WorldWideScience

Sample records for barrier si detector

  1. Al/Au/n-Si/Al surface barrier detector

    International Nuclear Information System (INIS)

    Charged-particle detectors are required to be operated sometimes in ambient light for applications like alpha counting and range finding. Detectors like Al/p-Si surface barrier with aluminium on the front side are found quite suitable. Gold/n-Si surface barrier detectors are not usable because of their excessive background photo current. These detectors, we fabricate for use in nuclear experiments, were given an aluminium coating on their gold side for use in room light. The Au/n-Si/Al surface barrier diodes were characterized for their electrical properties and performance as alpha detectors. Detectors showing good energy resolution (∼ 50 KeV) were selected and provided with another thin reflecting coat of aluminium on their front sides

  2. Fission fragment mass reconstruction from Si surface barrier detector measurement

    OpenAIRE

    Velkovska, J.; McGrath, R. L.

    1998-01-01

    A method for plasma delay and pulse-height defect corrections for Si surface barrier detectors (SBD) is presented. Based on known empirical formulae, simple approximations involving the measured time-of-flight (TOF) and energy of the ions were found and a mass reconstruction procedure was developed. The procedure was applied for obtaining the fission fragment mass and angular distributions from the $^{64}$ Ni+$^{197}$Au reaction at 418 MeV and 383 MeV incident energy using an array of eight S...

  3. Multiple scattering of heavy ions through ΔE Si surface barrier detectors

    International Nuclear Information System (INIS)

    The multiple scattering of 30-60 MeV 12C ions and 40-70 MeV 16 O ions by ΔE Si surface barrier detectors of thicknesses 10.3 μm and 14 μm was measured with a position sensitive detector. The horizontal spatial distributions of the heavy ions were extracted from position measurements made both with and without the ΔE counter in place. Calculations based on the theories of Moliere and Nigam, Sundaresan, and Wu (NSW) were made and compared to the data. The much simpler form of the NSW theory predicted fwhm which were much too large when compared to the experimental data while the Moliere theory gave a reasonable description of the experimental distributions at the higher incident particle energies. However, the Moliere calculations overestimated the fwhm by 28% in the case of 30 MeV 12C ions incident upon the 10.3 μm detector. Particle detection efficiencies for a typical time-of-flight system are presented. (Auth.)

  4. Complementary barrier infrared detector (CBIRD)

    Science.gov (United States)

    Ting, David Z. (Inventor); Bandara, Sumith V. (Inventor); Hill, Cory J. (Inventor); Gunapala, Sarath D. (Inventor)

    2013-01-01

    An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier.

  5. Barrier infrared detector

    Science.gov (United States)

    Ting, David Z. (Inventor); Khoshakhlagh, Arezou (Inventor); Soibel, Alexander (Inventor); Hill, Cory J. (Inventor); Gunapala, Sarath D. (Inventor)

    2012-01-01

    A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be "chirped" (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays.

  6. Radiation Damage Effect on Si and SiC Detectors

    International Nuclear Information System (INIS)

    Silicon is an extraordinary semiconductor suited for the fabrication of radiation detector. Charge carrier lifetime and mobility are high, which is very important to make the radiation detector with low noise and good time behavior. Since the fabrication technology of the silicon was mature, one could easily make a radiation detector with a sophisticated structure. Therefore, silicon detector could be the best choice for the various application areas. The depletion layers of the reverse bias rectifying barriers are used to make the silicon radiation detector with low noise. The depletion layer could be made by a silicon surface barrier (SSB) structure or a PIN junction structure. SSB detector was made by depositing the metal electrode on the n or p type silicon wafer. The p-n junction could be made with the semiconductor fabrication process, and the X-ray or α particles could be measured with the detector. The radiation tolerance of the radiation detector is also very important for the application of the detector to the harsh environment. A study on the effect of the structure of the depletion layer on the radiation tolerance was rare in most of the previous works In the present work, the silicon detectors with two types were fabricated, and their operation characteristics are compared. The dependency of the radiation damage on the detector type was studied. We also fabricated SiC detector and the neutron and gamma irradiation effect on the detector was studied. The radiation tolerance of the detector was studied. One could see the change of the leakage current and the energy resolution in SSB detector, and the operating performance of the Si PIN detector was more stable than Si Schottky detector.

  7. Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

    International Nuclear Information System (INIS)

    The fabrication of nano-scale NiSi/n-Si Schottky barrier diode by rapid thermal annealing process is reported. The characterization of the nano-scale NiSi film was performed using Micro-Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The thickness of the film (27 nm) has been measured by cross-sectional Secondary Electron Microscopy and XPS based depth profile method. Current–voltage (I–V) characteristics show an excellent rectification ratio (ION/IOFF = 105) at a bias voltage of ±1 V. The diode ideality factor is 1.28. The barrier height was also determined independently based on I–V (0.62 eV) and high frequency capacitance–voltage technique (0.76 eV), and the correlation between them has explained. The diode photo-response was measured in the range of 1.35–2.5 μm under different reverse bias conditions (0.0–1.0 V). The response is observed to increase with increasing reverse bias. From the photo-responsivity study, the zero bias barrier height was determined to be 0.54 eV.

  8. Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

    Energy Technology Data Exchange (ETDEWEB)

    Roy, S. [Centre for Nanotechnology and Science, Indian Institute of Technology Bombay, Mumbai 400076 (India); Centre of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Midya, K.; Duttagupta, S. P., E-mail: sdgupta@ee.iitb.ac.in [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Centre of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Ramakrishnan, D. [Department of Earth Science, Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2014-09-28

    The fabrication of nano-scale NiSi/n-Si Schottky barrier diode by rapid thermal annealing process is reported. The characterization of the nano-scale NiSi film was performed using Micro-Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The thickness of the film (27 nm) has been measured by cross-sectional Secondary Electron Microscopy and XPS based depth profile method. Current–voltage (I–V) characteristics show an excellent rectification ratio (I{sub ON}/I{sub OFF} = 10⁵) at a bias voltage of ±1 V. The diode ideality factor is 1.28. The barrier height was also determined independently based on I–V (0.62 eV) and high frequency capacitance–voltage technique (0.76 eV), and the correlation between them has explained. The diode photo-response was measured in the range of 1.35–2.5 μm under different reverse bias conditions (0.0–1.0 V). The response is observed to increase with increasing reverse bias. From the photo-responsivity study, the zero bias barrier height was determined to be 0.54 eV.

  9. HgCdTe barrier infrared detectors

    Science.gov (United States)

    Kopytko, M.; Rogalski, A.

    2016-05-01

    In the last decade, new strategies to achieve high-operating temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, and multistage (cascade) infrared detectors. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap type-II superlattices is especially helpful in the design of unipolar barriers. This idea has been also implemented in HgCdTe ternary material system. However, the implementation of this detector structure in HgCdTe material system is not straightforward due to the existence of a valence band discontinuity (barrier) at the absorber-barrier interface. In this paper we present status of HgCdTe barrier detectors with emphasis on technological progress in fabrication of MOCVD-grown HgCdTe barrier detectors achieved recently at the Institute of Applied Physics, Military University of Technology. Their performance is comparable with state-of-the-art of HgCdTe photodiodes. From the perspective of device fabrication their important technological advantage results from less stringent surface passivation requirements and tolerance to threading dislocations.

  10. Optimum Barrier Height for SiC Schottky Barrier Diode

    OpenAIRE

    Mohamed Abd El-Latif; Alaa El-Din Sayed Hafez

    2013-01-01

    The study of barrier height control and optimization for Schottky barrier diode (SBD) from its physical parameters have been introduced using particle swarm optimization (PSO) algorithm. SBD is the rectifying barrier for electrical conduction across the metal semiconductor (MS) junction and, therefore, is of vital importance to the successful operation of any semiconductor device. 4H-SiC is used as a semiconductor material for its good electrical characteristics with high-power semiconductor ...

  11. Complementary Barrier Infrared Detector (CBIRD) Contact Methods

    Science.gov (United States)

    Ting, David Z.; Hill, Cory J.; Gunapala, Sarath D.

    2013-01-01

    The performance of the CBIRD detector is enhanced by using new device contacting methods that have been developed. The detector structure features a narrow gap adsorber sandwiched between a pair of complementary, unipolar barriers that are, in turn, surrounded by contact layers. In this innovation, the contact adjacent to the hole barrier is doped n-type, while the contact adjacent to the electron barrier is doped p-type. The contact layers can have wider bandgaps than the adsorber layer, so long as good electrical contacts are made to them. If good electrical contacts are made to either (or both) of the barriers, then one could contact the barrier(s) directly, obviating the need for additional contact layers. Both the left and right contacts can be doped either n-type or ptype. Having an n-type contact layer next to the electron barrier creates a second p-n junction (the first being the one between the hole barrier and the adsorber) over which applied bias could drop. This reduces the voltage drop over the adsorber, thereby reducing dark current generation in the adsorber region.

  12. Detectors for proton counting. Si-APD and scintillation detectors

    International Nuclear Information System (INIS)

    Increased intensity of synchrotron radiation requests users to prepare photon pulse detectors having higher counting rates. As detectors for photon counting, silicon-avalanche photodiode (Si-APD) and scintillation detectors were chosen for the fifth series of detectors. Principle of photon detection by pulse and need of amplification function of the detector were described. Structure and working principle, high counting rate measurement system, bunch of electrons vs. counting rate, application example of NMR time spectroscopy measurement and comments for users were described for the Si-APD detector. Structure of scintillator and photomultiplier tube, characteristics of scintillator and performance of detector were shown for the NaI detector. Future development of photon pulse detectors was discussed. (T. Tanaka)

  13. Silicon surface barrier detector for fusion neutron spectroscopy

    International Nuclear Information System (INIS)

    This paper presents an investigation of the usefulness of the intrinsic 28Si(n,α)25Mg and 28Si(n,p)28Al reactions in silicon surface barrier detectors for measurements of ion temperatures in D-T fusion plasmas and of D-T fusion neutron flux. For a 14-MeV neutron-generator narrow energy-line source, the energy resolution (∼1.5%), detection efficiency and useful count rates have been determined. Based on these results, for a 100 ms time bin, D-T plasma ion temperatures from 2 to 6 keV can be determined from the FWHM of the neutron-induced α spectral lines, with the error estimated to be 25% to 5%, respectively. The maximum intrinsic detection efficiency for a nominal 1500 μm thick detector is ∼6 x 10-4

  14. Doping-Spike PtSi Schottky Infrared Detectors with Extended Cutoff Wavelengths

    Science.gov (United States)

    Lin, T. L.; Park, J. S.; Gunapala, S. D.; Jones, E. W.; Castillo, H. M. Del

    1994-01-01

    A technique incorporating a p+ doping spike at the silicide/Si interface to reduce the effective Schottky barrier of the silicide infrared detectors and thus extend the cutoff wavelength has been developed.

  15. Application of pulse shape discrimination in Si detector for fission fragment angular distribution measurements

    Indian Academy of Sciences (India)

    B K Nayak; E T Mirgule; R K Choudhury

    2005-12-01

    Pulse shape discrimination (PSD) with totally depleted transmission type Si surface barrier detector in reverse mount has been investigated to identify fission fragments in the presence of elastic background in heavy ion-induced fission reactions by both numerical simulation and experimental studies. The PSD method is compared with the other conventional methods adopted to identify fission fragments with solid-state detectors such as - telescope and single thin detector and the data for the 10B + 232Th fission reaction are presented. Results demonstrate the usefulness of a single transmission-type surface barrier detector for the identification of fission fragments and projectiles like heavy ions.

  16. Development of Si (Li) detectors for charged particles spectrometer

    CERN Document Server

    Onabe, H; Obinata, M; Kashiwagi, T

    2002-01-01

    Lithium drifted silicon (Si (Li)) detectors with high-quality large area for charged particles spectrometer abroad artificial satellite have been developed. Surface stability can be obtained by thin p-n junction fabricated with the applied photo engraving process (PEP) instead of surface barrier. The region compensated with Lithium can be improved by the adequate heat treatment, and this improvement can be monitored by means of a combination of copper plating and subsequent micro-XRF analysis. The detectors fabricated from the thermal treated wafers were found to have better energy resolution both for alpha-particles from sup 2 sup 4 sup 1 Am and conversion electrons from sup 2 sup 0 sup 7 Bi. (author)

  17. Correlation of DT and DD fusion neutron damage in silicon surface barrier detector

    International Nuclear Information System (INIS)

    In order to examine the correlation of DT and DD fusion neutron damage in Si, a silicon surface barrier detector (Si-SBD) was irradiation with neutrons from a deuteron accelerator. The leakage current increased proportionally with neutron fluence, which determined the neutron damage constant for the Si-SBD. The correlation factor of the DT and DD neutron damage in the Si-SBD was determined from the ratio of the DT and DD neutron damage constants and was found to be 2.3. We also calculated the rate of DT and DD neutron displacement damage for Si by using the TRIM-90 computer program and actual data on neutron reactions in the Si-SBD. The correlation factor of DT and DD neutron damage from the calculation agreed with that from the Si-SBD irradiation experiment. (author)

  18. Effect of Si/Si1-yCy/Si Barriers on the Characteristics of Si1-xGex/Si Resonant Tunneling Structures

    Institute of Scientific and Technical Information of China (English)

    HAN Ping; CHENG Xue-Mei; Masao Sakuraba; YoungCheon Jeong; Takashi Matsuura; Junichi Murota

    2000-01-01

    P-type double barrier resonant tunneling diodes (RTD) with the single Si0.6Ge0.4 quantum well and double Si0.6 Ge0.4 spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si1-yCy layer on the characteristics of the devices was shown by comparing the current-voltage (Ⅰ-Ⅴ) characteristics of RTD's of the barriers of Si layers with that of Si/Si1-yCy/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/Si1-yCy/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/Si1-yCy/Si barriers. The possible mechanism for the observed Ⅰ-Ⅴcharacteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si1-yCy layers in the Si/Si1-yCy/Si barriers.

  19. Advanced Environmental Barrier Coatings Development for Si-Based Ceramics

    Science.gov (United States)

    Zhu, Dong-Ming; Choi, R. Sung; Robinson, Raymond C.; Lee, Kang N.; Bhatt, Ramakrishna T.; Miller, Robert A.

    2005-01-01

    Advanced environmental barrier coating concepts based on multi-component HfO2 (ZrO2) and modified mullite systems are developed for monolithic Si3N4 and SiC/SiC ceramic matrix composite (CMC) applications. Comprehensive testing approaches were established using the water vapor cyclic furnace, high pressure burner rig and laser heat flux steam rig to evaluate the coating water vapor stability, cyclic durability, radiation and erosion resistance under simulated engine environments. Test results demonstrated the feasibility and durability of the environmental barrier coating systems for 2700 to 3000 F monolithic Si3N4 and SiC/SiC CMC component applications. The high-temperature-capable environmental barrier coating systems are being further developed and optimized in collaboration with engine companies for advanced turbine engine applications.

  20. High Operating Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

    Science.gov (United States)

    Ting, David Z. (Inventor); Hill, Cory J. (Inventor); Seibel, Alexander (Inventor); Bandara, Sumith Y. (Inventor); Gunapala, Sarath D. (Inventor)

    2015-01-01

    A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.

  1. Complementary Barrier Infrared Detector (CBIRD) with Double Tunnel Junction Contact and Quantum Dot Barrier Infrared Detector (QD-BIRD)

    Science.gov (United States)

    Ting, David Z.-Y; Soibel, Alexander; Khoshakhlagh, Arezou; Keo, Sam A.; Nguyen, Jean; Hoglund, Linda; Mumolo, Jason M.; Liu, John K.; Rafol, Sir B.; Hill, Cory J.; Gunapala, Sarath D.

    2012-01-01

    The InAs/GaSb type-II superlattice based complementary barrier infrared detector (CBIRD) has already demonstrated very good performance in long-wavelength infrared (LWIR) detection. In this work, we describe results on a modified CBIRD device that incorporates a double tunnel junction contact designed for robust device and focal plane array processing. The new device also exhibited reduced turn-on voltage. We also report results on the quantum dot barrier infrared detector (QD-BIRD). By incorporating self-assembled InSb quantum dots into the InAsSb absorber of the standard nBn detector structure, the QD-BIRD extend the detector cutoff wavelength from approximately 4.2 micrometers to 6 micrometers, allowing the coverage of the mid-wavelength infrared (MWIR) transmission window. The device has been observed to show infrared response at 225 K.

  2. Surface Leakage Mechanisms in III-V Infrared Barrier Detectors

    Science.gov (United States)

    Sidor, D. E.; Savich, G. R.; Wicks, G. W.

    2016-09-01

    Infrared detector epitaxial structures employing unipolar barriers exhibit greatly reduced dark currents compared to simple pn-based structures. When correctly positioned within the structure, unipolar barriers are highly effective at blocking bulk dark current mechanisms. Unipolar barriers are also effective at suppressing surface leakage current in infrared detector structures employing absorbing layers that possess the same conductivity type in their bulk and at their surface. When an absorbing layer possesses opposite conductivity types in its bulk and at its surface, unipolar barriers are not solutions to surface leakage. This work reviews empirically determined surface band alignments of III-V semiconductor compounds and modeled surface band alignments of both gallium-free and gallium-containing type-II strained layer superlattice material systems. Surface band alignments are used to predict surface conductivity types in several detector structures, and the relationship between surface and bulk conductivity types in the absorbing layers of these structures is used as the basis for explaining observed surface leakage characteristics.

  3. Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode

    International Nuclear Information System (INIS)

    Nitrogen atomic-layer (N AL) doping effects upon hole tunneling characteristics of double 4 nm-thick Si barriers in the strained Si1−xGex/Si(100) hole resonant tunneling diode (RTD) were investigated. At a Si cap layer on Si1−xGex(100) (x = 0.2 and 0.4) formed at 500 °C, it was found that NH3 reaction was drastically enhanced at 500 °C especially at the Si cap layer thickness less than 0.5 nm, and the fact indicates a possibility of significant intermixing at the Si/Si1−xGex heterointerface. From current–voltage characteristics of the RTDs, drastic current suppression by N AL doping in the Si barriers can be observed with typical degree of current suppression as high as 103–105 at − 10 mV. Moreover, it was found that N AL doping influences, not only upon such current suppression, but slightly upon negative differential conductance characteristics. - Highlights: • NH3 reaction enhancement on a thin Si cap layer on Si1−xGex(100). • Drastic current suppression by N atomic-layer doping in Si barriers. • N atomic-layer doping effect upon negative differential conductance characteristics

  4. Thermal stability of Nb-Si-N and Ta-Si-N as diffusion barriers between Cu and Si

    International Nuclear Information System (INIS)

    In this study, Nb-Si-N and Ta-Si-N films were deposited on (100)Si wafers using a reactive sputtering technique and their thermal stability indispensable for a barrier metal against Cu was investigated using sheet resistance measurement, X-ray diffraction, and Auger electron spectroscopy depth profiling. The N2/Ar gas flow ratio for the sputter deposition of the Nb-Si-N and Ta-Si-N films with the highest thermal stability were found to be 5 % and 15 %, respectively. The Nb-Si-N film failed at 700 .deg. C, while the Ta-Si-N film failed at 900 .deg. C. the failure mechanism of the Nb-Si-N was found to be as follows : Cu atoms move to the Nb-Si-N/Si interface through the Nb-Si-N film and react with Si atoms in the Si substrate resulting in the formation of Cu3Si at the Nb-Si-N/Si interface. Also the failure mechanism of Ta-Si-N was found to be nearly the same as that of Nb-Si-N

  5. Two-dimensional position sensitive Si(Li) detector

    International Nuclear Information System (INIS)

    Circular, large-area two-dimensional Si(Li) position sensitive detectors have been fabricated. The detectors employ a thin lithium-diffused n+ resisitive layer for one contact and a boron implanted p+ resistive layer for the second contact. A position resolution of the order of 100 μm is indicated

  6. Si strip detector with integrated coupling capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Caccia, M.; Evensen, L.; Hansen, T.E.; Horisberger, R.; Hubbeling, L.; Peisert, A.; Tuuva, T.; Weilhammer, P.; Zalewska, A.

    1987-10-01

    A silicon microstrip detector with capacitive coupling of the diode strips to the metallization and with individual polysilicon resistors to each diode has been developed. The detector was tested in a minimum ionizing particle beam showing a performance similar to conventional strip detectors and a spatial resolution of 3.5 ..mu..m. Capacitive coupling allows the decoupling of the leakage current from the input to the charge sensitive preamplifier especially in the case of LSI electronics.

  7. Silicon surface-barrier nuclear-particle detectors

    International Nuclear Information System (INIS)

    Silicon surface-barrier detectors with sensitive areas of 25 mm2 and 1 cm2 have given a resolution of 13.5keV (FWHM) and 17keV, respectively, for alpha particles of 5.5 MeV. Detectors made from an entire ingot section and having a sensitive area of 2.6 cm2 have given a resolution of ∼ 1% which was limited by noise due to diode current. Barrier depths approaching 1 mm have been achieved using diodes made from 3500 Ω-cm n-type silicon with 1000-V bias. At 500 V the reverse current was -6 A/cm2. These barrier depths permit the detection of 10-MeV protons with good energy linearity. Silicon surface-barrier detectors have been used to measure electron, β, p, d, t, α, heavy-ion and fission-fragment energies. Fast-neutron spectrometry has been performed by using a Li6 radiator and a 4 π detector geometry. Thin silicon surface-barrier detectors suitable for dE/dX applications have been made with areas ranging from 1/10 to 2 cm2 and thicknesses down to 75 μ. Alpha-particle resolution of 22 keV is typical of 1/2-cm2 units, and the sensitive region can be extended to within approximately 10μ of the rear surface. An amplifier system has been designed specifically for use with silicon diode detectors to achieve the optimum pulse-height resolution. The noise with a capacitive load of 20 pF and 180pF on the amplifier input is ∼ 3.5 and 10keV, respectively. A built-in window amplifier allows a small portion of the pulse-height spectrum to be spread out over the entire capacity of multichannel pulse-height analyser. The system, including window amplifier, has a drift of < 300 eV/h and a line-voltage sensitivity of < 250 eV/line volt, when analysing a charge pulse on the input equivalent to 5.5 MeV. (author)

  8. Determining the efficiency of Si(Li) detectors

    International Nuclear Information System (INIS)

    Following the comprehensive discussion on the feasibility of determining the efficiency of Si(Li) detectors, the most suitable method for the determination was selected for the energy range 1-10 keV. Comparative measurements were performed with a flow proportional counter of equivalent geometry to the Si(Li) detector. The method depends on the efficiency of proportional counters being known. This is defined by fitting a model parameter by the least squares method. The information relevant to Si(Li) detectors was tested by adjusting the parameters (thickness of beryllium window, gold layer thickness, length of dead layer in the Si(Li) crystal) from the measured values by the least squares method. (Auth./G.T.H.)

  9. Superlattice Barrier Infrared Detector Development at the Jet Propulsion Laboratory

    Science.gov (United States)

    Ting, David Z.; Soibel, Alexander; Rafol, Sir B.; Nguyen, Jean; Hoglund, Linda; Khoshakhlagh, Arezou; Keo, Sam A.; Liu, John K.; Mumolo, Jason M.

    2011-01-01

    We report recent efforts in achieving state-of-the-art performance in type-II superlattice based infrared photodetectors using the barrier infrared detector architecture. We used photoluminescence measurements for evaluating detector material and studied the influence of the material quality on the intensity of the photoluminescence. We performed direct noise measurements of the superlattice detectors and demonstrated that while intrinsic 1/f noise is absent in superlattice heterodiode, side-wall leakage current can become a source of strong frequency-dependent noise. We developed an effective dry etching process for these complex antimonide-based superlattices that enabled us to fabricate single pixel devices as well as large format focal plane arrays. We describe the demonstration of a 1024x1024 pixel long-wavelength infrared focal plane array based the complementary barrier infrared detector (CBIRD) design. An 11.5 micron cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 ?m cutoff focal plane array are also presented.

  10. 4H-SiC detectors for ultraviolet light monitoring

    Science.gov (United States)

    Mazzillo, M.; Sciuto, A.; Badalà, P.; Carbone, B.; Russo, A.; Coffa, S.

    2015-02-01

    Silicon Carbide (SiC) provides the unique property of near-perfect visible blindness and very high signal-to-noise ratio due to the high quantum efficiency and low dark current even at high temperature. These features make SiC the best available material for the manufacturing of visible blind semiconductor ultraviolet (UV) light detectors. Thanks to their properties, SiC detectors have been extensively used in fact for flame detection monitoring, UV sterilization and astronomy. Here we report on the electrical and optical performance of patterned thin metal film NiSi/4H-SiC vertical Schottky photodiodes with different semiconductor exposed area suitably designed for UV light monitoring.

  11. InGaAs Schottky barrier diode array detector for a real-time compact terahertz line scanner.

    Science.gov (United States)

    Han, Sang-Pil; Ko, Hyunsung; Park, Jeong-Woo; Kim, Namje; Yoon, Young-Jong; Shin, Jun-Hwan; Kim, Dae Yong; Lee, Dong Hun; Park, Kyung Hyun

    2013-11-01

    We present a terahertz (THz) broadband antenna-integrated 1 × 20 InGaAs Schottky barrier diode (SBD) array detector with an average responsivity of 98.5 V/W at a frequency of 250 GHz, which is measured without attaching external amplifiers and Si lenses, and an average noise equivalent power (NEP) of 106.6 pW/√Hz. The 3-dB bandwidth of the SBD detector is also investigated at approximately 180 GHz. For implementing an array-type SBD detector by a simple fabrication process to achieve a high yield, a structure comprising an SiN(x) layer instead of an air bridge between the anode and the cathode is designed. THz line beam imaging using a Gunn diode emitter with a center frequency of 250 GHz and a 1 × 20 SBD array detector is successfully demonstrated. PMID:24216813

  12. A new configuration of the Moxon-Rae detector based on Si detector

    International Nuclear Information System (INIS)

    A new Moxon-Rae detector configuration based on Si semiconductor detector was proposed in this paper. Three γ-ray sources, 137Cs, 60Co, and 24Na, were employed to make actual measurements using the new Moxon-Rae detector. The measured pulse height spectra and detection efficiencies were compared with the EGS4 simulated values. The results revealed that the proposed new configuration is indeed a successful method and specially a useful technique for higher energy γ-ray measurement

  13. Performance Improved by Incorporating of Ru Atoms into Zr-Si Diffusion Barrier for Cu Metallization

    International Nuclear Information System (INIS)

    Thin Ru21Zr64Si15 films deposited on Si substrates by radio frequency reactive magnetron sputtering are studied and evaluated as diffusion barriers for Cu metallization. Cu/Ru21Zr64Si15/Si and Cu/Zr67Si33/Si structure samples are prepared under the same procedures for comparison. The thermal stability, phase formation, surface morphology and atomic depth profile of the Cu/Ru21Zr64Si15/Si and Cu/Zr67Si33/Si structures before and after annealing at different temperatures are investigated. In conjunction with these analyses, the Cu/Ru21Zr64Si15/Si contact system shows high thermal stability at least up to 650°C. The results obtained reveal that the incorporation of Ru atoms into the Zr67Si33 barrier layer is shown to be beneficial for improving the thermal stability of the Cu/barrier/Si contact system

  14. Junction barrier Schottky diodes in 6H SiC

    Science.gov (United States)

    Zetterling, Carl-Mikael; Dahlquist, Fanny; Lundberg, Nils; Östling, Mikael; Rottner, Kurt; Ramberg, Lennart

    1998-09-01

    Junction barrier Schottky (JBS) diodes in 6H SiC have been fabricated and characterised electrically. This device, demonstrated in silicon technology, has the advantage of a low forward voltage drop comparable to that of Schottky diodes, as well as a high blocking voltage and low reverse leakage current of a pn junction. This is especially attractive for wide bandgap materials such as SiC in which pn junctions have a large forward voltage drop. The devices were capable of blocking up to 1100 V with a leakage current density of 0.15 A cm -2, limited by the leakage when the drift region was fully depleted, or breakdown of the SiC material itself. The forward conduction was limited by an on-resistance of 20 mΩ cm 2, resulting in forward voltage drops of 2.6 V at 100 A cm -2.

  15. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zheng; Chen, Wei

    2016-07-05

    A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

  16. The SiD Detector for the International Linear Collider

    CERN Document Server

    ,

    2015-01-01

    The SiD Detector is one of two validated detector designs for the future International Linear Collider. SiD features a compact, cost-constrained design for precision Higgs couplings determination, and other measurements, and sensitivity to a wide range of possible new phenomena. A robust silicon vertex and tracking system, combined with a 5 Tesla central solenoidal field, provides excellent momentum resolution. The highly granular calorimeter system is optimized for Particle Flow application to achieve very good jet energy resolution over a wide range of energies. Details of the proposed implementation of the SiD subsystems, as driven by the physics requirements, will be given. The shared interaction point, push-pull mechanism, will be described, together with the estimated timeline for construction.

  17. Temperature- Dependent Barrier Characteristics of Inhomogeneous In/p-Si (100) Schottky Barrier Diodes

    Institute of Scientific and Technical Information of China (English)

    N.Tugluoglu; S.Karadeniz; S.Acar; M.Kasap2

    2004-01-01

    The current-voltage (I- V) characteristics of In/p-Si Schottky barrier diodes have been determined in the temperature range 100-300 K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the metal-semiconductor interface. The evaluation of the experimental I-V data reveals a decrease of zero-bias barrier height but an increase of ideality factor n with decreasing temperature. The inhomogeneities are considered to have Gaussian distribution with a mean zero-bias barrier height of 0.630 e V and standard deviation of 0.083 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained to be 0.617eV and 20.71 A K-2 cm-2, respectively, by means of the modified Richardson plot, ln( I0/T2) - (q2σs20/2k2T2) versus 1000/T.

  18. Simulations of SiPM based scintillation detector for PANDA

    International Nuclear Information System (INIS)

    The Facility for Antiproton and Ion Research (FAIR) is a future project at GSI which will extend hadron physics studies up to the charm meson region using antiproton beams together with a state-of-the-art PANDA (acronym for antiProton ANnihilation at DArmstadt) detector. The physics aim, in a broader sense, is to address the fundamental problems of hadron physics and aspects of Quantum Chromo Dynamics (QCD) at low energies. The proposed work in India will consist of several parts: (i) development of a SiPM based scintillation tile hodoscope for TOF information, (ii) development of a luminosity detector (silicon strip detector), and (iii) simulation studies of these detectors design as well as physics case studies. The present paper reports the initial simulation studies that have been started at Nuclear Physics Division (NPD), BARC, on the silicon photomultiplier(SiPM) based fast scintillation detector (SciTil). The hardware development activities on this SciTil detector, that are also going on in parallel at NPD, has been reported in an another contribution to this proceedings

  19. Imaging with SiPMs in noble-gas detectors

    Science.gov (United States)

    Yahlali, N.; Fernandes, L. M. P.; González, K.; Garcia, A. N. C.; Soriano, A.

    2013-01-01

    Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive photosensors for imaging. However they are insensitive to the VUV scintillation emitted by the noble gases (xenon and argon). This difficulty is overcome in the NEXT experiment by coating the SiPMs with tetraphenyl butadiene (TPB) to convert the VUV light into visible light. TPB requires stringent storage and operational conditions to prevent its degradation by environmental agents. The development of UV sensitive SiPMs is thus of utmost interest for experiments using electroluminescence of noble-gas detectors. It is in particular an important issue for a robust and background free ββ0ν experiment with xenon gas aimed by NEXT. The photon detection efficiency (PDE) of UV-enhanced SiPMs provided by Hamamatsu was determined for light in the range 250-500 nm. The PDE of standard SiPMs of the same model (S10362-33-50C), coated and non-coated with TPB, was also determined for comparison. In the UV range 250-350 nm, the PDE of the standard SiPM is shown to decrease strongly, down to about 3%. The UV-enhanced SiPM without window is shown to have the maximum PDE of 44% at 325 nm and 30% at 250 nm. The PDE of the UV-enhanced SiPM with silicon resin window has a similar trend in the UV range, although it is about 30% lower. The TPB-coated SiPM has shown to have about 6 times higher PDE than the non-coated SiPM in the range 250-315 nm. This is however below the performance of the UV-enhanced prototypes in the same wavelength range. Imaging in noble-gas detectors using UV-enhanced SiPMs is discussed.

  20. Imaging with SiPMs in noble-gas detectors

    International Nuclear Information System (INIS)

    Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive photosensors for imaging. However they are insensitive to the VUV scintillation emitted by the noble gases (xenon and argon). This difficulty is overcome in the NEXT experiment by coating the SiPMs with tetraphenyl butadiene (TPB) to convert the VUV light into visible light. TPB requires stringent storage and operational conditions to prevent its degradation by environmental agents. The development of UV sensitive SiPMs is thus of utmost interest for experiments using electroluminescence of noble-gas detectors. It is in particular an important issue for a robust and background free ββ0ν experiment with xenon gas aimed by NEXT. The photon detection efficiency (PDE) of UV-enhanced SiPMs provided by Hamamatsu was determined for light in the range 250–500 nm. The PDE of standard SiPMs of the same model (S10362-33-50C), coated and non-coated with TPB, was also determined for comparison. In the UV range 250–350 nm, the PDE of the standard SiPM is shown to decrease strongly, down to about 3%. The UV-enhanced SiPM without window is shown to have the maximum PDE of 44% at 325 nm and 30% at 250 nm. The PDE of the UV-enhanced SiPM with silicon resin window has a similar trend in the UV range, although it is about 30% lower. The TPB-coated SiPM has shown to have about 6 times higher PDE than the non-coated SiPM in the range 250–315 nm. This is however below the performance of the UV-enhanced prototypes in the same wavelength range. Imaging in noble-gas detectors using UV-enhanced SiPMs is discussed.

  1. Study of point defect detectors in Si

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    The importance of point defects in semiconductor and functionmaterials has been studied indetail, but effective means for detecting point defects has not been available for a long time.Theend of range defects in Si, produced by 140 keV Ge+ implantation,were investigated as detectorsfor measuring the interstitial concentration created by 42 keV B+ implantation.The concentrationof interstitial resulting from the B+ implantation and the behaviorof the interstitial flux underdifferent annealing condition were given. The enhanced diffusion in the borondoped EPI marker,resulting from mobile non-equilibrium interstitials wasdemonstrated to be transient. Interstitialfluxes arising from processing can be detected bytransient enhanced diffusion (TED) of dopedmarker layers as well.

  2. Oscillations above the barrier in the fusion of 28Si + 28Si

    Directory of Open Access Journals (Sweden)

    G. Montagnoli

    2015-06-01

    Full Text Available Fusion cross sections of 28Si + 28Si have been measured in a range above the barrier with a very small energy step (ΔElab=0.5 MeV. Regular oscillations have been observed, best evidenced in the first derivative of the energy-weighted excitation function. For the first time, quite different behaviors (the appearance of oscillations and the trend of sub-barrier cross sections have been reproduced within the same theoretical frame, i.e., the coupled-channel model using the shallow M3Y + repulsion potential. The calculations suggest that channel couplings play an important role in the appearance of the oscillations, and that the simple relation between a peak in the derivative of the energy-weighted cross section and the height of a centrifugal barrier is lost, and so is the interpretation of the second derivative of the excitation function as a barrier distribution for this system, at energies above the Coulomb barrier.

  3. Position sensitive SiPM detector for Cherenkov applications

    CERN Document Server

    Gruber, L; Brunner, S E; Bühler, P; Marton, J; Suzuki, K

    2011-01-01

    A prototype of a position sensitive photo-detector with 5.6 x 5.6 cm2 detection area readout with 64 Hamamatsu MPPCs (S10931-100P) with 3 x 3 mm2 active area each has been built and tested. The photo-sensors are arranged in a 8 x 8 array with a quadratic mirror light guide on top. The module is currently readout by in-house developed preamplifier boards but employing existing ASIC chips optimized for SiPM readout is also planned. Such a device is one of the candidates to be used for photon detection in the PANDA DIRC detectors.

  4. Imaging with SiPMs in noble-gas detectors

    CERN Document Server

    Yahlali, N; González, K; Garcia, A N C; Soriano, A

    2012-01-01

    Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive photosensors for imaging but they are insensitive to the VUV scintillation emitted by the noble gases (xenon and argon). This difficulty is overcome in the NEXT experiment by coating the SiPMs with tetraphenyl butadiene (TPB) to convert the VUV light into visible light. TPB requires stringent storage and operational conditions to prevent its degradation by environmental agents. The development of UV sensitive SiPMs is thus of utmost interest for experiments using UV light and for noble-gas detectors. It is in particular an important issue for a robust and background free neutrinoless double-beta decay experiment with xenon gas aimed by NEXT. The photon detection efficiency (PDE) of UV-enhanced SiPMs without protective window and with silicon resin window provided by Hamamatsu was det...

  5. Property Evaluation and Damage Evolution of Environmental Barrier Coatings and Environmental Barrier Coated SiC/SiC Ceramic Matrix Composite Sub-Elements

    Science.gov (United States)

    Zhu, Dongming; Halbig, Michael; Jaskowiak, Martha; Hurst, Janet; Bhatt, Ram; Fox, Dennis S.

    2014-01-01

    This paper describes recent development of environmental barrier coatings on SiC/SiC ceramic matrix composites. The creep and fatigue behavior at aggressive long-term high temperature conditions have been evaluated and highlighted. Thermal conductivity and high thermal gradient cyclic durability of environmental barrier coatings have been evaluated. The damage accumulation and complex stress-strain behavior environmental barrier coatings on SiCSiC ceramic matrix composite turbine airfoil subelements during the thermal cyclic and fatigue testing of have been also reported.

  6. Phase Stability and Thermal Conductivity of Composite Environmental Barrier Coatings on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Benkel, Samantha; Zhu, Dongming

    2011-01-01

    Advanced environmental barrier coatings are being developed to protect SiC/SiC ceramic matrix composites in harsh combustion environments. The current coating development emphasis has been placed on the significantly improved cyclic durability and combustion environment stability in high-heat-flux and high velocity gas turbine engine environments. Environmental barrier coating systems based on hafnia (HfO2) and ytterbium silicate, HfO2-Si nano-composite bond coat systems have been processed and their stability and thermal conductivity behavior have been evaluated in simulated turbine environments. The incorporation of Silicon Carbide Nanotubes (SiCNT) into high stability (HfO2) and/or HfO2-silicon composite bond coats, along with ZrO2, HfO2 and rare earth silicate composite top coat systems, showed promise as excellent environmental barriers to protect the SiC/SiC ceramic matrix composites.

  7. Creep Behavior of Hafnia and Ytterbium Silicate Environmental Barrier Coating Systems on SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Fox, Dennis S.; Ghosn, Louis J.; Harder, Bryan

    2011-01-01

    Environmental barrier coatings will play a crucial role in future advanced gas turbine engines because of their ability to significantly extend the temperature capability and stability of SiC/SiC ceramic matrix composite (CMC) engine components, thus improving the engine performance. In order to develop high performance, robust coating systems for engine components, appropriate test approaches simulating operating temperature gradient and stress environments for evaluating the critical coating properties must be established. In this paper, thermal gradient mechanical testing approaches for evaluating creep and fatigue behavior of environmental barrier coated SiC/SiC CMC systems will be described. The creep and fatigue behavior of Hafnia and ytterbium silicate environmental barrier coatings on SiC/SiC CMC systems will be reported in simulated environmental exposure conditions. The coating failure mechanisms will also be discussed under the heat flux and stress conditions.

  8. Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

    Science.gov (United States)

    Rahmani, Faezeh; Khosravinia, Hossein

    2016-08-01

    Theoretical studies on the optimization of Silicon (Si) parameters as the base of betavoltaic battery have been presented using Monte Carlo simulations and the state equations in semiconductor to obtain maximum power. Si with active area of 1 cm2 has been considered in p-n junction and Schottky barrier structure to collect the radiation induced-charge from 10 mCi cm-2 of Nickle-63 (63Ni) Source. The results show that the betavoltaic conversion efficiency in the Si p-n structure is about 2.7 times higher than that in the Ni/Si Schottky barrier structure.

  9. Response function of semiconductor detectors, Ge and Si(Li); Funcao resposta de detectores semicondutores, Ge e Si(Li)

    Energy Technology Data Exchange (ETDEWEB)

    Zevallos Chavez, Juan Yury

    2003-07-01

    The Response Function (RF) for Ge and Si(Li) semiconductor detectors was obtained. The RF was calculated for five detectors, four Hp Ge with active volumes of 89 cm{sup 3} , 50 cm{sup 3} , 8 cm{sup 3} and 5 cm{sup 3}, and one Si(Li) with 0.143 cm{sup 3} of active volume. The interval of energy studied ranged from 6 keV up to 1.5 MeV. Two kinds of studies were done in this work. The first one was the RF dependence with the detection geometry. Here the calculation of the RF for a geometry named as simple and an extrapolation of that RF, were both done. The extrapolation process analyzed both, spectra obtained with a shielding geometry and spectra where the source-detector distance was modified. The second one was the RF dependence with the detection electronics. This study was done varying the shaping time of the pulse in the detection electronics. The purpose was to verify the effect of the ballistic deficit in the resolution of the detector. This effect was not observed. The RF components that describe the region of the total absorption of the energy of the incident photons, and the partial absorption of this energy, were both treated. In particular, empirical functions were proposed for the treatment of both, the multiple scattering originated in the detector (crystal), and the photon scattering originated in materials of the neighborhood of the crystal. Another study involving Monte Carlo simulations was also done in order to comprehend the photon scattering structures produced in an iron shield. A deconvolution method is suggested, for spectra related to scattered radiation in order to assess the dose delivered to the scatterer. (author)

  10. Cryogenic Si detectors for ultra radiation hardness in SLHC environment

    International Nuclear Information System (INIS)

    Radiation hardness up to 1016 neq/cm2 is required in the future HEP experiments for most inner detectors. However, 1016 neq/cm2 fluence is well beyond the radiation tolerance of even the most advanced semiconductor detectors fabricated by commonly adopted technologies: the carrier trapping will limit the charge collection depth to an effective range of 20-30 μm regardless of depletion depth. Significant improvement of the radiation hardness of silicon sensors has been taken place within RD39. Fortunately the cryogenic tool we have been using provides us a convenient way to solve the detector charge collection efficiency (CCE) problem at SLHC radiation level (1016 neq/cm2). There are two key approaches in our efforts: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (≤230 K); and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the LN2 temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures. In this approach, we intend to study the trapping effect at temperatures below LN2 temperature. A freeze-out of trapping can certainly help in the development of ultra-radiation hard Si detectors for SLHC. A detector CCE measurement system using ultra-fast picosecond laser with a He cryostat has been built at CERN. This system can be used to find out the practical cryogenic temperature range that can be used to freeze out the radiation

  11. Performance of bulk SiC radiation detectors

    CERN Document Server

    Cunningham, W; Lamb, G; Scott, J; Mathieson, K; Roy, P; Bates, R; Thornton, P; Smith, K M; Cusco, R; Glaser, M; Rahman, M

    2002-01-01

    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I-V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for alpha radiation. By measuring ...

  12. Silicon surface barrier detectors with oxide passivation pn-junctions

    International Nuclear Information System (INIS)

    It is shown that for protection of silicon detectors of nuclear radiations oxide layers could be used. They are produced by thermal oxidation of silicon. Their properties and constructions are described. It was proved that protection properties of such detectors were conserved during long storage under wet-bulb atmosphere. Detectors without protection layer worsened their characteristics. 2 figs., 4 refs. (author)

  13. Diffusion barrier and adhesion properties of SiO(x)N(y) and SiO(x) layers between Ag/polypyrrole composites and Si substrates.

    Science.gov (United States)

    Horváth, Barbara; Kawakita, Jin; Chikyow, Toyohiro

    2014-06-25

    This paper describes the interface reactions and diffusion between silver/polypyrrole (Ag/PPy) composite and silicon substrate. This composite material can be used as a novel technique for 3D-LSI (large-scale integration) by the fast infilling of through-silicon vias (TSV). By immersion of the silicon wafer with via holes into the dispersed solution of Ag/PPy composite, the holes are filled with the composite. It is important to develop a layer between the composite and the Si substrate with good diffusion barrier and adhesion characteristics. In this paper, SiOx and two types of SiOxNy barrier layers with various thicknesses were investigated. The interface structure between the Si substrate, the barrier, and the Ag/PPy composite was characterized by transmission electron microscopy. The adhesion and diffusion properties of the layers were established for Ag/PPy composite. Increasing thickness of SiOx proved to permit less Ag to transport into the Si substrate. SiOxNy barrier layers showed very good diffusion barrier characteristics; however, their adhesion depended strongly on their composition. A barrier layer composition with good adhesion and Ag barrier properties has been identified in this paper. These results are useful for filling conductive metal/polymer composites into TSV. PMID:24869419

  14. Drift power supply for Si(Li) detector

    International Nuclear Information System (INIS)

    A drift power supply for Si(Li) detector has been developed, which is completely different from many other power supplies for common use. The drift power supply provides the most extensive useful voltage range of 0∼1000 V, and is continuously adjustable. It has good stability, constant power and compact structure, and the maximum output current is 100 mA. Since SCR's (silicon-controlled-rectifier) with trigger diodes and other new components are adopted and a power restriction circuit is considered in design, so during the operation when the resistance rate of silicon pieces in drifting process changes with the temperature, the power remains constant. The lower the resistance rate when the temperature raises, the higher the drift current and lower the voltage on the silicon piece. On the contrast, the higher the resistance rate when the temperature lowers, the lower the drift current, and higher the voltage on the silicon piece. Forty pieces of Si(Li) detector have been successfully drifted by using this drift power supply

  15. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    Directory of Open Access Journals (Sweden)

    Negin Golshani

    2014-10-01

    Full Text Available In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN layer deposited by reactive sputtering in a mixture of Ar/N2, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer.

  16. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications

    International Nuclear Information System (INIS)

    In this paper, optimization of the process flow for PureB detectors is investigated. Diffusion barrier layers between a boron layer and the aluminum interconnect can be used to enhance the performance and visual appearance of radiation detectors. Few nanometers-thin Zirconium Nitride (ZrN) layer deposited by reactive sputtering in a mixture of Ar/N2, is identified as a reliable diffusion barrier with better fabrication process compatibility than others. The barrier properties of this layer have been tested for different boron layers deposited at low and high temperatures with extensive optical microscopy analyses, electron beam induced current, SEM, and electrical measurements. This study demonstrated that spiking behavior of pure Al on Si can be prevented by the thin ZrN layer thus improving the performance of the radiation detectors fabricated using boron layer

  17. Measuring variation of indoor radon concentration using bare nuclear tracks detectors, scintillation counters and surface barrier detectors

    International Nuclear Information System (INIS)

    Bare LRI 15 nuclear track detectors , scintillators counter and surface barrier detectors were used to measured the indoor radon concentration in various location within two rooms. Spatial variation of the radon concentration is caused by positioning of the door, windows, furniture, cracks in the building and also distances from floor, wall and ceiling. It is found that the change in temperature are causing radon concentration to increase at certain time of the day

  18. Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si{sub 1-x}Ge{sub x}/Si resonant tunneling diode

    Energy Technology Data Exchange (ETDEWEB)

    Kawashima, Tomoyuki [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Sakuraba, Masao, E-mail: sakuraba.masao@myad.jp [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Murota, Junichi [Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2014-04-30

    Nitrogen atomic-layer (N AL) doping effects upon hole tunneling characteristics of double 4 nm-thick Si barriers in the strained Si{sub 1−x}Ge{sub x}/Si(100) hole resonant tunneling diode (RTD) were investigated. At a Si cap layer on Si{sub 1−x}Ge{sub x}(100) (x = 0.2 and 0.4) formed at 500 °C, it was found that NH{sub 3} reaction was drastically enhanced at 500 °C especially at the Si cap layer thickness less than 0.5 nm, and the fact indicates a possibility of significant intermixing at the Si/Si{sub 1−x}Ge{sub x} heterointerface. From current–voltage characteristics of the RTDs, drastic current suppression by N AL doping in the Si barriers can be observed with typical degree of current suppression as high as 10{sup 3}–10{sup 5} at − 10 mV. Moreover, it was found that N AL doping influences, not only upon such current suppression, but slightly upon negative differential conductance characteristics. - Highlights: • NH{sub 3} reaction enhancement on a thin Si cap layer on Si{sub 1−x}Ge{sub x}(100). • Drastic current suppression by N atomic-layer doping in Si barriers. • N atomic-layer doping effect upon negative differential conductance characteristics.

  19. Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: Recent Advances and Future Directions

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    This presentation briefly reviews the SiC/SiC major environmental and environment-fatigue degradations encountered in simulated turbine combustion environments, and thus NASA environmental barrier coating system evolution for protecting the SiC/SiC Ceramic Matrix Composites for meeting the engine performance requirements. The presentation will review several generations of NASA EBC materials systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. This paper will also focus on the performance requirements and design considerations of environmental barrier coatings for next generation turbine engine applications. The current development emphasis is placed on advanced NASA candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. The efforts have been also directed to developing prime-reliant, self-healing 2700F EBC bond coat; and high stability, lower thermal conductivity, and durable EBC top coats. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance will be described. The research and development opportunities for turbine engine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be briefly discussed.

  20. Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

    Directory of Open Access Journals (Sweden)

    Hassan Maktuff Jaber Al-Ta'ii

    2015-02-01

    Full Text Available Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al/DNA/silicon (Si rectifying junctions using their current-voltage (I-V characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0 was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min. These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors.

  1. Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yeganeh, M. A. [Faculty of Physics, Baku State University, Academic Zahid Xalilov-23, AZ 1148, Baku (Azerbaijan); Rahmatollahpur, S. H., E-mail: rahmatsh@bnrc.i [Departments of Physics, Sharif University of Technology, 11365-9567, Tehran (Iran, Islamic Republic of)

    2010-07-15

    Small high-quality Au/P-Si Schottky barrier diodes (SBDs) with an extremely low reverse leakage current using wet lithography were produced. Their effective barrier heights (BHs) and ideality factors from current-voltage (I-V) characteristics were measured by a conducting probe atomic force microscope (C-AFM). In spite of the identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters. By extrapolating the plots the built in potential of the Au/p-Si contact was obtained as V{sub bi} = 0.5425 V and the barrier height value {Phi}{sub B(C-V)} was calculated to be {Phi}{sub B(C-V)} = 0.7145 V for Au/p-Si. It is found that for the diodes with diameters smaller than 100 {mu}m, the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear, where similar to the earlier reported different metal semiconductor diodes in the literature, these parameters for the here manufactured diodes with diameters more than 100 {mu}m are also linear. Based on the very obvious sub-nanometer C-AFM produced pictures the scientific evidence behind this controversy is also explained.

  2. Charge collection efficiency mapping of interdigitated 4H-SiC detectors

    CERN Document Server

    Vittone, E; Pastuovic, Z; Olivero, P; Jaksic, M

    2016-01-01

    The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent consistency between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.

  3. Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

    Institute of Scientific and Technical Information of China (English)

    Zhou Mei-Li; Fu Ya-Bo; Chen Qiang; Ge Yuan-Jing

    2007-01-01

    This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of O2/Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared,water wpour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the O2/TMDSO ratio exceeding 2:1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.

  4. SiC detector damage and characterization for high intensity laser-plasma diagnostics

    Science.gov (United States)

    Torrisi, L.; Cannavò, A.

    2016-05-01

    Silicon-Carbide (SiC) detectors are always more extensively employed as diagnostics in laser-generated plasma due to their remarkable properties such as their high band gap, high carrier velocity, high detection efficiency, high radiation resistance and low leakage current at room temperature. SiC detectors, in comparison with Si detectors, have the advantage of being insensitive to visible light, having low reverse current at high temperature and high radiation hardness. A similar energy resolution characterizes the two types of detectors, being 0.8% in Si and 1.0% in SiC, as measured detecting 5.8 MeV alpha particles. Generally, SiC detectors are employed as laser-plasma diagnostics in time-of-flight configuration, permitting the simultaneous detection of photons, electrons and ions based on discrimination of velocity. SiC detectors can be employed in the proportionality regime, because their response is proportional to the radiation energy deposited in the active layer. Using thin absorbers in front of the detectors makes it possible to have further information on the radiation nature, intensity and energy. Surface characterization of SiC before and after prolonged exposure to hot plasma laser generated shows the formation of bulk defects and thin film deposition on the detector surface limiting the device functionality.

  5. First large scale application of novel Si stripixel detector in real large experiment: Si VTX in PHENIX upgrade at RHIC

    Institute of Scientific and Technical Information of China (English)

    LI Zheng; H. ENYO; Y. GOTO; J. TOJO; Y. AKIBA; R. NOUICER; A. L. DESHPANDE; K. BOYLE; V. CIANCIOLO

    2006-01-01

    2D position sensitive,single-sided Si stripixel detector was selected as the one of the two main components of the Si vertex tracker (Si SVX) in the upgraded PHENIX detector at RHIC (relativistic heavy ion collider) in Brookhaven National Laboratory (BNL). This is the first large scale application of the novel Si stripixel detector in a real large experiment after many years of research and development at BNL. The first and second prototype fabrication runs of the SVX stripixel detectors were carried out successfully in BNL's Si detector development and processing Lab. The processing of these stripixel detectors is similar to that for the standard single-sided strip detectors: one-sided processing,single implant for the pixel (strip) electrodes,etc. The only additional processing step is the double metal process,a technology that is simple and well matured by many Si detector processing industries and labs,including BNL. The laser and beam tests on those prototype detectors show the 2D position sensitivity and good position resolution in both X and U coordinates (about 25 μm for 80 μm pitch). For the mass production of 400 sensors needed for the Si SVX,the processing technology has been successfully transferred to the industrial: Hamamatsu Photonics (HPK). HPK has produced a pre-production run of stripixel sensors with the full PHENIX SVX specification on 150 mm diameter wafers. The laser tests on these pre-production wafers show good signal to noise ratio (about 20:1).

  6. Fast SiPM Readout of the PANDA TOF Detector

    Science.gov (United States)

    Böhm, M.; Lehmann, A.; Motz, S.; Uhlig, F.

    2016-05-01

    For the identification of low momentum charged particles and for event timing purposes a barrel Time-of-Flight (TOF) detector surrounding the interaction point is planned for the PANDA experiment at FAIR . Since the boundary conditions in terms of available radial space and radiation length are quite strict the favored layout is a hodoscope composed of several thousand small scintillating tiles (SciTils) read out by silicon photomultipliers (SiPMs). A time resolution of well below 100 ps is aimed for. With the originally proposed 30 × 30 × 5 mm3 SciTils read out by two single 3 × 3 mm2 SiPMs at the rims of the scintillator the targeted time resolution can be just reached, but with a considerable position dependence across the scintillator surface. In this paper we discuss other design options to further improve the time resolution and its homogeneity. It will be shown that wide scintillating rods (SciRods) with a size of, e.g., 50 × 30 × 5 mm3 or longer and read out at opposite sides by a chain of four serially connected SiPMs a time resolution down to 50 ps can be reached without problems. In addition, the position dependence of the time resolution is negligible. These SciRods were tested in the laboratory with electrons of a 90Sr source and under real experimental conditions in a particle beam at CERN. The measured time resolutions using fast BC418 or BC420 plastic scintillators wrapped in aluminum foil were consistently between 45 and 75 ps dependent on the SciRod design. This is a significant improvement compared to the original SciTil layout.

  7. Si, CdTe and CdZnTe radiation detectors for imaging applications

    OpenAIRE

    Schulman, Tom

    2006-01-01

    The structure and operation of CdTe, CdZnTe and Si pixel detectors based on crystalline semiconductors, bump bonding and CMOS technology and developed mainly at Oy Simage Ltd. And Oy Ajat Ltd., Finland for X- and gamma ray imaging are presented. This detector technology evolved from the development of Si strip detectors at the Finnish Research Institute for High Energy Physics (SEFT) which later merged with other physics research units to form the Helsinki Institute of Physics (HIP). General ...

  8. Simulations of Photon Detection in SiPM Number-Resolving Detectors

    OpenAIRE

    Dovrat, L.; Bakstein, M.; Istrati, D.; Eisenberg, H. S.

    2011-01-01

    Number-resolving single photon detectors are essential for the implementation of numerous innovative quantum information schemes. While several number-discriminating techniques have been previously presented, the Silicon Photo-Multiplier (SiPM) detector is a promising candidate due its rather simple integration in optical setups. On the other hand, the photon statistics obtained with the SiPM detector suffer from inaccuracies due to inherent distortions which depend on the geometrical propert...

  9. POSSuMUS: a position sensitive scintillating muon SiPM detector

    CERN Document Server

    Ruschke, Alexander

    The development of a modular designed large scale scintillation detector with a two-dimensional position sensitivity is presented in this thesis. This novel POsition Sensitive Scintillating MUon SiPM Detector is named POSSuMUS. The POSSuMUS detector is capable to determine the particle’s position in two space dimensions with a fast trigger capability. Each module is constructed from two trapezoidal shaped plastic scintillators to form one rectangular shaped detector module. Both trapezoids are optically insulated against each other. In both trapezoids the scintillation light is collected by plastic fibers and guided towards silicon photomultipliers (SiPMs). SiPMs are light sensors which are capable to detect even smallest amounts of light. By combining several detector modules, position sensitive areas from 100 cm2 to few m2 are achievable with few readout channels. Therefore, POSSuMUS provides a cost effective detector concept. The position sensitivity along the trapezoidal geometry of one detector module ...

  10. Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes

    Institute of Scientific and Technical Information of China (English)

    王守国; 杨林安; 张义门; 张玉明; 张志勇; 闫军锋

    2003-01-01

    This paper describes the fabrication and characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs).SBDs are fabricated by nitrogen ion implantation into p-type 4H-SiC epitaxial layer. The implant depth profile is simulated using the Monte Carlo simulator TRIM. Measurements of the reverse I-V characteristics demonstrate a low reverse current, that is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors,and SiC static induction transistors. The parameters of the diodes are extracted from the forward I-V characteristics.The barrier height b of Ti/4H-SiC is 0.95 eV.

  11. Temperature-dependent characteristics of 4H—SiC junction barrier Schottky diodes

    Science.gov (United States)

    Chen, Feng-Ping; Zhang, Yu-Ming; Zhang, Yi-Men; Tang, Xiao-Yan; Wang, Yue-Hu; Chen, Wen-Hao

    2012-03-01

    The current—voltage characteristics of 4H—SiC junction barrier Schottky (JBS) diodes terminated by an offset field plate have been measured in the temperature range of 25-300 °C. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H—SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.

  12. Novel Gas Barrier SiOC Coating to PET Bottles through a Hot Wire CVD Method

    OpenAIRE

    Nakaya, Masaki; Kodama, Kenji; Yasuhara, Shigeo; Hotta, Atsushi

    2016-01-01

    In an attempt to enhance the gas barrier enhancement of plastic containers such as poly(ethylene terephthalate) bottles, a novel method was found using a hot wire CVD technique, where tantalum wire is heated and exposed to a gas flow of vinyl silane. The resultant SiOC thin film was confirmed to characteristically contain Si-Si bonds in its surface and demonstrate a remarkably and highly practical decrease of the permeation of various gas through poly(ethylene terephthalate) bottles.

