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Sample records for barrier si detector

  1. Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhuri, S.K.; Krishna, R.M.; Zavalla, K.J. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Mandal, K.C., E-mail: mandalk@cec.sc.edu [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States)

    2013-02-11

    Schottky barrier detectors have been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 360 μm SiC substrates by depositing ∼10 nm nickel contact. Current–voltage (I–V) and capacitance–voltage (C–V) measurements were carried out to investigate the Schottky barrier properties. The detectors were evaluated for alpha particle detection using a {sup 241}Am alpha source. An energy resolution of ∼2.7% was obtained with a reverse bias of 100 V for 5.48 MeV alpha particles. The measured charge collection efficiency (CCE) was seen to vary as a function of bias voltage following a minority carrier diffusion model. Using this model, a diffusion length of∼3.5 μm for holes was numerically calculated from the CCE vs. bias voltage plot. Rise-time measurements of digitally recorded charge pulses for the 5.48 MeV alpha particles showed a presence of two sets of events having different rise-times at a higher bias of 200 V. A biparametric correlation scheme was successfully implemented for the first time to visualize the correlated pulse-height distribution of the events with different rise-times. Using the rise-time measurements and the biparametric plots, the observed variation of energy resolution with applied bias was explained.

  2. External quantum efficiency-enhanced PtSi Schottky-barrier detector utilizing plasmonic ZnO:Al nanoparticles and subwavelength gratings

    Institute of Scientific and Technical Information of China (English)

    Bingxin Kang; Yi Cai; Lingxue Wang

    2016-01-01

    A infrared light trapping structure combining front subwavelength gratings and rear ZnO:Al nanoparticles for a PtSi Schottky-barrier detector over a 3-5 μm waveband is theoretically investigated.By selecting the proper plasmonic material and optimizing the parameters for the proposed structure,the absorption of the PtSi layer is dramatically improved.The theoretical results show that this improvement eventually translates into an equivalent external quantum efficiency (EQE) enhancement of 2.46 times at 3-3.6 μm and 2.38 times at 3.6-5 μm compared to conventional structures.This improvement in the EQE mainly lies in the increase of light path lengths within the PtSi layer by the subwavelength grating diffraction and nanoparticle-scattering effects.

  3. Advanced Si IR detectors using molecular beam epitaxy

    Science.gov (United States)

    Lin, T. L.; Jones, E. W.; George, T.; Ksendzov, A.; Huberman, M. L.

    1991-01-01

    SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

  4. HgCdTe barrier infrared detectors

    Science.gov (United States)

    Kopytko, M.; Rogalski, A.

    2016-05-01

    In the last decade, new strategies to achieve high-operating temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, and multistage (cascade) infrared detectors. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap type-II superlattices is especially helpful in the design of unipolar barriers. This idea has been also implemented in HgCdTe ternary material system. However, the implementation of this detector structure in HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber-barrier interface. In this paper we present status of HgCdTe barrier detectors with emphasis on technological progress in fabrication of MOCVD-grown HgCdTe barrier detectors achieved recently at the Institute of Applied Physics, Military University of Technology. Their performance is comparable with state-of-the-art of HgCdTe photodiodes. From the perspective of device fabrication their important technological advantage results from less stringent surface passivation requirements and tolerance to threading dislocations.

  5. Doping-Spike PtSi Schottky Infrared Detectors with Extended Cutoff Wavelengths

    Science.gov (United States)

    Lin, T. L.; Park, J. S.; Gunapala, S. D.; Jones, E. W.; Castillo, H. M. Del

    1994-01-01

    A technique incorporating a p+ doping spike at the silicide/Si interface to reduce the effective Schottky barrier of the silicide infrared detectors and thus extend the cutoff wavelength has been developed.

  6. New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

    Directory of Open Access Journals (Sweden)

    V. G. Ivanov

    2011-01-01

    Full Text Available The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection—“quantum” and hot electrons gas emission—has allowed the creation of a superwideband IR detector using standard silicon technology.

  7. Highly sensitive NIR PtSi/Si-nanostructure detectors

    Science.gov (United States)

    Li, Hua-gao; Guo, Pei; Yuan, An-bo; Long, Fei; Li, Rui-zhi; Li, Ping; Li, Yi

    2016-10-01

    We report a high external quantum efficiency (EQE) photodiode detector with PtSi/Si-nanostructures. Black silicon nanostructures were fabricated by metal-assist chemical etching (MCE), a 2 nm Pt layer was subsequently deposited on black silicon surface by DC magnetron sputtering system, and PtSi/Si-nanostructures were formed in vacuum annealing at 450 oC for 5 min. As the PtSi/Si-nanostructures presented a spiky shape, the absorption of incident light was remarkably enhanced for the repeat reflection and absorption. The breakdown voltage, dark current, threshold voltage and responsivity of the device were investigated to evaluate the performance of the PtSi/Si-nanostructures detector. The threshold voltage and dark currents of the PtSi/Si-nanostructure photodiode tends to be slightly higher than those of the standard diodes. The breakdown voltage remarkably was reduced because of existing avalanche breakdown in PtSi/Si-nanostructures. However, the photodiodes had high response at room temperature in near infrared region. At -5 V reverse bias voltage, the responsivity was 0.72 A/W in 1064 nm wavelength, and the EQE was 83.9%. By increasing the reverse bias voltage, the responsivity increased. At -60 V reverse bias voltage, the responsivity was 3.5 A/W, and the EQE was 407.5%, which means the quantum efficiency of PtSi/Si-nanostructure photodiodes was about 10 times higher than that of a standard diode. Future research includes how to apply this technology to enhance the NIR sensitivity of image sensors, such as Charge Coupled Devices (CCD).

  8. Schottky Barrier CdTe(Cl) Detectors for Planetary Missions

    Science.gov (United States)

    Eisen, Yosef; Floyd, Samuel

    2002-10-01

    Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm × 2mm × 1mm and segmented monolithic 3cm × 3 cm × 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm × 2mm × 1mm CdTe operating at -30°C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm × 3cm × 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed.

  9. Development of dual-band barrier detectors

    Science.gov (United States)

    Plis, Elena; Myers, Stephen A.; Ramirez, David A.; Krishna, Sanjay

    2016-05-01

    We report on the development of dual-band InAs/GaSb type-II strained layer superlattices (T2SL) detectors with barrier designs at SK Infrared. Over the past five years, we demonstrated mid-wave/long-wave (MW/LWIR, cut-off wavelengths are 5 μm and 10.0 μm), and LW/LWIR (cut-off wavelengths are 9 μm and 11.0 μm) detectors with nBn and pBp designs. Recent results include a high performance bias-selectable long/long-wavelength infrared photodetector based on T2SL with a pBp barrier architecture. The two channels 50% cut-off wavelengths were ~ 9.2 μm and ~ 12 μm at 77 K. The "blue" and "red" LWIR absorbers demonstrated saturated QE values of 34 % and 28 %, respectively, measured in a backside illuminated configuration with a ~ 35 μm thick layer of residual GaSb substrate. Bulk-limited dark current levels were ~ 2.6 x 10-7 A/cm2 at + 100 mV and ~ 8.3 x 10-4 A/cm2 at - 200 mV for the "blue" and "red" channels, respectively.

  10. Application of pulse shape discrimination in Si detector for fission fragment angular distribution measurements

    Indian Academy of Sciences (India)

    B K Nayak; E T Mirgule; R K Choudhury

    2005-12-01

    Pulse shape discrimination (PSD) with totally depleted transmission type Si surface barrier detector in reverse mount has been investigated to identify fission fragments in the presence of elastic background in heavy ion-induced fission reactions by both numerical simulation and experimental studies. The PSD method is compared with the other conventional methods adopted to identify fission fragments with solid-state detectors such as - telescope and single thin detector and the data for the 10B + 232Th fission reaction are presented. Results demonstrate the usefulness of a single transmission-type surface barrier detector for the identification of fission fragments and projectiles like heavy ions.

  11. Effect of Si/Si1-yCy/Si Barriers on the Characteristics of Si1-xGex/Si Resonant Tunneling Structures

    Institute of Scientific and Technical Information of China (English)

    HAN Ping; CHENG Xue-Mei; Masao Sakuraba; YoungCheon Jeong; Takashi Matsuura; Junichi Murota

    2000-01-01

    P-type double barrier resonant tunneling diodes (RTD) with the single Si0.6Ge0.4 quantum well and double Si0.6 Ge0.4 spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si1-yCy layer on the characteristics of the devices was shown by comparing the current-voltage (Ⅰ-Ⅴ) characteristics of RTD's of the barriers of Si layers with that of Si/Si1-yCy/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/Si1-yCy/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/Si1-yCy/Si barriers. The possible mechanism for the observed Ⅰ-Ⅴcharacteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si1-yCy layers in the Si/Si1-yCy/Si barriers.

  12. Study of point ldefect detectors in Si

    Institute of Scientific and Technical Information of China (English)

    SHENDingyu; CHENJian; 等

    1999-01-01

    The importance of point defects in semiconductor and function materials has been studied in detail.but effective means for detecting point defects has not been available for a long time.The end of range defects in Si,produced by 140keV Ge+ implantation,were investigated as detectors for measuring the interstitial concentration created by 42keV B+ implantation.The concentration of interstitial resulting from the B+ implantation and the behavior of the interstitial flux under different annealing condition were given.The enhanced diffusion in the boron doped EPI marker,resulting from mobile non-equilibrium interstitials was demonstrated to be transient.Interstitial fluxes arising from processing can be detected by tansient enhanced diffusion(TED) of doped marker layers as well.

  13. Advanced Environmental Barrier Coatings Development for Si-Based Ceramics

    Science.gov (United States)

    Zhu, Dong-Ming; Choi, R. Sung; Robinson, Raymond C.; Lee, Kang N.; Bhatt, Ramakrishna T.; Miller, Robert A.

    2005-01-01

    Advanced environmental barrier coating concepts based on multi-component HfO2 (ZrO2) and modified mullite systems are developed for monolithic Si3N4 and SiC/SiC ceramic matrix composite (CMC) applications. Comprehensive testing approaches were established using the water vapor cyclic furnace, high pressure burner rig and laser heat flux steam rig to evaluate the coating water vapor stability, cyclic durability, radiation and erosion resistance under simulated engine environments. Test results demonstrated the feasibility and durability of the environmental barrier coating systems for 2700 to 3000 F monolithic Si3N4 and SiC/SiC CMC component applications. The high-temperature-capable environmental barrier coating systems are being further developed and optimized in collaboration with engine companies for advanced turbine engine applications.

  14. Complementary Barrier Infrared Detector (CBIRD) with Double Tunnel Junction Contact and Quantum Dot Barrier Infrared Detector (QD-BIRD)

    Science.gov (United States)

    Ting, David Z.-Y; Soibel, Alexander; Khoshakhlagh, Arezou; Keo, Sam A.; Nguyen, Jean; Hoglund, Linda; Mumolo, Jason M.; Liu, John K.; Rafol, Sir B.; Hill, Cory J.; Gunapala, Sarath D.

    2012-01-01

    The InAs/GaSb type-II superlattice based complementary barrier infrared detector (CBIRD) has already demonstrated very good performance in long-wavelength infrared (LWIR) detection. In this work, we describe results on a modified CBIRD device that incorporates a double tunnel junction contact designed for robust device and focal plane array processing. The new device also exhibited reduced turn-on voltage. We also report results on the quantum dot barrier infrared detector (QD-BIRD). By incorporating self-assembled InSb quantum dots into the InAsSb absorber of the standard nBn detector structure, the QD-BIRD extend the detector cutoff wavelength from approximately 4.2 micrometers to 6 micrometers, allowing the coverage of the mid-wavelength infrared (MWIR) transmission window. The device has been observed to show infrared response at 225 K.

  15. Compton imaging with thick Si and CZT detectors

    Energy Technology Data Exchange (ETDEWEB)

    Subramanian, Mythili, E-mail: mythili.subramanian@gmail.com [George Mason University, 4400 University Dr., Fairfax, VA 22030 (United States); Wulf, Eric A.; Phlips, Bernard [U S Naval Research Lab, 4555 Overlook Ave SW, Washington DC 20375 (United States); Krawczynski, Henric; Martin, Jerrad; Dowknott, Paul [Washington University at St. Louis, St. Louis. MO (United States)

    2012-08-01

    A Compton imaging telescope has been constructed using a 0.2 cm thick Silicon (Si) detector of active area 9.0 Multiplication-Sign 9.0 cm{sup 2} and a pixelated Cadmium Zinc Telluride (CZT) detector of dimensions 2.0 Multiplication-Sign 2.0 Multiplication-Sign 0.5 cm{sup 3}. The Si detector is double sided with 64 strips per side in two orthogonal directions. The CZT detector has 64 pixels of pitch 0.25 cm. We used several ASICs (32 channel) to read out both detectors. A {sup 137}Cs source was used in the study. The energy deposited in the Si and CZT detectors and the points of interaction of the {gamma}-ray in both detectors were read out. We varied the position of the source as well as the vertical separation between the Si and CZT detectors and measured the angular resolution of the source image for the different configurations. The best angular resolution (1{sigma}) was 2.4 Degree-Sign . Monte Carlo simulations were run for similar detector configurations and agree with the experimental results.

  16. Fusion of Si28+Si28,30: Different trends at sub-barrier energies

    Science.gov (United States)

    Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Jiang, C. L.; Corradi, L.; Courtin, S.; Fioretto, E.; Grebosz, J.; Haas, F.; Jia, H. M.; Mazzocco, M.; Michelagnoli, C.; Mijatović, T.; Montanari, D.; Parascandolo, C.; Scarlassara, F.; Strano, E.; Szilner, S.; Torresi, D.

    2014-10-01

    Background: The fusion excitation function of the system Si28+Si28 at energies near and below the Coulomb barrier is known only down to ≃15 mb. This precludes any information on both coupling effects on sub-barrier cross sections and the possible appearance of hindrance. For Si28+Si30 even if the fusion cross section is measured down to ≃50 μb, the evidence of hindrance is marginal. Both systems have positive fusion Q values. While Si28 has a deformed oblate shape, Si30 is spherical. Purpose: We investigate 1. the possible influence of the different structure of the two Si isotopes on the fusion excitation functions in the deep sub-barrier region and 2. whether hindrance exists in the Si+Si systems and whether it is strong enough to generate an S-factor maximum, thus allowing a comparison with lighter heavy-ion systems of astrophysical interest. Methods: Si28 beams from the XTU Tandem accelerator of the INFN Laboratori Nazionali di Legnaro were used. The setup was based on an electrostatic beam separator, and fusion evaporation residues (ER) were detected at very forward angles. Angular distributions of ER were measured. Results: Fusion cross sections of Si28+Si28 have been obtained down to ≃600 nb. The slope of the excitation function has a clear irregularity below the barrier, but no indication of a S-factor maximum is found. For Si28+Si30 the previous data have been confirmed and two smaller cross sections have been measured down to ≃4 μb. The trend of the S-factor reinforces the previous weak evidence of hindrance. Conclusions: The sub-barrier cross sections for Si28+Si28 are overestimated by coupled-channels calculations based on a standard Woods-Saxon potential, except for the lowest energies. Calculations using the M3Y+repulsion potential are adjusted to fit the Si28+Si28 and the existing Si30+Si30 data. An additional weak imaginary potential (probably simulating the effect of the oblate Si28 deformation) is required to fit the low-energy trend of

  17. Si:As BIB detector arrays

    Science.gov (United States)

    Bharat, R.; Petroff, M. D.; Speer, J. J.; Stapelbroek, M. G.

    1986-01-01

    Highlights of the results obtained on arsenic-doped silicon blocked impurity band (BIB) detectors and arrays since the invention of the BIB concept a few years ago are presented. After a brief introduction and a description of the BIB concept, data will be given on single detector performance. Then different arrays that were fabricated will be described and test data presented.

  18. Surface Leakage Mechanisms in III-V Infrared Barrier Detectors

    Science.gov (United States)

    Sidor, D. E.; Savich, G. R.; Wicks, G. W.

    2016-09-01

    Infrared detector epitaxial structures employing unipolar barriers exhibit greatly reduced dark currents compared to simple pn-based structures. When correctly positioned within the structure, unipolar barriers are highly effective at blocking bulk dark current mechanisms. Unipolar barriers are also effective at suppressing surface leakage current in infrared detector structures employing absorbing layers that possess the same conductivity type in their bulk and at their surface. When an absorbing layer possesses opposite conductivity types in its bulk and at its surface, unipolar barriers are not solutions to surface leakage. This work reviews empirically determined surface band alignments of III-V semiconductor compounds and modeled surface band alignments of both gallium-free and gallium-containing type-II strained layer superlattice material systems. Surface band alignments are used to predict surface conductivity types in several detector structures, and the relationship between surface and bulk conductivity types in the absorbing layers of these structures is used as the basis for explaining observed surface leakage characteristics.

  19. Improving detector spatial resolution using pixelated scintillators with a barrier rib structure

    Science.gov (United States)

    Liu, Langechuan; Lu, Minghui; Cao, Wanqing; Peng, Luke; Chen, Arthur

    2016-03-01

    Indirect conversion flat panel detectors (FPDs) based on amorphous silicon (a-Si) technology are widely used in digital X-ray imaging. In such FPDs a scintillator layer is used for converting X-rays into visible light photons. However, the lateral spread of these photons inside the scintillator layer reduces spatial resolution of the FPD. In this study, FPDs incorporating pixelated scintillators with a barrier rib structure were developed to limit lateral spread of light photons thereby improving spatial resolution. For the pixelated scintillator, a two-dimensional barrier rib structure was first manufactured on a substrate layer, coated with reflective materials, and filled to the rim with the scintillating material of gadolinium oxysulfide (GOS). Several scintillator samples were fabricated, with pitch size varying from 160 to 280 μm and rib height from 200 to 280 μm. The samples were directly coupled to an a-Si flat panel photodiode array with a pitch of 200 μm to convert optical photons to electronic signals. With the pixelated scintillator, the detector modulation transfer function was shown to improve significantly (by 94% at 2 cycle/mm) compared to a detector using an unstructured GOS layer. However, the prototype does show lower sensitivity due to the decrease in scintillator fill factor. The preliminary results demonstrated the feasibility of using the barrier-rib structure to improve the spatial resolution of FPDs. Such an improvement would greatly benefit nondestructive testing applications where the spatial resolution is the most important parameter. Further investigation will focus on improving the detector sensitivity and exploring its medical applications.

  20. Advanced Environmental Barrier Coatings Developed for SiC/SiC Composite Vanes

    Science.gov (United States)

    Lee, Kang N.; Fox, Dennis S.; Eldridge, Jeffrey I.; Zhu, Dongming; Bansal, Narottam P.; Miller, Robert A.

    2003-01-01

    Ceramic components exhibit superior high-temperature strength and durability over conventional component materials in use today, signifying the potential to revolutionize gas turbine engine component technology. Silicon-carbide fiber-reinforced silicon carbide ceramic matrix composites (SiC/SiC CMCs) are prime candidates for the ceramic hotsection components of next-generation gas turbine engines. A key barrier to the realization of SiC/SiC CMC hot-section components is the environmental degradation of SiC/SiC CMCs in combustion environments. This is in the form of surface recession due to the volatilization of silica scale by water vapor. An external environmental barrier coating (EBC) is a logical approach to achieve protection and long-term durability.

  1. Advanced Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: NASA's Perspectives

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    This presentation reviews NASA environmental barrier coating (EBC) system development programs and the coating materials evolutions for protecting the SiC/SiC Ceramic Matrix Composites in order to meet the next generation engine performance requirements. The presentation focuses on several generations of NASA EBC systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. The current EBC development emphasis is placed on advanced NASA 2700F candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance are described. The research and development opportunities for advanced turbine airfoil environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling are discussed.

  2. InGaAs Schottky barrier diode array detector for a real-time compact terahertz line scanner.

    Science.gov (United States)

    Han, Sang-Pil; Ko, Hyunsung; Park, Jeong-Woo; Kim, Namje; Yoon, Young-Jong; Shin, Jun-Hwan; Kim, Dae Yong; Lee, Dong Hun; Park, Kyung Hyun

    2013-11-04

    We present a terahertz (THz) broadband antenna-integrated 1 × 20 InGaAs Schottky barrier diode (SBD) array detector with an average responsivity of 98.5 V/W at a frequency of 250 GHz, which is measured without attaching external amplifiers and Si lenses, and an average noise equivalent power (NEP) of 106.6 pW/√Hz. The 3-dB bandwidth of the SBD detector is also investigated at approximately 180 GHz. For implementing an array-type SBD detector by a simple fabrication process to achieve a high yield, a structure comprising an SiN(x) layer instead of an air bridge between the anode and the cathode is designed. THz line beam imaging using a Gunn diode emitter with a center frequency of 250 GHz and a 1 × 20 SBD array detector is successfully demonstrated.

  3. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zheng; Chen, Wei

    2016-07-05

    A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

  4. Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

    Science.gov (United States)

    Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

    2017-04-01

    Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

  5. Detection Simulation of SiC Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hong Yeop; Kim, Jeong Dong; Lee, Yong Deok; Kim, Ho Dong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-10-15

    In a high radiation environment, it has received attention as a material for detecting radiation (neutron). As the field of application of a SIC neutron detector, the semiconductor detector used in cosmic rays was proposed by Ruddy. Recently, X-ray and low-energy gamma ray spectrometry with SiC detectors has been reported. Its usability has recently been being proved in neutron dose surveillance in BNCT (Boron-Capture Neutron Therapy), thermal neutron detection in a waste drum, nuclear material surveillance, and fast neutron detection. In addition, in 2006, an experiment was actually performed by Natsume on spent nuclear fuel. SIC is suitable for radiation surveillance in a complex radiation field emitted from spent nuclear fuel and the pyropocess process. In the radiation field of spent nuclear fuel, neutrons and gamma rays are generated. In this research, the performance of a SiC detector made at KAERI was evaluated to obtain a discriminated neutron signal. First, using neutron ({sup 252}Cf), alpha ({sup 241}Am), and gamma ({sup 60}Co) sources, a SiC semi- conductor detector was tested. The energy spectrum in a complex radiation field was simulated using the MCNPX 2.5. Finally, the experimental results by Ruddy were compared with the simulation results. Research result, whether the SiC semiconductor detector operating or not was confirmed through the simulation according to the neutron, gamma. The simulation results were similar to those of Ruddy. A further study is underway to investigate the discriminated neutron signal of a complex radiation field.

  6. The SiD Detector for the International Linear Collider

    CERN Document Server

    ,

    2015-01-01

    The SiD Detector is one of two validated detector designs for the future International Linear Collider. SiD features a compact, cost-constrained design for precision Higgs couplings determination, and other measurements, and sensitivity to a wide range of possible new phenomena. A robust silicon vertex and tracking system, combined with a 5 Tesla central solenoidal field, provides excellent momentum resolution. The highly granular calorimeter system is optimized for Particle Flow application to achieve very good jet energy resolution over a wide range of energies. Details of the proposed implementation of the SiD subsystems, as driven by the physics requirements, will be given. The shared interaction point, push-pull mechanism, will be described, together with the estimated timeline for construction.

  7. HREM study on stacking structure of SiGe/Si infrared detector

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Stacking structure and defects in SiGe/P-Si infrared detector were studied by using localization high resolutionelectron microscopy (HREM). The photosensitive region in the detector consists of 3 P+-Si0.65 Ge0.35 layers and 2 UD-Si(undoped Si) layers. The interface between Si0.65 Ge0.35 and UD-Si is not sharp and has a transition zone with non-uniform contrast. The misfit stress of interface is distributed gradiently along the normal direction of the interface. Thereforethe crystal defects and serious lattice deformations on the interface have not been found. A defect area with a shape of in-verted triangle exists in the edge of photosensitive region. The main types of the defects in the area are stacking faults andmicrotwins. The stacking faults are on ( 1 11), and the thickness of the most microtwins is less than 4 interplanar spacingand the twin plane is (111). The Si0.65Ge0.35 and UD-Si layers on amorphous SiO2 layer consist of polycrystals grown byrandom nueleation, and are in wave

  8. Study of point defect detectors in Si

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    The importance of point defects in semiconductor and functionmaterials has been studied indetail, but effective means for detecting point defects has not been available for a long time.Theend of range defects in Si, produced by 140 keV Ge+ implantation,were investigated as detectorsfor measuring the interstitial concentration created by 42 keV B+ implantation.The concentrationof interstitial resulting from the B+ implantation and the behaviorof the interstitial flux underdifferent annealing condition were given. The enhanced diffusion in the borondoped EPI marker,resulting from mobile non-equilibrium interstitials wasdemonstrated to be transient. Interstitialfluxes arising from processing can be detected bytransient enhanced diffusion (TED) of dopedmarker layers as well.

  9. Advanced Environmental Barrier Coating Development for SiC-SiC Ceramic Matrix Composite Components

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan; Bhatt, Ramakrishna; Kiser, Doug; Wiesner, Valerie L.

    2016-01-01

    This presentation reviews the NASA advanced environmental barrier coating (EBC) system development for SiCSiC Ceramic Matrix Composite (CMC) components for next generation turbine engines. The emphasis has been placed on the current design challenges of the 2700F environmental barrier coatings; coating processing and integration with SiCSiC CMCs and component systems; and performance evaluation and demonstration of EBC-CMC systems. This presentation also highlights the EBC-CMC system temperature capability and durability improvements through advanced compositions and architecture designs, as shown in recent simulated engine high heat flux, combustion environment, in conjunction with mechanical creep and fatigue loading testing conditions.

  10. Detector production for the R3B Si-tracker

    Science.gov (United States)

    Borri, M.; Lemmon, R.; Thornhill, J.; Bate, R.; Chartier, M.; Clague, N.; Herzberg, R.-D.; Labiche, M.; Lindsay, S.; Nolan, P.; Pearce, F.; Powell, W.; Wells, D.

    2016-11-01

    R3B is a fixed target experiment which will study reactions with relativistic radioactive beams at FAIR. Its Si-tracker will surround the target volume and it will detect light charged-particles like protons. The detector technology in use consists of double-sided silicon strip sensors wire bonded to the custom made R3B-ASIC. The tracker allows for a maximum of two outer layers and one inner layer. This paper reports on the production of detectors necessary to build the minimum tracking configuration: one inner layer and one outer layer.

  11. Imaging with SiPMs in noble-gas detectors

    CERN Document Server

    Yahlali, N; González, K; Garcia, A N C; Soriano, A

    2012-01-01

    Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive photosensors for imaging but they are insensitive to the VUV scintillation emitted by the noble gases (xenon and argon). This difficulty is overcome in the NEXT experiment by coating the SiPMs with tetraphenyl butadiene (TPB) to convert the VUV light into visible light. TPB requires stringent storage and operational conditions to prevent its degradation by environmental agents. The development of UV sensitive SiPMs is thus of utmost interest for experiments using UV light and for noble-gas detectors. It is in particular an important issue for a robust and background free neutrinoless double-beta decay experiment with xenon gas aimed by NEXT. The photon detection efficiency (PDE) of UV-enhanced SiPMs without protective window and with silicon resin window provided by Hamamatsu was det...

  12. Cryogenic Si detectors for ultra radiation hardness in SLHC environment

    Science.gov (United States)

    Li, Zheng; Abreu, M.; Anbinderis, P.; Anbinderis, T.; Ambrosio, N. D.'.; de Boer, W.; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chen, W.; Cindro, V.; Dierlamm, A.; Eremin, V.; Gaubas, E.; Gorbatenko, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Härkönen, J.; Ilyashenko, I.; Janos, S.; Jungermann, L.; Kalesinskas, V.; Kapturauskas, J.; Laiho, R.; Luukka, P.; Mandic, I.; De Masi, Rita; Menichelli, D.; Mikuz, M.; Militaru, O.; Niinikosky, T. O.; Shea, V. O.'.; Pagano, S.; Paul, S.; Piotrzkowski, K.; Pretzl, K.; Rato Mendes, P.; Rouby, X.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Tuominen, E.; Tuovinen, E.; Verbitskaya, E.; Vaitkus, J.; Wobst, E.; Zavrtanik, M.

    2007-09-01

    Radiation hardness up to 10 16 neq/cm 2 is required in the future HEP experiments for most inner detectors. However, 10 16 neq/cm 2 fluence is well beyond the radiation tolerance of even the most advanced semiconductor detectors fabricated by commonly adopted technologies: the carrier trapping will limit the charge collection depth to an effective range of 20-30 μm regardless of depletion depth. Significant improvement of the radiation hardness of silicon sensors has been taken place within RD39. Fortunately the cryogenic tool we have been using provides us a convenient way to solve the detector charge collection efficiency (CCE) problem at SLHC radiation level (10 16 neq/cm 2). There are two key approaches in our efforts: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (⩽230 K); and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the LN 2 temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures. In this approach, we intend to study the trapping effect at temperatures below LN 2 temperature. A freeze-out of trapping can certainly help in the development of ultra-radiation hard Si detectors for SLHC. A detector CCE measurement system using ultra-fast picosecond laser with a He cryostat has been built at CERN. This system can be used to find out the practical cryogenic temperature range that can be used to freeze out the

  13. Cryogenic Si detectors for ultra radiation hardness in SLHC environment

    Energy Technology Data Exchange (ETDEWEB)

    Li Zheng [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Abreu, M. [LIP, Av. E. Garcia, P-1000 Lisbon (Portugal); Anbinderis, P.; Anbinderis, T. [University of Vilnius, Institute of Materials Science and Applied Research, 2040 Vilnius (Lithuania); Ambrosio, N.D' . [Instiuto di Cibernetica ' E. Caianiello' , 80078 Pozzuoli (Italy); Boer, W. de [IEKP University of Karlsruhe, D-76128 Karlsruhe (Germany); Borchi, E. [Dipartimento di Energetica, Universita di Firenze, I-50139 Florence (Italy); Borer, K. [Laboratorium fuer Hochenergiephysik der Universitaet Bern, Sidlerstarsse 5, CH-3012 Bern (Switzerland); Bruzzi, M. [Dipartimento di Energetica, Universita di Firenze, I-50139 Firenze (Italy); Buontempo, S. [Instiuto di Cibernetica ' E. Caianiello' , 80078 Pozzuoli (Italy); Chen, W. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Cindro, V. [Jozef Stefan Institute, Exp. Particle Physics Department, PO. Box 3000, 1001 Ljubljana (Slovenia); Dierlamm, A. [IEKP University of Karlsruhe, D-76128 Karlsruhe (Germany); Eremin, V. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Gaubas, E.; Gorbatenko, V. [University of Vilnius, Institute of Materials Science and Applied Research, 2040 Vilnius (Lithuania); Grigoriev, E. [IEKP University of Karlsruhe, D-76128 Karlsruhe (Germany); Department de Radiologie, Universite de Geneve, CH-1211 Geneva (Switzerland); Hauler, F. [IEKP University of Karlsruhe, D-76128 Karlsruhe (Germany); Heijne, E. [CERN, CH-1211 Geneva (Switzerland); Heising, S. [IEKP University of Karlsruhe, D-76128 Karlsruhe (Germany)] (and others)

    2007-09-01

    Radiation hardness up to 10{sup 16} n{sub eq}/cm{sup 2} is required in the future HEP experiments for most inner detectors. However, 10{sup 16} n{sub eq}/cm{sup 2} fluence is well beyond the radiation tolerance of even the most advanced semiconductor detectors fabricated by commonly adopted technologies: the carrier trapping will limit the charge collection depth to an effective range of 20-30 {mu}m regardless of depletion depth. Significant improvement of the radiation hardness of silicon sensors has been taken place within RD39. Fortunately the cryogenic tool we have been using provides us a convenient way to solve the detector charge collection efficiency (CCE) problem at SLHC radiation level (10{sup 16} n{sub eq}/cm{sup 2}). There are two key approaches in our efforts: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range ({<=}230 K); and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the LN{sub 2} temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures. In this approach, we intend to study the trapping effect at temperatures below LN{sub 2} temperature. A freeze-out of trapping can certainly help in the development of ultra-radiation hard Si detectors for SLHC. A detector CCE measurement system using ultra-fast picosecond laser with a He cryostat has been built at CERN. This system can be used to find out the practical

  14. Response function of semiconductor detectors, Ge and Si(Li); Funcao resposta de detectores semicondutores, Ge e Si(Li)

    Energy Technology Data Exchange (ETDEWEB)

    Zevallos Chavez, Juan Yury

    2003-07-01

    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm{sup 3} , 50 cm{sup 3} , 8 cm{sup 3} and 5 cm{sup 3}, and one Si(Li) with 0.143 cm{sup 3} of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  15. Performance of bulk SiC radiation detectors

    CERN Document Server

    Cunningham, W; Lamb, G; Scott, J; Mathieson, K; Roy, P; Bates, R; Thornton, P; Smith, K M; Cusco, R; Glaser, M; Rahman, M

    2002-01-01

    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I-V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for alpha radiation. By measuring ...

  16. Property Evaluation and Damage Evolution of Environmental Barrier Coatings and Environmental Barrier Coated SiC/SiC Ceramic Matrix Composite Sub-Elements

    Science.gov (United States)

    Zhu, Dongming; Halbig, Michael; Jaskowiak, Martha; Hurst, Janet; Bhatt, Ram; Fox, Dennis S.

    2014-01-01

    This paper describes recent development of environmental barrier coatings on SiC/SiC ceramic matrix composites. The creep and fatigue behavior at aggressive long-term high temperature conditions have been evaluated and highlighted. Thermal conductivity and high thermal gradient cyclic durability of environmental barrier coatings have been evaluated. The damage accumulation and complex stress-strain behavior environmental barrier coatings on SiCSiC ceramic matrix composite turbine airfoil subelements during the thermal cyclic and fatigue testing of have been also reported.

  17. Creep Behavior of Hafnia and Ytterbium Silicate Environmental Barrier Coating Systems on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Fox, Dennis S.; Ghosn, Louis J.; Harder, Bryan

    2011-01-01

    Environmental barrier coatings will play a crucial role in future advanced gas turbine engines because of their ability to significantly extend the temperature capability and stability of SiC/SiC ceramic matrix composite (CMC) engine components, thus improving the engine performance. In order to develop high performance, robust coating systems for engine components, appropriate test approaches simulating operating temperature gradient and stress environments for evaluating the critical coating properties must be established. In this paper, thermal gradient mechanical testing approaches for evaluating creep and fatigue behavior of environmental barrier coated SiC/SiC CMC systems will be described. The creep and fatigue behavior of Hafnia and ytterbium silicate environmental barrier coatings on SiC/SiC CMC systems will be reported in simulated environmental exposure conditions. The coating failure mechanisms will also be discussed under the heat flux and stress conditions.

  18. Phase Stability and Thermal Conductivity of Composite Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Benkel, Samantha; Zhu, Dongming

    2011-01-01

    Advanced environmental barrier coatings are being developed to protect SiC/SiC ceramic matrix composites in harsh combustion environments. The current coating development emphasis has been placed on the significantly improved cyclic durability and combustion environment stability in high-heat-flux and high velocity gas turbine engine environments. Environmental barrier coating systems based on hafnia (HfO2) and ytterbium silicate, HfO2-Si nano-composite bond coat systems have been processed and their stability and thermal conductivity behavior have been evaluated in simulated turbine environments. The incorporation of Silicon Carbide Nanotubes (SiCNT) into high stability (HfO2) and/or HfO2-silicon composite bond coats, along with ZrO2, HfO2 and rare earth silicate composite top coat systems, showed promise as excellent environmental barriers to protect the SiC/SiC ceramic matrix composites.

  19. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    Science.gov (United States)

    Golshani, Negin; Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R.

    2014-10-01

    In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N2, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  20. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    Energy Technology Data Exchange (ETDEWEB)

    Golshani, Negin, E-mail: negingolshani@gmail.com; Mohammadi, V.; Schellevis, H.; Beenakker, C. I. M.; Ishihara, R. [ECTM, DIMES, Faculty of Electrical Engineering (EWI), Delft University of Technology (TU Delft), Feldmannweg 17, P.O. Box 5053, 2628 CT Delft (Netherlands)

    2014-10-01

    In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N{sub 2}, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  1. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    Directory of Open Access Journals (Sweden)

    Negin Golshani

    2014-10-01

    Full Text Available In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN layer deposited by reactive sputtering in a mixture of Ar/N2, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  2. Impact Resistance of Environmental Barrier Coated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Impact performance of 2D woven SiC/SiC composites coated with 225 and 525 microns thick environmental barrier coating (EBC) was investigated. The composites were fabricated by melt infiltration and the EBC was deposited by plasma spray. Impact tests were conducted at room temperature and at 1316 C in air using 1.59 mm diameter steel-balls at projectile velocities ranging from 110 to 375 m/s . Both microscopy and non-destructive evaluation (NDE) methods were used to determine the extent of damage in the substrate and coating with increasing projectile velocity. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. At projectile velocities less than 125 m/s , no detectable internal damage was noticed in the MI SiC/SiC composites coated with 525 microns EBC. With increase in projectile velocity beyond this value, spallation of EBC layers, delamination of fiber plies, and fiber fracture were detected. At a fixed projectile velocity, the composites coated with 525 microns EBC showed less damage than those coated with 225 microns EBC. Both types of coated composites retained a large fraction of the baseline properties of the as-fabricated composites and exhibited non-brittle failure after impact testing. Furnace exposure of impacted specimens in a moisture environment at 1316 C for 500 h indicated that the through-the-thickness cracks in the coating and delamination cracks in the substrate generated after impact testing acted as conduits for internal oxidation.

  3. Charge collection efficiency mapping of interdigitated 4H-SiC detectors

    CERN Document Server

    Vittone, E; Pastuovic, Z; Olivero, P; Jaksic, M

    2016-01-01

    The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent consistency between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.

  4. On the suitability of Peltier cooled Si-PIN detectors in transmission experiments

    Energy Technology Data Exchange (ETDEWEB)

    Murty, V.R.K. E-mail: murtyvrk@mopipi.ub.bw; Devan, K.R.S

    2001-06-01

    The performance of a Peltier cooled Si-PIN detector is compared with that for a Freolectric cooled Si(Li) detector, references being made to transmission experiments that evaluate total cross sections at low photon energies. The results of these measurements are discussed. (author)

  5. First large scale application of novel Si stripixel detector in real large experiment: Si VTX in PHENIX upgrade at RHIC

    Institute of Scientific and Technical Information of China (English)

    LI Zheng; H. ENYO; Y. GOTO; J. TOJO; Y. AKIBA; R. NOUICER; A. L. DESHPANDE; K. BOYLE; V. CIANCIOLO

    2006-01-01

    2D position sensitive,single-sided Si stripixel detector was selected as the one of the two main components of the Si vertex tracker (Si SVX) in the upgraded PHENIX detector at RHIC (relativistic heavy ion collider) in Brookhaven National Laboratory (BNL). This is the first large scale application of the novel Si stripixel detector in a real large experiment after many years of research and development at BNL. The first and second prototype fabrication runs of the SVX stripixel detectors were carried out successfully in BNL's Si detector development and processing Lab. The processing of these stripixel detectors is similar to that for the standard single-sided strip detectors: one-sided processing,single implant for the pixel (strip) electrodes,etc. The only additional processing step is the double metal process,a technology that is simple and well matured by many Si detector processing industries and labs,including BNL. The laser and beam tests on those prototype detectors show the 2D position sensitivity and good position resolution in both X and U coordinates (about 25 μm for 80 μm pitch). For the mass production of 400 sensors needed for the Si SVX,the processing technology has been successfully transferred to the industrial: Hamamatsu Photonics (HPK). HPK has produced a pre-production run of stripixel sensors with the full PHENIX SVX specification on 150 mm diameter wafers. The laser tests on these pre-production wafers show good signal to noise ratio (about 20:1).

  6. Fast SiPM Readout of the PANDA TOF Detector

    Science.gov (United States)

    Böhm, M.; Lehmann, A.; Motz, S.; Uhlig, F.

    2016-05-01

    For the identification of low momentum charged particles and for event timing purposes a barrel Time-of-Flight (TOF) detector surrounding the interaction point is planned for the PANDA experiment at FAIR . Since the boundary conditions in terms of available radial space and radiation length are quite strict the favored layout is a hodoscope composed of several thousand small scintillating tiles (SciTils) read out by silicon photomultipliers (SiPMs). A time resolution of well below 100 ps is aimed for. With the originally proposed 30 × 30 × 5 mm3 SciTils read out by two single 3 × 3 mm2 SiPMs at the rims of the scintillator the targeted time resolution can be just reached, but with a considerable position dependence across the scintillator surface. In this paper we discuss other design options to further improve the time resolution and its homogeneity. It will be shown that wide scintillating rods (SciRods) with a size of, e.g., 50 × 30 × 5 mm3 or longer and read out at opposite sides by a chain of four serially connected SiPMs a time resolution down to 50 ps can be reached without problems. In addition, the position dependence of the time resolution is negligible. These SciRods were tested in the laboratory with electrons of a 90Sr source and under real experimental conditions in a particle beam at CERN. The measured time resolutions using fast BC418 or BC420 plastic scintillators wrapped in aluminum foil were consistently between 45 and 75 ps dependent on the SciRod design. This is a significant improvement compared to the original SciTil layout.

  7. Diffusion barrier and adhesion properties of SiO(x)N(y) and SiO(x) layers between Ag/polypyrrole composites and Si substrates.

    Science.gov (United States)

    Horváth, Barbara; Kawakita, Jin; Chikyow, Toyohiro

    2014-06-25

    This paper describes the interface reactions and diffusion between silver/polypyrrole (Ag/PPy) composite and silicon substrate. This composite material can be used as a novel technique for 3D-LSI (large-scale integration) by the fast infilling of through-silicon vias (TSV). By immersion of the silicon wafer with via holes into the dispersed solution of Ag/PPy composite, the holes are filled with the composite. It is important to develop a layer between the composite and the Si substrate with good diffusion barrier and adhesion characteristics. In this paper, SiOx and two types of SiOxNy barrier layers with various thicknesses were investigated. The interface structure between the Si substrate, the barrier, and the Ag/PPy composite was characterized by transmission electron microscopy. The adhesion and diffusion properties of the layers were established for Ag/PPy composite. Increasing thickness of SiOx proved to permit less Ag to transport into the Si substrate. SiOxNy barrier layers showed very good diffusion barrier characteristics; however, their adhesion depended strongly on their composition. A barrier layer composition with good adhesion and Ag barrier properties has been identified in this paper. These results are useful for filling conductive metal/polymer composites into TSV.

  8. POSSuMUS: a position sensitive scintillating muon SiPM detector

    CERN Document Server

    Ruschke, Alexander

    The development of a modular designed large scale scintillation detector with a two-dimensional position sensitivity is presented in this thesis. This novel POsition Sensitive Scintillating MUon SiPM Detector is named POSSuMUS. The POSSuMUS detector is capable to determine the particle’s position in two space dimensions with a fast trigger capability. Each module is constructed from two trapezoidal shaped plastic scintillators to form one rectangular shaped detector module. Both trapezoids are optically insulated against each other. In both trapezoids the scintillation light is collected by plastic fibers and guided towards silicon photomultipliers (SiPMs). SiPMs are light sensors which are capable to detect even smallest amounts of light. By combining several detector modules, position sensitive areas from 100 cm2 to few m2 are achievable with few readout channels. Therefore, POSSuMUS provides a cost effective detector concept. The position sensitivity along the trapezoidal geometry of one detector module ...

  9. High Operating Temperature Midwave Quantum Dot Barrier Infrared Detector (QD-BIRD)

    Science.gov (United States)

    Ting, David Z.; Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Mumolo, Jason M.; Gunapala, Sarath D.

    2012-01-01

    The nBn or XBn barrier infrared detector has the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. High performance detectors and focal plane arrays (FPAs) based on InAsSb absorber lattice matched to GaSb substrate, with a matching AlAsSb unipolar electron barrier, have been demonstrated. The band gap of lattice-matched InAsSb yields a detector cutoff wavelength of approximately 4.2 ??m when operating at 150K. We report results on extending the cutoff wavelength of midwave barrier infrared detectors by incorporating self-assembled InSb quantum dots into the active area of the detector. Using this approach, we were able to extend the detector cutoff wavelength to 6 ?m, allowing the coverage of the full midwave infrared (MWIR) transmission window. The quantum dot barrier infrared detector (QD-BIRD) shows infrared response at temperatures up to 225 K.

  10. Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

    Directory of Open Access Journals (Sweden)

    Hassan Maktuff Jaber Al-Ta'ii

    2015-02-01

    Full Text Available Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al/DNA/silicon (Si rectifying junctions using their current-voltage (I-V characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0 was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min. These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors.

  11. Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: Recent Advances and Future Directions

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    This presentation briefly reviews the SiC/SiC major environmental and environment-fatigue degradations encountered in simulated turbine combustion environments, and thus NASA environmental barrier coating system evolution for protecting the SiC/SiC Ceramic Matrix Composites for meeting the engine performance requirements. The presentation will review several generations of NASA EBC materials systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. This paper will also focus on the performance requirements and design considerations of environmental barrier coatings for next generation turbine engine applications. The current development emphasis is placed on advanced NASA candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. The efforts have been also directed to developing prime-reliant, self-healing 2700F EBC bond coat; and high stability, lower thermal conductivity, and durable EBC top coats. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance will be described. The research and development opportunities for turbine engine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be briefly discussed.

  12. Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

    Institute of Scientific and Technical Information of China (English)

    Zhou Mei-Li; Fu Ya-Bo; Chen Qiang; Ge Yuan-Jing

    2007-01-01

    This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of O2/Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared,water wpour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the O2/TMDSO ratio exceeding 2:1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.

  13. Graded tunnelling barrier and oxygen concentration in thermally grown ultrathin SiO{sub x} gate oxide

    Energy Technology Data Exchange (ETDEWEB)

    Gitlin, Daniel [Device Physics Laboratory, Xilinx, Inc., 2100 Logic Drive, San Jose, CA 95124-3400 (United States); Karp, James [Device Physics Laboratory, Xilinx, Inc., 2100 Logic Drive, San Jose, CA 95124-3400 (United States); Moyzhes, Boris [Geballe Laboratory for Advanced Materials, McCullough Building, Stanford University, CA 94305-4045 (United States)

    2007-04-07

    Barrier parameters of a thermally grown SiO{sub x} gate oxide are derived by relating the SIMS oxygen concentration profile to the barrier height. Even in the simple analytical form such a graded barrier model agrees with the tunnelling current and its voltage dependence in both directions. Asymmetrical tunnelling I-Vs in the symmetrical n{sup +}Si-SiO{sub x}-n{sup +}Si structure are due to both graded barrier and penetration of carriers into the gate oxide at the SiO{sub x}-Si substrate interface.

  14. Recent results of the 3D-stripixel Si detectors

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zheng, E-mail: lizheng@xtu.edu.cn [School of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, Hunan 411105 (China); Bassignana, D. [Centro Nacional de Microelectrónica IMB-CNM-CSIC, Campus Universidad Autónoma de Barcelona, 08193 Bellaterra, Barcelona (Spain); Chen, Wei; Liu, Shuhuan; Lynn, David [Brookhaven National Laboratory, Upton, NY 11973 (United States); Pellegrini, G. [Centro Nacional de Microelectrónica IMB-CNM-CSIC, Campus Universidad Autónoma de Barcelona, 08193 Bellaterra, Barcelona (Spain)

    2014-11-21

    The design, fabrication process and the characteristics measurements of the new 3D-stripixel detectors are presented in this paper. The optimized detectors design is simulated and analyzed with Sentaurus TCAD toolkit. The active area of the detector was studied with the laser transient current techniques (TCT) measurement. The characteristics of detector's 2D position sensitivity and charge collection was studied with an Alibava DAQ system.

  15. FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip....

  16. Uncooled Radiation Hard SiC Schottky VUV Detectors Capable of Single Photon Sensing Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize very large area, uncooled and radiative hard 4H-SiC VUV detectors capable of near single...

  17. Analysis and comparison of the breakdown performance of semi- insulator and dielectric passivated Si strip detectors

    CERN Document Server

    Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

    2002-01-01

    The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction dep...

  18. TEM study on Si0.65Ge0.35/p-Si HIP infrared detector

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    Microstructure of P+ -Si0.65Ge0.35/p-Si HIP infrared detector has been studied by using localization cross-section transmission electron microscopy. The photosensitive region of the detector consists of 6 P+ -Si0.65Ge0.35 layers and 5 UD-Si layers, whichare flat and have thickness of 6 nm and 32 nm, respectively. A stress field exists on the interface between Si0.65Ge0.35 and UD-Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si0.65Ge0.35 and UD-Si layers on amorphous SiO2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region.The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.

  19. Fabrication of Pop-up Detector Arrays on Si Wafers

    Science.gov (United States)

    Li, Mary J.; Allen, Christine A.; Gordon, Scott A.; Kuhn, Jonathan L.; Mott, David B.; Stahle, Caroline K.; Wang, Liqin L.

    1999-01-01

    High sensitivity is a basic requirement for a new generation of thermal detectors. To meet the requirement, close-packed, two-dimensional silicon detector arrays have been developed in NASA Goddard Space Flight Center. The goal of the task is to fabricate detector arrays configured with thermal detectors such as infrared bolometers and x-ray calorimeters to use in space fliGht missions. This paper focuses on the fabrication and the mechanical testing of detector arrays in a 0.2 mm pixel size, the smallest pop-up detectors being developed so far. These array structures, nicknamed "PUDS" for "Pop-Up Detectors", are fabricated on I pm thick, single-crystal, silicon membranes. Their designs have been refined so we can utilize the flexibility of thin silicon films by actually folding the silicon membranes to 90 degrees in order to obtain close-packed two-dimensional arrays. The PUD elements consist of a detector platform and two legs for mechanical support while also serving as electrical and thermal paths. Torsion bars and cantilevers connecting the detector platform to the legs provide additional flexures for strain relief. Using micro-electromechanical structure (MEMS) fabrication techniques, including photolithography, anisotropic chemical etching, reactive-ion etching, and laser dicing, we have fabricated PLTD detector arrays of fourteen designs with a variation of four parameters including cantilever length, torsion bar length and width, and leg length. Folding tests were conducted to test mechanical stress distribution for the array structures. We obtained folding yields and selected optimum design parameters to reach minimal stress levels. Computer simulation was also employed to verify mechanical behaviors of PUDs in the folding process. In addition, scanning electron microscopy was utilized to examine the flatness of detectors and the alignment of detector pixels in arrays. The fabrication of thermistors and heaters on the pop-up detectors is under way

  20. Characterization of Ta-based barrier films on SiLK for Cu-metalization

    NARCIS (Netherlands)

    Bystrova, S.; Holleman, J.; Woerlee, P.H.; Wolters, R.A.M.

    2002-01-01

    Structures with Ta, TaxN1-x, Ta90C10, Ta95Si5 on SiLK were tested using in-situ 4- point probe resistance measurements during annealing up to 400oC. The change in normalized resistance by a factor of up to 2.58 was attributed to oxygen diffusion out of SiLK layer into the barriers. No direct chemica

  1. Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide.

    Science.gov (United States)

    Zhu, Shiyang; Lo, G Q; Kwong, D L

    2011-08-15

    An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used.

  2. Progress towards the Detailed Baseline Design for the SiD Detector Concept

    CERN Document Server

    White, Andy

    2012-01-01

    This paper summarizes the status of the SiD Detector Concept with respect to the Detailed Baseline Design document to be prepared by the end of 2012. Each area of the SiD design is described with emphasis on the results expected for the DBD, R&D priorities, and areas of concern.

  3. Effect of Annealing Ambience on the Chemical Stability of Zr-Si-N Diffusion Barrier

    Institute of Scientific and Technical Information of China (English)

    SONGZhong-xiao; WANGYuan; XUKe-wei; LIUChun-liang

    2004-01-01

    Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 gasmixture at 800℃, respectively. The structure of the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and four-point probe method. The sheet resistances of the Cu/Zr-Si-N/Si contact systems annealed in N2/H2 gas mixture were lower than those of the specimens annealed in vacuum at 800℃. The residual oxygen contamination from vacuum annealing ambience influences the sheet resistances of the Cu/Zr-Si-N/Si contact systems due to residual oxygen contamination and/or voids in Cu films. Though thermal stabilities of the Cu/Zr-Si-N/Si systems were maintained up to 800℃ when annealed in vacuum and N2/H2 gas mixture, the changes of thermal stability of specimens were noticeable. The vacuum can accelerate the oxidation and decomposition of Zr-Si-N barrier. On the contrary, N2/H2 gas mixture prevent from the Zr-Si-N barrier oxidation and decomposition.

  4. Effect of Annealing Ambience on the Chemical Stability of Zr-Si-N Diffusion Barrier

    Institute of Scientific and Technical Information of China (English)

    SONG Zhong-xiao; WANG Yuan; XU Ke-wei; LIU Chun-liang

    2004-01-01

    Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 gas mixture at 800℃, respectively. The structure of the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and four-point probe method. The sheet resistances of the Cu/Zr-Si-N/Si contact systems annealed in N2/H2 gas mixture were lower than those of the specimens annealed in vacuum at 800℃. The residual oxygen contamination from vacuum annealing ambience influences the sheet resistances of the Cu/Zr-Si-N/Si contact systems due to residual oxygen contamination and/or voids in Cu films. Though thermal stabilities of the Cu/Zr-Si-N/Si systems were maintained up to 800℃ when annealed in vacuum and N2/H2 gas mixture, the changes of thermal stability of specimens were noticeable. The vacuum can accelerate the oxidation and decomposition of Zr-Si-N barrier. On the contrary, N2/H2 gas mixture prevent from the Zr-Si-N barrier oxidation and decomposition.

  5. Linear electronics for Si-detectors and its energy calibration for use in heavy ion experiments

    CERN Document Server

    Taccetti, N; Carraresi, L; Bini, M; Casini, G; Ciaranfi, R; Giuntini, L; Maurenzig, P R; Montecchi, M; Olmi, A; Pasquali, G; Piantelli, S; Stefanini, A A

    2003-01-01

    The design and implementation of linear electronics based on small-size, low-power charge preamplifiers and shaping amplifiers, used in connection with Si-detector telescopes employed in heavy ion experiments, are presented. Bench tests and 'under beam' performances are discussed. In particular, the energy calibration and the linearity test of the overall system (Si-detector and linear and digital conversion electronics) has been performed with a procedure which avoids the pulse height defect problems connected with the detection of heavy ions. The procedure, basically, consists of using bursts of MeV protons, releasing up to GeV energies inside the detector, with low ionization density.

  6. Linear electronics for Si-detectors and its energy calibration for use in heavy ion experiments

    Science.gov (United States)

    Taccetti, N.; Poggi, G.; Carraresi, L.; Bini, M.; Casini, G.; Ciaranfi, R.; Giuntini, L.; Maurenzig, P. R.; Montecchi, M.; Olmi, A.; Pasquali, G.; Piantelli, S.; Stefanini, A. A.

    2003-01-01

    The design and implementation of linear electronics based on small-size, low-power charge preamplifiers and shaping amplifiers, used in connection with Si-detector telescopes employed in heavy ion experiments, are presented. Bench tests and "under beam" performances are discussed. In particular, the energy calibration and the linearity test of the overall system (Si-detector and linear and digital conversion electronics) has been performed with a procedure which avoids the pulse height defect problems connected with the detection of heavy ions. The procedure, basically, consists of using bursts of MeV protons, releasing up to GeV energies inside the detector, with low ionization density.

  7. Study of the characteristics of SiPMs matrix as a photosensor for the scintillation detectors

    CERN Document Server

    Dzaparova, I M; Gavrilyuk, Yu M; Petkov, V B; Sergeev, A V; Volchenko, V I; Yakimenko, S P; Yanin, A F

    2015-01-01

    The matrices formed of silicon photomultipliers (SiPMs) are very promising photosensors for the scintillation detectors. The use of SiPM matrices with appropriate optical collector gives, in principle, a possibility to do a snapshot of glowing track of charged particle traversing a scintillator. The prototype of such scintillation detector is under development now in INR RAS. The preliminary results of characterization study of the matrix ArrayC-60035-64P-PCB (SensL company) for the prototype of such detector are presented.

  8. Analysis and optimal design of Si microstrip detector with overhanging metal electrode

    CERN Document Server

    Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

    2001-01-01

    The harsh radiation environment to be encountered at LHC (large hadron collider) and RHIC (relativistic heavy ion collider) poses a challenging task for the fabrication of Si microstrip detectors. Due to high luminosities, detectors are required to sustain very high voltage operation well exceeding the bias voltage needed to fully deplete them. The "overhanging" metal contact is now a well established technique for improving the breakdown performance of the Si microstrip detector. Based on computer simulation, the influence of various physical and geometrical parameters on the electrical breakdown of the Si detectors equipped with metal overhangs is extensively analysed. Furthermore, optimization of design parameters is performed to achieve breakdown voltages close to maximum realizable values. The simulation results are found to be in good agreement with experimental data. (17 refs).

  9. A sensitive gas chromatography detector based on atmospheric pressure chemical ionization by a dielectric barrier discharge.

    Science.gov (United States)

    Kirk, Ansgar T; Last, Torben; Zimmermann, Stefan

    2017-02-03

    In this work, we present a novel concept for a gas chromatography detector utilizing an atmospheric pressure chemical ionization which is initialized by a dielectric barrier discharge. In general, such a detector can be simple and low-cost, while achieving extremely good limits of detection. However, it is non-selective apart from the use of chemical dopants. Here, a demonstrator manufactured entirely from fused silica capillaries and printed circuit boards is shown. It has a size of 75×60×25mm(3) and utilizes only 2W of power in total. Unlike other known discharge detectors, which require high-purity helium, this detector can theoretically be operated using any gas able to form stable ion species. Here, purified air is used. With this setup, limits of detection in the low parts-per-billion range have been obtained for acetone.

  10. Calibration of diffusion barrier charcoal detectors and application to radon sampling in dwellings

    Energy Technology Data Exchange (ETDEWEB)

    Montero C, M.E.; Colmenero S, L.; Villalba, L.; Saenz P, J.; Cano J, A.; Moreno B, A.; Renteria V, M.; Herrera P, E.F. [Cento de Investigacion en Materiales Avanzados, S. C. Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, (Mexico); Cruz G, S. De la [Facultad de Enfermeria y Nutriologia, Universidad Autonoma de Chihuahua, Av. Politecnico Nacional 2714, Chihuahua, (Mexico); Lopez M, A. [Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, 11801 Mexico D.F. (Mexico)

    2003-07-01

    Some calibration conditions of diffusion barrier charcoal canister (DBCC) detectors for measuring radon concentration in air were studied. A series of functional expressions and graphs were developed to describe relationship between radon concentration in air and the activity adsorbed in DBCC, when placed in small chambers. A semi-empirical expression for the DBCC calibration was obtained, based on the detector integration time and the adsorption coefficient of radon on activated charcoal. Both, the integration time for 10 % of DBCC of the same batch, and the adsorption coefficient of radon for the activated charcoal used in these detectors, were experimentally determined. Using these values as the calibration parameters, a semi-empirical calibration function was used for the interpretation of the radon activities in the detectors used for sampling more than 200 dwellings in the major cities of the state of Chihuahua, Mexico. (Author)

  11. Electrical properties of the sensitive side in Si edgeless detectors

    CERN Document Server

    Verbitskaya, E; Eremin, I; Ilyashenko, I; Cavallini, A; Castaldini, A; Pellegrini, G; Lozano, M; Golubkov, S; Egorov, N; Konkov, K; Tuuva, T

    2009-01-01

    Silicon edgeless detectors represent a novel type of detector that are being developed for close-to-beam applications in high-energy physics and for large-scale tiled 1D and 2D arrays used in radiation imaging. In this work, the electric field and potential distributions on the device cut side, key factors in detector performance, have been investigated using two methods—the Conductive Microprobe Technique and the Scanning Transient Current Technique. It has been found that the behaviour of the potential distribution at the edge indicates a significant presence of positively charged states, with the charge density changing with the applied voltage. This work will predict, to a first approximation, the trend of the electric field at the edge of these devices after irradiation to high fluences. This prediction will provide key inputs in the development of edgeless radiation hard detectors.

  12. One-cm-thick Si detector at LHe temperature

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Ferrara, Via Saragat 1, 44100 Ferrara (Italy)], E-mail: braggio@pd.infn.it; Bressi, G. [INFN, Sez. di Pavia, Via Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, Sez. di Padova, Via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [Laboratori Nazionali di Legnaro, Via dell' Universita 1, 35020 Legnaro (Italy); Serafin, A. [Dipartimento di Fisica, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy)

    2007-10-11

    A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events.

  13. Effect of SiO$_{2}$ passivating layer in segmented silicon planar detectors on the detector response

    CERN Document Server

    Verbitskaya, Elena; Eremin, Vladimir; Golubkov, S; Konkov, K; Roe, Shaun; Ruggiero, G; Sidorov, A; Weilhammer, Peter

    2004-01-01

    Silicon detectors with a fine segmentation (micropixel and microstrip) are the main type of detectors used in the inner trackers of LHC experiments. Due to the high luminosity of the LHC machines they are required to have a fast response to fit the short shaping time of 25 ns and to be radiation hard. Evaluation of silicon microstrip detectors developed for the ATLAS silicon tracker and carried out under collaboration of CERN and PTI has shown the reversal of the pulse polarity in the detector response to short- range radiation. Since the negative signal is of about 30% of the normal positive one, the effect strongly reduces the charge collection efficiency in irradiated detectors. The investigation presents the consideration on the origin of a negative response in Si microstrip detectors and the experimental proof of the model. The study of the effect has been carried out using "baby" strip detectors with a special design: each strip has a window in a metallization, which covers the p/sup +/ implant. The sca...

  14. Study the radiation damage effects in Si microstrip detectors for future HEP experiments

    Science.gov (United States)

    Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

    2016-07-01

    Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

  15. Gamma Sensitivity of A 4H-SiC Detector in Current Mode%4H-SiC电流型探测器对60Co源γ射线的响应研究

    Institute of Scientific and Technical Information of China (English)

    郭子瑜; 李明富; 李莉; 金长江; 吴健

    2014-01-01

    为研究4H-SiC电流型探测器对γ射线的探测性能,采用4H-SiC制成肖特基二极管,并利用60 Co源形成的强γ辐射场研究其对γ射线的响应特性及其影响因素。实验结果表明,当外加反向电压为195 V时,4H-SiC探测器漏电流仅为11.4 pA/cm2,远低于Si基探测器漏电流。当4H-SiC探测器置于强γ辐射场时,由γ射线导致的信号电流为249 nA,比本底信号电流大5个量级。同时4H-SiC探测器在零偏压时也能对γ射线产生明显的信号,均值电流为85 nA。随工作电压增大,4H-SiC探测器的γ响应随之增大。结合4H-SiC探测器体积小、响应快、耐高温和耐辐照等特点,可将4H-SiC探测器用于强钴源点注量在线监测等方面。%A Schottky barrier diode was made using 4H-SiC wide band gap material, which is both radiation resistance and temperature resistance, excellent due to its intrinsic properties.The gamma sensitivity of the 4H-SiC Schottky barrier diode was investigated by irradiating the diode with gamma rays from 60 Co source.The leakage current of the detector is 11.4 pA/cm2 , when a reverse bias of 195V is applied.The gamma induced current is 249 nA when the 4H-SiC detector is irradiated by 60 Co gamma rays.The detector is able to detect gamma rays at zero bias, with a induced current of 85nA.The gamma sensitivity of the 4H-SiC detector in-creases with reversed bias.

