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Sample records for beam epitaxy growth

  1. Kinetic roughening in models of molecular-beam epitaxy growth

    International Nuclear Information System (INIS)

    A brief survey of recent progress in understanding the kinetic roughening in growth models with surface diffusion, which are relevant for growth by molecular-beam epitaxy, in given. The main emphasis is on results of computer simulations. Properties of several different models are described and compared. In particular, results for two models, the Wolf-Villain model (and its modifications) and the full diffusion model, in 1+1, 2+1 and also in higher dimensions are presented. The asymptotic behaviour of the Wolf-Villain model is of an Edwards-Wilkinson type. Both models show an unusual scaling behaviour of the height-height correlation function

  2. Chemical beam epitaxy growth of III–V semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Mohummed Noori, Farah T. [University of Baghdad , College of science, Physics department , Jadiriya ,Baghdad (Iraq)

    2013-12-16

    Indium- Arsenide (InAs) nanowires were grown in a high vacuum chemical beam epitaxy (CBE) unit on InAs(111) wafers substrates at 425–454°C. Two types of nanogold were used as orientation catalyst, 40nm and 80nm. The measurements were performed using scanning electron microscopy showed that uniform nanowires. The nanowires orient vertically in the InAs nanowire scanning electron microscopy of an array 80nm diameter InAs nanowire with length is in the range 0.5–1 μm and of an array 40nm diameter with length is in the range 0.3–0.7μm. The nanowire length with growth time shows that the linear increase of nanowires start to grow as soon as TMIn is available. The growth rate with temperature was studied.

  3. On the Growth of Complex Oxides by Molecular Beam Epitaxy

    Science.gov (United States)

    Fong, Dillon

    Functional materials based on complex oxides in thin film form offer new and exciting strategies for meeting many of our outstanding energy challenges through systematic control of layer sequencing, strain, etc. However, the synthesis of such oxide films can be a major challenge even when utilizing reactive molecular-beam epitaxy (MBE), a powerful deposition technique that allows the construction of materials atomic plane by atomic plane. To understand the fundamental physics of oxide growth by reactive MBE, we present in situ surface x-ray diffraction results on the growth of SrTiO3 and SrO-SrTiO3 thin films on (001)-oriented SrTiO3 substrates. For homoepitaxy, we compare sequential deposition (alternating Sr and Ti monolayer doses) with that of co-deposition of Sr and Ti, both in a background of oxygen pressure, and observe drastically different growth pathways due to the presence of a TiO2 double layer. For heteroepitaxial growth of Ruddlesden-Popper SrO-SrTiO3 films, we find that layers rearrange dynamically, resulting in layer sequences distinct from the shutter sequence. In general, the starting surface structure and composition, in combination with local thermodynamic considerations, strongly influence our ability to atomically construct new complex oxides.

  4. Growth of epitaxial ZnO films on sapphire substrates by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Hyndman, Adam R.; Allen, Martin W.; Reeves, Roger J.

    2014-03-01

    Epitaxial layers of ZnO have been grown on c-plane, (0001) sapphire substrates by plasma assisted molecular beam epitaxy. The oxygen:zinc flux ratio was found to be crucial in obtaining a film with a smooth surface and good crystallinity. When increasing film thickness from ~80 to 220 nm we observed an increase in the streakiness of RHEED images, and XRD revealed a reduction in crystal strain and increase in crystal alignment. A film with surface roughness of 0.5 nm and a XRD rocking curve FWHM of 0.1 for the main ZnO peak (0002) was achieved by depositing a low temperature ZnO buffer layer at 450 °C and then growing for 120 minutes at 700 °C with a Zn-cell temperature of 320 °C and an oxygen partial pressure of 7e-7 Torr. We found novel structures on two samples grown outside of our ideal oxygen:zinc flux ratio. SEM images of a sample believed to have been grown in a Zn-rich environment showed flower like structures up to 150 um in diameter which appear to have formed during growth. Another sample believed to have been deposited in a Zn-deficient environment had rings approximately 1.5 um in diameter scattered on its surface.

  5. Photo-metalorganic molecular-beam epitaxy: A new epitaxial growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Tokumitsu, E.; Yamada, T.; Konagai, M.; Takahashi, K.

    1989-05-01

    Metalorganic molecular-beam epitaxy (MOMBE) combines many important advantages of molecular-beam epitaxy and metalorganic chemical vapor deposition. One of the most important features of MOMBE is that photochemical reaction can be used and we can call this new technique ''photo-MOMBE.'' Triisobutylaluminum (TIBA) has been used in photo-MOMBE instead of triethylaluminum (TEA) as a new aluminum source in order to enhance the photodecomposition. The optical absorption coefficient of TIBA for 193 nm was found to be three times greater than that of TEA. Selective deposition of Al, AlAs, and GaAlAs was carried out by using an ArF excimer laser. The Al mole fraction of GaAlAs ternary alloy grown with the excimer laser irradiation was greater than that of the film grown without the laser irradiation.

  6. Photo-metalorganic molecular-beam epitaxy: A new epitaxial growth technique

    International Nuclear Information System (INIS)

    Metalorganic molecular-beam epitaxy (MOMBE) combines many important advantages of molecular-beam epitaxy and metalorganic chemical vapor deposition. One of the most important features of MOMBE is that photochemical reaction can be used and we can call this new technique ''photo-MOMBE.'' Triisobutylaluminum (TIBA) has been used in photo-MOMBE instead of triethylaluminum (TEA) as a new aluminum source in order to enhance the photodecomposition. The optical absorption coefficient of TIBA for 193 nm was found to be three times greater than that of TEA. Selective deposition of Al, AlAs, and GaAlAs was carried out by using an ArF excimer laser. The Al mole fraction of GaAlAs ternary alloy grown with the excimer laser irradiation was greater than that of the film grown without the laser irradiation

  7. Molecular beam epitaxy growth of InSb1−xBix thin films

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Saha Roy, Ivy; Shi, Peixiong; Hallen, Anders; Lai, Zonghe

    2013-01-01

    Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are...

  8. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    OpenAIRE

    S. S. Kushvaha; P.Pal; Shukla, A. K.; Joshi, Amish G; Govind Gupta; M. Kumar; Singh, S.; Bipin K. Gupta; Haranath, D.

    2014-01-01

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film s...

  9. Growth of CdTe films on GaAs by ionized cluster beam epitaxy

    Science.gov (United States)

    Tang, H. P.; Feng, J. Y.; Fan, Y. D.; Li, H. D.

    1991-06-01

    Stoichiometric epitaxial films of CdTe were grown on (100)GaAs substrates by ionized cluster beam (ICB) epitaxy. Streaky RHEED patterns indicated good crystallinity and surface flatness of the epitaxial CdTe films. CdTe(100) orientation was obtained when the substrate preheating temperature was 480°C, while CdTe growth inboth (100) and (111) orientations occured when the substrate preheating temperature was above 550°C. The characteristics of the ICB growth process were investigated and the cluster-involving growth behavior has been evidenced. When sufficient clusters were generated in the deposition beam under adequate source vapor pressures, the crystalline quality of the resulting CdTe epilayers improved significantly with the increase of kinetic energy of the CdTe clusters. The best CdTe epilayer obtained exhibited a CdTe(400) double crystal rocking curve (DCRC) having a FWHM of 630 arc sec.

  10. Growth of CdTe films on GaAs by ionized cluster beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tang, H.P.; Feng, J.Y.; Fan, Y.D.; Li, H.D. (Dept. of Materials Science and Engineering, Tsinghua Univ., Beijing (China))

    1991-06-01

    Stoichiometric epitaxial films of CdTe were grown on (100)GaAs substrates by ionized cluster beam (ICB) epitaxy. Streaky RHEED patterns indicated good crystallinity and surface flatness of the epitaxial CdTe films. CdTe(100) orientation was obtained when the substrate preheating temperature was 480degC, while CdTe growth in both (100) and (111) orientations occurred when the substrate preheating temperature was above 550degC. The characteristics of the ICB growth process were investigated and the cluster-involving growth behavior has been evidenced. When sufficient clusters were generated in the deposition beam under adequate source vapor pressures, the crystalline quality of the resulting CdTe epilayers improved significantly with the increase of kinetic energy of the CdTe clusters. The best CdTe epilayer obtained exhibited a CdTe(400) double crystal rocking curve (DCRC) having a FWHM of 630 arc sec. (orig.).

  11. High growth rate metal-organic molecular beam epitaxy for the fabrication of GaAs space solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Freundlich, A.; Newman, F.; Monier, C.; Street, S. [University of Houston, TX (United States). Space Vacuum Epitaxy Center; Dargan, P.; Levy, M. [Riber Inc., Edison, NJ (United States)

    2000-06-01

    In this work, the epitaxial growth of GaAs photovoltaic devices using metalorganic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) with growth rates in excess of 3 {mu}m/h is undertaken. The performance of these preliminary devices offer encouraging evidence for MOMBE and CBE as possible alternatives to the more common metalorganic chemical vapor deposition (MOCVD) for the production of III-V solar cells. (author)

  12. Molecular-beam epitaxy growth and characterization of 5-{mu}m quantum cascade laser

    Energy Technology Data Exchange (ETDEWEB)

    Mamutin, V V; Ustinov, V M; Ilyinskaya, N D; Baydakova, M V; Ber, B Ya; Kasantsev, D Yu, E-mail: boris.ber@mail.ioffe.ru [Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg, 26 Polytechnicheskaya St, 194021 (Russian Federation)

    2011-04-01

    Molecular-beam epitaxy growth of 5 {mu}m emitting strain-compensated quantum semiconductor laser (QCL) is reported. The QCL structure is characterized by complementary techniques: high-resolution X-ray diffraction and dynamical secondary-ion mass-spectrometry, that reveal the high quality of QCL structure and in-depth distribution of chemical composition, respectively.

  13. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos

    2008-06-01

    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  14. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    International Nuclear Information System (INIS)

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface

  15. Growth of DyBa2Cu3Ox thin films by molecular beam epitaxy

    International Nuclear Information System (INIS)

    In-situ growth of superconducting DyBa2Cu3Ox thin films on single crystal SrTiO3 substrates has been investigated under molecular beam epitaxial conditions and using a dc glow discharge source to provide activated oxygen. The effect of the substrate temperature on phase formation and texture of the films has been investigated. Epitaxial films with c-axis orientation have been prepared at 700 degC. The films were found to undergo superconducting transition at ∼ 90K and exhibited a critical current density of ∼ 7x105 Amp/cm2 at 77K. (author)

  16. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  17. Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Transmission electron microscopy is used to reveal threading defects in single crystal c-oriented GaN nanorods grown on (0001)sapphire by molecular beam epitaxy. The defects are shown to be planar faults lying on (1010) planes and bounded by opposite partial screw dislocations with Burgers vectors of 1/2. The faults nucleate, as dislocation half-loops, from points close to the GaN/(0001)sapphire interface. It is proposed that the spiral growth of the partial atomic step joining the emerging dislocations controls nanorod growth and accounts for the growth surface morphology. The significance of these defects for nanorod growth and applications is discussed

  18. Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation

    Science.gov (United States)

    Jiao, L.; Liu, H. J.; Chen, J. L.; Yi, Y.; Chen, W. G.; Cai, Y.; Wang, J. N.; Dai, X. Q.; Wang, N.; Ho, W. K.; Xie, M. H.

    2015-05-01

    Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics. Here we present a growth study by molecular-beam epitaxy of ML and sub-ML MoSe2, an important member of TMDs, revealing its unique growth characteristics as well as the formation processes of domain boundary (DB) defects. A dramatic effect of growth temperature and post-growth annealing on DB formation is uncovered.

  19. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  20. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes

  1. Growth of GaN with warm ammonia by molecular beam epitaxy

    Science.gov (United States)

    Kawaharazuka, A.; Yoshizaki, T.; Ploog, K. H.; Horikoshi, Y.

    2009-03-01

    We demonstrate the growth of GaN by molecular beam epitaxy with warm ammonia as a nitrogen source. Ammonia gas is heated by the tungsten filament located at the open end of the gas-tube installed in the growth chamber. By using this simple structure, the multiple collisions of molecules within the heater, thus the generation of nitrogen molecule, can be suppressed. The crystalline quality of the grown GaN layer is significantly improved by introducing the warm ammonia. This effect can be explained by the enhancement of the two-dimensional growth due to the active nitrogen species such as radical NH2* generated by cracking ammonia molecule.

  2. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    International Nuclear Information System (INIS)

    We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors

  3. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Lastras-Martínez, A., E-mail: alm@cactus.iico.uaslp.mx, E-mail: alastras@gmail.com; Ortega-Gallegos, J.; Guevara-Macías, L. E.; Nuñez-Olvera, O.; Balderas-Navarro, R. E.; Lastras-Martínez, L. F. [Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, SLP 78000 (Mexico); Lastras-Montaño, L. A. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Lastras-Montaño, M. A. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)

    2014-03-01

    We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  4. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    Directory of Open Access Journals (Sweden)

    A. Lastras-Martínez

    2014-03-01

    Full Text Available We report on real time-resolved Reflectance-difference (RD spectroscopy of GaAs(001 grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  5. Application of ellipsometry to crystal growth by organometallic molecular beam epitaxy

    Science.gov (United States)

    Aspnes, D. E.; Quinn, W. E.; Gregory, S.

    1990-06-01

    We report the first use of ellipsometry as a real-time monitor of III-V semiconductor crystal growth by molecular beam epitaxy, specifically growth of GaAs and AlGaAs from arsine, triethylgallium, and triethylaluminum sources. Our results provide new insight into the oxide desorption process and show a sensitivity of ±0.03 in compositions x>0.2 for 10 Å thickness increments of AlxGa1-xAs during initial deposition on GaAs.

  6. An ultra-compact, high-throughput molecular beam epitaxy growth system

    Energy Technology Data Exchange (ETDEWEB)

    Baker, A. A.; Hesjedal, T. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Diamond Light Source, Didcot OX11 0DE (United Kingdom); Braun, W., E-mail: w.braun@fkf.mpg.de, E-mail: fischer@createc.de; Rembold, S.; Fischer, A., E-mail: w.braun@fkf.mpg.de, E-mail: fischer@createc.de [CreaTec Fischer and Co. GmbH, Industriestr. 9, 74391 Erligheim (Germany); Gassler, G. [Dr. Gassler Electron Devices GmbH, List Str. 4, 89079 Ulm (Germany)

    2015-04-15

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)

  7. Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

    Science.gov (United States)

    Chou, C. Y.; Torfi, A.; Pei, C.; Wang, W. I.

    2016-05-01

    In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientation presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.

  8. Molecular beam epitaxy of SrTiO3 with a growth window

    Science.gov (United States)

    Jalan, Bharat; Moetakef, Pouya; Stemmer, Susanne

    2009-07-01

    Many complex oxides with only nonvolatile constituents do not have a wide growth window in conventional molecular beam epitaxy (MBE) approaches, which makes it difficult to obtain stoichiometric films. Here it is shown that a growth window in which the stoichiometry is self-regulating can be achieved for SrTiO3 films by using a hybrid MBE approach that uses a volatile metal-organic source for Ti, titanium tetra isopropoxide (TTIP). The growth window widens and shifts to higher TTIP/Sr flux ratios with increasing temperature, showing that it is related to the desorption of the volatile TTIP. We demonstrate stoichiometric, highly perfect, insulating SrTiO3 films. The approach can be adapted for the growth of other complex oxides that previously were believed to have no wide MBE growth window.

  9. Epitaxial growth of MgO and Fe/MgO/Fe magnetic tunnel junctions on (100)-Si by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Epitaxial growth of MgO barrier on Si is of technological importance due to the symmetry filtering effect of the MgO barrier in conjunction with bcc-ferromagnets. We study the epitaxial growth of MgO on (100)-Si by molecular beam epitaxy. MgO matches Si with 4:3 cell ratio, which renders Fe to be 45 deg. rotated relative to Si, in sharp contrast to the direct epitaxial growth of Fe on Si. The compressive strains from Si lead to the formation of small angle grain boundaries in MgO below 5 nm, and also affect the transport characteristics of Fe/MgO/Fe magnetic tunnel junctions formed on top

  10. Design and growth of a P N diode by molecular beam epitaxy

    International Nuclear Information System (INIS)

    In this work, design, growth and characterization of a GaAs p-n contact is presented. The contact growth has been performed by Molecular Beam Epitaxy. The n layer with thickness of 1μm and electron concentration of 6 * 1017 cm-3 has been grown on a p-type GaAs substrate with hole concentration of 1 * 1017cm-3. During growth, in situ monitoring of the layer stoichiometry has been made possible by using Reflection High Energy Electron Diffraction technique. After growth characterization was performed by the use of Hall-effect measurement, the results for the carrier concentration was further confirmed by Electrochemical Capacitance-Voltage profiling technique

  11. Investigation of the silicon ion density during molecular beam epitaxy growth

    CERN Document Server

    Eifler, G; Ashurov, K; Morozov, S

    2002-01-01

    Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate betw...

  12. Surface diffusion effects on growth of nanowires by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Surface processes play a large role in the growth of semiconductor nanowires by chemical beam epitaxy. In particular, for III-V nanowires the surface diffusion of group-III species is important to understand in order to control the nanowire growth. In this paper, we have grown InAs-based nanowires positioned by electron beam lithography and have investigated the dependence of the diffusion of In species on temperature, group-III and -V source pressure and group-V source combinations by measuring nanowire growth rate for different nanowire spacings. We present a model which relates the nanowire growth rate to the migration length of In species. The model is fitted to the experimental data for different growth conditions, using the migration length as fitting parameter. The results show that the migration length increases with decreasing temperature and increasing group-V/group-III source pressure ratio. This will most often lead to an increase in growth rate, but deviations will occur due to incomplete decomposition and changes in sticking coefficient for group-III species. The results also show that the introduction of phosphorous precursor for growth of InAs1-xPx nanowires decreases the migration length of the In species followed by a decrease in nanowire growth rate

  13. InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope

    International Nuclear Information System (INIS)

    The growth on InAs on GaAs(001) has attracted great interest and investigation over the past few decades primarily due to the opto-electronic properties of the self-assembled quantum dot (QD) arrays formed. Scanning tunnelling microscopy (STM) has been extensively employed to investigate the complicated and spontaneous mechanism of QD growth via molecular beam epitaxy (MBE). Classically, combined MBE-STM requires quenching the sample after growth and transferring it to an arsenic-free high vacuum chamber which houses the STM system. However, without access to the phenomenon as a dynamic process a basic understanding remains elusive. In order to access surface dynamics, MBE and STM must be combined into a single element. The system herein discussed allows the operation of MBE sources in an STM system relating to InAs/GaAs(001) surfaces.

  14. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Abhinav, E-mail: praka019@umn.edu; Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat, E-mail: bjalan@umn.edu [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2015-11-15

    Owing to its high room-temperature electron mobility and wide bandgap, BaSnO{sub 3} has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO{sub 3} films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO{sub 3} films were thus grown on SrTiO{sub 3} (001) and LaAlO{sub 3} (001) substrates. Growth conditions for stoichiometric BaSnO{sub 3} were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO{sub 3} using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO{sub 3}.

  15. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO3

    International Nuclear Information System (INIS)

    Owing to its high room-temperature electron mobility and wide bandgap, BaSnO3 has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO3 films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO3 films were thus grown on SrTiO3 (001) and LaAlO3 (001) substrates. Growth conditions for stoichiometric BaSnO3 were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO3 using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO3

  16. Efficient photo-enhancement of GaP and AlGaP growth in chemical beam epitaxy

    Science.gov (United States)

    Yoshimoto, M.; Ozasa, K.; Matsunami, H.

    1991-11-01

    The growth rate of GaP and AlGaP epitaxial layers was efficiently enhanced by N2-laser irradiation at low substrate temperatures in chemical beam epitaxy. The photo-enhancement efficiency, defined as the ratio of the number of deposited Ga atoms to the number of irradiating photons per unit area per unit time, is estimated to be 7×10-4. The decomposition of triethylaluminum was also enhanced by the irradiation, but less efficiently.

  17. Investigation of the silicon ion density during molecular beam epitaxy growth

    International Nuclear Information System (INIS)

    Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate between 0 to -1000 V. The dependencies of ion and electron densities were shown and discussed within the framework of a simple model. The charged carrier densities measured with the monitoring system enable to separate the ion part of the substrate current and show its correlation to the generation rate. Comparing the ion density on the whole substrate and in the center gives a hint to the ion beam focusing effect. The maximum ion and electron current densities obtained were 0.40 and 0.61 μA/cm2, respectively

  18. Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

    International Nuclear Information System (INIS)

    We have re-investigated growth and magnetic properties of Cr2CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr2CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr2CoGa Heusler phase, rather than Co2CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 oC. The measured small spin moment of Cr2CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr2CoGa and the existence of the disorders and phase separation

  19. Growth and properties of amorphous silicon films grown using pulsed-flow reactive plasma beam epitaxy

    Science.gov (United States)

    Dalal, Vikram L.; Knox, Ralph; Kandalaft, Nabeeh; Baldwin, Greg

    1991-01-01

    The growth and properties of a-Si:H films grown using a novel deposition technique, reactive plasma beam epitaxy, are discussed. In this technique, a remote H plasma produced in a microwave-ECR reactor is used to grow a-Si:H films at low pressures. The H ions react with SiH4 introduced near the substrate to produce the film. The flow of SiH4 is pulsed on or off, thereby achieving in-situ annealing of the film during growth by H ions and radicals. The films produced by this technique appear to have good electronic quality, and are more stable than the standard glow discharge films.

  20. Palladium assisted hetroepitaxial growth of an InAs nanowire by molecular beam epitaxy

    International Nuclear Information System (INIS)

    The palladium (Pd) assisted epitaxial growth of technologically important InAs nanowires grown on GaAs{111}B substrates using molecular beam epitaxy is reported. The grown free-standing InAs nanowires adapted a vapor–liquid–solid growth mechanism. The impacts of the catalyst particle density, growth temperature and input V/III precursor ratio have been investigated to identify better growth conditions for getting high-density non-<111>-orientated InAs nanowires. We assert here that two kind of nanowires are observed, one having a pure zinc-blende crystalline structure free of stacking faults, and the other with a defect-free wurtzite crystalline structure. However, few of them have defect imperfections too. The L- and Y-shaped nanowires confirm similar surface free energies for possible <110> growth directions. These unusual growth directions are attributed to the effect of the catalyst material as well as the surface-induced strain at the interface between the grown nanowires with substrates. The structural features of the grown nanowires are studied by employing scanning and transmission electron microscopic techniques. The obtained TEM results confirm that the nanowire catalyst interface is not a straightforward zinc-blende structured nanowire. Energy dispersive x-ray (EDX) analysis reveals that the tip of the grown nanowires with the chemical composition of Pd and In have a nearly 50:50 ratio, while the nanowire body did not have any catalyst traces other than the composition of InAs for both type of nanowires. The obtained high angle annular dark field (HAADF) TEM image for both types of nanowires along with the intensity profile provided evidence for cubic as well as hexagonal facets. (paper)

  1. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R

    1980-01-01

    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  2. Surface energies for molecular beam epitaxy growth of HgTe and CdTe

    Science.gov (United States)

    Berding, M. A.; Krishnamurthy, Srinivasan; Sher, A.

    1991-10-01

    We present results for the surface binding energies for HgTe and CdTe that will serve as input for molecular beam epitaxy growth models. We have found that the surface binding energies are surface orientation dependent and are not simply proportional to the number of first-neighbor bonds being made to the underlying layer. Moreover, because of the possibility of charge transfer between cation and anion surface states, one may have large differences between the binding energy for the first and the last atom in a given layer, and these differences will be different for the narrow-gap, less ionic materials than for the wide gap, ionic materials. We also find that the surface states associated with an isolated surface atom or vacancy are extended in materials with small gaps and small effective masses, and thus call into question the modeling of surface binding by simple pair interactions.

  3. Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

  4. Growth and properties of GdTiO3 films prepared by hybrid molecular beam epitaxy

    Science.gov (United States)

    Moetakef, Pouya; Ouellette, Daniel G.; Zhang, Jack Y.; Cain, Tyler A.; Allen, S. James; Stemmer, Susanne

    2012-09-01

    The paper reports on the thin film growth of a protoptype Mott insulator, ferrimagnetic GdTiO3, using shuttered molecular beam epitaxy. Substrates were (001) (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT), with and without epitaxial SrTiO3 buffer layers, respectively. It was found that on bare LSAT, the starting monolayer was crucial for stabilizing the GdTiO3 perovskite phase. The quality of the films was evaluated using structural, electric, optical and magnetic characterization. Structural characterization showed that the GdTiO3 layers were free of pyrochlore impurity phases and that the lattice parameter was close to what was expected for coherently strained, stoichiometric GdTiO3. The room temperature film resistivity was 7 Ωcm and increased with decreasing temperature, consistent with Mott insulating characteristics. The Curie temperature was 30 K and a small coercivity was observed at 2 K, in good agreement with bulk GdTiO3 properties reported in the literature.

  5. Optical control of growth of AlxGa1 - xAs by organometallic molecular beam epitaxy

    Science.gov (United States)

    Aspnes, D. E.; Quinn, W. E.; Gregory, S.

    1990-12-01

    Using spectroellipsometry, we obtain information on the near-surface composition x of epitaxial AlxGa1-xAs layers during crystal growth by organometallic molecular beam epitaxy and use this information to regulate the flow of triethylaluminum to the growth surface. The resulting closed-loop control system maintains the imaginary part of the dielectric response of thick AlxGa1-xAs films constant to an equivalent compositional precision better than ±0.001 over extended periods of time.

  6. Growth of SrVO3 thin films by hybrid molecular beam epitaxy

    International Nuclear Information System (INIS)

    The authors report the growth of stoichiometric SrVO3 thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO3 films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes in the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO3 thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique

  7. Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices

    International Nuclear Information System (INIS)

    Our recent progress in low-temperature molecular beam epitaxy of ferromagnetic Heusler alloys on group-IV-semiconductor is reviewed. By optimizing beam flux ratio (Fe:Si = 3:1) and growth temperature (130 oC), a high-quality hybrid structure, i.e., DO3-type Fe3Si on Ge with an atomically flat interface, was achieved. Excellent magnetic properties with a small coercivity (0.9 Oe) and electrical properties with Schottky barrier height of 0.52 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was on the order of 104. In addition, heteroepitaxy of half-metallic alloys (Fe3-XMnxSi(X = 0.6-1.4)) on Ge substrates was demonstrated. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors, consisting of Ge channel with high mobility and ferromagnetic source/drain for spin-injection.

  8. Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Wuwei, E-mail: wfeng@cugb.edu.cn; Wang, Weihua [School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Zhao, Chenglong [Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Van Quang, Nguyen; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dung, Dang Duc [Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam)

    2015-11-15

    We have re-investigated growth and magnetic properties of Cr{sub 2}CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr{sub 2}CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr{sub 2}CoGa Heusler phase, rather than Co{sub 2}CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 {sup o}C. The measured small spin moment of Cr{sub 2}CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr{sub 2}CoGa and the existence of the disorders and phase separation.

  9. Growth of HfOx thin films by reactive molecular beam epitaxy

    International Nuclear Information System (INIS)

    Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency

  10. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

    OpenAIRE

    Zhong, Aihua; Hane, Kazuhiro

    2012-01-01

    GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band ...

  11. Laser Molecular Beam Epitaxy Growth of BaTiO3 in Seven Thousands of Unit-Cell Layers

    Institute of Scientific and Technical Information of China (English)

    HUANG Yan-Hong; YANG Guo-Zhen; HE Meng; ZHAO Kun; TIAN Huan-Fang; L(U) Hui-Bin; JIN Kui-Juan; CHEN Zheng-Hao; ZHOU Yue-Liang; LI Jian-Qi

    2005-01-01

    @@ BaTiO3 thin films in seven thousands of unit-cell layers have been successfully fabricated on SrTiO3 (001)substrates by laser molecular beam epitaxy. The fine streak pattern and the undamping intensity oscillation of reflection high-energy electron diffraction indicate that the BaTiO3 film was layer-by-layer epitaxial growth. The measurements of scanning electron microscopy and atomic force microscopy show that surfaces of the BaTiO3thin film are atomically smooth. The measurements of x-ray diffraction and transmission electron microscopy,as well as selected-area electron diffraction revealthat the BaTiO3 thin film is a c-oriented epitaxial crystalline structure.

  12. Thin film growth of CaFe2As2 by molecular beam epitaxy

    Science.gov (United States)

    Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

    2016-01-01

    Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

  13. Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy

    OpenAIRE

    Jalan, Bharat; Engel-Herbert, Roman; Wright, Nicholas J.; Stemmer, Susanne

    2009-01-01

    A hybrid molecular beam epitaxy approach for atomic-layer controlled growth of high-quality SrTiO3 films with scalable growth rates was developed. The approach uses an effusion cell for Sr, a plasma source for oxygen, and a metal-organic source titanium tetra isopropoxide for Ti. SrTiO3 films were investigated as a function of cation flux ratio on 001 SrTiO3 and LaAlO30.3Sr2AlTaO60.7 LSAT substrates. Growth conditions for stoichiometric insulating films were identified. Persistent 180 oscilla...

  14. Molecular beam epitaxy a short history

    CERN Document Server

    Orton, J W

    2015-01-01

    This volume describes the development of molecular beam epitaxy from its origins in the 1960s through to the present day. It begins with a short historical account of other methods of crystal growth, both bulk and epitaxial, to set the subject in context, emphasising the wide range of semiconductor materials employed. This is followed by an introduction to molecular beams and their use in the Stern-Gerlach experiment and the development of the microwave MASER.

  15. Epitaxial growth of HgCdTe 1.55-um avalanche photodiodes by molecular beam epitaxy

    Science.gov (United States)

    de Lyon, Terence J.; Baumgratz, B.; Chapman, G. R.; Gordon, E.; Hunter, Andrew T.; Jack, Michael D.; Jensen, John E.; Johnson, W.; Johs, Blaine D.; Kosai, K.; Larsen, W.; Olson, G. L.; Sen, M.; Walker, B.

    1999-04-01

    Separate absorption and multiplication avalanche photodiode (SAM-APD) device structures, operating in the 1.1 - 1.6 micrometer spectral range, have been fabricated in the HgCdTe material system by molecular-beam epitaxy. These HgCdTe device structures, which offer an alternative technology to existing III-V APD detectors, were grown on CdZnTe(211)B substrates using CdTe, Te, and Hg sources with in situ In and As doping. The alloy composition of the HgCdTe layers was adjusted to achieve both efficient absorption of IR radiation in the 1.1 - 1.6 micrometer spectral range and low excess-noise avalanche multiplication. To achieve resonant enhancement of hole impact ionization from the split-off valence band, the Hg(subscript 1-x)Cd(subscript x)Te alloy composition in the gain region of the device, x equals 0.73, was chosen to achieve equality between the bandgap energy and spin-orbit splitting. The appropriate value of this alloy composition was determined from analysis of the 300 K bandgap and spin-orbit splitting energies of a set of calibration layers, using a combination of IR transmission and spectroscopic ellipsometry measurements. MBE-grown APD epitaxial wafers were processed into passivated mesa-type discrete device structures and diode mini-arrays using conventional HgCdTe process technology. Device spectral response, dark current density, and avalanche gain measurements were performed on discrete diodes and diode mini- arrays on the processed wafers. Avalanche gains in the range of 30 - 40 at reverse bias of 85 - 90 V and array-median dark current density below 2 X 10(superscript -4) A/cm(superscript 2) at 40 V reverse bias have been demonstrated.

  16. Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

    OpenAIRE

    Bengoechea-Encabo, A.; S. Albert; Sanchez-Garcia, M.A.; López, L.L.; Estradé, S.; Rebled, J.M.; Peiró, F.; Nataf, G.; De Mierry, P.; Zuniga-Perez, J.; E. Calleja

    2012-01-01

    Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the first time on a-plane GaN templates. Ti masks with 150 nm diameter nanoholes were fabricated by colloidal lithography, an easy, fast and cheap process capable to handle large areas. Even though colloidal lithography does not provide a perfect geometrical arrangement like e-beam lithography, it produces a very homogeneous mask in terms of nanohole diameter and density, and is used here for the firs...

  17. Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications

    Science.gov (United States)

    Trybus, Elaissa

    The objective of the proposed research is to establish the technology for material growth by molecular beam epitaxy (MBE) and fabrication of indium gallium nitride/gallium nitride (InxGa1-xN/GaN) heterojunction solar cells. InxGa1-xN solar cells have the potential to span 90% of the solar spectrum, however there has been no success with high indium (In) incorporation and only limited success with low In incorporation InxGa1-xN. Therefore, this present work focuses on 15--30% In incorporation leading to a bandgap value of 2.3--2.8 eV. This work will exploit the revision of the indium nitride (InN) bandgap value of 0.68 eV, which expands the range of the optical emission of nitride-based devices from ultraviolet to near infrared regions, by developing transparent In xGa1-xN solar cells outside the visible spectrum. Photovoltaic devices with a bandgap greater than 2.0 eV are attractive because over half the available power in the solar spectrum is above the photon energy of 2.0 eV. The ability of InxGa1-xN materials to optimally span the solar spectrum offers a tantalizing solution for high-efficiency photovoltaics. This work presents results confirming the revised bandgap of InN grown on germanium (Ge) substrates and the effects of oxygen contamination on the bandgap. This research adds to the historical discussion of the bandgap value of InN. Using the metal modulated epitaxy (MME) technique in a new, ultra-clean refurbished MBE system, an innovative growth regime is established where In and Ga phase separation is diminished by increasing the growth rate for In xGa1-xN. The MME technique modulates the metal shutters with a fixed duty cycle while maintaining a constant nitrogen flux and proves effective for improving crystal quality and p-type doping. InxGa 1-xN/GaN heterojunction solar cells require p-type doping to create the p-n subcell collecting junction, which facilitates current collection through the electrostatic field created by spatially separated ionized

  18. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

    Science.gov (United States)

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

    2016-05-01

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

  19. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

    Science.gov (United States)

    Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

    1987-01-01

    GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

  20. Effect of N2 microplasma treatment on initial growth of GaN by metal–organic molecular beam epitaxy

    Science.gov (United States)

    Suzuki, Yohei; Kusakabe, Yasuhiro; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya; Shimizu, Kazuo

    2016-08-01

    N2 atmospheric microplasma was applied to improve the yields and reproducibility of the initial growth of GaN by metal–organic molecular beam epitaxy (MOMBE). The plasma treatment was found to be effective in cleaning the surface, and excellent flat growth was achieved even in the early stage of the growth. The effect of the air exposure after plasma treatment was also studied, and the yield of the growth was found to be largely decreased by the air exposure even after the treatment. Therefore, the oxidation of the substrate is one of main causes of the poor initial growth and the installation of the microplasma equipment in the MBE loading chamber is useful for suppressing the oxidation after the treatment. Atomic force microscopy (AFM) measurement shows that the microplasma treatment is also effective for undoing the surface double steps through etching, which is helpful for a very smooth layer-by-layer growth in the early stage of growth.

  1. Evolution of self-assembled InAs/Gas(001) quantum dots grown by growth-interrupted molecular beam epitaxy

    OpenAIRE

    Balzarotti, A.

    2008-01-01

    Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is quantitatively described by a rate-equation kinetic model. The volume density of small Q3D QDs decreases exponentially with time during the interruption, while the single-dot mean volume of the large QDs increases by Ostwald ripening. The kinetics of growth involves c...

  2. Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, M. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)], E-mail: Ming.Zhao@imec.be; Karim, A.; Hansson, G.V. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Ni, W.-X. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); National Nano Device Laboratories, Hsinchu 30078, Taiwan, ROC (China); Townsend, P.; Lynch, S.A.; Paul, D.J. [Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE (United Kingdom)

    2008-11-03

    A Si/SiGe bound-to-continuum quantum cascade design for THz emission was grown using solid-source molecular beam epitaxy on Si{sub 0.8}Ge{sub 0.2} virtual substrates. The growth parameters were carefully studied and several samples with different boron doping concentrations were grown at optimized conditions. Extensive material characterizations revealed a high crystalline quality of the grown structures with an excellent growth control. Layer undulations resulting from a nonuniform strain field, introduced by high doping concentration, were observed. The device characterizations suggested that a modification on the design was needed in order to enhance the THz emission.

  3. Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry.

    OpenAIRE

    Hegarty, John

    1995-01-01

    PUBLISHED In situ optical reflectometry at the wavelength of 488 nm was employed to control the growth of MgZnSSe/ZnSSe Bragg mirror stacks for the blue-green spectral region. 10- and 20-period layer structures of MgZnSSe/ZnSSe were grown on GaAs ~100! epilayers by molecular beam epitaxy. A room-temperature peak reflectance of 86% was obtained for the 20-period structure at the central wavelength of 474 nm. The results show that, in general, in situ optical monitoring of growth...

  4. Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Abernathy, C.R.; Pearton, S.J.; Baiocchi, F.A.; Ambrose, T.; Jordan, A.S. (AT and T Bell Labs., Murray Hill, NJ (USA)); Bohling, D.A.; Muhr, G.T. (Air Products and Chemicals, Inc., Allentown, PA (USA))

    1991-03-01

    We have investigated the effect of V/III ratio and substrate temperature on the growth rate, Al composition, crystallinity, and impurity concentration of AlGaAs grown by metalorganic molecular beam epitaxy (MOMBE). The effect of these growth parameters on the deposition rates of both GaAs and AlAs has also been determined. By comparing films grown from various combinations of triethylgallium (TEGa), trimethylgallium (TMGa), triethylaluminium (TEA), and trimethylamine alane (TMAAl), we have been able to further identify the surface reactions which are most important in determining film composition and quality. (orig.).

  5. Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy

    Science.gov (United States)

    Abernathy, C. R.; Pearton, S. J.; Baiocchi, F. A.; Ambrose, T.; Jordan, A. S.; Bohling, D. A.; Muhr, G. T.

    1991-03-01

    We have investigated the effect of V/III ratio and substrate temperature on the growth rate, Al composition, crystallinity, and impurity concentration of AlGaAs grown by metalorganic beam epitaxy (MOMBE). The effect of these growth parameters on the deposition rates of both GaAs and AlAs has also been determined. By comparing films grown from various combinations of triethylgallium (TEGa), trimethylgallium (TMGa), triethylaluminum (TEAl), and trimethylamine alane (TMAA1), we have been able to further identity the surface reactions which are most important in determining film composition and quality.

  6. Growth of GaSb1-xBix by molecular beam epitaxy

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Roy, Ivy Saha;

    2012-01-01

    concentration in the samples was found to increase with increasing growth temperature and Bi flux. The position of GaSb1-xBix layer peak in XRD rocking curves is found to be correlated to Bi composition. Surface and structural properties of the samples were also investigated. Samples grown on GaSb and Ga......Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorporation of Bi in GaSb was found. Strategies of avoiding formation of Bi droplets and enhancing Bi incorporation were studied. The Bi incorporation was confirmed by SIMS and RBS measurements. The Bi...

  7. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    OpenAIRE

    Wang Yongjin; Hu Fangren; Hane Kazuhiro

    2011-01-01

    Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place wit...

  8. High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

    Science.gov (United States)

    Freundlich, A.; Newman, F.; Monier, C.; Street, S.; Dargan, P.; Levy, M.

    2005-01-01

    In this work it is shown that high quality GaAs photovoltaic devices can be produced by Molecular Beam Epitaxy (MBE) with growth rates comparable to metal-organic chemical vapor deposition (MOCVD) through the subsitution of group III solid sources by metal-organic compounds. The influence the III/V flux-ratio and growth temperatures in maintaining a two dimensional layer by layer growth mode and achieving high growth rates with low residual background impurities is investigated. Finally subsequent to the study of the optimization of n- and p doping of such high growth rate epilayers, results from a preliminary attempt in the fabrication of GaAs photovoltaic devices such as tunnel diodes and solar cells using the proposed high growth rate approach are reported.

  9. The growth of high-quality AlGaAs by metalorganic molecular-beam epitaxy

    Science.gov (United States)

    Hersee, S. D.; Martin, P. A.; Chin, A.; Ballingall, J. M.

    1991-07-01

    The electrical and optical properties of AlGaAs grown by metalorganic molecular-beam epitaxy using triethylaluminum, tri-isobutylaluminum, and trimethylamine-alane are compared. It is found that tri-isobutylaluminum yields the lowest residual carbon incorporation in the layers (Na - Nd = 4 × 1015 cm-3) and the highest electron and hole mobilities. Photoluminescence spectra for the higher-quality AlGaAs, grown using TiBAl, show excitonic luminescence. However, this luminescence appears to be defect related.

  10. Laser molecular beam epitaxy growth and properties of SrTiO3 thin films for microelectronic applications

    International Nuclear Information System (INIS)

    Dielectric SrTiO3 thin films were deposited on LaAlO3 and Si substrates using laser molecular beam epitaxy. The correlations between the deposition parameters of SrTiO3 thin films, their structural characteristics, and dielectric properties were studied. The conditions for achieving epitaxial SrTiO3 thin films were found to be limited to deposition conditions such as deposition temperature. We show that the SrTiO3 films with single (110) orientation can be grown directly on Si substrates. The nature of epitaxial growth and interfacial structures of the grown films were examined by various techniques, such as Laue diffraction and X-ray photoelectron spectroscopy. The SrTiO3/Si interface was found to be epitaxially crystallized without any SiO2 layer. Furthermore, we have measured dielectric properties of the grown SrTiO3 multilayer suitable for tunable microwave device. A large tunability of 74.7%, comparable to that of SrTiO3 single-crystal, was observed at cryogenic temperatures. Such STO thin films will be very promising for the development of microelectronic device applications

  11. The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    This paper reports the growth of InGaN/GaN/AlN epitaxial layer on Si(1 1 1) substrate by utilizing plasma-assisted molecular beam epitaxy (PA-MBE) system. The as-grown film was characterized using high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). High work function metals, iridium and gold were deposited on the film as metal contacts and their electrical characteristics at pre- and post-annealing were studied. The structural quality of this film is comparative to the values reported in the literature, and the indium molar fraction is 0.57 by employing Vegard's law. The relatively low yellow band emission signifies the grown film is of high quality. For metal contact studies it was found that the post-annealed sample for 5 min shows good conductivity as compared to the other samples.

  12. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

    Science.gov (United States)

    Li, Yanbo; Zhang, Yang; Zhang, Yuwei; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

    2012-06-01

    We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (GaSb) defect.

  13. Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jyh-Shyang, E-mail: jswang@cycu.edu.tw [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Center for Nano-Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Tsai, Yu-Hsuan; Wang, Hsiao-Hua; Ke, Han-Xiang; Tong, Shih-Chang [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Chu-Shou [Graduate institute of Electro-Optical Engineering, Tatung University, Taipei 10452, Taiwan (China); Wu, Chih-Hung [Institute of Nuclear Energy Research, Longtan 32546, Taiwan (China); Shen, Ji-Lin [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Center for Nano-Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China)

    2013-04-01

    This work demonstrates the improvement of the molecular beam epitaxial growth of zinc-blende CdSe on (0 0 1) GaAs substrate with a large lattice mismatch by introducing a small amount of Te atoms. Exposing the growing surface to Te atoms changes the reflection high-energy electron diffraction pattern from spotty to streaky together with (2 × 1) surface reconstruction, and greatly reduces the full width at half maximum of the X-ray rocking curve and increases the integral intensity of room-temperature photoluminescence by a factor of about nine.

  14. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    Science.gov (United States)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-08-01

    We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  15. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Zheng, Jian-Guo; Liu, Jianlin

    2016-07-01

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5-6 nm)/G (26-27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ˜2.5-3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  16. InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties

    International Nuclear Information System (INIS)

    Vertically c-axis-aligned InGaN nanorod arrays were synthesized on c-plane sapphire substrates by radio-frequency molecular beam epitaxy. In situ reflection high-energy electron diffraction was used to monitor the growth process. X-ray diffraction, transmission electron microscopy, field-emission scanning electron microscope, and photoluminescence were used to investigate the structural and optical properties of the nanorods. The growth mechanism was studied and a growth model was proposed based on the experimental data. A red shift of photoluminescence spectrum of InGaN nanorods with increasing growth time was found and attributed to the partial release of stress in the InGaN nanorods.