  13. SiO2 as gas barrier and nano holes in SiO2 flakes

    International Nuclear Information System (INIS)

    Sublimation of SiO is used to protect PVD aluminium flakes from water corrosion and to generate highly porous SiO2 flakes with holes in the nanometer range. SiOx/Al/SiOx sandwiches were made as well as Ag loaded porous SiO2 as antimicrobial filler

  14. Analysis of uniformity of as prepared and irradiated S.I. GaAs radiation detectors

    International Nuclear Information System (INIS)

    SI (semi-insulating) LEC (Liquid Encapsulated Czochralsky) GaAs (gallium arsenide) Schottky barrier detectors have been irradiated with high energy protons (24 GeV/c, fluence up to 16.45 x 1013 p/cm2). The detectors have been characterized in terms of I/V curves, charge collection efficiency (cce) for incident 5.48 MeV α-, 2 MeV proton and minimum ionizing β-particles and of cce maps by microprobe technique IBIC (Ion Beam Induced Charge). At the highest fluence a significant degradation of the electron and hole collection efficiencies and a remarkable improvement of the Full Width Half Maximum (FWHM) energy resolution have been measured with α- and proton particles. Furthermore, the reduction in the cce is greater than the one measured with β-particles and the energy resolution worsens with increasing the applied bias, Va, above the voltage Vd necessary to extend the electric field al the way to the ohmic contact. On the contrary, in the unirradiated detectors the charge collection efficiencies with α-, β- and proton particles are quite similar and the energy resolution improves with increasing Va > Vd. IBIC spectra and IBIC space maps obtained by scanning a focused (8 microm2) 2 MeV proton microbeam on front (Schottky) and back (ohmic) contacts, support the observed electric field dependence of the energy resolution both in unirradiated and most irradiated detectors. The results obtained let them explain the effect of the electric field strength and the plasma on the collection of the charge carriers and the FWHM energy resolution

  15. Effect of Annealing Ambience on the Chemical Stability of Zr-Si-N Diffusion Barrier

    Institute of Scientific and Technical Information of China (English)

    SONG Zhong-xiao; WANG Yuan; XU Ke-wei; LIU Chun-liang

    2004-01-01

    Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 gas mixture at 800℃, respectively. The structure of the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and four-point probe method. The sheet resistances of the Cu/Zr-Si-N/Si contact systems annealed in N2/H2 gas mixture were lower than those of the specimens annealed in vacuum at 800℃. The residual oxygen contamination from vacuum annealing ambience influences the sheet resistances of the Cu/Zr-Si-N/Si contact systems due to residual oxygen contamination and/or voids in Cu films. Though thermal stabilities of the Cu/Zr-Si-N/Si systems were maintained up to 800℃ when annealed in vacuum and N2/H2 gas mixture, the changes of thermal stability of specimens were noticeable. The vacuum can accelerate the oxidation and decomposition of Zr-Si-N barrier. On the contrary, N2/H2 gas mixture prevent from the Zr-Si-N barrier oxidation and decomposition.

  16. Effect of Annealing Ambience on the Chemical Stability of Zr-Si-N Diffusion Barrier

    Institute of Scientific and Technical Information of China (English)

    SONGZhong-xiao; WANGYuan; XUKe-wei; LIUChun-liang

    2004-01-01

    Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N2/H2 gasmixture at 800℃, respectively. The structure of the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and four-point probe method. The sheet resistances of the Cu/Zr-Si-N/Si contact systems annealed in N2/H2 gas mixture were lower than those of the specimens annealed in vacuum at 800℃. The residual oxygen contamination from vacuum annealing ambience influences the sheet resistances of the Cu/Zr-Si-N/Si contact systems due to residual oxygen contamination and/or voids in Cu films. Though thermal stabilities of the Cu/Zr-Si-N/Si systems were maintained up to 800℃ when annealed in vacuum and N2/H2 gas mixture, the changes of thermal stability of specimens were noticeable. The vacuum can accelerate the oxidation and decomposition of Zr-Si-N barrier. On the contrary, N2/H2 gas mixture prevent from the Zr-Si-N barrier oxidation and decomposition.

  17. Si(Li) x-ray detectors with amorphous silicon passivation

    International Nuclear Information System (INIS)

    Lithium-drifted silicon [Si(Li)] detectors with thin lithium n+ contacts and amorphous silicon (α-Si) junction passivation are described. These detectors (7 mm thick, 9 cm2 area) are intended for use in a six element detector array which is designed to measure trace amounts of plutonium in soil samples. Results are given showing a spectral resolution of approx. 400 eV (FWHM) for the 17.8 keV N/sub p/ L x-rays entering through either these detectors. Measurements on the effects of the fractional H2 concentration on the electrical behavior of the α-Si/Si interface are reported. The increase with time in the lithium window thickness when the detectors are stored at room temperature is discussed

  18. Experimental study on the 1/f noise in surface-barrier particle detectors

    International Nuclear Information System (INIS)

    The results of experimental investigations of the 1/f noise origins in a surface-barrier particle detector are presented. In these experiments an ordinary surface-barrier detector provided with a reasonably designed guard-ring was used. The measurements of the noise spectra were performed in the ''floating'' and ''balanced'' guard-ring conditions. This way two components of the 1/f noise were determined: the noise occuring due to the surface phenomena, connected with the flow of the surface leakage current, and the noise originated in the bulk of semiconductor, caused by the mobility fluctuation of charge carriers. 9 refs., 5 figs., 2 tabs. (author)

  19. Dependency of barrier height and ideality factor on identically produced small Au/p-Si Schottky barrier diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yeganeh, M.A. [Faculty of Physics, Baku State University, Academic Zahid Xelilov kuecesi-23, AZ 1148 (Azerbaijan); Material School, POB 55515-196, Binab (Iran, Islamic Republic of); Rahmatollahpur, Sh. [Departments of Physics, Sharif University of Technology, 11365-9567, Tehran (Iran, Islamic Republic of); Material School, POB 55515-196, Binab (Iran, Islamic Republic of); Sadighi-Bonabi, R., E-mail: sadighi@sharif.i [Departments of Physics, Sharif University of Technology, 11365-9567, Tehran (Iran, Islamic Republic of); Mamedov, R. [Faculty of Physics, Baku State University, Academic Zahid Xelilov kuecesi-23, AZ 1148 (Azerbaijan)

    2010-08-15

    Small high-quality Au/p-Si Schottky barrier diodes (SBDs) with extremely low reverse leakage current using wet lithography were produced. Their effective barrier heights (BHs) and ideality factors from current-voltage (I-V) characteristics were measured by a conducting probe atomic force microscope (C-AFM). In spite of identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters. By extrapolating the plots the built-in potential of the Au/p-Si contact was obtained as V{sub bi}=0.5425 V and the barrier height value ({Phi}{sub B(C-V)}) was calculated to be {Phi}{sub B(C-V)}=0.7145 V for Au/p-Si for a typical 100 {mu}m diode diameters. In the present work the nonlinear dependency of BH and ideality factor on the diode diameter studied fundamentally and an experimental relation for this new behavior is derived. It is found that for the diodes with diameters smaller than 100 {mu}m the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear, which is similar to the earlier reported different metal semiconductor diodes in the literature, these parameters for the here manufactured diodes with diameters more than 100 {mu}m are also linear. Based on the very obvious sub-nanometer C-AFM produced pictures, the scientific evidence behind this controversy is also explained.

  20. Evaluation of the barrier capability of Zr-Si films with different substrate temperature for Cu metallization

    International Nuclear Information System (INIS)

    Barrier capability of Zr-Si diffusion barriers in Cu metallization has been investigated. Amorphous Zr-Si diffusion barriers were deposited on the Si substrates by RF reactive magnetron sputtering under various substrate temperatures. An increase in substrate temperature results in a slightly decreased deposition rate together with an increase in mass density. An increase in substrate temperature also results in grain growth as deduced from field emission scanning electron microscopy (FE-SEM) micrographs. X-ray diffraction (XRD) spectra and Auger electron spectroscopy (AES) depth profiles for Cu/Zr-Si(RT)/Si and Cu/Zr-Si(300 deg. C)/Si samples subjected to anneal at various temperatures show that the thermal stability was strongly correlated with the deposition temperature (consequently different density and chemical composition etc.) of the Zr-Si barrier layers. ZrSi(300 deg. C) with higher mass density make the Cu/Zr-Si(300 deg. C)/Si sample more stable. The appearance of Cu3Si in the Cu/Zr-Si/Si sample is attributed to the failure mechanism which may be associated with the diffusion of Cu and Si via the grain boundaries of the Zr-Si barriers.

  1. FIR Detectors/Cameras Based on GaN and Si Field-Effect Devices Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SETI proposes to develop GaN and Si based multicolor FIR/THz cameras with detector elements and readout, signal processing electronics integrated on a single chip....

  2. Uncooled Radiation Hard SiC Schottky VUV Detectors Capable of Single Photon Sensing Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize very large area, uncooled and radiative hard 4H-SiC VUV detectors capable of near single...

  3. Investigation of temperature dependent barrier height of Au/ZnO/Si schottky diodes

    International Nuclear Information System (INIS)

    In this study, temperature dependent current-voltage (I-V) measurements have been performed to investigate the inhomogeneity in the temperature dependent barrier heights of Au/ZnO/Si Schottky barrier diode in the temperature range 150 - 400K. The room temperature values for ideality factor and barrier height were found to be 2.9 and 0.60 eV respectively indicating the inhomogenity in the barrier heights of grown samples. The Richardson plot and ideality factor verses barrier height graph were also drawn to verified the discontinuity between Au and ZnO. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear Fap (n) plot to n= 1 has given a homogeneous barrier height of approximately 1.1 eV. Fap versus 1/T plot was drawn to obtain the values of mean barrier height for Au/ZnO/Si Schottky diode (1.1 eV) and standard deviation(ds) (0.02 V) at zero bais. (author)

  4. Resistance of 4H-SiC Schottky barriers at high forward-current densities

    International Nuclear Information System (INIS)

    The resistance of Schottky barriers based on 4H-SiC is experimentally determined at high forward-current densities. The measured resistance is found to be significantly higher than the resistance predicted by classical mechanisms of electron transport in Schottky contacts. An assumption concerning the crucial contribution of the tunnel-transparent intermediate oxide layer between the metal and semiconductor to the barrier resistance is proposed and partially justified

  5. 4H-SiC junction-barrier Schottky diodes with high forward current densities

    Science.gov (United States)

    Tone, Kiyoshi; Zhao, Jian H.; Weiner, Maurice; Pan, Menghan

    2001-07-01

    4H-SiC junction-barrier Schottky (JBS) diodes blocking 1000 V have been fabricated. I-V characteristics have been evaluated at room temperature and 255 °C in comparison with the Schottky barrier (SB) and pin diodes fabricated on the same wafer. While the low reverse leakage confirms the functioning of JBS, the high forward current densities of 630 and 210 A cm-2 at 4.0 V at room temperature and 255 °C, respectively, with only ~20% reduction from those of the SB diodes, clearly demonstrate that the SiC JBS diodes can be fabricated with acceptable sacrifice in the forward current capacities.

  6. Spontaneously intermixed Al-Mg barriers enable corrosion-resistant Mg/SiC multilayer coatings

    Science.gov (United States)

    Soufli, Regina; Fernández-Perea, Mónica; Baker, Sherry L.; Robinson, Jeff C.; Alameda, Jennifer; Walton, Christopher C.

    2012-07-01

    Magnesium/silicon carbide (Mg/SiC) has the potential to be the best-performing reflective multilayer coating in the 25-80 nm wavelength region but suffers from Mg-related corrosion, an insidious problem which completely degrades reflectance. We have elucidated the origins and mechanisms of corrosion propagation within Mg/SiC multilayers. Based on our findings, we have demonstrated an efficient and simple-to-implement corrosion barrier for Mg/SiC multilayers. The barrier consists of nanometer-scale Mg and Al layers that intermix spontaneously to form a partially amorphous Al-Mg layer and is shown to prevent atmospheric corrosion while maintaining the unique combination of favorable Mg/SiC reflective properties.

  7. POSSuMUS. A position sensitive scintillating muon SiPM detector

    International Nuclear Information System (INIS)

    The development of a modular designed large scale scintillation detector with a two-dimensional position sensitivity is presented in this thesis. This novel POsition Sensitive Scintillating MUon SiPM Detector is named POSSuMUS. The POSSuMUS detector is capable to determine the particle's position in two space dimensions with a fast trigger capability. Each module is constructed from two trapezoidal shaped plastic scintillators to form one rectangular shaped detector module. Both trapezoids are optically insulated against each other. In both trapezoids the scintillation light is collected by plastic fibers and guided towards silicon photomultipliers (SiPMs). SiPMs are light sensors which are capable to detect even smallest amounts of light. By combining several detector modules, position sensitive areas from 100 cm2 to few m2 are achievable with few readout channels. Therefore, POSSuMUS provides a cost effective detector concept. The position sensitivity along the trapezoidal geometry of one detector module is achieved by the path length dependent amount of detected light for crossing particles. The ratio of the light yields in both trapezoids is calculated. This value corresponds to the position of the particle traversing the detector. A spatial resolution in the order of several mm is foreseen. The position sensitivity along the scintillator module is determined by the propagation time of light to the SiPMs located on opposite sides of the detector. A spatial resolution of few cm is expected for this direction. The POSSuMUS detector is applicable as large area trigger detector with a two dimensional position information of crossing particles. This is suitable in detector tests of large area precesion detectors or for measuring the small angle scattering of cosmic muons. At the beginning of this thesis, the determination of important SiPM characteristics like the breakdown voltage is presented. In the course of this work the detector principle is proven by the

  8. Investigation on the preparation of Si/mullite/Yb_2Si_2O_7 environmental barrier coatings onto silicon carbide

    Institute of Scientific and Technical Information of China (English)

    许越; 闫钊通

    2010-01-01

    With the development of aero-engine,gas import temperatures of hot section structural materials are increasingly higher.Metal alloy materials due to the rapidly decreased mechanical properties at relative high temperature are gradually replaced with silicon-based non-oxide silicon carbide ceramics.However,silicon carbide ceramic materials tend to spall and deform in engine combustion environment,need environmental barrier coatings for the protection of the matrix.The preparation of Si/mullite/Yb2Si2O7 envir...

  9. Response of timepix detector with GaAs:Cr and Si sensor to heavy ions

    Science.gov (United States)

    Abu Al Azm, S. M.; Chelkov, G.; Kozhevnikov, D.; Guskov, A.; Lapkin, A.; Leyva Fabelo, A.; Smolyanskiy, P.; Zhemchugov, A.

    2016-05-01

    The response of the Timepix detector to neon ions with kinetic energy 77 and 158.4 MeV has been studied at the cyclotron U-400M of the JINR Flerov Laboratory of Nuclear Reaction. Sensors produced from gallium arsenide compensated by chromium and from silicon are used for these measurements. While in Timepix detector with Si sensor the well-known so-called "volcano effect" observed, in Timepix detector with GaAs:Cr sensor such effect was completely absent. In the work the behavior of the Timepix detector with GaAs:Cr sensor under irradiation with heavy ions is described in comparison with the detector based on Si sensor. Also the possible reason for absence of "volcano" effect in GaAs:Cr detector is proposed.

  10. Electronic system for spectra registration from 32-channel Si-stripe detector

    International Nuclear Information System (INIS)

    Electronic system for spectra registration from 32-channel Si-stripe detector is considered. The system allows to measuring of spectra by 32 channels simultaneously. For measuring of spectra on the main computer following parameters are fixed: test mode; time for all 32 channels measuring; high voltage device of the detector power supply; discrimination levels; resolution by channels (256, 612, or 1024); integrated counting

  11. Performance of SiPMT array readout for fast time-of-flight detectors

    International Nuclear Information System (INIS)

    Scintillator based time-of-flight detectors may use conventional photomultipliers for the readout. Problems arise in presence of stray magnetic fields. SiPMT arrays are insensitive to magnetic fields and are a suitable option to replace photomultipliers. Timing performances for several SiPMT arrays have been studied and results are presented

  12. 100ps time resolution with thin silicon pixel detectors and a SiGe HBT amplifier

    CERN Document Server

    Benoit, Mathieu; Débieux, Stéphane; Favre, Yannick; Iacobucci, Giuseppe; Nessi, Marzio; Paolozzi, Lorenzo; Shu, Kenji

    2016-01-01

    A 100um thick silicon detector with 1mm2 pad readout optimized for sub-nanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the H8 beam line at the CERN SPS. An excellent time resolution of (106+-1)ps for silicon detectors was measured with minimum ionizing particles.

  13. Cold performance tests of blocked-impurity-band Si:As detectors developed for DARWIN

    OpenAIRE

    Birkmann, Stephan M.; Stegmaier, Jutta; Groezinger, Ulrich; Krause, Oliver; Souverijns, Tim; Putzeys, Jan; Tezcan, Deniz Sabuncuoglu; De Munck, Koen; Fiorini, Paolo; Minoglou, Kiki; Merken, Patrick; Van Hoof, Chris; De Moor, Piet

    2008-01-01

    We report first results of laboratory tests of Si:As blocked-impurity-band (BIB) mid-infrared (4 to 28 um) detectors developed by IMEC. These prototypes feature 88 pixels hybridized on an integrated cryogenic readout electronics (CRE). They were developed as part of a technology demonstration program for the future DARWIN mission. In order to be able to separate detector and readout effects, a custom build TIA circuitry was used to characterize additional single pixel detectors. We used a new...

  14. Thermoluminescent characteristics of newly developed LiF:Mg,Cu,Na,Si TL detectors

    International Nuclear Information System (INIS)

    Recently, a new sintered pellet-type LiF:Mg,Cu,Na,Si TL detector which has a high sensitivity and good reusability, named KLT-300(KAERI LiF:Mg,Cu,Na,Si TL detector), was developed by the variation of the dopants concentrations and the parameters of the preparation procedure at KAERI(Korea Atomic Energy Research Institute). In this study, the thermoluminescent characteristics of the newly developed TL detectors were investigated. The sensitivity of the TL detector was compared with that of the TLD-100 by light integration. The dose linearity of the detector was tested from 10-6 Gy up to 30 Gy. The dose response was very linear up to 10 Gy and a sublinear response was observed at higher doses. The energy response of the detector was studied for photon energies from 20 keV to 662 keV. The result shows that a maximum response of 1.004 at 53 keV and a minimum response of 0.825 at 20 keV were observed. The reproducibility study for the TL detector was also carried out. The coefficients of variation for each detector separately did not exceed 0.016, and for all the 10 detectors collectively was 0.0054. Lower limit of detection for the detector was investigated at 70 nGy by the Harshaw 4500 TLD reader and the residual signal of the TL detector was found to be 0.57%

  15. Calibration of diffusion barrier charcoal detectors and application to radon sampling in dwellings

    Energy Technology Data Exchange (ETDEWEB)

    Montero C, M.E.; Colmenero S, L.; Villalba, L.; Saenz P, J.; Cano J, A.; Moreno B, A.; Renteria V, M.; Herrera P, E.F. [Cento de Investigacion en Materiales Avanzados, S. C. Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, (Mexico); Cruz G, S. De la [Facultad de Enfermeria y Nutriologia, Universidad Autonoma de Chihuahua, Av. Politecnico Nacional 2714, Chihuahua, (Mexico); Lopez M, A. [Instituto Nacional de Investigaciones Nucleares, Apartado Postal 18-1027, 11801 Mexico D.F. (Mexico)

    2003-07-01

    Some calibration conditions of diffusion barrier charcoal canister (DBCC) detectors for measuring radon concentration in air were studied. A series of functional expressions and graphs were developed to describe relationship between radon concentration in air and the activity adsorbed in DBCC, when placed in small chambers. A semi-empirical expression for the DBCC calibration was obtained, based on the detector integration time and the adsorption coefficient of radon on activated charcoal. Both, the integration time for 10 % of DBCC of the same batch, and the adsorption coefficient of radon for the activated charcoal used in these detectors, were experimentally determined. Using these values as the calibration parameters, a semi-empirical calibration function was used for the interpretation of the radon activities in the detectors used for sampling more than 200 dwellings in the major cities of the state of Chihuahua, Mexico. (Author)

  16. Calibration of diffusion barrier charcoal detectors and application to radon sampling in dwellings

    International Nuclear Information System (INIS)

    Some calibration conditions of diffusion barrier charcoal canister (DBCC) detectors for measuring radon concentration in air were studied. A series of functional expressions and graphs were developed to describe relationship between radon concentration in air and the activity adsorbed in DBCC, when placed in small chambers. A semi-empirical expression for the DBCC calibration was obtained, based on the detector integration time and the adsorption coefficient of radon on activated charcoal. Both, the integration time for 10 % of DBCC of the same batch, and the adsorption coefficient of radon for the activated charcoal used in these detectors, were experimentally determined. Using these values as the calibration parameters, a semi-empirical calibration function was used for the interpretation of the radon activities in the detectors used for sampling more than 200 dwellings in the major cities of the state of Chihuahua, Mexico. (Author)

  17. Fabrication and characterization of surface barrier detector from commercial silicon substrate

    International Nuclear Information System (INIS)

    This work used 5 silicon substrates, n-type with resistivity between 500-20,000 Ω.cm, with 12 mm diameter and 1 mm thickness, from Wacker - Chemitronic, Germany. To produce the surface barrier detectors, the substrates were first cleaned, then, they were etched with HNO3 solution. After this, a deposition of suitable materials on the crystal was made, to produce the desired population inversion of the crystal characteristics. The substrates received a 10 mm diameter gold contact in one of the surfaces and a 5 mm diameter aluminum in the other. The curves I x V and the energy spectra for 28 keV and 59 keV, for each of the produced detectors, were measured. From the 5 substrates, 4 of them resulted in detectors and one did not present even diode characteristics. The results showed that the procedures used are suitable to produce detectors with this type of silicon substrates. (author)

  18. Position sensitive detection of thermal neutrons with solid state detectors (Gd Si planar detectors)

    CERN Document Server

    Bruckner, G; Rauch, H; Weilhammer, P

    1999-01-01

    Recent advances in the technology of position sensitive silicon detectors and the corresponding electronics allow the construction of fast time response thermal neutron detectors. These detectors also exhibit excellent position resolution by combination of silicon detectors with thin Gd converter foils. We constructed several one- and two-dimensional prototype detectors, using DC and AC coupled silicon strip detectors, pad detectors and different VLSI readout electronics. The position resolution and the detector efficiency for different converters at wavelengths from 1.1 to 3.3 A were determined at the TRIGA reactor in Vienna and at the ILL in Grenoble. Spatial resolutions of less than 100 mu m and efficiencies up to 40% have been achieved. The results of these measurements are compared with a Monte Carlo simulation of the detector operation. These detectors can also be used for phase topography experiments using perfect crystal neutron interferometers. In certain cases an increase of the sensitivity in the o...

  19. Study of the characteristics of SiPMs matrix as a photosensor for the scintillation detectors

    CERN Document Server

    Dzaparova, I M; Gavrilyuk, Yu M; Petkov, V B; Sergeev, A V; Volchenko, V I; Yakimenko, S P; Yanin, A F

    2015-01-01

    The matrices formed of silicon photomultipliers (SiPMs) are very promising photosensors for the scintillation detectors. The use of SiPM matrices with appropriate optical collector gives, in principle, a possibility to do a snapshot of glowing track of charged particle traversing a scintillator. The prototype of such scintillation detector is under development now in INR RAS. The preliminary results of characterization study of the matrix ArrayC-60035-64P-PCB (SensL company) for the prototype of such detector are presented.

  20. Improvements in Realizing 4H-SiC Thermal Neutron Detectors

    Directory of Open Access Journals (Sweden)

    Issa F.

    2016-01-01

    Full Text Available In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2 both based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted 10B thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.

  1. Characterising a Si(Li) detector element for the SIXA X-ray spectrometer

    CERN Document Server

    Tikkanen, T; Scholze, F; Thornagel, R; Ulm, G

    1997-01-01

    The detection efficiency and response function of a Si(Li) detector element for the SIXA spectrometer have been determined in the 500 eV to 5 keV energy range using synchrotron radiation emitted at a bending magnet of the electron storage ring BESSY, which is a primary radiation standard. The agreement between the measured spectrum and the model calculation is better than 2%. PACS: 95.55.Ka; 07.85.Nc; 29.40.Wk; 85.30.De Keywords: Si(Li) detectors, X-ray spectrometers, detector calibration, X-ray response, spectral lineshape

  2. Study of PET Detector Performance with Varying SiPM Parameters and Readout Schemes

    OpenAIRE

    Li, Xiaoli; Lockhart, Cate; Lewellen, Tom K.; Miyaoka, Robert S.

    2011-01-01

    The spatial resolution performance characteristics of a monolithic crystal PET detector utilizing a sensor on the entrance surface (SES) design is reported. To facilitate this design, we propose to utilize a 2D silicon photomultiplier (SiPM) array device. Using a multi-step simulation process, we investigated the performance of a monolithic crystal PET detector with different data readout schemes and different SiPM parameters. The detector simulated was a 49.2mm by 49.2mm by 15mm LYSO crystal...

  3. Improvements in Realizing 4H-SiC Thermal Neutron Detectors

    Science.gov (United States)

    Issa, F.; Vervisch, V.; Ottaviani, L.; Szalkai, D.; Vermeeren, L.; Lyoussi, A.; Kuznetsov, A.; Lazar, M.; Klix, A.; Palais, O.; Hallén, A.

    2016-02-01

    In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted 10B thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.

  4. Novel Gas Barrier SiOC Coating to PET Bottles through a Hot Wire CVD Method

    Directory of Open Access Journals (Sweden)

    Masaki Nakaya

    2016-01-01

    Full Text Available In an attempt to enhance the gas barrier enhancement of plastic containers such as poly(ethylene terephthalate bottles, a novel method was found using a hot wire CVD technique, where tantalum wire is heated and exposed to a gas flow of vinyl silane. The resultant SiOC thin film was confirmed to characteristically contain Si-Si bonds in its surface and demonstrate a remarkably and highly practical decrease of the permeation of various gas through poly(ethylene terephthalate bottles.

  5. Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

    International Nuclear Information System (INIS)

    While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si0.8Ge0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si0.8Ge0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures

  6. Time and Amplitude Characteristics of Large Scintillation Detectors with SiPM

    Science.gov (United States)

    Kaplin, V. A.; Makliaev, E. F.; Melikyan, Yu. A.; Naumov, P. P.; Naumov, P. Yu.; Runtso, M. F.

    A large plastic scintillation detector system with silicon photomultiplier (SiPM) readout has been developed as a prototype for future astroparticle experiments' detectors. A set of SiPM connected in parallel was used in order to enlarge the light collection effective area and thus enhance the detector's amplitude and timing performance. Here we report on the values of time resolution and scintillation detection efficiency of such a system for different types of SiPM as a function of the distance between the scintillation strip edge with photomultipliers attached to it, and the penetrating particle. Results of a special simulation study of the system's amplitude and timing performance as a function of the SiPM radiation aging are also presented.

  7. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  8. Demonstration of a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess.

    Science.gov (United States)

    Fang, Qing; Jia, Lianxi; Song, Junfeng; Lim, Andy E J; Tu, Xiaoguang; Luo, Xianshu; Yu, Mingbin; Lo, Guoqiang

    2013-10-01

    In this paper, we demonstrate a vertical pin Ge-on-Si photo-detector on a wet-etched Si recess on a SOI wafer. A 120 nm-deep Si recess is etched on the SOI wafer with a 340 nm-thick top Si layer by the TMAH solution. The measured results show that the responsivity is more than 0.60 A/W for TE polarization and is more than 0.65 A/W for TM polarization at 1550 nm wavelength. Compared to the photo-detector without the Si recess, the responsivities for both TE and TM polarizations are improved by ~10%. A low dark current of 170 nA is achieved at a bias voltage of -1 V. And, the 3 dB-bandwidth at a bias voltage of -3 V is 21.5 GHz. This approach can be used to improve the coupling and absorption for high responsivity of photo-detector while maintain its high speed on a thick SOI platform based on the simulation results. PMID:24104246

  9. Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material

    Directory of Open Access Journals (Sweden)

    D. König

    2013-01-01

    Full Text Available Conventional doping of small nanodots does not provide majority carriers due to self-purification effects and much increased ionisation energies of dopants presenting point defects. Adjacent barrier layers to Si-rich Si3N4 can be doped by excess Si in-situ with the segregation anneal for Si nanodot formation. Donor doping of AlxGa1−xN (0 ⩽ x ⩽ 1 with Si is an established process. Material properties and process compatibility of AlxGa1−xN render it suitable as barrier for Si nanodot superlattices. Ab-initio calculations showed that Ge also works as a donor in AlN, extending the material range to Ge and SiGe nanodots in Si3N4.

  10. A personal thermoluminescence dosimeter using LiF:Mg,Cu,Na,Si detectors for photon fields

    International Nuclear Information System (INIS)

    A new personal thermoluminescence (TL) dosimeter for photon fields using LiF:Mg,Cu,Na,Si TL detector was developed by taking advantage of its dosimetric properties including energy dependencies. Solid pellet type LiF:Mg,Cu,Na,Si detector was developed and fabricated at Korea Atomic Energy Research Institute (KAERI) and has been studied on its dosimetric properties such as TL grow curve, dose response, energy response and reusability. Its dosimetric properties show the feasibility of application of LiF:Mg,Cu,Na,Si TL detector to personal dosimetry fields. A new dosimeter using LiF:Mg,Cu,Na,Si TL detector was designed and tested through irradiation experiments. This multi-element TL dosimeter allows the measurement of a personal dose equivalent Hp(d) in photon fields. Based on the experimental results of the proposed dosimeter, it was demonstrated that a personal TL dosimeter using sintered LiF:Mg,Cu,Na,Si TL detector is appropriate to estimate personal dose equivalent for wide range energy of photon fields

  11. Study the radiation damage effects in Si microstrip detectors for future HEP experiments

    Science.gov (United States)

    Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

    2016-07-01

    Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

  12. Study of PET Detector Performance with Varying SiPM Parameters and Readout Schemes.

    Science.gov (United States)

    Li, Xiaoli; Lockhart, Cate; Lewellen, Tom K; Miyaoka, Robert S

    2011-01-01

    The spatial resolution performance characteristics of a monolithic crystal PET detector utilizing a sensor on the entrance surface (SES) design is reported. To facilitate this design, we propose to utilize a 2D silicon photomultiplier (SiPM) array device. Using a multi-step simulation process, we investigated the performance of a monolithic crystal PET detector with different data readout schemes and different SiPM parameters. The detector simulated was a 49.2mm by 49.2mm by 15mm LYSO crystal readout by a 12 by 12 array of 3.8mm by 3.8mm SiPM elements. A statistics based positioning (SBP) method was used for event positioning and depth of interaction (DOI) decoding. Although individual channel readout provided better spatial resolution, row-column summing is proposed to reduce the number of readout channels. The SiPM parameters investigated include photon detection efficiency (PDE) and gain variability between different channels; PDE and gain instability; and dark count noise. Of the variables investigated, the PDE shift of -3.2±0.7% and gain shift of -4±0.9% between detector testing and detector calibration had the most obvious impact on the detector performance, since it not only degraded the spatial resolution but also led to bias in positioning, especially at the edges of the crystal. The dark count noise also had an impact on the intrinsic spatial resolution. No data normalization is required for PDE variability of up to 12% FWHM and gain variability of up to 15% FWHM between SiPM channels. Based upon these results, a row-column summing readout scheme without data normalization will be used. Further, we plan to cool our detectors below room temperature to reduce dark count noise and to actively control the temperature of the SiPMs to reduce drifts in PDE and gain. PMID:22685348

  13. High-Operating-Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

    Science.gov (United States)

    Ting, David Z.; Hill, Cory, J.; Soibel, Alexander; Bandara, Sumith V.; Gunapala, Sarath D.

    2011-01-01

    A mid-wavelength infrared (MWIR) barrier photodetector is capable of operating at higher temperature than the prevailing MWIR detectors based on InSb. The standard high-operating-temperature barrier infrared detector (HOT-BIRD) is made with an InAsSb infrared absorber that is lattice-matched to a GaSb substrate, and has a cutoff wavelength of approximately 4 microns. To increase the versatility and utility of the HOT-BIRD, it is implemented with IR absorber materials with customizable cutoff wavelengths. The HOT-BIRD can be built with the quaternary alloy GaInAsSb as the absorber, GaAlSbAs as the barrier, on a lattice-matching GaSb substrate. The cutoff wavelength of the GaInAsSb can be tailored by adjusting the alloy composition. To build a HOT-BIRD requires a matching pair of absorber and barrier materials with the following properties: (1) their valence band edges must be approximately the same to allow unimpeded hole flow, while their conduction band edges should have a large difference to form an electron barrier; and (2) the absorber and the barrier must be respectively lattice-matched and closely lattice-matched to the substrate to ensure high material quality and low defect density. To make a HOT-BIRD with cutoff wavelength shorter than 4 microns, a GaInAsSb quaternary alloy was used as the absorber, and a matching GaAlSbAs quaternary alloy as the barrier. By changing the alloy composition, the band gap of the quaternary alloy absorber can be continuously adjusted with cutoff wavelength ranging from 4 microns down to the short wavelength infrared (SWIR). By carefully choosing the alloy composition of the barrier, a HOT-BIRD structure can be formed. With this method, a HOT-BIRD can be made with continuously tailorable cutoff wavelengths from 4 microns down to the SWIR. The HOT-BIRD detector technology is suitable for making very-large-format MWIR/SWIR focal plane arrays that can be operated by passive cooling from low Earth orbit. High-operating temperature

  14. Performance of a 4H-SiC Schottky diode as a compact sized detector for neutron pulse form measurements

    International Nuclear Information System (INIS)

    4H-silicon carbide (4H-SiC) detectors are desirable for neutron pulse form measurement for their compact size, excellent radiation resistance and hydrogen free composition. The aim of this study is to investigate the use of a 4H-SiC detector to measure the pulse form of a neutron burst. A 4H-SiC detector is fabricated and tested in the pulsed neutron field of the Chinese Fast Burst Reactor II (CFBR II). Important parameters such as the breeding period and the FWHM of the neutron pulse are derived from the experimental result of the 4H-SiC detector. These parameters agree well with those from a plastic scintillator detector. The divergences are only 0.5%, demonstrating that the 4H-SiC detector can yield a high fidelity time profile of the CFBR II pulse. The difference in peak centroid of alpha spectra is negligible for the 4H-SiC detector even after 18 reactor pulses (a neutron fluence of 8.41×1012 cm−2), confirming the excellent radiation hardness of the 4H-SiC detector in pulsed neutron field. This study therefore indicates that 4H-SiC detectors can be usable as a compact sized detector to measure neutron pulses. - Highlight: • A 4H-SiC detector has been developed as a monitor for reactor neutron pulses for the first time. • The 4H-SiC detector can yield a high fidelity time profile of the Chinese Fast Burst Reactor II (CFBR II) pulse. • The difference in peak centroid of alpha spectra is negligible for the 4H-SiC detector even after 18 reactor pulses (8.41×1012 n/cm2)

  15. Project and construction of a spectrometer for alpha particles using surface barrier detectors

    International Nuclear Information System (INIS)

    The project, construction, tests and some applications of a system for alpha and beta spectrometry, using surface barrier detector are described. The device includes a solid state detector ORTEC-Series F coupled to a system for amplifying the charges produced by passage of an ionizing particle through the detector. The amplifying system is composed by a charge sensitive pre-amplifier, which employs an operational amplifier CA 3140, and a low noise linear amplifier, which is based on the operational amplifiers CA 3140 and LM 301. The pre-amplifier stage input impedance is on the order of TΩ and produces output pulses which heights are proportional to total charge produced by passage of particle through the detector sensitive volume. The main advantage to use charge sensitive system lies in obtention of independent pulse heights of the distributed capacity of connecting cable between the detector and the pre-amplifier. The total system amplification ca reach a maximum of 50.000 in the linear region. Pulses are analysed in a multichannel system ORTEC, model 6240. The amplifier system is easily constructed and low cost using components available in the national market, and it can be employed with ionization chambers, proportional counters, scitillation counters and semiconductor detectors. The results of spectrometer application for alpha spectrometry of AM241 source were compared to systems made with imported stages. (Author)

  16. The ArduSiPM a compact trasportable Software/Hardware Data Acquisition system for SiPM detector

    CERN Document Server

    Bocci, Valerio; Iacoangeli, Francesco; Nuccetelli, Massimo; Recchia, Luigi

    2014-01-01

    The acquisition of a single Silicon Photomultiplier require multiple and expensive electronics modules as : preamplifier, discriminator, bias voltage power supply, temperature monitor, Scalers, Analog to Digital Converter and Time to Digital Converter . The developed ArduSiPM is a compact cost effective and easily replicable Hardware software module for SiPM detector readout. The ArduSiPM uses an Arduino DUE (an open Software/Hardware board based on an ARM Cortex-M3 microcontroller) as processor board and a piggyback custom designed board (Shield), these are controlled by custom developed software and interface. The Shield contains different electronics features both to monitor, to set and to acquire the SiPM signals using the microcontroller board. The shield embed a controlled bias voltage power supply, a fast voltage preamplifier, a programmable fast discriminator to generate over threshold digital pulse , a peak hold to measure the pulse height, a temperature monitor system, a scaler to monitor over thres...

  17. New development of highly sensitive sintered LiF;Mg,Cu,Na,Si TL detector

    International Nuclear Information System (INIS)

    A highly sensitive pellet-type LiF:Mg,Cu,Na,Si TL detector has been newly developed. The TL sensitivity of this new TL detector was about 30 times higher than that of the TLD-100 by light integration measurements. The optimum concentrations of dopants for a pellet-type LiF:Mg,Cu,Na,Si TL detector were investigated as Mg: 0.2 mol%, Cu: 0.05 mol%, Na: 0.9 mol% and Si: 0.9 mol%. The observed glow curve structure of the detector was suitable for practical TLD on the grounds of its significantly low level of ratio namely, height of the high temperature peak / height of the main dosimetric peak (P5/P4). Reusability study of the detector was carried out for 10 cycles of reuse. The results show that the coefficients of variation for each detector separately did not exceed 0.016, and for all 10 detectors collectively was 0.0054

  18. Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers

    Science.gov (United States)

    Gelczuk, Ł.; Dąbrowska-Szata, M.; Sochacki, M.; Szmidt, J.

    2014-04-01

    Conventional deep level transient spectroscopy (DLTS) technique was used to study deep electron traps in 4H-SiC Junction Barrier Schottky (JBS) rectifiers. 4H-SiC epitaxial layers, doped with nitrogen and grown on standard n+-4H-SiC substrates were exposed to low-dose aluminum ion implantation process under the Schottky contact in order to form both JBS grid and junction termination extension (JTE), and assure good rectifying properties of the diodes. Several deep electron traps were revealed and attributed to impurities or intrinsic defects in 4H-SiC epitaxial layers, on the basis of comparison of their electrical parameters (i.e. activation energies, apparent capture cross sections and concentrations) with previously published results.

  19. Development of High Resolution Si Strip Detectors for Experiments at High Luminosity at the LHC

    CERN Multimedia

    2002-01-01

    % RD-20 \\\\ \\\\ Recent studies indicate that good tracking near the interaction region in LHC experiments will be crucial to fully exploit the physics potential of this machine up to the highest luminosities. It is believed that Si strip detectors are among the best candidates to survive in the experimental environment imposed by the high energy, high luminosity and the severe radiation levels expected. It is therefore proposed to perform a systematic study of the feasibility of using Si strip detectors and suitably designed front-end electronics for tracking in LHC experiments. Issues discussed here are possible physics applications, requirements and design characteristics for Si strip detectors and front-end electronics and cooling. An R\\&D programme for the coming two years is described.

  20. Phase Transition Sensitive Schottky Barriers In Ga-Si(P Contacts

    Directory of Open Access Journals (Sweden)

    B.P. Modi

    2013-05-01

    Full Text Available Investigation and understanding of Schottky diodes continue to be interesting both for basic as well as technological points of view. Even now the evolutionary aspects of such contacts are not very clearly understood. In this paper it is shown that in respect of interfacial strain contribution to the barrier heights of such contacts semiconductor – liquid metal contacts are relatively better placed than solid semiconductor-solid metal contacts. Results on Ga-Si(p contact are discussed in this paper to show phase sensitive contribution to the barrier height of such Schottky contacts.

  1. Mechanical properties of SiOx gas barrier coatings on polyester films

    OpenAIRE

    Howells, D. G.; Henry, B. M.; Leterrier, Y.; Månson, J.-A. E.; Madocks, J.; Assender, H. E.

    2008-01-01

    This paper reports the impressive mechanical properties of 1 μm thick carbon-containing SiOx gas barrier coatings, characterised using the uniaxial fragmentation test. Such coatings have been found to act as excellent barriers to water vapour permeation partly because they can be made so thick without stress induced cracking. The impressive mechanical properties are thought to be due in part to the high amount of carbon they contain, which gives them a more organic character, as well as the f...

  2. Electroless copper deposition as a seed layer on TiSiN barrier

    International Nuclear Information System (INIS)

    Electroless deposition of copper as a seeding technology has received considerable attention in back-end-of-line device fabrication. This work explores the effects of plasma processing parameters such as argon gas flow rate and nitrogen plasma treatment time on the properties of electrolessly plated Cu on TiSiN barrier layers. The barrier film was produced by a low-frequency inductively coupled plasma process. The properties of deposited electroless copper are characterized by x-ray diffraction, four-point resistivity probe, atomic force microscopy, and field emission scanning electron microscope. The required palladium activation time is greatly reduced on TiSiN compared to TiN. In both cases there exists a preferred (111) crystal orientation in Cu film and the intensity ratio of I(111)/I(200) is very close. The Cu grain size is within the range of 23-34 nm for 84 nm thick film. It is found that argon gas flow rate does not have a significant effect on the resistivity of electroless copper film on TiSiN. However, increasing nitrogen plasma treatment time reduces the resistivity of copper film. The roughness of plated Cu layer largely follows the one of the underlying TiSiN. Good surface coverage of electroless Cu seed layer on TiSiN has been achieved in our experiment

  3. Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces

    Science.gov (United States)

    Shimizu, Hirofumi; Sanada, Yuji

    2011-08-01

    We have studied the behavior of Au clusters on the top surface of a SiO2 film and/or at the SiO2/Si interface as a function of oxidation temperature between room temperature (RT) and 500 °C in conjunction with a Schottky-barrier-induced AC surface photovoltage (SPV) and an enhanced SiO2 growth due to Au at 500 °C. Upon rinsing an n-type Si(001) wafer in a Au-contaminated aqueous solution, precipitated Au atoms are observed as clusterlike Au granules on the top surface of SiO2 (Au surface concentration, 2.3 ×1015 atoms/cm2). In thermally oxidized Au-contaminated n-type Si(001) wafers between 100 and 500 °C, a Au cluster of a similar shape is also observed. Chemical analysis gives evidence that Au existed at the SiO2/Si interface, which produced Au/n-Si Schottky-barrier-type AC SPV between 100 and 500 °C as well as at both RT and higher temperatures, indicating that the Au/n-Si Schottky barrier remains in a similar manner. In the Au-contaminated n-Si thermally oxidized at 500 °C, the catalytic action of Au atoms enhances SiO2 growth as well as the case at high temperatures between 750 and 900 °C. The mechanism of the enhanced growth is proposed.

  4. Development of Au-Si surface-barrier charged-particle telescope

    International Nuclear Information System (INIS)

    The Au-silicon surface-barrier charged-particle telescope detect system. The mean fabrication process of The total depleted Au-silicon surface barrier charged particles telescope detect system is briefly described in the paper, The system is comprised of ΔE-E, the ΔE detector having sensitive layer of 350 tan and active area of 453 mm2; the E detector having sensitive layer of 700 μm and active area of 1385 mm2. energy resolution of FHWM=0.8% for the ΔE and FHWM=1.2% for E, for energy loss of The-c' 8.78 MeV α-particles have been obtained. The telescope detect system con is used for the measurement of exotic nucleus β-delayed proton. (authors)

  5. Polymer-Derived Ceramics as Innovative Oxidation Barrier Coatings for Mo-Si-B Alloys

    Science.gov (United States)

    Hasemann, Georg; Baumann, Torben; Dieck, Sebastian; Rannabauer, Stefan; Krüger, Manja

    2015-04-01

    A preceramic polymer precursor, perhydropolysilazane, is used to investigate its function as a new type of oxidation barrier coating on Mo-Si-B alloys. After dip-coating and pyrolysis at 1073 K (800 °C), dense and well-adhering SiON ceramic coatings could be achieved, which were investigated by SEM and cyclic oxidation tests at 1073 K and 1373 K (800 °C and 1100 °C). The coating is promising in reducing the mass loss during the initial stage of oxidation exposure at 1373 K (1100 °C) significantly.

  6. Barrier distribution from 28Si+154Sm quasielastic scattering: Coupling effects in the fusion process

    Directory of Open Access Journals (Sweden)

    Kaur Gurpreet

    2016-01-01

    Full Text Available Barrier distribution for the 28Si+154Sm system has been extracted from large angle quasielastic scattering measurement to investigate the role of various channel couplings on fusion dynamics. The coupled channel calculations, including the collective excitation of the target and projectile, are observed to reproduce the experimental BD rather well. It seems that the role of neutron transfer, relative to collective excitation, is in fact weak in the 28Si+154Sm system even though it has positive Q-value for neutron transfer channels.

  7. On the use of thin ion implanted Si detectors in heavy ion experiments

    International Nuclear Information System (INIS)

    We present test results on the use of thin ion implanted epitaxial Si detectors for registration of low- and medium energy heavy fragments in nuclear reactions. A linear energy response for very low energy nuclei has been observed. A test of 10 μm + 300 μm telescopes under realistic experimental conditions for heavy ion experiments exhibits the possibilities to use these detectors for the measurements of multifragmentation products. (authors)

  8. Measurement and Simulation of Neutron response at Cf-252 neutron field using SiC Diode Detector

    International Nuclear Information System (INIS)

    Recently, a silicon carbide (SiC) semiconductor detector is drawing attention as a neutron detector in the harsh environment because of its discriminative characteristics. SiC is very resistant to high temperature and intense radiation field, compared with the other semiconductor materials. In this sense, SiC is expected to be a semiconductor material well suited for nuclear power plant applications such as in-core reactor neutron flux monitoring and safeguarding nuclear materials. The SiC diode detector could be expected to replace the SPND. In our previous study, several types of 4H SiC p-i-n diode detector were fabricated and tested. This study is focused on the prediction of neutron response for SiC diode detector before in-core experiment

  9. The Richardson constant and barrier inhomogeneity at Au/Si3N4/n-Si (MIS) Schottky diodes

    International Nuclear Information System (INIS)

    Si3N4 films were deposited on n-type silicon substrate by the radio frequency magnetron sputtering technique. The current–voltage (I–V) characteristics of Au/Si3N4/n-Si (metal–insulator–semiconductor) Schottky diodes were investigated in the temperature range of 160–400 K. Experimental results show an abnormal increase in the zero-bias barrier height (BH) (ΦBo) and a decrease in the ideality factor (n) with increasing temperature. This behavior is attributed to barrier inhomogeneities by assuming a Gaussian distribution (GD) of BHs. The conventional Richardson plot (ln(Io/T2) versus 1000/T) exhibits a linearity above about 300 K. The values of activation energy (Ea) and Richardson constant (A*) were found to be 0.350 eV and 1.242 × 10–3 A cm−2 K−2 from the slope and the intercept at the ordinate of the linear region of this plot, respectively. Also, we attempted to draw a ΦBo versus q/2kT plot to determine evidence of the GD of BHs, and the values of Φ-barBo = 0.999 eV and σs = 0.137 eV for the mean BH and zero-bias standard deviation, respectively, were obtained from this plot; then, a modified ln(Io/T2) − q2σs2/2k2T2 versus q/kT plot gives Φ-barBo and A* as 0.992 eV and 108.228 A cm−2 K−2, respectively. This value of A* is very close to the theoretical value of 112 A cm−2 K−2 for n-type Si. (paper)

  10. Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier

    International Nuclear Information System (INIS)

    For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope (110mAg) through the SiC coating layer is a safety concern. To understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. The results suggest little migration of buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer

  11. Design and development of a fNIRS system prototype based on SiPM detectors

    Science.gov (United States)

    Sanfilippo, D.; Valvo, G.; Mazzillo, M.; Piana, A.; Carbone, B.; Renna, L.; Fallica, P. G.; Agrò, D.; Morsellino, G.; Pinto, M.; Canicattı, R.; Galioto, N.; Tomasino, A.; Adamo, G.; Stivala, S.; Parisi, A.; Curcio, L.; Giaconia, C.; Busacca, A. C.; Pagano, R.; Libertino, S.; Lombardo, S.

    2014-03-01

    Functional Near Infrared Spectroscopy (fNIRS) uses near infrared sources and detectors to measure changes in absorption due to neurovascular dynamics in response to brain activation. The use of Silicon Photomultipliers (SiPMs) in a fNIRS system has been estimated potentially able to increase the spatial resolution. Dedicated SiPM sensors have been designed and fabricated by using an optimized process. Electrical and optical characterizations are presented. The design and implementation of a portable fNIRS embedded system, hosting up to 64 IR-LED sources and 128 SiPM sensors, has been carried out. The system has been based on a scalable architecture whose elementary leaf is a flexible board with 16 SiPMs and 4 couples of LEDs each operating at two wavelengths. An ARM based microcontroller has been joined with a multiplexing interface, able to control power supply for the LEDs and collect data from the SiPMs in a time-sharing fashion and with configurable temporal slots. The system will be validated by using a phantom made by materials of different scattering and absorption indices layered to mimic a human head. A preliminary characterization of the optical properties of the single material composing the phantom has been performed using the SiPM in the diffuse radial reflectance measurement technique. The first obtained results confirm the high sensitivity of such kind of detector in the detection of weak light signal even at large distance between the light source and the detector.

  12. Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

    International Nuclear Information System (INIS)

    This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  13. As-Al recoil implantation through Si 3N 4 barrier layer

    Science.gov (United States)

    Godignon, P.; Morvan, E.; Montserrat, J.; Jordà, X.; Flores, D.; Rebollo, J.

    1999-01-01

    Al recoil implantation have been shown to be a possible alternative to direct Al ion implantation to avoid usual problems linked with Al sources. Poor efficiency of the recoil + annealing process is observed if no barrier or an oxyde screen layers are used. This problem can be solved using a Si 3N 4 screen layer. Then, P-N and N +/P/N structures can be obtained with deep low doped P-well with reduced thermal budget.

  14. As-Al recoil implantation through Si3N4 barrier layer

    International Nuclear Information System (INIS)

    Al recoil implantation have been shown to be a possible alternative to direct Al ion implantation to avoid usual problems linked with Al sources. Poor efficiency of the recoil + annealing process is observed if no barrier or an oxyde screen layers are used. This problem can be solved using a Si3N4 screen layer. Then, P-N and N+/P/N structures can be obtained with deep low doped P-well with reduced thermal budget

  15. Barrier controlled carrier trapping of extended defects in CdZnTe detector

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Rongrong [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Jie, Wanqi, E-mail: jwq@nwpu.edu.cn [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Xu, Yadong [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Yu, Hui; Zha, Gangqiang; Wang, Tao; Ren, Jie [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China)

    2015-09-11

    Transient current techniques using alpha particle source were utilized to study the influence of extended defects on the electron drift time and the detector performance of CdZnTe crystals. Different from the case of trapping through isolated point defect, a barrier controlled trapping model was used to explain the mechanism of carrier trapping at the extended defects. The effect of extended defects on the photoconductance was studied by laser beam induced transient current (LBIC) measurement. The results demonstrate that the Schottky-type depletion space charge region is induced at the vicinity of the extended defects, which further distorts the internal electric field distribution and affects the carrier trajectory in CdZnTe crystals. The relationship between the electron drift time and detector performance has been established. - Highlights: • The barrier controlled trapping model was developed around extended defects. • Electron mobility and E-field distribution were distorted by space charge depletion region. • Extended defects act as a recombination-activated region. • The relationships between extended defects and detector performance were established.

  16. Detector block based on arrays of 144 SiPMs and monolithic scintillators: A performance study

    International Nuclear Information System (INIS)

    We have developed a detector block composed by a monolithic LYSO scintillator coupled to a custom made 12×12 SiPMs array. The design is mainly focused to applications such as Positron Emission Tomography. The readout electronics is based on 3 identical and scalable Application Specific Integrated Circuits (ASIC). We have determined the main performance of the detector block namely spatial, energy, and time resolution but also the system capability to determine the photon depth of interaction, for different crystal surface treatments. Intrinsic detector spatial resolution values as good as 1.7 mm FWHM and energies of 15% for black painted crystals were measured

  17. Schottky Barrier mapping of the W/Si diode using ballistic electron emission microscopy

    Science.gov (United States)

    Durcan, Christopher; Balsano, Robert; Pieniazek, Nicholas; Labella, Vincent

    2015-03-01

    The Schottky barrier of the W/Si(001) diode was investigated and spatially mapped at the nanoscale using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM). The miscibility of tungsten and silicon creates a thin silicide upon deposition with transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) showing the changes in the silicide over several weeks. Using standard current voltage measurements there is no change in the charge transport across the diode during this time period. However, BEEM measurements do show dramatic changes to the transport of ballistic electrons over time with nanoscale resolution. Time dependent Schottky barrier maps are generated over a 1 μm x 1 μm area and provide valuable insight to the barrier height homogeneity, defect formation, and interfacial effects occurring in the diode.

  18. Effects of Grain Boundary Barrier in ZnO/Si Heterostructure

    Institute of Scientific and Technical Information of China (English)

    LIU Bing-Ce; LIU Ci-Hui; FV Zhu-Xi; Yi Bo

    2009-01-01

    The influence of ZnO microstructure on electrical barriers is investigated using capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) measurements. A deep level center located at EC- 0.24 eV obtained by DLTS in the ZnO films is an intrinsic defect related to Zni. The surface states in the ZnO grains that have acceptor behavior of capturing electrons from Zni defects result in the formation of grain barriers. In addition, we find that the current transport is dominated by grain barriers after annealing at 600°C at O2 ambient. With the increment of the annealing temperature, the current transport mechanism of ZnO/Si heterostructure is mainly dominated by thermo-emission.

  19. Reduction of Defects in SiOx Vapor Permeation Barriers on Polymer Substrates by Introducing a Sputtered Interlayer

    Science.gov (United States)

    Yun, Jungheum; Lee, Sunghun; Jeong, Yujeong; Lee, Hong-Rim; Kwon, Jung-Dae; Lee, Gun-Hwan

    2009-05-01

    This paper investigated the water-vapor permeability of silicon oxide (SiOx) barriers grown on poly(ethylene terephthalate) (PET) substrates using plasma-enhanced chemical vapor deposition (PECVD). The water-vapor transmission rate (WVTR) of granular-type SiOx barriers is dependent upon the density of microscopic pinholes in the barriers. A two-step hybrid process, consisting of (i) a sputtering stage for 10-nm-thick Al2O3 interlayer growth and (ii) a subsequent PECVD stage for thicker SiOx film growth, was proposed in this study. Granules and pinholes in SiOx barriers were simultaneously eliminated by introducing an Al2O3 interlayer on the PET surface prior to the SiOx PECVD process. Plasma-induced reconstruction of PET surfaces was prevented by applying a reactive sputtering process to grow the Al2O3 interlayer. High-quality barriers were developed from SiOx growth on the sputtered interlayer. Low WVTR values in the range of 10-3 g m-2 d-1 were recorded in tests using a MOCON instrument. The WVTR was two orders of magnitude smaller than that of conventional SiOx barriers directly grown on PET substrates without the Al2O3 interlayer.

  20. SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

    Science.gov (United States)

    Yan, Feng

    2006-01-01

    A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

  1. Formation of PtSi Schottky barrier MOSFETs using plasma etching

    International Nuclear Information System (INIS)

    PtSi Schottky barrier (SB) MOSFETs were fabricated and their device performance was characterized. PtSi was selected instead of NiSi to form the p-type SB junction since such a configuration would be easy to fabricate through SF6 based plasma etching. The addition of He-O2 in SF6 decreases the etching rate of PtSi while the etching rate of Pt remains unchanged. The retardation in the etching rate of PtSi in He-O2/SF6 is attributed to the formation of a metal oxide on the etched PtSi surface, as evidenced by the x-ray photoelectron spectroscopy results. Optical emission spectroscopy was conducted to establish the endpoint where the wavelength from the feed gas was traced instead of tracing the etching by-products since the by-products have little association with the plasma reaction. The IDS–VDS curves at various VG–VTH indicate that plasma etching resulted in the successful removal of the Pt on the sidewall region, with negligible damage to the S/D area

  2. Formation of PtSi Schottky barrier MOSFETs using plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Young Min; Hwang, Wan Sik, E-mail: whwang@kau.ac.kr [Department of Materials Engineering, Korea Aerospace University, Gyeonggi-do 412-791 (Korea, Republic of); Yoo, Won Jong, E-mail: yoowj@skku.edu [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 440-746 (Korea, Republic of)

    2015-03-15

    PtSi Schottky barrier (SB) MOSFETs were fabricated and their device performance was characterized. PtSi was selected instead of NiSi to form the p-type SB junction since such a configuration would be easy to fabricate through SF{sub 6} based plasma etching. The addition of He-O{sub 2} in SF{sub 6} decreases the etching rate of PtSi while the etching rate of Pt remains unchanged. The retardation in the etching rate of PtSi in He-O{sub 2}/SF{sub 6} is attributed to the formation of a metal oxide on the etched PtSi surface, as evidenced by the x-ray photoelectron spectroscopy results. Optical emission spectroscopy was conducted to establish the endpoint where the wavelength from the feed gas was traced instead of tracing the etching by-products since the by-products have little association with the plasma reaction. The I{sub DS}–V{sub DS} curves at various V{sub G}–V{sub TH} indicate that plasma etching resulted in the successful removal of the Pt on the sidewall region, with negligible damage to the S/D area.

  3. Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

    International Nuclear Information System (INIS)

    We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and high electron mobility well excess of 6000 cm2 V−1 s−1

  4. Characteristics of scintillation detectors based on inorganic scintillators and SiPM light readout

    Science.gov (United States)

    Szcze&şacute; niak, T.; Grodzicka, M.; Moszyński, M.; Szawłowski, M.; Wolski, D.; Baszak, J.

    2013-02-01

    Recently, a silicon photomultiplier (SiPM) became one of the strongest candidates for application in PET-MR or SPECT-MR dual-modality scanners. However, optimization of the scintillation detectors with SiPM light readout requires different approach than in the case of classic photomultipliers. The finite number of micro-cells in a SiPM creates nonlinear response for high number of incident photons. Moreover, the size and total number of micro-cells defines fill factor, which in turn affects the photon detection efficiency (PDE). Response of SiPMs is also highly sensitive to bias voltage causing changes in PDE and excess noise factor (ENF). Finally, each cell posses an effective dead time needed to fully recharge that cell after the photon detection. In this work the listed above unique features of SiPMs are overviewed. The reported data also contain measurements of energy resolution and 22Na time resolution.

