WorldWideScience

Sample records for athermal silicon microring

  1. A one femtojoule athermal silicon modulator

    CERN Document Server

    Timurdogan, Erman; Sun, Jie; Hosseini, Ehsan Shah; Biberman, Aleksandr; Watts, Michael R

    2013-01-01

    Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength division multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters, and detectors) consume too much power for the femtojouleclass links that will ultimately be required. Here, we propose, demonstrate, and characterize the first modulator to achieve simultaneous high-speed (25-Gb/s), low voltage (0.5VPP) and efficient 1-fJ/bit error-free operation while maintaining athermal operation. Both the low energy and athermal operation were enabled by a record free-carrier accumulation/depletion response obtained in a vertical p-n junction device that at 250-pm/V (30-GHz/V) is up to ten times larger than prior demonstrations. Over a 7.5{\\deg}C temperature range, the massive electro-optic response was used to compensate for thermal drift without increasing energy consumption and over a 10{\\deg}C temperature range, increasing energy consumption by only 2-fJ/bit. The...

  2. Linear signal processing using silicon micro-ring resonators

    DEFF Research Database (Denmark)

    Peucheret, Christophe; Ding, Yunhong; Ou, Haiyan;

    2012-01-01

    We review our recent achievements on the use of silicon micro-ring resonators for linear optical signal processing applications, including modulation format conversion, phase-to-intensity modulation conversion and waveform shaping.......We review our recent achievements on the use of silicon micro-ring resonators for linear optical signal processing applications, including modulation format conversion, phase-to-intensity modulation conversion and waveform shaping....

  3. Controlling carbon nanotube photoluminescence using silicon microring resonators

    OpenAIRE

    Noury, Adrien; Roux, Xavier Le; Vivien, Laurent; Izard, Nicolas

    2015-01-01

    We report on coupling between semiconducting single-wall carbon nanotubes (s-SWNT) photoluminescence and silicon microring resonators. Polyfluorene extracted s-SWNT deposited on such resonators exhibit sharp emission peaks, due to interaction with the cavity modes of the microring resonators. Ring resonators with radius of 5 {\\mu}m and 10 {\\mu}m were used, reaching quality factors up to 4000 in emission. These are among the highest values reported for carbon nanotubes coupled with an integrat...

  4. Controlling carbon nanotube photoluminescence using silicon microring resonators

    CERN Document Server

    Noury, Adrien; Vivien, Laurent; Izard, Nicolas

    2015-01-01

    We report on coupling between semiconducting single-wall carbon nanotubes (s-SWNT) photoluminescence and silicon microring resonators. Polyfluorene extracted s-SWNT deposited on such resonators exhibit sharp emission peaks, due to interaction with the cavity modes of the microring resonators. Ring resonators with radius of 5 {\\mu}m and 10 {\\mu}m were used, reaching quality factors up to 4000 in emission. These are among the highest values reported for carbon nanotubes coupled with an integrated cavity on silicon platform, which open up the possibility to build s-SWNT based efficient light source on silicon.

  5. Widely tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi;

    2010-01-01

    We propose and demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator microring resonators. The phase-shifting range and the RF-power variation are analyzed. A maximum phase-shifting range of 0~600° is achieved by utilizing a dual-microring resonator...

  6. All-optical 10 Gb/s AND logic gate in a silicon microring resonator

    DEFF Research Database (Denmark)

    Xiong, Meng; Lei, Lei; Ding, Yunhong;

    2013-01-01

    An all-optical AND logic gate in a single silicon microring resonator is experimentally demonstrated at 10 Gb/s with 50% RZ-OOK signals. By setting the wavelengths of two intensity-modulated input pumps on the resonances of the microring resonator, field-enhanced four-wave mixing with a total input...

  7. Picosecond all-optical switching in hydrogenated amorphous silicon microring resonators

    CERN Document Server

    Pelc, Jason S; Vo, Sonny; Santori, Charles; Fattal, David A; Beausoleil, Raymond G

    2014-01-01

    We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microring. In comparison with telecom-band optical switching in crystalline silicon microrings, a-Si:H exhibits substantially higher switching speeds due to reduced impact of free-carrier processes.

  8. Microwave photonic phase shifter based on tunable silicon-on-insulator microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi;

    2010-01-01

    We demonstrate a microwave photonic phase shifter based on an electrically tunable silicon-on-insulator microring resonator. A continuously tunable phase shift of up to 315° at a microwave frequency of 15GHz is obtained.......We demonstrate a microwave photonic phase shifter based on an electrically tunable silicon-on-insulator microring resonator. A continuously tunable phase shift of up to 315° at a microwave frequency of 15GHz is obtained....

  9. Simulation of 60-GHz microwave photonic filters based on serially coupled silicon microring resonators

    Institute of Scientific and Technical Information of China (English)

    Dengke Zhang; Xue Feng; Yidong Huang

    2012-01-01

    The microwave photonic filters (MPFs) based on serially coupled silicon microring resonators (MRRs) are theoretically analyzed for the application of 60-GHz millimeter wave wireless personal area networks.This is achieved by calculating the improvement of bit error ratio (BER).According to the simulation results,the requirement of signal-to-noise ratio (SNR) of the received data can be reduced by 14 dB for the same BER with and without MPFs.The performance of the MPF with five serially coupled microring structures is better than that of the MPF with a single microring,owing to the improvement of the shape factor.%The microwave photonic filters (MPFs) based on serially coupled silicon microring resonators (MRRs) are theoretically analyzed for the application of 60-GHz millimeter wave wireless personal area networks. This is achieved by calculating the improvement of bit error ratio (BER). According to the simulation results, the requirement of signal-to-noise ratio (SNR) of the received data can be reduced by 14 dB for the same BER with and without MPFs. The performance of the MPF with five serially coupled microring structures is better than that of the MPF with a single microring, owing to the improvement of the shape factor.

  10. Self-referenced silicon nitride array microring biosensor for toxin detection using glycans at visible wavelength

    Science.gov (United States)

    Ghasemi, Farshid; Eftekhar, Ali A.; Gottfried, David S.; Song, Xuezheng; Cummings, Richard D.; Adibi, Ali

    2013-02-01

    We report on application of on-chip referencing to improve the limit-of-detection (LOD) in compact silicon nitride (SiN) microring arrays. Microring resonators, fabricated by e-beam lithography and fluorine-based etching, are designed for visible wavelengths (656nm) and have a footprint of 20 x 20 μm. GM1 ganglioside is used as the specific ligand for recognition of Cholera Toxin Subunit B (CTB), with Ricinus Communis Agglutinin I (RCA I) as a negative control. Using micro-cantilever based printing less than 10 pL of glycan solution is consumed per microring. Real-time data on analyte binding is extracted from the shifts in resonance wavelengths of the microrings.

  11. Linear all-optical signal processing using silicon micro-ring resonators

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing;

    2016-01-01

    Silicon micro-ring resonators (MRRs) are compact and versatile devices whose periodic frequency response can be exploited for a wide range of applications. In this paper, we review our recent work on linear all-optical signal processing applications using silicon MRRs as passive filters. We focus...

  12. 360° tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Xue, Weiqi; Liu, Liu;

    2010-01-01

    We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained......We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained...

  13. Illuminating the future of silicon photonics: optical coupling of carbon nanotubes to microrings

    International Nuclear Information System (INIS)

    Advances in carbon nanotube material quality and processing techniques have led to an increased interest in nanotube photonics. In particular, emission in the telecommunication wavelengths makes nanotubes compatible with silicon photonics. Noury et al (2014 Nanotechnology 25 215201) have reported on carbon nanotube photoluminescence coupled to silicon microring resonators, underscoring the advantage of combining carbon nanotube emitters with silicon photonics. Their results open up the possibility of using nanotubes in other waveguide-based devices, taking advantage of well-established technologies. (viewpoint)

  14. Tunable microwave phase shifter based on silicon-on-insulator microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi;

    2010-01-01

    We demonstrate microwave phase shifters based on electrically tunable silicon-on-insulator microring resonators (MRRs). MRRs with different quality factors are fabricated and tested. A continuously tunable phase shift of up to 336 at a microwave frequency of 40 GHz is obtained using a high...

  15. Silicon photonic micro-ring resonators to sense strain and ultrasound

    NARCIS (Netherlands)

    Westerveld, W.J.

    2014-01-01

    We demonstrated that photonic micro-ring resonators can be used in micro-machined ultrasound microphones. This might cause a breakthrough in array transducers for ultrasonography; first because optical multiplexing allows array interrogation via one optical fiber and second because the silicon-on-in

  16. RZ-to-NRZ format conversion at 50 Gbit/s based on a silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Pu, Minhao;

    2010-01-01

    We demonstrate RZ-to-NRZ format conversion at 50 Gbit/s based on silicon microring resonator with FSR of 100 GHz. Bit error rate measurements show a low power penalty compared to electrical NRZ signal for error free operation.......We demonstrate RZ-to-NRZ format conversion at 50 Gbit/s based on silicon microring resonator with FSR of 100 GHz. Bit error rate measurements show a low power penalty compared to electrical NRZ signal for error free operation....

  17. Discrete Frequency Entangled Photon Pair Generation Based on Silicon Micro-ring Cavities

    Science.gov (United States)

    Suo, Jing; Zhang, Wei; Dong, Shuai; Huang, Yidong; Peng, Jiangde

    2016-10-01

    In this paper, we propose and demonstrate a scheme to generate discrete frequency entangled photon pairs based on a silicon micro-ring resonator. The resonator is placed in a Sagnac fiber loop. Stimulated by two pump lights at two different resonance wavelengths of the resonator, photon pairs at another two resonance wavelengths are generated along two opposite directions in the fiber loop, by the nondegenerate spontaneous four wave mixing in the resonator. Their states are superposed and interfered at the output ports of the fiber loop to generate frequency entangled photon pairs. On the other hand, since the pump lights come from two continuous wave lasers, energy-time entanglement is an intrinsic property of the generated photon pairs. The entanglements on frequency and energy-time are demonstrated experimentally by the experiments of spatial quantum beating and Franson-type interference, respectively, showing that the silicon micro-ring resonators are ideal candidates to realize complex photonic quantum state generation.

  18. Photon pair generation from compact silicon microring resonators using microwatt-level pump powers

    CERN Document Server

    Savanier, Marc; Mookherjea, Shayan

    2015-01-01

    Microring resonators made from silicon, using deep ultraviolet lithography fabrication processes which are scalable and cost-effective, are becoming a popular microscale device format for generating photon pairs at telecommunications wavelengths at room temperature. In compact devices with a footprint less than $5\\times 10^{-4}$ mm$^2$, we demonstrate pair generation using only a few microwatts of average pump power. We discuss the role played by important parameters such as the loss, group-velocity dispersion and the ring-waveguide coupling coefficient in finding the optimum operating point for silicon microring pair generation. Such small devices and low pump power requirements could be beneficial for future scaled-up architectures with many pair-generation devices on the same chip, which will be required to create quasi-deterministic pure single photon sources from inherently statistical processes such as spontaneous four-wave mixing.

  19. Large-scale-integrated silicon photonics using microdisk and microring resonators

    Science.gov (United States)

    Poon, Andrew W.; Feng, Shaoqi; Cai, Hong; Luo, Xianshu; Chen, Hui

    2010-02-01

    We review our recent work on silicon photonic devices for on-chip optical interconnects and optofluidics. On the optical interconnects front, we demonstrate coupled-resonator optical waveguides with gapless inter-cavity coupling for on-chip wide-bandwidth high-order optical channel filters and optical delay lines. We propose a 5×5 matrix switch comprising two-dimensionally cascaded microring resonator-based electrooptic switches for network-on-chip applications and demonstrate a 2×2 matrix switch as a proof-of-concept. We demonstrate cavity-enhanced photocurrent generation in a p-i-n diode embedded microring resonator for wavelength-selective photodetection and monitoring on-chip optical networks. We also investigate a serial-cascaded double-microring-based silicon photonic circuit for high-speed on-chip clock-recovery applications. On the optofluidics front, we study silicon nitride based waveguides with integrated microfluidic channels for optical manipulation of microparticles.

  20. Ultra-high peak rejection notch microwave photonic filter using a single silicon microring resonator.

    Science.gov (United States)

    Long, Yun; Wang, Jian

    2015-07-13

    We propose a simple scheme to realize ultra-high peak rejection notch microwave photonic filter (MPF) based on a single silicon microring resonator (MRR). Using the combination of a conventional phase modulator (PM), a tunable bandpass filter (TBF), and a silicon MRR to manipulate the phase and amplitude of optical sidebands resulting in a signal cancellation at the RF notch filter frequency, we experimentally demonstrate a notch MPF with an ultra-high peak rejection beyond 60 dB. The frequency tunability of the proposed ultra-high peak rejection MPF is also demonstrated in the experiment. PMID:26191836

  1. Design and optimization of optical modulators based on graphene-on-silicon nitride microring resonators

    CERN Document Server

    Wu, Zeru; Zhang, Tianyou; Shao, Zengkai; Wen, Yuanhui; Xu, Pengfei; Zhang, Yanfeng; Yu, Siyuan

    2016-01-01

    In order to overcome the challenge of obtaining high modulation depth due to weak graphene-light interaction, a graphene-on-silicon nitride (SiNx) microring resonator based on graphene's gate-tunable optical conductivity is proposed and studied. Geometrical parameters of graphene-on-SiNx waveguide are systematically analyzed and optimized, yielding a loss tunability of 0.04 dB/{\\mu}m and an effective index variation of 0.0022. We explicitly study the interaction between graphene and a 40-{\\mu}m-radius microring resonator, where electro-absorptive and electro-refractive modulation are both taken into account. By choosing appropriate graphene coverage and coupling coefficient, a high modulation depth of over 40 dB with large fabrication tolerance is obtained.

  2. Athermal biosensor based on three waveguide micro-ring resonators%三环型波导微环谐振器无热化生物传感器

    Institute of Scientific and Technical Information of China (English)

    崔乃迪; 寇婕婷; 梁静秋; 王惟彪; 郭进; 冯俊波; 滕婕; 曹国威

    2014-01-01

    针对温度波动对生物传感器探测性能的影响,本文提出了一种三环型波导微环谐振器无热化生物传感器。传感器芯片以3个微环谐振器为一个传感单元,3个微环谐振器并联排列,且分别工作在1500、1550和1580 nm波长,以其中两个为基本探测微环,另外一个作为备用微环。由于3个微环工作波长不同,可通过运算消去温度对探测谱线变化值的影响项,从而实现传感器的无热化探测。相对于传统的无热化方案,本方案制备材料不受限,且无需参考微环,不存在浪费面积,集成度更高。另外备用微环的设计可以防止部分微环工作失常时传感器无法工作情况的发生,提高了系统的稳定性及可靠性。%Considering the influence of the temperature fluctuation on the detection performance of the biosen -sor , the athermal biosensor based on three waveguide micro-ring resonators is proposed in this paper .The res-onant wavelengths of the three parallel rings are 1 500 nm, 1 550 nm and 1 580 nm respectively .Two of the rings are utilized as the sensing resonator , and the other one is used as the alternate resonator .Because the resonant wavelengths of the three rings are different , the temperature influence term can be eliminated through computation , and as a result , the athermal bio-sensing is realized .Compared to the existing method , the scheme we proposed shows the following advantages:the unlimited use of the fabricated material , a higher inte-gration level and a higher stability due to the introduction of the standby micro-rings which can avoid the case that the biosensor can not work when partial micro-rings work under a disorder .

  3. Demonstration of a 3-bit optical digital-to-analog converter based on silicon microring resonators.

    Science.gov (United States)

    Yang, Lin; Ding, Jianfeng; Chen, Qiaoshan; Zhou, Ping; Zhang, Fanfan; Zhang, Lei

    2014-10-01

    We propose an N-bit optical digital-to-analog converter based on silicon microring resonators (MRRs), which can transform an N-bit electrical digital signal to an optical analog signal. A 3-bit optical digital-to-analog convertor is fabricated as proof of concept through a CMOS-compatible process on a silicon-on-insulator platform. The silicon MRRs are modulated through the electric-field-induced carrier injection in forward biased PN junctions embedded in the ring waveguides. The electro-optical 3-dB bandwidths of the silicon MRRs are approximately 800 MHz. The device works well at a speed of 500  MSample/s under driving voltage swings of 0.75 V. PMID:25360972

  4. Selective and reversible ammonia gas detection with nanoporous film functionalized silicon photonic micro-ring resonator.

    Science.gov (United States)

    Yebo, Nebiyu A; Sree, Sreeprasanth Pulinthanathu; Levrau, Elisabeth; Detavernier, Christophe; Hens, Zeger; Martens, Johan A; Baets, Roel

    2012-05-21

    Portable, low cost and real-time gas sensors have a considerable potential in various biomedical and industrial applications. For such applications, nano-photonic gas sensors based on standard silicon fabrication technology offer attractive opportunities. Deposition of high surface area nano-porous coatings on silicon photonic sensors is a means to achieve selective, highly sensitive and multiplexed gas detection on an optical chip. Here we demonstrate selective and reversible ammonia gas detection with functionalized silicon-on-insulator optical micro-ring resonators. The micro-ring resonators are coated with acidic nano-porous aluminosilicate films for specific ammonia sensing, which results in a reversible response to NH(3)with selectivity relative to CO(2). The ammonia detection limit is estimated at about 5 ppm. The detectors reach a steady response to NH(3) within 30 and return to their base level within 60 to 90 seconds. The work opens perspectives on development of nano-photonic sensors for real-time, non-invasive, low cost and light weight biomedical and industrial sensing applications.

  5. First demonstration of long-haul transmission using silicon microring modulators.

    Science.gov (United States)

    Biberman, Aleksandr; Manipatruni, Sasikanth; Ophir, Noam; Chen, Long; Lipson, Michal; Bergman, Keren

    2010-07-19

    We report error-free long-haul transmission of optical data modulated using a silicon microring resonator electro-optic modulator with modulation rates up to 12.5 Gb/s. Using bit-error-rate and power penalty characterizations, we evaluate the performance of this device with varying modulation rates, and perform a comparative analysis using a commercial electro-optic modulator. We then experimentally measure the signal integrity degradation of the high-speed optical data with increasing propagation distances, induced chromatic dispersions, and bandwidth-distance products, showing error-free transmission for propagation distances up to 80 km. These results confirm the functional ubiquity of this silicon modulator, establishing the potential role of silicon photonic interconnects for chip-scale high-performance computing systems and memory access networks, optically-interconnected data centers, as well as high-performance telecommunication networks spanning large distances. PMID:20720934

  6. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Energy Technology Data Exchange (ETDEWEB)

    Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2015-09-28

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  7. Multi-Channel 40 Gbit/s NRZ-DPSK demodulation using a single silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Xu, Jing; Peucheret, Christophe;

    2010-01-01

    We demonstrate simultaneous demodulation of multiple 40 Gbit/s WDM NRZ-DPSK channels using a single silicon microring resonator with FSR of 100 GHz. Bit error measurements show very good performances for both through and drop demodulations for all channels...

  8. Tunable complex-valued multi-tap microwave photonic filter based on single silicon-oninsulator microring resonator

    DEFF Research Database (Denmark)

    Lloret, Juan; Sancho, Juan; Pu, Minhao;

    2011-01-01

    A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonator is presented. The degree of tunability of the approach involving two, three and four taps is theoretical and experimentally characterized, respectively. The constraints...... of exploiting the optical phase transfer function of a microring resonator aiming at implementing complex-valued multi-tap filtering schemes are also reported. The trade-off between the degree of tunability without changing the free spectral range and the number of taps is studied in-depth. Different window...

  9. Adaptive gain, equalization, and wavelength stabilization techniques for silicon photonic microring resonator-based optical receivers

    Science.gov (United States)

    Palermo, Samuel; Chiang, Patrick; Yu, Kunzhi; Bai, Rui; Li, Cheng; Chen, Chin-Hui; Fiorentino, Marco; Beausoleil, Ray; Li, Hao; Shafik, Ayman; Titriku, Alex

    2016-03-01

    Interconnect architectures based on high-Q silicon photonic microring resonator devices offer a promising solution to address the dramatic increase in datacenter I/O bandwidth demands due to their ability to realize wavelength-division multiplexing (WDM) in a compact and energy efficient manner. However, challenges exist in realizing efficient receivers for these systems due to varying per-channel link budgets, sensitivity requirements, and ring resonance wavelength shifts. This paper reports on adaptive optical receiver design techniques which address these issues and have been demonstrated in two hybrid-integrated prototypes based on microring drop filters and waveguide photodetectors implemented in a 130nm SOI process and high-speed optical front-ends designed in 65nm CMOS. A 10Gb/s powerscalable architecture employs supply voltage scaling of a three inverter-stage transimpedance amplifier (TIA) that is adapted with an eye-monitor control loop to yield the necessary sensitivity for a given channel. As reduction of TIA input-referred noise is more critical at higher data rates, a 25Gb/s design utilizes a large input-stage feedback resistor TIA cascaded with a continuous-time linear equalizer (CTLE) that compensates for the increased input pole. When tested with a waveguide Ge PD with 0.45A/W responsivity, this topology achieves 25Gb/s operation with -8.2dBm sensitivity at a BER=10-12. In order to address microring drop filters sensitivity to fabrication tolerances and thermal variations, efficient wavelength-stabilization control loops are necessary. A peak-power-based monitoring loop which locks the drop filter to the input wavelength, while achieving compatibility with the high-speed TIA offset-correction feedback loop is implemented with a 0.7nm tuning range at 43μW/GHz efficiency.