  17. Growth of GaNAs/GaAs multiple quantum well by molecular beam epitaxy using modulated N radical beam source

    International Nuclear Information System (INIS)

    GaNAs/GaAs multiple quantum well (MQW) structures have been grown on GaAs(001) substrates by molecular beam epitaxy (MBE) using modulated N radical beam source under optimized conditions, wherein the amount of N2 gas flow, RF-power and shutter sequence are systematically controlled. Clear and flat GaNAs/GaAs interfaces were observed in the cross-sectional transmission electron microscopy (TEM) measurements. Fine MQW structures originating from the precise control of the modulated N radical beam have been demonstrated as clear satellite peaks from the X-ray diffraction (XRD) measurements and sharp photoluminescence (PL) peaks. The step-like behaviors in the absorption spectra which reflect the density of state in two-dimensional systems, were clearly observed for all MQW samples. (authors)

  18. Crack healing during molecular-beam-epitaxy growth of GaP/GaAs thin films

    International Nuclear Information System (INIS)

    A crack-healing phenomenon occurring during epitaxial growth of GaP films on a GaAs substrate was studied by transmission electron microscopy. The process is driven by a decrease in the surface energy of the cracked film. The results indicate that the fundamental mechanism operating during healing is the deposition and diffusion of Ga and P atoms onto the crack surface in the GaP lattice, combined with self-diffusion of GaAs within the crack tip in the GaAs substrate. This process is not fully completed in the GaP/GaAs system; unhealed crack tips located in the GaAs substrate always remain in the structure. Development of cracks and subsequent crack healing during film growth lead to a decrease in residual stress in the film. New cracks are formed at an equilibrium spacing which increases with increasing film thickness. A modified expression for predicting the relation between crack spacing and film thickness in epitaxial films is proposed

  19. Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane

    Science.gov (United States)

    Abernathy, C. R.; Jordan, A. S.; Pearton, S. J.; Hobson, W. S.; Bohling, D. A.; Muhr, G. T.

    1990-06-01

    AlGaAs grown by metalorganic molecular beam epitaxy (MOMBE) has been problematic due to oxygen and carbon contamination, particularly when triethylaluminum (TEAl) has been used as the aluminum source. Consequently, we have investigated trimethylamine alane (TMAAl) as a potential replacement for the conventional metalorganic Al sources. AlGaAs films with excellent structural and optical properties have been grown with this source. Photoluminescence intensities from AlGaAs grown by MOMBE at 500 °C using TMAAl are comparable to those from material grown by metalorganic chemical vapor deposition at 675 °C using triethylaluminum (TMAl). Carbon and oxygen levels in MOMBE-grown AlGaAs are drastically reduced in comparison to similar films grown with TEAl.

  20. Effects of substrate anisotropy and edge diffusion on submonolayer growth during molecular beam epitaxy: A Kinetic Monte Carlo study

    International Nuclear Information System (INIS)

    We have performed Kinetic Monte Carlo simulation work to study the effect of diffusion anisotropy, bonding anisotropy and edge diffusion on island formation at different temperatures during the sub-monolayer film growth in Molecular Beam Epitaxy. We use simple cubic solid on solid model and event based Bortz, Kalos and Labowitch (BKL) algorithm on the Kinetic Monte Carlo method to simulate the physical phenomena. We have found that the island morphology and growth exponent are found to be influenced by substrate anisotropy as well as edge diffusion, however they do not play a significant role in island elongation. The growth exponent and island size distribution are observed to be influenced by substrate anisotropy but are negligibly influenced by edge diffusion. We have found fractal islands when edge diffusion is excluded and compact islands when edge diffusion is included. (author)

  1. Molecular-beam epitaxy growth and structural characterization of semiconductor-ferromagnet heterostructures by grazing incidence X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Satapathy, D.K.

    2005-12-19

    The present work is devoted to the growth of the ferromagnetic metal MnAs on the semiconductor GaAs by molecular-beam epitaxy (MBE). The MnAs thin films are deposited on GaAs by molecular-beam epitaxy (MBE). Grazing incidence diffraction (GID) and reflection high-energy electron diffraction (RHEED) are used in situ to investigate the nucleation, evolution of strain, morphology and interfacial structure during the MBE growth. Four stages of the nucleation process during growth of MnAs on GaAs(001) are revealed by RHEED azimuthal scans. GID shows that further growth of MnAs films proceed via the formation of relaxed islands at a nominal thickness of 2.5 ML which increase in size and finally coalesce to form a continuous film. Early on, an ordered array of misfit dislocations forms at the interface releasing the misfit strain even before complete coalescence occurs. The fascinating complex nucleation process of MnAs on GaAs(0 0 1) contains elements of both Volmer-Weber and Stranski-Krastanov growth. A nonuniform strain amounting to 0.66%, along the [1 -1 0] direction and 0.54%, along the [1 1 0] direction is demonstrated from x-ray line profile analysis. A high correlation between the defects is found along the GaAs[1 1 0] direction. An extremely periodic array of misfit dislocations with a period of 4.95{+-}0.05 nm is formed at the interface along the [1 1 0] direction which releases the 7.5% of misfit. The inhomogeneous strain due to the periodic dislocations is confined at the interface within a layer of 1.6 nm thickness. The misfit along the [1 -1 0] direction is released by the formation of a coincidence site lattice. (orig.)

  2. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Koblmueller, G; Hertenberger, S; Vizbaras, K; Bichler, M; Abstreiter, G [Walter Schottky Institut and Physik Department, Technische Universitaet Muenchen, 85748 Garching (Germany); Bao, F; Zhang, J-P, E-mail: Gregor.Koblmueller@wsi.tum.de [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215125 Suzhou (China)

    2010-09-10

    We report self-induced growth of vertically aligned (i.e. along the [111] direction), free-standing InAs nanowires on Si(111) substrates by solid-source molecular beam epitaxy. Implementation of an ultrathin amorphous SiO{sub x} mask on Si(111) facilitated epitaxial InAs nanowire growth, as confirmed by high-resolution x-ray diffraction 2{theta}-{omega} scans and transmission electron microscopy. Depending on growth temperature (in the range of 400-520 deg. C) substantial size variation of both nanowire length and diameter was found under preservation of uniform, non-tapered hexagon-shaped geometries. The majority of InAs nanowires exhibited phase-pure zinc blende crystal structure with few defective regions consisting of stacking faults. Photoluminescence spectroscopy at 20 K revealed peak emission of the InAs nanowires at 0.445 eV, which is {approx} 30 meV blueshifted with respect to the emission of the bulk InAs reference due to radial quantum confinement effects. These results show a promising route towards integration of well-aligned, high structural quality InAs-based nanowires with the desired aspect ratio and tailored emission wavelengths on an Si platform.

  3. Molecular beam epitaxial growth of ultrathin CdTe-CdMnTe quantum wells and their characterization

    Science.gov (United States)

    Waag, A.; Schmeusser, S.; Bicknell-Tassius, R. N.; Yakovlev, D. R.; Ossau, W.; Landwehr, G.; Uraltsev, I. N.

    1991-12-01

    We report the growth and optical characterization of CdTe/CdMnTe single quantum wells with well thicknesses ranging from 60 down to 6 Å. The single quantum wells were grown by standard molecular beam epitaxy without growth interruption and investigated by reflection, photoluminescence (PL), and excitation PL. All structures including the 6-Å-thick quantum well exhibit extraordinarily narrow photoluminescence lines. From an analysis of linewidth and Stokes shift of the photoluminescence lines informations on the structure of the CdTe/CdMnTe interfaces are derived. The good quality of those structures made it possible to identify for the first time recombination of two-dimensional free exciton magnetic polarons.

  4. Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy

    International Nuclear Information System (INIS)

    We have quantitatively studied the temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy using secondary ion mass spectroscopy. It was found that a significant number of Er atoms segregate to the growing surface at temperatures of 400°C and above and that the segregation decay length is approximately 0.5 µm at 500°C, indicating that the incorporation ratio of Er atoms into GaAs is less than 10-3. In contrast to the growth at higher temperatures, GaAs overlayer growth at a temperature as low as 300°C is effective in suppressing the surface segregation of Er and obtaining δ-doped structures. (author)

  5. Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

    Science.gov (United States)

    Benyahia, D.; Kubiszyn, Ł.; Michalczewski, K.; Kębłowski, A.; Martyniuk, P.; Piotrowski, J.; Rogalski, A.

    2016-01-01

    Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

  6. Growth morphology of MnAs epilayers on GaAs(1 1 1)-B substrates by molecular beam epitaxy

    Science.gov (United States)

    Etgens, V. H.; Eddrief, M.; Demaille, D.; Zheng, Y. L.; Ouerghi, A.

    2002-04-01

    MnAs epilayers were grown by molecular beam epitaxy on GaAs(1 1 1)B substrates. The morphology of epilayers has been studied by coupling several in situ techniques. Two distinct growth regimes were distinguished as a function of the substrate temperature. For the growth at 320°C, the system shows an intriguing mechanism of relaxation that produces MnAs isolated islands (the so-called "blocks") with constant height. The explanation for this mechanism associates the large mobility of atoms at this temperature with the strain due to the important misfit. At lower temperature (200°C) the surface mobility is greatly reduced which results in a more homogeneous film.

  7. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Wang Yongjin

    2011-01-01

    Full Text Available Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE. Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. PACS 81.05.Ea; 81.65.Cf; 81.15.Hi.

  8. Atomic Layer Epitaxy of h-BN(0001) Multilayers on Co(0001) and Molecular Beam Epitaxy Growth of Graphene on h-BN(0001)/Co(0001).

    Science.gov (United States)

    Driver, M Sky; Beatty, John D; Olanipekun, Opeyemi; Reid, Kimberly; Rath, Ashutosh; Voyles, Paul M; Kelber, Jeffry A

    2016-03-22

    The direct growth of hexagonal boron nitride (h-BN) by industrially scalable methods is of broad interest for spintronic and nanoelectronic device applications. Such applications often require atomically precise control of film thickness and azimuthal registry between layers and substrate. We report the formation, by atomic layer epitaxy (ALE), of multilayer h-BN(0001) films (up to 7 monolayers) on Co(0001). The ALE process employs BCl3/NH3 cycles at 600 K substrate temperature. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) data show that this process yields an increase in h-BN average film thickness linearly proportional to the number of BCl3/NH3 cycles, with BN layers in azimuthal registry with each other and with the Co(0001) substrate. LEED diffraction spot profile data indicate an average BN domain size of at least 1900 Å. Optical microscopy data indicate the presence of some domains as large as ∼20 μm. Transmission electron microscopy (TEM) and ambient exposure studies demonstrate macroscopic and microscopic continuity of the h-BN film, with the h-BN film highly conformal to the Co substrate. Photoemission data show that the h-BN(0001) film is p-type, with band bending near the Co/h-BN interface. Growth of graphene by molecular beam epitaxy (MBE) is observed on the surface of multilayer h-BN(0001) at temperatures of 800 K. LEED data indicate azimuthal graphene alignment with the h-BN and Co(0001) lattices, with domain size similar to BN. The evidence of multilayer BN and graphene azimuthal alignment with the lattice of the Co(0001) substrate demonstrates that this procedure is suitable for scalable production of heterojunctions for spintronic applications. PMID:26940024

  9. Growth study of chemical beam epitaxy of GaN xP 1 - x using NH 3 and tertiarybutylphosphine

    Science.gov (United States)

    Li, N. Y.; Wong, W. S.; Tomich, D. H.; Dong, H. K.; Solomon, J. S.; Grant, J. T.; Tu, C. W.

    1996-07-01

    A study in the growth of GaN xP 1 - x epilayers by chemical beam epitaxy using tertiarybutylphosphine (TBP), ammonia (NH 3), and elemental Ga or triethylgallium is reported. Monitoring reflection high-energy electron diffraction (RHEED) intensity oscillations, we observe that both group-III- and group-V-induced incorporation rates are increased when NH 3 is introduced into a single cracker with TBP. From the difference in the periods of group-V-induced RHEED intensity oscillations, a 16% N incorporation is expected, but X-ray rocking curve measurement shows only 0.08% N. Using separate TBP and NH 3 crackers results in no enhancement in incorporation rates. We conclude that the cracking efficiency of TBP is increased with NH 3 co-injection.

  10. Molecular beam epitaxial growth and characterization of Bi{sub 2}Se{sub 3}/II-VI semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zhiyi, E-mail: zchen2@ccny.cuny.edu; Zhao, Lukas; Krusin-Elbaum, Lia [Department of Physics, The City College of New York, CUNY, New York, New York 10031 (United States); The Graduate Center, CUNY, New York, New York 10016 (United States); Garcia, Thor Axtmann; Tamargo, Maria C. [The Graduate Center, CUNY, New York, New York 10016 (United States); Department of Chemistry, The City College of New York, CUNY, New York, New York 10031 (United States); Hernandez-Mainet, Luis C. [Department of Chemistry, The City College of New York, CUNY, New York, New York 10031 (United States); Deng, Haiming [Department of Physics, The City College of New York, CUNY, New York, New York 10031 (United States)

    2014-12-15

    Surfaces of three-dimensional topological insulators (TIs) have been proposed to host quantum phases at the interfaces with other types of materials, provided that the topological properties of interfacial regions remain unperturbed. Here, we report on the molecular beam epitaxy growth of II-VI semiconductor–TI heterostructures using c-plane sapphire substrates. Our studies demonstrate that Zn{sub 0.49}Cd{sub 0.51}Se and Zn{sub 0.23}Cd{sub 0.25}Mg{sub 0.52}Se layers have improved quality relative to ZnSe. The structures exhibit a large relative upward shift of the TI bulk quantum levels when the TI layers are very thin (∼6nm), consistent with quantum confinement imposed by the wide bandgap II-VI layers. Our transport measurements show that the characteristic topological signatures of the Bi{sub 2}Se{sub 3} layers are preserved.

  11. (111)-oriented Zn3N2 growth on a-plane sapphire substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    (111)-oriented Zn3N2 thin films were grown on a-plane (112-bar0) sapphire substrates by plasma-assisted molecular beam epitaxy. Zn3N2/sapphire exhibits orientational relationships of out-of-plane parallel [112-bar0] and in-plane almost parallel [0001] and parallel [0001]. These specific orientations result from similar surface configurations of N atoms in Zn3N2 and Al atoms in sapphire at the interface. Under the optimum growth conditions, the film showed a full width at half maximum of 185 arcsec for an X-ray (222) diffraction rocking curve and a root-mean-square roughness of 8.5 A in an atomic force microscope image. These results suggest that a-plane sapphire is a suitable heteroepitaxial substrate for high-quality Zn3N2 thin films. (author)

  12. Growth of ErAs nanodots by molecular beam epitaxy for application to tunneling junctions in multijunction solar cells

    Science.gov (United States)

    Hung, Chao-Yu; Sogabe, Tomah; Miyashita, Naoya; Okada, Yoshitaka

    2016-02-01

    ErAs nanodots (NDs) grown on GaAs(001) substrates by using molecular beam epitaxy (MBE) were investigated. Atomic force microscope images indicate that the size of ErAs NDs increases with deposition time and growth temperature. A calibration was performed to determine the deposition rate of ErAs in order that the size of NDs can be accurately controlled and hence optimized. Local current flow images and surface profiles around ErAs NDs were simultaneously measured to clarify the local conductivity distribution corresponding to a real space profile. Furthermore, we also fabricated and characterized an ErAs-ND-embedded GaAs tunnel junction (TJ), which resulted in a voltage drop of 30 mV for 15 A/cm2 operation current equivalent to 1000 suns concentration, which is less than one-third of that of a conventional heavily doped tunnel junction.

  13. Short-pulse chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Suian; Cui, Jie; Aoyagi, Yoshinobu (RIKEN, The Institute of Physical and Chemical Research, Saitama (Japan)); Tanaka, Akihiko (Bentec Co., Tokyo (Japan))

    1994-03-10

    Short-pulse chemical beam epitaxy has been proposed and studied. The short pulses with supersonic characteristics and a width of milliseconds were generated by high speed valves and the related pumping lines on a purpose-built CBE system. Using a time-of-fight technique, we verified the dependence of pulse properties on the source pressures and the valve on-time. The results indicate that modulation of molecular kinetic energy and accurate control of molecule supply were obtained. GaAs epitaxial growth with use of trimethylgallium pulses was carried out and investigated by means of RHEED (reflection high-energy electron diffraction) observation. It was demonstrated that the newly developed short-pulse chemical beam epitaxy has the advantage of high controllability

  14. Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

    OpenAIRE

    Shuo-Ting You; Ikai Lo; Jenn-Kai Tsai; Cheng-Hung Shih

    2015-01-01

    We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 ) by scanning transmission electron microscope, we found t...

  15. Growth of high-quality SrTiO{sub 3} films using a hybrid molecular beam epitaxy approach

    Energy Technology Data Exchange (ETDEWEB)

    Jalan, Bharat; Engel-Herbert, Roman; Wright, Nicholas J.; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2009-05-15

    A hybrid molecular beam epitaxy approach for atomic-layer controlled growth of high-quality SrTiO{sub 3} films with scalable growth rates was developed. The approach uses an effusion cell for Sr, a plasma source for oxygen, and a metal-organic source (titanium tetra isopropoxide) for Ti. SrTiO{sub 3} films were investigated as a function of cation flux ratio on (001) SrTiO{sub 3} and (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates. Growth conditions for stoichiometric insulating films were identified. Persistent (>180 oscillations) reflection high-energy electron diffraction oscillation characteristic of layer-by-layer growth were observed. The full widths at half maximum of x-ray diffraction rocking curves were similar to those of the substrates, i.e., 34 arc sec on LSAT. The film surfaces were nearly ideal with root mean square surface roughness values of less than 0.1 nm. The relationship between surface reconstructions, growth modes, and stoichiometry is discussed.

  16. Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach

    International Nuclear Information System (INIS)

    A hybrid molecular beam epitaxy approach for atomic-layer controlled growth of high-quality SrTiO3 films with scalable growth rates was developed. The approach uses an effusion cell for Sr, a plasma source for oxygen, and a metal-organic source (titanium tetra isopropoxide) for Ti. SrTiO3 films were investigated as a function of cation flux ratio on (001) SrTiO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. Growth conditions for stoichiometric insulating films were identified. Persistent (>180 oscillations) reflection high-energy electron diffraction oscillation characteristic of layer-by-layer growth were observed. The full widths at half maximum of x-ray diffraction rocking curves were similar to those of the substrates, i.e., 34 arc sec on LSAT. The film surfaces were nearly ideal with root mean square surface roughness values of less than 0.1 nm. The relationship between surface reconstructions, growth modes, and stoichiometry is discussed.

  17. Epitaxial silicon nanowire growth catalyzed by gold dot arrays from electron beam lithography patterning using silane precursors

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Bjoern; Broenstrup, Gerald; Huebner, Uwe; Christiansen, Silke [Institut fuer Photonische Technologien e.V., Abt. Halbleiter Nanostrukturen, Jena (Germany)

    2010-07-01

    Ordered arrays of silicon nanowires (SiNWs) are promising building blocks for a variety of photonic, photovoltaic and sensor applications. In our approach to create SiNWs we use electron beam lithography (EBL) and thermal metal evaporation to create nano-patterned arrays of gold nanodots on a Si(111) wafer. These Au dots are subsequently used to catalyze the bottom-up growth of SiNWs that follow the vapor-liquid-solid (VLS) growth mechanism using silane in a CVD reactor. The grown nanowires are characterized structurally using SEM, TEM and electron backscatter diffraction (EBSD). We observe epitaxial growth of the SiNWs on the Si(111) wafer and we are able to control the growth direction to be either dominated by <111> or <112> directions by just changing the silane partial pressure. The lengths as well as the diameters of the wires are precisely controlled by the EBL Au dot patterning and CVD parameters. To predict wire diameters modelling is carried out that takes into account the EBL- and CVD-parameters and describes the observed experimental results very well. Furthermore we were able to create single crystalline Au-dot arrays which are very promising structures for surface enhanced raman spectroscopy (SERS) substrates.

  18. Effects of growth temperature on nonpolar a-plane InN grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Nonpolar a-plane InN films were grown on r-plane sapphire substrate by plasma assisted molecular beam epitaxy with GaN underlayer. Effect of growth temperature on structural, morphological, and optical properties has been studied. The growth of nonpolar a-plane (1 1 -2 0) orientation was confirmed by high resolution X-ray diffraction study. The film grown at 500 C shows better crystallinity with the rocking curve FWHM 0.67 and 0.85 along [0 0 0 1] and [1 -1 0 0] directions, respectively. Scanning electron micrograph shows formation of Indium droplets at higher growth temperature. Room tem-perature absorption spectra show growth temperature dependent band gap variation from 0.74-0.81 eV, consistent with the expected Burstein-Moss effect. The rectifying behaviour of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Growth model investigation for AlN/Al(Ga)InN interface growth by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications

    Energy Technology Data Exchange (ETDEWEB)

    Aidam, Rolf; Diwo, Elke; Godejohann, Birte-Julia; Kirste, Lutz; Quay, Ruediger; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2014-12-01

    Heterostructures with lattice matched Al(Ga)InN barriers have been widely investigated as alternative to standard AlGaN/GaN based high electron mobility transistor structures for high power applications. Mostly these heterostructures comprise a thin AlN based spacer between GaN channel and lattice matched barrier. One key issue for high quality plasma-assisted molecular beam epitaxy (PA-MBE) of these structures is the control of the AlN-Al(Ga)InN interface since optimal growth conditions for high quality AlN differ significantly from those for growth of indium containing material. In this paper, a detailed analysis and a deduced model of the interface growth is presented. The Al/N ratio during AlN spacer growth is likely to influence the subsequent growth of quaternary Al(Ga)InN. Ideal Al/N ratio leads to high performance heterostructures, while slightly Al-rich conditions lead to the formation of Al residues on the substrate surface, which hinder subsequent epitaxial growth. Al/N ratios below unity lead to the deposition of ternary AlGaN instead of binary AlN spacers and to increased alloy scattering. An insertion of a thin GaN layer between spacer and barrier can hinder the formation of Al residues and leads to improved wafer homogeneity. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions

    Science.gov (United States)

    Arias, Jose; Zandian, M.; Pasko, J. G.; Shin, S. H.; Bubulac, L. O.; DeWames, R. E.; Tennant, W. E.

    1991-02-01

    In this paper we present, results on the growth of in situ doped p-on-n heterojunctions on HgCdTe epilayers grown on (211)B GaAs substrates by molecular-beam epitaxy (MBE). Long wavelength infrared (LWIR) photodiodes made with these grown junctions are of high performance. The n-type MBE HgCdTe/GaAs alloy epilayer in these structures was grown at Ts=185 °C and it was doped with indium (high 1014 cm-3 range) atoms. This epilayer was directly followed by the growth, at Ts=165 °C, of an arsenic-doped (1017-1018 cm-3 ) HgTe/CdTe superlattice structure which was necessary to incorporate the arsenic atoms as acceptors. After the structure was grown, a Hg annealing step was needed to interdiffuse the superlattice and obtain the arsenic-doped p-type HgCdTe layer above the indium-doped layer. LWIR mesa diodes made with this material have 77 K R0A values of 5×103, 81, 8.5, and 1.1 Ω cm2 for cutoff wavelengths of 8.0, 10.2, 10.8, and 13.5 μm, respectively; the 77 K quantum efficiency values for these diodes were greater than 55%. These recent results represent a significant step toward the demonstration of MBE as a viable growth technique for the in situ fabrication of large area LWIR focal plane arrays.

  1. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

    OpenAIRE

    S. S. Kushvaha; M. Senthil Kumar; K. K. Maurya; Dalai, M. K.; Nita D. Sharma

    2013-01-01

    Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM), micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS). The x-ray rocking curve full width at a half maximum (FWHM) value for (0002) ...

  2. Controllable Growth of Vertical Heterostructure GaTe(x)Se(1-x)/Si by Molecular Beam Epitaxy.

    Science.gov (United States)

    Liu, Shanshan; Yuan, Xiang; Wang, Peng; Chen, Zhi-Gang; Tang, Lei; Zhang, Enze; Zhang, Cheng; Liu, Yanwen; Wang, Weiyi; Liu, Cong; Chen, Chen; Zou, Jin; Hu, Weida; Xiu, Faxian

    2015-08-25

    Two dimensional (2D) alloys, especially transition metal dichalcogenides, have attracted intense attention owing to their band-gap tunability and potential optoelectrical applications. Here, we report the controllable synthesis of wafer-scale, few-layer GaTexSe1-x alloys (0 ≤ x ≤ 1) by molecular beam epitaxy (MBE). We achieve a layer-by-layer growth mode with uniform distribution of Ga, Te, and Se elements across 2 in. wafers. Raman spectroscopy was carried out to explore the composition-dependent vibration frequency of phonons, which matches well with the modified random-element-isodisplacement model. Highly efficient photodiode arrays were also built by depositing few-layer GaTe0.64Se0.36 on n-type Si substrates. These p-n junctions have steady rectification characteristics with a rectifying ratio exceeding 300 and a high external quantum efficiency around 50%. We further measured more devices on MBE-grown GaTexSe1-x/Si heterostructures across the full range to explore the composition-dependent external quantum efficiency. Our study opens a new avenue for the controllable growth of 2D alloys with wafer-scale homogeneity, which is a prominent challenge in 2D material research. PMID:26234804

  3. Room temperature epitaxial growth of Ag on low-index Si surfaces by a partially ionized beam

    Science.gov (United States)

    Nason, T. C.; You, L.; Lu, T.-M.

    1992-07-01

    The room temperature growth of 1000-1500 Å Ag films on HF-dipped Si substrates is studied as a function of self-ion (Ag+) energy during deposition. In all cases the films contained a mixture of epitaxial grains and randomly oriented (111) grains. The orientations observed were Ag(111)/Si(111) with both type A (Ag//Si) and type B (Ag//Si) twins; Ag(110)/Si(110) with Ag//Si; and Ag(100)/Si(100) with Ag//Si. All three constructions match three Si atomic rows with four Ag rows. As judged by the ratio of epitaxial to nonepitaxial grains, the strength of the epitaxy was seen to decrease in the order (111)≳(110)≳(100). Increasing the Ag+ ion energy during the deposition was generally seen to decrease this ratio. Annealing of the Ag/Si(100) films induced preferential (100) grain growth.

  4. Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth

    International Nuclear Information System (INIS)

    Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices.

  5. Gas Source Melecular Beam Epitaxy Growth of High Quality AlGaAs Using Trimethylamine Alane as the Aluminum Source

    Science.gov (United States)

    Okamoto, Naoya; Ando, Hideyasu; Sandhu, Adarsh; Fujii, Toshio

    1991-12-01

    We investigated the dependence of the background impurity incorporation on growth conditions and optical properties of undoped AlGaAs grown by gas source molecular beam epitaxy using trimethylamine alane (TMAAl), triethylgallium, and arsine. The use of TMAAl enabled us to reduce the carbon concentration (7× 1016 cm-3) to over one order of magnitude less than that using triethylaluminum (TEAl). The 77 K photoluminescence spectrum of undoped AlGaAs grown using TMAAl was dominated by excitonic band-edge emission not observable in AlGaAs grown using TEAl. Furthermore, we report for the first time the doping characteristics of n-type AlGaAs grown using disilane (Si2H6) as an n-type gaseous dopant source together with TMAAl. The carrier concentration (5× 1017--3× 1018 cm-3) in n-AlxGa1-xAs (x{=}0.09--0.27) was reliably controlled and showed the same Si2H6 flow rate dependence as that of GaAs. The activation efficiency of silicon was more than 60%. We demonstrated the excellent n-type doping characteristics by uisng TMAAl.

  6. Growth and characterization of molecular beam epitaxy-grown Bi2Te3-xSex topological insulator alloys

    Science.gov (United States)

    Tung, Y.; Chiang, Y. F.; Chong, C. W.; Deng, Z. X.; Chen, Y. C.; Huang, J. C. A.; Cheng, C.-M.; Pi, T.-W.; Tsuei, K.-D.; Li, Z.; Qiu, H.

    2016-02-01

    We report a systematic study on the structural and electronic properties of Bi2Te3-xSex topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi2Se3 to Bi2Te3 was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi2Te3-xSex films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangular terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi2Te3-xSex with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBE growth conditions, Bi2Te3-xSex thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound.

  7. Growth and characterization of molecular beam epitaxy-grown Bi2Te3−xSex topological insulator alloys

    International Nuclear Information System (INIS)

    We report a systematic study on the structural and electronic properties of Bi2Te3−xSex topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi2Se3 to Bi2Te3 was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi2Te3−xSex films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangular terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi2Te3−xSex with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBE growth conditions, Bi2Te3−xSex thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound

  8. Epitaxial growth of Fe3Si/CaF2/Fe3Si magnetic tunnel junction structures on CaF2/Si(111) by molecular beam epitaxy

    International Nuclear Information System (INIS)

    The Fe3Si(24 nm)/CaF2(2 nm)/Fe3Si(12 nm) magnetic tunnel junction (MTJ) structures were grown epitaxially on CaF2/Si(111) by molecular beam epitaxy (MBE). The 12-nm-thick Fe3Si underlayer was grown epitaxially on CaF2/Si(111) at approximately 400 deg. C; however, the surface of the Fe3Si film was very rough, and thus a lot of pinholes are considered to exist in the 2-nm-thick CaF2 barrier layer. The average roughness (Ra) of the CaF2 barrier layer was 7.8 nm. This problem was overcome by low-temperature deposition of Fe and Si at 80 deg. C on CaF2/Si(111), followed by annealing at 250 deg. C for 30 min to form the Fe3Si layer. The Ra roughness was significantly reduced down to approximately 0.26 nm. A hysteresis loop with coercive field Hc of approximately 25 Oe was obtained in the magnetic field dependence of Kerr rotation at room temperature (RT)

  9. Growth and stuctural characterization of InGaN layers with controlled In content prepared by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    InGaN layers with controlled In composition up to 30 at.% are grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By considering the growth rate differences in GaN and InN caused by different vapor pressure and sticking coefficient, factors of the Ga and In source fluxes for the targeted In composition are determined. By applying the factors, InGaN layers with the almost same In compositions are grown. Before the growth the substrates were nitrided by rf-nitrogen plasma, which resulted in the formation of epitaxial AlN layer. The growth of thin GaN on this AlN surface shows strong streaky reflection high energy electron diffraction pattern with a specular spot, however, InGaN layers on the GaN layer show spotty patterns. Surface morphology of the InGaN layers shows island-like granules and the granule-like morphology is getting clear as the In composition and roughness are increased, too. The InGaN layers with In composition up to 30 at.% do not show formation of InN and only InGaN peaks are detected from the X-ray diffraction. Crystal quality of the InGaN layer with In composition of 15 at.% is worse than that of 30 at.%-In layer as addressed by larger broadening of X-ray rocking curves. - Highlights: ► Growth of InGaN epilayers by molecular beam epitaxy ► InGaN epilayers with In content up to 30 at.% without secondary phase formation. ► Controlled In content to the targeted content from the experimental set-up. ► Nitridation process of sapphire substrate to formed epitaxial AlN layer. ► Growth mode and structural characterization of InGaN layers

  10. Direct growth of hexagonal InN films on 6H-SiC by radio-frequency metal-organic molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Wurtzite InN films were prepared on a 6H-SiC substrate by a self-designed plasma-assisted metal-organic molecular-beam epitaxy system without a buffer layer. In this article, the authors investigate the structural and optical properties of InN films grown on a 6H-SiC substrate. The crystallinity and microstructure of the thin film were further characterized by x-ray diffraction (XRD), field-emission scanning-electron microscopy, and transmission-electron microscopy. Electrical and optical properties were evaluated by Hall and photoluminescence (PL) measurements. XRD results indicate that InN film grown at 500 deg. C is epitaxially grown along the c-axis orientation. The two-dimensional growth mode is clearly shown in scanning-electron microscope images. Room-temperature PL spectra show that the emission peak is located at ∼0.83 eV due to the Burstein-Moss effect. In addition, the crystalline InN samples crack and peel away from the substrate at elevated growth temperature. This phenomenon may be attributed to lattice mismatch and grain coalescence while increasing the growth temperature. The narrow window of the growth temperature plays an important role in engineering the InN epitaxial growth.

  11. The growth of high quality CdTe on GaAs by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Reno, J.L.; Carr, M.J.; Gourley, P.L. (Sandia National Laboratories, Albuquerque, New Mexico 87185 (US))

    1990-03-01

    We have grown CdTe (111) on oriented and misoriented GaAs (100) and have characterized the layers by photoluminescence microscopy (PLM) and transmission electron microscopy (TEM). Photoluminescence microscopy showed a totally different type of defect structure for the oriented substrate than for the misoriented substrates. The CdTe grown on the misoriented substrates exhibited only threading dislocations. The CdTe grown on oriented GaAs showed fewer threading dislocations but exhibited a random structure of loops. The loop structure observed by PLM has been identified by TEM as the boundary between twinned crystallites which extend from the CdTe/GaAs interface to the CdTe surface. When viewed along the growth axis, these boundaries between the columnar twins appear as loops and segments. Surface roughness of the GaAs substrate contributes to the initial growth of twinned material. This leads to competitive growth between the twins and the creation of the observed columnar twins. We present for the first time the growth of CdTe on patterned GaAs substrates. By growing on oriented GaAs(100) substrates that had been patterned prior to growth with 12 {mu}m mesas, it is possible to grow material on the mesa top that is twin free and has a low dislocation density.

  12. Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation

    Science.gov (United States)

    Urakami, Noriyuki; Yamane, Keisuke; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

    2016-02-01

    This paper presents the growth of GaAsN pseudo-alloys by a surface nitridation method that consisted of a repeated cycle of nitridation of the GaAs (001) surface, growth interruption and growth of a GaAs overlayer. Surface reconstruction during the nitridation process changed from (2×4) to (1×4) and (3×4) phases above 540 °C with the increase of nitridation time, resulting in a higher N compositions of the alloys. It was revealed that an excessive nitridation resulted in the degradation of the photoluminescence (PL) intensity. While the N composition slightly decreased with the interruption time, less impact appeared on their crystallinity characterized by PL measurement. As a result, the N composition was controllable between 1% and 5% by the combination of growth temperatures (460-600 °C) and thicknesses of the GaAs overlayer (2-8 monolayers; MLs). The thickness of the GaAs overlayer should be designed over 4 ML to form a flat surface for the next nitridation process. The integrated PL intensity of GaAs0.97N0.03 alloys was increased by 7 times compared to the one grown by conventional growth method (continuous supply), indicating the improved crystalline quality of the GaAsN alloys.

  13. Growth of CdTe-CdMnTe heterostructures by molecular beam epitaxy

    Science.gov (United States)

    Bicknell-Tassius, Robert N.

    1991-08-01

    The successful MBE growth of CdMnTe-CdTe heterostructures and superlattices has demonstrated the feasibility of growing layered structures incorporating dilute magnetic semiconductor materials (DMS). These materials exhibit new and interesting properties. These properties allow the band-gap engineering to continue after the structure has been grown through the application of an external magnetic field. During the growth process the engineering can be accomplished through traditional means, i.e., through the choice of layer thickness and/or the choice of the strain state of the structure.

  14. Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

    Science.gov (United States)

    Liu, Jheng-Sin; Clavel, Michael B.; Pandey, Rahul; Datta, Suman; Meeker, Michael; Khodaparast, Giti A.; Hudait, Mantu K.

    2016-06-01

    The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fast Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current-voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley-Read-Hall generation-recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications.

  15. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 107 cm–2 and a root mean square roughness of less than 1 nm are obtained

  16. Perspective: Oxide molecular-beam epitaxy rocks!

    Directory of Open Access Journals (Sweden)

    Darrell G. Schlom

    2015-06-01

    Full Text Available Molecular-beam epitaxy (MBE is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  17. Perspective: Oxide molecular-beam epitaxy rocks!

    Energy Technology Data Exchange (ETDEWEB)

    Schlom, Darrell G., E-mail: schlom@cornell.edu [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  18. X-ray diffraction study of crystal growth dynamics during molecular-beam epitaxy of III-V semiconductors

    International Nuclear Information System (INIS)

    An experimental approach to crystal growth dynamics using surface-sensitive X-ray diffraction techniques is discussed. In crystal growth, two essentially different kinds of dynamics are involved. One is the evolution of a statistical structure averaged over the sample area under consideration. The other is the temporal fluctuation of local structures associated with elemental processes of crystal growth, such as the adsorption, desorption, and diffusion of adatoms. Over the past few decades, combination of a synchrotron X-ray beamlines and specially designed crystal growth systems has played a great role in situ studies of the dynamics of average structures during the epitaxial growth of crystalline films. The recent development of coherent X-ray sources has provided an opportunity to elucidate local structure fluctuation, which is also important for solving many technological problems in crystal growth including the control of the uniformity of self-assembled nanostructures and the suppression of defects. (author)

  19. Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Shuo-Ting You

    2015-12-01

    Full Text Available We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.

  20. A six-circle diffractometer system for synchrotron X-ray studies of surfaces and thin film growth by molecular beam epitaxy

    International Nuclear Information System (INIS)

    A new ultrahigh vacuum (UHV) surface diffractometer system equipped with molecular beam epitaxy (MBE) capabilities has been developed. It has a versatile 6-circle configuration for defining the diffraction geometry, and a three-axis translation stage for controlling the sample position. Rugged mechanical components are employed in the design to allow accurate diffraction measurements. Sample cooling is facilitated by passing liquid nitrogen into a reservoir in the base of a sample mount. The sample can be heated to very high temperatures by either direct current heating or electron beam bombardment. During film growth and processing, the sample temperature, monitored by thermocouples, can be continuously and rapidly varied between ∼110 K to above room temperature. A charge coupled device (CCD) camera, attached to the μ circle, allows rapid reciprocal space mapping for real time studies of sample growth and evolution during deposition and annealing. A beam stop and a baffle are implemented to minimize stray scattered radiation

  1. Very low-temperature epitaxial growth of Mn{sub 5}Ge{sub 3} and Mn{sub 5}Ge{sub 3}C{sub 0.2} films on Ge(111) using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Petit, Matthieu, E-mail: matthieu.petit@univ-amu.fr [Aix-Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille (France); Michez, Lisa [Aix-Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille (France); Dutoit, Charles-Emmanuel; Bertaina, Sylvain; Dolocan, Voicu O. [Aix-Marseille Université, CNRS, IM2NP UMR7334, 13397 Cedex 20 Marseille (France); Heresanu, Vasile [Aix-Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille (France); Stoffel, Mathieu [Université de Lorraine, UMR CNRS 7198, Institut Jean Lamour, BP 70239, 54506 Vandeuvre-lès-Nancy (France); Le Thanh, Vinh [Aix-Marseille Université, CNRS, CINaM UMR 7325, 13288 Marseille (France)

    2015-08-31

    C-doped Mn{sub 5}Ge{sub 3} compound is ferromagnetic at temperature up to 430 K. Hence it is a potential spin injector into group-IV semiconductors. Segregation and diffusion of Mn at the Mn{sub 5}Ge{sub 3}/Ge interface could severely hinder the efficiency of the spin injection. To avoid these two phenomena we investigate the growth of Mn{sub 5}Ge{sub 3} and C-doped Mn{sub 5}Ge{sub 3} films on Ge(111) substrates by molecular beam epitaxy at room-temperature. The reactive deposition epitaxy method is used to deposit these films. Reflection high energy electron diffraction, X-ray diffraction analysis, transmission electron microscopy and atomic force microscopy indicate that the crystalline quality is very high. Magnetic characterizations by superconducting quantum interference device and ferromagnetic resonance reinforce the structural analysis results on the thin film quality. - Highlights: • Epitaxial Mn{sub 5}Ge{sub 3} and C-doped Mn{sub 5}Ge{sub 3} films grown on Ge(111) at room temperature. • Mn{sub 5}Ge{sub 3} and C-doped Mn{sub 5}Ge{sub 3} films grown by reactive deposition epitaxy. • RHEED, XRD and TEM measurements show a very high crystallinity. • Magnetic measurements support the structural analysis in the crystalline quality. • Ferromagnetic resonance linewidth is very narrow (3.5 mT at RT)

  2. Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Del Río-De Santiago, A.; Méndez-García, V.H. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Martínez-Velis, I.; Casallas-Moreno, Y.L. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); López-Luna, E. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Yu Gorbatchev, A. [IICO-UASLP, Av. Karakorum 1470, Lomas 4a. Sección, San Luis Potosí, S.L.P. 78210, México (Mexico); López-López, M. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); Cruz-Hernández, E., E-mail: esteban.cruz@uaslp.mx [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico)

    2015-04-01

    Highlights: • The formation of different kind of nanostructures in GaMnAs layers depending on Mn concentration at relative HT-MBE is reported. In this Mn% range, it is found the formation of nanogrooves, nanoleaves, and nanowires. • It is shown the progressive photoluminescence transitions from purely GaAsMn zinc blende (for Mn% = 0.01) to a mixture of zinc blende and wurtzite GaAsMn (for Mn% = 0.2). • A critical thickness for the Mn catalyst effect was determined by RHEED. - Abstract: In the present work, we report on molecular beam epitaxy growth of Mn-doped GaAs films at the relatively high temperature (HT) of 530 °C. We found that by increasing the Mn atomic percent, Mn%, from 0.01 to 0.2, the surface morphology of the samples is strongly influenced and changes from planar to corrugated for Mn% values from 0.01 to 0.05, corresponding to nanostructures on the surface with dimensions of 200–300 nm and with the shape of leave, to nanowire-like structures for Mn% values above 0.05. From reflection high-energy electron diffraction patterns, we observed the growth mode transition from two- to three-dimensional occurring at a Mn% exceeding 0.05. The optical and electrical properties were obtained from photoluminescence (PL) and Hall effect measurements, respectively. For the higher Mn concentration, besides the Mn related transitions at approximately 1.41 eV, PL spectra sharp peaks are present between 1.43 and 1.49 eV, which we related to the coexistence of zinc blende and wurtzite phases in the nanowire-like structures of this sample. At Mn% of 0.04, an increase of the carrier mobility up to a value of 1.1 × 10{sup 3} cm{sup 2}/Vs at 77 K was found, then decreases as Mn% is further increased due to the strengthening of the ionized impurity scattering.

  3. Layer by layer growth of BaTiO 3 thin films with extremely smooth surfaces by laser molecular beam epitaxy

    Science.gov (United States)

    Wang, H. S.; Ma, K.; Cui, D. F.; Peng, Z. Q.; Zhou, Y. L.; Lu, H. B.; Chen, Z. H.; Li, L.; Yang, G. Z.

    1997-05-01

    Using pure ozone-assisted laser molecular beam epitaxy, we have grown c-axis-oriented single crystal BaTiO 3 thin films on SrTiO 3 substrates at temperatures ( Ts) of 400-750°C and under ambient gas pressures of 5 × 10 -5 to 1 × 10 -1 Pa, respectively. Stripy reflection high-energy electron diffraction (RHEED) patterns and regular RHEED intensity oscillations reveal the smooth surface and layer-by-layer epitaxial growth of the films. Scanning electron microscopy analysis shows that the films are free of pinholes, grain boundaries and outgrowths on the surface. In addition, we found a strong dependence of the film lattice constant c on Ts, which might be related to the strain in the film.

  4. Twenty years of molecular beam epitaxy

    Science.gov (United States)

    Cho, A. Y.

