Focused particle beam nano-machining: the next evolution step towards simulation aided process prediction

International Nuclear Information System (INIS)

Plank, Harald

2015-01-01

During the last decade, focused ion beam processing has been developed from traditionally used Ga + liquid ion sources towards higher resolution gas field ion sources (He + and Ne + ). Process simulations not only improve the fundamental understanding of the relevant ion–matter interactions, but also enable a certain predictive power to accelerate advances. The historic ‘gold’ standard in ion–solid simulations is the SRIM/TRIM Monte Carlo package released by Ziegler, Ziegler and Biersack 2010 Nucl. Instrum. Methods B 268 1818–23. While SRIM/TRIM is very useful for a myriad of applications, it is not applicable for the understanding of the nanoscale evolution associated with ion beam nano-machining as the substrate does not evolve with the sputtering process. As a solution for this problem, a new, adapted simulation code is briefly overviewed and finally addresses these contributions. By that, experimentally observed Ne + beam sputter profiles can be explained from a fundamental point of view. Due to their very good agreement, these simulations contain the potential for computer aided optimization towards predictable sputter processes for different nanotechnology applications. With these benefits in mind, the discussed simulation approach represents an enormous step towards a computer based master tool for adaptable ion beam applications in the context of industrial applications. (viewpoint)

Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

Energy Technology Data Exchange (ETDEWEB)

Lautenschläger, T. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Feder, R., E-mail: thomas.lautenschlaeger@iom-leipzig.de [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Neumann, H. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Rice, C.; Schubert, M. [Department of Electrical and Computer Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511 (United States); Bundesmann, C. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany)

2016-10-15

Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Angular and energy distribution of secondary particles. • Interaction between incorporated and impinging process gas. • Measured data compared with simulations. - Abstract: In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E{sup −n}, which is in principle in accordance with Thompson’s theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the high-energetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to

Nanopatterning of swinging substrates by ion-beam sputtering

Energy Technology Data Exchange (ETDEWEB)

Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr [Department of Physics, Sookmyung Women' s University, Seoul 140-742 (Korea, Republic of)

2016-05-28

Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

Nanopatterning of swinging substrates by ion-beam sputtering

International Nuclear Information System (INIS)

Yoon, Sun Mi; Kim, J.-S.

2016-01-01

Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

Variables affecting simulated Be sputtering yields

Energy Technology Data Exchange (ETDEWEB)

Björkas, C., E-mail: carolina.bjorkas@helsinki.fi; Nordlund, K.

2013-08-15

Since beryllium is a strong candidate for the main plasma-facing material in future fusion reactors, its sputtering behaviour plays an important role in predicting the reactor’s life-time. Consensus about the actual sputtering yields has not yet been achieved, as observations are influenced by experimental method and/or studied sample. In this work, the beryllium sputtering due to deuterium and beryllium self-bombardment is analyzed using molecular dynamics simulations. The main methodological aspects that influence the outcome, such as flux and fluence of the bombardment, are highlighted, and it is shown that the simulated yields also depend on the sample structure and deuterium content.

Ion beam sputter implantation method

International Nuclear Information System (INIS)

King, W.J.

1978-01-01

By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO 2 , Al 2 O 3 , Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW) [de

MD simulation of cluster formation during sputtering

International Nuclear Information System (INIS)

Muramoto, T.; Okai, M.; Yamashita, Y.; Yorizane, K.; Yamamura, Y.

2001-01-01

The cluster ejection due to cluster impact on a solid surface is studied through molecular dynamics (MD) simulations. Simulations are performed for Cu cluster impacts on the Cu(1 1 1) surface for cluster energy 100 eV/atom, and for clusters of 6, 13, 28 and 55 atoms. Interatomic interactions are described by the AMLJ-EAM potential. The vibration energy spectrum is independent of the incident cluster size and energy. This comes from the fact that sputtered clusters become stable through the successive fragmentation of nascent large sputtered clusters. The vibration energy spectra for large sputtered clusters have a peak, whose energy corresponds to the melting temperature of Cu. The exponent of the power-law fit of the abundance distribution and the total sputtering yield for the cluster impacts are higher than that for the monatomic ion impacts with the same total energy, where the exponent δ is given by Y n ∝n δ and Y n is the yield of sputtered n-atom cluster. The exponent δ follows a unified function of the total sputtering yield, which is a monotonic increase function, and it is nearly equal to δ ∼ -3 for larger yield

Simulation and beam line experiments for the superconducting ECR ion source VENUS

International Nuclear Information System (INIS)

Todd, Damon S.; Leitner, Daniela; Grote, David P.; Lyneis, ClaudeM.

2007-01-01

The particle-in-cell code Warp has been enhanced to incorporate both two- and three-dimensional sheath extraction models giving Warp the capability of simulating entire ion beam transport systems including the extraction of beams from plasma sources. In this article we describe a method of producing initial ion distributions for plasma extraction simulations in electron cyclotron resonance (ECR) ion sources based on experimentally measured sputtering on the source biased disc. Using this initialization method, we present preliminary results for extraction and transport simulations of an oxygen beam and compare them with experimental beam imaging on a quartz viewing plate for the superconducting ECR ion source VENUS

Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

Directory of Open Access Journals (Sweden)

Bogdanov R.V.

2015-03-01

Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

Computer simulation of the self-sputtering of uranium

International Nuclear Information System (INIS)

Robinson, M.T.

1983-01-01

The sputtering of polycrystalline α-uranium by uranium ions of energies below 10 keV has been studied in the binary collision approximation using the computer simulation program marlowe. Satisfactory agreement of the computed sputtering yields with the small amount of available experimental data was achieved using the Moliere interatomic potential, a semilocal inelastic loss function, and a planar surface binding barrier, all with conventional parameters. The model is used to discuss low energy sputtering processes and the energy and angular distributions of the reflected primaries and the sputtered target particles

Surfactant Sputtering: Theory of a new method of surface nanostructuring by ion beams

International Nuclear Information System (INIS)

Kree, R.; Yasseri, T.; Hartmann, A.K.

2009-01-01

We present a new Monte Carlo model and a new continuum theory of surface pattern formation due to 'surfactant sputtering', i.e. erosion by ion beam sputtering including a submonolayer coverage of additional, co-sputtered surfactant atoms. This setup, which has been realized in recent experiments in a controlled way leads to a number of interesting possibilities to modify pattern forming processing conditions. We will present three simple scenarios, which illustrate some potential applications of the method. In all three cases, simple Bradley-Harper type ripples appear in the absence of surfactant, whereas new, interesting structures emerge during surfactant sputtering.

Differential ion beam sputtering of segregated phases in aluminum casting alloys

International Nuclear Information System (INIS)

Nguyen, Chuong L.; Wirtz, Tom; Fleming, Yves; Metson, James B.

2013-01-01

Highlights: ► Novel combination of SIMS and SPM for accurate 3D chemical mapping. ► Different removal rates of metallurgical phases by ion beam. ► Faster oxidation rate of silicon vs. aluminum at room temperature in vacuum. - Abstract: Differential sputtering of materials is an important phenomenon in materials science with many implications. One of the practical applications of this phenomenon is the modification of the interface between a substrate and coating during sputter coating of materials. Aluminum casting alloys, as common materials in many applications, are suitable candidates to investigate this phenomenon due to their phase separated microstructures. Changes at the sample surface under ion bombardment can be characterized by a range of complimentary techniques. The novel SIMS–SPM instrument used here enables a thorough investigation into the evolution of topography and composition caused by ion beam sputtering. For the alloy examined in this work, the aluminum regions are removed faster than the silicon particles. The faster oxidation rate of silicon compared to aluminum in the exposed surface can also be deduced from this study.

Sputtering of silicon and glass substrates with polyatomic molecular ion beams generated from ionic liquids

Energy Technology Data Exchange (ETDEWEB)

Takeuchi, Mitsuaki, E-mail: m-takeuchi@kuee.kyoto-u.ac.jp; Hoshide, Yuki; Ryuto, Hiromichi; Takaoka, Gikan H. [Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)

2016-03-15

The effect of irradiating 1-ethyl-3-methylimidazolium positive (EMIM{sup +}) or dicyanamide negative (DCA{sup –}) ion beams using an ionic liquid ion source was characterized concerning its sputtering properties for single crystalline Si(100) and nonalkaline borosilicate glass substrates. The irradiation of the DCA{sup –} ion beam onto the Si substrate at an acceleration voltage of 4 and 6 kV exhibited detectable sputtered depths greater than a couple of nanometers with an ion fluence of only 1 × 10{sup 15} ions/cm{sup 2}, while the EMIM{sup +} ion beam produced the same depths with an ion fluence 5 × 10{sup 15} ions/cm{sup 2}. The irradiation of a 4 kV DCA{sup –} ion beam at a fluence of 1 × 10{sup 16} ions/cm{sup 2} also yields large etching depths in Si substrates, corresponding to a sputtering yield of Si/DCA{sup – }= 10, and exhibits a smoothed surface roughness of 0.05 nm. The interaction between DCA{sup –} and Si likely causes a chemical reaction that relates to the high sputtering yield and forms an amorphous C-N capping layer that results in the smooth surface. Moreover, sputtering damage by the DCA{sup –} irradiation, which was estimated by Rutherford backscattering spectroscopy with the channeling technique, was minimal compared to Ar{sup +} irradiation at the same condition. In contrast, the glass substrates exhibited no apparent change in surface roughnesses when sputtered by the DCA{sup –} irradiation compared to the unirradiated glass substrates.

Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

Energy Technology Data Exchange (ETDEWEB)

Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; Keudell, Achim von [RD Plasmas with Complex Interactions, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum (Germany)

2013-10-15

A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP)

Kinetic Monte Carlo simulations compared with continuum models and experimental properties of pattern formation during ion beam sputtering

International Nuclear Information System (INIS)

Chason, E; Chan, W L

2009-01-01

Kinetic Monte Carlo simulations model the evolution of surfaces during low energy ion bombardment using atomic level mechanisms of defect formation, recombination and surface diffusion. Because the individual kinetic processes are completely determined, the resulting morphological evolution can be directly compared with continuum models based on the same mechanisms. We present results of simulations based on a curvature-dependent sputtering mechanism and diffusion of mobile surface defects. The results are compared with a continuum linear instability model based on the same physical processes. The model predictions are found to be in good agreement with the simulations for predicting the early-stage morphological evolution and the dependence on processing parameters such as the flux and temperature. This confirms that the continuum model provides a reasonable approximation of the surface evolution from multiple interacting surface defects using this model of sputtering. However, comparison with experiments indicates that there are many features of the surface evolution that do not agree with the continuum model or simulations, suggesting that additional mechanisms are required to explain the observed behavior.

Ion beam and dual ion beam sputter deposition of tantalum oxide films

Science.gov (United States)

Cevro, Mirza; Carter, George

1994-11-01

Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

Science.gov (United States)

Cevro, Mirza; Carter, George

1995-02-01

Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

International Nuclear Information System (INIS)

Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

2015-01-01

Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

Characterization of copper thin films prepared by metal self-ion beam sputter deposition

International Nuclear Information System (INIS)

Gotoh, Yasuhito; Amioka, Takao; Tsuji, Hiroshi; Ishikawa, Junzo

1994-01-01

New deposition technique, 'metal-ion beam self-sputtering' method has been developed. Using metal ions which is the same element with the target material, no contamination with noble gas atoms, which are often used in the conventional sputtering, will occur. In this paper, fundamental measurement of the film purity is reported. As a result of PIXE measurements, it was clarified that only slight amount of iron is incorporated in the films. (author)

Simple model of surface roughness for binary collision sputtering simulations

Energy Technology Data Exchange (ETDEWEB)

Lindsey, Sloan J. [Institute of Solid-State Electronics, TU Wien, Floragasse 7, A-1040 Wien (Austria); Hobler, Gerhard, E-mail: gerhard.hobler@tuwien.ac.at [Institute of Solid-State Electronics, TU Wien, Floragasse 7, A-1040 Wien (Austria); Maciążek, Dawid; Postawa, Zbigniew [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30348 Kraków (Poland)

2017-02-15

Highlights: • A simple model of surface roughness is proposed. • Its key feature is a linearly varying target density at the surface. • The model can be used in 1D/2D/3D Monte Carlo binary collision simulations. • The model fits well experimental glancing incidence sputtering yield data. - Abstract: It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the “density gradient model”) which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.

Simple model of surface roughness for binary collision sputtering simulations

International Nuclear Information System (INIS)

Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

2017-01-01

Highlights: • A simple model of surface roughness is proposed. • Its key feature is a linearly varying target density at the surface. • The model can be used in 1D/2D/3D Monte Carlo binary collision simulations. • The model fits well experimental glancing incidence sputtering yield data. - Abstract: It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the “density gradient model”) which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.

Study on the Deposition Rate Depending on Substrate Position by Using Ion Beam Sputtering Deposition

Energy Technology Data Exchange (ETDEWEB)

Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2014-05-15

Ion beams have been used for over thirty years to modify materials in manufacturing of integrated circuits, and improving the corrosion properties of surfaces. Recently, the requirements for ion beam processes are becoming especially challenging in the following areas : ultra shallow junction formation for LSI fabrication, low damage high rate ion beam sputtering and smoothing, high quality functional surface treatment for electrical and optical properties. Ion beam sputtering is an attractive technology for the deposition of thin film coatings onto a broad variety of polymer, Si-wafer, lightweight substrates. Demand for the decoration metal is increasing. In addition, lightweight of parts is important, because of energy issues in the industries. Although a lot of researches have been done with conventional PVD methods for the deposition of metal or ceramic films on the surface of the polymer, there are still adhesion problems.

Technology and applications of broad-beam ion sources used in sputtering. Part II. Applications

International Nuclear Information System (INIS)

Harper, J.M.E.; Cuomo, J.J.; Kaufman, H.R.

1982-01-01

The developments in broad-beam ion source technology described in the companion paper (Part I) have stimulated a rapid expansion in applications to materials processing. These applications are reviewed here, beginning with a summary of sputtering mechanisms. Next, etching applications are described, including microfabrication and reactive ion beam etching. The developing area of surface layer applications is summarized, and related to the existing fields of oxidation and implantation. Next, deposition applications are reviewed, including ion-beam sputter deposition and the emerging technique of ion-assisted vapor deposition. Many of these applications have been stimulated by the development of high current ion sources operating in the energy range of tens of hundreds of eV. It is in this energy range that ion-activated chemical etching is efficient, self-limiting compound layers can be grown, and the physical properties of vapor-deposited films can be modified. In each of these areas, broad ion beam technology provides a link between other large area plasma processes and surface analytical techniques using ion beams

Superconducting oxide thin films by ion beam sputtering

International Nuclear Information System (INIS)

Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

1987-01-01

Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

Science.gov (United States)

Coutts, T. J.

1987-01-01

This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

Growth and surface morphology of ion-beam sputtered Ti-Ni thin films

International Nuclear Information System (INIS)

Rao, Ambati Pulla; Sunandana, C.S.

2008-01-01

Titanium-nickel thin films have been deposited on float glass substrates by ion beam sputtering in 100% pure argon atmosphere. Sputtering is predominant at energy region of incident ions, 1000 eV to 100 keV. The as-deposited films were investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). In this paper we attempted to study the surface morphology and elemental composition through AFM and XPS, respectively. Core level as well as valence band spectra of ion-beam sputtered Ti-Ni thin films at various Ar gas rates (5, 7 and 12 sccm) show that the thin film deposited at 3 sccm possess two distinct peaks at binding energies 458.55 eV and 464.36 eV mainly due to TiO 2 . Upon increasing Ar rate oxidation of Ti-Ni is reduced and the Ti-2p peaks begin approaching those of pure elemental Ti. Here Ti-2p peaks are observed at binding energy positions of 454.7 eV and 460.5 eV. AFM results show that the average grain size and roughness decrease, upon increasing Ar gas rate, from 2.90 μm to 0.096 μm and from 16.285 nm to 1.169 nm, respectively

Nanofabrication by ion-beam sputtering fundamentals and applications

CERN Document Server

Som, Tapobrata

2012-01-01

Considerable attention has been paid to ion beam sputtering as an effective way to fabricate self-organized nano-patterns on various substrates. The significance of this method for patterning surfaces is that the technique is fast, simple, and less expensive. The possibility to create patterns on very large areas at once makes it even more attractive. This book reviews various fascinating results, understand the underlying physics of ion induced pattern formation, to highlight the potential applications of the patterned surfaces, and to explore the patterning behavior by different irradiation

Orientation-dependent ion beam sputtering at normal incidence conditions in FeSiAl alloy

International Nuclear Information System (INIS)

Batic, Barbara Setina; Jenko, Monika

2010-01-01

The authors have performed Ar+ broad ion beam sputtering of a polycrystalline Fe-Si-Al alloy at normal incidence at energies varying from 6 to 10 keV. Sputtering results in the formation of etch pits, which can be classified in three shapes: triangular, rectangular, and square. As each grain of individual orientation exhibits a certain type of pattern, the etch pits were correlated with the crystal orientations by electron backscattered diffraction technique.

Simple model of surface roughness for binary collision sputtering simulations

Science.gov (United States)

Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

2017-02-01

It has been shown that surface roughness can strongly influence the sputtering yield - especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the "density gradient model") which imitates surface roughness effects. In the model, the target's atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient - leading to increased sputtering yields, similar in effect to surface roughness.

Multilayered nanostructured coverings generated by a method of ion beam sputtering in vacuum

International Nuclear Information System (INIS)

Il'yushenko, A.F.; Andreev, M.A.; Markova, L.V.; Lisovskaya, Yu. O.

2013-01-01

Technological process of the formation of multilayered coverings by ion -beam sputtering is developed. At research of samples by method of AFM it is established, that the heating of a substrate leads to formation of rather large grains up to 100 nanometers in size, consisting of dispersed subgrains in the size 10-25 nanometers. The obtained results allow to say that in the course of formation of coverings interphase borders of section in one layer and section border between coat layers are formed. The use of a method of Electron Backscatter Diffraction Analysis (EBSD) has helped to confirm that the at ion-beam sputtering, ultrafine diamonds remain their diamond-like structure when migrating to the surface of the coating. It is found that with increasing number of monolayers coating microhardness increases. However, this relationship is described by a nonlinear and exponential model. (authors)

Impurity Dynamics under Neutral Beam Injection at TJ-II (simulation)

International Nuclear Information System (INIS)

Guasp, J.; Fuentes, C.; Liniers, M.

2001-01-01

In this study the simulations of plasma transport under NBI for TJ-II, previously performed, are extended. Since than a considerable number of important modifications have been introduced in the model: change of magnetic configuration, use of experimental initial profiles, expansion of the Data base from NBI calculations and, mainly, a detailed handling of impurities with inclusion of sputtering effects. Moreover there is now a particular emphasis on the analysis of the conditions for discharge collapse and on the possible effects of single beam injection. This analysis of impurity behaviour with sputtering shows that in the expected usual cases there is no radioactive collapse and that if the recycling coefficients remain lower the unity it is always possible to find a strategy for external gas puffing leading to a stationary state, with densities below the limit and efficient NBI absorption (>50%). The radioactive collapse can appear either at high densities (central value higher than 1.4x10''20 m''3), excessive influx of impurities (i. e. with sputtering rates higher than twice the expected values) o for insufficient injected beam power (less than 45 kW). The present study analyses only the 100 4 4 6 4 configuration of TJ-II, but future works will start a systematic scan of configuration using this same model. (Author) 12 Refs

Gold removal rate by ion sputtering as a function of ion-beam voltage and raster size using Auger electron spectroscopy. Final report

International Nuclear Information System (INIS)

Boehning, C.W.

1983-01-01

Gold removal rate was measured as a function of ion beam voltage and raster size using Auger electron spectroscopy (AES). Three different gold thicknesses were developed as standards. Two sputter rate calibration curves were generated by which gold sputter rate could be determined for variations in ion beam voltage or raster size

Study on low-energy sputtering near the threshold energy by molecular dynamics simulations

Directory of Open Access Journals (Sweden)

C. Yan

2012-09-01

Full Text Available Using molecular dynamics simulation, we have studied the low-energy sputtering at the energies near the sputtering threshold. Different projectile-target combinations of noble metal atoms (Cu, Ag, Au, Ni, Pd, and Pt are simulated in the range of incident energy from 0.1 to 200 eV. It is found that the threshold energies for sputtering are different for the cases of M1 < M2 and M1 ≥ M2, where M1 and M2 are atomic mass of projectile and target atoms, respectively. The sputtering yields are found to have a linear dependence on the reduced incident energy, but the dependence behaviors are different for the both cases. The two new formulas are suggested to describe the energy dependences of the both cases by fitting the simulation results with the determined threshold energies. With the study on the energy dependences of sticking probabilities and traces of the projectiles and recoils, we propose two different mechanisms to describe the sputtering behavior of low-energy atoms near the threshold energy for the cases of M1 < M2 and M1 ≥ M2, respectively.

Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

Science.gov (United States)

Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

2018-03-01

The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

Science.gov (United States)

Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

2014-12-01

Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

Sputtering of Lunar Regolith Simulant by Protons and Multicharged Heavy Ions at Solar Wind Energies

International Nuclear Information System (INIS)

Meyer, Fred W.; Harris, Peter R.; Taylor, C.N.; Meyer, Harry M. III; Barghouty, N.; Adams, J. Jr.

2011-01-01

We report preliminary results on sputtering of a lunar regolith simulant at room temperature by singly and multiply charged solar wind ions using quadrupole and time-of-flight (TOF) mass spectrometry approaches. Sputtering of the lunar regolith by solar-wind heavy ions may be an important particle source that contributes to the composition of the lunar exosphere, and is a possible mechanism for lunar surface ageing and compositional modification. The measurements were performed in order to assess the relative sputtering efficiency of protons, which are the dominant constituent of the solar wind, and less abundant heavier multicharged solar wind constituents, which have higher physical sputtering yields than same-velocity protons, and whose sputtering yields may be further enhanced due to potential sputtering. Two different target preparation approaches using JSC-1A AGGL lunar regolith simulant are described and compared using SEM and XPS surface analysis.

Molecular dynamics simulations with electronic stopping can reproduce experimental sputtering yields of metals impacted by large cluster ions

Science.gov (United States)

Tian, Jiting; Zhou, Wei; Feng, Qijie; Zheng, Jian

2018-03-01

An unsolved problem in research of sputtering from metals induced by energetic large cluster ions is that molecular dynamics (MD) simulations often produce sputtering yields much higher than experimental results. Different from the previous simulations considering only elastic atomic interactions (nuclear stopping), here we incorporate inelastic electrons-atoms interactions (electronic stopping, ES) into MD simulations using a friction model. In this way we have simulated continuous 45° impacts of 10-20 keV C60 on a Ag(111) surface, and found that the calculated sputtering yields can be very close to the experimental results when the model parameter is appropriately assigned. Conversely, when we ignore the effect of ES, the yields are much higher, just like the previous studies. We further expand our research to the sputtering of Au induced by continuous keV C60 or Ar100 bombardments, and obtain quite similar results. Our study indicates that the gap between the experimental and the simulated sputtering yields is probably induced by the ignorance of ES in the simulations, and that a careful treatment of this issue is important for simulations of cluster-ion-induced sputtering, especially for those aiming to compare with experiments.

A flexible platform for simulations of sputtering hollow cathode discharges for laser applications

NARCIS (Netherlands)

Mihailova, D.B.; Grozeva, M.; Hagelaar, G.J.M.; Dijk, van J.; Brok, W.J.M.; Mullen, van der J.J.A.M.

2008-01-01

The Plasimo modelling platform, extended with a cathode wall sputtering module is used to study the discharge processes and to optimise the design parameters of a sputtering hollow cathode discharge (HCD). We present Plasimo simulations of a HCD used for laser applications. A time dependent

Monocrystal sputtering by the computer simulation code ACOCT

International Nuclear Information System (INIS)

Yamamura, Yasunori; Takeuchi, Wataru.

1987-09-01

A new computer code ACOCT has been developed in order to simulate the atomic collisions in the crystalline target within the binary collision approximation. The present code is more convenient as compared with the MARLOWE code, and takes the higher-order simultaneous collisions into account. To cheke the validity of the ACOCT program, we have calculated sputtering yields for various ion-target combinations and compared with the MARLOWE results. It is found that the calculated yields by the ACOCT program are in good agreements with those by the MARLOWE code. The ejection patterns of sputtered atoms were also calculated for the major surfaces of fcc, bcc, diamond and hcp structures, and we have got reasonable agreements with experimental results. In order to know the effects of the simultaneous collision in the slowing down process the sputtering yields and the projected ranges are calculated, changeing the parameter of the criterion for the simultaneous collision, and the effect of the simultaneous collision is found to depend on the crystal orientation. (author)

Non-imaging ray-tracing for sputtering simulation with apodization

Science.gov (United States)

Ou, Chung-Jen

2018-04-01

Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage.

Effects of ion sputtering on semiconductor surfaces

International Nuclear Information System (INIS)

McGuire, G.E.

1978-01-01

Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging

Energy Technology Data Exchange (ETDEWEB)

Ziani, A. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Centre National d’Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France); Delmotte, F., E-mail: Franck.Delmotte@InstitutOptique.fr [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Le Paven-Thivet, C. [Institut d' Electronique et de Télécommunications de Rennes (IETR) UMR-CNRS 6164, Université de Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex France (France); Meltchakov, E.; Jérome, A. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Roulliay, M. [Institut des Sciences Moléculaires d’Orsay UMR 8214, Univ Paris Sud, 91405 Orsay France (France); Bridou, F. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Gasc, K. [Centre National d’Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France)

2014-02-03

In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B{sub 4}C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source.

Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging

International Nuclear Information System (INIS)

Ziani, A.; Delmotte, F.; Le Paven-Thivet, C.; Meltchakov, E.; Jérome, A.; Roulliay, M.; Bridou, F.; Gasc, K.

2014-01-01

In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B 4 C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source

Dwell time dependent morphological transition and sputtering yield of ion sputtered Sn

International Nuclear Information System (INIS)

Qian, H X; Zeng, X R; Zhou, W

2010-01-01

Self-organized nano-scale patterns may appear on a wide variety of materials irradiated with an ion beam. Good manipulation of these structures is important for application in nanostructure fabrication. In this paper, dwell time has been demonstrated to be able to control the ripple formation and sputtering yield on Sn surface. Ripples with a wavelength of 1.7 μm were observed for a dwell time in the range 3-20 μs, whereas much finer ripples with a wavelength of 540 nm and a different orientation were observed for a shorter dwell time in the range 0.1-2 μs. The sputtering yield increases with dwell time significantly. The results provide a new basis for further steps in the theoretical description of morphology evolution during ion beam sputtering.

Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles

International Nuclear Information System (INIS)

Sekowski, M.; Burenkov, A.; Martinez-Limia, A.; Hernandez-Mangas, J.; Ryssel, H.

2008-01-01

Angular distributions of ion sputtered germanium and silicon atoms are investigated within this work. Experiments are performed for the case of grazing ion incidence angles, where the resulting angular distributions are asymmetrical with respect to the polar angle of the sputtered atoms. The performed experiments are compared to Monte-Carlo simulations from different programs. We show here an improved model for the angular distribution, which has an additional dependence of the ion incidence angle.

Statistical analysis of simulation calculation of sputtering for two interaction potentials

International Nuclear Information System (INIS)

Shao Qiyun

1992-01-01

The effects of the interaction potentials (Moliere potential and Universal potential) are presented on computer simulation results of sputtering via Monte Carlo simulation based on the binary collision approximation. By means of Wilcoxon two-Sample paired sign rank test, the statistically significant difference for the above results is obtained

Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

International Nuclear Information System (INIS)

Yang, Jie; Zhao, Bo; Wang, Chong; Qiu, Feng; Wang, Rongfei; Yang, Yu

2016-01-01

Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

Energy Technology Data Exchange (ETDEWEB)

Yang, Jie; Zhao, Bo [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Wang, Chong, E-mail: cwang@mail.sitp.ac.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Qiu, Feng; Wang, Rongfei [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Yang, Yu, E-mail: yuyang@ynu.edu.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China)

2016-11-15

Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

Tests of a new axial sputtering technique in an ECRIS

International Nuclear Information System (INIS)

Scott, R.; Pardo, R.; Vondrasek, R.

2012-01-01

Axial and radial sputtering techniques have been used over the years to create beams from an ECRIS at multiple accelerator facilities. Operational experience has shown greater beam production when using the radial sputtering method versus axial sputtering. At Argonne National Laboratory, previous work with radial sputtering has demonstrated that the position of the sputter sample relative to the plasma chamber wall influences sample drain current, beam production and charge state distribution. The possibility of the chamber wall acting as a ground plane which influences the sputtering of material has been considered, and an attempt has been made to mimic this possible ground plane effect with a coaxial sample introduced from the injection end. Results of these tests will be shown as well as comparisons of outputs using the two methods. The paper is followed by the associated poster. (authors)

Magnetic and structural properties of ion beam sputtered Fe–Zr–Nb–B–Cu thin films

International Nuclear Information System (INIS)

Modak, S.S.; Kane, S.N.; Gupta, A.; Mazaleyrat, F.; LoBue, M.; Coisson, M.; Celegato, F.; Tiberto, P.; Vinai, F.

2012-01-01

Magnetic and structural properties of Fe–Zr–Nb–B–Cu thin films, prepared by ion beam sputtering on silicon substrates by using a target made up of amorphous ribbons of nominal composition Fe 84 Zr 3.5 Nb 3.5 B 8 Cu 1 , are reported. As-deposited thin film samples exhibit an in-plane uniaxial anisotropy, which can be ascribed to the preparation technique and the coupling of quenched-in internal stresses. Structural measurements indicate no significant variation of the grain size with thickness and with the annealing temperature. Increase in surface irregularities with annealing temperature and oxidation results in aggregates that would act as pinning centers, affecting the magnetic properties leading to magnetic hardening of the specimens. The role of the magnetic anisotropy is thoroughly discussed with the help of magnetic and ferromagnetic resonance measurements. - Highlights: ►Ion beam sputtered Fe–Zr–Nb–B–Cu thin films of different thickness are prepared. ►Films exhibit in-plane uniaxial anisotropy, which reduces with thermal treatments. ►Increased surface roughness leads to wall pinning, increasing the coercive field.

Argonne inverted sputter source

International Nuclear Information System (INIS)

Yntema, J.L.; Billquist, P.J.

1983-01-01

The emittance of the inverted sputter source with immersion lenses was measured to be about 5π mm mrad MeV/sup 1/2/ at the 75% level over a wide range of beam intensities. The use of the source in experiments with radioactive sputter targets and hydrogen loaded targets is described. Self contamination of the source is discussed

Ion beam processing of surfaces and interfaces. Modeling and atomistic simulations

International Nuclear Information System (INIS)

Liedke, Bartosz

2011-01-01

Self-organization of regular surface pattern under ion beam erosion was described in detail by Navez in 1962. Several years later in 1986 Bradley and Harper (BH) published the first self-consistent theory on this phenomenon based on the competition of surface roughening described by Sigmund's sputter theory and surface smoothing by Mullins-Herring diffusion. Many papers that followed BH theory introduced other processes responsible for the surface patterning e.g. viscous flow, redeposition, phase separation, preferential sputtering, etc. The present understanding is still not sufficient to specify the dominant driving forces responsible for self-organization. 3D atomistic simulations can improve the understanding by reproducing the pattern formation with the detailed microscopic description of the driving forces. 2D simulations published so far can contribute to this understanding only partially. A novel program package for 3D atomistic simulations called TRIDER (TRansport of Ions in matter with DEfect Relaxation), which unifies full collision cascade simulation with atomistic relaxation processes, has been developed. The collision cascades are provided by simulations based on the Binary Collision Approximation, and the relaxation processes are simulated with the 3D lattice kinetic Monte-Carlo method. This allows, without any phenomenological model, a full 3D atomistic description on experimental spatiotemporal scales. Recently discussed new mechanisms of surface patterning like ballistic mass drift or the dependence of the local morphology on sputtering yield are inherently included in our atomistic approach. The atomistic 3D simulations do not depend so much on experimental assumptions like reported 2D simulations or continuum theories. The 3D computer experiments can even be considered as 'cleanest' possible experiments for checking continuum theories. This work aims mainly at the methodology of a novel atomistic approach, showing that: (i) In general

Ion beam processing of surfaces and interfaces. Modeling and atomistic simulations

Energy Technology Data Exchange (ETDEWEB)

Liedke, Bartosz

2011-03-24

Self-organization of regular surface pattern under ion beam erosion was described in detail by Navez in 1962. Several years later in 1986 Bradley and Harper (BH) published the first self-consistent theory on this phenomenon based on the competition of surface roughening described by Sigmund's sputter theory and surface smoothing by Mullins-Herring diffusion. Many papers that followed BH theory introduced other processes responsible for the surface patterning e.g. viscous flow, redeposition, phase separation, preferential sputtering, etc. The present understanding is still not sufficient to specify the dominant driving forces responsible for self-organization. 3D atomistic simulations can improve the understanding by reproducing the pattern formation with the detailed microscopic description of the driving forces. 2D simulations published so far can contribute to this understanding only partially. A novel program package for 3D atomistic simulations called TRIDER (TRansport of Ions in matter with DEfect Relaxation), which unifies full collision cascade simulation with atomistic relaxation processes, has been developed. The collision cascades are provided by simulations based on the Binary Collision Approximation, and the relaxation processes are simulated with the 3D lattice kinetic Monte-Carlo method. This allows, without any phenomenological model, a full 3D atomistic description on experimental spatiotemporal scales. Recently discussed new mechanisms of surface patterning like ballistic mass drift or the dependence of the local morphology on sputtering yield are inherently included in our atomistic approach. The atomistic 3D simulations do not depend so much on experimental assumptions like reported 2D simulations or continuum theories. The 3D computer experiments can even be considered as 'cleanest' possible experiments for checking continuum theories. This work aims mainly at the methodology of a novel atomistic approach, showing that: (i) In

Lead-silicate glass surface sputtered by an argon cluster ion beam investigated by XPS

Czech Academy of Sciences Publication Activity Database

Zemek, Josef; Jiříček, Petr; Houdková, Jana; Jurek, Karel; Gedeon, O.

2017-01-01

Roč. 469, Aug (2017), s. 1-6 ISSN 0022-3093 R&D Projects: GA MŠk LM2015088; GA ČR(CZ) GA15-12580S Institutional support: RVO:68378271 Keywords : lead-silicate glass * XPS * BO * NBO * Argon duster ion beam sputtering * X-ray irradiation Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.124, year: 2016

Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

International Nuclear Information System (INIS)

Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

2008-01-01

A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy

Development of ion beam sputtering technology for mold and die

International Nuclear Information System (INIS)

Lee, Jaehyung; Park, J.; Lee, J.; Jil, J.; Yang, D.; Noh, Y.; You, B.; You, J.

2003-06-01

Ion beam sputtering technique, one of the surface modification techniques, is to reduce surface roughness of materials with selective detaching atoms and micro particles from the surface by bombarding energetic ions of a few to a few tens keV onto the materials surfaces. This technique can be applied for the surfaces that need to have sub micrometer surface roughness, and it has already been used by companies and/or Institute over the world. Although this is relatively high cost process, it has been widely demanded in the industries with developing the eco-friend equipment due to its high quality of products. In the domestic industry, it has been pointed out that the mechanical polishing technique for molds and dies is relatively expensive and does not produce the required surface roughness. Therefore, in this R and D, techniques obtained from the ion source and the ion beam irradiation techniques developed for the proton accelerator has been applied to polish the surface of molds and dies to solve the above-mentioned problems that take place during mechanical polishing. In case that ion beam polishing technique is used, we expect not only producing the high quality polished surfaces but also producing the economically valuable end-products. In this R and D project, we are aiming at establishing ion beam techniques for industrialization as well as mass production of low cost products with developing the economical instrumentation techniques. Also, as a result of this R and D it is expected that importing of precise molds and dies may be reduced and technical competitiveness will be enhanced

Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

International Nuclear Information System (INIS)

Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

1998-01-01

Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

Czech Academy of Sciences Publication Activity Database

Horák, Pavel; Bejšovec, Václav; Vacík, Jiří; Lavrentiev, Vasyl; Vrňata, M.; Kormunda, M.; Daniš, S.

2016-01-01

Roč. 389, DEC (2016), s. 751-759 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : Copper oxide * ion beam sputtering * Van der Pauw * nuclear reaction analysis * gas sensing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.387, year: 2016

The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

International Nuclear Information System (INIS)

Lim, Jongmin; Lee, Chongmu

2006-01-01

The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

NUMERICAL SIMULATIONS OF SUPERNOVA DUST DESTRUCTION. I. CLOUD-CRUSHING AND POST-PROCESSED GRAIN SPUTTERING

International Nuclear Information System (INIS)

Silvia, Devin W.; Smith, Britton D.; Michael Shull, J.

2010-01-01

We investigate through hydrodynamic simulations the destruction of newly formed dust grains by sputtering in the reverse shocks of supernova (SN) remnants. Using an idealized setup of a planar shock impacting a dense, spherical clump, we implant a population of Lagrangian particles into the clump to represent a distribution of dust grains in size and composition. We then post-process the simulation output to calculate the grain sputtering for a variety of species and size distributions. We explore the parameter space appropriate for this problem by altering the overdensity of the ejecta clumps and the speed of the reverse shocks. Since radiative cooling could lower the temperature of the medium in which the dust is embedded and potentially protect the dust by slowing or halting grain sputtering, we study the effects of different cooling methods over the timescale of the simulations. In general, our results indicate that grains with radii less than 0.1 μm are sputtered to much smaller radii and often destroyed completely, while larger grains survive their interaction with the reverse shock. We also find that, for high ejecta densities, the percentage of dust that survives is strongly dependent on the relative velocity between the clump and the reverse shock, causing up to 50% more destruction for the highest velocity shocks. The fraction of dust destroyed varies widely across grain species, ranging from total destruction of Al 2 O 3 grains to minimal destruction of Fe grains (only 20% destruction in the most extreme cases). C and SiO 2 grains show moderate to strong sputtering as well, with 38% and 80% mass loss. The survival rate of grains formed by early SNe is crucial in determining whether or not they can act as the 'dust factories' needed to explain high-redshift dust.

Low temperature mechanical dissipation of an ion-beam sputtered silica film

International Nuclear Information System (INIS)

Martin, I W; Craig, K; Bassiri, R; Hough, J; Robie, R; Rowan, S; Nawrodt, R; Schwarz, C; Harry, G; Penn, S; Reid, S

2014-01-01

Thermal noise arising from mechanical dissipation in oxide mirror coatings is an important limit to the sensitivity of future gravitational wave detectors, optical atomic clocks and other precision measurement systems. Here, we present measurements of the temperature dependence of the mechanical dissipation of an ion-beam sputtered silica film between 10 and 300 K. A dissipation peak was observed at 20 K and the low temperature dissipation was found to have significantly different characteristics than observed for bulk silica and silica films deposited by alternative techniques. These results are important for better understanding the underlying mechanisms of mechanical dissipation, and thus thermal noise, in the most commonly-used reflective coatings for precision measurements. (paper)

Titanium carbide coatings on molybdenum by means of reactive sputtering and electron beam techniques

International Nuclear Information System (INIS)

Obata, T.; Aida, H.; Hirohata, Y.; Mohri, M.; Yamashina, T.

1982-01-01

This study is an experimental investigation of TiC coatings on Mo substrate by means of a reactive r.f. sputtering in the presence of CH 4 and a chemical reaction with interdiffusion in the sandwich structure of Ti/C/Mo by electron beam evaporation and heating. Using the reactive sputtering method, a homogeneous TiC coating with stoichiometric composition and good adhesion could be produced in the conditions of the partial pressure range of CH 4 , 2 approx. equal to 5 x 10 -4 Torr (total pressure, Psub(Ar) + Psub(CH) 4 = 5.6 x 10 -2 Torr) at 300 0 C (substrate). By using the electron beams, successively evaporated carbon and Ti on a Mo substrate was heated to 700 0 C to form a TiC surface layer on the top which then remained stable during further heating to 1000 0 C. Godd adhesion was brought about by interdiffusion to produce Mo 2 C layer between TiC layer and Mo substrate. It was also found that further heating of the coating layers subsequent to Ti evaporation on the TiC layer produced thicker TiC layer due to a chemical reaction between Ti and inner carbon layers. This could be a promising method of in situ replenishment for TiC coatings on the first wall and the limiter materials. (orig.)

Specific features of fullerene-bearing thin film growth using ion beam vacuum sputtering of fullerene mixtures with B, Fe, Se, Gd and Na

International Nuclear Information System (INIS)

Semenov, A.P.; Semenova, I.A.; Bulina, N.V.; Lopatin, V.A.; Karmanov, N.S.; Churilov, G.N.

2005-01-01

A new approach to the growth of films containing fullerenes and doping elements is described. It is suggested that a cluster mechanism of the target sputtering by accelerated ions makes possible the deposition of fullerenes on a substrate with a certain probability for dopant atoms being introduced into the cavities of fullerene molecules and a higher probability of the doping element introduction between fullerene molecules. The proposed method has been experimentally implemented by using an Ar ion beam to sputter C 60 /C 70 fullerene mixtures, synthesized in a plasmachemical reactor at a pressure of 10 5 Pa and containing a doping element, i.e. Fe, Na, B, Gd or Se. Micron-thick films containing C 60 and C 70 fullerenes and the corresponding dopant element, i.e. Fe, Na, B, Gd or Se, were grown from dopant-containing fullerene mixtures by ion beam sputtering in a vacuum of ∼10 -2 Pa [ru

Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

Directory of Open Access Journals (Sweden)

C. G. Jin

2008-01-01

Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

Sputtering as a means of depth profiling

International Nuclear Information System (INIS)

Whitton, J.L.

1978-01-01

Probably the most common technique for determination of depth profiles by sputtering is that of secondary ion mass spectrometry. Many problems occur in the important step of converting the time (of sputtering) scale to a depth scale and these problems arise before the secondary ions are ejected. An attempt is made to present a comprehensive list of the effects that should be taken into consideration in the use of sputtering as a means of depth profiling. The various parameters liable to affect the depth profile measurements are listed in four sections: beam conditions; target conditions; experimental environment; and beam-target interactions. The effects are discussed and where interplay occurs, cross-reference is made and examples are provided where possible. (B.R.H.)

Laser sputter neutral mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

King, B.V.; Clarke, M.; Hu, H.; Betz [Newcastle Univ., NSW (Australia). Dept. of Physics

1993-12-31

Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

Laser sputter neutral mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

King, B V; Clarke, M; Hu, H; Betz, [Newcastle Univ., NSW (Australia). Dept. of Physics

1994-12-31

Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

Production of intensive negative lithium beam with caesium sputter-type ion source

Science.gov (United States)

Lobanov, Nikolai R.