  10. Development of silicon photonic microring resonator biosensors for multiplexed cytokine assays and in vitro diagnostics

    Science.gov (United States)

    Luchansky, Matthew Sam

    In order to guide critical care therapies that are personalized to a patient's unique disease state, a diagnostic or theranostic medical device must quickly provide a detailed biomolecular understanding of disease onset and progression. This detailed molecular understanding of cellular processes and pathways requires the ability to measure multiple analytes in parallel. Though many traditional sensing technologies for biomarker analysis and fundamental biological studies (i.e. enzyme-linked immunosorbent assays, real-time polymerase chain reaction, etc.) rely on single-parameter measurements, it has become increasingly clear that the inherent complexity of many human illnesses and pathways necessitates quantitative and multiparameter analysis of biological samples. Currently used analytical methods are deficient in that they often provide either highly quantitative data for a single biomarker or qualitative data for many targets, but methods that simultaneously provide highly quantitative analysis of many targets have yet to be adequately developed. Fields such as medical diagnostics and cellular biology would benefit greatly from a technology that enables rapid, quantitative and reproducible assays for many targets within a single sample. In an effort to fill this unmet need, this doctoral dissertation describes the development of a clinically translational biosensing technology based on silicon photonics and developed in the chemistry research laboratory of Ryan C. Bailey. Silicon photonic microring resonators, a class of high-Q optical sensors, represent a promising platform for rapid, multiparameter in vitro measurements. The original device design utilizes 32-ring arrays for real-time biomolecular sensing without fluorescent labels, and these optical biosensors display great potential for more highly multiplexed (100s-1000s) measurements based on the impressive scalability of silicon device fabrication. Though this technology can be used to detect a variety of

  11. Compact continuously tunable microwave photonic filters based on cascaded silicon microring resonators

    Science.gov (United States)

    Liu, Li; He, Mengying; Dong, Jianji

    2016-03-01

    We propose and experimentally demonstrate a photonic approach to achieving tunable bandpass microwave photonic filters (MPFs) based on cascaded microring resonators (CMRRs). The optical spectrum of the silicon CMRRs could offer two bandpass response to separately filter the optical carrier and one of the sidebands generated by the phase modulation. Thus we could achieve a bandpass MPF. Moreover, as the central frequencies and bandwidths of the two bandpass response can be tuned by adjusting the laser wavelength and voltages applied on one MRR, the central operating frequency or 3-dB bandwidth of the MPF can be continuously tuned in wide ranges respectively. A proof-of-concept experiment illustrates a central frequency tuning range from 19 GHz to 40 GHz, and a wide bandwidth tuning range from 5.5 GHz to 17.5 GHz.

  12. All-optical tuning of a nonlinear silicon microring assisted microwave photonic filter: theory and experiment.

    Science.gov (United States)

    Long, Yun; Wang, Jian

    2015-07-13

    We propose and demonstrate an all-optical tuning mechanism to tune the response of a microwave photonic filter (MPF) based on a nonlinear silicon microring resonator (MRR). The tuning mechanism relies on the optical nonlinearities induced resonant wavelength shift in the silicon MRR, leading to the change of frequency difference between the optical carrier frequency and resonant frequency of the silicon MRR. A detailed theoretical model is established to describe the operation of the proposed all-optical tunable MPF. Two cases are studied in the experiment, i.e. the optical carrier frequency is located at the left or right side of the MRR resonant frequency. Both forward and backward pumping configurations in each case are demonstrated. Using the fabricated silicon MRR and exploiting light to control light, the central frequency of the notch MPF can be flexibly tuned by adjusting the pump light power. Moreover, the presented all-optical tuning mechanism might also facilitate interesting applications such as microwave switching and microwave modulation. PMID:26191838

  13. Generation of hyper-entanglement on polarization and energy-time based on a silicon micro-ring cavity.

    Science.gov (United States)

    Suo, Jing; Dong, Shuai; Zhang, Wei; Huang, Yidong; Peng, Jiangde

    2015-02-23

    In this paper, hyper-entanglement on polarization and energy-time is generated based on a silicon micro-ring cavity. The silicon micro-ring cavity is placed in a fiber loop connected by a polarization beam splitter. Photon pairs are generated by the spontaneous four wave mixing (SFWM) in the cavity bi-directionally. The two photon states of photon pairs propagate along the two directions of the fiber loop and are superposed in the polarization beam splitter with orthogonal polarizations, leading to the polarization entanglement generation. On the other hand, the energy-time entanglement is an intrinsic property of photon pairs generated by the SFWM, which maintains in the process of the state superposition. The property of polarization entanglement is demonstrated by the two photon interferences under two non-orthogonal polarization bases. The property of energy-time entanglement is demonstrated by the Franson type interference under two non-orthogonal phase bases. The raw visibilities of all the measured interference fringes are higher than 1/2, the bench mark for violation of the Bell inequality. It indicates that silicon micro-ring cavity is a promising candidate to realize high performance hyper-entanglement generation.

  14. Non-blocking four-port optical router based on thermooptic silicon microrings

    Science.gov (United States)

    Dang, Pei-pei; Li, Cui-ting; Zheng, Wen-xue; Zheng, Chuan-tao; Wang, Yi-ding

    2016-07-01

    By using silicon-on-insulator (SOI) platform, 12 channel waveguides, and four parallel-coupling one-microring resonator routing elements, a non-blocking four-port optical router is proposed. Structure design and optimization are performed on the routing elements at 1 550 nm. At drop state with a power consumption of 0 mW, the insertion loss of the drop port is less than 1.12 dB, and the crosstalk between the two output ports is less than -28 dB; at through state with a power consumption of 22 mW, the insertion loss of the through port is less than 0.45 dB, and the crosstalk between the two output ports is below -21 dB. Routing topology and function are demonstrated for the four-port optical router. The router can work at nine non-blocking routing states using the thermo-optic (TO) effect of silicon for tuning the resonance of each switching element. Detailed characterizations are presented, including output spectrum, insertion loss, and crosstalk. According to the analysis on all the data links of the router, the insertion loss is within the range of 0.13—3.36 dB, and the crosstalk is less than -19.46 dB. The router can meet the need of large-scale optical network-on-chip (ONoC).

  15. A secure WDM ring access network employing silicon micro-ring based remote node

    Science.gov (United States)

    Sung, Jiun-Yu; Chow, Chi-Wai; Yeh, Chien-Hung; Xu, Ke; Hsu, Chin-Wei; Su, Hong-Quan; Tsang, Hon-Ki

    2014-08-01

    A secure and scalable wavelength-division-multiplexing (WDM) ring-based access network is proposed and demonstrated using proof-of-concept experiments. In the remote node (RN), wavelength hopping for specific optical networking unit (ONU) is deployed by using silicon micro-ring resonators (SMR). Using silicon-based devices could be cost-effective for the cost-sensitive access network. Hence the optical physical layer security is introduced. The issues of denial of service (DOS) attacks, eavesdropping and masquerading can be made more difficult in the proposed WDM ring-based access network. Besides, the SMRs with different dropped wavelengths can be cascaded, such that the signals pass through the preceding SMRs can be dropped by a succeeding SMR. This can increase the scalability of the RN for supporting more ONUs for future upgrade. Here, error-free 10 Gb/s downlink and 1.25 Gb/s uplink transmission are demonstrated to show the feasibility of the proposed network.

  16. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    Science.gov (United States)

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  17. Tunable complex-valued multi-tap microwave photonic filter based on single silicon-on-insulator microring resonator.

    Science.gov (United States)

    Lloret, Juan; Sancho, Juan; Pu, Minhao; Gasulla, Ivana; Yvind, Kresten; Sales, Salvador; Capmany, José

    2011-06-20

    A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonator is presented. The degree of tunability of the approach involving two, three and four taps is theoretical and experimentally characterized, respectively. The constraints of exploiting the optical phase transfer function of a microring resonator aiming at implementing complex-valued multi-tap filtering schemes are also reported. The trade-off between the degree of tunability without changing the free spectral range and the number of taps is studied in-depth. Different window based scenarios are evaluated for improving the filter performance in terms of the side-lobe level. PMID:21716478

  18. Thermo-optically driven silicon microring-resonator-loaded Mach-Zehnder modulator for low-power consumption and multiple-wavelength modulation

    Science.gov (United States)

    Gautam, Rajdeep; Kaneshige, Hiroki; Yamada, Hitoshi; Katouf, Redouane; Arakawa, Taro; Kokubun, Yasuo

    2014-02-01

    Low-power-consumption thermo-optically controlled silicon-microring-resonator loaded Mach-Zehnder modulators (MRR-loaded MZMs) are demonstrated. We experimentally characterized a single microring and cascaded-multiple-microring resonators coupled to one arm of a Mach-Zehnder interferometer (MZI). The driving power consumption of the proposed MZM is significantly reduced owing to the enhanced phase shift in the MRR. The device was fabricated on a silicon-on-insulator (SOI) waveguide structure, and each microring is equipped with TiN microheater for thermo-optic tuning. The coupling efficiency between the microring and a busline waveguide was regulated by varying the gap between two waveguides at a directional coupler. The power consumption of single microring and cascaded MRR-loaded MZMs was approximately 0.4 and 1 mW, respectively. The phase-shift enhancement factor of up to 19 with a maximum extinction ratio of 18 dB was obtained experimentally. Multiple-wavelength operation was also demonstrated in the cascaded MRR-loaded MZM.

  19. Wavelength tuning and stabilization of microring-based filters using silicon in-resonator photoconductive heaters

    CERN Document Server

    Jayatilleka, Hasitha; Guillen-Torres, Miguel Angel; Caverley, Michael; Hu, Ricky; Jaeger, Nicolas A F; Chrostowski, Lukas; Shekhar, Sudip

    2015-01-01

    We demonstrate that n-doped resistive heaters in silicon waveguides show photoconductive effects having responsivities as high as 271 mA/W. These photoconductive heaters, integrated into microring resonator (MRR)-based filters, were used to automatically tune and stabilize the filter's resonance wavelength to the input laser's wavelength. This is achieved without requiring dedicated defect implantations, additional material depositions, dedicated photodetectors, or optical power tap-outs. Automatic wavelength stabilization of first-order MRR and second-order series-coupled MRR filters is experimentally demonstrated. Open eye diagrams were obtained for data transmission at 12.5 Gb/s while the temperature was varied by 5 C at a rate of 0.28 C/s. We theoretically show that series-coupled MRR-based filters of any order can be automatically tuned by using photoconductive heaters to monitor the light intensity in each MRR, and sequentially aligning the resonance of each MRR to the laser's wavelength.

  20. Design of a polymer-filled silicon nitride strip/slot asymmetric hybrid waveguide for realizing both flat dispersion and athermal operation.

    Science.gov (United States)

    Bian, Dandan; Chen, Shaowu; Lei, Xun; Qin, Guanshi; Chen, Zhanguo

    2016-06-20

    An asymmetric strip/slot hybrid silicon nitride waveguide is designed to simultaneously realize athermal operation and flat dispersion. The slot filling and upper cladding materials are negative thermal-optical coefficient (TOC), low refractive index polyurethane acrylate, while the left and right cladding layers are positive TOC, high refractive index silicon nitride. With suitable waveguide parameter selection, an optimum strip/slot hybrid silicon nitride waveguide exhibits an effective TOC of 1.263×10-7/K at 1550 nm, flattened dispersion in the wavelength range from 1200 to 1800 nm with the maximum dispersion of 30.51 ps/(nm·km), and a minimum of 10.89 ps/(nm·km). The proposed hybrid waveguide has great potential in building up broadband athermal microresonator optical frequency combs.

  1. Tunable complex-valued multi-tap microwave photonic filter based on single silicon-oninsulator microring resonator

    OpenAIRE

    Lloret J.; Sancho J.; Pu M.; Gasulla I.; YvindSalvador K.; Capmany S.

    2011-01-01

    This paper was published in OPTICS EXPRESS and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://dx.doi.org/10.1364/OE.19.012402. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonato...

  2. Simultaneous RZ-OOK to NRZ-OOK and RZ-DPSK to NRZ-DPSK format conversion in a silicon microring resonator

    DEFF Research Database (Denmark)

    Xiong, Meng; Ozolins, Oskars; Ding, Yunhong;

    2012-01-01

    Simultaneous RZ-OOK to NRZ-OOK and RZ-DPSK to NRZDPSK modulation format conversion in a single silicon microring resonator with free spectral range equal to twice the signal bit rate is experimentally demonstrated for the first time at 41.6 Gb/s. By utilizing an optimized custom-made microring...... resonator with high coupling coefficient followed by an optical bandpass filter with appropriate bandwidth, good conversion performances for both modulation formats are achieved according to the converted signals eye diagrams and bit-error-rate measurements....

  3. Multi-channel WDM RZ-to-NRZ format conversion at 50 Gbit/s based on single silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Pu, Minhao;

    2010-01-01

    range of 100 GHz and Q value of 7900 is designed and fabricated for this purpose. Multi-channel RZ-to-NRZ format conversion is demonstrated experimentally at 50 Gbit/s for WDM channels with 200 GHz channel spacing using the fabricated device. Bit error rate (BER)measurements show very good conversion......We comprehensively analyze multiple WDM channels RZ-to- NRZ format conversion using a single microring resonator. The scheme relies on simultaneous suppression of the first order harmonic components in the spectra of all the RZ channels. An optimized silicon microring resonator with free spectral...

  4. Quantum Dot Laser for a Light Source of an Athermal Silicon Optical Interposer

    Directory of Open Access Journals (Sweden)

    Nobuaki Hatori

    2015-04-01

    Full Text Available This paper reports a hybrid integrated light source fabricated on a silicon platform using a 1.3 μm wavelength quantum dot array laser. Temperature insensitive characteristics up to 120 °C were achieved by the optimum quantum dot structure and laser structure. Light output power was obtained that was high enough to achieve an optical error-free link of a silicon optical interposer. Furthermore, we investigated a novel spot size convertor in a silicon waveguide suitable for a quantum dot laser for lower energy cost operation of the optical interposer.

  5. Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

    CERN Document Server

    Savanier, Marc

    2016-01-01

    Generation of photon pairs from compact, manufacturable and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity (JSI), which describes the frequency correlations of the photon pair. In particular, heralded single-photon generation requires uncorrelated photons, rather than the highly anti-correlated photons conventionally obtained under continuous-wave (CW) pumping. Recent attempts to achieve such a factorizable JSI have used short optical pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared to the Si microchip pair generator, dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from a Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a CW optical diode ...

  6. Sub-bandgap linear-absorption-based photodetectors in avalanche mode in PN-diode-integrated silicon microring resonators.

    Science.gov (United States)

    Li, Yu; Feng, Shaoqi; Zhang, Yu; Poon, Andrew W

    2013-12-01

    We report a sub-bandgap linear-absorption-based photodetector in avalanche mode at 1550 nm in a PN-diode-integrated silicon microring resonator. The photocurrent is primarily generated by the defect-state absorption introduced by the boron and phosphorous ion implantation during the PN diode formation. The responsivity is enhanced by both the cavity effect and the avalanche multiplication. We measure a responsivity of ~72.8 mA/W upon 8 V at cavity resonances in avalanche mode, corresponding to a gain of ~72 relative to the responsivity of ~1.0 mA/W upon 3 V at cavity resonances in normal mode. Our device exhibits a 3 dB bandwidth of ~7 GHz and an open eye diagram at 15 Gbit/s upon 8 V.

  7. The influence of thermal and free carrier dispersion effects on all-optical wavelength conversion in a silicon racetrack-shaped microring resonator

    Science.gov (United States)

    Wang, Zhaolu; Liu, Hongjun; Sun, Qibing; Huang, Nan; Li, Shaopeng; Han, Jing

    2016-07-01

    We experimentally demonstrate ultra-low pump power wavelength conversion based on four-wave mixing in a silicon racetrack-shaped microring resonator. When the pump and signal are located at the resonance wavelengths, wavelength conversion with a pump power of only 1 mW can be realized in this microring resonator because of the resonant enhancement of the device. However, saturation of the conversion efficiency occurs because of the shift of the resonance peak, which is caused by the change of the effective refractive index induced by a combination of thermal and free carrier dispersion effects, and it is demonstrated that the thermal effect is the leading-order factor for the change of the refractive index. The maximum conversion efficiency of  ‑21 dB is obtained when the pump power is less than 12 mW. This ultra-low-power on-chip wavelength convertor based on a silicon microring resonator can find important potential applications in highly integrated optical circuits for all-optical signal processing.

  8. Optically tunable full 360° microwave photonic phase shifter using three cascaded silicon-on-insulator microring resonators

    Science.gov (United States)

    Ehteshami, Nasrin; Zhang, Weifeng; Yao, Jianping

    2016-08-01

    A broadband optically tunable microwave phase shifter with a tunable phase shift covering the entire 360° range using three cascaded silicon-on-insulator (SOI) microring resonators (MRRs) that are optically pumped is proposed and experimentally demonstrated. The phase tuning is implemented based on the thermal nonlinear effect in the MRRs. By optically pumping the MRRs, the stored light in the MRRs is absorbed due to two photon absorption (TPA) to generate free carriers, which result in free carrier absorption (FCA). The FCA effect would lead to the heating of the MRRs and cause a redshift in the phase response, which is used to implement a microwave phase shifter with a tunable phase shift. The device is designated and fabricated on an SOI platform, which is experimentally evaluated. The experimental results show that by optically pumping the MRRs, a broadband microwave photonic phase shifter with a bandwidth of 7 GHz from 16 to 23 GHz with a tunable phase shift covering the entire 360° phase shift range is achieved.

  9. Photothermally tunable silicon-microring-based optical add-drop filter through integrated light absorber.

    Science.gov (United States)

    Chen, Xi; Shi, Yuechun; Lou, Fei; Chen, Yiting; Yan, Min; Wosinski, Lech; Qiu, Min

    2014-10-20

    An optically pumped thermo-optic (TO) silicon ring add-drop filter with fast thermal response is experimentally demonstrated. We propose that metal-insulator-metal (MIM) light absorber can be integrated into silicon TO devices, acting as a localized heat source which can be activated remotely by a pump beam. The MIM absorber design introduces less thermal capacity to the device, compared to conventional electrically-driven approaches. Experimentally, the absorber-integrated add-drop filter shows an optical response time of 13.7 μs following the 10%-90% rule (equivalent to a exponential time constant of 5 μs) and a wavelength shift over pump power of 60 pm/mW. The photothermally tunable add-drop filter may provide new perspectives for all-optical routing and switching in integrated Si photonic circuits. PMID:25401557

  10. A silicon photonics circuit based on micro-ring resonators in the instantaneous frequency measurement system

    Science.gov (United States)

    Wang, Wanjun; Zhou, Jie; Wang, Jun; Feng, Junbo; Guo, Jin

    2015-10-01

    In this paper, a compact silicon photonics circuit is proposed. It consists of add-drop filter, input/output grating coupler. The resonance peak of add-drop filter can be tuned with the assist of p-i-n diode. The unknown frequency of microwave is loaded at the optical wave and coupled into the chip. The optical power ratio of through port and drop port is monotonous, which is corresponding to the unknown frequency. Meanwhile, the resonance peak of the ring can shift with the assist of p-i-n diode.

  11. Optically tunable Fano resonance in a grating-based Fabry-Perot cavity-coupled microring resonator on a silicon chip.

    Science.gov (United States)

    Zhang, Weifeng; Li, Wangzhe; Yao, Jianping

    2016-06-01

    A grating-based Fabry-Perot (FP) cavity-coupled microring resonator on a silicon chip is reported to demonstrate an all-optically tunable Fano resonance. In the device, an add-drop microring resonator (MRR) is employed, and one of the two bus waveguides is replaced by an FP cavity consisting of two sidewall Bragg gratings. By choosing the parameters of the gratings, the resonant mode of the FP cavity is coupled to one of the resonant modes of the MRR. Due to the coupling between the resonant modes, a Fano resonance with an asymmetric line shape resulted. Measurement results show a Fano resonance with an extinction ratio of 22.54 dB, and a slope rate of 250.4 dB/nm is achieved. A further study of the effect of the coupling on the Fano resonance is performed numerically and experimentally. Thanks to the strong light-confinement capacity of the MRR and the FP cavity, a strong two-photon absorption induced nonlinear thermal-optic effect resulted, which is used to tune the Fano resonance optically.

  12. Multiplex detection of pathogen biomarkers in human blood, serum, and saliva using silicon photonic microring resonators

    Science.gov (United States)

    Estrada, I. A.; Burlingame, R. W.; Wang, A. P.; Chawla, K.; Grove, T.; Wang, J.; Southern, S. O.; Iqbal, M.; Gunn, L. C.; Gleeson, M. A.