  5. Characteristics of scintillation detectors based on inorganic scintillators and SiPM light readout

    Energy Technology Data Exchange (ETDEWEB)

    Szcześniak, T., E-mail: t.szczesniak@ncbj.gov.pl [National Centre for Nuclear Research, A. Sołtana 7, PL 05-400 Otwock-Świerk (Poland); Grodzicka, M.; Moszyński, M.; Szawłowski, M.; Wolski, D. [National Centre for Nuclear Research, A. Sołtana 7, PL 05-400 Otwock-Świerk (Poland); Baszak, J. [Hamamatsu Photonics Deutschland GmbH, Arzbergerstr. 10, D-82211 Herrsching am Ammersee (Germany)

    2013-02-21

    Recently, a silicon photomultiplier (SiPM) became one of the strongest candidates for application in PET–MR or SPECT–MR dual-modality scanners. However, optimization of the scintillation detectors with SiPM light readout requires different approach than in the case of classic photomultipliers. The finite number of micro-cells in a SiPM creates nonlinear response for high number of incident photons. Moreover, the size and total number of micro-cells defines fill factor, which in turn affects the photon detection efficiency (PDE). Response of SiPMs is also highly sensitive to bias voltage causing changes in PDE and excess noise factor (ENF). Finally, each cell posses an effective dead time needed to fully recharge that cell after the photon detection. In this work the listed above unique features of SiPMs are overviewed. The reported data also contain measurements of energy resolution and {sup 22}Na time resolution.

  6. Development of Si-based detectors for intermediate energy heavy-ion physics at a storage-ring accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Whitlow, H.J.; Jaworowski, J.; Leandersson, M.; El Bouanani, M. [Lund Institute of Technology, Solvegatan Lund, (Sweden). Department of Nuclear Physics; Jakobsson, B. [Lund Univ. (Sweden). Dept. of Cosmic and Subatomic Physics; Romanski, J.; Westerberg, L.; Van Veldhuizen, E.J. [Uppsala Univ. (Sweden); The Chicsi Collaboration

    1996-12-31

    Ultrahigh vacuum (UHV) compatible Si detectors are being developed by the CELSIUS Heavy lon Collaboration (CHIC) for measuring the energy and identity of Intermediate Mass Fragments (IMF) with Z {approx} 3 - 12 and energies of 0.7 - I 0 A MeV. Here we give an overview of the development of Si {delta}E-E detector telescopes and investigations on IMF identification based on the pulse shape from Si-detectors where the particles impinge on the rear-face of the detector. 9 refs., 4 figs.

  7. High-voltage breakdown studies on Si microstrip detectors

    CERN Document Server

    Albergo, S; Azzi, P; Babucci, E; Bacchetta, N; Bader, A J; Bagliesi, G; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Buffini, A; Busoni, S; Calefato, G; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Civinini, C; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Marina, R D; Dutta, S; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Fürtjes, A; Giassi, A; Giorgi, M A; Giraldo, A; Glessing, B; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Hrubec, Josef; Muhtinen, M; Kaminski, A; Karimäki, V; Saint-Koenig, M; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Papi, A; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Radicci, V; Raffaelli, F; Raymond, M; Santocchia, A; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Skog, K; Starodumov, Andrei; Stavitski, I; Stefanini, G; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Zie, Z; Li Ya Hong; Watts, S; Wittmer, B

    1999-01-01

    The breakdown performance of CMS barrel module prototype detectors and test devices with single and multi-guard structures were studied before and after neutron irradiation up to 2-10/sup 14/ 1 MeV equivalent neutrons. Before irradiation avalanche breakdown occurred at the guard ring implant edges. We measured 100-300 V higher breakdown voltage values for the devices with multi-guard than for devices with single-guard ring, After irradiation and type inversion the breakdown was smoother than before irradiation and the breakdown voltage value increased to 500-600 V for most of the devices. (9 refs).

  8. First Compton telescope prototype based on continuous LaBr{sub 3}-SiPM detectors

    Energy Technology Data Exchange (ETDEWEB)

    Llosá, G., E-mail: gabriela.llosa@ific.uv.es [Instituto de Física Corpuscular (IFIC-CSIC/UVEG), Valencia (Spain); Cabello, J. [Instituto de Física Corpuscular (IFIC-CSIC/UVEG), Valencia (Spain); Callier, S. [Laboratoire de L' Accélérateur Linéaire, Orsay (France); Gillam, J.E.; Lacasta, C. [Instituto de Física Corpuscular (IFIC-CSIC/UVEG), Valencia (Spain); Rafecas, M. [Instituto de Física Corpuscular (IFIC-CSIC/UVEG), Valencia (Spain); Departamento de Física Atómica, Molecular y Nuclear, Universitat de Valencia, Valencia (Spain); Raux, L. [Laboratoire de L' Accélérateur Linéaire, Orsay (France); Solaz, C.; Stankova, V.; La Taille, C. de; Trovato, M.; Barrio, J. [Instituto de Física Corpuscular (IFIC-CSIC/UVEG), Valencia (Spain)

    2013-08-01

    A first prototype of a Compton camera based on continuous scintillator crystals coupled to silicon photomultiplier (SiPM) arrays has been successfully developed and operated. The prototype is made of two detector planes. The first detector is made of a continuous 16×18×5 mm{sup 3} LaBr{sub 3} crystal coupled to a 16-elements SiPM array. The elements have a size of 3×3 mm {sup 3} in a 4.5×4.05 mm{sup 2} pitch. The second detector, selected by availability, consists of a continuous 16×18×5 mm{sup 3} LYSO crystal coupled to a similar SiPM array. The SPIROC1 ASIC is employed in the readout electronics. Data have been taken with a {sup 22}Na source placed at different positions and images have been reconstructed with the simulated one-pass list-mode (SOPL) algorithm. Detector development for the construction of a second prototype with three detector planes is underway. LaBr{sub 3} crystals of 32×36 mm{sup 2} size and 5/10 mm thickness have been acquired and tested with a PMT. The resolution obtained is 3.5% FWHM at 511 keV. Each crystal will be coupled to four MPPC arrays. Different options are being tested for the prototype readout.

  9. A conductive surface coating for Si-CNT radiation detectors

    International Nuclear Information System (INIS)

    Silicon–Carbon Nanotube radiation detectors need an electrically conductive coating layer to avoid the nanotube detachment from the silicon substrate and uniformly transmit the electric field to the entire nanotube active surface. Coating material must be transparent to the radiation of interest, and must provide the drain voltage necessary to collect charges generated by incident photons. For this purpose various materials have been tested and proposed in photodetector and photoconverter applications. In this article interface properties and electrical contact behavior of Indium Tin Oxide films on Carbon Nanotubes have been analyzed. Ion Beam Sputtering has been used to grow the transparent conductive layer on the nanotubes. The films were deposited at room temperature with Oxygen/Argon mixture into the sputtering beam, at fixed current and for different beam energies. Optical and electrical analyses have been performed on films. Surface chemical analysis and in depth profiling results obtained by X-ray Photoelectron Spectroscopy of the Indium Tin Oxide layer on nanotubes have been used to obtain the interface composition. Results have been applied in photodetectors realization based on multi wall Carbon Nanotubes on silicon. - Highlights: • ITO was deposited by Ion Beam Sputtering on MWCNT. • ITO on CNT makes an inter-diffusion layer of the order of one hundred nanometers. • Improvements of quantum efficiency of photon detectors based on CNT with ITO

  10. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

  11. Characteristics of fabricated SiC radiation detectors for fast neutron detection

    International Nuclear Information System (INIS)

    Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of its capability to withstand strong radiation fields and high temperatures. Two PIN-type SiC semiconductor neutron detectors, which can be used for nuclear power plant (NPP) applications, such as in-core reactor neutron flux monitoring and measurement, were designed and fabricated. As a preliminary test, MCNPX simulations were performed to estimate reaction probabilities with respect to neutron energies. In the experiment, I-V curves were measured to confirm the diode characteristic of the detectors, and pulse height spectra were measured for neutron responses by using a 252Cf neutron source at KRISS (Korea Research Institute of Standards and Science), and a Tandem accelerator at KIGAM (Korea Institute of Geoscience and Mineral Resources). The neutron counts of the detector were linearly increased as the incident neutron flux got larger.

  12. Energy measurement and fragment identification using digital signals from partially depleted Si detectors

    CERN Document Server

    Pasquali, G; Neindre, N Le; Ademard, G; Barlini, S; Bini, M; Bonnet, E; Borderie, B; Bougault, R; Bruno, M; Casini, G; Chbihi, A; Cinausero, M; Duenas, J A; Edelbruck, P; Frankland, J D; Gramegna, F; Gruyer, D; Kordyasz, A; Kozik, T; Lopez, O; Marchi, T; Morelli, L; Olmi, A; Ordine, A; Parlog, M; Piantelli, S; Poggi, G; Rivet, M F; Rosato, E; Salomon, F; Spadaccini, G; Stefanini, A A; Valdre, S; Vient, E; Twarog, T; Alba, R; Maiolino, C; Santonocito, D

    2014-01-01

    A study of identification properties of a Si-Si DE-E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias voltages have been used, one corresponding to full depletion, the others associated with a depleted layer ranging from 90% to 60% of the detector thickness. Fragment identification has been performed using either the DE-E technique or Pulse Shape Analysis (PSA). Both detectors are reverse mounted: particles enter from the low field side, to enhance the PSA performance. The achieved charge and mass resolution has been quantitatively expressed using a Figure of Merit (FoM). Charge collection efficiency has been evaluated and the possibility of energy calibration corrections has been considered. We find that the DE-E performance is not affected by incomplete depletion even when only 60% of the wafer is depleted. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds are higher tha...

  13. Si pixel detectors in the detection of EC/EC decay

    International Nuclear Information System (INIS)

    The SPT collaboration has been investigating the applicability of pixel detectors in the detection of two neutrino double electron capture (2νEC/EC) in106Cd. The collaboration has proposed a Silicon Pixel Telescope (SPT) where a pair of Si pixel detectors with enriched Cd foil in the middle forms the detection unit. The Pixel detector gives spatial information along with energy of the particle, thus helps to identify and remove the background signals. Four units of SPT prototype (using 0.5 and 1 mm Si sensors) were fabricated and installed in the LSM underground laboratory, France. Recent progress in the SPT experiment and preliminary results from background measurements are presented

  14. Modeling split gate tunnel barriers in lateral double top gated Si-MOS nanostructures

    Science.gov (United States)

    Shirkhorshidian, Amir; Bishop, Nathaniel; Young, Ralph; Wendt, Joel; Lilly, Michael; Carroll, Malcolm

    2012-02-01

    Reliable interpretation of quantum dot and donor transport experiments depends critically on understanding the tunnel barriers separating the localized electron state from the 2DEG regions which serve as source and drain. We analyze transport measurements through split gate point contacts, defined in a double gate enhancement mode Si-MOS device structure. We use a square barrier WKB model which accounts for barrier height dependence on applied voltage. This constant interaction model is found to produce a self-consistent characterization of barrier height and width over a wide range of applied source-drain and gate bias. The model produces similar results for many different split gate structures. We discuss this models potential for mapping between experiment and barrier simulations. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  15. Comparison of bulk and epitaxial 4H-SiC detectors for radiation hard particle tracking

    CERN Document Server

    Quinn, T; Bruzzi, M; Cunningham, W; Mathieson, K; Moll, M; Nelson, T; Nilsson, H E; Pintillie, I; Rahman, M; Reynolds, L; Sciortino, S; Sellin, P J; Strachan, H; Svensson, B G; Vaitkus, J

    2003-01-01

    Measurements and simulations have been carried out using bulk and epitaxial SiC detectors. Samples were irradiated to fluences of around 10**1**4 hardrons/cm**2. Material of thickness 40um gave a charge collection efficiency of 100% dropping to around 60% at 100mum thickness. Detailed MEDICI simulations incorporated the main defect levels in SiC, the vanadium center, Z-center and a mid-gap level as measured by deep level transient spectroscopy and other techniques. Calculated recombination currents and charge collection efficiencies at varying fluences were comparable to experimental data. The study suggests that SiC detectors will operate up to fluences around 10 **1**6/cm**2 as required by future particle physics experiments.

  16. Dosimetric properties of sintered LiF : Mg,Cu,Na,Si TL detectors

    International Nuclear Information System (INIS)

    Selected dosimetric properties of sintered LiF : Mg,Cu,Na,Si detectors were studied. Solid LiF : Mg,Cu,Na,Si pellets of diameters 4.5 mm and thickness 0.9 mm, dark blue in colour, were obtained by cold pressing and sintering the powder at 820 deg. C. The dosimetric properties of the newly developed detectors were studied and compared with the properties of LiF : Mg,Cu,P pellets (MCP-N). The annealing conditions were the same as those used for MCP-N detectors. X-ray exposures were performed at the KAERI,Taejon,Korea, while other irradiation and readout were carried out at the INP in Krakow, Poland. The glow-curve structure of LiF : Mg,Cu,Na,Si pellets is found to be comparable to that of MCP-N (LiF : Mg,Cu,P) detectors but the absolute sensitivity is about 50% lower. The photon energy response after doses of X-rays of energy about 100 keV shows a decrease, similar to that in LiF : Mg,Cu,P. For lower energies the response is higher than that for LiF : Mg,Cu,P due to the presence of high-Z elements (Na,Cu, and Si). The relative TL efficiency after doses of alpha particles from an 214 Am source of the sintered LiF : Mg,Cu,Na,Si detectors is similar to that of MCP-N (LiF : Mg,Cu,P)

  17. Cold performance tests of blocked-impurity-band Si:As detectors developed for DARWIN

    CERN Document Server

    Birkmann, Stephan M; Groezinger, Ulrich; Krause, Oliver; Souverijns, Tim; Putzeys, Jan; Tezcan, Deniz Sabuncuoglu; De Munck, Koen; Fiorini, Paolo; Minoglou, Kiki; Merken, Patrick; Van Hoof, Chris; De Moor, Piet

    2008-01-01

    We report first results of laboratory tests of Si:As blocked-impurity-band (BIB) mid-infrared (4 to 28 um) detectors developed by IMEC. These prototypes feature 88 pixels hybridized on an integrated cryogenic readout electronics (CRE). They were developed as part of a technology demonstration program for the future DARWIN mission. In order to be able to separate detector and readout effects, a custom build TIA circuitry was used to characterize additional single pixel detectors. We used a newly designed test setup at the MPIA to determine the relative spectral response, the quantum efficiency, and the dark current. All these properties were measured as a function of operating temperature and detector bias. In addition the effects of ionizing radiation on the detector were studied. For determining the relative spectral response we used a dual-grating monochromator and a bolometer with known response that was operated in parallel to the Si:As detectors. The quantum efficiency was measured by using a custom-buil...

  18. Large area, low capacitance Si(Li) detectors for high rate x-ray applications

    International Nuclear Information System (INIS)

    Large area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier pulse-processing times. A typical device employing the new geometry with a thickness of 6 mm and an active area of 175 mm 2 has a capacitance of only 0.5 pf, compared to 2.9 pf for a conventional planar device with equivalent dimensions. These new low capacitance detectors, used in conjunction with low capacitance field effect transistors, will result in x-ray spectrometers capable of operating at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of x-ray energies at 80 K is comparable to typical state-of-the-art conventional Si(Li) devices. In addition to their low capacitance, the new devices offer other advantages over conventional detectors. Detector fabrication procedures, I-V and C-V characteristics, noise performance, and spectral response to 2-60 keV x-rays are described

  19. Low frequency noise in semiconductor detectors

    International Nuclear Information System (INIS)

    Noise characteristics of surface-barrier detectors based on Au contacts on n-Si were measured and analyzed. The metal layers were deposited by evaporation to 40-100 nm thickness. Standard surface-barrier detectors based on Au/Si structures are known to have favorable characteristics, but they tend to degrade with aging and under severe working conditions. Degradation is particularly related to the increase in noise level, leakage current and the reduction of detector efficiency and resolution. Therefore, practical applications of surface-barrier detectors demand their constant upgrading. Improvements of detector properties are concentrated mainly on the front surface and front (rectifying) contact. The aim was to improve the noise characteristics of the surface-barrier structures and retain the favorable detector properties of the Au/Si system. (authors)

  20. Detection properties of LEC SI GaAs radiation detectors with the symmetrical contact configuration

    International Nuclear Information System (INIS)

    I-V characteristics and detection properties (CCE, FWHM) of the semi-insulating GaAs detectors (base length 200 μm) with the Au-Au and W-W Schottky barriers and N+-N+ ohmic contacts, measured at room temperature, are presented for α, β and heavier particles (up to Z≅10). The best results (average values of CCE and FWHM were 87% and 5%, respectively, for 5.48 MeV α particles from 241Am) give detectors with the Au-Au contact configuration. Detectors with the N+ contacts have worse parameters, about 30% for both, the CCE and FWHM, respectively. Nevertheless, such detectors operate at a low bias voltage, under 20 V. (orig.)

  1. Development of a coincidence system for radio-nuclide standardization using surface barrier detectors

    International Nuclear Information System (INIS)

    A system for the standardization of alpha-gamma or electron-X radionuclide emitters has been developed in the present work. The system consists of one or two surface barrier detectors for alpha or electron detection which are coupled to thin-window NaI (T1) crystals suitable for low energy X or gamma ray detection. The performance of the system has been verified by means of the standardization of 241Am, 137Cs and 109Cd solutions. The activity has been obtained using the extrapolation method applied to the 4Πα-γ and 2Πec-X coincidence technique. The surface barrier detection efficiency was varied by placing absorbers over the radioactive sources or by changing the source to detector distance. The results were compared to those obtained using conventional absolute systems based on gas-flow and pressurized 4Π proportional counters, or using radioactive solutions standardized in international comparisons spondored by the Bureau International des Poids et Mesures. The expect and measured activities agree within the experimental uncertainties which were: 0.2 % for 241Am, 0.7% for 137Cs and 0.6% for 109Cd. The ratio between the probabilities of (electron capture + internal conversion) and internal conversion for the K-shell of 109Cd has been determined. The result is: 2.8883 ± 0.016. (author)

  2. Dispersion of SiC nanoparticles in cellulose for study of tensile, thermal and oxygen barrier properties.

    Science.gov (United States)

    Kisku, Sudhir K; Dash, Satyabrata; Swain, Sarat K

    2014-01-01

    Cellulose/silicon carbide (cellulose/SiC) nanobiocomposites were prepared by solution technique. The interaction of SiC nanoparticles with cellulose were confirmed by Fourier transformed infrared (FTIR) spectroscopy. The structure of cellulose/SiC nanobiocomposites was investigated by X-ray diffraction (XRD), and transmission electron microscopy (TEM). The tensile properties of the nanobiocomposites were improved as compared with virgin cellulose. Thermal stabilities of cellulose/SiC nanobiocomposites were studied by thermogravimetric analysis (TGA). The cellulose/SiC nanobiocomposites were thermally more stable than the raw cellulose. It may be due to the delamination of SiC with cellulose matrix. The oxygen barrier properties of cellulose composites were measured using gas permeameter. A substantial reduction in oxygen permeability was obtained with increase in silicon carbide concentrations. The thermally resistant and oxygen barrier properties of the prepared nanobiocomposites may enable the materials for the packaging applications. PMID:24274511

  3. SiPM application for a detector for UHE neutrinos tested at Sphinx station

    Energy Technology Data Exchange (ETDEWEB)

    Iori, M. [Sapienza University of Rome, Piazzale A. Moro 5, 00185 Rome (Italy); Atakisi, I.O. [University of Kafkas, 36100 Kars (Turkey); Chiodi, G. [INFN, Sezione Roma 1, Piazzale A. Moro 2, 00185 Rome (Italy); Denizli, H. [Abant Izzet Baysal University, 14280 Bolu (Turkey); Ferrarotto, F. [INFN, Sezione Roma 1, Piazzale A. Moro 2, 00185 Rome (Italy); Kaya, M. [University of Kafkas, 36100 Kars (Turkey); Yilmaz, A. [Abant Izzet Baysal University, 14280 Bolu (Turkey); Recchia, L. [INFN, Sezione Roma 1, Piazzale A. Moro 2, 00185 Rome (Italy); Russ, J. [Carnegie-Mellon University, Pittsburgh, PA 15213 (United States)

    2014-04-01

    We present the preliminary test results of the prototype detector, working at Sphinx Observatory Center, Jungfraujoch (∼3800 m a.s.l.) HFSJG – Switzerland. This prototype detector is designed to measure large zenith angle showers produced by high energy neutrino interactions in the Earth crust. This station provides us an opportunity to understand if the prototype detector works safely (or not) under hard environmental conditions (the air temperature changes between −25 °C and −5 °C). The detector prototype is using silicon photomultiplier (SiPM) produced by SensL and DRS4 chip as read-out part. Measurements at different temperature at fixed bias voltage (∼29.5 V) were performed to reconstruct tracks by Time Of Flight.

  4. Optimization of a bolometer detector for ITER based on Pt absorber on SiN membrane.

    Science.gov (United States)

    Meister, H; Eich, T; Endstrasser, N; Giannone, L; Kannamüller, M; Kling, A; Koll, J; Trautmann, T; Detemple, P; Schmitt, S

    2010-10-01

    Any plasma diagnostic in ITER must be able to operate at temperatures in excess of 200 °C and neutron loads corresponding to 0.1 dpa over its lifetime. To achieve this aim for the bolometer diagnostic, a miniaturized metal resistor bolometer detector based on Pt absorbers galvanically deposited on SiN membranes is being developed. The first two generations of detectors featured up to 4.5 μm thick absorbers. Results from laboratory tests are presented characterizing the dependence of their calibration constants under thermal loads up to 450 °C. Several detectors have been tested in ASDEX Upgrade providing reliable data but also pointing out the need for further optimization. A laser trimming procedure has been implemented to reduce the mismatch in meander resistances below 1% for one detector and the thermal drifts from this mismatch. PMID:21061487

  5. Optimization of a bolometer detector for ITER based on Pt absorber on SiN membrane

    International Nuclear Information System (INIS)

    Any plasma diagnostic in ITER must be able to operate at temperatures in excess of 200 deg. C and neutron loads corresponding to 0.1 dpa over its lifetime. To achieve this aim for the bolometer diagnostic, a miniaturized metal resistor bolometer detector based on Pt absorbers galvanically deposited on SiN membranes is being developed. The first two generations of detectors featured up to 4.5 μm thick absorbers. Results from laboratory tests are presented characterizing the dependence of their calibration constants under thermal loads up to 450 deg. C. Several detectors have been tested in ASDEX Upgrade providing reliable data but also pointing out the need for further optimization. A laser trimming procedure has been implemented to reduce the mismatch in meander resistances below 1% for one detector and the thermal drifts from this mismatch.

  6. FemtoDAQ: A Low-Cost Digitizer for SiPM-Based Detector Studies and its Application to the HAWC Detector Upgrade

    CERN Document Server

    Skulski, Wojtek; BenZvi, Segev

    2016-01-01

    The FemtoDAQ is a low-cost two channel data acquisition system which we have used to investigate the signal characteristics of silicon photomultipliers (SiPMs) coupled to fast scintillators. The FemtoDAQ system can also be used to instrument low cost moderate performance passive detectors, and is suitable for use in harsh environments (e.g., high altitude). The FemtoDAQ is being used as a SiPM test bench for the High Altitude Water Cherenkov (HAWC) Observatory, a TeV gamma ray detector located 4100 m above sea level. Planned upgrades to the HAWC array can benefit greatly from SiPMs, a robust, low-voltage, low-cost alternative to traditional vacuum photomultipliers. The FemtoDAQ is used to power the SiPM detector front end, bias the SiPM, and digitize the photosensor output in a single compact unit.

  7. Development of neutron detector using sensor type surface barrier with (n,p) and (n,α) converters

    International Nuclear Information System (INIS)

    A Si semiconductor detector, surface barrier type, with a slim film of a converter material capable to produce charged particles was used as a sensor of neutrons in an environment of a zero power reactor. Two types of converters were used to improve the detection efficiency: (1) the polyethylene, n(CH2), which produces recoil protons from the (n,p) interaction and, (2) the 10B which generates a particle from the (n,alpha) reaction. The optimal thickness of those converters was determined experimentally and specifically for the polyethylene a mathematical model R(ips) = εp · N0 ·(1-e-Σ·Χ) ·e -μ·Χ + εn · N0 · -Σ · Χ was used to fit to the experimental data. For the polyethylene converter the thickness was of 0.058 cm (62.64 mg.cm-2) while for the 10B it was equal to 6.55 [μm (1.54 mg.cm-2). The converter of polyethylene or 10B improved the detection efficiency to a factor of 4.7 and 3.0 respectively. The comparison of the spectrum of the background radiation with the spectra of the recoil protons and the a radiation from the 10B it was concluded that the polyethylene presented better performance than the 10B converter. (author)

  8. A conductive surface coating for Si-CNT radiation detectors

    Science.gov (United States)

    Valentini, Antonio; Valentini, Marco; Ditaranto, Nicoletta; Melisi, Domenico; Aramo, Carla; Ambrosio, Antonio; Casamassima, Giuseppe; Cilmo, Marco; Fiandrini, Emanuele; Grossi, Valentina; Guarino, Fausto; Angela Nitti, Maria; Passacantando, Maurizio; Santucci, Sandro; Ambrosio, Michelangelo

    2015-08-01

    Silicon-Carbon Nanotube radiation detectors need an electrically conductive coating layer to avoid the nanotube detachment from the silicon substrate and uniformly transmit the electric field to the entire nanotube active surface. Coating material must be transparent to the radiation of interest, and must provide the drain voltage necessary to collect charges generated by incident photons. For this purpose various materials have been tested and proposed in photodetector and photoconverter applications. In this article interface properties and electrical contact behavior of Indium Tin Oxide films on Carbon Nanotubes have been analyzed. Ion Beam Sputtering has been used to grow the transparent conductive layer on the nanotubes. The films were deposited at room temperature with Oxygen/Argon mixture into the sputtering beam, at fixed current and for different beam energies. Optical and electrical analyses have been performed on films. Surface chemical analysis and in depth profiling results obtained by X-ray Photoelectron Spectroscopy of the Indium Tin Oxide layer on nanotubes have been used to obtain the interface composition. Results have been applied in photodetectors realization based on multi wall Carbon Nanotubes on silicon.

  9. Measurements of Si hybrid CMOS x-ray detector characteristics

    Science.gov (United States)

    Bongiorno, Stephen D.; Falcone, Abraham D.; Burrows, David N.; Cook, Robert

    2010-07-01

    The recent development of active pixel sensors as X-Ray focal plane arrays will place them in contention with CCDs on future satellite missions. Penn State University (PSU) is working with Teledyne Imaging Sensors (TIS) to develop X-Ray Hybrid CMOS devices (HCDs), a type of active pixel sensor with fast frame rates, adaptable readout timing and geometry, low power consumption, and inherent radiation hardness. CCDs have been used with great success on the current generation of X-Ray telescopes (e.g. Chandra, XMM, Suzaku, and Swift). However, their bucket-brigade readout architecture, which transfers charge across the chip with discrete component readout electronics, results in clockrate limited readout speeds that cause pileup (saturation) of bright sources and an inherent susceptibility to radiation induced displacement damage that limits mission lifetime. In contrast, HCDs read pixels through the detector substrate with low power, on-chip readout integrated circuits. Faster frame rates, achieved with adaptable readout timing and geometry, will allow the next generation's larger effective area telescopes to observe brighter sources free of pileup. In HCDs, radiation damaged lattice sites affect a single pixel instead of an entire row. The PSU X-ray group is currently testing 4 Teledyne HCDs, with low cross-talk CTIA devices in development. We will report laboratory measurements of HCD readnoise, interpixel-capacitance and its impact on event selection, linearity, and energy resolution as a function of energy.

  10. The Aachen muon detector prototype. Muon measurement using scintillator tiles with SiPM readout

    Energy Technology Data Exchange (ETDEWEB)

    Meissner, Rebecca; Bretz, Thomas; Hebbeker, Thomas; Lauscher, Markus; Middendorf, Lukas; Niggemann, Tim; Peters, Christine; Schumacher, Johannes [III. Physikalisches Institut A, RWTH Aachen University (Germany); Collaboration: Pierre Auger-Collaboration

    2015-07-01

    Muons being produced in air showers of ultra high energy cosmic rays carry important information on their characteristics such as the mass of the primary particle and the first hadronic interactions at the highest energies. In the context of the Pierre Auger Observatory this upgrade would enable an enhanced primary particle identification as well as the verification of shower simulation models. For this purpose, a simple and robust detector design with scintillator tiles and SiPM readout is being developed, the Aachen Muon Detector (AMD). AMD could be situated below the SD tanks which would provide shielding from the electromagnetic part of the shower. In total, 64 scintillating tiles form the sensitive area of the detector. Wavelength-shifting fibres are inserted into the tiles in sigma-shape to collect the light and are coupled to optical fibres to guide it onto the photosensitive SiPMs. By reading out each SiPM individually, an excellent and low-background performance is expected. Currently the AMD prototype is being built in Aachen and in parallel SiPM and electronics characteristics are being evaluated.

  11. Development of a alpha spectrometer system with the surface barrier detector

    International Nuclear Information System (INIS)

    The aim of this work is the development of an α spectrometer of low cost and home made technology. The spectrometer is mounted in a double NIM module and includes a surface barrier detector and dedicate electronic system. Six barrier surface detectors were made, three of which with η type silicon wafer 3350 Ω.cm, 270mm2 and three other with ρ type silicon wafer 5850 Ω.cm and 220mm2. The rectifier and the ohmic contacts were prepared at high vacuum (10-2 to 10-3 Pa) evaporation with 40μg/cm2 of Au and Al respectively for the η type detectors, and with Al and Au respectively for the ρ type detectors. The electronic system is composed by a low noise charge sensitive preamplifier with the operational amplifier LF-356 mounted with 1OOMΩ feedback resistor and a 0.5 pF capacitor. The linear amplifier is also based in the LF-356 and the LM-310 operational amplifier. The bipolar output is formatted through a (CR)2-(RC)4 shaping network and the unipolar output is obtained through a CR-(RC)4 shaping system which is sufficient to realize a almost true Gaussian shaping pulse with a time constant of 3.0μs. This format was chosen because we can expect a low counting rate and the gaussian pulse can improve the signal/noise ratio. The first CR differentiation has also a active pole-zero cancellation network.The resolution of detectors for 241Am α particles at room temperature (24 degree) vary 21 to 44 keV FWHM. The electronic noise of the noise of the system is 7.5 keV FWHM at OpF input capacitance. The overall resolution of the spectrometer was found to be 62 keV FWHM at room temperature. The simplicity of the electronic system, the low cost of the construction and the overall resolution show that this alpha spectrometer can be readily used in measurements where high resolution is not a premium. (author)

  12. SiD Linear Collider Detector R&D, DOE Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Brau, James E. [Univ. of Oregon, Eugene, OR (United States); Demarteau, Marcel [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-05-15

    The Department of Energy’s Office of High Energy Physics supported the SiD university detector R&D projects in FY10, FY11, and FY12 with no-cost extensions through February, 2015. The R&D projects were designed to advance the SiD capabilities to address the fundamental questions of particle physics at the International Linear Collider (ILC): • What is the mechanism responsible for electroweak symmetry breaking and the generation of mass? • How do the forces unify? • Does the structure of space-time at small distances show evidence for extra dimensions? • What are the connections between the fundamental particles and forces and cosmology? Silicon detectors are used extensively in SiD and are well-matched to the challenges presented by ILC physics and the ILC machine environment. They are fast, robust against machine-induced background, and capable of very fine segmentation. SiD is based on silicon tracking and silicon-tungsten sampling calorimetry, complemented by powerful pixel vertex detection, and outer hadronic calorimetry and muon detection. Radiation hard forward detectors which can be read out pulse by pulse are required. Advanced calorimetry based on a particle flow algorithm (PFA) provides excellent jet energy resolution. The 5 Tesla solenoid is outside the calorimeter to improve energy resolution. PFA calorimetry requires fine granularity for both electromagnetic and hadronic calorimeters, leading naturally to finely segmented silicon-tungsten electromagnetic calorimetry. Since silicon-tungsten calorimetry is expensive, the detector architecture is compact. Precise tracking is achieved with the large magnetic field and high precision silicon microstrips. An ancillary benefit of the large magnetic field is better control of the e⁺e⁻ pair backgrounds, permitting a smaller radius beampipe and improved impact parameter resolution. Finally, SiD is designed with a cost constraint in mind. Significant advances and new capabilities have been made and

  13. Development of a compact 25-channel preamplifier module for Si-pad detectors of the BARC-CPDA

    International Nuclear Information System (INIS)

    The BARC Charged Particle Detector Array modules use indigenously developed Si pad detectors as their first element. Total number of charge sensitive pre-amplifiers required for the Si-pad detectors is 250. One of the main ideas here is a layout of five pre-amplifiers connected with one Si-pad detector (called a bank of preamplifiers). In the present work, a 25-channel pre-amplifier module that can cater to 5 independent Si-pad detectors, or a five-bank module, has been developed. This module uses pre-amp hybrid chips A1422H from CAEN S.p.A. and is housed in a double width NIM standard box. The module has been tested for performance using proton and ''7Li beams from FOTIA facility, Trombay

  14. Ni/SiC–6H Schottky Barrier Diode interfacial states characterization related to temperature

    Energy Technology Data Exchange (ETDEWEB)

    Benamara, Mekki [Applied Microelectronics Laboratory (AMEL), Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes (Algeria); Anani, Macho, E-mail: anani66@yahoo.fr [Laboratoire des Réseaux de Communications, d’Architecture et de Multimédia, Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes (Algeria); Akkal, Boudali; Benamara, Zineb [Applied Microelectronics Laboratory (AMEL), Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes (Algeria)

    2014-08-01

    Highlights: • This article is dealing with the evaluation of the mean interfacial states density of a Ni/SiC–6H Schottky Barrier Diode related to temperature. It appears a phenomenon of two barriers materializing one high diode and one low one. The other conclusion is that the interfacial states are diminishing when temperature is increasing. • This article has not, also, been published previously, is not under consideration for publication elsewhere, and its publication is approved by all authors. • The article has been correctly and thoroughly inspected and revised according to the reviewers’ recommendations. - Abstract: This study presents a Ni/SiC–6H Schottky Barrier Diode (SBD) characterization at different temperatures going from 77 K to 450 K. The electronic properties of this diode were reported by the analysis of its C(V{sub G}) and I(V{sub G}) characteristics as a function of temperature. At low temperature when T < 100 K the high part ideality factors n{sup H} were close to 2 showing that the conduction is dominated by the generation–recombination at deep centers. Also, the values of low part ideality factor n{sup L} varied from 2.69 down to 1.89. These values were also much closer to 2, showing that the conduction mechanism was then dominated by a tunneling current assisted by default. The mean interfacial states density D{sub s(mean)} decreased with increasing temperature from 1.2×10{sup 13} eV{sup −1} cm{sup −2} to 6.3 × 10{sup 12} eV{sup −1} cm{sup −2}. This reducing appeared to be due to the restructuring and rearrangement which occurs under molecules thermal activation within the Ni/SiC–6H metal/semiconductor interface.

  15. Ni/SiC–6H Schottky Barrier Diode interfacial states characterization related to temperature

    International Nuclear Information System (INIS)

    Highlights: • This article is dealing with the evaluation of the mean interfacial states density of a Ni/SiC–6H Schottky Barrier Diode related to temperature. It appears a phenomenon of two barriers materializing one high diode and one low one. The other conclusion is that the interfacial states are diminishing when temperature is increasing. • This article has not, also, been published previously, is not under consideration for publication elsewhere, and its publication is approved by all authors. • The article has been correctly and thoroughly inspected and revised according to the reviewers’ recommendations. - Abstract: This study presents a Ni/SiC–6H Schottky Barrier Diode (SBD) characterization at different temperatures going from 77 K to 450 K. The electronic properties of this diode were reported by the analysis of its C(VG) and I(VG) characteristics as a function of temperature. At low temperature when T < 100 K the high part ideality factors nH were close to 2 showing that the conduction is dominated by the generation–recombination at deep centers. Also, the values of low part ideality factor nL varied from 2.69 down to 1.89. These values were also much closer to 2, showing that the conduction mechanism was then dominated by a tunneling current assisted by default. The mean interfacial states density Ds(mean) decreased with increasing temperature from 1.2×1013 eV−1 cm−2 to 6.3 × 1012 eV−1 cm−2. This reducing appeared to be due to the restructuring and rearrangement which occurs under molecules thermal activation within the Ni/SiC–6H metal/semiconductor interface

  16. Characterization of Si hybrid CMOS detectors for use in the soft x-ray band

    Science.gov (United States)

    Prieskorn, Zachary R.; Griffith, Christopher V.; Bongiorno, Stephen D.; Falcone, Abraham D.; Burrows, David N.

    2013-09-01

    We report on the characterization of four HAWAII Hybrid Si CMOS detectors (HCD) developed for use as X-ray detectors as part of a joint program between Penn State University and Teledyne Imaging Sensors (TIS). Interpixel capacitive crosstalk (IPC) has been measured for standard H1RG detectors as well as a specially developed H2RG that uses a unique bonding structure. The H2RG shows significant reduction in IPC, as reported by Griffith et al. 2012. Energy resolution at 1.5 & 5.9 keV was measured as well as read noise for each detector. Dark current as a function of temperature is reported from 150 - 210 K and dark current figures of merit are estimated for each detector. We also discuss upcoming projects including testing of a new HCD called the Speedster-EXD. This prototype detector will have a low noise, high gain CTIA to reduce IPC and read noise as well as in-pixel CDS and event flagging. In the coming year PSU and TIS will begin work on a project to incorporate CTIA and CDS circuitry into the ROIC of a HAWAII HCD like detector to satisfy the small pixel and high rate needs of future X-ray observatories.

  17. As-Al recoil implantation through Si{sub 3}N{sub 4} barrier layer

    Energy Technology Data Exchange (ETDEWEB)

    Godignon, P. E-mail: philippe@cnm.es; Morvan, E.; Montserrat, J.; Jorda, X.; Flores, D.; Rebollo, J

    1999-01-01

    Al recoil implantation have been shown to be a possible alternative to direct Al ion implantation to avoid usual problems linked with Al sources. Poor efficiency of the recoil + annealing process is observed if no barrier or an oxyde screen layers are used. This problem can be solved using a Si{sub 3}N{sub 4} screen layer. Then, P-N and N{sup +}/P/N structures can be obtained with deep low doped P-well with reduced thermal budget.

  18. Study of resonances in 16O, 28Si elastic scattering near the Coulomb barrier

    International Nuclear Information System (INIS)

    The 28Si + 16O elastic scattering has been studied above the Coulomb barrier. Height angular distributions has been measured and analyzed between 18.67 MeV and 22.29 MeV center of mass energy. An optical model analysis shows that the very deep and transparent potentials reproduce the oscillations at back angles of the angular distributions. This result is confirmed by a coupled equation analysis of the elastic and inelastic scattering of the first 2+ state of 28Si. A semi-classical analysis shows a pole in these very transparent optical potentials. An analysis with only one Regge pole by angular distribution reproduces perfectly the data. An phase shift analysis confirms the presence of resonant quasi-molecular states of short lifetime with overlapping width to explain the first structure observed in the excitation function measured at 1800 in the center of mass. A spin value has been assigned at these resonant states

  19. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

    Science.gov (United States)

    Fengping, Chen; Yuming, Zhang; Hongliang, Lü; Yimen, Zhang; Hui, Guo; Xin, Guo

    2011-06-01

    4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work.

  20. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode*

    Institute of Scientific and Technical Information of China (English)

    Chen Fengping; Zhang Yuming; Lü Hongliang; Zhang Yimen; Guo Hui; Guo Xin

    2011-01-01

    4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent Ptype ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively.Furthermore, the P-type ohmic contact is studied in this work.

  1. Improvements in Realizing 4H-SiC Thermal Neutron Detectors

    OpenAIRE

    Issa F.; Vervisch V.; Ottaviani L.; Szalkai D.; Vermeeren L.; Lyoussi A.; Kuznetsov A.; Lazar M.; Klix A.; Palais O.; Hallén A.

    2016-01-01

    In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted 10B thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. ...

  2. Characterization of Si Hybrid CMOS Detectors for use in the Soft X-ray Band

    OpenAIRE

    Prieskorn, Zachary; Griffith, Christopher V.; Bongiorno, Stephen D.; Falcone, Abraham D.; Burrows, David N.

    2013-01-01

    We report on the characterization of four Teledyne Imaging Systems HAWAII Hybrid Si CMOS detectors designed for X-ray detection. Three H1RG detectors were studied along with a specially configured H2RG. Read noise measurements were performed, with the lowest result being 7.1 e- RMS. Interpixel capacitive crosstalk (IPC) was measured for the three H1RGs and for the H2RG. The H1RGs had IPC upper limits of 4.0 - 5.5 % (up & down pixels) and 8.7 - 9.7 % (left & right pixels), indicating a clear a...

  3. Low dielectric constant a-SiOC:H films as copper diffusion barrier

    Science.gov (United States)

    Koh, Yee Wee; Loh, Kian Ping; Rong, Liu; Wee, A. T. S.; Huang, Liu; Sudijono, J.

    2003-01-01

    A low-k dielectric barrier based on silicon oxycarbide for copper damascene processes has been developed in this work. The optimal process conditions that allow the deposition of silicon oxycarbide films with a dielectric constant of 3.74 and copper diffusion depth of 290 Å after thermal stress at 400 °C for 3 h has been identified. Copper diffusion depth is defined as the copper and dielectric interfacial region with three-order magnitude reduction in copper concentration. A multilayered structure consisting of black diamond/SiOC/Cu/TaN/Si is fabricated. 3-methyl silane and oxygen in varying concentration is used for the deposition of SiOC using plasma enhanced chemical vapor deposition. The composition of the films is studied by Fourier transform infrared spectroscopy. Dielectric constant and dielectric breakdown of the films are also evaluated. Secondary ion mass spectrometry is employed to investigate the copper diffusion property of the films. The electronic component of the dielectric constant has been found to be most significant in affecting the overall dielectric constant in SiOC films.

  4. Active conductivity of plane two-barrier resonance tunnel structure as operating element of quantum cascade laser or detector

    OpenAIRE

    Ju.O. Set; M.V. Tkach; Matijek, V. O.; O.M. Voitsekhivska

    2011-01-01

    Within the model of rectangular potentials and different effective masses of electrons in different elements of plane two-barrier resonance tunnel structure there is developed a theory of spectral parameters of quasi-stationary states and active conductivity for the case of mono-energetic electronic current interacting with electromagnetic field. It is shown that the two-barrier resonance tunnel structure can be utilized as a separate or active element of quantum cascade laser or detector. Fo...

  5. High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS)

    Science.gov (United States)

    Nguyen, Khai V.; Pak, Rahmi O.; Oner, Cihan; Mannan, Mohammad A.; Mandal, Krishna C.

    2015-08-01

    High barrier Schottky contact has been fabricated on 50 μm n-type 4H-SiC epitaxial layers grown on 350 μm thick substrate 8° off-cut towards the [11̅20] direction. The 4H-SiC epitaxial wafer was diced into 10 x 10 mm2 samples. The metal-semiconductor junctions were fabricated by photolithography and dc sputtering with ruthenium (Ru). The junction properties were characterized through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Detectors were characterized by alpha spectroscopy measurements in terms of energy resolution and charge collection efficiency using a 0.1 μCi 241Am radiation source. It was found that detectors fabricated from high work function rare transition metal Ru demonstrated very low leakage current and significant improvement of detector performance. Defect characterization of the epitaxial layers was conducted by deep level transient spectroscopy (DLTS) to thoroughly investigate the defect levels in the active region. The presence of a new defect level induced by this rare transition metal-semiconductor interface has been identified and characterized.

  6. RADIATION HARDNESS / TOLERANCE OF SI SENSORS / DETECTORS FOR NUCLEAR AND HIGH ENERGY PHYSICS EXPERIMENTS.

    Energy Technology Data Exchange (ETDEWEB)

    LI,Z.

    2002-09-09

    Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, and space charge concentration. The increase in space charge concentration is particularly damaging since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. Several strategies can be used to make Si detectors more radiation had tolerant to particle radiations. In this paper, the main radiation induced degradations in Si detectors will be reviewed. The details and specifics of the new engineering strategies: material/impurity/defect engineering (MIDE); device structure engineering (DSE); and device operational mode engineering (DOME) will be given.

  7. Energy and time of flight measurements of REX-ISOLDE stable beams using Si detectors

    CERN Document Server

    Cantero, E D; Fraser, M A; Lanaia, D; Sosa, A; Voulot, D; Zocca, F

    2014-01-01

    In this paper we present energy and time spectroscopy measurements for the stable beams of REX-ISOLDE obtained using Si detectors. By using an alpha source as a calibration reference, the absolute energy E of stable beam particles (A/q = 4) was determined in spectroscopy mode in the energy range 1 MeV < E < 8 MeV (0.30 MeV/u < E/A < 1.87 MeV/u). The time of flight of the beam particles (2.18 MeV/u < E/A < 2.27 MeV/u) was determined by installing identical Si detectors in two diagnostic boxes separated by 7.7 m. The results obtained with these two techniques are compared with the values obtained by dipole scans using a bending magnet. The measurements took place between January and February of 2013.

  8. Charge-sensitive poly-silicon TFT amplifiers for a-Si:H pixel particle detectors

    International Nuclear Information System (INIS)

    Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec

  9. Application of a-Si:H radiation detectors in medical imaging

    International Nuclear Information System (INIS)

    Monte Carlo simulations of a proposed a-Si:H-based current-integrating gamma camera were performed. The analysis showed that the intrinsic resolution of such a camera was 1 ∼ 2.5 mm, which is somewhat better than that of a conventional gamma camera, and that the greater blurring, due to the detection of scattered γ-rays, could be reduced considerably by image restoration techniques. This proposed gamma camera would be useful for imaging shallow organs such as the thyroid. Prototype charge-storage a-Si:H pixel detectors for such a camera were designed, constructed and tested. The detectors could store signal charge as long as 5 min at -26C. The thermal generation current in reverse biased a-Si:H p-i-n photodetectors was investigated, and the Poole-Frenkel effect was found to be the most significant source of the thermal generation current. Based on the Poole-Frenkel effect, voltage- and time-dependent thermal generation current was modeled. Using the model, the operating conditions of the proposed a-Si:H gamma camera, such as the operating temperature, the operating bias and the γ-scan period, could be predicted. The transient photoconductive gain mechanism in various a-Si:H devices was investigated for applications in digital radiography. Using the a-Si:H photoconductors in n-i-n configuration in pixel arrays, enhancement in signal collection (more than 200 times higher signal level) can be achieved in digital radiography, compared to the ordinary p-i-n type a-Si:H x-ray imaging arrays

  10. Energy response and dose linearity of LiF:Mg, Cu, Na, Si TL detector

    International Nuclear Information System (INIS)

    The photon energy response of LiF : Mg, Cu, Na, Si thermoluminescence detector was measured using X-ray generator(20-118 keV) and 137Cs irradiator and its relative energy response appeared to be 0.825 for 20 keV photon normalized to that of 137Cs photon. The dose response was linear within the range of 10-4Gy - 20Gy, but shows sublinearity above 50Gy

  11. Radiation tolerance of the FOXFET biasing scheme for AC-coupled Si microstrip detectors

    International Nuclear Information System (INIS)

    The radiation response of FOXFETs has been studied for proton, gamma and neutron exposures. The punch-through behavior, which represents the normal FET operating conditions in Si microstrip detectors, has been found to be much less sensitive to radiation damage than threshold voltage. The device performance has been elucidated by means of two-dimensional simulations. The main radiation effects have been also taken into account in the numerical analysis and separately examined

  12. A simple low-noise cryogenic preamplifier for silicon surface barrier detectors

    International Nuclear Information System (INIS)

    A simple-high resolution charge sensitive preamplifier for surface barrier detectors (SBD) is described which uses drain feedback for charge restoration. It is shown that electronic noise can be reduced from 5 keV for a standard SBD-preamplifier system to 0.5 keV if one cools the SBD to 77 K and the field effect transistor (FET) to about 100 K and if one uses a SBD-FET assembly which is free from microphonics. The performance is demonstrated by measuring proton induced X-rays of Mg which have an energy of 1.25 keV. This large noise reduction results also in an enhancement of timing resolution by a factor 3. (orig.)

  13. Neutron detector based on 4H-SiC Schottky diode

    International Nuclear Information System (INIS)

    A neutron detector exploiting the 6Li(n, α)3H reaction was fabricated by using semiconductor epitaxial 4H-SiC as the detection medium. This work aimed to develop neutron detector with increased resistance to radiation effects, thus it can be used in harsh environments. The 6LiF neutron converter layer was deposited by magnetron sputtering method and was characterized by scanning electron microscope (SEM). While the reverse voltages of the studied diode were tested from 10 V up to 600 V, the reverse current was below 6.4 nA, indicating a successful formation of Schottky contact between epitaxial 4H-SiC and Ni. The resolution factor for 5.486 MeV alpha particles was acquired as 4.5% by means of a 241Am source to this purpose. Response signals of neutron detector based on 4H-SiC Schottky diode to thermal neutron generated by critical assembly and slowed down by paraffin wax were obtained. (authors)

  14. Simulation of 4H-SiC detectors for ultra fast particle spectroscopy

    International Nuclear Information System (INIS)

    We present a study on the high speed detection capability of Nickel/4H-SiC Schottky junctions for protons and alpha particles with different energies in the MeV range. The particle path and the distribution of the deposited energy were calculated by SRIM. The detector current signals are calculated by adding the contributions of all generated charge along the particle path. The voltage signals across a 50 Ω  resistor load are also derived considering the detector capacitance. Simulations have been performed for different particle energies and detector bias voltages. The fastest simulated response to a 5.5 MeV alpha particle shows a rise-time of 330 ps and a pulse width of 730 ps FWHM, which are in good agreement with experimental values. Similar values have been predicted for 2 MeV protons

  15. High resolution alpha particle detectors based on 4H-SiC epitaxial layer

    International Nuclear Information System (INIS)

    We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of alpha particles. A thin blocking contact of Ni/Au (15 nm) was used to minimize the influence on alpha particles energy. Current-voltage characteristics of the detector were measured and a low current density below 0.3 nAcm−2 was observed at room temperature. 239Pu241Am244Cm was used as a source of alpha particles within the energy range between 5.1 MeV and 5.8 MeV for detector testing. The charge collection efficiency close to 100 % at reverse bias exceeding 50 V was determined. The best spectrometric performance shows a pulse height spectrum at a reverse bias of 200 V giving an energy resolution of 0.25 % in the full width and half maximum for 5.486 MeV of 241Am

  16. Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO2 superlattices

    International Nuclear Information System (INIS)

    The effect of the annealing temperature and the SiO2 barrier thickness of silicon nanocrystal (NC)/SiO2 superlattices (SLs) on their structural and optical properties is investigated. Energy-filtered transmission electron microscopy (TEM) revealed that the SL structure is maintained for annealing temperatures up to 1150 °C, with no variation on the nanostructure morphology for different SiO2 barrier thicknesses. Nevertheless, annealing temperatures as high as 1250 °C promote diffusion of Si atoms into the SiO2 barrier layers, which produces larger Si NCs and the loss of the NC size control expected from the SL approach. Complementary Raman scattering measurements corroborated these results for all the SiO2 and Si-rich oxynitride layer thicknesses. In addition, we observed an increasing crystalline fraction up to 1250 °C, which is related to a decreasing contribution of the suboxide transition layer between Si NCs and the SiO2 matrix due to the formation of larger NCs. Finally, photoluminescence measurements revealed that the emission of the superlattices exhibits a Gaussian-like lineshape with a maximum intensity after annealing at 1150 °C, indicating a high crystalline degree in good agreement with Raman results. Samples submitted to higher annealing temperatures display a progressive emission broadening, together with an increase in the central emission wavelength. Both effects are related to a progressive broadening of the size distribution with a larger mean size, in agreement with TEM observations. On the other hand, whereas the morphology of the Si NCs is unaffected by the SiO2 barrier thickness, the emission properties are slightly modified. These observed modifications in the emission lineshape allow monitoring the precipitation process of Si NCs in a direct non-destructive way. All these experimental results evidence that an annealing temperature of 1150 °C and 1-nm SiO2 barrier can be reached whilst preserving the SL structure, being thus

  17. Characteristics of fabricated si PIN-type radiation detectors on cooling temperature

    International Nuclear Information System (INIS)

    Si PIN photodiode radiation detectors with three different active areas (3×3 mm2, 5×5 mm2, and 10×10 mm2) were designed and fabricated at the Korea Atomic Energy Research Institute (KAERI) for low energy X- and gamma-ray detection. In Si-based semiconductor radiation detectors, one of the noise sources is thermal noise, which degrades their energy resolution performance. In this study, the temperature effects on the energy resolution were investigated using a 3×3 mm2 active area PIN photodiode radiation detector using a Thermoelectric Module (TEM) from room temperature to −23 °C. Energy resolutions from 25 keV auger electrons to 81 keV gamma-ray from a Ba-133 calibration source were measured and compared at every 10 °C interval. At −23 °C, energy resolutions were improved by 15.6% at 25 keV, 4.0% at 31 keV, and 1.2% at 81 keV in comparison with resolutions at room temperature. CsI(Tl)/PIN photodiode radiation detectors were also fabricated for relatively high energy gamma-ray detection. Energy resolutions for Cs-137, Co-60, and Na-22 sources were measured and compared with the spectral responsivity

  18. Characteristics of fabricated si PIN-type radiation detectors on cooling temperature

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han Soo; Jeong, Manhee; Kim, Young Soo [Korea Atomic Energy Research Institute, Jeongeup-si 580-185 (Korea, Republic of); Lee, Dong Hun [Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of); Cho, Seung Yeon [Environmental Health Center, Yonsei University, Wonju-si 1184-4 (Korea, Republic of); Ha, Jang Ho [Korea Atomic Energy Research Institute, Jeongeup-si 580-185 (Korea, Republic of)

    2015-06-01

    Si PIN photodiode radiation detectors with three different active areas (3×3 mm{sup 2}, 5×5 mm{sup 2}, and 10×10 mm{sup 2}) were designed and fabricated at the Korea Atomic Energy Research Institute (KAERI) for low energy X- and gamma-ray detection. In Si-based semiconductor radiation detectors, one of the noise sources is thermal noise, which degrades their energy resolution performance. In this study, the temperature effects on the energy resolution were investigated using a 3×3 mm{sup 2} active area PIN photodiode radiation detector using a Thermoelectric Module (TEM) from room temperature to −23 °C. Energy resolutions from 25 keV auger electrons to 81 keV gamma-ray from a Ba-133 calibration source were measured and compared at every 10 °C interval. At −23 °C, energy resolutions were improved by 15.6% at 25 keV, 4.0% at 31 keV, and 1.2% at 81 keV in comparison with resolutions at room temperature. CsI(Tl)/PIN photodiode radiation detectors were also fabricated for relatively high energy gamma-ray detection. Energy resolutions for Cs-137, Co-60, and Na-22 sources were measured and compared with the spectral responsivity.

  19. Quantum efficiency of Si Hybrid CMOS detectors in the soft X-ray band

    Science.gov (United States)

    Prieskorn, Zachary; Bongiorno, Stephen; Burrows, David; Falcone, Abraham; Griffith, Christopher; Nikoleyczik, Jonathan; Wells, Mark; PSU X-ray Instrumentation Group Team

    2015-04-01

    X-ray sensitive Si Hybrid CMOS detectors (HCDs) will potentially replace X-ray CCDs in the focal planes of future X-ray observatories. HCDs improve on the performance of CCDs in numerous areas: faster read out time, windowed read out mode, less susceptibility to radiation & micrometeoroid damage, and lower power consumption. Understanding the detector quantum efficiency (QE) is critical for estimating the sensitivity of an X-ray instrument. We report on the QE for multiple energies in the soft X-ray band of four HCDs based on the Teledyne Imaging Sensors HyViSITM detectors. These detectors have Al optical blocking filters deposited directly on the Si substrate; these filters vary in thickness from 180 - 1000 Å. We estimate the QE with a 1D slab absorption model and find good agreement between the model and our results across an energy range from 0.677 - 8.05 keV. This work was supported by NASA Grants NNG05WC10G, NNX08AI64G, and NNX11AF98G.

  20. Energy measurement and fragment identification using digital signals from partially depleted Si detectors

    International Nuclear Information System (INIS)

    A study of identification properties of a Si-Si ΔE-E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias voltages have been used, one corresponding to full depletion, the others associated with a depleted layer ranging from 90% to 60% of the detector thickness. Fragment identification has been performed using either the ΔE-E technique or the Pulse Shape Analysis (PSA). Both detectors are reverse mounted: particles enter from the low field side, to enhance the PSA performance. The achieved charge and mass resolution has been quantitatively expressed using a Figure of Merit (FoM). Charge collection efficiency has been evaluated and the possibility of energy calibration corrections has been considered. We find that the ΔE-E performance is not affected by incomplete depletion even when only 60% of the wafer is depleted. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds are higher than at full depletion. Good isotopic identification via PSA has been obtained from a partially depleted detector, whose doping uniformity is not good enough for isotopic identification at full depletion. (orig.)

  1. Characterization of Si Hybrid CMOS Detectors for use in the Soft X-ray Band

    Science.gov (United States)

    Prieskorn, Zachary; Griffith, C.; Bongiorno, S.; Falcone, A.; Burrows, D. N.

    2014-01-01

    In a joint program between Penn State University and Teledyne Imaging Sensors a soft X-ray detector based on the HAWAII Hybrid Si CMOS detector (HCD) has been developed. HCDs could potentially be the optimum detectors for the next generation of X-ray missions, especially those with focused optics and/or large effective area. These innovative detectors are active pixel sensors (APS) which allow a pixel to be read through individual in-pixel electronics, without the need to transfer charge across many pixels, in contrast to a CCD. They are made by bonding a Si absorbing layer to a pixelated CMOS readout, allowing the two layers to be optimized independently. The advantages of this design compared to CCDs are high speed timing 100 μs in full imaging mode), a flexible windowed readout to reduce pile-up, dramatically improved radiation hardness and resistance to micrometeoroid damage, and reduced power requirements. We present recent measurements of energy resolution, read noise, inter-pixel crosstalk, quantum efficiency, and dark current for four of these devices.

  2. Time over threshold readout method of SiPM based small animal PET detector

    International Nuclear Information System (INIS)

    Complete text of publication follows. The aim of the work was to design a readout concept for silicon photomultiplier (SiPM) sensor array used in small animal PET scanner. The detector module consist of LYSO 35x35 scintillation crystals, 324 SiPM sensors (arranged in 2x2 blocks and those quads in a 9x9 configuration) and FPGA based readout electronics. The dimensions of the SiPM matrix are area: 48x48 mm2 and the size of one SiPM sensor is 1.95x2.2 mm2. Due to the high dark current of the SiPM, conventional Anger based readout method does not provide sufficient crystal position maps. Digitizing the 324 SiPM channels is a straightforward way to obtain proper crystal position maps. However handling hundreds of analogue input channels and the required DSP resources cause large racks of data acquisition electronics. Therefore coding of the readout channels is required. Proposed readout method: The coding of the 324 SiPMs consists two steps: Step 1) Reduction of the channels from 324 to 36: Row column readout, SiPMs are connected to each other in column by column and row-by row, thus the required channels are 36. The dark current of 18 connected SiPMs is small in off for identifying pulses coming from scintillating events. Step 2) Reduction of the 18 rows and columns to 4 channels: Comparators were connected to each rows and columns, and the level was set above the level of dark noise. Therefore only few comparators are active when scintillation light enters in the tile. The output of the comparator rows and columns are divided to two parts using resistor chains. Then the outputs of the resistor chains are digitized by a 4 channel ADC. However instead of the Anger method, time over threshold (ToT) was used. Figure 1 shows the readout concept of the SiPM matrix. In order to validate the new method and optimize the front-end electronics of the detector, the analogue signals were digitized before the comparators using a CAEN DT5740 32 channel digitizer, then the

  3. Extracting information from partially depleted Si detectors with digital sampling electronics

    Directory of Open Access Journals (Sweden)

    Pastore G.