2018-01-01

Compounds of lithium oxide, hydroxide and carbonate, mixed with silver, were prepared for use as a cathode in caesium-sputter ion source. The intention was to determine the procedure which would produce the highest intensity negative lithium beams over extended period and with maximum stability. The chemical composition and properties of the samples were analysed using mass-spectrometry, optical microscopy, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Analyses (EDX) and Raman spectroscopy. These analyses showed that the chemical transformations with components resulted from pressing, storage and bake out were qualitatively in agreement with expectations. Intensive negative lithium ion beams >1 μA were delivered using cathodes fabricated from materials with multicomponent chemical composition when the following conditions were met: (i) use of components with moderate enthalpy of formation; (ii) low moisture content at final stage of cathode production and (iii) small concentration of water molecules in hydrate phase in the cathode mixture.

Implementation of depolarization due to beam-beam effects in the beam-beam interaction simulation tool GUINEA-PIG++

Science.gov (United States)

Rimbault, C.; Le Meur, G.; Blampuy, F.; Bambade, P.; Schulte, D.

2009-12-01

Depolarization is a new feature in the beam-beam simulation tool GUINEA-PIG++ (GP++). The results of this simulation are studied and compared with another beam-beam simulation tool, CAIN, considering different beam parameters for the International Linear Collider (ILC) with a centre-of-mass energy of 500 GeV.

Simulation of Beam-Beam Background at CLIC

CERN Document Server

Sailer, Andre

2010-01-01

The dense beams used at CLIC to achieve a high luminosity will cause a large amount of background particles through beam-beam interactions. Generator level studies with GuineaPig and full detector simulation studies with an ILD based CLIC detector have been performed to evaluate the amount of beam-beam background hitting the vertex detector.

Simulation of Beam-Beam Background at CLIC

CERN Document Server

Sailer, A

2010-01-01

The dense beams used at CLIC to achieve a high luminosity will cause a large amount of background particles through beam-beam interactions. Generator level studies with GUINEAPIG and full detector simulation studies with an ILD based CLIC detector have been performed to evaluate the amount of beam-beam back- ground hitting the vertex detector.

Deuterium sputtering of Li and Li-O films

Science.gov (United States)

Nelson, Andrew; Buzi, Luxherta; Kaita, Robert; Koel, Bruce

2017-10-01

Lithium wall coatings have been shown to enhance the operational plasma performance of many fusion devices, including NSTX and other tokamaks, by reducing the global wall recycling coefficient. However, pure lithium surfaces are extremely difficult to maintain in experimental fusion devices due to both inevitable oxidation and codeposition from sputtering of hot plasma facing components. Sputtering of thin lithium and lithium oxide films on a molybdenum target by energetic deuterium ion bombardment was studied in laboratory experiments conducted in a surface science apparatus. A Colutron ion source was used to produce a monoenergetic, mass-selected ion beam. Measurements were made under ultrahigh vacuum conditions as a function of surface temperature (90-520 K) using x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD). Results are compared with computer simulations conducted on a temperature-dependent data-calibrated (TRIM) model.

Prototype inverted sputter source for negative heavy ions

International Nuclear Information System (INIS)

Minehara, Eisuke; Kobayashi, Chiaki; Kikuchi, Shiroh

1977-10-01

A sputter source from which negative heavy ion beam is extracted through a tungsten wire and disc ionizer was built and tested. An alkali metal surface ionization gun with the ionizer is described, and also performance of the surface ionization gun and of the sputter source for negative heavy ions using the gun is reported. The gun was tested for three alkali metals, i.e. sodium, potassium and cesium. Total potassium beam current of 1-2mA was obtained at entrance aperture of the magnet. Sputtering materials and gases for producing negative heavy ions are carbon, copper, aluminium, molybdenum, oxygen and air. With carbon and leakage air, the beam intensities analyzed are: 2-5μA (at Faraday cup) and 4.6-11μA (at exit slit) for C - , 3-5μA (at Faraday cup) and 6.8-11μA (at exit slit) for 2C - , and 11-15μA (at Faraday cup) and 25-34μA (at exit slit) for O - . Total beam current at the entrance aperture was 200-400μA. (auth.)

Molecular dynamic simulations of the sputtering of multilayer organic systems

CERN Document Server

Postawa, Z; Piaskowy, J; Krantzman, K; Winograd, N; Garrison, B J

2003-01-01

Sputtering of organic overlayers has been modeled using molecular dynamics computer simulations. The investigated systems are composed of benzene molecules condensed into one, two and three layers on an Ag left brace 1 1 1 right brace surface. The formed organic overlayers were bombarded with 4 keV Ar projectiles at normal incidence. The development of the collision cascade in the organic overlayer was investigated. The sputtering yield, mass, internal and kinetic energy distributions of ejected particles have been analyzed as a function of the thickness of the organic layer. The results show that all emission characteristics are sensitive to the variation of layer thickness. Although most of the ejected intact benzene molecules originate from the topmost layer, the emission of particles located initially in second and third layers is significant. The analysis indicates that the metallic substrate plays a dominant role in the ejection of intact organic molecules.

The influence of beam divergence on ion-beam induced surface patterns

International Nuclear Information System (INIS)

Kree, R.; Yasseri, T.; Hartmann, A.K.

2009-01-01

We present a continuum theory and a Monte Carlo model of self-organized surface pattern formation by ion-beam sputtering including effects of beam profiles. Recently, it has turned out that such secondary ion-beam parameters may have a strong influence on the types of emerging patterns. We first discuss several cases, for which beam profiles lead to random parameters in the theory of pattern formation. Subsequently we study the evolution of the averaged height profile in continuum theory and find that the typical Bradley-Harper scenario of dependence of ripple patterns on the angle of incidence can be changed qualitatively. Beam profiles are implemented in Monte Carlo simulations, where we find generic effects on pattern formation. Finally, we demonstrate that realistic beam profiles, taken from experiments, may lead to qualitative changes of surface patterns.

Sputtering yields of carbon based materials under high particle flux with low energy

Science.gov (United States)

Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

1995-04-01

A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 ˜ 7 × 10 20/m 2 s at 50 ˜ 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 ˜ 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam.

Sputtering yields of carbon based materials under high particle flux with low energy

International Nuclear Information System (INIS)

Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

1995-01-01

A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 similar 7x10 20 /m 2 s at 50 similar 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 similar 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam. ((orig.))

Ion beam texturing

Science.gov (United States)

Hudson, W. R.

1977-01-01

A microscopic surface texture was created by sputter-etching a surface while simultaneously sputter-depositing a lower sputter yield material onto the surface. A xenon ion-beam source was used to perform the texturing process on samples as large as 3-cm diameter. Textured surfaces have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, stainless steel, Au, and Ag. A number of texturing parameters are studied including the variation of texture with ion-beam powder, surface temperature, and the rate of texture growth with sputter etching time.

Simulation of the beam halo from the beam-beam interaction in LEP

International Nuclear Information System (INIS)

Chen, T.; Irwin, J.; Siemann, R.

1994-02-01

The luminosity lifetimes of e + e - colliders are often dominated by the halo produced by the beam-beam interaction. They have developed a simulation technique to model this halo using the flux across boundaries in amplitude space to decrease the CPU time by a factor of one-hundred or more over 'brute force' tracking. It allows simulation of density distributions and halos corresponding to realistic lifetimes. Reference 1 shows the agreement with brute force tracking in a number of cases and the importance of beam-beam resonances in determining the density distribution of large amplitudes. this research is now directed towards comparisons with operating colliders and studies of the combined effects of lattice and beam-beam nonlinearities. LEP offers an ideal opportunity for both, and in this paper they are presenting the first results of LEP simulations

Recent advancements in sputter-type heavy negative ion sources

International Nuclear Information System (INIS)

Alton, G.D.

1989-01-01

Significant advancement have been made in sputter-type negative ion sources which utilize direct surface ionization, or a plasma to form the positive ion beam used to effect sputtering of samples containing the material of interest. Typically, such sources can be used to generate usable beam intensities of a few μA to several mA from all chemically active elements, depending on the particular source and the electron affinity of the element in question. The presentation will include an introduction to the fundamental processes underlying negative ion formation by sputtering from a low work function surface and several sources will be described which reflect the progress made in this technology. 21 refs., 9 figs., 1 tab

Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

International Nuclear Information System (INIS)

Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

2004-01-01

Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

IMPACT simulation and the SNS linac beam

International Nuclear Information System (INIS)

Zhang, Y.; Qiang, J.

2008-01-01

Multi-particle tracking simulations for the SNS linac beam dynamics studies are performed with the IMPACT code. Beam measurement results are compared with the computer simulations, including beam longitudinal halo and beam losses in the superconducting linac, transverse beam Courant-Snyder parameters and the longitudinal beam emittance in the linac. In most cases, the simulations show good agreement with the measured results

Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

Energy Technology Data Exchange (ETDEWEB)

Huang, H.S., E-mail: 160184@mail.csc.com.tw [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chiu, C.H.; Hong, I.T.; Tung, H.C. [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chien, F.S.-S. [Department of Physics, Tunghai University, 1727, Sec. 4, Xitun Dist., Taiwan Boulevard, Taichung 407, Taiwan, ROC (China)

2013-09-15

Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes, which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.

Molecular dynamics simulation of gold cluster growth during sputter deposition

Energy Technology Data Exchange (ETDEWEB)

Abraham, J. W., E-mail: abraham@theo-physik.uni-kiel.de; Bonitz, M., E-mail: bonitz@theo-physik.uni-kiel.de [Institut für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, Leibnizstraße 15, D-24098 Kiel (Germany); Strunskus, T.; Faupel, F. [Institut für Materialwissenschaft, Lehrstuhl für Materialverbunde, Christian-Albrechts-Universität zu Kiel, Kaiserstraße 2, D-24143 Kiel (Germany)

2016-05-14

We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

Novel magnetic controlled plasma sputtering method

International Nuclear Information System (INIS)

Axelevich, A.; Rabinovich, E.; Golan, G.

1996-01-01

A novel method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of the Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described. It was demonstrated that using the MCPS method the ion beam intensity at the target is a result of the interaction of a homogeneous external magnetic field and the controlling magnetic fields. The MCPS method was therefore found to be beneficial for the production of pure stoichiometric thin solid films with high reproducibility. This method could be used for the production of compound thin films as well. (authors)

Sputtering calculations with the discrete ordinated method

International Nuclear Information System (INIS)

Hoffman, T.J.; Dodds, H.L. Jr.; Robinson, M.T.; Holmes, D.K.

1977-01-01

The purpose of this work is to investigate the applicability of the discrete ordinates (S/sub N/) method to light ion sputtering problems. In particular, the neutral particle discrete ordinates computer code, ANISN, was used to calculate sputtering yields. No modifications to this code were necessary to treat charged particle transport. However, a cross section processing code was written for the generation of multigroup cross sections; these cross sections include a modification to the total macroscopic cross section to account for electronic interactions and small-scattering-angle elastic interactions. The discrete ordinates approach enables calculation of the sputtering yield as functions of incident energy and angle and of many related quantities such as ion reflection coefficients, angular and energy distributions of sputtering particles, the behavior of beams penetrating thin foils, etc. The results of several sputtering problems as calculated with ANISN are presented

Low-damage high-throughput grazing-angle sputter deposition on graphene

Energy Technology Data Exchange (ETDEWEB)

Chen, C.-T.; Gajek, M.; Raoux, S. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Casu, E. A. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Politecnico di Torino, Turin 10129 (Italy)

2013-07-15

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

Low-damage high-throughput grazing-angle sputter deposition on graphene

International Nuclear Information System (INIS)

Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

2013-01-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications

Low-damage high-throughput grazing-angle sputter deposition on graphene

Science.gov (United States)

Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

2013-07-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

Simulation study of the beam-beam interaction at SPEAR

International Nuclear Information System (INIS)

Tennyson, J.

1980-01-01

A two dimensional simulation study of the beam-beam interaction at SPEAR indicates that quantum fluctuations affecting the horizontal betatron oscillation play a critical role in the vertical beam blowup

Quartz crystal microbalance-based system for high-sensitivity differential sputter yield measurements

International Nuclear Information System (INIS)

Rubin, B.; Topper, J. L.; Farnell, C. C.; Yalin, A. P.

2009-01-01

We present a quartz crystal microbalance-based system for high sensitivity differential sputter yield measurements of different target materials due to ion bombardment. The differential sputter yields can be integrated to find total yields. Possible ion beam conditions include ion energies in the range of 30-350 eV and incidence angles of 0 deg. - 70 deg. from normal. A four-grid ion optics system is used to achieve a collimated ion beam at low energy (<100 eV) and a two-grid ion optics is used for higher energies (up to 750 eV). A complementary weight loss approach is also used to measure total sputter yields. Validation experiments are presented that confirm high sensitivity and accuracy of sputter yield measurements.

Physics of ion sputtering

International Nuclear Information System (INIS)

Robinson, M.T.

1984-04-01

The ejection of atoms by the ion bombardment of solids is discussed in terms of linear collision cascade theory. A simple argument describes the energies of the ejecta, but elaborate models are required to obtain accurate sputtering yields and related quantities. These include transport theoretical models based on linearized Boltzmann equations, computer simulation models based on the binary collision approximation, and classical many-body dynamical models. The role of each kind of model is discussed. Several aspects of sputtering are illustrated by results from the simulation code MARLOWE. 20 references, 6 figures

Simulator for beam-based LHC collimator alignment

Science.gov (United States)

Valentino, Gianluca; Aßmann, Ralph; Redaelli, Stefano; Sammut, Nicholas

2014-02-01

In the CERN Large Hadron Collider, collimators need to be set up to form a multistage hierarchy to ensure efficient multiturn cleaning of halo particles. Automatic algorithms were introduced during the first run to reduce the beam time required for beam-based setup, improve the alignment accuracy, and reduce the risk of human errors. Simulating the alignment procedure would allow for off-line tests of alignment policies and algorithms. A simulator was developed based on a diffusion beam model to generate the characteristic beam loss signal spike and decay produced when a collimator jaw touches the beam, which is observed in a beam loss monitor (BLM). Empirical models derived from the available measurement data are used to simulate the steady-state beam loss and crosstalk between multiple BLMs. The simulator design is presented, together with simulation results and comparison to measurement data.

Comparison of the Al back contact deposited by sputtering, e-beam, or thermal evaporation for inverted perovskite solar cells

Science.gov (United States)

Wahl, Tina; Hanisch, Jonas; Ahlswede, Erik

2018-04-01

In this work, we present inverted perovskite solar cells with Al top electrodes, which were deposited by three different methods. Besides the widely used thermal evaporation of Al, we also used the industrially important high deposition rate processes sputtering and electron beam evaporation for aluminium electrodes and examined the influence of the deposition method on the solar cell performance. The current-voltage characteristics of as grown solar cells with sputtered and e-beam Al electrode show an s-shape due to damage done to the organic electronic transport layers (ETL) during Al deposition. It can be cured by a short annealing step at a moderate temperature so that fill factors  >60% and power conversion efficiencies of almost 12% with negligible hysteresis can be achieved. While solar cells with thermally evaporated Al electrode do not show an s-shape, they also exhibit a clear improvement after a short annealing step. In addition, we varied the thickness of the ETL consisting of a double layer ([6,6]-Phenyl-C61-butyric acid methyl ester and bathocuproine) and investigated the influence on the solar cell parameters for the three different Al deposition methods, which showed distinct dependencies on ETL thickness.

Simulation of the electric potential and plasma generation coupling in magnetron sputtering discharges

Science.gov (United States)

Trieschmann, Jan; Krueger, Dennis; Schmidt, Frederik; Brinkmann, Ralf Peter; Mussenbrock, Thomas

2016-09-01

Magnetron sputtering typically operated at low pressures below 1 Pa is a widely applied deposition technique. For both, high power impulse magnetron sputtering (HiPIMS) as well as direct current magnetron sputtering (dcMS) the phenomenon of rotating ionization zones (also referred to as spokes) has been observed. A distinct spatial profile of the electric potential has been associated with the latter, giving rise to low, mid, and high energy groups of ions observed at the substrate. The adherent question of which mechanism drives this process is still not fully understood. This query is approached using Monte Carlo simulations of the heavy particle (i.e., ions and neutrals) transport consistently coupled to a pre-specified electron density profile via the intrinsic electric field. The coupling between the plasma generation and the electric potential, which establishes correspondingly, is investigated. While the system is observed to strive towards quasi-neutrality, distinct mechanisms governing the shape of the electric potential profile are identified. This work is supported by the German Research Foundation (DFG) in the frame of the transregional collaborative research centre TRR 87.

Production of rare-earth atomic negative ion beams in a cesium-sputter-type negative ion source

International Nuclear Information System (INIS)

Davis, V.T.; Covington, A.M.; Duvvuri, S.S.; Kraus, R.G.; Emmons, E.D.; Kvale, T.J.; Thompson, J.S.

2007-01-01

The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps

Heavy particle transport in sputtering systems

Science.gov (United States)

Trieschmann, Jan

2015-09-01

This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

Study of Sb/SnO{sub 2} bi-layer films prepared by ion beam sputtering deposition technique

Energy Technology Data Exchange (ETDEWEB)

Wang, Chun-Min [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Chun-Chieh [Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan, ROC (China); Kuo, Jui-Chao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: jlh888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

2014-11-03

In the present work, bi-layer thin films of Sb/SnO{sub 2} were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO{sub 2} layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO{sub 2} bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10{sup −3} Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO{sub 2} structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases.

Nickel oxide films by thermal annealing of ion-beam-sputtered Ni: Structure and electro-optical properties

Czech Academy of Sciences Publication Activity Database

Horák, Pavel; Remeš, Zdeněk; Bejšovec, Václav; Vacík, Jiří; Daniš, S.; Kormunda, M.

2017-01-01

Roč. 640, č. 10 (2017), s. 52-59 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR(CZ) GA14-05053S; GA MŠk LM2015056 Institutional support: RVO:61389005 ; RVO:68378271 Keywords : NiO * ion beam sputtering * thermal annealing * nuclear analytical methods * optical properties Subject RIV: JK - Corrosion ; Surface Treatment of Materials; BM - Solid Matter Physics ; Magnetism (FZU-D) OBOR OECD: Coating and films; Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D) Impact factor: 1.879, year: 2016

XPS investigation of monatomic and cluster argon ion sputtering of tantalum pentoxide

Energy Technology Data Exchange (ETDEWEB)

Simpson, Robin, E-mail: r.simpson@surrey.ac.uk [The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey (United Kingdom); Thermo Scientific, East Grinstead (United Kingdom); White, Richard G. [Thermo Scientific, East Grinstead (United Kingdom); Watts, John F.; Baker, Mark A. [The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey (United Kingdom)

2017-05-31

Highlights: • Ion beam induced oxide reduction from monatomic and gas cluster ion beam exposure are compared. • Lower relative level of preferential sputtering is shown in gas cluster ion beam depth profiling. • A lack of “steady state” is observed in gas cluster ion beam depth profiles of tantalum pentoxide. • Possible mechanisms behind the observed results, including temperature effects are proposed. - Abstract: In recent years, gas cluster ion beams (GCIB) have become the cutting edge of ion beam technology to sputter etch organic materials in surface analysis. However, little is currently known on the ability of argon cluster ions (Ar{sub n}{sup +}) to etch metal oxides and other technologically important inorganic compounds and no depth profiles have previously been reported. In this work, XPS depth profiles through a certified (European standard BCR-261T) 30 nm thick Ta{sub 2}O{sub 5} layer grown on Ta foil using monatomic Ar{sup +} and Ar{sub 1000}{sup +} cluster ions have been performed at different incident energies. The preferential sputtering of oxygen induced using 6 keV Ar{sub 1000}{sup +} ions is lower relative to 3 keV and 500 eV Ar{sup +} ions. Ar{sup +} ions exhibit a steady state O/Ta ratio through the bulk oxide but Ar{sub 1000}{sup +} ions show a gradual decrease in the O/Ta ratio as a function of depth. The depth resolution and etch rate is substantially better for the monatomic beam compared to the cluster beam. Higher O concentrations are observed when the underlying Ta bulk metal is sputtered for the Ar{sub 1000}{sup +} profiles compared to the Ar{sup +} profiles.

Sputtering mechanisms of polycrystalline platinum by low energy ions

International Nuclear Information System (INIS)

Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

1999-01-01

The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 1.5-9 keV He + bombardment at the normal ion incidence are presented. It has been found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of the bombarding ion species and ion energy. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for He and Ar bombardments were performed. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Debasree; Ghose, Debabrata, E-mail: debabrata1.ghose@gmail.com

2016-11-01

Highlights: • GaAs (001) surfaces are sputtered by 1 keV Ar{sup +} at sample temperature of 450 °C. • Highly ordered defect-free ripples develop at near-normal incidence angles (θ ≈ 0–25{sup 0}). • Concurrent sample rotation does not alter the ripple orientation with respect to the ion beam. • At grazing incidence angles anisotropic structure is formed. • Concurrent sample rotation shows that the structure orientation depends on the beam direction. - Abstract: Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar{sup +} bombardment at target temperature of 450 °C for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.

Electron beam simulation applicators

International Nuclear Information System (INIS)

Purdy, J.A.

1983-01-01

A system for simulating electron beam treatment portals using low-temperature melting point alloy is described. Special frames having the same physical dimensions as the electron beam applicators used on the Varian Clinac 20 linear accelerator were designed and constructed

Ion beam sputter coatings for laser technology

Science.gov (United States)

Ristau, Detlev; Gross, Tobias

2005-09-01

The initial motivation for the development of Ion Beam Sputtering (IBS) processes was the need for optical coatings with extremely low optical scatter losses for laser gyros. Especially, backscattering of the gyro-mirrors couples the directional modes in the ring resonator leading to the lock in effect which limits the sensitivity of the gyro. Accordingly, the first patent on IBS was approved for an aircraft company (Litton) in 1978. In the course of the rapid development of the IBS-concept during the last two decades, an extremely high optical quality could be achieved for laser coatings in the VIS- and NIR-spectral region. For example, high reflecting coatings with total optical losses below 1 ppm were demonstrated for specific precision measurement applications with the Nd:YAG-laser operating at 1.064 μm. Even though the high quality level of IBS-coatings had been confirmed in many applications, the process has not found its way into the production environment of most optical companies. Major restrictions are the relatively low rate of the deposition process and the poor lateral homogeneity of the coatings, which are related to the output characteristics of the currently available ion sources. In the present contribution, the basic principles of IBS will be discussed in the context of the demands of modern laser technology. Besides selected examples for special applications of IBS, aspects will be presented for approaches towards rapid manufacturing of coatings and the production of rugate filters on the basis of IBS-techniques.

Ion-beam technologies

Energy Technology Data Exchange (ETDEWEB)

Fenske, G.R. [Argonne National Lab., IL (United States)

1993-01-01

This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

Formation and stability of sputtered clusters

International Nuclear Information System (INIS)

Andersen, H.H.

1989-01-01

Current theory for the formation of sputtered clusters states that either atoms are sputtered individually and aggregate after having left the surface or they are sputtered as complete clusters. There is no totally sharp boundary between the two interpretations, but experimental evidence is mainly thought to favour the latter model. Both theories demand a criterion for the stability of the clusters. In computer simulations of sputtering, the idea has been to use the same interaction potential as in the lattice computations to judge the stability. More qualitatively, simple geometrical shapes have also been looked for. It is found here, that evidence for 'magic numbers' and electron parity effects in clusters have existed in the sputtering literature for a long time, making more sophisticated stability criteria necessary. The breakdown of originally sputtered metastable clusters into stable clusters gives strong support to the 'sputtered as clusters' hypothesis. (author)

Sputtering induced surface composition changes in copper-palladium alloys

International Nuclear Information System (INIS)

Sundararaman, M.; Sharma, S.K.; Kumar, L.; Krishnan, R.

1981-01-01

It has been observed that, in general, surface composition is different from bulk composition in multicomponent materials as a result of ion beam sputtering. This compositional difference arises from factors like preferential sputtering, radiation induced concentration gradients and the knock-in effect. In the present work, changes in the surface composition of copper-palladium alloys, brought about by argon ion sputtering, have been studied using Auger electron spectroscopy. Argon ion energy has been varied from 500 eV to 5 keV. Enrichment of palladium has been observed in the sputter-altered layer. The palladium enrichment at the surface has been found to be higher for 500 eV argon ion sputtering compared with argon ion sputtering at higher energies. Above 500 eV, the surface composition has been observed to remain the same irrespective of the sputter ion energy for each alloy composition. The bulk composition ratio of palladium to copper has been found to be linearly related to the sputter altered surface composition ratio of palladium to copper. These results are discussed on the basis of recent theories of alloy sputtering. (orig.)

Impurity Dynamics under Neutral Beam Injection at TJ-II (simulation); Dinamica de Impurezas durante la Inyeccion de Haces Neutros en el TJ-II (simulacion)

Energy Technology Data Exchange (ETDEWEB)

Guasp, J.; Fuentes, C.; Liniers, M.

2001-07-01

In this study the simulations of plasma transport under NBI for TJ-II, previously performed, are extended. Since than a considerable number of important modifications have been introduced in the model: change of magnetic configuration, use of experimental initial profiles, expansion of the Data base from NBI calculations and, mainly, a detailed handling of impurities with inclusion of sputtering effects. Moreover there is now a particular emphasis on the analysis of the conditions for discharge collapse and on the possible effects of single beam injection. This analysis of impurity behaviour with sputtering shows that in the expected usual cases there is no radioactive collapse and that if the recycling coefficients remain lower the unity it is always possible to find a strategy for external gas puffing leading to a stationary state, with densities below the limit and efficient NBI absorption (>50%). The radioactive collapse can appear either at high densities (central value higher than 1.4x10''20 m''3), excessive influx of impurities (i. e. with sputtering rates higher than twice the expected values) o for insufficient injected beam power (less than 45 kW). The present study analyses only the 100{sub 4}4{sub 6}4 configuration of TJ-II, but future works will start a systematic scan of configuration using this same model. (Author) 12 Refs.

Beam-Beam Simulations with GUINEA-PIG

CERN Document Server

Schulte, Daniel

1998-01-01

While the bunches in a linear collider cross only once, due to their small size they experience a strong beam-beam effect. GUINEA-PIG is a code to simulate the impact of this effect on luminosity and back ground. A short overview of the program is given with examples of its application to the back ground strudies for TESLA, the top quark threshold scan and a possible luminosity monitor, as well as some results for CLIC.

Formation of large clusters during sputtering of silver

International Nuclear Information System (INIS)

Staudt, C.; Heinrich, R.; Wucher, A.

2000-01-01

We have studied the formation of polyatomic clusters during sputtering of metal surfaces by keV ion bombardment. Both positively charged (secondary cluster ions) and neutral clusters have been detected in a time-of-flight mass spectrometer under otherwise identical experimental conditions, the sputtered neutrals being post-ionized by single photon absorption using a pulsed 157 nm VUV laser beam. Due to the high achievable laser intensity, the photoionization of all clusters could be saturated, thus enabling a quantitative determination of the respective partial sputtering yields. We find that the relative yield distributions of sputtered clusters are strongly correlated with the total sputtering yield in a way that higher yields lead to higher abundances of large clusters. By using heavy projectile ions (Xe + ) in connection with bombarding energies up to 15 keV, we have been able to detect sputtered neutral silver clusters containing up to about 60 atoms. For cluster sizes above 40 atoms, doubly charged species are shown to be produced in the photoionization process with non-negligible efficiency. From a direct comparison of secondary neutral and ion yields, the ionization probability of sputtered clusters is determined as a function of the cluster size. It is demonstrated that even the largest silver clusters are still predominantly sputtered as neutrals

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

Science.gov (United States)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Alkali metal adsorbate sputtering by molecular impact

International Nuclear Information System (INIS)

Moran, J.P.; Wachman, H.Y.; Trilling, L.

1974-01-01

An exploratory study of the sputtering by a krypton molecular beam of rubidium adsorbed at low coverage on a tungsten substrate has been described in a previous paper. An extension of this work is reported now

Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

International Nuclear Information System (INIS)

Nagata, T.; Haemori, M.; Chikyow, T.

2009-01-01

The authors examined the use of focused Ar ion beam sputtering (FAIS) for combinatorial synthesis. A Langmuir probe revealed that the electron temperature and density for FAIS of metal film deposition was lower than that of other major combinatorial thin film growth techniques such as pulsed laser deposition. Combining FAIS with the combinatorial method allowed the compositional fraction of the Pt-Ru binary alloy to be systematically controlled. Pt-Ru alloy metal film grew epitaxially on ZnO substrates, and crystal structures changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram. The alloy film has a smooth surface, with the Ru phase, in particular, showing a clear step-and-terrace structure. The combination of FAIS and the combinatorial method has major potential for the fabrication of high quality composition-spread metal film.

Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

Energy Technology Data Exchange (ETDEWEB)

Nagata, T.; Haemori, M.; Chikyow, T. [Advanced Electric Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2009-05-15

The authors examined the use of focused Ar ion beam sputtering (FAIS) for combinatorial synthesis. A Langmuir probe revealed that the electron temperature and density for FAIS of metal film deposition was lower than that of other major combinatorial thin film growth techniques such as pulsed laser deposition. Combining FAIS with the combinatorial method allowed the compositional fraction of the Pt-Ru binary alloy to be systematically controlled. Pt-Ru alloy metal film grew epitaxially on ZnO substrates, and crystal structures changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram. The alloy film has a smooth surface, with the Ru phase, in particular, showing a clear step-and-terrace structure. The combination of FAIS and the combinatorial method has major potential for the fabrication of high quality composition-spread metal film.

Control of surface ripple amplitude in ion beam sputtered polycrystalline cobalt films

Energy Technology Data Exchange (ETDEWEB)

Colino, Jose M., E-mail: josemiguel.colino@uclm.es [Institute of Nanoscience, Nanotechnology and Molecular Materials, University of Castilla-La Mancha, Campus de la Fabrica de Armas, Toledo 45071 (Spain); Arranz, Miguel A. [Facultad de Ciencias Quimicas, University of Castilla-La Mancha, Ciudad Real 13071 (Spain)

2011-02-15

We have grown both polycrystalline and partially textured cobalt films by magnetron sputter deposition in the range of thickness (50-200 nm). Kinetic roughening of the growing film leads to a controlled rms surface roughness values (1-6 nm) increasing with the as-grown film thickness. Ion erosion of a low energy 1 keV Ar+ beam at glancing incidence (80{sup o}) on the cobalt film changes the surface morphology to a ripple pattern of nanometric wavelength. The wavelength evolution at relatively low fluency is strongly dependent on the initial surface topography (a wavelength selection mechanism hereby confirmed in polycrystalline rough surfaces and based on the shadowing instability). At sufficiently large fluency, the ripple wavelength steadily increases on a coarsening regime and does not recall the virgin surface morphology. Remarkably, the use of a rough virgin surface makes the ripple amplitude in the final pattern can be controllably increased without affecting the ripple wavelength.

Sputtering and mixing of supported nanoparticles

International Nuclear Information System (INIS)

Jiménez-Sáez, J.C.; Pérez-Martín, A.M.C.; Jiménez-Rodríguez, J.J.

2013-01-01

Sputtering and mixing of Co nanoparticles supported in Cu(0 0 1) under 1-keV argon bombardment are studied using molecular-dynamics simulations. Particles of different initial size have been considered. The cluster height decreases exponentially with increasing fluence. In nanoparticles, sputtering yield is significantly enhanced compared to bulk. In fact, the value of this magnitude depends on the cluster height. A theoretical model for sputtering is introduced with acceptable results compared to those obtained by simulation. Discrepancies happen mainly for very small particles. Mixing rate at the interface is quantified; and besides, the influence of border effects for clusters of different initial size is assessed. Mixing rate and border length–surface area ratio for the initial interface show a proportionality relation. The phenomenon of ion-induced burrowing of metallic nanoparticles is analysed

The effect of FR enhancement in reactive ion beam sputtered Bi, Gd, Al-substituted iron- garnets: Bi2O3 nanocomposite films

OpenAIRE

Berzhansky, V.; Shaposhnikov, A.; Karavainikov, A.; Prokopov, A.; Mikhailova, T.; Lukienko, I.; Kharchenko, Yu.; Miloslavskaya, O.; Kharchenko, N.

2012-01-01

The effect of considerable Faraday rotation (FR) and figure of merit (Q) enhancement in Bi, Gd, Al-substituted iron garnets: Bi2O3 nano-composite films produced by separate reactive ion beam sputtered Bi:YIG and Bi2O3 films was found. It reached threefold enhancement of the FR and twofold of the Q one on GGG substrates.

Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

Science.gov (United States)

Wang, C; Ke, S Y; Yang, J; Hu, W D; Qiu, F; Wang, R F; Yang, Y

2015-03-13

The dependence of the electronic properties of a single Ge/Si quantum dot (QD) grown by the ion-beam sputtering deposition technique on growth temperature and QD diameter is investigated by conductive atomic force microscopy (CAFM). The Si-Ge intermixing effect is demonstrated to be important for the current distribution of single QDs. The current staircase induced by the Coulomb blockade effect is observed at higher growth temperatures (>700 °C) due to the formation of an additional barrier between dislocated QDs and Si substrate for the resonant tunneling of holes. According to the proposed single-hole-tunneling model, the fact that the intermixing effect is observed to increase as the incoherent QD size decreases may explain the increase in the starting voltage of the current staircase and the decrease in the current step width.

Mitigation of numerical noise for beam loss simulations

CERN Document Server

Kesting, Frederik

2017-01-01

Numerical noise emerges in self-consistent simulations of charged particles, and its mitigation is investigated since the first numerical studies in plasma physics. In accelerator physics, recent studies find an artificial diffusion of the particle beam due to numerical noise in particle-in-cell tracking, which is of particular importance for high intensity machines with a long storage time, as the SIS100 at FAIR or in context of the LIU upgrade at CERN. In beam loss simulations for these projects artificial effects must be distinguished from physical beam loss. Therefore, it is important to relate artificial diffusion to artificial beam loss, and to choose simulation parameters such that physical beam loss is well resolved. As a practical tool, we therefore suggest a scaling law to find optimal simulation parameters for a given maximum percentage of acceptable artificial beam loss.

Sensitivity of ion-induced sputtering to the radial distribution of energy transfers: A molecular dynamics study

International Nuclear Information System (INIS)

Mookerjee, S.; Khan, S. A.; Roy, A.; Beuve, M.; Toulemonde, M.

2008-01-01

Using different models for the deposition of energy on the lattice and a classical molecular dynamics approach to the subsequent transport, we evaluate how the details of the energy deposition model influence sputtering yield from a Lennard-Jones target irradiated with a MeV/u ion beam. Two energy deposition models are considered: a uniform, instantaneous deposition into a cylinder of fixed radius around the projectile ion track, used in earlier molecular dynamics and fluid dynamics simulations of sputtering yields; and an energy deposition distributed in time and space based on the formalism developed in the thermal spike model. The dependence of the sputtering yield on the total energy deposited on the target atoms is very sensitive to the energy deposition model. To clarify the origin of this strong dependence, we explore the role of the radial expansion of the electronic system prior to the transfer of its energy to the lattice. The results imply that observables such as the sputtering yield may be used as signatures of the fast electron-lattice energy transfer in the electronic energy-loss regime, and indicate the need for more experimental and theoretical investigations of these processes

Setup for in situ X-ray diffraction studies of thin film growth by magnetron sputtering

CERN Document Server

Ellmer, K; Weiss, V; Rossner, H

2001-01-01

A novel method is described for the in situ-investigation of nucleation and growth of thin films during magnetron sputtering. Energy dispersive X-ray diffraction with synchrotron light is used for the structural analysis during film growth. An in situ-magnetron sputtering chamber was constructed and installed at a synchrotron radiation beam line with a bending magnet. The white synchrotron light (1-70 keV) passes the sputtering chamber through Kapton windows and hits one of the substrates on a four-fold sample holder. The diffracted beam, observed under a fixed diffraction angle between 3 deg. and 10 deg., is energy analyzed by a high purity Ge-detector. The in situ-EDXRD setup is demonstrated for the growth of tin-doped indium oxide (ITO) films prepared by reactive magnetron sputtering from a metallic target.

Influence of ion source configuration and its operation parameters on the target sputtering and implantation process.

Science.gov (United States)

Shalnov, K V; Kukhta, V R; Uemura, K; Ito, Y

2012-06-01

In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to α-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N(2)-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.

A cellular automata simulation study of surface roughening resulting from multi-atom etch pit generation during sputtering

Energy Technology Data Exchange (ETDEWEB)

Toh, Y S; Nobes, M J; Carter, G [Dept. of Electronic and Electrical Engineering, Univ. of Salford (United Kingdom)

1992-04-01

A two-dimensional square matrix of pseudo-atomic positions is erected and atom removal from the ''surface'' is effected randomly. Either single atoms or groups of atoms (to simulate multi-atom pit generation) are removed. The characteristics of the evolving roughened, terraced ''surface'' are evaluated as a function of the total number of atoms, or equivalent numbers of atomic layers, removed. These characteristics include the ''mean'' position of the sputtered surface, the standard deviation of terrace length about the mean and the form of the terrace length distributions. The results of the single-atom removal mode compare exactly with theoretical predictions in that, for large numbers of atoms removed the depth position of the mean of the terrace length distribution is identical to the mean sputtered depth and the standard deviation increases as the square root of this depth. For multi-atom removal modes (which cannot be predicted theoretically) the standard deviation also increases as the square root of the mean sputtered depth but with a larger proportionality constant. The implications of these observations for the evolution of surface morphology during high yield sputtering is discussed. (orig.).

Sputter-deposited Mg-Al-O thin films: linking molecular dynamics simulations to experiments

International Nuclear Information System (INIS)

Georgieva, V; Bogaerts, A; Saraiva, M; Depla, D; Jehanathan, N; Lebelev, O I

2009-01-01

Using a molecular dynamics model the crystallinity of Mg x Al y O z thin films with a variation in the stoichiometry of the thin film is studied at operating conditions similar to the experimental operating conditions of a dual magnetron sputter deposition system. The films are deposited on a crystalline or amorphous substrate. The Mg metal content in the film ranged from 100% (i.e. MgO film) to 0% (i.e. Al 2 O 3 film). The radial distribution function and density of the films are calculated. The results are compared with x-ray diffraction and transmission electron microscopy analyses of experimentally deposited thin films by the dual magnetron reactive sputtering process. Both simulation and experimental results show that the structure of the Mg-Al-O film varies from crystalline to amorphous when the Mg concentration decreases. It seems that the crystalline Mg-Al-O films have a MgO structure with Al atoms in between.

Simulation calculations of physical sputtering and reflection coefficient of plasma-irradiated carbon surface

International Nuclear Information System (INIS)

Kawamura, T.; Ono, T.; Yamamura, Y.

1994-08-01

Physical sputtering yields from the carbon surface irradiated by the boundary plasma are obtained with the use of a Monte Carlo simulation code ACAT. The yields are calculated for many random initial energy and angle values of incident protons or deuterons with a Maxwellian velocity distribution, and then averaged. Here the temperature of the boundary plasma, the sheath potential and the angle δ between the magnetic field line and the surface normal are taken into account. A new fitting formula for an arrangement of the numerical data of sputtering yield is introduced, in which six fitting parameters are determined from the numerical results and listed. These results provide a way to estimate the erosion of carbon materials irradiated by boundary plasma. The particle reflection coefficients for deuterons and their neutrals from a carbon surface are also calculated by the same code and presented together with, for comparison, that for the case of monoenergetic normal incidence. (author)

Monte Carlo simulation for theoretical calculations of damage and sputtering processes

International Nuclear Information System (INIS)

Yamamura, Yasunori

1984-01-01

The radiation damage accompanying ion irradiation and the various problems caused with it should be determined in principle by resolving Boltzmann's equations. However, in reality, those for a semi-infinite system cannot be generally resolved. Moreover, the effect of crystals, oblique incidence and so on make the situation more difficult. The analysis of the complicated phenomena of the collision in solids and the problems of radiation damage and sputtering accompanying them is possible in most cases only by computer simulation. At present, the methods of simulating the atomic collision phenomena in solids are roughly classified into molecular dynamics method and Monte Carlo method. In the molecular dynamics, Newton's equations are numerically calculated time-dependently as they are, and it has large merits that many body effect and nonlinear effect can be taken in consideration, but much computing time is required. The features and problems of the Monte Carlo simulation and nonlinear Monte Carlo simulation are described. The comparison of the Monte Carlo simulation codes calculating on the basis of two-body collision approximation, MARLOWE, TRIM and ACAT, was carried out through the calculation of the backscattering spectra of light ions. (Kako, I.)

Sputtering and reflection of self-bombardment of tungsten material

International Nuclear Information System (INIS)

Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

2015-01-01

In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

Sputtering and reflection of self-bombardment of tungsten material

Energy Technology Data Exchange (ETDEWEB)

Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

2015-04-15

In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

Surface processing with ionized cluster beams: computer simulation

International Nuclear Information System (INIS)

Insepov, Z.; Yamada, I.

1999-01-01

Molecular Dynamics (MD) and Monte Carlo (MC) models of energetic gas cluster irradiation of a solid surface have been developed to investigate the phenomena of crater formation, sputtering, surface treatment, and the material hardness evaluation by irradiation with cluster ions. Theoretical estimation of crater dimensions formed with Ar gas cluster ion irradiation of different substrates, based on hydrodynamics and MD simulation, are presented. The atomic scale shock waves arising from cluster impact were obtained by calculating the pressure, temperature and mass-velocity of the target atoms. The crater depth is given as a unique 1/3 dependence on the cluster energy and on the cold material Brinell hardness number (BHN). A new 'true material hardness' scale which can be very useful for example for thin film coatings deposited on a soft substrate, is defined. This finding could be used as a new technique for measuring of a material hardness. Evolution of surface morphology under cluster ion irradiation was described by the surface relaxation equation which contains a term of crater formation at cluster impact. The formation of ripples on a surface irradiated with oblique cluster ion beams was predicted. MD and MC models of Decaborane ion (B 10 H 14 ) implantation into Si and the following rapid thermal annealing (RTA) have been developed

Classical dynamics simulation of the fluence dependence of sputtering properties for the 2 keV Cu → Cu(1 0 0) system

International Nuclear Information System (INIS)

Karolewski, M.A.

2004-01-01

Classical dynamics simulations of sputtering have been carried out for 2 keV Cu projectiles incident on a Cu(1 0 0) crystallite target, in order to study the effects of projectile fluence on sputtering properties. Five projectiles are delivered into a 400 Ang 2 region of a Cu crystallite target at 5 ps intervals, giving a maximum fluence of 1.25 x 10 14 cm -2 in the primary impact zone. The altitudinal angle (φ) of the projectiles was 30 deg. (measured with respect to the surface), and the azimuthal (phi) direction of incidence was parallel to the surface atomic rows. The sputter yield is found not to depend sensitively on fluence. Over the fluence range investigated, the predicted standard deviation of the sputter yield is only 5% of the mean value of 11.7. Resputtered projectiles contribute less than 2% of the total sputter yield. With increasing fluence, the angular distribution of sputtered atoms tends to become less anisotropic. For example, the intensity modulations in the azimuthal angular distribution are reduced. This effect is due to the increasing contribution from atoms that are sputtered from defective structural environments. However, sputtered atom energy distributions and emission statistics show little dependence on fluence. The information depth of sputtered atoms increases rapidly with fluence, from 0.11 monolayers (ML) initially, to 1.2 ML after sputtering 0.25 ML from the primary impact zone

Molecular dynamics simulations of sputtering of organic overlayers by slow, large clusters

International Nuclear Information System (INIS)

Rzeznik, L.; Czerwinski, B.; Garrison, B.J.; Winograd, N.; Postawa, Z.

