WorldWideScience

Sample records for beam pumped semiconductor

  1. E-beam-pumped semiconductor lasers

    Science.gov (United States)

    Rice, Robert R.; Shanley, James F.; Ruggieri, Neil F.

    1995-04-01

    The collapse of the Soviet Union opened many areas of laser technology to the West. E-beam- pumped semiconductor lasers (EBSL) were pursued for 25 years in several Soviet Institutes. Thin single crystal screens of II-VI alloys (ZnxCd1-xSe, CdSxSe1-x) were incorporated in laser CRTs to produce scanned visible laser beams at average powers greater than 10 W. Resolutions of 2500 lines were demonstrated. MDA-W is conducting a program for ARPA/ESTO to assess EBSL technology for high brightness, high resolution RGB laser projection application. Transfer of II-VI crystal growth and screen processing technology is underway, and initial results will be reported. Various techniques (cathodoluminescence, one- and two-photon laser pumping, etc.) have been used to assess material quality and screen processing damage. High voltage (75 kV) video electronics were procured in the U.S. to operate test EBSL tubes. Laser performance was documented as a function of screen temperature, beam voltage and current. The beam divergence, spectrum, efficiency and other characteristics of the laser output are being measured. An evaluation of the effect of laser operating conditions upon the degradation rate is being carried out by a design-of-experiments method. An initial assessment of the projected image quality will be performed.

  2. Modulation above Pump Beam Energy in Photoreflectance

    Directory of Open Access Journals (Sweden)

    D. Fuertes Marrón

    2017-01-01

    Full Text Available Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set up by the pump beam and the lowest absorption threshold of the sample. There is, however, no fundamental upper limit for the probe beam other than the limited spectral content of the source and the responsivity of the detector. As long as the modulation mechanism behind photoreflectance does affect the complete electronic structure of the material under study, sweeping the probe beam towards higher energies from that of the pump source is equally effective in order to probe high-energy critical points. This fact, up to now largely overseen, is shown experimentally in this work. E1 and E0 + Δ0 critical points of bulk GaAs are unambiguously resolved using pump light of lower energy. This type of upstream modulation may widen further applications of the technique.

  3. An enhancement of spin polarization by multiphoton pumping in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2011-08-15

    Highlights: {yields} Multiphoton pumping and spin generation in semiconductors. {yields} Optical selection rules for inter-band transitions. {yields} Calculations of spin polarization using band-energy model and the second order perturbation theory. {yields} Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

  4. An enhancement of spin polarization by multiphoton pumping in semiconductors

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2011-01-01

    Highlights: → Multiphoton pumping and spin generation in semiconductors. → Optical selection rules for inter-band transitions. → Calculations of spin polarization using band-energy model and the second order perturbation theory. → Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

  5. Electron beam writing on semiconductors

    International Nuclear Information System (INIS)

    Bierhenke, H.; Kutzer, E.; Pascher, A.; Plitzner, H.; Rummel, P.; Siemens A.G., Muenchen; Siemens A.G., Muenchen

    1979-08-01

    Reported are the results of the 3 1/2 year research project 'Electron beam Writing on Semiconductors'. Work has been done in the field of direct wafer exposure techniques, and of mask making. Described are resist technology, setting up of a research device, exploration of alignment procedures, manufacturing of devices and their radiation influence. Furthermore, investigations and measurements of an electron beam machine bought for mask making purposes, the development of LSI-circuits with this machine, the software necessary and important developments of digital subsystems are reported. (orig.) [de

  6. Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

    International Nuclear Information System (INIS)

    Jana, Dipankar; Porwal, S.; Sharma, T. K.; Oak, S. M.; Kumar, Shailendra

    2014-01-01

    Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates

  7. Spherical distribution structure of the semiconductor laser diode stack for pumping

    International Nuclear Information System (INIS)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

  8. 1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

    OpenAIRE

    Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

    2000-01-01

    We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

  9. Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Kozlovskii, Vladimir I; Korostelin, Yurii V; Skasyrsky, Yan K; Shapkin, P V; Trubenko, P A; Dianov, Evgenii M

    1998-01-01

    The method of molecular beam epitaxy on a ZnSe substrate was used to grow a ZnCdSe/ZnSe structure with 115 quantum wells. This structure was made up into a cavity which included part of the substrate. Lasing was excited by longitudinal pumping with a scanning electron beam of E e = 40 - 70 keV energy. At T = 80 K for E e = 65 keV the threshold current density was 60 A cm -2 and the output power was 0.15 W at the 465 nm wavelength. At T= 300 K the lasing (λ= 474 nm) occurred in the ZnSe substrate. (lasers)

  10. Walking beam pumping unit system efficiency measurements

    International Nuclear Information System (INIS)

    Kilgore, J.J.; Tripp, H.A.; Hunt, C.L. Jr.

    1991-01-01

    The cost of electricity used by walking beam pumping units is a major expense in producing crude oil. However, only very limited information is available on the efficiency of beam pumping systems and less is known about the efficiency of the various components of the pumping units. This paper presents and discusses measurements that have been made on wells at several Shell locations and on a specially designed walking beam pump test stand at Lufkin Industries. These measurements were made in order to determine the overall system efficiency and efficiency of individual components. The results of this work show that the overall beam pumping system efficiency is normally between 48 and 58 percent. This is primarily dependent on the motor size, motor type, gearbox size, system's age, production, pump size, tubing size, and rod sizes

  11. Key techniques for space-based solar pumped semiconductor lasers

    Science.gov (United States)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  12. Direct solar pumping of semiconductor lasers: A feasibility study

    Science.gov (United States)

    Anderson, Neal G.

    1992-01-01

    This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is

  13. Electron-beam-pumped phosphors

    International Nuclear Information System (INIS)

    Goldhar, J.; Krupke, W.F.

    1985-01-01

    Electron-beam excitation of solid-state scintillators, or phosphors, can result in efficient generation of visible light confined to relatively narrow regions of the spectrum. The conversion efficiency can exceed 20%, and, with proper choice of phosphors, radiation can be obtained anywhere from the near infrared (IR) to the near ultraviolet (UV). These properties qualify the phosphors as a potentially useful pump source for new solid-state lasers. New phosphors are being developed for high-brightness television tubes that are capable of higher power dissipation. Here, an epitaxial film of fluorescing material is grown on a crystalline substrate with good thermal properties. For example, researchers at North American Philips Laboratories have developed a cerium-doped yttrium aluminum garnet (YAG) grown on a YAG substrate, which has operated at 1 A/cm 2 at 20 kV without observed thermal quenching. The input power is higher by almost two orders of magnitude than that which can be tolerated by a conventional television phosphor. The authors describe tests of these new phosphors

  14. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    Science.gov (United States)

    Weiss, Shimon [Pinole, CA; Schlamp, Michael C [Plainsboro, NJ; Alivisatos, A Paul [Oakland, CA

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  15. Rovibrational optical pumping of a molecular beam

    Science.gov (United States)

    Cournol, A.; Pillet, P.; Lignier, H.; Comparat, D.

    2018-03-01

    The preparation of molecules in well-defined internal states is essential for various studies in fundamental physics and physical chemistry. It is thus of particular interest to find methods that increase the brightness of molecular beams. Here, we report on rotational and vibrational pumpings of a supersonic beam of barium monofluoride molecules. With respect to previous works, the time scale of optical vibrational pumping has been greatly reduced by enhancing the spectral power density in the vicinity of the appropriate molecular transitions. We demonstrate a complete transfer of the rovibrational populations lying in v″=1 -3 into the vibrational ground-state v″=0 . Rotational pumping, which requires efficient vibrational pumping, has been also demonstrated. According to a Maxwell-Boltzmann description, the rotational temperature of our sample has been reduced by a factor of ˜8 . In this fashion, the population of the lowest rotational levels increased by more than one order of magnitude.

  16. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    Science.gov (United States)

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  17. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    International Nuclear Information System (INIS)

    Deri, R.J.

    2011-01-01

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  18. Excitonic bistabilities, instabilities and chaos in laser-pumped semiconductor

    International Nuclear Information System (INIS)

    Nguyen Ba An; Nguyen Trung Dan; Hoang Xuan Nguyen

    1992-07-01

    The Hurwitz criteria are used for a stability analysis of the steady state excitonic optical bistability curves in a semiconductor pumped by an external laser resonant with the exciton level. Besides the middle branch of the bistability curves which is unstable in the sense of the linear stability theory, we have found other domains of instability in the upper and lower branches of the steady state curves. Numerical results show that a possible route to chaos in the photon-exciton system is period-doubling self-oscillation process. The influence of the presence of free carriers that coexist with the excitons is also discussed. (author). 16 refs, 6 figs

  19. Optically pumped semiconductor lasers for atomic and molecular physics

    Science.gov (United States)

    Burd, S.; Leibfried, D.; Wilson, A. C.; Wineland, D. J.

    2015-03-01

    Experiments in atomic, molecular and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power and intensity stability. Optically pumped semiconductor lasers (OPSLs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. We are developing a source for laser cooling and spectroscopy of Mg+ ions at 280 nm, based on a frequency quadrupled OPSL with the gain chip fabricated at the ORC at Tampere Univ. of Technology, Finland. This OPSL system could serve as a prototype for many other sources used in atomic and molecular physics.

  20. Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

    Science.gov (United States)

    Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

    2016-03-01

    We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

  1. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

    Science.gov (United States)

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

    2010-02-01

    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  2. Optimum performance of electron beam pumped GaAs and GaN

    Science.gov (United States)

    Afify, M. S.; Moslem, W. M.; Hassouba, M. A.; Abu-El Hassan, A.

    2018-05-01

    This paper introduces a physical solution in order to overcome the damage to semiconductors, due to increasing temperature during the pumping process. For this purpose, we use quantum hydrodynamic fluid equations, including different quantum effects. This study concludes that nonlinear acoustic waves, in the form of soliton and shock-like (double layer) pulses, can propagate depending on the electron beam temperature and the streaming speed. Therefore, one can precisely tune the beam parameters in order to avoid such unfavorable noises that may lead to defects in semiconductors.

  3. Optical trapping with Bessel beams generated from semiconductor lasers

    International Nuclear Information System (INIS)

    Sokolovskii, G S; Dudelev, V V; Losev, S N; Soboleva, K K; Deryagin, A G; Kuchinskii, V I; Sibbett, W; Rafailov, E U

    2014-01-01

    In this paper, we study generation of Bessel beams from semiconductor lasers with high beam propagation parameter M 2 and their utilization for optical trapping and manipulation of microscopic particles including living cells. The demonstrated optical tweezing with diodegenerated Bessel beams paves the way to replace their vibronic-generated counterparts for a range of applications towards novel lab-on-a-chip configurations

  4. Modification of semiconductors with proton beams. A review

    International Nuclear Information System (INIS)

    Kozlovskii, V.V.; Lomasov, V.N.; Kozlov, V.A.

    2000-01-01

    Analysis is given of the progress in the modification of semiconductors by proton beams in fields such as proton-enhanced diffusion, ion-beam mixing, and formation of porous layers. This method of modification (doping) is shown to have high potential in monitoring the properties of semiconductor materials and designing devices of micro and nano electronics as compared to the conventional doping techniques such as thermal diffusion, epitaxy, and ion implantation

  5. Uses of laser optical pumping to produce polarized ion beams

    International Nuclear Information System (INIS)

    Anderson, L.W.

    1983-01-01

    Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H - or 3 He - ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams

  6. Copper vapour laser with an efficient semiconductor pump generator having comparable pump pulse and output pulse durations

    Energy Technology Data Exchange (ETDEWEB)

    Yurkin, A A [P N Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

    2016-03-31

    We report the results of experimental studies of a copper vapour laser with a semiconductor pump generator capable of forming virtually optimal pump pulses with a current rise steepness of about 40 A ns{sup -1} in a KULON LT-1.5CU active element. To maintain the operating temperature of the active element's channel, an additional heating pulsed oscillator is used. High efficiency of the pump generator is demonstrated. (lasers)

  7. Laser optical pumping of sodium and lithium atom beams

    International Nuclear Information System (INIS)

    Cusma, J.T.

    1983-01-01

    The method of optical pumping with a continuous wave dye laser has been used to produce beams of polarized 23 Na atoms and polarized 6 Li atoms. Optical pumping of a 23 Na atom beam using either a multimode dye laser or a single frequency dye laser with a double passed acousto-optic modulator results in electron spin polarizations of 0.70-0.90 and nuclear spin polarizations of 0.75-0.90. Optical pumping of a 6 Li atom beam using a single frequency dye laser either with an acousto-optic modulator or with Doppler shift pumping results in electron spin polarizations of 0.77-0.95 and nuclear spin polarizations greater than 0.90. The polarization of the atom beam is measured using either the laser induced fluorescence in an intermediate magnetic field or a 6-pole magnet to determine the occupation probabilities of the ground hyperfine sublevels following optical pumping. The results of the laser optical pumping experiments agree with the results of a rate equation analysis of the optical pumping process which predicts that nearly all atoms are transferred into a single sublevel for our values of laser intensity and interaction time. The use of laser optical pumping in a polarized ion source for nuclear scattering experiments is discussed. The laser optical pumping method provides a means of constructing an intense source of polarized Li and Na ions

  8. Lasing and ion beam doping of semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Geburt, Sebastian

    2013-01-31

    Semiconductor nanowires exhibit extraordinary optical properties like highly localized light emission, efficient waveguiding and light amplification. Even the stimulation of laser oscillations can be achieved at optical pumping, making nanowires promising for optoelectronic applications. For successful integration into future devices, three major key challenges have to be faced: (1) the understanding of the fundamental properties, (2) the modification of the emission characteristics and (3) the investigation of the efficiency-limiting factors. All key challenges are addressed in this thesis: (1) The fundamental properties of CdS nanowire have been investigated to uncover the size limits for photonic nanowire lasers. Laser oscillations were observed at room temperature and the emission characteristics were correlated to the morphology, which allowed the determination of a minimum diameter and length necessary for lasing. (2) The emission characteristics of ZnO nanowires have been successfully modified by ion beam doping with Co. The structural investigations revealed a good recovery of the ion induced damage in the crystal lattice. Optical activation of the implanted Co ions was achieved and an intense intra-3d-emission confirmed successful modification. (3) The temporal decay of excited luminescence centers strongly depends on the interplay of luminescent ions and defects, thus offering an approach to investigate the efficiency-limiting processes. Mn implanted ZnS nanowires were investigated, as the temporal decay of the incorporated Mn ions can be described by a Foerster energy transfer model modified for nanostructures. The defect concentration was varied systematically by several approaches and the model could successfully fit the transients in all cases. The emission properties of Tb implanted ZnS nanowires were investigated and the temporal decay of the intra-4f-emission could also be fitted by the model, proving its accuracy for an additional element.

  9. Lasing and ion beam doping of semiconductor nanowires

    International Nuclear Information System (INIS)

    Geburt, Sebastian

    2013-01-01

    Semiconductor nanowires exhibit extraordinary optical properties like highly localized light emission, efficient waveguiding and light amplification. Even the stimulation of laser oscillations can be achieved at optical pumping, making nanowires promising for optoelectronic applications. For successful integration into future devices, three major key challenges have to be faced: (1) the understanding of the fundamental properties, (2) the modification of the emission characteristics and (3) the investigation of the efficiency-limiting factors. All key challenges are addressed in this thesis: (1) The fundamental properties of CdS nanowire have been investigated to uncover the size limits for photonic nanowire lasers. Laser oscillations were observed at room temperature and the emission characteristics were correlated to the morphology, which allowed the determination of a minimum diameter and length necessary for lasing. (2) The emission characteristics of ZnO nanowires have been successfully modified by ion beam doping with Co. The structural investigations revealed a good recovery of the ion induced damage in the crystal lattice. Optical activation of the implanted Co ions was achieved and an intense intra-3d-emission confirmed successful modification. (3) The temporal decay of excited luminescence centers strongly depends on the interplay of luminescent ions and defects, thus offering an approach to investigate the efficiency-limiting processes. Mn implanted ZnS nanowires were investigated, as the temporal decay of the incorporated Mn ions can be described by a Foerster energy transfer model modified for nanostructures. The defect concentration was varied systematically by several approaches and the model could successfully fit the transients in all cases. The emission properties of Tb implanted ZnS nanowires were investigated and the temporal decay of the intra-4f-emission could also be fitted by the model, proving its accuracy for an additional element.

  10. Synchronous characterization of semiconductor microcavity laser beam.

    Science.gov (United States)

    Wang, T; Lippi, G L

    2015-06-01

    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

  11. Optically pumped polarized alkali atomic beams and targets

    International Nuclear Information System (INIS)

    Anderson, L.W.

    1984-01-01

    The optical pumping of 23 Na and 6 Li atomic beams is discussed. Experiments on the optical pumping of 23 Na atomic beams using either a single mode dye laser followed by a double passed acousto-optic modulator or a multimode dye laser are reported. The optical pumping of a 23 Na vapor target for use in a polarized H - ion source is discussed. Results on the use of viton as a wall coating with a long relaxation time are reported. 31 references, 6 figures, 3 tables

  12. Positron beam studies of transients in semiconductors

    International Nuclear Information System (INIS)

    Beling, C.D.; Ling, C.C.; Cheung, C.K.; Naik, P.S.; Zhang, J.D.; Fung, S.

    2006-01-01

    Vacancy-sensing positron deep level transient spectroscopy (PDLTS) is a positron beam-based technique that seeks to provide information on the electronic ionization levels of vacancy defects probed by the positron through the monitoring of thermal transients. The experimental discoveries leading to the concept of vacancy-sensing PDLTS are first reviewed. The major problem associated with this technique is discussed, namely the strong electric fields establish in the near surface region of the sample during the thermal transient which tend to sweep positrons into the contact with negligible defect trapping. New simulations are presented which suggest that under certain conditions a sufficient fraction of positrons may be trapped into ionizing defects rendering PDLTS technique workable. Some suggestions are made for techniques that might avoid the problematic electric field problem, such as optical-PDLTS where deep levels are populated using light and the use of high forward bias currents for trap filling

  13. Modeling and simulation performance of sucker rod beam pump

    Energy Technology Data Exchange (ETDEWEB)

    Aditsania, Annisa, E-mail: annisaaditsania@gmail.com [Department of Computational Sciences, Institut Teknologi Bandung (Indonesia); Rahmawati, Silvy Dewi, E-mail: silvyarahmawati@gmail.com; Sukarno, Pudjo, E-mail: psukarno@gmail.com [Department of Petroleum Engineering, Institut Teknologi Bandung (Indonesia); Soewono, Edy, E-mail: esoewono@math.itb.ac.id [Department of Mathematics, Institut Teknologi Bandung (Indonesia)

    2015-09-30

    Artificial lift is a mechanism to lift hydrocarbon, generally petroleum, from a well to surface. This is used in the case that the natural pressure from the reservoir has significantly decreased. Sucker rod beam pumping is a method of artificial lift. Sucker rod beam pump is modeled in this research as a function of geometry of the surface part, the size of sucker rod string, and fluid properties. Besides its length, sucker rod string also classified into tapered and un-tapered. At the beginning of this research, for easy modeling, the sucker rod string was assumed as un-tapered. The assumption proved non-realistic to use. Therefore, the tapered sucker rod string modeling needs building. The numerical solution of this sucker rod beam pump model is computed using finite difference method. The numerical result shows that the peak of polished rod load for sucker rod beam pump unit C-456-D-256-120, for non-tapered sucker rod string is 38504.2 lb, while for tapered rod string is 25723.3 lb. For that reason, to avoid the sucker rod string breaks due to the overload, the use of tapered sucker rod beam string is suggested in this research.

  14. Modeling and simulation performance of sucker rod beam pump

    International Nuclear Information System (INIS)

    Aditsania, Annisa; Rahmawati, Silvy Dewi; Sukarno, Pudjo; Soewono, Edy

    2015-01-01

    Artificial lift is a mechanism to lift hydrocarbon, generally petroleum, from a well to surface. This is used in the case that the natural pressure from the reservoir has significantly decreased. Sucker rod beam pumping is a method of artificial lift. Sucker rod beam pump is modeled in this research as a function of geometry of the surface part, the size of sucker rod string, and fluid properties. Besides its length, sucker rod string also classified into tapered and un-tapered. At the beginning of this research, for easy modeling, the sucker rod string was assumed as un-tapered. The assumption proved non-realistic to use. Therefore, the tapered sucker rod string modeling needs building. The numerical solution of this sucker rod beam pump model is computed using finite difference method. The numerical result shows that the peak of polished rod load for sucker rod beam pump unit C-456-D-256-120, for non-tapered sucker rod string is 38504.2 lb, while for tapered rod string is 25723.3 lb. For that reason, to avoid the sucker rod string breaks due to the overload, the use of tapered sucker rod beam string is suggested in this research

  15. Formation of helical electron beams by electrostatic pumping

    International Nuclear Information System (INIS)

    Barroso, J.J.; Spassovsky, L.P.; Stellati, C.

    1993-01-01

    A non-adiabatic gun for a 35 GHz, 100 kw gyrotron is presented. A 50 kV, 10 A laminar helical electron beam has been achieved with a perpendicular to parallel velocity ratio of 1.9. A non-adiabatic change of the pumping electric field is used to impart rotational velocity to the beam particles which are extracted at the cathode surface in a direction parallel to the guiding magnetic field. (author)

  16. Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

    International Nuclear Information System (INIS)

    McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

    1989-01-01

    This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

  17. Direct cryosorption pumping of an energetic hydrogen ion beam

    International Nuclear Information System (INIS)

    Schwenterly, S.W.; Ryan, P.M.; Tsai, C.C.

    1979-01-01

    Cryosorption pumps (CSP) are a prime candidate for the pumping of helium and deuterium-tritium (D-T) in tokamak divertor systems and may also see service in neutral beam injectors. However, the ability of a CSP to take high energy ions escaping from a plasma or neutral beam has not previously been demonstrated. In this study we arranged a 10-cm ion source of the type used in the Oak Ridge Tokamak (ORMAK) to inject a beam of ions directly into the inlet of a CSP. The pump contained two chevron baffles at 100K and 15K as well as a 15K cryosorption surface covered with a type 5A molecular sieve. The cryosurfaces were cooled by a closed-cycle helium refrigerator. For hydrogen ion pulses up to 11.5-keV energy and 1.3-A current, the pressure maintained during the pulse was only a few percent higher than that maintained with an equal flow of cold neutral gas. Pulse lengths of 100-300 ms were used. Calorimetric measurements showed that 40-60% of the I-V power was incident on the pump inlet. Cool-down and regeneration behavior of the pump will also be discussed

  18. Load beam unit replaceable inserts for dry coal extrusion pumps

    Science.gov (United States)

    Saunders, Timothy; Brady, John D.

    2012-11-13

    A track assembly for a particulate material extrusion pump according to an exemplary aspect of the present disclosure includes a link assembly with a roller bearing. An insert mounted to a load beam located such that the roller bearing contacts the insert.

  19. Runaway electron beam control for longitudinally pumped metal vapor lasers

    Science.gov (United States)

    Kolbychev, G. V.; Kolbycheva, P. D.

    1995-08-01

    Physics and techniques for producing of the pulsed runaway electron beams are considered. The main obstacle for increasing electron energies in the beams is revealed to be a self- breakdown of the e-gun's gas-filled diode. Two methods to suppress the self-breakdown and enhance the volumetric discharge producing the e-beam are offered and examined. Each of them provides 1.5 fold increase of the ceiling potential on the gun. The methods also give the ways to control several guns simultaneously. Resulting in the possibility of realizing the powerful longitudinal pumping of metal-vapor lasers on self-terminated transitions of atoms or ions.

  20. Experimental installation for excitation of semiconductors and dielectrics by picosecond pulsed electron beam and electric field

    International Nuclear Information System (INIS)

    Nasibov, A.S.; Berezhnoj, K.V.; Shapkin, P.V.; Reutova, A.G.; Shunajlov, S.A.; Yalandin, M.I.

    2009-01-01

    The experimental facility for shaping high-voltage pulses with amplitudes of 30-250 kV and durations of 100-500 ps and electron beams with a current density of up to 1000 A/cm -2 is described. The facility was built using the principle of energy compression of a pulse from a nanosecond high-voltage generator accompanied by the subsequent pulse sharpening and cutting. The setup is equipped with two test coaxial chambers for radiation excitation in semiconductor crystals by an electron beam or an electric field in air at atmospheric pressure and T = 300 K. Generation of laser radiation in the visible range under field and electron pumping was attained in ZnSSe, ZnSe, ZnCdS, and CdS (462, 480, 515, and 525 nm, respectively). Under the exposure to an electric field (up to 10 6 V x cm -1 ), the laser generation region is as large as 300-500 μm. The radiation divergence was within 5 Deg C. The maximum integral radiation power (6 kW at λ = 480 nm) was obtained under field pumping of a zinc selenide sample with a single dielectric mirror [ru

  1. Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

    Science.gov (United States)

    Siddique, M.; Jamil, M.; Rasheed, A.; Areeb, F.; Javed, Asif; Sumera, P.

    2018-01-01

    We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

  2. Mode structure of delay-coupled semiconductor lasers: influence of the pump current

    International Nuclear Information System (INIS)

    Erzgraeber, Hartmut; Krauskopf, Bernd; Lenstra, Daan

    2005-01-01

    We consider two identical, mutually delay-coupled semiconductor lasers and show that their compound laser modes (CLMs)-the basic continuous wave solutions-depend rather sensitively on the pump current of the lasers. Specifically, we show with figures and accompanying animations how the underlying CLM structure and the associated locking region, where both lasers operate stably with the same frequency, change as a function of the pump current. Our results provide a natural transition between rather different CLM structures that have been reported in the literature. Moreover, we demonstrate how the locking region as well as the different types of instabilities at its boundary depend on the pump current. This is of fundamental interest for the dynamics of coupled lasers and their possible application

  3. Optically pumped semiconductor lasers: Conception and characterization of a single mode source for Cesium atoms manipulation

    International Nuclear Information System (INIS)

    Cocquelin, B.

    2009-02-01

    Lasers currently used in atomic clocks or inertial sensors are suffering from a lack of power, narrow linewidth or compactness for future spatial missions. Optically pumped semiconductor lasers, which combine the approach of classical solid state lasers and the engineering of semiconductor laser, are considered here as a candidate to a metrological laser source dedicated to the manipulation of Cesium atoms in these instruments. These lasers have demonstrated high power laser emission in a circular single transverse mode, as well as single longitudinal mode emission, favoured by the semiconductor structure and the external cavity design. We study the definition and the characterization of a proper semiconductor structure for the cooling and the detection of Cesium atoms at 852 nm. A compact and robust prototype tunable on the Cesium D2 hyperfine structure is built. The laser frequency is locked to an atomic transition thanks to a saturated absorption setup. The emission spectral properties are investigated, with a particular attention to the laser frequency noise and the laser linewidth. Finally, we describe and model the thermal properties of the semiconductor structure, which enables the simulation of the laser power characteristic. The experimental parameters are optimised to obtain the maximum output power with our structure. Thanks to our analysis, we propose several ways to overcome these limitations, by reducing the structure heating. (authors)

  4. Electron beam pumped KrF lasers for fusion energy

    International Nuclear Information System (INIS)

    Sethian, J.D.; Friedman, M.; Giuliani, J.L. Jr.; Lehmberg, R.H.; Obenschain, S.P.; Kepple, P.; Wolford, M.; Hegeler, F.; Swanekamp, S.B.; Weidenheimer, D.; Welch, D.; Rose, D.V.; Searles, S.

    2003-01-01

    In this paper, we describe the development of electron beam pumped KrF lasers for inertial fusion energy. KrF lasers are an attractive driver for fusion, on account of their demonstrated very high beam quality, which is essential for reducing imprint in direct drive targets; their short wavelength (248 nm), which mitigates the growth of plasma instabilities; and their modular architecture, which reduces development costs. In this paper we present a basic overview of KrF laser technology as well as current research and development in three key areas: electron beam stability and transport; KrF kinetics and laser propagation; and pulsed power. The work will be cast in context of the two KrF lasers at the Naval Research Laboratory, The Nike Laser (5 kJ, single shot), and The Electra Laser (400-700 J repetitively pulsed)

  5. Large area electron beam pumped krypton fluoride laser amplifier

    International Nuclear Information System (INIS)

    Sethian, J.D.; Obenschain, S.P.; Gerber, K.A.; Pawley, C.J.; Serlin, V.; Sullivan, C.A.; Webster, W.; Deniz, A.V.; Lehecka, T.; McGeoch, M.W.; Altes, R.A.; Corcoran, P.A.; Smith, I.D.; Barr, O.C.

    1997-01-01

    Nike is a recently completed multi-kilojoule krypton fluoride (KrF) laser that has been built to study the physics of direct drive inertial confinement fusion. This paper describes in detail both the pulsed power and optical performance of the largest amplifier in the Nike laser, the 60 cm amplifier. This is a double pass, double sided, electron beam-pumped system that amplifies the laser beam from an input of 50 J to an output of up to 5 kJ. It has an optical aperture of 60 cm x 60 cm and a gain length of 200 cm. The two electron beams are 60 cm high x 200 cm wide, have a voltage of 640 kV, a current of 540 kA, and a flat top power pulse duration of 250 ns. A 2 kG magnetic field is used to guide the beams and prevent self-pinching. Each electron beam is produced by its own Marx/pulse forming line system. The amplifier has been fully integrated into the Nike system and is used on a daily basis for laser-target experiments. copyright 1997 American Institute of Physics

  6. Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

    Science.gov (United States)

    Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

    2013-05-28

    An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Fine structure and optical pumping of spins in individual semiconductor quantum dots

    Science.gov (United States)

    Bracker, Allan S.; Gammon, Daniel; Korenev, Vladimir L.

    2008-11-01

    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information.

  8. Fine structure and optical pumping of spins in individual semiconductor quantum dots

    International Nuclear Information System (INIS)

    Bracker, Allan S; Gammon, Daniel; Korenev, Vladimir L

    2008-01-01

    We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information

  9. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

  10. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  11. Electron-beam pumping of visible and ultraviolet gas lasers

    International Nuclear Information System (INIS)

    Bradley, L.P.

    1975-01-01

    Several techniques for using direct electron-pumping of gas lasers are reviewed. The primary objective is to categorize pump geometries and to give guidelines for gun selection and pulser design. Examples and application of pump technology are given

  12. A Phase-Controlled Optical Parametric Amplifier Pumped by Two Phase-Distorted Laser Beams

    International Nuclear Information System (INIS)

    Hong-Yan, Ren; Lie-Jia, Qian; Peng, Yuan; He-Yuan, Zhu; Dian-Yuan, Fan

    2010-01-01

    We theoretically study the phase characteristic of optical parametric amplification (OPA) or chirped pulse OPA (OPCPA) pumped by two phase-distorted laser beams. In the two-beam-pumped optical parametric amplification (TBOPA), due to spatial walk-off, both of the pump phase distortions will be partly transferred to signal in a single crystal so as to degrade the signal beam-quality, which will be more serious in high-energy OPCPA. An OPA configuration with a walkoff-compensated crystal pair is demonstrated for reducing the signal phase distortion experienced in the first stage and ensuring the signal phase independent of two pump phase distortions through the second crystal, hence maintaining the signal beam-quality. Such a TBOPA is similar to the conventional quantum laser amplifier by means of eliminating its sensitivity to the phase and number of the pump beams

  13. Spatial modification of laser beam under the influence of Λ-type strong pump

    International Nuclear Information System (INIS)

    Lee, Won Kyu; Noh, Young Chul; Jeon, Jin Ho; Lee, Jai Hyung; Chang, Joon Sung

    1999-01-01

    The laser beam propagating through the resonant medium undergo severe deformation because of nonlinear interaction such as self-focusing, self-defocusing, etc. When strong pump beam coexists with the probe beam, propagation characteristics can be changed. We use samarium (Sm) vapor as the nonlinear medium. Probe laser is tuned around 4f 6 6s 27 F 0 -> 4f 6 ( 7 F)6s6p( 1 P 0 ) transition line of Sm (561.601 nm) and the pump laser is tuned around 4f 6 6s 27 F 1 -> 4f 6 ( 7 F)6s6p( 1 P 0 ) transition line of Sm (572.019 nm). The probe and the pump beams are Λ-type configuration. The transmission of the probe beam is changed as the intensity and the detuning of the pump beam are varied. The degree of self-focusing is also modified. (author)

  14. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

    Science.gov (United States)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

    2013-11-18

    Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

  15. Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer

    DEFF Research Database (Denmark)

    Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao

    2013-01-01

    material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled......Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain......-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different...

  16. Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

    International Nuclear Information System (INIS)

    Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

    2005-01-01

    A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

  17. Hydrodynamic pumping of a quantum Fermi liquid in a semiconductor heterostructure

    Science.gov (United States)

    Heremans, J. J.; Kantha, D.; Chen, H.; Govorov, A. O.

    2003-03-01

    We present experimental results for a pumping mechanism observed in mesoscopic structures patterned on two-dimensional electron systems in GaAs/AlGaAs heterostructures. The experiments are performed at low temperatures, in the ballistic regime. The effect is observed as a voltage or current signal corresponding to carrier extraction from sub-micron sized apertures, when these apertures are swept by a beam of ballistic electrons. The carrier extraction, phenomenologically reminiscent of the Bernoulli pumping effect in classical fluids, has been observed in various geometries. We ascertained linearity between measured voltage and injected current in all experiments, thereby excluding rectification effects. The linear response, however, points to a fundamental difference from the Bernoulli effect in classical liquids, where the response is nonlinear and quadratic in terms of the velocity. The temperature dependence of the effect will also be presented. We thank M. Shayegan (Princeton University) for the heterostructure growth, and acknowledge support from NSF DMR-0094055.

  18. Effect of pump-beam conditions on dual polarization oscillations in a microchip Nd:GdVO{sub 4} laser

    Energy Technology Data Exchange (ETDEWEB)

    Lin, C-C; Jiang, I-M [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Ko, J-Y; Tsai, K-T; Cheng, Y-T; Ho, M-C, E-mail: jyko@nknucc.nknu.edu.t [Department of Physics, National Kaohsiung Normal University, Kaohsiung 824, Taiwan (China)

    2009-08-28

    This study investigated the input-output characteristics of a laser-diode-end-pumped microchip Nd:GdVO{sub 4} laser under different pump-beam focusing conditions by varying the magnifications of the microscope objective lenses and pump-beam positions on a chip. Dual-polarization oscillations were generated in the entire pump region using pumping conditions associated with different temperature gradients.

  19. Diode pumped 1kHz high power Nd:YAG laser with excellent beam quality

    NARCIS (Netherlands)

    Godfried, Herman; Godfried, H.P; Offerhaus, Herman L.

    1997-01-01

    The design and operation of a one kilohertz diode pumped all solid-state Nd:YAG master oscillator power amplifier system with a phase conjugate mirror is presented. The setup allows high power scaling without reduction in beam quality.

  20. Closely spaced mirror pair for reshaping and homogenizing pump beams in laser amplifiers

    International Nuclear Information System (INIS)

    Bass, I.L.

    1992-12-01

    Channeling a laser beam by multiple reflections between two closely-spaced, parallel or nearly parallel mirrors, serves to reshape and homogenize the beam at the output gap between the mirrors. Application of this device to improve the spatial overlap of a copper laser pump beam with the signal beam in a dye laser amplifier is described. This technique has been applied to the AVLIS program at the Lawrence Livermore National Laboratory

  1. Development of distributed ion pumps for g-2 beam vacuum system

    Energy Technology Data Exchange (ETDEWEB)

    Hseuh, H.C.; Mapes, M.; Snydstrup, L.

    1993-06-01

    Distributed ion pumps (DIPs) will be used for the beam vacuum system of the g-2 muon storage ring. The magnetic field intensity and alignment angle at the DIP locations are not uniform. The pumping behavior of several different ion pump elements under this non-uniform magnetic field has been studied. The results are compared with the theoretical predictions. Based on these results, the optimum design of the g-2 DIPs has been developed.

  2. Development of distributed ion pumps for g-2 beam vacuum system

    Energy Technology Data Exchange (ETDEWEB)

    Hseuh, H.C.; Mapes, M.; Snydstrup, L.

    1993-01-01

    Distributed ion pumps (DIPs) will be used for the beam vacuum system of the g-2 muon storage ring. The magnetic field intensity and alignment angle at the DIP locations are not uniform. The pumping behavior of several different ion pump elements under this non-uniform magnetic field has been studied. The results are compared with the theoretical predictions. Based on these results, the optimum design of the g-2 DIPs has been developed.