    1995-05-01

    The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

  5. Effect of high temperature thermal treatment of (100) γ-LiAlO2 substrate on epitaxial growth of ZnO films by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Non-polar ZnO thin films were fabricated on (100) γ-LiAlO2 substrates by plasma-assisted molecular beam epitaxy. The effect of high temperature thermal treatment of substrate on the crystalline orientation and quality of ZnO thin film was investigated. The film grown on (100) γ-LiAlO2 substrate without high temperature thermal treatment consists of domains of both polar and non-polar orientations as identified by the X-ray diffraction pattern. Using high temperature thermal treatment of substrate, the growth of polar ZnO has been suppressed effectively. Besides, high temperature thermal treatment of substrate improves the crystalline quality of epitaxial ZnO thin film, which exhibits a smaller full width at half maximum value of ZnO (101−0) diffraction peak and a weaker deep level emission of photoluminescence. The suppression of polar ZnO growth and the quality improvement of the epitaxial ZnO films are due to the improvement of surface morphology and roughness of the substrate upon high temperature treatment. - Highlights: • ZnO films are grown on (100) γ-LiAlO2 by plasma-assisted molecular beam epitaxy. • ZnO film grown on (100) γ-LiAlO2 without high temperature treatment is dual-oriented. • ZnO film grown on γ-LiAlO2 thermally-treated at 900 °C for 1 h is almost (101−0) oriented. • High-temperature thermal treatment of substrate improves ZnO crystalline quality

  6. Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

    Science.gov (United States)

    Kruse, J. E.; Lymperakis, L.; Eftychis, S.; Adikimenakis, A.; Doundoulakis, G.; Tsagaraki, K.; Androulidaki, M.; Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P.; Koukoula, T.; Kehagias, Th.; Komninou, Ph.; Konstantinidis, G.; Georgakilas, A.

    2016-06-01

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO2 mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

  7. Molecular Beam Epitaxy of LiMnAs

    OpenAIRE

    Novak, V.; Cukr, M.; Soban, Z.; Jungwirth, T.; Marti, X.; Holy, V.; Horodyska, P.; Nemec, P.

    2010-01-01

    We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many as fifteen growth cycles performed on the system to date.

  8. Optimization of VI/II pressure ratio in ZnTe growth on GaAs(0 0 1) by molecular beam epitaxy

    International Nuclear Information System (INIS)

    ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (RVI/II) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the RVI/II to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a RVI/II of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the RVI/II. The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a RVI/II of 4.0 and then increases at higher ratios. It is suggested that the most suitable RVI/II be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films.

  9. Epitaxial growth and exchange biasing of PdMn/Fe bilayers grown by ion-beam sputtering

    International Nuclear Information System (INIS)

    Epitaxial PdMn/Fe bilayer structures, in both a-axis PdMn(100)/Fe(001)/MgO(001) and c-axis PdMn(001)/Fe(001)/MgO(001) orientations, were grown by ion-beam sputtering. The a-axis samples were grown at low temperatures (T300 degreeC). Vibrating sample magnetometry measurements show that the as-grown a-axis samples do not have a measurable exchange bias while c-axis samples have an exchange bias field He∼33Oe. However, annealing at 230 degreeC for 40 min results in a measurable exchange (He∼10Oe) for a-axis samples due to chemical ordering. The possible cause for the difference of He in a-axis and c-axis orientations is also discussed. In addition to the normal structure, inverted structures were obtained epitaxially. The exchange biasing for Fe(001)/PdMn(001)/MgO(001) is as big as 68 Oe. [copyright] 2001 American Institute of Physics

  10. Influence of growth transients on interface and composition uniformity of ultra thin In(As,P) and (In,Al,Ga)As epilayers grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    In this work, measurements of epitaxial growth rate transients for multiple quantum wells (MQWs) in chemical beam epitaxy (CBE) have been made. Mass spectrometry measurements of typical growth conditions were made of gas source species of the InAsxP1-x/InP system, while reflection high-energy electron diffraction (RHEED) measurements were made for the GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs systems. The results of these experiments went directly into predicting the transient growth rate of thin layers for multi-quantum well photovoltaic devices. The data obtained using these techniques resulted in an improved growth interruption sequence for MQW structures in the InAsxP1-x/InP system. Improvements in overall material quality have been observed by high resolution X-ray diffraction (HRXRD). HRXRD measurements of the InAsxP1-x/InP structures yield sharp satellite peaks revealing the possibility of achieving nearly perfect interfaces. From low temperature photoluminescence, narrow emission linewidths from quantum wells indicate an enhanced compositional uniformity, and room temperature photocurrent spectroscopy reveals an improvement in device performance

  11. Growth diagram of N-face GaN (0001{sup ¯}) grown at high rate by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Okumura, Hironori, E-mail: okumura@engineering.ucsb.edu; McSkimming, Brian M.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Huault, Thomas; Chaix, Catherine [RIBER S.A., 3a Rue Casimir Perier, BP 70083, 95873 Bezons Cedex (France)

    2014-01-06

    N-face GaN was grown on free-standing GaN (0001{sup ¯}) substrates at a growth rate of 1.5 μm/h using plasma-assisted molecular beam epitaxy. Difference in growth rate between (0001{sup ¯}) and (0001) oriented GaN depends on nitrogen plasma power, and the (0001{sup ¯}) oriented GaN had only 70% of the growth rate of the (0001) oriented GaN at 300 W. Unintentional impurity concentrations of silicon, carbon, and oxygen were 2 × 10{sup 15}, 2 × 10{sup 16}, and 7 × 10{sup 16} cm{sup −3}, respectively. A growth diagram was constructed that shows the dependence of the growth modes on the difference in the Ga and active nitrogen flux, Φ{sub Ga} − Φ{sub N*}, and the growth temperature. At high Φ{sub Ga} − Φ{sub N*} (Φ{sub Ga} ≫ Φ{sub N*}), two-dimensional (step-flow and layer-by-layer) growth modes were realized. High growth temperature (780 °C) expanded the growth window of the two-dimensional growth modes, achieving a surface with rms roughness of 0.48 nm without Ga droplets.

  12. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Daniltsev, V. M.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Skorokhodov, E. V.; Shaleev, M. V.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-11-15

    Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 10{sup 7} cm{sup –2} and a root mean square roughness of less than 1 nm are obtained.

  13. Growth and characterization of Al xGa 1-xN via NH 3-based metal-organic molecular beam epitaxy

    Science.gov (United States)

    Billingsley, Daniel; Henderson, Walter; Pritchett, David; Alan Doolittle, W.

    2009-02-01

    Growth and characterization of ammonia-based metal-organic molecular beam epitaxy (NH 3-MOMBE) Al xGa 1-xN epitaxial films has been conducted. Al xGa 1-xN films spanning the entire range of aluminum compositions were grown on GaN templates. This is the first reported successful growth of Al xGa 1-xN via NH 3-MOMBE, using triethylgallium (TEGa), triethylaluminum (TEAl) and ammonia (NH 3) as the precursors. These films were characterized via optical interferometry (OI), atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscopy (SEM). High-quality Al xGa 1-xN films, as inferred by XRD, are achievable in films without cracking. The catalytic effect of Al on NH 3 is found to play a major part in the growth rate of the Al xGa 1-xN films. The excessive nitrogen produced through this catalytic effect hinders the growth rate at lower Al composition while increasing the growth rate of Al xGa 1-xN ( x>0.4) films. Stress in the deposited films is found to be partially relieved through surface cracking along the direction in the film. These cracks provide dislocation gettering centers, with the dislocation pit density decreasing with increasing Al composition. A basic understanding on the factors affecting the growth of Al xGa 1-xN is determined and will become the basis for further investigations into the optimization of Al xGa 1-xN growth.

  14. Growth of GaAs{sub 1−x}Bi{sub x} by molecular beam epitaxy: Trade-offs in optical and structural characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jincheng; Kim, Tong-Ho; Jiao, Wenyuan; Kong, Wei; Brown, April S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Forghani, Kamran [Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Collar, Kristen [Department of Physics, Duke University, Durham, North Carolina 27708 (United States); Kuech, Thomas F. [Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2014-07-28

    Recent work has shown that Bi incorporation increases during molecular beam epitaxy (MBE) when surface processes are kinetically limited through increased growth rate. Herein we explore how the structural and optical properties of GaAs{sub 1−x}Bi{sub x} films are modified when grown under conditions with varying degrees of kinetic limitations realized through growth temperature and growth rate changes. Within the typical window of MBE growth conditions for GaAs{sub 1−x}Bi{sub x}, we compare films with similar (∼3%) compositions grown under conditions of reduced kinetic limitations, i.e., relatively low gallium supersaturation achieved at higher temperatures (∼350 °C) and lower growth rates (∼0.5 μm/h), to those grown farther from equilibrium, specifically, higher supersaturation achieved at lower growth temperatures (∼290 °C) and higher growth rates (∼1.4 μm/h). Both the x-ray diffraction full width at half maximum of the omega-2theta scan and the 300 K photoluminescence intensity increase when samples are grown under less kinetically limited conditions. We interpret these findings in relation to the incorporation of Bi-related microstructural defects that are more readily formed during less kinetically limited growth. These defects lead to enhanced luminescence efficiency due to the spatial localization of carriers.

  15. Growth of GaAs1−xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics

    International Nuclear Information System (INIS)

    Recent work has shown that Bi incorporation increases during molecular beam epitaxy (MBE) when surface processes are kinetically limited through increased growth rate. Herein we explore how the structural and optical properties of GaAs1−xBix films are modified when grown under conditions with varying degrees of kinetic limitations realized through growth temperature and growth rate changes. Within the typical window of MBE growth conditions for GaAs1−xBix, we compare films with similar (∼3%) compositions grown under conditions of reduced kinetic limitations, i.e., relatively low gallium supersaturation achieved at higher temperatures (∼350 °C) and lower growth rates (∼0.5 μm/h), to those grown farther from equilibrium, specifically, higher supersaturation achieved at lower growth temperatures (∼290 °C) and higher growth rates (∼1.4 μm/h). Both the x-ray diffraction full width at half maximum of the omega-2theta scan and the 300 K photoluminescence intensity increase when samples are grown under less kinetically limited conditions. We interpret these findings in relation to the incorporation of Bi-related microstructural defects that are more readily formed during less kinetically limited growth. These defects lead to enhanced luminescence efficiency due to the spatial localization of carriers.

  16. Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption

    Science.gov (United States)

    Vogt, Patrick; Bierwagen, Oliver

    2016-02-01

    A detailed study of the reaction kinetics of the plasma-assisted molecular beam epitaxy (MBE) growth of the n-type semiconducting oxide Ga2O3 is presented. The growth rate as a function of gallium flux is measured in situ by laser reflectometry at different growth temperatures (TG) and gallium-to-oxygen ratios (rGa). The flux of the suboxide Ga2O desorbed off the growth surface is identified in situ by line-of-sight quadrupole mass spectroscopy. The measurements reveal the influence of TG and rGa on the competing formation of Ga2O3 and desorption of Ga2O resulting in three different growth regimes: (i) Ga transport limited, (ii) Ga2O desorption limited, and (iii) O transport limited. As a result, we present a growth diagram of gallium oxide. This diagram illustrates the regimes of complete, partial, and no Ga incorporation as a function of TG and rGa, and thus provides guidance for the MBE growth of Ga2O3.

  17. An Effective Approach to Improving Cadmium Telluride (111)A Surface by Molecular-Beam-Epitaxy Growth of Tellurium Monolayer.

    Science.gov (United States)

    Ren, Jie; Fu, Li; Bian, Guang; Su, Jie; Zhang, Hao; Velury, Saavanth; Yukawa, Ryu; Zhang, Longxiang; Wang, Tao; Zha, Gangqiang; Guo, Rongrong; Miller, Tom; Hasan, M Zahid; Chiang, Tai-Chang

    2016-01-13

    The surface cleansing treatment of non-natural cleavage planes of semiconductors is usually performed in vacuum using ion sputtering and subsequent annealing. In this Research Article, we report on the evolution of surface atomic structure caused by different ways of surface treatment as monitored by in situ core-level photoemission measurements of Cd-4d and Te-4d atomic levels and reflection high-energy electron diffraction (RHEED). Sputtering of surface increases the density of the dangling bonds by 50%. This feature and the less than ideal ordering can be detrimental to device applications. An effective approach is employed to improve the quality of this surface. One monolayer (ML) of Te grown by the method of molecular beam epitaxy (MBE) on the target surface with heating at 300 °C effectively improves the surface quality as evidenced by the improved sharpness of RHEED pattern and a reduced diffuse background in the spectra measured by high-resolution ultraviolet photoemission spectroscopy (HRUPS). Calculations have been performed for various atomic geometries by employing first-principles geometry optimization. In conjunction with an analysis of the core level component intensities in terms the layer-attenuation model, we propose a "vacancy site" model of the modified 1 ML-Te/CdTe(111)A (2 × 2) surface. PMID:26672795

  18. Temperature dependence of InGaP, InAlP, and AlGaP growth in metalorganic molecular-beam epitaxy

    Science.gov (United States)

    Ozasa, Kazunari; Yuri, Masaaki; Matsunami, Hiroyuki

    1990-04-01

    Metalorganic molecular-beam epitaxy of InGaP, InAlP, and AlGaP was investigated at various temperatures (290-650°C), using triethylindium (TEIn), triethylgallium (TEGa), triethylaluminum (TEAl), and phosphine. Three distinct stages were observed in the temperature dependence of growth rate and epilayer composition of those ternaries. At lower temperatures below 390°C the incomplete pyrolysis of TEGa and TEAl limits the growth, while TEIn decomposes perfectly as low as 290°C. TEAl decomposition is incomplete at all the temperatures studied, and is enhanced by the existence of TEIn or TEGa. To explain this observation, a co-decomposition mechanism was proposed, in which thermal energy produced by the pyrolysis of TEIn or TEGa induces the decomposition of TEAl; complexes such as TEAl-TEIn and TEAl-TEGa are assumed to be formed by mixing the metalorganics in the vapor phase. In the moderate-temperature region of 390-520°C, the growth is limited by the supply of metalorganics. At higher temperatures above 520°C phosphorus evaporates from the superficial part of epilayers with breaking bonds of In-P, resulting in many indium droplets on the epilayer surfaces. The incorporation of gallium and aluminum atoms into the indium droplets reduces the growth rate of the GaP and AlP constituents in InGaP and InAlP epitaxy. By the absence of In-P bonds, the growth rate of AlGaP does not decrease up to 650°C, and no droplets are formed on the surfaces.

  19. Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported. Electrical measurements performed on samples grown under Ga-rich conditions show three orders of magnitude higher reverse bias leakage compared with those grown under Ga-lean conditions. Transmission electron microscopy (TEM) studies reveal excess Ga at the surface termination of pure screw dislocations accompanied by a change in the screw dislocation core structure in Ga-rich films. The correlation of transport and TEM results indicates that dislocation electrical activity depends sensitively on dislocation type and growth stoichiometry. [copyright] 2001 American Institute of Physics

  20. Epitaxial growth dynamics in gallium arsenide

    Science.gov (United States)

    Ballestad, Anders

    The problem of a complete theory describing the far-from-equilibrium statistical mechanics of epitaxial crystal growth remains unsolved. Besides its academic importance, this problem is also interesting from the point of view of device manufacturing. In order to improve on the quality and performance of lateral nanostructures at the lengthscales required by today's technology, a better understanding of the physical mechanisms at play during epitaxial growth and their influence on the evolution of the large-scale morphology is required. In this thesis, we present a study of the morphological evolution of GaAs (001) during molecular beam epitaxy by experimental investigation, theoretical considerations and computational modeling. Experimental observations show that initially rough substrates smooth during growth and annealing towards a steady-state interface roughness, as dictated by kinetic roughening theory. This smoothing indicates that there is no need for a destabilizing step-edge barrier in this material system. In fact, generic surface growth models display a much better agreement with experiments when a weak, negative barrier is used. We also observe that surface features grow laterally, as well as vertically during epitaxy. A growth equation that models smoothing combined with lateral growth is the nonlinear, stochastic Kardar-Parisi-Zhang (KPZ) equation. Simulation fits match the experimentally observed surface morphologies quite well, but we argue that this agreement is coincidental and possibly a result of limited dynamic range in our experimental measurements. In light of these findings, we proceed by developing a coupled growth equations (CGE) model that describes the full morphological evolution of both flat and patterned starting surfaces. The resulting fundamental model consists of two coupled, spatially dependent rate equations that describe the interaction between diffusing adatoms and the surface through physical processes such as adatom diffusion

  1. Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs(001)

    International Nuclear Information System (INIS)

    Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E1 optical transition as a probe. We follow the kinetics of the deposition of GaAs and In0.3Ga0.7As on GaAs(001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As4 or As2 flux pressure of 5 x 10-6 Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico); Balderas-Navarro, R.E. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico); Facultad de Ciencias, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico)

    2008-07-01

    Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E{sub 1} optical transition as a probe. We follow the kinetics of the deposition of GaAs and In{sub 0.3}Ga{sub 0.7}As on GaAs(001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As{sub 4} or As{sub 2} flux pressure of 5 x 10{sup -6} Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxy

    Science.gov (United States)

    Kobayashi, N.; Benchimol, J. L.; Alexandre, F.; Gao, Y.

    1987-12-01

    The substrate temperature (Ts) dependence (350-700 °C) of GaAs and Ga1-y InyAs growth rates was investigated in metalorganic molecular beam epitaxy (MOMBE), using triethylgallium (TEG), trimethylindium (TMI), and solid arsenic (As4) sources. For GaAs growth, four distinct Ts dependent regions are observed, including a weak desorption process (500-650 °C) characteristic of MOMBE, preceding atomic Ga desorption (Ts >650 °C). When adding a TMI flux to grow Ga1-yInyAs, this desorption process was much enhanced up to 550 °C, and then decreased above 550 °C when the In desorption phenomenon takes place. Correlatively, the In alloy composition peaks at 550 °C. The same dependence was observed in Ga1-yInyAs growth using solid In and TEG sources. However, in Ga1-xAlxAs growth using solid Al or triethylaluminum (TEA) and TEG sources, the weak desorption observed in GaAs MOMBE was strongly minimized. From these results, possible growth mechanisms are discussed.

  4. Growth of pseudomorphic structures through organic epitaxy

    International Nuclear Information System (INIS)

    The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor α-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

  5. A molecular beam epitaxy facility for in situ neutron scattering

    International Nuclear Information System (INIS)

    A molecular beam epitaxy (MBE) facility has been built to enable in situ neutron scattering measurements during growth of epitaxial layers. While retaining the full capabilities of a research MBE chamber, this facility has been optimized for polarized neutron reflectometry measurements. Optimization includes a compact lightweight portable design, a neutron window, controllable magnetic field, deposition across a large 76 mm diameter sample with exceptional flux uniformity, and sample temperatures continuously controllable from 38 to 1375 K. A load lock chamber allows for sample insertion, storage of up to 4 samples, and docking with other facilities. The design and performance of this chamber are described here.

  6. Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system

    International Nuclear Information System (INIS)

    We designed a mechanism and the accompanying sample holders to transfer between a VEECO 930 oxide molecular beam epitaxy (MBE) and a PHI Versa Probe X-ray photoemission spectroscopy (XPS) chamber within a multiple station growth, processing, and analysis system through ultrahigh vacuum (UHV). The mechanism consists of four parts: (1) a platen compatible with the MBE growth stage, (2) a platen compatible with the XPS analysis stage, (3) a sample coupon that is transferred between the two platens, and (4) the accompanying UHV transfer line. The mechanism offers a robust design that enables transfer back and forth between the growth chamber and the analysis chamber, and yet is flexible enough to allow transfer between standard sample holders for thin film growth and masked sample holders for making electrical contacts and Schottky junctions, all without breaking vacuum. We used this mechanism to transfer a barium strontium titanate thin film into the XPS analysis chamber and performed XPS measurements before and after exposing the sample to the air. After air exposure, a thin overlayer of carbon was found to form and a significant shift (∼1 eV) in the core level binding energies was observed.

  7. Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

    Science.gov (United States)

    Adolph, David; Tingberg, Tobias; Ive, Tommy

    2015-09-01

    Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

  8. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    International Nuclear Information System (INIS)

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr4 to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm2/V s and the dc drain current reached ∼1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  9. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    Science.gov (United States)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  10. III-V semiconducting nanowires by molecular beam epitaxy

    OpenAIRE

    Jabeen, Fauzia

    2009-01-01

    This thesis is devoted to the study of the growth of III-V nanowires (NWs) by catalyst assisted and catalyst free molecular beam epitaxy (MBE). The nanostructures have been routinely characterized by scanning electron microscopy (SEM) and, to a minor extent by transmission electron microscopy (TEM). X-ray photoemission spectroscopy (XPS), scanning photoemission microscopy (SPEM), extended X-ray absrorption fi ne structure analysis (EXAFS), photoluminescence (PL) and trans- port me...

  11. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    Science.gov (United States)

    Bollinger, A. T.; Wu, J.; Božović, I.

    2016-05-01

    The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  12. Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Cortes, H; Mejia-Garcia, C [Escuela Superior de Fisica y Matematicas del IPN, UPALM, Edif. 9, Col. Lindavista, Mexico DF 07738 (Mexico); Mendez-GarcIa, V H; Vazquez-Cortes, D [Coordinacion para la Innovacion y la Aplicacion de la Ciencia y la TecnologIa, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis PotosI, S L P 78000 (Mexico); Rojas-Ramirez, J S; Contreras-Guerrero, R; RamIrez-Lopez, M; Martinez-Velis, I; Lopez-Lopez, M, E-mail: mlopez@fis.cinvestav.mx [Physics Department, Centro de Investigacion y de Estudios Avanzados del IPN, Apartado Postal 14-740, Mexico DF 07000 (Mexico)

    2010-04-02

    In the present work, we study the growth by molecular beam epitaxy of InAs self-assembling quantum dots (SAQDs) on GaAs(100) substrates subjected to an in situ annealing treatment. The annealing process consists of the exposition of the GaAs buffer layer surface to high temperatures for a few seconds with the shutter of an arsenic Knudsen cell closed. The purpose of the annealing is to obtain a better uniformity of the SAQD sizes. In our study we prepared different samples using the Stranski-Krastanov growth method to obtain InAs/GaAs(100) quantum dot samples with different annealing times and temperatures. Their structural and optical properties were studied by reflection high-energy electron diffraction (RHEED), high-resolution scanning electron microscopy (HRSEM), atomic force microscopy (AFM), and photoreflectance spectroscopy (PR). According to the results of AFM and HRSEM, by the thermal treatment we obtained a better distribution of quantum dot sizes in comparison with a reference sample with no treatment. The PR spectra from 0.9 to 1.35 eV presented two transitions associated with SAQDs. The energy transitions were obtained by fitting the PR spectra using the third derivative model.

  13. Effects of RF plasma parameters on the growth of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy

    CERN Document Server

    Shim Kyu Ha; Kim, K H; Hong, S U; Cho, K I; Lee, H G; Kim, J

    1999-01-01

    The effects of rf plasma power on the structural/optical properties of GaN-based nitride epilayers grown by plasma-assisted molecular beam epitaxy have been investigated. Atomic force microscopy and high-resolution x-ray diffraction analyses revealed that the sharp interface of In sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N/GaN heterostructures could be obtained by suppressing the surface roughening at high rf power. photoluminescence data suggest that the formation of damaged subsurface due to energetic particles was alleviated in the InGaN growth in comparison with the GaN growth. In our experimental set-up, the rf power of 400 W appeared to properly suppress the 3D island formation without causing defects at the subsurface of In sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N. The phenomena associated with the indium incorporation could be explained by an inequality with two kinetic processes of the surface diffusion and the plasma stimulated desorption.

  14. Growth of N-polar GaN Using a CrN buffer layer on (0001) Al2O3 via plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The growth of N-polar GaN films on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy was demonstrated using a CrN buffer layer. Analysis of reflection high energy electron diffraction (RHEED) patterns and a chemical etching method were used in order to confirm the polarity of GaN on CrN. RHEED patterns show the 3 × 3 pattern characteristic of GaN. Chemical etching significantly changes the GaN surface morphology which implies that the N-polar GaN was grown on the CrN buffer layer. In addition, an improvement in the crystal properties of GaN was achieved using the annealing process for the CrN buffer layers. - Highlights: ► Demonstration of N-polar GaN growth on sapphire using CrN buffer layer. ► Polarity selection model proposed to explain the experimental observations. ► Improvement of N-polar GaN crystallinity with thermal treatment of CrN layers

  15. Growth modes and epitaxy of FeAl thin films on a-cut sapphire prepared by pulsed laser and ion beam assisted deposition

    International Nuclear Information System (INIS)

    FeAl films around equiatomic composition are grown on a-cut (112¯0) sapphire substrates by ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD) at ambient temperature. Subsequent successive annealing is used to establish chemical order and crystallographic orientation of the films with respect to the substrate. We find a strongly [110]-textured growth for both deposition techniques. Pole figures prove the successful preparation of high quality epitaxial films by PLD with a single in-plane orientation. IBAD-grown films, however, exhibit three in-plane orientations, all of them with broad angular distributions. The difference of the two growth modes is attributed to the existence of a metastable intermediate crystalline orientation as concluded from nonassisted sputter depositions at different substrate temperatures. The formation of the chemically ordered crystalline B2 phase is accompanied by the expected transition from ferromagnetic to paramagnetic behavior of the films. In accordance with the different thermally induced structural recovery, we find a step-like magnetic transition to paramagnetic behavior after annealing for 1 h at TA = 300 °C for IBAD deposition, while PLD-grown films show a gradual decrease of ferromagnetic signals with rising annealing temperatures

  16. Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Dharmaraj, P.; Jeganathan, K., E-mail: kjeganathan@yahoo.com [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Parthiban, S.; Kwon, J. Y. [School of Integrated Technology and Yonsei Institute of Convergence Technology, Yonsei University, Yeonsu-gu, Incheon 406-840 (Korea, Republic of); Gautam, S.; Chae, K. H. [Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Asokan, K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

    2014-11-03

    We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si–C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of −0.08%. The carrier mobility of large area BLEG is ∼5100 cm{sup 2} V{sup −1} s{sup −1} with a sheet carrier density of 2.2 × 10{sup 13} cm{sup −2}. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58 eV) due to the Fermi-level pinning above the Dirac point.

  17. Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Zhang Dongyan; Zheng Xinhe; Li Xuefei; Wu Yuanyuan; Wang Jianfeng; Yang Hui

    2012-01-01

    High-quality In0.2Ga0.8N epilayers were grown on a GaN template at temperatures of 520 and 580 ℃ via plasma-assisted molecular beam epitaxy.The X-ray rocking curve full widths at half maximum (FWHM) of (10.2)reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature.When the growth temperature increases to 580 ℃,the FWHM of (00.2) reflections for these samples is very narrow and keeps similar,while significant improvement of(10.2) reflections with an FWHM value of 612 arcsec has been observed.This improved quality in InGaN layers grown at 580 ℃ is also reflected by the much larger size of the crystalline column from the AFM results,stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.

  18. Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

    International Nuclear Information System (INIS)

    Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by in situ X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping. The difference observed is attributed to In-Ga intermixing between the QDs and the cap layer under limited supply of In. Photoluminescence (PL) wavelength can be tuned by controlling the intermixing, which affects both the strain induced in the QDs and the barrier heights. The PL wavelength also varies with the cap layer thickness. A large redshift occurs by reducing the cap thickness. The in situ XRD observation reveals that this is a result of reduced strain. We demonstrate how such information about strain can be applied for designing and preparing novel device structures

  19. Growth and characterization of molecular beam epitaxy-grown Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloys

    Energy Technology Data Exchange (ETDEWEB)

    Tung, Y.; Chiang, Y. F.; Chong, C. W., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw; Deng, Z. X.; Chen, Y. C. [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Huang, J. C. A., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center (AOTC), National Cheng Kung University, Tainan 70101, Taiwan (China); Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei 10622, Taiwan (China); Cheng, C.-M., E-mail: cheongwei2000@yahoo.com, E-mail: jcahuang@mail.ncku.edu.tw, E-mail: makalu@nsrrc.org.tw; Pi, T.-W.; Tsuei, K.-D. [National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China); Li, Z.; Qiu, H. [School of Electronic Science and Applied Physics, HeFei University of Technology, Anhui (China)

    2016-02-07

    We report a systematic study on the structural and electronic properties of Bi{sub 2}Te{sub 3−x}Se{sub x} topological insulator alloy grown by molecular beam epitaxy (MBE). A mixing ratio of Bi{sub 2}Se{sub 3} to Bi{sub 2}Te{sub 3} was controlled by varying the Bi:Te:Se flux ratio. X-ray diffraction and Raman spectroscopy measurements indicate the high crystalline quality for the as-grown Bi{sub 2}Te{sub 3−x}Se{sub x} films. Substitution of Te by Se is also revealed from both analyses. The surfaces of the films exhibit terrace-like quintuple layers and their size of the characteristic triangular terraces decreases monotonically with increasing Se content. However, the triangular terrace structure gradually recovers as the Se content further increases. Most importantly, the angle-resolved photoemission spectroscopy results provide evidence of single-Dirac-cone like surface states in which Bi{sub 2}Te{sub 3−x}Se{sub x} with Se/Te-substitution leads to tunable surface states. Our results demonstrate that by fine-tuned MBE growth conditions, Bi{sub 2}Te{sub 3−x}Se{sub x} thin film alloys with tunable topological surface states can be obtained, providing an excellent platform for exploring the novel device applications based on this compound.

  20. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

    Directory of Open Access Journals (Sweden)

    Yoon SF

    2006-01-01

    Full Text Available AbstractSelf-assembled GaInNAs quantum dots (QDs were grown on GaAs (001 substrate using solid-source molecular-beam epitaxy (SSMBE equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM, photoluminescence (PL, and transmission electron microscopy (TEM measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW operation at room temperature (RT with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2 at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2, with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.

  1. Molecular beam epitaxy of GaAs nanowires and their sustainability for optoelectronic applications. Comparing Au- and self-assisted growth methods

    Energy Technology Data Exchange (ETDEWEB)

    Breuer, Steffen

    2011-09-28

    In this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1 % is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.

  2. Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy

    OpenAIRE

    Gacevic, Zarko; Fernández-Garrido, Sergio; Calleja Pardo, Enrique; Luna García de la Infanta, Esperanza; Trampert, Achim

    2009-01-01

    We demonstrate six to ten period lattice-matched In(0.18) Al(0.82) N/GaN distributed Bragg reflectors with peak reflectivity centred around 400 nm, grown by molecular beam epitaxy. Thanks to the well-tuned ternary alloy composition crack-free layers have been obtained as confirmed by both optical and scanning electron microscopy. In addition, crosssectional analysis by high resolution transmission electron microscopy reveals highly periodic structure with abrupt interfaces. When the number of...

  3. Silicon/Germanium Molecular Beam Epitaxy

    OpenAIRE

    Ericsson, Leif

    2006-01-01

    Molecular Beam Epitaxy (MBE) is a well-established method to grow low-dimensional structures for research applications. MBE has given many contributions to the rapid expanding research-area of nano-technology and will probably continuing doing so. The MBE equipment, dedicated for Silicon/Germanium (Si/Ge) systems, at Karlstads University (Kau) has been studied and started for the first time. In the work of starting the system, all the built in interlocks has been surveyed and connected, and t...

  4. The effect of metal-rich growth conditions on the microstructure of Sc{sub x}Ga{sub 1-x}N films grown using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Tsui, H.C.L.; Moram, M.A. [Department of Materials, Imperial College London (United Kingdom); Goff, L.E. [Department of Materials, Imperial College London (United Kingdom); Department of Physics, University of Cambridge (United Kingdom); Barradas, N.P. [CTN - Centro de Ciencias e Tecnologias Nucleares, Instituto Superior Tecnico, Universidade de Lisboa, Bobadela LRS (Portugal); Alves, E. [IPFN - Instituto de Plasmas e Fusao Nuclear, Lisboa (Portugal); Laboratorio de Aceleradores e Tecnologias de Radiacao, Instituto Superior Tecnico, Universidade de Lisboa, Bobadela LRS (Portugal); Pereira, S. [CICECO and Department of Physics, Universidade de Aveiro (Portugal); Beere, H.E.; Farrer, I.; Nicoll, C.A.; Ritchie, D.A. [Department of Physics, University of Cambridge (United Kingdom)

    2015-12-15

    Epitaxial Sc{sub x}Ga{sub 1-x}N films with 0 ≤ x ≤ 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The Sc{sub x}Ga{sub 1-x}N growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N{sub 2} induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite Sc{sub x}Ga{sub 1-x}N was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metal-rich conditions can help to stabilise wurtzite phase Sc{sub x}Ga{sub 1-x}N. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Molecular beam epitaxy growth of 1.55 μm GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence

    Science.gov (United States)

    Gupta, J. A.; Sproule, G. I.; Wu, X.; Wasilewski, Z. R.

    2006-05-01

    GaInNAs(Sb)/GaNAs double quantum well (DQW) structures were grown on GaAs substrates using solid-source molecular beam epitaxy with N 2/Ar gas mixtures in a radio frequency plasma cell. A novel method of in situ antimony mass spectrometry is introduced which permits flux monitoring in the presence of large arsenic background pressures. For a DQW sample grown without Sb, bright and narrow (38.1 meV) room temperature photoluminescence (PL) emission at 1509 nm was achieved after optimized rapid thermal annealing. In two samples grown with antimony fluxes of approximately 0.012 and 0.028 monolayers/s the PL intensity improved and very bright PL was observed at 1518 and 1551 nm with linewidths of 33.1 and 35.0 meV, respectively. The integrated PL intensities of each of these two samples was equivalent to the emission for a reference GaInNAs/GaAs DQW sample emitting closer to 1.3 μm. More strikingly, the intensity of the Sb-free 1509 nm sample was only lower by a factor of 2. This suggests that the N 2/Ar plasma approach has benefits for the material quality, as well as providing efficient flux control, yielding good material even without Sb. High-resolution X-ray diffraction and transmission electron microscopy measurements indicate excellent crystal quality for all samples. Secondary ion mass spectrometry reveals a dramatic tendency for Sb segregation during growth, resulting in very asymmetric incorporation with most of the Sb atoms located at the top interface.

  6. Epitaxial growth of beta-SiC on TiCx by reactive evaporation

    International Nuclear Information System (INIS)

    A parametric growth study was performed to determine optimum conditions for epitaxial growth of β-SiC on TiCx by reactive evaporation. The growth sources were E-beam evaporated Si and acetylene. The polycrystalline to epitaxial growth transition temperature was determined to be about 1,250C, and the optimum epitaxial growth temperature was about 1,400C. All β-SiC epilayers exhibited an n-type carrier concentration of about 2 x 1018, independent of growth conditions, due to the high concentration of nitrogen in the acetylene. The Ti concentration ([Ti]) at the β-SiC/TiC epitaxial interface was graded, due to Ti diffusion during epitaxial growth. The as-grown [Ti] profile at the β-SiC/TiCx interface was stable at 500C. However, the [Ti] profile, ion implanted into a β-SiC epilayer, changed appreciably at 500C

  7. Epitaxial Growth of Two-Dimensional Stanene

    Science.gov (United States)

    Jia, Jinfeng

    Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth. Ge-based germanene was realized by mechanical exfoliation. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations, or can support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall (QAH) effect. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene. In cooperation with Fengfeng Zhu, Wei-jiong Chen, Yong Xu, Chun-lei Gao, Dan-dan Guan, Canhua Liu, Dong Qian, Shou-Cheng Zhang.

  8. Epitaxial growth of CZT(S,Se) on silicon

    Science.gov (United States)

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  9. Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection

    OpenAIRE

    Shi, Zhenwu; Wang, Lu; Zhen, Honglou; Wang, Wenxin; Chen, Hong

    2013-01-01

    InGaAs/AlGaAs multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the energy band engineering on the photo-response wavelength is not easily achieved. A thin AlGaAs barrier grown at low temperature is used to suppress the In atom desorption, and this growth process was v...

  10. Chemical beam epitaxy of CdTe, HgTe, and HgCdTe

    Energy Technology Data Exchange (ETDEWEB)

    Benz, R.G. II; Wagner, B.K.; Rajavel, D.; Summers, C.J. (Physical Sciences Lab., Georgia Tech Research Inst., Atlanta, GA (USA))

    1991-05-01

    A chemical beam epitaxy (CBE) system has been implemented for the growth of CdTe, HgTe, and their alloys. The system is briefly described. Results on the cracking of the organometallic source gases are presented. Epitaxial layers have been grown from gas sources of diethylcadmium, diisopropyltelluride and Hg vapor, as well as conventional solid sources. Optical and electrical properties are reported, demonstrating the potential of CBE for growing high quality solar cell and infrared detector material. (orig.).

  11. Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions

    Science.gov (United States)

    Watson, John D.

    The unparalleled quality of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy has enabled a wide range of experiments probing interaction effects in two-dimensional electron and hole gases. This dissertation presents work aimed at further understanding the key material-related issues currently limiting the quality of these 2D systems, particularly in relation to the fractional quantum Hall effect in the 2nd Landau level and spin-based implementations of quantum computation. The manuscript begins with a theoretical introduction to the quantum Hall effect which outlines the experimental conditions necessary to study the physics of interest and motivates the use of the semiconductor growth and cryogenic measurement techniques outlined in chapters 2 and 3, respectively. In addition to a generic introduction to the molecular beam epitaxy growth technique, chapter 2 summarizes some of what was learned about the material purity issues currently limiting the low temperature electron mobility. Finally, a series of appendices are included which detail the experimental methods used over the course of the research. Chapter 4 presents an experiment examining transport in a low density two-dimensional hole system in which the hole density could be varied by means of an evaporated back gate. At low temperature, the mobility reached a maximum of 2.6 x 106 cm2/Vs at a density of 6.2 x 1010 cm-2 which is the highest reported mobility in a two-dimensional hole system to date. In addition, it was found that the mobility as a function of density did not follow a power law with a single exponent. Instead, it was found that the power law varied with density, indicating a cross-over between dominant scattering mechanisms at low density and high density. At low density the mobility was found to be limited by remote ionized impurity scattering, while at high density the dominant scattering mechanism was found to be background impurity scattering. Chapter 5 details an experiment

  12. Growth of Ge films by cluster beam deposition

    CERN Document Server

    Xu, J L; Feng, J Y

    2002-01-01

    Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

  13. Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy. It is found that an atomically flat surface can be obtained under Al-rich conditions at growth temperature of 780°C. However, the growth window to obtain an Al-droplet-free surface is too narrow to be well-controlled. However, the growth window can be greatly broadened by increasing the growth temperature up to 950°C, where an Al-droplet-free surface with a step-flow feature is obtained due to the enhanced re-evaporization rate and migration ability of Al adatoms. The samples grown at the higher temperature also show a higher crystalline quality than those grown at lower temperatures. (cross-disciplinary physics and related areas of science and technology)

  14. Epitaxial growth of VO2 by periodic annealing

    International Nuclear Information System (INIS)

    We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm

  15. Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    LI Cheng; LAI Hong-kai; CHEN Song-yan

    2005-01-01

    Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0.90 eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.

  16. Laser molecular beam epitaxy of ZnO thin films and heterostructures

    OpenAIRE

    Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

    2013-01-01

    We report on the growth of epitaxial ZnO thin films and ZnO based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultra-violet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser flu...

  17. Growth of epitaxial graphene: Theory and experiment

    International Nuclear Information System (INIS)

    A detailed review of the literature for the last 5–10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of important experimental techniques that have been used over the last decade to grow (e.g. CVD, TPG and segregation) and characterize (STM, LEEM, etc.) graphene are reviewed, and a critical survey of most important theoretical techniques is given. Finally, we critically discuss various unsolved problems related to growth and its mechanism which we believe require proper attention in future research

  18. Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates

    Science.gov (United States)

    Nikishin, S. A.; Temkin, H.; Antipov, V. G.; Guriev, A. I.; Zubrilov, A. S.; Elyukhin, V. A.; Faleev, N. N.; Kyutt, R. N.; Chin, A. K.

    1998-05-01

    Growth of high quality wurtzite-structure GaN layers on (111) MgAl2O4 by gas source molecular beam epitaxy is described. Hydrazine was used as a source of active nitrogen. In situ reflection high energy electron diffraction was used to monitor the growth mode. Two-dimensional growth was obtained at temperatures above 750 °C on multi-step GaN buffer layers. The resulting GaN films show excellent luminescence properties.

  19. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region

  20. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kasanaboina, Pavan Kumar [Department of Electrical and Computer Engineering, North Carolina A& T State University, Greensboro, North Carolina 27411 (United States); Ahmad, Estiak [Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA& T State University, Greensboro, North Carolina 27401 (United States); Li, Jia; Iyer, Shanthi [Department of Electrical and Computer Engineering, North Carolina A& T State University, Greensboro, North Carolina 27411 (United States); Nanoengineering, Joint School of Nanoscience and Nanoengineering, NCA& T State University, Greensboro, North Carolina 27401 (United States); Reynolds, C. Lewis; Liu, Yang [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  1. Gas source molecular-beam epitaxial growth of TlInGaAsN double quantum well light emitting diode structures and thallium incorporation characteristics

    Science.gov (United States)

    Matsumoto, T.; Krishnamurthy, D.; Fujiwara, A.; Hasegawa, S.; Asahi, H.

    2006-10-01

    TlInGaAsN/GaAs double quantum well (DQW) structures were grown on GaAs (1 0 0) substrates by gas source molecular-beam epitaxy. It has been found that high Tl flux is needed for the incorporation of Tl into the films. Reduction in the temperature variation of electroluminescence (EL) peak energy has been observed by the addition of Tl into quantum well (QW) layers; -0.62 meV/K for the InGaAsN/GaAs DQW light emitting diodes (LEDs) and -0.53 meV/K for the TlInGaAsN/GaAs DQW LEDs. By replacing GaAs barrier layers with TlGaAs barrier layers, further reduction could be obtained; -0.35 meV/K for TlInGaAsN/TlGaAs DQW LEDs. SIMS measurements indicated that this improvement is caused by the increased incorporation of Tl into the QW layers.

  2. Epitaxial growth by monolayer restricted galvanic displacement

    Directory of Open Access Journals (Sweden)

    Vasilić Rastko

    2012-01-01

    Full Text Available The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV and scanning tunneling microscopy (STM are employed to carry out and monitor a “quasi-perfect”, two-dimensional growth of Ag on Au(111, Cu on Ag(111, and Cu on Au(111 by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process.

  3. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    Science.gov (United States)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  4. Effects of growth temperature on the structural and the optical properties of ZnO thin films on porous silicon grown by using plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su; Kim, Soa Ram; Yim, Kwang Gug; Leem, Jae Young; Nam, Gi Woong [Inje University, Gimhae (Korea, Republic of); Kim, Do Yeob [Clemson University, Clemson, South Carolina (United States); Lee, Dong Yul [Samsung Electronics Co. Ltd., Yongin (Korea, Republic of); Kim, Jin Soo [Chonbuk National University, Jeonju (Korea, Republic of); Kim, Jong Su [Yeungnam University, Gyeongsan (Korea, Republic of); Son, Jeong Sik [Kyungwoon University, Gumi (Korea, Republic of)

    2012-05-15

    Zinc oxide (ZnO) thin films were grown on Si and porous silicon (PS) at different growth temperatures in the range from 150 to 550 .deg. C by using plasma-assisted molecular beam epitaxy (PA-MBE). The effects of PS and growth temperature on the structural and the optical properties of the ZnO thin films were investigated by using atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). A higher intensity and a narrower full width at half maximum (FWHM) of the ZnO (002) diffraction peak were observed from the ZnO thin films grown on PS, indicating improved crystal quality. For the ZnO thin films grown on Si, the optical properties were gradually enhanced as the growth temperature was increased. However, the structural and the optical properties of the ZnO thin films grown on PS exhibited the largest improvement at a growth temperature of 350 .deg. C. The structural and the optical properties of the ZnO thin films, compared with the ZnO thin films grown on Si, were improved by introducing PS, and the optimum growth temperature was decreased.

  5. Low-temperature grown graphene films by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Meng-Yu [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Guo, Wei-Ching; Wang, Pro-Yao [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan (China); Wu, Meng-Hsun [College of Photonics, National Chiao-Tung University, Tainan, Taiwan (China); Liu, Te-Huan; Chang, Chien-Cheng [Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan (China); Pao, Chun-Wei; Lin, Shih-Yen [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China)

    2012-11-26

    Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 Degree-Sign C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth.

