WorldWideScience

Sample records for atomic layer graphene

  1. Atomic layer deposition of high-k oxides on graphene

    OpenAIRE

    Alles, Harry; Aarik, Jaan; Kozlova, Jekaterina; Niilisk, Ahti; Rammula, Raul; Sammelselg, Väino

    2011-01-01

    Comment: Graphene - Synthesis, Characterization, Properties and Applications, Jian Ru Gong (Ed.), ISBN: 978-953-307-292-0, InTech, Available from: http://www.intechopen.com/articles/show/title/atomic-layer-deposition-of-high-k-oxides-on-graphene

  2. Interfacial Atomic Structure of Twisted Few-Layer Graphene

    OpenAIRE

    Ryo Ishikawa; Nathan R. Lugg; Kazutoshi Inoue; Hidetaka Sawada; Takashi Taniguchi; Naoya Shibata; Yuichi Ikuhara

    2016-01-01

    A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterize...

  3. Plasma enhanced atomic layer deposition of ultrathin oxides on graphene

    Science.gov (United States)

    Trimble, Christie J.; Zaniewski, Anna M.; Kaur, Manpuneet; Nemanich, Robert J.

    2015-03-01

    Graphene, a single atomic layer of sp2 bonded carbon atoms, possesses extreme material properties that point toward a plethora of potential electronic applications. Many of these possibilities require the combination of graphene with dielectric materials such as metal oxides. Simultaneously, there is interest in new physical properties that emerge when traditionally three dimensional materials are constrained to ultrathin layers. For both of these objectives, we explore deposition of ultrathin oxide layers on graphene. In this project, we perform plasma enhanced atomic layer deposition (PEALD) of aluminum oxide on graphene that has been grown by chemical vapor deposition atop copper foil and achieve oxide layers that are <1.5 nm. Because exposure to oxygen plasma can cause the graphene to deteriorate, we explore techniques to mitigate this effect and optimize the PEALD process. Following deposition, the graphene and oxide films are transferred to arbitrary substrates for further analysis. We use x-ray photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy to assess the quality of the resulting films. This work is supported by the National Science Foundation under Grant # DMR-1206935.

  4. Interfacial Atomic Structure of Twisted Few-Layer Graphene

    Science.gov (United States)

    Ishikawa, Ryo; Lugg, Nathan R.; Inoue, Kazutoshi; Sawada, Hidetaka; Taniguchi, Takashi; Shibata, Naoya; Ikuhara, Yuichi

    2016-01-01

    A twist in bi- or few-layer graphene breaks the local symmetry, introducing a number of intriguing physical properties such as opening new bandgaps. Therefore, determining the twisted atomic structure is critical to understanding and controlling the functional properties of graphene. Combining low-angle annular dark-field electron microscopy with image simulations, we directly determine the atomic structure of twisted few-layer graphene in terms of a moiré superstructure which is parameterized by a single twist angle and lattice constant. This method is shown to be a powerful tool for accurately determining the atomic structure of two-dimensional materials such as graphene, even in the presence of experimental errors. Using coincidence-site-lattice and displacement-shift-complete theories, we show that the in-plane translation state between layers is not a significant structure parameter, explaining why the present method is adequate not only for bilayer graphene but also a few-layered twisted graphene. PMID:26888259

  5. Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

    Science.gov (United States)

    Nourbakhsh, Amirhasan; Adelmann, Christoph; Song, Yi; Lee, Chang Seung; Asselberghs, Inge; Huyghebaert, Cedric; Brizzi, Simone; Tallarida, Massimo; Schmeißer, Dieter; van Elshocht, Sven; Heyns, Marc; Kong, Jing; Palacios, Tomás; de Gendt, Stefan

    2015-06-01

    Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the capacitive properties of GO with its electronic structure. Capacitance-voltage measurements showed that the capacitive behavior of Al2O3/GO depends on the oxidation level of GO. Finally, GO was successfully used as an ALD seed layer for the deposition of Al2O3 on chemically inert single layer graphene, resulting in high performance top-gated field-effect transistors.Graphene oxide (GO) was explored as an atomically-thin transferable seed layer for the atomic layer deposition (ALD) of dielectric materials on any substrate of choice. This approach does not require specific chemical groups on the target surface to initiate ALD. This establishes GO as a unique interface which enables the growth of dielectric materials on a wide range of substrate materials and opens up numerous prospects for applications. In this work, a mild oxygen plasma treatment was used to oxidize graphene monolayers with well-controlled and tunable density of epoxide functional groups. This was confirmed by synchrotron-radiation photoelectron spectroscopy. In addition, density functional theory calculations were carried out on representative epoxidized graphene monolayer models to correlate the

  6. Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

    Science.gov (United States)

    Gong, Yongji; Shi, Gang; Zhang, Zhuhua; Zhou, Wu; Jung, Jeil; Gao, Weilu; Ma, Lulu; Yang, Yang; Yang, Shubin; You, Ge; Vajtai, Robert; Xu, Qianfan; MacDonald, Allan H.; Yakobson, Boris I.; Lou, Jun; Liu, Zheng; Ajayan, Pulickel M.

    2014-01-01

    Graphene and hexagonal boron nitride are typical conductor and insulator, respectively, while their hybrids hexagonal boron carbonitride are promising as a semiconductor. Here we demonstrate a direct chemical conversion reaction, which systematically converts the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform boron nitride and boron carbonitride structures without disrupting the structural integrity of the original graphene templates. We synthesize high-quality atomic layer films with boron-, nitrogen- and carbon-containing atomic layers with full range of compositions. Using this approach, the electrical resistance, carrier mobilities and bandgaps of these atomic layers can be tuned from conductor to semiconductor to insulator. Combining this technique with lithography, local conversion could be realized at the nanometre scale, enabling the fabrication of in-plane atomic layer structures consisting of graphene, boron nitride and boron carbonitride. This is a step towards scalable synthesis of atomically thin two-dimensional integrated circuits.

  7. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling.

    Science.gov (United States)

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2016-01-01

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene. PMID:26645468

  8. Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling

    Science.gov (United States)

    Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

    2015-12-01

    Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene. Electronic supplementary information (ESI) available: Three TEM movies, additional TEM data corresponding to movies, calculated models, and lifetime results. See DOI: 10.1039/c5nr05913e

  9. Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

    Science.gov (United States)

    Kim, Ki Seok; Oh, Il-Kwon; Jung, Hanearl; Kim, Hyungjun; Yeom, Geun Young; Kim, Kyong Nam

    2016-05-01

    The polymer residue generated during the graphene transfer process to the substrate tends to cause problems (e.g., a decrease in electron mobility, unwanted doping, and non-uniform deposition of the dielectric material). In this study, by using a controllable low-energy Ar+ ion beam, we cleaned the polymer residue without damaging the graphene network. HfO2 grown by atomic layer deposition on graphene cleaned using an Ar+ ion beam showed a dense uniform structure, whereas that grown on the transferred graphene (before Ar+ ion cleaning) showed a non-uniform structure. A graphene-HfO2-metal capacitor fabricated by growing 20-nm thick HfO2 on graphene exhibited a very low leakage current (graphene, whereas a similar capacitor grown using the transferred graphene showed high leakage current.

  10. Visualization of arrangements of carbon atoms in graphene layers by Raman mapping and atomic-resolution TEM

    KAUST Repository

    Cong, Chunxiao

    2013-02-01

    In-plane and out-of-plane arrangements of carbon atoms in graphene layers play critical roles in the fundamental physics and practical applications of these novel two-dimensional materials. Here, we report initial results on the edge/crystal orientations and stacking orders of bi-and tri-layer graphene (BLG and TLG) from Raman spectroscopy and transmission electron microscopy (TEM) experiments performed on the same sample. We introduce a new method of transferring graphene flakes onto a normal TEM grid. Using this novel method, we probed the BLG and TLG flakes that had been previously investigated by Raman scattering with high-resolution (atomic) TEM.

  11. Atomic-scale friction modulated by potential corrugation in multi-layered graphene materials

    International Nuclear Information System (INIS)

    Friction is an important issue that has to be carefully treated for the fabrication of graphene-based nano-scale devices. So far, the friction mechanism of graphene materials on the atomic scale has not yet been clearly presented. Here, first-principles calculations were employed to unveil the friction behaviors and their atomic-scale mechanism. We found that potential corrugations on sliding surfaces dominate the friction force and the friction anisotropy of graphene materials. Higher friction forces correspond to larger corrugations of potential energy, which are tuned by the number of graphene layers. The friction anisotropy is determined by the regular distributions of potential energy. The sliding along a fold-line path (hollow-atop-hollow) has a relatively small potential energy barrier. Thus, the linear sliding observed in macroscopic friction experiments may probably be attributed to the fold-line sliding mode on the atomic scale. These findings can also be extended to other layer-structure materials, such as molybdenum disulfide (MoS2) and graphene-like BN sheets

  12. Atomic-scale friction modulated by potential corrugation in multi-layered graphene materials

    Energy Technology Data Exchange (ETDEWEB)

    Zhuang, Chunqiang, E-mail: chunqiang.zhuang@bjut.edu.cn [Beijing Key Laboratory of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China); Liu, Lei [Institute of Earthquake Science, China Earthquake Administration, Beijing 10036 (China)

    2015-03-21

    Friction is an important issue that has to be carefully treated for the fabrication of graphene-based nano-scale devices. So far, the friction mechanism of graphene materials on the atomic scale has not yet been clearly presented. Here, first-principles calculations were employed to unveil the friction behaviors and their atomic-scale mechanism. We found that potential corrugations on sliding surfaces dominate the friction force and the friction anisotropy of graphene materials. Higher friction forces correspond to larger corrugations of potential energy, which are tuned by the number of graphene layers. The friction anisotropy is determined by the regular distributions of potential energy. The sliding along a fold-line path (hollow-atop-hollow) has a relatively small potential energy barrier. Thus, the linear sliding observed in macroscopic friction experiments may probably be attributed to the fold-line sliding mode on the atomic scale. These findings can also be extended to other layer-structure materials, such as molybdenum disulfide (MoS{sub 2}) and graphene-like BN sheets.

  13. Graphene Coatings: Probing the Limits of the One Atom Thick Protection Layer

    DEFF Research Database (Denmark)

    Nilsson, Louis; Andersen, Mie; Balog, Richard; Lægsgaard, Erik; Hofmann, Philip; Besenbacher, Flemming; Hammer, Bjørk; Stensgaard, Ivan; Hornekær, Liv

    2012-01-01

    against CO is observed at CO pressures below 106 mbar. However, at higher pressures CO is observed to intercalate under the graphene coating layer, thus lifting the reconstruction. The limitations of the coating effect are further tested by exposure to hot atomic hydrogen. While the coating can withstand......The limitations of graphene as an effective corrosion-inhibiting coating on metal surfaces, here exemplified by the hex-reconstructed Pt(100) surface, are probed by scanning tunneling microscopy measurements and density functional theory calculations. While exposure of small molecules directly onto...... these extreme conditions for a limited amount of time, after substantial exposure, the Pt(100) reconstruction is lifted. Annealing experiments and density functional theory calculations demonstrate that the basal plane of the graphene stays intact and point to a graphene-mediated mechanism for the H...

  14. Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

    OpenAIRE

    Yamaguchi, Takehiro; Masubuchi, Satoru; Iguchi, Kazuyuki; Moriya, Rai; Machida, Tomoki

    2011-01-01

    We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, ...

  15. Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

    Institute of Scientific and Technical Information of China (English)

    KANG Chao-Yang; TANG Jun; LIU Zhong-Liang; LI Li-Min; YAN Wen-Sheng; WEI Shi-Qiang; XU Peng-Shou

    2011-01-01

    Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber.The reflection high energy diffraction,Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample,which confirm the formation of graphene layers.The mean domain size of FLG is around 29.2 nm and the layer number is about 2-3.The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated a-SiC surface.Graphene,a monolayer of sp2-bonded carbon atoms,is a quasi two-dimensional (2D) material.It has attracted great interest because of its distinctive band structure and physical properties.[1] Graphene can now be obtained by several different approaches including micromechanical[1] and chemical[2] exfoliation of graphite,epitaxial growth on hexagonal SiC substrates by Si sublimation in vacuum,[3] and CVD growth on metal substrates.[4] However,these preparation methods need special substrates,otherwise,in order to design microelectronic devices,the prepared graphene should be transferred to other appropriate substrates.Thus the growth of graphene on the suitable substrates is motivated.%Few-layer graphene (FLG) is successfully grown on sapphire substrates by directly depositing carbon atoms at the substrate temperature of 1300℃ in a molecular beam epitaxy chamber. The reflection high energy diffraction, Raman spectroscopy and near-edge x-ray absorption fine structure are used to characterize the sample, which confirm the formation of graphene layers. The mean domain size of FLG is around 29.2nm and the layer number is about 2-3. The results demonstrate that the grown FLG displays a turbostratic stacking structure similar to that of the FLG produced by annealing C-terminated α-SiC surface.

  16. Probing the Structure and Chemistry of Perylenetetracarboxylic Dianhydride on Graphene Before and After Atomic Layer Deposition of Alumina

    OpenAIRE

    Johns, James E.; Karmel, Hunter J.; Alaboson, Justice M. P.; Hersam, Mark C.

    2012-01-01

    The superlative electronic properties of graphene suggest its use as the foundation of next generation integrated circuits. However, this application requires precise control of the interface between graphene and other materials, especially the metal oxides that are commonly used as gate dielectrics. Towards that end, organic seeding layers have been empirically shown to seed ultrathin dielectric growth on graphene via atomic layer deposition (ALD), although the underlying chemical mechanisms...

  17. Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability

    Science.gov (United States)

    Cheol Shin, Woo; Yong Kim, Taek; Sul, Onejae; Jin Cho, Byung

    2012-07-01

    We demonstrate that ultrathin poly(4-vinylphenol) (PVP) acts as an effective organic seeding layer for atomic layer deposition (ALD) of high-k dielectric on large-scale graphene fabricated by chemical vapor deposition (CVD). While identical ALD conditions result in incomplete and rough dielectric deposition on CVD graphene, the reactive groups provided by the PVP seeding layer yield conformal and pinhole-free dielectric films throughout the large-scale graphene. Top-gate graphene field effect transistors fabricated with the high quality, PVP-seeded Al2O3 gate dielectric show superior carrier mobility and enhanced reliability performance, which are desirable for graphene nanoelectronics.

  18. Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

    KAUST Repository

    Lin, Yu-Chuan

    2014-11-10

    Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green\\'s function (NEGF).

  19. Bottom-gate coplanar graphene transistors with enhanced graphene adhesion on atomic layer deposition Al2O3

    International Nuclear Information System (INIS)

    A graphene transistor with a bottom-gate coplanar structure and an atomic layer deposition (ALD) aluminum oxide (Al2O3) gate dielectric is demonstrated. Wetting properties of ALD Al2O3 under different deposition conditions are investigated by measuring the surface contact angle. It is observed that the relatively hydrophobic surface is suitable for adhesion between graphene and ALD Al2O3. To achieve hydrophobic surface of ALD Al2O3, a methyl group (CH3)-terminated deposition method has been developed and compared with a hydroxyl group (OH)-terminated deposition. Based on this approach, bottom-gate coplanar graphene field-effect transistors are fabricated and characterized. A post-thermal annealing process improves the performance of the transistors by enhancing the contacts between the source/drain metal and graphene. The fabricated transistor shows an Ion/Ioff ratio, maximum transconductance, and field-effect mobility of 4.04, 20.1 μS at VD = 0.1 V, and 249.5 cm2/V·s, respectively

  20. Bottom-gate coplanar graphene transistors with enhanced graphene adhesion on atomic layer deposition Al2O3

    Science.gov (United States)

    Park, Dong-Wook; Mikael, Solomon; Chang, Tzu-Hsuan; Gong, Shaoqin; Ma, Zhenqiang

    2015-03-01

    A graphene transistor with a bottom-gate coplanar structure and an atomic layer deposition (ALD) aluminum oxide (Al2O3) gate dielectric is demonstrated. Wetting properties of ALD Al2O3 under different deposition conditions are investigated by measuring the surface contact angle. It is observed that the relatively hydrophobic surface is suitable for adhesion between graphene and ALD Al2O3. To achieve hydrophobic surface of ALD Al2O3, a methyl group (CH3)-terminated deposition method has been developed and compared with a hydroxyl group (OH)-terminated deposition. Based on this approach, bottom-gate coplanar graphene field-effect transistors are fabricated and characterized. A post-thermal annealing process improves the performance of the transistors by enhancing the contacts between the source/drain metal and graphene. The fabricated transistor shows an Ion/Ioff ratio, maximum transconductance, and field-effect mobility of 4.04, 20.1 μS at VD = 0.1 V, and 249.5 cm2/V.s, respectively.

  1. C3 coefficients for the alkali atoms interacting with a graphene layer and carbon nanotube

    International Nuclear Information System (INIS)

    We evaluate separation dependent van der Waals dispersion (C3) coefficients for the interactions of the Li, Na, K and Rb atoms with a graphene layer and with a single walled carbon nanotube (CNT) using the hydrodynamic and Dirac models. The results from both the models are evaluated using accurate values of the dynamic polarizabilities of the above alkali atoms. Accountability of accurate dynamic polarizabilities of the alkali atoms to determine the C3 coefficients are accentuated by comparing the obtained coefficients using the precise values of the dynamic dipole polarizabilities against the values estimated from the single oscillator approximation that are generally used in the earlier calculations. For a practical description of the atom–surface interaction potentials, the C3 coefficients are given for a wide range of separation distances between the considered ground states of the atoms and the wall surfaces and also for different nanotube radii. The coefficients for the graphene layer are fitted to a logistic function of the separation distance. For CNT, we find a paraboloid kind of fit dependence both on the separation distances and radii of the CNT. (paper)

  2. Imaging and nanoprobing of graphene layers for interconnects by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Graphene is a promising material to replace Cu-interconnect metallization under a width of 10 nm. We report a method for evaluating the graphene interconnect wiring structure by conductive atomic force microscopy (C-AFM), which enables the direct measurement of the two-dimensional (2D) resistance distribution and the coverage evaluation of multilayer graphene (MLG) grown on Ni interconnects using a 300 mm damascene process. The resistivity of exfoliated two-layer graphene was measured and a reasonable value of 30 µΩ·cm was obtained. We also measured the resistance of the MLG/Ni stack of 350 nm L/S patterns and confirmed the conduction paths of the MLG/Ni stack. It is demonstrated that the coverage of MLG on Ni interconnects can be estimated more precisely by C-AFM than by backscattered electron scanning electron microscopy (BSE-SEM) observation. C-AFM is demonstrated to be a potential technique for the local conductance evaluation of next-generation interconnects. (author)

  3. Interactions between fluorescence of atomically layered graphene oxide and metallic nanoparticles

    Science.gov (United States)

    Wang, Yu; Li, Shao-Sian; Yeh, Yun-Chieh; Yu, Chen-Chieh; Chen, Hsuen-Li; Li, Feng-Chieh; Chang, Yu-Ming; Chen, Chun-Wei

    2013-01-01

    Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp2- and sp3-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the interactions between the fluorescence of two-dimensional layered materials and the LSPR effect.Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp2- and sp3-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime. The maxima 30-fold enhancement in PL intensity is obtained with an optimized film thickness of GO, and the luminescence image from a single atomic layer GO sheet is successfully observed with the assistance of the LSPR effect. The results provide an ideal platform for exploring the

  4. Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition

    Science.gov (United States)

    Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Shaygan, Mehrdad; Turner, Kevin T.; Bargatin, Igor

    2016-04-01

    We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al2O3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young’s modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young’s modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed.

  5. Density Functional Theory Study of Atomic Layer Deposition of Zinc Oxide on Graphene

    Science.gov (United States)

    Ali, Amgad Ahmed; Hashim, Abdul Manaf

    2015-07-01

    The dissociation of zinc ions (Zn2+) from vapor-phase zinc acetylacetonate, Zn(C5H7O2)2, or Zn(acac)2 and its adsorption onto graphene oxide via atomic layer deposition (ALD) were studied using a quantum mechanics approach. Density functional theory (DFT) was used to obtain an approximate solution to the Schrödinger equation. The graphene oxide cluster model was used to represent the surface of the graphene film after pre-oxidation. In this study, the geometries of reactants, transition states, and products were optimized using the B3LYB/6-31G** level of theory or higher. Furthermore, the relative energies of the various intermediates and products in the gas-phase radical mechanism were calculated at the B3LYP/6-311++G** and MP2/6-311 + G(2df,2p) levels of theory. Additionally, a molecular orbital (MO) analysis was performed for the products of the decomposition of the Zn(acac)2 complex to investigate the dissociation of Zn2+ and the subsequent adsorption of H atoms on the C5H7O2 cluster to form acetylacetonate enol. The reaction energies were calculated, and the reaction mechanism was accordingly proposed. A simulation of infrared (IR) properties was performed using the same approach to support the proposed mechanism via a complete explanation of bond forming and breaking during each reaction step.

  6. Single-Atom Pd₁/Graphene Catalyst Achieved by Atomic Layer Deposition: Remarkable Performance in Selective Hydrogenation of 1,3-Butadiene.

    Science.gov (United States)

    Yan, Huan; Cheng, Hao; Yi, Hong; Lin, Yue; Yao, Tao; Wang, Chunlei; Li, Junjie; Wei, Shiqiang; Lu, Junling

    2015-08-26

    We reported that atomically dispersed Pd on graphene can be fabricated using the atomic layer deposition technique. Aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and X-ray absorption fine structure spectroscopy both confirmed that isolated Pd single atoms dominantly existed on the graphene support. In selective hydrogenation of 1,3-butadiene, the single-atom Pd1/graphene catalyst showed about 100% butenes selectivity at 95% conversion at a mild reaction condition of about 50 °C, which is likely due to the changes of 1,3-butadiene adsorption mode and enhanced steric effect on the isolated Pd atoms. More importantly, excellent durability against deactivation via either aggregation of metal atoms or carbonaceous deposits during a total 100 h of reaction time on stream was achieved. Therefore, the single-atom catalysts may open up more opportunities to optimize the activity, selectivity, and durability in selective hydrogenation reactions. PMID:26268551

  7. Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO

    Science.gov (United States)

    Park, Kyung Sun; Kim, Sejoon; Kim, Hongbum; Kwon, Deokhyeon; Koo Lee, Yong-Eun; Min, Sung-Wook; Im, Seongil; Choi, Hyoung Joon; Lim, Seulky; Shin, Hyunjung; Koo, Sang Man; Sung, Myung Mo

    2015-10-01

    Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also

  8. Seeding Atomic Layer Deposition of High-k Dielectrics on Epitaxial Graphene with Organic Self-assembled Monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Alaboson, Justice M. P.; Wang, Qing Hua; Emery, J.D.; Lipson, Albert L; Bedzyk, M.J.; Elam, Jeffrey W.; Pellin, Michael J.; Hersam, Mark C.

    2011-06-28

    The development of high-performance graphene-based nanoelectronics requires the integration of ultrathin and pinhole-free high-k dielectric films with graphene at the wafer scale. Here, we demonstrate that self-assembled monolayers of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) act as effective organic seeding layers for atomic layer deposition (ALD) of HfO₂ and Al₂O₃ on epitaxial graphene on SiC(0001). The PTCDA is deposited via sublimation in ultrahigh vacuum and shown to be highly ordered with low defect density by molecular-resolution scanning tunneling microscopy. Whereas identical ALD conditions lead to incomplete and rough dielectric deposition on bare graphene, the chemical functionality provided by the PTCDA seeding layer yields highly uniform and conformal films. The morphology and chemistry of the dielectric films are characterized by atomic force microscopy, ellipsometry, cross-sectional scanning electron microscopy, and X-ray photoelectron spectroscopy, while high-resolution X-ray reflectivity measurements indicate that the underlying graphene remains intact following ALD. Using the PTCDA seeding layer, metal-oxide-graphene capacitors fabricated with a 3 nm Al₂O₃ and 10 nm HfO₂ dielectric stack show high capacitance values of ~700 nF/cm² and low leakage currents of ~5 × 10{sup –9} A/cm² at 1 V applied bias. These results demonstrate the viability of sublimated organic self-assembled monolayers as seeding layers for high-k dielectric films in graphene-based nanoelectronics.

  9. Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers.

    Science.gov (United States)

    Alaboson, Justice M P; Wang, Qing Hua; Emery, Jonathan D; Lipson, Albert L; Bedzyk, Michael J; Elam, Jeffrey W; Pellin, Michael J; Hersam, Mark C

    2011-06-28

    The development of high-performance graphene-based nanoelectronics requires the integration of ultrathin and pinhole-free high-k dielectric films with graphene at the wafer scale. Here, we demonstrate that self-assembled monolayers of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) act as effective organic seeding layers for atomic layer deposition (ALD) of HfO(2) and Al(2)O(3) on epitaxial graphene on SiC(0001). The PTCDA is deposited via sublimation in ultrahigh vacuum and shown to be highly ordered with low defect density by molecular-resolution scanning tunneling microscopy. Whereas identical ALD conditions lead to incomplete and rough dielectric deposition on bare graphene, the chemical functionality provided by the PTCDA seeding layer yields highly uniform and conformal films. The morphology and chemistry of the dielectric films are characterized by atomic force microscopy, ellipsometry, cross-sectional scanning electron microscopy, and X-ray photoelectron spectroscopy, while high-resolution X-ray reflectivity measurements indicate that the underlying graphene remains intact following ALD. Using the PTCDA seeding layer, metal-oxide-graphene capacitors fabricated with a 3 nm Al(2)O(3) and 10 nm HfO(2) dielectric stack show high capacitance values of ∼700 nF/cm(2) and low leakage currents of ∼5 × 10(-9) A/cm(2) at 1 V applied bias. These results demonstrate the viability of sublimated organic self-assembled monolayers as seeding layers for high-k dielectric films in graphene-based nanoelectronics. PMID:21553842

  10. Probing the Structure and Chemistry of Perylenetetracarboxylic Dianhydride on Graphene Before and After Atomic Layer Deposition of Alumina.

    Science.gov (United States)

    Johns, James E; Karmel, Hunter J; Alaboson, Justice M P; Hersam, Mark C

    2012-07-11

    The superlative electronic properties of graphene suggest its use as the foundation of next generation integrated circuits. However, this application requires precise control of the interface between graphene and other materials, especially the metal oxides that are commonly used as gate dielectrics. Towards that end, organic seeding layers have been empirically shown to seed ultrathin dielectric growth on graphene via atomic layer deposition (ALD), although the underlying chemical mechanisms and structural details of the molecule/dielectric interface remain unknown. Here, confocal resonance Raman spectroscopy is employed to quantify the structure and chemistry of monolayers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on graphene before and after deposition of alumina with the ALD precursors trimethyl aluminum (TMA) and water. Photoluminescence measurements provide further insight into the details of the growth mechanism, including the transition between layer-by-layer growth and island formation. Overall, these results reveal that PTCDA is not consumed during ALD, thereby preserving a well-defined and passivating organic interface between graphene and deposited dielectric thin films. PMID:22905282

  11. Quantitative secondary electron imaging for work function extraction at atomic level and layer identification of graphene

    Science.gov (United States)

    Zhou, Yangbo; Fox, Daniel S.; Maguire, Pierce; O'Connell, Robert; Masters, Robert; Rodenburg, Cornelia; Wu, Hanchun; Dapor, Maurizio; Chen, Ying; Zhang, Hongzhou

    2016-02-01

    Two-dimensional (2D) materials usually have a layer-dependent work function, which require fast and accurate detection for the evaluation of their device performance. A detection technique with high throughput and high spatial resolution has not yet been explored. Using a scanning electron microscope, we have developed and implemented a quantitative analytical technique which allows effective extraction of the work function of graphene. This technique uses the secondary electron contrast and has nanometre-resolved layer information. The measurement of few-layer graphene flakes shows the variation of work function between graphene layers with a precision of less than 10 meV. It is expected that this technique will prove extremely useful for researchers in a broad range of fields due to its revolutionary throughput and accuracy.

  12. Topography, complex refractive index, and conductivity of graphene layers measured by correlation of optical interference contrast, atomic force, and back scattered electron microscopy

    International Nuclear Information System (INIS)

    The optical phase shift by reflection on graphene is measured by interference contrast microscopy. The height profile across graphene layers on 300 nm thick SiO2 on silicon is derived from the phase profile. The complex refractive index and conductivity of graphene layers on silicon with 2 nm thin SiO2 are evaluated from a phase profile, while the height profile of the layers is measured by atomic force microscopy. It is observed that the conductivity measured on thin SiO2 is significantly greater than on thick SiO2. Back scattered electron contrast of graphene layers is correlated to the height of graphene layers

  13. Enhanced Breakdown Reliability and Spatial Uniformity of Atomic Layer Deposited High-k Gate Dielectrics on Graphene via Organic Seeding Layers

    Science.gov (United States)

    Sangwan, Vinod; Jariwala, Deep; Filippone, Stephen; Karmel, Hunter; Johns, James; Alaboson, Justice; Marks, Tobin; Lauhon, Lincoln; Hersam, Mark

    2013-03-01

    Ultra-thin high- κ top-gate dielectrics are essential for high-speed graphene-based nanoelectronic circuits. Motivated by the need for high reliability and spatial uniformity, we report here the first statistical analysis of the breakdown characteristics of dielectrics grown on graphene. Based on these measurements, a rational approach is devised that simultaneously optimizes the gate capacitance and the key parameters of large-area uniformity and dielectric strength. In particular, vertically heterogeneous oxide stacks grown via atomic-layer deposition (ALD) seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) organic monolayer result in improved reliability (Weibull shape parameter β > 25) compared to the control dielectric directly grown on graphene without PTCDA (β 7 MV/cm) that is comparable to that of the control dielectric grown on Si substrates.

  14. Bottom-gate coplanar graphene transistors with enhanced graphene adhesion on atomic layer deposition Al{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Park, Dong-Wook; Mikael, Solomon; Chang, Tzu-Hsuan; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Gong, Shaoqin [Department of Biomedical Engineering, and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2015-03-09

    A graphene transistor with a bottom-gate coplanar structure and an atomic layer deposition (ALD) aluminum oxide (Al{sub 2}O{sub 3}) gate dielectric is demonstrated. Wetting properties of ALD Al{sub 2}O{sub 3} under different deposition conditions are investigated by measuring the surface contact angle. It is observed that the relatively hydrophobic surface is suitable for adhesion between graphene and ALD Al{sub 2}O{sub 3}. To achieve hydrophobic surface of ALD Al{sub 2}O{sub 3}, a methyl group (CH{sub 3})-terminated deposition method has been developed and compared with a hydroxyl group (OH)-terminated deposition. Based on this approach, bottom-gate coplanar graphene field-effect transistors are fabricated and characterized. A post-thermal annealing process improves the performance of the transistors by enhancing the contacts between the source/drain metal and graphene. The fabricated transistor shows an I{sub on}/I{sub off} ratio, maximum transconductance, and field-effect mobility of 4.04, 20.1 μS at V{sub D} = 0.1 V, and 249.5 cm{sup 2}/V·s, respectively.

  15. Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer.

    Science.gov (United States)

    Heilmann, Martin; Munshi, A Mazid; Sarau, George; Göbelt, Manuela; Tessarek, Christian; Fauske, Vidar T; van Helvoort, Antonius T J; Yang, Jianfeng; Latzel, Michael; Hoffmann, Björn; Conibeer, Gavin; Weman, Helge; Christiansen, Silke

    2016-06-01

    The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts. PMID:27124605

  16. Atomic layer deposition of ZrO2 for graphene-based multilayer structures: In situ and ex situ characterization of growth process

    International Nuclear Information System (INIS)

    Real time monitoring of atomic layer deposition by quartz crystal microbalance (QCM) was used to follow the growth of ZrO2 thin films on graphene. The films were grown from ZrCl4 and H2O on graphene prepared by chemical vapor deposition method on 100-nm thick nickel film or on Cu-foil and transferred onto QCM sensor. The deposition was performed at a substrate temperature of 190 C. The growth of the dielectric film on graphene was significantly retarded compared to the process carried out on QCM without graphene. After the deposition of dielectric films, the basic structure of graphene was retained. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors.

    Science.gov (United States)

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-01-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8" glass wafer. PMID:26861833

  18. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

    Science.gov (United States)

    Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

    2016-02-01

    The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer.

  19. Discrete atomic layers at the molecular level

    International Nuclear Information System (INIS)

    In this review, we deal with the syntheses of large discrete atomic layers at the molecular level. Spectroscopic measurements as well as X-ray crystallographic analyses lead to unambiguous characterizations of these layers. The molecular atomic layers can be considered to be parts of graphenes and related atomic layers, thereby helping to understand such indefinitely huge atomic layers or serving as seeds for the controlled synthesis of nanocarbons. (author)

  20. Dispersion coefficients for the interactions of the alkali and alkaline-earth ions and inert gas atoms with a graphene layer

    CERN Document Server

    Kaur, Kiranpreet; Sahoo, B K

    2015-01-01

    Largely motivated by a number of applications, the van der Waals dispersion coefficients ($C_3$s) of the alkali ions (Li$^+$, Na$^+$, K$^+$ and Rb$^+$), the alkaline-earth ions (Ca$^+$, Sr$^+$, Ba$^+$ and Ra$^+$) and the inert gas atoms (He, Ne, Ar and Kr) with a graphene layer are determined precisely within the framework of Dirac model. For these calculations, we have evaluated the dynamic polarizabilities of the above atomic systems very accurately by evaluating the transition matrix elements employing relativistic many-body methods and using the experimental values of the excitation energies. The dispersion coefficients are, finally, given as functions of the separation distance of an atomic system from the graphene layer and the ambiance temperature during the interactions. For easy extraction of these coefficients, we give a logistic fit to the functional forms of the dispersion coefficients in terms of the separation distances at the room temperature.

  1. Dispersion coefficients for the interactions of the alkali-metal and alkaline-earth-metal ions and inert-gas atoms with a graphene layer

    Science.gov (United States)

    Kaur, Kiranpreet; Arora, Bindiya; Sahoo, B. K.

    2015-09-01

    Largely motivated by a number of applications, the van der Waals dispersion coefficients C3 of the alkali-metal ions Li+,Na+,K+, and Rb+, the alkaline-earth-metal ions Ca+,Sr+,Ba+, and Ra+, and the inert-gas atoms He, Ne, Ar, and Kr with a graphene layer are determined precisely within the framework of the Dirac model. For these calculations, we evaluate the dynamic polarizabilities of the above atomic systems very accurately by evaluating the transition matrix elements employing relativistic many-body methods and using the experimental values of the excitation energies. The dispersion coefficients are given as functions of the separation distance of an atomic system from the graphene layer and the ambiance temperature during the interactions. For easy extraction of these coefficients, we give a logistic fit to the functional forms of the dispersion coefficients in terms of the separation distances at room temperature.

  2. Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition.

    Science.gov (United States)

    Zheng, Li; Cheng, Xinhong; Yu, Yuehui; Xie, Yahong; Li, Xiaolong; Wang, Zhongjian

    2015-02-01

    Graphene has been drawing worldwide attention since its discovery in 2004. In order to realize graphene-based devices, thin, uniform-coverage and pinhole-free dielectric films with high permittivity on top of graphene are required. Here we report the direct growth of Al2O3-doped HfO2 films onto graphene by H2O-based atom layer deposition (ALD). Al2O3-onto-HfO2 stacks benefited the doping of Al2O3 into HfO2 matrices more than HfO2-onto-Al2O3 stacks did due to the micro-molecular property of Al2O3 and the high chemical activity of trimethylaluminum (TMA). Al2O3 acted as a network modifier, maintained the amorphous structure of the film even to 800 °C, and made the film smooth with a root mean square (RMS) roughness of 0.8 nm, comparable to the surface of pristine graphene. The capacitance and the relative permittivity of Al2O3-onto-HfO2 stacks were up to 1.18 μF cm(-2) and 12, respectively, indicating the high quality of Al2O3-doped HfO2 films on graphene. Moreover, the growth process of Al2O3-doped HfO2 films introduced no detective defects into graphene confirmed by Raman measurements. PMID:25519447

  3. Charge Transfer Properties Through Graphene Layers in Gas Detectors

    CERN Document Server

    Thuiner, P; Jackman, R.B.; Müller, H.; Nguyen, T.T.; Oliveri, E.; Pfeiffer, D.; Resnati, F.; Ropelewski, L.; Smith, J.A.; van Stenis, M.; Veenhof, R.

    2015-01-01

    Graphene is a single layer of carbon atoms arranged in a honeycomb lattice with remarkable mechanical, electrical and optical properties. For the first time graphene layers suspended on copper meshes were installed into a gas detector equipped with a gaseous electron multiplier. Measurements of low energy electron and ion transfer through graphene were conducted. In this paper we describe the sample preparation for suspended graphene layers, the testing procedures and we discuss the preliminary results followed by a prospect of further applications.

  4. In situ imaging and control of layer-by-layer femtosecond laser thinning of graphene

    Science.gov (United States)

    Li, D. W.; Zhou, Y. S.; Huang, X.; Jiang, L.; Silvain, J.-F.; Lu, Y. F.

    2015-02-01

    Although existing methods (chemical vapor deposition, mechanical exfoliation, etc.) are available to produce graphene, the lack of thickness control limits further graphene applications. In this study, we demonstrate an approach to precisely thin graphene films to a specific thickness using femtosecond (fs) laser raster scanning. By using appropriate laser fluence and scanning times, graphene thinning with an atomic layer precision, namely layer-by-layer graphene removal, has been realized. The fs laser used was configured in a four-wave mixing (FWM) system which can be used to distinguish graphene layer thickness and count the number of layers using the linear relationship between the FWM signal intensity and the graphene thickness. Furthermore, FWM imaging has been successfully applied to achieve in situ, real-time monitoring of the fs laser graphene thinning process. This method can not only realize the large-scale thinning of graphene with atomic layer precision, but also provide in situ, rapid imaging capability of graphene for an accurate assessment of the number of layers.Although existing methods (chemical vapor deposition, mechanical exfoliation, etc.) are available to produce graphene, the lack of thickness control limits further graphene applications. In this study, we demonstrate an approach to precisely thin graphene films to a specific thickness using femtosecond (fs) laser raster scanning. By using appropriate laser fluence and scanning times, graphene thinning with an atomic layer precision, namely layer-by-layer graphene removal, has been realized. The fs laser used was configured in a four-wave mixing (FWM) system which can be used to distinguish graphene layer thickness and count the number of layers using the linear relationship between the FWM signal intensity and the graphene thickness. Furthermore, FWM imaging has been successfully applied to achieve in situ, real-time monitoring of the fs laser graphene thinning process. This method can not

  5. Atomic covalent functionalization of graphene.

    Science.gov (United States)

    Johns, James E; Hersam, Mark C

    2013-01-15

    Although graphene's physical structure is a single atom thick, two-dimensional, hexagonal crystal of sp(2) bonded carbon, this simple description belies the myriad interesting and complex physical properties attributed to this fascinating material. Because of its unusual electronic structure and superlative properties, graphene serves as a leading candidate for many next generation technologies including high frequency electronics, broadband photodetectors, biological and gas sensors, and transparent conductive coatings. Despite this promise, researchers could apply graphene more routinely in real-world technologies if they could chemically adjust graphene's electronic properties. For example, the covalent modification of graphene to create a band gap comparable to silicon (∼1 eV) would enable its use in digital electronics, and larger band gaps would provide new opportunities for graphene-based photonics. Toward this end, researchers have focused considerable effort on the chemical functionalization of graphene. Due to its high thermodynamic stability and chemical inertness, new methods and techniques are required to create covalent bonds without promoting undesirable side reactions or irreversible damage to the underlying carbon lattice. In this Account, we review and discuss recent theoretical and experimental work studying covalent modifications to graphene using gas phase atomic radicals. Atomic radicals have sufficient energy to overcome the kinetic and thermodynamic barriers associated with covalent reactions on the basal plane of graphene but lack the energy required to break the C-C sigma bonds that would destroy the carbon lattice. Furthermore, because they are atomic species, radicals substantially reduce the likelihood of unwanted side reactions that confound other covalent chemistries. Overall, these methods based on atomic radicals show promise for the homogeneous functionalization of graphene and the production of new classes of two

  6. Ultimate permeation across atomically thin porous graphene.

    Science.gov (United States)

    Celebi, Kemal; Buchheim, Jakob; Wyss, Roman M; Droudian, Amirhossein; Gasser, Patrick; Shorubalko, Ivan; Kye, Jeong-Il; Lee, Changho; Park, Hyung Gyu

    2014-04-18

    A two-dimensional (2D) porous layer can make an ideal membrane for separation of chemical mixtures because its infinitesimal thickness promises ultimate permeation. Graphene--with great mechanical strength, chemical stability, and inherent impermeability--offers a unique 2D system with which to realize this membrane and study the mass transport, if perforated precisely. We report highly efficient mass transfer across physically perforated double-layer graphene, having up to a few million pores with narrowly distributed diameters between less than 10 nanometers and 1 micrometer. The measured transport rates are in agreement with predictions of 2D transport theories. Attributed to its atomic thicknesses, these porous graphene membranes show permeances of gas, liquid, and water vapor far in excess of those shown by finite-thickness membranes, highlighting the ultimate permeation these 2D membranes can provide. PMID:24744372

  7. A polymer composite consists of electrochemical reduced graphene oxide/polyimide/chemical reduced graphene oxide for effective preparation of SnSe by electrochemical atomic layer deposition method with enhanced electrochemical performance and surface area

    International Nuclear Information System (INIS)

    A novel polymer electrode is prepared by incorporating polyimide (PI) with chemical reduced graphene oxide (rGO). Then modified this PI/RGO electrode with a layer of electrochemical-reduced graphene oxide (EGO), and by this way the expected EGO/PI/RGO electrode is obtained. Compared with bare PI/RGO film, the hybrid EGO/PI/RGO electrode own large active area and excellent conductivity, which offers more extensive field to prepare compound and more sensitive surface to detect electrochemical signal. SnSe is prepared on this modified substrate by electrochemical atomic layer deposition (EC-ALD) technology. Moreover, SnSe deposit on bare PI/RGO electrode by EC-ALD method is also done for comparison. Open-circuit potential (OCP) and Mott–Schottky measurement indicated the obtained SnSe is a p-type semiconductor. Moreover, the semiconductor appears more excellent photoelectric property on modified electrode

  8. Atomic Layer Epitaxy of h-BN(0001) Multilayers on Co(0001) and Molecular Beam Epitaxy Growth of Graphene on h-BN(0001)/Co(0001).

    Science.gov (United States)

    Driver, M Sky; Beatty, John D; Olanipekun, Opeyemi; Reid, Kimberly; Rath, Ashutosh; Voyles, Paul M; Kelber, Jeffry A

    2016-03-22

    The direct growth of hexagonal boron nitride (h-BN) by industrially scalable methods is of broad interest for spintronic and nanoelectronic device applications. Such applications often require atomically precise control of film thickness and azimuthal registry between layers and substrate. We report the formation, by atomic layer epitaxy (ALE), of multilayer h-BN(0001) films (up to 7 monolayers) on Co(0001). The ALE process employs BCl3/NH3 cycles at 600 K substrate temperature. X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) data show that this process yields an increase in h-BN average film thickness linearly proportional to the number of BCl3/NH3 cycles, with BN layers in azimuthal registry with each other and with the Co(0001) substrate. LEED diffraction spot profile data indicate an average BN domain size of at least 1900 Å. Optical microscopy data indicate the presence of some domains as large as ∼20 μm. Transmission electron microscopy (TEM) and ambient exposure studies demonstrate macroscopic and microscopic continuity of the h-BN film, with the h-BN film highly conformal to the Co substrate. Photoemission data show that the h-BN(0001) film is p-type, with band bending near the Co/h-BN interface. Growth of graphene by molecular beam epitaxy (MBE) is observed on the surface of multilayer h-BN(0001) at temperatures of 800 K. LEED data indicate azimuthal graphene alignment with the h-BN and Co(0001) lattices, with domain size similar to BN. The evidence of multilayer BN and graphene azimuthal alignment with the lattice of the Co(0001) substrate demonstrates that this procedure is suitable for scalable production of heterojunctions for spintronic applications. PMID:26940024

  9. Imaging of few‐layer graphene flakes

    DEFF Research Database (Denmark)

    Eriksen, René Lynge; Albrektsen, Ole; Novikov, Sergey M.;

    In this work, we successfully demonstrate how imaging ellipsometry can be applied to obtain high‐resolution thickness maps of few‐layer graphene (FLG) samples, with the results being thoroughly validated in a comparative study using several complementary techniques: Optical reflection microscopy...... (ORM), atomic force microscopy (AFM), and scanning confocal Raman microscopy. The thickness map, revealing distinct terraces separated by steps corresponding to mono‐ and bilayers of graphene, is extracted from a pixel‐to‐pixel fitting of ellipsometric spectra using optical constants derived by fitting...... slab model calculations to averaged spectra collected in large homogenous sample areas. An analysis of reflection spectra and contrast images acquired by ORM confirm the results by quantifying the number of graphene layers and retrieving the FLG optical constants using a simple Fresnel‐law‐based slab...

  10. Proximity effects in cold atom artificial graphene

    CERN Document Server

    Grass, Tobias; Tarruell, Leticia; Pellegrini, Vittorio; Lewenstein, Maciej

    2016-01-01

    Cold atoms in an optical lattice with brick-wall geometry have been used to mimic graphene, a two-dimensional material with characteristic Dirac excitations. Here we propose to bring such artificial graphene into the proximity of a second atomic layer with a square lattice geometry. For non-interacting fermions, we find that such bilayer system undergoes a phase transition from a graphene-like semi-metal phase, characterized by a band structure with Dirac points, to a gapped band insulator phase. In the presence of attractive interactions between fermions with pseudospin-1/2 degree of freedom, a competition between semi-metal and superfluid behavior is found at the mean-field level. Upon tuning the coupling between the layers, the system exhibits re-entrant superfluid phases. Using the quantum Monte Carlo method, we also investigate the case of strong repulsive interactions. In the Mott phase, each layer exhibits a different amount of long-range magnetic order. Upon coupling both layers, a valence-bond crysta...

  11. Detection of gas atoms via vibration of graphenes

    International Nuclear Information System (INIS)

    The application of single-layered graphene sheets as mass sensors in detection of noble gases via a vibration analysis of graphenes is investigated using molecular dynamics simulations. An index based on frequency shifts of the graphenes attached by the distinct noble gas atoms is defined and examined to measure the sensitivity of the sensors. The dependence of number and location of gas atoms, size of graphene sheets, and type of restrained boundary of the sheets on the sensitivity is particularly studied. The simulation results indicate the resolution of a mass sensor made of a square graphene sheet with a size of 10 nm can achieve an order of 10-6 femtograms and the mass sensitivity can be enhanced with a decrease in sizes of graphenes. -- Highlights: → The potential application of graphenes as sensors in detection of gas atoms is revealed. → A resolution around 10-6 femtograms of gas atoms by graphene sensors is reported. → The sensitivity of the sensors is found to be increased with shorter graphenes with stiffer ends. → The random locations of gas atoms have less effect on the detection effect.

  12. Detection of gas atoms via vibration of graphenes

    Energy Technology Data Exchange (ETDEWEB)

    Arash, Behrouz [Department of Mechanical and Manufacturing Engineering, University of Manitoba, Winnipeg, Manitoba R3T 5V6 (Canada); Wang, Quan, E-mail: q_wang@umanitoba.ca [Department of Mechanical and Manufacturing Engineering, University of Manitoba, Winnipeg, Manitoba R3T 5V6 (Canada); Duan, Wen Hui [Department of Civil Engineering, Monash University, Clayton, VIC 3168 (Australia)

    2011-06-13

    The application of single-layered graphene sheets as mass sensors in detection of noble gases via a vibration analysis of graphenes is investigated using molecular dynamics simulations. An index based on frequency shifts of the graphenes attached by the distinct noble gas atoms is defined and examined to measure the sensitivity of the sensors. The dependence of number and location of gas atoms, size of graphene sheets, and type of restrained boundary of the sheets on the sensitivity is particularly studied. The simulation results indicate the resolution of a mass sensor made of a square graphene sheet with a size of 10 nm can achieve an order of 10{sup -6} femtograms and the mass sensitivity can be enhanced with a decrease in sizes of graphenes. -- Highlights: → The potential application of graphenes as sensors in detection of gas atoms is revealed. → A resolution around 10{sup -6} femtograms of gas atoms by graphene sensors is reported. → The sensitivity of the sensors is found to be increased with shorter graphenes with stiffer ends. → The random locations of gas atoms have less effect on the detection effect.

  13. Detection of gas atoms via vibration of graphenes

    Science.gov (United States)

    Arash, Behrouz; Wang, Quan; Duan, Wen Hui

    2011-06-01

    The application of single-layered graphene sheets as mass sensors in detection of noble gases via a vibration analysis of graphenes is investigated using molecular dynamics simulations. An index based on frequency shifts of the graphenes attached by the distinct noble gas atoms is defined and examined to measure the sensitivity of the sensors. The dependence of number and location of gas atoms, size of graphene sheets, and type of restrained boundary of the sheets on the sensitivity is particularly studied. The simulation results indicate the resolution of a mass sensor made of a square graphene sheet with a size of 10 nm can achieve an order of 10 femtograms and the mass sensitivity can be enhanced with a decrease in sizes of graphenes.

  14. Characterization of metal oxide layers grown on CVD graphene

    International Nuclear Information System (INIS)

    Growth of a fully oxidized aluminum oxide layer with low surface roughness on graphene grown by chemical vapor deposition is demonstrated. This is accomplished by the deposition of a 0.2 nm thick titanium seed layer on the graphene prior to the deposition of the aluminum under ultra high vacuum conditions, which was subsequently oxidized. The stoichiometry and surface roughness of the oxide layers were measured for a range of titanium and aluminum depositions utilizing ex situ x-ray photoelectron spectrometry and atomic force microscopy. These fully oxidized films are expected to produce good dielectric layers for use in graphene based electronic devices.

  15. Metal Oxide Nanoparticle Growth on Graphene via Chemical Activation with Atomic Oxygen

    OpenAIRE

    Johns, James E.; Alaboson, Justice M. P.; Patwardhan, Sameer; Ryder, Christopher R.; Schatz, George C.; Hersam, Mark C.

    2013-01-01

    Chemically interfacing the inert basal plane of graphene with other materials has limited the development of graphene-based catalysts, composite materials, and devices. Here, we overcome this limitation by chemically activating epitaxial graphene on SiC(0001) using atomic oxygen. Atomic oxygen produces epoxide groups on graphene, which act as reactive nucleation sites for zinc oxide nanoparticle growth using the atomic layer deposition precursor diethyl zinc. In particular, exposure of epoxid...

  16. Atomic Covalent Functionalization of Graphene

    OpenAIRE

    Johns, James E.; Hersam, Mark C.

    2012-01-01

    Although graphene’s physical structure is a single atom thick, two-dimensional, hexagonal crystal of sp2 bonded carbon, this simple description belies the myriad interesting and complex physical properties attributed to this fascinating material. Because of its unusual electronic structure and superlative properties, graphene serves as a leading candidate for many next generation technologies including high frequency electronics, broadband photodetectors, biological and gas sensors, and trans...

  17. Nano-soldering to single atomic layer

    Science.gov (United States)

    Girit, Caglar O.; Zettl, Alexander K.

    2011-10-11

    A simple technique to solder submicron sized, ohmic contacts to nanostructures has been disclosed. The technique has several advantages over standard electron beam lithography methods, which are complex, costly, and can contaminate samples. To demonstrate the soldering technique graphene, a single atomic layer of carbon, has been contacted, and low- and high-field electronic transport properties have been measured.

  18. Atomic bonding between metal and graphene

    KAUST Repository

    Wang, Hongtao

    2013-03-07

    To understand structural and chemical properties of metal-graphene composites, it is crucial to unveil the chemical bonding along the interface. We provide direct experimental evidence of atomic bonding between typical metal nano structures and graphene, agreeing well with density functional theory studies. Single Cr atoms are located in the valleys of a zigzag edge, and few-atom ensembles preferentially form atomic chains by self-assembly. Low migration barriers lead to rich dynamics of metal atoms and clusters under electron irradiation. We demonstrate no electron-instigated interaction between Cr clusters and pristine graphene, though Cr has been reported to be highly reactive to graphene. The metal-mediated etching is a dynamic effect between metal clusters and pre-existing defects. The resolved atomic configurations of typical nano metal structures on graphene offer insight into modeling and simulations on properties of metal-decorated graphene for both catalysis and future carbon-based electronics. © 2013 American Chemical Society.

  19. Determination of graphene layer thickness using optical image processing

    Science.gov (United States)

    Cook, Monica; Mani, R. G.

    2015-03-01

    Graphene, a single atomic layer of carbon arranged in a hexagonal lattice structure, is a valuable material in a wide range of research. A significant impediment to graphene research is the need to manually characterize the thickness of high-quality graphene produced via mechanical exfoliation. Traditional methods of characterizing the layer thickness of graphene, including Raman spectroscopy and atomic force microscopy, require expensive equipment and can be damaging to the graphene sample. We examine here a known alternative method for quantitatively determining the layer thickness of graphene on SiO2/Si based on optical image processing, which is quick, inexpensive, and non-invasive. Using RGB images of a candidate graphene sample and a background image, taken with a simple optical microscope and charge-coupled device (CCD) camera, we process the images with an algorithm based on Fresnel's law to obtain the contrast spectrum. Each layer of graphene exhibits a unique contrast spectrum for its particular substrate, which is measured and used for accurate layer identification. We also discuss how this algorithm can be generalized to characterize the thickness of other promising two-dimensional materials as well as more complex structures on a variety of substrates.

  20. Electronic transport properties of few-layer graphene materials

    OpenAIRE

    Russo, S.; Craciun, M. F.; Khodkov, T.; Koshino, M.; Yamamoto, M.; Tarucha, S.

    2011-01-01

    Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane present in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobilities larger than the typical mobilities found in silicon. The significance played by this new m...

  1. Manipulation and Graphene local oxidation lithography using an Atomic Force Microscope

    International Nuclear Information System (INIS)

    in this work, SPM nano lithography in Atomic Force Microscope mode was used to etching and manipulate graphene films on a nanoscopic length scale in order to produce electronic nano structures. By means of local anodic oxidation with an Atomic Force Microscope which is an electrochemical process applying voltage between Atomic Force Microscope probe and graphene surface, we are able to structure isolating trenches into single-layer and few-layer graphene flakes. Trench sizes of less than 30 nm in width are attainable with this technique. Besides oxidation, the influence of mechanical peeling and scratching with an Atomic Force Microscope of few layer graphene sheets was investigated.

  2. Atomic layer-by-layer deposition of h-BN(0001) on cobalt: a building block for spintronics and graphene electronics

    International Nuclear Information System (INIS)

    X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and Raman measurements demonstrate that macroscopically continuous hexagonal BN(0001) (h-BN) multilayer layer films can be grown by atomic layer deposition on Co(0001) substrates. The growth procedure involves alternating exposures of BCl3 and NH3 at 550 K, followed by annealing in ultrahigh vacuum above 700 K to induce long-range order. XPS data demonstrate that the films have a consistent B:N atomic ratio of 1:1. LEED data show that the BN layers are azimuthally in registry, with an estimated domain size of ∼170 Å. The films are continuous over a macroscopic (1 cm × 1 cm) area as demonstrated by the fact that exposure of a h-BN(0001) bi-layer film to ambient at room temperature yields no observable Co oxidation, although some N oxidation is observed, and long range order is lost. The ability to grow large area, continuous multilayer BN films on Co, with atomic level control of film thickness, makes possible an array of magnetic tunnel junction and spin filter applications. (paper)

  3. Organic doping of rotated double layer graphene

    Science.gov (United States)

    George, Lijin; Jaiswal, Manu

    2016-05-01

    Charge transfer techniques have been extensively used as knobs to tune electronic properties of two- dimensional systems, such as, for the modulation of conductivity mobility of single layer graphene and for opening the bandgap in bilayer graphene. The charge injected into the graphene layer shifts the Fermi level away from the minimum density of states point (Dirac point). In this work, we study charge transfer in rotated double-layer graphene achieved by the use of organic dopant, Tetracyanoquinodimethane. Naturally occurring bilayer graphene has a well-defined A-B stacking whereas in rotated double-layer the two graphene layers are randomly stacked with different rotational angles. This rotation is expected to significantly alter the interlayer interaction. Double-layer samples are prepared using layer-by-layer assembly of chemical vapor deposited single-layer graphene and they are identified by characteristic resonance in the Raman spectrum. The charge transfer and distribution of charges between the two graphene layers is studied using Raman spectroscopy and the results are compared with that for single-layer and A-B stacked bilayer graphene doped under identical conditions.

  4. Twisted bi-layer graphene: microscopic rainbows

    OpenAIRE

    Campos-Delgado, J.; Algara-Siller, G.; Santos, C. N.; Kaiser, U.; Raskin, J.-P.

    2013-01-01

    Twisted bi-layer graphene (tBLG) has recently attracted interest due to the peculiar electrical properties that arise from its random rotational configurations. Our experiments on CVD-grown graphene from Cu foil and transferred onto Si substrates, with an oxide layer of 100 nm, reveal naturally-produced bi-layer graphene patches which present different colorations when shined with white light. In particular yellow-, pink- and blue- colored areas are evidenced. Combining optical microscopy, Ra...