  3. Effects of ion beam irradiation on semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Nashiyama, Isamu; Hirao, Toshio; Itoh, Hisayoshi; Ohshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods such as a scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. (author)

  4. Control and calculation of the titanium sublimation pumping speed and re-ionisation in the MAST neutral beam injectors

    International Nuclear Information System (INIS)

    McAdams, R.

    2015-01-01

    Highlights: • The titanium sublimation pumps for the MAST neutral beam injectors are described. • Evaporation regimes are established to give constant pumping speed for the titanium sublimation pumps. • The MCNP code is used to calculate the pumping speeds and gas profiles in the neutral beam injectors. • The gas profiles are then used to calculate the level of re-ionisation in the beamline. - Abstract: A high pumping speed is required in neutral beam injectors to minimise re-ionisation of the neutral beams. The neutral beam injectors on MAST use titanium sublimation pumps. These pumps do not have a constant pumping speed; their pumping speed depends on the gettering surface history and on both the integrated and applied gas load. In this paper we describe a method of maintaining a constant pumping speed, through different evaporation schemes, specifically suitable for operations of the MAST neutral beam injector beamlines for both short and relatively long beam pulses by measurement of the pressure in the beamline. In addition the MCNP code is then used to calculate the pumping speed and gas profile in the beamline by adjusting the input pumping speed to match the measured pressure. This allows the resulting gas profile to be used for calculation of the re-ionisation levels and an example is given

  5. Production of polarized negative deuterium ion beam with dual optical pumping in KEK

    Energy Technology Data Exchange (ETDEWEB)

    Kinsho, M.; Ikegami, K.; Takagi, A. [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan); Mori, Y.

    1997-02-01

    To obtain highly nuclear-spin vector polarized negative deuterium ion beam, a dual optically pumped polarized negative deuterium ion source has been developed at KEK. It is possible to select a pure nuclear-spin state with this scheme, and negative deuterium ion beam with 100% nuclear-spin vector polarization can be produced in principle. We have obtained about 70% of nuclear-spin vector polarized negative deuterium ion beam so far. This result may open up a new possibilities for the optically pumped polarized ion source. (author)

  6. Cryogenic Semiconductor Detectors: Simulation of Signal Formation & Irradiation Beam Test

    CERN Document Server

    AUTHOR|(CDS)2091318; Stamoulis, G; Vavougios, D

    The Beam Loss Monitoring system of the Large Hadron Collider is responsible for the pro- tection of the machine from damage and for the prevention of a magnet quench. Near the interaction points of the LHC, in the triplet magnets area, the BLMs are sensitive to the collision debris, limiting their ability to distinguish beam loss signal from signal caused due to the collision products. Placing silicon & diamond detectors inside the cold mass of the mag- nets, in liquid helium temperatures, would provide significant improvement to the precision of the measurement of the energy deposition in the superconducting coil of the magnet. To further study the signal formation and the shape of the transient current pulses of the aforementioned detectors in cryogenic temperatures, a simulation application has been developed. The application provides a fast way of determining the electric field components inside the detectors bulk and then introduces an initial charge distribution based on the properties of the radiat...

  7. Analysis of the pump-beam path in corner-pumped slab laser

    International Nuclear Information System (INIS)

    Chen Li; Qiang Liu; Mali Gong; Gang Chen; Ping Yan

    2007-01-01

    The propagation of the pump radiation in active slab elements is considered. Conditions of the total internal reflection of the pump radiation are obtained, and are used to construct a series of graphical illustrations of reflection characteristics of different active elements. (control of laser radiation parameters)

  8. Analysis of defects near the surface and the interface of semiconductors by monoenergetic positron beam

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro

    1989-01-01

    A monoenergetic low-speed positron beam line is constructed and a study is made on defects near the surface and the interface of semiconductors by using the beam line. Sodium-22 is used as beam source. Ion implantation, though being an essential technique for semiconductor integrated circuit production, can introduce lattice defects, affecting the yield and reliability of the resultant semiconductor devices. Some observations are made on the dependence of the Doppler broadening on the depth, and the ΔS-E relationship in P + -ion implanted SiO 2 (43nm)-Si. These observations demonstrate that monoenergetic positron beam is useful to detect hole-type defects resulting from ion implantation over a very wide range of defect density. Another study is made for the detection of defects near an interface. Positrons are expected to drift when left in an electric field with a gradient. Observations made here show that positrons can be concentrated at any desired interface by introducing an electric field intensity gradient in the oxide. This process also serves for accurate measurement of the electronic structure at the interface, and the effect of ion implantation and radiations on the interface. (N.K.)

  9. Collisional pumping for the production of intense spin-polarized neutral beams: target considerations. Revision

    International Nuclear Information System (INIS)

    Stearns, J.W.; Burrell, C.F.; Kaplan, S.N.; Pyle, R.V.; Ruby, L.; Schlachter, A.S.

    1985-04-01

    Polarized beams at intensity levels heretofore not considered feasible have recently been proposed for heating and fueling fusion plasmas. Polarized-beam fueling could increase fusion rates by 50% as well as allow control of the directionality of the fusion products. A process which we have recently described, and called collisional pumping, promises to produce beams of polarized ions vastly more intense than producible by current methods

  10. Enhancement of photorefractive two wave mixing gain with a Bessel pump beam

    International Nuclear Information System (INIS)

    Biswas, Dhruba J.; Padma Nilaya, J.; Danailov, Miltcho, B.

    2001-07-01

    The performance of a photo-refractive amplifier has been shown to greatly improve when a diffraction free beam is employed as the pump source. It has been established experimentally that this behaviour owes primarily to the ability of this beam to propagate in the photo-refractive crystal will less fanning. A qualitative explanation for the reduction of fanning with Bessel beam is offered. (author)

  11. LD-pumped erbium and neodymium lasers with high energy and output beam quality

    Science.gov (United States)

    Kabanov, Vladimir V.; Bezyazychnaya, Tatiana V.; Bogdanovich, Maxim V.; Grigor'ev, Alexandr V.; Lebiadok, Yahor V.; Lepchenkov, Kirill V.; Ryabtsev, Andrew G.; Ryabtsev, Gennadii I.; Shchemelev, Maxim A.

    2013-05-01

    Physical and fabrication peculiarities which provide the high output energy and beam quality for the diode pumped erbium glass and Nd:YAG lasers are considered. Developed design approach allow to make passively Q-switched erbium glass eye-safe portable laser sources with output energy 8 - 12 mJ (output pulse duration is less than 25 ns, pulse repetition rate up to 5 Hz) and beam quality M2 less than 1.3. To reach these values the erbium laser pump unit parameters were optimized also. Namely, for the powerful laser diode arrays the optimal near-field fill-factor, output mirror reflectivity and heterostructure properties were determined. Construction of advanced diode and solid-state lasers as well as the optical properties of the active element and the pump unit make possible the lasing within a rather wide temperature interval (e.g. from minus forty till plus sixty Celsius degree) without application of water-based chillers. The transversally pumped Nd:YAG laser output beam uniformity was investigated depending on the active element (AE) pump conditions. In particular, to enhance the pump uniformity within AE volume, a special layer which practically doesn't absorb the pump radiation but effectively scatters the pump and lasing beams, was used. Application of such layer results in amplified spontaneous emission suppression and improvement of the laser output beam uniformity. The carried out investigations allow us to fabricate the solid-state Nd:YAG lasers (1064 nm) with the output energy up to 420 mJ at the pulse repetition rate up to 30 Hz and the output energy up to 100 mJ at the pulse repetition rate of of 100 Hz. Also the laser sources with following characteristics: 35 mJ, 30 Hz (266 nm); 60 mJ, 30 Hz (355 nm); 100 mJ, 30 Hz (532 nm) were manufactured on the base of the developed Nd:YAG quantrons.

  12. The use of GaSe semiconductor detectors for monitoring high energy muon beams

    CERN Document Server

    Mancini, A M; Murri, R; Quirini, A; Rizzo, A; Vasanelli, L

    1976-01-01

    GaSe semiconductor detectors have been successfully tested during one year for monitoring muon beams in the GeV range in the neutrino experiment at CERN. Their performances are comparable with those of commercial Si surface barrier detectors for this particular application. Crystal growth, detector fabrication and characterization are briefly described. Various advantages (cost, ruggedness, resistance to radiation damage, manufacturing simplicity, etc.) are discussed. (8 refs).

  13. 1-kilowatt CW all-fiber laser oscillator pumped with wavelength-beam-combined diode stacks.

    Science.gov (United States)

    Xiao, Y; Brunet, F; Kanskar, M; Faucher, M; Wetter, A; Holehouse, N

    2012-01-30

    We have demonstrated a monolithic cladding-pumped ytterbium-doped single all-fiber laser oscillator generating 1 kW of CW signal power at 1080 nm with 71% slope efficiency and near diffraction-limited beam quality. Fiber components were highly integrated on "spliceless" passive fibers to promote laser efficiency and alleviate non-linear effects. The laser was pumped through a 7:1 pump combiner with seven 200-W 91x nm fiber-pigtailed wavelength-beam-combined diode-stack modules. The signal power of such a single all-fiber laser oscillator showed no evidence of roll-over, and the highest output was limited only by available pump power.

  14. Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers

    Science.gov (United States)

    Zeng, Linfei

    This thesis proposes the molecular beam epitaxy (MBE) growth and characterization of a new Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se based semiconductor materials system on InP substrates for visible light emitting diodes (LED) and lasers. The growth conditions for lattice-matched Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se layers with the desired bandgap have been established and optimized. A chemical etching technique to measure the defect density of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se materials has been established. The accuracy of this method for revealing stacking faults and dislocations was verified by plan-view TEM. Using the techniques such as III-V buffer layer, Zn-irradiation, low-temperature growth, ZnCdSe interfacial layer and growth interruption to improve the quality of the interface of III-V and II-VI, the material quality of Znsb{x}Cdsb{y}Mgsb{(1-x-y)}Se has been improved dramatically. Defect density has been reduced from 10sp{10}\\ cmsp{-2} to {˜}5×10sp4\\ cmsp{-2}. The properties of this material system such as the quality and strain state in the epilayer, the dependence of bandgap on temperature, and the band offset have been studied by using double crystal x-ray diffraction, photoluminescence and capacitance voltage measurements. The ZnCdSe/ZnCdMgSe based quantum well (QW) structures have been grown and studied. Optically pumped lasing with emission range from red to blue has been obtained from ZnCdSe/ZnCdMgSe based separate-confinement single QW laser structures. The results demonstrate the potential for these materials as integrated full color display devices. Preliminary studies of the degradation behavior of ZnCdSe/ZnCdMgSe QW were performed. No dark line defects (DLDs) were observed during the degradation. A very strong room temperature differential negative resistance behavior was observed from Al/Znsb{0.61}Cdsb{0.39}Se/nsp+-InP devices, which is useful in millimeter-wave applications. We also found that these devices can be set to either in highly conductive or

  15. Apparatus for servicing a jet pump hold down beam in a nuclear reactor

    International Nuclear Information System (INIS)

    Howell, D.A.; Hydeman, J.E.; Slater, J.L.; Bodnar, R.J.; Golick, L.R.; Sckera, R.S.; Roth, C.H. Jr.

    1991-01-01

    This patent describes an apparatus for replacing the hold down beam of a fluid circulating jet pump mounted in a nuclear reactor, the hold down beam having a beam body, a pair of opposed beam tabs and a pair of opposed beam positioning trunnions extending outwardly from the beam body. It comprises a housing having a lower surface configured to be positionable over the body of the hold down beam; means coupled to the housing for engaging the beam trunnions and securing the beam body against the lower surface of the housing; means coupled to the housing for depressing the beam tabs while the beam body is secured against the lower surface of the housing; means coupled to the trunnion engaging means and the beam tab depressing means for selectively actuating the trunnion engaging means and the beam tab depressing means from a position remote from the nuclear reactor; and means connectable to the housing for selectively changing the directional orientation of the beam

  16. End-pumped Nd:YVO4 laser with reduced thermal lensing via the use of a ring-shaped pump beam.

    Science.gov (United States)

    Lin, Di; Andrew Clarkson, W

    2017-08-01

    A simple approach for alleviating thermal lensing in end-pumped solid-state lasers using a pump beam with a ring-shaped intensity distribution to decrease the radial temperature gradient is described. This scheme has been implemented in a diode-end-pumped Nd:YVO 4 laser yielding 14 W of TEM 00 output at 1.064 μm with a corresponding slope efficiency of 53% and a beam propagation factor (M 2 ) of 1.08 limited by available pump power. By comparison, the same laser design with a conventional quasi-top-hat pump beam profile of approximately equal radial extent yielded only 9 W of output before the power rolled over due to thermal lensing. Further investigation with the aid of a probe beam revealed that the thermal lens power was ∼30% smaller for the ring-shaped pump beam compared to the quasi-top-hat beam. The implications for further power scaling in end-pumped laser configurations are considered.

  17. Pump-probe spectroscopy of spin-injection dynamics in double quantum wells of diluted magnetic semiconductor

    International Nuclear Information System (INIS)

    Nishibayashi, K.; Aoshima, I.; Souma, I.; Murayama, A.; Oka, Y.

    2006-01-01

    Dynamics of spin injection has been investigated in a double quantum well (DQW) composed of a diluted magnetic semiconductor by the pump-probe transient absorption spectroscopy in magnetic field. The DQW consists of a non-magnetic well (NMW) of CdTe and a magnetic well (MW) of Cd 0.92 Mn 0.08 Te. The MW shows a transient absorption saturation in the exciton band for more than 200 ps after the optical pumping, while the exciton photoluminescence does not arise from the MW. In the NMW, the circular polarization degree of the transient absorption saturation shows an increase with increasing time. The results are interpreted by the individual tunneling of spin-polarized electrons and holes from the MW to the NMW with different tunneling times. Depolarization processes of the carrier spins in the MW and the NMW are also discussed

  18. Giant narrowband twin-beam generation along the pump-energy propagation direction

    Science.gov (United States)

    Pérez, Angela M.; Spasibko, Kirill Yu; Sharapova, Polina R.; Tikhonova, Olga V.; Leuchs, Gerd; Chekhova, Maria V.

    2015-07-01

    Walk-off effects, originating from the difference between the group and phase velocities, limit the efficiency of nonlinear optical interactions. While transverse walk-off can be eliminated by proper medium engineering, longitudinal walk-off is harder to avoid. In particular, ultrafast twin-beam generation via pulsed parametric down-conversion and four-wave mixing is only possible in short crystals or fibres. Here we show that in high-gain parametric down-conversion, one can overcome the destructive role of both effects and even turn them into useful tools for shaping the emission. In our experiment, one of the twin beams is emitted along the pump Poynting vector or its group velocity matches that of the pump. The result is markedly enhanced generation of both twin beams, with the simultaneous narrowing of angular and frequency spectrum. The effect will enable efficient generation of ultrafast twin photons and beams in cavities, waveguides and whispering-gallery mode resonators.

  19. Assessment of load of beam-balanced pumping units by electric motor power indicators

    Directory of Open Access Journals (Sweden)

    Д. И. Шишлянников

    2017-10-01

    Full Text Available The results of experimental studies on the loading of beam-balanced pumping units (BP of sucker rod- pumping equipment (SRPE are presented. It is noted that the key factor that has the most significant effect causing the SRPE failure is the balance of the beam pumping unit, which determines the amount of specific energy consumption for the rise of reservoir fluid and the level of dynamic loads on the machine units. The urgency of using software-recording systems for estimating the loading of units of oil field pumping installations is substantiated. The principle of operation and design of the «AKD-SK» software recording system is described. The prospects of using this method for controlling the performance parameters and evaluating the technical state of the sicker rod-pumping units is proved on the basis of an analysis of the magnitude and nature of the changes in the loads of drive motors determined by the registration of the instantaneous values of the consumed power. The main provisions of the methodology for analyzing the watt-meters of drive motors of the sucker rod-pumping units are outlined. The nature of the manifestation of the main defects of submersible pumps and beam-balanced pumping units is described. The results of pilot-industrial tests of the beam-balanced pumping units equipped with advanced permanent magnet motors and intelligent control stations are presented. It is proved that the use of permanent magnet motors allows to reduce the specific energy consumption for the rise of reservoir fluid, which increases the efficiency of the SRPE.However, the presence of transient processes and generator operating modes of the permanent magnet motors results in the occurrence of significant dynamic loads, which, due to the rigid fixing of the rotor of magnet motor on the reducer shaft, negatively affect the life of the gearbox bearings. It has been shown that the lack of its own bearings in the tested motors causes a high probability

  20. Investigation of pump-to-seed beam matching on output features of Rb and Cs vapor laser amplifiers

    Science.gov (United States)

    Shen, Binglin; Huang, Jinghua; Xu, Xingqi; Xia, Chunsheng; Pan, Bailiang

    2018-05-01

    Taking into account the beam radii of pump light and seed laser along the entire length of the cell and their intensities in the cross section, a physical model with ordinary differential equation methods for alkali vapor amplifiers is established. Applied to the reported optically pumped Rb and diode-pumped Cs vapor amplifiers, the model shows good agreement between the calculated and measured dependence of amplified power on the seed power. A larger width of the spontaneous emission region as compared to the widths of pump absorption and laser emission regions, which will result in very high energy losses, is observed in the cell. Influence of pump and seed beam waists on output performance is calculated, showing that the pump and seed beam should match each other not only in shape but also in size, thus an optimal combination of beam radii is very important for efficient operation of alkali vapor amplifiers.

  1. Orbital angular momentum correlations with a phase-flipped Gaussian mode pump beam

    CSIR Research Space (South Africa)

    Romero, J

    2012-08-01

    Full Text Available -1 Journal of Optics August 2012/ Vol. 14. No 8 Orbital angular momentum correlations with a phase- flipped Gaussian mode pump beam J Romero1,2, D Giovannini1, M G McLaren3,4, E J Galvez5, A Forbes3,4 and M J Padgett1 1 School of Physics...

  2. Concept of the solar-pumped laser-photovoltaics combined system and its application to laser beam power feeding to electric vehicles

    Science.gov (United States)

    Motohiro, Tomoyoshi; Takeda, Yasuhiko; Ito, Hiroshi; Hasegawa, Kazuo; Ikesue, Akio; Ichikawa, Tadashi; Higuchi, Kazuo; Ichiki, Akihisa; Mizuno, Shintaro; Ito, Tadashi; Yamada, Noboru; Nath Luitel, Hom; Kajino, Tsutomu; Terazawa, Hidetaka; Takimoto, Satoshi; Watanabe, Kemmei

    2017-08-01

    We have developed a compact solar-pumped laser (µSPL) employing an off-axis parabolic mirror with an aperture of 76.2 mm diameter and an yttrium aluminum garnet (YAG) ceramic rod of φ1 mm × 10 mm doped with 1% Nd and 0.1% Cr as a laser medium. The laser oscillation wavelength of 1.06 µm, just below the optical absorption edge of Si cells, is suitable for photoelectric conversion with minimal thermal loss. The concept of laser beam power feeding to an electric vehicle equipped with a photovoltaic panel on the roof was proposed by Ueda in 2010, in which the electricity generated by solar panels over the road is utilized to drive a semiconductor laser located on each traffic signal along the road. By substituting this solar-electricity-driven semiconductor laser with a solar-pumped laser, the energy loss of over 50% in converting the solar electricity to a laser beam can be eliminated. The overall feasibility of this system in an urban area such as Tokyo was investigated.

  3. A High-Energy Good-Beam-Quality Krypton-Lamp-Pumped Nd:YAG Solid-State Laser with One Pump Cavity

    Institute of Scientific and Technical Information of China (English)

    LIU Xue-Sheng; WANG Zhi-Yong; YAN Xin; CAO Ying-Hua

    2008-01-01

    We investigate a high-energy good-beam-quality krypton-lamp-pumped pulsed Nd:YAG solid-state laser with one pump cavity.The symmetrical resonator laser is developed and is rated at 80 J with beam parameter product 12mm mrad.The total system electro-optics efficiency of the lamp-pumped YAG laser is as high as 3.3% and the stability of output energy is ±2% with pulse width tunable between 0.1 ms and 10ms.The experimental results are consistent with the theoretical analysis and simulation.

  4. Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method

    International Nuclear Information System (INIS)

    Xu Xingsheng; Chen Hongda; Xiong Zhigang; Jin Aizi; Gu Changzhi; Cheng Bingying; Zhang Daozhong

    2007-01-01

    In this paper, we introduced the fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam machine, it shows that the method of focused-ion beam can fabricate two-dimensional photonic crystal and photonic crystal device efficiently, and the quality of the fabricated photonic crystal is high. Using the focused-ion beam method, we fabricate photonic crystal wavelength division multiplexer, and its characteristics are analyzed

  5. Wellhead gas compression extends life of beam-pumped wells

    International Nuclear Information System (INIS)

    Sherry, M.J.; Fairchild, P.W.

    1992-01-01

    This paper reports that operators of marginal oil and gas wells often can avoid having to shut them in by compressing gas from the back side of the casing at the well head and delivering it into the flowline. This process can reduce the back pressure at the face of the producing formation, which allows additional oil and gas to be produced and extends the economical reserves. Small, low-horsepower stationary compressors or a walking beam compressor (WBC) may be used for this purpose. A portable compressor test unit recently has been employed to evaluate wells that are possible candidates for wellhead compression as another cost cutting measure

  6. Pump-beam-instability limits to Raman-gain-doublet ''fast-light'' pulse propagation

    International Nuclear Information System (INIS)

    Stenner, Michael D.; Gauthier, Daniel J.

    2003-01-01

    We investigate the behavior of a system for generating ''fast-light'' pulses in which a bichromatic Raman pumping beam is used to generate optical gain at two frequencies and a region of anomalous dispersion between them. It is expected that increasing the gain will increase the pulse advancement. However, as the gain increases, the pumping field becomes increasingly distorted, effectively limiting the pulse advancement. We observe as much as 12% of the input pump power converted to orthogonal polarization, broadening of the initially bichromatic pump field (25 MHz initial frequency separation) to more than 2.5 GHz, and a temporal collapse of the pump beam into an erratic train of sub-500-ps pulses. The instability is attributed to the combined effects of the cross modulation instability and stimulated Raman scattering. Extreme distortion of an injected pulse that should (absent the instability) experience an advancement of 21% of its width is observed. We conclude that the fast-light pulse advancement is limited to just a few percent of the pulse width using this pulse advancement technique. The limitation imposed by the instability is important because careful study of the information velocity in fast-light pulses requires that pulse advancement be large enough to distinguish the velocities of different pulse features. Possible methods for achieving pulse advancement by avoiding the distortion caused by the instability are discussed

  7. Electrostatic mechanism of shaping the wave micro-relief on the surface of a semiconductor, sputtered by an ion beam

    International Nuclear Information System (INIS)

    Grigor'ev, A.I.

    2000-01-01

    The effect of the electric field formed due to the surface charging, is not accounted for in the weakly-developed theoretical models for the ordered micro-relief formation on the surface of a semiconductor under the impact of an ion beam. It is shown, that the problem on modeling the physical mechanism of forming the ordered wave micro-relief on the semiconductor surface under the impact of a high-energy ion beam may be interpreted as an electrostatic one [ru

  8. Nonlinear effects in optical pumping of a cold and slow atomic beam

    KAUST Repository

    Porfido, N.

    2015-10-12

    By photoionizing hyperfine (HF) levels of the Cs state 62P3/2 in a slow and cold atom beam, we find how their population depends on the excitation laser power. The long time (around 180μs) spent by the slow atoms inside the resonant laser beam is large enough to enable exploration of a unique atom-light interaction regime heavily affected by time-dependent optical pumping. We demonstrate that, under such conditions, the onset of nonlinear effects in the population dynamics and optical pumping occurs at excitation laser intensities much smaller than the conventional respective saturation values. The evolution of population within the HF structure is calculated by numerical integration of the multilevel optical Bloch equations. The agreement between numerical results and experiment outcomes is excellent. All main features in the experimental findings are explained by the occurrence of “dark” and “bright” resonances leading to power-dependent branching coefficients.

  9. Analysis of lifting beam and redesigned lifting lugs for 241-AZ-01A decant pump

    International Nuclear Information System (INIS)

    Coverdell, B.L.

    1994-01-01

    This supporting document details calculations for the proper design of a lifting beam and redesigned lifting lugs for the 241AZO1A decant pump. This design is in accordance with Standard Architectural-Civil Design Criteria, Design Loads for Facilities (DOE-RL 1989) and is safety class three. The design and fabrication is in accordance with American Institute of Steel Construction, Manual of Steel Construction, (AISC, 1989) and the Hanford Hoisting and Rigging Manual (DOE-RL 1993)

  10. Fiber-based modulated optical reflectance configuration allowing for offset pump and probe beams

    Science.gov (United States)

    Fleming, A.; Folsom, C.; Jensen, C.; Ban, H.

    2016-12-01

    A new fiber-based modulated optical reflectance configuration is developed in this work. The technique maintains the fiber-based heating laser (pump) and detection laser (probe) in close proximity at a fixed separation distance in a ceramic ferrule. The pump beam periodically heats the sample inducing thermal waves into the sample. The probe beam measures the temperature response at a known distance from the pump beam over a range of heating modulation frequencies. The thermal diffusivity of the sample may be calculated from the phase response between the input heat flux and the temperature response of a sample having a reflective surface. The unique measurement configuration is ideal for in situ measurements and has many advantages for laboratory-based systems. The design and development of the system are reported along with theoretical justification for the experimental design. The thermal diffusivities of Ge and SiC are measured and found to be within 10% of reported literature values. The diffusivity for SiO2 is measured with a relative difference of approximately 100% from the literature value when the ferrule is in contact with the sample. An additional measurement was made on the SiO2 sample with the ferrule not in contact resulting in a difference of less than 2% from the literature value. The difference in the SiO2 measurement when the ferrule is in contact with the sample is likely due to a parallel heat transfer path through the dual-fiber ferrule assembly.

  11. Thermally induced diffraction losses for a Gaussian pump beam and optimization of the mode-to-pump ratio in an end-pumped Nd:GdVO4 laser

    International Nuclear Information System (INIS)

    Wang, Y T; Li, W J; Pan, L L; Yu, J T; Zhang, R H

    2013-01-01

    The analytical model of thermally induced diffraction losses for a Gaussian pump beam are derived as functions of the mode-to-pump ratio and pump power in end-pumped Nd-doped lasers considering the energy transfer upconversion effects. The mode-to-pump ratio is optimized based on it. The results show that the optimum mode-to-pump ratio with the thermally induced diffraction losses is less than 0.65, and it is less than the results in which the thermally induced diffraction losses are neglected. The theoretical model is applied to a diode-end-pumped Nd:GdVO 4 laser operating at 1342 nm, and the theoretical calculations are in good agreement with the experimental results. (paper)

  12. The detection of electron-beam-induced current in junctionless semiconductor

    International Nuclear Information System (INIS)

    Tan, Chee Chin; Ong, Vincent K. S.

    2010-01-01

    The scanning electron microscope is a versatile tool and its electron beam techniques have been widely used in semiconductor material and device characterizations. One of these electron beam techniques is the electron-beam-induced current (EBIC) technique. One of the limitations of the conventional EBIC technique is that it requires charge collecting junctions which may not be readily available in junctionless samples such as bare substrates unless some special sample preparation procedure such as the fabrication of a diffused junction is done on the junctionless sample. In this paper, the technique of detecting EBIC current in junctionless samples with the use of a two-point probe is presented. It is found that the EBIC current is independent from its physical parameter when the sample thickness is greater than 4L; the width to the right of probe 2 and the width to the left of probe 1 are greater than 2L and 8L, respectively. The parameters affecting this technique of detecting the EBIC current such as the depth of the generation volume, probe spacing, and the applied bias are also discussed in this paper. A commercially available two-dimensional device simulator was used to verify this technique.

  13. High temperature semiconductor diode laser pumps for high energy laser applications

    Science.gov (United States)

    Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

    2018-02-01

    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

  14. Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam

    Science.gov (United States)

    Uedono, A.; Wei, L.; Tanigawa, S.; Suzuki, R.; Ohgaki, H.; Mikado, T.; Ohji, Y.

    1993-12-01

    The positron annihilation in a metal-oxide semiconductor was studied by using a pulsed monoenergetic positron beam. Lifetime spectra of positrons were measured as a function of incident positron energy for a polycrystalline Si(100 nm)/SiO2(400 nm)/Si specimen. Applying a gate voltage between the polycrystalline Si film and the Si substrate, positrons implanted into the specimen were accumulated at the SiO2/Si interface. From the measurements, it was found that the annihilation probability of ortho-positronium (ortho-Ps) drastically decreased at the SiO2/Si interface. The observed inhibition of the Ps formation was attributed to an interaction between positrons and defects at the SiO2/Si interface.

  15. Semiconductor devices as track detectors in high energy colliding beam experiments

    International Nuclear Information System (INIS)

    Ludlam, T.

    1980-01-01

    In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems

  16. A semiconductor metasurface with multiple functionalities: A polarizing beam splitter with simultaneous focusing ability

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jun Hyung; Jin Jung, Myoung; Ho Song, Seok, E-mail: shsong@hanyang.ac.kr [Department of Physics, Hanyang University, Seoul (Korea, Republic of); Woong Yoon, Jae; Magnusson, Robert [Department of Electrical Engineering, University of Texas–Arlington, Arlington, Texas 76019 (United States); Kyun Hong, Jong [Department of Electrical Engineering, Hanyang University, Seoul (Korea, Republic of)

    2014-06-09

    We propose a semiconductor metasurface that simultaneously performs two independent functions: focusing and polarization filtering. The wavefronts of the reflected and transmitted light distributions are precisely manipulated by spatial parametric variation of a subwavelength thin-film Si grating, which inherently possesses polarization filtering properties. We design a 12-μm-wide metasurface containing only nineteen Si grating ridges. Under a 10-μm-wide unpolarized Gaussian beam incidence at wavelength of 1.55 μm, the resulting device shows promising theoretical performance with high power efficiency exceeding 80% and polarization extinction ratio of ∼10 dB with focal spot diameters near 1–2 μm.

  17. Semiconductor devices as track detectors in high energy colliding beam experiments

    Energy Technology Data Exchange (ETDEWEB)

    Ludlam, T

    1980-01-01

    In considering the design of experiments for high energy colliding beam facilities one quickly sees the need for better detectors. The full exploitation of machines like ISABELLE will call for detector capabilities beyond what can be expected from refinements of the conventional approaches to particle detection in high energy physics experiments. Over the past year or so there has been a general realization that semiconductor device technology offers the possibility of position sensing detectors having resolution elements with dimensions of the order of 10 microns or smaller. Such a detector could offer enormous advantages in the design of experiments, and the purpose of this paper is to discuss some of the possibilities and some of the problems.

  18. Finite Element Analysis of Walking Beam of a New Compound Adjustment Balance Pumping Unit

    Science.gov (United States)

    Wu, Jufei; Wang, Qian; Han, Yunfei

    2017-12-01

    In this paper, taking the designer of the new compound balance pumping unit beam as our research target, the three-dimensional model is established by Solid Works, the load and the constraint are determined. ANSYS Workbench is used to analyze the tail and the whole of the beam, the stress and deformation are obtained to meet the strength requirements. The finite element simulation and theoretical calculation of the moment of the center axis beam are carried out. The finite element simulation results are compared with the calculated results of the theoretical mechanics model to verify the correctness of the theoretical calculation. Finally, the finite element analysis is consistent with the theoretical calculation results. The theoretical calculation results are preferable, and the bending moment value provides the theoretical reference for the follow-up optimization and research design.

  19. Influence of total beam current on HRTEM image resolution in differentially pumped ETEM with nitrogen gas

    International Nuclear Information System (INIS)

    Bright, A.N.; Yoshida, K.; Tanaka, N.

    2013-01-01

    Environmental transmission electron microscopy (ETEM) enables the study of catalytic and other reaction processes as they occur with Angstrom-level resolution. The microscope used is a dedicated ETEM (Titan ETEM, FEI Company) with a differential pumping vacuum system and apertures, allowing aberration corrected high-resolution transmission electron microscopy (HRTEM) imaging to be performed with gas pressures up to 20 mbar in the sample area and with significant advantages over membrane-type E-cell holders. The effect on image resolution of varying the nitrogen gas pressure, electron beam current density and total beam current were measured using information limit (Young's fringes) on a standard cross grating sample and from silicon crystal lattice imaging. As expected, increasing gas pressure causes a decrease in HRTEM image resolution. However, the total electron beam current also causes big changes in the image resolution (lower beam current giving better resolution), whereas varying the beam current density has almost no effect on resolution, a result that has not been reported previously. This behavior is seen even with zero-loss filtered imaging, which we believe shows that the drop in resolution is caused by elastic scattering at gas ions created by the incident electron beam. Suitable conditions for acquiring high resolution images in a gas environment are discussed. Lattice images at nitrogen pressures up to 16 mbar are shown, with 0.12 nm information transfer at 4 mbar. -- Highlights: ► ETEM images with point resolution of 0.12 nm in 4 mbar of nitrogen gas. ► Clear Si lattice imaging with 16 mbar of nitrogen gas. ► ETEM image resolution in gas can be much improved by decreasing total beam current. ► Beam current density (beam convergence) has no effect on the image resolution.

  20. Influence of total beam current on HRTEM image resolution in differentially pumped ETEM with nitrogen gas.

    Science.gov (United States)

    Bright, A N; Yoshida, K; Tanaka, N

    2013-01-01

    Environmental transmission electron microscopy (ETEM) enables the study of catalytic and other reaction processes as they occur with Angstrom-level resolution. The microscope used is a dedicated ETEM (Titan ETEM, FEI Company) with a differential pumping vacuum system and apertures, allowing aberration corrected high-resolution transmission electron microscopy (HRTEM) imaging to be performed with gas pressures up to 20 mbar in the sample area and with significant advantages over membrane-type E-cell holders. The effect on image resolution of varying the nitrogen gas pressure, electron beam current density and total beam current were measured using information limit (Young's fringes) on a standard cross grating sample and from silicon crystal lattice imaging. As expected, increasing gas pressure causes a decrease in HRTEM image resolution. However, the total electron beam current also causes big changes in the image resolution (lower beam current giving better resolution), whereas varying the beam current density has almost no effect on resolution, a result that has not been reported previously. This behavior is seen even with zero-loss filtered imaging, which we believe shows that the drop in resolution is caused by elastic scattering at gas ions created by the incident electron beam. Suitable conditions for acquiring high resolution images in a gas environment are discussed. Lattice images at nitrogen pressures up to 16 mbar are shown, with 0.12 nm information transfer at 4 mbar. Copyright © 2012 Elsevier B.V. All rights reserved.

  1. The Nike electron-beam-pumped KrF laser amplifiers

    International Nuclear Information System (INIS)

    Sethian, J.D.; Pawley, C.J.; Obenschain, S.P.

    1997-01-01

    Nike is a recently completed multikilojoule krypton-fluoride (KrF) laser that has been built to study the physics of direct-drive inertial confinement fusion. The two final amplifiers of the Nike laser are both electron-beam-pumped systems. This paper describes these two amplifiers, with an emphasis on the pulsed power. The smaller of the two has a 20 x 20 cm aperture, and produces an output laser beam energy in excess of 100 J. This 20 cm Amplifier uses a single 12 kJ Marx generator to inject two 300 kV, 75 kA, 140 ns flat-top electron beams into opposite sides of the laser cell. The larger amplifier in Nike has a 60 x 60 cm aperture, and amplifies the laser beam up to 5 kJ. This 60 cm amplifier has two independent electron beam systems. Each system has a 170 kJ Marx generator that produces a 670 kV, 540 kA, 240 ns flat-top electron beam. Both amplifiers are complete, fully integrated into the laser, meet the Nike system requirements, and are used routinely for laser-target experiments

  2. Short-wavelength soft-x-ray laser pumped in double-pulse single-beam non-normal incidence

    International Nuclear Information System (INIS)

    Zimmer, D.; Ros, D.; Guilbaud, O.; Habib, J.; Kazamias, S.; Zielbauer, B.; Bagnoud, V.; Ecker, B.; Aurand, B.; Kuehl, T.; Hochhaus, D. C.; Neumayer, P.

