End-pumped Nd:YVO4 laser with reduced thermal lensing via the use of a ring-shaped pump beam.

Science.gov (United States)

Lin, Di; Andrew Clarkson, W

2017-08-01

A simple approach for alleviating thermal lensing in end-pumped solid-state lasers using a pump beam with a ring-shaped intensity distribution to decrease the radial temperature gradient is described. This scheme has been implemented in a diode-end-pumped Nd:YVO 4 laser yielding 14 W of TEM 00 output at 1.064 μm with a corresponding slope efficiency of 53% and a beam propagation factor (M 2 ) of 1.08 limited by available pump power. By comparison, the same laser design with a conventional quasi-top-hat pump beam profile of approximately equal radial extent yielded only 9 W of output before the power rolled over due to thermal lensing. Further investigation with the aid of a probe beam revealed that the thermal lens power was ∼30% smaller for the ring-shaped pump beam compared to the quasi-top-hat beam. The implications for further power scaling in end-pumped laser configurations are considered.

Laser optical pumping of sodium and lithium atom beams

International Nuclear Information System (INIS)

Cusma, J.T.

1983-01-01

The method of optical pumping with a continuous wave dye laser has been used to produce beams of polarized 23 Na atoms and polarized 6 Li atoms. Optical pumping of a 23 Na atom beam using either a multimode dye laser or a single frequency dye laser with a double passed acousto-optic modulator results in electron spin polarizations of 0.70-0.90 and nuclear spin polarizations of 0.75-0.90. Optical pumping of a 6 Li atom beam using a single frequency dye laser either with an acousto-optic modulator or with Doppler shift pumping results in electron spin polarizations of 0.77-0.95 and nuclear spin polarizations greater than 0.90. The polarization of the atom beam is measured using either the laser induced fluorescence in an intermediate magnetic field or a 6-pole magnet to determine the occupation probabilities of the ground hyperfine sublevels following optical pumping. The results of the laser optical pumping experiments agree with the results of a rate equation analysis of the optical pumping process which predicts that nearly all atoms are transferred into a single sublevel for our values of laser intensity and interaction time. The use of laser optical pumping in a polarized ion source for nuclear scattering experiments is discussed. The laser optical pumping method provides a means of constructing an intense source of polarized Li and Na ions

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

International Nuclear Information System (INIS)

Deri, R.J.

2011-01-01

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

Optically pumped polarized alkali atomic beams and targets

International Nuclear Information System (INIS)

Anderson, L.W.

1984-01-01

The optical pumping of 23 Na and 6 Li atomic beams is discussed. Experiments on the optical pumping of 23 Na atomic beams using either a single mode dye laser followed by a double passed acousto-optic modulator or a multimode dye laser are reported. The optical pumping of a 23 Na vapor target for use in a polarized H - ion source is discussed. Results on the use of viton as a wall coating with a long relaxation time are reported. 31 references, 6 figures, 3 tables

Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

Science.gov (United States)

Siddique, M.; Jamil, M.; Rasheed, A.; Areeb, F.; Javed, Asif; Sumera, P.

2018-01-01

We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

Modeling and simulation performance of sucker rod beam pump

Energy Technology Data Exchange (ETDEWEB)

Aditsania, Annisa, E-mail: annisaaditsania@gmail.com [Department of Computational Sciences, Institut Teknologi Bandung (Indonesia); Rahmawati, Silvy Dewi, E-mail: silvyarahmawati@gmail.com; Sukarno, Pudjo, E-mail: psukarno@gmail.com [Department of Petroleum Engineering, Institut Teknologi Bandung (Indonesia); Soewono, Edy, E-mail: esoewono@math.itb.ac.id [Department of Mathematics, Institut Teknologi Bandung (Indonesia)

2015-09-30

Artificial lift is a mechanism to lift hydrocarbon, generally petroleum, from a well to surface. This is used in the case that the natural pressure from the reservoir has significantly decreased. Sucker rod beam pumping is a method of artificial lift. Sucker rod beam pump is modeled in this research as a function of geometry of the surface part, the size of sucker rod string, and fluid properties. Besides its length, sucker rod string also classified into tapered and un-tapered. At the beginning of this research, for easy modeling, the sucker rod string was assumed as un-tapered. The assumption proved non-realistic to use. Therefore, the tapered sucker rod string modeling needs building. The numerical solution of this sucker rod beam pump model is computed using finite difference method. The numerical result shows that the peak of polished rod load for sucker rod beam pump unit C-456-D-256-120, for non-tapered sucker rod string is 38504.2 lb, while for tapered rod string is 25723.3 lb. For that reason, to avoid the sucker rod string breaks due to the overload, the use of tapered sucker rod beam string is suggested in this research.

Modeling and simulation performance of sucker rod beam pump

International Nuclear Information System (INIS)

Aditsania, Annisa; Rahmawati, Silvy Dewi; Sukarno, Pudjo; Soewono, Edy

2015-01-01

Artificial lift is a mechanism to lift hydrocarbon, generally petroleum, from a well to surface. This is used in the case that the natural pressure from the reservoir has significantly decreased. Sucker rod beam pumping is a method of artificial lift. Sucker rod beam pump is modeled in this research as a function of geometry of the surface part, the size of sucker rod string, and fluid properties. Besides its length, sucker rod string also classified into tapered and un-tapered. At the beginning of this research, for easy modeling, the sucker rod string was assumed as un-tapered. The assumption proved non-realistic to use. Therefore, the tapered sucker rod string modeling needs building. The numerical solution of this sucker rod beam pump model is computed using finite difference method. The numerical result shows that the peak of polished rod load for sucker rod beam pump unit C-456-D-256-120, for non-tapered sucker rod string is 38504.2 lb, while for tapered rod string is 25723.3 lb. For that reason, to avoid the sucker rod string breaks due to the overload, the use of tapered sucker rod beam string is suggested in this research

Rovibrational optical pumping of a molecular beam

Science.gov (United States)

Cournol, A.; Pillet, P.; Lignier, H.; Comparat, D.

2018-03-01

The preparation of molecules in well-defined internal states is essential for various studies in fundamental physics and physical chemistry. It is thus of particular interest to find methods that increase the brightness of molecular beams. Here, we report on rotational and vibrational pumpings of a supersonic beam of barium monofluoride molecules. With respect to previous works, the time scale of optical vibrational pumping has been greatly reduced by enhancing the spectral power density in the vicinity of the appropriate molecular transitions. We demonstrate a complete transfer of the rovibrational populations lying in v″=1 -3 into the vibrational ground-state v″=0 . Rotational pumping, which requires efficient vibrational pumping, has been also demonstrated. According to a Maxwell-Boltzmann description, the rotational temperature of our sample has been reduced by a factor of ˜8 . In this fashion, the population of the lowest rotational levels increased by more than one order of magnitude.

Optical trapping with Bessel beams generated from semiconductor lasers

International Nuclear Information System (INIS)

Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U

2014-01-01

In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

Experimental installation for excitation of semiconductors and dielectrics by picosecond pulsed electron beam and electric field

International Nuclear Information System (INIS)

Nasibov, A.S.; Berezhnoj, K.V.; Shapkin, P.V.; Reutova, A.G.; Shunajlov, S.A.; Yalandin, M.I.

2009-01-01

The experimental facility for shaping high-voltage pulses with amplitudes of 30-250 kV and durations of 100-500 ps and electron beams with a current density of up to 1000 A/cm -2 is described. The facility was built using the principle of energy compression of a pulse from a nanosecond high-voltage generator accompanied by the subsequent pulse sharpening and cutting. The setup is equipped with two test coaxial chambers for radiation excitation in semiconductor crystals by an electron beam or an electric field in air at atmospheric pressure and T = 300 K. Generation of laser radiation in the visible range under field and electron pumping was attained in ZnSSe, ZnSe, ZnCdS, and CdS (462, 480, 515, and 525 nm, respectively). Under the exposure to an electric field (up to 10 6 V x cm -1 ), the laser generation region is as large as 300-500 μm. The radiation divergence was within 5 Deg C. The maximum integral radiation power (6 kW at λ = 480 nm) was obtained under field pumping of a zinc selenide sample with a single dielectric mirror [ru

A Phase-Controlled Optical Parametric Amplifier Pumped by Two Phase-Distorted Laser Beams

International Nuclear Information System (INIS)

Hong-Yan, Ren; Lie-Jia, Qian; Peng, Yuan; He-Yuan, Zhu; Dian-Yuan, Fan

2010-01-01

We theoretically study the phase characteristic of optical parametric amplification (OPA) or chirped pulse OPA (OPCPA) pumped by two phase-distorted laser beams. In the two-beam-pumped optical parametric amplification (TBOPA), due to spatial walk-off, both of the pump phase distortions will be partly transferred to signal in a single crystal so as to degrade the signal beam-quality, which will be more serious in high-energy OPCPA. An OPA configuration with a walkoff-compensated crystal pair is demonstrated for reducing the signal phase distortion experienced in the first stage and ensuring the signal phase independent of two pump phase distortions through the second crystal, hence maintaining the signal beam-quality. Such a TBOPA is similar to the conventional quantum laser amplifier by means of eliminating its sensitivity to the phase and number of the pump beams

Direct cryosorption pumping of an energetic hydrogen ion beam

International Nuclear Information System (INIS)

Schwenterly, S.W.; Ryan, P.M.; Tsai, C.C.

1979-01-01

Cryosorption pumps (CSP) are a prime candidate for the pumping of helium and deuterium-tritium (D-T) in tokamak divertor systems and may also see service in neutral beam injectors. However, the ability of a CSP to take high energy ions escaping from a plasma or neutral beam has not previously been demonstrated. In this study we arranged a 10-cm ion source of the type used in the Oak Ridge Tokamak (ORMAK) to inject a beam of ions directly into the inlet of a CSP. The pump contained two chevron baffles at 100K and 15K as well as a 15K cryosorption surface covered with a type 5A molecular sieve. The cryosurfaces were cooled by a closed-cycle helium refrigerator. For hydrogen ion pulses up to 11.5-keV energy and 1.3-A current, the pressure maintained during the pulse was only a few percent higher than that maintained with an equal flow of cold neutral gas. Pulse lengths of 100-300 ms were used. Calorimetric measurements showed that 40-60% of the I-V power was incident on the pump inlet. Cool-down and regeneration behavior of the pump will also be discussed

Landau quantization effects on hole-acoustic instability in semiconductor plasmas

Science.gov (United States)

Sumera, P.; Rasheed, A.; Jamil, M.; Siddique, M.; Areeb, F.

2017-12-01

The growth rate of the hole acoustic waves (HAWs) exciting in magnetized semiconductor quantum plasma pumped by the electron beam has been investigated. The instability of the waves contains quantum effects including the exchange and correlation potential, Bohm potential, Fermi-degenerate pressure, and the magnetic quantization of semiconductor plasma species. The effects of various plasma parameters, which include relative concentration of plasma particles, beam electron temperature, beam speed, plasma temperature (temperature of electrons/holes), and Landau electron orbital magnetic quantization parameter η, on the growth rate of HAWs, have been discussed. The numerical study of our model of acoustic waves has been applied, as an example, to the GaAs semiconductor exposed to electron beam in the magnetic field environment. An increment in either the concentration of the semiconductor electrons or the speed of beam electrons, in the presence of magnetic quantization of fermion orbital motion, enhances remarkably the growth rate of the HAWs. Although the growth rate of the waves reduces with a rise in the thermal temperature of plasma species, at a particular temperature, we receive a higher instability due to the contribution of magnetic quantization of fermions to it.

Spatial modification of laser beam under the influence of Λ-type strong pump

International Nuclear Information System (INIS)

Lee, Won Kyu; Noh, Young Chul; Jeon, Jin Ho; Lee, Jai Hyung; Chang, Joon Sung

1999-01-01

The laser beam propagating through the resonant medium undergo severe deformation because of nonlinear interaction such as self-focusing, self-defocusing, etc. When strong pump beam coexists with the probe beam, propagation characteristics can be changed. We use samarium (Sm) vapor as the nonlinear medium. Probe laser is tuned around 4f 6 6s 27 F 0 -> 4f 6 ( 7 F)6s6p( 1 P 0 ) transition line of Sm (561.601 nm) and the pump laser is tuned around 4f 6 6s 27 F 1 -> 4f 6 ( 7 F)6s6p( 1 P 0 ) transition line of Sm (572.019 nm). The probe and the pump beams are Λ-type configuration. The transmission of the probe beam is changed as the intensity and the detuning of the pump beam are varied. The degree of self-focusing is also modified. (author)

Mode structure of delay-coupled semiconductor lasers: influence of the pump current

International Nuclear Information System (INIS)

Erzgraeber, Hartmut; Krauskopf, Bernd; Lenstra, Daan

2005-01-01

We consider two identical, mutually delay-coupled semiconductor lasers and show that their compound laser modes (CLMs)-the basic continuous wave solutions-depend rather sensitively on the pump current of the lasers. Specifically, we show with figures and accompanying animations how the underlying CLM structure and the associated locking region, where both lasers operate stably with the same frequency, change as a function of the pump current. Our results provide a natural transition between rather different CLM structures that have been reported in the literature. Moreover, we demonstrate how the locking region as well as the different types of instabilities at its boundary depend on the pump current. This is of fundamental interest for the dynamics of coupled lasers and their possible application

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

Science.gov (United States)

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A High-Energy Good-Beam-Quality Krypton-Lamp-Pumped Nd:YAG Solid-State Laser with One Pump Cavity

Institute of Scientific and Technical Information of China (English)

LIU Xue-Sheng; WANG Zhi-Yong; YAN Xin; CAO Ying-Hua

2008-01-01

We investigate a high-energy good-beam-quality krypton-lamp-pumped pulsed Nd:YAG solid-state laser with one pump cavity.The symmetrical resonator laser is developed and is rated at 80 J with beam parameter product 12mm mrad.The total system electro-optics efficiency of the lamp-pumped YAG laser is as high as 3.3% and the stability of output energy is ±2% with pulse width tunable between 0.1 ms and 10ms.The experimental results are consistent with the theoretical analysis and simulation.

Optically pumped semiconductor lasers for atomic and molecular physics

Science.gov (United States)

Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

2015-03-01

Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

Uses of laser optical pumping to produce polarized ion beams

International Nuclear Information System (INIS)

Anderson, L.W.

1983-01-01

Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H - or 3 He - ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams

Control and calculation of the titanium sublimation pumping speed and re-ionisation in the MAST neutral beam injectors

International Nuclear Information System (INIS)

McAdams, R.

2015-01-01

Highlights: • The titanium sublimation pumps for the MAST neutral beam injectors are described. • Evaporation regimes are established to give constant pumping speed for the titanium sublimation pumps. • The MCNP code is used to calculate the pumping speeds and gas profiles in the neutral beam injectors. • The gas profiles are then used to calculate the level of re-ionisation in the beamline. - Abstract: A high pumping speed is required in neutral beam injectors to minimise re-ionisation of the neutral beams. The neutral beam injectors on MAST use titanium sublimation pumps. These pumps do not have a constant pumping speed; their pumping speed depends on the gettering surface history and on both the integrated and applied gas load. In this paper we describe a method of maintaining a constant pumping speed, through different evaporation schemes, specifically suitable for operations of the MAST neutral beam injector beamlines for both short and relatively long beam pulses by measurement of the pressure in the beamline. In addition the MCNP code is then used to calculate the pumping speed and gas profile in the beamline by adjusting the input pumping speed to match the measured pressure. This allows the resulting gas profile to be used for calculation of the re-ionisation levels and an example is given

Excitonic bistabilities, instabilities and chaos in laser-pumped semiconductor

International Nuclear Information System (INIS)

Nguyen Ba An; Nguyen Trung Dan; Hoang Xuan Nguyen

1992-07-01

The Hurwitz criteria are used for a stability analysis of the steady state excitonic optical bistability curves in a semiconductor pumped by an external laser resonant with the exciton level. Besides the middle branch of the bistability curves which is unstable in the sense of the linear stability theory, we have found other domains of instability in the upper and lower branches of the steady state curves. Numerical results show that a possible route to chaos in the photon-exciton system is period-doubling self-oscillation process. The influence of the presence of free carriers that coexist with the excitons is also discussed. (author). 16 refs, 6 figs

Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

International Nuclear Information System (INIS)

Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

2005-01-01

A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

Formation of helical electron beams by electrostatic pumping

International Nuclear Information System (INIS)

Barroso, J.J.; Spassovsky, L.P.; Stellati, C.

1993-01-01

A non-adiabatic gun for a 35 GHz, 100 kw gyrotron is presented. A 50 kV, 10 A laminar helical electron beam has been achieved with a perpendicular to parallel velocity ratio of 1.9. A non-adiabatic change of the pumping electric field is used to impart rotational velocity to the beam particles which are extracted at the cathode surface in a direction parallel to the guiding magnetic field. (author)

Assessment of load of beam-balanced pumping units by electric motor power indicators

Directory of Open Access Journals (Sweden)

Д. И. Шишлянников

2017-10-01

Full Text Available The results of experimental studies on the loading of beam-balanced pumping units (BP of sucker rod- pumping equipment (SRPE are presented. It is noted that the key factor that has the most significant effect causing the SRPE failure is the balance of the beam pumping unit, which determines the amount of specific energy consumption for the rise of reservoir fluid and the level of dynamic loads on the machine units. The urgency of using software-recording systems for estimating the loading of units of oil field pumping installations is substantiated. The principle of operation and design of the «AKD-SK» software recording system is described. The prospects of using this method for controlling the performance parameters and evaluating the technical state of the sicker rod-pumping units is proved on the basis of an analysis of the magnitude and nature of the changes in the loads of drive motors determined by the registration of the instantaneous values of the consumed power. The main provisions of the methodology for analyzing the watt-meters of drive motors of the sucker rod-pumping units are outlined. The nature of the manifestation of the main defects of submersible pumps and beam-balanced pumping units is described. The results of pilot-industrial tests of the beam-balanced pumping units equipped with advanced permanent magnet motors and intelligent control stations are presented. It is proved that the use of permanent magnet motors allows to reduce the specific energy consumption for the rise of reservoir fluid, which increases the efficiency of the SRPE.However, the presence of transient processes and generator operating modes of the permanent magnet motors results in the occurrence of significant dynamic loads, which, due to the rigid fixing of the rotor of magnet motor on the reducer shaft, negatively affect the life of the gearbox bearings. It has been shown that the lack of its own bearings in the tested motors causes a high probability

LD-pumped erbium and neodymium lasers with high energy and output beam quality

Science.gov (United States)

Kabanov, Vladimir V.; Bezyazychnaya, Tatiana V.; Bogdanovich, Maxim V.; Grigor'ev, Alexandr V.; Lebiadok, Yahor V.; Lepchenkov, Kirill V.; Ryabtsev, Andrew G.; Ryabtsev, Gennadii I.; Shchemelev, Maxim A.

2013-05-01

Physical and fabrication peculiarities which provide the high output energy and beam quality for the diode pumped erbium glass and Nd:YAG lasers are considered. Developed design approach allow to make passively Q-switched erbium glass eye-safe portable laser sources with output energy 8 - 12 mJ (output pulse duration is less than 25 ns, pulse repetition rate up to 5 Hz) and beam quality M2 less than 1.3. To reach these values the erbium laser pump unit parameters were optimized also. Namely, for the powerful laser diode arrays the optimal near-field fill-factor, output mirror reflectivity and heterostructure properties were determined. Construction of advanced diode and solid-state lasers as well as the optical properties of the active element and the pump unit make possible the lasing within a rather wide temperature interval (e.g. from minus forty till plus sixty Celsius degree) without application of water-based chillers. The transversally pumped Nd:YAG laser output beam uniformity was investigated depending on the active element (AE) pump conditions. In particular, to enhance the pump uniformity within AE volume, a special layer which practically doesn't absorb the pump radiation but effectively scatters the pump and lasing beams, was used. Application of such layer results in amplified spontaneous emission suppression and improvement of the laser output beam uniformity. The carried out investigations allow us to fabricate the solid-state Nd:YAG lasers (1064 nm) with the output energy up to 420 mJ at the pulse repetition rate up to 30 Hz and the output energy up to 100 mJ at the pulse repetition rate of of 100 Hz. Also the laser sources with following characteristics: 35 mJ, 30 Hz (266 nm); 60 mJ, 30 Hz (355 nm); 100 mJ, 30 Hz (532 nm) were manufactured on the base of the developed Nd:YAG quantrons.

Production of polarized negative deuterium ion beam with dual optical pumping in KEK

Energy Technology Data Exchange (ETDEWEB)

Kinsho, M.; Ikegami, K.; Takagi, A. [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan); Mori, Y.

1997-02-01

To obtain highly nuclear-spin vector polarized negative deuterium ion beam, a dual optically pumped polarized negative deuterium ion source has been developed at KEK. It is possible to select a pure nuclear-spin state with this scheme, and negative deuterium ion beam with 100% nuclear-spin vector polarization can be produced in principle. We have obtained about 70% of nuclear-spin vector polarized negative deuterium ion beam so far. This result may open up a new possibilities for the optically pumped polarized ion source. (author)

Development of distributed ion pumps for g-2 beam vacuum system

Energy Technology Data Exchange (ETDEWEB)

Hseuh, H.C.; Mapes, M.; Snydstrup, L.

1993-06-01

Distributed ion pumps (DIPs) will be used for the beam vacuum system of the g-2 muon storage ring. The magnetic field intensity and alignment angle at the DIP locations are not uniform. The pumping behavior of several different ion pump elements under this non-uniform magnetic field has been studied. The results are compared with the theoretical predictions. Based on these results, the optimum design of the g-2 DIPs has been developed.

Development of distributed ion pumps for g-2 beam vacuum system

Energy Technology Data Exchange (ETDEWEB)

Hseuh, H.C.; Mapes, M.; Snydstrup, L.

1993-01-01

Distributed ion pumps (DIPs) will be used for the beam vacuum system of the g-2 muon storage ring. The magnetic field intensity and alignment angle at the DIP locations are not uniform. The pumping behavior of several different ion pump elements under this non-uniform magnetic field has been studied. The results are compared with the theoretical predictions. Based on these results, the optimum design of the g-2 DIPs has been developed.

Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Kozlovskii, Vladimir I; Korostelin, Yurii V; Skasyrsky, Yan K; Shapkin, P V; Trubenko, P A; Dianov, Evgenii M

1998-01-01

The method of molecular beam epitaxy on a ZnSe substrate was used to grow a ZnCdSe/ZnSe structure with 115 quantum wells. This structure was made up into a cavity which included part of the substrate. Lasing was excited by longitudinal pumping with a scanning electron beam of E e = 40 - 70 keV energy. At T = 80 K for E e = 65 keV the threshold current density was 60 A cm -2 and the output power was 0.15 W at the 465 nm wavelength. At T= 300 K the lasing (λ= 474 nm) occurred in the ZnSe substrate. (lasers)

1-kilowatt CW all-fiber laser oscillator pumped with wavelength-beam-combined diode stacks.

Science.gov (United States)

Xiao, Y; Brunet, F; Kanskar, M; Faucher, M; Wetter, A; Holehouse, N

2012-01-30

We have demonstrated a monolithic cladding-pumped ytterbium-doped single all-fiber laser oscillator generating 1 kW of CW signal power at 1080 nm with 71% slope efficiency and near diffraction-limited beam quality. Fiber components were highly integrated on "spliceless" passive fibers to promote laser efficiency and alleviate non-linear effects. The laser was pumped through a 7:1 pump combiner with seven 200-W 91x nm fiber-pigtailed wavelength-beam-combined diode-stack modules. The signal power of such a single all-fiber laser oscillator showed no evidence of roll-over, and the highest output was limited only by available pump power.

Investigation of pump-to-seed beam matching on output features of Rb and Cs vapor laser amplifiers

Science.gov (United States)

Shen, Binglin; Huang, Jinghua; Xu, Xingqi; Xia, Chunsheng; Pan, Bailiang

2018-05-01

Taking into account the beam radii of pump light and seed laser along the entire length of the cell and their intensities in the cross section, a physical model with ordinary differential equation methods for alkali vapor amplifiers is established. Applied to the reported optically pumped Rb and diode-pumped Cs vapor amplifiers, the model shows good agreement between the calculated and measured dependence of amplified power on the seed power. A larger width of the spontaneous emission region as compared to the widths of pump absorption and laser emission regions, which will result in very high energy losses, is observed in the cell. Influence of pump and seed beam waists on output performance is calculated, showing that the pump and seed beam should match each other not only in shape but also in size, thus an optimal combination of beam radii is very important for efficient operation of alkali vapor amplifiers.

Effect of pump-beam conditions on dual polarization oscillations in a microchip Nd:GdVO{sub 4} laser

Energy Technology Data Exchange (ETDEWEB)

Lin, C-C; Jiang, I-M [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Ko, J-Y; Tsai, K-T; Cheng, Y-T; Ho, M-C, E-mail: jyko@nknucc.nknu.edu.t [Department of Physics, National Kaohsiung Normal University, Kaohsiung 824, Taiwan (China)

2009-08-28

This study investigated the input-output characteristics of a laser-diode-end-pumped microchip Nd:GdVO{sub 4} laser under different pump-beam focusing conditions by varying the magnifications of the microscope objective lenses and pump-beam positions on a chip. Dual-polarization oscillations were generated in the entire pump region using pumping conditions associated with different temperature gradients.

Giant narrowband twin-beam generation along the pump-energy propagation direction

Science.gov (United States)

Pérez, Angela M.; Spasibko, Kirill Yu; Sharapova, Polina R.; Tikhonova, Olga V.; Leuchs, Gerd; Chekhova, Maria V.

2015-07-01

Walk-off effects, originating from the difference between the group and phase velocities, limit the efficiency of nonlinear optical interactions. While transverse walk-off can be eliminated by proper medium engineering, longitudinal walk-off is harder to avoid. In particular, ultrafast twin-beam generation via pulsed parametric down-conversion and four-wave mixing is only possible in short crystals or fibres. Here we show that in high-gain parametric down-conversion, one can overcome the destructive role of both effects and even turn them into useful tools for shaping the emission. In our experiment, one of the twin beams is emitted along the pump Poynting vector or its group velocity matches that of the pump. The result is markedly enhanced generation of both twin beams, with the simultaneous narrowing of angular and frequency spectrum. The effect will enable efficient generation of ultrafast twin photons and beams in cavities, waveguides and whispering-gallery mode resonators.

Dry vacuum pumps

International Nuclear Information System (INIS)

Sibuet, R

2008-01-01

For decades and for ultimate pressure below 1 mbar, oil-sealed Rotary Vane Pumps have been the most popular solution for a wide range of vacuum applications. In the late 80ies, Semiconductor Industry has initiated the development of the first dry roughing pumps. Today SC applications are only using dry pumps and dry pumping packages. Since that time, pumps manufacturers have developed dry vacuum pumps technologies in order to make them attractive for other applications. The trend to replace lubricated pumps by dry pumps is now spreading over many other market segments. For the Semiconductor Industry, it has been quite easy to understand the benefits of dry pumps, in terms of Cost of Ownership, process contamination and up-time. In this paper, Technology of Dry pumps, its application in R and D/industries, merits over conventional pumps and future growth scope will be discussed

Analysis of defects near the surface and the interface of semiconductors by monoenergetic positron beam

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro

1989-01-01

A monoenergetic low-speed positron beam line is constructed and a study is made on defects near the surface and the interface of semiconductors by using the beam line. Sodium-22 is used as beam source. Ion implantation, though being an essential technique for semiconductor integrated circuit production, can introduce lattice defects, affecting the yield and reliability of the resultant semiconductor devices. Some observations are made on the dependence of the Doppler broadening on the depth, and the ΔS-E relationship in P + -ion implanted SiO 2 (43nm)-Si. These observations demonstrate that monoenergetic positron beam is useful to detect hole-type defects resulting from ion implantation over a very wide range of defect density. Another study is made for the detection of defects near an interface. Positrons are expected to drift when left in an electric field with a gradient. Observations made here show that positrons can be concentrated at any desired interface by introducing an electric field intensity gradient in the oxide. This process also serves for accurate measurement of the electronic structure at the interface, and the effect of ion implantation and radiations on the interface. (N.K.)

Direct emission of chirality controllable femtosecond LG01 vortex beam

Science.gov (United States)

Wang, S.; Zhang, S.; Yang, H.; Xie, J.; Jiang, S.; Feng, G.; Zhou, S.

2018-05-01

Direct emission of a chirality controllable ultrafast LG01 mode vortex optical beam from a conventional z-type cavity design SESAM (SEmiconductor Saturable Absorber Mirror) mode locked LD pumped Yb:Phosphate laser has been demonstrated. A clean 360 fs vortex beam of ˜45.7 mW output power has been achieved. A radial shear interferometer has been built to determine the phase singularity and the wavefront helicity of the ultrafast output laser. Theoretically, it is found that the LG01 vortex beam is obtained via the combination effect of diagonal HG10 mode generation by off-axis pumping and the controllable Gouy phase difference between HG10 and HG01 modes in the sagittal and tangential planes. The chirality of the LG01 mode can be manipulated by the pump position to the original point of the laser cavity optical axis.

Thermally induced diffraction losses for a Gaussian pump beam and optimization of the mode-to-pump ratio in an end-pumped Nd:GdVO4 laser

International Nuclear Information System (INIS)

Wang, Y T; Li, W J; Pan, L L; Yu, J T; Zhang, R H

2013-01-01

The analytical model of thermally induced diffraction losses for a Gaussian pump beam are derived as functions of the mode-to-pump ratio and pump power in end-pumped Nd-doped lasers considering the energy transfer upconversion effects. The mode-to-pump ratio is optimized based on it. The results show that the optimum mode-to-pump ratio with the thermally induced diffraction losses is less than 0.65, and it is less than the results in which the thermally induced diffraction losses are neglected. The theoretical model is applied to a diode-end-pumped Nd:GdVO 4 laser operating at 1342 nm, and the theoretical calculations are in good agreement with the experimental results. (paper)

Understanding and eliminating artifact signals from diffusely scattered pump beam in measurements of rough samples by time-domain thermoreflectance (TDTR)

Energy Technology Data Exchange (ETDEWEB)

Sun, Bo [Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576 (Singapore); Koh, Yee Kan, E-mail: mpekyk@nus.edu.sg [Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576 (Singapore); Centre of Advanced 2D Materials, National University of Singapore, Singapore 117542 (Singapore)

2016-06-15

Time-domain thermoreflectance (TDTR) is a pump-probe technique frequently applied to measure the thermal transport properties of bulk materials, nanostructures, and interfaces. One of the limitations of TDTR is that it can only be employed to samples with a fairly smooth surface. For rough samples, artifact signals are collected when the pump beam in TDTR measurements is diffusely scattered by the rough surface into the photodetector, rendering the TDTR measurements invalid. In this paper, we systemically studied the factors affecting the artifact signals due to the pump beam leaked into the photodetector and thus established the origin of the artifact signals. We find that signals from the leaked pump beam are modulated by the probe beam due to the phase rotation induced in the photodetector by the illumination of the probe beam. As a result of the modulation, artifact signals due to the leaked pump beam are registered in TDTR measurements as the out-of-phase signals. We then developed a simple approach to eliminate the artifact signals due to the leaked pump beam. We verify our leak-pump correction approach by measuring the thermal conductivity of a rough InN sample, when the signals from the leaked pump beam are significant. We also discuss the advantages of our new method over the two-tint approach and its limitations. Our new approach enables measurements of the thermal conductivity of rough samples using TDTR.

Short-wavelength soft-x-ray laser pumped in double-pulse single-beam non-normal incidence

International Nuclear Information System (INIS)

Zimmer, D.; Ros, D.; Guilbaud, O.; Habib, J.; Kazamias, S.; Zielbauer, B.; Bagnoud, V.; Ecker, B.; Aurand, B.; Kuehl, T.; Hochhaus, D. C.; Neumayer, P.

2010-01-01

We demonstrated a 7.36 nm Ni-like samarium soft-x-ray laser, pumped by 36 J of a neodymium:glass chirped-pulse amplification laser. Double-pulse single-beam non-normal-incidence pumping was applied for efficient soft-x-ray laser generation. In this case, the applied technique included a single-optic focusing geometry for large beam diameters, a single-pass grating compressor, traveling-wave tuning capability, and an optimized high-energy laser double pulse. This scheme has the potential for even shorter-wavelength soft-x-ray laser pumping.

Enhancement of photorefractive two wave mixing gain with a Bessel pump beam

International Nuclear Information System (INIS)

Biswas, Dhruba J.; Padma Nilaya, J.; Danailov, Miltcho, B.

2001-07-01

The performance of a photo-refractive amplifier has been shown to greatly improve when a diffraction free beam is employed as the pump source. It has been established experimentally that this behaviour owes primarily to the ability of this beam to propagate in the photo-refractive crystal will less fanning. A qualitative explanation for the reduction of fanning with Bessel beam is offered. (author)

Beam quality improvement by population-dynamic-coupled combined guiding effect in end-pumped Nd:YVO4 laser oscillator

Science.gov (United States)

Shen, Yijie; Gong, Mali; Fu, Xing

2018-05-01

Beam quality improvement with pump power increasing in an end-pumped laser oscillator is experimentally realized for the first time, to the best of our knowledge. The phenomenon is caused by the population-dynamic-coupled combined guiding effect, a comprehensive theoretical model of which has been well established, in agreement with the experimental results. Based on an 888 nm in-band dual-end-pumped oscillator using four tandem Nd:YVO4 crystals, the output beam quality of M^2= 1.1/1.1 at the pump power of 25 W is degraded to M^2 = 2.5/1.8 at 75 W pumping and then improved to M^2= 1.8/1.3 at 150 W pumping. The near-TEM_{00} mode is obtained with the highest continuous-wave output power of 72.1 W and the optical-to-optical efficiency of 48.1%. This work demonstrates great potential to further scale the output power of end-pumped laser oscillator while keeping good beam quality.

Fine structure and optical pumping of spins in individual semiconductor quantum dots

Science.gov (United States)

Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

2008-11-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

Fine structure and optical pumping of spins in individual semiconductor quantum dots

International Nuclear Information System (INIS)

Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L

2008-01-01

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

Closely spaced mirror pair for reshaping and homogenizing pump beams in laser amplifiers

International Nuclear Information System (INIS)

Bass, I.L.

1992-12-01

Channeling a laser beam by multiple reflections between two closely-spaced, parallel or nearly parallel mirrors, serves to reshape and homogenize the beam at the output gap between the mirrors. Application of this device to improve the spatial overlap of a copper laser pump beam with the signal beam in a dye laser amplifier is described. This technique has been applied to the AVLIS program at the Lawrence Livermore National Laboratory

Load beam unit replaceable inserts for dry coal extrusion pumps

Science.gov (United States)

Saunders, Timothy; Brady, John D.

2012-11-13

A track assembly for a particulate material extrusion pump according to an exemplary aspect of the present disclosure includes a link assembly with a roller bearing. An insert mounted to a load beam located such that the roller bearing contacts the insert.

Runaway electron beam control for longitudinally pumped metal vapor lasers

Science.gov (United States)

Kolbychev, G. V.; Kolbycheva, P. D.

1995-08-01

Physics and techniques for producing of the pulsed runaway electron beams are considered. The main obstacle for increasing electron energies in the beams is revealed to be a self- breakdown of the e-gun's gas-filled diode. Two methods to suppress the self-breakdown and enhance the volumetric discharge producing the e-beam are offered and examined. Each of them provides 1.5 fold increase of the ceiling potential on the gun. The methods also give the ways to control several guns simultaneously. Resulting in the possibility of realizing the powerful longitudinal pumping of metal-vapor lasers on self-terminated transitions of atoms or ions.

Lasing and ion beam doping of semiconductor nanowires

Energy Technology Data Exchange (ETDEWEB)

Geburt, Sebastian

2013-01-31

Semiconductor nanowires exhibit extraordinary optical properties like highly localized light emission, efficient waveguiding and light amplification. Even the stimulation of laser oscillations can be achieved at optical pumping, making nanowires promising for optoelectronic applications. For successful integration into future devices, three major key challenges have to be faced: (1) the understanding of the fundamental properties, (2) the modification of the emission characteristics and (3) the investigation of the efficiency-limiting factors. All key challenges are addressed in this thesis: (1) The fundamental properties of CdS nanowire have been investigated to uncover the size limits for photonic nanowire lasers. Laser oscillations were observed at room temperature and the emission characteristics were correlated to the morphology, which allowed the determination of a minimum diameter and length necessary for lasing. (2) The emission characteristics of ZnO nanowires have been successfully modified by ion beam doping with Co. The structural investigations revealed a good recovery of the ion induced damage in the crystal lattice. Optical activation of the implanted Co ions was achieved and an intense intra-3d-emission confirmed successful modification. (3) The temporal decay of excited luminescence centers strongly depends on the interplay of luminescent ions and defects, thus offering an approach to investigate the efficiency-limiting processes. Mn implanted ZnS nanowires were investigated, as the temporal decay of the incorporated Mn ions can be described by a Foerster energy transfer model modified for nanostructures. The defect concentration was varied systematically by several approaches and the model could successfully fit the transients in all cases. The emission properties of Tb implanted ZnS nanowires were investigated and the temporal decay of the intra-4f-emission could also be fitted by the model, proving its accuracy for an additional element.

Lasing and ion beam doping of semiconductor nanowires

International Nuclear Information System (INIS)

Geburt, Sebastian

2013-01-01

Semiconductor nanowires exhibit extraordinary optical properties like highly localized light emission, efficient waveguiding and light amplification. Even the stimulation of laser oscillations can be achieved at optical pumping, making nanowires promising for optoelectronic applications. For successful integration into future devices, three major key challenges have to be faced: (1) the understanding of the fundamental properties, (2) the modification of the emission characteristics and (3) the investigation of the efficiency-limiting factors. All key challenges are addressed in this thesis: (1) The fundamental properties of CdS nanowire have been investigated to uncover the size limits for photonic nanowire lasers. Laser oscillations were observed at room temperature and the emission characteristics were correlated to the morphology, which allowed the determination of a minimum diameter and length necessary for lasing. (2) The emission characteristics of ZnO nanowires have been successfully modified by ion beam doping with Co. The structural investigations revealed a good recovery of the ion induced damage in the crystal lattice. Optical activation of the implanted Co ions was achieved and an intense intra-3d-emission confirmed successful modification. (3) The temporal decay of excited luminescence centers strongly depends on the interplay of luminescent ions and defects, thus offering an approach to investigate the efficiency-limiting processes. Mn implanted ZnS nanowires were investigated, as the temporal decay of the incorporated Mn ions can be described by a Foerster energy transfer model modified for nanostructures. The defect concentration was varied systematically by several approaches and the model could successfully fit the transients in all cases. The emission properties of Tb implanted ZnS nanowires were investigated and the temporal decay of the intra-4f-emission could also be fitted by the model, proving its accuracy for an additional element.