  5. Graphene as an anti-corrosion coating layer.

    Science.gov (United States)

    Kyhl, Line; Nielsen, Sune Fuglsang; Čabo, Antonija Grubišić; Cassidy, Andrew; Miwa, Jill A; Hornekær, Liv

    2015-01-01

    Graphene, a single layer of carbon atoms arranged in an aromatic hexagonal lattice, has recently drawn attention as a potential coating material due to its impermeability, thermodynamic stability, transparency and flexibility. Here, the effectiveness of a model system, a graphene covered Pt(100) surface, for studying the anti-corrosion properties of graphene, has been evaluated. Chemical vapour deposition techniques were used to cover the single crystal surface with a complete layer of high-quality graphene and the surface was characterised after exposure to corrosive environments with scanning tunnelling microscopy (STM) and Raman spectroscopy. Graphene covered Pt samples were exposed to: (i) ambient atmosphere for 6 months at room temperature and 60 °C for 75 min, (ii) Milli-Q water for 14 hours at room temperature and 60 °C for 75 min, and (iii) saltwater (0.513 M NaCl) for 75 min at room temperature and 60 °C. STM provides atomic resolution images, which show that the graphene layer and the underlying surface reconstruction on the Pt(100) surface remain intact over the majority of the surface under all conditions, except exposure to saltwater when the sample is kept at 60 °C. Raman spectroscopy shows a broadening of all graphene related peaks due to hybridisation between the surface Pt d-orbitals and the graphene π-bands. This hybridisation also survives exposure to all environments except saltwater on the hot surface, with the latter leading to peaks more representative of a quasi free-standing graphene layer. A mechanism explaining the corrosive effect of hot saltwater is suggested. Based on these experiments, graphene is proposed to offer protection against corrosion in all tested environments, except saltwater on a hot surface, and Raman spectroscopy is proposed as a useful method for indirectly assessing the chemical state of the Pt surface. PMID:25915827

  6. Single-layer behavior and its breakdown in twisted graphene layers

    Science.gov (United States)

    Luican-Mayer, Adina

    2013-03-01

    Stacking order plays a major role in the electronic properties of graphene layers because hopping between carbon atoms in neighboring layers is a key ingredient in their band structure. Twisting the layers away from the equilibrium Bernal stacking, which produces the superstructures known as Moiré patterns in scanning tunneling microscopy, decreases the overlap between atoms in adjacent layers and therefore significantly alters their electronic properties. Using scanning tunneling microscopy and spectroscopy, we obtained direct evidence for the electronic structure of twisted graphene layers.[2] The samples were membranes of CVD grown graphene and graphite crystals which contain areas with various twist angles. In topographic images the regions where layers are twisted away from Bernal stacking exhibit Moiré patterns with periods which depend on the twist angle. We find that the density of states on the twisted layers develops two Van Hove singularities that symmetrically flank the Dirac point at an energy that depends on the twist angle. High magnetic field scanning tunneling microscopy and Landau level spectroscopy of twisted graphene layers reveal that for twist angles exceeding ~3 degrees the low energy carriers exhibit Landau level spectra characteristic of massless Dirac fermions. Above 20 degrees the layers effectively decouple and the electronic properties are indistinguishable from those in single-layer graphene, while for smaller angles we observe a slowdown of the carrier velocity which is strongly angle dependent.[3] These results are compared with theoretical predictions. DOE-FG02-99ER45742, NSF DMR 1207108, Alcatel-Lucent

  7. Dimensional dependence of phonon transport in freestanding atomic layer systems

    Science.gov (United States)

    Kim, Duckjong; Hwangbo, Yun; Zhu, Lijing; Mag-Isa, Alexander E.; Kim, Kwang-Seop; Kim, Jae-Hyun

    2013-11-01

    Due to the fast development of nanotechnology, we have the capability of manipulating atomic layer systems such as graphene, hexagonal boron nitride and dichalcogenides. The major concern in the 2-dimensional nanostructures is how to preserve their exceptional single-layer properties in 3-dimensional bulk structures. In this study, we report that the extreme phonon transport in graphene is highly affected by the graphitic layer stacking based on experimental investigation of the thermal conduction in few-layer graphene, 1-7 layers thick, suspended over holes of various diameters. We fabricate freestanding axisymmetric graphene structures without any perturbing substrate, and measure the in-plane transport property in terms of thermal conduction by using Raman spectroscopy. From the difference in susceptibility to substrate effect, size effect on hot-spot temperature variation and layer number dependence of thermal conductivity, we show that the graphitic membranes with 2 or more layers have characteristics similar to 3-dimensional graphite, which are very different from those of 2-dimensional graphene membranes. This implies that the scattering of out-of-plane phonons by interlayer atomic coupling could be a key mechanism governing the intrinsic thermal property.Due to the fast development of nanotechnology, we have the capability of manipulating atomic layer systems such as graphene, hexagonal boron nitride and dichalcogenides. The major concern in the 2-dimensional nanostructures is how to preserve their exceptional single-layer properties in 3-dimensional bulk structures. In this study, we report that the extreme phonon transport in graphene is highly affected by the graphitic layer stacking based on experimental investigation of the thermal conduction in few-layer graphene, 1-7 layers thick, suspended over holes of various diameters. We fabricate freestanding axisymmetric graphene structures without any perturbing substrate, and measure the in-plane transport

  8. Drawing conclusions from graphene[Graphene: A sheet of crystalline carbon just one atom thick

    Energy Technology Data Exchange (ETDEWEB)

    Neto, A.C. [Boston University (United States)]. E-mail: neto@bu.edu; Guinea, F. [ICMM-CSIC (Spain); Peres, N.M. [Minho University (Portugal)

    2006-11-15

    In a time when cutting-edge scientific research is expensive and complex, it seems absurd that a breakthrough in physics could be achieved with simple adhesive tape. But in 2004, Andre Geim, Kostya Novoselov and co-workers at the University of Manchester in the UK did just that. By delicately cleaving a sample of graphite with sticky tape, they produced something that was long considered impossible: a sheet of crystalline carbon just one atom thick, known as graphene. The single-layered honeycomb structure of graphene makes it the 'mother' of all carbon-based systems: the graphite we find in our pencils is simply a stack of graphene layers; carbon nanotubes are made or rolled up sheets of graphene; and buckminsterfullerene molecules, or 'buckyballs' are nanometre-size spheres of wrapped-up graphene. These forms of carbon were isolated long before graphene and have been used in many applications, but their electric, magnetic and elastic properties all originate in the properties of graphene. In the November issue of Physics World, Antonio Castro Neto, Francisco Guinea and Nuno Miguel Peres explore the fascinating structure of graphene, which is so unique that it could allow scientists to observe strange relativistic effects at speeds much slower than the speed of light. (U.K.)

  9. Atomic layer epitaxy

    Science.gov (United States)

    Goodman, Colin H. L.; Pessa, Markus V.

    1986-08-01

    Atomic layer epitaxy (ALE) is not so much a new technique for the preparation of thin films as a novel modification to existing methods of vapor-phase epitaxy, whether physical [e.g., evaporation, at one limit molecular-beam epitaxy (MBE)] or chemical [e.g., chloride epitaxy or metalorganic chemical vapor deposition (MOCVD)]. It is a self-regulatory process which, in its simplest form, produces one complete molecular layer of a compound per operational cycle, with a greater thickness being obtained by repeated cycling. There is no growth rate in ALE as in other crystal growth processes. So far ALE has been applied to rather few materials, but, in principle, it could have a quite general application. It has been used to prepare single-crystal overlayers of CdTe, (Cd,Mn)Te, GaAs and AlAs, a number of polycrystalline films and highly efficient electroluminescent thin-film displays based on ZnS:Mn. It could also offer particular advantages for the preparation of ultrathin films of precisely controlled thickness in the nanometer range and thus may have a special value for growing low-dimensional structures.

  10. Counting graphene layers with very slow electrons

    Czech Academy of Sciences Publication Activity Database

    Frank, Luděk; Mikmeková, Eliška; Müllerová, Ilona; Lejeune, M.

    2015-01-01

    Roč. 106, 09 JAN (2015), 013117:1-5. ISSN 0003-6951 R&D Projects: GA TA ČR(CZ) TE01020118; GA MŠk(CZ) LO1212 Institutional support: RVO:68081731 Keywords : graphene * ultralow energy STEM * counting graphene layers * clean ing of graphene * 2D crystals Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 3.302, year: 2014

  11. Recognizing nitrogen dopant atoms in graphene using atomic force microscopy

    Science.gov (United States)

    van der Heijden, Nadine J.; Smith, Daniël; Calogero, Gaetano; Koster, Rik S.; Vanmaekelbergh, Daniel; van Huis, Marijn A.; Swart, Ingmar

    2016-06-01

    Doping graphene by heteroatoms such as nitrogen presents an attractive route to control the position of the Fermi level in the material. We prepared N-doped graphene on Cu(111) and Ir(111) surfaces via chemical vapor deposition of two different molecules. Using scanning tunneling microscopy images as a benchmark, we show that the position of the dopant atoms can be determined using atomic force microscopy. Specifically, the frequency shift-distance curves Δ f (z ) acquired above a N atom are significantly different from the curves measured over a C atom. Similar behavior was found for N-doped graphene on Cu(111) and Ir(111). The results are corroborated by density functional theory calculations employing a van der Waals functional.

  12. Highly Stable Surface-Enhanced Raman Spectroscopy Substrates Using Few-Layer Graphene on Silver Nanoparticles

    OpenAIRE

    Jaehong Lee; Sera Shin; Subin Kang; Sanggeun Lee; Jungmok Seo; Taeyoon Lee

    2015-01-01

    Graphene can be effectively applied as an ultrathin barrier for fluids, gases, and atoms based on its excellent impermeability. In this work, few-layer graphene was encapsulated on silver (Ag) nanoparticles for the fabrication of highly stable surface-enhanced Raman scattering (SERS) substrates, which has strong resistance to oxidation of the Ag nanoparticles. The few-layer graphene can be successfully grown on the surface of the Ag nanoparticles through a simple heating process. To prevent t...

  13. Atomically thin epitaxial template for organic crystal growth using graphene with controlled surface wettability.

    Science.gov (United States)

    Nguyen, Nguyen Ngan; Jo, Sae Byeok; Lee, Seong Kyu; Sin, Dong Hun; Kang, Boseok; Kim, Hyun Ho; Lee, Hansol; Cho, Kilwon

    2015-04-01

    A two-dimensional epitaxial growth template for organic semiconductors was developed using a new method for transferring clean graphene sheets onto a substrate with controlled surface wettability. The introduction of a sacrificial graphene layer between a patterned polymeric supporting layer and a monolayer graphene sheet enabled the crack-free and residue-free transfer of free-standing monolayer graphene onto arbitrary substrates. The clean graphene template clearly induced the quasi-epitaxial growth of crystalline organic semiconductors with lying-down molecular orientation while maintaining the "wetting transparency", which allowed the transmission of the interaction between organic molecules and the underlying substrate. Consequently, the growth mode and corresponding morphology of the organic semiconductors on graphene templates exhibited distinctive dependence on the substrate hydrophobicity with clear transition from lateral to vertical growth mode on hydrophilic substrates, which originated from the high surface energy of the exposed crystallographic planes of the organic semiconductors on graphene. The optical properties of the pentacene layer, especially the diffusion of the exciton, also showed a strong dependency on the corresponding morphological evolution. Furthermore, the effect of pentacene-substrate interaction was systematically investigated by gradually increasing the number of graphene layers. These results suggested that the combination of a clean graphene surface and a suitable underlying substrate could serve as an atomically thin growth template to engineer the interaction between organic molecules and aromatic graphene network, thereby paving the way for effectively and conveniently tuning the semiconductor layer morphologies in devices prepared using graphene. PMID:25798655

  14. Selective growth of Pb islands on graphene/SiC buffer layers

    International Nuclear Information System (INIS)

    Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6√(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Since Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode

  15. The Electronic Structure of Single-Layer Graphene

    Science.gov (United States)

    Siegel, David Alan

    Single-layer graphene has been widely researched in recent years due to its perceived technological applicability and its scientific importance as a unique model system with relativistic Dirac Fermions. Because of its unique geometric and electronic structure, the properties of graphene can be tuned or manipulated in several ways. This tunability is important for technological applications in its own right, and it also allows us to study the fundamental properties of Dirac Fermions, including unique many-body interactions and the nature of the quasiparticles at half-filling. This thesis is a detailed examination of the electronic and structural properties of graphene, studied with angle-resolved photoemission spectroscopy (ARPES) and other surface science techniques like low-energy electron microscopy and diffraction. This thesis is organized as follows. Chapter 1 gives an introduction to the electronic and structural properties of single-layer graphene. It provides a brief historical overview of major theoretical and experimental milestones and sets the stage for the important theoretical and experimental questions that this thesis addresses. Chapters 2 and 3 describe the experimental setup. Chapter 2 discusses the experimental techniques used in this thesis with particular focus on the mechanics of ARPES. Chapter 3 discusses the different graphene growth techniques that were used to create our sample with particular focus on our characterization of epitaxial graphene on SiC(0001). Chapters 4 and 5 form the meat of this thesis: they provide a thorough discussion of the electronic properties of graphene as studied by ARPES. Chapter 4 describes how various perturbations can result in the manipulation of the bare electronic band structure, including the deposition of atomic or molecular species on top of an epitaxial graphene sheet as well as the interactions between graphene and its substrate. Chapter 5 describes the many-body physics in single-layer graphene. It

  16. Atomic resolution of nitrogen-doped graphene on Cu foils

    Science.gov (United States)

    Wang, Chundong; Schouteden, Koen; Wu, Qi-Hui; Li, Zhe; Jiang, Jianjun; Van Haesendonck, Chris

    2016-09-01

    Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene’s electronic properties.

  17. Layered graphene structure of a hexagonal carbon

    International Nuclear Information System (INIS)

    Experiments show that there is a novel hexagonal carbon polymorph restricted to the space group of P-62c, but the detailed atomic structure is not determined. Here we set carbon atoms occupying P-62c 4f or P-62c 2c and 2d Wyckoff positions, and calculate the total energy of the different cell structures changing the internal parameter by first-principles calculations, which demonstrates that the stable structures in energy (at local minima) are hexagonal carbon (P-62c 2c and 2d) and hexagonal diamond (P-62c 4f, z=1/16). The calculated bulk modulus 437±16 GPa and interlayer distance 2.062 Å of the layered graphene structure P-62c 2c and 2d are in good agreement with those of the proposed new carbon, which indicates that P-62c 2c and 2d is a possible precursor or intermediate hard phase during the structural transformation of carbon

  18. Rapid growth of single-layer graphene on the insulating substrates by thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.Y. [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China); Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Dai, D.; Chen, G.X.; Yu, J.H. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Nishimura, K. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Advanced Nano-processing Engineering Lab, Mechanical Systems Engineering, Kogakuin University (Japan); Lin, C.-T. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Jiang, N., E-mail: jiangnan@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhan, Z.L., E-mail: zl_zhan@sohu.com [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2015-08-15

    Highlights: • A rapid thermal CVD process has been developed to directly grow graphene on the insulating substrates. • The treating time consumed is ≈25% compared to conventional CVD procedure. • Single-layer and few-layer graphene can be formed on quartz and SiO{sub 2}/Si substrates, respectively. • The formation of thinner graphene at the interface is due to the fast precipitation rate of carbon atoms during cooling. - Abstract: The advance of CVD technique to directly grow graphene on the insulating substrates is particularly significant for further device fabrication. As graphene is catalytically grown on metal foils, the degradation of the sample properties is unavoidable during transfer of graphene on the dielectric layer. Moreover, shortening the treatment time as possible, while achieving single-layer growth of graphene, is worthy to be investigated for promoting the efficiency of mass production. Here we performed a rapid heating/cooling process to grow graphene films directly on the insulating substrates by thermal CVD. The treating time consumed is ≈25% compared to conventional CVD procedure. In addition, we found that high-quality, single-layer graphene can be formed on quartz, but on SiO{sub 2}/Si substrate only few-layer graphene can be obtained. The pronounced substrate effect is attributed to the different dewetting behavior of Ni films on the both substrates at 950 °C.

  19. Hole-doping of mechanically exfoliated graphene by confined hydration layers

    NARCIS (Netherlands)

    Bollmann, T.R.J.; Antipina, L.Y.; Temmen, M.; Reichling, M.; Sorokin, P.B.

    2015-01-01

    By the use of non-contact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy (KPFM), we measure the local surface potential of mechanically exfoliated graphene on the prototypical insulating hydrophilic substrate of CaF2(111). Hydration layers confined between the graphene and the Ca

  20. Layer-by-Layer Self-Assembled Graphene Multilayer Films via Covalent Bonds for Supercapacitor Electrodes

    Directory of Open Access Journals (Sweden)

    Xianbin Liu

    2015-05-01

    Full Text Available To maximize the utilization of its single-atom thin nature, a facile scheme to fabricate graphene multilayer films via a layer-by-layer self-assembled process was presented. The structure of multilayer films was constructed by covalently bonding graphene oxide (GO using p-phenylenediamine (PPD as a covalent cross-linking agent. The assembly process was confirmed to be repeatable and the structure was stable. With the π-π conjugated structure and a large number of spaces in the framework, the graphene multi‐ layer films exhibited excellent electrochemical perform‐ ance. The uniform ultrathin electrode exhibited a capacitance of 41.71 μF/cm2 at a discharge current of 0.1 μA/cm2, and displayed excellent stability of 88.9 % after 1000 charge-discharge cycles.

  1. Fabrication and Characterization of Macroscopic Graphene Layers on Metallic Substrates

    OpenAIRE

    Freire Soler, Víctor Manuel

    2014-01-01

    In 2004 there were newly conditions for a scientific revolution, with very important technology implications and yet to be completely developed. It is the isolation of atomic carbon layers, better known as graphene, whose extreme mechanical and electronic properties stand out above all known materials: it presents the highest electron mobility, ambipolarity, it supports large current densities, the highest elastic modulus, increased thermal conductivity, it shows high impermeability, and reco...

  2. Electrochemical preparation of few layer-graphene nanosheets via reduction of oriented exfoliated graphene oxide thin films in acetamide-urea-ammonium nitrate melt under ambient conditions

    International Nuclear Information System (INIS)

    Electrochemical reduction of exfoliated graphene oxide, prepared from pre-exfoliated graphite, in acetamide-urea-ammonium nitrate ternary eutectic melt results in few layer-graphene thin films. Negatively charged exfoliated graphene oxide is attached to positively charged cystamine monolyer self-assembled on a gold surface. Electrochemical reduction of the oriented graphene oxide film is carried out in a room temperature, ternary molten electrolyte. The reduced film is characterized by atomic force microscopy (AFM), conductive AFM, Fourier-transform infrared spectroscopy and Raman spectroscopy. Ternary eutectic melt is found to be a suitable medium for the regulated reduction of graphene oxide to reduced graphene oxide-based sheets on conducting surfaces.

  3. Periodic arrays of intercalated atoms in twisted bilayer graphene: An ab initio investigation

    Science.gov (United States)

    Miwa, R. H.; Venezuela, P.; Morell, Eric Suárez

    2015-09-01

    We have performed an ab initio investigation of transition metals (TMs =Mo ,Ru ,Co ,andPt ) embedded in twisted bilayer graphene (tBG) layers. Our total energy results reveal that, triggered by the misalignment between the graphene layers, Mo and Ru atoms may form a quasiperiodic (triangular) array of intercalated atoms. In contrast, the formation of those structures is not expected for the other TMs, the Co and Pt atoms. The net magnetic moment (m ) of Mo and Ru atoms may be quenched upon intercalation, depending on the stacking region (AA or AB). For instance, we find a magnetic moment of 0.3 μB(1.8 μB) for Ru atoms intercalated between the AA (AB) regions of the stacked twisted layers. Through simulated scanning tunneling microscopy (STM) images, we verify that the presence of intercalated TMs can be identified by the formation of bright (hexagonal) spots lying on the graphene surface.

  4. Hole-doping of mechanically exfoliated graphene by confined hydration layers

    Institute of Scientific and Technical Information of China (English)

    Tjeerd R. J. Bollmann[1,2; Liubov Yu. Antipina[3,4; Matthias Temmen[2; Michael Reichling[2; Pavel B. Sorokin[5

    2015-01-01

    By the use of non-contact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy (KPFM), we measure the local surface potential of mechanically exfoliated graphene on the prototypical insulating hydrophilic substrate of CAF2(111). Hydration layers confined between the graphene and the CaF2 substrate, resulting from the graphene's preparation under ambient conditions on the hydrophilic substrate surface, are found to electronically modify the graphene as the material's electron density transfers from graphene to the hydration layer. Density functional theory (DFT) calculations predict that the first 2 to 3 water layers adjacent to the graphene hole-dope the graphene by several percent of a unit charge per unit cell.

  5. Enhanced intervalley scattering in artificially stacked double-layer graphene

    International Nuclear Information System (INIS)

    We fabricated artificially stacked double-layer graphene by sequentially transferring graphene grown by chemical vapor deposition. The double-layer graphene was characterized by Raman spectroscopy and transport measurements. A weak localization effect was observed for different charge carrier densities and temperatures. The obtained intervalley scattering rate was unusually high compared to normal Bernal-stacked bilayer or single-layer graphene. The sharp point defects, local deformation, or bending of graphene plane required for intervalley scattering from one Dirac cone to another seemed to be enhanced by the artificially stacked graphene layers. (paper)

  6. Graphene Oxide as a Monoatomic Blocking Layer

    DEFF Research Database (Denmark)

    Petersen, Søren; Glyvradal, Magni; Bøggild, Peter;

    2012-01-01

    Monolayer graphene oxide (mGO) is shown to effectively protect molecular thin films from reorganization and function as an atomically thin barrier for vapor-deposited Ti/Al metal top electrodes. Fragile organic Langmuir–Blodgett (LB) films of C22 fatty acid cadmium salts (cadmium(II) behenate) were...

  7. Determination of the stacking order of curved few-layered graphene systems

    Science.gov (United States)

    Hayashi, Takuya; MuramatsuCurrent Affiliation: Department Of Materials Science; Technology, Nagaoka University Of Technology, 1603-1, Kamitomioka, Nagaoka, 940-2188, Japan, Hiroyuki; ShimamotoCurrent Affiliation: Advanced Manufacturing Research Institute, Aist, 2266-98 Anagahora, Shimoshidami, Moriyama-Ku, Nagoya 463-8560, Japan, Daisuke; Fujisawa, Kazunori; Tojo, Tomohiro; Muramoto, Yoshitaka; Yokomae, Takuya; Asaoka, Toru; Kim, Yoong Ahm; Terrones, Mauricio; Endo, Morinobu

    2012-09-01

    We report a facile method to efficiently visualize the atomic carbon network of curved few-layered graphitic systems including folded bi-layer graphene, nanoribbon edges and multi-walled carbon nanotubes (straight and bent), via the processing of aberration-corrected high-resolution transmission electron microscopy (AC-HRTEM) images. This technique is also able to atomically resolve the structure of overlapping graphene layers with different orientations, thus enabling us to determine the stacking order of multiple graphene layers. To the best of our knowledge, we are the first to identify the stacking order of a misoriented 4-layer closed-edge graphene and a metal-semiconductor double-walled carbon nanotube junction.

  8. Doping monolayer graphene with single atom substitutions

    KAUST Repository

    Wang, Hongtao

    2012-01-11

    Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.

  9. Bosonization approach for "atomic collapse" in graphene

    CERN Document Server

    Kagimura, Aya

    2015-01-01

    We study quantum electrodynamics with 2+1 dimensional massless Dirac fermion around a Coulomb impurity. Around a large charge with atomic number Z > 137, the QED vacuum is expected to collapse due to the strong Coulombic force. While the relativistic quantum mechanics fails to make reliable predictions for the fate of the vacuum, the heavy ion collision experiment also does not give clear understanding of this system. Recently,the "atomic collapse" resonances were observed on graphene where an artificial nuclei can be made. In this paper, we present our non-perturbative study of the vacuum strucuture of the quasiparticles in graphene with a charge impurity which contains multi-body effect using bosonization method.

  10. Electron properties of fluorinated single-layer graphene transistors

    OpenAIRE

    Withers, Freddie; Dubois, Marc; Savchenko, Alexander K.

    2010-01-01

    We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localised electron states.

  11. Raman Fingerprints of Atomically Precise Graphene Nanoribbons

    Science.gov (United States)

    Verzhbitskiy, Ivan A.; Corato, Marzio De; Ruini, Alice; Molinari, Elisa; Narita, Akimitsu; Hu, Yunbin; Schwab, Matthias G.; Bruna, Matteo; Yoon, Duhee; Milana, Silvia; Feng, Xinliang; Müllen, Klaus; Ferrari, Andrea C.; Casiraghi, Cinzia; Prezzi, Deborah

    2016-06-01

    Bottom-up approaches allow the production of ultra-narrow and atomically precise graphene nanoribbons (GNRs), with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab-initio simulations, we show that GNR width, edge geometry and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm-1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs, and differentiates them from other sp2 carbon nanostructures.

  12. Atomic Collapse in Graphene: Lost of Unitarity

    CERN Document Server

    Valenzuela, David; Loewe, Marcelo; Raya, Alfredo

    2016-01-01

    We explore the problem of atomic collapse in graphene by monopole impurities, both electric and magnetic, within the context of supersymmetric quantum mechanics. For electric impurities, upon factorizing the radial Dirac Hamiltonian and identifying the supercharges, existence of a critical charge that makes the ground state {\\em fall-into-the-center} translates into lost of unitarity for the corresponding Hamiltonian. For the problem of magnetic monopole impurities, preservation of unitarity for all values of the parameters of the corresponding potential translates into the absence of atomic collapse in this case.

  13. Raman Fingerprints of Atomically Precise Graphene Nanoribbons

    Science.gov (United States)

    2016-01-01

    Bottom-up approaches allow the production of ultranarrow and atomically precise graphene nanoribbons (GNRs) with electronic and optical properties controlled by the specific atomic structure. Combining Raman spectroscopy and ab initio simulations, we show that GNR width, edge geometry, and functional groups all influence their Raman spectra. The low-energy spectral region below 1000 cm–1 is particularly sensitive to edge morphology and functionalization, while the D peak dispersion can be used to uniquely fingerprint the presence of GNRs and differentiates them from other sp2 carbon nanostructures. PMID:26907096

  14. Layer resolved capacitive probing of graphene bilayers

    Science.gov (United States)

    Zibrov, Alexander; Parmentier, François; Li, Jia; Wang, Lei; Hunt, Benjamin; Dean, Cory; Hone, James; Taniguchi, Takashi; Watanabe, Kenji; Young, Andrea

    Compared to single layer graphene, graphene bilayers have an additional ``which-layer'' degree of freedom that can be controlled by an external electric field in a dual-gated device geometry. We describe capacitance measurements capable of directly probing this degree of freedom. By performing top gate, bottom gate, and penetration field capacitance measurements, we directly extract layer polarization of both Bernal and twisted bilayers. We will present measurements of hBN encapsulated bilayers at both zero and high magnetic field, focusing on the physics of the highly degenerate zero-energy Landau level in the high magnetic field limit where spin, valley, and layer degeneracy are all lifted by electronic interactions.

  15. Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures

    International Nuclear Information System (INIS)

    Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H2O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics. (paper)

  16. Spectroscopic characterization of ion-irradiated multi-layer graphenes

    Energy Technology Data Exchange (ETDEWEB)

    Tsukagoshi, Akira [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Honda, Shin-ichi, E-mail: s-honda@eng.u-hyogo.ac.jp [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Osugi, Ryo [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Okada, Hiraku [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Niibe, Masahito [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); Terasawa, Mititaka [Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205 (Japan); RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan); Hirase, Ryuji; Izumi, Hirokazu; Yoshioka, Hideki [Hyogo Prefectural Institute of Technology, Kobe 654-0037 (Japan); Niwase, Keisuke [Hyogo University of Teacher Education, Kato, Hyogo 673-1494 (Japan); Taguchi, Eiji [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka 567-0047 (Japan); Lee, Kuei-Yi [Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Oura, Masaki [RIKEN SPring-8 Center, Sayo, Hyogo 679-5148 (Japan)

    2013-11-15

    Low-energy Ar ions (0.5–2 keV) were irradiated to multi-layer graphenes and the damage process, the local electronic states, and the degree of alignment of the basal plane, and the oxidation process upon ion irradiation were investigated by Raman spectroscopy, soft X-ray absorption spectroscopy (XAS) and in situ X-ray photoelectron spectroscopy (XPS). By Raman spectroscopy, we observed two stages similar to the case of irradiated graphite, which should relate to the accumulations of vacancies and turbulence of the basal plane, respectively. XAS analysis indicated that the number of sp{sup 2}-hybridized carbon (sp{sup 2}-C) atoms decreased after ion irradiation. Angle-resolved XAS revealed that the orientation parameter (OP) decreased with increasing ion energy and fluence, reflecting the turbulence of the basal plane under irradiation. In situ XPS shows the oxidation of the irradiated multi-layer graphenes after air exposure.

  17. Strong covalent bonding between two graphene layers

    OpenAIRE

    Andres, P. L. de; Ramírez, Rafael; Vergés, José A.

    2008-01-01

    We show that two graphene layers stacked directly on top of each other (AA stacking) form strong chemical bonds when the distance between planes is 0.156 nm. Simultaneously, C-C in-plane bonds are considerably weakened from partial double-bond (0.141 nm) to single bond (0.154 nm). This polymorphic form of graphene bilayer is meta-stable w.r.t. the one bound by van der Waals forces at a larger separation (0.335 nm) with an activation energy of 0.16 eV/cell. Similarly to the structure found in ...

  18. Damage effects on multi-layer graphene from femtosecond laser interaction

    International Nuclear Information System (INIS)

    We present a study on the damage effects of femtosecond laser interaction on exfoliated multi-layer graphene using the techniques of optical microscopy, atomic force microscopy, and Raman spectroscopy. Various effects of the interaction were observed. The ablation threshold was found to be ∼4 mJ cm−2, and was slightly higher in transmission mode than in reflection mode. This work also demonstrates the feasibility of ultrafast laser patterning of exfoliated multi-layer graphene. (paper)

  19. Graphene coated with controllable N-doped carbon layer by molecular layer deposition as electrode materials for supercapacitors

    Science.gov (United States)

    Chen, Yao; Gao, Zhe; Zhang, Bin; Zhao, Shichao; Qin, Yong

    2016-05-01

    In this work, graphene is coated with nitrogen-doped carbon layer, which is produced by a carbonization process of aromatic polyimide (PI) films deposited on the surfaces of graphene by molecular layer deposition (MLD). The utilization of MLD not only allows uniform coating of PI layers on the surfaces of pristine graphene without any surface treatment, but also enables homogenous dispersion of doped nitrogen atoms in the carbonized products. The as-prepared N-doped carbon layer coated graphene (NC-G) exhibited remarkable capacitance performance as electrode materials for supercapacitor, showing a high specific capacitance of 290.2 F g-1 at current density of 1 A g-1 in 6 M KOH aqueous electrolyte, meanwhile maintaining good rate performance and stable cycle capability. The NC-G synthesized by this way represents an alternative promising candidate as electrode material for supercapacitors.

  20. Electron diffraction studies on CVD grown bi-layered graphene

    Science.gov (United States)

    Lingam, Kiran; Karakaya, Mehmet; Podila, Ramakrishna; Quin, Haijun; Rao, Apparao; Dept. of Physics and Astronomy, Clemson University, Clemson, SC USA 29634. Team; Advanced Materials Research Laboratories, Clemson University, Anderson, SC USA 29625 Collaboration

    2013-03-01

    Graphene has generated enormous interest in the scientific community due to its peculiar properties like electron mobility, thermal conductivity etc. Several recent reports on exfoliated graphene emphasized the role of layer stacking on the electronic and optical properties of graphene in case of bi-layered and few layered graphene and several synthesis techniques like chemical vapor deposition (CVD) on Copper foils are employed to prepare graphene for applications at a large scale. However, a correlated study pertinent to the stacking order in CVD grown graphene is still unclear. In this work, using a combination of Raman spectroscopy and selected area electron diffraction analysis we analyzed the preferred misorientation angles in a CVD grown bi-layered graphene and also the role of Cu crystal facets on the graphene stacking order will be presented.

  1. Electronic properties of incommensurate atomic layers

    International Nuclear Information System (INIS)

    We present a brief theoretical overview of electronic properties of incommensurate multilayer systems, i.e., a pair of two-dimensional atomic layers stacked in an arbitrary orientation. We introduce the general theoretical scheme to describe the interlayer interaction between incommensurate crystal structures, and apply the formula to two specific examples, the twisted bilayer graphene and graphene–hBN composite bilayer. In each case, we calculate the electronic band structure and demonstrate that the low-energy electronic properties are significantly modified by the interlayer interaction, particularly when the two lattice structures are close to each other. We also study the energy spectrum and the quantum Hall effect in magnetic fields, where we see that the spectral structure exhibits a fractal nature, as known as the Hofstadter butterfly. We argue about the optical absorption properties of the twisted bilayer graphene and show that the interlayer interaction gives rise to the characteristic spectroscopic features in zero magnetic field and also in strong magnetic field. (author)

  2. Aqueous proton transfer across single-layer graphene

    Science.gov (United States)

    Achtyl, Jennifer L.; Unocic, Raymond R.; Xu, Lijun; Cai, Yu; Raju, Muralikrishna; Zhang, Weiwei; Sacci, Robert L.; Vlassiouk, Ivan V.; Fulvio, Pasquale F.; Ganesh, Panchapakesan; Wesolowski, David J.; Dai, Sheng; van Duin, Adri C. T.; Neurock, Matthew; Geiger, Franz M.

    2015-03-01

    Proton transfer across single-layer graphene proceeds with large computed energy barriers and is therefore thought to be unfavourable at room temperature unless nanoscale holes or dopants are introduced, or a potential bias is applied. Here we subject single-layer graphene supported on fused silica to cycles of high and low pH, and show that protons transfer reversibly from the aqueous phase through the graphene to the other side where they undergo acid-base chemistry with the silica hydroxyl groups. After ruling out diffusion through macroscopic pinholes, the protons are found to transfer through rare, naturally occurring atomic defects. Computer simulations reveal low energy barriers of 0.61-0.75 eV for aqueous proton transfer across hydroxyl-terminated atomic defects that participate in a Grotthuss-type relay, while pyrylium-like ether terminations shut down proton exchange. Unfavourable energy barriers to helium and hydrogen transfer indicate the process is selective for aqueous protons.

  3. Graphene growth at the interface between Ni catalyst layer and SiO2/Si substrate.

    Science.gov (United States)

    Lee, Jeong-Hoon; Song, Kwan-Woo; Park, Min-Ho; Kim, Hyung-Kyu; Yang, Cheol-Woong

    2011-07-01

    Graphene was synthesized deliberately at the interface between Ni film and SiO2/Si substrate as well as on top surface of Ni film using chemical vapor deposition (CVD) which is suitable for large-scale and low-cost synthesis of graphene. The carbon atom injected at the top surface of Ni film can penetrate and reach to the Ni/SiO2 interface for the formation of graphene. Once we have the graphene in between Ni film and SiO2/Si substrate, the substrate spontaneously provides insulating SiO2 layer and we may easily get graphene/SiO2/Si structure simply by discarding Ni film. This growth of graphene at the interface can exclude graphene transfer step for electronic application. Raman spectroscopy and optical microscopy show that graphene was successfully synthesized at the back of Ni film and the coverage of graphene varies with temperature and time of synthesis. The coverage of graphene at the interface depends on the amount of carbon atoms diffused into the back of Ni film. PMID:22121737

  4. The atomic configuration of graphene/vanadium carbide interfaces in vanadium carbide-encapsulating carbon nanocapsules.

    Science.gov (United States)

    Yazaki, Gaku; Matsuura, Daisuke; Kizuka, Tokushi

    2014-03-01

    Carbon nanocapsules (CNCs) encapsulating vanadium carbide (VC) nanocrystals with a NaCI structure were synthesized by a gas-evaporation method using arc-discharge heating. The CNCs were observed by high-resolution transmission electron microscopy. The VC nanocrystals within the nanospaces of CNCs were truncated by low-index facets and were coated with several graphene layers, forming graphene/VC interfaces. The atomic configuration and interlayer spacings at the interfaces were found. PMID:24745251

  5. Improving the electrical properties of graphene layers by chemical doping

    Science.gov (United States)

    Farooq Khan, Muhammad; Zahir Iqbal, Muhammad; Waqas Iqbal, Muhammad; Eom, Jonghwa

    2014-10-01

    Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO3) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO3. The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics.

  6. Improving the electrical properties of graphene layers by chemical doping

    International Nuclear Information System (INIS)

    Although the electronic properties of graphene layers can be modulated by various doping techniques, most of doping methods cost degradation of structural uniqueness or electrical mobility. It is matter of huge concern to develop a technique to improve the electrical properties of graphene while sustaining its superior properties. Here, we report the modification of electrical properties of single- bi- and trilayer graphene by chemical reaction with potassium nitrate (KNO3) solution. Raman spectroscopy and electrical transport measurements showed the n-doping effect of graphene by KNO3. The effect was most dominant in single layer graphene, and the mobility of single layer graphene was improved by the factor of more than 3. The chemical doping by using KNO3 provides a facile approach to improve the electrical properties of graphene layers sustaining their unique characteristics. (paper)

  7. Growth of bi- and tri-layered graphene on silicon carbide substrate via molecular dynamics simulation

    Energy Technology Data Exchange (ETDEWEB)

    Min, Tjun Kit; Yoon, Tiem Leong [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lim, Thong Leng [Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia)

    2015-04-24

    Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works.

  8. Growth of bi- and tri-layered graphene on silicon carbide substrate via molecular dynamics simulation

    International Nuclear Information System (INIS)

    Molecular dynamics (MD) simulation with simulated annealing method is used to study the growth process of bi- and tri-layered graphene on a 6H-SiC (0001) substrate via molecular dynamics simulation. Tersoff-Albe-Erhart (TEA) potential is used to describe the inter-atomic interactions among the atoms in the system. The formation temperature, averaged carbon-carbon bond length, pair correlation function, binding energy and the distance between the graphene formed and the SiC substrate are quantified. The growth mechanism, graphitization of graphene on the SiC substrate and characteristics of the surface morphology of the graphene sheet obtained in our MD simulation compare well to that observed in epitaxially grown graphene experiments and other simulation works

  9. Highly Stable Surface-Enhanced Raman Spectroscopy Substrates Using Few-Layer Graphene on Silver Nanoparticles

    Directory of Open Access Journals (Sweden)

    Jaehong Lee

    2015-01-01

    Full Text Available Graphene can be effectively applied as an ultrathin barrier for fluids, gases, and atoms based on its excellent impermeability. In this work, few-layer graphene was encapsulated on silver (Ag nanoparticles for the fabrication of highly stable surface-enhanced Raman scattering (SERS substrates, which has strong resistance to oxidation of the Ag nanoparticles. The few-layer graphene can be successfully grown on the surface of the Ag nanoparticles through a simple heating process. To prevent the agglomeration of the Ag nanoparticles in the fabrication process, poly(methyl methacrylate (PMMA layers were used as a solid carbon source instead of methane (CH4 gas generally used as a carbon source for the synthesis of graphene. X-ray diffraction (XRD spectra of the few-layer graphene-encapsulated Ag nanoparticles indicate that the few-layer graphene can protect the Ag nanoparticles from surface oxidation after intensive annealing processes in ambient conditions, giving the highly stable SERS substrates. The Raman spectra of Rhodamine 6G (R6G deposited on the stable SERS substrates exhibit maintenance of the Raman signal intensity despite the annealing process in air. The facile approach to fabricate the few-layer graphene-encapsulated Ag nanoparticles can be effectively useful for various applications in chemical and biological sensors by providing the highly stable SERS substrates.

  10. Layer compression and enhanced optical properties of few-layer graphene nanosheets induced by ion irradiation

    CERN Document Server

    Tan, Yang; Akhmadaliev, Shavkat; Zhou, Shengqiang; Chen, Feng

    2016-01-01

    Graphene has been recognized as an attractive two-dimensional material for fundamental research and wide applications in electronic and photonic devices owing to its unique properties. The technologies to modulate the properties of graphene are of continuous interest to researchers in multidisciplinary areas. Herein, we report on the first experimental observation of the layer-to-layer compression and enhanced optical properties of few-layer graphene nanosheets by applying the irradiation of energetic ion beams. After the irradiation, the space between the graphene layers was reduced, resulting in a tighter contact between the few-layer graphene nanosheet and the surface of the substrate. This processing also enhanced the interaction between the graphene nanosheets and the evanescent-field wave near the surface, thus reinforcing the polarization-dependent light absorption of the graphene layers (with 3-fold polarization extinction ratio increment). Utilizing the ion-irradiated graphene nanosheets as saturable...

  11. Water desalination using nanoporous single-layer graphene

    Science.gov (United States)

    Surwade, Sumedh P.; Smirnov, Sergei N.; Vlassiouk, Ivan V.; Unocic, Raymond R.; Veith, Gabriel M.; Dai, Sheng; Mahurin, Shannon M.

    2015-05-01

    By creating nanoscale pores in a layer of graphene, it could be used as an effective separation membrane due to its chemical and mechanical stability, its flexibility and, most importantly, its one-atom thickness. Theoretical studies have indicated that the performance of such membranes should be superior to state-of-the-art polymer-based filtration membranes, and experimental studies have recently begun to explore their potential. Here, we show that single-layer porous graphene can be used as a desalination membrane. Nanometre-sized pores are created in a graphene monolayer using an oxygen plasma etching process, which allows the size of the pores to be tuned. The resulting membranes exhibit a salt rejection rate of nearly 100% and rapid water transport. In particular, water fluxes of up to 106 g m-2 s-1 at 40 °C were measured using pressure difference as a driving force, while water fluxes measured using osmotic pressure as a driving force did not exceed 70 g m-2 s-1 atm-1.

  12. Electronic spin transport in bilayer and single layer graphene

    OpenAIRE

    Yang, Tsung-Yeh

    2011-01-01

    Graphene has drawn plenty of attention since its discovery in 2004. Due to its excellent properties, such as long spin relaxation length and gate-tunable spin transport, graphene is expected to be a potential candidate for spintronics applications. In this thesis, the systematic study of the spin relaxation mechanisms in bilayer and single layer graphene is presented. Graphene-based spin valve devices in four-terminal non-local geometry are fabricated for the investigation of the charge and s...

  13. Optical reflection and transmission properties of exfoliated graphite from a graphene monolayer to several hundred graphene layers

    International Nuclear Information System (INIS)

    The optical reflection contrast and optical transmission contrast of graphitic films on glass ranging in thickness from a monolayer to the limit of bulk graphite have been experimentally measured. For samples with more than 10 graphene layers where optical contrast quantization becomes difficult to observe, atomic force microscopy was used to measure the sample thickness. The visible optical reflection and transmission of thin graphitic films is found to depend strongly on the real component of the optical conductance per graphene layer, and comparatively weakly on the imaginary component of optical conductance. This observation in part explains the significant variation in the refractive index of graphene and graphite reported in the literature to date. Spectroscopic measurements reveal a strong dispersion in the optical conductance of even a 10 layer film, consistent with an imaginary conductance arising from virtual transitions at the band edges of the π and σ bands at the M and Γ points, respectively.

  14. Atomic Structures of Graphene, Benzene and Methane with Bond Lengths as Sums of the Single, Double and Resonance Bond Radii of Carbon

    OpenAIRE

    Heyrovska, Raji

    2008-01-01

    Two dimensional layers of graphene are currently drawing a great attention in fundamental and applied nanoscience. Graphene consists of interconnected hexagons of carbon atoms as in graphite. This article presents for the first time the structures of graphene at the atomic level and shows how it differs from that of benzene, due to the difference in the double bond and resonance bond based radii of carbon. The carbon atom of an aliphatic compound such as methane has a longer covalent single b...

  15. Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    S. Karamat; S. Sonuşen; Ü. Çelik; Y. Uysallı; E. Özgönül; A. Oral

    2015-01-01

    The present competition of graphene electronics demands an efficient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to SiO2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains. The presence of different stacking sequences in the graphene layers influence the electronic and optical properties;in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum (FWHM) value of 30 cm ? 1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm ? 1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm ? 1, respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm ? 1 as compare to single layer graphene which showed its

  16. Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

    Directory of Open Access Journals (Sweden)

    S. Karamat

    2015-08-01

    Full Text Available The present competition of graphene electronics demands an efficient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to SiO2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains. The presence of different stacking sequences in the graphene layers influence the electronic and optical properties; in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum (FWHM value of 30 cm−1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm−1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm−1, respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm−1 as compare to single layer graphene

  17. Single 3d transition metal atoms on multi-layer graphene systems: electronic configurations, bonding mechanisms and role of the substrate

    Czech Academy of Sciences Publication Activity Database

    Sessi, V.; Stepanow, S.; Rudenko, A.N.; Krotzky, S.; Kern, K.; Hiebel, F.; Mallet, P.; Veuillen, J.-Y.; Šipr, Ondřej; Honolka, Jan; Brookes, N.B.

    2014-01-01

    Roč. 16, Jun (2014), 1-11. ISSN 1367-2630 R&D Projects: GA ČR(CZ) GAP108/11/0853 Institutional support: RVO:68378271 Keywords : graphene * magnetic adsorbates * x-ray absorption spectroscopy * surface magnetism Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.558, year: 2014

  18. Electronic Band Engineering of Epitaxial Graphene by Atomic Intercalation

    Science.gov (United States)

    Jayasekera, Thushari; Sandin, Andreas; Xu, Shu; Wheeler, Virginia; Gaskill, D. K.; Rowe, J. E.; Kim, K. W.; Dougherty, Daniel B.; Buongiorno Nardelli, M.

    2012-02-01

    Using calculations from first principles, we have investigated possible ways of engineering the electronic band structure of epitaxial graphene on SiC. In particular, intercalation of different atomic species, such as Hydrogen, Fluorine, Sodium, Germanium, Carbon and Silicon is shown to modify and tune the interface electronic properties and band alignments. Our results suggest that intercalation in graphene is quite different from that in graphite, and could provide a fundamentally new way to achieve electronic control in graphene electronics.

  19. Chemical reaction between single hydrogen atom and graphene

    International Nuclear Information System (INIS)

    We study chemical reaction between a single hydrogen atom and a graphene, which is the elemental reaction between hydrogen and graphitic carbon materials. In the present work, classical molecular dynamics simulation is used with modified Brenner's empirical bond order potential. The three reactions, that is, absorption reaction, reflection reaction and penetration reaction, are observed in our simulation. Reaction rates depend on the incident energy of the hydrogen atom and the graphene temperature. The dependence can be explained by the following mechanisms: (1) The hydrogen atom receives repulsive force by π-electrons in addition to nuclear repulsion. (2) Absorbing the hydrogen atom, the graphene transforms its structure to the 'overhand' configuration such as sp3 state. (3) The hexagonal hole of the graphene is expanded during the penetration of the hydrogen atom. (author)

  20. Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

    OpenAIRE

    Andrea Candini; Nils Richter; Domenica Convertino; Camilla Coletti; Franck Balestro; Wolfgang Wernsdorfer; Mathias Kläui; Marco Affronte

    2015-01-01

    Graphene-based electrodes are very promising for molecular electronics and spintronics. Here we report a systematic characterization of the electroburning (EB) process, leading to the formation of nanometer-spaced gaps, on different types of few-layer graphene (namely mechanically exfoliated graphene on SiO2, graphene epitaxially grown on the C-face of SiC and turbostratic graphene discs deposited on SiO2) under air and vacuum conditions. The EB process is found to depend on both the graphene...

  1. Graphene as an anti-permeation and protective layer for indium-free transparent electrodes

    International Nuclear Information System (INIS)

    We show that graphene can be used as a protective layer for transparent electrodes made of materials which would otherwise deteriorate when exposed to the environment. In particular, we investigate aluminum-doped zinc oxides and ultrathin copper films capped with a one-atom graphene layer in damp heat (95% relative humidity and 95 °C) and high temperature (up to 180 °C) conditions. The results clearly indicate that a graphene layer can strongly reduce degradation of the electrodes’ electrical, optical properties and surface morphology, thus preserving the functionality of the transparent electrodes. The proposed technique is particularly suitable for flexible optoelectronic devices thanks to the mechanical strength of graphene when subjected to bending. (paper)

  2. Detection of interlayer interaction in few-layer graphene

    Science.gov (United States)

    Wu, Zefei; Han, Yu; Lin, Jiangxiazi; Zhu, Wei; He, Mingquan; Xu, Shuigang; Chen, Xiaolong; Lu, Huanhuan; Ye, Weiguang; Han, Tianyi; Wu, Yingying; Long, Gen; Shen, Junying; Huang, Rui; Wang, Lin; He, Yuheng; Cai, Yuan; Lortz, Rolf; Su, Dangsheng; Wang, Ning

    2015-08-01

    Bernal-stacked few-layer graphene has been investigated by analyzing its Landau-level spectra through quantum capacitance measurements. We find that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. In trilayer graphene, the interlayer interaction parameters are generally similar to those of graphite. However, in tetralayer graphene, the hopping parameters of the two bulk layers are quite different from those of the two outer layers. This represents direct evidence of the surface relaxation phenomenon. Traditionally, the van der Waals interaction between the carbon layers is thought to be insignificant. However, we suggest that the interlayer interaction is an important factor in explaining the observed results, and the symmetry-breaking effects in graphene sublattice are not negligible.

  3. High carrier mobility in chemically modified graphene on an atomically flat high-resistive substrate

    International Nuclear Information System (INIS)

    Special high-resistive substrates for graphene sheets are suggested with the aim of providing high conductivity and mobility of charge carriers in graphene. The substrates were created from N-methylpyrrolidone-intercalated few-layer graphene (FLG) using anneals given to FLG samples in the temperature range 100–180 °C. Structures containing a highly conductive single-layer graphene on an atomically flat, high-resistive substrate were produced by recovering the top-layer conductivity. The obtained structures have potential in electronic applications due to a high carrier mobility (up to 16 000–42 000 cm2 V−1 s−1) and strong gate-voltage-induced modulation (by 4–5 orders of magnitude) of the current in the top graphene layer. The strong gate-voltage-induced modulation of the current clearly demonstrated that the top layer was chemically modified graphene. The possibility of governing the surface conductivity in the described structures offers a unique tool for two-dimensional nanodesign. (paper)

  4. Critical Dispersion Distance of Silicon Nanoparticles Intercalated between Graphene Layers

    Directory of Open Access Journals (Sweden)

    Shuze Zhu

    2012-01-01

    Full Text Available Nanocomposites of silicon nanoparticles (Si NPs dispersed in between graphene layers emerge as potential anode materials of high-charge capacity for lithium-ion batteries. A key design requirement is to keep Si NPs dispersed without aggregation. Experimental design of the Si NP dispersion in graphene layers has remained largely empirical. Through extensive molecular dynamics simulations, we determine a critical NP dispersion distance as the function of NP size, below which Si NPs in between graphene layers evolve to bundle together. These results offer crucial and quantitative guidance for designing NP-graphene nanocomposite anode materials with high charge capacity.

  5. Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

    Directory of Open Access Journals (Sweden)

    Andrea Candini

    2015-03-01

    Full Text Available Graphene-based electrodes are very promising for molecular electronics and spintronics. Here we report a systematic characterization of the electroburning (EB process, leading to the formation of nanometer-spaced gaps, on different types of few-layer graphene (namely mechanically exfoliated graphene on SiO2, graphene epitaxially grown on the C-face of SiC and turbostratic graphene discs deposited on SiO2 under air and vacuum conditions. The EB process is found to depend on both the graphene type and on the ambient conditions. For the mechanically exfoliated graphene, performing EB under vacuum leads to a higher yield of nanometer-gap formation than working in air. Conversely, for graphene on SiC the EB process is not successful under vacuum. Finally, the EB is possible with turbostratic graphene discs only after the creation of a constriction in the sample using lithographic patterning.

  6. Controllable chemical vapor deposition growth of few layer graphene for electronic devices.

    Science.gov (United States)

    Wei, Dacheng; Wu, Bin; Guo, Yunlong; Yu, Gui; Liu, Yunqi

    2013-01-15

    Because of its atomic thickness, excellent properties, and widespread applications, graphene is regarded as one of the most promising candidate materials for nanoelectronics. The wider use of graphene will require processes that produce this material in a controllable manner. In this Account, we focus on our recent studies of the controllable chemical vapor deposition (CVD) growth of graphene, especially few-layer graphene (FLG), and the applications of this material in electronic devices. CVD provides various means of control over the morphologies of the produced graph ene. We studied several variables that can affect the CVD growth of graphene, including the catalyst, gas flow rate, growth time, and growth temperature and successfully achieved the controlled growth of hexagonal graphene crystals. Moreover, we developed several modified CVD methods for the controlled growth of FLGs. Patterned CVD produced FLGs with desired shapes in required areas. By introducing dopant precursor in the CVD process, we produced substitutionally doped FLGs, avoiding the typically complicated post-treatment processes for graphene doping. We developed a template CVD method to produce FLG ribbons with controllable morphologies on a large scale. An oxidation-activated surface facilitated the CVD growth of polycrystalline graphene without the use of a metal catalyst or a complicated postgrowth transfer process. In devices, CVD offers a controllable means to modulate the electronic properties of the graphene samples and to improve device performance. Using CVD-grown hexagonal graphene crystals as the channel materials in field-effect transistors (FETs), we improved carrier mobility. Substitutional doping of graphene in CVD opened a band gap for efficient FET operation and modulated the Fermi energy level for n-type or p-type features. The similarity between the chemical structure of graphene and organic semiconductors suggests potential applications of graphene in organic devices. We

  7. High quality reduced graphene oxide through repairing with multi-layered graphene ball nanostructures

    OpenAIRE

    Kyoung Hwan Kim; MinHo Yang; Kyeong Min Cho; Young-Si Jun; Sang Bok Lee; Hee-Tae Jung

    2013-01-01

    We present a simple and up-scalable method to produce highly repaired graphene oxide with a large surface area, by introducing spherical multi-layered graphene balls with empty interiors. These graphene balls are prepared via chemical vapor deposition (CVD) of Ni particles on the surface of the graphene oxides (GO). Transmission electron microscopy and Raman spectroscopy results reveal that defects in the GO surfaces are well repaired during the CVD process, with the help of nickel nanopartic...

  8. Selective catalytic burning of graphene by SiOx layer depletion.

    Science.gov (United States)

    Lee, Kyoung-Jae; Ihm, Kyuwook; Kumar, Yogesh; Baik, Jaeyoon; Yang, Mihyun; Shin, Hyun-Joon; Kang, Tai-Hee; Chung, Sukmin; Hong, Byung Hee

    2014-01-01

    We report catalytic decomposition of few-layer graphene on an Au/SiOx/Si surface wherein oxygen is supplied by dissociation of the native SiOx layer at a relatively low temperature of 400 °C. The detailed chemical evolution of the graphene covered SiOx/Si surface with and without gold during the catalytic process is investigated using a spatially resolved photoelectron emission method. The oxygen atoms from the native SiOx layer activate the gold-mediated catalytic decomposition of the entire graphene layer, resulting in the formation of direct contact between the Au and the Si substrate. The notably low contact resistivity found in this system suggests that the catalytic depletion of a SiOx layer could realize a new way to micromanufacture high-quality electrical contact. PMID:24316816

  9. Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene

    KAUST Repository

    Qaisi, Ramy M.

    2013-04-01

    Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.

  10. Graphene for Expandable Space Structures Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Graphene's tightly bonded impermeable single atomic layer of carbon offers unrivalled potential for lightweight flexible gas barrier applications. Graphene has been...

  11. Selective growth of graphene in layer-by-layer via chemical vapor deposition

    Science.gov (United States)

    Park, Jaehyun; An, Hyosub; Choi, Dong-Chul; Hussain, Sajjad; Song, Wooseok; An, Ki-Seok; Lee, Won-Jun; Lee, Naesung; Lee, Wan-Gyu; Jung, Jongwan

    2016-07-01

    Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (~40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices.Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene

  12. Large changes of graphene conductance as a function of lattice orientation between stacked layers

    International Nuclear Information System (INIS)

    Using the conductive tip of an atomic force microscope as an electrode, we found that the electrical conductance of graphite terraces separated by steps can vary by large factors of up to 100, depending on the relative lattice orientation of the surface and subsurface layers. This effect can be attributed to interlayer interactions that, when stacked commensurately in a Bernal sequence (ABAB…), cause the band gap to open. Misaligned layers, on the other hand, behave like graphene. Angular misorientations of a few degrees were found to cause large increases in the conductance of the top layer, with the maximum occurring around 30°. These results suggest new applications for graphene multilayers by stacking layers at various angles to control the resistance of the connected graphene ribbons in devices. (paper)

  13. Multilayer films of cationic graphene-polyelectrolytes and anionic graphene-polyelectrolytes fabricated using layer-by-layer self-assembly

    International Nuclear Information System (INIS)

    Extremely thin sheets of carbon atoms called graphene have been predicted to possess excellent thermal properties, electrical conductivity, and mechanical stiffness. To harness such properties in composite materials for multifunctional applications, one would require the incorporation of graphene. In this study, new thin film composites were created using layer-by-layer (LBL) assembly of polymer-coated graphitic nanoplatelets. The positive and negative polyelectrolytes used to cover graphene sheets were poly allylamine hydrochloride (PAH) and poly sodium 4-styrenesulfonate (PSS). The synthesized poly allylamine hydrochloride-graphene (PAH-G) and poly sodium 4-styrenesulfonate-gaphene (PSS-G) were characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and thermo gravimetric analysis (TGA). The multilayer films created by spontaneous sequential adsorption of PAH-G and PSS-G were characterized by ultra violet spectroscopy (UV-vis), scanning electron microscopy (SEM), and AFM. The electrical conductivity of the graphene/polyelectrolyte multilayer film composites measured by the four-point probe method was 0.2 S cm-1, which was sufficient for the construction of advanced electro-optical devices and sensors.