2008-01-01

The ion-stimulated desorption of organic molecules by impact of large and slow clusters is examined using molecular dynamics (MDs) computer simulations. The investigated system, represented by a monolayer of benzene deposited on Ag{1 1 1}, is irradiated with projectiles composed of thousands of noble gas atoms having a kinetic energy of 0.1-20 eV/atom. The sputtering yield of molecular species and the kinetic energy distributions are analyzed and compared to the results obtain for PS4 overlayer. The simulations demonstrate quite clearly that the physics of ejection by large and slow clusters is distinct from the ejection events stimulated by the popular SIMS clusters, like C 60 , Au 3 and SF 5 at tens of keV energies.

A current induced diffusion model of gas sputtering

International Nuclear Information System (INIS)

Hotston, E.S.

1980-01-01

A model is proposed to explain the experimental results on deuteron trapping in stainless steel targets at low temperatures carried out at Garching and Culham. The model proposes that the ions are trapped in two kinds of sites: Deep sites with high activation energy and shallow sites of low activation energy. Trapped deuterons reach the surface of the target by being expelled from shallow sites by the action of the ion beam and migrate to nearby sites in a random way, thus moving by a bombardment induced diffusion. Ions diffusing to the target surface and being released are said to be sputtered from the target. It has been necessary to assume numerical values for sizes of some of the processes which occur. With a suitable choice of values the model successfully predicts the numbers of deuterons trapped per unit area of the target, the obserbed density profile of the trapped ions and the threshold at which sputtering starts. The model also successfully describes the replacement of the trapped deuterons by protons, when the deuteron beam is replaced by a proton beam. The collision cross-section for beam ions and ions trapped in shallow sites is too large, 4 x 10 -13 cm 2 , for a binary collision and it is tentatively suggested that the ions in the shallow sites may be in small voids in the target which may be connected with blister formation. Comparison of the present model with one being developed to describe the trapping of deuterons in carbon suggests that it may be possible to describe all gas sputtering experiments in terms of diffusion processes. (orig.)

Collision cascades and sputtering induced by larger cluster ions

International Nuclear Information System (INIS)

Sigmund, P.

1988-01-01

Recent experimental work on larger cluster impact on solid surfaces suggests large deviations from the standard case of additive sputter yields both in the nuclear and electronic stopping regime. The paper concentrates on elastic collision cascades. In addition to very pronounced spike effects, two phenomena are pointed out that are specific to cluster bombardment. Multiple hits of cluster atoms on one and the same target atom may result in recoil atoms that move faster than the maximum recoil speed for monomer bombardment at the same projectile speed. This effect is important when the atomic mass of a beam atom is less than that of a target atom, M 1 2 . In the opposite case, M 1 >> M 2 , collisions between beam particles may accelerate some beam particles and slow down others. Some consequences are mentioned. Remarks on the nuclear stopping power of larger clusters and on electronic sputtering by cluster bombardment conclude the paper. 38 refs., 2 figs

Effect of sputtering on self-damaged ITER-grade tungsten

Energy Technology Data Exchange (ETDEWEB)

Voitsenya, V.S., E-mail: voitseny@ipp.kharkov.ua [Institute of Plasma Physics, National Scientific Center “Kharkov Institute of Physics and Technology”, 61108 Kharkov (Ukraine); Balden, M. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Bardamid, A.F. [Taras Shevchenko National University, 01033 Kiev (Ukraine); Belyaeva, A.I. [National Technical University “Kharkov Polytechnical Institute”, 61002 Kharkov (Ukraine); Bondarenko, V.N.; Skoryk, O.O.; Shtan’, A.F.; Solodovchenko, S.I. [Institute of Plasma Physics, National Scientific Center “Kharkov Institute of Physics and Technology”, 61108 Kharkov (Ukraine); Sterligov, V.A. [Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kiev (Ukraine); Tyburska-Püschel, B. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany)

2014-10-15

Simulation of neutron irradiation and sputtering on ITER-grade tungsten was studied. The effects of neutron-induced displacement damage have been simulated by irradiation of tungsten target with W{sup 6+} ions of 20 MeV energy. Bombardment by Ar{sup +} ions with energy 600 eV was used as imitation of impact of charge exchange atoms in ITER. The sputtering process was interrupted to perform in between measurements of the optical properties of the eroded surface and the mass loss. After sputtering was finished, the surface was thoroughly investigated by different methods for characterizing the surface relief developed due to sputtering. The damaging to, at least, the level that would be achieved in ITER does not lead to a decisive additional contribution to the processes under impact of charge exchange atoms only.

Second order nonlinear optical properties of zinc oxide films deposited by low temperature dual ion beam sputtering

International Nuclear Information System (INIS)

Larciprete, M.C.; Passeri, D.; Michelotti, F.; Paoloni, S.; Sibilia, C.; Bertolotti, M.; Belardini, A.; Sarto, F.; Somma, F.; Lo Mastro, S.

2005-01-01

We investigated second order optical nonlinearity of zinc oxide thin films, grown on glass substrates by the dual ion beam sputtering technique under different deposition conditions. Linear optical characterization of the films was carried out by spectrophotometric optical transmittance and reflectance measurements, giving the complex refractive index dispersion. Resistivity of the films was determined using the four-point probe sheet resistance method. Second harmonic generation measurements were performed by means of the Maker fringes technique where the fundamental beam was originated by nanosecond laser at λ=1064 nm. We found a relatively high nonlinear optical response, and evidence of a dependence of the nonlinear coefficient on the deposition parameters for each sample. Moreover, the crystalline properties of the films were investigated by x-ray diffraction measurements and correlation with second order nonlinearity were analyzed. Finally, we investigated the influence of the oxygen flow rate during the deposition process on both the second order nonlinearity and the structural properties of the samples

Simulation of Particle Fluxes at the DESY-II Test Beam Facility

International Nuclear Information System (INIS)

Schuetz, Anne

2015-05-01

In the course of this Master's thesis ''Simulation of Particle Fluxes at the DESY-II Test Beam Facility'' the test beam generation for the DESY test beam line was studied in detail and simulated with the simulation software SLIC. SLIC uses the Geant4 toolkit for realistic Monte Carlo simulations of particles passing through detector material.After discussing the physics processes relevant for the test beam generation and the principles of the beam generation itself, the software used is introduced together with a description of the functionality of the Geant4 Monte Carlo simulation. The simulation of the test beam line follows the sequence of the test beam generation. Therefore, it starts with the simulation of the beam bunch of the synchrotron accelerator DESY-II, and proceeds step by step with the single test beam line components. An additional benefit of this thesis is the provision of particle flux and trajectory maps, which make fluxes directly visible by following the particle tracks through the simulated beam line. These maps allow us to see each of the test beam line components, because flux rates and directions change rapidly at these points. They will also guide the decision for placements of future test beam line components and measurement equipment.In the end, the beam energy and its spread, and the beam rate of the final test beam in the test beam area were studied in the simulation, so that the results can be compared to the measured beam parameters. The test beam simulation of this Master's thesis will serve as a key input for future test beam line improvements.

High-Performance Beam Simulator for the LANSCE Linac

International Nuclear Information System (INIS)

Pang, Xiaoying; Rybarcyk, Lawrence J.; Baily, Scott A.

2012-01-01

A high performance multiparticle tracking simulator is currently under development at Los Alamos. The heart of the simulator is based upon the beam dynamics simulation algorithms of the PARMILA code, but implemented in C++ on Graphics Processing Unit (GPU) hardware using NVIDIA's CUDA platform. Linac operating set points are provided to the simulator via the EPICS control system so that changes of the real time linac parameters are tracked and the simulation results updated automatically. This simulator will provide valuable insight into the beam dynamics along a linac in pseudo real-time, especially where direct measurements of the beam properties do not exist. Details regarding the approach, benefits and performance are presented.

Advanced capabilities and applications of a sputter-RBS system

International Nuclear Information System (INIS)

Brijs, B.; Deleu, J.; Beyer, G.; Vandervorst, W.

1999-01-01

In previous experiments, sputter-RBS 1 has proven to be an ideal tool to study the interaction of low energy ions. This contribution employs the same methodology to identify surface contamination induced during sputtering and to the determine absolute sputter yields. In the first experiment ERDA analysis was used to study the evolution of Hydrogen contamination during sputter-RBS experiments. Since the determination of Hydrogen concentration in very thin near surface layers is frequently limited by the presence of a strong surface peak of Hydrogen originating from adsorbed contamination of the residual vacuum, removal of this contamination would increase the sensitivity for Hydrogen detection in the near sub surface drastically. Therefore low energy (12 keV) Argon sputtering was used to remove the Hydrogen surface peak. However enhanced Hydrogen adsorption was observed related to the Ar dose. This experiment shows that severe vacuum conditions and the use of high current densities/sputter yields are a prerequisite for an efficient detection of Hydrogen in the near surface layers. In the second experiment, an attempt was made to determine the sputter yield of Cu during low energy (12 keV) Oxygen bombardment. In order to determine the accumulated dose of the low energy ion beam, a separate Faraday cup in combination with a remote controlled current have been added to the existing sputter-RBS set-up. Alternating sputtering and RBS analysis seem to be an adequate tool for the determination of the absolute sputter yield of Cu and this as well in the as under steady state conditions

Beam Simulations for IRE and Driver-Status and Strategy

International Nuclear Information System (INIS)

Friedman, A.; Grote, D.P.; Lee, E.P.; Sonnendrucker, E.

2000-01-01

The methods and codes employed in the U.S. Heavy Ion Fusion program to simulate the beams in an Integrated Research Experiments (IRE) facility and a fusion driver are presented in overview. A new family of models incorporating accelerating module impedance, multi-beam, and self-magnetic effects is described, and initial WARP3d particle simulations of beams using these models are presented. Finally, plans for streamlining the machine-design simulation sequence, and for simulating beam dynamics from the source to the target in a consistent and comprehensive manner, are described

Simulation of wire-compensation of long range beam beam interaction in high energy accelerators

International Nuclear Information System (INIS)

Dorda, U.; )

2006-01-01

Full text: We present weak-strong simulation results for the effect of long-range beam-beam (LRBB) interaction in LHC as well as for proposed wire compensation schemes or wire experiments, respectively. In particular, we discuss details of the simulation model, instability indicators, the effectiveness of compensation, the difference between nominal and PACMAN bunches for the LHC, beam experiments, and wire tolerances. The simulations are performed with the new code BBTrack. (author)

Sputtering of copper (110) by 3 keV argon - a computer simulation

International Nuclear Information System (INIS)

Weygandt, A.; King, B.V.

1998-01-01

The aims of this study are to investigate the angular distribution of atoms sputtered from {110} surface of a copper monocrystal due to normal incidence 3 keV Argon impact as well as to examine the change of sputtering behaviour with temperature from 0 K to 670 K. We have used the Molecular Dynamics (MD) code SPUT93 to study sputtering. In MD codes Newton's equations of motion are solved simultanously for all atoms of a crystal. The forces acting on a particle are found from derivatives of a model potential function. For the present study an embedded atom method (EAM) potential was used. It was found that the total sputter yield for the warm crystal (670K) of 3.13 ± 0.03 is in agreement with experimental results and indicate that the temperature of the target has generally no direct influence on the sputtering yield. It was estimated that heating the crystal only causes more uniform emission. It was also found that ejection due to the collisions between atoms in the top layers along closed-packed directions become important. The mechanisms which determine the angular distributions of atoms sputtered from a copper crystal were identified

Beam Dynamics Simulation for the CTF3 Drive Beam Accelerator

CERN Document Server

Schulte, Daniel

2000-01-01

A new CLIC Test Facility (CTF3) at CERN will serve to study the drive beam generation for the Compact Linear Collider (CLIC). CTF3 has to accelerate a 3.5 A electron beam in almost fully-loaded structures. The pulse contains more than 2000 bunches, one in every second RF bucket, and has a length of more than one microsecond. Different options for the lattice of the drive-beam accelerator are presented, based on FODO-cells and triplets as well as solenoids. The transverse stability is simulated, including the effects of beam jitter, alignment and beam-based correction.

Ion-nanostructure interaction. Comparing simulation and experiment towards surface structuring using nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Holland-Moritz, Henry

2016-10-18

Nanotechnology is a buzzword in context of the proceeding miniaturization of devices and their components. Nanoparticles (NPs) can nowadays easily be synthesized from different material compositions by different chemical and physical processes. However, most of these techniques work close to or at the thermal equilibrium. One subsequent approach to tune materials beyond equilibrium conditions is ion beam irradiation. An important effect of this approach is sputtering. Sputtering is enhanced in NPs compared to their bulk counterparts due to their large surface-to-volume ratio, especially when the ion range matches the NP size. In this work, the sputtering effects of Ar{sup +} and Ga{sup +} ion irradiated Au nanoparticles are investigated in detail by Monte Carlo (MC) and molecular dynamics (MD) simulations and a variety of experiments. The sputtering of Ar{sup +} and Ga{sup +} irradiated Au NPs was investigated as a function of ion energy, NP size and impact parameter by the MC code iradina and MD code parcas. The simulation results are directly compared to experiments using high resolution scanning electron microscopy (SEM) of Au NPs on top of Si, whereat the sputter yields are significantly enhanced compared to the MC simulations. Additionally, the interaction of NPs and substrate were investigated by Rutherford backscatter spectrometry (RBS), atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM). A new MC code was developed to study the redeposition of sputtered atoms of Ga{sup +} irradiated Au NP arrays on neighboring NPs. The redeposition can lead to growth of NPs with diameters of 1 nm in vicinity of ∝50 nm NP. These simulations are directly compared to an in situ experiment. Nanostructures, spherical NPs as well as nanowires (NWs) are used as irradiation masks to structure lithium niobate (LNO) using the ion beam enhanced etching (IBEE) technique. The aspect ratio of the obtained structures can be enhanced by a second IBEE step

Optical and tribomechanical stability of optically variable interference security devices prepared by dual ion beam sputtering.

Science.gov (United States)

Çetinörgü-Goldenberg, Eda; Baloukas, Bill; Zabeida, Oleg; Klemberg-Sapieha, Jolanta; Martinu, Ludvik

2011-07-01

Optical security devices applied to banknotes and other documents are exposed to different types of harsh environments involving the cycling of temperature, humidity, chemical agents, and tribomechanical intrusion. In the present work, we study the stability of optically variable devices, namely metameric interference filters, prepared by dual ion beam sputtering onto polycarbonate and glass substrates. Specifically, we assess the color difference as well as the changes in the mechanical properties and integrity of all-dielectric and metal-dielectric systems due to exposure to bleach, detergent and acetone agents, and heat and humidity. The results underline a significant role of the substrate material, of the interfaces, and of the nature and microstructure of the deposited films in long term stability under everyday application conditions.

Compact electrostatic beam optics for multi-element focused ion beams: simulation and experiments.

Science.gov (United States)

Mathew, Jose V; Bhattacharjee, Sudeep

2011-01-01

Electrostatic beam optics for a multi-element focused ion beam (MEFIB) system comprising of a microwave multicusp plasma (ion) source is designed with the help of two widely known and commercially available beam simulation codes: AXCEL-INP and SIMION. The input parameters to the simulations are obtained from experiments carried out in the system. A single and a double Einzel lens system (ELS) with and without beam limiting apertures (S) have been investigated. For a 1 mm beam at the plasma electrode aperture, the rms emittance of the focused ion beam is found to reduce from ∼0.9 mm mrad for single ELS to ∼0.5 mm mrad for a double ELS, when S of 0.5 mm aperture size is employed. The emittance can be further improved to ∼0.1 mm mrad by maintaining S at ground potential, leading to reduction in beam spot size (∼10 μm). The double ELS design is optimized for different electrode geometrical parameters with tolerances of ±1 mm in electrode thickness, electrode aperture, inter electrode distance, and ±1° in electrode angle, providing a robust design. Experimental results obtained with the double ELS for the focused beam current and spot size, agree reasonably well with the simulations.

Structural and corrosion characterization of hydroxyapatite/zirconium nitride-coated AZ91 magnesium alloy by ion beam sputtering

Energy Technology Data Exchange (ETDEWEB)

Kiahosseini, Seyed Rahim, E-mail: rkiahoseyni@yahoo.com [Young Researchers and Elite Club, Damghan Branch, Islamic Azad University, Damghan (Iran, Islamic Republic of); Afshar, Abdollah [Department of Material Science and Engineering, Sharif University of Technology, Tehran (Iran, Islamic Republic of); Mojtahedzadeh Larijani, Majid [Radiation Applications Research School, Nuclear Science and Technology Research Institute, Tehran (Iran, Islamic Republic of); Yousefpour, Mardali [Faculty of Materials and Metallurgical Engineering, Semnan University, Semnan, 35131-19111 (Iran, Islamic Republic of)

2017-04-15

Highlights: • The thickness of HA coatings increase by ion beam sputtering time. • The residual strain in HA structure decrease by deposition time increment. • Crystallite size of HA coatings increase by deposition time increment. • The best corrosion resistance occurs at intermediate deposition time. - Abstract: The adhesion of hydroxyapatite (HA) as a coating for the AZ91 magnesium alloy substrate can be improved by using the sputtering method and an intermediate layer, such as ZrN. In this study, HA coatings were applied on ZrN intermediate layers at a temperature of 300 °C for 180, 240, 300, 360, and 420 min by ion beam sputtering. A profilometer device was used to study the HA coating thickness, which changed from 2 μm for the 180-min deposition to 4.7 μm for 420-min deposition. The grazing incidence X-ray diffraction analysis method and the Williamson–Hall analysis were used for structural investigation. As the deposition time increased, the crystalline size increased from 50 nm to 690 nm. However, given sufficient time for stress relief on the coating structure, the lattice strain values were close to zero. Energy-dispersive X-ray spectroscopy results showed that the Ca/P ratio ranged from 1.73 to 1.81. The external indentation method was used to evaluate the coating adhesion to the substrate. The slope of curve for applied force changes versus the radius of cracks in the coating (dP/dr) varied in the range of 0.2–0.07 by the deposition time, indicating that the adhesion increased with the increase in coating thickness. The potentiodynamic polarization technique was used to study the corrosion behavior. With increasing deposition time, the corrosion potential of samples did not show a significant change, and the corrosion potential of all samples (coated and uncoated substrates) was more positive than approximately 55 mV. When the deposition time increased to 360 min, the corrosion current density decreased from 5.5 μA/cm{sup 2} to 0.33 �

Multi-jump magnetic switching in ion-beam sputtered amorphous Co20Fe60B20 thin films

International Nuclear Information System (INIS)

Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

2013-01-01

Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co 20 Fe 60 B 20 (5–75 nm) thin films grown on Si/amorphous SiO 2 are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices

The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

Science.gov (United States)

Zhao, Jun; Liang, Guangxing; Zeng, Yang; Fan, Ping; Hu, Juguang; Luo, Jingting; Zhang, Dongping

2017-02-01

The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. Project supported by the National Natural Science Foundation of China (No. 61404086), the Basical Research Program of Shenzhen (Nos. JCYJ20150324140036866, JCYJ20150324141711581), and the Natural Science Foundation of SZU (No. 2014017).

Accurate argon cluster-ion sputter yields: Measured yields and effect of the sputter threshold in practical depth-profiling by x-ray photoelectron spectroscopy and secondary ion mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

Cumpson, Peter J.; Portoles, Jose F.; Barlow, Anders J.; Sano, Naoko [National EPSRC XPS User' s Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom)

2013-09-28

Argon Gas Cluster-Ion Beam sources are likely to become widely used on x-ray photoelectron spectroscopy and secondary ion mass spectrometry instruments in the next few years. At typical energies used for sputter depth profiling the average argon atom in the cluster has a kinetic energy comparable with the sputter threshold, meaning that for the first time in practical surface analysis a quantitative model of sputter yields near threshold is needed. We develop a simple equation based on a very simple model. Though greatly simplified it is likely to have realistic limiting behaviour and can be made useful for estimating sputter yields by fitting its three parameters to experimental data. We measure argon cluster-ion sputter yield using a quartz crystal microbalance close to the sputter threshold, for silicon dioxide, poly(methyl methacrylate), and polystyrene and (along with data for gold from the existing literature) perform least-squares fits of our new sputter yield equation to this data. The equation performs well, with smaller residuals than for earlier empirical models, but more importantly it is very easy to use in the design and quantification of sputter depth-profiling experiments.

Sputtering properties of tungsten 'fuzzy' surfaces

International Nuclear Information System (INIS)

Nishijima, D.; Baldwin, M.J.; Doerner, R.P.; Yu, J.H.

2011-01-01

Sputtering yields of He-induced W 'fuzzy' surfaces bombarded by Ar have been measured in the linear divertor plasma simulator PISCES-B. It is found that the sputtering yield of a fuzzy surface, Y fuzzy , decreases with increasing fuzzy layer thickness, L, and saturates at ∼10% of that of a smooth surface, Y smooth , at L > 1 μm. The reduction in the sputtering yield is suspected to be due mainly to the porous structure of fuzz, since the ratio, Y fuzzy /Y smooth follows (1 - p fuzz ), where p fuzz is the fuzz porosity. Further, Y fuzzy /Y smooth is observed to increase with incident ion energy, E i . This may be explained by an energy dependent change in the angular distribution of sputtered W atoms, since at lower E i , the angular distribution is observed to become more butterfly-shaped. That is, a larger fraction of sputtered W atoms can line-of-sight deposit/stick onto neighboring fuzz nanostructures for lower E i butterfly distributions, resulting in lower ratio of Y fuzzy /Y smooth .

Time domain simulations of beam-loading

International Nuclear Information System (INIS)

Koscielniak, S.

1989-09-01

We present the results of computer simulations of high current beam loading in a proton storage ring. The model integrates the differential equation for gap voltage, and iterates the difference equations for particle longitudinal motion. The effects of cavity fields on the bunch shape and of the fundamental component of the beam on the cavity are treated in a self-consistent manner. The simulation model is applied to verify the dipole-quadrupole hybrid Robinson instability criterion, which differs from the dipole-mode criterion

Topography of InP surface bombarded by O2+ ion beam

International Nuclear Information System (INIS)

Sun Zhaoqi

1997-01-01

The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

Large Scale Beam-beam Simulations for the CERN LHC using Distributed Computing

CERN Document Server

Herr, Werner; McIntosh, E; Schmidt, F

2006-01-01

We report on a large scale simulation of beam-beam effects for the CERN Large Hadron Collider (LHC). The stability of particles which experience head-on and long-range beam-beam effects was investigated for different optical configurations and machine imperfections. To cover the interesting parameter space required computing resources not available at CERN. The necessary resources were available in the LHC@home project, based on the BOINC platform. At present, this project makes more than 60000 hosts available for distributed computing. We shall discuss our experience using this system during a simulation campaign of more than six months and describe the tools and procedures necessary to ensure consistent results. The results from this extended study are presented and future plans are discussed.

Evaluation of the BEAM--BEAM effect in PEP using Myer's simulation program

International Nuclear Information System (INIS)

Hutton, A.

1982-09-01

The program BEAM BEAM written by Steve Myers for the LEP machine at CERN has given encouraging results in the simulation of the beam-beam effect in electron-positron storage rings. It therefore seemed worthwhile to apply the program to PEP with two main intentions. Firstly, to confirm the validity of the program by comparison with experimental data from previous PEP runs and secondly, to search for an improvement in the operating conditions of PEP. Clearly a successful prediction would also enhance the credibility of the program. The program itself has been extensively described in the literature and will not be repeated here, except for some comments of direct relevance to the present simulation. 14 refs., 15 figs., 4 tabs

LSST beam simulator

International Nuclear Information System (INIS)

Tyson, J A; Klint, M; Sasian, J; Claver, C; Muller, G; Gilmor, K

2014-01-01

It is always important to test new imagers for a mosaic camera before device acceptance and constructing the mosaic. This is particularly true of the LSST CCDs due to the fast beam illumination: at long wavelengths there can be significant beam divergence (defocus) inside the silicon because of the long absorption length for photons near the band gap. Moreover, realistic sky scenes need to be projected onto the CCD focal plane Thus, we need to design and build an f/1.2 re-imaging system. The system must simulate the entire LSST 1 operation, including a sky with galaxies and stars with approximately black-body spectra superimposed on a spatially diffuse night sky emission with its complex spectral features

Post-excitation of sputtered neutral atoms and application to the surface microanalysis by ionoluminescence

International Nuclear Information System (INIS)

Bourdilot, M.; Paletto, S.; Goutte, R.; Guillaud, C.

1975-01-01

During the bombardment of a solid target by a positive ion beam, an emission of light proceeding of the deexcitation of the neutral atoms which are sputtered in an excited state, is observed. This phenomenon is used in ionoluminescence analysis. By exciting the neutral atoms sputtered with an auxiliary discharge it is seen that: it is possible to increase, under certain experimental conditions, the sensibility of the ionoluminescence method. This post-excitation is particularly efficient with targets having an high sputtering coefficient [fr

Acceleration of 14C beams in electrostatic accelerators

International Nuclear Information System (INIS)

Rowton, L.J.; Tesmer, J.R.

1981-01-01

Operational problems in the production and acceleration of 14 C beams for nuclear structure research in Los Alamos National Laboratory's Van de Graaff accelerators are discussed. Methods for the control of contamination in ion sources, accelerators and personnel are described. Sputter source target fabrication techniques and the relative beam production efficiencies of various types of bound particulate carbon sputter source targets are presented

Simulation based analysis of laser beam brazing

Science.gov (United States)

Dobler, Michael; Wiethop, Philipp; Schmid, Daniel; Schmidt, Michael

2016-03-01

Laser beam brazing is a well-established joining technology in car body manufacturing with main applications in the joining of divided tailgates and the joining of roof and side panels. A key advantage of laser brazed joints is the seam's visual quality which satisfies highest requirements. However, the laser beam brazing process is very complex and process dynamics are only partially understood. In order to gain deeper knowledge of the laser beam brazing process, to determine optimal process parameters and to test process variants, a transient three-dimensional simulation model of laser beam brazing is developed. This model takes into account energy input, heat transfer as well as fluid and wetting dynamics that lead to the formation of the brazing seam. A validation of the simulation model is performed by metallographic analysis and thermocouple measurements for different parameter sets of the brazing process. These results show that the multi-physical simulation model not only can be used to gain insight into the laser brazing process but also offers the possibility of process optimization in industrial applications. The model's capabilities in determining optimal process parameters are exemplarily shown for the laser power. Small deviations in the energy input can affect the brazing results significantly. Therefore, the simulation model is used to analyze the effect of the lateral laser beam position on the energy input and the resulting brazing seam.

Energy sharing and sputtering in low-energy collision cascades

International Nuclear Information System (INIS)

Weller, R.A.; Weller, M.R.

1982-01-01

Using a non-linear transport equation to describe the energy-sharing process in an isotropic collision cascade, we have numerically calculated sputtered particle velocity spectra for several very low energy (=< 10 eV) primary recoil distributions. Our formulation of the sputtering process is essentially that used in the linear model and our equations yield the familiar linear model results in the appropriate limit. Discrepancies between our calculations and the linear model results in other cases may be understood by considering the effects of the linear model assumptions on the sputtering yield at very low energies. Our calculations are also compared with recent experimental results investigating ion-explosion sputtering. The results of this comparison support the conclusion that in insulators sputtering is initiated by very low energy recoil atoms when the energy of the incident beam is high enough that the stopping power is dominated by the electronic contribution. The calculations also suggest that energy spectra similar to those for evaporation may result from non-equilibrium processes but that the apparent temperatures of evaporation are not related in a simple way to any real temperature within the target. (author)

Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

International Nuclear Information System (INIS)

Zhang, Lili; Xu, Xue; Wu, Yuejin

2013-01-01

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N + and Ar + ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models

Spectral artefacts post sputter-etching and how to cope with them - A case study of XPS on nitride-based coatings using monoatomic and cluster ion beams

Science.gov (United States)

Lewin, Erik; Counsell, Jonathan; Patscheider, Jörg

2018-06-01

The issue of artefacts due to sputter-etching has been investigated for a group of AlN-based thin film materials with varying thermodynamical stability. Stability of the materials was controlled by alloying AlN with the group 14 elements Si, Ge or Sn in two different concentrations. The coatings were sputter-etched with monoatomic Ar+ with energies between 0.2 and 4.0 keV to study the sensitivity of the materials for sputter damage. The use of Arn+ clusters to remove an oxidised surface layer was also evaluated for a selected sample. The spectra were compared to pristine spectra obtained after in-vacuo sample transfer from the synthesis chamber to the analysis instrument. It was found that the all samples were affected by high energy (4 keV) Ar+ ions to varying degrees. The determining factors for the amount of observed damage were found to be the materials' enthalpy of formation, where a threshold value seems to exist at approximately -1.25 eV/atom (∼-120 kJ/mol atoms). For each sample, the observed amount of damage was found to have a linear dependence to the energy deposited by the ion beam per volume removed material. Despite the occurrence of sputter-damage in all samples, etching settings that result in almost artefact-free spectral data were found; using either very low energy (i.e. 200 eV) monoatomic ions, or an appropriate combination of ion cluster size and energy. The present study underlines that analysis post sputter-etching must be carried out with an awareness of possible sputter-induced artefacts.

Simulation of ion beam scattering in a gas stripper

Energy Technology Data Exchange (ETDEWEB)

Maxeiner, Sascha, E-mail: maxeiner@phys.ethz.ch; Suter, Martin; Christl, Marcus; Synal, Hans-Arno

2015-10-15

Ion beam scattering in the gas stripper of an accelerator mass spectrometer (AMS) enlarges the beam phase space and broadens its energy distribution. As the size of the injected beam depends on the acceleration voltage through phase space compression, the stripper becomes a limiting factor of the overall system transmission especially for low energy AMS system in the sub MV region. The spatial beam broadening and collisions with the accelerator tube walls are a possible source for machine background and energy loss fluctuations influence the mass resolution and thus isotope separation. To investigate the physical processes responsible for these effects, a computer simulation approach was chosen. Monte Carlo simulation methods are applied to simulate elastic two body scattering processes in screened Coulomb potentials in a (gas) stripper and formulas are derived to correctly determine random collision parameters and free path lengths for arbitrary (and non-homogeneous) gas densities. A simple parametric form for the underlying scattering cross sections is discussed which features important scaling behaviors. An implementation of the simulation was able to correctly model the data gained with the TANDY AMS system at ETH Zurich. The experiment covered transmission measurements of uranium ions in helium and beam profile measurements after the ion beam passed through the He-stripper. Beam profiles measured up to very high stripper densities could be understood in full system simulations including the relevant ion optics. The presented model therefore simulates the fundamental physics of the interaction between an ion beam and a gas stripper reliably. It provides a powerful and flexible tool for optimizing existing AMS stripper geometries and for designing new, state of the art low energy AMS systems.

Round Robin computer simulation of ejection probability in sputtering

International Nuclear Information System (INIS)

Sigmund, P.; Hautala, M.; Yamamura, Y.; Hosaka, S.; Ishitani, T.; Shulga, V.I.; Harrison, D.E. Jr.; Chakarov, I.R.; Karpuzov, D.S.; Kawatoh, E.; Shimizu, R.; Valkealahti, S.; Nieminen, R.M.; Betz, G.; Husinsky, W.; Shapiro, M.H.; Vicanek, M.; Urbassek, H.M.

1989-01-01

We have studied the ejection of a copper atom through a planar copper surface as a function of recoil velocity and depth of origin. Results were obtained from six molecular dynamics codes, four binary collision lattice simulation codes, and eight Monte Carlo codes. Most results were found with a Born-Mayer interaction potential between the atoms with Gibson 2 parameters and a planar surface barrier, but variations on this standard were allowed for, as well as differences in the adopted cutoff radius for the interaction potential, electronic stopping, and target temperature. Large differences were found between the predictions of the various codes, but the cause of these differences could be determined in most cases. A fairly clear picture emerges from all three types of codes for the depth range and the angular range for ejection at energies relevant to sputter ejection, although a quantitative discussion would have to include an analysis of replacement collision events which has been left out here. (orig.)

Angular distributions of particles sputtered from polycrystalline platinum by low-energy ions

International Nuclear Information System (INIS)

Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

2000-01-01

The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 3-9 keV Ne + bombardment at normal ion incidence are presented. It was found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of an ion energy. Comparison with the previously obtained data for He + and Ar + ions have shown that the shape of the angular distribution does not depend on the bombarding ion species. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for Ne ion bombardment were performed and the comparison with corresponding data for He and Ar bombarding was made. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

A compact CMA spectrometer with axially integrated hybrid electron-ion gun for ISS, AES and sputter depth profile analysis

International Nuclear Information System (INIS)

Gisler, E.; Bas, E.B.

1986-01-01

Until now, the combined application of electrons and ions in surface analysis required two separate sources for electrons and ions with different incidence angles. The newly developed hybrid electron-ion gun, however, allows bombardment of the same sample area both with noble gas ions and with electrons coming from the same direction. By integrating such a hybrid gun axially in a cylindrical mirror energy analyser (CMA) a sensitive compact single flange spectrometer obtains for ion scattering spectroscopy (ISS), Auger electron spectroscopy (AES), and sputtering all within normal beam incidence. This concept makes accurate beam centering very easy. Additionally, the bombardment from the same direction both for sputtering and for surface analysis brings advantages in depth profiling. The scattering angle for ISS has a constant value of about 138 0 . The hybrid gun delivers typically an electron beam current of -20μA at 3keV for AES, and an ion beam current of +40 nA and +1.2μA at 2 keV for ISS and sputtering respectively. The switching time between ISS, AES, and sputtering mode is about 0.1 s. So this system is best suited for automatically controlled depth profile analysis. The design and operation of this new system will be described and some applications will be discussed. (author)

Beam-Beam Simulation of Crab Cavity White Noise for LHC Upgrade

CERN Document Server

Qiang, J; Pieloni, Tatiana; Ohmi, Kazuhito

2015-01-01

High luminosity LHC upgrade will improve the luminosity of the current LHC operation by an order of magnitude. Crab cavity as a critical component for compensating luminosity loss from large crossing angle collision and also providing luminosity leveling for the LHC upgrade is being actively pursued. In this paper, we will report on the study of potential effects of the crab cavity white noise errors on the beam luminosity lifetime based on strong-strong beam-beam simulations.

Simulation and Measurements of Beam Losses on LHC Collimators During Beam Abort Failures

CERN Document Server

Lari, L; Bruce, R; Goddard, B; Redaelli, S; Salvachua, B; Valentino, G; Faus-Golfe, A

2013-01-01

One of the main purposes of tracking simulations for collimation studies is to produce loss maps along the LHC ring, in order to identify the level of local beam losses during nominal and abnormal operation scenarios. The SixTrack program is the standard tracking tool used at CERN to perform these studies. Recently, it was expanded in order to evaluate the proton load on different collimators in case of fast beam failures. Simulations are compared with beam measurements at 4 TeV. Combined failures are assumed which provide worst-case scenarios of the load on tungsten tertiary collimators.

X-ray-ultraviolet beam splitters for the Michelson interferometer

International Nuclear Information System (INIS)

Delmotte, Franck; Ravet, Marie-Francoise; Bridou, Francoise; Varniere, Francoise; Zeitoun, Philippe; Hubert, Sebastien; Vanbostal, Laurent; Soullie, Gerard

2002-01-01

With the aim of realizing a Michelson interferometer working at 13.9 nm, we have developed a symmetrical beam splitter with multilayers deposited on the front and back sides of a silicon nitride membrane. On the basis of the experimental optical properties of the membrane, simulations have been performed to define the multilayer structure that provides the highest reflectivity-transmission product. Optimized Mo-Si multilayers have been successfully deposited on both sides of the membrane by use of the ion-beam sputtering technique, with a thickness-period reproducibility of 0.1 nm. Measurements by means of synchrotron radiation at 13.9 nm and at an angle of 45 deg. provide a reflectivity of 14.2% and a transmission of 15.2% for a 60% s-polarized light, close to the simulated values. Such a beam splitter has been used for x-ray laser Michelson interferometry at 13.9 nm. The first interferogram is discussed

X-ray-ultraviolet beam splitters for the Michelson interferometer.

Science.gov (United States)

Delmotte, Franck; Ravet, Marie-Françoise; Bridou, Françoise; Varnière, Françoise; Zeitoun, Philippe; Hubert, Sébastien; Vanbostal, Laurent; Soullie, Gérard

2002-10-01

With the aim of realizing a Michelson interferometer working at 13.9 nm, we have developed a symmetrical beam splitter with multilayers deposited on the front and back sides of a silicon nitride membrane. On the basis of the experimental optical properties of the membrane, simulations have been performed to define the multilayer structure that provides the highest reflectivity-transmission product. Optimized Mo-Si multilayers have been successfully deposited on both sides of t he membrane by use of the ion-beam sputtering technique, with a thickness-period reproducibility of 0.1 nm. Measurements by means of synchrotron radiation at 13.9 nm and at an angle of 45 degrees provide a reflectivity of 14.2% and a transmission of 15.2% for a 60% s-polarized light, close to the simulated values. Such a beam splitter has been used for x-ray laser Michelson interferometry at 13.9 nm. The first interferogram is discussed.

C60 ion sputtering of layered organic materials

International Nuclear Information System (INIS)

Shard, Alexander G.; Green, Felicia M.; Gilmore, Ian S.

2008-01-01

Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (∼2.5 nm) in comparison to the Irganox1010 (∼55 or ∼90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C 60 ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.

Ion-induced sputtering

International Nuclear Information System (INIS)

Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

1983-01-01

The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

Numerical simulation of electron beam welding with beam oscillations

Science.gov (United States)

Trushnikov, D. N.; Permyakov, G. L.

2017-02-01

This research examines the process of electron-beam welding in a keyhole mode with the use of beam oscillations. We study the impact of various beam oscillations and their parameters on the shape of the keyhole, the flow of heat and mass transfer processes and weld parameters to develop methodological recommendations. A numerical three-dimensional mathematical model of electron beam welding is presented. The model was developed on the basis of a heat conduction equation and a Navier-Stokes equation taking into account phase transitions at the interface of a solid and liquid phase and thermocapillary convection (Marangoni effect). The shape of the keyhole is determined based on experimental data on the parameters of the secondary signal by using the method of a synchronous accumulation. Calculations of thermal and hydrodynamic processes were carried out based on a computer cluster, using a simulation package COMSOL Multiphysics.

Atom beam sputtered Ag-TiO{sub 2} plasmonic nanocomposite thin films for photocatalytic applications

Energy Technology Data Exchange (ETDEWEB)

Singh, Jaspal; Sahu, Kavita [School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, NewDelhi 110078 (India); Pandey, A. [Solid State Physics Laboratory, Defence Research and Development Organization, Timarpur, Delhi 110054 (India); Kumar, Mohit [Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751005 (India); Ghosh, Tapas; Satpati, B. [Saha Institute of Nuclear Physics, HBNI, 1/AF, Bidhannagar, Kolkata 700064 (India); Som, T.; Varma, S. [Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751005 (India); Avasthi, D.K. [Amity Institute of Nanotechnology, Noida 201313, Uttar Pradesh (India); Mohapatra, Satyabrata, E-mail: smiuac@gmail.com [School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, NewDelhi 110078 (India)

2017-07-31

The development of nanocomposite coatings with highly enhanced photocatalytic activity is important for photocatalytic purification of water and air. We report on the synthesis of Ag-TiO{sub 2} nanocomposite thin films with highly enhanced photocatalytic activity by atom beam co-sputtering technique. The effects of Ag concentration on the structural, morphological, optical, plasmonic and photocatalytic properties of the nanocomposite thin films were investigated. UV–visible DRS studies revealed the presence of surface plasmon resonance (SPR) peak characteristic of Ag nanoparticles together with the excitonic absorption peak originating from TiO{sub 2} nanoparticles in the nanocomposites. XRD studies showed that the nanocomposite thin films consist of Ag nanoparticles and rutile TiO{sub 2} nanoparticles. The synthesized Ag-TiO{sub 2} nanocomposite thin films with 5 at% Ag were found to exhibit highly enhanced photocatalytic activity for sun light driven photocatalytic degradation of methylene blue in water, indicating their potential application in water purification.

Ion beams in materials processing and analysis

CERN Document Server

Schmidt, Bernd

2012-01-01

This book covers ion beam application in modern materials research, offering the basics of ion beam physics and technology and a detailed account of the physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning.

Ultrasonic Beam Propagation in Highly Anisotropic Materials Simulated by Multi-Gaussian Beams

International Nuclear Information System (INIS)

Jeong, Hyun Jo; Schmerr, Lester W.

2007-01-01

The necessity of nondestructively inspecting fiber-reinforced composites, austenitic steels, and other inherently anisotropic materials has stimulated considerable interest in developing beam models for anisotropic media. The properties of slowness surface play key role in the beam models based on the paraxial approximation. In this paper, we apply a modular multi-Gaussian beam (MMGB) model to study the effects of material anisotropy on ultrasonic beam profile. It is shown that the anisotropic effects of beam skew and excess beam divergence enter into the MMGB model through parameters defining the slope and curvature of the slowness surface. The overall beam profile is found when the quasi longitudinal (qL) beam propagates in the symmetry plane of a transversely isotropic gr/ep composite. Simulation results are presented to illustrate the effects of these parameters on ultrasonic beam diffraction and beam skew. The MMGB calculations are also checked by comparing the anisotropy factor and beam skew angle with other analytical solutions

Simulation of a low energy beam transport line

International Nuclear Information System (INIS)

Yang Yao; Liu Zhanwen; Zhang Wenhui; Ma Hongyi; Zhang Xuezhen; Zhao Hongwei; Yao Ze'en

2012-01-01

A 2.45 GHz electron cyclotron resonance intense proton source and a low energy beam transport line with dual-Glaser lens were designed and fabricated by Institute of Modern Physics for a compact pulsed hadron source at Tsinghua. The intense proton beams extracted from the ion source are transported through the transport line to match the downstream radio frequency quadrupole accelerator. Particle-in-cell code BEAMPATH was used to carry out the beam transport simulations and optimize the magnetic field structures of the transport line. Emittance growth due to space charge and spherical aberrations of the Glaser lens were studied in both theory and simulation. The results show that narrow beam has smaller aberrations and better beam quality through the transport line. To better match the radio frequency quadrupole accelerator, a shorter transport line is desired with sufficient space charge neutralization. (authors)

Fabrication of highly oriented β-FeSi2 by ion beam sputter deposition

International Nuclear Information System (INIS)

Nakanoya, Takamitsu; Sasase, Masato; Yamamoto, Hiroyuki; Saito, Takeru; Hojou, Kiichi

2002-01-01

We have prepared the 'environmentally friendly' semiconductor, β-FeSi 2 thin films by ion beam sputter deposition method. The temperature of Si (100) substrate during the deposition and total amount of deposited Fe have been changed in order to find the optimum condition of the film formation. The crystallinity and surface morphology of the formed silicides were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. It is understood that the domain of the epitaxially grown β-FeSi 2 increases with the substrate temperature up to 700degC at the fixed amount of deposited Fe (33 nm) by XRD spectra. On the other hand, α-FeSi 2 is appeared and increased with the temperature above 700degC. Granulation of the surface is also observed by SEM images at this temperature region. At the fixed temperature condition (700degC), formation of α phase, which is obtained at the higher temperature compared with β phase, is observed for the fewer deposited samples. These results suggest the possibility of the epitaxially grown β-FeSi 2 formation at the lower (< 700degC) temperature region. (author)

Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

International Nuclear Information System (INIS)

Shinoda, Hiroyuki; Mutsukura, Nobuki

2005-01-01

Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

Ion-surface interaction: simulation of plasma-wall interaction (ITER)

International Nuclear Information System (INIS)

Salou, Pierre

2013-01-01

The wall materials of magnetic confinement in fusion machines are exposed to an aggressive environment; the reactor blanket is bombarded with a high flux of particles extracted from the plasma, leading to the sputtering of surface material. This sputtering causes wall erosion as well as plasma contamination problems. In order to control fusion reactions in complex reactors, it is thus imperative to well understand the plasma-wall interactions. This work proposes the study of the sputtering of fusion relevant materials. We propose to simulate the charged particles influx by few keV single-charged ion beams. This study is based on the catcher method; to avoid any problem of pollution (especially in the case of carbon) we designed a new setup allowing an in situ Auger electron spectroscopy analysis. The results provide the evolution of the angular distribution of the sputtering yield as a function of the ion mass (from helium to xenon) and its energy (from 3 keV to 9 keV). (author) [fr

Fluid simulation for two laser beams co-propagating in underdense plasma

International Nuclear Information System (INIS)

Mahdy, A.I.