Pump-beam-instability limits to Raman-gain-doublet ''fast-light'' pulse propagation

International Nuclear Information System (INIS)

Stenner, Michael D.; Gauthier, Daniel J.

2003-01-01

We investigate the behavior of a system for generating ''fast-light'' pulses in which a bichromatic Raman pumping beam is used to generate optical gain at two frequencies and a region of anomalous dispersion between them. It is expected that increasing the gain will increase the pulse advancement. However, as the gain increases, the pumping field becomes increasingly distorted, effectively limiting the pulse advancement. We observe as much as 12% of the input pump power converted to orthogonal polarization, broadening of the initially bichromatic pump field (25 MHz initial frequency separation) to more than 2.5 GHz, and a temporal collapse of the pump beam into an erratic train of sub-500-ps pulses. The instability is attributed to the combined effects of the cross modulation instability and stimulated Raman scattering. Extreme distortion of an injected pulse that should (absent the instability) experience an advancement of 21% of its width is observed. We conclude that the fast-light pulse advancement is limited to just a few percent of the pulse width using this pulse advancement technique. The limitation imposed by the instability is important because careful study of the information velocity in fast-light pulses requires that pulse advancement be large enough to distinguish the velocities of different pulse features. Possible methods for achieving pulse advancement by avoiding the distortion caused by the instability are discussed

Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

International Nuclear Information System (INIS)

Cocquelin, B.

2009-02-01

Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

The Nike electron-beam-pumped KrF laser amplifiers

International Nuclear Information System (INIS)

Sethian, J.D.; Pawley, C.J.; Obenschain, S.P.

1997-01-01

Nike is a recently completed multikilojoule krypton-fluoride (KrF) laser that has been built to study the physics of direct-drive inertial confinement fusion. The two final amplifiers of the Nike laser are both electron-beam-pumped systems. This paper describes these two amplifiers, with an emphasis on the pulsed power. The smaller of the two has a 20 x 20 cm aperture, and produces an output laser beam energy in excess of 100 J. This 20 cm Amplifier uses a single 12 kJ Marx generator to inject two 300 kV, 75 kA, 140 ns flat-top electron beams into opposite sides of the laser cell. The larger amplifier in Nike has a 60 x 60 cm aperture, and amplifies the laser beam up to 5 kJ. This 60 cm amplifier has two independent electron beam systems. Each system has a 170 kJ Marx generator that produces a 670 kV, 540 kA, 240 ns flat-top electron beam. Both amplifiers are complete, fully integrated into the laser, meet the Nike system requirements, and are used routinely for laser-target experiments

Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method

International Nuclear Information System (INIS)

Xu Xingsheng; Chen Hongda; Xiong Zhigang; Jin Aizi; Gu Changzhi; Cheng Bingying; Zhang Daozhong

2007-01-01

In this paper, we introduced the fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam machine, it shows that the method of focused-ion beam can fabricate two-dimensional photonic crystal and photonic crystal device efficiently, and the quality of the fabricated photonic crystal is high. Using the focused-ion beam method, we fabricate photonic crystal wavelength division multiplexer, and its characteristics are analyzed

Electron beam pumped KrF lasers for fusion energy

International Nuclear Information System (INIS)

Sethian, J.D.; Friedman, M.; Giuliani, J.L. Jr.; Lehmberg, R.H.; Obenschain, S.P.; Kepple, P.; Wolford, M.; Hegeler, F.; Swanekamp, S.B.; Weidenheimer, D.; Welch, D.; Rose, D.V.; Searles, S.

2003-01-01

In this paper, we describe the development of electron beam pumped KrF lasers for inertial fusion energy. KrF lasers are an attractive driver for fusion, on account of their demonstrated very high beam quality, which is essential for reducing imprint in direct drive targets; their short wavelength (248 nm), which mitigates the growth of plasma instabilities; and their modular architecture, which reduces development costs. In this paper we present a basic overview of KrF laser technology as well as current research and development in three key areas: electron beam stability and transport; KrF kinetics and laser propagation; and pulsed power. The work will be cast in context of the two KrF lasers at the Naval Research Laboratory, The Nike Laser (5 kJ, single shot), and The Electra Laser (400-700 J repetitively pulsed)

A split-beam probe-pump-probe scheme for femtosecond time resolved protein X-ray crystallography

Directory of Open Access Journals (Sweden)

Jasper J. van Thor

2015-01-01

Full Text Available In order to exploit the femtosecond pulse duration of X-ray Free-Electron Lasers (XFEL operating in the hard X-ray regime for ultrafast time-resolved protein crystallography experiments, critical parameters that determine the crystallographic signal-to-noise (I/σI must be addressed. For single-crystal studies under low absorbed dose conditions, it has been shown that the intrinsic pulse intensity stability as well as mode structure and jitter of this structure, significantly affect the crystallographic signal-to-noise. Here, geometrical parameters are theoretically explored for a three-beam scheme: X-ray probe, optical pump, X-ray probe (or “probe-pump-probe” which will allow experimental determination of the photo-induced structure factor amplitude differences, ΔF, in a ratiometric manner, thereby internally referencing the intensity noise of the XFEL source. In addition to a non-collinear split-beam geometry which separates un-pumped and pumped diffraction patterns on an area detector, applying an additional convergence angle to both beams by focusing leads to integration over mosaic blocks in the case of well-ordered stationary protein crystals. Ray-tracing X-ray diffraction simulations are performed for an example using photoactive yellow protein crystals in order to explore the geometrical design parameters which would be needed. The specifications for an X-ray split and delay instrument that implements both an offset angle and focused beams are discussed, for implementation of a probe-pump-probe scheme at the European XFEL. We discuss possible extension of single crystal studies to serial femtosecond crystallography, particularly in view of the expected X-ray damage and ablation due to the first probe pulse.

Electrostatic mechanism of shaping the wave micro-relief on the surface of a semiconductor, sputtered by an ion beam

International Nuclear Information System (INIS)

Grigor'ev, A.I.

2000-01-01

The effect of the electric field formed due to the surface charging, is not accounted for in the weakly-developed theoretical models for the ordered micro-relief formation on the surface of a semiconductor under the impact of an ion beam. It is shown, that the problem on modeling the physical mechanism of forming the ordered wave micro-relief on the semiconductor surface under the impact of a high-energy ion beam may be interpreted as an electrostatic one [ru

Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

International Nuclear Information System (INIS)

Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

1994-01-01

The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

Collisional pumping for the production of intense spin-polarized neutral beams: target considerations. Revision

International Nuclear Information System (INIS)

Stearns, J.W.; Burrell, C.F.; Kaplan, S.N.; Pyle, R.V.; Ruby, L.; Schlachter, A.S.

1985-04-01

Polarized beams at intensity levels heretofore not considered feasible have recently been proposed for heating and fueling fusion plasmas. Polarized-beam fueling could increase fusion rates by 50% as well as allow control of the directionality of the fusion products. A process which we have recently described, and called collisional pumping, promises to produce beams of polarized ions vastly more intense than producible by current methods

Pump-probe spectroscopy of spin-injection dynamics in double quantum wells of diluted magnetic semiconductor

International Nuclear Information System (INIS)

Nishibayashi, K.; Aoshima, I.; Souma, I.; Murayama, A.; Oka, Y.

2006-01-01

Dynamics of spin injection has been investigated in a double quantum well (DQW) composed of a diluted magnetic semiconductor by the pump-probe transient absorption spectroscopy in magnetic field. The DQW consists of a non-magnetic well (NMW) of CdTe and a magnetic well (MW) of Cd 0.92 Mn 0.08 Te. The MW shows a transient absorption saturation in the exciton band for more than 200 ps after the optical pumping, while the exciton photoluminescence does not arise from the MW. In the NMW, the circular polarization degree of the transient absorption saturation shows an increase with increasing time. The results are interpreted by the individual tunneling of spin-polarized electrons and holes from the MW to the NMW with different tunneling times. Depolarization processes of the carrier spins in the MW and the NMW are also discussed

Amplification of picosecond pulse by electron-beam pumped KrF laser amplifiers. Denshi beam reiki KrF laser zofukuki ni yoru piko byo pulse no zofuku

Energy Technology Data Exchange (ETDEWEB)

Okuda, I.; Tomie, T.; Owadano, Y.; Yano, M. (Electrotechnical Laboratory, Tsukuba (Japan))

1991-08-20

Experiments on the amplification of a picosecond pulse by electron-beam pumped KrF laser amplifiers were carried out for the purpose of its application to the field such as excitation light source for soft X-ray laser which requires large energy besides peak power. The picosecond pulse was amplified by a discharge pumped KrF amplifier and two electron-beam pumped KrF amplifiers(at the middle stage and the final stage). The energy of 4J, which was the largest energy for short pulse excimer laser so far, was obtained by these devices. About 90% of the window area of the final amplifier with 29cm diameter was filled by the input beam, and energy density of the picosecond beam reached 3.9 times saturation energy density. Measured energy of amplified spontaneous emission(ASE) showed good agreement with the theoretically estimated value. Most of ASE was derived from the discharge pumped laser as the first amplifier. As for the focused power density, the power density ratio of the picosecond pulse to ASE was estimated to be as large as 10{sup 5}. 11 refs., 4 figs.

Large area electron beam pumped krypton fluoride laser amplifier

International Nuclear Information System (INIS)

Sethian, J.D.; Obenschain, S.P.; Gerber, K.A.; Pawley, C.J.; Serlin, V.; Sullivan, C.A.; Webster, W.; Deniz, A.V.; Lehecka, T.; McGeoch, M.W.; Altes, R.A.; Corcoran, P.A.; Smith, I.D.; Barr, O.C.

1997-01-01

Nike is a recently completed multi-kilojoule krypton fluoride (KrF) laser that has been built to study the physics of direct drive inertial confinement fusion. This paper describes in detail both the pulsed power and optical performance of the largest amplifier in the Nike laser, the 60 cm amplifier. This is a double pass, double sided, electron beam-pumped system that amplifies the laser beam from an input of 50 J to an output of up to 5 kJ. It has an optical aperture of 60 cm x 60 cm and a gain length of 200 cm. The two electron beams are 60 cm high x 200 cm wide, have a voltage of 640 kV, a current of 540 kA, and a flat top power pulse duration of 250 ns. A 2 kG magnetic field is used to guide the beams and prevent self-pinching. Each electron beam is produced by its own Marx/pulse forming line system. The amplifier has been fully integrated into the Nike system and is used on a daily basis for laser-target experiments. copyright 1997 American Institute of Physics

Electron-beam-pumped phosphors

International Nuclear Information System (INIS)

Goldhar, J.; Krupke, W.F.

1985-01-01

Electron-beam excitation of solid-state scintillators, or phosphors, can result in efficient generation of visible light confined to relatively narrow regions of the spectrum. The conversion efficiency can exceed 20%, and, with proper choice of phosphors, radiation can be obtained anywhere from the near infrared (IR) to the near ultraviolet (UV). These properties qualify the phosphors as a potentially useful pump source for new solid-state lasers. New phosphors are being developed for high-brightness television tubes that are capable of higher power dissipation. Here, an epitaxial film of fluorescing material is grown on a crystalline substrate with good thermal properties. For example, researchers at North American Philips Laboratories have developed a cerium-doped yttrium aluminum garnet (YAG) grown on a YAG substrate, which has operated at 1 A/cm 2 at 20 kV without observed thermal quenching. The input power is higher by almost two orders of magnitude than that which can be tolerated by a conventional television phosphor. The authors describe tests of these new phosphors

Optical orientation in ferromagnet/semiconductor hybrids

International Nuclear Information System (INIS)

Korenev, V L

2008-01-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

Optical orientation in ferromagnet/semiconductor hybrids

Science.gov (United States)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

Apparatus for servicing a jet pump hold down beam in a nuclear reactor

International Nuclear Information System (INIS)

Howell, D.A.; Hydeman, J.E.; Slater, J.L.; Bodnar, R.J.; Golick, L.R.; Sckera, R.S.; Roth, C.H. Jr.

1991-01-01

This patent describes an apparatus for replacing the hold down beam of a fluid circulating jet pump mounted in a nuclear reactor, the hold down beam having a beam body, a pair of opposed beam tabs and a pair of opposed beam positioning trunnions extending outwardly from the beam body. It comprises a housing having a lower surface configured to be positionable over the body of the hold down beam; means coupled to the housing for engaging the beam trunnions and securing the beam body against the lower surface of the housing; means coupled to the housing for depressing the beam tabs while the beam body is secured against the lower surface of the housing; means coupled to the trunnion engaging means and the beam tab depressing means for selectively actuating the trunnion engaging means and the beam tab depressing means from a position remote from the nuclear reactor; and means connectable to the housing for selectively changing the directional orientation of the beam

Below-bandgap photoreflection spectroscopy of semiconductor laser structures

International Nuclear Information System (INIS)

Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

2004-01-01

A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

Large-area high-power VCSEL pump arrays optimized for high-energy lasers

Science.gov (United States)

Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

2012-06-01

Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

Hydrodynamic pumping of a quantum Fermi liquid in a semiconductor heterostructure

Science.gov (United States)

Heremans, J. J.; Kantha, D.; Chen, H.; Govorov, A. O.

2003-03-01

We present experimental results for a pumping mechanism observed in mesoscopic structures patterned on two-dimensional electron systems in GaAs/AlGaAs heterostructures. The experiments are performed at low temperatures, in the ballistic regime. The effect is observed as a voltage or current signal corresponding to carrier extraction from sub-micron sized apertures, when these apertures are swept by a beam of ballistic electrons. The carrier extraction, phenomenologically reminiscent of the Bernoulli pumping effect in classical fluids, has been observed in various geometries. We ascertained linearity between measured voltage and injected current in all experiments, thereby excluding rectification effects. The linear response, however, points to a fundamental difference from the Bernoulli effect in classical liquids, where the response is nonlinear and quadratic in terms of the velocity. The temperature dependence of the effect will also be presented. We thank M. Shayegan (Princeton University) for the heterostructure growth, and acknowledge support from NSF DMR-0094055.

Development of a Pump-Probe System using a Non-Coated ZnSe Beam Splitter Cube for an MIR-FEL

CERN Document Server

Heya, Manabu; Horiike, Hiroshi; Ishii, Katsonuri; Suzuki, Sachiko

2004-01-01

A pump-probe technique is essential for a proper understanding of laser interaction with tissue and material. Our pump-probe system divides the incident mid-infrared Free Electron Laser (MIR-FEL) into two beams with equal intensity, and crosses simultaneously the two incoming beams at the same position. One is for a pump beam, another is for a probe beam. Time-resolved absorption spectroscopy involving this technique gives us information on the vibrational dynamics of molecules. We have developed this system for an MIR-FEL using a non-coating ZnSe beam splitter cube. The beam splitter cube is composed of two ZnSe prisms in the shape like a trapezoid. The two pulses with equal intensity are generated due to Fresnel reflection and transmission at the boundary between two prisms, then are reflected due to total reflection at other side boundaries between each prism and air, and illuminate simultaneously the same spot. We have conducted a proof-of-concept of experiment of this system using an MIR-FEL. We showed t...

Nonlinear effects in optical pumping of a cold and slow atomic beam

KAUST Repository

Porfido, N.

2015-10-12

By photoionizing hyperfine (HF) levels of the Cs state 62P3/2 in a slow and cold atom beam, we find how their population depends on the excitation laser power. The long time (around 180μs) spent by the slow atoms inside the resonant laser beam is large enough to enable exploration of a unique atom-light interaction regime heavily affected by time-dependent optical pumping. We demonstrate that, under such conditions, the onset of nonlinear effects in the population dynamics and optical pumping occurs at excitation laser intensities much smaller than the conventional respective saturation values. The evolution of population within the HF structure is calculated by numerical integration of the multilevel optical Bloch equations. The agreement between numerical results and experiment outcomes is excellent. All main features in the experimental findings are explained by the occurrence of “dark” and “bright” resonances leading to power-dependent branching coefficients.

Fiber-based modulated optical reflectance configuration allowing for offset pump and probe beams

Science.gov (United States)

Fleming, A.; Folsom, C.; Jensen, C.; Ban, H.

2016-12-01

A new fiber-based modulated optical reflectance configuration is developed in this work. The technique maintains the fiber-based heating laser (pump) and detection laser (probe) in close proximity at a fixed separation distance in a ceramic ferrule. The pump beam periodically heats the sample inducing thermal waves into the sample. The probe beam measures the temperature response at a known distance from the pump beam over a range of heating modulation frequencies. The thermal diffusivity of the sample may be calculated from the phase response between the input heat flux and the temperature response of a sample having a reflective surface. The unique measurement configuration is ideal for in situ measurements and has many advantages for laboratory-based systems. The design and development of the system are reported along with theoretical justification for the experimental design. The thermal diffusivities of Ge and SiC are measured and found to be within 10% of reported literature values. The diffusivity for SiO2 is measured with a relative difference of approximately 100% from the literature value when the ferrule is in contact with the sample. An additional measurement was made on the SiO2 sample with the ferrule not in contact resulting in a difference of less than 2% from the literature value. The difference in the SiO2 measurement when the ferrule is in contact with the sample is likely due to a parallel heat transfer path through the dual-fiber ferrule assembly.

The detection of electron-beam-induced current in junctionless semiconductor

International Nuclear Information System (INIS)

Tan, Chee Chin; Ong, Vincent K. S.

2010-01-01

The scanning electron microscope is a versatile tool and its electron beam techniques have been widely used in semiconductor material and device characterizations. One of these electron beam techniques is the electron-beam-induced current (EBIC) technique. One of the limitations of the conventional EBIC technique is that it requires charge collecting junctions which may not be readily available in junctionless samples such as bare substrates unless some special sample preparation procedure such as the fabrication of a diffused junction is done on the junctionless sample. In this paper, the technique of detecting EBIC current in junctionless samples with the use of a two-point probe is presented. It is found that the EBIC current is independent from its physical parameter when the sample thickness is greater than 4L; the width to the right of probe 2 and the width to the left of probe 1 are greater than 2L and 8L, respectively. The parameters affecting this technique of detecting the EBIC current such as the depth of the generation volume, probe spacing, and the applied bias are also discussed in this paper. A commercially available two-dimensional device simulator was used to verify this technique.

Numerical study on the selective excitation of Helmholtz-Gauss beams in end-pumped solid-state digital lasers with the control of the laser gain transverse position provided by off-axis end pumping

Science.gov (United States)

Tsai, Ko-Fan; Chu, Shu-Chun

2018-03-01

This study proposes a complete and unified method for selective excitation of any specified nearly nondiffracting Helmholtz-Gauss (HzG) beam in end-pumped solid-state digital lasers. Four types of the HzG beams: cosine-Gauss beams, Bessel-Gauss beams, Mathieu-Gauss beams, and, in particular, parabolic-Gauss beams are successfully demonstrated to be generated with the proposed methods. To the best of the authors’ knowledge, parabolic-Gauss beams have not yet been directly generated from any kind of laser system. The numerical results of this study show that one can successfully achieve any lasing HzG beams directly from the solid-state digital lasers with only added control of the laser gain transverse position provided by off-axis end pumping. This study also presents a practical digital laser set-up for easily manipulating off-axis pumping in order to achieve the control of the laser gain transverse gain position in digital lasers. The reported results in this study provide advancement of digital lasers in dynamically generating nondiffracting beams. The control of the digital laser cavity gain position creates the possibility of achieving real-time selection of more laser modes in digital lasers, and it is worth further investigation in the future.

Experimental study on the characteristics of semiconductor opening switch

CERN Document Server

Su Jian Cang; Ding Yong Zhong; Song Zhi Min; Ding Zhen Jie; Liu Guo Zhi

2002-01-01

An experimental set-up is developed to measure the characteristics of semiconductor opening switch (SOS). The parameters, such as interruption impedance, current int eruption time, voltage gain, pulse duration and energy transfer efficiency, are studied experimentally. The experimental results show that forward pumping time and reverse pumping time are important parameters for semiconductor opening switches. The influences of forward pumping time and reverse pumping time on interruption time, voltage gain, and energy transfer efficiency are obtained. In the interruption process, the impedance variation is divided into three phases: that is rapid increasing phase, slow change phase and completely interruption phase

The use of GaSe semiconductor detectors for monitoring high energy muon beams

CERN Document Server

Mancini, A M; Murri, R; Quirini, A; Rizzo, A; Vasanelli, L

1976-01-01

GaSe semiconductor detectors have been successfully tested during one year for monitoring muon beams in the GeV range in the neutrino experiment at CERN. Their performances are comparable with those of commercial Si surface barrier detectors for this particular application. Crystal growth, detector fabrication and characterization are briefly described. Various advantages (cost, ruggedness, resistance to radiation damage, manufacturing simplicity, etc.) are discussed. (8 refs).

Multi-Fresnel lenses pumping approach for improving high-power Nd:YAG solar laser beam quality.

Science.gov (United States)

Liang, Dawei; Almeida, Joana

2013-07-20

To significantly improve the present-day high-power solar laser beam quality, a three-stage multi-Fresnel lenses approach is proposed for side-pumping either a Nd:YAG single-crystal or a core-doped Sm(3+)Nd:YAG ceramic rod. Optimum pumping and laser beam parameters are found through ZEMAX and LASCAD numerical analysis. The proposed scheme offers a uniform absorption profile along the rod. 167 W laser power can be achieved, corresponding to 29.3 W/m(2) collection efficiency. High brightness figure of merit of 8.34 W is expected for the core-doped rod within a convex-concave resonator, which is 1300 times higher than that of the most-recent high-power solar laser.

Application of Metal-Semiconductor-Metal (MSM) Photodetectors for Transverse and Longitudinal Intra-Bunch Beam Diagnostics

CERN Document Server

Steinhagen, R J; Boland, M J; Lucas, T G; Rassool, R P

2013-01-01

The performance reach of modern accelerators is often governed by the ability to reliably measure and control the beam stability. In high-brightness lepton and high-energy hadron accelerators, the use of optical diagnostic techniques is becoming more widespread as the required bandwidth, resolution and high RF beam power level involved limit the use of traditional electro-magnetic RF pick-up based methods. This contribution discusses the use of fibre-coupled ultra-fast Metal-Semiconductor-Metal Photodetectors (MSM-PD) as an alternative, dependablemeans to measure signals derived from electro-optical and synchrotron-light based diagnostics systems. It describes the beam studies performed at CERN’s CLIC Test Facility (CTF3) and the Australian Synchrotron to assess the feasibility of this technology as a robust, wide-band and sensitive technique for measuring transverse intra-bunch and bunch-by-bunch beam oscillations, longitudinal beam profiles, un-bunched beam population and beam-halo profiles. The amplifica...

Semiconductor laser shearing interferometer

International Nuclear Information System (INIS)

Ming Hai; Li Ming; Chen Nong; Xie Jiaping

1988-03-01

The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

Simple and efficient method of spin-polarizing a metastable helium beam by diode laser optical pumping

International Nuclear Information System (INIS)

Granitza, B.; Salvietti, M.; Torello, E.; Mattera, L.; Sasso, A.

1995-01-01

Diode laser optical pumping to produce a highly spin-polarized metastable He beam to be used in a spin-polarized metastable atom deexcitation spectroscopy experiment on magnetized surfaces is described. Efficient pumping of the beam is performed by means of an SDL-6702 distributed Bragg reflector diode laser which yields 50 mW of output power in a single longitudinal mode at 1083 nm, the resonance wavelength for the 2 3 S→2 3 P 0,1,2 (D 0 , D 1 , and D 2 ) transitions of He*. The light is circularly polarized by a quarter-wave plate, allowing easy change of the sense of atomic polarization. The laser frequency can be locked to the atomic transition for several hours by phase-sensitive detection of the saturated absorption signal in a He discharge cell. Any of the three transitions of the triplet system can be pumped with the laser but the maximum level of atomic polarization of 98.5% is found pumping the D 2 line. copyright 1995 American Institute of Physics

Effect of an ultrafast laser induced plasma on a relativistic electron beam to determine temporal overlap in pump-probe experiments.

Science.gov (United States)

Scoby, Cheyne M; Li, R K; Musumeci, P

2013-04-01

In this paper we report on a simple and robust method to measure the absolute temporal overlap of the laser and the electron beam at the sample based on the effect of a laser induced plasma on the electron beam transverse distribution, successfully extending a similar method from keV to MeV electron beams. By pumping a standard copper TEM grid to form the plasma, we gain timing information independent of the sample under study. In experiments discussed here the optical delay to achieve temporal overlap between the pump electron beam and probe laser can be determined with ~1 ps precision. Copyright © 2012 Elsevier B.V. All rights reserved.

Orbital angular momentum correlations with a phase-flipped Gaussian mode pump beam

CSIR Research Space (South Africa)

Romero, J

2012-08-01

Full Text Available -1 Journal of Optics August 2012/ Vol. 14. No 8 Orbital angular momentum correlations with a phase- flipped Gaussian mode pump beam J Romero1,2, D Giovannini1, M G McLaren3,4, E J Galvez5, A Forbes3,4 and M J Padgett1 1 School of Physics...

Temperature-Induced Wavelength Shift of Electron-Beam-Pumped Lasers from CdSe, CdS, and ZnO

DEFF Research Database (Denmark)

Hvam, Jørn Märcher

1971-01-01

Experimental results on the temperature dependence of the laser frequency and threshold pump power are presented in the range from liquid helium to room temperature for electron-beam-pumped CdSe, CdS, and ZnO lasers. A linear shift of the laser frequency at high temperatures and a relatively slow...

Diode pumped 1kHz high power Nd:YAG laser with excellent beam quality

NARCIS (Netherlands)

Godfried, Herman; Godfried, H.P; Offerhaus, Herman L.

1997-01-01

The design and operation of a one kilohertz diode pumped all solid-state Nd:YAG master oscillator power amplifier system with a phase conjugate mirror is presented. The setup allows high power scaling without reduction in beam quality.

Development and characterization of semiconductor materials by ion beams. Final report of a co-ordinated research project

International Nuclear Information System (INIS)

2002-06-01

This CRP was recommended by the Consultants meeting on Ion Beam Techniques Applied to Semiconductor and Related Advanced Materials, held in April 1997 in Vienna. The consultants proposed to have a CRP in the field of application of MeV ion beams for the development and characterization of semiconductor materials. The CRP was approved and a first RCM was held in Vienna between 2-5 June 1998, in order to stimulate ideas and to promote collaborations among CRP participants. The goals and practical outcomes of the CRP were defined and several specific topics were identified including: optoelectronic characterization of semiconductor materials and devices by ion microbeams, characterization of thin films, defect transformations in semiconductors, light element analysis. One important recommendation was that sample exchanges among different laboratories be strongly encouraged. The participants presented individual activities on their projects, all subjects of research were identified and linked with approved individual projects. Collaboration among the participants was discussed and established. Some modifications to work plans were adopted. As proposed during the first RCM, the final RCM was held at the Ruder Boskovic Institute, Zagreb, Croatia, between 25 and 29 September 2000, with the purpose of reviewing/discussing the results achieved during the course of the CRP and to prepare a draft of the final report and associated publication. This document contains summary of the CRP and ten individual reports presented by participants. Each of the reports has been indexed separately

Tokamak pump limiters

International Nuclear Information System (INIS)

Conn, R.W.

1984-05-01

Recent experiments with a scoop limiter without active internal pumping have been carried out in the PDX tokamak with up to 6MW of auxiliary neutral beam heating. Experiments have also been done with a rotating head pump limiter in the PLT tokamak in conjunction with RF plasma heating. Extensive experiments have been done in the ISX-B tokamak and first experiments have been completed with the ALT-I limiter in TEXTOR. The pump limiter modules in these latter two machines have internal getter pumping. Experiments in ISX-B are with ohmic and auxiliary neutral beam heating. The results in ISX-B and TEXTOR show that active density control and particle removal is achieved with pump limiters. In ISX-B, the boundary layer (or scape-off layer) plasma partially screens the core plasma from gas injection. In both ISX-B and TEXTOR, the pressure internal to the module scales linearly with plasma density but in ISX-B, with neutral beam injection, a nonlinear increase is observed at the highest densities studied. Plasma plugging is the suspected cause. Results from PDX suggest that a region may exist in which core plasma energy confinement improves using a pump limiter during neutral beam injection. Asymmetric radial profiles and an increased edge electron temperature are observed in discharges with improved confinement. The injection of small amounts of neon into ISX-B has more clearly shown an improved electron core energy confinement during neutral beam injection. While carried out with a regular limiter, this Z-mode of operation is ideal for use with pump limiters and should be a way to achieve energy confinement times similar to values for H-mode tokamak plasmas. The implication of all these results for the design of a reactor pump limiter is described

Tokamak pump limiters

International Nuclear Information System (INIS)

Conn, R.W.; California Univ., Los Angeles

1984-01-01

Recent experiments with a scoop limiter without active internal pumping have been carried out in the PDX tokamak with up to 6 MW of auxiliary neutral beam heating. Experiments have also been performed with a rotating head pump limiter in the PLT tokamak in conjunction with RF plasma heating. Extensive experiments have been done in the ISX-B tokamak and first experiments have been completed with the ALT-I limiter in TEXTOR. The pump limiter modules in these latter two machines have internal getter pumping. Experiments in ISX-B are with ohmic and auxiliary neutral beam heating. The results in ISX-B and TEXTOR show that active density control and particle removal is achieved with pump limiters. In ISX-B, the boundary layer (or scrape-off layer) plasma partially screens the core plasma from gas injection. In both ISX-B and TEXTOR, the pressure internal to the module scales linearly with plasma density but in ISX-B, with neutral beam injection, a nonlinear increase is observed at the highest densities studied. Plasma plugging is the suspected cause. Results from PDX suggest that a regime may exist in which core plasma energy confinement improves using a pump limiter during neutral beam injection. Asymmetric radial profiles and an increased edge electron temperature are observed in discharges with improved confinement. The injection of small amounts of neon into ISX-B has more clearly shown an improved electron core energy confinement during neutral beam injection. While carried out with a regular limiter, this 'Z-mode' of operation is ideal for use with pump limiters and should be a way to achieve energy confinement times similar to values for H-mode tokamak plasmas. The implication of all these results for the design of a reactor pump limiter is described. (orig.)

Dual-wavelength vortex beam with high stability in a diode-pumped Yb:CaGdAlO4 laser

Science.gov (United States)

Shen, Yijie; Meng, Yuan; Fu, Xing; Gong, Mali

2018-05-01

We present a stable dual-wavelength vortex beam carrying orbital angular momentum (OAM) with two spectral peaks separated by a few terahertz in a diode-pumped Yb:CaGdAlO4 (CALGO) laser. The dual-wavelength spectrum is controlled by the pump power and off-axis loss in a laser resonator, arising from the broad emission bandwidth of Yb:CALGO. The OAM beam is obtained by a pair of cylindrical lenses serving as a π/2 convertor for high-order Hermite–Gaussian modes. The stability is verified by the fact that a 1\\hbar OAM beam with two spectral peaks at 1046.1 nm and 1057.2 nm (3.01 THz interval) can steadily operate for more than 3 h. It has great potential for scaling the application of OAM beams in terahertz spectroscopy, high-resolution interferometry, and so on.

Recent advance to 3 × 10(-5) rad near diffraction-limited beam divergence of dye laser with transverse-discharge flash-lamp pumping.

Science.gov (United States)

Trusov, K K

1994-02-20

A new experimental setup of a Rhodamine 6G dye laser with a transverse-discharge flash-lamp-pumping system is presented. It differs from a previous setup [Sov. J. Quantum Electron. 16, 468-471 (1989)] in that it has a larger laser beam aperture (32 mm) and higher pumping energy (1 kJ), which made it possible to test the scalability and reach near diffraction-limited laser beam divergence of 3 × 10(-5) rad FWHM at beam energy 1.4 J. The effect of spectral dispersion in the active medium and of other optical elements on the beam divergence is also discussed.

Resonant Tunneling Spin Pump

Science.gov (United States)

Ting, David Z.

2007-01-01

The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

Effect of thermal lens on beam quality and mode matching in LD pumped Er-Yb-codoped phosphate glass microchip laser

Energy Technology Data Exchange (ETDEWEB)

Liu Shujing; Song Feng; Cai Hong; Li Teng; Tian Bin; Wu Zhaohui; Tian Jianguo [Photonics Center, Nankai University, Tianjin 300071 (China); Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457 (China)

2008-02-07

The theoretical values of the thermal focal length and laser beam waist are derived from the theoretical model and transformation theory, respectively. The values of thermal focal length, laser beam waist and the far field divergence angle were experimentally measured in a laser diode (LD) pumped erbium-ytterbium(Er-Yb)-codoped phosphate microchip glass laser. As an extension of thermal effect studies, we investigate the role of thermal lens on beam quality and the mode matching between the pump and the laser, which affects laser efficiency in TEM{sub 00} operation. The study shows that the experimental data are in good agreement with the theoretical predictions.

The pursuit of electrically-driven organic semiconductor lasers

NARCIS (Netherlands)

Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

2014-01-01

Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

Mechanical design and fabrication of the transverse field focusing (TFF) matching/pumping section for negative ion based neutral beam systems

International Nuclear Information System (INIS)

Purgalis, P.; Anderson, O.A.; Koehler, G.W.; Maruyama, Y.; Matuk, C.A.; Owren, H.M.; Paterson, J.A.; Wandesforde, A.H.

1985-11-01

A negative ion based neutral beam injection system is under development as proof-of-principle demonstration of a radiation-hardened beamline. The beamline consists of a source, a pre-accelerator, a matching/pumping (M/P) section, and an accelerator. The function of the M/P section is to provide vacuum pumping, to remove electrons, to provide beam edge confinement, to compress the beam thickness to match the requirements of the accelerator, and to transport the 1A, 80 keV, 25 cm high H - ribbon beam to the accelerator entrance. Details of the design and fabrication of the M/P section are presented. The M/P section has eight separate, high voltage electrodes forming an ''S'' shaped beam path. Electrons are removed by the electron trap in this path. Beam edge confinement and thickness compression is accomplished by the curvature and face contour of the electrodes. Design heat loads are described. Electrode fabrication is discussed, and the cryopumps used are described

Vacuum pumping for controlled thermonuclear reactors

International Nuclear Information System (INIS)

Watson, J.S.; Fisher, P.W.

1976-01-01

Thermonuclear reactors impose unique vacuum pumping problems involving very high pumping speeds, handling of hazardous materials (tritium), extreme cleanliness requirements, and quantitative recovery of pumped materials. Two principal pumping systems are required for a fusion reactor, a main vacuum system for evacuating the torus and a vacuum system for removing unaccelerated deuterium from neutral beam injectors. The first system must pump hydrogen isotopes and helium while the neutral beam system can operate by pumping only hydrogen isotopes (perhaps only deuterium). The most promising pumping techniques for both systems appear to be cryopumps, but different cryopumping techniques can be considered for each system. The main vacuum system will have to include cryosorption pumps cooled to 4.2 0 K to pump helium, but the unburned deuterium-tritium and other impurities could be pumped with cryocondensation panels (4.2 0 K) or cryosorption panels at higher temperatures. Since pumping speeds will be limited by conductance through the ducts and thermal shields, the pumping performance for both systems will be similar, and other factors such as refrigeration costs are likely to determine the choice. The vacuum pumping system for neutral beam injectors probably will not need to pump helium, and either condensation or higher temperature sorption pumps can be used

Towards Electrically Pumped Nanolasers for Terabit Communication

DEFF Research Database (Denmark)

Lupi, Alexandra

This thesis deals with modeling, design, fabrication and characterization of vertically electrically pumped photonic crystal light-emitting devices. For this purpose a new material platform of III-V semiconductors on silicon has been developed. The devices fabricated on this platform can be used...... as optical interconnects, where compatibility with Complementary Metal Oxide Semiconductor (CMOS) technology is required. The first part of this work is dedicated to modeling and simulations of electrically pumped photonic crystal nanolasers with diverse material configurations and different concepts...... for electrical injection. The analysis of the models is conducted with focus on laser performances, energy efficiency, and thermal properties. The second part of this thesis deals with design, fabrication and characterization of vertically electrically pumped photonic crystal light-emitting devices. The devices...

Semiconductor devices as track detectors in high energy colliding beam experiments

International Nuclear Information System (INIS)

Ludlam, T.

1980-01-01

In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems

Semiconductor devices as track detectors in high energy colliding beam experiments

Energy Technology Data Exchange (ETDEWEB)

Ludlam, T

1980-01-01

In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems.

Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

Science.gov (United States)

Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

2013-11-18

Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

DEFF Research Database (Denmark)

Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao

2013-01-01

material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled......Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain......-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different...

On one peculiarity of the model describing the interaction of the electron beam with the semiconductor surface

Science.gov (United States)

Stepovich, M. A.; Amrastanov, A. N.; Seregina, E. V.; Filippov, M. N.

2018-01-01

The problem of heat distribution in semiconductor materials irradiated with sharply focused electron beams in the absence of heat exchange between the target and the external medium is considered by mathematical modeling methods. For a quantitative description of energy losses by probe electrons a model based on a separate description of the contributions of absorbed in the target and backscattered electrons and applicable to a wide class of solids and a range of primary electron energies is used. Using the features of this approach, the nonmonotonic dependence of the temperature of the maximum heating in the target on the energy of the primary electrons is explained. Some modeling results are illustrated for semiconductor materials of electronic engineering.

Simulations of longitudinally pumped dye laser amplifier

International Nuclear Information System (INIS)

Takehisa, Kiwamu; Takemori, Satoshi

1995-01-01

Simulations of a copper laser pumped dye laser amplifier and new designs of the longitudinally pumped dye laser amplifier are presented. The simulations take the consideration of the amplified spontaneous emission (ASE). The new designs utilize a center-hole reflector instead of a dichroic mirror. The simulation results indicate that the poor spatial overlap between the pump beam and the dye beam in the transverse pumping not only reduces the laser output power, but also generates ASE strongly. The results also indicate that the longitudinal pumping is as efficient as the transverse pumping. (author)

Self ordering threshold and superradiant backscattering to slow a fast gas beam in a ring cavity with counter propagating pump.