  14. Density Functional Study of adsorption of molecular hydrogen on graphene layers

    CERN Document Server

    Arellano, J S; Rubio, A; Alonso, J A

    2000-01-01

    Density functional theory has been used to study the adsorption of molecularH2 on a graphene layer. Different adsorption sites on top of atoms, bonds andthe center of carbon hexagons have been considered and compared. We concludethat the most stable configuration of H2 is physisorbed above the center of anhexagon. Barriers for classical diffusion are, however, very small.

  15. Nanoscale imaging of freestanding nitrogen doped single layer graphene.

    Science.gov (United States)

    Iyer, Ganjigunte R S; Wang, Jian; Wells, Garth; Bradley, Michael P; Borondics, Ferenc

    2015-02-14

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale. PMID:25584935

  16. Large-Area Quality Control of Atomically-Thin Layered Materials

    Science.gov (United States)

    Nolen, Craig Merten

    Fast progress in chemical vapor deposition of graphene and other quasi-two-dimensional layered materials such as topological insulators call for development of a reliable high-throughput method of layered materials identification and quality control. The number of atomic planes in graphene or other ultra-thin films has to be determined very fast and over large wafer-scale areas. The previously existed methods of accurate counting of the number of atomic planes in few-layer graphene were primarily based on micro-Raman spectroscopy. These methods were local, slow, and could not be scaled up to characterize the whole wafers. In this dissertation research I proposed and developed an automatic approach for graphene inspection over the wafer-size areas. The proposed method can be scaled up for industrial use. It is based on the image processing analysis of the pseudo-color contrasts uniquely assigned to each few-layer graphene region characterized by a specific number of atomic planes. The initial calibration of the technique is performed with the help of micro-Raman spectroscopy. The image processing is also used to account for the lighting non-uniformity of the samples. Implementation of the technique developed in this dissertation research reduces the cost and time required for graphene identification and quality assessment, and can become the next major impetus for practical applications of graphene, few-layer graphene and other atomically-thin films. The technique was tested on mechanically exfoliated graphene and then extended to the chemical-vapor-deposited graphene, and to bismuth telluride topological insulator thin films. The second part of the dissertation research deals with development of the electrostatic transfer process. The investigated approach allows one to transfer the patterned few-layer graphene films controllably to Si3N4 substrates compatible with other materials. The large-area quality control and graphene transfer techniques developed in this

  17. Dynamical screening of the van der Waals interaction between graphene layers

    Science.gov (United States)

    Dappe, Y. J.; Bolcatto, P. G.; Ortega, J.; Flores, F.

    2012-10-01

    The interaction between graphene layers is analyzed combining local orbital DFT and second order perturbation theory. For this purpose we use the linear combination of atomic orbitals-orbital occupancy (LCAO-OO) formalism, that allows us to separate the interaction energy as the sum of a weak chemical interaction between graphene layers plus the van der Waals interaction (Dappe et al 2006 Phys. Rev. B 74 205434). In this work, the weak chemical interaction is calculated by means of corrected-LDA calculations using an atomic-like sp3d5 basis set. The van der Waals interaction is calculated by means of second order perturbation theory using an atom-atom interaction approximation and the atomic-like-orbital occupancies. We also analyze the effect of dynamical screening in the van der Waals interaction using a simple model. We find that this dynamical screening reduces by 40% the van der Waals interaction. Taking this effect into account, we obtain a graphene-graphene interaction energy of 70 ± 5 meV/atom in reasonable agreement with the experimental evidence.

  18. Morphological and electrical properties of few layer graphene after nitrogen doping by LPCVD technique

    International Nuclear Information System (INIS)

    Highlights: • Synthesis of nitrogen-doped few-layer graphene films on Cu foil is achieved by LPCVD. • The N-doped graphene samples were characterized by Raman spectroscopy, SEM, and XPS. • SEM images showed dendritic-like morphology in undoped graphene. • The XPS of sample with 25% NH3 confirm the existence of nitrogen in doped graphene. - Abstract: Carbon materials doped with only one kind of C–N bonding configuration are a great outlook for studying doping effects on the electronic structure and electrical properties. Synthesis of nitrogen-doped few-layer graphene films on Cu foil is achieved by low pressure chemical vapor deposition (LPCVD). For investigation of nitrogen doped effect on structural, morphological and electrical properties of graphene the reactive gas was a mixture of CH4 and NH3 with the different ratio CH4 and NH3 by volume at the constant pressure of the growth chamber. The N-doped graphene (NG) samples were characterized by Raman spectroscopy, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS). Also in this experiment, the I–V characteristic carried out for study of electrical property of N-doped graphene at different gases mixing ratio with keithley 2361 system. The Raman spectroscopy showed D, G and 2D bound in doped and undoped graphene while we find the intensity of the 2D peak decreases and D peak intensity increases with the increase in the percent of NH3 in gas mixture. Likewise the presence of weak 2D band in all sample suggest that the produced samples are few layer graphene. SEM images showed dendritic-like morphology in undoped graphene and we observed that point like defect created among this morphology by increasing the nitrogen in synthesis process. The XPS results of sample with 25% NH3 in gas mixture confirm the existence of nitrogen in doped graphene which indicates the nitrogen atoms doped in the graphene lattice are mainly in the form of pyridinic nitrogen. The study on electrical

  19. Morphological and electrical properties of few layer graphene after nitrogen doping by LPCVD technique

    Energy Technology Data Exchange (ETDEWEB)

    Jafari, A.; Ghoranneviss, M.; Hantehzadeh, M.R.; Salar Elahi, A., E-mail: Salari_phy@yahoo.com

    2015-09-25

    Highlights: • Synthesis of nitrogen-doped few-layer graphene films on Cu foil is achieved by LPCVD. • The N-doped graphene samples were characterized by Raman spectroscopy, SEM, and XPS. • SEM images showed dendritic-like morphology in undoped graphene. • The XPS of sample with 25% NH{sub 3} confirm the existence of nitrogen in doped graphene. - Abstract: Carbon materials doped with only one kind of C–N bonding configuration are a great outlook for studying doping effects on the electronic structure and electrical properties. Synthesis of nitrogen-doped few-layer graphene films on Cu foil is achieved by low pressure chemical vapor deposition (LPCVD). For investigation of nitrogen doped effect on structural, morphological and electrical properties of graphene the reactive gas was a mixture of CH{sub 4} and NH{sub 3} with the different ratio CH{sub 4} and NH{sub 3} by volume at the constant pressure of the growth chamber. The N-doped graphene (NG) samples were characterized by Raman spectroscopy, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS). Also in this experiment, the I–V characteristic carried out for study of electrical property of N-doped graphene at different gases mixing ratio with keithley 2361 system. The Raman spectroscopy showed D, G and 2D bound in doped and undoped graphene while we find the intensity of the 2D peak decreases and D peak intensity increases with the increase in the percent of NH{sub 3} in gas mixture. Likewise the presence of weak 2D band in all sample suggest that the produced samples are few layer graphene. SEM images showed dendritic-like morphology in undoped graphene and we observed that point like defect created among this morphology by increasing the nitrogen in synthesis process. The XPS results of sample with 25% NH{sub 3} in gas mixture confirm the existence of nitrogen in doped graphene which indicates the nitrogen atoms doped in the graphene lattice are mainly in the form of pyridinic

  20. Nanoscale imaging of freestanding nitrogen doped single layer graphene

    Science.gov (United States)

    Iyer, Ganjigunte R. S.; Wang, Jian; Wells, Garth; Bradley, Michael P.; Borondics, Ferenc

    2015-01-01

    Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale.Graphene can be p-type or n-type doped by introduction of specific species. Doping can modulate the electronic properties of graphene, but opening a sizable-well-tuned bandgap is essential for graphene-based tunable electronic devices. N-doped graphene is widely used for device applications and is mostly achieved by introducing ammonia into the synthesis gas during the chemical vapor deposition (CVD) process. Post synthesis treatment studies to fine-tune the electron hole doping in graphene are limited. In this work realization of N-doping in large area freestanding single layer graphene (LFG) is achieved by post treatment in nitrogen plasma. The changes in the chemical and electronic properties of graphene are followed with Raman microscopy and mapped via synchrotron based scanning transmission X-ray microscopy (STXM) at the nanoscale. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05385k

  1. Controlling Interfacial Reactions and Intermetallic Compound Growth at the Interface of a Lead-free Solder Joint with Layer-by-Layer Transferred Graphene.

    Science.gov (United States)

    Ko, Yong-Ho; Lee, Jong-Dae; Yoon, Taeshik; Lee, Chang-Woo; Kim, Taek-Soo

    2016-03-01

    The immoderate growth of intermetallic compounds (IMCs) formed at the interface of a solder metal and the substrate during soldering can degrade the mechanical properties and reliability of a solder joint in electronic packaging. Therefore, it is critical to control IMC growth at the solder joints between the solder and the substrate. In this study, we investigated the control of interfacial reactions and IMC growth by the layer-by-layer transfer of graphene during the reflow process at the interface between Sn-3.0Ag-0.5Cu (in wt %) lead-free solder and Cu. As the number of graphene layers transferred onto the surface of the Cu substrate increased, the thickness of the total IMC (Cu6Sn5 and Cu3Sn) layer decreased. After 10 repetitions of the reflow process for 50 s above 217 °C, the melting temperature of Sn-3.0Ag-0.5Cu, with a peak temperature of 250 °C, the increase in thickness of the total IMC layer at the interface with multiple layers of graphene was decreased by more than 20% compared to that at the interface of bare Cu without graphene. Furthermore, the average diameter of the Cu6Sn5 scallops at the interface with multiple layers of graphene was smaller than that at the interface without graphene. Despite 10 repetitions of the reflow process, the growth of Cu3Sn at the interface with multiple layers of graphene was suppressed by more than 20% compared with that at the interface without graphene. The multiple layers of graphene at the interface between the solder metal and the Cu substrate hindered the diffusion of Cu atoms from the Cu substrate and suppressed the reactions between Cu and Sn in the solder. Thus, the multiple layers of graphene transferred at the interface between dissimilar metals can control the interfacial reaction and IMC growth occurring at the joining interface. PMID:26856638

  2. Growth of few-layer graphene on SiC at low temperature with the fluorocarbon plasma pre-etching

    International Nuclear Information System (INIS)

    With the fluorocarbon plasma pre-etching silicon carbide (SiC), a method to prepare few-layer graphene at lower temperature (950 °C) by thermal decomposition of SiC was developed. The graphene phase has been found by the X-ray photoelectron spectroscopy and Raman spectroscopy measurement. The planar sheet of carbon atoms was also observed by atomic force microscopy. The results demonstrate that few-layer graphene can form on SiC substrate at low temperature. - Highlights: ► We studied a method of growing graphene on SiC at low temperature. ► Fluorocarbon plasma pre-etching becomes a key factor in this method. ► Our graphene shows good quality

  3. Spotting 2D atomic layers on aluminum nitride thin films

    Science.gov (United States)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Raghavan, Srinivasan

    2015-10-01

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  4. High temperature and current density induced degradation of multi-layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Baoming; Haque, M. A., E-mail: mah37@psu.edu [Mechanical and Nuclear Engineering, The Pennsylvania State University, 314, Leonhard Building, University Park, Pennsylvania 16802 (United States); Mag-isa, Alexander E.; Kim, Jae-Hyun [Korea Institute of Machinery and Materials, 156 Gajungbuk-ro, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Lee, Hak-Joo [Korea Institute of Machinery and Materials, 156 Gajungbuk-ro, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Center for Advanced Meta-Materials (CAMM), 156 Gajungbuk-ro, Yuseong-gu, Daejeon 305-343 (Korea, Republic of)

    2015-10-19

    We present evidence of moderate current density, when accompanied with high temperature, promoting migration of foreign atoms on the surface of multi-layer graphene. Our in situ transmission electron microscope experiments show migration of silicon atoms at temperatures above 800 °C and current density around 4.2 × 10{sup 7} A/cm{sup 2}. Originating from the micro-machined silicon structures that clamp the freestanding specimen, the atoms are observed to react with the carbon atoms in the multi-layer graphene to produce silicon carbide at temperatures of 900–1000 °C. In the absence of electrical current, there is no migration of silicon and only pyrolysis of polymeric residue is observed.

  5. Plasmon modes of circular cylindrical double-layer graphene.

    Science.gov (United States)

    Zhao, Tao; Hu, Min; Zhong, Renbin; Chen, Xiaoxing; Zhang, Ping; Gong, Sen; Zhang, Chao; Liu, Shenggang

    2016-09-01

    In this paper, a theoretical investigation on plasmon modes in a circular cylindrical double-layer graphene structure is presented. Due to the interlayer electromagnetic interaction, there exist two branches of plasmon modes, the optical plasmon mode and the acoustic plasmon mode. The characteristics of these two modes, such as mode pattern, effective mode index and propagation loss, are analyzed. The modal behaviors can be effectively tuned by changing the distance between two graphene layers, the chemical potential of graphene and the permittivity of interlayer dielectric. Importantly, the breakup of tradeoff between mode confinement and propagation loss is discovered in the distance-dependent modal behavior, which originates from the unique dispersion properties of a double-layer graphene system. As a consequence, both strong mode confinement and longer propagation length can be achieved. Our results may provide good opportunities for developing applications based on graphene plasmonics in circular cylindrical structure. PMID:27607651

  6. Ultrahigh conductivity of large area suspended few layer graphene films

    Science.gov (United States)

    Rouhi, Nima; Wang, Yung Yu; Burke, Peter J.

    2012-12-01

    Room-temperature (atmospheric-pressure) electrical conductivity measurements of wafer-scale, large-area suspended (few layer) graphene membranes with areas up to 1000 μm2 (30 μm × 30 μm) are presented. Multiple devices on one wafer can be fabricated with high yield from the same chemical vapor deposition grown graphene sheet, transferred from a nickel growth substrate to large opening in a suspended silicon nitride support membrane. This represents areas two to orders of magnitude larger than prior transport studies on any suspended graphene device (single or few layer). We find a sheet conductivity of ˜2500 e2/h (or about 10 Ω/sq) of the suspended graphene, which is an order of magnitude higher than any previously reported sheet conductance of few layer graphene.

  7. Surface stress of graphene layers supported on soft substrate

    Science.gov (United States)

    Du, Feng; Huang, Jianyong; Duan, Huiling; Xiong, Chunyang; Wang, Jianxiang

    2016-05-01

    We obtain the surface stress of a single layer and multilayers of graphene supported on silicone substrates by measuring the deformation of the graphene-covered substrates induced by the surface tension of liquid droplets together with the Neumann’s triangle concept. We find that the surface stress of the graphene-covered substrate is significant larger than that of the bare substrate, and it increases with increasing graphene layers, and finally reaches a constant value of about 120 mN/m on three and more layers of graphene. This work demonstrates that the apparent surface stress of graphene-substrate systems can be tuned by the substrate and the graphene layers. The surface stress and the tuning effect of the substrate on it may have applications in design and characterization of graphene-based ultra-sensitive sensors and other devices. Moreover, the method may also be used to measure the surface stress of other ultrathin films supported on soft substrates.

  8. Surface stress of graphene layers supported on soft substrate

    Science.gov (United States)

    Du, Feng; Huang, Jianyong; Duan, Huiling; Xiong, Chunyang; Wang, Jianxiang

    2016-01-01

    We obtain the surface stress of a single layer and multilayers of graphene supported on silicone substrates by measuring the deformation of the graphene-covered substrates induced by the surface tension of liquid droplets together with the Neumann’s triangle concept. We find that the surface stress of the graphene-covered substrate is significant larger than that of the bare substrate, and it increases with increasing graphene layers, and finally reaches a constant value of about 120 mN/m on three and more layers of graphene. This work demonstrates that the apparent surface stress of graphene-substrate systems can be tuned by the substrate and the graphene layers. The surface stress and the tuning effect of the substrate on it may have applications in design and characterization of graphene-based ultra-sensitive sensors and other devices. Moreover, the method may also be used to measure the surface stress of other ultrathin films supported on soft substrates. PMID:27166087

  9. Surface stress of graphene layers supported on soft substrate.

    Science.gov (United States)

    Du, Feng; Huang, Jianyong; Duan, Huiling; Xiong, Chunyang; Wang, Jianxiang

    2016-01-01

    We obtain the surface stress of a single layer and multilayers of graphene supported on silicone substrates by measuring the deformation of the graphene-covered substrates induced by the surface tension of liquid droplets together with the Neumann's triangle concept. We find that the surface stress of the graphene-covered substrate is significant larger than that of the bare substrate, and it increases with increasing graphene layers, and finally reaches a constant value of about 120 mN/m on three and more layers of graphene. This work demonstrates that the apparent surface stress of graphene-substrate systems can be tuned by the substrate and the graphene layers. The surface stress and the tuning effect of the substrate on it may have applications in design and characterization of graphene-based ultra-sensitive sensors and other devices. Moreover, the method may also be used to measure the surface stress of other ultrathin films supported on soft substrates. PMID:27166087

  10. Electronic and Atomic-Scale Properties of Ultraflat CVD Graphene

    Science.gov (United States)

    Gutierrez, Christopher; Rosenthal, Ethan; Dadgar, Ali; Brown, Lola; Lochocki, Edward; Shen, Kyle; Park, Jiwoong; Pasupathy, Abhay

    2014-03-01

    Chemical vapor deposition (CVD) growth on copper foils has proven to be a reliable and cost-effective method for the production of graphene. However, most films grown by this method suffer from misoriented graphene grains as well as topographic roughness due to the polycrystallinity of the underlying copper foil substrate. Recent methods of copper foil treatment have allowed for the growth of graphene predominantly on large single crystal Cu(111) facets. In this talk we discuss scanning tunneling microscope (STM) measurements on such samples that reveal large terraces and atomically-resolved images that allow us to analyze the graphene-copper interaction during the growth. Scanning tunneling spectroscopy (STS) measurements and mapping are further employed to probe the electronic interaction between the graphene and copper substrate.

  11. Atomic-scale control of graphene magnetism by using hydrogen atoms.

    Science.gov (United States)

    González-Herrero, Héctor; Gómez-Rodríguez, José M; Mallet, Pierre; Moaied, Mohamed; Palacios, Juan José; Salgado, Carlos; Ugeda, Miguel M; Veuillen, Jean-Yves; Yndurain, Félix; Brihuega, Iván

    2016-04-22

    Isolated hydrogen atoms absorbed on graphene are predicted to induce magnetic moments. Here we demonstrate that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a ~20-millielectron volt spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is essentially localized on the carbon sublattice opposite to the one where the hydrogen atom is chemisorbed. This atomically modulated spin texture, which extends several nanometers away from the hydrogen atom, drives the direct coupling between the magnetic moments at unusually long distances. By using the STM tip to manipulate hydrogen atoms with atomic precision, it is possible to tailor the magnetism of selected graphene regions. PMID:27102478

  12. Growth and properties of few-layer graphene prepared by chemical vapor deposition

    OpenAIRE

    Park, Hye Jin; Meyer, Jannik; Roth, Siegmar; Skakalova, Viera

    2009-01-01

    The structure, and electrical, mechanical and optical properties of few-layer graphene (FLG) synthesized by chemical vapor deposition (CVD) on a Ni coated substrate were studied. Atomic resolution transmission electron microscope (TEM) images show highly crystalline single layer parts of the sample changing to multilayer domains where crystal boundaries are connected by chemical bonds. This suggests two different growth mechanisms. CVD and carbon segregation participate in the growth process ...

  13. Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (0001)

    OpenAIRE

    Harrison, S. E.; Capano, M. A.; Reifenberger, R.

    2010-01-01

    Atomically resolved scanning tunneling microscope images of carbon ridge defects found in few-layer graphene formed on the C-face (0001) of 4H-silicon carbide reveal a striated exterior surface formed from out-of-plane distortions of the hexagonal graphene lattice. While ridge formation is likely explained by compressive in-plane stresses coupled with the small values of the bending modulus for few-layer graphene,...

  14. Ultraviolet laser deposition of graphene thin films without catalytic layers

    KAUST Repository

    Sarath Kumar, S. R.

    2013-01-09

    In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

  15. Critical Dispersion Distance of Silicon Nanoparticles Intercalated between Graphene Layers

    OpenAIRE

    Shuze Zhu; Jason Galginaitis; Teng Li

    2012-01-01

    Nanocomposites of silicon nanoparticles (Si NPs) dispersed in between graphene layers emerge as potential anode materials of high-charge capacity for lithium-ion batteries. A key design requirement is to keep Si NPs dispersed without aggregation. Experimental design of the Si NP dispersion in graphene layers has remained largely empirical. Through extensive molecular dynamics simulations, we determine a critical NP dispersion distance as the function of NP size, below which Si NPs in between ...

  16. Mechanism of Thermal Conductivity Reduction in Few-Layer Graphene

    OpenAIRE

    Singh, Druv; Murthy, Jayathi Y.; Fisher, Timothy S.

    2011-01-01

    Using the linearized Boltzmann transport equation and perturbation theory, we analyze the reduction in the intrinsic thermal conductivity of few-layer graphene sheets accounting for all possible three-phonon scattering events. Even with weak coupling between layers, a significant reduction in the thermal conductivity of the out-of-plane acoustic modes is apparent. The main effect of this weak coupling is to open many new three-phonon scattering channels that are otherwise absent in graphene. ...

  17. Chemical storage of hydrogen in few-layer graphene.

    Science.gov (United States)

    Subrahmanyam, K S; Kumar, Prashant; Maitra, Urmimala; Govindaraj, A; Hembram, K P S S; Waghmare, Umesh V; Rao, C N R

    2011-02-15

    Birch reduction of few-layer graphene samples gives rise to hydrogenated samples containing up to 5 wt % of hydrogen. Spectroscopic studies reveal the presence of sp(3) C-H bonds in the hydrogenated graphenes. They, however, decompose readily on heating to 500 °C or on irradiation with UV or laser radiation releasing all the hydrogen, thereby demonstrating the possible use of few-layer graphene for chemical storage of hydrogen. First-principles calculations throw light on the mechanism of dehydrogenation that appears to involve a significant reconstruction and relaxation of the lattice. PMID:21282617

  18. Chemical storage of hydrogen in few-layer graphene

    OpenAIRE

    Subrahmanyam, K. S.; Kumar, Prashant; Maitra, Urmimala; Govindaraj, A.; Hembram, K.P.S.S.; Waghmare, Umesh V.; RAO, C. N. R.

    2011-01-01

    Birch reduction of few-layer graphene samples gives rise to hydrogenated samples containing up to 5 wt % of hydrogen. Spectroscopic studies reveal the presence of sp3 C-H bonds in the hydrogenated graphenes. They, however, decompose readily on heating to 500 °C or on irradiation with UV or laser radiation releasing all the hydrogen, thereby demonstrating the possible use of few-layer graphene for chemical storage of hydrogen. First-principles calculations throw light on the mechanism of dehyd...

  19. Electrochemical performance of nitrogen and oxygen radio-frequency plasma induced functional groups on tri-layered reduced graphene oxide

    International Nuclear Information System (INIS)

    Tri-layered reduced graphene oxide with better graphitization was synthesized and functioned using radio frequency N2 and O2 plasma. The layer numbers of reduced graphene oxide were determined by atomic force microscopy (AFM) and x-ray diffraction (XRD). The effect of plasma treatment on crystal structure, surface morphology and chemical composition were studied from XRD, transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), Fourier transforms infrared spectroscopy (FTIR) and Raman spectroscopy. The chemical species present in N2/O2 plasma during functionalization of tri-layered reduced graphene oxide was analyzed by optical emission spectroscopy. Tri-layered reduced graphene oxide and functioned tri-layered reduced graphene oxide exhibits higher electrochemical performance towards ferrocyanide redox reaction than glassy carbon and platinum electrode with much decrease in overpotential. This indicates that tri-layered reduced graphene oxide and N2/O2 functionalized tri-layered reduced graphene oxide are promising working electrodes in the application of electrochemical based biosensor. (papers)

  20. Atomic layer deposition of nanoporous biomaterials

    Directory of Open Access Journals (Sweden)

    Roger J Narayan

    2010-03-01

    Full Text Available Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials.

  1. Characterization of graphene and transition metal dichalcogenide at the atomic scale

    International Nuclear Information System (INIS)

    Edge structures and atomic defects are of fundamental importance since they can significantly affect the physical and chemical properties of low-dimensional materials, such as nanoribbons, and therefore merit thorough investigations at the atomic level. Recent developments of direct imaging and analytical techniques using an aberration-corrected scanning transmission electron microscope (STEM) have provided direct access to information on the local atomic structure and the chemical composition at the atomic scale. In this review, we report on the discrimination of single atoms including dopant atoms on a monolayered transition-metal dichalcogenide (TMD) nanoribbon and a single nitrogen adatom on graphene by time-resolved annular dark-field (ADF) imaging and spatially resolved electron energy loss spectroscopy (EELS). We also show that in situ scanning transmission electron microscopy can be used to monitor the structural transformation between semiconducting (2H) and metallic (1T) phases in monolayer MoS2, and can enable direct observation of in-plane graphene growth at a step edge of a bi-layer graphene and domain boundary formation during growth with atomic-resolution. (author)

  2. Characterization of Graphene and Transition Metal Dichalcogenide at the Atomic Scale

    Science.gov (United States)

    Liu, Zheng; Lin, Yung-Chang; Warner, Jamie H.; Teng, Po-Yuan; Yeh, Chao-Hui; Chiu, Po-Wen; Iijima, Sumio; Suenga, Kazu

    2015-12-01

    Edge structures and atomic defects are of fundamental importance since they can significantly affect the physical and chemical properties of low-dimensional materials, such as nanoribbons, and therefore merit thorough investigations at the atomic level. Recent developments of direct imaging and analytical techniques using an aberration-corrected scanning transmission electron microscope (STEM) have provided direct access to information on the local atomic structure and the chemical composition at the atomic scale. In this review, we report on the discrimination of single atoms including dopant atoms on a monolayered transition-metal dichalcogenide (TMD) nanoribbon and a single nitrogen adatom on graphene by time-resolved annular dark-field (ADF) imaging and spatially resolved electron energy loss spectroscopy (EELS). We also show that in situ scanning transmission electron microscopy can be used to monitor the structural transformation between semiconducting (2H) and metallic (1T) phases in monolayer MoS2, and can enable direct observation of in-plane graphene growth at a step edge of a bi-layer graphene and domain boundary formation during growth with atomic-resolution.

  3. Raman and ellipsometry spectroscopic analysis of graphene films grown directly on Si substrate via CVD technique for estimating the graphene atomic planes number

    Science.gov (United States)

    Al-Hazmi, F. S.; Beall, Gary W.; Al-Ghamdi, A. A.; Alshahrie, Ahmed; Shokr, F. S.; Mahmoud, Waleed E.

    2016-08-01

    Two reliable approaches for estimating the number of atomic planes of graphene films grown on Si substrate were demonstrated by Raman and ellipsometry spectroscopies. The first approach depends on the measurement of the ratio of the integrated Raman scattering intensity of the graphene G band to the optical phonon band of Si substrate (IG/ISi). The second approach belongs to ellipsometry measurement of the ratio of the amplitude of the reflected polarized light from the surface of the graphene films to the amplitude of reflected polarized light from the surface of the Si substrate (ΨG/ΨSi). These two approaches could efficiently recognize the number of atomic planes in the graphene films (1 ≤ n ≤ 10). The results were compared with atomic force microscopy (AFM) measurement and showed a linear regression with slope of 0.36 ± 0.01 nm/graphene layer. The Two approaches will open a new avenue to efficiently count the number of graphene layers during the preparation process.

  4. Atomic resolution electrostatic potential mapping of graphene sheets by off-axis electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Cooper, David, E-mail: david.cooper@cea.fr [University Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054, Grenoble (France); Pan, Cheng-Ta; Haigh, Sarah [School of Materials, The University of Manchester, Manchester M13 9PL (United Kingdom)

    2014-06-21

    Off-axis electron holography has been performed at atomic resolution with the microscope operated at 80 kV to provide electrostatic potential maps from single, double, and triple layer graphene. These electron holograms have been reconstructed in order to obtain information about atomically resolved and mean inner potentials. We propose that off-axis electron holography can now be used to measure the electrical properties in a range of two-dimensional semiconductor materials and three dimensional devices comprising stacked layers of films to provide important information about their electrical properties.

  5. Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene

    Science.gov (United States)

    Costa, Sara D.; Weis, Johan Ek; Frank, Otakar; Fridrichová, Michaela; Kalbac, Martin

    2016-06-01

    In this report important Raman modes for the evaluation of strain in graphene (the 2D and 2D‧) are analyzed. The isotope labeling is used to disentangle contribution of individual graphene layers of graphene bilayer to the studied Raman modes. It is shown that for Bernal-stacked bilayers, the 2D and the 2D‧ Raman modes have three distinct components that can be assigned to processes originating solely from the top graphene layer, bottom graphene layer, and from a combination of processes originating both from the top and bottom layers. The reported results thus enable addressing the properties of individual graphene layers in graphene bilayer by Raman spectroscopy.

  6. Few-layer graphene growth from polystyrene as solid carbon source utilizing simple APCVD method

    Science.gov (United States)

    Ahmadi, Shahrokh; Afzalzadeh, Reza

    2016-07-01

    This research article presents development of an economical, simple, immune and environment friendly process to grow few-layer graphene by controlling evaporation rate of polystyrene on copper foil as catalyst and substrate utilizing atmospheric pressure chemical vapor deposition (APCVD) method. Evaporation rate of polystyrene depends on molecular structure, amount of used material and temperature. We have found controlling rate of evaporation of polystyrene by controlling the source temperature is easier than controlling the material weight. Atomic force microscopy (AFM) as well as Raman Spectroscopy has been used for characterization of the layers. The frequency of G‧ to G band ratio intensity in some samples varied between 0.8 and 1.6 corresponding to few-layer graphene. Topography characterization by atomic force microscopy confirmed Raman results.

  7. Atomic-Scale Sliding Friction on Graphene in Water.

    Science.gov (United States)

    Vilhena, J G; Pimentel, Carlos; Pedraz, Patricia; Luo, Feng; Serena, Pedro A; Pina, Carlos M; Gnecco, Enrico; Pérez, Rubén

    2016-04-26

    The sliding of a sharp nanotip on graphene completely immersed in water is investigated by molecular dynamics (MD) and atomic force microscopy. MD simulations predict that the atomic-scale stick-slip is almost identical to that found in ultrahigh vacuum. Furthermore, they show that water plays a purely stochastic role in sliding (solid-to-solid) friction. These observations are substantiated by friction measurements on graphene grown on Cu and Ni, where, oppositely of the operation in air, lattice resolution is readily achieved. Our results promote friction force microscopy in water as a robust alternative to ultra-high-vacuum measurements. PMID:26982997

  8. Atomic Structures of Graphene, Benzene and Methane with Bond Lengths as Sums of the Single, Double and Resonance Bond Radii of Carbon

    CERN Document Server

    Heyrovska, Raji

    2008-01-01

    Two dimensional layers of graphene are currently drawing a great attention in fundamental and applied nanoscience. Graphene consists of interconnected hexagons of carbon atoms as in graphite. This article presents for the first time the structures of graphene at the atomic level and shows how it differs from that of benzene, due to the difference in the double bond and resonance bond based radii of carbon. The carbon atom of an aliphatic compound such as methane has a longer covalent single bond radius as in diamond. All the atomic structures presented here have been drawn to scale.

  9. Antiferro quadrupolar ordering in Fe intercalated few layers graphene

    Directory of Open Access Journals (Sweden)

    Abu Jahid Akhtar

    2013-07-01

    Full Text Available The π electron cloud above and below the honeycomb structure of graphene causes each carbon atom to carry a permanent electric quadrupole moment which can attach any cation to impart interesting physical properties. We have synthesized Fe intercalated graphene structures to investigate tunable magnetic properties as a result of this chemical modification. An interesting antiferro quadrupolar ordering is observed which arises due to a coupling between magnetic dipole moment of Fe and electric quadrupole moment on graphene surface. In contrast to antiferromagnetic Neel temperature (TN, here the ordering temperature (TQ increases from 35.5 K to 47.5 K as the magnetic field is raised upto 1 Tesla.

  10. Adsorption by design: Tuning atom-graphene van der Waals interactions via mechanical strain

    Science.gov (United States)

    Nichols, Nathan S.; Del Maestro, Adrian; Wexler, Carlos; Kotov, Valeri N.

    2016-05-01

    We aim to understand how the van der Waals force between neutral adatoms and a graphene layer is modified by uniaxial strain and electron correlation effects. A detailed analysis is presented for three atoms (He, H, and Na) and graphene strain ranging from weak to moderately strong. We show that the van der Waals potential can be significantly enhanced by strain, and present applications of our results to the problem of elastic scattering of atoms from graphene. In particular, we find that quantum reflection can be significantly suppressed by strain, meaning that dissipative inelastic effects near the surface become of increased importance. Furthermore, we introduce a method to independently estimate the Lennard-Jones parameters used in an effective model of He interacting with graphene, and determine how they depend on strain. At short distances, we find that strain tends to reduce the interaction strength by pushing the location of the adsorption potential minima to higher distances above the deformed graphene sheet. This opens up the exciting possibility of mechanically engineering an adsorption potential, with implications for the formation and observation of anisotropic low-dimensional superfluid phases.

  11. Absence of a stable atomic structure in fluorinated graphene.

    Science.gov (United States)

    Boukhvalov, Danil W

    2016-05-21

    Based on the results of first-principles calculations we demonstrate that significant distortion of graphene sheets caused by adsorption of fluorine atoms leads to the formation of metastable patterns for which the next step of fluorination is considerably less energetically favorable. Existence of these stable patterns oriented along the armchair direction makes possible the synthesis of various CFx structures. The combination of strong distortion of the nonfluorinated graphene sheet with the doping caused by the polar nature of C-F bonds reduces the energy cost of migration and the energy of migration barriers, making possible the migration of fluorine atoms on the graphene surface as well as transformation of the shapes of fluorinated areas. The decreasing energy cost of migration with increasing fluorine content also leads to increasing numbers of single fluorine adatoms, which could be the source of magnetic moments. PMID:27116897

  12. Direct visualization of atomically precise nitrogen-doped graphene nanoribbons

    International Nuclear Information System (INIS)

    We have fabricated atomically precise nitrogen-doped chevron-type graphene nanoribbons by using the on-surface synthesis technique combined with the nitrogen substitution of the precursors. Scanning tunneling microscopy and spectroscopy indicate that the well-defined nanoribbons tend to align with the neighbors side-by-side with a band gap of 1.02 eV, which is in good agreement with the density functional theory calculation result. The influence of the high precursor coverage on the quality of the nanoribbons is also studied. We find that graphene nanoribbons with sufficient aspect ratios can only be fabricated at sub-monolayer precursor coverage. This work provides a way to construct atomically precise nitrogen-doped graphene nanoribbons.

  13. Direct visualization of atomically precise nitrogen-doped graphene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yi; Zhang, Yanfang; Li, Geng; Lu, Jianchen; Du, Shixuan, E-mail: sxdu@iphy.ac.cn, E-mail: feng@mpip-mainz.mpg.de; Gao, Hong-Jun [Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China); Lin, Xiao [University of Chinese Academy of Sciences and Institute of Physics, Chinese Academy of Sciences, Beijing 100049 (China); Berger, Reinhard; Feng, Xinliang, E-mail: sxdu@iphy.ac.cn, E-mail: feng@mpip-mainz.mpg.de; Müllen, Klaus [Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz (Germany)

    2014-07-14

    We have fabricated atomically precise nitrogen-doped chevron-type graphene nanoribbons by using the on-surface synthesis technique combined with the nitrogen substitution of the precursors. Scanning tunneling microscopy and spectroscopy indicate that the well-defined nanoribbons tend to align with the neighbors side-by-side with a band gap of 1.02 eV, which is in good agreement with the density functional theory calculation result. The influence of the high precursor coverage on the quality of the nanoribbons is also studied. We find that graphene nanoribbons with sufficient aspect ratios can only be fabricated at sub-monolayer precursor coverage. This work provides a way to construct atomically precise nitrogen-doped graphene nanoribbons.

  14. Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources

    International Nuclear Information System (INIS)

    The ability to achieve atomic layer precision is the utmost goal in the implementation of atomic layer etch technology. Carbon-based materials such as carbon nanotubes (CNTs) and graphene are single atomic layers of carbon with unique properties and, as such, represent the ultimate candidates to study the ability to process with atomic layer precision and assess impact of plasma damage to atomic layer materials. In this work, the authors use these materials to evaluate the atomic layer processing capabilities of electron beam generated plasmas. First, the authors evaluate damage to semiconducting CNTs when exposed to beam-generated plasmas and compare these results against the results using typical plasma used in semiconductor processing. The authors find that the beam generated plasma resulted in significantly lower current degradation in comparison to typical plasmas. Next, the authors evaluated the use of electron beam generated plasmas to process graphene-based devices by functionalizing graphene with fluorine, nitrogen, or oxygen to facilitate atomic layer deposition (ALD). The authors found that all adsorbed species resulted in successful ALD with varying impact on the transconductance of the graphene. Furthermore, the authors compare the ability of both beam generated plasma as well as a conventional low ion energy inductively coupled plasma (ICP) to remove silicon nitride (SiN) deposited on top of the graphene films. Our results indicate that, while both systems can remove SiN, an increase in the D/G ratio from 0.08 for unprocessed graphene to 0.22 to 0.26 for the beam generated plasma, while the ICP yielded values from 0.52 to 1.78. Generally, while some plasma-induced damage was seen for both plasma sources, a much wider process window as well as far less damage to CNTs and graphene was observed when using electron beam generated plasmas

  15. Capacitance of Graphene Bilayer as a Which-Layer Probe

    OpenAIRE

    Young, Andrea F.; Levitov, Leonid S.

    2011-01-01

    The unique capabilities of capacitance measurements in bilayer graphene enable probing of layer-specific properties that are normally out of reach in transport measurements. Furthermore, capacitance measurements in the top-gate and penetration field geometries are sensitive to different physical quantities: the penetration field capacitance probes the two layers equally, whereas the top gate capacitance preferentially samples the near layer, resulting in the "near-layer capacitance enhancemen...

  16. Single-layer graphene on silicon nitride micromembrane resonators

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  17. Single-layer graphene on silicon nitride micromembrane resonators

    DEFF Research Database (Denmark)

    Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil;

    2014-01-01

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospe...... new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene....... for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling...... of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of...

  18. Pattern recognition approach to quantify the atomic structure of graphene

    DEFF Research Database (Denmark)

    Kling, Jens; Vestergaard, Jacob Schack; Dahl, Anders Bjorholm;

    2014-01-01

    We report a pattern recognition approach to detect the atomic structure in high-resolution transmission electron microscopy images of graphene. The approach provides quantitative information such as carbon-carbon bond lengths and bond length variations on a global and local scale alike. © 2014...

  19. Ultraviolet dielectric hyperlens with layered graphene and boron nitride

    CERN Document Server

    Wang, Junxia; Zhang, Baile

    2012-01-01

    The concept of hyperlens, as a novel transformation optics device, is a promising real-time super-resolution lens that can effectively transform evanescent waves into propagating waves and thus break the diffraction limit. However, previous hyperlens implementations usually adopted metal which would absorb most energy during light transmission and thus deteriorate imaging efficiency. Here we propose a novel hyperlens design based on dielectric layered graphene and h-boron nitride (h-BN) whose performance can surpass the counterpart design with metal. Our first-principle and Kramers-Kronig relation calculation shows that both layered graphene and layered h-BN exhibit strong anisotropic properties in ultraviolet spectrum regions, where their permittivity components perpendicular to the optic axis can be negative while the components parallel to the optic axis can be positive. Based on the anisotropic properties, flat and cylindrical hyperlenses are designed and numerically verified with layered graphene at 1200...

  20. Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

    International Nuclear Information System (INIS)

    Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2–3 sccm CH4 for 30 minutes. (rapid communication)

  1. Tunable hybrid surface waves supported by a graphene layer

    CERN Document Server

    Iorsh, Ivan; Belov, Pavel; Kivshar, Yuri

    2012-01-01

    We study surface waves localized near a surface of a semi-infinite dielectric medium covered by a layer of graphene in the presence of a strong external magnetic field. We demonstrate that both TE-TM hybrid surface plasmons can propagate along the graphene surface. We analyze the effect of the Hall conductivity on the disper- sion of hybrid surface waves and suggest a possibility to tune the plasmon dispersion by the magnetic field.

  2. Strain Engineering of Kapitza Resistance in Few-Layer Graphene

    DEFF Research Database (Denmark)

    Chen, Jie; Walther, Jens Honore; Koumoutsakos, Petros

    2014-01-01

    We demonstrate through molecular dynamics simulations that the Kapitza resistance in few-layer graphene (FLG) can be controlled by applying mechanical strain. For unstrained FLG, the Kapitza resistance decreases with the increase of thickness and reaches an asymptotic value of 6 × 10–10 m2K/W at ...... is applied. Our study suggests that graphene can be exploited for both heat dissipation and insulation through strain engineering....

  3. Elastic Buckling Behaviour of General Multi-Layered Graphene Sheets

    Directory of Open Access Journals (Sweden)

    Rong Ming Lin

    2015-04-01

    Full Text Available Elastic buckling behaviour of multi-layered graphene sheets is rigorously investigated. Van der Waals forces are modelled, to a first order approximation, as linear physical springs which connect the nodes between the layers. Critical buckling loads and their associated modes are established and analyzed under different boundary conditions, aspect ratios and compressive loading ratios in the case of graphene sheets compressed in two perpendicular directions. Various practically possible loading configurations are examined and their effect on buckling characteristics is assessed. To model more accurately the buckling behaviour of multi-layered graphene sheets, a physically more representative and realistic mixed boundary support concept is proposed and applied. For the fundamental buckling mode under mixed boundary support, the layers with different boundary supports deform similarly but non-identically, leading to resultant van der Waals bonding forces between the layers which in turn affect critical buckling load. Results are compared with existing known solutions to illustrate the excellent numerical accuracy of the proposed modelling approach. The buckling characteristics of graphene sheets presented in this paper form a comprehensive and wholesome study which can be used as potential structural design guideline when graphene sheets are employed for nano-scale sensing and actuation applications such as nano-electro-mechanical systems.

  4. Electrochemical double layer near polar reduced graphene oxide electrode: Insights from molecular dynamic study

    International Nuclear Information System (INIS)

    Graphical abstract: Display Omitted - Highlights: • We have investigated the electrochemical double layer capacity of polar reduced graphene oxide electrode with aqueous solution by using molecular dynamic simulation, which is rare in previous studies currently. • The dipole orientation of water molecules near the polar reduced graphene oxide electrode will strongly depend on the polarity of functional group on reduced graphene oxide surface. The polarization interaction also restricts the rotation response of water molecules and weakens their mobility near the charged electrode, resulting in the decrease of integral capacitance value of reduced graphene oxide with increasing of functional groups concentration. • To obtain the accurate partial charge distribution of decorated functional group and corresponding surface polarization of reduced graphene oxide electrode, Bader charge analysis based on density functional theory calculations is used. - Abstract: Reduced graphene oxide (rGO) has emerged as an attractive choice for electrochemical double layer capacitors. Based on the accurate atomic partial charge distribution determined by density functional theory calculations, the electrochemical double layer structural and capacitive properties at the rGO/NaCl aqueous electrolyte interface are studied using the molecular dynamic simulations. Due to the charge redistribution mainly around oxygen functional groups, rGO will form a strong polar surface. It will significantly change the arrangement of surrounding water molecules through a hydrogen bond like interaction. The change of dipole orientation of water will induce corresponding net charge redistribution, leading to a change of potential of zero charge of rGO electrode. The polarization interaction also restricts the orientation of electrolyte molecules and weakens their mobility, resulting in the decrease of integral capacitance value of rGO with increasing of functional groups concentration. This work

  5. Structure, stability and defects of single layer hexagonal BN in comparison to graphene

    International Nuclear Information System (INIS)

    We study by molecular dynamics the structural properties of single layer hexagonal boron nitride (h-BN) in comparison to graphene. We show that the Tersoff bond order potential developed for BN by Albe et al (1997 Radiat. Eff. Defects Solids 141 8597) gives a thermally stable hexagonal single layer with a bending constant κ = 0.54 eV at T = 0. We find that the non-monotonic behaviour of the lattice parameter, the expansion of the interatomic distance and the growth of the bending rigidity with temperature are qualitatively similar to those of graphene. Conversely, the energetics of point defects is extremely different: instead of StoneWales defects, the two lowest energy defects in h-BN involve either a broken bond or an out-of-plane displacement of a N atom to form a tetrahedron with three B atoms in the plane. We provide the formation energies and an estimate of the energy barriers.

  6. Undercoordinated atoms at Rh nanoclusters supported by epitaxial graphene

    International Nuclear Information System (INIS)

    Full text: Local atomic coordination in nanoclusters varies widely between edge, kink, facet and bulk atoms causing relevant modifications of their physical and chemical properties. We show that, by using epitaxial graphene grown on Ir(111) as a template, it is possible to produce a homogeneous distribution of regular and ordered self-assembled Rh nanoclusters which not only allow clear identification of edge, facets and bulk atoms but also unveil size-dependent structural modifications. Combining high-energy resolution core level Photoelectron Spectroscopy, Scanning Tunneling Microscopy and Density Functional Theory we highlight the deep connection existing between nanoparticle morphological structure, local atomic coordination, interatomic distance relaxation, and electronic structure. Measured and calculated atomic core levels shifts quantitatively describe how nanoclusters minimize total energy by increasing effective atomic coordination. We present a pathway to obtain the desired nanocluster morphology by measuring the fraction of edge, facet and bulk atoms, providing therefore a knob to also tune magnetic and catalytic properties. (author)

  7. Self-regulating homogenous growth of high-quality graphene on Co-Cu composite substrate for layer control

    Science.gov (United States)

    Lin, Tianquan; Huang, Fuqiang; Wan, Dongyun; Bi, Hui; Xie, Xiaoming; Jiang, Mianheng

    2013-06-01

    The composite substrate of Co and Cu was proposed to grow homogenous high quality wafer-size graphene films by an atmosphere pressure CVD method. The composite substrate consists of a moderate-carbon-solubility metal top (Co coating) as a C-dissolving layer and a low-carbon-solubility metal base (Cu foil) as a C-rejecting layer. During the CVD process, the interdiffusion of Co and Cu atoms occurs in the composite. With the dynamic control on Co and Cu alloying process to affect the carbon solubility, active carbon atoms captured by the Co layer were segregated to form spontaneously a high-quality graphene film on the top of Cu-Co substrate. The tunable layer-number of the graphene films can be precisely controlled by adjusting the thickness of the Co layer. High quality single-layered graphene films with a 98% yield were prepared on an 80 nm-Co-coated Cu foil and insensitive to growth temperature and time. More importantly, this type of composite substrate has also been developed to grow AB-stacked bilayers and three-layer graphene with 99% surface coverage and absence of defects. The approach is opening up a new avenue for high-quality graphene production with precise layer control through composite substrate design.The composite substrate of Co and Cu was proposed to grow homogenous high quality wafer-size graphene films by an atmosphere pressure CVD method. The composite substrate consists of a moderate-carbon-solubility metal top (Co coating) as a C-dissolving layer and a low-carbon-solubility metal base (Cu foil) as a C-rejecting layer. During the CVD process, the interdiffusion of Co and Cu atoms occurs in the composite. With the dynamic control on Co and Cu alloying process to affect the carbon solubility, active carbon atoms captured by the Co layer were segregated to form spontaneously a high-quality graphene film on the top of Cu-Co substrate. The tunable layer-number of the graphene films can be precisely controlled by adjusting the thickness of the Co

  8. Molecular Layer-seeded Ultra-thin Top-gate Dielectrics for High Transconductance Graphene Transistors

    Science.gov (United States)

    Sangwan, Vinod; Jariwala, Deep; Karmel, Hunter; Alaboson, Justice; Lauhon, Lincoln; Marks, Tobin; Hersam, Mark

    2012-02-01

    The potential of graphene in integrated analog and digital circuits can only be fully realized through incorporation of ultra-thin gate dielectrics to enable large-scale small-channel graphene field-effect transistors (GFETs). Atomic-layer deposition (ALD) is a viable technique to fabricate gate-dielectrics, however, it requires a seeding layer on otherwise inert graphene. Here, we demonstrate a single molecule thick perylene-3,4,9,10-tetracarboxylic dianhydride overlayer as an effective seeding layer to grow high-κ Al2O3 on mechanically exfoliated graphene for high-performance GFETs. Using an ultra-thin (films (5-10 nm), we demonstrate fabrication of the thinnest ALD-grown gate-dielectric (4 nm) reported to date in top-gated GFETs. This yields high performance GFETs with the intrinsic transconductance parameter approaching 2.4 mS and the field-effect mobility ˜3000 cm^2/Vs. We also demonstrate generalization of this molecular layer seeded-ALD growth method to higher- κ gate dielectrics, yielding further enhanced GFET transconductance for possible application to radio-frequency circuits.

  9. Fingerprints of Multiple Electron Scatterings in Single-Layer Graphene

    Science.gov (United States)

    Jung, Minbok; Sohn, So-Dam; Park, Jonghyun; Lee, Keun-U.; Shin, Hyung-Joon

    2016-03-01

    The electrons in graphene exhibit unusual behaviours, which can be described by massless Dirac quasiparticles. Understanding electron scattering in graphene has been of significant importance for its future application in electronic devices because electron scattering determines electrical properties such as resistivity and electron transport. There are two types of electron scatterings in graphene: intervalley scattering and intravalley scattering. In single-layer graphene, to date, it has been difficult to observe intravalley scattering because of the suppression of backscattering resulting from the chiral nature of the electrons in graphene. Here, we report the multiple electron scattering behaviours in single-layer graphene on a metallic substrate. By applying one- and two-dimensional Fourier transforms to maps of the local density of states, we can distinguish individual scattering processes from complex interference patterns. These techniques enable us to provide direct evidence of intravalley scattering, revealing a linear dispersion relation with a Fermi velocity of ~7.4 × 105 m/s.

  10. Fingerprints of Multiple Electron Scatterings in Single-Layer Graphene

    Science.gov (United States)

    Jung, Minbok; Sohn, So-Dam; Park, Jonghyun; Lee, Keun-U; Shin, Hyung-Joon

    2016-01-01

    The electrons in graphene exhibit unusual behaviours, which can be described by massless Dirac quasiparticles. Understanding electron scattering in graphene has been of significant importance for its future application in electronic devices because electron scattering determines electrical properties such as resistivity and electron transport. There are two types of electron scatterings in graphene: intervalley scattering and intravalley scattering. In single-layer graphene, to date, it has been difficult to observe intravalley scattering because of the suppression of backscattering resulting from the chiral nature of the electrons in graphene. Here, we report the multiple electron scattering behaviours in single-layer graphene on a metallic substrate. By applying one- and two-dimensional Fourier transforms to maps of the local density of states, we can distinguish individual scattering processes from complex interference patterns. These techniques enable us to provide direct evidence of intravalley scattering, revealing a linear dispersion relation with a Fermi velocity of ~7.4 × 105 m/s. PMID:26936521

  11. Fabrication of graphene/polyaniline composite multilayer films by electrostatic layer-by-layer assembly

    International Nuclear Information System (INIS)

    A novel graphene/polyaniline composite multilayer film was fabricated by electrostatic interactions induced layer-by-layer self-assembly technique, using water dispersible and negatively charged chemically converted graphene (CCG) and positively charged polyaniline (PANI) as building blocks. CCG was achieved through partly reduced graphene oxide, which remained carboxyl group on its surface. The remaining carboxyl groups not only retain the dispersibility of CCG, but also allow the growth of the multilayer films via electrostatic interactions between graphene and PANI. The structure and morphology of the obtained CCG/PANI multilayer film are characterized by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Ultraviolet–visible absorption spectrum (UV–vis), scanning electron microscopy (SEM), Raman spectroscopy and X-Ray Diffraction (XRD). The electrochemical properties of the resulting film are studied using cyclic voltammetry (CV), which showed that the resulting CCG/PANI multilayer film kept electroactivity in neutral solution and showed outstanding cyclic stability up to 100 cycles. Furthermore, the composite film exhibited good electrocatalytic ability toward ascorbic acid (AA) with a linear response from 1×10−4 to 1.2×10−3 M with the detect limit of 5×10−6 M. This study provides a facile and effective strategy to fabricate graphene/PANI nanocomposite film with good electrochemical property, which may find potential applications in electronic devices such as electrochemical sensor. - Graphical abstract: A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. - Highlights: • A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. • The water dispersible and negatively charged graphene (CCG) was used as building block. • CCG was achieved through partly reduced graphene oxide with carboxyl group on its surface. • CCG/PANI film kept electroactivity in

  12. Crystallographic growth and alignment of carbon nanotubes on few-layer graphene

    Science.gov (United States)

    Arash, Aram; Hunley, Patrick D.; Nasseri, Mohsen; Boland, Mathias J.; Sundararajan, Abhishek; Hudak, Bethany M.; Guiton, Beth S.; Strachan, Douglas R.

    2015-03-01

    Hybrid carbon nanotube and graphene structures are emerging as an exciting material system built from a common sp2 carbon backbone. Such hybrid systems have promise for use in improving the performance of energy storage and high-speed electronic applications. Towards the attainment of such hybrid materials, the catalytic growth and crystallographic alignment of these integrated structures are investigated along with the atomic-scale features of their interfaces. The catalytic activity of nanoparticles to form carbon nanotubes on the surface of few-layer graphene is tuned through precise feedstock application. Through careful materials synthesis, the interfaces of these hybrid carbon nanotube - graphene systems are investigated through ultra-high resolution electron microscopy.

  13. Giant edge state splitting at atomically precise graphene zigzag edges

    Science.gov (United States)

    Wang, Shiyong; Talirz, Leopold; Pignedoli, Carlo A.; Feng, Xinliang; Müllen, Klaus; Fasel, Roman; Ruffieux, Pascal

    2016-05-01

    Zigzag edges of graphene nanostructures host localized electronic states that are predicted to be spin-polarized. However, these edge states are highly susceptible to edge roughness and interaction with a supporting substrate, complicating the study of their intrinsic electronic and magnetic structure. Here, we focus on atomically precise graphene nanoribbons whose two short zigzag edges host exactly one localized electron each. Using the tip of a scanning tunnelling microscope, the graphene nanoribbons are transferred from the metallic growth substrate onto insulating islands of NaCl in order to decouple their electronic structure from the metal. The absence of charge transfer and hybridization with the substrate is confirmed by scanning tunnelling spectroscopy, which reveals a pair of occupied/unoccupied edge states. Their large energy splitting of 1.9 eV is in accordance with ab initio many-body perturbation theory calculations and reflects the dominant role of electron-electron interactions in these localized states.

  14. Plasmon resonance in single- and double-layer CVD graphene nanoribbons

    DEFF Research Database (Denmark)

    Wang, Di; Emani, Naresh K.; Chung, Ting Fung;

    2015-01-01

    Dynamic tunability of the plasmonic resonance in graphene nanoribbons is desirable in the near-infrared. We demonstrated a constant blue shift of plasmonic resonances in double-layer graphene nanoribbons with respect to single-layer graphene nanoribbons. © OSA 2015.......Dynamic tunability of the plasmonic resonance in graphene nanoribbons is desirable in the near-infrared. We demonstrated a constant blue shift of plasmonic resonances in double-layer graphene nanoribbons with respect to single-layer graphene nanoribbons. © OSA 2015....