    2015-05-01

    Genalyte has developed a multiplex silicon photonic chip diagnostics platform (MaverickTM) for rapid detection of up to 32 biological analytes from a drop of sample in just 10 to 20 minutes. The chips are manufactured with waveguides adjacent to ring resonators, and probed with a continuously variable wavelength laser. A shift in the resonant wavelength as mass binds above the ring resonators is measured and is directly proportional to the amount of bound macromolecules. We present here the ability to multiplex the detection of hemorrhagic fever antigens in whole blood, serum, and saliva in a 16 minute assay. Our proof of concept testing of a multiplex antigencapture chip has the ability to detect Zaire Ebola (ZEBOV) recombinant soluble glycoprotein (rsGP), Marburg virus (MARV) Angola recombinant glycoprotein (rGP) and dengue nonstructural protein I (NS1). In parallel, detection of 2 malaria antigens has proven successful, but has yet to be incorporated into multiplex with the others. Each assay performs with sensitivity ranging from 1.6 ng/ml to 39 ng/ml depending on the antigen detected, and with minimal cross-reactivity.

  13. Athermal channeled spectropolarimeter

    Energy Technology Data Exchange (ETDEWEB)

    Jones, Julia Craven

    2015-12-08

    A temperature insensitive (athermal) channeled spectropolarimeter (CSP) is described. The athermal CSP includes a crystal retarder formed of a biaxial crystal. The crystal retarder has three crystal axes, wherein each axis has its own distinct index of refraction. The axes are oriented in a particular manner, causing an amplitude modulating carrier frequency induced by the crystal retarder to be thermally invariant. Accordingly, a calibration beam technique can be used over a relatively wide range of ambient temperatures, with a common calibration data set.

  14. Athermalized channeled spectropolarimeter enhancement.

    Energy Technology Data Exchange (ETDEWEB)

    Jones, Julia Craven; Way, Brandyn Michael; Mercier, Jeffrey Alan; Hunt, Jeffery P.

    2013-09-01

    Channeled spectropolarimetry can measure the complete polarization state of light as a function of wavelength. Typically, a channeled spectropolarimeter uses high order retarders made of uniaxial crystal to amplitude modulate the measured spectrum with the spectrally-dependent Stokes polarization information. A primary limitation of conventional channeled spectropolarimeters is related to the thermal variability of the retarders. Thermal variation often forces frequent system recalibration, particularly for field deployed systems. However, implementing thermally stable retarders, made of biaxial crystal, results in an athermal channeled spectropolarimeter that relieves the need for frequent recalibration. This report presents experimental results for an anthermalized channeled spectropolarimeter prototype produced using potassium titanyl phosphate. The results of this prototype are compared to the current thermal stabilization state of the art. Finally, the application of the technique to the thermal infrared is studied, and the athermalization concept is applied to an infrared imaging spectropolarimeter design.

  15. Automatic Resonance Alignment of High-Order Microring Filters

    CERN Document Server

    Mak, Jason C C; Xue, Tianyuan; Mikkelsen, Jared C; Yong, Zheng; Poon, Joyce K S

    2015-01-01

    Automatic resonance alignment tuning is performed in high-order series coupled microring filters using a feedback system. By inputting only a reference wavelength, a filter is tuned such that passband ripples are dramatically reduced compared to the initial detuned state and the passband becomes centered at the reference. The method is tested on 5th order microring filters fabricated in a standard silicon photonics foundry process. Repeatable tuning is demonstrated for filters on multiple dies from the wafer and for arbitrary reference wavelengths within the free spectral range of the microrings.

  16. 基于硅微环谐振腔中四波混频的波长转换改进模型%Modified model for four-wave mixing-based wavelength conversion in silicon micro-ring resonators

    Institute of Scientific and Technical Information of China (English)

    李志强; 高士明

    2011-01-01

    我们在原有硅基微环谐振器四波混频模型的基础上提出了改进模型,考虑了相位调制效应引起的非线性相移。模拟结果表明非线性相移将引起泵浦光和信号光谐振波长的红移,且移动量不同,这将引起信号光谐振峰和波长转换峰值波长的差异。转换效率和转换峰宽度都会受到微环半径、耦合系数等参数的影响,在 Q 值较小的微环谐振腔中可以获得的转换峰较宽。%In this paper, A modified model for wavelength conversion based on four-wave mixing (FWM) in a silicon micro-ring resonator is presented. The nonlinear phase shifts caused by self-phase modulation and cross-phase modulation are also taken into account in the present theoretical analysis besides the linear propagation loss, the nonlinear losses caused by two-photon absorption and free-carrier absorption. Analysis shows that the nonlinear phase shifts will cause different red shifts for the pump and signal (or converted) resonant wavelengths, and consequently an additional wavelength difference between the signal transmission dip and the efficiency peak, which will increase/decrease the conversion efficiency of the signal channel far from/near the pump. The conversion efficiency and the conversion peak width of each signal channel are both affected by the micro-ring radius and coupling coefficient. A broader conversion peak width can be obtained by using a micro-ring resonator with a smaller Q factor.

  17. Modulation Speed Enhancement of Directly Modulated Lasers Using a Micro-ring Resonator

    DEFF Research Database (Denmark)

    An, Yi; Lorences Riesgo, Abel; Seoane, Jorge;

    2012-01-01

    A silicon micro-ring resonator is used to enhance the modulation speed of a 10-Gbit/s directly modulated laser to 40 Gbit/s, demonstrating a potentially integratable transmitter design for high-speed optical interconnects....

  18. Tunable filter based on silicon-on-insulator microring resonator%SoI基微环谐振可调谐滤波器

    Institute of Scientific and Technical Information of China (English)

    姜宏伟; 吴远大

    2011-01-01

    采用电子束光刻和ICP刻蚀等工艺制作出绝缘体上Si(SoI)基纳米线波导微环谐振(MRR)滤波器,波导截面尺寸为300 nm×320 nm,微环半径为5 μm.测试结果表明,器件的自由频谱宽度(FSR)为16.8nm,1.55μm波长附近的消光比(ER)为18.1 dB.通过对MRR滤波器进行热光调制,在21.4~60.0℃温度范围内实现了4.8 nm波长范围的可调谐滤波特性,热光调谐效率达到0.12nm/℃.%Microring-resonator filters are fabricated by E-beam photolithography and inductive-coupled-plasma(ICP) etching technology. The cross-section size of the strip waveguides is 300 nm×320 ran,and the bending radius of the microring is 5 fun. The measured results show that the free spectral range (FSR) and extinction ratio (ER) at the wavelength of 1550 nm are 16. 8 nm and 18.1 dB,respectively. After thermo-optic modulation, the tunable filter wavelength range reaches 4. 8 nm,and the tuning efficiency is 0.12 nm /℃.

  19. Optical passive athermalization for infrared zoom system

    Science.gov (United States)

    Li, Shenghui; Yang, Changcheng; Zheng, Jia; Lan, Ning; Xiong, Tao; Li, Yong

    2007-12-01

    In an infrared zoom system, it is difficult to obtain the best thermal compensation for all effective focal length (EFL) simultaneously by moving a single lens group. According to the principle of optical passive athermalization, the equations of focal length, achromatization and athermalization of both long and short EFL are established respectively. By analyzing the thermal aberration value relations between long EFL and short EFL, the thermal aberration values of the switching groups for short EFL athermalization are calculated. Firstly, the athermalization of long EFL is designed. Then through reasonable optical materials matching of the switching groups, the short EFL achieves athermalization as well. In this paper, a re-imaging switching zoom system is designed. It has a relative aperture of f/4.0, 100% cold shield efficiency, the EFL of 180mm/30mm at 3.7-4.8μm. The long EFL includes four refractive elements and one hybrid refractive/diffractive element. The switching groups of short EFL have two types, one is composed of four refractive elements, and the other is composed of two refractive elements and one hybrid refractive/diffractive element. Both of the short EFL achieve athermalization. With the aluminum materials of system structures, the zoom system achieves optical passive athermalization. It has the diffraction limited image quality and stable image plane from -30°C to 70°C.

  20. High-q microring resonator with narrow free spectral range for pulse repetition rate multiplication

    DEFF Research Database (Denmark)

    Pu, Minhao; Ji, Hua; Frandsen, Lars Hagedorn;

    2009-01-01

    We demonstrate a silicon-on-insulator microring resonator with a free-spectral-range of 0.32 nm, an extinction ratio of 27 dB, and a quality factor of ~140900 at 1550 nm that is used for pulse repetition-rate multiplication from 10 to 40 GHz.......We demonstrate a silicon-on-insulator microring resonator with a free-spectral-range of 0.32 nm, an extinction ratio of 27 dB, and a quality factor of ~140900 at 1550 nm that is used for pulse repetition-rate multiplication from 10 to 40 GHz....

  1. Transmission Property of Directly Modulated Signals Enhanced by a Micro-ring Resonator

    DEFF Research Database (Denmark)

    An, Yi; Lorences Riesgo, Abel; Seoane, Jorge;

    2012-01-01

    A silicon micro-ring resonator is used to enhance the modulation speed of a 10-Gbit/s directly modulated laser to 40 Gbit/s. The generated signal is transmitted error free over 4.5 km SSMF. Dispersion tolerance is also studied....

  2. Protein detection on biotin-derivatized polyallylamine by optical microring resonators

    NARCIS (Netherlands)

    Ullien, D.; Harmsma, P.J.; Chakkalakkal Abdulla, S.M.C.; Boer, B.M. de; Bosma, D.; Sudhölter, E.J.R.; Smet, L.C.P.M. de; Jager, W.F.

    2014-01-01

    Silicon optical microring resonators (MRRs) are sensitive devices that can be used for biosensing. We present a novel biosensing platform based on the application of polyelectrolyte (PE) layers on such MRRs. The top PE layer was covalently labeled with biotin to ensure binding sites for antibodies v

  3. The Wavelength Shifting and Temperature Athermalization of Fiber Bragg Grating

    Institute of Scientific and Technical Information of China (English)

    Yu; e; Kong

    2003-01-01

    The wavelength shifting properties and the temperature athermalization technology of fiber Bragg grating (FBG) were studied in this paper, and then two different athermalization methods were introduced. The research shows that FBG with athermalization by applying the substrate with negative coefficient of thermal expansion is effective and can be used in many fields.

  4. Selective mode coupling in microring resonators for single mode semiconductor lasers

    Science.gov (United States)

    Arbabi, Amir

    Single mode semiconductor laser diodes have many applications in optical communications, metrology and sensing. Edge-emitting single mode lasers commonly use distributed feedback structures, or narrowband reflectors such as distributed Bragg reflectors (DBRs) and sampled grating distributed Bragg reflectors (SGDBRs). Compact, narrowband reflectors with high reflectivities are of interest to replace the commonly used DBRs and SGDBRs. This thesis presents our work on the simulation, design, fabrication, and characterization of devices operating based on the coupling of degenerate modes of a microring resonator, and investigation of the possibility of using them for improving the performance of laser diodes. In particular, we demonstrate a new type of compact, narrowband, on-chip reflector realized by selectively coupling degenerate modes of a microring resonator. For the simulation and design of reflective microring resonators, a fast and accurate analysis method is required. Conventional numerical methods for solving Maxwell's equations such as the finite difference time domain and the finite element method (FEM) provide accurate results but are computationally intense and are not suitable for the design of large 3D structures. We formulated a set of coupled mode equations that, combined with 2D FEM simulations, can provide a fast and accurate tool for the modeling and design of reflective microrings. We developed fabrication processing recipes and fabricated passive reflective microrings on silicon substrates with a silicon nitride core and silicon dioxide cladding. Narrowband single wavelength reflectors were realized which are 70 times smaller than a conventional DBR with the same bandwidth. Compared to the conventional DBR, they have faster roll-off, and no side modes. The smaller footprint saves real estate, reduces tuning power and makes these devices attractive as in-line mirrors for low threshold narrow linewidth laser diodes. Self-heating caused by material

  5. Co-polymer clad design for high performance athermal photonic circuits.

    Science.gov (United States)

    Raghunathan, Vivek; Yagüe, Jose Luis; Xu, Jingjing; Michel, Jurgen; Gleason, Karen K; Kimerling, Lionel C

    2012-09-10

    Ubiquitous, low power consumption and high bandwidth density communication will require passive athermal optical filters for WDM transceivers in Si-CMOS architecture. Two silicon-polymer composite structures, deposited using initiated chemical vapor deposition (iCVD), poly(perfluorodecyl acrylate) (pPFDA) and poly(perfluorodecyl acrylate-co-divinyl benzene) p(PFDA-co-DVB), are analyzed as candidates for thermal compensation. The addition of DVB to a fluorinated acrylate backbone reduces the C-F bond density, increases the density in the copolymer and thereby increases refractive index. The addition of DVB also increases the volume expansion coefficient of the copolymer, resulting in an increased thermo-optic (TO) coefficient for the copolymer system. The increased index and TO coefficient of the co-polymer gives improved bend loss, footprint and FSR performance for athermal silicon photonic circuits.

  6. Study of a middle-wavelength infrared athermalized optical system

    Institute of Scientific and Technical Information of China (English)

    GAO Hong-yun; XIONG Tao; LI Sheng-hui

    2008-01-01

    For cooled 320×240 detector with stating focal plane array, a novel middle infi'arod athermal optical system is presented. The system is composed of 5 spherical lenses. The materials of lenses are silicon and germanium. The optical parameters and modulation transfer function (MTF) are investigated. The system has the diffraction limited image quality and stable image plane from -30℃ to 70 ℃. The characteristic parameters of the system are as follows:flnumber of 4, cold shield efficiency of 100%, spectrum region of 3.7-4.8 μm and transmissivity of 80%. The system has the merits of simple structure, low price, and it is easy to machining.

  7. 41.6 Gb/s RZ-DPSK to NRZ-DPSK Format Conversion in a Microring Resonator

    DEFF Research Database (Denmark)

    Xiong, Meng; Ozolins, Oskars; Ding, Yunhong;

    2012-01-01

    RZ-DPSK to NRZ-DPSK format conversion in a silicon microring resonator is demonstrated experimentally for the first time at 41.6 Gb/s. The converted signal eye diagrams and bit-error-rate measurements show the good performance of the scheme........RZ-DPSK to NRZ-DPSK format conversion in a silicon microring resonator is demonstrated experimentally for the first time at 41.6 Gb/s. The converted signal eye diagrams and bit-error-rate measurements show the good performance of the scheme.....

  8. 硅基槽式微环谐振腔型偏振解复用器全矢量分析∗%Full-vectorial analysis of a p olarization demultiplexer using a microring resonator with silicon-based slot waveguides

    Institute of Scientific and Technical Information of China (English)

    肖金标; 罗辉; 徐银; 孙小菡

    2015-01-01

    Photonic integrated circuits (PICs) based on silicon-on-insulator (SOI) platform with the advantages of high-index-contrast and CMOS-compatible process can efficiently reduce the component sizes and densely integrate them at a chip scale. To meet the ever-increasing demand for the optical interconnect capacity, various multiplexing techniques have been used. However, it should still be proposed to effectively reduce the component size accompanied with the reasonable performance and wavelength division multiplexing (WDM) compatibility. To the best of our knowledge, there has no attempt so far to design a polarization demultiplexer based on a microring resonator in slot waveguide structures. In this paper, a compact silicon-based polarization demultiplexer is proposed, where two regular silicon-based waveguides are used as the input/output channels and a microring in slot waveguide structures is used as the polarization/wavelength-selective component. A full-vectorial finite-difference frequency-domain method is utilized to study the modal characteristics of the regular and slot silicon-based waveguides, where the effective indices and coupling for transverse magnetic (TM) and transverse electric (TE) modes are presented. With the unique modal characteristics of slot waveguides and the strong polarization-dependent features of microring resonator, we can show that the field distributions and the effective indices of the TM mode between the regular and slot waveguides are similar, while those of the TE mode show clearly different. As a result, the input TM mode outputs from the drop port at the resonant wavelength, while the input TE mode outputs from the through port directly with nearly neglected coupling, thus the two polarizations are separated efficiently. A three-dimensional finite-difference time-domain method is utilized to study the spectrum and transmission characteristics of the proposed device. From the results, a polarization demultiplexer with a radius

  9. Full-vectorial analysis of a p olarization demultiplexer using a microring resonator with silicon-based slot waveguides%硅基槽式微环谐振腔型偏振解复用器全矢量分析∗

    Institute of Scientific and Technical Information of China (English)

    肖金标; 罗辉; 徐银; 孙小菡

    2015-01-01

    Photonic integrated circuits (PICs) based on silicon-on-insulator (SOI) platform with the advantages of high-index-contrast and CMOS-compatible process can efficiently reduce the component sizes and densely integrate them at a chip scale. To meet the ever-increasing demand for the optical interconnect capacity, various multiplexing techniques have been used. However, it should still be proposed to effectively reduce the component size accompanied with the reasonable performance and wavelength division multiplexing (WDM) compatibility. To the best of our knowledge, there has no attempt so far to design a polarization demultiplexer based on a microring resonator in slot waveguide structures. In this paper, a compact silicon-based polarization demultiplexer is proposed, where two regular silicon-based waveguides are used as the input/output channels and a microring in slot waveguide structures is used as the polarization/wavelength-selective component. A full-vectorial finite-difference frequency-domain method is utilized to study the modal characteristics of the regular and slot silicon-based waveguides, where the effective indices and coupling for transverse magnetic (TM) and transverse electric (TE) modes are presented. With the unique modal characteristics of slot waveguides and the strong polarization-dependent features of microring resonator, we can show that the field distributions and the effective indices of the TM mode between the regular and slot waveguides are similar, while those of the TE mode show clearly different. As a result, the input TM mode outputs from the drop port at the resonant wavelength, while the input TE mode outputs from the through port directly with nearly neglected coupling, thus the two polarizations are separated efficiently. A three-dimensional finite-difference time-domain method is utilized to study the spectrum and transmission characteristics of the proposed device. From the results, a polarization demultiplexer with a radius

  10. Flexible optical network components based on densely integrated microring resonators

    NARCIS (Netherlands)

    Geuzebroek, Douwe Harmen

    2005-01-01

    This thesis addresses the design, realization and characterization of reconfigurable optical network components based on multiple microring resonators. Since thermally tunable microring resonators can be used as wavelength selective space switches, very compact devices with high complexity and flexi

  11. Optical frequency comb generation from aluminum nitride micro-ring resonator

    OpenAIRE

    Jung, Hojoong; Xiong, Chi; Fong, King Y.; Zhang, Xufeng; Hong X. Tang

    2013-01-01

    Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single wavelength continuous-wave pump laser. The Kerr coe...

  12. Direct-Digital-Drive Microring Modulator

    CERN Document Server

    Ehrlichman, Yossef; Ruschin, Shlomo

    2016-01-01

    The method of Direct Digital Drive is applied to a microring resonator. The microring resonator is thus controlled by a segmented set of electrodes each of which is driven by binary (digital) signal. Digital linearization is performed with the aid of digital memory lookup table. The method is applied to a single microring modulator to provide an M-bit digital-toanalog converter (DAC), which may also be viewed as an M-level pulse amplitude modulator (M-PAM). It is shown, by means of simulation, that a 4-bit DAC can achieve an effective number of bits (ENOB) of 3.74bits. Applying the same method for two rings, enables the generation of two-dimensional optical M-QAM signals. It is shown, by means of simulation, that a 16-QAM modulator achieves an EVM better than -30dB.

  13. Inline microring reflector for photonic applications

    Science.gov (United States)

    Kang, Young Mo

    The microring is a compact resonator that is used as a versatile building block in photonic circuits ranging from filters, modulators, logic gates, sensors, switches, multiplexers, and laser cavities. The Bragg grating is a periodic structure that allows the selection of a narrow bandwidth of spectrum for stable lasing operation. In this dissertation, we study analysis and simulations of a compact microring based reflector assembled by forming a Bragg grating into a loop. With the appropriate design, the microring resonance can precisely align with the reflection peak of the grating while all other peaks are suppressed by reflection nulls of the grating. The field buildup at the resonance effectively amplifies small reflection of the grating, thereby producing significant overall reflection from the ring, and it is possible to achieve a stable narrow linewidth compact laser by forming a single mode laser cavity. The device operation principle is studied from two distinct perspectives; the first looks at coupling of two contra-directional traveling waves within the ring whereas the second aspect investigates relative excitation of the two competing microring resonant modes. In the former method, we relate the steady state amplitudes of the two traveling waves to the reflection spectrum of the grating and solve for the reflection and transmission response for each wavelength of interest. In the latter approach, we expand the field in terms of the resonant modes of the ring cavity and derive transfer functions for reflection and transmission from the nearby mode frequencies. The angular periodicity of the reflective microring geometry allows us to effectively simulate the resonant modes from a computational domain of a single period grating when the continuity boundary condition is applied. We successfully predict the reflection and transmission response of a Si3N 4/SiO2 microring reflector using this method---otherwise too large to carry out full-wave simulation

  14. Design of high Isolation benzocyclobutene microring resonator

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    We report the design of benzocyclobutene microring resonator of symmetric coupling made of a readily available polymer with a higher isolation of 43.8 dB, a finesse of 34, and a Q value of 1.5 × 10s. The FDTD method predicts a drop efficiencyof almost 80% for a gap of 0.55μm.

