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Sample records for barrier si detector

  1. Barrier Infrared Detector (BIRD)

    Data.gov (United States)

    National Aeronautics and Space Administration — A recent breakthrough in MWIR detector design, has resulted in a high operating temperature (HOT) barrier infrared detector (BIRD) that is capable of spectral...

  2. A problem finding in calibration of Si(Au) surface-barrier semiconductor detector and a simple resolved method

    International Nuclear Information System (INIS)

    Song Zhangyong; Ruan Fangfang; Lu Rongchun; Chinese Academy of Sccience, Beijing; Yang Zhihu; Tan Jilian; Shao Caojie; Cai Xiaohong; Zhang Hongqiang; Shao Jianxiong; Cui Ying; Xie Jiangshan; Gao Zhimin

    2007-01-01

    In calibration of Si(Au) surface-barrier semiconductor detector, we find the peak-channel of 241 Am standard radioactive source shift with the position and the size of incident window. The reason may be result from the non-uniformity of Au-layer plated on Si-layer, because it may increase the probability of electron-vacancy pair recombination, but the exact reason is not clear. Dut to this problem is disadvantage to heavy ion-atom impact experiment; we resolve it by fixing up the position and the size of incident window and calibrating two sets of spectrometers, which placed symmetrically in the target room. Thus, this two set of apparatus can measure the back-scattered ions simultaneously in ion-atom impact experiment. We could obtain reliable experimental results by comparing with the two back-scattering spectra. (authors)

  3. Detectors for proton counting. Si-APD and scintillation detectors

    International Nuclear Information System (INIS)

    Kishimoto, Shunji

    2008-01-01

    Increased intensity of synchrotron radiation requests users to prepare photon pulse detectors having higher counting rates. As detectors for photon counting, silicon-avalanche photodiode (Si-APD) and scintillation detectors were chosen for the fifth series of detectors. Principle of photon detection by pulse and need of amplification function of the detector were described. Structure and working principle, high counting rate measurement system, bunch of electrons vs. counting rate, application example of NMR time spectroscopy measurement and comments for users were described for the Si-APD detector. Structure of scintillator and photomultiplier tube, characteristics of scintillator and performance of detector were shown for the NaI detector. Future development of photon pulse detectors was discussed. (T. Tanaka)

  4. Surface barrier silicon detectors with a large active area

    International Nuclear Information System (INIS)

    Kim, Y.; Husimi, K.; Ikeda, Y.; Kim, C.; Ohkawa, S.; Sakai, T.

    1985-01-01

    Surface barrier silicon detectors with a large active area have been produced by using high resistive n-type silicon crystals, diameters of which are 3 to 5 inches. High quality detectors with a low leakage current and a low noise were achieved by developing the improved surface treatment. Characteristics of detectors obtained are good in energy resolution compared with conventional large area Si(Li) detectors. It has also been confirmed that local dead region is not found from measuring results of photo-pulse injection

  5. Application of pulse shape discrimination in Si detector for fission ...

    Indian Academy of Sciences (India)

    Pulse shape discrimination (PSD) with totally depleted transmission type Si surface barrier detector in reverse mount has been investigated to identify fission fragments in the presence of elastic background in heavy ion-induced fission reactions by both numerical simulation and experimental studies. The PSD method is ...

  6. Si(Li) X-ray detector

    International Nuclear Information System (INIS)

    Yuan Xianglin; Li Zhiyong; Hong Xiuse

    1990-08-01

    The fabrication technology of the 10∼80 mm 2 Si(Li) X-ray detectors are described and some problems concerning technology and measurement are discussed. The specifications of the detectors are shown as well. The Si(Li) X-ray detector is a kind of low energy X-ray detectors. Owing to very high energy resolution, fine linearity and high detection efficiency in the range of low energy X-rays, it is widely used in the fields of nuclear physics, medicine, geology and environmental protection, etc,. It is also a kernel component for the scanning electron microscope and X-ray fluorescence analysis systems

  7. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  8. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  9. Entrance window structure of a Si(Li) detector

    International Nuclear Information System (INIS)

    Kalinka, G.

    1994-01-01

    The response function of a Si(Li) detector with a 45 μm thick decompensated front p-Si layer, in order to enhance window effects, has been measured in the 1.2-6 keV X-ray energy region as a function of the so-called photo dead layer thickness in the 14-0.4 μm range by varying the detector bias between 200 and 1000 V. From measured spectrum component (photopeak, tail, shelf, escape and SiK line) intensity data, discrete regions responsible for particular spectrum components have been identified: (i) the Au surface barrier, in addition to characteristic X-rays, contributes only to the shelf, adjacent to it is located (ii) an ''absolute'' Si dead layer, which exists only in the undepleted p-region case, and produces no events except for the internal SiK fluorescence, followed by (iii) an incomplete charge collection region, divided into shelf and tail subregions, beyond which (iv) there is the detector sensitive volume with complete charge collection, resulting in photo- and escape peaks, and a bulk shelf component as well. A model has also been developed for the explanation of the observed dead layer thickness dependence of escape- and SiK line intensity. ((orig.))

  10. A surface barrier detector for simultaneous detection of α and β particles

    International Nuclear Information System (INIS)

    Shiraishi, Fumio

    1981-01-01

    Semiconductor detectors are indispensable as the solid detectors with high energy resolution. Ge detectors are used for gamma-ray spectroscopy and its applied fields, while Si detectors are used as the detectors for charged particles such as α and β rays and low energy X-ray. In this paper, it is reported that the Si detector developed in the author's laboratory is suitable to monitor very weak radioactivity. The Si detector is a rectifier, but in order to capture radiation, it has large area and increased thickness, and a window is provided for incident charged particles. The Si detectors are classified into three types according to the manufacturing methods, namely surface barrier type, PN joint type and Li drift type. The Si detector introduced here is of surface barrier type, but it is characterized by the use of P-type Si with superhigh purity. The method of manufacturing this detector, its specifications and characteristics are described. Because of the surface barrier type, it can be produced simply in short time, and the yield of products is good. The stability is good, and the sensitivity is high, accordingly very weak radioactivity can be measured. As the examples of measurements, the results of uranium ore and fertilizer on the market are compared. Also the utilization as surface contamination meters is explained. (Kako, I.)

  11. Electronics for the Si detectors in APEX

    International Nuclear Information System (INIS)

    Wilt, P.R.; Betts, R.R.; Freer, M.

    1994-01-01

    APEX (ATLAS Positron EXperiment), a collaborative effort of ANL, FSU, MSU/NSCL, Princeton, Queen's, Rochester, Washington and Yale, is an experiment to study positron and electron production in very heavy ion collisions. The electrons and positrons are detected with two detector arrays, each consisting of 216 1 mm thick Si PIN diodes, and their energy and time-of-flight are measured. The number of detectors and limited space made it necessary to develop a system that could efficiently process and transfer signals from the detectors to the charge sensing ADC's and data readout electronics as well as monitor the condition of the detectors. The discussion will cover the electronics designed for the Si detectors, including the charge amplifier, ''Mother board'' for the charge amplifiers, 8 channel Shaper, 16 channel Constant Fraction Discriminator (CFD), 16 channel Peak-to-FERA (PTF) and the integration of the CFD and PTF with Charge sensing ADC's. Function and performance of the individual modules as well as the system as a whole will be discussed

  12. Development of Si (Li) detectors for charged particles spectrometer

    CERN Document Server

    Onabe, H; Obinata, M; Kashiwagi, T

    2002-01-01

    Lithium drifted silicon (Si (Li)) detectors with high-quality large area for charged particles spectrometer abroad artificial satellite have been developed. Surface stability can be obtained by thin p-n junction fabricated with the applied photo engraving process (PEP) instead of surface barrier. The region compensated with Lithium can be improved by the adequate heat treatment, and this improvement can be monitored by means of a combination of copper plating and subsequent micro-XRF analysis. The detectors fabricated from the thermal treated wafers were found to have better energy resolution both for alpha-particles from sup 2 sup 4 sup 1 Am and conversion electrons from sup 2 sup 0 sup 7 Bi. (author)

  13. Impact of radiation on breakdown performance of Si strip detectors

    CERN Document Server

    Bhardwaj, A; Chatterji, S; Ranjan, Kirti; Shivpuri, E K; Srivastava-Ajay, K

    2002-01-01

    The very intense radiation environment of high luminosity future colliding beam experiments, like Large Hadron Collider (LHC etc.) makes radiation hardness the most urgent demand for Si detectors. The radiation hardness of Si strip detectors especially developed for LHC experiment was investigated with respect to ionizing and nonionizing radiation using computer simulations. (10 refs).

  14. HgCdTe photovoltaic detectors on Si substrates

    International Nuclear Information System (INIS)

    Zanio, K.R.; Bean, R.C.

    1988-01-01

    HgCdTe photovoltaic detectors have been fabricated on Si substrates through intermediate CdTe/GaAs layers. Encapsulation of the GaAs between the CdTe and Si prevents unintentional doping of the HgCdTe by Ga and As. Uniform epitaxial GaAs is grown on three inch diameter Si substrates. Detectors on such large area Si substrates will offer hybrid focal plane arrays whose dimensions are not limited by the difference between the coefficients of thermal expansion of the Si signal processor and the substrate for the HgCdTe detector array. The growth of HgCdTe detectors on the Si signal processors for monolithic focal plane arrays is also considered. 40 references

  15. Beta dosimetry with surface barrier detectors

    International Nuclear Information System (INIS)

    Heinzelmann, M.F.M.; Schuren, H.; Dreesen, K.

    1980-01-01

    A small dosimeter to measure the dose rate due to β-radiation in an energy independent fashion is described in detail. A surface barrier semi-conductor detector is used whose thickness of sensitive layer is changed by varying the detector voltage. The integral count rate can then be determined as a function of applied voltage and discrimination thresholds. The integral count rate can be related to β dose rate in an energy independent fashion only for a time constant of 0.25 μs. However, the use of a single channel analyzer permits an energy-independent determination of the β-dose rate with 0.25 or 0.5 μs time constants. The sensitivity of the device as a function of dose rate is investigation up to 600 rad/hr. Furthermore, the sensitivity of the device at a constant dose rate was shown to be uniform up to a dose of 50,000 rads. (UK)

  16. Silicon surface barrier detectors used for liquid hydrogen density measurement

    Science.gov (United States)

    James, D. T.; Milam, J. K.; Winslett, H. B.

    1968-01-01

    Multichannel system employing a radioisotope radiation source, strontium-90, radiation detector, and a silicon surface barrier detector, measures the local density of liquid hydrogen at various levels in a storage tank. The instrument contains electronic equipment for collecting the density information, and a data handling system for processing this information.

  17. Breakdown of coupling dielectrics for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

    1999-01-01

    Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

  18. Fabrication and characterization of fully depleted surface barrier detectors

    International Nuclear Information System (INIS)

    Ray, A.

    2010-01-01

    Fabrication of fully depleted surface barrier type thin detectors needs thin silicon wafer of 20 - 30 μm thickness and flatness of ± 1 μm. Process has been developed for thinning silicon wafers to achieve thickness up to 20 - 30 μm from thicker (0.5 - 0.8 mm) silicon samples. These samples were used to fabricate fully depleted surface barrier detectors using Au contacts on n-type silicon. The detectors were characterized by measuring forward and reverse I-V characteristics and alpha energy spectra of Am-Pu source. (author)

  19. Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

    Science.gov (United States)

    Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

    2018-03-01

    Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (0.995) with a response time of PEDOT:PSS/n-Si heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

  20. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

    Science.gov (United States)

    Li, Zheng; Chen, Wei

    2016-07-05

    A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

  1. High Operating Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

    Science.gov (United States)

    Ting, David Z. (Inventor); Hill, Cory J. (Inventor); Seibel, Alexander (Inventor); Bandara, Sumith Y. (Inventor); Gunapala, Sarath D. (Inventor)

    2015-01-01

    A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.

  2. Charged particle discrimination with silicon surface barrier detectors

    International Nuclear Information System (INIS)

    Coote, G.E.; Pithie, J.; Vickridge, I.C.

    1996-01-01

    The application for materials analysis of nuclear reactions that give rise to charged particles is a powerful surface analytical and concentration depth profiling technique. Spectra of charged particles, with energies in the range 0.1 to 15 MeV, emitted from materials irradiated with beams of light nuclei such as deuterons are measured with silicon surface barrier detectors. The spectra from multi-elemental materials typically encountered in materials research are usually composed of an overlapping superposition of proton, alpha, and other charged particle spectra. Interpretation of such complex spectra would be simplified if a means were available to electronically discriminate between the detector response to the different kinds of charged particle. We have investigated two methods of discriminating between different types of charged particles. The fast charge pulses from a surface barrier detector have different shapes, depending on the spatial distribution of energy deposition of the incident particle. Fast digitisation of the pulses, followed by digital signal processing provides one avenue for discrimination. A second approach is to use a thin transmission detector in front of a thick detector as a detector telescope. For a given incident energy, different types of charged particles will lose different amounts of energy in the thin detector, providing an alternative means of discrimination. We show that both approaches can provide significant simplification in the interpretation of charged particle spectra in practical situations, and suggest that silicon surface barrier detectors having graded electronic properties could provide improved discrimination compared to the current generation of detectors having homogeneous electronic properties. (author).12 refs., 2 tabs., 28 figs

  3. Complementary Barrier Infrared Detector (CBIRD) with Double Tunnel Junction Contact and Quantum Dot Barrier Infrared Detector (QD-BIRD)

    Science.gov (United States)

    Ting, David Z.-Y; Soibel, Alexander; Khoshakhlagh, Arezou; Keo, Sam A.; Nguyen, Jean; Hoglund, Linda; Mumolo, Jason M.; Liu, John K.; Rafol, Sir B.; Hill, Cory J.; hide

    2012-01-01

    The InAs/GaSb type-II superlattice based complementary barrier infrared detector (CBIRD) has already demonstrated very good performance in long-wavelength infrared (LWIR) detection. In this work, we describe results on a modified CBIRD device that incorporates a double tunnel junction contact designed for robust device and focal plane array processing. The new device also exhibited reduced turn-on voltage. We also report results on the quantum dot barrier infrared detector (QD-BIRD). By incorporating self-assembled InSb quantum dots into the InAsSb absorber of the standard nBn detector structure, the QD-BIRD extend the detector cutoff wavelength from approximately 4.2 micrometers to 6 micrometers, allowing the coverage of the mid-wavelength infrared (MWIR) transmission window. The device has been observed to show infrared response at 225 K.

  4. Imaging with SiPMs in noble-gas detectors

    International Nuclear Information System (INIS)

    Yahlali, N; González, K; Fernandes, L M P; Garcia, A N C; Soriano, A

    2013-01-01

    Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive photosensors for imaging. However they are insensitive to the VUV scintillation emitted by the noble gases (xenon and argon). This difficulty is overcome in the NEXT experiment by coating the SiPMs with tetraphenyl butadiene (TPB) to convert the VUV light into visible light. TPB requires stringent storage and operational conditions to prevent its degradation by environmental agents. The development of UV sensitive SiPMs is thus of utmost interest for experiments using electroluminescence of noble-gas detectors. It is in particular an important issue for a robust and background free ββ0ν experiment with xenon gas aimed by NEXT. The photon detection efficiency (PDE) of UV-enhanced SiPMs provided by Hamamatsu was determined for light in the range 250–500 nm. The PDE of standard SiPMs of the same model (S10362-33-50C), coated and non-coated with TPB, was also determined for comparison. In the UV range 250–350 nm, the PDE of the standard SiPM is shown to decrease strongly, down to about 3%. The UV-enhanced SiPM without window is shown to have the maximum PDE of 44% at 325 nm and 30% at 250 nm. The PDE of the UV-enhanced SiPM with silicon resin window has a similar trend in the UV range, although it is about 30% lower. The TPB-coated SiPM has shown to have about 6 times higher PDE than the non-coated SiPM in the range 250–315 nm. This is however below the performance of the UV-enhanced prototypes in the same wavelength range. Imaging in noble-gas detectors using UV-enhanced SiPMs is discussed.

  5. Advanced Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: NASA's Perspectives

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    This presentation reviews NASA environmental barrier coating (EBC) system development programs and the coating materials evolutions for protecting the SiC/SiC Ceramic Matrix Composites in order to meet the next generation engine performance requirements. The presentation focuses on several generations of NASA EBC systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. The current EBC development emphasis is placed on advanced NASA 2700F candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance are described. The research and development opportunities for advanced turbine airfoil environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling are discussed.

  6. Development and Production of Array Barrier Detectors at SCD

    Science.gov (United States)

    Klipstein, P. C.; Avnon, E.; Benny, Y.; Berkowicz, E.; Cohen, Y.; Dobromislin, R.; Fraenkel, R.; Gershon, G.; Glozman, A.; Hojman, E.; Ilan, E.; Karni, Y.; Klin, O.; Kodriano, Y.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nevo, I.; Nitzani, M.; Pivnik, I.; Rappaport, N.; Rosenberg, O.; Shtrichman, I.; Shkedy, L.; Snapi, N.; Talmor, R.; Tessler, R.; Weiss, E.; Tuito, A.

    2017-09-01

    XB n or XB p barrier detectors exhibit diffusion-limited dark currents comparable with mercury cadmium telluride Rule-07 and high quantum efficiencies. In 2011, SemiConductor Devices (SCD) introduced "HOT Pelican D", a 640 × 512/15- μm pitch InAsSb/AlSbAs XB n mid-wave infrared (MWIR) detector with a 4.2- μm cut-off and an operating temperature of ˜150 K. Its low power (˜3 W), high pixel operability (>99.5%) and long mean time to failure make HOT Pelican D a highly reliable integrated detector-cooler product with a low size, weight and power. More recently, "HOT Hercules" was launched with a 1280 × 1024/15- μm format and similar advantages. A 3-megapixel, 10- μm pitch version ("HOT Blackbird") is currently completing development. For long-wave infrared applications, SCD's 640 × 512/15- μm pitch "Pelican-D LW" XB p type II superlattice (T2SL) detector has a ˜9.3- μm cut-off wavelength. The detector contains InAs/GaSb and InAs/AlSb T2SLs, and is fabricated into focal plane array (FPA) detectors using standard production processes including hybridization to a digital silicon read-out integrated circuit (ROIC), glue underfill and substrate thinning. The ROIC has been designed so that the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector family. The Pelican-D LW FPA has a quantum efficiency of ˜50%, and operates at 77 K with a pixel operability of >99% and noise equivalent temperature difference of 13 mK at 30 Hz and F/2.7.

  7. Response function of semiconductor detectors, Ge and Si(Li)

    International Nuclear Information System (INIS)

    Zevallos Chavez, Juan Yury

    2003-01-01

    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm 3 , 50 cm 3 , 8 cm 3 and 5 cm 3 , and one Si(Li) with 0.143 cm 3 of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  8. Response function of semiconductor detectors, Ge and Si(Li); Funcao resposta de detectores semicondutores, Ge e Si(Li)

    Energy Technology Data Exchange (ETDEWEB)

    Zevallos Chavez, Juan Yury

    2003-07-01

    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm{sup 3} , 50 cm{sup 3} , 8 cm{sup 3} and 5 cm{sup 3}, and one Si(Li) with 0.143 cm{sup 3} of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  9. Field profile tailoring in a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Quershi, S.; Wildermuth, D.; Street, R.A.

    1990-03-01

    The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs

  10. Radiation damage studies of detector-compatible Si JFETs

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, Gian-Franco [INFN, Sezione di Padova (Gruppo Collegato di Trento), and Dipartimento di Informatica e Telecomunicazioni, Universita di Trento, Via Sommarive, 14, I-38050 Povo di Trento (Italy)]. E-mail: dallabe@dit.unitn.it; Boscardin, Maurizio [ITC-irst, Divisione Microsistemi, I-38050 Povo di Trento, Via Sommarive, 18, 38050 Povo di Trento (Italy); Candelori, Andrea [INFN, Sezione di Padova, Via Marzolo, 8, I-35131 Padova (Italy); Pancheri, Lucio [INFN, Sezione di Padova (Gruppo Collegato di Trento), and Dipartimento di Informatica e Telecomunicazioni, Universita di Trento, Via Sommarive, 14, I-38050 Povo di Trento (Italy); Piemonte, Claudio [ITC-irst, Divisione Microsistemi, I-38050 Povo di Trento, Via Sommarive, 18, 38050 Povo di Trento (Italy); Ratti, Lodovico [INFN, Sezione di Pavia, and Dipartimento di Elettronica, Universita di Pavia, Via Ferrata 1, I-27100 Pavia (Italy); Zorzi, Nicola [ITC-irst, Divisione Microsistemi, I-38050 Povo di Trento, Via Sommarive, 18, 38050 Povo di Trento (Italy)

    2007-03-01

    We have largely improved the performance of our detector-compatible Si JFETs by optimizing the fabrication technology. New devices feature thermal noise values close to the theoretical ones, and remarkably low 1/f noise figures. In view of adopting these JFETs for X-ray imaging and HEP applications, bulk and surface radiation damage tests have been carried out by irradiating single transistors and test structures with neutrons and X-rays. Selected results from static and noise characterization of irradiated devices are discussed in this paper, and the impact of radiation effects on the performance of JFET-based circuits is addressed.

  11. Radiation damage studies of detector-compatible Si JFETs

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Boscardin, Maurizio; Candelori, Andrea; Pancheri, Lucio; Piemonte, Claudio; Ratti, Lodovico; Zorzi, Nicola

    2007-01-01

    We have largely improved the performance of our detector-compatible Si JFETs by optimizing the fabrication technology. New devices feature thermal noise values close to the theoretical ones, and remarkably low 1/f noise figures. In view of adopting these JFETs for X-ray imaging and HEP applications, bulk and surface radiation damage tests have been carried out by irradiating single transistors and test structures with neutrons and X-rays. Selected results from static and noise characterization of irradiated devices are discussed in this paper, and the impact of radiation effects on the performance of JFET-based circuits is addressed

  12. Performance and Durability of Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan; Bhatt, Ramakrishna

    2016-01-01

    This presentation highlights advanced environmental barrier coating (EBC) and SiC-SiC Ceramic Matrix Composites (CMC) systems for next generation turbine engines. The emphasis will be placed on fundamental coating and CMC property evaluations; and the integrated system performance and degradation mechanisms in simulated laboratory turbine engine testing environments. Long term durability tests in laser rig simulated high heat flux the rmomechanical creep and fatigue loading conditions will also be presented. The results can help improve the future EBC-CMC system designs, validating the advanced EBC-CMC technologies for hot section turbine engine applications.

  13. Pulse processing CMOS ASIC for Si-strip/PIN detectors

    International Nuclear Information System (INIS)

    Chandratre, V.B.; Sardesai, S.V.; Kataria, S.K.

    2004-01-01

    The paper presents the design of an 8-channel front-end signal processing ASIC for Si-strip detectors with capacitance from 1 to 40 pf. Each channel consists of a charge amplifier, a shaper amplifier (CR-RC 3 ) and a track-hold stage. The channel outputs are connected to an analog multiplexer which is controlled by an external clock for serial readout. The peaking time is adjustable over 500 ns-1.2us in steps by external control. There is provision for changing gain and polarity. The circuit has a power dissipation of 16 mw per channel and is designed to fabricate in 1.2 um CMOS technology. The 0pf noise is ∼400e. The chip has an area of 5 by 5 mm with target package 48 pin CLCC. (author)

  14. Advanced Environmental Barrier Coating Development for SiC-SiC Ceramic Matrix Composite Components

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan; Hurst, Janet B.; Halbig, Michael Charles; Puleo, Bernadette J.; Costa, Gustavo; Mccue, Terry R.

    2017-01-01

    This presentation reviews the NASA advanced environmental barrier coating (EBC) system development for SiC-SiC Ceramic Matrix Composite (CMC) combustors particularly under the NASA Environmentally Responsible Aviation, Fundamental Aeronautics and Transformative Aeronautics Concepts Programs. The emphases have been placed on the current design challenges of the 2700-3000F capable environmental barrier coatings for low NOX emission combustors for next generation turbine engines by using advanced plasma spray based processes, and the coating processing and integration with SiC-SiC CMCs and component systems. The developments also have included candidate coating composition system designs, degradation mechanisms, performance evaluation and down-selects; the processing optimizations using TriplexPro Air Plasma Spray Low Pressure Plasma Spray (LPPS), Plasma Spray Physical Vapor Deposition and demonstration of EBC-CMC systems. This presentation also highlights the EBC-CMC system temperature capability and durability improvements under the NASA development programs, as demonstrated in the simulated engine high heat flux, combustion environments, in conjunction with high heat flux, mechanical creep and fatigue loading testing conditions.

  15. On the suitability of Peltier cooled Si-PIN detectors in transmission experiments

    International Nuclear Information System (INIS)

    Murty, V.R.K.; Devan, K.R.S.

    2001-01-01

    The performance of a Peltier cooled Si-PIN detector is compared with that for a Freolectric cooled Si(Li) detector, references being made to transmission experiments that evaluate total cross sections at low photon energies. The results of these measurements are discussed. (author)

  16. Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes

    Science.gov (United States)

    Vigneshwara Raja, P.; Narasimha Murty, N. V. L.

    2018-04-01

    Deep level defects in 4H-SiC Schottky barrier diodes (SBDs) fabricated on n-type epitaxial 4H-SiC have been identified by thermally stimulated capacitance (TSCAP) spectroscopy prior to and after 60Co-gamma irradiation. The TSCAP measurements on the non-irradiated SBDs reveal two electron traps at Ec-0.63 eV (˜250 K) and Ec-1.13 eV (˜525 K), whereas only one trap at Ec-0.63 eV is identified by conventional thermally stimulated current (TSC) measurements. Hence, TSCAP spectroscopy is more effective in identifying deep level defects in epitaxial 4 H-SiC SBDs as compared to the TSC spectroscopy. Upon exposure to 60Co-gamma rays up to a dose of 100 Mrad, significant changes in the concentration of the traps at Ec-0.63 eV, Ec-1.13 eV, and one new trap at Ec-0.89 eV (˜420 K) are observed. The electrical characteristics of the SBDs are considerably changed after gamma irradiation. The dominant mechanisms responsible for the irradiation induced changes in the SBD electrical characteristics are analyzed by incorporating the trap signatures in the commercial Silvaco® TCAD device simulator. The extracted trap parameters of the irradiated SBDs may be helpful in predicting the survival of 4H-SiC SBD detectors at higher irradiation levels.

  17. On the suitability of P Si-PIN detectors in transmission experiments

    International Nuclear Information System (INIS)

    Murty, V.R.K.; Devan, K.R.S.

    2000-01-01

    There has been considerable interest, in the recent past, in the development of detector technology. In this context, new detectors, especially room temperature operated detectors and inexpensive cooling systems have recently entered the market. These new systems replace the old systems where there are inadequate facilities to operate them to achieve superior performance. Such performance capabilities of different systems, on a comparative basis have not been widely published in the recent past. In this direction, the Peltier cooled detectors have entered the market and are replacing the conventional Si(Li) detectors. In between the conventional Si(Li) detectors and Peltier cooled Si-PIN detectors, the freolectric cooled Si(Li) detectors were also used in Radiation Physics applications. In this paper, the performance of the Peltier cooled Si-PIN detector in comparison with a Freolectric cooled Si(Li) detector has been studied in Transmission experiments to evaluate the total cross sections at low energies and the results are discussed. (author)

  18. Fast SiPM Readout of the PANDA TOF Detector

    Science.gov (United States)

    Böhm, M.; Lehmann, A.; Motz, S.; Uhlig, F.

    2016-05-01

    For the identification of low momentum charged particles and for event timing purposes a barrel Time-of-Flight (TOF) detector surrounding the interaction point is planned for the PANDA experiment at FAIR . Since the boundary conditions in terms of available radial space and radiation length are quite strict the favored layout is a hodoscope composed of several thousand small scintillating tiles (SciTils) read out by silicon photomultipliers (SiPMs). A time resolution of well below 100 ps is aimed for. With the originally proposed 30 × 30 × 5 mm3 SciTils read out by two single 3 × 3 mm2 SiPMs at the rims of the scintillator the targeted time resolution can be just reached, but with a considerable position dependence across the scintillator surface. In this paper we discuss other design options to further improve the time resolution and its homogeneity. It will be shown that wide scintillating rods (SciRods) with a size of, e.g., 50 × 30 × 5 mm3 or longer and read out at opposite sides by a chain of four serially connected SiPMs a time resolution down to 50 ps can be reached without problems. In addition, the position dependence of the time resolution is negligible. These SciRods were tested in the laboratory with electrons of a 90Sr source and under real experimental conditions in a particle beam at CERN. The measured time resolutions using fast BC418 or BC420 plastic scintillators wrapped in aluminum foil were consistently between 45 and 75 ps dependent on the SciRod design. This is a significant improvement compared to the original SciTil layout.

  19. POSSuMUS: a position sensitive scintillating muon SiPM detector

    CERN Document Server

    Ruschke, Alexander

    The development of a modular designed large scale scintillation detector with a two-dimensional position sensitivity is presented in this thesis. This novel POsition Sensitive Scintillating MUon SiPM Detector is named POSSuMUS. The POSSuMUS detector is capable to determine the particle’s position in two space dimensions with a fast trigger capability. Each module is constructed from two trapezoidal shaped plastic scintillators to form one rectangular shaped detector module. Both trapezoids are optically insulated against each other. In both trapezoids the scintillation light is collected by plastic fibers and guided towards silicon photomultipliers (SiPMs). SiPMs are light sensors which are capable to detect even smallest amounts of light. By combining several detector modules, position sensitive areas from 100 cm2 to few m2 are achievable with few readout channels. Therefore, POSSuMUS provides a cost effective detector concept. The position sensitivity along the trapezoidal geometry of one detector module ...

  20. Gamma detection: an unusual application for surface barrier detectors

    International Nuclear Information System (INIS)

    Fichtenbaum de Iacub, Silvana; Matatagui, Emilio

    1983-01-01

    The silicon surface barrier detectors (SBD), may be ideal devices to be used in dose indicators for the monitoring of gamma radiations; the SBD working as a cavity sensor. The measurement consists in counting the number of pulses that exceeds a certain level of discrimination, this number being proportional to the absorbed dose. The spectral distribution of the pulses gives an idea of the existing photons field's energy. Characteristic spectra obtained with different gamma-and X ray sources are described and analyzed, and tests are carried out by using different sensitive volumes of the detector in order to determine significant parameters for a gamma-monitor system. The results from the measurements indicate: a) high sensitivity of the system with SBD (high density of material); b) low background: enviromental backgrounds are reliably registered (approx. 10μ R/h); c) minimum detectable energies of the order of 60 keV; d) possibility to determine high exposure rates (approx. 100 R/h); e) for emitters of low Z, the result is approximately independent from the gamma energy. These results suggest the possibility of constructing fixed and portable systems, appropriate for gamma monitoring, which utilize SBD as sensors; these devices are adequate for working at enviroment temperatures, being compact, reliable, with low polarization voltages, and of relatively low cost. (M.E.L.) [es

  1. Phase Stability and Thermal Conductivity of Composite Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Benkel, Samantha; Zhu, Dongming

    2011-01-01

    Advanced environmental barrier coatings are being developed to protect SiC/SiC ceramic matrix composites in harsh combustion environments. The current coating development emphasis has been placed on the significantly improved cyclic durability and combustion environment stability in high-heat-flux and high velocity gas turbine engine environments. Environmental barrier coating systems based on hafnia (HfO2) and ytterbium silicate, HfO2-Si nano-composite bond coat systems have been processed and their stability and thermal conductivity behavior have been evaluated in simulated turbine environments. The incorporation of Silicon Carbide Nanotubes (SiCNT) into high stability (HfO2) and/or HfO2-silicon composite bond coats, along with ZrO2, HfO2 and rare earth silicate composite top coat systems, showed promise as excellent environmental barriers to protect the SiC/SiC ceramic matrix composites.

  2. Creep Behavior of Hafnia and Ytterbium Silicate Environmental Barrier Coating Systems on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Fox, Dennis S.; Ghosn, Louis J.; Harder, Bryan

    2011-01-01

    Environmental barrier coatings will play a crucial role in future advanced gas turbine engines because of their ability to significantly extend the temperature capability and stability of SiC/SiC ceramic matrix composite (CMC) engine components, thus improving the engine performance. In order to develop high performance, robust coating systems for engine components, appropriate test approaches simulating operating temperature gradient and stress environments for evaluating the critical coating properties must be established. In this paper, thermal gradient mechanical testing approaches for evaluating creep and fatigue behavior of environmental barrier coated SiC/SiC CMC systems will be described. The creep and fatigue behavior of Hafnia and ytterbium silicate environmental barrier coatings on SiC/SiC CMC systems will be reported in simulated environmental exposure conditions. The coating failure mechanisms will also be discussed under the heat flux and stress conditions.

  3. Property Evaluation and Damage Evolution of Environmental Barrier Coatings and Environmental Barrier Coated SiC/SiC Ceramic Matrix Composite Sub-Elements

    Science.gov (United States)

    Zhu, Dongming; Halbig, Michael; Jaskowiak, Martha; Hurst, Janet; Bhatt, Ram; Fox, Dennis S.

    2014-01-01

    This paper describes recent development of environmental barrier coatings on SiC/SiC ceramic matrix composites. The creep and fatigue behavior at aggressive long-term high temperature conditions have been evaluated and highlighted. Thermal conductivity and high thermal gradient cyclic durability of environmental barrier coatings have been evaluated. The damage accumulation and complex stress-strain behavior environmental barrier coatings on SiCSiC ceramic matrix composite turbine airfoil subelements during the thermal cyclic and fatigue testing of have been also reported.

  4. Si(Li) detectors with thin dead layers for low energy x-ray detection

    International Nuclear Information System (INIS)

    Rossington, C.S.; Walton, J.T.; Jaklevic, J.M.

    1990-10-01

    Regions of incomplete charge collection, or ''dead layers'', are compared for Si(Li) detectors fabricated with Au and Pd entrance window electrodes. The dead layers were measured by characterizing the detector spectral response to x-ray energies above and below the Si Kα absorption edge. It was found that Si(Li) detectors with Pd electrodes exhibit consistently thinner effective Si dead layers than those with Au electrodes. Furthermore, it is demonstrated that the minimum thickness required for low resistivity Pd electrodes is thinner than that required for low resistivity Au electrodes, which further reduces the signal attenuation in Pd/Si(Li) detectors. A model, based on Pd compensation of oxygen vacancies in the SiO 2 at the entrance window Si(Li) surface, is proposed to explain the observed differences in detector dead layer thickness. Electrode structures for optimum Si(Li) detector performance at low x-ray energies are discussed. 18 refs., 8 figs., 1 tab

  5. Estimation of interface resistivity in bonded Si for the development of high performance radiation detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yamashita, Makoto; Nomiya, Seiichiro; Onabe, Hideaki

    2007-01-01

    For the development of high performance radiation detectors, direct bonding of Si wafers would be an useful method. Previously, p-n bonded Si were fabricated and they showed diode characteristics. The interface resistivity was, however, not investigated in detail. For the study of interface resistivity, n-type Si wafers with different resistivities were bonded. The resistivity of bonded Si wafers were measured and the interface resistivity was estimated by comparing with the results of model calculations. (author)

  6. Target set-up for measurements with the use of a Si-ball detector

    Science.gov (United States)

    Kordyasz, A.; Stolarz, A.; Mierzejewski, J.

    2011-11-01

    The thin n-p + layer of Si n +-n-p + wafers composing the light charged particles detectors can be easily damaged by scattered beam projectiles or heavy products of the nuclear reaction in target material. Such damages of the sensitive part of the wafer may in consequence shorten the detector life-time. This could be avoided by protecting the sensitive part of the detector with shielding that stops the heavy projectiles. Due to the compact configuration of the detectors in a small Si-ball counters placing the shielding in front of each wafer could be difficult and therefore a target-shielding assembly is proposed.

  7. Diffusion barrier and adhesion properties of SiO(x)N(y) and SiO(x) layers between Ag/polypyrrole composites and Si substrates.

    Science.gov (United States)

    Horváth, Barbara; Kawakita, Jin; Chikyow, Toyohiro

    2014-06-25

    This paper describes the interface reactions and diffusion between silver/polypyrrole (Ag/PPy) composite and silicon substrate. This composite material can be used as a novel technique for 3D-LSI (large-scale integration) by the fast infilling of through-silicon vias (TSV). By immersion of the silicon wafer with via holes into the dispersed solution of Ag/PPy composite, the holes are filled with the composite. It is important to develop a layer between the composite and the Si substrate with good diffusion barrier and adhesion characteristics. In this paper, SiOx and two types of SiOxNy barrier layers with various thicknesses were investigated. The interface structure between the Si substrate, the barrier, and the Ag/PPy composite was characterized by transmission electron microscopy. The adhesion and diffusion properties of the layers were established for Ag/PPy composite. Increasing thickness of SiOx proved to permit less Ag to transport into the Si substrate. SiOxNy barrier layers showed very good diffusion barrier characteristics; however, their adhesion depended strongly on their composition. A barrier layer composition with good adhesion and Ag barrier properties has been identified in this paper. These results are useful for filling conductive metal/polymer composites into TSV.

  8. FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip....

  9. Particle Identification algorithm for the CLIC ILD and CLIC SiD detectors

    CERN Document Server

    Nardulli, J

    2011-01-01

    This note describes the algorithm presently used to determine the particle identification performance for single particles for the CLIC ILD and CLIC SiD detector concepts as prepared in the CLIC Conceptual Design Report.

  10. Particle mis-identification rate algorithm for the CLIC ILD and CLIC SiD detectors

    CERN Document Server

    Nardulli, J

    2011-01-01

    This note describes the algorithm presently used to determine the particle mis- identification rate and gives results for single particles for the CLIC ILD and CLIC SiD detector concepts as prepared for the CLIC Conceptual Design Report.

  11. Uncooled Radiation Hard SiC Schottky VUV Detectors Capable of Single Photon Sensing, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize very large area, uncooled and radiative hard 4H-SiC VUV detectors capable of near single...

  12. Analysis and comparison of the breakdown performance of semi- insulator and dielectric passivated Si strip detectors

    CERN Document Server

    Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

    2002-01-01

    The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction dep...

  13. Combined Thermomechanical and Environmental Durability of Environmental Barrier Coating Systems on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan; Bhatt, Ramakrishna

    2016-01-01

    Environmental barrier coatings (EBCs) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in next generation turbine engines for hot-section component applications. The development of prime-reliant environmental barrier coatings is essential to the EBC-CMC system durability, ensuring the successful implementations of the high temperature and lightweight engine component technologies for engine applications.This paper will emphasize recent NASA environmental barrier coating and CMC developments for SiC/SiC turbine airfoil components, utilizing advanced coating compositions and processing methods. The emphasis has been particularly placed on thermomechanical and environment durability evaluations of EBC-CMC systems. We have also addressed the integration of the EBCs with advanced SiC/SiC CMCs, and studied the effects of combustion environments and Calcium-Magnesium-Alumino-Silicate (CMAS) deposits on the durability of the EBC-CMC systems under thermal gradient and mechanical loading conditions. Advanced environmental barrier coating systems, including multicomponent rare earth silicate EBCs and HfO2-Si based bond coats, will be discussed for the performance improvements to achieve better temperature capability and CMAS resistance for future engine operating conditions.

  14. POSSuMUS. A position sensitive scintillating muon SiPM detector

    International Nuclear Information System (INIS)

    Ruschke, Alexander

    2014-01-01

    The development of a modular designed large scale scintillation detector with a two-dimensional position sensitivity is presented in this thesis. This novel POsition Sensitive Scintillating MUon SiPM Detector is named POSSuMUS. The POSSuMUS detector is capable to determine the particle's position in two space dimensions with a fast trigger capability. Each module is constructed from two trapezoidal shaped plastic scintillators to form one rectangular shaped detector module. Both trapezoids are optically insulated against each other. In both trapezoids the scintillation light is collected by plastic fibers and guided towards silicon photomultipliers (SiPMs). SiPMs are light sensors which are capable to detect even smallest amounts of light. By combining several detector modules, position sensitive areas from 100 cm 2 to few m 2 are achievable with few readout channels. Therefore, POSSuMUS provides a cost effective detector concept. The position sensitivity along the trapezoidal geometry of one detector module is achieved by the path length dependent amount of detected light for crossing particles. The ratio of the light yields in both trapezoids is calculated. This value corresponds to the position of the particle traversing the detector. A spatial resolution in the order of several mm is foreseen. The position sensitivity along the scintillator module is determined by the propagation time of light to the SiPMs located on opposite sides of the detector. A spatial resolution of few cm is expected for this direction. The POSSuMUS detector is applicable as large area trigger detector with a two dimensional position information of crossing particles. This is suitable in detector tests of large area precesion detectors or for measuring the small angle scattering of cosmic muons. At the beginning of this thesis, the determination of important SiPM characteristics like the breakdown voltage is presented. In the course of this work the detector principle is proven by

  15. Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: Recent Advances and Future Directions

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    This presentation briefly reviews the SiC/SiC major environmental and environment-fatigue degradations encountered in simulated turbine combustion environments, and thus NASA environmental barrier coating system evolution for protecting the SiC/SiC Ceramic Matrix Composites for meeting the engine performance requirements. The presentation will review several generations of NASA EBC materials systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. This paper will also focus on the performance requirements and design considerations of environmental barrier coatings for next generation turbine engine applications. The current development emphasis is placed on advanced NASA candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. The efforts have been also directed to developing prime-reliant, self-healing 2700F EBC bond coat; and high stability, lower thermal conductivity, and durable EBC top coats. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance will be described. The research and development opportunities for turbine engine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be briefly discussed.

  16. Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

    Directory of Open Access Journals (Sweden)

    Hassan Maktuff Jaber Al-Ta'ii

    2015-02-01

    Full Text Available Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al/DNA/silicon (Si rectifying junctions using their current-voltage (I-V characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0 was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min. These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors.

  17. Development of high sensitivity 4H-SiC detectors for fission neutron pulse shape measurements

    Science.gov (United States)

    Wu, Jian; Jiang, Yong; Li, Meng; Zeng, Lina; Li, Junjie; Gao, Hui; Zou, Dehui; Bai, Zhongxiong; Ye, Cenming; Liang, Wenfeng; Dai, Shaofeng; Lu, Yi; Rong, Ru; Du, Jinfeng; Fan, Xiaoqiang

    2017-08-01

    4H-silicon carbide (4H-SiC) detectors are well suited for measurements of fission neutron pulse shape for their compact size, excellent radiation resistance, and hydrogen free composition. The aim of this study is to improve the 4H-SiC detector's sensitivity to fission neutron pulses. 4H-SiC detectors with varied epilayer thicknesses are fabricated and then tested in the pulsed neutron field of the Chinese Fast Burst Reactor II (CFBR II). The sensitivity of the 4H-SiC detector to the CFBR II neutron pulse is increased by 139.8%, with the enlargement of epilayer thickness from 20 μm to 120 μm. By employing the proton-recoil method, the sensitivity of the 4H-SiC detector to the CFBR II neutron pulse is further increased by 11.6%. With enhanced sensitivity to fission neutron pulses, 4H-SiC detectors are promising devices for high intensity neutron pulse measurements.

  18. Characterisation of NdFeB thin films prepared on (100)Si substrates with SiO2 barrier layers

    International Nuclear Information System (INIS)

    Sood, D.K.; Muralidhar, G.K.

    1998-01-01

    This work presents a systematic study of the deposition and characterization of NdFeB films on substrates of Si(100) and of SiO2 layer thermally grown on Si(100) held at RT, 360 deg C or 440 deg C. The post-deposition annealing is performed at 600 or 800 deg C in vacuum. The films are characterised using the analytical techniques of RBS, SIMS, XRD, OM and SEM. Results indicate that SiO2 is, in deed, an excellent diffusion barrier layer till 600 deg C but becomes relatively less effective at 800 deg C. Without this barrier layer, interdiffusion at the Si-NdFeB film interface leads to formation of iron silicides, α-Fe and B exclusion from the diffusion zone, in competition with the formation of the magnetic NdFeB phase. (authors)

  19. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    Directory of Open Access Journals (Sweden)

    Negin Golshani

    2014-10-01

    Full Text Available In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN layer deposited by reactive sputtering in a mixture of Ar/N2, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  20. Measuring variation of indoor radon concentration using bare nuclear tracks detectors, scintillation counters and surface barrier detectors

    International Nuclear Information System (INIS)

    Ishak, I.; Mahat, R.H.; Amin, Y.M.

    1996-01-01

    Bare LRI 15 nuclear track detectors , scintillators counter and surface barrier detectors were used to measured the indoor radon concentration in various location within two rooms. Spatial variation of the radon concentration is caused by positioning of the door, windows, furniture, cracks in the building and also distances from floor, wall and ceiling. It is found that the change in temperature are causing radon concentration to increase at certain time of the day

  1. Analysis and optimal design of Si microstrip detector with overhanging metal electrode

    CERN Document Server

    Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

    2001-01-01

    The harsh radiation environment to be encountered at LHC (large hadron collider) and RHIC (relativistic heavy ion collider) poses a challenging task for the fabrication of Si microstrip detectors. Due to high luminosities, detectors are required to sustain very high voltage operation well exceeding the bias voltage needed to fully deplete them. The "overhanging" metal contact is now a well established technique for improving the breakdown performance of the Si microstrip detector. Based on computer simulation, the influence of various physical and geometrical parameters on the electrical breakdown of the Si detectors equipped with metal overhangs is extensively analysed. Furthermore, optimization of design parameters is performed to achieve breakdown voltages close to maximum realizable values. The simulation results are found to be in good agreement with experimental data. (17 refs).

  2. Interface engineered carbon nanotubes with SiO{sub 2} for flexible infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Zhenlong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gao, Min, E-mail: mingao@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Center for Information in Medicine, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Pan, Taisong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Wei, Xianhua [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang, Sichuan 621010 (China); Chen, Chonglin [Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249 (United States); Department of Physics and the Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States); Lin, Yuan, E-mail: linyuan@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Center for Information in Medicine, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

    2017-08-15

    Highlights: • Interface engineered carbon nanotubes with SiO{sub 2} is used to construct a kind of flexible infrared detector. • The interface between the MWCNTs and SiO{sub 2} could enhance the IR response speed. • Detector based on the integrated interface of MWCNTs and SiO{sub 2} has successfully detected the movements of the human fingers. - Abstract: Nitrogen-doped/non-doped carbon nanotubes (CNTs) were integrated on SiO{sub 2}/Si and PMMA substrates for understanding the infrared sensing mechanisms. The nanotube structures on SiO{sub 2} substrates exhibit a much shorter response time (about 40 ms) than those directly on PMMA substrates (about 1200 ms), indicating the interface effects between CNTs and the substrates. The infrared responses for both structures show a linear relationship with the light power density even at the radiation power as low as 0.1 mW/mm{sup 2}. Moreover, a new concept flexible IR detector was designed and fabricated by transferring the CNTs/SiO{sub 2} structure onto the PMMA substrate, which exhibits both short response time (50 ms) and good flexibility. The successful detection of human finger movements indicates the practical applications of the CNT-based detectors for the detection of weak thermal or far infrared radiation.

  3. Crystal growth of Mg2Si for IR-detector

    Science.gov (United States)

    Tokairin, Toshio; Ikeda, Junya; Udono, Haruhiko

    2017-06-01

    Semiconducting Mg2Si is known as a thermoelectric material and recently attracts increasing attention as a Si-based, low-cost and environmental friendly material for an infrared (IR) sensor. With the aim of producing cost-effective Mg2Si single crystal substrates for the IR sensor, we have investigated single crystal growth of Mg2Si using the vertical Bridgman (VB) and micro-pulling-down (μ-PD) methods in open-system. Since the evaporation of Mg was not suppressed during the μ-PD, the composition of the Mg2Si single crystal grown by this method was not stoichiometric. On the other hand, single crystalline Mg2Si was produced by the VB method using the Si-treated inner carbon seat and BN-coated carbon crucible. The Mg2Si crystals with a diameter of 30 mm were grown at a growth rate of 0.5 mm/min and a temperature gradient of 5 °C/cm. The electron density and mobility of the crystal so obtained were 1.8×1017 cm-3 and 283 cm2V-1s-1 at 300 K, respectively. The high electron density was due to contamination from the impurities presented in the crucible.

  4. Fabricating with crystalline Si to improve superconducting detector performance

    International Nuclear Information System (INIS)

    Beyer, A D; Frez, C F; Day, P K; Hollister, M I; Sayers, J; Golwala, S R

    2017-01-01

    We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO_2 and Si_xN_y, where tan δ ∼ 10"-"3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 ± 2) × 10"-"5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 ± 0.6) × 10"-"5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices. (paper)

  5. Analysis and Control of Carrier Transport in Unipolar Barrier Mid-Infrared (IR) Detectors

    Science.gov (United States)

    2017-01-03

    AFRL-RV-PS- AFRL-RV-PS- TR-2016-0152 TR-2016-0152 ANALYSIS AND CONTROL OF CARRIER TRANSPORT IN UNIPOLAR BARRIER MID- INFRARED ( IR ) DETECTORS Gary W...SUBTITLE Analysis and Control of Carrier Transport in Unipolar Barrier Mid-Infrared ( IR ) Detectors 5a. CONTRACT NUMBER FA9453-15-1-0332 5b. GRANT...components of high performance mid- wave nBn mid-wave Infrared ( IR ) detectors. Material quality and surfaces can have deleterious effects on carrier

  6. Microstructure Evolution and Durability of Advanced Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Evans, Laura J.; McCue, Terry R.; Harder, Bryan

    2016-01-01

    Environmental barrier coated SiC-SiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. Advanced HfO2 and rare earth silicate environmental barrier coatings (EBCs), along with multicomponent hafnium and rare earth silicide EBC bond coats have been developed. The coating degradation mechanisms in the laboratory simulated engine thermal cycling, and fatigue-creep operating environments are also being investigated. This paper will focus on the microstructural and compositional evolutions of an advanced environmental barrier coating system on a SiC-SiC CMC substrate during the high temperature simulated durability tests, by using a Field Emission Gun Scanning Electron Microscopy, Energy Dispersive Spectroscopy (EDS) and Wavelength Dispersive Spectroscopy (WDS). The effects of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the degradation mechanisms of the environmental barrier coating systems will also be discussed. The detailed analysis results help understand the EBC-CMC system performance, aiming at the durability improvements to achieve more robust, prime-reliant environmental barrier coatings.

  7. One-cm-thick Si detector at LHe temperature

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Ferrara, Via Saragat 1, 44100 Ferrara (Italy)], E-mail: braggio@pd.infn.it; Bressi, G. [INFN, Sez. di Pavia, Via Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, Sez. di Padova, Via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [Laboratori Nazionali di Legnaro, Via dell' Universita 1, 35020 Legnaro (Italy); Serafin, A. [Dipartimento di Fisica, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy)

    2007-10-11

    A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events.

  8. One-cm-thick Si detector at LHe temperature

    International Nuclear Information System (INIS)

    Braggio, C.; Bressi, G.; Carugno, G.; Galeazzi, G.; Serafin, A.

    2007-01-01

    A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events

  9. Fabricating with crystalline Si to improve superconducting detector performance

    Science.gov (United States)

    Beyer, A. D.; Hollister, M. I.; Sayers, J.; Frez, C. F.; Day, P. K.; Golwala, S. R.

    2017-05-01

    We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ∼ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

  10. High Operating Temperature Midwave Quantum Dot Barrier Infrared Detector (QD-BIRD)

    Science.gov (United States)

    Ting, David Z.; Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Mumolo, Jason M.; Gunapala, Sarath D.

    2012-01-01

    The nBn or XBn barrier infrared detector has the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. High performance detectors and focal plane arrays (FPAs) based on InAsSb absorber lattice matched to GaSb substrate, with a matching AlAsSb unipolar electron barrier, have been demonstrated. The band gap of lattice-matched InAsSb yields a detector cutoff wavelength of approximately 4.2 ??m when operating at 150K. We report results on extending the cutoff wavelength of midwave barrier infrared detectors by incorporating self-assembled InSb quantum dots into the active area of the detector. Using this approach, we were able to extend the detector cutoff wavelength to 6 ?m, allowing the coverage of the full midwave infrared (MWIR) transmission window. The quantum dot barrier infrared detector (QD-BIRD) shows infrared response at temperatures up to 225 K.

  11. Study the radiation damage effects in Si microstrip detectors for future HEP experiments

    International Nuclear Information System (INIS)

    Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

    2016-01-01

    Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

  12. Study the radiation damage effects in Si microstrip detectors for future HEP experiments

    Energy Technology Data Exchange (ETDEWEB)

    Lalwani, Kavita, E-mail: kavita.phy@mnit.ac.in [Malaviya National Institute of Technology (MNIT) Jaipur, Jaipur-302017 (India); Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh [University of Delhi (DU), Delhi-110007 (India)

    2016-07-15

    Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

  13. Effect of SiO$_{2}$ passivating layer in segmented silicon planar detectors on the detector response

    CERN Document Server

    Verbitskaya, Elena; Eremin, Vladimir; Golubkov, S; Konkov, K; Roe, Shaun; Ruggiero, G; Sidorov, A; Weilhammer, Peter

    2004-01-01

    Silicon detectors with a fine segmentation (micropixel and microstrip) are the main type of detectors used in the inner trackers of LHC experiments. Due to the high luminosity of the LHC machines they are required to have a fast response to fit the short shaping time of 25 ns and to be radiation hard. Evaluation of silicon microstrip detectors developed for the ATLAS silicon tracker and carried out under collaboration of CERN and PTI has shown the reversal of the pulse polarity in the detector response to short- range radiation. Since the negative signal is of about 30% of the normal positive one, the effect strongly reduces the charge collection efficiency in irradiated detectors. The investigation presents the consideration on the origin of a negative response in Si microstrip detectors and the experimental proof of the model. The study of the effect has been carried out using "baby" strip detectors with a special design: each strip has a window in a metallization, which covers the p/sup +/ implant. The sca...

  14. Characterization of Si pixel detectors of different thickness

    International Nuclear Information System (INIS)

    Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Gregori, P.; Linsalata, S.; Novelli, M.; Piemonte, C.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Zorzi, N.; Zucca, S.

    2004-01-01

    Tests on silicon pixel detector in the mammographic energy range have shown good imaging performances so, in order to improve the efficiency in this energy range, we have designed thicker detectors of the p + /n type. The detectors have been fabricated by ITC-IRST (Trento, Italy) in high resistivity silicon substrates (300 and 525 μm thick). A TCAD simulation work has been carried out to optimize the electric field distribution and to enhance the breakdown voltage. Very low leakage current and high breakdown voltage characteristics have been measured on detectors in preliminary on-wafer tests. After that, detectors have been bump-bonded to a dedicated VLSI electronic chips, realizing an assembly. Choosing the best set-up condition and using a standard mammographic tube, we have acquired a large area image (8x8 cm 2 ) of the RMI 156 phantom, recommended for mammographic quality checks. In order to cover the whole surface, we have acquired different images translating the phantom over the assembly. We present some selected results for these assemblies both for the electrical characteristics and for the imaging performances

  15. Characterisation of Ta-based barrier films on SiLK for Cu-metalisation

    NARCIS (Netherlands)

    van Nieuwkasteele-Bystrova, Svetlana Nikolajevna; Holleman, J.; Woerlee, P.H.; Wolters, Robertus A.M.

    2002-01-01

    Structures with Ta, TaxN1-x, Ta90C10, Ta95Si5 on SiLK were tested using in-situ 4- point probe resistance measurements during annealing up to 400oC. The change in normalized resistance by a factor of up to 2.58 was attributed to oxygen diffusion out of SiLK layer into the barriers. No direct

  16. Naturally occurring 32 Si and low-background silicon dark matter detectors

    Energy Technology Data Exchange (ETDEWEB)

    Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

    2018-05-01

    The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

  17. Si and gaas pixel detectors for medical imaging applications

    International Nuclear Information System (INIS)

    Bisogni, M. G.