2004-09-01

2D simulations code was constructed in order simulate the interactions of two co-propagating laser beams with underdense plasma. Simulations results at different laser intensities and separation-distances between the beams centroids were presented. In the results the effects of the laser intensities on the self-focusing and merging of the propagating beams were shown. In addition, the influence of increasing the separation-distance on the beams stability and trajectories were studied. A comparison with previous simulations at similar conditions was carried out in order to evaluate the numerical technique used to solve the basic equations. (author)

Injector and beam transport simulation study of proton dielectric wall accelerator

International Nuclear Information System (INIS)

Zhao, Quantang; Yuan, P.; Zhang, Z.M.; Cao, S.C; Shen, X.K.; Jing, Y.; Ma, Y.Y.; Yu, C.S.; Li, Z.P.; Liu, M.; Xiao, R.Q.; Zhao, H.W.

2012-01-01

A simulation study of a short-pulsed proton injector for, and beam transport in, a dielectric wall accelerator (DWA) has been carried out using the particle-in-cell (PIC) code Warp. It was shown that applying “tilt pulse” voltage waveforms on three electrodes enables the production of a shorter bunch by the injector. The fields in the DWA beam tube were simulated using Computer Simulation Technology’s Microwave Studio (CST MWS) package, with various choices for the boundary conditions. For acceleration in the DWA, the beam transport was simulated with Warp, using applied fields obtained by running CST MWS. Our simulations showed that the electric field at the entrance to the DWA represents a challenging issue for the beam transport. We thus simulated a configuration with a mesh at the entrance of the DWA, intended to improve the entrance field. In these latter simulations, a proton bunch was successfully accelerated from 130 keV to about 36 MeV in a DWA with a length of 36.75 cm. As the beam bunch progresses, its transverse dimensions diminish from (roughly) 0.5×0.5 cm to 0.2×0.4 cm. The beam pulse lengthens from 1 cm to 2 cm due to lack of longitudinal compression fields. -- Highlights: ► A pulse proton injector with tilt voltages on the three electrodes was simulated. ► The fields in different part of the DWA were simulated with CST and analyzed. ► The proton beam transport in DWA was simulated with Warp successfully. ► The simulation can help for designing a real DWA.

Kinetic and Potential Sputtering Enhancements of Lunar Regolith Erosion: The Contribution of the Heavy Multicharged (Minority) Solar Wind Constituents

Science.gov (United States)

Meyer, F. W.; Barghouty, A. F.

2012-01-01

We report preliminary results for H+, Ar+1, Ar+6 and Ar+9 ion sputtering of JSC-1A lunar regolith simulant at solar wind velocities, obtain ed at the ORNL Multicharged Ion Research Facility using quadrupole ma ss spectrometry. The multi-charged Ar ions were used as proxies for i ntermediate mass solar wind multicharged ions. Prior to the Ar beam e xposures, the sample was exposed to high fluence H+ irradiation to si mulate H-loading due to the dominant solar wind constituent. A x80 en hancement of oxygen sputtering by Ar+ over same velocity H+ was measu red and an additional x2 increase for Ar+9 over same velocity Ar+ was demonstrated, giving clear evidence of the importance of potential s puttering by multicharged ions. This enhancement was observed to pers ist to the maximum fluences investigated (approx 10(exp 16)/sq cm). As discussed in a companion abstract by N. Barghouty, such persistent s puttering enhancement has significant implications on weathering and aging of lunar regolith. In addition, XPS measurements showed strong evidence of Fe reduction for those target areas that had been exposed to high fluence Ar+ and Ar+8 beams. Preferential oxidation of the Fe -reduced beam-exposed regions during transfer to the XPS system led t o enhanced O concentrations in those regions as well. On the basis of these very promising preliminary results, a NASA-LASER project on mo re extensive measurements was recently selected for funding. The prop osal expands the collaboration with NASA-MSFC for the simulation effort, and adds a new collaboration with NASA-GSFC for lunar mission-rele vant measurements.

Monte Carlo simulation of beam characteristics from small fields based on TrueBeam flattening-filter-free mode

International Nuclear Information System (INIS)

Feng, Zhongsu; Yue, Haizhen; Zhang, Yibao; Wu, Hao; Cheng, Jinsheng; Su, Xu

2016-01-01

Through the Monte Carlo (MC) simulation of 6 and 10 MV flattening-filter-free (FFF) beams from Varian TrueBeam accelerator, this study aims to find the best incident electron distribution for further studying the small field characteristics of these beams. By incorporating the training materials of Varian on the geometry and material parameters of TrueBeam Linac head, the 6 and 10 MV FFF beams were modelled using the BEAMnrc and DOSXYZnrc codes, where the percentage depth doses (PDDs) and the off-axis ratios (OARs) curves of fields ranging from 4 × 4 to 40 × 40 cm 2 were simulated for both energies by adjusting the incident beam energy, radial intensity distribution and angular spread, respectively. The beam quality and relative output factor (ROF) were calculated. The simulations and measurements were compared using Gamma analysis method provided by Verisoft program (PTW, Freiburg, Germany), based on which the optimal MC model input parameters were selected and were further used to investigate the beam characteristics of small fields. The Full Width Half Maximum (FWHM), mono-energetic energy and angular spread of the resultant incident Gaussian radial intensity electron distribution were 0.75 mm, 6.1 MeV and 0.9° for the nominal 6 MV FFF beam, and 0.7 mm, 10.8 MeV and 0.3° for the nominal 10 MV FFF beam respectively. The simulation was mostly comparable to the measurement. Gamma criteria of 1 mm/1 % (local dose) can be met by all PDDs of fields larger than 1 × 1 cm 2 , and by all OARs of no larger than 20 × 20 cm 2 , otherwise criteria of 1 mm/2 % can be fulfilled. Our MC simulated ROFs agreed well with the measured ROFs of various field sizes (the discrepancies were less than 1 %), except for the 1 × 1 cm 2 field. The MC simulation agrees well with the measurement and the proposed model parameters can be clinically used for further dosimetric studies of 6 and 10 MV FFF beams

Simulating the Beam-line at CERN's ISOLDE Experiment

CERN Document Server

McGrath, Casey

2013-01-01

Maximizing the optical matching along portions of the ISOLDE beam-line and automating this procedure will make it easier for scientists to determine what the strengths of the electrical elds of each beam-line element should be in order to reduce particle loss. Simulations are run using a program called MAD-X, however, certain issues were discovered that hindered an immediate success of the simulations. Specifically, the transfer matrices for electrostatic components like the switchyards, kickers, and electric quadrupoles were missing from the original coding. The primary aim of this project was to design these components using AutoCAD and then extract the transfer matrices using SIMION. Future work will then implement these transfer matrices into the MAD-X code to make the simulations of the beam-line more accurate.

Simulation and track reconstruction for beam telescopes

CERN Document Server

Maqbool, Salman

2017-01-01

Beam telescopes are used for testing new detectors under development. Sensors are placed and a particle beam is passed through them. To test these novel detectors and determine their properties, the particle tracks need to be reconstructed from the known detectors in the telescope. Based on the reconstructed track, it’s predicted hits on the Device under Test (DUT) are compared with the actual hits on the DUT. Several methods exist for track reconstruction, but most of them don’t account for the effects of multiple scattering. General Broken Lines is one such algorithm which incorporates these effects during reconstruction. The aim of this project was to simulate the beam telescope and extend the track reconstruction framework for the FE-I4 telescope, which takes these effects into account. Section 1 introduces the problem, while section 2 focuses on beam telescopes. This is followed by the Allpix2 simulation framework in Section 3. And finally, Section 4 introduces the Proteus track reconstruction framew...

Simulation and Track Reconstruction for Beam Telescopes

CERN Document Server

Maqbool, Salman

2017-01-01

Beam telescopes are an important tool to test new detectors under development in a particle beam. To test these novel detectors and determine their properties, the particle tracks need to be reconstructed from the known detectors in the telescope. Based on the reconstructed track, its predicted position on the Device under Test (DUT) are compared with the actual hits on the DUT. Several methods exist for track reconstruction, but most of them do not account for the effects of multiple scattering. General Broken Lines is one such algorithm which incorporates these effects during reconstruction. The aim of this project was to simulate the beam telescope and extend the track reconstruction framework for the FE-I4 telescope, which takes these effects into account. Section 1 introduces the problem, while section 2 focuses on beam telescopes. This is followed by the Allpix2 simulation framework in Section 3. And finally, Section 4 introduces the Proteus track reconstruction framework along with the General Broken ...

Development of an ion-beam sputtering system for depositing thin films and multilayers of alloys and compounds

International Nuclear Information System (INIS)

Gupta, Mukul; Gupta, Ajay; Phase, D.M.; Chaudhari, S.M.; Dasannacharya, B.A.

2002-01-01

An ion-beam sputtering (IBS) system has been designed and developed for preparing thin films and multilayers of various elements, alloys and compounds. The ion source used is a 3 cm diameter, hot-cathode Kaufman type 1.5 kV ion source. The system has been successfully tested with the deposition of various materials, and the deposition parameters were optimised for achieving good quality of thin films and multilayers. A systematic illustration of the versatility of the system to produce a variety of structures is done by depositing thin film of pure iron, an alloy film of Fe-Zr, a compound thin film of FeN, a multilayer of Fe-Ag and an isotopic multilayer of 57 FeZr/FeZr. Microstructural measurements on these films using X-ray and neutron reflectivity, atomic force microscopy (AFM), and X-ray diffraction are presented and discussed to reveal the quality of the microstructures obtained with the system. It is found that in general, the surface roughnesses of the film deposited by IBS are significantly smaller as compared to those for films deposited by e-beam evaporation. Further, the grain size of the IBS crystalline films is significantly refined as compared to the films deposited by e-beam evaporation. Grain refinement may be one of the reasons for reduced surface roughness. In the case of amorphous films, the roughness of the films does not increase appreciably beyond that of the substrate even after depositing thicknesses of several hundred angstroms

Sputtered catalysts

International Nuclear Information System (INIS)

Tyerman, W.J.R.

1978-01-01

A method is described for preparing a supported catalyst by a sputtering process. A material that is catalytic, or which is a component of a catalytic system, is sputtered on to the surface of refractory oxide particles that are compatible with the sputtered material and the sputtered particles are consolidated into aggregate form. The oxide particles before sputtering should have a diameter in the range 1000A to 50μ and a porosity less than 0.4 ml/g, and may comprise MgO, Al 2 O 3 or SiO 2 or mixtures of these oxides, including hydraulic cement. The particles may possess catalytic activity by themselves or in combination with the catalytic material deposited on them. Sputtering may be effected epitaxially and consolidation may be effected by compaction pelleting, extrusion or spray drying of a slurry. Examples of the use of such catalysts are given. (U.K.)

Two Methods For Simulating the Strong-Strong Beam-Beam Interaction in Hadron Colliders

International Nuclear Information System (INIS)

Warnock, Robert L.

2002-01-01

We present and compare the method of weighted macro particle tracking and the Perron-Frobenius operator technique for simulating the time evolution of two beams coupled via the collective beam-beam interaction in 2-D and 4-D (transverse) phase space. The coherent dipole modes, with and without lattice nonlinearities and external excitation, are studied by means of the Vlasov-Poisson system

Energy dependence of angular distributions of sputtered particles by ion-beam bombardment at normal incidence

International Nuclear Information System (INIS)

Matsuda, Yoshinobu; Ueda, Yasutoshi; Uchino, Kiichiro; Muraoka, Katsunori; Maeda, Mitsuo; Akazaki, Masanori; Yamamura, Yasunori.

1986-01-01

The angular distributions of sputtered Fe-atoms were measured using the laser fluorescence technique during Ar-ion bombardment for energies of 0.6, 1, 2 and 3 keV at normal incidence. The measured cosine distribution at 0.6 keV progressively deviated to an over-cosine distribution at higher energies, and at 3 keV the angular distribution was an overcosine distribution of about 20 %. The experimental results agree qualitatively with calculations by a recent computer simulation code, ACAT. The results are explained by the competition between surface scattering and the effects of primary knock-on atoms, which tend to make the angular distributions over-cosine and under-cosine, respectively. (author)

Fundamental limits to imaging resolution for focused ion beams

International Nuclear Information System (INIS)

Orloff, J.; Swanson, L.W.; Utlaut, M.

1996-01-01

This article investigates the limitations on the formation of focused ion beam images from secondary electrons. We use the notion of the information content of an image to account for the effects of resolution, contrast, and signal-to-noise ratio and show that there is a competition between the rate at which small features are sputtered away by the primary beam and the rate of collection of secondary electrons. We find that for small features, sputtering is the limit to imaging resolution, and that for extended small features (e.g., layered structures), rearrangement, redeposition, and differential sputtering rates may limit the resolution in some cases. copyright 1996 American Vacuum Society

Simulations of longitudinal beam dynamics of space-charge dominated beams for heavy ion fusion

International Nuclear Information System (INIS)

Miller, D.A.C.

1994-12-01

The longitudinal instability has potentially disastrous effects on the ion beams used for heavy ion driven inertial confinement fusion. This instability is a open-quotes resistive wallclose quotes instability with the impedance coining from the induction modules in the accelerator used as a driver. This instability can greatly amplify perturbations launched from the beam head and can prevent focusing of the beam onto the small spot necessary for fusion. This instability has been studied using the WARPrz particle-in-cell code. WARPrz is a 2 1/2 dimensional electrostatic axisymmetric code. This code includes a model for the impedance of the induction modules. Simulations with resistances similar to that expected in a driver show moderate amounts of growth from the instability as a perturbation travels from beam head to tail as predicted by cold beam fluid theory. The perturbation reflects off the beam tail and decays as it travels toward the beam head. Nonlinear effects cause the perturbation to steepen during reflection. Including the capacitive component of the, module impedance. has a partially stabilizing effect on the longitudinal instability. This reduction in the growth rate is seen in both cold beam fluid theory and in simulations with WARPrz. Instability growth rates for warm beams measured from WARPrz are lower than cold beam fluid theory predicts. Longitudinal thermal spread cannot account for this decrease in the growth rate. A mechanism for coupling the transverse thermal spread to decay of the longitudinal waves is presented. The longitudinal instability is no longer a threat to the heavy ion fusion program. The simulations in this thesis have shown that the growth rate for this instability will not be as large as earlier calculations predicted

Improvement of the homogeneity of high mobility In{sub 2}O{sub 3}:H films by sputtering through a mesh electrode studied by Monte Carlo simulation and thin film analysis

Energy Technology Data Exchange (ETDEWEB)

Scherg-Kurmes, Harald; Hafez, Ahmad; Szyszka, Bernd [Technische Universitaet Berlin, Einsteinufer 25, 10587, Berlin (Germany); Siemers, Michael; Pflug, Andreas [Fraunhofer IST, Bienroder Weg 54E, 38108, Braunschweig (Germany); Schlatmann, Rutger [Helmholtz Zentrum Berlin, PVcomB, Schwarzschildstr. 3, 12489, Berlin (Germany); Rech, Bernd [Helmholtz Zentrum Berlin, Institute for Silicon Photovoltaics, Kekulestrasse 5, 12489, Berlin (Germany)

2016-09-15

Hydrogen-doped indium oxide (IOH) is a transparent conductive oxide offering great potential to optoelectronic applications because of its high mobility of over 100 cm{sup 2} V{sup -1}s{sup -1}. In films deposited statically by RF magnetron sputtering, a small area directly opposing the target center with a higher resistivity and lower crystallinity than the rest of the film has been found via hall- and XRD-measurements, which we attribute to plasma damage. In order to investigate the distribution of particle energies during the sputtering process we have simulated the RF-sputtering deposition process of IOH by particle-in-cell Monte Carlo (PICMC) simulation. At the surface of ceramic sputtering targets, negatively charged oxygen ions are created. These ions are accelerated toward the substrate in the plasma sheath with energies up to 150 eV. They damage the growing film and reduce its crystallinity. The influence of a negatively biased mesh inside the sputtering chamber on particle energies and distributions has been simulated and investigated. We found that the mesh decreased the high-energetic oxygen ion density at the substrate, thus enabling a more homogeneous IOH film growth. The theoretical results have been verified by XRD X-ray diffractometry (XRD), 4-point probe, and hall measurements of statically deposited IOH films on glass. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Parallel Beam-Beam Simulation Incorporating Multiple Bunches and Multiple Interaction Regions

CERN Document Server

Jones, F W; Pieloni, T

2007-01-01

The simulation code COMBI has been developed to enable the study of coherent beam-beam effects in the full collision scenario of the LHC, with multiple bunches interacting at multiple crossing points over many turns. The program structure and input are conceived in a general way which allows arbitrary numbers and placements of bunches and interaction points (IP's), together with procedural options for head-on and parasitic collisions (in the strong-strong sense), beam transport, statistics gathering, harmonic analysis, and periodic output of simulation data. The scale of this problem, once we go beyond the simplest case of a pair of bunches interacting once per turn, quickly escalates into the parallel computing arena, and herein we will describe the construction of an MPI-based version of COMBI able to utilize arbitrary numbers of processors to support efficient calculation of multi-bunch multi-IP interactions and transport. Implementing the parallel version did not require extensive disruption of the basic ...

Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

International Nuclear Information System (INIS)

Courreges, F.G.; Fahrenbruch, A.L.; Bube, R.H.

1980-01-01

The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions. In addition, surface properties of CdTe related to the sputtering process were investigated as a function of sputter etching and thermal oxidation using the techniques of surface photovoltage and photoluminescence. ITO/CdTe cells prepared by this sputtering method consist of an n + -ITO/n-CdTe/p-CdTe buried homojunction with about a 1-μm-thick n-type CdTe layer formed by heating of the surface of the CdTe during sputtering. Solar efficiencies up to 8% have been observed with V/sub 0c/=0.82 V and J/sub s/c=14.5 mA/cm 2 . The chief degradation mechanism involves a decrease in V/sub 0c/ with a transformation of the buried homojunction structure to an actual ITO/CdTe heterojunction

Study of magnetic properties and relaxation in amorphous Fe73.9Nb3.1Cu0.9Si13.2B8.9 thin films produced by ion beam sputtering

International Nuclear Information System (INIS)

Celegato, F.; Coiesson, M.; Magni, A.; Tiberto, P.; Vinai, F.; Kane, S. N.; Modak, S. S.; Gupta, A.; Sharma, P.

2007-01-01

Amorphous Fe 73.9 Nb 3.1 Cu 0.9 Si 13.2 B 8.9 thin films have been produced by ion beam sputtering with two different beam energies (500 and 1000 eV). Magnetic measurements indicate that the samples display a uniaxial magnetic anisotropy, especially for samples prepared with the lower beam energy. Magnetization relaxation has been measured on both films with an alternating gradient force magnetometer and magneto-optical Kerr effect. Magnetization relaxation occurs on time scales of tens of seconds and can be described with a single stretched exponential function. Relaxation intensity turns out to be higher when measured along the easy magnetization axis

Ion beam analysis, corrosion resistance and nanomechanical properties of TiAlCN/CN{sub x} multilayer grown by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Alemón, B.; Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Canto, C. [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, Mexico, DF 04510 (Mexico); Andrade, E., E-mail: andrade@fisica.unam.mx [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, Mexico, DF 04510 (Mexico); Lucio, O.G. de [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, Mexico, DF 04510 (Mexico); Rocha, M.F. [ESIME-Z, Instituto Politécnico Nacional, ALM Zacatenco, Mexico, DF 07738 (Mexico); Broitman, E. [Thin Films Physics Division, IFM, Linköping University, SE-58183 Linköping (Sweden)

2014-07-15

A novel TiAlCN/CN{sub x} multilayer coating, consisting of nine TiAlCN/CN{sub x} periods with a top layer 0.5 μm of CN{sub x}, was designed to enhance the corrosion resistance of CoCrMo biomedical alloy. The multilayers were deposited by dc and RF reactive magnetron sputtering from Ti{sub 0.5}Al{sub 0.5} and C targets respectively in a N{sub 2}/Ar plasma. The corrosion resistance and mechanical properties of the multilayer coatings were analyzed and compared to CoCrMo bulk alloy. Ion beam analysis (IBA) and X-ray diffraction tests were used to measure the element composition profiles and crystalline structure of the films. Corrosion resistance was evaluated by means of potentiodynamic polarization measurements using simulated body fluid (SBF) at typical body temperature and the nanomechanical properties of the multilayer evaluated by nanoindentation tests were analyzed and compared to CoCrMo bulk alloy. It was found that the multilayer hardness and the elastic recovery are higher than the substrate of CoCrMo. Furthermore the coated substrate shows a better general corrosion resistance than that of the CoCrMo alloy alone with no observation of pitting corrosion.

Numerical Simulation of Beam-Beam Effects in the Proposed Electron-Ion Colider at Jefferson Lab

International Nuclear Information System (INIS)

Terzic, Balsa; Zhang, Yuhong

2010-01-01

One key limiting factor to a collider luminosity is beam-beam interactions which usually can cause serious emittance growth of colliding beams and fast reduction of luminosity. Such nonlinear collective beam effect can be a very serious design challenge when the machine parameters are pushed into a new regime. In this paper, we present simulation studies of the beam-beam effect for a medium energy ring-ring electron-ion collider based on CEBAF.

Practice-oriented optical thin film growth simulation via multiple scale approach

Energy Technology Data Exchange (ETDEWEB)

Turowski, Marcus, E-mail: m.turowski@lzh.de [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); Jupé, Marco [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Melzig, Thomas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Moskovkin, Pavel [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Daniel, Alain [Centre for Research in Metallurgy, CRM, 21 Avenue du bois Saint Jean, Liège 4000 (Belgium); Pflug, Andreas [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54e, Braunschweig 30108 (Germany); Lucas, Stéphane [Research Centre for Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), 61 rue de Bruxelles, Namur 5000 (Belgium); Ristau, Detlev [Laser Zentrum Hannover e.V., Hollerithallee 8, Hannover 30419 (Germany); QUEST: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany)

2015-10-01

Simulation of the coating process is a very promising approach for the understanding of thin film formation. Nevertheless, this complex matter cannot be covered by a single simulation technique. To consider all mechanisms and processes influencing the optical properties of the growing thin films, various common theoretical methods have been combined to a multi-scale model approach. The simulation techniques have been selected in order to describe all processes in the coating chamber, especially the various mechanisms of thin film growth, and to enable the analysis of the resulting structural as well as optical and electronic layer properties. All methods are merged with adapted communication interfaces to achieve optimum compatibility of the different approaches and to generate physically meaningful results. The present contribution offers an approach for the full simulation of an Ion Beam Sputtering (IBS) coating process combining direct simulation Monte Carlo, classical molecular dynamics, kinetic Monte Carlo, and density functional theory. The simulation is performed exemplary for an existing IBS-coating plant to achieve a validation of the developed multi-scale approach. Finally, the modeled results are compared to experimental data. - Highlights: • A model approach for simulating an Ion Beam Sputtering (IBS) process is presented. • In order to combine the different techniques, optimized interfaces are developed. • The transport of atomic species in the coating chamber is calculated. • We modeled structural and optical film properties based on simulated IBS parameter. • The modeled and the experimental refractive index data fit very well.

Bench-marking beam-beam simulations using coherent quadrupole effects

International Nuclear Information System (INIS)

Krishnagopal, S.; Chin, Y.H.

1992-06-01

Computer simulations are used extensively in the study of the beam-beam interaction. The proliferation of such codes raises the important question of their reliability, and motivates the development of a dependable set of bench-marks. We argue that rather than detailed quantitative comparisons, the ability of different codes to predict the same qualitative physics should be used as a criterion for such bench-marks. We use the striking phenomenon of coherent quadrupole oscillations as one such bench-mark, and demonstrate that our codes do indeed observe this behaviour. We also suggest some other tests that could be used as bench-marks

Bench-marking beam-beam simulations using coherent quadrupole effects

International Nuclear Information System (INIS)

Krishnagopal, S.; Chin, Y.H.

1992-01-01

Computer simulations are used extensively in the study of the beam-beam interaction. The proliferation of such codes raises the important question of their reliability, and motivates the development of a dependable set of bench-marks. We argue that rather than detailed quantitative comparisons, the ability of different codes to predict the same qualitative physics should be used as a criterion for such bench-marks. We use the striking phenomenon of coherent quadrupole oscillations as one such bench-mark, and demonstrate that our codes do indeed observe this behavior. We also suggest some other tests that could be used as bench-marks

Beam dynamics simulation in the X-ray Compton source

International Nuclear Information System (INIS)

Gladkikh, P.; Karnaukhov, I.; Telegin, Yu.; Shcherbakov, A.; Zelinsky, A.

2002-01-01

At the National Science Center 'Kharkov Institute of Physics and Technology' the X-ray source based on Compton scattering has been developed. The computer code for simulation of electron beam dynamics with taking into account the Compton scattering effect based on Monte Carlo method is described in this report. The first results of computer simulation of beam dynamics with electron-photon interaction, parameters of electron and photon beams are presented. Calculations were carried out with the lattice of synchrotron light source SRS-800 Ukrainian Synchrotron Center

Beam dynamics simulation in the X-ray Compton source

CERN Document Server

Gladkikh, P; Telegin, Yu P; Shcherbakov, A; Zelinsky, A

2002-01-01

At the National Science Center 'Kharkov Institute of Physics and Technology' the X-ray source based on Compton scattering has been developed. The computer code for simulation of electron beam dynamics with taking into account the Compton scattering effect based on Monte Carlo method is described in this report. The first results of computer simulation of beam dynamics with electron-photon interaction, parameters of electron and photon beams are presented. Calculations were carried out with the lattice of synchrotron light source SRS-800 Ukrainian Synchrotron Center.

Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

Science.gov (United States)

Barghouty, Abdulmasser F.; Adams, James H., Jr.

2008-01-01

At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

Parallel beam dynamics simulation of linear accelerators

International Nuclear Information System (INIS)

Qiang, Ji; Ryne, Robert D.

2002-01-01

In this paper we describe parallel particle-in-cell methods for the large scale simulation of beam dynamics in linear accelerators. These techniques have been implemented in the IMPACT (Integrated Map and Particle Accelerator Tracking) code. IMPACT is being used to study the behavior of intense charged particle beams and as a tool for the design of next-generation linear accelerators. As examples, we present applications of the code to the study of emittance exchange in high intensity beams and to the study of beam transport in a proposed accelerator for the development of accelerator-driven waste transmutation technologies

Effects of deposition and post-annealing conditions on electrical properties and thermal stability of TiAlN films by ion beam sputter deposition

International Nuclear Information System (INIS)

Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

2006-01-01

TiAlN films were deposited by ion beam sputter deposition (IBSD) using a Ti-Al (90/10) alloy target in a nitrogen atmosphere on thermal oxidized Si wafers. Effects of ion beam voltage, substrate temperature (T s ) and post-annealing conditions on electrical properties and oxidation resistance of TiAlN films were studied. According to the experimental results, the proper kinetic energy provided good crystallinity and a dense structure of the films. Because of their better crystallinity and predomination of (200) planes, TiAlN films deposited with 900 V at low T s (50 deg. C) have shown lower resistivity than those at high T s (250 deg. C). They also showed better oxidation resistance. If the beam voltage was too high, it caused some damage to the film surfaces, which caused poor oxidation resistance of films. When sufficient kinetic energy was provided by the beam voltage, the mobility of adatoms was too high due to their extra thermal energy, thus reducing the crystallinity and structure density of the films. A beam voltage of 900 V and a substrate temperature of 50 deg. C were the optimum deposition conditions used in this research. They provided good oxidation resistance and low electrical resistivity for IBSD TiAlN films

Depth of origin of atoms sputtered from crystalline targets

International Nuclear Information System (INIS)

Shapiro, M.H.; Trovato, E.; Tombrello, T.A.

2001-01-01

Recently, V.I. Shulga and W. Eckstein (Nucl. Instr. and Meth. B 145 (1998) 492) investigated the depth of origin of atoms sputtered from random elemental targets using the Monte Carlo code TRIM.SP and the lattice code OKSANA. They found that the mean depth of origin is proportional to N -0.86 , where N is the atomic density; and that the most probable escape depth is ∼λ 0 /2, where λ 0 is the mean atomic distance. Since earlier molecular dynamics simulations with small crystalline elemental targets typically produced a most probable escape depth of zero (i.e., most sputtered atoms came from the topmost layer of the target), we have carried out new molecular dynamics simulations of sputtered atom escape depths with much larger crystalline targets. Our new results, which include the bcc targets Cs, Rb and W, as well as the fcc targets Cu and Au predict that the majority of sputtered atoms come from the first atomic layer for the bcc(1 0 0), bcc(1 1 1), fcc(1 0 0) and fcc(1 1 1) targets studied. For the high-atomic density targets Cu, Au and W, the mean depth of origin of sputtered atoms typically is less than 0.25λ 0 . For the low-atomic density targets Cs and Rb, the mean depth of origin of sputtered atoms is considerably larger, and depends strongly on the crystal orientation. We show that the discrepancy between the single-crystal and amorphous target depth of origin values can be resolved by applying a simple correction to the single-crystal results

Developments in broad-beam, ion-source technology and applications

International Nuclear Information System (INIS)

Kaufman, H.R.; Harper, J.M.E.; Cuomo, J.J.

1982-01-01

Recent advances in broad-beam, ion-source technology are summarized, including low-energy ion optics, improved extraction grid fabrication, a compact ion-source design and a gridless ion-source design. Recent applications have emphasized concepts such as stress modification of vapor deposited films, very low energy ion beams to minimize the physical sputtering portion in reactive etching, and the use of multiple sources and targets to sputter deposit alloys and compounds. A comprehensive critical review by the same authors appears concurrently, describing in detail the developments in broad-beam, ion-source technology 1 and the applications of these sources. 2

Carbonaceous Particles Production in a Sputtering Discharge

International Nuclear Information System (INIS)

Dominique, Claire; Sant, Marco; Arnas, Cecile

2005-01-01

Spherical dust particles have been produced in argon glow discharge by sputtering of a graphite cathode. Their size varies from 40 to 200 nm depending on the distance between the two electrodes and the largest ones have a cauliflower shape. Simulations giving the evolution of the energy distribution of sputtered carbon atoms suggest a mechanism of growth by carbon vapour condensation. The chemical composition and structure of particles have been investigated by infrared spectroscopy and appear to be a complex arrangement of the carbon atoms and hetero-atoms

Optimisation of electron beam characteristics by simulated annealing

International Nuclear Information System (INIS)

Ebert, M.A.; University of Adelaide, SA; Hoban, P.W.

1996-01-01

Full text: With the development of technology in the field of treatment beam delivery, the possibility of tailoring radiation beams (via manipulation of the beam's phase space) is foreseeable. This investigation involved evaluating a method for determining the characteristics of pure electron beams which provided dose distributions that best approximated desired distributions. The aim is to determine which degrees of freedom are advantageous and worth pursuing in a clinical setting. A simulated annealing routine was developed to determine optimum electron beam characteristics. A set of beam elements are defined at the surface of a homogeneous water equivalent phantom defining discrete positions and angles of incidence, and electron energies. The optimal weighting of these elements is determined by the (generally approximate) solution to the linear equation, Dw = d, where d represents the dose distribution calculated over the phantom, w the vector of (50 - 2x10 4 ) beam element relative weights, and D a normalised matrix of dose deposition kernels. In the iterative annealing procedure, beam elements are randomly selected and beam weighting distributions are sampled and used to perturb the selected elements. Perturbations are accepted or rejected according to standard simulated annealing criteria. The result (after the algorithm has terminated due to meeting an iteration or optimisation specification) is an approximate solution for the beam weight vector (w) specified by the above equation. This technique has been applied for several sample dose distributions and phase space restrictions. An example is given of the phase space obtained when endeavouring to conform to a rectangular 100% dose region with polyenergetic though normally incident electrons. For regular distributions, intuitive conclusions regarding the benefits of energy/angular manipulation may be made, whereas for complex distributions, variations in intensity over beam elements of varying energy and

Secondary ion formation during electronic and nuclear sputtering of germanium

Science.gov (United States)

Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

2018-06-01

Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

Science.gov (United States)

Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

2013-09-01

Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

Effect of heat treatment on properties of HfO2 film deposited by ion-beam sputtering

Science.gov (United States)

Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Li, Shida; Yang, Xiao; Jiang, Chenghui; Liu, Dandan; Ji, Yiqin; Zhang, Feng; Chen, Deying

2017-11-01

The effects of atmosphere heat treatment on optical, stress, and microstructure properties of an HfO2 film deposited by ion-beam sputtering were systematically researched. The relationships among annealing temperature and refractive index, extinction coefficient, physical thickness, forbidden-band width, tape trailer width, Urbach energy, crystal phase structure, and stress were assessed. The results showed that 400 °C is the transformation point, and the microstructure of the HfO2 film changed from an amorphous into mixed-phase structure. Multistage phonons appeared on the HfO2 film, and the trends of the refractive index, extinction coefficient, forbidden-band width change, and Urbach energy shifted from decrease to increase. With the elevation of the annealing temperature, the film thickness increased monotonously, the compressive stress gradually turned to tensile stress, and the transformation temperature point for the stress was between 200 °C and 300 °C. Therefore, the change in the stress is the primary cause for the shifts in thin-film thickness.

Beam dynamics simulation in the X-ray Compton source

Energy Technology Data Exchange (ETDEWEB)

Gladkikh, P.; Karnaukhov, I.; Telegin, Yu.; Shcherbakov, A. E-mail: shcherbakov@kipt.kharkov.ua; Zelinsky, A

2002-05-01

At the National Science Center 'Kharkov Institute of Physics and Technology' the X-ray source based on Compton scattering has been developed. The computer code for simulation of electron beam dynamics with taking into account the Compton scattering effect based on Monte Carlo method is described in this report. The first results of computer simulation of beam dynamics with electron-photon interaction, parameters of electron and photon beams are presented. Calculations were carried out with the lattice of synchrotron light source SRS-800 Ukrainian Synchrotron Center.

Isotope puzzle in sputtering

International Nuclear Information System (INIS)

Zheng Liping

1998-01-01

Mechanisms affecting multicomponent material sputtering are complex. Isotope sputtering is the simplest in the multicomponent materials sputtering. Although only mass effect plays a dominant role in the isotope sputtering, there is still an isotope puzzle in sputtering by ion bombardment. The major arguments are as follows: (1) At the zero fluence, is the isotope enrichment ejection-angle-independent or ejection-angle-dependent? (2) Is the isotope angular effect the primary or the secondary sputter effect? (3) How to understand the action of momentum asymmetry in collision cascade on the isotope sputtering?

Cyclotron beam dynamic simulations in MATLAB

International Nuclear Information System (INIS)

Karamysheva, G.A.; Karamyshev, O.V.; Lepkina, O.E.

2008-01-01

MATLAB is useful for beam dynamic simulations in cyclotrons. Programming in an easy-to-use environment permits creation of models in a short space of time. Advanced graphical tools of MATLAB give good visualization features to created models. The beam dynamic modeling results with an example of two different cyclotron designs are presented. Programming with MATLAB opens wide possibilities of the development of the complex program, able to perform complete block of calculations for the design of the accelerators

Sputtering of carbon using hydrogen ion beams with energies of 60–800 eV

Energy Technology Data Exchange (ETDEWEB)

Sidorov, Dmitry S., E-mail: dmitrisidoroff@rambler.ru [Nizhny Novgorod State University, 23 Gagarina Avenue, Nizhny Novgorod, Nizhny Novgorod Region 603950 (Russian Federation); Chkhalo, Nikolay I., E-mail: chkhalo@ipm.sci-nnov.ru [Institute for Physics of Microstructures RAS, Academicheskaya Str. 7, Afonino, Nizhny Novgorod Region, Kstovsky District, Kstovo Region 603087 (Russian Federation); Mikhailenko, Mikhail S.; Pestov, Alexey E.; Polkovnikov, Vladimir N. [Institute for Physics of Microstructures RAS, Academicheskaya Str. 7, Afonino, Nizhny Novgorod Region, Kstovsky District, Kstovo Region 603087 (Russian Federation)

2016-11-15

This article presents the result of a study on the sputtering of carbon films by low-energy hydrogen ions. In particular, the etching rate and surface roughness were measured. The range of energies where the sputtering switches from pure chemical to a combination of chemical and physical mechanisms was determined. It is shown that Sigmund’s theory for ion etching does not work well for fields of energy less than 150 eV and that it accurately describes the dependence of a sputtering coefficient on ion energy for energies greater than 300 eV. A strong smoothing effect for the surface of carbon film was also found. This result is interesting in itself and for its significance for the manufacture of super-smooth surfaces for X-ray applications.

Irradiation Effects on RIA Fragmentation Cu Beam Dump

CERN Document Server

Reyes, Susana; Boles, Jason; Stein, Werner; Wirth, Brian

2005-01-01

Within the scope of conceptual R&D activities in support of the Rare-Isotope Accelerator (RIA) facility, high priority is given to the development of high-power fragmentation beam dumps. A pre-study was made of a static water-cooled Cu beam dump that can meet requirements for a 400 MeV/u uranium beam. The issue of beam sputtering was addressed and found to be not a significant issue. Preliminary radiation transport simulations show significant damage (dpa) in the vicinity of the Bragg peak of uranium ions. Experimental data show that defects in Cu following neutron or high-energy particle irradiation tend to saturate at doses between 1 and 5 dpa, and this saturation in defect density also results in saturation of mechanical property degradation. However, effects of swift heavy ion irradiation and the production of gaseous and solid transmutant elements still need to be addressed. Initial calculations indicate that He concentrations on the order of 100 appm are produced in the beam dump after several weeks...

Simulations of Large-Area Electron Beam Diodes

Science.gov (United States)

Swanekamp, S. B.; Friedman, M.; Ludeking, L.; Smithe, D.; Obenschain, S. P.

1999-11-01

Large area electron beam diodes are typically used to pump the amplifiers of KrF lasers. Simulations of large-area electron beam diodes using the particle-in-cell code MAGIC3D have shown the electron flow in the diode to be unstable. Since this instability can potentially produce a non-uniform current and energy distribution in the hibachi structure and lasing medium it can be detrimental to laser efficiency. These results are similar to simulations performed using the ISIS code.(M.E. Jones and V.A. Thomas, Proceedings of the 8^th) International Conference on High-Power Particle Beams, 665 (1990). We have identified the instability as the so called ``transit-time" instability(C.K. Birdsall and W.B. Bridges, Electrodynamics of Diode Regions), (Academic Press, New York, 1966).^,(T.M. Antonsen, W.H. Miner, E. Ott, and A.T. Drobot, Phys. Fluids 27), 1257 (1984). and have investigated the role of the applied magnetic field and diode geometry. Experiments are underway to characterize the instability on the Nike KrF laser system and will be compared to simulation. Also some possible ways to mitigate the instability will be presented.

Simulating Transient Effects of Pulsed Beams on Beam Intercepting Devices

CERN Document Server

Richter, Herta; Noah Messomo, Etam

2011-01-01

The development in the physics community towards higher beam power through the possibilities of particle accelerators lead to challenges for the developers of elements which are exposed to effect of particle beams (beam intercepting devices = BIDs). For the design of BIDs, the increasing heat load onto these devices due to energetic and focused beams and - in most cases - their highly pulsed nature has to be taken into account. The physics requirements are sometimes opposed to the current state of the art. As one possibility of many in combining the different aspects for these ambitious demands, two highly developed computer programs, namely FLUKA and ANSYS AUTODYN, were joined for this dissertation. The former is a widely enhanced Monte-Carlo-code which specializes on the interaction of particles with static matter, while the latter is a versatile explicit code for the simulation of highly dynamic processes. Both computer programs were developed intensively over years and are still continuously enhanced in o...

Full simulation of the beam-related backgrounds at the ILC

Energy Technology Data Exchange (ETDEWEB)

Schuetz, Anne [DESY (Germany); KIT (Germany)

2016-07-01

The ILC has been proposed as the next machine at the energy frontier and a Technical Design Report was presented in 2012. As part of the site-specific studies to prepare the hosting of the ILC in Japan, the final focus region of the ILC had to be adapted. In this contribution, updated results for the beam-related background as well as new results for the backgrounds originating from the beam dump are presented. The beam-related backgrounds are simulated using GuineaPig and are then propagated through the full simulation of the SiD detector. The impact of various modifications in the final-focus region on the detector occupancies are then evaluated. For the neutron background from the beam dump, the FLUKA simulation suite is used, which is well established for dosimetry and shielding studies. With this program, the effect of the neutrons from the ILC beam dumps on the ILC detectors are studied.

Simulation studies of macroparticles falling into the LHC Proton Beam

CERN Document Server

Fuster Martinez, N; Zimmermann, F; Baer, T; Giovannozzi, M; Holzer, E B; Nebot Del Busto, E; Nordt, A; Sapinski, M; Yang, Z

2011-01-01

We report updated simulations on the interaction of macroparticles falling from the top of the vacuum chamber into the circulating LHC proton beam. The path and charge state of micron size micro-particles are computed together with the resulting beam losses, which — if high enough — can lead to the local quench of superconducting (SC) magnets. The simulated time evolution of the beam loss is compared with observations in order to constrain some macroparticle parameters. We also discuss the possibility of a “multiple crossing” by the same macroparticle, the effect of a strong dipole field, and the dependence of peak loss rate and loss duration on beam current and on beam size.