  16. Signal variations in high granularity Si pixel detectors

    CERN Document Server

    Tlustos, L; Heijne, Erik H M; Llopart-Cudie, Xavier

    2004-01-01

    Fixed pattern noise is one of the limiting factors of image quality and degrades the achievable spatial resolution. In the case of silicon sensors non-uniformities due to doping inhomogeneities can be limited by operating the sensor in strong overdepletion. For high granularity photon counting pixel detectors an additional high frequency interpixel signal variation is an important factor for the achievable signal to noise ratio (SNR). It is common practice to apply flatfield corrections to increase the SNR of the detector system. For the case of direct conversion detectors it can be shown that the Poisson limit can be reached for floodfield irradiation. However when used for imaging with spectral X-ray sources flatfield corrections are less effective. This is partly a consequence of charge sharing between adjacent pixels, which gives rise to an effective energy spectrum seen by the readout, which is different from the spectral content of the incident beam. In this paper we present simulations and measurements...

  17. Investigation on the preparation of Si/mullite/Yb_2Si_2O_7 environmental barrier coatings onto silicon carbide

    Institute of Scientific and Technical Information of China (English)

    许越; 闫钊通

    2010-01-01

    With the development of aero-engine,gas import temperatures of hot section structural materials are increasingly higher.Metal alloy materials due to the rapidly decreased mechanical properties at relative high temperature are gradually replaced with silicon-based non-oxide silicon carbide ceramics.However,silicon carbide ceramic materials tend to spall and deform in engine combustion environment,need environmental barrier coatings for the protection of the matrix.The preparation of Si/mullite/Yb2Si2O7 envir...

  18. Development of High Resolution Si Strip Detectors for Experiments at High Luminosity at the LHC

    CERN Multimedia

    2002-01-01

    % RD-20 \\\\ \\\\ Recent studies indicate that good tracking near the interaction region in LHC experiments will be crucial to fully exploit the physics potential of this machine up to the highest luminosities. It is believed that Si strip detectors are among the best candidates to survive in the experimental environment imposed by the high energy, high luminosity and the severe radiation levels expected. It is therefore proposed to perform a systematic study of the feasibility of using Si strip detectors and suitably designed front-end electronics for tracking in LHC experiments. Issues discussed here are possible physics applications, requirements and design characteristics for Si strip detectors and front-end electronics and cooling. An R\\&D programme for the coming two years is described.

  19. The ArduSiPM a compact trasportable Software/Hardware Data Acquisition system for SiPM detector

    CERN Document Server

    Bocci, Valerio; Iacoangeli, Francesco; Nuccetelli, Massimo; Recchia, Luigi

    2014-01-01

    The acquisition of a single Silicon Photomultiplier require multiple and expensive electronics modules as : preamplifier, discriminator, bias voltage power supply, temperature monitor, Scalers, Analog to Digital Converter and Time to Digital Converter . The developed ArduSiPM is a compact cost effective and easily replicable Hardware software module for SiPM detector readout. The ArduSiPM uses an Arduino DUE (an open Software/Hardware board based on an ARM Cortex-M3 microcontroller) as processor board and a piggyback custom designed board (Shield), these are controlled by custom developed software and interface. The Shield contains different electronics features both to monitor, to set and to acquire the SiPM signals using the microcontroller board. The shield embed a controlled bias voltage power supply, a fast voltage preamplifier, a programmable fast discriminator to generate over threshold digital pulse , a peak hold to measure the pulse height, a temperature monitor system, a scaler to monitor over thres...

  20. Development of an angled Si-PM-based detector unit for positron emission mammography (PEM) system

    Science.gov (United States)

    Nakanishi, Kouhei; Yamamoto, Seiichi

    2016-11-01

    Positron emission mammography (PEM) systems have higher sensitivity than clinical whole body PET systems because they have a smaller ring diameter. However, the spatial resolution of PEM systems is not high enough to detect early stage breast cancer. To solve this problem, we developed a silicon photomultiplier (Si-PM) based detector unit for the development of a PEM system. Since a Si-PM's channel is small, Si-PM can resolve small scintillator pixels to improve the spatial resolution. Also Si-PM based detectors have inherently high timing resolution and are able to reduce the random coincidence events by reducing the time window. We used 1.5×1.9×15 mm LGSO scintillation pixels and arranged them in an 8×24 matrix to form scintillator blocks. Four scintillator blocks were optically coupled to Si-PM arrays with an angled light guide to form a detector unit. Since the light guide has angles of 5.625°, we can arrange 64 scintillator blocks in a nearly circular shape (a regular 64-sided polygon) using 16 detector units. We clearly resolved the pixels of the scintillator blocks in a 2-dimensional position histogram where the averages of the peak-to-valley ratios (P/Vs) were 3.7±0.3 and 5.7±0.8 in the transverse and axial directions, respectively. The average energy resolution was 14.2±2.1% full-width at half-maximum (FWHM). By including the temperature dependent gain control electronics, the photo-peak channel shifts were controlled within ±1.5% with the temperature from 23 °C to 28 °C. With these results, in addition to the potential high timing performance of Si-PM based detectors, our developed detector unit is promising for the development of a high-resolution PEM system.

  1. Device Physics Analysis of Parasitic Conduction Band Barrier Formation in SiGe HBTs

    Science.gov (United States)

    Roenker, K. P.; Alterovitz, S. A.

    2000-01-01

    This paper presents a physics-based model describing the current-induced formation of a parasitic barrier in the conduction band at the base collector heterojunction in npn SiGe heterojunction bipolar transistors (HBTs). Due to the valence band discontinuity DELTA E(sub v), hole injection into the collector at the onset of base pushout is impeded, which gives rise to formation of a barrier to electron transport which degrades the device's high frequency performance. In this paper, we present results from an analytical model for the height of the barrier calculated from the device's structure as a function of the collector junction bias and collector current density.

  2. Photodiode forward bias to reduce temporal effects in a-Si based flat panel detectors

    Science.gov (United States)

    Mollov, Ivan; Tognina, Carlo; Colbeth, Richard

    2008-03-01

    Lag and sensitivity modulation are well known temporal artifacts of a-Si photodiode based flat panel detectors. Both effects are caused by charge carriers being trapped in the semiconductor. Trapping and releasing of these carriers is a statistical process with time constants much longer than the frame time of flat panel detectors. One way to reduce these temporal artifacts is to keep the traps filled by applying a pulse of light over the entire detector area every frame before the x-ray exposure. This paper describes an alternative method, forward biasing the a-Si photodiodes and supplying free carriers to fill the traps. The array photodiodes are forward biased and then reversed biased again every frame between the panel readout and x-ray exposure. The method requires no change to the mechanical construction of the detector, only minor modifications of the detector electronics and no image post processing. An existing flat panel detector was modified and evaluated for lag and sensitivity modulation. The required changes of the panel configuration, readout scheme and readout timing are presented in this paper. The results of applying the new technique are presented and compared to the standard mode of operation. The improvements are better than an order of magnitude for both sensitivity modulation and lag; lowering their values to levels comparable to the scintillator afterglow. To differentiate the contribution of the a-Si array, from that of the scintillator, a large area light source was used. Possible implementations and applications of the method are discussed.

  3. Durability and CMAS Resistance of Advanced Environmental Barrier Coatings Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2015-01-01

    Environmental barrier coatings (EBCs) and SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. This paper will emphasize advanced environmental barrier coating developments for SiCSiC turbine airfoil components, by using advanced coating compositions and processing, in conjunction with mechanical and environment testing and durability validations. The coating-CMC degradations and durability in the laboratory simulated engine fatigue-creep and complex operating environments are being addressed. The effects of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the degradation mechanisms of the environmental barrier coating systems will be discussed. The results help understand the advanced EBC-CMC system performance, aiming at the durability improvements of more robust, prime-reliant environmental barrier coatings for successful applications of the component technologies and lifing methodologies.

  4. Novel Gas Barrier SiOC Coating to PET Bottles through a Hot Wire CVD Method

    Directory of Open Access Journals (Sweden)

    Masaki Nakaya

    2016-01-01

    Full Text Available In an attempt to enhance the gas barrier enhancement of plastic containers such as poly(ethylene terephthalate bottles, a novel method was found using a hot wire CVD technique, where tantalum wire is heated and exposed to a gas flow of vinyl silane. The resultant SiOC thin film was confirmed to characteristically contain Si-Si bonds in its surface and demonstrate a remarkably and highly practical decrease of the permeation of various gas through poly(ethylene terephthalate bottles.

  5. An improved fabrication process for Si-detector-compatible JFETs

    Energy Technology Data Exchange (ETDEWEB)

    Piemonte, Claudio [ITC-irst, Divisione Microsistemi, Via Sommarive, 18, 38050 Povo di Trento (Italy); Dalla Betta, Gian-Franco [Dipartimento di Informatica e Telecomunicazioni, Universita di Trento, Via Sommarive, 14, 38050 Povo di Trento (Italy)]. E-mail: dallabe@dit.unitn.it; Boscardin, Maurizio [ITC-irst, Divisione Microsistemi, Via Sommarive, 18, 38050 Povo di Trento (Italy); Gregori, Paolo [ITC-irst, Divisione Microsistemi, Via Sommarive, 18, 38050 Povo di Trento (Italy); Zorzi, Nicola [ITC-irst, Divisione Microsistemi, Via Sommarive, 18, 38050 Povo di Trento (Italy); Ratti, Lodovico [Dipartimento di Elettronica, Universita di Pavia, Via Ferrata 1, 27100 Pavia (Italy)

    2006-11-30

    We report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for a sizeable enhancement in the JFET performance. In this paper, the main features of the fabrication technology are presented and selected results from the electrical and noise characterization of transistors are discussed.

  6. Detector block based on arrays of 144 SiPMs and monolithic scintillators: A performance study

    Energy Technology Data Exchange (ETDEWEB)

    González, A.J.; Conde, P.; Iborra, A. [Institute for Instrumentation in Molecular Imaging (I3M), Universidad Politécnica de Valencia – CSIC – CIEMAT (Spain); Aguilar, A. [Communications and Digital Systems Design Group (DSDC), Universidad de Valencia (Spain); Bellido, P. [Institute for Instrumentation in Molecular Imaging (I3M), Universidad Politécnica de Valencia – CSIC – CIEMAT (Spain); García-Olcina, R. [Communications and Digital Systems Design Group (DSDC), Universidad de Valencia (Spain); Hernández, L.; Moliner, L.; Rigla, J.P.; Rodríguez-Álvarez, M.J.; Sánchez, F.; Seimetz, M.; Soriano, A. [Institute for Instrumentation in Molecular Imaging (I3M), Universidad Politécnica de Valencia – CSIC – CIEMAT (Spain); Torres, J. [Communications and Digital Systems Design Group (DSDC), Universidad de Valencia (Spain); Vidal, L.F.; Benlloch, J.M. [Institute for Instrumentation in Molecular Imaging (I3M), Universidad Politécnica de Valencia – CSIC – CIEMAT (Spain)

    2015-07-01

    We have developed a detector block composed by a monolithic LYSO scintillator coupled to a custom made 12×12 SiPMs array. The design is mainly focused to applications such as Positron Emission Tomography. The readout electronics is based on 3 identical and scalable Application Specific Integrated Circuits (ASIC). We have determined the main performance of the detector block namely spatial, energy, and time resolution but also the system capability to determine the photon depth of interaction, for different crystal surface treatments. Intrinsic detector spatial resolution values as good as 1.7 mm FWHM and energies of 15% for black painted crystals were measured.

  7. Thermally induced decomposition of B4C barrier layers in Mo/Si multilayer structures

    NARCIS (Netherlands)

    Bruijn, S.; van de Kruijs, R. W. E.; Yakshin, A. E.; Zoethout, E.; F. Bijkerk,

    2010-01-01

    We investigate the influence of the Mo crystalline state (quasi-amorphous or crystalline) on the thermal stability of Mo/Si thin film multilayers with B4C diffusion barrier layers at either of the two interfaces. We find that multilayers containing amorphous Mo layers are more stable than those cont

  8. INTERFACE STRUCTURE AND SCHOTTKY BARRIERS AT EPITAXIAL SI(111)/PB INTERFACES

    NARCIS (Netherlands)

    WEITERING, HH; HIBMA, T; HESLINGA, DR; KLAPWIJK, TM

    1991-01-01

    Two different epitaxial Si(111)/Pb interfaces can be prepared, i.e. a metastable interface with a (7 x 7) and a stable interface with an incommensurate but close to (square-root 3 x square-root 3)R30-degrees surface unit cell. Schottky barrier heights of diodes made by depositing thick Pb layers on

  9. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  10. Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface

    Energy Technology Data Exchange (ETDEWEB)

    Pasquali, L; Montecchi, M; Nannarone, S [Department of Materials and Environmental Engineering, University of Modena and Reggio Emilia, Via Vignolese 905, I-41125 Modena (Italy); Boscherini, F [Department of Physics, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna (Italy)

    2011-09-07

    A SrF{sub 2} ultrathin barrier layer on Si(001) is used to form a sharp interface and block reactivity and intermixing between the semiconductor and a Yb{sub 2}O{sub 3} overlayer. Yb{sub 2}O{sub 3}/Si(001) and Yb{sub 2}O{sub 3}/SrF{sub 2}/Si(001) interfaces grown in ultra high vacuum by molecular beam epitaxy are studied by photoemission and x-ray absorption fine structure. Without the fluoride interlayer, Yb{sub 2}O{sub 3}/Si(001) presents an interface reacted region formed by SiO{sub x} and/or silicate compounds, which is about 9 A thick and increases up to 14-15 A after annealing at 500-700 {sup 0}C. A uniform single layer of SrF{sub 2} molecules blocks intermixing and reduces the oxidized Si region to 2.4 A after deposition and to 3.5 A after annealing at 500 {sup 0}C. In both cases we estimate a conduction band offset and a valence band offset of {approx} 1.7 eV and 2.4 eV between the oxide and Si, respectively. X-ray absorption fine structure measurements at the Yb L{sub III} edge suggest that the Yb oxide films exhibit a significant degree of static disorder with and without the fluoride barrier. Sr K edge measurements indicate that the ultrathin fluoride films are reacted, with the formation of bonds between Si and Sr; the Sr-Sr and Sr-F interatomic distances in the ultrathin fluoride barrier film are relaxed to the bulk value.

  11. High-voltage breakdown studies on Si microstrip detectors

    CERN Document Server

    Albergo, S; Azzi, P; Babucci, E; Bacchetta, N; Bader, A J; Bagliesi, G; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Buffini, A; Busoni, S; Calefato, G; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Civinini, C; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Marina, R D; Dutta, S; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Fürtjes, A; Giassi, A; Giorgi, M A; Giraldo, A; Glessing, B; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Hrubec, Josef; Muhtinen, M; Kaminski, A; Karimäki, V; Saint-Koenig, M; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Papi, A; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Radicci, V; Raffaelli, F; Raymond, M; Santocchia, A; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Skog, K; Starodumov, Andrei; Stavitski, I; Stefanini, G; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Zie, Z; Li Ya Hong; Watts, S; Wittmer, B

    1999-01-01

    The breakdown performance of CMS barrel module prototype detectors and test devices with single and multi-guard structures were studied before and after neutron irradiation up to 2-10/sup 14/ 1 MeV equivalent neutrons. Before irradiation avalanche breakdown occurred at the guard ring implant edges. We measured 100-300 V higher breakdown voltage values for the devices with multi-guard than for devices with single-guard ring, After irradiation and type inversion the breakdown was smoother than before irradiation and the breakdown voltage value increased to 500-600 V for most of the devices. (9 refs).

  12. Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material

    Directory of Open Access Journals (Sweden)

    D. König

    2013-01-01

    Full Text Available Conventional doping of small nanodots does not provide majority carriers due to self-purification effects and much increased ionisation energies of dopants presenting point defects. Adjacent barrier layers to Si-rich Si3N4 can be doped by excess Si in-situ with the segregation anneal for Si nanodot formation. Donor doping of AlxGa1−xN (0 ⩽ x ⩽ 1 with Si is an established process. Material properties and process compatibility of AlxGa1−xN render it suitable as barrier for Si nanodot superlattices. Ab-initio calculations showed that Ge also works as a donor in AlN, extending the material range to Ge and SiGe nanodots in Si3N4.

  13. Development of Si-based detectors for intermediate energy heavy-ion physics at a storage-ring accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Whitlow, H.J.; Jaworowski, J.; Leandersson, M.; El Bouanani, M. [Lund Institute of Technology, Solvegatan Lund, (Sweden). Department of Nuclear Physics; Jakobsson, B. [Lund Univ. (Sweden). Dept. of Cosmic and Subatomic Physics; Romanski, J.; Westerberg, L.; Van Veldhuizen, E.J. [Uppsala Univ. (Sweden); The Chicsi Collaboration

    1996-12-31

    Ultrahigh vacuum (UHV) compatible Si detectors are being developed by the CELSIUS Heavy lon Collaboration (CHIC) for measuring the energy and identity of Intermediate Mass Fragments (IMF) with Z {approx} 3 - 12 and energies of 0.7 - I 0 A MeV. Here we give an overview of the development of Si {delta}E-E detector telescopes and investigations on IMF identification based on the pulse shape from Si-detectors where the particles impinge on the rear-face of the detector. 9 refs., 4 figs.

  14. A novel, SiPM-array-based, monolithic scintillator detector for PET

    Energy Technology Data Exchange (ETDEWEB)

    Schaart, Dennis R; Dam, Herman T van; Seifert, Stefan; Beekman, Freek J [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Vinke, Ruud; Dendooven, Peter; Loehner, Herbert [Kernfysisch Versneller Instituut, University of Groningen, Zernikelaan 25, 9747 AA, Groningen (Netherlands)], E-mail: d.r.schaart@tudelft.nl

    2009-06-07

    Silicon photomultipliers (SiPMs) are of great interest to positron emission tomography (PET), as they enable new detector geometries, for e.g., depth-of-interaction (DOI) determination, are MR compatible, and offer faster response and higher gain than other solid-state photosensors such as avalanche photodiodes. Here we present a novel detector design with DOI correction, in which a position-sensitive SiPM array is used to read out a monolithic scintillator. Initial characterization of a prototype detector consisting of a 4 x 4 SiPM array coupled to either the front or back surface of a 13.2 mm x 13.2 mm x 10 mm LYSO:Ce{sup 3+} crystal shows that front-side readout results in significantly better performance than conventional back-side readout. Spatial resolutions <1.6 mm full-width-at-half-maximum (FWHM) were measured at the detector centre in response to an {approx}0.54 mm FWHM diameter test beam. Hardly any resolution losses were observed at angles of incidence up to 45 deg., demonstrating excellent DOI correction. About 14% FWHM energy resolution was obtained. The timing resolution, measured in coincidence with a BaF{sub 2} detector, equals 960 ps FWHM.

  15. Scintillating fiber detectors for precise time and position measurements read out with Si-PMs

    Science.gov (United States)

    Damyanova, A.; Bravar, A.

    2017-02-01

    We present the development and performance of compact scintillating fiber detectors read out with silicon photo-multipliers (Si-PMs). The compact size, fast response, and insensitivity to magnetic fields make these detectors suitable for a variety of applications where precise tracking and timing information is required. These detectors will be used with different particle beams (electrons, protons, heavy ions) at very high rates. In particular, we present the SciFi tracker/time of flight detector that is being developed for the Mu3e experiment at PSI (search for the lepton flavor violating decay μ → eee at very high rates). We also present the SciFi beam position detectors that will be employed in NA61 at CERN to track the incoming proton and heavy ion beam particles. We are considering different readout scenarios in which (a) each fiber is individually coupled to a single Si-PM photo-sensor and (b) fibers are arranged in columns and coupled to a Si-PM arrays.

  16. A conductive surface coating for Si-CNT radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Valentini, Antonio, E-mail: antonio.valentini@ba.infn.it [Dipartimento di Fisica, Università degli Studi di Bari, Via Orabona 4, 70125 Bari (Italy); Valentini, Marco [INFN, Sezione di Bari, Via Orabona 4, 70126 Bari (Italy); Ditaranto, Nicoletta [Dipartimento di Chimica, Università degli Studi di Bari, Via Amendola 173, 70126 Bari (Italy); Melisi, Domenico [INFN, Sezione di Bari, Via Orabona 4, 70126 Bari (Italy); Aramo, Carla, E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, Antonio [CNR-SPIN U.O.S. di Napoli and Dipartimento di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Casamassima, Giuseppe [Dipartimento di Fisica, Università degli Studi di Bari, Via Orabona 4, 70125 Bari (Italy); INFN, Sezione di Bari, Via Orabona 4, 70126 Bari (Italy); Cilmo, Marco [INFN, Sezione di Napoli, and Dipartimento di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Fiandrini, Emanuele [INFN, Sezione di Perugia, and Dipartimento di Fisica, Università degli Studi di Perugia, Piazza Università 1, 06100 Perugia (Italy); Grossi, Valentina [INFN, Sezione di L’Aquila, and Dipartimento di Scienze Fisiche e Chimiche, Università degli Studi dell’Aquila, Via Vetoio 10 Coppito, 67100 L’Aquila (Italy); and others

    2015-08-01

    Silicon–Carbon Nanotube radiation detectors need an electrically conductive coating layer to avoid the nanotube detachment from the silicon substrate and uniformly transmit the electric field to the entire nanotube active surface. Coating material must be transparent to the radiation of interest, and must provide the drain voltage necessary to collect charges generated by incident photons. For this purpose various materials have been tested and proposed in photodetector and photoconverter applications. In this article interface properties and electrical contact behavior of Indium Tin Oxide films on Carbon Nanotubes have been analyzed. Ion Beam Sputtering has been used to grow the transparent conductive layer on the nanotubes. The films were deposited at room temperature with Oxygen/Argon mixture into the sputtering beam, at fixed current and for different beam energies. Optical and electrical analyses have been performed on films. Surface chemical analysis and in depth profiling results obtained by X-ray Photoelectron Spectroscopy of the Indium Tin Oxide layer on nanotubes have been used to obtain the interface composition. Results have been applied in photodetectors realization based on multi wall Carbon Nanotubes on silicon. - Highlights: • ITO was deposited by Ion Beam Sputtering on MWCNT. • ITO on CNT makes an inter-diffusion layer of the order of one hundred nanometers. • Improvements of quantum efficiency of photon detectors based on CNT with ITO.

  17. Energy measurement and fragment identification using digital signals from partially depleted Si detectors

    CERN Document Server

    Pasquali, G; Neindre, N Le; Ademard, G; Barlini, S; Bini, M; Bonnet, E; Borderie, B; Bougault, R; Bruno, M; Casini, G; Chbihi, A; Cinausero, M; Duenas, J A; Edelbruck, P; Frankland, J D; Gramegna, F; Gruyer, D; Kordyasz, A; Kozik, T; Lopez, O; Marchi, T; Morelli, L; Olmi, A; Ordine, A; Parlog, M; Piantelli, S; Poggi, G; Rivet, M F; Rosato, E; Salomon, F; Spadaccini, G; Stefanini, A A; Valdre, S; Vient, E; Twarog, T; Alba, R; Maiolino, C; Santonocito, D

    2014-01-01

    A study of identification properties of a Si-Si DE-E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias voltages have been used, one corresponding to full depletion, the others associated with a depleted layer ranging from 90% to 60% of the detector thickness. Fragment identification has been performed using either the DE-E technique or Pulse Shape Analysis (PSA). Both detectors are reverse mounted: particles enter from the low field side, to enhance the PSA performance. The achieved charge and mass resolution has been quantitatively expressed using a Figure of Merit (FoM). Charge collection efficiency has been evaluated and the possibility of energy calibration corrections has been considered. We find that the DE-E performance is not affected by incomplete depletion even when only 60% of the wafer is depleted. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds are higher tha...

  18. Linear electronics for Si-detectors and its energy calibration for use in heavy ion experiments

    Energy Technology Data Exchange (ETDEWEB)

    Taccetti, N.; Poggi, G.; Carraresi, L.; Bini, M.; Casini, G.; Ciaranfi, R.; Giuntini, L.; Maurenzig, P.R.; Montecchi, M.; Olmi, A.; Pasquali, G.; Piantelli, S.; Stefanini, A.A. E-mail: stefanini@fi.infn.it

    2003-01-11

    The design and implementation of linear electronics based on small-size, low-power charge preamplifiers and shaping amplifiers, used in connection with Si-detector telescopes employed in heavy ion experiments, are presented. Bench tests and 'under beam' performances are discussed. In particular, the energy calibration and the linearity test of the overall system (Si-detector and linear and digital conversion electronics) has been performed with a procedure which avoids the pulse height defect problems connected with the detection of heavy ions. The procedure, basically, consists of using bursts of MeV protons, releasing up to GeV energies inside the detector, with low ionization density.

  19. Surface Passivation of Ti/4H-SiC Schottky Barrier Diode

    Institute of Scientific and Technical Information of China (English)

    Muhammad Khalid; Saira Riaz; Shahzad Naseem

    2012-01-01

    Surface properties of SiC power devices mostly depend on the passivation layer (PL).This layer has direct influence on electrical characteristics of devices.2D numerical simulation of forward and reverse characteristics with and without different (PLs) (SiO2,HfO2 and Si3N4) has been performed.Simulation results show that the breakdown voltage increases with increasing PL thickness,and there is a lesser significant effect on forward characteristics.The maximum breakdown voltage with and without SiO2 PL is 1240 V and 276 V,respectively.SiO2 PL has compatibility with SiC surface providing high breakdown voltage,6 and 8% higher than that of HfO2 and Si3N4 respectively.Low leakage current is observed which then further decreases on reducing the thickness of PL.Furthermore,variation of forward current with dielectric constant and thickness of PLs was observed.Finally,it is suggested that matches of our results with published experimental results indicate that the Sentaurus TCAD simulator is a predictive tool for the SiC Schottky barrier diode simulation.

  20. Measurements of Si Hybrid CMOS X-Ray Detector Characteristics

    CERN Document Server

    Bongiorno, Stephen D; Burrows, David N; Cook, Robert; Bai, Yibin; Farris, Mark

    2009-01-01

    The development of Hybrid CMOS Detectors (HCDs) for X-Ray telescope focal planes will place them in con- tention with CCDs on future satellite missions due to their faster frame rates, flexible readout scenarios, lower power consumption, and inherent radiation hardness. CCDs have been used with great success on the current generation of X-Ray telescopes (e.g. Chandra, XMM, Suzaku, and Swift). However their bucket-brigade read-out architecture, which transfers charge across the chip with discrete component readout electronics, results in clockrate limited readout speeds that cause pileup (saturation) of bright sources and an inherent susceptibility to radiation induced displacement damage that limits mission lifetime. In contrast, HCDs read pixels with low power, on-chip multiplexer electronics in a random access fashion. Faster frame rates achieved with multi-output readout design will allow the next generation's larger effective area telescopes to observe bright sources free of pileup. Radiation damaged latt...

  1. Asymmetry of characteristic X-ray peaks obtained by a Si(Li) detector

    Energy Technology Data Exchange (ETDEWEB)

    Visnovezky, Claudia [Facultad de Matematica, Astronomia y Fisica, Universidad Nacional de Cordoba, Ciudad Universitaria, 5000, Cordoba (Argentina)], E-mail: cavy3@hotmail.com; Limandri, Silvina [Facultad de Matematica, Astronomia y Fisica, Universidad Nacional de Cordoba, Ciudad Universitaria, 5000, Cordoba (Argentina)], E-mail: silvilimandri@hotmail.com; Canafoglia, Maria Elena [Centro de Investigacion y Desarrollo en Ciencias Aplicadas Dr. Jorge Ronco, Calle 47 No 257, 1900 La Plata, Argentina, Facultad de Ciencias Exactas y Facultad de Ingenieria de la UNLP, La Plata (Argentina); Bonetto, Rita [Centro de Investigacion y Desarrollo en Ciencias Aplicadas Dr. Jorge Ronco, Calle 47 No 257, 1900 La Plata, Argentina, Facultad de Ciencias Exactas y Facultad de Ingenieria de la UNLP, La Plata (Argentina); Consejo Nacional de Investigaciones Cientificas y Tecnicas de la Republica Argentina (Argentina)], E-mail: bonetto@quimica.unlp.edu.ar; Trincavelli, Jorge [Facultad de Matematica, Astronomia y Fisica, Universidad Nacional de Cordoba, Ciudad Universitaria, 5000, Cordoba (Argentina); Consejo Nacional de Investigaciones Cientificas y Tecnicas de la Republica Argentina (Argentina)], E-mail: jorge@quechua.fis.uncor.edu

    2007-05-15

    The asymmetry of the characteristic X-ray peaks obtained using a Si(Li) detector is mainly due to incomplete charge collection. Impurities and defects in the crystalline structure of Si can act as 'traps' for holes and electrons in their trip toward the detector electrodes. Therefore, the collected charge, and consequently the detected energy, is smaller than the expected one. The global effect is that peaks may present a 'tail' toward the low energy side. This phenomenon is more important for low energies (lower than 2.3 keV, in the case of the detector characterized). In this work, the parameters related to peak asymmetry were studied, allowing a better understanding of the trapping process mentioned above. For this purpose, spectra from mono- and multi-element samples were collected for elements with atomic number between 7 and 20. In order to describe the shape of the characteristic K peaks as a function of its energy, an asymmetric correction to a Gaussian function was proposed. Spectra were obtained by electron probe microanalysis for incidence energies between 5 and 25 keV using an energy dispersive spectrometer equipped with an ultra-thin window Si(Li) detector. It was observed that the area corresponding to the asymmetric correction exhibits an energy dependence similar to that of the mass absorption coefficient of the detector material. In addition, other two spectrometers were used to investigate the dependence of tailing on the detection system. When two spectrometers with the same kind of detector and different pulse processors were compared, peaks were more asymmetric for lower peaking time values. When two different detectors were used, differences were even more important.

  2. Nucleophilic substitution at silicon (SN2@Si) via a central reaction barrier.

    Science.gov (United States)

    Bento, A Patrícia; Bickelhaupt, F Matthias

    2007-03-16

    It is textbook knowledge that nucleophilic substitution at carbon (SN2@C) proceeds via a central reaction barrier which disappears in the corresponding nucleophilic substitution reaction at silicon (SN2@Si). Here, we address the question why the central barrier disappears from SN2@C to SN2@Si despite the fact that these processes are isostructural and isoelectronic. To this end, we have explored and analyzed the potential energy surfaces (PES) of various Cl-+CR3Cl (R=H, CH3) and Cl-+SiR3Cl model reactions (R=H, CH3, C2H5, and OCH3). Our results show that the nature of the SN2 reaction barrier is in essence steric, but that it can be modulated by electronic factors. Thus, simply by increasing the steric demand of the substituents R around the silicon atom, the SN2@Si mechanism changes from its regular single-well PES (with a stable intermediate transition complex, TC), via a triple-well PES (with a pre- and a post-TS before and after the central TC), to a double-well PES (with a TS; R=OCH3), which is normally encountered for SN2@C reactions.

  3. Effects of Pt diffusion barrier layer on the interface reaction and electric properties of PZT film/Si ( 111 ) sample

    Institute of Scientific and Technical Information of China (English)

    ZHU, Yong-Fa(朱永法); CAO, Li-Li(曹立礼); YAN, Pei-Yu(阎培渝); LI, Long-Tu(李龙土); YI, Tao(易涛)

    2000-01-01

    The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. The results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx, TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completely interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer must be not thinner than 140 nm. The existence of the Pt layer not only promotes the crystallization of PZT layer to form a perovskite phase but also improves dielectric and ferroelectric performances of the PZT layer.

  4. SiPM application for a detector for UHE neutrinos tested at Sphinx station

    Energy Technology Data Exchange (ETDEWEB)

    Iori, M. [Sapienza University of Rome, Piazzale A. Moro 5, 00185 Rome (Italy); Atakisi, I.O. [University of Kafkas, 36100 Kars (Turkey); Chiodi, G. [INFN, Sezione Roma 1, Piazzale A. Moro 2, 00185 Rome (Italy); Denizli, H. [Abant Izzet Baysal University, 14280 Bolu (Turkey); Ferrarotto, F. [INFN, Sezione Roma 1, Piazzale A. Moro 2, 00185 Rome (Italy); Kaya, M. [University of Kafkas, 36100 Kars (Turkey); Yilmaz, A. [Abant Izzet Baysal University, 14280 Bolu (Turkey); Recchia, L. [INFN, Sezione Roma 1, Piazzale A. Moro 2, 00185 Rome (Italy); Russ, J. [Carnegie-Mellon University, Pittsburgh, PA 15213 (United States)

    2014-04-01

    We present the preliminary test results of the prototype detector, working at Sphinx Observatory Center, Jungfraujoch (∼3800 m a.s.l.) HFSJG – Switzerland. This prototype detector is designed to measure large zenith angle showers produced by high energy neutrino interactions in the Earth crust. This station provides us an opportunity to understand if the prototype detector works safely (or not) under hard environmental conditions (the air temperature changes between −25 °C and −5 °C). The detector prototype is using silicon photomultiplier (SiPM) produced by SensL and DRS4 chip as read-out part. Measurements at different temperature at fixed bias voltage (∼29.5 V) were performed to reconstruct tracks by Time Of Flight.

  5. Optimization of a bolometer detector for ITER based on Pt absorber on SiN membrane.

    Science.gov (United States)

    Meister, H; Eich, T; Endstrasser, N; Giannone, L; Kannamüller, M; Kling, A; Koll, J; Trautmann, T; Detemple, P; Schmitt, S

    2010-10-01

    Any plasma diagnostic in ITER must be able to operate at temperatures in excess of 200 °C and neutron loads corresponding to 0.1 dpa over its lifetime. To achieve this aim for the bolometer diagnostic, a miniaturized metal resistor bolometer detector based on Pt absorbers galvanically deposited on SiN membranes is being developed. The first two generations of detectors featured up to 4.5 μm thick absorbers. Results from laboratory tests are presented characterizing the dependence of their calibration constants under thermal loads up to 450 °C. Several detectors have been tested in ASDEX Upgrade providing reliable data but also pointing out the need for further optimization. A laser trimming procedure has been implemented to reduce the mismatch in meander resistances below 1% for one detector and the thermal drifts from this mismatch.

  6. Optimization of a bolometer detector for ITER based on Pt absorber on SiN membrane

    Energy Technology Data Exchange (ETDEWEB)

    Meister, H.; Eich, T.; Endstrasser, N.; Giannone, L.; Kannamueller, M.; Kling, A.; Koll, J.; Trautmann, T. [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmannstr. 2, D-85748 Garching (Germany); Detemple, P.; Schmitt, S. [Institut fuer Mikrotechnik Mainz GmbH, Carl-Zeiss-Str. 18-20, D-55129 Mainz (Germany); Collaboration: ASDEX Upgrade Team

    2010-10-15

    Any plasma diagnostic in ITER must be able to operate at temperatures in excess of 200 deg. C and neutron loads corresponding to 0.1 dpa over its lifetime. To achieve this aim for the bolometer diagnostic, a miniaturized metal resistor bolometer detector based on Pt absorbers galvanically deposited on SiN membranes is being developed. The first two generations of detectors featured up to 4.5 {mu}m thick absorbers. Results from laboratory tests are presented characterizing the dependence of their calibration constants under thermal loads up to 450 deg. C. Several detectors have been tested in ASDEX Upgrade providing reliable data but also pointing out the need for further optimization. A laser trimming procedure has been implemented to reduce the mismatch in meander resistances below 1% for one detector and the thermal drifts from this mismatch.

  7. IR Imaging Using Arrays of SiO2 Micromechanical Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Grbovic, Dragoslav [ORNL; Lavrik, Nickolay V [ORNL; Rajic, Slobodan [ORNL; Datskos, Panos G [ORNL; Hunter, Scott Robert [ORNL

    2012-01-01

    In this letter, we describe the fabrication of an array of bimaterial detectors for infrared (IR) imaging that utilize SiO2 as a structural material. All the substrate material underneath the active area of each detector element was removed. Each detector element incorporates an optical resonant cavity layer in the IR absorbing region of the sensing element. The simplified microfabrication process requires only four photolithographic steps with no wet etching or sacrificial layers. The thermomechanical deflection sensitivity was 7.9 10-3 rad/K which corresponds to a noise equivalent temperature difference (NETD) of 2.9 mK. In the present work the array was used to capture IR images while operating at room temperature and atmospheric pressure and no need for vacuum packaging. The average measured NETD of our IR detector system was approximately 200 mK but some sensing elements exhibited an NETD of 50 mK.

  8. Phase Transition Sensitive Schottky Barriers In Ga-Si(P Contacts

    Directory of Open Access Journals (Sweden)

    B.P. Modi

    2013-05-01

    Full Text Available Investigation and understanding of Schottky diodes continue to be interesting both for basic as well as technological points of view. Even now the evolutionary aspects of such contacts are not very clearly understood. In this paper it is shown that in respect of interfacial strain contribution to the barrier heights of such contacts semiconductor – liquid metal contacts are relatively better placed than solid semiconductor-solid metal contacts. Results on Ga-Si(p contact are discussed in this paper to show phase sensitive contribution to the barrier height of such Schottky contacts.

  9. FemtoDAQ: A Low-Cost Digitizer for SiPM-Based Detector Studies and its Application to the HAWC Detector Upgrade

    CERN Document Server

    Skulski, Wojtek; BenZvi, Segev

    2016-01-01

    The FemtoDAQ is a low-cost two channel data acquisition system which we have used to investigate the signal characteristics of silicon photomultipliers (SiPMs) coupled to fast scintillators. The FemtoDAQ system can also be used to instrument low cost moderate performance passive detectors, and is suitable for use in harsh environments (e.g., high altitude). The FemtoDAQ is being used as a SiPM test bench for the High Altitude Water Cherenkov (HAWC) Observatory, a TeV gamma ray detector located 4100 m above sea level. Planned upgrades to the HAWC array can benefit greatly from SiPMs, a robust, low-voltage, low-cost alternative to traditional vacuum photomultipliers. The FemtoDAQ is used to power the SiPM detector front end, bias the SiPM, and digitize the photosensor output in a single compact unit.

  10. A conductive surface coating for Si-CNT radiation detectors

    Science.gov (United States)

    Valentini, Antonio; Valentini, Marco; Ditaranto, Nicoletta; Melisi, Domenico; Aramo, Carla; Ambrosio, Antonio; Casamassima, Giuseppe; Cilmo, Marco; Fiandrini, Emanuele; Grossi, Valentina; Guarino, Fausto; Angela Nitti, Maria; Passacantando, Maurizio; Santucci, Sandro; Ambrosio, Michelangelo

    2015-08-01

    Silicon-Carbon Nanotube radiation detectors need an electrically conductive coating layer to avoid the nanotube detachment from the silicon substrate and uniformly transmit the electric field to the entire nanotube active surface. Coating material must be transparent to the radiation of interest, and must provide the drain voltage necessary to collect charges generated by incident photons. For this purpose various materials have been tested and proposed in photodetector and photoconverter applications. In this article interface properties and electrical contact behavior of Indium Tin Oxide films on Carbon Nanotubes have been analyzed. Ion Beam Sputtering has been used to grow the transparent conductive layer on the nanotubes. The films were deposited at room temperature with Oxygen/Argon mixture into the sputtering beam, at fixed current and for different beam energies. Optical and electrical analyses have been performed on films. Surface chemical analysis and in depth profiling results obtained by X-ray Photoelectron Spectroscopy of the Indium Tin Oxide layer on nanotubes have been used to obtain the interface composition. Results have been applied in photodetectors realization based on multi wall Carbon Nanotubes on silicon.

  11. Barrier distribution from 28Si+154Sm quasielastic scattering: Coupling effects in the fusion process

    Directory of Open Access Journals (Sweden)

    Kaur Gurpreet

    2016-01-01

    Full Text Available Barrier distribution for the 28Si+154Sm system has been extracted from large angle quasielastic scattering measurement to investigate the role of various channel couplings on fusion dynamics. The coupled channel calculations, including the collective excitation of the target and projectile, are observed to reproduce the experimental BD rather well. It seems that the role of neutron transfer, relative to collective excitation, is in fact weak in the 28Si+154Sm system even though it has positive Q-value for neutron transfer channels.

  12. The Aachen muon detector prototype. Muon measurement using scintillator tiles with SiPM readout

    Energy Technology Data Exchange (ETDEWEB)

    Meissner, Rebecca; Bretz, Thomas; Hebbeker, Thomas; Lauscher, Markus; Middendorf, Lukas; Niggemann, Tim; Peters, Christine; Schumacher, Johannes [III. Physikalisches Institut A, RWTH Aachen University (Germany); Collaboration: Pierre Auger-Collaboration

    2015-07-01

    Muons being produced in air showers of ultra high energy cosmic rays carry important information on their characteristics such as the mass of the primary particle and the first hadronic interactions at the highest energies. In the context of the Pierre Auger Observatory this upgrade would enable an enhanced primary particle identification as well as the verification of shower simulation models. For this purpose, a simple and robust detector design with scintillator tiles and SiPM readout is being developed, the Aachen Muon Detector (AMD). AMD could be situated below the SD tanks which would provide shielding from the electromagnetic part of the shower. In total, 64 scintillating tiles form the sensitive area of the detector. Wavelength-shifting fibres are inserted into the tiles in sigma-shape to collect the light and are coupled to optical fibres to guide it onto the photosensitive SiPMs. By reading out each SiPM individually, an excellent and low-background performance is expected. Currently the AMD prototype is being built in Aachen and in parallel SiPM and electronics characteristics are being evaluated.

  13. SiD Linear Collider Detector R&D, DOE Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Brau, James E. [Univ. of Oregon, Eugene, OR (United States); Demarteau, Marcel [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-05-15

    The Department of Energy’s Office of High Energy Physics supported the SiD university detector R&D projects in FY10, FY11, and FY12 with no-cost extensions through February, 2015. The R&D projects were designed to advance the SiD capabilities to address the fundamental questions of particle physics at the International Linear Collider (ILC): • What is the mechanism responsible for electroweak symmetry breaking and the generation of mass? • How do the forces unify? • Does the structure of space-time at small distances show evidence for extra dimensions? • What are the connections between the fundamental particles and forces and cosmology? Silicon detectors are used extensively in SiD and are well-matched to the challenges presented by ILC physics and the ILC machine environment. They are fast, robust against machine-induced background, and capable of very fine segmentation. SiD is based on silicon tracking and silicon-tungsten sampling calorimetry, complemented by powerful pixel vertex detection, and outer hadronic calorimetry and muon detection. Radiation hard forward detectors which can be read out pulse by pulse are required. Advanced calorimetry based on a particle flow algorithm (PFA) provides excellent jet energy resolution. The 5 Tesla solenoid is outside the calorimeter to improve energy resolution. PFA calorimetry requires fine granularity for both electromagnetic and hadronic calorimeters, leading naturally to finely segmented silicon-tungsten electromagnetic calorimetry. Since silicon-tungsten calorimetry is expensive, the detector architecture is compact. Precise tracking is achieved with the large magnetic field and high precision silicon microstrips. An ancillary benefit of the large magnetic field is better control of the e⁺e⁻ pair backgrounds, permitting a smaller radius beampipe and improved impact parameter resolution. Finally, SiD is designed with a cost constraint in mind. Significant advances and new capabilities have been made and

  14. Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

    Science.gov (United States)

    Di Bartolomeo, Antonio; Giubileo, Filippo; Luongo, Giuseppe; Iemmo, Laura; Martucciello, Nadia; Niu, Gang; Fraschke, Mirko; Skibitzki, Oliver; Schroeder, Thomas; Lupina, Grzegorz

    2017-03-01

    We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 {{A}} {{{W}}}-1 for white LED light at 3 {{mW}} {{{cm}}}-2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I-V characteristics both in forward and reverse bias.

  15. Effects of Grain Boundary Barrier in ZnO/Si Heterostructure

    Institute of Scientific and Technical Information of China (English)

    LIU Bing-Ce; LIU Ci-Hui; FV Zhu-Xi; Yi Bo

    2009-01-01

    The influence of ZnO microstructure on electrical barriers is investigated using capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) measurements. A deep level center located at EC- 0.24 eV obtained by DLTS in the ZnO films is an intrinsic defect related to Zni. The surface states in the ZnO grains that have acceptor behavior of capturing electrons from Zni defects result in the formation of grain barriers. In addition, we find that the current transport is dominated by grain barriers after annealing at 600°C at O2 ambient. With the increment of the annealing temperature, the current transport mechanism of ZnO/Si heterostructure is mainly dominated by thermo-emission.

  16. Energy and time of flight measurements of REX-ISOLDE stable beams using Si detectors

    CERN Document Server

    Cantero, E D; Fraser, M A; Lanaia, D; Sosa, A; Voulot, D; Zocca, F

    2014-01-01

    In this paper we present energy and time spectroscopy measurements for the stable beams of REX-ISOLDE obtained using Si detectors. By using an alpha source as a calibration reference, the absolute energy E of stable beam particles (A/q = 4) was determined in spectroscopy mode in the energy range 1 MeV < E < 8 MeV (0.30 MeV/u < E/A < 1.87 MeV/u). The time of flight of the beam particles (2.18 MeV/u < E/A < 2.27 MeV/u) was determined by installing identical Si detectors in two diagnostic boxes separated by 7.7 m. The results obtained with these two techniques are compared with the values obtained by dipole scans using a bending magnet. The measurements took place between January and February of 2013.

  17. Performances of 4H-SiC Schottky diodes as neutron detectors

    Science.gov (United States)

    Lo Giudice, Alessandro; Fasolo, Floriana; Durisi, Elisabetta; Manfredotti, Claudio; Vittone, Ettore; Fizzotti, Franco; Zanini, Alba; Rosi, Giancarlo

    2007-12-01

    Large area 4H-SiC Schottky diodes equipped with a 6LiF converter were tested as neutron detectors in the epithermal column realized for Boron Neutron Capture Therapy (BNCT) applications at the fast reactor TAPIRO (ENEA Casaccia Roma). The neutron spectra were assessed using the Monte Carlo code MCNP-4C. The performances of SiC detectors were evaluated with neutron fluences in the range of 10 9-10 13 cm -2 which is typical for BNCT. Spectra of alpha and tritium particles generated by 6Li(n,α) 3H reaction were collected at various neutron fluences and spectra obtained by interposing polyethylene moderators of different thickness. Only weak damaging effects primarily due to the alpha particles were observed; at neutron fluence of 10 13 cm -2 the count rate decreased by <0.3%. The experimental results were compared with the theoretical ones calculated using MCNP-4C and SRIM codes.

  18. Energy Resolution of Large Area Current-mode Si-PIN Detector

    Institute of Scientific and Technical Information of China (English)

    SU; Dan; ZHANG; Guo-guang; WANG; Guo-bao

    2013-01-01

    Large area current-mode Si-PIN detector is fabricated by adopting planar technology.Diameter are ?20 mm,?50 mm,?60 mm,and thickness is 300μm.Energy resolution and peak position of 226Ra-αparticles are measured in the vacuum chamber.The peak energy of the 226Ra-αparticle is 4 784.4,5 304.5,

  19. Application of a-Si:H radiation detectors in medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyoung-Koo

    1995-06-01

    Monte Carlo simulations of a proposed a-Si:H-based current-integrating gamma camera were performed. The analysis showed that the intrinsic resolution of such a camera was 1 {approximately} 2.5 mm, which is somewhat better than that of a conventional gamma camera, and that the greater blurring, due to the detection of scattered {gamma}-rays, could be reduced considerably by image restoration techniques. This proposed gamma camera would be useful for imaging shallow organs such as the thyroid. Prototype charge-storage a-Si:H pixel detectors for such a camera were designed, constructed and tested. The detectors could store signal charge as long as 5 min at {minus}26C. The thermal generation current in reverse biased a-Si:H p-i-n photodetectors was investigated, and the Poole-Frenkel effect was found to be the most significant source of the thermal generation current. Based on the Poole-Frenkel effect, voltage- and time-dependent thermal generation current was modeled. Using the model, the operating conditions of the proposed a-Si:H gamma camera, such as the operating temperature, the operating bias and the {gamma}-scan period, could be predicted. The transient photoconductive gain mechanism in various a-Si:H devices was investigated for applications in digital radiography. Using the a-Si:H photoconductors in n-i-n configuration in pixel arrays, enhancement in signal collection (more than 200 times higher signal level) can be achieved in digital radiography, compared to the ordinary p-i-n type a-Si:H x-ray imaging arrays.

  20. SiC detectors for radiation sources characterization and fast plasma diagnostic

    Science.gov (United States)

    Cannavò, A.; Torrisi, L.

    2016-09-01

    Semiconductor detectors based on SiC have been investigated to characterize the radiations (photons and particles) emitted from different sources, such as radioactive sources, electron guns, X-ray tubes and laser-generated plasmas. Detectors show high response velocity, low leakage current, high energy gap and high radiation hardness. Their high detection efficiency permits to use the detectors in spectroscopic mode and in time-of-flight (TOF) approach, generally employed to monitor low and high radiation fluxes, respectively. Using the laser start signal, they permit to study the properties of the generated plasma in vacuum by measuring accurately the particle velocity and energy using pulsed lasers at low and high intensities. Possible applications will be reported and discussed.

  1. Energy measurement and fragment identification using digital signals from partially depleted Si detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pasquali, G.; Pastore, G.; Barlini, S.; Bini, M.; Poggi, G.; Stefanini, A.A.; Valdre, S. [Universita di Firenze, Dipartimento di Fisica, Sesto Fiorentino (Italy); INFN, Sezione di Firenze, Sesto Fiorentino (Italy); Le Neindre, N.; Bougault, R.; Lopez, O.; Vient, E. [ENSICAEN et Universite de Caen, LPC, IN2P3-CNRS, Caen-Cedex (France); Ademard, G.; Borderie, B.; Edelbruck, P.; Rivet, M.F.; Salomon, F. [Universite Paris-Sud 11, Institut de Physique Nucleaire, CNRS/IN2P3, Orsay cedex (France); Bonnet, E.; Chbihi, A.; Frankland, J.D.; Gruyer, D. [CEA/DSM-CNRS/IN2P3, GANIL, B.P. 5027, Caen cedex (France); Casini, G.; Olmi, A.; Piantelli, S. [INFN, Sezione di Firenze, Sesto Fiorentino (Italy); Cinausero, M.; Gramegna, F.; Marchi, T. [INFN-LNL Legnaro, Legnaro (Padova) (Italy); Duenas, J.A. [FCCEE Universidad de Huelva, Departamento de Fisica Aplicada, Huelva (Spain); Kordyasz, A. [University of Warsaw, Heavy Ion Laboratory, Warsaw (Poland); Kozik, T.; Twarog, T. [Institute of Nuclear Physics IFJ-PAN, Jagiellonian University, Krakow (Poland); Morelli, L. [INFN, Bologna (Italy); Universita di Bologna, Bologna (Italy); Ordine, A. [INFN, Sezione di Napoli, Napoli (Italy); Parlog, M. [ENSICAEN et Universite de Caen, LPC, IN2P3-CNRS, Caen-Cedex (France); ' ' Horia Hulubei' ' National Institute of Physics and Nuclear Engineering, Bucharest (Romania); Rosato, E.; Spadaccini, G. [INFN, Sezione di Napoli, Napoli (Italy); Universita di Napoli ' ' Federico II' ' , Dipartimento di Fisica, Napoli (Italy); Alba, R.; Maiolino, C.; Santonocito, D. [INFN-LNS Catania, Catania (Italy); Collaboration: FAZIA Collaboration

    2014-05-15

    A study of identification properties of a Si-Si ΔE-E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias voltages have been used, one corresponding to full depletion, the others associated with a depleted layer ranging from 90% to 60% of the detector thickness. Fragment identification has been performed using either the ΔE-E technique or the Pulse Shape Analysis (PSA). Both detectors are reverse mounted: particles enter from the low field side, to enhance the PSA performance. The achieved charge and mass resolution has been quantitatively expressed using a Figure of Merit (FoM). Charge collection efficiency has been evaluated and the possibility of energy calibration corrections has been considered. We find that the ΔE-E performance is not affected by incomplete depletion even when only 60% of the wafer is depleted. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds are higher than at full depletion. Good isotopic identification via PSA has been obtained from a partially depleted detector, whose doping uniformity is not good enough for isotopic identification at full depletion. (orig.)

  2. Energy measurement and fragment identification using digital signals from partially depleted Si detectors

    Science.gov (United States)

    Pasquali, G.; Pastore, G.; Le Neindre, N.; Ademard, G.; Barlini, S.; Bini, M.; Bonnet, E.; Borderie, B.; Bougault, R.; Casini, G.; Chbihi, A.; Cinausero, M.; Dueñas, J. A.; Edelbruck, P.; Frankland, J. D.; Gramegna, F.; Gruyer, D.; Kordyasz, A.; Kozik, T.; Lopez, O.; Marchi, T.; Morelli, L.; Olmi, A.; Ordine, A.; Pârlog, M.; Piantelli, S.; Poggi, G.; Rivet, M. F.; Rosato, E.; Salomon, F.; Spadaccini, G.; Stefanini, A. A.; Valdrè, S.; Vient, E.; Twaróg, T.; Alba, R.; Maiolino, C.; Santonocito, D.

    2014-05-01

    A study of identification properties of a Si-Si ΔE- E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias voltages have been used, one corresponding to full depletion, the others associated with a depleted layer ranging from 90% to 60% of the detector thickness. Fragment identification has been performed using either the ΔE- E technique or the Pulse Shape Analysis (PSA). Both detectors are reverse mounted: particles enter from the low field side, to enhance the PSA performance. The achieved charge and mass resolution has been quantitatively expressed using a Figure of Merit (FoM). Charge collection efficiency has been evaluated and the possibility of energy calibration corrections has been considered. We find that the ΔE- E performance is not affected by incomplete depletion even when only 60% of the wafer is depleted. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds are higher than at full depletion. Good isotopic identification via PSA has been obtained from a partially depleted detector, whose doping uniformity is not good enough for isotopic identification at full depletion.

  3. Fabrication of double barrier structures in single layer c-Si-QDs/a-SiOx films for realization of energy selective contacts for hot carrier solar cells

    Science.gov (United States)

    Kar, Debjit; Das, Debajyoti

    2017-01-01

    Thin films of c-Si-QDs embedded in an a-SiOx dielectric matrix forming arrays of double barrier structures have been fabricated by reactive rf-magnetron sputtering at ˜400 °C, without post-deposition annealing. The formation of larger size c-Si-QDs of reduced number density in homogeneous distribution within a less oxygenated a-SiOx matrix at higher plasma pressure introduces systematic widening of the average periodic distance between the adjacent `c-Si-QDs in a-SiOx', as obtained by X-ray reflectivity and transmission electron microscopy studies. A wave-like pattern in the J-E characteristics identifies the formation of periodic double-barrier structures along the path of the movement of charge carriers across the QDs and that those are originated by the a-SiOx dielectric matrix around the c-Si-QDs. A finite distribution of the size of c-Si-QDs introduces a broadening of the current density peak and simultaneously originates the negative differential resistance-like characteristics, which have suitable applications in the energy selective contacts that act as energy filters for hot carrier solar cells. A simple yet effective process technology has been demonstrated. Further initiative on tuning the energy selectivity by reducing the size and narrowing the size-distribution of Si-QDs can emerge superior energy selective contacts for hot carrier solar cells, paving ground for accomplishing all-Si solar cells.

  4. Influence of solvothermal synthesis conditions in BiSI nanostructures for application in ionizing radiation detectors

    Science.gov (United States)

    Aguiar, I.; Mombrú, M.; Pérez Barthaburu, M.; Bentos Pereira, H.; Fornaro, L.

    2016-02-01

    BiSI belongs to the A V B VI C VII chalcohalides group of compounds. These compounds show several interesting properties such as ferroelectricity, piezoelectricity along the c axis, and photoconductivity. Moreover, BiSI is a potential semiconductor material for room-temperature gamma and x-ray detection, given its band gap of 1.57 eV and its high density, 6.41 g cm-3. In this work we present BiSI nanostructures synthesized by the solvothermal method with the intention of using them for ionizing radiation detection. The solvent was varied to study its influence in morphology, particle size and size distribution. Three different conditions were tested, using either water, monoethylene glycol and a mixture of both solvents. Nanostructures were characterized by XRD to determine the phase obtained and reaction completeness; TEM was used to observe nanostructures morphology, size, size distribution and crystallinity; and finally FT-IR diffuse reflectance was used to study monoethylene glycol presence in the samples. Nanorods in the range of 100-200 nm width were obtained in all samples, but round nanoparticles of around 10 nm in diameter were also detected in samples synthesized only with monoethylene glycol. Samples synthesized in monoethylene glycol were used to fabricate pellets to construct detectors. The detectors responded to ionizing radiation and a resistivity in the order of 1013 Ω cm was estimated. This work proposes, to our knowledge, the first study of BiSI for its application in ionizing radiation detection.

  5. Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra...

  6. Extracting information from partially depleted Si detectors with digital sampling electronics

    Directory of Open Access Journals (Sweden)

    Pastore G.

    2015-01-01

    Full Text Available A study of the identification properties and of the energy response of a Si-Si-CsI(Tl ΔE-E telescope exploiting a partially depleted second Si stage has been performed. Five different bias voltages have been applied to the second stage of the telescope, one corresponding to full depletion, the others associated with a depleted layer ranging from 60% to 90% of the detector thickness. Fragment identification has been obtained using either the ΔE-E technique or the Pulse Shape Analysis (PSA. Charge collection efficiency has been evaluated. The ΔE-E performance is not affected by incomplete depletion. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds increase.

  7. Development of SciFi/CheFi detector with SiPM readout

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Ken [Stefan Meyer Institute, Boltzmanngasse 3, 1090 Vienna (Austria)], E-mail: ken.suzuki@oeaw.ac.at; Buehler, Paul; Fossati, Stefan; Marton, Johann; Schafhauser, Matthias; Zmeskal, Johann [Stefan Meyer Institute, Boltzmanngasse 3, 1090 Vienna (Austria)

    2009-10-21

    A Multi-pixel Geiger-mode APD, often called a Silicon Photomultiplier (SiPM), is a new type of photon counting device made up of multiple APD pixels operated in the Geiger-mode, which started to replace the PMT in a certain parts of photodetection field. Stefan Meyer Institute in Vienna has been working on an evaluation of several kinds of SiPMs from different manufacturers with different sizes of cells, sensitive area. We operate SiPMs in combination with scintillating fiber and Cherenkov radiator to test its potential with special focus on its timing performance, compactness and low-cost. The detectors are going to be applied in experiments like FOPI, AMADEUS and PANDA.

  8. Radiation detector based on 4H-SiC used for thermal neutron detection

    Science.gov (United States)

    Zaťko, B.; Šagátová, A.; Sedlačková, K.; Boháček, P.; Sekáčová, M.; Kohout, Z.; Granja, C.; Nečas, V.

    2016-11-01

    In this work we have focused on detection of thermal neutrons generated by 239Pu-Be isotopic neutron source. A high quality liquid phase epitaxial layer of 4H-SiC was used as a detection region. The thickness of the layer was 70 μ m and the diameter of circular Au/Ni Schottky contact was 4.5 mm. Around the Schottky contact two guard rings were created. The detector structure was first examined as a detector of protons and alpha particles for energy calibration. Monoenergetic protons of energies from 300 keV up to 1.9 MeV were used for detector energy calibration and a good linearity was observed. The energy resolution of 35 keV was obtained for 1.9 MeV protons. The 6LiF conversion layer was applied on the detector Schottky contact. In the experiment we used different thicknesses of conversion layers from 5 μ m up to 35 μ m. Measured detected spectra show two parts corresponding to alpha particles detection in lower energy channels and 3H in higher energy channels. We have also performed simulations of thermal neutron detection using MCNPX (Monte Carlo N-particle eXtended) code. The detection efficiency and the detector response to thermal neutrons was calculated with respect to the 6LiF layer thickness. The detection efficiency calculation is found to be in good agreement with the experiment.

  9. Timing performance measurements of Si-PM-based LGSO phoswich detectors

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Seiichi [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine, Nagoya (Japan); Kobayashi, Takahiro [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine, Nagoya (Japan); Department of Radiology, Daiyukai General Hospital, Ichinomiya (Japan); Okumura, Satoshi [Radiological and Medical Laboratory Sciences, Nagoya University Graduate School of Medicine, Nagoya (Japan); Yeom, Jung Yeol [Department of Biomedical Engineering, Korea University, Seoul (Korea, Republic of)

    2016-06-11

    Since the timing resolution was significantly improved using silicon photomultipliers (Si-PMs) combined with fast scintillators, we expect that phoswich detectors will be used in future TOF-PET systems. However, no practical phoswich detector has been proposed for TOF-PET detectors. We conducted timing performance measurements of phoswich detectors comprised of two types of Ce-doped LGSO scintillators with different decay times coupled to Si-PMs and digitized the output signals using a high bandwidth digital oscilloscope. We prepared three types of LGSOs (LGSO-fast, LGSO-standard, and LGSO-slow) with different Ce concentrations. After measuring the decay time, the energy performance, and the timing performance of each LGSO, we conducted pulse shape analysis and timing resolution measurements for two versions of phoswich LGSOs: LGSO-standard/LGSO-fast and LGSO-slow/LGSO-fast combinations. The pulse shape spectra for a 10-mm-long crystal LGSO-slow/LGSO-fast combination showed good separation of the front and back crystals with a peak-to-valley ratio of 2.0. The timing resolutions for the 20-mm-long crystal LGSO-slow/LGSO-fast combination were ~300 ps FWHM. The timing resolutions for the phoswich LGSOs were slightly inferior than that measured with the individual LGSO fast, but the acquired timing resolution for the phoswich configuration, ~300 ps with a LGSO-slow/LGSO-fast combination, is adequate for TOF-PET systems. We conclude that LGSO phoswich detectors are promising for TOF-DOI-PET systems.