  6. Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Epitaxial GaN films were grown on sapphire (0001) substrates by an ultra-high vacuum laser assisted molecular beam epitaxy (MBE) system using GaN solid target with laser energy density of ∼3 J cm−2 at various growth conditions. The influence of growth temperature, layer thickness and growth rate on the structural properties of the GaN layers have been studied using high resolution x-ray diffraction, field emission scanning electron microscopy and scanning tunneling microscopy at room temperature. The epitaxial GaN layers grown at 700 °C exhibited good crystalline properties with a screw dislocation density of 3.1 × 108 cm−2 as calculated from the x-ray rocking curve measurements. The electronic properties such as core levels and valence band of GaN film were examined using x-ray photoelectron spectroscopy. Chemical composition of the GaN layer was determined using core level spectroscopy. (paper)

  7. Epitaxial growth and characterization of layered magnetic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bertacco, R. [LNESS, Dipartimento di Fisica del Politecnico di Milano, via Anzani 52, Como (Italy); Cantoni, M. [LNESS, Dipartimento di Fisica del Politecnico di Milano, via Anzani 52, Como (Italy); Riva, M. [LNESS, Dipartimento di Fisica del Politecnico di Milano, via Anzani 52, Como (Italy); Tagliaferri, A. [LNESS, Dipartimento di Fisica del Politecnico di Milano, via Anzani 52, Como (Italy); Ciccacci, F. [LNESS, Dipartimento di Fisica del Politecnico di Milano, via Anzani 52, Como (Italy)]. E-mail: franco.ciccacci@fisi.polimi.it

    2005-12-15

    We describe the construction and operation of an ultrahigh-vacuum system devoted to the study of layered magnetic nanostructures. The apparatus includes two growth chambers, where specimens nanostructured along the direction of growth (heterostructures, nanometric and subnanometric thin films and multilayers) are deposited either by molecular beam epitaxy or pulsed laser deposition, and a measurement chamber, where they are analyzed in situ by a variety of electron spectroscopies. Magnetic characterization is obtained by spin resolved inverse photoemission spectroscopy and magneto optical Kerr effect technique. Vacuum transfer towards other experimental facilities is also available. As examples of application, results from half metallic magnetic oxides, such as magnetite (Fe{sub 3}O{sub 4}) and manganite (La{sub 2/3}Sr{sub 1/3}MnO{sub 3}) thin films, and ferromagnet/semiconductor interfaces (Fe/Ge(0 0 1)) are also reported.

  8. Thermal stability of epitaxial Fe films grown on Si substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Epitaxial Fe films are grown on Si(0 0 1) and Si(1 1 1) substrates by molecular beam epitaxy at room temperature. Several samples of one Fe/Si structure are subjected to rapid thermal annealing from 100 to 500 °C. The annealing impact on the morphological, magnetic properties and interfacial heterostructures of these samples is examined by atomic force microscopy, vibrating sample magnetometer and transmission electron microscopy, respectively. The results demonstrate that the material system Fe/Si grown at room temperature exhibits an abrupt interface and is thermally stable up to a temperature of 150 °C.

  9. Structural evolution of Re (0001) thin films grown on Nb (110) surfaces by molecular beam epitaxy

    OpenAIRE

    Welander, Paul B.

    2010-01-01

    The heteroepitaxial growth of Re (0001) films on Nb (110) surfaces has been investigated. Nb/Re bilayers were grown on A-plane sapphire -- alpha-Al2O3 (11-20) -- by molecular beam epitaxy. While Re grew with a (0001) surface, the in-plane epitaxial relationship with the underlying Nb could be best described as a combination of Kurdjumov-Sachs and Nishiyama-Wassermann orientations. This relationship was true regardless of Re film thickness. However, an evolution of the surface morphology with ...

  10. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In0.17Al0.83N/GaN heterostructure on Si(111)

    International Nuclear Information System (INIS)

    This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In0.17Al0.83N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In0.17Al0.83N–1.25 nm, GaN–1.5 nm, In0.17Al0.83N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 1010 cm−2 to 108 cm−2 with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure. Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2 nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs

  11. Growth of epitaxial thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

  12. Transport properties of modulation-doped structures grown by molecular beam epitaxy after focused ion beam implantation

    International Nuclear Information System (INIS)

    Modulation-doped structures are grown by molecular beam epitaxy after focused ion beam writing. The growth and implantation chambers are connected in a high vacuum to minimize the effect of growth interruption. The electron channel is drastically depleted by the buried Be+ implanted region, but only slightly depleted by the buried Au+ and Au2+ implanted regions. This is because Be+ implantation forms a p-type material, while Au+ or Au2+ implantation leaves damage only in the n-type material. Be+ implantation is therefore used to fabricate 0.1 μm-wide wires with electron mobility of 2.1x105 cm2/Vs. (author)

  13. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar+ ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge+ implantation, followed by B+ implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 1015 ions/cm2. Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  14. Surface and Thin Film Analysis during Metal Organic Vapour Phase Epitaxial Growth

    International Nuclear Information System (INIS)

    In-situ analysis of epitaxial growth is the essential ingredient in order to understand the growth process, to optimize growth and last but not least to monitor or even control the epitaxial growth on a microscopic scale. In MBE (molecular beam epitaxy) in-situ analysis tools existed right from the beginning because this technique developed from Surface Science technology with all its electron based analysis tools (LEED, RHEED, PES etc). Vapour Phase Epitaxy, in contrast, remained for a long time in an empirical stage ('alchemy') because only post growth characterisations like photoluminescence, Hall effect and electrical conductivity were available. Within the last two decades, however, optical techniques were developed which provide similar capabilities as in MBE for Vapour Phase growth. I will discuss in this paper the potential of Reflectance Anisotropy Spectroscopy (RAS) and Spectroscopic Ellipsometry (SE) for the growth of thin epitaxial semiconductor layers with zincblende (GaAs etc) and wurtzite structure (GaN etc). Other techniques and materials will be also mentioned

  15. Growth and Investigation of Epitaxial Gabias Layers

    Directory of Open Access Journals (Sweden)

    Andrius Ruseckas

    2011-08-01

    Full Text Available In this work the influence of technological parameters – Tp substrate temperature and Bi flux – on structural, electrical and optical properties of GaBiAs layers was investigated. Thin Ga-BiAs layers have been grown by molecular beam epitaxy tech-nology on monocrystalline GaAs substrates. The surface mor-phology of GaBiAs layers and formation of Bi droplets were examined using atomic force microscopy. The lattice parameters of GaBiAs and Bi concentration have been evaluated from high resolution X-ray diffraction ∆(2Θspektra. Optical measurements showed the reduction of energy band gap from 1.15 to 0.86 eV for GaBiAs layers with 4.4 and 11.3% of Bi concentration. From the Hall effect measurements using Van der Pauw geometry the highest carrier concentration 3.2∙1015 was measured for GaBiAs layers containing 11.3% of Bi.Article in Lithuanian

  16. High-mobility BaSnO3 grown by oxide molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Santosh Raghavan

    2016-01-01

    Full Text Available High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices.

  17. High-mobility BaSnO3 grown by oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnOx. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO3. We demonstrate room temperature electron mobilities of 150 cm2 V−1 s−1 in films grown on PrScO3. The results open up a wide range of opportunities for future electronic devices

  18. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  19. Growth of high purity semiconductor epitaxial layers by liquid phase epitaxy and their characterization

    Indian Academy of Sciences (India)

    S Dhar

    2005-07-01

    This paper briefly describes our work and the results on the growth of several III–V epitaxial semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such growth are listed and step-by-step procedures adopted to reduce them are discussed in particular reference to the growth of GaAs layers. The technique of growing very high purity layers by treating the melt with erbium is described for the growth of InGaAs and GaSb layers.

  20. Laser molecular beam epitaxy of ZnO thin films and heterostructures

    International Nuclear Information System (INIS)

    We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultraviolet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO-based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0 0 0 1)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations. (paper)

  1. Induced base transistor fabricated by molecular beam epitaxy

    Science.gov (United States)

    Chang, C.-Y.; Liu, W. C.; Jame, M. S.; Wang, Y. H.; Luryi, S.

    1986-09-01

    A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy. Two-dimensional electron gas induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain alpha has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

  2. Wafer curvature in molecular beam epitaxy grown heterostructures

    International Nuclear Information System (INIS)

    Wafer curvature in strained molecular beam epitaxy grown heterostructures has been studied. Theories on semiconductor wafer curvature have been re-examined and errors that have persisted in the literature have been corrected. This paper presents an approach to calculating the wafer curvature for an arbitrary multilayer system using basic physical equations. X-ray diffraction measurements have been performed to measure the radius of curvature of several samples and the results are in good agreement with the theory presented here

  3. GaN quantum dot density control by rf-plasma molecular beam epitaxy

    OpenAIRE

    Brown, J.; F Wu; Petroff, P. M.; J. S. Speck

    2004-01-01

    We report on the growth of GaN quantum dots and the control of their density in the Stranski-Krastanov mode on AlN (0001) by rf-plasma molecular beam epitaxy at 750 degreesC. After depositing the equivalent of 2-3 ML GaN coverage, as limited by N fluence under Ga-droplet growth conditions, excess Ga was desorbed and Stranski-Krastanov islands formed under vacuum. We present the dependence of island density as a function of GaN coverage (for two growth rates: 0.10 and 0.23 ML/s), as estimated ...

  4. Ion-beam-induced epitaxial crystallization of implanted and chemical vapor deposited amorphous silicon

    Science.gov (United States)

    La Ferla, A.; Priolo, F.; Spinella, C.; Rimini, E.; Baroetto, F.; Ferla, G.

    1989-03-01

    The dependence of ion-beam enhanced epitaxial growth of amorphous Si layers on impurities either dissolved in the film or present at the film-substrate interface is considered. In the case of ion implanted layers, electrically active dopants, like B, P, As at concentrations above 1 × 10 20/cm 3, enhance the rate by a factor of 2 with respect to the undoped layer. The enhancement shows also a weak dependence on the dopant concentration. Inert impurities, like Ar, which prevent pure thermal regrowth, do not show any appreciable influence on the ion-beam-induced growth rate. Chemical vapor deposited Si layers with a thin native interfacial oxide layer can also be epitaxially regrown under ion irradiation. A critical fluence is needed before the interfacial oxide breaks down and broadens, allowing the epitaxial crystallization to take place. This process is characterized by an activation energy of 0.44 eV. The complex phenomenon of ion-beam-induced crystallization involves a dynamical interaction between production and annealing of point defects. The presence of electrically active dopants probably influences the lifetime of point defects. Impurities which prevent thermal regrowth are instead dissolved by ballistic effects and/or radiation-enhanced mixing.

  5. Growth and characterization of Hg1–CdTe epitaxial films by isothermal vapour phase epitaxy (ISOVPE)

    Indian Academy of Sciences (India)

    Manju Malhotra; Madhukar Gautam; J K Radhakrishnan; Vinod Kapoor; Sudeep Verma; Upendra Kumar; Anand Kumar; Garima Gupta; Anshu Goyal; S Sitharaman

    2005-04-01

    Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have been successfully solved. The epitaxial films have been electrically characterized by using the Hall effect and capacitance–voltage (–) measurements.

  6. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.; Doolittle, W. Alan, E-mail: alan.doolittle@ece.gatech.edu [Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Bresnahan, Rich C. [Veeco Instruments, St. Paul, Minnesota 55127 (United States)

    2015-10-21

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N{sub 2} while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N{sub 2} and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 10{sup 16} to 3.8 × 10{sup 19} cm{sup −3} were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 10{sup 15} cm{sup −3}. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be

  7. Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9 μm/h by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Utilizing a modified nitrogen plasma source, plasma assisted molecular beam epitaxy (PAMBE) has been used to achieve higher growth rates in GaN. A higher conductance aperture plate, combined with higher nitrogen flow and added pumping capacity, resulted in dramatically increased growth rates up to 8.4 μm/h using 34 sccm of N2 while still maintaining acceptably low operating pressure. It was further discovered that argon could be added to the plasma gas to enhance growth rates up to 9.8 μm/h, which was achieved using 20 sccm of N2 and 7.7 sccm Ar flows at 600 W radio frequency power, for which the standard deviation of thickness was just 2% over a full 2 in. diameter wafer. A remote Langmuir style probe employing the flux gauge was used to indirectly measure the relative ion content in the plasma. The use of argon dilution at low plasma pressures resulted in a dramatic reduction of the plasma ion current by more than half, while high plasma pressures suppressed ion content regardless of plasma gas chemistry. Moreover, different trends are apparent for the molecular and atomic nitrogen species generated by varying pressure and nitrogen composition in the plasma. Argon dilution resulted in nearly an order of magnitude achievable growth rate range from 1 μm/h to nearly 10 μm/h. Even for films grown at more than 6 μm/h, the surface morphology remained smooth showing clear atomic steps with root mean square roughness less than 1 nm. Due to the low vapor pressure of Si, Ge was explored as an alternative n-type dopant for high growth rate applications. Electron concentrations from 2.2 × 1016 to 3.8 × 1019 cm−3 were achieved in GaN using Ge doping, and unintentionally doped GaN films exhibited low background electron concentrations of just 1–2 × 1015 cm−3. The highest growth rates resulted in macroscopic surface features due to Ga cell spitting, which is an engineering challenge still to be addressed. Nonetheless, the dramatically

  8. Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride

    International Nuclear Information System (INIS)

    The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having (001) orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relationship is observed. Cross-sectional transmission electron microscopy is used to reveal the epitaxial continuity at the gallium nitride-iron nitride interface. Surface morphology of the iron nitride, similar to yet different from that of the GaN substrate, can be described as plateau valley. The FeN chemical stoichiometry is probed using both bulk and surface sensitive methods, and the magnetic properties of the sample are revealed.

  9. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  10. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  11. Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    The growth of GeSn layers by molecular-beam epitaxy on Si (100) wafers coated with a germanium buffer layer is investigated. The properties of the fabricated structures are controlled by reflection high-energy electron diffraction, atomic-force microscopy, X-ray diffractometry, Rutherford backscattering, and Raman scattering. It is shown that GeSn layers with thicknesses up to 0.5 μm and Sn molar fractions up to 0.073 manifest no sign of plastic relaxation upon epitaxy. The lattice constant of the GeSn layers within the growth plane is precisely the same as that of Ge. The effect of rapid thermal annealing on the conversion of metastable elastically strained GeSn layers into a plastically relaxed state is examined. Ge/GeSn quantum wells with Sn molar fraction up to 0.11 are obtained

  12. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1−xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique

  13. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V., E-mail: pbraun@illinois.edu [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Sardela, Mauro [Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, Royal Institute of Technology (KTH), Electrum 229, 164 40 Kista (Sweden)

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  14. Universality and geometry dependence in the class of the nonlinear molecular beam epitaxy equation

    OpenAIRE

    Carrasco, I. S. S.; Oliveira, T. J.

    2016-01-01

    We report extensive numerical simulations of growth models belonging to the nonlinear molecular beam epitaxy (nMBE) class, with flat and curved geometries. In both $d=1+1$ and $2+1$, we find that growth regime height distributions (HDs), spatial and temporal covariances are universal, but geometry-dependent, while the critical exponents are the same for flat and curved interfaces. Therefore the nMBE class does split into subclasses, as also does the Kardar-Parisi-Zhang (KPZ) class. Applying t...

  15. Reflection mass spectrometry technique for monitoring and controlling composition during molecular beam epitaxy

    Science.gov (United States)

    Brennan, Thomas M.; Hammons, B. Eugene; Tsao, Jeffrey Y.

    1992-01-01

    A method for on-line accurate monitoring and precise control of molecular beam epitaxial growth of Groups III-III-V or Groups III-V-V layers in an advanced semiconductor device incorporates reflection mass spectrometry. The reflection mass spectrometry is responsive to intentional perturbations in molecular fluxes incident on a substrate by accurately measuring the molecular fluxes reflected from the substrate. The reflected flux is extremely sensitive to the state of the growing surface and the measurements obtained enable control of newly forming surfaces that are dynamically changing as a result of growth.

  16. Energetics of molecular-beam epitaxy models

    Science.gov (United States)

    Krishnamurthy, Srinivasan; Berding, M. A.; Sher, A.; Chen, A.-B.

    1990-10-01

    The removal energies of constituent atoms from various unreconstructed semiconductor surfaces are calculated using a Green function method. An efficient difference-equation approach within the second-neighbor tight-binding model is employed. For a compound AB, binding energies for the A and B atoms on the (111), (-1 -1 -1), (100), and (110) surfaces are calculated. Analyses are made of the energy to remove an atom from the nearly full surface and from the nearly empty surface. Results are presented for Si, GaAs, CdTe, and HgTe; and the surface sublimation energies are found to depend on surface coverage and do not display a simple linear relationship to the number of bonds broken, as is often assumed in modeling growth by MBE.

  17. Epitaxial growth of tungsten nanoparticles on alumina and spinel surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Suarez, T; Lopez-Esteban, S; Pecharroman, C; Esteban-Cubillo, A; Moya, J S [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Cientificas (CSIC), C/ Sor Juana Ines de la Cruz 3, 28049, Cantoblanco, Madrid (Spain); Diaz, L A; Torrecillas, R [Nanomaterials and Nanotechnology Research Center (CINN), Consejo Superior de Investigaciones CientIficas (CSIC), C/ Francisco Pintado Fe 26, 33011, Oviedo, Asturias (Spain); Gremillard, L [Universite de Lyon, INSA-Lyon, MATEIS, UMR CNRS 5510, 20 avenue Albert Einstein, Villeurbanne F-69621 (France)], E-mail: jsmoya@icmm.csic.es

    2008-05-28

    Isolated tungsten nanoparticles ({alpha}-W and {beta}-W phase) were synthesized and epitaxially grown on alumina and spinel particle surfaces with an average tungsten size of {<=}20 nm for a low tungsten content (of {<=}1.5 vol%). Using tungsten (VI) ethoxide alcoholic solutions, tungsten trioxide hydrated precursors were attached to a ceramic grains surface as a nanoparticle coating. High-resolution transmission electron microscopy (HRTEM) micrographs showed epitaxial interfaces between alumina, spinel and metallic tungsten. This epitaxial growth is assumed to be due to the effect of water vapour on the sublimation of ortho-tungstic acid during the reduction process in a hydrogen atmosphere. The planes involved in the epitaxy were found to be (22-bar 0){sub Al2O3} parallel (121){sub W} and (311){sub MgAl2O4} parallel (110){sub W}.

  18. Epitaxial growth of zinc oxide thin films on silicon

    International Nuclear Information System (INIS)

    Epitaxial zinc oxide thin films were grown on Si(111) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following epitaxial relationships were observed in the ZnO/AlN/Si(111) heterostructure: ZnO[0001] parallel AlN[0001] parallel Si[111] along the growth direction, and ZnO[21-bar 1-bar 0] parallel AlN[21-bar 1-bar 0] parallel Si[011-bar] along the in-plane direction. Domain-matching epitaxial growth of TiN on Si(111) substrate allows successful epitaxial growth of MgO and ZnO layers in a ZnO/MgO/TiN/Si(111) heterostructure. The epitaxial relationships observed for this heterostructure were ZnO[0001] parallel MgO/TiN/Si[111] along the growth direction and ZnO[21-bar 1-bar 0] parallel MgO/TiN/Si[011-bar] along in-plane direction. The resultant ZnO films demonstrate excellent electrical and optical properties. ZnO thin films exhibit extremely bright ultraviolet luminescence with relatively weak green-band emission

  19. HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy

    OpenAIRE

    Cheung, J. T.; Niizawa, G.; Moyle, J.; Ong, N. P.; Paine, B. M.; Vreeland, T., Jr.

    1986-01-01

    CdTe and HgTe epilayers and HgTe/CdTe superlattices have been grown by laser molecular beam epitaxy (laser MBE) on CdTe substrates. The power density of the laser radiation used to evaporate source materials was found to be a very important growth parameter. The superlattice structures have been characterized by helium ion backscattering spectrometry, x-ray double crystal diffractometry, and low temperature electrical transport measurements. Results indicate good crystallinity and very strong...

  20. Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

    International Nuclear Information System (INIS)

    InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 °C, and different In beam fluxes (BEPIn) ranging from 5.9 × 10−7 to 9.7 × 10−7 Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD) and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 °C by MEE.

  1. Epitaxial Growth of WOx Nanorod on Single Crystal Tungsten Substrate

    Science.gov (United States)

    Shingaya, Yoshitaka; Nakayama, Tomonobu

    Nanorods of substoichiometric tungsten oxide (WOx) were grown on single crystal tungsten substrate. The grown nanorods were investigated with scanning electron micrope and atomic force microscope. WOx nanorods were grown on W(001) in accordance with epitaxial relationship between WO3 crystals and W(001) surface. The results indicate that the WO3 crystals formed at the initial stage act as the nuclei of WOx nanorods. Nanorod growth of certain epitaxial directions can be selectively enhanced by choosing growth methods or choosing suitable crystallographic orientation of substrate surface.

  2. Study of surface kinetic effects in the Molecular Beam Epitaxy (MBE) growth of III-V compounds by Reflection High Energy Electron Diffraction (RHEED) analysis

    International Nuclear Information System (INIS)

    A comparative surface kinetic study at MBE on (100) Ga As, Al Sb, Ga Sb and InSb surfaces has been presented. The growth mode evolution was determined in all cases by measurements of RHEED oscillation intensity. The temperature dependence of surface diffusion length for Al, Ga and In adatoms on the Ga As, Al As, Al Sb, Ga Sb and InSb was founded. The result shows that interface roughness in heterostructures depends strongly not only on substrate temperature but also on growth rate. (author). 7 refs., 4 figs., 1 tab

  3. Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Scandium nitride (ScN) films were grown on (100) MgO single crystals by a molecular beam epitaxy method. The effects of growth conditions, including [Sc]/[N] ratio, growth temperature, and nitrogen radical state, on the electrical properties of the ScN films were studied. The ScN films comprised many small columnar grains. Hall coefficient measurements confirmed that the ScN films were highly degenerate n-type semiconductors and that the carrier concentration of the ScN films was sensitive to the growth temperature and the nitrogen radical states during the film growth. The carrier concentrations of the ScN films ranged from 1019–1021 cm−3 while the Hall mobilities ranged from 50–130 cm2·V−1·s−1 for undoped films. The temperature-dependent Hall coefficient measurements showed that the carrier concentration is nearly independent of temperature, indicating that the change in resistivity with temperature is explained by a change in the Hall mobility. The temperature-dependence of the Hall mobility was strongly affected by the growth conditions

  4. GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy

    Science.gov (United States)

    Dussaigne, A.; Malinverni, M.; Martin, D.; Castiglia, A.; Grandjean, N.

    2009-10-01

    GaN epilayers are grown on (1 1 1) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial wurtzite GaN film is obtained. The surface morphology is smooth: the rms roughness is as low as 1.3 nm for 2×2 μm 2 scan. Photoluminescence measurements reveal pretty good optical properties. The GaN band edge is centred at 3.469 eV with a linewidth of 5 meV. These results demonstrate that GaN heteroepitaxially grown on diamond opens new rooms for high power electronic applications.

  5. Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Jeganathan, K., E-mail: kjeganathan@yahoo.com [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli-620 024, Tamil Nadu (India); Shimizu, M., E-mail: mitsu.shimizu@aist.go.jp [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan. (Japan)

    2014-09-15

    We investigate the role of growth temperature on the optimization of lattice-matched In{sub 0.17}Al{sub 0.83}N/GaN heterostructure and its structural evolutions along with electrical transport studies. The indium content gradually reduces with the increase of growth temperature and approaches lattice-matched with GaN having very smooth and high structural quality at 450ºC. The InAlN layers grown at high growth temperature (480ºC) retain very low Indium content of ∼ 4 % in which cracks are mushroomed due to tensile strain while above lattice matched (>17%) layers maintain crack-free compressive strain nature. The near lattice-matched heterostructure demonstrate a strong carrier confinement with very high two-dimensional sheet carrier density of ∼2.9 × 10{sup 13} cm{sup −2} with the sheet resistance of ∼450 Ω/□ at room temperature as due to the manifestation of spontaneous polarization charge differences between InAlN and GaN layers.

  6. Superconductivity in oxygen doped iron telluride by molecular beam epitaxy

    Science.gov (United States)

    Zheng, Mao

    Iron base superconductor have gained much attention in the research community. They offer great potentials to improve our understanding of the subject of superconductivity by having another family of high temperature superconductors to compare and contrast to the cuprates. Practically, the iron based superconductors seems to be even better candidates for applications in power generation and power transmission. Iron telluride is regarded as the parent compound of the "11" family, the family of iron chalcogenide that has the simplest structure. Iron telluride itself is not a superconductor, by can become one when doped with oxygen. In this investigation, we developed the growth recipe of thin film iron telluride by Molecular Beam Epitaxy (MBE). We found the growth to be self-regulated, similar to that of GaAs. The initial layers of growth seem to experience a spontaneous crystallization, as the film quickly go from the initial polycrystalline phase to highly crystalline in just a few unit cells. We studied oxygen doping to the iron telluride thin films and the resultant superconductivity. We characterized the sample with AFM, XRD, transport, and STEM-EELS, and we found that interfacial strain is not an essential ingredient of superconductivity in this particular case. We investigated the doping conditions for two candidate oxygen doping modes: substitution and interstitial. We found that substitution occurs when the film grown in oxygen, while interstitial oxygen is primarily incorporated during annealing after growth. The substitutional oxygen are concentrated in small local regions where substitution is around 100%, but does not contribute to superconductivity. We estimated substitutional oxygen to be about 5%, and is the proximate cause of superconductivity. Hall experiment on our sample showed a shift of dominant carrier type from holes to electrons around 35 K, but the transition was set in motion as early as the structural phase transition around 70 K. We

  7. Investigation of InN layers grown by molecular beam epitaxy on GaN templates

    Energy Technology Data Exchange (ETDEWEB)

    Vilalta-Clemente, A.; Mutta, G.R.; Chauvat, M.P.; Morales, M.; Doualan, J.L.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, Caen (France); Grandal, J.; Sanchez-Garcia, M.A.; Calle, F. [ISOM y Department de Ingenieria Electronica, E.T.S.I. Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria (Spain); Valcheva, E.; Kirilov, K. [Faculty of Physics, Sofia University (Bulgaria)

    2010-05-15

    An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X-ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best samples exhibit a PL emission between 0.6 and 0.7 eV. The surface structure was quite different from one sample to the other, pointing out to a critical role of the growth conditions, which probably need to be tightly optimized for a good reproducibility. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  8. 3英寸Si基碲镉汞分子束外延工艺研究%Research on molecular beam epitaxy growth HgCdTe film on 3 in Si based substrate

    Institute of Scientific and Technical Information of China (English)

    巩锋; 周立庆; 王经纬; 刘铭; 常米; 强宇

    2012-01-01

    随着红外焦平面阵列规模的扩大,由于尺寸和成本的限制,传统晶格匹配的碲锌镉衬底逐渐成为碲镉汞红外焦平面探测器发展的瓶颈,大尺寸、低成本硅基碲镉汞材料应运而生.本文采用分子束外延工艺生长获得了3 in Si基中波碲镉汞薄膜材料,通过采用金相显微镜、傅里叶红外光谱仪、双晶X射线衍射仪、湿化学腐蚀位错密度(EPD)法、Hall测试系统等检测手段对Si基中波碲镉汞分子束外延薄膜材料进行表面、光学、结构和电学性能表征,并采用标准平面器件工艺制备中波640 ×512焦平面探测阵列进行材料验证,结果表明该材料性能与国际先进水平相当.%The traditional lattice matched CdZnTe substrate for HgCdTe infrared focal plane arrays becomes an bottle neck gradually due to current size and cost limitation of bulk CdZnTe. As larger infrared focal plane array sizes are required for future devices,large area Si based substrates will become a requirement for HgCdTe growth in order to obtain the cost-efficiency of future systems. This paper reports the growth of MWIR HgCdTe material on 3 in CdTe/Si substrates by Molecular Beam Epitaxy technology. The optical, electrical and structural properties of epi-layers with smooth surface morphology was measured with Optical microscope,Fourier transform infrared spectrometer,X-ray diffraction rocking curve,Etch-pit density and Hall system. 640 ×512 arrays were fabricated from this material and imaging was demonstrated. All the results indicate the properties of this material has achieved top level in the world.

  9. Au-free epitaxial growth of InAs nanowires.

    Science.gov (United States)

    Mandl, Bernhard; Stangl, Julian; Mårtensson, Thomas; Mikkelsen, Anders; Eriksson, Jessica; Karlsson, Lisa S; Bauer, G Uuml Nther; Samuelson, Lars; Seifert, Werner

    2006-08-01

    III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined. PMID:16895379

  10. Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony

  11. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  12. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    International Nuclear Information System (INIS)

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques

  13. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. H. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA; Tung, I. C. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA; Chang, S. -H. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Bhattacharya, A. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Fong, D. D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Freeland, J. W. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA; Hong, Hawoong [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  14. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

    Science.gov (United States)

    Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

    2016-01-01

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques. PMID:26827327

  15. In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. H.; Freeland, J. W.; Hong, Hawoong, E-mail: hhong@aps.anl.gov [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Tung, I. C. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Chang, S.-H.; Bhattacharya, A.; Fong, D. D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2016-01-15

    In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

  16. Flow growth and liquid phase epitaxy of oxides

    International Nuclear Information System (INIS)

    The state of the art in flux growth and liquid phase epitaxy has been done. The world wide literature on interesting topic has been cited. The particular methods and their technical solutions as well as the conditions necessary for crystal growth have been described in detail. Many examples have been shown concerned the broad spectrum of interesting material preparation.The composition of crystallized systems and the structure of obtained monocrystals have been reviewed and discussed. 182 refs, 25 figs, 8 tabs

  17. Epitaxial Growth, Processing and Characterization of Semiconductor Nanostructures

    OpenAIRE

    Borgström, Magnus

    2003-01-01

    This thesis deals with the growth, processing and characterization of nano-sized structures, eg., self-assembled quantum dots and nano-wires. Such structures are promising candidates for the realization of nano-scale electronic and optical devices, like for instance single electron transistors, resonant tunneling devices, and single photon emitters. For such purposes, the main focus of this work has been on the controlled growth of self-assembled quantum dots. For epitaxy, which is the fundam...

  18. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

    OpenAIRE

    Song, Can-Li; Wang, Yi-Lin; Jiang, Ye-Ping; Zhang, Yi; Chang, Cui-Zu; Wang, Lili; He, Ke; Chen, Xi; Jia, Jin-Feng; Wang, Yayu; Fang, Zhong; Dai, Xi; Xie, Xin-Cheng; Qi, Xiao-Liang; Zhang, Shou-Cheng

    2010-01-01

    Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\\pm 0.2x1011/cm2, and become a bulk insulator at a ...

  19. Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction

    International Nuclear Information System (INIS)

    The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

  20. Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Akbari-Sharbaf, Arash [Department of Physics and Astronomy, University of Western Ontario, London, ON, Canada N6A 3K7 (Canada); Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J. [Institute for Microstructural Sciences, National Research Council, Ottawa, ON, Canada K1A 0R6 (Canada); Fanchini, Giovanni, E-mail: gfanchin@uwo.ca [Department of Physics and Astronomy, University of Western Ontario, London, ON, Canada N6A 3K7 (Canada); Department of Chemistry, University of Western Ontario, London, ON, Canada N6A 5B7 (Canada)

    2013-01-01

    We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10{sup 19} cm{sup −3} at 98 °C to ∼ 1 · 10{sup 18} cm{sup −3} at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults.

  1. Surfactant-assisted epitaxial growth and magnetism of Fe films on Cu(111)

    Energy Technology Data Exchange (ETDEWEB)

    Nino, M A; Camarero, J; Miguel, J J de; Miranda, R [Departamento de Fisica de la Materia Condensada and Instituto de Ciencia de Materiales ' Nicolas Cabrera' , Universidad Autonoma de Madrid, Cantoblanco, 28049-Madrid (Spain); Gomez, L [Facultad de Ciencias Exactas, IngenierIa y Agrimensura, Instituto de Fisica Rosario, 2000-Rosario (Argentina); Ferron, J [Instituto de Desarrollo Tecnologico para la Industria Quimica (CONICET-UNL), Departamento de Materiales, Facultad de IngenierIa Quimica, UNL, 3000 Santa Fe (Argentina)

    2008-07-02

    The magnetic properties of thin epitaxial layers of Fe grown on Cu(111) depend sensitively on the films' structure and morphology. A combination of experiments and numerical simulations reveals that the use of a surfactant monolayer (ML) of Pb during molecular beam epitaxy (MBE) growth at room temperature reduces the amount of interdiffusion at the Cu-Fe interface, retards the fcc-to-bcc transformation by about 2 ML and substantially increases the films' coercivity. The origin of all these alterations to the magnetic behavior can be traced back to the structural modifications provoked by the surfactant during the early growth stages. These results open the way for the controlled fabrication of custom-designed materials with specific magnetic characteristics.

  2. Reduction in the crystal defect density of Zn Se layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We present a study of the molecular beam epitaxial (MBE) grown of Zn Se layers on Ga-As and Si substrates. For the growth on GaAs substrates we investigated the effects of introducing buffer layers of AlxGa1-x As and InxGa1-x As with x = 0.01. Moreover, an analysis by secondary ion mass spectroscopy revealed that the use of AlGaAs buffer layers effectively suppress the Ga segregation onto the Zn Se layers surface. On the other hand, for the growth of Zn Se on Si substrates, we achieved a significant improvement in the crystal quality of Zn Se by irradiating the Si substrates with plasma of nitrogen prior to the growth. (Author)

  3. Reduction in the crystal defect density of Zn Se layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lopez L, M.; Perez C, A.; Luyo A, J.; Melendez L, M.; Tamura, M. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del instituto politecnico Nacional, A.P. 14-740, 07000 Mexico D.F. (Mexico); Mendez G, V.H.; Vidal, M.A. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, 78000 San Luis Potosi (Mexico)

    2000-07-01

    We present a study of the molecular beam epitaxial (MBE) grown of Zn Se layers on Ga-As and Si substrates. For the growth on GaAs substrates we investigated the effects of introducing buffer layers of Al{sub x}Ga{sub 1-x} As and In{sub x}Ga{sub 1-x} As with x = 0.01. Moreover, an analysis by secondary ion mass spectroscopy revealed that the use of AlGaAs buffer layers effectively suppress the Ga segregation onto the Zn Se layers surface. On the other hand, for the growth of Zn Se on Si substrates, we achieved a significant improvement in the crystal quality of Zn Se by irradiating the Si substrates with plasma of nitrogen prior to the growth. (Author)

  4. Microstructure of InxGa1−xN nanorods grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Transmission electron microscopy is used to examine the structure and composition of InxGa1−xN nanorods grown by plasma-assisted molecular beam epitaxy. The results confirm a core–shell structure with an In-rich core and In-poor shell resulting from axial and lateral growth sectors respectively. Atomic resolution mapping by energy-dispersive x-ray microanalysis and high angle annular dark field imaging show that both the core and the shell are decomposed into Ga-rich and In-rich platelets parallel to their respective growth surfaces. It is argued that platelet formation occurs at the surfaces, through the lateral expansion of surface steps. Studies of nanorods with graded composition show that decomposition ceases for x ≥ 0.8 and the ratio of growth rates, shell:core, decreases with increasing In concentration. (paper)

  5. Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Lorenzo Rigutti

    2009-01-01

    Full Text Available We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

  6. Electrical and optical properties of ZnO films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Zinc oxide (ZnO) films have been grown on sapphire by molecular beam epitaxy (MBE), and it is found that the grain size of the ZnO films increased with increasing the growth temperature. Photoluminescence (PL) study shows that the intensity ratio of near-band-edge emission to deep-level-related emission (NBE/DL) of the ZnO is significantly enhanced with increasing the growth temperature, and the dependence of the carrier mobility on the growth temperature shows very similar trend, which implies that there is a community factor that determines the optical and electrical properties of ZnO, and this factor is suggested to be the grain boundary. The results obtained in this paper reveal that by reducing the grain boundaries, ZnO films with high optical and electrical properties may be acquired.

  7. Growth temperature dependent structural and magnetic properties of epitaxial Co2FeAl Heusler alloy films

    Science.gov (United States)

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2013-06-01

    The structural and magnetic properties of a series of Co2FeAl Heusler alloy films grown on GaAs(001) substrate by molecular beam epitaxy have been studied. The epitaxial Co2FeAl films with an ordered L21 structure have been successfully obtained at growth temperature of 433 K, with an in-plane cubic magnetic anisotropy superimposed with an unusual uniaxial magnetic anisotropy. With increasing growth temperature, the ordered L21 structure degrades. Meanwhile, the uniaxial anisotropy decreases and eventually disappears above 673 K. The interfacial bonding between As and Co or Fe atom is suggested to be responsible for the additional uniaxial anisotropy.

  8. Epitaxial growth of Fe on GaN(0001): Structural and magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Calarco, R.; Meijers, R.; Kaluza, N.; Guzenko, V.A.; Thillosen, N.; Schaepers, Th.; Lueth, H. [Institute of Thin Films and Interfaces (ISG1) and CNI - Center of Nanoelectronic Systems for Information Technology, Research Centre Juelich, 52425 Juelich (Germany); Fonin, M.; Krzyk, S.; Ghadimi, R.; Beschoten, B.; Guentherodt, G. [II. Physikalisches Institut, RWTH Aachen, 52056 Aachen (Germany)

    2005-04-01

    We report results on growth studies of Fe on GaN, in particular with respect to structural and magnetic properties. The growth of GaN has been carried out by molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) on Si(111) and Al{sub 2}O{sub 3} substrates, respectively. Fe depositions of different thicknesses were performed in ultra high vacuum (UHV) at room temperature using an electron-beam evaporation set-up. X-ray diffraction analysis shows that the iron films are crystalline and indications of a (110) bcc orientation of the film are observed. By means of scanning tunneling microscopy (STM) epitaxial islands of Fe on the GaN(0001) surface, on a scale of 500 x 500 nm{sup 2}, have been observed. The experimentally determined magnetic hysteresis loops, with the magnetic field applied parallel to the sample surface, show a coercive field that decreases as the temperature increases; at 300 K and 50 K we measure a coercive field of 12 G and 36 G, respectively. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Molecular beam epitaxial regrowth on diffraction gratings for vertical-cavity, surface-emitting laser-based integrated optoelectronics

    International Nuclear Information System (INIS)

    Epitaxial regrowth techniques, using molecular beam epitaxy, were optimized for the inclusion of submicron diffraction gratings within a vertically resonant structure. Various growth conditions including chemical surface preparation, growth rate, and regrown interfacial structure were studied to determine the quality of the regrown materials and structures. Characteristics such as dislocation density and growth planarity (flatness of the regrown layers) were of particular importance due to the vertical geometry and resonance requirements of the structure. Threading dislocation densities of ≅3x106 cm-2 were measured, by means of transmission electron microscopy, in the regrown structures using optimized regrowth processes. Layer thickness variations, due to growth on nonplanar surfaces (diffraction gratings), were characterized using modeling and optical reflectometry. With these results, inclusion of diffraction gratings has been demonstrated with the accurate control over layer thickness needed for use in vertically oriented devices such as vertical-cavity, surface-emitting lasers, and resonant cavity photodetectors

  10. High-index Cu2O (113) film on faceted MgO (110) by molecular beam epitaxy

    Science.gov (United States)

    Huo, Wenxing; Shi, Jin'an; Mei, Zengxia; Liu, Lishu; Li, Junqiang; Gu, Lin; Du, Xiaolong; Xue, Qikun

    2015-06-01

    We report the growth of single-oriented Cu2O (113) film on faceted MgO (110) substrate by radio-frequency plasma assisted molecular beam epitaxy. A MgO {100} faceted homoepitaxial layer was introduced beforehand as a template for epitaxy of Cu2O film. The epitaxial relationship is determined to be Cu2O (113)//MgO (110) with a tilt angle of 4.76° and Cu2O [ 1 1 bar 0]//MgO [ 1 1 bar 0] by the combined study of in-situ reflection high-energy electron diffraction and ex-situ X-ray diffraction and transmission electron microscopy. The film demonstrates a good p-type conductivity and excellent optical properties, indicating that this unique approach is potentially applicable for high-index film preparation and device applications.

  11. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    McHugo, S.A.; Krueger, J.; Kisielowski, C. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  12. Epitaxial growth on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Nohavica, Dušan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Piksová, K.

    2013-01-01

    Roč. 16, č. 1 (2013), s. 59-64. ISSN 1631-0748 R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253 Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D) Impact factor: 1.483, year: 2013

  13. Epitaxial growth of aligned GaN nanowires and nanobridges

    OpenAIRE

    Kim, Kyungkon; Henry, Tania; Cui, George; Han, Jung; Song, Yoon-Kyu; Nurmikko, Arto V.; Tang, Hong

    2007-01-01

    Homo-epitaxialy grown aligned GaN nanowires were prepared on crystalline GaN mesas. The GaN nanowires showed preferential growth along the 〈100〉 direction (m-axis direction). By using selectively positioned and crystallographically well defined GaN epitaxial lateral overgrowth (ELO) mesas as substrate, we obtained horizontally aligned GaN nanowires, in comb-like arrays and hexagonal network interconnecting the ELO mesas. Preliminary testing of the nanomechanical behavior of horizontal nanowir...

  14. Comparison of Morphology Evolution of Ge(001) Homoepitaxial Films Grown by Pulsed Laser Deposition and Molecular Beam Epitaxy

    OpenAIRE

    McCamy, James W.; Shin, Byungha; Leonard, John P.; Aziz, Michael

    2005-01-01

    Using a dual Molecular Beam Epitaxy (MBE)-Pulsed Laser Deposition (PLD) Ultra-High Vacuum chamber, we have conducted the first experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the square-base along direc...

  15. Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy

    OpenAIRE

    Green, D S; Mishra, U. K.; Speck, J.S.

    2004-01-01

    Carbon tetrabromide (CBr4) was studied as an intentional dopant during rf plasma molecular beam epitaxy of GaN. Secondary ion mass spectroscopy was used to quantify incorporation behavior. Carbon was found to readily incorporate under Ga-rich and N-rich growth conditions with no detectable bromine incorporation. The carbon incorporation [C] was found to be linearly related to the incident CBr4 flux. Reflection high-energy electron diffraction, atomic force microscopy and x-ray diffraction wer...

  16. Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

    OpenAIRE

    Hudait, Mantu K.; Zhu, Y.; Maurya, Deepam; Priya, Shashank

    2013-01-01

    The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO2 film. The measured valence band offset value of HfO2 relative to (110)Ge was 2.28 +/- 0.05 eV. The extracted conduction band offset value was 2.66 +/- 0.1 eV using the bandgaps of HfO2 of 5.61 eV ...

  17. Molecular beam epitaxy of Ge-Sb-Te thin films on Si substrates

    International Nuclear Information System (INIS)

    Owing to their phase-change properties, Ge-Sb-Te thin films, i.e., Ge2Sb2Te5 (GST), are being intensively studied for new concepts of non-volatile memory. The deposition technique commonly employed is sputtering, leading to poly-crystalline layers. Here it is shown that molecular beam epitaxy allows for the preparation of highly ordered Ge-Sb-Te films even on strongly lattice-mismatched substrates like Si. In situ reflection high-energy diffraction and quadrupole mass spectrometry are utilized to monitor the growth process in real time. Ex situ X-ray diffraction, atomic force microscopy and secondary electron microscopy, and X-ray fluorescence are used to investigate the structural properties, the surface morphology, and the stoichiometry of the grown films, respectively. As main result, single crystalline GST layers can be achieved on Si(111) substrates with epitaxial relationships GST[111]//Si[111] and GST//Si in the growth direction and in-plane, respectively. The growth on Si(001) instead produces (111)-oriented films with weak texture. GST thin films with a high structural order are expected to exhibit superior electrical/switching properties to the poly-crystalline layers deposited by sputtering.