    2001-01-01

    As the use of digital radiographic equipment in the morphological imaging field is becoming the more and more diffuse, the research of new and more performing devices from public institutions and industrial companies is in constant progress. Most of these devices are based on solid-state detectors as X-ray sensors. Semiconductor pixel detectors, originally developed in the high energy physics environment, have been then proposed as digital detector for medical imaging applications. In this paper a digital single photon counting device, based on silicon and GaAs pixel detector, is presented. The detector is a thin slab of semiconductor crystal where an array of 64 by 64 square pixels, 170- m side, has been built on one side. The data read-out is performed by a VLSI integrated circuit named Photon Counting Chip (PCC), developed within the MEDIPIX collaboration. Each chip cell geometrically matches the sensor pixel. It contains a charge preamplifier, a threshold comparator and a 15 bits pseudo-random counter and it is coupled to the detector by means of bump bonding. Most important advantages of such system, with respect to a traditional X-rays film/screen device, are the wider linear dynamic range (3x104) and the higher performance in terms of MTF and DQE. Besides the single photon counting architecture allows to detect image contrasts lower than 3%. Electronics read-out performance as well as imaging capabilities of the digital device will be presented. Images of mammographic phantoms acquired with a standard Mammographic tube will be compared with radiographs obtained with traditional film/screen systems

  18. Development of an angled Si-PM-based detector unit for positron emission mammography (PEM) system

    Energy Technology Data Exchange (ETDEWEB)

    Nakanishi, Kouhei, E-mail: nakanishi.kouhei@c.mbox.nagoya-u.ac.jp; Yamamoto, Seiichi

    2016-11-21

    Positron emission mammography (PEM) systems have higher sensitivity than clinical whole body PET systems because they have a smaller ring diameter. However, the spatial resolution of PEM systems is not high enough to detect early stage breast cancer. To solve this problem, we developed a silicon photomultiplier (Si-PM) based detector unit for the development of a PEM system. Since a Si-PM's channel is small, Si-PM can resolve small scintillator pixels to improve the spatial resolution. Also Si-PM based detectors have inherently high timing resolution and are able to reduce the random coincidence events by reducing the time window. We used 1.5×1.9×15 mm LGSO scintillation pixels and arranged them in an 8×24 matrix to form scintillator blocks. Four scintillator blocks were optically coupled to Si-PM arrays with an angled light guide to form a detector unit. Since the light guide has angles of 5.625°, we can arrange 64 scintillator blocks in a nearly circular shape (a regular 64-sided polygon) using 16 detector units. We clearly resolved the pixels of the scintillator blocks in a 2-dimensional position histogram where the averages of the peak-to-valley ratios (P/Vs) were 3.7±0.3 and 5.7±0.8 in the transverse and axial directions, respectively. The average energy resolution was 14.2±2.1% full-width at half-maximum (FWHM). By including the temperature dependent gain control electronics, the photo-peak channel shifts were controlled within ±1.5% with the temperature from 23 °C to 28 °C. With these results, in addition to the potential high timing performance of Si-PM based detectors, our developed detector unit is promising for the development of a high-resolution PEM system.

  19. Detection unit using the Si(Li)-semiconductor detector and thermoelectric refrigerator

    International Nuclear Information System (INIS)

    Vajgachev, A.A.

    1980-01-01

    It is suggested that a modified detection unit with Si(Li)-detector and thermoelectric refrigerator should be used for multielement analysis. The head part of the detection unit, containing Si(Li)-detector, cold conductor, made of leucosapphire and field-effect transistor of preamplifier, is made in the form of a separate unit. This fact made it possible to approach maximal cooling of both the detector and field-effect transistor, as well as to reduce capacity of gate-case system to the minimum. Diameter of the head part is 19 mm, the height-20 mm. The aquare of sensitive surface of the detectors is 10-25 mm 2 , and their thickness - 2.5-4mm. A charge-sensitive preamplifier, having conversion coefficient of 500 mW/MeV and energy equivalent of noises at the optimal temperature equal to 300 eV, is used in the detection unit. Temperature dependences of energy resolution and ''peak-to-noise'' parameter, measured within 80-200 K temperature range, are given. Analysis of the obtained results permits to conclude that energy resolution of Si(Li)-detectors essentially worsens at the temperatures of 170-190 K. It is explained by the fact that the design of the head part provides optimal conditions of cooling the detector and field-effect transistor at 140-170 K temperature. It is also stated that ''peak-to-noise'' parameter continuously decreases with temperature increase, beginning from 80 K, the nature of this dependence being determined by peculiarities of production technology of certain specimens of detectors. The detection unit on the base of Si(Li)-detector and thermoelectric refrigerator provides energy resolution of 450 eV on MnKsub(α) line, and it can be successfully used in the X-ray radiometric analysis [ru

  20. 6,7Li + 28Si total reaction cross sections at near barrier energies

    International Nuclear Information System (INIS)

    Pakou, A.; Musumarra, A.; Pierroutsakou, D.; Alamanos, N.; Assimakopoulos, P.A.; Divis, N.; Doukelis, G.; Gillibert, A.; Harissopulos, S.; Kalyva, G.; Kokkoris, M.; Lagoyannis, A.; Mertzimekis, T.J.; Nicolis, N.G.; Papachristodoulou, C.; Perdikakis, G.; Roubos, D.; Rusek, K.; Spyrou, S.; Zarkadas, Ch.

    2007-01-01

    Total reaction cross section measurements for the 6,7 Li + 28 Si systems have been performed at near-barrier energies. The results indicate that, with respect to the potential anomaly at barrier, 6 Li and 7 Li on light targets exhibit similar energy dependence on the imaginary potential. Comparisons are made with 6,7 Li cross sections on light and heavy targets, extracted via previous elastic scattering measurements and also with CDCC calculations. Energy dependent parametrisations are also obtained for total reaction cross sections of 6,7 Li on Si, as well as on any target, at near barrier energies

  1. Moisture barrier evaluation of SiO{sub x}/SiN{sub x} stacks on polyimide substrates using electrical calcium test

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Shiyu; Xue, Wei; Yu, Zhinong, E-mail: znyu@bit.edu.cn

    2015-04-01

    Electrical calcium (Ca) test was used to measure water vapor transmission rate (WVTR) through polyimide (PI) substrate with barrier films. The WVTR was obtained by measuring the resistance of the Ca as a function of time. Barrier films consisted of silicon oxide (SiO{sub x})/silicon nitride (SiN{sub x}) stacks were consecutively deposited onto the PI substrate at 350 °C by plasma-enhanced chemical vapor deposition. SiN{sub x} and SiO{sub x} films show great moisture impermeability while the SiN{sub x} film presented higher moisture resistance than the SiO{sub x} film. The sample of PI coated with SiO{sub x}/SiN{sub x} stacks was kept flat by stress compensation of SiN{sub x} film and SiO{sub x} film. The WVTR value of the optimum barrier structure (5 pairs of SiO{sub x}/SiN{sub x}) is 5.58 × 10{sup −6} g/(m{sup 2} day) under an electrical Ca test (25 °C, 40% relative humidity). After 500 times cyclic bending in a compressive mode, WVTR value keeps below 4.32 × 10{sup −5} g/(m{sup 2} day). The SiO{sub x}/SiN{sub x} barrier stacks presented on PI have a great potential for flexible electronics applications. - Highlights: • The electrical Ca test was used to measure water vapor transmission rate. • SiO{sub x}/SiN{sub x} stacks as diffusion barrier of water vapor are effective. • The optimum barrier structure is 5 pairs of SiO{sub x}/SiN{sub x}.

  2. Characterisation of SI Detectors for the Use at 2 K*

    CERN Document Server

    Bartosik, M; Eisel, T; Kurfuerst, C; Rementeria, C; Sapinski, M; Eremin, V; Verbitskaya, E

    2013-01-01

    It is expected that the luminosity of the Large Hadron Collider (LHC) will be bounded in the future by the beam loss limits of the superconducting magnets. To protect the superconducting magnets of the high luminosity insertions an optimal detection of the energy deposition by the shower of beam particles is necessary. Therefore beam Loss Monitors (BLM) need to be placed close to the particle impact location in the cold mass of the magnets where they should operate in superfluid helium at 1.9 Kelvin. To choose optimal detectors n-type silicon wafers have been examined at superfluid helium temperature whilst under irradiation from a high intensity proton beam. The radiation hardness and leakage current of these detectors were found to be significantly improved at 1.9 Kelvin when compared to their operation at room temperature.

  3. An improved fabrication process for Si-detector-compatible JFETs

    International Nuclear Information System (INIS)

    Piemonte, Claudio; Dalla Betta, Gian-Franco; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Ratti, Lodovico

    2006-01-01

    We report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for a sizeable enhancement in the JFET performance. In this paper, the main features of the fabrication technology are presented and selected results from the electrical and noise characterization of transistors are discussed

  4. Beta-spectrometer with Si-detectors for the study of 144Ce-144Pr decays

    Science.gov (United States)

    Alexeev, I. E.; Bakhlanov, S. V.; Bazlov, N. V.; Chmel, E. A.; Derbin, A. V.; Drachnev, I. S.; Kotina, I. M.; Muratova, V. N.; Pilipenko, N. V.; Semyonov, D. A.; Unzhakov, E. V.; Yeremin, V. K.

    2018-05-01

    Here we present the specifications of a newly developed beta-spectrometer, based on full absorption Si(Li) detector and thin transmission detector, allowing one to perform efficient separation beta-radiation and accompanying X-rays and gamma radiation. Our method is based on registration of coincident events from both detectors. The spectrometer can be used for precision measurements of various beta-spectra, namely for the beta-spectrum shape study of 144Pr, which is considered to be an advantageous anti-neutrino source for sterile neutrino searches.

  5. SPICE evaluation of the S/N ratio for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Padova Univ.; Nardi, F.

    1999-01-01

    SPICE simulations of AC-coupled single-sided Si microstrip detectors connected to the Pre-Shape 32 read-out chip have been performed in order to determine the geometrical characteristics which maximize the signal-to-noise ratio at room temperature. All the resistive and capacitive elements of the detector have been determined as a function of the ω/ρ ratio, by considering experimental and simulated data available in the literature. The SPICE model takes into account all the main noise source in the detector and read-out electronics. The minimum ionizing particle current signal shape characteristics have been introduced in the simulations. Two read-out configurations have been investigated for 6.4 cm and 12.8 cm long detectors. Finally, general guidelines in the detector design have been proposed starting from the simulation results

  6. Time Of Flight Detectors: From phototubes to SiPM

    International Nuclear Information System (INIS)

    Laurenti, G.; Levi, G.; Foschi, E.; Guandalini, C.; Quadrani, L.; Sbarra, C.; Zuffa, M.

    2008-01-01

    A sample of Silicon Photomultipliers was tested because they looked promising for future space missions: low consumption, low weight, resistance to radiation damage and insensitivity to magnetic fields. They have been studied in laboratory by means of the same characterization methods adopted to calibrate the fine mesh photomultipliers used by the Time Of Flight of the AMS-02 experiment. A detailed simulation was made to reproduce the SiPM response to the various experimental conditions. A possible counter design has been studied with front end electronics card equipped with SiPMs and Peltier cell for thermoregulation. A proper simulation based on COMSOL Multiphysics package reproduces quite well the Peltier cell nominal cooling capability

  7. Time Of Flight Detectors: From phototubes to SiPM

    Energy Technology Data Exchange (ETDEWEB)

    Laurenti, G. [INFN of Bologna, Viale B.Pichat 4/2, 40127 Bologna (Italy); Levi, G.; Foschi, E.; Guandalini, C.; Quadrani, L. [Department of Physics and INFN, Viale B.Pichat 4/2, 40127 Bologna (Italy); Sbarra, C. [Department of Physics and INFN, Viale B.Pichat 4/2, 40127 Bologna (Italy); Enrico Fermi Research Center, Via Panisperna 89, 06100 Roma (Italy)], E-mail: cristina.sbarra@bo.infn.it; Zuffa, M. [INFN of Bologna, Viale B.Pichat 4/2, 40127 Bologna (Italy)

    2008-04-01

    A sample of Silicon Photomultipliers was tested because they looked promising for future space missions: low consumption, low weight, resistance to radiation damage and insensitivity to magnetic fields. They have been studied in laboratory by means of the same characterization methods adopted to calibrate the fine mesh photomultipliers used by the Time Of Flight of the AMS-02 experiment. A detailed simulation was made to reproduce the SiPM response to the various experimental conditions. A possible counter design has been studied with front end electronics card equipped with SiPMs and Peltier cell for thermoregulation. A proper simulation based on COMSOL Multiphysics package reproduces quite well the Peltier cell nominal cooling capability.

  8. Experimental study on the 1/f noise in surface-barrier particle detectors

    International Nuclear Information System (INIS)

    Dabrowski, W.; Korbel, K.

    1988-01-01

    The results of experimental investigations of the 1/f noise origins in a surface-barrier particle detector are presented. In these experiments an ordinary surface-barrier detector provided with a reasonably designed guard-ring was used. The measurements of the noise spectra were performed in the ''floating'' and ''balanced'' guard-ring conditions. This way two components of the 1/f noise were determined: the noise occuring due to the surface phenomena, connected with the flow of the surface leakage current, and the noise originated in the bulk of semiconductor, caused by the mobility fluctuation of charge carriers. 9 refs., 5 figs., 2 tabs. (author)

  9. Photodetection Characterization of SiPM Technologies for their Application in Scintillator based Neutron Detectors

    Science.gov (United States)

    Kumar, S.; Durini, D.; Degenhardt, C.; van Waasen, S.

    2018-01-01

    Small-angle neutron scattering (SANS) experiments have become one of the most important techniques in the investigation of the properties of material on the atomic scale. Until 2001, nearly exclusively 3He-based detectors were used for neutron detection in these experiments, but due to the scarcity of 3He and its steeply rising price, researchers started to look for suitable alternatives. Scintillation based solid state detectors appeared as a prominent alternative. Silicon photomultipliers (SiPM), having single photon resolution, lower bias voltages compared to photomultiplier tubes (PMT), insensitivity to magnetic fields, low cost, possibility of modular design and higher readout rates, have the potential of becoming a photon detector of choice in scintillator based neutron detectors. The major concerns for utilizing the SiPM technology in this kind of applications are the increase in their noise performance and the decrease in their photon detection efficiency (PDE) due to direct exposure to neutrons. Here, a detailed comparative analysis of the PDE performance in the range between UV and NIR parts of the spectra for three different SiPM technologies, before and after irradiation with cold neutrons, has been carried out. For this investigation, one digital and two analog SiPM arrays were irradiated with 5Å wavelength cold neutrons and up to a dose of 6×1012 n/cm2 at the KWS-1 instrument of the Heinz Maier-Leibnitz Zentrum (MLZ) in Garching, Germany.

  10. X-ray escape effects in Si, Ge, and NaI detectors

    International Nuclear Information System (INIS)

    Brunner, G.

    1989-01-01

    A 3-parameter representation of the type x = K 1 [1 -L(ln(1 + 1/L))] together with L = K 2 E K 3 is recommended for the escape to parent peak ratio. Parameter values are provided for Si, Ge, and NaI detectors. Scattering, which has been neglected up to now, is included. (author)

  11. Development of Si-based detectors for intermediate energy heavy-ion physics at a storage-ring accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Whitlow, H.J.; Jaworowski, J.; Leandersson, M.; El Bouanani, M. [Lund Institute of Technology, Solvegatan Lund, (Sweden). Department of Nuclear Physics; Jakobsson, B. [Lund Univ. (Sweden). Dept. of Cosmic and Subatomic Physics; Romanski, J.; Westerberg, L.; Van Veldhuizen, E.J. [Uppsala Univ. (Sweden); The Chicsi Collaboration

    1996-12-31

    Ultrahigh vacuum (UHV) compatible Si detectors are being developed by the CELSIUS Heavy lon Collaboration (CHIC) for measuring the energy and identity of Intermediate Mass Fragments (IMF) with Z {approx} 3 - 12 and energies of 0.7 - I 0 A MeV. Here we give an overview of the development of Si {delta}E-E detector telescopes and investigations on IMF identification based on the pulse shape from Si-detectors where the particles impinge on the rear-face of the detector. 9 refs., 4 figs.

  12. First Compton telescope prototype based on continuous LaBr3-SiPM detectors

    International Nuclear Information System (INIS)

    Llosá, G.; Cabello, J.; Callier, S.; Gillam, J.E.; Lacasta, C.; Rafecas, M.; Raux, L.; Solaz, C.; Stankova, V.; La Taille, C. de; Trovato, M.; Barrio, J.

    2013-01-01

    A first prototype of a Compton camera based on continuous scintillator crystals coupled to silicon photomultiplier (SiPM) arrays has been successfully developed and operated. The prototype is made of two detector planes. The first detector is made of a continuous 16×18×5 mm 3 LaBr 3 crystal coupled to a 16-elements SiPM array. The elements have a size of 3×3 mm 3 in a 4.5×4.05 mm 2 pitch. The second detector, selected by availability, consists of a continuous 16×18×5 mm 3 LYSO crystal coupled to a similar SiPM array. The SPIROC1 ASIC is employed in the readout electronics. Data have been taken with a 22 Na source placed at different positions and images have been reconstructed with the simulated one-pass list-mode (SOPL) algorithm. Detector development for the construction of a second prototype with three detector planes is underway. LaBr 3 crystals of 32×36 mm 2 size and 5/10 mm thickness have been acquired and tested with a PMT. The resolution obtained is 3.5% FWHM at 511 keV. Each crystal will be coupled to four MPPC arrays. Different options are being tested for the prototype readout

  13. Si pixel detectors in the detection of EC/EC decay

    Energy Technology Data Exchange (ETDEWEB)

    Jose, J. M.; Čermák, P.; Fajt, L.; Štekl, I. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 12800 Prague 2 (Czech Republic); Loaiza, P. [Laboratoire Souterrain de Modane, 73500 Modane (France); Rukhadze, N. I. [Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow region (Russian Federation); Shitov, Yu. A. [Imperial College London, Prince Consort Road, London SW7 2AZ (United Kingdom); Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow region (Russian Federation)

    2015-08-17

    The SPT collaboration has been investigating the applicability of pixel detectors in the detection of two neutrino double electron capture (2νEC/EC) in{sup 106}Cd. The collaboration has proposed a Silicon Pixel Telescope (SPT) where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. The Pixel detector gives spatial information along with energy of the particle, thus helps to identify and remove the background signals. Four units of SPT prototype (using 0.5 and 1 mm Si sensors) were fabricated and installed in the LSM underground laboratory, France. Recent progress in the SPT experiment and preliminary results from background measurements are presented.

  14. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.

    1989-09-01

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

  15. Fabrication and characterization of surface barrier detector from commercial silicon substrate

    International Nuclear Information System (INIS)

    Silva, Julio Batista Rodrigues

    2016-01-01

    In this work it was developed radiation detectors silicon surface barrier that were capable of detecting the presence of gamma radiation from a low energy of iodine-125 seeds used in brachytherapy treatments. >From commercial silicon substrates detectors were developed, one sequence left of chemical treatments to the surfaces of these substrates with the intention of minimizing the possible noise generated, validation of the samples obtained as diodes, ensuring detector characteristics and effective use as detector for Iodine-125 radioactive sources with energy of about 25 keV and Americium-251 with energy on the order of 59 keV. Finished performing the analysis of the obtained energy spectra and so it was possible to observe the ability of these detectors to measure the energy from these seeds. (author)

  16. Physics and Applications of Unipolar Barriers in Infrared (IR) Detectors

    Science.gov (United States)

    2016-08-23

    additional valence band barriers to impede hole flow, consistent with the band diagram in Fig. 1(b). However the quaternary collec- tor structure exhibits...diagram of Fig. 1(b). The quaternary collec- tor structure, in contrast, shows an additional g–r dark current component indicating the existence of a...Proc. of SPIE Vol. 9070 907011-1 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 09/02/2016 Terms of Use: http

  17. Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

    CERN Document Server

    Quinn, T; Bruzzi, M; Cunningham, W; Mathieson, K; Moll, M; Nelson, T; Nilsson, H E; Pintillie, I; Rahman, M; Reynolds, L; Sciortino, S; Sellin, P J; Strachan, H; Svensson, B G; Vaitkus, J

    2003-01-01

    Measurements and simulations have been carried out using bulk and epitaxial SiC detectors. Samples were irradiated to fluences of around 10**1**4 hardrons/cm**2. Material of thickness 40um gave a charge collection efficiency of 100% dropping to around 60% at 100mum thickness. Detailed MEDICI simulations incorporated the main defect levels in SiC, the vanadium center, Z-center and a mid-gap level as measured by deep level transient spectroscopy and other techniques. Calculated recombination currents and charge collection efficiencies at varying fluences were comparable to experimental data. The study suggests that SiC detectors will operate up to fluences around 10 **1**6/cm**2 as required by future particle physics experiments.

  18. Large area, low capacitance Si(Li) detectors for high rate x-ray applications

    International Nuclear Information System (INIS)

    Rossington, C.S.; Fine, P.M.; Madden, N.W.

    1992-10-01

    Large area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier pulse-processing times. A typical device employing the new geometry with a thickness of 6 mm and an active area of 175 mm 2 has a capacitance of only 0.5 pf, compared to 2.9 pf for a conventional planar device with equivalent dimensions. These new low capacitance detectors, used in conjunction with low capacitance field effect transistors, will result in x-ray spectrometers capable of operating at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of x-ray energies at 80 K is comparable to typical state-of-the-art conventional Si(Li) devices. In addition to their low capacitance, the new devices offer other advantages over conventional detectors. Detector fabrication procedures, I-V and C-V characteristics, noise performance, and spectral response to 2-60 keV x-rays are described

  19. Investigation of temperature dependent barrier height of Au/ZnO/Si schottky diodes

    International Nuclear Information System (INIS)

    Asghar, M.; Mahmood, K.; Rabia, S.; BM, S.; Shahid, M. Y.; Hasan, M. A.

    2013-01-01

    In this study, temperature dependent current-voltage (I-V) measurements have been performed to investigate the inhomogeneity in the temperature dependent barrier heights of Au/ZnO/Si Schottky barrier diode in the temperature range 150 - 400K. The room temperature values for ideality factor and barrier height were found to be 2.9 and 0.60 eV respectively indicating the inhomogenity in the barrier heights of grown samples. The Richardson plot and ideality factor verses barrier height graph were also drawn to verified the discontinuity between Au and ZnO. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear Fap (n) plot to n= 1 has given a homogeneous barrier height of approximately 1.1 eV. Fap versus 1/T plot was drawn to obtain the values of mean barrier height for Au/ZnO/Si Schottky diode (1.1 eV) and standard deviation(ds) (0.02 V) at zero bais. (author)

  20. Investigation of temperature dependent barrier height of Au/ZnO/Si schottky diodes

    International Nuclear Information System (INIS)

    Asghar, M; Mahmood, K; Rabia, S; M, Samaa B; Shahid, M Y; Hasan, M A

    2014-01-01

    In this study, temperature dependent current-voltage (I-V) measurements have been performed to investigate the inhomogeneity in the temperature dependent barrier heights of Au/ZnO/Si Schottky barrier diode in the temperature range 150 – 400K. The room temperature values for ideality factor and barrier height were found to be 2.9 and 0.60 eV respectively indicating the inhomogenity in the barrier heights of grown samples. The Richardson plot and ideality factor verses barrier height graph were also drawn to verified the discontinuity between Au and ZnO. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear Φ ap (n) plot to n= 1 has given a homogeneous barrier height of approximately 1.1 eV. Φ ap versus 1/T plot was drawn to obtain the values of mean barrier height for Au/ZnO/Si Schottky diode (1.1 eV) and standard deviation(δ s ) (0.02 V) at zero bais

  1. Durability and CMAS Resistance of Advanced Environmental Barrier Coatings Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2015-01-01

    Environmental barrier coatings (EBCs) and SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. This paper will emphasize advanced environmental barrier coating developments for SiCSiC turbine airfoil components, by using advanced coating compositions and processing, in conjunction with mechanical and environment testing and durability validations. The coating-CMC degradations and durability in the laboratory simulated engine fatigue-creep and complex operating environments are being addressed. The effects of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the degradation mechanisms of the environmental barrier coating systems will be discussed. The results help understand the advanced EBC-CMC system performance, aiming at the durability improvements of more robust, prime-reliant environmental barrier coatings for successful applications of the component technologies and lifing methodologies.

  2. Nonvolatile-memory characteristics of SiC nanocrystals with variable oxide thickness and crested tunnel barriers.

    Science.gov (United States)

    Han, Dong Seok; Lee, Dong Uk; Lee, Hyo Jun; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju

    2011-07-01

    The electrical characteristics of SiC nanocrystal nonvolatile-memory devices with variable oxide and crested tunnel barriers consisting of a SiO2/Si3N4/SiO2 (ONO) and a Si3N4/SiO2/Si3N4 (NON) layer, respectively, were investigated. The equivalent oxide thickness of the ONO and NON tunnel barriers were about 5.6 nm and 5.2 nm, respectively. When the +/- 13 V bias voltage was applied for 500 ms, the threshold voltage shifts of the SiC-nanocrystal-embedded memory devices with ONO and NON tunnel barriers were about 2.4 V. The operation speeds of the memories with ONO and NON tunnel barriers under the +/- 10 V applied pulse bias were approximately 5 and 20 ms, respectively. The field sensitivity of the ONO tunnel barrier was higher than that of the NON tunnel barrier during electron injection. The tunneling efficiency during the programming/erasing processes could be improved by the engineered tunnel barrier layer. Therefore, the SiC-nanocrystal-embedded memory device with an ONO tunnel barrier can be applied to nonvolatile-memory devices.

  3. Measurement of time resolution of thermoregulated SiPM for time of flight detectors

    Energy Technology Data Exchange (ETDEWEB)

    Cavazza, D.; D' Antone, I.; Foschi, E.; Guandalini, C.; Lax, I.; Levi, G.; Quadrani, L. [Department of Physics and INFN, Viale B. Pichat 4/2, 40127 Bologna (Italy); Sbarra, C., E-mail: cristina.sbarra@bo.infn.it [INFN of Padova, Via Marzolo 8, 35131 Padova (Italy); Zuffa, M. [Department of Physics and INFN, Viale B. Pichat 4/2, 40127 Bologna (Italy)

    2012-11-11

    Silicon Photomultipliers (SiPM) are considered very promising in many application where high timing performances, low cost, hardness to radiation damage and single photon counting are requested. Such applications go from astrophysics, high energy accelerator physics to medical physics. A group of SiPM from Hamamatsu has been tested with a low noise fast amplifier based on a hetero-junction FET, mounted on a proper front end board. A first telescope prototype has been used to test the electronics and results are shown. The SiPM time resolution has been measured to be {sigma}{approx}30 ps, in agreement with other studies reported in literature. The SiPM gain depends critically on temperature and a thermoelectric module to control the circuit was also studied in order to use the system for space detectors.

  4. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Science.gov (United States)

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  5. SiD Linear Collider Detector R&D, DOE Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Brau, James E. [Univ. of Oregon, Eugene, OR (United States); Demarteau, Marcel [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-05-15

    The Department of Energy’s Office of High Energy Physics supported the SiD university detector R&D projects in FY10, FY11, and FY12 with no-cost extensions through February, 2015. The R&D projects were designed to advance the SiD capabilities to address the fundamental questions of particle physics at the International Linear Collider (ILC): • What is the mechanism responsible for electroweak symmetry breaking and the generation of mass? • How do the forces unify? • Does the structure of space-time at small distances show evidence for extra dimensions? • What are the connections between the fundamental particles and forces and cosmology? Silicon detectors are used extensively in SiD and are well-matched to the challenges presented by ILC physics and the ILC machine environment. They are fast, robust against machine-induced background, and capable of very fine segmentation. SiD is based on silicon tracking and silicon-tungsten sampling calorimetry, complemented by powerful pixel vertex detection, and outer hadronic calorimetry and muon detection. Radiation hard forward detectors which can be read out pulse by pulse are required. Advanced calorimetry based on a particle flow algorithm (PFA) provides excellent jet energy resolution. The 5 Tesla solenoid is outside the calorimeter to improve energy resolution. PFA calorimetry requires fine granularity for both electromagnetic and hadronic calorimeters, leading naturally to finely segmented silicon-tungsten electromagnetic calorimetry. Since silicon-tungsten calorimetry is expensive, the detector architecture is compact. Precise tracking is achieved with the large magnetic field and high precision silicon microstrips. An ancillary benefit of the large magnetic field is better control of the e⁺e⁻ pair backgrounds, permitting a smaller radius beampipe and improved impact parameter resolution. Finally, SiD is designed with a cost constraint in mind. Significant advances and new capabilities have been made and

  6. Plasma-laser ion discrimination by TOF technique applied to coupled SiC detectors.

    Science.gov (United States)

    Cavallaro, Salvatore

    2018-01-01

    The rate estimation of nuclear reactions induced in high intensity laser-target interaction (≥1016 W/cm2), is strongly depending on the neutron detection efficiency and ion charge discrimination, according to particles involved in exit open-channels. Ion discrimination is basically performed by means of analysis of pits observed on track detector, which is critically dependent on calibration and/or fast TOF devices based on SiC and diamond detectors. Last setup is used to determine the ion energy and to obtain a rough estimation of yields. However, for each TOF interval, the dependence of yield from the energy deposited in the detector sensitive region, introduces a distortion in the ion spectra. Moreover, if two ion species are present in the same spectrum, the discrimination of their contribution is not attainable. In this paper a new method is described which allows to discriminate the contribution of two ion species in the wide energy range of nuclear reactions induced in laser-target interactions. The method is based on charge response of two TOF-SiC detectors, of suitable thicknesses, placed in adjacent positions. In presence of two ion species, the response of the detectors, associated with different energy losses, can determine the ion specific contribution to each TOF interval.

  7. Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

    International Nuclear Information System (INIS)

    Ghosh, Swapnadip; Kaiser, Daniel; Sinno, Talid; Bonilla, Jose; Han, Sang M.

    2015-01-01

    While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si 0.8 Ge 0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si 0.8 Ge 0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures

  8. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  9. Study Of Boosted W-Jets And Higgs-Jets With the SiFCC Detector

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Shin-Shan [Taiwan, Natl. Central U.; Chekanov, Sergei [Argonne; Gray, Lindsey [Fermilab; Kotwal, Ashutosh [Duke U.; Sen, Sourav [Duke U.; Tran, Nhan Viet [Fermilab

    2016-11-04

    We study the detector performance in the reconstruction of hadronically-decaying W bosons and Higgs bosons at very high energy proton colliders using a full GEANT4 simulation of the SiFCC detector. The W and Higgs bosons carry transverse momentum in the multi-TeV range, which results in collimated decay products that are reconstructed as a single jet. We present a measurement of the energy response and resolution of boosted W-jets and Higgs-jets and show the separation of two sub-jets within the boosted boson jet.

  10. Calibration of diffusion barrier charcoal detectors and application to radon sampling in dwellings

    International Nuclear Information System (INIS)

    Montero C, M.E.; Colmenero S, L.; Villalba, L.; Saenz P, J.; Cano J, A.; Moreno B, A.; Renteria V, M.; Herrera P, E.F.; Cruz G, S. De la; Lopez M, A.

    2003-01-01

    Some calibration conditions of diffusion barrier charcoal canister (DBCC) detectors for measuring radon concentration in air were studied. A series of functional expressions and graphs were developed to describe relationship between radon concentration in air and the activity adsorbed in DBCC, when placed in small chambers. A semi-empirical expression for the DBCC calibration was obtained, based on the detector integration time and the adsorption coefficient of radon on activated charcoal. Both, the integration time for 10 % of DBCC of the same batch, and the adsorption coefficient of radon for the activated charcoal used in these detectors, were experimentally determined. Using these values as the calibration parameters, a semi-empirical calibration function was used for the interpretation of the radon activities in the detectors used for sampling more than 200 dwellings in the major cities of the state of Chihuahua, Mexico. (Author)

  11. Calibration of diffusion barrier charcoal detectors and application to radon sampling in dwellings

    Energy Technology Data Exchange (ETDEWEB)

    Montero C, M.E.; Colmenero S, L.; Villalba, L.; Saenz P, J.; Cano J, A.; Moreno B, A.; Renteria V, M.; Herrera P, E.F. [Cento de Investigacion en Materiales Avanzados, S. C. Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, (Mexico); Cruz G, S. De la [Facultad de Enfermeria y Nutriologia, Universidad Autonoma de Chihuahua, Av. Politecnico Nacional 2714, Chihuahua, (Mexico); Lopez M, A. [Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, 11801 Mexico D.F. (Mexico)

    2003-07-01

    Some calibration conditions of diffusion barrier charcoal canister (DBCC) detectors for measuring radon concentration in air were studied. A series of functional expressions and graphs were developed to describe relationship between radon concentration in air and the activity adsorbed in DBCC, when placed in small chambers. A semi-empirical expression for the DBCC calibration was obtained, based on the detector integration time and the adsorption coefficient of radon on activated charcoal. Both, the integration time for 10 % of DBCC of the same batch, and the adsorption coefficient of radon for the activated charcoal used in these detectors, were experimentally determined. Using these values as the calibration parameters, a semi-empirical calibration function was used for the interpretation of the radon activities in the detectors used for sampling more than 200 dwellings in the major cities of the state of Chihuahua, Mexico. (Author)

  12. A sensitive gas chromatography detector based on atmospheric pressure chemical ionization by a dielectric barrier discharge.

    Science.gov (United States)

    Kirk, Ansgar T; Last, Torben; Zimmermann, Stefan

    2017-02-03

    In this work, we present a novel concept for a gas chromatography detector utilizing an atmospheric pressure chemical ionization which is initialized by a dielectric barrier discharge. In general, such a detector can be simple and low-cost, while achieving extremely good limits of detection. However, it is non-selective apart from the use of chemical dopants. Here, a demonstrator manufactured entirely from fused silica capillaries and printed circuit boards is shown. It has a size of 75×60×25mm 3 and utilizes only 2W of power in total. Unlike other known discharge detectors, which require high-purity helium, this detector can theoretically be operated using any gas able to form stable ion species. Here, purified air is used. With this setup, limits of detection in the low parts-per-billion range have been obtained for acetone. Copyright © 2017 Elsevier B.V. All rights reserved.

  13. Charge-sensitive poly-silicon TFT amplifiers for a-Si:H pixel particle detectors

    International Nuclear Information System (INIS)

    Cho, G.; Perez-Mendez, V.; Hack, M.; Lewis, A.

    1992-04-01

    Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec

  14. Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

    Science.gov (United States)

    Skromme, B. J.; Luckowski, E.; Moore, K.; Bhatnagar, M.; Weitzel, C. E.; Gehoski, T.; Ganser, D.

    2000-03-01

    Electrical properties, including current-voltage (I-V) and capacitance-voltage (C-V) characteristics, have been measured on a large number of Ti, Ni, and Pt-based Schottky barrier diodes on 4H-SiC epilayers. Various nonideal behaviors are frequently observed, including ideality factors greater than one, anomalously low I-V barrier heights, and excess leakage currents at low forward bias and in reverse bias. The nonidealities are highly nonuniform across individual wafers and from wafer to wafer. We find a pronounced linear correlation between I-V barrier height and ideality factor for each metal, while C-V barrier heights remain constant. Electron beam induced current (EBIC) imaging strongly suggests that the nonidealities result from localized low barrier height patches. These patches are related to discrete crystal defects, which become visible as recombination centers in the EBIC images. Alternative explanations involving generation-recombination current, uniform interfacial layers, and effects related to the periphery are ruled out.

  15. Reaction channels of 6,7Li+28Si at near-barrier energies

    International Nuclear Information System (INIS)

    Pakou, A; Rusek, K; Nicolis, N G; Alamanos, N; Doukelis, G; Gillibert, A; Kalyva, G; Kokkoris, M; Lagoyannis, A; Musumarra, A; Papachristodoulou, C; Perdikakis, G; Pierroutsakou, D; Pollacco, E C; Spyrou, A; Zarkadas, Ch

    2005-01-01

    The production of α-particles in the reactions 6,7 Li+ 28 Si was studied as a means to disentangle the various reaction channels at near-barrier energies. The competition between compound and direct reactions was determined by using the shape of angular distributions and statistical model calculations. DWBA calculations were also performed to probe the various direct channels. It was found that, approaching barrier, transfer channels are the most dominant for both reactions. For 7 Li+ 28 Si d-transfer is one of the contributing channels without excluding t-transfer, while for 6 Li+ 28 Si, n-transfer and p-transfer have substantial contribution but without excluding d-transfer

  16. Defect-driven inhomogeneities in Ni /4H-SiC Schottky barriers

    Science.gov (United States)

    Tumakha, S.; Ewing, D. J.; Porter, L. M.; Wahab, Q.; Ma, X.; Sudharshan, T. S.; Brillson, L. J.

    2005-12-01

    Nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of Ni diode arrays on 4H-SiC epitaxial wafers reveals a striking correspondence between deep level defects and electrical transport measurements on a diode-by-diode basis. Current-voltage measurements display both ideal and nonideal diode characteristics due to multiple barriers within individual contacts. Near-interface DRCLS demonstrates the presence of three discrete midgap defect levels with 2.2, 2.45, and 2.65eV emission energies whose concentrations vary on a submicron scale among and within individual diodes, correlating with barrier inhomogeneity. These results also suggest that SiC native defect levels can account for the maximum range of n-type barrier heights.

  17. Ultrafast photon number resolving detector with a temperature stabilized si multi pixel photon counter

    Energy Technology Data Exchange (ETDEWEB)

    Song, Minsoo; Hong, Eugene; Won, Eunil; Yoon, Tai Hyun [Korea Univ., Seoul (Korea, Republic of)

    2008-11-15

    Quantum information science has been rapidly progressed and matured and matured thanks to the recent developments of the single photon detection technologies. Single photon detectors such as a Si avalanche photo diode(APD)in the infrared, an InGaAs/InP APD in the telecommunication band, and a super conducting transient edge sensor(TES)in the broad region of the spectrum have been widely used. Single photon detectors, however, operating at the ultraviolet to visible (370nm∼800nm)regions has not been actively investigated partly due to the lack of single photon and/or entangled photon sources and the lack of solid state single photon detectors. In this paper, we investigate the single photon detection characteristics of a Si multi pixel photon counter(MPPC), which has a high spectral responsivity between 300nm to 800nm, as a photon number resolving solid state detector. Figure 1 shows the schematic diagram of the single photon detection set up at 399nm by using a temperature stabilized Si MPPC. The output beam of the laser being properly attenuated is directed to the MPPC module, at which fixed number of photo electrons corresponding to incident individual photon are generated at Geiger mode of the Si APD pixels. The detected photo current is converted into a digital signal by using a fast analog to digital converter and a digital oscilloscope stores the time sequence of the photo currents. Figure 2 shows the accumulated charges collected by MPPC at∼10.deg.C showing a clear single photon and two photons peaks, respectively, separated by ∼5 sigma of the coincidence counts at the two output ports of a Mach Zender interferometer as a function of optical path length difference. The research was supported by Seoul R and BD program(NT070127)and by the KRISS.

  18. Ultrafast photon number resolving detector with a temperature stabilized si multi pixel photon counter

    International Nuclear Information System (INIS)

    Song, Minsoo; Hong, Eugene; Won, Eunil; Yoon, Tai Hyun

    2008-01-01

    Quantum information science has been rapidly progressed and matured and matured thanks to the recent developments of the single photon detection technologies. Single photon detectors such as a Si avalanche photo diode(APD)in the infrared, an InGaAs/InP APD in the telecommunication band, and a super conducting transient edge sensor(TES)in the broad region of the spectrum have been widely used. Single photon detectors, however, operating at the ultraviolet to visible (370nm∼800nm)regions has not been actively investigated partly due to the lack of single photon and/or entangled photon sources and the lack of solid state single photon detectors. In this paper, we investigate the single photon detection characteristics of a Si multi pixel photon counter(MPPC), which has a high spectral responsivity between 300nm to 800nm, as a photon number resolving solid state detector. Figure 1 shows the schematic diagram of the single photon detection set up at 399nm by using a temperature stabilized Si MPPC. The output beam of the laser being properly attenuated is directed to the MPPC module, at which fixed number of photo electrons corresponding to incident individual photon are generated at Geiger mode of the Si APD pixels. The detected photo current is converted into a digital signal by using a fast analog to digital converter and a digital oscilloscope stores the time sequence of the photo currents. Figure 2 shows the accumulated charges collected by MPPC at∼10.deg.C showing a clear single photon and two photons peaks, respectively, separated by ∼5 sigma of the coincidence counts at the two output ports of a Mach Zender interferometer as a function of optical path length difference. The research was supported by Seoul R and BD program(NT070127)and by the KRISS

  19. Current transport in Zn/p-Si(100) Schottky barrier diodes at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Karatas, S. [Department of Physics, Faculty of Sciences and Arts, Kahramanmaras Suetcue imam University, 46100 Kahramanmaras (Turkey)]. E-mail: skaratas@ksu.edu.tr; Altindal, S. [Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500, Ankara (Turkey); Cakar, M. [Department of Chemistry, Faculty of Sciences and Arts, Kahramanmaras Suetcue imam University, 46100 Kahramanmaras (Turkey)

    2005-03-15

    In this study, we have performed behavior of the non-ideal forward bias current-voltage (I-V) and the reverse bias capacitance-voltage (C-V) characteristics of Zn/p-Si (metal-semiconductor) Schottky barrier diode (SBDs) with thin interfacial insulator layer. The forward bias I-V and reverse bias C-V characteristics of SBDs have been studied at the temperatures range of 300-400K. SBD parameters such as ideality factor n, the series resistance (R{sub S}) determined Cheung's functions and Schottky barrier height, {phi}{sub b}, are investigated as functions of temperature. The ideality factor n and R{sub S} were strongly temperature dependent and changed linearly with temperature and inverse temperature, respectively. The zero-bias barrier heights {phi}{sub b0}(I-V) calculated from I-V measurements show an unusual behavior that it was found to increase linearly with the increasing temperature. However, the barrier height {phi}{sub b}(C-V) calculated from C-V measurements at 500kHz frequency decreased linearly with the increasing temperature. The correlation between {phi}{sub b0}(I-V) and {phi}{sub b}(C-V) barrier heights have been explained by taking into account ideality factors n and the tunneling factor ({alpha}{chi}{sup 1/2}{delta}) in the current transport mechanism. Also, the temperature dependence of energy distribution of interface state density (N{sub SS}) was determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height. The higher values of n and R{sub S} were attributed to the presence of a native insulator on Si surface and to high density of interface states localized at semiconductor-native oxide layer (Si/SiO{sub 2}) interface.

  20. Process effects on leakage current of Si-PIN neutron detectors with porous microstructure

    International Nuclear Information System (INIS)

    Yu, Baoning; Zhao, Kangkang; Yang, Taotao; Jiang, Yong; Fan, Xiaoqiang; Lu, Min; Han, Jun

    2017-01-01

    Using the technique of Microfabrication, such as deep silicon dry etching, lithography, etc. Si-PIN neutron detectors with porous microstructure have been successfully fabricated. In order to lower the leakage current, the key fabrication processes, including the Al windows opening, deep silicon etching and the porous side wall smoothing, have been optimized. The cross-section morphology and current-voltage characteristics have been measured to evaluate the microfabrication processes. With the optimized conditions presented by the measurements, a neutron detector with a leakage current density of 2.67 μA cm -2 at a bias of -20 V is obtained. A preliminary neutron irradiation test with 252 Cf neutron source has also been carried out. The neutron irradiation test shows that the neutron detection efficiency of the microstructured neutron detectors is almost 3.6 times higher than that of the planar ones. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Energy measurement and fragment identification using digital signals from partially depleted Si detectors

    Energy Technology Data Exchange (ETDEWEB)

    Pasquali, G.; Pastore, G.; Barlini, S.; Bini, M.; Poggi, G.; Stefanini, A.A.; Valdre, S. [Universita di Firenze, Dipartimento di Fisica, Sesto Fiorentino (Italy); INFN, Sezione di Firenze, Sesto Fiorentino (Italy); Le Neindre, N.; Bougault, R.; Lopez, O.; Vient, E. [ENSICAEN et Universite de Caen, LPC, IN2P3-CNRS, Caen-Cedex (France); Ademard, G.; Borderie, B.; Edelbruck, P.; Rivet, M.F.; Salomon, F. [Universite Paris-Sud 11, Institut de Physique Nucleaire, CNRS/IN2P3, Orsay cedex (France); Bonnet, E.; Chbihi, A.; Frankland, J.D.; Gruyer, D. [CEA/DSM-CNRS/IN2P3, GANIL, B.P. 5027, Caen cedex (France); Casini, G.; Olmi, A.; Piantelli, S. [INFN, Sezione di Firenze, Sesto Fiorentino (Italy); Cinausero, M.; Gramegna, F.; Marchi, T. [INFN-LNL Legnaro, Legnaro (Padova) (Italy); Duenas, J.A. [FCCEE Universidad de Huelva, Departamento de Fisica Aplicada, Huelva (Spain); Kordyasz, A. [University of Warsaw, Heavy Ion Laboratory, Warsaw (Poland); Kozik, T.; Twarog, T. [Institute of Nuclear Physics IFJ-PAN, Jagiellonian University, Krakow (Poland); Morelli, L. [INFN, Bologna (Italy); Universita di Bologna, Bologna (Italy); Ordine, A. [INFN, Sezione di Napoli, Napoli (Italy); Parlog, M. [ENSICAEN et Universite de Caen, LPC, IN2P3-CNRS, Caen-Cedex (France); ' ' Horia Hulubei' ' National Institute of Physics and Nuclear Engineering, Bucharest (Romania); Rosato, E.; Spadaccini, G. [INFN, Sezione di Napoli, Napoli (Italy); Universita di Napoli ' ' Federico II' ' , Dipartimento di Fisica, Napoli (Italy); Alba, R.; Maiolino, C.; Santonocito, D. [INFN-LNS Catania, Catania (Italy); Collaboration: FAZIA Collaboration

    2014-05-15

    A study of identification properties of a Si-Si ΔE-E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias voltages have been used, one corresponding to full depletion, the others associated with a depleted layer ranging from 90% to 60% of the detector thickness. Fragment identification has been performed using either the ΔE-E technique or the Pulse Shape Analysis (PSA). Both detectors are reverse mounted: particles enter from the low field side, to enhance the PSA performance. The achieved charge and mass resolution has been quantitatively expressed using a Figure of Merit (FoM). Charge collection efficiency has been evaluated and the possibility of energy calibration corrections has been considered. We find that the ΔE-E performance is not affected by incomplete depletion even when only 60% of the wafer is depleted. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds are higher than at full depletion. Good isotopic identification via PSA has been obtained from a partially depleted detector, whose doping uniformity is not good enough for isotopic identification at full depletion. (orig.)

  2. Characteristics of fabricated si PIN-type radiation detectors on cooling temperature

    Science.gov (United States)

    Kim, Han Soo; Jeong, Manhee; Kim, Young Soo; Lee, Dong Hun; Cho, Seung Yeon; Ha, Jang Ho

    2015-06-01

    Si PIN photodiode radiation detectors with three different active areas (3×3 mm2, 5×5 mm2, and 10×10 mm2) were designed and fabricated at the Korea Atomic Energy Research Institute (KAERI) for low energy X- and gamma-ray detection. In Si-based semiconductor radiation detectors, one of the noise sources is thermal noise, which degrades their energy resolution performance. In this study, the temperature effects on the energy resolution were investigated using a 3×3 mm2 active area PIN photodiode radiation detector using a Thermoelectric Module (TEM) from room temperature to -23 °C. Energy resolutions from 25 keV auger electrons to 81 keV gamma-ray from a Ba-133 calibration source were measured and compared at every 10 °C interval. At -23 °C, energy resolutions were improved by 15.6% at 25 keV, 4.0% at 31 keV, and 1.2% at 81 keV in comparison with resolutions at room temperature. CsI(Tl)/PIN photodiode radiation detectors were also fabricated for relatively high energy gamma-ray detection. Energy resolutions for Cs-137, Co-60, and Na-22 sources were measured and compared with the spectral responsivity.

  3. Fast neutron detection at near-core location of a research reactor with a SiC detector

    Science.gov (United States)

    Wang, Lei; Jarrell, Josh; Xue, Sha; Tan, Chuting; Blue, Thomas; Cao, Lei R.

    2018-04-01

    The measurable charged-particle produced from the fast neutron interactions with the Si and C nucleuses can make a wide bandgap silicon carbide (SiC) sensor intrinsically sensitive to neutrons. The 4H-SiC Schottky detectors have been fabricated and tested at up to 500 °C, presenting only a slightly degraded energy resolution. The response spectrum of the SiC detectors were also obtained by exposing the detectors to external neutron beam irradiation and at a near-core location where gamma-ray field is intense. The fast neutron flux of these two locations are ∼ 4 . 8 × 104cm-2 ṡs-1 and ∼ 2 . 2 × 107cm-2 ṡs-1, respectively. At the external beam location, a Si detector was irradiated side-by-side with SiC detector to disjoin the neutron response from Si atoms. The contribution of gamma ray, neutron scattering, and charged-particles producing reactions in the SiC was discussed. The fast neutron detection efficiencies were determined to be 6 . 43 × 10-4 for the external fast neutron beam irradiation and 6 . 13 × 10-6 for the near-core fast neutron irradiation.

  4. Simulation, image reconstruction and SiPM characterisation for a novel endoscopic positron emission tomography detector

    International Nuclear Information System (INIS)

    Zvolsky, Milan

    2017-12-01

    In the scope of the EndoTOFPET-US project, a novel multimodal device for ultrasound (US) endoscopy and positron emission tomography (PET) is being developed. The project aims at detecting and quantifying morphologic and functional biomarkers and developing new biomarkers for pancreas and prostate oncology. The detector system comprises a small detector probe mounted on an ultrasound endoscope and an external detector plate. The detection of the gamma rays is realised by scintillator crystals with Silicon Photomultiplier (SiPM) read-out. For the characterisation of over 4000 SiPMs for the external plate, an automatised measurement and data analysis procedure is established. The key properties of the SiPMs like breakdown voltage and dark count rate (DCR) are extracted. This knowledge is needed both as a quality assurance as well as for the calibration of the detector. The spread between minimum and maximum breakdown voltage within a SiPM array of 4 x 4 is at maximum 0.43 V with a mean of 0.15 V and an RMS of 0.06 V. This assures the optimal biasing of each SiPM at its individual operating voltage. The mean DCR amounts to 1.49 MHz with an RMS of 0.54 MHz and is thus well below the acceptable threshold of 3 MHz. Two spare modules from the external plate are re-measured and analysed several years after the module assembly, revealing a potential alteration of the SiPM noise properties over time. For the characterisation of SiPMs from different vendors, a software framework for the automatic extraction of performance parameters from pulseheight spectra, including a t of the entire spectrum, is developed and tested. In order to facilitate the modelling of the response of the EndoTOFPET-US detector, a framework is developed which is built around the Geant4-based simulation toolkit GAMOS, to simulate and reconstruct realistic imaging scenarios with this asymmetric PET detector. The simulation studies are used to compare different possible detector designs, guide the

  5. Performance of a SiPM based semi-monolithic scintillator PET detector

    Science.gov (United States)

    Zhang, Xianming; Wang, Xiaohui; Ren, Ning; Kuang, Zhonghua; Deng, Xinhan; Fu, Xin; Wu, San; Sang, Ziru; Hu, Zhanli; Liang, Dong; Liu, Xin; Zheng, Hairong; Yang, Yongfeng

    2017-10-01

    A depth encoding PET detector module using semi-monolithic scintillation crystal single-ended readout by a SiPM array was built and its performance was measured. The semi-monolithic scintillator detector consists of 11 polished LYSO slices measuring 1  ×  11.6  ×  10 mm3. The slices are glued together with enhanced specular reflector (ESR) in between and outside of the slices. The bottom surface of the slices is coupled to a 4  ×  4 SiPM array with a 1 mm light guide and silicon grease between them. No reflector is used on the top surface and two sides of the slices to reduce the scintillation photon reflection. The signals of the 4  ×  4 SiPM array are grouped along rows and columns separately into eight signals. Four SiPM column signals are used to identify the slices according to the center of the gravity of the scintillation photon distribution in the pixelated direction. Four SiPM row signals are used to estimate the y (monolithic direction) and z (depth of interaction) positions according to the center of the gravity and the width of the scintillation photon distribution in the monolithic direction, respectively. The detector was measured with 1 mm sampling interval in both the y and z directions with electronic collimation by using a 0.25 mm diameter 22Na point source and a 1  ×  1  ×  20 mm3 LYSO crystal detector. An average slice based energy resolution of 14.9% was obtained. All slices of 1 mm thick were clearly resolved and a detector with even thinner slices could be used. The y positions calculated with the center of gravity method are different for interactions happening at the same y, but different z positions due to depth dependent edge effects. The least-square minimization and the maximum likelihood positioning algorithms were developed and both methods improved the spatial resolution at the edges of the detector as compared with the center of gravity method. A mean absolute error

  6. Time over threshold readout method of SiPM based small animal PET detector

    International Nuclear Information System (INIS)

    Valastyan, I.; Gal, J.; Hegyesi, G.; Kalinka, G.; Nagy, F.; Kiraly, B.; Imrek, J.; Molnar, J.

    2012-01-01

    Complete text of publication follows. The aim of the work was to design a readout concept for silicon photomultiplier (SiPM) sensor array used in small animal PET scanner. The detector module consist of LYSO 35x35 scintillation crystals, 324 SiPM sensors (arranged in 2x2 blocks and those quads in a 9x9 configuration) and FPGA based readout electronics. The dimensions of the SiPM matrix are area: 48x48 mm 2 and the size of one SiPM sensor is 1.95x2.2 mm 2 . Due to the high dark current of the SiPM, conventional Anger based readout method does not provide sufficient crystal position maps. Digitizing the 324 SiPM channels is a straightforward way to obtain proper crystal position maps. However handling hundreds of analogue input channels and the required DSP resources cause large racks of data acquisition electronics. Therefore coding of the readout channels is required. Proposed readout method: The coding of the 324 SiPMs consists two steps: Step 1) Reduction of the channels from 324 to 36: Row column readout, SiPMs are connected to each other in column by column and row-by row, thus the required channels are 36. The dark current of 18 connected SiPMs is small in off for identifying pulses coming from scintillating events. Step 2) Reduction of the 18 rows and columns to 4 channels: Comparators were connected to each rows and columns, and the level was set above the level of dark noise. Therefore only few comparators are active when scintillation light enters in the tile. The output of the comparator rows and columns are divided to two parts using resistor chains. Then the outputs of the resistor chains are digitized by a 4 channel ADC. However instead of the Anger method, time over threshold (ToT) was used. Figure 1 shows the readout concept of the SiPM matrix. In order to validate the new method and optimize the front-end electronics of the detector, the analogue signals were digitized before the comparators using a CAEN DT5740 32 channel digitizer, then the

  7. Extracting information from partially depleted Si detectors with digital sampling electronics

    Directory of Open Access Journals (Sweden)

    Pastore G.

    2015-01-01

    Full Text Available A study of the identification properties and of the energy response of a Si-Si-CsI(Tl ΔE-E telescope exploiting a partially depleted second Si stage has been performed. Five different bias voltages have been applied to the second stage of the telescope, one corresponding to full depletion, the others associated with a depleted layer ranging from 60% to 90% of the detector thickness. Fragment identification has been obtained using either the ΔE-E technique or the Pulse Shape Analysis (PSA. Charge collection efficiency has been evaluated. The ΔE-E performance is not affected by incomplete depletion. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds increase.

  8. Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra...

  9. Ru Schottky barrier contacts to n- and p-type 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Samiji, M.E.; Wyk, E. van; Wu, L.; Leitch, A.W.R. [Port Elizabeth Univ. (South Africa). Dept. of Physics; Venter, A. [Vista Univ., Port Elizabeth (South Africa). Dept. of Physics

    2001-07-01

    We have investigated the formation of ruthenium Schottky contacts on both n- and p-type 6H-SiC wafers. It is found that Ru forms good quality rectifying contacts, with barrier heights of 0.67 eV and 1.06 eV for n-type and p-type SiC, respectively and ideality factors in the range 1.4 - 1.6. Annealing experiments indicated that the Ru Schottky contacts remained stable up to 450 C, above which a general deterioration in the quality of the contacts (as indicated by an increase in the measured idealities as well as an increase in the reverse bias leakage currents) was observed. It is also shown that the Ru Schottky contact to p-type SiC provides an excellent means through which to introduce hydrogen into the SiC using a hydrogen plasma. (orig.)

  10. Performance of mid-wave T2SL detectors with heterojunction barriers

    Science.gov (United States)

    Asplund, Carl; Marcks von Würtemberg, Rickard; Lantz, Dan; Malm, Hedda; Martijn, Henk; Plis, Elena; Gautam, Nutan; Krishna, Sanjay

    2013-07-01

    A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric transmission window. The layers in the barrier region comprised AlSb, GaSb and InAs, and the thicknesses were selected by using k · P-based energy band modeling to achieve maximum valence band offset, while maintaining close to zero conduction band discontinuity in a way similar to the work of Abdollahi Pour et al. [1] The barrier-structure has a 50% cutoff at 4.75 μm and 40% quantum efficiency and shows a dark current density of 6 × 10-6 A/cm2 at -0.05 V bias and 120 K. This is one order of magnitude lower than for comparable T2SL-structures without the barrier. Further improvement of the (non-surface related) bulk dark current can be expected with optimized doping of the absorber and barrier, and by fine tuning of the barrier layer design. We discuss the effect of barrier doping on dark current based on simulations. A T2SL focal plane array with 320 × 256 pixels, 30 μm pitch and 90% fill factor was processed in house using a conventional homojunction p-i-n photodiode architecture and the ISC9705 readout circuit. High-quality imaging up to 110 K was demonstrated with the substrate fully removed.