Science.gov (United States)

Maes, C; Asbóth, J K; Ritsch, H

2007-05-14

We study the dynamics of a fast gaseous beam in a high Q ring cavity counter propagating a strong pump laser with large detuning from any particle optical resonance. As spontaneous emission is strongly suppressed the particles can be treated as polarizable point masses forming a dynamic moving mirror. Above a threshold intensity the particles exhibit spatial periodic ordering enhancing collective coherent backscattering which decelerates the beam. Based on a linear stability analysis in their accelerated rest frame we derive analytic bounds for the intensity threshold of this selforganization as a function of particle number, average velocity, kinetic temperature, pump detuning and resonator linewidth. The analytical results agree well with time dependent simulations of the N-particle motion including field damping and spontaneous emission noise. Our results give conditions which may be easily evaluated for stopping and cooling a fast molecular beam.

Semiconductor Photonic Components for RF Applications

National Research Council Canada - National Science Library

Yu, Paul

2001-01-01

... delay beam formation and beam steering subsystems in phased array antennas. Device and material approaches were investigated to improve the modulator based on semiconductor structures for achieving high spur free dynamic range (SFDR...

Electrically Pumped Vertical-Cavity Amplifiers

DEFF Research Database (Denmark)

Greibe, Tine

2007-01-01

In this work, the design of electrically pumped vertical cavity semiconductor optical amplifiers (eVCAs) for use in a mode-locked external-cavity laser has been developed, investigated and analysed. Four different eVCAs, one top-emitting and three bottom emitting structures, have been designed...... and discussed. The thesis concludes with recommendations for further work towards the realisation of compact electrically pumped mode-locked vertical externalcavity surface emitting lasers....

Finite Element Analysis of Walking Beam of a New Compound Adjustment Balance Pumping Unit

Science.gov (United States)

Wu, Jufei; Wang, Qian; Han, Yunfei

2017-12-01

In this paper, taking the designer of the new compound balance pumping unit beam as our research target, the three-dimensional model is established by Solid Works, the load and the constraint are determined. ANSYS Workbench is used to analyze the tail and the whole of the beam, the stress and deformation are obtained to meet the strength requirements. The finite element simulation and theoretical calculation of the moment of the center axis beam are carried out. The finite element simulation results are compared with the calculated results of the theoretical mechanics model to verify the correctness of the theoretical calculation. Finally, the finite element analysis is consistent with the theoretical calculation results. The theoretical calculation results are preferable, and the bending moment value provides the theoretical reference for the follow-up optimization and research design.

Intelligent Balanced Device and its Sensing System for Beam Pumping Units

Directory of Open Access Journals (Sweden)

Hangxin WEI

2014-11-01

Full Text Available In order to save the energy of the beam pumping unit, the intelligent balanced device was developed. The device can adjust the position of the balanced-block automatically by the single chip microcomputer controller, and the fuzzy PD control algorithm was used to control the servo motor of the device. Since some signals should be inputted into the intelligent balanced device to calculate the balanced index of the pumping unit, the signals sensing system were designed. The sensing system includes the electric current sensor and voltage sensor of the main motor, the displacement sensor and the force sensor of the horse head. The sensing network has three layers: slave station, relay station and master station. The data transmission between them is based on ZigBee and GPRS method which can adapt the environment of the oil field. The results of application show that the intelligent balanced device and its sensing system can have the effect of reducing the power consumption, working reliability and communication efficiently.

Compensation of nonlinearity in a fiber-optic transmission system using frequency-degenerate phase conjugation through counter-propagating dual pump FWM in a semiconductor optical amplifier

Science.gov (United States)

Anchal, Abhishek; K, Pradeep Kumar; O'Duill, Sean; Anandarajah, Prince M.; Landais, Pascal

2018-04-01

We present a scheme of frequency-degenerate mid-span spectral inversion (MSSI) for nonlinearity compensation in fiber-optic transmission systems. The spectral inversion is obtained by using counter-propagating dual pump four-wave mixing in a semiconductor optical amplifier (SOA). Frequency-degeneracy between signal and conjugate is achieved by keeping two pump frequencies symmetrical about the signal frequency. We simulate the performance of MSSI for nonlinearity compensation by scrutinizing the improvement of the Q-factor of a 200 Gbps QPSK signal transmitted over a standard single mode fiber, as a function of launch power for different span lengths and number of spans. We demonstrate a 7.5 dB improvement in the input power dynamic range and an almost 83% increase in the transmission length for optimum MSSI parameters of -2 dBm pump power and 400 mA SOA current.

Semiconductor Photonic Components for RF Applications

National Research Council Canada - National Science Library

Yu, Paul

2002-01-01

... time delay beam formation and beam steering subsystem in phased array antennas. Device and material approaches were investigated to improve the modulator based on semiconductor structures for achieving high spur free dynamic range (SFDR...

Diode-laser-pump module with integrated signal ports for pumping amplifying fibers and method

Science.gov (United States)

Savage-Leuchs,; Matthias, P [Woodinville, WA

2009-05-26

Apparatus and method for collimating pump light of a first wavelength from laser diode(s) into a collimated beam within an enclosure having first and second optical ports, directing pump light from the collimated beam to the first port; and directing signal light inside the enclosure between the first and second port. The signal and pump wavelengths are different. The enclosure provides a pump block having a first port that emits pump light to a gain fiber outside the enclosure and that also passes signal light either into or out of the enclosure, and another port that passes signal light either out of or into the enclosure. Some embodiments use a dichroic mirror to direct pump light to the first port and direct signal light between the first and second ports. Some embodiments include a wavelength-conversion device to change the wavelength of at least some of the signal light.

Cryogenic semiconductor high-intensity radiation monitors

International Nuclear Information System (INIS)

Palmieri, V.G.; Bell, W.H.; Borer, K.; Casagrande, L.; Da Via, C.; Devine, S.R.H.; Dezillie, B.; Esposito, A.; Granata, V.; Hauler, F.; Jungermann, L.; Li, Z.; Lourenco, C.; Niinikoski, T.O.; Shea, V. O'; Ruggiero, G.; Sonderegger, P.

2003-01-01

This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux

Analysis of the pump-beam path in corner-pumped slab laser

International Nuclear Information System (INIS)

Chen Li; Qiang Liu; Mali Gong; Gang Chen; Ping Yan

2007-01-01

The propagation of the pump radiation in active slab elements is considered. Conditions of the total internal reflection of the pump radiation are obtained, and are used to construct a series of graphical illustrations of reflection characteristics of different active elements. (control of laser radiation parameters)

Pumping experiment of water on B and LaB6 films with electron beam evaporator

International Nuclear Information System (INIS)

Mori, Takahiro; Hanaoka, Yutaka; Akaishi, Kenya; Kubota, Yusuke; Motojima, Osamu; Mushiaki, Motoi; Funato, Yasuyuki.

1992-10-01

Pumping characteristics of water vapor on boron and lanthanum hexaboride films formed with an electron beam evaporator have been investigated in high vacuum of a pressure region between 10 -4 and 10 -3 Pa. Measured initial maximum pumping speeds of water for fresh B and LaB 6 films on substrates with a deposition amount from 2.3 x 10 21 to 6.7 x 10 21 molecules·m -2 are 3.2 ∼ 4.9 m 3 ·s -1 ·m -2 , and maximum saturation amounts of adsorbed water on these films are 2.9 x 10 20 ∼ 1.3 x 10 21 H 2 O molecules·m -2 . (author)

Thermally induced optical deformation of a Nd:YVO4 active disk under the action of multi-beam spatially periodic diode pumping

Science.gov (United States)

Guryev, D. A.; Nikolaev, D. A.; Tsvetkov, V. B.; Shcherbakov, I. A.

2018-05-01

A study of how the transverse distribution of an optical path changes in a Nd:YVO4 active disk was carried out in a ten-beam spatially periodic diode pumping in the one-dimensional case. The pumping beams’ transverse dimensions were comparable with the distances between them. The investigations were carried out using laser interferometry methods. It was found that the optical thickness changing in the active disk along the line of pumping spots was well described by a Gaussian function.

Method and system for homogenizing diode laser pump arrays

Science.gov (United States)

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Cryostat for an well logging probe using a semiconductor detector

International Nuclear Information System (INIS)

Tapphorn, R.M.

1978-01-01

This invention proposes to construct an well logging tool of the type comprising a semiconductor radiation detector devoid of the defects usually observed. This aim is attained by means of a cryostat to cool a semiconductor radiation detector in a restricted space where the temperature is high. It includes a long box dimensioned to pass through a bore hole, a cryogenic chamber housed in the box, a vacuum chamber thermally insulating the cryogenic chamber and placed around it, a semiconductor radiation detector housed in the vacuum chamber in thermal contact with the cryogenic chamber and an active vacuum pump fitted in the box and connected to the vacuum chamber to maintain a vacuum in it. In an improved version, the vacuum pump is fitted outside the cryostat so that it operates independently of the temperature conditions in the cryostat. If the pump needs to be cooled to reduce the gas discharge, it can be fitted inside the cryostat and connected to the cryogenic chamber or a second cryostat can also be provided to cool the pump. The vacuum pump is designed to maintain the vacuum in the thermal insulation vacuum chamber at a desired figure, preferably 10 -4 Torr or under, in order to preserve the integrity of the thermal insulation layer around the cryogenic chamber and thereby extending the efficient operating period of the detector. The cryogenic material used is preferably of fusion resistant type such as Freon 22 [fr

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

Science.gov (United States)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

Semiconductor plasmonic crystals: active control of THz extinction

International Nuclear Information System (INIS)

Schaafsma, M C; Rivas, J Gómez

2013-01-01

We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)

Generation of nanosecond laser pulses at a 2.2-MHz repetition rate by a cw diode-pumped passively Q-switched Nd3+:YVO4 laser

International Nuclear Information System (INIS)

Nghia, Nguyen T; Hao, Nguyen V; Orlovich, Valentin A; Hung, Nguyen D

2011-01-01

We report a new configuration of a high-repetition rate nanosecond laser based on a semiconductor saturable absorber mirror (SESAM). The SESAM is conventional technical solution for passive mode-locking at 1064 nm and simultaneously used as a highly reflecting mirror and a saturable absorber in a high-Q and short cavity of a cw diode-end-pumped a-cut Nd 3+ :YVO 4 laser. Two laser beams are coupled out from the cavity using an intracavity low-reflection thin splitter. The laser characteristics are investigated as functions of pump and resonator parameters. Using a 1.8-W cw pump laser diode at 808 nm, the passively Q-switched SESAMbased laser generates 22-ns pulses with an average power of 275 mW at a pulse repetition rate of 2250 kHz.

Optical beam transport to a remote location for low jitter pump-probe experiments with a free electron laser

Directory of Open Access Journals (Sweden)

P. Cinquegrana

2014-04-01

Full Text Available In this paper we propose a scheme that allows a strong reduction of the timing jitter between the pulses of a free electron laser (FEL and external laser pulses delivered simultaneously at the FEL experimental stations for pump-probe–type experiments. The technique, applicable to all seeding-based FEL schemes, relies on the free-space optical transport of a portion of the seed laser pulse from its optical table to the experimental stations. The results presented here demonstrate that a carefully designed laser beam transport, incorporating also a transverse beam position stabilization, allows one to keep the timing fluctuations, added by as much as 150 m of free space propagation and a number of beam folding mirrors, to less than 4 femtoseconds rms. By its nature our scheme removes the major common timing jitter sources, so the overall jitter in pump-probe measurements done in this way will be below 10 fs (with a margin to be lowered to below 5 fs, much better than the best results reported previously in the literature amounting to 33 fs rms.

Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

Science.gov (United States)

Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

2018-01-01

We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

Trial design and manufacture of double spiral grooved vacuum pump; Double neji mizoshiki shinku pump no shisaku

Energy Technology Data Exchange (ETDEWEB)

Iguchi, M.; Sawada, T.; Sugiyama, W. [Akita University, Akita (Japan). Faculty of Mining; Watanabe, M.

1997-04-25

A spiral grooved vacuum pump and a compound molecular pump (the combination of a spiral grooved pump and a turbomolecular pump) are widely used in the thin-film industry for processes such as semiconductor production. Pumping performance is high at pressures below 1 000 Pa and low at pressures above 1000 Pa when the clearance between rotor and stator is on the order of 0.1 mm, which is the practical value for industrial use. The double spiral grooved vacuum pump is thought to have better pumping performance at such high pressures than the conventional spiral grooved vacuum pump. The aim of this study is to investigate the feasibility of use of the double spiral grooved vacuum pump at pressures above 1000 Pa. A double spiral grooved vacuum pump with a rotor of 150 mm diameter and 190 mm length has been designed and manufactured. Its pumping performance has been tested by experiments. The test results show the improvement in the performance at pressures above 1000 Pa compared to the conventional spiral grooved vacuum pump. 2 refs., 12 figs., 2 tabs.

Solid state radiative heat pump

Science.gov (United States)

Berdahl, P.H.

1984-09-28

A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

High-performance semiconductor optical preamplifier receiver at 10 Gb/s

DEFF Research Database (Denmark)

Mikkelsen, Benny; Jørgensen, Carsten Gudmann; Jensen, N.

1993-01-01

A semiconductor optical preamplifier receiver for bitrates of 10 Gb/s is described. The measured sensitivity is -28 dBm, with a polarization sensitivity of less than 0.5 dB. Using the same transmitter and receiver configuration but with a 980-nm pumped fiber amplifier instead of the semiconductor...... amplifier, the sensitivity is -34 dBm...

Some aspects of ion implantation in semiconductors

International Nuclear Information System (INIS)

Klose, H.

1982-01-01

The advantages and disadvantages of ion implantation in the application of semiconductor technology are reviewed in short. This article describes some aspects of the state of the art and current developments of nonconventional annealing procedures, ion beam gettering of deep impurities, special applications of ion implantation using low or high energy ions and GaAs-electronics, respectively. Radiation defects in Si and the nonexponential emission and capture processes in GaAsP are discussed. Final future trends of ion beam methods in semiconductor production technology are summarized. (author)

Amplification of UV ultrashort pulse laser in e-beam pumped KrF amplifier

CERN Document Server

Tang Xiu Zhang; Gong Kun; Ma Wei Yi; Shan Yu Sheng; Wang Nai Yan

2002-01-01

Experimental investigations were performed for amplification of ultrashort pulse laser with Heaven-I e-beam pumped KrF amplifier in CIAE. A 50 mJ, 420 fs UV ultrashort pulse was amplified to 2-3 J energy, 1.2 ps pulse duration, and 2TW laser power. Experimental technique such as synchronization were describe, some parameters such as nonlinear absorb coefficient were measured in experiment. As a result, it is possible to achieve ultra-strong UV laser with intensity higher than 10 sup 1 sup 9 W/cm sup 2 in recently years

On-the-Fly Control of High-Harmonic Generation Using a Structured Pump Beam

Science.gov (United States)

Hareli, Liran; Lobachinsky, Lilya; Shoulga, Georgiy; Eliezer, Yaniv; Michaeli, Linor; Bahabad, Alon

2018-05-01

We demonstrate experimentally a relatively simple yet powerful all-optical enhancement and control technique for high harmonic generation. This is achieved by using as a pump beam two different spatial optical modes interfering together to realize tunable periodic quasi-phase matching of the interaction. With this technique, we demonstrate on-the-fly quasi-phase matching of harmonic orders 29-41 at ambient gas pressure levels of 50 and 100 Torr, where an up to 100-fold enhancement of the emission is observed. The technique is scalable to different harmonic orders and ambient pressure conditions.

Amplification of UV ultrashort pulse laser in e-beam pumped KrF amplifier

International Nuclear Information System (INIS)

Tang Xiuzhang; Zhang Haifeng; Gong Kun; Ma Weiyi; Shan Yusheng; Wang Naiyan

2002-01-01

Experimental investigations were performed for amplification of ultrashort pulse laser with Heaven-I e-beam pumped KrF amplifier in CIAE. A 50 mJ, 420 fs UV ultrashort pulse was amplified to 2-3 J energy, 1.2 ps pulse duration, and 2TW laser power. Experimental technique such as synchronization were describe, some parameters such as nonlinear absorb coefficient were measured in experiment. As a result, it is possible to achieve ultra-strong UV laser with intensity higher than 10 19 W/cm 2 in recently years

A semiconductor metasurface with multiple functionalities: A polarizing beam splitter with simultaneous focusing ability

Energy Technology Data Exchange (ETDEWEB)

Lee, Jun Hyung; Jin Jung, Myoung; Ho Song, Seok, E-mail: shsong@hanyang.ac.kr [Department of Physics, Hanyang University, Seoul (Korea, Republic of); Woong Yoon, Jae; Magnusson, Robert [Department of Electrical Engineering, University of Texas–Arlington, Arlington, Texas 76019 (United States); Kyun Hong, Jong [Department of Electrical Engineering, Hanyang University, Seoul (Korea, Republic of)

2014-06-09

We propose a semiconductor metasurface that simultaneously performs two independent functions: focusing and polarization filtering. The wavefronts of the reflected and transmitted light distributions are precisely manipulated by spatial parametric variation of a subwavelength thin-film Si grating, which inherently possesses polarization filtering properties. We design a 12-μm-wide metasurface containing only nineteen Si grating ridges. Under a 10-μm-wide unpolarized Gaussian beam incidence at wavelength of 1.55 μm, the resulting device shows promising theoretical performance with high power efficiency exceeding 80% and polarization extinction ratio of ∼10 dB with focal spot diameters near 1–2 μm.

Measurement of the electron quenching rate in an electron beam pumped KrF* laser

International Nuclear Information System (INIS)

Nishioka, Hajime; Kurashima, Toshio; Kuranishi, Hideaki; Ueda, Kenichi; Takuma, Hiroshi; Sasaki, Akira; Kasuya, Koichi.

1988-01-01

The electron quenching rate of KrF * in an electron beam pumped laser has been studied by accurately measuring the saturation intensity in a mixture of Ar/Kr/F 2 = 94/6/0.284. The input intensity of the measurements was widely varied from 100 W cm -2 (small signal region) to 100 MW cm -2 (absorption dominant region) in order to separate laser parameters which are small signal gain coefficient, absorption coefficient, and saturation intensity from the measured net gain coefficients. The gas pressure and the pump rate were varied in the range of 0.5 to 2.5 atm and 0.3 to 1.4 MW cm -3 , respectively. The electron quenching rate constant of 4.5 x 10 -7 cm 3 s -1 was obtained from the pressure and the pump rate dependence of the KrF * saturation intensity with the temperature dependence of the rate gas 3-body quenching rate as a function of gas temperature to the -3rd power. The small signal gain coefficients calculated with the determined quenching rate constants shows excellent agreement with the measurements. (author)

An optimized design of rectangle pumping cell for nuclear reactor pumped laser

International Nuclear Information System (INIS)

Wan, J.-S.; Chen, L.-X.; Zhao, Z.-M.; Pan, X.-B.; Jing, C.-Y.; Zhao, X.-Q.; Liu, F.-H.

2003-01-01

Basing on our research of energy deposition in RPL (Reactor Pumped Laser) pumping cell and the laser power efficiency, a RPL test device on Pulsed Reactor has been designed. In addition, the laser beam power of the RPL test device is estimated in the paper. (author)

Structures and electronics of buried and unburied semiconductor interfaces

International Nuclear Information System (INIS)

Kamiya, Itaru

2011-01-01

The structure of interfaces plays an important role in determining the electronic properties of semiconductor nanostructures. Here, such examples are shown and discussed using semiconductor nanostructures prepared by molecular beam epitaxy and colloidal synthesis.

Applications of nuclear microprobes in the semiconductor industry

International Nuclear Information System (INIS)

Takai, M.

1996-01-01

Possible nuclear microprobe applications in semiconductor industries are discussed. A unique technique using soft-error mapping and ion beam induced current measurements for reliability testing of dynamic random access memories such as soft-error immunity and noise carrier suppression has been developed for obtaining design parameters of future memory devices. Nano-probes and small installation areas are required for the use of microprobes in the semiconductor industry. Issues arising from microprobe applications such as damage induced by the probe beam are clarified. (orig.)

Repetitive 1 Hz fast-heating fusion driver HAMA pumped by diode pumped solid state laser

International Nuclear Information System (INIS)

Mori, Yoshitaka; Sekine, Takashi; Komeda, Osamu

2014-01-01

We describe a repetitive fast-heating fusion driver called HAMA pumped by Diode Pumped Solid State Laser (DPSSL) to realize the counter irradiation of sequential implosion and heating laser beams. HAMA was designed to activate DPSSL for inertial confinement fusion (ICF) research and to realize a unified ICF machine for power plants. The details of a four-beam alignment scheme and the results of the counter irradiation of stainless plates are shown. (author)

Progress towards a semiconductor Compton camera for prompt gamma imaging during proton beam therapy for range and dose verification

Science.gov (United States)

Gutierrez, A.; Baker, C.; Boston, H.; Chung, S.; Judson, D. S.; Kacperek, A.; Le Crom, B.; Moss, R.; Royle, G.; Speller, R.; Boston, A. J.

2018-01-01

The main objective of this work is to test a new semiconductor Compton camera for prompt gamma imaging. Our device is composed of three active layers: a Si(Li) detector as a scatterer and two high purity Germanium detectors as absorbers of high-energy gamma rays. We performed Monte Carlo simulations using the Geant4 toolkit to characterise the expected gamma field during proton beam therapy and have made experimental measurements of the gamma spectrum with a 60 MeV passive scattering beam irradiating a phantom. In this proceeding, we describe the status of the Compton camera and present the first preliminary measurements with radioactive sources and their corresponding reconstructed images.

Radio Pumping of Ionospheric Plasma with Orbital Angular Momentum

International Nuclear Information System (INIS)

Leyser, T. B.; Norin, L.; McCarrick, M.; Pedersen, T. R.; Gustavsson, B.

2009-01-01

Experimental results are presented of pumping ionospheric plasma with a radio wave carrying orbital angular momentum (OAM), using the High Frequency Active Auroral Research Program (HAARP) facility in Alaska. Optical emissions from the pumped plasma turbulence exhibit the characteristic ring-shaped morphology when the pump beam carries OAM. Features of stimulated electromagnetic emissions (SEE) that are attributed to cascading Langmuir turbulence are well developed for a regular beam but are significantly weaker for a ring-shaped OAM beam in which case upper hybrid turbulence dominates the SEE

High mobility emissive organic semiconductor

Science.gov (United States)

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Theory of semiconductor laser cooling

Science.gov (United States)

Rupper, Greg

Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

Selective injection locking of a multi-mode semiconductor laser to a multi-frequency reference beam

Science.gov (United States)

Pramod, Mysore Srinivas; Yang, Tao; Pandey, Kanhaiya; Giudici, Massimo; Wilkowski, David

2014-07-01

Injection locking is a well known and commonly used method for coherent light amplification. Usually injection locking is obtained on a single-mode laser injected by a single-frequency seeding beam. In this work we show that selective injection locking of a single-frequency may also be achieved on a multi-mode semiconductor laser injected by a multi-frequency seeding beam, if the slave laser provides sufficient frequency filtering. This selective injection locking condition depends critically on the frequency detuning between the free-running slave emission frequency and each injected frequency component. Stable selective injection locking to a set of three seeding components separated by 1.2 GHz is obtained. This system provides an amplification up to 37 dB of each component. This result suggests that, using distinct slave lasers for each frequency line, a set of mutually coherent high-power radiation modes can be tuned in the GHz frequency domain.

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Djara, V.; Cherkaoui, K.; Negara, M. A.; Hurley, P. K., E-mail: paul.hurley@tyndall.ie [Tyndall National Institute, University College Cork, Dyke Parade, Cork (Ireland)

2015-11-28

An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N{sub inv}) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I{sub d}-V{sub g} measurements enabled an accurate effective mobility vs N{sub inv} extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs.

Ultrafast supercontinuum fiber-laser based pump-probe scanning magneto-optical Kerr effect microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution.

Science.gov (United States)

Henn, T; Kiessling, T; Ossau, W; Molenkamp, L W; Biermann, K; Santos, P V

2013-12-01

We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast "white light" supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

Solid-state NMR of inorganic semiconductors.

Science.gov (United States)

Yesinowski, James P

2012-01-01

Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

Polariton solitons and nonlinear localized states in a one-dimensional semiconductor microcavity

Science.gov (United States)

Chen, Ting-Wei; Cheng, Szu-Cheng

2018-01-01

This paper presents numerical studies of cavity polariton solitons (CPSs) in a resonantly pumped semiconductor microcavity with an imbedded spatial defect. In the bistable regime of the well-known homogeneous polariton condensate, with proper incident wave vector and pump strength, bright and/or dark cavity solitons can be found in the presence of a spatially confined potential. The minimum pump strength required to observe the CPSs or nonlinear localized states in this parametric pump scheme is therefore reported.

Electronic structure of semiconductor interfaces

Energy Technology Data Exchange (ETDEWEB)

Herman, F

1983-02-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

Electronic structure of semiconductor interfaces

International Nuclear Information System (INIS)

Herman, F.

1983-01-01

The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

Analysis of lifting beam and redesigned lifting lugs for 241-AZ-01A decant pump

International Nuclear Information System (INIS)

Coverdell, B.L.

1994-01-01

This supporting document details calculations for the proper design of a lifting beam and redesigned lifting lugs for the 241AZO1A decant pump. This design is in accordance with Standard Architectural-Civil Design Criteria, Design Loads for Facilities (DOE-RL 1989) and is safety class three. The design and fabrication is in accordance with American Institute of Steel Construction, Manual of Steel Construction, (AISC, 1989) and the Hanford Hoisting and Rigging Manual (DOE-RL 1993)

Semiconductor analysis with a channeled helium microbeam

International Nuclear Information System (INIS)

Ingarfield, S.A.; McKenzie, C.D.; Short, K.T.; Williams, J.S.

1981-01-01

This paper describes the use of a channeled helium microbeam for analysis of damage and dopant distributions in semiconductors. Practical difficulties and potential problems associated with the channeling of microbeams in semiconductors have been examined. In particular, the following factors have been characterised: i) the effect of both convergence of focused beam and beam scanning on the quality of channeling; ii) damage produced by the probe ions; and iii) local beam heating effects arising from high current densities. Acceptable channeling has been obtained (minimum yield approaching 4%) under a variety of focusing and scanning conditions which are suitable for analysis of device structures. The capabilities of the technique are demonstrated by monitoring variations in local damage and impurity depth distributions across a narrow (<2mm) region of an ion implanted silicon wafer

New concepts for drift pumping a thermal barrier with rf

International Nuclear Information System (INIS)

Barter, J.D.; Baldwin, D.; Chen, Y.; Poulsen, P.

1985-01-01

Pump neutral beams, which are directed into the loss cone of the TMX-U plugs, are normally used to pump ions from the thermal barriers. Because these neutral beams introduce cold gas that reduces pumping efficiency, and require a straight line entrance and exit from the plug, alternate methods are being investigated to provide barrier pumping. To maintain the thermal barrier, either of two classes of particles can be pumped. First, the collisionally trapped ions can be pumped directly. In this case, the most promising selection criterion is the azimuthal drift frequency. Second, the excess sloshing-ion density can be removed, allowing the use of increased sloshing-beam density to pump the trapped ions. The selection mechanism in this case is the Doppler-shifted ion-cyclotron resonance of the high-energy sloshing-ions (3 keV less than or equal to U/sub parallel/ less than or equal to 10 keV)

Measurement of the electron quenching rate in an electron beam pumped KrF/sup */ laser

Energy Technology Data Exchange (ETDEWEB)

Nishioka, Hajime; Kurashima, Toshio; Kuranishi, Hideaki; Ueda, Kenichi; Takuma, Hiroshi; Sasaki, Akira; Kasuya, Koichi.

1988-09-01

The electron quenching rate of KrF/sup */ in an electron beam pumped laser has been studied by accurately measuring the saturation intensity in a mixture of Ar/Kr/F/sub 2/ = 94/6/0.284. The input intensity of the measurements was widely varied from 100 W cm/sup -2/ (small signal region) to 100 MW cm/sup -2/ (absorption dominant region) in order to separate laser parameters which are small signal gain coefficient, absorption coefficient, and saturation intensity from the measured net gain coefficients. The gas pressure and the pump rate were varied in the range of 0.5 to 2.5 atm and 0.3 to 1.4 MW cm/sup -3/, respectively. The electron quenching rate constant of 4.5 x 10/sup -7/ cm/sup 3/s/sup -1/ was obtained from the pressure and the pump rate dependence of the KrF/sup */ saturation intensity with the temperature dependence of the rate gas 3-body quenching rate as a function of gas temperature to the -3rd power. The small signal gain coefficients calculated with the determined quenching rate constants shows excellent agreement with the measurements.

Development of the power control system for semiconductor lasers

International Nuclear Information System (INIS)

Kim, Kwang Suk; Kim, Cheol Jung

1997-12-01

For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs

Ion-atom charge-transfer system for a heavy-ion-beam pumped laser

International Nuclear Information System (INIS)

Ulrich, A.; Gernhaeuser, R.; Kroetz, W.; Wieser, J.; Murnick, D.E.

1994-01-01

An Ar target to which Cs vapor could be added, excited by a pulsed beam of 100-MeV 32 S ions, was studied as a prototype ion-atom charge-transfer system for pumping short-wavelength lasers. Low-velocity Ar 2+ ions were efficiently produced; a huge increase in the intensity of the Ar II 4d-4p spectral lines was observed when Cs vapor was added to the argon. This observation is explained by a selective charge transfer of the Cs 6s electron into the upper levels of the observed transitions. A rate constant of (1.4±0.2)x10 -9 cm 3 /s for the transfer process was determined

A study on the optical parts for a semiconductor laser module

Energy Technology Data Exchange (ETDEWEB)

Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik [Korea Photonics Technology Institute, Gwangju (Korea, Republic of); Jang, Kwang-Ho [Hanvit Optoline, Gwangju (Korea, Republic of); Kang, Seung-Goo [COSET, Gwangju (Korea, Republic of)

2014-11-15

A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

Electron-beam pumping of visible and ultraviolet gas lasers

International Nuclear Information System (INIS)

Bradley, L.P.

1975-01-01

Several techniques for using direct electron-pumping of gas lasers are reviewed. The primary objective is to categorize pump geometries and to give guidelines for gun selection and pulser design. Examples and application of pump technology are given

COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

DEFF Research Database (Denmark)

2009-01-01

The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...... for generation of a detector signal by mixing of the reference beam with light emitted from the particles in the measurement volume illuminated by the measurement beam, and a signal processor for generating a velocity signal corresponding to the velocity of the particles based on the detector signal....

Nonlinear Refractive Index Measurement in Semiconductor-Doped Glasses

Directory of Open Access Journals (Sweden)

M. t. Tavassoli

1997-04-01

Full Text Available   There are several techniques in use for non-linear refractive index measurement, namely, interferometric techniques, in which conventional inter-ferometers are used, degenerate for wave mixing (DFWM, and z-scan, Each of these techniques suffers from some shortcmings. For example conventional interferometers like Fabry-Perot and Twyman-Green need high quality optical components, unwanted reflections on these components produce noise, and the device limits the probe-pump anglc, or in z-scan technique one needs very sensitive detectors and since the intensity is monitored by the nonlinear absorption, which is usually present, reduces the measurement accuracy.   In the techniqucs introduced here, in principle, only a plate of the sample is required, and even parallelism of the plate surfaces is not curcial. Experiments can be carried out successfully if the angle between the plate surface is less than few minutes. In the first technique, the probe beam strikes the surface at an arbitray angle of incidence. The reflected beam from the two surfaces of the sample interfere on a photo-sensitive screen like CCD, and more or less linear interference fringes are produced. When the pump beam is switched on, the interference pattern deforms. The amount and the direction of the deformation give the value and the sign of the non-linear refractive index. In this technique the probe-pump angle can be varied from 00 to 1900.  In the second technique, interference between the reflected probe beam from the sample and the diffracted pump beam from the grating induced by the interference of the probe and the pump beams, leads to a series of circular fringes. When the non-linear sample is replaced by a linear material like fuse silica glass, the above mentioned circular fringes are formed, but the number of fringes in a specified angular interval remains fixed as the pump beam intensity increases. But, in the case of a non-linear sample the number changes due to

A measurement of the absolute neutron beam polarization produced by an optically pumped 3He neutron spin filter

International Nuclear Information System (INIS)

Rich, D.R.; Bowman, J.D.; Crawford, B.E.; Delheij, P.P.J.; Espy, M.A.; Haseyama, T.; Jones, G.; Keith, C.D.; Knudson, J.; Leuschner, M.B.; Masaike, A.; Masuda, Y.; Matsuda, Y.; Penttilae, S.I.; Pomeroy, V.R.; Smith, D.A.; Snow, W.M.; Szymanski, J.J.; Stephenson, S.L.; Thompson, A.K.; Yuan, V.

2002-01-01

The capability of performing accurate absolute measurements of neutron beam polarization opens a number of exciting opportunities in fundamental neutron physics and in neutron scattering. At the LANSCE pulsed neutron source we have measured the neutron beam polarization with an absolute accuracy of 0.3% in the neutron energy range from 40 meV to 10 eV using an optically pumped polarized 3 He spin filter and a relative transmission measurement technique. 3 He was polarized using the Rb spin-exchange method. We describe the measurement technique, present our results, and discuss some of the systematic effects associated with the method

Particularities of optical pumping effects in cold and ultra-slow beams of Na and Cs in the case of cyclic transitions

KAUST Repository

Bruvelis, M.; Cinins, A.; Leitis, A.; Efimov, D. K.; Bezuglov, N. N.; Chirtsov, A. S.; Fuso, F.; Ekers, Aigars

2015-01-01

The time-dependent population dynamics of hyperfine (HF) levels of n2p3/2 states is examined for cyclic transitions in alkali atoms. We study a slow and cold atomic beam of Na (n = 3) and Cs (n = 6), taking into account the long interaction time of light with atoms (~200 μs) inside the resonant laser beam. Simple analytical expressions for the populations of the excited states and for the intensities of the absorption lines are derived for a three-level system model. We show that at moderate pump laser power the mixing of HF levels is sufficient to form a flow of population from a cyclic transition to partially open transitions. We discuss various phenomena associated with the evolution of optical pumping that cannot be explained by general analysis of two-level system model.

Particularities of optical pumping effects in cold and ultra-slow beams of Na and Cs in the case of cyclic transitions

KAUST Repository

Bruvelis, M.

2015-12-09

The time-dependent population dynamics of hyperfine (HF) levels of n2p3/2 states is examined for cyclic transitions in alkali atoms. We study a slow and cold atomic beam of Na (n = 3) and Cs (n = 6), taking into account the long interaction time of light with atoms (~200 μs) inside the resonant laser beam. Simple analytical expressions for the populations of the excited states and for the intensities of the absorption lines are derived for a three-level system model. We show that at moderate pump laser power the mixing of HF levels is sufficient to form a flow of population from a cyclic transition to partially open transitions. We discuss various phenomena associated with the evolution of optical pumping that cannot be explained by general analysis of two-level system model.

Semiconductors and semimetals epitaxial microstructures

CERN Document Server

Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

1994-01-01

Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

Conceptual design of a large E-beam-pumped KrF laser for ICF commercial applications

International Nuclear Information System (INIS)

Harris, D.B.; Waganer, L.M.; Zuckerman, D.S.; Bowers, D.A.

1986-01-01

Two types of KrF lasers appear attractive as a driver for an ICF electric power plant. The original concept uses large electron-beam-pumped amplifiers and pure angular multiplexing to deliver short, shaped pulses to the target. A recently conceived alternate concept uses many small, long-pulse e-beam sustained discharge lasers which transfer their energy through the forward Raman process to a multiplexed set of beams to deliver the energy to target. Preliminary comparisons of the two systems indicate that the original concept has both a lower cost and a lower system efficiency, and both concepts appear to be nearly equally attractive as an ICF driver for an electric power plant. This paper examines a 4.8 MJ, 5 Hz KrF laser system designed using the original concept. The laser uses 24 main amplifiers arranged in eight sets of three amplifiers each. This layout optimizes both the optical system and the gas flow system, and uses a simple target illumination scheme that provides neutron shielding to allow hands-on maintenance in the laser hall

Ion beam synthesis and characterization of metastable group-IV alloy semiconductors

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Naoto; Hasegawa, Masataka; Hayashi, Nobuyuki; Makita, Yunosuke; Shibata, Hajime [Electrotechnical Lab., Tsukuba, Ibaraki (Japan); Katsumata, Hiroshi; Uekusa, Shin-ichiro

1997-03-01

New Group-IV metastable alloy semiconductors and their heterostructures based on combinations of C-Si-Ge-Sn are recently attracting interest because of feasible new electronic and optoelectronic application in Si-technology and here research works on synthesis and characterization of the epitaxial heterostructures of Si-C, Si-Sn on Si fabricated by ion implantation together either with ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG) have been investigated. Formations of layers of Si{sub 1-y}C{sub y} (y=0.014 at peak concentration) on Si(100) have been performed by high-dose implantation of 17 keV C ions and successive IBIEC with 400 keV Ar or Ge ion bombardments at 300-400degC or SPEG up to 750degC. Crystalline growth by IBIEC has shown a lower growth rate in Si{sub 1-y}C{sub y}/Si than in intrinsic Si due mainly to the strain existence, which was observed by the X-ray diffraction (XRD) measurements. Photoluminescence(PL) measurements have revealed I{sub 1} or G line emissions that are relevant to small vacancy clusters or C pair formation, respectively. The crystalline growth of Si{sub 1-z}Sn{sub z} layers by 110 keV {sup 120}Sn ion implantation (z=0.029 and z=0.058 at peak concentration) into Si(100) followed either by IBIEC or by SPEG has been also investigated. PL emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I{sub 1} or I{sub 1}-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-C and Si-Sn alloy semiconductors. (J.P.N.)

Method of determining the position of an irradiated electron beam

International Nuclear Information System (INIS)

Fukuda, Wataru.

1967-01-01

The present invention relates to the method of determining the position of a radiated electron beam, in particular, the method of detecting the position of a p-n junction by a novel method when irradiating the electron beam on to the semi-conductor wafer, controlling the position of the electron beam from said junction. When the electron beam is irradiated on to the semi-conductor wafer which possesses the p-n junction, the position of the p-n junction may be ascertained to determine the position of the irradiated electron beam by detecting the electromotive force resulting from said p-n junction with a metal disposed in the proximity of but without mechanical contact with said semi-conductor wafer. Furthermore, as far as a semi-conductor wafer having at least one p-n junction is concerned, the present invention allows said p-n junction to be used to determine the position of an irradiated electron beam. Thus, according to the present invention, the electromotive force of the electron beam resulting from the p-n junction may easily be detected by electrostatic coupling, enabling the position of the irradiated electron beam to be accurately determined. (Masui, R.)