  18. Radical-source molecular beam epitaxy of ZnO-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sadofiev, Sergey

    2009-10-27

    This work focuses on the development of the novel growth approaches for the fabrication of Group II-oxide materials in the form of epitaxial films and heterostructures. It is shown that molecular-beam epitaxial growth far from thermal equilibrium allows one to overcome the standard solubility limit and to alloy ZnO with MgO or CdO in strict wurtzite phase up to mole fractions of several 10 %. In this way, a band-gap range from 2.2 to 4.4 eV can be covered. A clear layer-by-layer growth mode controlled by oscillations in reflection high-energy electron diffraction makes it possible to fabricate atomically smooth heterointerfaces and well-defined quantum well structures exhibiting prominent band-gap related light emission in the whole composition range. On appropriately designed structures, laser action from the ultraviolet down to green wavelengths and up to room temperature is achieved. The properties and potential of the ''state-of-the-art'' materials are discussed in relation to the advantages for their applications in various optoelectronic devices. (orig.)

  19. Big-Data RHEED analysis for understanding epitaxial film growth processes

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, Rama K [ORNL; Tselev, Alexander [ORNL; Baddorf, Arthur P [ORNL; Kalinin, Sergei V [ORNL

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in-situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED image, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the dataset are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of RHEED image sequence. This approach is illustrated for growth of LaxCa1-xMnO3 films grown on etched (001) SrTiO3 substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the assymetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  20. The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The epitaxial growth of GaN by Plasma Assisted Molecular Beam Epitaxy was investigated by Scanning Tunnelling Microscope (STM). The GaN film was grown on initial GaN (0001) and monitored by in situ Reflection High Energy Electron Diffraction and STM during the growth. The STM characterization was carried out on different sub-films with increased thickness. The growth of GaN was achieved in 3D mode, and the hexagonal edge of GaN layers and growth gradient were observed. The final GaN was of Ga polarity and kept as (0001) orientation, without excess Ga adlayers or droplets formed on the surface.

  1. Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

    OpenAIRE

    Sukrittanon, S.; Kuang, Y. J.; Dobrovolsky, Alexandr; Kang, Won-Mo; Jang, Ja-Soon; Kim, Bong-Joong; Chen, Weimin; Buyanova, Irina; Tu, C. W.

    2014-01-01

    We have demonstrated self-catalyzed GaN xP1−x and GaN xP1−x/GaNyP1−y core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaN xP1−x nanowires was observed to be comparable to that of GaP nanowires (∼585 °C to ∼615 °C). Transmission electron microscopy showed a mixture of cubic zincblende phase and hexagonal wurtzite phase along the [111] growth direction in GaN xP1−x nanowires. A temperature-dependent photoluminescence (PL) study performed on GaN xP1−x/GaNyP1...

  2. Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy

    International Nuclear Information System (INIS)

    The amount of residual H in the GaAsN film grown by chemical beam epitaxy (CBE) can be decreased by flow rate modulation growth. Many H atoms in the films grown by CBE exist as N-H or N-H2 structures. Although a higher growth temperature was required for decreasing the H concentration ([H]), it caused a decrease in the N concentration ([N]). A reduction in [H] while keeping [N] constant was necessary. By providing an intermittent supply of Ga source while continuously supplying As and N sources, [H] effectively decreased in comparison with the [H] value in the film grown at the same temperature by conventional CBE without reducing [N

  3. Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy

    International Nuclear Information System (INIS)

    Secondary ion mass spectroscopy (SIMS) was used to investigate carbon impurity concentrations in stoichiometric SrTiO3 films grown by a hybrid molecular beam epitaxy approach that uses an effusion cell to supply strontium, a rf plasma source for oxygen and a metal organic titanium source (titanium tetra isopropoxide). The carbon concentration in the films was measured as a function of growth parameters. At sufficiently high growth temperatures (>800 degree sign C), the films contain a few ppm of carbon. The challenges in accurately quantifying low carbon concentrations are discussed. A carbon-containing contamination layer is detected on the surfaces of SrTiO3 substrates and air-exposed films by SIMS and in scanning transmission electron microscopy. The contamination layer could be removed by high-temperature predeposition oxygen plasma cleaning.

  4. Epitaxial growth and electronic properties of mixed valence YbAl3 thin films

    Science.gov (United States)

    Chatterjee, Shouvik; Sung, Suk Hyun; Baek, David J.; Kourkoutis, Lena F.; Schlom, Darrell G.; Shen, Kyle M.

    2016-07-01

    We report the growth of thin films of the mixed valence compound YbAl3 on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction, in situ low-energy electron diffraction, and aberration-corrected scanning transmission electron microscopy, we establish that the films are ordered in the bulk as well as at the surface. Our films show a coherence temperature of 37 K, comparable to that reported for bulk single crystals. Photoelectron spectroscopy reveals contributions from both f13 and f12 final states establishing that YbAl3 is a mixed valence compound and shows the presence of a Kondo Resonance peak near the Fermi-level.

  5. Epitaxial growth mechanisms of graphene and effects of substrates

    Science.gov (United States)

    Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

    2012-06-01

    The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-heptagon defects. The activation barriers for the healing of these growth induced defects on various substrates are calculated using the climbing image nudge elastic band method and compared with that of the Stone-Wales defect. It is found that the healing of pentagon-heptagon defects occurring near the edge in the course of growth is much easier than that of Stone-Wales defect. The role of the substrate in the epitaxial growth and in the healing of defects are also investigated in detail, along with the effects of using carbon dimers as the building blocks of graphene growth.

  6. Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

    KAUST Repository

    Ganapathy, R.

    2010-01-21

    Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics of colloidal crystal films with single-particle resolution. We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation and growth laws that govern atomic epitaxy. However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsible for film morphology have a diffusive origin. This diffusive mechanism suggests new routes toward controlling film morphology during epitaxy.

  7. SiC epitaxy growth using chloride-based CVD

    International Nuclear Information System (INIS)

    The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers.

  8. Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Mohamed Lajnef

    2008-01-01

    Full Text Available GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD for different growth temperatures using atomic layer epitaxy (ALE technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM. The effect of growth temperature is studied using photoluminescence measurements (PL.The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to strain effect resulting from the lattice mismatch between GaAs and porous Si substrate.

  9. Highly ordered growth of PTCDA on epitaxial bilayer graphene

    Science.gov (United States)

    Meissner, Matthias; Gruenewald, Marco; Sojka, Falko; Udhardt, Christian; Forker, Roman; Fritz, Torsten

    2012-11-01

    For using the unique electronic properties of graphene in future nanoelectronic devices, control of the band structure is essential. While it has been shown already in the literature that this can be achieved by the deposition of organic molecules, little attention has been paid so far to the precise structural characterization of the interface. Here, we report on the epitaxial growth of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) layers on graphene, epitaxially grown on silicon carbide (SiC). The description of low energy electron diffraction (LEED) patterns of graphene on SiC by multiscattering is revisited. By means of a home-made algorithm used to correct radial distortions of the LEED images we are able to provide precise structural data of the PTCDA layers. By that, two different point-on-line types of PTCDA could be identified, one of which has neither been reported on graphite nor on graphene before.

  10. Crystal nucleation and near-epitaxial growth in nacre

    CERN Document Server

    Olson, Ian C; Tamura, Nobumichi; Kunz, Martin; Gilbert, Pupa U P A

    2013-01-01

    Nacre, the iridescent inner lining of many mollusk shells, interests materials scientists because of its unique brick-and-mortar periodic structure at the sub-micron scale and its remarkable resistance to fracture. However, it remains unclear how nacre forms. Here we present 20-nm, 2{\\deg}-resolution Polarization-dependent Imaging Contrast (PIC) images of shells from 15 species, mapping nacre tablets and their orientation patterns, showing where crystals nucleate and how they grow in nacre. In all shells we found stacks of co-oriented aragonite (CaCO3) tablets arranged into vertical columns or staggered diagonally. Only near the nacre-prismatic boundary are disordered crystals nucleated, as spherulitic aragonite. Overgrowing nacre tablet crystals are most frequently co-oriented with the underlying spherulitic aragonite or with another tablet, connected by mineral bridges. Therefore aragonite crystal growth in nacre is epitaxial or near-epitaxial, with abrupt or gradual changes in orientation, with c-axes with...

  11. Growth and characterization of YAG:Cr4+epitaxial films

    Science.gov (United States)

    Ubizskii, Sergii B.; Syvorotka, Igor M.; Melnyk, Sergii S.; Matkovskii, Andrej O.; Kopczynski, Krzysztof; Mierczyk, Zygmunt; Frukacz, Zygmunt

    1999-03-01

    Epitaxial films with thickness of 10 - 250 micrometers of yttrium aluminum garnet (YAG) doped with Cr were grown by liquid phase epitaxy technique on YAG:Nd substrates. Co-doping with Mg2+ is used to force the Cr4+ valent state formation. Dependence of absorption spectra of obtained films on melt-solution composition, growth conditions and thermal treatment in reducing and oxidizing atmospheres is studied. A very intensive absorption band in UV region with maximum at 275 nm was found both in co-doped and YAG:Mg2+ epifilms caused probably by oxygen vacancies compensating the excess charge of Mg2+. Its intensity correlates with Cr4+ content in the film in that way: it decreases with Cr4+ entering in the film. The absorption being characteristic for YAG:Cr4+ crystals is found in co-doped films grown at higher temperatures (1000 - 1100 degree(s)C). The processes occurring during annealing are discussed.

  12. Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties

    Science.gov (United States)

    Papadomanolaki, E.; Bazioti, C.; Kazazis, S. A.; Androulidaki, M.; Dimitrakopulos, G. P.; Iliopoulos, E.

    2016-03-01

    Indium gallium nitride films with compositions close to the middle of the miscibility gap and thickness approximately up to 0.5 μm were epitaxially grown on GaN(0001) by plasma-assisted molecular beam epitaxy at growth temperatures spanning a range of 400-590 °C. Epilayers were characterized by X-ray diffraction, transmission electron microscopy and Hall effect measurements. The effect of substrate temperature during growth, on the structural and electronic properties of the films, was studied. Single phase films, with record high electron mobilities were obtained at lower temperatures. Increased growth temperatures led to epilayers with higher defect densities and phase separation. Strain relaxation through sequestration layering and introduction of multiple basal stacking faults was observed at such temperatures.

  13. Transmission electron microscopy study of CdTe(111) grown on GaAs(100) by molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Reno, J.L.; Carr, M.J.; Gourley, P.L. (Sandia National Laboratory, Albuquerque, New Mexico 87185 (USA))

    1990-05-01

    We have used transmission electron microscopy to investigate CdTe(111) grown on GaAs(100) by molecular-beam epitaxy. The loop structure previously observed by photoluminescence microscopy has been identified as the boundary between twinned microcrystallites that extend from the CdTe/GaAs interface to the CdTe surface. When viewed along the growth axis, these boundaries between the columnar twins appear as loops and segments. Surface roughness of the GaAs substrate contributes to the initial growth of twinned material. This leads to competitive growth between the twins and the creation of the observed columnar twins.

  14. Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

    International Nuclear Information System (INIS)

    This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 deg. C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission.

  15. High quality YBCO superconductive thin films fabricated by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    CHEN; Fan

    2001-01-01

    [1]Hirata,K.,Yamamoto,K.,Iijinma,J.et al.,Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa2Cu3O7-x thin films,Appl.Phys.Lett.,1990,56(7):683-685.[2]Kingston,J.J.,Wellstood,F.C.,Lerch,P.et al.,Multilayer YBa2Cu3Ox-SrTiO3-YBa2Cu3Ox films for insulating crossovers,Appl.Phys.Lett.,1990,56(2):189-191.[3]Grundler,D.,Krumme,J.P.,David,B.et al.,YBa2Cu3O7 ramp-type junctions and superconducting quantum interference devices with an ultra thin barrier of NdGaO3,Appl.Phys.Lett.,1994,65(14):1841-1843.[4]Yang Guozhen,Lu Huibin,Chen Zhenghao et al.,Laser molecular beam epitaxy system and its key technologies,Science in China (in Chinese),Ser.A,1998,28(3):260-265.[5]Wang Ning,Lu Huibin,Chen,W.Z.et al.,Morphology and microstructure of BaTiO3/SrTiO3 superlattices grown on SrTiO3 by laser molecular-beam epitaxy,Appl.Phys.Lett.,1999,75(22):3464-3466.[6]Chen Li-Chyng,Particulates generated by pulsed laser ablation,in Pulsed Laser Deposition of Thin Films (eds.Chrisey,D.B.,Hulber,G.K.),New York:John Wiley & Sons,Inc.,1994,167-198.[7]Wang,H.S.,Dietsche,W.,Eissler,D.et al.,Molecular beam epitaxial growth and structure properties of DyBa2Cu3O7-y,J.Crys.Growth,1993,126:565-577.[8]Kita,R.,Hase,T.,Itti,R.et al.,Synthesis of CuO films using mass-separated,low-energy O+ ion beams,Appl.Phys.Lett.,1992,60(21):2684-2685.[9]Lu Huibin,Zhou Yueliang,Yang Guozhen et al.,Active gas source for thin film preparation,Chinese Patent (in Chinese),1996,No.ZL 96219046.2.[10]Wang Jing,Chen Fan,Zhao Tong et al.,Fabrication of high stable DC-SQUIDS with L-MBE YBCO thin films,Chinese Journal of Low Temperature Physics (in Chinese),1999,21(1):13-16.

  16. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr. [U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

    2013-08-19

    Thin AlN layers were grown at 200–650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ≤0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 °C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 °C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ≤ 400 °C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ≥ 500 °C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 °C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  17. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    The progress in the growth of nitride-based laser diodes (LDs) made by plasma-assisted molecular beam epitaxy (PAMBE) is reviewed. In this work we describe the GaN and InGaN growth peculiarities, p-type doping efficiency, and the properties of InGaN quantum wells (QWs) grown by PAMBE. We demonstrate continuous wave (cw) LDs operating in the range from 410 to 482 nm. These LDs were grown on low dislocation (0 0 0 1) c-plane bulk GaN substrate, which allow one to fabricate cw LDs with a lifetime exceeding 2000 h. Also, the ultraviolet LDs at 388 nm grown on (2 0 −2 1) semipolar substrates are discussed. The use of high active nitrogen fluxes up to 2 µm/h during the InGaN growth was essential for pushing the lasing wavelengths of PAMBE LDs above 460 nm. Recent advancement of InGaN growth by PAMBE allows one to demonstrate high-quality quantum QWs and excellent morphology for thick layers. We discuss the influence of LDs design on their parameters such as lasing threshold current and laser beam quality. (topical review)

  18. Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

    OpenAIRE

    Hudait, Mantu K.; Zhu, Yizheng; Maurya, Deepam; Priya, Shashank; Patra, Prabir K.; Ma, Anson W. K.; Aphale, Ashish; Macwan, Isaac

    2013-01-01

    Structural and band alignment properties of atomic layer Al2O3 oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented Ga...

  19. Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

    International Nuclear Information System (INIS)

    Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi2Se3 and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi2Se3 is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi2Se3 film down to the first quintuple layer without any second phase or an amorphous layer.

  20. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Control of the crystal phases of GaAs nanowires (NWs) is essential to eliminate the formation of stacking faults which deteriorate the optical and electronic properties of the NWs. In addition, the ability to control the crystal phase of NWs provides an opportunity to engineer the band gap without changing the crystal material. We show that the crystal phase of GaAs NWs grown on GaAs(111)B substrates by molecular beam epitaxy using the Au-assisted vapor–liquid–solid growth mechanism can be tuned between wurtzite (WZ) and zinc blende (ZB) by changing the V/III flux ratio. As an example we demonstrate the realization of WZ GaAs NWs with a ZB GaAs insert that has been grown without changing the substrate temperature. (paper)

  1. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low

  2. Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

    International Nuclear Information System (INIS)

    The characteristic green photoluminescence emission and related phenomena in Pb-doped, molecular-beam-epitaxy (MBE)-grown ZnSe crystal layers were investigated to explore the nature of the center responsible for the green emission. The intensity of the green emission showed a distinct nonlinear dependence on excitation intensity. Pb-diffused polycrystalline ZnSe was similarly examined for comparison. The characteristic green emission has been observed only in MBE-grown ZnSe crystal layers with moderate Pb doping. The results of the investigations on the growth conditions, luminescence, and related properties of the ZnSe crystal layers suggest that the green emission is due to isolated Pb replacing Zn and surrounded with regular ZnSe lattice with a high perfection

  3. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States); Bader, Samuel [Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  4. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    Energy Technology Data Exchange (ETDEWEB)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  5. Greatly improved interfacial passivation of in-situ high κ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    Energy Technology Data Exchange (ETDEWEB)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19

    A high-quality high-κ/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high κ dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5 Å to 1 Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high κ dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-κ/Ge interface using the Ge epi-layer approach.

  6. Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

    International Nuclear Information System (INIS)

    We present the growth of single, site-controlled InAs quantum dots on GaAs templates using UV-nanoimprint lithography and molecular beam epitaxy. A large quantum dot array with a period of 1.5 µm was achieved. Single quantum dots were studied by steady-state and time-resolved micro-photoluminescence experiments. We obtained single exciton emission with a linewidth of 45 µeV. In time-resolved experiments, we observed decay times of about 670 ps. Our results underline the potential of nanoimprint lithography and molecular beam epitaxy to create large-scale, single quantum dot arrays. (paper)

  7. Epitaxy physical principles and technical implementation

    CERN Document Server

    Herman, Marian A; Sitter, Helmut

    2004-01-01

    Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

  8. Epitaxial growth of visible to infra-red transparent conducting In2O3 nanodot dispersions and reversible charge storage as a Li-ion battery anode

    OpenAIRE

    Khunsin, W.; Sotomayor Torres, C. M.; O'Dwyer, Colm

    2013-01-01

    Unique bimodal distributions of single crystal epitaxially grown In2O3 nanodots on silicon are shown to have excellent IR transparency greater than 87% at IR wavelengths up to 4 μm without sacrificing transparency in the visible region. These broadband antireflective nanodot dispersions are grown using a two-step metal deposition and oxidation by molecular beam epitaxy, and backscattered diffraction confirms a dominant (111) surface orientation. We detail the growth of a bimodal size distribu...

  9. Magnetotransport in MgO-based magnetic tunnel junctions grown by molecular beam epitaxy (invited)

    International Nuclear Information System (INIS)

    The strong impact of molecular beam epitaxy growth and Synchrotron Radiation characterization tools in the understanding of fundamental issues in nanomagnetism and spintronics is illustrated through the example of fully epitaxial MgO-based Magnetic Tunnel Junctions (MTJs). If ab initio calculations predict very high tunnel magnetoresistance (TMR) in such devices, some discrepancy between theory and experiments still exists. The influence of imperfections in real systems has thus to be considered like surface contaminations, structural defects, unexpected electronic states, etc. The influence of possible oxygen contamination at the Fe/MgO(001) interface is thus studied, and is shown to be not so detrimental to TMR as predicted by ab initio calculations. On the contrary, the decrease of dislocations density in the MgO barrier of MTJs using Fe1−xVx electrodes is shown to significantly increase TMR. Finally, unexpected transport properties in Fe1−XCox/MgO/Fe1−XCox (001) are presented. With the help of spin and symmetry resolved photoemission and ab initio calculation, the TMR decrease for Co content higher than 25% is shown to come from the existence of an interface state and the shift of the empty Δ1 minority spin state towards the Fermi level

  10. MnTe and ZnTe grown on sapphire by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Przezdziecka, E. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)], E-mail: Ewa.Przezdziecka@ifpan.edu.pl; Dynowska, E.; Paszkowicz, W.; Dobrowolski, W. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Kepa, H. [Institute of Experimental Physics, ul. Hoza 69, 00-681 Warsaw (Poland); Majkrzak, C.F. [Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States); Giebultowicz, T.M. [Physics Department, Oregon State University, Corvallis, OR 97331 (United States); Janik, E. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Kossut, J. [Institute of Physics, Polish Academy of Sciences, and ERATO Semiconductor Spintronics Project, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

    2008-06-02

    We report on growth of MnTe layers by molecular beam epitaxy on Al{sub 2}O{sub 3} substrates and of ZnTe layers on hybrid MnTe/Al{sub 2}O{sub 3} substrates. The aim of our work was to prepare hexagonal phases of epitaxial thin films of these two materials. In the case of MnTe, the hexagonal NiAs-type phase was prepared by depositing the film directly on Al{sub 2}O{sub 3} substrates. On the other hand, the crystal structure of ZnTe layers grown on hybrid MnTe/Al{sub 2}O{sub 3} substrates was found to depend on the layer thickness: layers thinner than 0.05 {mu}m grew in a metastable hexagonal wurtzite structure, but with further increases of the thickness, the cubic zinc blende phase of ZnTe tended to appear. The structural properties of MnTe and ZnTe layers were characterized by high energy electron and X-ray diffraction methods. Electrical properties of MnTe films were assessed by the Hall effect measurements. The topography and microstructure were analyzed by atomic force microscope. The Neel temperature and magnetic domains structure of antiferromagnetic hexagonal MnTe layers were obtained from neutron experiments.

  11. Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

    Science.gov (United States)

    Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Korolkov, Vladimir V.; Cho, YongJin; Mellor, Christopher J.; Foxon, C. Thomas; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

    2016-01-01

    Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene. PMID:26928710

  12. Growth of c-plane ZnO on γ-LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Highlights: • ZnO epilayers were grown on LiAlO2 (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 1010 cm−2) as compared to those grown on LiAlO2 substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission

  13. Growth of c-plane ZnO on γ-LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yan, T. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 (China); Lu, C.-Y.J. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Schuber, R. [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, DE-76131 Karlsruhe (Germany); Chang, L., E-mail: lwchang@mail.nsysu.edu.tw [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Schaadt, D.M. [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, DE-76131 Karlsruhe (Germany); Institute of Energy Research and Phyiscal Technologies, Clausthal Technical University, Am Stollen 19B, D-38640 Goslar (Germany); Chou, M.M.C.; Ploog, K.H. [Department of Materials and Optoelectronic Science/Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Chiang, C.-M. [Department of Chemistry, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China)

    2015-10-01

    Highlights: • ZnO epilayers were grown on LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO{sub 2} (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 10{sup 10} cm{sup −2}) as compared to those grown on LiAlO{sub 2} substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission.

  14. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    International Nuclear Information System (INIS)

    We report the growth and characterization of III-nitride ternary thin films (AlxGa1−xN, InxAl1−xN and InxGa1−xN) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxyGrowth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures

  15. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-08-31

    We report the growth and characterization of III-nitride ternary thin films (Al{sub x}Ga{sub 1−x}N, In{sub x}Al{sub 1−x}N and In{sub x}Ga{sub 1−x}N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxyGrowth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures.

  16. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    Science.gov (United States)

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells. PMID:22889019

  17. An extension of the concept of epitaxial growth

    Science.gov (United States)

    Sarig, Sara; Hirsch, Danielle; Garti, Nissim; Goldwasser, Benad

    1984-11-01

    The experimental conditions to maintain metastability in a solution of calcium oxalate during 15 min were defined. Seed crystals of uric acid and sodium urate were added and the decrease of calcium ion concentration was measured by a calcium selective electrode. Sodium urate crystals caused a decrease of about 14% while uric acid seeds were inactive. The growth of calcium oxalate on sodium urate surface was confirmed by X-ray emission analysis. When glumatic acid was added at 4-5 ppm concentration to the metastable solution containing uric acid seeds, a ca. 28% calcium concentration decrease was observed. The precipitation of calcium oxalate on uric acid was confirmed by X-ray emission analysis. The results show that a structural fit at an atomic level between two solids, which is a necessary condition for epitaxis, is not sufficient for epitaxial growth to occur. An additional factor, namely attraction at an ionic or molecular level, is also needed. It may be furnished by a mediating agent compatible with both solids.

  18. Growth and characterization of epitaxial NiMnSb/ZnTe/NiMnSb magnetic multilayers

    Science.gov (United States)

    Gerhard, F.; Naydenova, T.; Baussenwein, M.; Schumacher, C.; Gould, C.; Molenkamp, L. W.

    2016-02-01

    The half-metal ferromagnet NiMnSb, with its high spin polarization, low magnetic damping and tunable magnetic anisotropy, is a promising material for applications in spin torque devices. We develop the epitaxial growth of NiMnSb/ZnTe/NiMnSb heterostructures, aiming towards the realization of an all-NiMnSb based magnetic tunneling junction (MTJ). Layers are grown in situ by Molecular Beam Epitaxy (MBE) and Atomic Layer Epitaxy (ALE) methods. By tuning Mn content, the magnetic anisotropy of each of the two NiMnSb layers is adjusted in order to achieve mutually orthogonal uniaxial anisotropies. SQUID measurements of the magnetization along orthogonal crystal directions [110] and [ 1 1 bar 0] confirm that the two layers have mutually orthogonal anisotropy. High Resolution X-Ray Diffraction measurements and simulations confirm the nominal layer stack and demonstrate the high crystalline quality of the individual layers. Such layer stacks provide a potential basis for TMR-based spin-torque devices such as spin-torque oscillators.

  19. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  20. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

    2014-04-15

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  1. Epitaxial growth with pulsed deposition: Submonolayer scaling and Villain instability

    DEFF Research Database (Denmark)

    Hinnemann, Berit; Hinrichsen, H.; Wolf, D.E.

    2003-01-01

    It has been observed experimentally that under certain conditions, pulsed laser deposition (PLD) produces smoother surfaces than ordinary molecular beam epitaxy (MBE). So far, the mechanism leading to the improved quality of surfaces in PLD is not yet fully understood. In the present work, we...... investigate the physical properties of a simple model for PLD, in which the transient mobility of adatoms and diffusion along edges is neglected. Analyzing the crossover from MBE to PLD, the scaling properties of the time-dependent nucleation density as well as the influence of Ehrlich-Schwoebel barriers, we...... find that there is indeed a range of parameters, where the surface quality in PLD is better than in MBE. However, since the improvement is weak and occurs only in a small range of parameters we conclude that deposition in pulses alone cannot explain the experimentally observed smoothness of PLD...

  2. Growth and features of epitaxial graphene on SiC

    International Nuclear Information System (INIS)

    Recent progress of epitaxial graphene on SiC was reviewed, focusing on its growth and structural and electronic features. Homogeneous graphene can be grown on SiC(0001) on a wafer scale, however on SiC(0001-bar) multilayer but rotationally stacked graphene with monolayer like electronic property grows. HRTEM revealed the formation mechanism and structural features of graphene on the both surfaces. The high structural and electronic quality of the grown graphene is monitored by Raman spectroscopy and magneto-transport characterization. High-resolution ARPES measurements of the electronic dispersion around the K-bar-point retrieved the ABA and ABC stacked trilayer graphene. The measurements also directly revealed that electronic structures of graphene were manipulated by transfer doping and atomic intercalation. In particular, p- and n-doped regions on a meso-scale and the p–n junctions prepared on SiC via controlling intercalation of Ge exhibited ballistic transport and Klein tunneling, which predicted novel potentials on to epitaxial graphene on SiC. (author)

  3. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2x1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

  4. Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

    International Nuclear Information System (INIS)

    InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.

  5. Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

    International Nuclear Information System (INIS)

    Transmission and scanning electron microscopies are used to examine the epitaxial lateral overgrowth of GaN on GaN nanocolumns grown on AlN/(0001)sapphire by molecular beam epitaxy. Initially, N-rich growth gave a bimodal morphology consisting of defect-free Ga-polar nanocolumns emanating from a compact, highly defective N-polar layer. Under subsequent Ga-rich conditions, the nanocolumns grew laterally to produce continuous Ga-polar overlayers. Threading dislocation (TD) densities in the overlayer were in the range of 108-109 cm-2, up to two orders of magnitude less than in the N-polar underlayer. It is proposed that the change in polarity is a key factor controlling the reduction in TD density

  6. Late growth stages and post-growth diffusion in organic epitaxy: PTCDA on Ag(111)

    OpenAIRE

    Krause, B.; Duerr, A. C.; Schreiber, F.; Dosch, H.; Seeck, O.H.

    2004-01-01

    The late growth stages and the post-growth diffusion of crystalline organic thin films have been investigated for 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on Ag(111), a model system in organic epitaxy. In situ x-ray measurements at the anti-Bragg point during the growth show intensity oscillations followed by a time-independent intensity which is independent of the growth temperature. At T > 350 K, the intensity increases after growth up to a temperature-dependent saturation value...

  7. Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence

    International Nuclear Information System (INIS)

    Epitaxial CoSi2 layers, which are phase pure but contain {111} twins, are grown on Si(001) at 700 deg. C by reactive deposition epitaxy. Transmission electron microscopy analyses show that the initial formation of CoSi2(001) follows the Volmer-Weber mode characterized by the independent nucleation and growth of three-dimensional islands whose evolution we follow as a function of deposited Co thickness t Co in order to understand the origin of the observed twin density. We find that there are two families of island shapes: inverse pyramids and platelets. The rectangular-based pyramidal islands extend along orthogonal directions, bounded by four {111} CoSi2/Si interfaces, and grow with a cube-on-cube orientation with respect to the substrate: (001)CoSi2 parallel (001)Si and [100]CoSi2 parallel [100]Si. Platelet-shaped CoSi2 islands are bounded across their long directions by {111} twin planes (i.e. {111}(001)CoSi2 parallel {111}Si) and their narrow directions by {511}CoSi2 parallel {111}Si interfaces. The top and bottom surfaces are {22-bar1}, with {22-bar1}CoSi2||(001)Si, and {1-bar1-bar1}, with {1-bar1-bar1}CoSi2 parallel {11-bar1}Si, respectively. The early stages of film growth (t Co ≤ 13 A) are dominated by the twinned platelets due to a combination of higher nucleation rates resulting from a larger number of favorable adsorption sites in the Si(001)2 x 1 surface unit cell and rapid elongation of the platelets along preferred directions. However, at t Co ≥ 13 A island coalescence becomes significant as orthogonal platelets intersect and block elongation along fast growth directions. In this regime, where both twinned and untwinned island number densities have saturated, further island growth becomes dominated by the untwinned islands. A continuous epitaxial CoSi2(001) layer, with a twin density of 2.8 x 1010 cm-2, is obtained at t Co = 50 A

  8. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

    International Nuclear Information System (INIS)

    The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (Ts ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of Ts ≈ 750°C and growth conditions providing enrichment with metal is shown

  9. Controlled epitaxial graphene growth within removable amorphous carbon corrals

    Science.gov (United States)

    Palmer, James; Kunc, Jan; Hu, Yike; Hankinson, John; Guo, Zelei; Berger, Claire; de Heer, Walt A.

    2014-07-01

    We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200 °C, mobile SiC steps accumulate at the aC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth at temperatures above 1330 °C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.

  10. Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mahavadi, K.K.; Bleuse, J.; Sivananthan, S.; Faurie, J.P. (Microphysics Laboratory, Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60680 (USA))

    1990-05-21

    We present the results of low-temperature photoluminescence and stimulated emission experiments performed on a CdTe/Hg{sub 0.45}Cd{sub 0.55}Te/Hg{sub 0.67}Cd{sub 0.33}Te multiquantum well separate confinement heterostructure grown by molecular beam epitaxy. The photoluminescence results suggest that because of the growth conditions, there is a strong interdiffusion in the multiquantum well region. Pulsed stimulated emission was observed from this structure up to 77 K.

  11. Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy

    OpenAIRE

    Xie, MH; Wu, HS; Shi, BM; Wang, N.; Tong, SY

    2006-01-01

    GaN exists in both wurtzite and zinc-blende phases and the growths of the two on its (0001) or (111) surfaces are achieved by choosing proper deposition conditions of molecular-beam epitaxy (MBE). At low substrate temperatures but high gallium fluxes, metastable zinc-blende GaN films are obtained, whereas at high temperatures and/or using high nitrogen fluxes, equilibrium wurtzite phase GaN epilayers resulted. This dependence of crystal structure on substrate temperature and source flux is no...

  12. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

    OpenAIRE

    Young Sheng-Joue; Wu Ya-Ling; Chen Yue-Zhang; Hung Hung; Wang Shih-Ming; Chen Kuan-Jen; Liu Kuang-Wei; Chang Shoou-Jinn; Hsueh Tao-Hung; Mai Yu-Chun

    2011-01-01

    Abstract The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the ...

  13. (GaMn)As: GaAs-based III?V diluted magnetic semiconductors grown by molecular beam epitaxy

    Science.gov (United States)

    Hayashi, T.; Tanaka, M.; Nishinaga, T.; Shimada, H.; Tsuchiya, H.; Otuka, Y.

    1997-05-01

    We have grown novel III-V diluted magnetic semiconductors, (Ga 1 - xMn x)As, on GaAs substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth conditions. When the Mn concentration x is relatively low (≲0.08), homogeneous alloy semiconductors, GaMnAs, are grown with zincblende structure and slightly larger lattice constants than that of GaAs, whereas inhomogeneous structures with zincblende GaMnAs (or GaAs) plus hexagonal MnAs are formed when x is relatively high. Magnetization measurements indicate that the homogeneous GaMnAs films have ferromagnetic ordering at low temperature.

  14. Thickness control of molecular beam epitaxy grown layers at the 0.01–0.1 monolayer level

    International Nuclear Information System (INIS)

    Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected. (paper)

  15. Room temperature weak ferromagnetism in Sn1-xMnxSe2 2D films grown by molecular beam epitaxy

    Science.gov (United States)

    Dong, Sining; Liu, Xinyu; Li, Xiang; Kanzyuba, Vasily; Yoo, Taehee; Rouvimov, Sergei; Vishwanath, Suresh; Xing, Huili G.; Jena, Debdeep; Dobrowolska, Margaret; Furdyna, Jacek K.

    2016-03-01

    We discuss growth and magnetic properties of high-quality two dimensional (2D) Sn1-xMnxSe2 films. Thin films of this 2D ternary alloy with a wide range of Mn concentrations were successfully grown by molecular beam epitaxy. Mn concentrations up to x ≈ 0.60 were achieved without destroying the crystal structure of the parent SnSe2 2D system. Most important, the specimens show clear weak ferromagnetic behavior above room temperature, which should be of interest for 2D spintronic applications.

  16. Magnetic properties of Fe films and Fe/Si/Fe trilayers grown on GaAs(001) and MgO(001) by ion-beam sputter epitaxy

    International Nuclear Information System (INIS)

    We grow monocrystalline Fe(001) films and Fe/Si/Fe(001) trilayers by ion-beam sputter epitaxy on GaAs(001) and MgO(001) substrates. Ion-beam sputtering parameters such as substrate presputtering time, substrate temperature, beam voltage, and target angle are optimized for 10-nm-thick Fe(001) films with respect to epitaxial growth and magnetic properties. In situ low-energy electron diffraction patterns confirm the epitaxial and monocrystalline nature of the sputtered films, surprisingly even on untreated and thus oxidized substrates. The magneto-optical Kerr effect and ferromagnetic resonance are employed to investigate the magnetic properties, and the structural properties are characterized by atomic force microscopy and x-ray reflectivity measurements. Using the optimized set of parameters that yields the best magnetic properties for single Fe films on GaAs, we deposit epitaxial Fe/Si/Fe(001) structures and observe antiferromagnetic interlayer exchange coupling for epitaxially sputtered Fe/Si/Fe(001) trilayers on GaAs(001). The total coupling strength reaches values of up to 2 mJ/m2 at a Si thickness of 15 A

  17. Epitaxial Growth of Single Layer Blue Phosphorus: A New Phase of Two-Dimensional Phosphorus.

    Science.gov (United States)

    Zhang, Jia Lin; Zhao, Songtao; Han, Cheng; Wang, Zhunzhun; Zhong, Shu; Sun, Shuo; Guo, Rui; Zhou, Xiong; Gu, Cheng Ding; Yuan, Kai Di; Li, Zhenyu; Chen, Wei

    2016-08-10

    Blue phosphorus, a previously unknown phase of phosphorus, has been recently predicted by theoretical calculations and shares its layered structure and high stability with black phosphorus, a rapidly rising two-dimensional material. Here, we report a molecular beam epitaxial growth of single layer blue phosphorus on Au(111) by using black phosphorus as precursor, through the combination of in situ low temperature scanning tunneling microscopy and density functional theory calculation. The structure of the as-grown single layer blue phosphorus on Au(111) is explained with a (4 × 4) blue phosphorus unit cell coinciding with a (5 × 5) Au(111) unit cell, and this is verified by the theoretical calculations. The electronic bandgap of single layer blue phosphorus on Au(111) is determined to be 1.10 eV by scanning tunneling spectroscopy measurement. The realization of epitaxial growth of large-scale and high quality atomic-layered blue phosphorus can enable the rapid development of novel electronic and optoelectronic devices based on this emerging two-dimensional material. PMID:27359041

  18. Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Fireman, Micha N.; Browne, David A.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2016-02-07

    The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditions that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.

  19. Single-crystalline BaTiO3 films grown by gas-source molecular beam epitaxy

    Science.gov (United States)

    Matsubara, Yuya; Takahashi, Kei S.; Tokura, Yoshinori; Kawasaki, Masashi

    2014-12-01

    Thin BaTiO3 films were grown on GdScO3 (110) substrates by metalorganic gas-source molecular beam epitaxy. Titanium tetra-isopropoxide (TTIP) was used as a volatile precursor that provides a wide growth window of the supplied TTIP/Ba ratio for automatic adjustment of the film composition. Within the growth window, compressively strained films can be grown with excellent crystalline quality, whereas films grown outside of the growth window are relaxed with inferior crystallinity. This growth method will provide a way to study the intrinsic properties of ferroelectric BaTiO3 films and their heterostructures by precise control of the stoichiometry, structure, and purity.

  20. Scanning Tunneling Microscopy Studies of Topological Insulators Grown by Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Xue Qikun

    2012-03-01

    Full Text Available We summarize our recent scanning tunneling microscopy (STM study of topological insulator thin films grown by molecular beam epitaxy (MBE, which includes the observation of electron standing waves on topological insulator surface and the Landau quantization of topological surface states. The work has provided valuable information to the understanding of intriguing properties of topological insulators, as predicted by theory.

  1. Controlling the crystal phase and structural quality of epitaxial InAs nanowires by tuning V/III ratio in molecular beam epitaxy

    International Nuclear Information System (INIS)

    In this study, we demonstrated the control of crystal phase and structural quality of Au-catalyzed InAs nanowires grown on the GaAs {1 1 1}B substrates by tuning the V/III ratio in molecular beam epitaxy. It has been found that InAs nanowires can only be grown in a relatively narrow window of the V/III ratio. It is also demonstrated that the V/III ratio can be used to control the structural quality of wurtzite structured and zinc-blende structured InAs nanowires under low V/III ratios, and defect-free wurtzite structured and zinc-blende structured InAs nanowires were successfully achieved. This study provides an insight into the controlled growth of high-quality wurtzite structured and zinc-blende structured InAs nanowires through the V/III ratio engineering

  2. Investigation of ZnO thin films deposited on ferromagnetic metallic buffer layer by molecular beam epitaxy toward realization of ZnO-based magnetic tunneling junctions

    International Nuclear Information System (INIS)

    Deposition of ZnO thin films on a ferromagnetic metallic buffer layer (Co3Pt) by molecular beam epitaxy technique was investigated for realization of ZnO-based magnetic tunneling junctions with good quality hexagonal ZnO films as tunnel barriers. For substrate temperature of 600 °C, ZnO films exhibited low oxygen defects and high electrical resistivity of 130 Ω cm. This value exceeded that of hexagonal ZnO films grown by sputtering technique, which are used as tunnel barriers in ZnO-MTJs. Also, the effect of oxygen flow during deposition on epitaxial growth conditions and Co3Pt surface oxidation was discussed.

  3. Plasma-assisted molecular beam epitaxy of (11-22)-oriented 3-nitrides

    International Nuclear Information System (INIS)

    This work reports on the molecular-beam epitaxial growth of (1122)-oriented semi-polar nitride semiconductors using m-sapphire substrates. The (1122) crystallographic orientation is predefined by AlN deposition on m-sapphire under N excess. On top of this AlN buffer layer, undoped or Si-doped two-dimensional GaN(1122) films are formed under Ga-rich conditions, with a stabilized Ga-excess ad-layer of about 1.05±0.10 ML. In contrast, Mg tends to segregate on the GaN surface, inhibiting the self-regulated Ga excess film. Nevertheless, uniform Mg incorporation can be obtained, and p-type conductivity was achieved. GaN/AlN quantum wells are synthesized by deposition of the binary compounds under the above-described conditions. In the case of GaN/AlN quantum dots, the three-dimensional transition is induced by a growth interruption under vacuum. The reduction of the internal electric field in GaN/AlN nano-structures is confirmed by the blue shift of the photoluminescence spectrum and by the short photoluminescence decay times measured at low temperature. These results are consistent with theoretical calculations of the electronic structure. (author)

  4. Structural and morphological evolution of gallium nitride nanorods grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    The morphological and structural evolution is presented for GaN nanorods grown by chemical beam epitaxy on (0001) Al2O3 substrates. Their structural and optical properties are investigated by x-ray diffraction, scanning and transmission electron microscopy, and temperature-dependent photoluminescence measurements. While increasing the growth temperature and the flow rate of radio-frequency nitrogen radical, the three-dimensional growth mode will be enhanced to form one-dimensional nanostructures. The high density of well-aligned nanorods with a diameter of 30-50 nm formed uniformly over the entire sapphire substrate. The x-ray diffraction patterns and transmission electron microscopic images indicate that the self-assembled GaN nanorods are a pure single crystal and preferentially oriented in the c-axis direction. Particularly, the ''S-shape'' behavior with localization of ∼10 meV observed in the temperature-dependent photoluminescence might be ascribed to the fluctuation in crystallographic defects and composition.

  5. Structural and morphological evolution of gallium nitride nanorods grown by chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kuo, Shou-Yi; Lai, Fang-I; Chen, Wei-Chun; Hsiao, Chien-Nan; Lin, Woei-Tyng [Department of Electronic Engineering, Chang Gung University, Taiwan, Green Technology Research Center, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan (China); Department of Electrical Engineering, Yuan-Ze University, Taiwan, 135, Far-East Rd., Chung-Li, Taoyuan, Tao-Yuan, 320, Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Taiwan, 20 R and D Road VI, Hsinchu Science Park, Hsinchu 300, Taiwan (China); Department of Electrical Engineering, Yuan-Ze University, Taiwan, 135, Far-East Road, Chung-Li, Taoyuan, Tao-Yuan, 320, Taiwan (China)

    2009-07-15

    The morphological and structural evolution is presented for GaN nanorods grown by chemical beam epitaxy on (0001) Al{sub 2}O{sub 3} substrates. Their structural and optical properties are investigated by x-ray diffraction, scanning and transmission electron microscopy, and temperature-dependent photoluminescence measurements. While increasing the growth temperature and the flow rate of radio-frequency nitrogen radical, the three-dimensional growth mode will be enhanced to form one-dimensional nanostructures. The high density of well-aligned nanorods with a diameter of 30-50 nm formed uniformly over the entire sapphire substrate. The x-ray diffraction patterns and transmission electron microscopic images indicate that the self-assembled GaN nanorods are a pure single crystal and preferentially oriented in the c-axis direction. Particularly, the ''S-shape'' behavior with localization of {approx}10 meV observed in the temperature-dependent photoluminescence might be ascribed to the fluctuation in crystallographic defects and composition.