  15. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  16. Modulated surface of single-layer graphene controls cell behavior

    Czech Academy of Sciences Publication Activity Database

    Hubálek Kalbáčová, M.; Verdanová, M.; Brož, A.; Vetushka, Aliaksi; Fejfar, Antonín; Kalbáč, Martin

    2014-01-01

    Roč. 72, JUN (2014), s. 207-214. ISSN 0008-6223 R&D Projects: GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 ; RVO:61388955 Keywords : graphene * biomedicine * atomic force microscopy Subject RIV: CE - Biochemistry Impact factor: 6.196, year: 2014

  17. Dynamic negative compressibility of few-layer graphene, h-BN, and MoS2.

    Science.gov (United States)

    Barboza, Ana Paula M; Chacham, Helio; Oliveira, Camilla K; Fernandes, Thales F D; Ferreira, Erlon H Martins; Archanjo, Braulio S; Batista, Ronaldo J C; de Oliveira, Alan B; Neves, Bernardo R A

    2012-05-01

    We report a novel mechanical response of few-layer graphene, h-BN, and MoS(2) to the simultaneous compression and shear by an atomic force microscope (AFM) tip. The response is characterized by the vertical expansion of these two-dimensional (2D) layered materials upon compression. Such effect is proportional to the applied load, leading to vertical strain values (opposite to the applied force) of up to 150%. The effect is null in the absence of shear, increases with tip velocity, and is anisotropic. It also has similar magnitudes in these solid lubricant materials (few-layer graphene, h-BN, and MoS(2)), but it is absent in single-layer graphene and in few-layer mica and Bi(2)Se(3). We propose a physical mechanism for the effect where the combined compressive and shear stresses from the tip induce dynamical wrinkling on the upper material layers, leading to the observed flake thickening. The new effect (and, therefore, the proposed wrinkling) is reversible in the three materials where it is observed. PMID:22468807

  18. Selective nano-patterning of graphene using a heated atomic force microscope tip

    International Nuclear Information System (INIS)

    In this study, we introduce a selective thermochemical nano-patterning method of graphene on insulating substrates. A tiny heater formed at the end of an atomic force microscope (AFM) cantilever is optimized by a finite element method. The cantilever device is fabricated using conventional micromachining processes. After preliminary tests of the cantilever device, nano-patterning experiments are conducted with various conducting and insulating samples. The results indicate that faster scanning speed and higher contact force are desirable to reduce the sizes of nano-patterns. With the experimental condition of 1 μm/s and 24 mW, the heated AFM tip generates a graphene oxide layer of 3.6 nm height and 363 nm width, on a 300 nm thick SiO2 layer, with a tip contact force of 100 nN

  19. Selective nano-patterning of graphene using a heated atomic force microscope tip

    Science.gov (United States)

    Choi, Young-Soo; Wu, Xuan; Lee, Dong-Weon

    2014-04-01

    In this study, we introduce a selective thermochemical nano-patterning method of graphene on insulating substrates. A tiny heater formed at the end of an atomic force microscope (AFM) cantilever is optimized by a finite element method. The cantilever device is fabricated using conventional micromachining processes. After preliminary tests of the cantilever device, nano-patterning experiments are conducted with various conducting and insulating samples. The results indicate that faster scanning speed and higher contact force are desirable to reduce the sizes of nano-patterns. With the experimental condition of 1 μm/s and 24 mW, the heated AFM tip generates a graphene oxide layer of 3.6 nm height and 363 nm width, on a 300 nm thick SiO2 layer, with a tip contact force of 100 nN.

  20. Nanomechanical mapping of graphene layers and interfaces in suspended graphene nanostructures grown via carbon diffusion

    International Nuclear Information System (INIS)

    Graphene's remarkable mechanical, electronic and thermal properties are strongly determined by both the mechanism of its growth and its interaction with the underlying substrate. Evidently, in order to explore the fundamentals of these mechanisms, efficient nanoscale methods that enable observation of features hidden underneath the immediate surface are needed. In this paper we use nanomechanical mapping via ultrasonic force microscopy that employs MHz frequency range ultrasonic vibrations and allows the observation of surface composition and subsurface interfaces with nanoscale resolution, to elucidate the morphology of few layer graphene (FLG) films produced via a recently reported method of carbon diffusion growth (CDG) on platinum-metal based substrate. CDG is known to result in FLG suspended over large areas, which could be of high importance for graphene transfer and applications where a standalone graphene film is required. This study directly reveals the detailed mechanism of CDG three-dimensional growth and FLG film detachment, directly linking the level of graphene decoupling with variations of the substrate temperature during the annealing phase of growth. We also show that graphene initially and preferentially decouples at the substrate grain boundaries, likely due to its negative expansion coefficient at cooling, forming characteristic “nano-domes” at the intersections of the grain boundaries. Furthermore, quantitative nanomechanical mapping of flexural stiffness of suspended FLG “nano-domes” using kHz frequency range force modulation microscopy uncovers the progression of “nano-dome” stiffness from single to bi-modal distribution as CDG growth progresses, suggesting growth instability at advanced CDG stages. - Highlights: • Exploring growth and film-substrate decoupling in carbon diffusion grown graphene • Nanomechanical mapping of few layer graphene and graphene–substrate interfaces • Quantitative stiffness mapping of

  1. Tribological characteristics of few-layer graphene over Ni grain and interface boundaries

    Science.gov (United States)

    Tripathi, Manoj; Awaja, Firas; Paolicelli, Guido; Bartali, Ruben; Iacob, Erica; Valeri, Sergio; Ryu, Seunghwa; Signetti, Stefano; Speranza, Giorgio; Pugno, Nicola Maria

    2016-03-01

    The tribological properties of metal-supported few-layered graphene depend strongly on the grain topology of the metal substrate. Inhomogeneous distribution of graphene layers at such regions led to variable landscapes with distinguishable roughness. This discrepancy in morphology significantly affects the frictional and wetting characteristics of the FLG system. We discretely measured friction characteristics of FLG covering grains and interfacial grain boundaries of polycrystalline Ni metal substrate via an atomic force microscopy (AFM) probe. The friction coefficient of FLG covered at interfacial grain boundaries is found to be lower than that on grains in vacuum (at 10-5 Torr pressure) and similar results were obtained in air condition. Sliding history with AFM cantilever, static and dynamic pull-in and pull-off adhesion forces were addressed in the course of friction measurements to explain the role of the out-of-plane deformation of graphene layer(s). Finite element simulations showed good agreement with experiments and led to a rationalization of the observations. Thus, with interfacial grain boundaries the FLG tribology can be effectively tuned.The tribological properties of metal-supported few-layered graphene depend strongly on the grain topology of the metal substrate. Inhomogeneous distribution of graphene layers at such regions led to variable landscapes with distinguishable roughness. This discrepancy in morphology significantly affects the frictional and wetting characteristics of the FLG system. We discretely measured friction characteristics of FLG covering grains and interfacial grain boundaries of polycrystalline Ni metal substrate via an atomic force microscopy (AFM) probe. The friction coefficient of FLG covered at interfacial grain boundaries is found to be lower than that on grains in vacuum (at 10-5 Torr pressure) and similar results were obtained in air condition. Sliding history with AFM cantilever, static and dynamic pull-in and pull

  2. Topological properties of artificial graphene assembled by atom manipulation

    Science.gov (United States)

    Ko, Wonhee; Mar, Warren; Gomes, Kenjiro K.; Manoharan, Hari C.

    2011-03-01

    Graphene exhibits special electronic properties stemming from its two-dimensional (2D) structure and embedded relativistic Dirac cones. However, many proposed topologically ordered ground states remain elusive in conventional measurements due to the difficulty in arranging the necessary quantum textures into natural graphene. By exploiting atomic manipulation with a custom-built ultrastable scanning tunneling microscope, we have constructed graphene-like structures by arranging molecules to create a honeycomb lattice of electrons drawn from normal 2D surface states. Spectroscopy reveals a spectacular transformation of nonrelativistic massive 2D electrons into massless Dirac fermions carrying a chiral pseudospin symmetry. We demonstrate the tailoring of this new class of graphene to reveal signature topological properties: an energy gap and emergent mass created by breaking the pseudospin symmetry or changing the hopping term non-uniformly with a Kekulé bond distortion; gauge fields generated by applying atomically engineered strains; and the condensation of electrons into quantum Hall-like states and topologically confined phases. Supported by the DOE, Office of Basic Energy Sciences, Division of Material Science and Engineering under contract DE-AC02-76SF00515.

  3. Thermal Casimir-Polder interaction of different atoms with graphene

    CERN Document Server

    Chaichian, M; Mostepanenko, V M; Tureanu, A

    2012-01-01

    The thermal correction to the energy of Casimir-Polder interaction of atoms with a suspended graphene membrane described by the Dirac model is investigated. We show that a major impact on the thermal correction is made by the size of the gap in the energy spectrum of graphene quasiparticles. Specifically, if the temperature is much smaller than the gap parameter (alternatively, larger or of the order of the gap parameter), the thermal correction is shown to be relatively small (alternatively, large). We have calculated the free energy of the thermal Casimir-Polder interaction of atoms of He, Na, Rb, and Cs with graphene described by both the hydrodynamic and Dirac models. It is shown that in exact computations using the Dirac model, one should use the polarization operator at nonzero temperature. The computational results for the Casimir-Polder free energy obtained in the framework of hydrodynamic model of graphene are several times larger than in the Dirac model within the separation region below 2$\\mu$m. We...

  4. Interfacial effect on the electrochemical properties of the layered graphene/metal sulfide composites as anode materials for Li-ion batteries

    Science.gov (United States)

    Lv, Yagang; Chen, Biao; Zhao, Naiqin; Shi, Chunsheng; He, Chunnian; Li, Jiajun; Liu, Enzuo

    2016-09-01

    The layered graphene/metal sulfide composites exhibit excellent electrochemical properties as anode materials for lithium ion battery, due to the synergistic effect between metal sulfide and graphene which still needs to be further understood. In this study, Li adsorption and diffusion on MoS2 and SnS2 monolayers and Li2S surface, as well as at their interfaces with graphene, are systematically investigated through first-principles calculations. The analysis of charge density difference, Bader charge, and density of states indicates that the adsorbed Li atoms interact with both the S atoms at metal sulfide surfaces and C atoms in graphene, resulting in larger Li adsorption energies at the interfaces compared with that on the corresponding surfaces, but with almost no enhancement of the energy barriers for Li atom diffusion. The enhanced Li adsorption capability at Li2S/G interface contributes to the extra storage capacity of graphene/metal sulfide composites. Furthermore, the synergistic mechanism between metal sulfide and graphene is revealed. Moreover, band structure analysis shows the electronic conductivity is enhanced with the incorporation of graphene. The results corroborate the interfacial pseudocapacity-like Li atom storage mechanism, and are helpful for the design of layered graphene/metal sulfide composites as anode materials for lithium ion batteries.

  5. Electron tunneling in single layer graphene with an energy gap

    Institute of Scientific and Technical Information of China (English)

    Xu Xu-Guang; Zhang Chao; Xu Gong-Jie; Cao Jun-Cheng

    2011-01-01

    When a single layer graphene is epitaxially grown on silicon carbide, it will exhibit a finite energy gap like a conventional semiconductor, and its energy dispersion is no longer linear in momentum in the low energy regime. In this paper, we have investigated the tunneling characteristics through a two-dimensional barrier in a single layer graphene with an energy gap. It is found that when the electron is at a zero angle of incidence, the transmission probability as a function of incidence energy has a gap. Away from the gap the transmission coefficient oscillates with incidence energy which is analogous to that of a conventional semiconductor. The conductance under zero temperature has a gap. The properties of electron transmission may be useful for developing graphene-based nano-electronics.

  6. A graphene superficial layer for the advanced electroforming process

    Science.gov (United States)

    Rho, Hokyun; Park, Mina; Lee, Seungmin; Bae, Sukang; Kim, Tae-Wook; Ha, Jun-Seok; Lee, Sang Hyun

    2016-06-01

    Advances in electroplating technology facilitate the progress of modern electronic devices, including computers, microprocessors and other microelectronic devices. Metal layers with high electrical and thermal conductivities are essential for high speed and high power devices. In this paper, we report an effective route to fabricate free-standing metal films using graphene as a superficial layer in the electroforming process. Chemical vapor deposition (CVD) graphene grown on a Cu foil was used as a template, which provides high electrical conductivity and low adhesive force with the template, thus enabling an effective electroforming process. The required force for delamination of the electroplated Cu layer from graphene is more than one order smaller than the force required for removing graphene from the Cu foil. We also demonstrated that the electroformed free-standing Cu thin films could be utilized for patterning microstructures and incorporated onto a flexible substrate for LEDs. This innovative process could be beneficial for the advancement of flexible electronics and optoelectronics, which require a wide range of mechanical and physical properties.Advances in electroplating technology facilitate the progress of modern electronic devices, including computers, microprocessors and other microelectronic devices. Metal layers with high electrical and thermal conductivities are essential for high speed and high power devices. In this paper, we report an effective route to fabricate free-standing metal films using graphene as a superficial layer in the electroforming process. Chemical vapor deposition (CVD) graphene grown on a Cu foil was used as a template, which provides high electrical conductivity and low adhesive force with the template, thus enabling an effective electroforming process. The required force for delamination of the electroplated Cu layer from graphene is more than one order smaller than the force required for removing graphene from the Cu foil

  7. Raman spectroscopy of few-layer graphene prepared by C2–C6 cluster ion implantation

    International Nuclear Information System (INIS)

    Few-layer graphene has been prepared on 300 nm-thick Ni films by C2–C6 cluster ion implantation at 20 keV/cluster. Raman spectroscopy reveals significant influence of the number of atoms in the cluster, the implantation dose, and thermal treatment on the structure of the graphene layers. In particular, the graphene samples exhibit a sharp G peak at 1584 cm−1 and 2D peaks at 2711–2717 cm−1. The IG/I2D ratios higher than 1.70 and IG/ID ratio as high as 1.95 confirm that graphene sheets with low density of defects have been synthesized with much improved quality by ion implantation with larger clusters of C4–C6

  8. Infrared dynamics of cold atoms on hot graphene membranes

    Science.gov (United States)

    Sengupta, Sanghita; Kotov, Valeri N.; Clougherty, Dennis P.

    2016-06-01

    We study the infrared dynamics of low-energy atoms interacting with a sample of suspended graphene at finite temperature. The dynamics exhibits severe infrared divergences order by order in perturbation theory as a result of the singular nature of low-energy flexural phonon emission. Our model can be viewed as a two-channel generalization of the independent boson model with asymmetric atom-phonon coupling. This allows us to take advantage of the exact nonperturbative solution of the independent boson model in the stronger channel while treating the weaker one perturbatively. In the low-energy limit, the exact solution can be viewed as a resummation (exponentiation) of the most divergent diagrams in the perturbative expansion. As a result of this procedure, we obtain the atom's Green function which we use to calculate the atom damping rate, a quantity equal to the quantum sticking rate. A characteristic feature of our results is that the Green's function retains a weak, infrared cutoff dependence that reflects the reduced dimensionality of the problem. As a consequence, we predict a measurable dependence of the sticking rate on graphene sample size. We provide detailed predictions for the sticking rate of atomic hydrogen as a function of temperature and sample size. The resummation yields an enhanced sticking rate relative to the conventional Fermi golden rule result (equivalent to the one-loop atom self-energy), as higher-order processes increase damping at finite temperature.

  9. Mode dependent lattice thermal conductivity of single layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Zhiyong; Yang, Juekuan; Bi, Kedong; Chen, Yunfei, E-mail: yunfeichen@seu.edu.cn [Jiangsu Key Laboratory for Design and Manufacture of Micro/Nano Biomedical Instruments and School of Mechanical Engineering, Southeast University, Nanjing 210096 (China)

    2014-10-21

    Molecular dynamics simulation is performed to extract the phonon dispersion and phonon lifetime of single layer graphene. The mode dependent thermal conductivity is calculated from the phonon kinetic theory. The predicted thermal conductivity at room temperature exhibits important quantum effects due to the high Debye temperature of graphene. But the quantum effects are reduced significantly when the simulated temperature is as high as 1000 K. Our calculations show that out-of-plane modes contribute about 41.1% to the total thermal conductivity at room temperature. The relative contribution of out-of-plane modes has a little decrease with the increase of temperature. Contact with substrate can reduce both the total thermal conductivity of graphene and the relative contribution of out-of-plane modes, in agreement with previous experiments and theories. Increasing the coupling strength between graphene and substrate can further reduce the relative contribution of out-of-plane modes. The present investigations also show that the relative contribution of different mode phonons is not sensitive to the grain size of graphene. The obtained phonon relaxation time provides useful insight for understanding the phonon mean free path and the size effects in graphene.

  10. Graphene Plasmonics

    OpenAIRE

    García de Abajo, F. Javier; Koppens, Frank H. L.; Chang, Darrick E.; Thongrattanasiri, Sukosin

    2011-01-01

    Plasmons in doped graphene provide an ideal platform for strong light‐matter interaction, perfect light absorption in an atomically thin layer, and ultra‐large field enhancement, well beyond conventional plasmonics, and tunable through electrostatic doping.

  11. Temperature- and thickness-dependent electrical conductivity of few-layer graphene and graphene nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Xiao-Yong, E-mail: fang@ysu.edu.cn [School of Science, Yanshan University, Qinhuangdao 066004 (China); Yu, Xiao-Xia; Zheng, Hong-Mei [School of Science, Yanshan University, Qinhuangdao 066004 (China); Jin, Hai-Bo [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China); Wang, Li [School of Science, Yanshan University, Qinhuangdao 066004 (China); Cao, Mao-Sheng, E-mail: caomaosheng@bit.edu.cn [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China)

    2015-10-02

    We established a calculation model of the conductivity of multilayer graphene based on Boltzmann transport equation and 2D electron gas theory. Numerical simulations show that the conductivities of few-layer graphene and graphene nanosheets are reduced when thickness is increased. The reduction rate decreases for micron-range thicknesses and remains constant thereafter. Moreover, the conductivity increases with the increase in temperature, in which the increase rate declines as temperature increases. Higher thickness exhibits a more obvious temperature effect on conductivity. Such effect also increases with the increase in temperature. - Highlights: • Two types of carrier transport channels, surface channel and interlayer channel, were advised. • Electron scattering mechanism in the surface channel and interlayer channel were investigated. • The calculation model of the conductivity of multilayer graphene was established. • Temperature- and thickness-dependent conductivity of FLG and GNs was simulated. • Numerical simulation results are consistent with the published experimental results.

  12. Temperature- and thickness-dependent electrical conductivity of few-layer graphene and graphene nanosheets

    International Nuclear Information System (INIS)

    We established a calculation model of the conductivity of multilayer graphene based on Boltzmann transport equation and 2D electron gas theory. Numerical simulations show that the conductivities of few-layer graphene and graphene nanosheets are reduced when thickness is increased. The reduction rate decreases for micron-range thicknesses and remains constant thereafter. Moreover, the conductivity increases with the increase in temperature, in which the increase rate declines as temperature increases. Higher thickness exhibits a more obvious temperature effect on conductivity. Such effect also increases with the increase in temperature. - Highlights: • Two types of carrier transport channels, surface channel and interlayer channel, were advised. • Electron scattering mechanism in the surface channel and interlayer channel were investigated. • The calculation model of the conductivity of multilayer graphene was established. • Temperature- and thickness-dependent conductivity of FLG and GNs was simulated. • Numerical simulation results are consistent with the published experimental results

  13. Electronic properties of impurity-infected few-layer graphene nanoribbons

    International Nuclear Information System (INIS)

    Spurred by achievements in devising different multilayered graphene-based nano-systems, based on the random tight-binding Hamiltonian model and within the coherent potential approximation, the influence of varying the number of layers and the effect of doping by the boron and nitrogen impurities on the density of states of a mono- and few-layer armchair- and zigzag-edge graphene nanoribbons are theoretically investigated. When the nanoribbons are pristine, with increasing the number of layers the band gap of the armchair nanoribbons is decreased, yet the zigzag ribbons remain metallic and depending on the number of the layers few peaks are appeared around the zero-energy level. Moreover, in the presence of impurities, the band gap of the armchair nanoribbons is decreased for each number of layers. The Van-Hove singularities are steadily broadened and the density of states move to a higher (lower) value of the energy as a result of doping with boron (nitrogen) atoms. This study could provide with us to explore and devise new optoelectronic devices based on the impurity-infected graphene nanoribbons with tunable widths and edges

  14. Electronic properties of impurity-infected few-layer graphene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi, Hamze, E-mail: hamze.mousavi@gmail.com [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Nano Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Bagheri, Mehran [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Evin, Tehran 19835-63113 (Iran, Islamic Republic of)

    2015-02-01

    Spurred by achievements in devising different multilayered graphene-based nano-systems, based on the random tight-binding Hamiltonian model and within the coherent potential approximation, the influence of varying the number of layers and the effect of doping by the boron and nitrogen impurities on the density of states of a mono- and few-layer armchair- and zigzag-edge graphene nanoribbons are theoretically investigated. When the nanoribbons are pristine, with increasing the number of layers the band gap of the armchair nanoribbons is decreased, yet the zigzag ribbons remain metallic and depending on the number of the layers few peaks are appeared around the zero-energy level. Moreover, in the presence of impurities, the band gap of the armchair nanoribbons is decreased for each number of layers. The Van-Hove singularities are steadily broadened and the density of states move to a higher (lower) value of the energy as a result of doping with boron (nitrogen) atoms. This study could provide with us to explore and devise new optoelectronic devices based on the impurity-infected graphene nanoribbons with tunable widths and edges.

  15. To the Question about Migration of Impurity Atoms in Graphene

    Directory of Open Access Journals (Sweden)

    A.S. Dolgov

    2013-10-01

    Full Text Available The uncorrelated accidental jumps of the migration subjects from the allowed positions to the identical immediate ones in the two-dimensional hexagonal structure, which simulates the graphene nodes distribution, are considered. The impurity atoms are placed in the interstitial positions between two atoms of each hexagon sides. The offered system corresponds to the sufficiently high temperatures, where the elementary migration act represents the classical over-barrier jump whose probability is defined by the temperature. The exact solution of the unlimited set of the migration microscopic equations is written in the generating function technique and the corresponding microscopic characteristics are found. The anisotropy of the early migration stage can act as an instrument of the matrix state diagnosis and also the formation of the specified impurity geometric structures which are jointed with graphene. The diffusive spread rate, which is compared with the rate of the cellular migration spread, is found. The evolution features of the macroscopic distribution picture of the impurity component on the graphene lattice which are designated by the microscopic geometry impurity atoms displacement are discussed.

  16. Electron transport in molecular junctions with graphene as protecting layer

    International Nuclear Information System (INIS)

    We present ab initio transport calculations for molecular junctions that include graphene as a protecting layer between a single molecule and gold electrodes. This vertical setup has recently gained significant interest in experiment for the design of particularly stable and reproducible devices. We observe that the signals from the molecule in the electronic transmission are overlayed by the signatures of the graphene sheet, thus raising the need for a reinterpretation of the transmission. On the other hand, we see that our results are stable with respect to various defects in the graphene. For weakly physiosorbed molecules, no signs of interaction with the graphene are evident, so the transport properties are determined by offresonant tunnelling between the gold leads across an extended structure that includes the molecule itself and the additional graphene layer. Compared with pure gold electrodes, calculated conductances are about one order of magnitude lower due to the increased tunnelling distance. Relative differences upon changing the end group and the length of the molecule on the other hand, are similar

  17. Electron transport in molecular junctions with graphene as protecting layer

    Science.gov (United States)

    Hüser, Falco; Solomon, Gemma C.

    2015-12-01

    We present ab initio transport calculations for molecular junctions that include graphene as a protecting layer between a single molecule and gold electrodes. This vertical setup has recently gained significant interest in experiment for the design of particularly stable and reproducible devices. We observe that the signals from the molecule in the electronic transmission are overlayed by the signatures of the graphene sheet, thus raising the need for a reinterpretation of the transmission. On the other hand, we see that our results are stable with respect to various defects in the graphene. For weakly physiosorbed molecules, no signs of interaction with the graphene are evident, so the transport properties are determined by offresonant tunnelling between the gold leads across an extended structure that includes the molecule itself and the additional graphene layer. Compared with pure gold electrodes, calculated conductances are about one order of magnitude lower due to the increased tunnelling distance. Relative differences upon changing the end group and the length of the molecule on the other hand, are similar.

  18. Electron transport in molecular junctions with graphene as protecting layer

    Energy Technology Data Exchange (ETDEWEB)

    Hüser, Falco; Solomon, Gemma C., E-mail: gsolomon@nano.ku.dk [Nano-Science Center and Department of Chemistry, University of Copenhagen, 2100 København Ø (Denmark)

    2015-12-07

    We present ab initio transport calculations for molecular junctions that include graphene as a protecting layer between a single molecule and gold electrodes. This vertical setup has recently gained significant interest in experiment for the design of particularly stable and reproducible devices. We observe that the signals from the molecule in the electronic transmission are overlayed by the signatures of the graphene sheet, thus raising the need for a reinterpretation of the transmission. On the other hand, we see that our results are stable with respect to various defects in the graphene. For weakly physiosorbed molecules, no signs of interaction with the graphene are evident, so the transport properties are determined by offresonant tunnelling between the gold leads across an extended structure that includes the molecule itself and the additional graphene layer. Compared with pure gold electrodes, calculated conductances are about one order of magnitude lower due to the increased tunnelling distance. Relative differences upon changing the end group and the length of the molecule on the other hand, are similar.

  19. Precise Control of the Number of Layers of Graphene by Picosecond Laser Thinning

    Science.gov (United States)

    Lin, Zhe; Ye, Xiaohui; Han, Jinpeng; Chen, Qiao; Fan, Peixun; Zhang, Hongjun; Xie, Dan; Zhu, Hongwei; Zhong, Minlin

    2015-06-01

    The properties of graphene can vary as a function of the number of layers (NOL). Controlling the NOL in large area graphene is still challenging. In this work, we demonstrate a picosecond (ps) laser thinning removal of graphene layers from multi-layered graphene to obtain desired NOL when appropriate pulse threshold energy is adopted. The thinning process is conducted in atmosphere without any coating and it is applicable for graphene films on arbitrary substrates. This method provides many advantages such as one-step process, non-contact operation, substrate and environment-friendly, and patternable, which will enable its potential applications in the manufacturing of graphene-based electronic devices.

  20. Graphene crystal growth by thermal precipitation of focused ion beam induced deposition of carbon precursor via patterned-iron thin layers

    Directory of Open Access Journals (Sweden)

    Rius Gemma

    2014-01-01

    Full Text Available Recently, relevant advances on graphene as a building block of integrated circuits (ICs have been demonstrated. Graphene growth and device fabrication related processing has been steadily and intensively powered due to commercial interest; however, there are many challenges associated with the incorporation of graphene into commercial applications which includes challenges associated with the synthesis of this material. Specifically, the controlled deposition of single layer large single crystal graphene on arbitrary supports, is particularly challenging. Previously, we have reported the first demonstration of the transformation of focused ion beam induced deposition of carbon (FIBID-C into patterned graphitic layers by metal-assisted thermal treatment (Ni foils. In this present work, we continue exploiting the FIBID-C approach as a route for graphene deposition. Here, thin patterned Fe layers are used for the catalysis of graphenization and graphitization. We demonstrate the formation of high quality single and few layer graphene, which evidences, the possibility of using Fe as a catalyst for graphene deposition. The mechanism is understood as the minute precipitation of atomic carbon after supersaturation of some iron carbides formed under a high temperature treatment. As a consequence of the complete wetting of FIBID-C and patterned Fe layers, which enable graphene growth, the as-deposited patterns do not preserve their original shape after the thermal treatment

  1. Atomic layer deposition of nanoporous biomaterials.

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, R. J.; Adiga, S. P.; Pellin, M. J.; Curtiss, L. A.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N. A.; Brigmon, R. L.; Elam, J. W.; Univ. of North Carolina; North Carolina State Univ.; Eastman Kodak Co.; North Dakota State Univ.; SRL

    2010-03-01

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials. Nanoporous alumina, also known as anodic aluminum oxide (AAO), is a nanomaterial that exhibits several unusual properties, including high pore densities, straight pores, small pore sizes, and uniform pore sizes. In 1953, Keller et al. showed that anodizing aluminum in acid electrolytes results in a thick layer of nearly cylindrical pores, which are arranged in a close-packed hexagonal cell structure. More recently, Matsuda & Fukuda demonstrated preparation of highly ordered platinum and gold nanohole arrays using a replication process. In this study, a negative structure of nanoporous alumina was initially fabricated and a positive structure of a nanoporous metal was subsequently fabricated. Over the past fifteen years, nanoporous alumina membranes have been used as templates for growth of a variety of nanostructured materials, including nanotubes, nanowires, nanorods, and nanoporous membranes.

  2. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Science.gov (United States)

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and Gʹ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  3. Current-Phase Measurements in Single Layer Graphene

    Science.gov (United States)

    Chialvo, Cesar; Moraru, Ion; Bahr, Daniel; Mason, Nadya; van Harlingen, Dale

    2009-03-01

    The current-phase relationship (CPR) of a Josephson junction can provide key information about the microscopic processes that make up a supercurrent. However, CPR has not been previously measured in graphene. We have successfully fabricated a variety of Josephson junctions containing single-layer graphene as a weak link, and with different junction width to length ratios. We present results of measurements based on a phase-sensitive SQUID technique, where we determine the supercurrent amplitude and phase, as well as a possibly anomalous shape of the CPR.

  4. Development of the layer-by-layer biosensor using graphene films: application for cholesterol determination

    International Nuclear Information System (INIS)

    The preparation and characterization of graphene films for cholesterol determination are described. The graphene films were synthesized by thermal chemical vapor deposition (CVD) method. Methane gas (CH4) and copper tape were used as carbon source and catalyst in the graphene growth process, respectively. The intergrated array was fabricated by using micro-electro-mechanical systems (MEMS) technology in which Fe3O4-doped polyaniline (PANi) film was electropolymerized on Pt/Gr electrodes. The properties of the Pt/Gr/PANi/Fe3O4 films were investigated by field-emission scanning electron microscopy (FE-SEM), Raman spectroscopy and electrochemical techniques. Cholesterol oxidase (ChOx) has been immobilized onto the working electrode with glutaraldehyde agent. The cholesterol electrochemical biosensor shows high sensitivity (74 μA mM−1 cm−2) and fast response time (2) of 0.9986. This new layer-by-layer biosensor based on graphene films promises many practical applications. (paper)

  5. Manipulating absorption and diffusion of H atom on graphene by mechanical strain

    OpenAIRE

    Ming Yang; Argo Nurbawono; Chun Zhang; Rongqin Wu; Yuanping Feng; Ariando

    2011-01-01

    Effects of the tensile strain on absorption and diffusion of hydrogen atoms on graphene have been studied by first-principles calculations. Our calculations suggested that there exists a barrier of 0.22 eV for H atom to diffuse from free space to graphene. The barrier originates from the transition of the hybridization of the H-binded carbon atom in graphene from sp2 to sp3, and is robust against the tensile strain. It was also found that, first, the in-plane diffusion of H atoms on graphene ...

  6. Fabrication of graphene thin films based on layer-by-layer self-assembly of functionalized graphene nanosheets.

    Science.gov (United States)

    Park, Je Seob; Cho, Sung Min; Kim, Woo-Jae; Park, Juhyun; Yoo, Pil J

    2011-02-01

    In this study, we present a facile means of fabricating graphene thin films via layer-by-layer (LbL) assembly of charged graphene nanosheets (GS) based on electrostatic interactions. To this end, graphite oxide (GO) obtained from graphite powder using Hummers method is chemically reduced to carboxylic acid-functionalized GS and amine-functionalized GS to perform an alternate LbL deposition between oppositely charged GSs. Specifically, for successful preparation of positively charged GS, GOs are treated with an intermediate acyl-chlorination reaction by thionyl chloride and a subsequent amidation reaction in pyridine, whereby a stable GO dispersibility can be maintained within the polar reaction solvent. As a result, without the aid of additional hybridization with charged nanomaterials or polyelectrolytes, the oppositely charged graphene nanosheets can be electrostatically assembled to form graphene thin films in an aqueous environment, while obtaining controllability over film thickness and transparency. Finally, the electrical property of the assembled graphene thin films can be enhanced through a thermal treatment process. Notably, the introduction of chloride functions during the acyl-chlorination reaction provides the p-doping effect for the assembled graphene thin films, yielding a sheet resistance of 1.4 kΩ/sq with a light transmittance of 80% after thermal treatment. Since the proposed method allows for large-scale production as well as elaborate manipulation of the physical properties of the graphene thin films, it can be potentially utilized in various applications, such as transparent electrodes, flexible displays and highly sensitive biosensors. PMID:21207942

  7. A graphene superficial layer for the advanced electroforming process.

    Science.gov (United States)

    Rho, Hokyun; Park, Mina; Lee, Seungmin; Bae, Sukang; Kim, Tae-Wook; Ha, Jun-Seok; Lee, Sang Hyun

    2016-07-01

    Advances in electroplating technology facilitate the progress of modern electronic devices, including computers, microprocessors and other microelectronic devices. Metal layers with high electrical and thermal conductivities are essential for high speed and high power devices. In this paper, we report an effective route to fabricate free-standing metal films using graphene as a superficial layer in the electroforming process. Chemical vapor deposition (CVD) graphene grown on a Cu foil was used as a template, which provides high electrical conductivity and low adhesive force with the template, thus enabling an effective electroforming process. The required force for delamination of the electroplated Cu layer from graphene is more than one order smaller than the force required for removing graphene from the Cu foil. We also demonstrated that the electroformed free-standing Cu thin films could be utilized for patterning microstructures and incorporated onto a flexible substrate for LEDs. This innovative process could be beneficial for the advancement of flexible electronics and optoelectronics, which require a wide range of mechanical and physical properties. PMID:26949072

  8. Spatial atomic layer deposition: a route towards further industrialization of atomic layer deposition

    NARCIS (Netherlands)

    Poodt, P.W.G.; Cameron, D.C.; Dickey, E.; George, S.M.; Kuznetsov, V.; Parsons, G.N.; Roozeboom, F.; Sundaram, G.; Vermeer, A.

    2012-01-01

    Atomic layer deposition (ALD) is a technique capable of producing ultrathin conformal films with atomic level control over thickness. A major drawback of ALD is its low deposition rate, making ALD less attractive for applications that require high throughput processing. An approach to overcome this

  9. Atomic Scale Imaging of the Electronic Structure and Chemistry of Graphene and Its Precursors on Metal Surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Flynn, George W [Columbia University

    2015-02-16

    atom, provides information about the electronic structure of graphene and is particularly sensitive to the sign and magnitude of the charge transfer between graphene and any surface adsorbed species. Results: (A) Graphene on SiO2 In an effort designed to unravel aspects of the mechanisms for chemistry on graphene surfaces, STM and STS were employed to show that graphene on SiO2 is oxidized at lower temperatures than either graphite or multi-layer graphene. Two independent factors control this charge transfer: (1) the degree of graphene coupling to the substrate, and (2) exposure to oxygen and moisture. (B) Graphene on Copper In the case of graphene grown on copper surfaces, we found that the graphene grows primarily in registry with the underlying copper lattice for both Cu(111) and Cu(100). On Cu(111) the graphene has a hexagonal superstructure with a significant electronic component, whereas it has a linear superstructure on Cu(100). (C) Nitrogen Doped Graphene on Copper Using STM we have also studied the electronic structure and morphology of graphene films grown on a copper foil substrate in which N atoms substitute for carbon in the 2-D graphene lattice. The salient features of the results of this study were: (1) Nitrogen doped graphene on Cu foil exhibits a triangular structure with an “apparent” slight elevation of ~ 0.8 Å at N atom substitution sites; (2) Nitrogen doping results in ~0.4 electrons per N atom donated to the graphene lattice; (3) Typical N doping of graphene on Cu foil shows mostly single site Carbon atom displacement (~ 3N/1000C); (4) Some multi-site C atom displacement is observed (<10% of single site events). (D) Boron Doped Graphene on Copper We also used scanning tunneling microscopy and x-ray spectroscopy to characterize the atomic and electronic structure of boron-doped graphene created by chemical vapor deposition on copper substrates. Microscopic measurements show that boron, like nitrogen, incorporates into the carbon lattice

  10. Thermal Transport in Graphene, Few-Layer Graphene and Graphene Nanoribbons

    OpenAIRE

    Denis L. Nika; Balandin, Alexander A.

    2016-01-01

    The discovery of unusual heat conduction properties of graphene has led to a surge of theoretical and experimental studies of phonon transport in two-dimensional material systems. The rapidly developing graphene thermal field spans from theoretical physics to practical engineering applications. In this invited review we outline different theoretical approaches developed for describing phonon transport in graphene and provide comparison with available experimental thermal conductivity data. A ...

  11. Angular Distribution of Electrons in Photoionization of Atoms Adsorbed on a Graphene Sheet

    CERN Document Server

    Baltenkov, A S

    2013-01-01

    Within the framework of a model representing the potential of a graphene sheet U(z) as an electro-neutral layer formed by smeared carbon atoms, the effect of this potential on spectral characteristics of atoms adsorbed on a graphene sheet has been studied. Since the distance between the adsorbed atom nucleus and sheet surface significantly exceeds the radii of inner atomic shells the potential U(z) makes influence on the continuum wave functions only. Their behavior in the upper semi-space (z>0) and in the lower one (z<0) where the adsorbed atom is located is defined by a jump of the logarithmic derivative of the wave function for z=0. The photoelectron angular distributions have been calculated for different mutual positions of the polarization vector e and the axis Z normal to the sheet surface. It has been shown that the existence of the electron waves reflected from the potential U(z) leads to evident asymmetry of the angular distribution relative to the plane z=0. The experimental observation of this ...

  12. Tribological characteristics of few-layer graphene over Ni grain and interface boundaries.

    Science.gov (United States)

    Tripathi, Manoj; Awaja, Firas; Paolicelli, Guido; Bartali, Ruben; Iacob, Erica; Valeri, Sergio; Ryu, Seunghwa; Signetti, Stefano; Speranza, Giorgio; Pugno, Nicola Maria

    2016-03-17

    The tribological properties of metal-supported few-layered graphene depend strongly on the grain topology of the metal substrate. Inhomogeneous distribution of graphene layers at such regions led to variable landscapes with distinguishable roughness. This discrepancy in morphology significantly affects the frictional and wetting characteristics of the FLG system. We discretely measured friction characteristics of FLG covering grains and interfacial grain boundaries of polycrystalline Ni metal substrate via an atomic force microscopy (AFM) probe. The friction coefficient of FLG covered at interfacial grain boundaries is found to be lower than that on grains in vacuum (at 10(-5) Torr pressure) and similar results were obtained in air condition. Sliding history with AFM cantilever, static and dynamic pull-in and pull-off adhesion forces were addressed in the course of friction measurements to explain the role of the out-of-plane deformation of graphene layer(s). Finite element simulations showed good agreement with experiments and led to a rationalization of the observations. Thus, with interfacial grain boundaries the FLG tribology can be effectively tuned. PMID:26948836

  13. Quantum confined electronic states in atomically well-defined graphene nanostructures

    OpenAIRE

    Hämäläinen, Sampsa; Sun, Zhixiang; Boneschanscher, Mark P.; Uppstu, Andreas; Ijäs, Mari; Harju, Ari; Vanmaekelbergh, Daniël; Liljeroth, Peter

    2011-01-01

    Despite the enormous interest in the properties of graphene and the potential of graphene nanostructures in electronic applications, the study of quantum confined states in atomically well-defined graphene nanostructures remains an experimental challenge. Here, we study graphene quantum dots (GQDs) with well-defined edges in the zigzag direction, grown by chemical vapor deposition (CVD) on an iridium(111) substrate, by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS)...

  14. Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis

    International Nuclear Information System (INIS)

    The two-dimensional material graphene shows its extraordinary potential in many application fields. As the most effective method to synthesize large-area monolayer graphene, chemical vapor deposition has been well developed; however, it still faces the challenge of a high occurrence of multilayer graphene, which causes the small effective area of monolayer graphene. This phenomenon limits its applications in which only a big size of monolayer graphene is needed. In this paper, by introducing a redistribution stage after the decomposition of carbon source gas to redistribute the carbon atoms dissolved in Pt foils, the number of multilayer flakes on the monolayer graphene decreases. The mean area of monolayer graphene can be extended to about 16 000 μm2, which is eight times larger than that of the graphene grown without the redistribution stage. A Raman spectrograph is used to demonstrate the high quality of the monolayer graphene grown by the improved process. (semiconductor materials)

  15. Drastic Minimization in the van der Waals Interaction with the Bottom Epitaxial Graphene Layer by the Diels-Alder Surface Chemistry of the Top Graphene Layer

    OpenAIRE

    Sarkar, Santanu

    2014-01-01

    The Diels-Alder surface modified top epitaxial graphene layer, with newly created pair of sp3 carbon centres, results in abrupt minimization of interlayer van der Waals interactions between two stacked graphene planes, and escapes the wafer during post-reaction manipulation stage, leaving the layer under it almost pristine-like. Above picture shows Diels-Alder functionalized sp2/sp3 graphene adduct leaves the parent wafer. In this communication we systematically address several fundamental qu...

  16. Effect of the intra-layer potential distributions and spatial currents on the performance of graphene SymFETs

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Mehdi; Sensale-Rodriguez, Berardi, E-mail: berardi.sensale@utah.edu [Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-09-15

    In this paper, a two-dimensional (2-D) model for a graphene symmetric field effect transistor (SymFET), which considers (a) the intra-graphene layer potential distributions and (b) the internal current flows through the device, is presented and discussed. The local voltages along the graphene electrodes as well as the current-voltage characteristics of the device are numerically calculated based on a single-particle tunneling model. Our numerical results show that: (i) when the tunneling current is small, due to either a large tunneling thickness (≥ 2 atomic layers of BN) or a small coherence length, the voltage distributions along the graphene electrodes have almost zero variations upon including these distributed effects, (ii) when the tunnel current is large, due to either a small tunneling thickness (∼ 1 atomic layer of BN) or due to a large coherence length, the local voltage distributions along the graphene electrodes become appreciable and the device behavior deviates from that predicted by a 1-D approximation. These effects, which are not captured in one-dimensional SymFET models, can provide a better understanding about the electron dynamics in the device and might indicate potential novel applications for this proposed device.

  17. Single-Layer Graphene as a Barrier Layer for Intense UV Laser-Induced Damages for Silver Nanowire Network.

    Science.gov (United States)

    Das, Suprem R; Nian, Qiong; Saei, Mojib; Jin, Shengyu; Back, Doosan; Kumar, Prashant; Janes, David B; Alam, Muhammad A; Cheng, Gary J

    2015-11-24

    Single-layer graphene (SLG) has been proposed as the thinnest protective/barrier layer for wide applications involving resistance to oxidation, corrosion, atomic/molecular diffusion, electromagnetic interference, and bacterial contamination. Functional metallic nanostructures have lower thermal stability than their bulk forms and are therefore susceptible to high energy photons. Here, we demonstrate that SLG can shield metallic nanostructures from intense laser radiation that would otherwise ablate them. By irradiation via a UV laser beam with nanosecond pulse width and a range of laser intensities (in millions of watt per cm(2)) onto a silver nanowire network, and conformally wrapping SLG on top of the nanowire network, we demonstrate that graphene "extracts and spreads" most of the thermal energy away from nanowire, thereby keeping it damage-free. Without graphene wrapping, the radiation would fragment the wires into smaller pieces and even decompose them into droplets. A systematic molecular dynamics simulation confirms the mechanism of SLG shielding. Consequently, particular damage-free and ablation-free laser-based nanomanufacturing of hybrid nanostructures might be sparked off by application of SLG on functional surfaces and nanofeatures. PMID:26447828

  18. Plasmons in spatially separated double-layer graphene nanoribbons

    Science.gov (United States)

    Bagheri, Mehran; Bahrami, Mousa

    2014-05-01

    Motivated by innovative progresses in designing multi-layer graphene nanostructured materials in the laboratory, we theoretically investigate the Dirac plasmon modes of a spatially separated double-layer graphene nanoribbon system, made up of a vertically offset armchair and metallic graphene nanoribbon pair. We find striking features of the collective excitations in this novel Coulomb correlated system, where both nanoribbons are supposed to be either intrinsic (undoped/ungated) or extrinsic (doped/gated). In the former, it is shown the low-energy acoustical and the high-energy optical plasmon modes are tunable only by the inter-ribbon charge separation. In the later, the aforementioned plasmon branches are modified by the added doping factor. As a result, our model could be useful to examine the existence of a linear Landau-undamped low-energy acoustical plasmon mode tuned via the inter-ribbon charge separation as well as doping. This study might also be utilized for devising novel quantum optical waveguides based on the Coulomb coupled graphene nanoribbons.

  19. Fabrication of patterned flexible graphene devices via facile direct transfer of as-grown bi-layer graphene

    International Nuclear Information System (INIS)

    Highlights: • Patterned bi-layer graphene was directly transferred onto various polymer substrates by using micro-contact printing technique. • Coating of dimethylformamide onto the polydimethylsiloxane (PDMS) stamp enhanced the adhesion between the bi-layer graphene and the PDMS stamp. • Patterned graphene devices showed mechanically stable electrical properties upon repeated bending cycles. - Abstract: We report on the fabrication of patterned flexible graphene devices via a facile direct transfer of bi-layer graphene grown on alumina (Al2O3) substrate, and the use of Ag nanowire stickers as flexible electrodes. Patterned polydimethylsiloxane (PDMS) stamps coated with vaporized dimethylformamide (DMF) are utilized to transfer as-grown graphene directly onto a flexible polyethylene terephthalate (PET) substrate. The facile direct transfer is attributed to the enhanced adhesion of the bi-layer graphene to PDMS, due to DMF-coating, as well as the weak adhesion between the bi-layer graphene and the Al2O3 substrate. In this way, flexible patterned graphene devices have been fabricated with Ag nanowire stickers as electrodes. Stable electrical conduction characteristics were measured over repetitive bending with a bending radius down to 5 mm

  20. Fabrication of patterned flexible graphene devices via facile direct transfer of as-grown bi-layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Park, Heun; Kim, Kyung Hoon; Yoon, Jangyeol [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Kim, Kuk Ki; Park, Seung Min [Department of Chemistry, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Ha, Jeong Sook, E-mail: jeongsha@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701 (Korea, Republic of)

    2015-02-15

    Highlights: • Patterned bi-layer graphene was directly transferred onto various polymer substrates by using micro-contact printing technique. • Coating of dimethylformamide onto the polydimethylsiloxane (PDMS) stamp enhanced the adhesion between the bi-layer graphene and the PDMS stamp. • Patterned graphene devices showed mechanically stable electrical properties upon repeated bending cycles. - Abstract: We report on the fabrication of patterned flexible graphene devices via a facile direct transfer of bi-layer graphene grown on alumina (Al{sub 2}O{sub 3}) substrate, and the use of Ag nanowire stickers as flexible electrodes. Patterned polydimethylsiloxane (PDMS) stamps coated with vaporized dimethylformamide (DMF) are utilized to transfer as-grown graphene directly onto a flexible polyethylene terephthalate (PET) substrate. The facile direct transfer is attributed to the enhanced adhesion of the bi-layer graphene to PDMS, due to DMF-coating, as well as the weak adhesion between the bi-layer graphene and the Al{sub 2}O{sub 3} substrate. In this way, flexible patterned graphene devices have been fabricated with Ag nanowire stickers as electrodes. Stable electrical conduction characteristics were measured over repetitive bending with a bending radius down to 5 mm.

  1. Touch stimulated pulse generation in biomimetic single-layer graphene

    Science.gov (United States)

    Sul, Onejae; Chun, Hyunsuk; Choi, Eunseok; Choi, Jungbong; Cho, Kyeongwon; Jang, Dongpyo; Chun, Sungwoo; Park, Wanjun; Lee, Seung-Beck

    2016-02-01

    Detecting variation in contact pressure is a separate sensing mode in the human somatosensory system that differs from the detection of pressure magnitude. If pressure magnitude and variation sensing can be achieved simultaneously, an advanced biomimetic tactile system that better emulates human senses may be developed. We report on a novel single-layer graphene based artificial mechanoreceptor that generates a resistance pulse as the contact stimulus passes a specific threshold pressure, mimicking the generation of action potentials in a biological fast-adapting mechanoreceptor. The electric field from a flexible membrane gate electrode placed above a graphene channel raises the Fermi level from the valence band as pressure deflects the membrane. The threshold pressure is reached when the Fermi level crosses the Dirac point in the graphene energy band, which generates a sharp peak in the measured resistance. We found that by changing the gate potential it was possible to modulate the threshold pressure and using a series of graphene channels, a train of pulses were generated during a transient pressurizing stimulus demonstrating biomimetic behaviour.Detecting variation in contact pressure is a separate sensing mode in the human somatosensory system that differs from the detection of pressure magnitude. If pressure magnitude and variation sensing can be achieved simultaneously, an advanced biomimetic tactile system that better emulates human senses may be developed. We report on a novel single-layer graphene based artificial mechanoreceptor that generates a resistance pulse as the contact stimulus passes a specific threshold pressure, mimicking the generation of action potentials in a biological fast-adapting mechanoreceptor. The electric field from a flexible membrane gate electrode placed above a graphene channel raises the Fermi level from the valence band as pressure deflects the membrane. The threshold pressure is reached when the Fermi level crosses the Dirac

  2. Graphene: a perfect nanoballoon

    OpenAIRE

    Leenaerts, O.; Partoens, B.; Peeters, F. M.

    2008-01-01

    We have performed a first-principles density functional theory investigation of the penetration of helium atoms through a graphene monolayer with defects. The relaxation of the graphene layer caused by the incoming helium atoms does not have a strong influence on the height of the energy barriers for penetration. For defective graphene layers, the penetration barriers decrease exponentially with the size of the defects but they are still sufficiently high that very large defects are needed to...

  3. Tunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms.

    Science.gov (United States)

    Zhang, Jia; Zhao, Chao; Liu, Na; Zhang, Huanxi; Liu, Jingjing; Fu, Yong Qing; Guo, Bin; Wang, Zhenlong; Lei, Shengbin; Hu, PingAn

    2016-01-01

    Single-layer and mono-component doped graphene is a crucial platform for a better understanding of the relationship between its intrinsic electronic properties and atomic bonding configurations. Large-scale doped graphene films dominated with graphitic nitrogen (GG) or pyrrolic nitrogen (PG) were synthesized on Cu foils via a free radical reaction at growth temperatures of 230-300 °C and 400-600 °C, respectively. The bonding configurations of N atoms in the graphene lattices were controlled through reaction temperature, and characterized using Raman spectroscopy, X-ray photoelectron spectroscopy and scanning tunneling microscope. The GG exhibited a strong n-type doping behavior, whereas the PG showed a weak n-type doping behavior. Electron mobilities of the GG and PG were in the range of 80.1-340 cm(2) V(-1)·s(-1) and 59.3-160.6 cm(2) V(-1)·s(-1), respectively. The enhanced doping effect caused by graphitic nitrogen in the GG produced an asymmetry electron-hole transport characteristic, indicating that the long-range scattering (ionized impurities) plays an important role in determining the carrier transport behavior. Analysis of temperature dependent conductance showed that the carrier transport mechanism in the GG was thermal excitation, whereas that in the PG, was a combination of thermal excitation and variable range hopping. PMID:27325386

  4. One-Pot Microwave-Assisted Synthesis of Graphene/Layered Double Hydroxide (LDH) Nanohybrids

    Institute of Scientific and Technical Information of China (English)

    Sunil P Lonkar; Jean-Marie Raquez; Philippe Dubois

    2015-01-01

    A facile and rapid method to synthesize graphene/layered double hydroxide (LDH) nanohybrids by a micro-wave technique is demonstrated. The synthesis procedure involves hydrothermal crystallization of Zn–Al LDH at the same time in situ reduction of graphene oxide (GO) to graphene. The microstructure, composition, and morphology of the resulting graphene/LDH nanohybrids were characterized. The results confirmed the formation of nanohybrids and the reduction of graphene oxide. The growth mechanism of LDH and in situ reduction of GO were discussed. The LDH sheet growth was found to prevent the scrolling of graphene layers in resulting hybrids. The electrochemical properties exhibit superior performance for graphene/Zn–Al LDH hybrids over pristine graphene. The present approach may open a strategy in hybridizing graphene with multimetallic nano-oxides and hydroxides using microwave method.

  5. Role of barrier layer on dielectric function of graphene double layer system at finite temperature

    Science.gov (United States)

    Patel, Digish K.; Ambavale, Sagar K.; Prajapati, Ketan; Sharma, A. C.

    2016-05-01

    We have theoretically investigated the static dielectric function of graphene double layer system (GDLS) at finite temperatures within the random phase approximation. GDLS has been suspended on a substrate and barrier layer of three different materials; h-BN, Al2O3 and HfO2 has been introduced between two graphene sheets of GDLS. We have reported dependence of the overall dielectric function of GDLS on interlayer distance and the effect of the dielectric environment at finite temperatures. Results show close relation between changing environment and behavior of dielectric constant of GDLS.

  6. Low-energy phase change memory with graphene confined layer

    Science.gov (United States)

    Zhu, Chengqiu; Ma, Jun; Ge, Xiaoming; Rao, Feng; Ding, Keyuan; Lv, Shilong; Wu, Liangcai; Song, Zhitang

    2016-06-01

    How to reduce the Reset operation energy is the key scientific and technological problem in the field of phase change memory (PCM). Here, we show in the Ge2Sb2Te5 based PCM cell, inserting an additional graphene monolayer in the Ge2Sb2Te5 layer can remarkably decrease both the Reset current and energy. Because of the small out-of-plane electrical and thermal conductivities of such monolayer graphene, the Set resistance and the heat dissipation towards top TiN electrode of the modified PCM cell are significantly increased and decreased, respectively. The mushroom-typed larger active phase transition volume thus can be confined inside the underlying thinner GST layer, resulting in the lower power consumption.

  7. Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure Graphene Electron Transfer Layer

    Directory of Open Access Journals (Sweden)

    Chih-Hung Hsu

    2014-01-01

    Full Text Available The utilization of nanostructure graphene thin films as electron transfer layer in dye-sensitized solar cells (DSSCs was demonstrated. The effect of a nanostructure graphene thin film in DSSC structure was examined. The nanostructure graphene thin films provides a great electron transfer channel for the photogenerated electrons from TiO2 to indium tin oxide (ITO glass. Obvious improvements in short-circuit current density of the DSSCs were observed by using the graphene electron transport layer modified photoelectrode. The graphene electron transport layer reduces effectively the back reaction in the interface between the ITO transparent conductive film and the electrolyte in the DSSC.

  8. Energetics of a Li Atom adsorbed on B/N doped graphene with monovacancy

    Science.gov (United States)

    Rani, Babita; Jindal, V. K.; Dharamvir, Keya

    2016-08-01

    We use density functional theory (DFT) to study the adsorption properties and diffusion of Li atom across B/N-pyridinic graphene. Regardless of the dopant type, B atoms of B-pyridinic graphene lose electron density. On the other hand, N atoms (p-type dopants) have tendency to gain electron density in N-pyridinic graphene. Higher chemical reactivity and electronic conductivity of B/N-pyridinic graphene are responsible for stronger binding of Li with the substrates as compared to pristine graphene. The binding energy of Li with B/N-pyridinic graphene exceeds the cohesive energy of bulk Li, making it energetically unfavourable for Li to form clusters on these substrates. Li atom gets better adsorbed on N-pyridinic graphene due to an additional p-p hybridization of the orbitals while Li on B-pyridinic prefers the ionic bonding. Also, significant distortion of N-pyridinic graphene upon Li adsorption is a consequence of the change in bonding mechanism between Li atom and the substrate. Our results show that bonding character and hence binding energies between Li and graphene can be tuned with the help of B/N doping of monovacancy defects. Further, the sites for most stable adsorption are different for the two types of doped and defective graphene, leading to greater Li uptake capacity of B-pyridinic graphene near the defect. In addition, B-pyridinic graphene offering lower diffusion barrier, ensures better Li kinetics. Thus, B-pyridinic graphene presents itself as a better anode material for LIBs as compared to N-pyridinic graphene.

  9. Size-Selective Cu Nanocrystals Growth on Single and 2-3 Layers Graphene Films.

    Science.gov (United States)

    Gao, Hui; Li, Xiaolong; Wang, Yunfei; Guo, Haijie; Wang, Yuhua

    2015-09-01

    Cu nanoparticles decorated CVD growth single layer and 2-3 layers graphene films have been synthesized by sputtering deposition and annealing process. The wrinkles were observed on single layer graphene due to high annealing temperature (700 degrees C) and rapid cooling process, which were proved by HRSEM and Raman spectra. Smaller mean diameter and narrower size distribution of Cu nanoparticles were observed on 2-3 layers graphene film than that on single layer graphene. The large particles grow at the expense of small particles, and the particle growth was governed by the Ostwald ripening process. PMID:26716337

  10. Texture of atomic layer deposited ruthenium

    OpenAIRE

    Musschoot, J.; Xie, Q; Deduytsche, D.; De Keyser, K; Longrie, D.; Haemers, J.; Van den Berghe, S.; Van Meirhaeghe, R. L.; D'Haen, Jan; Detavernier, C

    2010-01-01

    Ruthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(1 0 0) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(1 0 0) were polycrystalline, on TiN they were (0 0 2) oriented. After annealing at 800 degrees C for 60 s, all Ru films were strongly (0 0 2) textured and very smooth. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) demonstrated that the lateral grain size of the annealed films was several 100 ...

  11. Bioactive surfaces with atomic layer deposition

    OpenAIRE

    Kvalvik, Julie Nitsche

    2015-01-01

    The overall goal of this work has been to make bioactive surfaces with atomic layer deposition (ALD). To do this, a new ALD system with titanium tetraisopropoxide (TTIP) and lysine as precursors was developed with emphasis on studying the effects of pulsing times and deposition temperatures. TTIP was chosen as titanium is regarded to be biocompatible and lysine was chosen as poly-L-lysine is a part of the extra-cellular matrix (ECM) and hence affects cell adhesion. The effect of a water pulse...