    2010-01-01

    We demonstrated a 7.36 nm Ni-like samarium soft-x-ray laser, pumped by 36 J of a neodymium:glass chirped-pulse amplification laser. Double-pulse single-beam non-normal-incidence pumping was applied for efficient soft-x-ray laser generation. In this case, the applied technique included a single-optic focusing geometry for large beam diameters, a single-pass grating compressor, traveling-wave tuning capability, and an optimized high-energy laser double pulse. This scheme has the potential for even shorter-wavelength soft-x-ray laser pumping.

  3. PUMPS

    Science.gov (United States)

    Thornton, J.D.

    1959-03-24

    A pump is described for conveving liquids, particure it is not advisable he apparatus. The to be submerged in the liquid to be pumped, a conduit extending from the high-velocity nozzle of the injector,and means for applying a pulsating prcesure to the surface of the liquid in the conduit, whereby the surface oscillates between positions in the conduit. During the positive half- cycle of an applied pulse liquid is forced through the high velocity nozzle or jet of the injector and operates in the manner of the well known water injector and pumps liquid from the main intake to the outlet of the injector. During the negative half-cycle of the pulse liquid flows in reverse through the jet but no reverse pumping action takes place.

  4. Manipulation of a two-photon pump in superconductor - semiconductor heterostructures

    Science.gov (United States)

    Orth, Peter P.; Baireuther, Paul; Vekhter, Ilya; Schmalian, Joerg

    2014-03-01

    We investigate the photon statistics, entanglement and squeezing of a pn-junction sandwiched between two superconducting leads, and show that such an electrically-driven photon pump generates correlated and entangled pairs of photons. In particular, we demonstrate that the squeezing of the fluctuations in the quadrature amplitudes of the emitted light can be manipulated by changing the relative phase of the order parameters of the superconductors. This reveals how macroscopic coherence of the superconducting state can be used to tailor the properties of a two-photon state.

  5. Pumping experiment of water on B and LaB6 films with electron beam evaporator

    International Nuclear Information System (INIS)

    Mori, Takahiro; Hanaoka, Yutaka; Akaishi, Kenya; Kubota, Yusuke; Motojima, Osamu; Mushiaki, Motoi; Funato, Yasuyuki.

    1992-10-01

    Pumping characteristics of water vapor on boron and lanthanum hexaboride films formed with an electron beam evaporator have been investigated in high vacuum of a pressure region between 10 -4 and 10 -3 Pa. Measured initial maximum pumping speeds of water for fresh B and LaB 6 films on substrates with a deposition amount from 2.3 x 10 21 to 6.7 x 10 21 molecules·m -2 are 3.2 ∼ 4.9 m 3 ·s -1 ·m -2 , and maximum saturation amounts of adsorbed water on these films are 2.9 x 10 20 ∼ 1.3 x 10 21 H 2 O molecules·m -2 . (author)

  6. Pulse forming networks for fast pumping of high power electron-beam-controlled CO2 lasers

    International Nuclear Information System (INIS)

    Riepe, K.B.

    1975-01-01

    The transverse electric discharge is a widely used technique for pumping CO 2 lasers at high pressures for the generation, simply and efficiently, of very high power laser pulses. The development of the electron-beam-controlled discharge has allowed the application of the transverse discharge to large aperture, very high energy systems. LASL is now in the process of assembly and checkout of a CO 2 laser which is designed to generate a one nanosecond pulse containing 10 kilojoules, for use in laser fusion experiments. The front end of this laser consists of a set of preamplifiers and a mode locked oscillator with electro-optic single pulse switchout. The final amplifier stage consists of four parallel modules, each one consisting of a two-sided electron gun, and two 35 x 35 x 200 cm gas pumping regions operating at a pressure of 1800 torr with a 3/ 1 / 4 /1 (He/N 2 /CO 2 ) laser mix. (auth)

  7. Amplification of UV ultrashort pulse laser in e-beam pumped KrF amplifier

    CERN Document Server

    Tang Xiu Zhang; Gong Kun; Ma Wei Yi; Shan Yu Sheng; Wang Nai Yan

    2002-01-01

    Experimental investigations were performed for amplification of ultrashort pulse laser with Heaven-I e-beam pumped KrF amplifier in CIAE. A 50 mJ, 420 fs UV ultrashort pulse was amplified to 2-3 J energy, 1.2 ps pulse duration, and 2TW laser power. Experimental technique such as synchronization were describe, some parameters such as nonlinear absorb coefficient were measured in experiment. As a result, it is possible to achieve ultra-strong UV laser with intensity higher than 10 sup 1 sup 9 W/cm sup 2 in recently years

  8. On-the-Fly Control of High-Harmonic Generation Using a Structured Pump Beam

    Science.gov (United States)

    Hareli, Liran; Lobachinsky, Lilya; Shoulga, Georgiy; Eliezer, Yaniv; Michaeli, Linor; Bahabad, Alon

    2018-05-01

    We demonstrate experimentally a relatively simple yet powerful all-optical enhancement and control technique for high harmonic generation. This is achieved by using as a pump beam two different spatial optical modes interfering together to realize tunable periodic quasi-phase matching of the interaction. With this technique, we demonstrate on-the-fly quasi-phase matching of harmonic orders 29-41 at ambient gas pressure levels of 50 and 100 Torr, where an up to 100-fold enhancement of the emission is observed. The technique is scalable to different harmonic orders and ambient pressure conditions.

  9. Amplification of UV ultrashort pulse laser in e-beam pumped KrF amplifier

    International Nuclear Information System (INIS)

    Tang Xiuzhang; Zhang Haifeng; Gong Kun; Ma Weiyi; Shan Yusheng; Wang Naiyan

    2002-01-01

    Experimental investigations were performed for amplification of ultrashort pulse laser with Heaven-I e-beam pumped KrF amplifier in CIAE. A 50 mJ, 420 fs UV ultrashort pulse was amplified to 2-3 J energy, 1.2 ps pulse duration, and 2TW laser power. Experimental technique such as synchronization were describe, some parameters such as nonlinear absorb coefficient were measured in experiment. As a result, it is possible to achieve ultra-strong UV laser with intensity higher than 10 19 W/cm 2 in recently years

  10. Measurement of the electron quenching rate in an electron beam pumped KrF* laser

    International Nuclear Information System (INIS)

    Nishioka, Hajime; Kurashima, Toshio; Kuranishi, Hideaki; Ueda, Kenichi; Takuma, Hiroshi; Sasaki, Akira; Kasuya, Koichi.

    1988-01-01

    The electron quenching rate of KrF * in an electron beam pumped laser has been studied by accurately measuring the saturation intensity in a mixture of Ar/Kr/F 2 = 94/6/0.284. The input intensity of the measurements was widely varied from 100 W cm -2 (small signal region) to 100 MW cm -2 (absorption dominant region) in order to separate laser parameters which are small signal gain coefficient, absorption coefficient, and saturation intensity from the measured net gain coefficients. The gas pressure and the pump rate were varied in the range of 0.5 to 2.5 atm and 0.3 to 1.4 MW cm -3 , respectively. The electron quenching rate constant of 4.5 x 10 -7 cm 3 s -1 was obtained from the pressure and the pump rate dependence of the KrF * saturation intensity with the temperature dependence of the rate gas 3-body quenching rate as a function of gas temperature to the -3rd power. The small signal gain coefficients calculated with the determined quenching rate constants shows excellent agreement with the measurements. (author)

  11. Measurement of the electron quenching rate in an electron beam pumped KrF/sup */ laser

    Energy Technology Data Exchange (ETDEWEB)

    Nishioka, Hajime; Kurashima, Toshio; Kuranishi, Hideaki; Ueda, Kenichi; Takuma, Hiroshi; Sasaki, Akira; Kasuya, Koichi.

    1988-09-01

    The electron quenching rate of KrF/sup */ in an electron beam pumped laser has been studied by accurately measuring the saturation intensity in a mixture of Ar/Kr/F/sub 2/ = 94/6/0.284. The input intensity of the measurements was widely varied from 100 W cm/sup -2/ (small signal region) to 100 MW cm/sup -2/ (absorption dominant region) in order to separate laser parameters which are small signal gain coefficient, absorption coefficient, and saturation intensity from the measured net gain coefficients. The gas pressure and the pump rate were varied in the range of 0.5 to 2.5 atm and 0.3 to 1.4 MW cm/sup -3/, respectively. The electron quenching rate constant of 4.5 x 10/sup -7/ cm/sup 3/s/sup -1/ was obtained from the pressure and the pump rate dependence of the KrF/sup */ saturation intensity with the temperature dependence of the rate gas 3-body quenching rate as a function of gas temperature to the -3rd power. The small signal gain coefficients calculated with the determined quenching rate constants shows excellent agreement with the measurements.

  12. Development and characterization of semiconductor materials by ion beams. Final report of a co-ordinated research project

    International Nuclear Information System (INIS)

    2002-06-01

    This CRP was recommended by the Consultants meeting on Ion Beam Techniques Applied to Semiconductor and Related Advanced Materials, held in April 1997 in Vienna. The consultants proposed to have a CRP in the field of application of MeV ion beams for the development and characterization of semiconductor materials. The CRP was approved and a first RCM was held in Vienna between 2-5 June 1998, in order to stimulate ideas and to promote collaborations among CRP participants. The goals and practical outcomes of the CRP were defined and several specific topics were identified including: optoelectronic characterization of semiconductor materials and devices by ion microbeams, characterization of thin films, defect transformations in semiconductors, light element analysis. One important recommendation was that sample exchanges among different laboratories be strongly encouraged. The participants presented individual activities on their projects, all subjects of research were identified and linked with approved individual projects. Collaboration among the participants was discussed and established. Some modifications to work plans were adopted. As proposed during the first RCM, the final RCM was held at the Ruder Boskovic Institute, Zagreb, Croatia, between 25 and 29 September 2000, with the purpose of reviewing/discussing the results achieved during the course of the CRP and to prepare a draft of the final report and associated publication. This document contains summary of the CRP and ten individual reports presented by participants. Each of the reports has been indexed separately

  13. Pump

    International Nuclear Information System (INIS)

    Mole, C.J.

    1983-01-01

    An electromagnetic pump for circulating liquid -metal coolant through a nuclear reactor wherein opposite walls of a pump duct serve as electrodes to transmit current radially through the liquid-metal in the ducts. A circumferential electric field is supplied to the liquid-metal by a toroidal electromagnet which has core sections interposed between the ducts. The windings of the electromagnet are composed of metal which is superconductive at low temperatures and the electromagnet is maintained at a temperature at which it is superconductive by liquid helium which is fed through the conductors which supply the excitation for the electromagnet. The walls of the ducts joining the electrodes include metal plates insulated from the electrodes backed up by insulators so that they are capable of withstanding the pressure of the liquid-metal. These composite wall structures may also be of thin metal strips of low electrical conductivity backed up by sturdy insulators. (author)

  14. Compensation of nonlinearity in a fiber-optic transmission system using frequency-degenerate phase conjugation through counter-propagating dual pump FWM in a semiconductor optical amplifier

    Science.gov (United States)

    Anchal, Abhishek; K, Pradeep Kumar; O'Duill, Sean; Anandarajah, Prince M.; Landais, Pascal

    2018-04-01

    We present a scheme of frequency-degenerate mid-span spectral inversion (MSSI) for nonlinearity compensation in fiber-optic transmission systems. The spectral inversion is obtained by using counter-propagating dual pump four-wave mixing in a semiconductor optical amplifier (SOA). Frequency-degeneracy between signal and conjugate is achieved by keeping two pump frequencies symmetrical about the signal frequency. We simulate the performance of MSSI for nonlinearity compensation by scrutinizing the improvement of the Q-factor of a 200 Gbps QPSK signal transmitted over a standard single mode fiber, as a function of launch power for different span lengths and number of spans. We demonstrate a 7.5 dB improvement in the input power dynamic range and an almost 83% increase in the transmission length for optimum MSSI parameters of -2 dBm pump power and 400 mA SOA current.

  15. Ion beam synthesis and characterization of metastable group-IV alloy semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Naoto; Hasegawa, Masataka; Hayashi, Nobuyuki; Makita, Yunosuke; Shibata, Hajime [Electrotechnical Lab., Tsukuba, Ibaraki (Japan); Katsumata, Hiroshi; Uekusa, Shin-ichiro

    1997-03-01

    New Group-IV metastable alloy semiconductors and their heterostructures based on combinations of C-Si-Ge-Sn are recently attracting interest because of feasible new electronic and optoelectronic application in Si-technology and here research works on synthesis and characterization of the epitaxial heterostructures of Si-C, Si-Sn on Si fabricated by ion implantation together either with ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG) have been investigated. Formations of layers of Si{sub 1-y}C{sub y} (y=0.014 at peak concentration) on Si(100) have been performed by high-dose implantation of 17 keV C ions and successive IBIEC with 400 keV Ar or Ge ion bombardments at 300-400degC or SPEG up to 750degC. Crystalline growth by IBIEC has shown a lower growth rate in Si{sub 1-y}C{sub y}/Si than in intrinsic Si due mainly to the strain existence, which was observed by the X-ray diffraction (XRD) measurements. Photoluminescence(PL) measurements have revealed I{sub 1} or G line emissions that are relevant to small vacancy clusters or C pair formation, respectively. The crystalline growth of Si{sub 1-z}Sn{sub z} layers by 110 keV {sup 120}Sn ion implantation (z=0.029 and z=0.058 at peak concentration) into Si(100) followed either by IBIEC or by SPEG has been also investigated. PL emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I{sub 1} or I{sub 1}-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-C and Si-Sn alloy semiconductors. (J.P.N.)

  16. Optically pumped electron spin polarized targets for use in the production of polarized ion beams

    International Nuclear Information System (INIS)

    Anderson, L.W.

    1979-01-01

    The production of relatively dense electron spin polarized alkali metal vapor targets by optical pumping with intense cw dye lasers is discussed. The target density and electron spin polarization depend on the dye laser intensity and bandwidth, the magnetic field at the target, and the electron spin depolarization time. For example in a magnetic field of 1.5 x 10 3 G, and using 1 W dye laser with a bandwidth of 10 10 Hz one can construct an electron spin polarized Na vapor target with a target thickness of 1.6 x 10 13 atoms/cm 2 and an average electron spin polarization of about 90% even though the Na atoms are completely depolarized at every wall collision. Possible uses of the electron spin polarized targets for the production of intense beams of polarized H - or 3 He - ions are discussed. (orig.)

  17. Ion-atom charge-transfer system for a heavy-ion-beam pumped laser

    International Nuclear Information System (INIS)

    Ulrich, A.; Gernhaeuser, R.; Kroetz, W.; Wieser, J.; Murnick, D.E.

    1994-01-01

    An Ar target to which Cs vapor could be added, excited by a pulsed beam of 100-MeV 32 S ions, was studied as a prototype ion-atom charge-transfer system for pumping short-wavelength lasers. Low-velocity Ar 2+ ions were efficiently produced; a huge increase in the intensity of the Ar II 4d-4p spectral lines was observed when Cs vapor was added to the argon. This observation is explained by a selective charge transfer of the Cs 6s electron into the upper levels of the observed transitions. A rate constant of (1.4±0.2)x10 -9 cm 3 /s for the transfer process was determined

  18. Application of Metal-Semiconductor-Metal (MSM) Photodetectors for Transverse and Longitudinal Intra-Bunch Beam Diagnostics

    CERN Document Server

    Steinhagen, R J; Boland, M J; Lucas, T G; Rassool, R P

    2013-01-01

    The performance reach of modern accelerators is often governed by the ability to reliably measure and control the beam stability. In high-brightness lepton and high-energy hadron accelerators, the use of optical diagnostic techniques is becoming more widespread as the required bandwidth, resolution and high RF beam power level involved limit the use of traditional electro-magnetic RF pick-up based methods. This contribution discusses the use of fibre-coupled ultra-fast Metal-Semiconductor-Metal Photodetectors (MSM-PD) as an alternative, dependablemeans to measure signals derived from electro-optical and synchrotron-light based diagnostics systems. It describes the beam studies performed at CERN’s CLIC Test Facility (CTF3) and the Australian Synchrotron to assess the feasibility of this technology as a robust, wide-band and sensitive technique for measuring transverse intra-bunch and bunch-by-bunch beam oscillations, longitudinal beam profiles, un-bunched beam population and beam-halo profiles. The amplifica...

  19. Understanding and eliminating artifact signals from diffusely scattered pump beam in measurements of rough samples by time-domain thermoreflectance (TDTR)

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Bo [Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576 (Singapore); Koh, Yee Kan, E-mail: mpekyk@nus.edu.sg [Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576 (Singapore); Centre of Advanced 2D Materials, National University of Singapore, Singapore 117542 (Singapore)

    2016-06-15

    Time-domain thermoreflectance (TDTR) is a pump-probe technique frequently applied to measure the thermal transport properties of bulk materials, nanostructures, and interfaces. One of the limitations of TDTR is that it can only be employed to samples with a fairly smooth surface. For rough samples, artifact signals are collected when the pump beam in TDTR measurements is diffusely scattered by the rough surface into the photodetector, rendering the TDTR measurements invalid. In this paper, we systemically studied the factors affecting the artifact signals due to the pump beam leaked into the photodetector and thus established the origin of the artifact signals. We find that signals from the leaked pump beam are modulated by the probe beam due to the phase rotation induced in the photodetector by the illumination of the probe beam. As a result of the modulation, artifact signals due to the leaked pump beam are registered in TDTR measurements as the out-of-phase signals. We then developed a simple approach to eliminate the artifact signals due to the leaked pump beam. We verify our leak-pump correction approach by measuring the thermal conductivity of a rough InN sample, when the signals from the leaked pump beam are significant. We also discuss the advantages of our new method over the two-tint approach and its limitations. Our new approach enables measurements of the thermal conductivity of rough samples using TDTR.

  20. Intelligent Balanced Device and its Sensing System for Beam Pumping Units

    Directory of Open Access Journals (Sweden)

    Hangxin WEI

    2014-11-01

    Full Text Available In order to save the energy of the beam pumping unit, the intelligent balanced device was developed. The device can adjust the position of the balanced-block automatically by the single chip microcomputer controller, and the fuzzy PD control algorithm was used to control the servo motor of the device. Since some signals should be inputted into the intelligent balanced device to calculate the balanced index of the pumping unit, the signals sensing system were designed. The sensing system includes the electric current sensor and voltage sensor of the main motor, the displacement sensor and the force sensor of the horse head. The sensing network has three layers: slave station, relay station and master station. The data transmission between them is based on ZigBee and GPRS method which can adapt the environment of the oil field. The results of application show that the intelligent balanced device and its sensing system can have the effect of reducing the power consumption, working reliability and communication efficiently.

  1. On one peculiarity of the model describing the interaction of the electron beam with the semiconductor surface

    Science.gov (United States)

    Stepovich, M. A.; Amrastanov, A. N.; Seregina, E. V.; Filippov, M. N.

    2018-01-01

    The problem of heat distribution in semiconductor materials irradiated with sharply focused electron beams in the absence of heat exchange between the target and the external medium is considered by mathematical modeling methods. For a quantitative description of energy losses by probe electrons a model based on a separate description of the contributions of absorbed in the target and backscattered electrons and applicable to a wide class of solids and a range of primary electron energies is used. Using the features of this approach, the nonmonotonic dependence of the temperature of the maximum heating in the target on the energy of the primary electrons is explained. Some modeling results are illustrated for semiconductor materials of electronic engineering.

  2. Self ordering threshold and superradiant backscattering to slow a fast gas beam in a ring cavity with counter propagating pump.

    Science.gov (United States)

    Maes, C; Asbóth, J K; Ritsch, H

    2007-05-14

    We study the dynamics of a fast gaseous beam in a high Q ring cavity counter propagating a strong pump laser with large detuning from any particle optical resonance. As spontaneous emission is strongly suppressed the particles can be treated as polarizable point masses forming a dynamic moving mirror. Above a threshold intensity the particles exhibit spatial periodic ordering enhancing collective coherent backscattering which decelerates the beam. Based on a linear stability analysis in their accelerated rest frame we derive analytic bounds for the intensity threshold of this selforganization as a function of particle number, average velocity, kinetic temperature, pump detuning and resonator linewidth. The analytical results agree well with time dependent simulations of the N-particle motion including field damping and spontaneous emission noise. Our results give conditions which may be easily evaluated for stopping and cooling a fast molecular beam.

  3. Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Djara, V.; Cherkaoui, K.; Negara, M. A.; Hurley, P. K., E-mail: paul.hurley@tyndall.ie [Tyndall National Institute, University College Cork, Dyke Parade, Cork (Ireland)

    2015-11-28

    An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N{sub inv}) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I{sub d}-V{sub g} measurements enabled an accurate effective mobility vs N{sub inv} extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs.

  4. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  5. A split-beam probe-pump-probe scheme for femtosecond time resolved protein X-ray crystallography

    Directory of Open Access Journals (Sweden)

    Jasper J. van Thor

    2015-01-01

    Full Text Available In order to exploit the femtosecond pulse duration of X-ray Free-Electron Lasers (XFEL operating in the hard X-ray regime for ultrafast time-resolved protein crystallography experiments, critical parameters that determine the crystallographic signal-to-noise (I/σI must be addressed. For single-crystal studies under low absorbed dose conditions, it has been shown that the intrinsic pulse intensity stability as well as mode structure and jitter of this structure, significantly affect the crystallographic signal-to-noise. Here, geometrical parameters are theoretically explored for a three-beam scheme: X-ray probe, optical pump, X-ray probe (or “probe-pump-probe” which will allow experimental determination of the photo-induced structure factor amplitude differences, ΔF, in a ratiometric manner, thereby internally referencing the intensity noise of the XFEL source. In addition to a non-collinear split-beam geometry which separates un-pumped and pumped diffraction patterns on an area detector, applying an additional convergence angle to both beams by focusing leads to integration over mosaic blocks in the case of well-ordered stationary protein crystals. Ray-tracing X-ray diffraction simulations are performed for an example using photoactive yellow protein crystals in order to explore the geometrical design parameters which would be needed. The specifications for an X-ray split and delay instrument that implements both an offset angle and focused beams are discussed, for implementation of a probe-pump-probe scheme at the European XFEL. We discuss possible extension of single crystal studies to serial femtosecond crystallography, particularly in view of the expected X-ray damage and ablation due to the first probe pulse.

  6. Selective injection locking of a multi-mode semiconductor laser to a multi-frequency reference beam

    Science.gov (United States)

    Pramod, Mysore Srinivas; Yang, Tao; Pandey, Kanhaiya; Giudici, Massimo; Wilkowski, David

    2014-07-01

    Injection locking is a well known and commonly used method for coherent light amplification. Usually injection locking is obtained on a single-mode laser injected by a single-frequency seeding beam. In this work we show that selective injection locking of a single-frequency may also be achieved on a multi-mode semiconductor laser injected by a multi-frequency seeding beam, if the slave laser provides sufficient frequency filtering. This selective injection locking condition depends critically on the frequency detuning between the free-running slave emission frequency and each injected frequency component. Stable selective injection locking to a set of three seeding components separated by 1.2 GHz is obtained. This system provides an amplification up to 37 dB of each component. This result suggests that, using distinct slave lasers for each frequency line, a set of mutually coherent high-power radiation modes can be tuned in the GHz frequency domain.

  7. Progress towards a semiconductor Compton camera for prompt gamma imaging during proton beam therapy for range and dose verification

    Science.gov (United States)

    Gutierrez, A.; Baker, C.; Boston, H.; Chung, S.; Judson, D. S.; Kacperek, A.; Le Crom, B.; Moss, R.; Royle, G.; Speller, R.; Boston, A. J.

    2018-01-01

    The main objective of this work is to test a new semiconductor Compton camera for prompt gamma imaging. Our device is composed of three active layers: a Si(Li) detector as a scatterer and two high purity Germanium detectors as absorbers of high-energy gamma rays. We performed Monte Carlo simulations using the Geant4 toolkit to characterise the expected gamma field during proton beam therapy and have made experimental measurements of the gamma spectrum with a 60 MeV passive scattering beam irradiating a phantom. In this proceeding, we describe the status of the Compton camera and present the first preliminary measurements with radioactive sources and their corresponding reconstructed images.

  8. Multi-Fresnel lenses pumping approach for improving high-power Nd:YAG solar laser beam quality.

    Science.gov (United States)

    Liang, Dawei; Almeida, Joana

    2013-07-20

    To significantly improve the present-day high-power solar laser beam quality, a three-stage multi-Fresnel lenses approach is proposed for side-pumping either a Nd:YAG single-crystal or a core-doped Sm(3+)Nd:YAG ceramic rod. Optimum pumping and laser beam parameters are found through ZEMAX and LASCAD numerical analysis. The proposed scheme offers a uniform absorption profile along the rod. 167 W laser power can be achieved, corresponding to 29.3 W/m(2) collection efficiency. High brightness figure of merit of 8.34 W is expected for the core-doped rod within a convex-concave resonator, which is 1300 times higher than that of the most-recent high-power solar laser.

  9. A measurement of the absolute neutron beam polarization produced by an optically pumped 3He neutron spin filter

    International Nuclear Information System (INIS)

    Rich, D.R.; Bowman, J.D.; Crawford, B.E.; Delheij, P.P.J.; Espy, M.A.; Haseyama, T.; Jones, G.; Keith, C.D.; Knudson, J.; Leuschner, M.B.; Masaike, A.; Masuda, Y.; Matsuda, Y.; Penttilae, S.I.; Pomeroy, V.R.; Smith, D.A.; Snow, W.M.; Szymanski, J.J.; Stephenson, S.L.; Thompson, A.K.; Yuan, V.

    2002-01-01

    The capability of performing accurate absolute measurements of neutron beam polarization opens a number of exciting opportunities in fundamental neutron physics and in neutron scattering. At the LANSCE pulsed neutron source we have measured the neutron beam polarization with an absolute accuracy of 0.3% in the neutron energy range from 40 meV to 10 eV using an optically pumped polarized 3 He spin filter and a relative transmission measurement technique. 3 He was polarized using the Rb spin-exchange method. We describe the measurement technique, present our results, and discuss some of the systematic effects associated with the method

  10. Simple and efficient method of spin-polarizing a metastable helium beam by diode laser optical pumping

    International Nuclear Information System (INIS)

    Granitza, B.; Salvietti, M.; Torello, E.; Mattera, L.; Sasso, A.

    1995-01-01

    Diode laser optical pumping to produce a highly spin-polarized metastable He beam to be used in a spin-polarized metastable atom deexcitation spectroscopy experiment on magnetized surfaces is described. Efficient pumping of the beam is performed by means of an SDL-6702 distributed Bragg reflector diode laser which yields 50 mW of output power in a single longitudinal mode at 1083 nm, the resonance wavelength for the 2 3 S→2 3 P 0,1,2 (D 0 , D 1 , and D 2 ) transitions of He*. The light is circularly polarized by a quarter-wave plate, allowing easy change of the sense of atomic polarization. The laser frequency can be locked to the atomic transition for several hours by phase-sensitive detection of the saturated absorption signal in a He discharge cell. Any of the three transitions of the triplet system can be pumped with the laser but the maximum level of atomic polarization of 98.5% is found pumping the D 2 line. copyright 1995 American Institute of Physics

  11. Radiation from a Relativistic Electron Beam in a Molecular Medium due to Parametric Pumping by a Strong Electromagnetic Wave,

    Science.gov (United States)

    1981-02-01

    UNIVERSITY OF MARYLAND DEPARTMENT OF PHYSICS 4WJD ASTRONOMY COLLG PAM A 2 3i 81 4 30) 235. RADIATION FROM A .ELATIVISTIC_§LECTRON BEAM IN AZOLECULAR...A MOLECULAR MEDIUM DUE TO PARAMETRIC PUMPING BY A STRONG ELECTROMAGNETIC WAVE L. Stenflo Department of Plasma Physics Umel University S-90187 Umel...GUteborg, Sweden and Laboratory for Plasma and Fusion Energy Studies University of Maryland College Park, Maryland 20742 Physics Publication Number 81

  12. Formulation of a Mesoscopic Electron Beam Splitter with Application in Semiconductor Based Quantum Computing

    OpenAIRE

    Shanker, A.; Bhowmik, D.; Bhattacharya, T. K.

    2010-01-01

    We aim to analytically arrive at a beam splitter formulation for electron waves. The electron beam splitter is an essential component of quantum logical devices. To arrive at the beam splitter structure, the electrons are treated as waves, i.e. we assume the transport to be ballistic. Ballistic electrons are electrons that travel over such short distances that their phase coherence is maintained. For mesoscopic devices with size smaller than the mean free path, the phase relaxation length and...

  13. Recent advance to 3 × 10(-5) rad near diffraction-limited beam divergence of dye laser with transverse-discharge flash-lamp pumping.

    Science.gov (United States)

    Trusov, K K

    1994-02-20

    A new experimental setup of a Rhodamine 6G dye laser with a transverse-discharge flash-lamp-pumping system is presented. It differs from a previous setup [Sov. J. Quantum Electron. 16, 468-471 (1989)] in that it has a larger laser beam aperture (32 mm) and higher pumping energy (1 kJ), which made it possible to test the scalability and reach near diffraction-limited laser beam divergence of 3 × 10(-5) rad FWHM at beam energy 1.4 J. The effect of spectral dispersion in the active medium and of other optical elements on the beam divergence is also discussed.

  14. Temperature-Induced Wavelength Shift of Electron-Beam-Pumped Lasers from CdSe, CdS, and ZnO

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1971-01-01

    Experimental results on the temperature dependence of the laser frequency and threshold pump power are presented in the range from liquid helium to room temperature for electron-beam-pumped CdSe, CdS, and ZnO lasers. A linear shift of the laser frequency at high temperatures and a relatively slow...

  15. Heterodyne pump-probe and four-wave mixing in semiconductor optical amplifiers using balanced lock-in detection

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Mørk, Jesper

    1999-01-01

    We demonstrate a new detection scheme for pump-probe and four-wave mixing heterodyne experiments, using balanced detection and a dual-phase lock-in for spectral filtering. The technique allows the use of low repetition-rate laser systems, as is demonstrated on an InGaAsP/InP bulk optical amplifier...... at 1.53 mym. Ultrafast pump-induced changes in the amplitude and phase of the transmitted probe signal are simultaneously measured, going from small to large signal changes and with no need of an absolute phase calibration, showing the versatility and the sensitivity of this detection scheme....... The results for small perturbations are consistent with previous pump-probe experiments reported in literature. Time-resolved four-wave mixing in the absorption regime of the device is measured, and compared with numerical simulations, indicating a 100 fs dephasing time....

  16. Dry vacuum pumps

    International Nuclear Information System (INIS)

    Sibuet, R

    2008-01-01

    For decades and for ultimate pressure below 1 mbar, oil-sealed Rotary Vane Pumps have been the most popular solution for a wide range of vacuum applications. In the late 80ies, Semiconductor Industry has initiated the development of the first dry roughing pumps. Today SC applications are only using dry pumps and dry pumping packages. Since that time, pumps manufacturers have developed dry vacuum pumps technologies in order to make them attractive for other applications. The trend to replace lubricated pumps by dry pumps is now spreading over many other market segments. For the Semiconductor Industry, it has been quite easy to understand the benefits of dry pumps, in terms of Cost of Ownership, process contamination and up-time. In this paper, Technology of Dry pumps, its application in R and D/industries, merits over conventional pumps and future growth scope will be discussed

  17. Numerical study on the selective excitation of Helmholtz-Gauss beams in end-pumped solid-state digital lasers with the control of the laser gain transverse position provided by off-axis end pumping

    Science.gov (United States)

    Tsai, Ko-Fan; Chu, Shu-Chun

    2018-03-01

    This study proposes a complete and unified method for selective excitation of any specified nearly nondiffracting Helmholtz-Gauss (HzG) beam in end-pumped solid-state digital lasers. Four types of the HzG beams: cosine-Gauss beams, Bessel-Gauss beams, Mathieu-Gauss beams, and, in particular, parabolic-Gauss beams are successfully demonstrated to be generated with the proposed methods. To the best of the authors’ knowledge, parabolic-Gauss beams have not yet been directly generated from any kind of laser system. The numerical results of this study show that one can successfully achieve any lasing HzG beams directly from the solid-state digital lasers with only added control of the laser gain transverse position provided by off-axis end pumping. This study also presents a practical digital laser set-up for easily manipulating off-axis pumping in order to achieve the control of the laser gain transverse gain position in digital lasers. The reported results in this study provide advancement of digital lasers in dynamically generating nondiffracting beams. The control of the digital laser cavity gain position creates the possibility of achieving real-time selection of more laser modes in digital lasers, and it is worth further investigation in the future.

  18. Effect of absorbed pump power on the quality of output beam from ...

    Indian Academy of Sciences (India)

    Monolithic laser; thermal lens; diode pumping; spherical aberration; M2 ... the thermal lens as a function of the absorbed pump power towards the degradation of .... abs r4 -•••. (6) where the first term a0 is a constant phase shift and its value is ...

  19. Spin pumping in ion-beam sputtered C o2FeAl /Mo bilayers: Interfacial Gilbert damping

    Science.gov (United States)

    Husain, Sajid; Kumar, Ankit; Barwal, Vineet; Behera, Nilamani; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

    2018-02-01

    The spin-pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered C o2FeAl (CFA)/Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin-current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data have been analyzed using spin-pumping theory in terms of spin current pumped through the ferromagnet/nonmagnetic metal interface to deduce the real spin-mixing conductance and the spin-diffusion length, which are estimated to be 1.56 (±0.30 ) ×1019m-2 and 2.61 (±0.15 )nm , respectively. The damping constant is found to be 8.8 (±0.2 ) ×10-3 in the Mo(3.5 nm)-capped CFA(8 nm) sample corresponding to an ˜69 % enhancement of the original Gilbert damping 5.2 (±0.6 ) ×10-3 in the Al-capped CFA thin film. This is further confirmed by inserting the Cu dusting layer which reduces the spin transport across the CFA/Mo interface. The Mo layer thickness-dependent net spin-current density is found to lie in the range of 1 -4 MA m-2 , which also provides additional quantitative evidence of spin pumping in this bilayer thin-film system.

  20. Optical beam transport to a remote location for low jitter pump-probe experiments with a free electron laser

    Directory of Open Access Journals (Sweden)

    P. Cinquegrana

    2014-04-01

    Full Text Available In this paper we propose a scheme that allows a strong reduction of the timing jitter between the pulses of a free electron laser (FEL and external laser pulses delivered simultaneously at the FEL experimental stations for pump-probe–type experiments. The technique, applicable to all seeding-based FEL schemes, relies on the free-space optical transport of a portion of the seed laser pulse from its optical table to the experimental stations. The results presented here demonstrate that a carefully designed laser beam transport, incorporating also a transverse beam position stabilization, allows one to keep the timing fluctuations, added by as much as 150 m of free space propagation and a number of beam folding mirrors, to less than 4 femtoseconds rms. By its nature our scheme removes the major common timing jitter sources, so the overall jitter in pump-probe measurements done in this way will be below 10 fs (with a margin to be lowered to below 5 fs, much better than the best results reported previously in the literature amounting to 33 fs rms.

  1. Effect of thermal lens on beam quality and mode matching in LD pumped Er-Yb-codoped phosphate glass microchip laser

    Energy Technology Data Exchange (ETDEWEB)

    Liu Shujing; Song Feng; Cai Hong; Li Teng; Tian Bin; Wu Zhaohui; Tian Jianguo [Photonics Center, Nankai University, Tianjin 300071 (China); Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457 (China)

    2008-02-07

    The theoretical values of the thermal focal length and laser beam waist are derived from the theoretical model and transformation theory, respectively. The values of thermal focal length, laser beam waist and the far field divergence angle were experimentally measured in a laser diode (LD) pumped erbium-ytterbium(Er-Yb)-codoped phosphate microchip glass laser. As an extension of thermal effect studies, we investigate the role of thermal lens on beam quality and the mode matching between the pump and the laser, which affects laser efficiency in TEM{sub 00} operation. The study shows that the experimental data are in good agreement with the theoretical predictions.

  2. A Comprehensive Approach Towards Optimizing the Xenon Plasma Focused Ion Beam Instrument for Semiconductor Failure Analysis Applications.