    2015-01-01

    Full Text Available A study of the identification properties and of the energy response of a Si-Si-CsI(Tl ΔE-E telescope exploiting a partially depleted second Si stage has been performed. Five different bias voltages have been applied to the second stage of the telescope, one corresponding to full depletion, the others associated with a depleted layer ranging from 60% to 90% of the detector thickness. Fragment identification has been obtained using either the ΔE-E technique or the Pulse Shape Analysis (PSA. Charge collection efficiency has been evaluated. The ΔE-E performance is not affected by incomplete depletion. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds increase.

  4. Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra...

  5. The Development of 2700-3000 F Environmental Barrier Coatings for SiC/SiC Ceramic Matrix Composites: Challenges and Opportunities

    Science.gov (United States)

    Zhu, Dongming

    2015-01-01

    Environmental barrier coatings (EBCs) and SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in future turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is a key to enable the applications of the envisioned 2700-3000F EBC - CMC systems to help achieve next generation engine performance and durability goals. This paper will primarily address the performance requirements and design considerations of environmental barrier coatings for turbine engine applications. The emphasis is placed on current NASA candidate environmental barrier coating systems for SiCSiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. The efforts have been also directed to developing prime-reliant, self-healing 2700F EBC bond coat; and high stability, lower thermal conductivity, and durable EBC top coats. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, cyclic durability, erosion-impact resistance, and long-term system performance will be described. The research and development opportunities for turbine engine environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling will be discussed.

  6. The ultraviolet radiation detectors based on wide-bandgap Schottky barrier structures

    CERN Document Server

    Blank, T V; Konstantinov, O V

    2002-01-01

    Recently, much attention has been given to measure and control ultraviolet radiation (UVR) from the Sun and artificial sources. We present photodetectors based on different wide-bandgap surface-barrier structures, which exhibit linear photocurrent-radiant flux characteristics in the range 10 sup - sup 2 -10 sup 3 W/m sup 2 and can register different types of UVR. The use of light filter UFS-6 with GaP photodetector results in a spectral photosensitivity range corresponding to the Sun UV radiation if observed on Earth. The spectral sensitivity range of the photodetectors based on 4H-SiC is near the spectrum of relative effectiveness of various wavelengths in bactericidal UVR. The photosensitivity of the surface-barrier photodetectors based on wide-bandgap semiconductors exhibits the essential decline in the short-wavelength UVR region (5-6 eV), which is the region of intrinsic absorption of the semiconductor. We propose a hot exciton model, according to which the hot excitons can form in the process of the pho...

  7. Tuning a Schottky barrier of epitaxial graphene/4H-SiC (0001) by hydrogen intercalation

    Energy Technology Data Exchange (ETDEWEB)

    Dharmaraj, P.; Justin Jesuraj, P.; Jeganathan, K., E-mail: kjeganathan@yahoo.com [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)

    2016-02-01

    We report the electron transport properties of epitaxial graphene (EG) grown on 4H-SiC (0001) by low energy electron-beam irradiation. As-grown EG (AEG) on SiC interface exhibits rectifying current-voltage characteristics with a low Schottky barrier (SB) of 0.55 ± 0.05 eV and high reverse current leakage. The SB of AEG/SiC junction is extremely impeded by the Fermi level pinning (FLP) above the Dirac point due to charged states at the interface. Nevertheless, a gentle hydrogen intercalation at 900 °C enables the alleviation of both FLP and carrier scattering owing to the saturation of dangling bonds as evidenced by the enhancement of SB (0.75 ± 0.05 eV) and high electron mobility well excess of 6000 cm{sup 2} V{sup −1} s{sup −1}.

  8. Translation from Schottky Barrier to Atomic Bridging-Type Surface Photovoltages in Cr-Aqueous-Solution-Rinsed Si(001) Wafers

    Science.gov (United States)

    Shimizu, Hirofumi; Sanada, Yuji

    2012-05-01

    The Cr(OH)3/n-Si Schottky-barrier-type AC surface photovoltage (SPV) in n-type Si(001) wafers fades away during long air exposure at room temperature and/or thermal oxidation at 100 °C for a short time (10 min), indicating a collapse of the Schottky barrier. At 100 °C, the AC SPV reappears with a longer duration time in n-type Si wafers, explaining the occurrence and growth of a negative oxide charge because of the formation of an atomic bridging (CrOSi)- or CrO2- network reported previously. At 200 °C, the AC SPV approaches a strong inversion state in n-type Si. In contrast, in p-type Si(001) wafers, the AC SPV decreases with oxidation duration time at 100 °C. At 200 °C, the AC SPV completely disappears in p-type Si. This result explains why a positive fixed oxide charge in p-type Si was compensated for by the growth of a Cr-induced negative charge [(CrOSi)- or CrO2- network]. This reverse interrelation gives evidence that the translation occurs from the Schottky barrier to the atomic bridging AC SPV, and thus the Cr-induced negative charge can be proved to be described as (CrOSi)- and/or CrO2- networks as well as (AlOSi)- or (FeOSi)- networks that were demonstrated previously.

  9. Investigation of the inhomogeneous barrier height of an Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height

    Institute of Scientific and Technical Information of China (English)

    M.G(o)k(c)en; M.Y(i)ld(i)r(i)m

    2012-01-01

    A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current voltage (I-V) characteristics in a temperature range of 300 K-400 K.Obtained I-V data are evaluated by the thermionic emission (TE) theory.Zero-bias barrier height (ΦB0) and ideality factor (n) calculated from I-V characteristics,are found to be temperature-dependent such that ΦB0 increases with temperature increasing,whereas n decreases.The obtained temperature dependence of ΦB0 and linearity in ΦB0 versus the n plot,together with a lower barrier height and Richardson constant values obtained from the Richardson plot,indicate that the barrier height of the structure is inhomogeneous in nature.Therefore,I-V characteristics are explained on the basis of Gaussian distribution of barrier height.

  10. Active conductivity of plane two-barrier resonance tunnel structure as operating element of quantum cascade laser or detector

    Directory of Open Access Journals (Sweden)

    Ju.O. Set

    2011-06-01

    Full Text Available Within the model of rectangular potentials and different effective masses of electrons in different elements of plane two-barrier resonance tunnel structure there is developed a theory of spectral parameters of quasi-stationary states and active conductivity for the case of mono-energetic electronic current interacting with electromagnetic field. It is shown that the two-barrier resonance tunnel structure can be utilized as a separate or active element of quantum cascade laser or detector. For the experimentally studied In0.53Ga0.47As/In0.52Al0.48As nano-system it is established that the two-barrier resonance tunnel structure, in detector and laser regimes, optimally operates (with the biggest conductivity at the smallest exciting current at the quantum transitions between the lowest quasi-stationary states.

  11. A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Purches, W. E. [School of Physics, UNSW, Sydney 2052 (Australia); Rossi, A.; Zhao, R. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Kafanov, S.; Duty, T. L. [School of Physics, UNSW, Sydney 2052 (Australia); Centre for Engineered Quantum Systems (EQuS), School of Physics, UNSW, Sydney 2052 (Australia); Dzurak, A. S. [School of Electrical Engineering and Telecommunications, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia); Rogge, S.; Tettamanzi, G. C., E-mail: g.tettamanzi@unsw.edu.au [School of Physics, UNSW, Sydney 2052 (Australia); Australian Centre of Excellence for Quantum Computation and Communication Technology (CQC2T), UNSW, Sydney 2052 (Australia)

    2015-08-10

    Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.

  12. 6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension

    Institute of Scientific and Technical Information of China (English)

    Tang Xiao-Yan; Zhang Yi-Men; Zhang Yu-Ming; Gao Jin-Xia

    2005-01-01

    A novel SiC Schottky barrier source/drain NMOSFET(SiC SBSD-NMOSFET) with field-induced source/drain(FISD) extension is proposed and demonstrated by numerical simulation for the first time. In the new device the FISD extension is induced by a metal field-plate lying on top of the passivation oxide, and the width of Schottky barrier is controllde by the metal field-plate. The new structure not only eliminates the effect of the significantly improves the on-state current. Moreover, the performance of the present device exhibits very weak dependence on the widths of sidewalls.

  13. A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology

  14. Study of surface recombination on cleaved and passivated edges of Si detectors

    Science.gov (United States)

    Gaubas, E.; Ceponis, T.; Vaitkus, J. V.; Fadeyev, V.; Ely, S.; Galloway, Z.; F-W Sadrozinski, H.; Christophersen, M.; Phlips, B. F.; Gorelov, I.; Hoeferkamp, M.; Metcalfe, J.; Seidel, S.

    2016-03-01

    The effectiveness of the passivation of a cleaved boundary of large area strip detectors has been studied by using Al2O3 formed by atomic layer deposition technology for p-Si structures and Si x N y grown on n-Si by plasma enhanced chemical vapour deposition. The parameters of bulk and surface recombinations have been examined in a contactless mode implemented through analysis of the microwave-probed photoconductivity transients. Rather efficient and reproducible passivation, revealed through the reduction of surface recombination velocities from ˜2 × 104 to 5 × 103 cm s-1 for n-Si and from ˜2 × 104 to 3 × 102 cm s-1 for p-Si samples, has been obtained. The existence of trapping centres together with recombination defects has been revealed at the cleaved interface within the passivating layer. It has been revealed that the impact of surface recombination is negligible when bulk radiation defects are dominant in samples irradiated with fluences >1014 neq cm-2.

  15. Design Optimization of Pixel Structure for α-Si based Uncooled Infrared Detector

    Directory of Open Access Journals (Sweden)

    Sudha Gupta

    2013-11-01

    Full Text Available In this paper authors present the design and simulation results achieved for pixel structure of amorphous Si (α-Si based bolometer array. Most uncooled IR detectors in the world are based on VOx material. But this is not a standard material in IC technology and has many inherent disadvantages. The α-Si, an alternative material with high TCR is becoming as popular. However, large TCR values, in this material are achieved only in films of high resistivity. To achieve TCR value more than 2.5%/K, α-Si film resistivity is ~ 80 ohms-cm. This gives rise to very large pixel resistance of the order of 100 Mega ohms depending upon the design of the leg structure. This high pixel resistance causes very large noise and hence lower sensitivity. If leg width or membrane thickness is increased in order to reduce the pixel resistance, then this results in higher thermal conductance which also decreases sensitivity. To overcome this problem, pixel structure is so designed that within a pixel, only part of the electrical conduction is through α-Si and rest is through metal. Simulation using Coventorware software has been done to optimize pixel resistance as well as thermal conductance through legs so that maximum sensitivity could be obtained. Optimization is also carried out in order to reduce sensitivity of pixel resistance to variation in material resistivity.

  16. Timing performance measurements of Si-PM-based LGSO phoswich detectors

    Science.gov (United States)

    Yamamoto, Seiichi; Kobayashi, Takahiro; Okumura, Satoshi; Yeom, Jung Yeol

    2016-06-01

    Since the timing resolution was significantly improved using silicon photomultipliers (Si-PMs) combined with fast scintillators, we expect that phoswich detectors will be used in future TOF-PET systems. However, no practical phoswich detector has been proposed for TOF-PET detectors. We conducted timing performance measurements of phoswich detectors comprised of two types of Ce-doped LGSO scintillators with different decay times coupled to Si-PMs and digitized the output signals using a high bandwidth digital oscilloscope. We prepared three types of LGSOs (LGSO-fast, LGSO-standard, and LGSO-slow) with different Ce concentrations. After measuring the decay time, the energy performance, and the timing performance of each LGSO, we conducted pulse shape analysis and timing resolution measurements for two versions of phoswich LGSOs: LGSO-standard/LGSO-fast and LGSO-slow/LGSO-fast combinations. The pulse shape spectra for a 10-mm-long crystal LGSO-slow/LGSO-fast combination showed good separation of the front and back crystals with a peak-to-valley ratio of 2.0. The timing resolutions for the 20-mm-long crystal LGSO-slow/LGSO-fast combination were ~300 ps FWHM. The timing resolutions for the phoswich LGSOs were slightly inferior than that measured with the individual LGSO fast, but the acquired timing resolution for the phoswich configuration, ~300 ps with a LGSO-slow/LGSO-fast combination, is adequate for TOF-PET systems. We conclude that LGSO phoswich detectors are promising for TOF-DOI-PET systems.

  17. Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy

    International Nuclear Information System (INIS)

    The Schottky barrier heights of both n and p doped Cu/Si(001), Ag/Si(001), and Au/Si(001) diodes were measured using ballistic electron emission microscopy and ballistic hole emission microscopy (BHEM), respectively. Measurements using both forward and reverse ballistic electron emission microscopy (BEEM) and (BHEM) injection conditions were performed. The Schottky barrier heights were found by fitting to a linearization of the power law form of the Bell-Kaiser BEEM model. The sum of the n-type and p-type barrier heights are in good agreement with the band gap of silicon and independent of the metal utilized. The Schottky barrier heights are found to be below the region of best fit for the power law form of the BK model, demonstrating its region of validity

  18. Signal and noise analysis of a-Si:H radiation detector-amplifier system

    International Nuclear Information System (INIS)

    Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was ∼400 MHz and the noise charge ∼1000 electrons at a 1 μsec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of ∼0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB

  19. SiPMs characterization and selection for the DUNE far detector photon detection system

    Science.gov (United States)

    Sun, Y.; Maricic, J.

    2016-01-01

    The Deep Underground Neutrino Experiment (DUNE) together with the Long Baseline Neutrino Facility (LBNF) hosted at the Fermilab will provide a unique, world-leading program for the exploration of key questions at the forefront of neutrino physics and astrophysics. CP violation in neutrino flavor mixing is one of its most important potential discoveries. Additionally, the experiment will determine the neutrino mass hierarchy and precisely measure the neutrino mixing parameters which may potentially reveal new fundamental symmetries of nature. Moreover, the DUNE is also designed for the observation of nucleon decay and supernova burst neutrinos. The photon detection (PD) system in the DUNE far detector provides trigger for cosmic backgrounds, enhances supernova burst trigger efficiency and improves the energy resolution of the detector. The DUNE adopts the technology of liquid argon time projection chamber (LArTPC) that requires the PD sensors, silicon photomultipliers (SiPM), to be carefully chosen to not only work properly in LAr temperature, but also meet certain specifications for the life of the experiment. A comprehensive testing of SiPMs in cryostat is necessary since the datasheet provided by the manufactures in the market does not cover this temperature regime. This paper gives the detailed characterization results of SenSL C-Series 60035 SiPMs, including gain, dark count rate (DCR), cross-talk and after-pulse rate. Characteristic studies on SiPMs from other vendors are also discussed in order to avoid any potential problems associated with using a single source. Moreover, the results of the ongoing mechanical durability tests are shown for the current candidate, SenSL B/C-Series 60035 SiPMs.

  20. Plasma-polymerized SiOx deposition on polymer film surfaces for preparation of oxygen gas barrier polymeric films

    International Nuclear Information System (INIS)

    SiOx films were deposited on surfaces of three polymeric films, PET, PP, and Nylon; and their oxygen gas barrier properties were evaluated. To mitigate discrepancies between the deposited SiOx and polymer film, surface modification of polymer films was done, and how the surface modification could contribute to was discussed from the viewpoint of apparent activation energy for the permeation process. The SiOx deposition on the polymer film surfaces led to a large decrease in the oxygen permeation rate. Modification of polymer film surfaces by mans of the TMOS or Si-COOH coupling treatment in prior to the SiOx deposition was effective in decreasing the oxygen permeation rate. The cavity model is proposed as an oxygen permeation process through the SiOx-deposited Nylon film. From the proposed model, controlling the interface between the deposited SiOx film and the polymer film is emphasized to be a key factor to prepare SiOx-deposited polymer films with good oxygen gas barrier properties. (author)

  1. Development of an ASIC for Si/CdTe detectors in a radioactive substance visualizing system

    International Nuclear Information System (INIS)

    We report on the recent development of a 64-channel analog front-end ASIC for a new gamma-ray imaging system designed to visualize radioactive substances. The imaging system employs a novel Compton camera which consists of silicon (Si) and cadmium telluride (CdTe) detectors. The ASIC is intended for the readout of pixel/pad detectors utilizing Si/CdTe as detector materials, and covers a dynamic range up to 1.4 MeV. The readout chip consists of 64 identical signal channels and was implemented with X-FAB 0.35μm CMOS technology. Each channel contains a charge-sensitive amplifier, a pole-zero cancellation circuit, a low-pass filter, a comparator, and a sample-hold circuit, along with a Wilkinson-type A-to-D converter. We observed an equivalent noise charge of ∼500 e− and a noise slope of ∼5 e−/pF (r.m.s.) with a power consumption of 2.1 mW per channel. The chip works well when connected to Schottky CdTe diodes, and delivers spectra with good energy resolution, such as ∼12 keV (FWHM) at 662 keV and ∼24 keV (FWHM) at 1.33 MeV

  2. Analytic fitting and simulation methods for characteristic X-ray peaks from Si-PIN detector

    International Nuclear Information System (INIS)

    A semi-empirical detector response function (DRF) model is established to fit characteristic X-ray peaks recorded in Si-PIN spectra, which is mainly composed of four components: a truncated step function, a Gaussian-shaped full-energy peak, a Gaussian-shaped Si escape peak and an exponential tail. A simple but useful statistical distribution-based analytic method (SDA) is proposed to achieve accurate values of standard deviation for characteristic X-ray peaks. And the values of the model parameters except for the standard deviation are obtained by weighted least-squares fitting of the pulse-height spectra from a number of pure-element samples. A Monte Carlo model is also established to simulate the X-ray measurement setup. The simulated flux spectrum can be transformed by Si-PIN detector response function to real pulse height spectrum as studied in this work. Finally, the fitting result for a copper alloy sample was compared with experimental spectra, and the validity of the present method was demonstrated. (authors)

  3. A study of the spectroscopic characteristics of LSO-SiPM PET detector

    International Nuclear Information System (INIS)

    The PET (Positron Emission Tomography) is a functional imaging device for diagnosis of cancer, dementia, etc. And the PET-MRI (Magnetic Resonance imaging) detector is new device for medical imaging. In the PET-MRI, detector must be insensitive to magnetic field. So the PMT (PhotoMultiplier Tube) is not acceptable detector for PET-MRI. To replace PMT, researchers study about SiPM (Silicon PhotoMultiplier). SiPM has better properties in timing resolution and spatial resolution than PMT, but energy resolution is not better than PMT. To optimize the SiPM's energy resolution, analysis of DCR (Dark Count Rate) and γ-ray spectrum was conducted. To decide SiPM's bias voltage, the I-V test was performed. And DCR was measured by single G-APD (Geiger mode Avalanche Photo Diode). And γ-ray spectrum show FWHM of peak energy. The FWHM and energy resolution is signal; the DCR is noise source of energy resolution. In experiment, scintillator was LSO. And the experiments were performed by power suppliers, pre-amp board, shaping amp, and MCA (Multi Channel Analyzer). The bias voltage range is 25.5 V to 26.3 V. That range is Geiger-mode in SiPM, tested by I-V test. The DCR increases as bias voltage increases. And energy resolution decreases as bias voltage increase. The DCR was 0.3 kHz to 400 kHz. The energy resolution is about 20% ∼ 22%. From Poisson calculation, noise from DCR is about 0.083 counts, noise from light statistics is about 5 counts. That means DCR has little effect to statistical noise. The energy resolution decreases as shaping time increases. But the slope is not rapid. The energy resolution is less affected by shaping time. That means the tested SiPM is in thermal noise region. In conclusion, to increase energy resolution, bias voltage increases and shaping time decreases. But bias voltage has biggest effect to energy resolution

  4. Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

    International Nuclear Information System (INIS)

    This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH4 in helium. Rates of up to ten times (5.5 micrometer/h) that of the standard technique are obtained, allowing for the feasible fabrication of detectors having thickness up to 100 micrometers. The electrical characteristics (depletion voltage, residual space charge density) of the helium diluted material, have been investigated and compared to that of the standard material. The response of detectors, made from both materials, to 5.5 MeV alpha particles are compared. 6 figs., 5 tabs., 13 refs

  5. A Study of Trimethylsilane (3MS and Tetramethylsilane (4MS Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

    Directory of Open Access Journals (Sweden)

    Sheng-Wen Chen

    2012-03-01

    Full Text Available Amorphous nitrogen-doped silicon carbide (α-SiCN:H films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI manufacturing technology. In this study, the etching stop layers were deposited by using trimethylsilane (3MS or tetramethylsilane (4MS with ammonia by plasma-enhanced chemical vapor deposition (PECVD followed by a procedure for tetra-ethoxyl silane (TEOS oxide. The depth profile of Cu distribution examined by second ion mass spectroscopy (SIMs showed that 3MS α-SiCN:H exhibited a better barrier performance than the 4MS film, which was revealed by the Cu signal. The FTIR spectra also showed the intensity of Si-CH3 stretch mode in the α-SiCN:H film deposited by 3MS was higher than that deposited by 4MS. A novel multi structure of oxygen-doped silicon carbide (SiC:O substituted TEOS oxide capped on 4MS α-SiC:N film was also examined. In addition to this, the new multi etch stop layers can be deposited together with the same tool which can thus eliminate the effect of the vacuum break and accompanying environmental contamination.

  6. Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode

    Science.gov (United States)

    Chen, Feng-Ping; Zhang, Yu-Ming; Zhang, Yi-Men; Tang, Xiao-Yan; Wang, Yue-Hu; Chen, Wen-Hao

    2011-11-01

    The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μ P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200 °C and a stable operation under a continuous forward current of 100 A/cm2.

  7. Volumetric CT with sparse detector arrays (and application to Si-strip photon counters)

    Science.gov (United States)

    Sisniega, A.; Zbijewski, W.; Stayman, J. W.; Xu, J.; Taguchi, K.; Fredenberg, E.; Lundqvist, Mats; Siewerdsen, J. H.

    2016-01-01

    Novel x-ray medical imaging sensors, such as photon counting detectors (PCDs) and large area CCD and CMOS cameras can involve irregular and/or sparse sampling of the detector plane. Application of such detectors to CT involves undersampling that is markedly different from the commonly considered case of sparse angular sampling. This work investigates volumetric sampling in CT systems incorporating sparsely sampled detectors with axial and helical scan orbits and evaluates performance of model-based image reconstruction (MBIR) with spatially varying regularization in mitigating artifacts due to sparse detector sampling. Volumetric metrics of sampling density and uniformity were introduced. Penalized-likelihood MBIR with a spatially varying penalty that homogenized resolution by accounting for variations in local sampling density (i.e. detector gaps) was evaluated. The proposed methodology was tested in simulations and on an imaging bench based on a Si-strip PCD (total area 5 cm  ×  25 cm) consisting of an arrangement of line sensors separated by gaps of up to 2.5 mm. The bench was equipped with translation/rotation stages allowing a variety of scanning trajectories, ranging from a simple axial acquisition to helical scans with variable pitch. Statistical (spherical clutter) and anthropomorphic (hand) phantoms were considered. Image quality was compared to that obtained with a conventional uniform penalty in terms of structural similarity index (SSIM), image uniformity, spatial resolution, contrast, and noise. Scan trajectories with intermediate helical width (~10 mm longitudinal distance per 360° rotation) demonstrated optimal tradeoff between the average sampling density and the homogeneity of sampling throughout the volume. For a scan trajectory with 10.8 mm helical width, the spatially varying penalty resulted in significant visual reduction of sampling artifacts, confirmed by a 10% reduction in minimum SSIM (from 0.88 to 0.8) and a 40

  8. Characterization of Si hybrid CMOS detectors for use in the soft X-ray band

    International Nuclear Information System (INIS)

    We report on the characterization of four Teledyne Imaging Systems HAWAII Hybrid Si CMOS detectors designed for X-ray detection. Three H1RG detectors were studied along with a specially configured H2RG. Read noise measurements were performed, with the lowest result being 7.1 e− RMS. Interpixel capacitive crosstalk (IPC) was measured for the three H1RGs and for the H2RG. The H1RGs had IPC upper limits of 4.0–5.5% (up and down pixels) and 8.7–9.7% (left and right pixels), indicating a clear asymmetry. Energy resolution is reported for two X-ray lines, 1.5 and 5.9 keV, at multiple temperatures between 150 and 210 K. The best resolution measured at 5.9 keV was 250 eV (4.2%) at 150 K, with IPC contributing significantly to this measured energy distribution. The H2RG, with a unique configuration designed to decrease the capacitive coupling between ROIC pixels, had an IPC of 1.8±1.0% indicating a dramatic improvement in IPC with no measurable asymmetry. We also measured dark current as a function of temperature for each detector. For the detector with the lowest dark current, at 150 K, we measured a dark current of 0.020±0.001 (e− s−1 pixel−1). There is also a consistent break in the fit to the dark current data for each detector. Above 180 K, all the data can be fit by the product of a power law in temperature and an exponential. Below 180 K the dark current decreases more slowly; a shallow power law or constant must be added to each fit, indicating a different form of dark current is dominant in this temperature regime. Dark current figures of merit at 293 K are estimated from the fit for each detector

  9. X-ray irradiation effects on Ni/n-Si MIS Schottky barriers ≅ a qualitative assessment

    International Nuclear Information System (INIS)

    Measurements have been made of the electrical characteristics of Ni/n-Si MIS (metal-thin interfacial layer-semiconductor) Schottky barriers before and after X-ray irradiation. After X-ray irradiation acceptor-like states have been found to generate somewhere in the energy range 0.33 eV above the top of the valence band edge at the Si-thin SiO2(≅ 20 A) interface. A possible mechanism for the generation of these interface states has been proposed on the basis of physico-chemical models. (author). 22 refs., 3 figs., 1 tab

  10. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    Science.gov (United States)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  11. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    Science.gov (United States)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-06-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor/acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  12. A PET detector prototype based on digital SiPMs and GAGG scintillators

    Science.gov (United States)

    Schneider, Florian R.; Shimazoe, Kenji; Somlai-Schweiger, Ian; Ziegler, Sibylle I.

    2015-02-01

    Silicon Photomultipliers (SiPM) are interesting light sensors for Positron Emission Tomography (PET). The detector signal of analog SiPMs is the total charge of all fired cells. Energy and time information have to be determined with dedicated readout electronics. Philips Digital Photon Counting has developed a SiPM with added electronics on cell level delivering a digital value of the time stamp and number of fired cells. These so called Digital Photon Counters (DPC) are fully digital devices. In this study, the feasibility of using DPCs in combination with LYSO (Lutetium Yttrium Oxyorthosilicate) and GAGG (Gadolinium Aluminum Gallium Garnet) scintillators for PET is tested. Each DPC module has 64 channels with 3.2 × 3.8775 mm2, comprising 3200 cells each. GAGG is a recently developed scintillator (Zeff = 54, 6.63 g cm-3, 520 nm peak emission, 46 000 photons MeV-1, 88 ns (92%) and 230 ns (8%) decay times, non-hygroscopic, chemically and mechanically stable). Individual crystals of 2 × 2 × 6 mm3 were coupled onto each DPC pixel. LYSO coupled to the DPC results in a coincidence time resolution (CTR) of 171 ps FWHM and an energy resolution of 12.6% FWHM at 511 keV. Using GAGG, coincidence timing is 310 ps FWHM and energy resolution is 8.5% FWHM. A PET detector prototype with 2 DPCs equipped with a GAGG array matching the pixel size (3.2 × 3.8775 × 8 mm3) was assembled. To emulate a ring of 10 modules, objects are rotated in the field of view. CTR of the PET is 619 ps and energy resolution is 9.2% FWHM. The iterative MLEM reconstruction is based on system matrices calculated with an analytical detector response function model. A phantom with rods of different diameters filled with 18F was used for tomographic tests.

  13. Infrared response measurements on radiation-damaged Si/Li/ detectors.

    Science.gov (United States)

    Sher, A. H.; Liu, Y. M.; Keery, W. J.

    1972-01-01

    The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.

  14. SiPMs characterization and selection for the DUNE far detector photon detection system

    CERN Document Server

    Sun, Yujing

    2015-01-01

    The Deep Underground Neutrino Experiment (DUNE) together with the Long Baseline Neutrino Facility (LBNF) hosted at the Fermilab will provide a unique, world-leading program for the exploration of key questions at the forefront of neutrino physics and astrophysics. CP violation in neutrino flavor mixing is one of its most important potential discoveries. Additionally, the experiment will determine the neutrino mass hierarchy and precisely measure the neutrino mixing parameters which may potentially reveal new fundamental symmetries of nature. Moreover, the DUNE is also designed for the observation of nucleon decay and supernova burst neutrinos. The photon detection (PD) system in the DUNE far detector provides trigger for cosmic backgrounds, enhances supernova burst trigger efficiency and improves the energy resolution of the detector. The DUNE adopts the technology of liquid argon time projection chamber (LArTPC) that requires the PD sensors, silicon photomultipliers (SiPM), to be carefully chosen to not only...

  15. CMOS front end analog signal readout chip for Si-strip/PIN detectors

    International Nuclear Information System (INIS)

    The paper presents the design of an 8-channel front-end chip for Si-strip detectors, ranging in capacitance from 1 to 30 pf. Each channel consists of a charge amplifier, a shaper amplifier (CR-RC3) and a track-hold stage. The channel outputs are connected to an analog multiplexer which is controlled by an external clock for serial readout. The peaking time is adjustable over 250ns-2us in four fixed steps by external control. There is provision for changing gain low/high. A derivative of the chip is also developed for dosimeter application that uses small area diodes as detectors. The circuit has a power dissipation of 6 MW per channel and is designed to fabricate in 1.2um CMOS technology. The Opf noise is ∼400e. The design approach is presented and the results of simulation are shown. (author)

  16. Gas avalanche pixel detectors with amorphous silicon carbide (a-Si:C:H) overcoating

    International Nuclear Information System (INIS)

    Performance of the gas avalanche pixel detectors of square and circular geometry, with and without semiconducting surface coating, was characterized in terms of gas gain and active region. Although the electric field profile of the square geometry cannot be radially uniform, a 200 microm pitch detector of this type exhibited a maximum gain of ∼ 12,000 which is comparable to that of the circular counterpart. Due to the existence of the anode bus lines passing under the cathodes, there is a defocusing effect of the drift field lines converging to the anodes, resulting in inactive regions where electrons produced from gas ionization are not collected at the anodes. Variation of the count rate with the drift field was measured to probe these defocusing effects. The p-type a-Si:C:H surface coating was effective in reducing these inactive regions

  17. Development of a SiPM-based PET detector using a digital positioning algorithm

    Science.gov (United States)

    Lee, Jin Hyung; Lee, Seung-Jae; An, Su Jung; Kim, Hyun-Il; Chung, Yong Hyun

    2016-05-01

    A decreased number of readout method is investigated here to provide precise pixel information for small-animal positron emission tomography (PET). Small-animal PET consists of eight modules, each being composed of a 3 × 3 array of 2 mm × 2 mm × 20 mm lutetium yttrium orthosilicate (LYSO) crystals optically coupled to a 2 × 2 array of 3 mm × 3 mm silicon photomultipliers (SiPMs). The number of readout channels is reduced by one-quarter that of the conventional method by applying a simplified pixel-determination algorithm. The performances of the PET system and detector module were evaluated with experimental verifications. In the results, all pixels of the 3 × 3 LYSO array were decoded well, and the performances of the PET detector module were measured.

  18. Radiation stability of SiC-ion detectors to exposure by relativistic protons

    CERN Document Server

    Ivanov, A M; Davydov, D V; Savkina, N S; Lebedev, A A; Mironov, Y T; Ryabov, G A; Ivanov, E M

    2001-01-01

    Schottky diodes based on 6H-SiC epitaxial films are used. The structures are exposed to dose 3 x 10 sup 1 sup 4 cm sup - sup 2 of 1000 MeV protons. The effect of high energy protons is studied by means of precise alpha-spectrometry. Parameters of deep levels induced by protons are measured using the deep-level transient spectroscopy. The number of vacancies arising in the track of 1000 and 8 MeV proton is determined by TRIM program. Thickness of space charge region and the diffusion length for holes is determined before and after irradiation by fitting the experimental result of alpha-spectrometry and capacitance measurements. The results show insignificant changes of charges transport properties in SiC detectors

  19. Radiation stability of SiC-ion detectors to exposure by relativistic protons

    International Nuclear Information System (INIS)

    Schottky diodes based on 6H-SiC epitaxial films are used. The structures are exposed to dose 3 x 1014 cm-2 of 1000 MeV protons. The effect of high energy protons is studied by means of precise α-spectrometry. Parameters of deep levels induced by protons are measured using the deep-level transient spectroscopy. The number of vacancies arising in the track of 1000 and 8 MeV proton is determined by TRIM program. Thickness of space charge region and the diffusion length for holes is determined before and after irradiation by fitting the experimental result of α-spectrometry and capacitance measurements. The results show insignificant changes of charges transport properties in SiC detectors

  20. High resolution detectors based on continuous crystals and SiPMs for small animal PET

    Energy Technology Data Exchange (ETDEWEB)

    Cabello, J. [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); Barrillon, P. [Laboratoire de L' Accélérateur Linéaire (LAL), Orsay (France); Barrio, J. [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); Bisogni, M.G.; Del Guerra, A. [Dipartimento di Fisica “E. Fermi“, Università di Pisa and INFN Pisa, Pisa (Italy); Lacasta, C. [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); Rafecas, M. [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); Departamento de Física Atómica, Nuclear y Molecular, Universitat de València, Valencia (Spain); Saikouk, H. [Laboratoire de Physique Nucléaire, Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Solaz, C.; Solevi, P. [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); La Taille, C. de [Laboratoire de L' Accélérateur Linéaire (LAL), Orsay (France); Llosá, G., E-mail: gabriela.llosa@ific.uv.es [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain)

    2013-08-01

    Sensitivity and spatial resolution are the two main factors to maximize in emission imaging. The improvement of one factor deteriorates the other with pixelated crystals. In this work we combine SiPM matrices with monolithic crystals, using an accurate γ-ray interaction position determination algorithm that provides depth of interaction. Continuous crystals provide higher sensitivity than pixelated crystals, while an accurate interaction position determination does not degrade the spatial resolution. Monte Carlo simulations and experimental data show good agreement both demonstrating sub-millimetre intrinsic spatial resolution. A system consisting in two rotating detectors in coincidence is currently under operation already producing tomographic images.

  1. To properties of a spectometer of energy deposited in Si-detectors

    Czech Academy of Sciences Publication Activity Database

    Ploc, Ondřej; Spurný, František

    Praha : ČVUT v Praze, 2007, s. 162-165. ISBN 978-80-01-03901-4. [Dny radiační ochrany /29./. Kouty nad Desnou, Hrubý Jeseník (CZ), 05.11.2007-09.11.2007] R&D Projects: GA ČR(CZ) GD202/05/H031; GA MŠk 1P05OC032 Institutional research plan: CEZ:AV0Z10480505 Keywords : spectrometer * Si-detector * radiation Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders

  2. Dynamic range extension of SiPM detectors with the time-gated operation.

    Science.gov (United States)

    Vilella, Eva; Diéguez, Angel

    2014-05-19

    The silicon photomultiplier (SiPM) is a novel detector technology that has undergone a fast development in the last few years, owing to its single-photon resolution and ultra-fast response time. However, the typical high dark count rates of the sensor may prevent the detection of low intensity radiation fluxes. In this article, the time-gated operation with short active periods in the nanosecond range is proposed as a solution to reduce the number of cells fired due to noise and thus increase the dynamic range. The technique is aimed at application fields that function under a trigger command, such as gated fluorescence lifetime imaging microscopy. PMID:24921320

  3. Accurate modeling of SiPM detectors coupled to FE electronics for timing performance analysis

    Energy Technology Data Exchange (ETDEWEB)

    Ciciriello, F.; Corsi, F.; Licciulli, F.; Marzocca, C. [DEE-Politecnico di Bari, Via Orabona 4, I-70125 Bari (Italy); Matarrese, G., E-mail: matarrese@deemail.poliba.it [DEE-Politecnico di Bari, Via Orabona 4, I-70125 Bari (Italy); Del Guerra, A.; Bisogni, M.G. [Department of Physics, University of Pisa, Largo Bruno Pontecorvo 3, I-56127 Pisa (Italy)

    2013-08-01

    It has already been shown how the shape of the current pulse produced by a SiPM in response to an incident photon is sensibly affected by the characteristics of the front-end electronics (FEE) used to read out the detector. When the application requires to approach the best theoretical time performance of the detection system, the influence of all the parasitics associated to the coupling SiPM–FEE can play a relevant role and must be adequately modeled. In particular, it has been reported that the shape of the current pulse is affected by the parasitic inductance of the wiring connection between SiPM and FEE. In this contribution, we extend the validity of a previously presented SiPM model to account for the wiring inductance. Various combinations of the main performance parameters of the FEE (input resistance and bandwidth) have been simulated in order to evaluate their influence on the time accuracy of the detection system, when the time pick-off of each single event is extracted by means of a leading edge discriminator (LED) technique.

  4. Proton radiation effect on performance of InAs/GaSb complementary barrier infrared detector

    International Nuclear Information System (INIS)

    In this work, we investigated the effect of proton irradiation on the performance of long wavelength infrared InAs/GaSb photodiodes (λc = 10.2 μm), based on the complementary barrier infrared detector design. We found that irradiation with 68 MeV protons causes a significant increase of the dark current from jd = 5 × 10−5 A/cm2 to jd = 6 × 10−3 A/cm2, at Vb = 0.1 V, T = 80 K and fluence 19.2 × 1011 H+/cm2. Analysis of the dark current as a function of temperature and bias showed that the dominant contributor to the dark current in these devices changes from diffusion current to tunneling current after proton irradiation. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by trap-assisted tunneling processes in proton displacement damage areas located near the device sidewalls

  5. Proton radiation effect on performance of InAs/GaSb complementary barrier infrared detector

    Energy Technology Data Exchange (ETDEWEB)

    Soibel, Alexander; Rafol, Sir B.; Khoshakhlagh, Arezou; Nguyen, Jean; Hoglund, Linda; Fisher, Anita M.; Keo, Sam. A.; Ting, David Z.-Y.; Gunapala, Sarath D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, California 91030 (United States)

    2015-12-28

    In this work, we investigated the effect of proton irradiation on the performance of long wavelength infrared InAs/GaSb photodiodes (λ{sub c} = 10.2 μm), based on the complementary barrier infrared detector design. We found that irradiation with 68 MeV protons causes a significant increase of the dark current from j{sub d} = 5 × 10{sup −5} A/cm{sup 2} to j{sub d} = 6 × 10{sup −3} A/cm{sup 2}, at V{sub b} = 0.1 V, T = 80 K and fluence 19.2 × 10{sup 11 }H{sup +}/cm{sup 2}. Analysis of the dark current as a function of temperature and bias showed that the dominant contributor to the dark current in these devices changes from diffusion current to tunneling current after proton irradiation. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by trap-assisted tunneling processes in proton displacement damage areas located near the device sidewalls.

  6. Creep, Fatigue and Fracture Behavior of Environmental Barrier Coating and SiC-SiC Ceramic Matrix Composite Systems: The Role of Environment Effects

    Science.gov (United States)

    Zhu, Dongming; Ghosn, Louis J.

    2015-01-01

    Advanced environmental barrier coating (EBC) systems for low emission SiCSiC CMC combustors and turbine airfoils have been developed to meet next generation engine emission and performance goals. This presentation will highlight the developments of NASAs current EBC system technologies for SiC-SiC ceramic matrix composite combustors and turbine airfoils, their performance evaluation and modeling progress towards improving the engine SiCSiC component temperature capability and long-term durability. Our emphasis has also been placed on the fundamental aspects of the EBC-CMC creep and fatigue behaviors, and their interactions with turbine engine oxidizing and moisture environments. The EBC-CMC environmental degradation and failure modes, under various simulated engine testing environments, in particular involving high heat flux, high pressure, high velocity combustion conditions, will be discussed aiming at quantifying the protective coating functions, performance and durability, and in conjunction with damage mechanics and fracture mechanics approaches.

  7. Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

    International Nuclear Information System (INIS)

    The band alignment between copper interconnects and their low-k interlayer dielectrics is critical to understanding the fundamental mechanisms involved in electrical leakage in low-k/Cu interconnects. In this work, vacuum-ultraviolet (VUV) photoemission spectroscopy is utilized to determine the potential of the Schottky barrier present at low-k a-SiOC:H/Cu interfaces. By examining the photoemission spectra before and after VUV exposure of a low-k a-SiOC:H (k = 3.3) thin film fabricated by plasma-enhanced chemical-vapor deposition on a polished Cu substrate, it was found that photons with energies of 4.9 eV or greater can deplete accumulated charge in a-SiOC:H films, while VUV photons with energies of 4.7 eV or less, did not have this effect. These critical values were identified to relate the electric potential of the interface barrier between the a-SiOC:H and the Cu layers. Using this method, the Schottky barrier at the low-k a-SiOC:H (k = 3.3)/Cu interface was determined to be 4.8 ± 0.1 eV

  8. Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Guo, X.; Pei, D.; Zheng, H.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Lin, Y.-H.; Fung, H.-S.; Chen, C.-C. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Nishi, Y. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-12-07

    The band alignment between copper interconnects and their low-k interlayer dielectrics is critical to understanding the fundamental mechanisms involved in electrical leakage in low-k/Cu interconnects. In this work, vacuum-ultraviolet (VUV) photoemission spectroscopy is utilized to determine the potential of the Schottky barrier present at low-k a-SiOC:H/Cu interfaces. By examining the photoemission spectra before and after VUV exposure of a low-k a-SiOC:H (k = 3.3) thin film fabricated by plasma-enhanced chemical-vapor deposition on a polished Cu substrate, it was found that photons with energies of 4.9 eV or greater can deplete accumulated charge in a-SiOC:H films, while VUV photons with energies of 4.7 eV or less, did not have this effect. These critical values were identified to relate the electric potential of the interface barrier between the a-SiOC:H and the Cu layers. Using this method, the Schottky barrier at the low-k a-SiOC:H (k = 3.3)/Cu interface was determined to be 4.8 ± 0.1 eV.

  9. 1024 × 1024 Si:As IBC detector arrays for JWST MIRI

    Science.gov (United States)

    Love, Peter J.; Hoffman, Alan W.; Lum, Nancy A.; Ando, Ken J.; Rosbeck, Joe; Ritchie, William D.; Therrien, Neil J.; Holcombe, Roger S.; Corrales, Elizabeth

    2005-08-01

    1K × 1K Si:As Impurity Band Conduction (IBC) arrays have been developed by RVS for the James Webb Space Telescope (JWST) Mid-Infrared Instrument (MIRI). MIRI provides imaging, coronagraphy, and low and medium resolution spectroscopy over the 5 - 28 μm band. The IBC devices are also suitable for other low-background applications. The Si:As IBC detectors have a pixel dimension of 25 μm and respond to infrared radiation between 5 and 28 μm, covering an important Mid-IR region beyond the 1 - 5 μm range covered by the JWST NIRCam and NIRSpec instruments. Due to high terrestrial backgrounds at the longer Mid-IR wavelengths, it is very difficult to conduct ground-based observations at these wavelengths. Hence, the MIRI instrument on JWST can provide science not obtainable from the ground. We describe results of the development of a new 1024 × 1024 Si:As IBC array that responds with high quantum efficiency over the wavelength range 5 to 28 μm. The previous generation's largest, most sensitive infrared (IR) detectors at these wavelengths were the 256 × 256 / 30 μm pitch Si:As IBC devices built by Raytheon for the SIRTF/IRAC instrument1. Detector performance results will be discussed, including relative spectral response, Responsive Quantum Efficiency (RQE) vs. detector bias, and dark current versus temperature. In addition, Sensor Chip Assembly (SCA) data will be presented from the first Engineering SCAs. The detector ROIC utilizes a PMOS Source Follower per Detector (SFD) input circuit with a well capacity of about 2 × 105 electrons. The read noise of the "bare" MUX is less than 12 e- rms with Fowler-8 sampling at an operating temperature of 7 K. A companion paper by Craig McMurtry (University of Rochester) will discuss the details of SB305 MUX noise measurements2. Other features of the IBC array include 4 video outputs and a separate reference output with a frame rate of 0.36 Hz (2.75 sec frame time). Power dissipation is about 0.5 mW at a 0.36 Hz frame rate

  10. Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures

    International Nuclear Information System (INIS)

    GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates which were characterized by powder X-ray diffraction, field emission scanning electron microscopy, and photoluminescence. The current–voltage characteristics of the GaN nanorods on Si (111) heterojunction were obtained from 138 to 493 K which showed the inverted rectification behavior. The I-V characteristics were analyzed in terms of thermionic emission model. The temperature variation of the apparent barrier height and ideality factor along with the non-linearity of the activation energy plot indicated the presence of lateral inhomogeneities in the barrier height. The observed two temperature regimes in Richardson's plot could be well explained by assuming two separate Gaussian distribution of the barrier heights

  11. Performance and emission characteristics of the thermal barrier coated SI engine by adding argon inert gas to intake mixture.

    Science.gov (United States)

    Karthikeya Sharma, T

    2015-11-01

    Dilution of the intake air of the SI engine with the inert gases is one of the emission control techniques like exhaust gas recirculation, water injection into combustion chamber and cyclic variability, without scarifying power output and/or thermal efficiency (TE). This paper investigates the effects of using argon (Ar) gas to mitigate the spark ignition engine intake air to enhance the performance and cut down the emissions mainly nitrogen oxides. The input variables of this study include the compression ratio, stroke length, and engine speed and argon concentration. Output parameters like TE, volumetric efficiency, heat release rates, brake power, exhaust gas temperature and emissions of NOx, CO2 and CO were studied in a thermal barrier coated SI engine, under variable argon concentrations. Results of this study showed that the inclusion of Argon to the input air of the thermal barrier coated SI engine has significantly improved the emission characteristics and engine's performance within the range studied. PMID:26644918

  12. Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier

    Institute of Scientific and Technical Information of China (English)

    Song Qing-Wen; Zhang Yu-Ming; Zhang Yi-Men; Chen Feng-Ping; Tang xiao-Yan

    2011-01-01

    The current transport parameters of 4H-SiC merged PiN Schottky (MPS) diode are investigated in a temperature range of 300-520 K. Evaluation of the experimental current-voltage (Ⅰ-Ⅴ) data reveals the decrease in Schottky barrier height φb but an increase in ideality factor n, with temperature decreasing, which suggests the presence of an inhomogeneous Schottky barrier. The current transport behaviours are analysed in detail using the Tung's model and the effective area of the low barrier patches is extracted. It is found that small low barrier patches, making only 4.3% of the total contact, may significantly influence the device electrical characteristics due to the fact that a barrier height of 0.968 eV is much lower than the average barrier height 1.39 eV. This shows that ion implantation in the Schottky contact region of MPS structure may result in a poor Ti/4H-SiC interface quality. In addition, the temperature dependence of the specific on-resistance (Ron-sp), T2.14, is determined between 300 K and 520 K, which is similar to that predicted by a reduction in electron mobility.

  13. Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements

    Institute of Scientific and Technical Information of China (English)

    G.Gfüler; (O).Güllü; (S).Karata(s); (O).F.Bakkalo(g)lu

    2009-01-01

    Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current-voltage (I- V) and capacitancevoltage (C-V) techniques at room temperature.The electronic parameters such as ideality factor,barrier height and average series resistance are determined.The barrier height 0.76 eV obtained from the C-V measurements is higher than that of the value 0.70 eV obtained from the I-V measurements.The series resistance Rs and the ideality factor n are determined from the d ln( I ) / dV plot and are found to be 193.62Ω and 1.34,respectively.The barrier height and the Rs value are calculated from the H(I) - I plot and are found to be 0.71 eV and 205.95Ω.Furthermore,the energy distribution of the interface state density is determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height.The interface state density Nss ranges from 6.484×1011 cm-2eV-1 in (Ec-0.446) eV to 2.801×1010 cm-2eV-1 in (Ec-0.631) eV,of the Co/n-Si Schottky barrier diode.The results show the presence of a thin interracial layer between the metal and the semiconductor.

  14. Initial testing of a Si:As blocked-impurity-band (BIB) trap detector

    Science.gov (United States)

    Woods, Solomon I.; Kaplan, Simon G.; Jung, Timothy M.; Carter, Adriaan C.; Proctor, James E.

    2012-06-01

    We discuss the design, construction, and initial test results of a Si:As blocked-impurity-band (BIB) trap detector. The trap consists of two rectangular BIB devices configured in a v-shaped geometry. This trapping geometry is designed to ideally yield a minimum of 7 bounces before exit for incident light within an f/4 cone with 3 mm clear aperture. The individual BIB devices consist of 70 μm thick active layers with As doping near 1.7×1018 cm-3, and have dark currents of approximately 100 nA at an operating temperature of 9 K. A simple ray-tracing model of the trap, along with data on the quantum yield of typical BIB detector elements, indicates that it is possible to achieve an external quantum efficiency of > 0.99 over the 4 μm to 28 μm spectral range and significant suppression of the etalon fringes present in the spectral responsivity of a single element. We have made initial responsivity measurements of the trap compared to a calibrated 5 mm diameter pyroelectric detector over the 3 μm to 17 μm spectral range using the fiber-coupled output of a Fourier-transform spectrometer. We also discuss the results of comparison measurements between the trap detector and an absolute cryogenic radiometer viewing the output of a calibrated blackbody source at discrete filter bands from 5 μm to 11 μ. In initial testing the performance of the trap is limited by the poor performance of the individual BIB detectors, but the advantages of boosted quantum efficiency and suppressed etalon are realized by the trap.

  15. A detector head design for small-animal PET with silicon photomultipliers (SiPM).

    Science.gov (United States)

    Moehrs, Sascha; Del Guerra, Alberto; Herbert, Deborah J; Mandelkern, Mark A

    2006-03-01

    Small-animal PET systems are now striving for sub-millimetre resolution. Current systems based upon PSPMTs and finely pixellated scintillators can be pushed to higher resolution, but at the expense of other performance parameters and a rapidly escalating cost. Moreover, depth of interaction (DOI) information is usually difficult to assess in such systems, even though this information is highly desirable to reduce the parallax error, which is often the dominant error for such high-resolution systems. In this study we propose a high-resolution detector head for a small-animal PET imaging system with intrinsic DOI information. Instead of a pixellated scintillator, our design is based upon the classic Anger camera principle, i.e. the head is constructed of modular layers each consisting of a continuous slab of scintillator, viewed by a new type of compact silicon photodetector. The photodetector is the recently developed silicon photomultiplier (SiPM) that as well as being very compact has many other attractive properties: high gain at low bias voltage, excellent single-photoelectron resolution and fast timing. A detector head of about 4 x 4 cm2 in area is proposed, constructed from three modular layers of the type described above. We perform a simulation study, using the Monte Carlo simulation package Geant4. The simulation results are used to optimize the geometry of the detector head and characterize its performance. Additionally, hit estimation algorithms are studied to determine the interaction position of annihilation photons correctly over the whole detector surface. The resulting detector has a nearly uniform efficiency for 511 keV photons of approximately 70% and an intrinsic spatial resolution of less than approximately 0.4 mm full width at half maximum (fwhm). PMID:16481681

  16. Research Progress in Silicon Carbide Neutron Detector%SiC中子探测器的研究进展

    Institute of Scientific and Technical Information of China (English)

    胡青青; 杨俊; 刘国福; 罗晓亮

    2012-01-01

    相比于气体、闪烁体及常规半导体中子探测器,基于第三代半导体材料SiC的中子探测器具有体积小、响应快、位置分辨率好、抗高温和耐辐照等众多优点.其中抗高温和耐辐照是应用于核反应堆堆芯、高能物理试验和太空等高温高压以及强辐射环境下的中子探测器需要突破的瓶颈.论文总结和分析了SiC的材料特性,SiC中子探测器的结构、工作原理、国内外发展现状以及存在的问题,并对我国中子探测器的发展趋势进行了探讨.%The detectors which are based on the third era semiconductor material SiC offer several important advantages over gas, scintillator and conventional semiconductor neutron detectors, such as compact size, faster charge - collection times, better location and spatial resolution, temperature and radiation hardness et al. A detector capable of operating at elevated temperatures and in high radiation fields including nuclear reactors, high - energy physical experiment and outer space, is the chokepoint that neutron detector need to break through. This article introduces the properties of the epitaxial silicon carbide material, SiC neutron detector configuration , work principle, also summarizes and analyses recent researches and problems need to solve of SiC neutron detector at home and abroad. At last,discusses the developing direction of radiation detectors in the interior.

  17. Characterization of 600-μm-thick SI-GaAs detectors for medical imaging

    International Nuclear Information System (INIS)

    We present results of an experimental study concerning different semi-insulating GaAs (SI-GaAs) detectors of thickness 600 μm, aimed at testing their performance in terms of leakage current, breakdown voltage, charge collection efficiency (CCE) and energy resolution (ΔE/E), in view of their possible application to digital imaging in radiology and nuclear medicine. We have investigated the detection performance of detectors with different sizes of the Schottky contact pad (0.2-1.0 mm), using different gamma radioactive sources (241Am, 131Ba and 152Eu with peak energy 60, 81 and 122 keV, respectively) and a laser source (λ=813 nm, pulse width=43 ps, pulse energy 4 pJ). CCE values up to 80% and minimum ΔE/E of 6% at 60 keV were observed. For SI-GaAs Schottky diodes, evidence of the dependence of electrical and spectroscopic performance on the side of the pixel ('small pixel effect') is presented

  18. High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

    International Nuclear Information System (INIS)

    We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

  19. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    CERN Document Server

    Beeman, J W; Giuliani, A; Mancuso, M; Pessina, G; Plantevin, O; Rusconi, C

    2012-01-01

    In germanium-based light detectors for scintillating bolometers, a SiO$_2$ anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25-35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at $\\sim 630$ nm wavelength) that will characterise future neutrinoless double beta decay experiments on the isotope $^{82}$Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO$_2$ coating and describes a method and a set-up that can be extended to the study of other types of coatings ...

  20. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    Science.gov (United States)

    Beeman, J. W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.

    2013-05-01

    In germanium-based light detectors for scintillating bolometers, a SiO2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25-35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ˜630 nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

  1. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    International Nuclear Information System (INIS)

    In germanium-based light detectors for scintillating bolometers, a SiO2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25–35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ∼630nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials

  2. Charge transport in a-Si:H detectors: Comparison of analytical and Monte Carlo simulations

    International Nuclear Information System (INIS)

    To understand the signal formation in hydrogenated amorphous silicon (a-Si:H) p-i-n detectors, dispersive charge transport due to multiple trapping in a-Si:H tail states is studied both analytically and by Monte Carlo simulations. An analytical solution is found for the free electron and hole distributions n(x,t) and the transient current I(t) due to an initial electron-hole pair generated at an arbitrary depth in the detector for the case of exponential band tails and linear field profiles; integrating over all e-h pairs produced along the particle's trajectory yields the actual distributions and current; the induced charge Q(t) is obtained by numerically integrating the current. This generalizes previous models used to analyze time-of-flight experiments. The Monte Carlo simulation provides the same information but can be applied to arbitrary field profiles, field dependent mobilities and localized state distributions. A comparison of both calculations is made in a simple case to show that identical results are obtained over a large time domain. A comparison with measured signals confirms that the total induced charge depends on the applied bias voltage. The applicability of the same approach to other semiconductors is discussed

  3. Influence of dopants on the glow curve structure and energy dependence of LiF:Mg,Cu,Si detectors

    Energy Technology Data Exchange (ETDEWEB)

    Knezevic, Z., E-mail: zknez@irb.h [Ruder Boskovic Institute, Bijenicka 54, 10000 Zagreb (Croatia); Ranogajec-Komor, M.; Miljanic, S. [Ruder Boskovic Institute, Bijenicka 54, 10000 Zagreb (Croatia); Lee, J.I.; Kim, J.L. [Korea Atomic Energy Research Institute, P.O. Box 105 Yuseong, Daejon 305-600 (Korea, Republic of); Music, S. [Ruder Boskovic Institute, Bijenicka 54, 10000 Zagreb (Croatia)

    2011-03-15

    LiF thermoluminescent material doped with Mg, Cu and Si recently developed by the Korea Atomic Energy Research Institute (KAERI) has shown very good dosimetric properties. Since the thermoluminescence in LiF was found to be dependent on the proper combination of dopants, the investigation of the concentration and type of dopants is very important in developing and characterisation of new TL materials. The aim of this work was to determine the influence of type and concentration of activators on the glow curve structure, sensitivity, reproducibility and on the photon energy response of LiF:Mg,Cu,Si detectors. The energy response was studied in air and on the ISO water phantom in the range of mean photon energies between 33 keV and 164 keV. The morphology and local chemical composition of LiF:Mg,Cu,Si detectors were examined using high resolution scanning electron microscopy (FE-SEM). The results show that type and concentration of activators influence the glow curve and sensitivity. Different dopant concentrations did not show influence on the photon energy response. The sensitivity of LiF:Mg,Cu,Si detector with dopant concentration of Mg = 0.35 mol%, Cu = 0.025 mol% and Si = 0.9 mol% was very high (up to 65 times higher than that of TLD-100). The photon energy response of LiF:Mg,Cu,Si detectors containing all three dopants in various concentrations is in accordance with the IAEA recommendations for individual monitoring.