  10. Radiation effects on floating rings of voltage terminating structure in Si p-on-n detectors

    Energy Technology Data Exchange (ETDEWEB)

    Eremin, V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Egorov, N. [Research Institute of Material Science and Technology, 124460 Zelenograd, Moscow (Russian Federation); Eremin, I. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Fadeeva, N. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Saint Petersburg Electrotechnical University “LETI”, 197376 St. Petersburg (Russian Federation); Verbitskaya, E., E-mail: elena.verbitskaya@cern.ch [Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

    2013-12-01

    In the 1990s a suggestion was put forward that the space charge limited current mechanism is responsible for stabilization of the I–V characteristics in irradiated Si p-on-n detectors. This mechanism is switched on in the case of high concentration of radiation induced deep traps which via holes accumulation will reduce the electric field in the regions of breakdown. The present study shows that voltage terminating structure (VTS) consisting of the floating p{sup +} rings as a main element for stabilization of I–V characteristics in nonirradiated detectors is still active being irradiated to the fluence beyond space charge sign inversion. This characteristic of VTS can be accounted for by the double peak electric field distribution in heavily irradiated detectors and the punch-through mechanism of current flow between the floating p{sup +} rings in the silicon bulk with high concentration of deep traps. It is shown that VTS operates as a potential divider up to the fluence of 1×10{sup 15} n{sub eq}/cm{sup 2} and it is at higher fluences that the detector stability is maintained only by the space charge limited current mechanism. -- Highlights: •Voltage terminating structure (VTS) operation in Si irradiated detector is studied. •Ring potentials and interring I–V characteristics are measured up to 1×10{sup 15} n{sub eq}/cm{sup 2}. •Double peak electric field maintains VTS action after space charge sign inversion. •VTS operates as a potential divider up to fluence 5×10{sup 14} n{sub eq}/cm{sup 2}. •At fluence 1×10{sup 15} n{sub eq}/cm{sup 2} VTS operation fails and it operates as a single ring.

  11. Timing performance measurements of Si-PM-based LGSO phoswich detectors

    Science.gov (United States)

    Yamamoto, Seiichi; Kobayashi, Takahiro; Okumura, Satoshi; Yeom, Jung Yeol

    2016-06-01

    Since the timing resolution was significantly improved using silicon photomultipliers (Si-PMs) combined with fast scintillators, we expect that phoswich detectors will be used in future TOF-PET systems. However, no practical phoswich detector has been proposed for TOF-PET detectors. We conducted timing performance measurements of phoswich detectors comprised of two types of Ce-doped LGSO scintillators with different decay times coupled to Si-PMs and digitized the output signals using a high bandwidth digital oscilloscope. We prepared three types of LGSOs (LGSO-fast, LGSO-standard, and LGSO-slow) with different Ce concentrations. After measuring the decay time, the energy performance, and the timing performance of each LGSO, we conducted pulse shape analysis and timing resolution measurements for two versions of phoswich LGSOs: LGSO-standard/LGSO-fast and LGSO-slow/LGSO-fast combinations. The pulse shape spectra for a 10-mm-long crystal LGSO-slow/LGSO-fast combination showed good separation of the front and back crystals with a peak-to-valley ratio of 2.0. The timing resolutions for the 20-mm-long crystal LGSO-slow/LGSO-fast combination were ~300 ps FWHM. The timing resolutions for the phoswich LGSOs were slightly inferior than that measured with the individual LGSO fast, but the acquired timing resolution for the phoswich configuration, ~300 ps with a LGSO-slow/LGSO-fast combination, is adequate for TOF-PET systems. We conclude that LGSO phoswich detectors are promising for TOF-DOI-PET systems.

  12. Laser plasma ion implantation and deposition of platinum for SiC-based hydrogen detector fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Fominski, V. Yu., E-mail: vyfominskij@mephi.ru [National Research Nuclear University MEPhI, Kashirskoe sh., 31, Moscow 115409 (Russian Federation); Grigoriev, S.N. [Moscow State University of Technology STANKIN, Vadkovskii per., 3a, Moscow 127005 (Russian Federation); Romanov, R.I. [National Research Nuclear University MEPhI, Kashirskoe sh., 31, Moscow 115409 (Russian Federation); Gnedovets, A.G. [Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Leninsky Prospect 49, Moscow 119991 (Russian Federation); Chernykh, P.N. [Lomonosov Moscow State University Scobeltsyn Institute of Nuclear Physics, 1(2) Leninskie Gory, GSP-1, Moscow 119991 (Russian Federation)

    2013-10-15

    Highlights: •Pt ion implantation and film deposition were carried out using pulsed laser plume. •Experimental diagnostics and modeling of Pt ion implantation in SiC were performed. •Mechanism of Pt depth distribution in SiC substrate was determined. •Layered structure of Pt on Pt-doped SiC crystal was used to detect hydrogen at 500 °C. •The response of sensor to hydrogen was pronounced and stable after long-term tests. -- Abstract: A pulsed plasma plume obtained by pulsed laser irradiation of a Pt target was used to fabricate a hydrogen sensor on a 6H–SiC single crystal by means of ion implantation followed by thin film deposition. To realize the ion implantation, high voltage pulses with positive polarity were applied to the Pt target when the laser plasma expanded from the target to the SiC substrate. Experimental diagnostics of pulsed ion beams extracted from laser-produced plasma were performed and the structure of the SiC crystal after high-temperature (500 °C) ion implantation was studied by Rutherford backscattering spectroscopy of {sup 4}He{sup +} ions. At the same time, a one-dimensional model of the plasma movement in a pulsed electric field was developed and simulations were carried out using the particle-in-cell method. Modeling allowed determination of the ion energy distribution depending on the delay time of the high voltage pulse after the laser pulse. The calculated energy distribution of Pt ions was used to predict the depth profile of implanted Pt ions in the SiC substrate. The predicted profile agreed sufficiently well with the experimentally measured depth distribution of Pt in the SiC substrate. To characterize the fabricated SiC sensor, the current flow through a barrier structure was studied. The volt–ampere characteristics of the structure were measured in air and in a mixture of air and hydrogen (2%) at a temperature of 500 °C. The characteristic value of the change in voltage exceeded 2 V at the bias current of 1 mA when

  13. Signal and noise analysis of a-Si:H radiation detector-amplifier system

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gyuseong.

    1992-03-01

    Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was {approximately}400 MHz and the noise charge {approximately}1000 electrons at a 1 {mu}sec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of {approximately}0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

  14. Optimized design of 4H-SiC floating junction power Schottky barrier diodes

    Institute of Scientific and Technical Information of China (English)

    Pu Hongbin; Cao Lin; Chen Zhiming; Ren Jie

    2009-01-01

    SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics.Compared with the conventional power Schottky barrier diode,the device structure is featured by a highly doped drift region and embedded floating junction region,which can ensure high breakdown voltage while keeping lower specific on-state resistance,solved the contradiction between forward voltage drop and breakdown voltage.The simulation results show that with optimized structure parameter,the breakdown voltage Can reach 4 kV and the specific on-resistance is 8.3 mΩ·cm2.

  15. High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS)

    Science.gov (United States)

    Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mannan, Mohammad A.; Mandal, Krishna C.

    2015-08-01

    High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 samples. The metal-semiconductor junctions were fabricated by photolithography and dc sputtering with ruthenium (Ru). The junction properties were characterized through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Detectors were characterized by alpha spectroscopy measurements in terms of energy resolution and charge collection efficiency using a 0.1 μCi 241Am radiation source. It was found that detectors fabricated from high work function rare transition metal Ru demonstrated very low leakage current and significant improvement of detector performance. Defect characterization of the epitaxial layers was conducted by deep level transient spectroscopy (DLTS) to thoroughly investigate the defect levels in the active region. The presence of a new defect level induced by this rare transition metal-semiconductor interface has been identified and characterized.

  16. Design Optimization of Pixel Structure for α-Si based Uncooled Infrared Detector

    Directory of Open Access Journals (Sweden)

    Sudha Gupta

    2013-11-01

    Full Text Available In this paper authors present the design and simulation results achieved for pixel structure of amorphous Si (α-Si based bolometer array. Most uncooled IR detectors in the world are based on VOx material. But this is not a standard material in IC technology and has many inherent disadvantages. The α-Si, an alternative material with high TCR is becoming as popular. However, large TCR values, in this material are achieved only in films of high resistivity. To achieve TCR value more than 2.5%/K, α-Si film resistivity is ~ 80 ohms-cm. This gives rise to very large pixel resistance of the order of 100 Mega ohms depending upon the design of the leg structure. This high pixel resistance causes very large noise and hence lower sensitivity. If leg width or membrane thickness is increased in order to reduce the pixel resistance, then this results in higher thermal conductance which also decreases sensitivity. To overcome this problem, pixel structure is so designed that within a pixel, only part of the electrical conduction is through α-Si and rest is through metal. Simulation using Coventorware software has been done to optimize pixel resistance as well as thermal conductance through legs so that maximum sensitivity could be obtained. Optimization is also carried out in order to reduce sensitivity of pixel resistance to variation in material resistivity.

  17. MCNPX Monte Carlo simulations of particle transport in SiC semiconductor detectors of fast neutrons

    Science.gov (United States)

    Sedlačková, K.; Zat'ko, B.; Šagátová, A.; Pavlovič, M.; Nečas, V.; Stacho, M.

    2014-05-01

    The aim of this paper was to investigate particle transport properties of a fast neutron detector based on silicon carbide. MCNPX (Monte Carlo N-Particle eXtended) code was used in our study because it allows seamless particle transport, thus not only interacting neutrons can be inspected but also secondary particles can be banked for subsequent transport. Modelling of the fast-neutron response of a SiC detector was carried out for fast neutrons produced by 239Pu-Be source with the mean energy of about 4.3 MeV. Using the MCNPX code, the following quantities have been calculated: secondary particle flux densities, reaction rates of elastic/inelastic scattering and other nuclear reactions, distribution of residual ions, deposited energy and energy distribution of pulses. The values of reaction rates calculated for different types of reactions and resulting energy deposition values showed that the incident neutrons transfer part of the carried energy predominantly via elastic scattering on silicon and carbon atoms. Other fast-neutron induced reactions include inelastic scattering and nuclear reactions followed by production of α-particles and protons. Silicon and carbon recoil atoms, α-particles and protons are charged particles which contribute to the detector response. It was demonstrated that although the bare SiC material can register fast neutrons directly, its detection efficiency can be enlarged if it is covered by an appropriate conversion layer. Comparison of the simulation results with experimental data was successfully accomplished.

  18. EUV detectors based on AlGaN-on-Si Schottky photodiodes

    Science.gov (United States)

    Malinowski, P. E.; Duboz, J.-Y.; De Moor, P.; Minoglou, K.; John, J.; Srivastava, P.; Semond, F.; Frayssinet, E.; BenMoussa, A.; Giordanengo, B.; Van Hoof, C.; Mertens, R.

    2011-05-01

    Photodetectors designed for the Extreme Ultraviolet (EUV) range with the Aluminum Gallium Nitride (AlGaN) active layer are reported. AlGaN layers were grown by Molecular Beam Epitaxy (MBE) on Si(111) wafers. Different device structures were designed and fabricated, including single pixel detectors and 2D detector arrays. Sensitivity in different configurations was demonstrated, including front- and backside illumination. The latter was possible after integration of the detector chips with dedicated Si-based readouts using high-density In bump arrays and flip-chip bonding. In order to avoid radiation absorption in silicon, the substrate was removed, leaving a submicron-thin membrane of AlGaN active layer suspended on top of an array of In bumps. Optoelectrical characterization was performed using different UV light sources, also in the synchrotron beamlines providing radiation down to the EUV range. The measured cut-off wavelength of the active layer used was 280 nm, with a rejection ratio of the visible radiation above 3 orders of magnitude. Spectral responsivity and quantum efficiency values

  19. Development of an ASIC for Si/CdTe detectors in a radioactive substance visualizing system

    Science.gov (United States)

    Harayama, Atsushi; Takeda, Shin`ichiro; Sato, Goro; Ikeda, Hirokazu; Watanabe, Shin; Takahashi, Tadayuki

    2014-11-01

    We report on the recent development of a 64-channel analog front-end ASIC for a new gamma-ray imaging system designed to visualize radioactive substances. The imaging system employs a novel Compton camera which consists of silicon (Si) and cadmium telluride (CdTe) detectors. The ASIC is intended for the readout of pixel/pad detectors utilizing Si/CdTe as detector materials, and covers a dynamic range up to 1.4 MeV. The readout chip consists of 64 identical signal channels and was implemented with X-FAB 0.35 μm CMOS technology. Each channel contains a charge-sensitive amplifier, a pole-zero cancellation circuit, a low-pass filter, a comparator, and a sample-hold circuit, along with a Wilkinson-type A-to-D converter. We observed an equivalent noise charge of 500 e- and a noise slope of 5 e-/pF (r.m.s.) with a power consumption of 2.1 mW per channel. The chip works well when connected to Schottky CdTe diodes, and delivers spectra with good energy resolution, such as 12 keV (FWHM) at 662 keV and 24 keV (FWHM) at 1.33 MeV.

  20. Development of an ASIC for Si/CdTe detectors in a radioactive substance visualizing system

    Energy Technology Data Exchange (ETDEWEB)

    Harayama, Atsushi, E-mail: harayama@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510 (Japan); Takeda, Shin' ichiro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510 (Japan); Sato, Goro [RIKEN Nishina Center, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510 (Japan); Ikeda, Hirokazu; Watanabe, Shin; Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Sagamihara, Kanagawa 229-8510 (Japan)

    2014-11-21

    We report on the recent development of a 64-channel analog front-end ASIC for a new gamma-ray imaging system designed to visualize radioactive substances. The imaging system employs a novel Compton camera which consists of silicon (Si) and cadmium telluride (CdTe) detectors. The ASIC is intended for the readout of pixel/pad detectors utilizing Si/CdTe as detector materials, and covers a dynamic range up to 1.4 MeV. The readout chip consists of 64 identical signal channels and was implemented with X-FAB 0.35μm CMOS technology. Each channel contains a charge-sensitive amplifier, a pole-zero cancellation circuit, a low-pass filter, a comparator, and a sample-hold circuit, along with a Wilkinson-type A-to-D converter. We observed an equivalent noise charge of ∼500 e{sup −} and a noise slope of ∼5 e{sup −}/pF (r.m.s.) with a power consumption of 2.1 mW per channel. The chip works well when connected to Schottky CdTe diodes, and delivers spectra with good energy resolution, such as ∼12 keV (FWHM) at 662 keV and ∼24 keV (FWHM) at 1.33 MeV.

  1. Dielectric barrier discharge molecular emission spectrometer as multichannel GC detector for halohydrocarbons.

    Science.gov (United States)

    Li, Wei; Zheng, Chengbin; Fan, Guangyu; Tang, Li; Xu, Kailai; Lv, Yi; Hou, Xiandeng

    2011-07-01

    A novel microplasma molecular emission spectrometer based on an atmospheric pressure dielectric barrier discharge (DBD) is described and further used as a promising multichannel GC detector for halohydrocarbons. The plasma is generated in a DBD device consisting of an outer electrode (1.2 mm in diameter) and an inner electrode (1.7 mm in diameter) within a small quartz tube (3.0 mm i.d. × 5.0 mm o.d. × 50 mm), wherein analyte molecules are excited by the microplasma to generate molecular emission. Therefore, the analytes are selectively and simultaneously detected with a portable charge-coupled device (CCD) via multichannel detection of their specific emission lines. The performance of this method was evaluated by separation and detection of a model mixture of chlorinated hydrocarbons (CHCl(3) and CCl(4)), brominated hydrocarbons (CH(2)Br(2) and CH(2)BrCH(2)Br), and iodinated hydrocarbons (CH(3)I and (CH(3))(2)CHI) undergoing GC with the new detector. The completely resolved identification of the tested compounds was achieved by taking advantages of both chromatographic and spectral resolution. Under the optimized conditions with the CCD spectrometer set at 258, 292, and 342 nm channels for determination of chlorinated hydrocarbons, brominated hydrocarbons, and iodinated hydrocarbons, respectively, this detector with direct injection provided detection limits of 0.07, 0.06, 0.3, 0.04, 0.05, and 0.02 μg mL(-1) for CCl(4), CHCl(3), CH(2)Cl(2), CH(3)I, CH(3)CH(2)I, and (CH(3))(2)CHI, respectively.

  2. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode*

    Institute of Scientific and Technical Information of China (English)

    Chen Fengping; Zhang Yuming; Lü Hongliang; Zhang Yimen; Guo Hui; Guo Xin

    2011-01-01

    4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent Ptype ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively.Furthermore, the P-type ohmic contact is studied in this work.

  3. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Chen Fengping; Zhang Yuming; Lue Hongliang; Zhang Yimen; Guo Hui; Guo Xin, E-mail: fpchen@yeah.net [School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi' an 710071 (China)

    2011-06-15

    4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work. (semiconductor devices)

  4. Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

    Science.gov (United States)

    Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

    1992-01-01

    SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

  5. The residual stress instrument with optimized Si(220) monochromator and position-sensitive detector at HANARO

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chang-Hee [Korea Atomic Energy Research Institute, Yusung, Daejon 305-600 (Korea, Republic of); Moon, Myung-Kook [Korea Atomic Energy Research Institute, Yusung, Daejon 305-600 (Korea, Republic of)]. E-mail: moonmk@kaeri.re.kr; Em, Vyacheslav T. [Korea Atomic Energy Research Institute, Yusung, Daejon 305-600 (Korea, Republic of); Choi, Young-Hyun [Korea Atomic Energy Research Institute, Yusung, Daejon 305-600 (Korea, Republic of); Cheon, Jong-Kyu [Korea Atomic Energy Research Institute, Yusung, Daejon 305-600 (Korea, Republic of); Nam, Uk-Won [Korea Astronomy Observatory, Yusung, Daejon 305-348 (Korea, Republic of); Kong, Kyung-Nam [Korea Astronomy Observatory, Yusung, Daejon 305-348 (Korea, Republic of)

    2005-06-11

    An upgraded residual stress instrument at the HANARO reactor of the KAERI is described. A horizontally focusing bent perfect crystal Si(220) monochromator (instead of a mosaic vertical focusing Ge monochromator) is installed in a drum with a tunable (2{theta}{sub M}=0-60{sup o}) take-off angle/wavelength. A specially designed position-sensitive detector (60% efficiency for {lambda}=1.8A) with 200mm (instead of 100mm) high-active area is used. There are no Soller type collimators in the instrument. The minimum possible monochromator to sample distance, L{sub MS}=2m, and sample to detector distance, L{sub SD}=1.2m, were found to be optimal. The new PSD and bent Si(220) monochromator combined with the possibility of selecting an appropriate wavelength resulted in about a ten-fold gain in data collection rate. The optimal reflections of austenitic and ferritic steels, aluminum and nickel for stress measurements with a Si(220) monochromator were chosen experimentally. The ability of the instrument to make strain measurements deep inside the austenitic and ferritic steels has been tested. For the chosen reflections and wavelengths, no shift of peak position (apparent strain) was observed up to 56mm length of path.

  6. The modulation of Schott ky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique

    Institute of Scientific and Technical Information of China (English)

    An Xia; Fan Chun-Hui; Huang Ru; Guo Yue; Xu Cong; Zhang Xing; Wang Yang-Yuan

    2009-01-01

    This paper reports that the Schottky barrier height modulation of NiSi/n-si is experimentally investigated by adopting a novel silicide-as-diffusion-source technique. which avoids the damage to the NiSi/Si interface induced from the conventional dopant segregation method. In addition, the impact of post-BF_2 implantation after silicidation on the surface morphology of Ni silicides is also illustrated. The thermal stability of Ni silicides can be improved by sihcideas-diffusion-source technique. Besides, the electron Schottky barrier height is successfully modulated by 0.11 eV at a boron dose of 10~(15) cm~(-2) in comparison with the non. implanted samples. The change of barrier height is not attributed to the phase change of silicide films but due to the boron pile-up at the interface of NiSi and Si substrate which causes the upward bending of conducting band. The results demonstrate the feasibility of novel silicide-as-diffusion-source technique for the fabrication of Schottky source/drain Si MOS devices.

  7. SiPMs characterization and selection for the DUNE far detector photon detection system

    CERN Document Server

    Sun, Yujing

    2015-01-01

    The Deep Underground Neutrino Experiment (DUNE) together with the Long Baseline Neutrino Facility (LBNF) hosted at the Fermilab will provide a unique, world-leading program for the exploration of key questions at the forefront of neutrino physics and astrophysics. CP violation in neutrino flavor mixing is one of its most important potential discoveries. Additionally, the experiment will determine the neutrino mass hierarchy and precisely measure the neutrino mixing parameters which may potentially reveal new fundamental symmetries of nature. Moreover, the DUNE is also designed for the observation of nucleon decay and supernova burst neutrinos. The photon detection (PD) system in the DUNE far detector provides trigger for cosmic backgrounds, enhances supernova burst trigger efficiency and improves the energy resolution of the detector. The DUNE adopts the technology of liquid argon time projection chamber (LArTPC) that requires the PD sensors, silicon photomultipliers (SiPM), to be carefully chosen to not only...

  8. Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO{sub 2} barrier layers

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yingtian [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China); State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022 (China); Xu, Li [State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022 (China); Dai, Jun [State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China); Ma, Yan; Chu, Xianwei; Zhang, Yuantao; Du, Guotong; Zhang, Baolin; Yin, Jingzhi, E-mail: yjz886666@163.com [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2015-05-25

    This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO{sub 2} barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO{sub 2} barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO{sub 2} layer. The intense UV emission in the n-ZnO SMW/SiO{sub 2}/p-Si heterojunction indicated that the SiO{sub 2} barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.

  9. Electrode thickness measurement of a Si(Li) detector for the SIXA array

    OpenAIRE

    Tikkanen, T. (Tiia); Hamalainen, K.; Huotari, S.

    1997-01-01

    Cathode electrodes of the Si(Li) detector elements of the SIXA X-ray spectrometer array are formed by gold-palladium alloy contact layers. The equivalent thickness of gold in one element was measured by observing the characteristic L-shell X-rays of gold excited by monochromatised synchrotron radiation with photon energies above the L3 absorption edge of gold. The results obtained at 4 different photon energies below the L2 edge yield an average value of 22.4(35) nm which is consistent with t...

  10. Radiation stability of SiC-ion detectors to exposure by relativistic protons

    CERN Document Server

    Ivanov, A M; Davydov, D V; Savkina, N S; Lebedev, A A; Mironov, Y T; Ryabov, G A; Ivanov, E M

    2001-01-01

    Schottky diodes based on 6H-SiC epitaxial films are used. The structures are exposed to dose 3 x 10 sup 1 sup 4 cm sup - sup 2 of 1000 MeV protons. The effect of high energy protons is studied by means of precise alpha-spectrometry. Parameters of deep levels induced by protons are measured using the deep-level transient spectroscopy. The number of vacancies arising in the track of 1000 and 8 MeV proton is determined by TRIM program. Thickness of space charge region and the diffusion length for holes is determined before and after irradiation by fitting the experimental result of alpha-spectrometry and capacitance measurements. The results show insignificant changes of charges transport properties in SiC detectors

  11. Monte Carlo semi-empirical model for Si(Li) x-ray detector: Differences between nominal and fitted parameters

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Pino, N.; Padilla-Cabal, F.; Garcia-Alvarez, J. A.; Vazquez, L.; D' Alessandro, K.; Correa-Alfonso, C. M. [Departamento de Fisica Nuclear, Instituto Superior de Tecnologia y Ciencias Aplicadas (InSTEC) Ave. Salvador Allende y Luaces. Quinta de los Molinos. Habana 10600. A.P. 6163, La Habana (Cuba); Godoy, W.; Maidana, N. L.; Vanin, V. R. [Laboratorio do Acelerador Linear, Instituto de Fisica - Universidade de Sao Paulo Rua do Matao, Travessa R, 187, 05508-900, SP (Brazil)

    2013-05-06

    A detailed characterization of a X-ray Si(Li) detector was performed to obtain the energy dependence of efficiency in the photon energy range of 6.4 - 59.5 keV, which was measured and reproduced by Monte Carlo (MC) simulations. Significant discrepancies between MC and experimental values were found when the manufacturer parameters of the detector were used in the simulation. A complete Computerized Tomography (CT) detector scan allowed to find the correct crystal dimensions and position inside the capsule. The computed efficiencies with the resulting detector model differed with the measured values no more than 10% in most of the energy range.

  12. Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction

    Science.gov (United States)

    Gui-fang, Li; Jing, Hu; Hui, Lv; Zhijun, Cui; Xiaowei, Hou; Shibin, Liu; Yongqian, Du

    2016-02-01

    We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co2MnSi and the germanium (Ge) channel modulates the Schottky barrier height and the resistance-area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height (SBH) occurs following the insertion of the graphene layer between Co2MnSi and Ge. The electron SBH is modulated in the 0.34 eV-0.61 eV range. Furthermore, the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility. Project supported by the National Natural Science Foundation of China (Grant No. 61504107) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 3102014JCQ01059 and 3102015ZY043).

  13. Simulation of near-infrared photodiode detectors based onβ-FeSi2/4H-SiC heterojunctions

    Institute of Scientific and Technical Information of China (English)

    Pu Hong-Bin; He Xin; Quan Ru-Dai; Cao Lin; Chen Zhi-Ming

    2013-01-01

    In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi2) as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type/β-FeSi2 absorption layer with a doping concentration of 1 x 1015 cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the/β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.

  14. The Development of Environmental Barrier Coatings for SiCSiC Ceramic Matrix Composites: Challenges and Opportunities

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Environmental barrier coatings (EBCs) and SiC/SiC ceramic matrix composites (CMCs) systems will play a crucial role in future turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is a key to enable the applications of the envisioned CMC components to help achieve next generation engine performance and durability goals. This paper will primarily address the performance requirements and design considerations of environmental barrier coatings for turbine engine applications. The emphasis is placed on current candidate environmental barrier coating systems for SiCSiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. Major technical barriers in developing advanced environmental barrier coating systems, the coating integrations with next generation CMC turbine components having improved environmental stability, cyclic durability and system performance will be described. The development trends for turbine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be discussed.

  15. Initial testing of a Si:As blocked-impurity-band (BIB) trap detector

    Science.gov (United States)

    Woods, Solomon I.; Kaplan, Simon G.; Jung, Timothy M.; Carter, Adriaan C.; Proctor, James E.

    2012-06-01

    We discuss the design, construction, and initial test results of a Si:As blocked-impurity-band (BIB) trap detector. The trap consists of two rectangular BIB devices configured in a v-shaped geometry. This trapping geometry is designed to ideally yield a minimum of 7 bounces before exit for incident light within an f/4 cone with 3 mm clear aperture. The individual BIB devices consist of 70 μm thick active layers with As doping near 1.7×1018 cm-3, and have dark currents of approximately 100 nA at an operating temperature of 9 K. A simple ray-tracing model of the trap, along with data on the quantum yield of typical BIB detector elements, indicates that it is possible to achieve an external quantum efficiency of > 0.99 over the 4 μm to 28 μm spectral range and significant suppression of the etalon fringes present in the spectral responsivity of a single element. We have made initial responsivity measurements of the trap compared to a calibrated 5 mm diameter pyroelectric detector over the 3 μm to 17 μm spectral range using the fiber-coupled output of a Fourier-transform spectrometer. We also discuss the results of comparison measurements between the trap detector and an absolute cryogenic radiometer viewing the output of a calibrated blackbody source at discrete filter bands from 5 μm to 11 μ. In initial testing the performance of the trap is limited by the poor performance of the individual BIB detectors, but the advantages of boosted quantum efficiency and suppressed etalon are realized by the trap.

  16. The Development of 2700-3000 F Environmental Barrier Coatings for SiC/SiC Ceramic Matrix Composites: Challenges and Opportunities

    Science.gov (United States)

    Zhu, Dongming

    2015-01-01

    Environmental barrier coatings (EBCs) and SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in future turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is a key to enable the applications of the envisioned 2700-3000F EBC - CMC systems to help achieve next generation engine performance and durability goals. This paper will primarily address the performance requirements and design considerations of environmental barrier coatings for turbine engine applications. The emphasis is placed on current NASA candidate environmental barrier coating systems for SiCSiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. The efforts have been also directed to developing prime-reliant, self-healing 2700F EBC bond coat; and high stability, lower thermal conductivity, and durable EBC top coats. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, cyclic durability, erosion-impact resistance, and long-term system performance will be described. The research and development opportunities for turbine engine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be discussed.

  17. Nanostructured multilayered thin film barriers for Mg2Si thermoelectric materials

    Science.gov (United States)

    Battiston, S.; Boldrini, S.; Fiameni, S.; Agresti, F.; Famengo, A.; Fabrizio, M.; Barison, S.

    2012-06-01

    The Mg2Si-based alloys are promising candidates for thermoelectric energy conversion in the middle-high temperature range in order to replace lead compounds. The main advantages of silicide-based thermoelectrics are the nontoxicity and the abundance of their constituent elements in the earth crust. The drawback of such kind of materials is their oxygen sensitivity at high temperature that entails their use under vacuum or inert atmosphere. In order to limit the corrosion phenomena, nanostructured multilayered molybdenum silicide-based materials were deposited via RF magnetron sputtering onto stainless steel, alumina and silicon (100) to set up the deposition process and then onto Mg2Si pellets. XRD, EDS, FE-SEM and electrical measurements at high temperature were carried out in order to obtain, respectively, the structural, compositional, morphological and electrical characterization of the deposited coatings. At the end, the mechanical behavior of the system thin film/Mg2Si-substrate as a function of temperature and the barrier properties for oxygen protection after thermal treatment in air at high temperature were qualitatively evaluated by FE-SEM.

  18. Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

    Energy Technology Data Exchange (ETDEWEB)

    Dharmaraj, P.; Justin Jesuraj, P.; Jeganathan, K., E-mail: kjeganathan@yahoo.com [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)

    2016-02-01

    We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and high electron mobility well excess of 6000 cm{sup 2} V{sup −1} s{sup −1}.

  19. Research Progress in Silicon Carbide Neutron Detector%SiC中子探测器的研究进展

    Institute of Scientific and Technical Information of China (English)

    胡青青; 杨俊; 刘国福; 罗晓亮

    2012-01-01

    相比于气体、闪烁体及常规半导体中子探测器,基于第三代半导体材料SiC的中子探测器具有体积小、响应快、位置分辨率好、抗高温和耐辐照等众多优点.其中抗高温和耐辐照是应用于核反应堆堆芯、高能物理试验和太空等高温高压以及强辐射环境下的中子探测器需要突破的瓶颈.论文总结和分析了SiC的材料特性,SiC中子探测器的结构、工作原理、国内外发展现状以及存在的问题,并对我国中子探测器的发展趋势进行了探讨.%The detectors which are based on the third era semiconductor material SiC offer several important advantages over gas, scintillator and conventional semiconductor neutron detectors, such as compact size, faster charge - collection times, better location and spatial resolution, temperature and radiation hardness et al. A detector capable of operating at elevated temperatures and in high radiation fields including nuclear reactors, high - energy physical experiment and outer space, is the chokepoint that neutron detector need to break through. This article introduces the properties of the epitaxial silicon carbide material, SiC neutron detector configuration , work principle, also summarizes and analyses recent researches and problems need to solve of SiC neutron detector at home and abroad. At last,discusses the developing direction of radiation detectors in the interior.

  20. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    Science.gov (United States)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  1. High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Odaka, Hirokazu, E-mail: odaka@astro.isas.jaxa.jp [Department of High Energy Astrophysics, Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA), 3-1-1 Yoshinodai, Chuo, Sagamihara, Kanagawa 252-5210 (Japan); Ichinohe, Yuto [Department of High Energy Astrophysics, Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA), 3-1-1 Yoshinodai, Chuo, Sagamihara, Kanagawa 252-5210 (Japan); Department of Physics, Graduate School of Science, University of Tokyo, Hongo 7-3-1, Bunkyo, Tokyo 113-0033 (Japan); Takeda, Shin' ichiro [Department of High Energy Astrophysics, Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA), 3-1-1 Yoshinodai, Chuo, Sagamihara, Kanagawa 252-5210 (Japan); Fukuyama, Taro; Hagino, Koichi; Saito, Shinya; Sato, Tamotsu [Department of High Energy Astrophysics, Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA), 3-1-1 Yoshinodai, Chuo, Sagamihara, Kanagawa 252-5210 (Japan); Department of Physics, Graduate School of Science, University of Tokyo, Hongo 7-3-1, Bunkyo, Tokyo 113-0033 (Japan); Sato, Goro; Watanabe, Shin; Kokubun, Motohide [Department of High Energy Astrophysics, Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA), 3-1-1 Yoshinodai, Chuo, Sagamihara, Kanagawa 252-5210 (Japan); Takahashi, Tadayuki [Department of High Energy Astrophysics, Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA), 3-1-1 Yoshinodai, Chuo, Sagamihara, Kanagawa 252-5210 (Japan); Department of Physics, Graduate School of Science, University of Tokyo, Hongo 7-3-1, Bunkyo, Tokyo 113-0033 (Japan); Yamaguchi, Mitsutaka [Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency (JAEA), 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); and others

    2012-12-11

    We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-{mu}m-thick Si-DSD and four layers of 750-{mu}m-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250{mu}m. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5 Degree-Sign at 356 keV and 3.5 Degree-Sign at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

  2. Evaluation of signal energy calculation methods for a light-sharing SiPM-based PET detector

    Science.gov (United States)

    Wei, Qingyang; Ma, Tianyu; Xu, Tianpeng; Liu, Yaqiang; Wang, Shi; Gu, Yu

    2017-03-01

    Signals of a light-sharing positron emission tomography (PET) detector are commonly multiplexed to three analog pulses (E, X, and Y) and then digitally sampled. From this procedure, the signal energy that are critical to detector performance are obtained. In this paper, different signal energy calculation strategies for a self-developed SiPM-based PET detector, including pulse height and different integration methods, are evaluated in terms of energy resolution and spread of the crystal response in the flood histogram using a root-mean-squared (RMS) index. Results show that integrations outperform the pulse height. Integration using the maximum derivative value of the pulse E as the landmark point and 28 integrated points (448 ns) has the best performance in these evaluated methods for our detector. Detector performance in terms of energy and position is improved with this integration method. The proposed methodology is expected to be applicable for other light-sharing PET detectors.

  3. Design optimization of Pixel Structure for α-Si based uncooled Infrared detector

    Directory of Open Access Journals (Sweden)

    Sudha Gupta

    2013-12-01

    Full Text Available In this paper authors present the design and simulation results achieved for pixel structure of amorphous Si (α-Si based bolometer array. Most uncooled IR detectors in the world are based on VOx material. But this is not a standard material in IC technology and has many inherent disadvantages. The α-Si, an alternative material with high TCR is becoming as popular. However, large TCR values, in this material are achieved only in films of high resistivity. To achieve TCR value more than 2.5%/K, α-Si film resistivity is ~ 80 ohms-cm. This gives rise to very large pixel resistance of the order of 100 Mega ohms depending upon the design of the leg structure. This high pixel resistance causes very large noise and hence lower sensitivity. If leg width or membrane thickness is increased in order to reduce the pixel resistance, then this results in higher thermal conductance which also decreases sensitivity. To overcome this problem, pixel structure is so designed that within a pixel, only part of the electrical conduction is through α-Si and rest is through metal. Simulation using Coventorware software has been done to optimize pixel resistance as well as thermal conductance through legs so that maximum sensitivity could be obtained. Optimization is also carried out in order to reduce sensitivity of pixel resistance to variation in material resistivity.Defence Science Journal, 2013, 63(6, pp.581-588, DOI:http://dx.doi.org/10.14429/dsj.63.5758

  4. Development of Silicon Multi-strip Detector

    Institute of Scientific and Technical Information of China (English)

    TanJilian; JinGenming; WangHongwei; YuanXiaohua; DuanLiming; LiSonglin; LuZiwei; XuHushan; NingBaojun; TianDayu; WangWei; ZhangLu

    2003-01-01

    Position sensitive detector is very important for nuclear physics experiment. There several techniques can be used to fabricate position sensitive detector, for example, Si-surface barrier method, diffusion method, ion implantation and planar process etc. Among all the techniques mentioned above planar process is the best one. We have developed batch of position sensitive detector -- silicon multi-strip detector by using planar process.

  5. Low-Power Miniaturized Helium Dielectric Barrier Discharge Photoionization Detectors for Highly Sensitive Vapor Detection.

    Science.gov (United States)

    Zhu, Hongbo; Zhou, Menglian; Lee, Jiwon; Nidetz, Robert; Kurabayashi, Katsuo; Fan, Xudong

    2016-09-06

    This paper presents the design, fabrication, and characterization of a microhelium dielectric barrier discharge photoionization detector (μHDBD-PID) on chip with dimensions of only ∼15 mm × ∼10 mm × ∼0.7 mm and weight of only ∼0.25 g. It offers low power consumption (4 orders of magnitude), and maintenance-free operation. Furthermore, the μHDBD-PID can be driven with a miniaturized (∼5 cm × ∼2.5 cm × ∼2.5 cm), light (22 g), and low cost (∼$2) power supply with only 1.5 VDC input. The dependence of the μHDBD-PID performance on bias voltage, auxiliary helium flow rate, carrier gas flow rate, and temperature was also systematically investigated. Finally, the μHDBD-PID was employed to detect permanent gases and a sublist of the EPA 8260 standard reagents that include 51 analytes. The μHDBD-PID developed here can have a broad range of applications in portable and microgas chromatography systems for in situ, real-time, and sensitive gas analysis.

  6. Design and fabrication of highly heat-resistant Mo/Si multilayer soft X-ray mirrors with interleaved barrier layers.

    Science.gov (United States)

    Takenaka, H; Ito, H; Haga, T; Kawamura, T

    1998-05-01

    Introducing interleaved carbon barrier layers improves the heat-resistance of Mo/Si multilayers. The soft X-ray reflectivities of the multilayers were calculated, and the effects of heating on both the reflectivities and layer structures of Mo/Si multilayers with and without barrier layers were investigated using X-ray diffraction and transmission electron microscopy. The results show that, for applications using intense soft X-ray beams, Mo/Si multilayers with interleaved carbon barrier layers are better mirrors than Mo/Si multilayers because they have much better heat resistance and almost the same soft X-ray reflectivity as the Mo/Si multilayers.

  7. A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Purches, W. E. [School of Physics, UNSW, Sydney 2052 (Australia); Rossi, A.; Zhao, R. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Kafanov, S.; Duty, T. L. [School of Physics, UNSW, Sydney 2052 (Australia); Centre for Engineered Quantum Systems (EQuS), School of Physics, UNSW, Sydney 2052 (Australia); Dzurak, A. S. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia); Rogge, S.; Tettamanzi, G. C., E-mail: g.tettamanzi@unsw.edu.au [School of Physics, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia)

    2015-08-10

    Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

  8. Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

    Institute of Scientific and Technical Information of China (English)

    QIAO Da-Yong; YUAN Wei-Zheng; GAO Peng; YAO Xian-Wang; ZANG Bo; ZHANG Lin; GUO Hui; ZHANG Hong-Jian

    2008-01-01

    A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation.Under illumination of Ni-63 source with an apparent activity of 4mCi/cm2, an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion effciency of 1.2% is obtained.The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.

  9. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

    Directory of Open Access Journals (Sweden)

    Ivan Shtepliuk

    2016-11-01

    Full Text Available A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.

  10. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals.

    Science.gov (United States)

    Shtepliuk, Ivan; Eriksson, Jens; Khranovskyy, Volodymyr; Iakimov, Tihomir; Lloyd Spetz, Anita; Yakimova, Rositsa

    2016-01-01

    A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current-voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium-graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I-V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.

  11. Bent Si monochromator—multi-detector neutron diffractometer installed at B4 super-mirror thermal guide tube in KUR

    Science.gov (United States)

    Achiwa, N.; Kawano, S.; Hino, M.; Mikula, P.; Ono, M.; Fukunaga, T.

    2004-08-01

    A new multi-detector neutron diffractometer has been installed at B4 thermal supermirror neutron guide in KUR, using a new bent Si monochromator developed by Mikula et al. and Ono et al.. Here we report resolutions of powder diffraction patterns by the multi-detector neutron diffractometer, which mainly depend on a radius of sample. Bragg diffraction optics by bent perfect crystal shows improvement of resolution without loss of luminosity and the multi- detector on the same 2 θ arm can gain the intensity without loosing resolution.

  12. A low cost network of spectrometer radiation detectors based on the ArduSiPM a compact transportable Software/Hardware Data Acquisition system with Arduino DUE

    Energy Technology Data Exchange (ETDEWEB)

    Bocci, Valerio; Chiodi, Giacomo; Iacoangeli, Francesco; Nuccetelli, Massimo; Recchia, Luigi [INFN Sezione di Roma, P.le Aldo moro 2, Rome, I-00185 (Italy)

    2015-07-01

    The necessity to use Photo Multipliers (PM) as light detector limited in the past the use of crystals in radiation handled device preferring the Geiger approach. The Silicon Photomultipliers (SiPMs) are very small and cheap, solid photon detectors with good dynamic range and single photon detection capability, they are usable to supersede cumbersome and difficult to use Photo Multipliers (PM). A SiPM can be coupled with a scintillator crystal to build efficient, small and solid radiation detector. A cost effective and easily replicable Hardware software module for SiPM detector readout is made using the ArduSiPM solution. The ArduSiPM is an easily battery operable handled device using an Arduino DUE (an open Software/Hardware board) as processor board and a piggy-back custom designed board (ArduSiPM Shield), the Shield contains all the blocks features to monitor, set and acquire the SiPM using internet network. (authors)

  13. Response functions of Si(Li), SDD and CdTe detectors for mammographic x-ray spectroscopy.

    Science.gov (United States)

    Tomal, A; Cunha, D M; Antoniassi, M; Poletti, M E

    2012-07-01

    In this work, the energy response functions of Si(Li), SDD and CdTe detectors were studied in the mammographic energy range through Monte Carlo simulation. The code was modified to take into account carrier transport effects and the finite detector energy resolution. The results obtained show that all detectors exhibit good energy response at low energies. The most important corrections for each detector were discussed, and the corrected mammographic x-ray spectra obtained with each one were compared. Results showed that all detectors provided similar corrected spectra, and, therefore, they could be used to accurate mammographic x-ray spectroscopy. Nevertheless, the SDD is particularly suitable for clinic mammographic x-ray spectroscopy due to the easier correction procedure and portability.

  14. Creep, Fatigue and Fracture Behavior of Environmental Barrier Coating and SiC-SiC Ceramic Matrix Composite Systems: The Role of Environment Effects

    Science.gov (United States)

    Zhu, Dongming; Ghosn, Louis J.

    2015-01-01

    Advanced environmental barrier coating (EBC) systems for low emission SiCSiC CMC combustors and turbine airfoils have been developed to meet next generation engine emission and performance goals. This presentation will highlight the developments of NASAs current EBC system technologies for SiC-SiC ceramic matrix composite combustors and turbine airfoils, their performance evaluation and modeling progress towards improving the engine SiCSiC component temperature capability and long-term durability. Our emphasis has also been placed on the fundamental aspects of the EBC-CMC creep and fatigue behaviors, and their interactions with turbine engine oxidizing and moisture environments. The EBC-CMC environmental degradation and failure modes, under various simulated engine testing environments, in particular involving high heat flux, high pressure, high velocity combustion conditions, will be discussed aiming at quantifying the protective coating functions, performance and durability, and in conjunction with damage mechanics and fracture mechanics approaches.

  15. Mechanical Properties and Real-Time Damage Evaluations of Environmental Barrier Coated SiC/SiC CMCs Subjected to Tensile Loading Under Thermal Gradients

    Science.gov (United States)

    Appleby, Matthew; Zhu, Dongming; Morscher, Gregory

    2015-01-01

    SiC/SiC ceramic matrix composites (CMCs) require new state-of-the art environmental barrier coatings (EBCs) to withstand increased temperature requirements and high velocity combustion corrosive combustion gasses. The present work compares the response of coated and uncoated SiC/SiC CMC substrates subjected to simulated engine environments followed by high temperature mechanical testing to asses retained properties and damage mechanisms. Our focus is to explore the capabilities of electrical resistance (ER) measurements as an NDE technique for testing of retained properties under combined high heat-flux and mechanical loading conditions. Furthermore, Acoustic Emission (AE) measurements and Digital Image Correlation (DIC) were performed to determine material damage onset and accumulation.

  16. Study of nuclear structure effect on fusion through barrier distribution for the system 28Si+154Sm

    Directory of Open Access Journals (Sweden)

    Kaur Gurpreet

    2015-01-01

    Full Text Available We plan to perform large angle quasi-elastic scattering experiments using a 28Si beam on heavy targets in order to study the nuclear dynamics and structure effects. As a prelude to our first test experiment with a 154Sm target, we study here the existing fusion data for the same system through the barrier distribution.

  17. High Pressure Burner Rig Testing of Advanced Environmental Barrier Coatings for Si3N4 Turbine Components

    Science.gov (United States)

    Zhu, Dongming; Fox, Dennis S.; Pastel, Robert T.

    2007-01-01

    Advanced thermal and environmental barrier coatings are being developed for Si3N4 components for turbine engine propulsion applications. High pressure burner rig testing was used to evaluate the coating system performance and durability. Test results demonstrated the feasibility and durability of the coating component systems under the simulated engine environments.

  18. Effects of solvent on the formation of the MUA monolayer on Si and its diffusion barrier properties for Cu metallization

    Science.gov (United States)

    Rahman, Mohammad Arifur; Han, Jung Suk; Jeong, Kyunghoon; Nam, Ho-seok; Lee, Jaegab

    2014-05-01

    We investigated the effects of solvents, such as ethanol and isooctane, on self-assembly of the mercaptoundecanoic acid (MUA) monolayer on Si and its diffusion barrier properties for Cu metallization. The use of isooctane as a solvent produced MUA self-assembled monolayers (SAMs) (˜1.3 nm thick) on Si. These acted as an effective diffusion barrier against Cu diffusion up to 200°C. In contrast, the MUA SAMs produced by ethanol allowed the diffusion of Cu to a MUA-Si interface at 200°C, stimulating the out-diffusion of Si into Cu and thus resulting in the degraded diffusion barrier properties. This was possibly due to the partial formation of interplane hydrogen bonding between the terminal groups of the bound acid and free thiol groups. This provided less dense thiol surface groups, thus leading to poor adhesion of Cu to MUA SAMs. The fabricated Cu/isooctane-assisted MUA source/drain electrode a-Si:H thin film transistors with a channel length of 10 µm exhibited an excellent electron mobility of 0.74 cm2/V-s, threshold voltage of -0.51 V, I on / I off ratio of 3.25 × 106, specific contact resistance of 4.24 Ω-cm2 after annealing at 200°C.

  19. Characterization of Si Hybrid CMOS Detectors for use in the Soft X-ray Band

    CERN Document Server

    Prieskorn, Zachary; Bongiorno, Stephen D; Falcone, Abraham D; Burrows, David N

    2013-01-01

    We report on the characterization of four Teledyne Imaging Systems HAWAII Hybrid Si CMOS detectors designed for X-ray detection. Three H1RG detectors were studied along with a specially configured H2RG. Read noise measurements were performed, with the lowest result being 7.1 e- RMS. Interpixel capacitive crosstalk (IPC) was measured for the three H1RGs and for the H2RG. The H1RGs had IPC upper limits of 4.0 - 5.5 % (up & down pixels) and 8.7 - 9.7 % (left & right pixels), indicating a clear asymmetry. Energy resolution is reported for two X-ray lines, 1.5 & 5.9 keV, at multiple temperatures between 150 - 210 K. The best resolution measured at 5.9 keV was 250 eV (4.2 %) at 150 K, with IPC contributing significantly to this measured energy distribution. The H2RG, with a unique configuration designed to decrease the capacitive coupling between ROIC pixels, had an IPC of 1.8 +/- 1.0 % indicating a dramatic improvement in IPC with no measurable asymmetry. We also measured dark current as a function of ...

  20. Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions

    Science.gov (United States)

    Saito, Y.; Ishikawa, M.; Sugiyama, H.; Inokuchi, T.; Hamaya, K.; Tezuka, N.

    2015-05-01

    Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - tMgO plot (RA: resistance area product, tMgO: thickness of MgO tunnel barrier) in CoFe/MgO/n+-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization ( P S i ) in Si. The estimated absolute values of P S i using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. To demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/n+-Si junction electrode is important.

  1. Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier

    Institute of Scientific and Technical Information of China (English)

    Song Qing-Wen; Zhang Yu-Ming; Zhang Yi-Men; Chen Feng-Ping; Tang xiao-Yan

    2011-01-01

    The current transport parameters of 4H-SiC merged PiN Schottky (MPS) diode are investigated in a temperature range of 300-520 K. Evaluation of the experimental current-voltage (Ⅰ-Ⅴ) data reveals the decrease in Schottky barrier height φb but an increase in ideality factor n, with temperature decreasing, which suggests the presence of an inhomogeneous Schottky barrier. The current transport behaviours are analysed in detail using the Tung's model and the effective area of the low barrier patches is extracted. It is found that small low barrier patches, making only 4.3% of the total contact, may significantly influence the device electrical characteristics due to the fact that a barrier height of 0.968 eV is much lower than the average barrier height 1.39 eV. This shows that ion implantation in the Schottky contact region of MPS structure may result in a poor Ti/4H-SiC interface quality. In addition, the temperature dependence of the specific on-resistance (Ron-sp), T2.14, is determined between 300 K and 520 K, which is similar to that predicted by a reduction in electron mobility.

  2. Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements

    Institute of Scientific and Technical Information of China (English)

    G.Gfüler; (O).Güllü; (S).Karata(s); (O).F.Bakkalo(g)lu

    2009-01-01

    Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I- V) and capacitancevoltage (C-V) techniques at room temperature.The electronic parameters such as ideality factor,barrier height and average series resistance are determined.The barrier height 0.76 eV obtained from the C-V measurements is higher than that of the value 0.70 eV obtained from the I-V measurements.The series resistance Rs and the ideality factor n are determined from the d ln( I ) / dV plot and are found to be 193.62Ω and 1.34,respectively.The barrier height and the Rs value are calculated from the H(I) - I plot and are found to be 0.71 eV and 205.95Ω.Furthermore,the energy distribution of the interface state density is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height.The interface state density Nss ranges from 6.484×1011 cm-2eV-1 in (Ec-0.446) eV to 2.801×1010 cm-2eV-1 in (Ec-0.631) eV,of the Co/n-Si Schottky barrier diode.The results show the presence of a thin interracial layer between the metal and the semiconductor.

  3. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when

  4. SiPM detectors for the ASTRI project in the framework of the Cherenkov Telescope Array

    Science.gov (United States)

    Billotta, Sergio; Marano, Davide; Bonanno, Giovanni; Belluso, Massimiliano; Grillo, Alessandro; Garozzo, Salvatore; Romeo, Giuseppe; Timpanaro, Maria Cristina; Maccarone, Maria Concetta C.; Catalano, Osvaldo; La Rosa, Giovanni; Sottile, Giuseppe; Impiombato, Domenico; Gargano, Carmelo; Giarrusso, Salavtore

    2014-07-01

    The Cherenkov Telescope Array (CTA) is a worldwide new generation project aimed at realizing an array of a hundred ground based gamma-ray telescopes. ASTRI (Astrofisica con Specchi a Tecnologia Replicante Italiana) is the Italian project whose primary target is the development of an end-to-end prototype, named ASTRI SST-2M, of the CTA small size class of telescopes devoted to investigation of the highest energy region, from 1 to 100 TeV. Next target is the implementation of an ASTRI/CTA mini-array based on seven identical telescopes. Silicon Photo-Multipliers (SiPMs) are the semiconductor photosensor devices designated to constitute the camera detection system at the focal plane of the ASTRI telescopes. SiPM photosensors are suitable for the detection of the Cherenkov flashes, since they are very fast and sensitive to the light in the 300-700nm wavelength spectrum. Their drawbacks compared to the traditional photomultiplier tubes are high dark count rates, after-pulsing and optical cross-talk contributions, and intrinsic gains strongly dependent on temperature. Nonetheless, for a single pixel, the dark count rate is well below the Night Sky Background, the effects of cross-talk and afterpulses are typically lower than 20%, and the gain can be kept stable against temperature variations by means of adequate bias voltage compensation strategies. This work presents and discusses some experimental results from a large set of measurements performed on the SiPM sensors to be used for the ASTRI SST-2M prototype camera and on recently developed detectors demonstrating outstanding performance for the future evolution of the project in the ASTRI/CTA mini-array.

  5. NASA's Advanced Environmental Barrier Coatings Development for SiC/SiC Ceramic Matrix Composites: Understanding Calcium Magnesium Alumino-Silicate (CMAS) Degradations and Resistance

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Environmental barrier coatings (EBCs) and SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is essential to the viability and reliability of the envisioned CMC engine component applications, ensuring integrated EBC-CMC system durability and designs are achievable for successful applications of the game-changing component technologies and lifing methodologies.This paper will emphasize recent NASA environmental barrier coating developments for SiCSiC turbine airfoil components, utilizing advanced coating compositions, state-of-the-art processing methods, and combined mechanical and environment testing and durability evaluations. The coating-CMC degradations in the engine fatigue-creep and operating environments are particularly complex; one of the important coating development aspects is to better understand engine environmental interactions and coating life debits, and we have particularly addressed the effect of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the durability of the environmental barrier coating systems, and how the temperature capability, stability and cyclic life of the candidate rare earth oxide and silicate coating systems will be impacted in the presence of the CMAS at high temperatures and under simulated heat flux conditions. Advanced environmental barrier coating systems, including HfO2-Si with rare earth dopant based bond coat systems, will be discussed for the performance improvements to achieve better temperature capability and CMAS resistance for future engine operating conditions.

  6. Characterization and simulation of fast neutron detectors based on surface-barrier VPE GaAs structures with polyethylene converter

    Science.gov (United States)

    Chernykh, A. V.; Chernykh, S. V.; Baryshnikov, F. M.; Didenko, S. I.; Burtebayev, N.; Britvich, G. I.; Kostin, M. Yu.; Chubenko, A. P.; Nassurlla, Marzhan; Nassurlla, Maulen; Kerimkulov, Zh.; Zholdybayev, T.; Glybin, Yu. N.; Sadykov, T. Kh.

    2016-12-01

    Fast neutron detectors with an active area of 80 mm2 based on surface-barrier VPE GaAs structures were fabricated and tested. Polyethylene with density of 0.90 g/cm3 was used as a converter layer. The recoil-proton surface-barrier sensor was fabricated on high purity VPE GaAs epilayers with a thickness of 50 μm. The neutron detection efficiency measured with a 241Am-Be source was 1.30 · 10-3 puls./neutr. for the PE converter thickness of 670 μm. The signal-to-gamma-background ratio was at the level of 50. Simulation of the detector characteristics with Geant4 toolkit has showed good correlation with the experimental data and allowed to estimate the maximal theoretical detection efficiency of the detector which is determined by the PE converter and equals to 1.37 · 10-3 puls./neutr. The difference between the measured and simulated values of the detection efficiency is due to the fact that the events with energies below 0.5 MeV were not taken into account during the measurements.

  7. Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment

    CERN Document Server

    Li, Z; Anbinderis, P; Anbinderis, T; D’Ambrosio, N; de Boer, Wim; Borchi, E; Borer, K; Bruzzi, M; Buontempo, S; Chen, W; Cindro, V; Dierlamm, A; Eremin, V; Gaubas, E; Gorbatenko, V; Grigoriev, E; Hauler, F; Heijne, Erik H M; Heising, S; Hempel, O; Herzog, R; Härkönen, J; Ilyashenko, I; Janos, S; Jungermann, L; Kalesinskas, V; Kapturauskas, J; Laiho, R; Luukka, P; Mandic, I; De Masi, R; Menichelli, D; Mikuz, M; Militaru, O; Niinikosky, T O; O’Shea, V; Pagano, S; Paul, S; Piotrzkowski, K; Pretzl, K; Rato-Mendes, P; Rouby, X; Ruggiero, G; Smith, K; Sonderegger, P; Sousa, P; Tuominen, E; Tuovinen, E; Verbitskaya, E; Vaitkus, J; Wobst, E; Zavrtanik, M

    2007-01-01

    There are two key approaches in our CERN RD 39 Collaboration efforts to obtain ultra-radiation-hard Si detectors: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (150 K), and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the liquid nitrogen (LN2) temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures.

  8. Development of a composite large-size SiPM (assembled matrix) based modular detector cluster for MAGIC

    Science.gov (United States)

    Hahn, A.; Mazin, D.; Bangale, P.; Dettlaff, A.; Fink, D.; Grundner, F.; Haberer, W.; Maier, R.; Mirzoyan, R.; Podkladkin, S.; Teshima, M.; Wetteskind, H.

    2017-02-01

    The MAGIC collaboration operates two 17 m diameter Imaging Atmospheric Cherenkov Telescopes (IACTs) on the Canary Island of La Palma. Each of the two telescopes is currently equipped with a photomultiplier tube (PMT) based imaging camera. Due to the advances in the development of Silicon Photomultipliers (SiPMs), they are becoming a widely used alternative to PMTs in many research fields including gamma-ray astronomy. Within the Otto-Hahn group at the Max Planck Institute for Physics, Munich, we are developing a SiPM based detector module for a possible upgrade of the MAGIC cameras and also for future experiments as, e.g., the Large Size Telescopes (LST) of the Cherenkov Telescope Array (CTA). Because of the small size of individual SiPM sensors (6 mm×6 mm) with respect to the 1-inch diameter PMTs currently used in MAGIC, we use a custom-made matrix of SiPMs to cover the same detection area. We developed an electronic circuit to actively sum up and amplify the SiPM signals. Existing non-imaging hexagonal light concentrators (Winston cones) used in MAGIC have been modified for the angular acceptance of the SiPMs by using C++ based ray tracing simulations. The first prototype based detector module includes seven channels and was installed into the MAGIC camera in May 2015. We present the results of the first prototype and its performance as well as the status of the project and discuss its challenges.

  9. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Si Nanowire with an Intrinsic Doping Gradient.

    Science.gov (United States)

    Barreda, Jorge L; Keiper, Timothy D; Zhang, Mei; Xiong, Peng

    2017-03-09

    In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with Ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal Ohmic and Schottky contacts as the source and drain respectively present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from Ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky-barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

  10. A Study of the Impact of High Cross Section ILC Processes on the SiD Detector Design

    CERN Document Server

    Barklow, Timothy; Milke, Christopher; Schumm, Bruce; Schütz, Anne; Stanitzki, Marcel; Strube, Jan

    2016-01-01

    The SiD concept is one of two proposed detectors to be mounted at the interaction region of the International Linear Collider (ILC). A substantial ILC background arises from low transverse momentum $\\mathrm{e}^{+}\\mathrm{e}^{-}$ pairs created by the interaction of the colliding beams' electromagnetic fields. In order to provide hermeticity and sensitivity to beam targeting parameters, a forward Beamline Calorimeter (BeamCal) is being designed that will provide coverage down to 5 mrad from the outgoing beam trajectory, and intercept the majority of this pair background. Using the SiD simulation framework, the effect of this pair background on the SiD detector components, especially the vertex detector (VXD) and forward electromagnetic calorimeter (FCAL), is explored. In the case of the FCAL, backgrounds from Bhabha and two-photon processes are also considered. The consequence of several variants of the BeamCal geometry and ILC interaction region configuration are considered for both the vertex detector and Bea...

  11. High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature

    Institute of Scientific and Technical Information of China (English)

    Zhang Lin; Zhang Yi-Men; Zhang Yu-Ming; Han Chao; Ma Yong-Ji

    2009-01-01

    This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes (SBDs) were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43×1014 e/cm2. After radiation, the Schottky barrier height φB of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of φB could be explained by interface states of changed Schottky contacts. The on-state resistance RS of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φB of the diodes recovered completely after one week, and the RS partly recovered.

  12. Deep ultraviolet photodetectors based on p-Si/ i-SiC/ n-Ga2O3 heterojunction by inserting thin SiC barrier layer

    Science.gov (United States)

    An, Yuehua; Zhi, Yusong; Wu, Zhenping; Cui, Wei; Zhao, Xiaolong; Guo, Daoyou; Li, Peigang; Tang, Weihua

    2016-12-01

    Deep ultraviolet photodetectors based on p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterojunctions were fabricated by laser molecular beam epitaxial (L-MBE), respectively. In compare with p-Si/ n-Ga2O3 heterostructure-based photodetector, the dark current of p-Si/ i-SiC/ n-Ga2O3-based photodetector decreased by three orders of magnitude, and the rectifying behavior was tuned from reverse to forward. In order to improve the quality of the photodetector, we reduced the oxygen vacancies of p-Si/ i-SiC/ n-Ga2O3 heterostructures by changing the oxygen pressure during annealing. As a result, the rectification ratio ( I F/ I R) of the fabricated photodetectors was 36 at 4.5 V and the photosensitivity was 5.4 × 105% under the 254 nm light illumination at -4.5 V. The energy band structure of p-Si/ n-Ga2O3 and p-Si/ i-SiC/ n-Ga2O3 heterostructures was schematic drawn to explain the physic mechanism of enhancement of the performance of p-Si/ i-SiC/ n-Ga2O3 heterostructure-based deep UV photodetector by introduction of SiC layer.

  13. Thermal stability of atomic layer deposited Ru layer on Si and TaN/Si for barrier application of Cu interconnection.

    Science.gov (United States)

    Shin, Dong Chan; Kim, Moo Ryul; Lee, Jong Ho; Choi, Bum Ho; Lee, Hong Kee

    2012-07-01

    The thermal stability of thin Ru single layer and Ru/TaN bilayers grown on bare Si by plasma enhanced atomic layer deposition (PEALD) have been studied with Cu/Ru, Cu/Ru/TaN structures as a function of annealing temperature. To investigate the characteristics as a copper diffusion barrier, a 50 nm thick Cu film was sputtered on Ru and Ru/TaN layers and each samples subjected to thermal annealing under N2 ambient with varied temperature 300, 400, and 500 degrees C, respectively. It was found that the single 5 nm thick ALD Ru layer acted as an effective Cu diffusion barrier up to 400 degrees C. On the other hand ALD Ru (5 nm)/TaN (3.2 nm) showed the improved diffusion barrier characteristics even though the annealing temperature increased up to 500 degrees C. Based on the experimental results, the failure mechanism of diffusion barrier would be related to the crystallization of amorphous Ru thin film as temperature raised which implies the crystallized Ru grain boundary served as the diffusion path of Cu atoms. The combination of ALD Ru incorporated with TaN layer would be a promising barrier structure in Cu metallization.

  14. Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy

    Science.gov (United States)

    Lin, T. L.; Park, J. S.; George, T.; Jones, E. W.; Fathauer, R. W.; Maserjian, J.

    1993-01-01

    By incorporating a 1-nm-thick p(+) doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p(+) doping spike and the Schottky image force. The p(+) doping spikes were grown by molecular beam epitaxy at 450 C, using elemental boron as the dopant source, with doping concentrations ranging from 5 x 10 exp 19 to 2 x 10 exp 20/cu cm. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p(+) spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.

  15. The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes

    Science.gov (United States)

    Duman, S.; Dogan, S.; Gürbulak, B.; Türüt, A.