  11. Project and construction of a spectrometer for alpha particles using surface barrier detectors

    International Nuclear Information System (INIS)

    Terini, R.A.

    1986-01-01

    The project, construction, tests and some applications of a system for alpha and beta spectrometry, using surface barrier detector are described. The device includes a solid state detector ORTEC-Series F coupled to a system for amplifying the charges produced by passage of an ionizing particle through the detector. The amplifying system is composed by a charge sensitive pre-amplifier, which employs an operational amplifier CA 3140, and a low noise linear amplifier, which is based on the operational amplifiers CA 3140 and LM 301. The pre-amplifier stage input impedance is on the order of TΩ and produces output pulses which heights are proportional to total charge produced by passage of particle through the detector sensitive volume. The main advantage to use charge sensitive system lies in obtention of independent pulse heights of the distributed capacity of connecting cable between the detector and the pre-amplifier. The total system amplification ca reach a maximum of 50.000 in the linear region. Pulses are analysed in a multichannel system ORTEC, model 6240. The amplifier system is easily constructed and low cost using components available in the national market, and it can be employed with ionization chambers, proportional counters, scitillation counters and semiconductor detectors. The results of spectrometer application for alpha spectrometry of AM 241 source were compared to systems made with imported stages. (Author) [pt

  12. Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

    Directory of Open Access Journals (Sweden)

    V. Naval

    2010-01-01

    Full Text Available Wide-bandgap semiconductors such as zinc selenide (ZnSe have become popular for ultraviolet (UV photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm and UV-B (280–320 nm filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.

  13. Calibration of the E Si detector in a DE-E telescope with a ^212Pb pin source

    Science.gov (United States)

    Chan, Ka Pang

    2012-10-01

    In nuclear physics experiments, telescopes composed of two or more large area silicon strip detectors are used to identify charged particles. To use the energy loss method for particle identification, a thin (˜0.065mm) silicon detector (DE) is mounted in front of a thicker E detector (˜1.5 mm). The DE Si detector can be calibrated with 8.785, 6.778, 6.288, 5.685 and 5.423 MeV alpha particles emitted from a ^228Th source. However, this method cannot be used to calibrate the E detector as the alpha particles cannot penetrate the front DE detector. We have developed a method to calibrate the E detector by inserting a small irradiated dowel pin between the two Si detectors. The pin source is electroplated with ^212Pb nuclei which emit alpha particles with 8.785 MeV, 6.090 and 6.051 MeV. Insertion of the dowel pin is designed and guided so that the head of the pin lies near the center of the detector at a distance of 2.72 mm away from the surface of the E detector. In addition to providing two strong alpha peaks for calibrations, the close distance and high pixilation of the E detector allows accurate determination of the front dead layer of the E Si strip detector. This technique has been implemented successfully in calibrating the E Si detectors in the NSCL High Resolution Array (HiRA) consisting of 20 closely pack DE-E-CsI telescopes.

  14. Studies of SiPM photosensors for time-of-flight detectors within PANDA at FAIR

    International Nuclear Information System (INIS)

    Gruber, L.

    2014-01-01

    The PANDA experiment at FAIR is a planned particle physics experiment dedicated to strong interaction studies using proton-antiproton annihilations. The PANDA time-of-flight (TOF) system is foreseen as a Scintillator Tile (SciTil) Hodoscope, which will deliver valuable input for event timing and particle identification. The proposed detector is based on small plastic scintillator tiles with a size of about 30 x 30 x 5 mm 3 , which are read-out with directly attached Silicon Photomultipliers (SiPMs). The whole system is composed of 5760 scintillator tiles and twice the number of photodetectors, covering an area of about 5.2 m 2 in total. The requirements for the detector are a time resolution in the order of 100 ps sigma and a minimum use of material due to the limited space inside the PANDA spectrometer. SiPMs are extremely versatile photodetectors which tend to successively replace the ordinary vacuum Photomultiplier Tubes (PMTs) in many of the photosensing demands ranging from particle physics to medical imaging. Due to many advantages like good time resolution, high photon detection efficiency (PDE), compactness, low operating voltage, radiation hardness, low cost and, in contrast to PMTs, insensitivity to magnetic fields, SiPMs are well suited for applications in high energy physics like PANDA. Recently, Philips invented the first fully digital SiPM (DPC), which allows to exploit the quasi digital nature of single photon detection. The analog and digital SiPM, respectively, are the main detector technologies used within this work. This thesis describes a detailed study of SiPM properties in order to characterize the new devices and get a profound understanding of their functionality. The characterization studies have been carried out using various experimental setups employing pulsed pico- and femtosecond lasers. With regard to applications in high energy physics experiments, e.g. the PANDA TOF system, parameters like SiPM gain, dark count rate, time resolution

  15. The strain effect in the surface barrier structures prepared on the basis of n-Si and p-Si

    International Nuclear Information System (INIS)

    Mamatkarimov, O.O.; Tuychiev, U.A.

    2004-01-01

    Full text: One of the ways of creation of large deformations in small volume of the semiconductor is the deformation created by a needle. At insignificant change of external influence the large deformation under a needle in small volume of the semiconductor the significant change of electrophysical parameters of the semiconductor in small volume is created. Therefore, in the present work the results of researches of local pressure influence on physical properties of surface barrier structures has been performed on the basis of silicon with Ni and Mn impurity. The relative changes of a direct current made on the basis n-Si and p-Si from a different degree of compensation are given depending on size of local pressure are shown. Change of current in structures Au-Si -Sb with specific resistance of base ρ=80 Ω·cm and ρ=200 Ω·cm are I p /I 0 =3-3.5 times and I P /I ) =2-2.5 times at pressure P=1.6·10 8 Pa respectively. These data show, that in structures received on the basis of initial silicon, change of a direct current with pressure is in inverse proportion to size of resistance of base of the diode. And in structures Au-Si -Sb with specific resistance of base ρ=5·10 2 Ω·cm and ρ=3·10 3 Ω·cm these changes accordingly are I P /I 0 =7 and I P /I 0 =14. Changes of direct current relative to initial value for structures on the basis p-Si with specific resistance ρ=7·10 2 Ω·cm and ρ=4·10 3 Ω·cm) are I P /I 0 =9 and I P /I 0 =16 respectively. The same changes of direct current of structures on the basis P-Si at local pressure are I P /I 0 =2-2.5. The given values I P /I 0 testify that as in structures Au-Si -Sb, and structures Sb-p-Si -Au, unlike structures on the basis of initial silicon, the values I P /I 0 are increased with increase of specific resistance of base of structures

  16. 3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for charged particle detection

    Science.gov (United States)

    Vignetti, M. M.; Calmon, F.; Pittet, P.; Pares, G.; Cellier, R.; Quiquerez, L.; Chaves de Albuquerque, T.; Bechetoille, E.; Testa, E.; Lopez, J.-P.; Dauvergne, D.; Savoy-Navarro, A.

    2018-02-01

    Single-Photon Avalanche Diodes (SPADs) are p-n junctions operated in Geiger Mode by applying a reverse bias above the breakdown voltage. SPADs have the advantage of featuring single photon sensitivity with timing resolution in the picoseconds range. Nevertheless, their relatively high Dark Count Rate (DCR) is a major issue for charged particle detection, especially when it is much higher than the incoming particle rate. To tackle this issue, we have developed a 3D Silicon Coincidence Avalanche Detector (3D-SiCAD). This novel device implements two vertically aligned SPADs featuring on-chip electronics for the detection of coincident avalanche events occurring on both SPADs. Such a coincidence detection mode allows an efficient discrimination of events related to an incoming charged particle (producing a quasi-simultaneous activation of both SPADs) from dark counts occurring independently on each SPAD. A 3D-SiCAD detector prototype has been fabricated in CMOS technology adopting a 3D flip-chip integration technique, and the main results of its characterization are reported in this work. The particle detection efficiency and noise rejection capability for this novel device have been evaluated by means of a β- strontium-90 radioactive source. Moreover the impact of the main operating parameters (i.e. the hold-off time, the coincidence window duration, the SPAD excess bias voltage) over the particle detection efficiency has been studied. Measurements have been performed with different β- particles rates and show that a 3D-SiCAD device outperforms single SPAD detectors: the former is indeed capable to detect particle rates much lower than the individual DCR observed in a single SPAD-based detectors (i.e. 2 to 3 orders of magnitudes lower).

  17. Annealing temperature effect on electrical characteristics of Co/p-type Si Schottky barrier diodes

    Energy Technology Data Exchange (ETDEWEB)

    Gueler, G. [Department of Physics, Faculty of Education, Adiyaman University, Adiyaman (Turkey); Karatas, S., E-mail: skaratas@ksu.edu.t [Department of Physics, Faculty of Sciences and Arts, University of Kahramanmaras Suetcue Imam, 46100 Kahramanmaras (Turkey); Bakkaloglu, O.F. [Department of Engineering Physics, Faculty of Engineering, University of Gaziantep, 27310 Gaziantep (Turkey)

    2009-05-01

    The electrical characteristics of Co/p-type Si Schottky barrier diodes (SBDs), which were formed at various annealing temperatures from 200 to 600 deg. C, were investigated using current-voltage (I-V) techniques. The Schottky barrier height at 200 deg. C annealing temperature was found to be 0.708 eV (I-V). However, the Schottky barrier height of the Co/p-type Si diode slightly decreases to 0.696 eV (I-V) when the diode was annealed at 300 deg. C for 5 min in N{sub 2} atmosphere. It is noted that the Schottky barrier height increased to 0.765 eV at 400 deg. C, 0.830 eV at 500 deg. C and 0.836 eV at 600 deg. C for 5 min in N{sub 2} atmosphere. This increase was attributed to that the annealing removes the passivation effect of the native oxide layer and reactivates the surface defects which are responsible for the Fermi level pinning. Norde method was also used to extract the barrier height of Co/p-type Si Schottky barrier diodes and the values are 0.704 eV for the 200 deg. C, 0.714 eV at 300 deg. C, 0.80447 eV at 400 deg. C, 0.874 eV at 500 deg. C and 0.874 eV at 600 deg. C which are in good agreement with those obtained by the I-V method.

  18. Barrier distribution from 28Si+154Sm quasielastic scattering: Coupling effects in the fusion process

    Directory of Open Access Journals (Sweden)

    Kaur Gurpreet

    2016-01-01

    Full Text Available Barrier distribution for the 28Si+154Sm system has been extracted from large angle quasielastic scattering measurement to investigate the role of various channel couplings on fusion dynamics. The coupled channel calculations, including the collective excitation of the target and projectile, are observed to reproduce the experimental BD rather well. It seems that the role of neutron transfer, relative to collective excitation, is in fact weak in the 28Si+154Sm system even though it has positive Q-value for neutron transfer channels.

  19. Polymer-Derived Ceramics as Innovative Oxidation Barrier Coatings for Mo-Si-B Alloys

    Science.gov (United States)

    Hasemann, Georg; Baumann, Torben; Dieck, Sebastian; Rannabauer, Stefan; Krüger, Manja

    2015-04-01

    A preceramic polymer precursor, perhydropolysilazane, is used to investigate its function as a new type of oxidation barrier coating on Mo-Si-B alloys. After dip-coating and pyrolysis at 1073 K (800 °C), dense and well-adhering SiON ceramic coatings could be achieved, which were investigated by SEM and cyclic oxidation tests at 1073 K and 1373 K (800 °C and 1100 °C). The coating is promising in reducing the mass loss during the initial stage of oxidation exposure at 1373 K (1100 °C) significantly.

  20. Optimized design of 4H-SiC floating junction power Schottky barrier diodes

    Science.gov (United States)

    Hongbin, Pu; Lin, Cao; Zhiming, Chen; Jie, Ren

    2009-04-01

    SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics. Compared with the conventional power Schottky barrier diode, the device structure is featured by a highly doped drift region and embedded floating junction region, which can ensure high breakdown voltage while keeping lower specific on-state resistance, solved the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4 kV and the specific on-resistance is 8.3 mΩ·cm2.

  1. Optimized design of 4H-SiC floating junction power Schottky barrier diodes

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Chen Zhiming; Ren Jie

    2009-01-01

    SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics. Compared with the conventional power Schottky barrier diode, the device structure is featured by a highly doped drift region and embedded floating junction region, which can ensure high breakdown voltage while keeping lower specific on-state resistance, solved the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4 kV and the specific on-resistance is 8.3 mΩ·cm 2 .

  2. Growth and performance of superlattice-based long wavelength complementary barrier infrared detectors (CBIRDs)

    Science.gov (United States)

    Hill, Cory J.; Soibel, Alexander; Keo, Sam A.; Lee, Michael C.; Mumolo, Jason M.; Nguyen, Jean; Rafol, B., Sir; Ting, David Z.; Yang, Baohua; Gunapala, Sarath D.

    2010-04-01

    We have demonstrated the use of bulk antimonide based materials and type-II antimonide based superlattices in the development large area long wavelength infrared (LWIR) focal plane arrays (FPAs). Barrier infrared photodetectors (BIRDS) and superlattice-based infrared photodetectors are expected to outperform traditional III-V MWIR and LWIR imaging technologies and are expected to offer significant advantages over II-VI material based FPAs. Our group has developed a novel complementary barrier infrared detector (CBIRD) which utilizes properties unique to the antimonide material system to incorporate unipolar barriers on either side of a superlattice absorber region. We have used molecular beam epitaxy (MBE) technology to grow InAs/GaSb CBIRD structures on large area 100mm GaSb substrates with excellent results. Furthermore, we have fabricated initial 1024x1024 pixels superlattice imaging FPAs based on the CBIRD concept.

  3. Signal and noise analysis of a-Si:H radiation detector-amplifier system

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gyuseong [Univ. of California, Berkeley, CA (United States)

    1992-03-01

    Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was ~400 MHz and the noise charge ~1000 electrons at a 1 μsec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of ~0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

  4. Signal and noise analysis of a-Si:H radiation detector-amplifier system

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Gyuseong.

    1992-03-01

    Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was {approximately}400 MHz and the noise charge {approximately}1000 electrons at a 1 {mu}sec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of {approximately}0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

  5. SiPMs characterization and selection for the DUNE far detector photon detection system

    Science.gov (United States)

    Sun, Y.; Maricic, J.

    2016-01-01

    The Deep Underground Neutrino Experiment (DUNE) together with the Long Baseline Neutrino Facility (LBNF) hosted at the Fermilab will provide a unique, world-leading program for the exploration of key questions at the forefront of neutrino physics and astrophysics. CP violation in neutrino flavor mixing is one of its most important potential discoveries. Additionally, the experiment will determine the neutrino mass hierarchy and precisely measure the neutrino mixing parameters which may potentially reveal new fundamental symmetries of nature. Moreover, the DUNE is also designed for the observation of nucleon decay and supernova burst neutrinos. The photon detection (PD) system in the DUNE far detector provides trigger for cosmic backgrounds, enhances supernova burst trigger efficiency and improves the energy resolution of the detector. The DUNE adopts the technology of liquid argon time projection chamber (LArTPC) that requires the PD sensors, silicon photomultipliers (SiPM), to be carefully chosen to not only work properly in LAr temperature, but also meet certain specifications for the life of the experiment. A comprehensive testing of SiPMs in cryostat is necessary since the datasheet provided by the manufactures in the market does not cover this temperature regime. This paper gives the detailed characterization results of SenSL C-Series 60035 SiPMs, including gain, dark count rate (DCR), cross-talk and after-pulse rate. Characteristic studies on SiPMs from other vendors are also discussed in order to avoid any potential problems associated with using a single source. Moreover, the results of the ongoing mechanical durability tests are shown for the current candidate, SenSL B/C-Series 60035 SiPMs.

  6. Development of an ASIC for Si/CdTe detectors in a radioactive substance visualizing system

    Science.gov (United States)

    Harayama, Atsushi; Takeda, Shin`ichiro; Sato, Goro; Ikeda, Hirokazu; Watanabe, Shin; Takahashi, Tadayuki

    2014-11-01

    We report on the recent development of a 64-channel analog front-end ASIC for a new gamma-ray imaging system designed to visualize radioactive substances. The imaging system employs a novel Compton camera which consists of silicon (Si) and cadmium telluride (CdTe) detectors. The ASIC is intended for the readout of pixel/pad detectors utilizing Si/CdTe as detector materials, and covers a dynamic range up to 1.4 MeV. The readout chip consists of 64 identical signal channels and was implemented with X-FAB 0.35 μm CMOS technology. Each channel contains a charge-sensitive amplifier, a pole-zero cancellation circuit, a low-pass filter, a comparator, and a sample-hold circuit, along with a Wilkinson-type A-to-D converter. We observed an equivalent noise charge of 500 e- and a noise slope of 5 e-/pF (r.m.s.) with a power consumption of 2.1 mW per channel. The chip works well when connected to Schottky CdTe diodes, and delivers spectra with good energy resolution, such as 12 keV (FWHM) at 662 keV and 24 keV (FWHM) at 1.33 MeV.

  7. Design and development of position sensitive detector for hard x-ray using SiPM and new generation scintillators

    Science.gov (United States)

    Goyal, S. K.; Naik, Amisha P.; N. P. S., Mithun; Vadawale, S. V.; Tiwari, Neeraj K.; Chattopadhyay, T.; Nagrani, N.; Madhavi, S.; Ladiya, T.; Patel, A. R.; Shanmugam, M.; Adalja, H. L.; Patel, V. R.; Ubale, G. P.

    2017-08-01

    There is growing interest in high-energy astrophysics community for the development of sensitive instruments in the hard X-ray energy extending to few hundred keV. This requires position sensitive detector modules with high efficiency in the hard X-ray energy range. Here, we present development of a detector module, which consists of 25 mm x 25 mm CeBr3 scintillation detector, read out by a custom designed two dimensional array of Silicon Photo-Multipliers (SiPM). Readout of common cathode of SiPMs provides the spectral measurement whereas the readout of individual SiPM anodes provides measurement of interaction position in the crystal. Preliminary results for spectral and position measurements with the detector module are presented here.

  8. CMOS front end analog signal readout chip for Si-strip/PIN detectors

    International Nuclear Information System (INIS)

    Chandratre, V.B.; Sardesai, S.V.; Kataria, S.K.

    2001-01-01

    The paper presents the design of an 8-channel front-end chip for Si-strip detectors, ranging in capacitance from 1 to 30 pf. Each channel consists of a charge amplifier, a shaper amplifier (CR-RC 3 ) and a track-hold stage. The channel outputs are connected to an analog multiplexer which is controlled by an external clock for serial readout. The peaking time is adjustable over 250ns-2us in four fixed steps by external control. There is provision for changing gain low/high. A derivative of the chip is also developed for dosimeter application that uses small area diodes as detectors. The circuit has a power dissipation of 6 MW per channel and is designed to fabricate in 1.2um CMOS technology. The Opf noise is ∼400e. The design approach is presented and the results of simulation are shown. (author)

  9. Test of a SiPM-scintillator-based muon detector at the Gran Sasso National Laboratory

    Science.gov (United States)

    Stark, I.; Könye, V.; Antolini, R.; Arneodo, F.; Boeltzig, A.; Candela, A.; Di Giovanni, A.; Fülöp, Zs; Junker, M.

    2018-01-01

    The aim of the present work was to determine the characteristics of a tracking scintillation detector by measuring cosmic muons above- and underground at the Gran Sasso National Laboratory (LNGS). The detector has been designed for demonstrational purposes and had never been involved in scientific research before. It is a compact, layered detector using plastic scintillator bars and silicon photomultipliers (SiPM). In the present setup no energy information is used. In the underground laboratory we had to deal with a very low rate of muons (6 orders of magnitude less than on the surface). For this reason we optimized the trigger configuration. During the evaluation process we designed and optimized a maximum likelihood line fitting method which is able to deal with the high dark count rate and the non optimized detection efficiency of the detector. We also carried out simulations to calculate the actual flux and intensity from the measured ones. Finally, we compared our results with the literature and they were found to be in agreement.

  10. Development of Advanced Environmental Barrier Coatings for SiC/SiC Ceramic Matrix Composites: Path Toward 2700 F Temperature Capability and Beyond

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan; Hurst, Janet B.; Good, Brian; Costa, Gustavo; Bhatt, Ramakrishna T.; Fox, Dennis S.

    2017-01-01

    Advanced environmental barrier coating systems for SiC-SiC Ceramic Matrix Composite (CMC) turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant coating development challenges is to achieve prime-reliant environmental barrier coating systems to meet the future 2700F EBC-CMC temperature stability and environmental durability requirements. This presentation will emphasize recent NASA environmental barrier coating system testing and down-selects, particularly the development path and properties towards 2700-3000F durability goals by using NASA hafnium-hafnia-rare earth-silicon-silicate composition EBC systems for the SiC-SiC CMC turbine component applications. Advanced hafnium-based compositions for enabling next generation EBC and CMCs capabilities towards ultra-high temperature ceramic coating systems will also be briefly mentioned.

  11. High resolution detectors based on continuous crystals and SiPMs for small animal PET

    International Nuclear Information System (INIS)

    Cabello, J.; Barrillon, P.; Barrio, J.; Bisogni, M.G.; Del Guerra, A.; Lacasta, C.; Rafecas, M.; Saikouk, H.; Solaz, C.; Solevi, P.; La Taille, C. de; Llosá, G.

    2013-01-01

    Sensitivity and spatial resolution are the two main factors to maximize in emission imaging. The improvement of one factor deteriorates the other with pixelated crystals. In this work we combine SiPM matrices with monolithic crystals, using an accurate γ-ray interaction position determination algorithm that provides depth of interaction. Continuous crystals provide higher sensitivity than pixelated crystals, while an accurate interaction position determination does not degrade the spatial resolution. Monte Carlo simulations and experimental data show good agreement both demonstrating sub-millimetre intrinsic spatial resolution. A system consisting in two rotating detectors in coincidence is currently under operation already producing tomographic images

  12. Barrier controlled carrier trapping of extended defects in CdZnTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Rongrong [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Jie, Wanqi, E-mail: jwq@nwpu.edu.cn [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Xu, Yadong [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Yu, Hui; Zha, Gangqiang; Wang, Tao; Ren, Jie [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China)

    2015-09-11

    Transient current techniques using alpha particle source were utilized to study the influence of extended defects on the electron drift time and the detector performance of CdZnTe crystals. Different from the case of trapping through isolated point defect, a barrier controlled trapping model was used to explain the mechanism of carrier trapping at the extended defects. The effect of extended defects on the photoconductance was studied by laser beam induced transient current (LBIC) measurement. The results demonstrate that the Schottky-type depletion space charge region is induced at the vicinity of the extended defects, which further distorts the internal electric field distribution and affects the carrier trajectory in CdZnTe crystals. The relationship between the electron drift time and detector performance has been established. - Highlights: • The barrier controlled trapping model was developed around extended defects. • Electron mobility and E-field distribution were distorted by space charge depletion region. • Extended defects act as a recombination-activated region. • The relationships between extended defects and detector performance were established.

  13. Monte Carlo semi-empirical model for Si(Li) x-ray detector: Differences between nominal and fitted parameters

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Pino, N.; Padilla-Cabal, F.; Garcia-Alvarez, J. A.; Vazquez, L.; D' Alessandro, K.; Correa-Alfonso, C. M. [Departamento de Fisica Nuclear, Instituto Superior de Tecnologia y Ciencias Aplicadas (InSTEC) Ave. Salvador Allende y Luaces. Quinta de los Molinos. Habana 10600. A.P. 6163, La Habana (Cuba); Godoy, W.; Maidana, N. L.; Vanin, V. R. [Laboratorio do Acelerador Linear, Instituto de Fisica - Universidade de Sao Paulo Rua do Matao, Travessa R, 187, 05508-900, SP (Brazil)

    2013-05-06

    A detailed characterization of a X-ray Si(Li) detector was performed to obtain the energy dependence of efficiency in the photon energy range of 6.4 - 59.5 keV, which was measured and reproduced by Monte Carlo (MC) simulations. Significant discrepancies between MC and experimental values were found when the manufacturer parameters of the detector were used in the simulation. A complete Computerized Tomography (CT) detector scan allowed to find the correct crystal dimensions and position inside the capsule. The computed efficiencies with the resulting detector model differed with the measured values no more than 10% in most of the energy range.

  14. Coincidence system for absolute measuring of radionuclide activity using surface barrier detectors

    International Nuclear Information System (INIS)

    Koskinas, M.F.; Dias, M.S.

    1986-01-01

    A system for the standardization of alpha-gamma radionuclides has been developed at IPEN. Two surface barrier detectors are coupled to two thin-window NaI(Tl) crystals, suitable for low energy gamma ray detection. The performance of the system has been verified by means of the standardization of a Am-241 solution. The absolute activity has been obtained using the extrapolation method applied to the 4πα-γ coincidence technique. The alpha efficiency was varied by placing absorbers over the source or by changing the source to detector distance. The results were compared to those obtained by the linear extrapolation method, using a flow-gas 4π proportional counter. The agreement between the results were around 99.5%. (Author) [pt

  15. Delamination Mechanisms of Thermal and Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Choi, Sung R.; Lee, Kang N.; Miller, Robert A.

    2003-01-01

    Advanced ceramic thermal harrier coatings will play an increasingly important role In future gas turbine engines because of their ability to effectively protect the engine components and further raise engine temperatures. However, the coating durability issue remains a major concern with the ever-increasing temperature requirements. In this paper, thermal cyclic response and delamination failure modes of a ZrO2-8wt%Y2O3 and mullite/BSAS thermaVenvironmenta1 barrier coating system on SiC/SiC ceramic matrix composites were investigated using a laser high-heat-flux technique. The coating degradation and delamination processes were monitored in real time by measuring coating apparent conductivity changes during the cyclic tests under realistic engine temperature and stress gradients, utilizing the fact that delamination cracking causes an apparent decrease in the measured thermal conductivity. The ceramic coating crack initiation and propagation driving forces under the cyclic thermal loads, in conjunction with the mechanical testing results, will be discussed.

  16. Pile-up and defective pulse rejection by pulse shape discrimination in surface barrier detectors

    International Nuclear Information System (INIS)

    Sjoeland, K.A.; Kristiansson, P.

    1994-01-01

    A technique to reject pile-up pulses and defective tail pulses from surface barrier detectors by the use of pulse shape discrimination is demonstrated. The electronic implementation of the pulse shape discrimination is based upon the zero crossing technique and for data reduction multiparameter techniques are used. The characteristic τ value for pile-up rejection is shown to be less than 56 ns. Its effect on detection limits from tail reduction in Particle Elastic Scattering Analysis (PESA) and pile-up peak suppression is discussed. ((orig.))

  17. Simulations of Si-PIN photodiode based detectors for underground explosives enhanced by ammonium nitrate

    Science.gov (United States)

    Yücel, Mete; Bayrak, Ahmet; Yücel, Esra Barlas; Ozben, Cenap S.

    2018-02-01

    Massive Ammonium Nitrate (NH4-NO3) based explosives buried underground are commonly used in terror attacks. These explosives can be detected using neutron scattering method with some limitations. Simulations are very useful tools for designing a possible detection system for these kind of explosives. Geant4 simulations were used for generating neutrons at 14 MeV energy and tracking them through the scattering off the explosive embedded in soil. Si-PIN photodiodes were used as detector elements in the design for their low costs and simplicity for signal readout electronics. Various neutron-charge particle converters were applied on to the surface of the photodiodes to increase the detection efficiency. Si-PIN photodiodes coated with 6LiF provided the best result for a certain energy interval. Energy depositions in silicon detector from all secondary particles generated including photons were taken into account to generate a realistic background. Humidity of soil, one of the most important parameter for limiting the detection, was also studied.

  18. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    International Nuclear Information System (INIS)

    Beeman, J.W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.

    2013-01-01

    In germanium-based light detectors for scintillating bolometers, a SiO 2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25–35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ∼630nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82 Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO 2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials

  19. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    Science.gov (United States)

    Beeman, J. W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.

    2013-05-01

    In germanium-based light detectors for scintillating bolometers, a SiO2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25-35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ˜630 nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

  20. Influence of dopants on the glow curve structure and energy dependence of LiF:Mg,Cu,Si detectors

    International Nuclear Information System (INIS)

    Knezevic, Z.; Ranogajec-Komor, M.; Miljanic, S.; Lee, J.I.; Kim, J.L.; Music, S.

    2011-01-01

    LiF thermoluminescent material doped with Mg, Cu and Si recently developed by the Korea Atomic Energy Research Institute (KAERI) has shown very good dosimetric properties. Since the thermoluminescence in LiF was found to be dependent on the proper combination of dopants, the investigation of the concentration and type of dopants is very important in developing and characterisation of new TL materials. The aim of this work was to determine the influence of type and concentration of activators on the glow curve structure, sensitivity, reproducibility and on the photon energy response of LiF:Mg,Cu,Si detectors. The energy response was studied in air and on the ISO water phantom in the range of mean photon energies between 33 keV and 164 keV. The morphology and local chemical composition of LiF:Mg,Cu,Si detectors were examined using high resolution scanning electron microscopy (FE-SEM). The results show that type and concentration of activators influence the glow curve and sensitivity. Different dopant concentrations did not show influence on the photon energy response. The sensitivity of LiF:Mg,Cu,Si detector with dopant concentration of Mg = 0.35 mol%, Cu = 0.025 mol% and Si = 0.9 mol% was very high (up to 65 times higher than that of TLD-100). The photon energy response of LiF:Mg,Cu,Si detectors containing all three dopants in various concentrations is in accordance with the IAEA recommendations for individual monitoring.

  1. Influence of dopants on the glow curve structure and energy dependence of LiF:Mg,Cu,Si detectors

    Energy Technology Data Exchange (ETDEWEB)

    Knezevic, Z., E-mail: zknez@irb.h [Ruder Boskovic Institute, Bijenicka 54, 10000 Zagreb (Croatia); Ranogajec-Komor, M.; Miljanic, S. [Ruder Boskovic Institute, Bijenicka 54, 10000 Zagreb (Croatia); Lee, J.I.; Kim, J.L. [Korea Atomic Energy Research Institute, P.O. Box 105 Yuseong, Daejon 305-600 (Korea, Republic of); Music, S. [Ruder Boskovic Institute, Bijenicka 54, 10000 Zagreb (Croatia)

    2011-03-15

    LiF thermoluminescent material doped with Mg, Cu and Si recently developed by the Korea Atomic Energy Research Institute (KAERI) has shown very good dosimetric properties. Since the thermoluminescence in LiF was found to be dependent on the proper combination of dopants, the investigation of the concentration and type of dopants is very important in developing and characterisation of new TL materials. The aim of this work was to determine the influence of type and concentration of activators on the glow curve structure, sensitivity, reproducibility and on the photon energy response of LiF:Mg,Cu,Si detectors. The energy response was studied in air and on the ISO water phantom in the range of mean photon energies between 33 keV and 164 keV. The morphology and local chemical composition of LiF:Mg,Cu,Si detectors were examined using high resolution scanning electron microscopy (FE-SEM). The results show that type and concentration of activators influence the glow curve and sensitivity. Different dopant concentrations did not show influence on the photon energy response. The sensitivity of LiF:Mg,Cu,Si detector with dopant concentration of Mg = 0.35 mol%, Cu = 0.025 mol% and Si = 0.9 mol% was very high (up to 65 times higher than that of TLD-100). The photon energy response of LiF:Mg,Cu,Si detectors containing all three dopants in various concentrations is in accordance with the IAEA recommendations for individual monitoring.

  2. The Silicon Detector (SiD) And Linear Collider Detector R&D in Asia And North America

    Energy Technology Data Exchange (ETDEWEB)

    Brau, J.E.; /Oregon U.; Breidenbach, M.; /SLAC; Fujii, Y.; /KEK, Tsukuba

    2005-08-11

    In Asia and North America research and development on a linear collider detector has followed complementary paths to that in Europe. Among the developments in the US has been the conception of a detector built around silicon tracking, which relies heavily on a pixel (CCD) vertex detector, and employs a silicon tungsten calorimeter. Since this detector is quite different from the TESLA detector, we describe it here, along with some of the sub-system specific R&D in these regions.

  3. Process effects on leakage current of Si-PIN neutron detectors with porous microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Baoning; Zhao, Kangkang; Yang, Taotao [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Jiang, Yong; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, CAEP, Mianshan Road 64, 621900 Mianyang (China); Lu, Min [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Han, Jun [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China)

    2017-06-15

    Using the technique of Microfabrication, such as deep silicon dry etching, lithography, etc. Si-PIN neutron detectors with porous microstructure have been successfully fabricated. In order to lower the leakage current, the key fabrication processes, including the Al windows opening, deep silicon etching and the porous side wall smoothing, have been optimized. The cross-section morphology and current-voltage characteristics have been measured to evaluate the microfabrication processes. With the optimized conditions presented by the measurements, a neutron detector with a leakage current density of 2.67 μA cm{sup -2} at a bias of -20 V is obtained. A preliminary neutron irradiation test with {sup 252}Cf neutron source has also been carried out. The neutron irradiation test shows that the neutron detection efficiency of the microstructured neutron detectors is almost 3.6 times higher than that of the planar ones. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. A space qualified thermal imaging system using a Pt Si detector array

    Science.gov (United States)

    Astheimer, Robert W.

    1989-01-01

    EDO Corporation, Barnes Engineering Division designed and constructed a high resolution thermal imaging system on contract to Lockheed for use in the SDI Star Lab. This employs a Pt Si CCD array which is sensitive in the spectral range of 3 to 5 microns. Star Lab will be flown in the Shuttle bay and consists basically of a large, reflecting, tracking telescope with associated sensors and electronics. The thermal imaging system is designed to operate in the focal plane of this telescope. The configuration of the system is illustrated. The telescope provides a collimated beam output which is focussed onto the detector array by a silicon objective lens. The detector array subtends a field of view of 1.6 degrees x 1.22 degrees. A beam switching mirror permits bypassing the large telescope to give a field of 4 degrees x 3 degrees. Two 8 position filter wheels are provided, and background radiation is minimized by Narcissus mirrors. The detector is cooled with a Joule-Thompson cryostat fed from a high pressure supply tank. This was selected instead of a more convenient closed-cycle system because of concern with vibration. The latter may couple into the extremely critical Starlab tracking telescope. The electronics produce a digitized video signal for recording. Offset and responsivity correction factors are stored for all pixels and these corrections are made to the digitized output in real time.

  5. Fabrication and characterization of surface barrier detector from commercial silicon substrate; Fabricacao e caracterizacao de detector de barreira de superficie a partir de substrato de silicio comercial

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Julio Batista Rodrigues

    2016-10-01

    In this work it was developed radiation detectors silicon surface barrier that were capable of detecting the presence of gamma radiation from a low energy of iodine-125 seeds used in brachytherapy treatments. >From commercial silicon substrates detectors were developed, one sequence left of chemical treatments to the surfaces of these substrates with the intention of minimizing the possible noise generated, validation of the samples obtained as diodes, ensuring detector characteristics and effective use as detector for Iodine-125 radioactive sources with energy of about 25 keV and Americium-251 with energy on the order of 59 keV. Finished performing the analysis of the obtained energy spectra and so it was possible to observe the ability of these detectors to measure the energy from these seeds. (author)

  6. Superconducting characteristics of a MgB2 neutron detector fabricated on SiN membrane

    International Nuclear Information System (INIS)

    Miki, Shigehito; Fujiwara, Daisuke; Shimakage, Hisashi; Wang Zhen; Satoh, Kazuo; Yotsuya, Tsutomu; Ishida, Takekazu

    2006-01-01

    We report a fabrication process for membrane-structured superconducting MgB 2 neutron detectors and measurement of superconducting DC-characteristics. We prepared a MgB 2 thin film on a SiN-film-coated Si substrate using multiple-target sputtering system. The 200-nm-thick MgB 2 thin film was processed to create meandering lines by e-beam lithography technique, where the line width was 3 μm and the total length reached 6.3 mm. After the front side of the device had been fabricated, the back side of the device was etched with anisotropic Si etching using ethylene diamine pyrocatechol and etching apparatus to increase the sensitivity of the device. The membrane-structured MgB 2 device showed good performance of the transition to superconductivity, namely, a T C,onset of 26.24 K, a T C,offset of 26.02 K, ΔT c of 0.22 K, and an RRR of 1.15

  7. Development of neutron detector using sensor type surface barrier with (n,p) and (n,α) converters

    International Nuclear Information System (INIS)

    Madi Filho, Tufic

    1999-01-01

    A Si semiconductor detector, surface barrier type, with a slim film of a converter material capable to produce charged particles was used as a sensor of neutrons in an environment of a zero power reactor. Two types of converters were used to improve the detection efficiency: (1) the polyethylene, n(CH 2 ), which produces recoil protons from the (n,p) interaction and, (2) the 10 B which generates a particle from the (n,alpha) reaction. The optimal thickness of those converters was determined experimentally and specifically for the polyethylene a mathematical model R(ips) = ε p · N 0 ·(1-e -Σ·Χ ) ·e -μ ·Χ + ε n · N 0 · -Σ · Χ was used to fit to the experimental data. For the polyethylene converter the thickness was of 0.058 cm (62.64 mg.cm -2 ) while for the 10 B it was equal to 6.55 [μm (1.54 mg.cm -2 ). The converter of polyethylene or 10 B improved the detection efficiency to a factor of 4.7 and 3.0 respectively. The comparison of the spectrum of the background radiation with the spectra of the recoil protons and the a radiation from the 10 B it was concluded that the polyethylene presented better performance than the 10 B converter. (author)

  8. Development of a circular shape Si-PM-based detector ring for breast-dedicated PET system

    Science.gov (United States)

    Nakanishi, Kouhei; Yamamoto, Seiichi; Watabe, Hiroshi; Abe, Shinji; Fujita, Naotoshi; Kato, Katsuhiko

    2018-02-01

    In clinical situations, various breast-dedicated positron emission tomography (PET) systems have been used. However, clinical breast-dedicated PET systems have polygonal detector ring. Polygonal detector ring sometimes causes image artifact, so complicated reconstruction algorithm is needed to reduce artifact. Consequently, we developed a circular detector ring for breast-dedicated PET to obtain images without artifact using a simple reconstruction algorithm. We used Lu1.9Gd0.1SiO5 (LGSO) scintillator block which was made of 1.5 x 1.9 x 15 mm pixels that were arranged in an 8 x 24 matrix. As photodetectors, we used silicon photomultiplier (Si-PM) arrays whose channel size was 3 x 3 mm. A detector unit was composed of four scintillator blocks, 16 Si-PM arrays and a light guide. The developed detector unit had angled configuration since the light guide was bending. A detector unit had three gaps with an angle of 5.625° between scintillator blocks. With these configurations, we could arrange 64 scintillator blocks in nearly circular shape (regular 64-sided polygon) using 16 detector units. The use of the smaller number of detector units could reduce the size of the front-end electronics circuits. The inner diameter of the developed detector ring was 260 mm. This size was similar to those of brain PET systems, so our breast-dedicated PET detector ring can measure not only breast but also brain. Measured radial, tangential and axial spatial resolution of the detector ring reconstructed by the filtered back-projection (FBP) algorithm were 2.1 mm FWHM, 2.0 mm FWHM and 1.7 mm FWHM at center of field of view (FOV), respectively. The sensitivity was 2.0% at center of the axial FOV. With the developed detector ring, we could obtain high resolution image of the breast phantom and the brain phantom. We conclude that our developed Si-PM-based detector ring is promising for a high resolution breast-dedicated PET system that can also be used for brain PET system.

  9. Development of Ge/NbSi detectors for EDELWEISS-II with identification of near-surface events

    International Nuclear Information System (INIS)

    Juillard, A.; Marnieros, S.; Dolgorouky, Y.; Berge, L.; Collin, S.; Fiorucci, S.; Lalu, F.; Dumoulin, L.

    2006-01-01

    The actual limitation of Ge ionization heat cryogenic detectors for direct WIMP detection such as EDELWEISS arises from incomplete charge collection for near-surface events. We present results on Ge/NbSi detectors that are fitted with segmented electrodes and two NbSi Anderson insulator thermometric layers. Three such bolometers were studied in the low-background cryostat of the EDELWEISS collaboration in the LSM: analysis of the athermal signals allows us to identify and reject events occurring in the first millimeter under the electrodes

  10. Calcium-Magnesium-Alumino-Silicates (CMAS) Reaction Mechanisms and Resistance of Advanced Turbine Environmental Barrier Coatings for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Costa, Gustavo; Harder, Bryan J.; Wiesner, Valerie L.; Hurst, Janet B.; Puleo, Bernadette J.

    2017-01-01

    Environmental barrier coatings (EBCs) and SiC/SiC ceramic matrix composites (CMCs) systems will play a crucial role in future turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is an essential requirement to enable the applications of the 2700-3000 F EBC - CMC systems. This presentation primarily focuses on the reaction mechanisms of advanced NASA environmental barrier coating systems, when in contact with Calcium-Magnesium Alumino-Silicates (CMAS) at high temperatures. Advanced oxide-silicate defect cluster environmental barrier coatings are being designed for ultimate balanced controls of the EBC temperature capability and CMAS reactivity, thus improving the CMAS resistance. Further CMAS mitigation strategies are also discussed.

  11. Pulse-height response of silicon surface-barrier detectors to high-energy heavy ions

    International Nuclear Information System (INIS)

    Smith, G.D.

    1973-01-01

    The pulse-height defect (PHD) of high-energy heavy ions in silicon surface-barrier detectors can be divided into three components: (1) energy loss in the gold-surface layer, (2) a nuclear-stopping defect, and (3) a defect due to recombination of electron-hole pairs in the plasma created by the heavy ion. The plasma recombination portion of the PHD was the subject of this study using the variation of the PHD with (1) the angle of incidence of incoming heavy ions, and (2) changes in the detector bias. The Tandem Van de Graaff accelerator at Argonne National Laboratory was used to produce scattered beam ions ( 32 S, 35 Cl) and heavy target recoils (Ni, Cu, 98 Mo, Ag, Au) at sufficient energies to produce a significant recombination defect. The results confirm the existence of a recombination zone at the front surface of these detectors and the significance of plasma recombination as a portion of the pulse-height defect. (Diss. Abstr. Int., B)

  12. Development of a alpha spectrometer system with the surface barrier detector

    International Nuclear Information System (INIS)

    Alencar, Marcus Alexandre Vallini de

    1994-04-01

    The aim of this work is the development of an α spectrometer of low cost and home made technology. The spectrometer is mounted in a double NIM module and includes a surface barrier detector and dedicate electronic system. Six barrier surface detectors were made, three of which with η type silicon wafer 3350 Ω.cm, 270mm 2 and three other with ρ type silicon wafer 5850 Ω.cm and 220mm 2 . The rectifier and the ohmic contacts were prepared at high vacuum (10 -2 to 10 -3 Pa) evaporation with 40μg/cm 2 of Au and Al respectively for the η type detectors, and with Al and Au respectively for the ρ type detectors. The electronic system is composed by a low noise charge sensitive preamplifier with the operational amplifier LF-356 mounted with 1OOMΩ feedback resistor and a 0.5 pF capacitor. The linear amplifier is also based in the LF-356 and the LM-310 operational amplifier. The bipolar output is formatted through a (CR) 2- (RC) 4 shaping network and the unipolar output is obtained through a CR-(RC) 4 shaping system which is sufficient to realize a almost true Gaussian shaping pulse with a time constant of 3.0μs. This format was chosen because we can expect a low counting rate and the gaussian pulse can improve the signal/noise ratio. The first CR differentiation has also a active pole-zero cancellation network.The resolution of detectors for 241 Am α particles at room temperature (24 degree) vary 21 to 44 keV FWHM. The electronic noise of the noise of the system is 7.5 keV FWHM at OpF input capacitance. The overall resolution of the spectrometer was found to be 62 keV FWHM at room temperature. The simplicity of the electronic system, the low cost of the construction and the overall resolution show that this alpha spectrometer can be readily used in measurements where high resolution is not a premium. (author)

  13. Application of the pulse-shape technique to proton-alpha discrimination in Si-detector arrays

    International Nuclear Information System (INIS)

    Pausch, G.; Moszynski, M.; Wolski, D.; Bohne, W.; Grawe, H.; Hilscher, D.; Schubart, R.; De Angelis, G.; De Poli, M.

    1995-04-01

    The capability of the pulse-shape technique with reversed n-type Si detectors for discrimination of protons and alphas produced in fusion-evaporation reactions was tested at the VICKSI cyclotron in Berlin. We applied a zero-crossing technique which does not need any external time reference, and which can therefore be exploited at DC accelerators. Excellent proton-alpha discrimination in the full energy range of the evaporation spectra, but also charge and even isotope resolution for heavier ions produced in projectile fragmentation, was obtained with detectors of an existing Si ball. There is no doubt that the pulse-shape discrimination works well with detectors from serial production and under experimental conditions which are typical for nuclear structure studies. An application of this technique in Si detector arrays is obvious, but some special features must be considered in the design of the electronics. The particle discrimination depends strongly on the electric field distribution inside the detector. Stabilization of the bias voltage at the detector is therefore recommended. A consequence of the rear-side injection mode is a strong variation of the charge-collection time with energy, charge, and mass number of the detected ion. To obtain a precise energy signal it is indispensable to correct for the ballistic deficit. (orig.)

  14. A low cost network of spectrometer radiation detectors based on the ArduSiPM a compact transportable Software/Hardware Data Acquisition system with Arduino DUE

    International Nuclear Information System (INIS)

    Bocci, Valerio; Chiodi, Giacomo; Iacoangeli, Francesco; Nuccetelli, Massimo; Recchia, Luigi

    2015-01-01

    The necessity to use Photo Multipliers (PM) as light detector limited in the past the use of crystals in radiation handled device preferring the Geiger approach. The Silicon Photomultipliers (SiPMs) are very small and cheap, solid photon detectors with good dynamic range and single photon detection capability, they are usable to supersede cumbersome and difficult to use Photo Multipliers (PM). A SiPM can be coupled with a scintillator crystal to build efficient, small and solid radiation detector. A cost effective and easily replicable Hardware software module for SiPM detector readout is made using the ArduSiPM solution. The ArduSiPM is an easily battery operable handled device using an Arduino DUE (an open Software/Hardware board) as processor board and a piggy-back custom designed board (ArduSiPM Shield), the Shield contains all the blocks features to monitor, set and acquire the SiPM using internet network. (authors)

  15. A low cost network of spectrometer radiation detectors based on the ArduSiPM a compact transportable Software/Hardware Data Acquisition system with Arduino DUE

    Energy Technology Data Exchange (ETDEWEB)

    Bocci, Valerio; Chiodi, Giacomo; Iacoangeli, Francesco; Nuccetelli, Massimo; Recchia, Luigi [INFN Sezione di Roma, P.le Aldo moro 2, Rome, I-00185 (Italy)

    2015-07-01

    The necessity to use Photo Multipliers (PM) as light detector limited in the past the use of crystals in radiation handled device preferring the Geiger approach. The Silicon Photomultipliers (SiPMs) are very small and cheap, solid photon detectors with good dynamic range and single photon detection capability, they are usable to supersede cumbersome and difficult to use Photo Multipliers (PM). A SiPM can be coupled with a scintillator crystal to build efficient, small and solid radiation detector. A cost effective and easily replicable Hardware software module for SiPM detector readout is made using the ArduSiPM solution. The ArduSiPM is an easily battery operable handled device using an Arduino DUE (an open Software/Hardware board) as processor board and a piggy-back custom designed board (ArduSiPM Shield), the Shield contains all the blocks features to monitor, set and acquire the SiPM using internet network. (authors)

  16. Improvement of thick a-Si radiation detectors by field profile tailoring

    International Nuclear Information System (INIS)

    Drewery, J.S.; Cho, G.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1992-04-01

    Application of thick (∼50 μm) a-Si p-i-n diodes as a direct radiation detector for minimum ionizing particles is hampered by the need to apply large bias voltages in order fully to deplete the detecting intrinsic layer, which typically contains 5 - 10 x 10 14 ionizable dangling bonds per CM 3 . By insertion of thin p-type layers at intervals within the intrinsic layer, the required depletion voltage can be reduced by a factor of at least 1/(n+l) where n is the number of layers inserted. This principle is demonstrated for devices approximately 12μm in thickness. It is shown that electron losses within the p type layer can be kept to minimum by choice of a low doping concentration for the introduced players

  17. The role of deep level traps in barrier height of 4H-SiC Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Zaremba, G., E-mail: gzaremba@ite.waw.pl [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Adamus, Z. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Jung, W.; Kaminska, E.; Borysiewicz, M.A.; Korwin-Mikke, K. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

    2012-09-01

    This paper presents a discussion about the influence of deep level defects on the height of Ni-Si based Schottky barriers to 4H-SiC. The defects were characterized by deep level transient spectroscopy (DLTS) in a wide range of temperatures (78-750 K). The numerical simulation of barrier height value as a function of dominant defect concentration was carried out to estimate concentration, necessary to 'pin' Fermi level and thus significantly influence the barrier height. From comparison of the results of simulation with barrier height values obtained by capacitance-voltage (C-V) measurements it seems that dominant defect in measured concentration has a very small impact on the barrier height and on the increase of reverse current.

  18. The Development of 2700-3000 F Environmental Barrier Coatings for SiC/SiC Ceramic Matrix Composites: Challenges and Opportunities

    Science.gov (United States)

    Zhu, Dongming

    2015-01-01

    Environmental barrier coatings (EBCs) and SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in future turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is a key to enable the applications of the envisioned 2700-3000F EBC - CMC systems to help achieve next generation engine performance and durability goals. This paper will primarily address the performance requirements and design considerations of environmental barrier coatings for turbine engine applications. The emphasis is placed on current NASA candidate environmental barrier coating systems for SiCSiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. The efforts have been also directed to developing prime-reliant, self-healing 2700F EBC bond coat; and high stability, lower thermal conductivity, and durable EBC top coats. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, cyclic durability, erosion-impact resistance, and long-term system performance will be described. The research and development opportunities for turbine engine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be discussed.

  19. Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

    Energy Technology Data Exchange (ETDEWEB)

    Dharmaraj, P.; Justin Jesuraj, P.; Jeganathan, K., E-mail: kjeganathan@yahoo.com [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)

    2016-02-01

    We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and high electron mobility well excess of 6000 cm{sup 2} V{sup −1} s{sup −1}.

  20. Detection performance study of SI-GaAs detectors with novel electrode metallization

    International Nuclear Information System (INIS)

    Dubecky, F.; Zatko, B.; Gombia, E.; Sagatova, A.; Necas, V.

    2013-01-01

    The present work reports on the detection performance of α-particles observed with the novel electrode using Mg as low w f metal on SI-GaAs. Three types of structures with Pt and Mg full area contacts deposited on the same 'detector-grade' bulk SI-GaAs are investigated and compared: (i) Mg-Mg, (ii) Mg-Pt, and (iii) Pt-Pt. The prepared structures are characterized by the current-voltage (I-V) and 5.5 MeV α-particles pulse height spectra measurements using 241 Am source. It is shown, that the various structures give rise to characteristic I-V dependences, detected spectra and charge collection efficiency (CCE) versus bias dependences. The irradiated low w f contact (Mg-Mg structure) gives almost negligible CCE at zero bias voltage, while Pt contact detects α-particles about 10 x more effectively. A tentative explanation of the observed effects is discussed and possible applications, based on the obtained results, are proposed. (authors)

  1. Particle Identification performance for leptons in jets for the CLIC ILD and CLIC SiD detectors

    CERN Document Server

    Nardulli, J

    2011-01-01

    This note describes the particle identification performance for particles in jets for the CLIC ILD and CLIC SiD detector concepts as prepared in the CLIC Conceptual Design Report. The results are presented with and without the presence of the γγ → hadrons background events.

  2. Development of a composite large-size SiPM (assembled matrix) based modular detector cluster for MAGIC

    Energy Technology Data Exchange (ETDEWEB)

    Hahn, A., E-mail: ahahn@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Mazin, D., E-mail: mazin@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Institute for Cosmic Ray Research, The University of Tokyo, 5-1-5 Kashiwa-no-Ha, Kashiwa City, Chiba 277–8582 (Japan); Bangale, P., E-mail: priya@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Dettlaff, A., E-mail: todettl@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Fink, D., E-mail: fink@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Grundner, F., E-mail: grundner@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Haberer, W., E-mail: haberer@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); Maier, R., E-mail: rma@mpp.mpg.de [Max Planck Institute for Physics (Werner-Heisenberg-Institut), Föhringer Ring 6, 80805 München (Germany); and others

    2017-02-11

    The MAGIC collaboration operates two 17 m diameter Imaging Atmospheric Cherenkov Telescopes (IACTs) on the Canary Island of La Palma. Each of the two telescopes is currently equipped with a photomultiplier tube (PMT) based imaging camera. Due to the advances in the development of Silicon Photomultipliers (SiPMs), they are becoming a widely used alternative to PMTs in many research fields including gamma-ray astronomy. Within the Otto-Hahn group at the Max Planck Institute for Physics, Munich, we are developing a SiPM based detector module for a possible upgrade of the MAGIC cameras and also for future experiments as, e.g., the Large Size Telescopes (LST) of the Cherenkov Telescope Array (CTA). Because of the small size of individual SiPM sensors (6 mm×6 mm) with respect to the 1-inch diameter PMTs currently used in MAGIC, we use a custom-made matrix of SiPMs to cover the same detection area. We developed an electronic circuit to actively sum up and amplify the SiPM signals. Existing non-imaging hexagonal light concentrators (Winston cones) used in MAGIC have been modified for the angular acceptance of the SiPMs by using C++ based ray tracing simulations. The first prototype based detector module includes seven channels and was installed into the MAGIC camera in May 2015. We present the results of the first prototype and its performance as well as the status of the project and discuss its challenges. - Highlights: • The design of the first SiPM large-size IACT pixel is described. • The simulation of the light concentrators is presented. • The temperature stability of the detector module is demonstrated. • The calibration procedure of SiPM device in the field is described.

  3. The Development of Environmental Barrier Coatings for SiCSiC Ceramic Matrix Composites: Challenges and Opportunities

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Environmental barrier coatings (EBCs) and SiC/SiC ceramic matrix composites (CMCs) systems will play a crucial role in future turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is a key to enable the applications of the envisioned CMC components to help achieve next generation engine performance and durability goals. This paper will primarily address the performance requirements and design considerations of environmental barrier coatings for turbine engine applications. The emphasis is placed on current candidate environmental barrier coating systems for SiCSiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. Major technical barriers in developing advanced environmental barrier coating systems, the coating integrations with next generation CMC turbine components having improved environmental stability, cyclic durability and system performance will be described. The development trends for turbine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be discussed.

  4. Analysis and comparison of the breakdown performance of semi-insulator and dielectric passivated Si strip detectors

    Science.gov (United States)

    Ranjan, Kirti; Bhardwaj, Ashutosh; Namrata; Chatterji, Sudeep; Srivastava, Ajay K.; Shivpuri, R. K.

    2002-12-01

    The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction depth, metal-overhang width, device depth, substrate resistivity and fixed oxide charge on the junction breakdown voltage of these structures is extensively studied. The results presented in this work clearly demonstrate the superiority of the metal-overhang structure design employing semi-insulator passivated structures over dielectric passivated ones in realising a given breakdown voltage. The effect of bulk damage caused by hadron environment in the passivated Si detectors is simulated, to a first order approximation, by varying effective carrier concentration (calculated using Hamburg Model) and minority carrier lifetime. This approach allows getting an insight of the device behaviour after radiation damage by evaluating the electric field distribution, and thus proves helpful in predicting some interesting results.