  12. Layer-by-layer polypyrrole coated graphite oxide and graphene nanosheets as catalyst support materials for fuel cells

    OpenAIRE

    Saner Okan, Burcu; Alkan Gürsel, Selmiye; Alkan Gursel, Selmiye; YÜRÜM, YUDA; Yurum, Yuda

    2013-01-01

    For the production of advanced type of catalyst support materials, the distinguished properties of graphene nanosheets were combined with the structural properties of conducting polypyrrole by the incorporation of graphene nanosheets into a polymer matrix by the proposed simple and low-cost fabrication technique. A precise tuning of electrical conductivity and thermal stability was also achieved by controlling the thickness of randomly dispersed graphene nanosheets by a layer-by-layer polymer...

  13. Touch stimulated pulse generation in biomimetic single-layer graphene.

    Science.gov (United States)

    Sul, Onejae; Chun, Hyunsuk; Choi, Eunseok; Choi, Jungbong; Cho, Kyeongwon; Jang, Dongpyo; Chun, Sungwoo; Park, Wanjun; Lee, Seung-Beck

    2016-02-14

    Detecting variation in contact pressure is a separate sensing mode in the human somatosensory system that differs from the detection of pressure magnitude. If pressure magnitude and variation sensing can be achieved simultaneously, an advanced biomimetic tactile system that better emulates human senses may be developed. We report on a novel single-layer graphene based artificial mechanoreceptor that generates a resistance pulse as the contact stimulus passes a specific threshold pressure, mimicking the generation of action potentials in a biological fast-adapting mechanoreceptor. The electric field from a flexible membrane gate electrode placed above a graphene channel raises the Fermi level from the valence band as pressure deflects the membrane. The threshold pressure is reached when the Fermi level crosses the Dirac point in the graphene energy band, which generates a sharp peak in the measured resistance. We found that by changing the gate potential it was possible to modulate the threshold pressure and using a series of graphene channels, a train of pulses were generated during a transient pressurizing stimulus demonstrating biomimetic behaviour. PMID:26790981

  14. Free Energy Relationships in the Electrical Double Layer over Single-Layer Graphene

    Energy Technology Data Exchange (ETDEWEB)

    Achtyl, Jennifer L. [Northwestern University, Evanston; Vlassiouk, Ivan V [ORNL; Fulvio, Pasquale F [ORNL; Mahurin, Shannon Mark [ORNL; Dai, Sheng [ORNL; Geiger, Franz M. [Northwestern University, Evanston

    2013-01-01

    Fluid/solid interfaces containing singlelayer graphene are important in the areas of chemistry, physics, biology, and materials science, yet this environment is difficult to access with experimental methods, especially under flow conditions and in a label-free manner. Herein, we demonstrate the use of second harmonic generation to quantify the interfacial free energy at the fused silica/single-layer graphene/water interface at pH 7 and under conditions of flowing aqueous electrolyte solutions ranging in NaCl concentrations from 10 4 to 10 1 M. Our analysis reveals that single-layer graphene reduces the interfacial free energy density of the fused silica/water interface by a factor of up to 7, which is substantial given that many interfacial processes, including those that are electrochemical in nature, are exponentially sensitive to interfacial free energy density.

  15. CVD films of narrow atomically precise graphene nanoribbons

    Science.gov (United States)

    Shekhirev, Mikhail; Lipatov, Alexey; Harkleroad, Ashley; Sinitskii, Alexander

    Atomically precise graphene nanoribbons (GNRs) is a promising material for the next-generation electronics and optoelectronics. So far, solution-based and surface-assisted approaches have been the two main routes to synthesize GNRs with atomically smooth armchair edges. However, efficient processing of the resulting GNRs into uniform thin films to fabricate GNR-based functional devices remains a formidable challenge. In this presentation we will report the synthesis of narrow armchair GNRs using an alternative approach - a radical polymerization of rationally designed molecular precursors. The technique allows fabrication of thin, transparent and conductive films of GNRs on almost any substrate. Microscopic structure and electrical properties of the fabricated GNR films will also be discussed.

  16. Electrochemistry at the edge of a single graphene layer in a nanopore

    DEFF Research Database (Denmark)

    Banerjee, Sutanuka; Shim, Jeong; Rivera, J.;

    2013-01-01

    We study the electrochemistry of single layer graphene edges using a nanopore-based structure consisting of stacked graphene and AlO dielectric layers. Nanopores, with diameters ranging from 5 to 20 nm, are formed by an electron beam sculpting process on the stacked layers. This leads to a unique...

  17. Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low T{sub e} plasma sources

    Energy Technology Data Exchange (ETDEWEB)

    Jagtiani, Ashish V.; Miyazoe, Hiroyuki; Chang, Josephine; Farmer, Damon B.; Engel, Michael; Neumayer, Deborah; Han, Shu-Jen; Engelmann, Sebastian U., E-mail: suengelm@us.ibm.com; Joseph, Eric A. [IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Boris, David R.; Hernández, Sandra C.; Walton, Scott G. [Plasma Physics Division, Naval Research Laboratory, Washington, DC 20375 (United States); Lock, Evgeniya H. [Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)

    2016-01-15

    The ability to achieve atomic layer precision is the utmost goal in the implementation of atomic layer etch technology. Carbon-based materials such as carbon nanotubes (CNTs) and graphene are single atomic layers of carbon with unique properties and, as such, represent the ultimate candidates to study the ability to process with atomic layer precision and assess impact of plasma damage to atomic layer materials. In this work, the authors use these materials to evaluate the atomic layer processing capabilities of electron beam generated plasmas. First, the authors evaluate damage to semiconducting CNTs when exposed to beam-generated plasmas and compare these results against the results using typical plasma used in semiconductor processing. The authors find that the beam generated plasma resulted in significantly lower current degradation in comparison to typical plasmas. Next, the authors evaluated the use of electron beam generated plasmas to process graphene-based devices by functionalizing graphene with fluorine, nitrogen, or oxygen to facilitate atomic layer deposition (ALD). The authors found that all adsorbed species resulted in successful ALD with varying impact on the transconductance of the graphene. Furthermore, the authors compare the ability of both beam generated plasma as well as a conventional low ion energy inductively coupled plasma (ICP) to remove silicon nitride (SiN) deposited on top of the graphene films. Our results indicate that, while both systems can remove SiN, an increase in the D/G ratio from 0.08 for unprocessed graphene to 0.22 to 0.26 for the beam generated plasma, while the ICP yielded values from 0.52 to 1.78. Generally, while some plasma-induced damage was seen for both plasma sources, a much wider process window as well as far less damage to CNTs and graphene was observed when using electron beam generated plasmas.

  18. Seeing graphene-based sheets

    OpenAIRE

    Jaemyung Kim; Franklin Kim; Jiaxing Huang

    2010-01-01

    Graphene-based sheets such as graphene, graphene oxide and reduced graphene oxide have stimulated great interest due to their promising electronic, mechanical and thermal properties. Microscopy imaging is indispensable for characterizing these single atomic layers, and oftentimes is the first measure of sample quality. This review provides an overview of current imaging techniques for graphene-based sheets and highlights a recently developed fluorescence quenching microscopy technique that al...

  19. Competition between plastic deformation and fracture processes in metal-graphene layered composites

    Science.gov (United States)

    Ovid'ko, I. A.; Sheinerman, A. G.

    2014-12-01

    Competition between plastic deformation and fracture processes in metal-graphene layered composites is theoretically described. In the framework of the suggested approach, plastic deformation and fracture processes controlling the flow stress/strength of a metal-graphene layered composite are the transfer of plastic deformation across a graphene interface and the nanocrack formation initiated by stress fields of lattice dislocations stopped near a graphene interface. With these processes theoretically described, we reveal strength characteristics of metal-graphene layered composites as functions of their key structural parameters, including the metallic layer thickness λ and graphene layer thickness h. The results of our theoretical examination are consistent with the corresponding experimental data (Kim et al 2013 Nat. Commun. 4 2114).

  20. Competition between plastic deformation and fracture processes in metal–graphene layered composites

    International Nuclear Information System (INIS)

    Competition between plastic deformation and fracture processes in metal–graphene layered composites is theoretically described. In the framework of the suggested approach, plastic deformation and fracture processes controlling the flow stress/strength of a metal–graphene layered composite are the transfer of plastic deformation across a graphene interface and the nanocrack formation initiated by stress fields of lattice dislocations stopped near a graphene interface. With these processes theoretically described, we reveal strength characteristics of metal–graphene layered composites as functions of their key structural parameters, including the metallic layer thickness λ and graphene layer thickness h. The results of our theoretical examination are consistent with the corresponding experimental data (Kim et al 2013 Nat. Commun. 4 2114). (paper)

  1. A X-ray diffraction analysis on graphene layers of Assam coal

    Indian Academy of Sciences (India)

    Binoy K Saikia; Rajani K Boruah; Pradip K Gogoi

    2009-01-01

    The so-called turbostatic structure of carbons in coal with randomly oriented stacking of the lamellae (graphene) produces intense peaks, which are the dominant features in its X-ray diffraction profiles. The diffractogram may be conveniently divided into two regions of reciprocal space, the medium S region (1 < S < 3 Å) and a high S region (S > 3 Å) where = 4 -1 sin. To better understand the molecular level structure of high sulphur Assam coal, two coal samples (Tirap-1 and Tirap-2) from Tirap colliery of Makum coalfield, Assam (India) has been interpreted in this study by using the X-ray diffraction profiles. Random layered (graphene) structural parameters of these coals were determined by using X-ray diffraction technique, which showed that the and are 64.99 Å and 22.63 Å for Tirap-2 and 55.54 Å and 23.80 Å for that of Tirap-1 coals respectively. The position of band was found to be at 4.34 Å and 4.13 Å for Tirap-2 and Tirap-1 coals respectively. The number of layers and average number of carbon atoms (N) per aromatic graphene were found to be 21 and 8 for both the coal samples. Proximate, ultimate and ash analysis of the two coal samples were also carried out in this investigation.

  2. Enhanced Performance of Dye-Sensitized Solar Cells with Nanostructure Graphene Electron Transfer Layer

    OpenAIRE

    Chih-Hung Hsu; Jia-Ren Wu; Lung-Chien Chen; Po-Shun Chan; Cheng-Chiang Chen

    2014-01-01

    The utilization of nanostructure graphene thin films as electron transfer layer in dye-sensitized solar cells (DSSCs) was demonstrated. The effect of a nanostructure graphene thin film in DSSC structure was examined. The nanostructure graphene thin films provides a great electron transfer channel for the photogenerated electrons from TiO2 to indium tin oxide (ITO) glass. Obvious improvements in short-circuit current density of the DSSCs were observed by using the graphene electron transport l...

  3. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei

    2013-03-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

  4. Two-dimensional layered semiconductor/graphene heterostructures for solar photovoltaic applications

    Science.gov (United States)

    Shanmugam, Mariyappan; Jacobs-Gedrim, Robin; Song, Eui Sang; Yu, Bin

    2014-10-01

    Schottky barriers formed by graphene (monolayer, bilayer, and multilayer) on 2D layered semiconductor tungsten disulfide (WS2) nanosheets are explored for solar energy harvesting. The characteristics of the graphene-WS2 Schottky junction vary significantly with the number of graphene layers on WS2, resulting in differences in solar cell performance. Compared with monolayer or stacked bilayer graphene, multilayer graphene helps in achieving improved solar cell performance due to superior electrical conductivity. The all-layered-material Schottky barrier solar cell employing WS2 as a photoactive semiconductor exhibits efficient photon absorption in the visible spectral range, yielding 3.3% photoelectric conversion efficiency with multilayer graphene as the Schottky contact. Carrier transport at the graphene/WS2 interface and the interfacial recombination process in the Schottky barrier solar cells are examined.

  5. Geometrical nonlinear free vibration of multi-layered graphene sheets

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jinbao [School of Naval Architecture and Civil Engineering, Zhejiang Ocean University, Zhoushan 316000 (China); He Xiaoqiao; Kitipornchai, S [Department of Building and Construction, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Zhang Hongwu, E-mail: bcxqhe@cityu.edu.hk [State Key Laboratory of Structural Analysis for Industrial Equipment, Department of Engineering Mechanics, Faculty of Vehicle Engineering and Mechanics, Dalian University of Technology, Dalian 116024 (China)

    2011-04-06

    A nonlinear continuum model is developed for the nonlinear vibration analysis of multi-layered graphene sheets (MLGSs), in which the nonlinear van der Waals (vdW) interaction between any two layers is formulated explicitly. The nonlinear equations of motion are studied by the harmonic-balance methods. Based on the present model, the nonlinear stiffened amplitude-frequency relations of double-layered graphene sheets (DLGSs) are investigated in the spectral neighbourhood of lower frequencies. The influence of the vdW interaction on the vibration properties of DLGSs is well illustrated by plotting the resulting modes' shapes, in which in-phase and anti-phase vibrations of DLGSs are studied. In particular, the large-amplitude vibration which associates with the anti-phase resonant frequencies, separating DLGS into single-layered GSs, is a promising application that needs to be explored further. In contrast, the vibration modes that are associated with the resonant frequencies are nonidentical and give various vibration patterns, which indicates that MLGSs are highly suited to being used as high-frequency resonators.

  6. Geometrical nonlinear free vibration of multi-layered graphene sheets

    International Nuclear Information System (INIS)

    A nonlinear continuum model is developed for the nonlinear vibration analysis of multi-layered graphene sheets (MLGSs), in which the nonlinear van der Waals (vdW) interaction between any two layers is formulated explicitly. The nonlinear equations of motion are studied by the harmonic-balance methods. Based on the present model, the nonlinear stiffened amplitude-frequency relations of double-layered graphene sheets (DLGSs) are investigated in the spectral neighbourhood of lower frequencies. The influence of the vdW interaction on the vibration properties of DLGSs is well illustrated by plotting the resulting modes' shapes, in which in-phase and anti-phase vibrations of DLGSs are studied. In particular, the large-amplitude vibration which associates with the anti-phase resonant frequencies, separating DLGS into single-layered GSs, is a promising application that needs to be explored further. In contrast, the vibration modes that are associated with the resonant frequencies are nonidentical and give various vibration patterns, which indicates that MLGSs are highly suited to being used as high-frequency resonators.

  7. Examination of humidity effects on measured thickness and interfacial phenomena of exfoliated graphene on silicon dioxide via amplitude modulation atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Jinkins, K.; Farina, L.; Wu, Y., E-mail: wuy@uwplatt.edu [Engineering Physics Department, University of Wisconsin-Platteville, 1 University Plaza, Platteville, Wisconsin 53818 (United States); Camacho, J. [Mechanical Engineering Department, University of Wisconsin-Platteville, 1 University Plaza, Platteville, Wisconsin 53818 (United States)

    2015-12-14

    The properties of Few-Layer Graphene (FLG) change with the number of layers and Amplitude Modulation (AM) Atomic Force Microscopy (AFM) is commonly used to determine the thickness of FLG. However, AFM measurements have been shown to be sensitive to environmental conditions such as relative humidity (RH). In the present study, AM-AFM is used to measure the thickness and loss tangent of exfoliated graphene on silicon dioxide (SiO{sub 2}) as RH is increased from 10% to 80%. We show that the measured thickness of graphene is dependent on RH. The loss tangent values of the graphene and oxide regions are both affected by humidity, with generally higher loss tangent for graphene than SiO{sub 2}. As RH increases, we observe the loss tangent of both materials approaches the same value. We hypothesize that there is a layer of water trapped between the graphene and SiO{sub 2} substrate to explain this observation. Using this interpretation, the loss tangent images also indicate movement and change in this trapped water layer as RH increases, which impacts the measured thickness of graphene using AM-AFM.

  8. Examination of humidity effects on measured thickness and interfacial phenomena of exfoliated graphene on silicon dioxide via amplitude modulation atomic force microscopy

    International Nuclear Information System (INIS)

    The properties of Few-Layer Graphene (FLG) change with the number of layers and Amplitude Modulation (AM) Atomic Force Microscopy (AFM) is commonly used to determine the thickness of FLG. However, AFM measurements have been shown to be sensitive to environmental conditions such as relative humidity (RH). In the present study, AM-AFM is used to measure the thickness and loss tangent of exfoliated graphene on silicon dioxide (SiO2) as RH is increased from 10% to 80%. We show that the measured thickness of graphene is dependent on RH. The loss tangent values of the graphene and oxide regions are both affected by humidity, with generally higher loss tangent for graphene than SiO2. As RH increases, we observe the loss tangent of both materials approaches the same value. We hypothesize that there is a layer of water trapped between the graphene and SiO2 substrate to explain this observation. Using this interpretation, the loss tangent images also indicate movement and change in this trapped water layer as RH increases, which impacts the measured thickness of graphene using AM-AFM

  9. Printed Graphene Circuits

    OpenAIRE

    Chen, Jian-Hao; Ishigami, Masa; Jang, Chaun; Hines, Daniel R.; Fuhrer, Michael S.; Williams, Ellen D.

    2008-01-01

    we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have low contact resistance. The results show that the transfer printing method is capable of high-quality transfer of graphene materials from silicon dioxide substrates, and the method thus will have wide applications in manipulating and delivering graphene mat...

  10. Layered Chalcogenides beyond Graphene: from Electronic Structure Evolution to the Spin Transport

    Science.gov (United States)

    Yuan, Hongtao

    2014-03-01

    Recent efforts on graphene-like atomic layer materials, aiming at novel electronic properties and quantum phenomena beyond graphene, have attracted much attention for potential electronics/spintronics applications. Compared to the weak spin-orbit-interaction (SOI) in graphene, metal chalcogenides MX2 have heavy 4d/5d elements with strong atomic SOI, providing a unique way for generating spin polarization based on valleytronics physics. Indeed, such a spin-polarized band structure has been demonstrated theoretically and supported by optical investigations. However, despite these exciting progresses, following two important issues in MX2 community remain elusive: 1. the quantitative band structure of MX2 compounds (where are the valleys -band maxima/minima- locating in the BZ) have not been experimentally confirmed. Especially for those cleaved ultrathin mono- and bi-layer flakes hosting most of recently-reported exotic phenomena at the 2D limit, the direct detection for band dispersion becomes of great importance for valleytronics. 2. Spin transports have seldom been reported even though such a strong SOI system can serve as an ideal platform for the spin polarization and spin transport. In this work, we started from the basic electronic structures of representative MX2, obtained by ARPES, and investigated both the band variation between these compounds and their band evolution from bulk to the monolayer limit. After having a systematic understanding on band structures, we reported a giant Zeeman-type spin-polarization generated and modulated by an external electric field in WSe2 electric-double-layer transistors. The non-magnetic approach for realizing such an intriguing spin splitting not only keeps the system time-reversally invariant but also suggests a new paradigm for manipulating the spin-degrees of freedom of electrons. Acknowledge the support from DoE, BES, Division of MSE under contract DE-AC02-76SF00515.

  11. Atomic-layer deposition of silicon nitride

    CERN Document Server

    Yokoyama, S; Ooba, K

    1999-01-01

    Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

  12. An Analytical Model for Adsorption and Diffusion of Atoms/Ions on Graphene Surface

    Directory of Open Access Journals (Sweden)

    Yan-Zi Yu

    2015-01-01

    Full Text Available Theoretical investigations are made on adsorption and diffusion of atoms/ions on graphene surface based on an analytical continuous model. An atom/ion interacts with every carbon atom of graphene through a pairwise potential which can be approximated by the Lennard-Jones (L-J potential. Using the Fourier expansion of the interaction potential, the total interaction energy between the adsorption atom/ion and a monolayer graphene is derived. The energy-distance relationships in the normal and lateral directions for varied atoms/ions, including gold atom (Au, platinum atom (Pt, manganese ion (Mn2+, sodium ion (Na1+, and lithium-ion (Li1+, on monolayer graphene surface are analyzed. The equilibrium position and binding energy of the atoms/ions at three particular adsorption sites (hollow, bridge, and top are calculated, and the adsorption stability is discussed. The results show that H-site is the most stable adsorption site, which is in agreement with the results of other literatures. What is more, the periodic interaction energy and interaction forces of lithium-ion diffusing along specific paths on graphene surface are also obtained and analyzed. The minimum energy barrier for diffusion is calculated. The possible applications of present study include drug delivery system (DDS, atomic scale friction, rechargeable lithium-ion graphene battery, and energy storage in carbon materials.

  13. Atomic structure of Pt nanoclusters supported by graphene/Ir(111) and reversible transformation under CO exposure

    Science.gov (United States)

    Franz, Dirk; Blanc, Nils; Coraux, Johann; Renaud, Gilles; Runte, Sven; Gerber, Timm; Busse, Carsten; Michely, Thomas; Feibelman, Peter J.; Hejral, Uta; Stierle, Andreas

    2016-01-01

    We have investigated the atomic structure of graphene/Ir(111) supported platinum clusters with on average fewer than 40 atoms by means of surface x-ray diffraction (SXRD), grazing incidence small angle x-ray scattering (GISAXS), and normal incidence x-ray standing waves (NIXSW) measurements, in comparison with density functional theory calculations (DFT). GISAXS revealed that the clusters with 1.3 nm diameter form a regular array with domain sizes of 90 nm. SXRD shows that the 1-2 monolayer high, (111) oriented Pt nanoparticles grow epitaxially on the graphene support. From the combined analysis of the SXRD and NIXSW data, a three-dimensional (3D) structural model of the clusters and the graphene support can be deduced which is in line with the DFT results. For the clusters grown in ultrahigh vacuum the lattice parameter is reduced by (4.6 ±0.1 )% compared to bulk platinum. The graphene layer undergoes a strong Pt adsorption induced buckling, caused by a rehybridization of the carbon atoms below the cluster. In situ observation of the Pt clusters in CO and O2 environments revealed a reversible change of the clusters' strain state while successively dosing CO at room temperature and O2 at 575 K, pointing to a CO oxidation activity of the Pt clusters.

  14. Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

    Institute of Scientific and Technical Information of China (English)

    Lin Xin; Wang Hai-Long; Pan Hui; Xu Huai-Zhe

    2011-01-01

    The energy band structure of single-layer graphene under one-dimensional electric and magnetic field modulation is theoretically investigated. The criterion for bandgap opening at the Dirac point is analytically derived with a two-fold degeneracy second-order perturbation method. It is shown that a direct or an indirect bandgap semiconductor could be realized in a single-layer graphene under some specific configurations of the electric and magnetic field arrangement. Due to the bandgap generated in the single-layer graphene, the Klein tunneling observed in pristine graphene is completely suppressed.

  15. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

    OpenAIRE

    Song, Can-Li; Wang, Yi-Lin; Jiang, Ye-Ping; Zhang, Yi; Chang, Cui-Zu; Wang, Lili; He, Ke; Chen, Xi; Jia, Jin-Feng; Wang, Yayu; Fang, Zhong; Dai, Xi; Xie, Xin-Cheng; Qi, Xiao-Liang; Zhang, Shou-Cheng

    2010-01-01

    Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\\pm 0.2x1011/cm2, and become a bulk insulator at a ...

  16. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

    Science.gov (United States)

    Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

    2016-08-01

    We report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of deposition show a strong dependence between the Dirac point and Sr oxidation. Subsequently, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

  17. Quantum Dots and Andreev Reflections in Graphene

    NARCIS (Netherlands)

    Liu, X.L.

    2010-01-01

    Graphene is an exceptionally thin semiconductor that consists of only one atomic layer of carbon atoms. The electrons in graphene live in a strictly two-dimensional (2D) world. In addition to this remarkable 2Dness, it is also peculiar that the behavior of the electrons in graphene is governed by th

  18. The enhanced electrocatalytic activity of graphene co-doped with chlorine and fluorine atoms

    International Nuclear Information System (INIS)

    Graphene co-doped with fluorine and chlorine was prepared through a one-step synthesis to greatly enhance its electrocatalytic activity and stability for oxygen reduction reaction. - Highlights: • Developed a one-step synthesis of graphene co-doped with different halogen atoms. • The obtained graphene exhibits great electrocatalytic activity in the oxygen reduction reaction. • The chlorine–fluorine co-doped graphene has great stability in methanol crossover effect. • Experiments indicate that there are possible synergetic interactions between halogen dopants. - Abstract: Graphene co-doped with fluorine and chlorine heteroatoms was prepared through a one-step synthesis and was investigated as the oxygen reduction electrocatalysts. Voltammetric measurements show that fluorine and chlorine co-doped graphene has remarkable catalytic activity toward the electrochemical reduction of oxygen in alkaline solution. Besides having a high tolerance to methanol crossover effect, the co-doped graphene also showed a better stability than that of commercial Pt/C electrocatalysts and of the chlorine-doped graphene that was prepared by the same approach. The charge transfer resistance of the co-doped graphene was substantially lower than that of the chlorine-doped graphene, suggesting that there may exist a synergistic interaction between fluorine and chlorine dopants. The rapid synthetic method reported here provides an effective approach for future investigation of halogen (co-) doped graphene

  19. Kapitza Resistance between Few-Layer Graphene and Water: Liquid Layering Effects

    DEFF Research Database (Denmark)

    Alexeev, Dmitry; Chen, Jie; Walther, Jens Honore;

    2015-01-01

    The Kapitza resistance (RK) between few-layer graphene (FLG) and water was studied using molecular dynamics simulations. The RK was found to depend on the number of the layers in the FLG though, surprisingly, not on the water blockthickness. This distinct size dependence is attributed to the larg...... between FLG and water. These findings suggest novel ways to engineer the thermal transport properties of solid−liquidinterfaces by controlling and regulating the liquid layering at the interface.......The Kapitza resistance (RK) between few-layer graphene (FLG) and water was studied using molecular dynamics simulations. The RK was found to depend on the number of the layers in the FLG though, surprisingly, not on the water blockthickness. This distinct size dependence is attributed to the large...... difference in the phonon mean free path between the FLG and water. Remarkably, RK is strongly dependent on the layering of water adjacent to the FLG, exhibiting an inverse proportionality relationship to the peak density of the first water layer, which is consistent with better acoustic phonon matching...

  20. Fabrication of hybrid graphene oxide/polyelectrolyte capsules by means of layer-by-layer assembly on erythrocyte cell templates

    Directory of Open Access Journals (Sweden)

    Joseba Irigoyen

    2015-12-01

    Full Text Available A novel and facile method was developed to produce hybrid graphene oxide (GO–polyelectrolyte (PE capsules using erythrocyte cells as templates. The capsules are easily produced through the layer-by-layer technique using alternating polyelectrolyte layers and GO sheets. The amount of GO and therefore its coverage in the resulting capsules can be tuned by adjusting the concentration of the GO dispersion during the assembly. The capsules retain the approximate shape and size of the erythrocyte template after the latter is totally removed by oxidation with NaOCl in water. The PE/GO capsules maintain their integrity and can be placed or located on other surfaces such as in a device. When the capsules are dried in air, they collapse to form a film that is approximately twice the thickness of the capsule membrane. AFM images in the present study suggest a film thickness of approx. 30 nm for the capsules in the collapsed state implying a thickness of approx. 15 nm for the layers in the collapsed capsule membrane. The polyelectrolytes used in the present study were polyallylamine hydrochloride (PAH and polystyrenesulfonate sodium salt (PSS. Capsules where characterized by transmission electron microscopy (TEM, atomic force microscopy (AFM, dynamic light scattering (DLS and Raman microscopy, the constituent layers by zeta potential and GO by TEM, XRD, and Raman and FTIR spectroscopies.

  1. Visualization of deuterium dead layer by atom probe tomography

    KAUST Repository

    Gemma, Ryota

    2012-12-01

    The first direct observation, by atom probe tomography, of a deuterium dead layer is reported for Fe/V multilayered film loaded with D solute atoms. The thickness of the dead layers was measured to be 0.4-0.5 nm. The dead layers could be distinguished from chemically intermixed layers. The results suggest that the dead layer effect occurs even near the interface of the mixing layers, supporting an interpretation that the dead layer effect cannot be explained solely by electronic charge transfer but also involves a modulation of rigidity. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  2. High performance CNT point emitter with graphene interfacial layer

    International Nuclear Information System (INIS)

    Carbon nanotubes (CNTs) have great potential in the development of high-power electron beam sources. However, for such a high-performance electronic device, the electric and thermal contact problem between the metal and CNTs must be improved. Here, we report graphene as an interfacial layer between the metal and CNTs to improve the interfacial contact. The interfacial graphene layer results in a dramatic decrease of the electrical contact resistance by an order of 2 and an increase of the interfacial thermal conductivity by 16%. Such a high improvement in the electrical and thermal interface leads to superior field emission performance with a very low turn-on field of 1.49 V μm−1 at 10 μA cm−2 and a threshold field of 2.00 V μm−1 at 10 mA cm−2, as well as the maximum current of 16 mA (current density of 2300 A cm−2). (paper)

  3. Correlating Atomic Structure and Transport in Suspended Graphene Nanoribbons

    OpenAIRE

    Qi, Zhengqing John; Rodríguez-Manzo, Julio A.; Botello-Méndez, Andrés R.; Hong, Sung Ju; Stach, Eric A.; Park, Yung Woo; Charlier, Jean-Christophe; Drndić, Marija; Johnson, A. T. Charlie

    2014-01-01

    Graphene nanoribbons (GNRs) are promising candidates for next generation integrated circuit (IC) components; this fact motivates exploration of the relationship between crystallographic structure and transport of graphene patterned at IC-relevant length scales (

  4. Large scale atomistic simulation of single-layer graphene growth on Ni(111) surface: molecular dynamics simulation based on a new generation of carbon-metal potential

    Science.gov (United States)

    Xu, Ziwei; Yan, Tianying; Liu, Guiwu; Qiao, Guanjun; Ding, Feng

    2015-12-01

    To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (5|7) to two adjacent hexagons (6|6), were revealed as well. The study also showed that higher temperature and longer annealing time are essential to form high quality graphene layers, which is in agreement with experimental reports and previous theoretical results.To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (5|7) to two adjacent hexagons (6|6), were revealed as well. The study also showed that higher temperature and longer annealing time are

  5. Atomic Layer Thermopile Materials: Physics and Application

    Directory of Open Access Journals (Sweden)

    P. X. Zhang

    2008-01-01

    Full Text Available New types of thermoelectric materials characterized by highly anisotropic Fermi surfaces and thus anisotropic Seebeck coefficients are reviewed. Early studies revealed that there is an induced voltage in high TC oxide superconductors when the surface of the films is exposed to short light pulses. Subsequent investigations proved that the effect is due to anisotropic components of the Seebeck tensor, and the type of materials is referred to atomic layer thermopile (ALT. Our recent studies indicate that multilayer thin films at the nanoscale demonstrate enhanced ALT properties. This is in agreement with the prediction in seeking the larger figure of merit (ZT thermoelectric materials in nanostructures. The study of ALT materials provides both deep insight of anisotropic transport property of these materials and at the same time potential materials for applications, such as light detector and microcooler. By measuring the ALT properties under various perturbations, it is found that the information on anisotropic transport properties can be provided. The information sometimes is not easily obtained by other tools due to the nanoscale phase coexistence in these materials. Also, some remained open questions and future development in this research direction have been well discussed.

  6. Quantum dynamics of hydrogen atoms on graphene. II. Sticking

    Energy Technology Data Exchange (ETDEWEB)

    Bonfanti, Matteo, E-mail: matteo.bonfanti@unimi.it [Dipartimento di Chimica, Università degli Studi di Milano, v. Golgi 19, 20133 Milano (Italy); Jackson, Bret [Department of Chemistry, University of Massachusetts, Amherst, Massachusetts 01003 (United States); Hughes, Keith H. [School of Chemistry, Bangor University, Bangor, Gwynedd LL57 2UW (United Kingdom); Burghardt, Irene [Institute of Physical and Theoretical Chemistry, Goethe University Frankfurt, Max-von-Laue-Str. 7, 60438 Frankfurt/Main (Germany); Martinazzo, Rocco, E-mail: rocco.martinazzo@unimi.it [Dipartimento di Chimica, Università degli Studi di Milano, v. Golgi 19, 20133 Milano (Italy); Istituto di Scienze e Tecnologie Molecolari, Consiglio Nazionale delle Richerche, v. Golgi 19, 20133 Milano (Italy)

    2015-09-28

    Following our recent system-bath modeling of the interaction between a hydrogen atom and a graphene surface [Bonfanti et al., J. Chem. Phys. 143, 124703 (2015)], we present the results of converged quantum scattering calculations on the activated sticking dynamics. The focus of this study is the collinear scattering on a surface at zero temperature, which is treated with high-dimensional wavepacket propagations with the multi-configuration time-dependent Hartree method. At low collision energies, barrier-crossing dominates the sticking and any projectile that overcomes the barrier gets trapped in the chemisorption well. However, at high collision energies, energy transfer to the surface is a limiting factor, and fast H atoms hardly dissipate their excess energy and stick on the surface. As a consequence, the sticking coefficient is maximum (∼0.65) at an energy which is about one and half larger than the barrier height. Comparison of the results with classical and quasi-classical calculations shows that quantum fluctuations of the lattice play a primary role in the dynamics. A simple impulsive model describing the collision of a classical projectile with a quantum surface is developed which reproduces the quantum results remarkably well for all but the lowest energies, thereby capturing the essential physics of the activated sticking dynamics investigated.

  7. Quantum dynamics of hydrogen atoms on graphene. II. Sticking

    International Nuclear Information System (INIS)

    Following our recent system-bath modeling of the interaction between a hydrogen atom and a graphene surface [Bonfanti et al., J. Chem. Phys. 143, 124703 (2015)], we present the results of converged quantum scattering calculations on the activated sticking dynamics. The focus of this study is the collinear scattering on a surface at zero temperature, which is treated with high-dimensional wavepacket propagations with the multi-configuration time-dependent Hartree method. At low collision energies, barrier-crossing dominates the sticking and any projectile that overcomes the barrier gets trapped in the chemisorption well. However, at high collision energies, energy transfer to the surface is a limiting factor, and fast H atoms hardly dissipate their excess energy and stick on the surface. As a consequence, the sticking coefficient is maximum (∼0.65) at an energy which is about one and half larger than the barrier height. Comparison of the results with classical and quasi-classical calculations shows that quantum fluctuations of the lattice play a primary role in the dynamics. A simple impulsive model describing the collision of a classical projectile with a quantum surface is developed which reproduces the quantum results remarkably well for all but the lowest energies, thereby capturing the essential physics of the activated sticking dynamics investigated

  8. Dynamic plowing lithography and 6P thin film growth on graphene investigated by atomic force microscopy

    International Nuclear Information System (INIS)

    Full text: For the design of novel graphene based devices specific modifications and manipulations of graphene are essential. The desired properties might be achieved by selective straining and/or multistacking of graphene. As a model system we investigated the growth morphology of the rodlike para-hexaphenyl (6P) molecule on as prepared and dynamic plowing lithography (DPL) modified graphene. As substrate exfoliated graphene flakes on silicon dioxide (SiO2) were used. The DPL of the graphene was performed by bringing the very hard diamond coated tip of a vibrating atomic force microscopy (AFM) probe into close proximity to the substrate. Depending on the chosen experimental parameters the interaction forces between tip and substrate lead either to a local deformation or even to cutting of the graphene flake. The 6P was deposited by means of hot wall epitaxy at sample temperatures above room temperature. The resulting film morphologies on the unaltered and DPL modified graphene were investigated via atomic force microscopy. While on the SiO2 only 6P islands consisting from upright standing molecules are found there are additional needle like structures exclusively found on the graphene. (author)

  9. Study of nanotribological properties of multilayer graphene by calibrated atomic force microscopy

    International Nuclear Information System (INIS)

    The nanotribological properties of multilayer graphene oxide (MGO), multilayer reduced graphene oxide (MRGO), and mechanically exfoliated multilayer graphene (MEMG) deposited on SiO2 substrate were comparatively investigated via calibrated atomic force microscopy in ambient conditions. Friction as a function of the applied normal load and sliding velocity was studied. Results show that all three types of multilayer graphene films exhibit good adhesion and friction reduction properties. MEMG exhibits the lowest friction and adhesive force because of its perfect planar lattice. A logarithmic increase in friction was observed at low sliding velocities for all measured graphene films. Friction decreases on MGO and bare SiO2 substrate, whereas it remains approximately constant on MEMG and MRGO, when the sliding velocity exceeds their critical velocities. The possible mechanisms for the experimental results were discussed. Our studies provide a good opportunity to use different types of multilayer graphene films for promising lubricant applications in nanodevices. (dochead)

  10. Growth of Large-Area Single- and Bi-Layer Graphene by Controlled Carbon Precipitation on Polycrystalline Ni Surfaces

    OpenAIRE

    Reina, Alfonso; Thiele, Stefan; Jia, Xiaoting; Bhaviripudi, Sreekar; Dresselhaus, Mildred S.; Schaefer, Juergen A.; Kong, Jing

    2009-01-01

    We report graphene films composed mostly of one or two layers of graphene grown by controlled carbon precipitation on the surface of polycrystalline Ni thin films during atmospheric chemical vapor deposition (CVD). Controlling both the methane concentration during CVD and the substrate cooling rate during graphene growth can significantly improve the thickness uniformity. As a result, one- or two- layer graphene regions occupy up to 87% of the film area. Single layer coverage accounts for 5%–...

  11. Thermoacoustic and photoacoustic characterizations of few-layer graphene by pulsed excitations

    Science.gov (United States)

    Wang, Xiong; Witte, Russell S.; Xin, Hao

    2016-04-01

    We characterized the thermoacoustic and photoacoustic properties of large-area, few-layer graphene by pulsed microwave and optical excitations. Due to its high electric conductivity and low heat capacity per unit area, graphene lends itself to excellent microwave and optical energy absorption and acoustic signal emanation due to the thermoacoustic effect. When exposed to pulsed microwave or optical radiation, distinct thermoacoustic and photoacoustic signals generated by the few-layer graphene are obtained due to microwave and laser absorption of the graphene, respectively. Clear thermoacoustic and photoacoustic images of large-area graphene sample are achieved. A numerical model is developed and the simulated results are in good accordance with the measured ones. This characterization work may find applications in ultrasound generator and detectors for microwave and optical radiation. It may also become an alternative characterization approach for graphene and other types of two-dimensional materials.

  12. Strong THz and Infrared Optical Forces on a Suspended Single-Layer Graphene Sheet

    CERN Document Server

    Mousavi, S Hossein; Wang, Zheng

    2014-01-01

    Single-layer graphene exhibits exceptional mechanical properties attractive for optomechanics: it combines low mass density, large tensile modulus, and low bending stiffness. However, at visible wavelengths, graphene absorbs weakly and reflects even less, thereby inadequate to generate large optical forces needed in optomechanics. Here, we numerically show that a single-layer graphene sheet is sufficient to produce strong optical forces under terahertz or infrared illumination. For a system as simple as graphene suspended atop a uniform substrate, high reflectivity from the substrate is crucial in creating a standing-wave pattern, leading to a strong optical force on graphene. This force is readily tunable in amplitude and direction by adjusting the suspension height. In particular, repellent optical forces can levitate graphene to a series of stable equilibrium heights above the substrate. One of the key parameters to maximize the optical force is the excitation frequency: peak forces are found near the scat...

  13. Robust adhesion of flower-like few-layer graphene nanoclusters

    Science.gov (United States)

    Tian, Shibing; Li, Lin; Sun, Wangning; Xia, Xiaoxiang; Han, Dong; Li, Junjie; Gu, Changzhi

    2012-07-01

    Nanostructured surface possessing ultrahigh adhesion like ``gecko foot'' or ``rose petal'' can offer more opportunities for bionic application. We grow flower-like few-layer graphene on silicon nanocone arrays to form graphene nanoclusters, showing robust adhesion. Their contact angle (CA) is 164° with a hysteresis CA of 155° and adhesive force for a 5 μL water droplet is about 254 μN that is far larger than present reported results. We bring experimental evidences that this great adhesion depends on large-area plentiful edges of graphene nanosheets tuned by conical nanostructure and intrinsic wetting features of graphene. Such new hierarchical few-layer graphene nanostructure provides a feasible strategy to understand the ultra-adhesive mechanism of the ``gecko effect'' or ``rose effect'' and enhance the wettability of graphene for many practical applications.

  14. Highly ordered ultralong magnetic nanowires wrapped in stacked graphene layers

    Directory of Open Access Journals (Sweden)

    Abdel-Aziz El Mel

    2012-12-01

    Full Text Available We report on the synthesis and magnetic characterization of ultralong (1 cm arrays of highly ordered coaxial nanowires with nickel cores and graphene stacking shells (also known as metal-filled carbon nanotubes. Carbon-containing nickel nanowires are first grown on a nanograted surface by magnetron sputtering. Then, a post-annealing treatment favors the metal-catalyzed crystallization of carbon into stacked graphene layers rolled around the nickel cores. The observed uniaxial magnetic anisotropy field oriented along the nanowire axis is an indication that the shape anisotropy dominates the dipolar coupling between the wires. We further show that the thermal treatment induces a decrease in the coercivity of the nanowire arrays. This reflects an enhancement of the quality of the nickel nanowires after annealing attributed to a decrease of the roughness of the nickel surface and to a reduction of the defect density. This new type of graphene–ferromagnetic-metal nanowire appears to be an interesting building block for spintronic applications.

  15. Layer-by-layer assembly of functionalized reduced graphene oxide for direct electrochemistry and glucose detection.

    Science.gov (United States)

    Mascagni, Daniela Branco Tavares; Miyazaki, Celina Massumi; da Cruz, Nilson Cristino; de Moraes, Marli Leite; Riul, Antonio; Ferreira, Marystela

    2016-11-01

    We report an electrochemical glucose biosensor made with layer-by-layer (LbL) films of functionalized reduced graphene oxide (rGO) and glucose oxidase (GOx). The LbL assembly using positively and negatively charged rGO multilayers represents a simple approach to develop enzymatic biosensors. The electron transport properties of graphene were combined with the specificity provided by the enzyme. rGO was obtained and functionalized using chemical methods, being positively charged with poly(diallyldimethylammonium chloride) to form GPDDA, and negatively charged with poly(styrene sulfonate) to form GPSS. Stable aqueous dispersions of GPDDA and GPSS are easily obtained, enabling the growth of LbL films on various solid supports. The use of graphene in the immobilization of GOx promoted Direct Electron Transfer, which was evaluated by Cyclic Voltammetry. Amperometric measurements indicated a detection limit of 13.4μmol·L(-1) and sensitivity of 2.47μA·cm(-2)·mmol(-1)·L for glucose with the (GPDDA/GPSS)1/(GPDDA/GOx)2 architecture, whose thickness was 19.80±0.28nm, as determined by Surface Plasmon Resonance (SPR). The sensor may be useful for clinical analysis since glucose could be detected even in the presence of typical interfering agents and in real samples of a lactose-free milk and an electrolyte solution to prevent dehydration. PMID:27524075

  16. Graphene-like two-dimensional layered nanomaterials: applications in biosensors and nanomedicine

    Science.gov (United States)

    Yang, Guohai; Zhu, Chengzhou; Du, Dan; Zhu, Junjie; Lin, Yuehe

    2015-08-01

    The development of nanotechnology provides promising opportunities for various important applications. The recent discovery of atomically-thick two-dimensional (2D) nanomaterials can offer manifold perspectives to construct versatile devices with high-performance to satisfy multiple requirements. Many studies directed at graphene have stimulated renewed interest on graphene-like 2D layered nanomaterials (GLNs). GLNs including boron nitride nanosheets, graphitic-carbon nitride nanosheets and transition metal dichalcogenides (e.g. MoS2 and WS2) have attracted significant interest in numerous research fields from physics and chemistry to biology and engineering, which has led to numerous interdisciplinary advances in nano science. Benefiting from the unique physical and chemical properties (e.g. strong mechanical strength, high surface area, unparalleled thermal conductivity, remarkable biocompatibility and ease of functionalization), these 2D layered nanomaterials have shown great potential in biochemistry and biomedicine. This review summarizes recent advances of GLNs in applications of biosensors and nanomedicine, including electrochemical biosensors, optical biosensors, bioimaging, drug delivery and cancer therapy. Current challenges and future perspectives in these rapidly developing areas are also outlined. It is expected that they will have great practical foundation in biomedical applications with future efforts.

  17. Long-Term Passivation of Strongly Interacting Metals with Single-Layer Graphene

    OpenAIRE

    Weatherup, Robert S.; D’Arsié, Lorenzo; Cabrero-Vilatela, Andrea; Caneva, Sabina; Blume, Raoul; Robertson, John; Schloegl, Robert; Hofmann, Stephan

    2015-01-01

    The long-term (>18 months) protection of Ni surfaces against oxidation under atmospheric conditions is demonstrated by coverage with single-layer graphene, formed by chemical vapor deposition. In situ, depth-resolved X-ray photoelectron spectroscopy of various graphene-coated transition metals reveals that a strong graphene–metal interaction is of key importance in achieving this long-term protection. This strong interaction prevents the rapid intercalation of oxidizing species at the graphen...

  18. Ionic liquid-assisted exfoliation and dispersion: stripping graphene and its two-dimensional layered inorganic counterparts of their inhibitions

    Science.gov (United States)

    Ravula, Sudhir; Baker, Sheila N.; Kamath, Ganesh; Baker, Gary A.

    2015-02-01

    Research on graphene--monolayers of carbon atoms arranged in a honeycomb lattice--is proceeding at a relentless pace as scientists of both experimental and theoretical bents seek to explore and exploit its superlative attributes, including giant intrinsic charge mobility, record-setting thermal conductivity, and high fracture strength and Young's modulus. Of course, fully exploiting the remarkable properties of graphene requires reliable, large-scale production methods which are non-oxidative and introduce minimal defects, criteria not fully satisfied by current approaches. A major advance in this direction is ionic liquid-assisted exfoliation and dispersion of graphite, leading to the isolation of few- and single-layered graphene sheets with yields two orders of magnitude higher than the earlier liquid-assisted exfoliation approaches using surface energy-matched solvents such as N-methyl-2-pyrrolidone (NMP). In this Minireview, we discuss the emerging use of ionic liquids for the practical exfoliation, dispersion, and modification of graphene nanosheets. These developments lay the foundation for strategies seeking to overcome the many challenges faced by current liquid-phase exfoliation approaches. Early computational and experimental results clearly indicate that these same approaches can readily be extended to inorganic graphene analogues (e.g., BN, MoX2 (X = S, Se, Te), WS2, TaSe2, NbSe2, NiTe2, and Bi2Te3) as well.

  19. Graphene-GaAs-graphene stacked layers for the improvement of the transmission at the wavelength of 1.55 μm

    Science.gov (United States)

    Ajlani, Hosni; Azizi, Mohamed Karim; Gharsallah, Ali; Oueslati, Meherzi

    2016-07-01

    Transmission filter operating at the wavelength of 1.55 μm and based on stacked graphene-GaAs-graphene layers separated by air gaps is presented. By using the transfer matrix method (TMM), we show that the addition of a graphene layer at each interface of a GaAs-based stratified structure, which initially exhibit only 30% transmission at 1.55 μm, allows the active control of the transmission by the adjustment of the graphene chemical potential. Transmission of almost 100% at the wavelength of 1.55 μm is achieved after addition of graphene layers. These results show the potential role of stacked graphene-GaAs-graphene layers in the development of new optical active communications devices.

  20. The stability and electronic structure of Fe atoms embedded in zigzag graphene nanoribbons

    International Nuclear Information System (INIS)

    The stability and electronic properties of the Fe atoms embedded in divacancy defects in graphene nanoribbons (GNR) with zigzag-shaped edges have been studied by first-principles calculations. When Fe is positioned in the middle of the ribbon, it has little effect on the edge C atoms, which reserves the flat edges of graphene nanoribbons. On the other hand, when Fe atom is near the edge, structural distortion takes place resulting in tilted-edge structure with low energies. This indicates that the Fe atoms prefer to occupy divacancy sites near the edges. This is also in consistent with the analyses of electronic structures. Meanwhile, our results reveal that embedding Fe atom in the graphene nanoribbons is an effective method to make the GNR possessing metallic properties.

  1. Environmental Synthesis of Few Layers Graphene Sheets Using Ultrasonic Exfoliation with Enhanced Electrical and Thermal Properties.

    Science.gov (United States)

    Noroozi, Monir; Zakaria, Azmi; Radiman, Shahidan; Abdul Wahab, Zaidan

    2016-01-01

    In this paper, we report how few layers graphene that can be produced in large quantity with low defect ratio from exfoliation of graphite by using a high intensity probe sonication in water containing liquid hand soap and PVP. It was founded that the graphene powder obtained by this simple exfoliation method after the heat treatment had an excellent exfoliation into a single or layered graphene sheets. The UV-visible spectroscopy, FESEM, TEM, X-ray powder diffraction and Raman spectroscopy was used to analyse the graphene product. The thermal diffusivity of the samples was analysed using a highly accurate thermal-wave cavity photothermal technique. The data obtained showed excellent enhancement in the thermal diffusivity of the graphene dispersion. This well-dispersed graphene was then used to fabricate an electrically conductive polymer-graphene film composite. The results demonstrated that this low cost and environmental friendly technique allowed to the production of high quality layered graphene sheets, improved the thermal and electrical properties. This may find use in the wide range of applications based on graphene. PMID:27064575

  2. Rebar Graphene

    OpenAIRE

    Yan, Zheng; Peng, Zhiwei; Casillas, Gilberto; Lin, Jian; Xiang, Changsheng; Zhou, Haiqing; Yang, Yang; Ruan, Gedeng; Raji, Abdul-Rahman O.; Samuel, Errol L. G.; Hauge, Robert H.; Yacaman, Miguel Jose; Tour, James M.

    2014-01-01

    As the cylindrical sp2-bonded carbon allotrope, carbon nanotubes (CNTs) have been widely used to reinforce bulk materials such as polymers, ceramics, and metals. However, both the concept demonstration and the fundamental understanding on how 1D CNTs reinforce atomically thin 2D layered materials, such as graphene, are still absent. Here, we demonstrate the successful synthesis of CNT-toughened graphene by simply annealing functionalized CNTs on Cu foils without needing to introduce extraneou...

  3. Fast response and recovery of hydrogen sensing in Pd-Pt nanoparticle-graphene composite layers

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rakesh; Varandani, Deepak; Mehta, B R; Singh, V N [Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Wen Zhenhai; Feng Xinliang; Muellen, Klaus, E-mail: brmehta@physics.iitd.ernet.in [Max-Planck Institute for Polymer Research, D-55128 Mainz (Germany)

    2011-07-08

    This study reports the fast response and recovery of hydrogen sensing in nanoparticle-graphene composite layers fabricated using chemical methods and comprising of isolated Pd alloy nanoparticles dispersed onto graphene layers. For 2% hydrogen at 40 {sup 0}C and 1 atm pressure, a response time of < 2 s and a recovery time of 18 s are observed. The fast response and recovery observed during sensing are due to hydrogen-induced changes in the work function of the Pd alloy and modification in the distribution of defect states in the graphene band gap due to gas adsorption. The results of hydrogen sensing in the new class of Pd-Pt nanoparticle-graphene composite material are important for understanding the effect of gas adsorption on electronic conduction in graphene layers and for developing a new type of gas sensor based on changes in the electronic properties of the interface.

  4. Thinning and functionalization of few-layer graphene sheets by CF4 plasma treatment

    KAUST Repository

    Shen, Chao

    2012-05-24

    Structural changes of few-layer graphene sheets induced by CF4 plasma treatment are studied by optical microscopy and Raman spectroscopy, together with theoretical simulation. Experimental results suggest a thickness reduction of few-layer graphene sheets subjected to prolonged CF4 plasma treatment while plasma treatment with short time only leads to fluorine functionalization on the surface layer by formation of covalent bonds. Raman spectra reveal an increase in disorder by physical disruption of the graphene lattice as well as functionalization during the plasma treatment. The F/CF3 adsorption and the lattice distortion produced are proved by theoretical simulation using density functional theory, which also predicts p-type doping and Dirac cone splitting in CF4 plasma-treated graphene sheets that may have potential in future graphene-based micro/nanodevices.

  5. Directed self-assembly of block copolymer films on atomically-thin graphene chemical patterns.

    Science.gov (United States)

    Chang, Tzu-Hsuan; Xiong, Shisheng; Jacobberger, Robert M; Mikael, Solomon; Suh, Hyo Seon; Liu, Chi-Chun; Geng, Dalong; Wang, Xudong; Arnold, Michael S; Ma, Zhenqiang; Nealey, Paul F

    2016-01-01

    Directed self-assembly of block copolymers is a scalable method to fabricate well-ordered patterns over the wafer scale with feature sizes below the resolution of conventional lithography. Typically, lithographically-defined prepatterns with varying chemical contrast are used to rationally guide the assembly of block copolymers. The directed self-assembly to obtain accurate registration and alignment is largely influenced by the assembly kinetics. Furthermore, a considerably broad processing window is favored for industrial manufacturing. Using an atomically-thin layer of graphene on germanium, after two simple processing steps, we create a novel chemical pattern to direct the assembly of polystyrene-block-poly(methyl methacrylate). Faster assembly kinetics are observed on graphene/germanium chemical patterns than on conventional chemical patterns based on polymer mats and brushes. This new chemical pattern allows for assembly on a wide range of guiding periods and along designed 90° bending structures. We also achieve density multiplication by a factor of 10, greatly enhancing the pattern resolution. The rapid assembly kinetics, minimal topography, and broad processing window demonstrate the advantages of inorganic chemical patterns composed of hard surfaces. PMID:27528258

  6. Prediction of structural and mechanical properties of atom-decorated porous graphene via density functional calculations

    Science.gov (United States)

    Ansari, Reza; Ajori, Shahram; Malakpour, Sina

    2016-04-01

    The considerable demand for novel materials with specific properties has motivated the researchers to synthesize supramolecular nanostructures through different methods. Porous graphene is the first two-dimensional hydrocarbon synthesized quite recently. This investigation is aimed at studying the mechanical properties of atom-decorated (functionalized) porous graphene by employing density functional theory (DFT) calculation within both local density approximations (LDA) and generalized gradient approximations (GGA). The atoms are selected from period 3 of periodic table as well as Li and O atom from period 2. The results reveal that metallic atoms and noble gases are adsorbed physically on porous graphene and nonmetallic ones form chemical bonds with carbon atom in porous graphene structure. Also, it is shown that, in general, atom decoration reduces the values of mechanical properties such as Young's, bulk and shear moduli as well as Poisson's ratio, and this reduction is more considerable in the case of nonmetallic atoms (chemical adsorption), especially oxygen atoms, as compared to metallic atoms and noble gases (physical adsorption).

  7. Control of layer stacking in CVD graphene under quasi-static condition.

    Science.gov (United States)

    Subhedar, Kiran M; Sharma, Indu; Dhakate, Sanjay R

    2015-09-14

    The type of layer stacking in bilayer graphene has a significant influence on its electronic properties because of the contrast nature of layer coupling. Herein, different geometries of the reaction site for the growth of bilayer graphene by the chemical vapor deposition (CVD) technique and their effects on the nature of layer stacking are investigated. Micro-Raman mapping and curve fitting analysis confirmed the type of layer stacking for the CVD grown bilayer graphene. The samples grown with sandwiched structure such as quartz/Cu foil/quartz along with a spacer, between the two quartz plates to create a sealed space, resulted in Bernal or AB stacked bilayer graphene while the sample sandwiched without a spacer produced the twisted bilayer graphene. The contrast difference in the layer stacking is a consequence of the difference in the growth mechanism associated with different geometries of the reaction site. The diffusion dominated process under quasi-static control is responsible for the growth of twisted bilayer graphene in sandwiched geometry while surface controlled growth with ample and continual supply of carbon in sandwiched geometry along with a spacer, leads to AB stacked bilayer graphene. Through this new approach, an efficient technique is presented to control the nature of layer stacking. PMID:26245487

  8. A platform for large-scale graphene electronics--CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride.

    Science.gov (United States)

    Wang, Min; Jang, Sung Kyu; Jang, Won-Jun; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Ruoff, Rodney S; Song, Young Jae; Lee, Sungjoo

    2013-05-21

    Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication. PMID:23576235

  9. Designing nanoscale constructs from atomic thin sheets of graphene, boron nitride and gold nanoparticles for advanced material applications

    Science.gov (United States)

    Jasuja, Kabeer

    2011-12-01

    ' interaction with graphene, and applied to address the challenge of dispersing bare-surfaced GNPs for efficient liquid-phase catalysis. We also revisited the functionalization of graphene and present a non-invasive surface introduction of interfaceable moieties. Isostructural to graphene, ultrathin BN sheet is another atomic-thick nanomaterial possessing a highly diverse set of properties inconceivable from graphene. Exfoliating UTBNSs has been challenging due to their exceptional intersheet-bonding and chemical-inertness. To develop applications of BN monolayers and evolve research, a facile lab-scale approach was desired that can produce processable dispersions of BN monolayers. We demonstrated a novel chlorosulfonic acid based treatment that resulted in protonation assisted layer-by-layer exfoliation of BN monolayers with highest reported yields till date. Further, the BN monolayers exhibited extensively protonated N centers, which are utilized for chemically interfacing GNPs, demonstrating their ability to act as excellent nano-templates. The scientific details obtained from the research shown here will significantly support current research activities and greatly impact their future applications. Our research findings have been published in ACS Nano, Small, Journal of Physical Chemistry Letters, MRS Proceedings and have gathered >45 citations.