    2008-05-01

    The effective barrier heights and ideality factors of identically fabricated Ni/n-type 6 H-SiC Schottky diodes (23 dots) have been calculated from their experimental forward bias current voltage (I V) and reverse bias capacitance voltage (C V) characteristics. A statistical study related to the experimental barrier heights (BHs) and ideality factors of the diodes has been made. The effective Schottky barrier heights (SBHs) and ideality factors obtained from the I V and C V characteristics have differed from diode to diode. The BHs obtained from the I V characteristics varied from 0.85 to 1.03 eV, the ideality factors varied from 1.13 to 1.40 and the BHs from C-2 V characteristics varied from 1.10 to 1.70 eV. The experimental BH and ideality factor distributions obtained from the I V characteristics are fitted by a Gaussian function, and their mean values are found to be 0.92±0.04 eV and 1.29±0.08 eV, respectively. The lateral homogeneous SBH value of 1.16 eV for the Ni/n-type 6H-SiC diodes has been calculated from a linear extrapolation of the effective barrier heights to nif=1.03.

  16. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Science.gov (United States)

    Erdoğan, Erman; Kundakçı, Mutlu

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  17. Development of novel on-chip, customer-design spiral biasing adaptor on for Si drift detectors and detector arrays for X-ray and nuclear physics experiments

    Science.gov (United States)

    Li, Zheng; Chen, Wei

    2014-11-01

    A novel on-chip, customer-design spiral biasing adaptor (SBA) has been developed. A single SBA is used for biasing a Si drift detector (SDD) and SDD array. The use of an SBA reduces the biasing current. This paper shows the calculation of the geometry of an SBA and an SDD to get the best drift field in the SDD and SDD array. Prototype SBAs have been fabricated to verify the concept. Electrical measurements on these SBAs are in agreement with the expectations. The new SDD array with an SBA can be used for X-ray detection and in nuclear physics experiments.

  18. Development of novel on-chip, customer-design spiral biasing adaptor on for Si drift detectors and detector arrays for X-ray and nuclear physics experiments

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zheng, E-mail: lizheng@xtu.edu.cn [School of Materials, Optoelectronics and Physics, Xiangtan University, Xiangtan, Hunan 411105 (China); Chen, Wei [Brookhaven National Laboratory, Upton, NY 11973 (United States)

    2014-11-21

    A novel on-chip, customer-design spiral biasing adaptor (SBA) has been developed. A single SBA is used for biasing a Si drift detector (SDD) and SDD array. The use of an SBA reduces the biasing current. This paper shows the calculation of the geometry of an SBA and an SDD to get the best drift field in the SDD and SDD array. Prototype SBAs have been fabricated to verify the concept. Electrical measurements on these SBAs are in agreement with the expectations. The new SDD array with an SBA can be used for X-ray detection and in nuclear physics experiments.

  19. Preparation and properties of SiCN diffusion barrier layer for Cu interconnect in ULSI

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ji-cheng; SHI Zhi-jie; ZHENG Xu-qiang

    2009-01-01

    SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si-C, Si-N, C-N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.

  20. RBS using {sup 28}Si beams

    Energy Technology Data Exchange (ETDEWEB)

    Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia); Mitchell, I.V. [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1996-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  1. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors.

    Science.gov (United States)

    Cassol, F; Portal, L; Graber-Bolis, J; Perez-Ponce, H; Dupont, M; Kronland, C; Boursier, Y; Blanc, N; Bompard, F; Boudet, N; Buton, C; Clémens, J C; Dawiec, A; Debarbieux, F; Delpierre, P; Hustache, S; Vigeolas, E; Morel, C

    2015-07-21

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images.

  2. A feasibility study to track cosmic muons using a detector with SiPM devices based on amplitude discrimination

    CERN Document Server

    Stanca, D; Brancus, I; Mitrica, B; Balaceanu, A; Cautisanu, B; Gherghel-Lascu, A; Haungs, A; Mathes, H -J; Rebel, H; Saftoiu, A; Sima, O; Mosu, T

    2016-01-01

    The possibility to build a SiPM-readout muon detector (SiRO), using plastic scintillators with optical fibers as sensitive volume and readout by SiPM photo-diodes, is investigated. SiRO shall be used for tracking cosmic muons based on amplitude discrimination. The detector concept foresees a stack of 6 active layers, grouped in 3 sandwiches for determining the muon trajectories through 3 planes. After investigating the characteristics of the photodiodes, tests have been performed using two detection modules, each being composed from a plastic scintillator sheet, $100 \\times 25 \\times 1\\,$cm$^{3}$, with 12 parallel, equidistant ditches; each ditch filled with an optical fiber of $1.5\\,$mm thickness and always two fibers connected to form a channel. The attenuation of the light response along the optical fiber and across the channels have been tested. The measurements of the incident muons based on the input amplitude discrimination indicate that this procedure is not efficient and therefore not sufficient, as ...

  3. Development of SiPM-based scintillator tile detectors for a multi-layer fast neutron tracker

    Directory of Open Access Journals (Sweden)

    Jakubek J.

    2012-10-01

    Full Text Available We are developing thin tile scintillator detectors with silicon photomultiplier (SiPM readout for use in a multi-layer fast-neutron tracker. The tracker is based on interleaved Timepix and plastic scintillator layers. The thin 15 × 15 × 2 mm plastic scintillators require suitable optical readout in order to detect and measure the energy lost by energetic protons that have been recoiled by fast neutrons. Our first prototype used dual SiPMs, coupled to opposite edges of the scintillator tile using light-guides. An alternative readout geometry was designed in an effort to increase the fraction of scintillation light detected by the SiPMs. The new prototype uses a larger SiPM array to cover the entire top face of the tile. This paper details the comparative performance of the two prototype designs. A deuterium-tritium (DT fast-neutron source was used to compare the relative light collection efficiency of the two designs. A collimated UV light source was scanned across the detector face to map the uniformity. The new prototype was found to have 9.5 times better light collection efficiency over the original design. Both prototypes exhibit spatial non-uniformity in their response. Methods of correcting this non-uniformity are discussed.

  4. Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    J. H. Yum

    2012-01-01

    Full Text Available In a previous study, we have demonstrated that beryllium oxide (BeO film grown by atomic layer deposition (ALD on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs. Si MOSCAPs and MOSFETs with a BeO/HfO2 gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

  5. Diffusion barrier property of MnSi{sub x}O{sub y} layer formed by chemical vapor deposition for Cu advanced interconnect application

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Mai Phuong, E-mail: nmphuong46@gmail.com; Sutou, Yuji; Koike, Junichi, E-mail: koikej@material.tohoku.ac.jp

    2015-04-01

    An amorphous manganese oxide layers formed by chemical vapor deposition have been studied as a copper diffusion barrier. The thermal stability of the barrier layer was assessed by annealing Cu/MnSi{sub x}O{sub y}/SiO{sub 2}/Si samples at 400 °C for various times up to 10 h. Transmission electron microscopy, energy-dispersive X-ray spectroscopy (EDX), secondary ion mass spectroscopy (SIMS), capacitance-voltage and current–voltage measurements were performed. Failure of the barrier property is marked by observing the copper peak appearing in EDX and SIMS spectra data from the SiO{sub 2} region. Amorphous MnSi{sub x}O{sub y} barrier with a thickness of 1.2 nm has failed in preventing Cu diffusion into SiO{sub 2} substrate after anneal at 400°C in vacuum for 1h, as proven by the presence of Cu in the dielectric (SiO{sub 2}) layer. However, the amorphous MnSi{sub x}O{sub y} with the thickness of 2.0 nm barrier was thermally stable and could prevent Cu from inter-diffusion to the SiO{sub 2} substrate after annealing at 400 °C even up to 10 h. - Highlights: • Amorphous manganese silicate layer has been studied as a copper diffusion barrier. • The 1.2 nm-thick Mn oxide layer is too thin to become a diffusion barrier. • Good thermal stability of 2.0 nm-thick manganese silicate layer.

  6. High-efficiency superconducting nanowire single-photon detectors fabricated from MoSi thin-films.

    Science.gov (United States)

    Verma, V B; Korzh, B; Bussières, F; Horansky, R D; Dyer, S D; Lita, A E; Vayshenker, I; Marsili, F; Shaw, M D; Zbinden, H; Mirin, R P; Nam, S W

    2015-12-28

    We report on MoSi SNSPDs which achieved high system detection efficiency (87.1 ± 0.5% at 1542 nm) at 0.7 K and we demonstrate that these detectors can also be operated with saturated internal efficiency at a temperature of 2.3 K in a Gifford-McMahon cryocooler. We measured a minimum system jitter of 76 ps, maximum count rate approaching 10 MHz, and polarization dependence as low as 3.3 ± 0.1%. The performance of MoSi SNSPDs at 2.3 K is similar to the performance of WSi SNSPDs at < 1 K. The higher operating temperature of MoSi SNSPDs makes these devices promising for widespread use due to the simpler and less expensive cryogenics required for their operation.

  7. Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n{sup +}-Si junctions

    Energy Technology Data Exchange (ETDEWEB)

    Saito, Y., E-mail: yoshiaki.saito@toshiba.co.jp; Ishikawa, M.; Sugiyama, H.; Inokuchi, T. [Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, 212-8582 Kawasaki (Japan); Hamaya, K. [Graduate School of Engineering Science, Osaka University, 1-3, Machikaneyama-cho, Toyonaka city, Osaka 560-8531 (Japan); Tezuka, N. [Department of Materials Science, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)

    2015-05-07

    Correlation between the amplitude of the spin accumulation signals and the effective barrier height estimated from the slope of the log (RA) - t{sub MgO} plot (RA: resistance area product, t{sub MgO}: thickness of MgO tunnel barrier) in CoFe/MgO/n{sup +}-Si junctions was investigated. The amplitude of spin accumulation signals increases with increasing effective barrier heights. This increase of the amplitude of spin accumulation is originated from the increase of the spin polarization (P{sub Si}) in Si. The estimated absolute values of P{sub Si} using three-terminal Hanle signals are consistent with those estimated by four-terminal nonlocal-magnetoresistance (MR) and two-terminal local-MR. To demonstrate large spin accumulation in Si bulk band and enhance the local-MR through Si channel, these results indicate that the increase of the effective barrier height at ferromagnet/(tunnel barrier)/n{sup +}-Si junction electrode is important.

  8. Performance and emission characteristics of the thermal barrier coated SI engine by adding argon inert gas to intake mixture

    Directory of Open Access Journals (Sweden)

    T. Karthikeya Sharma

    2015-11-01

    Full Text Available Dilution of the intake air of the SI engine with the inert gases is one of the emission control techniques like exhaust gas recirculation, water injection into combustion chamber and cyclic variability, without scarifying power output and/or thermal efficiency (TE. This paper investigates the effects of using argon (Ar gas to mitigate the spark ignition engine intake air to enhance the performance and cut down the emissions mainly nitrogen oxides. The input variables of this study include the compression ratio, stroke length, and engine speed and argon concentration. Output parameters like TE, volumetric efficiency, heat release rates, brake power, exhaust gas temperature and emissions of NOx, CO2 and CO were studied in a thermal barrier coated SI engine, under variable argon concentrations. Results of this study showed that the inclusion of Argon to the input air of the thermal barrier coated SI engine has significantly improved the emission characteristics and engine’s performance within the range studied.

  9. A new fission-fragment detector to complement the CACTUS-SiRi setup at the Oslo Cyclotron Laboratory

    CERN Document Server

    Tornyi, Tamás Gábor; Guttormsen, Magne; Larsen, Ann-Cecilie; Siem, Sunniva; Krasznahorkay, Attila; Csige, Lóránt

    2013-01-01

    An array of Parallel Plate Avalanche Counters (PPAC) for the detection of heavy ions has been developed. The new device, NIFF (Nuclear Instrument for Fission Fragments), consists of four individual detectors and covers $60\\%$ of 2$\\pi$. It was designed to be used in conjunction with the SiRi array of ${\\Delta}E-E$ silicon telescopes for light charged particles and fits into the CACTUS array of 28 large-volume NaI scintillation detectors at the Oslo Cyclotron Laboratory. The low-pressure gas-filled PPACs are sensitive for the detection of fission fragments, but are insensitive to scattered beam particles of light ions or light-ion ejectiles. The PPAC detectors of NIFF have good time resolution and can be used either to select or to veto fission events in in-beam experiments with light-ion beams and actinide targets. The powerful combination of SiRi, CACTUS, and NIFF provides new research opportunities for the study of nuclear structure and nuclear reactions in the actinide region. The new setup is particularly...

  10. A new fission-fragment detector to complement the CACTUS-SiRi setup at the Oslo Cyclotron Laboratory

    Science.gov (United States)

    Tornyi, T. G.; Görgen, A.; Guttormsen, M.; Larsen, A. C.; Siem, S.; Krasznahorkay, A.; Csige, L.

    2014-02-01

    An array of Parallel Plate Avalanche Counters (PPAC) for the detection of heavy ions has been developed. The new device, NIFF (Nuclear Instrument for Fission Fragments), consists of four individual detectors and covers 60% of 2π. It was designed to be used in conjunction with the SiRi array of ΔE-E silicon telescopes for light charged particles and fits into the CACTUS array of 28 large-volume NaI scintillation detectors at the Oslo Cyclotron Laboratory. The low-pressure gas-filled PPACs are sensitive for the detection of fission fragments, but are insensitive to scattered beam particles of light ions or light-ion ejectiles. The PPAC detectors of NIFF have good time resolution and can be used either to select or to veto fission events in in-beam experiments with light-ion beams and actinide targets. The powerful combination of SiRi, CACTUS, and NIFF provides new research opportunities for the study of nuclear structure and nuclear reactions in the actinide region. The new setup is particularly well suited to study the competition of fission and γ decay as a function of excitation energy.

  11. Effect of temperature on the carrier transport property of 4H-SiC based Schottky barrier diode

    Directory of Open Access Journals (Sweden)

    TONG Wulin

    2015-08-01

    Full Text Available In this paper,the current-voltage (I-V measurement under different temperatures was carried out on the 4H-SiC Schottky barrier diode (SBD purchased from Cree Inc.The carrier transport mechanism and the temperature effect of SBD were investigated through the theoretical simulation based on the experimental data.The Schottky barrier height is decreased and leakage current is increased sharply for SBD when the temperatures are increased.The SBD forward bias obeys the hot electron emission mechanism.Taking the image force correction and tunneling effect into consideration,the high leakage current under reverse bias can be reasonably explained and is good agreement with the experiment results.

  12. Growth and properties of LPCVD W-Si-N barrier layers

    NARCIS (Netherlands)

    Bystrova, S.; Holleman, J.; Woerlee, P.H.

    2001-01-01

    In this work the low-temperature low pressure chemical vapour deposition (LPCVD) of W�Si�N compounds in the WF6�NF3�SiH4�Ar system is presented. Layers were deposited on oxidised Si-wafers at 385 and 250

  13. Rectifying barrier at GaN/SiC hetero-junction studied with positron annihilation spectroscopy

    Institute of Scientific and Technical Information of China (English)

    Hu Yi-Fan; Beling C D

    2005-01-01

    Positron annihilation spectroscopy on GaN films grown on SiC substrate with MBE are presented. It is shown that the GaN/SiC interface is rectifying towards positrons, such that positrons can only travel from SiC to GaN and not vice versa. Potential steps seen by the positron at the GaN/SiC interface are calculated from experimental values of electron and positron work function. This "rectifying" effect has been successfully mimicked by inserting a thin region of very high electric field in the Variable Energy Positron Fit (VEPF) analysis. The built-in electric field is attributed to different positron affinities, dislocation and/or interface defects at the GaN/SiC interface.

  14. Design and spectrum calculation of 4H-SiC thermal neutron detectors using FLUKA and TCAD

    Science.gov (United States)

    Huang, Haili; Tang, Xiaoyan; Guo, Hui; Zhang, Yimen; Zhang, Yimeng; Zhang, Yuming

    2016-10-01

    SiC is a promising material for neutron detection in a harsh environment due to its wide band gap, high displacement threshold energy and high thermal conductivity. To increase the detection efficiency of SiC, a converter such as 6LiF or 10B is introduced. In this paper, pulse-height spectra of a PIN diode with a 6LiF conversion layer exposed to thermal neutrons (0.026 eV) are calculated using TCAD and Monte Carlo simulations. First, the conversion efficiency of a thermal neutron with respect to the thickness of 6LiF was calculated by using a FLUKA code, and a maximal efficiency of approximately 5% was achieved. Next, the energy distributions of both 3H and α induced by the 6LiF reaction according to different ranges of emission angle are analyzed. Subsequently, transient pulses generated by the bombardment of single 3H or α-particles are calculated. Finally, pulse height spectra are obtained with a detector efficiency of 4.53%. Comparisons of the simulated result with the experimental data are also presented, and the calculated spectrum shows an acceptable similarity to the experimental data. This work would be useful for radiation-sensing applications, especially for SiC detector design.

  15. Environmental and Mechanical Stability of Environmental Barrier Coated SA Tyrannohex SiC Composites Under Simulated Turbine Engine Environments

    Science.gov (United States)

    Zhu, Dongming; Halbig, Michael Charles; Sing, Mrityunjay

    2014-01-01

    The environmental stability and thermal gradient cyclic durability performance of SA Tyrannohex composites were investigated for turbine engine component applications. The work has been focused on investigating the combustion rig recession, cyclic thermal stress resistance and thermomechanical low cycle fatigue of uncoated and environmental barrier coated Tyrannohex SiC SA composites in simulated turbine engine combustion water vapor, thermal gradients, and mechanical loading conditions. Flexural strength degradations have been evaluated, and the upper limits of operating temperature conditions for the SA composite material systems are discussed based on the experimental results.

  16. Si(Li)探测器测谱中产生伪峰现象的分析%ANALYZING THE PHENOMENA OF FAKE PEAK PRODUCED IN Si(Li) DETECTOR'S MEASURING SPECTRUM

    Institute of Scientific and Technical Information of China (English)

    张开春; 吴丽萍; 周厚全; 李志勇

    2001-01-01

    The Be window is destroyed by chance during using the Si(Li) detector. After it is repaired, the detector is used to measure characteristic X-ray of following elements of V, Fe, Ni, Cu, Zn and Pb. The concomitent fake peak appears going with the photoelectric peak of above mentioned elements, and the ratio of two peaks' energy is nearly a constant. By experiment test and reason analysis, it is found that the fare peak is resulted from Li ions' contrary diraction drift in Si(Li) detector, which is caused by the suddenly sharp change of outward the degree of vacuum and high voltage.

  17. A New Bragg Reflector Enhanced UV Solar-Blind Photovoltaic Detector on Si

    Science.gov (United States)

    2007-11-02

    The objective of this project is to study MBE growth of PbSrSe with different Sr composition and the potential for detector applications. The PbSrSe...Preliminary MBE growth was successful. Future work will be focused on new detector structures on 110 orientation.

  18. Effectiveness of Diffusion Barrier Coatings for Mo-Re Embedded in C/SiC and C/C

    Science.gov (United States)

    Glass, David E.; Shenoy, Ravi N.; Wang, Zeng-Mei; Halbig, Michael C.

    2001-01-01

    Advanced high-temperature cooling applications may often require the elevated-temperature capability of carbon/silicon carbide or carbon/carbon composites in combination with the hermetic capability of metallic tubes. In this paper, the effects of C/SiC and C/C on tubes fabricated from several different refractory metals were evaluated. Though Mo, Nb, and Re were evaluated in the present study, the primary effort was directed toward two alloys of Mo-Re, namely, arc cast Mo-41Re and powder metallurgy Mo-47.5Re. Samples of these refractory metals were subjected to either the PyC/SiC deposition or embedding in C/C. MoSi2(Ge), R512E, and TiB2 coatings were included on several of the samples as potential diffusion barriers. The effects of the processing and thermal exposure on the samples were evaluated by conducting burst tests, microhardness surveys, and scanning electron microscopic examination (using either secondary electron or back scattered electron imaging and energy dispersive spectroscopy). The results showed that a layer of brittle Mo-carbide formed on the substrates of both the uncoated Mo-41Re and the uncoated Mo-47.5Re, subsequent to the C/C or the PyC/SiC processing. Both the R512E and the MoSi2(Ge) coatings were effective in preventing not only the diffusion of C into the Mo-Re substrate, but also the formation of the Mo-carbides. However, none of the coatings were effective at preventing both C and Si diffusion without some degradation of the substrate.

  19. Effect of radiation induced deep level traps on Si detector performance

    CERN Document Server

    Eremin, V; Li, Z

    2002-01-01

    The main factor, which leads to semiconductor detector degradation in high-energy physics experiments, is the introduction of lattice defects in the detector material produced by radiation. Based on the spectrum of radiation induced defects in the silicon bulk, the overview of effects and mechanisms responsible for the changes in the main detector parameters such as effective concentration of the space charge in the depleted region, space charge sign inversion, charge collection efficiency, and detector breakdown voltage are considered. Special attention is paid to the electric field distortion related with high concentration of radiation induced deep traps, which is the key question for the design of detectors operating at cryogenic temperature. In particular, the charge collection recovery at low temperature, often refereed as the Lazarus effect, and the limitation for the detection rate related to the polarization effect are considered.

  20. Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

    Energy Technology Data Exchange (ETDEWEB)

    Pastuović, Željko, E-mail: zkp@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Capan, Ivana [Material Physics Division, Institute Rudjer Boskovic, PO Box 180, 10000 Zagreb (Croatia); Cohen, David D. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Forneris, Jacopo [Physics Department and NIS Excellence Centre, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Iwamoto, Naoya; Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Siegele, Rainer [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Hoshino, Norihiro; Tsuchida, Hidekazu [Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan)

    2015-04-01

    We studied the radiation hardness of 4H-SiC Schottky barrier diodes (SBD) for the light ion detection and spectroscopy in harsh radiation environments. n-Type SBD prepared on nitrogen-doped (∼4 × 10{sup 14} cm{sup −3}) epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanning alpha particle microbeam (2 and 4 MeV He{sup 2+} ions separately) in order to create patterned damage structures at different depths within a sensitive volume of tested diodes. Deep Level Transient Spectroscopy (DLTS) analysis revealed the formation of two deep electron traps in the irradiated and not thermally treated 4H-SiC within the ion implantation range (E1 and E2). The E2 state resembles the well-known Z{sub 1/2} center, while the E1 state could not be assigned to any particular defect reported in the literature. Ion Beam Induced Charge (IBIC) microscopy with multiple He ion probe microbeams (1–6 MeV) having different penetration depths in tested partly damaged 4H-SiC SBD has been used to determine the degradation of the charge collection efficiency (CCE) over a wide fluence range of damaging alpha particle. A non-linear behavior of the CCE decrease and a significant degradation of the spectroscopic performance with increasing He ion fluence were observed above the value of 10{sup 11} cm{sup −2}.

  1. Determination of the efficiency curve for a Si-Li detector; Determinacion de la curva de eficiencia para un detector de Si-Li

    Energy Technology Data Exchange (ETDEWEB)

    Aldape U, F.; Oliver, A.; Montenegro, E.C. [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

    1986-02-15

    In this work it is carried out a new calibration method for an X-rays detection system for PIXE analysis. This method it bases on the parametric expression introduced by Gallaher and Cipola in which the efficiency curve is obtained adjusting the parameters that they represent the solid angle, the attenuation in the absorbers of low Z and the absorption in the sensitive region of the detector, starting from calibrated radioactive sources, in those which those ray-X emitted its are in most of E > 10 KeV. In the region E < 10 Kev, the quantity of experimental points is poor and also, due to the absorption problems, its are the points where greater experimental error is made. (Author)

  2. Superconducting single X-ray photon detector based on W0.8Si0.2

    Directory of Open Access Journals (Sweden)

    Xiaofu Zhang

    2016-11-01

    Full Text Available We fabricated a superconducting single X-ray photon detector based on W0.8Si0.2, and we characterized its basic detection performance for keV-photons at different temperatures. The detector has a critical temperature of 4.97 K, and it is able to be operated up to 4.8 K, just below the critical temperature. The detector starts to react to X-ray photons at relatively low bias currents, less than 1% of Ic at T = 1.8 K, and it shows a saturated count rate dependence on bias current at all temperatures, indicating that the optimum internal quantum efficiency can always be reached. Dark counts are negligible up to the highest investigated bias currents (99% of Ic and operating temperature (4.8 K. The latching effect affects the detector performance at all temperatures due to the fast recovery of the bias current; however, further modifications of the device geometry are expected to reduce the tendency for latching.

  3. Superconducting single X-ray photon detector based on W0.8Si0.2

    CERN Document Server

    Zhang, X; Schilling, A

    2016-01-01

    We fabricated a superconducting single X-ray photon detector based on W0.8Si0.2, and we characterized its basic detection performance for keV-photons at different temperatures. The detector has a critical temperature of 4.97 K, and it is able to be operated up to 4.8 K, just below the critical temperature. The detector starts to react to X-ray photons at relatively low bias currents, less than 1% of Ic at T = 1.8 K, and it shows a saturated count rate dependence on bias current at all temperatures, indicating that the optimum internal quantum efficiency can always be reached. Dark counts are negligible up to the highest investigated bias currents (99% of Ic) and operating temperature (4.8 K). The latching effect affects the detector performance at all temperatures due to the fast recovery of the bias current; however, further modifications of the device geometry are expected to reduce the tendency for latching.

  4. Charge collection in Si detectors irradiated in situ at superfluid helium temperature

    Science.gov (United States)

    Verbitskaya, Elena; Eremin, Vladimir; Zabrodskii, Andrei; Dehning, Bernd; Kurfürst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R.; Egorov, Nicolai; Härkönen, Jaakko

    2015-10-01

    Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K. Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1×1016 p/cm2. The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment.

  5. Heavy-ion fusion cross sections and barrier distributions for {sup 12}C, {sup 16}O, {sup 28}Si and {sup 35}Cl on {sup 92}Zr

    Energy Technology Data Exchange (ETDEWEB)

    Santhosh, K.P. [P G Department of Physics and Research Centre, Payyanur College, Payyanur-670327 (India)], E-mail: drkpsanthosh@gmail.com; Bobby Jose, V. [P G Department of Physics and Research Centre, Payyanur College, Payyanur-670327 (India); Joseph, Antony; Varier, K.M. [Department of Physics, University of Calicut, Calicut-673635 (India)

    2009-02-01

    The fusion excitation functions and barrier distributions for the fusion of {sup 12}C, {sup 16}O, {sup 28}Si and {sup 35}Cl on {sup 92}Zr have been calculated using one-dimensional barrier penetration model, taking scattering potential as the sum of Coulomb and proximity potential. Calculated results are compared with experimental data and CC calculations using code CCFULL. At and above the barrier the computed cross sections match well with the experimental data, whereas below the barrier, calculations with nuclear surface tension coefficient improved by Reisdorf in the proximity potential give good fit. Reduced reaction cross sections for the systems have also been described.

  6. Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H-SiC Schottky Barrier Diodes.

    Science.gov (United States)

    Lee, Seula; Lee, Jinseon; Kang, Tai-Young; Kyoung, Sinsu; Jung, Eun Sik; Kim, Kyung Hwan

    2015-11-01

    In this paper, we present the preparation and characterization of Schottky barrier diodes based on silicon carbide with various Schottky metal layer thickness values. In this structure, molybdenum and aluminum were employed as the Schottky barrier metal and top electrode, respectively. Schottky metal layers were deposited with thicknesses ranging from 1000 to 3000 Å, and top electrodes were deposited with thickness as much as 3000 Å. The deposition of both metal layers was performed using the facing target sputtering (FTS) method, and the fabricated samples were annealed with the tubular furnace at 300 degrees C under argon ambient for 10 min. The Schottky barrier height, series resistance, and ideality factor was calculated from the forward I-V characteristic curve using the methods proposed by Cheung and Cheung, and by Norde. For as-deposited Schottky diodes, we observed an increase of the threshold voltage (V(T)) as the thickness of the Schottky metal layer increased. After the annealing, the Schottky barrier heights (SBHs) of the diodes, including Schottky metal layers of over 2000 Å, increased. In the case of the Schottky metal layer deposited to 1000 Å, the barrier heights decreased due to the annealing process. This may have been caused by the interfacial penetration phenomenon through the Schottky metal layer. For variations of V(T), the SBH changed with a similar tendency. The ideality factor and series resistance showed no significant changes before or after annealing. This indicates that this annealing condition is appropriate for Mo SiC structures. Our results confirm that it is possible to control V(T) by adjusting the thickness of the Schottky metal layer.

  7. A low cost network of spectrometer radiation detectors based on the ArduSiPM a compact transportable Software/Hardware Data Acquisition system with Arduino DUE

    CERN Document Server

    Bocci, Valerio; Iacoangeli, Francesco; Nuccetelli, Massimo; Recchia, Luigi

    2015-01-01

    The necessity to use Photo Multipliers (PM) as light detector limited in the past the use of crystals in radiation handled device preferring the Geiger approach. The Silicon Photomultipliers (SiPMs) are very small and cheap, solid photon detectors with good dynamic range and single photon detection capability, they are usable to supersede in some application cumbersome and difficult to use Photo Multipliers (PM). A SiPM can be coupled with a scintillator crystal to build efficient, small and solid radiation detector. A cost effective and easily replicable Hardware software module for SiPM detector readout is made using the ArduSiPM solution [1]. The ArduSiPM is an easily battery operable handled device using an Arduino DUE (an open Software/Hardware board) as processor board and a piggy-back custom designed board (ArduSiPM Shield), the Shield contains all the blocks features to monitor, set and acquire the SiPM using internet network.

  8. High-efficiency superconducting nanowire single-photon detectors fabricated from MoSi thin-films

    CERN Document Server

    Verma, V B; Bussières, F; Horansky, R D; Dyer, S D; Lita, A E; Vayshenker, I; Marsili, F; Shaw, M D; Zbinden, H; Mirin, R P; Nam, S W

    2015-01-01

    We demonstrate high-efficiency superconducting nanowire single-photon detectors (SNSPDs) fabricated from MoSi thin-films. We measure a maximum system detection efficiency (SDE) of 87 +- 0.5 % at 1542 nm at a temperature of 0.7 K, with a jitter of 76 ps, maximum count rate approaching 10 MHz, and polarization dependence as low as 3.4 +- 0.7 % The SDE curves show saturation of the internal efficiency similar to WSi-based SNSPDs at temperatures as high as 2.3 K. We show that at similar cryogenic temperatures, MoSi SNSPDs achieve efficiencies comparable to WSi-based SNSPDs with nearly a factor of two reduction in jitter.

  9. Large area Si low-temperature light detectors with Neganov-Luke effect

    CERN Document Server

    Biassoni, M; Capelli, S; Cassina, L; Clemenza, M; Cremonesi, O; Faverzani, M; Ferri, E; Giachero, A; Gironi, L; Giordano, C; Gotti, C; Maino, M; Margesin, B; Nucciotti, A; Pavan, M; Pessina, G; Previtali, E; Puiu, A; Sisti, M; Terranova, F

    2015-01-01

    Next generation calorimetric experiments for the search of rare events rely on the detection of tiny amounts of light (of the order of 20 optical photons) to discriminate and reduce background sources and improve sensitivity. Calorimetric detectors are the simplest solution for photon detection at cryogenic (mK) temperatures. The development of silicon based light detectors with enhanced performance thanks to the use of the Neganov-Luke effect is described. The aim of this research line is the production of high performance detectors with industrial-grade reproducibility and reliability.

  10. SiPM-based veto detector for the pion beam at FOPI

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Gamal, E-mail: gsmoawad@hotmail.com; Buehler, Pual; Hartmann, Olaf; Marton, Johann; Suzuki, Ken; Zmeskal, Johann [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences (Austria)

    2012-05-15

    Recently the FOPI collaboration carried out an experiment to study the in medium properties of the K{sup + }K{sup - } system by using the pion beam interactions at 1.7 GeV/c. The experiment with a pion beam poses specific requirements to the detectors and therefore the original FOPI setup needed modifications. The new hardware developments for this experiment include the replacement of the veto detector with another more compact design. Within this report we describe the design and results of a test measurement of the new FOPI veto detector system with the pion beam.

  11. Ta-Si-N/Ti双层结构扩散阻挡层的制备与表征%Preparation and characterization of bilayer Ta-Si-N/Ti diffusion barrier layer

    Institute of Scientific and Technical Information of China (English)

    邓鹏远; 瞿金凤

    2013-01-01

      采用射频磁控溅射的方法在Si(100)衬底和Cu膜间制备了Ta-Si-N(10nm)/Ti(20nm)双层结构的扩散阻挡层。Cu/Ta-Si-N/Ti/Si样品在高纯氮气的保护下从600至800℃退火1小时。通过四探针电阻测试仪(FPP)、SEM、XRD研究了Cu/Ta-Si-N/Ti/Si系统在退火过程中的热稳定性。研究结果表明:沉积到Ti膜上的Ta-Si-N膜为非晶态结构;Cu/Ta-Si-N/Ti/Si样品700℃以上退火后Ti原子扩散到Si中形成的TiSi2能有效地降低Ta-Si-N与Si之间的接触电阻;Ta-Si-N/Ti阻挡层750℃退火后仍能有效地阻止Cu的扩散。%Ta-Si-N (10nm)/Ti(20nm) bilayer diffusion barrier was grown between n-type (100) silicon wafer and Cu film by RF reactive magnetron sputtering. The Cu/Ta-Si-N/Ti/Si samples were subsequently annealed at different temperatures ranging from 600 to 800℃in N2 gas for 1 h. In order to investigate the thermal stability of the barrier structure after annealing, X-ray diffraction, scanning electron microscopy and 4-point probe technique were performed, respectively. The results reveal that Ta-Si-N film deposited on Ti film is amorphous. In addition, the diffusion of Ti atoms into Si substrate results in TiSi2 which decreases the contact resistance between barrier Si and Ta-Si-N(10nm)/Ti(20nm) bilayer can serve as effective diffusion barriers up to 750℃.

  12. Design for a high-resolution small-animal spect system usingpixellated Si(Li) detectors for in vivo Iodine-125 imaging

    Energy Technology Data Exchange (ETDEWEB)

    Choong, Woon-Seng; Moses, William W.; Tindall, Craig S.; Luke,Paul N.

    2004-08-01

    We propose a design for a high-resolution single-photon emission computed tomography (SPECT) system for in vivo {sup 125}I imaging in small animal using pixellated lithium-drifted silicon (Si(Li)) detectors. The proposed detectors are expected to have high interaction probability (>90%), good energy resolution (<15% FWHM), and good intrinsic spatial resolution ({approx}1 mm FWHM). The SPECT system will consist of a dual head detector geometry with the distance between the detectors ranging 30-50 mm to minimize the imaging distance between the mouse and the detectors. The detectors, each with an active area of 64 mm x 40 mm (64 x 40 array of 1 mm{sup 2} pixels and a 6 mm thick Si(Li) detector), will be mounted on a rotating gantry with an axial field-of-view of 64 mm. The detector signals will be read out by custom application-specific integrated circuits (ASICs). Using a high-resolution parallel-hole collimator, the expected spatial resolution is 1.6 mm FWHM at an imaging distance of 20 mm, and sensitivity is 6.7 cps/{micro}Ci. {sup 125}I is a readily available radioisotope with a long half-life of 59.4 days and it is commonly used to label biological compounds in molecular biology. Conventional gamma cameras are not optimized to detect the low emission energies (27 to 35 keV) of {sup 125}I. However, Si(Li) detector provides an ideal solution for detecting the low-energy emissions of {sup 125}I. In addition to presenting the design of the system, this paper presents a feasibility study of using Si(Li) detectors to detect the emissions of {sup 125}I.

  13. A Systematic Study to Optimize SiPM Photo-Detectors for Highest Time Resolution in PET

    CERN Document Server

    Gundacker, S.; Frisch, B.; Hillemanns, H.; Jarron, P.; Meyer, T.; Pauwels, K.; Lecoq, P.

    2012-01-01

    We report on a systematic study of time resolution made with three different commercial silicon photomultipliers (SiPMs) (Hamamatsu MPPC S10931-025P, S10931-050P, and S10931-100P) and two LSO scintillating crystals. This study aimed to determine the optimum detector conditions for highest time resolution in a prospective time-of-flight positron emission tomography (TOF-PET) system. Measurements were based on the time over threshold method in a coincidence setup using the ultrafast amplifier-discriminator NINO and a fast oscilloscope. Our tests with the three SiPMs of the same area but of different SPAD sizes and fill factors led to best results with the Hamamatsu type of 50×50×μm2 single-pixel size. For this type of SiPM and under realistic geometrical PET scanner conditions, i.e., with 2×2×10×mm3 LSO crystals, a coincidence time resolution of 220 ±4 ps FWHM could be achieved. The results are interpreted in terms of SiPM photon detection efficiency (PDE), dark noise, and photon yield.

  14. Direct conversion Si and CdZnTe detectors for digital mammography

    CERN Document Server

    Yin Shi Shi; Maeding, D; Mainprize, J; Mawdsley, G; Yaffe, M J; Gordon, E E; Hamilton, W J

    2000-01-01

    Hybrid pixel detector arrays that convert X-rays directly into charge signals are under development at NOVA for application to digital mammography. This technology also has wide application possibilities in other fields of radiology or in industrial imaging, nondestructive evaluation (NDE) and nondestructive inspection (NDI). These detectors have potentially superior properties compared to either emulsion-based film-screen systems which has nonlinear response to X-rays, or phosphor-based detectors in which there is an intermediate step of X-ray to light photon conversion (Feig and Yaffe, Radiol. Clinics North America 33 (1995) 1205-1230). Potential advantages of direct conversion detectors are high quantum efficiencies (QE) of 98% or higher (for 0.3 mm thick CdZnTe detector with 20 keV X-rays), improved contrast, high sensitivity and low intrinsic noise. These factors are expected to contribute to high detective quantum efficiency (DQE). The prototype hybrid pixel detector developed has 50x50 mu m pixel size,...

  15. Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Durcan, Chris A.; Balsano, Robert [College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203 (United States); LaBella, Vincent P., E-mail: vlabella@albany.edu [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203 (United States)

    2015-06-28

    The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using ballistic electron emission microscopy (BEEM) over a period of 21 days to observe changes in the interface electrostatics. Initially, the average spectrum is fit to a Schottky barrier height of 0.71 eV, and the map is uniform with 98% of the spectra able to be fit. After 21 days, the average spectrum is fit to a Schottky barrier height of 0.62 eV, and the spatial map changes dramatically with only 27% of the spectra able to be fit. Transmission electron microscopy shows the formation of an ultra-thin tungsten silicide at the interface, which increases in thickness over the 21 days. This increase is attributed to an increase in electron scattering and the changes are observed in the BEEM measurements. Interestingly, little to no change is observed in the I-V measurements throughout the 21 day period.

  16. Modified-chitosan/siRNA nanoparticles downregulate cellular CDX2 expression and cross the gastric mucus barrier.

    Directory of Open Access Journals (Sweden)

    Ana Sadio

    Full Text Available Development of effective non-viral vectors is of crucial importance in the implementation of RNA interference in clinical routine. The localized delivery of siRNAs to the gastrointestinal mucosa is highly desired but faces specific problems such as the stability in gastric acidity conditions and the presence of the mucus barrier. CDX2 is a transcription factor critical for intestinal differentiation being involved in the initiation and maintenance of gastrointestinal diseases. Specifically, it is the trigger of gastric intestinal metaplasia which is a precursor lesion of gastric cancer. Its expression is also altered in colorectal cancer, where it may constitute a lineage-survival oncogene. Our main objective was to develop a nanoparticle-delivery system of siRNA targeting CDX2 using modified chitosan as a vector. CDX2 expression was assessed in gastric carcinoma cell lines and nanoparticles behaviour in gastrointestinal mucus was tested in mouse explants. We show that imidazole-modified chitosan and trimethylchitosan/siRNA nanoparticles are able to downregulate CDX2 expression and overpass the gastric mucus layer but not colonic mucus. This system might constitute a potential therapeutic approach to treat CDX2-dependent gastric lesions.

  17. Pilot tests of a PET detector using the TOF-PET ASIC based on monolithic crystals and SiPMs

    Science.gov (United States)

    Aguilar, A.; González-Montoro, A.; González, A. J.; Hernández, L.; Monzó, J. M.; Bugalho, R.; Ferramacho, L.; Benlloch, J. M.

    2016-12-01

    In this work we show pilot tests of PET detector blocks using the TOF-PET ASIC, coupled to SiPM detector arrays and different crystal configurations. We have characterized the main ASIC features running calibration processes to compensate the time dispersion among the different ASIC/SiPM paths as well as for the time walk on the arrival of optical photons. The aim of this work is to use of LYSO monolithic crystals and explore their photon Depth of Interaction (DOI) capabilities, keeping good energy and spatial resolutions. First tests have been carried out with crystal arrays. Here we made it possible to reach a coincidence resolving times (CRT) of 370 ps FWHM, with energy resolutions better than 20% and resolving well 2 mm sized crystal elements. When using monolithic crystals, a single-pixel LYSO reference crystal helped to explore the CRT performance. We studied different strategies to provide the best timestamp determination in the monolithic scintillator. Times around 1 ns FWHM have been achieved in these pilot studies. In terms of spatial and energy resolution, values of about 3 mm and better than 30% were found, respectively. We have also demonstrated the capability of this system (monolithic and ASIC) to return accurate DOI information.

  18. The front-end electronics for the 1.8-kchannel SiPM tracking plane in the NEW detector

    Science.gov (United States)

    Rodríguez, J.; Toledo, J.; Esteve, R.; Lorca, D.; Monrabal, F.

    2015-01-01

    NEW is the first phase of NEXT-100 experiment, an experiment aimed at searching for neutrinoless double-beta decay. NEXT technology combines an excellent energy resolution with tracking capabilities thanks to a combination of optical sensors, PMTs for the energy measurement and SiPMs for topology reconstruction. Those two tools result in one of the highest background rejection potentials in the field. This work describes the tracking plane that will be constructed for the NEW detector which consists of close to 1800 sensors with a 1-cm pitch arranged in twenty-eight 64-SiPM boards. Then it focuses in the development of the electronics needed to read the 1800 channels with a front-end board that includes per-channel differential transimpedance input amplifier, gated integrator, automatic offset voltage compensation and 12-bit ADC. Finally, a description of how the FPGA buffers data, carries out zero suppression and sends data to the DAQ interface using CERN RD-51 SRS's DTCC link specification complements the description of the electronics of the NEW detector tracking plane.

  19. The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

    CERN Document Server

    Watanabe, Shin; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin'ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Astushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Ohta, Masayuki; Onishi, Mitsunobu; Saito, Shinya; Sato, Goro; Sato, Tamotsu; Takahashi, Tadayuki; Tanaka, Takaaki; Togo, Atsushi; Tomizuka, Shinji

    2015-01-01

    The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60--600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm x 12 cm x 12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and ...

  20. Barrier SiO2-like coatings for archaeological artefacts preservation

    Science.gov (United States)

    Prochazka, M.; Blahova, L.; Krcma, F.

    2016-10-01

    Thin film chemical vapour deposition technique has been used for more than 50 years. Introducing organo-silicones as precursors, e.g. hexamethyldisiloxane (HMDSO) or tetraethyl orthosilicate (TEOS), brought new possibilities to this method. Barrier properties of thin films have become an important issue, especially for army and emergency services as well as for food and drink manufacturers. Our work is focused on protective HMDSO thin films for encapsulating cleaned archaeological artefacts, preventing the corrosion from destroying these historical items.Thin films are deposited via plasma enhanced chemical vapour deposition (PECVD) technique using low pressure capacitively coupled pasma in flow regime. Oxygen transmission rate (OTR) measurement was chosen as the most important one for characterization of barrier properties of deposited thin films. Lowest OTR reached for 50 nm thin film thickness was 120 cm3 m-2 atm-1 day-1. Samples were also analyzed by Fourier Transform Infrared spectrometry (FTIR) to determine their composition. Optical emission spectra and thin film thickness were measured during the deposition process. We optimized the deposition parameters for barrier layers by implementation of pulsed mode of plasma and argon plasma pre-treatment into the process.

  1. Enhancement of programming speed on gate-all-around poly-silicon nanowire nonvolatile memory using self-aligned NiSi Schottky barrier source/drain

    Science.gov (United States)

    Ho, Ching-Yuan; Chang, Yaw-Jen; Chiou, Y. L.

    2013-08-01

    The programming characteristics of gate-all-around silicon-oxide-nitride-oxide silicon (SONOS) nonvolatile memories are presented using NiSi/poly-Si nanowires (SiNW) Schottky barrier (SB) heterojunctions. The non-uniform thermal stress distribution on SiNW channels due to joule heating affected the carrier transport behavior. Under a high drain voltage, impact ionization was found as a large lateral field enhances carrier velocity. As gate voltage (Vg) increased, the difference in the drain current within a range of various temperature conditions can be mitigated because a high gate field lowers the SB height of a NiSi source/SiNW/NiSi drain junction to ensure efficient hot-carrier generation. By applying the Fowler-Nordheim programming voltage to the SONOS nanowire memory, the SB height (Φn = 0.34 eV) could be reduced by image force; thus, hot electrons could be injected from SB source/drain electrodes into the SiN storage node. To compare both SiNW and Si nanocrystal SONOS devices, the SB SiNW SONOS device was characterized experimentally to propose a wider threshold-voltage window, exhibiting efficient programming characteristics.

  2. Pulse height defect of energetic heavy ions in ion-implanted Si detectors

    Science.gov (United States)

    Pasquali, G.; Casini, G.; Bini, M.; Calamai, S.; Olmi, A.; Poggi, G.; Stefanini, A. A.; Saint-Laurent, F.; Steckmeyer, J. C.

    1998-02-01

    The pulse height defect in ion-implanted silicon detectors for elastically scattered 93Nb, 100Mo, 116Sn, 120Sn and 129Xe ions, at energies ranging from about 4 to 25 A MeV has been measured. The results are compared with two widely used parametrizations taken from the literature.

  3. Pulse height defect of energetic heavy ions in ion-implanted Si detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pasquali, G.; Casini, G.; Bini, M.; Calamai, S.; Olmi, A.; Poggi, G.; Stefanini, A.A. [Istituto Nazionale di Fisica Nucleare, Florence (Italy)]|[Univ. of Florence (Italy); Saint-Laurent, F. [DRFC/STEP, CEN Cadarache, 13108 Saint Paul Lez Durance Cedex (France); Steckmeyer, J.C. [Laboratoire de Physique Corpuscolaire, ISMRA, 14050 Caen Cedex (France)

    1998-03-01

    The pulse height defect in ion-implanted silicon detectors for elastically scattered {sup 93}Nb, {sup 100}Mo, {sup 116}Sn, {sup 120}Sn and {sup 129}Xe ions, at energies ranging from about 4 to 25 A MeV has been measured. The results are compared with two widely used parametrizations taken from the literature. (orig.). 14 refs.

  4. Innovative PET detector concept based on SiPMs and continuous crystals

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez Martinez, A.J., E-mail: agonzalez@i3m.upv.es [Instituto de Instrumentacion para Imagen Molecular (I3M), Centro Mixto UPV - CSIC - CIEMAT, Camino de Vera s/n, 46022 Valencia (Spain); ONCOVISION (GEM-Imaging S.A.), 46012 Valencia (Spain); Peiro Cloquell, A.; Sanchez Martinez, F.; Vidal San Sebastian, L.F.; Benlloch Baviera, J.M. [Instituto de Instrumentacion para Imagen Molecular (I3M), Centro Mixto UPV - CSIC - CIEMAT, Camino de Vera s/n, 46022 Valencia (Spain)

    2012-12-11

    The use of Silicon Photomultipliers (SiPM) has been proposed for Positron Emission Tomography (PET) readout because they are hardly affected by magnetic fields and their time response enables Time of Flight measurements. This work proposes an array of SiPM to be coupled to a monolithic LYSO crystal by means of a series of optical devices. The emitted light distribution by the scintillation crystal will be accurately determined using an Application Specific Integrated Circuit. The described sensor block aims to determine the planar coordinates and depth of interaction of the gamma ray with sub-millimetrical precision. In this work we present the initial studies regarding edge effects due to thick monolithic crystals and how to overcome these limitations by means of optical devices namely faceplates and light concentrators. We will also discuss on the alignment of such optical devices with the SiPMs.

  5. Upgrade of the POLDI diffractometer with a ZnS(Ag)/6LiF scintillation detector read out with WLS fibers coupled to SiPMs

    OpenAIRE

    Mosset, J. -B.; Stoykov, A.; Davydov, V.; Hildebrandt, M.; Van Swygenhoven, H.; W. Wagner

    2013-01-01

    A thermal neutron detector based on ZnS(Ag)/6LiF scintillator, wavelength-shifting fibers (WLS) and silicon photomultipliers (SiPM) is under development at the Paul Scherrer Institute (PSI) for upgrading the POLDI instrument, a pulse-overlap diffractometer. The design of the detector is outlined, and the measurements performed on a single channel prototype are presented. An innovative signal processing system based on a photon counting approach is under development. Its principle of operation...

  6. Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

    Science.gov (United States)

    Mandal, Krishna C.; Terry, J. Russell

    2016-12-06

    A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

  7. Development Status and Performance Comparisons of Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan

    2016-01-01

    Environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft turbine engine systems, because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. This paper presents current NASA EBC-CMC development emphases including: the coating composition and processing improvements, laser high heat flux-thermal gradient thermo-mechanical fatigue - environmental testing methodology development, and property evaluations for next generation EBC-CMC systems. EBCs processed with various deposition techniques including Plasma Spray, Electron Beam - Physical Vapor Deposition, and Plasma Spray Physical Vapor Deposition (PS-PVD) will be particularly discussed. The testing results and demonstrations of advanced EBCs-CMCs in complex simulated engine thermal gradient cyclic fatigue, oxidizing-steam and CMAS environments will help provide insights into the coating development strategies to meet long-term engine component durability goals.

  8. Plasmonic effect of Ag nanoparticles in a SiON antireflective coating: engineering rules and physical barrier

    Science.gov (United States)

    Lecler, S.; Bastide, S.; Tan, J.; Qu, M.; Slaoui, A.; Fix, T.

    2016-10-01

    Surface plasmon polaritons have been proposed in the architectures of several solar cells as a way to enhance light collection and thus to increase their efficiency. Here, Ag nanoparticles (NPs) are embedded in a SiON antireflective layer using an electroless technique. The plasmonic effects are modeled and observed experimentally for NPs 5 to 200 nm in size. The systematic comparison of scattering and extinction efficiencies computed as a function of the NPs and surrounding medium properties allows establishing engineering rules, validated by the experimental measurements. The fact that Ag NPs larger than 30 nm mainly contribute to light scattering and therefore to optical path enlargement (green-red light), whereas those smaller than 15 nm absorb light by light trapping (blue-green), is demonstrated and physically explained. A physical barrier making it impossible to shift the dominant resonance beyond 650 nm is pointed out.

  9. Plasma characterization of the gas-puff target source dedicated for soft X-ray microscopy using SiC detectors

    Directory of Open Access Journals (Sweden)

    Torrisi Alfio

    2016-06-01

    Full Text Available An Nd:YAG pulsed laser was employed to irradiate a nitrogen gas-puff target. The interaction gives rise to the emission of soft X-ray (SXR radiation in the ‘water window’ spectral range (λ= 2.3÷4.4 nm. This source was already successfully employed to perform the SXR microscopy. In this work, a Silicon Carbide (SiC detector was used to characterize the nitrogen plasma emission in terms of gas-puff target parameters. The measurements show applicability of SiC detectors for SXR plasma characterization.

  10. TU-F-18C-08: Micro-Calcification Detectability Using Spectral Breast CT Based On a Si Strip Detector

    Energy Technology Data Exchange (ETDEWEB)

    Cho, H; Ding, H; Molloi, S [University of California, Irvine, CA (United States); Barber, W; Iwanczyk, J [DxRay Inc., Northridge, CA (United States)

    2014-06-15

    Purpose: To investigate the feasibility of micro-calcification (μCa) detectability by using an energy-resolved photon-counting Si strip detector for spectral breast computed tomography (CT). Methods: A bench-top CT system was constructed using a tungsten anode x-ray source with a focal spot size of 0.8 mm and a single line 256-pixel Si strip photon counting detector with a pixel pitch of 100 μm. The slice thickness was 0.5 mm. Five different size groups of calcium carbonate grains, from 105 to 215 μm in diameter, were embedded in a cylindrical resin phantom with a diameter of 16 mm to simulate μCas. The phantoms were imaged at 65 kVp with an Entrance Skin Air Kerma (ESAK) of 1.2, 3, 6, and 8 mGy. The images were reconstructed using a standard filtered back projection (FBP) with a ramp filter. A total of 200 μCa images (5 different sizes of μCas × 4 different doses × 10 images for each setting) were combined with another 200 control images without μCas, to ultimately form 400 images for the reader study. The images were displayed in random order to three blinded observers, who were asked to give a binary score on each image regarding the presence of μCas. The μCa detectability for each image was evaluated in terms of binary decision theory metrics. The sensitivity, specificity, and accuracy were calculated to study the size and dose-dependence for μCa detectability. Additionally, the influence of the partial volume effect on the μCa detectability was investigated by simulation. Results: For a μCa larger than 140 μm in diameter, detection accuracy of above 90 % was achieved with the investigated prototype spectral CT system at ESAK of 1.2 mGy. Conclusion: The proposed Si strip detector is expected to offer superior image quality with the capability to detect μCas for low dose breast imaging.

  11. A Fast Calibration System for SiPM Based Scintillator HCAL Detector

    CERN Document Server

    Polak, I

    2015-01-01

    with mid-range a fixed-intensity light pulse. The full SiPM response function is cross-checked by varying the light intensity from zero to the saturation level. In calibration systems we developed, we concentrate especially on the aspect a high dynamic range of pre...

  12. Performance Study of an aSi Flat Panel Detector for Fast Neutron Imaging of Nuclear Waste

    Energy Technology Data Exchange (ETDEWEB)

    Schumann, M.; Mauerhofer, E. [Institute of Energy and Climate Research - Nuclear Waste Management and Reactor Safety, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Engels, R.; Kemmerling, G. [Central Institute for Engineering, Electronics and Analytics - Electronic Systems, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Frank, M. [MATHCCES - Department of Mathematics, RWTH Aachen University, 52062 Aachen (Germany); Havenith, A.; Kettler, J.; Klapdor-Kleingrothaus, T. [Institute of Nuclear Engineering and Technology Transfer, RWTH Aachen University, 52062 Aachen (Germany); Schitthelm, O. [Corporate Technology, Siemens AG, 91058 Erlangen (Germany)

    2015-07-01

    Radioactive waste must be characterized to check its conformance for intermediate storage and final disposal according to national regulations. For the determination of radio-toxic and chemo-toxic contents of radioactive waste packages non-destructive analytical techniques are preferentially used. Fast neutron imaging is a promising technique to assay large and dense items providing, in complementarity to photon imaging, additional information on the presence of structures in radioactive waste packages. Therefore the feasibility of a compact Neutron Imaging System for Radioactive waste Analysis (NISRA) using 14 MeV neutrons is studied in a cooperation framework of Forschungszentrum Juelich GmbH, RWTH Aachen University and Siemens AG. However due to the low neutron emission of neutron generators in comparison to research reactors the challenging task resides in the development of an imaging detector with a high efficiency, a low sensitivity to gamma radiation and a resolution sufficient for the purpose. The setup is composed of a commercial D-T neutron generator (Genie16GT, Sodern) with a surrounding shielding made of polyethylene, which acts as a collimator and an amorphous silicon flat panel detector (aSi, 40 x 40 cm{sup 2}, XRD-1642, Perkin Elmer). Neutron detection is achieved using a general propose plastic scintillator (EJ-260, Eljen Technology) linked to the detector. The thermal noise of the photodiodes is reduced by employing an entrance window made of aluminium. Optimal gain and integration time for data acquisition are set by measuring the response of the detector to the radiation of a 500 MBq {sup 241}Am-source. Detector performance was studied by recording neutron radiography images of materials with various, but well known, chemical compositions, densities and dimensions (Al, C, Fe, Pb, W, concrete, polyethylene, 5 x 8 x 10 cm{sup 3}). To simulate gamma-ray emitting waste radiographs in presence of a gamma-ray sources ({sup 60}Co, {sup 137}Cs, {sup 241

  13. Digital signal processing for a thermal neutron detector using ZnS(Ag):6LiF scintillating layers read out with WLS fibers and SiPMs

    Science.gov (United States)

    Mosset, J.-B.; Stoykov, A.; Greuter, U.; Hildebrandt, M.; Schlumpf, N.

    2016-07-01

    We present a digital signal processing system based on a photon counting approach which we developed for a thermal neutron detector consisting of ZnS(Ag):6LiF scintillating layers read out with WLS fibers and SiPMs. Three digital filters have been evaluated: a moving sum, a moving sum after differentiation and a digital CR-RC4 filter. The performances of the detector with these filters are presented. A full analog signal processing using a CR-RC4 filter has been emulated digitally. The detector performance obtained with this analog approach is compared with the one obtained with the best performing digital approach.

  14. Digital signal processing for a thermal neutron detector using ZnS(Ag):6LiF scintillating layers read out with WLS fibers and SiPMs

    CERN Document Server

    Mosset, J -B; Greuter, U; Hildebrandt, M; Schlumpf, N

    2015-01-01

    We present a digital signal processing system based on a photon counting approach which we developed for a thermal neutron detector consisting of ZnS(Ag):6LiF scintillating layers read out with WLS fibers and SiPMs. Three digital filters have been evaluated: a moving sum, a moving sum after differentiation and a digital CR-RC^4 filter. The performances of the detector with these filters are presented. A full analog signal processing using a CR-RC^4 filter has been emulated digitally. The detector performance obtained with this analog approach is compared with the one obtained with the best performing digital approach.

  15. 总剂量辐照SiO2/6H-SiC引起的界面势垒变化%Total Dose Radiation Induced Interface Barriers Changing of SiO2/6H-SiC Structure

    Institute of Scientific and Technical Information of China (English)

    牟维兵; 龚敏; 曹群

    2011-01-01

    辐照会引起MOS器件电介质氧化物与半导体界面势垒变化,影响其工作性能和可靠性.测量了n型6H-SiC MOS电容辐照105rad(Si)剂量前后的Ⅰ-Ⅴ线,通过Fowler-Nordheim(F-N)隧道电流拟合,得到了界面势垒的大小,辐照前的为2.596 eV,辐照后降为1.492eV.界面势垒变化主要是由辐照产生的界面态引起的.%The barrier between oxide and SiC interface would change due to irradiation.And operating characteristics would be affected. I-V curves of n-type 6H-SiC MOS capacitor before and after 105rad(Si) irradiation are measured. Interface barriers are calculated by FowlerNordheim tunneling fit. The barrier before irradiation is 2. 446 eV, and that is 1. 604 eV after irradiation. Shift of barrier is main due to acceptor type interface states produced by irradiation.

  16. Commissioning of the scatter component of a Compton camera consisting of a stack of Si strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Liprandi, S.; Marinsek, T.; Bortfeldt, J.; Lang, C.; Lutter, R.; Dedes, G.; Parodi, K.; Thirolf, P.G. [LMU Munich, Garching (Germany); Aldawood, S. [LMU Munich, Garching (Germany); King Saud University, Riyadh (Saudi Arabia); Maier, L.; Gernhaeuser, R. [TU Munich, Garching (Germany); Kolff, H. van der [LMU Munich, Garching (Germany); TU Delft (Netherlands); Castelhano, I. [LMU Munich, Garching (Germany); University of Lisbon, Lisbon (Portugal); Schaart, D.R. [TU Delft (Netherlands)

    2015-07-01

    At LMU Munich in Garching a Compton camera is presently being developed aiming at the range verification of proton (or ion) beams for hadron therapy via imaging of prompt γ rays from nuclear reactions in the tissue. The poster presentation focuses on the characterization of the scatter component of the Compton camera, consisting of a stack of six double-sided Si strip detectors (50 x 50 mm{sup 2}, 0.5 mm thick, 128 strips/side). The overall 1536 electronics channels are processed by a readout system based on the GASSIPLEX ASIC chip, feeding into a VME-based data acquisition system. The status of the offline and online characterization studies is presented.

  17. Detection of antihydrogen with a Si- mu -strip and CsI-crystal detector at cryogenic temperature

    CERN Document Server

    Regenfus, C

    2001-01-01

    ATHENA, one of 3 experiments at the new low energy antiproton facility at CERN (AD), is designed for testing fundamental physic principles (CPT, Gravitation) to a high degree of precision by comparing cold antihydrogen to hydrogen. To monitor the production of the antihydrogen atoms and their spectroscopic response, a new detector dedicated for the endproducts of antihydrogen annihilations was developed. To meet the requirements of low temperature operation (77 K) in a high magnetic field, compact size, low power consumption and high granularity, a combination of two layers of each 16 double sided Si- mu -strip modules (16 cm long) was chosen, surrounded by 192 pure-CsI crystals (each approximately= 4 cm/sup 3/), which are read by UV sensitive photo diodes. The frontend electronics (working point 77 K), realised in VLSI CMOS technique, features a self triggering capability of independent sub modules.

  18. Key Durability Issues with Mullite-Based Environmental Barrier Coatings for Si-Based Ceramics

    Science.gov (United States)

    Lee, Kang N.

    2000-01-01

    Plasma-sprayed mullite (3Al2O3.2SiO2) and mullite/yttria-stabilized-zirconia (YSZ) dual layer coatings have been developed to protect silicon -based ceramics from environmental attack. Mullite-based coating systems show excellent durability in air. However, in combustion environments, corrosive species such as molten salt or water vapor penetrate through cracks in the coating and attack the Si-based ceramics along the interface. Thus the modification of the coating system for enhanced crack-resistance is necessary for long-term durability in combustion environments. Other key durability issues include interfacial contamination and coating/substrate bonding. Interfacial contamination leads to enhanced oxidation and interfacial pore formation, while a weak coating/substrate bonding leads to rapid attack of the interface by corrosive species, both of which can cause a premature failure of the coating. Interfacial contamination can be minimized by limiting impurities in coating and substrate materials. The interface may be modified to improve the coating/substrate bond.

  19. Investigation of enzyme-sensitive lipid nanoparticles for delivery of siRNA to blood–brain barrier and glioma cells

    DEFF Research Database (Denmark)

    Bruun, Jonas; Larsen, Trine Bjørnbo; Jølck, Rasmus Irming

    2015-01-01

    Clinical applications of siRNA for treating disorders in the central nervous system require development of systemic stable, safe, and effective delivery vehicles that are able to cross the impermeable blood–brain barrier (BBB). Engineering nanocarriers with low cellular interaction during systemi...