  4. Design optimization of Pixel Structure for α-Si based uncooled Infrared detector

    Directory of Open Access Journals (Sweden)

    Sudha Gupta

    2013-12-01

    Full Text Available In this paper authors present the design and simulation results achieved for pixel structure of amorphous Si (α-Si based bolometer array. Most uncooled IR detectors in the world are based on VOx material. But this is not a standard material in IC technology and has many inherent disadvantages. The α-Si, an alternative material with high TCR is becoming as popular. However, large TCR values, in this material are achieved only in films of high resistivity. To achieve TCR value more than 2.5%/K, α-Si film resistivity is ~ 80 ohms-cm. This gives rise to very large pixel resistance of the order of 100 Mega ohms depending upon the design of the leg structure. This high pixel resistance causes very large noise and hence lower sensitivity. If leg width or membrane thickness is increased in order to reduce the pixel resistance, then this results in higher thermal conductance which also decreases sensitivity. To overcome this problem, pixel structure is so designed that within a pixel, only part of the electrical conduction is through α-Si and rest is through metal. Simulation using Coventorware software has been done to optimize pixel resistance as well as thermal conductance through legs so that maximum sensitivity could be obtained. Optimization is also carried out in order to reduce sensitivity of pixel resistance to variation in material resistivity.Defence Science Journal, 2013, 63(6, pp.581-588, DOI:http://dx.doi.org/10.14429/dsj.63.5758

  5. Development and Performance Evaluations of HfO2-Si and Rare Earth-Si Based Environmental Barrier Bond Coat Systems for SiC/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Ceramic environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiCSiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si based EBC bond coat systems for SiCSiC CMC combustor and turbine airfoil applications are investigated. The coating design approach and stability requirements are specifically emphasized, with the development and implementation focusing on Plasma Sprayed (PS) and Electron Beam-Physic Vapor Deposited (EB-PVD) coating systems and the composition optimizations. High temperature properties of the HfO2-Si based bond coat systems, including the strength, fracture toughness, creep resistance, and oxidation resistance were evaluated in the temperature range of 1200 to 1500 C. Thermal gradient heat flux low cycle fatigue and furnace cyclic oxidation durability tests were also performed at temperatures up to 1500 C. The coating strength improvements, degradation and failure modes of the environmental barrier coating bond coat systems on SiCSiC CMCs tested in simulated stress-environment interactions are briefly discussed and supported by modeling. The performance enhancements of the HfO2-Si bond coat systems with rare earth element dopants and rare earth-silicon based bond coats are also highlighted. The advanced bond coat systems, when

  6. Development of Silicon Multi-strip Detector

    Institute of Scientific and Technical Information of China (English)

    TanJilian; JinGenming; WangHongwei; YuanXiaohua; DuanLiming; LiSonglin; LuZiwei; XuHushan; NingBaojun; TianDayu; WangWei; ZhangLu

    2003-01-01

    Position sensitive detector is very important for nuclear physics experiment. There several techniques can be used to fabricate position sensitive detector, for example, Si-surface barrier method, diffusion method, ion implantation and planar process etc. Among all the techniques mentioned above planar process is the best one. We have developed batch of position sensitive detector -- silicon multi-strip detector by using planar process.

  7. Improved fitting of PIXE spectra: the Voigt profile and Si(Li) detector modeling

    Energy Technology Data Exchange (ETDEWEB)

    Hildner, M.L. [Sandia National Labs., Livermore, CA (United States); Antolak, A.J. [Sandia National Labs., Livermore, CA (United States); Bench, G.S. [Lawrence Livermore National Lab., CA (United States)

    1996-04-11

    The true emitted X-ray lineshape as measured by a Si(Li) detector is the convolution of the intrinsic Lorentzian X-ray lineshape and the detector response function. We demonstrate the necessity of using the Voigt profile -the convolution of a Lorentzian and a Gaussian - to fit the full-energy peak portion of directly measured X-ray lines. By incorporating the Voigtian in our PIXE spectrum fitting code, PIXEF, we have found consistent improvement in the quality of fit and calculated elemental yields. We have also found that the Voigtian fit is required to give an accurate ratio of tail to peak intensity. We attribute the tail to a surface layer of incomplete charge collection (ICC) at the front of the detector. Although this model is improved by appropriately accounting for the loss of photoelectrons that travel back to the ICC layer after being emitted from the intrinsic region, it appears to fail when the full-energy peak is fit to a Gaussian. On the other hand, excellent agreement between the improved model and experiment is found when the full-energy peak is fit to a Voigtian. (orig.).

  8. A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

    OpenAIRE

    Sheng-Wen Chen; Yu-Sheng Wang; Shao-Yu Hu; Wen-Hsi Lee; Chieh-Cheng Chi; Ying-Lang Wang

    2012-01-01

    Amorphous nitrogen-doped silicon carbide (α-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study, the etching stop layers were deposited by using trimethylsilane (3MS) or tetramethylsilane (4MS) with ammonia by plasma-enhanced chemical vapor deposition (PECVD) followed by a procedure for tetra-ethoxyl silane (TEOS) oxide. The depth profile of Cu...

  9. NASA's Advanced Environmental Barrier Coatings Development for SiC/SiC Ceramic Matrix Composites: Understanding Calcium Magnesium Alumino-Silicate (CMAS) Degradations and Resistance

    Science.gov (United States)

    Zhu, Dongming

    2014-01-01

    Environmental barrier coatings (EBCs) and SiCSiC ceramic matrix composites (CMCs) systems will play a crucial role in next generation turbine engines for hot-section component applications because of their ability to significantly increase engine operating temperatures with improved efficiency, reduce engine weight and cooling requirements. The development of prime-reliant environmental barrier coatings is essential to the viability and reliability of the envisioned CMC engine component applications, ensuring integrated EBC-CMC system durability and designs are achievable for successful applications of the game-changing component technologies and lifing methodologies.This paper will emphasize recent NASA environmental barrier coating developments for SiCSiC turbine airfoil components, utilizing advanced coating compositions, state-of-the-art processing methods, and combined mechanical and environment testing and durability evaluations. The coating-CMC degradations in the engine fatigue-creep and operating environments are particularly complex; one of the important coating development aspects is to better understand engine environmental interactions and coating life debits, and we have particularly addressed the effect of Calcium-Magnesium-Alumino-Silicate (CMAS) from road sand or volcano-ash deposits on the durability of the environmental barrier coating systems, and how the temperature capability, stability and cyclic life of the candidate rare earth oxide and silicate coating systems will be impacted in the presence of the CMAS at high temperatures and under simulated heat flux conditions. Advanced environmental barrier coating systems, including HfO2-Si with rare earth dopant based bond coat systems, will be discussed for the performance improvements to achieve better temperature capability and CMAS resistance for future engine operating conditions.

  10. Particle identification with the Silicon Transition Radiation Detector (SiTRD): State of art and future perspectives

    International Nuclear Information System (INIS)

    We are developing a novel Transition Radiation Detector (SiTRD) based on silicon strip detectors (SSDs) operated in a magnetic field region. In this way the trajectory of the radiating particle is deflected with respect to the Transition Radiation X-rays that are absorbed in a detector region far away from the particle track. The SiTRD combines the particle identification performance of a traditional TRD with the high-precision tracking capability of SSDs, and it can be suitable for both accelerator and cosmic ray experiments, whenever particle identification and momentum reconstruction are required. In this paper we will show the experimental results obtained with a reduced scale SiTRD prototype exposed to an electron-pion beam

  11. A fast preamplifier concept for SiPM-based time-of-flight PET detectors

    Science.gov (United States)

    Huizenga, J.; Seifert, S.; Schreuder, F.; van Dam, H. T.; Dendooven, P.; Löhner, H.; Vinke, R.; Schaart, D. R.

    2012-12-01

    Silicon photomultipliers (SiPMs) offer high gain and fast response to light, making them interesting for fast timing applications such as time-of-flight (TOF) PET. To fully exploit the potential of these photosensors, dedicated preamplifiers that do not deteriorate the rise time and signal-to-noise ratio are crucial. Challenges include the high sensor capacitance, typically >300 pF for a 3 mm×3 mm SiPM sensor, as well as oscillation issues. Here we present a preamplifier concept based on low noise, high speed transistors, designed for optimum timing performance. The input stage consists of a transimpedance common-base amplifier with a very low input impedance even at high frequencies, which assures a good linearity and avoids that the high detector capacitance affects the amplifier bandwidth. The amplifier has a fast timing output as well as a 'slow' energy output optimized for determining the total charge content of the pulse. The rise time of the amplifier is about 300 ps. The measured coincidence resolving time (CRT) for 511 keV photon pairs using the amplifiers in combination with 3 mm×3 mm SiPMs (Hamamatsu MPPC-S10362-33-050C) coupled to 3 mm×3 mm×5 mm LaBr3:Ce and LYSO:Ce crystals equals 95 ps FWHM and 138 ps FWHM, respectively.

  12. A fast preamplifier concept for SiPM-based time-of-flight PET detectors

    International Nuclear Information System (INIS)

    Silicon photomultipliers (SiPMs) offer high gain and fast response to light, making them interesting for fast timing applications such as time-of-flight (TOF) PET. To fully exploit the potential of these photosensors, dedicated preamplifiers that do not deteriorate the rise time and signal-to-noise ratio are crucial. Challenges include the high sensor capacitance, typically >300 pF for a 3 mm×3 mm SiPM sensor, as well as oscillation issues. Here we present a preamplifier concept based on low noise, high speed transistors, designed for optimum timing performance. The input stage consists of a transimpedance common-base amplifier with a very low input impedance even at high frequencies, which assures a good linearity and avoids that the high detector capacitance affects the amplifier bandwidth. The amplifier has a fast timing output as well as a ‘slow’ energy output optimized for determining the total charge content of the pulse. The rise time of the amplifier is about 300 ps. The measured coincidence resolving time (CRT) for 511 keV photon pairs using the amplifiers in combination with 3 mm×3 mm SiPMs (Hamamatsu MPPC-S10362-33-050C) coupled to 3 mm×3 mm×5 mm LaBr3:Ce and LYSO:Ce crystals equals 95 ps FWHM and 138 ps FWHM, respectively.

  13. Superconducting characteristics of a MgB2 neutron detector fabricated on SiN membrane

    International Nuclear Information System (INIS)

    We report a fabrication process for membrane-structured superconducting MgB2 neutron detectors and measurement of superconducting DC-characteristics. We prepared a MgB2 thin film on a SiN-film-coated Si substrate using multiple-target sputtering system. The 200-nm-thick MgB2 thin film was processed to create meandering lines by e-beam lithography technique, where the line width was 3 μm and the total length reached 6.3 mm. After the front side of the device had been fabricated, the back side of the device was etched with anisotropic Si etching using ethylene diamine pyrocatechol and etching apparatus to increase the sensitivity of the device. The membrane-structured MgB2 device showed good performance of the transition to superconductivity, namely, a T C,onset of 26.24 K, a T C,offset of 26.02 K, ΔT c of 0.22 K, and an RRR of 1.15

  14. Na effect on flexible Cu(In,Ga)Se2 photovoltaic cell depending on diffusion barriers (SiOx, i-ZnO) on stainless steel

    International Nuclear Information System (INIS)

    Cu(In,Ga)Se2 (CIGS) based-photovoltaic (PV) cells with different diffusion barriers of SiOx and i-ZnO were fabricated on stainless steel (STS) substrate and their electrical characteristics were investigated by measuring J–V curves under illuminated and dark conditions. The physical properties of the CIGS film depending on type of diffusion barrier were also analyzed using X-ray diffraction and secondary ion mass spectroscopy. The efficiency of the CIGS-PV cell with i-ZnO barrier was approximately 2% higher than that with the SiOx barrier. Through the analysis of dark J–V curves, we discovered that distinctive defects were formed in the band gap of CIGS based on which diffusion barrier contacted the STS. The diffraction pattern showed a slightly different tendency of the peak intensity ratio of (220/204)/(112) in the PV cell with the i-ZnO barrier, which was slightly higher than that in the PV cell with SiOx barrier. In elemental depth profile, a deficient Ga profile was observed near the surface of the CIGS film with the SiOx barrier, and an abundant Na profile within the CIGS film with the i-ZnO barrier was detected. This is attributed to a difference in thermal conduction through the diffusion barriers during CIGS film growth, originating from the larger thermal conductivity of ZnO compared with SiOx. - Highlights: • We fabricated CIGS-PV cells with diffusion barriers of SiOx and i-ZnO on STS. • The efficiency of CIGS-PV cell with i-ZnO was ∼2% higher than that with SiOx. • Distinctive defects were formed into CIGS absorber depending on diffusion barrier

  15. Na effect on flexible Cu(In,Ga)Se{sub 2} photovoltaic cell depending on diffusion barriers (SiOx, i-ZnO) on stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Woo-Jung; Cho, Dae-Hyung; Wi, Jae-Hyung; Han, Won Seok [Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Kim, Jeha [Insitute of Photovoltaics, Cheongju University, Cheongju 360-764 (Korea, Republic of); Chung, Yong-Duck, E-mail: ydchung@etri.re.kr [Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Department of Advanced Device Engineering, Korea University of Science and Technology, Daejeon 305-350 (Korea, Republic of)

    2014-10-15

    Cu(In,Ga)Se{sub 2} (CIGS) based-photovoltaic (PV) cells with different diffusion barriers of SiOx and i-ZnO were fabricated on stainless steel (STS) substrate and their electrical characteristics were investigated by measuring J–V curves under illuminated and dark conditions. The physical properties of the CIGS film depending on type of diffusion barrier were also analyzed using X-ray diffraction and secondary ion mass spectroscopy. The efficiency of the CIGS-PV cell with i-ZnO barrier was approximately 2% higher than that with the SiOx barrier. Through the analysis of dark J–V curves, we discovered that distinctive defects were formed in the band gap of CIGS based on which diffusion barrier contacted the STS. The diffraction pattern showed a slightly different tendency of the peak intensity ratio of (220/204)/(112) in the PV cell with the i-ZnO barrier, which was slightly higher than that in the PV cell with SiOx barrier. In elemental depth profile, a deficient Ga profile was observed near the surface of the CIGS film with the SiOx barrier, and an abundant Na profile within the CIGS film with the i-ZnO barrier was detected. This is attributed to a difference in thermal conduction through the diffusion barriers during CIGS film growth, originating from the larger thermal conductivity of ZnO compared with SiOx. - Highlights: • We fabricated CIGS-PV cells with diffusion barriers of SiOx and i-ZnO on STS. • The efficiency of CIGS-PV cell with i-ZnO was ∼2% higher than that with SiOx. • Distinctive defects were formed into CIGS absorber depending on diffusion barrier.

  16. Effects of Surface and Crystalline Defects on Reverse Characteristics of 4H-SiC Junction Barrier Schottky Diodes

    Science.gov (United States)

    Katsuno, Takashi; Watanabe, Yukihiko; Fujiwara, Hirokazu; Konishi, Masaki; Yamamoto, Takeo; Endo, Takeshi

    2011-04-01

    To clarify the relationship between the dispersed reverse characteristics of 4H-SiC junction barrier Schottky (JBS) diodes and defects, we investigated the sensitivity of the reverse characteristics to surface and crystalline defects in 4H-SiC epitaxial layers. Strong correlations were obtained between the reverse characteristics of 4H-SiC JBS diodes and surface defects. Micropipes or particles reduced blocking voltage and carrot defects increased leakage current. Furthermore, the leakage current of 4H-SiC JBS diodes depends on the etch pit density of threading dislocations (TDs). Etch pits formed from TDs increased leakage current by about 10-9 A in samples without surface defects. In addition, hexagonal etch pits formed from unusual crystalline defects were observed; they also increased leakage current.

  17. 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

    International Nuclear Information System (INIS)

    Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The relative dielectric constant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO2 dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leakage current 20 μA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Performance of microdot (MDOT) detectors with conductive coating of doped amorphous silicon carbide (a-Si:C:H)

    International Nuclear Information System (INIS)

    A conductive coating of doped amorphous silicon carbide (a-Si:C:H) has been used in the fabrication of microdot (MDOT) detectors, to minimize the defocusing, away from the anodes, of the drifting primary electrons. This defocusing is caused by the existence of the readout line passing below the insulating layer. The defocusing effect and other effects of the conductive coating on the performance of these detectors fabricated in this way have been investigated

  19. Characterization of Si hybrid CMOS detectors for use in the soft X-ray band

    Energy Technology Data Exchange (ETDEWEB)

    Prieskorn, Zachary, E-mail: zpriesko@gmail.com; Griffith, Christopher V.; Bongiorno, Stephen D.; Falcone, Abraham D.; Burrows, David N.

    2013-07-21

    We report on the characterization of four Teledyne Imaging Systems HAWAII Hybrid Si CMOS detectors designed for X-ray detection. Three H1RG detectors were studied along with a specially configured H2RG. Read noise measurements were performed, with the lowest result being 7.1 e{sup −} RMS. Interpixel capacitive crosstalk (IPC) was measured for the three H1RGs and for the H2RG. The H1RGs had IPC upper limits of 4.0–5.5% (up and down pixels) and 8.7–9.7% (left and right pixels), indicating a clear asymmetry. Energy resolution is reported for two X-ray lines, 1.5 and 5.9 keV, at multiple temperatures between 150 and 210 K. The best resolution measured at 5.9 keV was 250 eV (4.2%) at 150 K, with IPC contributing significantly to this measured energy distribution. The H2RG, with a unique configuration designed to decrease the capacitive coupling between ROIC pixels, had an IPC of 1.8±1.0% indicating a dramatic improvement in IPC with no measurable asymmetry. We also measured dark current as a function of temperature for each detector. For the detector with the lowest dark current, at 150 K, we measured a dark current of 0.020±0.001 (e{sup −} s{sup −1} pixel{sup −1}). There is also a consistent break in the fit to the dark current data for each detector. Above 180 K, all the data can be fit by the product of a power law in temperature and an exponential. Below 180 K the dark current decreases more slowly; a shallow power law or constant must be added to each fit, indicating a different form of dark current is dominant in this temperature regime. Dark current figures of merit at 293 K are estimated from the fit for each detector.

  20. Investigation of analog charge multiplexing schemes for SiPM based PET block detectors.

    Science.gov (United States)

    Downie, Evan; Yang, Xin; Peng, Hao

    2013-06-01

    Reducing the number of output channels in pixelated positron emission tomography (PET) detectors is an effective way to minimize cost and complexity while minimizing the impact on detector performance. This paper compares the system performance of two multiplexing schemes by using both simulation and experimental studies, with respect to spatial, time and energy resolutions. Simulations were performed using the SPICE environment to investigate differences in resulting flood histograms and rising edge slopes. Experiments were performed using lutetium-yttrium oxyorthosilicate (LYSO) crystals coupled to a SensL ArraySL-4 silicon photomultiplier (SiPM) connected to interchangeable circuit boards containing the two multiplexing schemes of interest. Three crystal configurations were tested: a single crystal element (3×3×20 mm(3)), 2×2 array (crystal pitch: 2×2) and 6×6 array (crystal pitch: 2.1×2.1×20 mm(3)). Good agreement was found between the simulations and experiment results. It is found that the capacitive multiplexing is able to achieve an improved time resolution of good uniformity (average of 1.11 ± 0.01 ns and 1.90 ± 0.03 ns for the arrays, respectively) and crystal separation, compared to the resistive multiplexing (average of 1.95 ± 0.03 ns and 3.33 ± 0.10 ns). On the other hand, the resistive multiplexing demonstrates slightly improved energy resolution (11 ± 0.1% and 22 ± 0.6%, compared to 12 ± 0.1% and 24 ± 0.4% for the capacitive array), which is believed to be caused by the RC circuit formed between the splitting capacitors and the input impedance of amplifiers. The relevancy of this work to the PET block detector design using SiPM arrays is also discussed, including light sharing, edge compression and gain variation among SiPM pixels. PMID:23680653

  1. The distribution of the barrier height in Al–TiW–Pd2Si/n-Si Schottky diodes from I–V–T measurements

    International Nuclear Information System (INIS)

    The forward and reverse bias current–voltage (I–V) characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes (SBDs) were measured in the temperature range of 300–400 K. The estimated zero-bias barrier height ΦB0 and the ideality factor n assuming thermionic emission (TE) theory show a strong temperature dependence. While n decreases, ΦB0 increases with increasing temperature. The Richardson plot is found to be linear in the temperature range measured, but the activation energy value of 0.378 eV and the Richardson constant (A*) value of 15.51 A cm−2 K−2 obtained in this plot are much lower than the known values. Such behavior is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution of barrier heights (BHs) due to BH inhomogeneities that prevail at the interface. Also, the ΦB0 versus q/2kT plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and ΦB0 = 0.535 eV and σ0 = 0.069 V for the mean BH and zero-bias standard deviation, respectively, have been obtained from this plot. Thus, the modified ln(I0/T2) − q2σ20/2k2T2 versus q/kT plot gives ΦB0 and A* as 0.510 eV and 121.96 A cm−2 K−2, respectively. This value of the Richardson constant 121.96 A cm−2 K−2 is very close to the theoretical value of 120 A K−2 cm−2 for n-type Si. Hence, it has been concluded that the temperature dependence of the forward I–V characteristics of the Al–TiW–Pd2Si/n-Si Schottky barrier diodes can be successfully explained on the basis of a thermionic emission mechanism with a Gaussian distribution of the BHs

  2. Deep energy levels in RuO2/4H–SiC Schottky barrier structures

    OpenAIRE

    Stuchlikova, L; Buc, D; Harmatha, L; Helmersson, U; Chang, WH; Bello, I

    2006-01-01

    RuO2/4H–SiC Schottky diode structures based on n-type 4H–SiC (7×1017 cm–3) with stoichiometric RuO2 Schottky contacts were characterized by electrical capacitance-voltage and current voltage methods and deep-level transient spectroscopy in order to determine their unique semiconducting and electronic properties. The RuO2 films exhibited electrical conductivity of 60 µ cm for Schottky barrier heights of approximately 0.88 eV. These Schottky structures revealed two deep energy levels with t...

  3. Schottky barriers at undoped epitaxial GaAs films, used for nuclear radiation detectors

    International Nuclear Information System (INIS)

    the standard methods is difficult. The most technologically advanced metals with high work function, titanium and platinum were used as the material of rectifying contact. The high quality of the proposed contacts was confirmed by measurements of reverse dark leakage currents, which were 200 pA for the best samples at room temperature and 50 V reverse bias, regardless of the selected material of Schottky contact. The fabricated detectors are designed mainly for recording of 20-60 keV energy γ -rays, due to high efficiency in the range of the photoelectric effect. The γ -ray energy spectra were measured using 241Am and 57Co sources with 130 and 26.5 kBq activity, respectively. All eight lines of 241Am source are clearly visible in the spectrum: 14.0, 17.6, 21.0, 26.3 and 59.5 keV. The response is also linear, the coefficient of linear approximation determination is not worse than 0.9999. Almost the same energy resolution 2.5 keV was observed at 2.3 keV generator peak width in the energy spectrum on 59.54 keV line in both types of structures with Schottky barriers based on Ti and , the resolution on 17.6 line was worse than 2.8 keV. The effectiveness of charge collection in the fabricated detectors was close to 100% at reverse bias in (10-15) V. The difference in charge collection efficiency was observed only at zero bias. For example, the collection of electronic component in structures with Pt/TiN/Au contact at zero bias is at 95% level, while for Ti/Pd/Au contacts it is about 75%. (author)

  4. Competition between the barrier and injection mechanisms of nonlinearity of the current-voltage characteristic in Mott-barrier detector diodes

    Science.gov (United States)

    Shashkin, V. I.; Vostokov, N. V.

    2009-08-01

    We obtain an analytical solution to the problem of transverse injection current in an undoped semiconductor i layer of arbitrary thickness with account of self-consistent boundary conditions. Charge transfer in the semiconductor bulk is described in the drift-diffusion approximation. Current transfer through the boundaries of an undoped layer is described in terms of the thermoelectron emission theory. Thus, the generalized thermoemission-diffusion approach applies for semiconductors with both low and high mobilities of charge carriers. On the basis of the obtained solution, we analyze the characteristics of the current nonlinearity of the Mott-barrier diodes. The generalized approach is used for describing current transfer in low-barrier diodes based on Mott contacts with near-surface δ-doping. Characteristics of detection of low-barrier diodes are analyzed. Limiting values of the volt-watt and threshold sensitivities of the detectors based on these diodes in the subterahertz frequency range (up to 1 THz) are determined.

  5. In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures.

    Science.gov (United States)

    Byrne, Conor; Brennan, Barry; McCoy, Anthony P; Bogan, Justin; Brady, Anita; Hughes, Greg

    2016-02-01

    Copper/SiO2/Si metal-oxide-semiconductor (MOS) devices both with and without a MnSiO3 barrier layer at the Cu/SiO2 interface have been fabricated in an ultrahigh vacuum X-ray photoelectron spectroscopy (XPS) system, which allows interface chemical characterization of the barrier formation process to be directly correlated with electrical testing of barrier layer effectiveness. Capacitance voltage (CV) analysis, before and after tube furnace anneals of the fabricated MOS structures showed that the presence of the MnSiO3 barrier layer significantly improved electric stability of the device structures. Evidence of improved adhesion of the deposited copper layer to the MnSiO3 surface compared to the clean SiO2 surface was apparent both from tape tests and while probing the samples during electrical testing. Secondary ion mass spectroscopy (SIMS) depth profiling measurements of the MOS test structures reveal distinct differences of copper diffusion into the SiO2 dielectric layers following the thermal anneal depending on the presence of the MnSiO3 barrier layer. PMID:26732185

  6. Study of commercial Si-PIN photodiode as an x-ray detector

    International Nuclear Information System (INIS)

    Two commercial Si-PIN photodiode were evaluated as a low cost X-ray detector in conjunction with forward biased FET preamplifiers. Evaluation was done at room temperature and at a temperature of about -10degC using X-ray spectroscopy amplifier with 241Am radio active source. The results shows 700 eV full width at half maximum for 241Am γ-ray (59.5 keV) with S5821-02 from Hamamatsu Photonics at low temperature and 800 eV with S1722-02 at the same conditions. The S1722-02 photodiode showed almost flat response up to 20 keV X-ray energy. The improvement of photodiode and FET cooling system and proper selection of FET will be expected to show better resolution. (author)

  7. Evaluation of silicon-germanium (SiGe) bipolar technologies for use in an upgraded atlas detector

    International Nuclear Information System (INIS)

    Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies promise several advantages over CMOS for the front-end readout electronics for the ATLAS upgrade. We have evaluated the relative merits of the latest generations of IBM SiGe HBT BiCMOS technologies, the 8WL and 8HP platforms. These 130 nm SiGe technologies show promise to operate at lower power than do CMOS technologies and would provide a viable alternative for the silicon strip detector and liquid argon calorimeter upgrades, provided that the radiation tolerance studies at multiple gamma and neutron irradiation levels, included in this investigation, show them to be sufficiently radiation tolerant.

  8. Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers

    International Nuclear Information System (INIS)

    The development of SiC minimum ionising particle (MIP) detectors imposes severe constrains in the electronic quality and the thickness of the material due to the relatively high value of the energy required to produce an electron-hole pair in this material by MIP against the value for Si. In this work, particle detectors were made using semiconductor epitaxial undoped n-type 4H-SiC as the detection medium. The thickness of the epilayer is on the order of 40 μm and the detectors are realised by the formation of a nickel silicide on the silicon surface of the epitaxial layer (Schottky contact) and of the ohmic contact on the back side of 4H-SiC substrate. The low doping concentration ( congruent with 6x1013 cm-3) of the epilayer allows the detector to be totally depleted at relatively low reverse voltages ( congruent with 100 V). We present experimental data on the charge collection properties by using 5.486 MeV α-particles impinging on the Schottky contact. A 100% charge collection efficiency (CCE) is demonstrated for reverse voltages higher than the one needed to have a depletion region equal to the α-particle extrapolated range in SiC. The diffusion contribution of the minority change carriers to CCE is pointed out. By comparing measured CCE values to the outcomes of drift-diffusion simulation, values are inferred for the hole lifetime within the neutral region of the charge carrier generation layer

  9. Dosimetric properties of the newly developed KLT-300 (LiF:Mg,Cu,Na,Si) TL detector

    International Nuclear Information System (INIS)

    The dosimetric properties of the newly developed KLT-300 (KAERI LiF:Mg,Cu,Na,Si TL detector) in KAERI (Korea Atomic Energy Research Institute) were investigated. The sensitivity of the TL detector was about 30 times higher than that of the TLD-100 by light integration. In the study of the dose linearity of the detector, the dose response was very linear up to 10 Gy and a sublinear response was observed at higher doses. The energy response of the detector was studied for photon energies from 20 to 662 keV. The results show that a maximum response of 1.004 at 53 keV and a minimum response of 0.825 at 20 keV were observed. The reproducibility study for the TL detector was also carried out. The coefficients of variation for each detector separately did not exceed 0.016, and for all the 10 detectors collectively it was 0.0054. IEC Standard requires that the coefficient of variation shall not exceed 0.075. So, the reproducibility of this new TL detector sufficiently satisfied the IEC requirements. A detection threshold of the detector was investigated and found to be 70 nGy by Harshaw 4500 TLD Reader

  10. Dosimetric properties of the newly developed KLT-300 (LiF:Mg,Cu,Na,Si) TL detector.

    Science.gov (United States)

    Lee, J I; Kim, J L; Chang, S Y; Chung, K S; Choe, H S

    2004-01-01

    The dosimetric properties of the newly developed KLT-300 (KAERI LiF:Mg,Cu,Na,Si TL detector) in KAERI (Korea Atomic Energy Research Institute) were investigated. The sensitivity of the TL detector was about 30 times higher than that of the TLD-100 by light integration. In the study of the dose linearity of the detector, the dose response was very linear up to 10 Gy and a sublinear response was observed at higher doses. The energy response of the detector was studied for photon energies from 20 to 662 keV. The results show that a maximum response of 1.004 at 53 keV and a minimum response of 0.825 at 20 keV were observed. The reproducibility study for the TL detector was also carried out. The coefficients of variation for each detector separately did not exceed 0.016, and for all the 10 detectors collectively it was 0.0054. IEC Standard requires that the coefficient of variation shall not exceed 0.075. So, the reproducibility of this new TL detector sufficiently satisfied the IEC requirements. A detection threshold of the detector was investigated and found to be 70 nGy by Harshaw 4500 TLD Reader. PMID:15856584

  11. Study of barrier inhomogeneities using I–V–T characteristics of Mo/4H–SiC Schottky diode

    International Nuclear Information System (INIS)

    In the present work we investigate the forward current–voltage (I–V) characteristics, over a wide temperature range 298–498 K, of Mo/4H–SiC Schottky diode for which aluminum ion implantation was used to create the high resistivity layer forming the guard ring. The (I–V) analysis based on Thermionic Emission (TE) theory shows a decrease of the barrier height ϕB and an increase of the ideality factor n when the temperature decreases. These anomalies are mainly due to the barrier height inhomogeneities at the metal/semiconductor interface as we get a Gaussian distribution of the barrier heights when we plot the apparent barrier height ϕap versus q/2kT. The mean barrier height and the standard deviation obtained values are ϕ¯B0=1.160 eV and σ0=88.049 mV, respectively. However, by means of the modified Richardson plot Ln(Is/T2)−(q2σ02/2k2T2) versus q/kT, the mean barrier height and the Richardson constant values obtained are ϕ¯B0=1.139 eV and A*=129.425 A/cm2 K2, respectively. The latter value of ϕ¯B0 matches very well with the mean barrier height obtained from the plot of ϕap versus q/2kT. The Richardson constant is much closer to the theoretical value of 146 A/cm2 K2. The series resistance Rs is also estimated from the forward current–voltage characteristics of Mo/4H–SiC Schottky contact. This parameter shows strong temperature dependence. The T0 effect is validated for the 298–498 K temperature range for the used Schottky diode and provides a clear evidence for the barrier inhomogeneity at the Mo/4H–SiC interface. Finally, we note the impact of the implantation process as well as the choice of the used ion on the characterized parameters of the Schottky contact

  12. Characterization of Si Hybrid CMOS Detectors for use in the Soft X-ray Band

    CERN Document Server

    Prieskorn, Zachary; Bongiorno, Stephen D; Falcone, Abraham D; Burrows, David N

    2013-01-01

    We report on the characterization of four Teledyne Imaging Systems HAWAII Hybrid Si CMOS detectors designed for X-ray detection. Three H1RG detectors were studied along with a specially configured H2RG. Read noise measurements were performed, with the lowest result being 7.1 e- RMS. Interpixel capacitive crosstalk (IPC) was measured for the three H1RGs and for the H2RG. The H1RGs had IPC upper limits of 4.0 - 5.5 % (up & down pixels) and 8.7 - 9.7 % (left & right pixels), indicating a clear asymmetry. Energy resolution is reported for two X-ray lines, 1.5 & 5.9 keV, at multiple temperatures between 150 - 210 K. The best resolution measured at 5.9 keV was 250 eV (4.2 %) at 150 K, with IPC contributing significantly to this measured energy distribution. The H2RG, with a unique configuration designed to decrease the capacitive coupling between ROIC pixels, had an IPC of 1.8 +/- 1.0 % indicating a dramatic improvement in IPC with no measurable asymmetry. We also measured dark current as a function of ...

  13. Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model

    International Nuclear Information System (INIS)

    We report highly ideal (n 14–1016 cm−3, apart from a slight decrease consistent with image force lowering. This remarkable uniformity was achieved by careful optimization of the annealing of the Schottky interface to minimize non-idealities that could lead to inhomogeneity. Tung's barrier inhomogeneity model was used to quantify the level of inhomogeneity in the optimized annealed diodes. The estimated ‘bulk’ barrier height (1.75 eV) was consistent with the Shockley–Mott limit for the Ni–Si/4H-SiC interface, implying an unpinned Fermi level. But the model was not useful to explain the poor ideality in unoptimized, as-deposited Schottky contacts (n = 1.6 − 2.5). We show analytically and numerically that only idealities n < 1.21 can be explained using Tung's model, irrespective of material system, indicating that the barrier height inhomogeneity is not the only cause of poor ideality in Schottky diodes. For explaining this highly non-ideal behaviour, other factors (e.g. interface traps, morphological defects, extrinsic impurities, etc) need to be considered. (paper)

  14. Model and analysis of drain induced barrier lowering effect for 4H-SiC metal semiconductor field effct transistor

    Institute of Scientific and Technical Information of China (English)

    Cao Quan-Jun; Zhang Yi-Men; Jia Li-xin

    2009-01-01

    Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region. this paper investigates the behavior of DIBL(drain induced barrier lowering)effect for short channel 4H-SiC metal semiconductor field effect transistors(MESFETs). An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H-SiC MESFET is presented and thus verified. According to the presented model. it analyses the threshold voltage for short channel device on the L/a(channel length/channel depth)ratio, drain applied voltage VDS and channel doping concentration ND, thus providing a good basis for the design and modelling of short channel 4H-SiC MESFETs device.

  15. A self-biased neutron detector based on an SiC semiconductor for a harsh environment.

    Science.gov (United States)

    Ha, Jang Ho; Kang, Sang Mook; Park, Se Hwan; Kim, Han Soo; Lee, Nam Ho; Song, Tae-Yung

    2009-01-01

    Neutron detector based on radiation-hard semiconductor materials like SiC, diamond and AlN has recently emerged as an attractive device for an in-core reactor neutron flux monitoring, a spent fuel characterization, and a home land security application. For the purpose of field measurement activity, a radiation detector having a low-power consumption, a mechanical stability and a radiation hardness is required. Our research was focused on the development of a radiation-resistive neutron semiconductor detector based on a wide band-gap SiC semiconductor. And also it will be operated at a zero-biased voltage using a strong internal electric field. The charge collection efficiency (CCE) was over 80% when the biased voltage was zero. When the biased voltage was applied above 20V, the charge collection efficiency reached 100%. PMID:19362006

  16. Preparation and properties of SiCN diffusion barrier layer for Cu interconnect in ULSI

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ji-cheng; SHI Zhi-jie; ZHENG Xu-qiang

    2009-01-01

    SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si-C, Si-N, C-N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.

  17. ITO/p+nc-Si:H contact barrier effects on n-i-p′-p silicon solar cell performances

    International Nuclear Information System (INIS)

    Highlights: ► Effect of the front contact barrier height for electrons (φb0) or holes (φh) on n-i-p′-p based solar cell performances. ► Current–voltage characteristics (J–V), under dark and illumination conditions, for the studied structure are calculated. ► The reverse bias currents do not depend on the front contact barrier heights. ► In forward direction, the contact barrier influences strongly the J–V characteristic in the dark and under illumination. ► Output cell parameters are improved, when φb0 increases. -- Abstract: The computer program AMPS-1D (analysis of microelectronic and photonic structures) has been used to explore the effect of front contact barrier heights for electrons (φb0) or holes (φh) on the performances of n-i-p′-p amorphous/nanocrystalline silicon based solar cell, with a p type hydrogenated nanocrystalline silicon double layer and with no back reflector. φb0 is the result of band bending at the indium tin oxide (ITO)/p+doped hydrogenated nanocrystalline silicon (p nc-Si:H) interface. This paper presents results for a n-i-p′-p device, when the p nc-Si:H layer is used as a window and the p′-nc-Si:H layer as a buffer. Band diagram at thermodynamic equilibrium and current–voltage characteristics (J–V), under dark and illumination conditions, for the considered solar cell structure, are calculated. The modeling showed that the reverse bias currents do not depend on the front contact barrier heights. However, in the forward direction, this contact barrier influences strongly the J–V characteristic in the dark and under illumination. As a result, when φb0 increases, output cell parameters, like open circuit voltage (VOC), fill factor (FF) and efficiency (Eff) increase. The best values obtained are 0.893 V, 0.757 and 8.04%, respectively. These values correspond to a front contact barrier height (φb0) equal to 1.65 eV. Such a value of φb0 can be realized experimentally by using an indium tin oxide (ITO) front

  18. Considerations for application of Si(Li) detectors in analyses of sub-keV, ion-induced x rays

    International Nuclear Information System (INIS)

    Spectroscopy of ion-induced x rays is commonly performed using lithium-drifted, silicon detectors, Si(Li), with beryllium windows. Strong absorption of x rays with energies below 1 keV occurs in even the thinnest commercially available beryllium windows and precludes useful analysis of sub-keV x rays. Access to the sub-keV x ray region can be achieved using windowless (WL) and ultra-thin-windowed (UTW) Si(Li) detectors. These detectors have been shown to be useful for spectroscopy of x rays with energies above approximately 200 eV. The properties of such detectors are reviewed with regard to analysis of ion-induced x rays. In particular, considerations of detection efficiency, output linearity, energy resolution, peak shapes, and vacuum requirements are presented. The use of ion excitation for determination of many detector properties serves to demonstrate the usefulness of WL and UTW detectors for the spectroscopy of sub-keV, ion-induced x rays. 23 refs., 4 figs

  19. Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Lingqin, E-mail: lqhuang@jsnu.edu.cn, E-mail: dwang121@dlut.edu.cn [School of Electrical Engineering and Automation, Jiangsu Normal University, Xuzhou 221116 (China); Wang, Dejun, E-mail: lqhuang@jsnu.edu.cn, E-mail: dwang121@dlut.edu.cn [School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024 (China)

    2015-05-28

    The barrier characteristics of Pt contacts to relatively highly doped (∼1 × 10{sup 18 }cm{sup −3}) 4H-SiC were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the temperature range of 160–573 K. The barrier height and ideally factor estimated from the I-V characteristics based on the thermionic emission model are abnormally temperature-dependent, which can be explained by assuming the presence of a double Gaussian distribution (GD) of inhomogeneous barrier heights. However, in the low temperature region (160–323 K), the obtained mean barrier height according to GD is lower than the actual mean value from C-V measurement. The values of barrier height determined from the thermionic field emission model are well consistent with those from the C-V measurements, which suggest that the current transport process could be modified by electron tunneling at low temperatures.

  20. Development of Ion-Implanted Si-PIN Semiconductor Radiation Detector%离子注入型Si-PIN半导体探测器的研制

    Institute of Scientific and Technical Information of China (English)

    宋明东; 卜忍安

    2011-01-01

    本文系统地介绍了Si-PIN探测器对带电粒子、中子、射线的探测原理.针对灵敏面积为φ30mm×420μm的Si-PIN探测器,详细地介绍了设计方法和工艺流程,并指出了影响探测器性能的关键工艺.采用离子注入和平面工艺不仅能够降低漏电流,提高探测器的能量分辨率,而且使得探测器对高温环境和真空都很稳定.最后初步介绍了探测器的电特性(I-V特性,C-V特性)的变化趋势,以及探测特性参数的测量方法.%The principle of Si-PIN semiconductor detector detecting charged particle, neutron and radiation are introduced systematically in this article. The design procedures and technology process of the detector whose sensitive area is φ30 mm X 420 um are introduced. The key technologies which affect performance of the detector are also presented. The ion-implanted planar technology could reduce leakage current and enhance resolution of the detector as well as improves stability of the detector in high-temperature and vacuum environment. At last, I-V and C-V characteristics curves as well as detecting characteristic parameters are also introduced preliminarily.

  1. Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

    Directory of Open Access Journals (Sweden)

    J. H. Yum

    2012-01-01

    Full Text Available In a previous study, we have demonstrated that beryllium oxide (BeO film grown by atomic layer deposition (ALD on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs. Si MOSCAPs and MOSFETs with a BeO/HfO2 gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

  2. Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe

    International Nuclear Information System (INIS)

    Highlights: • The interface characteristics of graphene/n-type Si devices are measured. • The actual work function of graphene is examined with the Kelvin probe. • An analysis is conducted according to the Schottky–Mott limit. • The Fermi energy level at the graphene/n-type Si interfaces is unpinned. • The Schottky barrier value is dependent on the work function of graphene. - Abstract: The interface characteristics of graphene/n-type Si samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable Schottky barrier value. For graphene/n-type Si samples with (without) sulfide treatment, the Schottky barrier height is 0.86 (0.78) eV. The Schottky barrier height was increased from 0.78 to 0.86 eV, indicating that sulfide treatment is effective in passivating the surface of Si (owing to the formation of Si–S bonds). To determine the Fermi-level pinning/unpinning at the graphene/n-type Si interfaces with sulfide treatment, an analysis is conducted according to the Schottky–Mott limit and the actual work function of graphene is examined with the Kelvin probe. It is shown that the Fermi energy level is unpinned and the Schottky barrier value is dependent on the work function of graphene. Investigation of graphene/n-type Si interfaces is important, and providing the other technique for surface potential control is possible

  3. Development of cryogenic Si detectors by CERN RD39 Collaboration for ultra radiation hardness in SLHC environment

    CERN Document Server

    Li, Z; Anbinderis, P; Anbinderis, T; D’Ambrosio, N; de Boer, Wim; Borchi, E; Borer, K; Bruzzi, M; Buontempo, S; Chen, W; Cindro, V; Dierlamm, A; Eremin, V; Gaubas, E; Gorbatenko, V; Grigoriev, E; Hauler, F; Heijne, Erik H M; Heising, S; Hempel, O; Herzog, R; Härkönen, J; Ilyashenko, I; Janos, S; Jungermann, L; Kalesinskas, V; Kapturauskas, J; Laiho, R; Luukka, P; Mandic, I; De Masi, R; Menichelli, D; Mikuz, M; Militaru, O; Niinikosky, T O; O’Shea, V; Pagano, S; Paul, S; Piotrzkowski, K; Pretzl, K; Rato-Mendes, P; Rouby, X; Ruggiero, G; Smith, K; Sonderegger, P; Sousa, P; Tuominen, E; Tuovinen, E; Verbitskaya, E; Vaitkus, J; Wobst, E; Zavrtanik, M

    2007-01-01

    There are two key approaches in our CERN RD 39 Collaboration efforts to obtain ultra-radiation-hard Si detectors: (1) use of the charge/current injection to manipulate the detector internal electric field in such a way that it can be depleted at a modest bias voltage at cryogenic temperature range (150 K), and (2) freezing out of the trapping centers that affects the CCE at cryogenic temperatures lower than that of the liquid nitrogen (LN2) temperature. In our first approach, we have developed the advanced radiation hard detectors using charge or current injection, the current injected diodes (CID). In a CID, the electric field is controlled by injected current, which is limited by the space charge, yielding a nearly uniform electric field in the detector, independent of the radiation fluence. In our second approach, we have developed models of radiation-induced trapping levels and the physics of their freezing out at cryogenic temperatures.

  4. POCl3 diffusion with in-situ SiO2 barrier for selective emitter multicrystalline solar grade silicon solar cells

    OpenAIRE

    Urrejola, Elias; Kristian, Peter; Soiland, Anne-Karin; Enebakk, Erik

    2009-01-01

    We present an innovative process for the formation of a selective emitter by using an advanced phosphorous glass as a barrier layer against subsequent diffusion. The advanced barrier glass was achieved by the formation of a standard phosphorous glass treated with additional thermal oxidation immediately after deposition in the same process tube. The resistant layer is used as a barrier for the second diffusion after selective opening of the finger contact areas by screen printing of a SiO2 et...

  5. Annealing effects on charge collection efficiency of an electron-irradiated 4H-SiC particle detector

    International Nuclear Information System (INIS)

    Thermal annealing effects on the charge collection efficiency (CCE) of an electron-irradiated 4H silicon carbide Schottky barrier diode (SBD) particle detector have been studied. The CCE of the SBD detector is degraded by 1 MeV electrons with a fluence of 1×1015 cm-2. The degraded CCE recovers with low temperature annealing up to 300°C. However, CCE starts to decrease again by annealing at 350°C. Conventional electrical characterization such as current and capacitance vs voltage measurements, deep level transient spectroscopy used to understand the CCE variation on annealing is discussed. (author)

  6. Energy resolution of small scintillation detectors with SiPM light readout

    Science.gov (United States)

    Grodzicka, M.; Moszyński, M.; Szczęśniak, T.; Kapusta, M.; Szawłowski, M.; Wolski, D.

    2013-02-01

    The development of silicon photomultipliers (SiPMs) with a large number of APD cells and improved linearity of the pulse height response prompted interest in their application to gamma spectrometry with scintillators. Hamamatsu MPPC sensors equipped with 3600 and 14400 APD cells were chosen in our study because of their well pronounced single photoelectron spectra, which allowed us to precisely measure the photoelectron numbers (PHE) or fired APD cells and then to discuss, in a quantitative manner, the obtainable energy resolution. The studied detectors were first characterized in direct detection of laser light pulses and then in gamma spectroscopy with LFS and CsI:Tl crystals. In the study with the laser light pulses the linearity of the MPPC response versus a light pulse intensity monitored with PMT was measured. Two different methods were used for an evaluation of the MPPC response expressed in the number of photoelectrons (PHE) generated by light illumination. The direct method (PHEdir), based on the comparison of the light peak position to that of the single photoelectron peak, determined the upper limit of the PHE. The lower limit of the PHE was derived from an analysis of the measured pulse height resolution under the assumption of Poisson statistics and MPPC excess noise factor (ENF) of 1. Furthermore, the ENF of the MPPC is discussed with respect to the contributions of device dead time, optical cross-talk and after-pulses to the results obtained. In the scintillation tests, measurements of energy resolution and non-proportionality of the light yield were performed with LFS and CsI:Tl crystals, and both types of 3 × 3 mm MPPC detectors were used for light readout. The results are discussed in a quantitative manner based on the measured PHE.

  7. Performance and emission characteristics of the thermal barrier coated SI engine by adding argon inert gas to intake mixture

    Directory of Open Access Journals (Sweden)

    T. Karthikeya Sharma

    2015-11-01

    Full Text Available Dilution of the intake air of the SI engine with the inert gases is one of the emission control techniques like exhaust gas recirculation, water injection into combustion chamber and cyclic variability, without scarifying power output and/or thermal efficiency (TE. This paper investigates the effects of using argon (Ar gas to mitigate the spark ignition engine intake air to enhance the performance and cut down the emissions mainly nitrogen oxides. The input variables of this study include the compression ratio, stroke length, and engine speed and argon concentration. Output parameters like TE, volumetric efficiency, heat release rates, brake power, exhaust gas temperature and emissions of NOx, CO2 and CO were studied in a thermal barrier coated SI engine, under variable argon concentrations. Results of this study showed that the inclusion of Argon to the input air of the thermal barrier coated SI engine has significantly improved the emission characteristics and engine’s performance within the range studied.

  8. Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

    International Nuclear Information System (INIS)

    We show the operation of a Cu/Al2O3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 ± 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ∼2 × 10−13 A, an ON/OFF ratio of ∼105, and an equivalent subthreshold swing of ∼96 mV/dec at low temperatures, which are suitable values for potential high frequency devices

  9. RBS using {sup 28}Si beams

    Energy Technology Data Exchange (ETDEWEB)

    Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia); Mitchell, I.V. [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1996-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  10. Experimental characterization and Monte Carlo simulation of Si(Li) detector efficiency by radioactive sources and PIXE

    Energy Technology Data Exchange (ETDEWEB)

    Mesradi, M. [Institut Pluridisciplinaire Hubert-Curien, UMR 7178 CNRS/IN2P3 et Universite Louis Pasteur, 23 rue du Loess, BP 28, F-67037 Strasbourg Cedex 2 (France); Elanique, A. [Departement de Physique, FS/BP 8106, Universite Ibn Zohr, Agadir, Maroc (Morocco); Nourreddine, A. [Institut Pluridisciplinaire Hubert-Curien, UMR 7178 CNRS/IN2P3 et Universite Louis Pasteur, 23 rue du Loess, BP 28, F-67037 Strasbourg Cedex 2 (France)], E-mail: abdelmjid.nourreddine@ires.in2p3.fr; Pape, A.; Raiser, D.; Sellam, A. [Institut Pluridisciplinaire Hubert-Curien, UMR 7178 CNRS/IN2P3 et Universite Louis Pasteur, 23 rue du Loess, BP 28, F-67037 Strasbourg Cedex 2 (France)

    2008-06-15

    This work relates to the study and characterization of the response function of an X-ray spectrometry system. The intrinsic efficiency of a Si(Li) detector has been simulated with the Monte Carlo codes MCNP and GEANT4 in the photon energy range of 2.6-59.5 keV. After finding it necessary to take a radiograph of the detector inside its cryostat to learn the correct dimensions, agreement within 10% between the simulations and experimental measurements with several point-like sources and PIXE results was obtained.

  11. Temperature dependence of the inhomogeneous parameters of the Mo/4H–SiC Schottky barrier diodes

    Science.gov (United States)

    Latreche, A.; Ouennoughi, Z.; Weiss, R.

    2016-08-01

    The inhomogeneous parameters of Mo/4H–SiC Schottky barrier diodes were determined from current–voltage (I–V) characteristics in the temperature range of 303–498 K by using a general approach for the real Schottky diode. In this approach the total series resistances is divided into two resistances; the first one (R P) is the sum of the series resistances (r) of the particular diodes connected in parallel and the second is the common resistance (R C) to all particular diodes. The mean barrier height (\\bar{φ }) and the standard deviation (σ) decrease linearly with decreasing temperature and they are between the values for the diodes with the two limiting cases; no current spreading and full current spreading. The series resistance R C increases, while the series resistance R P slightly decreases with decreasing temperature.

  12. Effect of temperature on the carrier transport property of 4H-SiC based Schottky barrier diode

    Directory of Open Access Journals (Sweden)

    TONG Wulin

    2015-08-01

    Full Text Available In this paper,the current-voltage (I-V measurement under different temperatures was carried out on the 4H-SiC Schottky barrier diode (SBD purchased from Cree Inc.The carrier transport mechanism and the temperature effect of SBD were investigated through the theoretical simulation based on the experimental data.The Schottky barrier height is decreased and leakage current is increased sharply for SBD when the temperatures are increased.The SBD forward bias obeys the hot electron emission mechanism.Taking the image force correction and tunneling effect into consideration,the high leakage current under reverse bias can be reasonably explained and is good agreement with the experiment results.

  13. Energy dispersive X-ray fluorescence from useless tyres samples with a Si PIN detector

    International Nuclear Information System (INIS)

    The concentration of Zn from discard tyre samples is of environmental interest, since on its production are used S for the rubber vulcanization process, and Zn O as reaction catalyze. The useless tyres are been used for asphalt pave, burn in cement industry and thermoelectric power plant and in erosion control of agriculture areas. Analyses of these samples requires frequently chemical digestion that is expensive and take a long time. Trying to eliminate these limitations, the objective of this work was use Energy Dispersive X Ray Fluorescence technique (EDXRF) with a portable system as the technique is multi elementary and needs a minimum sample preparation. Five useless tyres samples were grind in a knife mill and after this in a cryogenic mill, and analyzed in pellets form, using a X ray mini tube (Ag target, Mo lter, 25 kV/20 A) for 200 s and a Si-PIN semiconductor detector coupled to a multichannel analyzer. Were obtained Zn concentrations in the range of 40.6 to 44.2 g g1, representing nearly 0.4. (author)

  14. Development of SiPM-based scintillator tile detectors for a multi-layer fast neutron tracker

    OpenAIRE

    Jakubek J.; Uher J.; Prokopovich D.; Preston R.

    2012-01-01

    We are developing thin tile scintillator detectors with silicon photomultiplier (SiPM) readout for use in a multi-layer fast-neutron tracker. The tracker is based on interleaved Timepix and plastic scintillator layers. The thin 15 × 15 × 2 mm plastic scintillators require suitable optical readout in order to detect and measure the energy lost by energetic protons that have been recoiled by fast neutrons. Our first prototype used dual SiPMs, coupled to opposite edges of the scintillator tile u...

  15. Rectifying barrier at GaN/SiC hetero-junction studied with positron annihilation spectroscopy

    Institute of Scientific and Technical Information of China (English)

    Hu Yi-Fan; Beling C D

    2005-01-01

    Positron annihilation spectroscopy on GaN films grown on SiC substrate with MBE are presented. It is shown that the GaN/SiC interface is rectifying towards positrons, such that positrons can only travel from SiC to GaN and not vice versa. Potential steps seen by the positron at the GaN/SiC interface are calculated from experimental values of electron and positron work function. This "rectifying" effect has been successfully mimicked by inserting a thin region of very high electric field in the Variable Energy Positron Fit (VEPF) analysis. The built-in electric field is attributed to different positron affinities, dislocation and/or interface defects at the GaN/SiC interface.

  16. Sub-barrier fusion of /sup 28,30/Si with /sup 58,62,64/Ni

    International Nuclear Information System (INIS)

    Cross sections for evaporation residue formation have been measured for the systems 28,30Si+58,62,64 Ni in the energy range from about 0.9 up to 1.2 times the conventional Coulomb barrier. The fusion cross sections cover more than four orders of magnitude from approx.30 μb to approx.500 mb, and show isotopic effects which are interpreted in the frame of the model involving coupling of the entrance channel with positive and negative Q-value reaction channels

  17. Environmental and Mechanical Stability of Environmental Barrier Coated SA Tyrannohex SiC Composites Under Simulated Turbine Engine Environments

    Science.gov (United States)

    Zhu, Dongming; Halbig, Michael Charles; Sing, Mrityunjay

    2014-01-01

    The environmental stability and thermal gradient cyclic durability performance of SA Tyrannohex composites were investigated for turbine engine component applications. The work has been focused on investigating the combustion rig recession, cyclic thermal stress resistance and thermomechanical low cycle fatigue of uncoated and environmental barrier coated Tyrannohex SiC SA composites in simulated turbine engine combustion water vapor, thermal gradients, and mechanical loading conditions. Flexural strength degradations have been evaluated, and the upper limits of operating temperature conditions for the SA composite material systems are discussed based on the experimental results.

  18. Diffusion barrier properties of atomic-layer-deposited iridium thin films on Cu/Ir/Si structures

    International Nuclear Information System (INIS)

    We investigated the diffusion barrier properties of an atomic-layer-deposited 12-nm-thick iridium (Ir) thin film as functions of the thermal treatment temperature. Up to a temperature of 500 .deg. C, the Ir thin film maintained its initial configuration, preventing the penetration of the Cu layer into Si through the Ir layer. The thermal stability of the Ir layer up to 500 .deg. C was confirmed by using high resolution transmission electron microscopy, Auger electron microscopy, and X-ray diffraction. In contrast, when the Ir layer was thermally annealed at 600 .deg. C, copper silicide was formed, and interdiffusion of Cu and Ir was observed.

  19. Effectiveness of Diffusion Barrier Coatings for Mo-Re Embedded in C/SiC and C/C

    Science.gov (United States)

    Glass, David E.; Shenoy, Ravi N.; Wang, Zeng-Mei; Halbig, Michael C.

    2001-01-01

    Advanced high-temperature cooling applications may often require the elevated-temperature capability of carbon/silicon carbide or carbon/carbon composites in combination with the hermetic capability of metallic tubes. In this paper, the effects of C/SiC and C/C on tubes fabricated from several different refractory metals were evaluated. Though Mo, Nb, and Re were evaluated in the present study, the primary effort was directed toward two alloys of Mo-Re, namely, arc cast Mo-41Re and powder metallurgy Mo-47.5Re. Samples of these refractory metals were subjected to either the PyC/SiC deposition or embedding in C/C. MoSi2(Ge), R512E, and TiB2 coatings were included on several of the samples as potential diffusion barriers. The effects of the processing and thermal exposure on the samples were evaluated by conducting burst tests, microhardness surveys, and scanning electron microscopic examination (using either secondary electron or back scattered electron imaging and energy dispersive spectroscopy). The results showed that a layer of brittle Mo-carbide formed on the substrates of both the uncoated Mo-41Re and the uncoated Mo-47.5Re, subsequent to the C/C or the PyC/SiC processing. Both the R512E and the MoSi2(Ge) coatings were effective in preventing not only the diffusion of C into the Mo-Re substrate, but also the formation of the Mo-carbides. However, none of the coatings were effective at preventing both C and Si diffusion without some degradation of the substrate.

  20. Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

    International Nuclear Information System (INIS)

    We studied the radiation hardness of 4H-SiC Schottky barrier diodes (SBD) for the light ion detection and spectroscopy in harsh radiation environments. n-Type SBD prepared on nitrogen-doped (∼4 × 1014 cm−3) epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanning alpha particle microbeam (2 and 4 MeV He2+ ions separately) in order to create patterned damage structures at different depths within a sensitive volume of tested diodes. Deep Level Transient Spectroscopy (DLTS) analysis revealed the formation of two deep electron traps in the irradiated and not thermally treated 4H-SiC within the ion implantation range (E1 and E2). The E2 state resembles the well-known Z1/2 center, while the E1 state could not be assigned to any particular defect reported in the literature. Ion Beam Induced Charge (IBIC) microscopy with multiple He ion probe microbeams (1–6 MeV) having different penetration depths in tested partly damaged 4H-SiC SBD has been used to determine the degradation of the charge collection efficiency (CCE) over a wide fluence range of damaging alpha particle. A non-linear behavior of the CCE decrease and a significant degradation of the spectroscopic performance with increasing He ion fluence were observed above the value of 1011 cm−2

  1. Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

    Energy Technology Data Exchange (ETDEWEB)

    Pastuović, Željko, E-mail: zkp@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Capan, Ivana [Material Physics Division, Institute Rudjer Boskovic, PO Box 180, 10000 Zagreb (Croatia); Cohen, David D. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Forneris, Jacopo [Physics Department and NIS Excellence Centre, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Iwamoto, Naoya; Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Siegele, Rainer [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, NSW 2232 (Australia); Hoshino, Norihiro; Tsuchida, Hidekazu [Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan)

    2015-04-01

    We studied the radiation hardness of 4H-SiC Schottky barrier diodes (SBD) for the light ion detection and spectroscopy in harsh radiation environments. n-Type SBD prepared on nitrogen-doped (∼4 × 10{sup 14} cm{sup −3}) epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanning alpha particle microbeam (2 and 4 MeV He{sup 2+} ions separately) in order to create patterned damage structures at different depths within a sensitive volume of tested diodes. Deep Level Transient Spectroscopy (DLTS) analysis revealed the formation of two deep electron traps in the irradiated and not thermally treated 4H-SiC within the ion implantation range (E1 and E2). The E2 state resembles the well-known Z{sub 1/2} center, while the E1 state could not be assigned to any particular defect reported in the literature. Ion Beam Induced Charge (IBIC) microscopy with multiple He ion probe microbeams (1–6 MeV) having different penetration depths in tested partly damaged 4H-SiC SBD has been used to determine the degradation of the charge collection efficiency (CCE) over a wide fluence range of damaging alpha particle. A non-linear behavior of the CCE decrease and a significant degradation of the spectroscopic performance with increasing He ion fluence were observed above the value of 10{sup 11} cm{sup −2}.