  10. Preservation of the Pt(100) surface reconstruction after growth of a continuous layer of graphene

    DEFF Research Database (Denmark)

    Nilsson, Louis; Andersen, Mie; Bjerre, Jacob; Balog, Richard; Hammer, Bjørk; Hornekær, Liv; Stensgaard, Ivan

    Scanning tunneling microscopy shows that a layer of graphene can be grown on the hex-reconstructed Pt(100) surface and that the reconstruction is preserved after growth. A continuous sheet of graphene can be grown across domain boundaries and step edges without loss of periodicity or change in...

  11. Electronic spin transport and spin precession in single graphene layers at room temperature

    NARCIS (Netherlands)

    Tombros, Nikolaos; Jozsa, Csaba; Popinciuc, Mihaita; Jonkman, Harry T.; van Wees, Bart J.

    2007-01-01

    Electronic transport in single or a few layers of graphene is the subject of intense interest at present. The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states, has led to the observation of new electronic tra

  12. Nanotribological properties of water films adsorbing atop, and absorbing below, graphene layers supported by metal substrates

    Science.gov (United States)

    Liu, Zijian; Curtis, C. K.; Stine, R.; Sheehan, P.; Krim, J.

    The tribological properties of graphite, a common lubricant with known sensitivity to the presence of water, have been studied extensively at the macroscopic and microscopic scales. Although far less attention has been devoted to the tribological properties of graphene, it has been established that the tribological response to the presence of water is dissimilar from that of graphite. We report here a quartz crystal microbalance study of the nanotribological properties of water films adsorbed/absorbed on graphene layers prepared by either chemical decomposition on nickel(111) substrates or transfer of freestanding graphene layers to aluminum substrates. Sliding friction levels of the water films were also measured for metal surfaces in the absence of a graphene layer. We observe very high friction levels for water adsorbed atop graphene on Ni(111) and very low levels for water on aluminum. For the case of graphene/aluminum, the data indicate that the water is absorbing between the graphene layer and the aluminum. Dissipation levels moreover indicate the presence of an interstitial water increases sliding friction between the graphene and the aluminum substrate Work supported by NSF and NRL.

  13. Graphene and Graphene Nanomesh Spintronics

    OpenAIRE

    Junji Haruyama

    2013-01-01

    Spintronics, which manipulate spins but not electron charge, are highly valued as energy and thermal dissipationless systems. A variety of materials are challenging the realization of spintronic devices. Among those, graphene, a carbon mono-atomic layer, is very promising for efficient spin manipulation and the creation of a full spectrum of beyond-CMOS spin-based nano-devices. In the present article, the recent advancements in graphene spintronics are reviewed, introducing the observation of...

  14. Synthesis of ethanol-soluble few-layer graphene nanosheets for flexible and transparent conducting composite films

    International Nuclear Information System (INIS)

    We report a facile method of preparing few-layer graphene nanosheets (FLGs), which can be soluble in ethanol. Atomic force microscopy and high-resolution transmission electron microscopy studies reveal that FLGs have average thicknesses in the range of 2.6-2.8 nm, corresponding to 8-9 layers. A graphene/nafion composite film has a sheet resistance of 9.70 kΩ/sq at the transmittance of 74.5% (at 550 nm) while the nafion film on polyethylene terephthalate has a sheet resistance of 128 kΩ/sq at transmittance of 90.0%. For the cycling/bending test, almost no change in resistance was exhibited when the film was bent at an angle up to 1400, and no obvious deviation in resistance could be found after 100 bending cycles was applied. In addition, an FLGs-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) composite layer was demonstrated as the effective hole transporting layer to improve the hole transporting ability in an organic photovoltaic device, with which the power conversion efficiency was enhanced from 3.10% to 3.70%. The results demonstrated the promising applications of FLGs on graphene-based electronics, such as transparent electrode and flexible conducting film.

  15. Ultrathin Ultra-broadband Electro-Absorption Modulator based on Few-layer Graphene based Anisotropic Metamaterial

    CERN Document Server

    Sayem, Ayed Al; Jahangir, Ifat; Rahman, Md Saifur

    2015-01-01

    In this article, a few-layered graphene-dielectric multilayer (metamaterial) electro-optic modulator has been proposed in the mid and far infrared range that works on electro-absorption mechanism. Graphene, both mono layer and few layer, is an actively tunable optical material that allows control of inter-band and intra-band transition by tuning its chemical potential. Utilizing this unique feature of graphene, we propose a multilayer graphene dielectric stack where few layer graphene is preferred over mono layer graphene. Although the total thickness of the stack still remains in the nanometer range, this device can exhibit superior performances in terms of (i) high modulation depth, (ii) ultra-broadband performance, (iii) ultra-low insertion loss due to inherent metamaterial properties, (iv) nanoscale footprint, (v) polarization independence and (vi) capability of being integrated to a silicon waveguide. Interestingly, these superior performances, achievable by using few layer graphene with carefully design...

  16. USE OF ATOMIC LAYER DEPOSITION OF FUNCTIONALIZATION OF NANOPOROUS BIOMATERIALS

    Energy Technology Data Exchange (ETDEWEB)

    Brigmon, R.; Narayan, R.; Adiga, S.; Pellin, M.; Curtiss, L.; Stafslien, S.; Chisholm, B.; Monteiro-Riviere, N.; Elam, J.

    2010-02-08

    Due to its chemical stability, uniform pore size, and high pore density, nanoporous alumina is being investigated for use in biosensing, drug delivery, hemodialysis, and other medical applications. In recent work, we have examined the use of atomic layer deposition for coating the surfaces of nanoporous alumina membranes. Zinc oxide coatings were deposited on nanoporous alumina membranes using atomic layer deposition. The zinc oxide-coated nanoporous alumina membranes demonstrated antimicrobial activity against Escherichia coli and Staphylococcus aureus bacteria. These results suggest that atomic layer deposition is an attractive technique for modifying the surfaces of nanoporous alumina membranes and other nanostructured biomaterials.

  17. Enhanced model for determining the number of graphene layers and their distribution from X-ray diffraction data

    Directory of Open Access Journals (Sweden)

    Beti Andonovic

    2015-11-01

    Full Text Available A model consisting of an equation that includes graphene thickness distribution is used to calculate theoretical 002 X-ray diffraction (XRD peak intensities. An analysis was performed upon graphene samples produced by two different electrochemical procedures: electrolysis in aqueous electrolyte and electrolysis in molten salts, both using a nonstationary current regime. Herein, the model is enhanced by a partitioning of the corresponding 2θ interval, resulting in significantly improved accuracy of the results. The model curves obtained exhibit excellent fitting to the XRD intensities curves of the studied graphene samples. The employed equation parameters make it possible to calculate the j-layer graphene region coverage of the graphene samples, and hence the number of graphene layers. The results of the thorough analysis are in agreement with the calculated number of graphene layers from Raman spectra C-peak position values and indicate that the graphene samples studied are few-layered.

  18. Large scale atomistic simulation of single-layer graphene growth on Ni(111) surface: molecular dynamics simulation based on a new generation of carbon-metal potential.

    Science.gov (United States)

    Xu, Ziwei; Yan, Tianying; Liu, Guiwu; Qiao, Guanjun; Ding, Feng

    2016-01-14

    To explore the mechanism of graphene chemical vapor deposition (CVD) growth on a catalyst surface, a molecular dynamics (MD) simulation of carbon atom self-assembly on a Ni(111) surface based on a well-designed empirical reactive bond order potential was performed. We simulated single layer graphene with recorded size (up to 300 atoms per super-cell) and reasonably good quality by MD trajectories up to 15 ns. Detailed processes of graphene CVD growth, such as carbon atom dissolution and precipitation, formation of carbon chains of various lengths, polygons and small graphene domains were observed during the initial process of the MD simulation. The atomistic processes of typical defect healing, such as the transformation from a pentagon into a hexagon and from a pentagon-heptagon pair (5|7) to two adjacent hexagons (6|6), were revealed as well. The study also showed that higher temperature and longer annealing time are essential to form high quality graphene layers, which is in agreement with experimental reports and previous theoretical results. PMID:26658834

  19. Coatings of nanostructured pristine graphene-IrOx hybrids for neural electrodes: Layered stacking and the role of non-oxygenated graphene.

    Science.gov (United States)

    Pérez, E; Lichtenstein, M P; Suñol, C; Casañ-Pastor, N

    2015-10-01

    The need to enhance charge capacity in neural stimulation-electrodes is promoting the formation of new materials and coatings. Among all the possible types of graphene, pristine graphene prepared by graphite electrochemical exfoliation, is used in this work to form a new nanostructured IrOx-graphene hybrid (IrOx-eG). Graphene is stabilized in suspension by IrOx nanoparticles without surfactants. Anodic electrodeposition results in coatings with much smaller roughness than IrOx-graphene oxide. Exfoliated pristine graphene (eG), does not electrodeposit in absence of iridium, but IrOx-nanoparticle adhesion on graphene flakes drives the process. IrOx-eG has a significantly different electronic state than graphene oxide, and different coordination for carbon. Electron diffraction shows the reflection features expected for graphene. IrOx 1-2 nm cluster/nanoparticles are oxohydroxo-species and adhere to 10nm graphene platelets. eG induces charge storage capacity values five times larger than in pure IrOx, and if calculated per carbon atom, this enhancement is one order magnitude larger than the induced by graphene oxide. IrOx-eG coatings show optimal in vitro neural cell viability and function as cell culture substrates. The fully straightforward electrochemical exfoliation and electrodeposition constitutes a step towards the application of graphene in biomedical systems, expanding the knowledge of pristine graphene vs. graphene oxide, in bioelectrodes. PMID:26117758

  20. Electron ionization and spin polarization control of Fe atom adsorbed graphene irradiated by a femtosecond laser

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Dong [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Jiang, Lan, E-mail: jianglan@bit.edu.cn [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Wang, Feng; Li, Xin [Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081 (China); Qu, Liangti [Key Laboratory of Cluster Science, Ministry of Education, School of Chemistry, Beijing Institute of Technology, Beijing 100081 (China); Lu, Yongfeng [Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511 (United States)

    2015-10-23

    We investigate the structural properties and ionized spin electrons of an Fe–graphene system, in which the time-dependent density functional theory (TDDFT) within the generalized gradient approximation is used. The electron dynamics, including electron ionization and ionized electron spin polarization, is described for Fe atom adsorbed graphene under femtosecond laser irradiation. The theoretical results show that the electron ionization and ionized electron spin polarization are sensitive to the laser parameters, such as the incident angle and the peak intensity. The spin polarization presents the maximum value under certain laser parameters, which may be used as a source of spin-polarized electrons. - Highlights: • The structural properties of Fe–graphene system are investigated. • The electron dynamics of Fe–graphene system under laser irradiation are described. • The Fe–graphene system may be used as a source of spin-polarized electrons.

  1. Electron ionization and spin polarization control of Fe atom adsorbed graphene irradiated by a femtosecond laser

    International Nuclear Information System (INIS)

    We investigate the structural properties and ionized spin electrons of an Fe–graphene system, in which the time-dependent density functional theory (TDDFT) within the generalized gradient approximation is used. The electron dynamics, including electron ionization and ionized electron spin polarization, is described for Fe atom adsorbed graphene under femtosecond laser irradiation. The theoretical results show that the electron ionization and ionized electron spin polarization are sensitive to the laser parameters, such as the incident angle and the peak intensity. The spin polarization presents the maximum value under certain laser parameters, which may be used as a source of spin-polarized electrons. - Highlights: • The structural properties of Fe–graphene system are investigated. • The electron dynamics of Fe–graphene system under laser irradiation are described. • The Fe–graphene system may be used as a source of spin-polarized electrons

  2. Coatings of nanostructured pristine graphene-IrOx hybrids for neural electrodes: Layered stacking and the role of non-oxygenated graphene

    Energy Technology Data Exchange (ETDEWEB)

    Pérez, E. [Institut Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, E-08193, Bellaterra, Barcelona (Spain); Lichtenstein, M.P.; Suñol, C. [Institut d' Investigacions Biomèdiques de Barcelona (IIBB-CSIC), Institut d' Investigacions Biomèdiques August Pi i Sunyer (IDIBAPS), c/Rosselló 161, 08036 Barcelona (Spain); Casañ-Pastor, N., E-mail: nieves@icmab.es [Institut Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, E-08193, Bellaterra, Barcelona (Spain)

    2015-10-01

    The need to enhance charge capacity in neural stimulation-electrodes is promoting the formation of new materials and coatings. Among all the possible types of graphene, pristine graphene prepared by graphite electrochemical exfoliation, is used in this work to form a new nanostructured IrOx–graphene hybrid (IrOx–eG). Graphene is stabilized in suspension by IrOx nanoparticles without surfactants. Anodic electrodeposition results in coatings with much smaller roughness than IrOx–graphene oxide. Exfoliated pristine graphene (eG), does not electrodeposit in absence of iridium, but IrOx-nanoparticle adhesion on graphene flakes drives the process. IrOx–eG has a significantly different electronic state than graphene oxide, and different coordination for carbon. Electron diffraction shows the reflection features expected for graphene. IrOx 1–2 nm cluster/nanoparticles are oxohydroxo-species and adhere to 10 nm graphene platelets. eG induces charge storage capacity values five times larger than in pure IrOx, and if calculated per carbon atom, this enhancement is one order magnitude larger than the induced by graphene oxide. IrOx–eG coatings show optimal in vitro neural cell viability and function as cell culture substrates. The fully straightforward electrochemical exfoliation and electrodeposition constitutes a step towards the application of graphene in biomedical systems, expanding the knowledge of pristine graphene vs. graphene oxide, in bioelectrodes. - Highlights: • Pristine Graphene is incorporated in coatings as nanostructured IrOx–eG hybrid. • IrOx-nanoparticles drive the electrodeposition of graphene. • Hybrid CSC is one order of magnitude the charge capacity of IrOx. • Per carbon atom, the CSC increase is 35 times larger than for graphene oxide. • Neurons are fully functional on the coating.

  3. Coatings of nanostructured pristine graphene-IrOx hybrids for neural electrodes: Layered stacking and the role of non-oxygenated graphene

    International Nuclear Information System (INIS)

    The need to enhance charge capacity in neural stimulation-electrodes is promoting the formation of new materials and coatings. Among all the possible types of graphene, pristine graphene prepared by graphite electrochemical exfoliation, is used in this work to form a new nanostructured IrOx–graphene hybrid (IrOx–eG). Graphene is stabilized in suspension by IrOx nanoparticles without surfactants. Anodic electrodeposition results in coatings with much smaller roughness than IrOx–graphene oxide. Exfoliated pristine graphene (eG), does not electrodeposit in absence of iridium, but IrOx-nanoparticle adhesion on graphene flakes drives the process. IrOx–eG has a significantly different electronic state than graphene oxide, and different coordination for carbon. Electron diffraction shows the reflection features expected for graphene. IrOx 1–2 nm cluster/nanoparticles are oxohydroxo-species and adhere to 10 nm graphene platelets. eG induces charge storage capacity values five times larger than in pure IrOx, and if calculated per carbon atom, this enhancement is one order magnitude larger than the induced by graphene oxide. IrOx–eG coatings show optimal in vitro neural cell viability and function as cell culture substrates. The fully straightforward electrochemical exfoliation and electrodeposition constitutes a step towards the application of graphene in biomedical systems, expanding the knowledge of pristine graphene vs. graphene oxide, in bioelectrodes. - Highlights: • Pristine Graphene is incorporated in coatings as nanostructured IrOx–eG hybrid. • IrOx-nanoparticles drive the electrodeposition of graphene. • Hybrid CSC is one order of magnitude the charge capacity of IrOx. • Per carbon atom, the CSC increase is 35 times larger than for graphene oxide. • Neurons are fully functional on the coating

  4. Single layer nano graphene platelets derived from graphite nanofibres

    Science.gov (United States)

    Huang, Kai; Delport, Géraud; Orcin-Chaix, Lucile; Drummond, Carlos; Lauret, Jean-Sebastien; Penicaud, Alain

    2016-04-01

    Solutions of calibrated nanographenides (negatively charged nanographenes) are obtained by dissolution of graphite nanofibre intercalation compounds (GNFICs). Deposits show homogeneous unfolded nanographene platelets of 1 to 2 layers thickness and 10 nm lateral size, evidenced by atomic force microscopy and Raman spectroscopy. Upon oxidation, nanographenide solutions exhibit strong photoluminescence.Solutions of calibrated nanographenides (negatively charged nanographenes) are obtained by dissolution of graphite nanofibre intercalation compounds (GNFICs). Deposits show homogeneous unfolded nanographene platelets of 1 to 2 layers thickness and 10 nm lateral size, evidenced by atomic force microscopy and Raman spectroscopy. Upon oxidation, nanographenide solutions exhibit strong photoluminescence. Electronic supplementary information (ESI) available: Raman, SEM, TEM and XPS characterization of the raw nanofibres, detailed XPS spectra analysis of deposits from GNFIC/THF and GNFIC/NMP solutions, Raman and AFM characterization of fresh and aged solutions of nanofibres obtained from 3 different suppliers. See DOI: 10.1039/c6nr01512c

  5. Synthesis of Few-Layer Graphene Using DC PE-CVD

    Science.gov (United States)

    Kim, Jeong Hyuk; Castro, Edward Joseph D.; Hwang, Yong Gyoo; Lee, Choong Hun

    2011-12-01

    Few layer graphene (FLG) had been successfully grown on polycrystalline Ni films or foils on a large scale using DC Plasma Enhanced Chemical Vapor Deposition (DC PE-CVD) as a result of the Raman spectra drawn out of the sample. The size of graphene films is dependent on the area of the Ni film as well as the DC PE-CVD chamber size. Synthesis time has an effect on the quality of graphene produced. However, further analysis and experiments must be pursued to further identify the optimum settings and conditions of producing better quality graphene. Applied plasma voltage on the other hand, had an influence on the minimization of defects in the graphene grown. It has also presented a method of producing a free standing PMMA/graphene membrane on a FeCl3(aq) solution which could then be transferred to a desired substrate.

  6. Seeing graphene-based sheets

    Directory of Open Access Journals (Sweden)

    Jaemyung Kim

    2010-03-01

    Full Text Available Graphene-based sheets such as graphene, graphene oxide and reduced graphene oxide have stimulated great interest due to their promising electronic, mechanical and thermal properties. Microscopy imaging is indispensable for characterizing these single atomic layers, and oftentimes is the first measure of sample quality. This review provides an overview of current imaging techniques for graphene-based sheets and highlights a recently developed fluorescence quenching microscopy technique that allows high-throughput, high-contrast imaging of graphene-based sheets on arbitrary substrate and even in solution.

  7. Temperature-dependent dielectric functions in atomically thin graphene, silicene, and arsenene

    International Nuclear Information System (INIS)

    The dielectric functions of atomically thin graphene, silicene, and arsenene have been investigated as a function of temperature. With zero energy gap, more carriers in graphene and silicene are thermally excited as temperature increases and intraband transition strengthens, resulting in the strengthened absorption peak. Yet with large energy gap, interband transition dominates optical absorption of arsenene but it reduces as lattice vibration enhances, inducing the redshift and decreased absorption peak. To validate the theoretical method, the calculated optical constants of isolated graphene are compared with ellipsometry results and demonstrate good agreement

  8. The Structural and Mechanical Properties of Graphene functionalized by Atomic Oxygen

    Directory of Open Access Journals (Sweden)

    I.K. Petrushenko

    2014-01-01

    Full Text Available In this paper, the structural and mechanical properties of graphene functionalized by atomic oxygen are investigated in the framework of the density functional theory. It was determined that the addition of oxygen leads to the deformation of the native graphene structure and reduction of its elastic properties. Here, a small functionalization leads to small structural changes, and, at the same time, to reduction of the Young's modulus of graphene. Larger functionalization causes structural deformation, with no significant changes of Young's modulus. It is shown that induced structural reorganization of the investigated models does not cause a rupture.

  9. On nonlinear dynamics of a dipolar exciton BEC in two-layer graphene

    International Nuclear Information System (INIS)

    The nonlinear dynamics of a Bose–Einstein condensate (BEC) of dipolar excitons in two-layer graphene is studied. It is demonstrated that a steady turbulent state is formed in this system. A comparison between the dynamics of the exciton BEC in two-layer graphene and those in GaAs/AlGaAs coupled quantum wells shows that turbulence is a general effect in a BEC.

  10. Nanoscale strain engineering of graphene and graphene-based devices

    OpenAIRE

    Yeh, N. -C.; Hsu, C.-C.; Teague, M. L.; Wang, J.-Q.; Boyd, D A; Chen, C.-C.

    2016-01-01

    Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation f...

  11. Quantum transport in graphene

    NARCIS (Netherlands)

    Oostinga, J.B.

    2010-01-01

    After the experimental discovery of graphene -a single atomic layer of graphite- a scientific rush started to explore graphene’s electronic behaviour. Graphene is a fascinating two-dimensional electronic system, because its electrons behave as relativistic particles. Moreover, it is a promising mate

  12. Nonlinear dynamics of bi-layered graphene sheet, double-walled carbon nanotube and nanotube bundle

    Science.gov (United States)

    Gajbhiye, Sachin O.; Singh, S. P.

    2016-05-01

    Due to strong van der Waals (vdW) interactions, the graphene sheets and nanotubes stick to each other and form clusters of these corresponding nanostructures, viz. bi-layered graphene sheet (BLGS), double-walled carbon nanotube (DWCNT) and nanotube bundle (NB) or ropes. This research work is concerned with the study of nonlinear dynamics of BLGS, DWCNT and NB due to nonlinear interlayer vdW forces using multiscale atomistic finite element method. The energy between two adjacent carbon atoms is represented by the multibody interatomic Tersoff-Brenner potential, whereas the nonlinear interlayer vdW forces are represented by Lennard-Jones 6-12 potential function. The equivalent nonlinear material model of carbon-carbon bond is used to model it based on its force-deflection relation. Newmark's algorithm is used to solve the nonlinear matrix equation governing the motion of the BLGS, DWCNT and NB. An impulse and harmonic excitations are used to excite these nanostructures under cantilevered, bridged and clamped boundary conditions. The frequency responses of these nanostructures are computed, and the dominant resonant frequencies are identified. Along with the forced vibration of these structures, the eigenvalue extraction problem of armchair and zigzag NB is also considered. The natural frequencies and corresponding mode shapes are extracted for the different length and boundary conditions of the nanotube bundle.

  13. Work function of few layer graphene covered nickel thin films measured with Kelvin probe force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Eren, B. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland); Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Gysin, U.; Marot, L., E-mail: Laurent.marot@unibas.ch; Glatzel, Th.; Steiner, R.; Meyer, E. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

    2016-01-25

    Few layer graphene and graphite are simultaneously grown on a ∼100 nm thick polycrystalline nickel film. The work function of few layer graphene/Ni is found to be 4.15 eV with a variation of 50 meV by local measurements with Kelvin probe force microscopy. This value is lower than the work function of free standing graphene due to peculiar electronic structure resulting from metal 3d-carbon 2p(π) hybridization.

  14. Work function of few layer graphene covered nickel thin films measured with Kelvin probe force microscopy

    International Nuclear Information System (INIS)

    Few layer graphene and graphite are simultaneously grown on a ∼100 nm thick polycrystalline nickel film. The work function of few layer graphene/Ni is found to be 4.15 eV with a variation of 50 meV by local measurements with Kelvin probe force microscopy. This value is lower than the work function of free standing graphene due to peculiar electronic structure resulting from metal 3d-carbon 2p(π) hybridization

  15. Tunable electromagnetic chirality induced by graphene inclusions in multi-layered metamaterials

    CERN Document Server

    Rizza, Carlo; Ciattoni, Alessandro

    2013-01-01

    We theoretically investigate the electromagnetic response of a novel class of multi-layered metamaterials obtained by alternating graphene sheets and dielectric layers, the whole structure not exhibiting a plane of reflection symmetry along the stacking direction. We show that the electromagnetic response of the structure is characterized by a magneto-electric coupling described by an effective chiral parameter. Exploiting the intrinsic tunability of the graphene-light coupling, we prove that one can tune both the dielectric and the chiral electromagnetic response by varying the graphene chemical potential through external voltage gating.

  16. Direct Measurement of the Fermi Energy in Graphene Using a Double Layer Structure

    OpenAIRE

    Kim, Seyoung; Jo, Insun; Dillen, D. C.; Ferrer, D. A.; Fallahazad, B.; Z. Yao; Banerjee, S K; Tutuc, E.

    2011-01-01

    We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening in graphene. We find that the N=0 Landau level broadening is large...

  17. Graphene in silicon photovoltaic cells

    OpenAIRE

    Tap Béteille, Hélène; Caussat, Brigitte; Vergnes, Hugues; Trinsoutrot, Pierre; Conédéra, Véronique; Guerin, François; Gessinn, Frédéric; Grisolia, Jérémie; Launay, Jérôme; Arguel, Philippe

    2012-01-01

    Graphene is an allotrope of carbon. Its structure is one-atom-thick planar sheets of carbon atoms that are densely packed in a honeycomb crystal lattice [1]. The richness of optical and electronic properties of graphene attracts enormous interest. Its true potential seems to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited. The optical absorption of graphene layers is proportional to the number of lay...

  18. Interaction and Dynamics of add-atoms with 2-Dimensional Structures : (PAC studies of mono- and low- number of stacking layers)

    CERN Multimedia

    The interaction and dynamics of add-atoms with graphene, graphene-derivate structures and, later, MoSi$_2$, two-dimensional – single and few – atomic layers will be studied with the Perturbed Angular Correlation – PAC – technique. Graphene is also envisaged as new platform for growing semiconductor nanostructures devices, such as quantum dots and as a particularly powerful catalyst. Understanding nucleation of nanostructures and clusters on graphene and related phases in wet conditions as they are used in chemical methods in research and industry require complementary studies. These systems shall therefore be studied systematically using radioactive probe atomsattaching via a transfer media (e.g., water in catalysis process) or being deposited with soft-landing techniques under vacuum and UHV conditions, as is proportionated by the ASPIC setup at ISOLDE. The hyperfine fields obtained under different environments are expected to reveal basic information on the rich atomistic and physical mechanisms ass...

  19. Graphene Spin Valve Devices

    OpenAIRE

    Hill, E. W.; Geim, A. K.; Novoselov, K.; Schedin, F.; Blake, P.

    2007-01-01

    Graphene - a single atomic layer of graphite - is a recently-found two-dimensional form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to inject polarized spins into graphene and a 10% change in resistance has been observed as the electrodes switch from the parallel to the antiparallel state. This coupled with the fact that a field effect electrode can modulate the conductivity of these graphene...

  20. Phonon Transport in Graphene

    OpenAIRE

    Denis L. Nika; Balandin, Alexander A.

    2012-01-01

    Properties of phonons - quanta of the crystal lattice vibrations - in graphene have attracted strong attention of the physics and engineering communities. Acoustic phonons are the main heat carriers in graphene near room temperature while optical phonons are used for counting the number of atomic planes in Raman experiments with few-layer graphene. It was shown both theoretically and experimentally that transport properties of phonons, i.e. energy dispersion and scattering rates, are substant...

  1. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0±0.2x1011/cm2, and become a bulk insulator at a thickness of ten quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

  2. Simulation of High Density Lipoprotein Behavior on a Few Layer Graphene Undergoing Non-Uniform Mechanical Load.

    Science.gov (United States)

    Glukhova, Olga E; Prytkova, Tatiana R; Savostyanov, George V

    2016-04-21

    Effect of a nonuniform external mechanical load on high density lipoprotein (HDL) in aqueous medium was investigated using course-grained molecular dynamics simulations. The nonuniform load was achieved by a few layer graphene on one side and closed single-walled carbon nanotube (SWNT) (7, 7) on the opposite side of lipoprotein. The tube had a diameter of 1 nm and was oriented perpendicularly to the graphene. HDL was located between them. The tube was approaching to HDL on graphene deforming it. We considered two cases of the tube movement with velocities of 20 and 5 m/s. Coarse-grained (CG) molecular dynamics with application of the MARTINI force field for HDL and coarse-grained model with an all-atom (AA)/CG mapping ratio of 1.5 for carbon nanotube (CNT) (each CG bead was modeled by the 4-site CG benzene) were used. Coarse-grained model of HDL was received by method of self-assembly. HDL was static but not fixed that gave the possibility to compensate its external influence in some way. It was established that in water medium HDL interacted with graphene substrate. It was established that in water HDL interacts with graphene substrate, slightly flattening but retaining its shape of the whole. It was also observed that during the calculations HDL partially dodged nanotube. Lipoprotein belts unfolded on the graphene substrate in the way of the best compensation for the impact of nanotubes. Finally, we observed that the approaching tube has passed through the less dense medium of dipalmitoylphosphatidylcholine (DPPC) and its pressure on the macromolecule decreased. Inhomogeneity of the external exposure deformed HDL at approximately 10-50%. The character of deformation demonstrated that lipoprotein has viscoelastic properties similar to a fluid. The discovered ability of lipoprotein may help to establish mechanism of interaction of lipoproteins with arterial walls and dynamic behavior of lipoproteins in arterial intima. PMID:27046673

  3. Atomic-Layer Engineering of Oxide Superconductors

    OpenAIRE

    Teherani, Ferechteh H.; Look, David C.; Rogers, David J.; Bollinger, A.T.; Eckstein, J. N.; Dubuis, Guy; Pavuna, Davor; Bozovic, I

    2012-01-01

    Molecular beam epitaxy technique has enabled synthesis of atomically smooth thin films, multilayers, and superlattices of cuprates and other complex oxides. Such heterostructures show high temperature superconductivity and enable novel experiments that probe the basic physics of this phenomenon. For example, it was established that high temperature superconductivity and anti-ferromagnetic phases separate on Ångström scale, while the pseudo-gap state apparently mixes with high temperature su...

  4. Energetics, diffusion, and magnetic properties of cobalt atom in a monolayer graphene: An ab initio study

    International Nuclear Information System (INIS)

    We use ab initio methods to study the binding, diffusion, and magnetic properties of cobalt atom embedded in graphene vacancies. We investigate the diffusion of Co-monovacancy (Co-MV) and Co-divacancy (Co-DV) defect complexes, and determine the minimum energy path (MEP), as well as the activation energy barrier of migration. We obtained similar activation energy barriers, of ∼5.8 eV, for Co-MV and Co-DV diffusion, respectively. Our calculations also suggest that, at electron–irradiation energy of 200 keV as used in a related experiment, the maximum energy transfer to the Co atom, of approximately 9.0 eV is sufficiently high to break metal-carbon bonding. The incident electron energy is also high enough to displace graphene's carbon atoms from their lattice positions. The breaking of metal-carbon bonding and the displacement of graphene atoms may act to facilitate the migration of Co. We conclude therefore that the detrapping and diffusion of cobalt as observed experimentally is likely to be radiation-induced, similar to what has been observed for Au and Fe in electron-irradiated graphene. Furthermore, we show that Co migration in graphene is such that its magnetic moment varies along the diffusion path. The magnetic moment of Co is consistently higher in Co-DV diffusion when compared to that of Co-MV diffusion

  5. Deformation sensor based on polymer-supported discontinuous graphene multi-layer coatings

    Energy Technology Data Exchange (ETDEWEB)

    Carotenuto, G.; Schiavo, L.; Romeo, V.; Nicolais, L. [Institute for Composite and Biomedical Materials, National Research Council, Piazzale E. Fermi, 1, 80055 Portici (Italy)

    2014-05-15

    Graphene can be conveniently used in the modification of polymer surfaces. Graphene macromolecules are perfectly transparent to the visible light and electrically conductive, consequently these two properties can be simultaneously provided to polymeric substrates by surface coating with thin graphene layers. In addition, such coating process provides the substrates of: water-repellence, higher surface hardness, low-friction, self-lubrication, gas-barrier properties, and many other functionalities. Polyolefins have a non-polar nature and therefore graphene strongly sticks on their surface. Nano-crystalline graphite can be used as graphene precursor in some chemical processes (e.g., graphite oxide synthesis by the Hummer method), in addition it can be directly applied to the surface of a polyolefin substrate (e.g., polyethylene) to cover it by a thin graphene multilayer. In particular, the nano-crystalline graphite perfectly exfoliate under the application of a combination of shear and friction forces and the produced graphene single-layers perfectly spread and adhere on the polyethylene substrate surface. Such polymeric materials can be used as ITO (indium-tin oxide) substitute and in the fabrication of different electronic devices. Here the fabrication of transparent resistive deformation sensors based on low-density polyethylene films coated by graphene multilayers is described. Such devices are very sensible and show a high reversible and reproducible behavior.

  6. Deformation sensor based on polymer-supported discontinuous graphene multi-layer coatings

    International Nuclear Information System (INIS)

    Graphene can be conveniently used in the modification of polymer surfaces. Graphene macromolecules are perfectly transparent to the visible light and electrically conductive, consequently these two properties can be simultaneously provided to polymeric substrates by surface coating with thin graphene layers. In addition, such coating process provides the substrates of: water-repellence, higher surface hardness, low-friction, self-lubrication, gas-barrier properties, and many other functionalities. Polyolefins have a non-polar nature and therefore graphene strongly sticks on their surface. Nano-crystalline graphite can be used as graphene precursor in some chemical processes (e.g., graphite oxide synthesis by the Hummer method), in addition it can be directly applied to the surface of a polyolefin substrate (e.g., polyethylene) to cover it by a thin graphene multilayer. In particular, the nano-crystalline graphite perfectly exfoliate under the application of a combination of shear and friction forces and the produced graphene single-layers perfectly spread and adhere on the polyethylene substrate surface. Such polymeric materials can be used as ITO (indium-tin oxide) substitute and in the fabrication of different electronic devices. Here the fabrication of transparent resistive deformation sensors based on low-density polyethylene films coated by graphene multilayers is described. Such devices are very sensible and show a high reversible and reproducible behavior

  7. Temperature dependence of proximity-induced supercurrent in single and multi-layer graphene

    Science.gov (United States)

    Kanda, Akinobu; Goto, Hidenori; Tomori, Hikari; Tanaka, Sho; Ootuka, Youiti; Tsukagoshi, Kazuhito; Hayashi, Masahiko; Yoshioka, Hideo

    2010-03-01

    Graphene is an attracting material for the superconducting proximity effect. In single layer graphene (SLG), the peculiar band structure leads to the relativistic Josephson effect, while in multilayer graphene (MLG), the layered structure with large modulation of carrier density from negative to positive values provides a novel situation of conventional proximity effect. Here we present experimental study on superconducting proximity effect in SLG and MLG. For SLG with junction length of 220 nm, we observed gate-voltage dependent critical supercurrent Ic, and its temperature dependences for all gate voltages were well explained by a conventional theory for short and dirty junctions (KO1 theory). On the other hand, in MLG junctions, Ic(T) (-(T/T0)^2), where T0 is a sample- and gate- dependent constant. This behavior can be explained by a successive transition model, in which a graphene layer with larger carrier density has a higher temperature for the onset of supercurrent.

  8. Absorption of THz electromagnetic wave in two mono-layers of graphene

    Science.gov (United States)

    Reynolds, Cole B.; Shoufie Ukhtary, M.; Saito, Riichiro

    2016-05-01

    Nearly 100% absorption of an electromagnetic (EM) wave in terahertz (THz) frequency is proposed for a system consisting of two mono-layers of graphene. Here, we demonstrate that the system can almost perfectly absorb an EM wave with frequency of 2 THz, even though we have a low electron mobility of roughly 1000 cm2  Vs‑1. The absorption probability is calculated by using the transfer matrix method. We show that the two mono-layers of the graphene system is needed to obtain nearly 100% absorption when the graphene has a relatively low Fermi energy. The absorption dependence on the distance between the graphene layers is also discussed.

  9. Morphology and properties of the graphene layer on the copper substrate

    Directory of Open Access Journals (Sweden)

    Pietrzak Katarzyna

    2015-12-01

    Full Text Available The aim of the work presented in the article was to clarify controversial comments about anti-corrosion and mechanical properties of graphene coatings, deposited on copper substrates. It was designed special experimental cycle comprising: preparation of graphene forms and copper, the observation of layers Cu / GO (rGO after the thermal reduction processes and oxidative test in air at 150°C temperature and 350 h in time. The resulting coatings and graphene layers were subjected to tribological test for hardness. The observed differences in the continuity of the coverage copper surface by graphene forms, allowed to understand the macroscopic effect of increased hardness and wear resistance layers rGO/Cu.

  10. Manipulating absorption and diffusion of H atom on graphene by mechanical strain

    Directory of Open Access Journals (Sweden)

    Ming Yang

    2011-09-01

    Full Text Available Effects of the tensile strain on absorption and diffusion of hydrogen atoms on graphene have been studied by first-principles calculations. Our calculations suggested that there exists a barrier of 0.22 eV for H atom to diffuse from free space to graphene. The barrier originates from the transition of the hybridization of the H-binded carbon atom in graphene from sp2 to sp3, and is robust against the tensile strain. It was also found that, first, the in-plane diffusion of H atoms on graphene is unlikely to happen at low temperature due to the high barrier without or with strain, and second, the tensile strain along the armchair direction greatly decreases the out-plane diffusion barrier of H atoms, making it possible at low temperature. In particular, when the armchair strain is moderate (<10%, we found that the out-plane diffusion of H atoms likely to happen by diffusing through C-C bonds, and for relatively large armchair strain around 15%, the out-plane diffusion will happen though the center of the benzene ring.

  11. Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.

    Science.gov (United States)

    Liu, Yingnan; Ghosh, Rudresh; Wu, Di; Ismach, Ariel; Ruoff, Rodney; Lai, Keji

    2014-08-13

    The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area synthesis of highly crystalline monolayers with a low density of electronically active defects is imperative. Here, we demonstrate the electrical imaging of dendritic ad-layers and grain boundaries in monolayer molybdenum disulfide (MoS2) grown by a vapor transport technique using microwave impedance microscopy. The micrometer-sized precipitates in our films, which appear as a second layer of MoS2 in conventional height and optical measurements, show ∼ 2 orders of magnitude higher conductivity than that of the single layer. The zigzag grain boundaries, on the other hand, are shown to be more resistive than the crystalline grains, consistent with previous studies. Our ability to map the local electrical properties in a rapid and nondestructive manner is highly desirable for optimizing the growth process of large-scale MoS2 atomic layers. PMID:25019334

  12. Three-dimensional spirals of atomic layered MoS2.

    Science.gov (United States)

    Zhang, Liming; Liu, Kaihui; Wong, Andrew Barnabas; Kim, Jonghwan; Hong, Xiaoping; Liu, Chong; Cao, Ting; Louie, Steven G; Wang, Feng; Yang, Peidong

    2014-11-12

    Atomically thin two-dimensional (2D) layered materials, including graphene, boron nitride, and transition metal dichalcogenides (TMDs), can exhibit novel phenomena distinct from their bulk counterparts and hold great promise for novel electronic and optoelectronic applications. Controlled growth of such 2D materials with different thickness, composition, and symmetry are of central importance to realize their potential. In particular, the ability to control the symmetry of TMD layers is highly desirable because breaking the inversion symmetry can lead to intriguing valley physics, nonlinear optical properties, and piezoelectric responses. Here we report the first chemical vapor deposition (CVD) growth of spirals of layered MoS2 with atomically thin helical periodicity, which exhibits a chiral structure and breaks the three-dimensional (3D) inversion symmetry explicitly. The spirals composed of tens of connected MoS2 layers with decreasing areas: each basal plane has a triangular shape and shrinks gradually to the summit when spiraling up. All the layers in the spiral assume an AA lattice stacking, which is in contrast to the centrosymmetric AB stacking in natural MoS2 crystals. We show that the noncentrosymmetric MoS2 spiral leads to a strong bulk second-order optical nonlinearity. In addition, we found that the growth of spirals involves a dislocation mechanism, which can be generally applicable to other 2D TMD materials. PMID:25343743

  13. Graphene oxide/metal nanocrystal multilaminates as the atomic limit for safe and selective hydrogen storage

    Science.gov (United States)

    Cho, Eun Seon; Ruminski, Anne M.; Aloni, Shaul; Liu, Yi-Sheng; Guo, Jinghua; Urban, Jeffrey J.

    2016-02-01

    Interest in hydrogen fuel is growing for automotive applications; however, safe, dense, solid-state hydrogen storage remains a formidable scientific challenge. Metal hydrides offer ample storage capacity and do not require cryogens or exceedingly high pressures for operation. However, hydrides have largely been abandoned because of oxidative instability and sluggish kinetics. We report a new, environmentally stable hydrogen storage material constructed of Mg nanocrystals encapsulated by atomically thin and gas-selective reduced graphene oxide (rGO) sheets. This material, protected from oxygen and moisture by the rGO layers, exhibits exceptionally dense hydrogen storage (6.5 wt% and 0.105 kg H2 per litre in the total composite). As rGO is atomically thin, this approach minimizes inactive mass in the composite, while also providing a kinetic enhancement to hydrogen sorption performance. These multilaminates of rGO-Mg are able to deliver exceptionally dense hydrogen storage and provide a material platform for harnessing the attributes of sensitive nanomaterials in demanding environments.

  14. Hierarchical Layered WS2 /Graphene-Modified CdS Nanorods for Efficient Photocatalytic Hydrogen Evolution.

    Science.gov (United States)

    Xiang, Quanjun; Cheng, Feiyue; Lang, Di

    2016-05-10

    Graphene-based ternary composite photocatalysts with genuine heterostructure constituents have attracted extensive attention in photocatalytic hydrogen evolution. Here we report a new graphene-based ternary composite consisting of CdS nanorods grown on hierarchical layered WS2 /graphene hybrid (WG) as a high-performance photocatalyst for hydrogen evolution under visible light irradiation. The optimal content of layered WG as a co-catalyst in the ternary CdS/WS2 /graphene composites was found to be 4.2 wt %, giving a visible light photocatalytic H2 -production rate of 1842 μmol h(-1)  g(-1) with an apparent quantum efficiency of 21.2 % at 420 nm. This high photocatalytic H2 -production activity is due to the deposition of CdS nanorods on layered WS2 /graphene sheets, which can efficiently suppress charge recombination, improve interfacial charge transfer, and provide reduction active sites. The proposed mechanism for the enhanced photocatalytic activity of CdS nanorods modified with hierarchical layered WG was further confirmed by transient photocurrent response. This work shows that a noble-metal-free hierarchical layered WS2 /graphene nanosheets hybrid can be used as an effective co-catalyst for photocatalytic water splitting. PMID:27059296

  15. PEDOT:PSS/Graphene Nanocomposite Hole-Injection Layer in Polymer Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Chun-Hsuan Lin

    2012-01-01

    Full Text Available We report on effects of doping graphene in poly(3,4-ethylenedioxythiophene: poly(styrene sulfonate, PEDOT:PSS, as a PEDOT:PSS/graphene nanocomposite hole injection layer on the performance enhancement of polymer light-emitting diodes (PLEDs. Graphene oxides were first synthesized and then mixed in the PEDOT:PSS solution with specifically various amounts. Graphenes were reduced in the PEDOT:PSS matrix through thermal reduction. PLED devices with hole-injection nanocomposite layer containing particular doping concentration were fabricated, and the influence of doping concentration on device performance was examined by systematically characterizations of various device properties. Through the graphene doping, the resistance in the hole-injection layer and the turn-on voltage could be effectively reduced that benefited the injection and transport of holes and resulted in a higher overall efficiency. The conductivity of the hole-injection layer was monotonically increased with the increase of doping concentration, performance indices from various aspects, however, did not show the same dependence because faster injected holes might alter not only the balance of holes and electrons but also their combination locations in the light-emitting layer. Results show that optimal doping concentration was the case with 0.03 wt% of graphene oxide.

  16. Phonon scattering and thermal conductance properties in two coupled graphene nanoribbons modulated with bridge atoms

    International Nuclear Information System (INIS)

    The phonon scattering and thermal conductance properties have been studied in two coupled graphene nanoribbons connected by different bridge atoms by using density functional theory in combination with non-equilibrium Green's function approach. The results show that a wide range of thermal conductance tuning can be realized by changing the chemical bond strength and atom mass of the bridge atoms. It is found that the chemical bond strength (bridge atom mass) plays the main role in phonon scattering at low (high) temperature. A simple equation is presented to describe the relationship among the thermal conductance, bridge atom, and temperature.

  17. Atomic Resolution Transmission Electron Microscopy of Defects in Hexagonal Boron Nitride and Graphene

    Science.gov (United States)

    Gibb, Ashley; Alem, Nasim; Song, Chengyu; Ciston, Jim; Zettl, Alex

    2014-03-01

    Monolayer sheets of sp2-bonded materials such as graphene and hexagonal boron nitride (h-BN) have been studied extensively due to their properties including high mechanical strength, thermal conductivity, stability, interesting electronic properties, and potential for integration into novel devices. Understanding the atomic scale structure of defects in these materials is important because defects can significantly affect the physical properties in these materials. In particular, understanding the dynamics of these defects explains much about the material's stability. We have synthesized h-BN and graphene using low pressure chemical vapor deposition and imaged defects using atomic resolution aberration corrected transmission electron microscopy.

  18. Numerical Investigation Of The Bombardment Of A Graphene Sheet By A Beam Of Carbon Atoms

    Directory of Open Access Journals (Sweden)

    O.V. Khomenko

    2009-01-01

    Full Text Available Classical molecular dynamics simulations of the bombardment of a graphene sheet by a beam of carbon atoms are carried out. Covalent bonds in the irradiated sample are described by the Brenner potential. The approximation of elastic balls interacting with graphene via the Lennard-Jones potential is used for particles in a beam. The influence of the energy and density of irradiating carbon atoms and of the presence of a thermostat on physical processes occurring during the collisions with the sample is investigated. Energy values of the particles in a beam, which are enough for the sample destruction, are defined.

  19. Enhanced stability of hydrogen atoms at the graphene/graphane interface of nanoribbons

    OpenAIRE

    Ao, Z. M.; Hernández-Nieves, A. D.; Peeters, F.M.; S. Li

    2010-01-01

    The thermal stability of graphene/graphane nanoribbons (GGNRs) is investigated using density functional theory. It is found that the energy barriers for the diffusion of hydrogen atoms on the zigzag and armchair interfaces of GGNRs are 2.86 and 3.17 eV, respectively, while the diffusion barrier of an isolated H atom on pristine graphene was only ~0.3 eV. These results unambiguously demonstrate that the thermal stability of GGNRs can be enhanced significantly by increasing the hydrogen diffusi...

  20. Morphology Control of Zinc Oxide Nanostructure on Single Layer Graphene.

    Science.gov (United States)

    Ahn, Seungbae; Vijayarangamuthu, K; Jeon, Ki-Jeon

    2016-05-01

    Various morphologies of zinc oxide (ZnO) nanostructures on single layer graphene were synthesized by electrodeposition method. The current density was utilized to control the morphology of the ZnO. The Scanning Electron Microscope (SEM) was used to examine the surface morphology of the samples. SEM analysis shows morphology changes to nanorod, flower, and flakes with increase in the current density from 0.1, 0.2, and 0.3 mA/cm(-1) respectively. The XRD, XPS, and Raman spectroscopy were adopted to characterize the ZnO nanostructure and to understand the formation of various morphologies. The Raman result clearly shows extra modes due to for flakes structure caused by c-axis orientation along the substrate direction. Further, XPS data also supports formation of ZnO without any other intermediate compound such as Zn(OH)2. The formation of various morphologies was correlated to the formation different ratio of Zn2+ and OH- ions and the change in growth direction due to various current densities. PMID:27483766

  1. Observation of Localized Vibrational Modes of Graphene Nanodomes by Inelastic Atom Scattering.

    Science.gov (United States)

    Maccariello, D; Al Taleb, A; Calleja, F; Vázquez de Parga, A L; Perna, P; Camarero, J; Gnecco, E; Farías, D; Miranda, R

    2016-01-13

    Inelastic helium atom scattering (HAS) is suitable to determine low-energy (few meV) vibrations spatially localized on structures in the nanometer range. This is illustrated for the nanodomes that appear often on graphene (Gr) epitaxially grown on single crystal metal surfaces. The nature of the inelastic losses observed in Gr/Ru(0001) and Gr/Cu/Ru(0001) has been clarified by intercalation of Cu below the Gr monolayer, which decouples the Gr layer from the Ru substrate and changes substantially the out-of-plane, flexural phonon dispersion of epitaxial Gr, while maintaining the nanodomes and their localized vibrations. He diffraction proves that the Cu-intercalated Gr layer is well ordered structurally, while scanning tunneling microscopy reveals the persistence of the (slightly modified) periodic array of Gr nanodomes. A simple model explains the order of magnitude of the energy losses associated with the Gr nanodomes and their size dependence. The dispersionless, low-energy phonon branches may radically alter the transport of heat in intercalated Gr. PMID:26630565

  2. Atomic-layer engineering of oxide superconductors

    Science.gov (United States)

    Bollinger, A. T.; Eckstein, J. N.; Dubuis, G.; Pavuna, D.; Božović, I.

    2012-02-01

    Molecular beam epitaxy technique has enabled synthesis of atomically smooth thin films, multilayers, and superlattices of cuprates and other complex oxides. Such heterostructures show high temperature superconductivity and enable novel experiments that probe the basic physics of this phenomenon. For example, it was established that high temperature superconductivity and anti-ferromagnetic phases separate on Ångström scale, while the pseudo-gap state apparently mixes with high temperature superconductivity over an anomalously large length scale (the "Giant Proximity Effect"). We review some recent experiments on such films and superlattices, including X-ray diffraction, atomic force microscopy, angle-resolved time of flight ion scattering and recoil spectroscopy, transport measurements, highresolution transmission electron microscopy, resonant X-ray scattering, low-energy muon spin resonance, and ultrafast photo-induced reflection high energy electron diffraction. The results include an unambiguous demonstration of strong coupling of in-plane charge excitations to out-of-plane lattice vibrations, a discovery of interface high temperature superconductivity that occurs in a single CuO2 plane, evidence for local pairs, and establishing tight limits on the temperature range of superconducting fluctuations.

  3. Atomic-Layer Engineering of Oxide Superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bozovic I.; Bollinger, A.T.; Eckstein, J.N.; Dubuis, G.; Pavuna, D.

    2012-03-01

    Molecular beam epitaxy technique has enabled synthesis of atomically smooth thin films, multilayers, and superlattices of cuprates and other complex oxides. Such heterostructures show high temperature superconductivity and enable novel experiments that probe the basic physics of this phenomenon. For example, it was established that high temperature superconductivity and anti-ferromagnetic phases separate on Angstrom scale, while the pseudo-gap state apparently mixes with high temperature superconductivity over an anomalously large length scale (the 'Giant Proximity Effect'). We review some recent experiments on such films and superlattices, including X-ray diffraction, atomic force microscopy, angle-resolved time of flight ion scattering and recoil spectroscopy, transport measurements, high resolution transmission electron microscopy, resonant X-ray scattering, low-energy muon spin resonance, and ultrafast photo-induced reflection high energy electron diffraction. The results include an unambiguous demonstration of strong coupling of in-plane charge excitations to out-of-plane lattice vibrations, a discovery of interface high temperature superconductivity that occurs in a single CuO{sub 2} plane, evidence for local pairs, and establishing tight limits on the temperature range of superconducting fluctuations.

  4. Mesoporous Few-Layer Graphene Platform for Affinity Biosensing Application.

    Science.gov (United States)

    Ali, Md Azahar; Singh, Chandan; Mondal, Kunal; Srivastava, Saurabh; Sharma, Ashutosh; Malhotra, Bansi D

    2016-03-30

    A label-free, highly reproducible, sensitive, and selective biosensor is proposed using antiapolipoprotein B 100 (AAB) functionalized mesoporous few-layer reduced graphene oxide and nickel oxide (rGO-NiO) nanocomposite for detection of low density lipoprotein (LDL) molecules. The formation of mesoporous rGO-NiO composite on indium tin oxide conductive electrode has been accomplished via electrophoretic technique using colloidal suspension of rGO sheets and NiO nanoparticles. This biosensor shows good stability obtained by surface conjugation of antibody AAB molecules with rGO-NiO matrix by EDC-NHS coupling chemistry. The defect-less few layer rGO sheets, NiO nanoparticles (nNiO) and formation of nanocomposite has been confirmed by Raman mapping, electron microscopic studies, X-ray diffraction, and electrochemical techniques. The synthesized rGO-NiO composite is mesoporous dominated with a small percentage of micro and macroporous structure as is evident by the results of Brunauer-Emmett-Teller experiment. Further, the bioconjugation of AAB with rGO-NiO has been investigated by Fourier transform-infrared spectroscopy studies. The kinetic studies for binding of antigen-antibody (LDL-AAB) and analytical performance of this biosensor have been evaluated by the impedance spectroscopic method. This biosensor exhibits an excellent sensitivity of 510 Ω (mg/dL)(-1) cm(-2) for detection of LDL molecules and is sensitive to 5 mg/dL concentration of LDL in a wide range of 0-130 mg/dL. Thus, this fabricated biosensor is an efficient and highly sensitive platform for the analysis of other antigen-antibody interactions and biomolecules detection. PMID:26950488

  5. Realization of a tunable artificial atom at a supercritically charged vacancy in graphene

    Science.gov (United States)

    Mao, Jinhai; Jiang, Yuhang; Moldovan, Dean; Li, Guohong; Watanabe, Kenji; Taniguchi, Takashi; Masir, Massoud Ramezani; Peeters, Francois M.; Andrei, Eva Y.

    2016-06-01

    Graphene's remarkable electronic properties have fuelled the vision of a graphene-based platform for lighter, faster and smarter electronics and computing applications. One of the challenges is to devise ways to tailor graphene's electronic properties and to control its charge carriers. Here we show that a single-atom vacancy in graphene can stably host a local charge and that this charge can be gradually built up by applying voltage pulses with the tip of a scanning tunnelling microscope. The response of the conduction electrons in graphene to the local charge is monitored with scanning tunnelling and Landau level spectroscopy, and compared to numerical simulations. As the charge is increased, its interaction with the conduction electrons undergoes a transition into a supercritical regime where itinerant electrons are trapped in a sequence of quasi-bound states which resemble an artificial atom. The quasi-bound electron states are detected by a strong enhancement of the density of states within a disc centred on the vacancy site which is surrounded by halo of hole states. We further show that the quasi-bound states at the vacancy site are gate tunable and that the trapping mechanism can be turned on and off, providing a mechanism to control and guide electrons in graphene.

  6. Highly atom-economic synthesis of graphene/Mn₃O₄ hybrid composites for electrochemical supercapacitors.

    Science.gov (United States)

    Jiangying, Qu; Feng, Gao; Quan, Zhou; Zhiyu, Wang; Han, Hu; Beibei, Li; Wubo, Wan; Xuzhen, Wang; Jieshan, Qiu

    2013-04-01

    A highly atom-economic procedure for the preparation of reduced graphene oxide/Mn3O4 (rGO/Mn3O4) composites is reported. Pristine graphene oxide/manganese sulfate (GO/MnSO4) suspension produced by modified Hummers method is utilized with high efficiency, which has been in situ converted into GO/Mn3O4 hybrid composite by air oxidation, then into rGO/Mn3O4 composite by means of dielectric barrier discharge (DBD) plasma-assisted deoxygenation. The Mn3O4 content of the rGO/Mn3O4 composites can be readily tailored. It is observed that Mn3O4 nanoparticles of 15-24 nm are well-dispersed on graphene sheets with Mn3O4 loading as high as 90%. The specific capacitance of the as-prepared rGO/Mn3O4 hybrids with 90% Mn3O4 reaches 193 F g(-1) when employed as the electrode material in neutral Na2SO4 electrolyte solutions (76 F g(-1) for pristine graphene and 95 F g(-1) for pure Mn3O4), which indicates the positive synergetic effects from both graphene and attached Mn3O4. The method developed in this study should offer a new technique for the large scale and highly atom-economic production of graphene/MnOx composites for many applications. PMID:23459860

  7. Failure of multi-layer graphene coatings in acidic media

    DEFF Research Database (Denmark)

    Yu, Feng; Stoot, Adam Carsten; Bøggild, Peter;

    2016-01-01

    Being impermeable to all gases, graphene has been proposed as an effective ultrathin barrier film and protective coating. However, here it is shown how the gastight property of graphene-based coatings may indirectly lead to their catastrophic failure under certain conditions. When nickel coated...... with thick, high-quality chemical vapor deposited multilayered graphene is exposed to acidic solutions, a dramatic evolution of gas is observed at the coating–substrate interface. The gas bubbles grow and merge, eventually rupturing and delaminating the coating. This behavior, attributed to cathodic...... hydrogen evolution, can also occur spontaneously on a range of other technologically important metals and alloys based on iron, zinc, aluminum and manganese; this makes these findings relevant for practical applications of graphene-based coatings.Being impermeable to all gases, graphene has been proposed...