  15. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.;

    2013-01-01

    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

  16. Elastic regimes of subisostatic athermal fiber networks.

    Science.gov (United States)

    Licup, A J; Sharma, A; MacKintosh, F C

    2016-01-01

    Athermal models of disordered fibrous networks are highly useful for studying the mechanics of elastic networks composed of stiff biopolymers. The underlying network architecture is a key aspect that can affect the elastic properties of these systems, which include rich linear and nonlinear elasticity. Existing computational approaches have focused on both lattice-based and off-lattice networks obtained from the random placement of rods. It is not obvious, a priori, whether the two architectures have fundamentally similar or different mechanics. If they are different, it is not clear which of these represents a better model for biological networks. Here, we show that both approaches are essentially equivalent for the same network connectivity, provided the networks are subisostatic with respect to central force interactions. Moreover, for a given subisostatic connectivity, we even find that lattice-based networks in both two and three dimensions exhibit nearly identical nonlinear elastic response. We provide a description of the linear mechanics for both architectures in terms of a scaling function. We also show that the nonlinear regime is dominated by fiber bending and that stiffening originates from the stabilization of subisostatic networks by stress. We propose a generalized relation for this regime in terms of the self-generated normal stresses that develop under deformation. Different network architectures have different susceptibilities to the normal stress but essentially exhibit the same nonlinear mechanics. Such a stiffening mechanism has been shown to successfully capture the nonlinear mechanics of collagen networks. PMID:26871101

  17. Flexible optical network components based on densely integrated microring resonators

    OpenAIRE

    Geuzebroek, Douwe Harmen

    2005-01-01

    This thesis addresses the design, realization and characterization of reconfigurable optical network components based on multiple microring resonators. Since thermally tunable microring resonators can be used as wavelength selective space switches, very compact devices with high complexity and flexibility can be created.

  18. Optical frequency comb generation from aluminum nitride micro-ring resonator

    CERN Document Server

    Jung, Hojoong; Fong, King Y; Zhang, Xufeng; Tang, Hong X

    2013-01-01

    Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single wavelength continuous-wave pump laser. The Kerr coefficient (n2) of aluminum nitride is further extracted from our experimental results.

  19. Athermalization and thermal characteristics of multilayer diffractive optical elements.

    Science.gov (United States)

    Wang, Ju; Xue, Changxi

    2015-11-20

    A mathematical model to analyze the thermal characteristics of the multilayer diffractive optical elements (MLDOEs) is presented with consideration of the thermal characteristics for the refractive optical elements and single-layer diffractive optical elements. The analysis process of athermalization for MLDOEs by using the opto-thermal expansion coefficient of optical materials is given. Meanwhile, the microstructure heights of surface relief MLDOEs, the optical path difference, and the polychromatic integral diffraction efficiency with the ambient temperature changed are analyzed. The analysis results can be used to guide an athermalization design for the hybrid refractive-diffractive optical systems with MLDOEs. PMID:26836521

  20. Athermal narrow-band optical filter at 1.55μm wavelength by silica-based athermal waveguide

    OpenAIRE

    Kokubun, Yasuo; Yoneda, Shigeru; Matsuura, Shinnosuke

    1998-01-01

    The temperature dependence of central wavelength of optical filters is a serious problem for the dense WDM systems. This dependence is owing to the temperature dependence of optical path-length of the waveguide. In this study, we realized a temperature independent silica-based optical filter at 1.55μm wavelength using an athermal waveguide, in which optical pathlength is independent of temperature. First, we designed a silica-based athermal waveguide, and next we designed and fabricated a rin...

  1. Athermalization of polymer radial gradient-index singlets

    Science.gov (United States)

    Corsetti, James A.; Gardner, Leo R.; Schmidt, Greg R.; Moore, Duncan T.

    2013-11-01

    The article explores the possibility of athermalizing a gradient-index (GRIN) lens so that the effective focal length (EFL) of the element remains constant over a change in temperature. This is accomplished by designing the lens so that the surface curvatures and index profile compensate for one another over a change in temperature to maintain constant optical power. The means to determine how the lens geometry and index profile change with temperature for both a homogeneous and radial GRIN are explained. An analytic model for the purpose of identifying athermalized GRIN singlets is described and validated against the previous work in this field. The model is used to identify an athermalized polymer radial GRIN element and compare it with four other polymer elements of the same focal length but different index profiles, including a homogeneous one. Comparison of these singlets in CODE V optical design software shows that the athermalized GRIN element maintains its nominal EFL over a temperature change the best of the five in the group while the homogeneous element (having no GRIN profile to counteract the effect of temperature on the surface curvatures) has the poorest performance. A numerical model to analyze more complicated GRIN systems is discussed.

  2. The electrophotonic silicon biosensor

    Science.gov (United States)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-01-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale. PMID:27624590

  3. Material properties of silicon and silicon carbide foams

    Science.gov (United States)

    Jacoby, Marc T.; Goodman, William A.

    2005-08-01

    Silicon and silicon carbide foams provide the lightweighting element for Schafer Corporation's silicon and silicon carbide lightweight mirror systems (SLMSTM and SiC-SLMSTM). SLMSTM and SiC-SLMSTM provide the enabling technology for manufacturing lightweight, athermal optical sub-assemblies and instruments. Silicon and silicon carbide foam samples were manufactured and tested under a Schafer-funded Internal Research and Development program in various configurations to obtain mechanical and thermal property data. The results of the mechanical tests that are reported in this paper include Young's modulus, compression strength, tensile strength, Poisson's ratio and vibrational damping. The results of the thermal tests include thermal conductivity and coefficient of thermal expansion.

  4. Simultaneous Polarization Demultiplexing and Demodulation of PolMux-DPSK Signals in a Silicon Chip

    DEFF Research Database (Denmark)

    Huang, Bo; Ding, Yunhong; Ou, Haiyan;

    2013-01-01

    Simultaneous polarization demultiplexing and demodulation of PolMux-DPSK signals is demonstrated using a polarization splitter and rotator together with a single microring resonator on a silicon chip. System experimental results validate the concept.......Simultaneous polarization demultiplexing and demodulation of PolMux-DPSK signals is demonstrated using a polarization splitter and rotator together with a single microring resonator on a silicon chip. System experimental results validate the concept....

  5. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

  6. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) proposes to manufacture new silicon carbide (SiC) foam-based optics that are composite, athermal and lightweight (FOCAL) that provide...

  7. Graphically Selecting Optical Material for Color Correction and Passive Athermalization

    Directory of Open Access Journals (Sweden)

    Raghad Ismail Ibrahim

    2016-04-01

    Full Text Available This paper presents pair optical glass by using a graphical method for selecting achromatize and athermalize an imaging lens. An athermal glass map that plots thermal glass constant versus inverse Abbe number is derived through analysis of optical glasses in visible light. By introducing the equivalent Abbe number and equivalent thermal glass constant, although it is a multi-lens system, we have a simple way to visually identify possible optical materials. ZEMAX will be used to determine the change in focus through the expected temperature changes in Earth orbit. The thermal defocuses over -20°C to +60°C are reduced to be much less than the depth of focus of the system

  8. A-thermal elastic behavior of silicate glasses.

    Science.gov (United States)

    Rabia, Mohammed Kamel; Degioanni, Simon; Martinet, Christine; Le Brusq, Jacques; Champagnon, Bernard; Vouagner, Dominique

    2016-02-24

    Depending on the composition of silicate glasses, their elastic moduli can increase or decrease as function of the temperature. Studying the Brillouin frequency shift of these glasses versus temperature allows the a-thermal composition corresponding to an intermediate glass to be determined. In an intermediate glass, the elastic moduli are independent of the temperature over a large temperature range. For sodium alumino-silicate glasses, the a-thermal composition is close to the albite glass (NaAlSi3O8). The structural origin of this property is studied by in situ high temperature Raman scattering. The structure of the intermediate albite glass and of silica are compared at different temperatures between room temperature and 600 °C. When the temperature increases, it is shown that the high frequency shift of the main band at 440 cm(-1) in silica is a consequence of the cristobalite-like alpha-beta transformation of 6-membered rings. This effect is stronger in silica than bond elongation (anharmonic effects). As a consequence, the elastic moduli of silica increase as the temperature increases. In the albite glass, the substitution of 25% of Si(4+) ions by Al(3+) and Na(+) ions decreases the proportion of SiO2 6-membered rings responsible for the silica anomaly. The effects of the silica anomaly balance the anharmonicity in albite glass and give rise to an intermediate a-thermal glass. Different networks, formers or modifiers, can be added to produce different a-thermal glasses with useful mechanical or chemical properties. PMID:26815634

  9. Athermalization for infrared dual field-of-view optical system

    Science.gov (United States)

    Yang, Changcheng; Li, Shenghui

    2008-03-01

    With the principle of mechanical passive athermalization, a method of making the dual field-of-view (DFOV) switching zoom system for passive athermalization is presented. The long effective focal length (EFL) and short EFL have the same focus shift values of temperature by optical material combination of switching groups. So the long EFL and short EFL of this system achieve the best temperature compensation simultaneously by moving the compensated lens with the same distance, and the system has the best images and parfocality in a large working temperature. A DFOV switching zoom system is designed. It has a relative aperture of f/4.0, 100% cold shield efficiency, the EFL of 180mm/60mm at 3.7-4.8μm. The movement of compensated lens can be achieved with four layers of aluminum/titanium materials. Compared with the MTF of a normal switching zoom system without athermalization, this system needn't move the compensated lens repeatedly to obtain the best images from -30°C to 70°C and enhances the performance of target tracking and recognition.

  10. [Study on Strain Detection with Si Based on Bicyclic Cascade Optical Microring Resonator].

    Science.gov (United States)

    Tang, Jun; Lei, Long-hai; Zhang, Wei; Zhang, Tian-en; Xue, Chen-yang; Zhang, Wen-dong; Liu, Jun

    2016-03-01

    Optical micro-ring resonator prepared on Silicon-On-Insulator (SOI) has high sensitivity, small size and low mode volume. Its high sensitivity has been widely applied to the optical information transmission and inertial navigation devices field, while it is rarely applied in the testing of Mechanics. This paper presents a cantilever stress/strain gauge with an optical microring resonator. It is proposed the using of radius change of ring waveguide for the sensing element. When external stress is put on the structure, the radius of the SOI ring waveguide will be subjected to variation, which causes the optical resonant parameters to change. This ultimately leads to a red-shift of resonant spectrum, and shows the excellent characteristics of the structure's stress/strain sensitivity. Designed a bicyclic cascade embedded optical micro-cavity structure, which was prepared by employing MEMS lithography and ICP etching process. The characteristic of stress/strain sensitivity was calculated theoretically. Two values of 0.185 pm x kPa(-1) and 18.04 pm x microstrain(-1) were obtained experimentally, which also was verified by theoretical simulations. Comparing with the single-loop micro-cavity structure, its measuring range and stress sensitivity increased by nearly 50.3%, 10.6%, respectively. This paper provides a new method to develop micro-opto-electromechanical system (MOEMS) sensors. PMID:27400541

  11. Single-photon all-optical switching using coupled microring resonators

    Indian Academy of Sciences (India)

    Wenge Yang; Amitabh Joshi; Min Xiao

    2007-08-01

    We study the nonlinear phase response of a microring resonator coupled to a bus waveguide and the use of this nonlinear phase shift to store information in the microring resonator and enhance the switching characteristics of a Mach–Zehnder interferometer (MZI). By introducing coupling between adjacent microring resonators, the switching characteristics of the MZI can be exponentially enhanced as a function of the number of microring resonators, when compared to the linear enhancement for uncoupled resonators. With only a few moderate-finesse microring resonators, the switching power can be reduced to attowatt level, allowing for photonic switching devices that operate at single-photon level in ordinary optical waveguides.

  12. Athermal bladder neck dissection during robot-assisted radical prostatectomy

    Directory of Open Access Journals (Sweden)

    Fabrizio Dal Moro

    2014-06-01

    Full Text Available Introduction With improved understanding of the precise anatomy, surgical techniques during robot-assisted radical prostatectomy (RARP have been refined, with the aim of improving functional outcomes without compromising oncological adequacy and results. Nevertheless, postoperative urinary incontinence remains a frustrating side-effect. Anatomically, bladder neck (BN serves as an internal sphincter. The longitudinal fibres of BN may be identified and isolated with a meticulous dissection at the prostato-vesical junction, contributing to earlier return of urinary continence. The purpose of this video is to show an anatomical athermal dissection of BN during RARP.Materials and Methods After incision of endopelvic fascia and anterior defatting, the morphology of prostate not only laterally, but also at the level of bladder-prostatic junction is well visualized. With an athermal dissection of the plane between prostate and bladder we can minimize the traumatic effects on the longitudinal fibres of BN. A cold section of the preserved BN permits the complete preservation of integrity of this sphincteric structure.Results With this technique we preserve the longitudinal fibres of BN, allowing the sparing of the sphincteric mechanism of BN. The finding of a difficult athermal dissection of these plans may make you suspect the presence of an infiltration, suggesting to sacrifice BN in order to avoid a positive surgical margin. In our series no increase of PSM has been recorded using this technique.Conclusions This surgical technique preserving the natural BN mechanism appears to improve urinary continence, allowing at the same time an easy identification of a neoplastic infiltration.

  13. Time-dependent phenomena in athermal martensitic transformations

    International Nuclear Information System (INIS)

    The unexpected finding of time-dependent behaviour in athermal martensitic transformations (MT) above the MS temperature has prompted many experimental studies of incubation time. We review here various data scattered in the literature, emphasising the seminal experimental and theoretical work by Kakeshita et al. Contradicting experimental results and alternative concepts as put forward by Otsuka et al. and Planes et al. are discussed in some detail as well. Future experiments to clarify the situation are suggested, in particular the application of X-ray photon correlation spectroscopy to extend the range of observable time scales into regimes dominated by the dynamics of potential embryonic fluctuations

  14. Architectures for evanescent frequency tuning of microring resonators in micro-opto-electro-mechanical SOI platforms

    Science.gov (United States)

    Shoman, Hossam; Dahlem, Marcus S.

    2015-02-01

    Microring resonators are important elements in a wide variety of optical systems, ranging from optical switches and tunable filterbanks to optical sensors. In these structures, the resonant frequencies are normally controlled by tuning the effective index of refraction. In optical switches and filters, this has traditionally been achieved through electro-optic or thermo-optic effects. In sensors, the effective refractive index is changed by the presence of the measurand. Adding a mechanical degree of freedom to these optical systems allows additional evanescent frequency tuning. In particular, the presence of a cantilever in the near-field of the optical mode can tune the effective refractive index. A specific cantilever displacement can therefore induce a desired resonant frequency shift. Alternatively, a measured shift in the resonant frequency can be associated with a cantilever displacement, and be used for pressure or acceleration sensing. In this paper, we explore a geometry that can be used for controlling the resonant frequency of a microring resonator through evanescent field perturbation, using a cantilever defined in the same silicon layer as the optical waveguides, in a silicon-on-insulator platform. The effects of the lateral gap size between the optical waveguide and the cantilever, and the cantilever vertical displacement, on both the resonant frequency and quality factor of the resonator, are evaluated through finite-difference timedomain computations for wavelengths centered at 1550 nm. The presence of the cantilever in the near-field of the optical mode changes the effective refractive index, resulting in frequency tuning, but also lowers the quality factor due to additional coupling into the membrane.

  15. Oscillatory athermal quasistatic deformation of a model glass

    Science.gov (United States)

    Fiocco, Davide; Foffi, Giuseppe; Sastry, Srikanth

    2013-08-01

    We report computer simulations of oscillatory athermal quasistatic shear deformation of dense amorphous samples of a three-dimensional model glass former. A dynamical transition is observed as the amplitude of the deformation is varied: For large values of the amplitude the system exhibits diffusive behavior and loss of memory of the initial conditions, whereas localization is observed for small amplitudes. Our results suggest that the same kind of transition found in driven colloidal systems is present in the case of amorphous solids (e.g., metallic glasses). The onset of the transition is shown to be related to the onset of energy dissipation. Shear banding is observed for large system sizes, without, however, affecting qualitative aspects of the transition.

  16. Athermalization of resonant optical devices via thermo-mechanical feedback

    Science.gov (United States)

    Rakich, Peter; Nielson, Gregory N.; Lentine, Anthony L.

    2016-01-19

    A passively athermal photonic system including a photonic circuit having a substrate and an optical cavity defined on the substrate, and passive temperature-responsive provisions for inducing strain in the optical cavity of the photonic circuit to compensate for a thermo-optic effect resulting from a temperature change in the optical cavity of the photonic circuit. Also disclosed is a method of passively compensating for a temperature dependent thermo-optic effect resulting on an optical cavity of a photonic circuit including the step of passively inducing strain in the optical cavity as a function of a temperature change of the optical cavity thereby producing an elasto-optic effect in the optical cavity to compensate for the thermo-optic effect resulting on an optical cavity due to the temperature change.

  17. Athermal Energy Loss from X-Rays Deposited in Thin Superconducting Bilayers on Solid Substrates

    Science.gov (United States)

    Bandler, Simon R.; Kozorezov, Alexander; Balvin, Manuel A.; Busch, Sarah E.; Nagler, Peter N.; Porst, Jan-Patrick; Smith, Stephen J.; Stevenson, Thomas R.; Sadleir, John E.; Seidel, George M.

    2012-01-01

    An important feature that determines the energy resolution of any type of thin film microcalorimeter is the fraction of athermal energy that can be lost to the heat bath prior to the device coming into thermal equilibrium.

  18. Ultrasonic synthesis, formation mechanism and optical properties of single-crystalline Pb(OH)Br microrings

    Energy Technology Data Exchange (ETDEWEB)

    Wang Guizhen, E-mail: wangguizhen0@hotmail.com [Key Laboratory of Ministry of Education for Application Technology of Chemical Materials in Hainan Superior Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Key Laboratory of Chinese Education Ministry for Tropical Biological Resources, Hainan University, Haikou 570228 (China); Wan Gengping [Key Laboratory of Ministry of Education for Application Technology of Chemical Materials in Hainan Superior Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Key Laboratory of Chinese Education Ministry for Tropical Biological Resources, Hainan University, Haikou 570228 (China); Lin Shiwei; Yu Wenhui [Key Laboratory of Ministry of Education for Application Technology of Chemical Materials in Hainan Superior Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Elliptic Pb(OH)Br microrings were synthesized by a simple sonochemical process. Black-Right-Pointing-Pointer Size distribution of the median holes could be controlled. Black-Right-Pointing-Pointer Microrings were formed by ultrasonic etching accompanying the Ostwald ripening. Black-Right-Pointing-Pointer Pb(OH)Br microrings exhibit optical properties of semiconductors. - Abstract: Novel elliptic Pb(OH)Br microrings have been controllably synthesized on a large scale by a simple sonochemical process in aqueous solution. The structure characterizations of such microrings were investigated in detail by means of X-ray powder diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. The results indicate that the uniform orthorhombic phase of Pb(OH)Br microrings with good crystallinity can be obtained and such ring-like Pb(OH)Br is single crystalline with the (0 1 1) plane as the 2D exposed surface. The influence of reaction time and alkali sources on the evolution of structures has been studied. The possible hollowing growth mechanism for the Pb(OH)Br microrings has been discussed. Meanwhile, the ultraviolet-visible absorbance spectra and photoluminescence microrings show their ultraviolet absorption and green emitting behavior, indicating that the elliptic Pb(OH)Br microrings have great potential to be applied in luminescent and optoelectronic devices.

  19. Ultrasonic synthesis, formation mechanism and optical properties of single-crystalline Pb(OH)Br microrings

    International Nuclear Information System (INIS)

    Highlights: ► Elliptic Pb(OH)Br microrings were synthesized by a simple sonochemical process. ► Size distribution of the median holes could be controlled. ► Microrings were formed by ultrasonic etching accompanying the Ostwald ripening. ► Pb(OH)Br microrings exhibit optical properties of semiconductors. - Abstract: Novel elliptic Pb(OH)Br microrings have been controllably synthesized on a large scale by a simple sonochemical process in aqueous solution. The structure characterizations of such microrings were investigated in detail by means of X-ray powder diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. The results indicate that the uniform orthorhombic phase of Pb(OH)Br microrings with good crystallinity can be obtained and such ring-like Pb(OH)Br is single crystalline with the (0 1 1) plane as the 2D exposed surface. The influence of reaction time and alkali sources on the evolution of structures has been studied. The possible hollowing growth mechanism for the Pb(OH)Br microrings has been discussed. Meanwhile, the ultraviolet–visible absorbance spectra and photoluminescence microrings show their ultraviolet absorption and green emitting behavior, indicating that the elliptic Pb(OH)Br microrings have great potential to be applied in luminescent and optoelectronic devices.

  20. Temperature-indepoendent narrow-band optical filter by an athermal waveguide

    OpenAIRE

    Kokubun, Yasuo; Yoneda, Shigeru; Tanaka, Hiroaki

    1997-01-01

    The temperature dependence of the central wavelength of narrow-band filters is a serious problem for the dense WDM systems. In this study, we realized a temperature independent narrow-band filter at 1.3μm wavelength. First, we designed an athermal waveguide in which optical path length is independent of temperature by using a finite element method. Using this athermal waveguide, we designed and fabricated a ring resonator. As a result, we successfully decreased the temperature coefficient of ...

  1. A Microring Resonator Based Negative Permeability Metamaterial Sensor

    Directory of Open Access Journals (Sweden)

    Yao-Zhong Lan

    2011-08-01

    Full Text Available Metamaterials are artificial multifunctional materials that acquire their material properties from their structure, rather than inheriting them directly from the materials they are composed of, and they may provide novel tools to significantly enhance the sensitivity and resolution of sensors. In this paper, we derive the dispersion relation of a cylindrical dielectric waveguide loaded on a negative permeability metamaterial (NPM layer, and compute the resonant frequencies and electric field distribution of the corresponding Whispering-Gallery-Modes (WGMs. The theoretical resonant frequency and electric field distribution results are in good agreement with the full wave simulation results. We show that the NPM sensor based on a microring resonator possesses higher sensitivity than the traditional microring sensor since with the evanescent wave amplification and the increase of NPM layer thickness, the sensitivity will be greatly increased. This may open a door for designing sensors with specified sensitivity.