  6. Electrical properties of GaAsN film grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    The local vibrational modes (LVMs) observed by Fourier transform infrared (FTIR) spectroscopy in GaAsN films grown by chemical beam epitaxy (CBE) was studied, and the influence of the nitrogen-hydrogen bond (N-H) concentration on the hole concentration was investigated. The absorption peak around 936 cm-1 is suggested to be the second harmonic mode of the substitutional N, NAs, LVM around 469 cm-1. The absorption peak around 960 cm-1 is suggested to be the wagging mode of the N-H, where the stretch mode is observed around 3098 cm-1. The hole concentration linearly increases with increasing N-H concentration, and the slope increases with increasing growth temperature. It indicates that the hole concentration in GaAsN film is determined by both the number of the N-H and unknown defect, such as impurities, vacancies, and interstitials. This defect concentration increases with increasing growth temperature, suggesting that it is determined by Arrhenius type reaction

  7. Growth and structure of epitaxial CeO2 films on yttria-stabilized ZrO2

    International Nuclear Information System (INIS)

    Thirty to a hundred-nm thick epitaxial CeO2 layers are grown on YSZ (100), (110) and (111) surfaces of yttria-stabilized ZrO2 (YSZ) by electron beam evaporation of Ce in oxygen at reduced pressure. Their growth, structure and thermal stability are studied with several bulk and surface sensitive techniques including Rutherford backscattering spectrometry, cross-sectional high resolution electron microscopy, low energy electron diffraction and low energy reflection electron microscopy. Excellent epitaxy is obtained on all YSZ surfaces at a growth temperature of 750 K. The surfaces of films grown on (111)-oriented substrates are flat, whereas those on the other substrates are faceted into small (111) planes. The grain sizes in the films are in the 10 nm range and smaller

  8. Molecular beam epitaxy of GeTe-Sb{sub 2}Te{sub 3} phase change materials studied by X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Shayduk, Roman

    2010-05-20

    The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

  9. Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy

    International Nuclear Information System (INIS)

    We have demonstrated self-catalyzed GaNxP1−x and GaNxP1−x/GaNyP1−y core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaNxP1−x nanowires was observed to be comparable to that of GaP nanowires (∼585 °C to ∼615 °C). Transmission electron microscopy showed a mixture of cubic zincblende phase and hexagonal wurtzite phase along the [111] growth direction in GaNxP1−x nanowires. A temperature-dependent photoluminescence (PL) study performed on GaNxP1−x/GaNyP1−y core/shell nanowires exhibited an S-shape dependence of the PL peaks. This suggests that at low temperature, the emission stems from N-related localized states below the conduction band edge in the shell, while at high temperature, the emission stems from band-to-band transition in the shell as well as recombination in the GaNxP1−x core.

  10. Epitaxial layer-by-layer growth of Yb:YAG and YbAG PLD-films

    International Nuclear Information System (INIS)

    In this contribution, we report on the 2-dimensional (2D) layer-by-layer growth of Yb(10%):Y3Al5O12 (YAG) and Yb3Al5O12 (YbAG) PLD-films on {100}-oriented YAG. The epitaxial growth was observed in situ by Reflection High Energy Electron Diffraction (RHEED) as intensity oscillations of the specularly reflected electron beam. The properties of the films were investigated ex situ by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and optical spectroscopy. The optical emission spectra of the films are similar to those of the corresponding crystalline bulk materials. (orig.)

  11. Lutetium-doped EuO films grown by molecular-beam epitaxy

    OpenAIRE

    Melville, A; Mairoser, T.; Mannhart, J.; Schlom, D. G.; Schmehl, A.; Shai, D. E.; Monkman, E. J.; Harter, J. W.; Heeg, T.; Holländer, B; Schubert, J; Shen, K. M.

    2012-01-01

    The effect of lutetium doping on the structural, electronic, and magnetic properties of epitaxial EuO thin films grown by reactive molecular-beam epitaxy is experimentally investigated. The behavior of Lu-doped EuO is contrasted with doping by lanthanum and gadolinium. All three dopants are found to behave similarly despite differences in electronic configuration and ionic size. Andreev reflection measurements on Lu-doped EuO reveal a spin-polarization of 96% in the conduction band, despite n...

  12. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

  13. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions...

  14. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their...

  15. Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

    Science.gov (United States)

    Nicolaï, J.; Warot-Fonrose, B.; Gatel, C.; Teissier, R.; Baranov, A. N.; Magen, C.; Ponchet, A.

    2015-07-01

    Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by high angle annular dark field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence.

  16. Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

    Energy Technology Data Exchange (ETDEWEB)

    Nicolaï, J.; Warot-Fonrose, B.; Gatel, C., E-mail: christophe.gatel@cemes.fr; Ponchet, A. [CEMES CNRS-UPR 8011, Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France); Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS-Universidad de Zaragoza, Toulouse (France); Teissier, R.; Baranov, A. N. [IES CNRS-UMR 5214, 34095 Montpellier (France); Magen, C. [Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS-Universidad de Zaragoza, Toulouse (France); Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragón (INA)—ARAID and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-07-21

    Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by high angle annular dark field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence.

  17. Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

    International Nuclear Information System (INIS)

    Structural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by high angle annular dark field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence

  18. Growing high-quality ternary CdMnTe epilayers by molecular beam epitaxy on Si substrates and its mechanism

    International Nuclear Information System (INIS)

    Cd(Mn,Zn)Te-based ternary compound semiconductors with wide band-gaps are important in the detection of radiation and photovoltaic applications. This study characterizes Cd1-xMnxTe epilayers on Si substrates with various Mn compositions grown by molecular beam epitaxy. The surface smoothness, crystallinity and optical quality all are significantly improved with increasing Mn content. The Cd0.61Mn0.39Te epilayer with a thickness of only about 500 nm yields a full width at half maximum of the X-ray rocking curve of 165 arcsec. Photoluminescence spectra at 10 K show that the intensity of defect-related emissions is much lower than that of binary CdTe epilayers, reaching zero from the samples with high Mn content, while the integral intensity of the exciton-related emissions is increased by more than two orders of magnitude. Raman scattering spectra reveal that the intensity of the Te–Te related defect vibration modes falls significantly as the Mn content increase, even disappearing altogether in the samples with high Mn content. This work proposes that incorporating Mn atoms during epitaxial growth can promote the decomposition of Te2 sources, owing to the high sticking coefficient of Mn and the high cohesive energy of the Mn–Te bond, and then reduce the number of Te–Te related stacking fault defects, yielding high-quality CdMnTe epilayers. Our results herein demonstrate that the CdMnTe ternary epilayers are much more promising in terms of material quality than the CdZnTe ternary epilayers. - Highlights: • High-quality ternary CdMnTe were grown on Si substrates by molecular beam epitaxy. • The material qualities were significantly improved with increasing Mn content. • The Te–Te related defects were greatly reduced with increasing Mn content. • We report an enhanced growth of CdTe-based epilayers by the incorporation of Mn atoms

  19. Hollow-anode plasma source for molecular beam epitaxy of gallium nitride

    International Nuclear Information System (INIS)

    GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30 endash 40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the open-quote open-quote anode close-quote close-quote plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al2O3 at 600 endash 800 degree C. The films were investigated by photoluminescence, cathodoluminescence, x-ray diffraction, Rutherford backscattering, and particle-induced x-ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date. copyright 1996 American Institute of Physics

  20. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

    Science.gov (United States)

    Malik, R. J.; Nottenberg, R. N.; Schubert, E. F.; Walker, J. F.; Ryan, R. W.

    1988-01-01

    Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

  1. Growth and Characterization of Epitaxial Oxide Thin Films

    OpenAIRE

    Garg, Ashish

    2001-01-01

    Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device withi...

  2. Superconducting thin films of As-free pnictide LaPd1-xSb2 grown by reactive molecular beam epitaxy

    International Nuclear Information System (INIS)

    We use reactive molecular beam epitaxy as synthesis technique for the search of arsenic free pnictide superconductors. Epitaxial thin films of LaPd1-xSb2 were grown on (100) MgO substrates from elemental sources by simultaneous evaporation of high purity La, Pd and Sb metals by e-gun. LaPd1-xSb2 belongs to a novel class of pnictide superconductors with a peculiar pnictide square net layer. Previously, we have reported epitaxial growth of isostructural Bi based compounds. The substitution of Bi by Sb leads to thin films with metallic behavior and room temperature resistivity of about 85 μΩ cm. The highest observed transition temperature Tc inLaPd1-xSb2 is 3.1 K and does not depend on x. We discuss strategies to increase Tc in this pnictide subfamily.

  3. Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates

    Science.gov (United States)

    Nepal, Neeraj; Katzer, D. Scott; Meyer, David J.; Downey, Brian P.; Wheeler, Virginia D.; Storm, David F.; Hardy, Matthew T.

    2016-02-01

    β-Nb2N films and AlN/β-Nb2N heterojunctions were grown by molecular beam epitaxy (MBE) on 6H-SiC. The epitaxial nature and β-Nb2N phase were determined by symmetric and asymmetric high-resolution X-ray diffraction (HRXRD) measurements, and were confirmed by grazing incidence diffraction measurements using synchrotron photons. Measured lattice parameters and the in-plane stress of β-Nb2N on 6H-SiC were c = 5.0194 Å, a = 3.0558 Å, and 0.2 GPa, respectively. The HRXRD, transmission electron microscopy, and Raman spectroscopy revealing epitaxial growth of AlN/β-Nb2N heterojunctions have identical orientations with the substrate, abrupt interfaces, and bi-axial stress of 0.88 GPa, respectively. The current finding opens up possibilities for the next generation of high-power devices that cannot be fabricated at present.

  4. 4H-SiC epitaxial layer growth by trichlorosilane (TCS)

    Science.gov (United States)

    La Via, F.; Izzo, G.; Mauceri, M.; Pistone, G.; Condorelli, G.; Perdicaro, L.; Abbondanza, G.; Calcagno, L.; Foti, G.; Crippa, D.

    2008-12-01

    The growth rate of 4H-SiC epilayers has been increased up to 100 μm/h with the use of trichlorosilane instead of silane as the silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process. Both very low (100 μm) epitaxial layer has been grown and the Schottky diodes realized on these layers with a good yield (>87%). This process gives the opportunity to realize very high-power devices with breakdown voltages in the range of 10 kV with a low cost SiC epitaxy process.

  5. Structural and optical properties of Cd 0.7Hg 0.3Te-CdTe heterostructures grown by molecular beam epitaxy

    Science.gov (United States)

    Lentz, G.; Magnea, N.; Mariette, H.; Tuffigo, H.; Feuillet, G.; Fontenille, J.; Ligeon, E.; Saminadayar, K.

    1990-04-01

    Layers and single quantum wells of Cd xHg 1- xTe with x ⋍ 0.7 have been grown by molecular beam epitaxy. Structural analysis shows that growth free of defects (twins, dislocations) can be achieved on (111)Te Cd 0.96Zn 0.04Te substrates. The Photoluminescence analysis of the layers and the wells reveal that they are efficient light emittors in the 1.3-1.5 μm range.

  6. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen; Linderoth, Søren

    2011-01-01

    Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island...

  7. Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy

    Science.gov (United States)

    Chambers, Scott A.

    2006-02-21

    A method of making a spinel-structured metal oxide on a substrate by molecular beam epitaxy, comprising the step of supplying activated oxygen, a first metal atom flux, and at least one other metal atom flux to the surface of the substrate, wherein the metal atom fluxes are individually controlled at the substrate so as to grow the spinel-structured metal oxide on the substrate and the metal oxide is substantially in a thermodynamically stable state during the growth of the metal oxide. A particular embodiment of the present invention encompasses a method of making a spinel-structured binary ferrite, including Co ferrite, without the need of a post-growth anneal to obtain the desired equilibrium state.

  8. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

    Science.gov (United States)

    Li, Guoqiang; Wang, Wenliang; Yang, Weijia; Wang, Haiyan

    2015-11-01

    Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of group III-nitrides on thermally active substrates at low temperature. The precursors generated from the pulsed laser ablating the target has enough kinetic energy when arriving at substrates, thereby effectively suppressing the interfacial reactions between the epitaxial films and the substrates, and eventually makes the film growth at low temperature possible. So far, high-quality group III-nitride epitaxial films have been successfully grown on a variety of thermally active substrates by PLD. By combining PLD with other technologies such as laser rastering technique, molecular beam epitaxy (MBE), and metal-organic chemical vapor deposition (MOCVD), III-nitride-based light-emitting diode (LED) structures have been realized on different thermally active substrates, with high-performance LED devices being demonstrated. This review focuses on the epitaxial growth of group III-nitrides on thermally active substrates by PLD and their use in the development of LED devices. The surface morphology, interfacial property between film and substrate, and crystalline quality of as-grown group III-nitride films by PLD, are systematically reviewed. The corresponding solutions for film homogeneity on large size substrates, defect control, and InGaN films growth by PLD are also discussed in depth, together with introductions to some newly developed technologies for PLD in order to realize LED structures, which provides great opportunities for commercialization of LEDs on thermally active substrates.

  9. Low phonon energy Nd:LaF3 channel waveguide lasers fabricated by molecular beam epitaxy

    OpenAIRE

    Bhutta, T.; Chardon, A.M.; Shepherd, D. P.; Daran, E.; Serrano, C.; Munoz-Yague, A.

    2001-01-01

    We report the first fabrication and laser operation of channel waveguides based on LaF3 planar thin films grown by molecular beam epitaxy. To our knowledge, this is the lowest phonon energy dielectric material to have shown guided-wave laser operation to date. A full characterization, in terms of spectroscopy, laser results, and propagation losses, is given for the planar thin films upon which the channel waveguides are based. Two channel-fabrication methods are then described, the first invo...

  10. Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy

    Science.gov (United States)

    Cheng, F. J.; Lee, Y. C.; Hu, S. Y.; Lin, Y. C.; Tiong, K. K.; Chou, W. C.

    2016-05-01

    In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.

  11. Epitaxial growth of tungsten layers on MgO(001)

    International Nuclear Information System (INIS)

    Smooth single crystal W(001) layers were grown on MgO(001) substrates by magnetron sputtering at 900 °C. X-ray diffraction ω–2θ scans, ω-rocking curves, pole figures, and reciprocal space maps indicate a 45°-rotated epitaxial relationship: (001)W‖(001)MgO and [010]W‖[110]MgO, and a relaxed lattice constant of 3.167 ± 0.001 nm. A residual in-plane biaxial compressive strain is primarily attributed to differential thermal contraction after growth and decreases from −0.012 ± 0.001 to −0.001 ± 0.001 with increasing layer thickness d = 4.8–390 nm, suggesting relaxation during cooling by misfit dislocation growth through threading dislocation glide. The in-plane x-ray coherence length increases from 3.4 to 33.6 nm for d = 4.8–390 nm, while the out-of-plane x-ray coherence length is identical to the layer thickness for d ≤ 20 nm, but is smaller than d for d ≥ 49.7 nm, indicating local strain variations along the film growth direction. X-ray reflectivity analyses indicate that the root-mean-square surface roughness increases from 0.50 ± 0.05 to 0.95 ± 0.05 nm for d = 4.8–19.9 nm, suggesting a roughness exponent of 0.38, but remains relatively constant for d > 20 nm with a roughness of 1.00 ± 0.05 nm at d = 47.9 nm

  12. Mg incorporation in GaN grown by plasma-assisted molecular beam epitaxy at high temperatures

    Science.gov (United States)

    Yang, W. C.; Lee, P. Y.; Tseng, H. Y.; Lin, C. W.; Tseng, Y. T.; Cheng, K. Y.

    2016-04-01

    The influence of growth conditions on the incorporation and activation of Mg in GaN grown by plasma-assisted molecular beam epitaxy at high growth temperature (>700 °C) is presented. It is found that the highest Mg incorporation with optimized electrical properties is highly sensitive both to the Mg/Ga flux ratio and III/V flux ratio. A maximum Mg activation of ~5% can be achieved at a growth temperature of 750 °C. The lowest resistivity achieved is 0.56 Ω-cm which is associated with a high hole mobility of 6.42 cm2/V-s and a moderately high hole concentration of 1.7×1018 cm-3. Although the highest hole concentration achieved in a sample grown under a low III/V flux ratio and a high Mg/Ga flux ratio reaches 7.5×1018 cm-3, the mobility is suffered due to the formation of defects by the excess Mg. In addition, we show that modulated beam growth methods do not enhance Mg incorporation at high growth temperature in contrast to those grown at a low temperature of 500 °C (Appl. Phys. Lett. 93, 172112, Namkoong et al., 2008 [19]).

  13. Epitaxial Growth of High-Quality Silicon Films on Double-Layer Porous Silicon

    Institute of Scientific and Technical Information of China (English)

    黄宜平; 竺士炀; 李爱珍; 王瑾; 黄靖云; 叶志镇

    2001-01-01

    The epitaxial growth of a high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction,cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.

  14. Control growth of silicon nanocolumns' epitaxy on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

    2013-04-15

    The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

  15. Epitaxial growth of bcc transition metal films and superlattices onto MgO (111), (011) and (001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mattson, J.E.; Fullerton, E.E.; Sowers, C.H.; Bader, S.D.

    1994-04-01

    We demonstrate epitaxial growth of the bcc transition metals Nb, Mo, Fe, and Cr via sputtering onto single crystal MgO substrates. The epitaxial growth orientations are (011), (112) and (001) when grown onto MgO (111), (011) and (001), respectively. Further we demonstrate that under appropriate growth conditions, superlattices of these materials (e.g., Fe/Cr, Fe/V and Mo/V) can be grown with the same epitaxial order as the films.

  16. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

    OpenAIRE

    Yuryev Vladimir; Arapkina Larisa

    2011-01-01

    Abstract Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temper...

  17. Growth and magnetic properties of ultrathin epitaxial FeO films and Fe/FeO bilayers on MgO(001)

    Energy Technology Data Exchange (ETDEWEB)

    Kozioł-Rachwał, A., E-mail: akoziol@agh.edu.pl [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków (Poland); National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Ślęzak, T. [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków (Poland); Nozaki, T.; Yuasa, S. [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Korecki, J. [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków (Poland); Jerzy Haber Institute of Catalysis and Surface Chemistry, Polish Academy of Sciences, ul. Niezapominajek 8, 30-239 Kraków (Poland)

    2016-01-25

    Ultrathin FeO(001) films were grown via molecular beam epitaxy on MgO(001) using reactive deposition of Fe. The growth conditions were adjusted toward stabilization of the wüstite phase, the existence of which was confirmed by means of conversion electron Mössbauer spectroscopy. It was shown how the metallic Fe overlayer modified the chemical state and the magnetic properties of the FeO oxide. Finally, we observed the exchange bias for an epitaxial Fe/FeO bilayer grown on MgO(001)

  18. Growth and magnetic properties of ultrathin epitaxial FeO films and Fe/FeO bilayers on MgO(001)

    International Nuclear Information System (INIS)

    Ultrathin FeO(001) films were grown via molecular beam epitaxy on MgO(001) using reactive deposition of Fe. The growth conditions were adjusted toward stabilization of the wüstite phase, the existence of which was confirmed by means of conversion electron Mössbauer spectroscopy. It was shown how the metallic Fe overlayer modified the chemical state and the magnetic properties of the FeO oxide. Finally, we observed the exchange bias for an epitaxial Fe/FeO bilayer grown on MgO(001)

  19. Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Chine, Z.; Fitouri, H.; Zaied, I.; Rebey, A.; El Jani, B.

    2011-09-01

    A successful method to epitaxy GaAsBi layer on (0 0 1) GaAs substrate is proposed. During growth, alternated trimethyl bismuth (TMBi) flows were used. These TMBi flashes were switched on for a short time. The growth was monitored in situ by laser reflectometry using a 632.8 nm beam. The reflectance signal is found to change significantly during both bismuth flashes and GaAs growth stages. High-resolution X-ray diffraction (HRXRD), secondary ion mass spectroscopy (SIMS) and photoreflectance spectroscopy (PR) have been used to characterize the obtained GaAsBi layer. HRXRD curve shows a diffraction peak that can be attributed to a GaAsBi epilayer. SIMS measurements of GaAsBi layer suggest that bismuth diffuses faster near the interface. The PR spectrum indicates the band-to-band transition in GaAsBi layer. The band gap energy was determined by adjusting the PR spectrum with a multilayer model.

  20. Megaelectron volt ion beam-induced epitaxy of deposited silicon and germanium-silicon alloys on (100) silicon substrates

    International Nuclear Information System (INIS)

    Solid phase heteroepitaxial crystallization of GexSi1-x/(100) Si was induced by MeV ion bombardment while heating the substrate at low temperatures. Rutherford Backscatter Spectrometry (RBS), Ion Channeling, Secondary Ion Mass Spectroscopy (SIMS) and transmission electron microscopy (TEM) techniques were used to investigate the kinetics of the reordering process as well as characterize the strain in the resultant epitaxial layer. The epitaxial recrystallization of amorphous silicon and silicon-germanium layers on (100)silicon, deposited under medium (10-7 torr) vacuum conditions, was induced by 2.5 MeV Ar beam irradiation in the low temperature range of 200-400C. The regrowth follows an Arrhenius dependence with temperature and activation energies of ∼0.3 eV were determined for the regrowth of deposited Si and a Ge38Si62 alloy. Ion beam induced heteroepitaxy was found to be sensitive to interfacial contaminants. In addition, the resultant crystalline quality for Ge-rich alloys was poor after irradiation. Ion beam induced heteroepitaxy of MBE-deposited GexSi1-x/(100) Si, deposited under high vacuum conditions after strict interfacial preparation, resulted in layer-by-layer reordering for alloys up to 65 at. % Ge. Coherently strained epilayers were reported for ion beam annealed GeSi alloys with germanium concentration less than 15 at. %. The pseudomorphic epilayers were characterized by planar and axial channeling to measure the tetragonal distortion in the strained overlayers. Strained films, produced by MeV Ar bombardment while heating the substrate at temperatures as low as 300C, were observed to relax following extended furnace anneals at temperatures of 800-900C. Such results offer the possibility of extending defect-free growth of metastable strained layers to other lattice mismatched systems

  1. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    International Nuclear Information System (INIS)

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds

  2. Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Wan-Jian [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Department of Physics & Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606 (United States); Yang, Ji-Hui; Zaunbrecher, Katherine; Gessert, Tim; Barnes, Teresa; Wei, Su-Huai, E-mail: Suhuai.Wei@nrel.gov [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Yan, Yanfa [Department of Physics & Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606 (United States)

    2015-10-05

    The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surface structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.

  3. Epitaxial growth of topological insulator Bi{sub 2}Se{sub 3} film on Si(111) with atomically sharp interface

    Energy Technology Data Exchange (ETDEWEB)

    Bansal, Namrata [Department of Electrical and Computer Engineering, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Kim, Yong Seung [Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of); Edrey, Eliav; Brahlek, Matthew; Horibe, Yoichi [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Iida, Keiko; Tanimura, Makoto [Research Department, Nissan Arc, Ltd. Yokosuka, Kanagawa 237-0061 (Japan); Li Guohong; Feng Tian; Lee, Hang-Dong; Gustafsson, Torgny; Andrei, Eva [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Oh, Seongshik, E-mail: ohsean@physics.rutgers.edu [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, NJ 08854 (United States)

    2011-10-31

    Atomically sharp epitaxial growth of Bi{sub 2}Se{sub 3} films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi{sub 2}Se{sub 3} films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi{sub 2}Se{sub 3} and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi{sub 2}Se{sub 3} is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi{sub 2}Se{sub 3} film down to the first quintuple layer without any second phase or an amorphous layer.

  4. Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures

    International Nuclear Information System (INIS)

    We present a growth method that overcomes the mismatch in rotational symmetry of ErAs and conventional III-V semiconductors, allowing for epitaxially integrated semimetal/semiconductor heterostructures. Transmission electron microscopy and reflection high-energy electron diffraction reveal defect-free overgrowth of ErAs layers, consisting of >2x the total amount of ErAs that can be embedded with conventional layer-by-layer growth methods. We utilize epitaxial ErAs nanoparticles, overgrown with GaAs, as a seed to grow full films of ErAs. Growth proceeds by diffusion of erbium atoms through the GaAs spacer, which remains registered to the underlying substrate, preventing planar defect formation during subsequent GaAs growth. This growth method is promising for metal/semiconductor heterostructures that serve as embedded Ohmic contacts to epitaxial layers and epitaxially integrated active plasmonic devices.

  5. Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits

    Science.gov (United States)

    Tournet, J.; Gosselink, D.; Miao, G.-X.; Jaikissoon, M.; Langenberg, D.; McConkey, T. G.; Mariantoni, M.; Wasilewski, Z. R.

    2016-06-01

    The quest for a universal quantum computer has renewed interest in the growth of superconducting materials on semiconductor substrates. High-quality superconducting thin films will make it possible to improve the coherence time of superconducting quantum bits (qubits), i.e., to extend the time a qubit can store the amplitude and phase of a quantum state. The electrical losses in superconducting qubits highly depend on the quality of the metal layers the qubits are made from. Here, we report on the epitaxy of single-crystal Al (011) layers on GaAs (001) substrates. Layers with 110 nm thickness were deposited by means of molecular beam epitaxy at low temperature and monitored by in situ reflection high-energy electron diffraction performed simultaneously at four azimuths. The single-crystal nature of the layers was confirmed by ex situ high-resolution x-ray diffraction. Differential interference contrast and atomic force microscopy analysis of the sample’s surface revealed a featureless surface with root mean square roughness of 0.55 nm. A detailed in situ study allowed us to gain insight into the nucleation mechanisms of Al layers on GaAs, highlighting the importance of GaAs surface reconstruction in determining the final Al layer crystallographic orientation and quality. A highly uniform and stable GaAs (001)-(2× 4) reconstruction reproducibly led to a pure Al (011) phase, while an arsenic-rich GaAs (001)-(4× 4) reconstruction yielded polycrystalline films with an Al (111) dominant orientation. The near-atomic smoothness and single-crystal character of Al films on GaAs, in combination with the ability to trench GaAs substrates, could set a new standard for the fabrication of superconducting qubits.

  6. Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal–organic chemical vapor deposition

    Science.gov (United States)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  7. Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  8. A computational study of kinetic phase diagrams for CoPt alloy films during epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Yang Zailin [Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience (Ministry of Education), Tsinghua University, Beijing 100084 (China); Shi Lin [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215125 (China); Ni Jun, E-mail: junni@mail.tsinghua.edu.c [Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience (Ministry of Education), Tsinghua University, Beijing 100084 (China)

    2010-06-30

    We have studied the kinetic processes of the epitaxial growth for CoPt alloy films using the master equation method. The kinetic phase diagrams of CoPt alloy films which show the phase formation conditions during the epitaxial growth are determined. From the kinetic phase diagrams, we find that the [001] ordered structure is much easy to be grown at high temperature while the [100] ordered structure is easy to be grown at low temperature although both the [001] and [100] ordering could be the equilibrium ground states. The atomic deposition, ordering and surface segregation lead to a rich variety of phases in epitaxial growth. The surface segregation is found to enhance the [001] ordering and leads to the formation of the [001] ordered phase at high temperature.

  9. Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Here, we report on the electrical characterization of phase change memory cells containing a Ge3Sb2Te6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles

  10. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Świątek, Z.; Ozga, P.; Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytsky, H. V.

    2016-07-01

    Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm-3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy.

  11. Abrupt PbTiO3/SrTiO3 superlattices grown by reactive molecular beam epitaxy

    International Nuclear Information System (INIS)

    PbTiO3/SrTiO3 superlattices were grown on (001) SrTiO3 substrates by reactive molecular beam epitaxy (MBE). Sharp superlattice reflections were observed by x-ray diffraction. High-resolution transmission electron microscopy of a [(PbTiO3)10/(SrTiO3)10]15 superlattice revealed that the PbTiO3/SrTiO3 interface structure is atomically sharp. The superlattice interfaces are fully coherent; no misfit dislocations or other crystal defects were observed in the superlattice by transmission electron microscopy. Selected area electron diffraction patterns indicated that the PbTiO3 layers are oriented with the c axis parallel to the growth direction. The dimensional control and interface abruptness achieved in this model system indicate that MBE is a viable method for constructing oxide multilayers on a scale where enhanced dielectric effects are expected. copyright 1999 American Institute of Physics

  12. Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Short-period AlGaN/GaN superlattices were established as versatile test structures to investigate the structural properties of molecular beam epitaxy (MBE)-grown GaN and AlGaN layers and their dependence on the GaN substrate quality. X-ray diffractometry data of the investigated superlattices allow access to relevant structural parameters such as aluminum mole fraction and layer thicknesses. The occurrence of theoretically predicted intense high-order satellite peaks and pronounced interface fringes in the diffraction pattern reflects abrupt interfaces and perfect 2-dimensional growth resulting in smooth surfaces. The data unambiguously demonstrate that the structural quality of the MBE grown layers is limited by the structural properties of the GaN substrate

  13. Epitaxial growth and microstructure of Cu2O nanoparticle/thin films on SrTiO3(100)

    International Nuclear Information System (INIS)

    Cuprous oxide (Cu2O) was grown on SrTiO3 (STO)(100) by oxygen plasma-assisted molecular-beam epitaxy. The microstructure of the grown layer and the Cu valence state were analysed using x-ray diffraction (XRD), x-ray photo-electron spectroscopy (XPS), atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (TEM) as well as electron diffraction. The grown layer was dominated by the Cu2O phase, possessing an epitaxial orientation of Cu2O(001) parallel STO(001) and Cu2O(100) parallel STO(100) with respect to the substrate. The morphology of the Cu2O film shows a dependence on the growth rate. Typically, fast growth will lead to the formation of a thin film with a relatively smooth surface. Slow growth will lead to the development of nanoparticles, featuring the formation of Cu2O pyramids. The pyramids are invariantly defined by the Cu2O{111} planes. Given the fact that the {111} planes correspond to the lowest surface energy of Cu2O, slow growth will give the system enough time to allow it to adopt the pyramid configuration by which the overall energy of the system is minimized

  14. Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Katase, Takayoshi [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)], E-mail: katase@lucid.msl.titech.ac.jp; Nomura, Kenji [ERATO-SORST, JST, in Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ohta, Hiromichi [ERATO-SORST, JST, in Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Graduate School of Engineering, Nagoya University, Furo, Chikusa-ku, Nagoya 464-8603 (Japan); Yanagi, Hiroshi [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); ERATO-SORST, JST, in Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hirano, Masahiro [ERATO-SORST, JST, in Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); ERATO-SORST, JST, in Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2009-04-15

    A homologous series compound ScAlO{sub 3}(MgO) (SCAM) has a superior lattice matching as small as {approx}1.4% in a-axis with GaN. This paper reports an efficient fabrication process of a single-crystalline SCAM buffer layer on a (1 1 1) yttria-stabilized zirconia (YSZ) substrate using pulsed laser deposition (PLD). A 10-nm thick ZnO epitaxial layer was used to induce solid-phase epitaxial growth of an amorphous (a-) SCAM layer formed at room temperature on (1 1 1) YSZ. It was found that the addition of excess Sc{sub 2}O{sub 3} and ZnO to a SCAM target used for PLD was needed to obtain single-crystalline SCAM films with atomically flat terraces-and-steps surfaces. The resulting single-crystalline SCAM films were examined as buffer layers to grow GaN by molecular beam epitaxy with a plasma nitrogen source. The GaN films were grown epitaxially on the SCAM/YSZ substrates with the epitaxial relationship of [0 0 0 1] GaN||[0 0 0 1] SCAM||[1 1 1] YSZ and [1 0 0] GaN||[11-20] SCAM||[1-10] YSZ. The SCAM buffer layers enhanced lateral growth of the GaN films owing to the good lattice matching.

  15. Molecular Beam Epitaxy-Grown InGaN Nanowires and Nanomushrooms for Solid State Lighting

    KAUST Repository

    Gasim, Anwar A.

    2012-05-01

    InGaN is a promising semiconductor for solid state lighting thanks to its bandgap which spans the entire visible regime of the electromagnetic spectrum. InGaN is grown heteroepitaxially due to the absence of a native substrate; however, this results in a strained film and a high dislocation density—two effects that have been associated with efficiency droop, which is the disastrous drop in efficiency of a light-emitting diode (LED) as the input current increases. Heteroepitaxially grown nanowires have recently attracted great interest due to their property of eliminating the detrimental effects of the lattice mismatch and the corollary efficiency droop. In this study, InGaN nanowires were grown on a low-cost Si (111) substrate via molecular beam epitaxy. Unique nanostructures, taking the form of mushrooms, have been observed in localized regions on the samples. These nanomushrooms consist of a nanowire body with a wide cap on top. Photoluminescence characterization revealed that the nanowires emit violet-blue, whilst the nanomushrooms emit a broad yellow-orange-red luminescence. The simultaneous emission from the nanowires and nanomushrooms forms white light. Structural characterization of a single nanomushroom via transmission electron microscopy revealed a simultaneous increase in indium and decrease in gallium at the interface between the body and the cap. Furthermore, the cap itself was found to be indium-rich, confirming it as the source of the longer wavelength yellow-orange-red luminescence. It is believed that the nanomushroom cap formed as a consequence of the saturation of growth on the c-plane of the nanowire. It is proposed that the formation of an indium droplet on the tip of the nanowire saturated growth on the c-plane, forcing the indium and gallium adatoms to incorporate on the sidewall m-planes instead, but only at the nanowire tip. This resulted in the formation of a mushroom-like cap on the tip. How and why the indium droplets formed is not

  16. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples

  17. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, F. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Fischer, I. A.; Schulze, J. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Benedetti, A. [CACTI, Univ. de Vigo, Campus Universitario Lagoas Marcosende 15, Vigo (Spain); Zaumseil, P. [IHP GmbH, Innovations for High Performance Microelectronics, Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Cerqueira, M. F.; Vasilevskiy, M. I. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Stefanov, S.; Chiussi, S. [Dpto. Fisica Aplicada, Univ. de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

    2015-12-28

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  18. Epitaxial Growth of Graphene on 6H-SiC (0001) by Thermal Annealing

    Institute of Scientific and Technical Information of China (English)

    TANG Jun; LIU Zhong-Liang; KANG Chao-Yang; PAN Hai-Bin; WEI Shi-Qiang; XU Peng-Shou; GAO Yu-Qiang; XU Xian-Gang

    2009-01-01

    An epitaxial graphene (EG) layer is successfully grown on a Si-terminated 6H-SiC (0001) substrate by the method of thermal annealing in an ultrahigh vacuum molecular beam epitaxy chamber.The structure and morphology of the EG sample are characterized by reflection high energy diffraction (RHEED),Raman spectroscopy and atomic force microscopy (AFM).Graphene diffraction streaks can be seen in RHEED.The G and 2D peaks of graphene are clearly observed in the Raman spectrum.The AFM results show that the graphene nominal thickness is about 4-10 layers.

  19. Kinetic model of SiGe selective epitaxial growth using RPCVD technique

    OpenAIRE

    Kolahdouz, M.; Maresca, L; Ghandi, R; Khatibi, Ali; Radamson, H.

    2010-01-01

    Recently, selective epitaxial growth (SEG) of B-doped SiGe layershas been used in recessed source/drain (S/D) of pMOSFETs. Theuniaxial induced strain enhances the carrier mobility in the channel.In this work, a detailed model for SEG of SiGe has been developed topredict the growth rate and Ge content of layers indichlorosilane(DCS)-based epitaxy using a reduced-pressure CVDreactor. The model considers each gas precursor contributions fromthe gas-phase and the surface.The gas flow and temperat...

  20. Direct observation of epitaxial organic film growth: temperature-dependent growth mechanisms and metastability.

    Science.gov (United States)

    Marchetto, Helder; Schmidt, Thomas; Groh, Ullrich; Maier, Florian C; Lévesque, Pierre L; Fink, Rainer H; Freund, Hans-Joachim; Umbach, Eberhard

    2015-11-21

    The growth of the first ten layers of organic thin films on a smooth metallic substrate has been investigated in real-time using the model system PTCDA on Ag(111). The complex behaviour is comprehensively studied by electron microscopy, spectroscopy and diffraction in a combined PEEM/LEEM instrument revealing several new phenomena and yielding a consistent picture of this layer growth. PTCDA grows above room temperature in a Stranski-Krastanov mode, forming three-dimensional islands on a stable bi-layer, in competition with metastable 3rd and 4th layers. Around room temperature this growth mode changes into a quasi layer-by-layer growth, while at temperatures below about 250 K a Vollmer-Weber-like behaviour is observed. By means of laterally resolved soft X-ray absorption spectroscopy the orientation of all adsorbed molecules is found to be homogeneously flat lying on the surface, even during the growth process. The films grow epitaxially, showing long-range order with rotational domains. For the monolayer these domains could be directly analysed, showing an average size of several micrometers extending over substrate steps. PMID:26462749

  1. Direct formation of thin films and epitaxial overlayers at low temperatures using a low-energy (10-500 eV) ion beam deposition system

    International Nuclear Information System (INIS)

    A low-energy ion beam deposition system has been developed at Oak Ridge National Laboratory and has been applied successfully to the growth of epitaxial films at low temperatures for a number of different elements. The deposition system utilizes the ion source and optics of a commercial ion implantation accelerator. The 35 keV mass- and energy-analyzed ion beam from the accelerator is decelerated in a four-element electrostatic lens assembly to energies between 10 and 500 eV for direct deposition onto a target under UHV conditions. Current densities on the order of 10 μA/cm2 are achieved with good uniformity over a 1.4 cm diameter spot. The completed films are characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning have been studied. Epitaxial overlayers which show good minimum yields by ion channeling (3 to 4%) have been produced at temperatures as low as 3750C for Si on Si(100) and 2500C for Ge on Ge(100) at growth rates that exceed the solid-phase epitaxy rates at these temperatures by more than an order of magnitude

  2. Epitaxial growth of iridate pyrochlore Nd2Ir2O7 films

    Science.gov (United States)

    Gallagher, J. C.; Esser, B. D.; Morrow, R.; Dunsiger, S. R.; Williams, R. E. A.; Woodward, P. M.; McComb, D. W.; Yang, F. Y.

    2016-01-01

    Epitaxial films of the pyrochlore Nd2Ir2O7 have been grown on (111)-oriented yttria-stabilized zirconia (YSZ) substrates by off-axis sputtering followed by post-growth annealing. X-ray diffraction (XRD) results demonstrate phase-pure epitaxial growth of the pyrochlore films on YSZ. Scanning transmission electron microscopy (STEM) investigation of an Nd2Ir2O7 film with a short post-annealing provides insight into the mechanism for crystallization of Nd2Ir2O7 during the post-annealing process. STEM images reveal clear pyrochlore ordering of Nd and Ir in the films. The epitaxial relationship between the YSZ and Nd2Ir2O7 is observed clearly while some interfacial regions show a thin region with polycrystalline Ir nanocrystals. PMID:26923862

  3. Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Wu, J.; Božović, I. [Brookhaven National Laboratory, Upton, New York 11973-5000 (United States)

    2015-06-01

    Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

  4. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

    OpenAIRE

    Werner, Robert; Petrov, Alexandr Yu.; Mino, Lucero Alvarez; Kleiner, Reinhold; Koelle, Dieter; Davidson, Bruce A.

    2011-01-01

    We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360^/circ, the TMR shows 4-fold symmetry, i.e. biaxial anisotropy, aligned with the crystalline axes but not the junction geometrical long axis. The TMR reaches ~ 1900% at 4K, correspond...

  5. Luminescence characterization of CdTe:In grown by molecular beam epitaxy

    Science.gov (United States)

    Bassani, F.; Tatarenko, S.; Saminadayar, K.; Bleuse, J.; Magnea, N.; Pautrat, J. L.

    1991-06-01

    We report on the incorporation of indium as a shallow donor in CdTe by molecular beam epitaxy. Using proper surface stoichiometry conditions, we demonstrate that it is possible to incorporate and activate up to 1018 cm-3 indium impurities. The doped layers have been characterized by secondary-ion mass spectroscopy, capacitance-voltage and Hall-effect measurements. Photoluminescence (PL) and resonant excitation of the PL clearly identify indium as the chemical dopant, acting as an effective mass donor with an energy of 14 meV. Incorrect stoichiometry conditions lead to a poor dopant activity and to complex centers formation.

  6. Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    Directory of Open Access Journals (Sweden)

    J. Wu

    2015-06-01

    Full Text Available Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

  7. Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

    OpenAIRE

    Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N; Rajpalke, Mohana K; Krupanidhi, SB

    2012-01-01

    The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenk...

  8. Ferromagnetism in Ge1-xCrxTe epilayers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    IV-VI ferromagnetic semiconductor Ge1-xCrxTe has been grown on BaF2 (111) by molecular beam epitaxy. The ferromagnetism was clearly established by direct magnetization and Hall measurements. The experimental correlation between the anomalous Hall resistivity ρxy and the resistivity ρxx, ρxy∝ρxx1.76, is understood from the semiclassical nature of the charge carrier dynamics, suggesting that the ferromagnetism gives rise to p-d exchange interaction. The Curie temperature increases systematically from the substrate temperature TS of 300 to 250 to 200 deg. C and with increasing the Cr composition along with each TS

  9. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

    International Nuclear Information System (INIS)

    Our ab initio theory calculations predict a semiconducting band structure of I-Mn-V compounds. We demonstrate on LiMnAs that high-quality materials with group-I alkali metals in the crystal structure can be grown by molecular beam epitaxy. Optical measurements on the LiMnAs epilayers are consistent with the theoretical electronic structure. Our calculations also reproduce earlier reports of high antiferromagnetic ordering temperature and predict large, spin-orbit-coupling-induced magnetic anisotropy effects. We propose a strategy for employing antiferromagnetic semiconductors in high-temperature semiconductor spintronics.

  10. Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Novák, Vít; Martí, X.; Cukr, Miroslav; Máca, František; Shick, Alexander; Mašek, Jan; Horodyská, P.; Němec, P.; Holý, V.; Zemek, Josef; Kužel, Petr; Němec, I.; Gallagher, B. L.; Campion, R. P.; Foxon, C. T.; Wunderlich, Joerg

    2011-01-01

    Roč. 83, č. 3 (2011), "035321-1"-"035321-6". ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA MŠk(CZ) 7E08087 Grant ostatní: EU FP7- SemiSpinNet(XE) 215368; Seventh Framework Programme - NAMASTE(XE) 214499; ERC(XE) 268066 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : antiferromagnetic semiconductors * spintronics * molecular beam epitaxy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011

  11. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    OpenAIRE

    Federico Baiutti; Georg Christiani; Gennady Logvenov

    2014-01-01

    In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2−xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities...

  12. Deep electron traps in CdTe:In films grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zakrzewski, A.K.; Dobaczewski, L.; Karczewski, G.; Wojtowicz, T.; Kossut, J. [Institute of Physics, Polish Academy of Science, Warsaw (Poland)

    1995-12-31

    N-type indium CdTe grown on n{sup +}-GaAs molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band. (author). 5 refs, 1 fig.

  13. In situ photoelectron spectroscopy of molecular-beam-epitaxy grown surfaces

    CERN Document Server

    Oshima, M; Okabayashi, J; Ono, K

    2003-01-01

    Two in situ high-resolution synchrotron radiation photoelectron spectroscopy (SRPES) systems combined with a molecular beam epitaxy (MBE) chamber for III-V compound semiconductors and a laser MBE chamber for strongly correlated oxide films, respectively, have been designed and fabricated to analyze intrinsic and surface/interface electronic structures of these unique materials. The importance of the in situ SRPES has been demonstrated by the results of 1) Si surface nanostructures, 2) GaAs surfaces/interfaces and nanostructures, 3) MnAs magnetic nanostructures, and 4) strongly-correlated La sub 1 sub - sub x Sr sub x MnO sub 3 surfaces/interfaces and superstructures.

