Symmetry-Driven Band Gap Engineering in Hydrogen Functionalized Graphene
DEFF Research Database (Denmark)
Jørgensen, Jakob Holm; Grubisic Cabo, Antonija; Balog, Richard;
2016-01-01
Band gap engineering in hydrogen functionalized graphene is demonstrated by changing the symmetry of the functionalization structures. Small differences in hydrogen adsorbate binding energies on graphene on Ir(111) allow tailoring of highly periodic functionalization structures favoring one disti...
Band Gap Engineering of Two-Dimensional Nitrogene
Li, Jie-Sen; Wang, Wei-Liang; Yao, Dao-Xin
2016-01-01
In our previous study, we have predicted the novel two-dimensional honeycomb monolayers of pnictogen. In particular, the structure and properties of the honeycomb monolayer of nitrogen, which we call nitrogene, are very unusual. In this paper, we make an in-depth investigation of its electronic structure. We find that the band structure of nitrogene can be engineered in several ways: controlling the stacking of monolayers, application of biaxial tensile strain, and application of perpendicular electric field. The band gap of nitrogene is found to decrease with the increasing number of layers. The perpendicular electric field can also reduce the band gap when it is larger than 0.18 V/Å, and the gap closes at 0.35 V/Å. A nearly linear dependence of the gap on the electric field is found during the process. Application of biaxial strain can decrease the band gap as well, and eventually closes the gap. After the gap-closing, we find six inequivalent Dirac points in the Brillouin zone under the strain between 17% and 28%, and the nitrogene monolayer becomes a Dirac semimetal. These findings suggest that the electronic structure of nitrogene can be modified by several techniques, which makes it a promising candidate for electronic devices. PMID:27680297
Engineering the hypersonic phononic band gap of hybrid Bragg stacks.
Schneider, Dirk; Liaqat, Faroha; El Boudouti, El Houssaine; El Hassouani, Youssef; Djafari-Rouhani, Bahram; Tremel, Wolfgang; Butt, Hans-Jürgen; Fytas, George
2012-06-13
We report on the full control of phononic band diagrams for periodic stacks of alternating layers of poly(methyl methacrylate) and porous silica combining Brillouin light scattering spectroscopy and theoretical calculations. These structures exhibit large and robust on-axis band gaps determined by the longitudinal sound velocities, densities, and spacing ratio. A facile tuning of the gap width is realized at oblique incidence utilizing the vector nature of the elastic wave propagation. Off-axis propagation involves sagittal waves in the individual layers, allowing access to shear moduli at nanoscale. The full theoretical description discerns the most important features of the hypersonic one-dimensional crystals forward to a detailed understanding, a precondition to engineer dispersion relations in such structures.
Photonic band gap engineering in 2D photonic crystals
Indian Academy of Sciences (India)
Yogita Kalra; R K Sinha
2006-12-01
The polarization-dependent photonic band gaps (TM and TE polarizations) in two-dimensional photonic crystals with square lattices composed of air holes in dielectric and vice versa i.e., dielectric rods in air, using the plane-wave expansion method are investigated. We then study, how the photonic band gap size is affected by the changing ellipticity of the constituent air holes/dielectric rods. It is observed that the size of the photonic band gap changes with changing ellipticity of the constituent air holes/dielectric rods. Further, it is reported, how the photonic band gap size is affected by the change in the orientation of the constituent elliptical air holes/dielectric rods in 2D photonic crystals.
Band gap engineering of indium zinc oxide by nitrogen incorporation
Energy Technology Data Exchange (ETDEWEB)
Ortega, J.J., E-mail: jjosila@hotmail.com [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esq. Paseo la Bufa, Fracc. Progreso, C.P. 98060 Zacatecas (Mexico); Doctorado Institucional de Ingeniería y Ciencia de Materiales, Universidad Autónoma de San Luis Potosí, Av. Salvador Nava, Zona Universitaria, C.P. 78270 San Luis Potosí (Mexico); Aguilar-Frutis, M.A.; Alarcón, G. [Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional, Unidad Legaría, Calz. Legaría No. 694, Col. Irrigación, C.P. 11500 México D.F. (Mexico); Falcony, C. [Departamento de Física, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional campus Zacatenco, Av. Instituto Politécnico Nacional 2508, Col. San Pedro Zacatenco, C.P. 07360 México D.F. (Mexico); and others
2014-09-15
Highlights: • IZON thin films were deposited by RF reactive sputtering at room temperature. • The effects of nitrogen on physical properties of IZO were analyzed. • Optical properties of IZON were studied by SE and UV–vis spectroscopy. • Adachi and classical parameters were quantitative and qualitatively congruent. • Nitrogen induces a gradual narrowing band gap from 3.5 to 2.5 eV on IZON films. - Abstract: The effects of nitrogen incorporation in indium zinc oxide films, as grown by RF reactive magnetron sputtering, on the structural, electrical and optical properties were studied. It was determined that the variation of the N{sub 2}/Ar ratio, in the reactive gas flux, was directly proportional to the nitrogen percentage measured in the sample, and the incorporated nitrogen, which substituted oxygen in the films induces changes in the band gap of the films. This phenomenon was observed by measurement of absorption and transmission spectroscopy in conjunction with spectral ellipsometry. To fit the ellipsometry spectra, the classical and Adachi dispersion models were used. The obtained optical parameters presented notable changes related to the increment of the nitrogen in the film. The band gap narrowed from 3.5 to 2.5 eV as the N{sub 2}/Ar ratio was increased. The lowest resistivity obtained for these films was 3.8 × 10{sup −4} Ω cm with a carrier concentration of 5.1 × 10{sup 20} cm{sup −3}.
{ital In Situ} Band Gap Engineering of Carbon Nanotubes
Energy Technology Data Exchange (ETDEWEB)
Crespi, V.H.; Cohen, M.L. [Department of Physics, University of California at Berkeley, Berkeley, California 94720, and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Rubio, A. [Departamento de Fisica Teorica, Universidad de Valladolid, E-47011 Valladolid (Spain)
1997-09-01
Bond rotation defects close the gap in large-gap nanotubes, open the gap in small-gap nanotubes, and increase the density of states in metallic nanotubes. Not only are these defects likely to be present in as-grown nanotubes, but they could be introduced locally into intact nanotubes, thereby opening a new road towards device applications. {copyright} {ital 1997} {ital The American Physical Society}
2015-03-20
successfully to realise the full applications of graphene? What is the current status of the graphene based devices or Electronics ? How the graphene...gap value has increased to 1.5eV. It is reflected in the density of states (Fig.20c). The nitrogen atoms are at a distance of 5Ȧ. And there is a...completely modified.The calculation of surface doping of graphene with S is repeated with 96 atom simulation cell. The band gap value is 0.7 eV. The value of
Band gap engineering in polymers through chemical doping and applied mechanical strain
Lanzillo, Nicholas A.; Breneman, Curt M.
2016-08-01
We report simulations based on density functional theory and many-body perturbation theory exploring the band gaps of common crystalline polymers including polyethylene, polypropylene and polystyrene. Our reported band gaps of 8.6 eV for single-chain polyethylene and 9.1 eV for bulk crystalline polyethylene are in excellent agreement with experiment. The effects of chemical doping along the polymer backbone and side-groups are explored, and the use mechanical strain as a means to modify the band gaps of these polymers over a range of several eV while leaving the dielectric constant unchanged is discussed. This work highlights some of the opportunities available to engineer the electronic properties of polymers with wide-reaching implications for polymeric dielectric materials used for capacitive energy storage.
Band gap engineering of zinc selenide thin films through alloying with cadmium telluride.
Al-Kuhaili, M F; Kayani, A; Durrani, S M A; Bakhtiari, I A; Haider, M B
2013-06-12
This work investigates band gap engineering of zinc selenide (ZnSe) thin films. This was achieved by mixing ZnSe with cadmium telluride (CdTe). The mass ratio (x) of CdTe in the starting material was varied in the range x = 0-0.333. The films were prepared using thermal evaporation. The chemical composition of the films was investigated through energy dispersive spectroscopy and Rutherford backscattering spectrometry. Structural analysis was carried out using X-ray diffraction and atomic force microscopy. Normal incidence transmittance and reflectance were measured over the wavelength range 300-1300 nm. The absorption coefficients and band gaps were determined from these spectrophotometric measurements. The band gap monotonically decreased from 2.58 eV (for x = 0) to 1.75 eV (for x = 0.333). Photocurrent measurements indicated that the maximum current density was obtained for films with x = 0.286. A figure of merit, based on crystallinity, band gap, and photocurrent, was defined. The optimum characteristics were obtained for the films with x = 0.231, for which the band gap was 2.14 eV.
Band Gap Engineering and Layer-by-Layer Band Gap Mapping of Selenium-doped Molybdenum Disulfide
Energy Technology Data Exchange (ETDEWEB)
Gong, Yongji [Rice University; Liu, Zheng [Rice University; Lupini, Andrew R [ORNL; Lin, Junhao [ORNL; Pantelides, Sokrates T [ORNL; Pennycook, Stephen J [ORNL; Zhou, Wu [ORNL; Ajayan, Pullikel M [Rice University
2014-01-01
Ternary two-dimensional dichalcogenide alloys exhibit compositionally modulated electronic structure and hence, control of dopant concentration within each layer of these layered compounds provides a powerful way to modify their properties. The challenge then becomes quantifying and locating the dopant atoms within each layer in order to better understand and fine-tune the desired properties. Here we report the synthesis of selenium substitutionally doped molybdenum disulfide atomic layers, with a broad range of selenium concentrations, resulting in band gap modulations of over 0.2 eV. Atomic scale chemical analysis using Z-contrast imaging provides direct maps of the dopant atom distribution in individual MoS2 layers and hence a measure of the local band gaps. Furthermore, in a bilayer structure, the dopant distribution of each layer is imaged independently. We demonstrate that each layer in the bilayer contains similar doping levels, randomly distributed, providing new insights into the growth mechanism and alloying behavior in two-dimensional dichalcogenide atomic layers. The results show that growth of uniform, ternary, two-dimensional dichalcogenide alloy films with tunable electronic properties is feasible.
Effect of band gap engineering in anionic-doped TiO2 photocatalyst
Samsudin, Emy Marlina; Abd Hamid, Sharifah Bee
2017-01-01
A simple yet promising strategy to modify TiO2 band gap was achieved via dopants incorporation which influences the photo-responsiveness of the photocatalyst. The mesoporous TiO2 was successfully mono-doped and co-doped with nitrogen and fluorine dopants. The results indicate that band gap engineering does not necessarily requires oxygen substitution with nitrogen or/and fluorine, but from the formation of additional mid band and Ti3+ impurities states. The formation of oxygen vacancies as a result of modified color centres and Ti3+ ions facilitates solar light absorption and influences the transfer, migration and trapping of the photo-excited charge carriers. The synergy of dopants in co-doped TiO2 shows better optical properties relative to single N and F doped TiO2 with c.a 0.95 eV band gap reduction. Evidenced from XPS, the synergy between N and F in the co-doped TiO2 uplifts the valence band towards the conduction band. However, the photoluminescence data reveals poorer electrons and holes separation as compared to F-doped TiO2. This observation suggests that efficient solar light harvesting was achievable via N and F co-doping, but excessive defects could act as charge carriers trapping sites.
Engineering of the band gap and optical properties of thin films of yttrium hydride
Energy Technology Data Exchange (ETDEWEB)
You, Chang Chuan; Mongstad, Trygve; Maehlen, Jan Petter; Karazhanov, Smagul, E-mail: smagulk@ife.no [Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway)
2014-07-21
Thin films of oxygen-containing yttrium hydride show photochromic effect at room temperature. In this work, we have studied structural and optical properties of the films deposited at different deposition pressures, discovering the possibility of engineering the optical band gap by variation of the oxygen content. In sum, the transparency of the films and the wavelength range of photons triggering the photochromic effect can be controlled by variation of the deposition pressure.
MoS2-WSe2 Hetero Bilayer: Possibility of Mechanical Strain Induced Band Gap Engineering
Sharma, Munish; Kumar, Ashok; Ahluwalia, P. K.
2014-03-01
The tunability of band gap in two-dimensional (2D) hetero-bilayers of MoS2-WSe2 with applied mechanical strains (in-plane and out-of-plane) in two different types of stackings (AA and AB) have been investigated in the framework of density functional theory (DFT). The in-plane biaxial tensile strain is found to reduce electronic band gap monotonically and rendered considered bilayer into metal at 6% of applied strain. The transition pressure required for complete semiconductor-to-metal transition is found to be of 7.89 GPa while tensile strength of the reported hetero-bilayer has been calculated 10 GPa at 25% strain. In case of vertical compression strain, 16 GPa pressure has been calculated for complete semiconductor-to-metal transition. The band-gap deformation potentials and effective masses (electron and hole) have been found to posses strong dependence on the type of applied strain. Such band gap engineering in controlled manner (internal control by composition and external control by applied strain) makes the considered hetero-bilayer as a strong candidate for the application in variety of nano scale devices.
Steric engineering of metal-halide perovskites with tunable optical band gaps.
Filip, Marina R; Eperon, Giles E; Snaith, Henry J; Giustino, Feliciano
2014-12-15
Owing to their high energy-conversion efficiency and inexpensive fabrication routes, solar cells based on metal-organic halide perovskites have rapidly gained prominence as a disruptive technology. An attractive feature of perovskite absorbers is the possibility of tailoring their properties by changing the elemental composition through the chemical precursors. In this context, rational in silico design represents a powerful tool for mapping the vast materials landscape and accelerating discovery. Here we show that the optical band gap of metal-halide perovskites, a key design parameter for solar cells, strongly correlates with a simple structural feature, the largest metal-halide-metal bond angle. Using this descriptor we suggest continuous tunability of the optical gap from the mid-infrared to the visible. Precise band gap engineering is achieved by controlling the bond angles through the steric size of the molecular cation. On the basis of these design principles we predict novel low-gap perovskites for optimum photovoltaic efficiency, and we demonstrate the concept of band gap modulation by synthesising and characterising novel mixed-cation perovskites.
Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering.
Wu, Lihua; Yang, Jiong; Zhang, Tiansong; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui
2016-03-01
Rashba semiconductors are of great interest in spintronics, superconducting electronics and thermoelectrics. Bulk BiTeI is a new Rashba system with a giant spin-split band structure. 2D-like thermoelectric response has been found in BiTeI. However, as optimizing the carrier concentration, the bipolar effect occurs at elevated temperature and deteriorates the thermoelectric performance of BiTeI. In this paper, band gap engineering in Rashba semiconductor BiTeI through Br-substitution successfully reduces the bipolar effect and improves the thermoelectric properties. By utilizing the optical absorption and Burstein-Moss-effect analysis, we find that the band gap in Rashba semiconductor BiTeI increases upon bromine substitution, which is consistent with theoretical predictions. Bipolar transport is mitigated due to the larger band gap, as the thermally-activated minority carriers diminish. Consequently, the Seebeck coefficient keeps increasing with a corresponding rise in temperature, and thermoelectric performance can thus be enhanced with a ZT = 0.5 at 570 K for BiTeI0.88Br0.12.
Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering
Wu, Lihua; Yang, Jiong; Zhang, Tiansong; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui
2016-03-01
Rashba semiconductors are of great interest in spintronics, superconducting electronics and thermoelectrics. Bulk BiTeI is a new Rashba system with a giant spin-split band structure. 2D-like thermoelectric response has been found in BiTeI. However, as optimizing the carrier concentration, the bipolar effect occurs at elevated temperature and deteriorates the thermoelectric performance of BiTeI. In this paper, band gap engineering in Rashba semiconductor BiTeI through Br-substitution successfully reduces the bipolar effect and improves the thermoelectric properties. By utilizing the optical absorption and Burstein-Moss-effect analysis, we find that the band gap in Rashba semiconductor BiTeI increases upon bromine substitution, which is consistent with theoretical predictions. Bipolar transport is mitigated due to the larger band gap, as the thermally-activated minority carriers diminish. Consequently, the Seebeck coefficient keeps increasing with a corresponding rise in temperature, and thermoelectric performance can thus be enhanced with a ZT = 0.5 at 570 K for BiTeI0.88Br0.12.
Band gap engineering in silicene: A theoretical study of density functional tight-binding theory
Zaminpayma, Esmaeil; Nayebi, Payman
2016-10-01
In this work, we performed first principles calculations based on self-consistent charge density functional tight-binding to investigate different mechanisms of band gap tuning of silicene. We optimized structures of silicene sheet, functionalized silicene with H, CH3 and F groups and nanoribbons with the edge of zigzag and armchair. Then we calculated electronic properties of silicene, functionalized silicene under uniaxial elastic strain, silicene nanoribbons and silicene under external electrical fields. It is found that the bond length and buckling value for relaxed silicene is agreeable with experimental and other theoretical values. Our results show that the band gap opens by functionalization of silicene. Also, we found that the direct band gap at K point for silicene changed to the direct band gap at the gamma point. Also, the functionalized silicene band gap decrease with increasing of the strain. For all sizes of the zigzag silicene nanoribbons, the band gap is near zero, while an oscillating decay occurs for the band gap of the armchair nanoribbons with increasing the nanoribbons width. At finally, it can be seen that the external electric field can open the band gap of silicene. We found that by increasing the electric field magnitude the band gap increases.
Crystal Structure and Band Gap Engineering in Polyoxometalate-Based Inorganic-Organic Hybrids.
Roy, Soumyabrata; Sarkar, Sumanta; Pan, Jaysree; Waghmare, Umesh V; Dhanya, R; Narayana, Chandrabhas; Peter, Sebastian C
2016-04-04
We have demonstrated engineering of the electronic band gap of the hybrid materials based on POMs (polyoxometalates), by controlling its structural complexity through variation in the conditions of synthesis. The pH- and temperature-dependent studies give a clear insight into how these experimental factors affect the overall hybrid structure and its properties. Our structural manipulations have been successful in effectively tuning the optical band gap and electronic band structure of this kind of hybrids, which can find many applications in the field of photovoltaic and semiconducting devices. We have also addressed a common crystallographic disorder observed in Keggin-ion (one type of heteropolyoxometalate [POMs])-based hybrid materials. Through a combination of crystallographic, spectroscopic, and theoretical analysis of four new POM-based hybrids synthesized with tactically varied reaction conditions, we trace the origin and nature of the disorder associated with it and the subtle local structural coordination involved in its core picture. While the crystallography yields a centrosymmetric structure with planar coordination of Si, our analysis with XPS, IR, and Raman spectroscopy reveals a tetrahedral coordination with broken inversion symmetry, corroborated by first-principles calculations.
Double-hole-mediated coupling of dopants and its impact on band gap engineering in TiO2.
Yin, Wan-Jian; Wei, Su-Huai; Al-Jassim, Mowafak M; Yan, Yanfa
2011-02-11
A double-hole-mediated coupling of dopants is unraveled and confirmed in TiO2 by density-functional theory calculations. We find that when a dopant complex on neighboring oxygen sites in TiO2 has net two holes, the holes will strongly couple to each other through significant lattice relaxation. The coupling results in the formation of fully filled impurity bands lying above the valence band of TiO2, leading to a much more effective band gap reduction than that induced by monodoping or conventional donor-acceptor codoping. Our results suggest a new path for semiconductor band gap engineering.
Band gap engineering in finite elongated graphene nanoribbon heterojunctions: Tight-binding model
Directory of Open Access Journals (Sweden)
Benjamin O. Tayo
2015-08-01
Full Text Available A simple model based on the divide and conquer rule and tight-binding (TB approximation is employed for studying the role of finite size effect on the electronic properties of elongated graphene nanoribbon (GNR heterojunctions. In our model, the GNR heterojunction is divided into three parts: a left (L part, middle (M part, and right (R part. The left part is a GNR of width WL, the middle part is a GNR of width WM, and the right part is a GNR of width WR. We assume that the left and right parts of the GNR heterojunction interact with the middle part only. Under this approximation, the Hamiltonian of the system can be expressed as a block tridiagonal matrix. The matrix elements of the tridiagonal matrix are computed using real space nearest neighbor orthogonal TB approximation. The electronic structure of the GNR heterojunction is analyzed by computing the density of states. We demonstrate that for heterojunctions for which WL = WR, the band gap of the system can be tuned continuously by varying the length of the middle part, thus providing a new approach to band gap engineering in GNRs. Our TB results were compared with calculations employing divide and conquer rule in combination with density functional theory (DFT and were found to agree nicely.
Band-gap engineering of functional perovskites through quantum confinement and tunneling
DEFF Research Database (Denmark)
Castelli, Ivano Eligio; Pandey, Mohnish; Thygesen, Kristian Sommer
2015-01-01
An optimal band gap that allows for a high solar-to-fuel energy conversion efficiency is one of the key factors to achieve sustainability. We investigate computationally the band gaps and optical spectra of functional perovskites composed of layers of the two cubic perovskite semiconductors BaSnO3...... and BaTaO2N. Starting from an indirect gap of around 3.3 eV for BaSnO3 and a direct gap of 1.8 eV for BaTaO2N, different layerings can be used to design a direct gap of the functional perovskite between 2.3 and 1.2 eV. The variations of the band gap can be understood in terms of quantum confinement...
Functionally Graded Thermoelectric Material though One Step Band Gap and Dopant Engineering
DEFF Research Database (Denmark)
Jensen, Ellen Marie; Borup, Kasper Andersen; Cederkrantz, Daniel;
For a given doping level a thermoelectric material is optimized for a given temperature. Thermoelectric modules, however, operates over large gradients in temperature. To circumvent this problem we have synthesized a functionally graded thermoelectric material optimized for large temperature...... gradients. It has previously been shown that a large functionally graded thermoelectric single crystal can be synthesized by the Czochralski method (1). Utilizing element gradients inherent to the Czochralski process we have synthesized a Ge1-xSix:B crystal with a continuously varying x, band gap......, and dopant concentration. Parameters relevant to the thermoelectric properties have been determined along the pulling direction. All of these properties exhibit the wanted gradient. It has thereby been shown that engineering of the electrical contributions to the thermoelectric properties of a material...
Photonic band-gap engineering in UV fiber gratings by the arc discharge technique.
Cusano, Andrea; Iadicicco, Agostino; Paladino, Domenico; Campopiano, Stefania; Cutolo, Antonello
2008-09-29
Localized heat treatments combined with local non-adiabatic tapering is proposed as suitable tool for the engineering of photonic band-gaps in UV-written fiber Bragg gratings (FBGs). In particular, here, we propose the use of the electric arc discharge to achieve localized defects along the FBG structure, however differently from previously reported works, we demonstrate how this post processing tool properly modified can be exploited to achieve the full control of the spectral characteristics of the final device. Also, we show how the suitable choice of the grating features and the correct selection of the defect geometry can be efficiently used to achieve interesting features for both communication and sensing applications.
Resonant tunneling diode based on band gap engineered graphene antidot structures
Palla, Penchalaiah; Ethiraj, Anita S.; Raina, J. P.
2016-04-01
The present work demonstrates the operation and performance of double barrier Graphene Antidot Resonant Tunnel Diode (DBGA-RTD). Non-Equilibrium Green's Function (NEGF) frame work with tight-binding Hamiltonian and 2-D Poisson equations were solved self-consistently for device study. The interesting feature in this device is that it is an all graphene RTD with band gap engineered graphene antidot tunnel barriers. Another interesting new finding is that it shows negative differential resistance (NDR), which involves the resonant tunneling in the graphene quantum well through both the electron and hole bound states. The Graphene Antidot Lattice (GAL) barriers in this device efficiently improved the Peak to Valley Ratio to approximately 20 even at room temperature. A new fitting model is developed for the number of antidots and their corresponding effective barrier width, which will help in determining effective barrier width of any size of actual antidot geometry.
Chegel, Raad
2016-06-01
By using the third nearest neighbor modified tight binding (3NN-TB) method, the electronic structure and band gap of BNNRs under transverse electric fields are explored. The band gap of the BNNRs has a decreasing with increasing the intensity of the applied electric field, independent on the ribbon edge types. Furthermore, an analytic model for the dependence of the band gap in armchair and zigzag BNNRs on the electric field is proposed. The reduction of E g is similar for some N a armchair and N z zigzag BNNRs independent of their edges.
Band gap engineering of N-alloyed Ga2O3 thin films
Directory of Open Access Journals (Sweden)
Dongyu Song
2016-06-01
Full Text Available The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH3 and Ar gas for 60 minutes. Then they were annealed in NH3 ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinic and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p -Ga3d orbits and formation of hexagonal structure.
Mondal, Rajib
2009-01-01
Removing the adjacent thiophene groups around the acceptor core in low band gap polymers significantly enhances solar cell efficiency through increasing the optical absorption and raising the ionization potential of the polymer. © 2009 The Royal Society of Chemistry.
Tuning the light emission properties by band gap engineering in hybrid lead halide perovskite.
D'Innocenzo, Valerio; Srimath Kandada, Ajay Ram; De Bastiani, Michele; Gandini, Marina; Petrozza, Annamaria
2014-12-24
We report about the relationship between the morphology and luminescence properties of methylammonium lead trihalide perovskite thin films. By tuning the average crystallite dimension in the film from tens of nanometers to a few micrometers, we are able to tune the optical band gap of the material along with its photoluminescence lifetime. We demonstrate that larger crystallites present smaller band gap and longer lifetime, which correlates to a smaller radiative bimolecular recombination coefficient. We also show that they present a higher optical gain, becoming preferred candidates for the realization of CW lasing devices.
Band Gap Engineering in a 2D Material for Solar-to-Chemical Energy Conversion.
Hu, Jun; Guo, Zhenkun; Mcwilliams, Peter E; Darges, John E; Druffel, Daniel L; Moran, Andrew M; Warren, Scott C
2016-01-13
The electronic structure of 2D semiconductors depends on their thickness, providing new opportunities to engineer semiconductors for energy conversion, electronics, and catalysis. Here we show how a 3D semiconductor, black phosphorus, becomes active for solar-to-chemical energy conversion when it is thinned to a 2D material. The increase in its band gap, from 0.3 eV (3D) to 2.1 eV (2D monolayer), is accompanied by a 40-fold enhancement in the formation of chemical products. Despite this enhancement, smaller flakes also have shorter excited state lifetimes. We deduce a mechanism in which recombination occurs at flake edges, while the "van der Waals" surface of black phosphorus bonds to chemical intermediates and facilitates electron transfer. The unique properties of black phosphorus highlight its potential as a customizable material for solar energy conversion and catalysis, while also allowing us to identify design rules for 2D photocatalysts that will enable further improvements in these materials.
Band gap engineering in penta-graphene by substitutional doping: first-principles calculations
Berdiyorov, G. R.; Dixit, G.; Madjet, M. E.
2016-11-01
Using density functional theory, we study the structure, electronic properties and partial charges of a new carbon allotrope—penta-graphene (PG)—substitutionally doped by Si, B and N. We found that the electronic bandgap of PG can be tuned down to 0.2 eV due to carbon substitutions. However, the value of the band gap depends on the type and location of the dopants. For example, the strongest reduction of the band gap is obtained for Si substitutions on the top (bottom) plane of PG, whereas the substitution in the middle plane of PG has a smaller effect on the band gap of the material. Surface termination with fluorine and hydroxyl groups results in an increase of the band gap together with considerable changes in electronic and atomic partial charge distribution in the system. Our findings, which are robust against the use of different exchange-correlation functionals, indicate the possibility of tuning the bandgap of the material to make it suitable for optoelectronic and photovoltaic applications.
DEFF Research Database (Denmark)
Zhukovsky, Sergei; Orlov, Alexey A.; Babicheva, Viktoriia E.;
2014-01-01
) on a larger, wavelength scale, the propagation of volume plasmon polaritons in the resulting multiscale hyperbolic metamaterials is subject to photonic-band-gap phenomena. A great degree of control over such plasmons can be exerted by varying the superstructure geometry. When this geometry is periodic, stop...... bands due to Bragg reflection form within the volume plasmonic band. When a cavity layer is introduced in an otherwise periodic superstructure, resonance peaks of the Fabry-Perot nature are present within the stop bands. More complicated superstructure geometries are also considered. For example......, fractal Cantor-like multiscale metamaterials are found to exhibit characteristic self-similar spectral signatures in the volume plasmonic band. Multiscale hyperbolic metamaterials are shown to be a promising platform for large-wave-vector bulk plasmonic waves, whether they are considered for use as a kind...
Solid-State Nanopore Confinement for Band Gap Engineering of Metal-Halide Perovskites
Demchyshyn, Stepan; Groiss, Heiko; Heilbrunner, Herwig; Ulbricht, Christoph; Apaydin, Dogukan; Rütt, Uta; Bertram, Florian; Hesser, Günter; Scharber, Markus; Nickel, Bert; Sariciftci, Niyazi Serdar; Bauer, Siegfried; Głowacki, Eric Daniel; Kaltenbrunner, Martin
2016-01-01
Tuning the band gap of semiconductors via quantum size effects launched a technological revolution in optoelectronics, advancing solar cells, quantum dot light-emitting displays, and solid state lasers. Next generation devices seek to employ low-cost, easily processable semiconductors. A promising class of such materials are metal-halide perovskites, currently propelling research on emerging photovoltaics. Their narrow band emission permits very high colour purity in light-emitting devices and vivid life-like displays paired with low-temperature processing through printing-compatible methods. Success of perovskites in light-emitting devices is conditional upon finding reliable strategies to obtain tunability of the band gap. So far, colour can be tuned chemically by mixed halide stoichiometry, or by synthesis of colloidal particles. Here we introduce a general strategy of controlling shape and size of perovskite nanocrystallites (less than 10 nm) in domains that exhibit strong quantum size effects. Without ma...
Cassagne, D.
Photonic band gap materials Photonic band gap materials are periodic dielectric structures that control the propagation of electromagnetic waves. We describe the plane wave method, which allows to calculate the band structures of photonic crystals. By symmetry analysis and a perturbative approach, we predict the appearance of the low energy photonic band gaps of hexagonal structures. We propose new two-dimensional structures called graphite and boron nitride. Using a transfer matrix method, we calculate the transmission of the graphite structure and we show the crucial role of the coupling with external modes. We study the appearance of allowed modes in the photonic band gap by the introduction of localized defects in the periodicity. Finally, we discuss the properties of opals formed by self-organized silica microspheres, which are very promising for the fabrication of three-dimensional photonic crystals. Les matériaux à bandes interdites photoniques sont des structures diélectriques périodiques qui contrôlent la propagation des ondes électromagnétiques. Nous décrivons la méthode des ondes planes qui permet de calculer les structures de bandes des cristaux photoniques. Par une analyse de la symétrie et une approche perturbative, nous précisons les conditions d'existence des bandes interdites de basse énergie. Nous proposons de nouvelles structures bidimensionnelles appelées graphite et nitrure de bore. Grâce à une méthode de matrices de transfert, nous calculons la transmission de la structure graphite et nous mettons en évidence le rôle fondamental du couplage avec les modes extérieurs. Nous étudions l'apparition de modes permis dans la bande interdite grâce à l'introduction de défauts dans la périodicité. Enfin, nous discutons les propriétés des opales constituées de micro-billes de silice auto-organisées, qui sont très prometteuses pour la fabrication de cristaux photoniques tridimensionnels.
Zhukovsky, Sergei V; Babicheva, Viktoriia E; Lavrinenko, Andrei V; Sipe, J E
2013-01-01
We theoretically study the propagation of large-wavevector waves (volume plasmon polaritons) in multilayer hyperbolic metamaterials with two levels of structuring. We show that when the parameters of a subwavelength metal-dielectric multilayer ("substructure") are modulated ("superstructured") on a larger, wavelength scale, the propagation of volume plasmon polaritons in the resulting multiscale hyperbolic metamaterials is subject to photonic band gap phenomena. A great degree of control over such plasmons can be exerted by varying the superstructure geometry. When this geometry is periodic, stop bands due to Bragg reflection are shown to form within the volume plasmonic band. When a cavity layer is introduced in an otherwise periodic superstructure, resonance peaks of the Fabry-P\\'erot nature are shown to be present within the stop bands. More complicated superstructure geometries are also considered. For example, fractal Cantor-like multiscale metamaterials are found to exhibit characteristic self-similar s...
Liang, Yunye; Wang, Vei; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki
2012-11-14
The electronic properties of silicene zigzag nanoribbons with the presence of perpendicular fields are studied by using first-principles calculations and the generalized nearest neighboring approximation method. In contrast to the planar graphene, in silicene the Si atoms are not coplanar. As a result, by applying perpendicular fields to the two-dimensional silicene sheet, the on-site energy can be modulated and the band gap at the Dirac point is open. The buckled structure also creates a height difference between the two edges of the silicene zigzag nanoribbons. We find that the external fields can modulate the energies of spin-polarized edge states and their corresponding band gaps. Due to the polarization in the plane, the modulation effect is width dependent and becomes much more significant for narrow ribbons.
Negative capacitance switching via VO2 band gap engineering driven by electric field
He, Xinfeng; Xu, Jing; Xu, Xiaofeng; Gu, Congcong; Chen, Fei; Wu, Binhe; Wang, Chunrui; Xing, Huaizhong; Chen, Xiaoshuang; Chu, Junhao
2015-03-01
We report the negative capacitance behavior of an energy band gap modulation quantum well with a sandwich VO2 layer structure. The phase transition is probed by measuring its capacitance. With the help of theoretical calculations, it shows that the negative capacitance changes of the quantum well device come from VO2 band gap by continuously tuning the temperature or voltage. Experiments reveal that as the current remains small enough, joule heating can be ignored, and the insulator-metal transition of VO2 can be induced by the electric field. Our results open up possibilities for functional devices with phase transitions induced by external electric fields other than the heating or electricity-heat transition.
Band gap engineered nano perforated graphene microstructures for field effect transistor
Palla, Penchalaiah; Tiwari, Durgesh Laxman; Ansari, Hasan Raza; Babu, Taraprasanna Saha; Ethiraj, Anita Sagadevan; Raina, J. P.
2016-05-01
To make use of exceptional properties of graphene in Field effect Transistor (FETs) for switching devices a band gap must be introduced in order to switch -off the device. Through periodic nano perforations a semi-metallic graphene is converted into semiconducting graphene. To understand the device physics behind the reported experiments theoretical simulations has been carried out. The present paper illustrates nano perforated semiconducting graphene Field effect Transistor (FETs) with micron scale dimensions. The simulation has been performed using drift-diffusion semi-classical and tight-binding based non-equilibrium green's function (NEGF) methods. The obtained simulation results are compared with previously reported experimental work. The device dimensions considered for simulations and the experiment are similar with neck width, hole periodicity and channel length of 6.3 nm, 16.3 nm and 1 µm respectively. The interesting and new finding in this work is the p-type I-V characteristics for small band gap devices and n-type behavior for large band gap devices.
Band gap tuning of epitaxial SrTiO{sub 3-δ}/Si(001) thin films through strain engineering
Energy Technology Data Exchange (ETDEWEB)
Cottier, Ryan J.; Steinle, Nathan A.; Currie, Daniel A.; Theodoropoulou, Nikoleta, E-mail: ntheo@txstate.edu [Physics Department, Texas State University, San Marcos, Texas 78666 (United States)
2015-11-30
We investigate the effect of strain and oxygen vacancies (V{sub O}) on the crystal and optical properties of oxygen deficient, ultra-thin (4–30 nm) films of SrTiO{sub 3-δ} (STO) grown heteroepitaxially on p-Si(001) substrates by molecular beam epitaxy. We demonstrate that STO band gap tuning can be achieved through strain engineering and show that the energy shift of the direct energy gap transition of SrTiO{sub 3-δ}/Si films has a quantifiable dimensional and doping dependence that correlates well with the changes in crystal structure.
Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates
Leubner, Philipp; Lunczer, Lukas; Brüne, Christoph; Buhmann, Hartmut; Molenkamp, Laurens W.
2016-08-01
The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low temperatures. Here, we utilize the strain dependence of the band structure of HgTe QWs to address this limitation. We use CdTe-Cd 0.5Zn0.5Te strained-layer superlattices on GaAs as virtual substrates with adjustable lattice constant to control the strain of the QW. We present magnetotransport measurements, which demonstrate a transition from a semimetallic to a 2D-TI regime in wide QWs, when the strain is changed from tensile to compressive. Most notably, we demonstrate a much enhanced energy gap of 55 meV in heavily compressively strained QWs. This value exceeds the highest possible gap on common II-VI substrates by a factor of 2-3, and extends the regime where the topological conductance prevails to much higher temperatures.
Jena, Ajit; Nanda, B. R. K.
2016-01-01
Density functional calculations are carried out to understand and tailor the electrochemical profile diffusivity, band gap and open circuit voltage of transition metal doped olivine phosphate LiFe_{1-x}M_{x}PO_{4} (M = V, Cr, Mn, Co and Ni). Diffusion and hence the ionic conductivity is studied by calculating the activation barrier, V_{act}, experienced by the diffusing Li^{+} ion. We show that the effect of dopants on diffusion is both site dependent and short ranged and thereby it paves way...
DEFF Research Database (Denmark)
Zhukovsky, Sergei; Orlov, Alexey A.; Babicheva, Viktoriia E.;
2014-01-01
We study theoretically the propagation of large-wave-vector waves (volume plasmon polaritons) in multilayer hyperbolic metamaterials with two levels of structuring. We show that when the parameters of a subwavelength metal-dielectric multilayer (substructure) are modulated (superstructured......) on a larger, wavelength scale, the propagation of volume plasmon polaritons in the resulting multiscale hyperbolic metamaterials is subject to photonic-band-gap phenomena. A great degree of control over such plasmons can be exerted by varying the superstructure geometry. When this geometry is periodic, stop......, fractal Cantor-like multiscale metamaterials are found to exhibit characteristic self-similar spectral signatures in the volume plasmonic band. Multiscale hyperbolic metamaterials are shown to be a promising platform for large-wave-vector bulk plasmonic waves, whether they are considered for use as a kind...
Band gap engineering of ZnO by doping with Mg
Rana, N.; Chand, Subhash; Gathania, Arvind K.
2015-08-01
Mg-doped zinc oxide (MgxZn1-xO (0 ≤ x ≤ 0.20)) samples were synthesized by polymeric precursor method. The structural and optical properties were investigated by x-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), UV-visible spectroscopy, Fourier transform infrared (FTIR) and Raman spectroscopy. XRD patterns reveal that synthesized samples have a wurtzite structure. Lattice parameters, the degree of distortion of the samples were calculated from the XRD. SEM images show that the synthesized samples contain the elongated spherical shaped grains. The Raman scattering investigation and FTIR spectra authenticate the presence of Mg in the system and also show phase segregation at the higher Mg doping concentration. Optical band gap energy is determined from the Tauc relation. It is interesting to know that optical band energy exhibits blue shift with the increase of Mg doping concentration up to 16 mole %.
Li, Haofeng; Wang, Xiaoxin; Liu, Jifeng
2016-03-01
We demonstrate highly effective strain-induced band-engineering of (111) oriented direct-gap Ge1-xSnx thin films (0.074 GeSn films also demonstrate high thermal stability, offering both excellent direct-gap optoelectronic properties and fabrication/operation robustness for integrated photonics.
Band-gap engineering of the h-BN/MoS2/h-BN sandwich heterostructure under an external electric field
Huang, Zongyu; Qi, Xiang; Yang, Hong; He, Chaoyu; Wei, Xiaolin; Peng, Xiangyang; Zhong, Jianxin
2015-05-01
Based on first-principles calculations in the framework of van der Waals density functional theory, we investigate the structural, electronic properties and band-gap tuning of the h-BN/MoS2/h-BN sandwich heterostructure under an external electric field. We find that, different from the suspended monolayer MoS2 with a direct band-gap, h-BN/MoS2/h-BN has an indirect band-gap. Particular attention has been focused on the engineering of the band-gap of the h-BN/MoS2/h-BN heterostructure via application of an external electric field. With the increase of electric field, the band-gap of the h-BN/MoS2/h-BN heterostructure undergoes an indirect-to-direct band-gap transition. Once the electric field intensity is larger than 0.1 V Å-1, the gap value of direct band-gap shrinks almost linearly with the field-strength, which indicates that the h-BN/MoS2/h-BN heterostructure is a viable candidate for optoelectronic applications.
Microstrip microwave band gap structures
Indian Academy of Sciences (India)
V Subramanian
2008-04-01
Microwave band gap structures exhibit certain stop band characteristics based on the periodicity, impedance contrast and effective refractive index contrast. These structures though formed in one-, two- and three-dimensional periodicity, are huge in size. In this paper, microstrip-based microwave band gap structures are formed by removing the substrate material in a periodic manner. This paper also demonstrates that these structures can serve as a non-destructive characterization tool for materials, a duplexor and frequency selective coupler. The paper presents both experimental results and theoretical simulation based on a commercially available finite element methodology for comparison.
Nguyen, Chuong V.; Hieu, Nguyen N.; Ilyasov, Victor V.
2016-08-01
In this work, we investigate band-gap tuning in bilayer MoS2 by an external electric field and by applied biaxial strain. Our calculations show that the band gaps of bilayer MoS2 can be tuned by the perpendicular electric field or biaxial strain. The band gaps of bilayer MoS2 decrease with increasing applied electric field or biaxial strain. When the electric field was introduced, electronic levels are split due to the separation of the valence sub-band and the conduction sub-band states. Our calculations also show that the change in the band gap of bilayer MoS2 is due to the separation of electronic levels by electric field via the Stark effect. At the electric field E_{Field} = 5.5 V/nm or biaxial strain ɛ = 15%, bilayer MoS2 becomes metallic. The semiconductor-metal phase transition in bilayer MoS2 plays an important role in its application for nanodevices.
Energy Technology Data Exchange (ETDEWEB)
Arshad, Mohd; Meenhaz Ansari, Mohd [Department of Applied Physics, Aligarh Muslim University, Aligarh (India); Ahmed, Arham S. [Department of Physics, Aligarh Muslim University, Aligarh (India); Tripathi, Pushpendra [Department of Applied Physics, Aligarh Muslim University, Aligarh (India); Ashraf, S.S.Z. [Department of Physics, Aligarh Muslim University, Aligarh (India); Naqvi, A.H. [Department of Applied Physics, Aligarh Muslim University, Aligarh (India); Azam, Ameer, E-mail: azam222@rediffmail.com [Department of Applied Physics, Aligarh Muslim University, Aligarh (India)
2015-05-15
In the present investigations Mg doped ZnO nanoparticles were synthesized using sol–gel method. Mg doping in nanoparticles was found to be a good method for tuning of band gap and photoluminescence of ZnO nanoparticles. Simultaneously, Mg doping also inhibited the growth of particle size and it decreased from 36.1 to 13.5 nm with the increase in doping concentration from 0% to 12%. Optical band gap was found to increase from 3.23 to 3.47 eV and photoluminescence studies revealed that visible PL emission was enhanced with doping concentration. - Highlights: • Significant decrease in particle size with Mg doping. • Increase in band gap with Mg doping. • Enhanced luminescence as a result of Mg doping.
DEFF Research Database (Denmark)
1999-01-01
An optical fibre having a periodicidal cladding structure provididing a photonic band gap structure with superior qualities. The periodical structure being one wherein high index areas are defined and wherein these are separated using a number of methods. One such method is the introduction...
Surface band-gap narrowing in quantized electron accumulation layers.
King, P D C; Veal, T D; McConville, C F; Zúñiga-Pérez, J; Muñoz-Sanjosé, V; Hopkinson, M; Rienks, E D L; Jensen, M Fuglsang; Hofmann, Ph
2010-06-25
An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.
Modak, Brindaban; Srinivasu, K; Ghosh, Swapan K
2014-08-28
In this theoretical study, we employ a codoping strategy to reduce the band gap of NaTaO3 aimed at improving the photocatalytic activity under visible light. The systematic study includes the effects of metal (W) and nonmetal (N) codoping on the electronic structure of NaTaO3 in comparison to the effect of individual dopants. The feasibility of the introduction of N into the NaTaO3 crystal structure is found to be enhanced in the presence of W, as indicated by the calculated formation energy. This codoping leads to formation of a charge compensated system, beneficial for the minimization of vacancy related defect formation. The electronic structure calculations have been carried out using a hybrid density functional for an accurate description of the proposed system. The introduction of W in place of Ta leads to the appearance of donor states below the conduction band, while N doping in place of oxygen introduces isolated acceptor states above the valence band. The codoping of N and W also passivates undesirable discrete midgap states. This feature is not observed in the case of (Cr, N) codoped NaTaO3 in spite of its charge compensated nature. We have also studied charge non-compensated codoping using several dopant pairs, including anion-anion and cation-anion pairs. However, this non-compensated codoping introduces localized states in between the valence band and the conduction band, and hence may not be effective in enhancing the photocatalytic properties of NaTaO3. The optical spectrum shows that the absorption curve for the (W, N)-codoped NaTaO3 is extended to the visible region due to narrowing of the band gap to 2.67 eV. Moreover, its activity for the photo decomposition of water to produce both H2 and O2 remains intact. Hence, based on the present investigation we can propose (W, N) codoped NaTaO3 as a promising photocatalyst for visible light driven water splitting.
Rippert, Edward D.; Ketterson, John B.; Chen, Jun; Song, Shenian; Lomatch, Susanne; Maglic, Stevan R.; Thomas, Christopher; Cheida, M. A.; Ulmer, Melville P.
1992-01-01
An engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasi-particles. Attention is given to a 1D Kronig-Penny model for phonons normally incident to the layers of a multilayered superconducting tunnel junction as an idealized example. A device with a high density of Bragg resonances is identified as desirable; both Nb/Si and NbN/SiN superlattices have been produced, with the latter having generally superior performance.
Saha, Sanjit; Jana, Milan; Khanra, Partha; Samanta, Pranab; Koo, Hyeyoung; Murmu, Naresh Chandra; Kuila, Tapas
2015-07-08
Nanostructured hexagonal boron nitride (h-BN)/reduced graphene oxide (RGO) composite is prepared by insertion of h-BN into the graphene oxide through hydrothermal reaction. Formation of the super lattice is confirmed by the existence of two separate UV-visible absorption edges corresponding to two different band gaps. The composite materials show enhanced electrical conductivity as compared to the bulk h-BN. A high specific capacitance of ∼824 F g(-1) is achieved at a current density of 4 A g(-1) for the composite in three-electrode electrochemical measurement. The potential window of the composite electrode lies in the range from -0.1 to 0.5 V in 6 M aqueous KOH electrolyte. The operating voltage is increased to 1.4 V in asymmetric supercapacitor (ASC) device where the thermally reduced graphene oxide is used as the negative electrode and the h-BN/RGO composite as the positive electrode. The ASC exhibits a specific capacitance of 145.7 F g(-1) at a current density of 6 A g(-1) and high energy density of 39.6 W h kg(-1) corresponding to a large power density of ∼4200 W kg(-1). Therefore, a facile hydrothermal route is demonstrated for the first time to utilize h-BN-based composite materials as energy storage electrode materials for supercapacitor applications.
Low band gap polymers for organic photovoltaics
DEFF Research Database (Denmark)
Bundgaard, Eva; Krebs, Frederik C
2007-01-01
Low band gap polymer materials and their application in organic photovoltaics (OPV) are reviewed. We detail the synthetic approaches to low band gap polymer materials starting from the early methodologies employing quinoid homopolymer structures to the current state of the art that relies...
One-Dimensional Anisotropic Band Gap Structure
Institute of Scientific and Technical Information of China (English)
无
2000-01-01
The band gap structure of one-dimensional anisotropic photonic crystal has been studied by means of the transfer matrix formalism. From the analytic expressions and numeric calculations we see some general characteristics of the band gap structure of anisotropic photonic crystals, each band separates into two branches and the two branches react to polarization sensitively. In the practical case of oblique incidence, gaps move towards high frequency when the angle of incidence increases. Under some special conditions, the two branches become degenerate again.
Mughal, Asad Jahangir
2014-01-01
Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material\\'s luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon. This journal is
Mughal, A; El Demellawi, J K; Chaieb, Sahraoui
2014-12-14
Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.
Multi Band Gap High Efficiency Converter (RAINBOW)
Bekey, I.; Lewis, C.; Phillips, W.; Shields, V.; Stella, P.
1997-01-01
The RAINBOW multi band gap system represents a unique combination of solar cells, concentrators and beam splitters. RAINBOW is a flexible system which can readily expand as new high efficiency components are developed.
Modification in band gap of zirconium complexes
Sharma, Mayank; Singh, J.; Chouhan, S.; Mishra, A.; Shrivastava, B. D.
2016-05-01
The optical properties of zirconium complexes with amino acid based Schiff bases are reported here. The zirconium complexes show interesting stereo chemical features, which are applicable in organometallic and organic synthesis as well as in catalysis. The band gaps of both Schiff bases and zirconium complexes were obtained by UV-Visible spectroscopy. It was found that the band gap of zirconium complexes has been modified after adding zirconium compound to the Schiff bases.
Guilhon, I.; Marques, M.; Teles, L. K.; Bechstedt, F.
2017-01-01
The (BN) 1 -x(C2)x alloys are promising materials for band-gap engineering in two-dimensional electronics. In this work, we provide a complete scenario of statistical possibilities for the distribution of atoms and its influence on electronic and optical properties. Using first-principles calculations combined with the generalized quasichemical approximation to account for disorder effects, we study the properties of these two-dimensional alloys as a function of their average composition. Our results show that atomic arrangements with C-C and B-N bonds are energetically favored over the ones with B-B and N-N bonds, explaining the known tendency to phase separation, verified by a T -x phase diagram. We calculate the energy gap as a function of the composition considering both composition fluctuation and phase separation effects. Experimental data are discussed in this context. Finally, we obtain absorption spectra reproducing a two-peak pattern for intermediate carbon concentrations found experimentally and identified with phase-segregated instead of homogeneous alloys.
Long, Run; English, Niall J
2011-08-14
In this study, we have used cation-passivated codoping of Nb with Ga/In and also of W with Zn/Cd to modulate the band structure of anatase-TiO(2) to extend absorption to longer visible-light wavelengths. We adopted generalized Kohn-Sham theory with the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional for exchange and correlation. It has been found that (W, Cd)-doped TiO(2) should be a strong candidate for visible-light photocatalyst materials owing to the largest extent of band gap narrowing and the formation of continuum band, without movement of the valence band. It is argued that this design principle for band-edge modification can also be applied to other wide-band-gap semiconductors.
Sizable band gap in organometallic topological insulator
Derakhshan, V.; Ketabi, S. A.
2017-01-01
Based on first principle calculation when Ceperley-Alder and Perdew-Burke-Ernzerh type exchange-correlation energy functional were adopted to LSDA and GGA calculation, electronic properties of organometallic honeycomb lattice as a two-dimensional topological insulator was calculated. In the presence of spin-orbit interaction bulk band gap of organometallic lattice with heavy metals such as Au, Hg, Pt and Tl atoms were investigated. Our results show that the organometallic topological insulator which is made of Mercury atom shows the wide bulk band gap of about ∼120 meV. Moreover, by fitting the conduction and valence bands to the band-structure which are produced by Density Functional Theory, spin-orbit interaction parameters were extracted. Based on calculated parameters, gapless edge states within bulk insulating gap are indeed found for finite width strip of two-dimensional organometallic topological insulators.
Mondal, Rajib
2011-01-01
A strategic side-chain engineering approach leads to the two orders of magnitude enhancement of charge carrier mobility in phenanthrene based fused aromatic thienopyrazine polymers. Hole carrier mobility up to 0.012 cm 2/Vs can be obtained in thin film transistor devices. Polymers were also utilized to fabricate bulk heterojunction photovoltaic devices and the maximum PCE obtained in these OPV\\'s was 1.15%. Most importantly, performances of the devices were correlated with thin morphological analysis performed by atomic force microscopy and grazing incidence X-ray scattering. © 2011 The Royal Society of Chemistry.
Maximizing band gaps in plate structures
DEFF Research Database (Denmark)
Halkjær, Søren; Sigmund, Ole; Jensen, Jakob Søndergaard
2006-01-01
Band gaps, i.e., frequency ranges in which waves cannot propagate, can be found in elastic structures for which there is a certain periodic modulation of the material properties or structure. In this paper, we maximize the band gap size for bending waves in a Mindlin plate. We analyze an infinite...... periodic plate using Bloch theory, which conveniently reduces the maximization problem to that of a single base cell. Secondly, we construct a finite periodic plate using a number of the optimized base cells in a postprocessed version. The dynamic properties of the finite plate are investigated...
Choi, Young In; Jung, Hye Jin; Shin, Weon Gyu; Sohn, Youngku
2015-11-01
The hybridization of ZnO with Ag has been performed extensively to increase the efficiency of ZnO in various applications, including catalysis. In this study, a wet (w) and dry (d) ball-milling method was used to hybridize Ag with ZnO nanoparticles, and their physicochemical properties were examined. Visible light absorption was enhanced and the band gap was engineered by ball-milling and Ag hybridization. Their photocatalytic activities were tested with rhodamine B (RhB) and a mixed dye (methyl orange + RhB + methylene blue) under visible light irradiation. For pure RhB, the photocatalytic activity was decreased by ball-milling and was observed in the order of ZnO(d) degradation of RhB and methylene blue (MB) in the mixed dye (or the simulated real contaminated water), the photocatalytic activity was observed in the order of Ag/ZnO(d) degradation of RhB and methylene blue (MB). In the mixed dye over all the catalysts, methyl orange (MO) was degraded most rapidly. The relative degradation rates of RhB and MB were found to be dependent on the catalyst and reaction conditions.
Band Gap Narrowing in Heavily Doped Silicon.
Gupta, Tapan Kumar
Two analytic models for transport and band gap narrowing in heavily doped (N_{rm D} > 10^{20} cm^ {-3}) silicon have been set up and verified through measurements on n^{+} -p junction devices. The first model is based on calculation of the ratio of the charge present in the emitter of the n^{+} region of the junction to that of the charge present in the absence of band gap shrinkage. Fermi-Dirac statistics are employed and are found to have a significant effect at this doping level. The second model is based on current transport of minority carriers in the n^{+} region. In this model only two parameters need to be known, the diffusion coefficient and the diffusion length for minority carriers, to calculate the band gap narrowing. An empirical relation between band gap narrowing and donor concentration has also been established based on experimental values of diffusion coefficient and mobility. These models have been verified by several different experimental techniques including surface photovoltage, open circuit voltage decay, photoconductivity decay and modulation reflection spectroscopy. The results indicate that, in the impurity range above about 10^{20} cm^{-3}, Fermi-Dirac statistics must be invoked in order to achieve a satisfactory fit with experimental data.