Giant metal sputtering yields induced by 20-5000 keV/atom gold clusters

International Nuclear Information System (INIS)

Andersen, H.H.; Brunelle, A.; Della-Negra, S.; Depauw, J.; Jacquet, D.; Le Beyec, Y.

1997-01-01

Very large non-linear effects have been found in cluster-induced metal sputtering over a broad projectile energy interval for the first time. Recently available cluster beams from tandem accelerators have allowed sputtering yield measurements to be made with Au 1 to Au 5 from 20 keV/atom to 5 MeV/atom. The cluster-sputtering yield maxima were found at the same total energy but not at the same energy/atom as expected. For Au 5 a yield as high as 3000 was reached at 150 keV/atom while the Au 1 yield was only 55 at the same velocity. The Sigmund-Claussen thermal spike theory, which fits published data at low energy, cannot reproduce our extended new data set. (author)

Dual beam organic depth profiling using large argon cluster ion beams

Science.gov (United States)

Holzweber, M; Shard, AG; Jungnickel, H; Luch, A; Unger, WES

2014-01-01

Argon cluster sputtering of an organic multilayer reference material consisting of two organic components, 4,4′-bis[N-(1-naphthyl-1-)-N-phenyl- amino]-biphenyl (NPB) and aluminium tris-(8-hydroxyquinolate) (Alq3), materials commonly used in organic light-emitting diodes industry, was carried out using time-of-flight SIMS in dual beam mode. The sample used in this study consists of a ∽400-nm-thick NPB matrix with 3-nm marker layers of Alq3 at depth of ∽50, 100, 200 and 300 nm. Argon cluster sputtering provides a constant sputter yield throughout the depth profiles, and the sputter yield volumes and depth resolution are presented for Ar-cluster sizes of 630, 820, 1000, 1250 and 1660 atoms at a kinetic energy of 2.5 keV. The effect of cluster size in this material and over this range is shown to be negligible. © 2014 The Authors. Surface and Interface Analysis published by John Wiley & Sons Ltd. PMID:25892830

Study of the ion sputter-machining, 1

International Nuclear Information System (INIS)

Miyamoto, Iwao; Taniguchi, Norio

1979-01-01

A lattice disordering of the surface of single crystal silicon due to ion bombardment of Ar + was investigated by the high energy electron diffraction method, with the incident angle of 1.7 0 and 2.8 0 . By this measuring system, the degree of disorders of the sputter-machined surface layer of Si single crystal in the depth of 50 A and 30 A has been determined, under the working conditions of the ion energy ranging from 0.2 keV to 1.5 keV and the incident angle of ion ranging from 0 0 to 75 0 . Moreover, the recovery of lattice disorder of sputter-machined surface layer of Si single crystal by means of the isochronal thermal annealing has been also confirmed by the same method. From the above experiments, the following conclusions are obtained. (1) The layers of sputter-machined surface of Si single crystal workpiece are highly disordered like amorphous, under the working conditions of ion energy ranging from 0.2 keV to 1.5 keV for the vertical ion incident angle. (2) Under the working conditions of ion incident angle larger than 60 0 , using the ion beam with a lower energy under 300 eV, the surface of the workpiece is not disordered. Therefore, a sputter-machined surface of Si single crystal with highly ordered structure can be obtained under this working condition. (3) The recovery of disorder of sputter-machined surface is completed by the heat-treatment of workpiece under isochronal annealing for 1 hour at 800 0 C. However, it is not clear whether this recovery of lattice point or the dispersion of interstitially located argon atoms from the surface to the outside. (author)

Simulation of integrated beam experiment designs

International Nuclear Information System (INIS)

Grote, D.P.; Sharp, W.M.

2004-01-01

Simulation of designs of an Integrated Beam Experiment (IBX) class accelerator have been carried out. These simulations are an important tool for validating such designs. Issues such as envelope mismatch and emittance growth can be examined in a self-consistent manner, including the details of injection, accelerator transitions, long-term transport, and longitudinal compression. The simulations are three-dimensional and time-dependent, and begin at the source. They continue up through the end of the acceleration region, at which point the data is passed on to a separate simulation of the drift compression. Results are be presented

DART: A simulation code for charged particle beams

International Nuclear Information System (INIS)

White, R.C.; Barr, W.L.; Moir, R.W.

1989-01-01

This paper presents a recently modified version of the 2-D code, DART, which can simulate the behavior of a beam of charged particles whose trajectories are determined by electric and magnetic fields. This code was originally used to design laboratory-scale and full-scale beam direct converters. Since then, its utility has been expanded to allow more general applications. The simulation includes space charge, secondary electrons, and the ionization of neutral gas. A beam can contain up to nine superimposed beamlets of different energy and species. The calculation of energy conversion efficiency and the method of specifying the electrode geometry are described. Basic procedures for using the code are given, and sample input and output fields are shown. 7 refs., 18 figs

Combined sputtering yield and surface topography development studies on Si

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

1981-01-01

The sputtering yield-incidence angle function has been measured for 8 keV Ar + ions incident on Si by direct scanning electron microscope observation of the depths of sputtered craters on substrate boundaries. This function displays a maximum sputtering yield at an angle thetasub(p) approximately equal to 40 0 to the surface normal. The sequential ion fluence dependence of features developed beneath local surface contaminant was then studied, quasi dynamically, in the same on-line ion source-S.E.M. system. During erosion of the contaminant a steeply elevated pillar of Si forms, which then transforms to a cone, again of high elevation angle >>thetasub(p). This cone is gradually eroded into the surrounding surface with no special significance associated with orientations of angle thetasub(p). Pedal depressions surrounding the pillar-cone system are also noted. The reasons for these observations and their relevance to ion beam surface channel etching are discussed. (Auth.)

Solar system sputtering

Science.gov (United States)

Tombrello, T. A.

1982-01-01

The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

Mechanisms of material removal and mass transport in focused ion beam nanopore formation

Energy Technology Data Exchange (ETDEWEB)

Das, Kallol, E-mail: das7@illinois.edu; Johnson, Harley T., E-mail: htj@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, MC-244, Urbana, Illinois 61801 (United States); Freund, Jonathan B., E-mail: jbfreund@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, MC-244, Urbana, Illinois 61801 (United States); Department of Aerospace Engineering, University of Illinois at Urbana-Champaign, 306 Talbot Laboratory, MC-236, 104 South Wright Street Urbana, Illinois 61801 (United States)

2015-02-28

Despite the widespread use of focused ion beam (FIB) processing as a material removal method for applications ranging from electron microscope sample preparation to nanopore processing for DNA sequencing, the basic material removal mechanisms of FIB processing are not well understood. We present the first complete atomistic simulation of high-flux FIB using large-scale parallel molecular dynamics (MD) simulations of nanopore fabrication in freestanding thin films. We focus on the root mechanisms of material removal and rearrangement and describe the role of explosive boiling in forming nanopores. FIB nanopore fabrication is typically understood to occur via sputter erosion. This can be shown to be the case in low flux systems, where individual ion impacts are sufficiently separated in time that they may be considered as independent events. But our detailed MD simulations show that in high flux FIB processing, above a threshold level at which thermal effects become significant, the primary mechanism of material removal changes to a significantly accelerated, thermally dominated process. Under these conditions, the target is heated by the ion beam faster than heat is conducted away by the material, leading quickly to melting, and then continued heating to nearly the material critical temperature. This leads to explosive boiling of the target material with spontaneous bubble formation and coalescence. Mass is rapidly rearranged at the atomistic scale, and material removal occurs orders of magnitude faster than would occur by simple sputtering. While the phenomenology is demonstrated computationally in silicon, it can be expected to occur at lower beam fluxes in other cases where thermal conduction is suppressed due to material properties, geometry, or ambient thermal conditions.

Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

Science.gov (United States)

Lei, Hao; Wang, Meihan; Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka

2013-11-01

Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

Energy Technology Data Exchange (ETDEWEB)

Lei, Hao, E-mail: haolei@imr.ac.cn [State Key Laboratory for Corrosion and Protection, Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Wang, Meihan [College of Mechanical Engineering, Shenyang University, Shenyang 110044 (China); Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka [Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297 (Japan)

2013-11-15

Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

Stress, microstructure and evolution under ion irradiation in thin films grown by ion beam sputtering: modelling and application to interfacial effects in metallic multilayers

International Nuclear Information System (INIS)

Debelle, A.

2006-09-01

We have investigated the formation of the interfacial chemical mixing in Mo/Ni multilayers, and particularly the influence of ballistic effects during the growth. For this purpose, hetero-epitaxial b.c.c./f.c.c. Mo(110)/Ni(111) multilayers were grown by two deposition methods: thermal evaporation and direct ion beam sputtering. As a preliminary, an accurate description of the stress state in pure sputtered Mo thin films was required. Microstructural and stress state analyses were essentially carried out by X-ray diffraction, and ion irradiation was used as a powerful tool to control the stress level. We showed that thermal evaporated thin films exhibit a weak tensile growth stress (∼ 0.6 GPa) that can be accounted for by the grain boundary relaxation model, whereas sputtered thin films develop large compressive growth stress (- 2 to - 4 GPa). This latter results from the bombardment of the growing film by the energetic particles involved during the sputtering process (atomic peening phenomenon), which induces the formation of defects in the layers, generating volume distortions. We thus developed a stress model that includes a hydrostatic stress component to account for these volume strains. This model allowed us to determine the 'unstressed and free of defects lattice parameter' a 0 , solely linked to chemical effects. For epitaxial Mo layers, it was possible to separate coherency stress from growth stress due to their distinct kinetic evolution during ion irradiation. Therefore, the stress analysis enabled us to determine the a 0 values in Mo sub-layers of Mo/Ni superlattices. A tendency to the formation of an interfacial alloy is observed independently of the growth conditions, which suggests that thermodynamic forces favour the exchange mechanism. However, the extent of the intermixing effect is clearly enhanced by ballistic effects. (author)

Development of neutral beam source using electron beam excited plasma

International Nuclear Information System (INIS)

Hara, Yasuhiro; Hamagaki, Manabu; Mise, Takaya; Hara, Tamio

2011-01-01

A low-energy neutral beam (NB) source, which consists of an electron-beam-excited plasma (EBEP) source and two carbon electrodes, has been developed for damageless etching of ultra-large-scale integrated (ULSI) devices. It has been confirmed that the Ar ion beam energy was controlled by the acceleration voltage and the beam profile had good uniformity over the diameter of 80 mm. Dry etching of a Si wafer at the floating potential has been carried out by Ar NB. Si sputtering yield by an Ar NB clearly depends on the acceleration voltage. This result shows that the NB has been generated through the charge exchange reaction from the ion beam in the process chamber. (author)

Single side damage simulations and detection in beam-like structures

International Nuclear Information System (INIS)

Zhou, Yun-Lai; Perera, R; Wahab, M Abdel; Maia, N; Sampaio, R; Figueiredo, E

2015-01-01

Beam-like structures are the most common components in real engineering, while single side damage is often encountered. In this study, a numerical analysis of single side damage in a free-free beam is analysed with three different finite element models; namely solid, shell and beam models for demonstrating their performance in simulating real structures. Similar to experiment, damage is introduced into one side of the beam, and natural frequencies are extracted from the simulations and compared with experimental and analytical results. Mode shapes are also analysed with modal assurance criterion. The results from simulations reveal a good performance of the three models in extracting natural frequencies, and solid model performs better than shell while shell model performs better than beam model under intact state. For damaged states, the natural frequencies captured from solid model show more sensitivity to damage severity than shell model and shell model performs similar to the beam model in distinguishing damage. The main contribution of this paper is to perform a comparison between three finite element models and experimental data as well as analytical solutions. The finite element results show a relatively well performance. (paper)

Sputtering of octatetraene by 15 keV C{sub 60} projectiles: Comparison of reactive interatomic potentials

Energy Technology Data Exchange (ETDEWEB)

Kanski, Michal; Maciazek, Dawid; Golunski, Mikolaj; Postawa, Zbigniew, E-mail: zbigniew.postawa@uj.edu.pl

2017-02-15

Highlights: • Probing the effect of interatomic potentials on sputtering of an octatetraene sample. • Problems with charge calculations are observed during cluster impact for ReaxFF. • COMB3 leads to a very low sputtering yield due to abrupt energy dissipation. • AIREBO is computationally the most efficient, while ReaxFF is more accurate. - Abstract: Molecular dynamics computer simulations have been used to probe the effect of the AIREBO, ReaxFF and COMB3 interatomic potentials on sputtering of an organic sample composed of octatetraene molecules. The system is bombarded by a 15 keV C{sub 60} projectile at normal incidence. The effect of the applied force fields on the total time of simulation, the calculated sputtering yield and the angular distribution of sputtered particles is investigated and discussed. It has been found that caution should be taken when simulating particles ejection from nonhomogeneous systems that undergo significant fragmentation described by the ReaxFF. In this case, the charge state of many particles is improper due to an inadequacy of a procedure used for calculating partial charges on atoms in molecules for conditions present during sputtering. A two-step simulation procedure is proposed to minimize the effect of this deficiency. There is also a possible problem with the COMB3 potential, at least at conditions present during cluster impact, as its results are very different from AIREBO or ReaxFF.

Tungsten self-sputtering yield with different incidence angles and target temperatures

International Nuclear Information System (INIS)

Bandourko, V.; Nakamura, K.; Akiba, M.; Jimbou, R.

1998-01-01

The self-sputtering of different types of tungsten due to 1 keV W + bombardment at temperatures of 25 C and 600 C and incident angles in the range of 30-60 was studied by means of the weight loss method. The experimental data at room temperature agreed reasonably with the results of TRIM calculations. Enhanced self-sputtering yields due to beam-induced desorption of WO 2 were found at a temperature of 600 C. The weight loss of W-Cu composite is larger than that of the CVD-W and ps-W under the same irradiation conditions due to the selective removal of copper. (orig.)

Electron beam induced coloration and luminescence in layered structure of WO3 thin films grown by pulsed dc magnetron sputtering

International Nuclear Information System (INIS)

Karuppasamy, A.; Subrahmanyam, A.

2007-01-01

Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO 3 film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device

Realization of synaptic learning and memory functions in Y2O3 based memristive device fabricated by dual ion beam sputtering

Science.gov (United States)

Das, Mangal; Kumar, Amitesh; Singh, Rohit; Than Htay, Myo; Mukherjee, Shaibal

2018-02-01

Single synaptic device with inherent learning and memory functions is demonstrated based on a forming-free amorphous Y2O3 (yttria) memristor fabricated by dual ion beam sputtering system. Synaptic functions such as nonlinear transmission characteristics, long-term plasticity, short-term plasticity and ‘learning behavior (LB)’ are achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure. An ‘LB’ function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems. The realization of key synaptic functions in a cost-effective MIS structure would promote much cheaper synapse for artificial neural network.

MultiSIMNRA: A computational tool for self-consistent ion beam analysis using SIMNRA

International Nuclear Information System (INIS)

Silva, T.F.; Rodrigues, C.L.; Mayer, M.; Moro, M.V.; Trindade, G.F.; Aguirre, F.R.; Added, N.; Rizzutto, M.A.; Tabacniks, M.H.

2016-01-01

Highlights: • MultiSIMNRA enables the self-consistent analysis of multiple ion beam techniques. • Self-consistent analysis enables unequivocal and reliable modeling of the sample. • Four different computational algorithms available for model optimizations. • Definition of constraints enables to include prior knowledge into the analysis. - Abstract: SIMNRA is widely adopted by the scientific community of ion beam analysis for the simulation and interpretation of nuclear scattering techniques for material characterization. Taking advantage of its recognized reliability and quality of the simulations, we developed a computer program that uses multiple parallel sessions of SIMNRA to perform self-consistent analysis of data obtained by different ion beam techniques or in different experimental conditions of a given sample. In this paper, we present a result using MultiSIMNRA for a self-consistent multi-elemental analysis of a thin film produced by magnetron sputtering. The results demonstrate the potentialities of the self-consistent analysis and its feasibility using MultiSIMNRA.

Time-dependent angular distribution of sputtered particles from amorphous targets

International Nuclear Information System (INIS)

Yamamura, Yasunori

1990-01-01

Using the time-evolution computer simulation code DYACAT, the time-dependent behavior of sputtering phenomena has been investigated. The DYACAT program is based on the binary collision approximation, and the cascade development in solids is followed time-evolutionally. The total sputtering yield, the angular distribution and the energy distribution of sputtered atoms are calculated as a function of time for 1 keV Ar→Cu, where the angle of incidence is the inverse surface normal. It is found that the angular distribution of the prompt collisional phase of the sputtering process shows an under-cosine and that the corresponding energy spectrum has a peak near 10 eV. The slow collisional phase of 1 keV Ar→Cu will start after 3x10 -14 s, and its angular distribution shows an over-cosine distribution. (orig.)

Simulation of electron cloud effects to heavy ion beams

Energy Technology Data Exchange (ETDEWEB)

Yaman, Fatih; Gjonaj, Erion; Weiland, Thomas [Technische Universitaet Darmstadt (Germany). Institut fuer Theorie Elektromagnetischer Felder

2011-07-01

Electron cloud (EC) driven instability can cause beam loss, emittance growth, trajectory change and wake fields. Mentioned crucial effects of EC motivated researchers to understand the EC build up mechanism and the effects of EC to the beam. This motivation also induced the progress of developing new simulation codes. EC simulations can roughly be divided into two classes such as, softwares whose goals are to simulate the build up of the EC during the passage of a bunch train and the codes which model the interaction of a bunch with an EC. The aim of this study is to simulate the effects of electron cloud (EC) on the dynamics of heavy ion beams which are used in heavy ion synchrotron (SIS-18) at GSI. To do this, a 3-D and self-consistent simulation program based on particle in cell (PIC) method is used. In the PIC cycle, accurate solution of the Maxwell equations is obtained by employing discontinuous Galerkin finite element method. As a model, we assumed a perfectly conducting beam pipe which was uniformly (or randomly) loaded with the electrons. Then as parallel with the realistic cases in SIS-18, a single bunch consisting of U{sup +73} ions was extracted which could propagate in this pipe. Due to EC-ion bunch interaction, electrons gained energy and their displacements were observed. Electric and magnetic field components and EC charge density were calculated, numerically.

Transition from linear to nonlinear sputtering of solid xenon

DEFF Research Database (Denmark)

Dutkiewicz, L.; Pedrys, R.; Schou, Jørgen

1995-01-01

Self-sputtering of solid xenon has been studied with molecular dynamics simulations as a model system for the transition from dominantly linear to strongly nonlinear effects. The simulation covered the projectile energy range from 20 to 750 eV. Within a relatively narrow range from 30 to 250 e...

An analytical simulation technique for cone-beam CT and pinhole SPECT

International Nuclear Information System (INIS)

Zhang Xuezhu; Qi Yujin

2011-01-01

This study was aimed at developing an efficient simulation technique with an ordinary PC. The work involved derivation of mathematical operators, analytic phantom generations, and effective analytical projectors developing for cone-beam CT and pinhole SPECT imaging. The computer simulations based on the analytical projectors were developed by ray-tracing method for cone-beam CT and voxel-driven method for pinhole SPECT of degrading blurring. The 3D Shepp-Logan, Jaszczak and Defrise phantoms were used for simulation evaluations and image reconstructions. The reconstructed phantom images were of good accuracy with the phantoms. The results showed that the analytical simulation technique is an efficient tool for studying cone-beam CT and pinhole SPECT imaging. (authors)

The mechanism of sputter-induced orientation change in YBCO films on MgO (001)

International Nuclear Information System (INIS)

Huang, Y.; Vuchic, B.V.; Baldo, P.; Merkle, K.L.; Buchholz, D.B.; Mahajan, S.; Lei, J.S.; Markworth, P.R.; Chang, R.P.H.

1996-12-01

The mechanisms of the sputter-induced orientation change in YBa 2 Cu 3 O 7-x (YBCO) films grown on MgO (001) substrates by pulsed organometallic beam epitaxy (POMBE) are investigated by x-ray diffraction. Rutherford backscatter spectroscopy (RBS), cross-section TEM (XTEM) and microanalysis. It is found that the W atom implantation concurring with the ion sputtering plays an important role in effecting the orientation change. This implantation changes the surface structure of the substrate and induces an intermediate layer in the initial growth of the YBCO film, which in turn acts as a template that induces the orientation change. It seems that the surface morphology change caused by ion sputtering has only a minor effect on the orientation change

Beam, multi-beam and broad beam production with COMIC devices

International Nuclear Information System (INIS)

Sortais, P.; Lamy, T.; Medard, J.; Angot, J.; Peaucelle, C.

2012-01-01

The COMIC discharge cavity is a very versatile technology. We will present new results and devices that match new applications like: molecular beams, ultra compact beam line for detectors calibrations, quartz source for on-line application, high voltage platform source, sputtering /assistance broad beams and finally, a quite new use, high energy multi-beam production for surface material modifications. In more details, we will show that the tiny discharge of COMIC can mainly produce molecular ions (H 3+ ). We will present the preliminary operation of the fully quartz ISOLDE COMIC version, in collaboration with IPN Lyon, we will present a first approach for a slit extraction version of a three cavity device, and after discussing about various extraction systems on the multi discharge device (41 cavities) we will show the low energy broad beam (2 KV) and high energy multi-beams (10 beams up to 30 KV) productions. We will specially present the different extraction systems adapted to each application and the beams characteristics which are strongly dependent on the voltage distribution of an accel-accel two electrodes extraction system. The paper is followed by the slides of the presentation. (authors)

Simulation studies of emittance growth in RMS mismatched beams

International Nuclear Information System (INIS)

Cucchetti, A.; Wangler, T.; Reiser, M.

1991-01-01

As shown in a separate paper, a charged-particle beam, whose rms size is not matched when injected into a transport channel or accelerator, has excess energy compared with that of a matched beam. If nonlinear space-charge forces are present and the mismatched beam transforms to a matched equilibrium state, rms-emittance growth will occur. The theory yields formulas for the possible rms-emittance growth, but not for the time it takes to achieve this growth. In this paper we present the results of systematic simulation studies for a mismatched 2-D round beam in an ideal transport channel with continuous linear focusing. Emittance growth rates obtained from the simulations for different amounts of mismatch and initial charge will be presented and the emittance growth will be compared with the theory. 6 refs., 7 figs

Issues and opportunities: beam simulations for heavy ion fusion

International Nuclear Information System (INIS)

Friedman, A

1999-01-01

UCRL- JC- 134975 PREPRINT code offering 3- D, axisymmetric, and ''transverse slice'' (steady flow) geometries, with a hierarchy of models for the ''lattice'' of focusing, bending, and accelerating elements. Interactive and script- driven code steering is afforded through an interpreter interface. The code runs with good parallel scaling on the T3E. Detailed simulations of machine segments and of complete small experiments, as well as simplified full- system runs, have been carried out, partially benchmarking the code. A magnetoinductive model, with module impedance and multi- beam effects, is under study. experiments, including an injector scalable to multi- beam arrays, a high- current beam transport and acceleration experiment, and a scaled final- focusing experiment. These ''phase I'' projects are laying the groundwork for the next major step in HIF development, the Integrated Research Experiment (IRE). Simulations aimed directly at the IRE must enable us to: design a facility with maximum power on target at minimal cost; set requirements for hardware tolerances, beam steering, etc.; and evaluate proposed chamber propagation modes. Finally, simulations must enable us to study all issues which arise in the context of a fusion driver, and must facilitate the assessment of driver options. In all of this, maximum advantage must be taken of emerging terascale computer architectures, requiring an aggressive code development effort. An organizing principle should be pursuit of the goal of integrated and detailed source- to- target simulation. methods for analysis of the beam dynamics in the various machine concepts, using moment- based methods for purposes of design, waveform synthesis, steering algorithm synthesis, etc. Three classes of discrete- particle models should be coupled: (1) electrostatic/ magnetoinductive PIC simulations should track the beams from the source through the final- focusing optics, passing details of the time- dependent distribution function to

X-ray convergent beam pattern simulation using the Moodie-Wagenfeld equations: 3-beam Laue case

International Nuclear Information System (INIS)

Liu, L.; Goodman, P.

1998-01-01

Pattern simulations for 3-beam X-ray diffraction are presented, by multi-slice calculations based on Moodie and Wagenfeld's formulation of the X-ray equations, which factorise Maxwell's equations into Dirac format, using circular-polarisation bases. The results are presented in the form of convergent-beam patterns for each diffraction order, using experience gained from CBED (convergent beam electron diffraction) and LACBED (large-angle CBED), since this displays the results in the most compact form. The acronym CBXRAD (convergent-beam X-ray-diffraction) is used for these patterns. Although optics required for the complete patterns is not currently available, capillary focussing is undergoing rapid development, and our simulations define critical angular ranges within reach of current designs. Simulations for light and heavy-atoms structures belonging to the enantiomorphic space-group pair P3 1 21 and P3 2 21, provide clear evidence of chiral interaction between radiation and structure, highlighting divergences from the well studied CBED pattern symmetries. MoKα 1 and TaKα 1 wavelengths were used to minimise absorption for the two structures respectively, although 'anomalous absorption' is always important due to the large thicknesses required (up to 20 mm)

Paul Trap Simulator Experiment (PTSX) to simulate intense beam propagation through a periodic focusing quadrupole field

International Nuclear Information System (INIS)

Davidson, Ronald C.; Efthimion, Philip C.; Gilson, Erik; Majeski, Richard; Qin, Hong

2002-01-01

The Paul Trap Simulator Experiment (PTSX) is under construction at the Princeton Plasma Physics Laboratory to simulate intense beam propagation through a periodic quadrupole magnetic field. In the Paul trap configuration, a long nonneutral plasma column is confined axially by dc voltages on end cylinders at z=+L and z=-L, and transverse confinement is provided by segmented cylindrical electrodes with applied oscillatory voltages ±V 0 (t) over 90 deg. segments. Because the transverse focusing force is similar in waveform to that produced by a discrete set of periodic quadrupole magnets in a frame moving with the beam, the Paul trap configuration offers the possibility of simulating intense beam propagation in a compact laboratory facility. The experimental layout is described, together with the planned experiments to study beam mismatch, envelope instabilities, halo particle production, and collective wave excitations

Paul Trap Simulator Experiment (PTSX) to simulate intense beam propagation through a periodic focusing quadrupole field

Science.gov (United States)

Davidson, Ronald C.; Efthimion, Philip C.; Gilson, Erik; Majeski, Richard; Qin, Hong

2002-01-01

The Paul Trap Simulator Experiment (PTSX) is under construction at the Princeton Plasma Physics Laboratory to simulate intense beam propagation through a periodic quadrupole magnetic field. In the Paul trap configuration, a long nonneutral plasma column is confined axially by dc voltages on end cylinders at z=+L and z=-L, and transverse confinement is provided by segmented cylindrical electrodes with applied oscillatory voltages ±V0(t) over 90° segments. Because the transverse focusing force is similar in waveform to that produced by a discrete set of periodic quadrupole magnets in a frame moving with the beam, the Paul trap configuration offers the possibility of simulating intense beam propagation in a compact laboratory facility. The experimental layout is described, together with the planned experiments to study beam mismatch, envelope instabilities, halo particle production, and collective wave excitations.

Beam simulation tools for GEANT4 (and neutrino source applications)

International Nuclear Information System (INIS)

V.Daniel Elvira, Paul Lebrun and Panagiotis Spentzouris email daniel@fnal.gov

2002-01-01

Geant4 is a tool kit developed by a collaboration of physicists and computer professionals in the High Energy Physics field for simulation of the passage of particles through matter. The motivation for the development of the Beam Tools is to extend the Geant4 applications to accelerator physics. Although there are many computer programs for beam physics simulations, Geant4 is ideal to model a beam going through material or a system with a beam line integrated to a complex detector. There are many examples in the current international High Energy Physics programs, such as studies related to a future Neutrino Factory, a Linear Collider, and a very Large Hadron Collider

DART: a simulation code for charged particle beams

International Nuclear Information System (INIS)

White, R.C.; Barr, W.L.; Moir, R.W.

1988-01-01

This paper presents a recently modified verion of the 2-D DART code designed to simulate the behavior of a beam of charged particles whose paths are affected by electric and magnetic fields. This code was originally used to design laboratory-scale and full-scale beam direct converters. Since then, its utility has been expanded to allow more general applications. The simulation technique includes space charge, secondary electron effects, and neutral gas ionization. Calculations of electrode placement and energy conversion efficiency are described. Basic operation procedures are given including sample input files and output. 7 refs., 18 figs

An interactive beam line simulator module for RHIC

International Nuclear Information System (INIS)

MacKay, W.W.

1997-01-01

This paper describes the interactive simulation engine, bl, designed for the RHIC project. The program tracks as output to shared memory the central orbit, Twiss and dispersion functions, as well as the 6 x 6 beam hyperellipsoid. Transfer matrices between elements are available via interactive requests. Using a 6-d model, optical elements are modeled with a linear transfer matrix and a vector. The vector allows simulation of misalignments, shifts in field strengths, and beam rigidity. Currently only a linear model is used for elements. In addition to the usual magnets, a foil element is included which can shift the beam's rigidity (resulting from a change of charge and energy loss), as well as increase the momentum spread and emittance. Running as a Glish client, bl can be interfaced to other programs, such as an orbit plotter and a power supply application to give a quick prediction of the beam orbit from actual operating currents in the accelerator. Various strengths and offsets may be changed by sending Glish events to bl

The Beam Break-Up Numerical Simulator

International Nuclear Information System (INIS)

Travish, G.A.

1989-11-01

Beam Break-Up (BBU) is a severe constraint in accelerator design, limiting beam current and quality. The control of BBU has become the focus of much research in the design of the next generation collider, recirculating and linear induction accelerators and advanced accelerators. Determining the effect on BBU of modifications to cavities, the focusing elements or the beam is frequently beyond the ability of current analytic models. A computer code was written to address this problem. The Beam Break-Up Numerical Simulator (BBUNS) was designed to numerically solve for beam break-up (BBU) due to an arbitrary transverse wakefield. BBUNS was developed to be as user friendly as possible on the Cray computer series. The user is able to control all aspects of input and output by using a single command file. In addition, the wakefield is specified by the user and read in as a table. The program can model energy variations along and within the beam, focusing magnetic field profiles can be specified, and the graphical output can be tailored. In this note we discuss BBUNS, its structure and application. Included are detailed instructions, examples and a sample session of BBUNS. This program is available for distribution. 50 refs., 18 figs., 5 tabs

Numerical Simulations for the Beam-Induced Electron Cloud in the LHC Beam Screen

CERN Document Server

Brüning, Oliver Sim

1998-01-01

The following work summarises simulation results obtained at CERN for the beam-induced electron cloud and looks at possible cures for the heat load in the LHC beam screen. The synchrotron radiation in the LHC creates a continuous flow of photoelectrons. These electrons are accelerated by the electric field of the bunch and hit the vacuum chamber on the opposite side of the beam pipe where they crea te secondary electrons which are again accelerated by the next bunch. For a large secondary emission yield the above mechanism leads to an exponential growth of the electron cloud which is limited by space charge forces. The simulations use a two-dimensional mesh for the space charge calculations and include the effect of image charges on the vacuum chamber wall. Depending on the quantum yield for the production of photoelectrons, the secondary emission yield and the reflectivity, the heat load can vary from 0.1 W/m to more than 15 W/m.

Hot oxygen atoms: Their generation and chemistry. [Production by sputtering; reaction with butenes

Energy Technology Data Exchange (ETDEWEB)

Ferrieri, R.A.; Chu, Yung Y.; Wolf, A.P.

1987-01-01

Oxygen atoms with energies between 1 and 10 eV have been produced through ion beam sputtering from metal oxide targets. Argon ion beams were used on Ta/sub 2/O/sub 5/ and V/sub 2/O/sub 5/. Results show that some control may be exerted over the atom's kinetic energy by changing the target. Reactions of the hot O(/sup 3/P) with cis- and trans-butenes were investigated. (DLC)

Radial particle distributions in PARMILA simulation beams

International Nuclear Information System (INIS)

Boicourt, G.P.

1984-03-01

The estimation of beam spill in particle accelerators is becoming of greater importance as higher current designs are being funded. To the present, no numerical method for predicting beam-spill has been available. In this paper, we present an approach to the loss-estimation problem that uses probability distributions fitted to particle-simulation beams. The properties of the PARMILA code's radial particle distribution are discussed, and a broad class of probability distributions are examined to check their ability to fit it. The possibility that the PARMILA distribution is a mixture is discussed, and a fitting distribution consisting of a mixture of two generalized gamma distributions is found. An efficient algorithm to accomplish the fit is presented. Examples of the relative prediction of beam spill are given. 26 references, 18 figures, 1 table

Iodine Beam Dump Design and Fabrication

Science.gov (United States)

Polzin, K. A.; Bradley, D. E.

2017-01-01

During the testing of electric thrusters, high-energy ions impacting the walls of a vacuum chamber can cause corrosion and/or sputtering of the wall materials, which can damage the chamber walls. The sputtering can also introduce the constituent materials of the chamber walls into an experiment, with those materials potentially migrating back to the test article and coating it with contaminants over time. The typical method employed in this situation is to install a beam dump fabricated from materials that have a lower sputter yield, thus reducing the amount of foreign material that could migrate towards the test article or deposit on anything else present in the vacuum facility.

Ultra-low energy Ar+ beam applied for SIMS depth profile analysis of layered nanostructures

International Nuclear Information System (INIS)

Konarski, P.; Mierzejewska, A.; Iwanejko, I.

2001-01-01

Secondary ion mass spectrometry (SIMS) depth profile analyses of flat layered nanostructures: 10 nm Ta 2 O 3 /Ta and 20 nm (10 x B 4 C/Mo)/Si as well as microparticles of core (illite) - shell (rutile) structure, performed with the use of ultra-low energy ion beam (180-880 eV, Ar + ), are presented. The profiles were obtained using 'mesa' scanning technique and also sample rotation. Depth profile resolution below 1 nanometer was obtained for flat nanostructures. Presented experimental results are compared with Monte Carlo sputtering simulations of analysed structures. A method of finding beam energy, optimal for the best resolution SIMS depth profile analysis, is suggested. (author)

Dual-beam focused ion beam/electron microscopy processing and metrology of redeposition during ion-surface 3D interactions, from micromachining to self-organized picostructures.

Science.gov (United States)

Moberlychan, Warren J

2009-06-03

Focused ion beam (FIB) tools have become a mainstay for processing and metrology of small structures. In order to expand the understanding of an ion impinging a surface (Sigmund sputtering theory) to our processing of small structures, the significance of 3D boundary conditions must be realized. We consider ion erosion for patterning/lithography, and optimize yields using the angle of incidence and chemical enhancement, but we find that the critical 3D parameters are aspect ratio and redeposition. We consider focused ion beam sputtering for micromachining small holes through membranes, but we find that the critical 3D considerations are implantation and redeposition. We consider ion beam self-assembly of nanostructures, but we find that control of the redeposition by ion and/or electron beams enables the growth of nanostructures and picostructures.

Cornell electron beam ion source

International Nuclear Information System (INIS)

Kostroun, V.O.; Ghanbari, E.; Beebe, E.N.; Janson, S.W.

1981-01-01

An electron beam ion source (EBIS) for the production of low energy, multiply charged ion beams to be used in atomic physics experiments has been designed and constructed. An external high perveance electron gun is used to launch the electron beam into a conventional solenoid. Novel features of the design include a distributed sputter ion pump to create the ultrahigh vacuum environment in the ionization region of the source and microprocessor control of the axial trap voltage supplies

Atomistic self-sputtering mechanisms of rf breakdown in high-gradient linacs

International Nuclear Information System (INIS)

Insepov, Z.; Norem, J.; Veitzer, S.

2010-01-01

Molecular dynamics (MD) models of sputtering solid and liquid surfaces - including the surfaces charged by interaction with plasma, Coulomb explosion, and Taylor cone formation - were developed. MD simulations of self-sputtering of a crystalline (1 0 0) copper surface by Cu + ions in a wide range of ion energies (50 eV-50 keV) were performed. In order to accommodate energetic ion impacts on a target, a computational model was developed that utilizes MD to simulate rapid atomic collisions in the central impact zone, and a finite-difference method to absorb the energy and shock wave for the collisional processes occurring at a longer time scales. The sputtering yield increases if the surface temperature rises and the surface melts as a result of heat from plasma. Electrostatic charging of the surface under bombardment with plasma ions is another mechanism that can dramatically increase the sputtering yield because it reduces the surface binding energy and the surface tension. An MD model of Taylor cone formation at a sharp tip placed in a high electric field was developed, and the model was used to simulate Taylor cone formation for the first time. Good agreement was obtained between the calculated Taylor cone angle (104.3 deg.) and the experimental one (98.6 deg.). A Coulomb explosion (CE) was proposed as the main surface failure mechanism triggering breakdown, and the dynamics of CE was studied by MD.

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO-₂x Thin Films.

Science.gov (United States)

Wang, Chun-Min; Huang, Chun-Chieh; Kuo, Jui-Chao; Sahu, Dipti Ranjan; Huang, Jow-Lay

2015-08-14

Tin oxide (SnO 2-x ) thin films were prepared under various flow ratios of O₂/(O₂ + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O₂/(O₂ + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO₂ thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

Pattern formation on Ge by low energy ion beam erosion

International Nuclear Information System (INIS)

Teichmann, Marc; Lorbeer, Jan; Frost, Frank; Rauschenbach, Bernd; Ziberi, Bashkim

2013-01-01

Modification of nanoscale surface topography is inherent to low-energy ion beam erosion processes and is one of the most important fields of nanotechnology. In this report a comprehensive study of surface smoothing and self-organized pattern formation on Ge(100) by using different noble gases ion beam erosion is presented. The investigations focus on low ion energies (⩽ 2000 eV) and include the entire range of ion incidence angles. It is found that for ions (Ne, Ar) with masses lower than the mass of the Ge target atoms, no pattern formation occurs and surface smoothing is observed for all angles of ion incidence. In contrast, for erosion with higher mass ions (Kr, Xe), ripple formation starts at incidence angles of about 65° depending on ion energy. At smaller incident angles surface smoothing occurs again. Investigations of the surface dynamics for specific ion incidence angles by changing the ion fluence over two orders of magnitude gives a clear evidence for coarsening and faceting of the surface pattern. Both observations indicate that gradient-dependent sputtering and reflection of primary ions play crucial role in the pattern evolution, just at the lowest accessible fluences. The results are discussed in relation to recently proposed redistributive or stress-induced models for pattern formation. In addition, it is argued that a large angular variation of the sputter yield and reflected primary ions can significantly contribute to pattern formation and evolution as nonlinear and non-local processes as supported by simulation of sputtering and ion reflection. (paper)

Beam dynamics simulation of W-band photo injector

International Nuclear Information System (INIS)

Zhu Xiongwei

2002-01-01

The authors present a beam dynamics simulation study on 1.6 cell, high gradient W-Band photocathode RF gun which is capable of generating and accelerating 300 pC electron bunch. The design system is made up of 91.392 GHz photocathode RF gun and 91.392 GHz travelling wave linac cells. Based on the numerical simulation using SUPERFISH and PARMELA and the conventional RF linac scaling law, the design will produce 300 pC at 1.74 MeV with bunch length 0.72 ps and normalized transverse emittance 0.55 mm mrad. The authors study the beam dynamics in high frequency and high gradient; due to the high gradient, the ponderomotive effect plays an important role in beam dynamics; the authors found the ponderomotive effect still exist with only the fundamental space harmonics (synchrotron mode) due to the coupling of the transverse and longitudinal motion

Simulation of Electron Beam Trajectory of Thermionic Electron Gun Type with Pierce Electrode

International Nuclear Information System (INIS)

Suprapto; Djoko-SP; Djasiman

2000-01-01

The simulation of electron beam trajectory for electron gun of electron beam machine has been done. The simulation is carried out according to mechanical design of the electron gun. The simulation is carried out by using the software made by Andrzej Soltan Institute for Nuclear Studies, Swierk-Poland. The result obtained from simulation is approximately parallel electron beam trajectory of 20 mA beam current at 0.66 kV anode voltage, 15 mm cathode-anode distance and 67.5 o cathode angle. Arrangement of electron gun and accelerating tube with 15 kV voltage between anode and the first electrode of accelerating tube yields focus distance of 34 mm from the to cathode. To obtain the approximately parallel beam trajectory which has -0.03 o entrance angles to accelerating tube, the suitable cathode-anode voltage is 12.66 kV. With the entrance angle of -0.03 o it is expected that the electron beam can be accelerated and the beam profile has a small divergence after passing the accelerating tube. (author)

Electromagnetic computer simulations of collective ion acceleration by a relativistic electron beam

International Nuclear Information System (INIS)

Galvez, M.; Gisler, G.R.

1988-01-01

A 2.5 electromagnetic particle-in-cell computer code is used to study the collective ion acceleration when a relativistic electron beam is injected into a drift tube partially filled with cold neutral plasma. The simulations of this system reveals that the ions are subject to electrostatic acceleration by an electrostatic potential that forms behind the head of the beam. This electrostatic potential develops soon after the beam is injected into the drift tube, drifts with the beam, and eventually settles to a fixed position. At later times, this electrostatic potential becomes a virtual cathode. When the permanent position of the electrostatic potential is at the edge of the plasma or further up, then ions are accelerated forward and a unidirectional ion flow is obtained otherwise a bidirectional ion flow occurs. The ions that achieve higher energy are those which drift with the negative potential. When the plasma density is varied, the simulations show that optimum acceleration occurs when the density ratio between the beam (n b ) and the plasma (n o ) is unity. Simulations were carried out by changing the ion mass. The results of these simulations corroborate the hypothesis that the ion acceleration mechanism is purely electrostatic, so that the ion acceleration depends inversely on the charge particle mass. The simulations also show that the ion maximum energy increased logarithmically with the electron beam energy and proportional with the beam current

Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation

Science.gov (United States)

Ristau, Detlev; Gunster, Stefan; Bosch, Salvador; Duparre, Angela; Masetti, Enrico; Ferre-Borrull, Josep; Kiriakidis, George; Peiro, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

2002-06-01

Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approx1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nmrms) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

Beam limiter for thermonuclear fusion devices

International Nuclear Information System (INIS)

Kaminsky, M.S.