    Science.gov (United States)

    Subramaniam, Srinivas; Huening, Jennifer; Richards, John; Johnson, Kevin

    2017-08-01

    The xenon plasma focused ion beam instrument (PFIB), holds significant promise in expanding the applications of focused ion beams in new technology thrust areas. In this paper, we have explored the operational characteristics of a Tescan FERA3 XMH PFIB instrument with the aim of meeting current and future challenges in the semiconductor industry. A two part approach, with the first part aimed at optimizing the ion column and the second optimizing specimen preparation, has been undertaken. Detailed studies characterizing the ion column, optimizing for high-current/high mill rate activities, have been described to support a better understanding of the PFIB. In addition, a novel single-crystal sacrificial mask method has been developed and implemented for use in the PFIB. Using this combined approach, we have achieved high-quality images with minimal artifacts, while retaining the shorter throughput times of the PFIB. Although the work presented in this paper has been performed on a specific instrument, the authors hope that these studies will provide general insight to direct further improvement of PFIB design and applications.

  3. Beam quality improvement by population-dynamic-coupled combined guiding effect in end-pumped Nd:YVO4 laser oscillator

    Science.gov (United States)

    Shen, Yijie; Gong, Mali; Fu, Xing

    2018-05-01

    Beam quality improvement with pump power increasing in an end-pumped laser oscillator is experimentally realized for the first time, to the best of our knowledge. The phenomenon is caused by the population-dynamic-coupled combined guiding effect, a comprehensive theoretical model of which has been well established, in agreement with the experimental results. Based on an 888 nm in-band dual-end-pumped oscillator using four tandem Nd:YVO4 crystals, the output beam quality of M^2= 1.1/1.1 at the pump power of 25 W is degraded to M^2 = 2.5/1.8 at 75 W pumping and then improved to M^2= 1.8/1.3 at 150 W pumping. The near-TEM_{00} mode is obtained with the highest continuous-wave output power of 72.1 W and the optical-to-optical efficiency of 48.1%. This work demonstrates great potential to further scale the output power of end-pumped laser oscillator while keeping good beam quality.

  4. High Efficient THz Emission From Unbiased and Biased Semiconductor Nanowires Fabricated Using Electron Beam Lithography

    Energy Technology Data Exchange (ETDEWEB)

    Balci, Soner; Czaplewski, David A.; Jung, Il Woong; Kim, Ju-Hyung; Hatami, Fariba; Kung, Patrick; Kim, Seongsin Margaret

    2017-07-01

    Besides having perfect control on structural features, such as vertical alignment and uniform distribution by fabricating the wires via e-beam lithography and etching process, we also investigated the THz emission from these fabricated nanowires when they are applied DC bias voltage. To be able to apply a voltage bias, an interdigitated gold (Au) electrode was patterned on the high-quality InGaAs epilayer grown on InP substrate bymolecular beam epitaxy. Afterwards, perfect vertically aligned and uniformly distributed nanowires were fabricated in between the electrodes of this interdigitated pattern so that we could apply voltage bias to improve the THz emission. As a result, we achieved enhancement in the emitted THz radiation by ~four times, about 12 dB increase in power ratio at 0.25 THz with a DC biased electric field compared with unbiased NWs.

  5. High energy extraction of electron beam pumped KrF lasers at multi atmospheres

    NARCIS (Netherlands)

    Kleikamp, B.M.H.H.; Witteman, W.J.

    1984-01-01

    The construction is described of a simple and compact KrF laser with electron beam excitation. The electron beam is generated in a coaxial vacuum diode, driven directly by a ten-stage coaxial Marx generator. A flat MgF2 outcoupler and a suprasil roof prism, protected by an MgF2 window, proved to be

  6. Cladding-pumped Yb-doped fiber laser with vortex output beam

    OpenAIRE

    Lin, Di; Clarkson, William

    2015-01-01

    A simple technique for selectively generating a donut-shaped LP11 mode with vortex phase front in a cladding-pumped ytterbium-doped fiber laser is reported. The laser yielded 36W of output with a slope efficiency of 74%.

  7. Molecular-beam epitaxy growth and structural characterization of semiconductor-ferromagnet heterostructures by grazing incidence X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Satapathy, D.K.

    2005-12-19

    The present work is devoted to the growth of the ferromagnetic metal MnAs on the semiconductor GaAs by molecular-beam epitaxy (MBE). The MnAs thin films are deposited on GaAs by molecular-beam epitaxy (MBE). Grazing incidence diffraction (GID) and reflection high-energy electron diffraction (RHEED) are used in situ to investigate the nucleation, evolution of strain, morphology and interfacial structure during the MBE growth. Four stages of the nucleation process during growth of MnAs on GaAs(001) are revealed by RHEED azimuthal scans. GID shows that further growth of MnAs films proceed via the formation of relaxed islands at a nominal thickness of 2.5 ML which increase in size and finally coalesce to form a continuous film. Early on, an ordered array of misfit dislocations forms at the interface releasing the misfit strain even before complete coalescence occurs. The fascinating complex nucleation process of MnAs on GaAs(0 0 1) contains elements of both Volmer-Weber and Stranski-Krastanov growth. A nonuniform strain amounting to 0.66%, along the [1 -1 0] direction and 0.54%, along the [1 1 0] direction is demonstrated from x-ray line profile analysis. A high correlation between the defects is found along the GaAs[1 1 0] direction. An extremely periodic array of misfit dislocations with a period of 4.95{+-}0.05 nm is formed at the interface along the [1 1 0] direction which releases the 7.5% of misfit. The inhomogeneous strain due to the periodic dislocations is confined at the interface within a layer of 1.6 nm thickness. The misfit along the [1 -1 0] direction is released by the formation of a coincidence site lattice. (orig.)

  8. Ultrafast supercontinuum fiber-laser based pump-probe scanning magneto-optical Kerr effect microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution.

    Science.gov (United States)

    Henn, T; Kiessling, T; Ossau, W; Molenkamp, L W; Biermann, K; Santos, P V

    2013-12-01

    We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast "white light" supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

  9. Characteristics of a laser beam produced by using thermal lensing effect compensation in a fiber-coupled laser-diode-pumped Nd:YAG ceramic laser

    International Nuclear Information System (INIS)

    Kim, Duck-Lae; Kim, Byung-Tai

    2010-01-01

    The characteristics of a laser beam produced by using thermal lensing effect compensation in a fiber-coupled laser-diode Nd:YAG ceramic laser were investigated. The thermal lensing effect was compensated for by using a compensator, which was 25 mm away from the laser rod, with a focal length of 30 mm and an effective clear aperture of 22 mm. Using a compensator, the divergence and the beam propagation factor M 2 of the output beam were 5.5 mrad and 2.4, respectively, under a pump power of 12W. The high-frequency components in the compensated laser beam were removed.

  10. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory.

    Science.gov (United States)

    El-Atwani, O; Norris, S A; Ludwig, K; Gonderman, S; Allain, J P

    2015-12-16

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  11. Thermally induced optical deformation of a Nd:YVO4 active disk under the action of multi-beam spatially periodic diode pumping

    Science.gov (United States)

    Guryev, D. A.; Nikolaev, D. A.; Tsvetkov, V. B.; Shcherbakov, I. A.

    2018-05-01

    A study of how the transverse distribution of an optical path changes in a Nd:YVO4 active disk was carried out in a ten-beam spatially periodic diode pumping in the one-dimensional case. The pumping beams’ transverse dimensions were comparable with the distances between them. The investigations were carried out using laser interferometry methods. It was found that the optical thickness changing in the active disk along the line of pumping spots was well described by a Gaussian function.

  12. Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, K; Wang, P; Pan, W W; Wu, X Y; Yue, L; Gong, Q; Wang, S M

    2015-01-01

    We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

  13. Conceptual design of a large E-beam-pumped KrF laser for ICF commercial applications

    International Nuclear Information System (INIS)

    Harris, D.B.; Waganer, L.M.; Zuckerman, D.S.; Bowers, D.A.

    1986-01-01

    Two types of KrF lasers appear attractive as a driver for an ICF electric power plant. The original concept uses large electron-beam-pumped amplifiers and pure angular multiplexing to deliver short, shaped pulses to the target. A recently conceived alternate concept uses many small, long-pulse e-beam sustained discharge lasers which transfer their energy through the forward Raman process to a multiplexed set of beams to deliver the energy to target. Preliminary comparisons of the two systems indicate that the original concept has both a lower cost and a lower system efficiency, and both concepts appear to be nearly equally attractive as an ICF driver for an electric power plant. This paper examines a 4.8 MJ, 5 Hz KrF laser system designed using the original concept. The laser uses 24 main amplifiers arranged in eight sets of three amplifiers each. This layout optimizes both the optical system and the gas flow system, and uses a simple target illumination scheme that provides neutron shielding to allow hands-on maintenance in the laser hall

  14. Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices

    International Nuclear Information System (INIS)

    Gonzalez-Varona, O.; Perez-Rodriguez, A.; Garrido, B.; Bonafos, C.; Lopez, M.; Morante, J.R.; Montserrat, J.; Rodriguez, R.

    2000-01-01

    Intense white (to the eye) luminescence has been obtained by multiple implantation of Si + and C + ions into thermal SiO 2 and a post-implantation annealing process. This white emission is a consequence of the convolution of three luminescence peaks centred at about 1.45 eV (infrared with a long tail in the red), 2.1 eV (yellow) and 2.8 eV (blue). These emissions have been correlated to the synthesis of nanocrystals of Si and SiC, and the existence of C-rich precipitates. Cross section TEM shows a buried layer with dark contrast, which correlates with the maximum of the C implanted profile, and likely with a high density of C-rich amorphous domains. Besides, two kinds of nanocrystalline precipitates are found, which have been identified as Si and hexagonal 6H-SiC by electron diffraction experiments. To our knowledge, these data provide the first experimental evidence on the ion beam synthesis of nanocrystalline 6H-SiC embedded in SiO 2 . Correlation with previous data gives support to the assignment of the infrared, yellow and blue peaks with the Si, C-rich and SiC precipitate phases and/or its interfaces with SiO 2

  15. Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Varona, O.; Perez-Rodriguez, A.; Garrido, B.; Bonafos, C.; Lopez, M.; Morante, J.R.; Montserrat, J.; Rodriguez, R

    2000-03-01

    Intense white (to the eye) luminescence has been obtained by multiple implantation of Si{sup +} and C{sup +} ions into thermal SiO{sub 2} and a post-implantation annealing process. This white emission is a consequence of the convolution of three luminescence peaks centred at about 1.45 eV (infrared with a long tail in the red), 2.1 eV (yellow) and 2.8 eV (blue). These emissions have been correlated to the synthesis of nanocrystals of Si and SiC, and the existence of C-rich precipitates. Cross section TEM shows a buried layer with dark contrast, which correlates with the maximum of the C implanted profile, and likely with a high density of C-rich amorphous domains. Besides, two kinds of nanocrystalline precipitates are found, which have been identified as Si and hexagonal 6H-SiC by electron diffraction experiments. To our knowledge, these data provide the first experimental evidence on the ion beam synthesis of nanocrystalline 6H-SiC embedded in SiO{sub 2}. Correlation with previous data gives support to the assignment of the infrared, yellow and blue peaks with the Si, C-rich and SiC precipitate phases and/or its interfaces with SiO{sub 2}.

  16. Dual-wavelength vortex beam with high stability in a diode-pumped Yb:CaGdAlO4 laser

    Science.gov (United States)

    Shen, Yijie; Meng, Yuan; Fu, Xing; Gong, Mali

    2018-05-01

    We present a stable dual-wavelength vortex beam carrying orbital angular momentum (OAM) with two spectral peaks separated by a few terahertz in a diode-pumped Yb:CaGdAlO4 (CALGO) laser. The dual-wavelength spectrum is controlled by the pump power and off-axis loss in a laser resonator, arising from the broad emission bandwidth of Yb:CALGO. The OAM beam is obtained by a pair of cylindrical lenses serving as a π/2 convertor for high-order Hermite–Gaussian modes. The stability is verified by the fact that a 1\\hbar OAM beam with two spectral peaks at 1046.1 nm and 1057.2 nm (3.01 THz interval) can steadily operate for more than 3 h. It has great potential for scaling the application of OAM beams in terahertz spectroscopy, high-resolution interferometry, and so on.

  17. Effect of an ultrafast laser induced plasma on a relativistic electron beam to determine temporal overlap in pump-probe experiments.

    Science.gov (United States)

    Scoby, Cheyne M; Li, R K; Musumeci, P

    2013-04-01

    In this paper we report on a simple and robust method to measure the absolute temporal overlap of the laser and the electron beam at the sample based on the effect of a laser induced plasma on the electron beam transverse distribution, successfully extending a similar method from keV to MeV electron beams. By pumping a standard copper TEM grid to form the plasma, we gain timing information independent of the sample under study. In experiments discussed here the optical delay to achieve temporal overlap between the pump electron beam and probe laser can be determined with ~1 ps precision. Copyright © 2012 Elsevier B.V. All rights reserved.

  18. Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

    Science.gov (United States)

    Chen, Tai-Chou Papo

    The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

  19. Development of a Pump-Probe System using a Non-Coated ZnSe Beam Splitter Cube for an MIR-FEL

    CERN Document Server

    Heya, Manabu; Horiike, Hiroshi; Ishii, Katsonuri; Suzuki, Sachiko

    2004-01-01

    A pump-probe technique is essential for a proper understanding of laser interaction with tissue and material. Our pump-probe system divides the incident mid-infrared Free Electron Laser (MIR-FEL) into two beams with equal intensity, and crosses simultaneously the two incoming beams at the same position. One is for a pump beam, another is for a probe beam. Time-resolved absorption spectroscopy involving this technique gives us information on the vibrational dynamics of molecules. We have developed this system for an MIR-FEL using a non-coating ZnSe beam splitter cube. The beam splitter cube is composed of two ZnSe prisms in the shape like a trapezoid. The two pulses with equal intensity are generated due to Fresnel reflection and transmission at the boundary between two prisms, then are reflected due to total reflection at other side boundaries between each prism and air, and illuminate simultaneously the same spot. We have conducted a proof-of-concept of experiment of this system using an MIR-FEL. We showed t...

  20. Performance demonstration of a single-frequency optically-pumped cesium beam frequency standard for space applications

    Science.gov (United States)

    Lecomte, S.; Haldimann, M.; Ruffieux, R.; Thomann, P.; Berthoud, P.

    2017-11-01

    Observatoire de Neuchâtel (ON) is developing a compact optically-pumped cesium beam frequency standard in the frame of an ESA-ARTES 5 project. The simplest optical scheme, which is based on a single optical frequency for both preparation and detection processes of atoms, has been chosen to fulfill reliability constraints of space applications. With our laboratory demonstrator operated at 852 nm (D2 line), we have measured a frequency stability of σy=2.74x10-12 τ -1/2, which is compliant with the Galileo requirement. The atomic resonator is fully compliant to be operated with a single diode laser at 894 nm (D1 line). Sensitivity measurements of the clock signal to the microwave power and to the optical pumping power are also presented. Present performance limitations are discussed and further improvements are proposed in order to reach our ultimate frequency stability goal of σy=1x10-12 τ -1/2. The clock driving software is also briefly described.

  1. The TEXTOR helium self-pumping experiment: Design, plans, and supporting ion-beam data on helium retention in nickel

    International Nuclear Information System (INIS)

    Brooks, J.N.; Krauss, A.; Mattas, R.F.; Smith, D.L.; Nygren, R.E.; Doyle, B.L.; McGrath, R.T.; Walsh, D.; Dippel, K.H.; Finken, K.H.

    1990-01-01

    A proof-of-principle experiment to demonstrate helium self-pumping in a tokamak is being undertaken in TEXTOR. The experiment will use a helium self-pumping module installed in a modified ALT-I limiter head. The module consists of two, ∼25 x 25 cm 2 heated nickel alloy trapping plates, a nickel deposition filament array, and associated diagnostics. Between plasma shots a coating of ∼50 angstrom nickel will be deposited on the two trapping plates. During a shot helium and hydrogen ions will impinge on the plates through a ∼3 cm wide entrance slot. The helium removal capability, due to trapping in the nickel, will be assessed for a variety of plasma conditions. In support of the tokamak experiment, the trapping of helium over a range of ion fluences and surface temperatures, and detrapping during subsequent exposure to hydrogen, were measured in ion beam experiments using evaporated nickel surfaces similar to that expected in TEXTOR. Also, the retention of H and He after exposure of a nickel surface to mixed He/H plasmas has bee measured. The results appear favorable, showing high helium trapping (∼10--50% He/Ni) and little or no detrapping by hydrogen. The TEXTOR experiment is planned to begin in 1991. 12 refs., 2 figs., 2 tabs

  2. The TEXTOR helium self-pumping experiment: Design, plans, and supporting ion-beam data on helium retention in nickel

    International Nuclear Information System (INIS)

    Brooks, J.N.; Krauss, A.; Mattas, R.F.; Smith, D.L.; Nygren, R.E.; Doyle, B.L.; McGrath, R.T.; Walsh, D.; Dippel, K.H.; Finken, K.H.

    1990-01-01

    A proof-of-principle experiment to demonstrate helium self-pumping in a tokamak is being undertaken in TEXTOR. The experiment will use a helium self-pumping module installed in a modified ALT-I limiter head. The module consists of two, ≅ 25x25 cm 2 heated nickel alloy trapping plates, a nickel deposition filament array, and associated diagnostics. Between plasma shots a coating of ≅ 50A nickel will be deposited on the two trapping plates. During a shot helium and hydrogen ions will impinge on the plates through a ≅ 3 cm wide entrance slot. The helium removal capability, due to trapping in the nickel, will be assessed for a variety of plasma conditions. In support of the tokamak experiment, the trapping of helium over a range of ion fluences and surface temperatures, and detrapping during subsequent exposure to hydrogen, were measured in ion beam experiments using evaporated nickel surfaces similar to that expected in TEXTOR. Also, the retention of H and He after exposure of a nickel surface to mixed He/H plasmas has been measured. The results appear favorable, showing high helium trapping (≅ 10-50% He/Ni) and little or no detrapping by hydrogen. The TEXTOR experiment is planned to begin in 1991. (orig.)

  3. Halogen doping of II-VI semiconductors during molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A.; Litz, Th.; Fischer, F.; Heinke, H.; Scholl, S.; Hommel, D.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

    1994-04-14

    Results on the halogen doping of CdTe, (CdMn)Te as well as (CdMg)Te thin films and quantum well structures are reported. The structures were grown by molecular beam epitaxy. The samples have been investigated by Van der Pauw, photoconductivity, X-ray diffraction, XPS and SIMS measurements. ZnCl[sub 2] and ZnBr[sub 2] have been used as dopant sources. Free carrier concentrations at room temperature above 10[sup 18] cm[sup -3] can easily be achieved for CdTe for a wide range of Cd/Te flux ratios and substrate temperatures. In the ternary alloys, the free carrier concentration decreases drastically with increasing x-values, despite a constant incorporation of the dopant species. In addition, persistent photoconductivity has been observed in n-type doped ternary thin films at low temperatures. The decrease of the free carrier concentration with x-value is common to other wide-gap ternary alloys, and the reason for it is discussed in the frame of DX-like deep donor impurities in ternary II-VI compounds. In first experiments on planar halogen doping of CdTe, a doping level of 5x10[sup 18] cm[sup -3] could be reached in the doped regions, the highest value ever reported for CdTe. A clear influence of dopant incorporation on the structural quality of CdTe thin films has been seen even for dopant concentrations of as low as 10[sup 18] cm[sup -3]. The FWHM of the rocking curves decreased by a factor of 2 with increasing dopant incorporation. SIMS as well as XPS measurements demonstrate that the Cl/Zn and Br/Zn ratio in the doped films is 2/1, but no chemical shift corresponding to Zn-Cl or Zn-Br bonds could be detected. A model for the incorporation of the halogens is proposed on the basis of these results

  4. Implementation of intra-cavity beam shaping technique to enhance pump efficiency

    CSIR Research Space (South Africa)

    Litvin, IA

    2012-02-01

    Full Text Available In this work the author proposes an implementation of a new intra-cavity beam shaping technique to vary the intensity distribution of the fundamental mode in a resonator cavity while maintaining a constant intensity distribution at the output...

  5. Amplification of picosecond pulse by electron-beam pumped KrF laser amplifiers. Denshi beam reiki KrF laser zofukuki ni yoru piko byo pulse no zofuku

    Energy Technology Data Exchange (ETDEWEB)

    Okuda, I.; Tomie, T.; Owadano, Y.; Yano, M. (Electrotechnical Laboratory, Tsukuba (Japan))

    1991-08-20

    Experiments on the amplification of a picosecond pulse by electron-beam pumped KrF laser amplifiers were carried out for the purpose of its application to the field such as excitation light source for soft X-ray laser which requires large energy besides peak power. The picosecond pulse was amplified by a discharge pumped KrF amplifier and two electron-beam pumped KrF amplifiers(at the middle stage and the final stage). The energy of 4J, which was the largest energy for short pulse excimer laser so far, was obtained by these devices. About 90% of the window area of the final amplifier with 29cm diameter was filled by the input beam, and energy density of the picosecond beam reached 3.9 times saturation energy density. Measured energy of amplified spontaneous emission(ASE) showed good agreement with the theoretically estimated value. Most of ASE was derived from the discharge pumped laser as the first amplifier. As for the focused power density, the power density ratio of the picosecond pulse to ASE was estimated to be as large as 10{sup 5}. 11 refs., 4 figs.

  6. Mechanical design and fabrication of the transverse field focusing (TFF) matching/pumping section for negative ion based neutral beam systems

    International Nuclear Information System (INIS)

    Purgalis, P.; Anderson, O.A.; Koehler, G.W.; Maruyama, Y.; Matuk, C.A.; Owren, H.M.; Paterson, J.A.; Wandesforde, A.H.

    1985-11-01

    A negative ion based neutral beam injection system is under development as proof-of-principle demonstration of a radiation-hardened beamline. The beamline consists of a source, a pre-accelerator, a matching/pumping (M/P) section, and an accelerator. The function of the M/P section is to provide vacuum pumping, to remove electrons, to provide beam edge confinement, to compress the beam thickness to match the requirements of the accelerator, and to transport the 1A, 80 keV, 25 cm high H - ribbon beam to the accelerator entrance. Details of the design and fabrication of the M/P section are presented. The M/P section has eight separate, high voltage electrodes forming an ''S'' shaped beam path. Electrons are removed by the electron trap in this path. Beam edge confinement and thickness compression is accomplished by the curvature and face contour of the electrodes. Design heat loads are described. Electrode fabrication is discussed, and the cryopumps used are described

  7. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  8. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  9. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  10. The ATLAS inner detector semiconductor tracker (Si and GaAs strips): review of the 1995 beam tests at the CERN SPS H8 beamline

    International Nuclear Information System (INIS)

    Moorhead, G.F.

    1995-01-01

    This talk will consist of a brief review of the ATLAS Inner Detector (ID) Semiconductor Tracker (SCT) strip detector (both silicon and gallium arsenide) beam tests conducted at the ATLAS test beam facility at the CERN SPS H8 beamline. It will include a brief overview of the H8 facilities, the experimental layout of the SCT/Strip apparatus, the data acquisition system, some of the online software tools and the high precision silicon hodoscope and timing modules used. A very brief indication of some of the main varieties of detector systems tested and the measurements performed will be given. Throughout some emphasis will be placed on the contributions and-interests of members of the Melbourne group. (author)

  11. Sodium pumping: pump problems

    International Nuclear Information System (INIS)

    Guer, M.; Guiton, P.

    Information on sodium pumps for LMFBR type reactors is presented concerning ring pump design, pool reactor pump design, secondary pumps, sodium bearings, swivel joints of the oscillating annulus, and thermal shock loads

  12. Particularities of optical pumping effects in cold and ultra-slow beams of Na and Cs in the case of cyclic transitions

    KAUST Repository

    Bruvelis, M.; Cinins, A.; Leitis, A.; Efimov, D. K.; Bezuglov, N. N.; Chirtsov, A. S.; Fuso, F.; Ekers, Aigars

    2015-01-01

    The time-dependent population dynamics of hyperfine (HF) levels of n2p3/2 states is examined for cyclic transitions in alkali atoms. We study a slow and cold atomic beam of Na (n = 3) and Cs (n = 6), taking into account the long interaction time of light with atoms (~200 μs) inside the resonant laser beam. Simple analytical expressions for the populations of the excited states and for the intensities of the absorption lines are derived for a three-level system model. We show that at moderate pump laser power the mixing of HF levels is sufficient to form a flow of population from a cyclic transition to partially open transitions. We discuss various phenomena associated with the evolution of optical pumping that cannot be explained by general analysis of two-level system model.

  13. Particularities of optical pumping effects in cold and ultra-slow beams of Na and Cs in the case of cyclic transitions

    KAUST Repository

    Bruvelis, M.

    2015-12-09

    The time-dependent population dynamics of hyperfine (HF) levels of n2p3/2 states is examined for cyclic transitions in alkali atoms. We study a slow and cold atomic beam of Na (n = 3) and Cs (n = 6), taking into account the long interaction time of light with atoms (~200 μs) inside the resonant laser beam. Simple analytical expressions for the populations of the excited states and for the intensities of the absorption lines are derived for a three-level system model. We show that at moderate pump laser power the mixing of HF levels is sufficient to form a flow of population from a cyclic transition to partially open transitions. We discuss various phenomena associated with the evolution of optical pumping that cannot be explained by general analysis of two-level system model.

  14. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  15. Strain at a semiconductor nanowire-substrate interface studied using geometric phase analysis, convergent beam electron diffraction and nanobeam diffraction

    DEFF Research Database (Denmark)

    Persson, Johan Mikael; Wagner, Jakob Birkedal; Dunin-Borkowski, Rafal E.

    2011-01-01

    Semiconductor nanowires have been studied using electron microscopy since the early days of nanowire growth, e.g. [1]. A common approach for analysing nanowires using transmission electron microscopy (TEM) involves removing them from their substrate and subsequently transferring them onto carbon...... with CBED and NBED [4,5] have shown a high degree of consistency. Strain has previously only been measured in nanowires removed from their substrate [6], or only using GPA [7]. The sample used for the present investigation was an InP nanowire grown on a Si substrate using metal organic vapor phase...

  16. Landau quantization effects on hole-acoustic instability in semiconductor plasmas

    Science.gov (United States)

    Sumera, P.; Rasheed, A.; Jamil, M.; Siddique, M.; Areeb, F.

    2017-12-01

    The growth rate of the hole acoustic waves (HAWs) exciting in magnetized semiconductor quantum plasma pumped by the electron beam has been investigated. The instability of the waves contains quantum effects including the exchange and correlation potential, Bohm potential, Fermi-degenerate pressure, and the magnetic quantization of semiconductor plasma species. The effects of various plasma parameters, which include relative concentration of plasma particles, beam electron temperature, beam speed, plasma temperature (temperature of electrons/holes), and Landau electron orbital magnetic quantization parameter η, on the growth rate of HAWs, have been discussed. The numerical study of our model of acoustic waves has been applied, as an example, to the GaAs semiconductor exposed to electron beam in the magnetic field environment. An increment in either the concentration of the semiconductor electrons or the speed of beam electrons, in the presence of magnetic quantization of fermion orbital motion, enhances remarkably the growth rate of the HAWs. Although the growth rate of the waves reduces with a rise in the thermal temperature of plasma species, at a particular temperature, we receive a higher instability due to the contribution of magnetic quantization of fermions to it.

  17. Extending the detection limit of dopants for focused ion beam prepared semiconductor specimens examined by off-axis electron holography

    DEFF Research Database (Denmark)

    Cooper, David; Rivallin, Pierrette; Hartmann, Jean-Michel

    2009-01-01

    Silicon specimens containing p-n junctions have been prepared for examination by off-axis electron holography using focused ion beam (FIB) milling. FIB milling modifies the surfaces of the specimens due to gallium implantation and the creation of defects which has the effect of reducing the active...

  18. Direct emission of chirality controllable femtosecond LG01 vortex beam

    Science.gov (United States)

    Wang, S.; Zhang, S.; Yang, H.; Xie, J.; Jiang, S.; Feng, G.; Zhou, S.

    2018-05-01

    Direct emission of a chirality controllable ultrafast LG01 mode vortex optical beam from a conventional z-type cavity design SESAM (SEmiconductor Saturable Absorber Mirror) mode locked LD pumped Yb:Phosphate laser has been demonstrated. A clean 360 fs vortex beam of ˜45.7 mW output power has been achieved. A radial shear interferometer has been built to determine the phase singularity and the wavefront helicity of the ultrafast output laser. Theoretically, it is found that the LG01 vortex beam is obtained via the combination effect of diagonal HG10 mode generation by off-axis pumping and the controllable Gouy phase difference between HG10 and HG01 modes in the sagittal and tangential planes. The chirality of the LG01 mode can be manipulated by the pump position to the original point of the laser cavity optical axis.

  19. Beam quality management by periodic reproduction of wavefront aberrations in end-pumped Nd:YVO4 laser amplifiers.

    Science.gov (United States)

    Liu, Bin; Liu, Chong; Shen, Lifeng; Wang, Chunhua; Ye, Zhibin; Liu, Dong; Xiang, Zhen

    2016-04-18

    A method for beam quality management is presented in a master oscillator power amplifier (MOPA) using Nd:YVO4 as the gain medium by extra-cavity periodic reproduction of wavefront aberrations. The wavefront aberration evolution of the intra-cavity beams is investigated for both symmetrical and asymmetrical resonators. The wavefront aberration reproduction process is successfully realized outside the cavity in four-stage amplifiers. In the MOPA with a symmetrical oscillator, the laser power increases linearly and the beam quality hardly changes. In the MOPA with an asymmetrical oscillator, the beam quality is deteriorated after the odd-stage amplifier and is improved after the even-stage amplifier. The wavefront aberration reproduction during the extra-cavity beam propagation in the amplifiers is equivalent to that during the intra-cavity propagation. This solution helps to achieve the effective beam quality management in laser amplifier chains.

  20. Device for irradiation of a target surface by a variable electron beam, especially electron beam generator, in order to produce semiconductor components

    International Nuclear Information System (INIS)

    Wolfe, J.E.

    1978-01-01

    For the lithographic device there is used a field emission source for thermal ions with a tungsten cathode and a zirconium top as an electron gain. For production of IC chips the electron beam of 1000 A/cm 2 can be focused on a mask template, mounted on a x/Y table, by means of a system of lenses. The electromagnetic focusing device with a small aberration coefficient is designed in such a way that there is obtained a large focal length on the image side as compared to the focal length on the object side. Thereby a small angular deflection of the beam in the focusing device causes a large deflection at the target. The control is performed by a processor. (RW) [de

  1. Semiconductor Photonic Components for RF Applications

    National Research Council Canada - National Science Library

    Yu, Paul

    2002-01-01

    ... time delay beam formation and beam steering subsystem in phased array antennas. Device and material approaches were investigated to improve the modulator based on semiconductor structures for achieving high spur free dynamic range (SFDR...

  2. Semiconductor Photonic Components for RF Applications

    National Research Council Canada - National Science Library

    Yu, Paul

    2001-01-01

    ... delay beam formation and beam steering subsystems in phased array antennas. Device and material approaches were investigated to improve the modulator based on semiconductor structures for achieving high spur free dynamic range (SFDR...

  3. Study of a plasma created by an accelerated proton beam for the characterization of a nuclear pumped laser medium

    International Nuclear Information System (INIS)

    Vialle, M.

    1985-04-01

    Processes leading to laser effect in nuclear induced plasmas can be studied with simulation experiments using charged particles beams. Such an experiment has been performed with a proton beam (2 MeV, 2 μA/cm 2 ) produced by a Van de Graaff accelerator. This beam is an excitation and ionisation source quite comparable to the laser medium source of a reactor experiment. The plasma created in a Ne target (about 100 torrs) containing N 2 impurities has been studied: - experimentally using R.F. diagnostics and spectroscopy; - theoretically by calculating the electronic distribution function in the low and medium energy region [fr

  4. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nishiwaki, M.; Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-05-07

    High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

  5. Application of semiconductor MOSFET and pin diode dosimeters to epithermal neutron beam dose distribution measurements in phantoms

    International Nuclear Information System (INIS)

    Carolan, M.G.; Wallace, S.A.; Allen, B.J.; Rosenfeld, A.B.; Mathur, J.N.

    1996-01-01

    For any clinical application of Boron Neutron Capture Therapy (BNCT) fast and accurate dose calculations will be required for treatment planning. Such calculations are also necessary for the planning and interpretation of results from pre-clinical and clinical trials where the speed of calculation is not so critical. A dose calculation system based on the MCNP Monte Carlo Neutron transport code has been developed by Wallace. This system takes image data from CT scans and constructs a voxel based geometrical model for input into MCNP. To validate the calculations, a number of phantoms were constructed and exposed in the HB11 epithermal neutron beam at the HFR of the CEC Joint Research Centre in Petten. The doses recorded by arrays of PIN diode neutron dosimeters and MOSFET gamma dosimeters in these phantoms were compared with the calculated results from the MCNP dose planning system. Initial results have been reported elsewhere. Poster 197. (author)

  6. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  7. Theory of semiconductor laser cooling

    Science.gov (United States)

    Rupper, Greg

    Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order to study semiconductor laser cooling at cryogenic temperatures, it is crucial that the theory include both the effects of excitons and the electron-hole plasma. In this dissertation, I present a theoretical analysis of laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. This theory has been analyzed from a temperature 10K to 500K. It is shown that at high temperatures (above 300K), cooling can be modeled using older models with a few parameter changes. Below 200K, band filling effects dominate over Auger recombination. Below 30K excitonic effects are essential for laser cooling. In all cases, excitonic effects make cooling easier then predicted by a free carrier model. The initial cooling model is based on the assumption of a homogeneous undoped semiconductor. This model has been systematically modified to include effects that are present in real laser cooling experiments. The following modifications have been performed. (1) Propagation and polariton effects have been included. (2) The effect of p-doping has been included. (n-doping can be modeled in a similar fashion.) (3) In experiments, a passivation layer is required to minimize non-radiative recombination. The passivation results in a npn heterostructure. The effect of the npn heterostructure on cooling has been analyzed. (4) The effect of a Gaussian pump beam was analyzed and (5) Some of the parameters in the cooling model have a large uncertainty. The effect of modifying these parameters has been analyzed. Most of the extensions to the original theory have only had a modest effect on the overall results. However we find that the current passivation technique may not be sufficient to allow cooling. The passivation technique currently used appears

  8. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  9. SEMICONDUCTOR INTEGRATED CIRCUITS: An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

    Science.gov (United States)

    Fangxiong, Chen; Min, Lin; Heping, Ma; Hailong, Jia; Yin, Shi; Forster, Dai

    2009-08-01

    An asymmetric MOSFET-C band-pass filter (BPF) with on chip charge pump auto-tuning is presented. It is implemented in UMC (United Manufacturing Corporation) 0.18 μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump outputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point (IIP3) is 16.621 dBm, with 50 Ω as the source impedance. The input referred noise is about 47.455 μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm2 and it can be utilized in GPS (global positioning system) and Bluetooth systems.

  10. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  11. Innovation and optimization of a method of pump-probe polarimetry with pulsed laser beams in view of a precise measurement of parity violation in atomic cesium

    International Nuclear Information System (INIS)

    Chauvat, D.

    1997-10-01

    While Parity Violation (PV) experiments on highly forbidden transitions have been using detection of fluorescence signals; our experiment uses a pump-probe scheme to detect the PV signal directly on a transmitted probe beam. A pulsed laser beam of linear polarisation ε 1 excites the atoms on the 6S-7S cesium transition in a colinear electric field E || k(ex). The probe beam (k(pr) || k(ex)) of linear polarisation ε 2 tuned to the transition 7S-6P(3/2) is amplified. The small asymmetry (∼ 10 -6 ) in the gain that depends on the handedness of the tri-hedron (E, ε 1 , ε 2 ) is the manifestation of the PV effect. This is measured as an E-odd apparent rotation of the plane of polarization of the probe beam; using balanced mode polarimetry. New criteria of selection have been devised, that allow us to distinguish the true PV-signal against fake rotations due to electromagnetic interferences, geometrical effects, polarization imperfections, or stray transverse electric and magnetic fields. These selection criteria exploit the symmetry of the PV-rotation - linear dichroism - and the revolution symmetry of the experiment. Using these criteria it is not only possible to reject fake signals, but also to elucidate the underlying physical mechanisms and to measure the relevant defects of the apparatus. The present signal-to-noise ratio allows embarking in PV measurements to reach the 10% statistical accuracy. A 1% measurement still requires improvements. Two methods have been demonstrated. The first one exploits the amplification of the asymmetry at high gain - one major advantage provided by our detection method based on stimulated emission. The second method uses both a much higher incident intensity and a special dichroic component which magnifies tiny polarization rotations. (author)

  12. Diode-pumped, single frequency Nd:YLF laser for 60-beam OMEGA laser pulse-shaping system

    International Nuclear Information System (INIS)

    Okishev, A.V.; Seka, W.