Plasmonic band gap cavities on biharmonic gratings
Kocabas, Askin; Seckin Senlik, S.; Aydinli, Atilla
2008-05-01
In this paper, we have experimentally demonstrated the formation of plasmonic band gap cavities in infrared and visible wavelength range. The cavity structure is based on a biharmonic metallic grating with selective high dielectric loading. A uniform metallic grating structure enables strong surface plasmon polariton (SPP) excitation and a superimposed second harmonic component forms a band gap for the propagating SPPs. We show that a high dielectric superstructure can dramatically perturb the optical properties of SPPs and enables the control of the plasmonic band gap structure. Selective patterning of the high index superstructure results in an index contrast in and outside the patterned region that forms a cavity. This allows us to excite the SPPs that localize inside the cavity at specific wavelengths, satisfying the cavity resonance condition. Experimentally, we observe the formation of a localized state in the band gap and measure the dispersion diagram. Quality factors as high as 37 have been observed in the infrared wavelength. The simplicity of the fabrication and the method of testing make this approach attractive for applications requiring localization of propagating SPPs.
Photonic band gap in thin wire metamaterials.
Hock, Kai Meng
2008-03-01
We investigate the band structure of a class of photonic crystals made from only thin wires. Using a different method, we demonstrate that a complete photonic band gap is possible for such materials. Band gap materials normally consist of space filling dielectric or metal, whereas thin wires occupy a very small fraction of the volume. We show that this is related to the large increase in scattering at the Brillouin zone boundary. The method we developed brings together the calculation techniques in three different fields. The first is the calculation of scattering from periodic, tilted antennas, which we improve upon. The second is the standard technique for frequency selective surface design. The third is obtained directly from low energy electron diffraction theory. Good agreements with experiments for left handed materials, negative materials, and frequency selective surfaces are demonstrated.
Kumar, S.; Joshi, Suman; Gupta, S. K.; Auluck, S.
2016-05-01
The mixed cation alloys CuAl1-x In x S2 span a band gap range that fits the requirement for solar cell light absorbers. However, the materials properties of CuAl1-x In x S2 are not well known as a function of concentration (x). We have used density functional theory calculations to study the structural and electronic properties of these alloys. The most stable configuration out of all possible configurations in the given supercell was obtained with the site occupancy disorder (SOD) program. We find that (i) the structural properties are reproduced to within less than 1% of the measured values; (ii) the CuAl1-x In x S2 alloys are highly miscible with low formation enthalpies; (iii) the band gap of CuAl1-x In x S2 decreases from 3.3 eV to 1.5 eV as In concentration (x) increases from 0 to 1, and shows a small bowing when calculated with hybrid Heyd-Scuseria-Ernzerhof (HSE06) functionals; (iv) the calculated band offset shows that the band gap decreases with the addition of In, resulting mainly from the valence band upshift.
Diluted magnetic semiconductors with narrow band gaps
Gu, Bo; Maekawa, Sadamichi
2016-10-01
We propose a method to realize diluted magnetic semiconductors (DMSs) with p - and n -type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2 , which has a band gap of 0.2 eV. In addition, we found a nontoxic DMS Mn-doped BaZn2Sb2 , of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2 , the Tc of which was up to 230 K in a recent experiment.
Directory of Open Access Journals (Sweden)
A Rahmatnezamabad
2014-11-01
Full Text Available In this paper photonic band gaps of 1D photonic crystal are compared by using transfer matrix method and Fresnel coefficients method. In Fresnel coefficients method, the refractive indices of each layer and incidence light angle to the surface are used for calculating Fresnel coefficients, and then the necessary and sufficient condition for a 100% reflection from the surface of double layer dielectrics is applied in such a way that reflection coefficient tends to unity so that photonic band gaps are determined. But in transfer matrix method there are some complications needed for solving quadratic partial differential equations and applying continuity of tangent components of fields and Bloch’s condition, though the results are the same
Band gap engineering of ZnSnN2/ZnO (001) short-period superlattices via built-in electric field
Fang, D. Q.; Zhang, Y.; Zhang, S. L.
2016-12-01
Using density-functional-theory calculations combined with hybrid functional, we investigate the band gaps and built-in electric fields of ZnSnN2/ZnO (001) short-period superlattices. The band gap of ZnSnN2/ZnO (001) superlattice can be tuned from 1.9 eV to 0 eV by varying the thickness of both the ZnSnN2 and ZnO regions. Compared to the III-nitride superlattices, stronger built-in electric fields, induced by the polarizations, form inside the ZnSnN2/ZnO superlattices. The lowest electron and uppermost hole states are mainly localized at the two opposite interfaces of the superlattice, but the tails of the lowest electron states extend over several atomic layers. Based on the electrostatic argument, we demonstrate that variations of the band gap are approximately described by a geometric factor. The influence of the in-plane strain is also discussed. The results will be valuable in the design of ZnSnN2/ZnO heterostructures for electronics and optoelectronics applications.
Substrate-induced band gap opening in epitaxial graphene
Energy Technology Data Exchange (ETDEWEB)
Zhou, S.Y.; Gweon, G.-H.; Fedorov, A.V.; First, P.N.; de Heer,W.A.; Lee, D.-H.; Guinea, F.; Castro Neto, A.H.; Lanzara, A.
2007-09-08
Graphene has shown great application potential as the hostmaterial for next-generation electronic devices. However, despite itsintriguing properties, one of the biggest hurdles for graphene to beuseful as an electronic material is the lack of an energy gap in itselectronic spectra. This, for example, prevents the use of graphene inmaking transistors. Although several proposals have been made to open agap in graphene's electronic spectra, they all require complexengineering of the graphene layer. Here, we show that when graphene isepitaxially grown on SiC substrate, a gap of ~;0.26 eV is produced. Thisgap decreases as the sample thickness increases and eventually approacheszero when the number of layers exceeds four. We propose that the originof this gap is the breaking of sublattice symmetry owing to thegraphene-substrate interaction. We believe that our results highlight apromising direction for band gap engineering of graphene.
Besse, Rafael; Sabino, Fernando P.; Da Silva, Juarez L. F.
2016-04-01
Quaternary chalcogenide materials offer a wide variety of chemical and physical properties, and hence, those compounds have been widely studied for several technological applications. Recently, experimental studies have found that the chalcogenide Cs2MIIM3IVQ8 family (MII = Mg , Zn , Cd , Hg , MIV = Ge , Sn and Q = S , Se , Te ), which includes 24 compounds, yields a wide range of band gaps, namely, from 1.07 to 3.4 eV, and hence, they have attracted great interest. To obtain an improved atomistic understanding of the role of the cations and anions on the physical properties, we performed a first-principles investigation of the 24 Cs2MIIM3IVQ8 compounds employing density functional theory within semilocal and hybrid exchange-correlation energy functionals and the addition of van der Waals corrections to improve the description of the weakly interacting layers. Our lattice parameters are in good agreement with the available experimental data (i.e., 11 compounds), and the equilibrium volume increases linearly by increasing the atomic number of the chalcogen, which can be explained by the increased atomic radius of the chalcogen atoms from S to Te . We found that van der Waals corrections play a crucial role in the lattice parameter in the stacking direction of the Cs2MIIM3IVQ8 layers, while the binding energy per unit area has similar magnitude as obtained for different layered materials. We obtained that the band gaps follow a linear relation as a function of the unit cell volume, which can be explained by the atomic size of the chalcogen atom and the relative position of the Q p states within the band structure. The fundamental and optical band gaps differ by less than 0.1 eV. The band gaps obtained with the hybrid functional are in good agreement with the available experimental data. Furthermore, we found from the Bader analysis, that the Coulomb interations among the cations and anions play a crucial role on the energetic properties.
The band-gap enhanced photovoltaic structure
Tessler, Nir
2016-05-01
We critically examine the recently suggested structure that was postulated to potentially add 50% to the photo-conversion efficiency of organic solar cells. We find that the structure could be realized using stepwise increase in the gap as long as the steps are not above 0.1 eV. We also show that the charge extraction is not compromised due to an interplay between the contact's space charge and the energy level modification, which result in a flat energy band at the extracting contact.
Band structure engineering in organic semiconductors
Schwarze, Martin; Tress, Wolfgang; Beyer, Beatrice; Gao, Feng; Scholz, Reinhard; Poelking, Carl; Ortstein, Katrin; Günther, Alrun A.; Kasemann, Daniel; Andrienko, Denis; Leo, Karl
2016-06-01
A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors.
Formation of Degenerate Band Gaps in Layered Systems
Directory of Open Access Journals (Sweden)
Alexey P. Vinogradov
2012-06-01
Full Text Available In the review, peculiarities of spectra of one-dimensional photonic crystals made of anisotropic and/or magnetooptic materials are considered. The attention is focused on band gaps of a special type—the so called degenerate band gaps which are degenerate with respect to polarization. Mechanisms of formation and properties of these band gaps are analyzed. Peculiarities of spectra of photonic crystals that arise due to the linkage between band gaps are discussed. Particularly, it is shown that formation of a frozen mode is caused by linkage between Brillouin and degenerate band gaps. Also, existence of the optical Borrmann effect at the boundaries of degenerate band gaps and optical Tamm states at the frequencies of degenerate band gaps are analyzed.
Origin of multiple band gap values in single width nanoribbons
Goyal, Deepika; Kumar, Shailesh; Shukla, Alok; Kumar, Rakesh
2016-11-01
Deterministic band gap in quasi-one-dimensional nanoribbons is prerequisite for their integrated functionalities in high performance molecular-electronics based devices. However, multiple band gaps commonly observed in graphene nanoribbons of the same width, fabricated in same slot of experiments, remain unresolved, and raise a critical concern over scalable production of pristine and/or hetero-structure nanoribbons with deterministic properties and functionalities for plethora of applications. Here, we show that a modification in the depth of potential wells in the periodic direction of a supercell on relative shifting of passivating atoms at the edges is the origin of multiple band gap values in nanoribbons of the same width in a crystallographic orientation, although they carry practically the same ground state energy. The results are similar when calculations are extended from planar graphene to buckled silicene nanoribbons. Thus, the findings facilitate tuning of the electronic properties of quasi-one-dimensional materials such as bio-molecular chains, organic and inorganic nanoribbons by performing edge engineering.
Samanta, Saurabh; Saini, Sapan Mohan
2017-03-01
The electronic and optical properties of the ACr2S4 (A=Fe, Co) normal spinels have been studied by use of the full-potential linearized augmented plane wave (FPLAPW) method based on density functional theory (DFT). The calculations were performed by two methods, namely, PBE+U and TB-mBJ, with the addition of spin-orbit coupling in both the schemes. The lattice constant and internal parameter of unit cell were optimized. Band structure obtained are analysed based on Density of States (DOS). We found that more pronounced splitting of A-d and Cr-d states in TB-mBJ scheme is responsible for the larger band gaps. The octahedral field surrounding Cr-atoms splits the Cr-d levels into t2g and eg states with some mixing between the two states. The calculated values of spin magnetic moment per formula unit are consistent with earlier report. Optical properties are calculated along the directions of lattice constants to analyze their anisotropic nature based on energy level transitions. We also studied the refractive index, n (ω), and the extinction coefficient, k (ω), by PBE+U and TB-mBJ scheme.
Review of wide band-gap semiconductors technology
Directory of Open Access Journals (Sweden)
Jin Haiwei
2016-01-01
Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.
Bi-directional evolutionary optimization for photonic band gap structures
Energy Technology Data Exchange (ETDEWEB)
Meng, Fei [Centre for Innovative Structures and Materials, School of Civil, Environmental and Chemical Engineering, RMIT University, GPO Box 2476, Melbourne, VIC 3001 (Australia); School of Civil Engineering, Central South University, Changsha 410075 (China); Huang, Xiaodong, E-mail: huang.xiaodong@rmit.edu.au [Centre for Innovative Structures and Materials, School of Civil, Environmental and Chemical Engineering, RMIT University, GPO Box 2476, Melbourne, VIC 3001 (Australia); Key Laboratory of Advanced Technology for Vehicle Body Design & Manufacture, Hunan University, Changsha, 410082 (China); Jia, Baohua [Centre for Micro-Photonics, Faculty of Engineering & Industrial Science, Swinburne University of Technology, PO Box 218, Hawthorn, VIC 3122 (Australia)
2015-12-01
Toward an efficient and easy-implement optimization for photonic band gap structures, this paper extends the bi-directional evolutionary structural optimization (BESO) method for maximizing photonic band gaps. Photonic crystals are assumed to be periodically composed of two dielectric materials with the different permittivity. Based on the finite element analysis and sensitivity analysis, BESO starts from a simple initial design without any band gap and gradually re-distributes dielectric materials within the unit cell so that the resulting photonic crystal possesses a maximum band gap between two specified adjacent bands. Numerical examples demonstrated the proposed optimization algorithm can successfully obtain the band gaps from the first to the tenth band for both transverse magnetic and electric polarizations. Some optimized photonic crystals exhibit novel patterns markedly different from traditional designs of photonic crystals.
Analysis on Band Gaps of MCM-41 Type of Materials
Institute of Scientific and Technical Information of China (English)
HAN Pei-de; LIANG Jian; XU Bing-she; LIU Xu-guang; PENG Lian-mao
2004-01-01
The concept and analysis method of photonic crystals and band gaps are introduced into one-dimensional(1D) ordered mesoporous materials. MCM-41 type of materials are treated theoretically as photonic crystals. The formation of band gaps is exhibited and confirmed by a calculation of transfer matrix technique. PBG was found around 9-42 nm in soft X-ray region. The photonic band-gap was predicted to be dependent on incident direction, pore size and lattice constant. The mesoporous materials with different pore sizes and different lattice constants have different band-gap widths.
Energy Technology Data Exchange (ETDEWEB)
Lee, Jae-chul [Physics Department of Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715 (Korea, Republic of); Quantum Functional Semiconductor Research Center, Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715 (Korea, Republic of); Lee, Ji-eun [Physics Department of Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715 (Korea, Republic of); Lee, Ju-won; Lee, Jae-choon [Quantum Functional Semiconductor Research Center, Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715 (Korea, Republic of); Subramaniam, N.G., E-mail: ganapathi@dongguk.edu [Quantum Functional Semiconductor Research Center, Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715 (Korea, Republic of); Nano Information Technology Academy, Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715 (Korea, Republic of); Kang, Tae-won, E-mail: twkang@dongguk.edu [Physics Department of Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715 (Korea, Republic of); Quantum Functional Semiconductor Research Center, Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715 (Korea, Republic of); Nano Information Technology Academy, Dongguk University, 26 Phil dong 3 ga Chung-gu, Seoul 100-715 (Korea, Republic of); Ahuja, Rajeev [Department of Physics and Astronomy, Uppsala University, Box 516, 75120 Uppsala (Sweden)
2014-02-05
Highlights: • ZnO{sub 1-x}Se{sub x} thin films grown using Pulsed laser deposition technique. • Selenium is not commonly used to reduce bandgap in ZnO. • Publications in this direction using Se as dopant in ZnO was published by, Iwata et al. [8] and Mayer et al. [9]. • Single target was used to obtain single phase material. -- Abstract: ZnO{sub 1-x}Se{sub x} films with various selenium concentrations are deposited on the sapphire substrate (0 0 0 1) by pulsed laser deposition technique. Structural properties of the thin films studied by X-ray diffraction (XRD) and chemical bonding studied by X-ray photoelectron spectroscopy (XPS) reveals that Se is substituted in O site during the growth of ZnO{sub 1-x}Se{sub x} films. Optical properties are analyzed by UV–Visible spectrometer. From the plot for (αhυ){sup 2} vs photon energy, it is inferred that the band gap energy of ZnO{sub 1-x}Se{sub x} gradually reduces to 2.85 eV with increasing Se concentration.
Solid state dielectric screening versus band gap trends and implications
Ravichandran, Ram; Wang, Alan X.; Wager, John F.
2016-10-01
High-frequency (optical) and low-frequency (static) dielectric constant versus band gap trends, as well as index of refraction versus band gap trends are plotted for 107 inorganic semiconductors and insulators. These plots are describable via power-law fitting. Dielectric screening trends that emerge from this analysis have important optical and electronic implications. For example, barrier lowering during Schottky emission, phonon-assisted or Fowler-Nordheim tunneling, or Frenkel-Poole emission from a trap is found to be significantly more pronounced with increasing band gap due to a reduction in the optical dielectric constant with increasing band gap. The decrease in the interface state density with increasing band gap is another optical dielectric constant trend. The tendency for a material with a wider band gap to be more difficult to dope is attributed to an increase in the ionization energy of the donor or acceptor dopant, which in turn, depends on the optical dielectric constant and the effective mass. Since the effective mass for holes is almost always larger than that for electrons, p-type doping is more challenging than n-type doping in a wide band gap material. Finally, the polar optical phonon-limited mobility depends critically upon the reciprocal difference of the optical and the static dielectric constant. Consequently, electron and hole mobility tend to decrease with increasing band gap in a polar material.
Sub-band-gap laser micromachining of lithium niobate
DEFF Research Database (Denmark)
Christensen, F. K.; Müllenborn, Matthias
1995-01-01
method is reported which enables us to do laser processing of lithium niobate using sub-band-gap photons. Using high scan speeds, moderate power densities, and sub-band-gap photon energies results in volume removal rates in excess of 106µm3/s. This enables fast micromachining of small piezoelectric...
Designer disordered materials with large complete photonic band gaps
Florescu, Marian; Steinhardt, Paul J; 10.1073/pnas.0907744106
2010-01-01
We present designs of 2D isotropic, disordered photonic materials of arbitrary size with complete band gaps blocking all directions and polarizations. The designs with the largest gaps are obtained by a constrained optimization method that starts from a hyperuniform disordered point pattern, an array of points whose number variance within a spherical sampling window grows more slowly than the volume. We argue that hyperuniformity, combined with uniform local topology and short-range geometric order, can explain how complete photonic band gaps are possible without long-range translational order. We note the ramifications for electronic and phononic band gaps in disordered materials.
Strain modulated band gap of edge passivated armchair graphene nanoribbons
Peng, Xihong
2011-01-01
First principles calculations were performed to study strain effects on band gap of armchair graphene nanoribbons (AGNRs)with different edge passivation, including H, O, and OH group. The band gap of the H-passivated AGNRs shows a nearly periodic zigzag variation under strain. For O and OH passivation, the zigzag patterns are significantly shifted by a modified quantum confinement due to the edges. In addition, the band gap of the O-passivated AGNRs experiences a direct-to-indirect transition with sufficient tensile strain (~5%). The indirect gap reduces to zero with further increased strain.
Molecular doping and band-gap opening of bilayer graphene.
Samuels, AJ; Carey, JD
2013-01-01
The ability to induce an energy band gap in bilayer graphene is an important development in graphene science and opens up potential applications in electronics and photonics. Here we report the emergence of permanent electronic and optical band gaps in bilayer graphene upon adsorption of π electron containing molecules. Adsorption of n- or p-type dopant molecules on one layer results in an asymmetric charge distribution between the top and bottom layers and in the formation of an energy gap. ...
Band Gaps of an Amorphous Photonic Materials
Institute of Scientific and Technical Information of China (English)
WANG Yi-Quan; FENG Zhi-Fang; HU Xiao-Yong; CHENG Bing-Ying; ZHANG Dao-Zhong
2004-01-01
@@ A new kind of amorphous photonic materials is presented. Both the simulated and experimental results show that although the disorder of the whole dielectric structure is strong, the amorphous photonic materials have two photonic gaps. This confirms that the short-range order is an essential factor for the formation of the photonic gaps.
Band gap scaling laws in group IV nanotubes
Wang, Chongze; Fu, Xiaonan; Guo, Yangyang; Guo, Zhengxiao; Xia, Congxin; Jia, Yu
2017-03-01
By using the first-principles calculations, the band gap properties of nanotubes formed by group IV elements have been investigated systemically. Our results reveal that for armchair nanotubes, the energy gaps at K points in the Brillouin zone decrease as 1/r scaling law with the radii (r) increasing, while they are scaled by ‑1/r 2 + C at Γ points, here, C is a constant. Further studies show that such scaling law of K points is independent of both the chiral vector and the type of elements. Therefore, the band gaps of nanotubes for a given radius can be determined by these scaling laws easily. Interestingly, we also predict the existence of indirect band gap for both germanium and tin nanotubes. Our new findings provide an efficient way to determine the band gaps of group IV element nanotubes by knowing the radii, as well as to facilitate the design of functional nanodevices.
Vargas, W. E.; Hernández-Jiménez, M.; Libby, E.; Azofeifa, D. E.; Solis, Á.; Barboza-Aguilar, C.
2015-09-01
Under normal illumination with non-polarized light, reflection spectra of the cuticle of golden-like and red Chrysina aurigans scarabs show a structured broad band of left-handed circularly polarized light. The polarization of the reflected light is attributed to a Bouligand-type left-handed chiral structure found through the scarab's cuticle. By considering these twisted structures as one-dimensional photonic crystals, a novel approach is developed from the dispersion relation of circularly polarized electromagnetic waves traveling through chiral media, to show how the broad band characterizing these spectra arises from an intrinsic narrow photonic band gap whose spectral position moves through visible and near-infrared wavelengths.
Optimum design of band-gap beam structures
DEFF Research Database (Denmark)
Olhoff, Niels; Niu, Bin; Cheng, Gengdong
2012-01-01
-sectional area. To study the band-gap for travelling waves, a repeated inner segment of the optimized beams is analyzed using Floquet theory and the waveguide finite element (WFE) method. Finally, the frequency response is computed for the optimized beams when these are subjected to an external time......The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded...
Band gap effects of hexagonal boron nitride using oxygen plasma
Energy Technology Data Exchange (ETDEWEB)
Sevak Singh, Ram; Leong Chow, Wai [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yingjie Tay, Roland [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Hon Tsang, Siu [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Mallick, Govind [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Weapons and Materials Research Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States); Tong Teo, Edwin Hang, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
2014-04-21
Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.
Estimation of the band gap of InPO4
Wager, J. F.; Wilmsen, C. W.; Kazmerski, L. L.
1983-04-01
The band gap of a thin layer of InPO4 was estimated to be 4.5 eV using a novel approach employing ultraviolet photoelectron spectroscopy and electron energy loss spectroscopy. The technique measures the conduction-band minimum and valence-band maximum referenced to the In 4d core line energy. Since this technique is highly surface sensitive, it can be used to measure the band gap of a thin layer. This parameter is difficult to measure in such layers using conventional techniques.
Band Gap Properties of Magnetoelectroelastic Grid Structures with Initial Stress
Institute of Scientific and Technical Information of China (English)
WANG Yi-Ze; LI Feng-Ming
2012-01-01
The propagation of elastic waves in magnetoelectroelastic grid structures is studied.Band gap properties are presented and the effects of the magnetoelectroelastic coupling and initial stress are considered. Numerical calculations are performed using the plane-wave expansion method.The results show that the band gap width can be tuned by the initial stress.It is hoped that our results will be helpful for designing acoustic filters with magnetoelectroelastic materials and grid structures.
Amorphous Photonic Lattices: Band Gaps, Effective Mass and Suppressed Transport
Rechtsman, Mikael; Szameit, Alexander; Dreisow, Felix; Heinrich, Matthias; Keil, Robert; Nolte, Stefan; Segev, Mordechai
2010-01-01
We present, theoretically and experimentally, amorphous photonic lattices exhibiting a band-gap yet completely lacking Bragg diffraction: 2D waveguides distributed randomly according to a liquid-like model responsible for the absence of Bragg peaks as opposed to ordered lattices containing disorder, which always exhibit Bragg peaks. In amorphous lattices the bands are comprised of localized states, but we find that defect states residing in the gap are more localized than the Anderson localiz...
Maximizing the Optical Band Gap in 2D Photonic Crystals
DEFF Research Database (Denmark)
Hougaard, Kristian G.; Sigmund, Ole
Topology optimization is used to find the 2D photonic crystal designs with the largest relative photonic band gaps. Starting points for the topology optimization are found with an exhaustive binary search on a low resolution grid.......Topology optimization is used to find the 2D photonic crystal designs with the largest relative photonic band gaps. Starting points for the topology optimization are found with an exhaustive binary search on a low resolution grid....
Band gap bowing in quaternary nitride semiconducting alloys
DEFF Research Database (Denmark)
Gorczyka, Isabela; Suski, T.; Christensen, Niels Egede;
2011-01-01
the composition and atomic arrangements are examined using a supercell geometry. An analytical expression for the band gap is derived for the entire range of compositions. The range of (x, y) values for which InxGayAl1−x−yN is lattice matched to GaN, and the ensuing energy gaps, are given. This range of available...
Energy bands and gaps near an impurity
Mihóková, E.; Schulman, L. S.
2016-10-01
It has been suggested that in the neighborhood of a certain kind of defect in a crystal there is a bend in the electronic band. We confirm that this is indeed possible using the Kronig-Penney model. Our calculations also have implications for photonic crystals.
Molecular doping and band-gap opening of bilayer graphene.
Samuels, Alexander J; Carey, J David
2013-03-26
The ability to induce an energy band gap in bilayer graphene is an important development in graphene science and opens up potential applications in electronics and photonics. Here we report the emergence of permanent electronic and optical band gaps in bilayer graphene upon adsorption of π electron containing molecules. Adsorption of n- or p-type dopant molecules on one layer results in an asymmetric charge distribution between the top and bottom layers and in the formation of an energy gap. The resultant band gap scales linearly with induced carrier density though a slight asymmetry is found between n-type dopants, where the band gap varies as 47 meV/10(13) cm(-2), and p-type dopants where it varies as 40 meV/10(13) cm(-2). Decamethylcobaltocene (DMC, n-type) and 3,6-difluoro-2,5,7,7,8,8-hexacyano-quinodimethane (F2-HCNQ, p-type) are found to be the best molecules at inducing the largest electronic band gaps up to 0.15 eV. Optical adsorption transitions in the 2.8-4 μm region of the spectrum can result between states that are not Pauli blocked. Comparison is made between the band gaps calculated from adsorbate-induced electric fields and from average displacement fields found in dual gate bilayer graphene devices. A key advantage of using molecular adsorption with π electron containing molecules is that the high binding energy can induce a permanent band gap and open up possible uses of bilayer graphene in mid-infrared photonic or electronic device applications.
Diluted II-VI oxide semiconductors with multiple band gaps.
Yu, K M; Walukiewicz, W; Wu, J; Shan, W; Beeman, J W; Scarpulla, M A; Dubon, O D; Becla, P
2003-12-12
We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two direct band gaps with interband transitions at approximately 1.77 and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model. With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.
Band gap opening in graphene: a short theoretical study
Sahu, Sivabrata; Rout, G. C.
2017-03-01
Graphene, being a gapless semiconductor, cannot be used in pristine form for nano-electronic applications. Therefore, it is essential to generate a finite gap in the energy dispersion at Dirac point. We present here the tight-binding model Hamiltonian taking into account of various interactions for tuning band gap in graphene. The model Hamiltonian describes the hopping of the π-electrons up to third nearest-neighbours, substrate effects, Coulomb interaction at two sub-lattices, electron-phonon interaction in graphene-on-substrates and high phonon frequency vibrations, besides the bi-layer graphene. We have solved the Hamiltonian using Zubarev's double time single particle Green's function technique. The quasi-particle energies, electron band dispersions, the expression for effective band gap and the density of states (DOS) are calculated numerically. The results are discussed by varying different model parameters of the system. It is observed that the electron DOS and band dispersion exhibit linear energy dependence near Dirac point for nearest-neighbour hopping integral. However, the second and third nearest-neighbour hoppings provide asymmetry in DOS. The band dispersions exhibit wider band gaps with stronger substrate effect. The modified gap in graphene-on-substrate attains its maximum value for Coulomb interaction energy U_{C} = 1.7 t1 . The critical Coulomb interaction is enhanced to U_{C} = 2.5 t1 to produce maximum band gap in the presence of electron-phonon interaction and phonon vibration. The bi-layer graphene exhibits Mexican hat type band gap near Dirac point for transverse gating potential. The other conclusions for the present work are described in the text.
Photonic band gap of 2D complex lattice photonic crystal
Institute of Scientific and Technical Information of China (English)
GUAN Chun-ying; YUAN Li-bo
2009-01-01
It is of great significance to present a photonic crystal lattice structure with a wide photonic bandgap. A two-dimension complex lattice photonic crystal is proposed. The photonic crystal is composed of complex lattices with triangular structure, and each single cell is surrounded by six scatterers in an hexagon. The photonic band gaps are calculated based on the plane wave expansion (PWE) method. The results indicate that the photonic crystal has tunable large TM polarization band gap, and a gap-midgap ratio of up to 45.6%.
Multiband Terahertz Photonic Band Gaps of Subwavelength Planar Fractals
Institute of Scientific and Technical Information of China (English)
ZHAO Guo-Zhong; TIAN Yan; SUN Hong-Qi; ZHANG Cun-Lin; YANG Guo-Zhen
2006-01-01
Optical transmission properties of subwavelength planar fractals in terahertz (THz) frequency regime are studied by means of time-domain spectroscopy. The transmission spectra with multiple pass bands and stop bands are observed. The tunable photonic band gaps are realized by changing the angle between the principle axis of planar fractal and the polarization of THz wave. The possible application of the subwavelength optical component is discussed. We attribute the detected transmittance from subwavelength fractals to localized resonances.
Band Gap Tuning of Armchair Graphene Nanoribbons by Using Antidotes
Zoghi, Milad; Goharrizi, Arash Yazdanpanah; Saremi, Mehdi
2017-01-01
The electronic properties of armchair graphene nanoribbons (AGNRs) can be changed by creating antidotes within the pristine ribbons and producing antidote super lattice AGNRs (ASL-AGNRs). In the present work, band gap tuning of ASL-AGNRs is investigated by varying the width of ribbons ( d W) and the distance between antidotes ( d L) for five different antidote topologies. Numerical tight-binding model is applied to obtain the band structure of the ribbons. Based on our results, it is found that the band gap of ASL-AGNRs can be increased or decreased in different cases. Furthermore, changing the width of ribbons generally results in more predictable␣band gap profiles compared to the variation of distance between antidotes. Consequently, by opting appropriate antidote topologies and dimensional parameters ( d W and d L), it is possible to gain a desired band gap size. This can be considered as an alternative solution in design of electronic and optoelectronic devices where tunable band gap values are needed.
Origins of electronic band gap reduction in Cr/N codoped TiO2.
Parks Cheney, C; Vilmercati, P; Martin, E W; Chiodi, M; Gavioli, L; Regmi, M; Eres, G; Callcott, T A; Weitering, H H; Mannella, N
2014-01-24
Recent studies indicated that noncompensated cation-anion codoping of wide-band-gap oxide semiconductors such as anatase TiO2 significantly reduces the optical band gap and thus strongly enhances the absorption of visible light [W. Zhu et al., Phys. Rev. Lett. 103, 226401 (2009)]. We used soft x-ray spectroscopy to fully determine the location and nature of the impurity levels responsible for the extraordinarily large (∼1 eV) band gap reduction of noncompensated codoped rutile TiO2. It is shown that Cr/N codoping strongly enhances the substitutional N content, compared to single element doping. The band gap reduction is due to the formation of Cr 3d3 levels in the lower half of the gap while the conduction band minimum is comprised of localized Cr 3d and delocalized N 2p states. Band gap reduction and carrier delocalization are critical elements for efficient light-to-current conversion in oxide semiconductors. These findings thus raise the prospect of using codoped oxide semiconductors with specifically engineered electronic properties in a variety of photovoltaic and photocatalytic applications.
Adegoke, Oluwasesan; Park, Enoch Y.
2016-06-01
The development of alloyed quantum dot (QD) nanocrystals with attractive optical properties for a wide array of chemical and biological applications is a growing research field. In this work, size-tunable engineered band gap composition-dependent alloying and fixed-composition alloying were employed to fabricate new L-cysteine-capped alloyed quaternary CdZnTeS QDs exhibiting different internal structures. Lattice parameters simulated based on powder X-ray diffraction (PXRD) revealed the internal structure of the composition-dependent alloyed CdxZnyTeS QDs to have a gradient nature, whereas the fixed-composition alloyed QDs exhibited a homogenous internal structure. Transmission electron microscopy (TEM) and dynamic light scattering (DLS) analysis confirmed the size-confined nature and monodispersity of the alloyed nanocrystals. The zeta potential values were within the accepted range of colloidal stability. Circular dichroism (CD) analysis showed that the surface-capped L-cysteine ligand induced electronic and conformational chiroptical changes in the alloyed nanocrystals. The photoluminescence (PL) quantum yield (QY) values of the gradient alloyed QDs were 27–61%, whereas for the homogenous alloyed QDs, the PL QY values were spectacularly high (72–93%). Our work demonstrates that engineered fixed alloying produces homogenous QD nanocrystals with higher PL QY than composition-dependent alloying.
Quantum electrodynamics near a photonic band-gap
Liu, Yanbing; Houck, Andrew
Quantum electrodynamics predicts the localization of light around an atom in photonic band-gap (PBG) medium or photonic crystal. Here we report the first experimental realization of the strong coupling between a single artificial atom and an one dimensional PBG medium using superconducting circuits. In the photonic transport measurement, we observe an anomalous Lamb shift and a large band-edge avoided crossing when the artificial atom frequency is tuned across the band-edge. The persistent peak within the band-gap indicates the single photon bound state. Furthermore, we study the resonance fluorescence of this bound state, again demonstrating the breakdown of the Born-Markov approximation near the band-edge. This novel architecture can be directly generalized to study many-body quantum electrodynamics and to construct more complicated spin chain models.
Two-Dimensional Phononic-Photonic Band Gap Optomechanical Crystal Cavity
Safavi-Naeini, Amir H.; Hill, Jeff T.; Meenehan, Seán; Chan, Jasper; Gröblacher, Simon; Painter, Oskar
2014-04-01
We present the fabrication and characterization of an artificial crystal structure formed from a thin film of silicon that has a full phononic band gap for microwave X-band phonons and a two-dimensional pseudo-band gap for near-infrared photons. An engineered defect in the crystal structure is used to localize optical and mechanical resonances in the band gap of the planar crystal. Two-tone optical spectroscopy is used to characterize the cavity system, showing a large coupling (g0/2π≈220 kHz) between the fundamental optical cavity resonance at ωo/2π =195 THz and colocalized mechanical resonances at frequency ωm/2π ≈9.3 GHz.
Kohn-Sham potential with discontinuity for band gap materials
Kuisma, M.; Ojanen, J.; Enkovaara, J.; Rantala, T. T.
2010-09-01
We model a Kohn-Sham potential with the discontinuity at integer particle numbers starting from the approximation by (GLLB) Gritsenko [Phys. Rev. A 51, 1944 (1995)10.1103/PhysRevA.51.1944]. We evaluate the Kohn-Sham gap and the discontinuity to obtain the quasiparticle gap. This allows us to compare the Kohn-Sham gaps to those obtained by accurate many-body perturbation-theory-based optimized potential methods. In addition, the resulting quasiparticle band gap is compared to experimental gaps. In the GLLB model potential, the exchange-correlation hole is modeled using a generalized gradient approximation (GGA) energy density and the response of the hole-to-density variations is evaluated by using the common-denominator approximation and homogeneous electron-gas-based assumptions. In our modification, we have chosen the PBEsol potential as the GGA to model the exchange hole and add a consistent correlation potential. The method is implemented in the GPAW code, which allows efficient parallelization to study large systems. A fair agreement for Kohn-Sham and the quasiparticle band gaps with semiconductors and other band gap materials is obtained with a potential which is as fast as GGA to calculate.
Band engineering of thermoelectric materials.
Pei, Yanzhong; Wang, Heng; Snyder, G J
2012-12-01
Lead chalcogenides have long been used for space-based and thermoelectric remote power generation applications, but recent discoveries have revealed a much greater potential for these materials. This renaissance of interest combined with the need for increased energy efficiency has led to active consideration of thermoelectrics for practical waste heat recovery systems-such as the conversion of car exhaust heat into electricity. The simple high symmetry NaCl-type cubic structure, leads to several properties desirable for thermoelectricity, such as high valley degeneracy for high electrical conductivity and phonon anharmonicity for low thermal conductivity. The rich capabilities for both band structure and microstructure engineering enable a variety of approaches for achieving high thermoelectric performance in lead chalcogenides. This Review focuses on manipulation of the electronic and atomic structural features which makes up the thermoelectric quality factor. While these strategies are well demonstrated in lead chalcogenides, the principles used are equally applicable to most good thermoelectric materials that could enable improvement of thermoelectric devices from niche applications into the mainstream of energy technologies.
Uniaxially stressed germanium with fundamental direct band gap
Geiger, R.; Zabel, T.; Marin, E; Gassenq, A.; Hartmann, J.-M.; Widiez, J.; Escalante, J.; Guilloy, K.; Pauc, N.; Rouchon, D.; Diaz, G. Osvaldo; Tardif, S; Rieutord, F.; Duchemin, I.; Niquet, Y. -M.
2015-01-01
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with n...
Wide band gap carbon allotropes: Inspired by zeolite-nets
Wei, Zhi-Jing; Zhao, Hui-Yan; Wang, Jing; Liu, Ying
2016-10-01
Based on the topologies proposed for zeolites, six metastable semiconductor carbon allotropes with band gaps of 2.72-3.89 eV are predicted using ab initio density functional calculations. The hardnesses of these allotropes are about 90%-94% that of diamond, indicating that they may be superhard materials. We also present simulated X-ray diffraction spectra of these new carbon allotropes to provide a basis for possible experimental observations and synthesis. These new carbon structures with a range of band gaps and with hardnesses comparable to diamond could be potential targets for the synthesis of hard and transparent materials.
Amorphous Photonic Lattices: Band Gaps, Effective Mass and Suppressed Transport
Rechtsman, Mikael; Dreisow, Felix; Heinrich, Matthias; Keil, Robert; Nolte, Stefan; Segev, Mordechai
2010-01-01
We present, theoretically and experimentally, amorphous photonic lattices exhibiting a band-gap yet completely lacking Bragg diffraction: 2D waveguides distributed randomly according to a liquid-like model responsible for the absence of Bragg peaks as opposed to ordered lattices containing disorder, which always exhibit Bragg peaks. In amorphous lattices the bands are comprised of localized states, but we find that defect states residing in the gap are more localized than the Anderson localization length. Finally, we show how the concept of effective mass carries over to amorphous lattices.
Absolute band gaps in two-dimensional graphite photonic crystal
Institute of Scientific and Technical Information of China (English)
Gaoxin Qiu(仇高新); Fanglei Lin(林芳蕾); Hua Wang(王华); Yongping Li(李永平)
2003-01-01
The off-plane propagation of electromagnetic (EM) waves in a two-dimensional (2D) graphite photoniccrystal structure was studied using transfer matrix method. Transmission spectra calculations indicatethat such a 2D structure has a common band gap from 0.202 to 0.2035 c/a for both H and E polarizationsand for all off-plane angles form 0° up to 90°. The presence of such an absolute band gap implies that 2Dgraphite photonic crystal, which is much easier and more feasible to fabricate, can exhibit some propertiesof a three-dimensional (3D) photonic crystal.
Large area modules based on low band gap polymers
DEFF Research Database (Denmark)
Bundgaard, Eva; Krebs, Frederik C
2010-01-01
The use of three low band gap polymers in large area roll-to-roll coated modules is demonstrated. The polymers were prepared by a Stille cross coupling polymerization and all had a band gap around 1.6 eV. The polymers were first tested in small area organic photovoltaic devices which showed...... efficiencies from 0.4 to 2 %. Then large area roll-to-roll coated modules were processed and these showed efficiencies up to 0.6 %. It is clear that further study is necessary before this type of polymer is competitive with P3HT in large area modules....
Band gap tuning of amorphous Al oxides by Zr alloying
DEFF Research Database (Denmark)
Canulescu, Stela; Jones, N. C.; Borca, C. N.;
2016-01-01
minimum changes non-linearly as well.Fitting of the energy band gap values resulted in a bowing parameter of 2 eV. The band gap bowing of themixed oxides is assigned to the presence of the Zr d-electron states localized below the conduction bandminimum of anodized Al2O3.......The optical band gap and electronic structure of amorphous Al-Zr mixed oxides, with Zr content ranging from4.8 to 21.9% were determined using vacuum ultraviolet (VUV) and X-ray absorption spectroscopy (XAS). Thelight scattering by the nano-porous structure of alumina at low wavelengths...... was estimated based on the Miescattering theory. The dependence of the optical band gap of the Al-Zr mixed oxides on Zr content deviatesfrom linearity and decreases from 7.3 eV for pure anodized Al2O3 to 6.45 eV for Al-Zr mixed oxide with Zrcontent of 21.9%. With increasing Zr content, the conduction band...
Gap engineering in strained fold-like armchair graphene nanoribbons
Torres, V.; León, C.; Faria, D.; Latgé, A.
2017-01-01
Strained fold-like deformations on armchair graphene nanoribbons (AGNRs) can be properly engineered in experimental setups, and could lead to a controlling tool for gaps and transport properties. Here, we analyze the electronic properties of folded AGNRs relating to the electronic responses and the mechanical deformation. An important and universal parameter for the gap engineering is the ribbon percent-width variation, i.e., the difference between the deformed and undeformed ribbon widths. AGNRs band gap can be tuned mechanically in a well-defined bounded range of energy values, eventually leading to a metallic system. This characteristic provides a controllable degree of freedom that allows manipulation of electronic currents. We show that the numerical results are analytically predicted by solving the Dirac equation for the strained system.
Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon.
Zhu, Zhen; Shao, Hezhu; Dong, Xiao; Li, Ning; Ning, Bo-Yuan; Ning, Xi-Jing; Zhao, Li; Zhuang, Jun
2015-05-27
We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can introduce intermediate band in the gap. Considering the stability of the single defects and the rapid resolidification following the laser melting process in our sample preparation method, we conclude that the substitutional nitrogen defect, whose fraction was tiny and could be neglected before, should have considerable fraction in the hyperdoped silicon and results in the visible sub-band-gap absorption as observed in the experiment. Furthermore, our calculations show that the substitutional nitrogen defect has good stability, which could be one of the reasons why the sub-band-gap absorptance remains almost unchanged after annealing.
Electroluminescence from indirect band gap semiconductor ReS2
Gutiérrez-Lezama, Ignacio; Aditya Reddy, Bojja; Ubrig, Nicolas; Morpurgo, Alberto F.
2016-12-01
It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS2 are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient opto-electronic devices. The situation is however unclear, because even more recently an indirect transition in the PL spectra of this material has been detected, whose energy is smaller than the supposed direct gap. To address this issue we exploit the properties of ionic liquid gated field-effect transistors (FETs) to investigate the gap structure of bulk ReS2. Using these devices, whose high quality is demonstrated by a record high electron FET mobility of 1100 cm2 V-1 s-1 at 4 K, we can induce hole transport at the surface of the material and determine quantitatively the smallest band gap present in the material, irrespective of its direct or indirect nature. The value of the band gap is found to be 1.41 eV, smaller than the 1.5 eV direct optical transition but in good agreement with the energy of the indirect optical transition, providing an independent confirmation that bulk ReS2 is an indirect band gap semiconductor. Nevertheless, contrary to the case of more commonly studied semiconducting TMDs (e.g., MoS2, WS2, etc) in their bulk form, we also find that ReS2 FETs fabricated on bulk crystals do exhibit electroluminescence when driven in the ambipolar injection regime, likely because the difference between direct and indirect gap is only 100 meV. We conclude that ReS2 does deserve more in-depth investigations in relation to possible opto-electronic applications.
Study of indium nitride and indium oxynitride band gaps
Directory of Open Access Journals (Sweden)
M. Sparvoli
2013-01-01
Full Text Available This work shows the study of the optical band gap of indium oxynitride (InNO and indium nitride (InN deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage current. The deposition processes were performed in a magnetron sputtering system using a four-inches pure In (99.999% target and nitrogen and oxygen as plasma gases. The pressure was kept constant at 1.33 Pa and the RF power (13.56 MHz constant at 250 W. Three-inches diameter silicon wafer with 370 micrometer thickness and resistivity in the range of 10 ohm-centimeter was used as substrate. The thin films were analyzed by UV-Vis-NIR reflectance, photoluminescence (PL and Hall Effect. The band gap was obtained from Tauc analysis of the reflectance spectra and photoluminescence. The band gap was evaluated for both films: for InNO the value was 2.48 eV and for InN, 1.52 eV. The relative quantities obtained from RBS spectra analysis in InNO sample are 48% O, 12% N, 40% In and in InN sample are 8% O, 65% N, 27% In.
Design for maximum band-gaps in beam structures
DEFF Research Database (Denmark)
Olhoff, Niels; Niu, Bin; Cheng, Gengdong
2012-01-01
This paper aims to extend earlier optimum design results for transversely vibrating Bernoulli-Euler beams by determining new optimum band-gap beam structures for (i) different combinations of classical boundary conditions, (ii) much larger values of the orders n and n-1 of adjacent upper and lower...
Experimental studies of surface plasmon polariton band gap effect
DEFF Research Database (Denmark)
Volkov, V. S.; Bozhevolnyi, S. I.; Leosson, K.;
2003-01-01
the dependence of the SPP band gap (SPPBG) effect manifested via the SPP reflection and guiding (along line defects) on the parameters of the surface structures (period, filling factor and lattice orientation). We find that the SPPBG effect is stronger along &ggr;K direction for all investigated periodic...
Analysis of photonic band-gap structures in stratified medium
DEFF Research Database (Denmark)
Tong, Ming-Sze; Yinchao, Chen; Lu, Yilong;
2005-01-01
Purpose - To demonstrate the flexibility and advantages of a non-uniform pseudo-spectral time domain (nu-PSTD) method through studies of the wave propagation characteristics on photonic band-gap (PBG) structures in stratified medium Design/methodology/approach - A nu-PSTD method is proposed...
Strain sensitivity of band gaps of Sn-containing semiconductors
DEFF Research Database (Denmark)
Li, Hong; Castelli, Ivano Eligio; Thygesen, Kristian Sommer
2015-01-01
Tuning of band gaps of semiconductors is a way to optimize materials for applications within photovoltaics or as photocatalysts. One way to achieve this is through applying strain to the materials. We investigate the effect of strain on a range of Sn-containing semiconductors using density...
Topological Design of Cellular Phononic Band Gap Crystals
Directory of Open Access Journals (Sweden)
Yang Fan Li
2016-03-01
Full Text Available This paper systematically investigated the topological design of cellular phononic crystals with a maximized gap size between two adjacent bands. Considering that the obtained structures may sustain a certain amount of static loadings, it is desirable to ensure the optimized designs to have a relatively high stiffness. To tackle this issue, we conducted a multiple objective optimization to maximize band gap size and bulk or shear modulus simultaneously with a prescribed volume fraction of solid material so that the resulting structures can be lightweight, as well. In particular, we first conducted the finite element analysis of the phononic band gap crystals and then adapted a very efficient optimization procedure to resolve this problem based on bi-directional evolutionary structure optimization (BESO algorithm in conjunction with the homogenization method. A number of optimization results for maximizing band gaps with bulk and shear modulus constraints are presented for out-of-plane and in-plane modes. Numerical results showed that the optimized structures are similar to those obtained for composite case, except that additional slim connections are added in the cellular case to support the propagation of shear wave modes and meanwhile to satisfy the prescribed bulk or shear modulus constraints.
Robust topology optimization of three-dimensional photonic-crystal band-gap structures
Men, Han; Freund, Robert M; Peraire, Jaime; Johnson, Steven G
2014-01-01
We perform full 3D topology optimization (in which "every voxel" of the unit cell is a degree of freedom) of photonic-crystal structures in order to find optimal omnidirectional band gaps for various symmetry groups, including fcc (including diamond), bcc, and simple-cubic lattices. Even without imposing the constraints of any fabrication process, the resulting optimal gaps are only slightly larger than previous hand designs, suggesting that current photonic crystals are nearly optimal in this respect. However, optimization can discover new structures, e.g. a new fcc structure with the same symmetry but slightly larger gap than the well known inverse opal, which may offer new degrees of freedom to future fabrication technologies. Furthermore, our band-gap optimization is an illustration of a computational approach to 3D dispersion engineering which is applicable to many other problems in optics, based on a novel semidefinite-program formulation for nonconvex eigenvalue optimization combined with other techniq...
Energy Technology Data Exchange (ETDEWEB)
Pietzsch, A., E-mail: annette.pietzsch@helmholtz-berlin.de [Institute for Methods and Instrumentation in Synchrotron Radiation Research G-ISRR, Helmholtz-Zentrum für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489 Berlin (Germany); Nisar, J. [Pakistan Atomic Energy Commission (PAEC), P.O. Box 2151, Islamabad (Pakistan); Jämstorp, E. [Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Gråsjö, J. [Department of Pharmacy, Uppsala University, Box 580, 75123 Uppsala (Sweden); Århammar, C. [Coromant R& D, S-126 80 Stockholm (Sweden); Ahuja, R.; Rubensson, J.-E. [Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala (Sweden)
2015-07-15
Highlights: • The respective electronic structure of synthetic and natural kaolinite is compared. • The size of the band gap and thus many important material properties are defined by defect states in the band gap. • The oxygen-based defect states are identified and analyzed. • The band gap of kaolinite decreases significantly due to the forming of defects. - Abstract: By combining X-ray absorption spectroscopy and first principles calculations we have determined the electronic structure of synthetic and natural kaolinite as a model system for engineered and natural clay materials. We have analyzed defect states in the band gap and find that both natural and synthetic kaolinite contain defects where oxygen replaces hydrogen in one of the Al (0 0 1)-hydroxyl groups of the kaolinite clay sheets. The band gap of both synthetic and natural kaolinite is found to decrease by about 3.2 eV as this defect is formed.
Low Loss Plastic Terahertz Photonic Band-Gap Fibres
Institute of Scientific and Technical Information of China (English)
GENG You-Fu; TAN Xiao-Ling; ZHONG Kai; WANG Peng; YAO Jian-Quan
2008-01-01
We report a numerical investigation on terahertz wave propagation in plastic photonic band-gap fibres which are characterized by a 19-unit-cell air core and hexagonal air holes with rounded corners in cladding. Using the finite element method, the leakage loss and absorption loss are calculated and the transmission properties are analysed.The lowest loss of 0.268 dB/m is obtained. Numerical results show that the fibres could liberate the constraints of background materials beyond the transparency region in terahertz wave band, and efficiently minimize the effect of absorption by background materials, which present great advantage of plastic photonic band-gap fibres in long distance terahertz delivery.
Ion-gap sensing for engine control
Energy Technology Data Exchange (ETDEWEB)
NONE
1995-09-01
This article reports that in addition to detecting misfire to conform with California onboard diagnostic (OBD II) regulations, Delco Electronics and Mecel AB engineers are looking at ion-gap sensing to control knock, A/F ratio, and other possible engine control parameters. The combustion of fuel in an engine cylinder produces ions. Detection of those ions by the spark plug (ion-gap sensing), and use of the resulting ion currents, has been employed in engine management systems since 1988. Saab introduced the first application, for cam-phase sensing. The main driving force for ion-gap sensing is OBD II requirements for 100% misfire detection at all speeds and loads. The technique has been expanded in subsequent applications to include misfire, knock, and pre-ignition detection and control, and more recently in combustion-ion detection using a capacitance-type, ion-current measurement method. Use of the ion current`s wave shape to control knock allows elimination of the separate piezoelectric type (PZT) sensor. Future applications could provide additional engine-control features including air/fuel ratio measurement and control.
Slow light and band gaps in metallodielectric cylinder arrays.
Shainline, Jeffrey M; Xu, Jimmy
2009-05-25
We consider two-dimensional three-component photonic crystals wherein one component is modeled as a drude-dispersive metal. It is found that the dispersion relation of light in this environment depends critically on the configuration of the metallic and dielectric components. In particular, for the case of an incident electromagnetic wave with electric field vector parallel to the axis of the cylinders it is shown that the presence of dielectric shells covering the metallic cylinders leads to a closing of the structural band gap with increased filling factor, as would be expected for a purely dielectric photonic crystal. For the same polarization, the photonic band structure of an array of metallic shell cylinders with dielectric cores do not show the closing of the structural band gap with increased filling factor of the metallic component. In this geometry, the photonic band structure contains bands with very small values of group velocity with some bands having a maximum of group velocity as small as .05c.
The calculation of band gap energy in zinc oxide films
Arif, Ali; Belahssen, Okba; Gareh, Salim; Benramache, Said
2015-01-01
We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor; the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques. The thin films were deposited at different substrate temperatures ranging between 200 and 500 °C. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures from experimental data, which were published in international journals. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96-0.99999, indicating high quality representation of data based on Equation (2), so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy.
Anomalous Temperature Dependence of the Band Gap in Black Phosphorus.
Villegas, Cesar E P; Rocha, A R; Marini, Andrea
2016-08-10
Black phosphorus (BP) has gained renewed attention due to its singular anisotropic electronic and optical properties that might be exploited for a wide range of technological applications. In this respect, the thermal properties are particularly important both to predict its room temperature operation and to determine its thermoelectric potential. From this point of view, one of the most spectacular and poorly understood phenomena is indeed the BP temperature-induced band gap opening; when temperature is increased, the fundamental band gap increases instead of decreases. This anomalous thermal dependence has also been observed recently in its monolayer counterpart. In this work, based on ab initio calculations, we present an explanation for this long known and yet not fully explained effect. We show that it arises from a combination of harmonic and lattice thermal expansion contributions, which are in fact highly interwined. We clearly narrow down the mechanisms that cause this gap opening by identifying the peculiar atomic vibrations that drive the anomaly. The final picture we give explains both the BP anomalous band gap opening and the frequency increase with increasing volume (tension effect).
Hollow-Core Photonic Band Gap Fibers for Particle Acceleration
Energy Technology Data Exchange (ETDEWEB)
Noble, Robert J.; Spencer, James E.; /SLAC; Kuhlmey, Boris T.; /Sydney U.
2011-08-19
Photonic band gap (PBG) dielectric fibers with hollow cores are being studied both theoretically and experimentally for use as laser driven accelerator structures. The hollow core functions as both a longitudinal waveguide for the transverse-magnetic (TM) accelerating fields and a channel for the charged particles. The dielectric surrounding the core is permeated by a periodic array of smaller holes to confine the mode, forming a photonic crystal fiber in which modes exist in frequency pass-bands, separated by band gaps. The hollow core acts as a defect which breaks the crystal symmetry, and so-called defect, or trapped modes having frequencies in the band gap will only propagate near the defect. We describe the design of 2-D hollow-core PBG fibers to support TM defect modes with high longitudinal fields and high characteristic impedance. Using as-built dimensions of industrially-made fibers, we perform a simulation analysis of the first prototype PBG fibers specifically designed to support speed-of-light TM modes.