  2. Chip-integrated optical power limiter based on an all-passive micro-ring resonator

    Science.gov (United States)

    Yan, Siqi; Dong, Jianji; Zheng, Aoling; Zhang, Xinliang

    2014-10-01

    Recent progress in silicon nanophotonics has dramatically advanced the possible realization of large-scale on-chip optical interconnects integration. Adopting photons as information carriers can break the performance bottleneck of electronic integrated circuit such as serious thermal losses and poor process rates. However, in integrated photonics circuits, few reported work can impose an upper limit of optical power therefore prevent the optical device from harm caused by high power. In this study, we experimentally demonstrate a feasible integrated scheme based on a single all-passive micro-ring resonator to realize the optical power limitation which has a similar function of current limiting circuit in electronics. Besides, we analyze the performance of optical power limiter at various signal bit rates. The results show that the proposed device can limit the signal power effectively at a bit rate up to 20 Gbit/s without deteriorating the signal. Meanwhile, this ultra-compact silicon device can be completely compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may pave the way of very large scale integrated photonic circuits for all-optical information processors and artificial intelligence systems.

  3. A Microring Temperature Sensor Based on the Surface Plasmon Wave

    Directory of Open Access Journals (Sweden)

    Wenchao Li

    2015-01-01

    Full Text Available A structure of microring sensor suitable for temperature measurement based on the surface plasmon wave is put forward in this paper. The sensor uses surface plasmon multilayer waveguiding structure in the vertical direction and U-shaped microring structure in the horizontal direction and utilizes SOI as the thermal material. The transfer function derivation of the structure of surface plasmon microring sensor is according to the transfer matrix method. While the change of refractive index of Si is caused by the change of ambient temperature, the effective refractive index of the multilayer waveguiding structure is changed, resulting in the drifting of the sensor output spectrum. This paper focuses on the transmission characteristics of multilayer waveguide structure and the impact on the output spectrum caused by refractive index changes in temperature parts. According to the calculation and simulation, the transmission performance of the structure is stable and the sensitivity is good. The resonance wavelength shift can reach 0.007 μm when the temperature is increased by 100 k and FSR can reach about 60 nm. This structure achieves a high sensitivity in the temperature sense taking into account a wide range of filter frequency selections, providing a theoretical basis for the preparation of microoptics.

  4. Parity-time-symmetric coupled microring lasers operating around an exceptional point

    CERN Document Server

    Hodaei, Hossein; Hassan, Absar Ul; Hayenga, William; Heinrich, Matthias; Christodouldes, Demetri N; Khajavikhan, Mercedeh

    2015-01-01

    The behavior of a parity-time (PT) symmetric coupled microring system is studied when operating in the vicinity of an exceptional point. Using the abrupt phase transition around this point, stable single-mode lasing is demonstrated in spectrally multi-moded micro-ring arrangements.

  5. A microring multimode laser using hollow polymer optical fibre

    Indian Academy of Sciences (India)

    M Kailasnath; V P N Nampoori; P Radhakrishnan

    2010-11-01

    We report the observation of multimode laser operation at wavelengths corresponding to whispering-gallery modes from a freestanding microring cavity based on rhodamine B dye-doped PMMA hollow optical fibre. Cylindrical microcavities with diameters 155, 340 and 615 m were fabricated from a dye-doped hollow polymer optical fibre preform. An average mode spacing of 0.17 nm was observed for the 340 m cavity. This shows that the laser mode intensity distribution is concentrated on the outer edge of the cavity.

  6. Analytical solutions of coupled-mode equations for microring resonators

    Indian Academy of Sciences (India)

    ZHAO C Y

    2016-06-01

    We present a study on analytical solutions of coupled-mode equations for microring resonators with an emphasis on occurrence of all-optical EIT phenomenon, obtained by using a cofactor. As concrete examples, analytical solutions for a $3 \\times 3$ linearly distributed coupler and a circularly distributed coupler are obtained. The former corresponds to a non-degenerate eigenvalue problem and the latter corresponds to a degenerate eigenvalue problem. For comparison and without loss of generality, analytical solution for a $4 \\times 4$ linearly distributed coupler is also obtained. This paper may be of interest to optical physics and integrated photonics communities.

  7. $\\mathcal{PT}$-symmetric microring laser-absorber

    CERN Document Server

    Longhi, Stefano

    2014-01-01

    The lasing and coherent perfect absorption (CPA) properties of $\\mathcal{PT}$-symmetric microrings with mixed index and gain gratings, externally coupled to a bus waveguide, are theoretically investigated. For a complex grating at the $\\mathcal{PT}$ symmetry breaking point, perfect unidirectional (either clockwise or counterclockwise) laser emission can be realized, however the grating does not discriminate longitudinal modes and CPA can not be simultaneously achieved. Above the grating $\\mathcal{PT}$ symmetry breaking point, single mode emission and simultaneous CPA can be obtained, with unbalanced and controllable excitation of clockwise and counterclockwise modes in the ring.

  8. Spontaneous four-wave mixing in lossy microring resonators

    CERN Document Server

    Vernon, Z

    2015-01-01

    We develop a general Hamiltonian treatement of spontaneous four-wave mixing in a microring resonator side-coupled to a channel waveguide. The effect of scattering losses in the ring is included, as well as parasitic nonlinear effects including self- and cross-phase modulation. A procedure for computing the output of such a system for arbitrary parameters and pump states is presented. For the limit of weak pumping an expression for the joint spectral intensity of generated photon pairs, as well as the singles-to-coincidences ratio, is derived.

  9. Multiplexed detection of lectins using integrated glycan-coated microring resonators.

    Science.gov (United States)

    Ghasemi, Farshid; Hosseini, Ehsan Shah; Song, Xuezheng; Gottfried, David S; Chamanzar, Maysamreza; Raeiszadeh, Mehrsa; Cummings, Richard D; Eftekhar, Ali A; Adibi, Ali

    2016-06-15

    We present the systematic design, fabrication, and characterization of a multiplexed label-free lab-on-a-chip biosensor using silicon nitride (SiN) microring resonators. Sensor design is addressed through a systematic approach that enables optimizing the sensor according to the specific noise characteristics of the setup. We find that an optimal 6 dB undercoupled resonator consumes 40% less power in our platform to achieve the same limit-of-detection as the conventional designs using critically coupled resonators that have the maximum light-matter interaction. We lay out an optimization framework that enables the generalization of our method for any type of optical resonator and noise characteristics. The device is fabricated using a CMOS-compatible process, and an efficient swabbing lift-off technique is introduced for the deposition of the protective oxide layer. This technique increases the lift-off quality and yield compared to common lift-off methods based on agitation. The complete sensor system, including microfluidic flow cell and surface functionalization with glycan receptors, is tested for the multiplexed detection of Aleuria Aurantia Lectin (AAL) and Sambucus Nigra Lectin (SNA). Further analysis shows that the sensor limit of detection is 2 × 10(-6) RIU for bulk refractive index, 1 pg/mm(2) for surface-adsorbed mass, and ∼ 10 pM for the glycan/lectins studied here. PMID:26826877

  10. Silicon Modulators, Switches and Sub-systems for Optical Interconnect

    Science.gov (United States)

    Li, Qi

    Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented.

  11. Design and fabrication of InP micro-ring resonant detectors

    Institute of Scientific and Technical Information of China (English)

    辛海明; 黄永清; 陈海波; 黄辉; 任晓敏; 周星光

    2009-01-01

    The quantum efficiency and the transient response of the InP semiconductor micro-ring resonant detector are analyzed to get the optimum design parameters.Then the side coupling micro-ring resonant is fabricated using the InP semiconductor material based on the parameters.The micro-ring resonant cavity has the raius of 80 μm,waveguide width of 3 μm and the coupler gap of 1 μm.The test results show that the FSR is 0.75 nm,and the FWHM is 0.5 nm,which are consistent with the theoretical calculation results.

  12. Cascaded active silicon microresonator array cross-connect circuits for WDM networks-on-chip

    Science.gov (United States)

    Poon, Andrew W.; Xu, Fang; Luo, Xianshu

    2008-02-01

    We propose a design of an optical switch on a silicon chip comprising a 5 × 5 array of cascaded waveguide-crossing-coupled microring resonator-based switches for photonic networks-on-chip applications. We adopt our recently demonstrated design of multimode-interference (MMI)-based wire waveguide crossings, instead of conventional plain waveguide crossings, for the merits of low loss and low crosstalk. The microring resonator is integrated with a lateral p-i-n diode for carrier-injection-based GHz-speed on-off switching. All 25 microring resonators are assumed to be identical within a relatively wide resonance line width. The optical circuit switch can employ a single wavelength channel or multiple wavelength channels that are spaced by the microring resonator free spectral range. We analyze the potential performance of the proposed photonic network in terms of (i) light path cross-connections loss budget, and (ii) DC on-off power consumption for establishing a light path. As a proof-of-concept, our initial experiments on cascaded passive silicon MMI-crossing-coupled microring resonators demonstrate 3.6-Gbit/s non-return-to-zero data transmissions at on- and off-resonance wavelengths.

  13. 9.4 nm Tunable Vertically Coupled Microring Resonator Filter by Thermo-Optic Effect

    Institute of Scientific and Technical Information of China (English)

    Yuji Yanagase; Shunichi Yamagata; Yasuo Kokubun

    2003-01-01

    A wide range (9.4nm) tuning of vertically coupled microring resonator filter was demonstrated utilizing a large TO coefficient of polymer. The power consumption was about 60mW and no degradation of filter response was observed.

  14. UV trimming of polarization-independent microring resonator by internal stress and temperature control

    OpenAIRE

    Kobayashi, Naoki; Sato, Tomoyuki; Kobubun, Yasuo

    2010-01-01

    The temperature dependence of the resonant wavelength of vertically coupled microring resonator can be controlled via internal stress caused by the thermo-optic and photo-elastic effects. In the case of strong internal stress, a polarization-independent microring resonator can be realized by controlling the device surface temperature using a heater module; the temperature dependence of TE and TM polarizations are different due to the internal stress and thus manipulating temperatures, the res...

  15. Optimum design of a polymer electro-optic microring resonator switch

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Novel transfer functions are presented for a polymer electro-optic microring resonator switches. The resonating process of the light in the microring is simulated using the formulas. Then the optimization of the structural parameters is performed,and the characteristics are analyzed, such as the resonance time, output spectrum, operation voltage, insertion loss and crosstalk were analyzed. The simulation results show that the designed device exhibits favorable switching functions.

  16. Analyzing and tailoring spectra of arbitrary microring resonator arrays based on six transfer cellsand simulated annealing algorithm

    Institute of Scientific and Technical Information of China (English)

    Xiaobei Zhang; Yunhong Ding; Wei Hong; Xinliang Zhang; Dexiu Huang

    2009-01-01

    A simple approach based on six transfer cells and simulated annealing algorithm for analyzing and tailoring the spectra of arbitrary microring resonator arrays is presented.Coupling coefficients,ring sizes,and waveguide lengths of microring resonator arrays can be arbitrary in this approach.After developing this approach,several examples are demonstrated and optimized for various configurations of microring resonator arrays.Simulation results show that this approach is intuitive,efficient,and intelligent for applications based on microring resonator arrays.

  17. Silicon Photonics Research in Hong Kong: Microresonator Devices and Optical Nonlinearities

    Science.gov (United States)

    Poon, Andrew W.; Zhou, Linjie; Xu, Fang; Li, Chao; Chen, Hui; Liang, Tak-Keung; Liu, Yang; Tsang, Hon K.

    In this review paper we showcase recent activities on silicon photonics science and technology research in Hong Kong regarding two important topical areas-microresonator devices and optical nonlinearities. Our work on silicon microresonator filters, switches and modulators have shown promise for the nascent development of on-chip optoelectronic signal processing systems, while our studies on optical nonlinearities have contributed to basic understanding of silicon-based optically-pumped light sources and helium-implanted detectors. Here, we review our various passive and electro-optic active microresonator devices including (i) cascaded microring resonator cross-connect filters, (ii) NRZ-to-PRZ data format converters using a microring resonator notch filter, (iii) GHz-speed carrier-injection-based microring resonator modulators and 0.5-GHz-speed carrier-injection-based microdisk resonator modulators, and (iv) electrically reconfigurable microring resonator add-drop filters and electro-optic logic switches using interferometric resonance control. On the nonlinear waveguide front, we review the main nonlinear optical effects in silicon, and show that even at fairly modest average powers two-photon absorption and the accompanied free-carrier linear absorption could lead to optical limiting and a dramatic reduction in the effective lengths of nonlinear devices.

  18. Strongly driven nonlinear quantum optics in microring resonators

    CERN Document Server

    Vernon, Z

    2015-01-01

    We present a detailed analysis of strongly driven spontaneous four-wave mixing in a lossy integrated microring resonator side-coupled to a channel waveguide. A nonperturbative, analytic solution within the undepleted pump approximation is developed for a cw pump input of arbitrary intensity. In the strongly driven regime self- and cross-phase modulation, as well as multi-pair generation, lead to a rich variety of power-dependent effects; the results are markedly different than in the low power limit. The photon pair generation rate, single photon spectrum, and joint spectral intensity (JSI) distribution are calculated. Splitting of the generated single photon spectrum into a doublet structure associated with both pump detuning and cross-phase modulation is predicted, as well as substantial narrowing of the generated signal and idler bandwidths associated with the onset of optical parametric oscillation at intermediate powers. Both the correlated and uncorrelated contributions to the JSI are calculated, and fo...

  19. Time delay in double micro-ring resonator with grating

    Science.gov (United States)

    Li, Qiliang; Chen, Xin; Song, Junfeng; Bi, Meihua; Hu, Miao; Li, Shuqin

    2016-10-01

    In this paper, using the transfer matrix which is obtained by coupled mode theory, we have studied the transmission and time delay characteristics of the micro-ring resonator with the grating. We find that fast- and slow-light can occur in double ring resonator which contains the grating. We also study the effect of coupling coefficient on transmission characteristics. The results reveal that the increase of the coupling coefficient can lead to the change of the time delay at various ports at the resonant point. Thus by adjusting the frequency of the incident light and selecting the device with different coupling coefficient, we can realize the output of the fast and slow light.

  20. A highly efficient thermo-optic microring modulator assisted by graphene

    Science.gov (United States)

    Gan, Sheng; Cheng, Chuantong; Zhan, Yaohui; Huang, Beiju; Gan, Xuetao; Li, Shaojuan; Lin, Shenghuang; Li, Xiaofeng; Zhao, Jianlin; Chen, Hongda; Bao, Qiaoliang

    2015-11-01

    Graphene's remarkable electrical and optical properties afford great potential for constructing various optoelectronic devices, including modulators, photodetectors and pulse lasers. In particular, graphene-based optical modulators were demonstrated to be featured with a broadband response, small footprint, ultrafast speed and CMOS-compatibility, which may provide an alternative architecture for light-modulation in integrated photonic circuits. While on-chip graphene modulators have been studied in various structures, most of them are based on a capacitance-like configuration subjected to complicated fabrication processes and providing a low yield of working devices. Here, we experimentally demonstrate a new type of graphene modulator by employing graphene's electrical and thermal properties, which can be achieved with a simple fabrication flow. On a graphene-coated microring resonator with a small active area of 10 μm2, we have obtained an effective optical modulation via thermal energy electrically generated in a graphene layer. The resonant wavelength of the ring resonator shifts by 2.9 nm under an electrical power of 28 mW, which enables a large modulation depth of 7 dB and a broad operating wavelength range of 6.2 nm with 3 dB modulation. Due to the extremely high electrical and thermal conductivity in graphene, the graphene thermo-optical modulator operates at a very fast switching rate compared with the conventional silicon thermo-optic modulator, i.e. 10%-90% rise (90%-10% fall) time of 750 ns (800 ns). The results promise a novel architecture for massive on-chip modulation of optical interconnects compatible with CMOS technology.

  1. Athermalization in atomic force microscope based force spectroscopy using matched microstructure coupling

    OpenAIRE

    Torun, H.; Finkler, O.; Degertekin, F. L.

    2009-01-01

    The authors describe a method for athermalization in atomic force microscope (AFM) based force spectroscopy applications using microstructures that thermomechanically match the AFM probes. The method uses a setup where the AFM probe is coupled with the matched structure and the displacements of both structures are read out simultaneously. The matched structure displaces with the AFM probe as temperature changes, thus the force applied to the sample can be kept constant without the need for a ...

  2. Probing relevant ingredients in mean-field approaches for the athermal rheology of yield stress materials

    OpenAIRE

    Puosi, Francesco; Olivier, Julien,; Martens, Kirsten

    2015-01-01

    International audience Although the notion of mechanical noise is expected to play a key role in the non-linear rheology of athermally sheared amorphous systems, its characterization has so far remained elusive. Here, we show using molecular dynamic simulations that in spite of the presence of strong spatio-temporal correlations in the system, the local stress exhibits normal diffusion under the effect of the mechanical noise in the finite driving regime. The diffusion constant appears to ...

  3. Microring resonator-based optical router for photonic networks-on-chip

    Science.gov (United States)

    Zhihua, Yu; Qi, Zhang; Xin, Jin; Juan, Zhao; Hadi, Baghsiahi; Selviah, D. R.

    2016-07-01

    We report the design and analysis of a non-blocking microring resonator-based optical switched router, which can be used as a switch node to construct a large photonic routing network on chips. The proposed optical router has sixteen microrings, fourteen crossings and four 90° waveguide bends, which could be tuned through the thermo-optic (TO) or electro-optic (EO) effect. Compared with a previously described 5 × 5 optical switching router, our router comprises fewer microring resonators (MRRs), crossings and bends, which results in a more compact design, a higher switching speed, a lower loss and a lower optical power consumption. In addition, all the rings operate at the same wavelength making it scalable to a network of any size.

  4. Sensitivity and detection limit of dual-waveguide coupled microring resonator biosensors

    Institute of Scientific and Technical Information of China (English)

    Zhixuan Xia; Huaxiang Yi; Yao Chen; Zhiping Zhou

    2009-01-01

    We show that a linear relation exists between the device sensitivity and the quality (Q) factor of a dual-waveguide coupled microring resonator optical biosensor when the optimal conditions are satisfied. We also show that the detection limit depends on the loss coefficient and signal-to-nosie ratio (SNR) of the overall system, rather than the circumference of the ring. For a microring resonator sensor whose Q factor is 20000, the detection limit is found to be about 10-7 with 30-dB SNR, which is in good agreement with reported experimental data. These results indicate that loss reduction is the top priority in the design and fabrication of highly sensitive microring resonator optical biosensors.

  5. Integrated micro-plasmas in silicon operating in helium

    OpenAIRE

    Dussart, Remi; J. Overzet, Lawrence; Lefaucheux, P; Dufour, Thierry; Kulsreshath, M; Mandra, Monali; Tillocher, Thomas; Aubry, O; Dozias, S; Ranson, P; Goeckner, M

    2016-01-01

    International audience Microplasma arrays operating in helium in a DC regime have been produced in silicon microre-actors. Cathode boundary layer (CBL) type microdevices were elaborated using clean room facilities and semiconductor processing techniques. Ignition of the micro-discharge arrays having either 50 or 100 µm diameter cavities was studied. Two different structures (isotropically etched or anisotropically etched cavity) and various conditions (the two different voltage polarities,...

  6. Linearization of Mach-Zehnder modulator using microring-based all-pass filter

    Institute of Scientific and Technical Information of China (English)

    Jianyi Yang; Fan Wang; Xiaoqing Jiang; Hongchang Qu; Yaming Wu; Minghua Wang; Yuelin Wang

    2005-01-01

    @@ By applying the microring resonator to the Mach-Zehnder (MZ) optical modulator and employing the super-linear phase change characteristic of the all-pass filter, the sublinear modulation curve of the conventional MZ modulator is highly linearized. With properly controlled power coupling between the microring and the arm of the MZ modulator, the third-order distortion can be suppressed. If the transmission coefficient is set between 0.25 and 0.42, the linearity range larger than 90% can be easily achieved. The maximum linearity range is even up to 99.5%.

  7. Single mode lasing in transversely multi-moded PT-symmetric microring resonators

    CERN Document Server

    Hodaei, Hoseein; Hassan, Absar U; Hayenga, William E; Heinrich, Matthias; Christodoulides, Demetrios N; Khajavikhan, Mercedeh

    2016-01-01

    Single mode lasing is experimentally demonstrated in a transversely multi-moded InP-based semiconductor microring arrangement. In this system, mode discrimination is attained by judiciously utilizing the exceptional points in a parity-time (PT) symmetric double microring configuration. The proposed scheme is versatile, robust to small fabrication errors, and enables the device to operate in a stable manner considerably above threshold while maintaining spatial and spectral purity. The results presented here pave the way towards a new class of chip-scale semiconductor lasers that utilize gain/loss contrast as a primary mechanism for mode selection.

  8. 3D integrated hybrid silicon laser.