    1997-01-01

    The operational conditions of the OMEGA pulse-shaping system require an extremely reliable and low-maintenance master oscillator. The authors have developed a diode-pumped, single-frequency, pulsed Nd:YLF laser for this application. The laser generates Q-switched pulses of ∼160-ns duration and ∼10-microJ energy content at the 1,053-nm wavelength with low amplitude fluctuations (<0.6% rms) and low temporal jitter (<7 ns rms). Amplitude and frequency feedback stabilization systems have been used for high long-term amplitude and frequency stability

  13. Orientation-free and differentially pumped addition of a low-flux reactive gas beam to a surface analysis system.

    Science.gov (United States)

    Harthcock, Colin; Jahanbekam, Abdolreza; Eskelsen, Jeremy R; Lee, David Y

    2016-11-01

    We describe an example of a piecewise gas chamber that can be customized to incorporate a low flux of gas-phase radicals with an existing surface analysis chamber for in situ and stepwise gas-surface interaction experiments without any constraint in orientation. The piecewise nature of this gas chamber provides complete angular freedom and easy alignment and does not require any modification of the existing surface analysis chamber. In addition, the entire gas-surface system is readily differentially pumped with the surface chamber kept under ultra-high-vacuum during the gas-surface measurements. This new design also allows not only straightforward reconstruction to accommodate the orientation of different surface chambers but also for the addition of other desired features, such as an additional pump to the current configuration. Stepwise interaction between atomic oxygen and a highly ordered pyrolytic graphite surface was chosen to test the effectiveness of this design, and the site-dependent O-atom chemisorption and clustering on the graphite surface were resolved by a scanning tunneling microscope in the nm-scale. X-ray photoelectron spectroscopy was used to further confirm the identity of the chemisorbed species on the graphite surface as oxygen.

  14. Structures and electronics of buried and unburied semiconductor interfaces

    International Nuclear Information System (INIS)

    Kamiya, Itaru

    2011-01-01

    The structure of interfaces plays an important role in determining the electronic properties of semiconductor nanostructures. Here, such examples are shown and discussed using semiconductor nanostructures prepared by molecular beam epitaxy and colloidal synthesis.

  15. Tokamak pump limiters

    International Nuclear Information System (INIS)

    Conn, R.W.

    1984-05-01

    Recent experiments with a scoop limiter without active internal pumping have been carried out in the PDX tokamak with up to 6MW of auxiliary neutral beam heating. Experiments have also been done with a rotating head pump limiter in the PLT tokamak in conjunction with RF plasma heating. Extensive experiments have been done in the ISX-B tokamak and first experiments have been completed with the ALT-I limiter in TEXTOR. The pump limiter modules in these latter two machines have internal getter pumping. Experiments in ISX-B are with ohmic and auxiliary neutral beam heating. The results in ISX-B and TEXTOR show that active density control and particle removal is achieved with pump limiters. In ISX-B, the boundary layer (or scape-off layer) plasma partially screens the core plasma from gas injection. In both ISX-B and TEXTOR, the pressure internal to the module scales linearly with plasma density but in ISX-B, with neutral beam injection, a nonlinear increase is observed at the highest densities studied. Plasma plugging is the suspected cause. Results from PDX suggest that a region may exist in which core plasma energy confinement improves using a pump limiter during neutral beam injection. Asymmetric radial profiles and an increased edge electron temperature are observed in discharges with improved confinement. The injection of small amounts of neon into ISX-B has more clearly shown an improved electron core energy confinement during neutral beam injection. While carried out with a regular limiter, this Z-mode of operation is ideal for use with pump limiters and should be a way to achieve energy confinement times similar to values for H-mode tokamak plasmas. The implication of all these results for the design of a reactor pump limiter is described

  16. Tokamak pump limiters

    International Nuclear Information System (INIS)

    Conn, R.W.; California Univ., Los Angeles

    1984-01-01

    Recent experiments with a scoop limiter without active internal pumping have been carried out in the PDX tokamak with up to 6 MW of auxiliary neutral beam heating. Experiments have also been performed with a rotating head pump limiter in the PLT tokamak in conjunction with RF plasma heating. Extensive experiments have been done in the ISX-B tokamak and first experiments have been completed with the ALT-I limiter in TEXTOR. The pump limiter modules in these latter two machines have internal getter pumping. Experiments in ISX-B are with ohmic and auxiliary neutral beam heating. The results in ISX-B and TEXTOR show that active density control and particle removal is achieved with pump limiters. In ISX-B, the boundary layer (or scrape-off layer) plasma partially screens the core plasma from gas injection. In both ISX-B and TEXTOR, the pressure internal to the module scales linearly with plasma density but in ISX-B, with neutral beam injection, a nonlinear increase is observed at the highest densities studied. Plasma plugging is the suspected cause. Results from PDX suggest that a regime may exist in which core plasma energy confinement improves using a pump limiter during neutral beam injection. Asymmetric radial profiles and an increased edge electron temperature are observed in discharges with improved confinement. The injection of small amounts of neon into ISX-B has more clearly shown an improved electron core energy confinement during neutral beam injection. While carried out with a regular limiter, this 'Z-mode' of operation is ideal for use with pump limiters and should be a way to achieve energy confinement times similar to values for H-mode tokamak plasmas. The implication of all these results for the design of a reactor pump limiter is described. (orig.)

  17. Solid state radiative heat pump

    Science.gov (United States)

    Berdahl, P.H.

    1984-09-28

    A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

  18. Understanding Electrically Active Interface Formation on Wide Bandgap Semiconductors through Molecular Beam Epitaxy Using Fe3O 4 for Spintronics as a Base Case

    Science.gov (United States)

    Hamedani Golshan, Negar

    understanding of how to reduce APB density is of essential importance for applications of Fe3O4 films, and understanding the complex chemical and structural influences on the initial stages of film deposition is the key to eliminating APB density. This work used molecular beam epitaxy (MBE) to further understand the nucleation and growth mechanism needed to ensure single crystal film formation in a controlled orientation directly on a semiconductor (SiC) and then also on an insulating layer (MgO) that can not only align crystal structure but also provide an effective spin-aligned tunnel junction material. The starting substrate surface proved critical to effective integration, and the role of atomic hydrogen seems to be key in controlling the starting surface. We have investigated 1) the hydrogen furnace cleaning at 1600 °C of 6H-SiC (0001) substrates surfaces to produce a smooth, uniformly stepped surface and a √3x√3 R30° surface reconstruction with less than 10 at% residual oxygen contamination, 2) the atomic hydrogen cleaning of 6H-SiC (0001) substrates to produce a (1x1) surface structure with less than 7 at% residual oxygen contamination at relatively low temperature of 700 °C, 3) the atomic hydrogen cleaning of Ge (100) to produce smooth surface (RMS mechanisms for MgO and Fe3 O4. The highest quality single crystalline, epitaxial Fe 3O4 (111) films were deposited by MBE on the √3x√3 R30 surface reconstruction with less than 10 at% residual oxygen contamination 6H-SiC. The Fe3O4 film exhibits high structural order with sharp interfaces and an easy axis in-plane magnetization with a coercivity of 200 Oe. The MgO deposited by MBE on SiC prepared by the hydrogen furnace was found to have two-dimensional features that transitioned from 2D to 3D when the thickness exceeded 2nm; the structure changed from hexagonal

  19. Penis Pump

    Science.gov (United States)

    ... your appointment might be less involved. Choosing a penis pump Some penis pumps are available without a ... it doesn't get caught in the ring. Penis pumps for penis enlargement Many advertisements in magazines ...

  20. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  1. Efficacy of pumping manipulation treatment for closed lock of the temporomandibular joint disorder. Correlation between arthrographic findings using limited cone beam X-ray CT for dental use and mouth opening distance in 20 cases

    International Nuclear Information System (INIS)

    Honda, Kazuya; Uehara, Tamotsu; Arai, Yoshinori; Kashima, Masahiro; Tsukimura, Naoki; Honda, Masahiko; Iwai, Kazuo; Terakado, Masaaki; Shinoda, Koji

    2002-01-01

    A study was conducted to evaluate the efficacy of pumping manipulation treatment for closed lock of the temporomandibular joint (TMJ) disorder using limited cone beam X-ray CT for dental use. The subjects were 20 patients with TMJ closed lock. Arthrography and pumping manipulation treatment were performed, and the correlation between maximal mouth opening and arthrographic findings was examined. Arthrography showed 16 cases of anterior disk displacement, and 4 cases of sideways displacement. Disk configuration showed 15 abnormal cases and 3 cases of disk perforation. Before treatment, mouth opening distance was 24.2 mm and 1 week after treatment it was 34.4 mm. After 3 months this had improved significantly to 41.0 mm. Comparison of mouth opening distance with arthrographic findings showed that disk perforation was significantly different after 3 months. These results suggest that pumping manipulation treatment might be useful in patients with TMJ closed lock without internal derangement or disk perforation. (author)

  2. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  3. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  4. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  5. Simulations of longitudinally pumped dye laser amplifier

    International Nuclear Information System (INIS)

    Takehisa, Kiwamu; Takemori, Satoshi

    1995-01-01

    Simulations of a copper laser pumped dye laser amplifier and new designs of the longitudinally pumped dye laser amplifier are presented. The simulations take the consideration of the amplified spontaneous emission (ASE). The new designs utilize a center-hole reflector instead of a dichroic mirror. The simulation results indicate that the poor spatial overlap between the pump beam and the dye beam in the transverse pumping not only reduces the laser output power, but also generates ASE strongly. The results also indicate that the longitudinal pumping is as efficient as the transverse pumping. (author)

  6. Vacuum pumping for controlled thermonuclear reactors

    International Nuclear Information System (INIS)

    Watson, J.S.; Fisher, P.W.

    1976-01-01

    Thermonuclear reactors impose unique vacuum pumping problems involving very high pumping speeds, handling of hazardous materials (tritium), extreme cleanliness requirements, and quantitative recovery of pumped materials. Two principal pumping systems are required for a fusion reactor, a main vacuum system for evacuating the torus and a vacuum system for removing unaccelerated deuterium from neutral beam injectors. The first system must pump hydrogen isotopes and helium while the neutral beam system can operate by pumping only hydrogen isotopes (perhaps only deuterium). The most promising pumping techniques for both systems appear to be cryopumps, but different cryopumping techniques can be considered for each system. The main vacuum system will have to include cryosorption pumps cooled to 4.2 0 K to pump helium, but the unburned deuterium-tritium and other impurities could be pumped with cryocondensation panels (4.2 0 K) or cryosorption panels at higher temperatures. Since pumping speeds will be limited by conductance through the ducts and thermal shields, the pumping performance for both systems will be similar, and other factors such as refrigeration costs are likely to determine the choice. The vacuum pumping system for neutral beam injectors probably will not need to pump helium, and either condensation or higher temperature sorption pumps can be used

  7. Below-bandgap photoreflection spectroscopy of semiconductor laser structures

    International Nuclear Information System (INIS)

    Sotnikov, Aleksandr E; Chernikov, Maksim A; Ryabushkin, Oleg A; Trubenko, P; Moshegov, N; Ovchinnikov, A

    2004-01-01

    A new method of modulated light reflection - below-bandgap photoreflection, is considered. Unlike the conventional photoreflection method, the proposed method uses optical pumping by photons of energy smaller than the bandgap of any layer of a semiconductor structure under study. Such pumping allows one to obtain the modulated reflection spectrum for all layers of the structure without excitation of photoluminescence. This method is especially promising for the study of wide-gap semiconductors. The results of the study of semiconductor structures used in modern high-power multimode semiconductor lasers are presented. (laser applications and other topics in quantum electronics)

  8. Centrifugal pumps

    CERN Document Server

    Anderson, HH

    1981-01-01

    Centrifugal Pumps describes the whole range of the centrifugal pump (mixed flow and axial flow pumps are dealt with more briefly), with emphasis on the development of the boiler feed pump. Organized into 46 chapters, this book discusses the general hydrodynamic principles, performance, dimensions, type number, flow, and efficiency of centrifugal pumps. This text also explains the pumps performance; entry conditions and cavitation; speed and dimensions for a given duty; and losses. Some chapters further describe centrifugal pump mechanical design, installation, monitoring, and maintenance. The

  9. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  10. Fusion reactor pumped laser

    International Nuclear Information System (INIS)

    Jassby, D.L.

    1988-01-01

    A nuclear pumped laser is described comprising: a toroidal fusion reactor, the reactor generating energetic neutrons; an annular gas cell disposed around the outer periphery of the reactor, the cell including an annular reflecting mirror disposed at the bottom of the cell and an annular output window disposed at the top of the cell; a gas lasing medium disposed within the annular cell for generating output laser radiation; neutron reflector material means disposed around the annular cell for reflecting neutrons incident thereon back into the gas cell; neutron moderator material means disposed between the reactor and the gas cell and between the gas cell and the neutron reflector material for moderating the energy of energetic neutrons from the reactor; converting means for converting energy from the moderated neutrons to energy pumping means for pumping the gas lasing medium; and beam compactor means for receiving output laser radiation from the annular output window and generating a single output laser beam therefrom

  11. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  12. Resonant Tunneling Spin Pump

    Science.gov (United States)

    Ting, David Z.

    2007-01-01

    The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

  13. Experimental study on the characteristics of semiconductor opening switch

    CERN Document Server

    Su Jian Cang; Ding Yong Zhong; Song Zhi Min; Ding Zhen Jie; Liu Guo Zhi

    2002-01-01

    An experimental set-up is developed to measure the characteristics of semiconductor opening switch (SOS). The parameters, such as interruption impedance, current int eruption time, voltage gain, pulse duration and energy transfer efficiency, are studied experimentally. The experimental results show that forward pumping time and reverse pumping time are important parameters for semiconductor opening switches. The influences of forward pumping time and reverse pumping time on interruption time, voltage gain, and energy transfer efficiency are obtained. In the interruption process, the impedance variation is divided into three phases: that is rapid increasing phase, slow change phase and completely interruption phase

  14. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  15. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  16. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  17. 80-W cw TEM{sub 00} IR beam generation by use of a laser-diode-side-pumped Nd:YAG rod laser

    Energy Technology Data Exchange (ETDEWEB)

    Konno, Susumu; Fujikawa, Shuichi; Yasui, Koji [Mitsubishi Electric Corp. Amagasaki, Hyogo (Japan). Advanced Technology R and D Center

    1998-03-01

    We have demonstrated high-efficient and high-power operation of a diode-side-pumped Nd:YAG rod laser. The laser has a simple and scalable configuration consisting of a diffusive pumping reflector and an advanced cavity configuration for polarization-dependent bifocusing compensation. (author)

  18. Treatment of tattoos with a 755-nm Q-switched alexandrite laser and novel 1064 nm and 532 nm Nd:YAG laser handpieces pumped by the alexandrite treatment beam.

    Science.gov (United States)

    Bernstein, Eric F; Bhawalkar, Jay; Clifford, Joan; Hsia, James

    2010-11-01

    Multi-colored and even black tattoos often require more than one wavelength to remove the target pigment. The authors report here a novel alexandrite laser with two Nd:YAG laser handpieces pumped by the alexandrite treatment beam enabling the delivery of three wavelengths from a single device. To describe and evaluate the effectiveness of a novel Q-switched laser-pumped laser for treating tattoos. Twenty tattoos in 14 subjects were treated at four-week intervals using a combination of available wavelengths (532, 755 and 1064 nm) as determined by the treating physician. Digital cross-polarized photographs were taken before treatment and two months following the fourth and final treatment. Photographs were evaluated by three physician observers blinded as to the treatment condition and rated for clearance by the following scale: 1 = > 95 percent, 2 = 76-95 percent, 3 = 51-75 percent, 4 = 26-50 percent and 5 = 0-25 percent clearance. The average clearance score was 3.1, in the 51-75 percent range, two months following four treatments. No scarring, hyper- or hypopigmentation was noted on post-treatment photographs or by the treating physician. The alexandrite and alexandrite-pumped 532 nm and 1064 nm Q-switched lasers are effective for removing decorative tattoos, and represents the first commercial laser with laser-pumped, laser handpieces.

  19. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  20. Heat pumps

    CERN Document Server

    Macmichael, DBA

    1988-01-01

    A fully revised and extended account of the design, manufacture and use of heat pumps in both industrial and domestic applications. Topics covered include a detailed description of the various heat pump cycles, the components of a heat pump system - drive, compressor, heat exchangers etc., and the more practical considerations to be taken into account in their selection.

  1. The charge state distribution of a carbon beam measured at the Lund pelletron accelerator with the newly installed terminal pumping system in use

    CERN Document Server

    Kiisk, M; Faarinen, M P; Hellborg, R; Haakansson, K; Persson, P; Skog, G; Stenström, K

    2002-01-01

    Charge state distributions for sup 1 sup 2 C and sup 1 sup 3 C ions have been measured at the Lund Pelletron tandem accelerator for the N sub 2 gas stripper with a newly installed terminal pumping system in use. A comparison of the results obtained for the ion energies between 1.5 and 2.8 MeV with the foil stripper and the gas stripper without terminal pumping demonstrates the great improvement of the stripping process achieved with the new terminal pumping.

  2. The pursuit of electrically-driven organic semiconductor lasers

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Takenobu, Taishi; Iwasa, Yoshihiro

    2014-01-01

    Organic semiconductors have many favourable and plastic-like optical properties that are promising for the development of low energy consuming laser devices. Although optically-pumped organic semiconductor lasers have been demonstrated since the early days of lasers, electrically-driven organic

  3. Heat pumps

    CERN Document Server

    Brodowicz, Kazimierz; Wyszynski, M L; Wyszynski

    2013-01-01

    Heat pumps and related technology are in widespread use in industrial processes and installations. This book presents a unified, comprehensive and systematic treatment of the design and operation of both compression and sorption heat pumps. Heat pump thermodynamics, the choice of working fluid and the characteristics of low temperature heat sources and their application to heat pumps are covered in detail.Economic aspects are discussed and the extensive use of the exergy concept in evaluating performance of heat pumps is a unique feature of the book. The thermodynamic and chemical properties o

  4. Technology of substrates for molecular beam homo epitaxy of wide - gap AII-BVI semiconductors and construction of a simplified setup for this process

    International Nuclear Information System (INIS)

    Mycielski, A.; Szadkowski, A.; Kaliszek, W.

    2000-01-01

    The technology of 'epi-ready' substrate plates (for MBE) of the wide gap AII-BVI semiconductor compounds, i. e. - preparation of the ultra pure elements, synthesis of the source material, crystallization by the physical vapour transport technique, cutting of the oriented plates, mechano-chemical polishing and preparation of the 'epi-ready' surface - is described, as well as the construction of a simplified version of the MBE setup for covering the substrate plates with the homoepitaxial layer. The results of the characterization of the substrate crystals and plates are presented. (author)

  5. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  6. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  7. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  8. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  9. Spontaneous generation of vortex and coherent vector beams from a thin-slice c-cut Nd:GdVO4 laser with wide-aperture laser-diode end pumping: application to highly sensitive rotational and translational Doppler velocimetry

    Science.gov (United States)

    Otsuka, Kenju; Chu, Shu-Chun

    2017-07-01

    Selective excitation of Laguerre-Gauss modes (optical vortices: helical LG0,2 and LG0,1), reflecting their weak transverse cross-saturation of population inversions against a preceding higher-order Ince-Gauss (IG0,2) or Hermite-Gauss (HG2,1) mode, was observed in a thin-slice c-cut Nd:GdVO4 laser with wide-aperture laser-diode end pumping. Single-frequency coherent vector beams were generated through the transverse mode locking of a pair of orthogonally polarized IG2,0 and LG0,2 or HG2,1 and LG0,1 modes. Highly sensitive self-mixing rotational and translational Doppler velocimetry is demonstrated by using vortex and coherent vector beams.

  10. Semiconductor laser technology for remote sensing experiments

    Science.gov (United States)

    Katz, Joseph

    1988-01-01

    Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

  11. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  12. High efficiency and good beam quality of electro-optic, cavity-dumped and double-end pumped Nd:YLF laser

    Science.gov (United States)

    Tang, X. X.; Fan, Z. W.; Qiu, J. S.; Lian, F. Q.; Zhang, X. L.

    2012-06-01

    In this paper, we describe a Nd:YLF laser based on high-speed RTP electro-optical cavity dumping technique. Two home-made 150 W fiber pump modules are used from both sides to pump Nd:YLF crystal. Coupling systems are the key elements in end-pumped solid-state lasers, the aberrations of which greatly affect the efficiency of the lasers. In order to get high efficient and good quality laser output, the optical software ZEMAX is used to design a four-piece coupling system. When the pumped energy is 32 mJ at the repetition rate of 1 Hz, the output energy is 6.5 mJ with 2.5 ns pulse width. When the pumped energy is 13.1 W at the repetition rate of 200 Hz, the output energy is 2.2 W with small M 2 factor where M {/x 2} is 1.04, and M {/y 2} is 1.05, and the light-light conversion efficiency is up to 16.8%.

  13. Centrifugal pumps

    CERN Document Server

    Gülich, Johann Friedrich

    2014-01-01

    This book gives an unparalleled, up-to-date, in-depth treatment of all kinds of flow phenomena encountered in centrifugal pumps including the complex interactions of fluid flow with vibrations and wear of materials. The scope includes all aspects of hydraulic design, 3D-flow phenomena and partload operation, cavitation, numerical flow calculations, hydraulic forces, pressure pulsations, noise, pump vibrations (notably bearing housing vibration diagnostics and remedies), pipe vibrations, pump characteristics and pump operation, design of intake structures, the effects of highly viscous flows, pumping of gas-liquid mixtures, hydraulic transport of solids, fatigue damage to impellers or diffusers, material selection under the aspects of fatigue, corrosion, erosion-corrosion or hydro-abrasive wear, pump selection, and hydraulic quality criteria. As a novelty, the 3rd ed. brings a fully analytical design method for radial impellers, which eliminates the arbitrary choices inherent to former design procedures. The d...

  14. Pumping life

    DEFF Research Database (Denmark)

    Sitsel, Oleg; Dach, Ingrid; Hoffmann, Robert Daniel

    2012-01-01

    The name PUMPKIN may suggest a research centre focused on American Halloween traditions or the investigation of the growth of vegetables – however this would be misleading. Researchers at PUMPKIN, short for Centre for Membrane Pumps in Cells and Disease, are in fact interested in a large family o......’. Here we illustrate that the pumping of ions means nothing less than the pumping of life....

  15. Large-area high-power VCSEL pump arrays optimized for high-energy lasers

    Science.gov (United States)

    Wang, Chad; Geske, Jonathan; Garrett, Henry; Cardellino, Terri; Talantov, Fedor; Berdin, Glen; Millenheft, David; Renner, Daniel; Klemer, Daniel

    2012-06-01

    Practical, large-area, high-power diode pumps for one micron (Nd, Yb) as well as eye-safer wavelengths (Er, Tm, Ho) are critical to the success of any high energy diode pumped solid state laser. Diode efficiency, brightness, availability and cost will determine how realizable a fielded high energy diode pumped solid state laser will be. 2-D Vertical-Cavity Surface-Emitting Laser (VCSEL) arrays are uniquely positioned to meet these requirements because of their unique properties, such as low divergence circular output beams, reduced wavelength drift with temperature, scalability to large 2-D arrays through low-cost and high-volume semiconductor photolithographic processes, high reliability, no catastrophic optical damage failure, and radiation and vacuum operation tolerance. Data will be presented on the status of FLIR-EOC's VCSEL pump arrays. Analysis of the key aspects of electrical, thermal and mechanical design that are critical to the design of a VCSEL pump array to achieve high power efficient array performance will be presented.

  16. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  17. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  18. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  19. Semiconductor plasmonic crystals: active control of THz extinction

    International Nuclear Information System (INIS)

    Schaafsma, M C; Rivas, J Gómez

    2013-01-01

    We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)

  20. Electrically Pumped Vertical-Cavity Amplifiers

    DEFF Research Database (Denmark)

    Greibe, Tine

    2007-01-01

    In this work, the design of electrically pumped vertical cavity semiconductor optical amplifiers (eVCAs) for use in a mode-locked external-cavity laser has been developed, investigated and analysed. Four different eVCAs, one top-emitting and three bottom emitting structures, have been designed...... and discussed. The thesis concludes with recommendations for further work towards the realisation of compact electrically pumped mode-locked vertical externalcavity surface emitting lasers....

  1. High power semiconductor switches in the 12 kV, 50 kA pulse generator of the SPS beam dump kicker system

    CERN Document Server

    Bonthond, J; Faure, P; Vossenberg, Eugène B

    2001-01-01

    Horizontal deflection of the beam in the dump kicker system of the CERN SPS accelerator is obtained with a series of fast pulsed magnets. The high current pulses of 50 kA per magnet are generated with capacitor discharge type generators which, combined with a resistive free-wheel diode circuit, deliver a critically damped half-sine current with a rise-time of 25 ms. Each generator consists of two 25 kA units, connected in parallel to a magnet via a low inductance transmission line.

  2. Generation of nanosecond laser pulses at a 2.2-MHz repetition rate by a cw diode-pumped passively Q-switched Nd3+:YVO4 laser

    International Nuclear Information System (INIS)

    Nghia, Nguyen T; Hao, Nguyen V; Orlovich, Valentin A; Hung, Nguyen D

    2011-01-01

    We report a new configuration of a high-repetition rate nanosecond laser based on a semiconductor saturable absorber mirror (SESAM). The SESAM is conventional technical solution for passive mode-locking at 1064 nm and simultaneously used as a highly reflecting mirror and a saturable absorber in a high-Q and short cavity of a cw diode-end-pumped a-cut Nd 3+ :YVO 4 laser. Two laser beams are coupled out from the cavity using an intracavity low-reflection thin splitter. The laser characteristics are investigated as functions of pump and resonator parameters. Using a 1.8-W cw pump laser diode at 808 nm, the passively Q-switched SESAMbased laser generates 22-ns pulses with an average power of 275 mW at a pulse repetition rate of 2250 kHz.

  3. On the possibility of gamma-laser pumping occurring at a charged particle counter motion and in density-modulated electron beams by a high frequency intensive radiation

    International Nuclear Information System (INIS)

    Maksyuta, N.V.

    1999-01-01

    The given report deals with the problem of motion and radiation of relativistic electron in a field of opposite plane density-modulated relativistic electron beam. Physical essence of high-frequency intensive radiation origin could be explained, first by the additional Lorentz reduction of the electron beam modulation period (modulation period Λ in a laboratory co-ordinate system reduces by a factor γ as compared with the modulation period in a beam co-ordinate system) and, secondly, a simultaneous γ-fold increase of transverse components of relativistic electrons of the beam electric and magnetic fields. Such a moving modulated electron beam can be regarded as a dynamic micro-ondulator. Unlike static micro-ondulators we can observe here one more positive moment along with a small period Λ = Λ'/γ, i.e. the electric and magnetic fields in a transverse direction are changed according to the law of exp(-2πx/Λ'). It means that charged particle interaction with a dynamic micro-ondulator will be effective in a wide range of transverse distances, i.e., to get an intensive short wave radiation one can use charged particle beams with rather large apertures which leads to an additional radiation intensity increase. A discussion is given showing that the proposed dynamic modulator possesses some essential merits. A detailed calculation is presented. (author)

  4. Solid-state NMR of inorganic semiconductors.

    Science.gov (United States)

    Yesinowski, James P

    2012-01-01

    Studies of inorganic semiconductors by solid-state NMR vary widely in terms of the nature of the samples investigated, the techniques employed to observe the NMR signal, and the types of information obtained. Compared with the NMR of diamagnetic non-semiconducting substances, important differences often result from the presence of electron or hole carriers that are the hallmark of semiconductors, and whose theoretical interpretation can be involved. This review aims to provide a broad perspective on the topic for the non-expert by providing: (1) a basic introduction to semiconductor physical concepts relevant to NMR, including common crystal structures and the various methods of making samples; (2) discussions of the NMR spin Hamiltonian, details of some of the NMR techniques and strategies used to make measurements and theoretically predict NMR parameters, and examples of how each of the terms in the Hamiltonian has provided useful information in bulk semiconductors; (3) a discussion of the additional considerations needed to interpret the NMR of nanoscale semiconductors, with selected examples. The area of semiconductor NMR is being revitalized by this interest in nanoscale semiconductors, the great improvements in NMR detection sensitivity and resolution that have occurred, and the current interest in optical pumping and spintronics-related studies. Promising directions for future research will be noted throughout.

  5. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  6. Cryogenic semiconductor high-intensity radiation monitors

    International Nuclear Information System (INIS)

    Palmieri, V.G.; Bell, W.H.; Borer, K.; Casagrande, L.; Da Via, C.; Devine, S.R.H.; Dezillie, B.; Esposito, A.; Granata, V.; Hauler, F.; Jungermann, L.; Li, Z.; Lourenco, C.; Niinikoski, T.O.; Shea, V. O'; Ruggiero, G.; Sonderegger, P.

    2003-01-01

    This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux

  7. Some aspects of ion implantation in semiconductors

    International Nuclear Information System (INIS)

    Klose, H.

    1982-01-01

    The advantages and disadvantages of ion implantation in the application of semiconductor technology are reviewed in short. This article describes some aspects of the state of the art and current developments of nonconventional annealing procedures, ion beam gettering of deep impurities, special applications of ion implantation using low or high energy ions and GaAs-electronics, respectively. Radiation defects in Si and the nonexponential emission and capture processes in GaAsP are discussed. Final future trends of ion beam methods in semiconductor production technology are summarized. (author)

  8. Liquid metals pumping

    International Nuclear Information System (INIS)

    Le Frere, J.P.

    1984-01-01

    Pumps used to pump liquid metals depend on the liquid metal and on the type of application concerned. One deals more particularly with electromagnetic pumps, the main pumps used with mechanical pumps. To pump sodium in the nuclear field, these two types of pumps are used; the pumps of different circuits of Super Phenix are presented and described [fr

  9. Assessment of radiation exposure in dental cone-beam computerized tomography with the use of metal-oxide semiconductor field-effect transistor (MOSFET) dosimeters and Monte Carlo simulations.

    Science.gov (United States)

    Koivisto, J; Kiljunen, T; Tapiovaara, M; Wolff, J; Kortesniemi, M

    2012-09-01

    The aims of this study were to assess the organ and effective dose (International Commission on Radiological Protection (ICRP) 103) resulting from dental cone-beam computerized tomography (CBCT) imaging using a novel metal-oxide semiconductor field-effect transistor (MOSFET) dosimeter device, and to assess the reliability of the MOSFET measurements by comparing the results with Monte Carlo PCXMC simulations. Organ dose measurements were performed using 20 MOSFET dosimeters that were embedded in the 8 most radiosensitive organs in the maxillofacial and neck area. The dose-area product (DAP) values attained from CBCT scans were used for PCXMC simulations. The acquired MOSFET doses were then compared with the Monte Carlo simulations. The effective dose measurements using MOSFET dosimeters yielded, using 0.5-cm steps, a value of 153 μSv and the PCXMC simulations resulted in a value of 136 μSv. The MOSFET dosimeters placed in a head phantom gave results similar to Monte Carlo simulations. Minor vertical changes in the positioning of the phantom had a substantial affect on the overall effective dose. Therefore, the MOSFET dosimeters constitute a feasible method for dose assessment of CBCT units in the maxillofacial region. Copyright © 2012 Elsevier Inc. All rights reserved.

  10. Electromagnetic pump

    International Nuclear Information System (INIS)

    Ito, Koji; Suetake, Norio; Aizawa, Toshie; Nakasaki, Masayoshi

    1998-01-01

    The present invention provides an electromagnetic pump suitable to a recycling pump for liquid sodium as coolants of an FBR type reactor. Namely, a stator module of the electromagnetic pump of the present invention comprises a plurality of outer laminate iron core units and outer stator modules stacked alternately in the axial direction. With such a constitution, even a long electromagnetic pump having a large number of outer stator coils can be manufactured without damaging electric insulation of the outer stator coils. In addition, the inner circumferential surface of the outer laminate iron cores is urged and brought into contact with the outer circumferential surface of the outer duct by an elastic material. With such a constitution, Joule loss heat generated in the outer stator coils and internal heat generated in the outer laminate iron cores can be released to an electroconductive fluid flowing the inner circumference of the outer duct by way of the outer duct. (I.S.)

  11. Electrokinetic pump

    Science.gov (United States)

    Patel, Kamlesh D.

    2007-11-20

    A method for altering the surface properties of a particle bed. In application, the method pertains particularly to an electrokinetic pump configuration where nanoparticles are bonded to the surface of the stationary phase to alter the surface properties of the stationary phase including the surface area and/or the zeta potential and thus improve the efficiency and operating range of these pumps. By functionalizing the nanoparticles to change the zeta potential the electrokinetic pump is rendered capable of operating with working fluids having pH values that can range from 2-10 generally and acidic working fluids in particular. For applications in which the pump is intended to handle highly acidic solutions latex nanoparticles that are quaternary amine functionalized can be used.

  12. Compact electron accelerator for pumping gas lasers

    International Nuclear Information System (INIS)

    Duncan, C.V.; Bradley, L.P.

    1976-01-01

    A description is given of the design and application of a simple e-beam generator for the repetitive pulse pumping of gas lasers. The circuit uses a low inductance Marx and series tuned pulse forming elements

  13. Diode laser in-band pumped, efficient 1645 nm continuous-wave and Q-switched Er:YLuAG lasers with near-diffraction-limited beam quality

    International Nuclear Information System (INIS)

    Li, Jing; Yang, SuHui; He, Tao

    2014-01-01

    Fiber-like Er:YLuAG laser rods were tested for continuous-wave (CW) and Q-switched operation. Two narrow-band laser diodes emitting at 1532 nm were used as pump sources. The pump power was confined in the laser rods via total internal reflection. In CW mode, a maximum output power of 7.2 W was measured from a 30 mm long Er:YLuAG laser rod, corresponding to an optical–optical efficiency of 26% and a slope efficiency of 78%. Er:YLuAG and Er:YAG lasers were compared experimentally and exhibited comparable performance, while the measured central wavelength of the Er:YLuAG laser was 1644.75 nm, slightly longer than the central wavelength of the Er:YAG laser in the same experimental circumstances. In Q-switched mode, an output energy of 3.5 mJ was obtained from a 25 mm Er:YLuAG laser rod with a pulse duration of 100 ns and a pulse repetition frequency of 100 Hz. The pulsed output had near-diffraction-limited beam quality with M 2 values of 1.13 and 1.11 in the x and y directions, respectively. (letter)

  14. Nonlinear interactions in magnetised piezoelectric semiconductor plasmas

    International Nuclear Information System (INIS)

    Sharma, Giriraj; Ghosh, S.

    2000-01-01

    Based on hydrodynamics model of plasmas an analytical investigation of frequency modulational interaction between copropagating high frequency pump and acoustic mode and consequent amplification (steady-state and transient) of the modulated waves is carried out in a magnetised piezoelectric semiconductor medium. The phenomenon of modulation amplification is treated as four wave interaction process involving cubic nonlinearity of the medium. Gain constants, threshold-pump intensities and optimum-pulse duration for the onset of modulational instabilities are estimated. The analysis has been performed in non-dispersive regime of the acoustic mode, which is one of the preconditions for achieving an appreciable initial steady-state growth of the modulated signal wave. It is found that the transient gain diminishes very rapidly if one chooses the pump pulse duration beyond the maximum gain point. Moreover, the desired value of the gain can be obtained by adjusting intensity and pulse duration of the pump and doping concentration of the medium concerned. (author)

  15. Feasibility of solar-pumped dye lasers

    Science.gov (United States)

    Lee, Ja H.; Kim, Kyung C.; Kim, Kyong H.