Photovoltaic properties of low band gap ferroelectric perovskite oxides
Huang, Xin; Paudel, Tula; Dong, Shuai; Tsymbal, Evgeny
2015-03-01
Low band gap ferroelectric perovskite oxides are promising for photovoltaic applications due to their high absorption in the visible optical spectrum and a possibility of having large open circuit voltage. Additionally, an intrinsic electric field present in these materials provides a bias for electron-hole separation without requiring p-n junctions as in conventional solar cells. High quality thin films of these compounds can be grown with atomic layer precision allowing control over surface and defect properties. Initial screening based on the electronic band gap and the energy dependent absorption coefficient calculated within density functional theory shows that hexagonal rare-earth manganites and ferrites are promising as photovoltaic absorbers. As a model, we consider hexagonal TbMnO3. This compound has almost ideal band gap of about 1.4 eV, very high ferroelectric Curie temperature, and can be grown epitaxially. Additionally hexagonal TbMnO3 offers possibility of coherent structure with transparent conductor ZnO. We find that the absorption is sufficiently high and dominated by interband transitions between the Mn d-bands. We will present the theoretically calculated photovoltaic efficiency of hexagonal TbMnO3 and explore other ferroelectric perovskite oxides.
Two-dimensional boron-nitrogen-carbon monolayers with tunable direct band gaps
Zhang, Miao; Gao, Guoying; Kutana, Alex; Wang, Yanchao; Zou, Xiaolong; Tse, John S.; Yakobson, Boris I.; Li, Hongdong; Liu, Hanyu; Ma, Yanming
2015-07-01
The search for new candidate semiconductors with direct band gaps of ~1.4 eV has attracted significant attention, especially among the two-dimensional (2D) materials, which have become potential candidates for next-generation optoelectronics. Herein, we systematically studied 2D Bx/2Nx/2C1-x (0 optimization method (CALYPSO) in conjunction with density functional theory. Furthermore, we examine more stoichiometries by the cluster expansion technique based on a hexagonal lattice. The results reveal that all monolayer Bx/2Nx/2C1-x stoichiometries adopt a planar honeycomb character and are dynamically stable. Remarkably, electronic structural calculations show that most of Bx/2Nx/2C1-x phases possess direct band gaps within the optical range, thereby they can potentially be used in high-efficiency conversion of solar energy to electric power, as well as in p-n junction photovoltaic modules. The present results also show that the band gaps of Bx/2Nx/2C1-x can be widely tuned within the optical range by changing the concentration of carbon, thus allowing the fast development of band gap engineered materials in optoelectronics. These new findings may enable new approaches to the design of microelectronic devices.The search for new candidate semiconductors with direct band gaps of ~1.4 eV has attracted significant attention, especially among the two-dimensional (2D) materials, which have become potential candidates for next-generation optoelectronics. Herein, we systematically studied 2D Bx/2Nx/2C1-x (0 optimization method (CALYPSO) in conjunction with density functional theory. Furthermore, we examine more stoichiometries by the cluster expansion technique based on a hexagonal lattice. The results reveal that all monolayer Bx/2Nx/2C1-x stoichiometries adopt a planar honeycomb character and are dynamically stable. Remarkably, electronic structural calculations show that most of Bx/2Nx/2C1-x phases possess direct band gaps within the optical range, thereby they can
Natural Gas Engine Development Gaps (Presentation)
Energy Technology Data Exchange (ETDEWEB)
Zigler, B.T.
2014-03-01
A review of current natural gas vehicle offerings is presented for both light-duty and medium- and heavy-duty applications. Recent gaps in the marketplace are discussed, along with how they have been or may be addressed. The stakeholder input process for guiding research and development needs via the Natural Gas Vehicle Technology Forum (NGVTF) to the U.S. Department of Energy and the California Energy Commission is reviewed. Current high-level natural gas engine development gap areas are highlighted, including efficiency, emissions, and the certification process.
Robust topology optimization of three-dimensional photonic-crystal band-gap structures.
Men, H; Lee, K Y K; Freund, R M; Peraire, J; Johnson, S G
2014-09-22
We perform full 3D topology optimization (in which "every voxel" of the unit cell is a degree of freedom) of photonic-crystal structures in order to find optimal omnidirectional band gaps for various symmetry groups, including fcc (including diamond), bcc, and simple-cubic lattices. Even without imposing the constraints of any fabrication process, the resulting optimal gaps are only slightly larger than previous hand designs, suggesting that current photonic crystals are nearly optimal in this respect. However, optimization can discover new structures, e.g. a new fcc structure with the same symmetry but slightly larger gap than the well known inverse opal, which may offer new degrees of freedom to future fabrication technologies. Furthermore, our band-gap optimization is an illustration of a computational approach to 3D dispersion engineering which is applicable to many other problems in optics, based on a novel semidefinite-program formulation for nonconvex eigenvalue optimization combined with other techniques such as a simple approach to impose symmetry constraints. We also demonstrate a technique for robust topology optimization, in which some uncertainty is included in each voxel and we optimize the worst-case gap, and we show that the resulting band gaps have increased robustness to systematic fabrication errors.
Band gap determination of Ni–Zn ferrites
Indian Academy of Sciences (India)
G P Joshi; N S Saxena; R Mangal; A Mishra; T P Sharma
2003-06-01
Nanocomposites of Ni–Zn with copolymer matrix of aniline and formaldehyde in presence of varying concentrations of zinc ions have been studied at room temperature and normal pressure. The energy band gap of these materials are determined by reflection spectra in the wavelength range 400–850 nm by spectrophotometer at room temperature. From the analysis of reflection spectra, nanocomposites of copolymer of aniline and formaldehyde with Ni$_{1–x}$Zn$_x$Fe2O4 ( = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) have been found to have direct band gaps ranging from 1.50–1.66 eV.
On acoustic band gaps in homogenized piezoelectric phononic materials
Directory of Open Access Journals (Sweden)
Rohan E.
2010-07-01
Full Text Available We consider a composite medium made of weakly piezoelectric inclusions periodically distributed in the matrix which ismade of a different piezoelectricmaterial. Themediumis subject to a periodic excitation with an incidence wave frequency independent of scale ε of the microscopic heterogeneities. Two-scale method of homogenization is applied to obtain the limit homogenized model which describes acoustic wave propagation in the piezoelectric medium when ε → 0. In analogy with the purely elastic composite, the resulting model allows existence of the acoustic band gaps. These are identified for certain frequency ranges whenever the so-called homogenized mass becomes negative. The homogenized model can be used for band gap prediction and for dispersion analysis for low wave numbers. Modeling such composite materials seems to be perspective in the context of Smart Materials design.
Microscopic theory of photonic band gaps in optical lattices
Samoylova, M; Bachelard, R; Courteille, Ph W
2013-01-01
We propose a microscopic model to describe the scattering of light by atoms in optical lattices. The model is shown to efficiently capture Bragg scattering, spontaneous emission and photonic band gaps. A connection to the transfer matrix formalism is established in the limit of a one-dimensional optical lattice, and we find the two theories to yield results in good agreement. The advantage of the microscopic model is, however, that it suits better for studies of finite-size and disorder effects.
One-dimensional photonic band gaps in optical lattices
Samoylova, Marina; Holynski, Michael; Courteille, Philippe Wilhelm; Bachelard, Romain
2013-01-01
The phenomenon of photonic band gaps in one-dimensional optical lattices is reviewed using a microscopic approach. Formally equivalent to the transfer matrix approach in the thermodynamic limit, a microscopic model is required to study finite-size effects, such as deviations from the Bragg condition. Microscopic models describing both scalar and vectorial light are proposed, as well as for two- and three-level atoms. Several analytical results are compared to experimental data, showing a good agreement.
Perovskite-perovskite tandem photovoltaics with optimized band gaps
Eperon, Giles E.; Leijtens, Tomas; Bush, Kevin A.; Prasanna, Rohit; Green, Thomas; Wang, Jacob Tse-Wei; McMeekin, David P.; Volonakis, George; Milot, Rebecca L.; May, Richard; Palmstrom, Axel; Slotcavage, Daniel J.; Belisle, Rebecca A.; Patel, Jay B.; Parrott, Elizabeth S.; Sutton, Rebecca J.; Ma, Wen; Moghadam, Farhad; Conings, Bert; Babayigit, Aslihan; Boyen, Hans-Gerd; Bent, Stacey; Giustino, Feliciano; Herz, Laura M.; Johnston, Michael B.; McGehee, Michael D.; Snaith, Henry J.
2016-11-01
We demonstrate four- and two-terminal perovskite-perovskite tandem solar cells with ideally matched band gaps. We develop an infrared-absorbing 1.2-electron volt band-gap perovskite, FA0.75Cs0.25Sn0.5Pb0.5I3, that can deliver 14.8% efficiency. By combining this material with a wider-band gap FA0.83Cs0.17Pb(I0.5Br0.5)3 material, we achieve monolithic two-terminal tandem efficiencies of 17.0% with >1.65-volt open-circuit voltage. We also make mechanically stacked four-terminal tandem cells and obtain 20.3% efficiency. Notably, we find that our infrared-absorbing perovskite cells exhibit excellent thermal and atmospheric stability, not previously achieved for Sn-based perovskites. This device architecture and materials set will enable “all-perovskite” thin-film solar cells to reach the highest efficiencies in the long term at the lowest costs.
Two novel silicon phases with direct band gaps.
Fan, Qingyang; Chai, Changchun; Wei, Qun; Yang, Yintang
2016-05-14
Due to its abundance, silicon is the preferred solar-cell material despite the fact that many silicon allotropes have indirect band gaps. Elemental silicon has a large impact on the economy of the modern world and is of fundamental importance in the technological field, particularly in the solar cell industry. Looking for direct band gap silicon is still an important field in material science. Based on density function theory with the ultrasoft pseudopotential scheme in the frame of the local density approximation and the generalized gradient approximation, we have systematically studied the structural stability, absorption spectra, electronic, optical and mechanical properties and minimum thermal conductivity of two novel silicon phases, Cm-32 silicon and P21/m silicon. These are both thermally, dynamically and mechanically stable. The absorption spectra of Cm-32 silicon and P21/m silicon exhibit significant overlap with the solar spectrum and thus, excellent photovoltaic efficiency with great improvements over Fd3[combining macron]m Si. These two novel Si structures with direct band gaps could be applied in single p-n junction thin-film solar cells or tandem photovoltaic devices.
Electronic materials with a wide band gap: recent developments
Directory of Open Access Journals (Sweden)
Detlef Klimm
2014-09-01
Full Text Available The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = 0.66 eV after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = 1.12 eV. This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with wider Eg were obtained. These are transparent to visible light and belong to the group of wide band gap semiconductors. Nowadays, some nitrides, especially GaN and AlN, are the most important materials for optical emission in the ultraviolet and blue regions. Oxide crystals, such as ZnO and β-Ga2O3, offer similarly good electronic properties but still suffer from significant difficulties in obtaining stable and technologically adequate p-type conductivity.
Band gap transmission in periodic bistable mechanical systems
Frazier, Michael J.; Kochmann, Dennis M.
2017-02-01
We theoretically and numerically investigate the supratransmission phenomenon in discrete, nonlinear systems containing bistable elements. While linear waves cannot propagate within the band gaps of periodic structures, supratransmission allows large-amplitude waves to transmit energy through the band gap. For systems lacking bistability, the threshold amplitude for such energy transmission at a given frequency in the linear band gap is fixed. We show that the topological transitions due to bistability provide an avenue for switching the threshold amplitude between two well-separated values. Moreover, this versatility is achieved while leaving the linear dispersion properties of the system essentially unchanged. Interestingly, the behavior changes when an elastic chain is coupled to bistable resonators (in an extension of the well-studied linear locally resonant metamaterials). Here, we show that a fraction of the injected energy is confined near the boundary due to the resonators, providing a means of regulating the otherwise unrestrained energy flow due to supratransmission. Together, the results illustrate new means of controlling nonlinear wave propagation and energy transport in systems having multi-stable elements.
Characterization of all-glass photonic band gap fiber
Buczynski, Ryszard; Kujawa, Ireneusz; Lusawa, Marzenna; Pysz, Dariusz; Martynkien, Tadeusz; Berghmans, Francis; Nasilowski, Tomasz; Thienpont, Hugo; Stepien, Ryszard
2008-12-01
In this paper we report on the fabrication and characterization of a double glass micro-structured fiber with low index core and photonic cladding made of high index micro-rods. Micro rods are made of lead-oxide F2 commercially available glass (SCHOTT Inc.) with a refractive index nD=1.619, while as background we use a borosilicate NC21 glass with a refractive index nD=1.533. The fiber cladding is composed of 8 rings of F2 glass micro rods ordered in hexagonal lattice. A core is created by replacement of seven F2 rods with NC21 rods. A fabricated fiber has a linear filling factor of 0.75 and micro rods diameter of 1.2 μm. A core has a diameter of 3.7 μm while cladding and total fiber diameter are 42,6μm and 120 μm, respectively. Using supercontinuum source we have measured transmission properties of the fabricated fiber. Based on measurements of the fiber samples of 18-80 cm long we have identified two photonic band gaps. Fist band gap is localized in visible range at 610 nm central wavelength. The second broadband photonic band gap is localized in near infrared and it is 80 nm wide at 840 nm central wavelength.
Electron Elevator: Excitations across the Band Gap via a Dynamical Gap State.
Lim, A; Foulkes, W M C; Horsfield, A P; Mason, D R; Schleife, A; Draeger, E W; Correa, A A
2016-01-29
We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.
Quantum information processing in localized modes of light within a photonic band-gap material
Vats, N; John, S; Vats, Nipun; Rudolph, Terry; John, Sajeev
1999-01-01
The single photon occupation of a localized field mode within an engineered network of defects in a photonic band-gap (PBG) material is proposed as a unit of quantum information (qubit). Qubit operations are mediated by optically-excited atoms interacting with these localized states of light as the atoms traverse the connected void network of the PBG structure. We describe conditions under which this system can have independent qubits with controllable interactions and very low decoherence, as required for quantum computation.
Hydrogen production by tuning the photonic band gap with the electronic band gap of TiO₂.
Waterhouse, G I N; Wahab, A K; Al-Oufi, M; Jovic, V; Anjum, D H; Sun-Waterhouse, D; Llorca, J; Idriss, H
2013-10-10
Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO2 catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO2 (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO2 (PBG-585 nm) photocatalyst and both are higher than Au/TiO2 without the 3 dimensionally ordered macro-porous structure materials. The very high photocatalytic activity is attributed to suppression of a fraction of electron-hole recombination route due to the co-incidence of the PBG with the EBG of TiO2 These materials that maintain their activity with very small amount of sacrificial agents (down to 0.5 vol.% of ethanol) are poised to find direct applications because of their high activity, low cost of the process, simplicity and stability.
Band-structure engineering in conjugated 2D polymers.
Gutzler, Rico
2016-10-26
Conjugated polymers find widespread application in (opto)electronic devices, sensing, and as catalysts. Their common one-dimensional structure can be extended into the second dimension to create conjugated planar sheets of covalently linked molecules. Extending π-conjugation into the second dimension unlocks a new class of semiconductive polymers which as a consequence of their unique electronic properties can find usability in numerous applications. In this article the theoretical band structures of a set of conjugated 2D polymers are compared and information on the important characteristics band gap and valence/conduction band dispersion is extracted. The great variance in these characteristics within the investigated set suggests 2D polymers as exciting materials in which band-structure engineering can be used to tailor sheet-like organic materials with desired electronic properties.
Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys.
Chen, Yanfeng; Xi, Jinyang; Dumcenco, Dumitru O; Liu, Zheng; Suenaga, Kazu; Wang, Dong; Shuai, Zhigang; Huang, Ying-Sheng; Xie, Liming
2013-05-28
Band gap engineering of atomically thin two-dimensional (2D) materials is the key to their applications in nanoelectronics, optoelectronics, and photonics. Here, for the first time, we demonstrate that in the 2D system, by alloying two materials with different band gaps (MoS2 and WS2), tunable band gap can be obtained in the 2D alloys (Mo(1-x)W(x)S(2) monolayers, x = 0-1). Atomic-resolution scanning transmission electron microscopy has revealed random arrangement of Mo and W atoms in the Mo(1-x)W(x)S(2) monolayer alloys. Photoluminescence characterization has shown tunable band gap emission continuously tuned from 1.82 eV (reached at x = 0.20) to 1.99 eV (reached at x = 1). Further, density functional theory calculations have been carried out to understand the composition-dependent electronic structures of Mo(1-x)W(x)S(2) monolayer alloys.
Effect of hydrogenation on the band gap of graphene nano-flakes
Energy Technology Data Exchange (ETDEWEB)
Tachikawa, Hiroto, E-mail: hiroto@eng.hokudai.ac.jp; Iyama, Tetsuji; Kawabata, Hiroshi
2014-03-03
The effects of hydrogenation on the band gap of graphene have been investigated by means of density functional theory method. It is generally considered that the band gap increases with increasing coverage of hydrogen atom on the graphene. However, the present study shows that the band gap decreases first with increasing hydrogen coverage and reaches the lowest value at finite coverage (γ = 0.3). Next, the band gap increases to that of insulator with coverage from 0.3 to 1.0. This specific feature of the band gap is reasonably explained by broken symmetry model and the decrease of pi-conjugation. The electronic states of hydrogenated graphene are discussed. - Highlights: • Density functional theory calculations were carried out for hydrogen on graphene • Effects of hydrogenation on the band gap of graphene were examined. • The band gap showed a minimum at a finite coverage. • Mechanism of specific band gap feature was discussed.
Group IV direct band gap photonics: Methods, Challenges and Opportunities
Directory of Open Access Journals (Sweden)
Richard eGeiger
2015-07-01
Full Text Available The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: The idea is to integrate fully compatible group IV materials with equally favorable optical properties as the chemically incompatible group III-V-based systems. The concept involves either mechanically applied strain on Ge or alloying of Ge with Sn and permits to drastically improve the insufficient radiative efficiency of Ge. The favorable optical properties result from a modified band structure transformed from an indirect to a direct one. The first demonstration of such a direct band gap laser, accomplished in GeSn, exemplifies the capability of this new concept. These systems may permit a qualitative as well as a quantitative expansion of Si-photonics into traditional but also new areas of applications, provided they can be operated energy efficiently, under ambient conditions and integrated with current Si technologies. This review aims to discuss the challenges along this path in terms of fabrication, characterization and fundamental understanding, and will elaborate on evoking opportunities of this new class of group IV-based laser materials.
Group IV direct band gap photonics: Methods, Challenges and Opportunities
Geiger, Richard; Zabel, Thomas; Sigg, Hans
2015-07-01
The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: The idea is to integrate fully compatible group IV materials with equally favorable optical properties as the chemically incompatible group III-V-based systems. The concept involves either mechanically applied strain on Ge or alloying of Ge with Sn and permits to drastically improve the insufficient radiative efficiency of Ge. The favorable optical properties result from a modified band structure transformed from an indirect to a direct one. The first demonstration of such a direct band gap laser, accomplished in GeSn, exemplifies the capability of this new concept. These systems may permit a qualitative as well as a quantitative expansion of Si-photonics into traditional but also new areas of applications, provided they can be operated energy efficiently, under ambient conditions and integrated with current Si technologies. This review aims to discuss the challenges along this path in terms of fabrication, characterization and fundamental understanding, and will elaborate on evoking opportunities of this new class of group IV-based laser materials.
Tolmachev, V; Perova, T; Moore, R
2005-10-17
A method of photonic band gap extension using mixing of periodic structures with two or more consecutively placed photonic crystals with different lattice constants is proposed. For the design of the structures with maximal photonic band gap extension the gap map imposition method is utilised. Optimal structures have been established and the gap map of photonic band gaps has been calculated at normal incidence of light for both small and large optical contrast and at oblique incidence of light for small optical contrast.
CZTS stoichiometry effects on the band gap energy
Energy Technology Data Exchange (ETDEWEB)
Malerba, Claudia, E-mail: claudia.malerba-1@ing.unitn.it [University of Trento, Department of Civil, Environmental and Mechanical Engineering, via Mesiano 77, 38123 Trento (Italy); ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Biccari, Francesco [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Azanza Ricardo, Cristy Leonor [University of Trento, Department of Civil, Environmental and Mechanical Engineering, via Mesiano 77, 38123 Trento (Italy); Valentini, Matteo [Sapienza – University of Rome, Department of Physics, p.le A. Moro 5, 00185 Roma (Italy); ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Chierchia, Rosa [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Müller, Melanie [University of Trento, Department of Civil, Environmental and Mechanical Engineering, via Mesiano 77, 38123 Trento (Italy); Max Planck Institute for Solid State Research, Heisenberg str. 1, 70569 Stuttgart (Germany); Santoni, Antonino [ENEA, Frascati Research Center, via E. Fermi 45, 00044 Frascati (Italy); Esposito, Emilia [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy); Mangiapane, Pietro [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy); Scardi, Paolo [University of Trento, Department of Civil, Environmental and Mechanical Engineering, via Mesiano 77, 38123 Trento (Italy); Mittiga, Alberto [ENEA, Casaccia Research Center, via Anguillarese 301, 00123 Roma (Italy)
2014-01-05
Highlights: • CZTS films with different compositions were grown from stacked-layer precursors. • The band-gap energy varies from 1.48 to 1.63 eV as the [Sn]/[Cu] ratio increases. • The Zn content seems not to be a critical parameter for the optical properties. • PDS data show an increase of the sub-gap absorption as the Sn content is reduced. • Formation of defects at low Sn content was proposed to explain the Eg variation. -- Abstract: The considerable spread of Cu{sub 2}ZnSnS{sub 4} (CZTS) optical properties reported in the literature is discussed in terms of material stoichiometry. To this purpose, kesterite thin films were prepared by sulfurization of multilayered precursors of ZnS, Cu and Sn, changing the relative amounts to obtain CZTS layers with different compositions. X-Ray Diffraction (XRD), Energy Dispersive X-Ray (EDX) spectroscopy, X-Ray Photoelectron Spectroscopy (XPS) and Raman spectroscopy were used for structural and compositional analysis. XRD quantitative phase analysis provides the amount of spurious phases and information on Sn-site occupancy. The optical properties were investigated by spectrophotometric and Photothermal Deflection Spectroscopy (PDS) measurements to assess the absorption coefficient of samples with different compositions. The PDS data show an increase of the sub-band absorption as the Sn content decreases. The results are interpreted assuming the formation of additional defects as the tin content is reduced. Those defects can also be responsible for the decrease of the band gap energy value as the Sn/Cu ratio is decreased.
The band gap and band offset in ultrathin oxide-semiconductor heterostructures
Schmeißer, D.; Henkel, K.; Bergholz, M.; Tallarida, M.
2010-03-01
In ultrathin high- k oxide layers knowledge of the band line up and band gap is essential for modeling the transport properties and to learn about a device's long term stability and reliability. However, such data are hard to determine in such ultrathin layers and usually are extrapolated from values for bulk samples or are taken from the literature. In our in situ approach we use electron energy loss spectroscopy, valence band photoelectron spectroscopy, X-ray absorption spectroscopy, and resonant inelastic X-ray scattering to obtain the loss function and the valence and conduction band densities of states. From such data we derive the values of the band offsets and of the band gap. We discuss the ability of this combination of different techniques for the analysis of such complex ultrathin dielectric systems and discuss in detail the properties of the native oxide in SiO 2/Si(001) and SiO 2/3C-SiC(001).
Band gap tuning of nickelates for photovoltaic applications
Chang, Lei; Wang, Le; You, Lu; Zhou, Yang; Fang, Liang; Wang, Shiwei; Wang, Junling
2016-11-01
Hybrid perovskites have achieved tremendous success as a light absorber in solar cells during the past few years. However, the stability issue casts shadow on their practical applications. Perovskite oxides may offer an alternative. In this study, the metal-insulator transition in perovskite neodymium nickelates (NdNiO3) is systematically tuned by adjusting the oxygen partial pressure during film growth. Room temperature insulating films with different band gaps are obtained. Testing photovoltaic cells have been prepared by combining the nickelates with Nb-doped SrTiO3, and photovoltaic performance has been optimized. Our study offers a new route for designing novel photovoltaic materials.
Widely tunable band gaps of graphdiyne: an ab initio study.
Koo, Jahyun; Park, Minwoo; Hwang, Seunghyun; Huang, Bing; Jang, Byungryul; Kwon, Yongkyung; Lee, Hoonkyung
2014-05-21
Functionalization of graphdiyne, a two-dimensional atomic layer of sp-sp(2) hybrid carbon networks, was investigated through first-principles calculations. Hydrogen or halogen atoms preferentially adsorb on sp-bonded carbon atoms rather than on sp(2)-bonded carbon atoms, forming sp(2)- or sp(3)-hybridization. The energy band gap of graphdiyne is increased from ~0.5 eV to ~5.2 eV through the hydrogenation or halogenation. Unlike graphene, segregation of adsorbing atoms is energetically unfavourable. Our results show that hydrogenation or halogenation can be utilized for modifying the electronic properties of graphdiyne for applications to nano-electronics and -photonics.
Photonic band gap spectra in Octonacci metamaterial quasicrystals
Brandão, E. R.; Vasconcelos, M. S.; Albuquerque, E. L.; Fulco, U. L.
2017-02-01
In this work we study theoretically the photonic band gap spectra for a one-dimensional quasicrystal made up of SiO2 (layer A) and a metamaterial (layer B) organized following the Octonacci sequence, where its nth-stage Sn is given by the inflation rule Sn =Sn - 1Sn - 2Sn - 1 for n ≥ 3 , with initial conditions S1 = A and S2 = B . The metamaterial is characterized by a frequency dependent electric permittivity ε(ω) and magnetic permeability μ(ω) . The polariton dispersion relation is obtained analytically by employing a theoretical calculation based on a transfer-matrix approach. A quantitative analysis of the spectra is then discussed, stressing the distribution of the allowed photonic band widths for high generations of the Octonacci structure, which depict a self-similar scaling property behavior, with a power law depending on the common in-plane wavevector kx .
Photonic band gap enhancement in frequency-dependent dielectrics.
Toader, Ovidiu; John, Sajeev
2004-10-01
We illustrate a general technique for evaluating photonic band structures in periodic d -dimensional microstructures in which the dielectric constant epsilon (omega) exhibits rapid variations with frequency omega . This technique involves the evaluation of generalized electromagnetic dispersion surfaces omega ( k--> ,epsilon) in a (d+1) -dimensional space consisting of the physical d -dimensional space of wave vectors k--> and an additional dimension defined by the continuous, independent, variable epsilon . The physical band structure for the photonic crystal is obtained by evaluating the intersection of the generalized dispersion surfaces with the "cutting surface" defined by the function epsilon (omega) . We apply this method to evaluate the band structure of both two- and three-dimensional (3D) periodic microstructures. We consider metallic photonic crystals with free carriers described by a simple Drude conductivity and verify the occurrence of electromagnetic pass bands below the plasma frequency of the bulk metal. We also evaluate the shift of the photonic band structure caused by free carrier injection into semiconductor-based photonic crystals. We apply our method to two models in which epsilon (omega) describes a resonant radiation-matter interaction. In the first model, we consider the addition of independent, resonant oscillators to a photonic crystal with an otherwise frequency-independent dielectric constant. We demonstrate that for an inhomogeneously broadened distribution of resonators impregnated within an inverse opal structure, the full 3D photonic band gap (PBG) can be considerably enhanced. In the second model, we consider a coupled resonant oscillator mode in a photonic crystal. When this mode is an optical phonon, there can be a synergetic interplay between the polaritonic resonance and the geometrical scattering resonances of the structured dielectric, leading to PBG enhancement. A similar effect may arise when resonant atoms that are
Lamb wave band gaps in locally resonant phononic crystal strip waveguides
Energy Technology Data Exchange (ETDEWEB)
Yao, Yuanwei, E-mail: yaoyw@scut.edu.cn [Department of Physics, Guangdong University of Technology, Guangzhou 510006 (China); Wu, Fugen [Experiment and Educational Center, Guangdong University of Technology, Guangzhou 510006 (China); Zhang, Xin [Department of Physics, Guangdong University of Technology, Guangzhou 510006 (China); Hou, Zhilin [Department of Physics, South China University of Technology, Guangzhou 510640 (China)
2012-01-09
Using finite element method, we have made a theoretically study of the band structure of Lamb wave in a locally resonant phononic crystal strip waveguide with periodic soft rubber attached on the two sides of epoxy main plate. The numerical results show that the Lamb wave band gap based on local resonant mechanism can be opened up in the stub strip waveguides, and the width of the local resonant band gap is narrower than that based on the Bragg scattering mechanism. The results also show that the stub shape and width have influence on the frequency and width of the Lamb wave band gap. -- Highlights: ► The local resonant Lamb wave band gap can be opened up in a stub strip waveguides. ► The width of the local resonant band gap is narrower than that Bragg scattering band gap. ► The shape and width of the stub have strongly influence on the local resonant band gap.
Enlargement of Photonic Band Gaps and Physical Picture of Photonic Band Structures
Institute of Scientific and Technical Information of China (English)
ZHANG Yan; SHI Jun-Jie
2006-01-01
@@ Light propagation in a one-dimensional photonic crystal (PC), consisting of alternative slabs with refractive indices (layer thicknesses) n1 (a) and n2 (b), is investigated. An important optimal parameter matching condition,n1a ≈ n2b, is obtained for the largest photonic band gap (PBG). Moreover, we find that the exact analytical solutions for the electric/magnetic field eigenmodes at the band edges are standing waves with odd or even symmetry about the centre of each layer. The electric/magnetic field eigenfunctions at the top and bottom of the nth band have n and n - 1 nodes in one period of PC, respectively. The PBG arises from the symmetric differences of the field eigenfunctions at the band edges.
Graded band gap GaInNAs solar cells
Energy Technology Data Exchange (ETDEWEB)
Langer, F.; Perl, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex, Material Systems, University of Würzburg, Am Hubland, Würzburg D97074 (Germany); Höfling, S. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen Research Center for Complex, Material Systems, University of Würzburg, Am Hubland, Würzburg D97074 (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS (United Kingdom)
2015-06-08
Dilute nitride GaInN(Sb)As with a band gap (E{sub g}) of 1.0 eV is a promising material for the integration in next generation multijunction solar cells. We have investigated the effect of a compositionally graded GaInNAs absorber layer on the spectral response of a GaInNAs sub cell. We produced band gap gradings (ΔE{sub g}) of up to 39 meV across a 1 μm thick GaInNAs layer. Thereby, the external quantum efficiency—compared to reference cells—was increased due to the improved extraction of photo-generated carriers from 34.0% to 36.7% for the wavelength range from 900 nm to 1150 nm. However, this device figure improvement is accompanied by a small decrease in the open circuit voltage of about 20 mV and the shift of the absorption edge to shorter wavelengths.
Narrow band gap conjugated polymers for emergent optoelectronic technologies
Azoulay, Jason D.; Zhang, Benjamin A.; London, Alexander E.
2015-09-01
Conjugated organic molecules effectively produce and harvest visible light and find utility in a variety of emergent optoelectronic technologies. There is currently interest in expanding the scope of these materials to extend functionality into the infrared (IR) spectral regions and endow functionality relevant in emergent technologies. Developing an understanding of the interplay between chemical and electronic structure in these systems will require control of the frontier orbital energetics (separation, position, and alignment), ground state electronic configurations, interchain arrangements, solid-state properties, and many other molecular features with synthetic precision that has yet to be demonstrated. Bridgehead imine substituted 4H-cyclopenta[2,1-b:3,4-b']dithiophene (CPDT) structural units, in combination with strong acceptors with progressively delocalized π-systems, afford modular donor-acceptor copolymers with broad and long wavelength absorption that spans technologically relevant wavelength (λ) ranges from 0.7 < λ < 3.2 μm.1 Here we demonstrate that electronic and structural manipulation play a major role in influencing the energetics of these systems and ultimately controlling the band gap of the materials. These results bear implication in the development of very narrow band gap systems where precise control will be necessary for achieving desired properties such as interactions with longer wavelength light.
Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2
Waterhouse, G. I. N.
2013-10-10
Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO
Zhou, Changjiang; Sai, Yi; Chen, Jiujiu
2016-09-01
This paper theoretically investigates the band gaps of Lamb mode waves in two-dimensional magnetoelastic phononic crystal slabs by an applied external magnetostatic field. With the assumption of uniformly oriented magnetization, an equivalent piezomagnetic material model is used. The effects of magnetostatic field on phononic crystals are considered carefully in this model. The numerical results indicate that the width of the first band gap is significantly changed by applying the external magnetic field with different amplitude, and the ratio between the maximum and minimum gap widths reaches 228%. Further calculations demonstrate that the orientation of the magnetic field obviously affects the width and location of the first band gap. The contactless tunability of the proposed phononic crystal slabs shows many potential applications of vibration isolation in engineering.
Unfolding the band structure of non-crystalline photonic band gap materials.
Tsitrin, Samuel; Williamson, Eric Paul; Amoah, Timothy; Nahal, Geev; Chan, Ho Leung; Florescu, Marian; Man, Weining
2015-08-20
Non-crystalline photonic band gap (PBG) materials have received increasing attention, and sizeable PBGs have been reported in quasi-crystalline structures and, more recently, in disordered structures. Band structure calculations for periodic structures produce accurate dispersion relations, which determine group velocities, dispersion, density of states and iso-frequency surfaces, and are used to predict a wide-range of optical phenomena including light propagation, excited-state decay rates, temporal broadening or compression of ultrashort pulses and complex refraction phenomena. However, band calculations for non-periodic structures employ large super-cells of hundreds to thousands building blocks, and provide little useful information other than the PBG central frequency and width. Using stereolithography, we construct cm-scale disordered PBG materials and perform microwave transmission measurements, as well as finite-difference time-domain (FDTD) simulations. The photonic dispersion relations are reconstructed from the measured and simulated phase data. Our results demonstrate the existence of sizeable PBGs in these disordered structures and provide detailed information of the effective band diagrams, dispersion relation, iso-frequency contours, and their angular dependence. Slow light phenomena are also observed in these structures near gap frequencies. This study introduces a powerful tool to investigate photonic properties of non-crystalline structures and provides important effective dispersion information, otherwise difficult to obtain.
Large acoustic band gaps created by rotating square rods in two-dimensional periodic composites
Li Xiao Ling; Hu He Fei; Zhong Shao; Liu You Yan
2003-01-01
Effects of orientations of square rods on the acoustic band gaps in two-dimensional periodic arrays of rigid solid rods embedded in air are studied. The acoustic band gaps will be opened and enlarged greatly by increasing the rotation angle. For any filling fraction F, the maximum acoustic band gaps appear at the same rotation angle theta = 45 deg. for the cases of F<=0.50, otherwise they will appear at different limit values theta sub c and the largest band gap is achieved at a filling fraction of about F=0.85. This gap-tuning effect will be stronger with increase in filling fraction. This tuning mechanism of band gap suggests a new way to design band gaps of two-dimensional phononic crystals. (rapid communication)
Band-gap tunable dielectric elastomer filter for low frequency noise
Jia, Kun; Wang, Mian; Lu, Tongqing; Zhang, Jinhua; Wang, Tiejun
2016-05-01
In the last decades, diverse materials and technologies for sound insulation have been widely applied in engineering. However, suppressing the noise radiation at low frequency still remains a challenge. In this work, a novel membrane-type smart filter, consisting of a pre-stretched dielectric elastomer membrane with two compliant electrodes coated on the both sides, is presented to control the low frequency noise. Since the stiffness of membrane dominates its acoustic properties, sound transmission band-gap of the membrane filter can be tuned by adjusting the voltage applied to the membrane. The impedance tube experiments have been carried out to measure the sound transmission loss (STL) of the filters with different electrodes, membrane thickness and pre-stretch conditions. The experimental results show that the center frequency of sound transmission band-gap mainly depends on the stress in the dielectric elastomer, and a large band-gap shift (more than 60 Hz) can be achieved by tuning the voltage applied to the 85 mm diameter VHB4910 specimen with pre-stretch {λ }0=3. Based on the experimental results and the assumption that applied electric field is independent of the membrane behavior, 3D finite element analysis has also been conducted to calculate the membrane stress variation. The sound filter proposed herein may provide a promising facility to control low frequency noise source with tonal characteristics.
Modulation of the Band Gaps of Phononic Crystals with Thermal Effects
Aly, Arafa H.; Mehaney, Ahmed
2015-11-01
Band gaps of elastic waves, both in-plane and shear waves, propagating through one-dimensional perfect/defect phononic crystals (PnCs) that involve thermal effects are studied in this paper. Based on the transfer matrix method and Bloch theory, the expressions of the reflection coefficients and dispersion relation are presented. Elastic waves localization is obtained by immersing a defect layer through a perfect structure. Compared with the periodic structure, we observed that defected PnCs introduced localized modes or peaks within the phononic band gaps. Hence, Numerical simulations are performed to investigate the influences of the defect layer thickness and type on the number and intensity of the localized modes. Moreover, we have observed that temperature changes have prominent effects on the localized modes and band gaps width, especially at plane wave propagation. Such effects could change thermal properties of the PnCs structure such as thermal conductivity and could control the thermal emission contributed by phonons in many engineering structures.
II-VI wide band gap semiconductors under hydrostatic pressure
Baquero, R.; Decoss, R.; Olguin, D.
1993-08-01
We set an analytical expression for the gap as a function of hydrostatic deformation, E(sub g)(epsilon), by diagonalizing in Gamma the corresponding empirical tight-binding Hamiltonian (ETBH). In the ETBH we use the well known d(exp -2) Harrison scaling law (HSL) to adjust the TB parameter (TBP) to the changes in interatomic distances. We do not consider cation-anion charge transfer. We calculate E(sub g)(epsilon) for wide band gap II-VI semiconductors with zincblende crystal structure for deformations under pressure up to -5 percent. Results are in good agreement with experiment for the compounds of lower ionicity but deviate as the ionicity of the compound increases. This is due to the neglect of charge transfer which should be included self-consistently. Within the approximation we always find a positive second derivative of E(sub g)(epsilon) with respect to epsilon, independent of the material. Furthermore, the inclusion of deviations from HSL appear to be unimportant to this problem.
Sandeep; D, P. Rai; A, Shankar; M, P. Ghimire; Anup Pradhan, Sakhya; T, P. Sinha; R, Khenata; S, Bin Omran; R, K. Thapa
2016-06-01
The structural, electronic, and magnetic properties of the Nd-doped Rare earth aluminate, La1-x Nd x AlO3 (x = 0% to 100%) alloys are studied using the full potential linearized augmented plane wave (FP-LAPW) method within the density functional theory. The effects of the Nd substitution in LaAlO3 are studied using the supercell calculations. The computed electronic structure with the modified Becke-Johnson (mBJ) potential based approximation indicates that the La1-x Nd x AlO3 alloys may possess half-metallic (HM) behaviors when doped with Nd of a finite density of states at the Fermi level (E F). The direct and indirect band gaps are studied each as a function of x which is the concentration of Nd-doped LaAlO3. The calculated magnetic moments in the La1-x Nd x AlO3 alloys are found to arise mainly from the Nd-4f state. A probable half-metallic nature is suggested for each of these systems with supportive integral magnetic moments and highly spin-polarized electronic structures in these doped systems at E F. The observed decrease of the band gap with the increase in the concentration of Nd doping in LaAlO3 is a suitable technique for harnessing useful spintronic and magnetic devices. Project supported by the DST-SERB, Dy (Grant No. SERB/3586/2013-14), the UGCBSR, FRPS (Grant No. F.30-52/2014), the UGC (New Delhi, India) Inspire Fellowship DST (India), and the Deanship of Scientific Research at King Saud University (Grant No. RPG-VPP-088). M P Ghimire thanks the Alexander von Humboldt Foundation, Germany for the financial support.
Modeling of Photonic Band Gap Crystals and Applications
Energy Technology Data Exchange (ETDEWEB)
El-Kady, Ihab Fathy [Iowa State Univ., Ames, IA (United States)
2002-01-01
In this work, the authors have undertaken a theoretical approach to the complex problem of modeling the flow of electromagnetic waves in photonic crystals. The focus is to address the feasibility of using the exciting phenomena of photonic gaps (PBG) in actual applications. The authors start by providing analytical derivations of the computational electromagnetic methods used in their work. They also present a detailed explanation of the physics underlying each approach, as well as a comparative study of the strengths and weaknesses of each method. The Plane Wave expansion, Transfer Matrix, and Finite Difference time Domain Methods are addressed. They also introduce a new theoretical approach, the Modal Expansion Method. They then shift the attention to actual applications. They begin with a discussion of 2D photonic crystal wave guides. The structure addressed consists of a 2D hexagonal structure of air cylinders in a layered dielectric background. Comparison with the performance of a conventional guide is made, as well as suggestions for enhancing it. The studies provide an upper theoretical limit on the performance of such guides, as they assumed no crystal imperfections and non-absorbing media. Next, they study 3D metallic PBG materials at near infrared and optical wavelengths. The main objective is to study the importance of absorption in the metal and the suitability of observing photonic band gaps in such structures. They study simple cubic structures where the metallic scatters are either cubes or interconnected metallic rods. Several metals are studied (aluminum, gold, copper, and silver). The effect of topology is addressed and isolated metallic cubes are found to be less lossy than the connected rod structures. The results reveal that the best performance is obtained by choosing metals with a large negative real part of the dielectric function, together with a relatively small imaginary part. Finally, they point out a new direction in photonic crystal
Nonideal anion displacement, band gap variation, and valence band splitting in Cu-In-Se compounds
Energy Technology Data Exchange (ETDEWEB)
Reena Philip, Rachel [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi-682022 Kerala (India)]. E-mail: reenatara@cusat.ac.in; Pradeep, B. [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi-682022 Kerala (India)
2005-01-24
Polycrystalline thin films of ternary chalcopyrite CuInSe{sub 2} and defect compounds CuIn{sub 3}Se{sub 5} and CuIn{sub 5}Se{sub 8} are prepared in vacuum by three-source coevaporation method. Structural and optical characterizations of the films are done using X-ray diffraction (XRD), energy-dispersive X-ray analysis (EDAX), and optical absorbance spectra measurements. With variation in the composition of CuInSe{sub 2}, a change over from p-type to n-type conductivity is observed (as noted by the hot probe method). The deformation parameters and the anion displacements are calculated from the X-ray diffraction data, and the cation-anion bond lengths are deduced. The dependence of band gap variation on nonideal anion displacement in the ternary compounds and the effect of Se-p-Cu-d repulsion on band gap are studied. The threefold optical structure observed in the fundamental absorption region of the absorption spectra is analysed to extract the valence band splitting parameters. Hopfields quasi-cubic model adapted for chalcopyrites with tetragonal deformation is used to determine the crystal field splittings and spin orbit splittings, and the linear hybridization model is used to calculate the percentage of d-orbital and p-orbital contribution to hybridization in the compounds under consideration.
Lewis acid adducts of narrow band gap conjugated polymers.
Welch, Gregory C; Bazan, Guillermo C
2011-03-30
We report on the interaction of Lewis acids with narrow band gap conjugated copolymers containing donor and acceptor units. Examination of the widely used poly[(4,4-bis(2-ethylhexyl)cyclopenta-[2,1-b:3,4-b']dithiophene)-2,6-(diyl-alt-benzo[2,1,3]thiadiazole)-4,7-diyl] (1) shows weaker binding with B(C(6)F(5))(3) when compared with a small molecule that contains a cyclopenta-[2,1-b:3,4-b']dithiophene (CDT) unit flanked by two benzo[2,1,3]thiadiazole (BT) fragments. Studies on model compounds representative of 1, together with a comparison between B(C(6)F(5))(3) and BBr(3), indicate that the propensity for Lewis acid coordination is decreased because of steric encumbrance surrounding the BT nitrogen sites. These observations led to the design of chromophores that incorporate an acceptor unit with a more basic nitrogen site, namely pyridal[2,1,3]thiadiazole (PT). That this strategy leads to a stronger B-N interaction was demonstrated through the examination of the reaction of B(C(6)F(5))(3) with two small molecules bis(4,4-bis(hexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-4,7-pyridal[2,1,3]thiadiazole (8) and bis{2-thienyl-(4,4-bis(hexyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)}-4,7-pyridal[2,1,3]thiadiazole (9) and two polymer systems (poly[(4,4-bis(2-ethylhexyl)cyclopenta-[2,1-b:3,4-b']dithiophene)-2,6-diyl-alt-([1,2,5]thiadiazolo[3,4-c]pyridine)-4,7-diyl] (10) and poly[(4,4-bis(2-ethylhexyl)cyclopenta-[2,1-b:3,4-b']dithiophene)-2,6-diyl-alt-(4',7'-bis(2-thienyl)-[1,2,5]thiadiazolo[3,4-c]pyridine)-5,5-diyl] (11). From a materials perspective, it is worth pointing out that through the binding of B(C(6)F(5))(3), new NIR-absorbing polymers can be generated with band gaps from 1.31 to 0.89 eV. A combination of studies involving ultraviolet photoemission spectroscopy and density functional theory shows that the narrowing of the band gap upon borane coordination to the pyridal nitrogen on PT is a result of lowering the energies of both the highest occupied molecular
Significant band-gap opening in graphene and Pd-doped graphene via the adsorption of ionized methane
Wang, Su-Fang; Chen, Li-Yong; Zhang, Jian-Min
2017-04-01
First-principles calculations are performed to study the adsorptions of ionized methane (i.e., CHn+ (n = 3,4) fragments) on pristine graphene (G-CHn+) and Pd-doped graphene (G/Pd-CHn+). Remarkably, CH3+ adsorption induces significant band-gap for both systems, while it is absent in the cases of both CH4+ and CH3 adsorptions. The charge-induced gaps are found to be about 665 meV and 401 meV for G-CH3+ and G/Pd-CH3+ systems, respectively. Promisingly, the Pd-doped graphene with CH3+ adsorption not only achieves a significant band-gap at Dirac point, but also retains nearly linear dispersion near the Fermi level. Both hole effect and localized electron hybridization mediate the band-gap opening. Within DFT + U scheme, coulomb-correction dependences of band-gap, Fermi velocity and effective mass of carriers are handled for the Pd-doped graphene with CH3+ adsorption. These results may be interesting for exploring the applications of graphene in band-gap engineering and gaseous ionization detectors.
Optical Properties of One-dimensional Three-component Photonic Band Gap Structure
Institute of Scientific and Technical Information of China (English)
无
2003-01-01
Theoretical study of the optical properties of one-dimensional three-component photonic band gap structure, which is composed of three alternating dielectric layers of different refractive indices and thickness in a unit cell, is performed. This one-dimensional photonic band gap structure exhibits the transparency band and forbidden band. We find that there are several mini-bands of the allowed transmission to be created within the photonic band gap region of the structure if a defect designed specially is introduced inside the structure. This characteristic is very important for some practical applications.
Ultra-wide acoustic band gaps in pillar-based phononic crystal strips
Energy Technology Data Exchange (ETDEWEB)
Coffy, Etienne, E-mail: etienne.coffy@femto-st.fr; Lavergne, Thomas; Addouche, Mahmoud; Euphrasie, Sébastien; Vairac, Pascal; Khelif, Abdelkrim [FEMTO-ST Institute, Université de Franche-Comté, UBFC, CNRS, ENSMM, UTBM, 15B Av. des Montboucons, F-25030 Besançon (France)
2015-12-07
An original approach for designing a one dimensional phononic crystal strip with an ultra-wide band gap is presented. The strip consists of periodic pillars erected on a tailored beam, enabling the generation of a band gap that is due to both Bragg scattering and local resonances. The optimized combination of both effects results in the lowering and the widening of the main band gap, ultimately leading to a gap-to-midgap ratio of 138%. The design method used to improve the band gap width is based on the flattening of phononic bands and relies on the study of the modal energy distribution within the unit cell. The computed transmission through a finite number of periods corroborates the dispersion diagram. The strong attenuation, in excess of 150 dB for only five periods, highlights the interest of such ultra-wide band gap phononic crystal strips.
Research on the elastic wave band gaps of curved beam of phononic crystals
Energy Technology Data Exchange (ETDEWEB)
Shaogang, Liu; Shidan, Li; Haisheng, Shu, E-mail: shuhaisheng@hrbeu.edu.cn; Weiyuan, Wang; Dongyan, Shi; Liqiang, Dong; Hang, Lin; Wei, Liu
2015-01-15
Based on wave equations of Timoshenko curved beam, the theoretical derivation and numerical calculation of the behavior of in-plane and out-of-plane wave propagating in curved beam of phononic crystals (CBPC) are carried out using transfer matrix method combined with the Bloch theorem. Finite CBPC is also simulated by FEM method. It is shown that both in-plane and out-of-plane elastic waves band gaps exist in CBPC. Compared with equivalent straight beam of phononic crystals (SBPC), CBPC has some unique characteristics, such as the first complete in-plane band gap, special in-plane coupling band gap, and out-of-plane coupling band gap. In those band gaps, CBPC has a better property of vibration reduction than the equivalent SBPC in some ways. Furthermore, effects of curvature of CBPC on the in-plane and out-of-plane band gaps are discussed.
Reduction of Refractive Index Contrast Threshold for Photonic Band-Gap in Square Lattices
Institute of Scientific and Technical Information of China (English)
WANG Jian-Feng; HUANG Yi-Dong; ZHANG Wei; PENG Jiang-De
2005-01-01
@@ The threshold of refractive index contrast (RIC) to open a photonic band gap can be reduced by symmetry breaking. For the case of square lattice composed by dielectric cylinders, the absolute band gap is demonstrated by inserting small rods in the centre of the lattices, and the threshold RIC is reduced to 3.8. As for the square lattices composed by air holes in dielectric, the minimal RIC required for an absolute band gap decreases to 2.20.
Ultrafast Band Engineering and Transient Spin Currents in Antiferromagnetic Oxides.
Gu, Mingqiang; Rondinelli, James M
2016-04-29
We report a dynamic structure and band engineering strategy with experimental protocols to induce indirect-to-direct band gap transitions and coherently oscillating pure spin-currents in three-dimensional antiferromagnets (AFM) using selective phononic excitations. In the Mott insulator LaTiO3, we show that a photo-induced nonequilibrium phonon mode amplitude destroys the spin and orbitally degenerate ground state, reduces the band gap by 160 meV and renormalizes the carrier masses. The time scale of this process is a few hundreds of femtoseconds. Then in the hole-doped correlated metallic titanate, we show how pure spin-currents can be achieved to yield spin-polarizations exceeding those observed in classic semiconductors. Last, we demonstrate the generality of the approach by applying it to the non-orbitally degenerate AFM CaMnO3. These results advance our understanding of electron-lattice interactions in structures out-of-equilibrium and establish a rational framework for designing dynamic phases that may be exploited in ultrafast optoelectronic and optospintronic devices.
Two-dimensional silica: Structural, mechanical properties, and strain-induced band gap tuning
Energy Technology Data Exchange (ETDEWEB)
Gao, Enlai; Xie, Bo [Applied Mechanics Laboratory, Department of Engineering Mechanics, and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084 (China); Xu, Zhiping, E-mail: xuzp@tsinghua.edu.cn [Applied Mechanics Laboratory, Department of Engineering Mechanics, and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084 (China); State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)
2016-01-07
Two-dimensional silica is of rising interests not only for its practical applications as insulating layers in nanoelectronics, but also as a model material to understand crystals and glasses. In this study, we examine structural and electronic properties of hexagonal and haeckelite phases of silica bilayers by performing first-principles calculations. We find that the corner-sharing SiO{sub 4} tetrahedrons in these two phases are locally similar. The robustness and resilience of these tetrahedrons under mechanical perturbation allow effective strain engineering of the electronic structures with band gaps covering a very wide range, from of that for insulators, to wide-, and even narrow-gap semiconductors. These findings suggest that the flexible 2D silica holds great promises in developing nanoelectronic devices with strain-tunable performance, and lay the ground for the understanding of crystalline and vitreous phases in 2D, where bilayer silica provides an ideal test-bed.
Institute of Scientific and Technical Information of China (English)
Jie Zha; Zhi-Yong Zhong; Huai-Wu Zhang; Qi-Ye Wen; Yuan-Xun Li
2009-01-01
Band gap characteristics of the photonic crystals in terahertz range with square lattice and triangular lattice of GaAs cylinders are comparatively studied by means of plane wave method (PWM). The influence of the radius on the band gap width is analyzed and the critical values where the band gap appears are put forward. The results show that themaximum band gap width of photonic crystal with triangular lattice of GaAs cylinders is much wider than that of photonic crystal with square lattice. The research provides a theoretic basis for the development of terahertz (THz) devices.
Urbach's rule derived from thermal fluctuations in the band-gap energy
DEFF Research Database (Denmark)
Skettrup, Torben
1978-01-01
The exponential absorption edge (known as Urbach's rule) observed in most materials is interpreted in terms of thermal fluctuations in the band-gap energy. The main contribution to the temperature shift of the band-gap energy is due to the temperature-dependent self-energies of the electrons...... and holes interacting with the phonons. Since the phonon number is fluctuating in thermal equilibrium, the band-gap energy is also fluctuating resulting in an exponential absorption tail below the average band-gap energy. These simple considerations are applied to derive Urbach's rule at high temperatures...
Low Band Gap Polymers for Roll-to-Roll Coated Polymer Solar Cells
DEFF Research Database (Denmark)
2010-01-01
We present the synthesis of a low band gap copolymer based on dithienothiophene and dialkoxybenzothiadiazole (poly(dithienothiophene-co-dialkoxybenzothiadiazole), PDTTDABT). The optical properties of the polymer showed a band gap of 1.6 eV and a sky-blue color in solid films. The polymer was expl......We present the synthesis of a low band gap copolymer based on dithienothiophene and dialkoxybenzothiadiazole (poly(dithienothiophene-co-dialkoxybenzothiadiazole), PDTTDABT). The optical properties of the polymer showed a band gap of 1.6 eV and a sky-blue color in solid films. The polymer...
The pGAPS experiment: an engineering balloon flight of prototype GAPS
Fuke, Hideyuki; Aramaki, Tsuguo; Bando, Nobutaka; Boggs, Steven E; Doetinchem, Philip v; Gahbauer, Florian H; Hailey, Charles J; Koglin, Jason E; Madden, Norm; Mognet, Samuel Adam I; Mori, Kaya; Okazaki, Shun; Perez, Kerstin M; Yoshida, Tetsuya; Zweerink, Jeffrey
2013-01-01
The General Anti-Particle Spectrometer (GAPS) project is being carried out to search for primary cosmic-ray antiparticles especially for antideuterons produced by cold dark matter. GAPS plans to realize the science observation by Antarctic long duration balloon flights in late 2010's. In preparation for the Antarctic science flights, an engineering balloon flight using a prototype of the GAPS instrument, "pGAPS", was successfully carried out in June 2012 in Japan to verify the basic performance of each GAPS subsystem. The outline of the pGAPS flight campaign is briefly reported.