    Science.gov (United States)

    Song, Bowen; Stagarescu, Cristian; Ristic, Sasa; Behfar, Alex; Klamkin, Jonathan

    2016-05-16

    Lasers were realized on silicon by flip-chip bonding of indium phosphide (InP) devices containing total internal reflection turning mirrors for surface emission. Light is coupled to the silicon waveguides through surface grating couplers. With this technique, InP lasers were integrated on silicon. Laser cavities were also formed by coupling InP reflective semiconductor optical amplifiers to microring resonator filters and distributed Bragg reflector mirrors. Single-mode continuous wave lasing was demonstrated with a side mode suppression ratio of 30 dB. Up to 2 mW of optical power was coupled to the silicon waveguide. Thermal simulations were also performed to evaluate the low thermal impedance afforded by this architecture and potential for high wall-plug efficiency. PMID:27409867

  9. Silicon-based optoelectronic integrated circuit for label-free bio/chemical sensor.

    Science.gov (United States)

    Song, Junfeng; Luo, Xianshu; Kee, Jack Sheng; Han, Kyungsup; Li, Chao; Park, Mi Kyoung; Tu, Xiaoguang; Zhang, Huijuan; Fang, Qing; Jia, Lianxi; Yoon, Yong-Jin; Liow, Tsung-Yang; Yu, Mingbin; Lo, Guo-Qiang

    2013-07-29

    We demonstrate a silicon-based optoelectronic integrated circuit (OEIC) for label-free bio/chemical sensing application. Such on-chip OEIC sensor system consists of optical grating couplers for vertical light coupling into silicon waveguides, a thermal-tunable microring as a tunable filter, an exposed microring as an optical label-free sensor, and a Ge photodetector for a direct electrical readout. Different from the conventional wavelength-scanning method, we adopt low-cost broadband ASE light source, together with the on-chip tunable filter to generate sliced light source. The effective refractive index change of the sensing microring induced by the sensing target is traced by scanning the supplied electrical power applied onto the tracing microring, and the detected electrical signal is read out by the Ge photodetector. For bulk refractive index sensing, we demonstrate using such OEIC sensing system with a sensitivity of ~15 mW/RIU and a detection limit of 3.9 μ-RIU, while for surface sensing of biotin-streptavidin, we obtain a surface mass sensitivity of S(m) = ~192 µW/ng·mm(-2) and a surface detection limit of 0.3 pg/mm(2). The presented OEIC sensing system is suitable for point-of-care applications.

  10. Density scaling and quasiuniversality of flow-event statistics for athermal plastic flows

    DEFF Research Database (Denmark)

    Lerner, Edan; Bailey, Nicholas; Dyre, J. C.

    2014-01-01

    Athermal steady-state plastic flows were simulated for the Kob-Andersen binary Lennard-Jones system and its repulsive version in which the sign of the attractive terms is changed to a plus. Properties evaluated include the distributions of energy drops, stress drops, and strain intervals between...... the flow events. We show that simulations at a single density in conjunction with an equilibrium-liquid simulation at the same density allow one to predict the plastic flow-event statistics at other densities. This is done by applying the recently established “hidden scale invariance” of simple liquids...

  11. Subextensive Scaling in the Athermal, Quasistatic Limit of Amorphous Matter in Plastic Shear Flow

    Energy Technology Data Exchange (ETDEWEB)

    Maloney, C; Lemaitre, A

    2004-01-29

    We present the results of numerical simulations of an atomistic system undergoing plastic shear flow in the athermal, quasistatic limit. The system is shown to undergo cascades of local re-arrangements, associated with quadrupolar energy fluctuations, which induce system-spanning events organized into lines of slip oriented along the Bravais axes of the simulation cell. A finite size scaling analysis reveals subextensive scaling of the energy drops and participation numbers, linear in the length of the simulation cell, in good agreement with the real-space structure of plastic events

  12. Simulation and Analysis of a Metamaterial Sensor Based on a Microring Resonator

    Directory of Open Access Journals (Sweden)

    Yaozhong Lan

    2011-05-01

    Full Text Available Metamaterials are artificial media structured on a size scale smaller than the wavelength of external stimuli, that may provide novel tools to significantly enhance the sensitivity and resolution of the sensors. In this paper, we derive the dispersion relation of hollow cylindrical dielectric waveguide, and compute the resonant frequencies and Q factors of the corresponding Whispering-Gallery-Modes (WGM. A metamaterial sensor based on microring resonator operating in WGM is proposed, and the resonance intensity spectrum curves in the frequency range from 185 to 212 THz were studied under different sensing conditions. Full-wave simulations, considering the frequency shift sensitivity influenced by the change of core media permittivity, the thickness and permittivity of the adsorbed substance, prove that the sensitivity of the metamaterial sensor is more than 7 times that of the traditional microring resonator sensor, and the metamaterial layer loaded in the inner side of the microring doesn’t affect the high Q performance of the microring resonator.

  13. Low insertion loss SOI microring resonator integrated with nano-taper couplers

    DEFF Research Database (Denmark)

    Pu, Minhao; Frandsen, Lars Hagedorn; Ou, Haiyan;

    2009-01-01

    We demonstrate a microring resonator working at TM mode integrated with nano-taper couplers with 3.6dB total insertion loss. The measured insertion loss of the nano-taper coupler was only 1.3dB for TM mode....

  14. Optimization of driving signal for thermal modulation of a Microring Resonator

    NARCIS (Netherlands)

    Meijerink, R.; Geuzebroek, D.H.; Klein, E.J.; Kelderman, H.; Dekker, R.; Diemeer, M.B.J.; Driessen, A.; Ridder, de R.M.; Altena, G.; Dekker, R.

    2003-01-01

    The thermal modulation of a microring resonator with integrated chromium heater has been investigated. It is shown that the modulation speed can be enhanced by optimizing the driving signal, i.e. creating an overshoot and biasing the signal. Measurements at a modulation frequency of 500 Hz showed th

  15. Development of highly compact and low power consumption athermal military laser designators

    Science.gov (United States)

    Sijan, A.

    2012-10-01

    The utility of military lasers, particularly in the area of laser designation for laser-guided weapons, is well understood. Laser systems based on Nd:YAG have been fielded since the 1980's and over the last three decades have introduced incremental technology steps to improve performance and weight. The most recent technology step has been the introduction of athermal lasers based on laser-diode pumping of Nd:YAG and products are now emerging for use on the battlefield. The technical performance, efficiency, size, weight and power for these lasers, has been key to driving the new production designs. In this paper, we review the development of the laser designs and their introduction since the advent of laser designation. In particular, we compare the relative performance and characteristics over the evolution of fielded laser designators. Moreover, we will review the key building blocks for the design of athermal lasers and describe some critical design issues for engineering and productionisation of a military laser system, including removal of thermal lensing, novel diode-pumping schemes and robustness over the environment. These will be exemplified using results from the development of the SELEX Galileo Type 163 Laser Target Designators. These will cover not only technical performance, power and efficiency, but also thermal management, mass, volume, cost and overall complexity for manufacture.

  16. Resonance-enhanced waveguide-coupled silicon-germanium detector

    CERN Document Server

    Alloatti, Luca

    2016-01-01

    A photodiode with 0.55$\\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.

  17. Mössbauer studies on athermal martensite formation in an Fe–Ni–Mn alloy

    Indian Academy of Sciences (India)

    A Aydin; E Guler; H Aktas; H Gungunes

    2002-10-01

    In this study, austenite–martensite phase transformations which are formed by cooling effect in Fe–30% Ni–0.2% Mn alloy are investigated with Mössbauer spectroscopy and scanning electron microscopy. The single peak of the paramagnetic phase and the six peaks of the ferromagnetic phase of Fe–30% Ni–0.2% Mn alloy were observed in the Mössbauer spectrum. The internal magnetic field strength of ferromagnetic martensite phase was determined as 33.8 and the isomer shift values were determined as – 0.11 mm.sec–1 and – 0.06 mm.sec–1, respectively, for the austenite and martensite phases. In this alloy, athermal transformation was observed. The results obtained are in agreement with literature.

  18. Density scaling and quasiuniversality of flow-event statistics for athermal plastic flows.

    Science.gov (United States)

    Lerner, Edan; Bailey, Nicholas P; Dyre, Jeppe C

    2014-11-01

    Athermal steady-state plastic flows were simulated for the Kob-Andersen binary Lennard-Jones system and its repulsive version in which the sign of the attractive terms is changed to a plus. Properties evaluated include the distributions of energy drops, stress drops, and strain intervals between the flow events. We show that simulations at a single density in conjunction with an equilibrium-liquid simulation at the same density allow one to predict the plastic flow-event statistics at other densities. This is done by applying the recently established "hidden scale invariance" of simple liquids to the glass phase. The resulting scaling of flow-event properties reveals quasiuniversality, i.e., that the probability distributions of energy drops, stress drops, and strain intervals in properly reduced units are virtually independent of the microscopic pair potentials. PMID:25493793

  19. Understanding entangled polymers: What we can learn from athermal chain packings

    Science.gov (United States)

    Karayiannis, Nikos

    2012-02-01

    The study of random and ordered packings (from atoms and colloidal particles to sand grains) has been the focus of extensive research. This is not surprising since an understanding of the mechanisms that control morphology and packing is the key to the design and synthesis of novel ``smart'' materials and functionalities. In particular, the study of packings of chain molecules presents challenges but also insights which are absent in monatomic systems and further allows for a direction comparison with them. In this contribution we give an overview of our work on very dense and nearly jammed packings of athermal polymers. We show that chain molecules can be as efficiently and as densely packed as monatomic analogs up to the same maximally random jammed state. We also show that an exact correspondence can be established between the statistical-mechanical ensembles of packings of monatomic, and chain systems, which yields insights on the universality of jamming. By studying the effect of concentration on polymer size and on the underlying network of topological hindrances we precisely identify the distinct universal scaling regimes and the corresponding exponents. An unsuspected connection, valid from dilute up to very dense assemblies, is established between knots (of intermolecular origin) and entanglements (intermolecular constraints). We finally show that, against expectations, entropy-driven crystallization can occur in dense systems of athermal polymers once a critical volume fraction is reached. Such phase transition is driven by the increase in translational entropy: ordered sites exhibit enhanced mobility as their local free volume becomes more spherical and symmetric. Incipient nuclei develop well defined, stack-faulted layered crystal morphologies with a single stacking direction. The ordering transition and the resulting complex morphologies are analyzed, highlighting similarities and differences with respect to monatomic crystallization.

  20. Athermal Energy Loss from X-rays Deposited in Thin Superconducting Films on Solid Substrates

    Science.gov (United States)

    Kozorezov, Alexander G.; Lambert, Colin J.; Bandler, Simon R.; Balvin, Manuel A.; Busch, Sarah E.; Sagler, Peter N.; Porst, Jan-Patrick; Smith, Stephen J.; Stevenson, Thomas R.; Sadleir, John E.

    2013-01-01

    When energy is deposited in a thin-film cryogenic detector, such as from the absorption of an X-ray, an important feature that determines the energy resolution is the amount of athermal energy that can be lost to the heat bath prior to the elementary excitation systems coming into thermal equilibrium. This form of energy loss will be position-dependent and therefore can limit the detector energy resolution. An understanding of the physical processes that occur when elementary excitations are generated in metal films on dielectric substrates is important for the design and optimization of a number of different types of low temperature detector. We have measured the total energy loss in one relatively simple geometry that allows us to study these processes and compare measurements with calculation based upon a model for the various di.erent processes. We have modeled the athermal phonon energy loss in this device by finding an evolving phonon distribution function that solves the system of kinetic equations for the interacting system of electrons and phonons. Using measurements of device parameters such as the Debye energy and the thermal di.usivity we have calculated the expected energy loss from this detector geometry, and also the position-dependent variation of this loss. We have also calculated the predicted impact on measured spectral line-shapes, and shown that they agree well with measurements. In addition, we have tested this model by using it to predict the performance of a number of other types of detector with di.erent geometries, where good agreement is also found.

  1. Resonance-spacing tuning over whole free spectral range in a single microring resonator

    Science.gov (United States)

    Gao, Ge; Yuan, Shuai; Li, Danping; Xia, Jinsong

    2016-03-01

    In this paper, we present a single microring resonator structure formed by incorporating a reflectivity-tunable loop mirror for the tuning of resonance spacing. Based on the optical mode-splitting in the resonator structure, spacing between two adjacent resonances can be tuned from zero to one whole free spectral range (FSR) by controlling the coupling strength between the two counter-propagating degenerate modes in the microring resonator. In experiment, by integrating metallic microheater, the resonance-spacing tuning over the whole FSR (1.17 nm) is achieved within 9.82 mW heating power dissipation. The device is expected to have potential applications in reconfigurable optical filtering and microwave photonics.

  2. A Proposal and Demonstration for Photonic Generation of a Microwave Signal by Incorporating a Microring Resonator

    Institute of Scientific and Technical Information of China (English)

    CHEN Guo-Jie; HUANG De-Xiu; ZHANG Xin-Liang; CAO Hui; CHEN Wei-Cheng

    2009-01-01

    A proposal for photonic generation of a microwave signal is presented by employing a dual wavelength erbiumdoped fibre ring laser.In the laser,a microring resonator is cascaded with a tunable bandpass filter to serve as a dual-wavelength selector,an unpumped polarization maintaining erbium-doped fibre is used as a saturable absorber.By replacing the microring resonator with a delay inter[erometer to verify the proposal,a wavelengthtunable dual wavelength single longitudinal mode laser is demonstrated,and a microwave signal at 10.01 GHz with a linewidth of less than 25 kHz is obtained by beating the two wavelengths at a photodetector.

  3. Optical Microring Resonators based on ion-implanted LiNbO3 ridge waveguides

    OpenAIRE

    Montanari, Giovanni Battista

    2010-01-01

    The growing interest for Integrated Optics for sensing, telecommunications and even electronics is driving research to find solutions to the new challenges issued by a more and more fast, connected and smart world. This thesis deals with the design, the fabrication and the characterisation of the first prototypes of Microring Resonators realised using ion implanted Lithium Niobate (LiNbO3) ridge waveguides. Optical Resonator is one among the most important devices for all tasks describ...

  4. Negative coupling and coupling phase dispersion in a silicon quadrupole micro-racetrack resonator.

    Science.gov (United States)

    Bachman, Daniel; Tsay, Alan; Van, Vien

    2015-07-27

    We report the first experimental study of the effects of coupling phase dispersion on the spectral response of a two-dimensionally coupled quadrupole micro-racetrack resonator. Negative coupling in the system is observed to manifest itself in the sharp stop band transition and deep extinction in the pseudo-elliptic filter response of the quadrupole. The results demonstrate the feasibility of realizing advanced silicon microring devices based on the 2D coupling topology with general complex coupling coefficients.

  5. The Electromechanical Behavior of a Micro-Ring Driven by Traveling Electrostatic Force

    Directory of Open Access Journals (Sweden)

    Kuo-Yi Huang

    2012-01-01

    Full Text Available There is no literature mentioning the electromechanical behavior of micro structures driven by traveling electrostatic forces. This article is thus the first to present the dynamics and stabilities of a micro-ring subjected to a traveling electrostatic force. The traveling electrostatic force may be induced by sequentially actuated electrodes which are arranged around the flexible micro-ring. The analysis is based on a linearized distributed model considering the electromechanical coupling effects between electrostatic force and structure. The micro-ring will resonate when the traveling speeds of the electrostatic force approach some critical speeds. The critical speeds are equal to the ratio of the natural frequencies to the wave number of the correlative natural mode of the ring. Apart from resonance, the ring may be unstable at some unstable traveling speeds. The unstable regions appear not only near the critical speeds, but also near some fractions of some critical speeds differences. Furthermore the unstable regions expand with increasing driving voltage. This article may lead to a new research branch on electrostatic-driven micro devices.

  6. Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Zhu, Xiaolong; Xiao, Sanshui;

    2015-01-01

    Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of the Fermi level enables electro-optical modula...... with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage....

  7. Generation of a 640 Gbit/s NRZ OTDM signal using a silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Hu, Hao; Galili, Michael;

    2011-01-01

    A 640 Gbit/s NRZ OTDM signal has been successfully generated for the first time by format conversion of a 640 Gbit/s OTDM signal from RZ to NRZ. First, a coherent 640 Gbit/s OTDM RZ signal is generated by wavelength conversion of the original incoherent OTDM signal utilizing Kerr switching in a...... than both the original incoherent 640 Gbit/s and the wavelength converted coherent 640 Gbit/s RZ OTDM signals has been obtained. Bit error ratio measurements show error free (...

  8. Bandwidth and wavelength-tunable optical bandpass filter based on silicon microring-MZI structure

    DEFF Research Database (Denmark)

    Ding, Yunhong; Pu, Minhao; Liu, Liu;

    2011-01-01

    tunability. A detailed analysis and the design of the device are presented. The shape factor and extinction ratio of the filter are optimized by thermally controlling the phase difference between the two arms of the MZI. Simultaneous bandwidth and wavelength tunability with in-band ripple control...

  9. Silicon Photonic Devices for Optical Computing

    Science.gov (United States)

    Qiu, Ciyuan

    The requirement for high performance computer will be significantly increased by the fast development of the internet. However, traditional CMOS computer will meet its bottleneck due to the miniaturization problem. Optical computer comes to be the leading candidate to solve this issue. Silicon photonic technology has tremendous developments and thus it becomes an ideal platform to implement optical computing system. In Chapter 1, I will first show the development of the optical computing and silicon photonic technology. I will also discuss some key nonlinear optical effects of silicon photonic devices. Based on the current silicon photonic technology, I will then make a brief introduction on the optical direct logic for the 2D optical computing and spatial light modulator for the 3D optical computing, both of which will be discussed in detail in the followed chapters. In Chapter 2, I will discuss micro-ring resonator which is the key element of optical directed logic circuit discussed in Chapter 3. I will give the analytical model based on photonic circuit to explain the performance of the micro-ring resonator. The group delay and the loss of the micro-ring resonator will be analyzed. And I will also show the active tuning of the transmission spectrum by using the nonlinear effect of silicon. In Chapter 3, I will show a revised optical direct-logic (DL) circuit for 2D optical computer that is well suited for complementary metal-oxide-semiconductor (CMOS)-compatible silicon photonics. It can significantly reduce the latency compared with traditional CMOS computers. For proof of concept, I demonstrated a scalable and reconfigurable optical directed-logic architecture consisting of a regular array of micro-ring resonator based optical on-off switches. The switches are controlled by electrical input logic signals through embedded p-i-n junctions. The circuit can be reconfigured to perform any 2x2 combinational logic operations by thermally tuning the operation modes of

  10. Theory for the dynamics of dense systems of athermal self-propelled particles

    Science.gov (United States)

    Szamel, Grzegorz

    2016-01-01

    We present a derivation of a recently proposed theory for the time dependence of density fluctuations in stationary states of strongly interacting, athermal, self-propelled particles. The derivation consists of two steps. First, we start from the equation of motion for the joint distribution of particles' positions and self-propulsions and we integrate out the self-propulsions. In this way we derive an approximate, many-particle evolution equation for the probability distribution of the particles' positions. Second, we use this evolution equation to describe the time dependence of steady-state density correlations. We derive a memory function representation of the density correlation function and then we use a factorization approximation to obtain an approximate expression for the memory function. In the final equation of motion for the density correlation function the nonequilibrium character of the active system manifests itself through the presence of a new steady-state correlation function that quantifies spatial correlations of the velocities of the particles. This correlation function enters into the frequency term, and thus it describes the dependence of the short-time dynamics on the properties of the self-propulsions. More importantly, the correlation function of particles' velocities enters into the vertex of the memory function and through the vertex it modifies the long-time glassy dynamics.

  11. Boundary-induced segregation in nanoscale thin films of athermal polymer blends.

    Science.gov (United States)

    Teng, Chih-Yu; Sheng, Yu-Jane; Tsao, Heng-Kwong

    2016-05-18

    The surface segregation of binary athermal polymer blends confined in a nanoscale thin film was investigated by dissipative particle dynamics. The polymer blend included linear/linear, star/linear, bottlebrush/linear, and rod-like/linear polymer systems. The segregation was driven by purely entropic effects and two different mechanisms were found. For the linear/linear and star/linear polymer blends, the smaller sized polymers were preferentially segregated to the boundary because their excluded volumes were smaller than those of the matrix polymers. For the bottlebrush/linear and rod-like/linear polymer blends, the polymers with a larger persistent length were preferentially segregated to the boundary because they favored staying in the depletion zone by alignment with the wall. Our simulation outcome was consistent with experimental results and also agreed with theoretical predictions - that is, a surface excess dictated by the chain ends for the branch/linear system. These consequences are of great importance in controlling the homogeneity and surface properties of polymer blend thin films. PMID:27108653

  12. Cross-Split of Dislocations: An Athermal and Rapid Plasticity Mechanism

    Science.gov (United States)

    Kositski, Roman; Kovalenko, Oleg; Lee, Seok-Woo; Greer, Julia R.; Rabkin, Eugen; Mordehai, Dan

    2016-05-01

    The pathways by which dislocations, line defects within the lattice structure, overcome microstructural obstacles represent a key aspect in understanding the main mechanisms that control mechanical properties of ductile crystalline materials. While edge dislocations were believed to change their glide plane only by a slow, non-conservative, thermally activated motion, we suggest the existence of a rapid conservative athermal mechanism, by which the arrested edge dislocations split into two other edge dislocations that glide on two different crystallographic planes. This discovered mechanism, for which we coined a term “cross-split of edge dislocations”, is a unique and collective phenomenon, which is triggered by an interaction with another same-sign pre-existing edge dislocation. This mechanism is demonstrated for faceted α-Fe nanoparticles under compression, in which we propose that cross-split of arrested edge dislocations is resulting in a strain burst. The cross-split mechanism provides an efficient pathway for edge dislocations to overcome planar obstacles.