    1987-01-01

    Dye laser gains were measured at various pump-beam irradiances on a dye cell in order to evaluate the feasibility of solar pumping. Rhodamine 6G dye was considered as a candidate for the solar-pumped laser because of its high utilization of the solar spectrum and high quantum efficiency. Measurements show that a solar concentration of 20,000 is required to reach the threshold of the dye.

  16. Particle beam accelerator

    International Nuclear Information System (INIS)

    Turner, N.L.

    1982-01-01

    A particle beam accelerator is described which has several electrodes that are selectively short circuited together synchronously with changes in the magnitude of a DC voltage applied to the accelerator. By this method a substantially constant voltage gradient is maintained along the length of the unshortened electrodes despite variations in the energy applied to the beam by the accelerator. The invention has particular application to accelerating ion beams that are implanted into semiconductor wafers. (U.K.)

  17. Pumps and pump facilities. 2. ed.

    International Nuclear Information System (INIS)

    Bohl, W.; Bauerfeind, H.; Gutmann, G.; Leuschner, G.; Matthias, H.B.; Mengele, R.; Neumaier, R.; Vetter, G.; Wagner, W.

    1981-01-01

    This book deals with the common fundamental aspects of liquid pumps and gives an exemplary choice of the most important kinds of pumps. The scientific matter is dealt with by means of practical mathematical examples among other ways of presenting the matter. Survey of contents: Division on main operational data of pumps - pipe characteristics - pump characteristics - suction behaviour of the pumps - projecting and operation of rotary pumps - boiler feed pumps - reactor feed pumps - oscillating positive-displacement pumps - eccentric spiral pumps. (orig./GL) [de

  18. Beat-wave generation of plasmons in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1995-08-01

    It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductor (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas. (author). 7 refs

  19. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  20. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  1. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  2. Investigation into self-pumped and mutually pumped phase conjugation with beams entering the negative c face of doped (K0.5Na0.5)0.2(Sr0.75 Ba0.25)0.9Nb2O6 crystals

    International Nuclear Information System (INIS)

    Zhang, J.; Liu, H.; Jia, W.

    1997-01-01

    We investigated some novel geometries of self-pumped phase conjugation (SPPC) and mutually pumped phase conjugation (MPPC), relying on total internal reflection both from the a face and from corners, with beams entering the negative c face of doped (K 0.5 Na 0.5 ) 0.2 (Sr 0.75 Ba 0.25 ) 0.9 Nb 2 O 6 crystals. The different situations for internal light paths and their direct transformation at the same incident wavelength were observed. Similarities and differences between SPPC and MPPC are discussed. The dynamic features of SPPC and MPPC in different situations were also observed. Three or more four-wave-mixing interaction regions were clearly observed inside the phase conjugators. The multistep interaction and its influence on the response rate and conjugation fidelity are analyzed. The large size of the samples seems necessary to ensure an optical path that is long enough for multistep bifurcation. The stability of the light channels is discussed based on the fanning effect. copyright 1997 Optical Society of America

  3. Towards Electrically Pumped Nanolasers for Terabit Communication

    DEFF Research Database (Denmark)

    Lupi, Alexandra

    This thesis deals with modeling, design, fabrication and characterization of vertically electrically pumped photonic crystal light-emitting devices. For this purpose a new material platform of III-V semiconductors on silicon has been developed. The devices fabricated on this platform can be used...... as optical interconnects, where compatibility with Complementary Metal Oxide Semiconductor (CMOS) technology is required. The first part of this work is dedicated to modeling and simulations of electrically pumped photonic crystal nanolasers with diverse material configurations and different concepts...... for electrical injection. The analysis of the models is conducted with focus on laser performances, energy efficiency, and thermal properties. The second part of this thesis deals with design, fabrication and characterization of vertically electrically pumped photonic crystal light-emitting devices. The devices...

  4. Polariton solitons and nonlinear localized states in a one-dimensional semiconductor microcavity

    Science.gov (United States)

    Chen, Ting-Wei; Cheng, Szu-Cheng

    2018-01-01

    This paper presents numerical studies of cavity polariton solitons (CPSs) in a resonantly pumped semiconductor microcavity with an imbedded spatial defect. In the bistable regime of the well-known homogeneous polariton condensate, with proper incident wave vector and pump strength, bright and/or dark cavity solitons can be found in the presence of a spatially confined potential. The minimum pump strength required to observe the CPSs or nonlinear localized states in this parametric pump scheme is therefore reported.

  5. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  6. Fluidic pumps

    International Nuclear Information System (INIS)

    Priestman, G.H.

    1990-01-01

    A fluidic pump has primary and secondary vessels connected by a pipe, a displacement vessel having liquid to be delivered through a pipe via a rectifier provided with a feed tank. A drive unit delivers pressure fluid to a line to raise liquid and compress trapped gas or liquid in the space, including the pipe between the liquids in the two vessels and thus drive liquid out of the displacement vessel. The driving gas is therefore separated by the barrier liquid and the trapped gas or liquid from the liquid to be pumped which liquid could be e.g. radioactive. (author)

  7. Pumped storage

    International Nuclear Information System (INIS)

    Strauss, P.L.

    1991-01-01

    The privately financed 1,000 MW Rocky Point Pumped Storage Project located in central Colorado, USA, will be one of the world's highest head, 2,350 feet reversible pump/turbine projects. The project will offer an economical supply of peaking power and spinning reserve power to Colorado and other southwestern states. This paper describes how the project will be made compatible with the environmental conditions in the project area and the type of terrestrial mitigation measures that are being proposed for those situations where the project impacts the environment, either temporarily or permanently

  8. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    Science.gov (United States)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  9. New concepts for drift pumping a thermal barrier with rf

    International Nuclear Information System (INIS)

    Barter, J.D.; Baldwin, D.; Chen, Y.; Poulsen, P.

    1985-01-01

    Pump neutral beams, which are directed into the loss cone of the TMX-U plugs, are normally used to pump ions from the thermal barriers. Because these neutral beams introduce cold gas that reduces pumping efficiency, and require a straight line entrance and exit from the plug, alternate methods are being investigated to provide barrier pumping. To maintain the thermal barrier, either of two classes of particles can be pumped. First, the collisionally trapped ions can be pumped directly. In this case, the most promising selection criterion is the azimuthal drift frequency. Second, the excess sloshing-ion density can be removed, allowing the use of increased sloshing-beam density to pump the trapped ions. The selection mechanism in this case is the Doppler-shifted ion-cyclotron resonance of the high-energy sloshing-ions (3 keV less than or equal to U/sub parallel/ less than or equal to 10 keV)

  10. Diode-laser-pump module with integrated signal ports for pumping amplifying fibers and method

    Science.gov (United States)

    Savage-Leuchs,; Matthias, P [Woodinville, WA

    2009-05-26

    Apparatus and method for collimating pump light of a first wavelength from laser diode(s) into a collimated beam within an enclosure having first and second optical ports, directing pump light from the collimated beam to the first port; and directing signal light inside the enclosure between the first and second port. The signal and pump wavelengths are different. The enclosure provides a pump block having a first port that emits pump light to a gain fiber outside the enclosure and that also passes signal light either into or out of the enclosure, and another port that passes signal light either out of or into the enclosure. Some embodiments use a dichroic mirror to direct pump light to the first port and direct signal light between the first and second ports. Some embodiments include a wavelength-conversion device to change the wavelength of at least some of the signal light.

  11. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  12. Development of the power control system for semiconductor lasers

    International Nuclear Information System (INIS)

    Kim, Kwang Suk; Kim, Cheol Jung

    1997-12-01

    For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs

  13. Effects of ion sputtering on semiconductor surfaces

    International Nuclear Information System (INIS)

    McGuire, G.E.

    1978-01-01

    Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

  14. An optimized design of rectangle pumping cell for nuclear reactor pumped laser

    International Nuclear Information System (INIS)

    Wan, J.-S.; Chen, L.-X.; Zhao, Z.-M.; Pan, X.-B.; Jing, C.-Y.; Zhao, X.-Q.; Liu, F.-H.

    2003-01-01

    Basing on our research of energy deposition in RPL (Reactor Pumped Laser) pumping cell and the laser power efficiency, a RPL test device on Pulsed Reactor has been designed. In addition, the laser beam power of the RPL test device is estimated in the paper. (author)

  15. Repetitive 1 Hz fast-heating fusion driver HAMA pumped by diode pumped solid state laser

    International Nuclear Information System (INIS)

    Mori, Yoshitaka; Sekine, Takashi; Komeda, Osamu

    2014-01-01

    We describe a repetitive fast-heating fusion driver called HAMA pumped by Diode Pumped Solid State Laser (DPSSL) to realize the counter irradiation of sequential implosion and heating laser beams. HAMA was designed to activate DPSSL for inertial confinement fusion (ICF) research and to realize a unified ICF machine for power plants. The details of a four-beam alignment scheme and the results of the counter irradiation of stainless plates are shown. (author)

  16. Semiconductor analysis with a channeled helium microbeam

    International Nuclear Information System (INIS)

    Ingarfield, S.A.; McKenzie, C.D.; Short, K.T.; Williams, J.S.

    1981-01-01

    This paper describes the use of a channeled helium microbeam for analysis of damage and dopant distributions in semiconductors. Practical difficulties and potential problems associated with the channeling of microbeams in semiconductors have been examined. In particular, the following factors have been characterised: i) the effect of both convergence of focused beam and beam scanning on the quality of channeling; ii) damage produced by the probe ions; and iii) local beam heating effects arising from high current densities. Acceptable channeling has been obtained (minimum yield approaching 4%) under a variety of focusing and scanning conditions which are suitable for analysis of device structures. The capabilities of the technique are demonstrated by monitoring variations in local damage and impurity depth distributions across a narrow (<2mm) region of an ion implanted silicon wafer

  17. Solar Pump

    Science.gov (United States)

    Pique, Charles

    1987-01-01

    Proposed pump moves liquid by action of bubbles formed by heat of sun. Tube of liquid having boiling point of 100 to 200 degrees F placed at focal axis of cylindrical reflector. Concentrated sunlight boils liquid at focus, and bubbles of vapor rise in tube, carrying liquid along with them. Pressure difference in hot tube sufficient to produce flow in large loop. Used with conventional flat solar heating panel in completely solar-powered heat-storage system.

  18. High-performance semiconductor optical preamplifier receiver at 10 Gb/s

    DEFF Research Database (Denmark)

    Mikkelsen, Benny; Jørgensen, Carsten Gudmann; Jensen, N.

    1993-01-01

    A semiconductor optical preamplifier receiver for bitrates of 10 Gb/s is described. The measured sensitivity is -28 dBm, with a polarization sensitivity of less than 0.5 dB. Using the same transmitter and receiver configuration but with a 980-nm pumped fiber amplifier instead of the semiconductor...... amplifier, the sensitivity is -34 dBm...

  19. Beam-Beam Effects

    International Nuclear Information System (INIS)

    Herr, W; Pieloni, T

    2014-01-01

    One of the most severe limitations in high-intensity particle colliders is the beam-beam interaction, i.e. the perturbation of the beams as they cross the opposing beams. This introduction to beam-beam effects concentrates on a description of the phenomena that are present in modern colliding beam facilities

  20. α-particle shielding of semiconductor device

    International Nuclear Information System (INIS)

    McKeown, P.J.A.; Perry, J.P.; Waddell, J.M.; Barker, K.D.

    1981-01-01

    Soft errors in semiconductor devices, e.g. random access memories, arising from the bombardment of the device by alpha particles produced by the disintegration of minute traces of uranium or thorium in the packaging materials are prevented by coating the active surface of the semiconductor chip with a thin layer, e.g. 20 to 100 microns of an organic polymeric material, this layer being of sufficient thickness to absorb the particles. Typically, the polymer is a poly-imide formed by u.v. electron-beam or thermal curing of liquid monomer applied to the chip surface. (author)

  1. A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

    Science.gov (United States)

    Böhringer, Klaus; Hess, Ortwin

    The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present

  2. An Electron-Beam Controlled Semiconductor Switch

    Science.gov (United States)

    1989-11-01

    of the Seventeenth Power Modulator Symposium, Seattle, WA, pp. 214-218. 1986. 21. Bovino , L., ’ioumans,R., Weiner, H., Burke, T . , "Optica lly... Bovino , R. Youmans, M. Weiner, and T. Burke, ’ ’Optically Co ntrolled Semiconducto r Switch for ~lulti-~legawatt Rep-Rated Pulse r s ," Conf. Record...p. 615. (II 1 W. N. Carr, IEEE Trans. Electron Devices, vol. ED-12, p. 531 , 1965. (121 T. Burke, M. Weiner. L. Bovino , and R. Youmans, in Proc

  3. Flaw preparations for HSST program vessel fracture mechanics testing: mechanical-cyclic pumping and electron-beam weld-hydrogen-charge cracking schemes

    International Nuclear Information System (INIS)

    Holz, P.P.

    1980-06-01

    The purpose of the document is to present schemes for flaw preparations in heavy section steel. The ability of investigators to grow representative sharp cracks of known size, location, and orientation is basic to representative field testing to determine data for potential flaw propagation, fracture behavior, and margin against fracture for high-pressure-, high-temperature-service steel vessels subjected to increasing pressurization and/or thermal shock. Gaging for analytical stress and strain procedures and ultrasonic and acoustic emission instrumentation can then be applied to monitor the vessel during testing and to study crack growth. This report presents flaw preparations for HSST fracture mechanics testing. Cracks were grown by two techniques: (1) a mechanical method wherein a premachined notch was sharpened by pressurization and (2) a method combining electron-beam welds and hydrogen charging to crack the chill zone of a rapidly placed autogenous weld. The mechanical method produces a naturally occurring growth shape controlled primarily by the shape of the machined notch; the welding-electrochemical method produces flaws of uniform depth from the surface of a wall or machined notch. Theories, details, discussions, and procedures are covered for both of the flaw-growing schemes

  4. Pumping behavior of sputter ion pumps

    International Nuclear Information System (INIS)

    Chou, T.S.; McCafferty, D.

    The ultrahigh vacuum requirements of ISABELLE is obtained by distributed pumping stations. Each pumping station consists of 1000 l/s titanium sublimation pump for active gases (N 2 , H 2 , O 2 , CO, etc.), and a 20 l/s sputter ion pump for inert gases (methane, noble gases like He, etc.). The combination of the alarming production rate of methane from titanium sublimation pumps (TSP) and the decreasing pumping speed of sputter ion pumps (SIP) in the ultrahigh vacuum region (UHV) leads us to investigate this problem. In this paper, we first describe the essential physics and chemistry of the SIP in a very clean condition, followed by a discussion of our measuring techniques. Finally measured methane, argon and helium pumping speeds are presented for three different ion pumps in the range of 10 -6 to 10 -11 Torr. The virtues of the best pump are also discussed

  5. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  6. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  7. Nonlinear dynamics of semiconductors in strong THz electric fields

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun

    In this thesis, we investigate nonlinear interactions of an intense terahertz (THz) field with semiconductors, in particular the technologically relevant materials silicon and silicon carbide. We reveal the time-resolved dynamics of the nonlinear processes by pump-probe experiments that involve...

  8. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  9. Semiconductor laser using multimode interference principle

    Science.gov (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

    2018-01-01

    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  10. Pump characteristics and applications

    CERN Document Server

    Volk, Michael

    2013-01-01

    Providing a wealth of information on pumps and pump systems, Pump Characteristics and Applications, Third Edition details how pump equipment is selected, sized, operated, maintained, and repaired. The book identifies the key components of pumps and pump accessories, introduces the basics of pump and system hydraulics as well as more advanced hydraulic topics, and details various pump types, as well as special materials on seals, motors, variable frequency drives, and other pump-related subjects. It uses example problems throughout the text, reinforcing the practical application of the formulae

  11. Trial design and manufacture of double spiral grooved vacuum pump; Double neji mizoshiki shinku pump no shisaku

    Energy Technology Data Exchange (ETDEWEB)

    Iguchi, M.; Sawada, T.; Sugiyama, W. [Akita University, Akita (Japan). Faculty of Mining; Watanabe, M.

    1997-04-25

    A spiral grooved vacuum pump and a compound molecular pump (the combination of a spiral grooved pump and a turbomolecular pump) are widely used in the thin-film industry for processes such as semiconductor production. Pumping performance is high at pressures below 1 000 Pa and low at pressures above 1000 Pa when the clearance between rotor and stator is on the order of 0.1 mm, which is the practical value for industrial use. The double spiral grooved vacuum pump is thought to have better pumping performance at such high pressures than the conventional spiral grooved vacuum pump. The aim of this study is to investigate the feasibility of use of the double spiral grooved vacuum pump at pressures above 1000 Pa. A double spiral grooved vacuum pump with a rotor of 150 mm diameter and 190 mm length has been designed and manufactured. Its pumping performance has been tested by experiments. The test results show the improvement in the performance at pressures above 1000 Pa compared to the conventional spiral grooved vacuum pump. 2 refs., 12 figs., 2 tabs.

  12. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  13. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  14. Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

    International Nuclear Information System (INIS)

    Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W.

    2005-01-01

    The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

  15. Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

    Energy Technology Data Exchange (ETDEWEB)

    Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W. (eds.)

    2005-07-01

    The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

  16. Cryostat for an well logging probe using a semiconductor detector

    International Nuclear Information System (INIS)

    Tapphorn, R.M.

    1978-01-01

    This invention proposes to construct an well logging tool of the type comprising a semiconductor radiation detector devoid of the defects usually observed. This aim is attained by means of a cryostat to cool a semiconductor radiation detector in a restricted space where the temperature is high. It includes a long box dimensioned to pass through a bore hole, a cryogenic chamber housed in the box, a vacuum chamber thermally insulating the cryogenic chamber and placed around it, a semiconductor radiation detector housed in the vacuum chamber in thermal contact with the cryogenic chamber and an active vacuum pump fitted in the box and connected to the vacuum chamber to maintain a vacuum in it. In an improved version, the vacuum pump is fitted outside the cryostat so that it operates independently of the temperature conditions in the cryostat. If the pump needs to be cooled to reduce the gas discharge, it can be fitted inside the cryostat and connected to the cryogenic chamber or a second cryostat can also be provided to cool the pump. The vacuum pump is designed to maintain the vacuum in the thermal insulation vacuum chamber at a desired figure, preferably 10 -4 Torr or under, in order to preserve the integrity of the thermal insulation layer around the cryogenic chamber and thereby extending the efficient operating period of the detector. The cryogenic material used is preferably of fusion resistant type such as Freon 22 [fr

  17. Frequency dependence of the pump-to-signal RIN transfer in fiber optical parametric amplifiers

    DEFF Research Database (Denmark)

    Pakarzadeh Dezfuli Nezhad, Hassan; Rottwitt, Karsten; Zakery, A.

    2009-01-01

    Using a numerical model, the frequency dependence of the pump-to-signal RIN transfer in FOPAs has been investigated. The model includes fiber loss, pump depletion as well as difference in group velocity among interacting beams.......Using a numerical model, the frequency dependence of the pump-to-signal RIN transfer in FOPAs has been investigated. The model includes fiber loss, pump depletion as well as difference in group velocity among interacting beams....

  18. Internal pump

    International Nuclear Information System (INIS)

    Kushima, Jun; Hayashi, Youjiro; Ueda, Masayuki.

    1997-01-01

    The present invention relates to an internal pump. A water hole allowing communication between internal and external circumferences of a stretch tube is provided at the portion of the stretch tube corresponding to a position where an end face of a nozzle portion of a motor case and an end face of a diffuser are joined with each other so that hot filtered water inside a pressure container which has entered from where the end face of the nozzle portion of the motor case and the end face of the diffuser are joined with each other is combined with the purged water so that it can be sent back to the pressure container again. (author) figs

  19. Development of ceramics for heavy-duty roller bearings in key sectors of future technologies. Ceramic bearings for turbomolecular pumps in semiconductor industry. Final report; Entwicklung von Hochleistungskeramiken fuer Keramikwaelzlager unter extremen Belastungen in Schluesselbereichen von Zukunftstechnologien. Keramikwaelzlager fuer Turbomolekularpumpen in der Halbleiterindustrie. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Stueber, H.G.; Adamietz, R.; Binninger, M. [and others

    1999-09-01

    The examined ceramic material shows high resistance against aggressive gases used in the semiconductor industry. In the test rigs for emergency bearings the full ceramic bearings without any lubricant didn't reach the requested life. Bearings with ZrO{sub 2}-rings reached higher life time compared to bearings with Si{sub 3}N{sub 4}-rings. The life of the emergency bearings increased when using C-ion implanted rings. By using this method the friction ratio decreased. In this case, bearings with ZrO{sub 2}-rings get nearly the life of the old standard hybrid emergency bearings. But they can't reach the life time of the latest state of development of hybrid bearings. A two row paired angular contact bearing seems to be a most promising modification. But this design shows problems while manufacturing. The so called pin-bush-bearing (a sliding friction bearing solution) shows good test results. It will be possible to optimise this bearing for different pumps. Tests with ceramic bearings in a conventional levitated pump were planned. It was not possible to start the tests because of the higher priority of the 'emergency bearing project'. (orig.) [German] Der untersuchte keramische Werkstoff weist eine hohe Bestaendigkeit gegenueber den in der Halbleiterindustrie verwendeten aggressiven Gasen auf. In den Fanglagerversuchen wurde deutlich, dass die untersuchten Vollkeramik-Waelzlager ohne Schmierstoff nicht die geforderten Standzeiten erreichen. Im Vergleich zwischen Si{sub 3}N{sub 4}-Ringen zur ZrO{sub 2}-Ringen lassen die Oxidringe eine hoehere Lebensdauer erwarten. Eine Verbesserung der Standzeiten konnte durch mit C-Ionen implantierten Ringe erzielt werden. Mit dieser Reibwertverbesserung konnten die Lager mit ZrO{sub 2}-Ringen zwar den alten Serienstandard mit Hybridlagern in etwa erreichen, andererseits sind zum jetzigen Serienstandard noch deutliche Unterschiede zu beobachten. Eine vielversprechende Modifikation des Lagers in Richtung eines

  20. Breastfeeding FAQs: Pumping

    Science.gov (United States)

    ... of pump is best? You can buy or rent a breast pump from lactation consultants, hospitals, retail ... place to do it. Many companies offer their employees pumping and nursing areas. If yours doesn't, ...

  1. Radio Pumping of Ionospheric Plasma with Orbital Angular Momentum

    International Nuclear Information System (INIS)

    Leyser, T. B.; Norin, L.; McCarrick, M.; Pedersen, T. R.; Gustavsson, B.

    2009-01-01

    Experimental results are presented of pumping ionospheric plasma with a radio wave carrying orbital angular momentum (OAM), using the High Frequency Active Auroral Research Program (HAARP) facility in Alaska. Optical emissions from the pumped plasma turbulence exhibit the characteristic ring-shaped morphology when the pump beam carries OAM. Features of stimulated electromagnetic emissions (SEE) that are attributed to cascading Langmuir turbulence are well developed for a regular beam but are significantly weaker for a ring-shaped OAM beam in which case upper hybrid turbulence dominates the SEE

  2. Extracting hot carriers from photoexcited semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoyang

    2014-12-10

    This research program addresses a fundamental question related to the use of nanomaterials in solar energy -- namely, whether semiconductor nanocrystals (NCs) can help surpass the efficiency limits, the so-called “Shockley-Queisser” limit, in conventional solar cells. In these cells, absorption of photons with energies above the semiconductor bandgap generates “hot” charge carriers that quickly “cool” to the band edges before they can be utilized to do work; this sets the solar cell efficiency at a limit of ~31%. If instead, all of the energy of the hot carriers could be captured, solar-to-electric power conversion efficiencies could be increased, theoretically, to as high as 66%. A potential route to capture this energy is to utilize semiconductor nanocrystals. In these materials, the quasi-continuous conduction and valence bands of the bulk semiconductor become discretized due to confinement of the charge carriers. Consequently, the energy spacing between the electronic levels can be much larger than the highest phonon frequency of the lattice, creating a “phonon bottleneck” wherein hot-carrier relaxation is possible via slower multiphonon emission. For example, hot-electron lifetimes as long as ~1 ns have been observed in NCs grown by molecular beam epitaxy. In colloidal NCs, long lifetimes have been demonstrated through careful design of the nanocrystal interfaces. Due to their ability to slow electronic relaxation, semiconductor NCs can in principle enable extraction of hot carriers before they cool to the band edges, leading to more efficient solar cells.

  3. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  4. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  5. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  6. Environmental safety issues for semiconductors (research on scarce materials recycling)

    International Nuclear Information System (INIS)

    Izumi, Shigekazu

    2004-01-01

    In the 21st century, in the fabrication of various industrial parts, particularly, current and future electronics devices in the semiconductor industry, environmental safety issues should be carefully considered. We coined a new term, environmental safety issues for semiconductors, considering our semiconductor research and technology which include environmental and ecological factors. The main object of this analysis is to address the present situation of environmental safety problems in the semiconductor industry; some of which are: (1) the generation and use of hazardous toxic gases in the crystal growth procedure such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), (2) the generation of industrial toxic wastes in the semiconductor process and (3) scarce materials recycling from wastes in the MBE and MOCVD growth procedure

  7. Semiconductor Laser Tracking Frequency Distance Gauge

    Science.gov (United States)

    Phillips, James D.; Reasenberg, Robert D.

    2009-01-01

    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  8. LMFBR with booster pump in pumping loop

    International Nuclear Information System (INIS)

    Rubinstein, H.J.

    1975-01-01

    A loop coolant circulation system is described for a liquid metal fast breeder reactor (LMFBR) utilizing a low head, high specific speed booster pump in the hot leg of the coolant loop with the main pump located in the cold leg of the loop, thereby providing the advantages of operating the main pump in the hot leg with the reliability of cold leg pump operation

  9. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  10. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  11. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  12. Liquid metal pump

    Science.gov (United States)

    Pennell, William E.

    1982-01-01

    The liquid metal pump comprises floating seal rings and attachment of the pump diffuser to the pump bowl for isolating structural deflections from the pump shaft bearings. The seal rings also eliminate precision machining on large assemblies by eliminating the need for a close tolerance fit between the mounting surfaces of the pump and the seals. The liquid metal pump also comprises a shaft support structure that is isolated from the pump housing for better preservation of alignment of shaft bearings. The shaft support structure also allows for complete removal of pump internals for inspection and repair.

  13. Liquid metal pump

    International Nuclear Information System (INIS)

    Pennell, W.E.

    1982-01-01

    The liquid metal pump comprises floating seal rings and attachment of the pump diffuser to the pump bowl for isolating structural deflections from the pump shaft bearings. The seal rings also eliminate precision machining on large assemblies by eliminating the need for a close tolerance fit between the mounting surfaces of the pump and the seals. The liquid metal pump also comprises a shaft support structure that is isolated from the pump housing for better preservation of alignment of shaft bearings. The shaft support structure also allows for complete removal of pump internals for inspection and repair

  14. Heat pump technology

    CERN Document Server

    Von Cube, Hans Ludwig; Goodall, E G A

    2013-01-01

    Heat Pump Technology discusses the history, underlying concepts, usage, and advancements in the use of heat pumps. The book covers topics such as the applications and types of heat pumps; thermodynamic principles involved in heat pumps such as internal energy, enthalpy, and exergy; and natural heat sources and energy storage. Also discussed are topics such as the importance of the heat pump in the energy industry; heat pump designs and systems; the development of heat pumps over time; and examples of practical everyday uses of heat pumps. The text is recommended for those who would like to kno

  15. Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

    Science.gov (United States)

    Yan, Jie-Yun

    2018-06-01

    Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

  16. COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

    DEFF Research Database (Denmark)

    2009-01-01

    The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...... for generation of a detector signal by mixing of the reference beam with light emitted from the particles in the measurement volume illuminated by the measurement beam, and a signal processor for generating a velocity signal corresponding to the velocity of the particles based on the detector signal....

  17. Synchronously pumped optical parametric oscillation in periodically poled lithium niobate with 1-W average output power

    NARCIS (Netherlands)

    Graf, T.; McConnell, G.; Ferguson, A.I.; Bente, E.A.J.M.; Burns, D.; Dawson, M.D.

    1999-01-01

    We report on a rugged all-solid-state laser source of near-IR radiation in the range of 1461–1601 nm based on a high-power Nd:YVO4 laser that is mode locked by a semiconductor saturable Bragg reflector as the pump source of a synchronously pumped optical parametric oscillator with a periodically

  18. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  19. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  20. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  1. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  2. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  3. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  4. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  5. Punchets: nonlinear transport in Hamiltonian pump-ratchet hybrids

    Science.gov (United States)

    Dittrich, Thomas; Medina Sánchez, Nicolás

    2018-02-01

    ‘Punchets’ are hybrids between ratchets and pumps, combining a spatially periodic static potential, typically asymmetric under space inversion, with a local driving that breaks time-reversal invariance, and are intended to model metal or semiconductor surfaces irradiated by a collimated laser beam. Their crucial feature is irregular driven scattering between asymptotic regions supporting periodic (as opposed to free) motion. With all binary spatio-temporal symmetries broken, scattering in punchets typically generates directed currents. We here study the underlying nonlinear transport mechanisms, from chaotic scattering to the parameter dependence of the currents, in three types of Hamiltonian models, (i) with spatially periodic potentials where only in the driven scattering region, spatial and temporal symmetries are broken, and (ii), spatially asymmetric (ratchet) potentials with a driving that only breaks time-reversal invariance. As more realistic models of laser-irradiated surfaces, we consider (iii), a driving in the form of a running wave confined to a compact region by a static envelope. In this case, the induced current can even run against the direction of wave propagation, drastically evidencing its nonlinear nature. Quantizing punchets is indicated as a viable research perspective.

  6. Solar Pumping : The Basics

    OpenAIRE

    World Bank Group

    2018-01-01

    Solar photovoltaic water pumping (SWP) uses energy from solar photovoltaic (PV) panels to power an electric water pump. The entire process, from sunlight to stored energy, is elegant and simple. Over last seven years, the technology and price of solar pumping have evolved dramatically and hence the opportunities it presents. Solar pumping is most competitive in regions with high solar inso...

  7. Multiple pump housing

    Science.gov (United States)

    Donoho, II, Michael R.; Elliott; Christopher M.

    2010-03-23

    A fluid delivery system includes a first pump having a first drive assembly, a second pump having a second drive assembly, and a pump housing. At least a portion of each of the first and second pumps are located in the housing.

  8. Applications of nuclear microprobes in the semiconductor industry

    International Nuclear Information System (INIS)

    Takai, M.

    1996-01-01

    Possible nuclear microprobe applications in semiconductor industries are discussed. A unique technique using soft-error mapping and ion beam induced current measurements for reliability testing of dynamic random access memories such as soft-error immunity and noise carrier suppression has been developed for obtaining design parameters of future memory devices. Nano-probes and small installation areas are required for the use of microprobes in the semiconductor industry. Issues arising from microprobe applications such as damage induced by the probe beam are clarified. (orig.)

  9. Centrifugal pump handbook

    CERN Document Server

    Pumps, Sulzer

    2010-01-01

    This long-awaited new edition is the complete reference for engineers and designers working on pump design and development or using centrifugal pumps in the field. This authoritative guide has been developed with access to the technical expertise of the leading centrifugal pump developer, Sulzer Pumps. In addition to providing the most comprehensive centrifugal pump theory and design reference with detailed material on cavitation, erosion, selection of materials, rotor vibration behavior and forces acting on pumps, the handbook also covers key pumping applications topics and operational

  10. Flow tube used to cool solar-pumped laser

    Science.gov (United States)

    1968-01-01

    A flow tube has been designed and constructed to provide two major functions in the application of a laser beam for transmission of both sound and video. It maintains the YAG laser at the proper operating temperature of 300 degrees K under solar pumping conditions, and it serves as a pump cavity for the laser crystal.

  11. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  12. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  13. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  14. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  15. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  16. Frequency doubling of an InGaAs multiple quantum wells semiconductor disk laser

    Science.gov (United States)

    Lidan, Jiang; Renjiang, Zhu; Maohua, Jiang; Dingke, Zhang; Yuting, Cui; Peng, Zhang; Yanrong, Song

    2018-01-01

    We demonstrate a good beam quality 483 nm blue coherent radiation from a frequency doubled InGaAs multiple quantum wells semiconductor disk laser. The gain chip is consisted of 6 repeats of strain uncompensated InGaAs/GaAs quantum wells and 25 pairs of GaAs/AlAs distributed Bragg reflector. A 4 × 4 × 7 mm3 type I phase-matched BBO nonlinear crystal is used in a V-shaped laser cavity for the second harmonic generation, and 210 mW blue output power is obtained when the absorbed pump power is 3.5 W. The M2 factors of the laser beam in x and y directions are about 1.04 and 1.01, respectively. The output power of the blue laser is limited by the relatively small number of the multiple quantum wells, and higher power can be expected by increasing the number of the multiple quantum wells and improving the heat management of the laser.

  17. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  18. Pumping mechanisms in sputter-ion pumps low pressure operation

    International Nuclear Information System (INIS)

    Welch, K.M.

    1991-01-01

    It is shown that significant H 2 pumping occurs in the walls of triode pumps. Also, H 2 is pumped in the anode cells of sputter-ion pumps. This pumping occurs in a manner similar to that by which the inert gases are pumped. That is, H 2 pumped in the walls of the anode cells by high energy neutral burial. Hydrogen in the pump walls and anodes limits the base pressure of the pump. 13 refs., 5 figs., 1 tab

  19. Pumping mechanisms in sputter-ion pumps low pressure operation

    International Nuclear Information System (INIS)

    Welch, K.M.

    1991-01-01

    It is shown that significant H 2 pumping occurs in the walls of triode pumps. Also, H 2 is pumped in the anode cells of sputter-ion pumps. This pumping occurs in a manner similar to that by which the inert gases are pumped. That is, H 2 is pumped in the walls of the anode cells by high energy neutral burial. Hydrogen in the pump walls and anodes limits the base pressure of the pump

  20. Adsorption pump for helium pumping out

    International Nuclear Information System (INIS)

    Donde, A.L.; Semenenko, Yu.E.

    1981-01-01

    Adsorption pump with adsorbent cooling by liquid helium is described. Shuttered shield protecting adsorbent against radiation is cooled with evaporating helium passing along the coil positioned on the shield. The pump is also equipped with primed cylindrical shield, cooled with liquid nitrogen. The nitrogen shield has in the lower part the shuttered shield, on the pump casing there is a valve used for pump pre-burning, and valves for connection to recipient as well. Pumping- out rates are presented at different pressures and temperatures of adsorbent. The pumping-out rate according to air at absorbent cooling with liquid nitrogen constituted 5x10 -4 Pa-3000 l/s, at 2x10 -2 Pa-630 l/s. During the absorbent cooling with liquid hydrogen the pumping-out rate according to air was at 4x10 -4 Pa-580 l/s, at 2x10 -3 Pa-680 l/s, according to hydrogen - at 8x10 -5 Pa-2500 l/s, at 5x10 -3 Pa-4200 l/s. During adsorbent cooling with liquid helium the rate of pumping-out according to hydrogen at 3x10 5 Pa-2400% l/s, at 6x10 3 Pa-1200 l/s, and according to helium at 3.5x10 -5 Pa-2800 l/s, at 4x10 -3 Pa-1150 l/s. The limit vacuum is equal to 1x10 -7 Pa. The volume of the vessel with liquid helium is equal to 3.5 l. Helium consumption is 80 cm 3 /h. Consumption of liquid nitrogen from the shield is 400 cm 3 /h. The limit pressure in the pump is obtained after forevacuum pumping-out (adsorbent regeneration) at 300 K temperature. The pump is made of copper. The pump height together with primed tubes is 800 mm diameter-380 mm [ru

  1. Continuously pumping and reactivating gas pump

    International Nuclear Information System (INIS)

    Batzer, T.H.; Call, W.R.

    1984-01-01

    Apparatus for continuous pumping using cycling cyropumping panels. A plurality of liquid helium cooled panels are surrounded by movable nitrogen cooled panels the alternatively expose or shield the helium cooled panels from the space being pumped. Gases condense on exposed helium cooled panels until the nitrogen cooled panels are positioned to isolate the helium cooled panels. The helium cooled panels are incrementally warmed, causing captured gases to accumulate at the base of the panels, where an independent pump removes the gases. After the helium cooled panels are substantially cleaned of condensate, the nitrogen cooled panels are positioned to expose the helium cooled panels to the space being pumped

  2. Continuously pumping and reactivating gas pump

    Science.gov (United States)

    Batzer, Thomas H.; Call, Wayne R.