  20. Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Tadjer, M. J., E-mail: marko.tadjer.ctr@nrl.navy.mil; Nyakiti, L. O.; Robinson, Z. [American Society for Engineering Education, Washington, DC 20036 (United States); Anderson, T. J.; Myers-Ward, R. L.; Wheeler, V. D.; Eddy, C. R.; Gaskill, D. K.; Koehler, A. D.; Hobart, K. D.; Kub, F. J. [U.S. Naval Research Laboratory, 4555 Overlook Ave, SW, Washington, DC 20375 (United States)

    2014-02-17

    Vertical rectifying contacts of epitaxial graphene grown by Si sublimation on the Si-face of 4H-SiC epilayers were investigated. Forward bias preferential conduction through the step edges was correlated by linear current density normalization. This phenomenon was observed on samples with 2.7–5.8 monolayers of epitaxial graphene as determined by X-ray photoelectron spectroscopy. A modified Richardson plot was implemented to extract the barrier height (0.81 eV at 290 K, 0.99 eV at 30 K) and the electrically dominant SiC step length of a Ti/Al contact overlapping a known region of approximately 0.52 μm wide SiC terraces.

  1. SiC Schottky Diode Detectors for Measurement of Actinide Concentrations from Alpha Activities in Molten Salt Electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States); Blue, Thomas [The Ohio State Univ., Columbus, OH (United States)

    2013-01-28

    In this project, we have designed a 4H-SiC Schottky diode detector device in order to monitor actinide concentrations in extreme environments, such as present in pyroprocessing of spent fuel. For the first time, we have demonstrated high temperature operation of such a device up to 500 °C in successfully detecting alpha particles. We have used Am-241 as an alpha source for our laboratory experiments. Along with the experiments, we have developed a multiscale model to study the phenomena controlling the device behavior and to be able to predict the device performance. Our multiscale model consists of ab initio modeling to understand defect energetics and their effect on electronic structure and carrier mobility in the material. Further, we have developed the basis for a damage evolution model incorporating the outputs from ab initio model in order to predict respective defect concentrations in the device material. Finally, a fully equipped TCAD-based device model has been developed to study the phenomena controlling the device behavior. Using this model, we have proven our concept that the detector is capable of performing alpha detection in a salt bath with the mixtures of actinides present in a pyroprocessing environment.

  2. Passage of Magnetic Tat-Conjugated Fe3O4@SiO2 Nanoparticles Across In Vitro Blood-Brain Barrier

    Science.gov (United States)

    Zhao, Xueqin; Shang, Ting; Zhang, Xiaodan; Ye, Ting; Wang, Dajin; Rei, Lei

    2016-10-01

    Delivery of diagnostic or therapeutic agents across the blood-brain barrier (BBB) remains a major challenge of brain disease treatment. Magnetic nanoparticles are actively being developed as drug carriers due to magnetic targeting and subsequently reduced off-target effects. In this paper, we developed a magnetic SiO2@Fe3O4 nanoparticle-based carrier bound to cell-penetrating peptide Tat (SiO2@Fe3O4 -Tat) and studied its fates in accessing BBB. SiO2@Fe3O4-Tat nanoparticles (NPs) exhibited suitable magnetism and good biocompatibility. NPs adding to the apical chamber of in vitro BBB model were found in the U251 glioma cells co-cultured at the bottom of the Transwell, indicating that particles passed through the barrier and taken up by glioma cells. Moreover, the synergistic effects of Tat and magnetic field could promote the efficient cellular internalization and the permeability across the barrier. Besides, functionalization with Tat peptide allowed particles to locate into the nucleus of U251 cells than the non-conjugated NPs. These results suggest that SiO2@Fe3O4-Tat NPs could penetrate the BBB through the transcytosis of brain endothelial cells and magnetically mediated dragging. Therefore, SiO2@Fe3O4-Tat NPs could be exploited as a potential drug delivery system for chemotherapy and gene therapy of brain disease.

  3. Comparative study of <111> and <100> crystals and capacitance measurements on Si strip detectors in CMS

    CERN Document Server

    Albergo, S; Azzi, P; Babucci, E; Bacchetta, N; Bader, A J; Bagliesi, G; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Buffini, A; Busoni, S; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Civinini, C; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Marina, R D; Dutta, S; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Fürtjes, A; Giassi, A; Giorgi, M A; Giraldo, A; Glessing, B; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Hrubec, Josef; Huhtinen, M; Kaminski, A; Karimäki, V; Saint-Koenig, M; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; Migliore, E; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Papi, A; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Raducci, V; Raffaelli, F; Raymond, M; Santocchia, A; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Skog, K; Starodumov, Andrei; Stavitski, I; Stefanini, G; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Xie, Z; Li Ya Hong; Watts, S; Wittmer, B

    1999-01-01

    For the construction of the silicon microstrip detectors for the tracker of the CMS experiment, two different substrate choices were investigated: A high-resistivity (6 k Omega cm) substrate with crystal orientation and a low-resistivity (2 k Omega cm) one with crystal orientation. The interstrip and backplane capacitances were measured before and after the exposure to radiation in a range of strip pitches from 60 mu m to 240 mu m and for values of the width-over-pitch ratio between 0.1 and 0.5. (3 refs).

  4. Evaluation of a SiPM array detector coupled to a LFS-3 pixellated scintillator for PET/MR applications

    Energy Technology Data Exchange (ETDEWEB)

    David, Stratos; Fysikopoulos, Eleftherios [Technological Educational Institute of Athens (Greece); Georgiou, Maria [Technological Educational Institute of Athens (Greece); Department of Medical School, University of Thessaly, Larissa (Greece); Loudos, George [Technological Educational Institute of Athens (Greece)

    2015-05-18

    SiPM arrays are insensitive to magnetic fields and thus good candidates for hybrid PET/MR imaging systems. Moreover, due to their small size and flexibility can be used in dedicated small field of view small animal imaging detectors and especially in head PET/MR studies in mice. Co-doped LFS-3 scintillator crystals have higher light yield and slightly faster response than that of LSO:Ce mainly due to the co-doped activation of emission centers with varying materials such as Ce, Gd, Sc, Y, La, Tb, or Ca distributed at the molecular scale through the lutetium silicate crystal host. The purpose of this study is to investigate the behavior of the SensL ArraySL-4 (4x4 element array of 3x3 mm{sup 2} silicon photomultipliers) optical detector coupled to a 6x6 LFS-3 scintillator array, with 2x2x5 mm{sup 3} crystal size elements, for possible applications in small field of view PET/MR imaging detectors. We have designed a symmetric resistive charge division circuit to read out the signal outputs of 4x4 pixel SiPM array reducing the 16 pixel outputs of the photodetector to 4 position signals. The 4 position signals were digitized using free running Analog to Digital Converters. The ADCs sampling rate was 50 MHz. An FPGA (Spartan 6 LX150T) was used for triggering and digital signal processing of the pulses. Experimental evaluation was carried out with {sup 22}Na radioactive source and the parameters studied where energy resolution and peak to valley ratio. The first preliminary results of the evaluation shows a clear visualization of the discrete 2x2x5 mm{sup 3} LFS-3 scintillator elements. The mean peak to valley ratio of the horizontal profiles on the raw image was measured equal to 11 while the energy resolution was calculated equal to 30% at the central pixels.

  5. Prototype Si microstrip sensors for the CDF-II ISL detector

    CERN Document Server

    Hara, K; Kanao, K; Kim, S; Ogasawara, M; Ohsugi, T; Shimojima, M; Takikawa, K

    1999-01-01

    Prototype Si microstrip sensors for the CDF-II ISL were fabricated by Hamamatsu Photonics and SEIKO Instruments using 4'' technology. The sensor is AC coupled and double-sided forming a stereo angle of 1.207 degree sign . The strip pitch is 112 mu m on both sides. The main differences between the two manufacturers lie on the technologies of passivation and the structure of coupling capacitors. We describe the design of the sensor and evaluation results of the performance. The evaluations include the total and individual strip currents and interstrip capacitance measured before and after sup 6 sup 0 Co gamma irradiation. (author)

  6. Emission reduction in SI engine using ethanol – gasoline blends on thermal barrier coated pistons

    Directory of Open Access Journals (Sweden)

    C.Ananda Srinivasan and C.G.Saravanan

    2010-07-01

    Full Text Available In this study, the effects of ethanol and unleaded gasoline with Isoheptanol blends on multi- cylinder SI engine were investigated. The test fuels were prepared using 99.9% pure ethanol and unleaded gasoline with Isoheptanol blend, in the ratio of E 60 + 2.0 Isoheptanol, E 50 + 1.0 Isoheptanol. In this work the performance, emission and combustion tests were conducted in multi-cylinder petrol engine. The experimental results reveal an increase in brake thermal efficiency on the use of test fuel. In the emission test, CO is found slightly decreased, while HC increased moderately and CO2 and NOx are appreciably reduced, when compared to the sole fuel. The second part of the investigation is carried out in the same engine with Alumina Titania coated crown of the pistons, to gain more inside improvement of engine performance and in-cylinder pressure for coated pistons. The experiment is repeated along with fuel additives and ethanol blends in the same blended ratio to analyse the performance and combustion characteristics of the engine. The results show marginal increase in brake thermal efficiency and reduction in CO, NOx, HC and CO2 emissions. In this study, combustion analyses are made with the help of AVL combustion analyzer, in which cylinder pressure, heat release rate and cumulative heat release are performed.

  7. Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

    Science.gov (United States)

    Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

    2016-08-01

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  8. 4H-SiC肖特基二极管α探测器研究%Study on 4H-SiC Schottky Diode Alpha-particle Detector

    Institute of Scientific and Technical Information of China (English)

    陈雨; 范晓强; 蒋勇; 吴健; 白立新; 柏松; 陈刚; 李理

    2013-01-01

    Silicon carbide (SiC) is a wide bandgap semiconductor material with excellent properties and an excellent medium for detectors. The resolution and relative rise - time of 3 mm × 3 mm 4H - SiC Schottky - diode are investigated with 5.486 MeV 241Am alpha - source. In the vacuum chamber,excellent signals from the SiC detector are observed exposing to alpha particles from 241Am source. The resolution of SiC detector for 5. 486 MeV alpha - particles is 3.4%. As the biased voltages increase, pulse height and relative rise - time from preamplifier FH1047 observed by oscilloscope are saturated to 35. 39 0.21mV and 137. 87 9.44ns, respectively. Well responded signals of SiC detector to alpha particles are observed, indicating that SiC can be used for alpha detection. Combining good resistance to radiation and high temperature, a kind of novel alpha detector and neutron detector with high resolution, fast rise times and high radiation resistance based on SiC Schottky - diode can be developed.%碳化硅(SiC)是一种具有优良物理性能的宽禁带半导体材料,可作为探测器的优良探测介质.用241Am源5.486 MeV的α粒子研究4H-SiC肖特基二极管α探测器的能量分辨率和信号相对上升时间等特性.在真空室中,使SiC探测器暴露在α粒子下,SiC探测器输出良好的响应信号.SiC二极管对5.486 MeVo粒子的能量分辨率最佳可达3.4%;经前置放大器FH1047输出和示波器观测,脉冲幅度随偏压增加而稳定在(35.39±0.21)mV;脉冲上升时间随偏压增加而稳定在(137.87 ±9.44) ns.4H-SiC肖特基二极管对α粒子响应良好,可用于α粒子强度测量.结合SiC耐辐照、耐高温等特性,进一步改进后有望制成分辨率更高、上升时间更快、耐辐照的新型α探测器和中子探测器.

  9. In-situ fabrication of MoSi2/SiC-Mo2C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo2C barrier layer at high temperature

    Science.gov (United States)

    Liu, Jun; Gong, Qianming; Shao, Yang; Zhuang, Daming; Liang, Ji

    2014-07-01

    MoSi2/SiC-Mo2C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo2C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi2/SiC layer on the upper part of Mo2C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), back scattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo2C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi2/SiC composite layer.

  10. In-situ fabrication of MoSi{sub 2}/SiC–Mo{sub 2}C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo{sub 2}C barrier layer at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jun [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Gong, Qianming, E-mail: gongqianming@mail.tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Shao, Yang; Zhuang, Daming [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); State Key Laboratory of New Ceramics and Fine Processing, Beijing 100084 (China); Liang, Ji [Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084 (China); Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China)

    2014-07-01

    MoSi{sub 2}/SiC–Mo{sub 2}C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo{sub 2}C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi{sub 2}/SiC layer on the upper part of Mo{sub 2}C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), backscattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo{sub 2}C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi{sub 2}/SiC composite layer.

  11. High Performance P-Channel Schottky Barrier MOSFETs with Self-Aligned PtSi Source/Drain on Thin Film SOI Substrate

    Institute of Scientific and Technical Information of China (English)

    ZHU Shi-Yang; LI Ming-Fu

    2005-01-01

    @@ P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with PtSi Schottky barrier source/drain, high-k gate dielectric and metal gate electrode were fabricated on a thin p-type silicon-on-insulator (SOI) substrateusing a simplified low temperature process. The device works on a fully-depleted accumulation-mode and hasan excellent electrical performance. It reaches Ion/Ioff ratio of about 107, subthreshold swing of 65mV/decade and saturation drain current of Ids= 8.8μA/μm at |Vg - Vth| = |Vd| = 1 V for devices with the channel length 4.0μm and the equivalent oxide thickness 2.0nm. Compared to the corresponding bulk-Si counterparts, SOI p-SBMOSFETs have smaller off-state current due to reduction of the PtSi/Si contact area.

  12. Electroless nickel alloy deposition on SiO2 for application as a diffusion barrier and seed layer in 3D copper interconnect technology.

    Science.gov (United States)

    Kim, Tae-Yoo; Son, Hwa-Jin; Lim, Seung-Kyu; Song, Young-Il; Park, Hwa-Sun; Suh, Su-Jeong

    2014-12-01

    Electroless Ni-P films were investigated with the aim of application as barrier and seed layers in 3D interconnect technology. Different shapes of blind-via holes were fabricated with a deep reactive ion etcher and SiO2 formed on these holes as an insulating layer. The surface of the substrate has been made hydrophilic by O2 plasma treatment with 100 W of power for 20 min. Electroless Ni-P films were deposited as both a diffusion barrier and a seed layer for Cu filling process. Prior to plating, substrates were activated in a palladium chloride solution after sensitization in a tin chloride solution with various conditions in order to deposit uniform films in TSV. After the formation of the electroless barrier layer, electro Cu was plated directly on the barrier layer. Ni-P films fabricated in blind-via holes were observed by scanning electron microscope. Energy dispersive spectroscopy line scanning was carried out for evaluating the diffusion barrier properties of the Ni-P films. The electroless Ni-P layer worked well as a Cu diffusion barrier until 300 degrees C. However, Cu ions diffused into barrier layer when the annealing temperature increases over 400 degrees C.

  13. Measuring the fusion cross-section of 39,47K + 28Si at near barrier energies

    Science.gov (United States)

    Vadas, Justin; Singh, Varinderjit; Wiggins, Blake; Huston, Jacob; Hudan, Sylvie; Desouza, Romualdo; Chbihi, Abdou; Ackermann, Dieter; Brown, Kyle

    2017-01-01

    The outer crust of an accreting neutron star provides an interesting environment for nuclear reactions to occur. In particular, the enhancement of fusion between neutron-rich nuclei relative to their β-stable counterparts has been suggested as a trigger for an X-ray superburst. Recently, nuclei in the mass range of A=20-40 have been proposed as the most likely candidates for this process. To investigate this question, comparing the fusion excitation functions for both neutron-rich and β-stable nuclei at energies near the fusion barrier is necessary. The development of a 47K radioactive beam at NSCL's ReA3 facility makes such a comparison possible for the first time. An approved experiment to measure the fusion excitation functions for 39,47K + 28Si will be described. This experiment utilizes a technique optimized for measuring the total fusion cross-section of reactions involving low-intensity (103 - 106 ions/s) radioactive beams. In addition, protons and α particles emitted by the compound nucleus as it de-excites are measured. Preliminary results will be presented. Supported by DOE Grant No. DE-FG02-88ER-40404 and NSF Grant No. 1342962.

  14. Detection of 14 MeV neutrons in high temperature environment up to 500 deg. C using 4H-SiC based diode detector

    Energy Technology Data Exchange (ETDEWEB)

    Szalkai, D.; Klix, A. [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344 (Germany); Ferone, R.; Issa, F.; Ottaviani, L.; Vervisch, V. [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231 -13397 Marseille Cedex 20 (France); Gehre, D. [Inst. for Nucl.- and Particle-Phys., Dresden University of Technology, Dresden 01069 (Germany); Lyoussi, A. [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance (France)

    2015-07-01

    In reactor technology and industrial applications detection of fast and thermal neutrons plays a crucial role in getting relevant information about the reactor environment and neutron yield. The inevitable elevated temperatures make neutron yield measurements problematic. Out of the currently available semiconductors 4H-SiC seems to be the most suitable neutron detector material under extreme conditions due to its high heat and radiation resistance, large band-gap and lower cost of production than in case of competing diamond detectors. In the framework of the European I-Smart project, optimal {sup 4}H-SiC diode geometries were developed for high temperature neutron detection and have been tested with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron flux of 10{sup 10}-10{sup 11} n/(s*cm{sup 2}) at Neutron Laboratory of the Technical University of Dresden in Germany from room temperatures up to several hundred degrees Celsius. Based on the results of the diode measurements, detector geometries appear to play a crucial role for high temperature measurements up to 500 deg. C. Experimental set-ups using SiC detectors were constructed to simulate operation in the harsh environmental conditions found in the tritium breeding blanket of the ITER fusion reactor, which is planned to be the location of neutron flux characterization measurements in the near future. (authors)

  15. The MINDView brain PET detector, feasibility study based on SiPM arrays

    Energy Technology Data Exchange (ETDEWEB)

    González, Antonio J., E-mail: agonzalez@i3m.upv.es [Institute for Instrumentation in Molecular Imaging (I3M), 46022 Valencia (Spain); Majewski, Stan [Radiology Research, Department of Radiology, University of Virginia, VA 22903 (United States); Sánchez, Filomeno [Institute for Instrumentation in Molecular Imaging (I3M), 46022 Valencia (Spain); Aussenhofer, Sebastian [NORAS MRI products GmbH, Hochberg (Germany); Aguilar, Albert; Conde, Pablo; Hernández, Liczandro; Vidal, Luis F. [Institute for Instrumentation in Molecular Imaging (I3M), 46022 Valencia (Spain); Pani, Roberto; Bettiol, Marco; Fabbri, Andrea [Department of Molecular Medicine, Sapienza University of Rome (Italy); Bert, Julien; Visvikis, Dimitris [Université de Bretagne Occidentale, Brest (France); Jackson, Carl; Murphy, John; O’Neill, Kevin [SensL Technologies, Cork (Ireland); Benlloch, Jose M. [Institute for Instrumentation in Molecular Imaging (I3M), 46022 Valencia (Spain)

    2016-05-11

    The Multimodal Imaging of Neurological Disorders (MINDView) project aims to develop a dedicated brain Positron Emission Tomography (PET) scanner with sufficient resolution and sensitivity to visualize neurotransmitter pathways and their disruptions in mental disorders for diagnosis and follow-up treatment. The PET system should be compact and fully compatible with a Magnetic Resonance Imaging (MRI) device in order to allow its operation as a PET brain insert in a hybrid imaging setup with most MRI scanners. The proposed design will enable the currently-installed MRI base to be easily upgraded to PET/MRI systems. The current design for the PET insert consists of a 3-ring configuration with 20 modules per ring and an axial field of view of ~15 cm and a geometrical aperture of ~33 cm in diameter. When coupled to the new head Radio Frequency (RF) coil, the inner usable diameter of the complete PET-RF coil insert is reduced to 26 cm. Two scintillator configurations have been tested, namely a 3-layer staggered array of LYSO with 1.5 mm pixel size, with 35×35 elements (6 mm thickness each) and a black-painted monolithic LYSO block also covering about 50×50 mm{sup 2} active area with 20 mm thickness. Laboratory test results associated with the current MINDView PET module concept are presented in terms of key parameters' optimization, such as spatial and energy resolution, sensitivity and Depth of Interaction (DOI) capability. It was possible to resolve all pixel elements from the three scintillator layers with energy resolutions as good as 10%. The monolithic scintillator showed average detector resolutions varying from 3.5 mm in the entrance layer to better than 1.5 mm near the photosensor, with average energy resolutions of about 17%.

  16. Detector characterization and first coincidence tests of a Compton telescope based on LaBr3 crystals and SiPMs

    Science.gov (United States)

    Llosá, G.; Barrio, J.; Cabello, J.; Crespo, A.; Lacasta, C.; Rafecas, M.; Callier, S.; de La Taille, C.; Raux, L.

    2012-12-01

    A Compton telescope for dose monitoring in hadron therapy consisting of several layers of continuous LaBr3 crystals coupled to silicon photomultiplier (SiPM) arrays is under development within the ENVISION project. In order to test the possibility of employing such detectors for the telescope, a detector head consisting of a continuous 16 mm×18 mm×5 mm LaBr3 crystal coupled to a SiPM array has been assembled and characterized, employing the SPIROC1 ASIC as readout electronics. The best energy resolution obtained at 511 keV is 6.5% FWHM and the timing resolution is 3.1 ns FWHM. A position determination method for continuous crystals is being tested, with promising results. In addition, the detector has been operated in time coincidence with a second detector layer, to determine the coincidence capabilities of the system. The first tests are satisfactory, and encourage the development of larger detectors that will compose the telescope prototype.

  17. Estimation of power dissipation of a 4H-SiC Schottky barrier diode with a linearly graded doping profile in the drift region

    Directory of Open Access Journals (Sweden)

    Rajneesh Talwar

    2009-09-01

    Full Text Available The aim of this paper is to establish the importance of a linearly graded profile in the drift region of a 4H-SiC Schottky barrier diode (SBD. The power dissipation of the device is found to be considerably lower at any given current density as compared to its value obtained for a uniformly doped drift region. The corresponding values of breakdown voltages obtained are similar to those obtained with uniformly doped wafers of 4H-SiC.

  18. Digital signal processing for a thermal neutron detector using ZnS(Ag):6LiF scintillating layers read out with WLS fibers and SiPMs

    OpenAIRE

    Mosset, J. -B.; Stoykov, A.; Greuter, U.; Hildebrandt, M.; Schlumpf, N.

    2015-01-01

    We present a digital signal processing system based on a photon counting approach which we developed for a thermal neutron detector consisting of ZnS(Ag):6LiF scintillating layers read out with WLS fibers and SiPMs. Three digital filters have been evaluated: a moving sum, a moving sum after differentiation and a digital CR-RC^4 filter. The performances of the detector with these filters are presented. A full analog signal processing using a CR-RC^4 filter has been emulated digitally. The dete...

  19. Nanoparticle mediated P-glycoprotein silencing for improved drug delivery across the blood-brain barrier: a siRNA-chitosan approach.

    Directory of Open Access Journals (Sweden)

    Jostein Malmo

    Full Text Available The blood-brain barrier (BBB, composed of tightly organized endothelial cells, limits the availability of drugs to therapeutic targets in the central nervous system. The barrier is maintained by membrane bound efflux pumps efficiently transporting specific xenobiotics back into the blood. The efflux pump P-glycoprotein (P-gp, expressed at high levels in brain endothelial cells, has several drug substrates. Consequently, siRNA mediated silencing of the P-gp gene is one possible strategy how to improve the delivery of drugs to the brain. Herein, we investigated the potential of siRNA-chitosan nanoparticles in silencing P-gp in a BBB model. We show that the transfection of rat brain endothelial cells mediated effective knockdown of P-gp with subsequent decrease in P-gp substrate efflux. This resulted in increased cellular delivery and efficacy of the model drug doxorubicin.

  20. The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/{omega}-V characteristics of Al-TiW-Pd{sub 2}Si/n-Si Schottky barrier diodes

    Energy Technology Data Exchange (ETDEWEB)

    Uslu, H.; Altindal, S.; Aydemir, U. [Department of Physics, Gazi University, 06500 Ankara (Turkey); Doekme, I., E-mail: ilbilgedokme@gazi.edu.t [Science Education Department, Gazi Education Faculty, Gazi University, 06500 Ankara (Turkey); Afandiyeva, I.M. [Baku State University, Baku (Azerbaijan)

    2010-07-30

    Illumination intensity effects on the electrical characteristics of Al-TiW-Pd{sub 2}Si/n-Si Schottky structures have been investigated in this study for the first time. The electrical parameters such as ideality factor (n), zero-bias-barrier height ({Phi}{sub B0}), series resistance (R{sub s}), depletion layer width (W{sub D}) and dopping concentration (N{sub D}) of Al-TiW-Pd{sub 2}Si/n-Si Schottky barrier diodes (SBDs) have been investigated by using the forward and reverse bias current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/{omega}-V) measurements in dark and under illumination conditions at room temperature. The values of C and G/{omega} increase with increasing illumination intensity due to the illumination induced electron-hole pairs in the depletion region. The density of interface states (N{sub ss}) distribution profiles as a function of (E{sub c} - E{sub ss}) was extracted from the forward I-V measurements by taking into account the bias dependence of the effective barrier heights ({Phi}{sub e}) for device in dark and under various illumination intensities. The high values of N{sub ss} were responsible for the nonideal behavior of I-V, C-V and G/{omega} characteristics. The values of R{sub s} obtained from Cheung and Nicollian methods decrease with increasing illumination intensity. The high values of n and R{sub s} have been attributed to the particular distribution of N{sub ss}, surface preparation, inhomogeneity of interfacial layer and barrier height at metal/semiconductor (M/S) interface. As a result, the characteristics of SBD are affected not only in N{sub ss} but also in R{sub s}, and these two parameters strongly influence the electrical parameters.

  1. Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

    Energy Technology Data Exchange (ETDEWEB)

    Omotoso, E., E-mail: ezekiel.omotoso@up.ac.za [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Departments of Physics, Obafemi Awolowo University, Ile-Ife 220005 (Nigeria); Meyer, W.E.; Auret, F.D.; Diale, M.; Ngoepe, P.N.M. [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa)

    2016-01-01

    Irradiation experiments have been carried out on 1.9×10{sup 16} cm{sup −3} nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6×10{sup 10} to 9.2×10{sup 11} cm{sup −2}. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation, respectively. As radiation fluence increases, the ideality factors increased from 1.20 to 1.85 but the Schottky barrier height (SBH{sub I–V}) decreased from 1.47 to 1.34 eV. Free carrier concentration, N{sub d} decreased with increasing fluence from 1.7×10{sup 16} to 1.1×10{sup 16} cm{sup −2} at approximately 0.70 μm depth. The reduction in N{sub d} shows that defects were induced during the irradiation and have effect on compensating the free carrier. The free carrier removal rate was estimated to be 6480±70 cm{sup −1}. Alpha-particle irradiation introduced two electron traps (E{sub 0.39} and E{sub 0.62}), with activation energies of 0.39±0.03 eV and 0.62±0.08 eV, respectively. The E{sub 0.39} as attribute related to silicon or carbon vacancy, while the E{sub 0.62} has the attribute of Z{sub 1}/Z{sub 2}.

  2. Influence of low energy argon plasma treatment on the moisture barrier performance of hot wire-CVD grown SiNx multilayers

    Science.gov (United States)

    Majee, Subimal; Fátima Cerqueira, Maria; Tondelier, Denis; Geffroy, Bernard; Bonnassieux, Yvan; Alpuim, Pedro; Bourée, Jean Eric

    2014-01-01

    The reliability and stability are key issues for the commercial utilization of organic photovoltaic devices based on flexible polymer substrates. To increase the shelf-lifetime of these devices, transparent moisture barriers of silicon nitride (SiNx) films are deposited at low temperature by hot wire CVD (HW-CVD) process. Instead of the conventional route based on organic/inorganic hybrid structures, this work defines a new route consisting in depositing multilayer stacks of SiNx thin films, each single layer being treated by argon plasma. The plasma treatment allows creating smoother surface and surface atom rearrangement. We define a critical thickness of the single layer film and focus our attention on the effect of increasing the number of SiNx single-layers on the barrier properties. A water vapor transmission rate (WVTR) of 2 × 10-4 g/(m2·day) is reported for SiNx multilayer stack and a physical interpretation of the plasma treatment effect is given.

  3. Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs

    Institute of Scientific and Technical Information of China (English)

    Tang Xiao-Yan; Zhang Yi-Men; Zhang Yu-Ming; Gao Jin-Xia

    2004-01-01

    Between source/drain and gate of SiC Schottky barrier source/drain MOSFET (SiC SBSD-MOSFET), there must be a sidewall as isolation. The width of sidewall strongly affects on the device performance. In this paper the effect of sidewall on the performance of 6H-SiC SBSD-NMOSFET is simulated with the 2D simulator MEDICI. The simulated results show that a sidewall with width less than 0.1μm slightly affects the device performance. However, when the width of sidewall exceeds 0.1μm, the conduction does not occur until the drain voltage is high enough and saturation current sharply decreases. The effect of the sidewall on device performance can be reduced by decreasing the doping concentration in the epitaxial layer.

  4. Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface

    Science.gov (United States)

    Sun, Xiaojuan; Li, Dabing; Jiang, Hong; Li, Zhiming; Song, Hang; Chen, Yiren; Miao, Guoqing

    2011-03-01

    GaN metal-semiconductor-metal (MSM) ultraviolet detectors were investigated by depositing different density of SiO2 nanoparticles (SNPs) on the GaN. It was shown that the dark current of the detectors with SNPs was more than one order of magnitude lower than that without SNPs and the peak responsivity was enhanced after deposition of the SNPs. Atomic force microscopy observations indicated that the SNPs usually formed at the termination of screw and mixed dislocations, and further current-voltage measurements showed that the leakage of the Schottky contact for the GaN MSM detector decreased with deposited the SNPs. Moreover, the leakage obeyed the Frenkel-Poole emission model, which meant that the mechanism for improving the performance is the SNPs passivation of the dislocations followed by the reduction in the dark current.

  5. The Development of Environmental Barrier Coating Systems for SiC-SiC Ceramic Matrix Composites: Environment Effects on the Creep and Fatigue Resistance

    Science.gov (United States)

    Zhu, Dongming; Ghosn, Louis J.

    2014-01-01

    Topics covered include: Environmental barrier coating system development: needs, challenges and limitations; Advanced environmental barrier coating systems (EBCs) for CMC airfoils and combustors; NASA EBC systems and material system evolutions, Current turbine and combustor EBC coating emphases, Advanced development, processing, testing and modeling, EBC and EBC bond coats: recent advances; Design tool and life prediction of coated CMC components; Advanced CMC-EBC rig demonstrations; Summary and future directions.

  6. Digital signal processing for a thermal neutron detector using ZnS(Ag):{sup 6}LiF scintillating layers read out with WLS fibers and SiPMs

    Energy Technology Data Exchange (ETDEWEB)

    Mosset, J.-B., E-mail: jean-baptiste.mosset@psi.ch; Stoykov, A.; Greuter, U.; Hildebrandt, M.; Schlumpf, N.

    2016-07-11

    We present a digital signal processing system based on a photon counting approach which we developed for a thermal neutron detector consisting of ZnS(Ag):{sup 6}LiF scintillating layers read out with WLS fibers and SiPMs. Three digital filters have been evaluated: a moving sum, a moving sum after differentiation and a digital CR-RC{sup 4} filter. The performances of the detector with these filters are presented. A full analog signal processing using a CR-RC{sup 4} filter has been emulated digitally. The detector performance obtained with this analog approach is compared with the one obtained with the best performing digital approach. - Highlights: • Application of digital signal processing for a SiPM-based ZnS:6LiF neutron detector. • Optimisation of detector performances with 3 different digital filters. • Comparison with detector performances with a full analog signal processing.

  7. α and 3He production in the 7Be+28Si reaction at near-barrier energies: Direct versus compound-nucleus mechanisms

    Science.gov (United States)

    Sgouros, O.; Pakou, A.; Pierroutsakou, D.; Mazzocco, M.; Acosta, L.; Aslanoglou, X.; Betsou, Ch.; Boiano, A.; Boiano, C.; Carbone, D.; Cavallaro, M.; Grebosz, J.; Keeley, N.; La Commara, M.; Manea, C.; Marquinez-Duran, G.; Martel, I.; Nicolis, N. G.; Parascandolo, C.; Rusek, K.; Sánchez-Benítez, A. M.; Signorini, C.; Soramel, F.; Soukeras, V.; Stefanini, C.; Stiliaris, E.; Strano, E.; Strojek, I.; Torresi, D.

    2016-10-01

    The production of α and 3He particles, the cluster constituents of 7Be, in the 7Be+28Si reaction was studied at three near-barrier energies, namely 13, 20, and 22 MeV. Angular distribution measurements were performed at each energy, and the data were analyzed in both statistical model and Distorted-Wave Born Approximation (DWBA) frameworks in order to disentangle the degree of competition between direct and compound channels. The energy evolution of the ratio of direct to total reaction cross section was mapped in comparison with similar data for 6Li and 7Li projectiles on a 28Si target. The results indicate larger transfer contributions for collisions involving the mirror nuclei 7Be and 7Li than in the 6Li case. Fusion cross sections were deduced, taking into account the α -particle cross sections due to compound-nucleus formation and particle multiplicities deduced from our statistical model framework. It was found that fusion is compatible with systematics and single-barrier penetration cross sections to within an uncertainty band of 10% to 20%. Indications of fusion hindrance for 7Li and 7Be compared to 6Li, starting from the barrier and below it, are given. This hindrance is attributed to the existence of large transfer channels. Furthermore, the experimental results, analyzed in the DWBA framework, suggest 3He and 4He transfer as the dominant direct reaction mechanism.

  8. 阻挡杂质带红外探测器中的界面势垒效应∗%Interfacial barrier effects in blo cked impurity band infrared detectors

    Institute of Scientific and Technical Information of China (English)

    廖开升; 李志锋; 李梁; 王超; 周孝好; 戴宁; 李宁

    2015-01-01

    Blocked impurity band (BIB) detectors, developed from extrinsic detectors, have long been employed for ground-based and airborne astronomical imaging and photon detections. They are the state-of-the-art choice for highly sensitive detection from mid-infrared to far-infrared radiation. In this work, we demonstrate the existence of an interfacial barrier in blocked impurity band structures by evidence of temperature-dependent dark currents, bias-dependent photocurrent spectra and corresponding theoretical calculations. The origin of the build-in field is studied. The temperature-dependent characteristics of space charge effects are also investigated in detail. It is found that at higher temperature (T >14 K), the space charge influence is negligible, and the interfacial barrier is mainly caused by bandgap narrowing effects. Based on interfacial barrier effects, a dual-excitation model is proposed to clarify the band structure of BIB detectors. The photocurrent spectra related to the two excitation processes, i.e., the direct excitation over the interfacial barrier and excitation to the band edge with subquent tunneling into blocking layer, are successfully extracted and agree reasonably well with the calculated band structure results. The effects of interfacial barrier on the photocurrent spectrum, peak responsivity and internal quantum efficiency of the devices are investigated. With the consideration of interfacial barrier effects, the calculated peak responsivity shows good agreement with the experimental result. It is suggested that interfacial barrier effects should be considered for successfully designing the BIB detectors. Additionally, the build-in field is found to equivalently lower the critical field for impact ionization. This study provides a better understanding of the working mechanism in BIB detectors and also a better device optimization.

  9. 4$\\pi$ detector for study of Zeno effect using 220Rn -> 216Po alpha->alpha correlated chains

    CERN Document Server

    Nadderd, L; Subotic, K; Polyakov, A N; Lobanov, Y V; Rykhlyuk, A V

    2015-01-01

    First test of the 4pi detector for study of exponential law of radioactive decay and possibility of observation of Zeno effect [1-3], measuring the mean life of 216Po is presented. This detector consists of two surface-barrier n-Si(Au) detectors placed in the close contact ( 4T1/2. Both, the data acquisition system and the vacuum chamber design are presented in brief.

  10. Measurement of the top Yukawa Coupling at a 1 TeV International Linear Collider using the SiD detector

    CERN Document Server

    Roloff, Philipp

    2013-01-01

    One of the detector benchmark processes investigated for the SiD Detailed Baseline Design (DBD) is given by: $e^+ e^- \\to t\\bar{t}H$, where H is the Standard Model Higgs boson of mass 125 GeV. The study is carried out at a centre-of-mass energy of 1 TeV and assuming an integrated luminosity of 1 ab$^{-1}$. The physics aim is a direct measurement of the top Yukawa coupling at the ILC. Higgs boson decays to beauty quark-antiquark pairs are reconstructed. The investigated final states contain eight jets or six jets, one charged lepton and missing energy. Additionally, four of the jets in signal events are caused by beauty quark decays. The analysis is based on a full simulation of the SiD detector using GEANT4. Beam-related backgrounds from $\\gamma\\gamma \\to$ hadrons interactions and incoherent $e^+ e^-$ pairs are considered. This study addresses various aspects of the detector performance: jet clustering in complex hadronic final states, flavour-tagging and the identification of high energy leptons.

  11. Electroluminescence from a forward-biased Schottky barrier diode on modulation Si {delta}-doped GaAs/InGaAs/AlGaAs heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Babinski, Adam; Witczak, P.; Twardowski, A.; Baranowski, J. M.

    2001-06-18

    Electroluminescence (EL) from a forward-biased Schottky barrier diode on modulation Si {delta}-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure with high mobility electron gas is investigated in this work. It has been found that the EL from the InGaAs quantum well can be observed at temperatures up to 90 K. The EL line shape depends on the current density, which reflects the filling of the InGaAs channel with electrons. The total integrated EL intensity depends linearly on the current density. We propose that hole diffusion from an inversion layer at the Schottky barrier is responsible for the observed optical recombination with electrons in the InGaAs quantum well. {copyright} 2001 American Institute of Physics.

  12. Generalization of the one dimensional modeling and design considerations of spiral Si drift detectors: Flat (straight) drift channels and constant drift fields

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Manwen, E-mail: mwliu1993@163.com; Li, Zheng, E-mail: zhengli58@gmail.com

    2016-07-11

    The one-dimensional design consideration for the spiral (cylindrical geometry) Si drift detector (SDD) has been modified and generalized for small drift distance (R) compatible to the detector thickness (d), i.e. for R–d, and for non uniform backside biasing situations. By applying a non uniform biasing voltage with a gradient similar (proportional) to the front side, one can increase the reach-through voltage, resulting in a large drift field for carriers. This can be important for large R (>3 mm). With a careful design of electric field profiles on both sides, one can obtain the optimum case of a spiral SDD with a straight (flat) drift channel and constant drift field throughout the carrier drift channel. The previous solution in the literature is an approximation of this work for R»d and with a curved drift channel.

  13. Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray, gamma ray spectroscopic detector development

    Energy Technology Data Exchange (ETDEWEB)

    Niraula, Madan; Yasuda, Kazuhito; Yamashita, Hayate; Wajima, Yuto; Tsukamoto, Yudai; Matsumoto, Masahiko; Suzuki, Yuta; Takai, Noriaki; Tsukamoto, Yuki; Agata, Yasunori [Nagoya Institute of Technology, Graduate School of Engineering, Gokiso, Showa, Nagoya 466-8555 (Japan)

    2014-07-15

    We investigated MOVPE growth conditions to grow large-area and thick single crystal CdTe layers with uniform material properties directly on (211) Si substrates to develop nuclear radiation detectors. We found that group VI/II precursor flow-ratio as well as rapid thermal annealing performed by interrupting the growth at the initial stage has marked influence on the crystal quality. By using a VI/II precursor ratio of 3.0, and a 900 C anneal performed in flowing hydrogen, we were able to achieve 1-sq inch sized thick single crystal CdTe that showed uniform material properties and high crystal quality throughout the wafer. We further demonstrated that the grown crystals were suitable for fabricating nuclear radiation detector. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Generalization of the one dimensional modeling and design considerations of spiral Si drift detectors: Flat (straight) drift channels and constant drift fields

    Science.gov (United States)

    Liu, Manwen; Li, Zheng

    2016-07-01

    The one-dimensional design consideration for the spiral (cylindrical geometry) Si drift detector (SDD) has been modified and generalized for small drift distance (R) compatible to the detector thickness (d), i.e. for R-d, and for non uniform backside biasing situations. By applying a non uniform biasing voltage with a gradient similar (proportional) to the front side, one can increase the reach-through voltage, resulting in a large drift field for carriers. This can be important for large R (>3 mm). With a careful design of electric field profiles on both sides, one can obtain the optimum case of a spiral SDD with a straight (flat) drift channel and constant drift field throughout the carrier drift channel. The previous solution in the literature is an approximation of this work for R»d and with a curved drift channel.

  15. Time-of-flight ERD with a 200 mm2 Si3N4 window gas ionization chamber energy detector

    Science.gov (United States)

    Julin, Jaakko; Laitinen, Mikko; Sajavaara, Timo

    2014-08-01

    Low energy heavy ion elastic recoil detection work has been carried out in Jyväskylä since 2009 using home made timing detectors, a silicon energy detector and a timestamping data acquisition setup forming a time-of-flight-energy telescope. In order to improve the mass resolution of the setup a new energy detector was designed to replace the silicon solid state detector, which suffered from radiation damage and had poor resolution for heavy recoils. In this paper the construction and operation of an isobutane filled gas ionization chamber with a 14 × 14 mm2 100 nm thick silicon nitride window are described. In addition to greatly improved energy resolution for heavy ions, the detector is also able to detect hydrogen recoils simultaneously in the energy range of 100-1000 keV. Additionally the detector has position sensitivity by means of timing measurement, which can be performed without compromising the performance of the detector in any other way. The achieved position sensitivity improves the depth resolution near the surface.

  16. SiC-based neutron detector in quasi-realistic working conditions: efficiency and stability at room and high temperature under fast neutron irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Ferone, Raffaello; Issa, Fatima; Ottaviani, Laurent; Biondo, Stephane; Vervisch, Vanessa [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231,13397 Marseille Cedex 20, (France); Szalkai, Dora; Klix, Axel [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344, (Germany); Vermeeren, Ludo [SCK-CEN, Boeretang 200, B-2400 Mol, (Belgium); Saenger, Richard [Schlumberger, Clamart, (France); Lyoussi, Abadallah [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance, (France)

    2015-07-01

    In the framework of the European I SMART project, we have designed and made new SiC-based nuclear radiation detectors able to operate in harsh environments and to detect both fast and thermal neutrons. In this paper, we report experimental results of fast neutron irradiation campaign at high temperature (106 deg. C) in quasi-realistic working conditions. Our device does not suffer from high temperature, and spectra do show strong stability, preserving features. These experiments, as well as others in progress, show the I SMART SiC-based device skills to operate in harsh environments, whereas other materials would strongly suffer from degradation. Work is still demanded to test our device at higher temperatures and to enhance efficiency in order to make our device fully exploitable from an industrial point of view. (authors)

  17. Spatially-resolved photocapacitance measurements to study defects in a-Si:H based p-i-n particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Casteleiro, C. [Departamento de Fisica, Instituto Superior Tecnico, Lisboa (Portugal); Schwarz, R. [Departamento de Fisica, Instituto Superior Tecnico, Lisboa (Portugal)], E-mail: rschwarz@fisica.ist.utl.pt; Mardolcar, U. [Departamento de Fisica, Instituto Superior Tecnico, Lisboa (Portugal); Macarico, A.; Martins, J.; Vieira, M. [Departamento de Electronica e Informatica, Instituto Superior de Engenharia de Lisboa, Lisboa (Portugal); Wuensch, F.; Kunst, M. [Hahn-Meitner-Institut, Solare Energetik, Berlin (Germany); Morgado, E. [Departamento de Engenharia Electrotecnica, Instituto Superior Tecnico, Lisboa (Portugal); Stallinga, P.; Gomes, H.L. [Departamento de Electrotecnia, Universidade do Algarve, Faro (Portugal)

    2008-06-02

    Thick large-area particle or X-ray detectors suffer degradation during operation due to creation of defects that act as deep traps. Measuring the photocurrent under homogeneously absorbed weak light can monitor variation in detector performance. We describe how photocapacitance can be used as an alternative method to measure the creation of defects and their energy level after intense irradiation with protons or He ions at 1.5 MeV and after exposure to intense laser pulses. The possibility to detect small areas of high defect density in a large-area detector structure is discussed.

  18. Graphene-enhanced, internal-magnetic-field-generated Rabi oscillations in metal-coated Si-SiO2 photoconductive detectors

    CERN Document Server

    Nalla, Venkatram; Loh, Kian Ping; Ji, Wei

    2013-01-01

    We report our demonstration of Rabi oscillations in Si-SiO2-Al photoconductive devices with nanosecond laser pulses of a few nJ at room temperature without external magnetic fields. Zeeman splitting of spin quantum states of dopants in silicon is achieved with internal magnetic fields produced by the Al film under excitation of laser pulses. Rabi oscillation frequency is 15 MHz and 25 MHz when photocurrent direction is perpendicular and parallel, respectively, to the propagation direction of linearly-polarized, 532-nm, 7-ns laser pulses. Insertion of graphene buffer layer between Al and SiO2 provides a three-fold enhancement in Rabi oscillation amplitude. This simple-structured, low-cost device operated at room temperature should open a new avenue for future spin-based electronics and optoelectronics.

  19. SU-C-201-01: Investigation of the Effects of Scintillator Surface Treatment On Light Output Measurements with SiPM Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Valenciaga, Y; Prout, D; Chatziioannou, A [University of California, Los Angeles (UCLA) (United States)

    2015-06-15

    Purpose: To examine the effect of different scintillator surface treatments (BGO crystals) on the fraction of scintillation photons that exit the crystal and reach the photodetector (SiPM). Methods: Positron Emission Tomography is based on the detection of light that exits scintillator crystals, after annihilation photons deposit energy inside these crystals. A considerable fraction of the scintillation light gets trapped or absorbed after going through multiple internal reflections on the interfaces surrounding the crystals. BGO scintillator crystals generate considerably less scintillation light than crystals made of LSO and its variants. Therefore, it is crucial that the small amount of light produced by BGO exits towards the light detector. The surface treatment of scintillator crystals is among the factors affecting the ability of scintillation light to reach the detectors. In this study, we analyze the effect of different crystal surface treatments on the fraction of scintillation light that is detected by the solid state photodetector (SiPM), once energy is deposited inside a BGO crystal. Simulations were performed by a Monte Carlo based software named GATE, and validated by measurements from individual BGO crystals coupled to Philips digital-SiPM sensor (DPC-3200). Results: The results showed an increment in light collection of about 4 percent when only the exit face of the BGO crystal, is unpolished; compared to when all the faces are polished. However, leaving several faces unpolished caused a reduction of at least 10 percent of light output when the interaction occurs as far from the exit face of the crystal as possible compared to when it occurs very close to the exit face. Conclusion: This work demonstrates the advantages on light collection from leaving unpolished the exit face of BGO crystals. The configuration with best light output will be used to obtain flood images from BGO crystal arrays coupled to SiPM sensors.

  20. Highly conformal SiO2/Al2O3 nanolaminate gas-diffusion barriers for large-area flexible electronics applications.

    Science.gov (United States)

    Choi, Jin-Hwan; Kim, Young-Min; Park, Young-Wook; Park, Tae-Hyun; Jeong, Jin-Wook; Choi, Hyun-Ju; Song, Eun-Ho; Lee, Jin-Woo; Kim, Cheol-Ho; Ju, Byeong-Kwon

    2010-11-26

    The present study demonstrates a flexible gas-diffusion barrier film, containing an SiO(2)/Al(2)O(3) nanolaminate on a plastic substrate. Highly uniform and conformal coatings can be made by alternating the exposure of a flexible polyethersulfone surface to vapors of SiO(2) and Al(2)O(3), at nanoscale thickness cycles via RF-magnetron sputtering deposition. The calcium degradation test indicates that 24 cycles of a 10/10 nm inorganic bilayer, top-coated by UV-cured resin, greatly enhance the barrier performance, with a permeation rate of 3.79 × 10(-5) g m(-2) day(-1) based on the change in the ohmic behavior of the calcium sensor at 20 °C and 50% relative humidity. Also, the permeation rate for 30 cycles of an 8/8 nm inorganic bilayer coated with UV resin was beyond the limited measurable range of the Ca test at 60 °C and 95% relative humidity. It has been found that such laminate films can effectively suppress the void defects of a single inorganic layer, and are significantly less sensitive against moisture permeation. This nanostructure, fabricated by an RF-sputtering process at room temperature, is verified as being useful for highly water-sensitive organic electronics fabricated on plastic substrates.

  1. Effect of SiNx diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol–gel dip coating and reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Mohamed Nawfal Ghazzal

    2015-10-01

    Full Text Available We investigate the effect of the thickness of the silicon nitride (SiNx diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol–gel and physical methods (reactive sputtering are affected differentially by the intercalating SiNx diffusion barrier. Increasing the thickness of the SiNx diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol–gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiNx barrier diffusion. The SiNx barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed.

  2. Effect of SiN x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol-gel dip coating and reactive magnetron sputtering.

    Science.gov (United States)

    Ghazzal, Mohamed Nawfal; Aubry, Eric; Chaoui, Nouari; Robert, Didier

    2015-01-01

    We investigate the effect of the thickness of the silicon nitride (SiN x ) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol-gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiN x diffusion barrier. Increasing the thickness of the SiN x diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol-gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiN x barrier diffusion. The SiN x barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed.

  3. Impact of metal overhang and guard ring techniques on breakdown voltage of Si strip sensors - 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

    CERN Document Server

    Ranjan, K; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The importance of Si sensors in high-energy physics (HEP) experiments can hardly be overemphasized. However, the high luminosity and the high radiation level in the future HEP experiments, like Large Hadron Collider (LHC), has posed a serious challenge to the fabrication of Si detectors. For the safe operation over the full LHC lifetime, detectors are required to sustain very high voltage operation, well exceeding the bias voltage needed to full deplete the heavily irradiated Si sensors. Thus, the main effort in the development of Si sensors is concentrated on a design that avoids p-n junction breakdown at operational biases. Among various proposed techniques, Field-limiting Ring (FLR) (or guard ring) and Metal-Overhang (MO) are technologically simple and are suitable for vertical devices. Since high-voltage planar Si junctions are of great importance in the HEP experiments, it is very interesting to compare these two aforementioned techniques for achieving the maximum breakdown voltage under optimal conditio...

  4. Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers.

    Science.gov (United States)

    Herrmann, Christoph; Engel, Klaus-Jürgen; Wiegert, Jens

    2010-12-21

    . The possible choices are, however, quite limited, since only 'mature' materials, which operate at room temperature and can be manufactured reliably should reasonably be considered. Since GaAs is still known to cause reliability problems, the simplest choice is Si, however with the drawback of strong Compton scatter which can cause considerable inter-pixel cross-talk. To investigate the potential and the problems of Si in a multi-layer detector, in this paper the combination of top detector layers made of Si with lower layers made of Cd[Zn]Te is studied by using Monte Carlo simulated detector responses. It is found that the inter-pixel cross-talk due to Compton scatter is indeed very high; however, with an appropriate cross-talk correction scheme, which is also described, the negative effects of cross-talk are shown to be removed to a very large extent.

  5. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    Science.gov (United States)

    Terriza, Antonia; Vilches-Pérez, Jose I.; de la Orden, Emilio; Yubero, Francisco; Gonzalez-Caballero, Juan L.; González-Elipe, Agustin R.; Vilches, José; Salido, Mercedes

    2014-01-01

    The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide) (PLGA) membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD), onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR). HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes. PMID:24883304

  6. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Antonia Terriza

    2014-01-01

    Full Text Available The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide (PLGA membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD, onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR. HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes.

  7. Validation of an analytical method for simultaneous high-precision measurements of greenhouse gas emissions from wastewater treatment plants using a gas chromatography-barrier discharge detector system.

    Science.gov (United States)

    Pascale, Raffaella; Caivano, Marianna; Buchicchio, Alessandro; Mancini, Ignazio M; Bianco, Giuliana; Caniani, Donatella

    2017-01-13

    Wastewater treatment plants (WWTPs) emit CO2 and N2O, which may lead to climate change and global warming. Over the last few years, awareness of greenhouse gas (GHG) emissions from WWTPs has increased. Moreover, the development of valid, reliable, and high-throughput analytical methods for simultaneous gas analysis is an essential requirement for environmental applications. In the present study, an analytical method based on a gas chromatograph (GC) equipped with a barrier ionization discharge (BID) detector was developed for the first time. This new method simultaneously analyses CO2 and N2O and has a precision, measured in terms of relative standard of variation RSD%, equal to or less than 6.6% and 5.1%, respectively. The method's detection limits are 5.3ppmv for CO2 and 62.0ppbv for N2O. The method's selectivity, linearity, accuracy, repeatability, intermediate precision, limit of detection and limit of quantification were good at trace concentration levels. After validation, the method was applied to a real case of N2O and CO2 emissions from a WWTP, confirming its suitability as a standard procedure for simultaneous GHG analysis in environmental samples containing CO2 levels less than 12,000mg/L.

  8. Response of a CsI/amorphous-Si flat panel detector as function of incident x-ray angle

    Science.gov (United States)

    Tkaczyk, J. Eric; Claus, Bernhard; Trotter, Dinko Gonzalez; Eberhard, J. W.

    2006-03-01

    Two mechanisms for MTF dependence on incident x-ray angle are demonstrated by an experimental technique that separates the two phenomena. The dominant effect is that travel of x-ray photons through the scintillator at non-normal incidence involves an in-plane component. This mechanism leads to a significant but deterministic blurring of the incident image, but has no effect on the noise transfer characteristics of the detector. A secondary effect is that at large angles to the surface normal, x-ray-to-optical conversion occurs at positions in the scintillator further away from the photodiode surface. This leads to a small net decrease in MTF and NPS at angles above 60 degrees. The deterministic character of the angular dependence of gain, MTF and NPS leads to the conclusion that sufficient angular range can be supported by this detector construction. Excellent functionality in the context of tomography is expected.

  9. UVSiPM: a light detector instrument based on a SiPM sensor working in single photon counting

    CERN Document Server

    Sottile, G; Agnetta, G; Belluso, M; Billotta, S; Biondo, B; Bonanno, G; Catalano, O; Giarrusso, S; Grillo, A; Impiombato, D; La Rosa, G; Maccarone, M C; Mangano, A; Marano, D; Mineo, T; Segreto, A; Strazzeri, E; Timpanaro, M C; 10.1016/j.nuclphysbps.2013.05.040

    2013-01-01

    UVSiPM is a light detector designed to measure the intensity of electromagnetic radiation in the 320-900 nm wavelength range. It has been developed in the framework of the ASTRI project whose main goal is the design and construction of an end-to-end Small Size class Telescope prototype for the Cherenkov Telescope Array. The UVSiPM instrument is composed by a multipixel Silicon Photo-Multiplier detector unit coupled to an electronic chain working in single photon counting mode with 10 nanosecond double pulse resolution, and by a disk emulator interface card for computer connection. The detector unit of UVSiPM is of the same kind as the ones forming the camera at the focal plane of the ASTRI prototype. Eventually, the UVSiPM instrument can be equipped with a collimator to regulate its angular aperture. UVSiPM, with its peculiar characteristics, will permit to perform several measurements both in lab and on field, allowing the absolute calibration of the ASTRI prototype.

  10. UVSiPM: A light detector instrument based on a SiPM sensor working in single photon counting

    Energy Technology Data Exchange (ETDEWEB)

    Sottile, G.; Russo, F.; Agnetta, G. [Istituto di Astrofisica Spaziale e Fisica Cosmica di Palermo, IASF-Pa/INAF, Palermo (Italy); Belluso, M.; Billotta, S. [Osservatorio Astrofisico di Catania, OACT/INAF, Catania (Italy); Biondo, B. [Istituto di Astrofisica Spaziale e Fisica Cosmica di Palermo, IASF-Pa/INAF, Palermo (Italy); Bonanno, G. [Osservatorio Astrofisico di Catania, OACT/INAF, Catania (Italy); Catalano, O.; Giarrusso, S. [Istituto di Astrofisica Spaziale e Fisica Cosmica di Palermo, IASF-Pa/INAF, Palermo (Italy); Grillo, A. [Osservatorio Astrofisico di Catania, OACT/INAF, Catania (Italy); Impiombato, D.; La Rosa, G.; Maccarone, M.C.; Mangano, A. [Istituto di Astrofisica Spaziale e Fisica Cosmica di Palermo, IASF-Pa/INAF, Palermo (Italy); Marano, D. [Osservatorio Astrofisico di Catania, OACT/INAF, Catania (Italy); Mineo, T.; Segreto, A.; Strazzeri, E. [Istituto di Astrofisica Spaziale e Fisica Cosmica di Palermo, IASF-Pa/INAF, Palermo (Italy); Timpanaro, M.C. [Osservatorio Astrofisico di Catania, OACT/INAF, Catania (Italy)

    2013-06-15

    UVSiPM is a light detector designed to measure the intensity of electromagnetic radiation in the 320–900 nm wavelength range. It has been developed in the framework of the ASTRI project whose main goal is the design and construction of an end-to-end Small Size class Telescope prototype for the Cherenkov Telescope Array. The UVSiPM instrument is composed by a multipixel Silicon Photo-Multiplier detector unit coupled to an electronic chain working in single photon counting mode with 10 nanosecond double pulse resolution, and by a disk emulator interface card for computer connection. The detector unit of UVSiPM is of the same kind as the ones forming the camera at the focal plane of the ASTRI prototype. Eventually, the UVSiPM instrument can be equipped with a collimator to regulate its angular aperture. UVSiPM, with its peculiar characteristics, will permit to perform several measurements both in lab and on field, allowing the absolute calibration of the ASTRI prototype.

  11. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    Energy Technology Data Exchange (ETDEWEB)

    Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

    2015-10-05

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.

  12. Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

    Science.gov (United States)

    Taşçıoğlu, İ.; Tüzün Özmen, Ö.; Şağban, H. M.; Yağlıoğlu, E.; Altındal, Ş.

    2017-04-01

    In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage ( C- V) and conductance-voltage ( G/ ω- V) measurements in the frequency range of 10 kHz-2 MHz. The C- V- f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states ( N ss). The values of N ss located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant ( ɛ') and dielectric loss ( ɛ″) decrease with increasing frequency, whereas loss tangent (tan δ) remains nearly the same. The decrease in ɛ' and ɛ″ was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity ( σ ac) and electric modulus ( M' and M″) increase with increasing frequency.

  13. Improving the Reliability of Si Die Attachment with Zn-Sn-Based High-Temperature Pb-Free Solder Using a TiN Diffusion Barrier

    Science.gov (United States)

    Kim, Seongjun; Kim, Keun-Soo; Kim, Sun-Sik; Suganuma, Katsuaki; Izuta, Goro

    2009-12-01

    The thermal fatigue reliability of Si die-attached joints with Zn-30wt.%Sn, high-temperature, Pb-free solder was investigated, focusing on the interfacial microstructure and joining strength of a Cu/solder/Cu joint during thermal cycling. A sound die attachment on an aluminum nitride (AlN) direct-bonded copper (DBC) substrate was achieved by forming Cu-Zn intermetallic compound (IMC) layers at the interface with the Cu of the substrate. During the thermal cycling test performed between -40°C and 125°C, thermal fatigue cracks were induced by the growth of Cu-Zn IMCs at the interface with the Cu. A thin titanium nitride (TiN) film was applied to suppress the formation of Cu-Zn IMCs. Adequate joint formation was accomplished by using an Au/TiN-coated DBC substrate, and only the TiN layer was observed at both interfaces. In conjunction with the TiN diffusion barrier, the Si die-attached joint created with Zn-30wt.%Sn solder exhibited a stable interfacial microstructure during thermal cycling. No microstructural changes, such as IMC formation, grain growth or formation of fatigue cracks, were observed, and the joining strength was maintained even after 2000 cycles.

  14. Dimensionless parameterization of lidar for laser remote sensing of the atmosphere and its application to systems with SiPM and PMT detectors.

    Science.gov (United States)

    Agishev, Ravil; Comerón, Adolfo; Rodriguez, Alejandro; Sicard, Michaël

    2014-05-20

    In this paper, we show a renewed approach to the generalized methodology for atmospheric lidar assessment, which uses the dimensionless parameterization as a core component. It is based on a series of our previous works where the problem of universal parameterization over many lidar technologies were described and analyzed from different points of view. The modernized dimensionless parameterization concept applied to relatively new silicon photomultiplier detectors (SiPMs) and traditional photomultiplier (PMT) detectors for remote-sensing instruments allowed predicting the lidar receiver performance with sky background available. The renewed approach can be widely used to evaluate a broad range of lidar system capabilities for a variety of lidar remote-sensing applications as well as to serve as a basis for selection of appropriate lidar system parameters for a specific application. Such a modernized methodology provides a generalized, uniform, and objective approach for evaluation of a broad range of lidar types and systems (aerosol, Raman, DIAL) operating on different targets (backscatter or topographic) and under intense sky background conditions. It can be used within the lidar community to compare different lidar instruments.

  15. Cerenkov light identification with Si low-temperature detectors with Neganov-Luke effect-enhanced sensitivity

    CERN Document Server

    Gironi, L; Brofferio, C; Capelli, S; Carniti, P; Cassina, L; Clemenza, M; Cremonesi, O; Faverzani, M; Ferri, E; Fossati, E; Giachero, A; Gotti, C; Maino, M; Margesin, B; Moretti, F; Nucciotti, A; Pavan, M; Pessina, G; Pozzi, S; Previtali, E; Puiu, A; Sisti, M; Terranova, F

    2016-01-01

    A new generation of cryogenic light detectors exploiting Neganov-Luke effect to enhance the thermal signal has been used to detect the Cherenkov light emitted by the electrons interacting in TeO$_{2}$ crystals. With this mechanism a high significance event-by-event discrimination between alpha and beta/gamma interactions at the $^{130}$Te neutrino-less double beta decay Q-value - (2527.515 $\\pm$ 0.013) keV - has been demonstrated. This measurement opens the possibility of drastically reducing the background in cryogenic experiments based on TeO$_{2}$.

  16. Growth and characterization of rutile TiO2 nanorods on various substrates with fabricated fast-response metal-semiconductor-metal UV detector based on Si substrate

    Science.gov (United States)

    Selman, Abbas M.; Hassan, Z.