  5. A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films.

    Science.gov (United States)

    Chen, Sheng-Wen; Wang, Yu-Sheng; Hu, Shao-Yu; Lee, Wen-Hsi; Chi, Chieh-Cheng; Wang, Ying-Lang

    2012-03-02

    Amorphous nitrogen-doped silicon carbide (α-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study, the etching stop layers were deposited by using trimethylsilane (3MS) or tetramethylsilane (4MS) with ammonia by plasma-enhanced chemical vapor deposition (PECVD) followed by a procedure for tetra-ethoxyl silane (TEOS) oxide. The depth profile of Cu distribution examined by second ion mass spectroscopy (SIMs) showed that 3MS α-SiCN:H exhibited a better barrier performance than the 4MS film, which was revealed by the Cu signal. The FTIR spectra also showed the intensity of Si-CH₃ stretch mode in the α-SiCN:H film deposited by 3MS was higher than that deposited by 4MS. A novel multi structure of oxygen-doped silicon carbide (SiC:O) substituted TEOS oxide capped on 4MS α-SiC:N film was also examined. In addition to this, the new multi etch stop layers can be deposited together with the same tool which can thus eliminate the effect of the vacuum break and accompanying environmental contamination.

  6. A Study of Trimethylsilane (3MS and Tetramethylsilane (4MS Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

    Directory of Open Access Journals (Sweden)

    Sheng-Wen Chen

    2012-03-01

    Full Text Available Amorphous nitrogen-doped silicon carbide (α-SiCN:H films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI manufacturing technology. In this study, the etching stop layers were deposited by using trimethylsilane (3MS or tetramethylsilane (4MS with ammonia by plasma-enhanced chemical vapor deposition (PECVD followed by a procedure for tetra-ethoxyl silane (TEOS oxide. The depth profile of Cu distribution examined by second ion mass spectroscopy (SIMs showed that 3MS α-SiCN:H exhibited a better barrier performance than the 4MS film, which was revealed by the Cu signal. The FTIR spectra also showed the intensity of Si-CH3 stretch mode in the α-SiCN:H film deposited by 3MS was higher than that deposited by 4MS. A novel multi structure of oxygen-doped silicon carbide (SiC:O substituted TEOS oxide capped on 4MS α-SiC:N film was also examined. In addition to this, the new multi etch stop layers can be deposited together with the same tool which can thus eliminate the effect of the vacuum break and accompanying environmental contamination.

  7. Plasma-polymerized SiOx deposition on polymer film surfaces for preparation of oxygen gas barrier polymeric films

    International Nuclear Information System (INIS)

    Inagaki, N.

    2003-01-01

    SiOx films were deposited on surfaces of three polymeric films, PET, PP, and Nylon; and their oxygen gas barrier properties were evaluated. To mitigate discrepancies between the deposited SiOx and polymer film, surface modification of polymer films was done, and how the surface modification could contribute to was discussed from the viewpoint of apparent activation energy for the permeation process. The SiOx deposition on the polymer film surfaces led to a large decrease in the oxygen permeation rate. Modification of polymer film surfaces by mans of the TMOS or Si-COOH coupling treatment in prior to the SiOx deposition was effective in decreasing the oxygen permeation rate. The cavity model is proposed as an oxygen permeation process through the SiOx-deposited Nylon film. From the proposed model, controlling the interface between the deposited SiOx film and the polymer film is emphasized to be a key factor to prepare SiOx-deposited polymer films with good oxygen gas barrier properties. (author)

  8. A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Purches, W. E. [School of Physics, UNSW, Sydney 2052 (Australia); Rossi, A.; Zhao, R. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Kafanov, S.; Duty, T. L. [School of Physics, UNSW, Sydney 2052 (Australia); Centre for Engineered Quantum Systems (EQuS), School of Physics, UNSW, Sydney 2052 (Australia); Dzurak, A. S. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia); Rogge, S.; Tettamanzi, G. C., E-mail: g.tettamanzi@unsw.edu.au [School of Physics, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia)

    2015-08-10

    Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

  9. Mechanical Properties and Real-Time Damage Evaluations of Environmental Barrier Coated SiC/SiC CMCs Subjected to Tensile Loading Under Thermal Gradients

    Science.gov (United States)

    Appleby, Matthew; Zhu, Dongming; Morscher, Gregory

    2015-01-01

    SiC/SiC ceramic matrix composites (CMCs) require new state-of-the art environmental barrier coatings (EBCs) to withstand increased temperature requirements and high velocity combustion corrosive combustion gasses. The present work compares the response of coated and uncoated SiC/SiC CMC substrates subjected to simulated engine environments followed by high temperature mechanical testing to asses retained properties and damage mechanisms. Our focus is to explore the capabilities of electrical resistance (ER) measurements as an NDE technique for testing of retained properties under combined high heat-flux and mechanical loading conditions. Furthermore, Acoustic Emission (AE) measurements and Digital Image Correlation (DIC) were performed to determine material damage onset and accumulation.

  10. Creep, Fatigue and Fracture Behavior of Environmental Barrier Coating and SiC-SiC Ceramic Matrix Composite Systems: The Role of Environment Effects

    Science.gov (United States)

    Zhu, Dongming; Ghosn, Louis J.

    2015-01-01

    Advanced environmental barrier coating (EBC) systems for low emission SiCSiC CMC combustors and turbine airfoils have been developed to meet next generation engine emission and performance goals. This presentation will highlight the developments of NASAs current EBC system technologies for SiC-SiC ceramic matrix composite combustors and turbine airfoils, their performance evaluation and modeling progress towards improving the engine SiCSiC component temperature capability and long-term durability. Our emphasis has also been placed on the fundamental aspects of the EBC-CMC creep and fatigue behaviors, and their interactions with turbine engine oxidizing and moisture environments. The EBC-CMC environmental degradation and failure modes, under various simulated engine testing environments, in particular involving high heat flux, high pressure, high velocity combustion conditions, will be discussed aiming at quantifying the protective coating functions, performance and durability, and in conjunction with damage mechanics and fracture mechanics approaches.

  11. Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment

    CERN Document Server

    Li, Z; Anbinderis, P; Anbinderis, T; D’Ambrosio, N; de Boer, Wim; Borchi, E; Borer, K; Bruzzi, M; Buontempo, S; Chen, W; Cindro, V; Dierlamm, A; Eremin, V; Gaubas, E; Gorbatenko, V; Grigoriev, E; Hauler, F; Heijne, Erik H M; Heising, S; Hempel, O; Herzog, R; Härkönen, J; Ilyashenko, I; Janos, S; Jungermann, L; Kalesinskas, V; Kapturauskas, J; Laiho, R; Luukka, P; Mandic, I; De Masi, R; Menichelli, D; Mikuz, M; Militaru, O; Niinikosky, T O; O’Shea, V; Pagano, S; Paul, S; Piotrzkowski, K; Pretzl, K; Rato-Mendes, P; Rouby, X; Ruggiero, G; Smith, K; Sonderegger, P; Sousa, P; Tuominen, E; Tuovinen, E; Verbitskaya, E; Vaitkus, J; Wobst, E; Zavrtanik, M

    2007-01-01

    There are two key approaches in our CERN RD 39 Collaboration efforts to obtain ultra-radiation-hard Si detectors: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (150 K), and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the liquid nitrogen (LN2) temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures.

  12. The ultraviolet radiation detectors based on wide-bandgap Schottky barrier structures

    CERN Document Server

    Blank, T V; Konstantinov, O V

    2002-01-01

    Recently, much attention has been given to measure and control ultraviolet radiation (UVR) from the Sun and artificial sources. We present photodetectors based on different wide-bandgap surface-barrier structures, which exhibit linear photocurrent-radiant flux characteristics in the range 10 sup - sup 2 -10 sup 3 W/m sup 2 and can register different types of UVR. The use of light filter UFS-6 with GaP photodetector results in a spectral photosensitivity range corresponding to the Sun UV radiation if observed on Earth. The spectral sensitivity range of the photodetectors based on 4H-SiC is near the spectrum of relative effectiveness of various wavelengths in bactericidal UVR. The photosensitivity of the surface-barrier photodetectors based on wide-bandgap semiconductors exhibits the essential decline in the short-wavelength UVR region (5-6 eV), which is the region of intrinsic absorption of the semiconductor. We propose a hot exciton model, according to which the hot excitons can form in the process of the pho...

  13. Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

    International Nuclear Information System (INIS)

    Akushichi, T.; Shuto, Y.; Sugahara, S.; Takamura, Y.

    2015-01-01

    We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO x /n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO x barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels

  14. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when

  15. Thermal Gradient Cyclic Behavior of a Thermal/Environmental Barrier Coating System on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Lee, Kang N.; Miller, Robert A.

    2002-01-01

    Thermal barrier and environmental barrier coatings (TBCs and EBCs) will play a crucial role in future advanced gas turbine engines because of their ability to significantly extend the temperature capability of the ceramic matrix composite (CMC) engine components in harsh combustion environments. In order to develop high performance, robust coating systems for effective thermal and environmental protection of the engine components, appropriate test approaches for evaluating the critical coating properties must be established. In this paper, a laser high-heat-flux, thermal gradient approach for testing the coatings will be described. Thermal cyclic behavior of plasma-sprayed coating systems, consisting of ZrO2-8wt%Y2O3 thermal barrier and NASA Enabling Propulsion Materials (EPM) Program developed mullite+BSAS/Si type environmental barrier coatings on SiC/SiC ceramic matrix composites, was investigated under thermal gradients using the laser heat-flux rig in conjunction with the furnace thermal cyclic tests in water-vapor environments. The coating sintering and interface damage were assessed by monitoring the real-time thermal conductivity changes during the laser heat-flux tests and by examining the microstructural changes after the tests. The coating failure mechanisms are discussed based on the cyclic test results and are correlated to the sintering, creep, and thermal stress behavior under simulated engine temperature and heat flux conditions.

  16. Double Photon Emission Coincidence Imaging using GAGG-SiPM pixel detectors

    Science.gov (United States)

    Shimazoe, K.; Uenomachi, M.; Mizumachi, Y.; Takahashi, H.; Masao, Y.; Shoji, Y.; Kamada, K.; Yoshikawa, A.

    2017-12-01

    Single photon emission computed tomography(SPECT) is a useful medical imaging modality using single photon detection from radioactive tracers, such as 99Tc and 111In, however further development of increasing the contrast in the image is still under investigation. A novel method (Double Photon Emission CT / DPECT) using a coincidence detection of two cascade gamma-rays from 111In is proposed and characterized in this study. 111In, which is well-known and commonly used as a SPECT tracer, emits two cascade photons of 171 keV and 245 keV with a short delay of approximately 85 ns. The coincidence detection of two gamma-rays theoretically determines the position in a single point compared with a line in single photon detection and increases the signal to noise ratio drastically. A fabricated pixel detector for this purpose consists of 8 × 8 array of high-resolution type 1.5 mm thickness Ce:GAGG (3.9% @ 662 keV, 6.63g/cm3, C&A Co. Ce:Gd3Ga2.7Al2.3O12 2.5 × 2.5 × 1.5 mm3) crystals coupled a 3 mm pixel SiPM array (Hamamatsu MPPC S13361-2050NS-08). The signal from each pixel is processed and readout using time over threshold (TOT) based parallel processing circuit to extract the energy and timing information. The coincidence was detected by FPGA with the frequency of 400 MHz. Two pixel detectors coupled to parallel-hole collimators are located at the degree of 90 to determine the position and coincidence events (time window =1 μs) are detected and used for making back-projection image. The basic principle of DPECT is characterized including the detection efficiency and timing resolution.

  17. Trigger Efficiency of a ZnS:6LiF Scintillation Neutron Detector Readout With a SiPM

    Science.gov (United States)

    Stoykov, Alexey; Mosset, Jean-Baptiste; Hildebrandt, Malte

    2016-08-01

    The efficiency of detecting signals from neutron absorption events (trigger efficiency) in detectors using ZnS scintillators loaded with neutron absorbers (6Li, 10B) is prone to be limited to values well below 100%: the non-transparency of the scintillator results in a wide dynamic range of the detected signals with some fraction always falling under the detection threshold set to satisfy the requirements on the gamma sensitivity, multi-count ratio, and the background count rate of the detector. The question of the limited trigger efficiency of such detectors is very seldom discussed in publications, yet it is very important as the product of the trigger efficiency and the probability of neutron absorption in the detector defines its overall efficiency. Available data indicate that the trigger efficiency of PMT-based detectors used in neutron diffraction experiments can be as low as 50%. In this work we evaluate the trigger efficiency of a SiPM-based ZnS:6LiF scintillation neutron detector developed to replace a 3He-detector of the POLDI time-of-flight diffractometer at the Paul Scherrer Institut in Switzerland. Requiring the gamma sensitivity with a 60Co source ≤10-7, the multi-count ratio ≤10-3 with the detector dead time set to 10 μs, and the background count rate 10-3Hz we obtain the maximum possible trigger efficiency of 85% with the main restriction coming from the gamma sensitivity condition. Considering the neutron absorption probability of 80% at 1°Å, the detector efficiency at this wavelength amounts to 70%, which is comparable to that of the current 3He-detector of the POLDI instrument.

  18. Improved Count Rate and Resolution Performance of a Thermoelectrically Cooled Si(Li) X-ray Detector.

    Science.gov (United States)

    Barkan; Ihrig; Abott

    1999-03-01

    : A new energy-dispersive spectrometer Si(Li) detector for microanalysis applications, cooled by a thermoelectric (Peltier) refrigerator, was significantly improved with regard to the resolution and high count-rate performance. This new detector was mounted on a JEOL 6400 scanning electron microscope, and several application tests were run to analyze its performance. The common resolution test using an Fe55 radioactive source was performed, and it was compared with the conventional liquid nitrogen (LN) detector. The resolution at low and high count-rate was found to be slightly less than the LN detector's performance; however, these differences are minor and most application requirements were easily met. The thermoelectric cooling mechanism was found to be stable and reliable with no degradation in its performance recorded during several years of use. The collected data show improved performance by the new thermoelectrically cooled (TEC) detector compared with the old TEC design and underscore performance very close to the LN product. For most microanalysis applications, the new TEC X-ray detector can easily replace the LN detector and avoid the maintenance associated with LN filling.

  19. Electrical Characterization of High Energy Electron Irradiated Ni/4 H-SiC Schottky Barrier Diodes

    Science.gov (United States)

    Paradzah, A. T.; Omotoso, E.; Legodi, M. J.; Auret, F. D.; Meyer, W. E.; Diale, M.

    2016-08-01

    The effect of high energy electron irradiation on Ni/4 H-SiC Schottky barrier diodes was evaluated by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements at room temperature. Electron irradiation was achieved by using a radioactive strontium source with peak emission energy of 2.3 MeV. Irradiation was performed in fluence steps of 4.9 × 1013 cm-2 until a total fluence of 5.4 × 1014 cm-2 was reached. The Schottky barrier height determined from I- V measurements was not significantly changed by irradiation while that obtained from C- V measurements increased with irradiation. The ideality factor was obtained before irradiation as 1.05 and this value did not significantly change as a result of irradiation. The series resistance increased from 47 Ω before irradiation to 74 Ω after a total electron fluence of 5.4 × 1014 cm-2. The net donor concentration decreased with increasing irradiation fluence from 4.6 × 1014 cm-3 to 3.0 × 1014 cm-3 from which the carrier removal rate was calculated to be 0.37 cm-1.

  20. Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

    International Nuclear Information System (INIS)

    Hong-Bin, Pu; Lin, Cao; Zhi-Ming, Chen; Jie, Ren; Ya-Gong, Nan

    2010-01-01

    This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H—SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

    International Nuclear Information System (INIS)

    Choi, Bum Ho; Lee, Jong Ho

    2014-01-01

    We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10 −6 g/(m 2 day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are free from intermixed interface defects effectively block water vapor permeation into active layer

  2. Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching

    Directory of Open Access Journals (Sweden)

    Qiang Li

    2016-12-01

    Full Text Available The prevention of glow-to-arc transition exhibited by micro dielectric barrier discharge (MDBD, as well as its long lifetime, has generated much excitement across a variety of applications. Silicon nitride (SiNx is often used as a dielectric barrier layer in DBD due to its excellent chemical inertness and high electrical permittivity. However, during fabrication of the MDBD devices with multilayer films for maskless nano etching, the residual stress-induced deformation may bring cracks or wrinkles of the devices after depositing SiNx by plasma enhanced chemical vapor deposition (PECVD. Considering that the residual stress of SiNx can be tailored from compressive stress to tensile stress under different PECVD deposition parameters, in order to minimize the stress-induced deformation and avoid cracks or wrinkles of the MDBD device, we experimentally measured stress in each thin film of a MDBD device, then used numerical simulation to analyze and obtain the minimum deformation of multilayer films when the intrinsic stress of SiNx is −200 MPa compressive stress. The stress of SiNx can be tailored to the desired value by tuning the deposition parameters of the SiNx film, such as the silane (SiH4–ammonia (NH3 flow ratio, radio frequency (RF power, chamber pressure, and deposition temperature. Finally, we used the optimum PECVD process parameters to successfully fabricate a MDBD device with good quality.

  3. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

    Directory of Open Access Journals (Sweden)

    Ivan Shtepliuk

    2016-11-01

    Full Text Available A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.

  4. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

    Science.gov (United States)

    Eriksson, Jens; Khranovskyy, Volodymyr; Iakimov, Tihomir; Lloyd Spetz, Anita; Yakimova, Rositsa

    2016-01-01

    A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed. PMID:28144530

  5. Energy dispersive X-ray fluorescence from useless tyres samples with a Si PIN detector

    International Nuclear Information System (INIS)

    Lopes, Fabio; Scheibel, Viviane; Melquiades, Fabio Luiz; Moraes, Liz Mary Bueno de

    2005-01-01

    The concentration of Zn from discard tyre samples is of environmental interest, since on its production are used S for the rubber vulcanization process, and Zn O as reaction catalyze. The useless tyres are been used for asphalt pave, burn in cement industry and thermoelectric power plant and in erosion control of agriculture areas. Analyses of these samples requires frequently chemical digestion that is expensive and take a long time. Trying to eliminate these limitations, the objective of this work was use Energy Dispersive X Ray Fluorescence technique (EDXRF) with a portable system as the technique is multi elementary and needs a minimum sample preparation. Five useless tyres samples were grind in a knife mill and after this in a cryogenic mill, and analyzed in pellets form, using a X ray mini tube (Ag target, Mo l ter, 25 kV/20 A ) for 200 s and a Si-PIN semiconductor detector coupled to a multichannel analyzer. Were obtained Zn concentrations in the range of 40.6 to 44.2 g g 1 , representing nearly 0.4. (author)

  6. Improvement of the thermal stability of the HfO{sub 2}/Si(100) system using a diffusion barrier

    Energy Technology Data Exchange (ETDEWEB)

    Weier, D.; Schuermann, M.; Fluechter, C.; Westphal, C. [Experimentelle Physik 1 - Universitaet Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund (Germany); Sievro, A. de; Landers, R. [Laboratorio Nacional de Luz Sincrotron, C.P. 6192, 13084-971 Campinas, SP (Brazil); Carazzolne, M.; Pancotti, A.; Kleiman, G. [Instituto de Fisica - Universidade Estadual de Campinas (Brazil)

    2007-07-01

    The ongoing miniaturisation of transistor devices requires a new gate dielectric to replace silicon oxide (SiO{sub 2}) that has been used for the last decades. The possible substitutes have to fulfill several requirements like band gap alignment to the silicon, a good interface quality, and a thermal stability. HfO{sub 2} meets most of the requirements, but it is shown in many studies that it's thermal stability is one of the main problems of the system HfO{sub 2}/Si(100) due to silicide formation at high temperature annealing. In this work a film of silicon nitride was deposited on the silicon substrate via sputtering and annealing. The silicon nitride (Si{sub 3}N{sub 4}) is stable when a high temperature annealing up to approximately 1100 C is applied. Thus, it can be used as a diffusion barrier for the HfO{sub 2} in the high temperature range. We will show several heating cycles for different diffusion barrier thicknesses and we compare them with similar cycles for HfO{sub 2}/Si(100) films without a diffusion barrier. It is shown that it is possible to increase the thermal stability of HfO{sub 2} with a Si{sub 3}N{sub 4} layer.

  7. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    Science.gov (United States)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  8. Neutron transmutation doping of silicon for the production of radiation detectors

    International Nuclear Information System (INIS)

    Alexiev, D.

    1987-11-01

    P-type silicon was doped by neutron transmutation (NTD-Si) to produce high resistivity n-type silicon suitable for the production of surface barrier radiation detectors. Deep level transient spectroscopy (DLTS) analysis showed no remnant traps following annealing (850 deg C) of the NTD-Si in the presence of a phosphosilicate glass getter. Surface barrier radiation detectors constructed from this material showed no significant charge trapping and compare favourably with those constructed of float-zone (FZ) Si

  9. Performance and emission characteristics of the thermal barrier coated SI engine by adding argon inert gas to intake mixture.

    Science.gov (United States)

    Karthikeya Sharma, T

    2015-11-01

    Dilution of the intake air of the SI engine with the inert gases is one of the emission control techniques like exhaust gas recirculation, water injection into combustion chamber and cyclic variability, without scarifying power output and/or thermal efficiency (TE). This paper investigates the effects of using argon (Ar) gas to mitigate the spark ignition engine intake air to enhance the performance and cut down the emissions mainly nitrogen oxides. The input variables of this study include the compression ratio, stroke length, and engine speed and argon concentration. Output parameters like TE, volumetric efficiency, heat release rates, brake power, exhaust gas temperature and emissions of NOx, CO2 and CO were studied in a thermal barrier coated SI engine, under variable argon concentrations. Results of this study showed that the inclusion of Argon to the input air of the thermal barrier coated SI engine has significantly improved the emission characteristics and engine's performance within the range studied.

  10. Effect of La doping on interface barrier between Si-passivated Ge and insulating HfO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Kolomiiets, Nadiia M.; Afanas' ev, Valery V.; Madia, Oreste; Stesmans, Andre [Department of Physics and Astronomy, University of Leuven, Celestijnenlaan 200D, 3001 Leuven (Belgium); Cott, Daire J.; Collaert, Nadine [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Thean, Aaron [Imec, Kapeldreef 75, 3001 Leuven (Belgium); National University of Singapore (Singapore)

    2016-12-15

    By analyzing internal photoemission of electrons from Si/SiO{sub x}-passivated Ge into insulating HfO{sub 2} we found that insertion of additional La interlayer between SiO{sub x} and HfO{sub 2} leads to dramatic increase (more than by factor of 20) of the barrier transparency. However, no measurable variation of the interface barrier height is observed suggesting that La induces intermixing of near-interface oxide stack resulting in development of additional density of states corresponding to conduction band of LaO{sub x} and HfO{sub x} sub-networks. At the same time, photoemission results indicate the presence of discrete positive charges in the near-interface oxide layer which may explain the observed ∝1 V shift of capacitance-voltage curves. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Measurements of a detector prototype with direct SiPM read-out and comparison with simulated data

    CERN Document Server

    Scheuch, Florian

    2010-01-01

    This thesis outlines measurements of a detector prototype for muon detection with direct SiPM readout. Special attention has been turned on the reflectors around the scintillator. Therefore cosmic muons have been measured with four different reflectors. Also a thinner scintillator module was measured to determine whether the light yield of smaller modules is sufficient. The data of the different reflectors has been evaluated and is compared to GEANT4 simulations of the setup.

  12. NASA's Advanced Environmental Barrier Coatings Development for SiC/SiC Ceramic Matrix Composites: Understanding Calcium Magnesium Alumino-Silicate (CMAS) Degradations and Resistance

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Environmental barrier coatings (EBCs) and SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is essential to the viability and reliability of the envisioned CMC engine component applications, ensuring integrated EBC-CMC system durability and designs are achievable for successful applications of the game-changing component technologies and lifing methodologies.This paper will emphasize recent NASA environmental barrier coating developments for SiCSiC turbine airfoil components, utilizing advanced coating compositions, state-of-the-art processing methods, and combined mechanical and environment testing and durability evaluations. The coating-CMC degradations in the engine fatigue-creep and operating environments are particularly complex; one of the important coating development aspects is to better understand engine environmental interactions and coating life debits, and we have particularly addressed the effect of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the durability of the environmental barrier coating systems, and how the temperature capability, stability and cyclic life of the candidate rare earth oxide and silicate coating systems will be impacted in the presence of the CMAS at high temperatures and under simulated heat flux conditions. Advanced environmental barrier coating systems, including HfO2-Si with rare earth dopant based bond coat systems, will be discussed for the performance improvements to achieve better temperature capability and CMAS resistance for future engine operating conditions.

  13. Electric field strength and plasma delay in silicon surface barrier detector

    International Nuclear Information System (INIS)

    Kanno, I.; Inbe, T.; Kanazawa, S.; Kimura, I.

    1994-01-01

    The resistivity change of a silicon irradiated by high energy neutrons became an interest of study associated with the large scale accelerator projects . The increase of the resistivity of the silicon of a silicon surface barrier detector (SSBD) was studied as a function of neutron fluence. The plasma delay, which was an interesting but not favorite timing property of the SSBD, was reported being dependent on the resistivity of silicon . The neutron irradiation brings the change of timing property as well as the resistivity change on the SSBD. The resistivity dependence of the plasma delay should be studied for the purpose of high energy accelerator experiments. Some empirical formulae of the plasma delay were reported, however, there were no discussions on the physical meanings of the resistivity dependence of the plasma delay. The plasma delay in a SSBD is discussed in the light of electric field strength in the depletion layer of the SSBD. The explanation of the plasma delay is presented taking into account of the competing two electric forces. The resistivity of the silicon affects the plasma delay through the electric forces. 3 figs, 3 refs. (author)

  14. Performance of a high-resolution depth-encoding PET detector module using linearly-graded SiPM arrays

    Science.gov (United States)

    Du, Junwei; Bai, Xiaowei; Gola, Alberto; Acerbi, Fabio; Ferri, Alessandro; Piemonte, Claudio; Yang, Yongfeng; Cherry, Simon R.

    2018-02-01

    The goal of this study was to exploit the excellent spatial resolution characteristics of a position-sensitive silicon photomultiplier (SiPM) and develop a high-resolution depth-of-interaction (DOI) encoding positron emission tomography (PET) detector module. The detector consists of a 30  ×  30 array of 0.445  ×  0.445  ×  20 mm3 polished LYSO crystals coupled to two 15.5  ×  15.5 mm2 linearly-graded SiPM (LG-SiPM) arrays at both ends. The flood histograms show that all the crystals in the LYSO array can be resolved. The energy resolution, the coincidence timing resolution and the DOI resolution were 21.8  ±  5.8%, 1.23  ±  0.10 ns and 3.8  ±  1.2 mm, respectively, at a temperature of ‑10 °C and a bias voltage of 35.0 V. The performance did not degrade significantly for event rates of up to 130 000 counts s‑1. This detector represents an attractive option for small-bore PET scanner designs that simultaneously emphasize high spatial resolution and high detection efficiency, important, for example, in preclinical imaging of the rodent brain with neuroreceptor ligands.

  15. Performance of a high-resolution depth-encoding PET detector module using linearly-graded SiPM arrays.

    Science.gov (United States)

    Du, Junwei; Bai, Xiaowei; Gola, Alberto; Acerbi, Fabio; Ferri, Alessandro; Piemonte, Claudio; Yang, Yongfeng; Cherry, Simon R

    2018-02-05

    The goal of this study was to exploit the excellent spatial resolution characteristics of a position-sensitive silicon photomultiplier (SiPM) and develop a high-resolution depth-of-interaction (DOI) encoding positron emission tomography (PET) detector module. The detector consists of a 30  ×  30 array of 0.445  ×  0.445  ×  20 mm 3 polished LYSO crystals coupled to two 15.5  ×  15.5 mm 2 linearly-graded SiPM (LG-SiPM) arrays at both ends. The flood histograms show that all the crystals in the LYSO array can be resolved. The energy resolution, the coincidence timing resolution and the DOI resolution were 21.8  ±  5.8%, 1.23  ±  0.10 ns and 3.8  ±  1.2 mm, respectively, at a temperature of -10 °C and a bias voltage of 35.0 V. The performance did not degrade significantly for event rates of up to 130 000 counts s -1 . This detector represents an attractive option for small-bore PET scanner designs that simultaneously emphasize high spatial resolution and high detection efficiency, important, for example, in preclinical imaging of the rodent brain with neuroreceptor ligands.

  16. High performance detector head for PET and PET/MR with continuous crystals and SiPMs

    International Nuclear Information System (INIS)

    Llosá, G.; Barrillon, P.; Barrio, J.; Bisogni, M.G.; Cabello, J.; Del Guerra, A.; Etxebeste, A.; Gillam, J.E.; Lacasta, C.; Oliver, J.F.; Rafecas, M.; Solaz, C.; Stankova, V.; La Taille, C. de

    2013-01-01

    A high resolution PET detector head for small animal PET applications has been developed. The detector is composed of a 12mm×12mm continuous LYSO crystal coupled to a 64-channel monolithic SiPM matrix from FBK-irst. Crystal thicknesses of 5 mm and 10 mm have been tested, both yielding an intrinsic spatial resolution around 0.7 mm FWHM with a position determination algorithm that can also provide depth-of-interaction information. The detectors have been tested in a rotating system that makes it possible to acquire tomographic data and reconstruct images of 22 Na sources. An image reconstruction method specifically adapted for continuous crystals has been employed. The Full Width at Half Maximum measured from a point source reconstructed with ML–EM was 0.7 mm with the 5 mm crystal and 0.8 mm with the 10 mm crystal

  17. Design and evaluation of a SiPM-based large-area detector module for positron emission imaging

    Science.gov (United States)

    Alva-Sánchez, H.; Murrieta-Rodríguez, T.; Calva-Coraza, E.; Martínez-Dávalos, A.; Rodríguez-Villafuerte, M.

    2018-03-01

    The design and evaluation of a large-area detector module for positron emission imaging applications, is presented. The module features a SensL ArrayC-60035-64P-PCB solid state detector (8×8 array of tileable silicon photomultipliers by SensL, 7.2 mm pitch) covering a total area of 57.4×57.4 mm2. The detector module was formed using a pixelated array of 40×40 lutetium-yttrium oxyorthosilicate (LYSO) scintillator crystal elements with 1.43 mm pitch. A 7 mm thick coupling light guide was used to allow light sharing between adjacent SiPM. A 16-channel symmetric charge division (SCD) readout board was designed to multiplex the number of signals from 64 to 16 (8 columns and 8 rows) and a center-of-gravity algorithm to identify the position. Data acquisition and digitization was accomplished using a custom-made system based on FPGAs boards. Crystal maps were obtained using 18F-positron sources and Voronoi diagrams were used to correct for geometric distortions and to generate a non-uniformity correction matrix. All measurements were taken at a controlled room temperature of 22oC. The crystal maps showed minor distortion, 90% of the 1600 total crystal elements could be identified, a mean peak-to-valley ratio of 4.3 was obtained and a 10.8% mean energy resolution for 511 keV annihilation photons was determined. The performance of the detector using our own readout board was compared to that using two different commercially readout boards using the same detector module arrangement. We show that these large-area SiPM arrays, combined with a 16-channel SCD readout board, can offer high spatial resolution, excellent energy resolution and detector uniformity and thus, can be used for positron emission imaging applications.

  18. Development of SiPM-based scintillator tile detectors for a multi-layer fast neutron tracker

    Directory of Open Access Journals (Sweden)

    Jakubek J.

    2012-10-01

    Full Text Available We are developing thin tile scintillator detectors with silicon photomultiplier (SiPM readout for use in a multi-layer fast-neutron tracker. The tracker is based on interleaved Timepix and plastic scintillator layers. The thin 15 × 15 × 2 mm plastic scintillators require suitable optical readout in order to detect and measure the energy lost by energetic protons that have been recoiled by fast neutrons. Our first prototype used dual SiPMs, coupled to opposite edges of the scintillator tile using light-guides. An alternative readout geometry was designed in an effort to increase the fraction of scintillation light detected by the SiPMs. The new prototype uses a larger SiPM array to cover the entire top face of the tile. This paper details the comparative performance of the two prototype designs. A deuterium-tritium (DT fast-neutron source was used to compare the relative light collection efficiency of the two designs. A collimated UV light source was scanned across the detector face to map the uniformity. The new prototype was found to have 9.5 times better light collection efficiency over the original design. Both prototypes exhibit spatial non-uniformity in their response. Methods of correcting this non-uniformity are discussed.

  19. arXiv Application of large area SiPMs for the readout of a plastic scintillator based timing detector

    CERN Document Server

    Betancourt, C.; Brundler, R.; Dätwyler, A.; Favre, Y.; Gascon, D.; Gomez, S.; Korzenev, Alexander; Mermod, P.; Noah, E.; Serra, N.; Sgalaberna, D.; Storaci, B.

    2017-11-27

    In this study an array of eight 6 mm × 6 mm area SiPMs was coupled to the end of a long plastic scintillator counter which was exposed to a 2.5 GeV/c muon beam at the CERN PS. Timing characteristics of bars with dimensions 150 cm × 6 cm × 1 cm and 120 cm × 11 cm × 2.5 cm have been studied. An 8-channel SiPM anode readout ASIC (MUSIC R1) based on a novel low input impedance current conveyor has been used to read out and amplify SiPMs independently and sum the signals at the end. Prospects for applications in large-scale particle physics detectors with timing resolution below 100 ps are provided in light of the results.

  20. Application of large area SiPMs for the readout of a plastic scintillator based timing detector

    Science.gov (United States)

    Betancourt, C.; Blondel, A.; Brundler, R.; Dätwyler, A.; Favre, Y.; Gascon, D.; Gomez, S.; Korzenev, A.; Mermod, P.; Noah, E.; Serra, N.; Sgalaberna, D.; Storaci, B.

    2017-11-01

    In this study an array of eight 6 mm × 6 mm area SiPMs was coupled to the end of a long plastic scintillator counter which was exposed to a 2.5 GeV/c muon beam at the CERN PS. Timing characteristics of bars with dimensions 150 cm × 6 cm × 1 cm and 120 cm × 11 cm × 2.5 cm have been studied. An 8-channel SiPM anode readout ASIC (MUSIC R1) based on a novel low input impedance current conveyor has been used to read out and amplify SiPMs independently and sum the signals at the end. Prospects for applications in large-scale particle physics detectors with timing resolution below 100 ps are provided in light of the results.

  1. Design and construction of a system for determination of Radon-222 by a surface-barrier detector

    International Nuclear Information System (INIS)

    Bonifacio M, J.; Iturbe, J.L.

    1993-01-01

    In the present work the design and construction of a system for the determination of 222 Rn is described, which utilizes silicon surface-barrier detectors. The 222 Rn gas was obtained a source of 226 Ra electrodeposited on stainless-steel discs. The well separated energies with this system makes possible the measurement and identification of alpha particles of 222 Rn, and its daughters 210 Po, 218 Po and 214 Po. (Author) 3 figs, 19 refs

  2. RBS using {sup 28}Si beams

    Energy Technology Data Exchange (ETDEWEB)

    Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia); Mitchell, I.V. [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1996-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  3. Parameterization of the pulse height defect and resolution for low-Z ions incident on silicon barrier detectors

    CERN Document Server

    Lee, C

    1999-01-01

    The pulse height output of silicon charged particle detectors has been studied for low Z particles having energies in the range of 1-5 MeV/amu. Particle beams of sup 7 Li, sup 9 Be, sup 1 sup 1 B, sup 1 sup 2 C, and sup 1 sup 6 O nuclei were scattered from sup 1 sup 9 sup 7 Au targets and their energies were measured with two silicon surface barrier detectors. For alpha-particle detection, both beam particles and those from a calibrated sup 2 sup 2 sup 8 Th source were used. The data are anomalous in that the pulse heights for different ions of the same energy increase with atomic number, contrary to observations for fission fragments. It is found that the pulse height output of the detectors and the width of the pulse height distribution (FWHM) increase with the Z and Z sup 2 , respectively, of the detected particle. (author)

  4. Performance of a position sensitive Si(Li) x-ray detector dedicated to Compton polarimetry of stored and trapped highly-charged ions

    International Nuclear Information System (INIS)

    Weber, G; Braeuning, H; Hess, S; Maertin, R; Spillmann, U; Stoehlker, Th

    2010-01-01

    We report on a novel two-dimensional position sensitive Si(Li) detector dedicated to Compton polarimetry of x-ray radiation arising from highly-charged ions. The performance of the detector system was evaluated in ion-atom collision experiments at the ESR storage ringe at GSI, Darmstadt. Based on the data obtained, the polarimeter efficiency is estimated in this work.

  5. Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

    Directory of Open Access Journals (Sweden)

    Feng Sun

    2018-03-01

    Full Text Available Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET require further hole Schottky barrier height (SBH regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. Because of the solubility limits of dopants in silicon, the requirements for effective hole SBH reduction with dopant segregation cannot be satisfied using mono-implantation. In this study, we demonstrate a potential solution for further SBH tuning by implementing the dual implantation of boron (B and aluminum (Al in combination with microwave annealing (MWA. By using such a method, not only has the lowest hole SBH ever with 0.07 eV in NiSi/n-Si contacts been realized, but also the annealing duration of MWA was sharply reduced to 60 s. Moreover, we investigated the SBH tuning mechanisms of the dual-implanted diodes with microwave annealing, including the dopant segregation, activation effect, and dual-barrier tuning effect of Al. With the selection of appropriate implantation conditions, the dual implantation of B and Al combined with the MWA technique shows promise for the fabrication of future p-channel SB-MOSFETs with a lower thermal budget.

  6. In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures.

    Science.gov (United States)

    Byrne, Conor; Brennan, Barry; McCoy, Anthony P; Bogan, Justin; Brady, Anita; Hughes, Greg

    2016-02-03

    Copper/SiO2/Si metal-oxide-semiconductor (MOS) devices both with and without a MnSiO3 barrier layer at the Cu/SiO2 interface have been fabricated in an ultrahigh vacuum X-ray photoelectron spectroscopy (XPS) system, which allows interface chemical characterization of the barrier formation process to be directly correlated with electrical testing of barrier layer effectiveness. Capacitance voltage (CV) analysis, before and after tube furnace anneals of the fabricated MOS structures showed that the presence of the MnSiO3 barrier layer significantly improved electric stability of the device structures. Evidence of improved adhesion of the deposited copper layer to the MnSiO3 surface compared to the clean SiO2 surface was apparent both from tape tests and while probing the samples during electrical testing. Secondary ion mass spectroscopy (SIMS) depth profiling measurements of the MOS test structures reveal distinct differences of copper diffusion into the SiO2 dielectric layers following the thermal anneal depending on the presence of the MnSiO3 barrier layer.

  7. A new fission-fragment detector to complement the CACTUS-SiRi setup at the Oslo Cyclotron Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Tornyi, T.G., E-mail: tornyitom@atomki.hu [Department of Physics, University of Oslo (Norway); Institute of Nuclear Research of the Hungarian Academy of Sciences (MTA Atomki), Debrecen (Hungary); Görgen, A.; Guttormsen, M.; Larsen, A.C.; Siem, S. [Department of Physics, University of Oslo (Norway); Krasznahorkay, A. [Institute of Nuclear Research of the Hungarian Academy of Sciences (MTA Atomki), Debrecen (Hungary); Csige, L. [Institute of Nuclear Research of the Hungarian Academy of Sciences (MTA Atomki), Debrecen (Hungary); Max-Planck-Institute for Quantum Optics, D-85748 Garching (Germany)

    2014-02-21

    An array of Parallel Plate Avalanche Counters (PPAC) for the detection of heavy ions has been developed. The new device, NIFF (Nuclear Instrument for Fission Fragments), consists of four individual detectors and covers 60% of 2π. It was designed to be used in conjunction with the SiRi array of ΔE−E silicon telescopes for light charged particles and fits into the CACTUS array of 28 large-volume NaI scintillation detectors at the Oslo Cyclotron Laboratory. The low-pressure gas-filled PPACs are sensitive for the detection of fission fragments, but are insensitive to scattered beam particles of light ions or light-ion ejectiles. The PPAC detectors of NIFF have good time resolution and can be used either to select or to veto fission events in in-beam experiments with light-ion beams and actinide targets. The powerful combination of SiRi, CACTUS, and NIFF provides new research opportunities for the study of nuclear structure and nuclear reactions in the actinide region. The new setup is particularly well suited to study the competition of fission and γ decay as a function of excitation energy.

  8. Design and spectrum calculation of 4H-SiC thermal neutron detectors using FLUKA and TCAD

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Haili; Tang, Xiaoyan; Guo, Hui, E-mail: guohui@mail.xidian.edu.cn; Zhang, Yimen; Zhang, Yimeng; Zhang, Yuming

    2016-10-11

    SiC is a promising material for neutron detection in a harsh environment due to its wide band gap, high displacement threshold energy and high thermal conductivity. To increase the detection efficiency of SiC, a converter such as {sup 6}LiF or {sup 10}B is introduced. In this paper, pulse-height spectra of a PIN diode with a {sup 6}LiF conversion layer exposed to thermal neutrons (0.026 eV) are calculated using TCAD and Monte Carlo simulations. First, the conversion efficiency of a thermal neutron with respect to the thickness of {sup 6}LiF was calculated by using a FLUKA code, and a maximal efficiency of approximately 5% was achieved. Next, the energy distributions of both {sup 3}H and α induced by the {sup 6}LiF reaction according to different ranges of emission angle are analyzed. Subsequently, transient pulses generated by the bombardment of single {sup 3}H or α-particles are calculated. Finally, pulse height spectra are obtained with a detector efficiency of 4.53%. Comparisons of the simulated result with the experimental data are also presented, and the calculated spectrum shows an acceptable similarity to the experimental data. This work would be useful for radiation-sensing applications, especially for SiC detector design.

  9. Answer to comments on “Fabrication and photovoltaic conversion enhancement of graphene/n-Si Schottky barrier solar cells by electrophoretic deposition”

    Science.gov (United States)

    Chen, Leifeng; He, Hong

    2017-04-01

    Here, we reply to comments by Valentic et al. on our paper published in Electrochimica Acta (2014, 130: 279). They commented that Au nanoparticles played the dominant role on the whole cell's performances in our improved graphene/Si solar cell. We argued that our devices are Au-doped graphene/n-Si Schottky barrier devices, not Au nanoparticles (film)/n-Si Schottky barrier devices. During the doping process, most of the Au nanopatricles covered the surfaces of the graphene. Schottky barriers between doped graphene and n-Si dominate the total cells properties. Through doping, by adjusting and tailoring the Fermi level of the graphene, the Fermi level of n-Si can be shifted down in the graphene/Si Schottky barrier cell. They also argued that the instability of our devices were related to variation in series resistance reduced at the beginning due to slightly lowered Fermi level and increased at the end by the self-compensation by deep in-diffusion of Au nanoparticles. But for our fabricated devices, we know that an oxide layer covered the Si surface, which makes it difficult for the Au ions to diffuse into the Si layer, due to the continuous growth of SiO{}2 layer on the Si surface which resulted in series resistance decreasing at first and increasing in the end.

  10. MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

    Science.gov (United States)

    2012-09-01

    due to metal catalysis and wet etching. Using the blackened SiGe/Si, MSM photodiodes were fabricated and tested. The lowering of reflection using a...MSM- Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred...Do not return it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-6176 September 2012 MSM- Metal

  11. Analysis of dynamic characteristics of SiC Schottky barrier diodes at high switching frequency based on junction capacitance

    Science.gov (United States)

    Maeda, Ryosuke; Okuda, Takafumi; Hikihara, Takashi

    2018-04-01

    In this paper, we focus on relationships between dynamic characteristics and device structures of SiC Schottky barrier diodes (SBDs) to investigate their switching capabilities. A device model based on junction capacitance and thermionic emission theory is proposed. To measure the dynamic characteristics of SiC SBD, a high-frequency (10 MHz) and high-voltage (200 Vpp) wave generator is fabricated. By comparing simulated results with experimental results, it is found that the proposed model can represent the dynamic characteristics at 10 MHz and 200 °C, and the simple device model based on junction capacitance and thermionic emission theory well describes the switching behaviors of SiC SBDs at full operational temperature. The proposed device model is beneficial for designing high-power converters, at both wide temperature and wide frequency ranges.

  12. Advanced Environmental Barrier Coating and SA Tyrannohex SiC Composites Integration for Improved Thermomechanical and Environmental Durability

    Science.gov (United States)

    Zhu, Dongming; Halbig, Michael; Singh, Mrityunjay

    2018-01-01

    The development of 2700 degF capable environmental barrier coating (EBC) systems, particularly, the Rare Earth "Hafnium" Silicon bond coat systems, have significantly improved the temperature capability and environmental stability of SiC/SiC Ceramic Matrix Composite Systems. We have specifically developed the advanced 2700 degF EBC systems, integrating the EBC to the high temperature SA Tyrannohex SiC fiber composites, for comprehensive performance and durability evaluations for potential turbine engine airfoil component applications. The fundamental mechanical properties, environmental stability and thermal gradient cyclic durability performance of the EBC - SA Tyrannohex composites were investigated. The paper will particularly emphasize the high pressure combustion rig recession, cyclic thermal stress resistance and thermomechanical low cycle fatigue testing of uncoated and environmental barrier coated Tyrannohex SiC SA composites in these simulated turbine engine combustion water vapor, thermal gradients, and mechanical loading conditions. We have also investigated high heat flux and flexural fatigue degradation mechanisms, determined the upper limits of operating temperature conditions for the coated SA composite material systems in thermomechanical fatigue conditions. Recent progress has also been made by using the self-healing rare earth-silicon based EBCs, thus enhancing the SA composite hexagonal fiber columns bonding for improved thermomechanical and environmental durability in turbine engine operation environments. More advanced EBC- composite systems based on the new EBC-Fiber Interphases will also be discussed.

  13. Effect of radiation induced deep level traps on Si detector performance

    CERN Document Server

    Eremin, V; Li, Z

    2002-01-01

    The main factor, which leads to semiconductor detector degradation in high-energy physics experiments, is the introduction of lattice defects in the detector material produced by radiation. Based on the spectrum of radiation induced defects in the silicon bulk, the overview of effects and mechanisms responsible for the changes in the main detector parameters such as effective concentration of the space charge in the depleted region, space charge sign inversion, charge collection efficiency, and detector breakdown voltage are considered. Special attention is paid to the electric field distortion related with high concentration of radiation induced deep traps, which is the key question for the design of detectors operating at cryogenic temperature. In particular, the charge collection recovery at low temperature, often refereed as the Lazarus effect, and the limitation for the detection rate related to the polarization effect are considered.

  14. A high-granularity scintillator hadronic-calorimeter with SiPM readout for a linear collider detector

    International Nuclear Information System (INIS)

    Andreev, V.; Balagura, V; Bobchenko, B.

    2004-01-01

    We report upon the design, construction and operation of a prototype for a high-granularity tile hadronic calorimeter for a future international linear collider(ILC) detector. Scintillating tiles are read out via wavelength-shifting fibers which guides the scintillation light to a novel photodetector, the Silicon Photomultiplier. The prototype has been tested at DESY using a positron test beam. The results are compared with a reference prototype equipped with multichannel vacuum photomultipliers. Detector calibration, noise, linearity and stability are discussed, and the energy response in a 1-6 GeV positron beam is compared with simulation. The work presented serves to establish the application of SiPM for calorimetry, and leads to the choice of this device for the construction of a 1m 3 calorimeter prototype for tests in hadron beams. (orig.)

  15. Simulation of a detector prototype with direct SiPM read-out and comparison with measurements

    CERN Document Server

    Kunsken, Andreas

    2010-01-01

    The features of a novel muon detection system are studied in this thesis with the help of GEANT4 simulations. The detector consists of a 10 cm×10 cm scintillator on whose top 3 mm×3 mm silicon photomultipliers are mounted. The scintillator may optionally be wrapped in a reflector. In the simulations various properties of the scintillator and the wrapping are varied like the scintillator thickness or the kind of wrapping and its reflectivity. Subsequently, the number of photons arriving at the SiPM is analyzed to determine the influence of the varied properties. Finally, the results of the simulations are compared to results that come from measurements with the detector setup.

  16. Superconducting single X-ray photon detector based on W0.8Si0.2

    Directory of Open Access Journals (Sweden)

    Xiaofu Zhang

    2016-11-01

    Full Text Available We fabricated a superconducting single X-ray photon detector based on W0.8Si0.2, and we characterized its basic detection performance for keV-photons at different temperatures. The detector has a critical temperature of 4.97 K, and it is able to be operated up to 4.8 K, just below the critical temperature. The detector starts to react to X-ray photons at relatively low bias currents, less than 1% of Ic at T = 1.8 K, and it shows a saturated count rate dependence on bias current at all temperatures, indicating that the optimum internal quantum efficiency can always be reached. Dark counts are negligible up to the highest investigated bias currents (99% of Ic and operating temperature (4.8 K. The latching effect affects the detector performance at all temperatures due to the fast recovery of the bias current; however, further modifications of the device geometry are expected to reduce the tendency for latching.

  17. Determination of equilibrium factor between radon and its progeny using surface barrier detector for various shapes of passive radon dosimeters

    International Nuclear Information System (INIS)

    Jamil, K.; Fazal-ur-Rehman; Ali, S.; Khan, H.A.

    1997-01-01

    In the field of radon dosimetry, it is customary to measure radon ( 222 Rn) concentration while potential health hazard is due to the radon short-lived progeny. When radon is in secular equilibrium, the measured activity of radon equals the activity of radon's progeny. However, in practical cases an inequilibrium between radon and its progeny exists which is measured in terms of the equilibrium factor. To determine the equilibrium factor between radon and its progeny in a closed environment various shapes of passive dosimeters based upon solid state nuclear track detectors (SSNTDs) are employed. In order to observe the dependence of equilibrium factor upon shapes or effective volumes, experiments have been performed replacing the SSNTDs with a surface barrier detector in Karlsruhe diffusion chamber, pen-type and box-type dosimeters. Using the collected alpha spectra, the equilibrium factor has been determined for a radon-air mixture in a custom designed radon chamber simulating a closed environment of a room. The results show that the radon equilibrium factor is about 0.20 for different shapes of dosimeters studied in this research. It is concluded that the determination of equilibrium factor between radon and its progeny does not depend upon effective volume or shape of the passive dosimeters using alpha spectroscopic data acquired by surface barrier detector. (orig.)

  18. A Systematic Study to Optimize SiPM Photo-Detectors for Highest Time Resolution in PET

    CERN Document Server

    Gundacker, S.; Frisch, B.; Hillemanns, H.; Jarron, P.; Meyer, T.; Pauwels, K.; Lecoq, P.

    2012-01-01

    We report on a systematic study of time resolution made with three different commercial silicon photomultipliers (SiPMs) (Hamamatsu MPPC S10931-025P, S10931-050P, and S10931-100P) and two LSO scintillating crystals. This study aimed to determine the optimum detector conditions for highest time resolution in a prospective time-of-flight positron emission tomography (TOF-PET) system. Measurements were based on the time over threshold method in a coincidence setup using the ultrafast amplifier-discriminator NINO and a fast oscilloscope. Our tests with the three SiPMs of the same area but of different SPAD sizes and fill factors led to best results with the Hamamatsu type of 50×50×μm2 single-pixel size. For this type of SiPM and under realistic geometrical PET scanner conditions, i.e., with 2×2×10×mm3 LSO crystals, a coincidence time resolution of 220 ±4 ps FWHM could be achieved. The results are interpreted in terms of SiPM photon detection efficiency (PDE), dark noise, and photon yield.

  19. SiPM-based veto detector for the pion beam at FOPI

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Gamal, E-mail: gsmoawad@hotmail.com; Buehler, Pual; Hartmann, Olaf; Marton, Johann; Suzuki, Ken; Zmeskal, Johann [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences (Austria)

    2012-05-15

    Recently the FOPI collaboration carried out an experiment to study the in medium properties of the K{sup + }K{sup - } system by using the pion beam interactions at 1.7 GeV/c. The experiment with a pion beam poses specific requirements to the detectors and therefore the original FOPI setup needed modifications. The new hardware developments for this experiment include the replacement of the veto detector with another more compact design. Within this report we describe the design and results of a test measurement of the new FOPI veto detector system with the pion beam.

  20. X-ray radiometric transducer with Si semiconductor detector cooling by means of thermoelectric refrigerator

    International Nuclear Information System (INIS)

    Vajgachev, A.A.; Kokhov, E.D.; Mamikonyan, S.V.; Mel'ttser, L.V.; Pan'kin, V.V.; Shchekin, K.I.

    1975-01-01

    The cooling is considered of the silicon-lithium detectors with the use of the thermoelectric cooler. The operation of the thermoelectric cooler is based on Peltje's effect. A temperature differential of up to 50-60 deg C may be obtained on one-stage thermopile. For obtaining lower temperatures, several stages of the thermopiles are employed. The suggested thermal electric cooler is actually a five-stage thermopile consisting of 70-80 semiconductors and ensuring cooling of the detector in the vacuum of 10 -5 torr down to a temperature of -100 deg C. There has been designed, constructed and tested a roentgen-radiometric transducer with a silicon-lithium detector. The energy resolution of the detector amounts to 1.3 keV in the Ag, Ka line

  1. Direct conversion Si and CdZnTe detectors for digital mammography

    CERN Document Server

    Yin Shi Shi; Maeding, D; Mainprize, J; Mawdsley, G; Yaffe, M J; Gordon, E E; Hamilton, W J

    2000-01-01

    Hybrid pixel detector arrays that convert X-rays directly into charge signals are under development at NOVA for application to digital mammography. This technology also has wide application possibilities in other fields of radiology or in industrial imaging, nondestructive evaluation (NDE) and nondestructive inspection (NDI). These detectors have potentially superior properties compared to either emulsion-based film-screen systems which has nonlinear response to X-rays, or phosphor-based detectors in which there is an intermediate step of X-ray to light photon conversion (Feig and Yaffe, Radiol. Clinics North America 33 (1995) 1205-1230). Potential advantages of direct conversion detectors are high quantum efficiencies (QE) of 98% or higher (for 0.3 mm thick CdZnTe detector with 20 keV X-rays), improved contrast, high sensitivity and low intrinsic noise. These factors are expected to contribute to high detective quantum efficiency (DQE). The prototype hybrid pixel detector developed has 50x50 mu m pixel size,...

  2. Diffusion barrier performances of thin Mo, Mo-N and Mo/Mo-N films between Cu and Si

    International Nuclear Information System (INIS)

    Song Shuangxi; Liu Yuzhang; Mao Dali; Ling Huiqin; Li Ming

    2005-01-01

    In this work, we have studied the diffusion barrier performances of Mo, Mo-N and Mo/Mo-N metallization layers deposited by sputtering Mo in Ar/N 2 atmospheres, respectively. Samples were subsequently annealed at different temperatures ranging from 400 to 800 deg C in vacuum condition. The film properties and their suitability as diffusion barriers and protective coatings in silicon devices were characterized using four-point probe measurement, X-ray diffractometry, scanning electron microscopy, Auger electron spectroscopy and transmission electron microscopy analyses. Experimental results revealed that the Mo (20 nm)/Mo-N (30 nm) layer was able to prevent the diffusion reaction between Cu and Si substrate after being annealed at 600 deg C for 30 min. The adhesion between layers and the content of N atoms are the key parameters to improve the properties of Mo-based barrier materials. The Mo layer interposed between Cu and Mo-N diluted the high nitrogen concentration of the barrier and so enhanced the barrier performances

  3. The front-end electronics for the 1.8-kchannel SiPM tracking plane in the NEW detector

    International Nuclear Information System (INIS)

    Rodríguez, J.; Lorca, D.; Monrabal, F.; Toledo, J.; Esteve, R.

    2015-01-01

    NEW is the first phase of NEXT-100 experiment, an experiment aimed at searching for neutrinoless double-beta decay. NEXT technology combines an excellent energy resolution with tracking capabilities thanks to a combination of optical sensors, PMTs for the energy measurement and SiPMs for topology reconstruction. Those two tools result in one of the highest background rejection potentials in the field. This work describes the tracking plane that will be constructed for the NEW detector which consists of close to 1800 sensors with a 1-cm pitch arranged in twenty-eight 64-SiPM boards. Then it focuses in the development of the electronics needed to read the 1800 channels with a front-end board that includes per-channel differential transimpedance input amplifier, gated integrator, automatic offset voltage compensation and 12-bit ADC. Finally, a description of how the FPGA buffers data, carries out zero suppression and sends data to the DAQ interface using CERN RD-51 SRS's DTCC link specification complements the description of the electronics of the NEW detector tracking plane

  4. Effect of SiO{sub 2} coating in bolometric Ge light detectors for rare event searches

    Energy Technology Data Exchange (ETDEWEB)

    Beeman, J.W. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gentils, A. [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Giuliani, A., E-mail: andrea.giuliani@csnsm.in2p3.fr [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Mancuso, M. [Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Pessina, G. [Università di Milano-Bicocca, Dipartimento di Fisica, and INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Plantevin, O. [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Rusconi, C. [Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy)

    2013-05-01

    In germanium-based light detectors for scintillating bolometers, a SiO{sub 2} anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25–35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ∼630nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope {sup 82}Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO{sub 2} coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

  5. Pilot tests of a PET detector using the TOF-PET ASIC based on monolithic crystals and SiPMs

    International Nuclear Information System (INIS)

    Aguilar, A.; González-Montoro, A.; González, A.J.; Hernández, L.; Monzó, J.M.; Benlloch, J.M.; Bugalho, R.; Ferramacho, L.