Photonic-Band-Gap Traveling-Wave Gyrotron Amplifier
Nanni, E. A.; Lewis, S. M.; Shapiro, M. A.; Griffin, R. G.; Temkin, R. J.
2014-01-01
We report the experimental demonstration of a gyrotron traveling-wave-tube amplifier at 250 GHz that uses a photonic band gap (PBG) interaction circuit. The gyrotron amplifier achieved a peak small signal gain of 38 dB and 45 W output power at 247.7 GHz with an instantaneous −3 dB bandwidth of 0.4 GHz. The amplifier can be tuned for operation from 245–256 GHz. The widest instantaneous −3 dB bandwidth of 4.5 GHz centered at 253.25 GHz was observed with a gain of 24 dB. The PBG circuit provides stability from oscillations by supporting the propagation of transverse electric (TE) modes in a narrow range of frequencies, allowing for the confinement of the operating TE03-like mode while rejecting the excitation of oscillations at nearby frequencies. This experiment achieved the highest frequency of operation for a gyrotron amplifier; at present, there are no other amplifiers in this frequency range that are capable of producing either high gain or high output power. This result represents the highest gain observed above 94 GHz and the highest output power achieved above 140 GHz by any conventional-voltage vacuum electron device based amplifier. PMID:24476286
Pattern reconfigurable antenna using electromagnetic band gap structure
Ismail, M. F.; Rahim, M. K. A.; Majid, H. A.; Hamid, M. R.; Yusoff, M. F. M.; Dewan, R.
2017-01-01
In this paper, a single rectangular patch antenna incorporated with an array of electromagnetic band gap (EBG) structures is proposed. The proposed antenna features radiation pattern agility by means of connecting the shorting pin vias to the EBG unit cells. The proposed design consists of 32 mm × 35.5 mm rectangular patch antenna and 10.4-mm-square mushroom-like EBG unit cells. The EBGs are placed at both sides of the antenna radiating patch and located on the thicker substrate of thickness, h. The copper tape which represents the PIN diode is used to control the connection between the EBG's via and the ground plane as reconfigurable mechanism of the antenna. The simulated result shows by switching the ON and OFF EBG structures in either sides or both, the directional radiation pattern can be tilted from 0 to +14°. The proposed antenna exhibits 7.2 dB realized gain at 2.42 GHz. The parametric study on EBG and antenna is also discussed.
Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence.
Carnevale, Santino D; Kent, Thomas F; Phillips, Patrick J; Mills, Michael J; Rajan, Siddharth; Myers, Roberto C
2012-02-08
Almost all electronic devices utilize a pn junction formed by random doping of donor and acceptor impurity atoms. We developed a fundamentally new type of pn junction not formed by impurity-doping, but rather by grading the composition of a semiconductor nanowire resulting in alternating p and n conducting regions due to polarization charge. By linearly grading AlGaN nanowires from 0% to 100% and back to 0% Al, we show the formation of a polarization-induced pn junction even in the absence of any impurity doping. Since electrons and holes are injected from AlN barriers into quantum disk active regions, graded nanowires allow deep ultraviolet LEDs across the AlGaN band-gap range with electroluminescence observed from 3.4 to 5 eV. Polarization-induced p-type conductivity in nanowires is shown to be possible even without supplemental acceptor doping, demonstrating the advantage of polarization engineering in nanowires compared with planar films and providing a strategy for improving conductivity in wide-band-gap semiconductors. As polarization charge is uniform within each unit cell, polarization-induced conductivity without impurity doping provides a solution to the problem of conductivity uniformity in nanowires and nanoelectronics and opens a new field of polarization engineering in nanostructures that may be applied to other polar semiconductors.
Controllable Synthesis of Band Gap-Tunable and Monolayer Transition Metal Dichalcogenide Alloys
Directory of Open Access Journals (Sweden)
Sheng-Han eSu
2014-07-01
Full Text Available The electronic and optical properties of transition metal dichalcogenide (TMD materials are directly governed by their energy gap; thus, the band gap engineering has become an important topic recently. Theoretical and some experimental results have indicated that these monolayer TMD alloys exhibit direct-gap properties and remain stable at room temperature, making them attractive for optoelectronic applications. Here we systematically compared the two approaches of forming MoS2xSe2(1-x monolayer alloys: selenization of MoS2 and sulfurization of MoSe2. The optical energy gap of as-grown CVD MoS2 can be continuously modulated from 1.86 eV (667 nm to 1.57 eV (790 nm controllable by the reaction temperature. Spectroscopic and microscopic evidences show that the Mo-S bonds can be replaced by the Mo-Se bonds in a random and homogeneous manner. By contrast, the replacement of Mo-Se by Mo-S does not randomly occur in the MoSe2 lattice, where the reaction preferentially occurs along the crystalline orientation of MoSe2 and thus the MoSe2/MoS2 biphases are easily observed in the alloys, which makes the optical band gap of these alloys distinctly different. Therefore, the selenization of metal disulfide is preferred and the proposed synthetic strategy opens up a simple route to control the atomic structure as well as optical properties of monolayer TMD alloys.
Pathway to Oxide Photovoltaics via Band-Structure Engineering of SnO
Energy Technology Data Exchange (ETDEWEB)
Peng, Haowei; Bikowski, Andre; Zakutayev, Andriy; Lany, Stephan
2016-10-01
All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical properties were developed. SnO has exceptional doping and transport properties among oxides, but suffers from a strongly indirect band gap. Here, we address this shortcoming by band-structure engineering through isovalent but heterostructural alloying with divalent cations (Mg, Ca, Sr, and Zn). Using first-principles calculations, we show that suitable band gaps and optical properties close to that of direct semiconductors are achievable, while the comparatively small effective masses are preserved in the alloys. Initial thin film synthesis and characterization support the feasibility of the approach.
Narrow Band Gap Lead Sulfide Hole Transport Layers for Quantum Dot Photovoltaics.
Zhang, Nanlin; Neo, Darren C J; Tazawa, Yujiro; Li, Xiuting; Assender, Hazel E; Compton, Richard G; Watt, Andrew A R
2016-08-24
The band structure of colloidal quantum dot (CQD) bilayer heterojunction solar cells is optimized using a combination of ligand modification and QD band gap control. Solar cells with power conversion efficiencies of up to 9.33 ± 0.50% are demonstrated by aligning the absorber and hole transport layers (HTL). Key to achieving high efficiencies is optimizing the relative position of both the valence band and Fermi energy at the CQD bilayer interface. By comparing different band gap CQDs with different ligands, we find that a smaller band gap CQD HTL in combination with a more p-type-inducing CQD ligand is found to enhance hole extraction and hence device performance. We postulate that the efficiency improvements observed are largely due to the synergistic effects of narrower band gap QDs, causing an upshift of valence band position due to 1,2-ethanedithiol (EDT) ligands and a lowering of the Fermi level due to oxidation.
High-power picosecond pulse delivery through hollow core photonic band gap fibers
DEFF Research Database (Denmark)
Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian;
2015-01-01
We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers......We demonstrated robust and bend insensitive fiber delivery of high power pulsed laser with diffraction limited beam quality for two different kind of hollow core photonic band gap fibers...
Alatas, Husin; Sumaryada, Tony I.; Ahmad, Faozan
2015-01-01
We have investigated the characteristics of local density of optical states (LDOS) at photonic band gap resonant wavelength of an asymmetric waveguide grating based on Green's function formulation. It is found that the LDOS of the considered structure exhibits different characteristics in its localization between the upper and lower resonant wavelengths of the corresponding photonic band gap edges.
True photonic band-gap mode-control in VCSEL structures
DEFF Research Database (Denmark)
Romstad, F.; Madsen, M.; Birkedal, Dan;
2003-01-01
Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....
Gorelik, V. S.; Voinov, Yu. P.; Shchavlev, V. V.; Bi, Dongxue; Shang, Guo Liang; Fei, Guang Tao
2016-12-01
Mesoporous one-dimensional photonic crystals based on aluminum oxide have been synthesized by electrochemical etching method. Reflection spectra of the obtained mesoporous samples in a wide spectral range that covers several band gaps are presented. Microscopic parameters of photonic crystals are calculated and corresponding reflection spectra for the first six band gaps are presented.
Maximizing phononic band gaps in piezocomposite materials by means of topology optimization.
Vatanabe, Sandro L; Paulino, Glaucio H; Silva, Emílio C N
2014-08-01
Phononic crystals (PCs) can exhibit phononic band gaps within which sound and vibrations at certain frequencies do not propagate. In fact, PCs with large band gaps are of great interest for many applications, such as transducers, elastic/acoustic filters, noise control, and vibration shields. Previous work in the field concentrated on PCs made of elastic isotropic materials; however, band gaps can be enlarged by using non-isotropic materials, such as piezoelectric materials. Because the main property of PCs is the presence of band gaps, one possible way to design microstructures that have a desired band gap is through topology optimization. Thus in this work, the main objective is to maximize the width of absolute elastic wave band gaps in piezocomposite materials designed by means of topology optimization. For band gap calculation, the finite element analysis is implemented with Bloch-Floquet theory to solve the dynamic behavior of two-dimensional piezocomposite unit cells. Higher order frequency branches are investigated. The results demonstrate that tunable phononic band gaps in piezocomposite materials can be designed by means of the present methodology.
Theoretical study of relative width of photonic band gap for the 3-D dielectric structure
Indian Academy of Sciences (India)
G K Johri; Akhilesh Tiwari; Saumya Saxena; Rajesh Sharma; Kuldeep Srivastava; Manoj Johri
2002-03-01
Calculations for the relative width (/0) as a function of refractive index and relative radius of the photonic band gap for the fcc closed packed 3-D dielectric microstructure are reported and comparison of experimental observations and theoretical predictions are given. This work is useful for the understanding of photonic crystals and occurrence of the photonic band gap.
Simultaneous existence of phononic and photonic band gaps in periodic crystal slabs.
Pennec, Y; Djafari Rouhani, B; El Boudouti, E H; Li, C; El Hassouani, Y; Vasseur, J O; Papanikolaou, N; Benchabane, S; Laude, V; Martinez, A
2010-06-21
We discuss the simultaneous existence of phononic and photonic band gaps in a periodic array of holes drilled in a Si membrane. We investigate in detail both the centered square lattice and the boron nitride (BN) lattice with two atoms per unit cell which include the simple square, triangular and honeycomb lattices as particular cases. We show that complete phononic and photonic band gaps can be obtained from the honeycomb lattice as well as BN lattices close to honeycomb. Otherwise, all investigated structures present the possibility of a complete phononic gap together with a photonic band gap of a given symmetry, odd or even, depending on the geometrical parameters.
Demming, Anna
2013-08-01
A little stress or strain has been known to improve the performance of athletes, actors and of course nanomaterials alike. In fact strain in silicon is now a major engineering tool for improving the performance of devices, and is ubiquitously used in device design and fabrication. Strain engineering alters a material's band structure, a model of electron behaviour that describes how as atoms come together in a solid, their discrete electron orbitals overlap to ultimately give rise to bands of allowed energy levels. In a strained crystal lattice of silicon or silicon germanium the distance between atoms in the lattice is greater than usual and the bands of allowed energy levels change. This July marks 100 years since Bohr submitted his paper 'On the constitution of atoms and molecules' [1] where he describes the structure of the atom in terms of discrete allowed energy levels. The paper was a seminal contribution to the development of quantum mechanics and laid the initial theoretical precepts for band gap engineering in devices. In this issue Nrauda and a collaboration of researchers in Europe and Australia study the growth of defect-free SiGe islands on pre-patterned silicon [2]. They analyse the strain in the islands and determine at what point lattice dislocations set in with a view to informing implementation of strain engineering in devices. The effects of strain on band structure in silicon and germanium were already studied and reported in the 1950s [3, 4]. Since then the increasing focus on nanoscale materials and the hunger for control of electronic properties has prompted further study of strain effects. The increased surface area to volume ratio in nanostructures changes the strain behaviour with respect to bulk materials, and this can also be exploited for handling and fine tuning strain to manipulate material properties. It is perhaps no surprise that graphene, one of the most high-profile materials in current nanotechnology research, has attracted
Understanding Band Gaps of Solids in Generalized Kohn-Sham Theory
Perdew, John P; Burke, Kieron; Yang, Zenghui; Gross, Eberhard K U; Scheffler, Matthias; Scuseria, Gustavo E; Henderson, Thomas M; Zhang, Igor Ying; Ruzsinszky, Adrienn; Peng, Haowei; Sun, Jianwei
2016-01-01
The fundamental energy gap of a periodic solid distinguishes insulators from metals and characterizes low-energy single-electron excitations. But the gap in the band-structure of the exact multiplicative Kohn-Sham (KS) potential substantially underestimates the fundamental gap, a major limitation of KS density functional theory. Here we give a simple proof of a new theorem: In generalized KS theory (GKS), the band gap equals the fundamental gap for the approximate functional if the GKS potential operator is continuous and the density change is delocalized when an electron or hole is added. Our theorem explains how GKS band gaps from meta-generalized gradient approximations (meta-GGAs) and hybrid functionals can be more realistic than those from GGAs or even from the exact KS potential, It also follows from earlier work. The band edges in the GKS one-electron spectrum are also related to measurable energies. A linear chain of hydrogen molecules provides a numerical illustration.
Grain size dependent optical band gap of CdI2 films
Indian Academy of Sciences (India)
Pankaj Tyagi; A G Vedeshwar
2001-06-01
The thermally evaporated stoichiometric CdI2 films show good -axis alignment normal to substrate plane for film thickness up to 200 nm. The optical absorption data indicate an allowed direct interband transition across a gap of 3.6 eV in confirmation with earlier band structure calculations. However, part of the absorption data near band edge can be fitted to an indirect band gap of 3 eV. The dependence of band gap on film thickness (> 200 nm) can be explained qualitatively in terms of decreasing grain boundary barrier height with grain size.
Institute of Scientific and Technical Information of China (English)
Zhanshan Wang; Tian Sang; Fengli Wang; Yonggang Wu; Lingyan Chen
2008-01-01
Band structures of one-dimensional(1D)photonic crystals(PCs)containing dispersive left-handed metamaterials are studied theoretically.The results show that the structure possesses a type of photonic band gap originating from total internal reflection(TIR).In contrast to photonic band gaps corresponding to zero average refractive index and zero phase.the TIR gap exhibits sharp angular effect and has no polarization effect.It should also be noted that band structures of transverse electric(TE) and transverse magnetic(TM) mode waves are exactly the same in the PCs we studied.
Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures
Energy Technology Data Exchange (ETDEWEB)
Jandieri, K., E-mail: kakhaber.jandieri@physik.uni-marburg.de; Ludewig, P.; Wegele, T.; Beyer, A.; Kunert, B.; Springer, P.; Baranovskii, S. D.; Koch, S. W.; Volz, K.; Stolz, W. [Materials Science Center and Faculty of Physics, Philipps-University Marburg, Marburg (Germany)
2015-08-14
We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP- or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.
Band Gap Narrowing and Widening of ZnO Nanostructures and Doped Materials.
Kamarulzaman, Norlida; Kasim, Muhd Firdaus; Rusdi, Roshidah
2015-12-01
Band gap change in doped ZnO is an observed phenomenon that is very interesting from the fundamental point of view. This work is focused on the preparation of pure and single phase nanostructured ZnO and Cu as well as Mn-doped ZnO for the purpose of understanding the mechanisms of band gap narrowing in the materials. ZnO, Zn0.99Cu0.01O and Zn0.99Mn0.01O materials were prepared using a wet chemistry method, and X-ray diffraction (XRD) results showed that all samples were pure and single phase. UV-visible spectroscopy showed that materials in the nanostructured state exhibit band gap widening with respect to their micron state while for the doped compounds exhibited band gap narrowing both in the nano and micron states with respect to the pure ZnO materials. The degree of band gap change was dependent on the doped elements and crystallite size. X-ray photoelectron spectroscopy (XPS) revealed that there were shifts in the valence bands. From both UV-visible and XPS spectroscopy, it was found that the mechanism for band gap narrowing was due to the shifting of the valance band maximum and conduction band minimum of the materials. The mechanisms were different for different samples depending on the type of dopant and dimensional length scales of the crystallites.
Silicon-based chalcogenide: Unexpected quantum spin Hall insulator with sizable band gap
Zhang, Run-wu; Zhang, Chang-wen; Ji, Wei-xiao; Li, Ping; Wang, Pei-ji; Li, Sheng-shi; Yan, Shi-shen
2016-10-01
Searching for two-dimensional (2D) silicon-based topological materials is imperative for the development of various innovative devices. Here, by using first-principles calculations, we discover the silicon-based chalcogenide Si2Te2 film to be a 2D quantum spin Hall (QSH) insulator with a fundamental band gap of 0.34 eV, which can be tunable under external strain. This nontrivial topological phase stems from band inversion between the Si-px,y and Te-px,y orbitals, demonstrated by a single pair of topologically protected helical edge states with Dirac point located in the bulk gap. Notably, the characteristic properties of edge states, such as the Fermi velocity and edge shape, can be engineered by edge modifications. Additionally, the BN sheet is an ideal substrate for the experimental realization of Si2Te2 films, without destroying its nontrivial topology. Our works open a meaningful route for designing topological spintronics devices based on 2D silicon-based films.
Energy Technology Data Exchange (ETDEWEB)
Malashchonak, M.V., E-mail: che.malasche@gmail.com [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A., E-mail: streltea@bsu.by [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Mazanik, A.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Poznyak, S.K. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Stroyuk, O.L., E-mail: stroyuk@inphyschem-nas.kiev.ua [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Kuchmiy, S.Ya. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 prosp. Nauky, 03028 Kyiv (Ukraine); Gaiduk, P.I. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus)
2015-08-31
Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 ± 10 m{sup 2}g{sup −1}) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y{sub max} = 90%; 0.1 M Na{sub 2}S + 0.1 M Na{sub 2}SO{sub 3}), but also in the sub-band-gap (SBG) range (Y{sub max} = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100 mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E{sub U}) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E{sub U} = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E{sub U} = 73 mV at N = 10) and remains steady in the range of N from 20 to 300 (E{sub U} = 67 ± 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. - Highlights: • ZnO/CdS films demonstrate high quantum efficiency (25%) for sub-band-gap transitions. • Onset photocurrent potentials for sub-band-gap processes differ than those for band-gap ones. • Sub-band-gap transitions are caused by band-tail states in CdS nanoparticles.
Silica-glass contribution to the effective nonlinearity of hollow-core photonic band-gap fibers.
Hensley, Christopher J; Ouzounov, Dimitre G; Gaeta, Alexander L; Venkataraman, Natesan; Gallagher, Michael T; Koch, Karl W
2007-03-19
We measure the effective nonlinearity of various hollow-core photonic band-gap fibers. Our findings indicate that differences of tens of nanometers in the fiber structure result in significant changes to the power propagating in the silica glass and thus in the effective nonlinearity of the fiber. These results show that it is possible to engineer the nonlinear response of these fibers via small changes to the glass structure.
2011-05-06
Final Report for AOARD Grant 1014069 “Tunable PhoXonic Band Gap Materials from Self-Assembly of Block Copoliymers and Colloidal Nanocrystals...NBIT Phase II)” 5 July 2011 Name of Principal Investigators: Edwin L Thomas, Dept of Materials Science and Engineering, MIT e-mail address... elt @mit.edu Institution : Massachusetts Institute of Technology Mailing Address : 77 Mass. Avenue, 6-113, Cambridge, MA 02139 Phone : 617-253-6901
Band gap bowing and electron localization of (GaxIn1-x)N
Energy Technology Data Exchange (ETDEWEB)
Lee, Byounghak; Wang, Lin-Wang
2006-05-09
The band gap bowing and the electron localization ofGaxIn1-xN are calculated using both the local density approximation (LDA)and screened-exchange local density functional (sX-LDA) methods. Thecalculated sX-LDA band gaps are in good agreement with the experimentallyobserved values, with errors of -0.26 and 0.09 eV for bulk GaN and InN,respectively. The LDA band gap errors are 1.33 and 0.81 eV for GaN andInN, in order. In contrast to the gap itself, the band gap bowingparameter is found to be very similar in sX-LDA and LDA. We identify thelocalization of hole states in GaxIn1-xN alloys along In-N-In chains. Thepredicted localizationis stronger in sX-LDA.
Reversible tuning of ZnO optical band gap by plasma treatment
Energy Technology Data Exchange (ETDEWEB)
Lee, Szetsen, E-mail: slee@cycu.edu.tw [Department of Chemistry and Center for Nano-technology, Chung Yuan Christian University, Jhongli, Taoyuan 32023, Taiwan (China); Peng, Jr-Wei [Department of Chemistry and Center for Nano-technology, Chung Yuan Christian University, Jhongli, Taoyuan 32023, Taiwan (China); Ho, Ching-Yuan [Department of Mechanical Engineering, Chung Yuan Christian University, Jhongli, Taoyuan 32023, Taiwan (China)
2011-12-15
Highlights: Black-Right-Pointing-Pointer The ZnO optical band gap blue-shifts with hydrogen plasma treatment. Black-Right-Pointing-Pointer The ZnO optical band gap red-shifts with oxygen plasma treatment. Black-Right-Pointing-Pointer The ZnO optical band gap can be reversibly fine-tuned. - Abstract: Zinc oxide (ZnO) films synthesized by reacting zinc nitrate with hexamethylenetetramine were treated with hydrogen and oxygen plasmas. From UV-visible absorption and optical emission inspection, we have found that the optical band gap of ZnO films blue-shifted with hydrogen plasma treatment, but red-shifted with oxygen plasma treatment. By alternating the treatment sequence of hydrogen and oxygen plasmas, the ZnO optical band gap can be reversibly fine-tuned with the tunable range up to 80 meV. Scanning electron microscopy characterization indicates that the variation of the optical band gap is attributed to the competition between amorphous and crystalline forms of ZnO. The mechanism of reversible optical band gap tuning is discussed.
Carrier concentration dependence of band gap shift in n-type ZnO:Al films
Lu, J. G.; Fujita, S.; Kawaharamura, T.; Nishinaka, H.; Kamada, Y.; Ohshima, T.; Ye, Z. Z.; Zeng, Y. J.; Zhang, Y. Z.; Zhu, L. P.; He, H. P.; Zhao, B. H.
2007-04-01
Al-doped ZnO (AZO) thin films have been prepared by mist chemical vapor deposition and magnetron sputtering. The band gap shift as a function of carrier concentration in n-type zinc oxide (ZnO) was systematically studied considering the available theoretical models. The shift in energy gap, evaluated from optical absorption spectra, did not depend on sample preparations; it was mainly related to the carrier concentrations and so intrinsic to AZO. The optical gap increased with the electron concentration approximately as ne2/3 for ne≤4.2×1019 cm-3, which could be fully interpreted by a modified Burstein-Moss (BM) shift with the nonparabolicity of the conduction band. A sudden decrease in energy gap occurred at 5.4-8.4×1019 cm-3, consistent with the Mott criterion for a semiconductor-metal transition. Above the critical values, the band gap increased again at a different rate, which was presumably due to the competing BM band-filling and band gap renormalization effects, the former inducing a band gap widening and the latter an offsetting narrowing. The band gap narrowing (ΔEBGN) derived from the band gap renormalization effect did not show a good ne1/3 dependence predicated by a weakly interacting electron-gas model, but it was in excellent agreement with a perturbation theory considering different many-body effects. Based on this theory a simple expression, ΔEBGN=Ane1/3+Bne1/4+Cne1/2, was deduced for n-type ZnO, as well as p-type ZnO, with detailed values of A, B, and C coefficients. An empirical relation once proposed for heavily doped Si could also be used to describe well this gap narrowing in AZO.
Compositional dependence of optical band gap and refractive index in lead and bismuth borate glasses
Energy Technology Data Exchange (ETDEWEB)
Mallur, Saisudha B.; Czarnecki, Tyler; Adhikari, Ashish; Babu, Panakkattu K.
2015-08-15
Highlights: • Refractive indices increase with increasing PbO/Bi{sub 2}O{sub 3} content. • Optical band gap arises due to direct forbidden transition. • Optical band gaps decrease with increasing PbO/Bi{sub 2}O{sub 3} content. • New empirical relation between the optical band gap and the refractive index. - Abstract: We prepared a series of lead and bismuth borate glasses by varying PbO/Bi{sub 2}O{sub 3} content and studied refractive index and optical band gap as a function of glass composition. Refractive indices were measured very accurately using a Brewster’s angle set up while the optical band gaps were determined by analyzing the optical absorption edge using the Mott–Davis model. Using the Lorentz–Lorentz method and the effective medium theory, we calculated the refractive indices and then compared them with the measured values. Bismuth borate glasses show better agreement between the calculated values of the refractive index and experimental values. We used a differential method based on Mott–Davis model to obtain the type of transition and optical band gap (E{sub opt}) which in turn was compared with the value of E{sub opt} obtained using the extinction coefficient. Our analysis shows that in both lead and bismuth borate glasses, the optical band gap arises due to direct forbidden transition. With increasing PbO/Bi{sub 2}O{sub 3} content, the absorption edge shifts toward longer wavelengths and the optical band gap decreases. This behavior can be explained in terms of changes to the Pb−O/Bi−O chemical bonds with glass composition. We obtained a new empirical relation between the optical band gap and the refractive index which can be used to accurately determine the electronic oxide polarizability in lead and bismuth oxide glasses.
X-Band Photonic Band-Gap Accelerator Structure Breakdown Experiment
Energy Technology Data Exchange (ETDEWEB)
Marsh, Roark A.; /MIT /MIT /NIFS, Gifu /JAERI, Kyoto /LLNL, Livermore; Shapiro, Michael A.; Temkin, Richard J.; /MIT; Dolgashev, Valery A.; Laurent, Lisa L.; Lewandowski, James R.; Yeremian, A.Dian; Tantawi, Sami G.; /SLAC
2012-06-11
In order to understand the performance of photonic band-gap (PBG) structures under realistic high gradient, high power, high repetition rate operation, a PBG accelerator structure was designed and tested at X band (11.424 GHz). The structure consisted of a single test cell with matching cells before and after the structure. The design followed principles previously established in testing a series of conventional pillbox structures. The PBG structure was tested at an accelerating gradient of 65 MV/m yielding a breakdown rate of two breakdowns per hour at 60 Hz. An accelerating gradient above 110 MV/m was demonstrated at a higher breakdown rate. Significant pulsed heating occurred on the surface of the inner rods of the PBG structure, with a temperature rise of 85 K estimated when operating in 100 ns pulses at a gradient of 100 MV/m and a surface magnetic field of 890 kA/m. A temperature rise of up to 250 K was estimated for some shots. The iris surfaces, the location of peak electric field, surprisingly had no damage, but the inner rods, the location of the peak magnetic fields and a large temperature rise, had significant damage. Breakdown in accelerator structures is generally understood in terms of electric field effects. These PBG structure results highlight the unexpected role of magnetic fields in breakdown. The hypothesis is presented that the moderate level electric field on the inner rods, about 14 MV/m, is enhanced at small tips and projections caused by pulsed heating, leading to breakdown. Future PBG structures should be built to minimize pulsed surface heating and temperature rise.
Chemical Vapor Deposition of Monolayer Mo(1-x)W(x)S2 Crystals with Tunable Band Gaps.
Wang, Ziqian; Liu, Pan; Ito, Yoshikazu; Ning, Shoucong; Tan, Yongwen; Fujita, Takeshi; Hirata, Akihiko; Chen, Mingwei
2016-02-22
Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo(1-x)W(x)S2 crystals, the successful growth of Mo(1-x)W(x)S2 monolayers with tunable Mo/W ratios has not been realized by conventional chemical vapor deposition. Herein, we developed a low-pressure chemical vapor deposition (LP-CVD) method to grow monolayer Mo(1-x)W(x)S2 (x = 0-1) 2D crystals with a wide range of Mo/W ratios. Raman spectroscopy and high-resolution transmission electron microscopy demonstrate the homogeneous mixture of Mo and W in the 2D alloys. Photoluminescence measurements show that the optical band gaps of the monolayer Mo(1-x)W(x)S2 crystals strongly depend on the Mo/W ratios and continuously tunable band gap can be achieved by controlling the W or Mo portion by the LP-CVD.
Gorisse, M.; Benchabane, S.; Teissier, G.; Billard, C.; Reinhardt, A.; Laude, V.; Defaÿ, E.; Aïd, M.
2011-06-01
We report on the observation of elastic waves propagating in a two-dimensional phononic crystal composed of air holes drilled in an aluminum nitride membrane. The theoretical band structure indicates the existence of an acoustic band gap centered around 800 MHz with a relative bandwidth of 6.5% that is confirmed by gigahertz optical images of the surface displacement. Further electrical measurements and computation of the transmission reveal a much wider attenuation band that is explained by the deaf character of certain bands resulting from the orthogonality of their polarization with that of the source.
Synthesis and Characterization of Small Band-gap Conjugated Polymers - Poly(pyrrolyl methines)
Institute of Scientific and Technical Information of China (English)
无
2002-01-01
A kind of small band-gap conjugated polymers-poly (pyrrolyl methines) and their precursors-(poly pyrrolyl methanes) have been synthesized by a simple method and characterized by 1HNMR, FT-IR, TGA and UV-Vis. These polymers can be dissolved in high polar solvents such as DMSO, DMF or NMP. The results reveals that the band-gap of the synthesized conjugated polymers are in the range of 0.96～1.14 eV and they all belong to the small band-gap polymers. The conductivity of doped products with iodine is in the range of semiconductor.
Band-gap narrowing in heavily doped silicon at 20 and 300 K studied by photoluminescence
Wagner, Joachim
1985-07-01
The band-gap shrinkage in heavily doped n- and p-type silicon is studied by photoluminescence both at low temperatures (20 K) and at room temperature (300 K). A line-shape analysis was performed to determine the indirect band-gap energy from the emission spectra. Within the experimental accuracy the same band-gap shift is observed at room temperature as at low temperature. The present results are compared with experimental data from other optical studies and with theoretical calculations.
Alejo-Molina, Adalberto; Romero-Antequera, David L.; Sánchez-Mondragón, José J.
2014-02-01
In this work, we demonstrate the existence of structural metallic band gaps in a ternary material, dielectric-dielectric-metal, and we show analytical equations for their computation. We show the existence of metallic band gaps not only in the lowest band but also for high frequencies. These gaps are structural ones but different and additional to the dielectric ones in the dielectric photonic crystal substrate. Therefore, as the desire properties of both, the dielectric and metallic photonic crystals, are present the applications for this particular structure are straightforward.
Optimization of band gaps of 2D photonic crystals by the rapid generic algorithm
Institute of Scientific and Technical Information of China (English)
SUN Yun-tao
2011-01-01
@@ Based on the rapid genetic algorithm (RGA), the band gap structures of square lattices with square scatters are optimized.In the optimizing process, gene codes are used to express square scatters and the fitting function adopts the relative values of the largest absolute photonic band gaps (PBGs).By changing the value of filling factor, three cell forms with large photonic band gaps are obtained.In addition, the comparison between the rapid genetic algorithm and the general genetic algorithm (GGA) is analyzed.
Analysis of two-dimensional photonic band gap structure with a rhombus lattice
Institute of Scientific and Technical Information of China (English)
Limei Qi; Ziqiang Yang; Xi Gao; Zheng Liang
2008-01-01
@@ The relative band gap for a rhombus lattice photonic crystal is studied by plane wave expansion method and high frequency structure simulator (HFSS) simulation. General wave vectors in the first Briliouin zone are derived. The relative band gap as a function of air-filling factor and background material is investigated, respectively, and the nature of photonic band gap for different lattice angles is analyzed by the distribution of electric energy. These results would provide theoretical instruction for designing optical integrated devices using photonic crystal with a rhombus lattice.
Yudistira, D; Boes, A; Djafari-Rouhani, B; Pennec, Y; Yeo, L Y; Mitchell, A; Friend, J R
2014-11-21
We theoretically and experimentally demonstrate the existence of complete surface acoustic wave band gaps in surface phonon-polariton phononic crystals, in a completely monolithic structure formed from a two-dimensional honeycomb array of hexagonal shape domain-inverted inclusions in single crystal piezoelectric Z-cut lithium niobate. The band gaps appear at a frequency of about twice the Bragg band gap at the center of the Brillouin zone, formed through phonon-polariton coupling. The structure is mechanically, electromagnetically, and topographically homogeneous, without any physical alteration of the surface, offering an ideal platform for many acoustic wave applications for photonics, phononics, and microfluidics.
Modelling and design of complete photonic band gaps in two-dimensional photonic crystals
Indian Academy of Sciences (India)
Yogita Kalra; R K Sinha
2008-01-01
In this paper, we investigate the existence and variation of complete photonic band gap size with the introduction of asymmetry in the constituent dielectric rods with honeycomb lattices in two-dimensional photonic crystals (PhC) using the plane-wave expansion (PWE) method. Two examples, one consisting of elliptical rods and the other comprising of rectangular rods in honeycomb lattices are considered with a view to estimate the design parameters for maximizing the complete photonic band gap. Further, it has been shown that complete photonic band gap size changes with the variation in the orientation angle of the constituent dielectric rods.
Study of periodic band gap structure of the magnetized plasma photonic crystals
Institute of Scientific and Technical Information of China (English)
ZHANG Hai-feng; MA Li; LIU Shao-bin
2009-01-01
The characteristics of the periodic band gaps of the one dimension magnetized plasma photonic crystals are studied with the piecewise linear current density recursive convolution (PLCDRC) finite-differential time-domain (FDTD) method. In fre-quency-domain, the transmission coefficients of electromagnetic Gaussian pulses are computed, and the effects of the periodic structure constant, plasma layer thickness and parameters of plasma on the properties of periodic band gaps of magnetized photonic crystals are analyzed. The results show that the periodic band gaps depend strongly on the plasma parameters.
Manzanares-Martinez, J; Archuleta-Garcia, R; Moctezuma-Enriquez, D
2010-01-01
In this work we show theoretically that it is possible to design a large band gap in the infrared range using a one-dimensional Photonic Crystal heterostructure made of porous silicon. Stacking together multiple photonic crystal substructures of the same contrast index, but of different lattice periods, it is possible to broad the narrow forbidden band gap that can be reached by the low contrast index of the porous silicon multilayers. The main idea in this work is that we can construct a Giant Photonic Band Gap -as large as desired- by combining a tandem of photonic crystals substructures by using a simple analytical rule to determine the period of each substructure.
Flexural vibration band gaps in thin plates with two-dimensional binary locally resonant structures
Institute of Scientific and Technical Information of China (English)
Yu Dian-Long; Wang Gang; Liu Yao-Zong; Wen Ji-Hong; Qiu Jing
2006-01-01
The complete flexural vibration band gaps are studied in the thin plates with two-dimensional binary locally resonant structures, i.e. the composite plate consisting of soft rubber cylindrical inclusions periodically placed in a host material. Numerical simulations show that the low-frequency gaps of flexural wave exist in the thin plates. The width of the first gap decreases monotonically as the matrix density increases. The frequency response of the finite periodic thin plates is simulated by the finite element method, which provides attenuations of over 20dB in the frequency range of the band gaps. The findings will be significant in the application of phononic crystals.
Band gaps and cavity modes in dual phononic and photonic strip waveguides
Directory of Open Access Journals (Sweden)
Y. Pennec
2011-12-01
Full Text Available We discuss theoretically the simultaneous existence of phoxonic, i.e., dual phononic and photonic, band gaps in a periodic silicon strip waveguide. The unit-cell of this one-dimensional waveguide contains a hole in the middle and two symmetric stubs on the sides. Indeed, stubs and holes are respectively favorable for creating a phononic and a photonic band gap. Appropriate geometrical parameters allow us to obtain a complete phononic gap together with a photonic gap of a given polarization and symmetry. The insertion of a cavity inside the perfect structure provides simultaneous confinement of acoustic and optical waves suitable to enhance the phonon-photon interaction.
Systematic analysis of the unique band gap modulation of mixed halide perovskites.
Kim, Jongseob; Lee, Sung-Hoon; Chung, Choong-Heui; Hong, Ki-Ha
2016-02-14
Solar cells based on organic-inorganic hybrid metal halide perovskites have been proven to be one of the most promising candidates for the next generation thin film photovoltaic cells. Mixing Br or Cl into I-based perovskites has been frequently tried to enhance the cell efficiency and stability. One of the advantages of mixed halides is the modulation of band gap by controlling the composition of the incorporated halides. However, the reported band gap transition behavior has not been resolved yet. Here a theoretical model is presented to understand the electronic structure variation of metal mixed-halide perovskites through hybrid density functional theory. Comparative calculations in this work suggest that the band gap correction including spin-orbit interaction is essential to describe the band gap changes of mixed halides. In our model, both the lattice variation and the orbital interactions between metal and halides play key roles to determine band gap changes and band alignments of mixed halides. It is also presented that the band gap of mixed halide thin films can be significantly affected by the distribution of halide composition.
Energy band gap and optical transition of metal ion modified double crossover DNA lattices.
Dugasani, Sreekantha Reddy; Ha, Taewoo; Gnapareddy, Bramaramba; Choi, Kyujin; Lee, Junwye; Kim, Byeonghoon; Kim, Jae Hoon; Park, Sung Ha
2014-10-22
We report on the energy band gap and optical transition of a series of divalent metal ion (Cu(2+), Ni(2+), Zn(2+), and Co(2+)) modified DNA (M-DNA) double crossover (DX) lattices fabricated on fused silica by the substrate-assisted growth (SAG) method. We demonstrate how the degree of coverage of the DX lattices is influenced by the DX monomer concentration and also analyze the band gaps of the M-DNA lattices. The energy band gap of the M-DNA, between the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), ranges from 4.67 to 4.98 eV as judged by optical transitions. Relative to the band gap of a pristine DNA molecule (4.69 eV), the band gap of the M-DNA lattices increases with metal ion doping up to a critical concentration and then decreases with further doping. Interestingly, except for the case of Ni(2+), the onset of the second absorption band shifts to a lower energy until a critical concentration and then shifts to a higher energy with further increasing the metal ion concentration, which is consistent with the evolution of electrical transport characteristics. Our results show that controllable metal ion doping is an effective method to tune the band gap energy of DNA-based nanostructures.
Residual stress dependant anisotropic band gap of various (hkl) oriented BaI2 films
Kumar, Pradeep; Gulia, Vikash; Vedeshwar, Agnikumar G.
2013-11-01
The thermally evaporated layer structured BaI2 grows in various completely preferred (hkl) film orientations with different growth parameters like film thickness, deposition rate, substrate temperature, etc. which were characterized by structural, morphological, and optical absorption measurements. Structural analysis reveals the strain in the films and the optical absorption shows a direct type band gap. The varying band gaps of these films were found to scale linearly with their strain. The elastic moduli and other constants were also calculated using Density Functional Theory (DFT) formalism implemented in WIEN2K code for converting the strain into residual stress. Films of different six (hkl) orientations show stress free anisotropic band gaps (2.48-3.43 eV) and both positive and negative pressure coefficients. The negative and positive pressure coefficients of band gap are attributed to the strain in I-I (or Ba-Ba or both) and Ba-I distances along [hkl], respectively. The calculated band gaps are also compared with those experimentally determined. The average pressure coefficient of band gap of all six orientations (-0.071 eV/GPa) found to be significantly higher than that calculated (-0.047 eV/GPa) by volumetric pressure dependence. Various these issues have been discussed with consistent arguments. The electron effective mass me*=0.66m0 and the hole effective mass mh*=0.53m0 have been determined from the calculated band structure.
Hypersonic modulation of light in three-dimensional photonic and phononic band-gap materials.
Akimov, A V; Tanaka, Y; Pevtsov, A B; Kaplan, S F; Golubev, V G; Tamura, S; Yakovlev, D R; Bayer, M
2008-07-18
The elastic coupling between the a-SiO2 spheres composing opal films brings forth three-dimensional periodic structures which besides a photonic stop band are predicted to also exhibit complete phononic band gaps. The influence of elastic crystal vibrations on the photonic band structure has been studied by injection of coherent hypersonic wave packets generated in a metal transducer by subpicosecond laser pulses. These studies show that light with energies close to the photonic band gap can be efficiently modulated by hypersonic waves.
Calculation of effective band gap narrowing in heavily-doped and compensated silicon
Polsky, B. S.; Rimshans, J. S.
1991-06-01
The effective band gap narrowing in heavily-doped and compensated silicon for different values of impurity concentration is calculated within the semiclassical approximation. The calculated and known measured data are compared.
Vibration band-gap properties of three-dimensional Kagome lattices using the spectral element method
Wu, Zhi-Jing; Li, Feng-Ming; Zhang, Chuanzeng
2015-04-01
The spectral element method (SEM) is extended to investigate the vibration band-gap properties of three-dimensional (3D) Kagome lattices. The dynamic stiffness matrix of the 3D element which contains bending, tensional and torsional components is derived. The spectral equations of motion of the whole 3D Kagome lattice are then established. Comparing with frequency-domain solutions calculated by the finite element method (FEM), the accuracy and the feasibility of the SEM solutions are verified. It can be shown that the SEM is suitable for analyzing the vibration band-gap properties. Due to the band-gap characteristics, the periodic 3D Kagome lattice has the performance of vibration isolation. The influences of the structural and material parameters on the vibration band-gaps are discussed and a new type of 3D Kagome lattice is designed to obtain the improved vibration isolation capability.
Tunable Photonic Band Gaps In Photonic Crystal Fibers Filled With a Cholesteric Liquid Crystal
Institute of Scientific and Technical Information of China (English)
Thomas; Tanggaard; Larsen; David; Sparre; Hermann; Anders; Bjarklev
2003-01-01
A photonic crystal fiber has been filled with a cholesteric liquid crystal. A temperature sensitive photonic band gap effect was observed, which was especially pronounced around the liquid crystal phase transition temperature.
Accurate evaluation of lowest band gaps in ternary locally resonant phononic crystals
Institute of Scientific and Technical Information of China (English)
Wang Gang; Shao Li-Hui; Liu Yao-Zong; Wen Ji-Hong
2006-01-01
Based on a better understanding of the lattice vibration modes, two simple spring-mass models are constructed in order to evaluate the frequencies on both the lower and upper edges of the lowest locally resonant band gaps of the ternary locally resonant phononic crystals. The parameters of the models are given in a reasonable way based on the physical insight into the band gap mechanism. Both the lumped-mass methods and our models are used in the study of the influences of structural and the material parameters on frequencies on both edges of the lowest gaps in the ternary locally resonant phononic crystals. The analytical evaluations with our models and the theoretical predictions with the lumped-mass method are in good agreement with each other. The newly proposed heuristic models are helpful for a better understanding of the locally resonant band gap mechanism, as well as more accurate evaluation of the band edge frequencies.
Manipulating full photonic band gaps in two dimensional birefringent photonic crystals.
Proietti Zaccaria, Remo; Verma, Prabhat; Kawaguchi, Satoshi; Shoji, Satoru; Kawata, Satoshi
2008-09-15
The probability to realize a full photonic band gap in two-dimensional birefringent photonic crystals can be readily manipulated by introducing symmetry reduction or air holes in the crystal elements. The results lie in either creation of new band gaps or enlargement of existing band gaps. In particular, a combination of the two processes produces an effect much stronger than a simple summation of their individual contributions. Materials with both relatively low refractive index (rutile) and high refractive index (tellurium) were considered. The combined effect of introduction of symmetry reduction and air holes resulted in a maximum enlargement of the band gaps by 8.4% and 20.2%, respectively, for the two materials.
Shape optimization of phononic band gap structures using the homogenization approach
Vondřejc, Jaroslav; Heczko, Jan
2016-01-01
The paper deals with optimization of the acoustic band gaps computed using the homogenized model of strongly heterogeneous elastic composite which is constituted by soft inclusions periodically distributed in stiff elastic matrix. We employ the homogenized model of such medium to compute intervals - band gaps - of the incident wave frequencies for which acoustic waves cannot propagate. It was demonstrated that the band gaps distribution can be influenced by changing the shape of inclusions. Therefore, we deal with the shape optimization problem to maximize low-frequency band gaps; their bounds are determined by analyzing the effective mass tensor of the homogenized medium. Analytic transformation formulas are derived which describe dispersion effects of resizing the inclusions. The core of the problem lies in sensitivity of the eigenvalue problem associated with the microstructure. Computational sensitivity analysis is developed, which allows for efficient using of the gradient based optimization methods. Num...
Study on the vibration band gap and vibration attenuation property of phononic crystals
Institute of Scientific and Technical Information of China (English)
2008-01-01
Phononic crystals (PCs) are functional materials with periodic structures and elas- tic wave (vibration) band gaps, where propagation of vibrations with frequencies within band gaps is forbidden. PCs with finite periods can restrain the propagation of vibrations with frequencies in band gaps and thus has vibration attenuation property. Worldwide, many institutions and researchers are engaged in the re- search of PCs, however, studies on the vibration attenuation property of PCs are still limited. In this paper, we report our study of band gaps and vibration attenua- tion properties of 1) a simplified PC—periodic mass-spring structures, 2) longitu- dinal vibration of one-dimensional (1D-), 2D-, 3D-PCs, and 3) the flexural vibration of 1D- and 2D-PCs. These studies provide a foundation for the applications of PCs in vibration attenuation.
Study on the vibration band gap and vibration attenuation property of phononic crystals
Institute of Scientific and Technical Information of China (English)
无
2008-01-01
Phononic crystals (PCs) are functional materials with periodic structures and elastic wave (vibration) band gaps, where propagation of vibrations with frequencies within band gaps is forbidden. PCs with finite periods can restrain the propagation of vibrations with frequencies in band gaps and thus has vibration attenuation property. Worldwide, many institutions and researchers are engaged in the research of PCs, however, studies on the vibration attenuation property of PCs are still limited. In this paper, we report our study of band gaps and vibration attenuation properties of 1) a simplified PC-periodic mass-spring structures, 2) longitudinal vibration of one-dimensional (1D-), 2D-, 3D-PCs, and 3) the flexural vibration of 1D- and 2D-PCs. These studies provide a foundation for the applications of PCs in vibration attenuation.
Band gap narrowing models tested on low recombination phosphorus laser doped silicon
Dahlinger, Morris; Carstens, Kai
2016-10-01
This manuscript discusses bandgap narrowing models for highly phosphorus doped silicon. We simulate the recombination current pre-factor J0,phos in PC1Dmod 6.2 of measured doping profiles and apply the theoretical band gap narrowing model of Schenk [J. Appl. Phys. 84, 3684 (1998)] and an empirical band gap narrowing model of Yan and Cuevas [J. Appl. Phys. 114, 044508 (2013)]. The recombination current pre-factor of unpassivated and passivated samples measured by the photo conductance measurement and simulated J0,phos agrees well, when the band gap narrowing model of Yan and Cuevas is applied. With the band gap narrowing model of Schenk, the simulation cannot reproduce the measured J0,phos. Furthermore, the recombination current pre-factor of our phosphorus laser doped silicon samples are comparable with furnace diffused samples. There is no indication of recombination active defects, thus no laser induced defects in the diffused volume.
Isotropic properties of the photonic band gap in quasicrystals with low-index contrast
Rose, Priya; Abbate, G; Andreone, A
2011-01-01
We report on the formation and development of the photonic band gap in two-dimensional 8-, 10- and 12-fold symmetry quasicrystalline lattices of low index contrast. Finite size structures made of dielectric cylindrical rods were studied and measured in the microwave region, and their properties compared with a conventional hexagonal crystal. Band gap characteristics were investigated by changing the direction of propagation of the incident beam inside the crystal. Various angles of incidence from 0 \\degree to 30\\degree were used in order to investigate the isotropic nature of the band gap. The arbitrarily high rotational symmetry of aperiodically ordered structures could be practically exploited to manufacture isotropic band gap materials, which are perfectly suitable for hosting waveguides or cavities.
Tunable gaps and enhanced mobilities in strain-engineered silicane
Energy Technology Data Exchange (ETDEWEB)
Restrepo, Oscar D.; Mishra, Rohan; Windl, Wolfgang, E-mail: windl@matsceng.ohio-state.edu [Department of Materials Science and Engineering, the Ohio State University, Columbus, Ohio 43210 (United States); Goldberger, Joshua E. [Department of Chemistry and Biochemistry, the Ohio State University, Columbus, Ohio 43210 (United States)
2014-01-21
The recent demonstration of single-atom thick, sp{sup 3}-hybridized group 14 analogues of graphene enables the creation of materials with electronic structures that are manipulated by the nature of the covalently bound substituents above and below the sheet. These analogues can be electronically derived from isolated (111) layers of the bulk diamond lattice. Here, we perform systematic Density Functional Theory calculations to understand how the band dispersions, effective masses, and band gaps change as the bulk silicon (111) layers are continuously separated from each other until they are electronically isolated, and then passivated with hydrogen. High-level calculations based on HSE06 hybrid functionals were performed on each endpoint to compare directly with experimental values. We find that the change in the electronic structure due to variations in the Si-H bond length, Si-Si-Si bond angle, and most significantly the Si-Si bond length can tune the nature of the band gap from indirect to direct with dramatic effects on the transport properties. First-principles calculations of the phonon-limited electron mobility predict a value of 464 cm{sup 2}/Vs for relaxed indirect band gap Si-H monolayers at room temperature. However, for 1.6% tensile strain, the band gap becomes direct, which increases the mobility significantly (8 551 cm{sup 2}/Vs at 4% tensile strain). In total, this analysis of Si-based monolayers suggests that strain can change the nature of the band gap from indirect to direct and increase the electron mobility more than 18-fold.
Band-gap narrowing in heavily doped silicon: A comparison of optical and electrical data
Wagner, Joachim; del Alamo, Jesús A.
1988-01-01
The band-gap narrowing in heavily doped silicon has been studied by optical techniques—namely, photoluminescence and photoluminescence excitation spectroscopy—and by electrical measurements on bipolar transistors. The optical experiments give a consistent set of data for the band-gap narrowing in n- and p-type material at low temperatures as well as at room temperature. A good agreement is found between the optical and electrical data removing the discrepancies existing so far in the literature.
Loss properties of all-solid photonic band gap fibers with an array of rings
Institute of Scientific and Technical Information of China (English)
GENG You-fu; LI Xue-jin; TAN Xiao-ling; YAO Jian-quan
2010-01-01
@@ The confinement loss and bend loss properties of all-solid photonic band gap fibers with an array of rings doped with highindex material are investigated.The calculated results show that for a specific structure,the confinement loss and the critical bend radius are reduced simultaneously in some band gaps by increasing the inner diameter of ring,which provides a useful guide and a theoretical basis for designing large mode area fibers with low loss.
Variable band-gap semiconductors as the basis of new solar cells
Energy Technology Data Exchange (ETDEWEB)
Morales-Acevedo, Arturo [Centro de Investigacion y de Estudios Avanzados del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, DF (Mexico)
2009-09-15
Some basic concepts related to variable band-gap absorbing semiconductors in solar cell structures, such as the associated quasi-electric field, will be discussed. The effects of this quasi-electric field upon the minority carrier drift-diffusion length and the back surface recombination velocity may induce a larger generated carrier collection at the junction with the corresponding increase of the illumination current density. It will also be shown that an additional improvement of the open-circuit voltage is possible when the band-gap is reduced within the space charge region so that the dark saturation current density is reduced there. Our estimation is that in the case of a solar cell where the band-gap is changed about 0.5 eV within the space charge region, an increase of the open-circuit voltage around 115 mV will be observed with respect to the single minimum band-gap absorbing material case. A similar band-gap variation in the bulk of the material will cause an increase of the minority carrier drift-diffusion length by a factor of 10 with respect to the single band-gap material. Therefore, based on these physical concepts, two possible structures with variable band-gap layers are proposed in order to have higher efficiencies than for cells without any band-gap grading. It will be shown that these concepts can be applied to II-VI, III-V chalcopyrite and even amorphous semiconductor solar cells. (author)
Study on band gap structure of Fibonacci quantum superlattices by using the transfer matrix method
Ferrando, V.; Castro-Palacio, J. C.; Marí, B.; Monsoriu, J. A.
2014-02-01
The scattering properties of particles in a one-dimensional Fibonacci sequence based potential have been analyzed by means of the Transfer Matrix Method. The electronic band gaps are examined comparatively with those obtained using the corresponding periodic potentials. The reflection coefficient shows self-similar properties for the Fibonacci superlattices. Moreover, by using the generalized Bragg's condition, the band gaps positions are derived from the golden mean involved in the design of the superlattice structure.
Wide band gap tunability in complex transition metal oxides by site-specific substitution
Choi, Woo Seok; Chisholm, Matthew F.; Singh, David J.; Choi, Taekjib; Jellison Jr, Gerald E.; Lee, Ho Nyung
2012-01-01
Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, ...
Robust room temperature ferromagnetism and band gap tuning in nonmagnetic Mg doped ZnO films
Quan, Zhiyong; Liu, Xia; Qi, Yan; Song, Zhilin; Qi, Shifei; Zhou, Guowei; Xu, Xiaohong
2017-03-01
Mg doped ZnO films with hexagonal wurtzite structure were deposited on c-cut sapphire Al2O3 substrates by pulsed laser deposition. Both room temperature ferromagnetism and band gap of the films simultaneously tuned by the concentration of oxygen vacancies were performed. Our results further reveal that the singly occupied oxygen vacancies should be responsible for the room temperature ferromagnetism and band gap narrowing. Singly occupied oxygen vacancies having the localized magnetic moments form bound magnetic polarons, which results in a long-range ferromagnetic ordering due to Mg doping. Moreover, band gap narrowing of the films is probably due to the formation of impurity band in the vicinity of valence band, originating from singly occupied oxygen vacancies. These results may build a bridge to understand the relationship between the magnetic and optical properties in oxide semiconductor, and are promising to integrate multiple functions in one system.
Reducing support loss in micromechanical ring resonators using phononic band-gap structures
Hsu, Feng-Chia; Hsu, Jin-Chen; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin
2011-09-01
In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.
Tuning the band gap in hybrid tin iodide perovskite semiconductors using structural templating.
Knutson, Jeremy L; Martin, James D; Mitzi, David B
2005-06-27
Structural distortions within the extensive family of organic/inorganic hybrid tin iodide perovskite semiconductors are correlated with their experimental exciton energies and calculated band gaps. The extent of the in- and out-of-plane angular distortion of the SnI4(2-) perovskite sheets is largely determined by the relative charge density and steric requirements of the organic cations. Variation of the in-plane Sn-I-Sn bond angle was demonstrated to have the greatest impact on the tuning of the band gap, and the equatorial Sn-I bond distances have a significant secondary influence. Extended Hückel tight-binding band calculations are employed to decipher the crystal orbital origins of the structural effects that fine-tune the band structure. The calculations suggest that it may be possible to tune the band gap by as much as 1 eV using the templating influence of the organic cation.