  8. Controllable functionalization and wettability transition of graphene-based films by an atomic oxygen strategy

    International Nuclear Information System (INIS)

    Though chemical modification of graphene based on Hummers method has been most widely used to tailor its properties and interfacial characteristics, a method which could achieve definitive and controllable groups and properties is still highly required. Here, we demonstrate a high-vacuum oxidation strategy by atomic oxygen (AO) and investigate the AO induced functionalization and wettability transition in films made from basal-defect- and oxide-free graphene dispersions. These graphene-based films are neither graphene nor graphite, but graphene blocks constituted by numerous randomly stacked graphene flakes. It is found that AO induced functionalization of these films through the formation of epoxy groups, sp3 configuration, ether, and double and triple C–O groups. The films turn to be hydrophilic after exposed to AO. The contact angle increases with AO exposure time. This phenomenon is attributed to the lower surface roughness induced by collision and/or edge erosion of energetic ions to the film surface and is further explained by the Wenzel model. The demonstrated strategy can overcome limitations of Hummers method, provide possibility to gain functionalization and wettability transition in liquid-phase exfoliated basal-defect- and oxide-free graphene in the dry environment, and may extend the study and application of this material in spacecraft in low earth orbit

  9. Epitaxial B-Graphene: Large-Scale Growth and Atomic Structure.

    Science.gov (United States)

    Usachov, Dmitry Yu; Fedorov, Alexander V; Petukhov, Anatoly E; Vilkov, Oleg Yu; Rybkin, Artem G; Otrokov, Mikhail M; Arnau, Andrés; Chulkov, Evgueni V; Yashina, Lada V; Farjam, Mani; Adamchuk, Vera K; Senkovskiy, Boris V; Laubschat, Clemens; Vyalikh, Denis V

    2015-07-28

    Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an efficient method based on chemical vapor deposition for large scale growth of boron-doped graphene (B-graphene) on Ni(111) and Co(0001) substrates using carborane molecules as the precursor. It is shown that up to 19 at. % of boron can be embedded in the graphene matrix and that a planar C-B sp(2) network is formed. It is resistant to air exposure and widely retains the electronic structure of graphene on metals. The large-scale and local structure of this material has been explored depending on boron content and substrate. By resolving individual impurities with scanning tunneling microscopy we have demonstrated the possibility for preferential substitution of carbon with boron in one of the graphene sublattices (unbalanced sublattice doping) at low doping level on the Ni(111) substrate. At high boron content the honeycomb lattice of B-graphene is strongly distorted, and therefore, it demonstrates no unballanced sublattice doping. PMID:26121999

  10. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    Science.gov (United States)

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells. PMID:22889019

  11. Dissipative optomechanics of a single-layer graphene in a microcavity

    CERN Document Server

    Xiao, Lin-Da; Liu, Yong-Chun; Yan, Meng-Yuan; Xiao, Yun-Feng

    2014-01-01

    We study the optomechanical coupling of a single-layer graphene with a high-Q Fabry-P?erot microcavity in the membrane-in-the-middle configuration. In ordinary dissipative coupling systems, mechanical oscillators modulate the loss associated with the input coupling of the cavity mode; while in our system, the graphene oscillator couples dissipatively with the cavity mode through modulating its absorption loss. By analyzing the effects of the interband transition of a graphene suspended near the node of the cavity field, we obtain strong and tunable dissipative coupling without excessively reducing the optical quality factor. Finally, it is found that the exural mode of the graphene could be cooled down to its ground state in the present coupling system. This study provides new insights for graphene optomechanics in the visible range.

  12. Highly brilliant synchrotron radiation operando spectromicroscopy to bridge a gap between material electronic properties and device performances of 2D atomic layers

    International Nuclear Information System (INIS)

    Si-based electronics has reached an ultimate fabrication level (22 nm design rule), which makes further progress hardly achieved. Therefore, 2D atomic layers including graphene have been extensively studied as next-generation device materials to supplement device functions which Si-based electronics cannot serve. Unfortunately, however, there is a gap between material electronic properties and device performances in the researches on 2D atomic layers. We demonstrate soft x-ray operando spectromicroscopies, photoemission electron microscopy (PEEM) and 3D scanning photoelectron microscopy (3D nano-ESCA), in SPring-8 to bridge the gap in graphene research. The complementary use of these operando spectromicroscopies enables us to probe both valence band and conduction bands of graphene channels under operation, resulting in revealing the effects of the interfaces with contact metal and oxide. The significance of the operando spectromicroscopy is now recognized, resulting in the adoption as a major research target in NEDO academic-industrial alliance project. (author)

  13. A Study on Field Emission Characteristics of Planar Graphene Layers Obtained from a Highly Oriented Pyrolyzed Graphite Block.

    KAUST Repository

    Lee, Seok Woo

    2009-07-12

    This paper describes an experimental study on field emission characteristics of individual graphene layers for vacuum nanoelectronics. Graphene layers were prepared by mechanical exfoliation from a highly oriented pyrolyzed graphite block and placed on an insulating substrate, with the resulting field emission behavior investigated using a nanomanipulator operating inside a scanning electron microscope. A pair of tungsten tips controlled by the nanomanipulator enabled electric connection with the graphene layers without postfabrication. The maximum emitted current from the graphene layers was 170 nA and the turn-on voltage was 12.1 V.

  14. Coherent nonlinear electromagnetic response in twisted bilayer and few-layer graphene

    Indian Academy of Sciences (India)

    Vipin Kumar; Enamullah; Upendra Kumar; Girish S Setlur

    2014-10-01

    The phenomenon of Rabi oscillations far from resonance is described in bilayer and few-layer graphene. These oscillations in the population and polarization at the Dirac point in -layer graphene are seen in the nth harmonic termin the external driving frequency. The underlying reason behind these oscillations is attributable to the pseudospin degree of freedom possessed by all these systems. Conventional Rabi oscillations, which occur only near resonance, are seen in multiple harmonics in multilayer graphene. However, the experimentally measurable current density exhibits anomalous behaviour only in the first harmonic in all the graphene systems. A fully numerical solution of the optical Bloch equations is in complete agreement with the analytical results, thereby justifying the approximation schemes used in the latter. The same phenomena are also described in twisted bilayer graphene with and without an electric potential difference between the layers. It is found that the anomalous Rabi frequency is strongly dependent on twist angle for weak applied fields – a feature absent in single-layer graphene, whereas the conventional Rabi frequency is relatively independent of the twist angle.

  15. Few layers isolated graphene domains grown on copper foils by microwave surface wave plasma CVD using camphor as a precursor

    Science.gov (United States)

    Ram Aryal, Hare; Adhikari, Sudip; Uchida, Hideo; Wakita, Koichi; Umeno, Masayoshi

    2016-03-01

    Few layers isolated graphene domains were grown by microwave surface wave plasma CVD technique using camphor at low temperature. Graphene nucleation centers were suppressed on pre-annealed copper foils by supplying low dissociation energy. Scanning electron microscopy study of time dependent growth reveals that graphene nucleation centers were preciously suppressed, which indicates the possibility of controlled growth of large area single crystal graphene domains by plasma processing. Raman spectroscopy revealed that the graphene domains are few layered which consist of relatively low defects.

  16. Large area graphene ion sensitive field effect transistors with tantalum pentoxide sensing layers for pH measurement at the Nernstian limit

    International Nuclear Information System (INIS)

    We have fabricated and characterized large area graphene ion sensitive field effect transistors (ISFETs) with tantalum pentoxide sensing layers and demonstrated pH sensitivities approaching the Nernstian limit. Low temperature atomic layer deposition was used to deposit tantalum pentoxide atop large area graphene ISFETs. The charge neutrality point of graphene, inferred from quantum capacitance or channel conductance, was used to monitor surface potential in the presence of an electrolyte with varying pH. Bare graphene ISFETs exhibit negligible response, while graphene ISFETs with tantalum pentoxide sensing layers show increased sensitivity reaching up to 55 mV/pH over pH 3 through pH 8. Applying the Bergveld model, which accounts for site binding and a Guoy-Chapman-Stern picture of the surface-electrolyte interface, the increased pH sensitivity can be attributed to an increased buffer capacity reaching up to 1014 sites/cm2. ISFET response was found to be stable to better than 0.05 pH units over the course of two weeks.

  17. Atomically-Smooth MgO films grown on Epitaxial Graphene by Pulsed Laser Deposition

    Science.gov (United States)

    Stuart, Sean; Sandin, Andreas; Rowe, Jack; Dougherty, Dan; Ulrich, Marc

    2013-03-01

    The growth of high quality insulating films on graphene is a crucial materials science task for graphene electronic and spintronic applications. It has been demonstrated that direct spin injection from a magnetic electrode to graphene is possible using MgO tunnel barriers of sufficient quality. We have used pulsed laser deposition (PLD) to grow thin magnesium oxide films directly on epitaxial graphene on SiC(0001). We observe very smooth film morphologies (typical rms roughness of ~ 0.4 nm) that are nearly independent of film thickness and conform to the substrate surface which had ~ 0.2 nm rms roughness. Surface roughness of 0.04 nm have been recorded for ~ 1nm films with no pinholes seen by AFM. XPS and XRD data show non crystalline, hydroxylated MgO films with uniform coverage. This work shows that PLD is a good technique to produce graphene-oxide interfaces without pre-deposition of an adhesion layer or graphene functionalization. The details and kinetics of the deposition process will be described with comparisons being made to other dielectric-on-graphene deposition approaches. Funded by ARO Staff Research Contract # W911NF.

  18. High-yield synthesis of few-layer graphene flakes through electrochemical expansion of graphite in propylene carbonate electrolyte.

    Science.gov (United States)

    Wang, Junzhong; Manga, Kiran Kumar; Bao, Qiaoliang; Loh, Kian Ping

    2011-06-15

    High-yield production of few-layer graphene flakes from graphite is important for the scalable synthesis and industrial application of graphene. However, high-yield exfoliation of graphite to form graphene sheets without using any oxidation process or super-strong acid is challenging. Here we demonstrate a solution route inspired by the lithium rechargeable battery for the high-yield (>70%) exfoliation of graphite into highly conductive few-layer graphene flakes (average thickness salts and organic solvents under high current density and exfoliated efficiently into few-layer graphene sheets with the aid of sonication. The dispersible graphene can be ink-brushed to form highly conformal coatings of conductive films (15 ohm/square at a graphene loading of <1 mg/cm(2)) on commercial paper. PMID:21557613

  19. Large networks of vertical multi-layer graphenes with morphology-tunable magnetoresistance.

    Science.gov (United States)

    Yue, Zengji; Levchenko, Igor; Kumar, Shailesh; Seo, Donghan; Wang, Xiaolin; Dou, Shixue; Ostrikov, Kostya Ken

    2013-10-01

    We report on the comparative study of magnetotransport properties of large-area vertical few-layer graphene networks with different morphologies, measured in a strong (up to 10 T) magnetic field over a wide temperature range. The petal-like and tree-like graphene networks grown by a plasma enhanced CVD process on a thin (500 nm) silicon oxide layer supported by a silicon wafer demonstrate a significant difference in the resistance-magnetic field dependencies at temperatures ranging from 2 to 200 K. This behaviour is explained in terms of the effect of electron scattering at ultra-long reactive edges and ultra-dense boundaries of the graphene nanowalls. Our results pave a way towards three-dimensional vertical graphene-based magnetoelectronic nanodevices with morphology-tuneable anisotropic magnetic properties. PMID:23603856

  20. Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor

    International Nuclear Information System (INIS)

    Highlights: • We report the synthesis of graphene oxide nanosheets and electrical characterization of graphene oxide based thin film transistor. • Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. • We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor. - Abstract: We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and Ion/Ioff of GO-TFT were found to be 0.105 cm2 V−1 s−1, −8.7 V, 4.03 V/decade and 10, respectively

  1. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    OpenAIRE

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit

    2014-01-01

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superla...

  2. Hydrothermal synthesis of highly nitrogen-doped few-layer graphene via solid–gas reaction

    International Nuclear Information System (INIS)

    Highlights: • A novel approach to synthesis of N-doped few-layer graphene has been developed. • The high doping levels of N in products are achieved. • XPS and XANES results reveal a thermal transformation of N bonding configurations. • The developed method is cost-effective and eco-friendly. - Abstract: Nitrogen-doped (N-doped) graphene sheets with high doping concentration were facilely synthesized through solid–gas reaction of graphene oxide (GO) with ammonia vapor in a self-designed hydrothermal system. The morphology, surface chemistry and electronic structure of N-doped graphene sheets were investigated by TEM, AFM, XRD, XPS, XANES and Raman characterizations. Upon hydrothermal treatment, up to 13.22 at% of nitrogen could be introduced into the crumpled few-layer graphene sheets. Both XPS and XANES analysis reveal that the reaction between oxygen functional groups in GO and ammonia vapor produces amide and amine species in hydrothermally treated GO (HTGO). Subsequent thermal annealing of the resultant HTGO introduces a gradual transformation of nitrogen bonding configurations in graphene sheets from amine N to pyridinic and graphitic N with the increase of annealing temperature. This study provides a simple but cost-effective and eco-friendly method to prepare N-doped graphene materials in large-scale for potential applications

  3. Basics of quantum field theory of electromagnetic interaction processes in single-layer graphene

    Science.gov (United States)

    Hieu Nguyen, Van

    2016-09-01

    The content of this work is the study of electromagnetic interaction in single-layer graphene by means of the perturbation theory. The interaction of electromagnetic field with Dirac fermions in single-layer graphene has a peculiarity: Dirac fermions in graphene interact not only with the electromagnetic wave propagating within the graphene sheet, but also with electromagnetic field propagating from a location outside the graphene sheet and illuminating this sheet. The interaction Hamiltonian of the system comprising electromagnetic field and Dirac fermions fields contains the limits at graphene plane of electromagnetic field vector and scalar potentials which can be shortly called boundary electromagnetic field. The study of S-matrix requires knowing the limits at graphene plane of 2-point Green functions of electromagnetic field which also can be shortly called boundary 2-point Green functions of electromagnetic field. As the first example of the application of perturbation theory, the second order terms in the perturbative expansions of boundary 2-point Green functions of electromagnetic field as well as of 2-point Green functions of Dirac fermion fields are explicitly derived. Further extension of the application of perturbation theory is also discussed.

  4. Suppressing Manganese Dissolution from Lithium Manganese Oxide Spinel Cathodes with Single-Layer Graphene

    Energy Technology Data Exchange (ETDEWEB)

    Jaber-Ansari, Laila; Puntambekar, Kanan P.; Kim, Soo; Aykol, Muratahan; Luo, Langli; Wu, Jinsong; Myers, Benjamin D.; Iddir, Hakim; Russell, John T.; Saldana, Spencer J.; Kumar, Rajan; Thackeray, Michael M.; Curtiss, Larry A.; Dravid, Vinayak P.; Wolverton, Christopher M.; Hersam, Mark C.

    2015-06-24

    Spinel-structured LiMn 2 O 4 (LMO) is a desirable cathode material for Li-ion batteries due to its low cost, abundance, and high power capability. However, LMO suffers from limited cycle life that is triggered by manganese dissolution into the electrolyte during electrochemical cycling. Here, it is shown that single-layer graphene coatings suppress manganese dissolution, thus enhancing the performance and lifetime of LMO cathodes. Relative to lithium cells with uncoated LMO cathodes, cells with graphene-coated LMO cathodes provide improved capacity retention with enhanced cycling stability. X-ray photoelectron spectroscopy reveals that graphene coatings inhibit manganese depletion from the LMO surface. Additionally, transmission electron microscopy demonstrates that a stable solid electrolyte interphase is formed on graphene, which screens the LMO from direct contact with the electrolyte. Density functional theory calculations provide two mechanisms for the role of graphene in the suppression of manganese dissolution. First, common defects in single-layer graphene are found to allow the transport of lithium while concurrently acting as barriers for manganese diffusion. Second, graphene can chemically interact with Mn 3+ at the LMO electrode surface, promoting an oxidation state change to Mn 4+ , which suppresses dissolution.

  5. In situ formation of graphene layers on graphite surfaces for efficient anodes of microbial fuel cells.

    Science.gov (United States)

    Tang, Jiahuan; Chen, Shanshan; Yuan, Yong; Cai, Xixi; Zhou, Shungui

    2015-09-15

    Graphene can be used to improve the performance of the anode in a microbial fuel cell (MFC) due to its good biocompatibility, high electrical conductivity and large surface area. However, the chemical production and modification of the graphene on the anode are environmentally hazardous because of the use of various harmful chemicals. This study reports a novel method based on the electrochemical exfoliation of a graphite plate (GP) for the in situ formation of graphene layers on the surface of a graphite electrode. When the resultant graphene-layer-based graphite plate electrode (GL/GP) was used as an anode in an MFC, a maximum power density of 0.67 ± 0.034 W/m(2) was achieved. This value corresponds to 1.72-, 1.56- and 1.26-times the maximum power densities of the original GP, exfoliated-graphene-modified GP (EG/GP) and chemically-reduced-graphene-modified GP (rGO/GP) anodes, respectively. Electrochemical measurements revealed that the high performance of the GL/GP anode was attributable to its macroporous structure, improved electron transfer and high electrochemical capacitance. The results demonstrated that the proposed method is a facile and environmentally friendly synthesis technique for the fabrication of high-performance graphene-based electrodes for use in microbial energy harvesting. PMID:25950933

  6. Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

    Energy Technology Data Exchange (ETDEWEB)

    Tselev, Alexander, E-mail: tseleva@ornl.gov; Kalinin, Sergei V. [Oak Ridge National Laboratory, Center for Nanophase Materials Sciences, Oak Ridge, Tennessee 37831 (United States); Sangwan, Vinod K.; Jariwala, Deep; Lauhon, Lincoln J. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Marks, Tobin J.; Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

    2013-12-09

    Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al{sub 2}O{sub 3} and HfO{sub 2} films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al{sub 2}O{sub 3}/HfO{sub 2} stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

  7. Thermal van der Waals Interaction between Graphene Layers

    OpenAIRE

    Gómez-Santos, G.

    2009-01-01

    The van de Waals interaction between two graphene sheets is studied at finite temperatures. Graphene's thermal length $(\\xi_T = \\hbar v / k_B T)$ controls the force versus distance $(z)$ as a crossover from the zero temperature results for $z\\ll \\xi_T$, to a linear-in-temperature, universal regime for $z\\gg \\xi_T$. The large separation regime is shown to be a consequence of the classical behavior of graphene's plasmons at finite temperature. Retardation effects are largely irrelevant, both in...

  8. Electronic structures of single- and multi-layer epitaxial graphene on SiC (0001)

    Science.gov (United States)

    Kim, Seungchul; Ihm, Jisoon; Son, Young-Woo

    2009-03-01

    The electronic structures of single- and multi-layered epitaxial graphene on silicon carbide (0001) surface are studied theoretically. To calculate energy bands of the systems, we construct the simple Hamiltonian with tight-binding approximations. We confirm that the present simple model do give identical electronic structure to the previous ab-initio study on the single layer case [1]. We extend the model up to four epitaxial graphene layers to explain various interesting experimental findings. The roles of the coupling between graphenes and the buffer layer, and their large scale reconstructions to the electronic structures are also investigated. [1] S. Kim, J. Ihm, H. J. Choi, Y.-W. Son, Phys. Rev. Lett. 100, 176802 (2008).

  9. NO2 and Humidity Sensing Characteristics of Few-layer Graphene

    CERN Document Server

    Ghosh, Anupama; Panchakarla, L S; Govindaraj, A; Rao, C N R

    2009-01-01

    Sensing characteristics of few-layer graphenes for NO2 and humidity have been investigated with graphene samples prepared by the thermal exfoliation of graphitic oxide (EG), conversion of nanodiamond (DG) and arc-discharge of graphite in hydrogen (HG). The sensitivity for NO2 is found to be highest with DG. Nitrogen-doped HG (n-type) shows increased sensitivity for NO2 compared to pure HG. The highest sensitivity for humidity is observed with HG. The sensing characteristics of graphene have been examined for different aliphatic alcohols and the sensitivity is found to vary with the chain length and branching.

  10. Extremely high response of electrostatically exfoliated few layer graphene to ammonia adsorption

    International Nuclear Information System (INIS)

    Extremely high gas sensing properties of p-type few layer graphene flakes exfoliated from highly oriented pyrolytic graphite have been demonstrated. The current response to ammonia adsorption is strongly dependent on film thickness and is higher than that for graphene by 1-8 orders of magnitude. A maximal response was found for sample thickness ∼ 2 nm. The effect is attributed to the formation of multiple p-n-p junctions at the grain boundaries in the polycrystalline graphene flakes exposed to ammonia-containing ambient.

  11. Large networks of vertical multi-layer graphenes with morphology-tunable magnetoresistance

    Science.gov (United States)

    Yue, Zengji; Levchenko, Igor; Kumar, Shailesh; Seo, Donghan; Wang, Xiaolin; Dou, Shixue; Ostrikov, Kostya (Ken)

    2013-09-01

    We report on the comparative study of magnetotransport properties of large-area vertical few-layer graphene networks with different morphologies, measured in a strong (up to 10 T) magnetic field over a wide temperature range. The petal-like and tree-like graphene networks grown by a plasma enhanced CVD process on a thin (500 nm) silicon oxide layer supported by a silicon wafer demonstrate a significant difference in the resistance-magnetic field dependencies at temperatures ranging from 2 to 200 K. This behaviour is explained in terms of the effect of electron scattering at ultra-long reactive edges and ultra-dense boundaries of the graphene nanowalls. Our results pave a way towards three-dimensional vertical graphene-based magnetoelectronic nanodevices with morphology-tuneable anisotropic magnetic properties.We report on the comparative study of magnetotransport properties of large-area vertical few-layer graphene networks with different morphologies, measured in a strong (up to 10 T) magnetic field over a wide temperature range. The petal-like and tree-like graphene networks grown by a plasma enhanced CVD process on a thin (500 nm) silicon oxide layer supported by a silicon wafer demonstrate a significant difference in the resistance-magnetic field dependencies at temperatures ranging from 2 to 200 K. This behaviour is explained in terms of the effect of electron scattering at ultra-long reactive edges and ultra-dense boundaries of the graphene nanowalls. Our results pave a way towards three-dimensional vertical graphene-based magnetoelectronic nanodevices with morphology-tuneable anisotropic magnetic properties. Electronic supplementary information (ESI) available: Fig. S1-S6, a schematic of the experimental setup, SEM and TEM characterizations, and details of electrical measurements. See DOI: 10.1039/c3nr00550j

  12. Bio-inspired two-dimensional nanofluidic generators based on a layered graphene hydrogel membrane.

    Science.gov (United States)

    Guo, Wei; Cheng, Chi; Wu, Yanzhe; Jiang, Yanan; Gao, Jun; Li, Dan; Jiang, Lei

    2013-11-13

    An electrogenetic layered graphene hydrogel membrane (GHM) possesses ultra-large interlayer spacing of about 10 nm, forming charged 2D nanocapillaries between graphene sheets that selectively permeate counter-ions and exclude co-ions. When an electrolyte flow goes through the GHM, it functions as an integrated 2D nanofluidic generator converting hydraulic motion into electricity. The maximum streaming conductance density approaches 16.8 μA cm(-2) bar(-1) . PMID:23900945

  13. Tuning the electronic structure and transport properties of graphene by noncovalent functionalization: effects of organic donor, acceptor and metal atoms

    International Nuclear Information System (INIS)

    Using density functional theory and nonequilibrium Green's function (NEGF) formalism, we have theoretically investigated the binding of organic donor, acceptor and metal atoms on graphene sheets, and revealed the effects of the different noncovalent functionalizations on the electronic structure and transport properties of graphene. The adsorptions of 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) and tetrathiafulvalene (TTF) induce hybridization between the molecular levels and the graphene valence bands, and transform the zero-gap semiconducting graphene into a metallic graphene. However, the current versus voltage (I-V) simulation indicates that the noncovalent modifications by organic molecules are not sufficient to significantly alter the transport property of the graphene for sensing applications. We found that the molecule/graphene interaction could be dramatically enhanced by introducing metal atoms to construct molecule/metal/graphene sandwich structures. A chemical sensor based on iron modified graphene shows a sensitivity two orders of magnitude higher than that of pristine graphene. The results of this work could help to design novel graphene-based sensing or switching devices.

  14. Role of metallic substrate on the plasmon modes in double-layer graphene structures

    Science.gov (United States)

    Cruz, G. Gonzalez de la

    2015-07-01

    Novel heterostructures combining different layered materials offer new opportunities for applications and fundamental studies of collective excitations driven by interlayer Coulomb interactions. In this work, we have investigated the influence of the metallic-like substrate on the plasmon spectrum of a double layer graphene system and a structure consisting of conventional two-dimensional electron gas (2DEG) immersed in a semiconductor quantum well and a graphene sheet with an interlayer separation of d. Long-range Coulomb interactions between substrate and graphene layered systems lead a new set of spectrum plasmons. At long wavelengths (q→0) the acoustic modes (ω~q) depend, besides on the carrier density in each layer, on the distance between the first carrier layer and the substrate in both structures. Furthermore, in the relativistic/nonrelativistic layered structure an undamped acoustic mode emerges for a certain interlayer critical distance dc. On the other hand, the optical plasmon modes emerging from the coupling of the double-layer systems and the substrate, both start at finite frequency at q=0 in contrast to the collective excitation spectrum ω~q1/2 reported in the literature for double-layer graphene structures.

  15. An Introduction to Atomic Layer Deposition with Thermal Applications

    Science.gov (United States)

    Dwivedi, Vivek H.

    2015-01-01

    Atomic Layer Deposition (ALD) is a cost effective nano-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. Through the introduction of paired precursor gases thin films can be deposited on a myriad of substrates ranging from glass, polymers, aerogels, and metals to high aspect ratio geometries. This talk will focus on the utilization of ALD for engineering applications.

  16. A graphene meta-interface for enhancing the stretchability of brittle oxide layers

    Science.gov (United States)

    Won, Sejeong; Jang, Jae-Won; Choi, Hyung-Jin; Kim, Chang-Hyun; Lee, Sang Bong; Hwangbo, Yun; Kim, Kwang-Seop; Yoon, Soon-Gil; Lee, Hak-Joo; Kim, Jae-Hyun; Lee, Soon-Bok

    2016-02-01

    Oxide materials have recently attracted much research attention for applications in flexible and stretchable electronics due to their excellent electrical properties and their compatibility with established silicon semiconductor processes. Their widespread uptake has been hindered, however, by the intrinsic brittleness and low stretchability. Here we investigate the use of a graphene meta-interface to enhance the electromechanical stretchability of fragile oxide layers. Electromechanical tensile tests of indium tin oxide (ITO) layers on polymer substrates were carried out with in situ observations using an optical microscope. It was found that the graphene meta-interface reduced the strain transfer between the ITO layer and the substrate, and this behavior was well described using a shear lag model. The graphene meta-interface provides a novel pathway for realizing flexible and stretchable electronic applications based on oxide layers.Oxide materials have recently attracted much research attention for applications in flexible and stretchable electronics due to their excellent electrical properties and their compatibility with established silicon semiconductor processes. Their widespread uptake has been hindered, however, by the intrinsic brittleness and low stretchability. Here we investigate the use of a graphene meta-interface to enhance the electromechanical stretchability of fragile oxide layers. Electromechanical tensile tests of indium tin oxide (ITO) layers on polymer substrates were carried out with in situ observations using an optical microscope. It was found that the graphene meta-interface reduced the strain transfer between the ITO layer and the substrate, and this behavior was well described using a shear lag model. The graphene meta-interface provides a novel pathway for realizing flexible and stretchable electronic applications based on oxide layers. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr05412e

  17. Graphene on SiC (0001) inspected by dynamic atomic force microscopy at room temperature

    Czech Academy of Sciences Publication Activity Database

    Telychko, Mykola; Berger, Jan; Majzik, Zsolt; Jelínek, Pavel; Švec, Martin

    2015-01-01

    Roč. 6, Apr (2015), s. 901-906. ISSN 2190-4286 R&D Projects: GA ČR(CZ) GA14-02079S; GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : graphene * AFM * STM * DFT * atomic resolution Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.670, year: 2014

  18. Stable aqueous dispersions of functionalized multi-layer graphene by pulsed underwater plasma exfoliation of graphite

    Science.gov (United States)

    Meyer-Plath, Asmus; Beckert, Fabian; Tölle, Folke J.; Sturm, Heinz; Mülhaupt, Rolf

    2016-02-01

    A process was developed for graphite particle exfoliation in water to stably dispersed multi-layer graphene. It uses electrohydraulic shockwaves and the functionalizing effect of solution plasma discharges in water. The discharges were excited by 100 ns high voltage pulsing of graphite particle chains that bridge an electrode gap. The underwater discharges allow simultaneous exfoliation and chemical functionalization of graphite particles to partially oxidized multi-layer graphene. Exfoliation is caused by shockwaves that result from rapid evaporation of carbon and water to plasma-excited gas species. Depending on discharge energy and locus of ignition, the shockwaves cause stirring, erosion, exfoliation and/or expansion of graphite flakes. The process was optimized to produce long-term stable aqueous dispersions of multi-layer graphene from graphite in a single process step without requiring addition of intercalants, surfactants, binders or special solvents. A setup was developed that allows continuous production of aqueous dispersions of flake size-selected multi-layer graphenes. Due to the well-preserved sp2-carbon structure, thin films made from the dispersed graphene exhibited high electrical conductivity. Underwater plasma discharge processing exhibits high innovation potential for morphological and chemical modifications of carbonaceous materials and surfaces, especially for the generation of stable dispersions of two-dimensional, layered materials.

  19. Stable aqueous dispersions of functionalized multi-layer graphene by pulsed underwater plasma exfoliation of graphite

    International Nuclear Information System (INIS)

    A process was developed for graphite particle exfoliation in water to stably dispersed multi-layer graphene. It uses electrohydraulic shockwaves and the functionalizing effect of solution plasma discharges in water. The discharges were excited by 100 ns high voltage pulsing of graphite particle chains that bridge an electrode gap. The underwater discharges allow simultaneous exfoliation and chemical functionalization of graphite particles to partially oxidized multi-layer graphene. Exfoliation is caused by shockwaves that result from rapid evaporation of carbon and water to plasma-excited gas species. Depending on discharge energy and locus of ignition, the shockwaves cause stirring, erosion, exfoliation and/or expansion of graphite flakes. The process was optimized to produce long-term stable aqueous dispersions of multi-layer graphene from graphite in a single process step without requiring addition of intercalants, surfactants, binders or special solvents. A setup was developed that allows continuous production of aqueous dispersions of flake size-selected multi-layer graphenes. Due to the well-preserved sp2-carbon structure, thin films made from the dispersed graphene exhibited high electrical conductivity. Underwater plasma discharge processing exhibits high innovation potential for morphological and chemical modifications of carbonaceous materials and surfaces, especially for the generation of stable dispersions of two-dimensional, layered materials. (paper)

  20. Ultrafast non-thermal electron dynamics in single layer graphene

    OpenAIRE

    Novoselov K.S.; Geim A.K.; Nair R.R.; Polini M.; Tomadin A.; Cerullo G.; Manzoni C.; Brida D.; Milana S.; Lombardo A.; Ferrari A.C.

    2012-01-01

    We study the ultrafast dynamics of non-thermal electron relaxation in graphene upon impulsive excitation. The 10-fs resolution two color pump-probe allows us to unveil the non-equilibrium electron gas decay at early times.

  1. Stepwise Reduction of Immobilized Mono layer Graphene Oxides

    DEFF Research Database (Denmark)

    Petersen, Søren; He, Yudong; Lang, Jiang;

    2013-01-01

    -ray photoelectron spectroscopy (XPS) along with electrical characterization. XPS measurements confirmed a full conversion into virtually oxygen-free chemically converted graphene. The electrical characterization revealed large variations in the conductivity for single sheets in the diluted LB films, with an average......Chemically converted graphene is highly relevant for transparent conducting film applications such as display and photovoltaic uses. So far, the major obstacle for realizing the potential has been to fully reduce/deoxygenate the graphene oxide (GO), which is challenging in part due to the...... pronounced aggregation that accompanies deoxygenation of GO in solution. Surface immobilization of monolayered graphene oxide (mGO) in Langmuir-Blodgett (LB) films was investigated as a method to circumvent this problem. Two types of LB films with different density of mGO flakes were prepared, i.e., diluted...

  2. Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Mohamed Lajnef

    2008-01-01

    Full Text Available GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD for different growth temperatures using atomic layer epitaxy (ALE technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM. The effect of growth temperature is studied using photoluminescence measurements (PL.The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to strain effect resulting from the lattice mismatch between GaAs and porous Si substrate.

  3. Femtosecond laser induced periodic surface structures on multi-layer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Beltaos, Angela, E-mail: abeltaos@ualberta.ca; Kovačević, Aleksander G.; Matković, Aleksandar; Ralević, Uroš; Savić-Šević, Svetlana; Jovanović, Djordje; Jelenković, Branislav M.; Gajić, Radoš [Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia)

    2014-11-28

    In this work, we present an observation of laser induced periodic surface structures (LIPSS) on graphene. LIPSS on other materials have been observed for nearly 50 years, but until now, not on graphene. Our findings for LIPSS on multi-layer graphene were consistent with previous reports of LIPSS on other materials, thus classifying them as high spatial frequency LIPSS. LIPSS on multi-layer graphene were generated in an air environment by a linearly polarized femtosecond laser with excitation wavelength λ of 840 nm, pulse duration τ of ∼150 fs, and a fluence F of ∼4.3–4.4 mJ/cm{sup 2}. The observed LIPSS were perpendicular to the laser polarization and had dimensions of width w of ∼30–40 nm and length l of ∼0.5–1.5 μm, and spatial periods Λ of ∼70–100 nm (∼λ/8–λ/12), amongst the smallest of spatial periods reported for LIPSS on other materials. The spatial period and width of the LIPSS were shown to decrease for an increased number of laser shots. The experimental results support the leading theory behind high spatial frequency LIPSS formation, implying the involvement of surface plasmon polaritons. This work demonstrates a new way to pattern multi-layer graphene in a controllable manner, promising for a variety of emerging graphene/LIPSS applications.

  4. Femtosecond laser induced periodic surface structures on multi-layer graphene

    International Nuclear Information System (INIS)

    In this work, we present an observation of laser induced periodic surface structures (LIPSS) on graphene. LIPSS on other materials have been observed for nearly 50 years, but until now, not on graphene. Our findings for LIPSS on multi-layer graphene were consistent with previous reports of LIPSS on other materials, thus classifying them as high spatial frequency LIPSS. LIPSS on multi-layer graphene were generated in an air environment by a linearly polarized femtosecond laser with excitation wavelength λ of 840 nm, pulse duration τ of ∼150 fs, and a fluence F of ∼4.3–4.4 mJ/cm2. The observed LIPSS were perpendicular to the laser polarization and had dimensions of width w of ∼30–40 nm and length l of ∼0.5–1.5 μm, and spatial periods Λ of ∼70–100 nm (∼λ/8–λ/12), amongst the smallest of spatial periods reported for LIPSS on other materials. The spatial period and width of the LIPSS were shown to decrease for an increased number of laser shots. The experimental results support the leading theory behind high spatial frequency LIPSS formation, implying the involvement of surface plasmon polaritons. This work demonstrates a new way to pattern multi-layer graphene in a controllable manner, promising for a variety of emerging graphene/LIPSS applications

  5. Nanoscale Dielectric Capacitors Composed of Graphene and Boron Nitride Layers: A First Principles Study of High-Capacitance at Nanoscale

    OpenAIRE

    Özçelik, V. Ongun; Ciraci, S.

    2013-01-01

    We investigate a nanoscale dielectric capacitor model consisting of two-dimensional, hexagonal h-BN layers placed between two commensurate and metallic graphene layers using self-consistent field density functional theory. The separation of equal amounts of electric charge of different sign in different graphene layers is achieved by applying electric field perpendicular to the layers. The stored charge, energy, and the electric potential difference generated between the metallic layers are c...

  6. Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures

    Directory of Open Access Journals (Sweden)

    Kanji Yasui

    2012-11-01

    Full Text Available We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI structure by utilizing polycrystalline single layer graphene (SLG as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD technique. Cubic SiC (3C-SiC thin film in (111 domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy bandgap of 2.2 eV was confirmed. The Si-O absorption band observed in the grown film can be caused by the out-diffusion of the oxygen atom from SiO2 substrate or oxygen doping during the cleaning process. Further experimental works by optimizing the cleaning process, growth parameters of the present growth method, or by using other growth methods, as well, are expected to realize a high quality SiCOI structure, thereby opening up the way for a breakthrough in the development of advanced ULSIs with multifunctionalities.

  7. Microwave-Assisted Synthesis of Highly-Crumpled, Few-Layered Graphene and Nitrogen-Doped Graphene for Use as High-Performance Electrodes in Capacitive Deionization

    OpenAIRE

    Ahmad Amiri; Goodarz Ahmadi; Mehdi Shanbedi; Maryam Savari; Kazi, S. N.; B. T. Chew

    2015-01-01

    Capacitive deionization (CDI) is a promising procedure for removing various charged ionic species from brackish water. The performance of graphene-based material in capacitive deionization is lower than the expectation of the industry, so highly-crumpled, few-layered graphene (HCG) and highly-crumpled nitrogen-doped graphene (HCNDG) with high surface area have been introduced as promising candidates for CDI electrodes. Thus, HCG and HCNDG were prepared by exfoliation of graphite in the presen...

  8. Understanding and optimising the packing density of perylene bisimide layers on CVD-grown graphene

    Science.gov (United States)

    Berner, Nina C.; Winters, Sinéad; Backes, Claudia; Yim, Chanyoung; Dümbgen, Kim C.; Kaminska, Izabela; Mackowski, Sebastian; Cafolla, Attilio A.; Hirsch, Andreas; Duesberg, Georg S.

    2015-10-01

    The non-covalent functionalisation of graphene is an attractive strategy to alter the surface chemistry of graphene without damaging its superior electrical and mechanical properties. Using the facile method of aqueous-phase functionalisation on large-scale CVD-grown graphene, we investigated the formation of different packing densities in self-assembled monolayers (SAMs) of perylene bisimide derivatives and related this to the amount of substrate contamination. We were able to directly observe wet-chemically deposited SAMs in scanning tunnelling microscopy (STM) on transferred CVD graphene and revealed that the densely packed perylene ad-layers adsorb with the conjugated π-system of the core perpendicular to the graphene substrate. This elucidation of the non-covalent functionalisation of graphene has major implications on controlling its surface chemistry and opens new pathways for adaptable functionalisation in ambient conditions and on the large scale.The non-covalent functionalisation of graphene is an attractive strategy to alter the surface chemistry of graphene without damaging its superior electrical and mechanical properties. Using the facile method of aqueous-phase functionalisation on large-scale CVD-grown graphene, we investigated the formation of different packing densities in self-assembled monolayers (SAMs) of perylene bisimide derivatives and related this to the amount of substrate contamination. We were able to directly observe wet-chemically deposited SAMs in scanning tunnelling microscopy (STM) on transferred CVD graphene and revealed that the densely packed perylene ad-layers adsorb with the conjugated π-system of the core perpendicular to the graphene substrate. This elucidation of the non-covalent functionalisation of graphene has major implications on controlling its surface chemistry and opens new pathways for adaptable functionalisation in ambient conditions and on the large scale. Electronic supplementary information (ESI) available

  9. One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates

    Science.gov (United States)

    Jiang, Shenglin; Zeng, Yike; Zhou, Wenli; Miao, Xiangshui; Yu, Yan

    2016-01-01

    Graphene deposited on various substrates has attracted the attention of the scientific and technical communities for use in a wide range of applications. Graphene on substrates is commonly produced by two types of methods, namely, methods that require a transfer step and transfer-free methods. Compared with methods that require a transfer step, transfer-free methods have a simpler procedure and a lower cost. Thus, transfer-free methods have considerable potential to meet the industrial and commercial demands of production methods. However, some limitations of the current transfer-free methods must be overcome, such as the high temperatures encountered during production, the relatively long manufacturing times, incompatibilities for both rigid and flexible substrates, and an inability to extend the process to other two-dimensional (2-D) atomic crystals. In this work, a room-temperature rubbing method is developed for the rapid transfer-free production of defect-free polycrystalline graphene on rigid and flexible substrates. Starting with inexpensive commercially obtained graphite powder, mono- and few-layer graphene can be fabricated directly on various substrates, with an average production time of less than one minute (from raw graphite to graphene on the substrate). Importantly, this method can be extended to other 2-D atomic crystals.

  10. The Atomic-scale Growth of Large-Area Monolayer Graphene on Single-Crystal Copper Substrates

    OpenAIRE

    Zhao, L; Rim, K. T.; Zhou, H.; He, R.; Heinz, T. F.; Pinczuk, A.; Flynn, G. W.; Pasupathy, A. N.

    2010-01-01

    We study the growth and microscopic structure of large-area graphene monolayers, grown on copper single crystals by chemical vapor deposition (CVD) in ultra-high vacuum (UHV). Using atomic-resolution scanning tunneling microscopy (STM), we find that graphene grows primarily in registry with the underlying copper lattice for both Cu(111) and Cu(100). The graphene has a hexagonal superstructure on Cu(111) with a significant electronic component, whereas it has a linear superstructure on Cu(100)...

  11. Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

    Directory of Open Access Journals (Sweden)

    W. J. Liu

    2016-01-01

    Full Text Available We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

  12. Drag effect of electrons in a system of two graphene layers

    International Nuclear Information System (INIS)

    The drag effect of charge carriers in the system of two graphene layers separated by insulator that is caused by interlayer tunneling is considered. For description of interlayer tunneling the model of randomly positioned tunnel bridges is used. The dependence of transresistivity of the system on the tunnel bridge size for different mutual orientations of graphene layers (hexagonal and Bernal orientations) was calculated. We found that for the Bernal orientation, the transresistivity is sensitive to the tunneling bridge size and tends to zero in the point contact limit. For the hexagonal orientation, the transresistivity weakly depends on the tunneling bridge size. In both cases, the transresistivity of the system strongly depends on the longitudinal magnetic field strength and the difference between the Fermi energies of quasiparticles of graphene layers. This allows one to separate directly in experiments the contribution to the transresistivity caused by tunneling.

  13. Screening properties of graphene layers studied by Kelvin Probe Force Microscopy and Landau Level Spectroscopy

    Science.gov (United States)

    Vetick, John; Lu, Chih-Pin; Altvater, Michael; Duan, Junxi; Li, Guohong; Andrei, Eva Y.

    2015-03-01

    Graphene is one of the best conductors known, but due to its two dimensional structure and the need to support it on insulating substrates, its electronic properties are often masked by substrate-induced random potential fluctuations. In order to realize graphene's full potential for electronic application it is therefore important to understand its screening properties and to find ways to minimize substrate invasiveness. We employed Kelvin Probe Force microscopy (KPFM) to investigate the screening properties of CVD grown graphene crystals as a function of layer number and substrate material using a gated device geometry. The KPFM study was complemented by low temperature scanning tunneling microscopy and Landau level spectroscopy in similar samples and device configurations. Measurements were carried out on single layer, bilayer, trilayer and twisted bilayer samples deposited on SiO2 and hBN substrates. Our findings show that twisted graphene layers provide superior screening of charged impurities and random potentials while at the same time preserving the unique electronic band structure of single layer graphene. Work Supported by DOE-FG02-99ER45742 and NSF DMR 1207108.

  14. Introduction to Graphene

    OpenAIRE

    Bjarni Hannesson 1993

    2016-01-01

    In this report some properties of graphene, a single atomic layer of carbon, are outlined. The structure of graphene is reviewed and its dispersion relation within the tight-binding approximation and the effective mass approximation. The observed half-integer quantum Hall effect in graphene is illustrated and finally bilayer graphene is discussed briefly. Í þessari ritgerð verður fjallað um grafín sem er einnar frumeindar þykkt lag af kolefni. Frumeindirnar í grafíni mynda tvívíða sexhyrni...

  15. Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping

    Science.gov (United States)

    Wang, Tao; Lu, Yunhao; Feng, Y. P.

    2016-04-01

    Graphene grown on a metal surface, Cu(111), with a boron-nitride (h-BN) buffer layer is studied. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the h-BN buffer layer which results in n-doped graphene in the absence of a gate voltage. More importantly, a gap of 0.2 eV, which is comparable to that of a typical narrow gap semiconductor, opens just 0.5 eV below the Fermi level at the Dirac point. The Fermi level can be easily shifted inside this gap to make graphene a semiconductor, which is crucial for graphene-based electronic devices. A graphene-based p-n junction can be realized with graphene eptaxially grown on a metal surface.

  16. Creating large area molecular electronic junctions using atomic layer deposition

    International Nuclear Information System (INIS)

    We demonstrate a technique for creating large area, electrically stable molecular junctions. We use atomic layer deposition to create nanometer thick passivating layers of aluminum oxide on top of self-assembled organic monolayers with hydrophilic terminal groups. This layer acts as a protective barrier and allows simple vapor deposition of the top electrode without short circuits or molecular damage. This method allows nonshorting molecular junctions of up to 9 mm2 to be easily and reliably fabricated. The effect of passivation on molecular monolayers is studied with Auger and x-ray spectroscopy, while electronic transport measurements confirm molecular tunneling as the transport mechanism for these devices

  17. A Review of Atomic Layer Deposition for Nanoscale Devices

    Directory of Open Access Journals (Sweden)

    Edy Riyanto

    2012-12-01

    Full Text Available Atomic layer deposition (ALD is a thin film growth technique that utilizes alternating, self-saturation chemical reactions between gaseous precursors to achieve a deposited nanoscale layers. It has recently become a subject of great interest for ultrathin film deposition in many various applications such as microelectronics, photovoltaic, dynamic random access memory (DRAM, and microelectromechanic system (MEMS. By using ALD, the conformability and extreme uniformity of layers can be achieved in low temperature process. It facilitates to be deposited onto the surface in many variety substrates that have low melting temperature. Eventually it has advantages on the contribution to the wider nanodevices.

  18. Graphene nano-ribbon waveguides

    OpenAIRE

    He, S; X. Zhang; He, Y.

    2013-01-01

    Graphene as a one-atom-thick platform for infrared metamaterial plays an important role in optical science and engineering. Here we study the unique properties of some plasmonic waveguides based on graphene nano-ribbon. It is found that a graphene ribbon of finite width leads to the occurrence of coupled edge mode. The single-mode region of a single freestanding graphene ribbon is identified at a fixed frequency of 30 THz. A low-loss waveguide structure, consisting of a graphene layer, a sili...

  19. Cost-Effective Systems for Atomic Layer Deposition

    Science.gov (United States)

    Lubitz, Michael; Medina, Phillip A., IV; Antic, Aleks; Rosin, Joseph T.; Fahlman, Bradley D.

    2014-01-01

    Herein, we describe the design and testing of two different home-built atomic layer deposition (ALD) systems for the growth of thin films with sub-monolayer control over film thickness. The first reactor is a horizontally aligned hot-walled reactor with a vacuum purging system. The second reactor is a vertically aligned cold-walled reactor with a…

  20. Atomic Layer Deposited Catalysts for Fuel Cell Applications

    DEFF Research Database (Denmark)

    Johansson, Anne-Charlotte Elisabeth Birgitta

    techniques. Atomic layer deposition (ALD), on the other hand, is a highly suitable and still relatively unexplored approach for the synthesis of noble metal catalysts. It is a vapor phase growth method, primarily used to deposit thin lms. ALD is based on self-limiting chemical reactions of alternately...

  1. Silicon protected with atomic layer deposited TiO2

    DEFF Research Database (Denmark)

    Seger, Brian; Tilley, David S.; Pedersen, Thomas;

    2013-01-01

    The semiconducting materials used for photoelectrochemical (PEC) water splitting must withstand the corrosive nature of the aqueous electrolyte over long time scales in order to be a viable option for large scale solar energy conversion. Here we demonstrate that atomic layer deposited titanium...

  2. Substrate effect modulates adhesion and proliferation of fibroblast on graphene layer.

    Science.gov (United States)

    Lin, Feng; Du, Feng; Huang, Jianyong; Chau, Alicia; Zhou, Yongsheng; Duan, Huiling; Wang, Jianxiang; Xiong, Chunyang

    2016-10-01

    Graphene is an emerging candidate for biomedical applications, including biosensor, drug delivery and scaffold biomaterials. Cellular functions and behaviors on different graphene-coated substrates, however, still remain elusive to a great extent. This paper explored the functional responses of cells such as adhesion and proliferation, to different kinds of substrates including coverslips, silicone, polydimethylsiloxane (PDMS) with different curing ratios, PDMS treated with oxygen plasma, and their counterparts coated with single layer graphene (SLG). Specifically, adherent cell number, spreading area and cytoskeleton configuration were exploited to characterize cell-substrate adhesion ability, while MTT assay was employed to test the proliferation capability of fibroblasts. Experimental outcome demonstrated graphene coating had excellent cytocompatibility, which could lead to an increase in early adhesion, spreading, proliferation, and remodeling of cytoskeletons of fibroblast cells. Notably, it was found that the underlying substrate effect, e.g., stiffness of substrate materials, could essentially regulate the adhesion and proliferation of cells cultured on graphene. The stiffer the substrates were, the stronger the abilities of adhesion and proliferation of fibroblasts were. This study not only deepens our understanding of substrate-modulated interfacial interactions between live cells and graphene, but also provides a valuable guidance for the design and application of graphene-based biomaterials in biomedical engineering. PMID:27451366

  3. Atomic transport at charged graphene: why hydrogen and oxygen are so different

    OpenAIRE

    Nguyen, Manh-Thuong; Phong, Pham Nam

    2015-01-01

    Using density-functional calculations, we show that electron or hole doped graphene can strongly change the mobility of adsorbed atoms H and O. Interestingly, charge doping affects the diffusion of H and O in the opposite way, namely, electron doping increases/reduces while hole doping reduces/increases the diffusion barrier of H/O, respectively. Specifically, on neutral graphene the diffusion barriers of O and H are 0.74 and 1.01 eV, which are, upon a hole doping of $+5.9\\times10^{13}$ cm$^{...

  4. Thermal transport across graphene and single layer hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jingchao, E-mail: zhang@unl.edu, E-mail: yyue@whu.edu.cn [Holland Computing Center, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Hong, Yang [Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Yue, Yanan, E-mail: zhang@unl.edu, E-mail: yyue@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, Wuhan, Hubei 430072 (China)

    2015-04-07

    As the dimensions of nanocircuits and nanoelectronics shrink, thermal energies are being generated in more confined spaces, making it extremely important and urgent to explore for efficient heat dissipation pathways. In this work, the phonon energy transport across graphene and hexagonal boron-nitride (h-BN) interface is studied using classic molecular dynamics simulations. Effects of temperature, interatomic bond strength, heat flux direction, and functionalization on interfacial thermal transport are investigated. It is found out that by hydrogenating graphene in the hybrid structure, the interfacial thermal resistance (R) between graphene and h-BN can be reduced by 76.3%, indicating an effective approach to manipulate the interfacial thermal transport. Improved in-plane/out-of-plane phonon couplings and broadened phonon channels are observed in the hydrogenated graphene system by analyzing its phonon power spectra. The reported R results monotonically decrease with temperature and interatomic bond strengths. No thermal rectification phenomenon is observed in this interfacial thermal transport. Results reported in this work give the fundamental knowledge on graphene and h-BN thermal transport and provide rational guidelines for next generation thermal interface material designs.

  5. Interface engineering of layer-by-Layer stacked graphene anodes for high-performance organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu; Tong, Shi Wun; Loh, Kian Ping [Department of Chemistry, National University of Singapore (Singapore); Xu, Xiang Fan; Oezyilmaz, Barbaros [Department of Physics, National University of Singapore (Singapore)

    2011-04-05

    An interface engineering process to deploy graphene film as the anode in poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM)-based polymer solar cells is demonstrated. By modifying the interface between the graphene anode and the photoactive layer with MoO{sub 3} and poly(3,4-ethylenedioythiophene):poly(styrenesulfonate) (PEDOT:PSS), the power conversion efficiency of the solar cells reaches {approx}83.3% of control devices that use an indium tin oxide (ITO) anode. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Flexible bactericidal graphene oxide–chitosan layers for stem cell proliferation

    Energy Technology Data Exchange (ETDEWEB)

    Mazaheri, M. [Department of Materials Science and Engineering, Sharif University of Technology, PO Box 11365-9466, Tehran (Iran, Islamic Republic of); Akhavan, O., E-mail: oakhavan@sharif.edu [Department of Physics, Sharif University of Technology, PO Box 11155-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, PO Box 14588-89694, Tehran (Iran, Islamic Republic of); Simchi, A. [Department of Materials Science and Engineering, Sharif University of Technology, PO Box 11365-9466, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, PO Box 14588-89694, Tehran (Iran, Islamic Republic of)

    2014-05-01

    Highlights: • Fabrication of flexible graphene oxide–chitosan nanocomposite layers was reported. • The flexibility of the chitosan layers were improved by adding graphene oxide sheets. • The nanocomposite layers with 1.5 wt% graphene oxide content showed yielded flexible and antibacterial surfaces for stem cell proliferation. - Abstract: Graphene oxide (GO)–chitosan composite layers with stacked layer structures were synthesized using chemically exfoliated GO sheets (with lateral dimensions of ∼1 μm and thickness of ∼1 nm), and applied as antibacterial and flexible nanostructured templates for stem cell proliferation. By increasing the GO content from zero to 6 wt%, the strength and elastic modulus of the layers increased ∼80% and 45%, respectively. Similar to the chitosan layer, the GO–chitosan composite layers showed significant antibacterial activity (>77% inactivation after only 3 h) against Staphylococcus aureus bacteria. Surface density of the actin cytoskeleton fibers of human mesenchymal stem cells (hMSCs) cultured on the chitosan and GO(1.5 wt%)–chitosan composite layers was found nearly the same, while it significantly decreased by increasing the GO content to 3 and 6 wt%. Our results indicated that although a high concentration of GO in the chitosan layer (here, 6 wt%) could decelerate the proliferation of the hMSCs on the flexible layer, a low concentration of GO (i.e., 1.5 wt%) not only resulted in biocompatibility but also kept the mechanical flexibility of the self-sterilized layers for high proliferation of hMSCs.

  7. Flexible bactericidal graphene oxide–chitosan layers for stem cell proliferation

    International Nuclear Information System (INIS)

    Highlights: • Fabrication of flexible graphene oxide–chitosan nanocomposite layers was reported. • The flexibility of the chitosan layers were improved by adding graphene oxide sheets. • The nanocomposite layers with 1.5 wt% graphene oxide content showed yielded flexible and antibacterial surfaces for stem cell proliferation. - Abstract: Graphene oxide (GO)–chitosan composite layers with stacked layer structures were synthesized using chemically exfoliated GO sheets (with lateral dimensions of ∼1 μm and thickness of ∼1 nm), and applied as antibacterial and flexible nanostructured templates for stem cell proliferation. By increasing the GO content from zero to 6 wt%, the strength and elastic modulus of the layers increased ∼80% and 45%, respectively. Similar to the chitosan layer, the GO–chitosan composite layers showed significant antibacterial activity (>77% inactivation after only 3 h) against Staphylococcus aureus bacteria. Surface density of the actin cytoskeleton fibers of human mesenchymal stem cells (hMSCs) cultured on the chitosan and GO(1.5 wt%)–chitosan composite layers was found nearly the same, while it significantly decreased by increasing the GO content to 3 and 6 wt%. Our results indicated that although a high concentration of GO in the chitosan layer (here, 6 wt%) could decelerate the proliferation of the hMSCs on the flexible layer, a low concentration of GO (i.e., 1.5 wt%) not only resulted in biocompatibility but also kept the mechanical flexibility of the self-sterilized layers for high proliferation of hMSCs

  8. Optical Band Gap and Thermal Diffusivity of Polypyrrole-Nanoparticles Decorated Reduced Graphene Oxide Nanocomposite Layer

    OpenAIRE

    Amir Reza Sadrolhosseini; Suraya Abdul Rashid; Noor, A. S. M.; Alireza Kharazmi; Lim, H. N.; Mohd Adzir Mahdi

    2016-01-01

    A polypyrrole-nanoparticles reduced graphene oxide nanocomposite layer was prepared using electrochemical method. The prepared samples were characterized using Fourier transform infrared spectroscopy, field emission scanning electron microscopy, and UV-visible spectroscopy. The band gap of nanocomposite layers was calculated from UV-visible spectra and the thermal diffusivity of layers was measured using a photoacoustic technique. As experimental results, the optical band gap was in the range...

  9. Band gap engineering for single-layer graphene by using slow Li+ ions

    Science.gov (United States)

    Ryu, Mintae; Lee, Paengro; Kim, Jingul; Park, Heemin; Chung, Jinwook

    2016-08-01

    In order to utilize the superb electronic properties of graphene in future electronic nano-devices, a dependable means of controlling the transport properties of its Dirac electrons has to be devised by forming a tunable band gap. We report on the ion-induced modification of the electronic properties of single-layer graphene (SLG) grown on a SiC(0001) substrate by doping low-energy (5 eV) Li+ ions. We find the opening of a sizable and tunable band gap up to 0.85 eV, which depends on the Li+ ion dose as well as the following thermal treatment, and is the largest band gap in the π-band of SLG by any means reported so far. Our Li 1s core-level data together with the valence band suggest that Li+ ions do not intercalate below the topmost graphene layer, but cause a significant charge asymmetry between the carbon sublattices of SLG to drive the opening of the band gap. We thus provide a route to producing a tunable graphene band gap by doping Li+ ions, which may play a pivotal role in the utilization of graphene in future graphene-based electronic nano-devices.