Semiconductor laser technology for remote sensing experiments

Science.gov (United States)

Katz, Joseph

1988-01-01

Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

Spin pumping in ion-beam sputtered C o2FeAl /Mo bilayers: Interfacial Gilbert damping

Science.gov (United States)

Husain, Sajid; Kumar, Ankit; Barwal, Vineet; Behera, Nilamani; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

2018-02-01

The spin-pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered C o2FeAl (CFA)/Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin-current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data have been analyzed using spin-pumping theory in terms of spin current pumped through the ferromagnet/nonmagnetic metal interface to deduce the real spin-mixing conductance and the spin-diffusion length, which are estimated to be 1.56 (±0.30 ) ×1019m-2 and 2.61 (±0.15 )nm , respectively. The damping constant is found to be 8.8 (±0.2 ) ×10-3 in the Mo(3.5 nm)-capped CFA(8 nm) sample corresponding to an ˜69 % enhancement of the original Gilbert damping 5.2 (±0.6 ) ×10-3 in the Al-capped CFA thin film. This is further confirmed by inserting the Cu dusting layer which reduces the spin transport across the CFA/Mo interface. The Mo layer thickness-dependent net spin-current density is found to lie in the range of 1 -4 MA m-2 , which also provides additional quantitative evidence of spin pumping in this bilayer thin-film system.

Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam

Science.gov (United States)

Uedono, A.; Wei, L.; Tanigawa, S.; Suzuki, R.; Ohgaki, H.; Mikado, T.; Ohji, Y.

1993-12-01

The positron annihilation in a metal-oxide semiconductor was studied by using a pulsed monoenergetic positron beam. Lifetime spectra of positrons were measured as a function of incident positron energy for a polycrystalline Si(100 nm)/SiO2(400 nm)/Si specimen. Applying a gate voltage between the polycrystalline Si film and the Si substrate, positrons implanted into the specimen were accumulated at the SiO2/Si interface. From the measurements, it was found that the annihilation probability of ortho-positronium (ortho-Ps) drastically decreased at the SiO2/Si interface. The observed inhibition of the Ps formation was attributed to an interaction between positrons and defects at the SiO2/Si interface.

Characteristics of a laser beam produced by using thermal lensing effect compensation in a fiber-coupled laser-diode-pumped Nd:YAG ceramic laser

International Nuclear Information System (INIS)

Kim, Duck-Lae; Kim, Byung-Tai

2010-01-01

The characteristics of a laser beam produced by using thermal lensing effect compensation in a fiber-coupled laser-diode Nd:YAG ceramic laser were investigated. The thermal lensing effect was compensated for by using a compensator, which was 25 mm away from the laser rod, with a focal length of 30 mm and an effective clear aperture of 22 mm. Using a compensator, the divergence and the beam propagation factor M 2 of the output beam were 5.5 mrad and 2.4, respectively, under a pump power of 12W. The high-frequency components in the compensated laser beam were removed.

Time-resolved terahertz spectroscopy of semiconductor nanostructures

DEFF Research Database (Denmark)

Porte, Henrik

This thesis describes time-resolved terahertz spectroscopy measurements on various semiconductor nanostructures. The aim is to study the carrier dynamics in these nanostructures on a picosecond timescale. In a typical experiment carriers are excited with a visible or near-infrared pulse and by me......This thesis describes time-resolved terahertz spectroscopy measurements on various semiconductor nanostructures. The aim is to study the carrier dynamics in these nanostructures on a picosecond timescale. In a typical experiment carriers are excited with a visible or near-infrared pulse...... and by measuring the transmission of a terahertz probe pulse, the photoconductivity of the excited sample can be obtained. By changing the relative arrival time at the sample between the pump and the probe pulse, the photoconductivity dynamics can be studied on a picosecond timescale. The rst studied semiconductor...

Three-beam double stimulated Raman scatterings: Cascading configuration

Science.gov (United States)

Rao, B. Jayachander; Cho, Minhaeng

2018-03-01

Two-beam stimulated Raman scattering (SRS) has been used in diverse label-free spectroscopy and imaging applications of live cells, biological tissues, and functional materials. Recently, we developed a theoretical framework for the three-beam double SRS processes that involve pump, Stokes, and depletion beams, where the pump-Stokes and pump-depletion SRS processes compete with each other. It was shown that the net Stokes gain signal can be suppressed by increasing the depletion beam intensity. The theoretical prediction has been experimentally confirmed recently. In the previous scheme for a selective suppression of one SRS by making it compete with another SRS, the two SRS processes occur in a parallel manner. However, there is another possibility of three-beam double SRS scheme that can be of use to suppress either Raman gain of the Stokes beam or Raman loss of the pump beam by depleting the Stokes photons with yet another SRS process induced by the pair of Stokes and another (second) Stokes beam. This three-beam double SRS process resembles a cascading energy transfer process from the pump beam to the first Stokes beam (SRS-1) and subsequently from the first Stokes beam to the second Stokes beam (SRS-2). Here, the two stimulated Raman gain-loss processes are associated with two different Raman-active vibrational modes of solute molecule. In the present theory, both the radiation and the molecules are treated quantum mechanically. We then show that the cascading-type three-beam double SRS can be described by coupled differential equations for the photon numbers of the pump and Stokes beams. From the approximate solutions as well as exact numerical calculation results for the coupled differential equations, a possibility of efficiently suppressing the stimulated Raman loss of the pump beam by increasing the second Stokes beam intensity is shown and discussed. To further prove a potential use of this scheme for developing a super-resolution SRS microscopy, we

Beat-wave generation of plasmons in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1995-08-01

It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductor (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas. (author). 7 refs

Performance demonstration of a single-frequency optically-pumped cesium beam frequency standard for space applications

Science.gov (United States)

Lecomte, S.; Haldimann, M.; Ruffieux, R.; Thomann, P.; Berthoud, P.

2017-11-01

Observatoire de Neuchâtel (ON) is developing a compact optically-pumped cesium beam frequency standard in the frame of an ESA-ARTES 5 project. The simplest optical scheme, which is based on a single optical frequency for both preparation and detection processes of atoms, has been chosen to fulfill reliability constraints of space applications. With our laboratory demonstrator operated at 852 nm (D2 line), we have measured a frequency stability of σy=2.74x10-12 τ -1/2, which is compliant with the Galileo requirement. The atomic resonator is fully compliant to be operated with a single diode laser at 894 nm (D1 line). Sensitivity measurements of the clock signal to the microwave power and to the optical pumping power are also presented. Present performance limitations are discussed and further improvements are proposed in order to reach our ultimate frequency stability goal of σy=1x10-12 τ -1/2. The clock driving software is also briefly described.

Pulse forming networks for fast pumping of high power electron-beam-controlled CO2 lasers

International Nuclear Information System (INIS)

Riepe, K.B.

1975-01-01

The transverse electric discharge is a widely used technique for pumping CO 2 lasers at high pressures for the generation, simply and efficiently, of very high power laser pulses. The development of the electron-beam-controlled discharge has allowed the application of the transverse discharge to large aperture, very high energy systems. LASL is now in the process of assembly and checkout of a CO 2 laser which is designed to generate a one nanosecond pulse containing 10 kilojoules, for use in laser fusion experiments. The front end of this laser consists of a set of preamplifiers and a mode locked oscillator with electro-optic single pulse switchout. The final amplifier stage consists of four parallel modules, each one consisting of a two-sided electron gun, and two 35 x 35 x 200 cm gas pumping regions operating at a pressure of 1800 torr with a 3/ 1 / 4 /1 (He/N 2 /CO 2 ) laser mix. (auth)

Nonlinear dynamics of semiconductors in strong THz electric fields

DEFF Research Database (Denmark)

Tarekegne, Abebe Tilahun

In this thesis, we investigate nonlinear interactions of an intense terahertz (THz) field with semiconductors, in particular the technologically relevant materials silicon and silicon carbide. We reveal the time-resolved dynamics of the nonlinear processes by pump-probe experiments that involve...

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Science.gov (United States)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Irradiation damage of SiC semiconductor device (I)

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10 16 N + ions/cm 2 and 3.6 x 10 17 e/cm 2 and 1.08 x 10 18 e/cm 2 , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix

Irradiation damage of SiC semiconductor device (I)

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju

2000-09-01

This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

MeV He microbeam analysis of a semiconductor integrated circuit

International Nuclear Information System (INIS)

Zhu Peiran; Liu Jiarui; Zhang Jinping; Yin Shiduan

1989-01-01

An MeV He + microbeam has been used to analyse a microscale semiconductor structure. The 2 MeV He + ion beam is limited to 25 μm diameter by a set of diaphragms and is further focused by a quadrupole quadruplet to 3μm diameter. The incident beam current on the sample is about 0.3 nA. The Rutherford backscattering (RBS) technique is applied to the measurement of the composition and depth profile in the near-surface region of a semiconductor integrated circuit. (author)

MeV He microbeam analysis of a semiconductor integrated circuit

Energy Technology Data Exchange (ETDEWEB)

Zhu Peiran; Liu Jiarui; Zhang Jinping; Yin Shiduan

1989-01-01

An MeV He/sup +/ microbeam has been used to analyse a microscale semiconductor structure. The 2 MeV He/sup +/ ion beam is limited to 25 /mu/m diameter by a set of diaphragms and is further focused by a quadrupole quadruplet to 3/mu/m diameter. The incident beam current on the sample is about 0.3 nA. The Rutherford backscattering (RBS) technique is applied to the measurement of the composition and depth profile in the near-surface region of a semiconductor integrated circuit.

Fusion reactor pumped laser

International Nuclear Information System (INIS)

Jassby, D.L.

1988-01-01

A nuclear pumped laser is described comprising: a toroidal fusion reactor, the reactor generating energetic neutrons; an annular gas cell disposed around the outer periphery of the reactor, the cell including an annular reflecting mirror disposed at the bottom of the cell and an annular output window disposed at the top of the cell; a gas lasing medium disposed within the annular cell for generating output laser radiation; neutron reflector material means disposed around the annular cell for reflecting neutrons incident thereon back into the gas cell; neutron moderator material means disposed between the reactor and the gas cell and between the gas cell and the neutron reflector material for moderating the energy of energetic neutrons from the reactor; converting means for converting energy from the moderated neutrons to energy pumping means for pumping the gas lasing medium; and beam compactor means for receiving output laser radiation from the annular output window and generating a single output laser beam therefrom

Influence of total beam current on HRTEM image resolution in differentially pumped ETEM with nitrogen gas.

Science.gov (United States)

Bright, A N; Yoshida, K; Tanaka, N

2013-01-01

Environmental transmission electron microscopy (ETEM) enables the study of catalytic and other reaction processes as they occur with Angstrom-level resolution. The microscope used is a dedicated ETEM (Titan ETEM, FEI Company) with a differential pumping vacuum system and apertures, allowing aberration corrected high-resolution transmission electron microscopy (HRTEM) imaging to be performed with gas pressures up to 20 mbar in the sample area and with significant advantages over membrane-type E-cell holders. The effect on image resolution of varying the nitrogen gas pressure, electron beam current density and total beam current were measured using information limit (Young's fringes) on a standard cross grating sample and from silicon crystal lattice imaging. As expected, increasing gas pressure causes a decrease in HRTEM image resolution. However, the total electron beam current also causes big changes in the image resolution (lower beam current giving better resolution), whereas varying the beam current density has almost no effect on resolution, a result that has not been reported previously. This behavior is seen even with zero-loss filtered imaging, which we believe shows that the drop in resolution is caused by elastic scattering at gas ions created by the incident electron beam. Suitable conditions for acquiring high resolution images in a gas environment are discussed. Lattice images at nitrogen pressures up to 16 mbar are shown, with 0.12 nm information transfer at 4 mbar. Copyright © 2012 Elsevier B.V. All rights reserved.

Polarization-dependent solitons in the strong coupling regime of semiconductor microcavities

International Nuclear Information System (INIS)

Fu, Y.; Zhang, W.L.; Wu, X.M.

2015-01-01

This paper studies the influence of polarization on formation of vectorial polariton soliton in semiconductor microcavities through numerical simulations. It is found that the polariton solution greatly depends on the polarization of both the pump and exciting fields. By properly choosing the pump and exciting field polarization, bright–bright or bright–dark vectorial polariton solitons can be formed. Especially, when the input conditions of pump or exciting field of the two opposite polarizations are slightly asymmetric, an interesting phenomenon that the dark solitons transform into bright solitons occurs in the branch of soliton solutions.

Laser systems configured to output a spectrally-consolidated laser beam and related methods

Science.gov (United States)

Koplow, Jeffrey P [San Ramon, CA

2012-01-10

A laser apparatus includes a plurality of pumps each of which is configured to emit a corresponding pump laser beam having a unique peak wavelength. The laser apparatus includes a spectral beam combiner configured to combine the corresponding pump laser beams into a substantially spatially-coherent pump laser beam having a pump spectrum that includes the unique peak wavelengths, and first and second selectively reflective elements spaced from each other to define a lasing cavity including a lasing medium therein. The lasing medium generates a plurality of gain spectra responsive to absorbing the pump laser beam. Each gain spectrum corresponds to a respective one of the unique peak wavelengths of the substantially spatially-coherent pump laser beam and partially overlaps with all other ones of the gain spectra. The reflective elements are configured to promote emission of a laser beam from the lasing medium with a peak wavelength common to each gain spectrum.

Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

International Nuclear Information System (INIS)

Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W.

2005-01-01

The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

Energy Technology Data Exchange (ETDEWEB)

Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W. (eds.)

2005-07-01

The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

Influence of total beam current on HRTEM image resolution in differentially pumped ETEM with nitrogen gas

International Nuclear Information System (INIS)

Bright, A.N.; Yoshida, K.; Tanaka, N.

2013-01-01

Environmental transmission electron microscopy (ETEM) enables the study of catalytic and other reaction processes as they occur with Angstrom-level resolution. The microscope used is a dedicated ETEM (Titan ETEM, FEI Company) with a differential pumping vacuum system and apertures, allowing aberration corrected high-resolution transmission electron microscopy (HRTEM) imaging to be performed with gas pressures up to 20 mbar in the sample area and with significant advantages over membrane-type E-cell holders. The effect on image resolution of varying the nitrogen gas pressure, electron beam current density and total beam current were measured using information limit (Young's fringes) on a standard cross grating sample and from silicon crystal lattice imaging. As expected, increasing gas pressure causes a decrease in HRTEM image resolution. However, the total electron beam current also causes big changes in the image resolution (lower beam current giving better resolution), whereas varying the beam current density has almost no effect on resolution, a result that has not been reported previously. This behavior is seen even with zero-loss filtered imaging, which we believe shows that the drop in resolution is caused by elastic scattering at gas ions created by the incident electron beam. Suitable conditions for acquiring high resolution images in a gas environment are discussed. Lattice images at nitrogen pressures up to 16 mbar are shown, with 0.12 nm information transfer at 4 mbar. -- Highlights: ► ETEM images with point resolution of 0.12 nm in 4 mbar of nitrogen gas. ► Clear Si lattice imaging with 16 mbar of nitrogen gas. ► ETEM image resolution in gas can be much improved by decreasing total beam current. ► Beam current density (beam convergence) has no effect on the image resolution.

Feasibility of solar-pumped dye lasers

Science.gov (United States)

Lee, Ja H.; Kim, Kyung C.; Kim, Kyong H.

1987-01-01

Dye laser gains were measured at various pump-beam irradiances on a dye cell in order to evaluate the feasibility of solar pumping. Rhodamine 6G dye was considered as a candidate for the solar-pumped laser because of its high utilization of the solar spectrum and high quantum efficiency. Measurements show that a solar concentration of 20,000 is required to reach the threshold of the dye.

Optical properties of hybrid semiconductor-metal structures

Energy Technology Data Exchange (ETDEWEB)

Kreilkamp, L.E.; Pohl, M.; Akimov, I.A.; Yakovlev, D.R.; Bayer, M. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Belotelov, V.I.; Zvezdin, A.K. [A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, 119992 Moscow (Russian Federation); Karczewski, G.; Wojtowicz, T. [Institute of Physics, Polish Academy of Sciences, 02668 Warsaw (Poland); Rudzinski, A.; Kahl, M. [Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund (Germany)

2012-07-01

We study the optical properties of hybrid nanostructures comprising a semiconductor CdTe quantum well (QW) separated by a thin CdMgTe cap layer of 40 nm from a patterned gold film. The CdTe/CdMgTe QW structure with a well width of 10nm was grown by molecular beam epitaxy. The one-dimensional periodic gold films on top were made using e-beam lithography and lift-off process. The investigated structures can be considered as plasmonic crystals because the metal films attached to the semiconductor are patterned with a period in the range from 475 to 600 nm, which is comparable to the surface plasmon-polariton (SPP) wavelength. Angle dependent reflection spectra at room temperature clearly show plasmonic resonances. PL spectra taken at low temperatures of about 10 K under below- and above-barrier illumination show significant modifications compared to the unstructured QW sample. The number of emission lines and their position shift change depending on the excitation energy. The role of exciton-SPP coupling and Schottky barrier at the semiconductor-metal interface are discussed.

Nonlinear interactions in magnetised piezoelectric semiconductor plasmas

International Nuclear Information System (INIS)

Sharma, Giriraj; Ghosh, S.

2000-01-01

Based on hydrodynamics model of plasmas an analytical investigation of frequency modulational interaction between copropagating high frequency pump and acoustic mode and consequent amplification (steady-state and transient) of the modulated waves is carried out in a magnetised piezoelectric semiconductor medium. The phenomenon of modulation amplification is treated as four wave interaction process involving cubic nonlinearity of the medium. Gain constants, threshold-pump intensities and optimum-pulse duration for the onset of modulational instabilities are estimated. The analysis has been performed in non-dispersive regime of the acoustic mode, which is one of the preconditions for achieving an appreciable initial steady-state growth of the modulated signal wave. It is found that the transient gain diminishes very rapidly if one chooses the pump pulse duration beyond the maximum gain point. Moreover, the desired value of the gain can be obtained by adjusting intensity and pulse duration of the pump and doping concentration of the medium concerned. (author)

Design of cryo-vacuum system for MW neutral beam injector

International Nuclear Information System (INIS)

Hu Chundong; Xie Yuanlai

2010-01-01

Neutral beam injector is an equipment that is used to produce and then to neutralize high energetic particle beam. A neutral beam injector (EAST-NBI) with MW magnitude neutral beam power is considered to be developed to support the EAST physical research. The requirements for vacuum system were analyzed after introducing the principle of EAST-NBI. A differential vacuum system structure was chosen after analyzing the performance of different vacuum pumping system structure. The gas sources and their characteristics were analyzed, and two inserted type cryocondensation pumps were chosen as main vacuum pump. The schematic structure of the two cryocondensation pump with pumping area 8 m 2 and 6 m 2 were given and their cooling method and temperature control mode were determined. (authors)

Ohmic metallization technology for wide band-gap semiconductors

International Nuclear Information System (INIS)

Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

2002-01-01

Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

Diode-pumped glass laser (10 J X 10 HZ) development

International Nuclear Information System (INIS)

Tadashi Kanabe; Toshiyuki Kawashima; Masanobu Yamanaka; Masahiro Nakatsuka; Yasukazu Izawa; Takeshi Kanzaki; Hirofumi Kan; Sadao Nakai

2002-01-01

A high-energy, high beam quality, diode-pumped 1053-nm Nd:phosphate glass laser amplifier has been demonstrated in order to verify the conceptual design of HALNA (High Average-power Laser for Nuclear-fusion Application): a diode-pumped solid-state laser based on a water-cooled zig-zag slab optical geometry. This amplifier yielded 8.5 J output energy per pulse at 0.5 Hz in a 20 ns pulse of two times the diffraction limit beam quality with an optical-to-optical conversion efficiency of 10.9%. The experimental results revealed that the primary requirements for the IFE driver, such as diode-pumping, energy storage and extraction efficiencies, and beam quality have been fulfilled

Design of ultrahigh brightness solar-pumped disk laser.

Science.gov (United States)

Liang, Dawei; Almeida, Joana

2012-09-10

To significantly improve the solar-pumped laser beam brightness, a multi-Fresnel lens scheme is proposed for side-pumping either a single-crystal Nd:YAG or a core-doped ceramic Sm(3+) Nd:YAG disk. Optimum laser system parameters are found through ZEMAX and LASCAD numerical analysis. An ultrahigh laser beam figure of merit B of 53 W is numerically calculated, corresponding to a significant enhancement of more than 180 times over the previous record. 17.7 W/m(2) collection efficiency is also numerically attained. The strong thermal effects that have hampered present-day rod-type solar-pumped lasers can also be largely alleviated.

Experimental demonstration of spatially coherent beam combining using optical parametric amplification.

Science.gov (United States)

Kurita, Takashi; Sueda, Keiichi; Tsubakimoto, Koji; Miyanaga, Noriaki

2010-07-05

We experimentally demonstrated coherent beam combining using optical parametric amplification with a nonlinear crystal pumped by random-phased multiple-beam array of the second harmonic of a Nd:YAG laser at 10-Hz repetition rate. In the proof-of-principle experiment, the phase jump between two pump beams was precisely controlled by a motorized actuator. For the demonstration of multiple-beam combining a random phase plate was used to create random-phased beamlets as a pump pulse. Far-field patterns of the pump, the signal, and the idler indicated that the spatially coherent signal beams were obtained on both cases. This approach allows scaling of the intensity of optical parametric chirped pulse amplification up to the exa-watt level while maintaining diffraction-limited beam quality.

Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers

Science.gov (United States)

Zeng, Linfei

This thesis proposes the molecular beam epitaxy (MBE) growth and characterization of a new Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se based semiconductor materials system on InP substrates for visible light emitting diodes (LED) and lasers. The growth conditions for lattice-matched Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se layers with the desired bandgap have been established and optimized. A chemical etching technique to measure the defect density of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se materials has been established. The accuracy of this method for revealing stacking faults and dislocations was verified by plan-view TEM. Using the techniques such as III-V buffer layer, Zn-irradiation, low-temperature growth, ZnCdSe interfacial layer and growth interruption to improve the quality of the interface of III-V and II-VI, the material quality of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se has been improved dramatically. Defect density has been reduced from 10sp{10}\\ cmsp{-2} to {˜}5×10sp4\\ cmsp{-2}. The properties of this material system such as the quality and strain state in the epilayer, the dependence of bandgap on temperature, and the band offset have been studied by using double crystal x-ray diffraction, photoluminescence and capacitance voltage measurements. The ZnCdSe/ZnCdMgSe based quantum well (QW) structures have been grown and studied. Optically pumped lasing with emission range from red to blue has been obtained from ZnCdSe/ZnCdMgSe based separate-confinement single QW laser structures. The results demonstrate the potential for these materials as integrated full color display devices. Preliminary studies of the degradation behavior of ZnCdSe/ZnCdMgSe QW were performed. No dark line defects (DLDs) were observed during the degradation. A very strong room temperature differential negative resistance behavior was observed from Al/Znsb{0.61}Cdsb{0.39}Se/nsp+-InP devices, which is useful in millimeter-wave applications. We also found that these devices can be set to either in highly conductive or

1.8kW laser diode pumped YAG laser; Shutsuryoku 1.8kW no handotai laser reiki YAG laser

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

Toshiba Corporation, as a participant in Ministry of International Trade and Industry`s `photon measurement and processing technology project` since August, 1997, is engaged in the development of an energy-efficient LD (laser diode) pumped semiconductor YAG (yttrium-aluminum-garnet) laser device to be used for welding and cutting. It is a 5-year project and the goal is a mean output of 10kW and efficiency of 20%. In this article, a simulation program is developed which carries out calculation about element technology items such as the tracking of the beam from the pumping LD and the excitation distribution, temperature distribution, thermal stress distribution, etc., in the YAG rod. An oscillator is constructed, based on the results of the simulation, and it exhibits a world-high class continuous laser performance of a 1.8kW output and 13% efficiency. The record of 13% efficiency is five times higher than that achieved by the conventional lamp-driven YAG laser device. (translated by NEDO)

Performance test of a ceramic turbo-viscous pump

International Nuclear Information System (INIS)

Abe, Tetsuya; Hiroki, Seiji; Murakami, Yoshio; Shiraishi, Shigeyuki; Totoura, Sadayuki; Ohtaki, Takashi.

1994-01-01

In the special fields of nuclear fusion facilities and semiconductor production installation, the development of new vacuum pumps which can cope with strong magnetic fields, high temperature gas and corrosive gas is demanded. Mitsubishi Heavy Industries Ltd. has advanced the development of ceramic turbo-molecular pumps and ceramic turbo-viscous pumps, which use ceramic rotors and gas bearings since 1985. The evaluation test of the ceramic turbo-viscous vacuum pump CT-3000H which can evacuate from atmospheric pressure to high vacuum with one pump was carried out, and the experimental results on the performance and the reliability were obtained, therefore, those are reported in this paper. The structure, specification and features of the CT-3000H are shown. The exhaust performance test of the pump was carried out in conformity with the standard of the Vacuum Society of Japan, JVIS 005 'Method of performance test for turbo-molecular pumps'. The gases used were nitrogen and helium. The results are shown. The exhaust test from atmospheric pressure was carried out by two methods, and the results are shown. (K.I.)

Multiphoton electronic-spin generation and transmission spectroscopy in n-type GaAs

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M., E-mail: m.miah@griffith.edu.a [Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2011-01-17

Multiphoton electronic-spin generation in semiconductors was investigated using differential transmission spectroscopy. The generation of the electronic spins in the semiconductor samples were achieved by multiphoton pumping with circularly polarized light beam and was probed by the spin-resolved transmission of the samples. The electronic spin-polarization of conduction band was estimated and was found to depend on the delay of the probe beam, temperature as well as on the multiphoton pumping energy. The temperature dependence showed a decrease of the spin-polarization with increasing temperature. The electronic spin-polarization was found to depolarize rapidly for multiphoton pumping energy larger than the energy gap of the split-off band to the conduction band. The results were compared with those obtained in one-photon pumping, which shows that an enhancement of the electronic spin-polarization was achieved in multiphoton pumping. The findings resulting from this investigation might have potential applications in opto-spintronics, where the generation of highly polarized electronic spins is required.

Multiphoton electronic-spin generation and transmission spectroscopy in n-type GaAs

International Nuclear Information System (INIS)

Idrish Miah, M.

2011-01-01

Multiphoton electronic-spin generation in semiconductors was investigated using differential transmission spectroscopy. The generation of the electronic spins in the semiconductor samples were achieved by multiphoton pumping with circularly polarized light beam and was probed by the spin-resolved transmission of the samples. The electronic spin-polarization of conduction band was estimated and was found to depend on the delay of the probe beam, temperature as well as on the multiphoton pumping energy. The temperature dependence showed a decrease of the spin-polarization with increasing temperature. The electronic spin-polarization was found to depolarize rapidly for multiphoton pumping energy larger than the energy gap of the split-off band to the conduction band. The results were compared with those obtained in one-photon pumping, which shows that an enhancement of the electronic spin-polarization was achieved in multiphoton pumping. The findings resulting from this investigation might have potential applications in opto-spintronics, where the generation of highly polarized electronic spins is required.

Ion implantation for semiconductors

International Nuclear Information System (INIS)

Grey-Morgan, T.

1995-01-01

Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

Frequency dependence of the pump-to-signal RIN transfer in fiber optical parametric amplifiers

DEFF Research Database (Denmark)

Pakarzadeh Dezfuli Nezhad, Hassan; Rottwitt, Karsten; Zakery, A.

2009-01-01

Using a numerical model, the frequency dependence of the pump-to-signal RIN transfer in FOPAs has been investigated. The model includes fiber loss, pump depletion as well as difference in group velocity among interacting beams.......Using a numerical model, the frequency dependence of the pump-to-signal RIN transfer in FOPAs has been investigated. The model includes fiber loss, pump depletion as well as difference in group velocity among interacting beams....

Synchronous characterization of semiconductor microcavity laser beam.

Science.gov (United States)

Wang, T; Lippi, G L

2015-06-01

We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

A Comprehensive Approach Towards Optimizing the Xenon Plasma Focused Ion Beam Instrument for Semiconductor Failure Analysis Applications.

Science.gov (United States)

Subramaniam, Srinivas; Huening, Jennifer; Richards, John; Johnson, Kevin

2017-08-01

The xenon plasma focused ion beam instrument (PFIB), holds significant promise in expanding the applications of focused ion beams in new technology thrust areas. In this paper, we have explored the operational characteristics of a Tescan FERA3 XMH PFIB instrument with the aim of meeting current and future challenges in the semiconductor industry. A two part approach, with the first part aimed at optimizing the ion column and the second optimizing specimen preparation, has been undertaken. Detailed studies characterizing the ion column, optimizing for high-current/high mill rate activities, have been described to support a better understanding of the PFIB. In addition, a novel single-crystal sacrificial mask method has been developed and implemented for use in the PFIB. Using this combined approach, we have achieved high-quality images with minimal artifacts, while retaining the shorter throughput times of the PFIB. Although the work presented in this paper has been performed on a specific instrument, the authors hope that these studies will provide general insight to direct further improvement of PFIB design and applications.

Towards filament free semiconductor lasers

DEFF Research Database (Denmark)

McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

2000-01-01

We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

Particle beam accelerator

International Nuclear Information System (INIS)

Turner, N.L.

1982-01-01

A particle beam accelerator is described which has several electrodes that are selectively short circuited together synchronously with changes in the magnitude of a DC voltage applied to the accelerator. By this method a substantially constant voltage gradient is maintained along the length of the unshortened electrodes despite variations in the energy applied to the beam by the accelerator. The invention has particular application to accelerating ion beams that are implanted into semiconductor wafers. (U.K.)

Semiconductor laser using multimode interference principle

Science.gov (United States)

Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

2018-01-01

Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

Measurements of a prototype synchrotron radiation pumped absorber for future light sources

International Nuclear Information System (INIS)

Chou, T.S.; Foerster, C.L.; Halama, H.; Lanni, C.

1988-01-01

In the new generation of advanced synchrotron light sources, the conventional concept of distributed pumping is no longer suitable for removing the gas load caused by photon stimulated desorption (PSD). A new concept using a combination of photon absorber and pumping station has been designed, constructed, and installed in the U1OB beam line at the VUV ring of the National Synchrotron Light Source. The system consists of an electrically insulated water cooled copper block, a titanium sublimation pump, calibrated BA gauges, a calibrated RGA, and a known conductance. A photon beam 10 milliradian wide and 3.26 milliradian high, having critical energy of 500 eV, is directed on the absorber. PSD yield is studied as a function of total beam dose and absorber surface preparation. The results from this experiment, pump characteristics, design of an absorber pump for future light sources, and the pressure improvement factors will be presented. 5 refs., 7 figs., 1 tab

Cladding-pumped ytterbium-doped fiber laser with radially polarized output.

Science.gov (United States)

Lin, Di; Daniel, J M O; Gecevičius, M; Beresna, M; Kazansky, P G; Clarkson, W A

2014-09-15

A simple technique for directly generating a radially polarized output beam from a cladding-pumped ytterbium-doped fiber laser is reported. Our approach is based on the use of a nanograting spatially variant waveplate as an intracavity polarization-controlling element. The laser yielded ~32 W of output power (limited by available pump power) with a radially polarized TM (01)-mode output beam at 1040 nm with a corresponding slope efficiency of 66% and a polarization purity of 95%. The beam-propagation factor (M(2)) was measured to be ~1.9-2.1.

Environmental safety issues for semiconductors (research on scarce materials recycling)

International Nuclear Information System (INIS)

Izumi, Shigekazu

2004-01-01

In the 21st century, in the fabrication of various industrial parts, particularly, current and future electronics devices in the semiconductor industry, environmental safety issues should be carefully considered. We coined a new term, environmental safety issues for semiconductors, considering our semiconductor research and technology which include environmental and ecological factors. The main object of this analysis is to address the present situation of environmental safety problems in the semiconductor industry; some of which are: (1) the generation and use of hazardous toxic gases in the crystal growth procedure such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), (2) the generation of industrial toxic wastes in the semiconductor process and (3) scarce materials recycling from wastes in the MBE and MOCVD growth procedure

Plasma/Neutral-Beam Etching Apparatus

Science.gov (United States)

Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

1989-01-01

Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

Pump depletion effects in thermal degenerate four-wave mixing

International Nuclear Information System (INIS)

Guha, S.; Chen, W.

1987-01-01

Characteristics such as a large magnitude of nonlinearity, fast response, broadband operation, and easy availability make absorbing liquids attractive candidates for performing phase conjugation of optical beams by degenerate four-wave mixing. The coupled-wave equations describing the interaction of four optical fields in an absorbing medium have been solved previously for the case of no pump depletion and no self-action of any of the beams. When studying phase conjugation oscillation, however, the effect of depletion of the pump beams on the phase conjugate reflectivity must be considered. Moreover, in absorbing media the self-action effects are always present. The coupled-wave equations, including the self-action terms for all four waves involved, are derived here for the first time to the authors' knowledge. For the case of small absorption, these equations are solved analytically, and the effect of pump depletion on phase conjugate reflectivity R is determined. In the absence of the pump depletion, R is proportional to tan 2 (Ql), where Ql is a dimensionless gain parameter characterizing the nonlinear medium and the input pump power. When pump depletion and self-action are included, R does not go to infinity when Ql equals odd multiples of π2. Instead R takes on values dependent on the probe ratio q 1 , which is the ratio of the input probe irradiance to the input pump irradiance. The authors find that the maximum value for R is 1q 1 . They also find that for Ql close to odd multiples of π2, the reflectivity is significantly reduced from the value obtained by ignoring pump depletion, even for probe ratios as small as one-tenth of 1%. Experimental confirmation of this theory, using an argon-ion laser as the pump and carbon tetrachloride mixed with a dye as the absorbing medium, is in progress and is reported

Quantum pump in a system with both Rashba and Dresselhaus spin–orbit couplings

International Nuclear Information System (INIS)

Xiao, Yun-Chang; Deng, Wei-Yin; Deng, Wen-Ji; Zhu, Rui; Wang, Rui-Qiang

2013-01-01

We investigate the adiabatic quantum pump phenomena in a semiconductor with Rashba and Dresselhaus spin–orbit couplings (SOCs). Although it is driven by applying spin-independent potentials, the system can pump out spin-dependent currents, i.e., generate nonzero charge and spin currents at the same time. The SOC can modulate both the magnitude and the direction of currents, exhibiting an oscillating behavior. Moreover, it is shown that the spin current has different sensitivities to two types of the SOC. These results provide an alternative method to adjust pumped current and might be helpful for designing spin pumping devices.

Radiation from a Relativistic Electron Beam in a Molecular Medium due to Parametric Pumping by a Strong Electromagnetic Wave,

Science.gov (United States)

1981-02-01

UNIVERSITY OF MARYLAND DEPARTMENT OF PHYSICS 4WJD ASTRONOMY COLLG PAM A 2 3i 81 4 30) 235. RADIATION FROM A .ELATIVISTIC_§LECTRON BEAM IN AZOLECULAR...A MOLECULAR MEDIUM DUE TO PARAMETRIC PUMPING BY A STRONG ELECTROMAGNETIC WAVE L. Stenflo Department of Plasma Physics Umel University S-90187 Umel...GUteborg, Sweden and Laboratory for Plasma and Fusion Energy Studies University of Maryland College Park, Maryland 20742 Physics Publication Number 81

α-particle shielding of semiconductor device

International Nuclear Information System (INIS)

McKeown, P.J.A.; Perry, J.P.; Waddell, J.M.; Barker, K.D.

1981-01-01

Soft errors in semiconductor devices, e.g. random access memories, arising from the bombardment of the device by alpha particles produced by the disintegration of minute traces of uranium or thorium in the packaging materials are prevented by coating the active surface of the semiconductor chip with a thin layer, e.g. 20 to 100 microns of an organic polymeric material, this layer being of sufficient thickness to absorb the particles. Typically, the polymer is a poly-imide formed by u.v. electron-beam or thermal curing of liquid monomer applied to the chip surface. (author)

Application of positron annihilation techniques for semiconductor studies

International Nuclear Information System (INIS)

Karwasz, G.P.; Zecca, A.; Brusa, R.S.; Pliszka, D.

2004-01-01

Positron annihilation techniques, being non-destructive, allowing depth profiling down to a few micrometers and detecting open-volume defects (vacancies, dislocations etc.) at single ppm concentrations constitute a valuable and complementary method, compared to other solid-state-physics studies. We give examples of investigation in the field of semiconductors with different techniques, both with and without use of positron low-energy beams. The Doppler broadening of the 511 keV annihilation line method and the slow positron beam were used to study helium-implanted silicon and the surface reduction processes in semiconducting glasses. The positron lifetime technique and coincidence spectra of the Doppler broadening were used for systematic studies of metals and semiconductors. Doppler-coincidence method was then used to identify the kinetics of oxygen precipitates in Czochralski-grown silicon

Self-trapped excitonic green emission from layered semiconductors

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

Crystals of layered semiconductor are grown by Bridgman technique and are studied them under two-photon excitation by a Q-switched 20-ns pulse laser. The photoluminescence (PL) emission spectra of the crystals are measured at various pumping powers and temperatures. The PL spectra appear broad and structureless emissions with their peaks in the green spectral region. The characteristic emissions are from self-trapped excitons of the crystals. An analysis of the spectra measured at various pumping powers shows a quadratic dependence of the PL peak intensity on the power, confirming a biphotonic process of the two-photon pumping. The temperature dependence shows an enhancement of the nonlinear response at low temperatures. The activation energy is estimated and found to be 2.4 meV. The roles of the bound excitons in the observed PL are discussed briefly.

Self-trapped excitonic green emission from layered semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2009-08-15

Crystals of layered semiconductor are grown by Bridgman technique and are studied them under two-photon excitation by a Q-switched 20-ns pulse laser. The photoluminescence (PL) emission spectra of the crystals are measured at various pumping powers and temperatures. The PL spectra appear broad and structureless emissions with their peaks in the green spectral region. The characteristic emissions are from self-trapped excitons of the crystals. An analysis of the spectra measured at various pumping powers shows a quadratic dependence of the PL peak intensity on the power, confirming a biphotonic process of the two-photon pumping. The temperature dependence shows an enhancement of the nonlinear response at low temperatures. The activation energy is estimated and found to be 2.4 meV. The roles of the bound excitons in the observed PL are discussed briefly.