1976-01-01

A beam limiter circumscribes the interior surface of a vacuum vessel to inhibit collisions of contained plasma and the vessel walls. The cross section of the material making up the limiter has a flatsided or slightly concave portion of increased width towards the plasma and portions of decreased width towards the interior surface of the vessel. This configuration is designed to prevent a major fraction of the material sputtered, vaporized and blistered from the limiter from reaching the plasma. It also allows adequate heat transfer from the wider to the narrower portions. The preferred materials for the beam limiter are solids of sintered, particulate materials of low atomic number with low vapor pressure and low sputtering and blistering yields. 7 claims, 3 figures

Nonlinear delta f Simulations of Collective Effects in Intense Charged Particle Beams

CERN Document Server

Hong Qi

2003-01-01

A nonlinear delta(f) particle simulation method based on the Vlasov-Maxwell equations has been recently developed to study collective processes in high-intensity beams, where space-charge and magnetic self-field effects play a critical role in determining the nonlinear beam dynamics. Implemented in the Beam Equilibrium, Stability and Transport (BEST) code [H. Qin, R.C. Davidson, and W.W. Lee, Physical Review -- Special Topics on Accelerator and Beams 3 (2000) 084401; 3 (2000) 109901.], the nonlinear delta(f) method provides a low-noise and self-consistent tool for simulating collective interactions and nonlinear dynamics of high-intensity beams in modern and next-generation accelerators and storage rings, such as the Spallation Neutron Source and heavy ion fusion drivers. A wide range of linear eigenmodes of high-intensity charged-particle beams can be systematically studied using the BEST code. Simulation results for the electron-proton two-stream instability in the Proton Storage Ring experiment [R. Macek, ...

Special relativity in beam trajectory simulation in small accelerators

International Nuclear Information System (INIS)

Pramudita Anggraita; Budi Santosa; Taufik; Emy Mulyani; Frida Iswinning Diah

2012-01-01

Calculation for trajectory simulation of particle beam in small accelerators should account special relativity effect in the beam motion, which differs between parallel and perpendicular direction to the beam velocity. For small electron beam machine of 300 keV, the effect shows up as the rest mass of electron is only 511 keV. Neglecting the effect yields wrong kinetic energy after 300 kV of dc acceleration. For a 13 MeV PET (positron emission tomography) baby cyclotron accelerating proton beam, the effect increases the proton mass by about 1.4% at the final energy. To keep the beam isochronous with the accelerating radiofrequency, a radial increase of the average magnetic field must be designed accordingly. (author)

Effects of surface relief on the high-dose sputtering of amorphous silicon and graphite by Ar ions

International Nuclear Information System (INIS)

Shulga, V.I.

2014-01-01

The effects of ion-induced surface relief on high-dose sputtering of amorphous silicon and graphite targets have been studied using binary-collision computer simulation. The relief was modeled as a wavelike surface along two mutually perpendicular surface axes (a 3D hillock-and-valley relief). Most simulations were carried out for normally-incident 30-keV Ar ions. It was shown that the surface relief can both increase and decrease the sputtering yield compared to that for a flat surface. The results of simulations suggest that stabilization of the surface relief is possible even in the absence of any smoothing processes such as surface diffusion of atoms. Effects of a surface relief on the experimentally measurable angular and energy distributions of sputtered atoms are also considered. The fitting parameters of these distributions are shown to be non-monotonic functions of the relief aspect ratio. The angular distribution of atoms sputtered from a relief surface is modulated to a great extent by the shape of the relief. For a rough surface, azimuthal isotropy of the angular distribution of sputtered atoms was found, but at high bombarding energies only

Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

International Nuclear Information System (INIS)

Li Dejie

2002-01-01

In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%

Surface characterization after subaperture reactive ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Miessler, Andre; Arnold, Thomas; Rauschenbach, Bernd [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

2010-07-01

In usual ion beam etching processes using inert gas (Ar, Xe, Kr..) the material removal is determined by physical sputtering effects on the surface. The admixture of suitable gases (CF{sub 4}+O{sub 2}) into the glow discharge of the ion beam source leads to the generation of reactive particles, which are accelerated towards the substrate where they enhance the sputtering process by formation of volatile chemical reaction products. During the last two decades research in Reactive Ion Beam Etching (RIBE) has been done using a broad beam ion source which allows the treatment of smaller samples (diameter sample < diameter beam). Our goal was to apply a sub-aperture Kaufman-type ion source in combination with an applicative movement of the sample with respect to the source, which enables us to etch areas larger than the typical lateral dimensions of the ion beam. Concerning this matter, the etching behavior in the beam periphery plays a decisive role and has to be investigated. We use interferometry to characterize the final surface topography and XPS measurements to analyze the chemical composition of the samples after RIBE.

Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool

International Nuclear Information System (INIS)

Jeynes, C; Barradas, N P; Marriott, P K; Boudreault, G; Jenkin, M; Wendler, E; Webb, R P

2003-01-01

Rutherford backscattering spectrometry (RBS) and related techniques have long been used to determine the elemental depth profiles in films a few nanometres to a few microns thick. However, although obtaining spectra is very easy, solving the inverse problem of extracting the depth profiles from the spectra is not possible analytically except for special cases. It is because these special cases include important classes of samples, and because skilled analysts are adept at extracting useful qualitative information from the data, that ion beam analysis is still an important technique. We have recently solved this inverse problem using the simulated annealing algorithm. We have implemented the solution in the 'IBA DataFurnace' code, which has been developed into a very versatile and general new software tool that analysts can now use to rapidly extract quantitative accurate depth profiles from real samples on an industrial scale. We review the features, applicability and validation of this new code together with other approaches to handling IBA (ion beam analysis) data, with particular attention being given to determining both the absolute accuracy of the depth profiles and statistically accurate error estimates. We include examples of analyses using RBS, non-Rutherford elastic scattering, elastic recoil detection and non-resonant nuclear reactions. High depth resolution and the use of multiple techniques simultaneously are both discussed. There is usually systematic ambiguity in IBA data and Butler's example of ambiguity (1990 Nucl. Instrum. Methods B 45 160-5) is reanalysed. Analyses are shown: of evaporated, sputtered, oxidized, ion implanted, ion beam mixed and annealed materials; of semiconductors, optical and magnetic multilayers, superconductors, tribological films and metals; and of oxides on Si, mixed metal silicides, boron nitride, GaN, SiC, mixed metal oxides, YBCO and polymers. (topical review)

3D electromagnetic simulation of spatial autoresonance acceleration of electron beams

International Nuclear Information System (INIS)

Dugar-Zhabon, V D; Orozco, E A; González, J D

2016-01-01

The results of full electromagnetic simulations of the electron beam acceleration by a TE 112 linear polarized electromagnetic field through Space Autoresonance Acceleration mechanism are presented. In the simulations, both the self-sustaned electric field and selfsustained magnetic field produced by the beam electrons are included into the elaborated 3D Particle in Cell code. In this system, the space profile of the magnetostatic field maintains the electron beams in the acceleration regime along their trajectories. The beam current density evolution is calculated applying the charge conservation method. The full magnetic field in the superparticle positions is found by employing the trilinear interpolation of the mesh node data. The relativistic Newton-Lorentz equation presented in the centered finite difference form is solved using the Boris algorithm that provides visualization of the beam electrons pathway and energy evolution. A comparison between the data obtained from the full electromagnetic simulations and the results derived from the motion equation depicted in an electrostatic approximation is carried out. It is found that the self-sustained magnetic field is a factor which improves the resonance phase conditions and reduces the beam energy spread. (paper)

SNOW: a digital computer program for the simulation of ion beam devices

International Nuclear Information System (INIS)

Boers, J.E.

1980-08-01

A digital computer program, SNOW, has been developed for the simulation of dense ion beams. The program simulates the plasma expansion cup (but not the plasma source itself), the acceleration region, and a drift space with neutralization if desired. The ion beam is simulated by computing representative trajectories through the device. The potentials are simulated on a large rectangular matrix array which is solved by iterative techniques. Poisson's equation is solved at each point within the configuration using space-charge densities computed from the ion trajectories combined with background electron and/or ion distributions. The simulation methods are described in some detail along with examples of both axially-symmetric and rectangular beams. A detailed description of the input data is presented

Measurement and simulation of the TRR BNCT beam parameters

Energy Technology Data Exchange (ETDEWEB)

Bavarnegin, Elham [Nuclear Science and Technology Research Institute (NSTRI), Tehran (Iran, Islamic Republic of); Department of Physics, University of Guilan, Rasht (Iran, Islamic Republic of); Sadremomtaz, Alireza [Department of Physics, University of Guilan, Rasht (Iran, Islamic Republic of); Khalafi, Hossein [Nuclear Science and Technology Research Institute (NSTRI), Tehran (Iran, Islamic Republic of); Kasesaz, Yaser, E-mail: ykasesaz@aeoi.org.ir [Nuclear Science and Technology Research Institute (NSTRI), Tehran (Iran, Islamic Republic of); Golshanian, Mohadeseh; Ghods, Hossein; Ezzati, Arsalan; Keyvani, Mehdi; Haddadi, Mohammad [Nuclear Science and Technology Research Institute (NSTRI), Tehran (Iran, Islamic Republic of)

2016-09-11

Recently, the configuration of the Tehran Research Reactor (TRR) thermal column has been modified and a proper thermal neutron beam for preclinical Boron Neutron Capture Therapy (BNCT) has been obtained. In this study, simulations and experimental measurements have been carried out to identify the BNCT beam parameters including the beam uniformity, the distribution of the thermal neutron dose, boron dose, gamma dose in a phantom and also the Therapeutic Gain (TG). To do this, the entire TRR structure including the reactor core, pool, the thermal column and beam tubes have been modeled using MCNPX Monte Carlo code. To measure in-phantom dose distribution a special head phantom has been constructed and foil activation techniques and TLD700 dosimeter have been used. The results show that there is enough uniformity in TRR thermal BNCT beam. TG parameter has the maximum value of 5.7 at the depth of 1 cm from the surface of the phantom, confirming that TRR thermal neutron beam has potential for being used in treatment of superficial brain tumors. For the purpose of a clinical trial, more modifications need to be done at the reactor, as, for example design, and construction of a treatment room at the beam exit which is our plan for future. To date, this beam is usable for biological studies and animal trials. There is a relatively good agreement between simulation and measurement especially within a diameter of 10 cm which is the dimension of usual BNCT beam ports. This relatively good agreement enables a more precise prediction of the irradiation conditions needed for future experiments.

Simulation of adiabatic thermal beams in a periodic solenoidal magnetic focusing field

Directory of Open Access Journals (Sweden)

T. J. Barton

2012-12-01

Full Text Available Self-consistent particle-in-cell simulations are performed to verify earlier theoretical predictions of adiabatic thermal beams in a periodic solenoidal magnetic focusing field [K. R. Samokhvalova, J. Zhou, and C. Chen, Phys. Plasmas 14, 103102 (2007PHPAEN1070-664X10.1063/1.2779281; J. Zhou, K. R. Samokhvalova, and C. Chen, Phys. Plasmas 15, 023102 (2008PHPAEN1070-664X10.1063/1.2837891]. In particular, results are obtained for adiabatic thermal beams that do not rotate in the Larmor frame. For such beams, the theoretical predictions of the rms beam envelope, the conservations of the rms thermal emittances, the adiabatic equation of state, and the Debye length are verified in the simulations. Furthermore, the adiabatic thermal beam is found be stable in the parameter regime where the simulations are performed.

FEM simulation of static loading test of the Omega beam

Science.gov (United States)

Bílý, Petr; Kohoutková, Alena; Jedlinský, Petr

2017-09-01

The paper deals with a FEM simulation of static loading test of the Omega beam. Omega beam is a precast prestressed high-performance concrete element with the shape of Greek letter omega. Omega beam was designed as a self-supporting permanent formwork member for construction of girder bridges. FEM program ATENA Science was exploited for simulation of load-bearing test of the beam. The numerical model was calibrated using the data from both static loading test and tests of material properties. Comparison of load-displacement diagrams obtained from the experiment and the model was conducted. Development of cracks and crack patterns were compared. Very good agreement of experimental data and the FEM model was reached. The calibrated model can be used for design of optimized Omega beams in the future without the need of expensive loading tests. The calibrated material model can be also exploited in other types of FEM analyses of bridges constructed with the use of Omega beams, such as limit state analysis, optimization of shear connectors, prediction of long-term deflections or prediction of crack development.

Simulation of the electron acoustic instability for a finite-size electron beam system

International Nuclear Information System (INIS)

Lin, C.S.; Winske, D.

1987-01-01

Satellite observations at midlatitudes (≅20,000 km) near the earth's dayside polar cusp boundary layer indicate that the upward electron beams have a narrow latitudinal width up to 0.1 0 . In the cusp boundary layer where the electron population consists of a finite-size electron beam in a background of uniform cold and hot electrons, the electron acoustic mode is unstable inside the electron beam but damped outside the electron beam. Simulations of the electron acoustic instability for a finite-size beam system are carried out with a particle-in-cell code to investigate the heating phenomena associated with the instability and the width of the heating region. The simulations show that the finite-size electron beam radiates electrostatic electron acoustic waves. The decay length of the electron acoustic waves outside the beam in the simulation agrees with the spatial decay length derived from the linear dispersion equation

Energy dependence of ion-induced sputtering yields from monoatomic solids at normal incidence

International Nuclear Information System (INIS)

Yamamura, Yasunori; Tawara, Hiro.

1995-03-01

The yields of the ion-induced sputtering from monoatomic solids at normal incidence for various ion-target combinations are presented graphically as a function of the incident ion energy. In order to fill the lack of the experimental data, the sputtering yields are also calculated by the Monte Carlo simulation code ACAT for some ion-target combinations. Each graph shows available experimental data points and the ACAT data, together with the sputtering yields calculated by the present empirical formula, whose parameters are determined by the best-fit to available data. (author)

Kinetic plasma simulation of ion beam extraction from an ECR ion source

International Nuclear Information System (INIS)

Elliott, S.M.; White, E.K.; Simkin, J.

2012-01-01

Designing optimized ECR (electron cyclotron resonance) ion beam sources can be streamlined by the accurate simulation of beam optical properties in order to predict ion extraction behavior. The complexity of these models, however, can make PIC-based simulations time-consuming. In this paper, we first describe a simple kinetic plasma finite element simulation of extraction of a proton beam from a permanent magnet hexapole ECR ion source. Second, we analyze the influence of secondary electrons generated by ion collisions in the residual gas on the space charge of a proton beam of a dual-solenoid ECR ion source. The finite element method (FEM) offers a fast modeling environment, allowing analysis of ion beam behavior under conditions of varying current density, electrode potential, and gas pressure. The new version of SCALA/TOSCA v14 permits the making of simulations in tens of minutes to a few hours on standard computer platforms without the need of particle-in-cell methods. The paper is followed by the slides of the presentation. (authors)

Fundamental properties of secondary negative ion emission by sputtering

International Nuclear Information System (INIS)

Shimizu, Toshiki; Tsuji, Hiroshi; Ishikawa, Junzo

1989-01-01

The report describes some results obtained from preliminary experiments on secondary negative ion emission from a cesiated surface by Xe-ion beam sputtering, which give the production probability. A measuring system is constructed for secondary negative ion emission. The system consists of a microwave ion source with a lens, a sputtering target holder with a heater, a cesium oven, a limiting aperture with a substrate for deposition, a negative-ion extractor and lens, and a ExB type mass separator. Observations are made on the dependence of negative ion current on cesium supply, dependence of negative ion current on target temperature, and negative ion production probability. The cesium supply and the target temperature are found to strongly influence the negative ion emission. By controlling these factors, the optimum condition for secondary negative ion emission is achieved with a minimum surface work function. The production probability of the negative ion is found to be very high, about 20% for carbon. Therefore, the secondary negative ion emission is considered a useful and highly efficient method to obtain high current ion beams. The constant in the Rasser's theoretical equation is experimentally determined to be 4.1 x 10 -4 eV sec/m. (N.K.)

Sputtering of water ice

International Nuclear Information System (INIS)

Baragiola, R.A.; Vidal, R.A.; Svendsen, W.; Schou, J.; Shi, M.; Bahr, D.A.; Atteberrry, C.L.

2003-01-01

We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from the decay of H(2p) atoms sputtered by heavy ion impact, but not bulk ice luminescence. Radiolyzed ice does not sputter under 3.7 eV laser irradiation

Molecular dynamics simulation of chemical sputtering of hydrogen atom on layer structured graphite

International Nuclear Information System (INIS)

Ito, A.; Wang, Y.; Irle, S.; Morokuma, K.; Nakamura, H.

2008-10-01

Chemical sputtering of hydrogen atom on graphite was simulated using molecular dynamics. Especially, the layer structure of the graphite was maintained by interlayer intermolecular interaction. Three kinds of graphite surfaces, flat (0 0 0 1) surface, armchair (1 1 2-bar 0) surface and zigzag (1 0 1-bar 0) surface, are dealt with as targets of hydrogen atom bombardment. In the case of the flat surface, graphene layers were peeled off one by one and yielded molecules had chain structures. On the other hand, C 2 H 2 and H 2 are dominant yielded molecules on the armchair and zigzag surfaces, respectively. In addition, the interaction of a single hydrogen isotope on a single graphene is investigated. Adsorption, reflection and penetration rates are obtained as functions of incident energy and explain hydrogen retention on layered graphite. (author)

Electronic sputtering

International Nuclear Information System (INIS)

Johnson, R.E.

1989-01-01

Electronic sputtering covers a range of phenomena from electron and photon stimulated desorption from multilayers to fast heavy ion-induced desorption (sputtering) of biomolecules. In this talk the author attempted. Therefore, to connect the detailed studies of argon ejection from solid argon by MeV ions and keV electrons to the sputtering of low temperatures molecular ices by MeV ions then to biomolecule ejection from organic solids. These are related via changing (dE/dx) e , molecular size, and transport processes occurring in materials. In this regard three distinct regions of (dE/dx) e have been identified. Since the talk this picture has been made explicit using a simple spike model for individual impulsive events in which spike interactions are combined linearly. Since that time also the molecular dynamics programs (at Virginia and Uppsala) have quantified both single atom and dimer processes in solid Ar and the momentum transport in large biomolecule sputtering. 5 refs

Progress on Beam-Plasma Effect Simulations in Muon Ionization Cooling Lattices

Energy Technology Data Exchange (ETDEWEB)

Ellison, James [IIT, Chicago; Snopok, Pavel [Fermilab

2017-05-01

New computational tools are essential for accurate modeling and simulation of the next generation of muon-based accelerators. One of the crucial physics processes specific to muon accelerators that has not yet been simulated in detail is beam-induced plasma effect in liquid, solid, and gaseous absorbers. We report here on the progress of developing the required simulation tools and applying them to study the properties of plasma and its effects on the beam in muon ionization cooling channels.

Simulations of beam trajectory for position target optimization of extraction system output beams cyclotron proton Decy-13

International Nuclear Information System (INIS)

Idrus Abdul Kudus; Taufik

2015-01-01

Positioning and track simulation beam the cyclotron Decy-13 for laying optimization the target system have been done using lorentz force function and scilab 5.4.1 simulation. Magnetic field and electric field is calculated using Opera3D/Tosca as a simulation input. Used radio frequency is 77.66 MHz with the amplitude voltage is 40 kV is obtained energy 13 MeV. The result showed that the coordinates of the laying of the target system in a vacuum chamber is located at x = -389 mm and y = 445 mm with the width of the output beam is 10 mm. The laying stripper position for the output in center target is located at x = -76 mm and y =416 mm from the center coordinate on the center of dee with the energy of proton is 13 MeV at the point of beam extraction carbon foil. The changes position laying is carried out on range x = -70; y = 424 mm until x = - 118; y = 374 mm result for shifting area stripper which is still capable of deflection the electron beam. (author)

Reactive sputter deposition

CERN Document Server

Mahieu, Stijn

2008-01-01

In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

H2 splitting on Pt, Ru and Rh nanoparticles supported on sputtered HOPG

DEFF Research Database (Denmark)

Fiordaliso, Elisabetta Maria; Murphy, Shane; Nielsen, R.M.

2012-01-01

The equilibrium hydrogen exchange rate between adsorbed and gas phase hydrogen at 1bar is measured for Pt, Ru and Rh nanoparticles supported on a sputtered HOPG substrate. The particles are prepared by Electron Beam Physical Vapor Deposition and the diameter of the particles varies between 2 and ...

Observing Planets and Small Bodies in Sputtered High Energy Atom (SHEA) Fluxes

Science.gov (United States)

Milillo, A.; Orsini, S.; Hsieh, K. C.; Baragiola, R.; Fama, M.; Johnson, R.; Mura, A.; Plainaki, Ch.; Sarantos, M.; Cassidy, T. A.;

Identification and roles of nonstoichiometric oxygen in amorphous Ta{sub 2}O{sub 5} thin films deposited by electron beam and sputtering processes

Energy Technology Data Exchange (ETDEWEB)

Mannequin, Cedric, E-mail: MANNEQUIN.Cedricromuald@nims.go.jp [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Tsuruoka, Tohru [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Hasegawa, Tsuyoshi [Department of Applied Physics, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Aono, Masakazu [International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

2016-11-01

Highlights: • A detail study of the composition and morphology of amorphous tantalum oxide films obtained by electron-beam evaporation and radio-frequency sputtering is carried out. • The mechanisms for moisture absorption by tantalum oxides are proposed. • Deposition-dependent high oxygen stoichiometry of the films is revealed. • Formations of dangling bonds, hydroxyls groups and bidendate water bridges are identified to support the moisture absorption. - Abstract: The morphology and composition of tantalum oxide (Ta{sub 2}O{sub 5}) thin films prepared by electron-beam (EB) evaporation and radio-frequency sputtering (SP) were investigated by grazing incidence X-ray diffraction (GIXRD), X-ray reflectometry (XRR), atomic force microscopy, Fourier transformed infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). GIXRD revealed an amorphous nature for both films, and XRR showed that the density of the Ta{sub 2}O{sub 5}-EB films was lower than that of the Ta{sub 2}O{sub 5}-SP films; both films have lower density than the bulk value. A larger amount of molecular water and peroxo species were detected for the Ta{sub 2}O{sub 5}-EB films by FTIR performed in ambient atmosphere. XPS analyses performed in vacuum confirmed the presence of hydroxyl groups, but no trace of chemisorbed molecular water was detected. In addition, a higher oxygen nonstoichiometry (higher O/Ta ratio) was found for the EB films. From these results, we conclude that the oxygen nonstoichiometry of the EB film accounted for its lower density and higher amount of absorbed molecular water. The results also suggest the importance of understanding the dependence of the structural and chemical properties of thin amorphous oxide films on the deposition process.

Transverse ratchet effect and superconducting vortices: simulation and experiment

International Nuclear Information System (INIS)

Dinis, L; Parrondo, J M R; Perez de Lara, D; Gonzalez, E M; Vicent, J L; Anguita, J V

2009-01-01

A transverse ratchet effect has been measured in magnetic/superconducting hybrid films fabricated by electron beam lithography and magnetron sputtering techniques. The samples are Nb films grown on top of an array of Ni nanotriangles. Injecting an ac current parallel to the triangle reflection symmetry axis yields an output dc voltage perpendicular to the current, due to a net motion of flux vortices in the superconductor. The effect is reproduced by numerical simulations of vortices as Langevin particles with realistic parameters. Simulations provide an intuitive picture of the ratchet mechanism, revealing the fundamental role played by the random intrinsic pinning of the superconductor.

A high-intensity plasma-sputter heavy negative ion source

International Nuclear Information System (INIS)

Alton, G.D.; Mori, Y.; Takagi, A.; Ueno, A.; Fukumoto, S.

1989-01-01

A multicusp magnetic field plasma surface ion source, normally used for H/sup /minus//ion beam formation, has been modified for the generation of high-intensity, pulsed, heavy negative ion beams suitable for a variety of uses. To date, the source has been utilized to produce mA intensity pulsed beams of more than 24 species. A brief description of the source, and basic pulsed-mode operational data, (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure), are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low discharge power conditions suggest that sources of this type may also be used to produce high-intensity (mA) dc beams. The results of these investigations are given, as well, and the technical issues that must be addressed for this mode of operation are discussed. 15 refs., 10 figs., 2 tabs

Simulation of effects of incident beam condition in p-p elastic scattering

International Nuclear Information System (INIS)

Yu Lei; Zhang Gaolong; Le Xiaoyun; Tanihata, I.

2014-01-01

The simulation is performed for the monitors of beam direction and beam position for p-p elastic scattering. We set several variables to simulate the monitors of incident beam condition changes: beam positions at the quadrupole magnet and target in beam line polarimeter (BLP2), distance between quadrupole magnet and target, size of plastic scintillators, distance between the target in BLP2 and the centers of plastic scintillators, and beam polarization. Through the rotation of the coordinate system, the distributions of scattered and recoiled protons in the laboratory system were obtained. By analyzing the count yields in plastic scintillators at different beam positions, we found that the beam incident angular change (0.35°) could be detected when the asymmetry of geometries of left and right scintillators in BLP2 was changed by 6%. Therefore, the scattering angle measured in the experiment can be tracked by these monitors. (authors)

SU-D-BRC-01: An Automatic Beam Model Commissioning Method for Monte Carlo Simulations in Pencil-Beam Scanning Proton Therapy

Energy Technology Data Exchange (ETDEWEB)

Qin, N; Shen, C; Tian, Z; Jiang, S; Jia, X [UT Southwestern Medical Ctr, Dallas, TX (United States)

2016-06-15

Purpose: Monte Carlo (MC) simulation is typically regarded as the most accurate dose calculation method for proton therapy. Yet for real clinical cases, the overall accuracy also depends on that of the MC beam model. Commissioning a beam model to faithfully represent a real beam requires finely tuning a set of model parameters, which could be tedious given the large number of pencil beams to commmission. This abstract reports an automatic beam-model commissioning method for pencil-beam scanning proton therapy via an optimization approach. Methods: We modeled a real pencil beam with energy and spatial spread following Gaussian distributions. Mean energy, and energy and spatial spread are model parameters. To commission against a real beam, we first performed MC simulations to calculate dose distributions of a set of ideal (monoenergetic, zero-size) pencil beams. Dose distribution for a real pencil beam is hence linear superposition of doses for those ideal pencil beams with weights in the Gaussian form. We formulated the commissioning task as an optimization problem, such that the calculated central axis depth dose and lateral profiles at several depths match corresponding measurements. An iterative algorithm combining conjugate gradient method and parameter fitting was employed to solve the optimization problem. We validated our method in simulation studies. Results: We calculated dose distributions for three real pencil beams with nominal energies 83, 147 and 199 MeV using realistic beam parameters. These data were regarded as measurements and used for commission. After commissioning, average difference in energy and beam spread between determined values and ground truth were 4.6% and 0.2%. With the commissioned model, we recomputed dose. Mean dose differences from measurements were 0.64%, 0.20% and 0.25%. Conclusion: The developed automatic MC beam-model commissioning method for pencil-beam scanning proton therapy can determine beam model parameters with

Particle dynamics during electronic sputtering of solid krypton

DEFF Research Database (Denmark)

Dutkiewicz, L.; Pedrys, R.; Schou, Jørgen

1995-01-01

We have modeled electronic sputtering of solid krypton by excimer production with molecular dynamics. Both excimer evolution in the solid and deexcitation processes have been incorporated in the simulation. The excimer dynamics in the lattice has been analyzed: the excimers formed near the surface...

Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films

Directory of Open Access Journals (Sweden)

Chun-Min Wang

2015-08-01

Full Text Available Tin oxide (SnO2—x thin films were prepared under various flow ratios of O2/(O2 + Ar on unheated glass substrate using the ion beam sputtering (IBS deposition technique. This work studied the effects of the flow ratio of O2/(O2 + Ar, chamber pressures and post-annealing treatment on the physical properties of SnO2 thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD and transmission electron microscopy (TEM analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM. Auger electron spectroscopy (AES analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

Simulation on a limited angle beam gamma ray tomography

Energy Technology Data Exchange (ETDEWEB)

Kim, Jong Bum; Jung, Sung Hee; Moon, Jin Ho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2010-10-15

Limited angle beam tomography was introduced in the medical field more than two decades ago, where it was mainly used for cardiovascular diagnostics. Later, it was also used to trace multiphase flows. In these studies, the detection systems were fixed and a scanning electron beam was rapidly swept across an xray target using deflection coils. Thus very fast scanning was possible in these studies, but their geometry resulted in a heavy and bulky system because of a complex control system and vacuum tube. Because of its heavy hardware, limited angle beam tomography has remained as indoor equipment. If the source section is replaced by a gamma ray source, limited angle beam tomography will have a very light source device. In addition, limited angle beam tomography with a gamma ray source can be designed using an open type portable gantry because it does not need a vacuum guide for an electron beam. There is a lot of need for a portable tomographic system but so far no definitive solution has been created. The inspection of industrial on-line pipes, wood telephone poles, and cultural assets are some application areas. This study introduces limited angle beam gamma ray tomography, its simulation, and image reconstruction results. Image reconstruction was performed on the virtual experimental data from a Monte Carlo simulation. Image reconstruction algorithms that are known to be useful for limited angle data were applied and their results compared

Modeling and analysis of surface roughness effects on sputtering, reflection, and sputtered particle transport

International Nuclear Information System (INIS)

Brooks, J.N.; Ruzic, D.N.

1990-01-01

The microstructure of the redeposited surface in tokamaks may affect sputtering and reflection properties and subsequent particle transport. This subject has been studied numerically using coupled models/codes for near-surface plasma particle kinetic transport (WBC code) and rough surface sputtering (fractal-TRIM). The coupled codes provide an overall Monte Carlo calculation of the sputtering cascade resulting from an initial flux of hydrogen ions. Beryllium, carbon, and tungsten surfaces are analyzed for typical high recycling, oblique magnetic field, divertor conditions. Significant variations in computed sputtering rates are found with surface roughness. Beryllium exhibits high D-T and self-sputtering coefficients for the plasma regime studied (T e = 30-75 eV). Carbon and tungsten sputtering is significantly lower. 9 refs., 6 figs., 1 tab

Characterization of leached surface layers on simulated high-level waste glasses by sputter-induced optical emission

International Nuclear Information System (INIS)

Houser, C.; Tsong, I.S.T.; White, W.B.

1979-01-01

The leaching process in simulated waste encapsulant glasses was studied by measuring the compositional depth-profiles of H (from water), the glass framework formers Si and B, the alkalis Na and Cs, the alkaline earths Ca and Sr, the transition metals Mo and Fe, the rare-earths La, Ce, and Nd, using the technique of sputter-induced optical emission. The leaching process of these glasses is highly complex. In addition to alkali/hydrogen exchange, there is breakdown of the glass framework, build-up of barrier layers on the surface, and formation of layered reaction zones of distinctly different chemistry all within the outer micrometer of the glass

Nanoscale pattern formation at surfaces under ion-beam sputtering: A perspective from continuum models

International Nuclear Information System (INIS)

Cuerno, Rodolfo; Castro, Mario; Munoz-Garcia, Javier; Gago, Raul; Vazquez, Luis

2011-01-01

Although reports on surface nanostructuring of solid targets by low to medium energy ion irradiation date back to the 1960s, only with the advent of high resolution tools for surface/interface characterization has the high potential of this procedure been recognized as a method for efficient production of surface patterns. Such morphologies are made up of periodic arrangements of nanometric sized features, like ripples and dots, with interest for technological applications due to their electronic, magnetic, and optical properties. Thus, roughly for the last ten years large efforts have been directed towards harnessing this nanofabrication technique. However, and particularly in view of recent experimental developments, we can say that the basic mechanisms controlling these pattern formation processes remain poorly understood. The lack of nanostructuring at low angles of incidence on some pure monoelemental targets, the role of impurities in the surface dynamics and other recent observations are challenging the classic view on the phenomenon as the mere interplay between the curvature dependence of the sputtering yield and surface diffusion. We review the main attempts at a theoretical (continuum) description of these systems, with emphasis on recent developments. Strong hints already exist that the nature of the morphological instability has to be rethought as originating in the material flow that is induced by the ion beam.

Computer simulations of electromagnetic cool ion beam instabilities. [in near earth space

Science.gov (United States)

Gary, S. P.; Madland, C. D.; Schriver, D.; Winske, D.

1986-01-01

Electromagnetic ion beam instabilities driven by cool ion beams at propagation parallel or antiparallel to a uniform magnetic field are studied using computer simulations. The elements of linear theory applicable to electromagnetic ion beam instabilities and the simulations derived from a one-dimensional hybrid computer code are described. The quasi-linear regime of the right-hand resonant ion beam instability, and the gyrophase bunching of the nonlinear regime of the right-hand resonant and nonresonant instabilities are examined. It is detected that in the quasi-linear regime the instability saturation is due to a reduction in the beam core relative drift speed and an increase in the perpendicular-to-parallel beam temperature; in the nonlinear regime the instabilities saturate when half the initial beam drift kinetic energy density is converted to fluctuating magnetic field energy density.

Fundamental aspects of cathodic sputtering

International Nuclear Information System (INIS)

Harman, R.

1979-01-01

The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

Numerical Simulation and Mechanical Design for TPS Electron Beam Position Monitors

Science.gov (United States)

Hsueh, H. P.; Kuan, C. K.; Ueng, T. S.; Hsiung, G. Y.; Chen, J. R.

2007-01-01

Comprehensive study on the mechanical design and numerical simulation for the high resolution electron beam position monitors are key steps to build the newly proposed 3rd generation synchrotron radiation research facility, Taiwan Photon Source (TPS). With more advanced electromagnetic simulation tool like MAFIA tailored specifically for particle accelerator, the design for the high resolution electron beam position monitors can be tested in such environment before they are experimentally tested. The design goal of our high resolution electron beam position monitors is to get the best resolution through sensitivity and signal optimization. The definitions and differences between resolution and sensitivity of electron beam position monitors will be explained. The design consideration is also explained. Prototype deign has been carried out and the related simulations were also carried out with MAFIA. The results are presented here. Sensitivity as high as 200 in x direction has been achieved in x direction at 500 MHz.

Numerical Simulation and Mechanical Design for TPS Electron Beam Position Monitors

International Nuclear Information System (INIS)

Hsueh, H. P.; Kuan, C. K.; Ueng, T. S.; Hsiung, G. Y.; Chen, J. R.

2007-01-01

Comprehensive study on the mechanical design and numerical simulation for the high resolution electron beam position monitors are key steps to build the newly proposed 3rd generation synchrotron radiation research facility, Taiwan Photon Source (TPS). With more advanced electromagnetic simulation tool like MAFIA tailored specifically for particle accelerator, the design for the high resolution electron beam position monitors can be tested in such environment before they are experimentally tested. The design goal of our high resolution electron beam position monitors is to get the best resolution through sensitivity and signal optimization. The definitions and differences between resolution and sensitivity of electron beam position monitors will be explained. The design consideration is also explained. Prototype deign has been carried out and the related simulations were also carried out with MAFIA. The results are presented here. Sensitivity as high as 200 in x direction has been achieved in x direction at 500 MHz

X-ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition

International Nuclear Information System (INIS)

Nelson, A.J.; Aharoni, H.

1987-01-01

X-ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O 2 partial pressure during deposition. The oxygen partial pressure was varied over the range of 2.5 x 10 -6 --4.0 x 10 -5 Torr. Changes in composition as well as in the deconvoluted In 3d 5 /sub // 2 , Sn 3d 5 /sub // 2 , and O 1s core level spectra were observed and correlated with the variation of the oxygen partial pressure during deposition. Results show that the films become increasingly stoichiometric as P/sub =/ is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In--O bonding

Uniform elemental analysis of materials by sputtering and photoionization mass spectrometry

International Nuclear Information System (INIS)

Chun, He; Basler, J.N.; Becker, C.H.

1997-01-01

Analysis of the elemental composition of surfaces commonly involves techniques in which atoms or ions are ablated from the material's surface and detected by mass spectrometry. Secondary-ion mass spectrometry is widely used for detection with high sensitivity (down to a few parts per billion) but technical problems prevent it from being truly quantitative. Some of these problems are circumvented by nonresonant laser post-ionization of sputtered atoms followed by time-of-flight mass spectrometry (surface analysis by laser ionization: SALI). But when there are large differences in ionization probabilities amongst different elements in the material, the detection sensitivity can be non-uniform and accurate quantification remains out of reach. Here we report that highly uniform, quantitative and sensitive analysis of materials can be achieved using a high-energy (5-keV) ion beam for sputtering coupled with a very-high-intensity laser to induce multiphoton ionization of the sputtered atoms. We show uniform elemental sensitivity for several samples containing elements with very different ionization potentials, suggesting that this approach can now be regarded as quantitative for essentially any material. (author)

Simulations relevant to the beam instability in the foreshock

International Nuclear Information System (INIS)

Cairns, I.H.; Nishikawa, K.I.

1989-01-01

Electrons backstreaming into Earth's foreshock generate waves near the plasma frequency f p by the beam instability. Tow versions of the beam instability exist: the reactive version, in which narrow-band waves grow by bunching the electrons in space, and the kinetic version, in which broadband growth occurs by a maser mechanism. Recently, it has been suggested that (1) the backstreaming electrons have steep-sided cutoff distributions which are initially unstable to the reactive instability, (2) the back reaction to the wave growth causes the instability to pass into its kinetic phase, and (3) the kinetic instability saturates by quasi-linear relaxation. In this paper the authors present two-dimensional simulations of the reactive instability for Maxwellian beams and cutoff distributions. They demonstrate that the reactive instability is a bunching instability and that the reactive instability saturates and passes over into the kinetic phase by particle trapping.A reactive/kinetic transition is shown to most likely occur within 1 km and 50 km of the bow shock. They suggest that the frequency of the intense narrow-band waves decrease from above f p to perhaps 0.9f p (dependent on the beam density) with increasing penetration into the high beam speed region of the foreshock, before the wave frequency rises again as the waves become broadband deeper in the foreshock. Both the simulation results and numerical solutions of the dispersion equation indicate that for the observed beam parameters the center frequency of the waves near the foreshock boundary should be between 0.9f p and 0.98f p , rather than above f p as previously believed. The simulation results indicate that the effects of spatial inhomogeneity are vital for a quantitative understanding of the foreshock waves

Sputtering from swift-ion trails in LiF: A hybrid PIC/MD simulation

Energy Technology Data Exchange (ETDEWEB)

Cherednikov, Yaroslav; Sun, Si Neng; Urbassek, Herbert M., E-mail: urbassek@rhrk.uni-kl.de

2013-11-15

We model the sputtering of a LiF crystal induced by swift-ion impact. The impinging ion creates a trail of doubly ionized F{sup +} ions, while simultaneously the corresponding electrons are set free. Ions move according to molecular dynamics, while excited electrons are treated by a particle-in-cell scheme. We treat the recombination time of electrons as a free parameter in our model. We find that the energy distribution of sputtered ions consists of 2 groups: a low-energy group centered at <1 eV, and a high-energy group at 7–8 eV. Fast ions (mainly Li{sup +}) are emitted early; these charge the surface negatively. Later, larger cluster ions and also neutral LiF molecules are emitted. Emission occurs at low angles to the surface normal. A jet along the normal direction can be observed, which is due to the electric field building up at the track surface. With increasing recombination time, processes are colder; sputtering decreases and the non-thermal jet structure becomes stronger.

Implantation, recoil implantation, and sputtering

International Nuclear Information System (INIS)

Kelly, R.

1984-01-01

Underlying ion-beam modification of surfaces is the more basic subject of particle-surface interaction. The ideas can be grouped into forward and backward features, i.e. those affecting the interior of the target and those leading to particle expulsion. Forward effects include the stopping of the incident particles and the deposition of energy, both governed by integral equations which are easily set up but difficult to solve. Closely related is recoil implantation where emphasis is placed not on the stopping of the incident particles but on their interaction with target atoms with resulting implantation of these atoms. Backward effects, all of which are denoted as sputtering, are in general either of collisional, thermal, electronic, or exfoliational origin. (Auth.)

Monte Carlo simulation of small field electron beams for small animal irradiation

International Nuclear Information System (INIS)

Lee, Chung-Chi; Chen, Ai-Mei; Tung, Chuan-Jong; Chao, Tsi-Chian

2011-01-01

The volume effect of detectors in the dosimetry of small fields for photon beams has been well studied due to interests in radiosurgery and small beamlets used in IMRT treatments; but there is still an unexplored research field for small electron beams used in small animal irradiation. This study proposes to use the BEAM Monte Carlo (MC) simulation to assess characteristics of small electron beams (4, 6, 14, 30 mm in diameter) with the kinetic energies of 6 and 18 MeV. Three factors influencing beam characteristics were studied (1) AE and ECUT settings, (2) photon jaw settings and (3) simulation pixel sizes. Study results reveal that AE/ECUT settings at 0.7 MeV are adequate for linear accelerator treatment head simulation, while 0.521 MeV is more favorable to be used for the phantom study. It is also demonstrated that voxel size setting at 1/4 of the simulation field width in all directions is sufficient to achieve accurate results. As for the photon jaw setting, it has great impact on the absolute output of different field size setting (i.e. output factor) but with minimum effect on the relative lateral distribution.

Beam Delivery Simulation: BDSIM - Development & Optimization

CERN Document Server

Nevay, Laurence James; Garcia-Morales, H; Gibson, S M; Kwee-Hinzmann, R; Snuverink, J; Deacon, L C

2014-01-01

Beam Delivery Simulation (BDSIM) is a Geant4 and C++ based particle tracking code that seamlessly tracks particles through accelerators and detectors, including the full range of particle interaction physics processes from Geant4. BDSIM has been successfully used to model beam loss and background conditions for many current and future linear accelerators such as the Accelerator Test Facility 2 (ATF2) and the International Linear Collider (ILC). Current developments extend its application for use with storage rings, in particular for the Large Hadron Collider (LHC) and the High Luminosity upgrade project (HL-LHC). This paper presents the latest results from using BDSIM to model the LHC as well as the developments underway to improve performance.

Numerical simulation on beam breakup unstability of linear induction accelerator

International Nuclear Information System (INIS)

Zhang Kaizhi; Wang Huacen; Lin Yuzheng

2003-01-01

A code is written to simulate BBU in induction linac according to theoretical analysis. The general form of evolution of BBU in induction linac is investigated at first, then the effect of related parameters on BBU is analyzed, for example, the alignment error, oscillation frequency of beam centroid, beam pulse shape and acceleration gradient. At last measures are put forward to damp beam breakup unstability (BBU)

Effect of flexural crack on plain concrete beam failure mechanism A numerical simulation

Directory of Open Access Journals (Sweden)

Abdoullah Namdar

2016-03-01

Full Text Available The flexural failure of plain concrete beam occurs along with development of flexural crack on beam. In this paper by using ABAQUS, mechanism failure of plain concrete beam under three steps have been simulated. The cracking moment has been analytically calculated and applied on the both sides of the fixed beam, and flexural crack has been simulated on beam. Displacement, von Mises, load reaction, displacementcrack length, von Mises-crack length and von Mises-displacement of beams have been graphical depicted. Results indicated that, the flexural crack governs beam mechanism failure and its effects on beam resistance failure. It has been found that the flexural crack in initial stage it developed slowly and changes to be fast at the final stage of collapsing beam due to reduction of the flexural resistance of beam. Increasing mechanical properties of concrete, collapse displacement is reduced.

Development of high-polarization Fe/Ge neutron polarizing supermirror: Possibility of fine-tuning of scattering length density in ion beam sputtering

Science.gov (United States)

Maruyama, R.; Yamazaki, D.; Akutsu, K.; Hanashima, T.; Miyata, N.; Aoki, H.; Takeda, M.; Soyama, K.