  14. Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition

  15. Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

    International Nuclear Information System (INIS)

    Scandium nitride (ScN) is a group IIIB transition metal nitride semiconductor with numerous potential applications in electronic and optoelectronic devices due to close lattice matching with gallium nitride (GaN). However, prior investigations of ScN have focused primarily on heteroepitaxial growth on substrates with a high lattice mismatch of 7%–20%. In this study, the authors have investigated ammonia (NH3) gas source molecular beam epitaxy (NH3-GSMBE) of ScN on more closely lattice matched silicon carbide (SiC) and GaN surfaces (3-GSMBE conditions of 10−5–10−4 Torr NH3 and 800–1050 °C where selected for initial investigation. In-situ x-ray photoelectron spectroscopy (XPS) and ex-situ Rutherford backscattering measurements showed all ScN films grown using these conditions were stoichiometric. For ScN growth on 3C-SiC (111)-(√3 × √3)R30° carbon rich surfaces, the observed attenuation of the XPS Si 2p and C 1s substrate core levels with increasing ScN thickness indicated growth initiated in a layer-by-layer fashion. This was consistent with scanning electron microscopy (SEM) images of 100–200 nm thick films that revealed featureless surfaces. In contrast, ScN films grown on 3C-SiC (111)-(3 × 3) and 3C-SiC (100)-(3 × 2) silicon rich surfaces were found to exhibit extremely rough surfaces in SEM. ScN films grown on both 3C-SiC (111)-(√3 × √3)R30° and 2H-GaN (0001)-(1 × 1) epilayer surfaces exhibited hexagonal (1 × 1) low energy electron diffraction patterns indicative of (111) oriented ScN. X-ray diffraction ω-2θ rocking curve scans for these same films showed a large full width half maximum of 0.29° (1047 arc sec) consistent with transmission electron microscopy images that revealed the films to be poly-crystalline with columnar grains oriented at ≈15° to the [0001] direction of the 6H-SiC (0001) substrate. In-situ reflection electron energy loss spectroscopy measurements determined the band-gap for

  16. Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

    Energy Technology Data Exchange (ETDEWEB)

    King, Sean W., E-mail: sean.king@intel.com; Davis, Robert F. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nemanich, Robert J. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-11-01

    Scandium nitride (ScN) is a group IIIB transition metal nitride semiconductor with numerous potential applications in electronic and optoelectronic devices due to close lattice matching with gallium nitride (GaN). However, prior investigations of ScN have focused primarily on heteroepitaxial growth on substrates with a high lattice mismatch of 7%–20%. In this study, the authors have investigated ammonia (NH{sub 3}) gas source molecular beam epitaxy (NH{sub 3}-GSMBE) of ScN on more closely lattice matched silicon carbide (SiC) and GaN surfaces (<3% mismatch). Based on a thermodynamic analysis of the ScN phase stability window, NH{sub 3}-GSMBE conditions of 10{sup −5}–10{sup −4} Torr NH{sub 3} and 800–1050 °C where selected for initial investigation. In-situ x-ray photoelectron spectroscopy (XPS) and ex-situ Rutherford backscattering measurements showed all ScN films grown using these conditions were stoichiometric. For ScN growth on 3C-SiC (111)-(√3 × √3)R30° carbon rich surfaces, the observed attenuation of the XPS Si 2p and C 1s substrate core levels with increasing ScN thickness indicated growth initiated in a layer-by-layer fashion. This was consistent with scanning electron microscopy (SEM) images of 100–200 nm thick films that revealed featureless surfaces. In contrast, ScN films grown on 3C-SiC (111)-(3 × 3) and 3C-SiC (100)-(3 × 2) silicon rich surfaces were found to exhibit extremely rough surfaces in SEM. ScN films grown on both 3C-SiC (111)-(√3 × √3)R30° and 2H-GaN (0001)-(1 × 1) epilayer surfaces exhibited hexagonal (1 × 1) low energy electron diffraction patterns indicative of (111) oriented ScN. X-ray diffraction ω-2θ rocking curve scans for these same films showed a large full width half maximum of 0.29° (1047 arc sec) consistent with transmission electron microscopy images that revealed the films to be poly-crystalline with columnar grains oriented at ≈15° to the [0001] direction of the

  17. Growing high-quality ternary CdMnTe epilayers by molecular beam epitaxy on Si substrates and its mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jyh-Shyang, E-mail: jswang@cycu.edu.tw [Department of Physics, Chung Yuan Christian University, Taoyuan City 32023, Taiwan (China); Center for Nano-Technology, Chung Yuan Christian University, Taoyuan City 32023, Taiwan (China); Tong, Shih-Chang; Tsai, Yu-Hsuan; Tsai, Wei-jiun [Department of Physics, Chung Yuan Christian University, Taoyuan City 32023, Taiwan (China); Yang, Chu-Shou; Chang, Yi-Hsin [Graduate Institute of Electro-Optical Engineering, Tatung University, Taipei 10452, Taiwan (China); Cheng, Yung-Chen [Department of Materials Science, National University of Tainan, Tainan 70005, Taiwan (China); Wu, Chih-Hung [Institute of Nuclear Energy Research, Longtan 32546, Taiwan (China); Yuan, Chi-Tsu; Shen, Ji-Lin [Department of Physics, Chung Yuan Christian University, Taoyuan City 32023, Taiwan (China); Center for Nano-Technology, Chung Yuan Christian University, Taoyuan City 32023, Taiwan (China)

    2015-10-15

    Cd(Mn,Zn)Te-based ternary compound semiconductors with wide band-gaps are important in the detection of radiation and photovoltaic applications. This study characterizes Cd{sub 1-x}Mn{sub x}Te epilayers on Si substrates with various Mn compositions grown by molecular beam epitaxy. The surface smoothness, crystallinity and optical quality all are significantly improved with increasing Mn content. The Cd{sub 0.61}Mn{sub 0.39}Te epilayer with a thickness of only about 500 nm yields a full width at half maximum of the X-ray rocking curve of 165 arcsec. Photoluminescence spectra at 10 K show that the intensity of defect-related emissions is much lower than that of binary CdTe epilayers, reaching zero from the samples with high Mn content, while the integral intensity of the exciton-related emissions is increased by more than two orders of magnitude. Raman scattering spectra reveal that the intensity of the Te–Te related defect vibration modes falls significantly as the Mn content increase, even disappearing altogether in the samples with high Mn content. This work proposes that incorporating Mn atoms during epitaxial growth can promote the decomposition of Te{sub 2} sources, owing to the high sticking coefficient of Mn and the high cohesive energy of the Mn–Te bond, and then reduce the number of Te–Te related stacking fault defects, yielding high-quality CdMnTe epilayers. Our results herein demonstrate that the CdMnTe ternary epilayers are much more promising in terms of material quality than the CdZnTe ternary epilayers. - Highlights: • High-quality ternary CdMnTe were grown on Si substrates by molecular beam epitaxy. • The material qualities were significantly improved with increasing Mn content. • The Te–Te related defects were greatly reduced with increasing Mn content. • We report an enhanced growth of CdTe-based epilayers by the incorporation of Mn atoms.

  18. MBE (Molecular Beam Epitaxial) growth characterization and electronic device processing of HgCdTe, HgZnTe related heterojunctions and HgCdTe-CdTe superlattices

    Science.gov (United States)

    Faurie, Jean-Pierre

    1987-06-01

    As the MBE growth technique has continued to improve for Hg(1-x)Cd(x)Te films, the prospects for films of larger area have begun to be explored. These larger area films are important for imaging arrays and will be especially vital in the future for the efficient production of Hg(1-x)Cd(x)Te material. The growth of MBE of uniform Hg(1-x)Cd(x)Te epilayer on a large substrate is very difficult to achieve because of the non-uniform distribution of the fluxes and on the non-uniform temperature of the substrate.

  19. Growth of crack-free thick films of rare-earth-barium-oxocuprate superconductors by liquid phase epitaxy

    International Nuclear Information System (INIS)

    The following topics were dealt with: crystal growth of YBa2Cu3O7-x cuprates, epitaxial growth from melt solutions, Crack propagation in thick films, materials parameters, solid state physical properties of the layers

  20. Effect of thickness on the microstructure of GaN films on Al203 (0001) by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Liu Ying-Ying; Zhu Jun; Luo Wen-Bo; Hao Lan-Zhong; Zhang Ying; Li Yan-Rong

    2011-01-01

    Heteroepitaxia1l GaN films are grown on sapphire (0001) substrates using laser molecular beam epitaxy.The growth processes are in-situ monitored by reflection high energy electron diffraction.It is revealed that the growth mode of GaN transformed from three-dimensional (3D) island mode to two-dimensional (2D) layer-by-layer mode with the increase of thickness.This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns.Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm.The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode.The 110-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes.The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.

  1. Formation of Cr-germanide nanoparticles during growth of epitaxial Ge-Cr thin films

    Energy Technology Data Exchange (ETDEWEB)

    Goswami, R.; Kioseoglou, G.; Hanbicki, A.T.; Jonker, B.T.; Spanos, G

    2004-05-03

    Microstructural evolution has been investigated as a function of substrate temperature in Ge-4 at.%Cr films grown by molecular beam epitaxy (MBE), by employing transmission electron microscopy (TEM); the TEM results have been correlated to the magnetic properties. Magnetometry measurements show that samples grown at substrate temperatures of 200 deg. C and above are paramagnetic. Significantly different microstructures have been shown to evolve, depending on the substrate temperature (T{sub s}) during MBE growth. For T{sub s}=200 deg. C, the film consists of elongated rods, or 'noodles' of the equilibrium Cr{sub 11}Ge{sub 19} phase. For T{sub s}=400 deg. C, a nanodispersion of metastable Cr{sub 11}Ge{sub 8} equiaxed precipitates form within the Ge-matrix. It is thus proposed that for T{sub s}=400 deg. C a supersaturated Ge-Cr solid-solution is initially formed from the vapor phase, followed by solid-state precipitation. At T{sub s}=200 deg. C, precipitation analogous to a cellular/discontinuous transformation results in the formation of cooperatively grown rod-like or noodle shaped microstructures.

  2. Formation of Cr-germanide nanoparticles during growth of epitaxial Ge-Cr thin films

    International Nuclear Information System (INIS)

    Microstructural evolution has been investigated as a function of substrate temperature in Ge-4 at.%Cr films grown by molecular beam epitaxy (MBE), by employing transmission electron microscopy (TEM); the TEM results have been correlated to the magnetic properties. Magnetometry measurements show that samples grown at substrate temperatures of 200 deg. C and above are paramagnetic. Significantly different microstructures have been shown to evolve, depending on the substrate temperature (Ts) during MBE growth. For Ts=200 deg. C, the film consists of elongated rods, or 'noodles' of the equilibrium Cr11Ge19 phase. For Ts=400 deg. C, a nanodispersion of metastable Cr11Ge8 equiaxed precipitates form within the Ge-matrix. It is thus proposed that for Ts=400 deg. C a supersaturated Ge-Cr solid-solution is initially formed from the vapor phase, followed by solid-state precipitation. At Ts=200 deg. C, precipitation analogous to a cellular/discontinuous transformation results in the formation of cooperatively grown rod-like or noodle shaped microstructures

  3. Epitaxial Growth of a Methoxy-Functionalized Quaterphenylene on Alkali Halide Surfaces

    DEFF Research Database (Denmark)

    Balzer, Frank; Sun, Rong; Parisi, Jürgen;

    2015-01-01

    The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of lowenergy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X...

  4. Effect of Fe coating of nucleation sites on epitaxial growth of Fe oxide nanocrystals on Si substrates

    Science.gov (United States)

    Ishibe, Takafumi; Watanabe, Kentaro; Nakamura, Yoshiaki

    2016-08-01

    We studied the effect of Fe coating on the epitaxial growth of Fe3O4 nanocrystals (NCs) over Fe-coated Ge epitaxial nuclei on Si(111). To completely cover Ge nuclei with Fe, some amount of Fe (>8 monolayers) must be deposited. Such covering is a key to epitaxial growth because an Fe coating layer prevents the oxidation of Ge surfaces during Fe3O4 formation, resulting in the epitaxial growth of Fe3O4 on them. This study demonstrates that an appropriate Fe coating of nucleation sites leads to the epitaxial growth of Fe3O4 NCs on Si substrates, indicating the realization of environmentally friendly and low-cost Fe3O4 NCs as the resistance random access memory material.

  5. Epitaxial layer-by-layer growth of Yb:YAG and YbAG PLD-films

    Energy Technology Data Exchange (ETDEWEB)

    Guen, Teoman; Kuzminykh, Yury; Tellkamp, Friedjof; Petermann, Klaus; Huber, Guenter [University of Hamburg, Institute of Laser-Physics, Hamburg (Germany)

    2008-11-15

    In this contribution, we report on the 2-dimensional (2D) layer-by-layer growth of Yb(10%):Y{sub 3}Al{sub 5}O{sub 12} (YAG) and Yb{sub 3}Al{sub 5}O{sub 12} (YbAG) PLD-films on {l_brace}100{r_brace}-oriented YAG. The epitaxial growth was observed in situ by Reflection High Energy Electron Diffraction (RHEED) as intensity oscillations of the specularly reflected electron beam. The properties of the films were investigated ex situ by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and optical spectroscopy. The optical emission spectra of the films are similar to those of the corresponding crystalline bulk materials. (orig.)

  6. Epitaxial growth and transport properties of Sr$_2$CrWO$_6$ thin films

    OpenAIRE

    Philipp, J. B.; Reisinger, D.; Schonecke, M.; Opel, M.; Marx, A.; Erb, A.; Alff, L.; Gross, R.

    2002-01-01

    We report on the preparation and characterization of epitaxial thin films of the double-perovskite Sr$_2$CrWO$_6$ by Pulsed Laser Deposition (PLD). On substrates with low lattice mismatch like SrTiO$_3$, epitaxial Sr$_2$CrWO$_6$ films with high crystalline quality can be grown in a molecular layer-by-layer growth mode. Due to the similar ionic radii of Cr and W, these elements show no sublattice order. Nevertheless, the measured Curie temperature is well above 400 K. Due to the reducing growt...

  7. Residual stress in AlN films grown on sapphire substrates by molecular beam epitaxy

    Science.gov (United States)

    Rong, Xin; Wang, Xinqiang; Chen, Guang; Pan, Jianhai; Wang, Ping; Liu, Huapeng; Xu, Fujun; Tan, Pingheng; Shen, Bo

    2016-05-01

    Residual stress in AlN films grown by molecular beam epitaxy (MBE) has been studied by Raman scattering spectroscopy. A strain-free Raman frequency and a biaxial stress coefficient for E2(high) mode are experimentally determined to be 657.8 ± 0.3 cm-1 and 2.4 ± 0.2 cm-1 / GPa, respectively. By using these parameters, the residual stress of a series of AlN layers grown under different buffer layer conditions has been investigated. The residual compressive stress is found to be obviously decreased by increasing the Al/N beam flux ratio of the buffer layer, indicating the generation of tensile stress due to stronger coalescence of AlN grains, as also confirmed by the in-situ reflection high energy electron diffraction (RHEED) monitoring observation. The stronger coalescence does lead to improved quality of AlN films as expected.

  8. Epitaxial growth of Ge-Sb-Te based phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Perumal, Karthick

    2013-07-30

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  9. Epitaxial growth of Ge-Sb-Te based phase change materials

    International Nuclear Information System (INIS)

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb2Te3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb2Te3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  10. Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy

    International Nuclear Information System (INIS)

    The results of vertical transport through nitride heterobarrier structures grown by ammonia molecular beam epitaxy are presented. Structures are designed with binary layers to avoid the effects of random alloy fluctuations in ternary nitride barriers. The unintentional incorporation of Ga in the AlN growth is investigated by atom probe tomography and is shown to be strongly dependent on both the NH3 flowrate and substrate temperature growth parameters. Once nominally pure AlN layer growth conditions are achieved, structures consisting of unintentionally doped (UID) GaN spacer layers adjacent to a nominally pure AlN are grown between two layers of n+ GaN, from which isotype diodes are fabricated. Varying the design parameters of AlN layer thickness, UID spacer layer thickness, and threading dislocation density show marked effects on the vertical transport characteristics of these structures. The lack of significant temperature dependence, coupled with Fowler-Nordheim and/or Milliken-Lauritsen analysis, point to a prevalently tunneling field emission mechanism through the AlN barrier. Once flatband conditions in the UID layer are achieved, electrons leave the barrier with significant energy. This transport mechanism is of great interest for applications in hot electron structures

  11. Epitaxial growth of fcc-CoxNi100-x thin films on MgO(110) single-crystal substrates

    International Nuclear Information System (INIS)

    CoxNi100-x (x=100, 80, 20, 0 at. %) epitaxial thin films were prepared on MgO(110) single-crystal substrates heated at 300 deg. C by ultrahigh vacuum molecular beam epitaxy. The growth mechanism is discussed based on lattice strain and crystallographic defects. CoNi(110) single-crystal films with a fcc structure are obtained for all compositions. CoxNi100-x film growth follows the Volmer-Weber mode. X-ray diffraction analysis indicates that the out-of-plane and the in-plane lattice spacings of the CoxNi100-x films are in agreement within ±0.5% with the values of the respective bulk CoxNi100-x crystals, suggesting that the strain in the film is very small. High-resolution cross-sectional transmission microscopy shows that an atomically sharp boundary is formed between a Co(110)fcc film and a MgO(110) substrate, where periodical misfit dislocations are preferentially introduced in the film at the Co/MgO interface. The presence of such periodical misfit dislocations relieves the strain caused by the lattice mismatch between the film and the substrate.

  12. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin; Ng, G. I. [NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Dharmarasu, N.; Agrawal, M.; Arulkumaran, S.; Vicknesh, S. [Temasek Laboratories@NTU, Nanyang Technological University, Singapore 637553 (Singapore)

    2015-01-14

    To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a room temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.

  13. Silicon thin film growth by low temperature liquid phase epitaxy for photovoltaic applications

    International Nuclear Information System (INIS)

    In this thesis is presented an economic, clean and innovating way to carry out silicon substrate in thin layer for photovoltaic applications. It is based on layer growth by low temperature liquid phase epitaxy on silicon substrates embrittled by ion implantation. The aim of this work is to find experimental conditions to decrease the epitaxy temperature (≤800 C instead of 1050 C) while conserving a relatively high growth velocity. An innovating method has been implemented; it consists to use two different baths: the first one Al-Sn-Si allows to de-oxidize the silicon substrate surface without using hydrogen and the second one containing Sn-Si allows the growth of a thick layer of silicon. Uniform layers of a thickness of 15μm have been obtained after three hours of growth. Thermodynamic studies exploiting the phase diagrams of ternary or quaternary mixtures have been carried out to reach high growth velocity. Tin and copper based alloys have been chosen, tin for lowering the temperature and copper for increasing the silicon solubility. Layers of 30 μm have been obtained after two hours of growth. It has been shown too that this epitaxy step could be compatible with the technology of ion implantation embrittlement. (O.M.)

  14. Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    We present a Maxwell-Boltzmann electron energy distribution based model for the incorporation rate of nitrogen into GaInNAs grown by molecular beam epitaxy (MBE) using a radio frequency plasma source. Nitrogen concentration is predicted as a function of radio-frequency system primary resistance, N flow, and RF power, and group III growth rate. The semi-empirical model is shown to be repeatable with a maximum error of 6%. The model was validated for two different MBE systems by growing GaInNAs on GaAs(100) with variable nitrogen composition of 0%–6%

  15. Materials and tunneling characteristics of HTSC Y1Ba2Cu3O7-x thin films by molecular beam epitaxy

    International Nuclear Information System (INIS)

    The capability of developing an efficient activated oxygen source in conjunction with molecular beam epitaxy has led to successful thin film synthesis of Y1Ba2Cu3O7-x high temperature superconductors. The smooth morphology and well ordered surface structures of these in-situ grown films allow to conduct superconducting tunneling experiments directly in a planar junction mode. The authors review in this paper in-situ film growth, materials and superconducting properties, and quasi particle tunneling characteristics of Y1Ba2Cu3O7-x/native barrier/Pb junctions

  16. Analysis of Mg content of Zn1-xMgxO film grown on sapphire substrates by plasma-assisted molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    YAN Fengping; JIAN Shuisheng; K. Ogata; K. Koike; S. Sasa; M. Inoue; M. Yano

    2004-01-01

    The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP)and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments.

  17. Room temperature weak ferromagnetism in Sn1−xMnxSe2 2D films grown by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Sining Dong

    2016-03-01

    Full Text Available We discuss growth and magnetic properties of high-quality two dimensional (2D Sn1−xMnxSe2 films. Thin films of this 2D ternary alloy with a wide range of Mn concentrations were successfully grown by molecular beam epitaxy. Mn concentrations up to x ≈ 0.60 were achieved without destroying the crystal structure of the parent SnSe2 2D system. Most important, the specimens show clear weak ferromagnetic behavior above room temperature, which should be of interest for 2D spintronic applications.

  18. Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy

    Science.gov (United States)

    Lee, Gang Seok; Lee, Chanmi; Jeon, Hunsoo; Lee, Chanbin; Bae, Sung Geun; Ahn, Hyung Soo; Yang, Min; Yi, Sam Nyung; Yu, Young Moon; Lee, Jae Hak; Honda, Yoshio; Sawaki, Nobuhiko; Kim, Suck-Whan

    2016-05-01

    Even though a patterned sapphire substrate (PSS) has been used for the growth of a high-quality epilayer because of its many advantages, it has not been successfully used to grow an AlN epilayer for ultraviolet (UV) light-emitting diodes (LEDs) on a PSS up to now. We report the growth of a high-quality AlN epilayer on a PSS, as a substrate for the manufacture of UV LEDs, by hydride vapor phase epitaxy (HVPE). The X-ray diffraction (XRD) peaks for the AlN epilayer grown on the PSS indicate that crystalline AlN with a wurtzite structure was grown successfully on the PSS. Furthermore, HVPE combining both in situ HVPE technology and liquid-phase epitaxy (LPE) using a mixed source is proposed as a novel method for the growth of a flat AlN epilayer on a PSS.

  19. Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

    Science.gov (United States)

    Steele, J. A.; Lewis, R. A.; Horvat, J.; Nancarrow, M. J. B.; Henini, M.; Fan, D.; Mazur, Y. I.; Schmidbauer, M.; Ware, M. E.; Yu, S.-Q.; Salamo, G. J.

    2016-01-01

    Herein we investigate a (001)-oriented GaAs1−xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapour-liquid-solid mechanism. Specifically, self-aligned “nanotracks” are found to exist trailing the Bi droplets on the sample surface. Through cross-sectional high-resolution transmission electron microscopy the nanotracks are revealed to in fact be elevated above surface by the formation of a subsurface planar nanowire, a structure initiated mid-way through the molecular-beam-epitaxy growth and embedded into the epilayer, via epitaxial overgrowth. Electron microscopy studies also yield the morphological, structural, and chemical properties of the nanostructures. Through a combination of Bi determination methods the compositional profile of the film is shown to be graded and inhomogeneous. Furthermore, the coherent and pure zincblende phase property of the film is detailed. Optical characterisation of features on the sample surface is carried out using polarised micro-Raman and micro-photoluminescence spectroscopies. The important light producing properties of the surface nanostructures are investigated through pump intensity-dependent micro-PL measurements, whereby relatively large local inhomogeneities are revealed to exist on the epitaxial surface for important optical parameters. We conclude that such surface effects must be considered when designing and fabricating optical devices based on GaAsBi alloys. PMID:27377213

  20. Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

    Science.gov (United States)

    Steele, J. A.; Lewis, R. A.; Horvat, J.; Nancarrow, M. J. B.; Henini, M.; Fan, D.; Mazur, Y. I.; Schmidbauer, M.; Ware, M. E.; Yu, S.-Q.; Salamo, G. J.

    2016-07-01

    Herein we investigate a (001)-oriented GaAs1‑xBix/GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapour-liquid-solid mechanism. Specifically, self-aligned “nanotracks” are found to exist trailing the Bi droplets on the sample surface. Through cross-sectional high-resolution transmission electron microscopy the nanotracks are revealed to in fact be elevated above surface by the formation of a subsurface planar nanowire, a structure initiated mid-way through the molecular-beam-epitaxy growth and embedded into the epilayer, via epitaxial overgrowth. Electron microscopy studies also yield the morphological, structural, and chemical properties of the nanostructures. Through a combination of Bi determination methods the compositional profile of the film is shown to be graded and inhomogeneous. Furthermore, the coherent and pure zincblende phase property of the film is detailed. Optical characterisation of features on the sample surface is carried out using polarised micro-Raman and micro-photoluminescence spectroscopies. The important light producing properties of the surface nanostructures are investigated through pump intensity-dependent micro-PL measurements, whereby relatively large local inhomogeneities are revealed to exist on the epitaxial surface for important optical parameters. We conclude that such surface effects must be considered when designing and fabricating optical devices based on GaAsBi alloys.

  1. Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure

    International Nuclear Information System (INIS)

    The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different Sb beam equivalent pressure (BEP) levels and two different termination temperatures. Surface morphologies of epilayers were examined by wet etching, surface profiler, atomic force microscopy, scanning electron microscopy and Raman spectroscopy. The results demonstrate that during the cooling period, a Sb BEP of 4.00 × 10−4 Pa at a termination temperature of 400 °C induces a smooth surface without Sb condensation whereas same Sb BEP at a termination temperature of 350 °C forms a 300 nm thick Sb layer on the surface. In addition, it is revealed that by applying a wet etching procedure and using a surface profiler it is possible to identify this condensed layer from the two-sloped feature of mesa profile. - Highlights: • Sb beam flux termination temperature is crucial for redundant Sb condensation. • Sb beam flux level has a role on the thickness of redundant condensed Sb layer. • Redundant Sb layer thickness can be measured by two-sloped mesa structure

  2. Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays

    International Nuclear Information System (INIS)

    We investigated the growth of the epitaxial Ge layers in a 40 nm wide SiO2 trench array on Si by ultra-high vacuum chemical vapor deposition. If the thickness of Ge was less than the height of the SiO2 trenches, the Ge layers grew epitaxially by a selective epitaxial growth process without any detectable surface modification, which is due to the high interfacial energy between the SiO2 mask and Ge. We calculated the critical strain required to modify the Ge surface via 3-dimensional island transition (the minimum strain) as a function of the trench width. Considering the energies involved in the transition, we found that uniformly shaped Ge layers along the trenches were energetically more favorable than those with surface undulations as the width of the trench decreased. The strained Ge epilayers relaxed their energy by forming the defects, such as dislocations at the Ge/Si interfaces and stacking faults. From the strain analyses, the residual strains for parallel and perpendicular to the trench direction in the Ge layers were − 0.72% and − 0.22%, respectively. - Highlights: • The epitaxial Ge layers were grown on Si in 40-nm SiO2 trench arrays. • Surface stability of Ge epilayers in narrow SiO2 trenches was calculated. • Local strain variation was confirmed by using nanobeam electron diffraction. • Residual in-plane strain along the trench direction was − 0.72%

  3. Kinetics modeling and growth of Si layers by Liquid Phase Epitaxy Driven by Solvent Evaporation (LPESE)

    Science.gov (United States)

    Giraud, S.; Duffar, T.; Pihan, E.; Fave, A.

    2015-12-01

    Crystalline Si thin films on low-cost substrates are expected to be an alternative to bulk Si for PV applications. Liquid Phase Epitaxy (LPE) is one of the most suitable techniques for the growth of high quality Si layers since LPE is performed under almost equilibrium conditions. We investigated a growth technology which allows growing Si epitaxial thin films in steady temperature conditions through the control of solvent evaporation from a metallic solution saturated with silicon: Liquid Phase Epitaxy by Solvent Evaporation (LPESE). An analytical model aiming to predict solvent evaporation and Si crystallization rate is described and discussed for three solvents (Sn, In and Cu). Growth experiments are implemented in order to check the validity of the model. Experimental set up and growth procedure are presented. Si thin films were grown from Sn-Si and In-Si solution at temperatures between 900 and 1200 °C under high vacuum. The predicted solvent evaporation rate and Si growth rate are in agreement with the experimental measurements.

  4. Electron beam induced growth of tin whiskers

    International Nuclear Information System (INIS)

    We have investigated the influence of electron irradiation on tin whisker growth. Sputtered tin samples exposed to electron beam of 6 MeV energy exhibited fast whisker growth, while control samples did not grow any whiskers. The statistics of e-beam induced whiskers was found to follow the log-normal distribution. The observed accelerated whisker growth is attributed to electrostatic effects due to charges trapped in an insulating substrate. These results offer promise for establishing whisker-related accelerated life testing protocols

  5. Electron beam induced growth of tin whiskers

    Science.gov (United States)

    Vasko, A. C.; Warrell, G. R.; Parsai, E. I.; Karpov, V. G.; Shvydka, Diana

    2015-09-01

    We have investigated the influence of electron irradiation on tin whisker growth. Sputtered tin samples exposed to electron beam of 6 MeV energy exhibited fast whisker growth, while control samples did not grow any whiskers. The statistics of e-beam induced whiskers was found to follow the log-normal distribution. The observed accelerated whisker growth is attributed to electrostatic effects due to charges trapped in an insulating substrate. These results offer promise for establishing whisker-related accelerated life testing protocols.

  6. Characterization of CdTe, HgTe, and Hg1-xCdxTe grown by chemical beam epitaxy

    Science.gov (United States)

    Wagner, B. K.; Rajavel, D.; Benz, R. G.; Summers, C. J.

    1991-10-01

    Detailed characterization of chemical beam epitaxially (CBE) grown CdTe and Hg1-xCdxTe layers are reported. These characterizations include photoluminescence, infrared transmission, energy dispersive x-ray analysis, and variable temperature (10-300 K) Hall effect and resistivity measurements. The results indicate that high quality HgCdTe layers can be grown by CBE.

  7. Integration of carbon nanotubes with semiconductor technology: fabrication of hybrid devices by III–V molecular beam epitaxy

    DEFF Research Database (Denmark)

    Stobbe, Søren; Lindelof, P. E.; Nygård, J.

    2006-01-01

    incorporation of singlewall nanotubes in III–V semiconductor heterostructures grown by molecular beam epitaxy (MBE). We demonstrate that singlewall carbon nanotubes can be overgrown using MBE; electrical contacts to the nanotubes are obtained by GaMnAs grown at 250 °C. The resulting devices can exhibit field...

  8. Improving surface smoothness and photoluminescence of CdTe(1 1 1)A on Si(1 1 1) substrates grown by molecular beam epitaxy using Mn atoms

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jyh-Shyang, E-mail: jswang@cycu.edu.tw [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Center for Nano-Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Tsai, Yu-Hsuan; Chen, Chang-Wei; Dai, Zi-Yuan; Tong, Shih-Chang [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Yang, Chu-Shou [Graduate Institute of Electro-Optical Engineering, Tatung University, Taipei 10452, Taiwan (China); Wu, Chih-Hung [Institute of Nuclear Energy Research, Longtan 32546, Taiwan (China); Yuan, Chi-Tsu; Shen, Ji-Lin [Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China); Center for Nano-Technology, Chung Yuan Christian University, Chung-Li 32023, Taiwan (China)

    2014-04-01

    Highlights: • CdTe(1 1 1)A epilayers were grown on Si(1 1 1) substrates by molecular beam epitaxy. • We report an enhanced growth using Mn atoms. • The significant improvements in surface quality and optical properties were found. - Abstract: This work demonstrates an improvement of the molecular beam epitaxial growth of CdTe(1 1 1)A epilayer on Si(1 1 1) substrates using Mn atoms. The reflection high-energy electron diffraction patterns show that the involvement of some Mn atoms in the growth of CdTe(1 1 1)A is even more effective than the use of a buffer layer with a smooth surface for forming good CdTe(1 1 1)A epilayers. 10 K Photoluminescence spectra show that the incorporation of only 2% Mn significantly reduced the intensity of defect-related emissions and considerably increased the integral intensity of exciton-related emissions by a large factor of about 400.

  9. Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate

    International Nuclear Information System (INIS)

    We investigated the molecular beam epitaxy growth of three-dimensional (3D) Ge quantum dot crystals (QDCs) on periodically pit-patterned Si substrates. A series of factors influencing the growth of QDCs were investigated in detail and the optimized growth conditions were found. The growth of the Si buffer layer and the first quantum dot (QD) layer play a key role in the growth of QDCs. The pit facet inclination angle decreased with increasing buffer layer thickness, and its optimized value was found to be around 21°, ensuring that all the QDs in the first layer nucleate within the pits. A large Ge deposition amount in the first QD layer favors strain build-up by QDs, size uniformity of QDs and hence periodicity of the strain distribution; a thin Si spacer layer favors strain correlation along the growth direction; both effects contribute to the vertical ordering of the QDCs. Results obtained by atomic force microscopy and cross-sectional transmission electron microscopy showed that 3D ordering was achieved in the Ge QDCs with the highest ever areal dot density of 1.2 × 1010 cm−2, and that the lateral and the vertical interdot spacing were ∼10 and ∼2.5 nm, respectively. (paper)

  10. Erbium doping of silicon and silicon carbide using ion beam induced epitaxial crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Boucaud, P.; Julien, F.H.; Lourtioz, J.M.; Bernas, H.; Clerc, C.; Chaumont, J. [Univ. Paris XI, Orsay (France); Bodnar, S.; Regolini, J.L. [France Telecom CNET-CNS, Meylan (France); Lin, X.W. [Lawrence Berkeley Lab., CA (United States)

    1995-12-31

    Erbium doping of silicon and silicon carbide using implantation followed by ion beam induced epitaxial crystallization (IBIEC) is investigated. The implanted concentration of Er was 1.4 at.% in both cases. In Si(100), Rutherford backscattering/channeling revealed that about 40% of the Er atoms evolved upon rapid thermal annealing from an undetermined position (room temperature) to an interstitial tetrahedral position (650 C) and finally to a substitutional position (950 C). The remaining Er atoms were presumably trapped in the small precipitates visible in high resolution transmission electron microscopy. The photoluminescence at 1.54 {micro}m of Er{sup 3+} is enhanced with annealing and persists up to room temperature after a 950 C 1 min anneal. The high concentration of optically active Er atoms is illustrated by the lack of saturation of the photoluminescence at high pumping excitation intensity. Erbium was also implanted into cubic silicon carbide films prepared by chemical vapor deposition on Si at 900 C. Both solid phase epitaxy (SPE) and IBIEC were performed. After a 950 C anneal, the low temperature photoluminescence at 1.54 {micro}m after IBIEC was five times higher in SiC than in silicon. The difference in photoluminescence linewidth between IBIEC (broad lines) and SPE (sharp lines) is explained in terms of interactions between optically active erbium atoms.

  11. A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the recent result of GaAs/GaInP dual-junction solar cells grown by all solid-state molecular-beam-epitaxy (MBE). The device structure consists of a GaIn0.48P homojunction grown epitaxially upon a GaAs homojunction, with an interconnected GaAs tunnel junction. A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell, while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell, respectively. The energy loss mechanism of our GaAs/GaInP tandem dual-junction solar cells is discussed. It is demonstrated that the MBE-grown phosphide-containing III—V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency. (semiconductor devices)

  12. Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Tsuchida, Hidekazu; Ito, Masahiko; Kamata, Isaho; Nagano, Masahiro [Central Research Institute of Electric Power Industry (CRIEPI), Nagasaka, Yokosuka, Kanagawa (Japan)

    2009-07-15

    This paper surveys extended defects in 4H-SiC epilayers and reports recent results concerning fast epitaxial growth. Synchrotron X-ray topography, transmission electron microscopy, Nomarski optical microscopy and defect selective etching analysis are applied to investigate the nucleation and propagation of carrot defects, basal plane Frank-type defects, polytype inclusions and basal plane dislocations (BPDs) in 4H-SiC epitaxial growth. In the development of the 4H-SiC fast epitaxial growth technique, a very high growth rate of up to 250{mu}m/h is obtained in a newly developed vertical hot-wall-type reactor under low system pressure using a H{sub 2}+SiH{sub 4}+C{sub 3}H{sub 8} system. Good thickness and impurity doping uniformity are also obtained simultaneously over a large area, with the retention of a high growth rate. A 4H-SiC epilayer virtually free from BPDs is obtained on a 4 off Si-face substrate. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Young Sheng-Joue

    2011-01-01

    Full Text Available Abstract The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111 substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.

  14. Abnormal optical behaviour of InAsSb quantum dots grown on GaAs substrate by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rihani, J. [Laboratoire de Photovoltaique et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)], E-mail: rihani_jaouher@yahoo.fr; Ben Sedrine, N. [Laboratoire de Photovoltaique et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia); Sallet, V.; Harmand, J.C. [Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay 91 460 Marcoussis (France); Oueslati, M. [Unite nanoelectronique Faculte des Sciences de Tunis, Campus Universitaire, Elmanar 2092 Tunis (Tunisia); Chtourou, R. [Laboratoire de Photovoltaique et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2008-07-01

    InAs(Sb) quantum dots (QDs) samples were grown on GaAs (001) substrate by Molecular Beam Epitaxy (MBE). The structural characterization by Atomic Force Microscopy (AFM) of samples shows that InAsSb islands size increases strongly with antimony incorporation in InAs/GaAs QDs and decreases with reducing the growth temperature from 520 deg. C to 490 deg. C. Abnormal optical behaviour was observed in room temperature (RT) photoluminescence (PL) spectra of samples grown at high temperature (520 deg. C). Temperature dependent PL study was investigated and reveals an anomalous evolution of emission peak energy (EPE) of InAsSb islands, well-known as 'S-inverted curve' and attributed to the release of confined carriers from the InAsSb QDs ground states to the InAsSb wetting layer (WL) states. With only decreasing the growth temperature, the S-inverted shape was suppressed indicating a fulfilled 3D-confinement of carriers in the InAsSb/GaAs QD sample.

  15. Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

    International Nuclear Information System (INIS)

    The structural and optical properties of piezoelectric (211)B InAs nanostructures grown by molecular beam epitaxy are systematically investigated as a function of the various growth parameters. Depending on the specific growth conditions, we show that the InAs nanostructures take the form of a quantum dot (QD) or a quantum dash, their height ranges between 2 and 20 nm, and their density varies from a few times 108 cm-2 all the way up to a few times 1010 cm-2. The (211)B QDs are characterized by large aspect ratios, which are compatible with a truncated pyramid morphology. By analyzing the QD emission spectrum, we conclude that only small size QDs, with heights less than 3 nm, are optically active. This is consistent with high resolution transmission electron microscopy observations showing that large QDs contain misfit dislocations, whereas small QDs are dislocation-free. The formation of a two-dimensional wetting layer is observed optically, and its thickness is determined to be between 0.30 and 0.39 nm. Finally, the large blueshift in the QD emission observed with increasing excitation power represents a clear evidence of the strong built-in piezoelectric field present in these dots.

  16. A Minimal Model for Large-scale Epitaxial Growth Kinetics of Graphene

    CERN Document Server

    Jiang, Huijun

    2015-01-01

    Epitaxial growth via chemical vapor deposition is considered to be the most promising way towards synthesizing large area graphene with high quality. However, it remains a big theoretical challenge to reveal growth kinetics with atomically energetic and large-scale spatial information included. Here, we propose a minimal kinetic Monte Carlo model to address such an issue on an active catalyst surface with graphene/substrate lattice mismatch, which facilitates us to perform large scale simulations of the growth kinetics over two dimensional surface with growth fronts of complex shapes. A geometry-determined large-scale growth mechanism is revealed, where the rate-dominating event is found to be $C_{1}$-attachment for concave growth front segments and $C_{5}$-attachment for others. This growth mechanism leads to an interesting time-resolved growth behavior which is well consistent with that observed in a recent scanning tunneling microscopy experiment.

  17. Large-scale epitaxial growth kinetics of graphene: A kinetic Monte Carlo study

    International Nuclear Information System (INIS)

    Epitaxial growth via chemical vapor deposition is considered to be the most promising way towards synthesizing large area graphene with high quality. However, it remains a big theoretical challenge to reveal growth kinetics with atomically energetic and large-scale spatial information included. Here, we propose a minimal kinetic Monte Carlo model to address such an issue on an active catalyst surface with graphene/substrate lattice mismatch, which facilitates us to perform large scale simulations of the growth kinetics over two dimensional surface with growth fronts of complex shapes. A geometry-determined large-scale growth mechanism is revealed, where the rate-dominating event is found to be C1-attachment for concave growth-front segments and C5-attachment for others. This growth mechanism leads to an interesting time-resolved growth behavior which is well consistent with that observed in a recent scanning tunneling microscopy experiment

  18. Highly Crystalline Films of Organic Small Molecules with Alkyl Chains Fabricated by Weak Epitaxy Growth.

    Science.gov (United States)

    Zhu, Yangjie; Chen, Weiping; Wang, Tong; Wang, Haibo; Wang, Yue; Yan, Donghang

    2016-05-12

    Because side-chain engineering of organic conjugated molecules has been widely utilized to tune organic solid-state optoelectronic properties, the achievement of their high-quality films is important for realizing high-performance devices. Here, highly crystalline films of an organic molecule with short alkyl chains, 5,8,15,18-tetrabutyl-5,8,15,18-tetrahydroindolo[3,2-a]indole[30,20:5,6]quinacridone (C4-IDQA), are fabricated by weak epitaxy growth, and highly oriented, large-area, and continuous films are obtained. Because of the soft matter properties, the C4-IDQA molecules can adjust themselves to realize commensurate epitaxy growth on the inducing layers and exhibited good lattice matching in the thin film phase. The crystalline phase is also observed in thicker C4-IDQA films. The growth behavior of C4-IDQA on the inducing layer is further investigated, including the strong dependence of film morphologies on substrate temperatures and deposition rates due to the poor diffusion ability of C4-IDQA molecules. Moreover, highly crystalline films and high electron field-effect mobility are also obtained for the small molecule N,N'-dioctyl-3,4:9,10-perylene tetracarboxylic diimide (C8-PTCDI), which demonstrate that the weak epitaxy growth method could be an effective way to fabricate highly crystalline films of organic small molecules with flexible side chains. PMID:27116036

  19. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    International Nuclear Information System (INIS)

    Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a TC of 39K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

  20. Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360 deg., the TMR shows fourfold symmetry, i.e., biaxial anisotropy, aligned with the crystalline axis but not the junction geometrical long axis. The TMR reaches ∼1900% at 4 K, corresponding to an interfacial spin polarization of >95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

  1. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We report the highest mobility values above 2000 cm2/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  2. Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Quantitative mobility spectrum analysis (QMSA) was performed on multiple magnetic field Hall effect measurements of indium nitride grown by molecular beam epitaxy. This enables two clearly distinct electron species to be identified, which are attributed to the bulk and a surface accumulation layer. In this material, single magnetic field data corresponds to neither electron species, as both contribute significantly to the total conduction. The bulk electron distribution has an extracted average Hall mobility of 3570 cm2/(Vs) at 300 K with a concentration of 1.5 x 1017 cm-3, while the surface electrons have sheet charge density that is an order of magnitude higher than previously reported surface concentrations. The high quality bulk characteristics revealed emphasise the importance of using multi-carrier analysis when performing transport measurements on InN. (Abstract Copyright [2007], Wiley Periodicals, Inc.)

  3. Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    High quality InN nanocolumns have been grown by molecular beam epitaxy on bare and AlN-buffered Si(111) substrates. The accommodation mechanism of the InN nanocolumns to the substrate was studied by transmission electron microscopy. Samples grown on AlN-buffered Si(111) show abrupt interfaces between the nanocolumns and the buffer layer, where an array of periodically spaced misfit dislocations develops. Samples grown on bare Si(111) exhibit a thin SixNy at the InN nanocolumn/substrate interface because of Si nitridation. The SixNy thickness and roughness may affect the nanocolumn relative alignment to the substrate. In all cases, InN nanocolumns grow strain- and defect-free

  4. Thermal stability of CdZnO thin films grown by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    CdZnO thin films with near-band-edge (NBE) photoluminescence (PL) emission from 2.39 eV to 2.74 eV were grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates with 800 deg. C in situ annealing. CdZnO thin films evolve from pure wurtzite (wz) structure, to mixture of wz and rock-salt (rs) structures confirmed by X-ray diffraction studies. Rapid-thermo-annealing (RTA) was performed on in situ annealed CdZnO samples. Pure wz CdZnO shows insignificant NBE PL peak shift after RTA, while mixture structure CdZnO shows evident blue shifts due to phase change after annealing, indicating the rs phase CdZnO changes to wz phase CdZnO during RTA process.

  5. Fe-doped InN layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. It is found that Fe-doping leads to drastic increase of residual electron concentration, which is different from the semi-insulating property of Fe-doped GaN. However, this heavy n-type doping cannot be fully explained by doped Fe-concentration ([Fe]). Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the surface is degraded with high density pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN.