Thermodynamic performance of multi-stage gradational lead screw vacuum pump

Science.gov (United States)

Zhao, Fan; Zhang, Shiwei; Sun, Kun; Zhang, Zhijun

2018-02-01

As a kind of dry mechanical vacuum pump, the twin-screw vacuum pump has an outstanding pumping performance during operation, widely used in the semiconductor industry. Compared with the constant lead screw (CLS) vacuum pump, the gradational lead screw (GLS) vacuum pump is more popularly applied in recent years. Nevertheless, not many comparative studies on the thermodynamic performance of GLS vacuum pump can be found in the literature. Our study focuses on one type of GLS vacuum pump, the multi-stage gradational lead screw (MGLS) vacuum pump, gives a detailed description of its construction and illustrates it with the drawing. Based on the structural analysis, the thermodynamic procedure is divided into four distinctive processes, including sucking process, transferring (compressing) process, backlashing process and exhausting process. The internal mechanism of each process is qualitatively illustrated and the mathematical expressions of seven thermodynamic parameters are given under the ideal situation. The performance curves of MGLS vacuum pump are plotted by MATLAB software and compared with those of the CLS vacuum pump in the same case. The results can well explain why the MGLS vacuum pump has more favorable pumping performance than the CLS vacuum pump in saving energy, reducing noise and heat dissipation.

Positron beam studies of solids and surfaces: A summary

International Nuclear Information System (INIS)

Coleman, P.G.

2006-01-01

A personal overview is given of the advances in positron beam studies of solids and surfaces presented at the 10th International Workshop on Positron Beams, held in Doha, Qatar, in March 2005. Solids studied include semiconductors, metals, alloys and insulators, as well as biophysical systems. Surface studies focussed on positron annihilation-induced Auger electron spectroscopy (PAES), but interesting applications of positron-surface interactions in fields as diverse as semiconductor technology and studies of the interstellar medium serve to illustrate once again the breadth of scientific endeavour covered by slow positron beam investigations

Positron beam studies of solids and surfaces: A summary

Science.gov (United States)

Coleman, P. G.

2006-02-01

A personal overview is given of the advances in positron beam studies of solids and surfaces presented at the 10th International Workshop on Positron Beams, held in Doha, Qatar, in March 2005. Solids studied include semiconductors, metals, alloys and insulators, as well as biophysical systems. Surface studies focussed on positron annihilation-induced Auger electron spectroscopy (PAES), but interesting applications of positron-surface interactions in fields as diverse as semiconductor technology and studies of the interstellar medium serve to illustrate once again the breadth of scientific endeavour covered by slow positron beam investigations.

Vibrational Spectroscopy on Photoexcited Dye-Sensitized Films via Pump-Degenerate Four-Wave Mixing.

Science.gov (United States)

Abraham, Baxter; Fan, Hao; Galoppini, Elena; Gundlach, Lars

2018-03-01

Molecular sensitization of semiconductor films is an important technology for energy and environmental applications including solar energy conversion, photocatalytic hydrogen production, and water purification. Dye-sensitized films are also scientifically complex and interesting systems with a long history of research. In most applications, photoinduced heterogeneous electron transfer (HET) at the molecule/semiconductor interface is of critical importance, and while great progress has been made in understanding HET, many open questions remain. Of particular interest is the role of combined electronic and vibrational effects and coherence of the dye during HET. The ultrafast nature of the process, the rapid intramolecular vibrational energy redistribution, and vibrational cooling present complications in the study of vibronic coupling in HET. We present the application of a time domain vibrational spectroscopy-pump-degenerate four-wave mixing (pump-DFWM)-to dye-sensitized solid-state semiconductor films. Pump-DFWM can measure Raman-active vibrational modes that are triggered by excitation of the sample with an actinic pump pulse. Modifications to the instrument for solid-state samples and its application to an anatase TiO 2 film sensitized by a Zn-porphyrin dye are discussed. We show an effective combination of experimental techniques to overcome typical challenges in measuring solid-state samples with laser spectroscopy and observe molecular vibrations following HET in a picosecond time window. The cation spectrum of the dye shows modes that can be assigned to the linker group and a mode that is localized on the Zn-phorphyrin chromophore and that is connected to photoexcitation.

Ionization annealing of semiconductor crystals. Part two: the experiment

Directory of Open Access Journals (Sweden)

Garkavenko A. S.

2014-12-01

Full Text Available There is a conception that irradiation of semiconductor crystals with high energy electrons (300 keV results in a significant and irreversible deterioration of their electrical, optical and structural properties. Semiconductors are typically irradiated by low voltage electron accelerators with a continuous flow, the current density in such accelerators is 10–5—10–6 A/cm2, the energy — 0,3—1 MeV. All changes in the properties after such irradiation are resistant at room temperature, and marked properties recovery to baseline values is observed only after prolonged heating of the crystals to a high temperature. In contrast, the authors in their studies observe an improvement of the structural properties of semiconductor crystals (annealing of defects under irradiation with powerful (high current pulsed electron beams of high energy (E0 = 0,3–1 MeV, t = 0,1—10 ns, Ω = 1—10 Hz, j = 20—300 A/cm2. In their previous paper, the authors presented theoretical basis of this effect. This article describes an experimental study on the influence of high-current pulsed electron beams on the optical homogeneity of semiconductor GaAs and CdS crystals, confirming the theory put forward earlier.

Effects of ion sputtering on semiconductor surfaces

International Nuclear Information System (INIS)

McGuire, G.E.

1978-01-01

Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

High pumping-power fiber combiner for double-cladding fiber lasers and amplifiers

Science.gov (United States)

Zheng, Jinkun; Zhao, Wei; Zhao, Baoyin; Li, Zhe; Chang, Chang; Li, Gang; Gao, Qi; Ju, Pei; Gao, Wei; She, Shengfei; Wu, Peng; Hou, Chaoqi; Li, Weinan

2018-03-01

A high pumping-power fiber combiner for backward pumping configurations is fabricated and demonstrated by manufacturing process refinement. The pump power handling capability of every pump fiber can extend to 600 W, corresponding to the average pump coupling efficiency of 94.83%. Totally, 2.67-kW output power with the beam quality factor M2 of 1.41 was obtained, using this combiner in the fiber amplifier experimental setup. In addition, the temperature of the splicing region was less than 50.0°C in the designed combiner under the action of circulating cooling water. The experimental results prove that the designed combiner is a promising integrated all-fiber device for multikilowatt continuous-wave fiber laser with excellent beam quality.

Development of a CMOS Route for Electron Pumps to Be Used in Quantum Metrology

Directory of Open Access Journals (Sweden)

Sylvain Barraud

2016-03-01

Full Text Available The definition of the ampere will change in the next few years. This electrical base unit of the S.I. will be redefined by fixing the value of the charge quantum, i.e., the electron charge e. As a result electron pumps will become the natural device for the mise en pratique of this new ampere. In the last years semiconductor electron pumps have emerged as the most advanced systems, both in terms of speed and precision. Another figure of merit for a metrological device would be its ability to be predictible and shared. For that reason a mature fabrication process would certainly be an advantage. In this article we present electron pumps made within a CMOS (Complementary Metal Oxide Semiconductor research facility on 300 mm silicon-on-insulator wafers, using advanced microelectronics tools and processes. We give an overview of the whole integration scheme and emphasize the fabrication steps which differ from the normal CMOS route.

Progress in ion implantation equipment for semiconductor manufacturing

International Nuclear Information System (INIS)

Kawai, Tadashi; Naito, Masao

1987-01-01

In the semiconductor device manufacturing industry, ion implantation systems are used to dope semiconductor substrates with impurities that act as donor or acceptor. In an ion implantation system, required impurity ions are generated from an ion source, subjected to mass analysis, accelerated, converged and implanted in semiconductor wafers. High-tension arc tends to cause troubles in these systems, but improvement in design increased the average operation rate of medium-power systems from bout 70 percent to 90 percent during the past 10 years. Freeman type ion sources have replaced most RF ion sources and cold cathode PIG sources, which had been widely used until the early 1970s. Many of the recent ion sources are equipped with a P and As vaporizer to increase the beam intensity. By an increased beam intensity or decreased handling time in combination with an automatic handling system, the throughput has reached 330 wafers per hour for 10 second implantation. The yield has increased due to the development of improved scanning methods, vacuum devices such as cryopump, and processes and apparatus that serve for preventing particles from being contained in micro-devices. Various other improvements have been made to permit efficient production. (Nogami, K.)

Direct solar-pumped iodine laser amplifier

Science.gov (United States)

Han, Kwang S.

1987-01-01

This semiannual progress report covers the period from March 1, 1987 to September 30, 1987 under NASA grant NAG1-441 entitled 'Direct solar-pumped iodine laser amplifier'. During this period Nd:YAG and Nd:Cr:GSGG crystals have been tested for the solar-simulator pumped cw laser, and loss mechanisms of the laser output power in a flashlamp-pumped iodine laser also have been identified theoretically. It was observed that the threshold pump-beam intensities for both Nd:YAG and Nd:Cr:GSGG crystals were about 1000 solar constants, and the cw laser operation of the Nd:Cr:GSGG crystal was more difficult than that of the Nd:YAG crystal under the solar-simulator pumping. The possibility of the Nd:Cr:GSGG laser operation with a fast continuously chopped pumping was also observed. In addition, good agreement between the theoretical calculations and the experimental data on the loss mechanisms of a flashlamp-pumped iodine laser at various fill pressures and various lasants was achieved.

Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

International Nuclear Information System (INIS)

Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

2001-01-01

We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

High temperature semiconductor diode laser pumps for high energy laser applications

Science.gov (United States)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Distributed ion pump related transverse instability in CESR

Energy Technology Data Exchange (ETDEWEB)

Rogers, J T; Holmquist, T [Cornell Univ., Ithaca, NY (United States). Lab. of Nuclear Studies

1996-08-01

An anomalous damping or growth of transverse coupled bunch modes is observed in the Cornell Electron Storage Ring (CESR). The growth rates and tune shifts of these modes are a highly nonlinear function of current. Unlike an instability produced by the coupling impedance of the vacuum chamber, the magnitude of the growth rate first increases, then declines, as the beam current is increased. The effect is known to be related to the operation of the distributed ion pumps, as it disappears when the pumps are not powered. We review the observations of this effect, and show that it can be explained by the presence of electrons trapped in the CESR chamber by the field of the dipole magnets and the electrostatic leakage field of the distributed ion pumps. Photoelectrons are introduced into the chamber by synchrotron radiation and can be captured in or ejected from the chamber by the passage of the beam. The transverse position of the beam thus modulates the trapped photoelectron charge density, which in turn deflects the beam, creating growth or damping and a tune shift for each coupled bunch mode. Predictions of the dependence of growth rate and tune shift on bunch current and bunch pattern by a numerical model of this process are in approximate agreement with observations. (author)

The ATLAS inner detector semiconductor tracker (Si and GaAs strips): review of the 1995 beam tests at the CERN SPS H8 beamline

International Nuclear Information System (INIS)

Moorhead, G.F.

1995-01-01

This talk will consist of a brief review of the ATLAS Inner Detector (ID) Semiconductor Tracker (SCT) strip detector (both silicon and gallium arsenide) beam tests conducted at the ATLAS test beam facility at the CERN SPS H8 beamline. It will include a brief overview of the H8 facilities, the experimental layout of the SCT/Strip apparatus, the data acquisition system, some of the online software tools and the high precision silicon hodoscope and timing modules used. A very brief indication of some of the main varieties of detector systems tested and the measurements performed will be given. Throughout some emphasis will be placed on the contributions and-interests of members of the Melbourne group. (author)

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

Science.gov (United States)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Push-pull optical pumping of pure superposition states

International Nuclear Information System (INIS)

Jau, Y.-Y.; Miron, E.; Post, A.B.; Kuzma, N.N.; Happer, W.

2004-01-01

A new optical pumping method, 'push-pull pumping', can produce very nearly pure, coherent superposition states between the initial and the final sublevels of the important field-independent 0-0 clock resonance of alkali-metal atoms. The key requirement for push-pull pumping is the use of D1 resonant light which alternates between left and right circular polarization at the Bohr frequency of the state. The new pumping method works for a wide range of conditions, including atomic beams with almost no collisions, and atoms in buffer gases with pressures of many atmospheres

Cryopump behavior in the presence of beam or nuclear radiation

International Nuclear Information System (INIS)

Law, P.K.

1977-12-01

Cryocondensation pumping has been proposed to be the method of gas removal for neutral-beam refueled fusion reactors. A cryocondensation pumping unit has been constructed to test design concepts and compatibility with conditions under actual beam operation and nuclear radiation environment. Various operating parameters for this test pumping unit have been measured, including pumping speeds for various gases and beam desorption effects. An experiment has been planned at the Berkeley Research Reactor to measure the desorption effects of high energy neutrons and gamma radiation. A foil activation method has been devised to accurately assess the energy spectrum of this neutron source, which is expected to be comparable to that of the Tokamak Fusion Test Reactor

A drift-pump coil design for a Tandem Mirror Reactor

International Nuclear Information System (INIS)

Neef, W.S.; Logan, B.

1983-01-01

This paper describes both the theory and mechanical design behind a new concept for trapped ion removal from tandem mirror end plugs. The design has been developed for the Mirror Advanced Reactor Study (MARS). The new drift-pump coils replace charge exchange pump beams. Pump beams consume large amounts of power and seriously reduce reactor performance. Drift-pump coils consume only a few megawatts of power and introduce no added burden to the reactor vacuum pumps. In addition, they are easy to replace. The coils are similar in shape to a paper clip and are located at two positions in each end plug. The coils between the transition coil and the first anchor yinyang serve to remove ions trapped in the magnetic well just outboard of the high field choke coil. The coils located between the anchor coil set and the plug coil set remove sloshing ions and trapped cold ions from the plug region

Synchronously pumped optical parametric oscillation in periodically poled lithium niobate with 1-W average output power

NARCIS (Netherlands)

Graf, T.; McConnell, G.; Ferguson, A.I.; Bente, E.A.J.M.; Burns, D.; Dawson, M.D.

1999-01-01

We report on a rugged all-solid-state laser source of near-IR radiation in the range of 1461–1601 nm based on a high-power Nd:YVO4 laser that is mode locked by a semiconductor saturable Bragg reflector as the pump source of a synchronously pumped optical parametric oscillator with a periodically

Imaging the motion of electrons across semiconductor heterojunctions

Science.gov (United States)

Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

2017-01-01

Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II-VI based semiconductor disk lasers

International Nuclear Information System (INIS)

De Jesus, Joel; Gayen, Swapan K.; Garcia, Thor A.; Tamargo, Maria C.; Kartazaev, Vladimir; Jones, Brynmor E.; Schlosser, Peter J.; Hastie, Jennifer E.

2015-01-01

We report the structural and optical properties of molecular beam epitaxy grown II-VI semiconductor multiple quantum well (MQW) structures and distributed Bragg reflector (DBR) on InP substrates for application in developing optically-pumped semiconductor disk lasers (SDLs) operating in the green spectral range. One sample was grown directly on an InP substrate with an InGaAs buffer layer, while another had a 5-period ZnCdMgSe-based DBR grown on the InGaAs/InP substrate. X-ray diffraction and scanning electron microscopy measurements revealed sharp superlattice peaks and abrupt layer interfaces, while steady-state photoluminescence measurements demonstrated surface emission between 540-570 nm. Under pulsed excitation both samples exhibited features of amplified spontaneous emission (ASE) or stimulated emission, accompanied by luminescence lifetime shortening. The sample with the DBR showed higher surface luminescence and the onset of ASE at lower pump power. To further explore the design and performance of a ZnCdMgSe-based DBR, a 20-period DBR was grown and a reflectivity of 83% was obtained at ∝560 nm. We estimate that a DBR with ∝40 periods would be needed for optimal performance in a SDL using these materials. These results show the potential of II-VI MQW structures on InP substrates for the development of SDLs operational in the green-yellow wavelength range. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Focusing an antimatter beam with matter

CERN Document Server

CERN. Geneva

2000-01-01

An experiment at the Stanford Linear Accelerator Center has recently focused positron beams by means of a plasma lens. This is the first time this process has been observed. The process started with a positron beam from the SLAC PEP-II positron source. This was sent through a damping ring and then accelerated to 28.5 GeV in the SLAC linac with a bunch intensity of 1-2*10/sup 10/. The beam was delivered to the Final Focus Test Beam Facility (FFTB) at a rate of 1 or 10 Hz. At the focal point of the FFTB transport, a special plasma chamber contains a 3 mm diameter pulsed gas nozzle through which either hydrogen or nitrogen gas is "puffed" into the ultrahigh vacuum system at plenum gas pressures up to 75 atm with a discharge time of 800 mu s. The gas is pumped off by a Roots-type pump. On either side of the central chamber are differential pumping sections semi- isolated from each other by thin titanium windows with small (2-5 mm diameter) apertures for the positron beams to pass through. These sections are evacu...

Punchets: nonlinear transport in Hamiltonian pump-ratchet hybrids

Science.gov (United States)

Dittrich, Thomas; Medina Sánchez, Nicolás

2018-02-01

‘Punchets’ are hybrids between ratchets and pumps, combining a spatially periodic static potential, typically asymmetric under space inversion, with a local driving that breaks time-reversal invariance, and are intended to model metal or semiconductor surfaces irradiated by a collimated laser beam. Their crucial feature is irregular driven scattering between asymptotic regions supporting periodic (as opposed to free) motion. With all binary spatio-temporal symmetries broken, scattering in punchets typically generates directed currents. We here study the underlying nonlinear transport mechanisms, from chaotic scattering to the parameter dependence of the currents, in three types of Hamiltonian models, (i) with spatially periodic potentials where only in the driven scattering region, spatial and temporal symmetries are broken, and (ii), spatially asymmetric (ratchet) potentials with a driving that only breaks time-reversal invariance. As more realistic models of laser-irradiated surfaces, we consider (iii), a driving in the form of a running wave confined to a compact region by a static envelope. In this case, the induced current can even run against the direction of wave propagation, drastically evidencing its nonlinear nature. Quantizing punchets is indicated as a viable research perspective.

Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

Science.gov (United States)

Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

2012-04-15

A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

STATUS REPORT ON DEVELOPMENT OF A HIGH-SPEED HIGH-INTENSITY MOLECULAR BEAM

Energy Technology Data Exchange (ETDEWEB)

Knuth, Eldon L.

1963-07-15

Status of a high-speed high-intensity molecular beam under development is described. Bases for designs of the several components are presented. Using an arc-heated source and a hypersonic jet, molecular energies exceeding 1 ev and beam intensities of the order of 10/sup 16/ molecules/ cm/sup 2/ sec are anticipated. A two-disk beam chopper and speed selector provides a means for analyzing the speed distribution in the generated beam, for chopping the beam into bursts of nearly monoenergetic molecules suitable for scattering studies using the time-of-flight technique, and for modulating the beam in order to facilitate detection. A through-flow ionization detector possesses the versatility required for scattering studies using the time-of-flight technique. A sorption pump and a turbo pump serve as central components of alternative pumping systems for the collimating chamber. Using the arc-heated source, the converging nozzle, the conduction-radiation-cooled skimmer, the turbo pump (turning at 3400 rpm), the chopperselector (acting only as a chopper), and the detector, an arc-heated beam is generated and detected. (auth)

Diode-pumped laser amplifiers: application to 0.946 {mu}m Nd:YAG

Energy Technology Data Exchange (ETDEWEB)

Barnes, Norman P [NASA Langley Research Center, Hampton, VA 23681 (United States); Axenson, Theresa J [Science and Technology Corporation, 10 Basil Sawyer Drive, Hampton, VA 23666 (United States); Jr, Donald J Reichle [NASA Langley Research Center, Hampton, VA 23681 (United States); Walsh, Brian M [NASA Langley Research Center, Hampton, VA 23681 (United States)

2003-03-14

A diode-pumped laser amplifier model is derived from first principles and applied to a Nd:YAG amplifier operating on the {sup 4}F{sub 3/2} to {sup 4}I{sub 9/2} transition at 0.946 {mu}m. The effects of amplified spontaneous emission are included in the model and the addition of this effect is shown to produce better agreement with the data. The amplifier model includes effects of the transverse and longitudinal variation of the pump beam, transverse and longitudinal variation of the probe beam, and multiple passes of the probe beam. Experimental results obtained with a quasi four-level Nd:YAG amplifier operating at 0.946 {mu}m are used to validate the model. The amplifier was evaluated as a function of the pump energy, the probe energy, the probe beam radius, the pulse repetition frequency and the temperature. For all of the experimental conditions, the experimental results and the model agree.

A 25kW fiber-coupled diode laser for pumping applications

Science.gov (United States)

Malchus, Joerg; Krause, Volker; Koesters, Arnd; Matthews, David G.

2014-03-01

In this paper we report the development of a new fiber-coupled diode laser for pumping applications capable of generating 25 kW with four wavelengths. The delivery fiber has 2.0 mm core diameter and 0.22 NA resulting in a Beam Parameter Product (BPP) of 220 mm mrad. To achieve the specifications mentioned above a novel beam transformation technique has been developed combining two high power laser stacks in one common module. After fast axis collimation and beam reformatting a beam with a BPP of 200 mm mrad x 40 mm mrad in the slow and fast-axis is generated. Based on this architecture a customer-specific pump laser with 25 kW optical output power has been developed, in which two modules are polarization multiplexed for each wavelength (980nm, 1020nm, 1040m and 1060nm). After slow-axis collimation these wavelengths are combined using dense wavelength coupling before focusing onto the fiber endface. This new laser is based on a turn-key platform, allowing straight-forward integration into any pump application. The complete system has a footprint of less than 1.4m² and a height of less than 1.8m. The laser diodes are water cooled, achieve a wall-plug efficiency of up to 60%, and have a proven lifetime of <30,000 hours. The new beam transformation techniques open up prospects for the development of pump sources with more than 100kW of optical output power.

A circuit scheme to control current surge for RFID-NVM pumps

Energy Technology Data Exchange (ETDEWEB)

Li Ming; Kang Jinfeng; Wang Yangyuan [Institute of Microelectronics, Peking University, Beijing 100871 (China); Yang Liwu, E-mail: prettynecess@163.co [Semiconductor Manufacturing International Corporation, Shanghai 201203 (China)

2010-02-15

This paper presents a new circuit scheme to control the current surge in the boosting phase of an radio frequency idenfication-nonvolative memory pump. By introducing a circuit block consisting of a current reference and a current mirror, the new circuit scheme can keep the period-average current of the pump constantly below the desired level, for example, 2.5 {mu}A. Therefore, it can prevent the rectified supply of the RFID tag IC from collapsing in the boosting phase of the pump. The presented scheme could effectively reduce the voltage drop on the rectified supply from more than 50% to even zero, but could cost less area. Moreover, an analytical expression to calculate the boosting time of a pump in the new scheme is developed. (semiconductor integrated circuits)

A circuit scheme to control current surge for RFID-NVM pumps

International Nuclear Information System (INIS)

Li Ming; Kang Jinfeng; Wang Yangyuan; Yang Liwu

2010-01-01

This paper presents a new circuit scheme to control the current surge in the boosting phase of an radio frequency idenfication-nonvolative memory pump. By introducing a circuit block consisting of a current reference and a current mirror, the new circuit scheme can keep the period-average current of the pump constantly below the desired level, for example, 2.5 μA. Therefore, it can prevent the rectified supply of the RFID tag IC from collapsing in the boosting phase of the pump. The presented scheme could effectively reduce the voltage drop on the rectified supply from more than 50% to even zero, but could cost less area. Moreover, an analytical expression to calculate the boosting time of a pump in the new scheme is developed. (semiconductor integrated circuits)

Scaling behavior of the spin pumping effect in conductive ferromagnet/platinum bilayers

Energy Technology Data Exchange (ETDEWEB)

Czeschka, Franz D.; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas; Brandt, Martin S. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Imort, Inga-Mareen; Reiss, Guenter; Thomas, Andy [Fakultaet fuer Physik, Universitaet Bielefeld (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm (Germany)

2011-07-01

Spin pumping experiments allow to measure spin currents or the spin Hall angle. We have systematically studied the spin pumping DC voltage occurring in conjunction with ferromagnetic resonance in a series of conductive ferromagnet/platinum bilayers, made from elemental 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors. In all bilayers, we invariably observe the same DC voltage polarity. Moreover, we find that the voltage magnitude scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism, and the charge carrier type in a given ferromagnet. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect, and establish spin pumping as a generic phenomenon.

Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

Science.gov (United States)

Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

2018-05-01

We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

DEFF Research Database (Denmark)

Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

2009-01-01

In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

Science.gov (United States)

Czeschka, F. D.; Dreher, L.; Brandt, M. S.; Weiler, M.; Althammer, M.; Imort, I.-M.; Reiss, G.; Thomas, A.; Schoch, W.; Limmer, W.; Huebl, H.; Gross, R.; Goennenwein, S. T. B.

2011-07-01

We systematically measured the dc voltage VISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, VISH invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

Flow tube used to cool solar-pumped laser

Science.gov (United States)

1968-01-01

A flow tube has been designed and constructed to provide two major functions in the application of a laser beam for transmission of both sound and video. It maintains the YAG laser at the proper operating temperature of 300 degrees K under solar pumping conditions, and it serves as a pump cavity for the laser crystal.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

Science.gov (United States)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

Efficient Ho:YLF laser pumped by a Tm:fiber laser

CSIR Research Space (South Africa)

Koen, W

2013-10-01

Full Text Available A thulium fiber laser pumped Ho:YLF laser delivering 45.1 W in a near diffraction limited beam when pumped with 84.7 W is demonstrated. The optical-to-optical efficiency of 53 % compares favorably with similar Ho:YAG lasers....

Multiphoton microscopy in every lab: the promise of ultrafast semiconductor disk lasers

Science.gov (United States)

Emaury, Florian; Voigt, Fabian F.; Bethge, Philipp; Waldburger, Dominik; Link, Sandro M.; Carta, Stefano; van der Bourg, Alexander; Helmchen, Fritjof; Keller, Ursula

2017-07-01

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

High brightness diode-pumped organic solid-state laser

Energy Technology Data Exchange (ETDEWEB)

Zhao, Zhuang; Mhibik, Oussama; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien, E-mail: sebastien.forget@univ-paris13.fr [Université Paris 13, Sorbonne Paris Cité, Laboratoire de Physique des Lasers, F-93430, Villetaneuse (France); CNRS, UMR 7538, LPL, F-93430, Villetaneuse (France)

2015-02-02

High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

Seven-laser diode end-pumped Nd

International Nuclear Information System (INIS)

Berger, J.; Welch, D.F.; Streifer, W.; Scifres, D.R.; Smith, J.J.; Hoffman, H.J.; Peisley, D.; Radecki, D.

1988-01-01

End pumping of solid-state lasers by single semiconductor laser diode arrays (LDAs) is efficient, but the maximum pump power is limited by the source brightness and matching the TEM/sub 00/ Nd:YAG cavity mode. To increase the output power from a solid-state Nd:YAG laser, one option is to employ a multiplicity of LDA to provide more pump power than is available from a single source. The authors report herein a 660-mW cw TEM/sub 00/ Nd:YAG laser, end-pumped by seven LDA, with bundled optical fibers coupling the light from each diode to the Nd:YAG rod end. The maximum electrical-to-optical conversion efficiency attained was 4.7% at 560-mW Nd:YAG output power. The LDAs (SDL-2430-C, 100 μm wide) were mounted on separate thermoelectric coolers to tune emission wavelength to the Nd:YAG absorption bands. The diodes were operated at their rated output power (50,000 h mean time to failure). The 110/125-μm diam 0.37-N.A. fibers were butt coupled to the lasers and glued together into a hexagonal close pack. The authors have obtained the highest average power demonstrated to date in the TEM/sub 00/ mode from a Nd:YAG laser, reliably end-pumped by multiple laser diodes with good efficiency

Single-mode Brillouin fiber laser passively stabilized at resonance frequency with self-injection locked pump laser

International Nuclear Information System (INIS)

Spirin, V V; Lopez-Mercado, C A; Megret, P; Fotiadi, A A

2012-01-01

We demonstrate a single-mode Brillouin fiber ring laser, which is passively stabilized at pump resonance frequency by using self-injection locking of semiconductor pump laser. Resonance condition for Stokes radiation is achieved by length fitting of Brillouin laser cavity. The laser generate single-frequency Stokes wave with linewidth less than 0.5 kHz using approximately 17-m length cavity

Comparison on electrically pumped random laser actions of hydrothermal and sputtered ZnO films

International Nuclear Information System (INIS)

Wang, Canxing; Jiang, Haotian; Li, Yunpeng; Ma, Xiangyang; Yang, Deren

2013-01-01

Random lasing (RL) in polycrystalline ZnO films is an intriguing research subject. Here, we have comparatively investigated electrically pumped RL behaviors of two metal-insulator-semiconductor structured devices using the hydrothermal and sputtered ZnO films as the semiconductor components, i.e., the light-emitting layers, respectively. It is demonstrated that the device using the hydrothermal ZnO film exhibits smaller threshold current and larger output optical power of the electrically pumped RL. The morphological characterization shows that the hydrothermal ZnO film is somewhat porous and is much rougher than the sputtered one, suggesting that in the former stronger multiple light scattering can occur. Moreover, the photoluminescence characterization indicates that there are fewer defects in the hydrothermal ZnO film than in the sputtered one, which means that the photons can pick up larger optical gain through stimulated emission in the hydrothermal ZnO film. Therefore, it is believed that the stronger multiple light scattering and larger optical gain contribute to the improved performance of the electrically pumped RL from the device using the hydrothermal ZnO film

Continuous-wave lasing in an organic-inorganic lead halide perovskite semiconductor

Science.gov (United States)

Jia, Yufei; Kerner, Ross A.; Grede, Alex J.; Rand, Barry P.; Giebink, Noel C.

2017-12-01

Hybrid organic-inorganic perovskites have emerged as promising gain media for tunable, solution-processed semiconductor lasers. However, continuous-wave operation has not been achieved so far1-3. Here, we demonstrate that optically pumped continuous-wave lasing can be sustained above threshold excitation intensities of 17 kW cm-2 for over an hour in methylammonium lead iodide (MAPbI3) distributed feedback lasers that are maintained below the MAPbI3 tetragonal-to-orthorhombic phase transition temperature of T ≈ 160 K. In contrast with the lasing death phenomenon that occurs for pure tetragonal-phase MAPbI3 at T > 160 K (ref. 4), we find that continuous-wave gain becomes possible at T ≈ 100 K from tetragonal-phase inclusions that are photogenerated by the pump within the normally existing, larger-bandgap orthorhombic host matrix. In this mixed-phase system, the tetragonal inclusions function as carrier recombination sinks that reduce the transparency threshold, in loose analogy to inorganic semiconductor quantum wells, and may serve as a model for engineering improved perovskite gain media.

Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

Science.gov (United States)

Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

2012-08-28

Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis.

A dual-optically-pumped polarized negative deuterium ion source

International Nuclear Information System (INIS)

Kinsho, M.; Mori, Y.; Ikegami, K.; Takagi, A.

1994-01-01

An optically pumped polarized H - source (OPPIS), which is based on the charge exchange between H + ions and electron-spin-polarized alkali atoms has been developed at KEK. Just by applying this scheme to a deuteron beam, it is difficult to obtain a highly vector polarized deuteron beam. To obtain highly vector polarized D - ions, we have developed a 'dual optical pumping type' of polarized D - source. With this scheme, a 100% vector nuclear-spin polarization for D - ions is possible in principle. In a preliminary experiment, a 60% of vector nuclear-spin polarized D - ions was obtained. (author)

Optimizations of spin-exchange relaxation-free magnetometer based on potassium and rubidium hybrid optical pumping

International Nuclear Information System (INIS)

Fang, Jiancheng; Wang, Tao; Li, Yang; Zhang, Hong; Zou, Sheng

2014-01-01

The hybrid optical pumping atomic magnetometers have not realized its theoretical sensitivity, the optimization is critical for optimal performance. The optimizations proposed in this paper are suitable for hybrid optical pumping atomic magnetometer, which contains two alkali species. To optimize the parameters, the dynamic equations of spin evolution with two alkali species were solved, whose steady-state solution is used to optimize the parameters. The demand of the power of the pump beam is large for hybrid optical pumping. Moreover, the sensitivity of the hybrid optical pumping magnetometer increases with the increase of the power density of the pump beam. The density ratio between the two alkali species is especially important for hybrid optical pumping magnetometer. A simple expression for optimizing the density ratio is proposed in this paper, which can help to determine the mole faction of the alkali atoms in fabricating the hybrid cell before the cell is sealed. The spin-exchange rate between the two alkali species is proportional to the saturated density of the alkali vapor, which is highly dependent on the temperature of the cell. Consequently, the sensitivity of the hybrid optical pumping magnetometer is dependent on the temperature of the cell. We proposed the thermal optimization of the hybrid cell for a hybrid optical pumping magnetometer, which can improve the sensitivity especially when the power of the pump beam is low. With these optimizations, a sensitivity of approximately 5 fT/Hz 1/2 is achieved with gradiometer arrangement

Transfer of temporal fluctuations in photorefractive two-beam coupling

DEFF Research Database (Denmark)

Juul Jensen, S.; Saffman, M.

1997-01-01

Transfer of temporal fluctuations between the signal and pump beams in diffusion dominated photorefractive two-beam coupling is studied experimentally. The dependence on the gain, beam intensity ratio, and frequency of the fluctuations is found to agree well with a linearized analysis, The transf...... of perturbations is frequency dependent at low frequencies, and becomes constant at frequencies large compared to the inverse material time constant. Vde discuss the possibility of pump noise suppression when amplifying weak signals. (C) 1997 American Institute of Physics....

Ultra high vacuum system of the 3 MeV electron beam accelerator

International Nuclear Information System (INIS)

Puthran, G.P.; Jayaprakash, D.; Mishra, R.L.; Ghodke, S.R.; Majumder, R.; Mittal, K.C.; Sethi, R.C.

2003-01-01

Full text: A 3 MeV electron beam accelerator is coming up at the electron beam centre, Kharghar, Navi Mumbai. A vacuum of the order of 1x10 -7 mbar is desired in the beam line of the accelerator. The UHV system is spread over a height of 6 meters. The total surface area exposed to vacuum is 65,000 cm 2 and the volume is 200 litres. Distributed pumping is planned, to avoid undesirable vacuum gradient between any two sections of the beam-line. The electron beam is scanned in an area of 6 cms x 100 cms and it comes out of the scan-horn through a titanium foil of 50 micron thick. Hence the vacuum system is designed in such a way that, in the event of foil rupture during beam extraction, the electron gun, accelerating column and the pumps can be protected from sudden air rush. The vacuum in the beam-line can also be maintained in this condition. After changing the foil, scan-horn area can be separately pumped to bring the vacuum level as desired and can be opened to the beam-line. The design, vacuum pumping scheme and the safety aspects are discussed in this paper

Semiconductor optoelectronic infrared spectroscopy

International Nuclear Information System (INIS)

Hollingworth, A.R.

2001-08-01

We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

Terahertz Focusing and Polarization Control in Large-Area Bias-Free Semiconductor Emitters

Science.gov (United States)

Carthy, Joanna L.; Gow, Paul C.; Berry, Sam A.; Mills, Ben; Apostolopoulos, Vasilis

2018-03-01

We show that, when large-area multiplex terahertz semiconductor emitters, that work on diffusion currents and Schottky potentials, are illuminated by ultrashort optical pulses they can radiate a directional electromagnetic terahertz pulse which is controlled by the angular spectrum of the incident optical beam. Using the lens that focuses the incident near-infrared pulse, we have demonstrated THz emission focusing in free space, at the same point where the optical radiation would focus. We investigated the beam waist and Gouy phase shift of the THz emission as a function of frequency. We also show that the polarization profile of the emitted THz can be tailored by the metallic patterning on the semiconductor, demonstrating radial polarization when a circular emitter design is used. Our techniques can be used for fast THz beam steering and mode control for efficiently coupling to waveguides without the need for THz lenses or parabolic mirrors.

Semiconductor Nonlinear Dynamics Study by Broadband Terahertz Spectroscopy

Science.gov (United States)

Ho, I.-Chen

Semiconductor nonlinearity in the terahertz (THz) frequency range has been attracting considerable attention due to the recent development of high-power semiconductor-based nanodevices. However, the underlying physics concerning carrier dynamics in the presence of high-field THz transients is still obscure. This thesis introduces an ultrafast, time-resolved THz pump/THz probe approach to the study of semiconductor properties in the nonlinear regime. The carrier dynamics regarding two mechanisms, intervalley scattering and impact ionization, is observed for doped InAs on a sub-picosecond time scale. In addition, polaron modulation driven by intense THz pulses is experimentally and theoretically investigated. The observed polaron dynamics verifies the interaction between energetic electrons and a phonon field. In contrast to previous work which reports optical phonon responses, acoustic phonon modulations are addressed in this study. A further understanding of the intense field interacting with solid materials will accelerate the development of semiconductor devices. This thesis starts with the design and performance of a table-top THz spectrometer which has the advantages of ultra-broad bandwidth (one order higher bandwidth compared to a conventional ZnTe sensor) and high electric field strength (>100 kV/cm). Unlike the conventional THz time-domain spectroscopy, the spectrometer integrates a novel THz air-biased-coherent-detection (THz-ABCD) technique and utilizes selected gases as THz emitters and sensors. In comparison with commonly used electro-optic (EO) crystals or photoconductive (PC) dipole antennas, the gases have the benefits of no phonon absorption as existing in EO crystals and no carrier life time limitation as observed in PC dipole antennas. The newly development THz-ABCD spectrometer with a strong THz field strength capability provides a platform for various research topics especially on the nonlinear carrier dynamics of semiconductors. Two mechanisms

Mutually incoherent beam combining through optical parametric amplification

International Nuclear Information System (INIS)

Tropheme, B.