Reducing support loss in micromechanical ring resonators using phononic band-gap structures
Energy Technology Data Exchange (ETDEWEB)
Hsu, Feng-Chia; Huang, Tsun-Che; Wang, Chin-Hung; Chang, Pin [Industrial Technology Research Institute-South, Tainan 709, Taiwan (China); Hsu, Jin-Chen, E-mail: fengchiahsu@itri.org.t, E-mail: hsujc@yuntech.edu.t [Department of Mechanical Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 64002, Taiwan (China)
2011-09-21
In micromechanical resonators, energy loss via supports into the substrates may lead to a low quality factor. To eliminate the support loss, in this paper a phononic band-gap structure is employed. We demonstrate a design of phononic-crystal (PC) strips used to support extensional wine-glass mode ring resonators to increase the quality factor. The PC strips are introduced to stop elastic-wave propagation by the band-gap and deaf-band effects. Analyses of resonant characteristics of the ring resonators and the dispersion relations, eigenmodes, and transmission properties of the PC strips are presented. With the proposed resonator architecture, the finite-element simulations show that the leaky power is effectively reduced and the stored energy inside the resonators is enhanced simultaneously as the operating frequencies of the resonators are within the band gap or deaf bands. Realization of a high quality factor micromechanical ring resonator with minimized support loss is expected.
Influence of process parameters on band gap of AI-doped ZnO film
Institute of Scientific and Technical Information of China (English)
Diqiu HUANG; Xiangbin ZENG; Yajuan ZHENG; Xiaojin WANG; Yanyan YANG
2013-01-01
This paper presents the influence of process parameters, such as argon （Ar） flow rate, sputtering power and substrate temperature on the band gap of Al-doped ZnO film, Al-doped ZnO thin films were fabricated by radio frequency （RF） magnetron sputtering technology and deposited on polyimide and glass substrates. Under different Ar flow rates varied from 30 to 70 sccm, the band gap of thin films were changed from 3.56 to 3.67 eV. As sputtering power ranged from 125 to 200 W, the band gap was varied from 3.28 to 3.82 eV; the band gap was between 3.41 and 3.88 eV as substrate temperature increases from 150℃ to 300℃. Furthermore, the correlation between carrier concentration and band gap was investigated by HALL. These results demonstrate that the band gap of the Al-doped ZnO thin film can be adjusted by changing the Ar flow rate, sputtering power and substrate temperature, which can improve the performance of semiconductor devices related to Al-doped ZnO thin film.
Acoustic band gaps in two-dimensional square arrays of semi-hollow circular cylinders
Institute of Scientific and Technical Information of China (English)
T.; Kim
2009-01-01
Concave surfaces focus sound while convex surfaces disperse sound. It is therefore interesting to know if it is possible to make use of these two opposite characteristics to enhance the band gap performance of periodic arrays of solid cylinders in air. In this paper, the band gap characteristics of a 2-D square array of semi-hollow circular cylinders embedded in air are investigated, both experimentally and theoretically. In comparison with the types of inclusion studied by previous researchers, a semi-hollow circular cylinder is unique in the sense that it has concave inner surfaces and convex outer surfaces. The finite difference time domain (FDTD) method is employed to study the propagation behavior of sound across the new phononic crystal of finite extent, and the influences of sample size and inclusion orientation on band gap characteristics are quantified in order to obtain the maximum band gap. For reference, the band gap behaviors of solid circular cylinder/air and hollow circular cylinder/air systems are considered and compared with those of semi-hollow circular cylinder/air systems. In addition to semi-hollow circular cylinders, other inclusion topologies such as semi-hollow triangular and square cylinders are also investigated. To validate the theoretical predictions, experimental measurements on square arrays of hollow Al cylinders in air and semi-hollow Al cylinders in air are carried out. The results demonstrate that the semi-hollow circular cylinder/air system has the best overall band gap performance.
Optical band gap tuning of Sb-Se thin films for xerographic based applications
Kaur, Ramandeep; Singh, Palwinder; Singh, Kulwinder; Kumar, Akshay; Thakur, Anup
2016-10-01
In the present paper we have studied the effect of Sb addition on the optical band gap tuning of thermally evaporated SbxSe100-x (x = 0, 5, 20, 50 and 60) thin films. The structural investigations revealed that all thin films were amorphous in nature. Transmission spectrum was taken in the range 400-2500 nm shows that all films are highly transparent in the near infrared region. The fundamental absorption edge shifts towards longer wavelength with Sb incorporation. The optical band gap decreases with addition of antimony in a-Se thin films. A good correlation has been drawn between experimentally estimated and theoretically calculated optical band gap. The decrease in optical band gap of thin films has been explained using chemical bond approach and density of states model. Decrease in optical band gap with Sb addition increases the concentration of electron deep traps which increases the X-ray sensitivity of Sb-Se thin films. Thus by tuning the optical band gap of Sb-Se alloy, it could be utilized for xerographic based applications.
The Miscibility of PCBM in Low Band-Gap Conjugated Polymers in Organic Photovoltaics
Chen, Huipeng; You, Wei; Peet, Jeff; Azoulay, Jason; Bazan, Guillermo; Dadmun, Mark
2012-02-01
Understanding the morphology of the photoactive layer in organic photovoltaics (OPVs) is essential to optimizing conjugated polymer-based solar cells to meet the targeted efficiency of 10%. The miscibility and interdiffusion of components are among the key elements that impact the development of morphology and structure in OPV active layers. This study uses neutron reflectivity to correlate the structure of low band gap polymers to their miscibility with PCBM. Several low band gap polymers that exhibit power conversion efficiencies exceeding 7%, including PBnDT-DTffBT were examined. The intermixing of low band-gap polymer and PCBM bilayers was monitored by neutron reflectivity before and after thermal annealing, providing quantification of the miscibility and interdiffusion of PCBM within the low band gap polymer layer. These results indicate that the miscibility of PCBM ranges from 3% to 26% with the low band-gap polymers studied. The correlation between low band gap polymer structure and miscibility of PCBM will also be discussed.
Interface orbital engineering of large-gap topological states: Decorating gold on a Si(111) surface
Huang, Bing; Jin, Kyung-Hwan; Zhuang, Houlong L.; Zhang, Lizhi; Liu, Feng
2016-03-01
Intensive effort has recently been made in search of topological insulators (TIs) that have great potential in spintronics applications. In this paper, a novel concept of overlayer induced interfacial TI phase in conventional semiconductor surface is proposed. The first-principles calculations demonstrate that a p -band-element X (X =In , Bi, and Pb) decorated d -band surface, such as Au/Si(111) surface [X /Au/Si(111)] of an existing experimental system, offers a promising prototype for TIs. Specifically, Bi/Au/Si(111) and Pb/Au/Si(111) are identified to be large-gap TIs. A p -d band inversion mechanism induced by growth of X in the Au/Si(111) surface is revealed to function at different coverage of X with different lattice symmetries, suggesting a general approach of interface orbital engineering of large-gap TIs via tuning the interfacial atomic orbital position of X relative to Au.
Band gap design of graphene photocathode%石墨烯光阴极带隙设计
Institute of Scientific and Technical Information of China (English)
李世龙; 石峰; 张太民; 刘照路; 张番; 李丹; 任兆玉
2015-01-01
In order to achieve graphene photocathode photoelectric conversion function, hexagonal boron nitride was doped in graphene in the form of hybrid superlattices nanoribbons. As can be seen from the band structure which was obtained by applying first-principles methods, the band gap of the superlattices was effectively regulated in a wide range (0-2.5 eV) by this means. The mechanism of band gap regulation was analyzed by the energy band structure and the charge density distribution. Furthermore, the present results were coincidence with the conclusion of Kronig-Penney model. With the increase of the h-BN proportion, the band gap engineering of graphene materials in this way, the band gap increases both zigzag edges superlattices nanoribbons and armchair edges superlattices nanoribbons. Besides, the band gap is almost independent of the width of nanoribbons, thus the size of the material can be more miniaturized. Moreover, the graphene photocathode with the gradient band gap characteristic can be made based on this approach, it can respond to different spectral ranges.%为了使石墨烯光阴极实现光电转化功能,以超晶格形式掺杂六角氮化硼到石墨烯中,形成杂化纳米带.通过基于第一性原理的计算,从能带结构可以看出,这种方法可以在一个很大的范围内(0~2.5 eV)调控带隙大小.结合能带结构和电荷密度分布分析了带隙调控的机理,此外,运用K-P模型理论分析也得到了一致的结果.以这种方式调控石墨烯材料的带隙,锯齿型边缘和扶手椅型边缘的六角氮化硼/石墨烯(h-BN/graphene)超晶格纳米带,其带隙大小均随着其中h-BN所占比例的增加而变大,而且其带隙大小几乎不受纳米带宽度的影响,这样一来材料的尺寸可以做到更加微型化.再者,基于此方法可以制成渐变带隙结构,进而实现同一光阴极对不同范围光谱的响应.
Analysis of photonic band-gap (PBG) structures using the FDTD method
DEFF Research Database (Denmark)
Tong, M.S.; Cheng, M.; Lu, Y.L.
2004-01-01
In this paper, a number of photonic band-gap (PBG) structures, which are formed by periodic circuit elements printed oil transmission-line circuits, are studied by using a well-known numerical method, the finite-difference time-domain (FDTD) method. The results validate the band-stop filter...
DEFF Research Database (Denmark)
Gorczyca, I.; Kamińska, A.; Staszczak, G.;
2010-01-01
The pressure-induced changes in the electronic band structures of In-containing nitride alloys, InxGa1-xN and InxAl1-xN are examined experimentally as well as by ab initio calculations. It is found that the band gap pressure coefficients, dEg/dp, exhibit very large bowing with x, and calculations...
Incomplete photonic band gap as inferred from the speckle pattern of scattered light waves.
Apalkov, V M; Raikh, M E; Shapiro, B
2004-06-25
Motivated by recent experiments on intensity correlations of the waves transmitted through disordered media, we demonstrate that the speckle pattern from disordered photonic crystal with incomplete band gap represents a sensitive tool for determination of the stop-band width. We establish the quantitative relation between this width and the angular anisotropy of the intensity correlation function.
Design Analysis of An Electromagnetic Band Gap Microstrip Antenna
Directory of Open Access Journals (Sweden)
M. S. Alam
2011-01-01
Full Text Available Problem statement: Wideband compact antenna is highly demandable due to the dynamic development in the wireless technology. Approach: A simple, compact EBG microstrip antenna is proposed in this study that covers a wideband of 250 GHz and the design is conformal with the 2.45 GHz ISM band (WLAN, IEEE 802.11b and g/Bluetooth/RFID applications. Results: A 6×6 array of square unit cell formed the EBG structure which is incorporated with the radiating patch to enhance the antenna performances. This design achieved an impedance bandwidth of 10.14% (2.34-2.59 GHz at -10 dB return loss and VSWR ≤ 2. Simulated radiation pattern is almost omnideirectional. Conclusion/Recommendations: The simulated results prove the compatibility of the EBG antenna with the 2.45 GHz ISM band applications. Further enhancement of the antenna performance with improved design is under consideration.
Band gap tunability of magneto-elastic phononic crystal
Bou Matar, O.; Robillard, J. F.; Vasseur, J. O.; Hladky-Hennion, A.-C.; Deymier, P. A.; Pernod, P.; Preobrazhensky, V.
2012-03-01
The possibility of control and tuning of the band structures of phononic crystals offered by the introduction of an active magnetoelastic material and the application of an external magnetic field is studied. Two means to obtain large elastic properties variations in magnetoelastic material are considered: Giant magnetostriction and spin reorientation transition effects. A plane wave expansion method is used to calculate the band structures. The magnetoelastic coupling is taken into account through the consideration of an equivalent piezomagnetic material model with elastic, piezomagnetic, and magnetic permeability tensors varying as a function of the amplitude and orientation of the applied magnetic field. Results of contactless tunability of the absolute bandgap are presented for a two-dimensional phononic crystal constituted of Terfenol-D square rod embedded in an epoxy matrix.
Pressure dependence of the band-gap energy in BiTeI
Güler-Kılıç, Sümeyra; Kılıç, Çetin
2016-01-01
The evolution of the electronic structure of BiTeI, a layered semiconductor with a van der Waals gap, under compression is studied by employing semilocal and dispersion-corrected density-functional calculations. Comparative analysis of the results of these calculations shows that the band-gap energy of BiTeI decreases till it attains a minimum value of zero at a critical pressure, after which it increases again. The critical pressure corresponding to the closure of the band gap is calculated,...
Robust band gap and half-metallicity in graphene with triangular perforations
Gregersen, Søren Schou; Power, Stephen R.; Jauho, Antti-Pekka
2016-06-01
Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., EG≃500 meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder. The inclusion of spin polarization within a mean-field Hubbard approach gives rise to a large overall magnetic moment at each antidot due to the sublattice imbalance imposed by the triangular geometry. Half-metallic behavior arises from the formation of spin-split dispersive states near the Fermi energy, reducing the band gaps compared to the unpolarized case. This behavior is also found to be robust in the presence of disorder. Our results highlight the possibilities of using triangular perforations in graphene to open electronic band gaps in systems with experimentally realistic levels of disorder, and furthermore, of exploiting the strong spin dependence of the system for spintronic applications.
Synergistic effects on band gap-narrowing in titania by codoping from first-principles calculations
2010-01-01
The large intrinsic band gap in TiO2 has hindered severely its potential application for visible-light irradiation. In this study, we have used a passivated approach to modify the band edges of anatase-TiO2 by codoping of X (N, C) with transition metals (TM=W, Re, Os) to extend the absorption edge to longer visible-light wavelengths. It was found that all the codoped systems can narrow the band gap significantly; in particular, (N+W)-codoped systems could serve as remarkably better photocatal...
Band Gap and Waveguide States in Two-Dimensional Disorder Phononic Crystals
Institute of Scientific and Technical Information of China (English)
LI Xiao-Chun; LIU Zheng-You; LIANG Hong-Yu; XIAO Qing-Wu
2006-01-01
@@ The influences of the configurational disorders on phononic band gaps and on waveguide modes are investigated for the two-dimensional phononic crystals consisting of water cylinders periodically arrayed in mercury. Two types of conflgurational disorders, relevant to the cylinder position and cylinder size respectively, are taken into account. It is found that the phononic band gap and the guide band are sensitive to the disorders, and generally become narrower with the increasing disorders. It is also found that the waveguide side walls without disorder can significantly prevent the guide modes in the waveguide from influence by the disorders in the crystals to a large amount.
Band-gap narrowing in the space-charge region of heavily doped silicon diodes
Lowney, Jeremiah R.
1985-02-01
The densities of states of the valence and conduction bands have been calculated in the space-charge region of a heavily doped linearly graded p- n junction silicon diode. Both the donor and acceptor densities were chosen to be equal to 6.2 × 10 18 cm -3. The results showed the emergence of band tails which penetrated deeply into the energy gap and accounted for the band-gap narrowing observed in such a diode by analysis of capacitance vs voltage measurements of the built-in voltage.
Band gap of two-dimensional fiber-air photonic crystals
Energy Technology Data Exchange (ETDEWEB)
Yang, Shu, E-mail: yangshu5678@163.com; Li, Masha
2016-04-15
A two-dimensional photonic crystal (PC) composed of textile fiber and air is initially discussed in this paper. Textile materials are so called soft materials, which are different from the previous PCs composed of rigid materials. The plain wave expansion method is used to calculate band structure of different PCs by altering component properties or structural parameters. Results show that the dielectric constant of textile fibers, fiber filling ratio and lattice arrangement are effective factors which influence PCs' band gap. Yet lattice constant and fiber diameter make inconspicuous influence on the band gap feature.
Ansari, Sajid Ali; Khan, Mohammad Mansoob; Kalathil, Shafeer; Nisar, Ambreen; Lee, Jintae; Cho, Moo Hwan
2013-10-07
Band gap narrowing is important and advantageous for potential visible light photocatalytic applications involving metal oxide nanostructures. This paper reports a simple biogenic approach for the promotion of oxygen vacancies in pure zinc oxide (p-ZnO) nanostructures using an electrochemically active biofilm (EAB), which is different from traditional techniques for narrowing the band gap of nanomaterials. The novel protocol improved the visible photocatalytic activity of modified ZnO (m-ZnO) nanostructures through the promotion of oxygen vacancies, which resulted in band gap narrowing of the ZnO nanostructure (Eg = 3.05 eV) without dopants. X-ray diffraction, UV-visible diffuse reflectance spectroscopy, X-ray photoelectron spectroscopy, electron paramagnetic resonance spectroscopy, Raman spectroscopy, photoluminescence spectroscopy and high resolution transmission electron microscopy confirmed the oxygen vacancy and band gap narrowing of m-ZnO. m-ZnO enhanced the visible light catalytic activity for the degradation of different classes of dyes and 4-nitrophenol compared to p-ZnO, which confirmed the band gap narrowing because of oxygen defects. This study shed light on the modification of metal oxide nanostructures by EAB with a controlled band structure.
Modifying the band gap and optical properties of Germanium nanowires by surface termination
Legesse, Merid; Fagas, Giorgos; Nolan, Michael
2017-02-01
Semiconductor nanowires, based on silicon (Si) or germanium (Ge) are leading candidates for many ICT applications, including next generation transistors, optoelectronics, gas and biosensing and photovoltaics. Key to these applications is the possibility to tune the band gap by changing the diameter of the nanowire. Ge nanowires of different diameter have been studied with H termination, but, using ideas from chemistry, changing the surface terminating group can be used to modulate the band gap. In this paper we apply the generalised gradient approximation of density functional theory (GGA-DFT) and hybrid DFT to study the effect of diameter and surface termination using -H, -NH2 and -OH groups on the band gap of (001), (110) and (111) oriented germanium nanowires. We show that the surface terminating group allows both the magnitude and the nature of the band gap to be changed. We further show that the absorption edge shifts to longer wavelength with the -NH2 and -OH terminations compared to the -H termination and we trace the origin of this effect to valence band modifications upon modifying the nanowire with -NH2 or -OH. These results show that it is possible to tune the band gap of small diameter Ge nanowires over a range of ca. 1.1 eV by simple surface chemistry.
Low frequency band gaps below 10 Hz in radial flexible elastic metamaterial plate
Gao, Nansha; Hou, Hong; Wu, Jiu Hui; Cheng, Baozhu
2016-11-01
This paper presents the low frequency acoustic properties of a new proposed elastic metamaterial, which is arranged in the axial coordinate. The band structures, transmission spectra, and eigenmode displacement fields of this metamaterial are different from previous elastic metamaterial structures. Numerical calculation results show that the first order band gap of the radial flexible elastic metamaterial plate is below 10 Hz. A multiple-vibration coupling mechanism is proposed to explain the low frequency band gaps. By changing the geometrical dimensions h 1, h 2, b 1, and b 1 of the centre part, the location and width of the low frequency band gaps can be varied easily. The effects of density and Young’s modulus are also discussed in detail. In summary, the radial flexible elastic metamaterial plate can restrain low frequency vibration, owing to which it can potentially be used to protect infrasound, generate filters, and design acoustic devices.
Fabrication of 3-D Photonic Band Gap Crystals Via Colloidal Self-Assembly
Subramaniam, Girija; Blank, Shannon
2005-01-01
The behavior of photons in a Photonic Crystals, PCs, is like that of electrons in a semiconductor in that, it prohibits light propagation over a band of frequencies, called Photonic Band Gap, PBG. Photons cannot exist in these band gaps like the forbidden bands of electrons. Thus, PCs lend themselves as potential candidates for devices based on the gap phenomenon. The popular research on PCs stem from their ability to confine light with minimal losses. Large scale 3-D PCs with a PBG in the visible or near infra red region will make optical transistors and sharp bent optical fibers. Efforts are directed to use PCs for information processing and it is not long before we can have optical integrated circuits in the place of electronic ones.
Kong, Lingping; Liu, Gang; Gong, Jue; Hu, Qingyang; Schaller, Richard D; Dera, Przemyslaw; Zhang, Dongzhou; Liu, Zhenxian; Yang, Wenge; Zhu, Kai; Tang, Yuzhao; Wang, Chuanyi; Wei, Su-Huai; Xu, Tao; Mao, Ho-Kwang
2016-08-09
The organic-inorganic hybrid lead trihalide perovskites have been emerging as the most attractive photovoltaic materials. As regulated by Shockley-Queisser theory, a formidable materials science challenge for improvement to the next level requires further band-gap narrowing for broader absorption in solar spectrum, while retaining or even synergistically prolonging the carrier lifetime, a critical factor responsible for attaining the near-band-gap photovoltage. Herein, by applying controllable hydrostatic pressure, we have achieved unprecedented simultaneous enhancement in both band-gap narrowing and carrier-lifetime prolongation (up to 70% to ∼100% increase) under mild pressures at ∼0.3 GPa. The pressure-induced modulation on pure hybrid perovskites without introducing any adverse chemical or thermal effect clearly demonstrates the importance of band edges on the photon-electron interaction and maps a pioneering route toward a further increase in their photovoltaic performance.
Kong, Lingping; Liu, Gang; Gong, Jue; Hu, Qingyang; Schaller, Richard D.; Dera, Przemyslaw; Zhang, Dongzhou; Liu, Zhenxian; Yang, Wenge; Zhu, Kai; Tang, Yuzhao; Wang, Chuanyi; Wei, Su-Huai; Xu, Tao; Mao, Ho-kwang
2016-01-01
The organic–inorganic hybrid lead trihalide perovskites have been emerging as the most attractive photovoltaic materials. As regulated by Shockley–Queisser theory, a formidable materials science challenge for improvement to the next level requires further band-gap narrowing for broader absorption in solar spectrum, while retaining or even synergistically prolonging the carrier lifetime, a critical factor responsible for attaining the near-band-gap photovoltage. Herein, by applying controllable hydrostatic pressure, we have achieved unprecedented simultaneous enhancement in both band-gap narrowing and carrier-lifetime prolongation (up to 70% to ∼100% increase) under mild pressures at ∼0.3 GPa. The pressure-induced modulation on pure hybrid perovskites without introducing any adverse chemical or thermal effect clearly demonstrates the importance of band edges on the photon–electron interaction and maps a pioneering route toward a further increase in their photovoltaic performance. PMID:27444014
Energy Technology Data Exchange (ETDEWEB)
Kong, Lingping; Liu, Gang; Gong, Jue; Hu, Qingyang; Schaller, Richard D.; Dera, Przemyslaw; Zhang, Dongzhou; Liu, Zhenxian; Yang, Wenge; Zhu, Kai; Tang, Yuzhao; Wang, Chuanyi; Wei, Su-Huai; Xu, Tao; Mao, Ho-kwang
2016-07-21
The organic-inorganic hybrid lead trihalide perovskites have been emerging as the most attractive photovoltaic materials. As regulated by Shockley-Queisser theory, a formidable materials science challenge for improvement to the next level requires further band-gap narrowing for broader absorption in solar spectrum, while retaining or even synergistically prolonging the carrier lifetime, a critical factor responsible for attaining the near-band-gap photovoltage. Herein, by applying controllable hydrostatic pressure, we have achieved unprecedented simultaneous enhancement in both band-gap narrowing and carrier-lifetime prolongation (up to 70% to -100% increase) under mild pressures at -0.3 GPa. The pressure-induced modulation on pure hybrid perovskites without introducing any adverse chemical or thermal effect clearly demonstrates the importance of band edges on the photon-electron interaction and maps a pioneering route toward a further increase in their photovoltaic performance.
Pressure dependence of the band-gap energy in BiTeI
Güler-Kılıç, Sümeyra; Kılıç, ćetin
2016-10-01
The evolution of the electronic structure of BiTeI, a layered semiconductor with a van der Waals gap, under compression is studied by employing semilocal and dispersion-corrected density-functional calculations. Comparative analysis of the results of these calculations shows that the band-gap energy of BiTeI decreases till it attains a minimum value of zero at a critical pressure, after which it increases again. The critical pressure corresponding to the closure of the band gap is calculated, at which BiTeI becomes a topological insulator. Comparison of the critical pressure to the pressure at which BiTeI undergoes a structural phase transition indicates that the closure of the band gap would not be hindered by a structural transformation. Moreover, the band-gap pressure coefficients of BiTeI are computed, and an expression of the critical pressure is devised in terms of these coefficients. Our findings indicate that the semilocal and dispersion-corrected approaches are in conflict about the compressibility of BiTeI, which result in overestimation and underestimation, respectively. Nevertheless, the effect of pressure on the atomic structure of BiTeI is found to be manifested primarily as the reduction of the width of the van der Waals gap according to both approaches, which also yield consistent predictions concerning the interlayer metallic bonding in BiTeI under compression. It is consequently shown that the calculated band-gap energies follow qualitatively and quantitatively the same trend within the two approximations employed here, and the transition to the zero-gap state occurs at the same critical width of the van der Waals gap.
Strain-Induced Energy Band Gap Opening in Two-Dimensional Bilayered Silicon Film
Ji, Z.; Zhou, R.; Lew Yan Voon, L. C.; Zhuang, Y.
2016-10-01
This work presents a theoretical study of the structural and electronic properties of bilayered silicon film (BiSF) under in-plane biaxial strain/stress using density functional theory (DFT). Atomic structures of the two-dimensional (2-D) silicon films are optimized by using both the local-density approximation (LDA) and generalized gradient approximation (GGA). In the absence of strain/stress, five buckled hexagonal honeycomb structures of the BiSF with triangular lattice have been obtained as local energy minima, and their structural stability has been verified. These structures present a Dirac-cone shaped energy band diagram with zero energy band gaps. Applying a tensile biaxial strain leads to a reduction of the buckling height. Atomically flat structures with zero buckling height have been observed when the AA-stacking structures are under a critical biaxial strain. Increase of the strain between 10.7% and 15.4% results in a band-gap opening with a maximum energy band gap opening of ˜0.17 eV, obtained when a 14.3% strain is applied. Energy band diagrams, electron transmission efficiency, and the charge transport property are calculated. Additionally, an asymmetric energetically favorable atomic structure of BiSF shows a non-zero band gap in the absence of strain/stress and a maximum band gap of 0.15 eV as a -1.71% compressive strain is applied. Both tensile and compressive strain/stress can lead to a band gap opening in the asymmetric structure.
k.p theory of freestanding narrow band gap semiconductor nanowires
Luo, Ning; Liao, Gaohua; Xu, H. Q.
2016-12-01
We report on a theoretical study of the electronic structures of freestanding nanowires made from narrow band gap semiconductors GaSb, InSb and InAs. The nanowires are described by the eight-band k.p Hamiltonians and the band structures are computed by means of the finite element method in a mixture basis consisting of linear triangular elements inside the nanowires and constrained Hermite triangular elements near the boundaries. The nanowires with two crystallographic orientations, namely the [001] and [111] orientations, and with different cross-sectional shapes are considered. For each orientation, the nanowires of the three narrow band gap semiconductors are found to show qualitatively similar characteristics in the band structures. However, the nanowires oriented along the two different crystallographic directions are found to show different characteristics in the valence bands. In particular, it is found that all the conduction bands show simple, good parabolic dispersions in both the [001]- and [111]-oriented nanowires, while the top valence bands show double-maximum structures in the [001]-oriented nanowires, but single-maximum structures in the [111]-oriented nanowires. The wave functions and spinor distributions of the band states in these nanowires are also calculated. It is found that significant mixtures of electron and hole states appear in the bands of these narrow band gap semiconductor nanowires. The wave functions exhibit very different distribution patterns in the nanowires oriented along the [001] direction and the nanowires oriented along the [111] direction. It is also shown that single-band effective mass theory could not reproduce all the band state wave functions presented in this work.
Acoustic band gaps of the woodpile sonic crystal with the simple cubic lattice
Energy Technology Data Exchange (ETDEWEB)
Wu, Liang-Yu; Chen, Lien-Wen, E-mail: chenlw@mail.ncku.edu.t [Department of Mechanical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)
2011-02-02
This study theoretically and experimentally investigates the acoustic band gap of a three-dimensional woodpile sonic crystal. Such crystals are built by blocks or rods that are orthogonally stacked together. The adjacent layers are perpendicular to each other. The woodpile structure is embedded in air background. Their band structures and transmission spectra are calculated using the finite element method with a periodic boundary condition. The dependence of the band gap on the width of the stacked rods is discussed. The deaf bands in the band structure are observed by comparing with the calculated transmission spectra. The experimental transmission spectra for the {Gamma}-X and {Gamma}-X' directions are also presented. The calculated results are compared with the experimental results.
Sangiorgi, Nicola; Aversa, Lucrezia; Tatti, Roberta; Verucchi, Roberto; Sanson, Alessandra
2017-02-01
The optical band gap energy and the electronic processes involved are important parameters of a semiconductor material and it is therefore important to determine their correct values. Among the possible methods, the spectrophotometric is one of the most common. Several methods can be applied to determine the optical band gap energy and still now a defined consensus on the most suitable one has not been established. A highly diffused and accurate optical method is based on Tauc relationship, however to apply this equation is necessary to know the nature of the electronic transitions involved commonly related to the coefficient n. For this purpose, a spectrophotometric technique was used and we developed a graphical method for electronic transitions and band gap energy determination for samples in powder form. In particular, the n coefficient of Tauc equation was determined thorough mathematical elaboration of experimental results on TiO2 (anatase), ZnO, and SnO2. The results were used to calculate the band gap energy values and then compared with the information obtained by Ultraviolet Photoelectron Spectroscopy (UPS). This approach provides a quick and accurate method for band gap determination through n coefficient calculation. Moreover, this simple but reliable method can be used to evaluate the nature of electronic transition that occurs in a semiconductor material in powder form.
Direct band gap silicon crystals predicted by an inverse design method
Oh, Young Jun; Lee, In-Ho; Lee, Jooyoung; Kim, Sunghyun; Chang, Kee Joo
2015-03-01
Cubic diamond silicon has an indirect band gap and does not absorb or emit light as efficiently as other semiconductors with direct band gaps. Thus, searching for Si crystals with direct band gaps around 1.3 eV is important to realize efficient thin-film solar cells. In this work, we report various crystalline silicon allotropes with direct and quasi-direct band gaps, which are predicted by the inverse design method which combines a conformation space annealing algorithm for global optimization and first-principles density functional calculations. The predicted allotropes exhibit energies less than 0.3 eV per atom and good lattice matches, compared with the diamond structure. The structural stability is examined by performing finite-temperature ab initio molecular dynamics simulations and calculating the phonon spectra. The absorption spectra are obtained by solving the Bethe-Salpeter equation together with the quasiparticle G0W0 approximation. For several allotropes with the band gaps around 1 eV, photovoltaic efficiencies are comparable to those of best-known photovoltaic absorbers such as CuInSe2. This work is supported by the National Research Foundation of Korea (2005-0093845 and 2008-0061987), Samsung Science and Technology Foundation (SSTF-BA1401-08), KIAS Center for Advanced Computation, and KISTI (KSC-2013-C2-040).
Band-gap control in phosphorene/BN structures from first-principles calculations
Marsoner Steinkasserer, Lukas Eugen; Suhr, Simon; Paulus, Beate
2016-09-01
Using both DFT as well as G0W0 calculations, we investigate static and dynamic effects on the phosphorene band gap upon deposition and encapsulation on/in BN multilayers. We demonstrate how competing long- and short-range effects cause the phosphorene band gap to increase at low P -BN interlayer spacings, while the band gap is found to drop below that of isolated phosphorene in the BN/P bilayer at intermediate distances around 4 Å. Subsequent stacking of BN layers, i.e., BN/BN/P and BN/BN/BN/P is found to have a negligible effect at the DFT level while at the G0W0 level, increased screening lowers the band gap as compared to the BN/P bilayer. Encapsulation between two BN layers, on the other hand, is found to further increase the phosphorene band gap with respect to the BN/P bilayer. Lastly we investigate the use of the GLLB-SC functional as a starting point for G0W0 calculations showing it to, in the case of phosphorene, yield results close to those obtained from G W0@P B E .
The band gap of II-Vi ternary alloys in a tight-binding description
Energy Technology Data Exchange (ETDEWEB)
Olguin, Daniel; Blanquero, Rafael [Instituto Politecnico Nacional, Mexico, D.F (Mexico); De Coss, Romeo [Instituto Politecnico Nacional, Yucatan (Mexico)
2001-02-01
We present tight-binding calculations for the band gap of II-Vi pseudobinary ternary alloys. We use an sp{sup 3} s* tight-binding Hamiltonian which include spin-orbit coupling. The band gap composition dependence is calculated using a extended version of the virtual crystal approximation, which introduce an empirical correction factor that takes into account the non-linear dependence of the band gap with the composition. The results compare quite well with the experimental data, both for the ternary alloys with wide band gap and for the narrow band gap ones. [Spanish] Presentamos el calculo de la banda de energia prohibida de aleaciones ternarias de compuestos II-VI. El calculo, que incluye interaccion espin-orbita, se hace con el metodo de enlace fuerte, utilizando una base ortogonal de cinco orbitales atomicos por atomo (sp{sup 3} s*), en conjunto con la aproximacion del cristal virtual. En la aproximacion del cristal virtual, incluimos un factor de correccion que toma en cuenta la no linealidad de la banda de energia prohibida como funcion de la concentracion. Con esta correccion nuestros resultados reproducen aceptablemente los datos experimentales hallados en la literatura.
Low band gap frequencies and multiplexing properties in 1D and 2D mass spring structures
Aly, Arafa H.; Mehaney, Ahmed
2016-11-01
This study reports on the propagation of elastic waves in 1D and 2D mass spring structures. An analytical and computation model is presented for the 1D and 2D mass spring systems with different examples. An enhancement in the band gap values was obtained by modeling the structures to obtain low frequency band gaps at small dimensions. Additionally, the evolution of the band gap as a function of mass value is discussed. Special attention is devoted to the local resonance property in frequency ranges within the gaps in the band structure for the corresponding infinite periodic lattice in the 1D and 2D mass spring system. A linear defect formed of a row of specific masses produces an elastic waveguide that transmits at the narrow pass band frequency. The frequency of the waveguides can be selected by adjusting the mass and stiffness coefficients of the materials constituting the waveguide. Moreover, we pay more attention to analyze the wave multiplexer and DE-multiplexer in the 2D mass spring system. We show that two of these tunable waveguides with alternating materials can be employed to filter and separate specific frequencies from a broad band input signal. The presented simulation data is validated through comparison with the published research, and can be extended in the development of resonators and MEMS verification.
Microscopic theoretical model study of band gap opening in AA-stacked bi-layer graphene
Sahu, Sivabrata; Parashar, S. K. S.; Rout, G. C.
2016-05-01
We address here a tight-binding theoretical model calculation for AA-stacked bi-layer graphene taking into account of a biased potential between two layers to study the density of states and the band dispersion within the total Brillouin zone. We have calculated the electronic Green's function for electron operator corresponding to A and B sub lattices by Zubarev's Green's function technique from which the electronic density of states and the electron band energy dispersion are calculated. The numerically computed density of states and band energy dispersions are investigated by tuning the biased potential to exhibit the band gap by varying the different physical parameters.
Indian Academy of Sciences (India)
NRIPASREE NARAYANAN; N K DEEPAK
2016-12-01
In the present study, we investigated the effect of vacuum annealing on the structural and optical properties of sol–gel dip-coated thin films of Zn$_{0.75}$Mg$_{0.25}$O alloy. XRD studies revealed that all these films werepolycrystalline with hexagonal wurtzite structure and there was no trace of additional phases other than ZnO.With increase in annealing temperature, the samples showed preferred orientation along the c-axis, (0 0 2) plane andalso peak narrowing and peak shift towards higher angles. The calculated values of mean crystallite size increased with annealing temperature indicating the improvement in crystallinity. Heat treatment caused lattice contractionand a decrease in film thickness. The optical transmittance in the visible spectral range enhanced with increase in annealing temperature while the fundamental absorption edge in the near ultra-violet region got red-shifted with annealing. The calculated values of optical energy gap of the samples showed a decrease with heat treatment due to the improvement in crystallinity during annealing and hence the subsequent decrease in quantum size effect.
Quantum speedup of an atom coupled to a photonic-band-gap reservoir
Wu, Yu-Nan; Wang, Jing; Zhang, Han-Zhuang
2017-01-01
For a model of an atom embedded in a photonic-band-gap reservoir, it was found that the speedup of quantum evolution is subject to the atomic frequency changes. In this work, we propose different points of view on speeding up the evolution. We show that the atomic embedded position, the width of the band gap and the defect mode also play an important role in accelerating the evolution. By changing the embedded position of the atom and the coupling strength with the defect mode, the speedup region lies even outside the band-gap region, where the non-Markovian effect is weak. The mechanism for the speedup is due to the interplay of atomic excited population and the non-Markovianity. The feasible experimental system composed of quantum dots in the photonic crystal is discussed. These results provide new degree of freedoms to depress the quantum speed limit time in photonic crystals.
Synthesis of copper quantum dots by chemical reduction method and tailoring of its band gap
Directory of Open Access Journals (Sweden)
P. G. Prabhash
2016-05-01
Full Text Available Metallic copper nano particles are synthesized with citric acid and CTAB (cetyltrimethylammonium bromide as surfactant and chlorides as precursors. The particle size and surface morphology are analyzed by High Resolution Transmission Electron Microscopy. The average size of the nano particle is found to be 3 - 10 nm. The optical absorption characteristics are done by UV-Visible spectrophotometer. From the Tauc plots, the energy band gaps are calculated and because of their smaller size the particles have much higher band gap than the bulk material. The energy band gap is changed from 3.67 eV to 4.27 eV in citric acid coated copper quantum dots and 4.17 eV to 4.52 eV in CTAB coated copper quantum dots.
Wavelet-based method for computing elastic band gaps of one-dimensional phononic crystals
Institute of Scientific and Technical Information of China (English)
YAN; ZhiZhong; WANG; YueSheng
2007-01-01
A wavelet-based method was developed to compute elastic band gaps of one-dimensional phononic crystals. The wave field was expanded in the wavelet basis and an equivalent eigenvalue problem was derived in a matrix form involving the adaptive computation of integrals of the wavelets. The method was then applied to a binary system. For comparison, the elastic band gaps of the same one-di- mensional phononic crystals computed with the wavelet method and the well- known plane wave expansion (PWE) method are both presented in this paper. The numerical results of the two methods are in good agreement while the computation costs of the wavelet method are much lower than that of PWE method. In addition, the adaptability of wavelets makes the method possible for efficient band gap computation of more complex phononic structures.
Institute of Scientific and Technical Information of China (English)
Guo Ji-Yong; Chen Hong; Li Hong-Qiang; Zhang Ye-Wen
2008-01-01
We take a finite dielectric photonic crystal as a homogeneous slab and have extracted the effective parameters. Our systematic study shows that the effective permittivity or permeability of dielectric photonic crystal is negative within a band gap region. This means that the band gap might act as ε-negative materials (ENMs) with ε0, or μ-negative materials (MNMs) with ε>0 and μ<0. Moreover the effective parameters sensitively rely on size, surface termination, symmetry, etc. The effective parameters can be used to design full transmission tunnelling modes and amplify evanescent wave. Several cases are studied and the results show that dielectric photonic band gap can indeed mimic a single negative material (ENM or MNM) under some restrictions.
Experimental Work With Photonic Band Gap Fiber: Building A Laser Electron Accelerator
Energy Technology Data Exchange (ETDEWEB)
Lincoln, Melissa; Ischebeck, Rasmus; Nobel, Robert; Siemann, Robert; /SLAC
2006-09-29
In the laser acceleration project E-163 at the Stanford Linear Accelerator Center, work is being done toward building a traveling wave accelerator that uses as its accelerating structure a length of photonic band gap fiber. The small scale of the optical fiber allows radiation at optical wavelengths to be used to provide the necessary accelerating energy. Optical wavelength driving energy in a small structure yields higher accelerating fields. The existence of a speed-of-light accelerating mode in a photonic band gap fiber has been calculated previously [1]. This paper presents an overview of several of the experimental challenges posed in the development of the proposed photonic band gap fiber accelerator system.
Band gap of β-PtO2 from first-principles
Directory of Open Access Journals (Sweden)
Yong Yang
2012-06-01
Full Text Available We studied the band gap of β-PtO2 using first-principles calculations based on density functional theory (DFT. The results are obtained within the framework of the generalized gradient approximation (GGA, GGA+U, GW, and the hybrid functional methods. For the different types of calculations, the calculated band gap increases from ∼0.46 eV to 1.80 eV. In particular, the band gap by GW (conventional and self-consistent calculation shows a tendency of converging to ∼1.25 ± 0.05 eV. The effect of on-site Coulomb interaction on the bonding characteristics is also analyzed.
All-optical ultrafast switching of Si woodpile photonic band gap crystals
Euser, T G; Fleming, J G; Gralak, B; Polman, Albert; Vos, W L; Euser, Tijmen G.; Molenaar, Adriaan J.; Gralak, Boris; Polman, Albert; Vos, Willem L.
2006-01-01
We present ultrafast all-optical switching measurements of Si woodpile photonic band gap crystals at telecom frequencies. The crystals are homogeneously excited by a two-photon process. We probe the switching by measuring reflectivity over broad frequency ranges as a function of time. At short delay times, we observe that the photonic gap becomes narrower than in the unswitched case. After 1 ps, the complete gap has shifted to higher frequencies. This intricate behavior is the result of competing refractive index changes due to the electronic Kerr effect and to optically excited free carriers. The frequency shift of the band gap as a function of pump intensity agrees well with Fourier modal method calculations with no freely adjustable parameters.
Acoustic band gaps in two-dimensional square arrays of semi-hollow circular cylinders
Institute of Scientific and Technical Information of China (English)
LU TianJian; GAO GuoQin; MA ShouLin; JIN Feng; T.Kim
2009-01-01
Concave surfaces focus sound while convex surfaces disperse sound. It is therefore interesting to know if it is possible to make use of these two opposite characteristics to enhance the band gap per-formance of periodic arrays of solid cylinders in air. In this paper, the band gap characteristics of a 2-D square array of semi-hollow circular cylinders embedded in air are investigated, both experimentally and theoretically. In comparison with the types of inclusion studied by previous researchers, a semi-hollow circular cylinder is unique in the sense that it has concave inner surfaces and convex outer surfaces. The finite difference time domain (FDTD) method is employed to study the propagation behavior of sound across the new phononic crystal of finite extent, and the influences of sample size and inclusion orientation on band gap characteristics are quantified in order to obtain the maximum band gap. For reference, the band gap behaviors of solid circular cylinder/air and hollow circular cyl-inder/air systems are considered and compared with those of semi-hollow circular cylinder/air systems. In addition to semi-hollow circular cylinders, other inclusion topologies such as semi-hollow triangular and square cylinders are also investigated. To validate the theoretical predictions, experimental meas-urements on square arrays of hollow AI cylinders in air and semi-hollow AI cylinders in air are carried out. The results demonstrate that the semi-hollow circular cylinder/air system has the best overall band gap performance.
An efficient method of DFT/LDA band-gap correction
Scharoch, Pawel; Winiarski, Maciej
2013-12-01
It has been shown that the underestimated by DFT/LDA(GGA) band-gap can be efficiently corrected by an averaging procedure of transition energies over a region close to the direct band-gap transition, which we call the Δ(EIG) method (the differences in the Kohn-Sham eigenvalues). For small excitations the averaging appears to be equivalent to the Δ(SCF) approach (differences in the self-consistent energies), which is a consequence of Janak’s theorem and has been confirmed numerically. The Gaussian distribution in k-space for electronic excitation has been used (occupation numbers in the Δ(SCF) or eigenenergy sampling in the Δ(EIG)). A systematic behavior of the k-space localization parameter σk correcting the band-gap has been observed in numerical experiments. On that basis some sampling schemes for band-gap correction have been proposed and tested in the prediction of the band-gap behavior in InxGa(1-x)N semiconducting alloy, and a very good agreement with independent calculations has been obtained. In the context of the work the issue of electron localization in the r-space has been discussed which, as it has been predicted by Mori-Sánchez et al. [P. Mori-Sánchez, A.J. Cohen, W. Yang, Phys. Rev. Lett. 100 (2008) 146401], should reduce the effect of the convex behavior of the LDA/GGA functionals and improve the band-gap prediction within DFT/LDA(GGA). A scheme for electron localization in r-space has been suggested.
Band gap and conductivity variations of ZnO thin films by doping with Aluminium
Vattappalam, Sunil C.; Thomas, Deepu; T, Raju Mathew; Augustine, Simon; Mathew, Sunny
2015-02-01
Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). Aluminium was doped for different doping concentrations from 3 at.% to 12 at.% in steps of 3 at.%. Conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. It was observed that as the doping concentration of Aluminium increases, the band gap of the samples decreases and concequently conductivity of the samples increases.
Band gap and conductivity variations of ZnO nano structured thin films annealed under Vacuum
Vattappalam, Sunil C.; Thomas, Deepu; T, Raju Mathew; Augustine, Simon; Mathew, Sunny
2015-02-01
Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). The samples were annealed under vacuum and conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. All the results were compared with that of the sample annealed under air. It was observed that the band gap decreases and concequently conductivity of the samples increases when the samples are annealed under vacuum.
Lattice reconfiguration and phononic band-gap adaptation via origami folding
Thota, M.; Li, S.; Wang, K. W.
2017-02-01
We introduce a framework of utilizing origami folding to redistribute the inclusions of a phononic structure to achieve significant phononic band-gap adaptation. Cylindrical inclusions are attached to the vertices of a Miura-Ori sheet, whose 1 degree-of-freedom rigid folding can enable fundamental reconfigurations in the underlying periodic architecture via switching between different Bravais lattice types. Such a reconfiguration can drastically change the wave propagation behavior in terms of band gap and provide a scalable and practical means for broadband wave tailoring.
Band Gap Narrowing and Widening of ZnO Nanostructures and Doped Materials
2015-01-01
Band gap change in doped ZnO is an observed phenomenon that is very interesting from the fundamental point of view. This work is focused on the preparation of pure and single phase nanostructured ZnO and Cu as well as Mn-doped ZnO for the purpose of understanding the mechanisms of band gap narrowing in the materials. ZnO, Zn0.99Cu0.01O and Zn0.99Mn0.01O materials were prepared using a wet chemistry method, and X-ray diffraction (XRD) results showed that all samples were pure and single phase....
Single-Crystal Semiconductors with Narrow Band Gaps for Solar Water Splitting.
Wang, Tuo; Gong, Jinlong
2015-09-07
Solar water splitting provides a clean and renewable approach to produce hydrogen energy. In recent years, single-crystal semiconductors such as Si and InP with narrow band gaps have demonstrated excellent performance to drive the half reactions of water splitting through visible light due to their suitable band gaps and low bulk recombination. This Minireview describes recent research advances that successfully overcome the primary obstacles in using these semiconductors as photoelectrodes, including photocorrosion, sluggish reaction kinetics, low photovoltage, and unfavorable planar substrate surface. Surface modification strategies, such as surface protection, cocatalyst loading, surface energetics tuning, and surface texturization are highlighted as the solutions.
Optical band gap of Sn0.2Bi1.8Te3 thin films
Indian Academy of Sciences (India)
P H Soni; M V Hathi; C F Desai
2003-12-01
Sn0.2Bi1.8Te3 thin films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500–4000 cm-1. From the optical absorption data the band gap was evaluated and studied as a function of film thickness and deposition temperature. The data indicate absorption through direct interband transition with a band gap of around 0.216 eV. The detailed results are reported here.
Enhanced third-harmonic generation in photonic crystals at band-gap pumping
Yurchenko, Stanislav O.; Zaytsev, Kirill I.; Gorbunov, Evgeny A.; Yakovlev, Egor V.; Zotov, Arsen K.; Masalov, Vladimir M.; Emelchenko, Gennadi A.; Gorelik, Vladimir S.
2017-02-01
More than one order enhancement of third-harmonic generation is observed experimentally at band-gap pumping of globular photonic crystals. Due to a lateral modulation of the dielectric permittivity in two- and three-dimensional photonic crystals, sharp peaks of light intensity (light localization) arise in the media at the band-gap pumping. The light localization enhances significantly the nonlinear light conversion, in particular, third-harmonic generation, in the near-surface volume of photonic crystal. The observed way to enhance the nonlinear conversion can be useful for creation of novel compact elements of nonlinear and laser optics.
Complete Band-Gap in Two-Dimensional Quasiperiod Photonic Crystals with Hollow Cylinders
Institute of Scientific and Technical Information of China (English)
FENG Zhi-Fang; FENG Shuai; REN Kun; LI Zhi-Yuan; CHENG Bing-Ying; ZHANG Dao-Zhong
2005-01-01
@@ The transmission properties of quasiperiodic photonic crystals (QPCs) based on the random square-triangle tilingsystem are investigated by the multiple scattering method. The hollow cylinders are introduced in our calculation. It is found that QPCs with hollow cylinders also possess a complete band gap common to s- and p-polarized waves when the inner radius of hollow cylinders is larger than a certain value. The QPCs possessing the complete band gap can be applied to the fields of light emitting, wave-guides, optical filters, high-Q resonators and antennas.
Empirical determination of the energy band gap narrowing in highly doped n+ silicon
Yan, Di; Cuevas, Andres
2013-07-01
Highly doped regions in silicon devices should be analyzed using Fermi-Dirac statistics, taking into account energy band gap narrowing (BGN). An empirical expression for the BGN as a function of dopant concentration is derived here by matching the modeled and measured thermal recombination current densities J0 of a broad range of n+ dopant concentration profiles prepared by phosphorus diffusion. The analysis is repeated with Boltzmann statistics in order to determine a second empirical expression for the apparent energy band gap narrowing, which is found to be in good agreement with previous work.
Crystal structure and band gap of AlGaAsN
Munich, D. P.; Pierret, R. F.
1987-09-01
Quantum dielectric theory is applied to the quaternary alloy Al xGa 1- xAs 1- yN y to predict its electronic properties as a function of Al and N mole fractions. Results are presented for the expected crystal structure, minimum electron energy band gap, and direction in k-space of the band gap minimum for all x and y values. The results suggest that, for a proper choice of x and y, Al xGa 1- xAs 1- yN y could exhibit certain advantages over Al xGa 1- xAs when utilized in field-effect transistor structures.
Huisman, Simon R; Woldering, Léon A; Leistikow, Merel D; Mosk, Allard P; Vos, Willem L
2010-01-01
We have studied the reflectivity of CMOS-compatible three-dimensional silicon inverse woodpile photonic crystals at near-infrared frequencies. Polarization-resolved reflectivity spectra were obtained from two orthogonal crystal surfaces corresponding to 1.88 pi sr solid angle. The spectra reveal broad peaks with high reflectivity up to 67 % that are independent of the spatial position on the crystals. The spectrally overlapping reflectivity peaks for all directions and polarizations form the signature of a broad photonic band gap with a relative bandwidth up to 16 %. This signature is supported with stopgaps in plane wave bandstructure calculations and with the frequency region of the expected band gap.
Semiconducting graphene nanoribbon retains band gap on amorphous or crystalline SiO_2
Hossain, M. Zubaer
2011-01-01
Electronic properties of a semiconducting armchair graphene nanoribbon on SiO_2 are examined using first-principles calculations and taking into account the van der Waals interaction. Unlike semiconducting carbon nanotubes, which exhibit variations in band gap on SiO_2, the nanoribbon is found to retain its band gap on SiO_2, regardless of the separation distance or the dielectric’s surface type—crystalline or amorphous. The interfacial interaction leads to electron-transfer from the nanor...
Diaz-Valencia, B. F.; Calero, J. M.
2017-02-01
In this work, we use the plane wave expansion method to calculate photonic band structures in two-dimensional photonic crystals which consist of high-temperature superconducting hollow rods arranged in a triangular lattice. The variation of the photonic band structure with respect to both, the inner radius and the system temperature, is studied, taking into account temperatures below the critical temperature of the superconductor in the low frequencies regime and assuming E polarization of the incident light. Permittivity contrast and nontrivial geometry of the hollow rods lead to the appearance of new band gaps as compared with the case of solid cylinders. Such band gaps can be modulated by means of the inner radius and system temperature.
The scaling of the effective band gaps in indium-arsenide quantum dots and wires.
Wang, Fudong; Yu, Heng; Jeong, Sohee; Pietryga, Jeffrey M; Hollingsworth, Jennifer A; Gibbons, Patrick C; Buhro, William E
2008-09-23
Colloidal InAs quantum wires having diameters in the range of 5-57 nm and narrow diameter distributions are grown from Bi nanoparticles by the solution-liquid-solid (SLS) mechanism. The diameter dependence of the effective band gaps (DeltaE(g)s) in the wires is determined from photoluminescence spectra and compared to the experimental results for InAs quantum dots and rods and to the predictions of various theoretical models. The DeltaE(g) values for InAs quantum dots and wires are found to scale linearly with inverse diameter (d(-1)), whereas the simplest confinement models predict that DeltaE(g) should scale with inverse-square diameter (d(-2)). The difference in the observed and predicted scaling dimension is attributed to conduction-band nonparabolicity induced by strong valence-band-conduction-band coupling in the narrow-gap InAs semiconductor.
Niedermeier, Christian A.; Råsander, Mikael; Rhode, Sneha; Kachkanov, Vyacheslav; Zou, Bin; Alford, Neil; Moram, Michelle A.
2016-08-01
Epitaxial transparent oxide NixMg1-xO (0 ≤ x ≤ 1) thin films were grown on MgO(100) substrates by pulsed laser deposition. High-resolution synchrotron X-ray diffraction and high-resolution transmission electron microscopy analysis indicate that the thin films are compositionally and structurally homogeneous, forming a completely miscible solid solution. Nevertheless, the composition dependence of the NixMg1-xO optical band gap shows a strong non-parabolic bowing with a discontinuity at dilute NiO concentrations of x band structure and the density of states demonstrate that deep Ni 3d levels are introduced into the MgO band gap, which significantly reduce the fundamental gap as confirmed by optical absorption spectra. These states broaden into a Ni 3d-derived conduction band for x > 0.074 and account for the anomalously large band gap narrowing in the NixMg1-xO solid solution system.
Local density of optical states in the band gap of a finite photonic crysta
Yeganegi, Elahe; Mosk, Allard P; Vos, Willem L
2014-01-01
We study the local density of states (LDOS) in a finite photonic crystal, in particular in the frequency range of the band gap. We propose a new point of view on the band gap, which we consider to be the result of vacuum fluctuations in free space that tunnel in the forbidden range in the crystal. As a result, we arrive at a model for the LDOS that is in two major items modified compared to the well-known expression for infinite crystals. Firstly, we modify the Dirac delta functions to become Lorentzians with a width set by the crystal size. Secondly, building on characterization of the fields versus frequency and position we calculated the fields in the band gap. We start from the fields at the band edges, interpolated in space and position, and incorporating the exponential damping in the band gap. We compare our proposed model to exact calculations in one dimension using the transfer matrix method and find very good agreement. Notably, we find that in finite crystals, the LDOS depends on frequency, on posi...