    2016-01-01

    In this work we show pilot tests of PET detector blocks using the TOF-PET ASIC, coupled to SiPM detector arrays and different crystal configurations. We have characterized the main ASIC features running calibration processes to compensate the time dispersion among the different ASIC/SiPM paths as well as for the time walk on the arrival of optical photons. The aim of this work is to use of LYSO monolithic crystals and explore their photon Depth of Interaction (DOI) capabilities, keeping good energy and spatial resolutions. First tests have been carried out with crystal arrays. Here we made it possible to reach a coincidence resolving times (CRT) of 370 ps FWHM, with energy resolutions better than 20% and resolving well 2 mm sized crystal elements. When using monolithic crystals, a single-pixel LYSO reference crystal helped to explore the CRT performance. We studied different strategies to provide the best timestamp determination in the monolithic scintillator. Times around 1 ns FWHM have been achieved in these pilot studies. In terms of spatial and energy resolution, values of about 3 mm and better than 30% were found, respectively. We have also demonstrated the capability of this system (monolithic and ASIC) to return accurate DOI information.

  6. Performance and emission characteristics of the thermal barrier coated SI engine by adding argon inert gas to intake mixture

    Directory of Open Access Journals (Sweden)

    T. Karthikeya Sharma

    2015-11-01

    Full Text Available Dilution of the intake air of the SI engine with the inert gases is one of the emission control techniques like exhaust gas recirculation, water injection into combustion chamber and cyclic variability, without scarifying power output and/or thermal efficiency (TE. This paper investigates the effects of using argon (Ar gas to mitigate the spark ignition engine intake air to enhance the performance and cut down the emissions mainly nitrogen oxides. The input variables of this study include the compression ratio, stroke length, and engine speed and argon concentration. Output parameters like TE, volumetric efficiency, heat release rates, brake power, exhaust gas temperature and emissions of NOx, CO2 and CO were studied in a thermal barrier coated SI engine, under variable argon concentrations. Results of this study showed that the inclusion of Argon to the input air of the thermal barrier coated SI engine has significantly improved the emission characteristics and engine’s performance within the range studied.

  7. Characteristic performance evaluation of a photon counting Si strip detector for low dose spectral breast CT imaging

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Hyo-Min; Ding, Huanjun; Molloi, Sabee, E-mail: symolloi@uci.edu [Department of Radiological Sciences, University of California, Irvine, California 92697 (United States); Barber, William C.; Iwanczyk, Jan S. [DxRay Inc., Northridge, California 91324 (United States)

    2014-09-15

    Purpose: The possible clinical applications which can be performed using a newly developed detector depend on the detector's characteristic performance in a number of metrics including the dynamic range, resolution, uniformity, and stability. The authors have evaluated a prototype energy resolved fast photon counting x-ray detector based on a silicon (Si) strip sensor used in an edge-on geometry with an application specific integrated circuit to record the number of x-rays and their energies at high flux and fast frame rates. The investigated detector was integrated with a dedicated breast spectral computed tomography (CT) system to make use of the detector's high spatial and energy resolution and low noise performance under conditions suitable for clinical breast imaging. The aim of this article is to investigate the intrinsic characteristics of the detector, in terms of maximum output count rate, spatial and energy resolution, and noise performance of the imaging system. Methods: The maximum output count rate was obtained with a 50 W x-ray tube with a maximum continuous output of 50 kVp at 1.0 mA. A{sup 109}Cd source, with a characteristic x-ray peak at 22 keV from Ag, was used to measure the energy resolution of the detector. The axial plane modulation transfer function (MTF) was measured using a 67 μm diameter tungsten wire. The two-dimensional (2D) noise power spectrum (NPS) was measured using flat field images and noise equivalent quanta (NEQ) were calculated using the MTF and NPS results. The image quality parameters were studied as a function of various radiation doses and reconstruction filters. The one-dimensional (1D) NPS was used to investigate the effect of electronic noise elimination by varying the minimum energy threshold. Results: A maximum output count rate of 100 million counts per second per square millimeter (cps/mm{sup 2}) has been obtained (1 million cps per 100 × 100 μm pixel). The electrical noise floor was less than 4 keV. The

  8. Diffusion barriers for Cu metallisation in Si integrated circuits : deposition and related thin film properties

    NARCIS (Netherlands)

    van Nieuwkasteele-Bystrova, Svetlana Nikolajevna

    2004-01-01

    In modern integrated circuits with Cu interconnects a diffusion barrier is used between the dielectric and Cu in order to prevent diffusion of Cu through the dielectrics. The choice of such a barrier requires a material exploration and a study of the material reactivity with both Cu and the

  9. SiC fiber and yttria-stabilized zirconia composite thick thermal barrier coatings fabricated by plasma spray

    Science.gov (United States)

    Ma, Rongbin; Cheng, Xudong; Ye, Weiping

    2015-12-01

    Approximately 4 mm-thick SiC fiber/yttria-stabilized zirconia (YSZ) composite thermal barrier coatings (TBCs) were prepared by atmospheric plasma spray (APS). The composite coatings have a 'reinforced concrete frame structure', which can protect the coating from failure caused by increasing thickness of coating. The SiC fiber plays an important role in reducing the residual stress level of the composite coatings. The thermal conductivity (TC) value of the composite coatings is 0.632 W/m K, which is about 50% reduction compared to that of typical APS YSZ TBCs. And the composite coatings have higher fracture toughness and better thermal shock resistance than the YSZ TBCs.

  10. Small suppression of the complete fusion of {sup 6}Li + {sup 28}Si reaction at near barrier energies

    Energy Technology Data Exchange (ETDEWEB)

    Sinha, Mandira [Bose Institute, Department of Physics, Kolkata (India); Lubian, J. [Universidade Federal Fluminense, Instituto de Fisica, Niteroi, Rio de Janeiro (Brazil)

    2017-11-15

    The incomplete fusion cross section of the {sup 6}Li + {sup 28}Si weakly bound system at above barrier energies was deduced from the measured γ-ray cross sections. The complete fusion cross section was estimated from the measured total fusion and incomplete fusion cross section and is found to be 85-100% of the total fusion cross section. The coupled channel calculation has been performed considering ground and first excited states of {sup 28}Si target. The fusion cross section estimated from coupled channel calculation shows good agreement with measured total fusion cross section at higher energies. The suppression of about 15% of the fusion cross section predicted by coupled channel calculation shows good agreement with the complete fusion cross section. The effect of the channel couplings on the elastic scattering angular distribution is also investigated. (orig.)

  11. Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

    Energy Technology Data Exchange (ETDEWEB)

    Pastuović, Željko, E-mail: zkp@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Capan, Ivana [Material Physics Division, Institute Rudjer Boskovic, PO Box 180, 10000 Zagreb (Croatia); Cohen, David D. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Forneris, Jacopo [Physics Department and NIS Excellence Centre, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Iwamoto, Naoya; Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Siegele, Rainer [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Hoshino, Norihiro; Tsuchida, Hidekazu [Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan)

    2015-04-01

    We studied the radiation hardness of 4H-SiC Schottky barrier diodes (SBD) for the light ion detection and spectroscopy in harsh radiation environments. n-Type SBD prepared on nitrogen-doped (∼4 × 10{sup 14} cm{sup −3}) epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanning alpha particle microbeam (2 and 4 MeV He{sup 2+} ions separately) in order to create patterned damage structures at different depths within a sensitive volume of tested diodes. Deep Level Transient Spectroscopy (DLTS) analysis revealed the formation of two deep electron traps in the irradiated and not thermally treated 4H-SiC within the ion implantation range (E1 and E2). The E2 state resembles the well-known Z{sub 1/2} center, while the E1 state could not be assigned to any particular defect reported in the literature. Ion Beam Induced Charge (IBIC) microscopy with multiple He ion probe microbeams (1–6 MeV) having different penetration depths in tested partly damaged 4H-SiC SBD has been used to determine the degradation of the charge collection efficiency (CCE) over a wide fluence range of damaging alpha particle. A non-linear behavior of the CCE decrease and a significant degradation of the spectroscopic performance with increasing He ion fluence were observed above the value of 10{sup 11} cm{sup −2}.

  12. Yb2Si2O7 Environmental Barrier Coatings Deposited by Various Thermal Spray Techniques: A Preliminary Comparative Study

    Science.gov (United States)

    Bakan, Emine; Marcano, Diana; Zhou, Dapeng; Sohn, Yoo Jung; Mauer, Georg; Vaßen, Robert

    2017-08-01

    Dense, crack-free, uniform, and well-adhered environmental barrier coatings (EBCs) are required to enhance the environmental durability of silicon (Si)-based ceramic matrix composites in high pressure, high gas velocity combustion atmospheres. This paper represents an assessment of different thermal spray techniques for the deposition of Yb2Si2O7 EBCs. The Yb2Si2O7 coatings were deposited by means of atmospheric plasma spraying (APS), high-velocity oxygen fuel spraying (HVOF), suspension plasma spraying (SPS), and very low-pressure plasma spraying (VLPPS) techniques. The initial feedstock, as well as the deposited coatings, were characterized and compared in terms of their phase composition. The as-sprayed amorphous content, microstructure, and porosity of the coatings were further analyzed. Based on this preliminary investigation, the HVOF process stood out from the other techniques as it enabled the production of vertical crack-free coatings with higher crystallinity in comparison with the APS and SPS techniques in atmospheric conditions. Nevertheless, VLPPS was found to be the preferred process for the deposition of Yb2Si2O7 coatings with desired characteristics in a controlled-atmosphere chamber.

  13. A Fast Calibration System for SiPM Based Scintillator HCAL Detector

    CERN Document Server

    Polak, I

    2015-01-01

    with mid-range a fixed-intensity light pulse. The full SiPM response function is cross-checked by varying the light intensity from zero to the saturation level. In calibration systems we developed, we concentrate especially on the aspect a high dynamic range of pre...

  14. Development of capacitive multiplexing circuit for SiPM-based time-of-flight (TOF) PET detector.

    Science.gov (United States)

    Choe, Hyeok-Jun; Choi, Yong; Hu, Wei; Yan, Jianhua; Ho Jung, Jin

    2017-04-07

    There has been great interest in developing a time-of-flight (TOF) PET to improve the signal-to-noise ratio of PET image relative to that of non-TOF PET. Silicon photomultiplier (SiPM) arrays have attracted attention for use as a fast TOF PET photosensor. Since numerous SiPM arrays are needed to construct a modern human PET, a multiplexing method providing both good timing performance and high channel reduction capability is required to develop a SiPM-based TOF PET. The purpose of this study was to develop a capacitive multiplexing circuit for the SiPM-based TOF PET. The proposed multiplexing circuit was evaluated by measuring the coincidence resolving time (CRT) and the energy resolution as a function of the overvoltage using three different capacitor values of 15, 30, and 51 pF. A flood histogram was also obtained and quantitatively assessed. Experiments were performed using a [Formula: see text] array of [Formula: see text] mm 2 SiPMs. Regarding the capacitor values, the multiplexing circuit using a smaller capacitor value showed the best timing performance. On the other hand, the energy resolution and flood histogram quality of the multiplexing circuit deteriorated as the capacitor value became smaller. The proposed circuit was able to achieve a CRT of [Formula: see text] ps FWHM and an energy resolution of 17.1[Formula: see text] with a pair of [Formula: see text] mm 3 LYSO crystals using a capacitor value of 30 pF at an overvoltage of 3.0 V. It was also possible to clearly resolve a [Formula: see text] array of LYSO crystals in the flood histogram using the multiplexing circuit. The experiment results indicate that the proposed capacitive multiplexing circuit is useful to obtain an excellent timing performance and a crystal-resolving capability in the flood histogram with a minimal degradation of the energy resolution, as well as to reduce the number of the readout channels of the SiPM-based TOF PET detector.

  15. Performance Study of an aSi Flat Panel Detector for Fast Neutron Imaging of Nuclear Waste

    Energy Technology Data Exchange (ETDEWEB)

    Schumann, M.; Mauerhofer, E. [Institute of Energy and Climate Research - Nuclear Waste Management and Reactor Safety, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Engels, R.; Kemmerling, G. [Central Institute for Engineering, Electronics and Analytics - Electronic Systems, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Frank, M. [MATHCCES - Department of Mathematics, RWTH Aachen University, 52062 Aachen (Germany); Havenith, A.; Kettler, J.; Klapdor-Kleingrothaus, T. [Institute of Nuclear Engineering and Technology Transfer, RWTH Aachen University, 52062 Aachen (Germany); Schitthelm, O. [Corporate Technology, Siemens AG, 91058 Erlangen (Germany)

    2015-07-01

    Radioactive waste must be characterized to check its conformance for intermediate storage and final disposal according to national regulations. For the determination of radio-toxic and chemo-toxic contents of radioactive waste packages non-destructive analytical techniques are preferentially used. Fast neutron imaging is a promising technique to assay large and dense items providing, in complementarity to photon imaging, additional information on the presence of structures in radioactive waste packages. Therefore the feasibility of a compact Neutron Imaging System for Radioactive waste Analysis (NISRA) using 14 MeV neutrons is studied in a cooperation framework of Forschungszentrum Juelich GmbH, RWTH Aachen University and Siemens AG. However due to the low neutron emission of neutron generators in comparison to research reactors the challenging task resides in the development of an imaging detector with a high efficiency, a low sensitivity to gamma radiation and a resolution sufficient for the purpose. The setup is composed of a commercial D-T neutron generator (Genie16GT, Sodern) with a surrounding shielding made of polyethylene, which acts as a collimator and an amorphous silicon flat panel detector (aSi, 40 x 40 cm{sup 2}, XRD-1642, Perkin Elmer). Neutron detection is achieved using a general propose plastic scintillator (EJ-260, Eljen Technology) linked to the detector. The thermal noise of the photodiodes is reduced by employing an entrance window made of aluminium. Optimal gain and integration time for data acquisition are set by measuring the response of the detector to the radiation of a 500 MBq {sup 241}Am-source. Detector performance was studied by recording neutron radiography images of materials with various, but well known, chemical compositions, densities and dimensions (Al, C, Fe, Pb, W, concrete, polyethylene, 5 x 8 x 10 cm{sup 3}). To simulate gamma-ray emitting waste radiographs in presence of a gamma-ray sources ({sup 60}Co, {sup 137}Cs, {sup 241

  16. An educational distributed Cosmic Ray detector network based on ArduSiPM

    Science.gov (United States)

    Bocci, V.; Chiodi, G.; Fresch, P.; Iacoangeli, F.; Recchia, L.

    2017-10-01

    The advent of high performance microcontrollers equipped with analog and digital peripherals, makes the design of a complete particle detector and a relative acquisition system on a single microcontroller chip possible. The existence of a world wide data infrastructure such as the internet, allows for the conception of a distributed network of cheap detectors able to elaborate and send data as well as to respond to setting commands. The internet infrastructure enables the distribution of the absolute time, with precision of a few milliseconds, to all devices independently of their physical location, when the sky view is accessible it possible to use a GPS module to reach synchronization of tens of nanoseconds. These devices can be far apart from each other and their relative distance can range from a few meters to thousands of kilometers. This allows for the design of a crowdsourcing experiment of citizen science, based on the use of many small scintillation-based particle detectors to monitor the high energetic cosmic ray and the radiation environment.

  17. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

    International Nuclear Information System (INIS)

    Zheng Liu; Zhang Feng; Liu Sheng-Bei; Dong Lin; Liu Xing-Fang; Liu Bin; Yan Guo-Guo; Wang Lei; Zhao Wan-Shun; Sun Guo-Sheng; He Zhi; Fan Zhong-Chao; Yang Fu-Hua

    2013-01-01

    4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm 2 with a total active area of 2.46 × 10 −3 cm 2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10 −5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Photocurrent Cancellation Due to Barrier Asymmetry in GaAs/AlGaAs Heterostructure Infrared Detectors

    Science.gov (United States)

    2014-05-01

    response time. The III-V compounds of gallium arsenide and aluminum 9 gallium arsenide (AlGaAs) are the principle materials used in this study of...negative and positive applied bias, and shows increasing potential offset with increasing aluminum fraction of the AlxGa1- 1. REPORT DATE (DD-MM-YYYY) 4...negative and positive applied bias, and shows increasing potential offset with increasing aluminum fraction of the AlxGa1-xAs barriers.This barrier

  19. Study of n- γ discrimination by zero-crossing method with SiPM based scintillation detectors

    Science.gov (United States)

    Grodzicka-Kobylka, M.; Szczesniak, T.; Moszyński, M.; Swiderski, L.; Wolski, D.; Baszak, J.; Korolczuk, S.; Schotanus, P.

    2018-03-01

    The paper presents a study of n / γ discrimination with 4x4 ch and 8x8 ch Multi Pixel Photon Counter (MPPC) arrays in neutron detectors based on Stilbene and EJ299-33 plastic scintillators. The n / γ discrimination showed an excellent capability of the MPPC arrays, comparable to that observed earlier with the classical PMTs. Particularly, an application of a zero-crossing method of n - γ discrimination prevented deterioration of the discrimination by the slow response of the Silicon Photomultiplier (SiPM, or MPPC interchangeably) array related to its large capacitance. It was confirmed by a good agreement of the Figure of Merit normalized to the number of photoelectrons determined for the MPPC arrays and XP5500 PMT.

  20. Commissioning of the scatter component of a Compton camera consisting of a stack of Si strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Liprandi, S.; Marinsek, T.; Bortfeldt, J.; Lang, C.; Lutter, R.; Dedes, G.; Parodi, K.; Thirolf, P.G. [LMU Munich, Garching (Germany); Aldawood, S. [LMU Munich, Garching (Germany); King Saud University, Riyadh (Saudi Arabia); Maier, L.; Gernhaeuser, R. [TU Munich, Garching (Germany); Kolff, H. van der [LMU Munich, Garching (Germany); TU Delft (Netherlands); Castelhano, I. [LMU Munich, Garching (Germany); University of Lisbon, Lisbon (Portugal); Schaart, D.R. [TU Delft (Netherlands)

    2015-07-01

    At LMU Munich in Garching a Compton camera is presently being developed aiming at the range verification of proton (or ion) beams for hadron therapy via imaging of prompt γ rays from nuclear reactions in the tissue. The poster presentation focuses on the characterization of the scatter component of the Compton camera, consisting of a stack of six double-sided Si strip detectors (50 x 50 mm{sup 2}, 0.5 mm thick, 128 strips/side). The overall 1536 electronics channels are processed by a readout system based on the GASSIPLEX ASIC chip, feeding into a VME-based data acquisition system. The status of the offline and online characterization studies is presented.

  1. Time resolution below 100 ps for the SciTil detector of PANDA employing SiPM

    Science.gov (United States)

    Brunner, S. E.; Gruber, L.; Marton, J.; Orth, H.; Suzuki, K.

    2014-03-01

    The barrel time-of-flight (TOF) detector for the bar PANDA experiment at FAIR in Darmstadt is planned as a scintillator tile hodoscope (SciTil) using 8000 small scintillator tiles. It will provide fast event timing for a software trigger in the otherwise trigger-less data acquisition scheme of bar PANDA, relative timing in a multiple track event topology as well as additional particle identification in the low momentum region. The goal is to achieve a time resolution of σ simeq 100 ps. We have conducted measurements using organic scintillators coupled to Silicon Photomultipliers (SiPM). The results are encouraging such that we are confident to reach the required system time resolution.

  2. Muon detection with scintillation detectors using indirect SiPM readout

    CERN Document Server

    Struth, Janina

    2010-01-01

    In the scope of this thesis prototypes of silicon photomultipliers with wavelength shifting fibres were measured for muon detection. This indirect readout happens with silizium photomultipliers (SiPM), which are coupled with the fibre. The scintillator was wrapped with different reflective materials to optimise the light amplification. Furthermore two different thicknesses of the scintillator were used to have a comparison between the different light yield. Consequently different scintillator thicknesses were combinded and measured with different wrapping materials to compare their efficiency.

  3. Radiation effects in the Si-PIN detector on the Near Earth Asteroid Rendezvous mission

    CERN Document Server

    Starr, R; Evans, L G; Floyd, S R; McClanahan, T P; Trombka, J I; Goldsten, J O; Maurer, R H; McNutt, R L; Roth, D R

    1999-01-01

    A Si-PIN photodiode is being used as a solar X-ray monitor on the X-ray/gamma-ray spectrometer experiment which is flying on the Near Earth Asteroid Rendezvous spacecraft. Since its launch in February 1996 this photodiode has experienced several brief failures. These anomalies and other performance characteristics will be described. Efforts to reproduce these failures in ground tests with flight spare equipment will also be discussed.

  4. Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

    Science.gov (United States)

    Mannan, Mohammad A.; Chaudhuri, Sandeep K.; Nguyen, Khai V.; Mandal, Krishna C.

    2014-06-01

    Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm thick n-type 4H-SiC epitaxial layers containing Z1/2, EH5, and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z1/2 defects was found to be 1.7 × 1013 cm-3. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm2 large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V.

  5. Modified-chitosan/siRNA nanoparticles downregulate cellular CDX2 expression and cross the gastric mucus barrier.

    Directory of Open Access Journals (Sweden)

    Ana Sadio

    Full Text Available Development of effective non-viral vectors is of crucial importance in the implementation of RNA interference in clinical routine. The localized delivery of siRNAs to the gastrointestinal mucosa is highly desired but faces specific problems such as the stability in gastric acidity conditions and the presence of the mucus barrier. CDX2 is a transcription factor critical for intestinal differentiation being involved in the initiation and maintenance of gastrointestinal diseases. Specifically, it is the trigger of gastric intestinal metaplasia which is a precursor lesion of gastric cancer. Its expression is also altered in colorectal cancer, where it may constitute a lineage-survival oncogene. Our main objective was to develop a nanoparticle-delivery system of siRNA targeting CDX2 using modified chitosan as a vector. CDX2 expression was assessed in gastric carcinoma cell lines and nanoparticles behaviour in gastrointestinal mucus was tested in mouse explants. We show that imidazole-modified chitosan and trimethylchitosan/siRNA nanoparticles are able to downregulate CDX2 expression and overpass the gastric mucus layer but not colonic mucus. This system might constitute a potential therapeutic approach to treat CDX2-dependent gastric lesions.

  6. SiC Schottky Diode Detectors for Measurement of Actinide Concentrations from Alpha Activities in Molten Salt Electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States); Blue, Thomas [The Ohio State Univ., Columbus, OH (United States)

    2013-01-28

    In this project, we have designed a 4H-SiC Schottky diode detector device in order to monitor actinide concentrations in extreme environments, such as present in pyroprocessing of spent fuel. For the first time, we have demonstrated high temperature operation of such a device up to 500 °C in successfully detecting alpha particles. We have used Am-241 as an alpha source for our laboratory experiments. Along with the experiments, we have developed a multiscale model to study the phenomena controlling the device behavior and to be able to predict the device performance. Our multiscale model consists of ab initio modeling to understand defect energetics and their effect on electronic structure and carrier mobility in the material. Further, we have developed the basis for a damage evolution model incorporating the outputs from ab initio model in order to predict respective defect concentrations in the device material. Finally, a fully equipped TCAD-based device model has been developed to study the phenomena controlling the device behavior. Using this model, we have proven our concept that the detector is capable of performing alpha detection in a salt bath with the mixtures of actinides present in a pyroprocessing environment.

  7. Integration of Si-CMOS embedded photo detector array and mixed signal processing system with embedded optical waveguide input

    Science.gov (United States)

    Kim, Daeik D.; Thomas, Mikkel A.; Brooke, Martin A.; Jokerst, Nan M.

    2004-06-01

    Arrays of embedded bipolar junction transistor (BJT) photo detectors (PD) and a parallel mixed-signal processing system were fabricated as a silicon complementary metal oxide semiconductor (Si-CMOS) circuit for the integration optical sensors on the surface of the chip. The circuit was fabricated with AMI 1.5um n-well CMOS process and the embedded PNP BJT PD has a pixel size of 8um by 8um. BJT PD was chosen to take advantage of its higher gain amplification of photo current than that of PiN type detectors since the target application is a low-speed and high-sensitivity sensor. The photo current generated by BJT PD is manipulated by mixed-signal processing system, which consists of parallel first order low-pass delta-sigma oversampling analog-to-digital converters (ADC). There are 8 parallel ADCs on the chip and a group of 8 BJT PDs are selected with CMOS switches. An array of PD is composed of three or six groups of PDs depending on the number of rows.

  8. Digital Processing of Medical Images Obtained by a Si Microstrips Detector

    International Nuclear Information System (INIS)

    Diaz, Claudia C.; Montano, Luis M.; Fontaine, Marcos; Leyva, Antonio; Ortiz, Carlos M.

    2006-01-01

    We studied the capability of Matlab in digital processing of breast tissues images with microcalcifications. We obtained digital images of different byopsies through a Bede X-ray tube, fixed at 20 kV and 1 mA. Radiation exposition time was varied. The byopsies were placed between a 120μm collimator and a 128 strips detector, which was used to measure the absorption of X rays in the tissue. Matlab allowed the manipulation of digital images, and this software was intended to improve the identification of microcalcifications in breast tissues

  9. Simulation of Si P-i-N diodes for use in a positron emission tomography detector module

    International Nuclear Information System (INIS)

    Bailey, M.J.; University of Wollongong, NSW; Rosenfeld, A.; Lerch, M.; Taylor, G.; Heiser, G.

    2000-01-01

    Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

  10. Evaluation of a SiPM array detector coupled to a LFS-3 pixellated scintillator for PET/MR applications

    Energy Technology Data Exchange (ETDEWEB)

    David, Stratos; Fysikopoulos, Eleftherios [Technological Educational Institute of Athens (Greece); Georgiou, Maria [Technological Educational Institute of Athens (Greece); Department of Medical School, University of Thessaly, Larissa (Greece); Loudos, George [Technological Educational Institute of Athens (Greece)

    2015-05-18

    SiPM arrays are insensitive to magnetic fields and thus good candidates for hybrid PET/MR imaging systems. Moreover, due to their small size and flexibility can be used in dedicated small field of view small animal imaging detectors and especially in head PET/MR studies in mice. Co-doped LFS-3 scintillator crystals have higher light yield and slightly faster response than that of LSO:Ce mainly due to the co-doped activation of emission centers with varying materials such as Ce, Gd, Sc, Y, La, Tb, or Ca distributed at the molecular scale through the lutetium silicate crystal host. The purpose of this study is to investigate the behavior of the SensL ArraySL-4 (4x4 element array of 3x3 mm{sup 2} silicon photomultipliers) optical detector coupled to a 6x6 LFS-3 scintillator array, with 2x2x5 mm{sup 3} crystal size elements, for possible applications in small field of view PET/MR imaging detectors. We have designed a symmetric resistive charge division circuit to read out the signal outputs of 4x4 pixel SiPM array reducing the 16 pixel outputs of the photodetector to 4 position signals. The 4 position signals were digitized using free running Analog to Digital Converters. The ADCs sampling rate was 50 MHz. An FPGA (Spartan 6 LX150T) was used for triggering and digital signal processing of the pulses. Experimental evaluation was carried out with {sup 22}Na radioactive source and the parameters studied where energy resolution and peak to valley ratio. The first preliminary results of the evaluation shows a clear visualization of the discrete 2x2x5 mm{sup 3} LFS-3 scintillator elements. The mean peak to valley ratio of the horizontal profiles on the raw image was measured equal to 11 while the energy resolution was calculated equal to 30% at the central pixels.

  11. Sub-200 ps CRT in monolithic scintillator PET detectors using digital SiPM arrays and maximum likelihood interaction time estimation

    International Nuclear Information System (INIS)

    Van Dam, Herman T; Borghi, Giacomo; Seifert, Stefan; Schaart, Dennis R

    2013-01-01

    Digital silicon photomultiplier (dSiPM) arrays have favorable characteristics for application in monolithic scintillator detectors for time-of-flight positron emission tomography (PET). To fully exploit these benefits, a maximum likelihood interaction time estimation (MLITE) method was developed to derive the time of interaction from the multiple time stamps obtained per scintillation event. MLITE was compared to several deterministic methods. Timing measurements were performed with monolithic scintillator detectors based on novel dSiPM arrays and LSO:Ce,0.2%Ca crystals of 16 × 16 × 10 mm 3 , 16 × 16 × 20 mm 3 , 24 × 24 × 10 mm 3 , and 24 × 24 × 20 mm 3 . The best coincidence resolving times (CRTs) for pairs of identical detectors were obtained with MLITE and measured 157 ps, 185 ps, 161 ps, and 184 ps full-width-at-half-maximum (FWHM), respectively. For comparison, a small reference detector, consisting of a 3 × 3 × 5 mm 3 LSO:Ce,0.2%Ca crystal coupled to a single pixel of a dSiPM array, was measured to have a CRT as low as 120 ps FWHM. The results of this work indicate that the influence of the optical transport of the scintillation photons on the timing performance of monolithic scintillator detectors can at least partially be corrected for by utilizing the information contained in the spatio-temporal distribution of the collection of time stamps registered per scintillation event. (paper)

  12. Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  13. Investigation on the charge collection properties of a 4H-SiC Schottky diode detector

    CERN Document Server

    Verzellesi, G; Nava, F; Canali, C

    2002-01-01

    We present experimental and theoretical data on the charge collection properties of a 4H-SiC epitaxial Schottky diode exposed to 5.48- and 2.00-MeV alpha particles. Hundred percent Charge Collection Efficiency (CCE) is, in particular, demonstrated for the 2.00-MeV alpha particles at reverse voltages higher than 40 V. By comparing measured CCE values with the outcomes of drift-diffusion simulations, a value of 500 ns is inferred for the hole lifetime within the lowly doped, active layer of virgin samples. The contributions of diffusion and funneling-assisted drift to CCE at low reverse voltages are pointed out.

  14. Prototype Si microstrip sensors for the CDF-II ISL detector

    CERN Document Server

    Hara, K; Kanao, K; Kim, S; Ogasawara, M; Ohsugi, T; Shimojima, M; Takikawa, K

    1999-01-01

    Prototype Si microstrip sensors for the CDF-II ISL were fabricated by Hamamatsu Photonics and SEIKO Instruments using 4'' technology. The sensor is AC coupled and double-sided forming a stereo angle of 1.207 degree sign . The strip pitch is 112 mu m on both sides. The main differences between the two manufacturers lie on the technologies of passivation and the structure of coupling capacitors. We describe the design of the sensor and evaluation results of the performance. The evaluations include the total and individual strip currents and interstrip capacitance measured before and after sup 6 sup 0 Co gamma irradiation. (author)

  15. The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2

    Directory of Open Access Journals (Sweden)

    Lin-Yue Liu

    2017-10-01

    Full Text Available Silicon carbide (SiC detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments.

  16. Funneling effect of alpha particles on the charge collection efficiency in N type silicon surface barrier detector

    International Nuclear Information System (INIS)

    Boorboor, S.; Feghhi, S.A.H.; Jafari, H.

    2014-01-01

    Highlights: • Field funneling due to SEE in microelectronic device affects the charge collection efficiency. • Charge collection efficiency from alpha particles in a N type SSB device was calculated. • GEANT4, a Monte Carlo code and ATLAS, a numerical code have been used. • The simulation results have been validated through comparison with the experimental results. - Abstract: There are three different mechanisms of charge collection in a semiconductor charge particle detector, such as the drift of carriers in depletion zone, the drift of carriers in an extended electrical field along the ion track or funneling effect and the diffusion of carriers. In this work, the funneling effect on charge collection efficiency due to alpha particle track in a N type silicon surface barrier detector has been investigated. GEANT4, as Monte Carlo code, has been used for estimation of the deposit energy distribution in the component. In addition, the semiconductor device simulator, ATLAS, has been used in calculation of charge collection efficiency. The simulation results have been validated through comparison with the available experimental results. The calculated charge collection efficiency has good agreement with experiment. Without considering the funneling effect and diffusion, the calculation results underestimate the charge collection efficiency within 60%. Our overall results were indicative of the fact that considering funneling effect, considerably improves the accuracy of the charge collection efficiency estimation

  17. Low power frontend ASIC (Anusuchak) for dosimeter using Si-PIN detector

    International Nuclear Information System (INIS)

    Darad, A.; Chandratre, V.B.

    2010-01-01

    A low power ASIC (Anusuchak) for silicon PIN detector signal processing channel designed for pocket dosimeter in 0.35 μm CMOS process. The ASIC contains two channels one for Beta particle and other for Gamma ray. The channel is a CSA integrated with a shaper, gain stage and comparator with total power consumption of 4.6 mW. The ASIC has gain of 12 mV/fC and can be raised to 29 mV/fC without degrading the noise, power or linearity specification of the channel. The channel has a peaking time of 1.2 μs with baseline recovery within 5.3 μs and noise figure of 420 e- at 0 pF. The noise slope is 17 e-/pF. The ASIC is designed for single supply of 3.3 V for which battery is available. (author)

  18. Influence of average ion energy and atomic oxygen flux per Si atom on the formation of silicon oxide permeation barrier coatings on PET

    Science.gov (United States)

    Mitschker, F.; Wißing, J.; Hoppe, Ch; de los Arcos, T.; Grundmeier, G.; Awakowicz, P.

    2018-04-01

    The respective effect of average incorporated ion energy and impinging atomic oxygen flux on the deposition of silicon oxide (SiO x ) barrier coatings for polymers is studied in a microwave driven low pressure discharge with additional variable RF bias. Under consideration of plasma parameters, bias voltage, film density, chemical composition and particle fluxes, both are determined relative to the effective flux of Si atoms contributing to film growth. Subsequently, a correlation with barrier performance and chemical structure is achieved by measuring the oxygen transmission rate (OTR) and by performing x-ray photoelectron spectroscopy. It is observed that an increase in incorporated energy to 160 eV per deposited Si atom result in an enhanced cross-linking of the SiO x network and, therefore, an improved barrier performance by almost two orders of magnitude. Furthermore, independently increasing the number of oxygen atoms to 10 500 per deposited Si atom also lead to a comparable barrier improvement by an enhanced cross-linking.

  19. Noise in a-Si:H p-i-n detector diodes

    International Nuclear Information System (INIS)

    Cho, G.; Qureshi, S.; Drewery, J.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1991-10-01

    Noise of a-Si:H p-i-n diodes (5 ∼ 50 μm thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component at zero biased diodes

  20. Performance comparison of Si-PM-based block detectors with different pixel sizes for an ultrahigh-resolution small-animal PET system

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Seiichi [Kobe City College of Technology, Kobe (Japan); Watabe, Hiroshi; Hatazawa, Jun, E-mail: s-yama@kobe-kosen.ac.jp [Department of Molecular Imaging in Medicine, Osaka University Graduate School of Medicine, Osaka (Japan)

    2011-10-21

    The silicon photomultiplier (Si-PM) is a promising photodetector for a high-resolution PET scanner due to its small size, high gain and lower sensitivity to magnetic fields. There are several commercially available Si-PM arrays with different pixel sizes and fill factors, and these parameters can affect the performance of a PET block detector read out by these devices. We compared the performance of block detectors using 4 x 4 Si-PM arrays with 25 {mu}m (Hamamatsu S11064-025P) and 50 {mu}m (S11064-050P) pixels combined with the same 15 x 15 matrix LGSO block made of 0.7 x 0.7 x 6 mm{sup 3} scintillator pixels. Evaluated characteristics include photopeak linearity, energy resolution and positioning performance. Although the photopeak linearity and energy resolution are slightly better for the Si-PM with 25 {mu}m pixels, the position performance measured by the separation of the position histogram is significantly better for the Si-PM with 50 {mu}m pixels. We conclude that using the Si-PM with 50 {mu}m pixels will provide a better solution for the development of ultrahigh-resolution PET systems. (note)

  1. Performance comparison of Si-PM-based block detectors with different pixel sizes for an ultrahigh-resolution small-animal PET system

    International Nuclear Information System (INIS)

    Yamamoto, Seiichi; Watabe, Hiroshi; Hatazawa, Jun

    2011-01-01

    The silicon photomultiplier (Si-PM) is a promising photodetector for a high-resolution PET scanner due to its small size, high gain and lower sensitivity to magnetic fields. There are several commercially available Si-PM arrays with different pixel sizes and fill factors, and these parameters can affect the performance of a PET block detector read out by these devices. We compared the performance of block detectors using 4 x 4 Si-PM arrays with 25 μm (Hamamatsu S11064-025P) and 50 μm (S11064-050P) pixels combined with the same 15 x 15 matrix LGSO block made of 0.7 x 0.7 x 6 mm 3 scintillator pixels. Evaluated characteristics include photopeak linearity, energy resolution and positioning performance. Although the photopeak linearity and energy resolution are slightly better for the Si-PM with 25 μm pixels, the position performance measured by the separation of the position histogram is significantly better for the Si-PM with 50 μm pixels. We conclude that using the Si-PM with 50 μm pixels will provide a better solution for the development of ultrahigh-resolution PET systems. (note)

  2. Development Status and Performance Comparisons of Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan

    2016-01-01

    Environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft turbine engine systems, because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. This paper presents current NASA EBC-CMC development emphases including: the coating composition and processing improvements, laser high heat flux-thermal gradient thermo-mechanical fatigue - environmental testing methodology development, and property evaluations for next generation EBC-CMC systems. EBCs processed with various deposition techniques including Plasma Spray, Electron Beam - Physical Vapor Deposition, and Plasma Spray Physical Vapor Deposition (PS-PVD) will be particularly discussed. The testing results and demonstrations of advanced EBCs-CMCs in complex simulated engine thermal gradient cyclic fatigue, oxidizing-steam and CMAS environments will help provide insights into the coating development strategies to meet long-term engine component durability goals.

  3. Si Interface Barrier Modification on Memristor for Brain-Inspired Computing

    Science.gov (United States)

    Wu, Wei; Wu, Huaqiang; Gao, Bin; Qian, He

    2017-06-01

    Memristor is an emerging technology aimed at implementing neuromorphic computing in hardware system. Resistive random access memory (RRAM) is a kind of memristor with excellent performance, but abrupt switching in the set process influences the efficiency of neuromorphic system. In this study, we present an interface switching memristor device based on TiN/Si/TaOx/TiN stack and CMOS compatible fabrication process to achieve gradually resistive switching both in set and reset processes. The devices show a more than 10 switching window. The related switching mechanism is discussed.

  4. Effect of Barrier Metal Based on Titanium or Molybdenum in Characteristics of 4H-SiC Schottky Diodes

    Directory of Open Access Journals (Sweden)

    M. Ben Karoui

    2014-05-01

    Full Text Available The electrical properties were extracted by I-V and C-V analysis, performed from 10 K to 450 K. When the annealing temperature varied to 400 °C, the Schottky barrier height (SBH increased from 0.85 Ev to 1.20 eV in Ti/4H-SiC whereas in the Mo/4H-SiC the SBH varied from 1.04 eV to 1.10 eV. Deformation of J-V-T characteristics was observed in two types of devices when the temperature decreases from 300 K to 10 K. The electrical properties and the stability of the devices have been correlated to the fabrication processes and to the metal/semiconductor interfaces. Mo-based contacts show better behaviour in forward polarization when compared to the Ti-based Schottky contacts, with ideality factors close to the unity even after the annealing process. However, Mo-based contacts show leakage currents higher than that measured on the more optimized Ti-based Schottky.

  5. Key Durability Issues with Mullite-Based Environmental Barrier Coatings for Si-Based Ceramics

    Science.gov (United States)

    Lee, Kang N.

    2000-01-01

    Plasma-sprayed mullite (3Al2O3.2SiO2) and mullite/yttria-stabilized-zirconia (YSZ) dual layer coatings have been developed to protect silicon -based ceramics from environmental attack. Mullite-based coating systems show excellent durability in air. However, in combustion environments, corrosive species such as molten salt or water vapor penetrate through cracks in the coating and attack the Si-based ceramics along the interface. Thus the modification of the coating system for enhanced crack-resistance is necessary for long-term durability in combustion environments. Other key durability issues include interfacial contamination and coating/substrate bonding. Interfacial contamination leads to enhanced oxidation and interfacial pore formation, while a weak coating/substrate bonding leads to rapid attack of the interface by corrosive species, both of which can cause a premature failure of the coating. Interfacial contamination can be minimized by limiting impurities in coating and substrate materials. The interface may be modified to improve the coating/substrate bond.

  6. Detection of 14 MeV neutrons in high temperature environment up to 500 deg. C using 4H-SiC based diode detector

    Energy Technology Data Exchange (ETDEWEB)

    Szalkai, D.; Klix, A. [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344 (Germany); Ferone, R.; Issa, F.; Ottaviani, L.; Vervisch, V. [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231 -13397 Marseille Cedex 20 (France); Gehre, D. [Inst. for Nucl.- and Particle-Phys., Dresden University of Technology, Dresden 01069 (Germany); Lyoussi, A. [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance (France)

    2015-07-01

    In reactor technology and industrial applications detection of fast and thermal neutrons plays a crucial role in getting relevant information about the reactor environment and neutron yield. The inevitable elevated temperatures make neutron yield measurements problematic. Out of the currently available semiconductors 4H-SiC seems to be the most suitable neutron detector material under extreme conditions due to its high heat and radiation resistance, large band-gap and lower cost of production than in case of competing diamond detectors. In the framework of the European I-Smart project, optimal {sup 4}H-SiC diode geometries were developed for high temperature neutron detection and have been tested with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron flux of 10{sup 10}-10{sup 11} n/(s*cm{sup 2}) at Neutron Laboratory of the Technical University of Dresden in Germany from room temperatures up to several hundred degrees Celsius. Based on the results of the diode measurements, detector geometries appear to play a crucial role for high temperature measurements up to 500 deg. C. Experimental set-ups using SiC detectors were constructed to simulate operation in the harsh environmental conditions found in the tritium breeding blanket of the ITER fusion reactor, which is planned to be the location of neutron flux characterization measurements in the near future. (authors)

  7. Energy-dispersive X-ray fluorescence of discarded tire samples, using a Si-PIN detector; Fluorescencia de raios X por dispersao em energia de amostras de pneus inserviveis com detector de Si-Pin

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, Fabio; Appoloni, C.R., E-mail: bonn@uel.b [Universidade Estadual de Londrina (UEL), PR (Brazil). Dept. de Fisica. Lab. de Fisica Nuclear Aplicada; Melquiades, Fabio L. [Universidade Estadual do Centro Oeste (UNICENTRO), Guarapuava, PR (Brazil). Dept. de Fisica

    2007-07-01

    The determination of zinc concentration in samples of discarded tires is of great environmental interest because the process for manufacturing tyres uses S for rubber vulcanization, and ZnO is the reaction catalyst. Discarded tyres are being used in asphalt paving, in the burning process of thermoelectric and cement industries and also for controlling erosion in agricultural areas. Analysis of tyre samples usually requires chemical digestion which is slow and expensive. Aiming to eliminate those limitations, this work uses energy-dispersive X-ray fluorescence (EDXRF) with a portable equipment, once it is a simultaneous multi-element analytical technique, requiring minimal sample preparation. Five samples of discarded tyres have been ground and analysed in the form of pastilles, using a mini X-ray tube (Ag target, MO filter, 25 kV/20 muA) for 200 s, and a Si-PIN semiconductor detector coupled to a multichannel analyser. Zinc concentrations in the range of 40.6 to 44.2 mug g{sup -1} have been obtained, representing 0.4% of the tire composition, which is below the maximum value (2%) recommended by the European Tyre Recycling Association. Concentrations between 0.15 and 0.52 mug g{sup -1} were obtained for Fe

  8. Compact Surface Plasmon Resonance System with Au/Si Schottky Barrier.

    Science.gov (United States)

    Tsukagoshi, Takuya; Kuroda, Yuta; Noda, Kentaro; Binh-Khiem, Nguyen; Kan, Tetsuo; Shimoyama, Isao

    2018-01-30

    Ethanol concentration was quantified by the use of a compact surface plasmon resonance (SPR) system, which electrically detects hot electrons via a Schottky barrier. Although it is well known that SPR can be used as bio/chemical sensors, implementation is not necessarily practical, due to the size and cost impediments associated with a system with variable wavelength or angle of incidence. However, scanning capability is not a prerequisite if the objective is to use SPR in a sensor. It is possible to build a small, inexpensive SPR sensor if the optics have no moving parts and a Schottky barrier is used for electrical current detection in place of a photodetector. This article reports on the design and performance of such a novel SPR sensor, and its application for quantifying ethanol concentration. As the concentration of ethanol is increased, the change in the angle dependence of the SPR current is observed. This change can be understood as a superposition of contributions of SPR coupled with the +3rd- and -3rd-order diffraction. Moreover, real-time monitoring of ethanol concentration was demonstrated using the proposed SPR system.

  9. Equilibrium lines and barriers to phase transitions: the cubic diamond to beta-tin transition in Si from first principles.

    Science.gov (United States)

    Qiu, S L; Marcus, P M

    2012-06-06

    The phase transition between the cubic diamond (cd) and beta-tin (β-Sn) phases of Si under pressure and the region of interaction of the two phases are studied by first-principles total energy calculations. For a non-vibrating crystal we determine the pressure of the thermodynamic phase transition p(t) = 96 kbar, the Gibbs free energy barrier at p(t) of ΔG = 19.6 mRyd/atom that stabilizes the phases against a phase transition and the finite pressure range in which both phases are stable. We show that the phases in that pressure range are completely described by three equilibrium lines of states along which the structure, the total energy E, the hydrostatic pressure p that would stabilize the structure and the values of G all vary. Two equilibrium lines describe the two phases (denoted the ph-eq line, ph is cd or β-Sn phase); a third line is a line of saddle points of G with respect to structure (denoted the sp-eq line) that forms a barrier of larger G against instability of the metastable ranges of the phase lines. An important conclusion is that the sp-eq line merges with the two ph-eq lines: one end of the sp-eq line merges with the cd-eq line at high pressure, the other end merges with the β-Sn-eq line at low pressure. The mergers end the barrier protecting the metastable ranges of the two ph-eq lines, hence the lines go unstable beyond the mergers. The mergers thus simplify the phase diagram by providing a natural termination to the stable parts of all metastable ranges of the ph-eq lines. Although 96 kbar is lower than the experimental transition pressure, we note that phonon pressure raises the observed transition pressure.

  10. The MINDView brain PET detector, feasibility study based on SiPM arrays

    Energy Technology Data Exchange (ETDEWEB)

    González, Antonio J., E-mail: agonzalez@i3m.upv.es [Institute for Instrumentation in Molecular Imaging (I3M), 46022 Valencia (Spain); Majewski, Stan [Radiology Research, Department of Radiology, University of Virginia, VA 22903 (United States); Sánchez, Filomeno [Institute for Instrumentation in Molecular Imaging (I3M), 46022 Valencia (Spain); Aussenhofer, Sebastian [NORAS MRI products GmbH, Hochberg (Germany); Aguilar, Albert; Conde, Pablo; Hernández, Liczandro; Vidal, Luis F. [Institute for Instrumentation in Molecular Imaging (I3M), 46022 Valencia (Spain); Pani, Roberto; Bettiol, Marco; Fabbri, Andrea [Department of Molecular Medicine, Sapienza University of Rome (Italy); Bert, Julien; Visvikis, Dimitris [Université de Bretagne Occidentale, Brest (France); Jackson, Carl; Murphy, John; O’Neill, Kevin [SensL Technologies, Cork (Ireland); Benlloch, Jose M. [Institute for Instrumentation in Molecular Imaging (I3M), 46022 Valencia (Spain)

    2016-05-11

    The Multimodal Imaging of Neurological Disorders (MINDView) project aims to develop a dedicated brain Positron Emission Tomography (PET) scanner with sufficient resolution and sensitivity to visualize neurotransmitter pathways and their disruptions in mental disorders for diagnosis and follow-up treatment. The PET system should be compact and fully compatible with a Magnetic Resonance Imaging (MRI) device in order to allow its operation as a PET brain insert in a hybrid imaging setup with most MRI scanners. The proposed design will enable the currently-installed MRI base to be easily upgraded to PET/MRI systems. The current design for the PET insert consists of a 3-ring configuration with 20 modules per ring and an axial field of view of ~15 cm and a geometrical aperture of ~33 cm in diameter. When coupled to the new head Radio Frequency (RF) coil, the inner usable diameter of the complete PET-RF coil insert is reduced to 26 cm. Two scintillator configurations have been tested, namely a 3-layer staggered array of LYSO with 1.5 mm pixel size, with 35×35 elements (6 mm thickness each) and a black-painted monolithic LYSO block also covering about 50×50 mm{sup 2} active area with 20 mm thickness. Laboratory test results associated with the current MINDView PET module concept are presented in terms of key parameters' optimization, such as spatial and energy resolution, sensitivity and Depth of Interaction (DOI) capability. It was possible to resolve all pixel elements from the three scintillator layers with energy resolutions as good as 10%. The monolithic scintillator showed average detector resolutions varying from 3.5 mm in the entrance layer to better than 1.5 mm near the photosensor, with average energy resolutions of about 17%.

  11. Detector characterization and first coincidence tests of a Compton telescope based on LaBr3 crystals and SiPMs

    International Nuclear Information System (INIS)

    Llosá, G.; Barrio, J.; Cabello, J.; Crespo, A.; Lacasta, C.; Rafecas, M.; Callier, S.; La Taille, C. de; Raux, L.

    2012-01-01

    A Compton telescope for dose monitoring in hadron therapy consisting of several layers of continuous LaBr 3 crystals coupled to silicon photomultiplier (SiPM) arrays is under development within the ENVISION project. In order to test the possibility of employing such detectors for the telescope, a detector head consisting of a continuous 16 mm×18 mm×5 mm LaBr 3 crystal coupled to a SiPM array has been assembled and characterized, employing the SPIROC1 ASIC as readout electronics. The best energy resolution obtained at 511 keV is 6.5% FWHM and the timing resolution is 3.1 ns FWHM. A position determination method for continuous crystals is being tested, with promising results. In addition, the detector has been operated in time coincidence with a second detector layer, to determine the coincidence capabilities of the system. The first tests are satisfactory, and encourage the development of larger detectors that will compose the telescope prototype.

  12. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-10-01

    Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  13. Delivery of siRNA silencing P-gp in peptide-functionalized nanoparticles causes efflux modulation at the blood-brain barrier

    DEFF Research Database (Denmark)

    Gomes, Maria João; Kennedy, Patrick J; Martins, Susana

    2017-01-01

    AIM: Explore the use of transferrin-receptor peptide-functionalized nanoparticles (NPs) targeting blood-brain barrier (BBB) as siRNA carriers to silence P-glycoprotein (P-gp). MATERIALS & METHODS: Permeability experiments were assessed through a developed BBB cell-based model; P-gp mRNA expressio...

  14. Energy-dispersive X-ray fluorescence of discarded tire samples, using a Si-PIN detector

    International Nuclear Information System (INIS)

    Lopes, Fabio; Appoloni, C.R.; Melquiades, Fabio L.

    2007-01-01

    The determination of zinc concentration in samples of discarded tires is of great environmental interest because the process for manufacturing tyres uses S for rubber vulcanization, and ZnO is the reaction catalyst. Discarded tyres are being used in asphalt paving, in the burning process of thermoelectric and cement industries and also for controlling erosion in agricultural areas. Analysis of tyre samples usually requires chemical digestion which is slow and expensive. Aiming to eliminate those limitations, this work uses energy-dispersive X-ray fluorescence (EDXRF) with a portable equipment, once it is a simultaneous multi-element analytical technique, requiring minimal sample preparation. Five samples of discarded tyres have been ground and analysed in the form of pastilles, using a mini X-ray tube (Ag target, MO filter, 25 kV/20 μA) for 200 s, and a Si-PIN semiconductor detector coupled to a multichannel analyser. Zinc concentrations in the range of 40.6 to 44.2 μg g -1 have been obtained, representing 0.4% of the tire composition, which is below the maximum value (2%) recommended by the European Tyre Recycling Association. Concentrations between 0.15 and 0.52 μg g -1 were obtained for Fe

  15. 320 x 256 Complementary Barrier Infrared Detector Focal Plane Array for Long-Wave Infrared Imaging

    Science.gov (United States)

    Nguyen, Jean; Rafol, Sir B.; Soibel, Alexander; Khoskhlagh, Arezou; Ting, David Z.-Y.; Liu, John K.; Mumolo, Jason M.; Gunapala, Sarath D.

    2012-01-01

    A 320 x 256 Complementary Barrier Infrared (CBIRD) focal plane array for long-wavelength infrared (LWIR) imaging is reported. The arrays were grown by molecular beam expitaxy (MBE) with a 300 period 1.9 um thick absorber. The mean dark current density of 2.2 x 10-4 A/cm2 was measured at an operating bias of 128 mV with a long wavelength cutoff of 8.8 ?m observed at 50% of the peak. The maximum quantum efficiency was 54% measured at 5.6 ?m. Operating at T = 80K, the array yielded an 81% fill factor with 97% operability. Good imagery with a mean noise equivalent different temperature (NE?T) of 18.6 mK and a mean detectivity of D* = 1.3 x 1011 cm-Hz1/2/W was achieved. The substrate was thinned using mechanical lapping and neither an AR coating nor a passivation layer was applied. This article provides the details of the fabrication process for achieving low-dark current LWIR CBIRD arrays. Discussion for an effective hard mask for excellent pattern transfer is given and appropriate mounting techniques for good thermal contact during the dry etching process is described. The challenges and differences between etching large 200 ?m test diodes and small 28 ?m FPA pixels are given.

  16. Development of depth encoding small animal PET detectors using dual-ended readout of pixelated scintillator arrays with SiPMs.

    Science.gov (United States)

    Kuang, Zhonghua; Sang, Ziru; Wang, Xiaohui; Fu, Xin; Ren, Ning; Zhang, Xianming; Zheng, Yunfei; Yang, Qian; Hu, Zhanli; Du, Junwei; Liang, Dong; Liu, Xin; Zheng, Hairong; Yang, Yongfeng

    2018-02-01

    The performance of current small animal PET scanners is mainly limited by the detector performance and depth encoding detectors are required to develop PET scanner to simultaneously achieve high spatial resolution and high sensitivity. Among all depth encoding PET detector approaches, dual-ended readout detector has the advantage to achieve the highest depth of interaction (DOI) resolution and spatial resolution. Silicon photomultiplier (SiPM) is believed to be the photodetector of the future for PET detector due to its excellent properties as compared to the traditional photodetectors such as photomultiplier tube (PMT) and avalanche photodiode (APD). The purpose of this work is to develop high resolution depth encoding small animal PET detector using dual-ended readout of finely pixelated scintillator arrays with SiPMs. Four lutetium-yttrium oxyorthosilicate (LYSO) arrays with 11 × 11 crystals and 11.6 × 11.6 × 20 mm 3 outside dimension were made using ESR, Toray and BaSO 4 reflectors. The LYSO arrays were read out with Hamamatsu 4 × 4 SiPM arrays from both ends. The SiPM array has a pixel size of 3 × 3 mm 2 , 0.2 mm gap in between the pixels and a total active area of 12.6 × 12.6 mm 2 . The flood histograms, DOI resolution, energy resolution and timing resolution of the four detector modules were measured and compared. All crystals can be clearly resolved from the measured flood histograms of all four arrays. The BaSO 4 arrays provide the best and the ESR array provides the worst flood histograms. The DOI resolution obtained from the DOI profiles of the individual crystals of the four array is from 2.1 to 2.35 mm for events with E > 350 keV. The DOI ratio variation among crystals is bigger for the BaSO 4 arrays as compared to both the ESR and Toray arrays. The BaSO 4 arrays provide worse detector based DOI resolution. The photopeak amplitude of the Toray array had the maximum change with depth, it provides the worst energy resolution of

  17. Dimensionless parameterization of lidar for laser remote sensing of the atmosphere and its application to systems with SiPM and PMT detectors

    OpenAIRE

    Agishev, Ravil R.; Comerón Tejero, Adolfo; Rodríguez Gómez, Alejandro Antonio; Sicard, Michaël

    2014-01-01

    In this paper, we show a renewed approach to the generalized methodology for atmospheric lidar assessment, which uses the dimensionless parameterization as a core component. It is based on a series of our previous works where the problem of universal parameterization over many lidar technologies were described and analyzed from different points of view. The modernized dimensionless parameterization concept applied to relatively new silicon photomultiplier detectors (SiPMs) and traditional pho...