    2015-07-01

    Rutile-phase titanium dioxide nanorods (NRs) were synthesized successfully on p-type silicon (Si) (1 1 1), c-plane sapphire (Al2O3), glass coated with fluorine-doped tin oxide (FTO), glass, and quartz substrates via chemical bath deposition method. All substrates were seeded with a TiO2 seed layer synthesized with a radio frequency reactive magnetron sputtering system prior to NRs growth. The effect of substrate type on structural, morphological, and optical properties of rutile TiO2 NRs was studied. X-ray diffraction, Raman spectroscopy, and field-emission scanning electron microscopy analyses showed the tetragonal rutile structure of the synthesized TiO2 NRs. Optical properties were examined with photoluminescence (PL) spectroscopy of the grown rutile NRs on all substrates, with the spectra exhibiting one strong ultraviolet emission peak intensity compared with broad visible peak. The optimal sample of rutile NRs was grown on Si substrate. Thus, a fast-response metal-semiconductor-metal ultraviolet (UV) detector was fabricated. Upon exposure to 365 nm light (2.3 mW/cm2) at 5 V bias, the device displays 2.62 × 10-5 A photocurrent, and the response and recovery times are calculated as 18.5 and 19.1 ms, respectively. These results demonstrate that the fabricated high-quality photodiode is a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  17. Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate

    Science.gov (United States)

    Yasuda, K.; Niraula, M.; Fujimura, N.; Tachi, T.; Inuzuka, H.; Namba, S.; Muramatsu, S.; Kondo, T.; Agata, Y.

    2012-10-01

    We present reverse bias current (dark current) characteristics of a two-dimensional monolithic pixel-type nuclear radiation detector array fabricated using metalorganic vapor-phase epitaxy (MOVPE)-grown thick CdTe epitaxial layers on Si substrate. The (14 × 8) pixel array was formed by cutting deep vertical trenches using a dicing saw, where each pixel possesses a p-CdTe/ n-CdTe/ n +-Si heterojunction diode structure. The dark currents showed pixel-to-pixel variations when measured at higher applied biases exceeding 100 V. The dark current had a dependence on the pixel thickness, where pixels with lower CdTe thickness exhibited higher currents. Moreover, the temperature dependence of the dark current revealed that a deep level with activation energy of around 0.6 eV is responsible for the observed dark currents and their pixel-to-pixel variation. We discuss that the effective ratio of Te to Cd at the growth surface is a major factor that controls the thickness variation, and is also responsible for the formation of 0.6 eV deep levels.

  18. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  19. 一种带新型功率检测电路的SiGe功率放大器设计%SiGe Power Amplifier with A Novel Power Detector

    Institute of Scientific and Technical Information of China (English)

    陈春青; 郝明丽; 郭瑞; 陈晓哲; 杨浩

    2013-01-01

    A two-stage SiGe power amplifier was designed for the protocol of ISO/IEC 18000-6C and could be used for handheld ultra high frequency radio frequency identification devices (UHF RFID)reader.Basing on the requirement of maximum output power,a novel method was used to reckon the emitter area needed for the power amplifier with reference value for the design based on the heterojunction bipolar transistots (HBTs) technology.Also a novel self-biased power detector was introduced,can save the die size occupation of the power detector and guarantee the performance at the same time.With a supply voltage of 3.3 V,the test results show that the output power can reach 24.1 dBm at the 1 dB compression point with a power added efficiency of 26.6% and the output voltage of the power detector is 2.63 V.The chip size included all the pads is 0.6 mm × 0.72 mm.%针对ISO/IEC 18000-6C协议的应用要求,设计了一款应用于手持超高频无线射频识别(UHF RFID)读写器输出端的两级SiGe功率放大器.在设计中采用了一种新型的晶体管面积推算方法,能够根据最大输出功率的要求,较准确的推算出所需要的晶体管发射极面积,对于基于异质结双极晶体管(HBT)工艺的功率放大器设计有一定的参考价值.此外还提出了一种新型的自偏置功率检测电路结构,在保证检测性能的同时减小了芯片面积.实际测试结果显示,在3.3V的偏压下,功率放大器在1 dB压缩点处的输出功率可以达到24.1 dBm,对应的功率附加效率为26.6%,功率检测电平为2.63 V.整体芯片面积为0.6 mm×0.72 mm.

  20. Novel Photo-Detectors and Photo-Detector Systems

    OpenAIRE

    Danilov, M.

    2008-01-01

    Recent developments in photo-detectors and photo-detector systems are reviewed. The main emphasis is made on Silicon Photo-Multipliers (SiPM) - novel and very attractive photo-detectors. Their main features are described. Properties of detectors manufactured by different producers are compared. Different applications are discussed including calorimeters, muon detection, tracking, Cherenkov light detection, and time of flight measurements.

  1. Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2016-08-21

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  2. Si-PIN探测器灵敏体积最优厚度的MC模拟%Monte Carlo Simulations of the Thickness of the Sensitive Volume in Si-PIN Type X-ray Detector

    Institute of Scientific and Technical Information of China (English)

    李柯; 吴和喜; 严川

    2015-01-01

    Si-PIN探测器灵敏材料厚度影响探测时间、探测结果可靠性及设备价格。从能量响应谱的比对研究证实EGS4模拟适用于Si-PIN探测器能量色散X荧光仪的设计分析。通过不同入射X射线对不同厚度灵敏体积的Si-PIN探测器的能量响应模拟研究发现:探测器灵敏体积最优厚度随待测X射线的能量增加而变厚,厚度与特征峰计数或峰总比的饱和厚度相等。%Real time of detection, the reliability of the detecting results and the cost of detector are affected by thickness of the sensitive material in Si -PIN semiconductor detector.EGS4 platform is appropriate for the study of energy-dispersive X-ray fluorescence design and analysis by the comparison of the simulated and the real detector energy response.A lot of detector response spectrum from these interactions between different thickness of the sensitive material in Si-PIN type X-ray detector and different energy of X-ray was acquired based on EGS4 platform.Count of characteristic peak and Peak-to-Total ratio was applied to depict the per-formance of Si-PIN semiconductor detector and calculate from the above detector response spectrum.The study found that the saturation thickness goes up with energy increasing,and optimal thickness of the sensitive volume is equal with the saturation thickness of count of characteristic peak and Peak-to-Total ratio.

  3. Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures

    Science.gov (United States)

    Altındal Yerişkin, S.; Balbaşı, M.; Demirezen, S.

    2017-01-01

    In this study, Au/0.07 graphene-doped PVA/n-Si structures were fabricated and current conduction mechanism in these structures were investigated in the temperature range of 80-380 K through forward bias current-voltage (I-V) measurements. Main electrical parameters were extracted from I-V data. Zero-bias barrier height (overline{Φ}_{B0} ) and ideality factor (n) were found strong functions of temperature and their values ranged from 0.234 eV and 4.98 (at 80 K) to 0.882 eV and 1.15 (at 380 K), respectively. Φ ap versus q/2kT plot was drawn to obtain an evidence of a Gaussian distribution of the barrier heights (BHs) and it revealed two distinct linear regions with different slopes and intercepts. The mean values of BH (Φ Bo) and zero-bias standard deviation (σ s ) were obtained from the intercept and slope of the linear regions of this plot as 1.30 eV and 0.16 V for the first region (280-380 K) and 0.74 eV and 0.085 V for the second region (80-240 K), respectively. Thus, the values of overline{Φ}_{B0} and effective Richardson constant (A*) were also found from the intercept and slope of the modified Richardson plot [ln(I s /T 2) - q 2 σ {/o 2} /2k 2 T 2 vs q/kT] as 1.31 eV and 130 A/cm2 K2 for the first region and 0.76 eV and 922 A/cm2 K2 for the second region, respectively. The value of A* for the first region was very close to the theoretical value for n-Si (112 A/cm2 K2). The energy density distribution profile of surface states (Nss) was also extracted from the forward bias I-V data by taking into account voltage dependent effective BH (Φe) and n.

  4. Barrier Infrared Detector (BIRD) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — JPL will design, fabricate, and fully characterize a 640x512 format HOT-BIRD FPA with increased quantum efficiency and extended spectral coverage. Unlike the small...

  5. Investigation of enzyme-sensitive lipid nanoparticles for delivery of siRNA to blood–brain barrier and glioma cells

    Directory of Open Access Journals (Sweden)

    Bruun J

    2015-09-01

    Full Text Available Jonas Bruun,1 Trine B Larsen,1 Rasmus I Jølck,1 Rasmus Eliasen,1 René Holm,2 Torben Gjetting,1 Thomas L Andresen11Department of Micro- and Nanotechnology, Center for Nanomedicine and Theranostics, Technical University of Denmark, DTU Nanotech, Lyngby, Denmark; 2H Lundbeck A/S, Biologics and Pharmaceutical Science, Valby, DenmarkAbstract: Clinical applications of siRNA for treating disorders in the central nervous system require development of systemic stable, safe, and effective delivery vehicles that are able to cross the impermeable blood–brain barrier (BBB. Engineering nanocarriers with low cellular interaction during systemic circulation, but with high uptake in targeted cells, is a great challenge and is further complicated by the BBB. As a first step in obtaining such a delivery system, this study aims at designing a lipid nanoparticle (LNP able to efficiently encapsulate siRNA by a combination of titratable cationic lipids. The targeted delivery is obtained through the design of a two-stage system where the first step is conjugation of angiopep to the surface of the LNP for targeting the low-density lipoprotein receptor-related protein-1 expressed on the BBB. Second, the positively charged LNPs are masked with a negatively charged PEGylated (poly(ethylene glycol cleavable lipopeptide, which contains a recognition sequence for matrix metalloproteinases (MMPs, a class of enzymes often expressed in the tumor microenvironment and inflammatory BBB conditions. Proteolytic cleavage induces PEG release, including the release of four glutamic acid residues, providing a charge switch that triggers a shift of the LNP charge from weakly negative to positive, thus favoring cellular endocytosis and release of siRNA for high silencing efficiency. This work describes the development of this two-stage nanocarrier-system and evaluates the performance in brain endothelial and glioblastoma cells with respect to uptake and gene silencing efficiency. The

  6. Thermochemistry of CaO-MgO-Al2O3-SiO2 (CMAS) and Advanced Thermal and Environmental Barrier Coating Systems

    Science.gov (United States)

    Costa, Gustavo C. C.; Zhu, Dongming

    2016-01-01

    CaO-MgO-Al2O3-SiO2 (CMAS) oxides are constituents in a broad number of materials and minerals which have recently inferred to discussions in materials science, planetary science, geochemistry and cosmochemistry communities. In materials science, there is increasing interest in the degradation studies of thermal (TBC) and environmental (EBC) barrier coatings of gas turbines by molten CMAS. These coatings have been explored to be applied on silicon-based ceramics and composites which are lighter and more temperature capable hot-section materials of gas turbines than the current Ni-based superalloys. The degradation of the coatings occurs when CMAS minerals carried by the intake air into gas turbines, e.g. in aircraft engines, reacts at high temperatures (1000C) with the coating materials. This causes premature failure of the static and rotating components of the turbine engines. We discuss some preliminary results of the reactions between CMAS and Rare-Earth (RE Y, Yb and Gd) oxide stabilized ZrO2 systems, and stability of the resulting oxides and silicates.

  7. Correlation between barrier inhomogeneities of 4H-SiC 1 A/600 V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS

    Science.gov (United States)

    Gelczuk, Ł.; Kamyczek, P.; Płaczek-Popko, E.; Dąbrowska-Szata, M.

    2014-09-01

    Electrical properties of commercial silicon carbide (SiC) Schottky rectifiers are investigated through the measurement and analysis of the forward current-voltage (I-V) and reverse capacitance-voltage (C-V) characteristics in a large temperature range. Some of devices show distinct discrepancies in specific ranges of their electrical characteristics, especially the excess current dominates at voltage <1 V and temperature <300 K. Standard deep level transient spectroscopy (DLTS) revealed the presence of a single deep-level defect with activation energy of about 0.3 eV, exhibiting the features characteristic for extended defects (e.g. dislocations), such as logarithmic capture kinetics. Furthermore, high-resolution Laplace DLTS showed that this deep level consists actually of three closely spaced levels with activation energies ranging from about 0.26 eV to 0.29 eV. A strong correlation between these two techniques implies that the revealed trap level is due to extended defects surrounded by point traps or clusters of defects. On the basis of obtained specific features of the deep-level defect, it was proposed that this defect is arguably responsible for the observed Schottky barrier inhomogeneities.

  8. UV-visible detector and LED based n-ZnO/p-Si heterojunction formed by electrodeposition

    Directory of Open Access Journals (Sweden)

    A. Baltakesmez

    2013-03-01

    Full Text Available In this study, we have investigated the heterojunctions formed by n-ZnO thin films deposited on (100 p-Si:B using electrochemical deposition (ECD technique. Structural, electrical and luminescence features of the thin films were respectively measured. Optimal sets of growth conditions seem to be the ones that are undergone for the samples D1 and D2. It was observed that n-ZnO thin films have dominantly preferred orientation of (002. It has been shown that the heterostructures exhibited reasonable rectifying behavior with turn-on voltage of about 1.2 V and ideality factor of 2.1. In case of illumination with 400 nm wavelength light, significant increase occurred especially in reverse bias current by a factor of 103 and 102 for the D1 and the D2, respectively. Bandgap of ZnO thin films has been determined to be 3.4 eV at the room temperature by using the band edge photoluminescence measurements. Finally, the room temperature electroluminescence (EL results show that the heterostructures exhibits observable broad luminescence centered at the wavelengths of 390 and 510 nm for D1 and 470 nm for D2, respectively. Additionally, sharp lasing peaks are also observed in the EL spectra, probably due to the multiple scattering effects.

  9. Measurements of Ultra-Fast single photon counting chip with energy window and 75 μm pixel pitch with Si and CdTe detectors

    Science.gov (United States)

    Maj, P.; Grybos, P.; Kasinski, K.; Koziol, A.; Krzyzanowska, A.; Kmon, P.; Szczygiel, R.; Zoladz, M.

    2017-03-01

    Single photon counting pixel detectors become increasingly popular in various 2-D X-ray imaging techniques and scientific experiments mainly in solid state physics, material science and medicine. This paper presents architecture and measurement results of the UFXC32k chip designed in a CMOS 130 nm process. The chip consists of about 50 million transistors and has an area of 9.64 mm × 20.15 mm. The core of the IC is a matrix of 128 × 256 pixels of 75 μm pitch. Each pixel contains a CSA, a shaper with tunable gain, two discriminators with correction circuits and two 14-bit ripple counters operating in a normal mode (with energy window), a long counter mode (one 28-bit counter) and a zero-dead time mode. Gain and noise performance were verified with X-ray radiation and with the chip connected to Si (320 μm thick) and CdTe (750 μ m thick) sensors.

  10. Study on Inter-Diffusion Barrier Layer between PZT Pyroelectric Thick Film and Si Substrate%PZT厚膜与Si衬底互扩散阻挡层研究

    Institute of Scientific and Technical Information of China (English)

    陈冲; 吴传贵; 彭强祥; 罗文博; 张万里; 王书安

    2013-01-01

    在Pt/Ti/SiO2/Si基片上,利用电泳沉积制备PZT热释电厚膜材料.为防止Pb和Si互扩散,在Pt底电极与SiO2/Si衬底间通过直流磁控溅射制备了TiOx薄膜阻挡层.对具有0、300 nm和500 nm TiOx阻挡层的PZT厚膜材料用SEM和能量色散谱仪(EDS)表征了Pb和Si互扩散情况,用动态热释电系数测量仪测试了热释电系数.结果表明,当TiOx阻挡层为500 nm时,可阻挡Pb和Si互扩散,热释电性能最好.热释电系数p=1.5×10-8 C·cm-2·K-1,相对介电常数εr=170,损耗角正切tanδ=0.02,探测度优值因子Fd=1.05×10-5pa-0.5.%PZT thick film as pyroelectric material has been prepared on the Pt/Ti/SiCK/Si substrate by using the electrophoresis deposition (EPD) method. In order to prevent the inter-diffusion between Pb and Si,a TiOx film barrier layer between Pt bottom electrode and SiO2/Si substrate has been prepared by using the DC magnetron sputtering method. The inter-diffusion between Pb and Si in PZT thick film material with TiO, barrier layer thickness of 0, 300 nm and 500 nm respectively have been characterized by SEM and EDS. The pyroelectric coefficient has been measured by the dynamic pyroelectric coefficient instrument. The results show that the inter-diffusion between Pb and Si can be blocked when the thickness of TiOx barrier layer is 500 nm and have the best pyroelectric properties. The pyroelectric coefficient, relative dielectric constant,dielectric loss and detectivity figure of merit are p=1. 5 × 10-8C · cm-2k-1 ,εr = 170,tan 8=0. 02 and Fd = 1. 05 × 10-5 Pa-0.5 respectively.

  11. Pocked surface neutron detector

    Energy Technology Data Exchange (ETDEWEB)

    McGregor, Douglas (Whitmore Lake, MI); Klann, Raymond (Bolingbrook, IL)

    2003-04-08

    The detection efficiency, or sensitivity, of a neutron detector material such as of Si, SiC, amorphous Si, GaAs, or diamond is substantially increased by forming one or more cavities, or holes, in its surface. A neutron reactive material such as of elemental, or any compound of, .sup.10 B, .sup.6 Li, .sup.6 LiF, U, or Gd is deposited on the surface of the detector material so as to be disposed within the cavities therein. The portions of the neutron reactive material extending into the detector material substantially increase the probability of an energetic neutron reaction product in the form of a charged particle being directed into and detected by the neutron detector material.

  12. SiD Letter of Intent

    CERN Document Server

    Aihara, H; Oreglia, M.; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; Grefe, C.; Klempt, W.; Linssen, L.; Schlatter, D.; Speckmayer, P.; Thom, J.; Yang, J.; Christian, D.C.; Cihangir, S.; Cooper, W.E.; Demarteau, M.; Fisk, H.E.; Garren, L.A.; Krempetz, K.; Kutschke, R.K.; Lipton, R.; Para, A.; Tschirhart, R.; Wenzel, H.; Yarema, R.; Grunewald, M.; Pankov, A.; U., Gomel State Tech.; Dutta, T.; Dauncey, P.D.; Balbuena, J.P.; Fleta, C.; Lozano, M.; Ullan, M.; Christian, G.B.; Faus-Golfe, A.; Fuster, J.; Lacasta, C.; Marinnas, C.; Vos, M.; Duarte, J.; Fernandez, M.; Gonzalez, J.; Jaramillo, R.; Lopez, Virto, A.; Martinez-Eivero, C.; Moya, D.; Ruiz-Mimeno, A.; Vila, I.; Colledani, C.; Dorokhov, A.; Hu-Guo, C.; Winter, M.; Moortgat-Pick, G.; Onoprienko, D.V.; Kim, G.N.; Park, H.; Adloff, C.; Blaha, J.; Blaising, J.-J.; Cap, S.; Chefdeville, M.; Drancourt, C.; Espargiliare, A.; Gaglione, R.; Geffroy, N.; Jacquemier, J.; Karyotakis, Y.; Prast, J.; Vouters, G.; Gronberg, J.; Walston, S.; Wright, D.; Sawyer, L.; Laloum, M.; Ciobanu, C.; Chauveau, J.; Savoy-Navarro, A.; Andricek, L.; Moser, H.-G.; Cowan, R.f.; Fisher, P.; Yamamoto, R.K.; Kenney, ClMl; Boos, E.E.; Merkin, M.; Chen, S.; Chakraborty, D.; Dyshkant, A.; Hedin, D.; Zutshi, V.; Galkin, V.; D'Ascenzo, N.; Ossetski, D.; Saveliev, V.; Kapusta, F.; De Masi, R.; Vrba, V.; Lu, C.; McDonald, K.T.; Smith, A.J.S.; Bortoletto, D.; Coath, R.; Crooks, J.; Damerell, C.; Gibson, M.; Nichols, A.; Stanitzki, M.; Strube, J.; Turchetta, R.; Tyndel, M.; Weber, M.; Worm, S.; Zhang, Z.; Barklow, T.L.; Belymam, A.; Breidenbach, M.; Cassell, R.; Craddock, W.; Deaconu, C.; Dragone, A.; Graf, N.A.; Haller, G.; Herbst, R.; Hewett, J.L.; Jaros, J.A.; Johnson, A.S.; Kim, P.C.; MacFarlane, D.B.; Markiewicz, T.; Maruyama, T.; McCormick, J.; Moffeit, K.; Neal, H.A.; Nelson, T.K.; Oriunno, M.; Partridge, R.; Peskin, M.E.; Rizzo, T.G.; Rowson, P.; Su, D.; Woods, M.; Chakrabarti, S.; Dieguez, A.; Garrido, Ll.; Kaminski, J.; Conway, J.S.; Chertok, M.; Gunion, J.; Holbrook, B.; Lander, R.L.; Tripathi, S.M.; Fadeyev, V.; Schumm, B.A.; Oreglia, M.; Gill, J.; Nauenberg, U.; Oleinik, G.; Wagner, S.R.; Ranjan, K.; Shivpuri, R.; Varner, G.S.; Orava, R.; Van Kooten, R.; Bilki, B.; Charles, M.; Kim, T.J.; Mallik, U.; Norbeck, E.; Onel, Y.; Brau, B.P.; Willocq, S.; Taylor, G.N.; Riles, Keith; Yang, H.-J.; Kriske, R.; Cremaldi, L.; Rahmat, R.; Lastovicka-Medin, G.; Seidel, S.; Hildreth, M.D.; Wayne, M.; Brau, J.E.; Frey, R.; Sinev, N.; Strom, D.M.; Torrence, E.; Banda, Y.; Burrows, P.N.; Devetak, E.; Foster, B.; Lastovicka, T.; Li, Y.-M.; Nomerotski, A.; Riera-Babures, J.; Vilasis-Cardona, X.; Manly, S.; Adeva, B.; Iglesias Escudero, C.; Vazquez Regueiro, P.; Saborido Silva, J.J.; Gallas Torreira, A.; Gao, D.; Jie, W.; Jungfeng, Y.; Li, C.; Liu, S.; Liu, Y.; Sun, Y.; Wang, Q.; Yi, J.; Yonggang, W.; Zhao, Z.; De, K.; Farbin, A.; Park, S.; Smith, J.; White, A.P.; Yu, J.; Lou, X.C.; Abe, T.; Aihara, H.; Iwasaki, M.; Lubatti, H.J.; Band, H.R.; Feyzi, F.; Prepost, R.; Karchin, P.E.; Milstene, C.; Baltay, C.; Dhawan, S.; Kwon, Y.-J.

    2009-01-01

    Letter of intent describing SiD (Silicon Detector) for consideration by the International Linear Collider IDAG panel. This detector concept is founded on the use of silicon detectors for vertexing, tracking, and electromagnetic calorimetry. The detector has been cost-optimized as a general-purpose detector for a 500 GeV electron-positron linear collider.

  13. The international linear collider. Technical design report. Vol. 4. Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Behnke, Ties; Brau, James E.; Burrows, Philip; Fuster, Juan; Peskin, Michael; Stanitzki, Marcel; Sugimoto, Yasuhiro; Yamada, Sakue; Yamamoto, Hitoshi (eds.)

    2013-10-01

    The following topics are dealt with: The Si Vertex detectors, the main tracker, calorimetry, muon detectors, the superconducting spectrometer magnet, the detector electronics and data acquisition, simulation and reconstruction, benchmarking, costs. (HSI)

  14. Time-of-flight ERD with a 200 mm{sup 2} Si{sub 3}N{sub 4} window gas ionization chamber energy detector

    Energy Technology Data Exchange (ETDEWEB)

    Julin, Jaakko, E-mail: jaakko.julin@jyu.fi; Laitinen, Mikko; Sajavaara, Timo

    2014-08-01

    Low energy heavy ion elastic recoil detection work has been carried out in Jyväskylä since 2009 using home made timing detectors, a silicon energy detector and a timestamping data acquisition setup forming a time-of-flight–energy telescope. In order to improve the mass resolution of the setup a new energy detector was designed to replace the silicon solid state detector, which suffered from radiation damage and had poor resolution for heavy recoils. In this paper the construction and operation of an isobutane filled gas ionization chamber with a 14 × 14 mm{sup 2} 100 nm thick silicon nitride window are described. In addition to greatly improved energy resolution for heavy ions, the detector is also able to detect hydrogen recoils simultaneously in the energy range of 100–1000 keV. Additionally the detector has position sensitivity by means of timing measurement, which can be performed without compromising the performance of the detector in any other way. The achieved position sensitivity improves the depth resolution near the surface.

  15. The distributed control system of LHC - CMS: study of the stability and dynamic range of the new SiPM detector for the HCAL

    OpenAIRE

    Gómez-Reino Garrido, Robert

    2014-01-01

    This dissertation concerns part of the work done by the author within the CMS collaboration. It consists of seven chapters that are conceptually divided into three Parts. In the first Part the CERN Large Hadron Collider where this work has been performed is firstly described. The overall CMS detector is then presented: the sub-detectors and main systems are described, providing also an overview of the collaboration organization, as well as the experimental infrastructure. Finishing Part ...

  16. Photoelectric properties of n-SiC/n-Si heterojunctions

    Directory of Open Access Journals (Sweden)

    Semenov A. V.

    2012-10-01

    Full Text Available Photovoltaic effect in isotype heterotructure formed by nanocrystalline silicon carbide films on single crystal n-Si substrates (n-SiC/n-Si heterojunction was studied. The films were produced by direct ionic deposition method. The model that takes into account the quantum wells and potential barriers caused by band offsets was proposed to explain the current-voltage characteristics and photovoltaic properties of the heterostructure n-SiC/n-Si.

  17. Neutron transmutation doped silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.; Krejner, Kh.; Ito, D.; Khusimi, K.; Okava, S.; Sirejsi, F.

    1984-01-01

    A method of doping neutron transmutation during (NTD) of Si crystals is described. Characteristics of detectors made of crystals obtained by the NTD method at low and room temperatures are measured. The possibility is studied of using the NTD method to produce Si crystals with a longer lifetime of non-base charge carriers, high specific resistance and more even distribution of specific resistance over the detector radius. The NTD method is based on /sup 30/Si isotope transmutation into /sup 31/Si following the (n, ..gamma..)-reaction. The /sup 31/Si isotope is unstable and transforms to /sup 31/P while emitting ..beta../sup -/. The NTD method consists in introduction of purified gaseous monosilan SiH/sub 4/ into the furnace to undergo thermal decomposition at 860 deg C with the formation of polycrystalline n-type Si. The polycrystalline Si prepared is treated mechanically and, after purification by the method of a ''floating zone'' in vacuum and in argon irradiated by a thermal neutron flux with the a density of 5x10/sup 11/ neUtr/(cm/sup 2/ x s) for 30-75 min. An analysis of the data obtained shows that the specifications of the Si detectors prepared by the NTD method are the same as those of conventional Si-detectors widely used nowadays but their cost of production is considerably lower.

  18. Heavy ion recoil spectrometry of Si{sub x}Ge{sub 1-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Walker, S.R.; Johnston, P.N.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Cohen, D.D.; Dytlewski, N. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Hult, M.; Whitlow, H.J. [Lund Institute of Technology, Solvegatan (Sweden). Department of Nuclear Physics; Zaring, C.; Oestling, M. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics

    1993-12-31

    Mass and energy dispersive recoil spectrometry employing 77 MeV {sup 127}I ions from ANTARES (FN Tandem) facility at Lucas Heights has been used to examine the isotopic composition of samples of Si{sub x}Ge{sub 1-x} grown at the Australian National University by Electron Beam Evaporation (EBE). The recoiling target nuclei were analysed by a Time Of Flight and Energy (TOF-E) detector telescope composed of two timing pickoff detectors and a surface barrier (energy) detector. From the time of flight and energy, the ion mass can be determined and individual depth distributions for each element can be obtained. Recoil spectrometry has shown the presence of oxygen in the Si{sub x}Ge{sub 1-x} layer and has enabled the separate determination of energy spectra for individual elements. 9 refs., 3 figs.

  19. Silicon Detector Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H.; Burrows, P.; Oreglia, M.

    2010-05-26

    This document presents the current status of SiD's effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R&D needed to provide the technical basis for an optimised SiD.

  20. Characterization of imaging pixel detectors of Si and CdTe read out with the counting X-ray chip MPEC 2.3; Charakterisierung von bildgebenden Pixeldetektoren aus Si und CdTe ausgelesen mit dem zaehlenden Roentgenchip MPEC 2.3

    Energy Technology Data Exchange (ETDEWEB)

    Loecker, M.

    2007-04-15

    Single photon counting detectors with Si- and CdTe-sensors have been constructed and characterized. As readout chip the MPEC 2.3 is used which consists of 32 x 32 pixels with 200 x 200 {mu}m{sup 2} pixel size and which has a high count rate cabability (1 MHz per pixel) as well as a low noise performance (55 e{sup -}). Measurements and simulations of the detector homogeneity are presented. It could be shown that the theoretical maximum of the homogeneity is reached (quantum limit). By means of the double threshold of the MPEC chip the image contrast can be enhanced which is demonstrated by measurement and simulation. Also, multi-chip-modules consisting of 4 MPEC chips and a single Si- or CdTe-sensor have been constructed and successfully operated. With these modules modulation-transfer-function measurements have been done showing a good spatial resolution of the detectors. In addition, multi-chip-modules according to the Sparse-CMOS concept have been built and tests characterizing the interconnection technologies have been performed.

  1. Tailoring Lipid and Polymeric Nanoparticles as siRNA Carriers towards the Blood-Brain Barrier – from Targeting to Safe Administration

    DEFF Research Database (Denmark)

    Gomes, Maria João; Fernandes, Carlos; Martins, Susana

    2017-01-01

    Blood-brain barrier is a tightly packed layer of endothelial cells surrounding the brain that acts as the main obstacle for drugs enter the central nervous system (CNS), due to its unique features, as tight junctions and drug efflux systems. Therefore, since the incidence of CNS disorders is incr...

  2. A PET detector module with monolithic crystal, single end readout, SiPM array and high depth-of-interaction resolution

    Science.gov (United States)

    Zhang, H.; Zhou, R.; Yang, C.

    2016-08-01

    Depth of interaction (DOI) technology can improve the spatial resolution of nuclear medicine imaging system which uses scintillation detectors such as Positron Emission Tomography (PET). In this paper, a prototype detector module with DOI capability is established to make complementary characteristic tests on an existing method and to improve the experimental performance using the same method. We investigate the gamma incident surface and incident angle effects on the positioning method with our model in simulations and evaluate its 3-D positioning results in experiment. It shows that the positioning results are highly affected by the gamma incident surface and incident angle. The 137Cs energy resolution is 12.1% and the DOI resolution is estimated at 2.26 mm in average by our detector in experiment.

  3. Performances of the Si microstrip detector of the STAR experiment at RHIC; Performances du detecteur en silicium a micropistes de l'experience STAR a RHIC

    Energy Technology Data Exchange (ETDEWEB)

    Bouchet, J

    2007-10-15

    The Silicon Strip Detector (SSD) is the fourth layer of detector using a double-sided microstrip technology of the STAR experiment at RHIC, completing STAR's inner tracking device. The goal of STAR is to study heavy ions collisions in order to probe the existence of the quark gluon plasma (QGP), a deconfined state of nuclear matter. Strangeness enhancement, such as {kappa}{sub S}{sup 0}, {lambda}, {xi} and {omega}, for particles production, has been proposed to sign the formation of QGP. Then precise measurement of secondary vertices is needed. The SSD will also permit an attempt to use the inner tracking device to measure charm and beauty with direct topological identification. It was proposed to enhance the STAR tracking capabilities by providing a better connection between reconstructed tracks in the main tracking device (TPC) and the initial vertex detector (SVT). In this thesis, we will present the intrinsic performances of the SSD and its impact on the inner tracking system performances by studying Cu-Cu collisions occurred at RHIC in 2005. We show that the SSD detector has excellent performances in terms of resolution: (945 {+-} 18) {mu}m in azimuth and (1021 {+-} 13) {mu}m along the beam axis. For the final result when SSD is associated to the SVT the resolutions are (281 {+-} 1) {mu}m and (213 {+-} 0.8) {mu}m in azimuth and along the beam axis respectively. The resolution reached by the addition of the Silicon Vertex detectors of STAR will allow the search for rare particles like charm and beauty, which have a decay-length of the order of hundred microns.

  4. Cryogenic Tracking Detectors

    CERN Multimedia

    Luukka, P R; Tuominen, E M; Mikuz, M

    2002-01-01

    The recent advances in Si and diamond detector technology give hope of a simple solution to the radiation hardness problem for vertex trackers at the LHC. In particular, we have recently demonstrated that operating a heavily irradiated Si detector at liquid nitrogen (LN$_2$) temperature results in significant recovery of Charge Collection Efficiency (CCE). Among other potential benefits of operation at cryogenic temperatures are the use of large low-resistivity wafers, simple processing, higher and faster electrical signal because of higher mobility and drift velocity of carriers, and lower noise of the readout circuit. A substantial reduction in sensor cost could result The first goal of the approved extension of the RD39 program is to demonstrate that irradiation at low temperature in situ during operation does not affect the results obtained so far by cooling detectors which were irradiated at room temperature. In particular we shall concentrate on processes and materials that could significantly reduce th...

  5. PtSi红外探测器截止波长延长研究%Study on Extension of Cut-off Wavelength of PtSi Infrared Detectors

    Institute of Scientific and Technical Information of China (English)

    刘爽; 杨家德; 刘飒; 宁永功; 陈艾

    2001-01-01

    The basic theory of the extension of cut-off wavelength of PtSi infrared detectors is discussed.Three methods are introduced including Tl+ and Ir+ doping, MBE growth of P+layer and B+, In+ low-energy ion-implantation.%讨论了将PtSi红外探测器截止波长延长的理论基础,并介绍了采用在衬底掺入Tl+和Ir+,MBE生长P+层以及低能离子注入B+,In+来延长PtSi红外探测器截止波长的三种方法。

  6. CAR siRNA 对睾丸支持细胞上皮屏障通透性的影响及机制%Effects of coxsackie-adenovirus′receptor siRNA on the permeability of Sertoli cell epithelial barrier and its related mechanism

    Institute of Scientific and Technical Information of China (English)

    李兴旺; 赵艳玲

    2014-01-01

    目的:观察柯萨奇病毒-腺病毒受体(CAR)siRNA对睾丸支持细胞上皮屏障通透性的影响,并探讨其机制。方法采用睾丸支持细胞原代双室培养方法制备睾丸支持细胞上皮屏障,细胞培养3 d后分为CAR siRNA组、对照组,分别转染CAR siRNA、无同源性非靶向双链RNA。转染后第2天,分别采用RT-PCR和Western blotting法检测睾丸支持细胞中CAR mRNA、蛋白表达;采用Millicell-ERS电阻系统测量双室模型内外室的电位差;采用免疫荧光细胞化学染色法检测支持细胞的Occludin蛋白,荧光显微镜下观察Occludin分布情况;采用Western blotting法检测支持细胞中总Occludin蛋白量、与早期内涵体抗原1(EEA1)抗体结合的Occludin蛋白。结果 CAR siRNA组与对照组CAR mRNA相对表达量分别为0.122±0.013、0.429±0.039,CAR 蛋白相对表达量分别为0.142±0.041、0.532±0.022,两组比较,P均<0.05。 CAR siRNA组与对照组TER分别为(37±2.5)、(50±3.0)ohm· cm2,两组比较,P<0.05。 CAR siRNA组与对照组Occludin蛋白相对表达量分别为0.164±0.025、0.143±0.031,两组比较,P>0.05。对照组Occludin呈蜂巢样沿细胞膜线状分布;CAR siRNA组Occludin分布较紊乱,细胞膜处减少,线性分布破坏,细胞质内增多。 CAR siRNA组、对照组细胞中与EEA1结合的Occludin蛋白量分别为1.332±0.018、1.000±0.015,两组比较,P<0.05。结论 CAR siRNA能增加睾丸支持细胞上皮屏障通透性,其机制可能与其诱导Occludin蛋白内吞增强而分布改变有关。%Objective To investigate the effect of coxsackie-adenovirus receptor(CAR) siRNA on the permeability of Sertoli cell epithelial barrier and its related mechanism.Methods By using two-compartment primary culture system, Sertoli cell epithelial barrier was established.After 3 days of culture, the cells were divided into control and

  7. Germanium Blocked Impurity Band (BIB) detectors

    Science.gov (United States)

    Haller, E. E.; Baumann, H.; Beeman, J. W.; Hansen, W. L.; Luke, P. N.; Lutz, M.; Rossington, C. S.; Wu, I. C.

    1989-01-01

    Information is given in viewgraph form. The advantages of the Si blocked impurity band (BIB) detector invented by M. D. Petroff and M. G. Stabelbroek are noted: smaller detection volume leading to a reduction of cosmic ray interference, extended wavelength response because of dopant wavefunction overlap, and photoconductive gain of unity. It is argued that the stated advantages of Si BIB detectors should be realizable for Ge BIB detectors. Information is given on detector development, subtrate choice and preparation, wafer polising, epitaxy, characterization of epi layers, and preliminary Ge BIB detector test results.

  8. Optimization of the performance of a CsI(Tl) scintillator + Si pin photodiode detector for medium energy light charged particle hybride array

    CERN Document Server

    Kalinka, G; Gál, J; Hegyesi, G; Molnár, J; Elekes, Z; Motobayashi, T; Yanagisawa, Y; Saito, A

    2003-01-01

    NaI(TI), BGO and CsI(TI) crystals in compact arrays will be used at RIKEN RI Beam Factory in the near future to detect gamma-rays from fast moving nuclei produced in nuclear reactions with radioactive beams, and among them CsI(TI) for light charged particle identification as well. The latter system will consist of 312 Cs(TI) crystals coupled to silicon photodiodes in a hemispherical arrangement, four detectors packed together with their own preamplifiers in each of the 78 parallelepipedic thin walled aluminum containers. (R.P.)

  9. Can non-viral technologies knockdown the barriers to siRNA delivery and achieve the next generation of cancer therapeutics?

    Science.gov (United States)

    Guo, Jianfeng; Bourre, Ludovic; Soden, Declan M; O'Sullivan, Gerald C; O'Driscoll, Caitriona

    2011-01-01

    Cancer is one of the most wide-spread diseases of modern times, with an estimated increase in the number of patients diagnosed worldwide, from 11.3 million in 2007 to 15.5 million in 2030 (www.who.int). In many cases, due to the delay in diagnosis and high increase of relapse, survival rates are low. Current therapies, including surgery, radiation and chemotherapy, have made significant progress, but they have many limitations and are far from ideal. Although immunotherapy has recently offered great promise as a new approach in cancer treatment, it is still very much in its infancy and more information on this approach is required before it can be widely applied. For these reasons effective, safe and patient-acceptable cancer therapy is still largely an unmet clinical need. Recent knowledge of the genetic basis of the disease opens up the potential for cancer gene therapeutics based on siRNA. However, the future of such gene-based therapeutics is dependent on achieving successful delivery. Extensive research is ongoing regarding the design and assessment of non-viral delivery technologies for siRNA to treat a wide range of cancers. Preliminary results on the first human Phase I trial for solid tumours, using a targeted non-viral vector, illustrate the enormous therapeutic benefits once the issue of delivery is resolved. In this review the genes regulating cancer will be discussed and potential therapeutic targets will be identified. The physiological and biochemical changes caused by tumours, and the potential to exploit this knowledge to produce bio-responsive 'smart' delivery systems, will be evaluated. This review will also provide a critical and comprehensive overview of the different non-viral formulation strategies under investigation for siRNA delivery, with particular emphasis on those designed to exploit the physiological environment of the disease site. In addition, a section of the review will be dedicated to pre-clinical animal models used to evaluate

  10. The performance for the TeV photon measurement of the LHCf upgraded detector using Gd2SiO5 (GSO) scintillators

    Science.gov (United States)

    Makino, Y.; Adriani, O.; Berti, E.; Bonechi, L.; Bongi, M.; Castellini, G.; D'Alessandro, R.; Haguenauer, M.; Itow, Y.; Iwata, T.; Kasahara, K.; Masuda, K.; Matsubayashi, E.; Menjo, H.; Muraki, Y.; Papini, P.; Ricciarini, S.; Sako, T.; Suzuki, T.; Tamura, T.; Tiberio, A.; Torii, S.; Tricomi, A.; Turner, W. C.; Ueno, M.; Zhou, Q. D.

    2017-02-01

    The Large Hadron Collider forward (LHCf) experiment measures the forward particle production at the LHC to verify hadronic interaction models used in air shower experiments. We have upgraded very small sampling and imaging calorimeters using GSO scintillators to measure the most energetic particles generated in √{ s }=13 TeV p-p collisions at the zero-degree region of the LHC. Upgraded detectors were calibrated at the SPS North area facility in CERN and it was confirmed that the detector can measure electro-magnetic showers with energy resolution of 3% and position resolution of better than 123 μm for 100 GeV electrons. The operation of LHCf in 13 TeV p-p collisions has been successfully completed with integrated luminosity of 5 nb-1. Reconstructed π0 peak with the mass resolution of 3.7% and stability less than 1% during the operation implies that our measurement was stable enough in the high irradiation condition.

  11. Processing Parameter Effects and Thermal Properties of Y2Si2O7 Nanostructured Environmental Barrier Coatings Synthesized by Solution Precursor Induction Plasma Spraying

    Science.gov (United States)

    Darthout, Émilien; Laduye, Guillaume; Gitzhofer, François

    2016-10-01

    The solution precursor plasma spray process, in which a solution of metal salts is axially injected into an induction thermal plasma, is suitable for deposition of nanostructured environmental barrier coatings. The effects of main processing parameters, namely the solution precursor concentration, spraying distance, reactor pressure, and atomization gas flow rate, have been analyzed using D-optimal design of experiments regarding the deposition rate and coating porosity responses. Among these four parameters, the solution precursor concentration had the greatest influent on the coating structure, followed by the spraying distance and reactor pressure, and finally the atomization gas flow rate with a small contribution. It is pointed out that the species that impact on the substrate are agglomerates of nanoparticles. The equivalent thermal conductivity of selected coatings was computed from experimental temperature evolution curves obtained by laser flash thermal diffusivity analysis, using two methods: a multilayer finite-element model with optimization, and a multilayer thermal diffusion model. The results of the two models agree, with coatings exhibiting low thermal conductivity between 0.7 and 1 W/(m K) at 800 °C.

  12. Processing Parameter Effects and Thermal Properties of Y2Si2O7 Nanostructured Environmental Barrier Coatings Synthesized by Solution Precursor Induction Plasma Spraying

    Science.gov (United States)

    Darthout, Émilien; Laduye, Guillaume; Gitzhofer, François

    2016-09-01

    The solution precursor plasma spray process, in which a solution of metal salts is axially injected into an induction thermal plasma, is suitable for deposition of nanostructured environmental barrier coatings. The effects of main processing parameters, namely the solution precursor concentration, spraying distance, reactor pressure, and atomization gas flow rate, have been analyzed using D-optimal design of experiments regarding the deposition rate and coating porosity responses. Among these four parameters, the solution precursor concentration had the greatest influent on the coating structure, followed by the spraying distance and reactor pressure, and finally the atomization gas flow rate with a small contribution. It is pointed out that the species that impact on the substrate are agglomerates of nanoparticles. The equivalent thermal conductivity of selected coatings was computed from experimental temperature evolution curves obtained by laser flash thermal diffusivity analysis, using two methods: a multilayer finite-element model with optimization, and a multilayer thermal diffusion model. The results of the two models agree, with coatings exhibiting low thermal conductivity between 0.7 and 1 W/(m K) at 800 °C.

  13. Conceptual design studies for a CEPC detector

    Science.gov (United States)

    Chekanov, S. V.; Demarteau, M.

    2016-11-01

    The physics potential of the Circular Electron Positron Collider (CEPC) can be significantly strengthened by two detectors with complementary designs. A promising detector approach based on the Silicon Detector (SiD) designed for the International Linear Collider (ILC) is presented. Several simplifications of this detector for the lower energies expected at the CEPC are proposed. A number of cost optimizations of this detector are illustrated using full detector simulations. We show that the proposed changes will enable one to reach the physics goals at the CEPC.

  14. Gamma ray detector modules

    Science.gov (United States)

    Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

    2009-01-01

    A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

  15. Detectors - Electronics; Detecteurs - Electronique

    Energy Technology Data Exchange (ETDEWEB)

    Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J. [Lab. de Physique Corpusculaire, Caen Univ., 14 (France)

    1998-04-01

    The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X {yields} e{sup -} converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the {sup 3}He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

  16. Large lateral photovoltaic effect in µc-SiOx:H/a-Si:H/c-Si p-i-n structure

    Science.gov (United States)

    Qiao, Shuang; Chen, Jianhui; Liu, Jihong; Zhang, Xinhui; Wang, Shufang; Fu, Guangsheng

    2016-03-01

    In this paper, we report on a large lateral photovoltaic effect (LPE) in a hydrogenated microcrystal silicon-oxygen (µc-SiOx:H)-based p-i-n structure. Compared with LPE in a hydrogenated amorphous silicon (a-Si:H)-based p-i-n structure, this structure showed an abnormal current-voltage (I-V) curve with a lower photoelectric conversion efficiency, but exhibited a much higher LPE with the highest position sensitivity of 64.3 mV/mm. We ascribe this to the enhancement of the lateral gradient of excess transmitted carriers induced by increasing both Schottky barrier and p-type layer body conductivity. Our results suggest that this µc-SiOx:H-based p-i-n structure may be a promising candidate for position-sensitive detectors (PSDs). Moreover, our results may also imply that solar cell devices with abnormal I-V curves (or low efficiency) could find their new applications in other aspects.

  17. Studies of double-sided silicon microstrip detectors

    Science.gov (United States)

    Seidel, S. C.; Bruner, N. L.; Frautschi, M. A.; Hoeferkamp, M. R.; Patton, A.

    1996-02-01

    The electrical characteristics of detectors manufactured by SINTEF/SI with a variety of geometrical and processing options have been investigated. The detectors' leakage current, depletion voltage, bias resistance, interstrip, coupling capacitance, and coupling capacitor breakdown voltage were studied.

  18. SiD Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  19. Infrared detectors

    CERN Document Server

    Rogalski, Antonio

    2010-01-01

    This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

  20. Si/SiGe MMIC's

    Science.gov (United States)

    Luy, Johann-Friedrich; Strohm, Karl M.; Sasse, Hans-Eckard; Schueppen, Andreas; Buechler, Josef; Wollitzer, Michael; Gruhle, Andreas; Schaeffler, Friedrich; Guettich, Ulrich; Klaassen, Andreas

    1995-04-01

    Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper gives a survey on the state-of-the-art performance of this technology and on first applications. The key devices are IMPATT diodes for mm-wave power generation and detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mixer circuits. The silicon/silicon germanium heterobipolar transistor (SiGe HBT) with f(sub max) values of more than 90 GHz is now used for low-noise oscillators at Ka-band frequencies. First system applications are discussed.

  1. Infrared-transparent microstrip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, M. [Instituto de Fisica de Cantabria (IFCA), Ed. Juan Jorda, E-39005 Santander (Spain)], E-mail: Marcos.Fernandez@cern.ch; Duarte, J.; Gonzalez, J.; Heinemeyer, S.; Jaramillo, R.; Lopez, A.; Martinez, C.; Ruiz, A.; Vila, I. [Instituto de Fisica de Cantabria (IFCA), Ed. Juan Jorda, E-39005 Santander (Spain); Cabruja, E.; Lozano, M.; Pellegrini, G. [Centro Nacional de Microelectronica CNM-IMB, Campus Universidad Autonoma Barcelona, 08193 Bellaterra, Barcelona (Spain)

    2009-01-01

    The two main limiting factors in the accuracy of an optomechanical position monitoring system based on laser sources and photosensors are mechanical transfer between the monitored imaging sensors to the active particle tracking elements and non-straight propagation of the reference laser lines. Laser based alignment systems of Si trackers that use their own tracking detectors as photosensors are not affected by the first factor. Improving the transmittance of Si to infrared beams certainly minimizes the second one. Simulation of the passage of a light beam through a real microstrip detector and analysis of first measurements of samples are presented in this paper.

  2. Use of semiconductor detector c-Si microstrip type in obtaining the digital radiographic imaging of phantoms and biological samples of mammary glands; Empleo de detector semiconductor de c-Si del tipo microbandas en la obtencion de imagenes radiograficas digitales de maniquies y muestras biologicas de mamas

    Energy Technology Data Exchange (ETDEWEB)

    Leyva, A.; Cabal, A.; Pinera, I.; Abreu, Y.; Cruz, C. M. [Centro de Estudios Avanzados y Desarrollo Nuclear, C. Habana, Cuba (Cuba); Montano, L. M.; Diaz, C. C.; Fontaine, M. [IPN, Centro de Investigaciones y Estudios Avanzados, Mexico D. F. (Mexico); Ortiz, C. M. [ISSSTE, Hospital General Tacuba, Clinica de Mama y Gineco-oncologia, Mexico D. F. (Mexico); Padilla, F. [Instituto Superior de Tecnologias y Ciencias Aplicadas, C. Habana, Cuba (Cuba); De la Mora, R. [Centro de Control Estatal de Equipos Medicos, C. Habana, Cuba (Cuba)], e-mail: aleyva@ceaden.edu.cu

    2009-07-01

    The present work synthesizes the experimental results obtained in the characterization of 64 micro strips crystalline silicon detector designed for experiments in high energies physics, with the objective of studying its possible application in advanced medical radiography, specifically in digital mammography and angiography. The research includes the acquisition of two-dimensional radiography of a mammography phantom using the scanning method, and its comparison with similar images simulated mathematically for different X rays sources. The paper also shows the experimental radiography of two biological samples taken from biopsies of mammas, where it is possible to identify the presence of possible pathological lesions. The results reached in this work point positively toward the effective possibility of satisfactorily introducing those advanced detectors in medical digital imaging applications. (Author)

  3. Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiNx/nc-Si/a-SiNx Structures

    Institute of Scientific and Technical Information of China (English)

    WANG Xiang; HUANG Jian; ZHANG Xian-Gao; DING Hong-Lin; YU Lin-Wei; HUANG Xin-Fan; LI Wei; XU Jun; CHEN Kun-Ji

    2008-01-01

    @@ The a-SiNx/nanocrystalline silicon (nc-Si)/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on p-type Si substrates. The nc-Si layer in thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layers are 3nm and 20nm,respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures.Distinct frequency-dependent capacitance peaks due to electrons tunnelling into the nc-Si dots and capacitance-voltage (C- V) hysteresis characteristic due to electrons storage in the nc-Si dots are observed with the same sample.

  4. CLIC Detector and Physics Status

    CERN Document Server

    Van Der Kolk, Naomi

    2017-01-01

    This contribution to LCWS2016 presents recent developments within the CLICdp collaboration. An updated scenario for the staged operation of CLIC has been published; the accelerator will operate at 380 GeV, 1.5 TeV and 3 TeV. The lowest energy stage is optimised for precision Higgs and top physics, while the higher energy stages offer extended Higgs and BSM physics sensitivity. The detector models CLIC_SiD and CLIC_ILD have been replaced by a single optimised detector; CLICdet. Performance studies and R&D in technologies to meet the requirements for this detector design are ongoing.

  5. Barrier traversal times using a phenomenological track formation model

    CERN Document Server

    Palao, J P; Brouard, S; Jadczyk, A

    1997-01-01

    A phenomenological model for a measurement of barrier traversal times for particles is proposed. Two idealized detectors for passage and arrival provide entrance and exit times for the barrier traversal. The averaged traversal time is computed over the ensemble of particles detected twice, before and after the barrier. The Hartman effect can still be found when passage detectors that conserve the momentum distribution of the incident packet are used.

  6. Pixel Detectors

    OpenAIRE

    Wermes, Norbert

    2005-01-01

    Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid pixel technology which can be considered the state of the art in this field of instrumentation. A development period of almost 10 years has resulted in pixel detector modules which can stand the extreme rate and timing requirements as well as the very harsh...

  7. Quantum wells based on Si/SiO{sub x} stacks for nanostructured absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Berghoff, B.; Suckow, S.; Roelver, R.; Spangenberg, B.; Kurz, H. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Sologubenko, A.; Mayer, J. [Central Facility for Electron Microscopy, RWTH Aachen University, Ahornstr. 55, 52074 Aachen (Germany); Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich, 52426 Juelich (Germany)

    2010-11-15

    We report on electrical transport and quantum confinement in thermally annealed Si/SiO{sub x} multiple quantum well (QW) stacks. Results are correlated with the morphology of the stacks. High temperature annealing of Si/SiO{sub x} stacks leads to precipitation of excess Si from the SiO{sub x} layers, which enhances the degree of crystallization and increases the grain sizes in the Si QWs compared to the conventional Si/SiO{sub 2} system. Moreover, the excess Si forms highly conductive pathways between adjacent Si QWs that are separated by ultrathin silicon oxide barriers. This results in an increase of conductivity by up to 10 orders of magnitude compared to the tunneling dominated transport in Si/SiO{sub 2} stacks. The stacks exhibit a distinct quantum confinement as confirmed by photoluminescence measurements. (author)

  8. Photon-Assisted Transmission through a Double-Barrier Structure

    Energy Technology Data Exchange (ETDEWEB)

    LYO,SUNGKWUN K.

    2000-06-27

    The authors study multi-photon-assisted transmission of electrons through single-step, single-barrier and double-barrier potential-energy structures as a function of the photon energy and the temperature. Sharp resonances in the spectra of the tunneling current through double-barrier structures are relevant to infra-red detectors.

  9. SiC-Si interfacial thermal and mechanical properties of reaction bonded SiC/Si ceramic composites

    Science.gov (United States)

    Hsu, Chun-Yen; Deng, Fei; Karandikar, Prashant; Ni, Chaoying

    Reaction bonded SiC/Si (RBSC) ceramic composites are broadly utilized in military, semiconductor and aerospace industries. RBSC affords advanced specific stiffness, hardness and thermal. Interface is a key region that has to be considered when working with any composites. Both thermal and mechanical behaviors of the RBSC are highly dependent on the SiC-Si interface. The SiC-Si interface had been found to act as a thermal barrier in restricting heat transferring at room temperature and to govern the energy absorption ability of the RBSC. However, up to present, the role of the SiC-Si interface to transport heat at higher temperatures and the interfacial properties in the nanoscale have not been established. This study focuses on these critically important subjects to explore scientific phenomena and underlying mechanisms. The RBSC thermal conductivity with volume percentages of SiC at 80 and 90 vol% was measured up to 1,200 °C, and was found to decrease for both samples with increasing environmental temperature. The RBSC with 90 vol% SiC has a higher thermal conductivity than that of the 80 vol%; however, is still significantly lower than that of the SiC. The interfacial thermal barrier effect was found to decrease at higher temperatures close 1200 °C. A custom-made in-situ tensile testing device which can be accommodated inside a ZEISS Auriga 60 FIB/SEM has been setup successfully. The SiC-Si interfacial bonding strength was measured at 98 MPa. The observation and analysis of crack propagation along the SiC-Si interface was achieved with in-situ TEM.

  10. Stacked Metal Silicide/Silicon Far-Infrared Detectors

    Science.gov (United States)

    Maserjian, Joseph

    1988-01-01

    Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

  11. Healing particles in self-healing thermal barrier coatings

    NARCIS (Netherlands)

    Derelioglu, Z.; Anusuya Ponnusami, S.; Turteltaub, S.; Van der Zwaag, S.; Sloof, W.G.

    2013-01-01

    Crack healing in ceramic thermal barrier coatings (TBCs) may be realized by embedding Mo-Si based particles in the thermal barrier coating. Upon cracking, these particles are exposed to oxygen that permeates through the top layer and the crack gap is filled with SiO2 which is produced from oxidation

  12. Optical Detectors

    Science.gov (United States)

    Tabbert, Bernd; Goushcha, Alexander

    Optical detectors are applied in all fields of human activities from basic research to commercial applications in communication, automotive, medical imaging, homeland security, and other fields. The processes of light interaction with matter described in other chapters of this handbook form the basis for understanding the optical detectors physics and device properties.

  13. Metal Detectors.

    Science.gov (United States)

    Harrington-Lueker, Donna

    1992-01-01

    Schools that count on metal detectors to stem the flow of weapons into the schools create a false sense of security. Recommendations include investing in personnel rather than hardware, cultivating the confidence of law-abiding students, and enforcing discipline. Metal detectors can be quite effective at afterschool events. (MLF)

  14. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  15. Design and Fabrication of Silicon Carbide Semiconductor Detectors

    Institute of Scientific and Technical Information of China (English)

    MENG; Xin; LIU; Yang; HE; Gao-kui

    2015-01-01

    The potential of silicon carbide(SiC)for use in semiconductor nuclear radiation detectors has been recognized for years.SiC detectors have now been demonstrated for high-resolution alpha particle and X-ray energy spectrometry,beta ray,gamma-ray,thermal-and fast-neutron

  16. Spectral response of multi-element silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ludewigt, B.A.; Rossington, C.S.; Chapman, K. [Univ. of California, Berkeley, CA (United States)

    1997-04-01

    Multi-element silicon strip detectors, in conjunction with integrated circuit pulse-processing electronics, offer an attractive alternative to conventional lithium-drifted silicon Si(Li) and high purity germanium detectors (HPGe) for high count rate, low noise synchrotron x-ray fluorescence applications. One of the major differences between the segmented Si detectors and the commercially available single-element Si(Li) or HPGe detectors is that hundreds of elements can be fabricated on a single Si substrate using standard silicon processing technologies. The segmentation of the detector substrate into many small elements results in very low noise performance at or near, room temperature, and the count rate of the detector is increased many-fold due to the multiplication in the total number of detectors. Traditionally, a single channel of detector with electronics can handle {approximately}100 kHz count rates while maintaining good energy resolution; the segmented detectors can operate at greater than MHz count rates merely due to the multiplication in the number of channels. One of the most critical aspects in the development of the segmented detectors is characterizing the charge sharing and charge loss that occur between the individual detector strips, and determining how these affect the spectral response of the detectors.

  17. Scintillating fiber detector

    CERN Document Server

    Vozak, Matous

    2016-01-01

    NA61 is one of the physics experiments at CERN dedicated to study hadron states coming from interactions of SPS beams with various targets. To determine the position of a secondary beam, three proportional chambers are placed along the beamline. However, these chambers tend to have slow response. In order to obtain more precise time information, use of another detector is being considered. Fast response and compact size is making scintillation fiber (SciFi) with silicon photomultiplier (Si-PM) read out a good candidate. This report is focused on analysing data from SciFi collected in a test beam at the beginning of July 2016.

  18. Differential cross sections measurement of 28Si(p,p/γ)28Si and 29Si(p,p/γ)29Si reactions for PIGE applications

    Science.gov (United States)

    Jokar, A.; Kakuee, O.; Lamehi-Rachti, M.

    2016-03-01

    Differential cross sections for gamma-ray emission from the 28Si(p,p/γ)28Si (Eγ = 1779 keV) and the 29Si(p,p/γ)29Si (Eγ = 1273 keV) nuclear reactions were measured in the energy range of 2.0-3.2 MeV and 2.0-3.0 MeV, respectively. The thin Si targets were prepared by evaporating natural SiO onto self-supporting Ag films. The gamma-rays and backscattered protons were detected simultaneously. An HPGe detector placed at an angle of 90° with respect to beam direction was employed to collect gamma-rays while an ion implanted Si detector placed at a scattering angle of 165° was used to detect backscattered protons. The great advantage of this work is that differential cross sections were obtained with a procedure irrespective of absolute value of the collected beam charge.

  19. Ultrafast graphene-based broadband THz detector

    CERN Document Server

    Mittendorff, Martin; Kamann, Josef; Eroms, Jonathan; Weiss, Dieter; Schneider, Harald; Helm, Manfred

    2013-01-01

    We present an ultrafast graphene-based detector, working in the THz range at room temperature. A logarithmic-periodic antenna is coupled to a graphene flake that is produced by exfoliation on SiO2. The detector was characterized with the free-electron laser FELBE for wavelengths from 8 um to 220 um. The detector rise time is 50 ps in the wavelength range from 30 um to 220 um. Autocorrelation measurements exploiting the nonlinear photocurrent response at high intensities reveal an intrinsic response time below 10 ps. This detector has a high potential for characterizing temporal overlaps, e. g. in two-color pump-probe experiments.

  20. SEM analysis of ion implanted SiC

    Energy Technology Data Exchange (ETDEWEB)

    Malherbe, Johan B., E-mail: johan.malherbe@up.ac.za [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Berg, N.G. van der; Botha, A.J.; Friedland, E.; Hlatshwayo, T.T.; Kuhudzai, R.J. [Department of Physics, University of Pretoria, Pretoria 0002 (South Africa); Wendler, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität, 07743 Jena (Germany); Chakraborty, P. [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Silveira, E.F. da [Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro (Brazil)

    2013-11-15

    SiC is a material used in two future energy production technologies, firstly as a photovoltaic layer to harness the UV spectrum in high efficient power solar cells, and secondly as a diffusion barrier material for radioactive fission products in the fuel elements of the next generation of nuclear power plants. For both applications, there is an interest in the implantation of reactive and non-reactive ions into SiC and their effects on the properties of the SiC. In this study 360 keV Ag{sup +}, I{sup +} and Xe{sup +} ions were separately implanted into 6H–SiC and in polycrystalline SiC at various substrate temperatures. The implanted samples were also annealed in vacuum at temperatures ranging from 900 °C to 1600 °C for various times. In recent years, there had been significant advances in scanning electron microscopy (SEM) with the introduction of an in-lens detector combined with field emission electron guns. This allows defects in solids, such as radiation damage created by the implanted ions, to be detected with SEM. Cross-sectional SEM images of 6H–SiC wafers implanted with 360 keV Ag{sup +} ions at room temperature and at 600 °C and then vacuum annealed at different temperatures revealed the implanted layers and their thicknesses. A similar result is shown of 360 keV I{sup +} ions implanted at 600 °C into 6H–SiC and annealed at 1600 °C. The 6H–SiC is not amorphized but remained crystalline when implanting at 600 °C. There are differences in the microstructure of 6H–SiC implanted with silver at the two temperatures as well as with reactive iodine ions. Voids (bubbles) are created in the implanted layers into which the precipitation of silver and iodine can occur after annealing of the samples. The crystallinity of the substrate via implantation temperature caused differences in the distribution and size of the voids. Implantation of xenon ions in polycrystalline SiC at 350 °C does not amorphize the substrate as is the case with room

  1. Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown on semi-insulating GaAs substrates

    Institute of Scientific and Technical Information of China (English)

    Chang Hu-Dong; Sun Bing; Xue Bai-Qing; Liu Gui-Ming; Zhao Wei; Wang Sheng-Kai; Liu Hong-Gang

    2013-01-01

    In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with and without an Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time.Compared with the In0.4Ga0.6As MOSFETs without an In0.49Ga0.51P barrier layer,In0.4Ga0.6As MOSFETs with an In0.49Ga0.51P barrier layer show higher drive current,higher transconductance,lower gate leakage current,lower subthreshold swing,and higher effective channel mobility.These In0.4Ga0.6As MOSFETs (gate length 2 μm) with an In0.49Ga0.s1P barrier layer exhibit a high drive current of 117 mA/mm,a high transconductance of 71.9 mS/mm,and a maximum effective channel mobility of 1266 cm2/(V·s).