  2. Ta–Rh binary alloys as a potential diffusion barrier between Cu and Si: Stability and failure mechanism of the Ta–Rh amorphous structures

    International Nuclear Information System (INIS)

    Thermodynamic calculations were carried out to derive the Gibbs free energy diagram for the amorphous and crystalline phases in the Ta–Rh system. These calculations predicted that the compositional range for the amorphous Ta–Rh phase was within 37–66 at.% Ta, which was validated by X-ray diffraction (XRD) analysis, high-resolution transmission electron microscopy (HRTEM) observations and resistivity measurements of as-deposited films. The thermodynamic modeling provided a valuable guide for selecting an amorphous composition suitable for diffusion barrier applications. The stability and metallurgical failure mechanism for TaRhx diffusion barriers in contact with Cu and/or Si were investigated by resistivity measurements, XRD analysis and detailed electron microscopy on samples annealed in 5% H2/95% N2 gas for 30 min at various temperatures. Amorphous TaRhx in contact with the Si substrate was stable up to 700 °C, whereupon TaRhx decomposed and reacted to form TaSi2 and RhSi. Si/amorphousTaRhx (13 nm)/Cu stacks, on the other hand, were stable only up to 550 °C. Failure occurred by reaction of Rh with the Si substrate to form RhSi at the interface. The large density of defects formed in the barrier layer as a result of outward diffusion of Rh facilitated diffusion of Cu to the Si/TaRhx interface to form Cu3Si particles. The formation of Cu3Si was observed to trigger further silicidation of the barrier to form a discontinuous TaSi2 layer

  3. The effect of interface phonons on operating electron states in three-barrier resonant tunneling structure as an active region of quantum cascade detector

    OpenAIRE

    M.V. Tkach; Ju.O. Seti; Grynyshyn, Y. B.; O.M. Voitsekhivska

    2014-01-01

    The Hamiltonian of electrons interacting with interface phonons in three-barrier resonant tunneling structure is established using the first principles within the models of effective mass and polarization continuum. Using the Green's functions method, the temperature shifts and decay rates of operating electron states are calculated depending on geometric design of three-barrier nano-structure GaAs/AlxGa1-xAs which is an active region of quantum cascade detector. It is established that indepe...

  4. Development of novel on-chip, customer-design spiral biasing adaptor on for Si drift detectors and detector arrays for X-ray and nuclear physics experiments

    International Nuclear Information System (INIS)

    A novel on-chip, customer-design spiral biasing adaptor (SBA) has been developed. A single SBA is used for biasing a Si drift detector (SDD) and SDD array. The use of an SBA reduces the biasing current. This paper shows the calculation of the geometry of an SBA and an SDD to get the best drift field in the SDD and SDD array. Prototype SBAs have been fabricated to verify the concept. Electrical measurements on these SBAs are in agreement with the expectations. The new SDD array with an SBA can be used for X-ray detection and in nuclear physics experiments

  5. High performance detector head for PET and PET/MR with continuous crystals and SiPMs

    Energy Technology Data Exchange (ETDEWEB)

    Llosá, G., E-mail: gabriela.llosa@ific.uv.es [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); Barrillon, P. [Laboratoire de L' Accélérateur Linéaire (LAL), Orsay (France); Barrio, J. [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); Bisogni, M.G. [Dipartimento di Fisica “E. Fermi”, Università di Pisa and INFN Pisa, Pisa (Italy); Cabello, J. [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); Del Guerra, A. [Dipartimento di Fisica “E. Fermi”, Università di Pisa and INFN Pisa, Pisa (Italy); Etxebeste, A.; Gillam, J.E.; Lacasta, C.; Oliver, J.F. [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); Rafecas, M. [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); Departamento de Física Atómica, Molecular y Nuclear, Universitat de València, Valencia (Spain); Solaz, C.; Stankova, V. [Instituto de Física Corpuscular, Universitat de València/CSIC, Valencia (Spain); La Taille, C. de [Laboratoire de L' Accélérateur Linéaire (LAL), Orsay (France)

    2013-02-21

    A high resolution PET detector head for small animal PET applications has been developed. The detector is composed of a 12mm×12mm continuous LYSO crystal coupled to a 64-channel monolithic SiPM matrix from FBK-irst. Crystal thicknesses of 5 mm and 10 mm have been tested, both yielding an intrinsic spatial resolution around 0.7 mm FWHM with a position determination algorithm that can also provide depth-of-interaction information. The detectors have been tested in a rotating system that makes it possible to acquire tomographic data and reconstruct images of {sup 22}Na sources. An image reconstruction method specifically adapted for continuous crystals has been employed. The Full Width at Half Maximum measured from a point source reconstructed with ML–EM was 0.7 mm with the 5 mm crystal and 0.8 mm with the 10 mm crystal.

  6. Potential of Cat-CVD deposited a-SiC:H as diffusion barrier layer on low-k HSQ films for ULSI

    International Nuclear Information System (INIS)

    Cu diffusion in the spin-on hydrogen silsesquioxane (HSQ) is a major obstacle in the low-k plus Cu technology for future ULSI devices. We have optimized the process conditions for the spin-on HSQ low-k films. Subsequent metallization with Al and Cu shows a higher leakage current for Cu contact. We have employed Cat-CVD to deposit a-SiC:H films of different thickness on HSQ and studied their effect on the leakage current with both Al and Cu electrodes. The films were deposited using silane (SiH4) and acetylene (C2H2) gases. Also, an independent determination of the dielectric constant of the Cat-CVD a-SiC:H layer has been carried out from the C-V measurements on Al/c-Si/a-SiC:H/Al structure. The electrical characteristics of the Al/c-Si/HSQ + a-SiC:H/Cu structures show almost two orders of magnitude lower leakage current compared with Al/c-Si/HSQ/Cu, indicating very good barrier properties of the a-SiC:H material. Moreover, the low dielectric value observed for a-SiC:H compares favorably to other diffusion barrier materials

  7. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

    Science.gov (United States)

    Zheng, Liu; Zhang, Feng; Liu, Sheng-Bei; Dong, Lin; Liu, Xing-Fang; Fan, Zhong-Chao; Liu, Bin; Yan, Guo-Guo; Wang, Lei; Zhao, Wan-Shun; Sun, Guo-Sheng; He, Zhi; Yang, Fu-Hua

    2013-09-01

    4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm2 with a total active area of 2.46 × 10-3 cm2. Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.

  8. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors

    International Nuclear Information System (INIS)

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images. (paper)

  9. Development of SiPM-based scintillator tile detectors for a multi-layer fast neutron tracker

    Directory of Open Access Journals (Sweden)

    Jakubek J.

    2012-10-01

    Full Text Available We are developing thin tile scintillator detectors with silicon photomultiplier (SiPM readout for use in a multi-layer fast-neutron tracker. The tracker is based on interleaved Timepix and plastic scintillator layers. The thin 15 × 15 × 2 mm plastic scintillators require suitable optical readout in order to detect and measure the energy lost by energetic protons that have been recoiled by fast neutrons. Our first prototype used dual SiPMs, coupled to opposite edges of the scintillator tile using light-guides. An alternative readout geometry was designed in an effort to increase the fraction of scintillation light detected by the SiPMs. The new prototype uses a larger SiPM array to cover the entire top face of the tile. This paper details the comparative performance of the two prototype designs. A deuterium-tritium (DT fast-neutron source was used to compare the relative light collection efficiency of the two designs. A collimated UV light source was scanned across the detector face to map the uniformity. The new prototype was found to have 9.5 times better light collection efficiency over the original design. Both prototypes exhibit spatial non-uniformity in their response. Methods of correcting this non-uniformity are discussed.

  10. K-edge imaging with the XPAD3 hybrid pixel detector, direct comparison of CdTe and Si sensors

    Science.gov (United States)

    Cassol, F.; Portal, L.; Graber-Bolis, J.; Perez-Ponce, H.; Dupont, M.; Kronland, C.; Boursier, Y.; Blanc, N.; Bompard, F.; Boudet, N.; Buton, C.; Clémens, J. C.; Dawiec, A.; Debarbieux, F.; Delpierre, P.; Hustache, S.; Vigeolas, E.; Morel, C.

    2015-07-01

    We investigate the improvement from the use of high-Z CdTe sensors for pre-clinical K-edge imaging with the hybrid pixel detectors XPAD3. We compare XPAD3 chips bump bonded to Si or CdTe sensors in identical experimental conditions. Image performance for narrow energy bin acquisitions and contrast-to-noise ratios of K-edge images are presented and compared. CdTe sensors achieve signal-to-noise ratios at least three times higher than Si sensors within narrow energy bins, thanks to their much higher detection efficiency. Nevertheless Si sensors provide better contrast-to-noise ratios in K-edge imaging when working at equivalent counting statistics, due to their better estimation of the attenuation coefficient of the contrast agent. Results are compared to simulated data in the case of the XPAD3/Si detector. Good agreement is observed when including charge sharing between pixels, which have a strong impact on contrast-to-noise ratios in K-edge images.

  11. A feasibility study to track cosmic muons using a detector with SiPM devices based on amplitude discrimination

    CERN Document Server

    Stanca, D; Brancus, I; Mitrica, B; Balaceanu, A; Cautisanu, B; Gherghel-Lascu, A; Haungs, A; Mathes, H -J; Rebel, H; Saftoiu, A; Sima, O; Mosu, T

    2016-01-01

    The possibility to build a SiPM-readout muon detector (SiRO), using plastic scintillators with optical fibers as sensitive volume and readout by SiPM photo-diodes, is investigated. SiRO shall be used for tracking cosmic muons based on amplitude discrimination. The detector concept foresees a stack of 6 active layers, grouped in 3 sandwiches for determining the muon trajectories through 3 planes. After investigating the characteristics of the photodiodes, tests have been performed using two detection modules, each being composed from a plastic scintillator sheet, $100 \\times 25 \\times 1\\,$cm$^{3}$, with 12 parallel, equidistant ditches; each ditch filled with an optical fiber of $1.5\\,$mm thickness and always two fibers connected to form a channel. The attenuation of the light response along the optical fiber and across the channels have been tested. The measurements of the incident muons based on the input amplitude discrimination indicate that this procedure is not efficient and therefore not sufficient, as ...

  12. Preparation and characterization of bilayer Ta-Si-N/Ti diffusion barrier layer%Ta-Si-N/Ti双层结构扩散阻挡层的制备与表征

    Institute of Scientific and Technical Information of China (English)

    邓鹏远; 瞿金凤

    2013-01-01

    Ta-Si-N (10nm)/Ti(20nm) bilayer diffusion barrier was grown between n-type (100) silicon wafer and Cu film by RF reactive magnetron sputtering. The Cu/Ta-Si-N/Ti/Si samples were subsequently annealed at different temperatures ranging from 600 to 800℃in N2 gas for 1 h. In order to investigate the thermal stability of the barrier structure after annealing, X-ray diffraction, scanning electron microscopy and 4-point probe technique were performed, respectively. The results reveal that Ta-Si-N film deposited on Ti film is amorphous. In addition, the diffusion of Ti atoms into Si substrate results in TiSi2 which decreases the contact resistance between barrier Si and Ta-Si-N(10nm)/Ti(20nm) bilayer can serve as effective diffusion barriers up to 750℃.%  采用射频磁控溅射的方法在Si(100)衬底和Cu膜间制备了Ta-Si-N(10nm)/Ti(20nm)双层结构的扩散阻挡层。Cu/Ta-Si-N/Ti/Si样品在高纯氮气的保护下从600至800℃退火1小时。通过四探针电阻测试仪(FPP)、SEM、XRD研究了Cu/Ta-Si-N/Ti/Si系统在退火过程中的热稳定性。研究结果表明:沉积到Ti膜上的Ta-Si-N膜为非晶态结构;Cu/Ta-Si-N/Ti/Si样品700℃以上退火后Ti原子扩散到Si中形成的TiSi2能有效地降低Ta-Si-N与Si之间的接触电阻;Ta-Si-N/Ti阻挡层750℃退火后仍能有效地阻止Cu的扩散。

  13. Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy

    International Nuclear Information System (INIS)

    The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using ballistic electron emission microscopy (BEEM) over a period of 21 days to observe changes in the interface electrostatics. Initially, the average spectrum is fit to a Schottky barrier height of 0.71 eV, and the map is uniform with 98% of the spectra able to be fit. After 21 days, the average spectrum is fit to a Schottky barrier height of 0.62 eV, and the spatial map changes dramatically with only 27% of the spectra able to be fit. Transmission electron microscopy shows the formation of an ultra-thin tungsten silicide at the interface, which increases in thickness over the 21 days. This increase is attributed to an increase in electron scattering and the changes are observed in the BEEM measurements. Interestingly, little to no change is observed in the I-V measurements throughout the 21 day period

  14. Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Durcan, Chris A.; Balsano, Robert [College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203 (United States); LaBella, Vincent P., E-mail: vlabella@albany.edu [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12203 (United States)

    2015-06-28

    The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using ballistic electron emission microscopy (BEEM) over a period of 21 days to observe changes in the interface electrostatics. Initially, the average spectrum is fit to a Schottky barrier height of 0.71 eV, and the map is uniform with 98% of the spectra able to be fit. After 21 days, the average spectrum is fit to a Schottky barrier height of 0.62 eV, and the spatial map changes dramatically with only 27% of the spectra able to be fit. Transmission electron microscopy shows the formation of an ultra-thin tungsten silicide at the interface, which increases in thickness over the 21 days. This increase is attributed to an increase in electron scattering and the changes are observed in the BEEM measurements. Interestingly, little to no change is observed in the I-V measurements throughout the 21 day period.

  15. Development of multi-guard ring-equipped p+–n Si microstrip sensors for the SiD detector at the ILC

    International Nuclear Information System (INIS)

    Si sensors in future high-energy physics experiments will encounter an extremely harsh radiation environment. In lepton colliders, the dominant background from electron–positron pairs can be managed with modern Si technology, but there is also a potentially dangerous neutron background. Specifically, the estimated neutron background is around 1–1.6 × 1010 1-MeV equivalent neutrons cm−2 year−1 for the Si microstrip sensors to be used in the innermost vertex detectors of the International Linear Collider (ILC). This causes bulk damage in the Si sensors due to the non-ionization energy loss and is of much greater importance in determining the viability of their long-term operation. For reliable operation, such sensors will need to operate at high reverse biases, far beyond the full depletion voltages, which can lead to the sensor breakdown. Multi-guard ring structures have evolved as a powerful technique to improve the breakdown performance of these sensors. In this work, a comprehensive approach towards the understanding of multi-guard ring structures is followed by simulating several structures with different layouts. The potential and field distributions help in optimizing design parameters

  16. Basic performance evaluation of a Si-PM array-based LGSO phoswich DOI block detector for a high-resolution small animal PET system.

    Science.gov (United States)

    Yamamoto, Seiichi

    2013-07-01

    The silicon photomultiplier (Si-PM) is a promising photodetector for PET. However, it remains unclear whether Si-PM can be used for a depth-of-interaction (DOI) detector based on the decay time differences of the scintillator where pulse shape analysis is used. For clarification, we tested the Hamamatsu 4 × 4 Si-PM array (S11065-025P) combined with scintillators that used different decay times to develop DOI block detectors using the pulse shape analysis. First, Ce-doped Gd(2)SiO(5) (GSO) scintillators of 0.5 mol% Ce were arranged in a 4 × 4 matrix and were optically coupled to the center of each pixel of the Si-PM array for measurement of the energy resolution as well as its gain variations according to the temperature. Then two types of Ce-doped Lu(1.9)Gd(0.1)Si0(5) (LGSO) scintillators, 0.025 mol% Ce (decay time: ~31 ns) and 0.75 mol% Ce (decay time: ~46 ns), were optically coupled in the DOI direction, arranged in a 11 × 7 matrix, and optically coupled to a Si-PM array for testing of the possibility of a high-resolution DOI detector. The energy resolution of the Si-PM array-based GSO block detector was 18 ± 4.4 % FWHM for a Cs-137 gamma source (662 keV). Less than 1 mm crystals were clearly resolved in the position map of the LGSO DOI block detector. The peak-to-valley ratio (P/V) derived from the pulse shape spectra of the LGSO DOI block detector was 2.2. These results confirmed that Si-PM array-based DOI block detectors are promising for high-resolution small animal PET systems. PMID:23271446

  17. Radiation damage effects by electrons, protons, and neutrons in Si/Li/ detectors.

    Science.gov (United States)

    Liu, Y. M.; Coleman, J. A.

    1972-01-01

    The degradation in performance of lithium-compensated silicon nuclear particle detectors induced by irradiation at room temperature with 0.6-MeV and 1.5-MeV electrons, 1.9-MeV protons, and fast neutrons from a plutonium-beryllium source has been investigated. With increasing fluence, the irradiations produced an increase of detector leakage current, noise, capacitance, and a degradation in the performance of the detector as a charged-particle energy spectrometer. Following the irradiations, annealing effects were observed when the detectors were reverse-biased at their recommended operating voltages. Upon removal of bias, a continuous degradation of detector performance characteristics occurred. Detectors which had been damaged by electrons and protons exhibited a stabilization in their characteristics within two weeks after irradiation, whereas detectors damaged by neutrons had a continuous degradation of performance over a period of several months.

  18. Modified-chitosan/siRNA nanoparticles downregulate cellular CDX2 expression and cross the gastric mucus barrier.

    Directory of Open Access Journals (Sweden)

    Ana Sadio

    Full Text Available Development of effective non-viral vectors is of crucial importance in the implementation of RNA interference in clinical routine. The localized delivery of siRNAs to the gastrointestinal mucosa is highly desired but faces specific problems such as the stability in gastric acidity conditions and the presence of the mucus barrier. CDX2 is a transcription factor critical for intestinal differentiation being involved in the initiation and maintenance of gastrointestinal diseases. Specifically, it is the trigger of gastric intestinal metaplasia which is a precursor lesion of gastric cancer. Its expression is also altered in colorectal cancer, where it may constitute a lineage-survival oncogene. Our main objective was to develop a nanoparticle-delivery system of siRNA targeting CDX2 using modified chitosan as a vector. CDX2 expression was assessed in gastric carcinoma cell lines and nanoparticles behaviour in gastrointestinal mucus was tested in mouse explants. We show that imidazole-modified chitosan and trimethylchitosan/siRNA nanoparticles are able to downregulate CDX2 expression and overpass the gastric mucus layer but not colonic mucus. This system might constitute a potential therapeutic approach to treat CDX2-dependent gastric lesions.

  19. Energy dispersive x-ray analysis using a microcalorimeter detector

    International Nuclear Information System (INIS)

    The application of microcalorimeter-based energy dispersive x-ray spectroscopy (EDS) analysis to high-performance integrated circuit (IC) barrier layers for copper metallization is presented. Microcalorimeter EDS analysis of ternary TaSiN films are compared to that carried out using conventional Si(Li) EDS detectors. The elimination of elemental peak overlaps provided by the improved energy resolution of the microcalorimeter-based detector is demonstrated for the TaSiN spectra and is used to examine the efficacy of such an approach for electron microscopy-based compositional analysis of ultra-thin barrier films currently being investigated for giga-scale ICs

  20. Time resolution of time-of-flight detector based on multiple scintillation counters readout by SiPMs

    CERN Document Server

    Cattaneo, P W; Gatti, F; Nishimura, M; Ootani, W; Rossella, M; Shirabe, S; Uchiyama, Y

    2015-01-01

    A new timing detector measuring ~50 MeV/c positrons is under development for the MEG II experiment, aiming at a time resolution $\\sigma_t \\sim 30~\\mathrm{ps}$. The resolution is expected to be achieved by measuring each positron time with multiple counters made of plastic scintillator readout by silicon photomultipliers (SiPMs). The purpose of this work is to demonstrate the time resolution for ~50 MeV/c positrons using prototype counters. Counters with dimensions of $90\\times 40\\times 5~\\mathrm{mm}^3$ readout by three SiPMs at each end were build with SiPMs from Hamamatsu Photonics and AdvanSiD and tested in a positron beam at the DA$\\Phi$NE Beam Test Facility. It was found that the time resolution improves nearly as the square root of the number of counter hits. A time resolution $\\sigma_t=26.2\\pm1.3~\\mathrm{ps}$ was obtained with eight counters with Hamamatsu SiPMs. These results suggest that the design resolution is achievable in the MEG II experiment.

  1. Time resolution of time-of-flight detector based on multiple scintillation counters readout by SiPMs

    Science.gov (United States)

    Cattaneo, P. W.; De Gerone, M.; Gatti, F.; Nishimura, M.; Ootani, W.; Rossella, M.; Shirabe, S.; Uchiyama, Y.

    2016-08-01

    A new timing detector measuring ∼ 50 MeV / c positrons is under development for the MEG II experiment, aiming at a time resolution σt ∼ 30 ps. The resolution is expected to be achieved by measuring each positron time with multiple counters made of plastic scintillator readout by silicon photomultipliers (SiPMs). The purpose of this work is to demonstrate the time resolution for ∼ 50 MeV / c positrons using prototype counters. Counters with dimensions of 90 × 40 × 5mm3 readout by six SiPMs (three on each 40 × 5mm2 plane) were built with SiPMs from Hamamatsu Photonics and AdvanSiD and tested in a positron beam at the DAΦNE Beam Test Facility. The time resolution was found to improve nearly as the square root of the number of counter hits. A time resolution σt = 26.2 ± 1.3 ps was obtained with eight counters with Hamamatsu SiPMs. These results suggest that the design resolution is achievable in the MEG II experiment.

  2. Si and CdTe pixel detector developments at SPring-8

    International Nuclear Information System (INIS)

    Single X-ray photon counting pixel detectors have become the most advanced detector technology in synchrotron radiation experiments recently. In particular, the PILATUS detector based on a silicon sensor has reached a very mature state and represents the world's largest detector in this field. This paper first reports on threshold energy calibrations and the capability of applying an energy-resolved X-ray imaging with PILATUS. Second the design of a cadmium telluride (CdTe) pixel detector is described. A high density and high-atomic number sensor material is required in high energy X-ray applications available at SPring-8. For this purpose we are developing a CdTe pixel detector with the SP8-01 readout ASIC covering a wide dynamic range between 10 and 100 keV and containing lower and upper discriminators.

  3. X-ray photoelectron spectroscopy investigation of the Schottky barrier at low-k a-SiO(C):H/Cu interfaces

    International Nuclear Information System (INIS)

    In order to understand the fundamental mechanisms involved in electrical leakage in low-k/Cu interconnects, we have utilized x-ray photoelectron spectroscopy to determine the Schottky barrier present at interfaces formed by plasma enhanced chemical vapor deposition of low-k a-SiOxCy:H thin films on polished Cu substrates. We find the Schottky Barrier at this interface to range widely from 1 to >4 eV and to be dependent on the amount of network carbon incorporated into the a-SiOC:H thin films.

  4. Estimation of moisture barrier ability of thin SiNx single layer on polymer substrates prepared by Cat-CVD method

    International Nuclear Information System (INIS)

    The SiNx films with the thickness of 50 nm were prepared by Cat-CVD method on the cyclic olefin copolymer (COC) and the polyethylene terephthalate (PET) substrates, and their moisture barrier abilities were evaluated. MOCON measurement method and Ca degradation test showed the moisture permeation results of 0.02 g/(m2 day) for PET substrate and 0.006 g/(m2 day) for COC substrate after SiNx deposition. Applying the simple model of gas barrier property, it was estimated that the Cat-CVD method achieves the high coverage ratio of over 99% for SiNx film on these substrates, and the moisture permeation rate of single SiNx film with the thickness of 50 nm was estimated to be 0.0045 g/(m2 day)

  5. A new fission-fragment detector to complement the CACTUS-SiRi setup at the Oslo Cyclotron Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Tornyi, T.G., E-mail: tornyitom@atomki.hu [Department of Physics, University of Oslo (Norway); Institute of Nuclear Research of the Hungarian Academy of Sciences (MTA Atomki), Debrecen (Hungary); Görgen, A.; Guttormsen, M.; Larsen, A.C.; Siem, S. [Department of Physics, University of Oslo (Norway); Krasznahorkay, A. [Institute of Nuclear Research of the Hungarian Academy of Sciences (MTA Atomki), Debrecen (Hungary); Csige, L. [Institute of Nuclear Research of the Hungarian Academy of Sciences (MTA Atomki), Debrecen (Hungary); Max-Planck-Institute for Quantum Optics, D-85748 Garching (Germany)

    2014-02-21

    An array of Parallel Plate Avalanche Counters (PPAC) for the detection of heavy ions has been developed. The new device, NIFF (Nuclear Instrument for Fission Fragments), consists of four individual detectors and covers 60% of 2π. It was designed to be used in conjunction with the SiRi array of ΔE−E silicon telescopes for light charged particles and fits into the CACTUS array of 28 large-volume NaI scintillation detectors at the Oslo Cyclotron Laboratory. The low-pressure gas-filled PPACs are sensitive for the detection of fission fragments, but are insensitive to scattered beam particles of light ions or light-ion ejectiles. The PPAC detectors of NIFF have good time resolution and can be used either to select or to veto fission events in in-beam experiments with light-ion beams and actinide targets. The powerful combination of SiRi, CACTUS, and NIFF provides new research opportunities for the study of nuclear structure and nuclear reactions in the actinide region. The new setup is particularly well suited to study the competition of fission and γ decay as a function of excitation energy.

  6. A new fission-fragment detector to complement the CACTUS-SiRi setup at the Oslo Cyclotron Laboratory

    Science.gov (United States)

    Tornyi, T. G.; Görgen, A.; Guttormsen, M.; Larsen, A. C.; Siem, S.; Krasznahorkay, A.; Csige, L.

    2014-02-01

    An array of Parallel Plate Avalanche Counters (PPAC) for the detection of heavy ions has been developed. The new device, NIFF (Nuclear Instrument for Fission Fragments), consists of four individual detectors and covers 60% of 2π. It was designed to be used in conjunction with the SiRi array of ΔE-E silicon telescopes for light charged particles and fits into the CACTUS array of 28 large-volume NaI scintillation detectors at the Oslo Cyclotron Laboratory. The low-pressure gas-filled PPACs are sensitive for the detection of fission fragments, but are insensitive to scattered beam particles of light ions or light-ion ejectiles. The PPAC detectors of NIFF have good time resolution and can be used either to select or to veto fission events in in-beam experiments with light-ion beams and actinide targets. The powerful combination of SiRi, CACTUS, and NIFF provides new research opportunities for the study of nuclear structure and nuclear reactions in the actinide region. The new setup is particularly well suited to study the competition of fission and γ decay as a function of excitation energy.

  7. A new fission-fragment detector to complement the CACTUS-SiRi setup at the Oslo Cyclotron Laboratory

    International Nuclear Information System (INIS)

    An array of Parallel Plate Avalanche Counters (PPAC) for the detection of heavy ions has been developed. The new device, NIFF (Nuclear Instrument for Fission Fragments), consists of four individual detectors and covers 60% of 2π. It was designed to be used in conjunction with the SiRi array of ΔE−E silicon telescopes for light charged particles and fits into the CACTUS array of 28 large-volume NaI scintillation detectors at the Oslo Cyclotron Laboratory. The low-pressure gas-filled PPACs are sensitive for the detection of fission fragments, but are insensitive to scattered beam particles of light ions or light-ion ejectiles. The PPAC detectors of NIFF have good time resolution and can be used either to select or to veto fission events in in-beam experiments with light-ion beams and actinide targets. The powerful combination of SiRi, CACTUS, and NIFF provides new research opportunities for the study of nuclear structure and nuclear reactions in the actinide region. The new setup is particularly well suited to study the competition of fission and γ decay as a function of excitation energy

  8. A new fission-fragment detector to complement the CACTUS-SiRi setup at the Oslo Cyclotron Laboratory

    CERN Document Server

    Tornyi, Tamás Gábor; Guttormsen, Magne; Larsen, Ann-Cecilie; Siem, Sunniva; Krasznahorkay, Attila; Csige, Lóránt

    2013-01-01

    An array of Parallel Plate Avalanche Counters (PPAC) for the detection of heavy ions has been developed. The new device, NIFF (Nuclear Instrument for Fission Fragments), consists of four individual detectors and covers $60\\%$ of 2$\\pi$. It was designed to be used in conjunction with the SiRi array of ${\\Delta}E-E$ silicon telescopes for light charged particles and fits into the CACTUS array of 28 large-volume NaI scintillation detectors at the Oslo Cyclotron Laboratory. The low-pressure gas-filled PPACs are sensitive for the detection of fission fragments, but are insensitive to scattered beam particles of light ions or light-ion ejectiles. The PPAC detectors of NIFF have good time resolution and can be used either to select or to veto fission events in in-beam experiments with light-ion beams and actinide targets. The powerful combination of SiRi, CACTUS, and NIFF provides new research opportunities for the study of nuclear structure and nuclear reactions in the actinide region. The new setup is particularly...

  9. Investigation on Coating Uniformity of High-Temperature Alloy with SiC Thermal Barrier Coating Using Pulsed Infrared Thermographic Technique

    Science.gov (United States)

    Liu, J. Y.; Tang, Q. J.; Wang, Y.; Gong, J. L.; Qin, L.

    2015-06-01

    The SiC thermal barrier coating thickness uniformity of a high-temperature alloy was investigated using a pulsed infrared thermographic image. A thermal quadrupole method is used to solve a one-dimensional thermal conduction model. The temperature of the high-temperature alloy with SiC coating is directly affected by the pulse intensity of optical excitation; furthermore, the relation between the SiC thermal barrier coating thickness and temperature difference is obtained. Pulsed phase thermography and principal component analysis are applied to extract the characteristic information from thermal image sequences, and the signal-to-noise ratio of the thermal wave signal is clearly improved. The thermal contrast of the SiC thermal barrier coating thickness is related to the optical pulse intensity and infrared camera frame rate. Furthermore, a relatively simple quantitative method is developed to estimate the SiC thermal barrier coating thickness uniformity of the high-temperature alloy, and the coating thickness measurement using pulsed thermographic imaging is in very good agreement with the actual coating thickness value.

  10. Si(Li)探测器测谱中产生伪峰现象的分析%ANALYZING THE PHENOMENA OF FAKE PEAK PRODUCED IN Si(Li) DETECTOR'S MEASURING SPECTRUM

    Institute of Scientific and Technical Information of China (English)

    张开春; 吴丽萍; 周厚全; 李志勇

    2001-01-01

    The Be window is destroyed by chance during using the Si(Li) detector. After it is repaired, the detector is used to measure characteristic X-ray of following elements of V, Fe, Ni, Cu, Zn and Pb. The concomitent fake peak appears going with the photoelectric peak of above mentioned elements, and the ratio of two peaks' energy is nearly a constant. By experiment test and reason analysis, it is found that the fare peak is resulted from Li ions' contrary diraction drift in Si(Li) detector, which is caused by the suddenly sharp change of outward the degree of vacuum and high voltage.

  11. Influence of low energy argon plasma treatment on the moisture barrier performance of hot wire-CVD grown SiNx multilayers

    OpenAIRE

    Majee, Subimal; Cerqueira, M. F.; Tondelier, Denis; Geffroy, Bernard; Bonnassieux, Yvan; Alpuim, P.; Bourée, Jean Eric

    2014-01-01

    The reliability and stability are key issues for the commercial utilization of organic photovoltaic devices based on flexible polymer substrates. To increase the shelf-lifetime of these devices, transparent moisture barriers of silicon nitride (SiNx) films are deposited at low temperature by hot wire CVD (HW-CVD) process. Instead of the conventional route based on organic/inorganic hybrid structures, this work defines a new route consisting in depositing multilayer stacks of SiNx thin films, ...

  12. Preparation of Al-Cr-Si oxide tritium permeation barrier by double glow plasma technology

    International Nuclear Information System (INIS)

    Al-Cr-Si oxide coatings were prepared on 316L stainless steel by double glow plasma surface alloying technique in order to promote the capability against tritium permeation. Microstructures and compositions of the coatings were studied by scanning electron microscope, transmission electron microscope and X-ray diffraction. Adhesion strength of the oxide coatings was tested by scratch adhesion test and thermal shock test. The results showed that dense and continuous Al2O3 films were formed on the substrate owing to the addition of elements Cr and Si. Besides, the spinel-type composite metal oxide Fe(AlCr)2O4 was formed of Al2O3 and iron/chromic oxide in the outer layer. The coatings prepared at oxygen flow rate of 10 standard cubic centimeter per minute exhibited the best microstructure and mechanical properties with a bonding force of 68 N. No cracks were found in the coatings after thermal shock testing. (authors)

  13. Development Status and Performance Comparisons of Environmental Barrier Coating Systems for SiCSiC Ceramic Matrix Composites

    Science.gov (United States)

    Zhu, Dongming; Harder, Bryan

    2016-01-01

    Environmental barrier coatings (EBC) and SiCSiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft turbine engine systems, because of their ability to significantly increase engine operating temperatures, reduce engine weight and cooling requirements. This paper presents current NASA EBC-CMC development emphases including: the coating composition and processing improvements, laser high heat flux-thermal gradient thermo-mechanical fatigue - environmental testing methodology development, and property evaluations for next generation EBC-CMC systems. EBCs processed with various deposition techniques including Plasma Spray, Electron Beam - Physical Vapor Deposition, and Plasma Spray Physical Vapor Deposition (PS-PVD) will be particularly discussed. The testing results and demonstrations of advanced EBCs-CMCs in complex simulated engine thermal gradient cyclic fatigue, oxidizing-steam and CMAS environments will help provide insights into the coating development strategies to meet long-term engine component durability goals.

  14. Reactive ion etching of Ta--Si--N diffusion barriers in CF4+O2

    International Nuclear Information System (INIS)

    Ta36Si14N50 amorphous layers were reactive ion etched in CF4+O2 plasmas. The etch depth was determined as a function of gas composition, pressure, and cathode power. Adding small amounts of O2 to CF4 increased the etch rates up to approximately 15% O2 concentration, with etch rates then decreasing with further addition of O2. Etch rates increased with both pressure and power. Etching proceeded only after an initial delay time which depended upon gas composition and power. The delay is probably caused by a surface native oxide which must be removed before etching can commence. The presence of a surface oxide was observed from Auger electron spectroscopy intensity depth profile measurements and is estimated to be 2 nm thick. Under optimal conditions, the etch rate of Ta36Si14N50 is about seven times higher than for SiO2, thus providing a high degree of selectivity for integrated circuit processing

  15. Detection sensibility study from a portable EDXRF system with a Si-PIN detector and an X ray tube

    International Nuclear Information System (INIS)

    Energy Dispersive X Ray Fluorescence (EDXRF) technique was used for the sensibility variation study of a Si-PIN detector. For sample excitation a portable mini x ray tube (Ag target, 4W), under different operational conditions was used with the objective of optimize the analytical sensibility for trace elements determinations in environmental samples. The sensibility curves were obtained by standard reference materials irradiation on thin films from MicroMatter Inc. With these curves the concentration of two certified reference materials SRM1832 and SRM1833 were determined for validation purpose. The measurement time was 200s. Were used in the detector Al and Pb collimators. On the end of the X ray tube was used Mo filter. The best results were verified for Al and Pb collimator operating at 25kV and 20μA. (author)

  16. A comparison of XEDS and EELS with the use of conventional beryllium window and windowless Si(Li) detectors

    International Nuclear Information System (INIS)

    The use of electron energy loss spectroscopy (EELS) for light-element identification is now a well-established technique. Although not a new concept, modified Si(Li) detectors with the conventional beryllium window replaced by a ultra-thin aluminum-coated parylene window (UTW), or with the beryllium completely removed for windowless (WL) operation, have now become routinely available. Since both systems can now be easily interfaced to modern analytical electron microscopes (AEMs) it becomes relevant to determine experimentally the relative merits of the two different techniques for light-element identification and subsequent quantification in both simple systems and complex materials problems, such as precipitate identification in multicomponent alloys. In this preliminary study, the authors have systematically studied the relationship between EELS and XEDS (using a WL detector) for elements ranging from lithium through gallium, with the exception of neon and argon, as well as typical problems in precipitate analysis in thermally aged 316 stainless steel specimens

  17. A low cost network of spectrometer radiation detectors based on the ArduSiPM a compact transportable Software/Hardware Data Acquisition system with Arduino DUE

    CERN Document Server

    Bocci, Valerio; Iacoangeli, Francesco; Nuccetelli, Massimo; Recchia, Luigi

    2015-01-01

    The necessity to use Photo Multipliers (PM) as light detector limited in the past the use of crystals in radiation handled device preferring the Geiger approach. The Silicon Photomultipliers (SiPMs) are very small and cheap, solid photon detectors with good dynamic range and single photon detection capability, they are usable to supersede in some application cumbersome and difficult to use Photo Multipliers (PM). A SiPM can be coupled with a scintillator crystal to build efficient, small and solid radiation detector. A cost effective and easily replicable Hardware software module for SiPM detector readout is made using the ArduSiPM solution [1]. The ArduSiPM is an easily battery operable handled device using an Arduino DUE (an open Software/Hardware board) as processor board and a piggy-back custom designed board (ArduSiPM Shield), the Shield contains all the blocks features to monitor, set and acquire the SiPM using internet network.

  18. Superconducting single X-ray photon detector based on W0.8Si0.2

    CERN Document Server

    Zhang, X; Schilling, A

    2016-01-01

    We fabricated a superconducting single X-ray photon detector based on W0.8Si0.2, and we characterized its basic detection performance for keV-photons at different temperatures. The detector has a critical temperature of 4.97 K, and it is able to be operated up to 4.8 K, just below the critical temperature. The detector starts to react to X-ray photons at relatively low bias currents, less than 1% of Ic at T = 1.8 K, and it shows a saturated count rate dependence on bias current at all temperatures, indicating that the optimum internal quantum efficiency can always be reached. Dark counts are negligible up to the highest investigated bias currents (99% of Ic) and operating temperature (4.8 K). The latching effect affects the detector performance at all temperatures due to the fast recovery of the bias current; however, further modifications of the device geometry are expected to reduce the tendency for latching.

  19. Validated simulation for LYSO:Ce scintillator based PET detector modules built on fully digital SiPM arrays

    Science.gov (United States)

    Játékos, B.; Gasparini, L.; Lőrincz, E.; Erdei, G.

    2016-03-01

    In the recent years new digital photon counter devices (also known as silicon photomultipliers, SiPMs) were designed and manufactured to be used specifically in positron emission tomography (PET) scanners. These finely pixelated devices opened new opportunities in PET detector development, hence their application with monolithic scintillator crystals now are of particular interest. We worked out a simulation tool and a corresponding validation method to assist the optimization and characterization of such PET detector modules. During our work we concentrated on the simulation of SPADnet sensors and the LYSO:Ce scintillator material. Validation of our algorithms combines measurements and simulations performed on UV-excited detector modules. In this paper we describe the operation of the simulation method in detail and present the validation scheme for two demonstrative PET detector-like modules: one built of a scintillator with black-painted faces and another with polished faces. By evaluating the results we show that the shape deviation of the average light distributions is lower than 13%, and the pixel count statistics follow Poisson distribution for both measurement and simulation. The calculated total count values have less than 10% deviation from the measured ones.

  20. Validated simulation for LYSO:Ce scintillator based PET detector modules built on fully digital SiPM arrays

    International Nuclear Information System (INIS)

    In the recent years new digital photon counter devices (also known as silicon photomultipliers, SiPMs) were designed and manufactured to be used specifically in positron emission tomography (PET) scanners. These finely pixelated devices opened new opportunities in PET detector development, hence their application with monolithic scintillator crystals now are of particular interest. We worked out a simulation tool and a corresponding validation method to assist the optimization and characterization of such PET detector modules. During our work we concentrated on the simulation of SPADnet sensors and the LYSO:Ce scintillator material. Validation of our algorithms combines measurements and simulations performed on UV-excited detector modules. In this paper we describe the operation of the simulation method in detail and present the validation scheme for two demonstrative PET detector-like modules: one built of a scintillator with black-painted faces and another with polished faces. By evaluating the results we show that the shape deviation of the average light distributions is lower than 13%, and the pixel count statistics follow Poisson distribution for both measurement and simulation. The calculated total count values have less than 10% deviation from the measured ones

  1. A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)

    International Nuclear Information System (INIS)

    New barrier layer, etch stop and hardmask films, including hydrogenated amorphous a-SiCx:H (SiC), a-SiCxOy:H (SiCO), and a-SiCxNy:H (SiCN) films with a dielectric constant (k) approximately 4.3, are produced using the plasma-enhanced chemical vapor deposition technique. The chemical and structural nature, and mechanical properties of these films are characterized using X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and nano-indentation. The leakage current density and breakdown electric field are investigated by a mercury probe on a metal-insulator-semiconductor structure. The properties of the studied films indicate that they are potential candidates as barrier layer, etch stop and hardmask films for the advanced interconnect technology. The SiC film shows a high leakage current density (1.3x10-7 A/cm2 at 1.0 MV/cm) and low breakdown field (1.2 MV/cm at 1.0x10-6 A/cm2). Considering the mechanical and electrical properties requirements of the interconnect process, SiCN might be a good choice, but the N content may result in via poison problem. The low leakage current (1.2x10-9 A/cm2 at 1.0 MV/cm), high breakdown field (3.1 MV/cm at 1.0x10-6 A/cm2), and relative high hardness (5.7 GPa) of the SiCO film indicates a good candidate as a barrier layer, etch stop, or hardmask

  2. Time resolution of time-of-flight detector based on multiple scintillation counters readout by SiPMs

    OpenAIRE

    Cattaneo, P. W.; De Gerone, M.; F. Gatti; Nishimura, M.; Ootani, W.; Rossella, M.; Shirabe, S.; Uchiyama, Y.

    2015-01-01

    A new timing detector measuring ~50 MeV/c positrons is under development for the MEG II experiment, aiming at a time resolution $\\sigma_t \\sim 30~\\mathrm{ps}$. The resolution is expected to be achieved by measuring each positron time with multiple counters made of plastic scintillator readout by silicon photomultipliers (SiPMs). The purpose of this work is to demonstrate the time resolution for ~50 MeV/c positrons using prototype counters. Counters with dimensions of $90\\times 40\\times 5~\\mat...

  3. Time resolution below 100 ps for the SciTil detector of PANDA employing SiPM

    CERN Document Server

    Brunner, S E; Marton, J; Orth, H; Suzuki, K

    2013-01-01

    The barrel time-of-flight (TOF) detector for the PANDA experiment at FAIR in Darmstadt is planned as a scintillator tile hodoscope (SciTil) using 8000 small scintillator tiles. It will provide fast event timing for a software trigger in the otherwise trigger-less data acquisition scheme of PANDA, relative timing in a multiple track event topology as well as additional particle identification in the low momentum region. The goal is to achieve a time resolution of sigma ~ 100 ps. We have conducted measurements using organic scintillators coupled to Silicon Photomultipliers (SiPM). The results are encouraging such that we are confident to reach the required time resolution.

  4. Impact of temperature increments on tunneling barrier height and effective electron mass for plasma nitrided thin SiO2 layer on a large wafer area

    International Nuclear Information System (INIS)

    Thermally grown SiO2 layers were treated by a plasma nitridation process realized in a vertical furnace. The combination of a pulsed-low frequency plasma and a microwave remote plasma with N2/NH3/He feed gas mixture was used to nitride the thermally grown SiO2 gate dielectrics of MIS structures. Temperature dependency of effective masses and the barrier heights for electrons in pure thermally grown SiO2 as well as plasma nitrided SiO2 in high electric field by means of Fowler-Nordheim regime was determined. It is frequently seen from the literature that either effective electron mass or barrier height (generally effective electron mass) is assumed to be a constant and, as a result, the second parameter is calculated under the chosen assumption. However, in contrast to general attitude of previous studies, this work does not make any such assumptions for the calculation of neither of these two important parameters of an oxide at temperature ranges from 23 to 110 deg. C for SiO2, and 23 to 130 deg. C for nitrided oxide. It is also shown here that both parameters are affected from the temperature changes; respectively, the barrier height decreases while the effective mass increases as a result of elevated temperature in both pure SiO2 and plasma nitrided SiO2. Therefore, one parameter could be miscalculated if the other parameter, i.e., effective mass of electron, was assumed to be a constant with respect to variable physical conditions like changing temperature. Additionally, the barrier heights were calculated just by taking constant effective masses for both types of oxides to be able to compare our results to common literature values.

  5. Emission reduction in SI engine using ethanol – gasoline blends on thermal barrier coated pistons

    OpenAIRE

    C.Ananda Srinivasan and C.G.Saravanan

    2010-01-01

    In this study, the effects of ethanol and unleaded gasoline with Isoheptanol blends on multi- cylinder SI engine were investigated. The test fuels were prepared using 99.9% pure ethanol and unleaded gasoline with Isoheptanol blend, in the ratio of E 60 + 2.0 Isoheptanol, E 50 + 1.0 Isoheptanol. In this work the performance, emission and combustion tests were conducted in multi-cylinder petrol engine. The experimental results reveal an increase in brake thermal efficiency on the use of test fu...

  6. Large area Si low-temperature light detectors with Neganov-Luke effect

    CERN Document Server

    Biassoni, M; Capelli, S; Cassina, L; Clemenza, M; Cremonesi, O; Faverzani, M; Ferri, E; Giachero, A; Gironi, L; Giordano, C; Gotti, C; Maino, M; Margesin, B; Nucciotti, A; Pavan, M; Pessina, G; Previtali, E; Puiu, A; Sisti, M; Terranova, F

    2015-01-01

    Next generation calorimetric experiments for the search of rare events rely on the detection of tiny amounts of light (of the order of 20 optical photons) to discriminate and reduce background sources and improve sensitivity. Calorimetric detectors are the simplest solution for photon detection at cryogenic (mK) temperatures. The development of silicon based light detectors with enhanced performance thanks to the use of the Neganov-Luke effect is described. The aim of this research line is the production of high performance detectors with industrial-grade reproducibility and reliability.

  7. Large area Si low-temperature light detectors with Neganov-Luke effect

    International Nuclear Information System (INIS)

    Next generation calorimetric experiments for the search of rare events rely on the detection of tiny amounts of light (of the order of 20 optical photons) to discriminate and reduce background sources and improve sensitivity. Calorimetric detectors are the simplest solution for photon detection at cryogenic (mK) temperatures. The development of silicon based light detectors with enhanced performance thanks to the use of the Neganov-Luke effect is described. The aim of this research line is the production of high performance detectors with industrial-grade reproducibility and reliability. (orig.)

  8. Fixed pattern deviations in Si pixel detectors measured using the Medipix 1 readout chip

    CERN Document Server

    Tlustos, L; Davidson, D; Heijne, Erik H M; Mikulec, B

    2003-01-01

    Dopant fluctuations and other defects in silicon wafers can lead to systematic errors in several parameters in particle or single-photon detection. In imaging applications non-uniformities in sensors or readout give rise to fixed pattern image noise and degradation of achievable spatial resolution for a given flux. High granularity pixel detectors offer the possibility to investigate local properties of the detector material on a microscopic scale. In this paper, we study fixed pattern detection fluctuations and detector inhomogeneities using the Medipix 1 readout chip. Low-frequency fixed pattern signal deviations due to dopant inhomogeneities can be separated from high-frequency deviations.

  9. Monolithic scintillators and SiPMs in time-of-flight PET detectors

    OpenAIRE

    Dam, H T van

    2012-01-01

    Positron emission tomography (PET) is one of the key medical imaging modalities in the diagnosis and staging of e.g. cancer and cardiovascular diseases. The image formation is based on the measurement of annihilation photon pairs in the detector ring of the PET scanner. The diagnostic value of a PET image depends crucially on the image quality, which to a large extent is determined by the performance of the PET detectors. Therefore, we have investigated a novel detector concept based on a mon...

  10. Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration

    Energy Technology Data Exchange (ETDEWEB)

    Jiao, Guohua [Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences, Shenzhen (China); The Chinese University of Hong Kong, Shatin, Hong Kong (China); Liu, Bo [Sichuan University, Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Chengdu (China); Li, Qiran [CNRS-Universite Paris Sud UMR 8622, Institut d' Electronique Fondamentale, Orsay (France)

    2015-08-15

    Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/p-SiOC:H/Si, even annealing up to 500 C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 C, indicating its potential application in the advanced barrierless Cu metallization. (orig.)

  11. Key Durability Issues with Mullite-Based Environmental Barrier Coatings for Si-Based Ceramics

    Science.gov (United States)

    Lee, Kang N.

    2000-01-01

    Plasma-sprayed mullite (3Al2O3.2SiO2) and mullite/yttria-stabilized-zirconia (YSZ) dual layer coatings have been developed to protect silicon -based ceramics from environmental attack. Mullite-based coating systems show excellent durability in air. However, in combustion environments, corrosive species such as molten salt or water vapor penetrate through cracks in the coating and attack the Si-based ceramics along the interface. Thus the modification of the coating system for enhanced crack-resistance is necessary for long-term durability in combustion environments. Other key durability issues include interfacial contamination and coating/substrate bonding. Interfacial contamination leads to enhanced oxidation and interfacial pore formation, while a weak coating/substrate bonding leads to rapid attack of the interface by corrosive species, both of which can cause a premature failure of the coating. Interfacial contamination can be minimized by limiting impurities in coating and substrate materials. The interface may be modified to improve the coating/substrate bond.

  12. Comparative testing of transmission Si detectors with an 40Ar beam (33 MeV/A)

    International Nuclear Information System (INIS)

    Seven available current fabrication detectors, which are 300 μm thick, have been tested in the reaction chamber ''Cyrano'', the detected particles are Argon 40 ions (33 MeV/A), elastically scattered on a natural lead target

  13. Direct conversion Si and CdZnTe detectors for digital mammography

    CERN Document Server

    Yin Shi Shi; Maeding, D; Mainprize, J; Mawdsley, G; Yaffe, M J; Gordon, E E; Hamilton, W J

    2000-01-01

    Hybrid pixel detector arrays that convert X-rays directly into charge signals are under development at NOVA for application to digital mammography. This technology also has wide application possibilities in other fields of radiology or in industrial imaging, nondestructive evaluation (NDE) and nondestructive inspection (NDI). These detectors have potentially superior properties compared to either emulsion-based film-screen systems which has nonlinear response to X-rays, or phosphor-based detectors in which there is an intermediate step of X-ray to light photon conversion (Feig and Yaffe, Radiol. Clinics North America 33 (1995) 1205-1230). Potential advantages of direct conversion detectors are high quantum efficiencies (QE) of 98% or higher (for 0.3 mm thick CdZnTe detector with 20 keV X-rays), improved contrast, high sensitivity and low intrinsic noise. These factors are expected to contribute to high detective quantum efficiency (DQE). The prototype hybrid pixel detector developed has 50x50 mu m pixel size,...

  14. Super H2O-barrier film using Cat-CVD (HWCVD)-grown SiCN for film-based electronics

    International Nuclear Information System (INIS)

    'Super H2O-barrier film' with a water vapor transmission rate (WVTR) less than 1 mg/m2/day has been developed. The barrier layer is a single layer of amorphous SiCN grown by organic Cat-CVD (O-Cat-CVD) with a thickness of 100 nm. SiCN has been grown by using a gas mixture of monomethylsilane (MMS; Si (CH3)H3), NH3 and H2 on polyethylene-naphthalate (PEN) film substrates. It has been found that the WVTR drastically depends on the W-filament temperature of O-Cat-CVD. The WVTR changed from 5 x 10-1 to 1 x 10-3, corresponding to the W-filament temperature increase from 1100 to 1200 C. We have recently succeeded in developing the 'super H2O-barrier film' by the coating of single layers of SiCN for both sides of the PEN film without using the widely used polymer/inorganic multilayer coating. The both-side coating has been found to be crucial to avoid the H2O penetration into PEN films and also to avoid the breakdown of the SiCN/PEN interface caused by the H2O accumulation at the interface.

  15. Planar electron-tunneling Si/Si0.7Ge0.3 triple-barrier resonant tunneling diode formed on undoped strain-relaxed buffer with flat surface

    Science.gov (United States)

    Okubo, Takafumi; Tsukamoto, Takahiro; Suda, Yoshiyuki

    2014-03-01

    We demonstrated a planar electron-tunneling Si/Si0.7Ge0.3 triple-barrier (TB) resonant tunneling diode (RTD) formed via a channel layer on an undoped strain-relaxed quadruple-Si1-xGex-layer (QL) buffer. Compared with a conventional vertical Si/Si0.7Ge0.3 TB RTD formed on a heavily doped QL buffer, the dislocation density is low, the surface is flat, and the resonance current density is much larger. These observations, together with analyses of current-voltage (I-V) curve fitting to the physics-based analytical expression, suggest that the enhanced I-V characteristics in the planar RTD are related to decreases in the number of crystalline defect states and the structural and potential fluctuations.

  16. The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

    CERN Document Server

    Watanabe, Shin; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin'ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Astushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Ohta, Masayuki; Onishi, Mitsunobu; Saito, Shinya; Sato, Goro; Sato, Tamotsu; Takahashi, Tadayuki; Tanaka, Takaaki; Togo, Atsushi; Tomizuka, Shinji

    2015-01-01

    The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60--600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm x 12 cm x 12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and ...

  17. Effect of SiO{sub 2} coating in bolometric Ge light detectors for rare event searches

    Energy Technology Data Exchange (ETDEWEB)

    Beeman, J.W. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Gentils, A. [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Giuliani, A., E-mail: andrea.giuliani@csnsm.in2p3.fr [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Mancuso, M. [Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Pessina, G. [Università di Milano-Bicocca, Dipartimento di Fisica, and INFN, Sezione di Milano Bicocca, 20126 Milano (Italy); Plantevin, O. [Centre de Spectrométrie Nuclaire et de Spectrométrie de Masse, CNRS and Université Paris-Sud, F-91405 Orsay (France); Rusconi, C. [Università dell' Insubria, Dipartimento di Scienza e Alta Tecnologia, 22100 Como, Italy, (Italy); INFN, Sezione di Milano Bicocca, 20126 Milano (Italy)

    2013-05-01

    In germanium-based light detectors for scintillating bolometers, a SiO{sub 2} anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25–35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ∼630nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope {sup 82}Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO{sub 2} coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

  18. Electron backscattering on Si(Li) detectors and determination of the transmission curve of a Mini-Orange Spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Guerro, Leonardo, E-mail: leonardo.guerro@unicam.it [Division of Physics, School of Science and Technology, University of Camerino, Camerino (Italy); INFN-Sezione di Perugia (Italy); Blasi, Nives [INFN-Sezione di Milano (Italy); Saltarelli, Alessandro [Division of Physics, School of Science and Technology, University of Camerino, Camerino (Italy); INFN-Sezione di Perugia (Italy)

    2014-03-01

    A detailed electron backscattering analysis in Si(Li) detectors was done in order to evaluate the response function of the Mini-Orange Spectrometer. The analysis was performed via Monte Carlo simulations and by measuring the energy and the angular dependencies without and with the insertion of the Mini-Orange Spectrometer in the detection system, combining data taken with a continuous β{sup −} source ({sup 90}Sr) with those from discrete electron transitions of an electron conversion source ({sup 207}Bi). A simple but accurate method is described to determine the transmission function T(E) of the Mini-Orange. - Highlights: • We analyze electron backscattering in Si(Li) detectors. • We evaluate the response function of a Mini-Orange Spectrometer. • We perform Monte Carlo simulations and measure MOS energy and angular dependencies. • Data are taken with a continuous source combined with a discrete conversion source. • An accurate method is described to determine the transmission of a Mini-Orange.

  19. nBn and pBp infrared detectors with graded barrier layer, graded absorption layer, or chirped strained layer super lattice absorption layer

    Science.gov (United States)

    Gunapala, Sarath D. (Inventor); Ting, David Z. (Inventor); Hill, Cory J. (Inventor); Bandara, Sumith V. (Inventor)

    2010-01-01

    An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed.

  20. Improved germanium well detectors

    International Nuclear Information System (INIS)

    Germanium well detectors with metal surface barrier contact are comparable for general use with conventional germanium coaxial detectors. They offer very high sensitivity, the highest presently available

  1. 1K X 1K Si:As IBC detector arrays for JWST MIRI and other applications

    Science.gov (United States)

    Love, Peter J.; Hoffman, Alan W.; Lum, Nancy A.; Ando, Ken J.; Ritchie, William D.; Therrien, Neil J.; Toth, Andrew G.; Holcombe, Roger S.

    2004-09-01

    1K × 1K Si:As Impurity Band Conduction (IBC) arrays have been developed by Raytheon Vision Systems (RVS) for the James Webb Space Telescope (JWST) Mid-Infrared Instrument (MIRI). The devices are also suitable for other low-background applications. The Si:As IBC detectors respond out to ~28 microns, covering an important mid-IR region beyond the 1-5 micron range covered by the JWST NIRCam and NIRSpec instruments. Due to high terrestrial backgrounds at the longer mid-IR wavelengths, it is very difficult to conduct ground-based observations at these wavelengths. Hence, the MIRI instrument on JWST can provide science not obtainable from the ground. A mid-infrared instrument aboard a cryogenic space telescope can have an enormous impact in resolving key questions in astronomy and cosmology. The greatly reduced thermal backgrounds achievable on a space platform (compared to airborne or ground-based platforms) allow for more sensitive observations of dusty young galaxies at high redshifts, star formation of solar-type stars in the local universe, and formation and evolution of planetary disks and systems. We describe results of the development of a new 1024 × 1024 Si:As IBC array with 25-micron pixels that responds with high quantum efficiency over the wavelength range 5 to 28 microns. The previous generation's largest, most sensitive IR detectors at these wavelengths were the 256 × 256/30-micron pitch Si:As IBC devices built by Raytheon for the SIRTF/IRAC instrument. JWST MIRI detector requirements will be reviewed and some model results for IBC device performance will be presented. The IBC detector architecture will be described and the SB305 Readout Integrated Circuit (ROIC), developed specifically for JWST MIRI, will be discussed. The SB305 ROIC utilizes a PMOS Source Follower per Detector (SFD) input circuit with a well capacity of about 2 × 105 electrons. The read noise is expected to be less than 20 e- rms with Fowler-8 sampling at an operating temperature of 7

  2. Quantum mechanical simulation of hole transport in p-type Si Schottky barrier MOSFETs.

    Science.gov (United States)

    Choi, Wonchul; Shin, Mincheol

    2011-07-01

    A full quantum-mechanical simulation of p-type nanowire Schottky barrier metal oxide silicon field effect transistors (SB-MOSFETs) is performed by solving the three-dimensional Schrödinger and Poisson's equations self-consistently. The non-equilibrium Green's function (NEGF) approach is adopted to treat hole transport, especially quantum tunneling through SB. In this work, p-type nanowire SB-MOSFETs are simulated based on the 3-band k.p method, using the k.p parameters that were tuned by benchmarking against the tight-binding method with sp3s* orbitals. The device shows a strong dependence on the transport direction, due to the orientation-sensitive tunneling effective mass and the confinement energy. With regard to the subthreshold slope, the [110] and [111] oriented devices with long channel show better performance, but they are more vulnerable to the short channel effects than the [100] oriented device. The threshold voltage also shows a greater variation in the [110] and [111] oriented devices with the decrease of the channel length. PMID:22121621

  3. Emission reduction in SI engine using ethanol – gasoline blends on thermal barrier coated pistons

    Directory of Open Access Journals (Sweden)

    C.Ananda Srinivasan and C.G.Saravanan

    2010-07-01

    Full Text Available In this study, the effects of ethanol and unleaded gasoline with Isoheptanol blends on multi- cylinder SI engine were investigated. The test fuels were prepared using 99.9% pure ethanol and unleaded gasoline with Isoheptanol blend, in the ratio of E 60 + 2.0 Isoheptanol, E 50 + 1.0 Isoheptanol. In this work the performance, emission and combustion tests were conducted in multi-cylinder petrol engine. The experimental results reveal an increase in brake thermal efficiency on the use of test fuel. In the emission test, CO is found slightly decreased, while HC increased moderately and CO2 and NOx are appreciably reduced, when compared to the sole fuel. The second part of the investigation is carried out in the same engine with Alumina Titania coated crown of the pistons, to gain more inside improvement of engine performance and in-cylinder pressure for coated pistons. The experiment is repeated along with fuel additives and ethanol blends in the same blended ratio to analyse the performance and combustion characteristics of the engine. The results show marginal increase in brake thermal efficiency and reduction in CO, NOx, HC and CO2 emissions. In this study, combustion analyses are made with the help of AVL combustion analyzer, in which cylinder pressure, heat release rate and cumulative heat release are performed.