2012-01-01

This work deals with a technique of combination of coherent beams: Optical Parametric Amplification (OPA) with Multiple Pumps. This technique is used to instantly transfer the energy of several pumps on one beam, without energy storage and thus avoiding thermal effects in the amplifying media. It can be useful to combine energy of numerous fiber lasers and to amplify with a high repetition rate very high energy lasers or broadband pulses. With a numerical and experimental study using BBO and LBO as nonlinear crystal, we determine how to dispose the pumps around the signal and the corresponding angular tolerances of such set up. Then we focus our attention on recombining mechanisms between a pump and a non-corresponding idler. We demonstrate experimentally that these cascading effects may decrease the spatial and spectral quality of the amplified signal, and that these phenomena can be avoided with a minimum angle between the different pumps. A novel modelling of multi-pumps OPA links these cascading effects to the gratings generated by the interaction between the pumps. The last part presents a 5 pump OPA experiment. We achieve a pump-to-signal efficiency of 27% and so that a signal more powerful than each pump is obtained. (author) [fr

Radiation effects on semiconductor devices in high energy heavy ion accelerators

Energy Technology Data Exchange (ETDEWEB)

Belousov, Anton

2014-10-20

Radiation effects on semiconductor devices in GSI Helmholtz Center for Heavy Ion Research are becoming more and more significant with the increase of beam intensity due to upgrades. Moreover a new accelerator is being constructed on the basis of GSI within the project of facility for antiproton and ion research (FAIR). Beam intensities will be increased by factor of 100 and energies by factor of 10. Radiation fields in the vicinity of beam lines will increase more than 2 orders of magnitude and so will the effects on semiconductor devices. It is necessary to carry out a study of radiation effects on semiconductor devices considering specific properties of radiation typical for high energy heavy ion accelerators. Radiation effects on electronics in accelerator environment may be divided into two categories: short-term temporary effects and long-term permanent degradation. Both may become critical for proper operation of some electronic devices. This study is focused on radiation damage to CCD cameras in radiation environment of heavy ion accelerator. Series of experiments with irradiation of devices under test (DUTs) by secondary particles produced during ion beam losses were done for this study. Monte Carlo calculations were performed to simulate the experiment conditions and conditions expected in future accelerator. Corresponding comparisons and conclusions were done. Another device typical for accelerator facilities - industrial Ethernet switch was tested in similar conditions during this study. Series of direct irradiations of CCD and MOS transistors with heavy ion beams were done as well. Typical energies of the primary ion beams were 0.5-1 GeV/u. Ion species: from Na to U. Intensities of the beam up to 10{sup 9} ions/spill with spill length of 200-300 ns. Criteria of reliability and lifetime of DUTs in specific radiation conditions were formulated, basing on experimental results of the study. Predictions of electronic device reliability and lifetime were

Laser interferometric method for determining the carrier diffusion length in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Manukhov, V. V. [Saint Petersburg State University (Russian Federation); Fedortsov, A. B.; Ivanov, A. S., E-mail: ivaleks58@gmail.com [Saint Petersburg Mining University (Russian Federation)

2015-09-15

A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

Using NEG-pumping near a high density internal target

Energy Technology Data Exchange (ETDEWEB)

Gruber, Alexander; Marton, Johann; Widmann, Eberhard; Zmeskal, Johann [Stefan Meyer Institut fuer Subatomare Physik, OeAW (Germany); Orth, Herbert [GSI, Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany)

2009-07-01

The universal detector PANDA will be constructed at the future high-energy antiproton storage ring HESR at FAIR (Facility for Antiproton and Ion Research, GSI/Darmstadt). It will use antiproton beams (1.5 to 15 GeV/c) for hadron physics in the charmonium region. The Stefan Meyer Institut (SMI) contributes to major parts of the PANDA detector like the hydrogen cluster-jet target and the vacuum system of the antiproton - target interaction zone. To ensure low background, the residual gas load in the interaction zone and in the antiproton beam-pipe has to be minimised. Most of the gas load will come from the high density internal hydrogen target. As the detector will cover almost the full solid angle, the installation of pumps near the interaction zone is impossible. Therefore the use of NEG (non-evaporative-getter) coated beam pipes has been considered as an alternative. Two setups with NEG coated tubes have been installed at SMI as prototypes of the PANDA interaction zone. General parameters of the NEG-film, its outgassing behaviour, the pumping speed and the pumping capacity for hydrogen have been tested. The results of the studies on the PANDA-interaction region are presented.

Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser

Science.gov (United States)

Ellis, Bryan; Mayer, Marie A.; Shambat, Gary; Sarmiento, Tomas; Harris, James; Haller, Eugene E.; Vučković, Jelena

2011-05-01

Efficient, low-threshold and compact semiconductor laser sources are under investigation for many applications in high-speed communications, information processing and optical interconnects. The best edge-emitting and vertical-cavity surface-emitting lasers have thresholds on the order of 100 µA (refs 1,2), but dissipate too much power to be practical for many applications, particularly optical interconnects. Optically pumped photonic-crystal nanocavity lasers represent the state of the art in low-threshold lasers; however, to be practical, techniques to electrically pump these structures must be developed. Here, we demonstrate a quantum-dot photonic-crystal nanocavity laser in gallium arsenide pumped by a lateral p-i-n junction formed by ion implantation. Continuous-wave lasing is observed at temperatures up to 150 K. Thresholds of only 181 nA at 50 K and 287 nA at 150 K are observed--the lowest thresholds ever observed in any type of electrically pumped laser.

Optically pumped electron spin polarized targets for use in the production of polarized ion beams

International Nuclear Information System (INIS)

Anderson, L.W.

1979-01-01

The production of relatively dense electron spin polarized alkali metal vapor targets by optical pumping with intense cw dye lasers is discussed. The target density and electron spin polarization depend on the dye laser intensity and bandwidth, the magnetic field at the target, and the electron spin depolarization time. For example in a magnetic field of 1.5 x 10 3 G, and using 1 W dye laser with a bandwidth of 10 10 Hz one can construct an electron spin polarized Na vapor target with a target thickness of 1.6 x 10 13 atoms/cm 2 and an average electron spin polarization of about 90% even though the Na atoms are completely depolarized at every wall collision. Possible uses of the electron spin polarized targets for the production of intense beams of polarized H - or 3 He - ions are discussed. (orig.)

Semiconductor

International Nuclear Information System (INIS)

2000-01-01

This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

A simple equilibrium theoretical model and predictions for a continuous wave exciplex pumped alkali laser

International Nuclear Information System (INIS)

Carroll, David L; Verdeyen, Joseph T

2013-01-01

The exciplex pumped alkali laser (XPAL) system has been demonstrated in mixtures of Cs vapour, Ar, with and without ethane, by pumping Cs-Ar atomic collision pairs and subsequent dissociation of diatomic, electronically excited CsAr molecules (exciplexes or excimers). The blue satellites of the alkali D 2 lines provide an advantageous pathway for optically pumping atomic alkali lasers on the principal series (resonance) transitions with broad linewidth (>2 nm) semiconductor diode lasers. The development of a simple theoretical analysis of continuous-wave XPAL systems is presented along with predictions as a function of temperature and pump intensity. The model predicts that an optical-to-optical efficiency in the range of 40-50% can be achieved for XPAL.

Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

International Nuclear Information System (INIS)

Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

1999-01-01

The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

Polarised two-photon excitation of quantum well excitons for manipulation of optically pumped terahertz lasers

Energy Technology Data Exchange (ETDEWEB)

Slavcheva, G., E-mail: gsk23@bath.ac.uk [Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2AZ (United Kingdom); Kavokin, A.V., E-mail: A.Kavokin@soton.ac.uk [School of Physics and Astronomy, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Spin Optics Laboratory, St. Petersburg State University, 1, Ulyanovskaya 198504 (Russian Federation)

2014-11-15

Optical pumping of excited exciton states in a semiconductor quantum well embedded in a microcavity is a tool for realisation of ultra-compact terahertz (THz) lasers based on stimulated optical transition between excited (2p) and ground (1s) exciton state. We show that the probability of two-photon absorption by a 2p-exciton is strongly dependent on the polarisation of both pumping photons. Five-fold variation of the threshold power for terahertz lasing by switching from circular to co-linear pumping is predicted. We identify photon polarisation configurations for achieving maximum THz photon generation quantum efficiency.

Metal/oxide/semiconductor interface investigated by monoenergetic positrons

Science.gov (United States)

Uedono, A.; Tanigawa, S.; Ohji, Y.

1988-10-01

Variable-energy positron-beam studies have been carried out for the first time on a metal/oxide/semiconductor (MOS) structure of polycrystalline Si/SiO 2/Si-substrate. We were successful in collecting injected positrons at the SiO 2/Si interface by the application of an electric field between the MOS electrodes.

Fault localization and analysis in semiconductor devices with optical-feedback infrared confocal microscopy

International Nuclear Information System (INIS)

Sarmiento, Raymund; Cemine, Vernon Julius; Tagaca, Imee Rose; Salvador, Arnel; Mar Blanca, Carlo; Saloma, Caesar

2007-01-01

We report on a cost-effective optical setup for characterizing light-emitting semiconductor devices with optical-feedback confocal infrared microscopy and optical beam-induced resistance change.We utilize the focused beam from an infrared laser diode to induce local thermal resistance changes across the surface of a biased integrated circuit (IC) sample. Variations in the multiple current paths are mapped by scanning the IC across the focused beam. The high-contrast current maps allow accurate differentiation of the functional and defective sites, or the isolation of the surface-emittingp-i-n devices in the IC. Optical beam-induced current (OBIC) is not generated since the incident beam energy is lower than the bandgap energy of the p-i-n device. Inhomogeneous current distributions in the IC become apparent without the strong OBIC background. They are located at a diffraction-limited resolution by referencing the current maps against the confocal reflectance image that is simultaneously acquired via optical-feedback detection. Our technique permits the accurate identification of metal and semiconductor sites as well as the classification of different metallic structures according to thickness, composition, or spatial inhomogeneity

Passively mode-locked high power Nd:GdVO4 laser with direct in-band pumping at 912 nm

Science.gov (United States)

Nadimi, Mohammad; Waritanant, Tanant; Major, Arkady

2018-01-01

We report on the first semiconductor saturable absorber mirror mode-locked Nd:GdVO4 laser directly diode-pumped at 912 nm. The laser generated 10.14 W of averaged output power at 1063 nm with the pulse width of 16 ps at the repetition rate of 85.2 MHz. The optical-to-optical efficiency and slope efficiency in the mode-locked regime were calculated to be 49.6% and 67.4% with respect to the absorbed pump power, respectively. Due to the low quantum defect pumping the output power was limited only by the available pump power.

Pump induced normal mode splittings in phase conjugation in a Kerr ...

Indian Academy of Sciences (India)

Abstract. Phase conjugation in a Kerr nonlinear waveguide is studied with counter-propagating normally incident pumps and a probe beam at an arbitrary angle of incidence. Detailed numerical results for the specular and phase conjugated reflectivities are obtained with full account of pump depletion. For sufficient ...

Compact electron accelerator for pumping gas lasers

International Nuclear Information System (INIS)

Duncan, C.V.; Bradley, L.P.

1976-01-01

A description is given of the design and application of a simple e-beam generator for the repetitive pulse pumping of gas lasers. The circuit uses a low inductance Marx and series tuned pulse forming elements

Diagram representations of charge pumping processes in CMOS transistors

International Nuclear Information System (INIS)

Huang Xinyun; Jiao Guangfan; Cao Wei; Huang Darning; Li Mingfu; Shen Chen

2010-01-01

A diagram representation method is proposed to interpret the complicated charge pumping (CP) processes. The fast and slow traps in CP measurement are defined. Some phenomena such as CP pulse rise/fall time dependence, frequency dependence, the voltage dependence for the fast and slow traps, and the geometric CP component are clearly illustrated at a glance by the diagram representation. For the slow trap CP measurement, there is a transition stage and a steady stage due to the asymmetry of the electron and hole capture, and the CP current is determined by the lower capturing electron or hole component. The method is used to discuss the legitimacy of the newly developed modified charge pumping method. (semiconductor devices)

Semiconductor Laser Tracking Frequency Distance Gauge

Science.gov (United States)

Phillips, James D.; Reasenberg, Robert D.

2009-01-01

Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

International Nuclear Information System (INIS)

Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

2009-01-01

A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

Advanced solar energy conversion. [solar pumped gas lasers

Science.gov (United States)

Lee, J. H.

1981-01-01

An atomic iodine laser, a candidate for the direct solar pumped lasers, was successfully excited with a 4 kW beam from a xenon arc solar simulator, thus proving the feasibility of the concept. The experimental set up and the laser output as functions of operating conditions are presented. The preliminary results of the iodine laser amplifier pumped with the HCP array to which a Q switch for giant pulse production was coupled are included. Two invention disclosures - a laser driven magnetohydrodynamic generator for conversion of laser energy to electricity and solar pumped gas lasers - are also included.

SPICE analysis of the charge division in resistive semiconductor nanowire diodes

International Nuclear Information System (INIS)

Guardiola, C; Money, K; Carabe, A

2014-01-01

In this paper we present an analysis of the charge division method in semiconductor nanowire Schottky diodes using an electrical model based on the SPICE simulation code. A semiconductor nanowire prototype that is simulated as an RC network and two readout electronic systems are modelled in order to understand its behaviour and to assess its application as a possible ionizing particle detector in clinical high-LET particle beams. We study the use of resistive charge division along the semiconductor nanowire to calculate the position of deposited charge generated by an ionizing particle as it crosses the nanodevice and to determine the minimal viable spatial resolution. Our aim is to demonstrate the charge division concept in resistive semiconductor nanowire diodes, and to subsequently understand the performance of these nanodevices as radiation sensors and address the design limitations of such an application

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

Science.gov (United States)

Yan, Jie-Yun

2018-06-01

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

Beat-wave generation of plasmons in semiconductor plasmas

International Nuclear Information System (INIS)

Berezhiani, V.I.; Mahajan, S.M.

1995-08-01

It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap seimconductors (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas

Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

International Nuclear Information System (INIS)

Kozlov, V.A.; Kozlovski, V.V.

2001-01-01

One of the modern methods for modifying semiconductors using beams of protons and alpha particles is analyzed; this modification is accomplished by the controlled introduction of radiation defects into the semiconductor. It is shown that doping semiconductors with radiation defects produced by irradiation with light ions opens up fresh opportunities for controlling the properties of semiconducting materials and for the development of new devices designed for optoelectronics, microelectronics, and nanoelectronics based on these materials; these devices differ favorably from those obtained by conventional doping methods, i.e., by diffusion, epitaxy, and ion implantation

Bistable direction switching in an off-axis pumped continuous wave ruby laser

Science.gov (United States)

Afzal, R. Sohrab; Lawandy, N. M.

1988-01-01

A report is presented of the observation of hysteretic bistable direction switching in a single-mode CW ruby laser system. This effect is only observed when the pump beam which is focused into the ruby rod is misaligned with respect to the rod end faces. At low pump powers, the ruby lases in a mode nearly collinear with the pump axis. At a higher pump power the ruby switches to a mode that is collinear with the rod end faces and preserves the original polarization. The effect is large enough to switch the beam by an angle equal to twice the diffraction angle. The observations show that under steady-state pumping, a CW ruby laser can exhibit bistable operation in its output direction and power. A calculation using the heat equation with two concentric cylinders with one as a heat source (pump laser) and the outer wall of the other held at 77 K, gives an increase in core temperature of about 0.01 K. Therefore, the increase in temperature is not large enough to change the index of refraction to account for such large macroscopic effects.

MCNPX calculations for electron irradiated semiconductor detectors

International Nuclear Information System (INIS)

Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

2014-01-01

This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

A specialized bioengineering ion beam line

International Nuclear Information System (INIS)

Yu, L.D.; Sangyuenyongpipat, S.; Sriprom, C.; Thongleurm, C.; Suwanksum, R.; Tondee, N.; Prakrajang, K.; Vilaithong, T.; Brown, I.G.; Wiedemann, H.

2007-01-01

A specialized bioengineering ion beam line has recently been completed at Chiang Mai University to meet rapidly growing needs of research and application development in low-energy ion beam biotechnology. This beam line possesses special features: vertical main beam line, low-energy (30 keV) ion beams, double swerve of the beam, a fast pumped target chamber, and an in-situ atomic force microscope (AFM) system chamber. The whole beam line is situated in a bioclean environment, occupying two stories. The quality of the ion beam has been studied. It has proved that this beam line has significantly contributed to our research work on low-energy ion beam biotechnology

Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

Science.gov (United States)

Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

2018-02-01

We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

Two-dimensional Semiconductor-Superconductor Hybrids

DEFF Research Database (Denmark)

Suominen, Henri Juhani

This thesis investigates hybrid two-dimensional semiconductor-superconductor (Sm-S) devices and presents a new material platform exhibiting intimate Sm-S coupling straight out of the box. Starting with the conventional approach, we investigate coupling superconductors to buried quantum well....... To overcome these issues we integrate the superconductor directly into the semiconducting material growth stack, depositing it in-situ in a molecular beam epitaxy system under high vacuum. We present a number of experiments on these hybrid heterostructures, demonstrating near unity interface transparency...

Beam induced vacuum measurement error in BEPC II

Institute of Scientific and Technical Information of China (English)

无

2011-01-01

When the beam in BEPCII storage ring aborts suddenly, the measured pressure of cold cathode gauges and ion pumps will drop suddenly and decrease to the base pressure gradually. This shows that there is a beam induced positive error in the pressure measurement during beam operation. The error is the difference between measured and real pressures. Right after the beam aborts, the error will disappear immediately and the measured pressure will then be equal to real pressure. For one gauge, we can fit a non-linear pressure-time curve with its measured pressure data 20 seconds after a sudden beam abortion. From this negative exponential decay pumping-down curve, real pressure at the time when the beam starts aborting is extrapolated. With the data of several sudden beam abortions we have got the errors of that gauge in different beam currents and found that the error is directly proportional to the beam current, as expected. And a linear data-fitting gives the proportion coefficient of the equation, which we derived to evaluate the real pressure all the time when the beam with varied currents is on.

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

International Nuclear Information System (INIS)

Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

2016-01-01

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Using NEG-pumping near a high density internal target

International Nuclear Information System (INIS)

Gruber, A.; Marton, J.; Widmann, E.; Zmeskal, J.; Orth, H.

2008-01-01

Full text: The Stefan Meyer Institut (SMI) is part of the international PANDA collaboration. The universal detector will be constructed at the future high-energy antiproton storage ring HESR at FAIR (Facility for Antiproton and Ion Research, GSI/Darmstadt). PANDA will use antiproton beams (1.5 to 15 GeV/c) for hadron physics in the charmonium region. SMI contributes to major parts of the PANDA detector like the hydrogen cluster-jet target and the vacuum system of the antiproton - target interaction zone. To ensure low background, the residual gas load in the interaction zone and in the antiproton beam-pipe has to be minimized. Most of the gas load, of course will come from the high density internal hydrogen target. Since the PANDA detector will cover almost the full solid angle, the installation of pumps near the interaction zone is impossible. Therefore, the use of NEG (non-evaporative-getter) coated beam pipes has been considered as an alternative. Two setups with NEG coated tubes have been installed at SMI as prototypes of the PANDA interaction zone. The outgassing behavior, the pumping speed and the pumping capacity for hydrogen have been tested. The status of the studies of the interaction region will be presented. (author)

Gain measurements on a prototype NIF/LMJ amplifier pump cavity

International Nuclear Information System (INIS)

Rotter, M.D.; McCracken, R.; Erlandson, A.; Guenet, M.

1996-12-01

We are currently developing large-aperture amplifiers for the National Ignition Facility (NIF) and Laser Megajoules (LMJ) lasers. These multisegment amplifiers are of the flashlamp-pumped, Nd:Glass qW and are designed to propagate a nominally 36 cm square beam. The apertures within a particular amplifier bundle are arranged in a four-high by two-wide configuration and utilize two side lamp arrays and a central flashlamp array for pumping. The configuration is very similar to that used in the Beamlet laser, a single-beam prototype for the NIF/LMJ lasers, which has four apertures arranged in a two- high by two-wide configuration

Imaging the motion of electrons in 2D semiconductor heterostructures

Science.gov (United States)

Dani, Keshav

Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

Energy Technology Data Exchange (ETDEWEB)

Lee, Jung-Chuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Huang, Leng-Wei [Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China); Hung, Dung-Shing, E-mail: dshung@mail.mcu.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Information and Telecommunications Engineering, Ming Chuan University, Taipei 111, Taiwan (China); Chiang, Tung-Han [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Huang, J. C. A., E-mail: jcahuang@mail.ncku.edu.tw [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liang, Jun-Zhi [Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Physics, Fu Jen Catholic University, Taipei 242, Taiwan (China); Lee, Shang-Fan, E-mail: leesf@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)

2014-02-03

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

International Nuclear Information System (INIS)

Lee, Jung-Chuan; Huang, Leng-Wei; Hung, Dung-Shing; Chiang, Tung-Han; Huang, J. C. A.; Liang, Jun-Zhi; Lee, Shang-Fan

2014-01-01

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered

Development of vacuum components for neutral beam injection applications

International Nuclear Information System (INIS)

Schwenterly, S.W.

1977-01-01

Neutral beam injectors and divertors for fusion devices require very high-speed pumping capabilities to remove cold gas and impurities from the beam and plasma drift regions. Cryopumping is one of the most favorable methods due to its freedom from contamination and relatively low capital cost. The theory of cryosorption pumping is summarized and contrasted with the process of cryocondensation. A variable-temperature cryostat for basic studies on small test cryosorption panels is described. Using results of these studies, a large sorption panel with an inlet area of 2 m 2 is being designed and fabricated. The design characteristics of this pump are discussed

Five second helium neutral beam injection using argon-frost cryopumping techniques

International Nuclear Information System (INIS)

Phillips, J.C.; Kellman, D.H.; Hong, R.; Kim, J.; Laughon, G.M.

1995-01-01

High power helium neutral beams for the heating of tokamak discharges can now be provided for 5 s by using argon cryopumping (of the helium gas) in the beamlines. The DIII-D neutral beam system has routinely provided up to 20 MW of deuterium neutral beam heating in support of experiments on the DIII-D tokamak. Operation of neutral beams with helium has historically presented a problem in that pulse lengths have been limited to 500 ms due to reliance solely on volume pumping of the helium gas. Helium is not condensed on the cryopanels. A system has now been installed to deposit a layer of argon frost on the DIII-D neutral beam cryopanels, between tokamak injection pulses. The layer serves to trap helium on the cryopanels providing sufficient pumping speed for 5 s helium beam extraction. The argon frosting hardware is now present on two of four DIII-D neutral beamlines, allowing injection of up to 6 MW of helium neutral beams per discharge, with pulse lengths of up to 5 s. The argon frosting system is described, along with experimental results demonstrating its effectiveness as a method of economically extending the capabilities of cryogenic pumping panels to allow multi-second helium neutral beam injection

Traveling-wave laser-produced-plasma energy source for photoionization laser pumping and lasers incorporating said

Science.gov (United States)

Sher, Mark H.; Macklin, John J.; Harris, Stephen E.

1989-09-26

A traveling-wave, laser-produced-plasma, energy source used to obtain single-pass gain saturation of a photoionization pumped laser. A cylindrical lens is used to focus a pump laser beam to a long line on a target. Grooves are cut in the target to present a surface near normal to the incident beam and to reduce the area, and hence increase the intensity and efficiency, of plasma formation.

Diode lasers optimized in brightness for fiber laser pumping

Science.gov (United States)

Kelemen, M.; Gilly, J.; Friedmann, P.; Hilzensauer, S.; Ogrodowski, L.; Kissel, H.; Biesenbach, J.

2018-02-01

In diode laser applications for fiber laser pumping and fiber-coupled direct diode laser systems high brightness becomes essential in the last years. Fiber coupled modules benefit from continuous improvements of high-power diode lasers on chip level regarding output power, efficiency and beam characteristics resulting in record highbrightness values and increased pump power. To gain high brightness not only output power must be increased, but also near field widths and far field angles have to be below a certain value for higher power levels because brightness is proportional to output power divided by beam quality. While fast axis far fields typically show a current independent behaviour, for broadarea lasers far-fields in the slow axis suffer from a strong current and temperature dependence, limiting the brightness and therefore their use in fibre coupled modules. These limitations can be overcome by carefully optimizing chip temperature, thermal lensing and lateral mode structure by epitaxial and lateral resonator designs and processing. We present our latest results for InGaAs/AlGaAs broad-area single emitters with resonator lengths of 4mm emitting at 976nm and illustrate the improvements in beam quality over the last years. By optimizing the diode laser design a record value of the brightness for broad-area lasers with 4mm resonator length of 126 MW/cm2sr has been demonstrated with a maximum wall-plug efficiency of more than 70%. From these design also pump modules based on 9 mini-bars consisting of 5 emitters each have been realized with 360W pump power.

Divertor pumping system with NBI cryopump for JT-60

International Nuclear Information System (INIS)

Akino, Noboru; Kuriyama, Masaaki; Ohga, Tokumichi; Seki, Hiroshi; Tanai, Yutaka

1998-08-01

The pumping system for JT-60 W-shape divertor with the NBI cryopump have been developed. The pumping speed achieved in the divertor region was 13-15 m 3 /s for deuterium gas with three units of the NBI cryopumps. In a simulation experiment of helium ash exhaust through the divertor, pumping of a mixed gas of helium and deuterium has been demonstrated using the NBI cryosorption pumps covered with an argon condensed layer. Control of neutral particle pressure in the divertor region became possible by having remodeled an aperture of the existing fast shutter, which is installed between the JT-60 vacuum vessel and NBI beam-line, to be regulated. (author)

Extracting hot carriers from photoexcited semiconductor nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiaoyang

2014-12-10

This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

Solar-Pumped TEM₀₀ Mode Nd:YAG laser.

Science.gov (United States)

Liang, Dawei; Almeida, Joana

2013-10-21

Here we show a significant advance in solar-pumped laser beam brightness by utilizing a 1.0 m diameter Fresnel lens and a 3 mm diameter Nd:YAG single-crystal rod. The incoming solar radiation is firstly focused by the Fresnel lens on a solar tracker. A large aspheric lens and a 2D-CPC concentrator are then combined to further compress the concentrated solar radiation along the thin laser rod within a V-shaped pumping cavity. 2.3 W cw TEM₀₀ (M² ≤ 1.1) solar laser power is finally produced, attaining 1.9 W laser beam brightness figure of merit, which is 6.6 times higher than the previous record. For multimode operation, 8.1 W cw laser power is produced, corresponding to 143% enhancement in collection efficiency.

Orientation of Ar(3P2) atoms by laser optical pumping

International Nuclear Information System (INIS)

Giberson, K.W.; Hart, M.W.; Hammond, M.S.; Dunning, F.B.; Walters, G.K.

1984-01-01

A beam of argon metastable atoms with a high degree of electron-spin polarization has been produced by optical pumping using an Oxazine 750 dye laser. The beam is suitable for the study of electron spin and orbital orientation dependences in a variety of collision processes

INTENSIFICATION OF HEAT TRANSFER FROM THE IC CHIP TO THE HEAT SINK THROUGH THE USE OF NANOFILM THERMOELECTRIC HEAT PUMP

Directory of Open Access Journals (Sweden)

T. A. Ismailov

2014-01-01

Full Text Available The article considers the to enhance the efficiency the thermoelectric heat pump by making the branches of semiconductor p- and n-type as nanofilms and creating conditions for the emergence of additional thermoeffect between the hot and cold junctions of dissimilar metals that will create a more efficient heat pumps with small dimensions.

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Energy Technology Data Exchange (ETDEWEB)

Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-05-09

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Efficient semiconductor multicycle terahertz pulse source

Science.gov (United States)

Nugraha, P. S.; Krizsán, G.; Polónyi, Gy; Mechler, M. I.; Hebling, J.; Tóth, Gy; Fülöp, J. A.

2018-05-01

Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons.

Compact, efficient diode-end-pumped Nd:GdVO4 slab continuous-wave 912-nm laser

International Nuclear Information System (INIS)

Liu Huan; Gong Ma-Li

2012-01-01

A fiber-coupled laser-diode (LD) end-pumped Nd:GdVO 4 slab continuous-wave (CW) 912-nm laser and an LD bar end-pumped Nd:GdVO 4 slab CW 912-nm laser are both demonstrated in this paper. Using the fiber-coupled LD of end-pumped type, a highest CW 912-nm laser output power of 10.17 W is obtained with a high optical-to-optical conversion efficiency of 24.6% and a slope efficiency of 34.5%. The measured M 2 factors of beam quality in x and y directions are 5.3 and 5.1, respectively. Besides, an LD bar of end-pumped type is used to realize CW 912-nm laser output, which has the advantages of compactness and low cost. When the pump power is 38.8 W, the output power is 8.87 W and the measured M 2 factors of beam quality in x and y directions are 16 and 1.31, respectively. In order to improve the beam quality of the 912-nm laser at x direction, a new quasi-concentric laser resonator will be designed, and an LD bar end-pumped Nd:GdVO 4 slab high-power CW 912-nm TEM 00 laser will be realized in the future. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Manipulation of a two-photon pump in superconductor - semiconductor heterostructures

Science.gov (United States)

Orth, Peter P.; Baireuther, Paul; Vekhter, Ilya; Schmalian, Joerg

2014-03-01

We investigate the photon statistics, entanglement and squeezing of a pn-junction sandwiched between two superconducting leads, and show that such an electrically-driven photon pump generates correlated and entangled pairs of photons. In particular, we demonstrate that the squeezing of the fluctuations in the quadrature amplitudes of the emitted light can be manipulated by changing the relative phase of the order parameters of the superconductors. This reveals how macroscopic coherence of the superconducting state can be used to tailor the properties of a two-photon state.

Effect of absorbed pump power on the quality of output beam from ...

Indian Academy of Sciences (India)

Monolithic laser; thermal lens; diode pumping; spherical aberration; M2 ... the thermal lens as a function of the absorbed pump power towards the degradation of .... abs r4 -•••. (6) where the first term a0 is a constant phase shift and its value is ...

The role of rare earths in narrow energy gap semiconductors

International Nuclear Information System (INIS)

Partin, D.L.; Heremans, J.; Morelli, D.T.; Thrush, C.M.

1991-01-01

Narrow energy band gap semiconductors are potentially useful for various devices, including infrared detectors and diode lasers. Rare earth elements have been introduced into lead chalcogenide semiconductors using the molecular beam epitaxy growth process. Europium and ytterbium increase the energy band gap, and nearly lattice-matched heterojunctions have been grown. In some cases, valence changes in the rare earth element cause doping of the alloy. In this paper some initial investigations of the addition of europium to indium antimonide are reported, including the variation of lattice parameter and optical transmission with composition and a negative magnetoresistance effect

Miscellaneous component design for Tank 241SY101 pump removal

International Nuclear Information System (INIS)

Huang, F.H.

1995-01-01

A mixer pump has been used to mitigate the hydrogen build-up in tank 241SY101 (SY101), located in the 200 West Area of the Hanford Site. New equipment is being prepared for the removal, transport, storage, and disposal of the test pump. The disposal equipment for the test pump now in tank SY101 includes a shipping container, a strong back, a lifting beam, a test weight, container support stands, a modified mock-up pump, a flexible receiver blast shield, a lifting yoke, and a yoke brace. The structural evaluations of container and strong back are detailed in another supporting document (WHC 1994a), the engineering analyses of flexible receiver blast shield/lifting yoke and yoke brace are given in other supporting documents (WHC 1994b, WHC 1994c), respectively. Engineering tasks that were contracted to Advanced Engineering Consultants (AEC) include the design and analysis of the following. Two spreader-beam lifting devices. a Container test weight. Container support saddles. Mock-up pump modification. This report documents the work description, design basis, assumptions, and design calculations provided by AEC for the above components. All AEC documents appear in Appendix A. Additional work conducted by Westinghouse Hanford Company (WHC) on the modified container test weight, modification to the mock-up pump, the removable support for the transport assembly, and saddle modification for air pallets also are included in this document

Cornell electron beam ion source

International Nuclear Information System (INIS)

Kostroun, V.O.; Ghanbari, E.; Beebe, E.N.; Janson, S.W.

1981-01-01

An electron beam ion source (EBIS) for the production of low energy, multiply charged ion beams to be used in atomic physics experiments has been designed and constructed. An external high perveance electron gun is used to launch the electron beam into a conventional solenoid. Novel features of the design include a distributed sputter ion pump to create the ultrahigh vacuum environment in the ionization region of the source and microprocessor control of the axial trap voltage supplies

Nonlinear diffraction from a virtual beam

DEFF Research Database (Denmark)

Saltiel, Solomon M.; Neshev, Dragomir N.; Krolikowski, Wieslaw

2010-01-01

We observe experimentally a novel type of nonlinear diffraction in the process of two-wave mixing on a nonlinear quadratic grating.We demonstrate that when the nonlinear grating is illuminated simultaneously by two noncollinear beams, a second-harmonic diffraction pattern is generated by a virtual...... beam propagating along the bisector of the two pump beams. The observed iffraction phenomena is a purely nonlinear effect that has no analogue in linear diffraction...

The TEXTOR helium self-pumping experiment: Design, plans, and supporting ion-beam data on helium retention in nickel

International Nuclear Information System (INIS)

Brooks, J.N.; Krauss, A.; Mattas, R.F.; Smith, D.L.; Nygren, R.E.; Doyle, B.L.; McGrath, R.T.; Walsh, D.; Dippel, K.H.; Finken, K.H.

1990-01-01

A proof-of-principle experiment to demonstrate helium self-pumping in a tokamak is being undertaken in TEXTOR. The experiment will use a helium self-pumping module installed in a modified ALT-I limiter head. The module consists of two, ≅ 25x25 cm 2 heated nickel alloy trapping plates, a nickel deposition filament array, and associated diagnostics. Between plasma shots a coating of ≅ 50A nickel will be deposited on the two trapping plates. During a shot helium and hydrogen ions will impinge on the plates through a ≅ 3 cm wide entrance slot. The helium removal capability, due to trapping in the nickel, will be assessed for a variety of plasma conditions. In support of the tokamak experiment, the trapping of helium over a range of ion fluences and surface temperatures, and detrapping during subsequent exposure to hydrogen, were measured in ion beam experiments using evaporated nickel surfaces similar to that expected in TEXTOR. Also, the retention of H and He after exposure of a nickel surface to mixed He/H plasmas has been measured. The results appear favorable, showing high helium trapping (≅ 10-50% He/Ni) and little or no detrapping by hydrogen. The TEXTOR experiment is planned to begin in 1991. (orig.)

The TEXTOR helium self-pumping experiment: Design, plans, and supporting ion-beam data on helium retention in nickel

International Nuclear Information System (INIS)

Brooks, J.N.; Krauss, A.; Mattas, R.F.; Smith, D.L.; Nygren, R.E.; Doyle, B.L.; McGrath, R.T.; Walsh, D.; Dippel, K.H.; Finken, K.H.

1990-01-01

A proof-of-principle experiment to demonstrate helium self-pumping in a tokamak is being undertaken in TEXTOR. The experiment will use a helium self-pumping module installed in a modified ALT-I limiter head. The module consists of two, ∼25 x 25 cm 2 heated nickel alloy trapping plates, a nickel deposition filament array, and associated diagnostics. Between plasma shots a coating of ∼50 angstrom nickel will be deposited on the two trapping plates. During a shot helium and hydrogen ions will impinge on the plates through a ∼3 cm wide entrance slot. The helium removal capability, due to trapping in the nickel, will be assessed for a variety of plasma conditions. In support of the tokamak experiment, the trapping of helium over a range of ion fluences and surface temperatures, and detrapping during subsequent exposure to hydrogen, were measured in ion beam experiments using evaporated nickel surfaces similar to that expected in TEXTOR. Also, the retention of H and He after exposure of a nickel surface to mixed He/H plasmas has bee measured. The results appear favorable, showing high helium trapping (∼10--50% He/Ni) and little or no detrapping by hydrogen. The TEXTOR experiment is planned to begin in 1991. 12 refs., 2 figs., 2 tabs

Semiconductor integrated circuits

International Nuclear Information System (INIS)

Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

1979-01-01

An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

Energy Technology Data Exchange (ETDEWEB)

Halbwax, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Sarnet, T. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France)], E-mail: sarnet@lp3.univ-mrs.fr; Hermann, J.; Delaporte, Ph.; Sentis, M. [Laboratoire LP3 CNRS UMR 6182, Parc Scientifique et Technologique de Luminy, Case 917, 163 Avenue de Luminy, 13009 Marseille (France); Fares, L.; Haller, G. [STMicroelectronics, 190 Avenue Celestin Coq, ZI, 13106 Rousset Cedex (France)

2007-12-15

The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring.

Micromachining of semiconductor by femtosecond laser for integrated circuit defect analysis

International Nuclear Information System (INIS)

Halbwax, M.; Sarnet, T.; Hermann, J.; Delaporte, Ph.; Sentis, M.; Fares, L.; Haller, G.

2007-01-01

The latest International Technology Roadmap for Semiconductors (ITRS) has highlighted the detection and analysis of defects in Integrated Circuits (IC) as a major challenge faced by the semiconductor industry. Advanced tools used today for defect cross sectioning include dual beams (focused ion- and electron-beam technologies) with resolution down to the sub-Angstrom level. However ion milling an IC with a FIB is time consuming because of the need to open wide cavities in front of the cross-sections that need to be analyzed. Therefore the use of a femtosecond laser as a tool for direct material removal is discussed in this paper. Experiments were performed on IC structures to reveal the different layers of fabrication: selective or total ablation can occur depending on the laser energy density, without delamination of the layers. Different laser irradiation conditions like pressure (air, vacuum), polarization, beam shaping, and scanning parameters have been used to produce different types of cavities. The femtosecond laser engraving of silicon-based structures could be useful for cross-sectioning devices but also for other applications like direct-write lithography, photomask repair, maskless implantation or reverse engineering/restructuring

Finite-momentum condensation in a pumped microcavity

International Nuclear Information System (INIS)

Brierley, R. T.; Eastham, P. R.

2010-01-01

We calculate the absorption spectra of a semiconductor microcavity into which a nonequilibrium exciton population has been pumped. We predict strong peaks in the spectrum corresponding to collective modes analogous to the Cooper modes in superconductors and fermionic atomic gases. These modes can become unstable, leading to the formation of off-equilibrium quantum condensates. We calculate a phase diagram for condensation and show that the dominant instabilities can be at a finite momentum. Thus we predict the formation of inhomogeneous condensates, similar to Fulde-Ferrel-Larkin-Ovchinnikov states.

Development of laser diode-pumped high average power solid-state laser for the pumping of Ti:sapphire CPA system

Energy Technology Data Exchange (ETDEWEB)

Maruyama, Yoichiro; Tei, Kazuyoku; Kato, Masaaki; Niwa, Yoshito; Harayama, Sayaka; Oba, Masaki; Matoba, Tohru; Arisawa, Takashi; Takuma, Hiroshi [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1998-03-01

Laser diode pumped all solid state, high repetition frequency (PRF) and high energy Nd:YAG laser using zigzag slab crystals has been developed for the pumping source of Ti:sapphire CPA system. The pumping laser installs two main amplifiers which compose ring type amplifier configuration. The maximum amplification gain of the amplifier system is 140 and the condition of saturated amplification is achieved with this high gain. The average power of fundamental laser radiation is 250 W at the PRF of 200 Hz and the pulse duration is around 20 ns. The average power of second harmonic is 105 W at the PRF of 170 Hz and the pulse duration is about 16 ns. The beam profile of the second harmonic is near top hat and will be suitable for the pumping of Ti:sapphire laser crystal. The wall plug efficiency of the laser is 2.0 %. (author)

Development of high current electron beam generator

Energy Technology Data Exchange (ETDEWEB)

Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook [and others

1997-05-01

A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs.