Mubeen, Syed; Hernandez-Sosa, Gerardo; Moses, Daniel; Lee, Joun; Moskovits, Martin
2011-12-14
A fruitful paradigm in the development of low-cost and efficient photovoltaics is to dope or otherwise photosensitize wide band gap semiconductors in order to improve their light harvesting ability for light with sub-band-gap photon energies.(1-8) Here, we report significant photosensitization of TiO2 due to the direct injection by quantum tunneling of hot electrons produced in the decay of localized surface-plasmon polaritons excited in gold nanoparticles (AuNPs) embedded in the semiconductor (TiO2). Surface plasmon decay produces electron-hole pairs in the gold.(9-15) We propose that a significant fraction of these electrons tunnel into the semiconductor's conduction band resulting in a significant electron current in the TiO2 even when the device is illuminated with light with photon energies well below the semiconductor's band gap. Devices fabricated with (nonpercolating) multilayers of AuNPs in a TiO2 film produced over 1000-fold increase in photoconductance when illuminated at 600 nm over what TiO2 films devoid of AuNPs produced. The overall current resulting from illumination with visible light is ∼50% of the device current measured with UV (ℏω>Eg band gap) illumination. The above observations suggest that plasmonic nanostructures (which can be fabricated with absorption properties that cover the full solar spectrum) can function as a viable alternative to organic photosensitizers for photovoltaic and photodetection applications.
Dipole-induced band-gap reduction in an inorganic cage.
Lv, Yaokang; Cheng, Jun; Steiner, Alexander; Gan, Lihua; Wright, Dominic S
2014-02-10
Metal-doped polyoxotitanium cages are a developing class of inorganic compounds which can be regarded as nano- and sub-nano sized molecular relatives of metal-doped titania nanoparticles. These species can serve as models for the ways in which dopant metal ions can be incorporated into metal-doped titania (TiO2 ), a technologically important class of photocatalytic materials with broad applications in devices and pollution control. In this study a series of cobalt(II)-containing cages in the size range ca. 0.7-1.3 nm have been synthesized and structurally characterized, allowing a coherent study of the factors affecting the band gaps in well-defined metal-doped model systems. Band structure calculations are consistent with experimental UV/Vis measurements of the Tix Oy absorption edges in these species and reveal that molecular dipole moment can have a profound effect on the band gap. The observation of a dipole-induced band-gap decrease mechanism provides a potentially general design strategy for the formation of low band-gap inorganic cages.
Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
Guilloy, K.; Pauc, N.; Gassenq, A.; Niquet, Y. M.; Escalante, J. M.; Duchemin, I.; Tardif, S; Dias, G. Osvaldo; Rouchon, D.; Widiez, J.; Hartmann, J.M.; Geiger, R.; Zabel, T.; Sigg, H; Faist, J.
2016-01-01
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress ger...
Generalized thermoelastic wave band gaps in phononic crystals without energy dissipation
Wu, Ying; Yu, Kaiping; Li, Xiao; Zhou, Haotian
2016-01-01
We present a theoretical investigation of the thermoelastic wave propagation in the phononic crystals in the context of Green-Nagdhi theory by taking thermoelastic coupling into account. The thermal field is assumed to be steady. Thermoelastic wave band structures of 3D and 2D are derived by using the plane wave expansion method. For the 2D problem, the anti-plane shear mode is not affected by the temperature difference. Thermoelastic wave bands of the in-plane x-y mode are calculated for lead/silicone rubber, aluminium/silicone rubber, and aurum/silicone rubber phononic crystals. The new findings in the numerical results indicate that the thermoelastic wave bands are composed of the pure elastic wave bands and the thermal wave bands, and that the thermal wave bands can serve as the low boundary of the first band gap when the filling ratio is low. In addition, for the lead/silicone rubber phononic crystals the effects of lattice type (square, rectangle, regular triangle, and hexagon) and inclusion shape (circle, oval, and square) on the normalized thermoelastic bandwidth and the upper/lower gap boundaries are analysed and discussed. It is concluded that their effects on the thermoelastic wave band structure are remarkable.
Zaghdoudi, J.; Kuszelewicz, R.; Kanzari, M.; Rezig, B.
2008-04-01
Slow light offers many opportunities for photonic devices by increasing the effective interaction length of imposed refractive index changes. The slow wave effect in photonic crystals is based on their unique dispersive properties and thus entirely dielectric in nature. In this work we demonstrate an interesting opportunity to decrease drastically the group velocity of light in one-dimensional photonic crystals constructed form materials with large dielectric constant without dispersion). We use numerical analysis to study the photonic properties of periodic (Bragg mirror) and quasiperiodic one dimensional photonic crystals realized to engineer slow light effects. Various geometries of the photonic pattern have been characterized and their photonic band-gap structure analyzed. Indeed, one dimensional quasi periodic photonic multilayer structure based on Fibonacci, Thue-Morse, and Cantor sequences were studied. Quasiperiodic structures have a rich and highly fragmented reflectivity spectrum with many sharp resonant peaks that could be exploited in a microcavity system. A comparison of group velocity through periodic and quasiperiodic photonic crystals was discussed in the context of slow light propagation. The velocity control of pulses in materials is one of the promising applications of photonic crystals. The material systems used for the numerical analysis are TiO II/SiO II and Te/SiO II which have a refractive index contrast of approximately 1.59 and 3.17 respectively. The proposed structures were modelled using the Transfer Matrix Method.
Relationship between band gap and bond length alternation in organic conjugated polymers
Bredas, J. L.
1985-04-01
A description is given of calculations of the evolution of the band gap as a function of geometry in conjugated polymers based on aromatic rings; polyparaphenylene, polypyrrole, polythiophene. The results demonstrate that the gap decreases as a function of increasing quinoid character of the backbone and is thus not minimal in the case of zero bond length alternation, in contrast to the situation found in polyacetylene-like compounds. The consequences of these results are stressed for the understanding of the effects of doping and for the design of new organic polymers with small gaps.
Indian Academy of Sciences (India)
Navinder Singh
2005-01-01
A model calculation is given for the energy relaxation of a non-equilibrium distribution of hot electrons (holes) prepared in the conduction (valence) band of a polar indirect band-gap semiconductor, which has been subjected to homogeneous photoexcitation by a femtosecond laser pulse. The model assumes that the pulsed photoexcitation creates two distinct but spatially interpenetrating electron and hole non-equilibrium subsystems that initially relax non-radiatively through the electron (hole)–phonon processes towards the conduction (valence) band minimum (maximum), and finally radiatively through the phonon-assisted electron–hole recombination across the band-gap, which is a relatively slow process. This leads to an accumulation of electrons (holes) at the conduction (valence) band minimum (maximum). The resulting peaking of the carrier density and the entire evolution of the hot electron (hole) distribution has been calculated. The latter may be time resolved by a pump-probe study. The model is particularly applicable to a divided (nanometric) polar indirect band-gap semiconductor with a low carrier concentration and strong electron–phonon coupling, where the usual two-temperature model [1–4] may not be appropriate.
Ultrawide low frequency band gap of phononic crystal in nacreous composite material
Energy Technology Data Exchange (ETDEWEB)
Yin, J.; Huang, J.; Zhang, S., E-mail: zhangs@dlut.edu.cn; Zhang, H.W.; Chen, B.S.
2014-06-27
The band structure of a nacreous composite material is studied by two proposed models, where an ultrawide low frequency band gap is observed. The first model (tension-shear chain model) with two phases including brick and mortar is investigated to describe the wave propagation in the nacreous composite material, and the dispersion relation is calculated by transfer matrix method and Bloch theorem. The results show that the frequency ranges of the pass bands are quite narrow, because a special tension-shear chain motion in the nacreous composite material is formed by some very slow modes. Furthermore, the second model (two-dimensional finite element model) is presented to investigate its band gap by a multi-level substructure scheme. Our findings will be of great value to the design and synthesis of vibration isolation materials in a wide and low frequency range. Finally, the transmission characteristics are calculated to verify the results. - Highlights: • A Brick-and-Mortar structure is used to discuss wave propagation through nacreous materials. • A 1D Bloch wave solution of nacreous materials with a tension-shear chain model is obtained. • The band structure and transmission characteristics of nacreous materials with the FE model are examined. • An ultrawide low frequency band gap is found in nacreous materials with both theory and FE model.
Electronic structure of the valence band of II--VI wide band gap semiconductor interfaces
1996-01-01
In this work we present the electronic band structure for (001)--CdTe interfaces with some other II--VI zinc blende semiconductors. We assume ideal interfaces. We use tight binding Hamiltonians with an orthogonal basis ($s p^3 s^*$). We make use of the well--known Surface Green's Function Matching method to calculate the interface band structure. In our calculation the dominion of the interface is constituted by four atomic layers. We consider here anion--anion interfaces only. We have includ...
Energy Technology Data Exchange (ETDEWEB)
Chen, Yihang, E-mail: eon.chen@yahoo.com.cn [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou (China); Wang, Xinggang [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou (China); Yong, Zehui; Zhang, Yunjuan [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Chen, Zefeng [Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou (China); He, Lianxing; Lee, P.F.; Chan, Helen L.W.; Leung, Chi Wah [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Wang, Yu, E-mail: apywang@inet.polyu.edu.hk [Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China)
2012-03-19
Composite right/left-handed transmission lines with lumped element series capacitors and shunt inductors are used to experimentally realize the one-dimensional photonic crystals composed of single-negative metamaterials. The simulated and experimental results show that a special photonic band gap corresponding to zero-effective-phase (zero-φ{sub eff}) may appear in the microwave regime. In contrast to the Bragg gap, by changing the length ratio of the two component materials, the width and depth of the zero-φ{sub eff} gap can be conveniently adjusted while keeping the center frequency constant. Furthermore, the zero-φ{sub eff} gap vanishes when both the phase-matching and impedance-matching conditions are satisfied simultaneously. These transmission line structures provide a good way for realizing microwave devices based on the zero-φ{sub eff} gap. -- Highlights: ► 1D photonic crystals with metamaterials were investigated experimentally. ► Both Bragg gap and zero-φ{sub eff} gap were observed in the microwave regime. ► The width and depth of the zero-φ{sub eff} gap were experimentally adjusted. ► Zero-φ{sub eff} gap was observed to be close when two match conditions were satisfied.
Strain-engineered band parameters of graphene-like SiC monolayer
Behera, Harihar; Mukhopadhyay, Gautam
2014-10-01
Using full-potential density functional theory (DFT) calculations we show that the band gap and effective masses of charge carriers in SiC monolayer (ML-SiC) in graphene-like two-dimensional honeycomb structure are tunable by strain engineering. ML-SiC was found to preserve its flat 2D graphene-like structure under compressive strain up to 7%. A transition from indirect-to-direct gap-phase is predicted to occur for a strain value lying within the interval (1.11 %, 1.76%). In both gap-phases band gap decreases with increasing strain, although the rate of decrease is different in the two gap-phases. Effective mass of electrons show a non-linearly decreasing trend with increasing tensile strain in the direct gap-phase. The strain-sensitive properties of ML-SiC, may find applications in future strain-sensors, nanoelectromechanical systems (NEMS) and nano-optomechanical systems (NOMS) and other nano-devices.
Theory of Thermodynamic Variables of Rubber Band Heat Engine
Muharayu, Nurhidayah; Widayani; Khairurrijal
2016-08-01
Rubber band heat engine is a heat engine that is easily applied in the experiment. However, to get the data from the experimental results are required a formulation that is able to accommodate the data, so that it will be obtained an accurate value. We show and analyze the variables thermodynamic formulation of rubber band heat engine to accommodate the experimental data, so that the equation of state, heat, work and efficiency are not only studied theoretically but also experimentally. The engine's efficiency is calculated for an idealized but reasonable model. The engine's work cycle is compared with a Carnot cycle, and it is shown to be equivalent to the Carnot cycle as an extremely ideal limiting case. We measured the force law parameters for a working model, and we obtained the efficiency of this model.
Photonic Band Gaps in Two-Dimensional Crystals with Fractal Structure
Institute of Scientific and Technical Information of China (English)
刘征; 徐建军; 林志方
2003-01-01
We simulate the changes of the photonic band structure of the crystal in two dimensions with a quasi-fractal structure when it is fined to a fractal. The result shows that when the dielectric distribution is fined, the photonic band structure will be compressed on the whole and the ground photonic band gap (PBG) closed while the next PBGs shrunk, in conjunction with their position declining in the frequency spectrum. Furthermore, the PBGs in the high zone are much more sensitive than those in low zones.
Directory of Open Access Journals (Sweden)
Xiao-Peng Wang
2015-10-01
Full Text Available In this paper, the tuning characteristics of band gaps and waveguides in a locally resonant phononic crystal structure, consisting of multiple square stubs deposited on a thin homogeneous plate, are investigated. Using the finite element method and supercell technique, the dispersion relationships and power transmission spectra of those structures are calculated. In contrast to a system of one square stub, systems of multiple square stubs show wide band gaps at lower frequencies and an increased quantity of band gaps at higher frequencies. The vibration modes of the band gap edges are analyzed to clarify the mechanism of the generation of the lowest band gap. Additionally, the influence of the stubs arrangement on the band gaps in multi-stub systems is investigated. The arrangements of the stubs were found to influence the band gaps; this is critical to understand for practical applications. Based on this finding, a novel method to form defect scatterers by changing the arrangement of square stubs in a multi-stub perfect phononic crystal plate was developed. Defect bands can be induced by creating defects inside the original complete band gaps. The frequency can then be tuned by changing the defect scatterers’ stub arrangement. These results will help in fabricating devices such as acoustic filters and waveguides whose band frequency can be modulated.
High-power picosecond pulse delivery through hollow core photonic band gap fibers
DEFF Research Database (Denmark)
Michieletto, Mattia; Johansen, Mette Marie; Lyngsø, Jens Kristian;
2016-01-01
We demonstrated robust and bend insensitive fiber delivery of high power laser with diffraction limited beam quality for two different kinds of hollow core band gap fibers. The light source for this experiment consists of ytterbium-doped double clad fiber aeroGAIN-ROD-PM85 in a high power amplifier...
Band gap and conductivity evaluation of carbon nanotube with hematite for green ammonia synthesis
Rehman, Zia Ur; Yahya, Noorhana; Shafie, A'fza; Soleimani, Hassan; Alqasim, Bilal Hassan; Irfan, Muhammad; Qureshi, Saima
2016-11-01
To understand the change in number of electrons, band gap and total energy in the catalyst simulation was performed using Cambridge Serial Total Energy Package (CASTEP). Two catalyst were taken into consideration namely carbon nanotubes (CNTs) and hematite adjacent with CNTs. The simulation based study of the adsorption of hydrogen and nitrogen with reference to change in number of electron and band-gap of carbon nano tubes and hematite mixed with carbon nanotubes was not reported in literature. For this reason carbon nanotubes band gap for different chirality and number of walls was calculated through simulation. After that simulation for number of electrons, band gap and average total energy of CNTs alone and a mixture hematite with CNTs was performed before and after adsorption of hydrogen and nitrogen. From simulation the number of electrons were found to be doubled for hematite mixed with CNTs and average total energy was also increased as compared to similar parameter for CNTs without hematite. In conclusion the hematite with carbon nanotubes is preferred candidate for ammonia synthesis using magnetic induction method. Ammonia synthesis was done using MIM. Ammonia yield was quantified by Kjaldal method.
Transmission measurement of the photonic band gap of GaN photonic crystal slabs
Caro, J.; Roeling, E.M.; Rong, B.; Nguyen, H.M.; Van der Drift, E.W.J.M.; Rogge, S.; Karouta, F.; Van der Heijden, R.W.; Salemink, H.W.M.
2008-01-01
A high-contrast-ratio (30 dB) photonic band gap in the near-infrared transmission of hole-type GaN two-dimensional photonic crystals (PhCs) is reported. These crystals are deeply etched in a 650 nm thick GaN layer grown on sapphire. A comparison of the measured spectrum with finite difference time d
Surface plasmon polariton band gap structures: implications to integrated plasmonic circuits
DEFF Research Database (Denmark)
Bozhevolnyi, S. I.; Volkov, V. S.; Østergaard, John Erland;
2001-01-01
Conventional photonic band gap (PBG) structures are composed of regions with periodic modulation of refractive index that do not allow the propagation of electromagnetic waves in a certain interval of wavelengths, i.e., that exhibit the PBG effect. The PBG effect is essentially an interference ph...
A novel benzodipyrrolidone-based low band gap polymer for organic solar cells
DEFF Research Database (Denmark)
Yue, Wei; Huang, Xiaodong; Yuan, Jianyu;
2013-01-01
A low band gap polymer PBDPDP-DTP, with alternating benzodipyrrolidone (BDP) unit and dithienopyrrole, was synthesized and characterized. A PCE of 2.60%and a Voc of up to 0.74 V were realized in PSCs, which demonstrated the strong potential of BDP as the electron deficient unit in the design...... of donor–acceptor conjugated polymers for PSCs....
Photonic band gaps in materials with triply periodic surfaces and related tubular structures
Michielsen, K; Kole, JS
2003-01-01
We calculate the photonic band gap of triply periodic bicontinuous cubic structures and of tubular structures constructed from the skeletal graphs of triply periodic minimal surfaces. The effect of the symmetry and topology of the periodic dielectric structures on the existence and the characteristi
Photonic Band Gap Structures with Periodically Arranged Atoms in a Two-Dimensional Photonic Crystal
Institute of Scientific and Technical Information of China (English)
LI Zhi-Yu; CHEN Fang; ZHOU Jian-Ying
2005-01-01
@@ Linear transmission, reflection and absorption spectra for a new two-dimensional photonic crystal with periodically arranged resonant atoms are examined. Numerical results show that a twin-gap structure with forbidden bands displaced from a non-doped bandgap structure can be produced as a result of atomic polarization. The absorption spectrum is also significantly altered compared to the single atom entity.
Experimental investigation of hollow-core photonic crystal fibers with five photonic band-gaps
Institute of Scientific and Technical Information of China (English)
YUAN Jin-hui; HOU Lan-tian; WEI Dong-bin; WANG Hai-yun; ZHOU Gui-yao
2008-01-01
The hollow-core photonic crystal fibers (HC-PCFs) with integrity structure have been fabricated with an improved twice stack-and-draw technique. The transmission spectrum shows that five photonic band-gaps within 450-1100 nm have been obtained.And the green light transmission in the HC-PCFs'has been observed remarkably.
Photonic band gap structures for long-range surface plasmon polaritons
DEFF Research Database (Denmark)
Bozhevolnyi, Sergey I.; Boltasseva, Alexandra; Søndergaard, Thomas;
2005-01-01
-size thickness variations result in the pronounced band gap effect, and obtain very good agreement between measured and simulated (transmission and reflection) spectra. This effect is exploited to realize a compact wavelength add-drop filter with the bandwidth of ~20 nm centered at 1550 nm. The possibilities...
DEFF Research Database (Denmark)
Carlé, Jon Eggert; Jørgensen, Mikkel; Manceau, Matthieu;
2011-01-01
We investigate a family of low band-gap polymers based on the common acceptor moiety 2,3-bis-(3-octyloxyphenyl)quinoxaline (Q) combined with thiophene (T) or the fused thiophene systems: benzo[2,1-b:3,4-b′]-dithiophene (BDT) or dithieno[3,2-b,2′,3′-d]-thiophene (DTT). The photochemical stability ...
OPTICAL BAND GAP AND CONDUCTIVITY MEASUREMENTS OF POLYPYRROLE-CHITOSAN COMPOSITE THIN FILMS
Institute of Scientific and Technical Information of China (English)
Mahnaz M.Abdi; H.N.M.Ekramul Mahmud; Luqman Chuah Abdullah; Anuar Kassim; Mohamad Zaki Ab.Rahman; Josephine Liew Ying Chyi
2012-01-01
Electrical conductivity and optical properties of polypyrrole-chitosan (PPy-CHI) conducting polymer composites have been investigated to determine the optical transition characteristics and energy band gap of composite films.The two electrode method and Ⅰ-Ⅴ characteristic technique were used to measure the conductivity of the PPy-CHI thin films,and the optical band gap was obtained from their ultraviolet absorption edges.Depending upon experimental parameter,the optical band gap (Eg) was found within 1.30-2.32 eV as estimated from optical absorption data.The band gap of the composite films decreased as the CHI content increased.The room temperature electrical conductivity of PPy-CHI thin films was found in the range of 5.84 × 10-7-15.25 × 10-7 S.cm-1 depending on the chitosan content.The thermogravimetry analysis (TGA)showed that the CHI can improve the thermal stability of PPy-CHI composite films.
Mittal, Mona; Jana, Atanu; Sarkar, Sagar; Mahadevan, Priya; Sapra, Sameer
2016-08-18
A few approaches have been employed to tune the band gap of colloidal organic-inorganic trihalide perovskites (OTPs) nanocrystals by changing the halide anion. However, to date, there is no report of electronic structure tuning of perovskite NCs upon changing the organic cation. We report here, for the first time, the room temperature colloidal synthesis of (EA)x(MA)1-xPbBr3 nanocrystals (NCs) (where, x varies between 0 and 1) to tune the band gap of hybrid organic-inorganic lead perovskite NCs from 2.38 to 2.94 eV by varying the ratio of ethylammonium (EA) and methylammonium (MA) cations. The tuning of band gap is confirmed by electronic structure calculations within density functional theory, which explains the increase in the band gap upon going toward larger "A" site cations in APbBr3 NCs. The photoluminescence quantum yield (PLQY) of these NCs lies between 5% to 85% and the average lifetime falls in the range 1.4 to 215 ns. A mixture of MA cations and its higher analog EA cations provide a versatile tool to tune the structural as well as optoelectronic properties of perovskite NCs.
Effects of weak nonlinearity on dispersion relations and frequency band-gaps of periodic structures
DEFF Research Database (Denmark)
Sorokin, Vladislav; Thomsen, Jon Juel
2015-01-01
The analysis of the behaviour of linear periodic structures can be traced back over 300 years, to Sir Isaac Newton, and still attracts much attention. An essential feature of periodic struc-tures is the presence of frequency band-gaps, i.e. frequency ranges in which waves cannot propagate...
H-shaped oligothiophenes with low band gaps and amphoteric redox properties
Luo, Jing
2010-12-17
H-shaped bridged oligothiophenes HT-1 and HT-2 were synthesized by two different approaches. Different from normal oligothiophenes, HT-1 and HT-2 showed low band gaps and amphoteric redox behaviors due to intramolecular charge transfer, which is further supported by time-dependent DFT calculations. © 2010 American Chemical Society.
Nanoscale mapping of optical band gaps using monochromated electron energy loss spectroscopy
Zhan, W.; Granerød, C. S.; Venkatachalapathy, V.; Johansen, K. M. H.; Jensen, I. J. T.; Kuznetsov, A. Yu; Prytz, Ø.
2017-03-01
Using monochromated electron energy loss spectroscopy in a probe-corrected scanning transmission electron microscope we demonstrate band gap mapping in ZnO/ZnCdO thin films with a spatial resolution below 10 nm and spectral precision of 20 meV.
Zhang, Shengli; Yan, Zhong; Li, Yafei; Chen, Zhongfang; Zeng, Haibo
2015-03-01
The typical two-dimensional (2D) semiconductors MoS2, MoSe2, WS2, WSe2 and black phosphorus have garnered tremendous interest for their unique electronic, optical, and chemical properties. However, all 2D semiconductors reported thus far feature band gaps that are smaller than 2.0 eV, which has greatly restricted their applications, especially in optoelectronic devices with photoresponse in the blue and UV range. Novel 2D mono-elemental semiconductors, namely monolayered arsenene and antimonene, with wide band gaps and high stability were now developed based on first-principles calculations. Interestingly, although As and Sb are typically semimetals in the bulk, they are transformed into indirect semiconductors with band gaps of 2.49 and 2.28 eV when thinned to one atomic layer. Significantly, under small biaxial strain, these materials were transformed from indirect into direct band-gap semiconductors. Such dramatic changes in the electronic structure could pave the way for transistors with high on/off ratios, optoelectronic devices working under blue or UV light, and mechanical sensors based on new 2D crystals.
Phononic band gaps and vibrations in one- and two-dimensional mass-spring structures
DEFF Research Database (Denmark)
Jensen, Jakob Søndergaard
2003-01-01
The vibrational response of finite periodic lattice structures subjected to periodic loading is investigated. Special attention is devoted to the response in frequency ranges with gaps in the band structure for the corresponding infinite periodic lattice. The effects of boundaries, viscous dampin...
Optical study of the band structure of wurtzite GaP nanowires
Assali, S.
2016-07-25
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.
Energy Dependence and Scaling Property of Localization Length near a Gapped Flat Band
Ge, Li
2015-01-01
Using a tight-binding model for a one-dimensional Lieb lattice, we show that the localization length near a gapped flat band behaves differently from the typical Urbach tail in a band gap: instead of reducing monotonically as the energy E moves away from the flat band energy E_{FB}, the presence of the flat band causes a nonmonotonic energy dependence of the localization length. This energy dependence follows a scaling property when the energy is within the spread (W) of uniformly distributed diagonal disorder, i.e. the localization length is only a function of (E-E_{FB})/W. Several other lattices are compared to distinguish the effect of the flat band on the localization length, where we eliminate, shift, or duplicate the flat band, without changing the dispersion relations of other bands. Using the top right element of the Green's matrix, we derive an analytical relation between the density of states and the localization length, which shines light on these properties of the latter, including a summation rul...
Stable Band-Gaps in Phononic Crystals by Harnessing Hyperelastic Transformation Media
Liu, Yan; Feng, Xi-Qiao
2016-01-01
The band structure in phononic crystals (PCs) is usually affected by the deformations of their soft components. In this work, hyperelastic transformation media is proposed to be integrated in the PCs'design, to achieve stable elastic band-gaps which is independent with finite mechanical deformations. For a one-dimensional (1D) PC, we demonstrate the semi-linear soft component can keep all elastic wave bands unchanged with the external deformation field. While for neo-Hookean soft component, only S-wave bands can be precisely retained. The change of the P-wave bands can be predicted by using a lumped mass method. Numerical simulations are performed to validate our theory predictions and the robustness of the proposed PCs.
Energy Technology Data Exchange (ETDEWEB)
Asai, Hidehiro, E-mail: hd-asai@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ota, Yukihiro [CCSE, Japan Atomic Energy Agency, Kashiwa, Chiba 277-8587 (Japan); Kawabata, Shiro [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Nori, Franco [CEMS, RIKEN, Wako-shi, Saitama 351-0198 (Japan); Physics Department, University of Michigan, Ann Arbor, MI 48109-1040 (United States)
2014-09-15
Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate.
Tuning of band gaps for a two-dimensional piezoelectric phononic crystal with a rectangular lattice
Institute of Scientific and Technical Information of China (English)
Yize Wang; Fengming Li; Yuesheng Wang; Kikuo Kishimoto; Wenhu Huang
2009-01-01
In this paper, the elastic wave propagation in a two-dimensional piezoelectric phononic crystal is studied by considering the mechanic-electric coupling. The gener-alized eigenvalue equation is obtained by the relation of the mechanic and electric fields as well as the Bloch-Floquet the-orem. The band structures of both the in-plane and anti-plane modes are calculated for a rectangular lattice by the plane-wave expansion method. The effects of the lattice constant ratio and the piezoelectricity with different filling fractions are analyzed. The results show that the largest gap width is not always obtained for a square lattice. In some situations, a rectangular lattice may generate larger gaps. The band gap characteristics are influenced obviously by the piezoelectric-ity with the larger lattice constant ratios and the filling frac-tions.
Effect of Microstructure of TiO2 Thin Films on Optical Band Gap Energy
Institute of Scientific and Technical Information of China (English)
TIAN Guang-Lei; HE Hong-Bo; SHAO Jian-Da
2005-01-01
@@ TiO2 coatings are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for four hours, the spectra and XRD patterns of TiO2 thin film are obtained. XRD patterns reveal that only anatase phase can be observed in TiO2 coatings regardless of the different annealing temperatures, and with the increasing annealing temperature, the grain size gradually increases. The relationship between the energy gap and microstructure of anatase is determined and discussed. The quantum confinement effect is observed that with the increasing grain size of TiO2 thin film, the band gap energy shifts from 3.4eV to 3.21 eV. Moreover, other possible influence of the TiO2 thin-film microstructure, such as surface roughness and thin film absorption, on band gap energy is also expected.
Gap engineering using Hellmann-Feynmann forces: method and applications
Prasai, Kiran; Biawas, Parthapratim; Drabold, D. A.
Materials with optimized band gap are needed in many specialized applications. In this talk, we demonstrate that Hellmann-Feynman forces associated with the gap states can be used to find atomic coordinates that yield desired electronic density of states. Using tight-binding models, we show that this approach may be used to arrive at electronically designed models of amorphous silicon and carbon. We provide a simple recipe to include a priori electronic information in the formation of computer models of materials, and prove that this information may have profound structural consequences. We'll briefly discuss implementation of the method in ab-initio molecular dynamics simulations and highlight the latest feats of the method ranging from modeling amorphous semi-conducting materials to understanding the structure and properties of memory materials. K. Prasai, P. Biswas, and D. A. Drabold, Scientific reports, 5 (2015).
The Development of Layered Photonic Band Gap Structures Using a Micro-Transfer Molding Technique
Energy Technology Data Exchange (ETDEWEB)
Sutherland, Kevin Jerome [Iowa State Univ., Ames, IA (United States)
2001-01-01
Photonic band gap (PBG) crystals are periodic dielectric structures that manipulate electromagnetic radiation in a manner similar to semiconductor devices manipulating electrons. Whereas a semiconductor material exhibits an electronic band gap in which electrons cannot exist, similarly, a photonic crystal containing a photonic band gap does not allow the propagation of specific frequencies of electromagnetic radiation. This phenomenon results from the destructive Bragg diffraction interference that a wave propagating at a specific frequency will experience because of the periodic change in dielectric permitivity. This gives rise to a variety of optical applications for improving the efficiency and effectiveness of opto-electronic devices. These applications are reviewed later. Several methods are currently used to fabricate photonic crystals, which are also discussed in detail. This research involves a layer-by-layer micro-transfer molding ({mu}TM) and stacking method to create three-dimensional FCC structures of epoxy or titania. The structures, once reduced significantly in size can be infiltrated with an organic gain media and stacked on a semiconductor to improve the efficiency of an electronically pumped light-emitting diode. Photonic band gap structures have been proven to effectively create a band gap for certain frequencies of electro-magnetic radiation in the microwave and near-infrared ranges. The objective of this research project was originally two-fold: to fabricate a three dimensional (3-D) structure of a size scaled to prohibit electromagnetic propagation within the visible wavelength range, and then to characterize that structure using laser dye emission spectra. As a master mold has not yet been developed for the micro transfer molding technique in the visible range, the research was limited to scaling down the length scale as much as possible with the current available technology and characterizing these structures with other methods.
Vibration band gaps for elastic metamaterial rods using wave finite element method
Nobrega, E. D.; Gautier, F.; Pelat, A.; Dos Santos, J. M. C.
2016-10-01
Band gaps in elastic metamaterial rods with spatial periodic distribution and periodically attached local resonators are investigated. New techniques to analyze metamaterial systems are using a combination of analytical or numerical method with wave propagation. One of them, called here wave spectral element method (WSEM), consists of combining the spectral element method (SEM) with Floquet-Bloch's theorem. A modern methodology called wave finite element method (WFEM), developed to calculate dynamic behavior in periodic acoustic and structural systems, utilizes a similar approach where SEM is substituted by the conventional finite element method (FEM). In this paper, it is proposed to use WFEM to calculate band gaps in elastic metamaterial rods with spatial periodic distribution and periodically attached local resonators of multi-degree-of-freedom (M-DOF). Simulated examples with band gaps generated by Bragg scattering and local resonators are calculated by WFEM and verified with WSEM, which is used as a reference method. Results are presented in the form of attenuation constant, vibration transmittance and frequency response function (FRF). For all cases, WFEM and WSEM results are in agreement, provided that the number of elements used in WFEM is sufficient to convergence. An experimental test was conducted with a real elastic metamaterial rod, manufactured with plastic in a 3D printer, without local resonance-type effect. The experimental results for the metamaterial rod with band gaps generated by Bragg scattering are compared with the simulated ones. Both numerical methods (WSEM and WFEM) can localize the band gap position and width very close to the experimental results. A hybrid approach combining WFEM with the commercial finite element software ANSYS is proposed to model complex metamaterial systems. Two examples illustrating its efficiency and accuracy to model an elastic metamaterial rod unit-cell using 1D simple rod element and 3D solid element are
Effect of Sn on the optical band gap determined using absorption spectrum fitting method
Energy Technology Data Exchange (ETDEWEB)
Heera, Pawan, E-mail: sramanb70@mailcity.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India); Govt. College Amb, Himachal Pradesh, INDIA,177203 (India); Kumar, Anup, E-mail: kumar.anup.sml@gmail.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India); Physics Department, Govt. College, Kullu, H. P., INDIA, 175101 (India); Sharma, Raman, E-mail: pawanheera@yahoo.com [Department of Physics, Himachal Pradesh University, Shimla, INDIA, 171005 (India)
2015-05-15
We report the preparation and the optical studies on tellurium rich glasses thin films. The thin films of Se{sub 30}Te{sub 70-x} Sn{sub x} system for x= 0, 1.5, 2.5 and 4.5 glassy alloys prepared by melt quenching technique are deposited on the glass substrate using vacuum thermal evaporation technique. The analysis of absorption spectra in the spectral range 400nm–4000 nm at room temperature obtained from UV-VIS-NIR spectrophotometer [Perkin Elmer Lamda-750] helps us in the optical characterization of the thin films under study. The absorption spectrum fitting method is applied by using the Tauc’s model for estimating the optical band gap and the width of the band tail of the thin films. The optical band gap is calculated and is found to decrease with the Sn content.
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
DEFF Research Database (Denmark)
Canulescu, Stela; Rechendorff, K.; Borca, C. N.;
2014-01-01
The band structure of pure and Ti-alloyed anodic aluminum oxide has been examined as a function of Ti concentration varying from 2 to 20 at. %. The band gap energy of Ti-alloyed anodic Al oxide decreases with increasing Ti concentration. X-ray absorption spectroscopy reveals that Ti atoms...... are not located in a TiO2 unit in the oxide layer, but rather in a mixed Ti-Al oxide layer. The optical band gap energy of the anodic oxide layers was determined by vacuum ultraviolet spectroscopy in the energy range from 4.1 to 9.2 eV (300–135 nm). The results indicate that amorphous anodic Al2O3 has a direct...
DEFF Research Database (Denmark)
Pandey, Mohnish; Jacobsen, Karsten Wedel; Thygesen, Kristian Sommer
2016-01-01
Organic−inorganic halide perovskites have proven highly successful for photovoltaics but suffer from low stability, which deteriorates their performance over time. Recent experiments have demonstrated that low dimensional phases of the hybrid perovskites may exhibit improved stability. Here we...... report first-principles calculations for isolated monolayers of the organometallic halide perovskites (C4H9NH3)2MX2Y2, where M = Pb, Ge, Sn and X,Y = Cl, Br, I. The band gaps computed using the GLLB-SC functional are found to be in excellent agreement with experimental photoluminescence data...... for the already synthesized perovskites. Finally, we study the effect of different defects on the band structure. We find that the most common defects only introduce shallow or no states in the band gap, indicating that these atomically thin 2D perovskites are likely to be defect tolerant....
Directory of Open Access Journals (Sweden)
P. Kovacs
2010-04-01
Full Text Available The paper is focused on the automated design and optimization of electromagnetic band gap structures suppressing the propagation of surface waves. For the optimization, we use different global evolutionary algorithms like the genetic algorithm with the single-point crossover (GAs and the multi-point (GAm one, the differential evolution (DE and particle swarm optimization (PSO. The algorithms are mutually compared in terms of convergence velocity and accuracy. The developed technique is universal (applicable for any unit cell geometry. The method is based on the dispersion diagram calculation in CST Microwave Studio (CST MWS and optimization in Matlab. A design example of a mushroom structure with simultaneous electromagnetic band gap properties (EBG and the artificial magnetic conductor ones (AMC in the required frequency band is presented.
Energy Technology Data Exchange (ETDEWEB)
Wang, Yaqin [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Tang, Wu, E-mail: tang@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhang, Lan [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Zhao, Junliang [Shanghai Juntech Co. Ltd., 1378 Xingxian Road, Shanghai 201815 (China)
2014-08-28
Ga-doped ZnO (GZO) thin films were deposited on glass substrates by a radio frequency magnetron sputtering technique. The optical properties of the deposited GZO films were evaluated using an optical transmission measurement. The optical band gap increased from 3.32 eV to 3.45 eV with the increasing carrier density from 2.0 × 10{sup 20} cm{sup −3} to 3.24 × 10{sup 20} cm{sup −3}. Based on the experimental results, the optical band gap as a function of carrier density is systematically investigated with four available theoretical models taken into consideration. The blueshift of the optical band gap in GZO films can be well interpreted with a complex model which combines the Burstein–Moss effect, the band gap renormalization effect and the nonparabolic nature of conduction band. In addition, the BM contribution is almost offset by the BGR effect in both conduction band and valence band due to the approximate equality between electron and hole effective masses in GZO films with a nonparabolic conduction band. The tunability of optical band gap in GZO thin films by carrier density offers a number of potential advantages in the development of semiconductor optoelectronic devices. - Highlights: • The effects of electron concentration on optical band gap were analyzed. • The measured optical band gap corresponded well with the calculated ones. • The Burstein–Moss (BM) and band gap renormalization (BGR) effects were considered. • Nonparabolic conduction band parameters were used in theoretical analysis. • The BM effect was offset by the BGR effect in both conduction band and valence band.
Zero permeability and zero permittivity band gaps in 1D metamaterial photonic crystals
Energy Technology Data Exchange (ETDEWEB)
Depine, Ricardo A. [Grupo de Electromagnetismo Aplicado, Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon I, C1428EHA Buenos Aires (Argentina); Martinez-Ricci, Maria L. [Grupo de Electromagnetismo Aplicado, Departamento de Fisica, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, Ciudad Universitaria, Pabellon I, C1428EHA Buenos Aires (Argentina); Monsoriu, Juan A. [Departamento de Fisica Aplicada, Universidad Politecnica de Valencia, 46022 Valencia (Spain)]. E-mail: jmonsori@fis.upv.es; Silvestre, Enrique [Departamento de Optica, Universidad de Valencia, 46100 Burjassot (Spain); Andres, Pedro [Departamento de Optica, Universidad de Valencia, 46100 Burjassot (Spain)
2007-04-30
We consider layered heterostructures combining ordinary positive index materials and dispersive metamaterials. We show that these structures can exhibit a new type of photonic gap around frequencies where either the magnetic permeability {mu} or the electric permittivity {epsilon} of the metamaterial is zero. Although the interface of a semi-infinite medium with zero refractive index (a condition attained either when {mu}=0 or when {epsilon}=0) is known to give full reflectivity for all incident polarizations, here we show that a gap corresponding to {mu}=0 occurs only for TE polarized waves, whereas a gap corresponding to {epsilon}=0 occurs only for TM polarized waves. These band gaps are scale-length invariant and very robust against disorder, although they may disappear for the particular case of propagation along the stratification direction.
Synthesis and Band Gap Control in Three-Dimensional Polystyrene Opal Photonic Crystals
Institute of Scientific and Technical Information of China (English)
LIU Ye; ZHENG Zhong-Yu; QIN Fei; ZHOU Fei; ZHOU Chang-Zhu; ZHANG Dao-Zhong; MENG Qing-Bo; LI Zhi-Yuan
2008-01-01
High-quality three-dimensional polystyrene opal photonic crystals are fabricated by vertical deposition method.The transmission properties with different incident angles and different composite refractive index contrasts are experimentally and theoretically studied. Good agreement between the experiment and theory is achieved. We find that with the increasing incident angle, the gap position shifts to the short wavelength (blue shift) and the gap becomes shallower; and with the increase of refractive index of the opal void materials and decrease the contrast of refractive index, the gap position shifts to the long wavelength (red shift). At the same time, we observe the swelling effects when the sample is immerged in the solutions with different refractive indices, which make the microsphere diameter in solution become larger than that in air. The understanding of band gap shift behaviour may be helpful in designing optical sensors and tunable photonic crystal ultrafast optical switches.
Photonic band gap of a graphene-embedded quarter-wave stack
Fan, Yuancheng; Li, Hongqiang; Chen, Hong; Soukoulis, Costas M
2013-01-01
Here, we present a mechanism for tailoring the photonic band structure of a quarter-wave stack without changing its physical periods by embedding conductive sheets. Graphene is utilized and studied as a realistic, two-dimensional conductive sheet. In a graphene-embedded quarter-wave stack, the synergic actions of Bragg scattering and graphene conductance contributions open photonic gaps at the center of the reduced Brillouin zone, that nonexistent in conventional quarter-wave stacks. Such photonic gaps show giant, loss-independent density of optical states at the fixed lower-gap-edges, of even-multiple characteristic frequency of the quarter-wave stack. The novel conductive sheets induced photonic gaps provide a new platform for the enhancement of light-matter interactions.
Energy Technology Data Exchange (ETDEWEB)
Vos, M. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Marmitt, G. G. [Atomic and Molecular Physics Laboratories, Research School of Physics and Engineering, Australian National University, Canberra ACT (Australia); Instituto de Fisica da Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, 91501-970 Porto Alegre, RS (Brazil); Finkelstein, Y. [Nuclear Research Center — Negev, Beer-Sheva 84190 (Israel); Moreh, R. [Physics Department, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)
2015-09-14
Reflection electron energy loss spectra from some insulating materials (CaCO{sub 3}, Li{sub 2}CO{sub 3}, and SiO{sub 2}) taken at relatively high incoming electron energies (5–40 keV) are analyzed. Here, one is bulk sensitive and a well-defined onset of inelastic excitations is observed from which one can infer the value of the band gap. An estimate of the band gap was obtained by fitting the spectra with a procedure that includes the recoil shift and recoil broadening affecting these measurements. The width of the elastic peak is directly connected to the mean kinetic energy of the atom in the material (Doppler broadening). The experimentally obtained mean kinetic energies of the O, C, Li, Ca, and Si atoms are compared with the calculated ones, and good agreement is found, especially if the effect of multiple scattering is taken into account. It is demonstrated experimentally that the onset of the inelastic excitation is also affected by Doppler broadening. Aided by this understanding, we can obtain a good fit of the elastic peak and the onset of inelastic excitations. For SiO{sub 2}, good agreement is obtained with the well-established value of the band gap (8.9 eV) only if it is assumed that the intensity near the edge scales as (E − E{sub gap}){sup 1.5}. For CaCO{sub 3}, the band gap obtained here (7 eV) is about 1 eV larger than the previous experimental value, whereas the value for Li{sub 2}CO{sub 3} (7.5 eV) is the first experimental estimate.
An operational method to model carrier degeneracy and band gap narrowing
Adler, M. S.
1983-05-01
In this paper an operational method of modeling heavily doped silicon to include effects of carrier degeneracy and band gap narrowing is presented. The issue of carier degeneracy on majority carrier flow is discussed together with the question of the ambiguity in the electrostatic potential associated with identifying which band edge is narrowed. Using an exact numerical analysis of a bipolar transistor as an example it is shown that when modeling carrier flow in quasi-neutral regions, classical statistics can be used for the majority carrier and the ambiguity in the electrostatic potential can be ignored. Overall, it is shown that for the same quasi-neutral heavily doped regions the effects of carrier degeneracy and band gap narrowing are accurately modeled within the context of classical statistics by adding the quasi field term to the minority carrier transport equation that is based on the commonly used "band gap narrowing" data available from measurements of minority carrier transport in heavily doped regions. While it is recognized that this is not rigorously correct the result of this paper is to establish the accuracy for the operational method most commonly used to model heavy doping effects.
Photonic bands, gap maps, and intrinsic losses in three-component 2D photonic crystal slabs
Institute of Scientific and Technical Information of China (English)
Hongjun Shen; Huiping Tian; Yuefeng Ji
2009-01-01
We obtain the photonic bands and intrinsic losses for the triangular lattice three-component two-dimensional (2D) photonic crystal (PhC) slabs by expanding the electromagnetic field on the basis of waveguide modes of an effective homogeneous waveguide. The introduction of the third component into the 2D PhC slabs influences the photonic band structure and the intrinsic losses of the system. We ex-amine the dependences of the band gap width and gap edge position on the interlayer dielectric constant and interlayer thickness. It is found that the gap edges shift to lower frequencies and the intrinsic losses of each band decrease with the increasing interlayer thickness or dielectric constant. During the design of the real PhC system, the effect of unintentional native oxide surface layer on the optical properties of 2D PhC slabs has to be taken into consideration. At the same time, intentional oxidization of macroporous PhC structure can be utilized to optimize the design.
Band gap modulation of transition-metal dichalcogenide MX2 nanosheets by in-plane strain
Su, Xiangying; Ju, Weiwei; Zhang, Ruizhi; Guo, Chongfeng; Yong, Yongliang; Cui, Hongling; Li, Xiaohong
2016-10-01
The electronic properties of quasi-two-dimensional honeycomb structures of MX2 nanosheets (M=Mo, W and X=S, Se) subjected to in-plane biaxial strain have been investigated using first-principles calculations. We demonstrate that the band gap of MX2 nanosheets can be widely tuned by applying tensile or compressive strain, and these ultrathin materials undergo a universal reversible semiconductor-metal transition at a critical strain. Compared to WX2, MoX2 need a smaller critical tensile strain for the band gap close, and MSe2 need a smaller critical compressive strain than MS2. Taking bilayer MoS2 as an example, the variation of the band structures was studied and the semiconductor-metal transition involves a slightly different physical mechanism between tensile and compressive strain. The ability to tune the band gap of MX2 nanosheets in a controlled fashion over a wide range of energy opens up the possibility for its usage in a range of application.
Dolgonos, Alex; Mason, Thomas O.; Poeppelmeier, Kenneth R.
2016-08-01
The direct optical band gap of semiconductors is traditionally measured by extrapolating the linear region of the square of the absorption curve to the x-axis, and a variation of this method, developed by Tauc, has also been widely used. The application of the Tauc method to crystalline materials is rooted in misconception-and traditional linear extrapolation methods are inappropriate for use on degenerate semiconductors, where the occupation of conduction band energy states cannot be ignored. A new method is proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors. This method was applied to pseudo-absorption spectra of Sn-doped In2O3 (ITO)-converted from diffuse-reflectance measurements on bulk specimens. The results of this analysis were corroborated by room-temperature photoluminescence excitation measurements, which yielded values of optical band gap and Burstein-Moss shift that are consistent with previous studies on In2O3 single crystals and thin films.
Development of ultra-narrow gap welding with constrained arc by flux band
Institute of Scientific and Technical Information of China (English)
Zhu Liang; Zheng Shaoxian; Chen Jianhong
2006-01-01
Narrow gap welding has merits of lower residual stress and distortion, and superior mechanical properties of joints.A major problem of this process is the lack of fusion in sidewalls, hence many methods of weaving arc have been developed to increase heating effect of arc to the sidewalls. In this work, a new approach without weaving arc is attempted to ensure the penetration of sidewall, and ultra-narrow gap welding with the gap of less than 5 mm was executed successfully. In this approach, the width of gap is decreased further, so that the sidewalls are made within range of arc heating to obtain the enough heat. Inorder to prevent the arc from being attracted by sidewall and going up alongthe sidewalls, two pieces of flux bands consisting of the specified aggregates are adhered to the sidewalls to constrain the arc. In addition, when flux band being heated by the arc, slag and gases are formed to shield the arc and the weld pool. This technique was tested on the welding experiment of pipeline steel with thickness of 20 mm. The involved welding parameters were obtained, that is, the width of gap is 4 mm, the welding current 250 A, and the heat input 0. 5 k J/mm, the width of heat-affected zone is 1 - 2mm.
Tang, Qing; Bao, Jie; Li, Yafei; Zhou, Zhen; Chen, Zhongfang
2014-08-07
Density functional theory computations with dispersion corrections (DFT-D) were performed to investigate the dihalogen interactions and their effect on the electronic band structures of halogenated (fluorinated and chlorinated) BN bilayers and aligned halogen-passivated zigzag BN nanoribbons (BNNRs). Our results reveal the presence of considerable homo-halogen (FF and ClCl) interactions in bilayer fluoro (chloro)-BN sheets and the aligned F (Cl)-ZBNNRs, as well as substantial hetero-halogen (FCl) interactions in hybrid fluoro-BN/chloro-BN bilayer and F-Cl-ZBNNRs. The existence of interfacial dihalogen interactions leads to significant band-gap modifications for the studied BN nanosystems. Compared with the individual fluoro (chloro)-BN monolayers or pristine BNNRs, the gap reduction in bilayer fluoro-BN (B-FF-N array), hybrid fluoro-BN/chloro-BN bilayer (N-FCl-N array), aligned Cl-ZBNNRs (B-ClCl-N alignment), and hybrid F-Cl-ZBNNRs (B-FCl-N alignment) is mainly due to interfacial polarizations, while the gap narrowing in bilayer chloro-BN (N-ClCl-N array) is ascribed to the interfacial nearly-free-electron states. Moreover, the binding strengths and electronic properties of the interactive BN nanosheets and nanoribbons can be controlled by applying an external electric field, and extensive modulation from large-gap to medium-gap semiconductors, or even metals can be realized by adjusting the direction and strength of the applied electric field. This interesting strategy for band gap control based on weak interactions offers unique opportunities for developing BN nanoscale electronic devices.
Low-frequency band gaps in chains with attached non-linear oscillators
DEFF Research Database (Denmark)
Lazarov, Boyan Stefanov; Jensen, Jakob Søndergaard
2007-01-01
in structures with periodic or random inclusions are located mainly in the high frequency range, as the wavelength has to be comparable with the distance between the alternating parts. Band gaps may also exist in structures with locally attached oscillators. In the linear case the gap is located around......The aim of this article is to investigate the wave propagation in one-dimensional chains with attached non-linear local oscillators by using analytical and numerical models. The focus is on the influence of non-linearities on the filtering properties of the chain in the low frequency range...
Image-potential band-gap narrowing at a metal/semiconductor interface
2001-01-01
GW approximation is used to systematically revisit the image-potential band-gap narrowing at metal/semiconductor interfaces proposed by Inkson in the 1970's. Here we have questioned how the narrowing as calculated from quasi-particle energy spectra for the jellium/Si interface depends on $r_s$ of the jellium. The gap narrowing is found to only weakly depend on $r_s$ (i.e., narrowing $\\simeq 0.3$ eV even for a large $r_s = 6)$. Hence we can turn to smaller polarizability in the semiconductor s...
Strong interaction of a transmon qubit with 1D band-gap medium
Liu, Yanbing; Sadri, Darius; Houck, Andrew; Bronn, Nicholas; Chow, Jerry; Gambetta, Jay
2015-03-01
The spontaneous emission of an atom will be enhanced or suppressed in a structured vacuum, commonly known as Purcell effect. Moreover, in a frequency gap medium, an atom-photon bound state is predicted to exist in the band gap, causing the localization of light. Here using the technology of circuit quantum electrodynamics, we experimentally explore this mechanism by fabricating a microwave step-impedance filter strongly coupled to a transmon qubit. Standard transmission and spectroscopy measurements support the existence of atom-photon bound states in the system. Correlation measurement shows that the atom-photon interaction induces strong correlation of the transmitted light through the system. Thanks support from IARPA
Two-dimensional microwave band-gap structures of different dielectric materials
Indian Academy of Sciences (India)
E D V Nagesh; G Santosh Babu; V Subramanian; V Sivasubramanian; V R K Murthy
2005-12-01
We report the use of low dielectric constant materials to form two-dimensional microwave band-gap structures for achieving high gap-to-midgap ratio. The variable parameters chosen are the lattice spacing and the geometric structure. The selected geometries are square and triangular and the materials chosen are PTFE ( = 2.1), PVC ( = 2.38) and glass ( = 5.5). Using the plane-wave expansion method, proper lattice spacing is selected for each structure and material. The observed experimental results are analyzed with the help of the theoretical prediction.
Theoretical aspects of photonic band gap in 1D nano structure of LN: MgLN periodic layer
Energy Technology Data Exchange (ETDEWEB)
Sisodia, Namita, E-mail: namitasisodiya@gmail.com [Department of Physics, Holkar Science Collage, Indore-452017 (India)
2015-06-24
By using the transfer matrix method, we have analyzed the photonic band gap properties in a periodic layer of LN:MgLN medium. The Width of alternate layers of LN and MgLN is in the range of hundred nanometers. The birefringent and ferroelectric properties of the medium (i.e ordinary, extraordinary refractive indices and electric dipole moment) is given due considerations in the formulation of photonic band gap. Effect of electronic transition dipole moment of the medium on photonic band gap is also taken into account. We find that photonic band gap can be modified by the variation in the ratio of the width of two medium. We explain our findings by obtaining numerical values and the effect on the photonic band gap due to variation in the ratio of alternate medium is shown graphically.
Institute of Scientific and Technical Information of China (English)
ZHANG Yan; SHI Jun-Jie
2008-01-01
A two-dimensional photonic crystal model with a periodic square dielectric background is proposed.The photonic band modulation effects due to the two-dimensional periodic background are investigated jn detail.It is found that periodic modulation of the dielectric background greatly alters photonic band structures,especially for the Epolarization modes.The number,width and position of the photonic band gaps sensitively depend on the dielectric constants of the two-dimensional periodic background.Complete band gaps are found,and the dependence of the widths of these gaps on the structural and material parameters of the two alternating rods/holes is studied.
Institute of Scientific and Technical Information of China (English)
无
2010-01-01
Absolute band gaps of a two-dimensional triangular-lattice photonic crystal are calculated with the finite-difference time-domain method in this paper.Through calculating the photonic band structures of the triangular-lattice photonic crystal consisting of Ge rods immersed in air with different shapes,it is found that a large absolute band gap of 0.098 (2c/a) can be obtained for the structures with hollow triangular Ge rods immersed in air,corresponding to 19.8% of the middle frequency.The influence of the different factors on the width of the absolute band gaps is also discussed.