  13. Tunable frequency combs based on dual microring resonators

    CERN Document Server

    Miller, Steven A; Ramelow, Sven; Luke, Kevin; Dutt, Avik; Farsi, Alessandro; Gaeta, Alexander L; Lipson, Michal

    2015-01-01

    In order to achieve efficient parametric frequency comb generation in microresonators, external control of coupling between the cavity and the bus waveguide is necessary. However, for passive monolithically integrated structures, the coupling gap is fixed and cannot be externally controlled, making tuning the coupling inherently challenging. We design a dual-cavity coupled microresonator structure in which tuning one ring resonance frequency induces a change in the overall cavity coupling condition. We demonstrate wide extinction tunability with high efficiency by engineering the ring coupling conditions. Additionally, we note a distinct dispersion tunability resulting from coupling two cavities of slightly different path lengths, and present a new method of modal dispersion engineering. Our fabricated devices consist of two coupled high quality factor silicon nitride microresonators, where the extinction ratio of the resonances can be controlled using integrated microheaters. Using this extinction tunability...

  14. Novel architecture for ultra-stable micro-ring resonator based optical frequency combs

    CERN Document Server

    Pasquazi, Alessia; Peccianti, Marco; Clerici, Matteo; Ferrera, Marcello; Razzari, Luca; Duchesne, David; Little, Brent E; Chu, Sai T; Moss, David J; Morandotti, Roberto

    2014-01-01

    We report a novel geometry for OPOs based on nonlinear microcavity resonators. This approach relies on a self-locked scheme that enables OPO emission without the need for thermal locking of the pump laser to the microcavity resonance. By exploiting a CMOS-compatible microring resonator, we achieve oscillation with a complete absence of shutting down, or self-terminating behavior, a very common occurrence in externally pumped OPOs. Further, this scheme consistently produces very wide bandwidth (>300nm, limited by our experimental set-up) combs that oscillate at a spacing of the FSR of the micro cavity resonance.

  15. Transport properties of photonic topological insulators based on microring resonator array

    CERN Document Server

    Jiang, Xiaohui; Yin, Chenxuan; Zhang, Yanfeng; Chen, Hui; Yu, Siyuan

    2016-01-01

    An array of ring resonators specifically designed can perform as a topological insulator. We conduct simulations using both Tight-Binding Model (TBM) and Transfer Matrix Method (TMM) to analyze the transport properties of such optical structure, verifying the presence of robust topological edge states which is immune to disorder and defect. We have also made a comparison between these two methods, of which results suggesting that TBM is only applicable under weakly-coupling condition while TMM is more rigorous. Finally we compared the structure with common microring array and coupled resonator optical waveguide (CROW) to demonstrate that it has desired transmission properties with wide and flat spectral response.

  16. Deterministic single soliton generation and compression in microring resonators avoiding the chaotic region

    CERN Document Server

    Jaramillo-Villegas, Jose A; Wang, Pei-Hsun; Leaird, Daniel E; Weiner, Andrew M

    2015-01-01

    A path within the parameter space of phase detuning and pump power is demonstrated in order to obtain a single cavity soliton (CS) with certainty in SiN microring resonators in the anomalous dispersion regime. Once the single CS state is reached, it is possible to continue a path to compress it, broadening the corresponding single FSR frequency Kerr comb. This behavior is first obtained by identifying the regions in the parameter space via numerical simulations of the Lugiato-Lefever equation (LLE), and second, defining a path from the stable modulation instability (SMI) region to the stable cavity solitons (SCS) region avoiding the chaotic and unstable regions.

  17. Analysis and design of box-like filters based on 3×2 microring resonator arrays

    Science.gov (United States)

    Zhang, Xiaobei; Zhang, Xinliang; Huang, Dexiu

    2009-11-01

    This paper theoretically investigates spectral characteristics of the 3×2 microring resonator array, with its analytical model developed firstly. Simulation results show that the case of the ring-bus coupling coefficient smaller than the ringring coupling coefficient is suitable for box-like filters. After design principles are given, the optimization process are carried out by evaluating the side lobe rejection ratio, the passband ripple rejection ratio and the roll-off coefficient of the passband edge. The FWHM of the designed box-like filter can be adjustable in a flexible range.

  18. Ultra-low power generation of twin photons in a compact silicon ring resonator

    CERN Document Server

    Azzini, Stefano; Strain, Michael J; Sorel, Marc; Helt, L G; Sipe, J E; Liscidini, Marco; Galli, Matteo; Bajoni, Daniele

    2012-01-01

    We demonstrate efficient generation of correlated photon pairs by spontaneous four wave mixing in a 5 \\mu m radius silicon ring resonator in the telecom band around 1550 nm. By optically pumping our device with a 200 \\mu W continuous wave laser, we obtain a pair generation rate of 0.2 MHz and demonstrate photon time correlations with a coincidence-to-accidental ratio as high as 250. The results are in good agreement with theoretical predictions and show the potential of silicon micro-ring resonators as room temperature sources for integrated quantum optics applications.

  19. Quantum dot SOA/silicon external cavity multi-wavelength laser.

    Science.gov (United States)

    Zhang, Yi; Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr-Jones, Thomas; Hochberg, Michael

    2015-02-23

    We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission. PMID:25836504

  20. Fast and efficient silicon thermo-optic switching based on reverse breakdown of pn junction.

    Science.gov (United States)

    Li, Xianyao; Xu, Hao; Xiao, Xi; Li, Zhiyong; Yu, Yude; Yu, Jinzhong

    2014-02-15

    We propose and demonstrate a fast and efficient silicon thermo-optic switch based on reverse breakdown of the pn junction. Benefiting from the direct heating of silicon waveguide by embedding the pn junction into the waveguide center, fast switching with on/off time of 330 and 450 ns and efficient thermal tuning of 0.12  nm/mW for a 20 μm radius microring resonator are achieved, indicating a high figure of merit of only 8.8  mW·μs. The results here show great potential for application in the future optical interconnects.

  1. Thermoelastic damping effect of the micro-ring resonator with irregular mass and stiffness

    Science.gov (United States)

    Kim, Jung-Hwan; Kim, Ji-Hwan

    2016-05-01

    Fundamentally, vibration characteristic is a main factor for the stability of structures. In this regard, the irregularity of mass and stiffness distributions for the structure have been an interesting issue for many years. Recently, the Micro Electro Mechanical Systems (MEMS) are developed for various applications such as gyro sensors. In the present work, in-plane vibration of micro-ring structure with multiple finite-sized imperfections is investigated. Then, the unbalance of the structure is represented using Heaviside Step Function for the inextensional modeling of the ring. Also, thermoelastic damping (TED) due to internal friction is studied based on Fourier's one-dimensional heat conduction equation using Laplace Transform. To obtain the quality-factors (Q-factors) for imperfect micro-ring, analytical solutions are calculated from governing equations of motion with TED. And then, the natural frequencies and the Q-factors are observed to separate into lower and higher modes. Additionally, the vibration mode shapes are presented, and the frequency trimming concept due to attached imperfections is investigated.

  2. Threshold for permanent refractive index change in crystalline silicon by femtosecond laser irradiation

    Science.gov (United States)

    Bachman, D.; Chen, Z.; Fedosejevs, R.; Tsui, Y. Y.; Van, V.

    2016-08-01

    An optical damage threshold for crystalline silicon from single femtosecond laser pulses was determined by detecting a permanent change in the refractive index of the material. This index change could be detected with unprecedented sensitivity by measuring the resonant wavelength shift of silicon integrated optics microring resonators irradiated with femtosecond laser pulses at 400 nm and 800 nm wavelengths. The threshold for permanent index change at 400 nm wavelength was determined to be 0.053 ± 0.007 J/cm2, which agrees with previously reported threshold values for femtosecond laser modification of crystalline silicon. However, the threshold for index change at 800 nm wavelength was found to be 0.044 ± 0.005 J/cm2, which is five times lower than the previously reported threshold values for visual change on the silicon surface. The discrepancy is attributed to possible modification of the crystallinity of silicon below the melting temperature that has not been detected before.

  3. Annihilation behaviour under electron irradiation of athermal ω-phase crystals formed by cooling at 131K in a β-Ti-Mo alloy

    International Nuclear Information System (INIS)

    Formation of athermal ω-phase crystals due to cooling to 131 K has been directly observed in a β-type Ti-15mass%Mo alloy. The athermal ω-phase crystals easily disappear by electron irradiation during the in-situ observation at 131 K. Incubation phenomenon of the annihilation is also recognized. The annihilation behaviour was investigated based on the dependence on electron irradiation conditions and incubation phenomena. It is concluded that the annihilation mechanism is concerned with interactive effects of temperature rise due to electron irradiation and collective oscillation resulted from inelastic scattering of electron beam.

  4. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  5. Local strain evolution due to athermal γ→ε martensitic transformation in biomedical CoCrMo alloys.

    Science.gov (United States)

    Yamanaka, Kenta; Mori, Manami; Koizumi, Yuichiro; Chiba, Akihiko

    2014-04-01

    Locally developed strains caused by athermal γ face-centered cubic (fcc)→ε hexagonal close-packed (hcp) martensitic transformation were investigated for the γ matrix of Ni-free Co-29Cr-6Mo (wt%) alloys prepared with or without added nitrogen. Electron-backscatter-diffraction-(EBSD)-based strain analysis revealed that in addition to ε-martensite interiors, the N-free alloy that had a duplex microstructure consisting of the γ matrix and athermal ε-martensite plates showed larger magnitudes of both elastic and plastic strains in the γ phase matrix than the N-doped counterpart that did not have a ε-martensite phase. Transmission electron microscopy (TEM) results indicated that the ε-martensite microplates were aggregates of thin ε-layers, which were formed by three different {111}γ〈112¯〉γ Shockley partial dislocations in accordance with a previously proposed mechanism (Putaux and Chevalier, 1996) that canceled the shear strains of the individual variants. The plastic strains are believed to have originated from the martensitic transformation itself, and the activity of dislocations is believed to be the origin of the transformation. We have revealed that the elastic strains in the γ matrix originate from interactions among the ε-martensite phase, extended dislocations, and/or thin ε-layers. The dislocations highly dissociated into stacking faults, making stress relaxation at intersections difficult and further introducing local strain evolution.

  6. Freestanding membrane composed of micro-ring array with ultrahigh sidewall aspect ratio for application in lightweight cathode arrays

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lanlan [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Liu, Hongzhong, E-mail: hzliu@mail.xjtu.edu.cn [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Jiang, Weitao, E-mail: wtjiang@mail.xjtu.edu.cn [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Gao, Wei [Key Laboratory of Mechanics on Western Disasters and Environment, Lanzhou University, Lanzhou 730000 (China); Chen, Bangdao [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Li, Xin [Department of Microelectronics, Xi’an Jiaotong University, Xi’an 710049 (China); Ding, Yucheng [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); An, Ningli [Department of Packaging Engineering, Xi’an University of Technology, Xi’an 710048 (China)

    2014-12-15

    Graphical abstract: A freestanding multilayer ultrathin nano-membrane (FUN-membrane) with a micro-ring array (MRA), in which the dimension of each micro-ring is 3 μm in diameter, 2 μm in height and sub-100 nm in sidewall thickness is successfully fabricated, as shown in the SEM image of figure (a). Due to the MRA with ultrahigh aspect ratio of dielectric-metal sidewall, the FUN-membrane can be transferred to either rigid or flexible substrate to be used as the cathode for lightweight display panel, as shown in the schematic of figure (b). - Highlights: • Exploring a new fabrication method for the freestanding ultrathin nano-membrane (FUN-membrane). • FUN-membrane is composed of micro-ring array with ultrahigh aspect ratio of the insulator-metal sidewall. • The sharp metal edge of each micro-ring is preferred to be served as the micro-emitter. - Abstract: A freestanding multilayer ultrathin nano-membrane (FUN-membrane) with a micro-ring array (MRA) is successfully fabricated through the controllable film deposition. Each micro-ring of FUN-membrane is 3 μm in diameter, 2 μm in height and sub-100 nm in sidewall thickness, demonstrating an ultrahigh sidewall aspect ratio of 20:1. In our strategy, a silica layer (200 nm in thickness), a chromium transition layer (5 nm-thick) and a gold layer (40 nm-thick), were in sequence deposited on patterned photoresist. After removal of the photoresist by lift-off process, a FUN-membrane with MRA was peeled off from the substrate, where the gold layer acted as a protecting layer to prevent the MRA from fracture. The FUN-membrane was then transferred to a flexible polycarbonate (PC) sheet coated with indium tin oxide (ITO) layer, which was then used as a flexible and lightweight cathode. Remarkably, the field emission effect of the fabricated FUN-membrane cathode performs a high field-enhancement factor of 1.2 × 10{sup 4} and a low turn-on voltage of 2 V/μm, indicating the advantages of the sharp metal edge of MRA. Due

  7. Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities

    Science.gov (United States)

    Azzini, Stefano; Grassani, Davide; Galli, Matteo; Gerace, Dario; Patrini, Maddalena; Liscidini, Marco; Velha, Philippe; Bajoni, Daniele

    2013-07-01

    We report on four-wave mixing in coupled photonic crystal nano-cavities on a silicon-on-insulator platform. Three photonic wire cavities are side-coupled to obtain three modes equally separated in energy. The structure is designed to be self-filtering, and we show that the pump is rejected by almost two orders of magnitude. We study both the stimulated and the spontaneous four-wave mixing processes: owing to the small modal volume, we find that signal and idler photons are generated with a hundred-fold increase in efficiency as compared to silicon micro-ring resonators.

  8. Bending efficiency analysis of horizontal single- and multiple-slot waveguide microrings

    Institute of Scientific and Technical Information of China (English)

    Alireza Kargar

    2011-01-01

    @@ The bending efficiencies of three-dimensional (3D) horizontal single- and multiple-slot waveguide microrings are analyzed using the effective index and modified transfer matrix methods.The effects of waveguide parameters, low-index material,high-index material, asymmetric structure, and asymmetric slots on the bending loss are studied.The results show that the bending efficiency can be enhanced by applying asymmetric structures and asymmetric slots.In addition, it is demonstrated that the bending loss increases with the increase of the number of slots.However, by using proper thicknesses for different high-index layers of the horizontal multiple-slot waveguide, it is possile that the horizontal multiple-slot waveguide can provide a lower bending loss than the single-slot one.

  9. A high sensitivity humidity sensor based on micro-ring resonator with three coupling points

    Science.gov (United States)

    Guo, Shi-liang; Wang, Wen-juan; Hu, Chun-hai

    2014-12-01

    A novel high sensitivity humidity sensor based on micro-ring resonator with three coupling points (MRRTCP) is reported. Since the dielectric constant of Polyimide is highly sensible to the relative humidity of the environment, we choose the Polyimide (PI) as the moisture material. The effective refractive index of the sensing part of the sensor changes as the relative humidity of the environment changes, this leading to an obvious shift of the output spectrum. The sensing range of the relative humidity sensor is 0~100%RH, and the sensitivity is 0.0017μm/%RH, and the structure is relatively simple and could be used in micro-scale humidity sensing.

  10. A study on refractive index sensors based on optical micro-ring resonators

    CERN Document Server

    Tsigaridas, Georgios N

    2015-01-01

    In this work the behavior of optical micro-ring resonators, especially when functioning as refractive index sensors, is studied in detail. Two configurations are considered, namely a linear waveguide coupled to a circular one and two linear waveguides coupled to each other through a circular one. The optimum coupling conditions are derived and it is shown that in both cases the condition for the resonant wavelength, i.e. the wavelength at which the transmission spectrum exhibits a dip (peak), is the same and depends only on the geometrical characteristics of the circular waveguide and the effective refractive index of the propagating mode. The latter, as well as the corresponding mode profile, can be easily calculated through numerical analysis. The sensitivity of the sensor is defined based on the dependence of the effective refractive index on the refractive index of the environment. Using a result of waveguide perturbation theory, the geometrical characteristics of the core of the circular waveguide that m...

  11. All-fibre micro-ring resonator based on tapered microfibre

    Institute of Scientific and Technical Information of China (English)

    Dong Xiao-Wei; Lu Shao-Hua; Feng Su-Chun; Xu Ou; Jian Shui-Sheng

    2008-01-01

    In this paper, bendloss characteristics of an optical fibre are investigated in detail, and the results show that the resonator with a smaller ring radius, wider free spectrum range (FSR), higher fineness (f) and quality-factor (Q) can be achieved by using microfibres. Based on the improved fused taper technique, a high-quality microfibre with 5 μm radius has been fabricated, and an all-fibre micro-ring resonator with a radius of only 500 μm is realized using self-coiling coupling method. The good-resonant characteristic makes the all-fibre device be expected to avoid bendloss and connection loss associated with planar waveguide integration.

  12. Broadband tunable microwave photonic phase shifter with low RF power variation in a high-Q AlN microring.

    Science.gov (United States)

    Liu, Xianwen; Sun, Changzheng; Xiong, Bing; Wang, Jian; Wang, Lai; Han, Yanjun; Hao, Zhibiao; Li, Hongtao; Luo, Yi; Yan, Jianchang; Wei, Tong Bo; Zhang, Yun; Wang, Junxi

    2016-08-01

    An all-optically tunable microwave photonic phase shifter is demonstrated based on an epitaxial aluminum nitride (AlN) microring with an intrinsic quality factor of 3.2×106. The microring adopts a pedestal structure, which allows overcoupling with 700 nm gap size and facilitates the fabrication process. A phase shift for broadband signals from 4 to 25 GHz is demonstrated by employing the thermo-optic effect and the separate carrier tuning technique. A phase tuning range of 0°-332° is recorded with a 3 dB radio frequency (RF) power variation and 48 mW optical power consumption. In addition, AlN exhibits intrinsic second-order optical nonlinearity. Thus, our work presents a novel platform with a low propagation loss and the capability of electro-optic modulation for applications in integrated microwave photonics. PMID:27472628

  13. An optic fiber sensor for multiple gases based on fiber loop ring-down spectroscopy and microring resonator arrays

    Science.gov (United States)

    Zhang, Xin; Jian, Jia-wen; Zheng, Yan-gong; Jin, Han; Zou, Jie

    2016-07-01

    A high-sensitivity sensor for multiple gases based on microring array filter and fiber loop ring-down spectroscopy system is proposed and demonstrated. The parameters of the resonators are designed so that the filtered signal from a broadband light source can be tuned with an absorption spectral line of gas. Therefore, through adding microring resonators horizontally and vertically, the number of target gases and filter range are increased. In this research, in the broad spectral range of about 0.9 μm, only the absorption spectral lines of target gases are filtered. The simulation results show that three target gases, CH4, CO2 and HF, can be simultaneously detected by the sensing system. Owing to the fiber loop ring-down spectroscopy, the whole system is optimized in mini-size and sensitivity, and we can choose different sensing methods to enhance the measurement accuracy for high and low concentration conditions.

  14. In-resonator variation of waveguide cross-sections for dispersion control of aluminum nitride micro-rings

    CERN Document Server

    Jung, Hojoong; Tang, Hong X

    2015-01-01

    We propose and demonstrate a dispersion control technique by combination of different waveguide cross sections in an aluminum nitride micro-ring resonator. Narrow and wide waveguides with normal and anomalous dispersion, respectively, are linked with tapering waveguides and enclosed in a ring resonator to produce a total dispersion near zero. The mode-coupling in multimoded waveguides is also effectively suppressed. This technique provides new degrees of freedom and enhanced flexibility in engineering the dispersion of microcomb resonators.

  15. Athermal distributed Brillouin sensors utilizing all-glass optical fibers fabricated from rare earth garnets: LuAG

    Science.gov (United States)

    Dragic, P. D.; Pamato, M. G.; Iordache, V.; Bass, J. D.; Kucera, C. J.; Jones, M.; Hawkins, T. W.; Ballato, J.

    2016-01-01

    An all-glass optical fiber derived from single-crystal LuAG is investigated for its potential use in athermal Brillouin distributed strain sensors. Such sensor systems are comprised of fiber whose Brillouin frequency shift is independent of temperature, but not independent of strain. Bulk Brillouin spectroscopy measurements on the precursor LuAG crystal are performed to gain insight into the crystal-to-glass transition. Results suggest that both the mass density and acoustic velocity are reduced relative to the crystal phase, in common with the other rare earth aluminosilicates. Advantages of the LuAG derived fiber over other rare earth garnet-derived fibers for the sensing application are a stronger strain response and larger Brilloun gain with narrower Brillouin spectral width.