Development of high current electron beam generator

International Nuclear Information System (INIS)

Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook

1997-05-01

A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs

Ion Beams: A Powerful Tool for Making New Functional Materials

International Nuclear Information System (INIS)

Dev, B. N.

2010-01-01

It is well known that ion beams play an important role in semiconductor industry, which utilizes ion implantation and irradiation for materials modification. Ion sputtering technique is used to fabricate multifunctional coatings and multilayers. Using ion implantation, there is a continued effort for fabrication of quantum bit structures for future quantum computers. Availability of focused ion beams (FIBs) has widened the applications of ion beams and nanostructured functional materials are being fabricated using FIBs. Various quantum structures can be fabricated using FIB. Ferromagnetism can either be induced or destroyed in special layered structures using ion irradiation. The magnetic exchange bias phenomenon is of tremendous utility in magnetic recording. Issues of lateral diffusion in nanoscale doping of semiconductors by FIB and an example of exchange bias enhancement by ion irradiation are discussed.

Effects of moderate pump and Stokes chirp on chirped-probe pulse femtosecond coherent anti-Stokes Raman scattering thermometry

KAUST Repository

Gu, Mingming

2018-01-08

The effects of moderate levels of chirp in the pump and Stokes pulses on chirped-probe-pulse femtosecond coherent anti-Stokes Raman scattering (CPP fs CARS) were investigated. The frequency chirp in the pump and Stokes pulses was introduced by placing SF11 glass disks with thicknesses of 10 mm or 20 mm in the optical path for these beams. The magnitude of the chirp in the probe beam was much greater and was induced by placing a 30-cm rod of SF10 glass in the beam path. The temperature measurements were performed in hydrogen/air non-premixed flames stabilized on a Hencken burner at equivalence ratios of 0.3, 0.5, 0.7, and 1.0. We performed measurements with no disks in pump and Stokes beam paths, and then with disks of 10 mm and 20 mm placed in both beam paths. The spectrum of the nonresonant background four-wave mixing signal narrowed considerably with increasing pump and Stokes chirp, while the resonant CARS signal was relatively unaffected. Consequently, the interference of the nonresonant background with the resonant CARS signal in the frequency-spread dephasing region of the spectrum was minimized. The increased rate of decay of the resonant CARS signal with increasing temperature was thus readily apparent. We have started to analyze the CPP fs CARS thermometry data and initial results indicate improved accuracy and precision are obtained due to moderate chirp in the pump and Stokes laser pulses.

Laser optically pumped by laser-produced plasma

International Nuclear Information System (INIS)

Silfvast, W.T.; Wood, O.R. II.

1975-01-01

Laser solids, liquids and gases are pumped by a new technique in which the output from an efficient molecular laser, such as a CO 2 laser, ionizes a medium, such as xenon, into a generally cylindrical plasma volume, in proximity to the pumped laser body. Breakdown yields a visible and ultraviolet-radiation-emitting plasma in that volume to pump the laser body. The spectral radiance of the plasma is significantly higher than that produced by a dc-discharge-heated plasma at nearly all wavelengths in the plasma spectrum. The risetime of radiation from the laser-produced plasma can also be significantly shorter than that of a dc heated plasma. A further advantage resides in the fact that in some applications the attenuating walls needed by flashlamps may be eliminated with the result that laser threshold is more readily reached. Traveling wave excitation may be provided by oblique incidence of the pumping laser beam through the ionizable medium to create sequential ionization of portions of that medium along the length of the pumped laser body. (auth)

Spot size predictions of a focused ion beam based on laser cooling

NARCIS (Netherlands)

Haaf, ten G.; Wouters, S.H.W.; Geer, van der S.B.; Mutsaers, P.H.A.; Luiten, O.J.; Vredenbregt, E.J.D.

2014-01-01

The Atomic Beam Laser Cooled Ion Source (ABLIS) is a new source for focused ion beam instruments, which are used in the semiconductor industry, to image and modify structures on the nanometer length scale. The ABLIS employs laser cooling and compression of an atomic beam of rubidium to increase its

Design of a Highly Stable, High-Conversion-Efficiency, Optical Parametric Chirped-Pulse Amplification System with Good Beam Quality

International Nuclear Information System (INIS)

Guardalben, M.J.; Keegan, J.; Waxer, L.J.; Bagnoud, V.; Begishev, I.A.; Puth, J.; Zuegel, J.D.

2003-01-01

OAK B204 An optical parametric chirped-pulse amplifier (OPCPA) design that provides 40% pump-to-signal conversion efficiency and over-500-mJ signal energy at 1054 nm for front-end injection into a Nd:glass amplifier chain is presented. This OPCPA system is currently being built as the prototype front end for the OMEGA EP (extended performance) laser system at the University of Rochester's Laboratory for Laser Energetics. Using a three-dimensional spatial and temporal numerical model, several design considerations necessary to achieve high conversion efficiency, good output stability, and good beam quality are discussed. The dependence of OPCPA output on the pump beam's spatiotemporal shape and the relative size of seed and pump beams is described. This includes the effects of pump intensity modulation and pump-signal walk-off. The trade-off among efficiency, stability, and low output beam intensity modulation is discussed

Development of heavy-ion irradiation technique for single-event in semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Nemoto, Norio; Akutsu, Takao; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Naitoh, Ichiro; Itoh, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

1997-03-01

Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

Energy Technology Data Exchange (ETDEWEB)

Karni, O., E-mail: oulrik@tx.technion.ac.il; Mikhelashvili, V.; Eisenstein, G. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Kuchar, K. J. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Capua, A. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); IBM Almaden Research Center, San Jose, 95120 California (United States); Sęk, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Ivanov, V.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Kassel D-34132 (Germany)

2014-03-24

We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

Electron Beam Diagnostics in Plasmas Based on Electron Beam Ionization

Science.gov (United States)

Leonhardt, Darrin; Leal-Quiros, Edbertho; Blackwell, David; Walton, Scott; Murphy, Donald; Fernsler, Richard; Meger, Robert

2001-10-01

Over the last few years, electron beam ionization has been shown to be a viable generator of high density plasmas with numerous applications in materials modification. To better understand these plasmas, we have fielded electron beam diagnostics to more clearly understand the propagation of the beam as it travels through the background gas and creates the plasma. These diagnostics vary greatly in sophistication, ranging from differentially pumped systems with energy selective elements to metal 'hockey pucks' covered with thin layers of insulation to electrically isolate the detector from the plasma but pass high energy beam electrons. Most importantly, absolute measurements of spatially resolved beam current densities are measured in a variety of pulsed and continuous beam sources. The energy distribution of the beam current(s) will be further discussed, through experiments incorporating various energy resolving elements such as simple grids and more sophisticated cylindrical lens geometries. The results are compared with other experiments of high energy electron beams through gases and appropriate disparities and caveats will be discussed. Finally, plasma parameters are correlated to the measured beam parameters for a more global picture of electron beam produced plasmas.

Continuous all-optical deceleration of molecular beams

Science.gov (United States)

Jayich, Andrew; Chen, Gary; Long, Xueping; Wang, Anna; Campbell, Wesley

2014-05-01

A significant impediment to generating ultracold molecules is slowing a molecular beam to velocities where the molecules can be cooled and trapped. We report on progress toward addressing this issue with a general optical deceleration technique for molecular and atomic beams. We propose addressing the molecular beam with a pump and dump pulse sequence from a mode-locked laser. The pump pulse counter-propagates with respect to the beam and drives the molecules to the excited state. The dump pulse co-propagates and stimulates emission, driving the molecules back to the ground state. This cycle transfers 2 ℏk of momentum and can generate very large optical forces, not limited by the spontaneous emission lifetime of the molecule or atom. Importantly, avoiding spontaneous emission limits the branching to dark states. This technique can later be augmented with cooling and trapping. We are working towards demonstrating this optical force by accelerating a cold atomic sample.

Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

Energy Technology Data Exchange (ETDEWEB)

Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Dad, R. C. [Government P G College, Mandsaur (M P) (India); Ghosh, S. [School of Studies in Physics, Vikram University, Ujjain, (M P) (India)

2015-07-31

A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantly raised and the threshold pump field for the onset of SBS process is lowered.

Irradiation damages of semiconductor devices and their improvement

Energy Technology Data Exchange (ETDEWEB)

Uwatoko, Yoshiya [Saitama Univ., Urawa (Japan); Ohyama, Hidenori; Hayama, Kiyoteru; Hakata, Tetsuya; Kudou, Tomohiro

1998-01-01

In this study, effect of radiation on semiconductor devices was evaluated at both sides of electrical and crystalline properties for two years from 1995 fiscal years. And, damage of Si(sub 1-x)Ge(sub x) device was considered at viewpoints of Ge content and sprung-out atomic number and non ionization energy loss of constituting atom formed by radiation on its radiation source dependency of damage. This paper was a report on proton beam damage of the Si(sub 1-x)Ge(sub x) device, neutron damage of InGaAs photodiode, and effect of Ga content and kinds of beam on their damages. (G.K.)

Thermodynamic concepts in semiconductor quantum dot technology

International Nuclear Information System (INIS)

Shchukin, V.

2001-01-01

Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)

Backward pumping kilowatt Yb3+-doped double-clad fiber laser

Science.gov (United States)

Han, Z. H.; Lin, X. C.; Hou, W.; Yu, H. J.; Zhou, S. Z.; Li, J. M.

2011-09-01

A ytterbium-doped double-clad fiber laser generating up to 1026 W of continuous-wave output power at 1085 nm with a slope efficiency of 74% by single-ended backward pumping configuration is reported. The core diameter was 20 μm with a low numerical aperture of 0.06, and a good beam quality (BPP < 1.8 mm mrad) is achieved without special mode selection methods. No undesirable roll-over was observed in output power with increasing pump power, and the maximum output power was limited by the available pump power. The instability of maximum output power was better than ±0.6%. Different pumping configurations were also compared in experiment, which shows good agreements with theoretical analyses.

Optical approach to thermopower and conductivity measurements in thin-film semiconductors

International Nuclear Information System (INIS)

Dersch, H.; Amer, N.M.

1984-01-01

An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented

Pulsed-diode-pumped, all-solid-state, electro-optically controlled picosecond Nd:YAG lasers

International Nuclear Information System (INIS)

Gorbunkov, Mikhail V; Shabalin, Yu V; Konyashkin, A V; Kostryukov, P V; Olenin, A N; Tunkin, V G; Morozov, V B; Rusov, V A; Telegin, L S; Yakovlev, D V

2005-01-01

The results of the development of repetitively pulsed, diode-pumped, electro-optically controlled picosecond Nd:YAG lasers of two designs are presented. The first design uses the active-passive mode locking with electro-optical lasing control and semiconductor saturable absorber mirrors (SESAM). This design allows the generation of 15-50-ps pulses with an energy up to 0.5 mJ and a maximum pulse repetition rate of 100 Hz. The laser of the second design generates 30-ps pulses due to combination of positive and negative electro-optical feedback and the control of the electro-optical modulator by the photocurrent of high-speed semiconductor structures. (active media. lasers)

Pion minus energy measurement by a multilayer semiconductor spectrometer

International Nuclear Information System (INIS)

Gornov, M.G.; Gurov, Yu.B.; Lapushkin, S.V.

1981-01-01

A technique for determining π - meson energy by a laminated semiconductor spectrometer is described. Results of experimental test of the technique carried out using beams of meson track of the JINR synchrocyclotron and three Si(Li) detectors are given. A specific feature of the technique is that chi 2 criterium with a functional written through exact thicknesses of semiconductor detectors was used for separating events with disturbance of ionization dependence and determining particle energy. It is shown that the absolute resolution can be not worse than 0.5 MeV in a wide energy range. It is concluded that the technique suggested is suitable for measuring energy of any charged particles with indefinite energy release during stoppage [ru

Mid-infrared optical parametric oscillator pumped by an amplified random fiber laser

Science.gov (United States)

Shang, Yaping; Shen, Meili; Wang, Peng; Li, Xiao; Xu, Xiaojun

2017-01-01

Recently, the concept of random fiber lasers has attracted a great deal of attention for its feature to generate incoherent light without a traditional laser resonator, which is free of mode competition and insure the stationary narrow-band continuous modeless spectrum. In this Letter, we reported the first, to the best of our knowledge, optical parametric oscillator (OPO) pumped by an amplified 1070 nm random fiber laser (RFL), in order to generate stationary mid-infrared (mid-IR) laser. The experiment realized a watt-level laser output in the mid-IR range and operated relatively stable. The use of the RFL seed source allowed us to take advantage of its respective stable time-domain characteristics. The beam profile, spectrum and time-domain properties of the signal light were measured to analyze the process of frequency down-conversion process under this new pumping condition. The results suggested that the near-infrared (near-IR) signal light `inherited' good beam performances from the pump light. Those would be benefit for further develop about optical parametric process based on different pumping circumstances.

Theoretical model and simulations for a cw exciplex pumped alkali laser.

Science.gov (United States)

Huang, Wei; Tan, Rongqing; Li, Zhiyong; Lu, Xiaochuan

2015-12-14

The Exciplex Pumped Alkali Laser (XPAL) system, which is similar to DPAL (Diode Pumped Alkali vapor Laser), has been demonstrated in mixtures of Cs vapor, Ar, with and without ethane. Unlike DPAL, it uses the broadband absorption blue satellite of the alkali D2 line, created by naturally occuring collision pairs. For example, Cs-Ar collision pairs have an absorption width which is as wide as the one of commercial semiconductor diode lasers. A continuous wave XPAL four-level theoretical model is presented in this paper. More factors are considered, such as the spectral dependence of pumped laser absorption for broadband pumping and the longitudinal population variation. Some intra-cavity details, such as longitudinal distributions of pumped laser and alkali laser, can also be solved well. The predictions of optical-to-optical efficiency as a function of temperature and pumped laser intensity are presented. The model predicts that there is an optimum value of temperature or pumped laser intensity. The analysis of the influence of cell length on optical-to-optical efficiency shows that a better performance can be achieved when using longer cell. The prediction of influence of Ar concentration and reflectivity of output coupler shows that higher optical-to-optical efficiency could be achieved if lower reflectivity of output coupler and higher Ar concentration are used. The optical-to-optical efficiency as high as 84% achieved by optimizing configuration with the pumped intensity of 5 × 10⁷ W/cm² presented shows that broadband pumped four-level XPAL system has a potential of high optical-to-optical efficiency.

Solar pumped continuous wave carbon dioxide laser

Science.gov (United States)

Yesil, O.; Christiansen, W. H.

1978-01-01

In an effort to demonstrate the feasibility of a solar pumped laser concept, gain has been measured in a CO2-He laser medium optically pumped by blackbody radiation. Various gas mixtures of CO2 and He have been pumped by blackbody radiation emitted from an electrically heated oven. Using a CO2 laser as a probe, an optical gain coefficient of 1.8 x 10 to the -3rd/cm has been measured at 10.6 microns for a 9:1 CO2-He mixture at an oven temperature of about 1500 K, a gas temperature of about 400 K and a pressure of about 1 torr. This corresponds to a small signal gain coefficient when allowance is made for saturation effects due to the probe beam, in reasonable agreement with a theoretical value.

Apparatus for uniform pumping of lasing media

International Nuclear Information System (INIS)

Condit, W.C.; Eccles, S.F.

1975-01-01

Electron beam pumping of gaseous or liquid lasing media is carried out by means of electron pulses generated by an electron accelerator. Between the accelerator and the laser cavity, the electron pulse is subjected to a magnetic field to turn the electron pulse approximately through a quarter orbit, so that in essence the direction of pulse travel is changed from axial to lateral. This procedure then enables pumping of the laser cavity uniformly and simultaneously, or in any desired traveling wave mode, over the entire length of the laser cavity with relatively short, and highly intense, electron pulses. (U.S.)

A solar simulator-pumped atomic iodine laser

Science.gov (United States)

Lee, J. H.; Weaver, W. R.

1981-01-01

An atomic iodine laser, a candidate for the direct solar-pumped gas laser, was excited with a 4-kW beam from a xenon arc solar simulator. Continuous lasing at 1.315 micron for over 10 ms was obtained for static filling of n-C3F7I vapor. By momentarily flowing the lasant, a 30-Hz pulsed output was obtained for about 200 ms. The peak laser power observed was 4 W for which the system efficiency reached 0.1%. These results indicate that direct solar pumping of a gas laser for power conversion in space is indeed feasible.

Electron Beam Lithography for nano-patterning

DEFF Research Database (Denmark)

Greibe, Tine; Anhøj, Thomas Aarøe; Khomtchenko, Elena

2014-01-01

in a polymer. Electron beam lithography is a suitable method for nano-sized production, research, or development of semiconductor components on a low-volume level. Here, we present electron beam lithography available at DTU Danchip. We expertize a JEOL 9500FZ with electrons accelerated to an energy of 100ke......, the room temperature is controlled to an accuracy of 0.1 degrees in order to minimize the thermally induced drift of the beam during pattern writing. We present process results in a standard positive tone resist and pattern transfer through etch to a Silicon substrate. Even though the electron beam...... of electrons in the substrate will influence the patterning. We present solutions to overcome these obstacles....

Molecular beam epitaxy a short history

CERN Document Server

Orton, J W

2015-01-01

This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

General Method for Calculating the Response and Noise Spectra of Active Fabry-Perot Semiconductor Waveguides With External Optical Injection

DEFF Research Database (Denmark)

Blaaberg, Søren; Mørk, Jesper

2009-01-01

We present a theoretical method for calculating small-signal modulation responses and noise spectra of active Fabry-Perot semiconductor waveguides with external light injection. Small-signal responses due to either a modulation of the pump current or due to an optical amplitude or phase modulatio...... amplifiers and an injection-locked laser. We also demonstrate the applicability of the method to analyze slow and fast light effects in semiconductor waveguides. Finite reflectivities of the facets are found to influence the phase changes of the injected microwave-modulated light....

Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

International Nuclear Information System (INIS)

Kim, Jungho; Yu, Bong-Ahn

2015-01-01

We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases. (paper)

Structuring of silicon with low energy focused ion beams

Energy Technology Data Exchange (ETDEWEB)

Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

Minimizing unbalance response of the CRBRP sodium pumps

International Nuclear Information System (INIS)

Gupta, V.K.; Marrujo, F.G.

1979-04-01

The unbalance response characteristics of the vertical pumps for the Clinch River Breeder Reactor Plant are investigated. Finite-element shell and beam models representative of the pump-motor structure including the rotating assembly are developed to assess structural stiffnesses of dominant joints as well as the foundation support stiffness so as to exclude the danger of resonant excitation during normal operation. Less than four mils peak-to-peak vibration amplitude at the pump tank discharge nozzle results from just 10% frequency separation between the first rocking mode and the maximum operating speed of 1116 RPM, based on 0.5% modal damping ratio and balance quality grade of ISO/ANSI G2.5 for the rotating components: motor rotor, pump shaft, Bendix diaphragm-type flexible coupling, and centrigual double-suction impeller. Several design options are explored for raising shaft critical speed beyond 125% of maximum operating speed

Second harmonic generation by a relativistic annular electron beam propagating through a cylindrical waveguide

International Nuclear Information System (INIS)

Yasumoto, Kiyotoshi; Abe, Hiroshi

1983-01-01

The second harmonic generated by a relativistic annular electron beam propagating through a cylindrical waveguide immersed in a strong axial magnetic field is investigated on the basis of the relativistic hydrodynamic equations for cold electrons. The efficiency of second harmonic generation is calculated separately for the pump by the TM electromagnetic wave and for the pump by the slow space-charge wave, by assuming that the electron beam is thin and of low density and the pump wave is azimuthally symmetric. It is shown that, in the case of slow space-charge wave pump, an appreciably large efficiency of second harmonic generation is achieved in the high frequency region, whereas the efficiency by the TM electromagnetic wave pump is relatively small over the whole frequency range.(author)

Semiconductor testing method

International Nuclear Information System (INIS)

Brown, Stephen.

1992-01-01

In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

Combined VIS-IR spectrometer with vertical probe beam

Science.gov (United States)

Protopopov, V.

2017-12-01

A prototype of a combined visible-infrared spectrometer with a vertical probe beam is designed and tested. The combined spectral range is 0.4-20 μ with spatial resolution 1 mm. Basic features include the ability to measure both visibly transparent and opaque substances, as well as buried structures, such as in semiconductor industry; horizontal orientation of a sample, including semiconductor wafers; and reflection mode of operation, delivering twice the sensitivity compared to the transmission mode.

Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions.

Science.gov (United States)

Wu, Bing; Zhao, Yinghe; Nan, Haiyan; Yang, Ziyi; Zhang, Yuhan; Zhao, Huijuan; He, Daowei; Jiang, Zonglin; Liu, Xiaolong; Li, Yun; Shi, Yi; Ni, Zhenhua; Wang, Jinlan; Xu, Jian-Bin; Wang, Xinran

2016-06-08

Precise assembly of semiconductor heterojunctions is the key to realize many optoelectronic devices. By exploiting the strong and tunable van der Waals (vdW) forces between graphene and organic small molecules, we demonstrate layer-by-layer epitaxy of ultrathin organic semiconductors and heterostructures with unprecedented precision with well-defined number of layers and self-limited characteristics. We further demonstrate organic p-n heterojunctions with molecularly flat interface, which exhibit excellent rectifying behavior and photovoltaic responses. The self-limited organic molecular beam epitaxy (SLOMBE) is generically applicable for many layered small-molecule semiconductors and may lead to advanced organic optoelectronic devices beyond bulk heterojunctions.

Effective and efficient method of calculating Bessel beam fields

CSIR Research Space (South Africa)

Litvin, IA

2005-01-01

Full Text Available Bessel beams have gathered much interest of late due to their properties of near diffraction free propagation and self reconstruction after obstacles. Such laser beams have already found applications in fields such as optical tweezers and as pump...

Optimization of end-pumped, actively Q-switched quasi-III-level lasers.

Science.gov (United States)

Jabczynski, Jan K; Gorajek, Lukasz; Kwiatkowski, Jacek; Kaskow, Mateusz; Zendzian, Waldemar

2011-08-15

The new model of end-pumped quasi-III-level laser considering transient pumping processes, ground-state-depletion and up-conversion effects was developed. The model consists of two parts: pumping stage and Q-switched part, which can be separated in a case of active Q-switching regime. For pumping stage the semi-analytical model was developed, enabling the calculations for final occupation of upper laser level for given pump power and duration, spatial profile of pump beam, length and dopant level of gain medium. For quasi-stationary inversion, the optimization procedure of Q-switching regime based on Lagrange multiplier technique was developed. The new approach for optimization of CW regime of quasi-three-level lasers was developed to optimize the Q-switched lasers operating with high repetition rates. Both methods of optimizations enable calculation of optimal absorbance of gain medium and output losses for given pump rate. © 2011 Optical Society of America

A recycling molecular beam reactor

International Nuclear Information System (INIS)

Prada-Silva, G.; Haller, G.L.; Fenn, J.B.

1974-01-01

In a Recycling Molecular Beam Reactor, RMBR, a beam of reactant gas molecules is formed from a supersonic free jet. After collision with a target the molecules pass through the vacuum pumps and are returned to the nozzle source. Continuous recycling permits the integration of very small reaction probabilities into measurable conversions which can be analyzed by gas chromatography. Some preliminary experiments have been carried out on the isomerization of cyclopropane

Beam vacuum system of Brookhaven's muon storage ring

International Nuclear Information System (INIS)

Hseuth, H.C.; Snydstrup, L.; Mapes, M.

1995-01-01

A storage ring with a circumference of 45 m is being built at Brookhaven to measure the g-2 value of the muons to an accuracy of 0.35 ppm.. The beam vacuum system of the storage ring will operate at 10 -7 Torr and has to be completely non-magnetic. It consists of twelve sector chambers. The chambers are constructed of aluminum and are approximately 3.5 m in length with a rectangular cross-section of 16.5 cm high by 45 cm at the widest point. The design features, fabrication techniques and cleaning methods for these chambers are described. The beam vacuum system will be pumped by forty eight non-magnetic distributed ion pumps with a total pumping speed of over 2000 ell/sec. Monte Carlo simulations of the pressure distribution in the muon storage region are presented

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

NARCIS (Netherlands)

2010-01-01

The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

Broadband tunability of gain-flattened quantum-well semiconductor lasers with an external grating

International Nuclear Information System (INIS)

Mittelstein, M.; Mehuys, D.; Yariv, A.; Sarfaty, R.; Ungar, J.E.

1989-01-01

Semiconductor injection lasers are known to be tunable over a range of order kΒ · T. Quantum-well lasers, in particular, are shown to exhibit flattened, broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and is applied to a semiconductor quantum-well laser with an optimized length of gain region. The coupled-cavity formalism is employed to examine the conditions for continuous tuning. The possible tuning range of double-heterostructure lasers is compared to that of quantum-well lasers. The predicted broadband tunability of quantum-well lasers is confirmed experimentally by grating-tuning of uncoated lasers exceeding 120 nm, with single, longitudinal mode output power exceeding 300 mW

Design and construct of a tunable semiconductor laser

Directory of Open Access Journals (Sweden)

J. Sabbaghzadeh

2000-06-01

Full Text Available   In this paper we explain in detail the design of a semiconductor laser coupled with the reflected beams from a grating. Since the beams reflected are diffracted at different angles, only one component of them can be resonated in the cavity. This technique reduces the output frequency of the laser and increases its stability.   Since this system has various applications in the spectroscopy, gas concentrations, air pollution measurements, investigation of atomic and molecular structure, and so on, system is believed to be simple and accurate. This design is made for the first time in Iran and its reliability has been tested by the measurement of the rubidium atom, and the result is given.

Dye laser with distributed feedback and with pumping by copper-vapor laser

Energy Technology Data Exchange (ETDEWEB)

Mirza, S Yu; Soldatov, A N; Sukhanov, V B

1983-10-01

An experimental study was made for determining the characteristics of dye lasers with distributed feedback, not requiring intricate resonator structures, and the feasibility of their pumping with radiation from a metal-vapor laser. The experiments were performed with five different dyes lasing in the yellow-red (510.6 - 578.2 nm) range of the spectrum: rhodamine 110, 6G, S and ocazine 17,1 in ethyl alcohol solution. The optical equipment included a copper-vapor pumping laser with the gas-discharge tube inside a telescopic resonator of the unstable type. Pumping pulses of 20 ns duration were generated at 510.6 and 578.2 nm wavelengths and a 4 kHz repetition rate. The pumping power was varied by means of an interference filter smoothly adjustable through rotation. The pumping laser beam was focused by a cylindrical lens on the dye cell. At optimum dye concentrations, corresponding to a maximum attainable emission power, dye concentrate was added into the circulation system for determining the dependence of the pumping threshold power on the dye concentration. Also measured were the dependence of the emission efficiency on the pumping power and the tuning range of each dye laser. The efficiency was found to remain constant over the pumping power range from threshold level to eight times higher level. The results reveal different angles of laser beam divergence in the vertical plane and in the horizontal plane, the divergence angle being four times larger in the vertical plane. The conversion efficiency increased, without significant changes in spectral characteristics, with a single annular reflector instead of two reflectors. 9 references, 4 figures, 1 table.

Instrumentation for characterizing materials and composed semiconductors for ionizing radiation detectors

International Nuclear Information System (INIS)

Paschoal, Arquimedes J.A.; Leite, Adolfo M.B.; Nazzre, Fabio V.B.; Santos, Luiz A.P.

2007-01-01

The purpose of this work is the development of instrumentation for characterizing some type of ionizing radiation detectors. Those detectors are being manufactured by the Nuclear Instrumentation Laboratory at CRCN/Recife and can be used both on photon beam and with particles. Such detectors consist of semiconductor material in the form of films generated by oxide growing or by means of semiconductor material deposition in a substrate. Those materials can be made of metals, semi-metals, composites or semiconductor polymers. Prior to expose those detectors to ionizing radiation, it must be physically and electrically characterized. In this intention it was developed an electromechanical system. An electrical circuit was built to measure the signal from the detector and another circuit to control the movement of four probes (4-points technique) by using a stepper motor and the micro stepping technique avoiding damage to the detector. This system can be of interest to researchers that work with a sort of semiconductor materials in the form of thin film and in nanotechnological processes aiming the design of radiation ionizing detectors. (author)

Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

International Nuclear Information System (INIS)

Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

2009-01-01

An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

X-Ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

Science.gov (United States)

Park, Yeonjoon (Inventor); Kim, Hyun Jung (Inventor); Skuza, Jonathan R. (Inventor); Lee, Kunik (Inventor); King, Glen C. (Inventor); Choi, Sang Hyouk (Inventor)

2017-01-01

An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

Side-pumped Nd:YVO4 cw laser with grazing-incidence small angle configuration

International Nuclear Information System (INIS)

Camargo, Fabiola de Almeida

2006-01-01

Within the existing variety of laser cavity geometries and gain materials there is one combination that is particularly interesting because of its reduced complexity and high efficiency: the edge-pumped slab-laser using grazing-incidence geometry and a gain media with a very high pump absorption cross-section. In this work we studied a diode side-pumped Nd:YVO 4 cw laser. We describe a single and a multiple bounce laser configurations. We demonstrate 22 W of multimode output power for 35 watts of pump power with a single pass through the gain media. A high optical-to-optical conversion efficiency of 63% and a slope efficiency of 74% with a very compact and simple Nd:YVO 4 cavity that uses joint stability zones was achieved. The beam quality was M 2 = 26 x 11 in the horizontal and vertical direction, respectively. With a double pass configuration we achieved 17 watts with a better beam quality of M 2 = 3,4 x 3,7, in the horizontal and vertical direction, respectively. (author)

Five second helium neutral beam injection using argon-frost cryopumping techniques

International Nuclear Information System (INIS)

Phillips, J.C.; Kellman, D.H.; Hong, R.; Kim, J.; Laughon, G.M.

1995-10-01

High power helium neutral beams for the heating of tokamak discharges can now be provided for 5 s by using argon cryopumping (of the helium gas) in the beamlines. A system has now been installed to deposit a layer of argon frost on the DIII-D neutral beam cryopanels, between tokamak injection pulses. The layer serves to trap helium on the cryopanels providing sufficient pumping speed for 5 s helium beam extraction. The argon frosting hardware is now present on two of four DIII-D neutral beamlines, allowing injection of up to 6 MW of helium neutral beams per discharge, with pulse lengths of up to 5 s. The argon frosting system is described, along with experimental results demonstrating its effectiveness as a method of economically extending the capabilities of cryogenic pumping panels to allow multi-second helium neutral beam injection

Sodium pumping: pump problems

International Nuclear Information System (INIS)

Guer, M.; Guiton, P.

Information on sodium pumps for LMFBR type reactors is presented concerning ring pump design, pool reactor pump design, secondary pumps, sodium bearings, swivel joints of the oscillating annulus, and thermal shock loads

SLC polarized beam source ultra-high-vacuum design

International Nuclear Information System (INIS)

Lavine, T.L.; Clendenin, J.E.; Garwin, E.L.; Hoyt, E.W.; Hoyt, M.W.; Miller, R.H.; Nuttall, J.A.; Schultz, D.C.; Wright, D.

1991-05-01

This paper describes the design of the ultra-high vacuum system for the beam-line from the 160-kV polarized electron gun to the linac injector in the Stanford Linear Collider (SLC). The polarized electron source is a GaAs photocathode, requiring 10 -11 -Torr-range pressure for adequate quantum efficiency and longevity. The photo-cathode is illuminated by 3-nsec-long laser pulses. Photo-cathode maintenance and improvements require occasional substitution of guns with rapid restoration of UHV conditions. Differential pumping is crucial since the pressure in the injector is more than 10 times greater than the photocathode can tolerate, and since electron-stimulated gas desorption from beam loss in excess of 0.1% of the 20-nC pulses may poison the photocathode. Our design for the transport line contains a differential pumping region isolated by a pair of valves. Exchange of guns requires venting only this isolated region which can be restored to UHV rapidly by baking. The differential pumping is performed by non-evaporable getters (NEGs) and an ion pump. 3 refs., 3 figs

Particle removal with pump limiters in ISX-B

International Nuclear Information System (INIS)

Mioduszewski, P.; Emerson, L.C.; Simpkins, J.E.

1983-01-01

First pump limiter experiments were performed on ISX-B. Two pump limiter modules were installed in the top and bottom of one toroidal sector of the tokamak. The modules consist of inertia cooled, TiC coated graphite heads and Zr-Al getter pumps each with a pumping speed of 1000 to 2000 l/s. The objective of the initial experiments was the demonstration of plasma particle control with pump limiters. The first set of experiments were performed in ohmic discharges (OH) in which the effect of the pump limiters on the plasma density was clearly demonstrated. In discharges characterized by: I/sub p/ = 110 kA, B/sub T/ = 15 kG, anti n/sub e/ = 1 - 5 x 10 13 cm -3 and t = 0.3 s the pressure rise in the pump limiters was typically 2 mTorr with the pumps off and 0.7 mTorr after activating the pumps. When the pumps were activated, the line-average plasma density decreased by up to a factor 2 at identical gas flow rates. The second set of measurements were performed in neutral beam heated discharges (NBI) with injected powers between 0.6 MW and 1.0 MW. Due to a cooling problem on one of the Zr-Al pumps the NBI experiments were carried out with one limiter only. The maximum pressure observed in NBI-discharges was 5 mTorr without activating the pumps, i.e., approximately twice as high as in OH-discharges. The exhaust efficiency, which is defined as the removed particle flux over the total particle flux in the scrape-off layer is estimated to be 5%

Cladding-pumped Yb-doped fiber laser with vortex output beam

OpenAIRE

Lin, Di; Clarkson, William

2015-01-01

A simple technique for selectively generating a donut-shaped LP11 mode with vortex phase front in a cladding-pumped ytterbium-doped fiber laser is reported. The laser yielded 36W of output with a slope efficiency of 74%.

Neutral particle beam alternative concept for ITER

International Nuclear Information System (INIS)

Sedgley, D.; Brook, J.; Luzzi, T.; Deutsch, L.

1989-01-01

An analysis of an ITER neutral particle beam system is presented. The analysis covers the neutralizer, ion dumps, pumping, and geometric aspects. The US beam concept for ITER consists of three or four clusters of beamlines delivering approximately 80 MW total of 1.6-MeV deuterium to three or four reactor ports. Each cluster has three self-contained beamlines featuring plasma neutralizers and electrostatic ion dumps. In this study, each of the beamlines has two source assemblies with separate gas neutralizers and magnetic ion dumps. Deuterium is injected into the gas neutralizers by a separate system. Saddle-shaped copper coils augment the tokamak poloidal field to turn the charged particles into the ion dumps. The gas flow from the source, neutralizer, and ion dump is pumped by regenerable cryopanels. The effect of the port between the TF coils and the beam injection angle on the plasma footprint was studied

Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

Science.gov (United States)

Chen, Tai-Chou Papo

The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

PERFORMANCE OPTIMIZATION OF THE DIODE-PUMPED SOLID-STATE LASER FOR SPACE APPLICATIONS

Directory of Open Access Journals (Sweden)

D. A. Arkhipov

2015-11-01

Full Text Available Subject of Research. Thermophysical and optical techniques of parameter regulation for diode pumped solid-state laser are studied as applied to space laser communication and laser ranging lines. Methods. The investigations are carried out on the base of the original design of diode pumped solid-state laser module that includes the following: Nd:YAG slab element, diode pumped by 400W QCW produced by NORTHROP GRUMMAN; two-pass unstable resonator with rotation of the laser beam aperture about its axis through 1800; the output mirror of the resonator with a variable reflection coefficient; hyperthermal conductive plates for thermal stabilization of the laser diode generation modes. The presence of thermal conductive plates excludes conventional running water systems applied as cooling systems for solid-state laser components. The diodes temperature stabilization is achieved by applying the algorithm of pulse-width modulation of power of auxiliary electric heaters. To compensate for non-stationary thermal distortions of the slab refractive index, the laser resonator scheme comprises a prism reflector with an apex angle of 1200. Narrow sides of the prism are covered with reflective coating, and its wide side is sprayed with antireflection coating. The beam aperture is turned around its axis through 1800 because of triple reflection of the beam inside the prism. The turning procedure leads to compensating for the output beam phase distortions in view of symmetric character of the aberrations of slab refractive index. To suppress parasitic oscillations inside the slab, dielectric coatings of wide sides of the slab are used. Main Results. We have demonstrated theoretically and experimentally that the usage of hyperthermal conductive plates together with the algorithm of pulse-width modulation provides stabilizing of the diode substrate temperature accurate within ± 0.1 °С and smoothing the temperature distribution along the plate surface accurate

A diode-pumped continuous-wave Nd:YAG laser with an average output power of 1 kW

International Nuclear Information System (INIS)

Lee, Sung Man; Cha, Byung Heon; Kim, Cheol Jung

2004-01-01

A diode-pumped Nd:YAG laser with an average output power of 1 kW is developed for industrial applications, such as metal cutting, precision welding, etc. To develop such a diode-pumped high power solid-state laser, a series of laser modules have been used in general with and without thermal birefringence compensation. For example, Akiyama et al. used three laser modules to obtain a output power of 5.4 kW CW.1 In the side-pumped Nd:YAG laser, which is a commonly used pump scheme to obtain high output power, the crystal rod has a short thermal focal length at a high input pump power, and the short thermal focal length in turn leads to beam distortion within a laser resonator. Therefore, to achieve a high output power with good stability, isotropic beam profile, and high optical efficiency, the detailed analysis of the resonator stability condition depending on both mirror distances and a crystal separation is essential

Bacteria inside semiconductors as potential sensor elements: biochip progress.

Science.gov (United States)

Sah, Vasu R; Baier, Robert E

2014-06-24

It was discovered at the beginning of this Century that living bacteria-and specifically the extremophile Pseudomonas syzgii-could be captured inside growing crystals of pure water-corroding semiconductors-specifically germanium-and thereby initiated pursuit of truly functional "biochip-based" biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs) and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities' features at the time of first production of these potential biochips.

Production of a Beam of Highly Vibrationally Excited CO Using Perturbations

Science.gov (United States)

Bartels, N.; Schäfer, T.; Hühnert, J.; Wodtke, A. M.; Field, R. W.