Directory of Open Access Journals (Sweden)
Jia Li
2015-11-01
Full Text Available The Heusler alloy Ti2CrGe is a stable L21 phase with antiferromagnetic ordering. With band-gap energy (∼ 0.18 eV obtained from a first-principles calculation, it belongs to the group of narrow band gap semiconductor. The band-gap energy decreases with increasing lattice compression and disappears until a strain of −5%; moreover, gap contraction only occurs in the spin-down states, leading to half-metallic character at the −5% strain. The Ti1, Ti2, and Cr moments all exhibit linear changes in behavior within strains of −5%– +5%. Nevertheless, the total zero moment is robust for these strains. The imaginary part of the dielectric function for both up and down spin states shows a clear onset energy, indicating a corresponding electronic gap for the two spin channels.
2005-01-01
We calculate the Coulomb interaction induced density, temperature and magnetization dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor GaMnAs in the optimally-doped metallic regime as a function of carrier density and temperature. We find a large (about 0.1 eV) band gap renormalization which is enhanced by the ferromagnetic transition. We also calculate the impurity scattering effect on the gap narrowing. We suggest that the temperature, magnetization, an...
DEFF Research Database (Denmark)
Svane, Axel; Christensen, Niels Egede; Gorczyca, I.
2010-01-01
on the basis of the local approximation to density functional theory, although generally overestimated by 0.2–0.3 eV in comparison with experimental gap values. Details of the electronic energies and the effective masses including their pressure dependence are compared with available experimental information....... The band gap of InGaN2 is considerably smaller than what would be expected by linear interpolation implying a significant band gap bowing in InGaN alloys....
Light-gated single CdSe nanowire transistor: photocurrent saturation and band gap extraction
Energy Technology Data Exchange (ETDEWEB)
Zhang, Yang, E-mail: yangzh08@gmail.com; Chakraborty, Ritun; Kudera, Stefan; Krahne, Roman, E-mail: roman.krahne@iit.it [Istituto Italiano di Tecnologia, Nanochemistry department (Italy)
2015-11-15
CdSe nanowires are popular building blocks for many optoelectronic devices mainly owing to their direct band gap in the visible range of the spectrum. Here we investigate the optoelectronic properties of single CdSe nanowires fabricated by colloidal synthesis, in terms of their photocurrent–voltage characteristics and photoconductivity spectra recorded at 300 and 18 K. The photocurrent is identified as the secondary photocurrent, which gives rise to a photoconductive gain of ∼35. We observe a saturation of the photocurrent beyond a certain voltage bias that can be related to the finite drift velocity of electrons. From the photoconductivity spectra, we determine the band gap energy of the nanowires as ∼1.728 eV, and we resolve low-energy peaks that can be associated with sub-bandgap states.Graphical Abstract.
Thermal tuning the reversible optical band gap of self-assembled polystyrene photonic crystals
Vakili Tahami, S. H.; Pourmahdian, S.; Shirkavand Hadavand, B.; Azizi, Z. S.; Tehranchi, M. M.
2016-11-01
Nano-sized polymeric colloidal particles could undergo self-organization into three-dimensional structures to produce desired optical properties. In this research, a facile emulsifier-free emulsion polymerization method was employed to synthesize highly mono-disperse sub-micron polystyrene colloids. A high quality photonic crystal (PhC) structure was prepared by colloidal polystyrene. The reversible thermal tuning effect on photonic band gap position as well as the attenuation of the band gap was investigated in detail. The position of PBG can be tuned from 420 nm to 400 nm by varying the temperature of the PhC structure, reversibly. This reversible effect provides a reconfigurable PhC structure which could be used as thermo-responsive shape memory polymers.
Magneto-resistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys
Das, Diptasikha; Malik, K.; Bandyopadhyay, S.; Das, D.; Chatterjee, S.; Banerjee, Aritra
2014-08-01
We report magneto-resistive properties of direct and indirect band gap Bismuth-Antimony (Bi-Sb) alloys. Band gap increases with magnetic field. Large positive magnetoresistance (MR) approaching to 400% is observed. Low field MR experiences quadratic growth and at high field it follows a nearly linear behavior without sign of saturation. Carrier mobility extracted from low field MR data depicts remarkable high value of around 5 m2V-1s-1. Correlation between MR and mobility is revealed. We demonstrate that the strong nearly linear MR at high field can be well understood by classical method, co-build by Parish and Littlewood, Nature 426, 162 (2003) and Phys. Rev. B 72, 094417 (2005).
Energy Band Gap Study of Semiconducting Single Walled Carbon Nanotube Bundle
Elkadi, Asmaa; Decrossas, Emmanuel; El-Ghazaly, Samir
2013-01-01
The electronic properties of multiple semiconducting single walled carbon nanotubes (s-SWCNTs) considering various distribution inside a bundle are studied. The model derived from the proposed analytical potential function of the electron density for an individual s-SWCNT is general and can be easily applied to multiple nanotubes. This work demonstrates that regardless the number of carbon nanotubes, the strong coupling occurring between the closest neighbours reduces the energy band gap of the bundle by 10%. As expected, the coupling is strongly dependent on the distance separating the s-SWCNTs. In addition, based on the developed model, it is proposed to enhance this coupling effect by applying an electric field across the bundle to significantly reduce the energy band gap of the bundle by 20%.
Very low band gap thiadiazoloquinoxaline donor-acceptor polymers as multi-tool conjugated polymers.
Steckler, Timothy T; Henriksson, Patrik; Mollinger, Sonya; Lundin, Angelica; Salleo, Alberto; Andersson, Mats R
2014-01-29
Here we report on the synthesis of two novel very low band gap (VLG) donor-acceptor polymers (Eg ≤ 1 eV) and an oligomer based on the thiadiazoloquinoxaline acceptor. Both polymers demonstrate decent ambipolar mobilities, with P1 showing the best performance of ∼10(-2) cm(2) V(-1) s(-1) for p- and n-type operation. These polymers are among the lowest band gap polymers (≲0.7 eV) reported, with a neutral λmax = 1476 nm (P2), which is the farthest red-shifted λmax reported to date for a soluble processable polymer. Very little has been done to characterize the electrochromic aspects of VLG polymers; interestingly, these polymers actually show a bleaching of their neutral absorptions in the near-infrared region and have an electrochromic contrast up to 30% at a switching speed of 3 s.
Energy Band Gap Study of Semiconducting Single Walled Carbon Nanotube Bundle
Elkadi, Asmaa; Decrossas, Emmanuel; El-Ghazaly, Samir
2013-01-01
The electronic properties of multiple semiconducting single walled carbon nanotubes (s-SWCNTs) considering various distribution inside a bundle are studied. The model derived from the proposed analytical potential function of electron density for na individual s-SWCNT is general and can be easily applied to multiple nanotubes. This work demonstrates that regardless the number of carbon nanotubes, the strong coupling occurring between the closet neighbors reduces the energy band gap of the bundle by 10%. As expected, the coupling is strongly dependent on the distance separating the s-SWCNTs. In addition, based on the developed model, it is proposed to enhance this coupling effect by applying an electric field across the bundle to significantly reduce the energy band gap of the bundle by 20%.
Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes
Directory of Open Access Journals (Sweden)
E. Kasper
2012-01-01
Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.
Intrinsic magnetism and spontaneous band gap opening in bilayer silicene and germanene.
Wang, Xinquan; Wu, Zhigang
2017-01-18
It has been long sought to create magnetism out of simple non-magnetic materials, such as silicon and germanium. Here we show that intrinsic magnetism exists in bilayer silicene and germanene with no need to cut, etch, or dope. Unlike bilayer graphene, strong covalent interlayer bonding formed in bilayer silicene and germanene breaks the original π-bonding network of each layer, leaving the unbonded electrons unpaired and localized to carry magnetic moments. These magnetic moments then couple ferromagnetically within each layer while antiferromagnetically across two layers, giving rise to an infinite magnetic sheet with structural integrity and magnetic homogeneity. Furthermore, this unique magnetic ordering results in fundamental band gaps of 0.55 eV and 0.32 eV for bilayer silicene and germanene, respectively. The integration of intrinsic magnetism and spontaneous band gap opening makes bilayer silicene and germanene attractive for future nanoelectronics as well as spin-based computation and data storage.
LC Filter Design for Wide Band Gap Device Based Adjustable Speed Drives
DEFF Research Database (Denmark)
Vadstrup, Casper; Wang, Xiongfei; Blaabjerg, Frede
2014-01-01
the LC filter with a higher cut off frequency and without damping resistors. The selection of inductance and capacitance is chosen based on capacitor voltage ripple and current ripple. The filter adds a base load to the inverter, which increases the inverter losses. It is shown how the modulation index......This paper presents a simple design procedure for LC filters used in wide band gap device based adjustable speed drives. Wide band gap devices offer fast turn-on and turn-off times, thus producing high dV/dt into the motor terminals. The high dV/dt can be harmful for the motor windings and bearings...... affects the capacitor capacitor and the inverter current....
Institute of Scientific and Technical Information of China (English)
Yongjun He(何拥军); Zhongchao Wei(韦中超); Yongchun Zhong(钟永春); Jianwei Diao(刁建伟); Hezhou Wang(汪河洲)
2004-01-01
Experimental results demonstrate that the band gap of colloidal suspension crystal changes with both the thickness of crystal and the dispersity of micro-spheres.As the thickness decreases,a red shift of band gap is observed,and there is a maximum of red shift.The values of the maximum red shifts are dependent on the standard deviations of micro-spheres.The experimental results are consistent with theoretical calculation.As the colloidal suspension crystal is assembled from micro-spheres with a standard deviation of 8.4% in a thick cell,an incident angles independent broadband is observed,which is explained as an amorphous structure.Two amorphous models are discussed.
Fabrication of Ceramic Layer-by-Layer Infrared Wavelength Photonic Band Gap Crystals
Energy Technology Data Exchange (ETDEWEB)
Kang, Henry Hao-Chuan [Iowa State Univ., Ames, IA (United States)
2004-12-19
Photonic band gap (PBG) crystals, also known as photonic crystals, are periodic dielectric structures which form a photonic band gap that prohibit the propagation of electromagnetic (EM) waves of certain frequencies at any incident angles. Photonic crystals have several potential applications including zero-threshold semiconductor lasers, the inhibition of spontaneous emission, dielectric mirrors, and wavelength filters. If defect states are introduced in the crystals, light can be guided from one location to another or even a sharp bending of light in micron scale can be achieved. This generates the potential for optical waveguide and optical circuits, which will contribute to the improvement in the fiber-optic communications and the development of high-speed computers.
Coupled-mode theory for photonic band-gap inhibition of spatial instabilities.
Gomila, Damià; Oppo, Gian-Luca
2005-07-01
We study the inhibition of pattern formation in nonlinear optical systems using intracavity photonic crystals. We consider mean-field models for singly and doubly degenerate optical parametric oscillators. Analytical expressions for the new (higher) modulational thresholds and the size of the "band gap" as a function of the system and photonic crystal parameters are obtained via a coupled-mode theory. Then, by means of a nonlinear analysis, we derive amplitude equations for the unstable modes and find the stationary solutions above threshold. The form of the unstable mode is different in the lower and upper parts of the band gap. In each part there is bistability between two spatially shifted patterns. In large systems stable wall defects between the two solutions are formed and we provide analytical expressions for their shape. The analytical results are favorably compared with results obtained from the full system equations. Inhibition of pattern formation can be used to spatially control signal generation in the transverse plane.
Cherenkov oscillator operating at the second band gap of leakage waveguide structures
Jang, Kyu-Ha; Park, Seong Hee; Lee, Kitae; Jeong, Young Uk
2016-10-01
An electromagnetic wave source operating around second band gaps of metallic grating structures is presented. The considered metallic grating structures are not perfect periodic but inhomogeneously structured within a period to have a second band gap where the wavelength is equal to the period of the structures. The radiation mechanism by an electron beam in the structures is different from the well-known Smith-Purcell radiation occurring in perfect periodic grating structures. That is, the radiating wave has a single frequency and the radiation is unidirectional. When the energy of the electron beam is synchronized at the standing wave point in the dispersion curves, strong interaction happens and coherent radiation perpendicular to the grating surface is generated with relatively lower starting oscillation current.
Cherenkov oscillator operating at the second band gap of leakage waveguide structures
Directory of Open Access Journals (Sweden)
Kyu-Ha Jang
2016-10-01
Full Text Available An electromagnetic wave source operating around second band gaps of metallic grating structures is presented. The considered metallic grating structures are not perfect periodic but inhomogeneously structured within a period to have a second band gap where the wavelength is equal to the period of the structures. The radiation mechanism by an electron beam in the structures is different from the well-known Smith-Purcell radiation occurring in perfect periodic grating structures. That is, the radiating wave has a single frequency and the radiation is unidirectional. When the energy of the electron beam is synchronized at the standing wave point in the dispersion curves, strong interaction happens and coherent radiation perpendicular to the grating surface is generated with relatively lower starting oscillation current.
On the wavelength dependence of femtosecond laser interactions inside band gap solids
Leyder, S.; Grojo, D.; Delaporte, Ph.; Lebugle, M.; Marine, W.; Sanner, N.; Sentis, M.; Utéza, O.
2013-03-01
3D laser microfabrication inside narrow band gap solids like semiconductors will require the use of long wavelength intense pulses. We perform an experimental study of the multiphoton-avalanche absorption yields and thresholds with tightly focused femtosecond laser beams at wavelengths: 1.3μm and 2.2μm. For comparisons, we perform the experiments in two very different materials: silicon (semiconductor, ˜1.1 eV indirect bandgap) and fused silica (dielectric, ˜9 eV direct bandgap). For both materials, we find only moderate differences while the number of photons required to cross the band gap changes from 2 to 3 in silicon and from 10 to 16 in fused silica.
Directory of Open Access Journals (Sweden)
Amir Reza Sadrolhosseini
2016-01-01
Full Text Available A polypyrrole-nanoparticles reduced graphene oxide nanocomposite layer was prepared using electrochemical method. The prepared samples were characterized using Fourier transform infrared spectroscopy, field emission scanning electron microscopy, and UV-visible spectroscopy. The band gap of nanocomposite layers was calculated from UV-visible spectra and the thermal diffusivity of layers was measured using a photoacoustic technique. As experimental results, the optical band gap was in the range between 3.580 eV and 3.853 eV, and thermal diffusivity was increased with increasing the layer thickness from 2.873 cm2/s to 12.446 cm2/s.
Microwave irradiation induced band gap tuning of MoS2-TiO2 nanocomposites
Shakya, Jyoti; Mohanty, T.
2016-05-01
The MoS2-TiO2 nanocomposites have been synthesized by sol-gel method and characterized by different microscopic and spectroscopic techniques. The crystallinity of these nanocomposites has been confirmed by X-ray diffraction (XRD) analysis. The Raman spectrum of MoS2-TiO2 nanocomposites consists of three distinct peaks (E1 g, E1 2g and A1g) which are associated with TiO2 and MoS2. The morphological study is carried out by scanning electron microscope. The effect of microwave irradiation on the band gap of MoS2-TiO2 nanocomposites has been investigated; it is observed that the microwave irradiation causes decrease in the band gap of MoS2-TiO2 nanocomposites. The microwave treated MoS2-TiO2 thin films offers a novel process route in treating thin films for commercial applications.
On the Integration of Wide Band-gap Semiconductors in Single Phase Boost PFC Converters
DEFF Research Database (Denmark)
Hernandez Botella, Juan Carlos
Power semiconductor technology has dominated the evolution of switched mode power supplies (SMPS). Advances in silicon (Si) technology, as the introduction of metal oxide field effect transistor (MOSFET), isolated gate bipolar transistors (IGBT), superjunction vertical structures and Schottky...... compared to Si semiconductors. Moreover, both semiconductor materials are particularly interesting for high temperature operation. These characteristics makes integration of SiC and GaN devices as the next logical step to further increase efficiency and power density in SMPS. This work is part of the Ph......D project “Single phase PFC converter using wide band-gap devices” and focuses on attainable advantages by introducing wide band-gap semiconductors, and more particularly GaN devices in power factor correction circuits (PFC). First, an overview of current state-of-the-art semiconductor technology in the 600...
Vivas C., H.; Vargas-Hernández, C.
2012-06-01
Optical constants, reflectivity response and direct band gap energy (Egd) were calculated and simulated by developing an electrodynamic-based model for a three medium system, namely vacuum/ferroelectric film/metallic substrate. Depolarization effects due to the contact between the metallic substrate and the FE film, as well as the spatially dependent profile of the dielectric susceptibility ε(z) enter into the formalism by adapting the phenomenological Landau-Ginzburg-Devonshire theory (LGD). Absorption coefficient is obtained from the Lambert-Beer-Bouguer (LBB) approximation and the direct band gap energy as a function of the characteristic length is calculated by using the general Tauc power law. Numerical simulations lead to range of values for tunable Egd from 2.6 to 2.8 eV for characteristic lengths up to 30% the thickness of the film, in concordance with recent reports.
Multiband frequency-reconfigurable antenna using metamaterial structure of electromagnetic band gap
Dewan, Raimi; Rahim, M. K. A.; Himdi, Mohamed; Hamid, M. R.; Majid, H. A.; Jalil, M. E.
2017-01-01
A metamaterial of electromagnetic band gap (EBG) is incorporated to an antenna for frequency reconfigurability is proposed. The EBG consists of two identical unit cells that provide multiple band gaps at 1.88-1.94, 2.25-2.44, 2.67-2.94, 3.52-3.54, and 5.04-5.70 GHz with different EBG configurations. Subsequently, the antenna is incorporated with EBG. The corresponding incorporated structure successfully achieves various reconfigurable frequencies at 1.60, 1.91, 2.41, 3.26, 2.87, 5.21, and 5.54 GHz. The antenna has the potential to be implemented for Bluetooth, Wi-Fi, WiMAX, LTE, and cognitive radio applications.
Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide
Li, Yongfeng
2013-04-29
As a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.
Band gap tuning of armchair silicene nanoribbons using periodic hexagonal holes
Energy Technology Data Exchange (ETDEWEB)
Mehdi Aghaei, Sadegh; Calizo, Irene, E-mail: icalizo@fiu.edu [Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174 (United States)
2015-09-14
The popularity of graphene owing to its unique and exotic properties has triggered a great deal of interest in other two-dimensional nanomaterials. Among them silicene shows considerable promise for electronic devices with a carrier mobility comparable to graphene, flexible buckled structure, and expected compatibility with silicon electronics. Using first-principle calculations based on density functional theory, the electronic properties of armchair silicene nanoribbons perforated with periodic nanoholes (ASiNRPNHs) are investigated. Two different configurations of mono-hydrogenated (:H) and di-hydrogenated (:2H) silicene edges are considered. Pristine armchair silicene nanoribbons (ASiNRs) can be categorized into three branches with width W = 3P − 1, 3P, and 3P + 1, P is an integer. The order of their energy gaps change from “E{sub G} (3P − 1) < E{sub G} (3P) < E{sub G} (3P + 1)” for W-ASiNRs:H to “E{sub G} (3P + 1) < E{sub G} (3P − 1) < E{sub G} (3P)” for W-ASiNRs:2H. We found the band gaps of W-ASiNRs:H and (W + 2)-ASiNRs:2H are slightly different, giving larger band gaps for wider ASiNRs:2H. ASiNRPNHs' band gaps changed based on the nanoribbon's width, nanohole's repeat periodicity and position relative to the nanoribbon's edge compared to pristine ASiNRs because of changes in quantum confinement strength. ASiNRPNHs:2H are more stable than ASiNRPNHs:H and their band gaps are noticeably greater than ASiNRPNHs:H. We found that the value of energy band gap for 12-ASiNRPNHs:2H with repeat periodicity of 2 is 0.923 eV. This value is about 2.2 times greater than pristine ASiNR:2H and double that of the 12-ASiNRPNHs:H with repeat periodicity of 2.
Theoretical study on the two-band degenerate-gaps superconductors: Application to SrPt3P
Huang, Hai; Hou, Li-Chao; Zhao, Bin-Peng
2016-09-01
We study the magnetic properties of two-band degenerate-gaps superconductors with two-band isotropic Ginzburg-Landau theory. The exact solutions of upper critical field and London penetration depth are obtained, and the calculations reproduce the experimental data of the recently observed superconducting crystal SrPt3P in a broad temperature range. It directly underlies that SrPt3P is a multi-band superconductor with equal gaps in two Fermi surface sheets.
Energy Technology Data Exchange (ETDEWEB)
Morales-Acevedo, Arturo [CINVESTAV del IPN, Electrical Engineering Department, Avenida IPN No. 2508, 07360 Mexico, D. F. (Mexico)
2009-01-15
A simple model for the generation of carriers by photons incident on a (linearly) decreasing band-gap material, such as has been described in recent CIGS solar cells, is developed. The model can be generalized for different cases such as increasing band-gap grading or for having a more complex band-gap profile. The model developed for direct band semiconductors such as CIGS or AlGaAs allows us to define an effective absorption coefficient, so that the ideal photocurrent density can be calculated in a similar manner as for solar cells with non-graded band-gap materials. We show that this model gives completely different results as those expected from intuitive approaches for calculating this ideal photocurrent density. We also show that grading of the band-gap of the absorbing material in solar cells makes the photocurrent less sensitive to the total band-gap change, in such a way that the design of the band-gap variation can be more flexible in order to have other advantages such as higher built-in voltage or higher back surface field in the device structure. (author)
Short pulse equations and localized structures in frequency band gaps of nonlinear metamaterials
Energy Technology Data Exchange (ETDEWEB)
Tsitsas, N.L. [School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Zografos, Athens 15773 (Greece); Horikis, T.P. [Department of Mathematics, University of Ioannina, Ioannina 45110 (Greece); Shen, Y.; Kevrekidis, P.G.; Whitaker, N. [Department of Mathematics and Statistics, University of Massachusetts, Amherst, MA 01003-4515 (United States); Frantzeskakis, D.J., E-mail: dfrantz@phys.uoa.g [Department of Physics, University of Athens, Panepistimiopolis, Zografos, Athens 157 84 (Greece)
2010-03-01
We consider short pulse propagation in nonlinear metamaterials characterized by a weak Kerr-type nonlinearity in their dielectric response. Two short-pulse equations (SPEs) are derived for the high- and low-frequency 'band gaps' (where linear electromagnetic waves are evanescent) with linear effective permittivity epsilon<0 and permeability mu>0. The structure of the solutions of the SPEs is also briefly discussed, and connections with the soliton solutions of the nonlinear Schroedinger equation are made.
Band gap tunning in BN-doped graphene systems with high carrier mobility
Kaloni, T. P.
2014-02-17
Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.
Optical band gap and magnetic properties of unstrained EuTiO3 films
Lee, J. H.; Ke, X.; Podraza, N. J.; Kourkoutis, L. Fitting; Heeg, T.; Roeckerath, M.; Freeland, J. W.; Fennie, C. J.; Schubert, J.; Muller, D. A.; Schiffer, P.; Schlom, D. G.
2009-05-01
Phase-pure, stoichiometric, unstrained, epitaxial (001)-oriented EuTiO3 thin films have been grown on (001) SrTiO3 substrates by reactive molecular-beam epitaxy. Magnetization measurements show antiferromagnetic behavior with TN=5.5 K, similar to bulk EuTiO3. Spectroscopic ellipsometry measurements reveal that EuTiO3 films have a direct optical band gap of 0.93±0.07 eV.
Designer disordered complex media : hyperuniform photonic and phononic band gap materials.
Amoah, T. K.
2016-01-01
In this thesis we investigate designer disordered complex media for photonics and phononics applications. Initially we focus on the photonic properties and we analyse hyperuniform disordered structures (HUDS) using numerical simulations. Photonic HUDS are a new class of photonic solids, which display large, isotropic photonic band gaps (PBG) comparable in size to the ones found in photonic crystals (PC). We review their complex interference properties, including the origin of PBGs and potent...
Dispersion characteristics of a slow wave structure with a modified photonic band gap
Institute of Scientific and Technical Information of China (English)
Gao Xi; Yang Zi-Qiang; Cao Wei-Ping; Jiang Yan-Nan
2011-01-01
This paper studies the dispersion characteristics of a modified photonic band-gap slow-wave structure with an open boundary by simulation and experiment. A mode launcher with a wheel radiator and a coupling probe is presented to excite a pure TM01-like mode. The cold test and simulation results show that the TM01-like mode is effectively excited and no parasitic modes appear. The dispersion characteristics obtained from the cold test are in good agreement with the calculated results.
Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes
2012-01-01
Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is ...
Simulation Analysis of a Strip Dipole Excited Electromagnetic Band-Gap (EBG) Structure
2015-07-01
that the phase of the scattered near fields at the EBG surface is more applicable to characterizing the EBG for antenna applications. A new set of...number of unit cells is also demonstrated. 15. SUBJECT TERMS electromagnetic band gap, strip dipole, reflection phase, vias, near fields, bandwidth...Image Theory Approximation 10 2.4 The Periodic Boundary Condition (PBC) Approach 11 2.5 The Phase of the Near Electric Field (NEF) 12 3. Analysis of an
Band-gaps electromagnéticos con celdas unidad de tres dieléctricos
Gómez Gómez, Álvaro; Herrán Planchuelo, Jaime; Cordobés Gallo, David; Vegas García, Ángel; Saiz Ipiña, Juan Antonio; Solano Vérez, Miguel Ángel; Lakhtakia, Akhlesh
2004-01-01
Electromagnetic band-gap structures (EBG) with Kronig-Penney morphology implemented inside rectangular waveguides are theoretically and experimentally examined using a unit cell with three dielectrics. Filtering properties of these structures are analysed, invoking the Floquet theorem for ideal structures (infinite in the propagation direction), and by means of the scattering matrix technique for real structures (i.e., of finite length). Measurements of the transmis...
Thiophene-fused tetracene diimide with low band gap and ambipolar behavior
Ye, Qun
2011-11-18
The first tetracene diimide derivative fused with four thiophene rings, TT-TDI, was synthesized by an FeCl3 mediated oxidative cyclodehydrogenation reaction. TT-TDI exhibited a low band gap of 1.52 eV and amphoteric redox behavior. TT-TDI also showed a liquid crystalline property and ambipolar charge transport in thin film field-effect transistors. © 2011 American Chemical Society.
Zhang, Qiang; Han, Dezhuan; Qin, Fei Fei; Zhang, Xiao Ming; Yao, Yong
2015-01-01
We propose a multiscale spoof-insulator-spoof (SIS) waveguide by introducing periodic geometry modulation in the wavelength scale to a SIS waveguide made of perfect electric conductor. The MSIS consists of multiple SIS subcells. The dispersion relationship of the fundamental guided mode of the spoof surface plasmon polaritons (SSPPs) is studied analytically within the small gap approximation. It is shown that the multiscale SIS possesses microwave band gap (MBG) due to the Bragg scattering. The "gap maps" in the design parameter space are provided. We demonstrate that the geometry of the subcells can efficiently adjust the effective refraction index of the elementary SIS and therefore further control the width and the position of the MBG. The results are in good agreement with numerical calculations by the finite element method (FEM). For finite-sized MSIS of given geometry in the millimeter scale, FEM calculations show that the first-order symmetric SSPP mode has zero transmission in the MBG within frequency...
Tunable band gaps in acoustic metamaterials with periodic arrays of resonant shunted piezos
Chen, Sheng-Bing; Wen, Ji-Hong; Wang, Gang; Wen, Xi-Sen
2013-07-01
Periodic arrays of resonant shunted piezoelectric patches are employed to control the wave propagation in a two-dimensional (2D) acoustic metamaterial. The performance is characterized by the finite element method. More importantly, we propose an approach to solving the conventional issue of the nonlinear eigenvalue problem, and give a convenient solution to the dispersion properties of 2D metamaterials with periodic arrays of resonant shunts in this article. Based on this modeling method, the dispersion relations of a 2D metamaterial with periodic arrays of resonant shunted piezos are calculated. The results show that the internal resonances of the shunting system split the dispersion curves, thereby forming a locally resonant band gap. However, unlike the conventional locally resonant gap, the vibrations in this locally resonant gap are unable to be completely localized in oscillators consisting of shunting inductors and piezo-patches.
Effect of band gap narrowing on GaAs tunnel diode I-V characteristics
Lebib, A.; Hannanchi, R.; Beji, L.; EL Jani, B.
2016-12-01
We report on experimental and theoretical study of current-voltage characteristics of C/Si-doped GaAs tunnel diode. For the investigation of the experimental data, we take into account the band-gap narrowing (BGN) effect due to heavily-doped sides of the tunnel diode. The BGN of the n- and p-sides of tunnel diode was measured by photoluminescence spectroscopy. The comparison between theoretical results and experimental data reveals that BGN effect enhances tunneling currents and hence should be considered to identify more accurately the different transport mechanisms in the junction. For C/Si-doped GaAs tunnel diode, we found that direct tunneling is the dominant transport mechanism at low voltages. At higher voltages, this mechanism is replaced by the rate-controlling tunneling via gap states in the forbidden gap.
Tunable band gaps in acoustic metamaterials with periodic arrays of resonant shunted piezos
Institute of Scientific and Technical Information of China (English)
Chen Sheng-Bing; Wen Ji-Hong; Wang Gang; Wen Xi-Sen
2013-01-01
Periodic arrays of resonant shunted piezoelectric patches are employed to control the wave propagation in a twodimensional (2D) acoustic metamaterial.The performance is characterized by the finite element method.More importantly,we propose an approach to solving the conventional issue of the nonlinear eigenvalue problem,and give a convenient solution to the dispersion properties of 2D metamaterials with periodic arrays of resonant shunts in this article.Based on this modeling method,the dispersion relations of a 2D metamaterial with periodic arrays of resonant shunted piezos are calculated.The results show that the internal resonances of the shunting system split the dispersion curves,thereby forming a locally resonant band gap.However,unlike the conventional locally resonant gap,the vibrations in this locally resonant gap are unable to be completely localized in oscillators consisting of shunting inductors and piezo-patches.
Quantum confinement induced band gaps in MgB2 nanosheets
Xu, Bo Z.; Beckman, Scott P.
2016-09-01
The discovery of two-dimensional semiconducting materials, a decade ago, spawned an entire sub-field within solid-state physics that is focused on the development of nanoelectronics. Here we present a new class of semiconducting two-dimensional material based on hexagonal MgB2. Although MgB2 is a semimetal, similar to the other well-studied transition metal diborides, we demonstrate that, unlike the transition metal diborides, thinning MgB2, to create nanosheets, opens a band gap in the density of states. We predict that a 7 Å thick MgB2 nanosheet will have a band gap of 0.51 eV. MgB2 nanosheets differ from other two-dimensional semiconductors in that the band gap is introduced by (001) surfaces and is opened by the quantum confinement effect. The implications of these findings are that nanostructured MgB2 is not merely a new composition, but also has intrinsic mechanisms for tuning its electronic properties, which may facilitate the development of nanoelectronics.
Wang, Zhiguo; Ullah, Zakir; Gao, Mengqin; Zhang, Dan; Zhang, Yiqi; Gao, Hong; Zhang, Yanpeng
2015-09-09
Optical transistor is a device used to amplify and switch optical signals. Many researchers focus on replacing current computer components with optical equivalents, resulting in an optical digital computer system processing binary data. Electronic transistor is the fundamental building block of modern electronic devices. To replace electronic components with optical ones, an equivalent optical transistor is required. Here we compare the behavior of an optical transistor with the reflection from a photonic band gap structure in an electromagnetically induced transparency medium. A control signal is used to modulate the photonic band gap structure. Power variation of the control signal is used to provide an analogy between the reflection behavior caused by modulating the photonic band gap structure and the shifting of Q-point (Operation point) as well as amplification function of optical transistor. By means of the control signal, the switching function of optical transistor has also been realized. Such experimental schemes could have potential applications in making optical diode and optical transistor used in quantum information processing.
Franklin, S.; Balasubramanian, T.; Nehru, K.; Kim, Youngmee
2009-06-01
The crystal structure of the title rac-propranolol salt, CHNO2+·NO3-, consists of two protonated propranolol residues and nitrate anions. Three virtually flat fragments, characteristics of most of the β-adrenolytics with oxy-methylene bridge are present in both the cations (A and B). The plane of the propranolol chain is twisted with respect to the plane of the aromatic ring in both the cations. Present study investigates the conformation and hydrogen bonding interactions, which play an important role in biological functions. A gauche conformation is observed for the oxo-methylene bridge of cation A, while a trans conformation prevails in cation B. These conformations are found in majority of β-blockers. Presence of twenty intermolecular hydrogen bonds mediating through the anions stabilizes the crystal packing. Vibration analysis and earlier theoretical predictions complement the structure analysed. From the UV-Vis spectral analysis for the crystal, the optical band gap is found to be Eg = 5.12 eV, where as the chloride salt has Eg = 3.81 eV. The increase in the band gap may be attributed by the increase in the number of intermolecular hydrogen bonds. Good optical transmittance in the entire visible region and the direct band gap property suggest that it is a suitable candidate for optical applications in UV region.
Experimental and theoretical investigation of relative optical band gaps in graphene generations
Bhatnagar, Deepika; Singh, Sukhbir; Yadav, Sriniwas; Kumar, Ashok; Kaur, Inderpreet
2017-01-01
Size and chemical functionalization dependant optical band gaps in graphene family nanomaterials were investigated by experimental and theoretical study using Tauc plot and density functional theory (DFT). We have synthesized graphene oxide through a modified Hummer’s method using graphene nanoplatelets and sequentially graphene quantum dots through hydrothermal reduction. The experimental results indicate that the optical band gap in graphene generations was altered by reducing the size of graphene sheets and attachment of chemical functionalities like epoxy, hydroxyl and carboxyl groups plays a crucial role in varying optical band gaps. It is further confirmed by DFT calculations that the π orbitals were more dominatingly participating in transitions shown by projected density of states and the molecular energy spectrum represented the effect of attached functional groups along with discreteness in energy levels. Theoretical results were found to be in good agreement with experimental results. All of the above different variants of graphene can be used in native or modified form for sensor design and optoelectronic applications.
Analysis of band gap of non-bravais lattice photonic crystal fiber
Institute of Scientific and Technical Information of China (English)
Yichao MA; Heming CHEN
2009-01-01
This article designs a novel type ofnon-bravais lattice photonic crystal fiber. To form the nesting complexperiod with positive and negative refractive index materials respectively, a cylinder with the same radius and negative refractive index is introduced into the center of each lattice unit cell in the traditional square lattice air-holes photonic crystal fiber. The photonic band-gap of the photonic crystal fiber is calculated numerically by the plane wave expansion method. The result shows that compared with the traditional square photonic band-gap fiber (PBGF),when R/A is 0.35, the refractive index of the substrate, airhole, and medium-column are 1.30, 1.0, and -1.0,respectively. This new PBGF can transmit signal by the photonic band-gap effect. When the lattice constant Λvaries from 1.5 μm to 3.0 μm, the range of the wavelength ranges from 880 nm to 2300 nm.
Mechanical Properties of a Library of Low-Band-Gap Polymers
DEFF Research Database (Denmark)
Roth, Bérenger; Savagatrup, Suchol; de los Santos, Nathaniel V.
2016-01-01
The mechanical properties of low-band-gap polymers are important for the long-term survivability of roll to-roll processed organic electronic devices. Such devices, e.g., solar cells, displays, and thin-film transistors, must survive the rigors of roll-to-roll coating and also thermal and mechani......The mechanical properties of low-band-gap polymers are important for the long-term survivability of roll to-roll processed organic electronic devices. Such devices, e.g., solar cells, displays, and thin-film transistors, must survive the rigors of roll-to-roll coating and also thermal...... and mechanical forces in the outdoor environment and in stretchable and ultraflexible form factors. This paper measures the stiffness (tensile modulus), ductility (crack-onset strain), or both of a combinatorial library of 51 low-band-gap polymers. The purpose of this study is to systematically screen a library...... of an isolated molecule only partially determines the mechanical properties another important codeterminant is the packing structure some general trends can be identified. (1) Fused rings tend to increase the modulus and decrease the ductility. (2) Branched side chains have the opposite effect. Despite...
Photonic band-gap properties for two-component slow light
Ruseckas, J; Juzeliunas, G; Unanyan, R G; Otterbach, J; Fleischhauer, M
2011-01-01
We consider two-component "spinor" slow light in an ensemble of atoms coherently driven by two pairs of counterpropagating control laser fields in a double tripod-type linkage scheme. We derive an equation of motion for the spinor slow light (SSL) representing an effective Dirac equation for a massive particle with the mass determined by the two-photon detuning. By changing the detuning the atomic medium acts as a photonic crystal with a controllable band gap. If the frequency of the incident probe light lies within the band gap, the light tunnels through the sample. For frequencies outside the band gap, the transmission probability oscillates with increasing length of the sample. In both cases the reflection takes place into the complementary mode of the probe field. We investigate the influence of the finite excited state lifetime on the transmission and reflection coefficients of the probe light. We discuss possible experimental implementations of the SSL using alkali atoms such as Rubidium or Sodium.
Band gap calculation and photo catalytic activity of rare earths doped rutile TiO2
Institute of Scientific and Technical Information of China (English)
BIAN Liang; SONG Mianxin; ZHOU Tianliang; ZHAO Xiaoyong; DAI Qingqing
2009-01-01
The density of states (DOS) of 17 kinds of rare earths (RE) doped futile TiO2 was by using fast-principles density functional the-ory (DFF) calculation. The band gap widths of RE doped rutile TiO2 were important factors for altering their absorbing wavelengths. The results show that RE ions could obviously reduce the band gap widths and form of energy of rutile TiO2 except Lu, Y, Yb and Sc, and the order of absorbing wavelengths of RE doped rutile TiO2 were the same as that of the results of calculation. The ratio of RE dopant was an-other important factor for the photo catalytic activity of RE doped rutile TiO2, and there was an optimal ratio of dopant. There was a constant for predigesting the calculation difficulty, respectively, which were 0.5mol.% and 100 mol-1 under supposition. The band gap widths of RE doped rutile TiO2 by DFT calculation were much larger than that by experiment. Finally, by transferring the calculation values to experiment values, it could be found and predicted that RE enlarged obviously the absorbing wavelengh of futile TiO2. In addition, the degree of RE ions edging out the Ti atom using the parameters of RE elements was computed.
Kulak, A. I.; Bondarava, G. V.; Shchurevich, O. A.
2013-07-01
The band gap of the ensemble of oligoene clusters formed by thermocatalytic decomposition of polyvinyl alcohol is parametrized using optical absorption spectra. A band gap energy of E gm =1.53 ± 0.02 eV at the end of an infinite polyene chain is found by extrapolating the energies of π → π* transitions in clusters with a number of double bonds varying from 4 to 12. This value is close to the band gap of trans-polyacetylene and the lower bound for the Tauc energy E gT =1.50 eV, which characterizes the minimum interband transition energy. E gT is essentially independent of the concentration of oligoene clusters, which is determined by the concentration of the AlCl3 thermal decomposition catalyst. The Urbach energy determined from the long wavelength edge of the spectrum falls from 2.21 to 0.66 eV as the AlCl3 concentration is raised from 11.1 to 41.7 mmol per mol of polyvinyl alcohol structural units.
Tuning the electronic band-gap of fluorinated 3C-silicon carbide nanowires
Miranda Durán, Álvaro; Trejo Baños, Alejandro; Pérez, Luis Antonio; Cruz Irisson, Miguel
The possibility of control and modulation of the electronic properties of silicon carbide nanowires (SiCNWs) by varying the wire diameter is well known. SiCNWs are particularly interesting and technologically important, due to its electrical and mechanical properties, allowing the development of materials with specific electronic features for the design of stable and robust electronic devices. Tuning the band gap by chemical surface passivation constitutes a way for the modification of the electronic band gap of these nanowires. We present, the structural and electronic properties of fluorinated SiCNWs, grown along the [111] crystallographic direction, which are investigated by first principles. We consider nanowires with six diameters, varying from 0.35 nm to 2.13 nm, and eight random covering schemes including fully hydrogen- and fluorine terminated ones. Gibbs free energy of formation and electronic properties were calculated for the different surface functionalization schemes and diameters considered. The results indicate that the stability and band gap of SiCNWs can be tuned by surface passivation with fluorine atoms This work was supported by CONACYT infrastructure project 252749 and UNAM-DGAPA-PAPIIT IN106714. A.M. would like to thank for financial support from CONACyT-Retención. Computing resources from proyect SC15-1-IR-27 of DGTIC-UNAM are acknowledged.
Optical band gap energy and ur bach tail of CdS:Pb2+ thin films
Energy Technology Data Exchange (ETDEWEB)
Chavez, M.; Juarez, H.; Pacio, M. [Universidad Autonoma de Puebla, Instituto de Ciencias, Centro de Investigacion en Dispositivos Semiconductores, Av. 14 Sur, Col. Jardines de San Manuel, Ciudad Universitaria, Puebla, Pue. (Mexico); Gutierrez, R.; Chaltel, L.; Zamora, M.; Portillo, O. [Universidad Autonoma de Puebla, Facultad de Ciencias Quimicas, Laboratorio de Materiales, Apdo. Postal 1067, 72001 Puebla, Pue. (Mexico); Mathew, X., E-mail: osporti@yahoo.mx [UNAM, Instituto de Energias Renovables, Temixco, Morelos (Mexico)
2016-11-01
Pb S-doped CdS nano materials were successfully synthesized using chemical bath. Transmittance measurements were used to estimate the optical band gap energy. Tailing in the band gap was observed and found to obey Ur bach rule. The diffraction X-ray show that the size of crystallites is in the ∼33 nm to 12 nm range. The peaks belonging to primary phase are identified at 2θ = 26.5 degrees Celsius and 2θ = 26.00 degrees Celsius corresponding to CdS and Pb S respectively. Thus, a shift in maximum intensity peak from 2θ = 26.4 to 28.2 degrees Celsius is clear indication of possible transformation of cubic to hexagonal phase. Also peaks at 2θ = 13.57, 15.9 degrees Celsius correspond to lead perchlorate thiourea. The effects on films thickness and substrate doping on the band gap energy and the width on tail were investigated. Increasing doping give rise to a shift in optical absorption edge ∼0.4 eV. (Author)
Numerical modelling of Mars supersonic disk-gap-band parachute inflation
Gao, Xinglong; Zhang, Qingbin; Tang, Qiangang
2016-06-01
The transient dynamic behaviour of supersonic disk-gap-band parachutes in a Mars entry environment involving fluid structure interactions is studied. Based on the multi-material Arbitrary Lagrange-Euler method, the coupling dynamic model between a viscous compressible fluid and a flexible large deformation structure of the parachute is solved. The inflation performance of a parachute with a fixed forebody under different flow conditions is analysed. The decelerating parameters of the parachute, including drag area, opening loads, and coefficients, are obtained from the supersonic wind tunnel test data from NASA. Meanwhile, the evolution of the three-dimensional shape of the disk-gap-band parachute during supersonic inflation is presented, and the structural dynamic behaviour of the parachute is predicted. Then, the influence of the presence of the capsule on the flow field of the parachute is investigated, and the wake of unsteady fluid and the distribution of shock wave around the supersonic parachute are presented. Finally, the structural dynamic response of the canopy fabric under high-pressure conditions is comparatively analysed. The results show that the disk-gap-band parachute is well inflated without serious collapse. As the Mach numbers increase from 2.0 to 2.5, the drag coefficients gradually decrease, along with a small decrease in inflation time, which corresponds with test results, and proves the validity of the method proposed in this paper.
Ahn, SeJin; Jung, Sunghun; Gwak, Jihye; Cho, Ara; Shin, Keeshik; Yoon, Kyunghoon; Park, Doyoung; Cheong, Hyeonsik; Yun, Jae Ho
2010-07-01
We demonstrate experimental data to elucidate the reason for the discrepancies of reported band gap energy (Eg) of Cu2ZnSnSe4 (CZTSe) thin films, i.e., 1.0 or 1.5 eV. Eg of the coevaporated CZTSe film synthesized at substrate temperature (Tsub) of 370 °C, which was apparently phase pure CZTSe confirmed by x-ray diffraction (XRD) and Raman spectroscopy, is found to be around 1 eV regardless of the measurement techniques. However, depth profile of the same sample reveals the formation of ZnSe at CZTSe/Mo interface. On the other hand, Eg of the coevaporated films increases with Tsub due to the ZnSe formation, from which we suggest that the existence of ZnSe, which is hardly distinguishable from CZTSe by XRD, is the possible reason for the overestimation of overall Eg.
Engineers and the Web: an analysis of real life gaps in information usage
Kraaijenbrink, Jeroen
2007-01-01
Engineers face a wide range of gaps when trying to identify, acquire, and utilize information from the Web. To be able to avoid creating such gaps, it is essential to understand them in detail. This paper reports the results of a study of the real life gaps in information usage processes of 17 engin
A generation/recombination model assisted with two trap centers in wide band-gap semiconductors
Yamaguchi, Ken; Kuwabara, Takuhito; Uda, Tsuyoshi
2013-03-01
A generation/recombination (GR) model assisted with two trap centers has been proposed for studying reverse current on pn junctions in wide band-gap semiconductors. A level (Et1) has been assumed to be located near the bottom of the conduction band and the other (Et2) to be near the top of the valence band. The GR model has been developed by assuming (1) a high-electric field; F, (2) a short distance; d, between trap centers, (3) reduction in an energy-difference; Δeff = |Et1 - Et2| - eFd, and (4) hopping or tunneling conductions between trap centers with the same energy-level (Δeff ≈ 0). The GR rate has been modeled by trap levels, capture cross-sections, trap densities, and transition rate between trap centers. The GR rate, about 1010 greater than that estimated from the single-level model, has been predicted on pn junctions in a material with band-gap of 3.1 eV. Device simulations using the proposed GR model have been demonstrated for SiC diodes with and without a guard ring. A reasonable range for reverse current at room temperature has been simulated and stable convergence has been obtained in a numerical scheme for analyzing diodes with an electrically floating region.
Reflectivity calculated for a 3D silicon photonic band gap crystal with finite support
Devashish, D; van der Vegt, J J W; Vos, Willem L
2016-01-01
We study numerically the reflectivity of three-dimensional (3D) photonic crystals with a complete 3D photonic band gap, with the aim to interpret recent experiments. We employ the finite element method to study crystals with the cubic diamond-like inverse woodpile structure. The high-index backbone has a dielectric function similar to silicon. We study crystals with a range of thicknesses up to ten unit cells ($L \\leq 10 c$). The crystals are surrounded by vacuum, and have a finite support as in experiments. The polarization-resolved reflectivity spectra reveal Fabry-P{\\'e}rot fringes related to standing waves in the finite crystal, as well as broad stop bands with nearly $100~\\%$ reflectivity, even for thin crystals. From the strong reflectivity peaks, it is inferred that the maximum reflectivity observed in experiments is not limited by finite size. The frequency ranges of the stop bands are in excellent agreement with stop gaps in the photonic band structure, that pertain to infinite and perfect crystals. ...
Band-gaps in long Josephson junctions with periodic phase-shifts
Ahmad, Saeed; Susanto, Hadi; Wattis, Jonathan A. D.
2017-04-01
We investigate analytically and numerically a long Josephson junction on an infinite domain, having arbitrary periodic phase shift of κ, that is, the so-called 0-κ long Josephson junction. The system is described by a one-dimensional sine-Gordon equation and has relatively recently been proposed as artificial atom lattices. We discuss the existence of periodic solutions of the system and investigate their stability both in the absence and presence of an applied bias current. We find critical values of the phase-discontinuity and the applied bias current beyond which static periodic solutions cease to exist. Due to the periodic discontinuity in the phase, the system admits regions of allowed and forbidden bands. We perturbatively investigate the Arnold tongues that separate the region of allowed and forbidden bands, and discuss the effect of an applied bias current on the band-gap structure. We present numerical simulations to support our analytical results.
Increased visible-light photocatalytic activity of TiO2 via band gap manipulation
Pennington, Ashley Marie
Hydrogen gas is a clean burning fuel that has potential applications in stationary and mobile power generation and energy storage, but is commercially produced from non-renewable fossil natural gas. Using renewable biomass as the hydrocarbon feed instead could provide sustainable and carbon-neutral hydrogen. We focus on photocatalytic oxidation and reforming of methanol over modified titanium dioxide (TiO2) nanoparticles to produce hydrogen gas. Methanol is used as a model for biomass sugars. By using a photocatalyst, we aim to circumvent the high energy cost of carrying out endothermic reactions at commercial scale. TiO2 is a semiconductor metal oxide of particular interest in photocatalysis due to its photoactivity under ultraviolet illumination and its stability under catalytic reaction conditions. However, TiO2 primarily absorbs ultraviolet light, with little absorption of visible light. While an effective band gap for absorbance of photons from visible light is 1.7 eV, TiO2 polymorphs rutile and anatase, have band gaps of 3.03 eV and 3.20 eV respectively, which indicate ultraviolet light. As most of incident solar radiation is visible light, we hypothesize that decreasing the band gap of TiO2 will increase the efficiency of TiO2 as a visible-light active photocatalyst. We propose to modify the band gap of TiO2 by manipulating the catalyst structure and composition via metal nanoparticle deposition and heteroatom doping in order to more efficiently utilize solar radiation. Of the metal-modified Degussa P25 TiO2 samples (P25), the copper and nickel modified samples, 1%Cu/P25 and 1%Ni/P25 yielded the lowest band gap of 3.05 eV each. A difference of 0.22 eV from the unmodified P25. Under visible light illumination 1%Ni/P25 and 1%Pt/P25 had the highest conversion of methanol of 9.9% and 9.6%, respectively.
Institute of Scientific and Technical Information of China (English)
DING Chun-Ling; LI Jia-Hua; YANG Xiao-Xue
2011-01-01
The probe absorption-dispersion spectra of a radio-frequency (RF)-driven five-level atom embedded in a photonic crystal are investigated by considering the isotropic double-band photonic-band-gap (PBG) reservoir. In the model used, the two transitions are, respectively, coupled by the upper and lower bands in such a PBG material, thus leading to some curious phenomena. Numerical simulations are performed for the optical spectra. It is found that when one transition frequency is inside the band gap and the other is outside the gap, there emerge three peaks in the absorption spectra. However, for the case that two transition frequencies lie inside or outside the band gap, the spectra display four absorption profiles. Especially, there appear two sharp peaks in the spectra when both transition frequencies exist inside the band gap. The influences of the intensity and frequency of the RF-driven field on the absorptive and dispersive response are analyzed under different band-edge positions. It is found that a transparency window appears in the absorption spectra and is accompanied by a very steep variation of the dispersion profile by adjusting system parameters. These results show that the absorption-dispersion properties of the system depend strongly on the RFinduced quantum interference and the density of states (DOS) of the PBG reservoir.
Band gap opening in strongly compressed diamond observed by x-ray energy loss spectroscopy
Energy Technology Data Exchange (ETDEWEB)
Gamboa, E. J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Fletcher, L. B. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Lee, H. J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); MacDonald, M. J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Univ. of Michigan, Ann Arbor, MI (United States); Zastrau, U. [High-Energy Density Science Group, Hamburg (Germany); Gauthier, M. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Gericke, D. O. [Univ. of Warwick (United Kingdom); Vorberger, J. [Helmholtz Association of German Research Centres, Dresden (Germany); Granados, E. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Hastings, J. B. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Glenzer, S. H. [SLAC National Accelerator Lab., Menlo Park, CA (United States)
2016-01-25
The extraordinary mechanical and optical properties of diamond are the basis of numerous technical applications and make diamond anvil cells a premier device to explore the high-pressure behavior of materials. However, at applied pressures above a few hundred GPa, optical probing through the anvils becomes difficult because of the pressure-induced changes of the transmission and the excitation of a strong optical emission. Such features have been interpreted as the onset of a closure of the optical gap in diamond, and can significantly impair spectroscopy of the material inside the cell. In contrast, a comparable widening has been predicted for purely hydrostatic compressions, forming a basis for the presumed pressure stiffening of diamond and resilience to the eventual phase change to BC8. We here present the first experimental evidence of this effect at geo-planetary pressures, exceeding the highest ever reported hydrostatic compression of diamond by more than 200 GPa and any other measurement of the band gap by more than 350 GPa. We here apply laser driven-ablation to create a dynamic, high pressure state in a thin, synthetic diamond foil together with frequency-resolved x-ray scattering as a probe. The frequency shift of the inelastically scattered x-rays encodes the optical properties and, thus, the behavior of the band gap in the sample. Using the ultra-bright x-ray beam from the Linac Coherent Light Source (LCLS), we observe an increasing direct band gap in diamond up to a pressure of 370 GPa. This finding points to the enormous strains in the anvils and the impurities in natural Type Ia diamonds as the source of the observed closure of the optical window. Our results demonstrate that diamond remains an insulating solid to pressures approaching its limit strength.
New Insights on the Burstein-Moss Shift and Band Gap Narrowing in Indium-Doped Zinc Oxide Thin Films
2015-01-01
The Burstein-Moss shift and band gap narrowing of sputtered indium-doped zinc oxide (IZO) thin films are investigated as a function of carrier concentrations. The optical band gap shifts below the carrier concentration of 5.61 × 1019 cm-3 are well-described by the Burstein-Moss model. For carrier concentrations higher than 8.71 × 1019 cm-3 the shift decreases, indicating that band gap narrowing mechanisms are increasingly significant and are competing with the Burstein-Moss effect. The incorp...
Froufe-Pérez, Luis S; Damasceno, Pablo F; Muller, Nicolas; Haberko, Jakub; Glotzer, Sharon C; Scheffold, Frank
2016-01-01
We study photonic band gap formation in two-dimensional high refractive index disordered ma- terials where the dielectric structure is derived from packing disks in real and reciprocal space. Numerical calculations of the photonic density of states demonstrate the presence of a band gap for all polarizations in both cases. We find that the band gap width is controlled by the increase in positional correlation inducing short-range order and hyperuniformity concurrently. Our findings suggest that the optimization of short-range order, in particular the tailoring of Bragg scattering at the isotropic Brillouin zone, are of key importance for designing disordered PBG materials.
Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys
2011-01-01
For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio is miscible and thermodynamically stable. In most cases the band gap does not vary linearly with...
Kalathil, Shafeer; Khan, Mohammad Mansoob; Ansari, Sajid Ali; Lee, Jintae; Cho, Moo Hwan
2013-07-21
We report a simple biogenic-route to narrow the band gap of TiO2 nanocrystals for visible light application by offering a greener method. When an electrochemically active biofilm (EAB) was challenged with a solution of Degussa-TiO2 using sodium acetate as the electron donor, greyish blue-colored TiO2 nanocrystals were obtained. A band gap study showed that the band gap of the modified TiO2 nanocrystals was significantly reduced (E(g) = 2.85 eV) compared to the unmodified white Degussa TiO2 (E(g) = 3.10 eV).