  18. High Temperature Characteristics of Pt/TaSi2/Pt/W and Pt/Ti/W Diffusion Barrier Systems for Ohmic Contacts to 4H-SiC

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy

    2017-01-01

    The degradation of ohmic contacts to 4H-SiC pressure sensors over time at high temperature is primarily due to two failure mechanisms: migrating bond pad Au and atmospheric O toward the ohmic contact SiC interface and the inter-metallic mixing between diffusion barrier systems (DBS) and the underlying ohmic contact metallization. We investigated the effectiveness of Pt/TaSi2/Pt/W (DBS-A) and Pt/Ti/W (DBS-B) in preventing Au and O diffusion through the underlying binary Ti/W or alloyed W50:Ni50 ohmic contacts to 4H-SiC and the DBS ohmic contact intermixing at temperature up to 700 C.

  19. Electric field strength in a silicon surface barrier detector with the presence of a dielectric plasma column

    International Nuclear Information System (INIS)

    Kanno, Ikuo

    1994-01-01

    The dynamic change of the electric field strength in a silicon surface barrier detector (SSBD) is studied. With the presence of a dielectric plasma column in the depletion layer of the SSBD, the electric field strength inside/outside the plasma column is suppressed/enhanced. As the length and the dielectric constant of the plasma column become shorter and smaller, the suppression and enhancement of the electric field strength become less. The electric field strength recovers the initial state, when the plasma column disappears. When the electrons and holes are inside/outside the dielectric plasma column, they have less/more electric potential than the one they have when there is no plasma column. During the movement of the electron/hole outside the plasma column to the positive/negative electrode, the enhanced electric field strength becomes smaller. Electron and hole pairs, which are the parts of the dielectric plasma column, arrive at positive and negative electrodes, having insufficient electric potential to induce the unit charge. This paper shows that the presence of a dielectric plasma column explains the main part of the residual defect in a SSBD. ((orig.))

  20. Defect analysis in low temperature atomic layer deposited Al{sub 2}O{sub 3} and physical vapor deposited SiO barrier films and combination of both to achieve high quality moisture barriers

    Energy Technology Data Exchange (ETDEWEB)

    Maindron, Tony, E-mail: tony.maindron@cea.fr; Jullien, Tony; André, Agathe [Université Grenoble-Alpes, CEA, LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

    2016-05-15

    Al{sub 2}O{sub 3} [20 nm, atomic layer deposition (ALD)] and SiO films' [25 nm, physical vacuum deposition (PVD)] single barriers as well as hybrid barriers of the Al{sub 2}O{sub 3}/SiO or SiO/Al{sub 2}O{sub 3} have been deposited onto single 100 nm thick tris-(8-hydroxyquinoline) aluminum (AlQ{sub 3}) organic films made onto silicon wafers. The defects in the different barrier layers could be easily observed as nonfluorescent AlQ{sub 3} black spots, under ultraviolet light on the different systems stored into accelerated aging conditions (85 °C/85% RH, ∼2000 h). It has been observed that all devices containing an Al{sub 2}O{sub 3} layer present a lag time τ from which defect densities of the different systems start to increase significantly. This is coherent with the supposed pinhole-free nature of fresh, ALD-deposited, Al{sub 2}O{sub 3} films. For t > τ, the number of defect grows linearly with storage time. For devices with the single Al{sub 2}O{sub 3} barrier layer, τ has been estimated to be 64 h. For t > τ, the defect occurrence rate has been calculated to be 0.268/cm{sup 2}/h. Then, a total failure of fluorescence of the AlQ{sub 3} film appears between 520 and 670 h, indicating that the Al{sub 2}O{sub 3} barrier has been totally degraded by the hot moisture. Interestingly, the device with the hybrid barrier SiO/Al{sub 2}O{sub 3} shows the same characteristics as the device with the single Al{sub 2}O{sub 3} barrier (τ = 59 h; 0.246/cm{sup 2}/h for t > τ), indicating that Al{sub 2}O{sub 3} ALD is the factor that limits the performance of the barrier system when it is directly exposed to moisture condensation. At the end of the storage period (1410 h), the defect density for the system with the hybrid SiO/Al{sub 2}O{sub 3} barrier is 120/cm{sup 2}. The best sequence has been obtained when Al{sub 2}O{sub 3} is passivated by the SiO layer (Al{sub 2}O{sub 3}/SiO). In that case, a large lag time of 795 h and a very

  1. Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

    Science.gov (United States)

    Mahato, Somnath; Puigdollers, Joaquim

    2018-02-01

    Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

  2. Comparative Measurements of the Photon Detection Efficiency of KETEK SiPM Detectors for the LHCb SciFi Upgrade Project

    CERN Document Server

    Joram, Christian

    2014-01-01

    The LHCb SciFi detector is conceived to employ arrays of SiPM detectors to detect scintillation light from ribbons of 2.5 m long scintillating fibres of 250 $\\mu$m diameter. The fibres of type Kuraray SCSF-78 are blue emitting with an emission maximum at 440 nm. However, as a consequence of the radiation damage mainly from charged hadrons in the LHCb experiments, the effective emission spectrum at the end of the fibre will shift to longer wavelengths. A simulation of the light absorption in the fibre, assuming an ionizing dose distribution along the fibre as predicted by the FLUKA code, is able to predict the emission spectrum. Fig. 1 shows the emission spectra (in arbitrary units) for 10 cm intervals along the fibre. At 250 cm, where the ionization dose is expected to reach over the full lifetime of the upgrade LHCb detector about 30 kGy, the average wavelength of emission is approximately 500 nm. The sensitivity spectrum of the SiPM detector should be tuned to match this emission spectrum, i.e. the PDE shou...

  3. Environmental Stability and Oxidation Behavior of HfO2-Si and YbGd(O) Based Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Farmer, Serene; McCue, Terry R.; Harder, Bryan; Hurst, Janet B.

    2017-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, environmental durable environmental barrier coating systems. In this paper, the durability and performance of advanced Electron Beam-Physical Vapor Deposition (EB-PVD) NASA HfO2-Si and YbGdSi(O) EBC bond coat top coat systems for SiCSiC CMC have been summarized. The high temperature thermomechanical creep, fatigue and oxidation resistance have been investigated in the laboratory simulated high-heat-flux environmental test conditions. The advanced NASA EBC systems showed promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

  4. A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

    International Nuclear Information System (INIS)

    Chen, Da Ming; Liang, Zong Cun; Zhuang, Lin; Lin, Yang Huan; Shen, Hui

    2012-01-01

    Highlights: ► a-Si thin films as semitransparent phosphorus diffusion barriers for solar cell. ► a-Si thin films on silicon wafers were patterned by the alkaline solution. ► Selective emitter was formed with patterned a-Si as diffusion barrier for solar cell. -- Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Ω/□ were obtained via POCl 3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

  5. Estimation of power dissipation of a 4H-SiC Schottky barrier diode with a linearly graded doping profile in the drift region

    Directory of Open Access Journals (Sweden)

    Rajneesh Talwar

    2009-09-01

    Full Text Available The aim of this paper is to establish the importance of a linearly graded profile in the drift region of a 4H-SiC Schottky barrier diode (SBD. The power dissipation of the device is found to be considerably lower at any given current density as compared to its value obtained for a uniformly doped drift region. The corresponding values of breakdown voltages obtained are similar to those obtained with uniformly doped wafers of 4H-SiC.

  6. Nanoparticle mediated P-glycoprotein silencing for improved drug delivery across the blood-brain barrier: a siRNA-chitosan approach.

    Directory of Open Access Journals (Sweden)

    Jostein Malmo

    Full Text Available The blood-brain barrier (BBB, composed of tightly organized endothelial cells, limits the availability of drugs to therapeutic targets in the central nervous system. The barrier is maintained by membrane bound efflux pumps efficiently transporting specific xenobiotics back into the blood. The efflux pump P-glycoprotein (P-gp, expressed at high levels in brain endothelial cells, has several drug substrates. Consequently, siRNA mediated silencing of the P-gp gene is one possible strategy how to improve the delivery of drugs to the brain. Herein, we investigated the potential of siRNA-chitosan nanoparticles in silencing P-gp in a BBB model. We show that the transfection of rat brain endothelial cells mediated effective knockdown of P-gp with subsequent decrease in P-gp substrate efflux. This resulted in increased cellular delivery and efficacy of the model drug doxorubicin.

  7. Measurement of the top Yukawa Coupling at a 1 TeV International Linear Collider using the SiD detector

    CERN Document Server

    Roloff, Philipp

    2013-01-01

    One of the detector benchmark processes investigated for the SiD Detailed Baseline Design (DBD) is given by: $e^+ e^- \\to t\\bar{t}H$, where H is the Standard Model Higgs boson of mass 125 GeV. The study is carried out at a centre-of-mass energy of 1 TeV and assuming an integrated luminosity of 1 ab$^{-1}$. The physics aim is a direct measurement of the top Yukawa coupling at the ILC. Higgs boson decays to beauty quark-antiquark pairs are reconstructed. The investigated final states contain eight jets or six jets, one charged lepton and missing energy. Additionally, four of the jets in signal events are caused by beauty quark decays. The analysis is based on a full simulation of the SiD detector using GEANT4. Beam-related backgrounds from $\\gamma\\gamma \\to$ hadrons interactions and incoherent $e^+ e^-$ pairs are considered. This study addresses various aspects of the detector performance: jet clustering in complex hadronic final states, flavour-tagging and the identification of high energy leptons.

  8. Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors

    Science.gov (United States)

    Nidhi, Rajan, Siddharth; Keller, Stacia; Wu, Feng; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

    2008-06-01

    The SiNx/GaN interface barrier height for N-polar GaN based metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) was investigated. N-polar SiNx/GaN/AlGaN/GaN MISHEMT structures with different GaN cap thicknesses were grown by metal-organic chemical vapor deposition. The properties of the SiNx/GaN interface are of critical importance to device operation and modeling in these devices. An analytical expression for the pinch-off voltage of the HEMT was obtained, and capacitance-voltage (C-V) measurements with different Schottky metals were used to extract the barrier height. The Fermi level at the interface was found to be pinned at approximately 1 eV with respect to GaN conduction band edge, irrespective of the work function of the gate metal. Hall measurements of the two-dimensional electron gas density were found to corroborate the predicted interface barrier height. An approximate value for interface charge causing this pinning was calculated to be 4.5×1012 cm-2.

  9. Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

    Energy Technology Data Exchange (ETDEWEB)

    Omotoso, E., E-mail: ezekiel.omotoso@up.ac.za [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Departments of Physics, Obafemi Awolowo University, Ile-Ife 220005 (Nigeria); Meyer, W.E.; Auret, F.D.; Diale, M.; Ngoepe, P.N.M. [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa)

    2016-01-01

    Irradiation experiments have been carried out on 1.9×10{sup 16} cm{sup −3} nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6×10{sup 10} to 9.2×10{sup 11} cm{sup −2}. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation, respectively. As radiation fluence increases, the ideality factors increased from 1.20 to 1.85 but the Schottky barrier height (SBH{sub I–V}) decreased from 1.47 to 1.34 eV. Free carrier concentration, N{sub d} decreased with increasing fluence from 1.7×10{sup 16} to 1.1×10{sup 16} cm{sup −2} at approximately 0.70 μm depth. The reduction in N{sub d} shows that defects were induced during the irradiation and have effect on compensating the free carrier. The free carrier removal rate was estimated to be 6480±70 cm{sup −1}. Alpha-particle irradiation introduced two electron traps (E{sub 0.39} and E{sub 0.62}), with activation energies of 0.39±0.03 eV and 0.62±0.08 eV, respectively. The E{sub 0.39} as attribute related to silicon or carbon vacancy, while the E{sub 0.62} has the attribute of Z{sub 1}/Z{sub 2}.

  10. Heterostructure infrared photovoltaic detectors

    Science.gov (United States)

    Rogalski, Antoni

    2000-08-01

    HgCdTe remains the most important material for infrared (IR) photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, GaAs/AlGaAs multiple quantum wells, InAs/GaInSb strained layer superlattices, high temperature superconductors and especially two types of thermal detectors: pyroelectric detectors and silicon bolometers. It is interesting, however, that none of these competitors can compete in terms of fundamental properties. In addition, HgCdTe exhibits nearly constant lattice parameter which is of extreme importance for new devices based on complex heterostructures. The development of sophisticated controllable vapour phase epitaxial growth methods, such as MBE and MOCVD, has allowed fabrication of almost ideally designed heterojunction photodiodes. In this paper, examples of novel devices based on heterostructures operating in the long wavelength, middle wavelength and short wavelength spectral ranges are presented. Recently, more interest has been focused on p-n junction heterostructures. As infrared technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. HgCdTe heterojunction detectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolour capability in these regions. Recent progress in two-colour HgCdTe detectors is also reviewed.

  11. A high granularity scintillator hadronic — calorimeter with SiPM readout for a linear collider detector

    Czech Academy of Sciences Publication Activity Database

    Andreev, V.; Balagura, V.; Bobchenko, B.; Cvach, Jaroslav; Janata, Milan; Kacl, Ivan; Němeček, Stanislav; Polák, Ivo; Valkár, Š.; Weichert, Jan; Zálešák, Jaroslav

    2005-01-01

    Roč. 540, - (2005), s. 368-380 ISSN 0168-9002 R&D Projects: GA MŠk(CZ) LN00A006 Institutional research plan: CEZ:AV0Z10100502 Keywords : linear collider detector * analog calorimeter * semiconductor detectors * scintillator * high granularity Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.224, year: 2005

  12. Bonding of Si wafers by surface activation method for the development of high efficiency high counting rate radiation detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yamashita, Makoto; Onabe, Hideaki

    2006-01-01

    Si wafers with two different resistivities ranging over two orders of magnitude were bonded by the surface activation method. The resistivities of bonded Si wafers were measured as a function of annealing temperature. Using calculations based on a model, the interface resistivities of bonded Si wafers were estimated as a function of the measured resistivities of bonded Si wafers. With thermal treatment from 500degC to 900degC, all interfaces showed high resistivity, with behavior that was close to that of an insulator. Annealing at 1000degC decreased the interface resistivity and showed close to ideal bonding after thermal treatment at 1100degC. (author)

  13. Electrical properties of Sn/p-Si (MS) Schottky barrier diodes to be exposed to {sup 60}Co {gamma}-ray source

    Energy Technology Data Exchange (ETDEWEB)

    Karatas, S. [Department of Physics, Faculty of Sciences and Arts, University of Kahramanmaras, Suetcue Imam, 46100 Kahramanmaras (Turkey)]. E-mail: skaratas@ksu.edu.tr; Tueruet, A. [Department of Physics, Faculty of Sciences and Arts, Atatuerk University, 25240 Erzurum (Turkey)

    2006-10-15

    In this research, we have investigated the electrical properties of metal-semiconductor (Sn/p-Si) Schottky barrier diodes (SBDs) under {sup 60}Co gamma ({gamma})-rays. These devices is stressed with a zero-bias during {sup 60}Co {gamma} -ray source irradiation with the dose rate 2.12 kGy/h and total dose range was 0-500 kGy at room temperature. Electrical measurements of Sn/p-Si SBDs have been performed using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Experimental results show that gamma-irradiation induces an increase in the barrier height {phi} {sub b}(C-V) obtained from reverse-bias C-V measurements with increasing dose rate. However, the barrier height {phi} {sub b}(I-V) obtained from forward-bias I-V measurements remained almost constant. This negligible change of {phi} {sub b}(I-V) is attributed to the low barrier height in regions associated with the surface termination of dislocations. On the other hand, the values of the ideality factor obtained from I-V measurements increased with increasing dose rate. The results show that the main effect of the radiation is the generation of laterally inhomogeneous defects near the semiconductor surface.

  14. Application of a double-sided silicon-strip detector as a differential pumping barrier for NESR experiments at FAIR

    NARCIS (Netherlands)

    Streicher, B.; Egelhof, P.; Ilieva, S.; Kalantar-Nayestanaki, N.; Kollmus, H.; Kroell, Th; Mutterer, M.; von Schmid, M.; Traeger, M.

    2011-01-01

    The presented work focuses on the development of a differential pumping system using double-sided silicon-strip detectors to separate the ultra-high vacuum of a storage ring from subsequent detectors and outgassing components placed in an auxiliary vacuum. Such a technical concept will give the

  15. SiC-based neutron detector in quasi-realistic working conditions: efficiency and stability at room and high temperature under fast neutron irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Ferone, Raffaello; Issa, Fatima; Ottaviani, Laurent; Biondo, Stephane; Vervisch, Vanessa [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231,13397 Marseille Cedex 20, (France); Szalkai, Dora; Klix, Axel [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344, (Germany); Vermeeren, Ludo [SCK-CEN, Boeretang 200, B-2400 Mol, (Belgium); Saenger, Richard [Schlumberger, Clamart, (France); Lyoussi, Abadallah [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance, (France)

    2015-07-01

    In the framework of the European I SMART project, we have designed and made new SiC-based nuclear radiation detectors able to operate in harsh environments and to detect both fast and thermal neutrons. In this paper, we report experimental results of fast neutron irradiation campaign at high temperature (106 deg. C) in quasi-realistic working conditions. Our device does not suffer from high temperature, and spectra do show strong stability, preserving features. These experiments, as well as others in progress, show the I SMART SiC-based device skills to operate in harsh environments, whereas other materials would strongly suffer from degradation. Work is still demanded to test our device at higher temperatures and to enhance efficiency in order to make our device fully exploitable from an industrial point of view. (authors)

  16. The Development of Environmental Barrier Coating Systems for SiC-SiC Ceramic Matrix Composites: Environment Effects on the Creep and Fatigue Resistance

    Science.gov (United States)

    Zhu, Dongming; Ghosn, Louis J.

    2014-01-01

    Topics covered include: Environmental barrier coating system development: needs, challenges and limitations; Advanced environmental barrier coating systems (EBCs) for CMC airfoils and combustors; NASA EBC systems and material system evolutions, Current turbine and combustor EBC coating emphases, Advanced development, processing, testing and modeling, EBC and EBC bond coats: recent advances; Design tool and life prediction of coated CMC components; Advanced CMC-EBC rig demonstrations; Summary and future directions.

  17. Dose Rate Linearity in 4H-SiC Schottky Diode-Based Detectors at Elevated Temperatures

    Science.gov (United States)

    Mohamed, N. S.; Wright, N. G.; Horsfall, A. B.

    2017-07-01

    The outstanding material properties make silicon carbide radiation hard and this ability has enabled it to be demonstrated in a range of detector structures for deployment in extreme environments, including those where the ability to tolerate high radiation dose is imperative. This includes applications in space and nuclear environments, where the ability to detect highly energetic radiation is important. In contrast, detectors used in medical treatment, such as imaging and radiotherapy, use a range of radiation dose rates and energies for both particulate and photonic radiation. Here, we report the response and dose rate linearity of detectors fabricated from silicon carbide to dose rates in the range of 0.185 mGy · min-1, typical of those used for medical imaging. The data show that the radiation detected current originates within the depletion region of the detector and that the response is linearly dependent on the volume of the space charge region. The realization of a vertical detector structure, coupled with the high quality of epitaxial layers, has resulted in a high dose sensitivity of the detector that is highly linear. The temperature dependence of the characteristics indicates that silicon carbide Schottky diode-based detectors offer a performance suitable for medical applications at temperatures below 100 °C without the need for external cooling.

  18. SiPM photosensors and fast timing readout for the Barrel Time-of-Flight detector in bar PANDA

    Science.gov (United States)

    Suzuki, K.

    2018-03-01

    The Barrel Time-of-Flight detector system will be installed in the upcoming bar PANDA experiment at FAIR in Germany. The detector has a barrel shape of phi=0.5 m and 1.8 m long, covering about 5 m2, which corresponds to the laboratory polar angle coverage of 22oPANDA Barrel Time-of-Flight detector are presented. The test shows that the current design fulfils satisfactorily the required timing performance (σt~ 56 ps) and the timing performance depends little on the hit position on the surface.

  19. Impact of metal overhang and guard ring techniques on breakdown voltage of Si strip sensors - 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

    CERN Document Server

    Ranjan, K; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The importance of Si sensors in high-energy physics (HEP) experiments can hardly be overemphasized. However, the high luminosity and the high radiation level in the future HEP experiments, like Large Hadron Collider (LHC), has posed a serious challenge to the fabrication of Si detectors. For the safe operation over the full LHC lifetime, detectors are required to sustain very high voltage operation, well exceeding the bias voltage needed to full deplete the heavily irradiated Si sensors. Thus, the main effort in the development of Si sensors is concentrated on a design that avoids p-n junction breakdown at operational biases. Among various proposed techniques, Field-limiting Ring (FLR) (or guard ring) and Metal-Overhang (MO) are technologically simple and are suitable for vertical devices. Since high-voltage planar Si junctions are of great importance in the HEP experiments, it is very interesting to compare these two aforementioned techniques for achieving the maximum breakdown voltage under optimal conditio...

  20. Infrared detectors and focal plane arrays II; Proceedings of the Meeting, Orlando, FL, Apr. 23, 24, 1992

    Science.gov (United States)

    Dereniak, Eustace L.; Sampson, Robert E.

    The present conference discusses Schottky-barrier IR image sensors, SWIR and MWIR Schottky-barrier imagers, a 640 x 640 PtSi, models of nonlinearities in focal plane arrays, retinal function relative to IRT focal plane arrays, a solid-state pyroelectric imager, and electrolyte electroreflectance spectroscopies for the ion-implanted HgCdTe with thermal annealing. Also discussed are HgCdTe hybrid focal plane arrays for thermoelectrically cooled applications, a novel IR detector plasma-edge detector, and IR detector circuits using monolithic CMOS amps with InSb detectors. (No individual items are abstracted in this volume)

  1. Tailoring Lipid and Polymeric Nanoparticles as siRNA Carriers towards the Blood-Brain Barrier - from Targeting to Safe Administration.

    Science.gov (United States)

    Gomes, Maria João; Fernandes, Carlos; Martins, Susana; Borges, Fernanda; Sarmento, Bruno

    2017-03-01

    Blood-brain barrier is a tightly packed layer of endothelial cells surrounding the brain that acts as the main obstacle for drugs enter the central nervous system (CNS), due to its unique features, as tight junctions and drug efflux systems. Therefore, since the incidence of CNS disorders is increasing worldwide, medical therapeutics need to be improved. Consequently, aiming to surpass blood-brain barrier and overcome CNS disabilities, silencing P-glycoprotein as a drug efflux transporter at brain endothelial cells through siRNA is considered a promising approach. For siRNA enzymatic protection and efficient delivery to its target, two different nanoparticles platforms, solid lipid (SLN) and poly-lactic-co-glycolic (PLGA) nanoparticles were used in this study. Polymeric PLGA nanoparticles were around 115 nm in size and had 50 % of siRNA association efficiency, while SLN presented 150 nm and association efficiency close to 52 %. Their surface was functionalized with a peptide-binding transferrin receptor, in a site-oriented manner confirmed by NMR, and their targeting ability against human brain endothelial cells was successfully demonstrated by fluorescence microscopy and flow cytometry. The interaction of modified nanoparticles with brain endothelial cells increased 3-fold compared to non-modified lipid nanoparticles, and 4-fold compared to non-modified PLGA nanoparticles, respectively. These nanosystems, which were also demonstrated to be safe for human brain endothelial cells, without significant cytotoxicity, bring a new hopeful breath to the future of brain diseases therapies.

  2. Simulation of thermal stresses in SiC-Al2O3 composite tritium penetration barrier by finite-element analysis

    International Nuclear Information System (INIS)

    Liu, Hongbing; Tao, Jie; Gautreau, Yoann; Zhang, Pingze; Xu, Jiang

    2009-01-01

    Tritium penetration barrier (TPB) composed of Al 2 O 3 and SiC on 316L stainless steel was proposed to improve the tritium penetration resistance of the substrate in this work. At the same time, the concept of functionally graded materials (FGM) was applied to manage to decrease residual stresses between Al 2 O 3 and 316L stainless steel substrate due to the mismatch of their thermal expansion coefficients. The effects of system architecture on the residual stresses developed in the composite coatings were investigated numerically by means of finite-element analysis (FEA). Modeling results showed that the presence of the graded properties and the compositions within the coating did reduce the stress discontinuity at the interfaces between the coating and the substrate. Also, the magnitudes of the residual stresses on the coating surface and at the coating/substrate interface were dependent on the Al 2 O 3 and SiC coating thickness.

  3. Lu2O3-SiO2-ZrO2 Coatings for Environmental Barrier Application by Solution Precursor Plasma Spraying and Influence of Precursor Chemistry

    Science.gov (United States)

    Darthout, Émilien; Quet, Aurélie; Braidy, Nadi; Gitzhofer, François

    2014-02-01

    As environmental barrier coatings are subjected to thermal stress in gas turbine engines, the introduction of a secondary phase as zircon (ZrSiO4) is likely to increase the stress resistance of Lu2Si2O7 coatings generated by induction plasma spraying using liquid precursors. In a first step, precursor chemistry effect is investigated by the synthesis of ZrO2-SiO2 nanopowders by induction plasma nanopowder synthesis technique. Tetraethyl orthosilicate (TEOS) as silicon precursor and zirconium oxynitrate and zirconium ethoxide as zirconium precursors are mixed in ethanol and produce a mixture of tetragonal zirconia and amorphous silica nanoparticles. The use of zirconium ethoxide precursor results in zirconia particles with diameter below 50 nm because of exothermic thermal decomposition of the ethoxide and its high boiling point with respect to solvent, while larger particles are formed when zirconium oxynitrate is employed. The formation temperature of zircon from zirconia and silica oxides is found at 1425 °C. Second, coatings are synthesized in Lu2O3-ZrO2-SiO2 system. After heat treatment, the doping effect of lutetium on zirconia grains totally inhibits the zircon formation. Dense coatings are obtained with the use of zirconium ethoxide because denser particles with a homogeneous diameter distribution constitute the coating.

  4. Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact

    Science.gov (United States)

    Yang, Yang; Wu, Zhenhua; Yang, Wen; Li, Jun; Chen, Songyan; Li, Cheng

    2017-06-01

    We theoretically investigate the spin injection in different ferromagnet/insulator/n-Si tunnel contacts by using the lattice non-equilibrium Green’s function method. We find that the tunnel contacts with low-barrier materials such as TiO2 and Ta2O5 have far lower resistances than the conventional-barrier materials, resulting in a wider and attainable optimum parameters window for improving the spin-injection efficiency and magnetoresistance ratio of a vertical-spin metal-oxide-semiconductor field-effect transistor. Additionally, we find that the spin-asymmetry coefficient of the TiO2 tunnel contact has a negative value, while that of the Ta2O5 contact can be tuned between positive and negative values by changing the parameters.

  5. Fischer-Tropsch Performance of an SiO2-Supported Co-Based Catalyst Prepared by Hydrogen Dielectric-Barrier Discharge Plasma

    International Nuclear Information System (INIS)

    Fu Tingjun; Huang Chengdu; Lv Jing; Li Zhenhua

    2014-01-01

    A silica-supported cobalt catalyst was prepared by hydrogen dielectric-barrier discharge (H 2 -DBD) plasma. Compared to thermal hydrogen reduction, H 2 -DBD plasma treatment can not only fully decompose the cobalt precursor but also partially reduce the cobalt oxides at lower temperature and with less time. The effect of the discharge atmosphere on the property of the plasma-prepared catalyst and the Fischer-Tropsch synthesis activity was studied. The results indicate that H 2 -DBD plasma treatment is a promising alternative for preparing Co/SiO 2 catalysts from the viewpoint of energy savings and efficiency

  6. Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990

    Science.gov (United States)

    Dereniak, Eustace L.; Sampson, Robert E.

    1990-09-01

    The papers contained in this volume provide an overview of recent advances and the current state of developments in the field of infrared detectors and focal plane arrays. Topics discussed include nickel silicide Schottky-barrier detectors for short-wavelength infrared applications; high performance PtSi linear and focal plane arrays; and multispectral band Schottky-barrier IRSSD for remote-sensing applications. Papers are also presented on the performance of an Insi hybrid focal array; characterization of IR focal plane test stations; GaAs CCD readout for engineered bandgap detectors; and fire detection system for aircraft cargo bays.

  7. Development and simulation of a Ge/Si multi-detector spectrometer for fission products traces detection in the environment

    International Nuclear Information System (INIS)

    Cagniant, Antoine

    2015-01-01

    For the verification of the Comprehensive nuclear Test Ban Treaty (CTBT), the measurement of fission products trace levels in the environment is fundamental. Such measurement is a key indicator of a nuclear explosion. For constant amelioration of these measurements, the CEA/DAM-Ile de France has developed and installed a new dedicated surface spectrometer. Named GAMMA3, it is equipped with three germanium detectors, two silicon detectors (integrated in a dedicated gas cell, the PIPSBox) and includes an optimized shielding.This shielding reduces greatly the interference of environmental photons, muons and neutrons with the detectors. The residual radiological background measured inside the shielding is the community's lowest for a surface laboratory. This set of high energy resolution detectors allows the operator to optimize a measurement according to the sample geometry, activity or nature. More precisely, a radioactive noble gas can be measured by photon/electron coincidence, an active sample can be measured by photon/photon coincidence, and a low-active sample can be measured in a high-efficiency configuration. Combining optimized shielding and optimized measurement, Minimum Detectable Activities required for CTBT certification are obtained quickly. Specifically, MDA is reached in 5 hours for 140-Ba (24 mBq), in 6h30 hours for 131m/133m-Xe (5 mBq) and in 7h15 for 133-Xe (5 mBq), when CTBT requirement is in 6 days. (author) [fr

  8. Gate-controlled diodes for characterization of the Si-SiO sub 2 interface with respect to surface effects of silicon detectors

    CERN Document Server

    Becker, C; Lichau, C; Wuebben, T; Wüstenfeld, J; Wunstorf, R

    2000-01-01

    In future high-energy physics experiments silicon detectors with a high spatial resolution will be used for tracking close to the interaction point. Besides crystal damage, the surface damage caused by ionizing irradiation is very important for the long-term performance of these devices. Therefore, systematic characterization of surface effects is necessary. For these investigations we designed a test field consistent of MOS structures and gate-controlled diodes to be produced with different vendors. A new gate-controlled diode with different current and capacitance measurement options will be introduced and first results of parameters evaluated on the unirradiated device as well as after irradiation with low energetic electrons, neutrons and charged hadrons will be presented. The gate-controlled diode with new features has been shown to be a powerful tool to investigate the oxide and interface quality before and after irradiation.

  9. Space charge sign inversion and electric field reconstruction in 24 GeV/c proton-irradiated MCZ Si p+-n(TD)-n+ detectors processed via thermal donor introduction

    International Nuclear Information System (INIS)

    Li, Z.; Verbitskaya, E.; Carini, G.; Chen, W.; Eremin, V.; Gul, R.; Haerkoenen, J.; Li, M.

    2009-01-01

    The aim of this study is the evaluation of radiation effects in detectors based on p-type magnetic czochralski (MCZ) Si that was converted to n-type by thermal donor (TD) introduction. As-processed p + -p-n + detectors were annealed at 430 deg. C resulting in p + -n(TD)-n + structures. The space charge sign and the electric field distribution E(x) in MCz Si p + -n(TD)-n + detectors irradiated by 24 GeV/c protons were analyzed using the data on the current pulse response and the Double Peak (DP) electric field distribution model for heavily irradiated detectors. The approach considers an irradiated detector as a structure with three regions in which the electric field depends on the coordinate, and the induced current pulse response arises from the drift process of free carriers in the detector with variable electric field. Reconstruction of the E(x) profile from the pulse response shapes is performed employing a new method for DP electric field reconstruction. This method includes: (a) a direct extraction of charge loss due to trapping and (b) the fitting of a simulated pulse response to the 'corrected' pulse by adjusting the electric field profiles in the three regions. Reconstruction of E(x) distribution showed that in the diodes irradiated by a proton fluence of (2-4)x10 14 p/cm 2 space charge sign inversion has occurred. This is the evidence that the influence of 24 GeV/c proton radiation on MCz Si p + -n(TD)-n + detectors is similar to that on p + -n-n + detectors based on FZ or diffusion oxygenated n-type Si.

  10. Next decade in infrared detectors

    Science.gov (United States)

    Rogalski, A.

    2017-10-01

    Fundamental and technological issues associated with the development and exploitation of the most advanced infrared technologies is discussed. In these classes of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys, type II superlattices (T2SLs), barrier detectors, quantum wells, extrinsic detectors, and uncooled thermal bolometers. The sophisticated physics associated with the antimonide-based bandgap engineering will give a new impact and interest in development of infrared detector structures. Important advantage of T2SLs is the high quality, high uniformity and stable nature of the material. In general, III-V semiconductors are more robust than their II-VI counterparts due to stronger, less ionic chemical bonding. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability - the so-called "ibility" advantages. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. The microbolometer detectors are now produced in larger volumes than all other IR array technologies together. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VOx) or amorphous silicon (a-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement.

  11. Highly conformal SiO2/Al2O3 nanolaminate gas-diffusion barriers for large-area flexible electronics applications

    International Nuclear Information System (INIS)

    Choi, Jin-Hwan; Kim, Young-Min; Park, Young-Wook; Park, Tae-Hyun; Jeong, Jin-Wook; Choi, Hyun-Ju; Song, Eun-Ho; Ju, Byeong-Kwon; Lee, Jin-Woo; Kim, Cheol-Ho

    2010-01-01

    The present study demonstrates a flexible gas-diffusion barrier film, containing an SiO 2 /Al 2 O 3 nanolaminate on a plastic substrate. Highly uniform and conformal coatings can be made by alternating the exposure of a flexible polyethersulfone surface to vapors of SiO 2 and Al 2 O 3 , at nanoscale thickness cycles via RF-magnetron sputtering deposition. The calcium degradation test indicates that 24 cycles of a 10/10 nm inorganic bilayer, top-coated by UV-cured resin, greatly enhance the barrier performance, with a permeation rate of 3.79 x 10 -5 g m -2 day -1 based on the change in the ohmic behavior of the calcium sensor at 20 deg. C and 50% relative humidity. Also, the permeation rate for 30 cycles of an 8/8 nm inorganic bilayer coated with UV resin was beyond the limited measurable range of the Ca test at 60 deg. C and 95% relative humidity. It has been found that such laminate films can effectively suppress the void defects of a single inorganic layer, and are significantly less sensitive against moisture permeation. This nanostructure, fabricated by an RF-sputtering process at room temperature, is verified as being useful for highly water-sensitive organic electronics fabricated on plastic substrates.

  12. Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

    Directory of Open Access Journals (Sweden)

    Chien-Yu Li

    2018-01-01

    Full Text Available In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V, a low reverse leakage current density (≤72 μA/mm2@100 V, and a Schottky barrier height of 1.074 eV.

  13. Effect of SiNx diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol–gel dip coating and reactive magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Mohamed Nawfal Ghazzal

    2015-10-01

    Full Text Available We investigate the effect of the thickness of the silicon nitride (SiNx diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol–gel and physical methods (reactive sputtering are affected differentially by the intercalating SiNx diffusion barrier. Increasing the thickness of the SiNx diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol–gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiNx barrier diffusion. The SiNx barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed.

  14. Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor

    International Nuclear Information System (INIS)

    Zhang Xianjun; Yang Yintang; Chai Changchun; Duan Baoxing; Song Kun; Chen Bin

    2012-01-01

    A lower doped layer is inserted between the gate and channel layer and its effect on the performance of a 4H-SiC Schottky barrier field-effect transistor (MESFET) is investigated. The dependences of the drain current and small signal parameters on this inserted gate-buffer layer are obtained by solving one-dimensional (1-D) and two-dimensional (2-D) Poisson's equations. The drain current and small signal parameters of the 4H-SiC MESFET with a gate-buffer layer thickness of 0.15 μm are calculated and the breakdown characteristics are simulated. The results show that the current is increased by increasing the thickness of the gate-buffer layer; the breakdown voltage is 160 V, compared with 125 V for the conventional 4H-SiC MESFET; the cutoff frequency is 27 GHz, which is higher than 20 GHz of the conventional structure due to the lower doped gate-buffer layer. (semiconductor devices)

  15. Recrystallization effects of swift heavy {sup 209}Bi ions irradiation on electrical degradation in 4H-SiC Schottky barrier diode

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Zhimei; Ma, Yao; Gong, Min [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Li, Yun [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Huang, Mingmin [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Gao, Bo [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Zhao, Xin, E-mail: zhaoxin1234@scu.edu.cn [Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2017-06-15

    In this paper, the phenomenon that the recrystallization effects of swift heavy {sup 209}Bi ions irradiation can partially recovery damage with more than 1 × 10{sup 10} ions/cm{sup 2} is investigated by the degradation of the electrical characteristics of 4H-SiC Schottky barrier diode (SBD) with swift heavy ion irradiation. Deep level transient spectroscopy (DLTS) and Current-Voltage (I-V) measurements clearly indicated that E{sub 0.62} defect induced by swift heavy ion irradiation, which was a recombination center, could result in the increase of reverse leakage current (I{sub R}) at fluence less than 1 × 10{sup 9} ions/cm{sup 2} and the recovery of I{sub R} at fluence more than 1 × 10{sup 10} ions/cm{sup 2} in 4H-SiC SBD. The variation tendency of I{sub R} is consisted with the change of E{sub 0.62} defect. Furthermore, it is reasonable explanation that the damage or defect formed at low fluence in SiC may be recovered by further swift heavy ion irradiation with high fluence, which is due to the melting with the ion tracks of the amorphous zones through a thermal spike and subsequent epitaxial recrystallization initiated from the neighboring crystalline regions.

  16. Thin surface layers of SiO2 obtained from tetraethoxysilane (TEOS) in electric discharges stabilized by a dielectric barrier

    International Nuclear Information System (INIS)

    Schmidt-Szalowski, K.; Fabianowski, W.; Rzanek-Boroch, Z.; Gutkowski, R.

    1998-01-01

    The reported research was devoted to the process of thin layer deposition in a discharge at atmospheric pressure stabilized by a dielectric barrier. Thin surface layers composed mainly of silicon dioxide were produced by polycondensation of tetraethoxysilane vapor in mixtures with helium gas with a small amount of oxygen. The influence was studied of the voltage applied and of the time elapsed in the deposition process, on the thickness of the layer, as were the changes of composition of the deposited layers during and after storage. It is shown that good passivating pinhole-free silicon oxide layers can be produced in surface barrier discharges. (J.U.)

  17. Dimensionless parameterization of lidar for laser remote sensing of the atmosphere and its application to systems with SiPM and PMT detectors.

    Science.gov (United States)

    Agishev, Ravil; Comerón, Adolfo; Rodriguez, Alejandro; Sicard, Michaël

    2014-05-20

    In this paper, we show a renewed approach to the generalized methodology for atmospheric lidar assessment, which uses the dimensionless parameterization as a core component. It is based on a series of our previous works where the problem of universal parameterization over many lidar technologies were described and analyzed from different points of view. The modernized dimensionless parameterization concept applied to relatively new silicon photomultiplier detectors (SiPMs) and traditional photomultiplier (PMT) detectors for remote-sensing instruments allowed predicting the lidar receiver performance with sky background available. The renewed approach can be widely used to evaluate a broad range of lidar system capabilities for a variety of lidar remote-sensing applications as well as to serve as a basis for selection of appropriate lidar system parameters for a specific application. Such a modernized methodology provides a generalized, uniform, and objective approach for evaluation of a broad range of lidar types and systems (aerosol, Raman, DIAL) operating on different targets (backscatter or topographic) and under intense sky background conditions. It can be used within the lidar community to compare different lidar instruments.

  18. Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

    Science.gov (United States)

    Saadaoui, Salah; Mongi Ben Salem, Mohamed; Gassoumi, Malek; Maaref, Hassen; Gaquière, Christophe

    2011-07-01

    In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques, such as gate current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements have been used to characterize the diode. The behavior study of the series resistance, RS, the ideality factor, n, the effective barrier height, Φb, and the leakage current with the temperature have emphasized an inhomogeneity of the barrier height and a tunneling mechanism assisted by traps in the SBD. Hence, C-V measurements successively sweeping up and down the voltage have demonstrate a hysteresis phenomenon which is more pronounced in the temperature range of 240 to 320 K, with a maximum at ˜300 K. This parasitic effect can be attributed to the presence of traps activated at the same range of temperature in the SBD. Using the DLTS technique, we have detected one hole trap having an activation energy and a capture cross-section of 0.75 eV and 1.09 × 10-13cm2, respectively, seems to be responsible for the appearance of the hysteresis phenomenon.

  19. Manufacture and study of very high purity P-type Silicium nuclear detectors

    International Nuclear Information System (INIS)

    Rahab, H.

    1986-04-01

    The purpose of this study is the realization of P-type silicon detectors of very high resistivity. The well-known process of Li ion drifting compensates for the acceptor impurities in the P-type Si of low resistivity used for the manufacturing of Si(Li) detector becomes useless. The last (Si(Li)) present a problem of utilization and storage at low temperature. The obtainment of silicon monocrystals having a resistivity reaching 130.000 Ω cm allows to use them directly in detection of nuclear radiations without compensating them with lithium. In order to familiarise with the techniques of detectors manufacturing in general, we have realized Si(Li) detectors. Afterwards we began the research itself by a study and realization of a great number and different types of detectors from P-type silicon having a resistivity varying from 40.000 to 100.000 Ω cm. The surface barrier detectors (SBD) elaborated after an investigation of different chemical treatments present electrical characteristics and dead layer better than Si(Li) detectors at time t=0. However they present a stability problem. A more profound investigation has to be undertaken in the future to improve the contacts and the surface treatment which are the principal causes of this instability. PIN type detectors made by implantation technique gave way to very promising results in nuclear detection. The resolutions which are obtained on the peaks of energy above 20 KeV, are much comparable to those obtained with the Si(Li) detectors. (For example, we have obtained a resolution of 540 eV on the peak of 59,6 KeV for 241 Am with a high purity Si(p) detector implanted B-AS). However to be used in the low energies field (20 KeV) it is necessary to diminish the dead layer. For this purpose, and implantation at lower energies than those used must be envisaged

  20. High performance SiC detectors for MeV ion beamsgenerated by intense pulsed laser plasmas

    Czech Academy of Sciences Publication Activity Database

    Cutroneo, M.; Musumeci, P.; Zimbone, M.; Torrisi, L.; La Via, F.; Margarone, Daniele; Velyhan, Andriy; Ullschmied, Jiří; Calcagno, L.

    2013-01-01

    Roč. 28, č. 1 (2013), s. 87-93 ISSN 0884-2914 R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE.2.3.20.0087 Grant - others:ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; OP VK 2 LaserGen(XE) CZ.1.07/2.3.00/20.0087 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : silicon carbide * ion detectors * high power laser Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.815, year: 2013

  1. Atomic layer deposition α-Al2O3 diffusion barriers to eliminate the memory effect in beta-gamma radioxenon detectors

    International Nuclear Information System (INIS)

    Warburton, W.K.; Wolfgang Hennig; Bertrand, J.A.; George, S.M.; Steven Biegalski

    2013-01-01

    Well designed scintillator detectors, including such examples as ARSA, SAUNA, and XIA's 'PhosWatch', can readily achieve the state of the art radioxenon detection limits required for nuclear explosion monitoring. They are also reliable, robust detectors that do not require cryogenic cooling for operation. All three employ the principle of beta-gamma coincidence detection to reduce background counting rates, using a BC-404 plastic scintillator to detect the betas and a CsI or NaI scintillator to detect the gamma-rays. As a consequence of this commonality of design, all three also display a 'memory effect' arising from the diffusion of Xe into BC-404. Thus, when one sample is pumped out of the detector, a fraction remains behind, embedded in the BC-404, where it artificially raises the signal counting rate for the next sample. While this is not a fatal flaw in scintillator detectors, developing a method to eliminate the memory effect would significantly enhance their utility. This paper reports efforts to develop thin, amorphous Al 2 O 3 films, deposited by atomic layer deposition (ALD) to act as diffusion barriers on the BC-404 surfaces exposed to radioxenon. Using radon as a convenient substitute for Xe, film thicknesses between 2 and 10 nm were originally investigated and found to show a memory effect to varying degrees. A second set of 20 and 30 nm films was then produced, which appeared to completely eliminate the radon memory effect, but, when consequentially tested with radioxenon, were found to exhibit xenon memory effects that were approximately half of the effect found on uncoated BC-404. We draw two conclusions from this result. The first is that it will be necessary to develop an improved method for depositing thicker ALD Al 2 O 3 films at lower temperatures while still retaining high film quality. The second is that, since xenon is required to test for the xenon memory effect, we need a test method that does not require xenon radio-isotopes in order to

  2. Binding Energy and Dissociation Barrier: Experimental Determination of the Key Parameters of the Potential Energy Curve of Diethyl Ether on Si(001).

    Science.gov (United States)

    Reutzel, Marcel; Lipponer, Marcus; Dürr, Michael; Höfer, Ulrich

    2015-10-01

    The key parameters of the potential energy curve of organic molecules on semiconductor surfaces, binding energy of the intermediate state and dissociation barrier, were experimentally investigated for the model system of diethyl ether (Et2O) on Si(001). Et2O adsorbs via a datively bonded intermediate from which it converts via ether cleavage into a covalently attached final state. This thermally activated conversion into the final state was followed in real-time by means of optical second-harmonic generation (SHG) at different temperatures and the associated energy barrier ϵa = 0.38 ± 0.05 eV and pre-exponential factor νa = 10(4±1) s(-1) were determined. From molecular beam experiments on the initial sticking probability, the difference between the desorption energy ϵd and ϵa was extracted and thus the binding energy of the intermediate state was determined (0.62 ± 0.08 eV). The results are discussed in terms of general chemical trends as well as with respect to a wider applicability on adsorbate reactions on semiconductor surfaces.

  3. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  4. Characterization by optical and magnetic spectroscopy of a synthesized SiO2 thin film used for radiation detector

    Science.gov (United States)

    Abdelaziz, T. D.; Ezz-Eldin, F. M.

    2017-09-01

    This work reports the synthesis and characterization of silica glass prepared by sol-gel procedure and finds out the effects of doses of gamma irradiation on the steps route of the heat-treated sample at 600 and 1100 °C. Combined characterizations of the glassy samples have been carried out by optical absorption and electron paramagnetic resonance. Also, FT infrared absorption spectra have been measured for both the heat-treated samples before and after gamma irradiation. Optical absorption spectra have identified an absorption band at 212-215 nm beside a broad band at 230-265 nm and the correlation of E' center with heat-treatment and gamma irradiation have been followed. FT infrared absorption spectra indicate the bands within near IR region representing the vibrational modes due to water, OH and SiOH within the wavenumber range 2500-3700 cm-1 are affected by heat treatment due to the elimination of organic residue and amount of OH and water. ESR investigations confirm the results obtained from optical and FTIR measurements. It is concluded from the collective data that sol-gel silica glass can serve as acceptable candidate for gamma-rays irradiator and gamma chamber dosimetry.

  5. Detectors - Electronics

    International Nuclear Information System (INIS)

    Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J.

    1998-01-01

    The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X → e - converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the 3 He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

  6. MUST detector

    International Nuclear Information System (INIS)

    Blumenfeld, Y.; Auger, F.; Sauvestre, J.E.

    1999-01-01

    The IPN-Orsay, in collaboration with the SPhN-Saclay and the DPTA Bruyeres, has built an array of 8 telescopes based on Si-strip technology for the study of direct reactions induced by radioactive beams. The detectors are described, along with the compact high density VXI electronics and the stand-alone data acquisition system developed in the laboratory. One telescope was tested using an 40 Ar beam and the measured performances are discussed. (authors)

  7. Investigation of enzyme-sensitive lipid nanoparticles for delivery of siRNA to blood–brain barrier and glioma cells

    Directory of Open Access Journals (Sweden)

    Bruun J

    2015-09-01

    Full Text Available Jonas Bruun,1 Trine B Larsen,1 Rasmus I Jølck,1 Rasmus Eliasen,1 René Holm,2 Torben Gjetting,1 Thomas L Andresen11Department of Micro- and Nanotechnology, Center for Nanomedicine and Theranostics, Technical University of Denmark, DTU Nanotech, Lyngby, Denmark; 2H Lundbeck A/S, Biologics and Pharmaceutical Science, Valby, DenmarkAbstract: Clinical applications of siRNA for treating disorders in the central nervous system require development of systemic stable, safe, and effective delivery vehicles that are able to cross the impermeable blood–brain barrier (BBB. Engineering nanocarriers with low cellular interaction during systemic circulation, but with high uptake in targeted cells, is a great challenge and is further complicated by the BBB. As a first step in obtaining such a delivery system, this study aims at designing a lipid nanoparticle (LNP able to efficiently encapsulate siRNA by a combination of titratable cationic lipids. The targeted delivery is obtained through the design of a two-stage system where the first step is conjugation of angiopep to the surface of the LNP for targeting the low-density lipoprotein receptor-related protein-1 expressed on the BBB. Second, the positively charged LNPs are masked with a negatively charged PEGylated (poly(ethylene glycol cleavable lipopeptide, which contains a recognition sequence for matrix metalloproteinases (MMPs, a class of enzymes often expressed in the tumor microenvironment and inflammatory BBB conditions. Proteolytic cleavage induces PEG release, including the release of four glutamic acid residues, providing a charge switch that triggers a shift of the LNP charge from weakly negative to positive, thus favoring cellular endocytosis and release of siRNA for high silencing efficiency. This work describes the development of this two-stage nanocarrier-system and evaluates the performance in brain endothelial and glioblastoma cells with respect to uptake and gene silencing efficiency. The

  8. High Temperature Degradation of Advanced Thermal and Environmental Barrier Coatings (TEBCs) by CaO-MgO-Al2O3-SiO2 (CMAS)

    Science.gov (United States)

    Costa, Gustavo; Zhu, Dongming

    2017-01-01

    There is increasing interest in the degradation studies of thermal and environmental barrier coatings (TEBCs) of gas turbines by molten CaO-MgO-Al2O3-SiO2 (CMAS). CMAS minerals are usually referred as silica-containing sand dust and volcano ash materials that are carried by the intake air into gas turbines, e.g. aircraft engines. The low-melting deposits react at high temperatures (1000C) with the coating materials. This causes degradation and accelerated coating failure of the static and rotating components of the turbine engines. We discuss some preliminary results of the reactions between CMAS and Rare-Earth (RE Y, Yb, Dy, Gd, Nd and Sm) oxide stabilized ZrO2 or HfO2 systems, and the stability of the resulting oxides and silicates. Plasma sprayed hollow tube samples (outer diameter 4.7 mm, wall thickness 0.76 mm and 26 mm height) were half filled with CMAS powder, wrapped and sealed with platinum foil, and heat- treated at 1310 C for 5h. Samples were characterized by differential scanning calorimetry, X-ray diffraction and cross section electron microscopy analysis.

  9. 2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

    Science.gov (United States)

    Ma, Jun; Matioli, Elison

    2018-01-01

    This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (VSCH), despite a large applied reverse bias, fixing the reverse leakage current (IR) of the SBD. Such architecture led to an ultra-low IR of 51 ± 5.9 nA/mm at -1000 V, in addition to a small turn-on voltage (VON) of 0.61 ± 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (VBR) of -2000 V at 1 μA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the IR and increases the VBR without sacrificing the VON, which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.

  10. SiD Letter of Intent

    CERN Document Server

    Aihara, H.; Oreglia, M.; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; Grefe, C.; Klempt, W.; Linssen, L.; Schlatter, D.; Speckmayer, P.; Thom, J.; Yang, J.; Christian, D.C.; Cihangir, S.; Cooper, W.E.; Demarteau, M.; Fisk, H.E.; Garren, L.A.; Krempetz, K.; Kutschke, R.K.; Lipton, R.; Para, A.; Tschirhart, R.; Wenzel, H.; Yarema, R.; Grunewald, M.; Pankov, A.; U., Gomel State Tech.; Dutta, T.; Dauncey, P.D.; Balbuena, J.P.; Fleta, C.; Lozano, M.; Ullan, M.; Christian, G.B.; Faus-Golfe, A.; Fuster, J.; Lacasta, C.; Marinnas, C.; Vos, M.; Duarte, J.; Fernandez, M.; Gonzalez, J.; Jaramillo, R.; Lopez, Virto A.; Martinez-Eivero, C.; Moya, D.; Ruiz-Mimeno, A.; Vila, I.; Colledani, C.; Dorokhov, A.; Hu-Guo, C.; Winter, M.; Moortgat-Pick, G.; Onoprienko, D.V.; Kim, G.N.; Park, H.; Adloff, C.; Blaha, J.; Blaising, J.-J.; Cap, S.; Chefdeville, M.; Drancourt, C.; Espargiliare, A.; Gaglione, R.; Geffroy, N.; Jacquemier, J.; Karyotakis, Y.; Prast, J.; Vouters, G.; Gronberg, J.; Walston, S.; Wright, D.; Sawyer, L.; Laloum, M.; Ciobanu, C.; Chauveau, J.; Savoy-Navarro, A.; Andricek, L.; Moser, H.-G.; Cowan, R.f.; Fisher, P.; Yamamoto, R.K.; Kenney, ClMl; Boos, E.E.; Merkin, M.; Chen, S.; Chakraborty, D.; Dyshkant, A.; Hedin, D.; Zutshi, V.; Galkin, V.; D'Ascenzo, N.; Ossetski, D.; Saveliev, V.; Kapusta, F.; De Masi, R.; Vrba, V.; Lu, C.; McDonald, K.T.; Smith, A.J.S.; Bortoletto, D.; Coath, R.; Crooks, J.; Damerell, C.; Gibson, M.; Nichols, A.; Stanitzki, M.; Strube, J.; Turchetta, R.; Tyndel, M.; Weber, M.; Worm, S.; Zhang, Z.; Barklow, T.L.; Belymam, A.; Breidenbach, M.; Cassell, R.; Craddock, W.; Deaconu, C.; Dragone, A.; Graf, N.A.; Haller, G.; Herbst, R.; Hewett, J.L.; Jaros, J.A.; Johnson, A.S.; Kim, P.C.; MacFarlane, D.B.; Markiewicz, T.; Maruyama, T.; McCormick, J.; Moffeit, K.; Neal, H.A.; Nelson, T.K.; Oriunno, M.; Partridge, R.; Peskin, M.E.; Rizzo, T.G.; Rowson, P.; Su, D.; Woods, M.; Chakrabarti, S.; Dieguez, A.; Garrido, Ll.; Kaminski, J.; Conway, J.S.; Chertok, M.; Gunion, J.; Holbrook, B.; Lander, R.L.; Tripathi, S.M.; Fadeyev, V.; Schumm, B.A.; Oreglia, M.; Gill, J.; Nauenberg, U.; Oleinik, G.; Wagner, S.R.; Ranjan, K.; Shivpuri, R.; Varner, G.S.; Orava, R.; Van Kooten, R.; Bilki, B.; Charles, M.; Kim, T.J.; Mallik, U.; Norbeck, E.; Onel, Y.; Brau, B.P.; Willocq, S.; Taylor, G.N.; Riles, Keith; Yang, H.-J.; Kriske, R.; Cremaldi, L.; Rahmat, R.; Lastovicka-Medin, G.; Seidel, S.; Hildreth, M.D.; Wayne, M.; Brau, J.E.; Frey, R.; Sinev, N.; Strom, D.M.; Torrence, E.; Banda, Y.; Burrows, P.N.; Devetak, E.; Foster, B.; Lastovicka, T.; Li, Y.-M.; Nomerotski, A.; Riera-Babures, J.; Vilasis-Cardona, X.; Manly, S.; Adeva, B.; Iglesias Escudero, C.; Vazquez Regueiro, P.; Saborido Silva, J.J.; Gallas Torreira, A.; Gao, D.; Jie, W.; Jungfeng, Y.; Li, C.; Liu, S.; Liu, Y.; Sun, Y.; Wang, Q.; Yi, J.; Yonggang, W.; Zhao, Z.; De, K.; Farbin, A.; Park, S.; Smith, J.; White, A.P.; Yu, J.; Lou, X.C.; Abe, T.; Iwasaki, M.; Lubatti, H.J.; Band, H.R.; Feyzi, F.; Prepost, R.; Karchin, P.E.; Milstene, C.; Baltay, C.; Dhawan, S.; Kwon, Y.-J.

    2009-01-01

    Letter of intent describing SiD (Silicon Detector) for consideration by the International Linear Collider IDAG panel. This detector concept is founded on the use of silicon detectors for vertexing, tracking, and electromagnetic calorimetry. The detector has been cost-optimized as a general-purpose detector for a 500 GeV electron-positron linear collider.