    1984-01-01

    Apparatus for continuous pumping using cycling cyropumping panels. A plurality of liquid helium cooled panels are surrounded by movable nitrogen cooled panels the alternatively expose or shield the helium cooled panels from the space being pumped. Gases condense on exposed helium cooled panels until the nitrogen cooled panels are positioned to isolate the helium cooled panels. The helium cooled panels are incrementally warmed, causing captured gases to accumulate at the base of the panels, where an independent pump removes the gases. After the helium cooled panels are substantially cleaned of condensate, the nitrogen cooled panels are positioned to expose the helium cooled panels to the space being pumped.

  3. Thermodynamic concepts in semiconductor quantum dot technology

    International Nuclear Information System (INIS)

    Shchukin, V.

    2001-01-01

    Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)

  4. Cornell electron beam ion source

    International Nuclear Information System (INIS)

    Kostroun, V.O.; Ghanbari, E.; Beebe, E.N.; Janson, S.W.

    1981-01-01

    An electron beam ion source (EBIS) for the production of low energy, multiply charged ion beams to be used in atomic physics experiments has been designed and constructed. An external high perveance electron gun is used to launch the electron beam into a conventional solenoid. Novel features of the design include a distributed sputter ion pump to create the ultrahigh vacuum environment in the ionization region of the source and microprocessor control of the axial trap voltage supplies

  5. MCNPX calculations for electron irradiated semiconductor detectors

    International Nuclear Information System (INIS)

    Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

    2014-01-01

    This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

  6. Laser systems configured to output a spectrally-consolidated laser beam and related methods

    Science.gov (United States)

    Koplow, Jeffrey P [San Ramon, CA

    2012-01-10

    A laser apparatus includes a plurality of pumps each of which is configured to emit a corresponding pump laser beam having a unique peak wavelength. The laser apparatus includes a spectral beam combiner configured to combine the corresponding pump laser beams into a substantially spatially-coherent pump laser beam having a pump spectrum that includes the unique peak wavelengths, and first and second selectively reflective elements spaced from each other to define a lasing cavity including a lasing medium therein. The lasing medium generates a plurality of gain spectra responsive to absorbing the pump laser beam. Each gain spectrum corresponds to a respective one of the unique peak wavelengths of the substantially spatially-coherent pump laser beam and partially overlaps with all other ones of the gain spectra. The reflective elements are configured to promote emission of a laser beam from the lasing medium with a peak wavelength common to each gain spectrum.

  7. Imaging the motion of electrons across semiconductor heterojunctions

    Science.gov (United States)

    Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

    2017-01-01

    Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

  8. Direct solar-pumped iodine laser amplifier

    Science.gov (United States)

    Han, Kwang S.

    1987-01-01

    This semiannual progress report covers the period from March 1, 1987 to September 30, 1987 under NASA grant NAG1-441 entitled 'Direct solar-pumped iodine laser amplifier'. During this period Nd:YAG and Nd:Cr:GSGG crystals have been tested for the solar-simulator pumped cw laser, and loss mechanisms of the laser output power in a flashlamp-pumped iodine laser also have been identified theoretically. It was observed that the threshold pump-beam intensities for both Nd:YAG and Nd:Cr:GSGG crystals were about 1000 solar constants, and the cw laser operation of the Nd:Cr:GSGG crystal was more difficult than that of the Nd:YAG crystal under the solar-simulator pumping. The possibility of the Nd:Cr:GSGG laser operation with a fast continuously chopped pumping was also observed. In addition, good agreement between the theoretical calculations and the experimental data on the loss mechanisms of a flashlamp-pumped iodine laser at various fill pressures and various lasants was achieved.

  9. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  10. Lattice Location of Transition Metals in Semiconductors

    CERN Multimedia

    2002-01-01

    %IS366 %title\\\\ \\\\Transition metals (TMs) in semiconductors have been the subject of considerable research for nearly 40 years. This is due both to their role as important model impurities for deep centers in semiconductors, and to their technological impact as widespread contaminants in Si processing, where the miniaturization of devices requires to keep their sheet concentration below 10$^{10}$ cm$^{-2}$. As a consequence of the low TM solubility, conventional ion beam methods for direct lattice location have failed completely in identifying the lattice sites of isolated transition metals. Although electron paramagnetic resonance (EPR) has yielded valuable information on a variety of TM centers, it has been unable to detect certain defects considered by theory, e.g., isolated interstitial or substitutional Cu in Si. The proposed identity of other EPR centers such as substitutional Fe in Si, still needs confirmation by additional experimental methods. As a consequence, the knowledge on the structural propert...

  11. Pumps in mining

    Energy Technology Data Exchange (ETDEWEB)

    1979-01-01

    This article looks at the pump industry as a whole, its historical links with the mining industry, their parallel develop ment, and at the individual manufacturers and pumps, services and auxillary products they have to offer.

  12. Metal/oxide/semiconductor interface investigated by monoenergetic positrons

    Science.gov (United States)

    Uedono, A.; Tanigawa, S.; Ohji, Y.

    1988-10-01

    Variable-energy positron-beam studies have been carried out for the first time on a metal/oxide/semiconductor (MOS) structure of polycrystalline Si/SiO 2/Si-substrate. We were successful in collecting injected positrons at the SiO 2/Si interface by the application of an electric field between the MOS electrodes.

  13. Beat-wave generation of plasmons in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1995-08-01

    It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap seimconductors (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas

  14. Push-pull optical pumping of pure superposition states

    International Nuclear Information System (INIS)

    Jau, Y.-Y.; Miron, E.; Post, A.B.; Kuzma, N.N.; Happer, W.

    2004-01-01

    A new optical pumping method, 'push-pull pumping', can produce very nearly pure, coherent superposition states between the initial and the final sublevels of the important field-independent 0-0 clock resonance of alkali-metal atoms. The key requirement for push-pull pumping is the use of D1 resonant light which alternates between left and right circular polarization at the Bohr frequency of the state. The new pumping method works for a wide range of conditions, including atomic beams with almost no collisions, and atoms in buffer gases with pressures of many atmospheres

  15. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  16. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  17. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  18. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  19. Photovoltaic pump systems

    Science.gov (United States)

    Klockgether, J.; Kiessling, K. P.

    1983-09-01

    Solar pump systems for the irrigation of fields and for water supply in regions with much sunshine are discussed. For surface water and sources with a hoisting depth of 12 m, a system with immersion pumps is used. For deep sources with larger hoisting depths, an underwater motor pump was developed. Both types of pump system meet the requirements of simple installation and manipulation, safe operation, maintenance free, and high efficiency reducing the number of solar cells needed.

  20. Time-resolved terahertz spectroscopy of semiconductor nanostructures

    DEFF Research Database (Denmark)

    Porte, Henrik

    This thesis describes time-resolved terahertz spectroscopy measurements on various semiconductor nanostructures. The aim is to study the carrier dynamics in these nanostructures on a picosecond timescale. In a typical experiment carriers are excited with a visible or near-infrared pulse and by me......This thesis describes time-resolved terahertz spectroscopy measurements on various semiconductor nanostructures. The aim is to study the carrier dynamics in these nanostructures on a picosecond timescale. In a typical experiment carriers are excited with a visible or near-infrared pulse...... and by measuring the transmission of a terahertz probe pulse, the photoconductivity of the excited sample can be obtained. By changing the relative arrival time at the sample between the pump and the probe pulse, the photoconductivity dynamics can be studied on a picosecond timescale. The rst studied semiconductor...

  1. Rotary magnetic heat pump

    Science.gov (United States)

    Kirol, L.D.

    1987-02-11

    A rotary magnetic heat pump constructed without flow seals or segmented rotor accomplishes recuperation and regeneration by using split flow paths. Heat exchange fluid pumped through heat exchangers and returned to the heat pump splits into two flow components: one flowing counter to the rotor rotation and one flowing with the rotation. 5 figs.

  2. Vertical pump assembly

    International Nuclear Information System (INIS)

    Dohnal, M.; Rosel, J.; Skarka, V.

    1988-01-01

    The mounting is described of the drive assembly of a vertical pump for nuclear power plants in areas with seismic risk. The assembly is attached to the building floor using flexible and damping elements. The design allows producing seismically resistant pumps without major design changes in the existing types of vertical pumps. (E.S.). 1 fig

  3. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  4. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  5. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  6. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  7. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  8. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  9. Singly-resonant sum frequency generation of visible light in a semiconductor disk laser

    DEFF Research Database (Denmark)

    Andersen, Martin Thalbitzer; Schlosser, P.J.; Hastie, J.E.

    2009-01-01

    In this paper a generic approach for visible light generation is presented. It is based on sum frequency generation between a semiconductor disk laser and a solid-state laser, where the frequency mixing is achieved within the cavity of the semiconductor disk laser using a singlepass of the solid......-state laser light. This exploits the good beam quality and high intra-cavity power present in the semiconductor disk laser to achieve high conversion efficiency. Combining sum frequency mixing and semiconductor disk lasers in this manner allows in principle for generation of any wavelength within the visible...

  10. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  11. Spin-transport-phenomena in metals, semiconductors, and insulators

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, Matthias Klaus

    2012-07-19

    Assuming that one could deterministically inject, transport, manipulate, store and detect spin information in solid state devices, the well-established concepts of charge-based electronics could be transferred to the spin realm. This thesis explores the injection, transport, manipulation and storage of spin information in metallic conductors, semiconductors, as well as electrical insulators. On the one hand, we explore the spin-dependent properties of semiconducting zinc oxide thin films deposited via laser-molecular beam epitaxy (laser-MBE). After demonstrating that the zinc oxide films fabricated during this thesis have excellent structural, electrical, and optical properties, we investigate the spin-related properties by optical pump/probe, electrical injection/optical detection, and all electrical spin valve-based experiments. The two key results from these experiments are: (i) Long-lived spin states with spin dephasing times of 10 ns at 10 K related to donor bound excitons can be optically addressed. (ii) The spin dephasing times relevant for electrical transport-based experiments are {<=} 2 ns at 10 K and are correlated with structural quality. On the other hand we focus on two topics of current scientific interest: the comparison of the magnetoresistance to the magnetothermopower of conducting ferromagnets, and the investigation of pure spin currents generated in ferromagnetic insulator/normal metal hybrid structures. We investigate the magnetoresistance and magnetothermopower of gallium manganese arsenide and Heusler thin films as a function of external magnetic field orientation. Using a series expansion of the resistivity and Seebeck tensors and the inherent symmetry of the sample's crystal structure, we show that a full quantitative extraction of the transport tensors from such experiments is possible. Regarding the spin currents in ferromagnetic insulator/normal metal hybrid structures we studied the spin mixing conductance in yttrium iron garnet

  12. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  13. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  14. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  15. Detection of pump degradation

    International Nuclear Information System (INIS)

    Casada, D.A.

    1994-01-01

    There are a variety of stressors that can affect the operation of centrifugal pumps. These can generally be classified as: Mechanical; Hydraulic; Tribological; Chemical; and Other (including those associated with the pump driver). Although these general stressors are active in essentially all centrifugal pumps, the stressor level and the extent of wear and degradation can vary greatly. Parameters that affect the extent of stressor activity are manifold. In order to assure the long-term operational readiness of a pump, it is important to both understand the nature and magnitude of the specific degradation mechanisms and to monitor the performance of the pump

  16. Liquid metal pump

    International Nuclear Information System (INIS)

    Pennell, W.E.

    1981-01-01

    A liquid metal pump comprising a shaft support structure which is isolated from the pump housing for better preservation of alignment of shaft bearings. The shaft carries an impeller and the support structure carries an impeller cage which is slidably disposed in a diffuser so as to allow complete removal of pump internals for inspection and repair. The diffuser is concentrically supported in the pump housing which also takes up all reaction forces generated by the discharge of the liquid metal from the diffuser, with floating seals arranged between impeller cage and the diffuser. The space between the diffuser and the pump housing permits the incoming liquid to essentially surround the diffuser. (author)

  17. Jet pump assisted artery

    Science.gov (United States)

    1975-01-01

    A procedure for priming an arterial heat pump is reported; the procedure also has a means for maintaining the pump in a primed state. This concept utilizes a capillary driven jet pump to create the necessary suction to fill the artery. Basically, the jet pump consists of a venturi or nozzle-diffuser type constriction in the vapor passage. The throat of this venturi is connected to the artery. Thus vapor, gas, liquid, or a combination of the above is pumped continuously out of the artery. As a result, the artery is always filled with liquid and an adequate supply of working fluid is provided to the evaporator of the heat pipe.

  18. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  19. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  20. Apparatus for uniform pumping of lasing media

    International Nuclear Information System (INIS)

    Condit, W.C.; Eccles, S.F.

    1975-01-01

    Electron beam pumping of gaseous or liquid lasing media is carried out by means of electron pulses generated by an electron accelerator. Between the accelerator and the laser cavity, the electron pulse is subjected to a magnetic field to turn the electron pulse approximately through a quarter orbit, so that in essence the direction of pulse travel is changed from axial to lateral. This procedure then enables pumping of the laser cavity uniformly and simultaneously, or in any desired traveling wave mode, over the entire length of the laser cavity with relatively short, and highly intense, electron pulses. (U.S.)

  1. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  2. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  3. Two-dimensional Semiconductor-Superconductor Hybrids

    DEFF Research Database (Denmark)

    Suominen, Henri Juhani

    This thesis investigates hybrid two-dimensional semiconductor-superconductor (Sm-S) devices and presents a new material platform exhibiting intimate Sm-S coupling straight out of the box. Starting with the conventional approach, we investigate coupling superconductors to buried quantum well....... To overcome these issues we integrate the superconductor directly into the semiconducting material growth stack, depositing it in-situ in a molecular beam epitaxy system under high vacuum. We present a number of experiments on these hybrid heterostructures, demonstrating near unity interface transparency...

  4. Pumps for nuclear facilities

    International Nuclear Information System (INIS)

    1999-01-01

    The guide describes how the Finnish Radiation and Nuclear Safety Authority (STUK) controls pumps and their motors at nuclear power plants and other nuclear facilities. The scope of the control is determined by the Safety Class of the pump in question. The various phases of the control are: (1) review of construction plan, (2) control of manufacturing, and construction inspection, (3) commissioning inspection, and (4) control during operation. STUK controls Safety Class 1, 2 and 3 pumps at nuclear facilities as described in this guide. STUK inspects Class EYT (non-nuclear) pumps separately or in connection with the commissioning inspections of the systems. This guide gives the control procedure and related requirements primarily for centrifugal pumps. However, it is also applied to the control of piston pumps and other pump types not mentioned in this guide

  5. Internal pump monitoring device

    International Nuclear Information System (INIS)

    Kurosaki, Toshikazu.

    1996-01-01

    In the present invention, a thermometer is disposed at the upper end of an internal pump casing of a coolant recycling system in a BWR type reactor to detect leakage of reactor water thereby ensuring the improvement of reliability of the internal pump. Namely, a thermometer is disposed, which can detect temperature elevation occurred when water in the internal pump leaked from a reactor pressure vessel passes through the gap between a stretch tube and an upper end of the pump casing. Signals from the thermometer are transmitted to a signal processing device by an instrumentation cable. The signal processing device generates an alarm when the temperature signal exceeds a predetermined value and announces that leakage of reactor water occurs in the internal pump. Since the present invention can detect the leakage of the reactor water in the pump casing in an early stage, it can contribute to the improvement of the safety and reliability of the internal pump. (I.S.)

  6. Thermodynamic performance of multi-stage gradational lead screw vacuum pump

    Science.gov (United States)

    Zhao, Fan; Zhang, Shiwei; Sun, Kun; Zhang, Zhijun

    2018-02-01

    As a kind of dry mechanical vacuum pump, the twin-screw vacuum pump has an outstanding pumping performance during operation, widely used in the semiconductor industry. Compared with the constant lead screw (CLS) vacuum pump, the gradational lead screw (GLS) vacuum pump is more popularly applied in recent years. Nevertheless, not many comparative studies on the thermodynamic performance of GLS vacuum pump can be found in the literature. Our study focuses on one type of GLS vacuum pump, the multi-stage gradational lead screw (MGLS) vacuum pump, gives a detailed description of its construction and illustrates it with the drawing. Based on the structural analysis, the thermodynamic procedure is divided into four distinctive processes, including sucking process, transferring (compressing) process, backlashing process and exhausting process. The internal mechanism of each process is qualitatively illustrated and the mathematical expressions of seven thermodynamic parameters are given under the ideal situation. The performance curves of MGLS vacuum pump are plotted by MATLAB software and compared with those of the CLS vacuum pump in the same case. The results can well explain why the MGLS vacuum pump has more favorable pumping performance than the CLS vacuum pump in saving energy, reducing noise and heat dissipation.

  7. Pump element for a tube pump

    DEFF Research Database (Denmark)

    2011-01-01

    The invention relates to a tube pump comprising a tube and a pump element inserted in the tube, where the pump element comprises a rod element and a first and a second non-return valve member positioned a distance apart on the rod element. The valve members are oriented in the same direction...... relative to the rod element so as to allow for a fluid flow in the tube through the first valve member, along the rod element, and through the second valve member. The tube comprises an at least partly flexible tube portion between the valve members such that a repeated deformation of the flexible tube...... portion acts to alternately close and open the valve members thereby generating a fluid flow through the tube. The invention further relates to a pump element comprising at least two non-return valve members connected by a rod element, and for insertion in an at least partly flexible tube in such tube...

  8. Pumping behavior of sputtering ion pump

    Energy Technology Data Exchange (ETDEWEB)

    Chou, T.S.; Bittner, J.; Schuchman, J.

    1991-12-31

    To optimize the design of a distributed ion pump (DIP) for the Superconducting X-Ray Lithography Source (SXLS) the stability of the rotating electron cloud at very high magnetic field beyond transition, must be re-examined. In this work the pumping speed and frequency spectrum of a DIP at various voltages (1 to 10 KV) and various magnetic fields (0.1 to 4 Tesla) are measured. Three cell diameters 10 mm, 5 mm and 2.5 mm, each 8 mm long, and with 3 or 4 mm gaps between anode and cathode are investigated. In this study both the titanium cathodes and the stainless steel anode plates are perforated with holes comparable in size to the anode cell diameters. Only the partially saturated pumping behavior is under investigation. The ultimate pressure and conditioning of the pump will be investigated at a later date when the stability criterion for the electron cloud is better understood.

  9. Pumping behavior of sputtering ion pump

    Energy Technology Data Exchange (ETDEWEB)

    Chou, T.S.; Bittner, J.; Schuchman, J.

    1991-01-01

    To optimize the design of a distributed ion pump (DIP) for the Superconducting X-Ray Lithography Source (SXLS) the stability of the rotating electron cloud at very high magnetic field beyond transition, must be re-examined. In this work the pumping speed and frequency spectrum of a DIP at various voltages (1 to 10 KV) and various magnetic fields (0.1 to 4 Tesla) are measured. Three cell diameters 10 mm, 5 mm and 2.5 mm, each 8 mm long, and with 3 or 4 mm gaps between anode and cathode are investigated. In this study both the titanium cathodes and the stainless steel anode plates are perforated with holes comparable in size to the anode cell diameters. Only the partially saturated pumping behavior is under investigation. The ultimate pressure and conditioning of the pump will be investigated at a later date when the stability criterion for the electron cloud is better understood.

  10. Quantum pump in a system with both Rashba and Dresselhaus spin–orbit couplings

    International Nuclear Information System (INIS)

    Xiao, Yun-Chang; Deng, Wei-Yin; Deng, Wen-Ji; Zhu, Rui; Wang, Rui-Qiang

    2013-01-01

    We investigate the adiabatic quantum pump phenomena in a semiconductor with Rashba and Dresselhaus spin–orbit couplings (SOCs). Although it is driven by applying spin-independent potentials, the system can pump out spin-dependent currents, i.e., generate nonzero charge and spin currents at the same time. The SOC can modulate both the magnitude and the direction of currents, exhibiting an oscillating behavior. Moreover, it is shown that the spin current has different sensitivities to two types of the SOC. These results provide an alternative method to adjust pumped current and might be helpful for designing spin pumping devices.

  11. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  12. Self-trapped excitonic green emission from layered semiconductors

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2009-01-01

    Crystals of layered semiconductor are grown by Bridgman technique and are studied them under two-photon excitation by a Q-switched 20-ns pulse laser. The photoluminescence (PL) emission spectra of the crystals are measured at various pumping powers and temperatures. The PL spectra appear broad and structureless emissions with their peaks in the green spectral region. The characteristic emissions are from self-trapped excitons of the crystals. An analysis of the spectra measured at various pumping powers shows a quadratic dependence of the PL peak intensity on the power, confirming a biphotonic process of the two-photon pumping. The temperature dependence shows an enhancement of the nonlinear response at low temperatures. The activation energy is estimated and found to be 2.4 meV. The roles of the bound excitons in the observed PL are discussed briefly.

  13. Self-trapped excitonic green emission from layered semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2009-08-15

    Crystals of layered semiconductor are grown by Bridgman technique and are studied them under two-photon excitation by a Q-switched 20-ns pulse laser. The photoluminescence (PL) emission spectra of the crystals are measured at various pumping powers and temperatures. The PL spectra appear broad and structureless emissions with their peaks in the green spectral region. The characteristic emissions are from self-trapped excitons of the crystals. An analysis of the spectra measured at various pumping powers shows a quadratic dependence of the PL peak intensity on the power, confirming a biphotonic process of the two-photon pumping. The temperature dependence shows an enhancement of the nonlinear response at low temperatures. The activation energy is estimated and found to be 2.4 meV. The roles of the bound excitons in the observed PL are discussed briefly.

  14. Coherent laser beam combining

    CERN Document Server

    Brignon, Arnaud

    2013-01-01

    Recently, the improvement of diode pumping in solid state lasers and the development of double clad fiber lasers have allowed to maintain excellent laser beam quality with single mode fibers. However, the fiber output power if often limited below a power damage threshold. Coherent laser beam combining (CLBC) brings a solution to these limitations by identifying the most efficient architectures and allowing for excellent spectral and spatial quality. This knowledge will become critical for the design of the next generation high-power lasers and is of major interest to many industrial, environme

  15. The role of rare earths in narrow energy gap semiconductors

    International Nuclear Information System (INIS)

    Partin, D.L.; Heremans, J.; Morelli, D.T.; Thrush, C.M.

    1991-01-01

    Narrow energy band gap semiconductors are potentially useful for various devices, including infrared detectors and diode lasers. Rare earth elements have been introduced into lead chalcogenide semiconductors using the molecular beam epitaxy growth process. Europium and ytterbium increase the energy band gap, and nearly lattice-matched heterojunctions have been grown. In some cases, valence changes in the rare earth element cause doping of the alloy. In this paper some initial investigations of the addition of europium to indium antimonide are reported, including the variation of lattice parameter and optical transmission with composition and a negative magnetoresistance effect

  16. Electrokinetic pumps and actuators

    International Nuclear Information System (INIS)

    Phillip M. Paul

    2000-01-01

    Flow and ionic transport in porous media are central to electrokinetic pumping as well as to a host of other microfluidic devices. Electrokinetic pumping provides the ability to create high pressures (to over 10,000 psi) and high flow rates (over 1 mL/min) with a device having no moving parts and all liquid seals. The electrokinetic pump (EKP) is ideally suited for applications ranging from a high pressure integrated pump for chip-scale HPLC to a high flow rate integrated pump for forced liquid convection cooling of high-power electronics. Relations for flow rate and current fluxes in porous media are derived that provide a basis for analysis of complex microfluidic systems as well as for optimization of electrokinetic pumps

  17. Electrokinetic pumps and actuators

    Energy Technology Data Exchange (ETDEWEB)

    Phillip M. Paul

    2000-03-01

    Flow and ionic transport in porous media are central to electrokinetic pumping as well as to a host of other microfluidic devices. Electrokinetic pumping provides the ability to create high pressures (to over 10,000 psi) and high flow rates (over 1 mL/min) with a device having no moving parts and all liquid seals. The electrokinetic pump (EKP) is ideally suited for applications ranging from a high pressure integrated pump for chip-scale HPLC to a high flow rate integrated pump for forced liquid convection cooling of high-power electronics. Relations for flow rate and current fluxes in porous media are derived that provide a basis for analysis of complex microfluidic systems as well as for optimization of electrokinetic pumps.

  18. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  19. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  20. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  1. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  2. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  3. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  4. Solar pumped continuous wave carbon dioxide laser

    Science.gov (United States)

    Yesil, O.; Christiansen, W. H.

    1978-01-01

    In an effort to demonstrate the feasibility of a solar pumped laser concept, gain has been measured in a CO2-He laser medium optically pumped by blackbody radiation. Various gas mixtures of CO2 and He have been pumped by blackbody radiation emitted from an electrically heated oven. Using a CO2 laser as a probe, an optical gain coefficient of 1.8 x 10 to the -3rd/cm has been measured at 10.6 microns for a 9:1 CO2-He mixture at an oven temperature of about 1500 K, a gas temperature of about 400 K and a pressure of about 1 torr. This corresponds to a small signal gain coefficient when allowance is made for saturation effects due to the probe beam, in reasonable agreement with a theoretical value.

  5. Detection of pump degradation

    International Nuclear Information System (INIS)

    Greene, R.H.; Casada, D.A.; Ayers, C.W.

    1995-08-01

    This Phase II Nuclear Plant Aging Research study examines the methods of detecting pump degradation that are currently employed in domestic and overseas nuclear facilities. This report evaluates the criteria mandated by required pump testing at U.S. nuclear power plants and compares them to those features characteristic of state-of-the-art diagnostic programs and practices currently implemented by other major industries. Since the working condition of the pump driver is crucial to pump operability, a brief review of new applications of motor diagnostics is provided that highlights recent developments in this technology. The routine collection and analysis of spectral data is superior to all other technologies in its ability to accurately detect numerous types and causes of pump degradation. Existing ASME Code testing criteria do not require the evaluation of pump vibration spectra but instead overall vibration amplitude. The mechanical information discernible from vibration amplitude analysis is limited, and several cases of pump failure were not detected in their early stages by vibration monitoring. Since spectral analysis can provide a wealth of pertinent information concerning the mechanical condition of rotating machinery, its incorporation into ASME testing criteria could merit a relaxation in the monthly-to-quarterly testing schedules that seek to verify and assure pump operability. Pump drivers are not included in the current battery of testing. Operational problems thought to be caused by pump degradation were found to be the result of motor degradation. Recent advances in nonintrusive monitoring techniques have made motor diagnostics a viable technology for assessing motor operability. Motor current/power analysis can detect rotor bar degradation and ascertain ranges of hydraulically unstable operation for a particular pump and motor set. The concept of using motor current or power fluctuations as an indicator of pump hydraulic load stability is presented

  6. Detection of pump degradation

    Energy Technology Data Exchange (ETDEWEB)

    Greene, R.H.; Casada, D.A.; Ayers, C.W. [and others

    1995-08-01

    This Phase II Nuclear Plant Aging Research study examines the methods of detecting pump degradation that are currently employed in domestic and overseas nuclear facilities. This report evaluates the criteria mandated by required pump testing at U.S. nuclear power plants and compares them to those features characteristic of state-of-the-art diagnostic programs and practices currently implemented by other major industries. Since the working condition of the pump driver is crucial to pump operability, a brief review of new applications of motor diagnostics is provided that highlights recent developments in this technology. The routine collection and analysis of spectral data is superior to all other technologies in its ability to accurately detect numerous types and causes of pump degradation. Existing ASME Code testing criteria do not require the evaluation of pump vibration spectra but instead overall vibration amplitude. The mechanical information discernible from vibration amplitude analysis is limited, and several cases of pump failure were not detected in their early stages by vibration monitoring. Since spectral analysis can provide a wealth of pertinent information concerning the mechanical condition of rotating machinery, its incorporation into ASME testing criteria could merit a relaxation in the monthly-to-quarterly testing schedules that seek to verify and assure pump operability. Pump drivers are not included in the current battery of testing. Operational problems thought to be caused by pump degradation were found to be the result of motor degradation. Recent advances in nonintrusive monitoring techniques have made motor diagnostics a viable technology for assessing motor operability. Motor current/power analysis can detect rotor bar degradation and ascertain ranges of hydraulically unstable operation for a particular pump and motor set. The concept of using motor current or power fluctuations as an indicator of pump hydraulic load stability is presented.

  7. Development of high current electron beam generator

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook [and others

    1997-05-01

    A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs.

  8. Development of high current electron beam generator

    International Nuclear Information System (INIS)

    Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook

    1997-05-01

    A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs

  9. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  11. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  12. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  13. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  15. Efficient semiconductor multicycle terahertz pulse source

    Science.gov (United States)

    Nugraha, P. S.; Krizsán, G.; Polónyi, Gy; Mechler, M. I.; Hebling, J.; Tóth, Gy; Fülöp, J. A.

    2018-05-01

    Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons.

  16. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  17. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  18. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  19. Thermomechanical piston pump development

    Science.gov (United States)

    Sabelman, E. E.

    1971-01-01

    A thermally powered reciprocating pump has been devised to replace or augment an electric pump for the transport of temperature-control fluid on the Thermoelectric Outer Planet Spacecraft (TOPS). The thermally powered pump operates cyclically by extracting heat energy from the fluid by means of a vapor-pressure expansion system and by using the heat to perform the mechanical work of pumping. A feasibility test unit has been constructed to provide an output of 7 cu in during a 10- to 100-second cycle. It operates with a fluid input temperature of 200 to 300 F and a heat sink temperature of 0 to 30 F.

  20. Pumps for nuclear industry

    International Nuclear Information System (INIS)

    Tanguy, L.

    1978-01-01

    In order to meet the requirements of nuclear industry for the transfer of corrosive, toxic, humidity sensitive or very pure gases, different types of pumps were developped and commercialized. Their main characteristics are to prevent pollution of the transfered fluid by avoiding any contact between this fluid and the lubricated parts of the machine, and to prevent a contamination of the atmosphere or of the fluid by a total tightness. Patellar pumps have been particularly developped because the metallic bellows are quite reliable and resistant in this configuration. Two types are described: patellar pumps without friction and barrel pumps whose pistons are provided with rings sliding in the cylinders without lubrication [fr

  1. Pump safety device

    International Nuclear Information System (INIS)

    Timmermans, Francis; Vandervorst, Jean.

    1981-01-01

    Safety device for longitudinally leak proofing the shaft of a pump in the event of the fracture of the dynamic seal separating the pump fluid high pressure chamber from the low pressure chamber. It is designed for fitting to the primary pumps of nuclear reactors. It includes a hollow cyclindrical piston located coaxially around the pump shaft and normally housed in a chamber provided for this purpose in the fixed housing of the dynamic seal, and means for moving this piston coaxially so as to compress a safety O ring between the shaft and the piston in the event of the dynamic seal failing [fr

  2. Optically pumped atoms

    CERN Document Server

    Happer, William; Walker, Thad

    2010-01-01

    Covering the most important knowledge on optical pumping of atoms, this ready reference is backed by numerous examples of modelling computation for optical pumped systems. The authors show for the first time that modern scientific computing software makes it practical to analyze the full, multilevel system of optically pumped atoms. To make the discussion less abstract, the authors have illustrated key points with sections of MATLAB codes. To make most effective use of contemporary mathematical software, it is especially useful to analyze optical pumping situations in the Liouville spa

  3. Detection of pump degradation

    International Nuclear Information System (INIS)

    Casada, D.

    1995-01-01

    There are a variety of stressors that can affect the operation of centrifugal pumps. Although these general stressors are active in essentially all centrifugal pumps, the stressor level and the extent of wear and degradation can vary greatly. Parameters that affect the extent of stressor activity are manifold. In order to assure the long-term operational readiness of a pump, it is important to both understand the nature and magnitude of the specific degradation mechanisms and to monitor the performance of the pump. The most commonly applied method of monitoring the condition of not only pumps, but rotating machinery in general, is vibration analysis. Periodic or continuous special vibration analysis is a cornerstone of most pump monitoring programs. In the nuclear industry, non-spectral vibration monitoring of safety-related pumps is performed in accordance with the ASME code. Pump head and flow rate are also monitored, per code requirements. Although vibration analysis has dominated the condition monitoring field for many years, there are other measures that have been historically used to help understand pump condition; advances in historically applied technologies and developing technologies offer improved monitoring capabilities. The capabilities of several technologies (including vibration analysis, dynamic pressure analysis, and motor power analysis) to detect the presence and magnitude of both stressors and resultant degradation are discussed

  4. Champagne Heat Pump

    Science.gov (United States)

    Jones, Jack A.

    2004-01-01

    The term champagne heat pump denotes a developmental heat pump that exploits a cycle of absorption and desorption of carbon dioxide in an alcohol or other organic liquid. Whereas most heat pumps in common use in the United States are energized by mechanical compression, the champagne heat pump is energized by heating. The concept of heat pumps based on other absorption cycles energized by heat has been understood for years, but some of these heat pumps are outlawed in many areas because of the potential hazards posed by leakage of working fluids. For example, in the case of the water/ammonia cycle, there are potential hazards of toxicity and flammability. The organic-liquid/carbon dioxide absorption/desorption cycle of the champagne heat pump is similar to the water/ammonia cycle, but carbon dioxide is nontoxic and environmentally benign, and one can choose an alcohol or other organic liquid that is also relatively nontoxic and environmentally benign. Two candidate nonalcohol organic liquids are isobutyl acetate and amyl acetate. Although alcohols and many other organic liquids are flammable, they present little or no flammability hazard in the champagne heat pump because only the nonflammable carbon dioxide component of the refrigerant mixture is circulated to the evaporator and condenser heat exchangers, which are the only components of the heat pump in direct contact with air in habitable spaces.

  5. Beam-beam phenomenology

    International Nuclear Information System (INIS)

    Teng, L.C.

    1980-01-01

    In colliding beam storage rings the beam collision regions are generally so short that the beam-beam interaction can be considered as a series of evenly spaced non-linear kicks superimposed on otherwise stable linear oscillations. Most of the numerical studies on computers were carried out in just this manner. But for some reason this model has not been extensively employed in analytical studies. This is perhaps because all analytical work has so far been done by mathematicians pursuing general transcendental features of non-linear mechanics for whom this specific model of the specific system of colliding beams is too parochial and too repugnantly physical. Be that as it may, this model is of direct interest to accelerator physicists and is amenable to (1) further simplification, (2) physical approximation, and (3) solution by analogy to known phenomena

  6. Performance test of a ceramic turbo-viscous pump

    International Nuclear Information System (INIS)

    Abe, Tetsuya; Hiroki, Seiji; Murakami, Yoshio; Shiraishi, Shigeyuki; Totoura, Sadayuki; Ohtaki, Takashi.

    1994-01-01

    In the special fields of nuclear fusion facilities and semiconductor production installation, the development of new vacuum pumps which can cope with strong magnetic fields, high temperature gas and corrosive gas is demanded. Mitsubishi Heavy Industries Ltd. has advanced the development of ceramic turbo-molecular pumps and ceramic turbo-viscous pumps, which use ceramic rotors and gas bearings since 1985. The evaluation test of the ceramic turbo-viscous vacuum pump CT-3000H which can evacuate from atmospheric pressure to high vacuum with one pump was carried out, and the experimental results on the performance and the reliability were obtained, therefore, those are reported in this paper. The structure, specification and features of the CT-3000H are shown. The exhaust performance test of the pump was carried out in conformity with the standard of the Vacuum Society of Japan, JVIS 005 'Method of performance test for turbo-molecular pumps'. The gases used were nitrogen and helium. The results are shown. The exhaust test from atmospheric pressure was carried out by two methods, and the results are shown. (K.I.)

  7. Polarization-dependent solitons in the strong coupling regime of semiconductor microcavities

    International Nuclear Information System (INIS)

    Fu, Y.; Zhang, W.L.; Wu, X.M.

    2015-01-01

    This paper studies the influence of polarization on formation of vectorial polariton soliton in semiconductor microcavities through numerical simulations. It is found that the polariton solution greatly depends on the polarization of both the pump and exciting fields. By properly choosing the pump and exciting field polarization, bright–bright or bright–dark vectorial polariton solitons can be formed. Especially, when the input conditions of pump or exciting field of the two opposite polarizations are slightly asymmetric, an interesting phenomenon that the dark solitons transform into bright solitons occurs in the branch of soliton solutions.