2018-04-01

The multilayer structure of Fe/Si and Fe/Ge systems fabricated by ion beam sputtering (IBS) was investigated using X-ray and polarized neutron reflectivity measurements and scanning transmission electron microscopy with energy-dispersive X-ray analysis. The obtained result revealed that the incorporation of sputtering gas particles (Ar) in the Ge layer gives rise to a marked reduction in the neutron scattering length density (SLD) and contributes to the SLD contrast between the Fe and Ge layers almost vanishing for spin-down neutrons. Bundesmann et al. (2015) have shown that the implantation of primary Ar ions backscattered at the target is responsible for the incorporation of Ar particles and that the fraction increases with increasing ion incidence angle and increasing polar emission angle. This leads to a possibility of fine-tuning of the SLD for the IBS, which is required to realize a high polarization efficiency of a neutron polarizing supermirror. Fe/Ge polarizing supermirror with m = 5 fabricated under the same condition showed a spin-up reflectivity of 0.70 at the critical momentum transfer. The polarization was higher than 0.985 for the qz range where the correction for the polarization inefficiencies of the beamline works properly. The result of the polarized neutron reflectivity measurement suggests that the "magnetically-dead" layers formed at both sides of the Fe layer, together with the SLD contrast, play a critical role in determining the polarization performance of a polarizing supermirror.

Beam Dynamics Simulations of the REX-ISOLDE A/q-separator

CERN Document Server

Fraser, M A; Wenander, F

2014-01-01

The REX-ISOLDE A=q-separator selects the radioactive species of interest from the background of residual gas ions coming from the EBIS ion source. In the context of the HIE-ISOLDE upgrade, including the implementation of a multi-harmonic buncher and an upgraded EBIS, the separator and the beam line between the EBIS and RFQ, which we will call the Low Energy Beam Transfer (LEBT) line, has been simulated by tracking particles through the field maps of each active element using the TRACK [4] code. The simulations were benchmarked with a COSY-1 model that was improved to take into account the fringe fields of the electrostatic quadrupoles, electrostatic deflector and magnetic bender; the model can be used to tune and optimise the separator with higher-order effects taken into account. In this note the beam dynamics simulations are documented and the transverse and longitudinal acceptance of the separator line studied to provide design constraints for the EBIS upgrade.

Ions extraction and collection using the RF resonance method and taking into consideration the sputtering loss

International Nuclear Information System (INIS)

Xie Guofeng; Wang Dewu; Ying Chuntong

2005-01-01

One-dimensional ions extraction and collection using the RF resonance method is studied by PIC-MCC simulation. The energy and angle distribution of extracted ions is recorded and the sputtering loss is calculated. The results show that compared with parallel electrode method, RF resonance method has advantages such as shorter extraction time, lower collision loss and sputtering loss and higher collection ratio; the extraction time and collision loss are decreased with increasing extraction voltage, but the sputtering loss increases and collection ratio decreases; collision loss is decreased with increasing magnetic field, but the sputtering loss increases and collection ratio decreases. (authors)

Simulation and modeling of the Gamble II self-pinched ion beam transport experiment

International Nuclear Information System (INIS)

Rose, D.V.; Ottinger, P.F.; Hinshelwood, D.D.

1999-01-01

Progress in numerical simulations and modeling of the self-pinched ion beam transport experiment at the Naval Research Laboratory (NRL) is reviewed. In the experiment, a 1.2-MeV, 100-kA proton beam enters a 1-m long, transport region filled with a low pressure gas (30--250 mTorr helium, or 1 Torr air). The time-dependent velocity distribution function of the injected ion beam is determined from an orbit code that uses a pinch-reflex ion diode model and the measured voltage and current from this diode on the Gamble II generator at NRL. This distribution function is used as the beam input condition for numerical simulations carried out using the hybrid particle-in-cell code IPROP. Results of the simulations will be described, and detailed comparisons will be made with various measurements, including line-integrated electron-density, proton-fluence, and beam radial-profile measurements. As observed in the experiment, the simulations show evidence of self-pinching for helium pressures between 35 and 80 mTorr. Simulations and measurements in 1 Torr air show ballistic transport. The relevance of these results to ion-driven inertial confinement fusion will be discussed

Simulations of multistage intense ion beam acceleration

International Nuclear Information System (INIS)

Slutz, S.A.; Poukey, J.W.

1992-01-01

An analytic theory for magnetically insulated, multistage acceleration of high intensity ion beams, where the diamagnetic effect due to electron flow is important, has been presented by Slutz and Desjarlais. The theory predicts the existence of two limiting voltages called V 1 (W) and V 2 (W), which are both functions of the injection energy qW of ions entering the accelerating gap. As the voltage approaches V 1 (W), unlimited beam-current density can penetrate the gap without the formation of a virtual anode because the dynamic gap goes to zero. Unlimited beam current density can penetrate an accelerating gap above V 2 (W), although a virtual anode is formed. It was found that the behavior of these limiting voltages is strongly dependent on the electron density profile. The authors have investigated the behavior of these limiting voltages numerically using the 2-D particle-in-cell (PIC) code MAGIC. Results of these simulations are consistent with the superinsulated analytic results. This is not surprising, since the ignored coordinate eliminates instabilities known to be important from studies of single stage magnetically insulated ion diodes. To investigate the effect of these instabilities the authors have simulated the problem with the 3-D PIC code QUICKSILVER, which indicates behavior that is consistent with the saturated model

Long-range beam-beam interactions in the Tevatron: Comparing simulation to tune shift data

International Nuclear Information System (INIS)

Saritepe, S.; Michelotti, L.; Peggs, S.

1990-07-01

Fermilab upgrade plans for the collider operation include a separation scheme in the Tevatron, in which protons and antiprotons are placed on separate helical orbits. The average separation distance between the closed orbits will be 5σ (σ of the proton bunch) except at the interaction regions, B0 and D0, where they collide head-on. The maximum beam-beam total tune shift in the Tevatron is approximately 0.024 (the workable tune space between 5th and 7th order resonances), which was reached in the 1988--1989 collider tun. Helical separation scheme allows us to increase the luminosity by reducing the total beam-beam tune shift. The number of bunches per beam will be 6 in the 1991 collider tun, to be increased to 36 in the following collider runs. To test the viability of this scenario, helical orbit studies are being conducted. The most recent studies concentrated on the injection of 36 proton bunches, procedures related to opening and closing of the helix, the feed-down circuits and the beam-beam interaction. In this paper, we present the results of the beam-beam interaction studies only. Our emphasis is on the tune shift measurements and the comparison to simulation. 4 refs., 9 figs., 2 tabs

An interactive beam position monitor system simulator

International Nuclear Information System (INIS)

Ryan, W.A.; Shea, T.J.

1993-03-01

A system simulator has been implemented to aid the development of the RHIC position monitor system. Based on the LabVIEW software package by National Instruments, this simulator allows engineers and technicians to interactively explore the parameter space of a system during the design phase. Adjustable parameters are divided into three categories: beam, pickup, and electronics. The simulator uses these parameters in simple formulas to produce results in both time-domain and frequencydomain. During the prototyping phase, these simulated results can be compared to test data acquired with the same software package. The RHIC position monitor system is presented as an example, but the software is applicable to several other systems as well

Influence of the atomic structure on the quantum state of sputtered Ir atoms

International Nuclear Information System (INIS)

Bastiaansen, J.; Philipsen, V.; Lievens, P.; Silverans, R.E.; Vandeweert, E.

2004-01-01

The probability of the ejection of a neutral atom in a specific quantum state after keV-ion beam sputtering is often interpreted in terms of the interaction between the atomic states of the escaping atom and the electronic states of the solid. In this work, we examined this interplay in the sputtering of iridium as this element has--unlike the elements employed in previous investigations--a complex atomic structure due to strong configuration interactions. Double-resonant two-photon laser ionization is used to probe the sputtered Ir atoms yielding information about the probability for an ejected atom to populate a specific atomic state and its escape velocity. The qualitative features of the corresponding population partition and state-selective velocity distributions show the influence of the excitation energy and the electronic structure of the different atomic states. A comparison is made between the experimental data and predictions from the resonant electron transfer description

Characterization of Niobium Oxide Films Deposited by High Target Utilization Sputter Sources

International Nuclear Information System (INIS)

Chow, R; Ellis, A D; Loomis, G E; Rana, S I

2007-01-01

High quality, refractory metal, oxide coatings are required in a variety of applications such as laser optics, micro-electronic insulating layers, nano-device structures, electro-optic multilayers, sensors and corrosion barriers. A common oxide deposition technique is reactive sputtering because the kinetic mechanism vaporizes almost any solid material in vacuum. Also, the sputtered molecules have higher energies than those generated from thermal evaporation, and so the condensates are smoother and denser than those from thermally-evaporated films. In the typical sputtering system, target erosion is a factor that drives machine availability. In some situations such as nano-layered capacitors, where the device's performance characteristics depends on thick layers, target life becomes a limiting factor on the maximizing device functionality. The keen interest to increase target utilization in sputtering has been addressed in a variety of ways such as target geometry, rotating magnets, and/or shaped magnet arrays. Also, a recent sputtering system has been developed that generates a high density plasma, directs the plasma beam towards the target in a uniform fashion, and erodes the target in a uniform fashion. The purpose of this paper is to characterize and compare niobia films deposited by two types of high target utilization sputtering sources, a rotating magnetron and a high density plasma source. The oxide of interest in this study is niobia because of its high refractive index. The quality of the niobia films were characterized spectroscopically in optical transmission, ellipsometrically, and chemical stoichiometry with X-ray photo-electron spectroscopy. The refractive index, extinction coefficients, Cauchy constants were derived from the ellipsometric modeling. The mechanical properties of coating density and stress are also determined

Geometric considerations in magnetron sputtering

International Nuclear Information System (INIS)

Thornton, J.A.

1982-01-01

The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

Ga lithography in sputtered niobium for superconductive micro and nanowires

International Nuclear Information System (INIS)

Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

2014-01-01

This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12 nm deep with a 14 nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10 μm by 10 μm and 100 μm by 100 μm, demonstrate that doses above than 7.5 × 10 15  cm −2 at 30 kV provide adequate mask protection for a 205 nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75 nm wide by 10 μm long connected to 50 μm wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T c ) = 7.7 K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

Tabulated square-shaped source model for linear accelerator electron beam simulation.

Science.gov (United States)

Khaledi, Navid; Aghamiri, Mahmood Reza; Aslian, Hossein; Ameri, Ahmad

2017-01-01

Using this source model, the Monte Carlo (MC) computation becomes much faster for electron beams. The aim of this study was to present a source model that makes linear accelerator (LINAC) electron beam geometry simulation less complex. In this study, a tabulated square-shaped source with transversal and axial distribution biasing and semi-Gaussian spectrum was investigated. A low energy photon spectrum was added to the semi-Gaussian beam to correct the bremsstrahlung X-ray contamination. After running the MC code multiple times and optimizing all spectrums for four electron energies in three different medical LINACs (Elekta, Siemens, and Varian), the characteristics of a beam passing through a 10 cm × 10 cm applicator were obtained. The percentage depth dose and dose profiles at two different depths were measured and simulated. The maximum difference between simulated and measured percentage of depth doses and dose profiles was 1.8% and 4%, respectively. The low energy electron and photon spectrum and the Gaussian spectrum peak energy and associated full width at half of maximum and transversal distribution weightings were obtained for each electron beam. The proposed method yielded a maximum computation time 702 times faster than a complete head simulation. Our study demonstrates that there was an excellent agreement between the results of our proposed model and measured data; furthermore, an optimum calculation speed was achieved because there was no need to define geometry and materials in the LINAC head.

Influence of the surface topography, morphology and structure on magnetic properties of ion beam sputtered iron layers, Fe/Cr/Fe- and Fe/MgO/Fe multilayers; Untersuchung der Morphologie und magnetische Eigenschaften von ionenstrahl-gesputterten Eisen-Einzelschichten, Fe/Cr/Fe- und Fe/MgO/Fe-Schichtsystemen

Energy Technology Data Exchange (ETDEWEB)

Steeb, Alexandra

2007-04-05

In this PhD Thesis, the influence of the surface topography, morphology and structure on magnetic properties of ion beam sputtered iron layers on GaAs is examined. To analyze the structure of the produced iron films, low energy electron diffraction and scanning tunneling microscopy is employed. The utilized methods to investigate the magnetic properties are Kerr- and SQUID-magnetometry and ferromagnetic resonance. It is demonstrated that on untreated as well as on presputtered and heated GaAs substrates the sputtered iron films grow epitaxially. The least surface roughness of 1 A exhibit iron films grown on untreated GaAs, while iron films on heated GaAs have the highest roughness of 30 A. The largest crystal anisotropy constant is found for the presputtered GaAs/Fe-System. For this preparation method, two monolayers of iron are determined to be magnetically dead layers. At a film thickness of 100 A, 83% of the value for saturation magnetization of bulk iron are achieved. The small observed FMR-linewidths confirm the good bulk properties of the ion beam sputtered iron. Furthermore, an antiferromagnetic interlayer exchange coupling in sputtered Fe/Cr/Fe-films was achieved. For a thickness of 12 to 17 A of the chrome interlayer, a coupling strength up to 0.2 mJ/m{sup 2} is found. To account for the small coupling strength, a strong intermixing at the interface is assumed. Finally, epitaxial Fe/MgO/Fe/FeMn multilayers are deposited on GaAs. After the structuring, it is possible to detect tunneling processes in the tunneling contacts with current-voltage measurements. The tunnel magneto resistance values of 2% are small, which can be explained by the absence of sharp, well-defined interfaces between the Fe/FeMn and the Fe/MgO interfaces. These results demonstrate, that analog to MBE the ion beam sputtering method realizes good magnetic bulk properties. However, interface sensitive phenomena are weakened because of a strong intermixing at the interfaces. (orig.)

Growth stress buildup in ion beam sputtered Mo thin films and comparative study of stress relaxation upon thermal annealing or ion irradiation

International Nuclear Information System (INIS)

Debelle, A.; Abadias, G.; Michel, A.; Jaouen, C.; Pelosin, V.

2007-01-01

In an effort to address the understanding of the origin of growth stress in thin films deposited under very energetic conditions, the authors investigated the stress state and microstructure of Mo thin films grown by ion beam sputtering (IBS) as well as the stress relaxation processes taking place during subsequent thermal annealing or ion irradiation. Different sets of samples were grown by varying the IBS deposition parameters, namely, the energy E 0 and the flux j of the primary ion beam, the target-to-sputtering gas mass ratio M 1 /M 2 as well as film thickness. The strain-stress state was determined by x-ray diffraction using the sin 2 ψ method and data analyzed using an original stress model which enabled them to correlate information at macroscopic (in terms of stress) and microscopic (in terms of defect concentration) levels. Results indicate that these refractory metallic thin films are characterized by a high compressive growth stress (-2.6 to -3.8 GPa), resulting from the creation of a large concentration (up to ∼1.4%) of point or cluster defects, due to the atomic peening mechanism. The M 1 /M 2 mass ratio enables tuning efficiently the mean deposited energy of the condensing atoms; thus, it appears to be the more relevant deposition parameter that allows modifying both the microstructure and the stress level in a significant way. The growth stress comes out to be highly unstable. It can be easily relaxed either by postgrowth thermal annealing or ion irradiation in the hundred keV range at very low dose [<0.1 dpa (displacement per atom)]. It is shown that thermal annealing induces deleterious effects such as oxidation of the film surface, decrease of the film density, and in some cases adhesion loss at the film/substrate interface, while ion irradiation allows controlling the stress level without generating any macroscopic damage

Sputtering. [as deposition technique in mechanical engineering

Science.gov (United States)

Spalvins, T.

1976-01-01

This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

Low-temperature growth of (2 1-bar 1-bar 0) ZnO nanofilm on NaCl (0 0 1) surface by ion beam sputtering

International Nuclear Information System (INIS)

Shen, Jung-Hsiung; Yeh, Sung-Wei; Huang, Hsing-Lu; Gan, Dershin

2009-01-01

ZnO nanofilm of the (2 1 -bar 1 -bar 0) surface was prepared by ion beam sputtering deposition. The nanofilm was prepared on NaCl (0 0 1) surface at 200 o C to produce nearly pure (2 1 -bar 1 -bar 0) ZnO texture and the orientation relationship was determined and the interface discussed. Transmission electron microscopy lattice images were used to find the interface formed between ZnO nanocrystals. The ZnO nanocrystals coalesced to form a straight (0 1 -bar 1 -bar 2) interface. The photoluminescence spectrum from the (2 1 -bar 1 -bar 0) ZnO surface showed only a near-band-edge UV emission peak.

Importance of Resolving the Spectral Support of Beam-plasma Instabilities in Simulations

Energy Technology Data Exchange (ETDEWEB)

Shalaby, Mohamad; Broderick, Avery E. [Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, ON, N2L 3G1 (Canada); Chang, Philip [Department of Physics, University of Wisconsin-Milwaukee, 1900 E. Kenwood Boulevard, Milwaukee, WI 53211 (United States); Pfrommer, Christoph [Heidelberg Institute for Theoretical Studies, Schloss-Wolfsbrunnenweg 35, D-69118 Heidelberg (Germany); Lamberts, Astrid [Theoretical Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Puchwein, Ewald, E-mail: mshalaby@live.ca [Institute of Astronomy and Kavli Institute for Cosmology, University of Cambridge, Madingley Road, Cambridge, CB3 0HA (United Kingdom)

2017-10-20

Many astrophysical plasmas are prone to beam-plasma instabilities. For relativistic and dilute beams, the spectral support of the beam-plasma instabilities is narrow, i.e., the linearly unstable modes that grow with rates comparable to the maximum growth rate occupy a narrow range of wavenumbers. This places stringent requirements on the box-sizes when simulating the evolution of the instabilities. We identify the implied lower limits on the box size imposed by the longitudinal beam plasma instability, i.e., typically the most stringent condition required to correctly capture the linear evolution of the instabilities in multidimensional simulations. We find that sizes many orders of magnitude larger than the resonant wavelength are typically required. Using one-dimensional particle-in-cell simulations, we show that the failure to sufficiently resolve the spectral support of the longitudinal instability yields slower growth and lower levels of saturation, potentially leading to erroneous physical conclusion.

Importance of Resolving the Spectral Support of Beam-plasma Instabilities in Simulations

International Nuclear Information System (INIS)

Shalaby, Mohamad; Broderick, Avery E.; Chang, Philip; Pfrommer, Christoph; Lamberts, Astrid; Puchwein, Ewald

2017-01-01

Many astrophysical plasmas are prone to beam-plasma instabilities. For relativistic and dilute beams, the spectral support of the beam-plasma instabilities is narrow, i.e., the linearly unstable modes that grow with rates comparable to the maximum growth rate occupy a narrow range of wavenumbers. This places stringent requirements on the box-sizes when simulating the evolution of the instabilities. We identify the implied lower limits on the box size imposed by the longitudinal beam plasma instability, i.e., typically the most stringent condition required to correctly capture the linear evolution of the instabilities in multidimensional simulations. We find that sizes many orders of magnitude larger than the resonant wavelength are typically required. Using one-dimensional particle-in-cell simulations, we show that the failure to sufficiently resolve the spectral support of the longitudinal instability yields slower growth and lower levels of saturation, potentially leading to erroneous physical conclusion.

Deliverable 6.2 - Software: upgraded MC simulation tools capable of simulating a complete in-beam ET experiment, from the beam to the detected events. Report with the description of one (or few) reference clinical case(s), including the complete patient model and beam characteristics

CERN Document Server

The ENVISION Collaboration

2014-01-01

Deliverable 6.2 - Software: upgraded MC simulation tools capable of simulating a complete in-beam ET experiment, from the beam to the detected events. Report with the description of one (or few) reference clinical case(s), including the complete patient model and beam characteristics

IBA analysis and corrosion resistance of TiAlPtN/TiAlN/TiAl multilayer films deposited over a CoCrMo using magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Canto, C.E., E-mail: carloscanto2012@yahoo.com.mx [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 México D.F. (Mexico); Andrade, E.; Lucio, O. de; Cruz, J.; Solís, C. [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, 01000 México D.F. (Mexico); Rocha, M.F. [ESIME-Z, IPN, U.P. ALM, Gustavo A. Madero, C.P. 07738 México D.F. (Mexico); Alemón, B. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jalisco 45101 (Mexico); Tecnológico de Monterrey, Av. General Ramón Corona 2514, Col. Nuevo México, Zapopan, Jalisco 45201 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jalisco 45101 (Mexico); Huegel, J.C. [Tecnológico de Monterrey, Av. General Ramón Corona 2514, Col. Nuevo México, Zapopan, Jalisco 45201 (Mexico)

2016-03-15

The corrosion resistance and the elemental profile of multilayer coatings of TiAlPtN/TiAlN/TiAl synthesized by Physical Vapor Deposition (PVD) reactive magnetron sputtering over a CoCrMo alloy substrate in 10 periods of 30 min each were analyzed and compared to those of the substrate alone and to that of a TiAlPtN single layer coating of the same thickness. The objective of the present work was to create multilayers with different amounts of Pt to enhance the corrosion resistance of a biomedical alloy of CoCrMo. Corrosion tests were performed using Simulated Body Fluid (SBF) using potentiodynamic polarization tests at typical body temperature. The elemental composition and thickness of the coatings were evaluated with the combination of two ion beam analysis (IBA) techniques: a Rutherford Backscattering Spectroscopy (RBS) with alpha beam and a Nuclear Reaction Analysis with a deuteron beam.

IBA analysis and corrosion resistance of TiAlPtN/TiAlN/TiAl multilayer films deposited over a CoCrMo using magnetron sputtering

International Nuclear Information System (INIS)

Canto, C.E.; Andrade, E.; Lucio, O. de; Cruz, J.; Solís, C.; Rocha, M.F.; Alemón, B.; Flores, M.; Huegel, J.C.

2016-01-01

The corrosion resistance and the elemental profile of multilayer coatings of TiAlPtN/TiAlN/TiAl synthesized by Physical Vapor Deposition (PVD) reactive magnetron sputtering over a CoCrMo alloy substrate in 10 periods of 30 min each were analyzed and compared to those of the substrate alone and to that of a TiAlPtN single layer coating of the same thickness. The objective of the present work was to create multilayers with different amounts of Pt to enhance the corrosion resistance of a biomedical alloy of CoCrMo. Corrosion tests were performed using Simulated Body Fluid (SBF) using potentiodynamic polarization tests at typical body temperature. The elemental composition and thickness of the coatings were evaluated with the combination of two ion beam analysis (IBA) techniques: a Rutherford Backscattering Spectroscopy (RBS) with alpha beam and a Nuclear Reaction Analysis with a deuteron beam.

ITO films realized at room-temperature by ion beam sputtering for high-performance flexible organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lucas, B.; Rammal, W.; Moliton, A. [Limoges Univ., Faculte des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Dept. MINACOM, 87 - Limoges (France)

2006-06-15

Indium-tin oxide (ITO) thin layers are obtained by an IBS (Ion Beam Sputtering) deposition process. We elaborated ITO films on flexible substrates of polyethylene terephthalate (PET), under soft conditions of low temperatures and fulfilling the requirements of fabrication processes of the organic optoelectronic components. With a non thermally activated (20 Celsius degrees) ITO deposition assisted by an oxygen flow (1 cm{sup 3}/min), we got an optical transmittance of 90% in the visible range, a resistivity around 10{sup -3} {omega}.cm and a surface roughness lower than 1.5 mm. Thus we realized flexible organic light-emitting diodes (FOLEDs) with good performances: a maximum luminance of 12000 cd/m{sup 2} at a voltage of 19 V and a maximum luminous power efficiency around 1 lm/W at a voltage of 10 V (or a maximum current efficiency of 4 cd/A at 14 V) for the (PET(50 {mu}m) / ITO(200 nm) / TPD(40 nm) / Alq3(60 nm) / Ca / Al) structure. (authors)

Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

Energy Technology Data Exchange (ETDEWEB)

Nishiwaki, M.; Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2015-05-07

High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

2012-01-01

Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

Solar wind sputtering of small bodies: Exospheres of Phobos and Deimos

Science.gov (United States)

Schaible, M. J.; Johnson, R. E.; Lee, P.; Benna, M.; Elphic, R. C.

2014-12-01

Solar wind, magnetospheric ions and micrometeorites impact the surface of airless bodies in the solar system and deposit energy in the surface material. Excitation and momentum transfer processes lead to sputtering or desorption of molecules and atoms, thereby creating a dynamic exosphere about an otherwise airless body. Ion mass spectrometry of ejected materials provides a highly sensitive method for detecting sputter products and determining the surface composition [Johnson and Baragiola, 1991; Elphic et al., 1991]. Though most of the material is sputtered as neutral gas, UV photons can ionize ejected neutrals and a small fraction of the ejecta leaves the surface in an ionized state. However, ions are deflected by the variably-oriented solar wind magnetic field and thus relating their detection to a surface location can be problematic. Here we estimate the average ion density close to the surface of Phobos or Deimos to predict whether modern mass spectrometry instruments [Mahaffey et al. 2014] would be able to obtain sufficient compositional information to place constraints on their origin. The open source Monte Carlo program SRIM.SR was used to simulate the effect of ions incident onto a surface representing several different meteorite compositions and gave estimates of the damage and sputtering effects. As much of the empirical data supporting SRIM results comes from sputtering of metallic and organic molecular targets which can differ greatly from materials that make up planetary surfaces, measurements of cohesive energies and enthalpies of formation were used to estimate the surface binding energies for minerals, though these can vary significantly depending on the chemical composition. Since these properties affect the sputtering yield, comparisons of simulations with laboratory measurements were made to test the validity of our estimates. Using the validated results and a constant fraction to estimate ion yields, the density of ejected ions and neutrals vs

Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

Energy Technology Data Exchange (ETDEWEB)

Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

2014-07-01

Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering.

Science.gov (United States)

Singh, Shaivalini; Chakrabarti, P

2012-03-01

We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.

Thermal evolution of nanocrystalline co-sputtered Ni–Zr alloy films: Structural, magnetic and MD simulation studies

International Nuclear Information System (INIS)

Bhattacharya, Debarati; Rao, T.V. Chandrasekhar; Bhushan, K.G.; Ali, Kawsar; Debnath, A.; Singh, S.; Arya, A.; Bhattacharya, S.; Basu, S.

2015-01-01

Monophasic and homogeneous Ni 10 Zr 7 nanocrystalline alloy films were successfully grown at room temperature by co-sputtering in an indigenously developed three-gun DC/RF magnetron sputtering unit. The films could be produced with long-range crystallographic and chemical order in the alloy, thus overcoming the widely acknowledged inherent proclivity of the glass forming Ni–Zr couple towards amorphization. Crystallinity of these alloys is a desirable feature with regard to improved efficacy in applications such as hydrogen storage, catalytic activity and nuclear reactor engineering, to name a few. Thermal stability of this crystalline phase, being vital for transition to viable applications, was investigated through systematic annealing of the alloy films at 473 K, 673 K and 923 K for various durations. While the films were stable at 473 K, the effect of annealing at 673 K was to create segregation into nanocrystalline Ni (superparamagnetic) and amorphous Ni + Zr (non-magnetic) phases. Detailed analyses of the physical and magnetic structures before and after annealing were performed through several techniques effectual in analyzing stratified configurations and the findings were all consistent with each other. Polarized neutron and X-ray reflectometry, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectroscopy and X-ray photoelectron spectroscopy were used to gauge phase separation at nanometer length scales. SQUID based magnetometry was used to investigate macroscopic magnetic properties. Simulated annealing performed on this system using molecular dynamic calculations corroborated well with the experimental results. This study provides a thorough understanding of the creation and thermal evolution of a crystalline Ni–Zr alloy. - Highlights: • Nanocrystalline Ni 10 Zr 7 alloy thin films deposited successfully by co-sputtering. • Creation of a crystalline alloy in a binary system with a tendency to amorphize. • Quantitative

Thermal evolution of nanocrystalline co-sputtered Ni–Zr alloy films: Structural, magnetic and MD simulation studies

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, Debarati, E-mail: debarati@barc.gov.in [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Rao, T.V. Chandrasekhar; Bhushan, K.G. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Ali, Kawsar [Material Science Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Debnath, A. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Singh, S. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Arya, A. [Material Science Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Bhattacharya, S. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Basu, S. [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

2015-11-15

Monophasic and homogeneous Ni{sub 10}Zr{sub 7} nanocrystalline alloy films were successfully grown at room temperature by co-sputtering in an indigenously developed three-gun DC/RF magnetron sputtering unit. The films could be produced with long-range crystallographic and chemical order in the alloy, thus overcoming the widely acknowledged inherent proclivity of the glass forming Ni–Zr couple towards amorphization. Crystallinity of these alloys is a desirable feature with regard to improved efficacy in applications such as hydrogen storage, catalytic activity and nuclear reactor engineering, to name a few. Thermal stability of this crystalline phase, being vital for transition to viable applications, was investigated through systematic annealing of the alloy films at 473 K, 673 K and 923 K for various durations. While the films were stable at 473 K, the effect of annealing at 673 K was to create segregation into nanocrystalline Ni (superparamagnetic) and amorphous Ni + Zr (non-magnetic) phases. Detailed analyses of the physical and magnetic structures before and after annealing were performed through several techniques effectual in analyzing stratified configurations and the findings were all consistent with each other. Polarized neutron and X-ray reflectometry, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectroscopy and X-ray photoelectron spectroscopy were used to gauge phase separation at nanometer length scales. SQUID based magnetometry was used to investigate macroscopic magnetic properties. Simulated annealing performed on this system using molecular dynamic calculations corroborated well with the experimental results. This study provides a thorough understanding of the creation and thermal evolution of a crystalline Ni–Zr alloy. - Highlights: • Nanocrystalline Ni{sub 10}Zr{sub 7} alloy thin films deposited successfully by co-sputtering. • Creation of a crystalline alloy in a binary system with a tendency to amorphize. �

Simulation of ultrasonic surface waves with multi-Gaussian and point source beam models

International Nuclear Information System (INIS)

Zhao, Xinyu; Schmerr, Lester W. Jr.; Li, Xiongbing; Sedov, Alexander

2014-01-01

In the past decade, multi-Gaussian beam models have been developed to solve many complicated bulk wave propagation problems. However, to date those models have not been extended to simulate the generation of Rayleigh waves. Here we will combine Gaussian beams with an explicit high frequency expression for the Rayleigh wave Green function to produce a three-dimensional multi-Gaussian beam model for the fields radiated from an angle beam transducer mounted on a solid wedge. Simulation results obtained with this model are compared to those of a point source model. It is shown that the multi-Gaussian surface wave beam model agrees well with the point source model while being computationally much more efficient

Macrofilament simulation of high current beam transport

International Nuclear Information System (INIS)

Hayden, R.J.; Jakobson, M.J.

1985-01-01

Macrofilament simulation of high current beam transport through a series of solenoids has been used to investigate the sensitivity of such calculations to the initial beam distribution and to the number of filaments used in the simulation. The transport line was tuned to approximately 105 0 phase advance per cell at zero current with a tune depression of 65 0 due to the space charge. Input distributions with the filaments randomly uniform throughout a four dimensional ellipsoid and K-V input distributions have been studied. The behavior of the emittance is similar to that published for quadrupoles with like tune depression. The emittance demonstrated little growth in the first twelve solenoids, a rapid rate of growth for the next twenty, and a subsequent slow rate of growth. A few hundred filaments were sufficient to show the character of the instability. The number of filaments utilized is an order of magnitude fewer than has been utilized previously for similar instabilities. The previously published curves for simulations with less than a thousand particles show a rather constant emittance growth. If the solenoid transport line magnetic field is increased a few percent, emittance growth curves are obtained not unlike those curves. Collision growth effects are less important than indicated in the previously published results for quadrupoles

Automated analysis for detecting beams in laser wakefield simulations

International Nuclear Information System (INIS)

Ushizima, Daniela M.; Rubel, Oliver; Prabhat, Mr.; Weber, Gunther H.; Bethel, E. Wes; Aragon, Cecilia R.; Geddes, Cameron G.R.; Cormier-Michel, Estelle; Hamann, Bernd; Messmer, Peter; Hagen, Hans

2008-01-01

Laser wakefield particle accelerators have shown the potential to generate electric fields thousands of times higher than those of conventional accelerators. The resulting extremely short particle acceleration distance could yield a potential new compact source of energetic electrons and radiation, with wide applications from medicine to physics. Physicists investigate laser-plasma internal dynamics by running particle-in-cell simulations; however, this generates a large dataset that requires time-consuming, manual inspection by experts in order to detect key features such as beam formation. This paper describes a framework to automate the data analysis and classification of simulation data. First, we propose a new method to identify locations with high density of particles in the space-time domain, based on maximum extremum point detection on the particle distribution. We analyze high density electron regions using a lifetime diagram by organizing and pruning the maximum extrema as nodes in a minimum spanning tree. Second, we partition the multivariate data using fuzzy clustering to detect time steps in a experiment that may contain a high quality electron beam. Finally, we combine results from fuzzy clustering and bunch lifetime analysis to estimate spatially confined beams. We demonstrate our algorithms successfully on four different simulation datasets

Beam Loss Patterns at the LHC Collimators Measurements & Simulations

CERN Document Server

Böhlen, Till Tobias

2008-01-01

The Beam Loss Monitoring (BLM) system of the Large Hadron Collider (LHC) detects particle losses of circulating beams and initiates an emergency extraction of the beam in case that the BLM thresholds are exceeded. This protection is required as energy deposition in the accelerator equipment due to secondary shower particles can reach critical levels; causing damage to the beam-line components and quenches of superconducting magnets. Robust and movable beam line elements, so-called collimators, are the aperture limitations of the LHC. Consequently, they are exposed to the excess of lost beam particles and their showers. Proton loss patterns at LHC collimators have to be determined to interpret the signal of the BLM detectors and to set adequate BLM thresholds for the protection of collimators and other equipment in case of unacceptably increased loss rates. The first part of this work investigates the agreement of BLM detector measurements with simulations for an LHC-like collimation setup. The setup consists ...

Simulation of the CERN GTS-LHC ECR ion source extraction system with lead and argon ion beams

CERN Document Server

Toivanen, V; Küchler, D; Lombardi, A; Scrivens, R; Stafford-Haworth, J

2014-01-01

A comprehensive study of beam formation and beam transport has been initiated in order to improve the performance of the CERN heavy ion injector, Linac3. As part of this study, the ion beam extraction system of the CERN GTS-LHC 14.5 GHz Electron Cyclotron Resonance Ion Source (ECRIS) has been modelled with the ion optical code IBSimu. The simulations predict self-consistently the triangular and hollow beam structures which are often observed experimentally with ECRIS ion beams. The model is used to investigate the performance of the current extraction system and provides a basis for possible future improvements. In addition, the extraction simulation provides a more realistic representation of the initial beam properties for the beam transport simulations, which aim to identify the performance bottle necks along the Linac3 low energy beam transport. The results of beam extraction simulations with Pb and Ar ion beams from the GTS-LHC will be presented and compared with experimental observations.

Topography induced by sputtering in a magnetic sector instrument: an AFM and SEM study

International Nuclear Information System (INIS)

Iacob, E.; Bersani, M.; Lui, A.; Giubertoni, D.; Barozzi, M.; Anderle, M.

2004-01-01

Due to the sensitivity, the good depth resolution and the great interest in ultra shallow profile, secondary ion mass spectrometry (SIMS) is one of the prime techniques used in the semiconductor industry. Low impact energy beams are required to profile shallow distributions. Since Cs + beam sputtering can cause morphological artifacts as well as O 2 + beam does, a detailed study is required to understand development and limiting analytical conditions. In this work we analyzed the effect of low energy Cs + primary beam incident at 68 deg. and 78 deg. on different silicon samples. By using atomic force microscopy (AFM) and scanning electron microscopy (SEM) we underline their reliability and correlate the morphological effects to the SIMS analytical parameters and samples characteristics

Semi-empirical formulas for sputtering yield

International Nuclear Information System (INIS)

Yamamura, Yasumichi

1994-01-01

When charged particles, electrons, light and so on are irradiated on solid surfaces, the materials are lost from the surfaces, and this phenomenon is called sputtering. In order to understand sputtering phenomenon, the bond energy of atoms on surfaces, the energy given to the vicinity of surfaces and the process of converting the given energy to the energy for releasing atoms must be known. The theories of sputtering and the semi-empirical formulas for evaluating the dependence of sputtering yield on incident energy are explained. The mechanisms of sputtering are that due to collision cascade in the case of heavy ion incidence and that due to surface atom recoil in the case of light ion incidence. The formulas for the sputtering yield of low energy heavy ion sputtering, high energy light ion sputtering and the general case between these extreme cases, and the Matsunami formula are shown. At the stage of the publication of Atomic Data and Nuclear Data Tables in 1984, the data up to 1983 were collected, and about 30 papers published thereafter were added. The experimental data for low Z materials, for example Be, B and C and light ion sputtering data were reported. The combination of ions and target atoms in the collected sputtering data is shown. The new semi-empirical formula by slightly adjusting the Matsunami formula was decided. (K.I.)

Impurity radiation from a beam-plasma neutron source

International Nuclear Information System (INIS)

Molvik, A.W.

1995-01-01

Impurity radiation, in a worst case evaluation for a beam-plasma neutron source (BPNS), does not limit performance. Impurities originate from four sources: (a) sputtering from walls by charge exchange or alpha particle bombardment, (b) sputtering from limiters, (c) plasma desorption of gas from walls and (d) injection with neutral beams. Sources (c) and (d) are negligible; adsorbed gas on the walls of the confinement chamber and the neutral beam sources is removed by the steady state discharge. Source (b) is negligible for impinging ion energies below the sputtering threshold (T i ≤ 0.025 keV on tungsten) and for power densities to the limiter within the capabilities of water cooling (30-40 MW/m 2 ); both conditions can be satisfied in the BPNS. Source (a) radiates 0.025 MW/m 2 to the neutron irradiation samples, compared with 5 to 10 MW/m 2 of neutrons; and radiates a total of 0.08 MW from the plasma column, compared with 60 MW of injected power. The particle bombardment that yields source (a) deposits an average of 2.7 MW/m 2 on the samples, within the capabilities of helium gas cooling (10 MW/m 2 ). An additional worst case for source (d) is evaluated for present day 2 to 5 s pulsed neutral beams with 0.1% impurity density and is benchmarked against 2XIIB. The total radiation would increase a factor of 1.5 to ≤ 0.12 MW, supporting the conclusion that impurities will not have a significant impact on a BPN. (author). 61 refs, 7 figs, 2 tabs

Numerical simulation for the accelerator of the KSTAR neutral beam ion source

International Nuclear Information System (INIS)

Kim, Tae-Seong; Jeong, Seung Ho; In, Sang Ryul

2010-01-01

Recent experiments with a prototype long-pulse, high-current ion source being developed for the neutral beam injection system of the Korea Superconducting Tokamak Advanced Research have shown that the accelerator grid assembly needs a further upgrade to achieve the final goal of 120keV/65A for the deuterium ion beam. The accelerator upgrade concept was determined theoretically by simulations using the IGUN code. The simulation study was focused on finding parameter sets that raise the optimum perveance as large as possible and reduce the beam divergence as low as possible. From the simulation results, it was concluded that it is possible to achieve this goal by sliming the plasma grid (G1), shortening the second gap (G2-G3), and adjusting the G2 voltage ratio.

Comparison of beam simulations with measurements for a 1.25-MeV, CW RFQ

International Nuclear Information System (INIS)

Smith, H.V. Jr.; Bolme, G.O.; Sherman, J.D.; Stevens, R.R. Jr.; Young, L.M.; Zaugg, T.J.

1998-01-01

The Low-Energy Demonstration Accelerator (LEDA) injector is tested using the Chalk River Injector Test Stand (CRITS) radio-frequency quadrupole (RFQ) as a diagnostic instrument. Fifty-keV, dc proton beams are injected into the 1.25-MeV, CW RFQ and transported to a beamstop. Computer-simulation-code predictions of the expected beam performance are compared with the measured beam currents and beam profiles. Good agreement is obtained between the measurements and the simulations at the 75-mA design RFQ output current

Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions

Directory of Open Access Journals (Sweden)

Xinghao Liang

2018-02-01

Full Text Available Silicon carbide (SiC is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors.

Computer simulation and data compilation of sputtering yield by hydrogen isotopes ({sup 1}H{sup +}, {sup 2}D{sup +}, {sup 3}T{sup +}) and helium ({sup 4}He{sup +}) ion impact from monatomic solids at normal incidence

Energy Technology Data Exchange (ETDEWEB)

Yamamura, Yasunori; Sakaoka, Kazuho; Tawara, Hiro

1995-10-01

The ion-induced sputtering yields from monatomic solids at normal incidence are presented graphically for light-ion ({sup 1}H{sup +}, {sup 2}D{sup +}, {sup 3}T{sup +}, {sup 4}He{sup +}) bombardment on various target materials as a function of the incident ion energy. To supplement the experimental data, the sputtering yields are calculated by the Monte Carlo simulation code ACAT for all possible light ion-target combinations. Each graph shows the available experimental and ACAT data points, together with the sputtering yield calculated by the Yamamura and Tawara empirical formula. (author).

Beam simulations with initial bunch noise in superconducting RF proton linacs

CERN Document Server

Tückmantel, J

2010-01-01

Circular machines are plagued by coupled bunch instabilities (CBI), driven by impedance peaks, where then all cavity higher order modes (HOMs) are possible drivers. Limiting the CBI growth rate is the fundamental reason that all superconducting rf cavities in circular machines are equipped with HOM dampers. The question arises if for similar reasons HOM damping would not be imperative also in high current superconducting rf proton linacs. Therefore we have simulated the longitudinal bunched beam dynamics in such machines, also including charge and position noise on the injected bunches. Simulations were executed for a generic linac with properties close to the planned SPL at CERN, SNS, or Project X at FNAL. It was found that with strong bunch noise and monopole HOMs with high Qext large beam scatter, possibly exceeding the admittance of a receiving machine, cannot be excluded. A transverse simulation shows similar requirements. Therefore including initial bunch noise in any beam dynamic study on superconducti...

Simulation of long-distance beam propagation in the Paul trap simulator experiment

International Nuclear Information System (INIS)

Gilson, Erik P.; Chung, Moses; Davidson, Ronald C.; Efthimion, Philip C.; Majeski, Richard; Startsev, Edward A.