2012-06-01

For many experimentalists (especially those, who are not spectroscopists), molecular pertubations are a curse, as they make assignments and analysis of spectral data more difficult. Nevertheless, they can also be a boon! In this talk we will show how a molecular beam of CO in high vibrational states (v=17,18) can be prepared by an optical pumping scheme that we call PUMP-PUMP-PERTURB and DUMP (P^3D). P^3D exploits the loaning, via spin-orbit perturbations, of the large oscillator strength of the 4th positive system, A ^1 π ← X ^1 Σ ^+, to the triplet manifold. This allows some nominally spin-forbidden transitions to be exploited in multistep optical pumping schemes. The ability to {state-selectively} prepare CO in high vibrational states opens up new opportunities for molecular beam scattering experiments.

Noise Suppression and Enhanced Focusability in Plasma Raman Amplifier with Multi-frequency Pump

International Nuclear Information System (INIS)

Balakin, A.A.; Fraiman, G.M.; Fisch, N.J.; Malkin, V.M.

2003-01-01

Laser pulse compression/amplification through Raman backscattering in plasmas can be facilitated by using multi-frequency pump laser beams. The efficiency of amplification is increased by suppressing the Raman instability of thermal fluctuations and seed precursors. Also the focusability of the amplified radiation is enhanced due to the suppression of large-scale longitudinal speckles in the pump wave structure

Effects of ion beam irradiation on semiconductor devices

Energy Technology Data Exchange (ETDEWEB)

Nashiyama, Isamu; Hirao, Toshio; Itoh, Hisayoshi; Ohshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods such as a scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. (author)

Electron Beam Scanning in Industrial Applications

Science.gov (United States)

Jongen, Yves; Herer, Arnold

1996-05-01

Scanned electron beams are used within many industries for applications such as sterilization of medical disposables, crosslinking of wire and cables insulating jackets, polymerization and degradation of resins and biomaterials, modification of semiconductors, coloration of gemstones and glasses, removal of oxides from coal plant flue gasses, and the curing of advanced composites and other molded forms. X-rays generated from scanned electron beams make yet other applications, such as food irradiation, viable. Typical accelerators for these applications range in beam energy from 0.5MeV to 10 MeV, with beam powers between 5 to 500kW and scanning widths between 20 and 300 cm. Since precise control of dose delivery is required in many of these applications, the integration of beam characteristics, product conveyance, and beam scanning mechanisms must be well understood and optimized. Fundamental issues and some case examples are presented.

Condensed matter physics with radioactive ion beams

International Nuclear Information System (INIS)

Haas, H.

1996-01-01

An overview of the present uses of radioactive ion beams from ISOLDE for condensed matter research is presented. As simple examples of such work, tracer studies of diffusion processes with radioisotopes and blocking/channeling measurements of emitted particles for lattice location are discussed. Especially the application of nuclear hyperfine interaction techniques such as PAC or Moessbauer spectroscopy has become a powerful tool to study local electronic and structural properties at impurities. Recently, interesting information on impurity properties in semiconductors has been obtained using all these methods. The extreme sensitivity of nuclear techniques makes them also well suited for investigations of surfaces, interfaces, and biomolecules. Some ideas for future uses of high energy radioactive ion beams beyond the scope of the present projects are outlined: the study of diffusion in highly immiscible systems by deep implantation, nuclear polarization with the tilted-foil technique, and transmutation doping of wide-bandgap semiconductors. (orig.)

Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

Energy Technology Data Exchange (ETDEWEB)

Nishiwaki, M.; Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2015-05-07

High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory.

Science.gov (United States)

El-Atwani, O; Norris, S A; Ludwig, K; Gonderman, S; Allain, J P

2015-12-16

Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

Science.gov (United States)

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Pumps and pump facilities. 2. ed.

International Nuclear Information System (INIS)

Bohl, W.; Bauerfeind, H.; Gutmann, G.; Leuschner, G.; Matthias, H.B.; Mengele, R.; Neumaier, R.; Vetter, G.; Wagner, W.

1981-01-01

This book deals with the common fundamental aspects of liquid pumps and gives an exemplary choice of the most important kinds of pumps. The scientific matter is dealt with by means of practical mathematical examples among other ways of presenting the matter. Survey of contents: Division on main operational data of pumps - pipe characteristics - pump characteristics - suction behaviour of the pumps - projecting and operation of rotary pumps - boiler feed pumps - reactor feed pumps - oscillating positive-displacement pumps - eccentric spiral pumps. (orig./GL) [de

Semiconductor Manufacturing equipment introduction

International Nuclear Information System (INIS)

Im, Jong Sun

2001-02-01

This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

Quasi-continuously pumped passively mode-locked 2.4% doped Nd:YAG oscillator-amplifier system in a bounce geometry

Science.gov (United States)

Jelínek, Michal; Kubecek, Vaclav; Cech, Miroslav; Hirsl, Petr

2010-02-01

We report on oscillator-amplifier system based on two highly doped 2.4 at. % crystalline Czochralski grown Nd:YAG crystals in a diode pumped bounce geometry configuration under quasi-continuous pumping. The oscillator was passively mode-locked by the semiconductor saturable absorber in transmission mode. The output pulse train consisted of 5 pulses with total energy of 270 μJ and pulse duration of 75 ps. The output train from the oscillator was amplified to the energy of 1 mJ by single pass amplifier.

Summary of Industry-Academia Collaboration Projects on Cluster Ion Beam Process Technology

International Nuclear Information System (INIS)

Yamada, Isao; Toyoda, Noriaki; Matsuo, Jiro

2008-01-01

Processes employing clusters of ions comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals, and dielectrics, to assisted formation of thin films with nano-scale accuracy, and to other surface modification applications. In 2000, a four year R and D project for development of industrial technology began in Japan under funding from the New Energy and Industrial Technology Development Organization (NEDO). Subjects of the projects are in areas of equipment development, semiconductor surface processing, high accuracy surface processing and high-quality film formation. In 2002, another major cluster ion beam project which emphasized nano-technology applications has started under a contract from the Ministry of Economy and Technology for Industry (METI). This METI project involved development related to size-selected cluster ion beam equipment and processes, and development of GCIB processes for very high rate etching and for zero damage etching of magnetic materials and compound semiconductor materials. This paper describes summery of the results.

Heterodyne pump-probe and four-wave mixing in semiconductor optical amplifiers using balanced lock-in detection

DEFF Research Database (Denmark)

Borri, Paola; Langbein, Wolfgang; Mørk, Jesper

1999-01-01

We demonstrate a new detection scheme for pump-probe and four-wave mixing heterodyne experiments, using balanced detection and a dual-phase lock-in for spectral filtering. The technique allows the use of low repetition-rate laser systems, as is demonstrated on an InGaAsP/InP bulk optical amplifier...... at 1.53 mym. Ultrafast pump-induced changes in the amplitude and phase of the transmitted probe signal are simultaneously measured, going from small to large signal changes and with no need of an absolute phase calibration, showing the versatility and the sensitivity of this detection scheme....... The results for small perturbations are consistent with previous pump-probe experiments reported in literature. Time-resolved four-wave mixing in the absorption regime of the device is measured, and compared with numerical simulations, indicating a 100 fs dephasing time....

A new slow positron beam facility using a compact cyclotron

International Nuclear Information System (INIS)

Hirose, Masafumi

1998-01-01

In 1993, Sumitomo Heavy Industries became the first in the world to successfully produce a slow positron beam using a compact cyclotron. Slow positron beam production using an accelerator had mainly consisted of using an electron linear accelerator (LINAC). However, the newly developed system that uses a compact cyclotron enabled cost reduction, downsizing of equipment, production of a DC slow positron beam, a polarized slow positron beam, and other benefits. After that, a genuine slow positron beam facility was developed with the construction of compact cyclotron No.2, and beam production in the new facility has already been started. The features of this new slow positron beam facility are explained below. 1) It is the world's first compact slow positron beam facility using a compact cyclotron. 2) It is the only genuine slow positron beam facility in the world which incorporates the production and use of a slow positron beam in the design stage of the cyclotron. To use a slow positron beam for non-destructive detection of lattice defects in semiconductor material, it is necessary to convert the beam into ultra-short pulses of several hundreds of pico-seconds. Sumitomo Heavy Industries has devised a new short-pulsing method (i.e. an induction bunching method) that enables the conversion of a slow positron beam into short pulses with an optimum pulsing electric field change, and succeeded in converting a slow positron beam into short pulses using this method for the first time in the world. Non-destructive detection of lattice defects in semiconductor material using this equipment has already been started, and some information about the depth distribution, size, density, etc. of lattice defects has already been obtained. (J.P.N.)

Excitonic optical bistability in n-type doped semiconductors

International Nuclear Information System (INIS)

Nguyen Ba An; Le Thi Cat Tuong

1991-07-01

A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

Scaling of an Optically Pumped Mid-Infrared Rubidium Laser

Science.gov (United States)

2015-03-26

beam, and the saturation intensity, Isat , was calculated using Equation 4.6: = ℎ( + ) , (6) where h is the...4.91 mm2, the intensity of the laser at a pump energy of 0.05 mJ was 10.2 mW/cm2. Thus I/ Isat ~ 290, so ∆νsat should have been about 17 times... Isat ~ 5796, so ∆νsat should have been about 76∆νD, in reasonable agreement with the experimental result of 53∆νD. Rb Laser Output Energy vs. Pump

Conditioning of a distributed ion pump

International Nuclear Information System (INIS)

Suetsugu, Yusuke

1994-01-01

A conditioning procedure using N 2 or Ar gas is applied to a distributed ion pump (DIP) of the TRISTAN accumulation ring. Effectiveness and problems of conditioning are experimentally investigated. Only a slight effect is observed in the N 2 gas conditioning due to the great pressure difference along the beam duct, so that a uniform conditioning cannot be achieved. The Ar gas conditioning, on the other hand, well activates the DIP. Pumping speeds near the design value, ≅ 80 1 s -1 per meter at pressures ≅ 1 x 10 -6 Pa, are obtained. The Ar component, however, increases after baking by more than a factor of 3 within 280 h. This increase makes it difficult to apply Ar gas conditioning to an accelerator ring. (author)

The ISOLDE RILIS pump laser upgrade and the LARIS Laboratory

International Nuclear Information System (INIS)

Marsh, B. A.; Berg, L.-E.; Fedorov, D. V.; Fedosseev, V. N.; Launila, O. J.; Lindroos, M.; Losito, R.; Osterdahl, F. K.; Pauchard, T.; Pohjalainen, I. T.; Sassenberg, U.; Seliverstov, M. D.; Sjoedin, A. M.; Transtroemer, G.

2010-01-01

On account of its high efficiency, speed and unmatched selectivity, the Resonance Ionization Laser Ion Source (RILIS) is the preferred method for ionizing the nuclear reaction products at the ISOLDE on-line isotope separator facility. By exploiting the unique electronic energy level 'fingerprint' of a chosen element, the RILIS process of laser step-wise resonance ionization enables an ion beam of high chemical purity to be sent through the mass selective separator magnet. The isobaric purity of a beam of a chosen isotope is therefore greatly increased. The RILIS, comprising of up to three frequency tunable pulsed dye lasers has been upgraded with the installation of a Nd:YAG pump laser as a replacement for the old Copper Vapor Laser (CVL) system. A summary of the current Nd:YAG pumped RILIS performance is given. To accompany the RILIS pump laser upgrade, a new ionization scheme for manganese has been developed at the newly constructed LAser Resonance Ionization Spectroscopy (LARIS) laboratory and successfully applied for on-line RILIS operation. An overview of the LARIS facility is given along with details of the ionization scheme development work for manganese.

Laser photo-reflectance characterization of resonant nonlinear electro-refraction in thin semiconductor films

International Nuclear Information System (INIS)

Chism, Will; Cartwright, Jason

2012-01-01

Photo-reflectance (PR) measurements provide a non-contact means for the precise characterization of semiconductor electronic properties. In this paper, we investigate the use of a laser beam as the probe beam in the PR setup. In this case it is seen that the nonlinear refraction is responsible for the amplitude change of the reflected probe field, whereas the phase change is due to nonlinear absorption. The open aperture condition may then be used to eliminate the spatial phase at the detector, thereby isolating the electro-refractive contribution to the PR signal. This greatly simplifies the PR analysis and allows absolute measurements of electro-refraction in thin semiconductor films. We report the application of the laser PR technique to characterize physical strain in thin silicon on silicon-germanium films. - Highlights: ► We describe the theory of laser photoreflectance. ► Laser photoreflectance is used to independently characterize nonlinear refraction. ► We report the characterization of strain in thin strained silicon films.

Treatment of tattoos with a 755-nm Q-switched alexandrite laser and novel 1064 nm and 532 nm Nd:YAG laser handpieces pumped by the alexandrite treatment beam.

Science.gov (United States)

Bernstein, Eric F; Bhawalkar, Jay; Clifford, Joan; Hsia, James

2010-11-01

Multi-colored and even black tattoos often require more than one wavelength to remove the target pigment. The authors report here a novel alexandrite laser with two Nd:YAG laser handpieces pumped by the alexandrite treatment beam enabling the delivery of three wavelengths from a single device. To describe and evaluate the effectiveness of a novel Q-switched laser-pumped laser for treating tattoos. Twenty tattoos in 14 subjects were treated at four-week intervals using a combination of available wavelengths (532, 755 and 1064 nm) as determined by the treating physician. Digital cross-polarized photographs were taken before treatment and two months following the fourth and final treatment. Photographs were evaluated by three physician observers blinded as to the treatment condition and rated for clearance by the following scale: 1 = > 95 percent, 2 = 76-95 percent, 3 = 51-75 percent, 4 = 26-50 percent and 5 = 0-25 percent clearance. The average clearance score was 3.1, in the 51-75 percent range, two months following four treatments. No scarring, hyper- or hypopigmentation was noted on post-treatment photographs or by the treating physician. The alexandrite and alexandrite-pumped 532 nm and 1064 nm Q-switched lasers are effective for removing decorative tattoos, and represents the first commercial laser with laser-pumped, laser handpieces.

fdtd Semiconductor Microlaser Simulator v. 2.0

Energy Technology Data Exchange (ETDEWEB)

2009-01-29

This software simulates the transient optical response of a system of in-plane semiconductor lasers/waveguides of almost arbitrary 2D complexity using the effective index approximation. Gain is calculated by solving a 3D transport equation from an arbitrary contact geometry and epi structure to get an input current density to the active region, followed by a diffusion equation for carriers in that layer. The gain is saturable and frequency dependent so that output powers and frequency spectrum/longitudinal modes are predicted. Solution is by the finite-difference time-domain method on a 2D triangular grid, so that propagation in any direction along the epi plan is allowed, and arbitrary laser/waveguide shapes can be modeled, including rings. Runtime considerations, however, limit the practical solution region to approximately 500 microns**2 so that the applicability of this code is primarily limited to micro-resinators. Modeling of standard-edge-emitting semiconductor lasers is better accomplished using algorithms based on bi-directional beam propagation.

Lattice Location of Transition Metals in Semiconductors

CERN Multimedia

2002-01-01

%IS366 %title\\\\ \\\\Transition metals (TMs) in semiconductors have been the subject of considerable research for nearly 40 years. This is due both to their role as important model impurities for deep centers in semiconductors, and to their technological impact as widespread contaminants in Si processing, where the miniaturization of devices requires to keep their sheet concentration below 10$^{10}$ cm$^{-2}$. As a consequence of the low TM solubility, conventional ion beam methods for direct lattice location have failed completely in identifying the lattice sites of isolated transition metals. Although electron paramagnetic resonance (EPR) has yielded valuable information on a variety of TM centers, it has been unable to detect certain defects considered by theory, e.g., isolated interstitial or substitutional Cu in Si. The proposed identity of other EPR centers such as substitutional Fe in Si, still needs confirmation by additional experimental methods. As a consequence, the knowledge on the structural propert...

On-chip high-voltage generator design design methodology for charge pumps

CERN Document Server

Tanzawa, Toru

2016-01-01

This book provides various design techniques for switched-capacitor on-chip high-voltage generators, including charge pump circuits, regulators, level shifters, references, and oscillators.  Readers will see these techniques applied to system design in order to address the challenge of how the on-chip high-voltage generator is designed for Flash memories, LCD drivers, and other semiconductor devices to optimize the entire circuit area and power efficiency with a low voltage supply, while minimizing the cost.  This new edition includes a variety of useful updates, including coverage of power efficiency and comprehensive optimization methodologies for DC-DC voltage multipliers, modeling of extremely low voltage Dickson charge pumps, and modeling and optimum design of AC-DC switched-capacitor multipliers for energy harvesting and power transfer for RFID.

Photoelectron spectroscopy of supersonic molecular beams

International Nuclear Information System (INIS)

Pollard, J.E.; Trevor, D.J.; Lee, Y.T.; Shirley, D.A.

1981-01-01

A high-resolution photoelectron spectrometer which uses molecular beam sampling is described. Photons from a rare-gas resonance lamp or UV laser are crossed with the beam from a differentially pumped supersonic nozzle source. The resulting photoelectrons are collected by an electrostatic analyzer of a unique design consisting of a 90 0 spherical sector preanalyzer, a system of lenses, and a 180 0 hemispherical deflector. A multichannel detection system based on dual microchannel plates with a resistive anode position encoder provides an increase in counting efficiency by a factor of 12 over the equivalent single channel detector. The apparatus has demonstrated an instrumental resolution of better than 10 meV FWHM, limited largely by the photon source linewidth. A quadrupole mass spectrometer is used to characterize the composition of the molecular beam. Extensive differential pumping is provided to protect the critical surfaces of the analyzer and mass spectrometer from contamination. Because of the near elimination of Doppler and rotational broadenings, the practical resolution is the highest yet obtained in molecular PES

Coherent laser beam combining

CERN Document Server

Brignon, Arnaud

2013-01-01

Recently, the improvement of diode pumping in solid state lasers and the development of double clad fiber lasers have allowed to maintain excellent laser beam quality with single mode fibers. However, the fiber output power if often limited below a power damage threshold. Coherent laser beam combining (CLBC) brings a solution to these limitations by identifying the most efficient architectures and allowing for excellent spectral and spatial quality. This knowledge will become critical for the design of the next generation high-power lasers and is of major interest to many industrial, environme

Above-cutoff impedance measurements of pumping holes for the Collider Liner

International Nuclear Information System (INIS)

Walling, L.; Barts, T.; Ruiz, E.; Turner, W.; Spayd, N.

1994-04-01

A holed liner was considered for the Superconducting Super Collider (SSC) Collider Ring because of vacuum problems caused by photon-induced desorption. The liner would serve to shield the cold surface of the beam tube from the synchrotron radiation and the holes (or slots) would allow distributed pumping by gas-absorption material that could be placed between the liner and the beam tube. The impedance of holes and slots in a liner were studied by means of simulations using both MAFIA and HFSS, analytical modelling, wire measurements and electron beam measurements

The status and new trends of ion beam induced charge technique

International Nuclear Information System (INIS)

Lu Rongrong; Qiu Huiyuan; Zhu Dezhang

2002-01-01

Ion beam induced charge technique (IBIC) with low beam current (fA level) and high efficiency is a new development of nuclear microscopy. It has been widely applied to the fields of semiconductor and microelectronic materials. The principle and the experimental method of the IBIC technique were described and reviewed its status and new trends were reviewed

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

Science.gov (United States)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Raman beam combining for laser brightness enhancement

Science.gov (United States)

Dawson, Jay W.; Allen, Graham S.; Pax, Paul H.; Heebner, John E.; Sridharan, Arun K.; Rubenchik, Alexander M.; Barty, Chrisopher B. J.

2015-10-27

An optical source capable of enhanced scaling of pulse energy and brightness utilizes an ensemble of single-aperture fiber lasers as pump sources, with each such fiber laser operating at acceptable pulse energy levels. Beam combining involves stimulated Raman scattering using a Stokes' shifted seed beam, the latter of which is optimized in terms of its temporal and spectral properties. Beams from fiber lasers can thus be combined to attain pulses with peak energies in excess of the fiber laser self-focusing limit of 4 MW while retaining the advantages of a fiber laser system of high average power with good beam quality.

A diode-pumped Tm:YAG laser with an elliptical cavity mode

International Nuclear Information System (INIS)

Lipnicki, E.; Dawes, J.M.; Browne, P.G.

2000-01-01

Full text: A cavity consisting of cylindrical mirrors/lenses resulting in an elliptical cavity mode is being applied to a 3-level laser; Tm:YAG which lases near 2μm. This arrangement allows the use of simple pump beam optics but also ensures efficient mode matching with good output beam quality. This cavity has been designed and modelled with experiments under way to explore the advantages of this laser design

Molecular-beam epitaxy growth and structural characterization of semiconductor-ferromagnet heterostructures by grazing incidence X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Satapathy, D.K.

2005-12-19

The present work is devoted to the growth of the ferromagnetic metal MnAs on the semiconductor GaAs by molecular-beam epitaxy (MBE). The MnAs thin films are deposited on GaAs by molecular-beam epitaxy (MBE). Grazing incidence diffraction (GID) and reflection high-energy electron diffraction (RHEED) are used in situ to investigate the nucleation, evolution of strain, morphology and interfacial structure during the MBE growth. Four stages of the nucleation process during growth of MnAs on GaAs(001) are revealed by RHEED azimuthal scans. GID shows that further growth of MnAs films proceed via the formation of relaxed islands at a nominal thickness of 2.5 ML which increase in size and finally coalesce to form a continuous film. Early on, an ordered array of misfit dislocations forms at the interface releasing the misfit strain even before complete coalescence occurs. The fascinating complex nucleation process of MnAs on GaAs(0 0 1) contains elements of both Volmer-Weber and Stranski-Krastanov growth. A nonuniform strain amounting to 0.66%, along the [1 -1 0] direction and 0.54%, along the [1 1 0] direction is demonstrated from x-ray line profile analysis. A high correlation between the defects is found along the GaAs[1 1 0] direction. An extremely periodic array of misfit dislocations with a period of 4.95{+-}0.05 nm is formed at the interface along the [1 1 0] direction which releases the 7.5% of misfit. The inhomogeneous strain due to the periodic dislocations is confined at the interface within a layer of 1.6 nm thickness. The misfit along the [1 -1 0] direction is released by the formation of a coincidence site lattice. (orig.)

Semiconductor acceleration sensor

Science.gov (United States)

Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

1996-09-01

This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

Diode-side-pumped continuous wave Nd³⁺ : YVO₄ self-Raman laser at 1176 nm.

Science.gov (United States)

Kores, Cristine Calil; Jakutis-Neto, Jonas; Geskus, Dimitri; Pask, Helen M; Wetter, Niklaus U

2015-08-01

Here we report, to the best of our knowledge, the first diode-side-pumped continuous wave (cw) Nd3+:YVO4 self-Raman laser operating at 1176 nm. The compact cavity design is based on the total internal reflection of the laser beam at the pumped side of the Nd3+:YVO4 crystal. Configurations with a single bounce and a double bounce of the laser beam at the pumped faced have been characterized, providing a quasi-cw peak output power of more than 8 W (multimode) with an optical conversion efficiency of 11.5% and 3.7 W (TEM00) having an optical conversion efficiency of 5.4%, respectively. Cw output power of 1.8 W has been demonstrated.

Interpreting coherent anti-Stokes Raman spectra measured with multimode Nd:YAG pump lasers

International Nuclear Information System (INIS)

Farrow, R.L.; Rahn, L.A.

1985-01-01

We report comparisons of coherent anti-Stokes Raman spectroscopy (CARS) measurements using single-axial-and multiaxial-mode Nd:YAG lasers. Our results demonstrate the validity of a recently proposed convolution expression for unresolved CARS spectra. The results also support the use of a relative delay of several coherence lengths between pump-beam paths for reducing the effects of pump-field statistics on the CARS spectral profile

Efficient diode-side-pumped Nd:YVO4 slab laser in different generation regimes

International Nuclear Information System (INIS)

Zinov'ev, A P; Antipov, Oleg L; Novikov, A A

2009-01-01

A diode-side-pumped Nd:YVO 4 slab laser with the grazing-incidence bounce geometry of the cavity is studied experimentally. Upon continuous pumping different lasing regimes are realised, namely, cw, passive and active Q-switching and passive mode-locking. The resonator parameters are optimised to achieve the maximum cw output power (∼17 W) and high-quality beam (M 2 ∼ 1.3). (lasers)

Highly efficient solar-pumped Nd:YAG laser.

Science.gov (United States)

Liang, Dawei; Almeida, Joana

2011-12-19

The recent progress in solar-pumped laser with Fresnel lens and Cr:Nd:YAG ceramic medium has revitalized solar laser researches, revealing a promising future for renewable reduction of magnesium from magnesium oxide. Here we show a big advance in solar laser collection efficiency by utilizing an economical Fresnel lens and a most widely used Nd:YAG single-crystal rod. The incoming solar radiation from the sun is focused by a 0.9 m diameter Fresnel lens. A dielectric totally internally reflecting secondary concentrator is employed to couple the concentrated solar radiation from the focal zone to a 4 mm diameter Nd:YAG rod within a conical pumping cavity. 12.3 W cw laser power is produced, corresponding to 19.3 W/m(2) collection efficiency, which is 2.9 times larger than the previous results with Nd:YAG single-crystal medium. Record-high slope efficiency of 3.9% is also registered. Laser beam quality is considerably improved by pumping a 3 mm diameter Nd:YAG rod.

16.4 W laser output at 1.34 μm with twin Nd:YVO4 crystals and double-end-pumping structure

International Nuclear Information System (INIS)

Lu, C; Gong, M; Liu, Q; Huang, L; He, F

2008-01-01

High-power high-beam-quality 1.34 μm continuous-wave laser with twin Nd:YVO 4 crystals pumped by four fiber-coupled laser diodes, which constructed a double-end-pumping structure, is reported. With total 60 W pumping power incident, the highest 16.4 W output laser power was generated, the slope efficiency and optical efficiency were measured as better than 30.0% and 27.3%, respectively. With 12 W laser output, the beam quality was measured to be better than two times diffraction-limit and the instability of laser output was determined to be better than 1% over an hour time

Demonstrations of diode-pumped and grating-tuned ZnSe:Cr2+ lasers

International Nuclear Information System (INIS)

Page, R.H.; Skidmore, J.A.; Schaffers, K.I.; Beach, R.J.; Payne, S.A.; Krupke, W.F.

1996-09-01

Within the last few years, divalent-transition-metal-doped II-VI material class has been proposed as source of new tunable mid-IR lasers. Cr 2+ is a prime laser candidate on account of its high luminescence quantum yield and the expectation that ESA would be absent. The first ZnSe:Cr 2+ laser demonstrations were conducted in an end-pumped geometry with a tightly focused (0.2 mm spot) MgF 2 -Co 2+ laser beam, for a peak pump intensity well over 100 kW/cm 2 , so laser threshold was easily reached. Grating tuning experiments were done by replacing the cavity high-reflector with a diffraction grating. The diode array was removed and pump beam from a MgF 2 :Co 2+ laser was focused onto the crystal using the same cylindrical lens. Output wavelengths were checked with a monochromator. The long-wavelength limit of operation was 2799 nm. Short-wavelength cutoff was 2134 nm; even though the emission cross section remains substantial, self-absorption inhibits laser operation

Optical fiber grating vibration sensor for vibration monitoring of hydraulic pump

Science.gov (United States)

Zhang, Zhengyi; Liu, Chuntong; Li, Hongcai; He, Zhenxin; Zhao, Xiaofeng

2017-06-01

In view of the existing electrical vibration monitoring traditional hydraulic pump vibration sensor, the high false alarm rate is susceptible to electromagnetic interference and is not easy to achieve long-term reliable monitoring, based on the design of a beam of the uniform strength structure of the fiber Bragg grating (FBG) vibration sensor. In this paper, based on the analysis of the vibration theory of the equal strength beam, the principle of FBG vibration tuning based on the equal intensity beam is derived. According to the practical application of the project, the structural dimensions of the equal strength beam are determined, and the optimization design of the vibrator is carried out. The finite element analysis of the sensor is carried out by ANSYS, and the first order resonant frequency is 94.739 Hz. The vibration test of the sensor is carried out by using the vibration frequency of 35 Hz and the vibration source of 50 Hz. The time domain and frequency domain analysis results of test data show that the sensor has good dynamic response characteristics, which can realize the accurate monitoring of the vibration frequency and meet the special requirements of vibration monitoring of hydraulic pump under specific environment.

Spin-transport-phenomena in metals, semiconductors, and insulators

Energy Technology Data Exchange (ETDEWEB)

Althammer, Matthias Klaus

2012-07-19

Assuming that one could deterministically inject, transport, manipulate, store and detect spin information in solid state devices, the well-established concepts of charge-based electronics could be transferred to the spin realm. This thesis explores the injection, transport, manipulation and storage of spin information in metallic conductors, semiconductors, as well as electrical insulators. On the one hand, we explore the spin-dependent properties of semiconducting zinc oxide thin films deposited via laser-molecular beam epitaxy (laser-MBE). After demonstrating that the zinc oxide films fabricated during this thesis have excellent structural, electrical, and optical properties, we investigate the spin-related properties by optical pump/probe, electrical injection/optical detection, and all electrical spin valve-based experiments. The two key results from these experiments are: (i) Long-lived spin states with spin dephasing times of 10 ns at 10 K related to donor bound excitons can be optically addressed. (ii) The spin dephasing times relevant for electrical transport-based experiments are {<=} 2 ns at 10 K and are correlated with structural quality. On the other hand we focus on two topics of current scientific interest: the comparison of the magnetoresistance to the magnetothermopower of conducting ferromagnets, and the investigation of pure spin currents generated in ferromagnetic insulator/normal metal hybrid structures. We investigate the magnetoresistance and magnetothermopower of gallium manganese arsenide and Heusler thin films as a function of external magnetic field orientation. Using a series expansion of the resistivity and Seebeck tensors and the inherent symmetry of the sample's crystal structure, we show that a full quantitative extraction of the transport tensors from such experiments is possible. Regarding the spin currents in ferromagnetic insulator/normal metal hybrid structures we studied the spin mixing conductance in yttrium iron garnet

Resistance and sheet resistance measurements using electron beam induced current

International Nuclear Information System (INIS)

Czerwinski, A.; Pluska, M.; Ratajczak, J.; Szerling, A.; KaPtcki, J.

2006-01-01

A method for measurement of spatially uniform or nonuniform resistance in layers and strips, based on electron beam induced current (EBIC) technique, is described. High electron beam currents are used so that the overall resistance of the measurement circuit affects the EBIC signal. During the evaluation, the electron beam is scanned along the measured object, whose load resistance varies with the distance. The variation is compensated by an adjustable resistance within an external circuit. The method has been experimentally deployed for sheet resistance determination of buried regions of lateral confinements in semiconductor laser heterostructures manufactured by molecular beam epitaxy

High-energy high-efficiency Nd:YLF laser end-pump by 808 nm diode

Science.gov (United States)

Ma, Qinglei; Mo, Haiding; Zhao, Jay

2018-04-01

A model is developed to calculate the optimal pump position for end-pump configuration. The 808 nm wing pump is employed to spread the absorption inside the crystal. By the optimal laser cavity design, a high-energy high-efficiency Nd:YLF laser operating at 1053 nm is presented. In cw operation, a 13.6 W power is obtained with a slope efficiency of 51% with respect to 30 W incident pump power. The beam quality is near diffraction limited with M2 ∼ 1.02. In Q-switch operation, a pulse energy of 5 mJ is achieved with a peak power of 125 kW at 1 kHz repetition rate.

Characterization of semiconductor and frontier materials by nuclear microprobe technology

International Nuclear Information System (INIS)

Zhu Jieqing; Li Xiaolin; Yang Changyi; Lu Rongrong; Wang Jiqing; Guo Panlin

2002-01-01

The nuclear microprobe technology is used to characterize the properties of semiconductor and other frontier materials at the stages of their synthesis, modification, integration and application. On the basis of the beam current being used, the analytical nuclear microprobe techniques being used in this project can be divided into two categories: high beam current (PIXE, RBS, PEB) or low beam current (IBIC, STIM) techniques. The material properties measured are the thickness and composition of a composite surface on a SiC ceramic, the sputtering-induced surface segregation and depth profile change in a Ag-Cu binary alloy, the irradiation effects on the CCE of CVD diamond, the CCE profile at a polycrystalline CVD diamond film and a GaAs diode at different voltage biases and finally, the characterization of individual sample on an integrated material chip. (author)

Double-sided electron-beam generator for KrF laser excitation

International Nuclear Information System (INIS)

Schlitt, L.; Swingle, J.

1980-05-01

Several laser systems excited by electron beam have been identified as candidates for pump sources for laser fusion applications. The electron beam generators required must be compact, reliable and capable of synchronization with other system components. A KrF laser producing a minimum output of 25 J was needed for the RAPIER (Raman Amplifier Pumped by Intensified Excimer Radiation) system. A double-sided electron beam system was designed and constructed specifically for this purpose and has produced > 35 J of KrF output. Each of the two electron beam machines in the system operates with an rms jitter of 0.4 ns and together occupy approx. 3.5 m 2 of floor space. The successful operation of this laser has engendered requests for a description of the engineering details of this system. This document contains a brief description of the design issues and a full set of engineering drawings for this KrF laser amplifier

Compact fibre-laser-pumped Ho:YLF oscillator–amplifier system

CSIR Research Space (South Africa)

Koen, W

2010-04-01

Full Text Available of the amplifier crystal L and the pump spot radius wp ( Ω = 2pi · (1 − cosβ), with β = tan−1(wpL )). Calculating the local population in (3) and iterating (6) and (11) along the length of the amplifier crystal, we obtain the extracted photon densities...-pumped tunable Tm: silica- fibre laser. Appl. Phys. B 79, 559 (2004) 6. E. Lippert, S. Nicolas, G. Arisholm, K. Stenersen, G. Rustad, Mid- infrared laser source with high power and beam quality. Appl. Opt. 45, 3839 (2006) 7. S.A. Payne, L.L. Chase, L...

Pumping behavior of sputter ion pumps

International Nuclear Information System (INIS)

Chou, T.S.; McCafferty, D.

The ultrahigh vacuum requirements of ISABELLE is obtained by distributed pumping stations. Each pumping station consists of 1000 l/s titanium sublimation pump for active gases (N 2 , H 2 , O 2 , CO, etc.), and a 20 l/s sputter ion pump for inert gases (methane, noble gases like He, etc.). The combination of the alarming production rate of methane from titanium sublimation pumps (TSP) and the decreasing pumping speed of sputter ion pumps (SIP) in the ultrahigh vacuum region (UHV) leads us to investigate this problem. In this paper, we first describe the essential physics and chemistry of the SIP in a very clean condition, followed by a discussion of our measuring techniques. Finally measured methane, argon and helium pumping speeds are presented for three different ion pumps in the range of 10 -6 to 10 -11 Torr. The virtues of the best pump are also discussed

Research and development on optically pumped polarized ion sources. Technical progress report, July 1, 1985-June 30, 1986

International Nuclear Information System (INIS)

Anderson, L.W.

1986-07-01

The development of an optically pumped polarized 23 Na target is discussed. The three categories of research are: (1) electron spin relaxation of the 23 Na due to wall collisions; (2) effects of radiation trapping on the polarization that can be produced in an alkali target by optical pumping; and (3) the effects of spin exchange collisions in the polarization of a fast H 0 beam formed by charge transfer as an H + beam passes through a polarized alkali target. 90 refs., 7 figs

Two-tint pump-probe measurements using a femtosecond laser oscillator and sharp-edged optical filters.

Science.gov (United States)

Kang, Kwangu; Koh, Yee Kan; Chiritescu, Catalin; Zheng, Xuan; Cahill, David G

2008-11-01

We describe a simple approach for rejecting unwanted scattered light in two types of time-resolved pump-probe measurements, time-domain thermoreflectance (TDTR) and time-resolved incoherent anti-Stokes Raman scattering (TRIARS). Sharp edged optical filters are used to create spectrally distinct pump and probe beams from the broad spectral output of a femtosecond Ti:sapphire laser oscillator. For TDTR, the diffusely scattered pump light is then blocked by a third optical filter. For TRIARS, depolarized scattering created by the pump is shifted in frequency by approximately 250 cm(-1) relative to the polarized scattering created by the probe; therefore, spectral features created by the pump and probe scattering can be easily distinguished.

Intensity-gradient induced Sisyphus cooling of a single atom in a localized hollow-beam trap

International Nuclear Information System (INIS)

Yin, Yaling; Xia, Yong; Ren, Ruimin; Du, Xiangli; Yin, Jianping

2015-01-01

In order to realize a convenient and efficient laser cooling of a single atom, we propose a simple and promising scheme to cool a single neutral atom in a blue-detuned localized hollow-beam trap by intensity-gradient induced Sisyphus cooling, and study the dynamic process of the intensity-gradient cooling of a single 87 Rb atom in the localized hollow-beam trap by using Monte-Carlo simulations. Our study shows that a single 87 Rb atom with a temperature of 120 μK from a magneto-optical trap (MOT) can be directly cooled to a final temperature of 4.64 μK in our proposed scheme. We also investigate the dependences of the cooling results on the laser detuning δ of the localized hollow-beam, the power RP 0 of the re-pumping laser beam, the sizes of both the localized hollow-beam and the re-pumping beam, and find that there is a pair of optimal cooling parameters (δ and RP 0 ) for an expected lowest temperature, and the cooling results strongly depend on the size of the re-pumping beam, but weakly depend on the size of the localized hollow-beam. Finally, we further study the cooling potential of our localized hollow-beam trap for the initial temperature of a single atom, and find that a single 87 Rb atom with an initial temperature of higher than 1 mK can also be cooled directly to about 6.6 μK. (paper)

A semiconductor parameter analyzer for ionizing radiation detectors

International Nuclear Information System (INIS)

Santos, Luiz A.P.

2009-01-01

Electrometers and ion chamber are normally used to make several types of measurements in a radiation field and there is a unique voltage applied to each detector type. Some electronic devices that are built of semiconductor materials like silicon crystal can also be used for the same purpose. In this case, a characteristic curve of the device must be acquired to choose an operation point which consists of an electrical current or voltage to be applied to the device. Unlike ion chambers, such an electronic device can have different operation points depending on its current versus voltage curve (I x V). The best operation point of the device is also a function of the radiation, energy, dose rate and fluence. The purpose of this work is to show a semiconductor parameter analyzer built to acquire I x V curves as usually, and the innovation here is the fact that it can be used to obtain such a parametric curve when a quad-polar device is under irradiation. The results demonstrate that the system is a very important tool to scientists interested to evaluate a semiconductor detector before, during and after irradiation. A collection of results for devices under an X-ray beam and a neutron fluence are presented: photodiode, phototransistors, bipolar transistor and MOSFET. (author)

Semiconductor physics

CERN Document Server

Böer, Karl W

2018-01-01

This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.