  8. A recycling molecular beam reactor

    International Nuclear Information System (INIS)

    Prada-Silva, G.; Haller, G.L.; Fenn, J.B.

    1974-01-01

    In a Recycling Molecular Beam Reactor, RMBR, a beam of reactant gas molecules is formed from a supersonic free jet. After collision with a target the molecules pass through the vacuum pumps and are returned to the nozzle source. Continuous recycling permits the integration of very small reaction probabilities into measurable conversions which can be analyzed by gas chromatography. Some preliminary experiments have been carried out on the isomerization of cyclopropane

  9. A specialized bioengineering ion beam line

    International Nuclear Information System (INIS)

    Yu, L.D.; Sangyuenyongpipat, S.; Sriprom, C.; Thongleurm, C.; Suwanksum, R.; Tondee, N.; Prakrajang, K.; Vilaithong, T.; Brown, I.G.; Wiedemann, H.

    2007-01-01

    A specialized bioengineering ion beam line has recently been completed at Chiang Mai University to meet rapidly growing needs of research and application development in low-energy ion beam biotechnology. This beam line possesses special features: vertical main beam line, low-energy (30 keV) ion beams, double swerve of the beam, a fast pumped target chamber, and an in-situ atomic force microscope (AFM) system chamber. The whole beam line is situated in a bioclean environment, occupying two stories. The quality of the ion beam has been studied. It has proved that this beam line has significantly contributed to our research work on low-energy ion beam biotechnology

  10. Performance of Wind Pump Prototype

    African Journals Online (AJOL)

    Mulu

    Mekelle University, Mekelle, Ethiopia (*mul_at@yahoo.com). ABSTRACT. A wind ... balanced rotor power and reciprocating pump, hence did not consider the effect of pump size. ... Keywords: Wind pump, Windmill, Performance testing, Pump efficiency, Pump discharge, ... Unfortunately, in rural places, where the houses are.

  11. Detection of pump degradation

    International Nuclear Information System (INIS)

    Casada, D.

    1994-01-01

    There are a variety of stressors that can affect the operation of centrifugal pumps. Although these general stressors are active in essentially all centrifugal pumps, the stressor level and the extent of wear and degradation can vary greatly. Parameters that affect the extent of stressor activity are manifold. In order to assure the long-term operational readiness of a pump, it is important to both understand the nature and magnitude of the specific degradation mechanisms and to monitor the performance of the pump. The most commonly applied method of monitoring the condition of not only pumps, but rotating machinery in general, is vibration analysis. Periodic or continuous spectral vibration analysis is a cornerstone of most pump monitoring programs. In the nuclear industry, non-spectral vibration monitoring of safety-related pumps is performed in accordance with the ASME code. Although vibration analysis has dominated the condition monitoring field for many years, there are other measures that have been historically used to help understand pump condition: advances in historically applied technologies and developing technologies offer improved monitoring capabilities. The capabilities of several technologies (including vibration analysis, dynamic pressure analysis, and motor power analysis) to detect the presence and magnitude of both stressors and resultant degradation are discussed

  12. Method and system for homogenizing diode laser pump arrays

    Science.gov (United States)

    Bayramian, Andy J

    2013-10-01

    An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

  13. Normetex Pump Alternatives Study

    International Nuclear Information System (INIS)

    Clark, Elliot A.

    2013-01-01

    A mainstay pump for tritium systems, the Normetex scroll pump, is currently unavailable because the Normetex company went out of business. This pump was an all-metal scroll pump that served tritium processing facilities very well. Current tritium system operators are evaluating replacement pumps for the Normetex pump and for general used in tritium service. An all-metal equivalent alternative to the Normetex pump has not yet been identified. 1. The ideal replacement tritium pump would be hermetically sealed and contain no polymer components or oils. Polymers and oils degrade over time when they contact ionizing radiation. 2. Halogenated polymers (containing fluorine, chlorine, or both) and oils are commonly found in pumps. These materials have many properties that surpass those of hydrocarbon-based polymers and oils, including thermal stability (higher operating temperature) and better chemical resistance. Unfortunately, they are less resistant to degradation from ionizing radiation than hydrocarbon-based materials (in general). 3. Polymers and oils can form gaseous, condensable (HF, TF), liquid, and solid species when exposed to ionizing radiation. For example, halogenated polymers form HF and HCl, which are extremely corrosive upon reaction with water. If a pump containing polymers or oils must be used in a tritium system, the system must be designed to be able to process the unwanted by-products. Design features to mitigate degradation products include filters and chemical or physical traps (eg. cold traps, oil traps). 4. Polymer components can work in tritium systems, but must be replaced regularly. Polymer components performance should be monitored or be regularly tested, and regular replacement of components should be viewed as an expected normal event. A radioactive waste stream must be established to dispose of used polymer components and oil with an approved disposal plan developed based on the facility location and its regulators. Polymers have varying

  14. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  15. Circulation pump mounting

    International Nuclear Information System (INIS)

    Skalicky, A.

    1976-01-01

    The suspension is described of nuclear reactor circulating pumps enabling their dilatation with a minimum reverse force consisting of spacing rods supported with one end in the anchor joints and provided with springs and screw joints engaging the circulating pump shoes. The spacing rods are equipped with side vibration dampers anchored in the shaft side wall and on the body of the circulating pump drive body. The negative reverse force F of the spacing rods is given by the relation F=Q/l.y, where Q is the weight of the circulating pump, l is the spatial distance between the shoe joints and anchor joints, and y is the deflection of the circulating pump vertical axis from the mean equilibrium position. The described suspension is advantageous in that that the reverse force for the deflection from the mean equilibrium position is minimal, dynamic behaviour is better, and construction costs are lower compared to suspension design used so far. (J.B.)

  16. Pump depletion effects in thermal degenerate four-wave mixing

    International Nuclear Information System (INIS)

    Guha, S.; Chen, W.

    1987-01-01

    Characteristics such as a large magnitude of nonlinearity, fast response, broadband operation, and easy availability make absorbing liquids attractive candidates for performing phase conjugation of optical beams by degenerate four-wave mixing. The coupled-wave equations describing the interaction of four optical fields in an absorbing medium have been solved previously for the case of no pump depletion and no self-action of any of the beams. When studying phase conjugation oscillation, however, the effect of depletion of the pump beams on the phase conjugate reflectivity must be considered. Moreover, in absorbing media the self-action effects are always present. The coupled-wave equations, including the self-action terms for all four waves involved, are derived here for the first time to the authors' knowledge. For the case of small absorption, these equations are solved analytically, and the effect of pump depletion on phase conjugate reflectivity R is determined. In the absence of the pump depletion, R is proportional to tan 2 (Ql), where Ql is a dimensionless gain parameter characterizing the nonlinear medium and the input pump power. When pump depletion and self-action are included, R does not go to infinity when Ql equals odd multiples of π2. Instead R takes on values dependent on the probe ratio q 1 , which is the ratio of the input probe irradiance to the input pump irradiance. The authors find that the maximum value for R is 1q 1 . They also find that for Ql close to odd multiples of π2, the reflectivity is significantly reduced from the value obtained by ignoring pump depletion, even for probe ratios as small as one-tenth of 1%. Experimental confirmation of this theory, using an argon-ion laser as the pump and carbon tetrachloride mixed with a dye as the absorbing medium, is in progress and is reported

  17. BWR series pump recirculation system

    International Nuclear Information System (INIS)

    Dillmann, C.W.

    1992-01-01

    This patent describes a recirculation system for driving reactor coolant water contained in an annular downcomer defined between a boiling water reactor vessel and a reactor core spaced radially inwardly therefrom. It comprises a plurality of circumferentially spaced second pumps disposed in the downcomer, each including an inlet for receiving from the downcomer a portion of the coolant water as pump inlet flow, and an outlet for discharging the pump inlet flow pressurized in the second pump as pump outlet flow; and means for increasing pressure of the pump inlet flow at the pump inlet including a first pump disposed in series flow with the second pump for first receiving the pump inlet flow from the downcomer and discharging to the second pump inlet flow pressurized in the first pump

  18. High pressure liquid gas pump

    Science.gov (United States)

    Acres, R. L.

    1972-01-01

    Design and development of two types of pumps for handling liquefied gases are discussed. One pump uses mechanical valve shift and other uses pneumatic valve shift. Illustrations of pumps are provided and detailed description of operation is included.

  19. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  20. High brightness diode-pumped organic solid-state laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhuang; Mhibik, Oussama; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien, E-mail: sebastien.forget@univ-paris13.fr [Université Paris 13, Sorbonne Paris Cité, Laboratoire de Physique des Lasers, F-93430, Villetaneuse (France); CNRS, UMR 7538, LPL, F-93430, Villetaneuse (France)

    2015-02-02

    High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

  1. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  2. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  3. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  4. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  5. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  6. Advanced solar energy conversion. [solar pumped gas lasers

    Science.gov (United States)

    Lee, J. H.

    1981-01-01

    An atomic iodine laser, a candidate for the direct solar pumped lasers, was successfully excited with a 4 kW beam from a xenon arc solar simulator, thus proving the feasibility of the concept. The experimental set up and the laser output as functions of operating conditions are presented. The preliminary results of the iodine laser amplifier pumped with the HCP array to which a Q switch for giant pulse production was coupled are included. Two invention disclosures - a laser driven magnetohydrodynamic generator for conversion of laser energy to electricity and solar pumped gas lasers - are also included.

  7. Pumping machinery theory and practice

    CERN Document Server

    Badr, Hassan M

    2014-01-01

    Pumping Machinery Theory and Practice comprehensively covers the theoretical foundation and applications of pumping machinery. Key features: Covers characteristics of centrifugal pumps, axial flow pumps and displacement pumpsConsiders pumping machinery performance and operational-type problemsCovers advanced topics in pumping machinery including multiphase flow principles, and two and three-phase flow pumping systemsCovers different methods of flow rate control and relevance to machine efficiency and energy consumptionCovers different methods of flow rate control and relevance to machine effi

  8. Imaging the motion of electrons in 2D semiconductor heterostructures

    Science.gov (United States)

    Dani, Keshav

    Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

  9. A dual-optically-pumped polarized negative deuterium ion source

    International Nuclear Information System (INIS)

    Kinsho, M.; Mori, Y.; Ikegami, K.; Takagi, A.

    1994-01-01

    An optically pumped polarized H - source (OPPIS), which is based on the charge exchange between H + ions and electron-spin-polarized alkali atoms has been developed at KEK. Just by applying this scheme to a deuteron beam, it is difficult to obtain a highly vector polarized deuteron beam. To obtain highly vector polarized D - ions, we have developed a 'dual optical pumping type' of polarized D - source. With this scheme, a 100% vector nuclear-spin polarization for D - ions is possible in principle. In a preliminary experiment, a 60% of vector nuclear-spin polarized D - ions was obtained. (author)

  10. Ionization annealing of semiconductor crystals. Part two: the experiment

    Directory of Open Access Journals (Sweden)

    Garkavenko A. S.

    2014-12-01

    Full Text Available There is a conception that irradiation of semiconductor crystals with high energy electrons (300 keV results in a significant and irreversible deterioration of their electrical, optical and structural properties. Semiconductors are typically irradiated by low voltage electron accelerators with a continuous flow, the current density in such accelerators is 10–5—10–6 A/cm2, the energy — 0,3—1 MeV. All changes in the properties after such irradiation are resistant at room temperature, and marked properties recovery to baseline values is observed only after prolonged heating of the crystals to a high temperature. In contrast, the authors in their studies observe an improvement of the structural properties of semiconductor crystals (annealing of defects under irradiation with powerful (high current pulsed electron beams of high energy (E0 = 0,3–1 MeV, t = 0,1—10 ns, Ω = 1—10 Hz, j = 20—300 A/cm2. In their previous paper, the authors presented theoretical basis of this effect. This article describes an experimental study on the influence of high-current pulsed electron beams on the optical homogeneity of semiconductor GaAs and CdS crystals, confirming the theory put forward earlier.

  11. Particle removal with pump limiters in ISX-B

    International Nuclear Information System (INIS)

    Mioduszewski, P.; Emerson, L.C.; Simpkins, J.E.

    1983-01-01

    First pump limiter experiments were performed on ISX-B. Two pump limiter modules were installed in the top and bottom of one toroidal sector of the tokamak. The modules consist of inertia cooled, TiC coated graphite heads and Zr-Al getter pumps each with a pumping speed of 1000 to 2000 l/s. The objective of the initial experiments was the demonstration of plasma particle control with pump limiters. The first set of experiments were performed in ohmic discharges (OH) in which the effect of the pump limiters on the plasma density was clearly demonstrated. In discharges characterized by: I/sub p/ = 110 kA, B/sub T/ = 15 kG, anti n/sub e/ = 1 - 5 x 10 13 cm -3 and t = 0.3 s the pressure rise in the pump limiters was typically 2 mTorr with the pumps off and 0.7 mTorr after activating the pumps. When the pumps were activated, the line-average plasma density decreased by up to a factor 2 at identical gas flow rates. The second set of measurements were performed in neutral beam heated discharges (NBI) with injected powers between 0.6 MW and 1.0 MW. Due to a cooling problem on one of the Zr-Al pumps the NBI experiments were carried out with one limiter only. The maximum pressure observed in NBI-discharges was 5 mTorr without activating the pumps, i.e., approximately twice as high as in OH-discharges. The exhaust efficiency, which is defined as the removed particle flux over the total particle flux in the scrape-off layer is estimated to be 5%

  12. Application of positron annihilation techniques for semiconductor studies

    International Nuclear Information System (INIS)

    Karwasz, G.P.; Zecca, A.; Brusa, R.S.; Pliszka, D.

    2004-01-01

    Positron annihilation techniques, being non-destructive, allowing depth profiling down to a few micrometers and detecting open-volume defects (vacancies, dislocations etc.) at single ppm concentrations constitute a valuable and complementary method, compared to other solid-state-physics studies. We give examples of investigation in the field of semiconductors with different techniques, both with and without use of positron low-energy beams. The Doppler broadening of the 511 keV annihilation line method and the slow positron beam were used to study helium-implanted silicon and the surface reduction processes in semiconducting glasses. The positron lifetime technique and coincidence spectra of the Doppler broadening were used for systematic studies of metals and semiconductors. Doppler-coincidence method was then used to identify the kinetics of oxygen precipitates in Czochralski-grown silicon

  13. Electromagnetic pump technology

    International Nuclear Information System (INIS)

    Prabhakar, R.

    1994-01-01

    Fast Breeder Reactors have an important role to play in our nuclear power programme. Liquid metal sodium is used as the coolant for removing fission heat generated in fast reactors and a distinctive physical property of sodium is its high electrical conductivity. This enables application of electromagnetic (EM) pumps, working on same principle as electric motors, for pumping liquid sodium. Due to its lower efficiency as compared to centrifugal pumps, use of EM pumps has been restricted to reactor auxiliary circuits and experimental facilities. As part of our efforts to manufacture fast reactor components indigenously, work on the development of two types of EM pumps namely flat linear induction pump (FLIP) and annular linear induction pump (ALIP) has been undertaken. Design procedures based on an equivalent circuit approach have been established and results from testing a 5.6 x 10E-3 Cum/s (20 Cum/h) FLIP in a sodium loop were used to validate the procedure. (author). 7 refs., 6 figs

  14. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  15. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-11-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

  16. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  17. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  18. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  19. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  20. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  1. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  2. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  3. Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

    Science.gov (United States)

    Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

    2012-08-28

    Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis.

  4. Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

    International Nuclear Information System (INIS)

    Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

    2009-01-01

    A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

  5. Three-beam double stimulated Raman scatterings: Cascading configuration

    Science.gov (United States)

    Rao, B. Jayachander; Cho, Minhaeng

    2018-03-01

    Two-beam stimulated Raman scattering (SRS) has been used in diverse label-free spectroscopy and imaging applications of live cells, biological tissues, and functional materials. Recently, we developed a theoretical framework for the three-beam double SRS processes that involve pump, Stokes, and depletion beams, where the pump-Stokes and pump-depletion SRS processes compete with each other. It was shown that the net Stokes gain signal can be suppressed by increasing the depletion beam intensity. The theoretical prediction has been experimentally confirmed recently. In the previous scheme for a selective suppression of one SRS by making it compete with another SRS, the two SRS processes occur in a parallel manner. However, there is another possibility of three-beam double SRS scheme that can be of use to suppress either Raman gain of the Stokes beam or Raman loss of the pump beam by depleting the Stokes photons with yet another SRS process induced by the pair of Stokes and another (second) Stokes beam. This three-beam double SRS process resembles a cascading energy transfer process from the pump beam to the first Stokes beam (SRS-1) and subsequently from the first Stokes beam to the second Stokes beam (SRS-2). Here, the two stimulated Raman gain-loss processes are associated with two different Raman-active vibrational modes of solute molecule. In the present theory, both the radiation and the molecules are treated quantum mechanically. We then show that the cascading-type three-beam double SRS can be described by coupled differential equations for the photon numbers of the pump and Stokes beams. From the approximate solutions as well as exact numerical calculation results for the coupled differential equations, a possibility of efficiently suppressing the stimulated Raman loss of the pump beam by increasing the second Stokes beam intensity is shown and discussed. To further prove a potential use of this scheme for developing a super-resolution SRS microscopy, we

  6. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  7. Nonlinear diffraction from a virtual beam

    DEFF Research Database (Denmark)

    Saltiel, Solomon M.; Neshev, Dragomir N.; Krolikowski, Wieslaw

    2010-01-01

    We observe experimentally a novel type of nonlinear diffraction in the process of two-wave mixing on a nonlinear quadratic grating.We demonstrate that when the nonlinear grating is illuminated simultaneously by two noncollinear beams, a second-harmonic diffraction pattern is generated by a virtual...... beam propagating along the bisector of the two pump beams. The observed iffraction phenomena is a purely nonlinear effect that has no analogue in linear diffraction...

  8. Growth and characterization of ZnCdMgSe-based green light emitters and distributed Bragg reflectors towards II-VI based semiconductor disk lasers

    International Nuclear Information System (INIS)

    De Jesus, Joel; Gayen, Swapan K.; Garcia, Thor A.; Tamargo, Maria C.; Kartazaev, Vladimir; Jones, Brynmor E.; Schlosser, Peter J.; Hastie, Jennifer E.

    2015-01-01

    We report the structural and optical properties of molecular beam epitaxy grown II-VI semiconductor multiple quantum well (MQW) structures and distributed Bragg reflector (DBR) on InP substrates for application in developing optically-pumped semiconductor disk lasers (SDLs) operating in the green spectral range. One sample was grown directly on an InP substrate with an InGaAs buffer layer, while another had a 5-period ZnCdMgSe-based DBR grown on the InGaAs/InP substrate. X-ray diffraction and scanning electron microscopy measurements revealed sharp superlattice peaks and abrupt layer interfaces, while steady-state photoluminescence measurements demonstrated surface emission between 540-570 nm. Under pulsed excitation both samples exhibited features of amplified spontaneous emission (ASE) or stimulated emission, accompanied by luminescence lifetime shortening. The sample with the DBR showed higher surface luminescence and the onset of ASE at lower pump power. To further explore the design and performance of a ZnCdMgSe-based DBR, a 20-period DBR was grown and a reflectivity of 83% was obtained at ∝560 nm. We estimate that a DBR with ∝40 periods would be needed for optimal performance in a SDL using these materials. These results show the potential of II-VI MQW structures on InP substrates for the development of SDLs operational in the green-yellow wavelength range. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Measurements of a prototype synchrotron radiation pumped absorber for future light sources

    International Nuclear Information System (INIS)

    Chou, T.S.; Foerster, C.L.; Halama, H.; Lanni, C.

    1988-01-01

    In the new generation of advanced synchrotron light sources, the conventional concept of distributed pumping is no longer suitable for removing the gas load caused by photon stimulated desorption (PSD). A new concept using a combination of photon absorber and pumping station has been designed, constructed, and installed in the U1OB beam line at the VUV ring of the National Synchrotron Light Source. The system consists of an electrically insulated water cooled copper block, a titanium sublimation pump, calibrated BA gauges, a calibrated RGA, and a known conductance. A photon beam 10 milliradian wide and 3.26 milliradian high, having critical energy of 500 eV, is directed on the absorber. PSD yield is studied as a function of total beam dose and absorber surface preparation. The results from this experiment, pump characteristics, design of an absorber pump for future light sources, and the pressure improvement factors will be presented. 5 refs., 7 figs., 1 tab

  10. Electron Beam Diagnostics in Plasmas Based on Electron Beam Ionization

    Science.gov (United States)

    Leonhardt, Darrin; Leal-Quiros, Edbertho; Blackwell, David; Walton, Scott; Murphy, Donald; Fernsler, Richard; Meger, Robert

    2001-10-01

    Over the last few years, electron beam ionization has been shown to be a viable generator of high density plasmas with numerous applications in materials modification. To better understand these plasmas, we have fielded electron beam diagnostics to more clearly understand the propagation of the beam as it travels through the background gas and creates the plasma. These diagnostics vary greatly in sophistication, ranging from differentially pumped systems with energy selective elements to metal 'hockey pucks' covered with thin layers of insulation to electrically isolate the detector from the plasma but pass high energy beam electrons. Most importantly, absolute measurements of spatially resolved beam current densities are measured in a variety of pulsed and continuous beam sources. The energy distribution of the beam current(s) will be further discussed, through experiments incorporating various energy resolving elements such as simple grids and more sophisticated cylindrical lens geometries. The results are compared with other experiments of high energy electron beams through gases and appropriate disparities and caveats will be discussed. Finally, plasma parameters are correlated to the measured beam parameters for a more global picture of electron beam produced plasmas.

  11. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

    International Nuclear Information System (INIS)

    Kozlov, V.A.; Kozlovski, V.V.

    2001-01-01

    One of the modern methods for modifying semiconductors using beams of protons and alpha particles is analyzed; this modification is accomplished by the controlled introduction of radiation defects into the semiconductor. It is shown that doping semiconductors with radiation defects produced by irradiation with light ions opens up fresh opportunities for controlling the properties of semiconducting materials and for the development of new devices designed for optoelectronics, microelectronics, and nanoelectronics based on these materials; these devices differ favorably from those obtained by conventional doping methods, i.e., by diffusion, epitaxy, and ion implantation

  12. Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

    International Nuclear Information System (INIS)

    Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

    2009-01-01

    An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

  13. Absorption heat pumps

    International Nuclear Information System (INIS)

    Formigoni, C.

    1998-01-01

    A brief description of the difference between a compression and an absorption heat pump is made, and the reasons why absorption systems have spread lately are given. Studies and projects recently started in the field of absorption heat pumps, as well as criteria usually followed in project development are described. An outline (performance targets, basic components) of a project on a water/air absorption heat pump, running on natural gas or LPG, is given. The project was developed by the Robur Group as an evolution of a water absorption refrigerator operating with a water/ammonia solution, which has been on the market for a long time and recently innovated. Finally, a list of the main energy and cost advantages deriving from the use of absorption heat pumps is made [it

  14. Nuclear-pumped lasers

    CERN Document Server

    Prelas, Mark

    2016-01-01

    This book focuses on Nuclear-Pumped Laser (NPL) technology and provides the reader with a fundamental understanding of NPLs, a review of research in the field, and exploration of large scale NPL system design and applications. Early chapters look at the fundamental properties of lasers, nuclear-pumping and nuclear reactions that may be used as drivers for nuclear-pumped lasers. The book goes on to explore the efficient transport of energy from the ionizing radiation to the laser medium and then the operational characteristics of existing nuclear-pumped lasers. Models based on Mathematica, explanations and a tutorial all assist the reader’s understanding of this technology. Later chapters consider the integration of the various systems involved in NPLs and the ways in which they can be used, including beyond the military agenda. As readers will discover, there are significant humanitarian applications for high energy/power lasers, such as deflecting asteroids, space propulsion, power transmission and mining....

  15. Gas fired heat pumps

    International Nuclear Information System (INIS)

    Seifert, M.

    2006-01-01

    The condensing gas boiler is now state of the art and there is no more room for improvement in performance, technically speaking. The next logical step to improve the overall efficiency is to exploit ambient heat in combination with the primary source of energy, natural gas. That means using natural-gas driven heat pumps and gas-fired heat pumps. Based on this, the Swiss Gas Industry decided to set up a practical test programme enjoying a high priority. The aim of the project 'Gas-fired heat pump practical test' is to assess by field tests the characteristics and performance of the foreign serial heat pumps currently on the market and to prepare and promote the introduction on the market place of this sustainable natural-gas technology. (author)

  16. Absorption heat pump system

    Science.gov (United States)

    Grossman, G.

    1982-06-16

    The efficiency of an absorption heat pump system is improved by conducting liquid from a second stage evaporator thereof to an auxiliary heat exchanger positioned downstream of a primary heat exchanger in the desorber of the system.

  17. Regenerative Hydride Heat Pump

    Science.gov (United States)

    Jones, Jack A.

    1992-01-01

    Hydride heat pump features regenerative heating and single circulation loop. Counterflow heat exchangers accommodate different temperatures of FeTi and LaNi4.7Al0.3 subloops. Heating scheme increases efficiency.

  18. Pressurized Vessel Slurry Pumping

    International Nuclear Information System (INIS)

    Pound, C.R.

    2001-01-01

    This report summarizes testing of an alternate ''pressurized vessel slurry pumping'' apparatus. The principle is similar to rural domestic water systems and ''acid eggs'' used in chemical laboratories in that material is extruded by displacement with compressed air

  19. Mechanical vaccum pumps

    CERN Document Server

    Chew, A D

    2007-01-01

    This presentation gives an overview of the technology of contemporary primary and secondary mechanical vacuum pumps. For reference a brief history of vacuum and a summary of important and basic vacuum concepts are first presented.

  20. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

    2014-01-01

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  1. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  2. GAS METERING PUMP

    Science.gov (United States)

    George, C.M.

    1957-12-31

    A liquid piston gas pump is described, capable of pumping minute amounts of gas in accurately measurable quantities. The pump consists of a flanged cylindrical regulating chamber and a mercury filled bellows. Sealed to the ABSTRACTS regulating chamber is a value and having a gas inlet and outlet, the inlet being connected by a helical channel to the bellows. A gravity check valve is in the gas outlet, so the gas passes through the inlet and the helical channel to the bellows where the pumping action as well as the metering is accomplished by the actuation of the mercury filled bellows. The gas then flows through the check valve and outlet to any associated apparatus.

  3. JET pump limiter

    International Nuclear Information System (INIS)

    Sonnenberg, K.; Deksnis, E.; Shaw, R.; Reiter, D.

    1988-01-01

    JET plans to install two pump limiter modules which can be used for belt-limiter, inner-wall and X-point discharges and, also, for 1-2s as the main limiter. A design is presented which is compatible with two diagnostic systems, and which allows partial removal of the pump limiter to provide access for remote-handling operations. The high heat-flux components are initially cooled during a pulse. Heat is removed between discharges by radiation and pressure contacts to a water-cooled support structure. The pumping edge will be made of annealed pyrolytic graphite. Exhaust efficiency has been estimated, for a 1-d edge model, using a Monte-Carlo calculation of neutral gas transport. When the pump limiter is operated together with other wall components we expect an efficiency of ≅ 5% (2.5 x 10 21 part/s). As a main limiter the efficiency increases to about 10%. (author)

  4. Types of Breast Pumps

    Science.gov (United States)

    ... called a bicycle horn pump, consists of a hollow rubber ball attached to a breast-shield. Some ... and Drug Administration 10903 New Hampshire Avenue Silver Spring, MD 20993 1-888-INFO-FDA (1-888- ...

  5. Optically pumped laser systems

    International Nuclear Information System (INIS)

    DeMaria, A.J.; Mack, M.E.

    1975-01-01

    Laser systems which are pumped by an electric discharge formed in a gas are disclosed. The discharge is in the form of a vortex stabilized electric arc which is triggered with an auxiliary energy source. At high enough repetition rates residual ionization between successive pulses contributes to the pulse stabilization. The arc and the gain medium are positioned inside an optical pumping cavity where light from the arc is coupled directly into the gain medium

  6. Lunar Base Heat Pump

    Science.gov (United States)

    Walker, D.; Fischbach, D.; Tetreault, R.

    1996-01-01

    The objective of this project was to investigate the feasibility of constructing a heat pump suitable for use as a heat rejection device in applications such as a lunar base. In this situation, direct heat rejection through the use of radiators is not possible at a temperature suitable for lde support systems. Initial analysis of a heat pump of this type called for a temperature lift of approximately 378 deg. K, which is considerably higher than is commonly called for in HVAC and refrigeration applications where heat pumps are most often employed. Also because of the variation of the rejection temperature (from 100 to 381 deg. K), extreme flexibility in the configuration and operation of the heat pump is required. A three-stage compression cycle using a refrigerant such as CFC-11 or HCFC-123 was formulated with operation possible with one, two or three stages of compression. Also, to meet the redundancy requirements, compression was divided up over multiple compressors in each stage. A control scheme was devised that allowed these multiple compressors to be operated as required so that the heat pump could perform with variable heat loads and rejection conditions. A prototype heat pump was designed and constructed to investigate the key elements of the high-lift heat pump concept. Control software was written and implemented in the prototype to allow fully automatic operation. The heat pump was capable of operation over a wide range of rejection temperatures and cooling loads, while maintaining cooling water temperature well within the required specification of 40 deg. C +/- 1.7 deg. C. This performance was verified through testing.

  7. Resorption heat pump

    International Nuclear Information System (INIS)

    Vasiliev, L.L.; Mishkinis, D.A.; Antukh, A.A.; Kulakov, A.G.; Vasiliev, L.L.

    2004-01-01

    Resorption processes are based on at least two solid-sorption reactors application. The most favorable situation for the resorption heat pumps is the case, when the presence of a liquid phase is impossible. From simple case--two reactors with two salts to complicated system with two salts + active carbon fiber (fabric) and two branch of the heat pump acting out of phase to produce heat and cold simultaneously, this is the topic of this research program

  8. Portable photovoltaic irrigation pumps

    Energy Technology Data Exchange (ETDEWEB)

    Furber, J. D.

    1980-07-01

    Experiences in developing a solar-powered irrigation pump to meet the needs of poor farmers in developing nations are summarized. The design which evolved is small and portable, employing a high-efficiency electric pump, powered by photovoltaic panels. Particular emphasis is placed on how the system works, and on early field problems experienced with the first prototypes. The resolution of these problems and the performance of actual systems in various countries is presented and user responses are noted.

  9. SEM microcharacterization of semiconductors

    CERN Document Server

    Holt, D B

    1989-01-01

    Applications of SEM techniques of microcharacterization have proliferated to cover every type of material and virtually every branch of science and technology. This book emphasizes the fundamental physical principles. The first section deals with the foundation of microcharacterization in electron beam instruments and the second deals with the interpretation of the information obtained in the main operating modes of a scanning electron microscope.

  10. Energy efficiency in pumps

    Energy Technology Data Exchange (ETDEWEB)

    Kaya, Durmus; Yagmur, E. Alptekin [TUBITAK-MRC, P.O. Box 21, 41470 Gebze, Kocaeli (Turkey); Yigit, K. Suleyman; Eren, A. Salih; Celik, Cenk [Engineering Faculty, Kocaeli University, Kocaeli (Turkey); Kilic, Fatma Canka [Department of Air Conditioning and Refrigeration, Kocaeli University, Kullar, Kocaeli (Turkey)

    2008-06-15

    In this paper, ''energy efficiency'' studies, done in a big industrial facility's pumps, are reported. For this purpose; the flow rate, pressure and temperature have been measured for each pump in different operating conditions and at maximum load. In addition, the electrical power drawn by the electric motor has been measured. The efficiencies of the existing pumps and electric motor have been calculated by using the measured data. Potential energy saving opportunities have been studied by taking into account the results of the calculations for each pump and electric motor. As a conclusion, improvements should be made each system. The required investment costs for these improvements have been determined, and simple payback periods have been calculated. The main energy saving opportunities result from: replacements of the existing low efficiency pumps, maintenance of the pumps whose efficiencies start to decline at certain range, replacements of high power electric motors with electric motors that have suitable power, usage of high efficiency electric motors and elimination of cavitation problems. (author)

  11. Energy efficiency in pumps

    International Nuclear Information System (INIS)

    Kaya, Durmus; Yagmur, E. Alptekin; Yigit, K. Suleyman; Kilic, Fatma Canka; Eren, A. Salih; Celik, Cenk

    2008-01-01

    In this paper, 'energy efficiency' studies, done in a big industrial facility's pumps, are reported. For this purpose; the flow rate, pressure and temperature have been measured for each pump in different operating conditions and at maximum load. In addition, the electrical power drawn by the electric motor has been measured. The efficiencies of the existing pumps and electric motor have been calculated by using the measured data. Potential energy saving opportunities have been studied by taking into account the results of the calculations for each pump and electric motor. As a conclusion, improvements should be made each system. The required investment costs for these improvements have been determined, and simple payback periods have been calculated. The main energy saving opportunities result from: replacements of the existing low efficiency pumps, maintenance of the pumps whose efficiencies start to decline at certain range, replacements of high power electric motors with electric motors that have suitable power, usage of high efficiency electric motors and elimination of cavitation problems

  12. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  13. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  14. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  15. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  16. Polarised two-photon excitation of quantum well excitons for manipulation of optically pumped terahertz lasers

    Energy Technology Data Exchange (ETDEWEB)

    Slavcheva, G., E-mail: gsk23@bath.ac.uk [Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2AZ (United Kingdom); Kavokin, A.V., E-mail: A.Kavokin@soton.ac.uk [School of Physics and Astronomy, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Spin Optics Laboratory, St. Petersburg State University, 1, Ulyanovskaya 198504 (Russian Federation)

    2014-11-15

    Optical pumping of excited exciton states in a semiconductor quantum well embedded in a microcavity is a tool for realisation of ultra-compact terahertz (THz) lasers based on stimulated optical transition between excited (2p) and ground (1s) exciton state. We show that the probability of two-photon absorption by a 2p-exciton is strongly dependent on the polarisation of both pumping photons. Five-fold variation of the threshold power for terahertz lasing by switching from circular to co-linear pumping is predicted. We identify photon polarisation configurations for achieving maximum THz photon generation quantum efficiency.

  17. Pump trials for charged liquids

    International Nuclear Information System (INIS)

    Moroni, J.C.; Niver, A.

    1964-01-01

    The pumps intended for the circulation of charged and radioactive liquids have particular qualities. The choice of such a pump has called for endurance tests with various types of equipment: a Goodyear volumetric screw pumps, and RICHIER, Klein and SCHABAVER centrifugal pumps. The latter, fitted with a special oakum, gave the best results. (authors) [fr

  18. BIOMATERIALS FOR ROTARY BLOOD PUMPS

    NARCIS (Netherlands)

    VANOEVEREN, W

    Rotary blood pumps are used for cardiac assist and cardiopulmonary support since mechanical blood damage is less than with conventional roller pumps. The high shear rate in the rotary pump and the reduced anticoagulation of the patient during prolonged pumping enforces high demands on the

  19. Excitonic optical bistability in n-type doped semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An; Le Thi Cat Tuong

    1991-07-01

    A resonant monochromatic pump laser generates coherent excitons in an n-type doped semiconductor. Both exciton-exciton and exciton-donor interactions come into play. The former interaction can give rise to the appearance of optical bistability which is heavily influenced by the latter one. When optical bistability occurs at a fixed laser frequency both its holding intensity and hysteresis loop size are shown to decrease with increasing donor concentration. Two possibilities are suggested for experimentally determining one of the two parameters of the system - the exciton-donor coupling constant and the donor concentration, if the other parameter is known beforehand. (author). 36 refs, 2 figs

  20. Pumps in nuclear power plants

    International Nuclear Information System (INIS)

    Kim, J.H.

    1991-01-01

    This paper reports that pumps play an important role in nuclear plant operation. For instance, reactor coolant pumps (RCPs) should provide adequate cooling for reactor core in both normal operation and transient or accident conditions. Pumps such as Low Pressure Safety Injection (LPSI) pump in the Emergency Core Cooling System (ECCS) play a crucial role during an accident, and their reliability is of paramount importance. Some key issues involved with pumps in nuclear plant system include the performance of RCP under two-phase flow conditions, piping vibration due to pump operating in two-phase flows, and reliability of LPSI pumps