  10. Modification of the structural and electrical properties of graphene layers by Pt adsorbates

    International Nuclear Information System (INIS)

    The properties of graphene are strongly affected by metal adsorbates and clusters on graphene. Here, we study the effect of a thin layer of platinum (Pt) metal on exfoliated single, bi- and trilayer graphene and on chemical vapor deposition-grown single-layer graphene by using Raman spectroscopy and transport measurements. The Raman spectra and transport measurements show that Pt affects the structure as well as the electronic properties of graphene. The shift of peak frequencies, intensities and widths of the Raman bands were analyzed after the deposition of Pt with different thicknesses (1, 3, 5 nm) on the graphene. The shifts in the G and 2D peak positions of the Raman spectra indicate the n-type doping effect by the Pt metal. The doping effect was also confirmed by gate-voltage dependent resistivity measurements. The doping effect by the Pt metal is stable under ambient conditions, and the doping intensity increases with the increasing Pt deposition without inducing a severe degradation of the charge carrier mobility. (paper)

  11. Band gap engineering for single-layer graphene by using slow Li(+) ions.

    Science.gov (United States)

    Ryu, Mintae; Lee, Paengro; Kim, Jingul; Park, Heemin; Chung, Jinwook

    2016-08-01

    In order to utilize the superb electronic properties of graphene in future electronic nano-devices, a dependable means of controlling the transport properties of its Dirac electrons has to be devised by forming a tunable band gap. We report on the ion-induced modification of the electronic properties of single-layer graphene (SLG) grown on a SiC(0001) substrate by doping low-energy (5 eV) Li(+) ions. We find the opening of a sizable and tunable band gap up to 0.85 eV, which depends on the Li(+) ion dose as well as the following thermal treatment, and is the largest band gap in the π-band of SLG by any means reported so far. Our Li 1s core-level data together with the valence band suggest that Li(+) ions do not intercalate below the topmost graphene layer, but cause a significant charge asymmetry between the carbon sublattices of SLG to drive the opening of the band gap. We thus provide a route to producing a tunable graphene band gap by doping Li(+) ions, which may play a pivotal role in the utilization of graphene in future graphene-based electronic nano-devices. PMID:27345294

  12. CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

    OpenAIRE

    Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

    2014-01-01

    Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especiall...

  13. Scattering theory of electron transport in single layer graphene with a time-periodic potential

    International Nuclear Information System (INIS)

    We applied the scattering approach to studying the transport properties of charge carriers through single layer graphene in the presence of a time-periodic potential. Using the method, expressions for the second-quantized current operator, conductivity and shot noise are obtained. The results obtained in this study demonstrate that the applied external field provides sidebands for charge carriers to tunnel through the graphene, and these sidebands changed the transport properties of the system. The results obtained in this study might be of interest to basic understanding of photon-assisted tunneling (PAT) and designers of electron devices based on graphene. - Highlights: • We study the transport properties in graphene with a time-periodic potential. • Expressions for the current operator, conductivity, shot noise are obtained. • Time-periodic potential makes the transport properties may change as a result

  14. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    Science.gov (United States)

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-07-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid.

  15. Biomolecules Electrochemical Sensing Properties of a PMo11V@N-Doped Few Layer Graphene Nanocomposite

    OpenAIRE

    Diana M. Fernandes; Marta Nunes; de Carvalho, Ricardo J.; Revathi Bacsa; Israel-Martyr Mbomekalle; Philippe Serp; Pedro Oliveira; Cristina Freire

    2015-01-01

    A novel hybrid nanocomposite, PMo11V@N-doped few layer graphene, was prepared by a one-step protocol through direct immobilization of the tetrabutylammonium salt of a vanadium-substituted phosphomolybdate (PMo11V) onto N-doped few layer graphene (N-FLG). The nanocomposite characterization by FTIR and XPS confirmed its successful synthesis. Glassy carbon modified electrodes with PMo11V and PMo11V@N-FLG showed cyclic voltammograms consistent with surface-confined redox processes attributed to M...

  16. Quantifying defects in N-layer graphene via a phenomenological model of Raman spectroscopy

    Science.gov (United States)

    Giro, Ronaldo; Archanjo, Braulio S.; Martins Ferreira, Erlon H.; Capaz, Rodrigo B.; Jorio, Ado; Achete, Carlos A.

    2014-01-01

    We construct a model to obtain the density of point defects in N-layer graphene by combining Raman spectroscopy and the TRIM (Transport Range of Ions in Matter) simulation package. The model relates the intensity (or area) ratio of graphene's D and G bands to the defect density on each layer due to Ar+ bombardment. Our method is effective for ion fluences ranging from 1011 to ∼1014 Ar+/cm-2 and it should be in principle extendable to any kind of ion and energy.

  17. Atomic and molecular layer deposition for surface modification

    International Nuclear Information System (INIS)

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al2O3 due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO2. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt

  18. Atomic and molecular layer deposition for surface modification

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, PO Box 1000, FI‐02044 VTT (Finland); Sievänen, Jenni; Salo, Erkki; Heikkilä, Pirjo; Kenttä, Eija [VTT Technical Research Centre of Finland, PO Box 1000, FI‐02044 VTT (Finland); Johansson, Leena-Sisko, E-mail: leena-sisko.johansson@aalto.fi [Aalto University, School of Chemical Technology, Department of Forest Products Technology, PO Box 16100, FI‐00076 AALTO (Finland); Koskinen, Jorma T.; Harlin, Ali [VTT Technical Research Centre of Finland, PO Box 1000, FI‐02044 VTT (Finland)

    2014-06-01

    Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

  19. Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers

    International Nuclear Information System (INIS)

    Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide

  20. Interaction between single gold atom and the graphene edge: A study via aberration-corrected transmission electron microscopy

    KAUST Repository

    Wang, Hongtao

    2012-01-01

    Interaction between single noble metal atoms and graphene edges has been investigated via aberration-corrected and monochromated transmission electron microscopy. A collective motion of the Au atom and the nearby carbon atoms is observed in transition between energy-favorable configurations. Most trapping and detrapping processes are assisted by the dangling carbon atoms, which are more susceptible to knock-on displacements by electron irradiation. Thermal energy is lower than the activation barriers in transition among different energy-favorable configurations, which suggests electron-beam irradiation can be an efficient way of engineering the graphene edge with metal atoms. © 2012 The Royal Society of Chemistry.

  1. Electrochemical properties of CVD grown pristine graphene: monolayer- vs. quasi-graphene.

    Science.gov (United States)

    Brownson, Dale A C; Varey, Sarah A; Hussain, Fiazal; Haigh, Sarah J; Banks, Craig E

    2014-01-01

    We report the electrochemical properties of pristine monolayer, double layer and few-layer (termed quasi-) graphene grown via CVD and transferred using PMMA onto an insulating substrate (silicon dioxide wafers). Characterisation has been performed by Raman spectroscopy, optical spectroscopy, Atomic Force Microscopy and X-ray Photoelectron Spectroscopy, revealing 'true' pristine single-layer graphene (O/C of 0.05) at the former and pristine quasi-graphene at the latter (O/C of 0.07); the term "quasi-graphene" is coined due to the surface comprising on average 4-graphene-layers. The graphene electrodes are electrochemically characterised using both inner-sphere and outer-sphere redox probes with electrochemical performances of the graphene electrodes compared to other available graphitic electrodes, namely that of basal- and edge- plane pyrolytic graphite electrodes constructed from Highly Ordered Pyrolytic Graphite (HOPG), with information on heterogeneous rate constants (k(o)) obtained. The electrochemical rate constants are predominantly influenced by the electronic properties of the graphene surfaces. Monolayer graphene is found to exhibit slow heterogeneous electron transfer (HET) kinetics towards the redox probes studied, with HET rates ca. 2 and 8 times faster at quasi-graphene and HOPG respectively, relative to that of the monolayer graphene electrode. Critically contrasting the performance of monolayer graphene to quasi-graphene and HOPG electrodes reveals that increasing the number of graphene layers results in improved electrochemical properties, where in terms of the electrochemical reversibility of the probes studied: monolayer-graphene graphene electron transfer kinetics at graphitic materials, the slow HET rates at pristine single-layer graphene electrodes are likely due to graphene's fundamental geometry, which comprises a small edge plane and large basal plane contribution. In the case of quasi-graphene and HOPG, they possess increasing global

  2. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    Directory of Open Access Journals (Sweden)

    Suk In Park

    2015-01-01

    Full Text Available We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  3. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Park, Suk In; Tchoe, Youngbin; Baek, Hyeonjun; Hyun, Jerome K.; Yi, Gyu-Chul, E-mail: njkim36@gmail.com, E-mail: gcyi@snu.ac.kr [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Heo, Jaehyuk [Advanced Development Team, LED Business, Samsung Electronics Co., Ltd., San#24 Nongseo-Dong, Giheung-Gu, Yongin-City, Gyeonggi-Do 446–711 (Korea, Republic of); Jo, Janghyun; Kim, Miyoung [Department of Materials Science and Engineering, Seoul National University, Seoul 151–744 (Korea, Republic of); Kim, Nam-Jung, E-mail: njkim36@gmail.com, E-mail: gcyi@snu.ac.kr [Department of Physics and Chemistry, Korea Military Academy, Seoul (Korea, Republic of)

    2015-01-01

    We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm{sup 2} at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  4. Plasmon Excitations of Multi-layer Graphene on a Conducting Substrate

    Science.gov (United States)

    Gumbs, Godfrey; Iurov, Andrii; Wu, Jhao-Ying; Lin, M. F.; Fekete, Paula

    2016-02-01

    We predict the existence of low-frequency nonlocal plasmons at the vacuum-surface interface of a superlattice of N graphene layers interacting with conducting substrate. We derive a dispersion function that incorporates the polarization function of both the graphene monolayers and the semi-infinite electron liquid at whose surface the electrons scatter specularly. We find a surface plasmon-polariton that is not damped by particle-hole excitations or the bulk modes and which separates below the continuum mini-band of bulk plasmon modes. The surface plasmon frequency of the hybrid structure always lies below , the surface plasmon frequency of the conducting substrate. The intensity of this mode depends on the distance of the graphene layers from the conductor’s surface, the energy band gap between valence and conduction bands of graphene monolayer and, most importantly, on the number of two-dimensional layers. For a sufficiently large number of layers the hybrid structure has no surface plasmon. The existence of plasmons with different dispersion relations indicates that quasiparticles with different group velocity may coexist for various ranges of wavelengths determined by the number of layers in the superlattice.

  5. Graphene and Graphene Nanomesh Spintronics

    Directory of Open Access Journals (Sweden)

    Junji Haruyama

    2013-12-01

    Full Text Available Spintronics, which manipulate spins but not electron charge, are highly valued as energy and thermal dissipationless systems. A variety of materials are challenging the realization of spintronic devices. Among those, graphene, a carbon mono-atomic layer, is very promising for efficient spin manipulation and the creation of a full spectrum of beyond-CMOS spin-based nano-devices. In the present article, the recent advancements in graphene spintronics are reviewed, introducing the observation of spin coherence and the spin Hall effect. Some research has reported the strong spin coherence of graphene. Avoiding undesirable influences from the substrate are crucial. Magnetism and spintronics arising from graphene edges are reviewed based on my previous results. In spite of carbon-based material with only sp2 bonds, the zigzag-type atomic structure of graphene edges theoretically produces spontaneous spin polarization of electrons due to mutual Coulomb interaction of extremely high electron density of states (edge states localizing at the flat energy band. We fabricate honeycomb-like arrays of low-defect hexagonal nanopores (graphene nanomeshes; GNMs on graphenes, which produce a large amount of zigzag pore edges, by using a nonlithographic method (nanoporous alumina templates and critical temperature annealing under high vacuum and hydrogen atmosphere. We observe large-magnitude ferromagnetism, which arises from polarized spins localizing at the hydrogen-terminated zigzag-nanopore edges of the GNMs, even at room temperature. Moreover, spin pumping effects are found for magnetic fields applied in parallel with the few-layer GNM planes. Strong spin coherence and spontaneously polarized edge spins of graphene can be expected to lead to novel spintronics with invisible, flexible, and ultra-light (wearable features.

  6. Electronic Transport in Strained Graphene

    OpenAIRE

    Aguilera, Juan Luis

    2015-01-01

    Graphene is a single atomic layer material with exceptional electronic and mechanical properties. Graphene has formed the basis of many nanoelectromechanical and strain sensing devices. However, the ultimate limit of miniaturization of such sensors has not yet been ascertained. In this work we present the fabrication and electrical characterization of nanoscale pressure sensors realized from suspended graphene membrane devices.We start in chapter 1 by describing the elemental electronic prope...

  7. Friction and conductance imaging of sp2- and sp3-hybridized subdomains on single-layer graphene oxide

    Science.gov (United States)

    Lee, Hyunsoo; Son, Narae; Jeong, Hu Young; Kim, Tae Gun; Bang, Gyeong Sook; Kim, Jong Yun; Shim, Gi Woong; Goddeti, Kalyan C.; Kim, Jong Hun; Kim, Namdong; Shin, Hyun-Joon; Kim, Wondong; Kim, Sehun; Choi, Sung-Yool; Park, Jeong Young

    2016-02-01

    We investigated the subdomain structures of single-layer graphene oxide (GO) by characterizing local friction and conductance using conductive atomic force microscopy. Friction and conductance mapping showed that a single-layer GO flake has subdomains several tens to a few hundreds of nanometers in lateral size. The GO subdomains exhibited low friction (high conductance) in the sp2-rich phase and high friction (low conductance) in the sp3-rich phase. Current-voltage spectroscopy revealed that the local current flow in single-layer GO depends on the quantity of hydroxyl and carboxyl groups, and epoxy bridges within the 2-dimensional carbon layer. The presence of subdomains with different sp2/sp3 carbon ratios on a GO flake was also confirmed by chemical mapping using scanning transmission X-ray microscopy. These results suggest that spatial mapping of the friction and conductance can be used to rapidly identify the composition of heterogeneous single-layer GO at nanometer scale, which is essential for understanding charge transport in nanoelectronic devices.We investigated the subdomain structures of single-layer graphene oxide (GO) by characterizing local friction and conductance using conductive atomic force microscopy. Friction and conductance mapping showed that a single-layer GO flake has subdomains several tens to a few hundreds of nanometers in lateral size. The GO subdomains exhibited low friction (high conductance) in the sp2-rich phase and high friction (low conductance) in the sp3-rich phase. Current-voltage spectroscopy revealed that the local current flow in single-layer GO depends on the quantity of hydroxyl and carboxyl groups, and epoxy bridges within the 2-dimensional carbon layer. The presence of subdomains with different sp2/sp3 carbon ratios on a GO flake was also confirmed by chemical mapping using scanning transmission X-ray microscopy. These results suggest that spatial mapping of the friction and conductance can be used to rapidly identify

  8. Ultrafast Non-Thermal Electron Dynamics in Single Layer Graphene

    Directory of Open Access Journals (Sweden)

    Novoselov K.S.

    2013-03-01

    Full Text Available We study the ultrafast dynamics of non-thermal electron relaxation in graphene upon impulsive excitation. The 10-fs resolution two color pump-probe allows us to unveil the non-equilibrium electron gas decay at early times.

  9. Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

    Science.gov (United States)

    Chung, Ting Fung; Shen, Tian; Cao, Helin; Jauregui, Luis A.; Wu, Wei; Yu, Qingkai; Newell, David; Chen, Yong P.

    2013-04-01

    The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.

  10. Adsorption of metal atoms at a buckled graphene grain boundary using model potentials

    International Nuclear Information System (INIS)

    Two model potentials have been evaluated with regard to their ability to model adsorption of single metal atoms on a buckled graphene grain boundary. One of the potentials is a Lennard-Jones potential parametrized for gold and carbon, while the other is a bond-order potential parametrized for the interaction between carbon and platinum. Metals are expected to adsorb more strongly to grain boundaries than to pristine graphene due to their enhanced adsorption at point defects resembling those that constitute the grain boundary. Of the two potentials considered here, only the bond-order potential reproduces this behavior and predicts the energy of the adsorbate to be about 0.8 eV lower at the grain boundary than on pristine graphene. The Lennard-Jones potential predicts no significant difference in energy between adsorbates at the boundary and on pristine graphene. These results indicate that the Lennard-Jones potential is not suitable for studies of metal adsorption on defects in graphene, and that bond-order potentials are preferable

  11. Adsorption of metal atoms at a buckled graphene grain boundary using model potentials

    Energy Technology Data Exchange (ETDEWEB)

    Helgee, Edit E.; Isacsson, Andreas [Department of Applied Physics, Chalmers University of Technology, SE-412 96, Göteborg (Sweden)

    2016-01-15

    Two model potentials have been evaluated with regard to their ability to model adsorption of single metal atoms on a buckled graphene grain boundary. One of the potentials is a Lennard-Jones potential parametrized for gold and carbon, while the other is a bond-order potential parametrized for the interaction between carbon and platinum. Metals are expected to adsorb more strongly to grain boundaries than to pristine graphene due to their enhanced adsorption at point defects resembling those that constitute the grain boundary. Of the two potentials considered here, only the bond-order potential reproduces this behavior and predicts the energy of the adsorbate to be about 0.8 eV lower at the grain boundary than on pristine graphene. The Lennard-Jones potential predicts no significant difference in energy between adsorbates at the boundary and on pristine graphene. These results indicate that the Lennard-Jones potential is not suitable for studies of metal adsorption on defects in graphene, and that bond-order potentials are preferable.

  12. Local atomic and electronic structure of boron chemical doping in monolayer graphene.

    Science.gov (United States)

    Zhao, Liuyan; Levendorf, Mark; Goncher, Scott; Schiros, Theanne; Pálová, Lucia; Zabet-Khosousi, Amir; Rim, Kwang Taeg; Gutiérrez, Christopher; Nordlund, Dennis; Jaye, Cherno; Hybertsen, Mark; Reichman, David; Flynn, George W; Park, Jiwoong; Pasupathy, Abhay N

    2013-10-01

    We use scanning tunneling microscopy and X-ray spectroscopy to characterize the atomic and electronic structure of boron-doped and nitrogen-doped graphene created by chemical vapor deposition on copper substrates. Microscopic measurements show that boron, like nitrogen, incorporates into the carbon lattice primarily in the graphitic form and contributes ~0.5 carriers into the graphene sheet per dopant. Density functional theory calculations indicate that boron dopants interact strongly with the underlying copper substrate while nitrogen dopants do not. The local bonding differences between graphitic boron and nitrogen dopants lead to large scale differences in dopant distribution. The distribution of dopants is observed to be completely random in the case of boron, while nitrogen displays strong sublattice clustering. Structurally, nitrogen-doped graphene is relatively defect-free while boron-doped graphene films show a large number of Stone-Wales defects. These defects create local electronic resonances and cause electronic scattering, but do not electronically dope the graphene film. PMID:24032458

  13. Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene–graphene composite layers for flexible thin film transistors with a polymer gate dielectric

    International Nuclear Information System (INIS)

    Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene–graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene–graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm2 V−1 s−1 and a threshold voltage of −0.7 V at V gs = −40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm2 V−1 s−1 and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies. (paper)

  14. Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.

    Science.gov (United States)

    Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

    2014-02-28

    Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies. PMID:24492205

  15. Atomic layer deposition of alternative glass microchannel plates

    International Nuclear Information System (INIS)

    The technique of atomic layer deposition (ALD) has enabled the development of alternative glass microchannel plates (MCPs) with independently tunable resistive and emissive layers, resulting in excellent thickness uniformity across the large area (20 × 20 cm), high aspect ratio (60:1 L/d) glass substrates. Furthermore, the use of ALD to deposit functional layers allows the optimal substrate material to be selected, such as borosilicate glass, which has many benefits compared to the lead-oxide glass used in conventional MCPs, including increased stability and lifetime, low background noise, mechanical robustness, and larger area (at present up to 400 cm2). Resistively stable, high gain MCPs are demonstrated due to the deposition of uniform ALD resistive and emissive layers on alternative glass microcapillary substrates. The MCP performance characteristics reported include increased stability and lifetime, low background noise (0.04 events cm−2 s−1), and low gain variation (±5%)

  16. Scanning tunneling microscopy of atomically precise graphene nanoribbons exfoliated onto H:Si(100)

    Science.gov (United States)

    Radocea, Adrian; Mehdi Pour, Mohammad; Vo, Timothy; Shekhirev, Mikhail; Sinitskii, Alexander; Lyding, Joseph

    Atomically precise graphene nanoribbons (GNRs) are promising materials for next generation transistors due to their well-controlled bandgaps and the high thermal conductivity of graphene. The solution synthesis of graphene nanoribbons offers a pathway towards scalable manufacturing. While scanning tunneling microscopy (STM) can access size scales required for characterization, solvent residue increases experimental difficulty and precludes band-gap determination via scanning tunneling spectroscopy (STS). Our work addresses this challenge through a dry contact transfer method that cleanly transfers solution-synthesized GNRs onto H:Si(100) under UHV using a fiberglass applicator. The semiconducting silicon surface avoids problems with image charge screening enabling intrinsic bandgap measurements. We characterize the nanoribbons using STM and STS. For chevron GNRs, we find a 1.6 eV bandgap, in agreement with computational modeling, and map the electronic structure spatially with detailed spectra lines and current imaging tunneling spectroscopy. Mapping the electronic structure of graphene nanoribbons is an important step towards taking advantage of the ability to form atomically precise nanoribbons and finely tune their properties.

  17. Thermal transport in low-dimensional systems: the case of Graphene and single layer Boron Nitride

    Science.gov (United States)

    Pereira, Luiz Felipe; Donadio, Davide

    2013-03-01

    Low-dimensional systems present unusual transport properties in comparison to bulk materials. In contrast with the three-dimensional case, in one- and two-dimensions heat transport models predict a divergence of the thermal conductivity with system size. In reality, in a low-dimensional system the mean-free-path of heat carriers (phonons) becomes comparable to the micrometer size of experimental samples. Recent developments in nanostructure fabrication allow a direct comparison between theory and experiments for such low-dimensional systems. We perform extensive molecular dynamics simulations of heat transport in graphene and single layer BN, in order to clarify the behavior of the thermal conductivity in realistic low-dimensional systems. In particular, we address the influence of system size on the simulation results. Equilibrium molecular dynamics predicts a convergence of the thermal conductivity with system size, even for systems with less than one hundred nanometers and thousands of atoms. Meanwhile, large scale non-equilibrium molecular dynamics shows a divergence of the thermal conductivity with system size up to the micrometer scale. We analyse the discrepancy between methods in terms of perturbations in phonon populations induced by the non-equilibrium regime.

  18. High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors.

    Science.gov (United States)

    Youn, Hee-Chang; Bak, Seong-Min; Kim, Myeong-Seong; Jaye, Cherno; Fischer, Daniel A; Lee, Chang-Wook; Yang, Xiao-Qing; Roh, Kwang Chul; Kim, Kwang-Bum

    2015-06-01

    A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007 m(2)  g(-1) ), high electrical conductivity (1532 S m(-1) ), and low oxygen content (1.5 wt %) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291 F g(-1) at a current density of 1 A g(-1) , and a capacitance of 261 F g(-1) was retained at 50 A g(-1) , which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96 % of the initial specific capacitance after 100 000 cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of π conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content. PMID:25916491

  19. Photoenhanced atomic layer epitaxy. Hikari reiki genshiso epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y. (Toshiba corp., Tokyo (Japan))

    1991-10-01

    The growth temperature range was greatly expanded of atomic layer epitaxy (ALE) expected as the growth process of ultra-thin stacks. Ga layers and As layers were formed one after the other on a GaAs substrate in the atmosphere of trimethylgallium (TMG) or AsH{sub 2} supplied alternately, by KrF excimer laser irradiation normal to the substrate. As a result, the growth temperature range was 460-540{degree}C nearly 10 times that of 500 {plus minus} several degrees centigrade in conventional thermal growth method. Based on the experimental result where light absorption of source molecules adsorbed on a substrate surface was larger than that under gaseous phase condition, new adsorbed layer enhancement model was proposed to explain above irradiation effect verifying it by experiments. As this photoenhancement technique is applied to other materials, possible fabrication of new crystal structures as a super lattice with ultra-thin stacks of single atomic layers is expected because of a larger freedom in material combination for hetero-ALE. 11 refs., 7 figs.

  20. Photocatalytic Nanostructuring of Graphene Guided by Block Copolymer Self-Assembly

    DEFF Research Database (Denmark)

    Wang, Zhongli; Li, Tao; Schulte, Lars;

    2016-01-01

    graphene nanomesh was fabricated by photocatalysis of single-layer graphene suspended on top of TiO2-covered nanopillars, which were produced by combining block copolymer nanolithography with atomic layer deposition. Graphene nanoribbons were also prepared by the same method applied to a line-forming block...

  1. Monocrystalline zinc oxide films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wachnicki, L., E-mail: lwachn@ifpan.edu.p [Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland); Krajewski, T.; Luka, G. [Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland); Witkowski, B. [Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Warszawa (Poland); Kowalski, B.; Kopalko, K.; Domagala, J.Z. [Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland); Guziewicz, M. [Institute of Electron Technology (ITE), al. Lotnikow 32/46, Warsaw 02-668 (Poland); Godlewski, M. [Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland); Cardinal Stefan Wyszynski University, College of Science, Department of Mathematics and Natural Sciences, Warszawa (Poland); Guziewicz, E. [Polish Academy of Sciences, Institute of Physics, al. Lotnikow 32/46, Warszawa 02-668 (Poland)

    2010-06-01

    In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 {sup o}C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07{sup o}. Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

  2. Examining the impact of multi-layer graphene using cellular and amphibian models

    Science.gov (United States)

    Muzi, Laura; Mouchet, Florence; Cadarsi, Stéphanie; Janowska, Izabela; Russier, Julie; Ménard-Moyon, Cécilia; Risuleo, Gianfranco; Soula, Brigitte; Galibert, Anne-Marie; Flahaut, Emmanuel; Pinelli, Eric; Gauthier, Laury; Bianco, Alberto

    2016-06-01

    In the last few years, graphene has been defined as the revolutionary material showing an incredible expansion in industrial applications. Different graphene forms have been applied in several contexts, spreading from energy technologies and electronics to food and agriculture technologies. Graphene showed promises also in the biomedical field. Hopeful results have been already obtained in diagnostic, drug delivery, tissue regeneration and photothermal cancer ablation. In view of the enormous development of graphene-based technologies, a careful assessment of its impact on health and environment is demanded. It is evident how investigating the graphene toxicity is of fundamental importance in the context of medical purposes. On the other hand, the nanomaterial present in the environment, likely to be generated all along the industrial life-cycle, may have harmful effects on living organisms. In the present work, an important contribution on the impact of multi-layer graphene (MLG) on health and environment is given by using a multifaceted approach. For the first purpose, the effect of the material on two mammalian cell models was assessed. Key cytotoxicity parameters were considered such as cell viability and inflammatory response induction. This was combined with an evaluation of MLG toxicity towards Xenopus laevis, used as both in vivo and environmental model organism.

  3. Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

    Science.gov (United States)

    Choi, Kyung Hyun; Ali, Junaid; Na, Kyoung-Hoan

    2015-10-01

    This paper describes synthesis of graphene/poly(4-vinylphenol) (PVP) nanocomposite and deposition of thin film by electrohydrodynamic atomization (EHDA) for fabrication flexible resistive switching device. EHDA technique proved its viability for thin film deposition after surface morphology analyses by field emission scanning electron microscope (FESEM) and non-destructive 3D Nano-profilometry, as the deposited films were, devoid of abnormalities. The commercially available graphene micro-flakes were exfoliated and broken down to ultra-small (20 nm-200 nm) nano-flakes by ultra-sonication in presence of N-methyl-pyrrolidone (NMP). These graphene nanoflakes with PVP nanocomposite, were successfully deposited as thin films (thickness ~140±7 nm, Ra=2.59 nm) on indium-tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. Transmittance data revealed that thin films are up to ~87% transparent in visible and NIR region. Resistive switching behaviour of graphene/PVP nanocomposite thin film was studied by using the nanocomposite as active layer in Ag/active layer/ITO sandwich structure. The resistive switching devices thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±3 V, characterized at 10 nA compliance currents. The devices fabricated by this approach exhibited a stable room temperature, low power current-voltage hysteresis and well over 1 h retentivity, and ROFF/RON≈35:1. The device showed stable flexibility up to a minimum bending diameter of 1.8 cm.

  4. Atomic layer deposition in porous structures: 3D photonic crystals

    International Nuclear Information System (INIS)

    This paper reports recent results from studies of atomic layer deposition for the infiltration of three-dimensional photonic crystals. Infiltration of ZnS:Mn and TiO2 are reported for SiO2-based opal templates. It has been demonstrated that high filling fractions can be achieved and that the infiltrated material can be of high crystalline quality as assessed by photoluminescence measurements. The highly conformal and uniform coatings obtained in these studies are shown to contribute significantly to the photonic band gap properties. These investigations show the advantages of atomic layer deposition (ALD) as a flexible and practical pathway for attaining high performance photonic crystal structures and optical microcavities

  5. Carbon nanotube forests growth using catalysts from atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Bingan; Zhang, Can; Esconjauregui, Santiago; Xie, Rongsi; Zhong, Guofang; Robertson, John [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Bhardwaj, Sunil [Istituto Officina dei Materiali-CNR Laboratorio TASC, s.s. 14, km 163.4, I-34012 Trieste (Italy); Sincrotone Trieste S.C.p.A., s.s. 14, km 163.4, I-34149 Trieste (Italy); Cepek, Cinzia [Istituto Officina dei Materiali-CNR Laboratorio TASC, s.s. 14, km 163.4, I-34012 Trieste (Italy)

    2014-04-14

    We have grown carbon nanotubes using Fe and Ni catalyst films deposited by atomic layer deposition. Both metals lead to catalytically active nanoparticles for growing vertically aligned nanotube forests or carbon fibres, depending on the growth conditions and whether the substrate is alumina or silica. The resulting nanotubes have narrow diameter and wall number distributions that are as narrow as those grown from sputtered catalysts. The state of the catalyst is studied by in-situ and ex-situ X-ray photoemission spectroscopy. We demonstrate multi-directional nanotube growth on a porous alumina foam coated with Fe prepared by atomic layer deposition. This deposition technique can be useful for nanotube applications in microelectronics, filter technology, and energy storage.

  6. Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings

    International Nuclear Information System (INIS)

    Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

  7. Wavevector filtering through single-layer and bilayer graphene with magnetic barrier structures

    Science.gov (United States)

    Masir, M. Ramezani; Vasilopoulos, P.; Peeters, F. M.

    2008-12-01

    We show that the angular range of the transmission through magnetic barrier structures can be efficiently controlled in single-layer and bilayer graphenes and this renders the structure's efficient wavevector filters. As the number of magnetic barriers increases, this range shrinks, the gaps in the transmission versus energy become wider, and the conductance oscillates with the Fermi energy.

  8. Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers

    Science.gov (United States)

    Liu, Yanpeng; Yuan, Li; Yang, Ming; Zheng, Yi; Li, Linjun; Gao, Libo; Nerngchamnong, Nisachol; Nai, Chang Tai; Sangeeth, C. S. Suchand; Feng, Yuan Ping; Nijhuis, Christian A.; Loh, Kian Ping

    2014-11-01

    Layer-by-layer-stacked chemical vapour deposition (CVD) graphene films find applications as transparent and conductive electrodes in solar cells, organic light-emitting diodes and touch panels. Common to lamellar-type systems with anisotropic electron delocalization, the plane-to-plane (vertical) conductivity in such systems is several orders lower than its in-plane conductivity. The poor electronic coupling between the planes is due to the presence of transfer process organic residues and trapped air pocket in wrinkles. Here we show the plane-to-plane tunnelling conductivity of stacked CVD graphene layers can be improved significantly by inserting 1-pyrenebutyric acid N-hydroxysuccinimide ester between the graphene layers. The six orders of magnitude increase in plane-to-plane conductivity is due to hole doping, orbital hybridization, planarization and the exclusion of polymer residues. Our results highlight the importance of interfacial modification for enhancing the performance of LBL-stacked CVD graphene films, which should be applicable to other types of stacked two-dimensional films.

  9. Highly efficient hydrogen evolution reaction using crystalline layered three-dimensional molybdenum disulfides grown on graphene film.

    Energy Technology Data Exchange (ETDEWEB)

    Behranginia, Amirhossein; Asadi, Mohammad; Liu, Cong; Yasaei, Poya; Kumar, Bijandra; Phillips, Patrick; Foroozan, Tara; Waranius, Joseph C.; Kim, Kibum; Abiade, Jeremiah; Klie, Robert F.; Curtiss, Larry A.; Salehi-Khojin, Amin

    2016-01-26

    Electrochemistry is central to applications in the field of energy storage and generation. However, it has advanced far more slowly over the last two decades, mainly because of a lack of suitable and affordable catalysts. Here, we report the synthesis of highly crystalline layered three-dimensional (3D) molybdenum disulfide (MoS2) catalysts with bare Mo-edge atoms and demonstrate their remarkable performance for the hydrogen evolution reaction (HER). We found that Mo-edge-terminated 3D MoS2 directly grown on graphene film exhibits a remarkable exchange current density (18.2 mu A cm(-2)) and turnover frequency (>4 S-1) for HER. The obtained exchange current density is 15.2 and 2.3 times higher than that of MoS2/graphene and MoS2/Au catalysts, respectively, both with sulfided Mo-edge atoms. An easily scalable and robust growth process on a wide variety of substrates, along with prolonged stability, suggests that this material is a promising catalyst in energy-related applications.

  10. Catching the bound states in the continuum of a phantom atom in graphene

    Science.gov (United States)

    Guessi, L. H.; Machado, R. S.; Marques, Y.; Ricco, L. S.; Kristinsson, K.; Yoshida, M.; Shelykh, I. A.; de Souza, M.; Seridonio, A. C.

    2015-07-01

    We explore theoretically the formation of bound states in the continuum (BICs) in graphene hosting two collinear adatoms situated at different sides of the sheet and at the center of the hexagonal cell, where a phantom atom of a fictitious lattice emulates the six carbons of the cell. We verify that in this configuration the local density of states near the Dirac points exhibits two characteristic features: (i) a cubic dependence on energy instead of a linear one for graphene as found in New J. Phys. 16, 013045 (2014), 10.1088/1367-2630/16/1/013045, and (ii) the formation of BICs as an aftermath of a Fano destructive interference assisted by the Coulomb correlations in the adatoms. For the geometry where adatoms are collinear to carbon atoms, we report an absence of BICs.

  11. Atomic layer deposited aluminum oxide barrier coatings for packaging materials

    Energy Technology Data Exchange (ETDEWEB)

    Hirvikorpi, Terhi, E-mail: terhi.hirvikorpi@vtt.f [Oy Keskuslaboratorio - Centrallaboratorium Ab (KCL), P.O. Box 70, FI-02151 Espoo (Finland); Vaehae-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.f [Oy Keskuslaboratorio - Centrallaboratorium Ab (KCL), P.O. Box 70, FI-02151 Espoo (Finland); Mustonen, Tuomas, E-mail: tuomas.mustonen@vtt.f [Oy Keskuslaboratorio - Centrallaboratorium Ab (KCL), P.O. Box 70, FI-02151 Espoo (Finland); Iiskola, Eero, E-mail: eero.iiskola@kcl.f [Oy Keskuslaboratorio - Centrallaboratorium Ab (KCL), P.O. Box 70, FI-02151 Espoo (Finland); Karppinen, Maarit, E-mail: maarit.karppinen@tkk.f [Laboratory of Inorganic Chemistry, Department of Chemistry, Helsinki University of Technology, P.O. Box 6100, FI-02015 TKK (Finland)

    2010-03-01

    Thin aluminum oxide coatings have been deposited at a low temperature of 80 {sup o}C on various uncoated papers, polymer-coated papers and boards and plain polymer films using the atomic layer deposition (ALD) technique. The work demonstrates that such ALD-grown Al{sub 2}O{sub 3} coatings efficiently enhance the gas-diffusion barrier performance of the studied porous and non-porous materials towards oxygen, water vapor and aromas.

  12. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    Science.gov (United States)

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-01-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication. PMID:27381715

  13. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene.

    Science.gov (United States)

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-01-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication. PMID:27381715

  14. Controlled surface oxidation of multi-layered graphene anode to increase hole injection efficiency in organic electronic devices

    Science.gov (United States)

    Han, Tae-Hee; Kwon, Sung-Joo; Seo, Hong-Kyu; Lee, Tae-Woo

    2016-03-01

    Ultraviolet ozone (UVO) surface treatment of graphene changes its sp2-hybridized carbons to sp3-bonded carbons, and introduces oxygen-containing components. Oxidized graphene has a finite energy band gap, so UVO modification of the surface of a four-layered graphene anode increases its surface ionization potential up to ∼5.2 eV and improves the hole injection efficiency (η) in organic electronic devices by reducing the energy barrier between the graphene anode and overlying organic layers. By controlling the conditions of the UVO treatment, the electrical properties of the graphene can be tuned to improve η. This controlled surface modification of the graphene will provide a way to achieve efficient and stable flexible displays and solid-state lighting.

  15. Overview of atomic layer etching in the semiconductor industry

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J., E-mail: keren.kanarik@lamresearch.com; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

  16. The role of atomic vacancies and boundary conditions on ballistic thermal transport in graphene nanoribbons

    OpenAIRE

    Scuracchio, P.; Costamagna, S.; Peeters, F. M; Dobry, A.

    2014-01-01

    Quantum thermal transport in armchair and zig-zag graphene nanoribbons are investigated in the presence of single atomic vacancies and subject to different boundary conditions. We start with a full comparison of the phonon polarizations and energy dispersions as given by a fifth-nearest-neighbor force-constant model (5NNFCM) and by elasticity theory of continuum membranes (ETCM). For free-edges ribbons we discuss the behavior of an additional acoustic edge-localized flexural mode, known as fo...

  17. An important atomic process in the CVD growth of graphene: Sinking and up-floating of carbon atom on copper surface

    International Nuclear Information System (INIS)

    By density functional theory (DFT) calculations, the early stages of the growth of graphene on copper (1 1 1) surface are investigated. At the very first time of graphene growth, the carbon atom sinks into subsurface. As more carbon atoms are adsorbed nearby the site, the sunken carbon atom will spontaneously form a dimer with one of the newly adsorbed carbon atoms, and the formed dimer will up-float on the top of the surface. We emphasize the role of the co-operative relaxation of the co-adsorbed carbon atoms in facilitating the sinking and up-floating of carbon atoms. In detail: when two carbon atoms are co-adsorbed, their co-operative relaxation will result in different carbon–copper interactions for the co-adsorbed carbon atoms. This difference facilitates the sinking of a single carbon atom into the subsurface. As a third carbon atom is co-adsorbed nearby, it draws the sunken carbon atom on top of the surface, forming a dimer. Co-operative relaxations of the surface involving all adsorbed carbon atoms and their copper neighbors facilitate these sinking and up-floating processes. This investigation is helpful for the deeper understanding of graphene synthesis and the choosing of optimal carbon sources or process.

  18. Passivation effects of atomic-layer-deposited aluminum oxide

    Directory of Open Access Journals (Sweden)

    Kotipalli R.

    2013-09-01

    Full Text Available Atomic-layer-deposited (ALD aluminum oxide (Al2O3 has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2 in combination with a low density of interface states (Dit. This paper investigates the passivation quality of thin (15 nm Al2O3 films deposited by two different techniques: plasma-enhanced atomic layer deposition (PE-ALD and Thermal atomic layer deposition (T-ALD. Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2 (20 nm, SiO2 (20 nm deposited by plasma-enhanced chemical vapour deposition (PECVD and hydrogenated amorphous silicon nitride (a-SiNx:H (20 nm also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS capacitors were fabricated for Qf and Dit extraction through Capacitance-Voltage-Conductance (C-V-G measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV. The influence of extracted C-V-G parameters (Qf,Dit on the injection dependent lifetime measurements τ(Δn, and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

  19. Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors

    Science.gov (United States)

    Du, Hyewon; Kim, Taekwang; Shin, Somyeong; Kim, Dahye; Kim, Hakseong; Sung, Ji Ho; Lee, Myoung Jae; Seo, David H.; Lee, Sang Wook; Jo, Moon-Ho; Seo, Sunae

    2015-12-01

    We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS2 transistors. Ti-MoS2-graphene heterojunction transistors using both single-layer MoS2 (1M) and 4-layer MoS2 (4M) were fabricated in order to compare graphene electrodes with commonly used Ti electrodes. MoS2-graphene Schottky barrier provided electron injection efficiency up to 130 times higher in the subthreshold regime when compared with MoS2-Ti, which resulted in VDS polarity dependence of device parameters such as threshold voltage (VTH) and subthreshold swing (SS). Comparing single-layer graphene (SG) with bi-layer graphene (BG) in 4M devices, SG electrodes exhibited enhanced device performance with higher on/off ratio and increased field-effect mobility (μFE) due to more sensitive Fermi level shift by gate voltage. Meanwhile, in the strongly accumulated regime, we observed opposing behavior depending on MoS2 thickness for both SG and BG contacts. Differential conductance (σd) of 1M increases with VDS irrespective of VDS polarity, while σd of 4M ceases monotonic growth at positive VDS values transitioning to ohmic-like contact formation. Nevertheless, the low absolute value of σd saturation of the 4M-graphene junction demonstrates that graphene electrode could be unfavorable for high current carrying transistors.

  20. Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistors

    International Nuclear Information System (INIS)

    We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS2 transistors. Ti-MoS2-graphene heterojunction transistors using both single-layer MoS2 (1M) and 4-layer MoS2 (4M) were fabricated in order to compare graphene electrodes with commonly used Ti electrodes. MoS2-graphene Schottky barrier provided electron injection efficiency up to 130 times higher in the subthreshold regime when compared with MoS2-Ti, which resulted in VDS polarity dependence of device parameters such as threshold voltage (VTH) and subthreshold swing (SS). Comparing single-layer graphene (SG) with bi-layer graphene (BG) in 4M devices, SG electrodes exhibited enhanced device performance with higher on/off ratio and increased field-effect mobility (μFE) due to more sensitive Fermi level shift by gate voltage. Meanwhile, in the strongly accumulated regime, we observed opposing behavior depending on MoS2 thickness for both SG and BG contacts. Differential conductance (σd) of 1M increases with VDS irrespective of VDS polarity, while σd of 4M ceases monotonic growth at positive VDS values transitioning to ohmic-like contact formation. Nevertheless, the low absolute value of σd saturation of the 4M-graphene junction demonstrates that graphene electrode could be unfavorable for high current carrying transistors

  1. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

    2014-01-15

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

  2. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    International Nuclear Information System (INIS)

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration

  3. Electrical DNA sequencing by graphene edges functionalized with H or N atoms

    Science.gov (United States)

    Amorim, Rodrigo G.; Scheicheir, Ralph H.

    2014-03-01

    The current technology of DNA sequencing needs to be revolutionized in order to be sufficiently cost-efficient for widespread application in healthcare and genomic research. One of the most promising proposals is to use a solid-state nanodevice based on graphene due to its atomically thin edges which would readily enable single-nucleobase resolution in transverse conductance measurements. We used ab initio calculations based on Density Functional Theory combined with the non-equilibrium Green's function method to study how the capability of a graphene nanogap to electrically sense the four nucleobases (Adenine, Cytosine, Guanine and Thymine) is affected by different passivation (H or N) of the graphene edges. We will show how, for the same nucleobase, the zero bias conductance can be increased by five orders of magnitude when N atoms are chosen for functionalization over H atoms. Other aspects investigated by us concern the translational process of nucleobases through the nanogap and the corresponding spatial resolution due to diminishing transmittance as the nucleobase moves out of the gap.

  4. Van der Waals forces and electron-electron interactions in two strained graphene layers

    OpenAIRE

    Sharma, Anand; Harnish, Peter; Sylvester, Alexander; Kotov, Valeri N.; Neto, A. H. Castro

    2014-01-01

    We evaluate the van der Waals (vdW) interaction energy at zero temperature between two undoped strained graphene layers separated by a finite distance. We consider the following three models for the anisotropic case: (a) where one of the two layers is uniaxially strained, (b) the two layers are strained in the same direction, and (c) one of the layers is strained in the perpendicular direction with respect to the other. We find that for all three models and given value of the electron-electro...

  5. Quantifying the growth of individual graphene layers by in situ environmental transmission electron microscopy

    DEFF Research Database (Denmark)

    Kling, Jens; Hansen, Thomas Willum; Wagner, Jakob Birkedal

    2016-01-01

    The growth dynamics of layered carbon is studied by means of in situ transmission electron microscopy in order to obtain a deeper insight into the growth by chemical vapor deposition, which at present is the technique of choice for growing layered carbon. In situ growth of layered carbon structures...... on nickel using acetylene as carbon precursor gas is studied in the electron microscope at various gas pressures. By following the growth of individual graphene layers on the Ni surface, local growth rates are determined as a function of precursor pressure. Two growth regimes are identified, an...

  6. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto, E-mail: toto@fi.itb.ac.id [Department of physics, physics of electronic materials research division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jl. Ganesha 10, Bandung 40132, Jawa Barat – Indonesia (Indonesia)

    2015-12-29

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

  7. Atomically thin two-dimensional materials as hole extraction layers in organolead halide perovskite photovoltaic cells

    Science.gov (United States)

    Kim, Yu Geun; Kwon, Ki Chang; Le, Quyet Van; Hong, Kootak; Jang, Ho Won; Kim, Soo Young

    2016-07-01

    Atomically thin two-dimensional materials such as MoS2, WS2, and graphene oxide (GO) are used as hole extraction layers (HEL) in organolead halide perovskites solar cells (PSCs) instead of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HEL. MoS2 and WS2 layers with a polycrystalline structure were synthesized by a chemical deposition method using a uniformly spin-coated (NH4)MoS4 and (NH4)WS4 precursor solution. GO was synthesized by the oxidation of natural graphite powder using Hummers' method. The work functions of MoS2, WS2, and GO are measured to be 5.0, 4.95, and 5.1 eV, respectively. The X-ray diffraction spectrum indicated that the synthesized perovskite material is CH3NH3PbI3-xClx. The PSCs with the p-n junction structure were fabricated based on the CH3NH3PbI3-xClx perovskite layer. The power conversion efficiencies of the MoS2, WS2, and GO-based PSCs were 9.53%, 8.02%, and 9.62%, respectively, which are comparable to those obtained from PEDOT:PSS-based devices (9.93%). These results suggest that two-dimensional materials such as MoS2, WS2, and GO can be promising candidates for the formation of HELs in the PSCs.

  8. Interferometric Motion Detection in Atomic Layer 2D Nanostructures: Visualizing Signal Transduction Efficiency and Optimization Pathways

    Science.gov (United States)

    Wang, Zenghui; Feng, Philip X.-L.

    2016-07-01

    Atomic layer crystals are emerging building blocks for enabling new two-dimensional (2D) nanomechanical systems, whose motions can be coupled to other attractive physical properties in such 2D systems. Optical interferometry has been very effective in reading out the infinitesimal motions of these 2D structures and spatially resolving different modes. To quantitatively understand the detection efficiency and its dependence on the device parameters and interferometric conditions, here we present a systematic study of the intrinsic motion responsivity in 2D nanomechanical systems using a Fresnel-law-based model. We find that in monolayer to 14-layer structures, MoS2 offers the highest responsivity among graphene, h-BN, and MoS2 devices and for the three commonly used visible laser wavelengths (633, 532, and 405 nm). We also find that the vacuum gap resulting from the widely used 300 nm-oxide substrate in making 2D devices, fortunately, leads to close-to-optimal responsivity for a wide range of 2D flakes. Our results elucidate and graphically visualize the dependence of motion transduction responsivity upon 2D material type and number of layers, vacuum gap, oxide thickness, and detecting wavelength, thus providing design guidelines for constructing 2D nanomechanical systems with optimal optical motion readout.

  9. Nano-scale strain engineering of graphene and graphene-based devices

    OpenAIRE

    Yeh, N. -C.; Hsu, C.-C.; Teague, M. L.; Wang, J.-Q.; Boyd, D A; Chen, C.-C.

    2015-01-01

    Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here we describe the theoretical foundation fo...

  10. Nanostructure templating using low temperature atomic layer deposition

    Science.gov (United States)

    Grubbs, Robert K.; Bogart, Gregory R.; Rogers, John A.

    2011-12-20

    Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods comprise depositing by atomic layer deposition (ALD) structural layers that are stable at the desired elevated temperatures, onto a template employing a graded temperature deposition scheme. At least one structural layer is deposited at an initial temperature that is less than or equal to the stability temperature of the template, and subsequent depositions made at incrementally increased deposition temperatures until the desired elevated temperature stability is achieved. Nanostructure templates include three dimensional (3D) polymeric templates having features on the order of 100 nm fabricated by proximity field nanopatterning (PnP) methods.

  11. Robust adhesion of flower-like few-layer graphene nanoclusters

    OpenAIRE

    Shibing Tian; Lin Li; Wangning Sun; Xiaoxiang Xia; Dong Han; Junjie Li; Changzhi Gu

    2012-01-01

    Nanostructured surface possessing ultrahigh adhesion like “gecko foot” or “rose petal” can offer more opportunities for bionic application. We grow flower-like few-layer graphene on silicon nanocone arrays to form graphene nanoclusters, showing robust adhesion. Their contact angle (CA) is 164° with a hysteresis CA of 155° and adhesive force for a 5 μL water droplet is about 254 μN that is far larger than present reported results. We bring experimental evidences that this great adhesion depend...

  12. Tunable surface plasmon-polaritons in a gyroelectric slab sandwiched between two graphene layers

    Science.gov (United States)

    Xu, Guoding; Cao, Ming; Liu, Chang; Sun, Jian; Pan, Tao

    2016-05-01

    We study numerically the properties of surface plasmon-polaritons (SPPs) in a gyroelectric slab sandwiched between two graphene layers, where the external static magnetic field is applied in the Voigt geometry. It is shown that the dispersion characteristics and propagation lenghts of the SPPs for both the optical and the acoustic branches can be tuned flexibly by the external magnetic field and graphene's chemical potential, and that the nonreciprocal properties of the SPPs caused by the external magnetic field are rather obvious. The results provide a method for adjusting and improving the dispersion and propagation properties of the SPPs, which might be helpful for the design of the related plasmonic devices.

  13. Conductance of a single-atom carbon chain with graphene leads

    OpenAIRE

    Chen, Wei; Andreev, A. V.; Bertsch, G. F.

    2008-01-01

    We study the conductance of an interconnect between two graphene leads formed by a single-atom carbon chain. Its dependence on the chemical potential and the number of atoms in the chain is qualitatively different from that in the case of normal metal leads. Electron transport proceeds via narrow resonant states in the wire. The latter arise due to strong reflection at the junctions between the chain and the leads, which is caused by the small density of states in the leads at low energy. The...

  14. High-field and thermal transport in 2D atomic layer devices

    Science.gov (United States)

    Serov, Andrey; Dorgan, Vincent E.; Behnam, Ashkan; English, Chris D.; Li, Zuanyi; Islam, Sharnali; Pop, Eric

    2014-06-01

    This paper reviews our recent results of high-field electrical and thermal properties of atomically thin two-dimensional materials. We show how self-heating affects velocity saturation in suspended and supported graphene. We also demonstrate that multi-valley transport must be taken into account to describe high-field transport in MoS2. At the same time we characterized thermal properties of suspended and nanoscale graphene samples over a wide range of temperatures. We uncovered the effects of edge scattering and grain boundaries on thermal transport in graphene, and showed how the thermal conductivity varies between diffusive and ballistic heat flow limits.

  15. Nonstationary structure of atomic and molecular layers in electrothermal. Atomic absorption spectrometry: formation of atomic and molecular absorbing layers of gallium and indium

    International Nuclear Information System (INIS)

    The dynamics of the formation of absorbing layers of gallium and indium atoms and their compounds in a graphite tubular atomizer was investigated by the shadow spectral filming method. These compounds are localozed in the central part of the furnace over the platform and dissapear ay the hotter walls. It the case of gallium and indium atomization, the effects of chemical reactions between the vapor and the walls of the furnace on the formation of absorbing layers are stronger than that of diffusion and convective mass-transfer processes, which are common to all of the elements. Atom propagation from the center to the stomizer ends proceeds through the cascade mechanism because of its relatively low rate of warming up and strong longitudinal anisothermicity

  16. Anode behavior of Sn/WC/graphene triple layered composite for lithium-ion batteries

    International Nuclear Information System (INIS)

    Graphical abstract: A Sn/WC/graphene triple layered composite synthesized via a simple ball-milling approach shows excellent cycling stability and rate capability when used as anode for lithium-ion batteries. Also a (Sn/WC/G)/LiNi0.5Mn1.5O4 full cell exhibits a discharge capacity of 399 mAh (g of Sn/WC/G anode)−1 with superior cyclability, demonstrates full utilization of the anode and an expected energy density value of 530 Wh kg−1, showing a prospect for practical lithium-ion battery applications. -- Abstract: Sn/WC/graphene (Sn/WC/G) triple layered composite in which Sn thin-layer (3–10 nm) enwrapped in-between WC (tungsten carbide) substrate and few-layer graphene is prepared via a simple two-step ball-milling approach. The as prepared triple layered composite exhibits superior cyclability with high capacity and rate capability in lithium-ion half cells, i.e., ca. retains 91% of its initial capacity (400 mAh g−1) after 100 cycles and delivers a high capacity of ∼200 mAh g−1 at a very high rate of 8 C (4000 mA g−1). The improvement in the electrochemical performance can be attributed to the triple layered structure in which the inner WC and outer graphene conductive buffer matrix not only can buffer the volume changes of the Sn thin-layer during cycling, but also ensure good electrical contact of the electro-active particles. Furthermore, a full cell coupled with spinel LiNi0.5Mn1.5O4 cathode in this paper demonstrates full utilization of the Sn anode and an expected energy density value of 530 Wh kg−1, showing a prospect for practical lithium-ion battery applications

  17. Properties of Ultra-Thin Hafnium Oxide and Interfacial Layer Deposited by Atomic Layer Deposition

    Institute of Scientific and Technical Information of China (English)

    Taeho Lee; Young-Bae Kim; Kyung-Il Hong; Duck-Kyun Choi; Jinho Ahn

    2004-01-01

    Ultra-thin hafnium-oxide gate dielectric films deposited by atomic layer deposition technique using HfCl4 and H2O precursor on a hydrogen-terminated Si substrate were investigated. X-ray photoelectron spectroscopy indicates that the interface layer is Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. The Hf-silicate interfacial layer partially changes into SiOx after high temperature annealing, resulting in a complex HfO2-silicate-SiOx dielectric structure. Electrical measurements confirms that HfO2 on Si is stable up to 700 ℃ for 30 s under N2 ambient.

  18. Friction and conductance imaging of sp(2)- and sp(3)-hybridized subdomains on single-layer graphene oxide.

    Science.gov (United States)

    Lee, Hyunsoo; Son, Narae; Jeong, Hu Young; Kim, Tae Gun; Bang, Gyeong Sook; Kim, Jong Yun; Shim, Gi Woong; Goddeti, Kalyan C; Kim, Jong Hun; Kim, Namdong; Shin, Hyun-Joon; Kim, Wondong; Kim, Sehun; Choi, Sung-Yool; Park, Jeong Young

    2016-02-21

    We investigated the subdomain structures of single-layer graphene oxide (GO) by characterizing local friction and conductance using conductive atomic force microscopy. Friction and conductance mapping showed that a single-layer GO flake has subdomains several tens to a few hundreds of nanometers in lateral size. The GO subdomains exhibited low friction (high conductance) in the sp(2)-rich phase and high friction (low conductance) in the sp(3)-rich phase. Current-voltage spectroscopy revealed that the local current flow in single-layer GO depends on the quantity of hydroxyl and carboxyl groups, and epoxy bridges within the 2-dimensional carbon layer. The presence of subdomains with different sp(2)/sp(3) carbon ratios on a GO flake was also confirmed by chemical mapping using scanning transmission X-ray microscopy. These results suggest that spatial mapping of the friction and conductance can be used to rapidly identify the composition of heterogeneous single-layer GO at nanometer scale, which is essential for understanding charge transport in nanoelectronic devices. PMID:26819189

  19. Nanoscale strain engineering of graphene and graphene-based devices

    Institute of Scientific and Technical Information of China (English)

    N-C Yeh; C-C Hsu; M L Teague; J-Q Wang; D A Boyd; C-C Chen

    2016-01-01

    Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simula-tions and nano-fabrication technology.

  20. Nanoscale strain engineering of graphene and graphene-based devices

    Science.gov (United States)

    Yeh, N.-C.; Hsu, C.-C.; Teague, M. L.; Wang, J.-Q.; Boyd, D. A.; Chen, C.-C.

    2016-06-01

    Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.