  2. Pixel detectors

    CERN Document Server

    Passmore, M S

    2001-01-01

    positions on the detector. The loss of secondary electrons follows the profile of the detector and increases with higher energy ions. studies of the spatial resolution predict a value of 5.3 lp/mm. The image noise in photon counting systems is investigated theoretically and experimentally and is shown to be given by Poisson statistics. The rate capability of the LAD1 was measured to be 250 kHz per pixel. Theoretical and experimental studies of the difference in contrast for ideal charge integrating and photon counting imaging systems were carried out. It is shown that the contrast differs and that for the conventional definition (contrast = (background - signal)/background) the photon counting device will, in some cases, always give a better contrast than the integrating system. Simulations in MEDICI are combined with analytical calculations to investigate charge collection efficiencies (CCE) in semiconductor detectors. Different pixel sizes and biasing conditions are considered. The results show charge shari...

  3. Calorimeter detectors

    CERN Document Server

    de Barbaro, P; The ATLAS collaboration

    2013-01-01

    Although the instantaneous and integrated luminosity in HL-LHC will be far higher than the LHC detectors were originally designed for, the Barrel calorimeters of the four experiments are expected to continue to perform well  throughout the Phase II program. The conditions for the End-Cap calorimeters are far more challenging and whilst some detectors will require relatively modest changes, others require far more substantial upgrades. We present the results of longevity and performance studies for the calorimeter systems of the four main LHC experiments and outline the upgrade options under consideration. We include a discussion of the R&D required to make the final technology choices for the upgraded detectors.

  4. Liposome-siRNA-peptide complexes cross the blood-brain barrier and significantly decrease PrP on neuronal cells and PrP in infected cell cultures.

    Directory of Open Access Journals (Sweden)

    Bruce Pulford

    Full Text Available BACKGROUND: Recent advances toward an effective therapy for prion diseases employ RNA interference to suppress PrP(C expression and subsequent prion neuropathology, exploiting the phenomenon that disease severity and progression correlate with host PrP(C expression levels. However, delivery of lentivirus encoding PrP shRNA has demonstrated only modest efficacy in vivo. METHODOLOGY/PRINCIPAL FINDINGS: Here we describe a new siRNA delivery system incorporating a small peptide that binds siRNA and acetylcholine receptors (AchRs, acting as a molecular messenger for delivery to neurons, and cationic liposomes that protect siRNA-peptide complexes from serum degradation. CONCLUSIONS/SIGNIFICANCE: Liposome-siRNA-peptide complexes (LSPCs delivered PrP siRNA specifically to AchR-expressing cells, suppressed PrP(C expression and eliminated PrP(RES formation in vitro. LSPCs injected intravenously into mice resisted serum degradation and delivered PrP siRNA throughout the brain to AchR and PrP(C-expressing neurons. These data promote LSPCs as effective vehicles for delivery of PrP and other siRNAs specifically to neurons to treat prion and other neuropathological diseases.

  5. XMASS detector

    Energy Technology Data Exchange (ETDEWEB)

    Abe, K. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); Hieda, K. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Hiraide, K. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); Hirano, S. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kishimoto, Y.; Kobayashi, K.; Moriyama, S. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); Nakagawa, K. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Nakahata, M. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); Nishiie, H. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Ogawa, H. [Kamioka Observatory, Institute for Cosmic Ray Research, The University of Tokyo, Higashi-Mozumi, Kamioka, Hida, Gifu 506-1205 (Japan); Kavli Institute for the Physics and Mathematics of the Universe, the University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); and others

    2013-07-11

    The XMASS project aims to detect dark matter, pp and {sup 7}Be solar neutrinos, and neutrinoless double beta decay using ultra pure liquid xenon. The first phase of the XMASS experiment searches for dark matter. In this paper, we describe the XMASS detector in detail, including its configuration, data acquisition equipment and calibration system.

  6. XMASS detector

    CERN Document Server

    Abe, K; Hiraide, K; Hirano, S; Kishimoto, Y; Kobayashi, K; Moriyama, S; Nakagawa, K; Nakahata, M; Nishiie, H; Ogawa, H; Oka, N; Sekiya, H; Shinozaki, A; Suzuki, Y; Takeda, A; Takachio, O; Ueshima, K; Umemoto, D; Yamashita, M; Yang, B S; Tasaka, S; Liu, J; Martens, K; Hosokawa, K; Miuchi, K; Murata, A; Onishi, Y; Otsuka, Y; Takeuchi, Y; Kim, Y H; Lee, K B; Lee, M K; Lee, J S; Fukuda, Y; Itow, Y; Nishitani, Y; Masuda, K; Takiya, H; Uchida, H; Kim, N Y; Kim, Y D; Kusaba, F; Motoki, D; Nishijima, K; Fujii, K; Murayama, I; Nakamura, S

    2013-01-01

    The XMASS project aims to detect dark matter, pp and $^{7}$Be solar neutrinos, and neutrinoless double beta decay using ultra pure liquid xenon. The first phase of the XMASS experiment searches for dark matter. In this paper, we describe the XMASS detector in detail, including its configuration, data acquisition equipment and calibration system.

  7. Two-color infrared detector

    Science.gov (United States)

    Klem, John F; Kim, Jin K

    2014-05-13

    A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins the first absorber layer at a first interface. The barrier layer exhibits a second valence band energy characterized by a second valence band energy function. The barrier layer also adjoins a second absorber layer at a second interface. The second absorber layer exhibits a third valence band energy characterized by a third valence band energy function. The first and second valence band energy functions are substantially functionally or physically continuous at the first interface and the second and third valence band energy functions are substantially functionally or physically continuous at the second interface.

  8. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.

    2007-07-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  9. Review of amorphous silicon based particle detectors: the quest for single particle detection

    Science.gov (United States)

    Wyrsch, N.; Ballif, C.

    2016-10-01

    Hydrogenated amorphous silicon (a-Si:H) is attractive for radiation detectors because of its radiation resistance and processability over large areas with mature Si microfabrication techniques. While the use of a-Si:H for medical imaging has been very successful, the development of detectors for particle tracking and minimum-ionizing-particle detection has lagged, with almost no practical implementation. This paper reviews the development of various types of a-Si:H-based detectors and discusses their respective achievements and limitations. It also presents more recent developments of detectors that could potentially achieve single particle detection and be integrated in a monolithic fashion into a variety of applications.

  10. The Mu3e Tile Detector

    Energy Technology Data Exchange (ETDEWEB)

    Eckert, Hans Patrick

    2015-05-06

    The Mu3e experiment is designed to search for the lepton flavour violating decay μ→e{sup +}e{sup +}e{sup -} with a sensitivity of one in 10{sup 16} decays. An observation of such a decay would be a clear sign of physics beyond the Standard Model. Achieving the targeted sensitivity requires a high precision detector with excellent momentum, vertex and time resolution. The Mu3e Tile Detector is a highly granular sub-detector system based on scintillator tiles with Silicon Photomultiplier (SiPM) readout, and aims at measuring the timing of the muon decay products with a resolution of better than 100 ps. This thesis describes the development of the Tile Detector concept and demonstrates the feasibility of the elaborated design. In this context, a comprehensive simulation framework has been developed, in order to study and optimise the detector performance. The central component of this framework is a detailed simulation of the SiPM response. The simulation model has been validated in several measurements and shows good agreement with the data. Furthermore, a 16-channel prototype of a Tile Detector module has been constructed and operated in an electron beam. In the beam tests, a time resolution up to 56 ps has been achieved, which surpasses the design goal. The simulation and measurement results demonstrate the feasibility of the developed Tile Detector design and show that the required detector performance can be achieved.

  11. First results from the Lund NMP particle detector system

    Energy Technology Data Exchange (ETDEWEB)

    Golubev, P. [Division of Nuclear Physics, Department of Physics, Lund University, Box 118, SE-22100 Lund (Sweden); Kristiansson, P. [Division of Nuclear Physics, Department of Physics, Lund University, Box 118, SE-22100 Lund (Sweden)], E-mail: Per.Kristiansson@nuclear.lu.se; Arteaga-Marrero, N.; Elfman, M.; Malmqvist, K.; Nilsson, E.J.C.; Nilsson, C.; Pallon, J.; Wegden, M. [Division of Nuclear Physics, Department of Physics, Lund University, Box 118, SE-22100 Lund (Sweden)

    2009-06-15

    The design and first results from a Double Sided Silicon Strip Detector (DSSSD) recently installed at the Lund Nuclear Microprobe facility (NMP) are presented. The detector has 64 sector strips and 32 ring strips, which in combination give more than 2000 detector cells, each with characteristics comparable with a standard surface barrier detector (SBD). The detector has been tested both with radioactive sources and with different ion beams and energies. The most striking features are the high rate virtually pile-up free operation and also the possibility of detailed measurement of angular distributions.

  12. Visible Blind SiC Array with Low Noise Readout Project

    Data.gov (United States)

    National Aeronautics and Space Administration — To date, we have (i) designed and fabricated both common cathode and common anode SiC detector arrays; (ii) designed and fabricated the detector packaging (FPA), and...

  13. The 'LiC Detector Toy' program

    Science.gov (United States)

    Regler, M.; Mitaroff, W.; Valentan, M.; Frühwirth, R.; Höfler, R.

    2008-07-01

    LiC is a simple but powerful and flexible software tool, written in MatLab, for basic detector design studies (geometries, material budgets) by determining the resolution of reconstructed track parameters. It is based on a helix track model including multiple scattering, and consists of a simplified simulation of the detector followed by track reconstruction using the Kalman filter. After a short description of LiC's main characteristics, we demonstrate its capabilities by applying this tool in a performance study of the LDC and SiD detector concepts at the International Linear Collider (ILC).

  14. Elastic scattering measurements for the system 7Be +28Si at 17.2 MeV

    Science.gov (United States)

    Sgouros, O.; Pakou, A.; Pierroutsakou, D.; Mazzocco, M.; Acosta, L.; Aslanoglou, X.; Boiano, A.; Boiano, C.; Grebosz, J.; Keeley, N.; La Commara, M.; Marquinez-Duran, G.; Martel, I.; Parascandolo, C.; Rusek, K.; Sánchez-Benítez, A. M.; Signorini, C.; Soukeras, V.; Stiliaris, E.; Strano, E.; Strojek, I.; Torresi, D.

    2015-02-01

    Elastic scattering of 7Be +28Si was studied at several near barrier energies for probing the energy dependence of the optical potential. Our analysis at 17.2 MeV will be presented in this article and discussed, in terms of Continuum Coupled Channel Calculations (CDCC). This research is part of a long term plan concerning the energy dependence of the optical potential for weakly bound projectiles, at near barrier energies and for probing the potential threshold anomaly. The experiment took place at the EXOTIC facility - Laboratori Nationali di Legnaro (LNL), and refers to an angular distribution measurement, using the detector array EXPADES (Exotic Particle Detection System). Results at 9 MeV (Rutherford region) were also analyzed and were used for estimating the solid angle. Our analysis for other energies is under process.

  15. Elastic scattering measurements for the system {sup 7}Be+{sup 28}Si at 17.2 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Sgouros, O.; Pakou, A.; Aslanoglou, X.; Soukeras, V. [Department of Physics and HINP, The University of Ioannina, 45110 Ioannina (Greece); Pierroutsakou, D.; Boiano, A. [INFN Sezione di Napoli, via Cinthia, I-80126, Napoli (Italy); Mazzocco, M.; Parascandolo, C.; Signorini, C.; Strano, E.; Torresi, D. [Departimento di Fisica and INFN - Sezione di Padova, via Marzolo 8, I-35131, Padova (Italy); Acosta, L.; Marquinez-Duran, G.; Martel, I. [Departamento di Fisica Aplicada, Universidad de Huelva, E-21071, Huelva (Spain); Boiano, C. [INFN Sezione di Milano, via Celoria 16, I-20133 Milano (Italy); Grebosz, J. [IFJ-PAN, Krakow (Poland); Keeley, N.; Strojek, I. [National Center for Nuclear Research, A. Soltana 7, 05-400, Otwock Warsaw (Poland); La Commara, M. [INFN Sezione di Napoli, via Cinthia, I-80126, Napoli, Italy and Dipartimento di Scienze Fisiche, Universita di Napoli, via Cinthia, I-80126, Napoli (Italy); Rusek, K. [Heavy Ion Laboratory, University of Warsaw, Pasteura 5a, 02-093, Warsaw (Poland); and others

    2015-02-24

    Elastic scattering of {sup 7}Be+{sup 28}Si was studied at several near barrier energies for probing the energy dependence of the optical potential. Our analysis at 17.2 MeV will be presented in this article and discussed, in terms of Continuum Coupled Channel Calculations (CDCC). This research is part of a long term plan concerning the energy dependence of the optical potential for weakly bound projectiles, at near barrier energies and for probing the potential threshold anomaly. The experiment took place at the EXOTIC facility - Laboratori Nationali di Legnaro (LNL), and refers to an angular distribution measurement, using the detector array EXPADES (Exotic Particle Detection System). Results at 9 MeV (Rutherford region) were also analyzed and were used for estimating the solid angle. Our analysis for other energies is under process.

  16. Effect of W addition on the electroless deposited NiP(W) barrier layer

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Yishi [State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Material Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai (China); Hu, Anmin, E-mail: huanmin@sjtu.edu.cn [State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Material Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai (China); Hang, Tao [State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Material Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai (China); Peng, Li [Shanghai Entry-Exit Inspection and Quarantine Bureau (China); Li, Ming [State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Material Science and Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai (China)

    2013-10-01

    Electroless deposition of NiP, NiWP thin film on p-type Si as the barrier layer to prevent the diffusion of Cu into Si was investigated. The thermal stability of the Si/Ni(W)P/Cu layers were evaluated by measuring the changes of resistance of the samples after annealed at various temperatures. XRD was applied to detect the formation of Cu{sub 3}Si and evaluate the barrier performance of the layers. The results of XRD of the stacked Si/NiP/Cu, Si/NiWP-1/Cu, Si/NiWP–2/Cu films reveal that Cu atom could diffuse through NiP barrier layer at 450 °C, Cu could hardly diffuse through NiWP layer at 550 °C. This means that with W added in the layer, the barrier performance is improved. Although the resistance of Si/NiWP-1 and Si/NiWP-2 are higher than that of Si/NiP, the resistance of stacked layers of Si/NiWP-1/Cu and Si/NiWP–2/Cu are close to that of Si/NiP/Cu. This means that using NiWP as barrier layer is acceptable.

  17. Characterization of Si detectors, search for vertex and potentiality of detecting a light charged Higgs boson in the CMS experiment; Caracterisation des detecteurs silicium, recherche de Vertex et etude du potentiel de decouverte d'un boson de Higgs charge leger dans l'experience CMS

    Energy Technology Data Exchange (ETDEWEB)

    Estre, N

    2004-07-01

    The CMS (compact muon solenoid) detector that will be set on the future LHC (large hadron collider) accelerator will enable us to continue our search for the Higgs boson as well as to look for any hint for a new physics beyond the standard model. CMS is composed of an efficient muon detector, an electromagnetic calorimeter and of a tracker with high spatial resolution, this tracker is the topic of this thesis. The tracker will allow an accurate reconstruction of charged-particles trajectories and the reconstruction of the primary interaction vertex. The tracker's technology is based on micro-strip Si detectors, tests performed with the SPS particle beam show that these detectors have an impact reconstruction efficiency greater than 98% and a piling-up rate limited to 6%. The spatial resolution concerning particle trajectories is about 45 {mu}m for an interval of 183 {mu}m between 2 strips. The simulation for the search for a light charged Higgs boson show that an excess of {tau}{nu}{sub {tau}} + bb-bar + qq-bar' events is possible to be observed for any value of tan({beta}) up to M{sub A} = 122 GeV/c{sup 2} during the first year of operation and up to 136 GeV/c{sup 2} afterwards. With the assumption that this event excess is due to the decay of charged Higgs bosons we can state that the assessment of its mass will be possible till m{sub H} = 150 GeV/c{sup 2} with an accuracy of 15 GeV/c{sup 2}. (A.C.)

  18. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    Energy Technology Data Exchange (ETDEWEB)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  19. 26Si Excited States via One-Neutron Removal from 27Si Using Radioactive Beam

    Science.gov (United States)

    Chen, J.; Chen, A. A.; Amthor, A. M.; Bazin, D.; Becerril, A. D.; Gade, A.; Galaviz, D.; Glasmacher, T.; Kahl, D.; Lorusso, G.; Matos, M.; Ouellet, C. V.; Pereira, J.; Schatz, H.; Smith, K. M.; Wales, B.; Weisshaar, D.; Zegers, R. G. T.

    2013-03-01

    A measurement of the p(27Si, d)26Si reaction has been performed to study levels of 26Si, with connections to the stellar 25Al(p, γ)26Si reaction rate. A beam of adioactive 27Si of energy 84.3 MeV/A was impinged on a polypropylene foil (CH2) of 180 mg/cm2 in thickness. De-excitation γ-rays were detected with a highly-segmented germanium detector array, in coincidence with the 26Si recoils. Our results are an independent measurement of states used in the energy calibration of other experiments on 26Si structure. They also suggest that the spin-parity of the Ex(26Si) = 6454 keV (Er = 940 keV) state should be 4+ instead of the previously adopted assignment of 0+.

  20. Waveguide-Coupled Superconducting Nanowire Single-Photon Detectors

    Science.gov (United States)

    Beyer, Andrew D.; Briggs, Ryan M.; Marsili, Francesco; Cohen, Justin D.; Meenehan, Sean M.; Painter, Oskar J.; Shaw, Matthew D.

    2015-01-01

    We have demonstrated WSi-based superconducting nanowire single-photon detectors coupled to SiNx waveguides with integrated ring resonators. This photonics platform enables the implementation of robust and efficient photon-counting detectors with fine spectral resolution near 1550 nm.

  1. The vertex detector for the Lepton/Photon collaboration

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, J.P.; Boissevain, J.G.; Fox, D.; Hecke, H. van; Jacak, B.V.; Kapustinsky, J.S.; Leitch, M.J.; McGaughey, P.L.; Moss, J.M.; Sondheim, W.E. [Los Alamos National Lab., NM (United States)

    1991-12-31

    The conceptual design of the vertex detector for the Lepton/Photon Collaboration at RHIC is described, including simulations of its expected performance. The design consists of two con- centric layers of single-sided Si strips. The expected performance as a multiplicity detector and in measuring the pseudo-rapidity ({nu}) distribution is discussed as well as the expected vertex finding efficiency and accuracy. Various options which could be used to reduce the cost of the detector are also discussed.

  2. Barrier/Cu contact resistivity

    Energy Technology Data Exchange (ETDEWEB)

    Reid, J.S.; Nicolet, M.A. [California Inst. of Tech., Pasadena, CA (United States); Angyal, M.S.; Lilienfeld, D.; Shacham-Diamand, Y. [Cornell Univ., Ithaca, NY (United States); Smith, P.M. [Sandia National Labs., Albuquerque, NM (United States)

    1995-10-17

    The specific contact resistivity of Cu with ({alpha} + {beta})-Ta, TiN, {alpha}-W, and amorphous-Ta{sub 36}Si{sub 14}N{sub 50} barrier films is measured using a novel four-point-probe approach. Geometrically, the test structures consist of colinear sets of W-plugs to act as current and voltage probes that contact the bottom of a planar Cu/barrier/Cu stack. Underlying Al interconnects link the plugs to the current source and voltmeter. The center-to-center distance of the probes ranges from 3 to 200 {micro}m. Using a relation developed by Vu et al., a contact resistivity of roughly 7 {times} 10{sup {minus}9} {Omega} cm{sup 2} is obtained for all tested barrier/Cu combinations. By reflective-mode small-angle X-ray scattering, the similarity in contact resistivity among the barrier films may be related to interfacial impurities absorbed from the deposition process.

  3. Diffusion mechanisms in the Fe3Si alloys

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    In this paper, the possible reasons for the high thermal vacancy concentration and the low migration barriers for the Fe atom diffusion in the stoichiometric D03 structure Fe3Si have been discussed. The high thermal vacancy concentration was attributed to the compression of Fe-Fe atomic pairs and the tension of Fe-Si atomic pairs in Fe75Si25. The deformations (compression or tension) of the atompairs increase the interatomic potentials and thus decrease the enthalpies of vacancy formation. The low migration barriers for the Fe atom diffusion in Fe75Si25 were related to the symmetric property of the triangular barriers. Additionally, it was considered that the Si atoms in Fe3Si could probably migrate via nearest-neighbour jumps without disturbing the long-range order of atomic arrangements, provided that during the diffusion process the residence time on the antistructure sites is very short.

  4. CLIC Detector Power Requirements

    CERN Document Server

    Gaddi, A

    2013-01-01

    An estimate for the CLIC detector power requirements is outlined starting from the available data on power consumptions of the four LHC experiments and considering the differences between a typical LHC Detector (CMS) and the CLIC baseline detector concept. In particular the impact of the power pulsing scheme for the CLIC Detector electronics on the overall detector consumption is considered. The document will be updated with the requirements of the sub-detector electronics once they are more defined.

  5. Pixel Vertex Detectors

    OpenAIRE

    Wermes, Norbert

    2006-01-01

    Pixel vertex detectors are THE instrument of choice for the tracking of charged particles close to the interaction point at the LHC. Hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the present state of the art in detector technology. Three of the LHC detectors use vertex detectors based on this technology. A development period of almost 10 years has resulted in pixel detector modules which can stand the extreme rate and timing requirements as well as ...

  6. MUON DETECTOR

    CERN Multimedia

    F. Gasparini

    DT As announced in the previous Bulletin MU DT completed the installation of the vertical chambers of barrel wheels 0, +1 and +2. 242 DT and RPC stations are now installed in the negative barrel wheels. The missing 8 (4 in YB-1 and 4 in YB-2) chambers can be installed only after the lowering of the two wheels into the UX cavern, which is planned for the last quarter of the year. Cabling on the surface of the negative wheels was finished in May after some difficulties with RPC cables. The next step was to begin the final commissioning of the wheels with the final trigger and readout electronics. Priority was giv¬en to YB0 in order to check everything before the chambers were covered by cables and services of the inner detectors. Commissioning is not easy since it requires both activity on the central and positive wheels underground, as well as on the negative wheels still on the surface. The DT community is requested to commission the negative wheels on surface to cope with a possible lack of time a...

  7. MoSi2 oxidation resistance coatings for Mo5Si3/MoSi2 composites

    Institute of Scientific and Technical Information of China (English)

    YAN Jianhui; XU Hongmei; ZHANG Houan; TANG Siwen

    2009-01-01

    In order to improve the oxidation resistance properties of 30 at.% Mo5Si3/MoSi2 composite at high temperature in air, a molybdenum disili-tide coating was prepared on its surface by a molten salt technology. XRD and SEM analysis showed that only tetragonal MoSi2 phase ex-isted in the coating after being siliconized for 5 h at 900℃. The oxidation film formed on the uncoated sample was not dense, so that oxygen diffused easily through it. The volatilization of MoO3 resulted in the oxidation film separating from the substrate. The MoSi2coating was proved to be an effective method to prevent 30 at.% MosSi3/MoSi2 composites from being oxidized at 1200℃. A dense glassy SiO2 film was formed on the MoSi2 coating surface, which acted as a barrier layer for the diffusion of oxygen atoms to the substrate. The 30at.% Mo5Si3/MoSi2 composites with a MoSi2 coating showed much better oxidation resistance at high temperature.

  8. 偶联剂含量对纳米SiO2/EP复合涂料防护性能的影响%Effects of Silane Coupling Agent Content on the Barrier Property of SiO2/EP Coating

    Institute of Scientific and Technical Information of China (English)

    朱华军; 张秀芝; 张昕; 孔换明; 刘培培

    2012-01-01

    为提高涂料的屏蔽性能,本研究采用乙烯基三(β-甲氧基乙氧基)硅烷偶联剂对纳米SiO2表面进行改性,并用显微镜分析了SiO2在母液中的分散,应用自由膜静态浸泡法研究了水在涂层中的传输行为.结果表明:母液中乙烯基三(β-甲氧基乙氧基)硅烷偶联剂含量为3.5%以上时,纳米SiO2在母液中可以有效分散;当母液中偶联剂的含量为3.5%~4%时,水在涂层中的传输速率最低,涂层的屏蔽性能最佳,其防护性能最好.%In order to increase shielding performance of the coating, vinyl tri(β - methoxyethoxy) silane coupling was used for the surface modification of nanometer SiO2, and the microscope was used to analyze the SiO2 scattered in the mother liquor and the static immersion method was used to study the transporting behavior of water in coatings. The results showed that if vinyl tri(β - methoxyethoxy) silane coupling agent content was above 3. 5% in the mother liquid, nano SiO2 could be dispersed effectively. When the content of the coupling agent was 3. 5% ~4% , the transmission rate of water was the lowest in the coating and the shielding performance of the coating was the best with its best protective performance.

  9. Development of Large Cryogenic Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Mandic, Vuk [Univ. of Minnesota, Minneapolis, MN (United States)

    2016-12-09

    This project aims at developing large cryogenic semiconductor detectors for applications in particle physics and more broadly. We have developed a 150 mm diameter, 43 mm thick, Si-based detector that measures ionization released in an interaction of a particle inside the silicon crystal of high purity, operated at 30 mK temperature. We demonstrated that such a detector can be used to measure recoil energies on the keV scale, and that its stable operation can be maintained indefinitely. Detectors of this type could therefore be used in the fields of direct dark matter searches, coherent neutrino scattering measurements, X-ray observations, as well as in broader applications such as homeland security.

  10. {open_quotes}Pre-residue{close_quotes} light charged particles from {sup 28}Si+{sup 165}Ho and {sup 16}O+{sup 197}Au, {sup 208}Pb fusion

    Energy Technology Data Exchange (ETDEWEB)

    Fineman, B.J.; Brinkmann, K.T.; Caraley, A.L.; Gan, N.; McGrath, R.L.; Velkovska, J.

    1993-10-01

    Proton and alpha particle spectral shapes and multiplicities have been measured in coincidence with evaporation residues from {sup 28}Si+{sup 165}Ho and {sup 16}O + {sup 197}Au, {sup 208}Pb fusion reactions. Our experiments used 145 to 220 MeV {sup 28}Si and 115 and 140 MeV {sup 16}O beams produced with the Stony Brook LINAC. ER`s were separated using an electrostatic deflector and detected with large area surface barrier detectors. Light charged particles were detected at forward and backward angles with fourteen single NaI detectors. In the context of the statistical model, charged particle spectra yield information about emission barriers and compound nucleus equilibrium level densities. These are significant ingredients in calculations determining fission timescales from other observables such as pre-scission neutron multiplicities or fusion-evaporation excitation functions. Results will also be compared to analyses of pre-scission charged particles from similar systems which required barrier reductions to describe measured spectra.

  11. Smart parking barrier

    KAUST Repository

    Alharbi, Abdulrazaq M.

    2016-05-06

    Various methods and systems are provided for smart parking barriers. In one example, among others, a smart parking barrier system includes a movable parking barrier located at one end of a parking space, a barrier drive configured to control positioning of the movable parking barrier, and a parking controller configured to initiate movement of the parking barrier, via the barrier drive. The movable parking barrier can be positioned between a first position that restricts access to the parking space and a second position that allows access to the parking space. The parking controller can initiate movement of the movable parking barrier in response to a positive identification of an individual allowed to use the parking space. The parking controller can identify the individual through, e.g., a RFID tag, a mobile device (e.g., a remote control, smartphone, tablet, etc.), an access card, biometric information, or other appropriate identifier.

  12. Stopping power measurements for {sup 16}O, {sup 19}F and {sup 28}Si ions in Mylar by a transmission technique

    Energy Technology Data Exchange (ETDEWEB)

    Chekirine, M., E-mail: chekirine_mamoun@yahoo.fr [Departement de physique, Faculte des sciences, Universite Saad Dahleb, B.P. 270, route de Soumaa, Blida (Algeria); Ammi, H., E-mail: hakim_ammi@yahoo.fr [Centre de Recherche Nucleaire d' Alger, 2, Bd. Frantz Fanon, B.P. 399, Alger-Gare (Algeria); Choudhury, R.K.; Biswas, D.C. [Bhabha Atomic Research Centre, Nuclear Physics Division, Mumbai (India); Tobbeche, S., E-mail: said_tobbeche@yahoo.com [Faculte des sciences, Universite El-Hadj Lakhdar, Batna 05000 (Algeria)

    2011-12-15

    Electronic energy loss of charged particles in materials is a fundamental process responsible for the unique response of materials in applications of advanced nuclear power, radiation detectors and advanced processing of electronic devices. In this study, stopping powers of {sup 16}O, {sup 19}F and {sup 28}Si heavy ions crossing thin Mylar foils have been determined in transmission geometry. The energy loss was measured over a continuous range of energies from 1.6 to 5.5 MeV/n (MeV per nucleon) using the data that was tagged by a surface barrier detector (SBD) with and without stopping foils. We have compared the obtained stopping values to those predicted by SRIM-2008 computer code, ICRU-73 stopping data tables and MSTAR calculations. The effective charge values of these heavy ions have been also deduced from the experimental set of data.

  13. State of the art timing in TOF-PET detectors with LuAG, GAGG and L(Y)SO scintillators of various sizes coupled to FBK-SiPMs

    Science.gov (United States)

    Gundacker, S.; Acerbi, F.; Auffray, E.; Ferri, A.; Gola, A.; Nemallapudi, M. V.; Paternoster, G.; Piemonte, C.; Lecoq, P.

    2016-08-01

    Time of flight (TOF) in positron emission tomography (PET) has experienced a revival of interest after its first introduction in the eighties. This is due to a significant progress in solid state photodetectors (SiPMs) and newly developed scintillators (LSO and its derivatives). Latest developments at Fondazione Bruno Kessler (FBK) lead to the NUV-HD SiPM with a very high photon detection efficiency of around 55%. Despite the large area of 4×4 mm2 it achieves a good single photon time resolution (SPTR) of 180±5ps FWHM. Coincidence time resolution (CTR) measurements using LSO:Ce codoped with Ca scintillators yield best values of 73±2ps FWHM for 2×2×3 mm3 and 117±3ps for 2×2×20 mm3 crystal sizes. Increasing the crystal cross-section from 2×2 mm2 to 3×3 mm2 a non negligible CTR deterioration of approximately 7ps FWHM is observed. Measurements with LSO:Ce codoped Ca and LYSO:Ce scintillators with various cross-sections (1×1 mm2 - 4×4 mm2) and lengths (3mm - 30mm) will be a basis for discussing on how the crystal geometry affects timing in TOF-PET. Special attention is given to SiPM parameters, e.g. SPTR and optical crosstalk, and their measured dependency on the crystal cross-section. Additionally, CTR measurements with LuAG:Ce, LuAG:Pr and GGAG:Ce samples are presented and the results are interpreted in terms of their scintillation properties, e.g. rise time, decay time, light yield and emission spectra.

  14. Substantial reduction of the dielectric losses of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} thin films using a SiO{sub 2} barrier layer

    Energy Technology Data Exchange (ETDEWEB)

    Reymond, V; Michau, D; Payan, S; Maglione, M [Institute of Condensed Matter Chemistry of Bordeaux, University of Bordeaux 1, ICMCB-CNRS, 87 Avenue Dr A Schweitzer, 33608 Pessac (France)

    2004-12-22

    The efficient use of ferroelectric thin films in radio-frequency agile devices faces several limitations. One of them is imposed by the dielectric losses which are usually above 1%, i.e. above the threshold as set by the electronic industry. Following the same route as for bulk ceramics, we have processed composite stacks made of BST/SiO{sub 2} multilayers using radio-frequency magnetron sputtering. Doing so, we were able to repeatedly achieve dielectric losses well below 0.5% while keeping a high dielectric susceptibility and a suitable tunability. All of these improvements have been observed at low frequencies (f<10 MHz) and the transfer to the targeted frequency range (f>1 GHz) is currently in progress.

  15. The first large format SI:SB BIB arrays

    Science.gov (United States)

    Van Cleve, J. E.; Herter, T.; Pirger, B.; Gull, G.; Huffman, J.; Seib, D.; Halleck, B. L.; Reynolds, D. B.

    1994-01-01

    The first 128x128 Si:Sb blocked impurity band (BIB) detectors, manufactured by Rockwell International, are sensitive detectors from 10 to at least 40 micrometers. While further work is required to make these arrays suitable for the low backgrounds of space infrared telescopes, they can be used now for observations from the ground and aircraft.

  16. New class of biological detectors for WIMPs

    CERN Document Server

    Drukier, A K; Chonofsky, M; Church, G M; Fagaly, R L; Freese, K; Lopez, A; Sano, T; Savage, C; Wong, W P

    2014-01-01

    Weakly Interacting Massive Particles (WIMPs) may constitute a large fraction of the matter in the Universe. There are excess events in the data of DAMA/LIBRA, CoGeNT, CRESST-II, and recently CDMS-Si, which could be consistent with WIMP masses of approximately 10 GeV/c2. However, for MDM > 10 GeV/c2 null results of the CDMS-Ge, XENON, and LUX detectors may be in tension with the potential detections for certain dark matter scenarios and assuming a certain light response. We propose the use of a new class of biological dark matter (DM) detectors to further examine this light dark matter hypothesis, taking advantage of new signatures with low atomic number targets, Two types of biological DM detectors are discussed here: DNA-based detectors and enzymatic reactions (ER) based detectors. In the case of DNA-based detectors, we discuss a new implementation. In the case of ER detectors, there are four crucial phases of the detection process: a) change of state due to energy deposited by a particle; b) amplification d...

  17. Detector Simulations with DD4hep

    CERN Document Server

    AUTHOR|(SzGeCERN)668365; Frank, Markus; Gaede, Frank-Dieter; Lu, Shaojun; Nikiforou, Nikiforos; Sailer, Andre

    2017-01-01

    Detector description is a key component of detector design studies, test beam analyses, and most of particle physics experiments that require the simulation of more and more different detector geometries and event types. This paper describes DD4hep, which is an easy-to-use yet flexible and powerful detector description framework that can be used for detector simulation and also extended to specific needs for a particular working environment. Linear collider detector concepts ILD, SiD and CLICdp as well as detector development collaborations CALICE and FCal have chosen to adopt the DD4hep geometry framework and its DDG4 pathway to Geant4 as its core simulation and reconstruction tools. The DDG4 plugins suite includes a wide variety of input formats, provides access to the Geant4 particle gun or general particles source and allows for handling of Monte Carlo truth information, e.g. by linking hits and the primary particle that caused them, which is indispensable for performance and efficiency studies. An extend...

  18. State of the art timing in TOF-PET detectors with LuAG, GAGG and L(Y)SO scintillators of various sizes coupled to FBK-SiPMs

    CERN Document Server

    Gundacker, S.; Auffray, E.; Ferri, A.; Gola, A.; Nemallapudi, M.V.; Paternoster, G.; Piemonte, C.; Lecoq, P.

    2016-01-01

    Time of flight (TOF) in positron emission tomography (PET) has experienced a revival of interest after its first introduction in the eighties. This is due to a significant progress in solid state photodetectors (SiPMs) and newly developed scintillators (LSO and its derivatives). Latest developments at Fondazione Bruno Kessler (FBK) lead to the NUV-HD SiPM with a very high photon detection efficiency of around 55%. Despite the large area of 4×4 mm2 it achieves a good single photon time resolution (SPTR) of 180±5ps FWHM. Coincidence time resolution (CTR) measurements using LSO:Ce codoped with Ca scintillators yield best values of 73±2ps FWHM for 2×2×3 mm3 and 117±3ps for 2×2×20 mm3 crystal sizes. Increasing the crystal cross-section from 2×2 mm2 to 3×3 mm2 a non negligible CTR deterioration of approximately 7ps FWHM is observed. Measurements with LSO:Ce codoped Ca and LYSO:Ce scintillators with various cross-sections (1×1 mm2 - 4×4 mm2) and lengths (3mm - 30mm) will be a basis for discussing on how ...

  19. SiPM's for particle detection

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Gamal [Stefan Meyer Institute, Austrian Academy of Sciences, Boltzmanngasse 3, 1090 Vienna (Austria); Al-Azhar University, Faculty of Science, Physics Department, 11884, Cairo (Egypt); Buehler, Paul; Marton, Johann; Suzuki, Ken [Stefan Meyer Institute, Austrian Academy of Sciences, Boltzmanngasse 3, 1090 Vienna (Austria)

    2011-07-01

    Particle identification (PID) for hadrons and leptons over a large range of solid angle and momenta is an essential requirement for physics objectives of the PANDA detector. The solenoid in the target spectrometer produces a magnetic field of B{approx}2T necessary for momentum resolution of the tracking detectors. PID in the barrel section of the target, spectrometer has to work in this strong magnetic field within the solenoid, since it is surrounded by an electromagnetic calorimeter, it cannot take too much radial space. Readout of promptly emitted Cherenkov light with SiPM is a promising combination, with advantages like compactness, magnetic field resistance; simple operation and fast timing make SiPM an excellent candidate. The detection of momenta up to several GeV/c can be performed by the Detection of Internally Reflected Cherenkov (DIRC) light. The PANDA detector will feature two DIRC detectors, a DIRC in barrel geometry surrounding the target region, and a disc DIRC in the forward region. SiPM's with a sensitive area of 3mm x 3mm are on the market. We discuss here SiPM's timing performance characteristics and dependence of the operation conditions measurements performed at Stefan Meyer Institute. The single photoelectron time resolution results are also presented.

  20. GADRAS Detector Response Function.

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, Dean J.; Harding, Lee; Thoreson, Gregory G; Horne, Steven M.

    2014-11-01

    The Gamma Detector Response and Analysis Software (GADRAS) applies a Detector Response Function (DRF) to compute the output of gamma-ray and neutron detectors when they are exposed to radiation sources. The DRF is fundamental to the ability to perform forward calculations (i.e., computation of the response of a detector to a known source), as well as the ability to analyze spectra to deduce the types and quantities of radioactive material to which the detectors are exposed. This document describes how gamma-ray spectra are computed and the significance of response function parameters that define characteristics of particular detectors.

  1. The TALE Tower Detector

    Science.gov (United States)

    Bergman, D. R.

    The TA Low Energy Extension will include a Tower FluorescenceDetector. Extensive air showers at the lowest usful energies for fluorescence detectors will in general be close to the detector. This requires viewing all elevation angles to be able to reconstruct showers. The TALE Tower Detector, operating in conjunction with other TALE detectors will view elevation angles up to above 70 degrees, with an azimuthal coverage of about 90 degrees. Results from a prototype mirror operated in conjunction with the HiRes detector will also be presented.

  2. Power monitoring in space nuclear reactors using silicon carbide radiation detectors

    Science.gov (United States)

    Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

    2005-01-01

    Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

  3. Extremal surface barriers

    Energy Technology Data Exchange (ETDEWEB)

    Engelhardt, Netta; Wall, Aron C. [Department of Physics, University of California,Santa Barbara, CA 93106 (United States)

    2014-03-13

    We present a generic condition for Lorentzian manifolds to have a barrier that limits the reach of boundary-anchored extremal surfaces of arbitrary dimension. We show that any surface with nonpositive extrinsic curvature is a barrier, in the sense that extremal surfaces cannot be continuously deformed past it. Furthermore, the outermost barrier surface has nonnegative extrinsic curvature. Under certain conditions, we show that the existence of trapped surfaces implies a barrier, and conversely. In the context of AdS/CFT, these barriers imply that it is impossible to reconstruct the entire bulk using extremal surfaces. We comment on the implications for the firewall controversy.

  4. Safety-barrier diagrams

    DEFF Research Database (Denmark)

    Duijm, Nijs Jan

    2007-01-01

    are discussed. A simple method for quantification of safety-barrier diagrams is proposed, including situations where safety barriers depend on shared common elements. It is concluded that safety-barrier diagrams provide a useful framework for an electronic data structure that integrates information from risk......Safety-barrier diagrams and the related so-called "bow-tie" diagrams have become popular methods in risk analysis. This paper describes the syntax and principles for constructing consistent and valid safety-barrier diagrams. The relation with other methods such as fault trees and Bayesian networks...... analysis with operational safety management....

  5. Simulation of Multilayer Silicon Thin Films Growth on Si(111) Surface

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    The homoepitaxial growth of multilayer Si thin film on Si(111) surfaces was simulated by Monte Carlo (MC) method with realistic growth model and physical parameters. Special emphasis was placed on revealing the influence of the Ehrlich-Schwoebel (ES) barrier on the growth modes and morphologies. It is evident that there exists the ES barrier during multilayer Si thin film growth on Si (111) surface, which is deduced from the incomplete layer-by-layer growth process in the realistic experiments. The ES barrier EB=0.1~0.125 eV is estimated from the three-dimensional (3D) MC simulation and compared with the experimental results.

  6. Drift Chambers detectors; Detectores de deriva

    Energy Technology Data Exchange (ETDEWEB)

    Duran, I.; Martinez laso, L.

    1989-07-01

    We present here a review of High Energy Physics detectors based on drift chambers. The ionization, drift diffusion, multiplication and detection principles are described. Most common drift media are analysed, and a classification of the detectors according to its geometry is done. Finally the standard read-out methods are displayed and the limits of the spatial resolution are discussed. (Author) 115 refs.

  7. Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures

    Science.gov (United States)

    Jiang, Ran; Han, Zuyin; Sun, Weideng; Du, Xianghao; Wu, Zhengran; Jung, Hyung-Suk

    2015-10-01

    Ferroelectric-field-effect-tunable modulation of terahertz waves in graphene/Si:HfO2/Si stack structure was observed. The modulation shows distinct behaviors when the samples under different gate polarities. At a negative voltage, a transmission modulation depth up to ˜74% was present without depending on the photo illumination power, whereas, at a positive voltage, the modulation of Thz wave shows dependence on the illumination power, which is ascribed to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 on Si-based semiconductor process, the ferroelectricity layer of Si:HfO2 may open up an avenue for the tunable modulation of Thz wave.

  8. Investigation of the vertical electrical transport in a-Si:H/nc-Si:H superlattice thin films.

    Science.gov (United States)

    Das, Debajyoti; Kar, Debjit

    2015-07-14

    Tuning the size of silicon nano-crystallites (Si-ncs) has been realized simply by controlling the thickness of the nc-Si:H sub-layer (tnc) in the a-Si:H/nc-Si:H superlattice thin films grown by low temperature plasma processing in PE-CVD. The vertical electrical transport phenomena accomplished in superlattice films have been investigated in order to identify their effective utilization in practical device configuration. The reduced size of the Si-ncs at thinner tnc and the associated band gap widening due to quantum confinement effects generates the Coulomb potential barrier at the a-Si/nc-Si interface which in turn obstructs the transport of charge carriers to the allowed energy states in Si-ncs, leading to the Poole-Frenkel tunneling as the prevailing charge transport mechanism in force. The advantages of the conduction process governed by the Poole-Frenkel mechanism are two-fold. The lower barrier height caused by the a-Si:H sub-layer in the superlattice than the silicon oxide sub-layer in conventional structures enhances the conduction current. Moreover, increasing trapped charges in the a-Si:H sub-layer can arbitrarily increase the current conduction. Accordingly, a-Si:H/nc-Si:H superlattice structures could provide superior electrical transport in stacked layer devices e.g., multi-junction all silicon solar cells.

  9. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  10. Thermal kinetic inductance detector

    Energy Technology Data Exchange (ETDEWEB)

    Cecil, Thomas; Gades, Lisa; Miceli, Antonio; Quaranta, Orlando

    2016-12-20

    A microcalorimeter for radiation detection that uses superconducting kinetic inductance resonators as the thermometers. The detector is frequency-multiplexed which enables detector systems with a large number of pixels.

  11. Forward tracking detectors

    Indian Academy of Sciences (India)

    Klaus Mönig

    2007-11-01

    Forward tracking is an essential part of a detector at the international linear collider (ILC). The requirements for forward tracking are explained and the proposed solutions in the detector concepts are shown.

  12. Comparison of flat-panel detector and image-intensifier detector for cone-beam CT.

    Science.gov (United States)

    Baba, Rika; Konno, Yasutaka; Ueda, Ken; Ikeda, Shigeyuki

    2002-01-01

    We evaluated a flat-panel detector (FPD) (scintillator screen and a-Si photo-sensor array) for use in a cone-beam computed tomography (CT) detector and compared it with an image-intensifier detector (IID). The FPD cone-beam CT system has a higher spatial resolution than the IID system. At equal pixel sizes, the standard deviation of noise intensity of the FPD system is equal to that of the IID system. However, the circuit noise of the FPD must be reduced, especially at low doses. Our evaluations show that the FPD system has a strong potential for use as a cone-beam CT detector because of high-spatial resolution.

  13. The CAPRICE RICH detector

    Energy Technology Data Exchange (ETDEWEB)

    Basini, G. [INFN, Laboratori Nazionali di Frascati, Rome (Italy); Codino, A.; Grimani, C. [Perugia Univ. (Italy)]|[INFN, Perugia (Italy); De Pascale, M.P. [Rome Univ. `Tor Vergata` (Italy). Dip. di Fisica]|[INFN, Sezione Univ. `Tor Vergata` Rome (Italy); Cafagna, F. [Bari Univ. (Italy)]|[INFN, Bari (Italy); Golden, R.L. [New Mexico State Univ., Las Cruces, NM (United States). Particle Astrophysics Lab.; Brancaccio, F.; Bocciolini, M. [Florence Univ. (Italy)]|[INFN, Florence (Italy); Barbiellini, G.; Boezio, M. [Trieste Univ. (Italy)]|[INFN, Trieste (Italy)

    1995-09-01

    A compact RICH detector has been developed and used for particle identification in a balloon borne spectrometer to measure the flux of antimatter in the cosmic radiation. This is the first RICH detector ever used in space experiments that is capable of detecting unit charged particles, such as antiprotons. The RICH and all other detectors performed well during the 27 hours long flight.

  14. Type II superlattice technology for LWIR detectors

    Science.gov (United States)

    Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.

    2016-05-01

    SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

  15. Graphene vertical hot-electron terahertz detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ryzhii, V., E-mail: v-ryzhii@riec.tohoku.ac.jp [Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University and Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow 111005 (Russian Federation); Satou, A.; Otsuji, T. [Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Ryzhii, M. [Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580 (Japan); Mitin, V. [Department of Electrical Engineering, University at Buffalo, Buffalo, New York 1460-1920 (United States); Shur, M. S. [Departments of Electrical, Electronics, and Systems Engineering and Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2014-09-21

    We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set (such as tungsten disulfide and related materials). The operation of these detectors is enabled by the thermionic emissions from the GLs enhanced by the electrons heated by incoming THz radiation. Hence, these detectors are the hot-electron bolometric detectors. The electron heating is primarily associated with the intraband absorption (the Drude absorption). In the frame of the developed model, we calculate the responsivity and detectivity as functions of the photon energy, GL doping, and the applied voltage for the GLDs with different number of GLs. The detectors based on the cascade multiple-GL structures can exhibit a substantial photoelectric gain resulting in the elevated responsivity and detectivity. The advantages of the THz detectors under consideration are associated with their high sensitivity to the normal incident radiation and efficient operation at room temperature at the low end of the THz frequency range. Such GLDs with a metal grating, supporting the excitation of plasma oscillations in the GL-structures by the incident THz radiation, can exhibit a strong resonant response at the frequencies of several THz (in the range, where the operation of the conventional detectors based on A{sub 3}B{sub 5} materials, in particular, THz quantum-well detectors, is hindered due to a strong optical phonon radiation absorption in such materials). We also evaluate the characteristics of GLDs in the mid- and far-infrared ranges where the electron heating is due to the interband absorption in GLs.

  16. Application of Geiger-mode photosensors in Cherenkov detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gamal, Ahmed, E-mail: gamal.ahmed@assoc.oeaw.ac.a [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences, Vienna (Austria); Al-Azhar University, Faculty of Science, Physics Department, Cairo (Egypt); Paul, Buehler; Michael, Cargnelli [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences, Vienna (Austria); Roland, Hohler [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Johann, Marton [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences, Vienna (Austria); Herbert, Orth [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Ken, Suzuki [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences, Vienna (Austria)

    2011-05-21

    Silicon-based photosensors (SiPMs) working in the Geiger-mode represent an elegant solution for the readout of particle detectors working at low-light levels like Cherenkov detectors. Especially the insensitivity to magnetic fields makes this kind of sensors suitable for modern detector systems in subatomic physics which are usually employing magnets for momentum resolution. We are characterizing SiPMs of different manufacturers for selecting sensors and finding optimum operating conditions for given applications. Recently we designed and built a light concentrator prototype with 8x8 cells to increase the active photon detection area of an 8x8 SiPM (Hamamatsu MPPC S10931-100P) array. Monte Carlo studies, measurements of the collection efficiency, and tests with the MPPC were carried out. The status of these developments are presented.

  17. Application of Geiger-mode photo sensors in Cherenkov detectors

    CERN Document Server

    Ahmed, Gamal; Cargnelli, Michael; Hohler, Roland; Marton, Johann; Orth, Herbert; Suzuki, Ken

    2010-01-01

    Silicon-based photosensors (SiPMs) working in the Geiger-mode represent an elegant solution for the readout of particle detectors working at low-light levels like Cherenkov detectors. Especially the insensitivity to magnetic fields makes this kind of sensors suitable for modern detector systems in subatomic physics which are usually employing magnets for momentum resolution. In our institute we are characterizing SiPMs of different manufacturers for selecting sensors and finding optimum operating conditions for given applications. Recently we designed and built a light concentrator prototype with 8x8 cells to increase the active photon detection area of an 8x8 SiPM (Hamamatsu MPPC S10931-100P) array. Monte Carlo studies, measurements of the collection efficiency, and tests with the MPPC were carried out. The status of these developments are presented.

  18. Localization of Si/SiO2 Interface States: Properties and Physical Implications

    Science.gov (United States)

    Koiller, Belita; Dusko, Amintor; Saraiva, Andre

    2013-03-01

    Interface states (IS) form spontaneously at some semiconductor-barrier interfaces and they may improve or hinder electronic control and coherence for semiconductor-based qubits. Intrinsic Si/SiO2 IS and its hybridization to the Si bulk states were recently investigated within tight binding (TB) models. From the simplest model (1D), new insights emerge regarding the IS's energy and hybridization with the band states. In this work the 1D TB Hamiltonian is further explored, here within a Green's function formalism. The problem is solved exactly via a decimation technique based on renormalization group ideas. The IS thus obtained are strictly related to the junction of two semi-infinite chains modeling the Si material and the SiO2 barrier, excluding possible contributions from parameters (e.g. chain length) previously invoked. We obtain the energy of IS as well as the exponential longer (shorter) localization lengths into the Si (barrier) material. The IS may be probed experimentally by an external electric field, which modulates the capacitance of the system, or by the spacing between the two lowest levels, related to the valley splitting. Work partially supported by FAPERJ, CNPq, CAPES.

  19. Anisotropic Lithium Insertion Behavior in Silicon Nanowires: Binding Energy, Diffusion Barrier, and Strain Effect

    KAUST Repository

    Zhang, Qianfan

    2011-05-19

    Silicon nanowires (SiNWs) have recently been shown to be promising as high capacity lithium battery anodes. SiNWs can be grown with their long axis along several different crystallographic directions. Due to distinct atomic configuration and electronic structure of SiNWs with different axial orientations, their lithium insertion behavior could be different. This paper focuses on the characteristics of single Li defects, including binding energy, diffusion barriers, and dependence on uniaxial strain in [110], [100], [111], and [112] SiNWs. Our systematic ab initio study suggests that the Si-Li interaction is weaker when the Si-Li bond direction is aligned close to the SiNW long axis. This results in the [110] and [111] SiNWs having the highest and lowest Li binding energy, respectively, and it makes the diffusion barrier along the SiNW axis lower than other pathways. Under external strain, it was found that [110] and [001] SiNWs are the most and least sensitive, respectively. For diffusion along the axial direction, the barrier increases (decreases) under tension (compression). This feature results in a considerable difference in the magnitude of the energy barrier along different diffusion pathways. © 2011 American Chemical Society.

  20. A micron resolution optical scanner for characterization of silicon detectors.

    Science.gov (United States)

    Shukla, R A; Dugad, S R; Garde, C S; Gopal, A V; Gupta, S K; Prabhu, S S

    2014-02-01

    The emergence of high position resolution (∼10 μm) silicon detectors in recent times have highlighted the urgent need for the development of new automated optical scanners of micron level resolution suited for characterizing microscopic features of these detectors. More specifically, for the newly developed silicon photo-multipliers (SiPM) that are compact, possessing excellent photon detection efficiency with gain comparable to photo-multiplier tube. In a short time, since their invention the SiPMs are already being widely used in several high-energy physics and astrophysics experiments as the photon readout element. The SiPM is a high quantum efficiency, multi-pixel photon counting detector with fast timing and high gain. The presence of a wide variety of photo sensitive silicon detectors with high spatial resolution requires their performance evaluation to be carried out by photon beams of very compact spot size. We have designed a high resolution optical scanner that provides a monochromatic focused beam on a target plane. The transverse size of the beam was measured by the knife-edge method to be 1.7 μm at 1 - σ level. Since the beam size was an order of magnitude smaller than the typical feature size of silicon detectors, this optical scanner can be used for selective excitation of these detectors. The design and operational details of the optical scanner, high precision programmed movement of target plane (0.1 μm) integrated with general purpose data acquisition system developed for recording static and transient response photo sensitive silicon detector are reported in this paper. Entire functionality of scanner is validated by using it for selective excitation of individual pixels in a SiPM and identifying response of active and dead regions within SiPM. Results from these studies are presented in this paper.

  1. Barriers to screening mammography.

    Science.gov (United States)

    Sarma, Elizabeth A

    2015-01-01

    Breast cancer (BRCA) is the second most commonly diagnosed cancer among women in the USA, and mammography is an effective means for the early detection of BRCA. Identifying the barriers to screening mammography can inform research, policy and practice aiming to increase mammography adherence. A literature review was conducted to determine common barriers to screening mammography adherence. PsycINFO and PubMed databases were searched to identify studies published between 2000 and 2012 that examined barriers associated with reduced mammography adherence. Three thematic groups of barriers, based on social ecology, were identified from the literature: healthcare system-level, social and individual-level barriers. Researchers must consider screening behaviour in context and, therefore, should simultaneously consider each level of barriers when attempting to understand screening behaviour and create interventions to increase mammography adherence.

  2. Epitaxial silicon semiconductor detectors, past developments, future prospects

    Energy Technology Data Exchange (ETDEWEB)

    Gruhn, C.R.

    1976-01-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized.

  3. Epitaxial silicon semiconductor detectors: past developments, future prospects

    Energy Technology Data Exchange (ETDEWEB)

    Gruhn, C.R.

    1977-02-01

    A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized.

  4. High-energy detector

    Science.gov (United States)

    Bolotnikov, Aleksey E [South Setauket, NY; Camarda, Giuseppe [Farmingville, NY; Cui, Yonggang [Upton, NY; James, Ralph B [Ridge, NY

    2011-11-22

    The preferred embodiments are directed to a high-energy detector that is electrically shielded using an anode, a cathode, and a conducting shield to substantially reduce or eliminate electrically unshielded area. The anode and the cathode are disposed at opposite ends of the detector and the conducting shield substantially surrounds at least a portion of the longitudinal surface of the detector. The conducting shield extends longitudinally to the anode end of the detector and substantially surrounds at least a portion of the detector. Signals read from one or more of the anode, cathode, and conducting shield can be used to determine the number of electrons that are liberated as a result of high-energy particles impinge on the detector. A correction technique can be implemented to correct for liberated electron that become trapped to improve the energy resolution of the high-energy detectors disclosed herein.

  5. Equalized near maximum likelihood detector

    OpenAIRE

    2012-01-01

    This paper presents new detector that is used to mitigate intersymbol interference introduced by bandlimited channels. This detector is named equalized near maximum likelihood detector which combines nonlinear equalizer and near maximum likelihood detector. Simulation results show that the performance of equalized near maximum likelihood detector is better than the performance of nonlinear equalizer but worse than near maximum likelihood detector.

  6. Performance comparison of scintillators for alpha particle detectors

    Science.gov (United States)

    Morishita, Yuki; Yamamoto, Seiichi; Izaki, Kenji; Kaneko, Junichi H.; Toui, Kohei; Tsubota, Youichi; Higuchi, Mikio

    2014-11-01

    Scintillation detectors for alpha particles are often used in nuclear fuel facilities. Alpha particle detectors have also become important in the research field of radionuclide therapy using alpha emitters. ZnS(Ag) is the most often used scintillator for alpha particle detectors because its light output is high. However, the energy resolution of ZnS(Ag)-based scintillation detectors is poor because they are not transparent. A new ceramic sample, namely the cerium doped Gd2Si2O7 (GPS) scintillator, has been tested as alpha particle detector and its performances have been compared to that one of three different scintillating materials: ZnS(Ag), GAGG and a standard plastic scintillator. The different scintillating materials have been coupled to two different photodetectors, namely a photomultiplier tube (PMT) and a Silicon Photo-multiplier (Si-PM): the performances of each detection system have been compared. Promising results as far as the energy resolution performances (10% with PMT and 14% with Si-PM) have been obtained in the case of GPS and GAGG samples. Considering the quantum efficiencies of the photodetectors under test and their relation to the emission wavelength of the different scintillators, the best results were achieved coupling the GPS with the PMT and the GAGG with the Si-PM

  7. Cryogenic Detectors (Narrow Field Instruments)

    Science.gov (United States)

    Hoevers, H.; Verhoeve, P.

    basic elements of the NFI 1 detector array. With a DROID-based array of 48 times 10 elements covering the NFI 1 field of view of 0.5 arcmin, the number of signal wires would already be reduced by a factor 2.4 compared to a 48 times 48 array of single pixels. While the present prototype DROIDS are still covered with a 480 nm thick SiOx insulation layer, this layer could easily be reduced in thickness or omitted. The detection efficiency of such a device with a 500 nm thick Ta absorber would be >80% in the energy range of 100-3000eV, without any disturbing contributions from other layers as in single STJs. Further developments involve devices of lower Tc-superconductors for better energy resolution and faster diffusion (e.g. Mo). The narrow field imager 2 The NFI 2 will consist of an array of 32 times 32 detector pixels. Each detector is a microcalorimeter which consists of a a superconducting to normal phase transition edge thermometer (transition edge sensor, TES) with an operating temperature of 100 mK, and an absorber which allows a detection efficiency of >90% and a filling factor of the focal plane in excess of 90%. Single pixel microcalorimeters with a Ti/Au TES have already shown an energy resolution of 3.9 eV at 5.89 keV in combination with a thermal response time of 100 mus. These results imply that they the high-energy requirement for XEUS can be met, in terms of energy resolution and response time. It has been demonstrated that bismuth can be applied as absorber material without impeding on the detector performance. Bi increases the stopping power in excess of 90 % and allows for a high filling factor since the absorber is can be modeled in the shape of a mushroom, allowing that the wiring to the detector and the thermal support structure are placed under the hat of the mushroom. In order to realize the NFI 2 detector array, there are two major development areas. Firstly, there is the development of micromachined Si and SiN structures that will provide proper

  8. Surface-plasmon Schottky contact detector based on a symmetric metal stripe in silicon.

    Science.gov (United States)

    Scales, Christine; Breukelaar, Ian; Berini, Pierre

    2010-02-15

    A Schottky contact detector comprising a symmetric metal stripe buried in Si, capable of detecting surface plasmons at wavelengths below the bandgap of Si, is described. A model for the detector is proposed, and its performance is assessed at lambda(0)=1550 nm assuming a CoSi(2) stripe in p-type Si. End-fire coupled responsivities of about 0.1 A/W and minimum detectable powers of about -20 dBm are predicted at room temperature.

  9. Preresidue'' light charged particles from [sup 28]Si+[sup 165]Ho, [sup 16]O+[sup 197]Au, and [sup 16]O+[sup 208]Pb fusion

    Energy Technology Data Exchange (ETDEWEB)

    Fineman, B.J.; Brinkmann, K.; Caraley, A.L.; Gan, N.; McGrath, R.L.; Velkovska, J. (Physics Department, State University of New York at Stony Brook, Stony Brook, New York 11794 (United States))

    1994-10-01

    Proton and [alpha]-particle spectral shapes and multiplicities have been measured in coincidence with evaporation residues from 145 to 220 MeV [sup 28]Si+[sup 165]Ho and 115 and 140 MeV [sup 16]O+[sup 197]Au,[sup 208]Pb fusion reactions. Evaporation residues were separated using an electrostatic deflector and detected with large area surface barrier detectors. Light charged particles were detected at forward and backward angles with 14 single NaI detectors. In the context of the statistical model, the charged particle spectra provide information about the shapes and level densities of the emitting systems. Deformed emitters are inferred, and to a varying degree, an energy-dependent level density parameter is compatible with the data in each of the three cases. Implications for current fusion and fission dynamics studies are discussed.

  10. The Si Nanocrystal Trap Center Studied by Deep Level Transient Spectroscopy (DLTS)

    OpenAIRE

    Tiezheng Lv; Lili Zhao

    2014-01-01

    Si nanocrystal (NC) embedded into the SiO2 matrix was made by SiO/SiO2 superlattice method. Here we investigate the storage phenomena of MOS structure having Si NC inside the dielectric layer by high frequency C-V method and DLTS. DLTS treated the individual Si NC as a single point deep level defect in the oxide and revealed essences of Si NC storage, such as a large capture cross section at about 1–7 × 10−13 cm2 and potential barrier at about 1.6 eV. These two properties we observed are cons...

  11. Thermal stability of nanocrystalline W-Ti diffusion barrier thin films

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Nanocrystalline W-Ti diffusion barrier thin films with different phase structures and Cu/barrier/Si multilayer structures were deposited on p-type Si(100) substrates by DC magnetron sputtering.These films were annealed at different temperatures for 1 h.The diffusion barrier properties and thermal stability were studied using four-probe tester(FPP),XRD,AFM,XPS,FESEM,and HRTEM.The experimental results showed that the films were stable up to 700℃.When the annealing temperature was increased,the Cu and Ti atoms began to react and CuTi3 was formed.In addition,the high resistance Cu3Si was formed due to inter-diffusion between the Si and Cu atoms which made the surface rougher and caused the sheet resistance to increase abruptly.At the same time,failure mechanism of the nanocrystalline W-Ti diffusion barrier thin films during annealing process was also discussed.

  12. Ge(Li) detector gamma-ray spectrometer system for measurement of the spectra and production cross sections of. gamma. -rays produced by 14 MeV neutron nonelastic interaction with nuclei

    Energy Technology Data Exchange (ETDEWEB)

    Shen Ronglin; Shi Xiamin; Wu Yongshun; Xing Jinjiang; Ding Dazhao

    1982-02-01

    A 42 cm/sup 3/ Ge(Li) detector gamma-ray spectrometer system for measuring the spectra and the production cross sections of ..gamma..-rays produced by fast neutron nonelastic interaction with nuclei is described in this paper. The incident neutrons are produced by T(d,n)/sup 4/He reaction in an high tension set with the incident deuteron energy of 200 keV. The time of flight technique is used to discriminate between the scattered neutrons and gamma-rays resulting from nonelastic interaction. The ..cap alpha..-particles are picked up by a Si(Au) surface barrier detector and the ARC timing discriminaters are used in both Si(Au) and Ge(Li) channels. The overall time resolution (FWHM) of this system is 4.1 ns typically for energy selection threshold at 400keV. The block diagram of spectrometer system is described in detail. The complex complete shielding damage of Ge(Li) detector in this fast neutron field is well discussed.