  6. SIMS studies of CI- doped Zn Se epilayers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chlorine is one of the most used species to produce n-type zinc selenium epilayers. In this paper, we present secondary ion mass spectrometry profiles of a series of chlorine-doped zinc selenium samples, which were grown in a molecular beam epitaxy chamber. These profiles have been used to examine the limitation of secondary ion mass spectrometry analysis of narrow chlorine-delta layers. In order to covert secondary ion mass spectrometry raw data to quantified data, the depth profile from a chlorine-implanted standard sample has been used to estimate the useful ion yieldof chlorine and thus the instrument sensitivity for chlorine in a zinc selenium matrix. The useful ion yieldand detection limit of chlorine in the zinc selenium host matrix were calculated to be 4.7 X 10-17 atoms/ cm3, respectively

  7. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Gao, Xian; Wei, Zhipeng; Zhao, Fenghuan; Yang, Yahui; Chen, Rui; Fang, Xuan; Tang, Jilong; Fang, Dan; Wang, Dengkui; Li, Ruixue; Ge, Xiaotian; Ma, Xiaohui; Wang, Xiaohua

    2016-01-01

    We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration. PMID:27381641

  8. High quality YBCO superconductive thin films fabricated by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    High quality YBa2Cu3O6+x (YBCO) superconductive thin films have been fabricated on the SrTiO3(100) substrate using laser molecular beam epitaxy (laser-MBE).The active oxygen source was used,which made the necessary ambient oxygen pressure be 2-3 orders lower than that in pulsed laser deposition (PLD).Tc0 is 85-87 K,and Jc~1.0×106 A/cm2.Atomic force microscopy (AFM) measurements show that no obvious particulates can be observed and the root mean square roughness is 7.8 nm.High stability DC superconducting quantum interference devices (DC-SQUID) was fabricated using this YBCO thin film.

  9. Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis

    International Nuclear Information System (INIS)

    We present an experimental investigation of the magnetic, electrical, and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for y≤0.3. X-ray diffraction measurements reveal that the layers are under tensile strain, which gives rise to a magnetic easy axis perpendicular to the plane of the layers. The strength of the magnetic anisotropy and the coercive field increases as the phosphorous concentration is increased. The resistivity of all samples shows metallic behavior with the resistivity increasing as y increases. These materials will be useful for studies of micromagnetic phenomena requiring metallic ferromagnetic material with perpendicular magnetic anisotropy

  10. Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Federico Baiutti

    2014-05-01

    Full Text Available In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2−xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control.

  11. Epitaxial growth of in-plane-dimerized, single phase NbO2 thin films for metal-insulator transition applications

    Science.gov (United States)

    Posadas, Agham; Hadamek, Tobias; O'Hara, Andy; Demkov, Alexander

    2015-03-01

    NbO2 is a exhibits a metal-insulator transition that may have potential applications in electronic devices. The strong conductivity change in NbO2 occurs along the dimerization direction and for devices utilizing NbO2 as a channel material (in-plane transport) such as transistors, one would like the dimerization direction to be in the plane of the film. The electrical properties of Nb oxides are strongly dependent on the oxidation state of Nb. It is therefore critical to be able to control the oxidation state of Nb during growth. Here, we describe the epitaxial growth of in-plane-dimerized NbO2 using molecular beam epitaxy on a variety of substrates (STO, LSAT, MgO, BTO and GaN), growth temperatures, and oxygen-to-niobium flux ratios. We show that the particular substrate used significantly affects the bulk and surface crystallinity, as well as the degree of oxidation. We also show the evolution of the valence and core level photoemission spectra of Nb oxides as a function of oxygen-to-niobium flux ratio and point out the optimum growth conditions to achieve phase-pure, epitaxial NbO2 films.

  12. Elastic strain relief in nitridated Ga metal buffer layers for epitaxial GaN growth

    International Nuclear Information System (INIS)

    Gallium nitride epitaxial layers were grown on sapphire by molecular-beam epitaxy using nitridated gallium metal films as buffer layers. The mechanical properties of the buffer layers were investigated and correlated with their chemical composition as determined by synchrotron radiation photoelectron spectroscopy. Biaxial tension experiments were performed by bending the substrates in a pressure cell designed for simultaneous photoluminescence measurements. The shift of the excitonic luminescence peak was used to determine the stress induced in the main GaN epilayer. The fraction of stress transferred from substrate to main layer was as low as 27% for samples grown on nitridated metal buffer layers, compared to nearly 100% for samples on conventional low-temperature GaN buffer layers. The efficiency of stress relief increased in proportion to the fraction of metallic Ga in the nitridated metal buffer layers. These findings suggest GaN films containing residual metallic Ga may serve as compliant buffer layers for heteroepitaxy

  13. Evidence for Germanene growth on epitaxial hexagonal (h)-AlN on Ag(1 1 1)

    Science.gov (United States)

    d'Acapito, F.; Torrengo, S.; Xenogiannopoulou, E.; Tsipas, P.; Marquez Velasco, J.; Tsoutsou, D.; Dimoulas, A.

    2016-02-01

    In this work, a structural analysis of Ge layers deposited by molecular beam epitaxy (MBE) on Ag(1 1 1) surfaces with and without an AlN buffer layer have been investigated by x-ray Absorption Spectroscopy (XAS) at the Ge-K edge. For the Ge layers deposited on h-AlN buffer layer on Ag(1 1 1) an interatomic Ge-Ge distance {{R}\\text{Ge-\\text{Ge}}}=2.38 Å is found, typical of 2-Dimensional Ge layers and in agreement with the theoretical predictions for free standing low-buckled Germanene presented in literature. First principles calculations, performed in the density functional theory (DFT) framework, supported the experimental RHEED and XAS findings, providing evidence for the epitaxial 2-D Ge layer formation on h-AlN/Ag(1 1 1) template.

  14. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky-Krastanov growth mode. However, this three-dimensional island formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature. (orig.)

  15. High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

    International Nuclear Information System (INIS)

    We have studied the epitaxial Si growth on 4-inch-(001) Si wafers by atmospheric pressure plasma chemical vapor deposition (AP-PCVD) using a porous-carbon electrode. Defect-free growth of epitaxial Si is confirmed in the temperature range 470-570 deg. C by transmission electron microscopy. High minority carrier generation lifetime (2.0 ms) is observed in the Si film grown at 570 deg. C with a rate of 0.35 μm/min. In situ H2 AP-plasma cleaning of the substrate surface is effective for eliminating O and C concentration peaks at the film/substrate interface. Effects of plasma heating and ion bombardment of the growing-film surface have been discussed

  16. Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy

    International Nuclear Information System (INIS)

    We investigate the heterojunction effect between para-sexiphenyl (p-6P) and copper phthalocyanine (CuPc) using Kelvin probe force microscopy. CuPc films are grown on the inducing layer p-6P by a weak epitaxy growth technique. The surface potential images of Kelvin probe force microscopy indicate the band bending in CuPc, which reduces grain boundary barriers and lead to the accumulation of holes in the CuPc layer. The electrical potential distribution on the surface of heterojunction films shows negligible grain boundary barriers in the CuPc layers. The relation between band bending and grain boundary barrier in the weak epitaxy growth thin films is revealed. (condensed matter: structure, mechanical and thermal properties)

  17. Influence of a thin interfacial oxide layer on the ion beam assisted epitaxial crystallization of deposited Si

    Science.gov (United States)

    Priolo, F.; La Ferla, A.; Spinella, C.; Rimini, E.; Ferla, G.; Baroetto, F.; Licciardello, A.

    1988-12-01

    The epitaxial crystallization of chemical vapor deposited Si layers on Si substrates with a thin interfacial oxide layer was induced by a 600 keV Kr beam in the temperature range 350-500 °C. During irradiation the single crystal-amorphous interface velocity was measured in situ by monitoring the reflectivity of He-Ne laser light. We show that a critical irradiation dose is needed before the interfacial oxide breaks down and epitaxial regrowth can take place. This critical dose depends exponentially on the reciprocal temperature with an activation energy of 0.44 eV.

  18. Epitaxial growth of zinc on ferritic steel under high current density electroplating conditions

    International Nuclear Information System (INIS)

    Highlights: •EBSD of electroplated Zn on Fe or steel was performed. •Zn grows epitaxially on electropolished ferritic steel following Burger's orientation relation. •Surface deformation of steel leads to multiple electroplated zinc grains with random orientation. •Zn grows epitaxially even on industrial surfaces with little surface deformation. •Multiple zinc grains on one steel grain can show identical orientation relations. -- Abstract: The dependence of the crystal orientation of electrodeposited zinc of the grain orientation on ferritic steel substrate at high current density deposition (400 mA cm−2) during a pulse-plating process was investigated by means of EBSD (electron backscatter diffraction) measurements. EBSD-mappings of surface and cross-sections were performed on samples with different surface preparations. Furthermore an industrial sample was investigated to compare lab-coated samples with the industrial process. The epitaxial growth of zinc is mainly dependent on the condition of the steel grains. Deformation of steel grains leads to random orientation while zinc grows epitaxially on non-deformed steel grains even on industrial surfaces

  19. Thin film evolution equations from (evaporating) dewetting liquid layers to epitaxial growth

    International Nuclear Information System (INIS)

    In the present contribution we review basic mathematical results for three physical systems involving self-organizing solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting, evaporation/condensation or epitaxial growth, respectively. We highlight similarities and differences of the three systems based on the observation that in certain limits all of them may be described using models of similar form, i.e. time evolution equations for the film thickness profile. Those equations represent gradient dynamics characterized by mobility functions and an underlying energy functional. Two basic steps of mathematical analysis are used to compare the different systems. First, we discuss the linear stability of homogeneous steady states, i.e. flat films, and second the systematics of non-trivial steady states, i.e. drop/hole states for dewetting films and quantum-dot states in epitaxial growth, respectively. Our aim is to illustrate that the underlying solution structure might be very complex as in the case of epitaxial growth but can be better understood when comparing the much simpler results for the dewetting liquid film. We furthermore show that the numerical continuation techniques employed can shed some light on this structure in a more convenient way than time-stepping methods. Finally we discuss that the usage of the employed general formulation does not only relate seemingly unrelated physical systems mathematically, but does allow as well for discussing model extensions in a more unified way.

  20. Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

    Science.gov (United States)

    Treu, J.; Speckbacher, M.; Saller, K.; Morkötter, S.; Döblinger, M.; Xu, X.; Riedl, H.; Abstreiter, G.; Finley, J. J.; Koblmüller, G.

    2016-02-01

    We delineate the optimized growth parameter space for high-uniformity catalyst-free InGaAs nanowire (NW) arrays on Si over nearly the entire alloy compositional range using selective area molecular beam epitaxy. Under the required high group-V fluxes and V/III ratios, the respective growth windows shift to higher growth temperatures as the Ga-content x(Ga) is tuned from In-rich to Ga-rich InGaAs NWs. Using correlated x-ray diffraction, transmission electron microscopy, and micro-photoluminescence spectroscopy, we identify structural defects to govern luminescence linewidths in In-rich (x(Ga) 0.6) NWs, whereas limitations at intermediate Ga-content (0.4 blue-shifted to red-shifted photoluminescence emission relative to the band edge emission of the bulk ZB InGaAs phase.

  1. Structure of CdTe-Cd1 - xMnxTe multiple quantum wells grown on (001) InSb substrates by molecular beam epitaxy

    Science.gov (United States)

    Williams, G. M.; Cullis, A. G.; Whitehouse, C. R.; Ashenford, D. E.; Lunn, B.

    1989-09-01

    Molecular beam epitaxy has been used to prepare multiple quantum well structures of CdTe/Cd1-xMnxTe on (001) InSb substrates. The growth of such a system on InSb allows the use of particularly low growth temperatures, hence minimizing interdiffusion effects. This study presents the first transmission electron microscope investigation of this multilayer system grown on InSb. The work clearly demonstrates that multiple quantum wells of high structural quality can be grown reproducibly over a wide range of layer thicknesses. The importance of efficient substrate surface cleaning prior to growth is demonstrated. In order to grow high structural quality multilayers, the choice of buffer layer is also important and a possible explanation for this observation is given.

  2. High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe2/MoS2

    Science.gov (United States)

    Diaz, Horacio Coy; Ma, Yujing; Chaghi, Redhouane; Batzill, Matthias

    2016-05-01

    Growth of transition metal dichalcogenide heterostructures by molecular beam epitaxy (MBE) promises synthesis of artificial van der Waals materials with controllable layer compositions and separations. Here, we show that MBE growth of 2H-MoTe2 monolayers on MoS2 substrates results in a high density of mirror-twins within the films. The grain boundaries are tellurium deficient, suggesting that Te-deficiency during growth causes their formation. Scanning tunneling microscopy and spectroscopy reveal that the grain boundaries arrange in a pseudo periodic "wagon wheel" pattern with only ˜2.6 nm repetition length. Defect states from these domain boundaries fill the band gap and thus give the monolayer an almost metallic property. The band gap states pin the Fermi-level in MoTe2 and thus determine the band-alignment in the MoTe2/MoS2 interface.

  3. Structural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100)

    International Nuclear Information System (INIS)

    We combine nanoimprint lithography and molecular beam epitaxy for the site-controlled growth of InAs quantum dot chains on GaAs(100) substrates. We study the influence of quantum dot growth temperature and regrowth buffer thickness on the formation of the quantum dot chains. In particular, we show that by carefully tuning the growth conditions we can achieve equal quantum dot densities and photoluminescence ground state peak wavelengths for quantum dot chains grown on patterns oriented along the [011], [011-bar], [011] and [001] directions. Furthermore, we identify the crystal facets that form the sidewalls of the grooves in the differently oriented patterns after capping and show that the existence of (411)A sidewalls causes reduction of the QD density as well as sidewall roughening.

  4. Structural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100)

    Energy Technology Data Exchange (ETDEWEB)

    Hakkarainen, T V; Tommila, J; Schramm, A; Tukiainen, A; Ahorinta, R; Dumitrescu, M; Guina, M, E-mail: teemu.hakkarainen@tut.fi [Optoelectronics Research Centre, Tampere University of Technology, PO Box 692, FIN-33101 Tampere (Finland)

    2011-07-22

    We combine nanoimprint lithography and molecular beam epitaxy for the site-controlled growth of InAs quantum dot chains on GaAs(100) substrates. We study the influence of quantum dot growth temperature and regrowth buffer thickness on the formation of the quantum dot chains. In particular, we show that by carefully tuning the growth conditions we can achieve equal quantum dot densities and photoluminescence ground state peak wavelengths for quantum dot chains grown on patterns oriented along the [011], [011-bar], [011] and [001] directions. Furthermore, we identify the crystal facets that form the sidewalls of the grooves in the differently oriented patterns after capping and show that the existence of (411)A sidewalls causes reduction of the QD density as well as sidewall roughening.

  5. Preparation of GaAs and Ga1-xAlxAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy

    Science.gov (United States)

    Tokumitsu, Eisuke; Katoh, Toshiaki; Kimura, Ryuhei; Konagai, Makoto; Takahashi, Kiyoshi

    1986-08-01

    Metalorganic molecular beam epitaxial (MOMBE) growth of GaAs and (GaAl)As using triethylgallium (TEG) and triethylaluminum (TEA) has been studied. N-GaAs/p-GaAs multi-layer structures were prepared by applying an alternating ionization voltage to hydrogen. Single-crystal Ga1-xAlxAs ternary alloy with good surface mophology was successfully grown by introducing TEA as an Al source. The epitaxial layers typically showed p-type conduction with a carrier concentration of more than 1018 cm-3, this being due to residual carbon. A (GaAl)As/GaAs multiquantum well (MQW) heterostructure was fabricated by switching TEA and it was observed that the photoluminescence peak energies from the MQW structures were shifted to the higher energy position. Furthermore, selective growth of GaAs and (GaAl)As on a partly SiO2 masked GaAs substrate was investigated. In the MOMBE growth of (GaAl)As, polycrystalline film was deposited on the SiO2 masked region, while no deposition took place in the growth of GaAs.

  6. Epitaxial growth of nobel metals on alumina substrates

    International Nuclear Information System (INIS)

    The influence of the reconstructed (0001) α-Al2O3 surface on the heteroepitaxial growth and adhesion properties of small metal particles (gold, silver and copper) of noncontinuous thin films has been investigated. The crystallographic structure and morphology of substrate surfaces were examined by Reflection High Energy Electron Diffraction and Atomic Force Microscopy techniques. The reconstructed surfaces are terminated by one or more Aluminum atomic layers. By means of the Transmission Electronic Microscopy, the various granulometric and lattice parameters variations are investigated during different stages of the heteroepitaxial growth of metallic thin films. We estimated the adhesion energy values for each case of metal//(0001)α-Al2O3 interfaces by two methods: the maximum cluster density and the Lifshits theory of Van der Waals energy of interfaces. The results of both methods are in good agreement. Using these methods, we found interfaces Hamaker's constants values and we investigated all the heteroepitaxial growth steps.(author)

  7. Ultrafast VLS growth of epitaxial β- Ga2O3 nanowires

    International Nuclear Information System (INIS)

    Well-defined monoclinic nanostructures of β- Ga2O3 were grown in a chemical vapor deposition apparatus using metallic gallium and oxygen as sources. Stable growth conditions were deduced for nanorods, nanoribbons, nanowires and cones. The types of nanostructures are determined by the growth temperature. We suppose that the vapor-solid growth mechanism rules the growth of nanoribbons and rods. For the nanowires we observed catalytic gold droplets atop, characteristic for the VLS growth mechanism with an extremely high growth rate of up to 10 μm min-1. Nanowires grown on Al2O3 substrates showed an excellent tendency to grow epitaxially, mapping the hexagonal symmetry of Al2O3(0001).

  8. A modified hot wall epitaxy technique for the growth of CdTe and Hg sub 1-x Cd sub x epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Rogalski, A.; Piotrowski, J. (Inst. of Technical Physics, WAT, Warsaw (Poland)); Gronkowski, J. (Inst. of Experimental Physics, Warsaw Univ. (Poland))

    1990-10-15

    A modified hot wall epitaxy technique has been used for the growth of high quality CdTe epilayers on GaAs substrates. X-ray topographic analysis indicates that these epilayers have device quality crystalline structures. The possibility of growth of Hg{sub 1-x}Cd{sub x}Te epilayers in this deposition system has been demonstrated for the first time. (orig.).

  9. A transmission electron microscopy study of the nucleation, growth and structure of epitaxial (PbSn)Te films

    International Nuclear Information System (INIS)

    This dissertation reports on a study of the nucleation, growth and structure of Pb0,8Sn0,2Te films grown by the Hot Wall Epitaxial (HWE) technique onto BaF2 substrates. Following a discussion of the theoretical aspects of epitaxial growth and a detailed review of recrystallisations and reorientation processes, the experimental techniques and procedures followed are presented. Special attention is given to the techniques of transmission electron microscopy and electron diffraction as well as sample preparation. The most significant result of this work is the finding that, under certain deposition conditions, a polycrystalline film developes to a good epitaxial film with thickness. It is shown that the epitaxial overgrowth is the result, not only of epitaxial nucleation, but is also determined by recrystallisation and reorientation processes during growth. These processes are studied as a function of substrate temperature and orientation in order to explain the resultant structure of the continuous films. The defects in thin continuous films are characterised and shown to depend in nature and density on the thermal history of the complete growth cycle. The significance of the various findings is discussed in terms of epitaxial growth theories and qualitative models are developed in order to explain the experimental results

  10. A multichannel reflectance anisotropy spectrometer for epitaxial growth monitoring

    Science.gov (United States)

    Ariza-Flores, D.; Ortega-Gallegos, J.; Núñez-Olvera, O.; Balderas-Navarro, R. E.; Lastras-Martínez, L. F.; Guevara-Macías, L. E.; Lastras-Martinez, A.

    2015-11-01

    We report on a reflectance anisotropy (RA) spectrometer capable of measuring reflectance spectra on the 100 ms time-scale and sensitivity in the upper 10-4 range. A multichannel lock-in amplifier was used to acquire 32 wavelengths RA spectra covering the 2.25-3.85 eV photon energy range, where the E 1 and {{E}1}+{{Δ }1} transitions of GaAs and other technologically relevant III-V semiconductor are located. The RA spectra recorded during the first stages of the GaAs homoepitaxial deposition are presented for the first 0.38 monolayers of growth, showing significative changes in the lineshape with low noise. Thanks to the capabilities of this instrument, it is possible to observe in detail, in terms of the evolution of RA spectra, the processes carried out during the migration of surface reconstruction between two stable phases present in the homoepitaxial growth of GaAs.

  11. Epitaxial growth and oxidation of thin gold and ruthenium films

    OpenAIRE

    Langsdorf, Daniel Wolfgang

    2015-01-01

    In the present work the growth and redox behavior of thin Au islands or films with various thicknesses (two to five layers) deposited on Ru(0001) was studied by x-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). By exposure of atomic oxygen at room temperature, small oxidized gold nanoparticles are formed by the fragmentation of the metallic gold islands or film. For smaller exposures of atomic oxygen (gleich vier Goldlagen) deutlich weniger Partikel geformt werde...

  12. Characterization of GaNxAs1-x Alloy Grown on GaAs by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    李联合; 张伟; 潘钟; 林耀望; 吴荣汉

    2000-01-01

    The GaNxAs1-x alloy has been investigated which is grown on GaAs (100) substrate by molecular beam epitaxy with a DC-plasma nitrogen source. The samples are characterized by high resolution X-ray diffraction (HRXRD) and low temperature photoluminescence (PL) measurements. Both HRXRD and PL measurements demonstrate that the crystalline and optical qualities of GaNxAs1-x alloy degrade rapidly with the increase of N composition. The nitrogen composition of 4.5 % can be obtained in GaNxAs1-x/GaAs quantum well by optimizing growth conditions,through which a photoluminescence peak of 1201nm is observed at a low temperature (10 K). The dependence of GaNxAs1-x band gap energy on the nitrogen composition in this investigation corresponds very well with that of the theoretical one based on the dielectric model when considering the effect of the strain. At the same time,we also demonstrate that the bowing parameter of GaNxAs1-x alloy is composition dependent.

  13. Precipitation control and activation enhancement in boron-doped p+-BaSi2 films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Precipitation free boron (B)-doped as-grown p+-BaSi2 layer is essential for the BaSi2 p-n junction solar cells. In this article, B-doped p-BaSi2 layers were grown by molecular beam epitaxy on Si(111) substrates, and the influence of substrate growth temperature (TS) and B temperature (TB) in the Knudsen cell crucible were investigated on the formation of B precipitates and the activation efficiency. The hole concentration, p, reached 1.0 × 1019 cm−3 at room temperature for TS = 600 and TB = 1550 °C. However, the activation rate of B was only 0.1%. Furthermore, the B precipitates were observed by transmission electron microscopy (TEM). When the TS was raised to 650 °C and the TB was decreased to 1350 °C, the p reached 6.8 × 1019 cm−3, and the activation rate increased to more than 20%. No precipitation of B was also confirmed by TEM.

  14. Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device

  15. Molecular beam epitaxy of CdTe and HgCdTe on large-area Si(100)

    Science.gov (United States)

    Sporken, R.; Lange, M. D.; Faurie, Jean-Pierre

    1991-09-01

    The current status of molecular beam epitaxy (MBE) of CdTe and HgCdTe on Si(100) is reviewed. CdTe and HgCdTe grow in the (111)B orientation on Si(100); monocrystalline films with two domains are obtained on most nominal Si(100) substrates, single domain films are grown on misoriented substrates and on nominal Si(100) preheated to 900-950 degree(s)C. Double-crystal x-ray rocking curves (DCRCs) with full-width at half-maximum (FWHM) as low as 110 arcsec are reported for HgCdTe on silicon; these layers are n-type, and electron mobilities higher than 5 X 104 cm2V-2s-1 are measured at 23 K for x equals 0.26. Excellent thickness and composition uniformity is obtained: standard deviation of the CdTe thickness 0.4% of the average thickness on 2-in. and 2.3% on 5-in., standard deviation of the Cd concentration in the HgCdTe layers 0.6% of the average concentration on 3-in. and 2.4% on 5-in. First results regarding growth of CdTe on patterned Si substrates are also reported.

  16. Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

    International Nuclear Information System (INIS)

    Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n+-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers

  17. High-Resistivity Semi-insulating AlSb on GaAs Substrates Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Vaughan, E. I.; Addamane, S.; Shima, D. M.; Balakrishnan, G.; Hecht, A. A.

    2016-04-01

    Thin-film structures containing AlSb were grown using solid-source molecular beam epitaxy and characterized for material quality, carrier transport optimization, and room-temperature radiation detection response. Few surface defects were observed, including screw dislocations resulting from shear strain between lattice-mismatched layers. Strain was also indicated by broadening of the AlSb peak in x-ray diffraction measurements. Threading dislocations and interfacial misfit dislocations were seen with transmission electron microscopy imaging. Doping of the AlSb layer was introduced during growth using GaTe and Be to determine the effect on Hall transport properties. Hall mobility and resistivity were largest for undoped AlSb samples, at 3000 cm2/V s and 106 Ω cm, respectively, and increased doping levels progressively degraded these values. To test for radiation response, p-type/intrinsic/ n-type (PIN) diode structures were grown using undoped AlSb on n-GaAs substrates, with p-GaSb cap layers to protect the AlSb from oxidation. Alpha-particle radiation detection was achieved and spectra were produced for 241Am, 252Cf, and 239Pu sources. Reducing the detector surface area increased the pulse height observed, as expected based on voltage-capacitance relationships for diodes.

  18. High purity GaAs and Al xGa 1-xAs grown by metalorganic molecular beam epitaxy

    Science.gov (United States)

    Furuhata, Naoki; Okamoto, Akihiko; Hoshino, Hitoshi

    1990-06-01

    High purity GaAs and Al xGa 1- xAs were grown by metalorganic molecular beam epitaxy (MOMBE) using metalorganic sources and arsenic (As 4). In GaAs growth using triethylgallium (TEG) and As 4, carrier concentrations depended on As 4 pressure and substrate temperatures. Below 1.5 x 10 -4 Torr As 4 pressure, the p-type carrier concentrations decreased with an increase in As 4 pressure. Above 1.5 x 10 -4 Torr As 4 pressure, the epilayer converted from p-type to n-type conductivity. Carrier concentrations decreased with a decrease in substrate temperatures. At 500°C and 1.5 x 10 -4 Torr As 4 pressure, the carrier concentration in the p-type GaAs epilayer exhibited 1.5 x 10 14 cm -3 with a room temperature mobility of 400 cm 2/V.s. Al xGa 1-xAs ( x=0.1-0. .2) was also grown using TEG, three different Al sources (triethylaluminum (TEA), trimethylaluminum (TMA) and dimethylaluminum hydride (DMAH) and As 4. Using TEG, TEA and As 4, the Al 0.15Ga 0.85As epilayer showed p-type conduction with carrier concentration of 1.2x10 15 cm -3 and mobility of 117 cm 2/V.s. This carrier concentration is the lowest value ever reported for Al xGa 1- xAs grown by MOMBE.

  19. Epitaxial growth of group IV materials by chemical vapor deposition for Germanium Metal Oxide Semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Vincent, Benjamin; Loo, Roger; Caymax, Matty [imec, Kapeldreef 75, B-3001 Leuven (Belgium)

    2011-07-01

    Over the past 5-10 years, germanium has attracted a lot of interest to replace Silicon as a high carrier mobility material in future p-Metal Oxide Semiconductors transistors. This paper reviews developments of epitaxial Group IV materials (silicon, germanium, tin and alloys) by means of Reduced Pressure Chemical Vapor Deposition for use as Channel, Gate stack and Source/Drain in high performance Germanium transistors. We first describe Germanium growth on standard Silicon wafers. Selective epitaxial growth within Shallow Trench Isolation structures allows seamless integration of Germanium channels in Si platform with a significant defect reduction down to levels required for state-of-the-art VLSI technology. Next we focus on the most successful passivation approach for Germanium MOS interfaces by means of ultrathin epitaxial Si capping layers. This moves the problem of gate stack formation from a germanium surface to a silicon surface. We discuss novel extremely low temperature CVD processes involving innovative precursors, and impacts of point defects, strain relaxation and Silicon-Germanium intermixing on Germanium device performance. Finally, the implementation of Germanium-Tin alloys in embedded Source/Drain regions in Germanium transistors is proposed as an innovative architecture to implement strain in Germanium channels.

  20. Nucleation of RBa2Cu3Oy high-Tc superconductors during epitaxial film growth

    International Nuclear Information System (INIS)

    In this article the authors describe some recent progress in understanding nucleation of high Tc superconducting cuprates during epitaxial film growth. A brief review is given of a number of film characterization techniques which can provide useful information to this end. Based on data from some of these techniques a nucleation model is discussed for the RBa2Cu3Oy (R = Y or rare earth) compound. For growth on TiO2 terminated (100) SrTiO3, their nucleation model suggests a 1:3:3 cation stoichiometry for the c-axis nuclei. Various other substrates are also discussed

  1. Growth and morphology of the epitaxial Fe(110)/MgO(111)/Fe(110) Trilayers

    OpenAIRE

    Fonin, Mikhail; Dedkov, Yuriy S.; Rüdiger, Ulrich; Güntherodt, Gernot

    2007-01-01

    Growth and surface morphology of epitaxial Fe(110)/MgO(111)/Fe(110) trilayers constituting a magnetic tunnel junction were investigated by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). STM reveals a grain-like growth mode of MgO on Fe(110) resulting in dense MgO(111) films at room temperature as well as at 250°C. As observed by STM, initial deposition of MgO leads to a partial oxidation of the Fe(110) surface which is confirmed by Auger electron spectroscopy....

  2. Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    We have grown (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al0.5Ga0.5N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible

  3. Optical properties and structural investigations of (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rosales, Daniel; Gil, Bernard; Bretagnon, Thierry [CNRS, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Université de Montpellier, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Brault, Julien; Vennéguès, Philippe; Nemoz, Maud; Mierry, Philippe de; Damilano, Benjamin; Massies, Jean [CNRS Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, 06560 Valbonne (France); Bigenwald, Pierre [Institut Pascal, Campus des Cézeaux, 24 avenue des Landais, 63171 Aubière Cedex (France)

    2015-07-14

    We have grown (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al{sub 0.5}Ga{sub 0.5}N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible.

  4. Optical second harmonic imaging as a diagnostic tool for monitoring epitaxial oxide thin-film growth

    International Nuclear Information System (INIS)

    Optical second harmonic generation is proposed as a tool for non-invasive, non-destructive, real-time, in-situ imaging of oxide epitaxial film growth. The films can be monitored by surface imaging with a lateral resolution of ≤1 μm on an area of size up to 1 cm2. We demonstrate the potential of the proposed technique by an ex-situ analysis of thin epitaxial SrTiO3 films grown on (1 1 0) NdGaO3 single crystals. Our data show that second harmonic generation provides complementary information to established in-situ monitoring techniques such as reflection high-energy electron diffraction. We demonstrate that this technique can reveal otherwise elusive in-plane inhomogeneities of electrostatic, chemical or structural nature. The presence of such inhomogeneities is independently confirmed by scanning probe microscopy

  5. Epitaxial growth of micrometer-sized Cu-pyramides on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Seyffarth, Susanne; Krebs, Hans-Ulrich [Institut fuer Materialphysik, Universitaet Goettingen (Germany)

    2009-07-01

    Studying the morphology of thin metallic films is very important regarding the properties of these films. Therefore thin Cu films on Si(111) and Si(100) substrates were prepared using pulsed laser deposition (PLD) in ultra high vacuum. At elevated substrate temperatures above 200 C epitaxial growth of three dimensional pyramides with edge lengths of about five micrometers and heights up to 500 nanometers is observed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The base area of these islands is a triangle for Si(111) and a square for Si(100) depending on the orientation of the substrate. Epitaxial relationships with the Si substrates were studied using X-ray diffraction analysis (XRD). Furthermore periodic alignments of the pyramidal islands was achieved. The shape of the pyramidal islands was influenced by alloying Ni during deposition process. Additionally the decomposition of the Cu-islands was examined.

  6. Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

    Directory of Open Access Journals (Sweden)

    Atsushi Sugihara

    2015-06-01

    Full Text Available Mn\\(_3\\Ge has a tetragonal Heusler-like D0\\(_{22}\\ crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn\\(_3\\Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn\\(_3\\Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn\\(_3\\Ge on Rh show somewhat small coercivity (\\(H_{\\rm c}\\ = 12.6 kOe and a large perpendicular magnetic anisotropy (\\(K_{\\rm u}\\ = 11.6 Merg/cm\\(^3\\, comparable to that of the film grown on Cr.

  7. Effects of surface impurities on epitaxial graphene growth

    Science.gov (United States)

    del Campo, Valeria; Henríquez, Ricardo; Häberle, Patricio

    2013-01-01

    The focus of this report is to explore the large scale growth of graphene on Ru(0 0 0 1) and verify the possible effects of crystallographic defects and impurities in the quality of the synthesized material. After a Low Pressure Chemical Vapor Deposition (LP-CVD) process we obtained a graphene film accompanied by other types of graphitic structures. Impurities on the ruthenium surface behaved as nucleation sites in the formation of carbon islands several micrometers wide. The morphological structure of these islands is constituted by carbon discs with diameters in the range of few to several hundred nanometers and thicknesses always below 1 nm.

  8. Spin injection from epitaxial Heusler alloy thin films into InGaAs/GaAs quantum wells

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad

    2006-01-01

    concentration of 2 %, while Ga on Mn-sites are likely to exist with a concentration of 21 %. Epitaxial magnetic Co2MnGa thin films have been grown by molecular beam epitaxy. The reproducibility is approximately within 2 % of the correct stoichiometry. Furthermore epitaxial growth of hetero-structures of Co2Mn...

  9. Oriented Metallic Nano-Objects on Crystalline Surfaces by Solution Epitaxial Growth.

    Science.gov (United States)

    Liakakos, Nikolaos; Achkar, Charbel; Cormary, Benoit; Harmel, Justine; Warot-Fonrose, Bénédicte; Snoeck, Etienne; Chaudret, Bruno; Respaud, Marc; Soulantica, Katerina; Blon, Thomas

    2015-10-27

    Chemical methods offer the possibility to synthesize a large panel of nanostructures of various materials with promising properties. One of the main limitations to a mass market development of nanostructure based devices is the integration at a moderate cost of nano-objects into smart architectures. Here we develop a general approach by adapting the seed-mediated solution phase synthesis of nanocrystals in order to directly grow them on crystalline thin films. Using a Co precursor, single-crystalline Co nanowires are directly grown on metallic films and present different spatial orientations depending on the crystalline symmetry of the film used as a 2D seed for Co nucleation. Using films exposing 6-fold symmetry surfaces such as Pt(111), Au(111), and Co(0001), the Co heterogeneous nucleation and epitaxial growth leads to vertical nanowires self-organized in dense and large scale arrays. On the other hand, using films presenting 4-fold symmetry surfaces such as Pt(001) and Cu(001), the Co growth leads to slanted wires in discrete directions. The generality of the concept is demonstrated with the use of a Fe precursor which results in Fe nanostructures on metallic films with different growth orientations which depend on the 6-fold/4-fold symmetry of the film. This approach of solution epitaxial growth combines the advantages of chemistry in solution in producing shape-controlled and monodisperse metallic nanocrystals, and of seeded growth on an ad hoc metallic film that efficiently controls orientation through epitaxy. It opens attractive opportunities for the integration of nanocrystals in planar devices. PMID:26302309

  10. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    Science.gov (United States)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-02-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50-200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10-50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  11. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

    2015-02-23

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  12. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    International Nuclear Information System (INIS)

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

  13. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

    Science.gov (United States)

    Puybaret, Renaud; Patriarche, Gilles; Jordan, Matthew B.; Sundaram, Suresh; Gmili, Youssef El; Salvestrini, Jean-Paul; Voss, Paul L.; de Heer, Walt A.; Berger, Claire; Ougazzaden, Abdallah

    2016-03-01

    We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5-8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

  14. Fabrication and characterization of silicon nanowires by means of molecular beam epitaxy; Herstellung und Charakterisierung von Silizium-Nanodraehten mittels Molekularstrahlepitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, Luise

    2007-06-19

    In this work, basic processes of silicon whisker growth were examined. For the first time, Si nanowhiskers were produced under UHV conditions by Molecular Beam Epitaxy (MBE) and characterized by different analysis methods afterwards. The existence of Au/Si droplets on a Si(111) substrate surface is a precondition of this growth method. Analyses of the temporal development of the Au/Si droplets during the whisker growth show a decrease of the number of small droplets resp. whiskers during the whisker growth with increasing growth time. This behaviour, i.e. the dissolution of smaller droplets/whiskers and the growth of larger ones in parallel can be explained by Ostwald ripenning. The diffusion-determined material transition of gold, which occurs during this process, is theoretically described by the Lifshitz-Slyozov-Wagner (LSW)-Theory. After this theory only whiskers grow which radii are larger than the critical radius. The whisker radii are temperature dependend whereas analogous whisker radii exist for identical growth times. Electron microscopy analysis show that all whiskers possess a hexagonal but no cylindrical habitus. The planes that form during the growth are crystallographic (111) planes. The growth of Si nanowhiskers under MBE conditions is determined by the Vapour Liquid Solid (VLS) mechanism and by surface diffusion of Si atoms. (orig.)

  15. Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

    Energy Technology Data Exchange (ETDEWEB)

    Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

    2013-09-24

    The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

  16. Atomically thin epitaxial template for organic crystal growth using graphene with controlled surface wettability.

    Science.gov (United States)

    Nguyen, Nguyen Ngan; Jo, Sae Byeok; Lee, Seong Kyu; Sin, Dong Hun; Kang, Boseok; Kim, Hyun Ho; Lee, Hansol; Cho, Kilwon

    2015-04-01

    A two-dimensional epitaxial growth template for organic semiconductors was developed using a new method for transferring clean graphene sheets onto a substrate with controlled surface wettability. The introduction of a sacrificial graphene layer between a patterned polymeric supporting layer and a monolayer graphene sheet enabled the crack-free and residue-free transfer of free-standing monolayer graphene onto arbitrary substrates. The clean graphene template clearly induced the quasi-epitaxial growth of crystalline organic semiconductors with lying-down molecular orientation while maintaining the "wetting transparency", which allowed the transmission of the interaction between organic molecules and the underlying substrate. Consequently, the growth mode and corresponding morphology of the organic semiconductors on graphene templates exhibited distinctive dependence on the substrate hydrophobicity with clear transition from lateral to vertical growth mode on hydrophilic substrates, which originated from the high surface energy of the exposed crystallographic planes of the organic semiconductors on graphene. The optical properties of the pentacene layer, especially the diffusion of the exciton, also showed a strong dependency on the corresponding morphological evolution. Furthermore, the effect of pentacene-substrate interaction was systematically investigated by gradually increasing the number of graphene layers. These results suggested that the combination of a clean graphene surface and a suitable underlying substrate could serve as an atomically thin growth template to engineer the interaction between organic molecules and aromatic graphene network, thereby paving the way for effectively and conveniently tuning the semiconductor layer morphologies in devices prepared using graphene. PMID:25798655

  17. Oxygen pressure dependent VO{sub 2} crystal film preparation and the interfacial epitaxial growth study

    Energy Technology Data Exchange (ETDEWEB)

    Fan, L.L.; Wu, Y.F. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029 (China); Si, C. [Institute of High Energy Physics, Chinese Academy of Science, Beijing, 100049 (China); Zou, C.W., E-mail: czou@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029 (China); Qi, Z.M.; Li, L.B.; Pan, G.Q. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029 (China); Wu, Z.Y., E-mail: wuzy@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029 (China); Institute of High Energy Physics, Chinese Academy of Science, Beijing, 100049 (China)

    2012-07-31

    High quality VO{sub 2} crystal films have been prepared on sapphire substrates by pulsed laser deposition method and the effects of oxygen pressure on the crystal phase structure are investigated. Results indicate that the phases and microstructures of VO{sub 2} films are strongly sensitive to oxygen pressure. High oxygen pressure tends to form coarse B-VO{sub 2} nanocrystals while low pressure favors a flat M1-VO{sub 2} film epitaxial growth. X-ray diffraction {phi}-scan patterns confirm the [020] epitaxial growth orientation of the M1-VO{sub 2} film and the in-plane lattice epitaxial relationship at the interface is also examined. Raman spectra indicate that M1-VO{sub 2} phase has much stronger Raman scattering modes than B-VO{sub 2}, and the clear phonon modes further confirm the idea stoichiometry of VO{sub 2} crystal film. Infrared transmittance spectra as the function of temperature are recorded and the results show that M1-VO{sub 2} crystal films undergo a distinct infrared transmittance variation across metal insulator transition boundary, while B-VO{sub 2} exhibits negligible thermochromic switching properties in the temperature range concerned. The pronounced phase transition behavior of the M1-VO{sub 2} crystal film makes it a promising candidate for optical filter/switch and smart window applications in the future. - Highlights: Black-Right-Pointing-Pointer High quality VO{sub 2} films with different phase structures were obtained by PLD method. Black-Right-Pointing-Pointer High oxygen pressure tends to form B-VO{sub 2} while low pressure favors M1-VO{sub 2} film. Black-Right-Pointing-Pointer {phi}-scan XRD confirms the [020] epitaxial growth orientation of the M1-VO{sub 2} film. Black-Right-Pointing-Pointer The epitaxial relationship is explained based on domain matching theory. Black-Right-Pointing-Pointer M1-VO2 film shows excellent optical property in infrared range.

  18. Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Highlights: • AlN:Cu dilute magnetic semiconductors were successfully prepared by molecular beam epitaxy followed by Cu+ implantation. • Room temperature ferromagnetism was observed after annealing the samples at appropriate temperature. • XRD and Raman spectrometry excluded the possibility of formation of any secondary phases. • By doping intrinsically nonmagnetic dopants (Cu), it has been proved experimentally that their precipitates do not contribute to ferromagnetism. • The reason for ferromagnetism in Cu-doped AlN as observed was explained on the basis of p–d hybridization mechanism (Wu et al.). - Abstract: Diluted magnetic semiconductor (DMS) AlN:Cu films were fabricated by implanting Cu+ ions into AlN thin films at various ion fluxes. AlN films were deposited on c-plane sapphire by molecular beam epitaxy followed by Cu+ ion implantation. The structural and magnetic characterization of the samples was performed through Rutherford backscattering and channeling spectrometry (RBS/C), X-ray diffraction (XRD), Raman spectroscopy, vibrating sample magnetometer (VSM) and SQUID. Incorporation of copper into the AlN lattice was confirmed by RBS, while XRD revealed that no new phase was formed as a result of ion implantation. RBS also indicated formation of defects as a result of implantation process and the depth and degree of damage increased with an increase in ion fluence. Raman spectra showed only E2 (high) and A1 (LO) modes of wurtzite AlN crystal structure and confirmed that no secondary phases were formed. It was found that both Raman modes shift with Cu+ fluences, indicating that Cu ion may go to interstitial or substitutional sites resulting in distortion or damage of lattice. Although as implanted samples showed no magnetization, annealing of the samples resulted in appearance of room temperature ferromagnetism. The saturation magnetization increased with both the annealing temperature as well as with ion fluence. FC/ZFC measurements indicated

  19. Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications

    Science.gov (United States)

    Wenisch, J.; Schirmacher, W.; Wollrab, R.; Eich, D.; Hanna, S.; Breiter, R.; Lutz, H.; Figgemeier, H.

    2015-09-01

    Molecular beam epitaxy (MBE) growth of HgCdTe (MCT) on alternative substrates enables production of both cheaper and more versatile (third-generation) infrared (IR) detectors. After rapid progress in the development of MBE-grown MCT on GaAs in recent years, the question of whether the considerable benefits of this material system are also applicable to high-operating-temperature (HOT) applications demands attention. In this paper, we present a mid-wavelength-IR 640 × 512 pixel, 15- μm-pitch focal-plane array with operability of 99.71% at operating temperature of 120 K and low dark current density. In the second part of the paper, MBE growth of short-wavelength IR material with Cd fraction of up to 0.8 is investigated as the basis for future evaluation of the material for low-light-level imaging HOT applications.

  20. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

    OpenAIRE

    Yu, Ing-Song; Chang, Chun-Pu; Yang, Chung-Pei; Lin, Chun-Ting; Ma, Yuan-Ron; Chen, Chun-Chi

    2014-01-01

    In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 1010 to 1.1 × 1011 cm-2 by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the f...