2005-01-01

The Paul Trap Simulator Experiment (PTSX) simulates the propagation of intense charged particle beams over distances of many kilometers through magnetic alternating-gradient (AG) transport systems by making use of the similarity between the transverse dynamics of particles in the two systems. One-component pure ion plasmas have been trapped that correspond to normalized intensity parameter s-coret=ω p 2 (0)/2ω q 2 = p (r) is the plasma frequency and ω q is the average transverse focusing frequency in the smooth-focusing approximation. The PTSX device confines one-component cesium ion plasmas for hundreds of milliseconds, which is equivalent to beam propagation over 10km. Results are presented for experiments in which the amplitude of the confining voltage waveform has been modified as a function of time. Recent modifications to the device are described, and both the change from a cesium ion source to a barium ion source, and the development of a laser-induced fluorescence diagnostic system are discussed

Beam Delivery Simulation - Recent Developments and Optimization

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00232566; Boogert, Stewart Takashi; Garcia-Morales, H; Gibson, Stephen; Kwee-Hinzmann, Regina; Nevay, Laurence James; Deacon, Lawrence Charles

2015-01-01

Beam Delivery Simulation (BDSIM) is a particle tracking code that simulates the passage of particles through both the magnetic accelerator lattice as well as their interaction with the material of the accelerator itself. The Geant4 toolkit is used to give a full range of physics processes needed to simulate both the interaction of primary particles and the production and subsequent propagation of secondaries. BDSIM has already been used to simulate linear accelerators such as the International Linear Collider (ILC) and the Compact Linear Collider (CLIC), but it has recently been adapted to simulate circular accelerators as well, producing loss maps for the Large Hadron Collider (LHC). In this paper the most recent developments, which extend BDSIM’s functionality as well as improve its efficiency are presented. Improvement and refactorisation of the tracking algorithms are presented alongside improved automatic geometry construction for increased particle tracking speed.

Application of the Ta liner technique to produce Ca beams at INFN-Legnaro National Laboratories (INFN-LNL)

Energy Technology Data Exchange (ETDEWEB)

Galatà, A., E-mail: alessio.galata@lnl.infn.it; Sattin, M.; Manzolaro, M.; Martini, D.; Facco, A. [INFN-Legnaro National Laboratories, Legnaro (Pd) (Italy); Tinschert, K.; Spaedtke, P.; Lang, R. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (Germany); Kulevoy, T. [Institute for Theoretical and Experimental Physics, Moscow (Russian Federation)

2014-02-15

The ECR ion sources are able to produce a wide variety of highly charged metallic ion beams thanks to the development of different techniques (ovens, sputtering, direct insertion, metal ions from volatile compounds (MIVOC)). In the case of the ovens, the sticking of the hot vapors on the surface of the plasma chamber leads to high material consumption rates. For elements like Ca, a tantalum liner inserted inside the chamber can be used to limit this phenomenon. The modeling of temperature distribution inside the chamber with and without the liner was carried out with COMSOL-multiphysics code. Results of simulation and the comparison with experiments performed at INFN-Legnaro National Laboratories with Ca beams are discussed.

The statistics of sputtering

International Nuclear Information System (INIS)

Robinson, M.T.

1993-01-01

The MARLOWE program was used to study the statistics of sputtering on the example of 1- to 100-keV Au atoms normally incident on static (001) and (111) Au crystals. The yield of sputtered atoms was examined as a function of the impact point of the incident particles (''ions'') on the target surfaces. There were variations on two scales. The effects of the axial and planar channeling of the ions could be traced, the details depending on the orientation of the target and the energies of the ions. Locally, the sputtering yield was very sensitive to the impact point, small changes in position often producing large changes yield. Results indicate strongly that the sputtering yield is a random (''chaotic'') function of the impact point

Numerical simulations of self-pinched transport of intense ion beams in low-pressure gases

International Nuclear Information System (INIS)

Rose, D.V.; Ottinger, P.F.; Welch, D.R.; Oliver, B.V.; Olson, C.L.

1999-01-01

The self-pinched transport of intense ion beams in low-pressure background gases is studied using numerical simulations and theoretical analysis. The simulations are carried out in a parameter regime that is similar to proton beam experiments being fielded on the Gamble II pulsed power generator [J. D. Shipman, Jr., IEEE Trans. Nucl. Sci. NS-18, 243 (1971)] at the Naval Research Laboratory. Simulation parameter variations provide information on scaling with background gas species, gas pressure, beam current, beam energy, injection angles, and boundaries. The simulation results compare well with simple analytic scaling arguments for the gas pressure at which the effective net current should peak and with estimates for the required confinement current. The analysis indicates that the self-pinched transport of intense proton beams produced on Gamble II (1.5 MeV, 100 kA, 3 cm radius) is expected to occur at gas pressures between 30 and 80 mTorr of He or between 3 and 10 mTorr of Ar. The significance of these results to ion-driven inertial confinement fusion is discussed. copyright 1999 American Institute of Physics

Simulations and measurements of beam loss patterns at the CERN Large Hadron Collider

Science.gov (United States)

Bruce, R.; Assmann, R. W.; Boccone, V.; Bracco, C.; Brugger, M.; Cauchi, M.; Cerutti, F.; Deboy, D.; Ferrari, A.; Lari, L.; Marsili, A.; Mereghetti, A.; Mirarchi, D.; Quaranta, E.; Redaelli, S.; Robert-Demolaize, G.; Rossi, A.; Salvachua, B.; Skordis, E.; Tambasco, C.; Valentino, G.; Weiler, T.; Vlachoudis, V.; Wollmann, D.

2014-08-01

The CERN Large Hadron Collider (LHC) is designed to collide proton beams of unprecedented energy, in order to extend the frontiers of high-energy particle physics. During the first very successful running period in 2010-2013, the LHC was routinely storing protons at 3.5-4 TeV with a total beam energy of up to 146 MJ, and even higher stored energies are foreseen in the future. This puts extraordinary demands on the control of beam losses. An uncontrolled loss of even a tiny fraction of the beam could cause a superconducting magnet to undergo a transition into a normal-conducting state, or in the worst case cause material damage. Hence a multistage collimation system has been installed in order to safely intercept high-amplitude beam protons before they are lost elsewhere. To guarantee adequate protection from the collimators, a detailed theoretical understanding is needed. This article presents results of numerical simulations of the distribution of beam losses around the LHC that have leaked out of the collimation system. The studies include tracking of protons through the fields of more than 5000 magnets in the 27 km LHC ring over hundreds of revolutions, and Monte Carlo simulations of particle-matter interactions both in collimators and machine elements being hit by escaping particles. The simulation results agree typically within a factor 2 with measurements of beam loss distributions from the previous LHC run. Considering the complex simulation, which must account for a very large number of unknown imperfections, and in view of the total losses around the ring spanning over 7 orders of magnitude, we consider this an excellent agreement. Our results give confidence in the simulation tools, which are used also for the design of future accelerators.

Simulations and measurements of beam loss patterns at the CERN Large Hadron Collider

Directory of Open Access Journals (Sweden)

R. Bruce

2014-08-01

Full Text Available The CERN Large Hadron Collider (LHC is designed to collide proton beams of unprecedented energy, in order to extend the frontiers of high-energy particle physics. During the first very successful running period in 2010–2013, the LHC was routinely storing protons at 3.5–4 TeV with a total beam energy of up to 146 MJ, and even higher stored energies are foreseen in the future. This puts extraordinary demands on the control of beam losses. An uncontrolled loss of even a tiny fraction of the beam could cause a superconducting magnet to undergo a transition into a normal-conducting state, or in the worst case cause material damage. Hence a multistage collimation system has been installed in order to safely intercept high-amplitude beam protons before they are lost elsewhere. To guarantee adequate protection from the collimators, a detailed theoretical understanding is needed. This article presents results of numerical simulations of the distribution of beam losses around the LHC that have leaked out of the collimation system. The studies include tracking of protons through the fields of more than 5000 magnets in the 27 km LHC ring over hundreds of revolutions, and Monte Carlo simulations of particle-matter interactions both in collimators and machine elements being hit by escaping particles. The simulation results agree typically within a factor 2 with measurements of beam loss distributions from the previous LHC run. Considering the complex simulation, which must account for a very large number of unknown imperfections, and in view of the total losses around the ring spanning over 7 orders of magnitude, we consider this an excellent agreement. Our results give confidence in the simulation tools, which are used also for the design of future accelerators.

Simulating the Long-Distance Propagation of Intense Beams in the Paul Trap Simulator Experiment

CERN Document Server

Gilson, Erik P; Davidson, Ronald C; Efthimion, Philip; Majeski, Richard; Startsev, Edward

2005-01-01

The Paul Trap Simulator Experiment (PTSX) makes use of a compact Paul trap configuration with quadrupolar oscillating wall voltages to simulate the propagation of intense charged particle beams over distances of many kilometers through magnetic alternating-gradient transport systems. The simulation is possible because of the similarity between the transverse dynamics of particles in the two systems. One-component pure cesium ion plasmas have been trapped that correspond to normalized intensity parameters s < 0.8, where s is the ratio of the square of the plasma frequency to twice the square of the average transverse focusing frequency. The PTSX device confines the plasma for hundreds of milliseconds, which is equivalent to beam propagation over tens of kilometers. Results are presented for experiments in which the amplitude of the oscillating confining voltage waveform has been modified as a function of time. A comparison is made between abrupt changes in amplitude and adiabatic changes in amplitude. T...

Investigation of beam transmission in A 9SDH-2 3.0 MV NEC pelletron tandem accelerator

Energy Technology Data Exchange (ETDEWEB)

Deoli, Naresh T.; Kummari, Venkata C.; Pacheco, Jose L.; Duggan, Jerome L.; Glass, Gary A.; McDaniel, Floyd D.; Reinert, Tilo; Rout, Bibhudutta; Weathers, Duncan L. [Ion Beam Modification And Analysis Laboratory, Department of Physics, University of North Texas, Denton, Texas 76203 (United States)

2013-04-19

Electrostatic tandem accelerators are widely used to accelerate ions for experiments in materials science such as high energy ion implantation, materials modification, and analyses. Many applications require high beam current as well as high beam brightness at the target; thus, maximizing the beam transmission through such electrostatic accelerators becomes important. The Ion Beam Modification and Analysis Laboratory (IBMAL) at University of North Texas is equipped with four accelerators, one of which is a 9SDH-2 3.0 MV National Electrostatic Corporation (NEC) Pelletron Registered-Sign tandem accelerator. The tandem accelerator is equipped with three ion sources: one radio frequency-He ion source (Alphatross) and two ion sources of Cs-sputter type, the SNICS II (Source of Negative Ions by Cesium Sputtering) and a Cs-sputter source for trace-element accelerator based mass spectrometry. This work presents a detailed study of the beam transmission of hydrogen, silicon, and silver ions through the accelerator using the SNICS ion source with injection energies ranging from 20 keV to 70 keV. The beam transmission is quantified for three different terminal voltages: 1.5 MV, 2.0 MV and 2.5 MV. For a given terminal voltage, it has been found that beam transmission is strongly dependent on the ion source injector potential. Details of experiments and data analysis are presented.

Guiding center simulations of strong ion beams with applications to the Counterstreaming Ion Torus

International Nuclear Information System (INIS)

Tull, C.

1978-03-01

In the proposed Counterstreaming Ion Torus (CIT) steady state rather than pulsed operation may be possible if all of the plasma power density is provided by neutral beam injection. After the neutral beams have penetrated the magnetic field, strong ion beam currents are produced. A major concern with the relatively strong counterstreaming ion currents is the effect of the beam self-magnetic fields on the macroscopic equilibrium of the system. Pinching and self focusing of the individual beams may occur, or the repulsive interaction of the two oppositely directed beam currents may destroy the equilibrium entirely. We investigate this macroscopic behavior of the ion beams with a guiding center plasma particle simulation model and we describe a model we have developed to simulate steady state behavior in an ideal CIT configuration

RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

Science.gov (United States)

Ojima, T.; Tainosho, T.; Sharmin, S.; Yanagihara, H.

2018-04-01

Real-time in situ reflection high energy electron diffraction (RHEED) observations of Fe3O4, γ-Fe2O3, and (Co,Fe)3O4 films on MgO(001) substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) experiments. This suggests that the layer-by-layer growth of spinel ferrite (001) films is general in most physical vapor deposition (PVD) processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

Stress evolution during and after sputter deposition of thin Cu Al alloy films

Science.gov (United States)

Pletea, M.; Wendrock, H.; Kaltofen, R.; Schmidt, O. G.; Koch, R.

2008-06-01

The stress evolution during and after sputter deposition of thin Cu-Al alloy films containing 1 and 2 at.% Al onto oxidized Si(100) substrates has been studied up to thicknesses of 300 nm by means of in situ substrate curvature measurements. In order to correlate stress and morphology, the microstructure was investigated by focused ion beam microscopy, scanning electron microscopy, and atomic force microscopy. The evolution of the stress and microstructure of the Cu-Al alloy films is similar to that for sputtered pure Cu films. Film growth proceeds in the Volmer-Weber mode, typical for high mobility metals. It is characterized by nucleation, island, percolation, and channel stages before the films become continuous, as well as lateral grain growth in the compact films. With increasing Al content the overall atom mobility and, thus, the average grain size of the alloy films are reduced. Increase of the sputter pressure from 0.5 to 2 Pa leads to films with larger grain size, rougher surface morphology and higher electrical resistivity.

RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

Directory of Open Access Journals (Sweden)

T. Ojima

2018-04-01

Full Text Available Real-time in situ reflection high energy electron diffraction (RHEED observations of Fe3O4, γ-Fe2O3, and (Co,Fe3O4 films on MgO(001 substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE and pulsed laser deposition (PLD experiments. This suggests that the layer-by-layer growth of spinel ferrite (001 films is general in most physical vapor deposition (PVD processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

Beam dynamics simulation of the S-DALINAC injector section

Energy Technology Data Exchange (ETDEWEB)

Franke, Sylvain; Ackermann, Wolfgang; Weiland, Thomas [Institut fuer Theorie Elektromagnetischer Felder, Technische Universitaet Darmstadt, Darmstadt (Germany)

2013-07-01

In order to extend the experimental possibilities at the superconducting electron linear accelerator S-DALINAC a new polarized gun has recently been installed in addition to the well-established thermionic electron source. Beside the two electron sources the injector section consists of several short quadrupole triplets, an alpha magnet, a Wien filter and a chopper/prebuncher system. The setup of these components differs depending on whether bunched polarized electrons with kinetic energy in the 100 keV range are supplied by the polarized source or whether a continuous unpolarized 250 keV electron beam is extracted from the thermionic gun. The electrons pass through the injector at a relatively low energy and therefore are very sensitive to the beam forming elements in this section. Thus, a proper knowledge of the particle distribution at the exit of the injector section is essential for the quality of any simulation of the subsequent accelerator parts. In this contribution first numerical beam dynamics simulation results of the S-DALINAC injector setup are discussed.

Theory and Simulation of the Physics of Space Charge Dominated Beams

International Nuclear Information System (INIS)

Haber, Irving

2002-01-01

This report describes modeling of intense electron and ion beams in the space charge dominated regime. Space charge collective modes play an important role in the transport of intense beams over long distances. These modes were first observed in particle-in-cell simulations. The work presented here is closely tied to the University of Maryland Electron Ring (UMER) experiment and has application to accelerators for heavy ion beam fusion

Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

International Nuclear Information System (INIS)

Fearn, Sarah; Chater, Richard; McPhail, David

2004-01-01

Sputtering of silicon by low-energy nitrogen primary ion beams has been studied by a number of authors to characterize the altered layer, ripple formation and the sputtered yields of secondary ions [Surf. Sci. 424 (1999) 299; Appl. Phys. A: Mater. Sci. Process 53 (1991) 179; Appl. Phys. Lett. 73 (1998) 1287]. This study examines the application of low-energy nitrogen primary ion beams for the possible depth profiling of ultra-shallow arsenic implants into silicon. The emphasis of this work is on the matrix silicon signals in the pre-equilibrium surface region that are used for dose calibration. Problems with these aspects of the concentration depth profiling can give significant inconsistencies well outside the error limits of the quoted dose for the arsenic implantation as independently verified by CV profiling. This occurs during depth profiling with either oxygen primary ion beams (with and without oxygen leaks) or cesium primary ion beams

Rotating dust ring in an RF discharge coupled with a dc-magnetron sputter source. Experiment and simulation

International Nuclear Information System (INIS)

Matyash, K; Froehlich, M; Kersten, H; Thieme, G; Schneider, R; Hannemann, M; Hippler, R

2004-01-01

During an experiment involving coating of dust grains trapped in an RF discharge using a sputtering dc-magnetron source, a rotating dust ring was observed and investigated. After the magnetron was switched on, the dust cloud levitating above the RF electrode formed a ring rotating as a rigid body. Langmuir probe diagnostics were used for the measurement of plasma density and potential. It was discovered that the coupling of the dc-magnetron source to the RF discharge causes steep radial gradients in electron density and plasma potential. The rotation of the dust ring is attributed to the azimuthal component of the ion drag force, which appears due to the azimuthal drift of the ions caused by crossed radial electric and axial magnetic fields. In order to get more insight into the mechanism of dust ring rotation, a Particle-in-Cell simulation of a rotating dust cloud was performed. The results of the experiment and simulation are presented and discussed

Rotating dust ring in an RF discharge coupled with a dc-magnetron sputter source. Experiment and simulation

Energy Technology Data Exchange (ETDEWEB)

Matyash, K [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Froehlich, M [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany); Kersten, H [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Thieme, G [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany); Schneider, R [Max-Planck-Institut fuer Plasmaphysik, Teilinstitut Greifswald, Wendelsteinstrasse 1, 17489 Greifswald (Germany); Hannemann, M [Institut fuer Niedertemperaturplasmaphysik Greifswald, Fr.-L.-Jahn-Strasse 19, 17489 Greifswald (Germany); Hippler, R [Institut fuer Physik, Ernst-Moritz-Arndt-Universitaet Greifswald, Domstrasse 10a, 17487 Greifswald (Germany)

2004-10-07

During an experiment involving coating of dust grains trapped in an RF discharge using a sputtering dc-magnetron source, a rotating dust ring was observed and investigated. After the magnetron was switched on, the dust cloud levitating above the RF electrode formed a ring rotating as a rigid body. Langmuir probe diagnostics were used for the measurement of plasma density and potential. It was discovered that the coupling of the dc-magnetron source to the RF discharge causes steep radial gradients in electron density and plasma potential. The rotation of the dust ring is attributed to the azimuthal component of the ion drag force, which appears due to the azimuthal drift of the ions caused by crossed radial electric and axial magnetic fields. In order to get more insight into the mechanism of dust ring rotation, a Particle-in-Cell simulation of a rotating dust cloud was performed. The results of the experiment and simulation are presented and discussed.

Systematic comparison of position and time dependent macroparticle simulations in beam dynamics studies

Directory of Open Access Journals (Sweden)

Ji Qiang

2002-06-01

Full Text Available Macroparticle simulation plays an important role in modern accelerator design and operation. Most linear rf accelerators have been designed based on macroparticle simulations using longitudinal position as the independent variable. In this paper, we have done a systematic comparison between using longitudinal position as the independent variable and using time as the independent variable in macroparticle simulations. We have found that, for an rms-matched beam, the maximum relative moment difference for second, fourth moments and beam maximum amplitudes between these two types of simulations is 0.25% in a 10 m reference transport system with physical parameters similar to the Spallation Neutron Source linac design. The maximum z-to- t transform error in the space-charge force calculation of the position dependent simulation is about 0.1% in such a system. This might cause a several percent error in a complete simulation of a linac with a length of hundreds of meters. Furthermore, the error may be several times larger in simulations of mismatched beams. However, if such errors are acceptable to the linac designer, then one is justified in using position dependent macroparticle simulations in this type of linac design application.

Structuring of silicon with low energy focused ion beams

Energy Technology Data Exchange (ETDEWEB)

Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

Transport theory of sputtering I: Depth of origin of sputtered atoms

International Nuclear Information System (INIS)

Zhang, Z.L.

1999-01-01

Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error <10%) for m=3D0.2. It is also shown that, if the sputtering yield equals the corresponding one in Sigmund's theory, the depth of origin of sputtered atoms must be shorter than in Sigmund's theory for 0.25 m ≥ 3D 0. The former even may be only about one half of the latter as long as m=3D0. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

Simulations of Beam Quality in a 13 MeV PET Cyclotron

Directory of Open Access Journals (Sweden)

A. Pramudita

2015-12-01

Full Text Available Simulation of the trajectories of negative hydrogen ion (H− beam in a 13 MeV PET cyclotron (DECY-13 were carried out by using the Runge-Kutta (RK4 approximation method and Scilab 5.4.1. The magnetic and electric fields were calculated using Opera-3d/TOSCA softwares at 1 mm resolution. The cyclotron is of a fourth-harmonics type, meaning that the acceleration occurs four times per cycle, with a radiofrequency (RF field of 77.66 MHz frequency and 40 kV amplitude. The calculations and simulations show that the maximum distance between the ion source and the puller is about 6 mm, while the maximum width of the beam at 13 MeV is about 10 mm, and the initial phase between the RF field and the beam ranges from -10° to 10°, with a yield of about 10% of the beam from the ion source getting accelerated to 13 MeV.

Proton beam characterization by proton-induced acoustic emission: simulation studies

International Nuclear Information System (INIS)

Jones, K C; Witztum, A; Avery, S; Sehgal, C M

2014-01-01

Due to their Bragg peak, proton beams are capable of delivering a targeted dose of radiation to a narrow volume, but range uncertainties currently limit their accuracy. One promising beam characterization technique, protoacoustic range verification, measures the acoustic emission generated by the proton beam. We simulated the pressure waves generated by proton radiation passing through water. We observed that the proton-induced acoustic signal consists of two peaks, labeled α and γ, with two originating sources. The α acoustic peak is generated by the pre-Bragg peak heated region whereas the source of the γ acoustic peak is the proton Bragg peak. The arrival time of the α and γ peaks at a transducer reveals the distance from the beam propagation axis and Bragg peak center, respectively. The maximum pressure is not observed directly above the Bragg peak due to interference of the acoustic signals. Range verification based on the arrival times is shown to be more effective than determining the Bragg peak position based on pressure amplitudes. The temporal width of the α and γ peaks are linearly proportional to the beam diameter and Bragg peak width, respectively. The temporal separation between compression and rarefaction peaks is proportional to the spill time width. The pressure wave expected from a spread out Bragg peak dose is characterized. The simulations also show that acoustic monitoring can verify the proton beam dose distribution and range by characterizing the Bragg peak position to within ∼1 mm. (paper)

Simulation of beam-beam effects in tevatron

International Nuclear Information System (INIS)

Mishra, C.S.; Assadi, S.; Talman, R.

1995-08-01

The Fermilab accelerator complex is in the middle of an upgrade plan Fermilab III. In the last phase of this upgrade the luminosity of the Tevatron will increase by at least one order of magnitude. In order to keep the number of interactions per crossing manageable for experiments, the number of bunches will be increased from 6 x 6 to 36 x 36 and finally to ∼100 x 100 bunches. The beam dynamics of the Tevatron has been studied from Beam-Beam effect point of view in a ''Strong-Weak'' representation with a single particle being tracked in presence of other beam. This paper describes the beam-beam effect in 6 x 6 operation of Tevatron

Nonlinear hybrid simulation of internal kink with beam ion effects in DIII-D

Energy Technology Data Exchange (ETDEWEB)

Shen, Wei; Sheng, Zheng-Mao [Department of Physics, Institute for Fusion Theory and Simulation, Zhejiang University, Hangzhou 310027 (China); Fu, G. Y.; Tobias, Benjamin [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Zeeland, Michael Van [General Atomics, San Diego, California 92186-5608 (United States); Wang, Feng [School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024 (China)

2015-04-15

In DIII-D sawteething plasmas, long-lived (1,1) kink modes are often observed between sawtooth crashes. The saturated kink modes have two distinct frequencies. The mode with higher frequency transits to a fishbone-like mode with sufficient on-axis neutral beam power. In this work, hybrid simulations with the global kinetic-magnetohydrodynamic (MHD) hybrid code M3D-K have been carried out to investigate the linear stability and nonlinear dynamics of the n = 1 mode with effects of energetic beam ions for a typical DIII-D discharge where both saturated kink mode and fishbone were observed. Linear simulation results show that the n = 1 internal kink mode is unstable in MHD limit. However, with kinetic effects of beam ions, a fishbone-like mode is excited with mode frequency about a few kHz depending on beam pressure profile. The mode frequency is higher at higher beam power and/or narrower radial profile consistent with the experimental observation. Nonlinear simulations have been performed to investigate mode saturation as well as energetic particle transport. The nonlinear MHD simulations show that the unstable kink mode becomes a saturated kink mode after a sawtooth crash. With beam ion effects, the fishbone-like mode can also transit to a saturated kink mode with a small but finite mode frequency. These results are consistent with the experimental observation of saturated kink mode between sawtooth crashes.

Development of a new foil compounded from carbon nanotubes and sputter-deposition carbon

International Nuclear Information System (INIS)

Hiroo Hasebe; Hironori Kuboki; Hiroki Okuno; Isao Yamane; Hiroshi Imao; Nobuhisa Fukunishi; Masayuki Kase; Osamu Kamigaito

2014-01-01

New carbon-nanotube-sputter-deposition-carbon (CNT-SDC) foils were developed and used in the U beam time at the RIKEN RI Beam Factory (RIBF) from October to December 2011. The lifetimes of these new foils were drastically extended, and stable, high-intensity U beams were successfully provided to users. The lifetime of the CNT-SDC foils was 2-5 C, which was 100 times longer than those of static C-foils previously used. The qualitative analysis of the CNT-SDC foils clearly showed that the CNT structure and bundles were broken by beam irradiation. In addition, it was found that CNT bundles in the CNT-SDC foil were grown after the carbon deposition procedure. This structure was considered to be the reason that the CNT-SDC foils maintain advantages of both CNT and SDC foils. (author)

Simulation of instabilities in the presence of beam feedback

International Nuclear Information System (INIS)

Myers, S.; Vancraeynest, J.

1985-01-01

The effect of longitudinal and transverse instabilities in electron storage rings is simulated by tracking many superparticles for many turns through a model of a machine lattice. This lattice model is defined by a series of machine elements such as RF stations (including longitudinal and transverse wake fields), beam pick-ups, feedback kicker magnets, etc. The machine elements may be interconnected in any specified way so as to produce for example feedback on the longitudinal or transverse beam motion. Each superparticle is treated in six-dimensional phase space and the effects of quantum excitation and radiation damping are included. Insofar as possible the program has been structured to allow study of all known single-beam effects (such as synchro-betatron resonances, transverse mode coupling etc.) in the presence or the absence of some form of beam feedback. The primary goal of the program was to study the effect of a reactive beam feedback system on the threshold for transverse mode coupling. (orig.)

BEAMPATH: a program library for beam dynamics simulation in linear accelerators

International Nuclear Information System (INIS)

Batygin, Y.K.

1992-01-01

A structured programming technique was used to develop software for space charge dominated beams investigation in linear accelerators. The method includes hierarchical program design using program independent modules and a flexible combination of modules to provide a most effective version of structure for every specific case of simulation. A modular program BEAMPATH was developed for 2D and 3D particle-in-cell simulation of beam dynamics in a structure containing RF gaps, radio-frequency quadrupoles (RFQ), multipole lenses, waveguides, bending magnets and solenoids. (author) 5 refs.; 2 figs

Raman spectroscopy of sputtered metal-graphene and metal-oxide-graphene interfaces

Science.gov (United States)

Chen, Ching-Tzu; Gajek, Marcin; Freitag, Marcus; Kuroda, Marcelo; Perebeinos, Vasili; Raoux, Simone

2012-02-01

In this talk, we report our recent development in sputtering deposition of magnetic and non-magnetic metal and metal-oxide thin films on graphene for applications in spintronics and nanoeleoctronics. TEM and SEM images demonstrate homogeneous coverage, uniform thickness, and good crystallinity of the sputtered films. Raman spectroscopy shows that the structure of the underlying graphene is well preserved, and the spectral weight of the defect D mode is comparable to that of the e-beam evaporated samples. Most significantly, we report the first observation of graphene-enhanced surface excitations of crystalline materials. Specifically, we discover two pronounced dispersive Raman modes at the interface of graphene and the nickel-oxide and cobalt-oxide films which we attribute to the strong light absorption and high-order resonant scattering process in the graphene layer. We will present the frequency-dependent, polarization-dependent Raman data of these two modes and discuss their microscopic origin.

Specific power reduction of an ion source due to heating and cathode sputtering of electrodes

International Nuclear Information System (INIS)

Hamilton, G.U.; Semashko, N.N.

The potentialities and limitations of the water-cooled ion-optical system of the ion source designed for continuous operation of the high-power neutral beam injector are determined. The following problems are analyzed: thermal expansion and deformation of electrodes, electrode sputtering as a result of bombardment, and heat transfer to turbulent flow of water

Open boundaries for particle beams within fit-simulations

International Nuclear Information System (INIS)

Balk, M.C.; Schuhmann, R.; Weiland, T.

2006-01-01

A method is proposed to simulate open boundary conditions for charged particle beams with v< c in time domain or frequency domain within the Finite Integration Technique (FIT). Inside the calculation domain the moving charged particles are represented by a line current. Further, the simulated field components at the boundary of the calculation domain have to be modified for an undisturbed transmission of the space-charge field. This can be realised by a 'scattered field' formulation. The method is verified by several calculations

TiOx deposited by magnetron sputtering: a joint modelling and experimental study

Science.gov (United States)

Tonneau, R.; Moskovkin, P.; Pflug, A.; Lucas, S.

2018-05-01

This paper presents a 3D multiscale simulation approach to model magnetron reactive sputter deposition of TiOx⩽2 at various O2 inlets and its validation against experimental results. The simulation first involves the transport of sputtered material in a vacuum chamber by means of a three-dimensional direct simulation Monte Carlo (DSMC) technique. Second, the film growth at different positions on a 3D substrate is simulated using a kinetic Monte Carlo (kMC) method. When simulating the transport of species in the chamber, wall chemistry reactions are taken into account in order to get the proper content of the reactive species in the volume. Angular and energy distributions of particles are extracted from DSMC and used for film growth modelling by kMC. Along with the simulation, experimental deposition of TiOx coatings on silicon samples placed at different positions on a curved sample holder was performed. The experimental results are in agreement with the simulated ones. For a given coater, the plasma phase hysteresis behaviour, film composition and film morphology are predicted. The used methodology can be applied to any coater and any films. This paves the way to the elaboration of a virtual coater allowing a user to predict composition and morphology of films deposited in silico.

Measurement of the force on microparticles in a beam of energetic ions and neutral atoms

International Nuclear Information System (INIS)

Trottenberg, Thomas; Schneider, Viktor; Kersten, Holger

2010-01-01

The force on microparticles in an energetic ion beam is investigated experimentally. Hollow glass microspheres are injected into the vertically upward directed beam and their trajectories are recorded with a charge-coupled device camera. The net force on the particles is determined by means of the measured vertical acceleration. The resulting beam pressures are compared with Faraday cup measurements of the ion current density and calorimetric measurements of the beam power density. Due to the neutral gas background, the beam consists, besides the ions, of energetic neutral atoms produced by charge-exchange collisions. It is found that the measured composition of the drag force by an ion and a neutral atom component agrees with a beam model that takes charge-exchange collisions into account. Special attention is paid to the momentum contribution from sputtered atoms, which is shown to be negligible in this experiment, but should become measurable in case of materials with high sputtering yields.

Simulations of intense heavy ion beams propagating through a gaseous fusion target chamber

International Nuclear Information System (INIS)

Welch, D.R.; Rose, D.V.; Oliver, B.V.; Genoni, T.C.; Clark, R.E.; Olson, C.L.; Yu, S.S.

2002-01-01

In heavy-ion inertial confinement fusion (HIF), an ion beam is transported several meters through the reactor chamber to the target. This standoff distance mitigates damage to the accelerator from the target explosion. For the high perveance beams and millimeter-scale targets under consideration, the transport method is largely determined by the degree of ion charge and current neutralization in the chamber. This neutralization becomes increasingly difficult as the beam interacts with the ambient chamber environment and strips to higher charge states. Nearly complete neutralization permits neutralized-ballistic transport (main-line HIF transport method), where the ion beam enters the chamber at roughly 3-cm radius and focuses onto the target. In the backup pinched-transport schemes, the beam is first focused outside the chamber before propagating at small radius to the target. With nearly complete charge neutralization, the large beam divergence is contained by a strong magnetic field resulting from roughly 50-kA net current. In assisted-pinched transport, a preformed discharge channel provides the net current and the discharge plasma provides nearly complete charge and current neutralization of the beam. In self-pinched transport, the residual net current results solely from the beam-driven breakdown of the ambient gas. Using hybrid particle-in-cell simulation codes, the behavior of HIF driver-scale beams in these three transport modes is examined. Simulations of neutralized ballistic transport, at a few-mTorr flibe pressure, show excellent neutralization given a preformed or photoionized (from the heated target) plasma. Two- and three-dimensional simulations of assisted-pinch transport in roughly 1-Torr Xe show the importance of attaining >1-μs magnetic diffusion time to limit self-field effects and achieve good transport efficiency. For Xe gas pressures ranging from 10-150 mTorr, calculations predict a robust self-magnetic force sufficient for self

Modeling the biophysical effects in a carbon beam delivery line by using Monte Carlo simulations

Science.gov (United States)

Cho, Ilsung; Yoo, SeungHoon; Cho, Sungho; Kim, Eun Ho; Song, Yongkeun; Shin, Jae-ik; Jung, Won-Gyun

2016-09-01

The Relative biological effectiveness (RBE) plays an important role in designing a uniform dose response for ion-beam therapy. In this study, the biological effectiveness of a carbon-ion beam delivery system was investigated using Monte Carlo simulations. A carbon-ion beam delivery line was designed for the Korea Heavy Ion Medical Accelerator (KHIMA) project. The GEANT4 simulation tool kit was used to simulate carbon-ion beam transport into media. An incident energy carbon-ion beam with energy in the range between 220 MeV/u and 290 MeV/u was chosen to generate secondary particles. The microdosimetric-kinetic (MK) model was applied to describe the RBE of 10% survival in human salivary-gland (HSG) cells. The RBE weighted dose was estimated as a function of the penetration depth in the water phantom along the incident beam's direction. A biologically photon-equivalent Spread Out Bragg Peak (SOBP) was designed using the RBE-weighted absorbed dose. Finally, the RBE of mixed beams was predicted as a function of the depth in the water phantom.

Investigation of the depth profile of ion beam induced nanopatterns on Si with simultaneous metal incorporation

Energy Technology Data Exchange (ETDEWEB)

Khanbabaee, Behnam; Arezki, Bahia; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Siegen (Germany); Cornejo, Marina; Frost, Frank [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

2011-07-01

Ion beam sputtering of semiconductor surfaces can modify the surface and produce a diversity of surface topographies such as periodic ripples or dot structures depended on sputtering parameters. Well ordered nanostructured surfaces have widely technological applications. Recent experiments have shown that the incorporation of metallic impurity atoms during the sputtering process plays a crucial role in pattern formation on the surfaces. These findings offer a new degree of freedom to control pattern formation. In this contribution we report on surface patterning due to Kr ion beam erosion on silicon surfaces with simultaneous Fe and Cr incorporation. We used X-ray reflectivity (XRR) to determine the depth profiles of metal ions as function of ion beam divergence angles and the mean incidence angle of the ions with respect to the surface normal. Depth profiles are correlated with degree of pattern formation determined by AFM. We show that the mean penetration depth and concentration of metal ions depends on the divergence angle of Kr beam provided by Kaufman source which supports the assumption that metal ions are created due to parasitic interaction of the Kr beam with the steel plate lining. The evaluated depth profile by XRR is in good agreement with SIMS and RBS results.

High-power sputtering employed for film deposition

International Nuclear Information System (INIS)

Shapovalov, V I

2017-01-01

The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

Spin pumping in ion-beam sputtered C o2FeAl /Mo bilayers: Interfacial Gilbert damping

Science.gov (United States)

Husain, Sajid; Kumar, Ankit; Barwal, Vineet; Behera, Nilamani; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2018-02-01

The spin-pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered C o2FeAl (CFA)/Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin-current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data have been analyzed using spin-pumping theory in terms of spin current pumped through the ferromagnet/nonmagnetic metal interface to deduce the real spin-mixing conductance and the spin-diffusion length, which are estimated to be 1.56 (±0.30 ) ×1019m-2 and 2.61 (±0.15 )nm , respectively. The damping constant is found to be 8.8 (±0.2 ) ×10-3 in the Mo(3.5 nm)-capped CFA(8 nm) sample corresponding to an ˜69 % enhancement of the original Gilbert damping 5.2 (±0.6 ) ×10-3 in the Al-capped CFA thin film. This is further confirmed by inserting the Cu dusting layer which reduces the spin transport across the CFA/Mo interface. The Mo layer thickness-dependent net spin-current density is found to lie in the range of 1 -4 MA m-2 , which also provides additional quantitative evidence of spin pumping in this bilayer thin-film system.

Source-to-target simulation of simultaneous longitudinal and transverse focusing of heavy ion beams

Directory of Open Access Journals (Sweden)

D. R. Welch

2008-06-01

Full Text Available Longitudinal bunching factors in excess of 70 of a 300-keV, 27-mA K^{+} ion beam have been demonstrated in the neutralized drift compression experiment [P. K. Roy et al., Phys. Rev. Lett. 95, 234801 (2005PRLTAO0031-900710.1103/PhysRevLett.95.234801] in rough agreement with particle-in-cell source-to-target simulations. A key aspect of these experiments is that a preformed plasma provides charge neutralization of the ion beam in the last one meter drift region where the beam perveance becomes large. The simulations utilize the measured ion source temperature, diode voltage, and induction-bunching-module voltage waveforms in order to determine the initial beam longitudinal phase space which is critical to accurate modeling of the longitudinal compression. To enable simultaneous longitudinal and transverse compression, numerical simulations were used in the design of the solenoidal focusing system that compensated for the impact of the applied velocity tilt on the transverse phase space of the beam. Complete source-to-target simulations, that include detailed modeling of the diode, magnetic transport, induction bunching module, and plasma neutralized transport, were critical to understanding the interplay between the various accelerator components in the experiment. Here, we compare simulation results with the experiment and discuss the contributions to longitudinal and transverse emittance that limit the final compression.

Laser fluorescence spectroscopy of sputtered uranium atoms

International Nuclear Information System (INIS)

Wright, R.B.; Pellin, M.J.; Gruen, D.M.; Young, C.E.

1979-01-01

Laser induced fluorescence (LIF) spectroscopy was used to study the sputtering of 99.8% 238 U metal foil when bombarded by normally incident 500 to 3000 eV Ne + , Ar + , Kr + , and O 2 + . A three-level atom model of the LIF processes is developed to interpret the observed fluorescent emission from the sputtered species. The model shows that close attention must be paid to the conditions under which the experiment is carried out as well as to the details of the collision cascade theory of sputtering. Rigorous analysis shows that when properly applied, LIF can be used to investigate the predictions of sputtering theory as regards energy distributions of sputtered particles and for the determination of sputtering yields. The possibility that thermal emission may occur during sputtering can also be tested using the proposed model. It is shown that the velocity distribution (either the number density or flux density distribution, depending upon the experimental conditions) of the sputtered particles can be determined using the LIF technique and that this information can be used to obtain a description of the basic sputtering mechanisms. These matters are discussed using the U-atom fluorescence measurements as a basis. The relative sputtering yields for various incident ions on uranium were also measured for the first time using the LIF technique. A surprisingly high fraction of the sputtered uranium atoms were found to occupy the low lying metastable energy levels of U(I). The population of the sputtered metastable atoms were found approximately to obey a Boltzman distribution with an effective temperature of 920 +- 100 0 K. 41 references

Simulation of the beam guiding of the SAPHIR experiment by means of a differential-equation model

International Nuclear Information System (INIS)

Greve, T.

1991-08-01

This paper shows the numerical simulation of a beam line by means of a model of differential equations simulating the beam line from the Bonn Electron Stretcher Accelerator ELSA to the SAPHIR spectrometer. Furthermore a method for calculating the initial values based on measurements of beam profiles is being discussed. (orig.) [de

Ion beam profiling from the interaction with a freestanding 2D layer

Directory of Open Access Journals (Sweden)

Ivan Shorubalko

2017-03-01

Full Text Available Recent years have seen a great potential of the focused ion beam (FIB technology for the nanometer-scale patterning of a freestanding two-dimensional (2D layer. Experimentally determined sputtering yields of the perforation process can be quantitatively explained using the binary collision theory. The main peculiarity of the interaction between the ion beams and the suspended 2D material lies in the absence of collision cascades, featured by no interaction volume. Thus, the patterning resolution is directly set by the beam diameters. Here, we demonstrate pattern resolution beyond the beam size and precise profiling of the focused ion beams. We find out that FIB exposure time of individual pixels can influence the resultant pore diameter. In return, the pore dimension as a function of the exposure dose brings out the ion beam profiles. Using this method of determining an ion-beam point spread function, we verify a Gaussian profile of focused gallium ion beams. Graphene sputtering yield is extracted from the normalization of the measured Gaussian profiles, given a total beam current. Interestingly, profiling of unbeknown helium ion beams in this way results in asymmetry of the profile. Even triangular beam shapes are observed at certain helium FIB conditions, possibly attributable to the trimer nature of the beam source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does.

Open boundaries for particle beams within fit-simulations

Energy Technology Data Exchange (ETDEWEB)

Balk, M.C. [Technische Universitaet Darmstadt, Institut fuer Theorie Elektromagnetischer Felder, Schlossgartenstr. 8, 64289 Darmstadt (Germany)]. E-mail: balk@temf.tu-darmstadt.de; Schuhmann, R. [Technische Universitaet Darmstadt, Institut fuer Theorie Elektromagnetischer Felder, Schlossgartenstr. 8, 64289 Darmstadt (Germany); Weiland, T. [Technische Universitaet Darmstadt, Institut fuer Theorie Elektromagnetischer Felder, Schlossgartenstr. 8, 64289 Darmstadt (Germany)

2006-03-01

A method is proposed to simulate open boundary conditions for charged particle beams with vsimulated field components at the boundary of the calculation domain have to be modified for an undisturbed transmission of the space-charge field. This can be realised by a 'scattered field' formulation. The method is verified by several calculations.

Calculation of beam quality correction factor using Monte Carlo simulation

International Nuclear Information System (INIS)

Kawachi, T.; Saitoh, H.; Myojoyama, A.; Katayose, T.; Kojima, T.; Fukuda, K.; Inoue, M.

2005-01-01

In recent years, a number of the CyberKnife systems (Accuray C., U.S.) have been increasing significantly. However, the CyberKnife has unique treatment head structure and beam collimating system. Therefore, the global standard protocols can not be adopted for absolute absorbed dose dosimetry in CyberKnife beam. In this work, the energy spectrum of photon and electron from CyberKnife treatment head at 80 cm SSD and several depths in water are simulated with conscientious geometry using by the EGS Monte Carlo method. Furthermore, for calculation of the beam quality correction factor k Q , the mean restricted mass stopping power and the mass energy absorption coefficient of air, water and several chamber wall and waterproofing sleeve materials are calculated. As a result, the factors k Q CyberKnife beam for several ionization chambers are determined. And the relationship between the beam quality index PDD(10) x in CyberKnife beam and k Q is described in this report. (author)

Characterization and modification of the interface of superconducting Nb/Cu cavities by ion beams