  13. Nuclear physics with simple and multi-element detectors and with stable and radioactive beams

    Indian Academy of Sciences (India)

    Neil Rowley

    2001-07-01

    The phenomenon of fusion barrier distributions is discussed in the context of a problem already investigated in some detail with simple detection systems, but possessing avenues to studies with multi-detector arrays. The complementarity of research with simple and complex detectors, as well as with stable and radioactive beams, will be highlighted.

  14. The development of a silicon multiplicity detector system

    Energy Technology Data Exchange (ETDEWEB)

    Beuttenmuller, R.H.; Kraner, H.W.; Lissauer, D.; Makowiecki, D.; Polychronakos, V.; Radeka, V.; Sondericker, J.; Stephani, D. [Brookhaven National Laboratory, Upton, NY (United States); Barrette, J.; Hall, J.; Mark, S.K.; Pruneau, C.A. [McGill Univ., Montreal, Quebec (Canada); Wolfe, D. [Univ. of New Mexico, Albuquerque (United States); Borenstein, S.R. [York College-CUNY, Jamaica, NY (United States)

    1991-12-31

    The physics program and the design criteria for a Silicon Pad Detector at RHIC are reviewed. An end cap double sided readout detector configuration for RHIC is presented. Its performance as an on-line and off-line centrality tagging device is studied by means of simulations with Fritiof as the event generator. The results of an in-beam test of a prototype double-sided Si-detector are presented. Good signal-to-noise ratio are obtained with front junction and the resistive back side readout. Good separation between one and two minimum-ionizing particle signals is achieved.

  15. A Novel Stochastic Blind Adaptive Multiuser Detector for CDMA Systems

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Blind adaptive multiuser detector has become a research hotspot in recent years due to a number of advantages, but many blind adaptive algorithms involve low convergence rate. This paper presents a novel stochastic blind adaptive multiuser detector without requiring training sequences, which needs only two system parameters: the signature sequence of the desired user i, si and the variance of the additive white Gaussian noise (AWGN),σ2. Simulation results show that by reasonably choosing time varying step size, the proposed detector can not only improve the convergence rate, but also reduce the limiting NSE (Normalized Squared Error) values, so it can effectively increase the performance of the system.

  16. Converse Barrier Certificate Theorems

    DEFF Research Database (Denmark)

    Wisniewski, Rafael; Sloth, Christoffer

    2016-01-01

    This paper shows that a barrier certificate exists for any safe dynamical system. Specifically, we prove converse barrier certificate theorems for a class of structurally stable dynamical systems. Other authors have developed a related result by assuming that the dynamical system has neither sing...

  17. Skin barrier function

    DEFF Research Database (Denmark)

    2016-01-01

    Renowned experts present the latest knowledge Although a very fragile structure, the skin barrier is probably one of the most important organs of the body. Inward/out it is responsible for body integrity and outward/in for keeping microbes, chemicals, and allergens from penetrating the skin. Since...... the role of barrier integrity in atopic dermatitis and the relationship to filaggrin mutations was discovered a decade ago, research focus has been on the skin barrier, and numerous new publications have become available. This book is an interdisciplinary update offering a wide range of information...... on the subject. It covers new basic research on skin markers, including results on filaggrin and on methods for the assessment of the barrier function. Biological variation and aspects of skin barrier function restoration are discussed as well. Further sections are dedicated to clinical implications of skin...

  18. Design and prototype studies of the TOTEM Roman pot detectors

    Science.gov (United States)

    Oriunno, Marco; Battistin, Michele; David, Eric; Guglielmini, Paolo; Joram, Christian; Radermacher, Ernst; Ruggiero, Gennaro; Wu, Jihao; Vacek, Vaclav; Vins, Vaclav

    2007-10-01

    The Roman pots of the TOTEM experiment at LHC will be equipped with edgeless silicon micro-strip detectors. A detector package consists of 10 detector planes cooled at -15C in vacuum. The detector resolution is 20 μm, the overall alignment precision has to be better than 30 μm. The detector planes are composed of a kapton hybrid glued on a substrate made of low expansion alloy, CE07 with 70% Si and 30% Al. An evaporative cooling system based on the fluorocarbon C3F8 with oil-free compressors has been adopted. The throttling of the fluid is done locally through capillaries. A thermo-mechanical prototype has been assembled. The results fully match the requirements and the expectations of calculations. They show a low thermal gradient on the cards and a uniform temperature distribution over the 10 planes.

  19. Design and prototype studies of the TOTEM Roman pot detectors

    CERN Document Server

    Oriunno, M; David, E; Guglielmini, P; Joram, C; Radermacher, E; Ruggiero, G; Wu, J; Vacek, V; Vins, V

    2007-01-01

    The Roman pots of the TOTEM experiment at LHC will be equipped with edgeless silicon micro-strip detectors. A detector package consists of 10 detector planes cooled at in vacuum. The detector resolution is , the overall alignment precision has to be better than . The detector planes are composed of a kapton hybrid glued on a substrate made of low expansion alloy, CE07 with 70% Si and 30% Al. An evaporative cooling system based on the fluorocarbon C3F8 with oil-free compressors has been adopted. The throttling of the fluid is done locally through capillaries. A thermo-mechanical prototype has been assembled. The results fully match the requirements and the expectations of calculations. They show a low thermal gradient on the cards and a uniform temperature distribution over the 10 planes.

  20. Photon counting detector for the personal radiography inspection system "SIBSCAN"

    Science.gov (United States)

    Babichev, E. A.; Baru, S. E.; Grigoriev, D. N.; Leonov, V. V.; Oleynikov, V. P.; Porosev, V. V.; Savinov, G. A.

    2017-02-01

    X-ray detectors operating in the energy integrating mode are successfully used in many different applications. Nevertheless the direct photon counting detectors, having the superior parameters in comparison with the integrating ones, are rarely used yet. One of the reasons for this is the low value of the electrical signal generated by a detected photon. Silicon photomultiplier (SiPM) based scintillation counters have a high detection efficiency, high electronic gain and compact dimensions. This makes them a very attractive candidate to replace routinely used detectors in many fields. More than 10 years ago the digital scanning radiography system based on multistrip ionization chamber (MIC) was suggested at Budker Institute of Nuclear Physics. The detector demonstrates excellent radiation resistance and parameter stability after 5 year operations and an imaging of up to 1000 persons per day. Currently, the installations operate at several Russian airports and at subway stations in some cities. At the present time we design a new detector operating in the photon counting mode, having superior parameters than the gas one, based on scintillator - SiPM assemblies. This detector has close to zero noise, higher quantum efficiency and a count rate capability of more than 5 MHz per channel (20% losses), which leads to better image quality and improved detection capability. The suggested detector technology could be expanded to medical applications.

  1. Energy band design for p-type tensile strained Si/SiGe multi-quantum well infrared photodetector

    Institute of Scientific and Technical Information of China (English)

    LI Jin-tao; CHEN Song-yan; QI Dong-feng; HUANG Wei; LI Cheng; LAI Hong-kai

    2011-01-01

    The band structure of the confined states is calculated for Si/SiGe multi-quantum well infrared photodetector (M-QWIP). The influence of the Ge component in pseudosubstrate on the energy band structure of Si/Si0.54Ce0.46 multi-quantum wells (MQWs) is investigated. It is found that the high energy levels in the MQWs move up while the low energy levels move down as the Ge component in psendosubstrate increases. The influence of the barrier width on the energy band structure of MQWs is also studied based on the 6 × 6 k-p method. The results show that the Si barrier between 5 nm and 10 nm is optimized to enhance the intersubband absorption in the MQWs.

  2. Noble Gas Detectors

    CERN Document Server

    Aprile, Elena; Bolozdynya, Alexander I; Doke, Tadayoshi

    2006-01-01

    This book discusses the physical properties of noble fluids, operational principles of detectors based on these media, and the best technical solutions to the design of these detectors. Essential attention is given to detector technology: purification methods and monitoring of purity, information readout methods, electronics, detection of hard ultra-violet light emission, selection of materials, cryogenics etc.The book is mostly addressed to physicists and graduate students involved in the preparation of fundamental next generation experiments, nuclear engineers developing instrumentation

  3. 26Si excited states via one-neutron removal from a 27Si radioactive ion beam

    Science.gov (United States)

    Chen, J.; Chen, A. A.; Amthor, A. M.; Bazin, D.; Becerril, A. D.; Gade, A.; Galaviz, D.; Glasmacher, T.; Kahl, D.; Lorusso, G.; Matos, M.; Ouellet, C. V.; Pereira, J.; Schatz, H.; Smith, K.; Wales, B.; Weisshaar, D.; Zegers, R. G. T.

    2012-04-01

    A study of 26Si states by neutron removal from a fast radioactive beam of 27Si has been performed. A beam of 27Si of energy 84.3 MeV/nucleon impinged on a polypropylene foil (C3H6) of 180 mg/cm2 thickness. Deexcitation γ rays were detected with a highly segmented germanium detector array, in coincidence with the 26Si recoils, and the corresponding 26Si level energies were determined. In comparing our results to two previous γ-ray spectroscopic studies of 26Si level structures, we find good agreement with a recent measurement of the 12C(16O,2nγ)26Si reaction. Our results support the use of excitation energies from that study in helping determine the important resonance energies for the thermonuclear 25Al(p,γ)26Si reaction rate. We do not observe a bound state at 4093 keV reported in an earlier study of the 24Mg(3He,nγ)26Si reaction.

  4. ALFA Detector Control System

    CERN Document Server

    Oleiro Seabra, Luis Filipe; The ATLAS collaboration

    2015-01-01

    ALFA (Absolute Luminosity For ATLAS) is one of the sub-detectors of ATLAS (A Toroidal LHC Apparatus). The ALFA system is composed by four stations installed in the LHC tunnel 240 m away from the ATLAS interaction point. Each station has a vacuum and ventilation system, movement control and all the required electronics for signal processing. The Detector Control System (DCS) provides control and monitoring of several components and ensures the safe operation of the detector contributing to good Data Quality. This paper describes the ALFA DCS system including a detector overview, operation aspects and hardware control through a SCADA system, WinCC OA.

  5. LHCb Detector Performance

    CERN Document Server

    AUTHOR|(CDS)2075808; Adeva, Bernardo; Adinolfi, Marco; Affolder, Anthony; Ajaltouni, Ziad; Akar, Simon; Albrecht, Johannes; Alessio, Federico; Alexander, Michael; Ali, Suvayu; Alkhazov, Georgy; Alvarez Cartelle, Paula; Alves Jr, Antonio Augusto; Amato, Sandra; Amerio, Silvia; Amhis, Yasmine; An, Liupan; Anderlini, Lucio; Anderson, Jonathan; Andreassen, Rolf; Andreotti, Mirco; Andrews, Jason; Appleby, Robert; Aquines Gutierrez, Osvaldo; Archilli, Flavio; Artamonov, Alexander; Artuso, Marina; Aslanides, Elie; Auriemma, Giulio; Baalouch, Marouen; Bachmann, Sebastian; Back, John; Badalov, Alexey; Baesso, Clarissa; Baldini, Wander; Barlow, Roger; Barschel, Colin; Barsuk, Sergey; Barter, William; Batozskaya, Varvara; Battista, Vincenzo; Bay, Aurelio; Beaucourt, Leo; Beddow, John; Bedeschi, Franco; Bediaga, Ignacio; Belogurov, Sergey; Belous, Konstantin; Belyaev, Ivan; Ben-Haim, Eli; Bencivenni, Giovanni; Benson, Sean; Benton, Jack; Berezhnoy, Alexander; Bernet, Roland; Bettler, Marc-Olivier; van Beuzekom, Martinus; Bien, Alexander; Bifani, Simone; Bird, Thomas; Bizzeti, Andrea; Bjørnstad, Pål Marius; Blake, Thomas; Blanc, Frédéric; Blouw, Johan; Blusk, Steven; Bocci, Valerio; Bondar, Alexander; Bondar, Nikolay; Bonivento, Walter; Borghi, Silvia; Borgia, Alessandra; Borsato, Martino; Bowcock, Themistocles; Bowen, Espen Eie; Bozzi, Concezio; Brambach, Tobias; Bressieux, Joël; Brett, David; Britsch, Markward; Britton, Thomas; Brodzicka, Jolanta; Brook, Nicholas; Brown, Henry; Bursche, Albert; Buytaert, Jan; Cadeddu, Sandro; Calabrese, Roberto; Calvi, Marta; Calvo Gomez, Miriam; Campana, Pierluigi; Campora Perez, Daniel; Carbone, Angelo; Carboni, Giovanni; Cardinale, Roberta; Cardini, Alessandro; Carson, Laurence; Carvalho Akiba, Kazuyoshi; Casse, Gianluigi; Cassina, Lorenzo; Castillo Garcia, Lucia; Cattaneo, Marco; Cauet, Christophe; Cenci, Riccardo; Charles, Matthew; Charpentier, Philippe; Chefdeville, Maximilien; Chen, Shanzhen; Cheung, Shu-Faye; Chiapolini, Nicola; Chrzaszcz, Marcin; Ciba, Krzystof; Cid Vidal, Xabier; Ciezarek, Gregory; Clarke, Peter; Clemencic, Marco; Cliff, Harry; Closier, Joel; Coco, Victor; Cogan, Julien; Cogneras, Eric; Cogoni, Violetta; Cojocariu, Lucian; Collazuol, Gianmaria; Collins, Paula; Comerma-Montells, Albert; Contu, Andrea; Cook, Andrew; Coombes, Matthew; Coquereau, Samuel; Corti, Gloria; Corvo, Marco; Counts, Ian; Couturier, Benjamin; Cowan, Greig; Craik, Daniel Charles; Crocombe, Andrew; Cruz Torres, Melissa Maria; Cunliffe, Samuel; Currie, Robert; D'Ambrosio, Carmelo; Dalseno, Jeremy; David, Pascal; David, Pieter; Davis, Adam; De Bruyn, Kristof; De Capua, Stefano; De Cian, Michel; De Miranda, Jussara; De Paula, Leandro; De Silva, Weeraddana; De Simone, Patrizia; Decamp, Daniel; Deckenhoff, Mirko; Del Buono, Luigi; Déléage, Nicolas; Derkach, Denis; Deschamps, Olivier; Dettori, Francesco; Di Canto, Angelo; Dijkstra, Hans; Donleavy, Stephanie; Dordei, Francesca; Dorigo, Mirco; Dosil Suárez, Alvaro; Dossett, David; Dovbnya, Anatoliy; Dreimanis, Karlis; Dujany, Giulio; Dupertuis, Frederic; Durante, Paolo; Dzhelyadin, Rustem; Dziurda, Agnieszka; Dzyuba, Alexey; Easo, Sajan; Egede, Ulrik; Egorychev, Victor; Eidelman, Semen; Eisenhardt, Stephan; Eitschberger, Ulrich; Ekelhof, Robert; Eklund, Lars; El Rifai, Ibrahim; Elsasser, Christian; Ely, Scott; Esen, Sevda; Evans, Hannah Mary; Evans, Timothy; Falabella, Antonio; Färber, Christian; Farinelli, Chiara; Farley, Nathanael; Farry, Stephen; Fay, Robert; Ferguson, Dianne; Fernandez Albor, Victor; Ferreira Rodrigues, Fernando; Ferro-Luzzi, Massimiliano; Filippov, Sergey; Fiore, Marco; Fiorini, Massimiliano; Firlej, Miroslaw; Fitzpatrick, Conor; Fiutowski, Tomasz; Fol, Philip; Fontana, Marianna; Fontanelli, Flavio; Forty, Roger; Francisco, Oscar; Frank, Markus; Frei, Christoph; Frosini, Maddalena; Fu, Jinlin; Furfaro, Emiliano; Gallas Torreira, Abraham; Galli, Domenico; Gallorini, Stefano; Gambetta, Silvia; Gandelman, Miriam; Gandini, Paolo; Gao, Yuanning; García Pardiñas, Julián; Garofoli, Justin; Garra Tico, Jordi; Garrido, Lluis; Gascon, David; Gaspar, Clara; Gauld, Rhorry; Gavardi, Laura; Geraci, Angelo; Gersabeck, Evelina; Gersabeck, Marco; Gershon, Timothy; Ghez, Philippe; Gianelle, Alessio; Gianì, Sebastiana; Gibson, Valerie; Giubega, Lavinia-Helena; Gligorov, Vladimir; Göbel, Carla; Golubkov, Dmitry; Golutvin, Andrey; Gomes, Alvaro; Gotti, Claudio; Grabalosa Gándara, Marc; Graciani Diaz, Ricardo; Granado Cardoso, Luis Alberto; Graugés, Eugeni; Graverini, Elena; Graziani, Giacomo; Grecu, Alexandru; Greening, Edward; Gregson, Sam; Griffith, Peter; Grillo, Lucia; Grünberg, Oliver; Gui, Bin; Gushchin, Evgeny; Guz, Yury; Gys, Thierry; Hadjivasiliou, Christos; Haefeli, Guido; Haen, Christophe; Haines, Susan; Hall, Samuel; Hamilton, Brian; Hampson, Thomas; Han, Xiaoxue; Hansmann-Menzemer, Stephanie; Harnew, Neville; Harnew, Samuel; Harrison, Jonathan; He, Jibo; Head, Timothy; Heijne, Veerle; Hennessy, Karol; Henrard, Pierre; Henry, Louis; Hernando Morata, Jose Angel; van Herwijnen, Eric; Heß, Miriam; Hicheur, Adlène; Hill, Donal; Hoballah, Mostafa; Hombach, Christoph; Hulsbergen, Wouter; Hunt, Philip; Hussain, Nazim; Hutchcroft, David; Hynds, Daniel; Idzik, Marek; Ilten, Philip; Jacobsson, Richard; Jaeger, Andreas; Jalocha, Pawel; Jans, Eddy; Jaton, Pierre; Jawahery, Abolhassan; Jing, Fanfan; John, Malcolm; Johnson, Daniel; Jones, Christopher; Joram, Christian; Jost, Beat; Jurik, Nathan; Kandybei, Sergii; Kanso, Walaa; Karacson, Matthias; Karbach, Moritz; Karodia, Sarah; Kelsey, Matthew; Kenyon, Ian; Ketel, Tjeerd; Khanji, Basem; Khurewathanakul, Chitsanu; Klaver, Suzanne; Klimaszewski, Konrad; Kochebina, Olga; Kolpin, Michael; Komarov, Ilya; Koopman, Rose; Koppenburg, Patrick; Korolev, Mikhail; Kozlinskiy, Alexandr; Kravchuk, Leonid; Kreplin, Katharina; Kreps, Michal; Krocker, Georg; Krokovny, Pavel; Kruse, Florian; Kucewicz, Wojciech; Kucharczyk, Marcin; Kudryavtsev, Vasily; Kurek, Krzysztof; Kvaratskheliya, Tengiz; La Thi, Viet Nga; Lacarrere, Daniel; Lafferty, George; Lai, Adriano; Lambert, Dean; Lambert, Robert W; Lanfranchi, Gaia; Langenbruch, Christoph; Langhans, Benedikt; Latham, Thomas; Lazzeroni, Cristina; Le Gac, Renaud; van Leerdam, Jeroen; Lees, Jean-Pierre; Lefèvre, Regis; Leflat, Alexander; Lefrançois, Jacques; Leo, Sabato; Leroy, Olivier; Lesiak, Tadeusz; Leverington, Blake; Li, Yiming; Likhomanenko, Tatiana; Liles, Myfanwy; Lindner, Rolf; Linn, Christian; Lionetto, Federica; Liu, Bo; Lohn, Stefan; Longstaff, Iain; Lopes, Jose; Lopez-March, Neus; Lowdon, Peter; Lucchesi, Donatella; Luo, Haofei; Lupato, Anna; Luppi, Eleonora; Lupton, Oliver; Machefert, Frederic; Machikhiliyan, Irina V; Maciuc, Florin; Maev, Oleg; Malde, Sneha; Malinin, Alexander; Manca, Giulia; Mancinelli, Giampiero; Mapelli, Alessandro; Maratas, Jan; Marchand, Jean François; Marconi, Umberto; Marin Benito, Carla; Marino, Pietro; Märki, Raphael; Marks, Jörg; Martellotti, Giuseppe; Martens, Aurelien; Martín Sánchez, Alexandra; Martinelli, Maurizio; Martinez Santos, Diego; Martinez Vidal, Fernando; Martins Tostes, Danielle; Massafferri, André; Matev, Rosen; Mathe, Zoltan; Matteuzzi, Clara; Mazurov, Alexander; McCann, Michael; McCarthy, James; McNab, Andrew; McNulty, Ronan; McSkelly, Ben; Meadows, Brian; Meier, Frank; Meissner, Marco; Merk, Marcel; Milanes, Diego Alejandro; Minard, Marie-Noelle; Moggi, Niccolò; Molina Rodriguez, Josue; Monteil, Stephane; Morandin, Mauro; Morawski, Piotr; Mordà, Alessandro; Morello, Michael Joseph; Moron, Jakub; Morris, Adam Benjamin; Mountain, Raymond; Muheim, Franz; Müller, Katharina; Mussini, Manuel; Muster, Bastien; Naik, Paras; Nakada, Tatsuya; Nandakumar, Raja; Nasteva, Irina; Needham, Matthew; Neri, Nicola; Neubert, Sebastian; Neufeld, Niko; Neuner, Max; Nguyen, Anh Duc; Nguyen, Thi-Dung; Nguyen-Mau, Chung; Nicol, Michelle; Niess, Valentin; Niet, Ramon; Nikitin, Nikolay; Nikodem, Thomas; Novoselov, Alexey; O'Hanlon, Daniel Patrick; Oblakowska-Mucha, Agnieszka; Obraztsov, Vladimir; Oggero, Serena; Ogilvy, Stephen; Okhrimenko, Oleksandr; Oldeman, Rudolf; Onderwater, Gerco; Orlandea, Marius; Otalora Goicochea, Juan Martin; Owen, Patrick; Oyanguren, Maria Arantza; Pal, Bilas Kanti; Palano, Antimo; Palombo, Fernando; Palutan, Matteo; Panman, Jacob; Papanestis, Antonios; Pappagallo, Marco; Pappalardo, Luciano; Parkes, Christopher; Parkinson, Christopher John; Passaleva, Giovanni; Patel, Girish; Patel, Mitesh; Patrignani, Claudia; Pearce, Alex; Pellegrino, Antonio; Penso, Gianni; Pepe Altarelli, Monica; Perazzini, Stefano; Perret, Pascal; Perrin-Terrin, Mathieu; Pescatore, Luca; Pesen, Erhan; Pessina, Gianluigi; Petridis, Konstantin; Petrolini, Alessandro; Picatoste Olloqui, Eduardo; Pietrzyk, Boleslaw; Pilař, Tomas; Pinci, Davide; Pistone, Alessandro; Playfer, Stephen; Plo Casasus, Maximo; Polci, Francesco; Poluektov, Anton; Polyakov, Ivan; Polycarpo, Erica; Popov, Alexander; Popov, Dmitry; Popovici, Bogdan; Potterat, Cédric; Price, Eugenia; Price, Joseph David; Prisciandaro, Jessica; Pritchard, Adrian; Prouve, Claire; Pugatch, Valery; Puig Navarro, Albert; Punzi, Giovanni; Qian, Wenbin; Rachwal, Bartolomiej; Rademacker, Jonas; Rakotomiaramanana, Barinjaka; Rama, Matteo; Rangel, Murilo; Raniuk, Iurii; Rauschmayr, Nathalie; Raven, Gerhard; Redi, Federico; Reichert, Stefanie; Reid, Matthew; dos Reis, Alberto; Ricciardi, Stefania; Richards, Sophie; Rihl, Mariana; Rinnert, Kurt; Rives Molina, Vincente; Robbe, Patrick; Rodrigues, Ana Barbara; Rodrigues, Eduardo; Rodriguez Perez, Pablo; Roiser, Stefan; Romanovsky, Vladimir; Romero Vidal, Antonio; Rotondo, Marcello; Rouvinet, Julien; Ruf, Thomas; Ruiz, Hugo; Ruiz Valls, Pablo; Saborido Silva, Juan Jose; Sagidova, Naylya; Sail, Paul; Saitta, Biagio; Salustino Guimaraes, Valdir; Sanchez Mayordomo, Carlos; Sanmartin Sedes, Brais; Santacesaria, Roberta; Santamarina Rios, Cibran; Santovetti, Emanuele; Sarti, Alessio; Satriano, Celestina; Satta, Alessia; Saunders, Daniel Martin; Savrina, Darya; Schiller, Manuel; Schindler, Heinrich; Schlupp, Maximilian; Schmelling, Michael; Schmidt, Burkhard; Schneider, Olivier; Schopper, Andreas; Schune, Marie Helene; Schwemmer, Rainer; Sciascia, Barbara; Sciubba, Adalberto; Semennikov, Alexander; Sepp, Indrek; Serra, Nicola; Serrano, Justine; Sestini, Lorenzo; Seyfert, Paul; Shapkin, Mikhail; Shapoval, Illya; Shcheglov, Yury; Shears, Tara; Shekhtman, Lev; Shevchenko, Vladimir; Shires, Alexander; Silva Coutinho, Rafael; Simi, Gabriele; Sirendi, Marek; Skidmore, Nicola; Skillicorn, Ian; Skwarnicki, Tomasz; Smith, Anthony; Smith, Edmund; Smith, Eluned; Smith, Jackson; Smith, Mark; Snoek, Hella; Sokoloff, Michael; Soler, Paul; Soomro, Fatima; Souza, Daniel; Souza De Paula, Bruno; Spaan, Bernhard; Sparkes, Ailsa; Spradlin, Patrick; Sridharan, Srikanth; Stagni, Federico; Stahl, Marian; Stahl, Sascha; Steinkamp, Olaf; Stenyakin, Oleg; Stevenson, Scott; Stoica, Sabin; Stone, Sheldon; Storaci, Barbara; Stracka, Simone; Straticiuc, Mihai; Straumann, Ulrich; Stroili, Roberto; Subbiah, Vijay Kartik; Sun, Liang; Sutcliffe, William; Swientek, Krzysztof; Swientek, Stefan; Syropoulos, Vasileios; Szczekowski, Marek; Szczypka, Paul; Szumlak, Tomasz; T'Jampens, Stephane; Teklishyn, Maksym; Tellarini, Giulia; Teubert, Frederic; Thomas, Christopher; Thomas, Eric; van Tilburg, Jeroen; Tisserand, Vincent; Tobin, Mark; Tolk, Siim; Tomassetti, Luca; Tonelli, Diego; Topp-Joergensen, Stig; Torr, Nicholas; Tournefier, Edwige; Tourneur, Stephane; Tran, Minh Tâm; Tresch, Marco; Tsaregorodtsev, Andrei; Tsopelas, Panagiotis; Tuning, Niels; Ubeda Garcia, Mario; Ukleja, Artur; Ustyuzhanin, Andrey; Uwer, Ulrich; Vacca, Claudia; Vagnoni, Vincenzo; Valenti, Giovanni; Vallier, Alexis; Vazquez Gomez, Ricardo; Vazquez Regueiro, Pablo; Vázquez Sierra, Carlos; Vecchi, Stefania; Velthuis, Jaap; Veltri, Michele; Veneziano, Giovanni; Vesterinen, Mika; Viaud, Benoit; Vieira, Daniel; Vieites Diaz, Maria; Vilasis-Cardona, Xavier; Vollhardt, Achim; Volyanskyy, Dmytro; Voong, David; Vorobyev, Alexey; Vorobyev, Vitaly; Voß, Christian; de Vries, Jacco; Waldi, Roland; Wallace, Charlotte; Wallace, Ronan; Walsh, John; Wandernoth, Sebastian; Wang, Jianchun; Ward, David; Watson, Nigel; Websdale, David; Whitehead, Mark; Wicht, Jean; Wiedner, Dirk; Wilkinson, Guy; Williams, Matthew; Williams, Mike; Wilschut, Hans; Wilson, Fergus; Wimberley, Jack; Wishahi, Julian; Wislicki, Wojciech; Witek, Mariusz; Wormser, Guy; Wotton, Stephen; Wright, Simon; Wyllie, Kenneth; Xie, Yuehong; Xing, Zhou; Xu, Zhirui; Yang, Zhenwei; Yuan, Xuhao; Yushchenko, Oleg; Zangoli, Maria; Zavertyaev, Mikhail; Zhang, Liming; Zhang, Wen Chao; Zhang, Yanxi; Zhelezov, Alexey; Zhokhov, Anatoly; Zhong, Liang; Zvyagin, Alexander

    2015-01-01

    The LHCb detector is a forward spectrometer at the Large Hadron Collider (LHC) at CERN. The experiment is designed for precision measurements of CP violation and rare decays of beauty and charm hadrons. In this paper the performance of the various LHCb sub-detectors and the trigger system are described, using data taken from 2010 to 2012. It is shown that the design criteria of the experiment have been met. The excellent performance of the detector has allowed the LHCb collaboration to publish a wide range of physics results, demonstrating LHCb's unique role, both as a heavy flavour experiment and as a general purpose detector in the forward region.

  6. ALFA Detector Control System

    CERN Document Server

    Oleiro Seabra, Luis Filipe; The ATLAS collaboration

    2015-01-01

    ALFA (Absolute Luminosity For ATLAS) is one of the sub-detectors of ATLAS/LHC. The ALFA system is composed by two stations installed in the LHC tunnel 240 m away from each side of the ATLAS interaction point. Each station has a vacuum and ventilation system, movement control and all the required electronic for signal processing. The Detector Control System (DCS) provides control and monitoring of several components and ensures the safe operation of the detector contributing to good Data Quality. This paper describes the ALFA DCS system including a detector overview, operation aspects and hardware control through a SCADA system, WinCC OA.

  7. Composite layers for barrier coatings on polymers

    Science.gov (United States)

    Brochhagen, Markus; Vorkoetter, Christoph; Boeke, Marc; Benedikt, Jan

    2016-09-01

    Amorphous hydrogenated carbon (a-C:H), amorphous hydrogenated silicon (a-Si:H), and SiO2 thin films are of high interest because they can serve as a gas barrier on polymers. To understand how the coating changes the overall barrier properties of the thin film-polymer system, optical, mechanical, and barrier properties have to be studied. One of the important characteristic of such coatings is their compressive stress, which has beneficial as well as unwanted effects. The stress can cause deformation of the bulk material or de-lamination of the film. The mechanical stability can be improved and it is possible to reduce cracking due to elongation, as the compressive stress can compensate externally applied tensile strain. Stress and mechanical properties of composite layers can be manipulated directly by embedding nanoparticles in an amorphous matrix film. Therefore nanoparticles and amorphous layers are investigated before they can be assembled in a composite layer. Growth rates as well as optical and mechanical properties are explored in this work. An inductively coupled plasma source was used for all amorphous layers and the silicon nanoparticles with diameter around 5 nm were produced in a capacitively coupled plasma reactor. This work is supported by DFG within SFB-TR87.

  8. Oxynitride Thin Film Barriers for PV Packaging

    Energy Technology Data Exchange (ETDEWEB)

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  9. A virtual detector approach to tunnel ionization and tunneling times

    CERN Document Server

    Teeny, Nicolas; Bauke, Heiko

    2016-01-01

    Tunneling times in atomic ionization is studied theoretically by a virtual detector approach. A virtual detector is a hypothetical device that allows to monitor the wave-function's density with spatial and temporal resolution during the ionization process. With this theoretical approach, it becomes possible to define unique moments when the electron enters and leaves with highest probability the classically forbidden region from first principles and a tunneling time can be specified unambiguously. It is shown that neither the moment when the electron enters the tunneling barrier nor when it leaves the tunneling barrier coincide with the moment when the external electric field reaches its maximum. Under the tunneling barrier as well as at the exit the electron has a nonzero velocity in electric field direction. This nonzero exit velocity has to be incorporated when the free motion of the electron is modeled by classical equations of motion.

  10. International Large Detector. Letter of intent

    Energy Technology Data Exchange (ETDEWEB)

    Stoeck, Holger [Sydney Univ., NSW (Australia). Falkiner High Energy Physics Group; Bergauer, Thomas; Dragicevic, Marko [Oesterreichische Akademie der Wissenschaften, Vienna (AT). Inst. fuer Hochenergiephysik] (and others)

    2010-07-01

    In the summer of 2007, the GLD concept study group, whose membership was largely based in Asia, and the LDC concept study group, which was mostly based in Europe with a strong north american membership, joined forces to produce a single Letter of Intent for a detector at the International Linear Collider, and formed the ILD concept group. Both the GLD and LDC concepts used the particle flow algorithm for jet reconstruction and a TPC for the central tracker. The basic parameters of the two concepts such as the size of the detector and the strength of the solenoid field, however, were quite different and had to be unified in order to write this letter of intent for ILD. Also, other critical details such as the interaction region design had to be unified. This was a non-trivial task, neither politically nor sociologically. The newly-formed concept study group, the ILD group, created a management team and engaged in intense studies to define the ILD detector concept by scientifically optimising the detector designs. The process has worked remarkably well, and we present here the outcome of this study as well as the large amount of studies that preceded separately by the two older concept groups. The ILD detector concept is now well defined, even though some technology choices are still open. One of the merits of unifying the detector concepts was that it revitalised the studies on physics performance and detector designs. We believe that the level of sophistication of the simulation and physics analyses has reached a high degree of sophistication for a detector group at this stage. This was achieved through collaboration and competition, and is the result of a productive learning process. The unification had also positive effects on the subdetector R and D efforts. Most R and D on detector technologies relevant to the GLD and LDC groups is being performed within the framework of detector R and D collaborations such as LCTPC, SiLC, CALICE, and FCAL which pursue their

  11. The {beta}2p decay mechanism of {sup 31}Ar[23.40.Hc; 27.30.+t; Radioactivity 31Ar({beta}+p) [from Ca(p,3pxn) reaction]; Measured {beta}-delayed protons Ep, E2p; pp energy and angular correlations; 31Ar deduced {beta}1p and {beta}2p decay channels; 30S, 31Cl deduced levels, T, {pi}, branching ratios; CaO target; On-line mass separation; Double sided Si strip detector; Si p-i-n detectors; Surface barrier Si detector

    Energy Technology Data Exchange (ETDEWEB)

    Fynbo, H.O.U.; Borge, M.J.G.; Axelsson, L.; Aeystoe, J.; Bergmann, U.C.; Fraile, L.M.; Honkanen, A.; Hornshoej, P.; Jading, Y.; Jokinen, A.; Jonson, B.; Martel, I.; Mukha, I.; Nilsson, T.; Nyman, G.; Oinonen, M.; Piqueras, I.; Riisager, K.; Siiskonen, T.; Smedberg, M.H.; Tengblad, O.; Thaysen, J.; Wenander, F

    2000-09-11

    We have measured the beta-decay of {sup 31}Ar with a high granularity setup sensitive to multiparticle decay branches. Two-proton emission is observed from the isobaric analog state in {sup 31}Cl to the four lowest states in {sup 29}P and furthermore from a large number of states fed in Gamow-Teller transitions. The mechanism of two-proton emission is studied via energy and angular correlations between the two protons. In all cases the mechanism is found to be sequential yielding information about states in {sup 30}S up to 8 MeV excitation energy. Improved data on the {beta}-delayed one-proton branches together with the two-proton data provide precise information about the beta-strength distribution up to 15 MeV excitation energy.

  12. Recycler barrier RF buckets

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, C.M.; /Fermilab

    2011-03-01

    The Recycler Ring at Fermilab uses a barrier rf systems for all of its rf manipulations. In this paper, I will give an overview of historical perspective on barrier rf system, the longitudinal beam dynamics issues, aspects of rf linearization to produce long flat bunches and methods used for emittance measurements of the beam in the RR barrier rf buckets. Current rf manipulation schemes used for antiproton beam stacking and longitudinal momentum mining of the RR beam for the Tevatron collider operation are explained along with their importance in spectacular success of the Tevatron luminosity performance.

  13. The physics benchmark processes for the detector performance studies used in CLIC CDR Volume 3

    CERN Document Server

    Allanach, B.J.; Desch, K.; Ellis, J.; Giudice, G.; Grefe, C.; Kraml, S.; Lastovicka, T.; Linssen, L.; Marschall, J.; Martin, S.P.; Muennich, A.; Poss, S.; Roloff, P.; Simon, F.; Strube, J.; Thomson, M.; Wells, J.D.

    2012-01-01

    This note describes the detector benchmark processes used in volume 3 of the CLIC conceptual design report (CDR), which explores a staged construction and operation of the CLIC accelerator. The goal of the detector benchmark studies is to assess the performance of the CLIC ILD and CLIC SiD detector concepts for different physics processes and at a few CLIC centre-of-mass energies.

  14. Pixel detector readout chip

    CERN Multimedia

    1991-01-01

    Close-up of a pixel detector readout chip. The photograph shows an aera of 1 mm x 2 mm containing 12 separate readout channels. The entire chip contains 1000 readout channels (around 80 000 transistors) covering a sensitive area of 8 mm x 5 mm. The chip has been mounted on a silicon detector to detect high energy particles.

  15. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  16. ALICE Photon Multiplicity Detector

    CERN Multimedia

    Nayak, T

    2013-01-01

    Photon Multiplicity Detector (PMD) measures the multiplicity and spatial distribution of photons in the forward region of ALICE on a event-by-event basis. PMD is a pre-shower detector having fine granularity and full azimuthal coverage in the pseudo-rapidity region 2.3 < η < 3.9.

  17. Detector Systems at CLIC

    CERN Document Server

    Simon, Frank

    2011-01-01

    The Compact Linear Collider CLIC is designed to deliver e+e- collisions at a center of mass energy of up to 3 TeV. The detector systems at this collider have to provide highly efficient tracking and excellent jet energy resolution and hermeticity for multi-TeV final states with multiple jets and leptons. In addition, the detector systems have to be capable of distinguishing physics events from large beam-induced background at a crossing frequency of 2 GHz. Like for the detector concepts at the ILC, CLIC detectors are based on event reconstruction using particle flow algorithms. The two detector concepts for the ILC, ILD and SID, were adapted for CLIC using calorimeters with dense absorbers limiting leakage through increased compactness, as well as modified forward and vertex detector geometries and precise time stamping to cope with increased background levels. The overall detector concepts for CLIC are presented, with particular emphasis on the main detector and engineering challenges, such as: the ultra-thi...

  18. The LDC detector concept

    Indian Academy of Sciences (India)

    Ties Behnke; LDC Concept Group

    2007-11-01

    In preparation of the experimental program at the international linear collider (ILC), the large detector concept (LDC) is being developed. The main points of the LDC are a large volume gaseous tracking system, combined with high precision vertex detector and an extremely granular calorimeter. The main design force behind the LDC is the particle flow concept.

  19. CMS Detector Posters

    CERN Multimedia

    2016-01-01

    CMS Detector posters (produced in 2000): CMS installation CMS collaboration From the Big Bang to Stars LHC Magnetic Field Magnet System Trackering System Tracker Electronics Calorimetry Eletromagnetic Calorimeter Hadronic Calorimeter Muon System Muon Detectors Trigger and data aquisition (DAQ) ECAL posters (produced in 2010, FR & EN): CMS ECAL CMS ECAL-Supermodule cooling and mechatronics CMS ECAL-Supermodule assembly

  20. The PERDaix detector

    Energy Technology Data Exchange (ETDEWEB)

    Bachlechner, Andreas; Beischer, Bastian; Greim, Roman [I. Physikalisches Institut B, RWTH Aachen University, Aachen 52056 (Germany); Kirn, Thomas, E-mail: kirn@physik.rwth-aachen.de [I. Physikalisches Institut B, RWTH Aachen University, Aachen 52056 (Germany); Mai, Carsten; Yearwood, Gregorio Roper; Schael, Stefan; Schug, David; Tholen, Heiner; Wienkenhoever, Jens [I. Physikalisches Institut B, RWTH Aachen University, Aachen 52056 (Germany)

    2012-12-11

    The PERDaix (Proton Electron Radiation Detector Aix-la-Chapelle) detector is designed to measure charged particles in cosmic rays. It can distinguish particle species up to 5 GV rigidity. PERDaix was flown on the BEXUS-11 balloon on 23rd November 2010. The detector has the dimensions of 246 Multiplication-Sign 400 Multiplication-Sign 859 mm{sup 3}, a geometrical acceptance of 32 cm{sup 2}sr, a low weight of 40 kg and a low power consumption of 60 W. The spectrometer consists of a time-of-flight system, a scintillating fiber tracking detector, a permanent magnet and a transition radiation detector. Silicon photomultipliers are used as photodetectors in the time-of-flight and the tracker system.

  1. The PERDaix detector

    Science.gov (United States)

    Bachlechner, Andreas; Beischer, Bastian; Greim, Roman; Kirn, Thomas; Mai, Carsten; Yearwood, Gregorio Roper; Schael, Stefan; Schug, David; Tholen, Heiner; Wienkenhöver, Jens

    2012-12-01

    The PERDaix (Proton Electron Radiation Detector Aix-la-Chapelle) detector is designed to measure charged particles in cosmic rays. It can distinguish particle species up to 5 GV rigidity. PERDaix was flown on the BEXUS-11 balloon on 23rd November 2010. The detector has the dimensions of 246×400×859 mm3, a geometrical acceptance of 32 cm2sr, a low weight of 40 kg and a low power consumption of 60 W. The spectrometer consists of a time-of-flight system, a scintillating fiber tracking detector, a permanent magnet and a transition radiation detector. Silicon photomultipliers are used as photodetectors in the time-of-flight and the tracker system.

  2. ATLAS ITk Pixel detector

    CERN Document Server

    Gemme, Claudia; The ATLAS collaboration

    2016-01-01

    The high luminosity upgrade of the LHC (HL-LHC) in 2026 will provide new challenge to the ATLAS tracker. The current inner detector will be replaced with a whole silicon tracker which will consist of a five barrel layer Pixel detector surrounded by a four barrel layer Strip detector. The expected high radiation level are requiring the development of upgraded silicon sensors as well as new a front-end chip. The dense tracking environment will require finer granularity detectors. The data rates will require new technologies for high bandwidth data transmission and handling. The current status of the HL-LHC ATLA Pixel detector developments as well as the various layout options will be reviewed.

  3. Diffusion barrier characteristics of co monolayer prepared by Langmuir Blodgett technique

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Sumit, E-mail: sumitelsd2007@gmail.com [Electronic Science Department, Kurukshetra University, Kurukshetra, Haryana 136119 (India); Kumar, Mukesh, E-mail: kumarmukesh@gmail.com [Department of Electrical Engineering, College of Engineering at Wadi Aldawasir, Prince Sattam Bin Abdulaziz University, Wadi Aldawasir 11991 (Saudi Arabia); Rani, Sumita [Electronic Science Department, Kurukshetra University, Kurukshetra, Haryana 136119 (India); Kumar, Dinesh, E-mail: dineshelsd@gmail.com [Electronic Science Department, Kurukshetra University, Kurukshetra, Haryana 136119 (India)

    2016-04-30

    Graphical abstract: Thermal stability of structures (a) Cu/SiO{sub 2}/Si and (b) Cu/Co/SiO{sub 2}/Si, indicating that presence of thin cobalt layer improves the thermal stability of the structure up to 600 °C. - Highlights: • Monolayers of cobalt were deposited on SiO{sub 2}/Si substrates using LB technique. • Copper layers were deposited on this structures using thermal evaporation method. • Thermal stability was determined by annealing the structures at various temperatures. • The structure was found to be stable up to 650 °C. - Abstract: Monolayers of Co over SiO{sub 2}/Si substrate were deposited using Langmuir Blodgett (LB) technique. The diffusion barrier capability of Co layer was evaluated against copper diffusion. The structure of the deposited Co layer was analyzed using X-ray photoelectron spectroscopy (XPS), Energy Dispersive X-ray Spectroscopy (EDS) and Atomic force microscopy (AFM) techniques. Thermal stability of Cu/SiO{sub 2}/Si and Cu/Co/SiO{sub 2}/Si test structures was studied and compared using X-ray diffraction (XRD), scanning electron microscope (SEM) and four probe techniques. The samples were annealed at different temperatures starting from 200 °C up to 700 °C in vacuum for 30 min. XRD results indicated that combination of Co/SiO{sub 2} worked as diffusion barrier up to 550 °C whereas SiO{sub 2} alone could work as barrier only up to 300 °C. Sheet resistance of these samples was measured as a function of annealing temperature which also supports XRD results. C–V curves of these structures under the influence of Biased Thermal Stress (BTS) were analyzed. BTS was applied at 2.5 MV cm{sup −1} at 150 °C. Results showed that in the presence of Co barrier layer there was no shift in the C–V curve even after 90 min of BTS while in the absence of barrier there was a significant shift in the C–V curve even after 30 min of BTS. Further these test structures were examined for leakage current density (j{sub L}) at same BTS

  4. Barriers to Effective Listening.

    Science.gov (United States)

    Hulbert, Jack E.

    1989-01-01

    Discusses the following barriers which interfere with listening efficiency: content, speaker, medium, distractions, mindset, language, listening speed, and feedback. Suggests ways to combat these obstacles to accurate comprehension. (MM)

  5. [Vascular endothelial Barrier Function].

    Science.gov (United States)

    Ivanov, A N; Puchinyan, D M; Norkin, I A

    2015-01-01

    Endothelium is an important regulator of selective permeability of the vascular wall for different molecules and cells. This review summarizes current data on endothelial barrier function. Endothelial glycocalyx structure, its function and role in the molecular transport and leukocytes migration across the endothelial barrier are discussed. The mechanisms of transcellular transport of macromolecules and cell migration through endothelial cells are reviewed. Special section of this article addresses the structure and function of tight and adherens endothelial junction, as well as their importance for the regulation of paracellular transport across the endothelial barrier. Particular attention is paid to the signaling mechanism of endothelial barrier function regulation and the factors that influence on the vascular permeability.

  6. Theoretical prediction of novel ultrafine nanowires formed by Si12C12 cage-like clusters

    Science.gov (United States)

    Yong, Yongliang; Song, Bin; He, Pimo

    2014-02-01

    Using density functional theory calculations, we predict that novel SiC ultrafine nanowires can be produced via the coalescence of stable Si12C12 clusters. For the isolated Si12C12 clusters, we find that the cage-like structure with a distinct segregation between Si and C atoms is energetically more favourable than the fullerene-like structure with alternating Si-C bonds. Via the coalescence of Si12C12 clusters, three novel stable nanowires have been characterised. The band structure reveals that these nanowires are semiconductors with narrow gap, indicating that they may be used as infrared detectors and thermoelectrics.

  7. Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization

    Science.gov (United States)

    Wang, Yuechun; Chen, Xiuhua; Ma, Wenhui; Shang, Yudong; Lei, Zhengtao; Xiang, Fuwei

    2017-02-01

    NiCrB films were deposited on Si substrates using electroless deposition as a diffusion barrier layer for Cu interconnections. Samples of the prepared NiCrB/SiO2/Si and NiCrB/Cu/NiCrB/SiO2/Si were annealed at temperatures ranging from 500 °C to 900 °C. The reaction mechanism of the electroless deposition of the NiCrB film, the failure temperature and the failure mechanism of the NiCrB diffusion barrier layer were investigated. The prepared samples were subjected to XRD, XPS, FPP and AFM to determine the phases, composition, sheet resistance and surface morphology of samples before and after annealing. The results of these analyses indicated that the failure temperature of the NiCrB barrier film was 900 °C and the failure mechanism led to crystallization and grain growth of the NiCrB barrier layer after high temperature annealing. It was found that this process caused Cu grains to reach Si substrate through the grain boundaries, and then the reaction between Cu and Si resulted in the formation of highly resistive Cu3Si.

  8. 与Si工艺兼容的Si/SiGe/Si HBT研究%The Study of Si/SiGe/Si HBT and Its Compatibility with Si Process

    Institute of Scientific and Technical Information of China (English)

    廖小平

    2001-01-01

    我们对Si/SiGe/Si HBT及其Si兼容工艺进行了研究,在研究了一些关键的单项工艺的基础上,提出了五个高速Si/SiGe/Si HBT结构和一个低噪声Si/SiGe/Si HBT结构,并已研制成功台面结构Si/SiGe/Si HBT和低噪声Si/SiGe/Si HBT,为进一步高指标的Si/SiGe/Si HBT的研究建立了基础.

  9. Enhancing endosomal escape for nanoparticle mediated siRNA delivery

    Science.gov (United States)

    Ma, Da

    2014-05-01

    Gene therapy with siRNA is a promising biotechnology to treat cancer and other diseases. To realize siRNA-based gene therapy, a safe and efficient delivery method is essential. Nanoparticle mediated siRNA delivery is of great importance to overcome biological barriers for systemic delivery in vivo. Based on recent discoveries, endosomal escape is a critical biological barrier to be overcome for siRNA delivery. This feature article focuses on endosomal escape strategies used for nanoparticle mediated siRNA delivery, including cationic polymers, pH sensitive polymers, calcium phosphate, and cell penetrating peptides. Work has been done to develop different endosomal escape strategies based on nanoparticle types, administration routes, and target organ/cell types. Also, enhancement of endosomal escape has been considered along with other aspects of siRNA delivery to ensure target specific accumulation, high cell uptake, and low toxicity. By enhancing endosomal escape and overcoming other biological barriers, great progress has been achieved in nanoparticle mediated siRNA delivery.

  10. Characterization of large area, thick, and segmented silicon detectors for neutron β-decay experiments

    Energy Technology Data Exchange (ETDEWEB)

    Salas-Bacci, A., E-mail: americo.salas.bacci.1@ohio.edu [University of Virginia, Charlottesville, VA 22904 (United States); Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); McGaughey, P.L. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Baeßler, S. [University of Virginia, Charlottesville, VA 22904 (United States); Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Broussard, L. [Duke University, Durham, NC 27708 (United States); Makela, M.F.; Mirabal, J. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Pattie, R.W. [North Carolina State University, Raleigh, North Carolina 27695 (United States); Počanić, D. [University of Virginia, Charlottesville, VA 22904 (United States); Sjue, S.K.L. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Penttila, S.I. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Wilburn, W.S. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Young, A.R.; Zeck, B.A. [North Carolina State University, Raleigh, North Carolina 27695 (United States); Wang, Z. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2014-01-21

    The “Nab” and “UCNB” collaborations have proposed to measure the correlation parameters in neutron β-decay at Oak Ridge and Los Alamos National Laboratory, using a novel detector design. Two large area, thick, hexagonal-segmented silicon detectors containing 127 pixels per detector will be used to detect the proton and electron from neutron decay. Both silicon detectors are connected by magnetic field lines of a few Tesla field strength, and set on an electrostatic potential, such that protons can be accelerated up to 30 keV in order to be detected. Characteristics of the detector response to low energy conversion electrons and protons from 15 keV to 35 keV, including the evaluation of the dead layer thickness and other contributions to the pulse height defect for proton detection are presented for Si detectors of 0.5 mm and 1 mm of thickness. -- Highlights: • We characterized large area (108 cm{sup 2}), thick (0.5, 1 mm), and 127-segmented Si detectors. • We detected low energy protons from 15 to 35 keV with these large area Si detectors. • The recombination defect is insignificant at E{sub p}<35keV, for appropriate bias voltages. • Our computed nuclear pulse height defect agrees with available experimental data. • Our detector dead layer is ≲110nm, as probed by low energy protons.

  11. Superconducting microstrip detectors Addendum to proposal DRDC-P-53

    CERN Document Server

    Borer, K; Palmieri, V G; Pretzl, Klaus P; Li, Z; Heijne, Erik H M; Lourenço, C; Niinikoski, T O; Ropotar, I; Sonderegger, P; Borchi, E; Bruzzi, Mara; Pirollo, S; Chapuy, S; Dimcovski, Zlatomir; Bell, W; Smith, K; Berglund, P; Koivuniemi, J H; Valtonen, M J; Mukhanov, O; de Boer, Wim; Grigoriev, E; Heising, S; Casagrande, L; Cindro, V; Mikuz, M; Zavrtanik, M; Da Vià, C; Konorov, I; Paul, S; Buontempo, S; D'Ambrosio, N; Granata, V; Pagano, S; Ruggiero, G; Takada, S; Esposito, A P; Salmi, J; Seppä, H; Suni, I; CERN. Geneva. Detector Research and Development Committee

    1999-01-01

    The recent advances in Si and diamond detector technology give hope of a simple solution to the radiation hardness problem for vertex trackers at the LHC. In particular, we have recently demonstrated that operating a heavily irradiated Si detector at liquid nitrogen (LN2) temperature results in significant recovery of Charge Collection Efficiency (CCE). Among other potential benefits of operation at cryogenic temperatures are the use of large low-resistivity wafers, simple processing, higher and faster electrical signal because of higher mobility and drift velocity of carriers, and lower noise of the readout circuit. A substantial reduction in sensor cost could result. Several CERN experiments are potential users of cold radiation hard tracking devices. The first goal of the proposed extension of the RD39 programme is to demonstrate that irradiation at low temperature in situ during operation does not affect the results obtained so far by cooling detectors which were irradiated at room temperature. In particu...

  12. A Scintillating Fiber Tracker With SiPM Readout

    CERN Document Server

    Yearwood, G Roper; Chung, Ch -H; Doetinchem, Ph v; Gast, H; Greim, R; Kirn, T; Schael, S; Zimmermann, N; Nakada, T; Ambrosi, G; Azzarello, P; Battiston, R; Piemonte, C

    2008-01-01

    We present a prototype for the first tracking detector consisting of 250 micron thin scintillating fibers and silicon photomultiplier (SiPM) arrays. The detector has a modular design, each module consists of a mechanical support structure of 10mm Rohacell foam between two 100 micron thin carbon fiber skins. Five layers of scintillating fibers are glued to both top and bottom of the support structure. SiPM arrays with a channel pitch of 250 micron are placed in front of the fibers. We show the results of the first module prototype using multiclad fibers of types Bicron BCF-20 and Kuraray SCSF-81M that were read out by novel 32-channel SiPM arrays from FBK-irst/INFN Perugia as well as 32-channel SiPM arrays produced by Hamamatsu. A spatial resolution of 88 micron +/- 6 micron at an average yield of 10 detected photons per minimal ionizig particle has been achieved.

  13. Effect of the new ASTM E 722-93 (Si) Kerma displacement data on reactor neutron dosimetry

    Science.gov (United States)

    Morin, J.; Arnoud, J. C.; David, J.; Zyromski, P.

    1998-02-01

    Studies on hardening performed with PROSPERO and CALIBAN reactors require dosimetry in order to measure the 1 MeV (Si) equivalent neutron fluence, either with activation detectors, or with PIN (Si) diodes. Taking into account the latest ASTM E 722-93 (Si) Kerma displacement data enhances the accuracy and consistency of the results.

  14. Effect of the new ASTM E 722-93 (Si) Kerma displacement data on reactor neutron dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Morin, J.; Arnoud, J.C.; David, J.; Zyromski, P. [CEA Centre d`Etudes de Valduc, 21 - Is-sur-Tille (France)

    1998-01-01

    Studies on hardening performed with PROSPERO and CALIBAN reactors require dosimetry in order to measure the 1 MeV (Si) equivalent neutron fluence, either with activation detectors, or with PIN (Si) diodes. Taking into account the latest ASTM E 722-93 (Si) Kerma displacement data enhances the accuracy and consistency of the results. (orig.). 8 refs.

  15. The in-beam tracking detectors for R3B

    Energy Technology Data Exchange (ETDEWEB)

    Paschalis, Stefanos; Johansen, Jacob; Scheit, Heiko [Institut fuer Kernphysik, Technische Universitaet, D 64289 Darmstadt (Germany); Heil, Michael [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, D-64291 Darmstadt (Germany); Aumann, Thomas [Institut fuer Kernphysik, Technische Universitaet, D 64289 Darmstadt (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, D-64291 Darmstadt (Germany); Krivshich, Anatoly [PNPI St. Petersburg, 188300 Gatchina (Russian Federation); Collaboration: R3B-Collaboration

    2015-07-01

    The R3B experiment is part of the NUSTAR pillar at FAIR. One of the great strengths of the R3B experiment is the kinematically complete measurement of reactions with exotic ions with energies of up to 1 AGeV. Key components of the R3B experiment are the neutron detector NeuLAND, the γ and charge-particle calorimeter CALIFA, the Si Tracker and the in-beam tracking detectors. A cornerstone instrument of the setup is the new dipole magnet (GLAD) which bends and momentum analyses the high-rigidity beams. A precise tracking of the charged particles through the magnetic field is crucial to resolve the masses of heavy ions and measure the momentum of the fragments with high resolution. In this contribution we present the technical design details of the in-beam tracking detectors that will be used in the R3B experiment together with recent results obtained from in-beam prototype testing. In particular, we discuss Si detectors, detectors based on plastic-scintillator fibers and paddles, straw-tube gas detectors and the overall performance of the system.

  16. The HERMES recoil detector

    Energy Technology Data Exchange (ETDEWEB)

    Airapetian, A. [Giessen Univ. (Germany). Physikalisches Inst.; Michigan Univ., Ann Arbor, MI (United States). Randall Laboratory of Physics; Aschenauer, E.C. [DESY, Zeuthen (Germany); Belostotski, S. [B.P. Konstantinov Petersburg Nuclear Physics Insitute, Gatchina (Russian Federation)] [and others; Collaboration: HERMES Recoil Detector Group

    2013-02-15

    For the final running period of HERA, a recoil detector was installed at the HERMES experiment to improve measurements of hard exclusive processes in charged-lepton nucleon scattering. Here, deeply virtual Compton scattering is of particular interest as this process provides constraints on generalised parton distributions that give access to the total angular momenta of quarks within the nucleon. The HERMES recoil detector was designed to improve the selection of exclusive events by a direct measurement of the four-momentum of the recoiling particle. It consisted of three components: two layers of double-sided silicon strip sensors inside the HERA beam vacuum, a two-barrel scintillating fibre tracker, and a photon detector. All sub-detectors were located inside a solenoidal magnetic field with an integrated field strength of 1Tm. The recoil detector was installed in late 2005. After the commissioning of all components was finished in September 2006, it operated stably until the end of data taking at HERA end of June 2007. The present paper gives a brief overview of the physics processes of interest and the general detector design. The recoil detector components, their calibration, the momentum reconstruction of charged particles, and the event selection are described in detail. The paper closes with a summary of the performance of the detection system.

  17. ATLAS Detector Interface Group

    CERN Multimedia

    Mapelli, L

    Originally organised as a sub-system in the DAQ/EF-1 Prototype Project, the Detector Interface Group (DIG) was an information exchange channel between the Detector systems and the Data Acquisition to provide critical detector information for prototype design and detector integration. After the reorganisation of the Trigger/DAQ Project and of Technical Coordination, the necessity to provide an adequate context for integration of detectors with the Trigger and DAQ lead to organisation of the DIG as one of the activities of Technical Coordination. Such an organisation emphasises the ATLAS wide coordination of the Trigger and DAQ exploitation aspects, which go beyond the domain of the Trigger/DAQ project itself. As part of Technical Coordination, the DIG provides the natural environment for the common work of Trigger/DAQ and detector experts. A DIG forum for a wide discussion of all the detector and Trigger/DAQ integration issues. A more restricted DIG group for the practical organisation and implementation o...

  18. Detectors for Tomorrow's Instruments

    Science.gov (United States)

    Moseley, Harvey

    2009-01-01

    Cryogenically cooled superconducting detectors have become essential tools for a wide range of measurement applications, ranging from quantum limited heterodyne detection in the millimeter range to direct searches for dark matter with superconducting phonon detectors operating at 20 mK. Superconducting detectors have several fundamental and practical advantages which have resulted in their rapid adoption by experimenters. Their excellent performance arises in part from reductions in noise resulting from their low operating temperatures, but unique superconducting properties provide a wide range of mechanisms for detection. For example, the steep dependence of resistance with temperature on the superconductor/normal transition provides a sensitive thermometer for calorimetric and bolometric applications. Parametric changes in the properties of superconducting resonators provides a mechanism for high sensitivity detection of submillimeter photons. From a practical point of view, the use of superconducting detectors has grown rapidly because many of these devices couple well to SQUID amplifiers, which are easily integrated with the detectors. These SQUID-based amplifiers and multiplexers have matured with the detectors; they are convenient to use, and have excellent noise performance. The first generation of fully integrated large scale superconducting detection systems are now being deployed. I will discuss the prospects for a new generation of instruments designed to take full advantage of the revolution in detector technology.

  19. A linear monolithic 4-6 on silicon IR detector array

    Science.gov (United States)

    Vandamme, J.; Vermeiren, J.; Zogg, H.; Masek, J.; Fabbricotti, M.

    1992-12-01

    A linear array of monolithically grown PbTe and PbSnSe detectors on (111)-Si for MWIR and TIR imaging applications was designed and processed. The array consists of a staggered row of 2 by 128 detectors on a 100 micrometers pitch. The readout circuitry, integrated on the Si substrate consists of a COS multiplexer with a direct injection input stage, a charge reduction stage and charge to voltage conversion stage for each individual detector. This XDI (MultipeXed Direct Injection) circuit also allows for on-chip nonuniformity compensation with a switched capacitor network.

  20. Development of superconducting tunnel junction radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Katagiri, Masaki; Kishimoto, Maki; Ukibe, Masahiro; Nakamura, Tatsuya; Nakazawa, Masaharu [Japan Atomic Energy Research Inst., Tokyo (Japan); Kurakado, Masahiko; Ishibashi, Kenji; Maehata, Keisuke

    1998-07-01

    Study on development of high energy resolution X-ray detector using superconducting tunnel junction (STJ) for radiation detection was conducted for 5 years under cooperation of University of Tokyo group and Kyushu University group by Quantum measurement research group of Advanced fundamental research center of JAERI. As the energy resolution of STJ could be obtained better results than that of Si semiconductor detector told to be actually best at present, this study aimed to actualize an X-ray detector usable for the experimental field and to elucidate radiation detection mechanism due to STJ. The STJ element used for this study was the one developed by Kurakado group of Nippon Steel Corp. As a results, some technical problems were almost resolved, which made some trouble when using the STJ element to detection element of X-ray spectrometer. In order to make the X-ray detector better, it is essential to manufacture a STJ element and develop serial junction type STJ element on the base of optimization of the element structure and selection and single crystallization of new superconducting materials such as Ta and others, activating the research results. (G.K.)