  11. Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region.

    Science.gov (United States)

    Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

    2018-03-19

    In this study, InSb p-i-n photodetectors with In 0.82 Al 0.18 Sb barrier layers were grown on a (100) 6° offcut Si substrate by heteroepitaxy via an AlSb/GaSb buffer. Based on an interfacial misfit array growth mode, the dislocations at the GaSb/Si and InSb/AlSb interfaces accommodated the lattice mismatch. The In 0.82 Al 0.18 Sb barrier layer increased the 77 K R 0 A of the detector. From 180 K to 300 K, the generation-recombination mechanism dominated the dark current generation in the detector and surface leakage became dominant below 120 K. The detector exhibited a 77 K responsivity of 0.475 A/W and a Johnson-noise-limited detectivity of 3.08 × 10 9 cmHz 1/2 W -1 at 5.3 µm.

  12. Characterization of the Diamant detector array from the de-excitation by emission of two particles of the 44Ti nuclei in the reaction 16O + 28Si at 50 MeV and 60 MeV

    International Nuclear Information System (INIS)

    Sellam-Cabaussel, Dalila

    1996-01-01

    We have characterized the response of the charged particle detector array DIAMANT in the reaction 16 O + 28 Si at 50 MeV and 60 MeV. We were able to select and study the deexcitation of the two particle channels for which the relative cross section is of the order of a few percent. The study of the energy distribution and the angular correlation of the emitted particles allowed a detailed test of the statistical model. The analysis of the results shows, for the first time, specific characteristics of the alpha particle emission from high spin states of the 44 Ti compound nucleus formed in the reaction. (author) [fr

  13. Photoelectric properties of n-SiC/n-Si heterojunctions

    Directory of Open Access Journals (Sweden)

    Semenov A. V.

    2012-10-01

    Full Text Available Photovoltaic effect in isotype heterotructure formed by nanocrystalline silicon carbide films on single crystal n-Si substrates (n-SiC/n-Si heterojunction was studied. The films were produced by direct ionic deposition method. The model that takes into account the quantum wells and potential barriers caused by band offsets was proposed to explain the current-voltage characteristics and photovoltaic properties of the heterostructure n-SiC/n-Si.

  14. The international linear collider. Technical design report. Vol. 4. Detectors

    International Nuclear Information System (INIS)

    Behnke, Ties; Brau, James E.; Burrows, Philip; Fuster, Juan; Peskin, Michael; Stanitzki, Marcel; Sugimoto, Yasuhiro; Yamada, Sakue; Yamamoto, Hitoshi

    2013-01-01

    The following topics are dealt with: The Si Vertex detectors, the main tracker, calorimetry, muon detectors, the superconducting spectrometer magnet, the detector electronics and data acquisition, simulation and reconstruction, benchmarking, costs. (HSI)

  15. The international linear collider. Technical design report. Vol. 4. Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Behnke, Ties; Brau, James E.; Burrows, Philip; Fuster, Juan; Peskin, Michael; Stanitzki, Marcel; Sugimoto, Yasuhiro; Yamada, Sakue; Yamamoto, Hitoshi (eds.)

    2013-10-01

    The following topics are dealt with: The Si Vertex detectors, the main tracker, calorimetry, muon detectors, the superconducting spectrometer magnet, the detector electronics and data acquisition, simulation and reconstruction, benchmarking, costs. (HSI)

  16. Characterization of imaging pixel detectors of Si and CdTe read out with the counting X-ray chip MPEC 2.3; Charakterisierung von bildgebenden Pixeldetektoren aus Si und CdTe ausgelesen mit dem zaehlenden Roentgenchip MPEC 2.3

    Energy Technology Data Exchange (ETDEWEB)

    Loecker, M.

    2007-04-15

    Single photon counting detectors with Si- and CdTe-sensors have been constructed and characterized. As readout chip the MPEC 2.3 is used which consists of 32 x 32 pixels with 200 x 200 {mu}m{sup 2} pixel size and which has a high count rate cabability (1 MHz per pixel) as well as a low noise performance (55 e{sup -}). Measurements and simulations of the detector homogeneity are presented. It could be shown that the theoretical maximum of the homogeneity is reached (quantum limit). By means of the double threshold of the MPEC chip the image contrast can be enhanced which is demonstrated by measurement and simulation. Also, multi-chip-modules consisting of 4 MPEC chips and a single Si- or CdTe-sensor have been constructed and successfully operated. With these modules modulation-transfer-function measurements have been done showing a good spatial resolution of the detectors. In addition, multi-chip-modules according to the Sparse-CMOS concept have been built and tests characterizing the interconnection technologies have been performed.

  17. Reduction of basal plane defects in (11-22) semipolar InGaN/GaN MQWs fabricated on patterned (113) Si substrates by introducing AlGaN barrier layers

    Energy Technology Data Exchange (ETDEWEB)

    Uesugi, Kenjiro; Hikosaka, Toshiki; Ono, Hiroshi; Sakano, Tatsunori; Nunoue, Shinya [Corporate Research and Development Center, Toshiba Corporation, Kawasaki (Japan)

    2017-08-15

    GaN grown on nonpolar or semipolar faces have been widely developed as a promising material for the next generation optical and electronic devices. In this work, (11-22) semipolar InGaN/GaN MQWs were grown on patterned (113) Si substrates and fabricated into thin-film-type flip-chip LEDs. From CL and TEM measurement, generation of basal plane defects (BPDs) around MQWs and Strain-relaxation layers (SRLs) has been observed. The relationship between MQW structures and formation of BPDs has been investigated. By optimizing MQW structures, light output power and external quantum efficiency have been improved with thick InGaN well layers and GaN barrier layers. Introducing AlGaN barrier layers has enabled further reduction of BPDs in MQWs and, as a result, an enhancement of EQE has been achieved. The maximum EQE value of the sample with AlGaN barrier layers was 12.9%.This result indicates that the reduction of BPDs is an effective approach for obtaining the high-efficiency semipolar LEDs on Si substrates. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Radiation detectors

    International Nuclear Information System (INIS)

    2013-01-01

    This sixth chapter presents the operational principles of the radiation detectors; detection using photographic emulsions; thermoluminescent detectors; gas detectors; scintillation detectors; liquid scintillation detectors; detectors using semiconductor materials; calibration of detectors; Bragg-Gray theory; measurement chain and uncertainties associated to measurements

  19. Heavy ion recoil spectrometry of Si{sub x}Ge{sub 1-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Walker, S.R.; Johnston, P.N.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Cohen, D.D.; Dytlewski, N. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Hult, M.; Whitlow, H.J. [Lund Institute of Technology, Solvegatan (Sweden). Department of Nuclear Physics; Zaring, C.; Oestling, M. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics

    1993-12-31

    Mass and energy dispersive recoil spectrometry employing 77 MeV {sup 127}I ions from ANTARES (FN Tandem) facility at Lucas Heights has been used to examine the isotopic composition of samples of Si{sub x}Ge{sub 1-x} grown at the Australian National University by Electron Beam Evaporation (EBE). The recoiling target nuclei were analysed by a Time Of Flight and Energy (TOF-E) detector telescope composed of two timing pickoff detectors and a surface barrier (energy) detector. From the time of flight and energy, the ion mass can be determined and individual depth distributions for each element can be obtained. Recoil spectrometry has shown the presence of oxygen in the Si{sub x}Ge{sub 1-x} layer and has enabled the separate determination of energy spectra for individual elements. 9 refs., 3 figs.

  20. Multilayer moisture barrier

    Science.gov (United States)

    Pankow, Joel W; Jorgensen, Gary J; Terwilliger, Kent M; Glick, Stephen H; Isomaki, Nora; Harkonen, Kari; Turkulainen, Tommy

    2015-04-21

    A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al.sub.2O.sub.3, AlSiO.sub.x, TiO.sub.2, and an Al.sub.2O.sub.3/TiO.sub.2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiO.sub.xN.sub.y film.

  1. The ATLAS inner detector semiconductor tracker (Si and GaAs strips) review of the 1995 beam tests at the CERN SPS H8 beamline

    CERN Document Server

    Moorhead, G F

    1995-01-01

    This talk will consist of a brief review of the ATLAS Inner Detector (ID) Semiconductor Tracker (SCT) strip detector (both silicon and gallium arsenide) beam tests conducted at the ATLAS test beam facility at the CERN SPS H8 beamline. It will include a brief overview of the H8 facilities, the experimental layout of the SCT/Strip apparatus, the data acquisition system, some of the online software tools and the high precision silicon hodoscope and timing modules used. A very brief indication of some of the main varieties of detector systems tested and the measurements performed will be given. Throughout some emphasis will be placed on the contributions and-interests of members of the Melbourne group. (author).

  2. Performance of a 128 channel analogue front-end chip for read-out of Si strip detector modules for LHC experiments

    CERN Document Server

    Chesi, Enrico Guido; Cindro, V; Dabrowski, W; Ferrère, D; Kramberger, G; Kaplon, J; Lacasta, C; Lozano-Bahilo, J; Mikuz, M; Morone, C; Roe, S; Szczygiel, R; Tadel, M; Weilhammer, Peter; Zsenei, A

    2000-01-01

    We present a 128-channel analogue front-end chip, SCT128A-HC, for readout of silicon strip detectors employed in the inner tracking detectors of the LHC experiment. The chip is produced in the radiation hard DMILL technology. The architecture of the chip and critical design issues are discussed. The performance of the chip has been evaluated in details in the test bench and is presented in the paper. The chip is used to read out prototype analogue modules compatible in size, functionality and performance with the ATLAS SCT base line modules. Several full size detector modules equipped with SCT128A-HC chips has been built and tested successfully in the lab with beta particles as well as in the test beam. The results concerning the signal-to-noise ratio, noise occupancy, efficiency and spatial resolution are presented. The radiation hardness issues are discussed. (5 refs).

  3. Silicon Detector Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H.; Burrows, P.; Oreglia, M.

    2010-05-26

    This document presents the current status of SiD's effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R&D needed to provide the technical basis for an optimised SiD.

  4. GaAs detectors with an ultra-thin Schottky contact for spectrometry of charged particles

    Energy Technology Data Exchange (ETDEWEB)

    Chernykh, S.V., E-mail: chsv_84@mail.ru [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Chernykh, A.V. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Didenko, S.I.; Baryshnikov, F.M. [National University of Science and Technology “MISIS”, Moscow (Russian Federation); Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Burtebayev, N. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan); Britvich, G.I. [Institute of High Energy Physics, Protvino, Moscow region (Russian Federation); Chubenko, A.P. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow (Russian Federation); Guly, V.G.; Glybin, Yu.N. [LLC “SNIIP Plus”, Moscow (Russian Federation); Zholdybayev, T.K.; Burtebayeva, J.T.; Nassurlla, M. [Research Institute of Experimental and Theoretical Physics, Almaty (Kazakhstan); Institute of Nuclear Physics, Almaty (Kazakhstan)

    2017-02-11

    For the first time, samples of particle detectors based on high-purity GaAs epilayers with an active area of 25 and 80 mm{sup 2} and an ultra-thin Pt Schottky barrier were fabricated for use in the spectrometry of charged particles and their operating characteristics were studied. The obtained FWHM of 14.2 (for 25 mm{sup 2} detector) and 15.5 keV (for 80 mm{sup 2} detector) on the 5.499 MeV line of {sup 238}Pu is at the level of silicon spectrometric detectors. It was found that the main component that determines the energy resolution of the detector is a fluctuation in the number of collected electron–hole pairs. This allows us to state that the obtained energy resolution is close to the limit for VPE GaAs. - Highlights: • VPE GaAs particle detectors with an active area of 25 and 80 mm{sup 2} were fabricated. • 120 Å ultra-thin Pt Schottky barrier was used as a rectifying contact. • The obtained FWHM of 14.2 keV ({sup 238}Pu) is at the level of Si spectrometric detectors. • Various components of the total energy resolution were analyzed. • It was shown that obtained energy resolution is close to its limit for VPE GaAs.

  5. (Li) detector characteristics on the accuracy in X-ray analysis using the

    African Journals Online (AJOL)

    A study has been carried out to show how variations in Si(Li) detector characteristics affect the accuracy of X-ray spectra evaluation. The detector characteristics investigated are Be window thickness, Au layer, Si dead layer and Si Detector Sensitive volume. For each of the detector parameters, different thickness values ...

  6. Development of BSO (Bi.sub.4./sub.Si.sub.3./sub.O.sub.12./sub.) crystal for radiation detector

    Czech Academy of Sciences Publication Activity Database

    Ishii, M.; Harada, K.; Hirose, Y.; Senguttuvan, N.; Kobayashi, M.; Yamaga, I.; Ueno, H.; Miwa, K.; Nikl, Martin; Feng, X. Q.

    2002-01-01

    Roč. 19, - (2002), s. 201-212 ISSN 0925-3467 R&D Projects: GA MŠk ME 519 Institutional research plan: CEZ:AV0Z1010914 Keywords : bismuth silicate * radiation detector Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.879, year: 2002

  7. Development of antibody-modified chitosan nanoparticles for the targeted delivery of siRNA across the blood-brain barrier as a strategy for inhibiting HIV replication in astrocytes.

    Science.gov (United States)

    Gu, Jijin; Al-Bayati, Karam; Ho, Emmanuel A

    2017-08-01

    RNA interference (RNAi)-mediated gene silencing offers a novel treatment and prevention strategy for human immunodeficiency virus (HIV) infection. HIV was found to infect and replicate in human brain cells and can cause neuroinfections and neurological deterioration. We designed dual-antibody-modified chitosan/small interfering RNA (siRNA) nanoparticles to deliver siRNA across the blood-brain barrier (BBB) targeting HIV-infected brain astrocytes as a strategy for inhibiting HIV replication. We hypothesized that transferrin antibody and bradykinin B2 antibody could specifically bind to the transferrin receptor (TfR) and bradykinin B2 receptor (B2R), respectively, and deliver siRNA across the BBB into astrocytes as potential targeting ligands. In this study, chitosan nanoparticles (CS-NPs) were prepared by a complex coacervation method in the presence of siRNA, and antibody was chemically conjugated to the nanoparticles. The antibody-modified chitosan nanoparticles (Ab-CS-NPs) were spherical in shape, with an average particle size of 235.7 ± 10.2 nm and a zeta potential of 22.88 ± 1.78 mV. The therapeutic potential of the nanoparticles was evaluated based on their cellular uptake and gene silencing efficiency. Cellular accumulation and gene silencing efficiency of Ab-CS-NPs in astrocytes were significantly improved compared to non-modified CS-NPs and single-antibody-modified CS-NPs. These results suggest that the combination of anti-Tf antibody and anti-B2 antibody significantly increased the knockdown effect of siRNA-loaded nanoparticles. Thus, antibody-mediated dual-targeting nanoparticles are an efficient and promising delivery strategy for inhibiting HIV replication in astrocytes. Graphical abstract Graphic representation of dual-antibody-conjugated chitosan nanoparticles for the targeted delivery of siRNA across the blood-brain barrier (BBB) for inhibiting HIV replication in astrocytes. a Nanoparticle delivery to the BBB and penetration. b Tf

  8. Performances of the Si microstrip detector of the STAR experiment at RHIC; Performances du detecteur en silicium a micropistes de l'experience STAR a RHIC

    Energy Technology Data Exchange (ETDEWEB)

    Bouchet, J

    2007-10-15

    The Silicon Strip Detector (SSD) is the fourth layer of detector using a double-sided microstrip technology of the STAR experiment at RHIC, completing STAR's inner tracking device. The goal of STAR is to study heavy ions collisions in order to probe the existence of the quark gluon plasma (QGP), a deconfined state of nuclear matter. Strangeness enhancement, such as {kappa}{sub S}{sup 0}, {lambda}, {xi} and {omega}, for particles production, has been proposed to sign the formation of QGP. Then precise measurement of secondary vertices is needed. The SSD will also permit an attempt to use the inner tracking device to measure charm and beauty with direct topological identification. It was proposed to enhance the STAR tracking capabilities by providing a better connection between reconstructed tracks in the main tracking device (TPC) and the initial vertex detector (SVT). In this thesis, we will present the intrinsic performances of the SSD and its impact on the inner tracking system performances by studying Cu-Cu collisions occurred at RHIC in 2005. We show that the SSD detector has excellent performances in terms of resolution: (945 {+-} 18) {mu}m in azimuth and (1021 {+-} 13) {mu}m along the beam axis. For the final result when SSD is associated to the SVT the resolutions are (281 {+-} 1) {mu}m and (213 {+-} 0.8) {mu}m in azimuth and along the beam axis respectively. The resolution reached by the addition of the Silicon Vertex detectors of STAR will allow the search for rare particles like charm and beauty, which have a decay-length of the order of hundred microns.

  9. Measurements of jet rates with the anti-$k_T$ and SiScone algorithms at LEP with the OPAL detector

    CERN Document Server

    Verbytskyi, A

    2016-01-01

    We study jet production in $e^+e^−$ annihilation to hadrons with data recorded by the OPAL experiment at LEP at centre-of-mass energies between 90 GeV and 207 GeV. The jet $e^+e^−$ production rates were measured for the first time with the anti-$k_T$ and SiScone jet clustering algorithms. We compare the data with predictions by modern Monte Carlo event generators.

  10. Determination of TFTR far-field neutron detector efficiencies by local neutron flux spectrum measurement

    Energy Technology Data Exchange (ETDEWEB)

    Jassby, D.L.; Ascione, G.; Kugel, H.W.; Roquemore, A.L.; Barcelo, T.W. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Kumar, A. [University of California, Los Angeles, California 90024 (United States)

    1997-01-01

    Neutron detectors have often been located on the tokamak fusion test reactor (TFTR) test cell floor 3 m or more from the vacuum vessel for ease of detector access, to reduce radiation damage, minimize count saturation problems, and to avoid high magnetic fields. These detectors include Si surface-barrier diodes, fission chambers, natural diamond detectors, and T{sub 2} production in a moderated {sup 3}He cell. To evaluate the performance of these detectors during deuterium{endash}tritium (D{endash}T) operation, we determined the neutron flux spectrum incident on the principal detector enclosure using nuclide sample sets containing Al, Ti, Fe, Co, Cu, Zn, Ni, Zr, Nb, In, and Au activation foils. Foils were installed and then removed after ample exposure to TFTR D{endash}T neutrons. High efficiency, high purity Ge detectors were used for gamma spectroscopy of the irradiated foils. The incident neutron fluence and spectral distribution were unfolded from the measured results, and used to derive absolute detector efficiencies. {copyright} {ital 1997 American Institute of Physics.}

  11. Cryogenic Tracking Detectors

    CERN Multimedia

    Luukka, P R; Tuominen, E M; Mikuz, M

    2002-01-01

    The recent advances in Si and diamond detector technology give hope of a simple solution to the radiation hardness problem for vertex trackers at the LHC. In particular, we have recently demonstrated that operating a heavily irradiated Si detector at liquid nitrogen (LN$_2$) temperature results in significant recovery of Charge Collection Efficiency (CCE). Among other potential benefits of operation at cryogenic temperatures are the use of large low-resistivity wafers, simple processing, higher and faster electrical signal because of higher mobility and drift velocity of carriers, and lower noise of the readout circuit. A substantial reduction in sensor cost could result The first goal of the approved extension of the RD39 program is to demonstrate that irradiation at low temperature in situ during operation does not affect the results obtained so far by cooling detectors which were irradiated at room temperature. In particular we shall concentrate on processes and materials that could significantly reduce th...

  12. SiD Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  13. Tailoring Lipid and Polymeric Nanoparticles as siRNA Carriers towards the Blood-Brain Barrier – from Targeting to Safe Administration

    DEFF Research Database (Denmark)

    Gomes, Maria João; Fernandes, Carlos; Martins, Susana

    2017-01-01

    . The interaction of modified nanoparticles with brain endothelial cells increased 3-fold compared to non-modified lipid nanoparticles, and 4-fold compared to non-modified PLGA nanoparticles, respectively. These nanosystems, which were also demonstrated to be safe for human brain endothelial cells, without...... and efficient delivery to its target, two different nanoparticles platforms, solid lipid (SLN) and poly-lactic-co-glycolic (PLGA) nanoparticles were used in this study. Polymeric PLGA nanoparticles were around 115 nm in size and had 50 % of siRNA association efficiency, while SLN presented 150 nm...

  14. A monolithic silicon detector telescope

    International Nuclear Information System (INIS)

    Cardella, G.; Amorini, F.; Cabibbo, M.; Di Pietro, A.; Fallica, G.; Franzo, G.; Figuera, P.; Papa, M.; Pappalardo, G.; Percolla, G.; Priolo, F.; Privitera, V.; Rizzo, F.; Tudisco, S.

    1996-01-01

    An ultrathin silicon detector (1 μm) thick implanted on a standard 400 μm Si-detector has been built to realize a monolithic telescope detector for simultaneous charge and energy determination of charged particles. The performances of the telescope have been tested using standard alpha sources and fragments emitted in nuclear reactions with different projectile-target colliding systems. An excellent charge resolution has been obtained for low energy (less than 5 MeV) light nuclei. A multi-array lay-out of such detectors is under construction to charge identify the particles emitted in reactions induced by low energy radioactive beams. (orig.)

  15. SiGe/Si electronics and optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wang, K.L.; Karunasiri, R.P.G. [Univ. of California, Los Angeles, CA (United States)

    1993-05-01

    Recently, there is an increased interest in the use of SiGe layered material for integration with Si technology. SiGe offers the opportunity for the first time to realize the advantages of heterojunctions in Si-based technology. In this article, the present status of the SiGe epitaxial growth techniques will be discussed from the point of view of device application. New directions will be presented. Next, electronic devices to be reviewed include bipolars and field effect transistors. The progress of tunneling devices will also be discussed. Then, the realization of quantum wells and superlattices for optoelectronics will be discussed. Then, the realization of quantum wells and superlattices for optoelectronics will be discussed. These will include Si-based detectors and modulators based on interband and intersubband transitions. One of the focuses will be the normal incidence operation for intersubband devices. Finally, the current status in the quest of light emitters will be briefly addressed. 44 refs., 15 figs.

  16. Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments

    Directory of Open Access Journals (Sweden)

    Kai-Huang Chen

    2017-12-01

    Full Text Available In this study, the hopping conduction distance and bipolar switching properties of the Gd:SiOx thin film by (radio frequency, rf rf sputtering technology for applications in RRAM devices were calculated and investigated. To discuss and verify the electrical switching mechanism in various different constant compliance currents, the typical current versus applied voltage (I-V characteristics of gadolinium oxide RRAM devices was transferred and fitted. Finally, the transmission electrons’ switching behavior between the TiN bottom electrode and Pt top electrode in the initial metallic filament forming process of the gadolinium oxide thin film RRAM devices for low resistance state (LRS/high resistance state (HRS was described and explained in a simulated physical diagram model.

  17. Engineering of tunnel barrier for highly integrated nonvolatile memory applications

    Science.gov (United States)

    You, Hee-Wook; Son, Jung-Woo; Cho, Won-Ju

    2011-03-01

    In this paper, the engineered tunnel barrier technology is introduced by using the engineered tunnel barrier of VARIOT type (SiO2/Si3N4/SiO2) and CRESTED type (Si3N4/SiO2/Si3N4) with Si3N4 and high- k HfO2 layers as charge trapping layers, respectively. In addition, the high- k stacked VARIOT type of SiO2/HfO2/Al2O3 and Al2O3/HfO2/Al2O3 are compared with O/N/O tunnel barrier memory. As a result, the engineered tunnel barrier memory device showed excellent memory characteristics compared to the single SiO2 tunnel barrier memory device, such as very high P/E (program/erase) speed, good retention time and no degradation in endurance characteristics.

  18. Conceptual design studies for a CEPC detector

    Energy Technology Data Exchange (ETDEWEB)

    Chekanov, S. V.; Demarteau, M.

    2016-11-30

    The physics potential of the Circular Electron Positron Collider (CEPC) can be significantly strengthened by two detectors with complementary designs. A promising detector approach based on the Silicon Detector (SiD) designed for the International Linear Collider (ILC) is presented. Several simplifications of this detector for the lower energies expected at the CEPC are proposed. A number of cost optimizations of this detector are illustrated using full detector simulations. We show that the proposed changes will enable one to reach the physics goals at the CEPC.

  19. Conceptual Design Studies for a CEPC Detector

    Science.gov (United States)

    Chekanov, S. V.; Demarteau, M.

    The physics potential of the Circular Electron Positron Collider (CEPC) can be significantly strengthened by two detectors with complementary designs. A promising detector approach based on the Silicon Detector (SiD) designed for the International Linear Collider (ILC) is presented. Several simplifications of this detector for the lower energies expected at the CEPC are proposed. A number of cost optimizations of this detector are illustrated using full detector simulations. We show that the proposed changes will enable one to reach the physics goals at the CEPC.

  20. Detectors - Electronics; Detecteurs - Electronique

    Energy Technology Data Exchange (ETDEWEB)

    Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J. [Lab. de Physique Corpusculaire, Caen Univ., 14 (France)

    1998-04-01

    The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X {yields} e{sup -} converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the {sup 3}He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

  1. Detector trends

    International Nuclear Information System (INIS)

    Charpak, G.

    1986-01-01

    The author describes briefly the development of detectors for high energy physics experiments. Especially considered are semiconductor microstrip detectors, drift tubes, holographic bubble chambers, scintillating fiber optics, and calorimeters. (HSI).

  2. Detector Unit

    CERN Multimedia

    1960-01-01

    Original detector unit of the Instituut voor Kernfysisch Onderzoek (IKO) BOL project. This detector unit shows that silicon detectors for nuclear physics particle detection were already developed and in use in the 1960's in Amsterdam. Also the idea of putting 'strips' onto the silicon for high spatial resolution of a particle's impact on the detector were implemented in the BOL project which used 64 of these detector units. The IKO BOL project with its silicon particle detectors was designed, built and operated from 1965 to roughly 1977. Detector Unit of the BOL project: These detectors, notably the ‘checkerboard detector’, were developed during the years 1964-1968 in Amsterdam, The Netherlands, by the Natuurkundig Laboratorium of the N.V. Philips Gloeilampen Fabrieken. This was done in close collaboration with the Instituut voor Kernfysisch Onderzoek (IKO) where the read-out electronics for their use in the BOL Project was developed and produced.

  3. Gamma ray detector modules

    Science.gov (United States)

    Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

    2009-01-01

    A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

  4. Infrared detectors

    CERN Document Server

    Rogalski, Antonio

    2010-01-01

    This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

  5. Thin epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Stab, L.

    1989-01-01

    Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

  6. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  7. CLIC Detector and Physics Status

    CERN Document Server

    AUTHOR|(SzGeCERN)627941

    2017-01-01

    This contribution to LCWS2016 presents recent developments within the CLICdp collaboration. An updated scenario for the staged operation of CLIC has been published; the accelerator will operate at 380 GeV, 1.5 TeV and 3 TeV. The lowest energy stage is optimised for precision Higgs and top physics, while the higher energy stages offer extended Higgs and BSM physics sensitivity. The detector models CLIC_SiD and CLIC_ILD have been replaced by a single optimised detector; CLICdet. Performance studies and R&D in technologies to meet the requirements for this detector design are ongoing.

  8. Investigation of the radiation damage of GaAs detectors by protons, pions and neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Luebelsmeyer, K. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Arbabi, S. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Braunschweig, W. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Chu, Z. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Krais, R. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Kubicki, T. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Rente, C. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Syben, O. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Tenbusch, F. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Toporowski, M. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Wittmer, B. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Xiao, W.J. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.

    1997-05-01

    Surface barrier detectors processed in Aachen using semi-insulating (SI) GaAs from several manufacturers have been irradiated with high fluences of neutrons (mean energy 1 MeV, fluence up to {Phi}{sub n} {proportional_to} 5 x 10{sup 14} cm{sup -2}), pions (191 MeV, fluence up to {Phi}{sub {pi}} {proportional_to} 0.6 x 10{sup 14} cm{sup -2}) and protons (23 GeV, fluence up to {Phi}{sub p} {proportional_to} 2 x 10{sup 14} cm{sup -2}). The detectors have been characterized in terms of macroscopic quantities like I-V characteristic curves and charge collection efficiencies for incident minimum ionizing- (mip) as well as {alpha}-particles. All detectors work well after the exposure. At the highest fluences a sizable degradation in the charge collection efficiencies has been observed for all investigated materials. SI-GaAs material with low carbon (LC) content seems to be less affected than substrates with a higher carbon concentration. At the highest irradiation level the mip signal from a 250 {mu}m thick detector made of LC material amounts to 8000 electrons (at 400 V bias voltage) independent of peaking times between 40 ns and 2.2 {mu}s. The leakage currents for this material are even reduced after the irradiation. (orig.).

  9. Investigation of the radiation damage of GaAs detectors by protons, pions and neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Tenbusch, F. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Arbabi, S. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Braunschweig, W. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Chu, Z. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Krais, R. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Kubicki, T. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Luebelsmeyer, K. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Rente, C. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Syben, O. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Toporowski, M. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Wittmer, B. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Xiao, W.J. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.

    1997-04-01

    Surface barrier detectors processed in Aachen using SI-GaAs from several manufacturers have been irradiated with high fluences of neutrons (mean energy 1 MeV, fluence up to {Phi}{sub n}{proportional_to}5 x 10{sup 14} cm{sup -2}), pions (191 MeV, fluence up to {Phi}{sub {pi}}{proportional_to}0.6 x 10{sup 14} cm{sup -2}) and protons (23 GeV, fluence up to {Phi}{sub p}{proportional_to}2 x 10{sup 14} cm{sup -2}). The detectors have been characterized in terms of macroscopic quantities like I-V characteristic curves and charge collection efficiencies for incident minimum ionizing- (mip) as well as {alpha}-particles. All detectors work well after the exposure. At the highest fluences a sizable degradation concerning the charge collection efficiencies has been observed for all investigated materials. SI-GaAs material with low carbon content (LC material from FCM, Freiberg) seems to be less affected than substrates with a higher carbon concentration. At the highest irradiation level the mip signal from a 250 {mu}m thick detector made of LC material amounts to 8000 electrons (at 400 V bias voltage) independent of peaking times between 40 ns and 2.2 {mu}s. The leakage currents for this material are even reduced after the irradiation. (orig.).

  10. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  11. Infrared detectors, focal plane arrays, and imaging sensors; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989

    Science.gov (United States)

    Dereniak, Eustace L.; Sampson, Robert T.

    1989-10-01

    The present conference on advancements in IR detectors, Schottky-barrier focal plane arrays, CCD image analysis, and HgCdTe materials gives attention to a 256 x 256 PtSi array for IR astronomy, proposals for a second-generation meteosat's advanced optical payload, cryogenic bipolar technology for on-focal-plane signal processing, a parallel cellular processing system for fast generation of perspective plots, and ultrahigh-speed CCD image sensors for scanning applications. Also discussed are MBE GaAs rib waveguide experiments at 10.6 microns, an interferometric thermal detector, the development status of superconducting IR detector research, the absorption coefficients of n-type Hg(1-x)Cd(x)Te samples, and the influence of the surface channel on crosstalk in HgCdTe photovoltaic arrays.

  12. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  13. Surface Cracking and Interface Reaction Associated Delamination Failure of Thermal and Environmental Barrier Coatings

    National Research Council Canada - National Science Library

    Zhu, Dongming

    2003-01-01

    ...%Y2O3 and mullite/BSAS/Si thermal and environmental barrier coating system on SiC/SiC ceramic matrix composites were characterized after long-term combined laser thermal gradient and furnace cyclic...

  14. Transmutation detectors

    Czech Academy of Sciences Publication Activity Database

    Viererbl, L.; Lahodová, Z.; Klupák, V.; Sus, F.; Kučera, Jan; Kůs, P.; Marek, M.

    2011-01-01

    Roč. 632, č. 1 (2011), s. 109-111 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : Transmutation detector * Activation method * Neutron detector * Neutron fluence Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.207, year: 2011

  15. Vapor Detector

    Science.gov (United States)

    Waddell, H. M.; Garrard, G. C.; Houston, D. W.

    1982-01-01

    Detector eliminates need for removing covers to take samples. Detector is canister consisting of screw-in base and clear plastic tube that contains two colors of silica gel. Monoethylhydrazine and nitrogen tetroxide vapors are visually monitored with canister containing color-changing gels.

  16. Spectral response of multi-element silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ludewigt, B.A.; Rossington, C.S.; Chapman, K. [Univ. of California, Berkeley, CA (United States)

    1997-04-01

    Multi-element silicon strip detectors, in conjunction with integrated circuit pulse-processing electronics, offer an attractive alternative to conventional lithium-drifted silicon Si(Li) and high purity germanium detectors (HPGe) for high count rate, low noise synchrotron x-ray fluorescence applications. One of the major differences between the segmented Si detectors and the commercially available single-element Si(Li) or HPGe detectors is that hundreds of elements can be fabricated on a single Si substrate using standard silicon processing technologies. The segmentation of the detector substrate into many small elements results in very low noise performance at or near, room temperature, and the count rate of the detector is increased many-fold due to the multiplication in the total number of detectors. Traditionally, a single channel of detector with electronics can handle {approximately}100 kHz count rates while maintaining good energy resolution; the segmented detectors can operate at greater than MHz count rates merely due to the multiplication in the number of channels. One of the most critical aspects in the development of the segmented detectors is characterizing the charge sharing and charge loss that occur between the individual detector strips, and determining how these affect the spectral response of the detectors.

  17. Scintillating fiber detector

    CERN Document Server

    Vozak, Matous

    2016-01-01

    NA61 is one of the physics experiments at CERN dedicated to study hadron states coming from interactions of SPS beams with various targets. To determine the position of a secondary beam, three proportional chambers are placed along the beamline. However, these chambers tend to have slow response. In order to obtain more precise time information, use of another detector is being considered. Fast response and compact size is making scintillation fiber (SciFi) with silicon photomultiplier (Si-PM) read out a good candidate. This report is focused on analysing data from SciFi collected in a test beam at the beginning of July 2016.

  18. Cryogenic detectors

    International Nuclear Information System (INIS)

    Zehnder, A.

    1987-01-01

    Presently the development of new large scale detector systems, used in very high energy physics experiments, is very active. In the low energy range, the introduction of charge coupled devices allows improved spacial and energy resolution. In the keV region, high resolution can only be achieved via the well established diffraction spectrometers with the well-known disadvantage of a small throughput. There exist no efficient detectors for non-ionizing radiation such as coherent nuclear scattering of weakly interacting particles. The development of high resolution solid state detectors in the keV-region with the possibility of nuclear recoil detection is therefore highly desired. Such detectors applied in astro and particle physics would thus allow one to obtain new information not achievable otherwise. Three types of cryogenic detectors exist: Calorimeters/Bolometers. This type is sensitive to the produced excess phonons and measures the deposited energy by detecting the heat pulses. Excess charge carriers should be used to produce phonons. Tunneling junctions. This type is sensitive to excess charge produced by the Cooper pair breakup. Excess phonons should be used to break up Cooper pairs. Superheated superconducting granules (SSG). An SSG detector consists of granules, the metastability of which is disturbed by radiation. The Meissner effect then causes a change in the field distribution of the applied external field, which can be detected. The present paper discusses the basic principle of calorimetric and tunneling junction detectors and some of their applications. 26 refs., 7 figs., 1 tab

  19. Building barriers.

    Science.gov (United States)

    Turksen, Kursad

    2017-10-02

    Formation of tissue barriers starts in early development where it is critical for normal cell fate selection, differentiation and organogenesis. Barrier maintenance is critical to the ongoing function of organs during adulthood and aging. Dysfunctional tissue barrier formation and function at any stage of the organismal life cycle underlies many disease states.

  20. Search for delayed-proton emitter$^{24}$Si

    CERN Document Server

    Robertson, R G H; Freedman, S J

    1976-01-01

    Preliminary results of a search for /sup 24/Si produced via the (/sup 3/He,3n) reaction at approximately 60 MeV are reported. The detection apparatus consists of a helium-jet system, a proton detector and a recoil time-of-flight detector for mass identification. Despite some positive indications, it is concluded that the production cross- section for /sup 24/Si at this energy is probably less than 2% of the /sup 25/Si cross-section.

  1. DUMAND detector

    CERN Multimedia

    This object is one of the 256 other detectors of the DUMAND (Deep Underwater Muon And Neutrino Detection) experiment. The goal of the experiment was the construction of the first deep ocean high energy neutrino detector, to be placed at 4800 m depth in the Pacific Ocean off Keahole Point on the Big Island of Hawaii. A few years ago, a European conference with Cosmic experiments was organized at CERN as they were projects like DUMAND in Hawaii. Along with the conference, a temporary exhibition was organised as well. It was a collaboration of institutions from Germany, Japan, Switzerland and the U.S.A. CERN had borrowed equipment and objects from different institutes around the world, including this detector of the DUMAND experiment. Most of the equipment were sent back to the institutes, however this detector sphere was offered to a CERN member of the personnel.

  2. Detector applications

    International Nuclear Information System (INIS)

    Pehl, R.H.

    1977-10-01

    Semiconductor detectors are now applied to a very wide range of problems. The combination of relatively low cost, excellent energy resolution, and simultaneous broad energy-spectrum analysis is uniquely suited to many applications in both basic and applied physics. Alternative techniques, such as magnetic spectrometers for charged-particle spectroscopy, while offering better energy resolution, are bulky, expensive, and usually far more difficult to use. Furthermore, they do not directly provide the broad energy-spectrum measurements easily accomplished using semiconductor detectors. Scintillation detectors, which are approximately equivalent to semiconductor detectors in convenience and cost, exhibit 10 to 100 times worse energy resolution. However, their high efficiency and large potential size recommend their use in some measurements

  3. Radiation detector

    International Nuclear Information System (INIS)

    Gillies, W.

    1980-01-01

    The radiation detector for measuring e.g. a neutron flux consists of a central emitter, an insulating shell arranged around it, and a tube-shaped collector enclosing both. The emitter itself is composed of a great number of stranded, spiral wires of small diameter giving a defined flexibility to the detector. For emitter material Pt, Rh, V, Co, Ce, Os or Ta may be used. (DG) [de

  4. Particle detectors

    CERN Multimedia

    CERN. Geneva

    2001-01-01

    The lecture series will present an overview of the basic techniques and underlying physical principles of particle detectors, applied to current and future high energy physics experiments. Illustrating examples, mainly from the field of collider experiments, will demonstrate the performance and limitations of the various techniques. After an introduction the following topics will be covered: Tracking (gas, solid state based) - Scintillation and light detection Calorimetry - Particle Identification - Electronics and Data Acquisition - Detector Systems

  5. Smoke detectors

    International Nuclear Information System (INIS)

    Bryant, J.; Howes, J.H.; Smout, D.W.S.

    1979-01-01

    A smoke detector is described which provides a smoke sensing detector and an indicating device and in which a radioactive substance is used in conjunction with two ionisation chambers. The system includes an outer electrode, a collector electrode and an inner electrode which is made of or supports the radioactive substance which, in this case, is 241 Am. The invention takes advantage of the fact that smoke particles can be allowed to enter freely the inner ionisation chamber. (U.K.)

  6. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  7. Central collisions between 28Si nuclei at 12.4, 19.7 and 30.0 MeV per nucleon

    International Nuclear Information System (INIS)

    Meijer, R.J.

    1989-01-01

    The formation and decay of nuclei in central collisions of the 28 Si + 28 Si system at bombarding energies of 12.4, 19.7 and 30.0 MeV per nucleon is studied by analysis of the light particle (LP) spectra measured in coincidence with evaporation residues (ER) and measurements of the inclusive velocity distribution of ER's. From the last set of measurements a strong reduction of the ER cross section at increasing incident energy was observed and especially the relation to a possible vanishing fusion cross section is discussed. The coincidence measurements determines the LP pre-equilibrium contribution and the LP decay modes of highly excited systems. The ER's produced in fusion reactions between 28 Si nuclei were detected with a simple ionization chamber ΔE detector and a surface barrier E detector. For the LP detection multidetector systems consisting of CsI(TL) detectors were used. In this thesis the developments that have led to the construction of a CsI(TL) charged particle detector and of the Utrecht multidetector system, the experimental setup and the methods used in the acquisition, processing and analysis of the data, are described. The results of the heavy-ion velocity measurements are presented and conclusions are drawn about equilibrium and pre-equilibrium processes from the analysis. (H.W.). 124 refs.; 44 figs.; 24 tabs

  8. Photon detectors

    International Nuclear Information System (INIS)

    Va'vra, J.

    1995-10-01

    J. Seguinot and T. Ypsilantis have recently described the theory and history of Ring Imaging Cherenkov (RICH) detectors. In this paper, I will expand on these excellent review papers, by covering the various photon detector designs in greater detail, and by including discussion of mistakes made, and detector problems encountered, along the way. Photon detectors are among the most difficult devices used in physics experiments, because they must achieve high efficiency for photon transport and for the detection of single photo-electrons. For gaseous devices, this requires the correct choice of gas gain in order to prevent breakdown and wire aging, together with the use of low noise electronics having the maximum possible amplification. In addition, the detector must be constructed of materials which resist corrosion due to photosensitive materials such as, the detector enclosure must be tightly sealed in order to prevent oxygen leaks, etc. The most critical step is the selection of the photocathode material. Typically, a choice must be made between a solid (CsI) or gaseous photocathode (TMAE, TEA). A conservative approach favors a gaseous photocathode, since it is continuously being replaced by flushing, and permits the photon detectors to be easily serviced (the air sensitive photocathode can be removed at any time). In addition, it can be argued that we now know how to handle TMAE, which, as is generally accepted, is the best photocathode material available as far as quantum efficiency is concerned. However, it is a very fragile molecule, and therefore its use may result in relatively fast wire aging. A possible alternative is TEA, which, in the early days, was rejected because it requires expensive CaF 2 windows, which could be contaminated easily in the region of 8.3 eV and thus lose their UV transmission

  9. Peculiarities of semiconductor detector performance at low temperatures

    International Nuclear Information System (INIS)

    Afanas'eva, N.P.; Eremin, V.K.; Strokan, N.B.; Shamagdiev, A.Sh.

    1982-01-01

    Temperature dependence of Ge and Si detector signal amplitude is investigated in the temperature range of 180-4.2 K. Main processes conditioning temperature dependence of charging signal amplitude and semiconductor detector resolution are analyzed. Expressions for the evaluation of temperature values corresponding to the most considerable changes in the detector signals are obtained. Amplitude spectra of alpha particles emitted by 238 Pu (Esub(α)=5.495 MeV) recorded by optimazed Si detector at temperatures of 77 and 4.2 K are given. Analysis of the spectra obtained shows that the detector possesses good resolution equal to 29 keV at 77 K and 38 keV at helium temperature. It is concluded that spectrometric properties of Si detectors do not change at helium temperatures [ru

  10. Shaped detector

    International Nuclear Information System (INIS)

    Carlson, R.W.

    1981-01-01

    A radiation detector or detector array which has a non-constant spatial response, is disclosed individually and in combination with a tomographic scanner. The detector has a first dimension which is oriented parallel to the plane of the scan circle in the scanner. Along the first dimension, the detector is most responsive to radiation received along a centered segment of the dimension and less responsive to radiation received along edge segments. This non-constant spatial response can be achieved in a detector comprised of a scintillation crystal and a photoelectric transducer. The scintillation crystal in one embodiment is composed of three crystals arranged in layers, with the center crystal having the greatest light conversion efficiency. In another embodiment, the crystal is covered with a reflective substance around the center segment and a less reflective substance around the remainder. In another embodiment, an optical coupling which transmits light from adjacent the center segment with the greatest intensity couples the scintillation crystal and the photoelectric transducer. In yet another embodiment, the photoelectric transducer comprises three photodiodes, one receiving light produced adjacent the central segment and the other two receiving light produced adjacent the edge segments. The outputs of the three photodiodes are combined with a differential amplifier

  11. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    Energy Technology Data Exchange (ETDEWEB)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  12. Microwave detector

    Science.gov (United States)

    Meldner, H.W.; Cusson, R.Y.; Johnson, R.M.

    1985-02-08

    A microwave detector is provided for measuring the envelope shape of a microwave pulse comprised of high-frequency oscillations. A biased ferrite produces a magnetization field flux that links a B-dot loop. The magnetic field of the microwave pulse participates in the formation of the magnetization field flux. High-frequency insensitive means are provided for measuring electric voltage or current induced in the B-dot loop. The recorded output of the detector is proportional to the time derivative of the square of the envelope shape of the microwave pulse.

  13. Vertex detectors

    International Nuclear Information System (INIS)

    Lueth, V.

    1992-07-01

    The purpose of a vertex detector is to measure position and angles of charged particle tracks to sufficient precision so as to be able to separate tracks originating from decay vertices from those produced at the interaction vertex. Such measurements are interesting because they permit the detection of weakly decaying particles with lifetimes down to 10 -13 s, among them the τ lepton and charm and beauty hadrons. These two lectures are intended to introduce the reader to the different techniques for the detection of secondary vertices that have been developed over the past decades. The first lecture includes a brief introduction to the methods used to detect secondary vertices and to estimate particle lifetimes. It describes the traditional technologies, based on photographic recording in emulsions and on film of bubble chambers, and introduces fast electronic registration of signals derived from scintillating fibers, drift chambers and gaseous micro-strip chambers. The second lecture is devoted to solid state detectors. It begins with a brief introduction into semiconductor devices, and then describes the application of large arrays of strip and pixel diodes for charged particle tracking. These lectures can only serve as an introduction the topic of vertex detectors. Time and space do not allow for an in-depth coverage of many of the interesting aspects of vertex detector design and operation

  14. Smoke detectors

    International Nuclear Information System (INIS)

    Macdonald, E.

    1976-01-01

    A smoke detector is described consisting of a ventilated ionisation chamber having a number of electrodes and containing a radioactive source in the form of a foil supported on the surface of the electrodes. This electrode consists of a plastic material treated with graphite to render it electrically conductive. (U.K.)

  15. Investigation of the radiation damage of GaAs detectors by neutrons and photons

    Science.gov (United States)

    Braunschweig, W.; Kubicki, Th.; Lübelsmeyer, K.; Pandoulas, D.; Syben, O.; Tenbusch, F.; Toporowsky, M.; Wilms, Th.; Wittmer, B.; Xiao, W. J.

    1996-02-01

    Surface barrier particle detectors, processed in Aachen using SI GaAs from several manufacturers, have been irradiated with neutrons (peak energy ˜1 MeV) up to fluences of 4.0 × 10 14 n/cm 2 and with photons from a 60Co source with a dose of 100 Mrad. All detectors work well after the irradiation. Detectors biased with 200 V during the neutron irradiation show no significant difference from those not biased. After irradiation with 4.0 × 10 14 n/cm 2 the leakage currents at 200 V are a factor of 4 greater than those before irradiation. At the highest radiation level the signal for minimum ionizing particles corresponds to 7200 electrons (at 200 V bias voltage) independent of peaking times between 40 ns and 2.2 μs. The signals for α-particles (2.2 μs peaking time, 200 V bias voltage) are about 20% of those before irradiation. The exposure to the 100 Mrad photon dose caused little change of the detector performance. The leakage currents were even reduced by about 10%.

  16. The Mu3e Tile Detector

    Energy Technology Data Exchange (ETDEWEB)

    Eckert, Hans Patrick

    2015-05-06

    The Mu3e experiment is designed to search for the lepton flavour violating decay μ→e{sup +}e{sup +}e{sup -} with a sensitivity of one in 10{sup 16} decays. An observation of such a decay would be a clear sign of physics beyond the Standard Model. Achieving the targeted sensitivity requires a high precision detector with excellent momentum, vertex and time resolution. The Mu3e Tile Detector is a highly granular sub-detector system based on scintillator tiles with Silicon Photomultiplier (SiPM) readout, and aims at measuring the timing of the muon decay products with a resolution of better than 100 ps. This thesis describes the development of the Tile Detector concept and demonstrates the feasibility of the elaborated design. In this context, a comprehensive simulation framework has been developed, in order to study and optimise the detector performance. The central component of this framework is a detailed simulation of the SiPM response. The simulation model has been validated in several measurements and shows good agreement with the data. Furthermore, a 16-channel prototype of a Tile Detector module has been constructed and operated in an electron beam. In the beam tests, a time resolution up to 56 ps has been achieved, which surpasses the design goal. The simulation and measurement results demonstrate the feasibility of the developed Tile Detector design and show that the required detector performance can be achieved.

  17. Characterization of Si detectors, search for vertex and potentiality of detecting a light charged Higgs boson in the CMS experiment; Caracterisation des detecteurs silicium, recherche de Vertex et etude du potentiel de decouverte d'un boson de Higgs charge leger dans l'experience CMS

    Energy Technology Data Exchange (ETDEWEB)

    Estre, N

    2004-07-01

    The CMS (compact muon solenoid) detector that will be set on the future LHC (large hadron collider) accelerator will enable us to continue our search for the Higgs boson as well as to look for any hint for a new physics beyond the standard model. CMS is composed of an efficient muon detector, an electromagnetic calorimeter and of a tracker with high spatial resolution, this tracker is the topic of this thesis. The tracker will allow an accurate reconstruction of charged-particles trajectories and the reconstruction of the primary interaction vertex. The tracker's technology is based on micro-strip Si detectors, tests performed with the SPS particle beam show that these detectors have an impact reconstruction efficiency greater than 98% and a piling-up rate limited to 6%. The spatial resolution concerning particle trajectories is about 45 {mu}m for an interval of 183 {mu}m between 2 strips. The simulation for the search for a light charged Higgs boson show that an excess of {tau}{nu}{sub {tau}} + bb-bar + qq-bar' events is possible to be observed for any value of tan({beta}) up to M{sub A} = 122 GeV/c{sup 2} during the first year of operation and up to 136 GeV/c{sup 2} afterwards. With the assumption that this event excess is due to the decay of charged Higgs bosons we can state that the assessment of its mass will be possible till m{sub H} = 150 GeV/c{sup 2} with an accuracy of 15 GeV/c{sup 2}. (A.C.)

  18. Temperature effects on the electrical characteristics of Al/PTh−SiO2 ...

    Indian Academy of Sciences (India)

    2017-12-06

    Dec 6, 2017 ... The ideality factor of Al/PTh–SiO2/p-Si Schottky diodes has decreased with increasing temperature and the barrier height has increased with increasing temperature. The change in the barrier height and ideality factor values with temperature was attributed to inhomogeneties of the zero-bias barrier height.

  19. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.

    2007-07-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  20. Cadmium telluride photovoltaic radiation detector

    Science.gov (United States)

    Agouridis, D.C.; Fox, R.J.

    A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semi-conductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

  1. Design for measurement system of Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with the Ge detector

    International Nuclear Information System (INIS)

    Mori, Kazuteru; Uedono, Akira; Tanigawa, Shoichiro; Nakai, Katsuhiko

    1998-01-01

    The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski-(Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained. (author)

  2. Design for measurement system of Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with the Ge detector

    Energy Technology Data Exchange (ETDEWEB)

    Mori, Kazuteru; Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Nakai, Katsuhiko

    1998-08-01

    The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski-(Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained. (author)

  3. Neutron detector

    Science.gov (United States)

    Stephan, Andrew C [Knoxville, TN; Jardret,; Vincent, D [Powell, TN

    2011-04-05

    A neutron detector has a volume of neutron moderating material and a plurality of individual neutron sensing elements dispersed at selected locations throughout the moderator, and particularly arranged so that some of the detecting elements are closer to the surface of the moderator assembly and others are more deeply embedded. The arrangement captures some thermalized neutrons that might otherwise be scattered away from a single, centrally located detector element. Different geometrical arrangements may be used while preserving its fundamental characteristics. Different types of neutron sensing elements may be used, which may operate on any of a number of physical principles to perform the function of sensing a neutron, either by a capture or a scattering reaction, and converting that reaction to a detectable signal. High detection efficiency, an ability to acquire spectral information, and directional sensitivity may be obtained.

  4. Particle detectors

    CERN Document Server

    AUTHOR|(CDS)2068232

    1998-01-01

    The lecture series will present and overview of the basic techniques and underlying physical principles of particle detectors, applied to current and future high energy physics experiments. Illustrating examples, mainly from the field of collider experiments, will demonstrate the performance and limitations of the various techniques. After and introduction we shall concentrate on particle tracking. Wire chambers, drift chambers, micro gaseous tracking devices and solid state trackers will be discussed. It follows and overview of scintillators, photon detection, fiber tracking and nuclear emulsions. One lecture will deal with the various techniques of calorimetry. Finally we shall focus on methods developed for particle identification. These comprise specific energy loss, time of flight Cherenkov and transition radiation detectors.

  5. Silicon carbide detector for laser-generated plasma radiation

    Energy Technology Data Exchange (ETDEWEB)

    Bertuccio, Giuseppe, E-mail: Giuseppe.Bertuccio@polimi.it [Department of Electronics Engineering and Information Science, Politecnico di Milano, Como Campus, Via Anzani 42, 22100 Como (Italy); National Institute of Nuclear Physics, INFN sez. Milano, Via Celoria 16, 20133 Milano (Italy); Puglisi, Donatella [Department of Electronics Engineering and Information Science, Politecnico di Milano, Como Campus, Via Anzani 42, 22100 Como (Italy); National Institute of Nuclear Physics, INFN sez. Milano, Via Celoria 16, 20133 Milano (Italy); Torrisi, Lorenzo [Department of Physics, University of Messina, Ctr. Papardo 31, 98166 S. Agata, Messina (Italy); National Institute of Nuclear Physics, INFN-LNS, Via S. Sofia 62, 95123 Catania (Italy); Lanzieri, Claudio [Selex Sistemi Integrati S.p.A., Via Tiburtina km 12,400, 00131 Rome (Italy)

    2013-05-01

    We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emitted by laser generated plasmas. The detector has been employed in time of flight (TOF) configuration within an experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm{sup 2} area 100 nm thick circular Ni-SiC Schottky junction on a high purity 4H-SiC epitaxial layer 115 μm thick. Current signals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 Ω load resistance with excellent signal to noise ratios. Resolution of few nanoseconds has been experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC bias under extreme operating conditions with no observable performance degradation.

  6. Neutron radiation damage studies on silicon detectors

    International Nuclear Information System (INIS)

    Li, Zheng; Chen, W.; Kraner, H.W.

    1990-10-01

    Effects of neutron radiation on electrical properties of Si detectors have been studied. At high neutron fluence (Φ n ≥ 10 12 n/cm 2 ), C-V characteristics of detectors with high resistivities (ρ ≥ 1 kΩ-cm) become frequency dependent. A two-trap level model describing this frequency dependent effect is proposed. Room temperature anneal of neutron damaged (at LN 2 temperature) detectors shows three anneal stages, while only two anneal stages were observed in elevated temperature anneal. 19 refs., 14 figs

  7. Two-color infrared detector

    Science.gov (United States)

    Klem, John F; Kim, Jin K

    2014-05-13

    A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins the first absorber layer at a first interface. The barrier layer exhibits a second valence band energy characterized by a second valence band energy function. The barrier layer also adjoins a second absorber layer at a second interface. The second absorber layer exhibits a third valence band energy characterized by a third valence band energy function. The first and second valence band energy functions are substantially functionally or physically continuous at the first interface and the second and third valence band energy functions are substantially functionally or physically continuous at the second interface.

  8. Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

    International Nuclear Information System (INIS)

    Kling, A.; Ortiz, M.I.; Prieto, A.C.; Rodriguez, A.; Rodriguez, T.; Jimenez, J.; Ballesteros, C.; Soares, J.C.

    2006-01-01

    Nanomemories, containing Ge-nanoparticles in a SiO 2 matrix, can be produced by dry thermal oxidation of a SiGe layer deposited onto a Si-wafer with a barrier SiO 2 layer on its top. Rutherford backscattering spectrometry has been used to characterize the kinetics of the oxidation process, the composition profile of the growing oxide, the Ge-segregation and its diffusion into the barrier oxide in samples with thin and thick barrier oxide layers. The Ge segregated during the oxidation of the SiGe layer diffuses into the barrier oxide. In the first case the diffusion through the thin oxide is enhanced by the proximity of the substrate that acts as a sink for the Ge, resulting in the formation of a low Ge concentration SiGe layer in the surface of the Si-wafer. In the second case, the Ge-diffusion progresses as slowly as in bulk SiO 2 . Since barrier oxide layers as thin as possible are favoured for device fabrication, the structures should be oxidized at lower temperatures and the initial SiGe layer thickness reduced to minimize the Ge-diffusion

  9. Encapsulated scintillation detector

    International Nuclear Information System (INIS)

    Toepke, I.L.