  4. Forward-bias operation of Si detectors a way to work in high-radiation environment

    CERN Document Server

    Beattie, L J; Sloan, Terence

    2000-01-01

    Test diodes irradiated by neutrons with fluences up to 10/sup 15/ cm /sup -2/ were successfully operated as particle detectors under forward bias. The charge collection efficiency (CCE) of ~70as reached for minimum ionising particles at relatively low-bias voltages. The more usual reverse bias requires ~10 times larger voltage to give a similar CCE. A decrease in the charge trapping is observed in forward bias operation compared to that under reverse bias. The dark current under forward bias has the usual temperature dependence. This could be used to optimise the operation condition of forward-biased detectors in a real experiment. (23 refs).

  5. Characterization of Si detectors, search for vertex and potentiality of detecting a light charged Higgs boson in the CMS experiment

    International Nuclear Information System (INIS)

    The CMS (compact muon solenoid) detector that will be set on the future LHC (large hadron collider) accelerator will enable us to continue our search for the Higgs boson as well as to look for any hint for a new physics beyond the standard model. CMS is composed of an efficient muon detector, an electromagnetic calorimeter and of a tracker with high spatial resolution, this tracker is the topic of this thesis. The tracker will allow an accurate reconstruction of charged-particles trajectories and the reconstruction of the primary interaction vertex. The tracker's technology is based on micro-strip Si detectors, tests performed with the SPS particle beam show that these detectors have an impact reconstruction efficiency greater than 98% and a piling-up rate limited to 6%. The spatial resolution concerning particle trajectories is about 45 μm for an interval of 183 μm between 2 strips. The simulation for the search for a light charged Higgs boson show that an excess of τντ + bb-bar + qq-bar' events is possible to be observed for any value of tan(β) up to MA = 122 GeV/c2 during the first year of operation and up to 136 GeV/c2 afterwards. With the assumption that this event excess is due to the decay of charged Higgs bosons we can state that the assessment of its mass will be possible till mH = 150 GeV/c2 with an accuracy of 15 GeV/c2. (A.C.)

  6. Results of testing the energy dispersive Si detector with large working area

    Science.gov (United States)

    Gogolev, A. S.; Hampai, D.; Khusainov, A. Kh.; Zhukov, M. P.; Dabagov, S. B.; Potylitsyn, A. P.; Liedl, A.; Polese, C.

    2015-07-01

    In this work the testing results for the spectrometer with a large sensitive area developed for the crystal monitoring station of modern hadron accelerator control systems used for the beam collimation are presented. The investigations were carried out at the XLab Frascati LNF laboratory aiming mostly in studying the detector sensitivity uniformity throughout the sensor area.

  7. Characterization and modeling of neutron induced transient response changes in Si:As IBC detectors

    International Nuclear Information System (INIS)

    The authors have conducted an analysis of the temporal response of an IBC detector in the presence of neutron generated compensating acceptor states under typical operating conditions. In this paper a model is presented which describes the observed transient response changes in the regime dominated by dielectric relaxation

  8. Characterisation of the Si microstrip detectors for the inner tracking system of ALICE

    International Nuclear Information System (INIS)

    The ALICE (A Large Ion Collider Experiment) is dedicated to the study of heavy ion collisions produced in the LHC. Several concentric detectors around the primary vertex contribute to the determination of the particle tracks. The detector system closest to the interaction spot is the ITS (Inner Tracking System). ITS is composed of 6 layers of concentric cylindrical detectors. The SSD (Silicon Strip Detector) is formed by the 2 external layers of ITS. SSD is composed of 1698 frontal detection modules. The design of SSD is largely influenced by the variety of particles produced in heavy ion collisions. These modules are made of a sensitive part in silicon and of its electronic circuit. As soon as the prototype module was validated, a massive production campaign has been launched. The first 4 modules produced have been tested on the basis of an adequate beam testing procedure. The results concerning the spatial resolution, the energy resolution and the signal/background noise ratio, show that these parameters comply to the constraints imposed by the track reconstruction in Alice

  9. Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes

    International Nuclear Information System (INIS)

    ZnO-based heterojunction light emitting diodes (LEDs) with MgZnO barrier layer had been fabricated on the p-Si substrate by metal-organic chemical vapor deposition (MOCVD) technology. The current-voltage (I-V) characteristics exhibited a typical p-n diode behavior. Both ultraviolet (UV) and visible emissions could be detected in the electroluminescence (EL) measurement. The result was compared with the EL spectrum of n-ZnO/p-Si heterojunction LED without MgZnO barrier layer. An improved light extraction efficiency by about 31% was realized owing to the current-blocking effect of MgZnO layer. The result indicated that MgZnO barrier layer can prevent the electrons as expected and realize electron-hole recombination in ZnO layer effectively. - Highlights: → MgZnO is firstly used as the current-blocking layer in ZnO/Si structures. → Inserting MgZnO layer could improve the quality of the upper ZnO layer. → Under forward bias, prominent UV emission around 388 nm is observed. → We obtain a higher output power than n-ZnO/p-Si structure by almost 31%.

  10. Electroless nickel alloy deposition on SiO2 for application as a diffusion barrier and seed layer in 3D copper interconnect technology.

    Science.gov (United States)

    Kim, Tae-Yoo; Son, Hwa-Jin; Lim, Seung-Kyu; Song, Young-Il; Park, Hwa-Sun; Suh, Su-Jeong

    2014-12-01

    Electroless Ni-P films were investigated with the aim of application as barrier and seed layers in 3D interconnect technology. Different shapes of blind-via holes were fabricated with a deep reactive ion etcher and SiO2 formed on these holes as an insulating layer. The surface of the substrate has been made hydrophilic by O2 plasma treatment with 100 W of power for 20 min. Electroless Ni-P films were deposited as both a diffusion barrier and a seed layer for Cu filling process. Prior to plating, substrates were activated in a palladium chloride solution after sensitization in a tin chloride solution with various conditions in order to deposit uniform films in TSV. After the formation of the electroless barrier layer, electro Cu was plated directly on the barrier layer. Ni-P films fabricated in blind-via holes were observed by scanning electron microscope. Energy dispersive spectroscopy line scanning was carried out for evaluating the diffusion barrier properties of the Ni-P films. The electroless Ni-P layer worked well as a Cu diffusion barrier until 300 degrees C. However, Cu ions diffused into barrier layer when the annealing temperature increases over 400 degrees C. PMID:25971093

  11. A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

    International Nuclear Information System (INIS)

    Highlights: ► a-Si thin films as semitransparent phosphorus diffusion barriers for solar cell. ► a-Si thin films on silicon wafers were patterned by the alkaline solution. ► Selective emitter was formed with patterned a-Si as diffusion barrier for solar cell. -- Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Ω/□ were obtained via POCl3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

  12. In-situ fabrication of MoSi2/SiC–Mo2C gradient anti-oxidation coating on Mo substrate and the crucial effect of Mo2C barrier layer at high temperature

    International Nuclear Information System (INIS)

    MoSi2/SiC–Mo2C gradient coating on molybdenum was in situ prepared with pack cementation process by two steps: (1) carburizing with graphite powder to obtain a Mo2C layer on Mo substrate, and (2) siliconizing with Si powder to get a composite MoSi2/SiC layer on the upper part of Mo2C layer. The microstructure and elemental distribution in the coating were investigated with scanning electron microscopy (SEM), backscattered electron (BSE), energy dispersive spectroscopy (EDS), electron probe microanalysis (EPMA) and X-ray diffraction (XRD). Cyclic oxidation tests (at 500 °C, 1200 °C, 1400 °C and 1600 °C) demonstrated excellent oxidation resistance for the gradient composite coating and the mass loss was only 0.23% in 60 min at 1600 °C. XRD, EPMA, thermal dynamic and phase diagram analyses indicated that the Mo2C barrier layer played the key role in slowing down the diffusion of C and Si toward inner Mo substrate at high temperature and principally this contributed to the excellent anti-oxidation for Mo besides the outer MoSi2/SiC composite layer.

  13. High Performance P-Channel Schottky Barrier MOSFETs with Self-Aligned PtSi Source/Drain on Thin Film SOI Substrate

    Institute of Scientific and Technical Information of China (English)

    ZHU Shi-Yang; LI Ming-Fu

    2005-01-01

    @@ P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with PtSi Schottky barrier source/drain, high-k gate dielectric and metal gate electrode were fabricated on a thin p-type silicon-on-insulator (SOI) substrateusing a simplified low temperature process. The device works on a fully-depleted accumulation-mode and hasan excellent electrical performance. It reaches Ion/Ioff ratio of about 107, subthreshold swing of 65mV/decade and saturation drain current of Ids= 8.8μA/μm at |Vg - Vth| = |Vd| = 1 V for devices with the channel length 4.0μm and the equivalent oxide thickness 2.0nm. Compared to the corresponding bulk-Si counterparts, SOI p-SBMOSFETs have smaller off-state current due to reduction of the PtSi/Si contact area.

  14. A Fast Calibration System for SiPM Based Scintillator HCAL Detector

    CERN Document Server

    Polak, I

    2015-01-01

    with mid-range a fixed-intensity light pulse. The full SiPM response function is cross-checked by varying the light intensity from zero to the saturation level. In calibration systems we developed, we concentrate especially on the aspect a high dynamic range of pre...

  15. The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

    International Nuclear Information System (INIS)

    The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60–600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm×12 cm×12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13,312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0–2.0 keV (FWHM) at 60 keV and 1.6–2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype. - Highlights: • The final prototype of the Si/CdTe Compton camera for the ASTRO-H SGD was completed. • The detailed design of the Compton camera is described. • The unprecedented high efficiency and high

  16. Precision measurements of Photon Detection Efficiency for SiPM detectors

    International Nuclear Information System (INIS)

    We present the preliminary results of the characterization of silicon detectors in terms of Photon Detection Efficiency (PDE). The precision measurements are performed at controlled temperature, using a specially suited setup based on a monochromator, an integrating sphere to randomize the incident light and a calibrated reference photodiode. We exploit a measurement technique that we recently devised, based on single photon counting with subtraction of dark noise, and avoiding as much as possible cross-talk and afterpulses. We describe in detail the experimental setups and the techniques utilized to measure the PDE. The achieved results are here discussed in order to establish a methodology capable to give very precise PDE values for solid-state photomultiplier detectors.

  17. Digital signal processing for a thermal neutron detector using ZnS(Ag):6LiF scintillating layers read out with WLS fibers and SiPMs

    Science.gov (United States)

    Mosset, J.-B.; Stoykov, A.; Greuter, U.; Hildebrandt, M.; Schlumpf, N.

    2016-07-01

    We present a digital signal processing system based on a photon counting approach which we developed for a thermal neutron detector consisting of ZnS(Ag):6LiF scintillating layers read out with WLS fibers and SiPMs. Three digital filters have been evaluated: a moving sum, a moving sum after differentiation and a digital CR-RC4 filter. The performances of the detector with these filters are presented. A full analog signal processing using a CR-RC4 filter has been emulated digitally. The detector performance obtained with this analog approach is compared with the one obtained with the best performing digital approach.

  18. Digital signal processing for a thermal neutron detector using ZnS(Ag):6LiF scintillating layers read out with WLS fibers and SiPMs

    CERN Document Server

    Mosset, J -B; Greuter, U; Hildebrandt, M; Schlumpf, N

    2015-01-01

    We present a digital signal processing system based on a photon counting approach which we developed for a thermal neutron detector consisting of ZnS(Ag):6LiF scintillating layers read out with WLS fibers and SiPMs. Three digital filters have been evaluated: a moving sum, a moving sum after differentiation and a digital CR-RC^4 filter. The performances of the detector with these filters are presented. A full analog signal processing using a CR-RC^4 filter has been emulated digitally. The detector performance obtained with this analog approach is compared with the one obtained with the best performing digital approach.

  19. Estimation of power dissipation of a 4H-SiC Schottky barrier diode with a linearly graded doping profile in the drift region

    Directory of Open Access Journals (Sweden)

    Rajneesh Talwar

    2009-09-01

    Full Text Available The aim of this paper is to establish the importance of a linearly graded profile in the drift region of a 4H-SiC Schottky barrier diode (SBD. The power dissipation of the device is found to be considerably lower at any given current density as compared to its value obtained for a uniformly doped drift region. The corresponding values of breakdown voltages obtained are similar to those obtained with uniformly doped wafers of 4H-SiC.

  20. Evaluation of a 256 x 256 Si:As IBC detector array for astronomy

    Science.gov (United States)

    Mckelvey, M. E.; Mcmurray, Robert E., Jr.; Mccreight, C. R.; Forrest, W. J.; Garnett, J. D.; Lum, N.; Asbrock, J.; White, R.; Kelchner, R.; Lum, L.

    1994-01-01

    256 x 256-element IBC Si:As arrays have been evaluated for applications in IR astronomy from space-borne platforms. Basic figures of merit were measured at IR flux levels simulating those expected in space-based astronomical observations. Results include dark current less than 20 e(-)/s, G-eta as high as 3.8, eta/beta of 20%, and read noise below 100 rms(e(-)).

  1. Nanoparticle mediated P-glycoprotein silencing for improved drug delivery across the blood-brain barrier: a siRNA-chitosan approach.

    Directory of Open Access Journals (Sweden)

    Jostein Malmo

    Full Text Available The blood-brain barrier (BBB, composed of tightly organized endothelial cells, limits the availability of drugs to therapeutic targets in the central nervous system. The barrier is maintained by membrane bound efflux pumps efficiently transporting specific xenobiotics back into the blood. The efflux pump P-glycoprotein (P-gp, expressed at high levels in brain endothelial cells, has several drug substrates. Consequently, siRNA mediated silencing of the P-gp gene is one possible strategy how to improve the delivery of drugs to the brain. Herein, we investigated the potential of siRNA-chitosan nanoparticles in silencing P-gp in a BBB model. We show that the transfection of rat brain endothelial cells mediated effective knockdown of P-gp with subsequent decrease in P-gp substrate efflux. This resulted in increased cellular delivery and efficacy of the model drug doxorubicin.

  2. Combined in situ FTIR-spectroscopic and electrochemical analysis of nanopores in ultra-thin SiOx-like plasma polymer barrier films

    Science.gov (United States)

    Liu, C.-N.; Ozkaya, B.; Steves, S.; Awakowicz, P.; Grundmeier, G.

    2013-02-01

    Plasma polymerized SiOx barrier films were investigated by means of in situ spectroscopic and electrochemical methods to correlate the process parameters such as applied substrate bias with the resulting barrier properties. SiOx layers with various hexamethyldisiloxane/oxygen ratio were deposited with and without applied substrate bias. The resulting film morphologies were characterized by means of atomic force microscopy, and the presence of nanopores was analysed by cyclic voltammetry. In order to compare the film density and the presence of nanopore structure, evaluation of interfacial hydroxyl groups was performed by means of discrete polarization modulation Fourier transform infrared reflection-absorption spectroscopy in atmospheres with controlled partial pressures of H2O or D2O. It could be shown that the electrochemical and in situ spectroscopic approach allows for the analysis of nanopores and that a clear correlation of process parameters and film structure can be established.

  3. SiC Schottky Diode Detectors for Measurement of Actinide Concentrations from Alpha Activities in Molten Salt Electrolyte

    International Nuclear Information System (INIS)

    In this project, we have designed a 4H-SiC Schottky diode detector device in order to monitor actinide concentrations in extreme environments, such as present in pyroprocessing of spent fuel. For the first time, we have demonstrated high temperature operation of such a device up to 500 °C in successfully detecting alpha particles. We have used Am-241 as an alpha source for our laboratory experiments. Along with the experiments, we have developed a multiscale model to study the phenomena controlling the device behavior and to be able to predict the device performance. Our multiscale model consists of ab initio modeling to understand defect energetics and their effect on electronic structure and carrier mobility in the material. Further, we have developed the basis for a damage evolution model incorporating the outputs from ab initio model in order to predict respective defect concentrations in the device material. Finally, a fully equipped TCAD-based device model has been developed to study the phenomena controlling the device behavior. Using this model, we have proven our concept that the detector is capable of performing alpha detection in a salt bath with the mixtures of actinides present in a pyroprocessing environment.

  4. SiC Schottky Diode Detectors for Measurement of Actinide Concentrations from Alpha Activities in Molten Salt Electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States); Blue, Thomas [The Ohio State Univ., Columbus, OH (United States)

    2013-01-28

    In this project, we have designed a 4H-SiC Schottky diode detector device in order to monitor actinide concentrations in extreme environments, such as present in pyroprocessing of spent fuel. For the first time, we have demonstrated high temperature operation of such a device up to 500 °C in successfully detecting alpha particles. We have used Am-241 as an alpha source for our laboratory experiments. Along with the experiments, we have developed a multiscale model to study the phenomena controlling the device behavior and to be able to predict the device performance. Our multiscale model consists of ab initio modeling to understand defect energetics and their effect on electronic structure and carrier mobility in the material. Further, we have developed the basis for a damage evolution model incorporating the outputs from ab initio model in order to predict respective defect concentrations in the device material. Finally, a fully equipped TCAD-based device model has been developed to study the phenomena controlling the device behavior. Using this model, we have proven our concept that the detector is capable of performing alpha detection in a salt bath with the mixtures of actinides present in a pyroprocessing environment.

  5. Current Status of High Performance Large Format Si:As IBC Detectors for SOFIA-like Applications

    Science.gov (United States)

    Ennico, Kimberly; Greene, Thomas; McCreight, Craig; McKelvey, Mark; McMurray, Robert, Jr.; Cripe, Jerry; DeVincenzi, D. (Technical Monitor)

    2002-01-01

    Airborne and space telescope astronomical observations in the 5-25 micrometer wavelength region, are critical for understanding the physical conditions, composition, chemistry, and excitation of many environments in the interstellar medium, external galaxies, solar system objects, extra-solar systems, and stars. The scientific impact is particularly unique in the 5-8 micrometer and 14-25 micrometer regions which are inaccessible or poorly observed from ground-based observatories. Large-format area mid-infrared (MIR) detectors sensitive over these wavelengths and operable under moderate backgrounds (greater than 10(circumflex)6 e-/s at R=2000, 10(micrometers)) are essential for efficient large-area survey imaging and for taking moderate resolution spectra over a large spectral range. Both SOFIA and passively cooled Explorer observatories could benefit from this technology. Current first-light SOFIA instruments use small-format MIR FPA's of sizes 128x128 and 256x256, With the collaboration of Raytheon Infrared Operations (RIO), NASA-ARC has been testing the first device of this kind, a combination of 1) the ALADDIN III readout multiplexer, cryo-processed for 6K operation, with 2) SIRTF IRAC-like Sides IBC detector material. designed for higher QE and low dark current. Here we report requirements. design, and initial fabrication and testing of the first 1024x1024 Si:As IBC mid-IR detector array for these conditions. This device has exhibited low dark current, moderate noise levels, and greater than 200,000 electron linear well size at 6K operation. We conclude with suggestions for future device development for optimal performance under moderate background, SOFIA- and low Earth orbit observing conditions.

  6. Development of a front-end analog circuit for multi-channel SiPM readout and performance verification for various PET detector designs

    International Nuclear Information System (INIS)

    Silicon photomultipliers (SiPMs) are outstanding photosensors for the development of compact imaging devices and hybrid imaging systems such as positron emission tomography (PET)/ magnetic resonance (MR) scanners because of their small size and MR compatibility. The wide use of this sensor for various types of scintillation detector modules is being accelerated by recent developments in tileable multichannel SiPM arrays. In this work, we present the development of a front-end readout module for multi-channel SiPMs. This readout module is easily extendable to yield a wider detection area by the use of a resistive charge division network (RCN). We applied this readout module to various PET detectors designed for use in small animal PET/MR, optical fiber PET/MR, and double layer depth of interaction (DOI) PET. The basic characteristics of these detector modules were also investigated. The results demonstrate that the PET block detectors developed using the readout module and tileable multi-channel SiPMs had reasonable performance

  7. Development of a front-end analog circuit for multi-channel SiPM readout and performance verification for various PET detector designs

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Guen Bae; Yoon, Hyun Suk [Department of Nuclear Medicine, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Department of Biomedical Sciences, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Institute of Radiation Medicine, Medical Research Center, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Kwon, Sun Il [Department of Nuclear Medicine, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Interdisciplinary Program in Radiation Applied Life Science, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Institute of Radiation Medicine, Medical Research Center, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Lee, Chan Mi [Department of Nuclear Medicine, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Department of Biomedical Sciences, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Institute of Radiation Medicine, Medical Research Center, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Ito, Mikiko [Department of Nuclear Medicine, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Institute of Radiation Medicine, Medical Research Center, Seoul National University, 103 Daehak-ro, Jongro-gu, Seoul 110-799 (Korea, Republic of); Hong, Seong Jong [Department of Radiological Science, Eulji University, 212 Yangji-dong, Sujeong-gu, Seongnam-si, Gyeonggi-do, 461-713 (Korea, Republic of); and others

    2013-03-01

    Silicon photomultipliers (SiPMs) are outstanding photosensors for the development of compact imaging devices and hybrid imaging systems such as positron emission tomography (PET)/ magnetic resonance (MR) scanners because of their small size and MR compatibility. The wide use of this sensor for various types of scintillation detector modules is being accelerated by recent developments in tileable multichannel SiPM arrays. In this work, we present the development of a front-end readout module for multi-channel SiPMs. This readout module is easily extendable to yield a wider detection area by the use of a resistive charge division network (RCN). We applied this readout module to various PET detectors designed for use in small animal PET/MR, optical fiber PET/MR, and double layer depth of interaction (DOI) PET. The basic characteristics of these detector modules were also investigated. The results demonstrate that the PET block detectors developed using the readout module and tileable multi-channel SiPMs had reasonable performance.

  8. Effect of fluorination on methyl internal rotation barriers: Microwave spectra of cyclopropylfluoromethyl silane (c-C3H5SiHFCH3) and cyclopropyldifluoromethyl silane (c-C3H5SiF2CH3)

    Science.gov (United States)

    Dorris, Rachel E.; Luce, Bailey C.; Stettner, Sarah J.; Peebles, Rebecca A.; Peebles, Sean A.; Bullard, John L.; Bunn, James E.; Guirgis, Gamil A.

    2015-12-01

    Rotational spectra for two conformers of c-C3H5SiHFCH3 (cyclopropylfluoromethyl silane, CFMS) and one conformer of c-C3H5SiF2CH3 (cyclopropyldifluoromethyl silane, CDFMS) have been observed by a combination of chirped-pulse and resonant cavity Fourier-transform microwave spectroscopy in the 7.5-16.5 GHz range. All rotational transitions were doubled by up to several megahertz into A and E states as a result of methyl group internal rotation, and analysis of measured transitions using a combined axis method yielded internal rotation barriers of ca. 6.0 kJ mol-1 for the two conformers of CFMS and ca. 5.2 kJ mol-1 for CDFMS, revealing a systematic decrease in the barrier as fluorine atoms are added to the silicon. Dipole moment information is also available for the CDFMS species.

  9. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  10. Simulation of Si P-i-N diodes for use in a positron emission tomography detector module

    International Nuclear Information System (INIS)

    Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

  11. Comparative study of <111> and <100> crystals and capacitance measurements on Si strip detectors in CMS

    CERN Document Server

    Albergo, S; Azzi, P; Babucci, E; Bacchetta, N; Bader, A J; Bagliesi, G; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Buffini, A; Busoni, S; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Civinini, C; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Marina, R D; Dutta, S; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Fürtjes, A; Giassi, A; Giorgi, M A; Giraldo, A; Glessing, B; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Hrubec, Josef; Huhtinen, M; Kaminski, A; Karimäki, V; Saint-Koenig, M; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; Migliore, E; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Papi, A; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Raducci, V; Raffaelli, F; Raymond, M; Santocchia, A; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Skog, K; Starodumov, Andrei; Stavitski, I; Stefanini, G; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Xie, Z; Li Ya Hong; Watts, S; Wittmer, B

    1999-01-01

    For the construction of the silicon microstrip detectors for the tracker of the CMS experiment, two different substrate choices were investigated: A high-resistivity (6 k Omega cm) substrate with crystal orientation and a low-resistivity (2 k Omega cm) one with crystal orientation. The interstrip and backplane capacitances were measured before and after the exposure to radiation in a range of strip pitches from 60 mu m to 240 mu m and for values of the width-over-pitch ratio between 0.1 and 0.5. (3 refs).

  12. Investigation on the charge collection properties of a 4H-SiC Schottky diode detector

    International Nuclear Information System (INIS)

    We present experimental and theoretical data on the charge collection properties of a 4H-SiC epitaxial Schottky diode exposed to 5.48- and 2.00-MeV alpha particles. Hundred percent Charge Collection Efficiency (CCE) is, in particular, demonstrated for the 2.00-MeV alpha particles at reverse voltages higher than 40 V. By comparing measured CCE values with the outcomes of drift-diffusion simulations, a value of 500 ns is inferred for the hole lifetime within the lowly doped, active layer of virgin samples. The contributions of diffusion and funneling-assisted drift to CCE at low reverse voltages are pointed out

  13. Investigation on the charge collection properties of a 4H-SiC Schottky diode detector

    CERN Document Server

    Verzellesi, G; Nava, F; Canali, C

    2002-01-01

    We present experimental and theoretical data on the charge collection properties of a 4H-SiC epitaxial Schottky diode exposed to 5.48- and 2.00-MeV alpha particles. Hundred percent Charge Collection Efficiency (CCE) is, in particular, demonstrated for the 2.00-MeV alpha particles at reverse voltages higher than 40 V. By comparing measured CCE values with the outcomes of drift-diffusion simulations, a value of 500 ns is inferred for the hole lifetime within the lowly doped, active layer of virgin samples. The contributions of diffusion and funneling-assisted drift to CCE at low reverse voltages are pointed out.

  14. Prototype Si microstrip sensors for the CDF-II ISL detector

    CERN Document Server

    Hara, K; Kanao, K; Kim, S; Ogasawara, M; Ohsugi, T; Shimojima, M; Takikawa, K

    1999-01-01

    Prototype Si microstrip sensors for the CDF-II ISL were fabricated by Hamamatsu Photonics and SEIKO Instruments using 4'' technology. The sensor is AC coupled and double-sided forming a stereo angle of 1.207 degree sign . The strip pitch is 112 mu m on both sides. The main differences between the two manufacturers lie on the technologies of passivation and the structure of coupling capacitors. We describe the design of the sensor and evaluation results of the performance. The evaluations include the total and individual strip currents and interstrip capacitance measured before and after sup 6 sup 0 Co gamma irradiation. (author)

  15. Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

    Science.gov (United States)

    Omotoso, E.; Meyer, W. E.; Auret, F. D.; Diale, M.; Ngoepe, P. N. M.

    2016-01-01

    Irradiation experiments have been carried out on 1.9×1016 cm-3 nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6×1010 to 9.2×1011 cm-2. Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation, respectively. As radiation fluence increases, the ideality factors increased from 1.20 to 1.85 but the Schottky barrier height (SBHI-V) decreased from 1.47 to 1.34 eV. Free carrier concentration, Nd decreased with increasing fluence from 1.7×1016 to 1.1×1016 cm-2 at approximately 0.70 μm depth. The reduction in Nd shows that defects were induced during the irradiation and have effect on compensating the free carrier. The free carrier removal rate was estimated to be 6480±70 cm-1. Alpha-particle irradiation introduced two electron traps (E0.39 and E0.62), with activation energies of 0.39±0.03 eV and 0.62±0.08 eV, respectively. The E0.39 as attribute related to silicon or carbon vacancy, while the E0.62 has the attribute of Z1/Z2.

  16. Effects of deposition conditions on gas-barrier performance of SiOxNy thin films formed via ion-beam-assisted vapor deposition

    International Nuclear Information System (INIS)

    SiOxNy thin films were synthesized via ion-beam-assisted vapor deposition (IVD) where deposition of SiOx was irradiated by nitrogen ions. Firstly, reasonable-cost evaporation materials showing less splashing for the SiOx films were investigated by selecting appropriate sintering condition regimes of Si and SiO2 mixed powders. The SiOxNy thin films on a polyethylene terephtalate film substrate obtained via IVD showed a low oxygen transmission rate (OTR) of less than 1 cm3/m2 day. Effective nitrogen ion irradiation energy per atom was 8 eV/at. or greater, which is consistent with regimes where densification of thin films is reported to occur. Higher N2 partial pressure yielded a lower OTR and a higher nitrogen atomic ratio of the films obtained. It is suggested that the improvement in gas-barrier performance resulted from densification and chemical change of the films due to energy addition and nitrification produced by nitrogen ion-beam irradiation

  17. Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs

    Institute of Scientific and Technical Information of China (English)

    Tang Xiao-Yan; Zhang Yi-Men; Zhang Yu-Ming; Gao Jin-Xia

    2004-01-01

    Between source/drain and gate of SiC Schottky barrier source/drain MOSFET (SiC SBSD-MOSFET), there must be a sidewall as isolation. The width of sidewall strongly affects on the device performance. In this paper the effect of sidewall on the performance of 6H-SiC SBSD-NMOSFET is simulated with the 2D simulator MEDICI. The simulated results show that a sidewall with width less than 0.1μm slightly affects the device performance. However, when the width of sidewall exceeds 0.1μm, the conduction does not occur until the drain voltage is high enough and saturation current sharply decreases. The effect of the sidewall on device performance can be reduced by decreasing the doping concentration in the epitaxial layer.

  18. Comparative study of LiF:Mg,Cu,Na,Si and Li2B4O7:Cu,Ag,P TL detectors

    International Nuclear Information System (INIS)

    Recently, two new types of 'tissue equivalent' thermoluminescent detectors (TLDs) have aroused attention: LiF:Mg,Cu,Na,Si and Li2B4O7:Cu,Ag,P. In this work the characteristics of both detectors were compared with the characteristics of the well-known type LiF:Mg,Ti detector, TLD-100. The following properties were investigated: The glow curve structures, relative sensitivity, batch homogeneity and uniformity, detection threshold, reproducibility of the response, linearity in the wide dose range and fading. Also, the energy dependence for medium and low energy X-rays was determined in the range of mean energies between 33 and 116 keV. The results confirmed 'tissue equivalency' of both new types in the investigated range of photon energies. LiF:Mg,Cu,Na,Si detector has very high sensitivity (∼75 times higher than that of TLD-100) and is convenient for use in a very low range of doses. Li2B4O7:Cu,Ag,P detector shows some improvements in comparison with the previously prepared types of lithium borate. The most important is the five times higher sensitivity than that of TLD-100. This detector is also very promising, especially in medical dosimetry. (authors)

  19. Sputtered a-Si:H thin-film position sensitive detectors

    International Nuclear Information System (INIS)

    This paper reports on three different position sensitive detector (PSD) structures based on rf sputter deposited amorphous silicon. Most of the work reported by other researchers on thin-film PSDs has been based on plasma enhanced chemical vapour deposition p-i-n structures but the structures in this work are based on much simpler fabrication procedures. The results show excellent sensitivities and linearities and work extremely well under unbiased conditions. To assess the wavelength response of the devices they were compared under red and white light beams. The performances under red light were unremarkable while under white they were very good, showing high sensitivities and linearities. The devices work best under unbiased conditions and so are simple to configure for practical applications. The outputs obtained required no amplification. (author)

  20. Processing of n+/p-/p+ strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates

    Science.gov (United States)

    Härkönen, J.; Tuovinen, E.; Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T.; Junkes, A.; Wu, X.; Li, Z.

    2016-08-01

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n+ segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al2O3) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current-voltage and capacitance-voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×1015 neq/cm2 proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  1. Characterisation of SiC photo-detectors for solar UV radiation monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Borchi, E.; Macii, R. [Fondazione Osservatorio Ximeniano, Via Borgo San Lorenzo, 26-50123 Firenze (Italy); Bruzzi, M. [INFN Firenze and Dipartimento di Energetica, Via S. Marta 3-50139 Firenze (Italy); Scaringella, M., E-mail: Scaringella@fi.infn.it [INFN Firenze and Dipartimento di Energetica, Via S. Marta 3-50139 Firenze (Italy)

    2011-12-01

    Silicon carbide has a potential for solar UV radiation monitoring: extremely resistant to UV radiation damage, nearly-blind to visible and infrared radiation and less sensitive to temperature variations than standard radiometric systems. A radiometer composed by three SiC photodiodes has been designed, manufactured and tested under solar radiation. Two photodiodes are equipped with filters in the UVB (280-315 nm) and UVA (315-400 nm) ranges while a third is filtered to match the erythemal action spectrum. UVA, UVB components of the solar radiation as well as UV index (UVI) at the earth's surface have been determined in two site positions in Tuscany, Italy. Data as a function of day-light allowed us to evaluate total optical thickness for UVA and UVB: {tau}{sub UVA}=0.46 and {tau}{sub UVB}=1.8. UVI values measured during the year well compares with computed ones used for weather forecast procedures.

  2. Application of a double-sided silicon-strip detector as a differential pumping barrier for NESR experiments at FAIR

    International Nuclear Information System (INIS)

    The presented work focuses on the development of a differential pumping system using double-sided silicon-strip detectors to separate the ultra-high vacuum of a storage ring from subsequent detectors and outgassing components placed in an auxiliary vacuum. Such a technical concept will give the opportunity to use telescope-like detector systems in an ultra-high vacuum environment, such as a storage ring, without enclosing the entire system in a pocket. Therefore, it will enable the detection of recoil particles with the smallest possible energy due to the use of the innermost strip detector as an active window. Our results prove that such an assembly is feasible without having an effect, within experimental errors, on the performance of the strip detector. Vacuum separation better than six orders of magnitude was achieved with the ultra-high vacuum side reaching down to the 10-10mbar pressure region.

  3. Effects of high-energy ionizing particles on the Si:As mid-infrared detector array on board the AKARI satellite

    CERN Document Server

    Mouri, Akio; Ishihara, Daisuke; Oyabu, Shinki; Yamagishi, Mituyoshi; Mori, Tatuya; Onaka, Takashi; Wada, Takehiko; Kataza, Hirokazu

    2011-01-01

    We evaluate the effects of high-energy ionizing particles on the Si:As impurity band conduction (IBC) mid-infrared detector on board AKARI, the Japanese infrared astronomical satellite. IBC-type detectors are known to be little influenced by ionizing radiation. However we find that the detector is significantly affected by in-orbit ionizing radiation even after spikes induced by ionizing particles are removed. The effects are described as changes mostly in the offset of detector output, but not in the gain. We conclude that the changes in the offset are caused mainly by increase in dark current. We establish a method to correct these ionizing radiation effects. The method is essential to improve the quality and to increase the sky coverage of the AKARI mid-infrared all-sky-survey map.

  4. Thermal performance of a 61-cell Si-drift detector module with thermoelectric cooler

    International Nuclear Information System (INIS)

    In this paper, the static thermal behavior of a 61-cell silicon drift detector module is investigated. The influence of thermal conductivity of the case material on the heat flux inside the module is discussed by 3-D simulations. The use of graphite allows an operation with spatial inhomogenities of ≤1 deg. C in the case parts and leads to a sufficient low sensor temperature level. Experiments with a single-stage thermoelectric cooler and heat sink mounted on top of the module confirm that the temperature of the sensor and electronics as well as the case temperature depend linearly on their power dissipation. A set of equations considering the thermal coupling between sensor and electronics fully describe the dependence of their operating temperatures on sensor and electronics power dissipation, cooling power, and ambient temperature under forced convection. The simulated curves show a very good quantitative agreement with the measured characteristics. At a power dissipation level of 1.25 W, an ambient temperature of 22 deg. C and air velocity of ≥18 cm/s the sensor can be operated down to 13 deg. C and 9 deg. C with a cooling power of 2.8 and 7 W, respectively. Without cooling fan and cooling power the sensor temperature remains below 35 deg. C

  5. The Development of Environmental Barrier Coating Systems for SiC-SiC Ceramic Matrix Composites: Environment Effects on the Creep and Fatigue Resistance

    Science.gov (United States)

    Zhu, Dongming; Ghosn, Louis J.

    2014-01-01

    Topics covered include: Environmental barrier coating system development: needs, challenges and limitations; Advanced environmental barrier coating systems (EBCs) for CMC airfoils and combustors; NASA EBC systems and material system evolutions, Current turbine and combustor EBC coating emphases, Advanced development, processing, testing and modeling, EBC and EBC bond coats: recent advances; Design tool and life prediction of coated CMC components; Advanced CMC-EBC rig demonstrations; Summary and future directions.

  6. The MINDView brain PET detector, feasibility study based on SiPM arrays

    Science.gov (United States)

    González, Antonio J.; Majewski, Stan; Sánchez, Filomeno; Aussenhofer, Sebastian; Aguilar, Albert; Conde, Pablo; Hernández, Liczandro; Vidal, Luis F.; Pani, Roberto; Bettiol, Marco; Fabbri, Andrea; Bert, Julien; Visvikis, Dimitris; Jackson, Carl; Murphy, John; O'Neill, Kevin; Benlloch, Jose M.

    2016-05-01

    The Multimodal Imaging of Neurological Disorders (MINDView) project aims to develop a dedicated brain Positron Emission Tomography (PET) scanner with sufficient resolution and sensitivity to visualize neurotransmitter pathways and their disruptions in mental disorders for diagnosis and follow-up treatment. The PET system should be compact and fully compatible with a Magnetic Resonance Imaging (MRI) device in order to allow its operation as a PET brain insert in a hybrid imaging setup with most MRI scanners. The proposed design will enable the currently-installed MRI base to be easily upgraded to PET/MRI systems. The current design for the PET insert consists of a 3-ring configuration with 20 modules per ring and an axial field of view of ~15 cm and a geometrical aperture of ~33 cm in diameter. When coupled to the new head Radio Frequency (RF) coil, the inner usable diameter of the complete PET-RF coil insert is reduced to 26 cm. Two scintillator configurations have been tested, namely a 3-layer staggered array of LYSO with 1.5 mm pixel size, with 35×35 elements (6 mm thickness each) and a black-painted monolithic LYSO block also covering about 50×50 mm2 active area with 20 mm thickness. Laboratory test results associated with the current MINDView PET module concept are presented in terms of key parameters' optimization, such as spatial and energy resolution, sensitivity and Depth of Interaction (DOI) capability. It was possible to resolve all pixel elements from the three scintillator layers with energy resolutions as good as 10%. The monolithic scintillator showed average detector resolutions varying from 3.5 mm in the entrance layer to better than 1.5 mm near the photosensor, with average energy resolutions of about 17%.

  7. Detector characterization and first coincidence tests of a Compton telescope based on LaBr{sub 3} crystals and SiPMs

    Energy Technology Data Exchange (ETDEWEB)

    Llosa, G., E-mail: gabriela.llosa@ific.uv.es [Instituto de Fisica Corpuscular (IFIC-CSIC/UVEG), Valencia (Spain); Barrio, J.; Cabello, J.; Crespo, A.; Lacasta, C. [Instituto de Fisica Corpuscular (IFIC-CSIC/UVEG), Valencia (Spain); Rafecas, M. [Instituto de Fisica Corpuscular (IFIC-CSIC/UVEG), Valencia (Spain); Departamento de Fisica Atomica, Molecular y Nuclear, Universitat de Valencia, Valencia (Spain); Callier, S.; La Taille, C. de; Raux, L. [Laboratoire de l' Accelerateur Lineaire, Orsay (France)

    2012-12-11

    A Compton telescope for dose monitoring in hadron therapy consisting of several layers of continuous LaBr{sub 3} crystals coupled to silicon photomultiplier (SiPM) arrays is under development within the ENVISION project. In order to test the possibility of employing such detectors for the telescope, a detector head consisting of a continuous 16 mm Multiplication-Sign 18 mm Multiplication-Sign 5 mm LaBr{sub 3} crystal coupled to a SiPM array has been assembled and characterized, employing the SPIROC1 ASIC as readout electronics. The best energy resolution obtained at 511 keV is 6.5% FWHM and the timing resolution is 3.1 ns FWHM. A position determination method for continuous crystals is being tested, with promising results. In addition, the detector has been operated in time coincidence with a second detector layer, to determine the coincidence capabilities of the system. The first tests are satisfactory, and encourage the development of larger detectors that will compose the telescope prototype.

  8. Upgrade of the POLDI diffractometer with a ZnS(Ag)/6LiF scintillation detector read out with WLS fibers coupled to SiPMs

    International Nuclear Information System (INIS)

    A thermal neutron detector based on ZnS(Ag)/6LiF scintillator, wavelength- shifting fibers (WLS) and silicon photomultipliers (SiPM) is under development at the Paul Scherrer Institute (PSI) for upgrading the POLDI instrument, a pulse-overlap diffractometer. The design of the detector is outlined, and the measurements performed on a single channel prototype are presented. An innovative signal processing system based on a photon counting approach is under development. Its principle of operation is described and its performances are evaluated on the basis of a Monte Carlo simulation.

  9. Upgrade of the POLDI diffractometer with a ZnS(Ag)/6LiF scintillation detector read out with WLS fibers coupled to SiPMs

    CERN Document Server

    Mosset, J -B; Davydov, V; Hildebrandt, M; Van Swygenhoven, H; Wagner, W

    2013-01-01

    A thermal neutron detector based on ZnS(Ag)/6LiF scintillator, wavelength-shifting fibers (WLS) and silicon photomultipliers (SiPM) is under development at the Paul Scherrer Institute (PSI) for upgrading the POLDI instrument, a pulse-overlap diffractometer. The design of the detector is outlined, and the measurements performed on a single channel prototype are presented. An innovative signal processing system based on a photon counting approach is under development. Its principle of operation is described and its performances are evaluated on the basis of a Monte Carlo simulation.

  10. Energy-dispersive X-ray fluorescence of discarded tire samples, using a Si-PIN detector

    International Nuclear Information System (INIS)

    The determination of zinc concentration in samples of discarded tires is of great environmental interest because the process for manufacturing tyres uses S for rubber vulcanization, and ZnO is the reaction catalyst. Discarded tyres are being used in asphalt paving, in the burning process of thermoelectric and cement industries and also for controlling erosion in agricultural areas. Analysis of tyre samples usually requires chemical digestion which is slow and expensive. Aiming to eliminate those limitations, this work uses energy-dispersive X-ray fluorescence (EDXRF) with a portable equipment, once it is a simultaneous multi-element analytical technique, requiring minimal sample preparation. Five samples of discarded tyres have been ground and analysed in the form of pastilles, using a mini X-ray tube (Ag target, MO filter, 25 kV/20 μA) for 200 s, and a Si-PIN semiconductor detector coupled to a multichannel analyser. Zinc concentrations in the range of 40.6 to 44.2 μg g-1 have been obtained, representing 0.4% of the tire composition, which is below the maximum value (2%) recommended by the European Tyre Recycling Association. Concentrations between 0.15 and 0.52 μg g-1 were obtained for Fe

  11. Schottky barrier breakdown in Si stimulation by exciton drift in inhomogeneous electric field at 4.2 K

    International Nuclear Information System (INIS)

    Experimental study of the mechanism of the Schottky barrier breakdown stimulation in photoexcited silicon in the strong electric field at 4.2 K is presented. The effect of photoexcitation intensity and the intensity of the electric field applied, as well as the influence of their time on breakdown mechanism were studied. It is shown that Schottky barrier breakdown occurs due to the narrowing of the spatial charged region caused by the exciton drift under the inhomogeneous electric field and electron recombination at the barrier ionized impurity levels

  12. Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier

    Science.gov (United States)

    Krumme, B.; Ebke, D.; Weis, C.; Makarov, S. I.; Warland, A.; Hütten, A.; Wende, H.

    2012-12-01

    We investigated the electronic structure as well as the magnetic properties of a Co2MnSi film on MgO(100) element-specifically at the interface to a MgO tunnel barrier by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism. The electronic structure of the Co atoms as a function of the capping layer thickness remained unchanged, whereas the XA spectra of Mn indicate an increase of the unoccupied d states. The experimental findings are consistent with the interfacial structure proposed in the work by B. Hülsen et al. [Phys. Rev. Lett. 103, 046802 (2009)], where a MnSi layer is present at the interface to the MgO with oxygen atoms at top positions in the first MgO layer.

  13. Investigation of enzyme-sensitive lipid nanoparticles for delivery of siRNA to blood–brain barrier and glioma cells

    DEFF Research Database (Denmark)

    Bruun, Jonas; Larsen, Trine Bjørnbo; Jølck, Rasmus Irming;

    2015-01-01

    Clinical applications of siRNA for treating disorders in the central nervous system require development of systemic stable, safe, and effective delivery vehicles that are able to cross the impermeable blood–brain barrier (BBB). Engineering nanocarriers with low cellular interaction during systemic...... release of four glutamic acid residues, providing a charge switch that triggers a shift of the LNP charge from weakly negative to positive, thus favoring cellular endocytosis and release of siRNA for high silencing efficiency. This work describes the development of this two-stage nanocarrier-system and...... evaluates the performance in brain endothelial and glioblastoma cells with respect to uptake and gene silencing efficiency. The ability of activation by MMP-triggered dePEGylation and charge shift is demonstrated to substantially increase the uptake and the silencing efficiency of the LNPs....

  14. Dimensionless parameterization of lidar for laser remote sensing of the atmosphere and its application to systems with SiPM and PMT detectors

    OpenAIRE

    Agishev, Ravil R.; Comerón Tejero, Adolfo; Rodríguez Gómez, Alejandro Antonio; Sicard, Michaël

    2014-01-01

    In this paper, we show a renewed approach to the generalized methodology for atmospheric lidar assessment, which uses the dimensionless parameterization as a core component. It is based on a series of our previous works where the problem of universal parameterization over many lidar technologies were described and analyzed from different points of view. The modernized dimensionless parameterization concept applied to relatively new silicon photomultiplier detectors (SiPMs) and traditional pho...

  15. Dependence of the glow curve structure for a new KLT-300 (LiF:Mg, Cu, Na, Si) TL detector on the dopants concentration

    International Nuclear Information System (INIS)

    A new TL detector KLT-300 (KAERI LiF TL detector doped with Mg, Cu, Na, Si) for personal and medical monitoring purposes was recently developed at KAERI (Korea Atomic Energy Research Institute). The main parameters in preparation of the detector were the concentration of the dopants. In this research, the investigation of the glow curve structure for KLT-300 was performed with respect to the various concentrations of the Mg (0-0.25 mol%), Cu (0-0.07 mol%), Na and Si (0-1.5 mol%) dopants. With increasing the Cu concentration, the intensity of the main peak was very rapidly intensified and reached the maximum at a concentration of 0.05 mol% and then the high temperature peak was very rapidly reduced. The dependence of the main peak intensity on the Mg concentration exhibits a sharp maximum at 0.2 mol%. The intensity of the high temperature peak tends to slightly rise with an increasing Mg concentration. With increasing Na and Si concentrations, the main peak intensity was slightly intensified and reached a maximum at 0.9 mol%. (author)

  16. Fabrication and characterization of a 32 x 32 array digital Si-PIN X-ray detector for a single photon counting image sensor

    International Nuclear Information System (INIS)

    A Si-PIN X-ray detector for digital x-ray imaging with single photon counting capability has been fabricated and characterized. It consists of an array of 32 x 32 pixels with an area of 80 x 80 μm2. An extrinsic gettering process was performed to reduce the leakage current by removing the impurities and defects from the X-ray detector's Si substrate. Multiple guard-rings (MGRs) and metal filed plates (MFPs) techniques were adopted to reduce the leakage current and to improve the breakdown performance. The simulation verified that the breakdown voltage was improved with the MGRs and that the leakage current was significantly reduced with the MFPs. The electrical properties, such as the leakage current and the breakdown voltage, of the Si-PIN X-ray detector were characterized. The extrinsic gettering process played a significant role in reducing the leakage current, and a leakage current lower than 60 pA could be achieved at 100 Vdc.

  17. Nano-particle size-dependent charging and electro-deposition in dielectric barrier discharges at atmospheric pressure for thin SiO{sub x} film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jidenko, N [Equipe Decharges Electriques et Environnement du Laboratoire de Physique des Gaz et des Plasmas, UMR 8578 CNRS - Universite Paris-Sud Orsay, F-91405 Supelec, Plateau Moulon, F-91192 Gif Sur Yvette (France); Jimenez, C [Laboratoire de Genie Electrique de Toulouse, CNRS - Universite Paul Sabatier, Universite Paul Sabatier, 118 route de Narbonne, 31060 Toulouse (France); Massines, F [Laboratoire de Genie Electrique de Toulouse, CNRS - Universite Paul Sabatier, 118 route de Narbonne, 31060 Toulouse (France); Borra, J-P [Equipe Decharges Electriques et Environnement du Laboratoire de Physique des Gaz et des Plasmas, UMR 8578 CNRS - Universite Paris-Sud Orsay, F-91405 Supelec, Plateau Moulon, F-91192 Gif Sur Yvette (France)

    2007-07-21

    This paper focuses on charging and electro-deposition of nano-particles produced in a mixture of silane and nitrous oxide diluted in N{sub 2}, by dielectric barrier discharge (DBD) at atmospheric pressure for SiO{sub x} film deposition. Townsend discharge (TD) and filamentary discharge (FD) are compared with and without SiH{sub 4}. Without SiH{sub 4}, particles are produced by filament-surface interaction. Both filament-surface and plasma-silane interactions lead to bimodal particle size distributions from nucleation and agglomeration. With SiH{sub 4}, particle formation and growth imply the same mechanisms in TD and FD. Faster dynamics in FD are related to higher local volume energy density than in TD. From scanning electron microscope images of the film and measurements downstream of the DBD reactor, the diameter of the particle produced is below 50 nm. An analytical model of electro-collection in an ac electric field is used to investigate nano-particle charging. To account for selective electro-deposition leading to particles smaller than 50 nm being included in the layer and to particle size distribution measured downstream of the DBD, the same size-dependent charging and electro-deposition of particle are involved, with different charging dynamics in TD and FD.

  18. Failure behavior of ITO diffusion barrier between electroplating Cu and Si substrate annealed in a low vacuum

    International Nuclear Information System (INIS)

    A structure of Cu/ITO(10 nm)/Si was first formed and then annealed at various temperatures for 5 min in a rapid thermal annealing furnace under 10-2 Torr pressure. In Cu/ITO(10 nm)/Si structure, the ITO(10 nm) film was coated on Si substrate by sputtering process and the Cu film was deposited on ITO film by electroplating technique. The various Cu/ITO(10 nm)/Si samples were characterized by a four-point probe, a scanning electron microscope, an X-ray diffractometer, and a transmission electron microscope. The results showed that when the annealing temperature increases near 600 deg. C the interface between Cu and ITO becomes unstable, and the Cu3Si particles begin to form; and when the annealing temperature increases to 650 deg. C, a good many of Cu3Si particles about 1 μm in size form and the sheet resistance of Cu/ITO(10 nm)/Si structure largely increases.

  19. Comparative Measurements of the Photon Detection Efficiency of KETEK SiPM Detectors for the LHCb SciFi Upgrade Project

    CERN Document Server

    Joram, Christian

    2014-01-01

    The LHCb SciFi detector is conceived to employ arrays of SiPM detectors to detect scintillation light from ribbons of 2.5 m long scintillating fibres of 250 $\\mu$m diameter. The fibres of type Kuraray SCSF-78 are blue emitting with an emission maximum at 440 nm. However, as a consequence of the radiation damage mainly from charged hadrons in the LHCb experiments, the effective emission spectrum at the end of the fibre will shift to longer wavelengths. A simulation of the light absorption in the fibre, assuming an ionizing dose distribution along the fibre as predicted by the FLUKA code, is able to predict the emission spectrum. Fig. 1 shows the emission spectra (in arbitrary units) for 10 cm intervals along the fibre. At 250 cm, where the ionization dose is expected to reach over the full lifetime of the upgrade LHCb detector about 30 kGy, the average wavelength of emission is approximately 500 nm. The sensitivity spectrum of the SiPM detector should be tuned to match this emission spectrum, i.e. the PDE shou...

  20. Highly conformal SiO2/Al2O3 nanolaminate gas-diffusion barriers for large-area flexible electronics applications

    International Nuclear Information System (INIS)

    The present study demonstrates a flexible gas-diffusion barrier film, containing an SiO2/Al2O3 nanolaminate on a plastic substrate. Highly uniform and conformal coatings can be made by alternating the exposure of a flexible polyethersulfone surface to vapors of SiO2 and Al2O3, at nanoscale thickness cycles via RF-magnetron sputtering deposition. The calcium degradation test indicates that 24 cycles of a 10/10 nm inorganic bilayer, top-coated by UV-cured resin, greatly enhance the barrier performance, with a permeation rate of 3.79 x 10-5 g m-2 day-1 based on the change in the ohmic behavior of the calcium sensor at 20 deg. C and 50% relative humidity. Also, the permeation rate for 30 cycles of an 8/8 nm inorganic bilayer coated with UV resin was beyond the limited measurable range of the Ca test at 60 deg. C and 95% relative humidity. It has been found that such laminate films can effectively suppress the void defects of a single inorganic layer, and are significantly less sensitive against moisture permeation. This nanostructure, fabricated by an RF-sputtering process at room temperature, is verified as being useful for highly water-sensitive organic electronics fabricated on plastic substrates.

  1. Development of stable nuclear radiation detectors based on n-silicon/cobalt-phthalocyanine heterojunctions

    Science.gov (United States)

    Ray, A.; Prasad, R.; Betty, C. A.; Chandrasekhar Rao, T. V.

    2016-03-01

    n-silicon/cobalt-phthalocyanine (CoPc) heterojunction based nuclear detectors have been fabricated using thermally evaporated CoPc films. Two different thicknesses of CoPc film (viz. 100 nm and 200 nm) were tried out to make detectors by depositing on chemically polished n-Si wafers. Gold film on CoPc was used as electrical contact. The detectors were characterized by measuring their current-voltage (I-V) and leakage current-time (I-t) characteristics, followed by alpha energy spectra obtained on exposure to α-particles. Variation of alpha energy resolution with applied reverse bias voltage for each of the detectors was also studied. The detectors showed very low leakage current and high breakdown voltage as compared to conventional Au/n-Si surface barrier detectors. Finally, the durability of the detectors was established by measuring their I-V characteristics and energy resolution for nearly 15 months.

  2. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    International Nuclear Information System (INIS)

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La0.5Sr0.5CoO3/PbZr0.4Ti0.6O3/La0.5Sr0.5CoO3 (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm2, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories

  3. Thin surface layers of SiO2 obtained from tetraethoxysilane (TEOS) in electric discharges stabilized by a dielectric barrier

    International Nuclear Information System (INIS)

    The reported research was devoted to the process of thin layer deposition in a discharge at atmospheric pressure stabilized by a dielectric barrier. Thin surface layers composed mainly of silicon dioxide were produced by polycondensation of tetraethoxysilane vapor in mixtures with helium gas with a small amount of oxygen. The influence was studied of the voltage applied and of the time elapsed in the deposition process, on the thickness of the layer, as were the changes of composition of the deposited layers during and after storage. It is shown that good passivating pinhole-free silicon oxide layers can be produced in surface barrier discharges. (J.U.)

  4. Quantum well intersubband THz lasers and detectors

    Science.gov (United States)

    Soref, Richard A.; Friedman, Lionel R.; Sun, Gregory; Noble, Michael J.; Ram-Mohan, L. R.

    1999-11-01

    This paper presents modeling and simulation results on Si- based quantum-well intersubband THz detectors and THz lasers (tasers) in the 3 to 10 THz range where the intersubband transition energy is 12 to 41 meV. The incoherent cryogenically cooled (4 K to 20 K) quantum well terahertz detector (QWTD) consists of p-type Si0.9Ge0.1 QWs with Si barriers on an Si substrate, or of p-Si0.85Ge0.15/Si on a relaxed Si0.97Ge0.03 buffer on Si. The QWTD senses THz radiation at normal incidence (the XY polarization on the HH1 to LH1 transition) or at edge- illumination (the Z polarization on the HH1 to HH2 transition). Resonant-cavity enhancement, coupling to Si THz waveguides, and integration with SiGe transistor preamplifiers appear feasible for QWTDs. The quantum staircase taser is a simplified far-infrared version of the quantum cascade laser in which each superlattice transfer region is replaced by a thin tunnel-barrier layer. We have adapted to group IV the III-V idea of Sun, Lu, and Khurgin; the `inverted mass taser'. On a Si0.81Ge0.19 substrate, we find that an inverted effective mass exists in LH1 at kg equals 0.013 angstroms-1 in 9-nm single- wells of Si0.7Ge0.3 with 5-nm Si barriers. Selective electrical injection of holes into LH1 at T equals 77 K is postulated. This offers local-in-k-space LH1-HH1 population inversion and tasing at 7.2 THz. Since the taser emission is XY-polarized, the active MQW staircase (a set of identical square QWs) is suitable for insertion into a vertical cavity surface-emitting taser. The VCSET would have resonator thickness of (lambda) /2n equals 6 micrometers , and Bragg mirrors constructed from SiO2/Si multilayers.

  5. Response of CR39 detector to 5 A GeV Si14+ ions and measurement of total charge changing cross-section

    International Nuclear Information System (INIS)

    In the present work, response of CR39 track etch detector was obtained by cone-height measurement technique. CR39 track etch detector was used to identify the incident charged particles and their fragments by the measurements of cone-height of tracks using an optical microscope DM6000 M and automated image analyzer system installed with Leica QWin Plus software. The CR39 detector was calibrated and the response points were fitted with a linear relation and all the points are within the limits of the experimental errors. The charge resolution of the detector was calculated to be 0.2e. The response function is obtained and fitted with a linear relation which is good throughout Z/β=6.1–14.1. The experimental value of the total charge changing cross-section of 5 A GeV Si14+ ion beam in polyethylene and CR39 combined target is σtot=(734±128) mb. The total charge changing cross-section is compared with the experimental results of others based on cone base-area measurement technique and also fitted by the Bradt–Peters geometrical cross-section. - Highlights: • Charge resolution of 0.2e was obtained by cone-height measurement. • Consistency in manual measurements of cone-heights is presented. • Response of CR39 detector was obtained and fitted with first degree polynomial. • Total charge changing cross-section of 5 A GeV Si14+ ions in CH2 and CR39 as a combined target was calculated

  6. 4$\\pi$ detector for study of Zeno effect using 220Rn -> 216Po alpha->alpha correlated chains

    CERN Document Server

    Nadderd, L; Subotic, K; Polyakov, A N; Lobanov, Y V; Rykhlyuk, A V

    2015-01-01

    First test of the 4pi detector for study of exponential law of radioactive decay and possibility of observation of Zeno effect [1-3], measuring the mean life of 216Po is presented. This detector consists of two surface-barrier n-Si(Au) detectors placed in the close contact ( 4T1/2. Both, the data acquisition system and the vacuum chamber design are presented in brief.