Chemically induced electric field: flat band potential engineering
Bak, T.; Guo, Z.; Li, W.; Atanacio, A. J.; Nowotny, J.
2012-10-01
The present work considers engineering of the flat band potential, FBP, of metal oxides in a controlled manner. The aim is to minimise the energy losses related to recombination. The related experimental approaches include imposition of a chemically-induced electric field using the phenomena of segregation, diffusion and the formation of multilayer systems. This paper considers several basic phenomena that allow the modification of the surface charge and the space charge at the gas/solid and solid/liquid interfaces.
Engineering Design of a Multipurpose X-band Accelerating Structure
Gudkov, Dmitry; Samoshkin, Alexander; Zennaro, Riccardo; Dehler, Micha; Raguin, Jean-Yves
2010-01-01
Both FEL projects, SwissFEL and Fermi-Elettra each require an X-band RF accelerating structure for optimal bunch compression at the respective injectors. As the CLIC project is pursuing a program for producing and testing the X-band high-gradient RF structures, a collaboration between PSI, Elettra and CERN has been established to build a multipurpose X-band accelerating structure. This paper focuses on its engineering design, which is based on the disked cells jointed together by diffusion bonding. Vacuum brazing and laser beam welding is used for auxiliary components. The accelerating structure consists of two coupler subassemblies, 73 disks and includes a wakefield monitor and diagnostic waveguides. The engineering study includes the external cooling system, consisting of two parallel cooling circuits and an RF tuning system, which allows phase advance tuning of the cell by deforming the outer wall. The engineering solution for the installation and sealing of the wake field monitor feed-through devices that...
Photonic band-gap formation by optical-phase-mask lithography.
Chan, Timothy Y M; Toader, Ovidiu; John, Sajeev
2006-04-01
We demonstrate an approach for fabricating photonic crystals with large three-dimensional photonic band gaps (PBG's) using single-exposure, single-beam, optical interference lithography based on diffraction of light through an optical phase mask. The optical phase mask (OPM) consists of two orthogonally oriented binary gratings joined by a thin, solid layer of homogeneous material. Illuminating the phase mask with a normally incident beam produces a five-beam diffraction pattern which can be used to expose a suitable photoresist and produce a photonic crystal template. Optical-phase-mask Lithography (OPML) is a major simplification from the previously considered multibeam holographic lithography of photonic crystals. The diffracted five-beam intensity pattern exhibits isointensity surfaces corresponding to a diamondlike (face-centered-cubic) structure, with high intensity contrast. When the isointensity surfaces in the interference patterns define a silicon-air boundary in the resulting photonic crystal, with dielectric contrast 11.9 to 1, the optimized PBG is approximately 24% of the gap center frequency. The ideal index contrast for the OPM is in the range of 1.7-2.3. Below this range, the intensity contrast of the diffraction pattern becomes too weak. Above this range, the diffraction pattern may become too sensitive to structural imperfections of the OPM. When combined with recently demonstrated polymer-to-silicon replication methods, OPML provides a highly efficient approach, of unprecedented simplicity, for the mass production of large-scale three-dimensional photonic band-gap materials.
Simplification of QPLDA: A practical method to the correction for the LDA band gap problem
Kikuchi, Akihito
2012-01-01
It is necessary to employ quasi-particle calculations to correct band gap problems in LDA. As an expedient way for the reliable but massive GWA, Quasi-Particle-LDA (QPLDA) is proposed by several authors, where the total computational cost scales with N. Historically, Sham and Kohn introduced the idea of the local mass operator based on local wavenumber similar to WKB, but did not execute actual numerical calculations. They took into account exchange interaction only, from which we could not expect precise treatments anyway. Later, Pickett and Wang had proposed a more qualitative method and had shown its potentiality in examples of semiconductors, such as silicon, diamond and GaP. They used a model analytic formula for the dialectic function and adopted a model energy dispersion, which is free-electron like one, except that, being accompanied with an artificial band-gap discontinuity. The latter method has two shortcomings. First, to execute the calculation, several parameters are needed, such as the macroscop...
A novel Ka-band coaxial transit-time oscillator with a four-gap buncher
Energy Technology Data Exchange (ETDEWEB)
Song, Lili; He, Juntao; Ling, Junpu [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)
2015-05-15
A novel Ka-band coaxial transit-time oscillator (TTO) with a four-gap buncher is proposed and investigated. Simulation results show that an output power of 1.27 GW and a frequency of 26.18 GHz can be achieved with a diode voltage of 447 kV and a beam current of 7.4 kA. The corresponding power efficiency is 38.5%, and the guiding magnetic field is 0.6 T. Studies and analysis indicate that a buncher with four gaps can modulate the electron beam better than the three-gap buncher in such a Ka-band TTO. Moreover, power efficiency increases with the coupling coefficient between the buncher and the extractor. Further simulation demonstrates that power efficiency can reach higher than 30% with a guiding magnetic field of above 0.5 T. Besides, the power efficiency exceeds 30% in a relatively large range of diode voltage from 375 kV to 495 kV.
Nanoscale Imaging of Band Gap and Defects in Polycrystalline CdTe Photovoltaic Devices
Zhitenev, Nikolai; Yoon, Yohan; Chae, Jungseok; Katzenmeyer, Aaron; Yoon, Heayoung; An, Sangmin; Shumacher, Joshua; Centrone, Andrea
To further increase the power efficiency of polycrystalline thin film photovoltaic (PV) technology, a detailed understanding of microstructural properties of the devices is required. In this work, we investigate the microstructure of CdTe PV devices using two optical spectroscopies. Sub-micron thickness lamella samples were cut out from a PV device, either in cross-section or in-plane, by focused ion beam. The first technique is the photothermal induced resonance (PTIR) used to obtain absorption spectra over a broad range of wavelengths. In PTIR, a wavelength tunable pulsed laser is combined with an atomic force microscope to detect the local thermal expansion of lamella CdTe sample induced by light absorption. The second technique based on a near-field scanning optical microscope maps the local absorption at fixed near-IR wavelengths with energies at or below CdTe band-gap energy. The variation of the band gap throughout the CdTe absorber determined from PTIR spectra is ~ 20 meV. Both techniques detect strong spatial variation of shallow defects over different grains. The spatial distribution of mid-gap defects appears to be more uniform. The resolution, the sensitivity and the applicability of these two approaches are compared.
Band Gap Opening Induced by the Structural Periodicity in Epitaxial Graphene Buffer Layer.
N Nair, Maya; Palacio, Irene; Celis, Arlensiú; Zobelli, Alberto; Gloter, Alexandre; Kubsky, Stefan; Turmaud, Jean-Philippe; Conrad, Matthew; Berger, Claire; de Heer, Walter; Conrad, Edward H; Taleb-Ibrahimi, Amina; Tejeda, Antonio
2017-04-12
The epitaxial graphene buffer layer on the Si face of hexagonal SiC shows a promising band gap, of which the precise origin remains to be understood. In this work, we correlate the electronic to the atomic structure of the buffer layer by combining angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and high-resolution scanning transmission electron microscopy (HR-STEM). We show that the band structure in the buffer has an electronic periodicity related to the structural periodicity observed in STM images and published X-ray diffraction. Our HR-STEM measurements show the bonding of the buffer layer to the SiC at specific locations separated by 1.5 nm. This is consistent with the quasi 6 × 6 periodic corrugation observed in the STM images. The distance between buffer C and SiC is 1.9 Å in the bonded regions and up to 2.8 Å in the decoupled regions, corresponding to a 0.9 Å corrugation of the buffer layer. The decoupled regions are sp(2) hybridized. Density functional tight binding (DFTB) calculations demonstrate the presence of a gap at the Dirac point everywhere in the buffer layer, even in the decoupled regions where the buffer layer has an atomic structure close to that of graphene. The surface periodicity also promotes band in the superperiodic Brillouin zone edges as seen by photoemission and confirmed by our calculations.
Relationship between quantum speed limit time and memory time in a photonic-band-gap environment
Wang, J.; Wu, Y. N.; Mo, M. L.; Zhang, H. Z.
2016-12-01
Non-Markovian effect is found to be able to decrease the quantum speed limit (QSL) time, and hence to enhance the intrinsic speed of quantum evolution. Although a reservoir with larger degree of non-Markovianity may seem like it should cause smaller QSL times, this seemingly intuitive thinking may not always be true. We illustrate this by investigating the QSL time of a qubit that is coupled to a two-band photonic-band-gap (PBG) environment. We show how the QSL time is influenced by the coherent property of the reservoir and the band-gap width. In particular, we find that the decrease of the QSL time is not attributed to the increasing non-Markovianity, while the memory time of the environment can be seen as an essential reflection to the QSL time. So, the QSL time provides a further insight and sharper identification of memory time in a PBG environment. We also discuss a feasible experimental realization of our prediction.
Wen, Feng; David, Sylvain; Checoury, Xavier; El Kurdi, Moustafa; Boucaud, Philippe
2008-08-04
Photonic crystals exhibiting a photonic band gap in both TE and TM polarizations are particularly interesting for a better control of light confinement. The simultaneous achievement of large band gaps in both polarizations requires to reduce the symmetry properties of the photonic crystal lattice. In this letter, we propose two different designs of two-dimensional photonic crystals patterned in high refractive index thin silicon slabs. These slabs are known to limit the opening of photonic band gaps for both polarizations. The proposed designs exhibit large complete photonic band gaps: the first photonic crystal structure is based on the honey-comb lattice with two different hole radii and the second structure is based on a "tri-ellipse" pattern in a triangular lattice. Photonic band gap calculations show that these structures offer large complete photonic band gaps deltaomega/omega larger than 10% between first and second photonic bands. This figure of merit is obtained with single-mode slab waveguides and is not restricted to modes below light cone.
Effect of band-gap narrowing on the built-in electric field in n-type silicon
Geist, J.; Lowney, J. R.
1981-02-01
A relation is derived to describe the change in the built-in electric field in an n-type semiconductor due to band tailing and carrier freeze-out, as well as band-gap narrowing. Recent numerical models of these various phenomena were used to illustrate the effect on heavily doped n-type silicon. While neither band-gap narrowing, band tailing, nor deionization alone is sufficient to explain the large decrease in the built-in electric field that has been inferred from experimental measurements, the combination of all three effects may be sufficient.
A model for the direct-to-indirect band-gap transition in monolayer MoSe2 under strain
Indian Academy of Sciences (India)
Ruma Das; Priya Mahadevan
2015-06-01
A monolayer of MoSe2 is found to be a direct band-gap semiconductor. We show, within ab-initio electronic structure calculations, that a modest biaxial tensile strain of 3% can drive it into an indirect band-gap semiconductor with the valence band maximum (VBM) shifting from point to point. An analysis of the charge density reveals that while Mo–Mo interactions contribute to the VBM at 0% strain, Mo–Se interactions contribute to the highest occupied band at point. A scaling of the hopping interaction strengths within an appropriate tight binding model can capture the transition.
Development of wide-band gap indium gallium nitride solar cells for high-efficiency photovoltaics
Jani, Omkar K.
Main objective of the present work is to develop wide-band gap InGaN solar cells in the 2.4--2.9 eV range that can be an integral component of photovoltaic devices to achieve efficiencies greater than 50%. The III-nitride semiconductor material system, which consists of InN, GaN, AlN and their alloys, offers a substantial potential in developing ultra-high efficiency photovoltaics mainly due to its wide range of direct-band gap, and other electronic, optical and mechanical properties. However, this novel InGaN material system poses challenges from theoretical, as well as technological standpoints, which are further extended into the performance of InGaN devices. In the present work, these challenges are identified and overcome individually to build basic design blocks, and later, optimized comprehensively to develop high-performance InGaN solar cells. One of the major challenges from the theoretical aspect arises due to unavailability of a suitable modeling program for InGaN solar cells. As spontaneous and piezoelectric polarization can substantially influence transport of carriers in the III-nitrides, these phenomena are studied and incorporated at a source-code level in the PC1D simulation program to accurately model InGaN solar cells. On the technological front, InGaN with indium compositions up to 30% (2.5 eV band gap) are developed for photovoltaic applications by controlling defects and phase separation using metal-organic chemical vapor deposition. InGaN with band gap of 2.5 eV is also successfully doped to achieve acceptor carrier concentration of 1018 cm-3. A robust fabrication scheme for III-nitride solar cells is established to increase reliability and yield; various schemes including interdigitated grid contact and current spreading contacts are developed to yield low-resistance Ohmic contacts for InGaN solar cells. Preliminary solar cells are developed using a standard design to optimize the InGaN material, where the band gap of InGaN is progressively
Controllable Photonic Band Gap and Defect Mode in a 1D CO2-Laser Optical Lattice
Institute of Scientific and Technical Information of China (English)
ZHOU Qi; YIN Jian-Ping
2008-01-01
We Dropose a new method to form a novel controllable photonic crystal with cold atoms and study the photonic band gap(PBG)of an infinite 1D CO2-laser optical lattice of 85Rb atoms under the condition of quantum coherence.A significant gap generated near the resonant frequency of the atom is founded and its dependence on physical parameters is also discussed.Using the eigenquation of defect mode,we calculate the defect mode when a defect is introduced into such a lattice.Our study shows that the proposed new method can be used to optically probe optical lattice in situ and to design some novel and controllable photonic crystals.
Institute of Scientific and Technical Information of China (English)
Wang Gang; Liu Yao-Zong; Wen Ji-Hong; Yu Dian-Long
2006-01-01
The low-frequency band gap and the corresponding vibration modes in two-dimensional ternary locally resonant phononic crystals are restudied successfully with the lumped-mass method. Compared with the work of C. Goffaux and J. Sanchez-Dehesa (Phys. Rev. B 67 14 4301(2003)), it is shown that there exists an error of about 50% in their calculated results of the band structure, and one band is missing in their results. Moreover, the in-plane modes shown in their paper are improper, which results in the wrong conclusion on the mechanism of the ternary locally resonant phononic crystals. Based on the lumped-mass method and better description of the vibration modes according to the band gaps, the locally resonant mechanism in forming the subfrequency gaps is thoroughly analysed. The rule used to judge whether a resonant mode in the phononic crystals can result in a corresponding subfrequency gap is also verified in this ternary case.
Samokhvalova, Ksenia R; Liang Qian, Bao
2005-01-01
Dielectric photonic band gap (PBG) structures have many promising applications in laser acceleration. For these applications, accurate determination of fundamental and high order band gaps is critical. We present the results of our recent work on analytical calculations of two-dimensional (2D) PBG structures in rectangular geometry. We compare the analytical results with computer simulation results from the MIT Photonic Band Gap Structure Simulator (PBGSS) code, and discuss the convergence of the computer simulation results to the analytical results. Using the accurate analytical results, we design a mode-selective 2D dielectric cylindrical PBG cavity with the first global band gap in the frequency range of 8.8812 THz to 9.2654 THz. In this frequency range, the TM01-like mode is shown to be well confined.
Effect of ZnO on the physical properties and optical band gap of soda lime silicate glass.
Zaid, Mohd Hafiz Mohd; Matori, Khamirul Amin; Aziz, Sidek Hj Abdul; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd
2012-01-01
This manuscript reports on the physical properties and optical band gap of five samples of soda lime silicate (SLS) glass combined with zinc oxide (ZnO) that were prepared by a melting and quenching process. To understand the role of ZnO in this glass structure, the density, molar volume and optical band gaps were investigated. The density and absorption spectra in the Ultra-Violet-Visible (UV-Visible) region were recorded at room temperature. The results show that the densities of the glass samples increased as the ZnO weight percentage increased. The molar volume of the glasses shows the same trend as the density: the molar volume increased as the ZnO content increased. The optical band gaps were calculated from the absorption edge, and it was found that the optical band gap decreased from 3.20 to 2.32 eV as the ZnO concentration increased.
Effect of ZnO on the Physical Properties and Optical Band Gap of Soda Lime Silicate Glass
Directory of Open Access Journals (Sweden)
Mohd Sabri Mohd Ghazali
2012-06-01
Full Text Available This manuscript reports on the physical properties and optical band gap of five samples of soda lime silicate (SLS glass combined with zinc oxide (ZnO that were prepared by a melting and quenching process. To understand the role of ZnO in this glass structure, the density, molar volume and optical band gaps were investigated. The density and absorption spectra in the Ultra-Violet-Visible (UV-Visible region were recorded at room temperature. The results show that the densities of the glass samples increased as the ZnO weight percentage increased. The molar volume of the glasses shows the same trend as the density: the molar volume increased as the ZnO content increased. The optical band gaps were calculated from the absorption edge, and it was found that the optical band gap decreased from 3.20 to 2.32 eV as the ZnO concentration increased.
Effects of Controlling the AZO Thin Film's Optical Band Gap on AZO/MEH-PPV Devices with Buffer Layer
Directory of Open Access Journals (Sweden)
Jaehyoung Park
2012-01-01
Full Text Available Organic/inorganic hybrid solar cells were fabricated incorporating aluminum-doped zinc oxide (AZO thin films of varying optical band gap in AZO/poly(2-methoxy-5-(2′-ethyl-hexyloxy-p-phenylene vinylene structures. The band gaps were controlled by varying the flow rates of Ar and O2 used to deposit the AZO. Devices with CdS buffer layer were also fabricated for improved efficiency. The effects of AZO optical band gap were assessed by testing the I–V characteristics of devices with structures of glass/ITO/AZO/MEH-PPV/Ag under AM1.5 illumination (100 mW/cm2. Efficiency was improved about 30 times by decreasing the AZO optical band gap, except in devices deposited without oxygen. A power conversion efficiency of 0.102% was obtained with the incorporation of a CdS buffer layer.
Institute of Scientific and Technical Information of China (English)
Yuan Jin-Hui; Yu Chong-Xiu; Sang Xin-Zhu; Zhang Jin-Long; Zhou Gui-Yao; Li Shu-Guang; Hou Lan-Tian
2011-01-01
This paper investigates the guided-mode characteristics of hollow-core photonic band-gap fibre (HC-PBGF) with interstitial holes fabricated by an improved twice stack-and-draw technique at visible wavelengths. Based on the simulation model with interstitial holes, the influence of glass interstitial apexes on photonic band-gaps is discussed.The existing forms of guided-mode in part band gaps are shown by using the full-vector plane-wave method. In the experiment, the observed transmission spectrum corresponds to the part band gaps obtained by simulation. The fundamental and second-order guided-modes with mixture of yellow and green light are observed through choosing appropriate fibre length and adjusting coupling device. The loss mechanism of guided-modes in HC-PBGF is also discussed.
Band gap opening in silicene on MgBr2(0001) induced by Li and Na
Zhu, Jiajie
2014-11-12
Silicene consists of a monolayer of Si atoms in a buckled honeycomb structure and is expected to be well compatible with the current Si-based technology. However, the band gap is strongly influenced by the substrate. In this context, the structural and electronic properties of silicene on MgBr2(0001) modified by Li and Na are investigated by first-principles calculations. Charge transfer from silicene (substrate) to substrate (silicene) is found for substitutional doping (intercalation). As compared to a band gap of 0.01 eV on the pristine substrate, strongly enhanced band gaps of 0.65 eV (substitutional doping) and 0.24 eV (intercalation) are achieved. The band gap increases with the dopant concentration.
The study of the change in the optical band-gap of titania nanoparticles supported on silica
Directory of Open Access Journals (Sweden)
SH Nasirian
2013-09-01
Full Text Available In this letter, titania nanopowder and titania-silica nanocomposite were prepared using sol-gel method. Although the size of nanocrystallites and the mass fraction percent age of rutile phase ( after phase transformation were increased by increasing calcination in the two samples , their size in titania-silica nanocomposite was smaller than that in pure titania . Moreover, the calculations of the indirect optical band gap in the two samples show ed that by increasing temperature up to the transition onset point a nd above, the optical band gap had a steady growth and the corresponding wavelength reduced. However , a remarkable red shift in the indirect optical band gap was noticed in both samples around the transition onset point . The red shift was observed more in silica-titania nano composite than in titania nanopowder . In addition, the indirect band gap of silica-titania nano composite was less than that of pure titania in the same temperature conditions.
Depth-resolved band gap in Cu(In,Ga)(S,Se)2 thin films
Energy Technology Data Exchange (ETDEWEB)
Bar, M.; Nishiwaki, S.; Weinhardt, L.; Pookpanratana, S.; Fuchs, O.; Blum, M.; Yang, W.; Denlinger, J. D.; Shafarman, W.; Heske, C.
2008-06-24
The surface composition of Cu(In,Ga)(S,Se)2 (?CIGSSe?) thin films intrinsically deviates from the corresponding bulk composition, which also modifies the electronic structure and thus the optical properties.We have used a combination of photon and electron spectroscopies with different information depths to gain depth-resolved information on the band gap energy (Eg) in CIG(S)Se thin films. We find an increasing Eg with decreasing information depth, indicating the formation of a surface region with significantly higher Eg. This Eg-widened surface region extends further into the bulk of the sulfur-free CIGSe thin film compared to the CIGSSe thin film.
Complete Band Gaps for Lamb Waves in Cubic Thin Plates with Periodically Placed Inclusions
Institute of Scientific and Technical Information of China (English)
CHEN Jiu-Jiu; QIN Bo; CHENG Jian-Chun
2005-01-01
@@ We present a theoretical study for propagation of Lamb waves in cubic thin plates consisting of solid inclusions placed periodically in the host material. The dispersion curves of Lamb waves propagating parallel to the surfaces of the plates are calculated based on the plane wave expansion method for triangular lattices. We realize the existence of full band gaps in the systems composed of W cylinders embedded in a Si matrix with filling ratio f = 0.176 for different thickness ratios of h/a, where h is the plate thickness and a is the lattice spacing.
Incorporation of Furan into Low Band-Gap Polymers for Efficient Solar Cells
Woo, Claire H.
2010-11-10
The design, synthesis, and characterization of the first examples of furan-containing low band-gap polymers, PDPP2FT and PDPP3F, with substantial power conversion efficiencies in organic solar cells are reported. Inserting furan moieties in the backbone of the conjugated polymers enables the use of relatively small solubilizing side chains because of the significant contribution of the furan rings to overall polymer solubility in common organic solvents. Bulk heterojunction solar cells fabricated from furan-containing polymers and PC71BM as the acceptor showed power conversion efficiencies reaching 5.0%. © 2010 American Chemical Society.
Self-imaging effect in photonic crystal multimode waveguides exhibiting no band gaps
Institute of Scientific and Technical Information of China (English)
Tianbao Yu; Xiaoqing Jiang; Qinghua Liao; Wei Qi; Jianyi Yang; Minghua Wang
2007-01-01
The properties of the propagating field in multimode photonic crystal waveguides (PCWs) exhibiting no photonic band gaps (PBGs) are investigated. The transmission spectrum shows that the input field can be guided with high efficiency, and resemble index-guided modes owing to the combination of total internal reflection (TIR) and distributed Bragg reflection (DBR). Self-imaging effect happens and the filling fraction determines the beating lengths. The rows of air holes decide DBR coming from the mirrors on both sides of the guiding region, which governs the transmission spectrum. It provides a new way to realize the components for both polarizations by combining PBG and TIR effects in PCWs.
Direct space-time observation of pulse tunneling in an electromagnetic band gap
Doiron, Serge; Haché, Alain; Winful, Herbert G.
2007-08-01
We present space-time-resolved measurements of electromagnetic pulses tunneling through a coaxial electromagnetic band gap structure. The results show that during the tunneling process the field distribution inside the barrier is an exponentially decaying standing wave whose amplitude increases and decreases as it slowly follows the temporal evolution of the input pulse. At no time is a pulse maximum found inside the barrier, and hence the transmitted peak is not the incident peak that has propagated to the exit. The results support the quasistatic interpretation of tunneling dynamics and confirm that the group delay is not the traversal time of the input pulse peak.
Photonic Band Gaps in 3D Network Structures with Short-range Order
Liew, Seng Fatt; Noh, Heeso; Schreck, Carl F; Dufresne, Eric R; O'Hern, Corey S; Cao, Hui
2011-01-01
We present a systematic study of photonic band gaps (PBGs) in three-dimensional (3D) photonic amorphous structures (PAS) with short-range order. From calculations of the density of optical states (DOS) for PAS with different topologies, we find that tetrahedrally connected dielectric networks produce the largest isotropic PBGs. Local uniformity and tetrahedral order are essential to the formation of PBGs in PAS, in addition to short-range geometric order. This work demonstrates that it is possible to create broad, isotropic PBGs for vector light fields in 3D PAS without long-range order.
Liquid-crystal photonic-band-gap materials the tunable electromagnetic vacuum
Busch, K
1999-01-01
We demonstrate that when an optically birefringent nematic liquid crystal is infiltrated into the void regions of an inverse opal, photonic-band-gap (PBG) material, the resulting composite material exhibits a completely tunable PBG. $9 In particular, the three- dimensional PBG can be completely opened or closed by applying an electric field which rotates the axis of the nematic molecules relative to the inverse opal backbone. Tunable light localization effects may $9 be realized by controlling the orientational disorder in the nematic. (28 refs).
Giant Enhancement of Second Harmonic Generation at Photonic Band Gap Edges
Institute of Scientific and Technical Information of China (English)
MA Dong-Li; REN Ming-Liang; DOU Jun-Hong; LI Zhi-Yuan
2010-01-01
@@ Second harmonic generation(SHG)in one-dimensional nonlinear photonic crystals made from periodically alternating ferroelectric and dielectric layers is investigated by means of the transfer matrix method.When tunedat the photonic band gap(PBG)edges,the fundamental wave and second harmonic wave slow down,and the filed enhancement takes place within the nonlinear photonic crystal.The phase mismatching can be compensated for to some extent and the second harmonic process will be enhanced.Numerical results show that the enhancement of SHG in the PBG structure can be up to four orders of magnitude compared with the traditional quasi-phase-matching structure.
Continuous generation of Rubidium vapor in hollow-core photonic band-gap fibers
Donvalkar, Prathamesh S; Clemmen, Stephane; Gaeta, Alexander L
2015-01-01
We demonstrate high optical depths (50+/-5), lasting for hours in Rubidium-filled hollow-core photonic band-gap fibers, which represents a 1000X improvement over operation times previously reported. We investigate the vapor generation mechanism using both a continuous-wave and a pulsed light source and find that the mechanism for generating the Rubidium atoms is primarily due to thermal vaporization. Continuous generation of large vapor densities should enable measurements at the single-photon level by averaging over longer time scales.
Surface Plasmon-Induced Band Gap in the Photocurrent Response of Organic Solar Cells
Directory of Open Access Journals (Sweden)
Ribal Georges Sabat
2010-01-01
Full Text Available A 260 nm layer of organic bulk heterojunction blend of the polymer poly(3-hexylthiophene (P3HT and the fullerene [6,6]-phenyl C61-butyric (PCBM was spin-coated in between aluminum and gold electrodes, respectively, on top of a laser inscribed azo polymer surface-relief diffraction grating. Angle-dependent surface plasmons (SPs with a large band gap were observed in the normalized photocurrent by the P3HT-PCBM layer as a function of wavelength. The SP-induced photocurrents were also investigated as a function of the grating depth and spacing.
Depth-resolved band gap in Cu(In,Ga)(S,Se)2 thin films
Bär, M.; Nishiwaki, S.; Weinhardt, L.; Pookpanratana, S.; Fuchs, O.; Blum, M.; Yang, W.; Denlinger, J. D.; Shafarman, W. N.; Heske, C.
2008-12-01
The surface composition of Cu(In,Ga)(S,Se)2 ("CIGSSe") thin films intrinsically deviates from the corresponding bulk composition, which also modifies the electronic structure and thus the optical properties. We used a combination of photon and electron spectroscopies with different information depths to gain depth-resolved information on the band gap energy (Eg) in CIG(S)Se thin films. We find an increasing Eg with decreasing information depth, indicating the formation of a surface region with significantly higher Eg. This Eg-widened surface region extends further into the bulk of the sulfur-free CIGSe thin film compared to the CIGSSe thin film.
Shishehchi, Sara; Rudin, Sergey; Garrett, Gregory; Wraback, Michael; Bellotti, Enrico
2013-03-01
We present a theoretical and experimental study of the subpicosecond kinetics of photo-excited carriers in the wide band gap semiconductors GaN and ZnO. In the theoretical model, interaction with a photo-excitation laser pulse is treated coherently and a generalized Monte Carlo simulation is used to account for scattering and dephasing. The scattering mechanisms included are carrier interactions with polar optical phonons and acoustic phonons, and carrier-carrier Coulomb interactions. For comparison, experimental time-resolved photoluminescence studies on GaN and ZnO samples are performed over a range of temperatures and excitation powers.
A Large-Area Transferable Wide Band Gap 2D Silicon Dioxide Layer.
Büchner, Christin; Wang, Zhu-Jun; Burson, Kristen M; Willinger, Marc-Georg; Heyde, Markus; Schlögl, Robert; Freund, Hans-Joachim
2016-08-23
An atomically smooth silica bilayer is transferred from the growth substrate to a new support via mechanical exfoliation at millimeter scale. The atomic structure and morphology are maintained perfectly throughout the process. A simple heating treatment results in complete removal of the transfer medium. Low-energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and environmental scanning electron microscopy show the success of the transfer steps. Excellent chemical and thermal stability result from the absence of dangling bonds in the film structure. By adding this wide band gap oxide to the toolbox of 2D materials, possibilities for van der Waals heterostructures will be broadened significantly.
Robust band gap and half-metallicity in graphene with triangular perforations
DEFF Research Database (Denmark)
Gregersen, Søren Schou; Power, Stephen; Jauho, Antti-Pekka
2016-01-01
. The inclusion of spin polarization within a mean-field Hubbard approach gives rise to a large overall magnetic moment at each antidot due to the sublattice imbalance imposed by the triangular geometry. Half-metallic behavior arises from the formation of spin-split dispersive states near the Fermi energy...... disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g., by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag......, and furthermore, of exploiting the strong spin dependence of the system for spintronic applications....
M. Rusop; T. SHIRATA; Soga, T.; Jimbo, T.
2005-01-01
The properties and optical band gap excitation of nanoporous titanium dioxide (TiO2) and transparent semiconducting copper iodide (CuI) films prepared by a XeCl excimer laser were investigated. The CuI films exhibited optical transmittance over 80% in the wavelength range from 400 to 900 nm with minimum resistivity of about 2 KΩcm. The optical absorption of these films showed a remarkable blue shift compared to that of polycrystalline of CuI, which can be explained from the formation of ultra...
Chemical synthesis of Cd-free wide band gap materials for solar cells
Energy Technology Data Exchange (ETDEWEB)
Sankapal, B.R.; Sartale, S.D.; Ennaoui, A. [Hahn-Meitner-Institut, Berlin (Germany). Department of Solar Energy Research; Lokhande, C.D. [Shivaji University, Kolhapur (India). Department of Physics
2004-07-01
Chemical methods are nowadays very attractive, since they are relatively simple, low cost and convenient for larger area deposition of thin films. In this paper, we outline our work related to the synthesis and characterization of some wide band gap semiconducting material thin films prepared by using solution methods, namely, chemical bath deposition and successive ionic layer adsorption and reaction (SILAR). The optimum preparative parameters are given and respective structural, surface morphological, compositional, optical, and electrical properties are described. Some materials we used in solar cells as buffer layers and achieved remarkable results, which are summarized. (author)
Photoluminescence efficiency in wide-band-gap iii-nitride semiconductors and their heterostructures
Jurkevičius, Jonas
2016-01-01
This doctoral thesis presents a study of photoluminescence efficiency in wide-band-gap III-nitride semiconductors. The work is aimed at investigation of efficiency-limiting processes and causes of efficiency droop in AlGaN epilayers and multiple quantum wells. Also, light emission in BGaN epilayers, which are prospective in view of lattice matching in AlGaN-based heterostructures, is investigated. Three mechanisms are revealed to be important for the droop in AlGaN and the dependence of their...
Mode multiplexing at 2×20Gbps over 19-cell hollow-core photonic band gap fibre
DEFF Research Database (Denmark)
Carpenter, Joel; Xu, Jing; Peucheret, Christophe;
2012-01-01
This paper demonstrates the first mode-multiplexed system over 19-cell hollow-core photonic band gap fibre, at 2×20Gbps using the LP0,1 and LP2,1-like modes.......This paper demonstrates the first mode-multiplexed system over 19-cell hollow-core photonic band gap fibre, at 2×20Gbps using the LP0,1 and LP2,1-like modes....
Katiyar, Ajit K.; Grimm, Andreas; Bar, R.; Schmidt, Jan; Wietler, Tobias; Joerg Osten, H.; Ray, Samit K.
2016-10-01
Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55 virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55 has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.
Band gap narrowing of TiO2 by compensated codoping for enhanced photocatalytic activity
Institute of Scientific and Technical Information of China (English)
Jindou Huang; Shuhao Wen; Jianyong Liu; Guozhong He
2012-01-01
In this study,we have performed first-principles screened exchanged hybrid density function theory with the HSE06 function calculations of the C-Mo,C-W,N-Nb and N-Ta codoped anatase TiO2 systems to investigate the effect of codoping on the electronic structure of TiO2.The calculated results demonstrate that (W(s)+C(s)) codoped TiO2 narrows the band gap significantly,and have little influence on the position of conduction band edges,therefore,enhances the efficiency of the photocatalytic hydrogen generation from water and the photodegradation of organic pollutants.Moreover,the proper oxygen pressure and temperature are two key factors during synthesis which should be carefully under control so that the desired (W(s)+C(s)) codoped TiO2 can be obtained.
Directory of Open Access Journals (Sweden)
Feroz A. Mir
2014-01-01
Full Text Available Recently, we carried out structural, optical and dielectric studies on micro-crystals of Oxypeucedanin (C16H14O5, isolated from the roots of plant Prangos pabularia (Mir et al. (2014 [3,4]. The obtained trend in frequency exponent (s with frequency (ω indicates that the universal dynamic response is followed by this compound. From optical absorption spectroscopy, the optical band gap (Eg was estimated around 3.76 eV and system is showing indirect allowed transition. Using Eg in certain relation of s, a close value of s (as much close obtained by fitting ac conductivity was obtained. This method was further used for other similar systems and again same trend was obtained. So a general conclusion was made that the high transmitting wide band insulators or semiconductors may follow bipolaron hopping transport mechanism.
Temperature Dependent Switching Behavior of BFN Thin Films: a Wide Band Gap Semiconductor
Directory of Open Access Journals (Sweden)
Devang D. Shah
2011-01-01
Full Text Available The thin film of complex perovskite Ba(Fe0.5Nb0.5O3 (BFN was prepared through Pulsed Laser Deposition (PLD technique. XRD and AFM studies show single cubic phase with well developed nano size grains of BFN compound. Swift Heavy Ion (SHI irradiation on BFN of O+7 ions up to 1 × 1013 ions per cc fluence does not show any crystal or morphological structural changes in the film, signifying materials stability up to the above ion dose. BFN compound exhibit its band gap in wide band semiconductor region (3.53 eV. A characteristic negative temperature coefficient of resistance (NTCR to positive temperature coefficient of resistance (PTCR transition of large magnitude at ~ 350 °C makes BFN a promising candidate for electrical/magnetic switching device.
Coupled flexural-torsional vibration band gap in periodic beam including warping effect
Institute of Scientific and Technical Information of China (English)
Fang Jian-Yu; Yu Dian-Long; Han Xiao-Yun; Cai Li
2009-01-01
The propagation of coupled flexural-torsional vibration in the periodic beam including warping effect is investigated with the transfer matrix theory.The band structures of the periodic beam,both including warping effect and ignoring warping effect,are obtained.The frequency response function of the finite periodic beams is simulated with finite element method,which shows large vibration attenuation in the frequency range of the gap as expected.The effect of warping stiffness on the band structure is studied and it is concluded that substantial error can be produced in high frequency range if the effect is ignored.The result including warping effect agrees quite well with the simulated result.
Band gap control in a line-defect magnonic crystal waveguide
Energy Technology Data Exchange (ETDEWEB)
Morozova, M. A., E-mail: mamorozovama@yandex.ru; Grishin, S. V.; Sadovnikov, A. V.; Romanenko, D. V.; Sharaevskii, Yu. P.; Nikitov, S. A. [Laboratory ' Metamaterials,' Saratov State University, Astrakhanskaya 83, Saratov 410012 (Russian Federation)
2015-12-14
We report on the experimental observation of the spin wave spectrum control in a line-defect magnonic crystal (MC) waveguide. We demonstrate the possibility to control the forbidden frequency band (band gap) for spin waves tuning the line-defect width. In particular, this frequency may be greater or lower than the one of 1D MC waveguide without line-defect. By means of space-resolved Brillouin light scattering technique, we study the localization of magnetization amplitude in the line-defect area. We show that the length of this localization region depends on the line-defect width. These results agree well with theoretical calculations of spin wave spectrum using the proposed model of two coupled magnonic crystal waveguides. The proposed simple geometry of MC with line-defect can be used as a logic and multiplexing block for application in the novel field of magnonic devices.
Men, Han; Freund, Robert M; Parrilo, Pablo A; Peraire, Jaume
2009-01-01
In this paper, we consider the optimal design of photonic crystal band structures for two-dimensional square lattices. The mathematical formulation of the band gap optimization problem leads to an infinite-dimensional Hermitian eigenvalue optimization problem parametrized by the dielectric material and the wave vector. To make the problem tractable, the original eigenvalue problem is discretized using the finite element method into a series of finite-dimensional eigenvalue problems for multiple values of the wave vector parameter. The resulting optimization problem is large-scale and non-convex, with low regularity and non-differentiable objective. By restricting to appropriate eigenspaces, we reduce the large-scale non-convex optimization problem via reparametrization to a sequence of small-scale convex semidefinite programs (SDPs) for which modern SDP solvers can be efficiently applied. Numerical results are presented for both transverse magnetic (TM) and transverse electric (TE) polarizations at several fr...
Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing
Energy Technology Data Exchange (ETDEWEB)
Tonkikh, Alexander A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Institute for Physics of Microstructures RAS, GSP-105, Nizhniy Novgorod (Russian Federation); Eisenschmidt, Christian; Schmidt, Georg [Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany); Talalaev, Vadim G. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany); Zakharov, Nikolay D.; Werner, Peter [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Schilling, Joerg [ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)
2013-07-15
A study of the bandgap character of compressively strained GeSn{sub 0.060-0.091}/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and {Gamma} conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, b{sub L} = 0.80 {+-} 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %.
Non-Band-Gap Photoexcitation of Hydroxylated TiO2.
Zhang, Yu; Payne, Daniel T; Pang, Chi L; Fielding, Helen H; Thornton, Geoff
2015-09-03
The photochemistry of TiO2 has been studied intensively since it was discovered that TiO2 can act as a photocatalyst. Nevertheless, it has proven difficult to establish the detailed charge-transfer processes involved, partly because the excited states involved are difficult to study. Here we present evidence of the existence of hydroxyl-induced excited states in the conduction band region. Using two-photon photoemission, we show that stepwise photoexcitation from filled band gap states lying 0.8 eV below the Fermi level of rutile TiO2(110) excites hydroxyl-induced states 2.73 eV above the Fermi level that has an onset energy of ∼3.1 eV. The onset is shifted to lower energy by the coadsorption of molecular water, which suggests a means of tuning the energy of the excited state.
Study of Optical Band Gap of CuO Using Fermi's Golden Rule
Nemade, K. R.; Waghuley, S. A.
2012-05-01
Quantum size effect where the electronic and optical properties of solids are altered due to changes in the band structures, enhanced the surface/volume ratio in nano dimensions forces more than 33% of the atoms to be on the surface (for 10nm dot 35), which drastically altering the physical properties such as having lower melting temperature and lower sintering temperature, and higher diffusion force at elevated temperatures. Consequently, its Fermi's golden rule analysis becomes crucial. Cupric oxide (CuO) is an important transition metal oxide with the basis of several high temperature superconductors and giant magnetoresistance materials. In present investigation, optical Band Gap from UV data using Fermi's golden rule for single step chemically synthesized CuO was computed.
Institute of Scientific and Technical Information of China (English)
Yang Ping; Li Pei; Zhang Li-Qiang; Wang Xiao-Liang; Wang Huan; Song Xi-Fu; Xie Fang-Wei
2012-01-01
The lattice,the band gap and the optical properties of n-type ZnO under uniaxial stress are investigated by firstprinciples calculations.The results show that the lattice constants change linearly with stress.Band gaps are broadened linearly as the uniaxial compressive stress increases.The change of band gap for n-type ZnO comes mainly from the contribution of stress in the c-axis direction,and the reason for band gap of n-type ZnO changing with stress is also explained.The calculated results of optical properties reveal that the imaginary part of the dielectric function decreases with the increase of uniaxial compressive stress at low energy.However,when the energy is higher than 4.0 eV,the imaginary part of the dielectric function increases with the increase of stress and a blueshift appears.There are two peaks in the absorption spectrum in an energy range of 4.0-13.0 eV.The stress coefficient of the band gap of n-type ZnO is larger than that of pure ZnO,which supplies the theoretical reference value for the modulation of the band gap of doped ZnO.
Energy Technology Data Exchange (ETDEWEB)
Ribeiro, M. [Centro de Pesquisas Avancadas Wernher von Braun, Av. Alice de Castro P.N. Mattosinho 301, CEP 13098-392 Campinas, SP (Brazil); Ferreira, L.G. [Departamento de Fisica dos Materiais e Mecanica, Instituto de Fisica, Universidade de Sao Paulo, 05315-970 Sao Paulo, SP (Brazil); Fonseca, L.R.C. [Center for Semiconductor Components, State University of Campinas, R. Pandia Calogeras 90, 13083-870 Campinas, SP (Brazil); Ramprasad, R. [Department of Chemical, Materials and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, 97 North Eagleville Road, Storrs, CT 06269 (United States)
2012-09-20
We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme to obtain corrected band gaps and band offsets. Our calculations include the spin-orbit effects for the bulk cases, which have shown to be of importance for the equilibrium systems and are possibly degraded in these strained semiconductors. Therefore, the SO showed reduced importance for the band alignment of this particular system. Moreover, the electronic structure calculated along the transition region across the CdSe/CdTe interface shows an interesting non-monotonic variation of the band gap in the range 0.8-1.8 eV, which may enhance the absorption of light for corresponding frequencies at the interface between these two materials in photovoltaic applications.
Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
Luo, Ning; Huang, Guang-Yao; Liao, Gaohua; Ye, Lin-Hui; Xu, H. Q.
2016-12-01
The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the 8 × 8 Luttinger-Kohn Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands. We focus on the variations of the band-inverted fundamental gap, the hybridization gap, and the effective gap with the core radius and shell thickness of the nanowires. The evolutions of all the energy gaps with the structural parameters are shown to be dominantly governed by the effect of quantum confinement. With a fixed core radius, a band-inverted fundamental gap exists only at intermediate shell thicknesses. The maximum band-inverted gap found is ~4.4 meV for GaSb/InAs and ~3.5 meV for InAs/GaSb core-shell nanowires, and for the GaSb/InAs core-shell nanowires the gap persists over a wider range of geometrical parameters. The intrinsic reason for these differences between the two types of nanowires is that in the shell the electron-like states of InAs is more delocalized than the hole-like state of GaSb, while in the core the hole-like state of GaSb is more delocalized than the electron-like state of InAs, and both favor a stronger electron-hole hybridization.
Preliminary results from a numerical study on the appendix gap losses in a Stirling engine
DEFF Research Database (Denmark)
Andersen, Stig Kildegård; Carlsen, Henrik; Thomsen, Per Grove
2005-01-01
with different algorithms for computing the heat transfer in the gap. The results showed higher losses for small gap sizes but smaller losses for large gap sizes when compared to analytical expressions for the appendix gap losses. The appendix gap losses were found to influence both the heat intake and work......Analytical expressions for the losses in the displacer clearance gap, a.k.a. the appendix gap, have been refined during the last decades. But most real life Stirling engines violate the assumptions behind these expressions and hence the expressions may not be applicable. In this study the gap has...... been included directly into a one dimensional Stirling engine model. Practical aspects of the method, such as handling the moving wall in the gap while achieving an energy conserving model formulation and handling discontinuous derivatives in the equations, are discussed. A study on the convergence...
Band Gap Energies and Refractive Indices of Epitaxial Pb1-xSrxTe Thin Films
Institute of Scientific and Technical Information of China (English)
WENG Bin-Bin; WU Hui-Zhen; SI Jian-Xiao; XU Tian-Ning
2008-01-01
Pb1-xSrx Te thin films with different strontium (St) compositions are grown on BaF2 (111) substrates by molecular beam epitaxy (MBE). Using high resolution x-ray diffraction (HRXRD), we obtain Pb1-xSrx Te lattice constants,which vary in the range 6.462-6.492 A. According to the Vegard law and HRXRD data, Sr compositions in Pb1-xSrxTe thin films range from 0.0-8.0%. The Pb1-xSrx Te refractive index dispersions are attained from infrared transmission spectrum characterized by Fourier transform infrared (FTIR) transmission spectroscopy.It is found that refractive index decreases while Sr content increases in Pb1-xSrx Te. We also simulate the Pb1-xSrx Te transmission spectra theoretically to obtain the optical band gap energies which range between0.320 e V and 0.449 e V. The simulated results are in good agreement with the FTIR data. Finally, we determine the relation between Ph1-xSrx Te band gap energies and Sr compositions (Eg = 0.320+0.510x- 0.930x2 + 184x3 (e V) ).
Parhoodeh, Saeed; Kowsari, Mohammad
2016-10-01
In this study, effects of vanadium doping in crystal lattice structure of indium oxide (In2O3) were investigated. Indium oxide nanoparticles with different amounts of dopant concentrations were fabricated by a facile and cost effective method. X-ray diffraction (XRD) analysis revealed the formation of cubic phase for doped and undoped samples. It was observed that the lattice parameters of doped samples were decreased respect to the pure indium oxide, but the crystallite sizes and the particles' sizes of doped samples were increased in result of substitution of vanadium in crystal lattice of In2O3. The scanning electron microscope (SEM) images of samples showed that all samples have spherical shapes, and their distribution sizes are between 10 and 70 nm. It was found that the average sizes of nanoparticles were increased linearly with the amounts of dopant concentration. A red shift was founded in the band gap of vanadium doped samples respect to pure In2O3. The maximum of the band gap shift was observed for samples with 0.025 M concentration of dopant. Based on impedance spectroscopy data, it was found that impedances of samples are increased by increasing of dopant concentration for all frequencies which were tested in this study.
Numerical investigation of band gaps in 3D printed cantilever-in-mass metamaterials
Qureshi, Awais; Li, Bing; Tan, K. T.
2016-06-01
In this research, the negative effective mass behavior of elastic/mechanical metamaterials is exhibited by a cantilever-in-mass structure as a proposed design for creating frequency stopping band gaps, based on local resonance of the internal structure. The mass-in-mass unit cell model is transformed into a cantilever-in-mass model using the Bernoulli-Euler beam theory. An analytical model of the cantilever-in-mass structure is derived and the effects of geometrical dimensions and material parameters to create frequency band gaps are examined. A two-dimensional finite element model is created to validate the analytical results, and excellent agreement is achieved. The analytical model establishes an easily tunable metamaterial design to realize wave attenuation based on locally resonant frequency. To demonstrate feasibility for 3D printing, the analytical model is employed to design and fabricate 3D printable mechanical metamaterial. A three-dimensional numerical experiment is performed using COMSOL Multiphysics to validate the wave attenuation performance. Results show that the cantilever-in-mass metamaterial is capable of mitigating stress waves at the desired resonance frequency. Our study successfully presents the use of one constituent material to create a 3D printed cantilever-in-mass metamaterial with negative effective mass density for stress wave mitigation purposes.
Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment.
Yan, Rusen; Fathipour, Sara; Han, Yimo; Song, Bo; Xiao, Shudong; Li, Mingda; Ma, Nan; Protasenko, Vladimir; Muller, David A; Jena, Debdeep; Xing, Huili Grace
2015-09-09
van der Waals (vdW) heterojunctions composed of two-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibits novel physics phenomena that can power a range of electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature Esaki tunnel diodes. The Esaki diodes were realized in vdW heterostructures made of black phosphorus (BP) and tin diselenide (SnSe2), two layered semiconductors that possess a broken-gap energy band offset. The presence of a thin insulating barrier between BP and SnSe2 enabled the observation of a prominent negative differential resistance (NDR) region in the forward-bias current-voltage characteristics, with a peak to valley ratio of 1.8 at 300 K and 2.8 at 80 K. A weak temperature dependence of the NDR indicates electron tunneling being the dominant transport mechanism, and a theoretical model shows excellent agreement with the experimental results. Furthermore, the broken-gap band alignment is confirmed by the junction photoresponse, and the phosphorus double planes in a single layer of BP are resolved in transmission electron microscopy (TEM) for the first time. Our results represent a significant advance in the fundamental understanding of vdW heterojunctions and broaden the potential applications of 2D layered materials.
Isotropic band gaps and freeform waveguides observed in hyperuniform disordered photonic solids.
Man, Weining; Florescu, Marian; Williamson, Eric Paul; He, Yingquan; Hashemizad, Seyed Reza; Leung, Brian Y C; Liner, Devin Robert; Torquato, Salvatore; Chaikin, Paul M; Steinhardt, Paul J
2013-10-01
Recently, disordered photonic media and random textured surfaces have attracted increasing attention as strong light diffusers with broadband and wide-angle properties. We report the experimental realization of an isotropic complete photonic band gap (PBG) in a 2D disordered dielectric structure. This structure is designed by a constrained optimization method, which combines advantages of both isotropy due to disorder and controlled scattering properties due to low-density fluctuations (hyperuniformity) and uniform local topology. Our experiments use a modular design composed of Al2O3 walls and cylinders arranged in a hyperuniform disordered network. We observe a complete PBG in the microwave region, in good agreement with theoretical simulations, and show that the intrinsic isotropy of this unique class of PBG materials enables remarkable design freedom, including the realization of waveguides with arbitrary bending angles impossible in photonic crystals. This experimental verification of a complete PBG and realization of functional defects in this unique class of materials demonstrate their potential as building blocks for precise manipulation of photons in planar optical microcircuits and has implications for disordered acoustic and electronic band gap materials.
Energy Technology Data Exchange (ETDEWEB)
Li, Jianwei, E-mail: jwl189@163.com; Zhao, Xinsheng [Laboratory for Quantum Design of Functional Material, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116 (China); Liu, Xinjuan [Center for Coordination Bond and Electronic Engineering, College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China); Zheng, Xuejun [School of Mechanical Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China); Yang, Xuexian [Department of Physics, Jishou University, Jishou 416000, Hunan (China); Zhu, Zhe [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)
2015-09-28
The band gap and melting temperature of a semiconductor are tunable with the size and shape of the specimen at the nanometer scale, and related mechanisms remain as yet unclear. In order to understand the common origin of the size and shape effect on these two seemingly irrelevant properties, we clarify, correlate, formulate, and quantify these two properties of GaAs, GaN, InP, and InN nanocrystals from the perspectives of bond order-length-strength correlation using the core-shell configuration. The consistency in the theoretical predictions, experimental observations, and numerical calculations verify that the broken-bond-induced local bond contraction and strength gain dictates the band gap expansion, while the atomic cohesive energy loss due to bond number reduction depresses the melting point. The fraction of the under-coordinated atoms in the skin shell quantitatively determines the shape and size dependency. The atomic under-coordination in the skin down to a depth of two atomic layers inducing a change in the local chemical bond is the common physical origin.
The study of response of wide band gap semiconductor detectors using the Geant4
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Hussain Riaz
2014-01-01
Full Text Available The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors using the Geant4 based Monte Carlo simulations. The detector thickness of 1-4 mm and the area in 16-100 mm2 range were considered in this work. In excellent agreement with earlier work (Rybka et al., [20], the Geant4 simulated values of detector efficiencies have been found to decrease with incident g-ray energy. Both for the detector thickness and the detector area, the increasing trends have been observed for total efficiency as well as for full-energy peak efficiency in 0.1 MeV-50 MeV range. For Cd1-xZnxTe, the detector response remained insensitive to changes in relative proportions of Zn. For various wide band gap detectors studied in this work, the detection efficiency of TlBr was found highest over the entire range of energy, followed by the HgI2, CdTe, and then by CZT.
Bahk, Je-Hyeong; Shakouri, Ali
2016-04-01
We present detailed theoretical predictions on the enhancement of the thermoelectric figure of merit by minority carrier blocking with heterostructure barriers in bulk narrow-band-gap semiconductors. Bipolar carrier transport, which is often significant in a narrow-band-gap material, is detrimental to the thermoelectric energy conversion efficiency as it suppresses the Seebeck coefficient and increases the thermal conductivity. When the minority carriers are selectively prevented from participating in conduction while the transport of majority carriers is relatively unaffected by one-sided heterobarriers, the thermoelectric figure of merit can be drastically enhanced. Thermoelectric transport properties such as Seebeck coefficient, electrical conductivity, and electronic thermal conductivity including the bipolar term are calculated with and without the barriers based on the near-equilibrium Boltzmann transport equations under the relaxation time approximation to investigate the effects of minority carrier barriers on the thermoelectric figure of merit. For this, we provide details of carrier transport modeling and fitting results of experimental data for three important material systems, B i2T e3 -based alloys, M g2S i1 -xS nx , and S i1 -xG ex , that represent, respectively, near-room-temperature (300 K-500 K), midtemperature (600 K-900 K), and high-temperature (>1000 K ) applications. Theoretical maximum enhancement of thermoelectric figure of merit that can be achieved by minority carrier blocking is quantified and discussed for each of these semiconductors.
Kimmerle, Achim; Greulich, Johannes; Haug, Halvard; Wolf, Andreas
2016-01-01
In this work, the recently proposed band-gap narrowing model by Yan and Cuevas [J. Appl. Phys. 114, 044508 (2013)] is evaluated by simulations of the recombination pre-factor J0 of highly phosphorus doped, passivated crystalline silicon surfaces, which are particularly relevant for solar cell applications. The results were fitted to experimental J0 data measured on a large range of samples exhibiting different dopant profiles and passivation coatings, both for planar and textured surfaces. For each sample, the surface recombination velocity parameter Sp was extracted by fitting the simulation results to the experimental data. We show that the Yan and Cuevas' model developed for Fermi-Dirac statistics leads to a smooth and monotonically increasing curve for Sp as a function of the surface dopant concentration Nsurf, for both investigated passivation layers. We provide a parameterization for this relation and compare the findings with those obtained with the widely used model by Schenk [J. Appl. Phys. 84, 3684 (1998)]. On the other hand, we show that the apparent band gap narrowing of Yan and Cuevas developed for use with Boltzmann statistics cannot be used to describe the experimental data, requiring unphysical negative Sp values for high Nsurf.