    1982-01-01

    A scintillation detector crystal is encapsulated in a hermetically sealed housing having a glass window. The window may be mounted in a ring by a compression seal formed during cooling of the ring and window after heating. The window may be chemically bonded to the ring with or without a compression seal. The ring is welded to the housing along thin weld flanges to reduce the amount of weld heat which must be applied. A thin section is provided to resist the flow of welding heat to the seal between the ring and the window thereby forming a thermal barrier. The thin section may be provided by a groove cut partially through the wall of the ring. A layer of PTFE between the tubular body and the crystal minimizes friction created by thermal expansion. Spring washers urge the crystal towards the window. (author)

  10. Fast-timing methods for semiconductor detectors

    International Nuclear Information System (INIS)

    Spieler, H.

    1982-03-01

    The basic parameters are discussed which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

  11. Fast timing methods for semiconductor detectors. Revision

    International Nuclear Information System (INIS)

    Spieler, H.

    1984-10-01

    This tutorial paper discusses the basic parameters which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

  12. Waveguide-Coupled Superconducting Nanowire Single-Photon Detectors

    Science.gov (United States)

    Beyer, Andrew D.; Briggs, Ryan M.; Marsili, Francesco; Cohen, Justin D.; Meenehan, Sean M.; Painter, Oskar J.; Shaw, Matthew D.

    2015-01-01

    We have demonstrated WSi-based superconducting nanowire single-photon detectors coupled to SiNx waveguides with integrated ring resonators. This photonics platform enables the implementation of robust and efficient photon-counting detectors with fine spectral resolution near 1550 nm.

  13. The vertex detector for the Lepton/Photon collaboration

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, J.P.; Boissevain, J.G.; Fox, D.; Hecke, H. van; Jacak, B.V.; Kapustinsky, J.S.; Leitch, M.J.; McGaughey, P.L.; Moss, J.M.; Sondheim, W.E. [Los Alamos National Lab., NM (United States)

    1991-12-31

    The conceptual design of the vertex detector for the Lepton/Photon Collaboration at RHIC is described, including simulations of its expected performance. The design consists of two con- centric layers of single-sided Si strips. The expected performance as a multiplicity detector and in measuring the pseudo-rapidity ({nu}) distribution is discussed as well as the expected vertex finding efficiency and accuracy. Various options which could be used to reduce the cost of the detector are also discussed.

  14. The vertex detector for the Lepton/Photon Collaboration

    International Nuclear Information System (INIS)

    Sullivan, J.P.; Boissevain, J.G.; Fox, D.; van Hecke, H.; Jacak, B.V.; Kapustinsky, J.S.; Leitch, M.J.; McGaughey, P.L.; Moss, J.M.; Sondheim, W.E.

    1991-01-01

    The conceptual design of the vertex detector for the Lepton/Photon Collaboration at RHIC is described, including simulations of its expected performance. The design consists of two concentric layers of single-sided Si strips. The expected performance as a multiplicity detector and in measuring the pseudo-rapidity η distribution is discussed as well as the expected vertex finding efficiency and accuracy. Various options which could be used to reduce the cost of the detector are also discussed

  15. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Science.gov (United States)

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2018-02-01

    As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  16. Barrier Systems

    NARCIS (Netherlands)

    Heteren, S. van

    2015-01-01

    Barrier-system dynamics are a function of antecedent topography and substrate lithology, Relative sea-level (RSL) changes, sediment availability and type, climate, vegetation type and cover, and various aero- and hydrodynamic processes during fair-weather conditions and extreme events. Global change

  17. Sea sand for reactive barriers

    International Nuclear Information System (INIS)

    Garcia R, G.; Ordonez R, E.; Ordonez R, En.

    2002-01-01

    Some phosphates have the property to suck in radioactive metals in solution, what it is taken in advance to make reactive barriers which are placed in the nuclear waste repositories. In an effort for contributing to the study of this type of materials, it has been obtained the zirconium silicate (ZrSiO 4 ) and the alpha zirconium hydrogen phosphate (Zr(HPO 4 ) 2H 2 O) starting from sea sand in an easy and economic way. (Author)

  18. High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.

    1991-11-01

    Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

  19. SiPM's for particle detection

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Gamal [Stefan Meyer Institute, Austrian Academy of Sciences, Boltzmanngasse 3, 1090 Vienna (Austria); Al-Azhar University, Faculty of Science, Physics Department, 11884, Cairo (Egypt); Buehler, Paul; Marton, Johann; Suzuki, Ken [Stefan Meyer Institute, Austrian Academy of Sciences, Boltzmanngasse 3, 1090 Vienna (Austria)

    2011-07-01

    Particle identification (PID) for hadrons and leptons over a large range of solid angle and momenta is an essential requirement for physics objectives of the PANDA detector. The solenoid in the target spectrometer produces a magnetic field of B{approx}2T necessary for momentum resolution of the tracking detectors. PID in the barrel section of the target, spectrometer has to work in this strong magnetic field within the solenoid, since it is surrounded by an electromagnetic calorimeter, it cannot take too much radial space. Readout of promptly emitted Cherenkov light with SiPM is a promising combination, with advantages like compactness, magnetic field resistance; simple operation and fast timing make SiPM an excellent candidate. The detection of momenta up to several GeV/c can be performed by the Detection of Internally Reflected Cherenkov (DIRC) light. The PANDA detector will feature two DIRC detectors, a DIRC in barrel geometry surrounding the target region, and a disc DIRC in the forward region. SiPM's with a sensitive area of 3mm x 3mm are on the market. We discuss here SiPM's timing performance characteristics and dependence of the operation conditions measurements performed at Stefan Meyer Institute. The single photoelectron time resolution results are also presented.

  20. Department of Radiation Detectors: Overview

    International Nuclear Information System (INIS)

    Piekoszewski, J.

    1998-01-01

    (full text) Work carried out in 1997 in the Department of Radiation Detectors concentrated on three subjects: (i) Semiconductor Detectors (ii) X-ray Tube Generators (iii) Material Modification using Ion and Plasma Beams. Semiconductor detectors: Semiconductor detectors of ionizing radiation are among the basic tools utilized in such fields of research and industry as nuclear physics, high energy physics, medical (oncology) radiotherapy, radiological protection, environmental monitoring, energy dispersive X-ray fluorescence non-destructive analysis of chemical composition, nuclear power industry. The Department all objectives are: - search for new types of detectors, - adapting modern technologies (especially of industrial microelectronics) to detector manufacturing, - producing unique detectors tailored for physics experiments, - manufacturing standard detectors for radiation measuring instruments, - scientific development of the staff. These 1997 objectives were accomplished particularly by: - research on unique detectors for nuclear physics (e.g. transmission type Si(Li) detectors with extremely thin entrance and exit window), - development of technology of high-resistivity (HRSi) silicon detectors and thermoelectric cooling systems (KBN grant), - study of the applicability of industrial planar technology in producing detectors, - manufacturing detectors developed in previous years, re-generating and servicing customer detectors of various origin. In accomplishing of the above, the Department cooperated with interested groups of physicists from our Institute (P-I and P-II Departments), Warsaw University, Warsaw Heavy Ion Laboratory and with some technology Institutes based in Warsaw (ITME, ITE). Some detectors and services have been delivered to customers on a commercial basis. X-Rat tube generators: The Department conducts research on design and technology of producing X-ray generators based on X-ray tubes of special construction. In 1997, work on a special

  1. Particle detectors

    CERN Document Server

    Hilke, Hans Jürgen; Joram, Christian; CERN. Geneva

    1991-01-01

    Lecture 5: Detector characteristics: ALEPH Experiment cut through the devices and events - Discuss the principles of the main techniques applied to particle detection ( including front-end electronics), the construction and performance of some of the devices presently in operartion and a few ideas on the future performance. Lecture 4-pt. b Following the Scintillators. Lecture 4-pt. a : Scintillators - Used for: -Timing (TOF, Trigger) - Energy Measurement (Calorimeters) - Tracking (Fibres) Basic scintillation processes- Inorganic Scintillators - Organic Scintil - Discuss the principles of the main techniques applied to particle detection ( including front-end electronics), the construction and performance of some of the devices presently in operation and a fiew ideas on future developpement session 3 - part. b Following Calorimeters lecture 3-pt. a Calorimeters - determine energy E by total absorption of charged or neutral particles - fraction of E is transformed into measurable quantities - try to acheive sig...

  2. Smoke detectors

    International Nuclear Information System (INIS)

    Bryant, J.

    1979-01-01

    An ionization smoke detector consisting of two electrodes defining an ionization chamber permitting entry of smoke, a radioactive source to ionize gas in the chamber and a potential difference applied across the first and second electrodes to cause an ion current to flow is described. The current is affected by entry of smoke. An auxiliary electrode is positioned in the ionization chamber between the first and second electrodes, and it is arranged to maintain or create a potential difference between the first electrode and the auxiliary electrode. The auxiliary electrode may be used for testing or for adjustment of sensitivity. A collector electrode divides the chamber into two regions with the auxiliary electrode in the outer sensing region. (U.K.)

  3. MUST, a set of strip detectors for studying radioactive beams induced reactions

    International Nuclear Information System (INIS)

    Blumenfeld, Y.; Barbier, A.; Beaumel, D.; Charlet, D.; Clavelin, J.F.; Douet, R.; Engrand, M.; Lebon, S.; Lelong, P.; Lesage, A.; Leven, V.; Lhenry, I.; Marechal, F.; Petizon, L.; Pouthas, J.; Richard, A.; Rougier, D.; Soulet, C.; Suomijaervi, T.; Volkov, P.; Voltolini, G.

    1996-01-01

    This report states the specificity of light particles elastic scattering, and the need of detecting recoil protons to improve angular resolution. Then the development of a specific MUST strip detector is detailed: 60 strips detectors with Si O sub 2 dielectric, that yield 500 ps time resolution, and Si (Li) detectors following next. A versatile data acquisition system has been developed too, with CAMAC interface to suit to any experimental plant. (D.L.)

  4. State of the art timing in TOF-PET detectors with LuAG, GAGG and L(Y)SO scintillators of various sizes coupled to FBK-SiPMs

    CERN Document Server

    Gundacker, S.; Auffray, E.; Ferri, A.; Gola, A.; Nemallapudi, M.V.; Paternoster, G.; Piemonte, C.; Lecoq, P.

    2016-01-01

    Time of flight (TOF) in positron emission tomography (PET) has experienced a revival of interest after its first introduction in the eighties. This is due to a significant progress in solid state photodetectors (SiPMs) and newly developed scintillators (LSO and its derivatives). Latest developments at Fondazione Bruno Kessler (FBK) lead to the NUV-HD SiPM with a very high photon detection efficiency of around 55%. Despite the large area of 4×4 mm2 it achieves a good single photon time resolution (SPTR) of 180±5ps FWHM. Coincidence time resolution (CTR) measurements using LSO:Ce codoped with Ca scintillators yield best values of 73±2ps FWHM for 2×2×3 mm3 and 117±3ps for 2×2×20 mm3 crystal sizes. Increasing the crystal cross-section from 2×2 mm2 to 3×3 mm2 a non negligible CTR deterioration of approximately 7ps FWHM is observed. Measurements with LSO:Ce codoped Ca and LYSO:Ce scintillators with various cross-sections (1×1 mm2 - 4×4 mm2) and lengths (3mm - 30mm) will be a basis for discussing on how ...

  5. Processing of Radiation Hard Particle Detectors on Czochralski Silicon

    CERN Document Server

    Tuovinen, Esa

    2012-01-01

    The purpose of this work was to study the radiation hardness of particle detectors. Silicon detectors are cost-effective andhave an excellent spatial resolution. Therefore, they are widely used in many high-energy physics experiments. It is knownthat oxygen improves the radiation hardness of silicon detectors. The natural way to have a high concentration of oxygen insilicon is to use magnetic Czochralski silicon (MCz-Si). MCz-Si has intrinsically a relatively uniform and high level ofoxygen (5x10^17 cm^3) compared to regular float-zone silicon (FZ-Si). Such a level is hard to attain with other methods,namely the diffusion oxygenation of float-zone silicon.In the Large Hadron Collider (LHC) and its potential upgrade, the luminosity and the fluencies of fast hadrons can be sohigh that detectors made of standard detector-grade FZ-Si might not survive the planned operating period. MCz-Si offers animprovement to the lifetime of particle detectors through improved radiation hardness.This thesis takes a process-orie...

  6. Towards time-of-flight PET with a semiconductor detector

    Science.gov (United States)

    Ariño-Estrada, Gerard; Mitchell, Gregory S.; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.; Cherry, Simon R.

    2018-02-01

    The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

  7. Towards time-of-flight PET with a semiconductor detector.

    Science.gov (United States)

    Ariño-Estrada, Gerard; Mitchell, Gregory S; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J; Shah, Kanai S; Cherry, Simon R

    2018-02-16

    The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

  8. Detector Simulations with DD4hep

    Science.gov (United States)

    Petrič, M.; Frank, M.; Gaede, F.; Lu, S.; Nikiforou, N.; Sailer, A.

    2017-10-01

    Detector description is a key component of detector design studies, test beam analyses, and most of particle physics experiments that require the simulation of more and more different detector geometries and event types. This paper describes DD4hep, which is an easy-to-use yet flexible and powerful detector description framework that can be used for detector simulation and also extended to specific needs for a particular working environment. Linear collider detector concepts ILD, SiD and CLICdp as well as detector development collaborations CALICE and FCal have chosen to adopt the DD4hep geometry framework and its DDG4 pathway to Geant4 as its core simulation and reconstruction tools. The DDG4 plugins suite includes a wide variety of input formats, provides access to the Geant4 particle gun or general particles source and allows for handling of Monte Carlo truth information, eg. by linking hits and the primary particle that caused them, which is indispensable for performance and efficiency studies. An extendable array of segmentations and sensitive detectors allows the simulation of a wide variety of detector technologies. This paper shows how DD4hep allows to perform complex Geant4 detector simulations without compiling a single line of additional code by providing a palette of sub-detector components that can be combined and configured via compact XML files. Simulation is controlled either completely via the command line or via simple Python steering files interpreted by a Python executable. It also discusses how additional plugins and extensions can be created to increase the functionality.

  9. CLIC Detector Power Requirements

    CERN Document Server

    Gaddi, A

    2013-01-01

    An estimate for the CLIC detector power requirements is outlined starting from the available data on power consumptions of the four LHC experiments and considering the differences between a typical LHC Detector (CMS) and the CLIC baseline detector concept. In particular the impact of the power pulsing scheme for the CLIC Detector electronics on the overall detector consumption is considered. The document will be updated with the requirements of the sub-detector electronics once they are more defined.

  10. Calibration of detector efficiency of neutron detector

    International Nuclear Information System (INIS)

    Guo Hongsheng; He Xijun; Xu Rongkun; Peng Taiping

    2001-01-01

    BF 3 neutron detector has been set up. Detector efficiency is calibrated by associated particle technique. It is about 3.17 x 10 -4 (1 +- 18%). Neutron yield of neutron generator per pulse (10 7 /pulse) is measured by using the detector

  11. Characterization of silicon carbide and diamond detectors for neutron applications

    Science.gov (United States)

    Hodgson, M.; Lohstroh, A.; Sellin, P.; Thomas, D.

    2017-10-01

    The presence of carbon atoms in silicon carbide and diamond makes these materials ideal candidates for direct fast neutron detectors. Furthermore the low atomic number, strong covalent bonds, high displacement energies, wide bandgap and low intrinsic carrier concentrations make these semiconductor detectors potentially suitable for applications where rugged, high-temperature, low-gamma-sensitivity detectors are required, such as active interrogation, electronic personal neutron dosimetry and harsh environment detectors. A thorough direct performance comparison of the detection capabilities of semi-insulating silicon carbide (SiC-SI), single crystal diamond (D-SC), polycrystalline diamond (D-PC) and a self-biased epitaxial silicon carbide (SiC-EP) detector has been conducted and benchmarked against a commercial silicon PIN (Si-PIN) diode, in a wide range of alpha (Am-241), beta (Sr/Y-90), ionizing photon (65 keV to 1332 keV) and neutron radiation fields (including 1.2 MeV to 16.5 MeV mono-energetic neutrons, as well as neutrons from AmBe and Cf-252 sources). All detectors were shown to be able to directly detect and distinguish both the different radiation types and energies by using a simple energy threshold discrimination method. The SiC devices demonstrated the best neutron energy discrimination ratio (E\\max (n=5 MeV)/E\\max (n=1 MeV)  ≈5), whereas a superior neutron/photon cross-sensitivity ratio was observed in the D-PC detector (E\\max (AmBe)/E\\max (Co-60)  ≈16). Further work also demonstrated that the cross-sensitivity ratios can be improved through use of a simple proton-recoil conversion layer. Stability issues were also observed in the D-SC, D-PC and SiC-SI detectors while under irradiation, namely a change of energy peak position and/or count rate with time (often referred to as the polarization effect). This phenomenon within the detectors was non-debilitating over the time period tested (> 5 h) and, as such, stable operation was

  12. Development of Large Cryogenic Semiconductor Detectors

    International Nuclear Information System (INIS)

    Mandic, Vuk

    2016-01-01

    This project aims at developing large cryogenic semiconductor detectors for applications in particle physics and more broadly. We have developed a 150 mm diameter, 43 mm thick, Si-based detector that measures ionization released in an interaction of a particle inside the silicon crystal of high purity, operated at 30 mK temperature. We demonstrated that such a detector can be used to measure recoil energies on the keV scale, and that its stable operation can be maintained indefinitely. Detectors of this type could therefore be used in the fields of direct dark matter searches, coherent neutrino scattering measurements, X-ray observations, as well as in broader applications such as homeland security.

  13. Stopping power measurements for {sup 16}O, {sup 19}F and {sup 28}Si ions in Mylar by a transmission technique

    Energy Technology Data Exchange (ETDEWEB)

    Chekirine, M., E-mail: chekirine_mamoun@yahoo.fr [Departement de physique, Faculte des sciences, Universite Saad Dahleb, B.P. 270, route de Soumaa, Blida (Algeria); Ammi, H., E-mail: hakim_ammi@yahoo.fr [Centre de Recherche Nucleaire d' Alger, 2, Bd. Frantz Fanon, B.P. 399, Alger-Gare (Algeria); Choudhury, R.K.; Biswas, D.C. [Bhabha Atomic Research Centre, Nuclear Physics Division, Mumbai (India); Tobbeche, S., E-mail: said_tobbeche@yahoo.com [Faculte des sciences, Universite El-Hadj Lakhdar, Batna 05000 (Algeria)

    2011-12-15

    Electronic energy loss of charged particles in materials is a fundamental process responsible for the unique response of materials in applications of advanced nuclear power, radiation detectors and advanced processing of electronic devices. In this study, stopping powers of {sup 16}O, {sup 19}F and {sup 28}Si heavy ions crossing thin Mylar foils have been determined in transmission geometry. The energy loss was measured over a continuous range of energies from 1.6 to 5.5 MeV/n (MeV per nucleon) using the data that was tagged by a surface barrier detector (SBD) with and without stopping foils. We have compared the obtained stopping values to those predicted by SRIM-2008 computer code, ICRU-73 stopping data tables and MSTAR calculations. The effective charge values of these heavy ions have been also deduced from the experimental set of data.

  14. GaAs strip detectors: the Australian production program

    International Nuclear Information System (INIS)

    Butcher, K.S.A.; Alexiev, D.

    1995-01-01

    The Australian High Energy Physics consortium (composed of the University of Melbourne, the University of Sydney and ANSTO) has been investigating the possibility of producing a large area wheel of SI GaAs detectors for the ATLAS detector array. To help assess the extent of Australia's role in this venture a few SI GaAs microstrip detectors are to be manufactured under contract by the CSIRO division of Radiophysics GaAs IC Prototyping Facility. The planned production of the devices is discussed. First, the reasons for producing the detectors here in Australia are examined, then some basic characteristics of the material are considered, and finally details are provided of the design used for the manufacture of the devices. Two sets of detectors will be produced using the standard Glasgow production recipe; SIGaAs and GaN. The Glasgow mask set is being used as a benchmark against which to compare the Australian devices

  15. MUON DETECTOR

    CERN Multimedia

    F. Gasparini

    DT As announced in the previous Bulletin MU DT completed the installation of the vertical chambers of barrel wheels 0, +1 and +2. 242 DT and RPC stations are now installed in the negative barrel wheels. The missing 8 (4 in YB-1 and 4 in YB-2) chambers can be installed only after the lowering of the two wheels into the UX cavern, which is planned for the last quarter of the year. Cabling on the surface of the negative wheels was finished in May after some difficulties with RPC cables. The next step was to begin the final commissioning of the wheels with the final trigger and readout electronics. Priority was giv¬en to YB0 in order to check everything before the chambers were covered by cables and services of the inner detectors. Commissioning is not easy since it requires both activity on the central and positive wheels underground, as well as on the negative wheels still on the surface. The DT community is requested to commission the negative wheels on surface to cope with a possible lack of time a...

  16. An annular ionization detector for quasi-elastic and transfer reaction studies

    CERN Document Server

    Dinesh, B V; Nayak, B K; Biswas, D C; Saxena, A; Pant, L M; Sahu, P K; Choudhury, R K

    2000-01-01

    An annular ionization chamber detector has been developed to study quasi-elastic and transfer reactions in heavy-ion collisions at near-barrier and sub-barrier energies. The important feature of the detector is that it has a near 2 pi coverage in the azimuthal angle phi for the particles entering in the detector at a given theta direction. This feature makes the detector very useful for measurement of the differential cross-sections at backward angles with respect to the beam direction, involving low cross-section reaction channels. The split anode configuration of the detector makes it capable of both particle identification and energy measurement for heavy ions and fission fragments. The detector has been tested using heavy-ion beams from the 14 MV-pelletron accelerator at Mumbai. Results on quasi-elastic excitation function measurements and barrier distribution studies in many heavy-ion reactions using this detector setup are discussed.

  17. Material Analysis of Coated Siliconized Silicon Carbide (SiSiC Honeycomb Structures for Thermochemical Hydrogen Production

    Directory of Open Access Journals (Sweden)

    Robert Pitz-Paal

    2013-01-01

    Full Text Available In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD and Scanning Electron Microscopy (SEM with corresponding micro analysis after testing in order to characterize the changes in morphology and composition. Comparison of several treated monoliths revealed the formation of various reaction products such as SiO2, zircon (ZrSiO4, iron silicide (FeSi and hercynite (FeAl2O4 indicating the occurrence of various side reactions between the different phases of the coating as well as between the coating and the SiSiC substrate. The investigations showed that the ferrite is mainly reduced through reaction with silicon (Si, which is present in the SiSiC matrix, and silicon carbide (SiC. These results led to the formulation of a new redox mechanism for this system in which Zn-ferrite is reduced through Si forming silicon dioxide (SiO2 and through SiC forming SiO2 and carbon monoxide. A decline of hydrogen production within the first 20 cycles is suggested to be due to the growth of a silicon dioxide and zircon layer which acts as a diffusion barrier for the reacting specie.

  18. Detector simulation needs for detector designers

    Energy Technology Data Exchange (ETDEWEB)

    Hanson, G.G.

    1987-11-01

    Computer simulation of the components of SSC detectors and of the complete detectors will be very important for the designs of the detectors. The ratio of events from interesting physics to events from background processes is very low, so detailed understanding of detector response to the backgrounds is needed. Any large detector for the SSC will be very complex and expensive and every effort must be made to design detectors which will have excellent performance and will not have to undergo major rebuilding. Some areas in which computer simulation is particularly needed are pattern recognition in tracking detectors and development of shower simulation code which can be trusted as an aid in the design and optimization of calorimeters, including their electron identification performance. Existing codes require too much computer time to be practical and need to be compared with test beam data at energies of several hundred GeV. Computer simulation of the processing of the data, including electronics response to the signals from the detector components, processing of the data by microprocessors on the detector, the trigger, and data acquisition will be required. In this report we discuss the detector simulation needs for detector designers.

  19. Muon System Design Studies for Detectors at CLIC

    CERN Document Server

    van der Kraaij, E

    2011-01-01

    The two concepts for CLIC detectors inherited their design of the muon systems from the ILC community. In this note the outcome of a reevaluation of the design for the CLIC environment is presented. Based on a full detector simulation, the muon identification performance is analysed for different detector layouts and different cellsizes. As a result, nine layers are suggested for the muon systems of the CLIC ILD and CLIC SiD detectors, which are arranged in three groups of three layers. The cellsizes have been kept at 30×30 mm2. These layouts are used for the performance studies of the CLIC Conceptual Design Report (CDR).

  20. Silicon radiation detectors: materials and applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Haller, E.E.

    1982-10-01

    Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

  1. Permeability Barrier Generation in the Martian Lithosphere

    Science.gov (United States)

    Schools, Joe; Montési, Laurent

    2015-11-01

    Permeability barriers develop when a magma produced in the interior of a planet rises into the cooler lithosphere and crystallizes more rapidly than the lithosphere can deform (Sparks and Parmentier, 1991). Crystallization products may then clog the porous network in which melt is propagating, reducing the permeability to almost zero, i.e., forming a permeability barrier. Subsequent melts cannot cross the barrier. Permeability barriers have been useful to explain variations in crustal thickness at mid-ocean ridges on Earth (Magde et al., 1997; Hebert and Montési, 2011; Montési et al., 2011). We explore here under what conditions permeability barriers may form on Mars.We use the MELTS thermodynamic calculator (Ghiorso and Sack, 1995; Ghiorso et al., 2002; Asimow et al., 2004) in conjunction with estimated Martian mantle compositions (Morgan and Anders, 1979; Wänke and Dreibus, 1994; Lodders and Fegley, 1997; Sanloup et al., 1999; Taylor 2013) to model the formation of permeability barriers in the lithosphere of Mars. In order to represent potential past and present conditions of Mars, we vary the lithospheric thickness, mantle potential temperature (heat flux), oxygen fugacity, and water content.Our results show that permeability layers can develop in the thermal boundary layer of the simulated Martian lithosphere if the mantle potential temperature is higher than ~1500°C. The various Martian mantle compositions yield barriers in the same locations, under matching variable conditions. There is no significant difference in barrier location over the range of accepted Martian oxygen fugacity values. Water content is the most significant influence on barrier development as it reduces the temperature of crystallization, allowing melt to rise further into the lithosphere. Our lower temperature and thicker lithosphere model runs, which are likely the most similar to modern Mars, show no permeability barrier generation. Losing the possibility of having a permeability

  2. Detector simulations with DD4hep

    CERN Document Server

    AUTHOR|(SzGeCERN)668365; Frank, Markus; Gaede, Frank-Dieter; Lu, Shaojun; Nikiforou, Nikiforos; Sailer, Andre

    2017-01-01

    Detector description is a key component of detector design studies, test beam analyses, and most of particle physics experiments that require the simulation of more and more different detector geometries and event types. This paper describes DD4hep, which is an easy-to-use yet flexible and powerful detector description framework that can be used for detector simulation and also extended to specific needs for a particular working environment. Linear collider detector concepts ILD, SiD and CLICdp as well as detector development collaborations CALICE and FCal have chosen to adopt the DD4hep geometry framework and its DDG4 pathway to Geant4 as its core simulation and reconstruction tools. The DDG4 plugins suite includes a wide variety of input formats, provides access to the Geant4 particle gun or general particles source and allows for handling of Monte Carlo truth information, e.g. by linking hits and the primary particle that caused them, which is indispensable for performance and efficiency studies. An extend...

  3. Photon response of silicon diode neutron detectors

    International Nuclear Information System (INIS)

    McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.

    1976-07-01

    The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed

  4. The GRANDE detector

    International Nuclear Information System (INIS)

    Adams, A.; Bond, R.; Coleman, L.; Rollefson, A.; Wold, D.; Bratton, C.B.; Gurr, H.; Kropp, W.; Nelson, M.; Price, L.R.; Reines, F.; Schultz, J.; Sobel, H.; Svoboda, R.; Yodh, G.; Burnett, T.; Chaloupka, V.; Wilkes, R.J.; Cherry, M.; Ellison, S.B.; Guzik, T.G.; Wefel, J.; Gaidos, J.; Loeffler, F.; Sembroski, G.; Wilson, C.; Goodman, J.; Haines, T.J.; Kielczewska, D.; Lane, C.; Steinberg, R.; Lieber, M.; Nagle, D.; Potter, M.; Tripp, R.

    1990-01-01

    In this paper we present a detector facility which meets the requirements outlined above for a next-generation instrument. GRANDE (Gamma Ray and Neutrino DEtector) is an imaging, water Cerenkov detector, which combines in one facility an extensive air shower array and a high-energy neutrino detector. (orig.)

  5. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  6. SuperCDMS Underground Detector Fabrication Facility

    Energy Technology Data Exchange (ETDEWEB)

    Platt, M.; Mahapatra, R.; Bunker, Raymond A.; Orrell, John L.

    2018-03-01

    The SuperCDMS SNOLAB dark matter experiment processes Ge and Si crystals into fully tested phonon and ionization detectors at surface fabrication and test facilities. If not mitigated, it is anticipated that trace-level production of radioisotopes in the crystals due to exposure to cosmic rays at (or above) sea level will result in the dominant source of background events in future dark matter searches using the current SuperCDMS detector technology. Fabrication and testing of detectors in underground facilities shielded from cosmic radiation is one way to directly reduce production of trace levels of radioisotopes, thereby improving experimental sensitivity for the discovery of dark matter beyond the level of the current experiment. In this report, we investigate the cost and feasibility to establish a complete detector fabrication processing chain in an underground location to mitigate cosmogenic activation of the Ge and Si detector substrates. For a specific and concrete evaluation, we explore options for such a facility located at SNOLAB, an underground laboratory in Sudbury, Canada hosting the current and future experimental phases of SuperCDMS.

  7. Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Loh Ter-Hoe

    2007-01-01

    Full Text Available AbstractSi/Si0.66Ge0.34coupled quantum well (CQW structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD system. The samples were characterized using high resolution x-ray diffraction (HRXRD, cross-sectional transmission electron microscopy (XTEM and photoluminescence (PL spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

  8. A new concept of monolithic silicon pixel detectors Hydrogenated amorphous silicon on ASIC

    CERN Document Server

    Anelli, G; Despeisse, M; Dissertori, G; Jarron, P; Miazza, C; Moraes, D; Shah, A; Viertel, Gert M; Wyrsch, N

    2004-01-01

    A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC) . For almost 20 years, several research groups tried to demonstrate that a-Si:H material could be used to build radiation detectors for particle physics applications. A novel approach is made by the deposition of a-Si:H directly on the readout ASIC. This technique is similar to the concept of monolithic pixel detectors, but offers considerable advantages. We present first results from tests of a n- i-p a-Si:H diode array deposited on a glass substrate and on the a- Si:H above ASIC prototype detector.

  9. Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

    Science.gov (United States)

    Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

    2018-02-01

    The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

  10. Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x

    Science.gov (United States)

    Kim, Sungjun; Chang, Yao-Feng; Kim, Min-Hwi; Park, Byung-Gook

    2017-07-01

    This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiNx/p++-Si resistive memory devices by simply tuning x. A Ni/SiN1.07/p++-Si device showed lower power switching (20 μW) and better endurance cycles (103) compared to a Ni/SiN0.82/p++-Si device because of the improved negative set behavior and initially lower set and reset currents. In addition, we achieved fast switching speed for set (200 ns) and reset (100 ns) processes in the Ni/SiN1.07/p++-Si device. For the Ni/SiN1.07/p++-Si device, fine adjustment of resistance values is attainable by varying the pulse amplitude and width due to the gradual reset switching characteristics. The barrier-height-dependent conduction model is proposed to explain the change in the current level with the x value.

  11. Improved performance thermal barrier coatings

    International Nuclear Information System (INIS)

    Levine, S.R.; Miller, R.A.; Stecura, S.

    1983-01-01

    Thermal barrier coatings offer an attractive approach to improving the durability and efficiency of the hot section of heat engines. The coatings typically consist of an inner alloy bond coating about 0.01 cm thick resistant to oxidation and hot corrosion and an outer ceramic layer, usually a stabilized zirconia, 0.01-0.05 cm thick. Here, the materials, thermomechanical stress, and hot corrosion problems associated with thermal barrier coatings are reviewed along with the capabilities and limitations of current technology. The coatings discussed include ZrO2-Y2O3/NiCrAlY, ZrO2-Y2O3/NiCoCrAlY, ZrO2-MgO/NiCoCrAlY, CaO-SiO2/Co-Cr-Al-Y, and CaO-SiO2/NiCrAlY systems. It is emphasized that the performance of thermal barrier coatings is governed by many complex and interrelated factors, so that optimization of these coatings always involves certain tradeoffs. 27 references

  12. Array detector for neutron pre-emission investigations

    International Nuclear Information System (INIS)

    Petrascu, M.; Cruceru, I.; Isbasescu, A.; Petrascu, H.; Ruscu, R.; Tanihata, I.; Morimoto, K.; Giurgiu, M.; Constantinescu, A.; Bordeanu, C.

    2001-01-01

    The array detector built within the cooperation agreement between the Institute of Physics and Nuclear Engineering, Romania, and RIKEN, Japan, is described. The design and expected characteristics of this detector are presented. This detector was recently used in an experiment performed at the RIKEN-RIPS facility for investigation of neutron pair pre-emission, in the fusion of 11 Li halo nuclei with Si targets (see the abstract in the present progress report and also our RIKEN Report of April 2001. A single neutron spectrum measured in Si( 11 Li, fusion), by using the number 1 to 9 detectors of the array is shown. The energy range (12.2 ∼ 14.2) MeV of the 11 Li incoming beam was selected. The first limit corresponds to the energy loss of the 12.2 MeV incoming beam into the 0.5 mm thick Si target-detector. It was found that the main contribution to the spectrum within the (9-14) MeV neutron energy range is due to the pre-emission effect. It is to be underlined that the incoming beam is almost uniformly distributed within the (12.2 ∼ 14.2) MeV energy range. The neutron array detector built within the cooperation agreement between the NIPNE, Romania and RIKEN, Japan, consists of 81 detectors made of 4 x 4 x 12 cm 3 BC-400 crystals, mounted on XP2972 phototubes. (authors)

  13. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.

    Science.gov (United States)

    Lin, Yung-Chen; Lu, Kuo-Chang; Wu, Wen-Wei; Bai, Jingwei; Chen, Lih J; Tu, K N; Huang, Yu

    2008-03-01

    We report the formation of PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices from such heterostructures. Scanning electron microscopy studies show that silicon nanowires can be converted into PtSi nanowires through controlled reactions between lithographically defined platinum pads and silicon nanowires. High-resolution transmission electron microscopy studies show that PtSi/Si/PtSi heterostructure has an atomically sharp interface with epitaxial relationships of Si[110]//PtSi[010] and Si(111)//PtSi(101). Electrical measurements show that the pure PtSi nanowires have low resistivities approximately 28.6 microOmega.cm and high breakdown current densities>1x10(8) A/cm2. Furthermore, using single crystal PtSi/Si/PtSi nanowire heterostructures with atomically sharp interfaces, we have fabricated high-performance nanoscale field-effect transistors from intrinsic silicon nanowires, in which the source and drain contacts are defined by the metallic PtSi nanowire regions, and the gate length is defined by the Si nanowire region. Electrical measurements show nearly perfect p-channel enhancement mode transistor behavior with a normalized transconductance of 0.3 mS/microm, field-effect hole mobility of 168 cm2/V.s, and on/off ratio>10(7), demonstrating the best performing device from intrinsic silicon nanowires.

  14. Positron annihilation study on defects in ion-implanted Si

    International Nuclear Information System (INIS)

    Akahane, T.; Fujinami, M.; Sawada, T.

    2003-01-01

    Two-detector coincidence measurements of the Doppler broadened annihilation spectra with a variable energy positron beam are carried out for the study of the annealing behavior of Si implanted with As, P, Cu and H ions. In P-implanted Si, growth of the defect complexes are observed in coincidence Doppler broadening spectra up to 400degC. In Cu-implanted Si, the formation of defect-Cu complexes is indicated. In H-implanted Si, the passivation effect of hydrogen on positron traps are observed in the low temperature region up to 400degC. (author)

  15. Status of the digital pixel array detector for protein crystallography

    CERN Document Server

    Datte, P; Beuville, E; Endres, N; Druillole, F; Luo, L; Millaud, J E; Xuong, N H

    1999-01-01

    A two-dimensional photon counting digital pixel array detector is being designed for static and time resolved protein crystallography. The room temperature detector will significantly enhance monochromatic and polychromatic protein crystallographic through-put data rates by more than three orders of magnitude. The detector has an almost infinite photon counting dynamic range and exhibits superior spatial resolution when compared to present crystallographic phosphor imaging plates or phosphor coupled CCD detectors. The detector is a high resistivity N-type Si with a pixel pitch of 150x150 mu m, and a thickness of 300 mu m, and is bump bonded to an application specific integrated circuit. The event driven readout of the detector is based on the column architecture and allows an independent pixel hit rate above 1 million photons/s/pixel. The device provides energy discrimination and sparse data readout which yields minimal dead-time. This type of architecture allows a continuous (frameless) data acquisition, a f...

  16. Addimer diffusions on Si(100)

    International Nuclear Information System (INIS)

    Lee, Gun Do; Wang, C. Z.; Lu, Z. Y.; Ho, K. M.

    1999-01-01

    The diffusion pathways along the trough and between the trough and the dimer row on the Si(100) surface are investigated by tight-binding molecular dynamics calculations using the environment dependent tight-binding silicon potential and by ab initio calculations using the Car-Parrinello method. The studies discover new diffusion pathways consisting of rotation of addimer. The calculated energy barrier are in excellent agreement with experiment. The rotational diffusion pathway between the trough and the dimer row is much more energetically favorable than other diffusion pathways by parallel and perpendicular addimer. The new pathway along the trough is nearly same as the energy barrier of the diffusion pathway by dissociation of the addimer

  17. Hydrogenation/deuteration of the Si -SiO2 interface: Atomic-scale mechanisms and limitations

    Science.gov (United States)

    Tsetseris, L.; Pantelides, S. T.

    2005-03-01

    The mechanisms responsible for exchange of hydrogen with deuterium at the Si -SiO2 interfaces are analyzed through first-principles calculations. The associated reaction barrier is found to be 1.94 eV, in agreement with experiments of Cheng et al. [IEEE Electron. Device Lett. 22, 203 (2001); Cheng et al.J. Appl. Phys. 90, 6536 (2001)] that studied the kinetics of the phenomenon through electrical measurements. The substitution of hydrogen by deuterium can be limited by another possible process, the breakup of the D2 molecule to a pair of Si-D bonds, which has a similar barrier.

  18. GADRAS Detector Response Function.

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, Dean J.; Harding, Lee; Thoreson, Gregory G; Horne, Steven M.

    2014-11-01

    The Gamma Detector Response and Analysis Software (GADRAS) applies a Detector Response Function (DRF) to compute the output of gamma-ray and neutron detectors when they are exposed to radiation sources. The DRF is fundamental to the ability to perform forward calculations (i.e., computation of the response of a detector to a known source), as well as the ability to analyze spectra to deduce the types and quantities of radioactive material to which the detectors are exposed. This document describes how gamma-ray spectra are computed and the significance of response function parameters that define characteristics of particular detectors.

  19. Application of Geiger-mode photosensors in Cherenkov detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gamal, Ahmed, E-mail: gamal.ahmed@assoc.oeaw.ac.a [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences, Vienna (Austria); Al-Azhar University, Faculty of Science, Physics Department, Cairo (Egypt); Paul, Buehler; Michael, Cargnelli [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences, Vienna (Austria); Roland, Hohler [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Johann, Marton [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences, Vienna (Austria); Herbert, Orth [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Ken, Suzuki [Stefan Meyer Institute for Subatomic Physics of the Austrian Academy of Sciences, Vienna (Austria)

    2011-05-21

    Silicon-based photosensors (SiPMs) working in the Geiger-mode represent an elegant solution for the readout of particle detectors working at low-light levels like Cherenkov detectors. Especially the insensitivity to magnetic fields makes this kind of sensors suitable for modern detector systems in subatomic physics which are usually employing magnets for momentum resolution. We are characterizing SiPMs of different manufacturers for selecting sensors and finding optimum operating conditions for given applications. Recently we designed and built a light concentrator prototype with 8x8 cells to increase the active photon detection area of an 8x8 SiPM (Hamamatsu MPPC S10931-100P) array. Monte Carlo studies, measurements of the collection efficiency, and tests with the MPPC were carried out. The status of these developments are presented.

  20. Application of Geiger-mode photosensors in Cherenkov detectors

    Science.gov (United States)

    Gamal, Ahmed; Paul, Bühler; Michael, Cargnelli; Roland, Hohler; Johann, Marton; Herbert, Orth; Ken, Suzuki

    2011-05-01

    Silicon-based photosensors (SiPMs) working in the Geiger-mode represent an elegant solution for the readout of particle detectors working at low-light levels like Cherenkov detectors. Especially the insensitivity to magnetic fields makes this kind of sensors suitable for modern detector systems in subatomic physics which are usually employing magnets for momentum resolution. We are characterizing SiPMs of different manufacturers for selecting sensors and finding optimum operating conditions for given applications. Recently we designed and built a light concentrator prototype with 8×8 cells to increase the active photon detection area of an 8×8 SiPM (Hamamatsu MPPC S10931-100P) array. Monte Carlo studies, measurements of the collection efficiency, and tests with the MPPC were carried out. The status of these developments are presented.

  1. SIRI - A proposal for a multi-detector ΔE-E particle telescope

    International Nuclear Information System (INIS)

    Guttormsen, M.

    1992-06-01

    The CACTUS detector system which is mounted on the 90 o beam line of the Oslo Cyclotron consists of 28 NaI and 2 Ge detectors in combination with 8 Si particle telescopes. The Si particle telescopes are however based on an old technology with a geometrical lay-out that prohibits further increase in efficiency. In this report a replacement of the old system in the form of 64 telescopes based on silicon strip detectors is proposed. For the planned system called SIRI (Silicon Ring), the detectors are located on a ring around the target, covering the angles between 30 o and 60 o relative to the beam direction. The planned detector system will increase detector efficiency of charged particles by a factor 8. The design and construction of the new detector system is described and discussed. 8 refs., 9 figs., 4 tabs

  2. X-ray detectors in medical imaging

    International Nuclear Information System (INIS)

    Spahn, Martin

    2013-01-01

    Healthcare systems are subject to continuous adaptation, following trends such as the change of demographic structures, the rise of life-style related and chronic diseases, and the need for efficient and outcome-oriented procedures. This also influences the design of new imaging systems as well as their components. The applications of X-ray imaging in the medical field are manifold and have led to dedicated modalities supporting specific imaging requirements, for example in computed tomography (CT), radiography, angiography, surgery or mammography, delivering projection or volumetric imaging data. Depending on the clinical needs, some X-ray systems enable diagnostic imaging while others support interventional procedures. X-ray detector design requirements for the different medical applications can vary strongly with respect to size and shape, spatial resolution, frame rates and X-ray flux, among others. Today, integrating X-ray detectors are in common use. They are predominantly based on scintillators (e.g. CsI or Gd 2 O 2 S) and arrays of photodiodes made from crystalline silicon (Si) or amorphous silicon (a-Si) or they employ semiconductors (e.g. Se) with active a-Si readout matrices. Ongoing and future developments of X-ray detectors will include optimization of current state-of-the-art integrating detectors in terms of performance and cost, will enable the usage of large size CMOS-based detectors, and may facilitate photon counting techniques with the potential to further enhance performance characteristics and foster the prospect of new clinical applications

  3. Drift Chambers detectors; Detectores de deriva

    Energy Technology Data Exchange (ETDEWEB)

    Duran, I.; Martinez laso, L.

    1989-07-01

    We present here a review of High Energy Physics detectors based on drift chambers. The ionization, drift diffusion, multiplication and detection principles are described. Most common drift media are analysed, and a classification of the detectors according to its geometry is done. Finally the standard read-out methods are displayed and the limits of the spatial resolution are discussed. (Author) 115 refs.

  4. A micron resolution optical scanner for characterization of silicon detectors

    International Nuclear Information System (INIS)

    Shukla, R. A.; Dugad, S. R.; Gopal, A. V.; Gupta, S. K.; Prabhu, S. S.; Garde, C. S.

    2014-01-01

    The emergence of high position resolution (∼10 μm) silicon detectors in recent times have highlighted the urgent need for the development of new automated optical scanners of micron level resolution suited for characterizing microscopic features of these detectors. More specifically, for the newly developed silicon photo-multipliers (SiPM) that are compact, possessing excellent photon detection efficiency with gain comparable to photo-multiplier tube. In a short time, since their invention the SiPMs are already being widely used in several high-energy physics and astrophysics experiments as the photon readout element. The SiPM is a high quantum efficiency, multi-pixel photon counting detector with fast timing and high gain. The presence of a wide variety of photo sensitive silicon detectors with high spatial resolution requires their performance evaluation to be carried out by photon beams of very compact spot size. We have designed a high resolution optical scanner that provides a monochromatic focused beam on a target plane. The transverse size of the beam was measured by the knife-edge method to be 1.7 μm at 1 − σ level. Since the beam size was an order of magnitude smaller than the typical feature size of silicon detectors, this optical scanner can be used for selective excitation of these detectors. The design and operational details of the optical scanner, high precision programmed movement of target plane (0.1 μm) integrated with general purpose data acquisition system developed for recording static and transient response photo sensitive silicon detector are reported in this paper. Entire functionality of scanner is validated by using it for selective excitation of individual pixels in a SiPM and identifying response of active and dead regions within SiPM. Results from these studies are presented in this paper

  5. Simulating detectors dead time

    International Nuclear Information System (INIS)

    Rustom, Ibrahim Farog Ibrahim

    2015-06-01

    Nuclear detectors are used in all aspects of nuclear measurements. All nuclear detectors are characterized by their dead time i.e. the time needed by a detector to recover from a previous incident. A detector dead time influences measurements taken by a detector and specially when measuring high decay rate (>) where is the detector dead time. Two models are usually used to correct for the dead time effect: the paralayzable and the non-paralayzable models. In the current work we use Monte Carlo simulation techniques to simulate radioactivity and the effect of dead time and the count rate of a detector with a dead time =5x10 - 5s assuming the non-paralayzable model. The simulation indicates that assuming a non -paralayzable model could be used to correct for decay rate measured by a detector. The reliability of the non-paralayzable model to correct the measured decay rate could be gauged using the Monte Carlo simulation. (Author)

  6. The LDC detector concept

    Indian Academy of Sciences (India)

    ), the large detector concept (LDC) is being developed. The main points of the LDC are a large volume gaseous tracking system, combined with high precision vertex detector and an extremely granular calorimeter. The main design force ...

  7. Forward tracking detectors

    Indian Academy of Sciences (India)

    Abstract. Forward tracking is an essential part of a detector at the international linear collider (ILC). The requirements for forward tracking are explained and the proposed solutions in the detector concepts are shown.

  8. Thermal kinetic inductance detector

    Science.gov (United States)

    Cecil, Thomas; Gades, Lisa; Miceli, Antonio; Quaranta, Orlando

    2016-12-20

    A microcalorimeter for radiation detection that uses superconducting kinetic inductance resonators as the thermometers. The detector is frequency-multiplexed which enables detector systems with a large number of pixels.

  9. High energy charged particle registration in CR-39 polycarbonated detector

    International Nuclear Information System (INIS)

    Abdel-Wahab, M.S.; El Enany, N.; El Fiki, S.; Eissa, H.M.; El-Adl, E.H.; El-Feky, M.A.

    1991-01-01

    Track etch rate characteristics of CR-39 plastic detector exposed to 28 Si ions of 670 MeV energy have been investigated. Experimental results were obtained in terms of frequency distribution of the track diameter, track density and bulk etching rate. A dependence of the mean track diameter on energy was found. The application of the radiation effect of heavy ions on CR-39 in the field of radiation detection and dosimetry are discussed. Results indicated that it is possible to produce etchable tracks of 28 Si in this energy range in CR-39. We also report the etching characteristics of these tracks in the CR-39 detector. (orig.) [de

  10. Low-NEP pyroelectric detectors for calibration of UV and IR sources and detectors

    Science.gov (United States)

    Eppeldauer, G. P.; Podobedov, V. B.; Hanssen, L. M.; Cooksey, C. C.

    2017-09-01

    Pyroelectric radiometers with spectrally constant response have been developed at NIST with the cooperation of a few detector manufacturers. The new devices have noise-equivalent-power (NEP) values less than 1 nW/Hz1/2 sufficiently low for use at the output of regular monochromators. Their response flatness is an order of magnitude better than that of filtered Si detectors and can be used to realize simple and low-uncertainty responsivity scales for the UV and IR wavelength ranges. For the first time, the UV irradiance responsivity of a pyroelectric detector has been determined. Based on spectral reflectance measurements of the black coating of the pyroelectric detector, the relative spectral response was determined between 0.25 μm and 30 μm. The relative response was then converted into spectral power and irradiance responsivities using absolute tie points from a silicon-trap-detector in the VIS range. In addition to the UV irradiance responsivity scale realization, the flat response between 1.6 μm and 2.6 μm was utilized and a constant irradiance responsivity was realized and applied as a reference scale for the Spectral Irradiance and Radiance Responsivity Calibrations with Uniform Sources (SIRCUS) facility of NIST. The spectral power responsivity of the low-NEP pyroelectric detector is the internal standard of the NIST VIS-IR detector calibration facility for the 0.6 μm to 24 μm wavelength range. The pyroelectric standard is used to calibrate other types of detectors for spectral responsivity using detector substitution. The flat-response interval of the pyroelectric standard, calibrated for irradiance responsivity, was also used to measure the integrated irradiance from UV LED sources without using any source standard. The broadband radiometric measurements can be applied to IR LEDs emitting low fluxes between 750 nm and 4300 nm. All pyroelectric detector based calibrations were performed with expanded uncertainties of about 2 % (k=2).

  11. The LDC detector concept

    Indian Academy of Sciences (India)

    2004. Its goal is to design a complete detector concept for the LDC, based on a gaseous central tracking detector, and on granular calorimetry. The concept is heavily based on the concept of particle flow for event reconstruction. LDC started from the TESLA detector, developed for the TESLA TDR [2] and published in 2001.

  12. Gas filled detectors

    International Nuclear Information System (INIS)

    Stephan, C.

    1993-01-01

    The main types of gas filled nuclear detectors: ionization chambers, proportional counters, parallel-plate avalanche counters (PPAC) and microstrip detectors are described. New devices are shown. A description of the processes involved in such detectors is also given. (K.A.) 123 refs.; 25 figs.; 3 tabs

  13. The CAPRICE RICH detector

    International Nuclear Information System (INIS)

    Basini, G.; De Pascale, M.P.; Golden, R.L.; Barbiellini, G.; Boezio, M.

    1995-01-01

    A compact RICH detector has been developed and used for particle identification in a balloon borne spectrometer to measure the flux of antimatter in the cosmic radiation. This is the first RICH detector ever used in space experiments that is capable of detecting unit charged particles, such as antiprotons. The RICH and all other detectors performed well during the 27 hours long flight

  14. The LDC detector concept

    Indian Academy of Sciences (India)

    and an extremely granular calorimeter. The main design force behind the LDC is the particle flow concept. Keywords. International linear collider; large detector concept. PACS No. 13.66-a. 1. Introduction. The large detector concept (LDC) detector concept group [1] was formed early in. 2004. Its goal is to design a complete ...

  15. The CAPRICE RICH detector

    Energy Technology Data Exchange (ETDEWEB)

    Basini, G. [INFN, Laboratori Nazionali di Frascati, Rome (Italy); Codino, A.; Grimani, C. [Perugia Univ. (Italy)]|[INFN, Perugia (Italy); De Pascale, M.P. [Rome Univ. `Tor Vergata` (Italy). Dip. di Fisica]|[INFN, Sezione Univ. `Tor Vergata` Rome (Italy); Cafagna, F. [Bari Univ. (Italy)]|[INFN, Bari (Italy); Golden, R.L. [New Mexico State Univ., Las Cruces, NM (United States). Particle Astrophysics Lab.; Brancaccio, F.; Bocciolini, M. [Florence Univ. (Italy)]|[INFN, Florence (Italy); Barbiellini, G.; Boezio, M. [Trieste Univ. (Italy)]|[INFN, Trieste (Italy)

    1995-09-01

    A compact RICH detector has been developed and used for particle identification in a balloon borne spectrometer to measure the flux of antimatter in the cosmic radiation. This is the first RICH detector ever used in space experiments that is capable of detecting unit charged particles, such as antiprotons. The RICH and all other detectors performed well during the 27 hours long flight.

  16. Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application

    Science.gov (United States)

    Park, Goon-Ho; Cho, Won-Ju

    2010-01-01

    Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin SiO2 and Si3N4 dielectric layers were used as engineered tunneling barriers. High-k dielectrics were used as charge trapping and blocking oxide layer to improve the program/erase speed. The VARIOT type tunneling barrier composed of oxide-nitride-oxide layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase in interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

  17. Operation of heavily irradiated silicon detectors in non-depletion mode

    International Nuclear Information System (INIS)

    Verbitskaya, E.; Eremin, V.; Ilyashenko, I.; Li, Z.; Haerkoenen, J.; Tuovinen, E.; Luukka, P.

    2006-01-01

    The non-depletion detector operation mode has generally been disregarded as an option in high-energy physics experiments. In this paper, the non-depletion operation is examined by detailed analysis of the electric field distribution and the current pulse response of heavily irradiated silicon (Si) detectors. The previously reported model of double junction in heavily irradiated Si detector is further developed and a simulation of the current pulse response has been performed. It is shown that detectors can operate in a non-depletion mode due to the fact that the value of the electric field in a non-depleted region is high enough for efficient carrier drift. This electric field originates from the current flow through the detector and a consequent drop of the potential across high-resistivity bulk of a non-depleted region. It is anticipated that the electric field in a non-depleted region, which is still electrically neutral, increases with fluence that improves the non-depleted detector operation. Consideration of the electric field in a non-depleted region allows the explanation of the recorded double-peak current pulse shape of heavily irradiated Si detectors and definition of the requirements for the detector operational conditions. Detailed reconstruction of the electric field distribution gives new information on radiation effects in Si detectors

  18. Mounting and testing of a 'sandwich' type neutron spectrometer with semiconductor detectors and 6Li

    International Nuclear Information System (INIS)

    Fabro, M.A.

    1973-01-01

    Commercial surface barrier detectors (Si(Au)) were used to construct the spectrometer; the 6 LiF was evaporated by vacuum onto a film of Formvar and afterwards over the surface of one of the detectors, with a 6 LiF thickness of 0,2 μm (50 μg/cm 2 ) and 1,5 μm(400 μg/cm 2 ) respectively. Tests were made with slow neutrons and with neutrons from the reactions D(d,n) 3 He (2,65 MeV) and T(d,n) 4 He (14 MeV). The energy resolution for thermal neutrons was about 200 keV (FWHM) for the sum (E sub(t) + E sub(α)) and about 7 keV (FWHM) for the difference (E sub(t) - E sub(α)) with an evaluated efficiency of 5,5x10 -4 , for the sum. For the 2,65 MeV neutrons, the energy resolution was about 240 keV (FWHM) and an evaluated efficiency of 2,1 x 10 -7 . It was not possible to detect 14 MeV neutrons [pt

  19. SiC flame sensors for gas turbine control systems

    Science.gov (United States)

    Brown, Dale M.; Downey, Evan; Kretchmer, Jim; Michon, Gerald; Emily Shu; Schneider, Don

    1998-05-01

    The research and development activities carried out to develop a SiC flame sensor for gas turbines utilized for power generation are discussed. These activities included the fabrication and characterization of SiC UV photodiodes and small SiC signal diodes as well as the designing and testing of production flame detector assemblies. The characteristics that make this solid state flame detector particularly useful for dry low NO x (DLN) premixed oil and natural gas fuels will be described. Since this device provides both analog dc and ac output signals, turbine combustor mode tracking, combustion flame dynamics and flame intensity tracking have been demonstrated. Sensors designed for production have been built, qualified and field tested. These sensors are now being installed in gas turbine power plants and are a component part of the turbine control system. This development has resulted in the first commercialized turbine control application to use SiC electronic devices.

  20. Low-Power Large-Area Radiation Detector for Space Science Measurements

    Data.gov (United States)

    National Aeronautics and Space Administration — The objective of this task is to develop a low-power, large-area detectors from SiC, taking advantage of very low thermal noise characteristics and high radiation...