  7. A γ-ray detector with a silicon photomultiplier (SiPM) readout for neutron diffraction experiments at spallation neutron sources

    International Nuclear Information System (INIS)

    Standard detectors for neutron diffraction experiments are typically 3He filled proportional counters. Indeed, in the near future the 3He availability will be greatly reduced, so the R and D activity on alternative neutron counters is a very important issue to be addressed. Scintillator detectors could be considered as one of these alternatives. In this context, a prototype thermal neutron counter composed of a yttrium–aluminium–perovskite scintillator crystal coupled to a silicon photomultiplier (SiPM) and a standard photomultiplier tube (PMT) was used in time of flight neutron diffraction experiments on the INES spectrometer at the ISIS spallation neutron source. Neutron detection was realized by attaching the crystal to a natural cadmium sheet, used as a (n, γ) converter. Results show that the SiPM-based readout detection system has promising performances with respect to that based on a standard PMT. Diffraction patterns recorded with the 3He tubes' neutron counters in use on INES allowed a comparative assessment of the SiPM-based device for time of flight neutron diffraction experiments, with respect to the standard detection technique

  8. High Internal Gain Axial SiOx-In2-xO3-y/Au Heterostructure Nanocolumnar Array Based Schottky Detector for Broad Band Recognition.

    Science.gov (United States)

    Singh, Naorem Khelchand; Mondal, Aniruddha

    2015-08-01

    Glancing angle deposition (GLAD) was employed to fabricate the SiOx-In2-xO3-y axial heterostructure nanocolumn. The fabricated heterostructure nanocolumn was annealed at 550 °C for 1 hour at open air condition. The XRD analysis revealed the polycrystalline nature of the annealed SiOx-In2-xO3-y nanocolumn. The emission at 378 nm (~3.3 eV, FWHM 39.101 nm) from Photoluminescence (PL), corresponds to main band gap of In2O3. The In2-xO3-y-SiOx nanocolumn based Schottky detector processed maximum photoresponsivity of 199 A/W at 375 nm, as well as UV-Vis broad band detection. The high internal gain of ~659 at UV region (375 nm) was calculated for the device. The detector exhibited increase in photoresponsivity with decrease in room temperature upto 160 K, which further reduced at low temperature. A very sharp rise time (~1.82 s) and decay time (~1.78 s) was recorded at the applied potential of -2 V and -3 V. PMID:26369205

  9. Performance degradation of Si pin photodiodes, used as particle detectors, under 2 MeV proton irradiation

    International Nuclear Information System (INIS)

    Complete text of publication follows. Nowadays high quality Si pin photodiodes are cheap and reliable alternatives to nuclear semiconductor detectors for a wide range of application, especially for charged particle detection. Normal silicon with low oxygen content, however, is known as having low radiation tolerance. Therefore, the performance degradation of Hamamatsu S-5821 diodes has been investigated as a function of fluence for a series of ions. Selected areas of a photodiode were irradiated with various fluences of 2 MeV protons in the range of 1 x 109 - 5 x 1011 ion/cm2 without applying any bias. In order to investigate the impact of the irradiation on the particle detection response of the diode the radiation induced changes were measured with IBIC mapping using also 2 MeV protons in a wide range of reverse bias, from 0 to 100 V in logarithmic steps. The major influence of the irradiation is the decrease of the charge collection efficiency (CCE), i.e. the shift of the spectral peak position towards lower energies, and the increase of the dispersion of CCE, i.e. the widening of the spectral peaks, in other words the increase of the FWHM values, Δ. Since within the irradiated regions these quantities show strong position dependence due to boundary effect, the evaluation of the experimental data was restricted to the central homogenous parts. Quantitative empirical relationships above 10 V bias for the radiation induced contributions to the CCE and FWHM have been deduced as follows [1]: δ(CCE)rad = (-3.3 ± 0.5) x 10-13 Φ[cm-2]/U[V] Δrad[keV ] = (4 ± 1.5) x 10-5 √Φ[cm-2]/U[V] These contributions add linearly to irradiation free CCE, and quadratically to FWHM values, respectively. Since the effect of the irradiation - both on CCE and FWHM - is inversely proportional to the applied bias voltage, it can be significantly reduced by applying the possible highest bias without breakdown or increase of electrical noises due to increased leakage current. In this

  10. Normally-Off AlGaN/GaN-on-Si Power Switching Device with Embedded Schottky Barrier Diode

    Science.gov (United States)

    Park, Bong-Ryeol; Lee, Jae-Gil; Cha, Ho-Young

    2013-03-01

    We have demonstrated a novel AlGaN/GaN power switching device with an embedded Schottky barrier diode. The normally-off transistor mode was implemented with a recessed metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) configuration in which a Schottky barrier diode (SBD) was embedded to flow the reverse current. The proposed device is very promising for use in high-efficiency converter and inverter ICs. The prototype device exhibited encouraging characteristics: a turn-on voltage of 2 V for the transistor and a forward turn-on voltage of 0.8 V for the embedded diode. The breakdown voltage for the anode-to-cathode distance of 10 µm was 966 V.

  11. A high granularity scintillator hadronic — calorimeter with SiPM readout for a linear collider detector

    Czech Academy of Sciences Publication Activity Database

    Andreev, V.; Balagura, V.; Bobchenko, B.; Cvach, Jaroslav; Janata, Milan; Kacl, Ivan; Němeček, Stanislav; Polák, Ivo; Valkár, Š.; Weichert, Jan; Zálešák, Jaroslav

    2005-01-01

    Roč. 540, - (2005), s. 368-380. ISSN 0168-9002 R&D Projects: GA MŠk(CZ) LN00A006 Institutional research plan: CEZ:AV0Z10100502 Keywords : linear collider detector * analog calorimeter * semiconductor detectors * scintillator * high granularity Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.224, year: 2005

  12. Surge current capabilities and isothermal current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

    Science.gov (United States)

    Palmour, J. W.; Levinshtein, M. E.; Ivanov, P. A.; Zhang, Q. J.

    2015-06-01

    Isothermal forward current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers (JBS) have been studied for the first time. Isothermal characteristics were measured with JBS having a blocking voltage of 1700 V up to a current density j  ≈  4200 A cm-2 in the temperature range 297-460 K. Quasi-isothermal current-voltage characteristics of these devices were studied with injection of minority carriers (holes) up to j  ≈  7200 A cm-2 and ambient temperatures of 297 and 460 K. The isothermal forward current-voltage characteristics make it possible to numerically calculate (for example, by an iteration procedure) the overheating in an arbitrary operation mode.

  13. Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

    Science.gov (United States)

    Wang, Xiang-Dong; Deng, Xiao-Chuan; Wang, Yong-Wei; Wang, Yong; Wen, Yi; Zhang, Bo

    2014-05-01

    This paper describes the successful fabrication of 4H-SiC junction barrier Schottky (JBS) rectifiers with a linearly graded field limiting ring (LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 (about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.

  14. Performance and emission characteristics of the thermal barrier coated SI engine by adding argon inert gas to intake mixture

    OpenAIRE

    Karthikeya Sharma, T.

    2014-01-01

    Dilution of the intake air of the SI engine with the inert gases is one of the emission control techniques like exhaust gas recirculation, water injection into combustion chamber and cyclic variability, without scarifying power output and/or thermal efficiency (TE). This paper investigates the effects of using argon (Ar) gas to mitigate the spark ignition engine intake air to enhance the performance and cut down the emissions mainly nitrogen oxides. The input variables of this study include t...

  15. SU-C-201-01: Investigation of the Effects of Scintillator Surface Treatment On Light Output Measurements with SiPM Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Valenciaga, Y; Prout, D; Chatziioannou, A [University of California, Los Angeles (UCLA) (United States)

    2015-06-15

    Purpose: To examine the effect of different scintillator surface treatments (BGO crystals) on the fraction of scintillation photons that exit the crystal and reach the photodetector (SiPM). Methods: Positron Emission Tomography is based on the detection of light that exits scintillator crystals, after annihilation photons deposit energy inside these crystals. A considerable fraction of the scintillation light gets trapped or absorbed after going through multiple internal reflections on the interfaces surrounding the crystals. BGO scintillator crystals generate considerably less scintillation light than crystals made of LSO and its variants. Therefore, it is crucial that the small amount of light produced by BGO exits towards the light detector. The surface treatment of scintillator crystals is among the factors affecting the ability of scintillation light to reach the detectors. In this study, we analyze the effect of different crystal surface treatments on the fraction of scintillation light that is detected by the solid state photodetector (SiPM), once energy is deposited inside a BGO crystal. Simulations were performed by a Monte Carlo based software named GATE, and validated by measurements from individual BGO crystals coupled to Philips digital-SiPM sensor (DPC-3200). Results: The results showed an increment in light collection of about 4 percent when only the exit face of the BGO crystal, is unpolished; compared to when all the faces are polished. However, leaving several faces unpolished caused a reduction of at least 10 percent of light output when the interaction occurs as far from the exit face of the crystal as possible compared to when it occurs very close to the exit face. Conclusion: This work demonstrates the advantages on light collection from leaving unpolished the exit face of BGO crystals. The configuration with best light output will be used to obtain flood images from BGO crystal arrays coupled to SiPM sensors.

  16. Time-of-flight ERD with a 200 mm2 Si3N4 window gas ionization chamber energy detector

    International Nuclear Information System (INIS)

    Low energy heavy ion elastic recoil detection work has been carried out in Jyväskylä since 2009 using home made timing detectors, a silicon energy detector and a timestamping data acquisition setup forming a time-of-flight–energy telescope. In order to improve the mass resolution of the setup a new energy detector was designed to replace the silicon solid state detector, which suffered from radiation damage and had poor resolution for heavy recoils. In this paper the construction and operation of an isobutane filled gas ionization chamber with a 14 × 14 mm2 100 nm thick silicon nitride window are described. In addition to greatly improved energy resolution for heavy ions, the detector is also able to detect hydrogen recoils simultaneously in the energy range of 100–1000 keV. Additionally the detector has position sensitivity by means of timing measurement, which can be performed without compromising the performance of the detector in any other way. The achieved position sensitivity improves the depth resolution near the surface

  17. 离子注入型与金硅面垒型半导体探测器温度特性比较%Temperature Characteristic Comparison between Ion-injection and Gold Silicon Surface Barrier Semi-conducting Detectors

    Institute of Scientific and Technical Information of China (English)

    崔晓辉; 谷铁男; 张燕; 袁宝吉; 刘明健; 闫学昆

    2011-01-01

    The performance of semi-conducting detector is sensitive to temperature,which directly affects the stability and precision of spectrum system.A bias-voltage testing circuit,used for temperature characteristic testing was designed firstly,and then the characteristic curve between bias-voltage and temperature,for ion-injection detector and gold silicon surface barrier detector respectively,was ascertained.Experimental results show that the temperature characteristic of an ion-injection detector is much better than that of a gold silicon surface barrier detector.This method is valid for the use and selection of semi-conducting detector.%半导体探测器性能受温度影响较大,影响着辐射探测系统的稳定性和测量精度。本文设计了一个温度测试电路,通过温度测试实验分别得出了离子注入型和金硅面垒型半导体探测器的温度特性曲线。测试结果表明,离子注入型半导体探测器的温度特性明显优于金硅面垒型半导体探测器。本文的结果可为半导体探测器的使用、筛选提供参考。

  18. Impact of metal overhang and guard ring techniques on breakdown voltage of Si strip sensors - 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

    CERN Document Server

    Ranjan, K; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The importance of Si sensors in high-energy physics (HEP) experiments can hardly be overemphasized. However, the high luminosity and the high radiation level in the future HEP experiments, like Large Hadron Collider (LHC), has posed a serious challenge to the fabrication of Si detectors. For the safe operation over the full LHC lifetime, detectors are required to sustain very high voltage operation, well exceeding the bias voltage needed to full deplete the heavily irradiated Si sensors. Thus, the main effort in the development of Si sensors is concentrated on a design that avoids p-n junction breakdown at operational biases. Among various proposed techniques, Field-limiting Ring (FLR) (or guard ring) and Metal-Overhang (MO) are technologically simple and are suitable for vertical devices. Since high-voltage planar Si junctions are of great importance in the HEP experiments, it is very interesting to compare these two aforementioned techniques for achieving the maximum breakdown voltage under optimal conditio...

  19. Detection efficiencies of solid state nuclear track detectors for fission fragments

    International Nuclear Information System (INIS)

    Detection efficiencies of solid state nuclear track detectors (SSNTDs) for fission fragments have been calibrated with the help of Au-Si surface barrier detector and fission chamber. The results obtained for thin fission source are given for muscovite mica; polycarbonate foil; polyester; phosphate glass; silicate glass; and quartz. Corrections have been made for the effect of backscattering of fission fragments by Au-Si surface barrier detector on the detection efficiencies with a special designed arrangement using SSNTD. The effects of backscattering of fission fragments on detection efficiencies range from 0 for silicate glass to 2.6% for polycarbonate foil (Chaoyan) for using Au-Si as backing material. A discussion was given to the effect of critical angles of SSNTDs on the correction for self absorption of fission fragments in thick fission sources. A formula is given to calculate the detection efficiency of SSNTDs for fission fragments from fission sources of various thickness. (author)

  20. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    Energy Technology Data Exchange (ETDEWEB)

    Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

    2015-10-05

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.

  1. Fabrication, Testing and Integration Technologies of Polymer Microlens for Pt/Si Schottky-Barrier Infrared Charge Coupled Device Applications

    Institute of Scientific and Technical Information of China (English)

    KE Cai-Jun; YI Xin-Jian; LAI Jian-Jun; CHEN Si-Hai

    2005-01-01

    @@ A novel polymer refractive microlens array has been formed on the surface of 256(V)×290(H) PtSi Schottkybarrier infrared charge coupled device (IRCCD) image sensors to improve the photoresponsivity of the IRCCD.The fabrication process flows of polymer microlens array are described. An effective aperture ratio in excess of 92% of microlens array has been achieved. An experimental facility to evaluate the optical performance ofmicrolens array is introduced. The measurement results show that the microlens array indicates better than 4% non-uniformity of focal length and high optical performance. The application of the microlens array to improve the photosensitivity of infrared CCD is discussed.

  2. Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers

    International Nuclear Information System (INIS)

    possible choices are, however, quite limited, since only 'mature' materials, which operate at room temperature and can be manufactured reliably should reasonably be considered. Since GaAs is still known to cause reliability problems, the simplest choice is Si, however with the drawback of strong Compton scatter which can cause considerable inter-pixel cross-talk. To investigate the potential and the problems of Si in a multi-layer detector, in this paper the combination of top detector layers made of Si with lower layers made of Cd[Zn]Te is studied by using Monte Carlo simulated detector responses. It is found that the inter-pixel cross-talk due to Compton scatter is indeed very high; however, with an appropriate cross-talk correction scheme, which is also described, the negative effects of cross-talk are shown to be removed to a very large extent.

  3. Responsivity enhancement of ZnO/Pt/MgZnO/SiO2 and MgZnO/Pt/ZnO/SiO2 structured ultraviolet detectors by surface plasmons in Pt nanoparticles

    Science.gov (United States)

    Sun, Long; Jiang, Dayong; Zhang, Guoyu; Liu, Rusheng; Duan, Qian; Qin, Jieming; Liang, Qingcheng; Gao, Shang; Hou, Janhua; Zhao, Jianxun; Liu, Wanqiang; Shen, Xiande

    2016-01-01

    The structured (ZnO/Pt/MgZnO/SiO2) ultraviolet detector was fabricated and demonstrated to investigate how metallic nanoparticles localized surface plasmons contribute when the two different dielectrics surrounded simultaneously. After sandwiching the Pt nanoparticles between the double layers of MgZnO and ZnO, the extinction was increased largely. Meanwhile, by examining the dependence of MgZnO and ZnO peak responsivity enhancement ratio, we found that MgZnO was significantly larger than ZnO. The interpretation by considering is that the localized surface plasmons of energy match with MgZnO which is superior to ZnO. In order to validate this conclusion and make it more accurate, we also fabricated the MgZnO/Pt/ZnO/SiO2 structure. Our work suggests that rational integration of double-layer and metal nanoparticles is a viable approach to perceive localized surface plasmons with double-layer ultraviolet detectors, which may help to advance optoelectronic devices.

  4. High-contrast X-ray radiography using hybrid semiconductor pixel detectors with 1 mm thick Si sensor as a tool for monitoring liquids in natural building stones

    International Nuclear Information System (INIS)

    For the preservation of buildings and other cultural heritage, the application of various conservation products such as consolidants or water repellents is often used. X-ray radiography utilizing semiconductor particle-counting detectors stands out as a promising tool in research of consolidants inside natural building stones. However, a clear visualization of consolidation products is often accomplished by doping with a contrast agent, which presents a limitation. This approach causes a higher attenuation for X-rays, but also alters the penetration ability of the original consolidation product. In this contribution, we focus on the application of Medipix type detectors newly equipped with a 1 mm thick Si sensor. This thicker sensor has enhanced detection efficiency leading to extraordinary sensitivity for monitoring consolidants and liquids in natural building stones even without any contrast agent. Consequently, methods for the direct monitoring of organosilicon consolidants and dynamic visualization of the water uptake in the Opuka stone using high-contrast X-ray radiography are demonstrated. The presented work demonstrates a significant improvement in the monitoring sensitivity of X-ray radiography in stone consolidation studies and also shows advantages of this detector configuration for X-ray radiography in general

  5. The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

    OpenAIRE

    Watanabe, Shin; Tajima, Hiroyasu; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin'ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Astushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro

    2015-01-01

    The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60--600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton...

  6. Calibration of an UTW Si(Li) detector in the 0.28-22.1 keV energy range

    CERN Document Server

    Uzonyi, I; Borbely-Kiss, I; Kiss, A Z

    2003-01-01

    The application of such detectors in the sub-keV region has been quite limited supposedly due to the lack of well-established calibration methods and the difficulties associated with their operation. The aim of this study has been twofold: first to check the applicability of the (micro)PIXE method for efficiency measurement of an UTW detector in the C K-Ag K subalpha energy region using thick targets, allowing a simple and low-cost solution for this problem; second: to test the new version of the PIXEKLM program down to the sub-keV range. (R.P.)

  7. Beam test results on Si and GaAs microstrip detectors with length up to 64 cm

    International Nuclear Information System (INIS)

    This study is aimed at exploring the details of various aspects of building long microstrip ladders for future particle physics collider experiments. Several configurations of silicon microstrip detectors (up to 64 cm in length) and two GaAs detectors were constructed and beam tested using the Viking front end chip and a PC-based data acquisition system allowing easy comparison and understanding of the results. Results on cluster charge, signal-to-noise, resolutions, and efficiencies for different configurations are presented and compared here. (orig.)

  8. Gamma large area silicon telescope: Applying SI strip detector technology to the detection of gamma rays in space

    Science.gov (United States)

    Atwood, W. B.; Bloom, E. D.; Godfrey, G. L.; Hertz, P. L.; Lin, Ying-Chi; Nolan, P. L.; Snyder, A. E.; Taylor, R. E.; Wood, K. S.; Michelson, P. F.

    1992-12-01

    The recent discoveries and excitement generated by EGRET (Energetic Gamma Ray Experiment Telescope) (presently operating on CGRO (Compton Gamma Ray Observatory)) has prompted an investigation into modern technologies ultimately leading to the next generation space based gamma ray telescope. The goal is to design a detector that would increase the data acquisition rate by almost two orders of magnitude beyond EGRET, while at the same time improving on the angular resolution, the energy measurement of reconstructed gamma rays and the triggering capability of the instrument. The proposed GLAST (Gamma Ray Large Area Silicon Telescope) instrument is based on silicon particle detectors that offer the advantages of no consumables, no gas volume, robust (versus fragile), long lived, and self triggering. The GLAST detector is roughly modeled after EGRET in that a tracking module precedes a calorimeter. The GLAST tracker has planes of cross strip (x, y) 300 micrometer match silicon detectors coupled to a thin radiator to measure the coordinates of converted electron-positron pairs. An angular resolution of 0.1 deg at high energy is possible (the low energy angular resolution 100 MeV would be about 2 deg, limited by multiple scattering). The increased depth of the GLAST calorimeter over EGRET's extends the energy range to about 300 GeV.

  9. Determination of U, Fe, V in uranium ore and gross alpha beta through the exploitation, processing and handling of radioactive ore on the portable XRF Si-PIN detector and device of alpha beta MPC-2000

    International Nuclear Information System (INIS)

    The concentration of some elements such as U, Fe, and V in uranium ore was determined by using Si-PIN detector fluorescence spectrometry. The technical parameters of Si-PIN spectrometry were investigated. The fundamental parameters in QXAS software were used for calculating analytical results. The gross alpha beta from the liquid radioactive liquid was also determined by MPC-2000 instrument based on the dependence of the signal received ability of detector on thickness of analysis samples. The precision and accuracy of quantitative analysis were tested by references material standard and comparative analysis with different analytical methods. (author)

  10. NUV/VIS sensitive multicolor thin film detector based on a-SiC:H/a-Si:H/μc-SiGeC:H alloys with an in-situ structured transparent conductive oxide front contact without etching

    International Nuclear Information System (INIS)

    An innovative family of hydrogenated amorphous silicon (a-Si:H) multicolor p–i–n photo sensors, sensitive in the VIS and the near UV spectrum, is presented. Typical values of the quantum efficiency at 350 nm and 580 nm are 5.4% and 54.7%, respectively, with − 0.4 V and − 12 V bias. Electro-optical studies were performed to explore the effect of combining linearly graded a-SiGe:H/μc-SiGeC:H layers with linearly graded a‐SiC:H-layers. The devices presented additionally contain a buried a-Si:H region. Low-reflective aluminum doped zinc oxide (ZnO:Al) back contacts improve the spectral color separation. μτ-products and absorption coefficients of graded absorbers were determined. Discrete absorbers were substituted by a linear graded a-SiC:H absorption zone in the top structure, an interior a-Si:H region and a graded a-SiGe:H/a-SiC:H alloy combination. In this paper we demonstrate a reduction of interference fringes and operation at low bias voltages, combined with a highly precise adjustment of the spectral sensitivity, even in the near UV-spectrum. The device dynamic range exceeds 50 dB at 1000 lx white-light illumination. As the deposited upper layers adopt the roughness of μc-SiGeC:H clusters in the rear absorber, we present an in-situ structured front contact without etching ZnO:Al. - Highlights: ► Structuring zinc oxide anode without etching ► UV/VIS amorphous silicon sensor ► Microcrystalline narrow gap absorber ► Significant color separation improvement

  11. NUV/VIS sensitive multicolor thin film detector based on a-SiC:H/a-Si:H/{mu}c-SiGeC:H alloys with an in-situ structured transparent conductive oxide front contact without etching

    Energy Technology Data Exchange (ETDEWEB)

    Bablich, A., E-mail: andreas.bablich@uni-siegen.de; Boehm, M., E-mail: m.boehm@t-online.de

    2012-10-01

    An innovative family of hydrogenated amorphous silicon (a-Si:H) multicolor p-i-n photo sensors, sensitive in the VIS and the near UV spectrum, is presented. Typical values of the quantum efficiency at 350 nm and 580 nm are 5.4% and 54.7%, respectively, with - 0.4 V and - 12 V bias. Electro-optical studies were performed to explore the effect of combining linearly graded a-SiGe:H/{mu}c-SiGeC:H layers with linearly graded a-SiC:H-layers. The devices presented additionally contain a buried a-Si:H region. Low-reflective aluminum doped zinc oxide (ZnO:Al) back contacts improve the spectral color separation. {mu}{tau}-products and absorption coefficients of graded absorbers were determined. Discrete absorbers were substituted by a linear graded a-SiC:H absorption zone in the top structure, an interior a-Si:H region and a graded a-SiGe:H/a-SiC:H alloy combination. In this paper we demonstrate a reduction of interference fringes and operation at low bias voltages, combined with a highly precise adjustment of the spectral sensitivity, even in the near UV-spectrum. The device dynamic range exceeds 50 dB at 1000 lx white-light illumination. As the deposited upper layers adopt the roughness of {mu}c-SiGeC:H clusters in the rear absorber, we present an in-situ structured front contact without etching ZnO:Al. - Highlights: Black-Right-Pointing-Pointer Structuring zinc oxide anode without etching Black-Right-Pointing-Pointer UV/VIS amorphous silicon sensor Black-Right-Pointing-Pointer Microcrystalline narrow gap absorber Black-Right-Pointing-Pointer Significant color separation improvement.

  12. Study of oxide facing at silicone detectors of ionization detectors

    International Nuclear Information System (INIS)

    Formation of oxide facing on silicone in discrete phases of technological preparation of detectors and interaction of gold (aluminium) steamed with SiOx layer were studied. The homogeneity of Au and Si)x layers and interface Au-SiOx and SiOx-Si were examined. The methods SIMS, and partially XPS, AES and RBS were used

  13. Photocapacitive MIS infrared detectors

    Science.gov (United States)

    Sher, A.; Lu, S. S.-M.; Moriarty, J. A.; Crouch, R. K.; Miller, W. E.

    1978-01-01

    A new class of room-temperature infrared detectors has been developed through use of metal-insulator-semiconductor (MIS) or metal-insulator-semiconductor-insulator-metal (MISIM) slabs. The detectors, which have been fabricated from Si, Ge and GaAs, rely for operation on the electrical capacitance variations induced by modulated incident radiation. The peak detectivity for a 1000-A Si MISIM detector is comparable to that of a conventional Si detector functioning in the photovoltaic mode. Optimization of the photocapacitive-mode detection sensitivity is discussed.

  14. Investigation of enzyme-sensitive lipid nanoparticles for delivery of siRNA to blood–brain barrier and glioma cells

    Directory of Open Access Journals (Sweden)

    Bruun J

    2015-09-01

    Full Text Available Jonas Bruun,1 Trine B Larsen,1 Rasmus I Jølck,1 Rasmus Eliasen,1 René Holm,2 Torben Gjetting,1 Thomas L Andresen11Department of Micro- and Nanotechnology, Center for Nanomedicine and Theranostics, Technical University of Denmark, DTU Nanotech, Lyngby, Denmark; 2H Lundbeck A/S, Biologics and Pharmaceutical Science, Valby, DenmarkAbstract: Clinical applications of siRNA for treating disorders in the central nervous system require development of systemic stable, safe, and effective delivery vehicles that are able to cross the impermeable blood–brain barrier (BBB. Engineering nanocarriers with low cellular interaction during systemic circulation, but with high uptake in targeted cells, is a great challenge and is further complicated by the BBB. As a first step in obtaining such a delivery system, this study aims at designing a lipid nanoparticle (LNP able to efficiently encapsulate siRNA by a combination of titratable cationic lipids. The targeted delivery is obtained through the design of a two-stage system where the first step is conjugation of angiopep to the surface of the LNP for targeting the low-density lipoprotein receptor-related protein-1 expressed on the BBB. Second, the positively charged LNPs are masked with a negatively charged PEGylated (poly(ethylene glycol cleavable lipopeptide, which contains a recognition sequence for matrix metalloproteinases (MMPs, a class of enzymes often expressed in the tumor microenvironment and inflammatory BBB conditions. Proteolytic cleavage induces PEG release, including the release of four glutamic acid residues, providing a charge switch that triggers a shift of the LNP charge from weakly negative to positive, thus favoring cellular endocytosis and release of siRNA for high silencing efficiency. This work describes the development of this two-stage nanocarrier-system and evaluates the performance in brain endothelial and glioblastoma cells with respect to uptake and gene silencing efficiency. The

  15. Optical property of CR-39 synthesized by doping with methylviologen-encapsulated SiO2 nanocapsules as a solid-state X-ray plate detector

    Science.gov (United States)

    Miyoshi, Hirokazu; Kida, Fumio; Yamada, Kenji; Tsuchiya, Koichiro; Hase, Hitoshi

    2016-05-01

    A CR-39 plate synthesized by doping with methylviologen-encapsulated SiO2 nanocapsules was firstly demonstrated as a solid-state X-ray (80 kV) detector for diagnostic examination without etching using an alkali solution. The X-ray-irradiated area was clearly observed as an emission image by exciting with a laser in FLA-9000. The maximum intensity was obtained using a 532 nm laser. The emission intensity at the X-ray-irradiated area increased linearly from 0.5 to 3 Gy with increasing thickness from 1 to 5 mm. In 15-nm-diameter silica nanocapsules and 4-5-mm-thick CR-39, the maximum intensity was observed by X-ray irradiation.

  16. Radiation hardness of a wide-bandgap material by the example of SiC nuclear radiation detectors

    International Nuclear Information System (INIS)

    A polarization effect characteristically occurs in detectors based on wide-bandgap materials at considerable concentrations of radiation defects. The appearance of an electromotive force in the bulk of a detector is due to the long-term capture of carriers at deep levels related to radiation centers. The kinetics and strength of the polarization field have been determined. The carrier capture by the radiation centers can be controlled by varying the detector temperature, with a compromise reached at the “optimal” temperature between the generation current and the position of the deepest of the levels whose contribution to the loss of charge via capture is negligible. It has been found that the depth of a level of this kind (related to the energy gap width) is close to 1/3, irrespective of a material. The optimal temperatures are strictly individual for materials. - Highlights: ► We analyze the strength of the polarization field and his kinetics. ► We find the optimal operating temperature at which carrier capture can be precluded. ► Simultaneously the generation current does not exceed a prescribed value. ► A comparison of the materials radiation hardnesses is correct at optimal temperature.

  17. Multilayer moisture barrier

    Energy Technology Data Exchange (ETDEWEB)

    Pankow, Joel W; Jorgensen, Gary J; Terwilliger, Kent M; Glick, Stephen H; Isomaki, Nora; Harkonen, Kari; Turkulainen, Tommy

    2015-04-21

    A moisture barrier, device or product having a moisture barrier or a method of fabricating a moisture barrier having at least a polymer layer, and interfacial layer, and a barrier layer. The polymer layer may be fabricated from any suitable polymer including, but not limited to, fluoropolymers such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), or ethylene-tetrafluoroethylene (ETFE). The interfacial layer may be formed by atomic layer deposition (ALD). In embodiments featuring an ALD interfacial layer, the deposited interfacial substance may be, but is not limited to, Al.sub.2O.sub.3, AlSiO.sub.x, TiO.sub.2, and an Al.sub.2O.sub.3/TiO.sub.2 laminate. The barrier layer associated with the interfacial layer may be deposited by plasma enhanced chemical vapor deposition (PECVD). The barrier layer may be a SiO.sub.xN.sub.y film.

  18. 1-kV AlGaN/GaN Schottky barrier diode on a Si substrate by oxidizing the Schottky contact

    International Nuclear Information System (INIS)

    High-voltage AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated on Si substrates by oxidizing Ni-based Schottky contacts. Oxidation successfully suppresses the isolation-leakage current by about three orders of magnitude because GaOx and AlOx formed at the mesa-etched and active regions with suppressing surface conduction. The oxidation decreased the reverse leakage current of the devices. The reverse leakage current of the oxidized device was less than 10 mA/cm2 at -100 V. The Schottky contact was changed from a Ni/Au to a Ni/Ni-Au complex/Au/NiOx structure after the oxidation. Ni was diffused into AlGaN during the oxidation, which improved the Schottky interface. When the anode-cathode distance (DAC) was 20 μm, the forward voltage drop, the on-resistance, and the breakdown voltage of the oxidized device were 1.82 V, 5.11 mΩ-cm2, and 606 V, respectively. The breakdown voltage was further increased up to 1.1 kV by inserting 2 floating metal rings at a 50-μm-long drift length. The oxidation process is suitable for high-voltage GaN devices with Ni-based Schottky contacts.

  19. Influence of dopants on the glow curve structure and energy dependence of LiF:Mg, Cu, Si detectors

    OpenAIRE

    Knežević, Željka; Ranogajec-Komor, Maria; Miljanić, Saveta; Lee, Jungil; Kim, Jang-Lyul; Musić, Svetozar

    2011-01-01

    LiF thermoluminescent material doped with Mg, Cu and Si recently developed by the Korea Atomic Energy Research Institute (KAERI) has shown very good dosimetric properties. Since the thermoluminescence in LiF was found to be dependent on the proper combination of dopants, the investigation of the concentration and type of dopants is very important in developing and characterisation of new TL materials. The aim of this work was to determine the influence of type and concentration of activators ...

  20. Dimensionless parameterization of lidar for laser remote sensing of the atmosphere and its application to systems with SiPM and PMT detectors.

    Science.gov (United States)

    Agishev, Ravil; Comerón, Adolfo; Rodriguez, Alejandro; Sicard, Michaël

    2014-05-20

    In this paper, we show a renewed approach to the generalized methodology for atmospheric lidar assessment, which uses the dimensionless parameterization as a core component. It is based on a series of our previous works where the problem of universal parameterization over many lidar technologies were described and analyzed from different points of view. The modernized dimensionless parameterization concept applied to relatively new silicon photomultiplier detectors (SiPMs) and traditional photomultiplier (PMT) detectors for remote-sensing instruments allowed predicting the lidar receiver performance with sky background available. The renewed approach can be widely used to evaluate a broad range of lidar system capabilities for a variety of lidar remote-sensing applications as well as to serve as a basis for selection of appropriate lidar system parameters for a specific application. Such a modernized methodology provides a generalized, uniform, and objective approach for evaluation of a broad range of lidar types and systems (aerosol, Raman, DIAL) operating on different targets (backscatter or topographic) and under intense sky background conditions. It can be used within the lidar community to compare different lidar instruments. PMID:24922200

  1. Measurement of X-ray spectra using a Lu2(SiO4)O-multipixel-photon detector with changes in the pixel number

    International Nuclear Information System (INIS)

    To measure X-ray spectra with high count rates, we developed a detector consisting of a Lu2(SiO4)O [LSO] crystal with a decay time of 40 ns and a multipixel photon counter (MPPC). The photocurrents flowing through the MPPC are converted into voltages and amplified by a high-speed current–voltage amplifier, and event pulses from the amplifier are sent to a multichannel analyzer to measure spectra. We used three MPPCs of 100, 400 and 1600 pixels/mm2, and the MPPCs were driven under pre-Geiger mode at a temperature of 20 °C. At a tube voltage of 100 kV and a tube current of 5.0 μA, the maximum count rate was 12.8 kilo-counts per second. The event-pulse widths were 200 ns, and the energy resolution was 53% at 59.5 keV using a 100-pixel MPPC. - Highlights: • Zero-dark-counting X-ray detection was performed under pre-Geiger mode. • 200-ns-width event pulses were produced by a high-speed amplifier. • X-ray spectra were measured using three LSO-MPPC detectors. • Energy resolution improved with decreasing MPPC pixel number

  2. A SiPM-based isotropic-3D PET detector X'tal cube with a three-dimensional array of 1 mm{sup 3} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yamaya, Taiga; Mitsuhashi, Takayuki; Inadama, Naoko; Nishikido, Fumihiko; Yoshida, Eiji; Murayama, Hideo [Molecular Imaging Center, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555 (Japan); Matsumoto, Takahiro; Kawai, Hideyuki; Suga, Mikio [Chiba University, 1-33 Yayoicho, Inage-ku, Chiba 263-8522 (Japan); Watanabe, Mitsuo, E-mail: taiga@nirs.go.jp [Central Research Laboratory, Hamamatsu Photonics K.K., 5000 Hirakuchi, Hamakita-ku, Hamamatsu 434-8601 (Japan)

    2011-11-07

    We are developing a novel, general purpose isotropic-3D PET detector X'tal cube which has high spatial resolution in all three dimensions. The research challenge for this detector is implementing effective detection of scintillation photons by covering six faces of a segmented crystal block with silicon photomultipliers (SiPMs). In this paper, we developed the second prototype of the X'tal cube for a proof-of-concept. We aimed at realizing an ultimate detector with 1.0 mm{sup 3} cubic crystals, in contrast to our previous development using 3.0 mm{sup 3} cubic crystals. The crystal block was composed of a 16 x 16 x 16 array of lutetium gadolinium oxyorthosilicate (LGSO) crystals 0.993 x 0.993 x 0.993 mm{sup 3} in size. The crystals were optically glued together without inserting any reflector inside and 96 multi-pixel photon counters (MPPCs, S10931-50P, i.e. six faces each with a 4 x 4 array of MPPCs), each having a sensitive area of 3.0 x 3.0 mm{sup 2}, were optically coupled to the surfaces of the crystal block. Almost all 4096 crystals were identified through Anger-type calculation due to the finely adjusted reflector sheets inserted between the crystal block and light guides. The reflector sheets, which formed a belt of 0.5 mm width, were placed to cover half of the crystals of the second rows from the edges in order to improve identification performance of the crystals near the edges. Energy resolution of 12.7% was obtained at 511 keV with almost uniform light output for all crystal segments thanks to the effective detection of the scintillation photons.

  3. Barrier Infrared Detector (BIRD) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — JPL will design, fabricate, and fully characterize a 640x512 format HOT-BIRD FPA with increased quantum efficiency and extended spectral coverage. Unlike the small...

  4. Cerenkov light identification with Si low-temperature detectors with Neganov-Luke effect-enhanced sensitivity

    CERN Document Server

    Gironi, L; Brofferio, C; Capelli, S; Carniti, P; Cassina, L; Clemenza, M; Cremonesi, O; Faverzani, M; Ferri, E; Fossati, E; Giachero, A; Gotti, C; Maino, M; Margesin, B; Moretti, F; Nucciotti, A; Pavan, M; Pessina, G; Pozzi, S; Previtali, E; Puiu, A; Sisti, M; Terranova, F

    2016-01-01

    A new generation of cryogenic light detectors exploiting Neganov-Luke effect to enhance the thermal signal has been used to detect the Cherenkov light emitted by the electrons interacting in TeO$_{2}$ crystals. With this mechanism a high significance event-by-event discrimination between alpha and beta/gamma interactions at the $^{130}$Te neutrino-less double beta decay Q-value - (2527.515 $\\pm$ 0.013) keV - has been demonstrated. This measurement opens the possibility of drastically reducing the background in cryogenic experiments based on TeO$_{2}$.

  5. High performance SiC detectors for MeV ion beamsgenerated by intense pulsed laser plasmas

    Czech Academy of Sciences Publication Activity Database

    Cutroneo, M.; Musumeci, P.; Zimbone, M.; Torrisi, L.; La Via, F.; Margarone, Daniele; Velyhan, Andriy; Ullschmied, Jiří; Calcagno, L.

    2013-01-01

    Roč. 28, č. 1 (2013), s. 87-93. ISSN 0884-2914 R&D Projects: GA MŠk ED1.1.00/02.0061; GA MŠk EE.2.3.20.0087 Grant ostatní: ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061; OP VK 2 LaserGen(XE) CZ.1.07/2.3.00/20.0087 Institutional support: RVO:68378271 ; RVO:61389021 Keywords : silicon carbide * ion detectors * high power laser Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.815, year: 2013

  6. Effects of Post-SiH4 and Plasma Treatments on Chemical Vapor Deposited Cu Seeds with Chemical Vapor Deposited TiN Barrier in Porous Low Dielectric Constant and Cu Integration

    Science.gov (United States)

    Pyo, Sung Gyu; Park, Shangkyun; Park, Hansoo; Lee, Donghyun

    2011-07-01

    A Cu seed deposited by chemical vapor deposition (CVD) was integrated with a CVD TiN barrier and electroplated Cu in a double level metal interconnect scheme using a dual damascene process. The post-SiH4 treatment of CVD TiN inhibits agglomeration of thin Cu by improving the wettability of Cu seeds as well as reducing the TiN sheet resistance. Post-plasma treatment on CVD Cu seeds decreases impurities in CVD Cu and eliminates interface voids between the CVD Cu seed and electroplated Cu, improving the gap filling properties of electroplated Cu layers. Inherently poor adhesion of the CVD Cu layers between the Cu barrier metal and the electroplated Cu is overcome by CVD TiN post treatments and CVD Cu post-plasma treatment. Bias-thermal-stress (BTS) tests were performed to verify the effect of post-SiH4 treatment. The SiH4 treated CVD TiN barrier and CVD Cu seed show feasibility for 65-nm technology in terms of low via resistance and chain yields.

  7. A New Large-Well 1024x1024 Si:As Detector for the Mid-Infrare

    CERN Document Server

    Mainzer, A K; Stapelbroek, M; Hogue, H; Molyneux, D; Ressler, M; Atkins, E; Reekstin, J; Werner, M; Young, E T

    2005-01-01

    We present a description of a new 1024x1024 Si:As array designed for ground-based use from 5 - 28 microns. With a maximum well depth of 5e6 electrons, this device brings large-format array technology to bear on ground-based mid-infrared programs, allowing entry to the megapixel realm previously only accessible to the near-IR. The multiplexer design features switchable gain, a 256x256 windowing mode for extremely bright sources, and it is two-edge buttable. The device is currently in its final design phase at DRS in Cypress, CA. We anticipate completion of the foundry run in the beginning of 2006. This new array will enable wide field, high angular resolution ground-based follow up of targets found by space-based missions such as the Spitzer Space Telescope and the Widefield Infrared Survey Explorer (WISE).

  8. Novel Photo-Detectors and Photo-Detector Systems

    OpenAIRE

    Danilov, M.

    2008-01-01

    Recent developments in photo-detectors and photo-detector systems are reviewed. The main emphasis is made on Silicon Photo-Multipliers (SiPM) - novel and very attractive photo-detectors. Their main features are described. Properties of detectors manufactured by different producers are compared. Different applications are discussed including calorimeters, muon detection, tracking, Cherenkov light detection, and time of flight measurements.

  9. Study of the sensitivity of neutron sensors consisting of a converter plus Si charged-particle detector

    International Nuclear Information System (INIS)

    With the aim of improving neutron sensors for monitoring external neutron exposure, we have analysed the workings of a converter plus silicon PIN diode detector arrangement. A phenomenological analysis of the conversion and signal generation of different converter materials and their effectiveness is given. The results are compared with experimental measurements. Because of the fundamentally different interactions of thermal neutrons versus high energy neutrons, we study the two species separately. For thermal neutrons, two types of neutron converters were examined, 6LiF (crystalline) and Kodak 10B films. For fast neutrons in the energy range from 1 to 20 MeV hydrogen rich Lucite--PMMA (H8C5O2) and Polyethylene--PE (CH2) converters were studied. For thermal neutrons and a pure 10B-converter the theoretical response in counts/neutron reaches a value of BSTOT=0.0684 and for a pure 6LiF-converter LiFSTOT=0.0543. The corresponding experimental responses are 0.0062 for KODAK 10B film and 0.0223 for 6LiF converters. The difference between theory and experiment is understood by the necessity to use a lower level discriminator to eliminate unwanted counts coming from electrons and gammas. In the case of the 10B converter impurities in the converter material reduce the signal. Our analysis for fast neutrons allows us to calculate the ratio of sensitivity for Polyethylene to Lucite, for which we predict a value of 1.6. For the measured sensitivities for PE and PMMA, using an 241Am-Be neutron source, we obtain the values of 0.00225 and 0.0015 respectively, the ratio being 1.5

  10. Measurement of X-ray spectra using a Lu2(SiO4)O-multipixel-photon detector with changes in the pixel number.

    Science.gov (United States)

    Yamaguchi, Satoshi; Sato, Eiichi; Oda, Yasuyuki; Nakamura, Ryuji; Oikawa, Hirobumi; Yabuushi, Tomonori; Ariga, Hisanori; Ehara, Shigeru

    2015-09-01

    To measure X-ray spectra with high count rates, we developed a detector consisting of a Lu2(SiO4)O [LSO] crystal with a decay time of 40 ns and a multipixel photon counter (MPPC). The photocurrents flowing through the MPPC are converted into voltages and amplified by a high-speed current-voltage amplifier, and event pulses from the amplifier are sent to a multichannel analyzer to measure spectra. We used three MPPCs of 100, 400 and 1600 pixels/mm(2), and the MPPCs were driven under pre-Geiger mode at a temperature of 20 °C. At a tube voltage of 100 kV and a tube current of 5.0 μA, the maximum count rate was 12.8 kilo-counts per second. The event-pulse widths were 200 ns, and the energy resolution was 53% at 59.5 keV using a 100-pixel MPPC. PMID:26046520

  11. Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers

    International Nuclear Information System (INIS)

    Niobium nitride-niobium Josephson tunnel junctions with sputtered amorphous silicon barriers (NbN-αSi-Nb) have been prepared using processing that is fully compatible with integrated circuit fabrication. These junctions are of suitable quality and uniformity for digital circuit and S-I-S detector applications. The junction quality depends critically upon the properties of the NbN surface, and seems to correlate well with the UV/visible reflectivity of this surface

  12. Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    International Nuclear Information System (INIS)

    Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors, fabricated by growing p-and n-type CdTe epilayers on (211) n+-Si substrates using metalorganic vapor-phase epitaxy (MOVPE), were studied by analyzing current-voltage characteristics measured at various temperatures. The diode fabricated shows good rectification properties, however, both forward and reverse biased currents deviate from their ideal behavior. The forward current exhibits typical feature of multi-step tunneling at lower biases; however, becomes space charge limited type when the bias is increased. On the other hand, the reverse current exhibits thermally activated tunneling-type current. It was found that trapping centers at the p-CdTe/n-CdTe junction, which were formed due to the growth induced defects, determine the currents of this diode, and hence limit the performance of the nuclear radiation detectors developed

  13. Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts

    International Nuclear Information System (INIS)

    We report the experimental demonstration of Fermi level depinning using nickel oxide (NiO) as the insulator material in metal-insulator-semiconductor (M-I-S) contacts. Using this contact, we show less than 0.1 eV barrier height for holes in platinum/NiO/silicon (Pt/NiO/p-Si) contact. Overall, the pinning factor was improved from 0.08 (metal/Si) to 0.26 (metal/NiO/Si). The experimental results show good agreement with that obtained from theoretical calculation. NiO offers high conduction band offset and low valence band offset with Si. By reducing Schottky barrier height, this contact can be used as a carrier selective contact allowing hole transport but blocking electron transport, which is important for high efficiency in photonic applications such as photovoltaics and optical detectors.

  14. Heavy-ion fusion below the Coulomb barrier: The systems sup(28,30)Si + sup(58,62,64)Ni and sup(32,34,36)S + sup(58,64)Ni

    Energy Technology Data Exchange (ETDEWEB)

    Stefanini, A.M.; Fortuna, G.; Pengo, R.; Meczynski, W.; Montagnoli, G.; Corradi, L.; Tivelli, A.; Beghini, S.; Signorini, C.; Lunardi, S.

    1986-08-18

    Fusion cross-sections for the 12 systems sup(28,30)Si + sup(58,62,64)Ni and sup(32,34,36)S + sup(58,64)Ni were measured at many energies from well below up to about 1.5 times the Coloumb barriers. The data show large sub-barrier fusion probabilities with strong isotopic dependence. The results of coupled-channel calculations involving the lowest 2/sup +/ and 3/sup -/ levels of both colliding nuclei and the 2-neutron transfer channel are compared with the measured excitation functions. Indications for the importance of the transfer channels are found. Signatures of system-dependent effects of the positive Q-value transfer channels are evidenced, also from a systematic intercomparison of the data.

  15. Heavy-ion fusion below the Coulomb barrier: The systems sup(28,30)Si+sup(58,62,64)Ni and sup(32,34,36)S+sup(58,64)Ni

    International Nuclear Information System (INIS)

    Fusion cross-sections for the 12 systems sup(28,30)Si+sup(58,62,64)Ni and sup(32,34,36)S+sup(58,64)Ni were measured at many energies from well below up to about 1.5 times the Coloumb barriers. The data show large sub-barrier fusion probabilities with strong isotopic dependence. The results of coupled-channel calculations involving the lowest 2+ and 3- levels of both colliding nuclei and the 2-neutron transfer channel are compared with the measured excitation functions. Indications for the importance of the transfer channels are found. Signatures of system-dependent effects of the positive Q-value transfer channels are evidenced, also from a systematic intercomparison of the data. (orig.)

  16. C2H2流量对SiCN 薄膜结构及阻挡性能的影响%Influence of C2H2 Flow Rate on Microstructures and Electronic Properties of SiCN Diffusion Barriers

    Institute of Scientific and Technical Information of China (English)

    张治超; 周继承; 彭银桥

    2011-01-01

    The SiCN films were grown by RF reactive magnetrmn sputtering with acetylene and nitrogen as the reactive gases,and polycrystalline silicon as the target material. The impacts of the film growth conditions,including the C2H2 flow rate, annealing temperature on the properties of the SiCN film were studied. Its microstructures and electronic properties were characterized with Fourier transform infrared spectroscopy, X-ray diffraction, and conventional surface probes.The results show that the C2H2 flow rate and annealing temperature strongly affect its microstructures, dielectric constant and diffusion barrier efficiency. For instance,as C2H2 flow rate increases,the grain size on surfaces of the highly stable,amorphous SiCN film increases. The C-N bonds dominate the surface matrix possibly because of substitution of Si for C atom. Its dielectric constant was estimated to be 4.2 ~ 5.8, depending on contents C and N, and on defect-density of the films. We found that high temperature inter-diffusion and reaction of Cu and Si are responsible for the breakdown of the SiCN diffusion barrier%采用C2H2和N2作为反应气体、多晶Si作为靶材,利用射频磁控溅射系统沉积了SiCN薄膜.利用傅里叶红外光谱仪、X射线衍射仪、四探针测试仪等研究了C2H2流量对薄膜结构、介电常数以及阻挡性能的影响.结果表明,薄膜为非晶结构,1000℃退火下未出现结晶,稳定性很好;随着C2H2流量的增大,薄膜表面颗粒呈现增大趋势;C原子取代Si原子占据薄膜中的网络位置,薄膜形成了以C-N键为主的网络结构;制得的SiCN薄膜介电常数在4.2~5.8之间,C,N含量以及薄膜结构是影响介电性能的关键因素,高温使得Cu穿过薄膜中的缺陷与Si发生互扩散是薄膜阻挡性能失效的主要原因.

  17. SiD Letter of Intent

    CERN Document Server

    Aihara, H; Oreglia, M.; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; Grefe, C.; Klempt, W.; Linssen, L.; Schlatter, D.; Speckmayer, P.; Thom, J.; Yang, J.; Christian, D.C.; Cihangir, S.; Cooper, W.E.; Demarteau, M.; Fisk, H.E.; Garren, L.A.; Krempetz, K.; Kutschke, R.K.; Lipton, R.; Para, A.; Tschirhart, R.; Wenzel, H.; Yarema, R.; Grunewald, M.; Pankov, A.; U., Gomel State Tech.; Dutta, T.; Dauncey, P.D.; Balbuena, J.P.; Fleta, C.; Lozano, M.; Ullan, M.; Christian, G.B.; Faus-Golfe, A.; Fuster, J.; Lacasta, C.; Marinnas, C.; Vos, M.; Duarte, J.; Fernandez, M.; Gonzalez, J.; Jaramillo, R.; Lopez, Virto, A.; Martinez-Eivero, C.; Moya, D.; Ruiz-Mimeno, A.; Vila, I.; Colledani, C.; Dorokhov, A.; Hu-Guo, C.; Winter, M.; Moortgat-Pick, G.; Onoprienko, D.V.; Kim, G.N.; Park, H.; Adloff, C.; Blaha, J.; Blaising, J.-J.; Cap, S.; Chefdeville, M.; Drancourt, C.; Espargiliare, A.; Gaglione, R.; Geffroy, N.; Jacquemier, J.; Karyotakis, Y.; Prast, J.; Vouters, G.; Gronberg, J.; Walston, S.; Wright, D.; Sawyer, L.; Laloum, M.; Ciobanu, C.; Chauveau, J.; Savoy-Navarro, A.; Andricek, L.; Moser, H.-G.; Cowan, R.f.; Fisher, P.; Yamamoto, R.K.; Kenney, ClMl; Boos, E.E.; Merkin, M.; Chen, S.; Chakraborty, D.; Dyshkant, A.; Hedin, D.; Zutshi, V.; Galkin, V.; D'Ascenzo, N.; Ossetski, D.; Saveliev, V.; Kapusta, F.; De Masi, R.; Vrba, V.; Lu, C.; McDonald, K.T.; Smith, A.J.S.; Bortoletto, D.; Coath, R.; Crooks, J.; Damerell, C.; Gibson, M.; Nichols, A.; Stanitzki, M.; Strube, J.; Turchetta, R.; Tyndel, M.; Weber, M.; Worm, S.; Zhang, Z.; Barklow, T.L.; Belymam, A.; Breidenbach, M.; Cassell, R.; Craddock, W.; Deaconu, C.; Dragone, A.; Graf, N.A.; Haller, G.; Herbst, R.; Hewett, J.L.; Jaros, J.A.; Johnson, A.S.; Kim, P.C.; MacFarlane, D.B.; Markiewicz, T.; Maruyama, T.; McCormick, J.; Moffeit, K.; Neal, H.A.; Nelson, T.K.; Oriunno, M.; Partridge, R.; Peskin, M.E.; Rizzo, T.G.; Rowson, P.; Su, D.; Woods, M.; Chakrabarti, S.; Dieguez, A.; Garrido, Ll.; Kaminski, J.; Conway, J.S.; Chertok, M.; Gunion, J.; Holbrook, B.; Lander, R.L.; Tripathi, S.M.; Fadeyev, V.; Schumm, B.A.; Oreglia, M.; Gill, J.; Nauenberg, U.; Oleinik, G.; Wagner, S.R.; Ranjan, K.; Shivpuri, R.; Varner, G.S.; Orava, R.; Van Kooten, R.; Bilki, B.; Charles, M.; Kim, T.J.; Mallik, U.; Norbeck, E.; Onel, Y.; Brau, B.P.; Willocq, S.; Taylor, G.N.; Riles, Keith; Yang, H.-J.; Kriske, R.; Cremaldi, L.; Rahmat, R.; Lastovicka-Medin, G.; Seidel, S.; Hildreth, M.D.; Wayne, M.; Brau, J.E.; Frey, R.; Sinev, N.; Strom, D.M.; Torrence, E.; Banda, Y.; Burrows, P.N.; Devetak, E.; Foster, B.; Lastovicka, T.; Li, Y.-M.; Nomerotski, A.; Riera-Babures, J.; Vilasis-Cardona, X.; Manly, S.; Adeva, B.; Iglesias Escudero, C.; Vazquez Regueiro, P.; Saborido Silva, J.J.; Gallas Torreira, A.; Gao, D.; Jie, W.; Jungfeng, Y.; Li, C.; Liu, S.; Liu, Y.; Sun, Y.; Wang, Q.; Yi, J.; Yonggang, W.; Zhao, Z.; De, K.; Farbin, A.; Park, S.; Smith, J.; White, A.P.; Yu, J.; Lou, X.C.; Abe, T.; Aihara, H.; Iwasaki, M.; Lubatti, H.J.; Band, H.R.; Feyzi, F.; Prepost, R.; Karchin, P.E.; Milstene, C.; Baltay, C.; Dhawan, S.; Kwon, Y.-J.

    2009-01-01

    Letter of intent describing SiD (Silicon Detector) for consideration by the International Linear Collider IDAG panel. This detector concept is founded on the use of silicon detectors for vertexing, tracking, and electromagnetic calorimetry. The detector has been cost-optimized as a general-purpose detector for a 500 GeV electron-positron linear collider.

  18. Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and/or manipulation of N{sub eff} by selective filling of radiation-induced traps at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Dezillie, B.; Li, Z. [Brookhaven National Lab., Upton, NY (United States); Eremin, V. [Academy of Science of Russia (Russian Federation). A.F. Ioffe Physico-Technical Inst.; Bruzzi, M.; Pirollo, S. [Dipt. di Energetica, Firenze (Italy); Pandey, S.U. [Wayne State Univ., Detroit, MI (United States); Li, C.J. [Chinese Academy of Science, Beijing (China). Inst. of Semiconductors

    1999-06-01

    Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence ({Phi}{sub inv}) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k{Omega}cm at high fluences, independent of the initial resistivity and material type. However, the fluence ({Phi}{sub s}), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of {Phi}{sub s} is in the same order of that of {Phi}{sub inv} for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N{sub eff}) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

  19. Influence of isothermal exposure on microstructural changes resulting in delamination of eutectic Al2O3+ZrO2+SiO2 thermal barrier coatings

    Czech Academy of Sciences Publication Activity Database

    Jech, D.; Čelko, L.; Chráska, Tomáš; Slámečka, K.; Klakurková, L.; Dubský, Jiří; Švejcar, J.

    Ostrava : Tanger Ltd, 2014, s. 885-889. ISBN 978-80-87294-54-3. [Metal 2014. International Conference on Metallurgy and Materials /23./. Brno (CZ), 21.05.2014-23.05.2014] Institutional support: RVO:61389021 Keywords : Electron microscopy-scanning * Heat treatment * Image analysis * Thermal barrier coatings * Thermal plasma spraying Subject RIV: JK - Corrosion ; Surface Treatment of Materials

  20. Behaviour of semiconductor nuclear-particle detectors

    International Nuclear Information System (INIS)

    Experimental and theoretical studies of the behaviour of semiconductor nuclear-particle detectors have been carried out over the temperature range of 0.2oK to 300oK. A simple theoretical model for the detector behaviour, which is found to describe the observed behaviour over a wide range of parameters, is presented. The importance of semiconductor purity and bias voltage in connection with pulse height, pulse rise-time and detector area is discussed. Empirical studies of noise and energy resolution indicate that for alpha particles the smallest observed peak-widths are substantially larger than those expected on the basis of electrical noise from the detector and amplifier. Equivalent noise values of ≤ 3 keV full-width at half maximum (FWHM) have been found for a 40-mm2 silicon surface-barrier detector at 77oK. Semiconductor detectors exhibit a ''pulse-height defect'' for fission fragments. There is evidence that this defect is not caused by a ''dead layer''. If electric fields which are insufficient to insure complete ''collection'' are responsible for the defect, the necessary minimum field (at the surface) is > 3 x 104 V/cm for fission fragments, as compared to the value of 2 x 103 V/cm which is found necessary in the case of alpha particles in Ge and Si. Detailed considerations regarding pulse rise-time at the amplifier have shown that in high-resistivity material both the ''dielectric'' relaxation time and the resistance associated with the undepleted base material can play an important role. A quantative description of the effect of detector and amplifier parameters on the shapes and rise-times associated with the pulse are presented. The advantages and problems associated with the use of surface-barrier detectors in several unique low-temperature nuclear-alignment experiments are discussed. These experiments involved fission-fragment angular distributions and resolution of alpha-fine structure with long-term stability. Matched expansion