  16. Silicone metalization

    Science.gov (United States)

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  17. Add-drop filters based on asymmetric high-order microring resonators

    Science.gov (United States)

    Zhang, Dong; Huang, Yongqing; Ren, Xiaomin; Duan, Xiaofeng; Shen, Bing; Wang, Qi; Zhang, Xia; Cai, Shiwei

    2012-11-01

    Add/drop filters are key components of Wavelength Division Multiplexing (WDM) communication systems. Free spectral range(FSR) is a key parameter for Add/drop filters, the FSR should operate within the entire C-band (1530-1562nm).And flat-top drop-port response with a sharp rolloff is also import, Flatness of the passband, sharp roll-off from passband to stop band are necessary to minimize the pulse broadening and the packing efficiency of wavelength channels. In this paper, we proposed an asymmetric approach to design high-order microring filters, The aim is to achieve large extension ratios and adequate suppression of the spurious interstitial mode, meanwhile, flat-top and steep-side response in filter could be obtained by this approach. Our simulation results showed an extended FSR of 40nm, reducing the interstitial peak suppression from 5dB to 35dB and a boxlike filter response with sharpe factor(SF) of 0.68. And a quality-factor of 2961 and a 3-dB bandwidth of 0.52nm is achieved.

  18. Calculation of light delay for coupled microrings by FDTD technique and Padé approximation.

    Science.gov (United States)

    Huang, Yong-Zhen; Yang, Yue-De

    2009-11-01

    The Padé approximation with Baker's algorithm is compared with the least-squares Prony method and the generalized pencil-of-functions (GPOF) method for calculating mode frequencies and mode Q factors for coupled optical microdisks by FDTD technique. Comparisons of intensity spectra and the corresponding mode frequencies and Q factors show that the Padé approximation can yield more stable results than the Prony and the GPOF methods, especially the intensity spectrum. The results of the Prony method and the GPOF method are greatly influenced by the selected number of resonant modes, which need to be optimized during the data processing, in addition to the length of the time response signal. Furthermore, the Padé approximation is applied to calculate light delay for embedded microring resonators from complex transmission spectra obtained by the Padé approximation from a FDTD output. The Prony and the GPOF methods cannot be applied to calculate the transmission spectra, because the transmission signal obtained by the FDTD simulation cannot be expressed as a sum of damped complex exponentials.

  19. Comments on the interpretation of differential scanning calorimetry results for thermoelastic martensitic transformations: Athermal versus thermally activated kinetics

    International Nuclear Information System (INIS)

    In a previous article Van Humbeeck and Planes have made a number of criticisms of the authors' recent paper concerning the interpretation of the results obtained by Differential Scanning Calorimetry (DSC) from the Martensitic Transformation of Cu-Al-Ni-Mn-B alloys. Although the martensitic transformation of these shape memory alloys is generally classified as athermal, it has been confirmed that the capacity of the alloys to undergo a more complete thermoelastic transformation (i.e. better reversibility of the transformation) increased with the Mn content. This behavior has been explained by interpreting the DSC results obtained during thermal cycling in terms of a thermally activated mechanism controlling the direct and reverse transformations. When the heating rate increases during the reverse transformation the DSC curves shift towards higher temperatures while they shift towards the lower temperatures when the cooling rate was increased during the direct transformation. Since the starting transformation temperatures (As, Ms) do not shift, Van Humbeeck and Planes state that there is no real peak shift and assume that the DCS experiments were carried out without taking into account the thermal lag effect between sample and cell. On the following line they deduce a time constant, τ, of 60 seconds because the peak maximum shifts. In fact the assumption made by Van Humbeeck and Planes is false

  20. 基于微环谐振器的超紧凑微波光子滤波器的设计%Design of ultra-compact microwave photonic filter based on SOI microring resonators

    Institute of Scientific and Technical Information of China (English)

    王巍; 张爱华; 杨铿; 杨丽君; 冯世娟; 王振

    2013-01-01

    设计了一个基于硅基微环的超紧凑的微波光子滤波器,用以提高硅基微波光子器件的集成密度及增大其自由光谱范围。根据波导光学的耦合模理论,推导出双环并联谐振器的光强传递函数,并通过仿真得到了微波光子滤波器的输出特性。结果表明:当微环半径为0.79μm时,谐振器中直波导宽度为0.3μm,环形波导宽度为0.25μm,滤波器的自由光谱范围为140 nm,插入损耗为0.5 dB,半峰全宽为7 nm,此滤波器的性能完全满足粗波分复用系统的要求。%The ultra-compact microwave photonic filter based on silicon-on-insulator microring resonator was designed to increase the integration density of microwave photonic devices and enlarge the free spectral range. According to the coupled mode theory of waveguide optics, the optical intensity transfer function of the microring resonator with parallel-coupled structure was deduced and the transmission spectrums were simulated numerically. The results show that when the radius of resonator of resonator is 0.79μm, the straight waveguide width is 0.3μm and the ring waveguide width is 0.25μm, the filter with full wave at half maximum (FWHM) of 7 nm can be achieved, which also has an exceeding free spectral rang 140 nmof and an insertion loss less of 0.5 dB. The performance of this filter can meet the requirements of coarse wavelength division multiplexing system.

  1. A micrometer-scale integrated silicon source of time-energy entangled photons

    CERN Document Server

    Grassani, Davide; Liscidini, Marco; Galli, Matteo; Strain, Michael J; Sorel, Marc; Sipe, J E; Bajoni, Daniele

    2014-01-01

    Entanglement is a fundamental resource in quantum information processing. Several studies have explored the integration of sources of entangled states on a silicon chip but the sources demonstrated so far require millimeter lengths and pump powers of the order of hundreds of mWs to produce an appreciable photon flux, hindering their scalability and dense integration. Microring resonators have been shown to be efficient sources of photon pairs, but entangled state emission has never been demonstrated. Here we report the first demonstration of a microring resonator capable of emitting time-energy entangled photons. We use a Franson experiment to show a violation of Bell's inequality by as much as 11 standard deviations. The source is integrated on a silicon chip, operates at sub-mW pump power, emits in the telecom band with a pair generation rate exceeding 10$^7$ Hz per $nm$, and outputs into a photonic waveguide. These are all essential features of an entangled states emitter for a quantum photonic networks.

  2. Integrated micro-plasmas in silicon operating in helium

    CERN Document Server

    Dussart, Remi; Lefaucheux, P; Dufour, Thierry; Kulsreshath, M; Mandra, Monali; Tillocher, Thomas; Aubry, O; Dozias, S; Ranson, P; Goeckner, M

    2016-01-01

    Microplasma arrays operating in helium in a DC regime have been produced in silicon microre-actors. Cathode boundary layer (CBL) type microdevices were elaborated using clean room facilities and semiconductor processing techniques. Ignition of the micro-discharge arrays having either 50 or 100 m diameter cavities was studied. Two different structures (isotropically etched or anisotropically etched cavity) and various conditions (the two different voltage polarities, pressures etc.) were investigated. 100 microdis-charges of 50 m diameter could be ignited in parallel at 1000 torr. At high current, some parasitic and transient sparks appeared at the edge of the sample. When the polarization was reversed (cathode side corresponding the opened electrode), more current was needed to light all the microdischarges. A thermally affected zone around the hole on the anode side was obtained after operation.

  3. On the Influence of Athermal ω and α Phase Instabilities on the Scale of Precipitation of the α Phase in Metastable β-Ti Alloys

    Science.gov (United States)

    Zheng, Yufeng; Sosa, John M.; Fraser, Hamish L.

    2016-05-01

    In the presentation and manuscript in the International Conference on Solid-Solid Phase Transformations in Inorganic Materials (PTM 2015 conference), the authors presented the preliminary results showing that the nano-scale compositional and structural instabilities in the parent β phase in titanium alloys have significant influence on the subsequent phase transformations, such as α phase precipitation, by a combination of advanced electron microscopy and phase field simulation. The aim of the current research described in this paper has been to develop an understanding of the role of two instabilities in metastable β Ti alloys which may influence the scale of refined distributions of the α phase. The first of these involves the role of athermal ω phase on the nucleation of the α phase, and the second is the stability of the α phase itself during up-quenching experiments performed as a part of heat-treatment schedules that lead to refined distributions of this phase. The first investigation has involved heat treatments designed to ensure that the athermal ω phase is present at a temperature at which α nucleation is known, from previous research, to occur. It was found that the scale of α precipitation produced was "refined", rather than "super-refined". Hence, it is concluded that athermal ω plays no role in the nucleation of the α phase. The second investigation involves up-quenching of samples already containing an incipient "super-refined" distribution of the α phase to determine the stability of these distributions against such up-quenching. It has been found that the stability of the α phase is dependent on the composition, C 0( T), i.e., the alloy composition where, for a given temperature, T, the free energies of the α and β phases are equal.

  4. Silicon detectors

    International Nuclear Information System (INIS)

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  5. A highly scalable fully non-blocking silicon photonic switch fabric

    CERN Document Server

    Nikolova, Dessislava; Liu, Yang; Rumley, Sebastien; Novack, Ari; Baehr-Jones, Tom; Hochberg, Michael; Bergman, Keren

    2016-01-01

    Large port count spatial optical switches will facilitate flexible and energy efficient data movement in future data communications systems, especially if they are capable of nanosecond-order reconfiguration times. In this work, we demonstrate an 8x8 microring-based silicon photonic switch with software controlled switching. The proposed switch architecture is modular as it assembles multiple identical components with multiplexing/demultiplexing functionalities. The switch is fully non-blocking, has path independent insertion loss, low crosstalk and is straightforward to control. A scalability analysis shows that this architecture can scale to very large port counts. This work represents the first demonstration of real-time firmware controlled switching with silicon photonics devices integrated at the chip scale.

  6. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    CERN Document Server

    Xiong, Chi; Ryu, Kevin K; Schuck, Carsten; Fong, King Y; Palacios, Tomas; Tang, Hong X

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of \\{chi}(2) enabled sum-/difference-frequency processes.

  7. Hybrid laser integration for silicon photonics platform

    Science.gov (United States)

    Yang, Shuyu

    Silicon photonics has attracted extensive attention in both academia and industry in recent years, as an enabling technology to address the exponentially increasing demands for communication bandwidth. It brings state-of-the-art complementary metal-oxide-semiconductor (CMOS) processing technology to the field of photonic integration. The high yield and uniformity of silicon devices make it possible to build complex photonic systems-on-chip in large production volumes. Cutting-edge device performance has been demonstrated on this platform, including high-speed modulators, photodetectors, and passive devices such as the Y-junction, waveguide crossing, and arrayed waveguide gratings. As the device library quickly matures, an integrated laser source for a transmitter remains missing from the design kit. I demonstrated hybrid external cavity lasers by integrating reflective optical semiconductor amplifiers and silicon photonics chips. The gain chip and silicon chip can be designed and optimized independently, which is a significant advantage compared to bonding an III-V film on top of the silicon chip. Advanced optoelectronics packaging processes can be leveraged for chip alignment. Tunable C-Band (near 1550 nm) lasers with 10 mW on-chip power and less than 220 kHz bandwidth are demonstrated. O-Band lasers (operating near 1310 nm) as well as successful data transmission at 10 Gb/s and 40 Gb/s using the hybrid laser as the light source are also demonstrated. I designed a single cavity, multi wavelength laser by utilizing a quantum dot SOA, Sagnac loop and micro-ring based silicon photonics half cavity. Four lasing peaks with less than 3 dB power non-uniformity were measured, as well as 4 x 10 Gb/s error free data transmission. In addition to my main focus on RSOA/Silicon external cavity lasers, I propose and demonstrate a novel germanium-assisted grating coupler with low loss on-and-off chip fiber coupling. A coupling efficiency of 76% at 1.55 microm and 40 nm 1 d

  8. Green, red and IR frequency comb line generation from single IR pump in AlN microring resonator

    CERN Document Server

    Jung, Hojoong; Guo, Xiang; Fischer, Debra; Tang, Hong X

    2014-01-01

    On-chip frequency comb generations enable compact broadband sources for spectroscopic sensing and precision spectroscopy. Recent microcomb studies focus on infrared spectral regime and have difficulty in accessing visible regime. Here, we demonstrate comb-like visible frequency line generation through second, third harmonic, and sum frequency conversion of a Kerr comb within a high Q aluminum nitride microring resonator pumped by a single telecom laser. The strong power enhancement, in conjunction with the unique combination of Pockels and Kerr optical nonlinearity of aluminum nitride, leads to cascaded frequency conversions in the visible spectrum. High-resolution spectroscopic study of the visible frequency lines indicates matched free spectrum range over all the bands. This frequency doubling and tripling effect in a single microcomb structure offers great potential for comb spectroscopy and self-referencing comb.

  9. Silicon Photonic Devices and Their Applications

    Science.gov (United States)

    Li, Ying

    Silicon photonics is the study and application of photonic systems, which use silicon as an optical medium. Data is transferred in the systems by optical rays. This technology is seen as the substitutions of electric computer chips in the future and the means to keep tack on the Moore's law. Cavity optomechanics is a rising field of silicon photonics. It focuses on the interaction between light and mechanical objects. Although it is currently at its early stage of growth, this field has attracted rising attention. Here, we present highly sensitive optical detection of acceleration using an optomechanical accelerometer. The core part of this accelerometer is a slot-type photonic crystal cavity with strong optomechanical interactions. We first discuss theoretically the optomechanical coupling in the air-slot mode-gap photonic crystal cavity. The dispersive coupling gom is numerically calculated. Dynamical parametric oscillations for both cooling and amplification, in the resolved and unresolved sideband limit, are examined numerically, along with the displacement spectral density and cooling rates for the various operating parameters. Experimental results also demonstrated that the cavity has a large optomechanical coupling rate. The optically induced spring effect, damping and amplification of the mechanical modes are observed with measurements both in air and in vacuum. Then, we propose and demonstrate our optomechanical accelerometer. It can operate with a resolution of 730 ng/Hz1/2 (or equivalently 40.1 aN/Hz1/2) and with a transduction bandwidth of ≈ 85 kHz. We also demonstrate an integrated photonics device, an on-chip spectroscopy, in the last part of this thesis. This new type of on-chip microspectrometer is based on the Vernier effect of two cascaded micro-ring cavities. It can measure optical spectrum with a bandwidth of 74nm and a resolution of 0.22 nm in a small footprint of 1.5 mm2.

  10. Silicon photonic device for wavelength sensing and monitoring

    Science.gov (United States)

    Vargas Lopez, German R.

    Over the last decade advances and innovations from Silicon Photonics technology were observed in the telecommunications and computing industries. This technology which employs Silicon as an optical medium, relies on current CMOS micro-electronics fabrication processes to enable medium scale integration of many nano-photonic devices to produce photonic integrated circuitry. However, other fields of research such as optical sensor processing can benefit from silicon photonics technology, specially in sensors where the physical measurement is wavelength encoded. In this research work, we present a design and application of a thermally tuned silicon photonic device as an optical sensor interrogator. The main device is a micro-ring resonator filter of 10 mum of diameter. A photonic design toolkit was developed based on open source software from the research community. With those tools it was possible to estimate the resonance and spectral characteristics of the filter. From the obtained design parameters, a 7.8 x 3.8 mm optical chip was fabricated using standard micro-photonics techniques. In order to tune a ring resonance, Nichrome micro-heaters were fabricated on top of the device. Some fabricated devices were systematically characterized and their tuning response were determined. From measurements, a ring resonator with a free-spectral-range of 18.4 nm and with a bandwidth of 0.14 nm was obtained. Using just 5 mA it was possible to tune the device resonance up to 3 nm. In order to apply our device as a sensor interrogator in this research, a model of wavelength estimation using time interval between peaks measurement technique was developed and simulations were carried out to assess its performance. To test the technique, an experiment using a Fiber Bragg grating optical sensor was set, and estimations of the wavelength shift of this sensor due to axial strains yield an error within 22 pm compared to measurements from spectrum analyzer. Results from this study

  11. Sensing platform based on micro-ring resonator and on-chip reference sensors in SOI

    NARCIS (Netherlands)

    Chakkalakkal Abdulla, S.M.C.; Boer, B.M. de; Pozo Torres, J.M.; Berg, J.H. van den; Abutan, A.E.; Hagen, R.A.J.; Lo Cascio, D.M.R.; Harmsma, P.J.

    2014-01-01

    This article presents work on a Silicon-On-Insulator (SOI) compact sensing platform based on Micro Ring Resonators (MRRs). In order to enable correction for variations in environmental conditions (temperature, mechanical stress etc), a study has been performed on the performance of uncoated sensing

  12. Athermal laser launch telescopes

    OpenAIRE

    Kamphues, F.G.; Henselmans, R.; Rijnveld, N.; Lemmen, M.H.J.; Doelman, N.J.; Nijkerk, M.D.

    2011-01-01

    ESO has developed a concept for a compact laser guide star unit for use in future Adaptive Optics (AO) systems. A small powerful laser is combined with a telescope that launches the beam, creating a single modular unit that can be mounted directly on a large telescope. This approach solves several of the stability problems experienced with a number of first generation laser guide star systems around the world. Four of these compact laser guide stars will be used for the new VLT 4LGSF Adaptive...

  13. Athermal laser launch telescopes

    NARCIS (Netherlands)

    Kamphues, F.G.; Henselmans, R.; Rijnveld, N.; Lemmen, M.H.J.; Doelman, N.J.; Nijkerk, M.D.

    2011-01-01

    ESO has developed a concept for a compact laser guide star unit for use in future Adaptive Optics (AO) systems. A small powerful laser is combined with a telescope that launches the beam, creating a single modular unit that can be mounted directly on a large telescope. This approach solves several o

  14. Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing.

    Science.gov (United States)

    Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo

    2014-07-22

    Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

  15. Influence of the aspect ratio and boundary conditions on universal finite-size scaling functions in the athermal metastable two-dimensional random field Ising model.

    Science.gov (United States)

    Navas-Portella, Víctor; Vives, Eduard

    2016-02-01

    This work studies universal finite size scaling functions for the number of one-dimensional spanning avalanches in a two-dimensional (2D) disordered system with boundary conditions of different nature and different aspect ratios. To this end, we will consider the 2D random field Ising model at T=0 driven by the external field H with athermal dynamics implemented with periodic and forced boundary conditions. We have chosen a convenient scaling variable z that accounts for the deformation of the distance to the critical point caused by the aspect ratio. In addition, assuming that the dependence of the finite size scaling functions on the aspect ratio can be accounted for by an additional multiplicative factor, we have been able to collapse data for different system sizes, different aspect ratios, and different types of the boundary conditions into a single scaling function Q̂. PMID:26986310

  16. Isothermal and athermal type martensitic transformations in yttria doped zirconia%添加Y2O3的ZrO2的等温和变温马氏体相变

    Institute of Scientific and Technical Information of China (English)

    早川元造

    2005-01-01

    The phase transformation from the high temperature tetragonal phase to the low temperature monoclinic phase of zirconia had been long considered to be a typical athermal martensitic transformation until it was recently identified to be a fast isothermal transformation. The isothermal nature becomes more apparent when a stabilizing oxide, such as yttria, is doped, by which the transformation temperature is reduced and accordingly the transformation rate becomes low.Thus it becomes easy to experimentally establish a C-curve nature in a TTT (Time-Temperature-Transformation) diagram. The C-curve approaches that of well known isothermal transformation of Y-TZP (Yttria Doped Tetragonal Zirconia Polycrystals), which typically contains 3mol% of Y2O3.In principle, an isothermal transformation can be suppressed by a rapid cooling so that the cooling curve avoids intersecting the C-curve in TTT diagram. Y-TZP is the case, where the stability of the metastable tetragonal phase is relatively high and thus the tetragonal phase persists even at the liquid nitrogen temperature. On the other hand, the high temperature tetragonal phase of pure zirconia can never be quenched-in at room temperature by a rapid cooling; instead it always turns into monoclinic phase at room temperature. This suggests the occurrence of an athermal transformation after escaping the isothermal transformation, provided the cooling rate was fast enough to suppress the isothermal transformation. Thus, with an intermediate yttria composition, it would be possible to obtain the tetragonal phase which is not only metastable at room temperature but athermally transforms into the monoclinic phase by subzero cooling.The objective of the present work is to show that, with a certain range of yttria content, the tetragonal phase can be quenched in at room temperature and undergoes isothermal transformation and athermal transformation depending on being heated at a moderate temperature or under-cooled below room

  17. On-chip multi spectral frequency standard replication by stabilizing a microring resonator to a molecular line

    Science.gov (United States)

    Zektzer, Roy; Stern, Liron; Mazurski, Noa; Levy, Uriel

    2016-07-01

    Stabilized laser lines are highly desired for myriad of applications ranging from precise measurements to optical communications. While stabilization can be obtained by using molecular or atomic absorption references, these are limited to specific frequencies. On the other hand, resonators can be used as wide band frequency references. Unfortunately, such resonators are unstable and inaccurate. Here, we propose and experimentally demonstrate a chip-scale multispectral frequency standard replication operating in the spectral range of the near IR. This is obtained by frequency locking a microring resonator (MRR) to an acetylene absorption line. The MRR consists of a Si3N4 waveguides with microheater on top of it. The thermo-optic effect is utilized to lock one of the MRR resonances to an acetylene line. This locked MRR is then used to stabilize other laser sources at 980 nm and 1550 nm wavelength. By beating the stabilized laser to another stabilized laser, we obtained frequency instability floor of 4 ×10-9 at around 100 s in terms of Allan deviation. Such stable and accurate chip scale sources are expected to serve as important building block in diverse fields such as communication and metrology.

  18. Optimisation Design of Coupling Region Based on SOI Micro-Ring Resonator

    Directory of Open Access Journals (Sweden)

    Shubin Yan

    2014-12-01

    Full Text Available Design optimization of the coupling region is conducted in order to solve the difficulty of achieving a higher quality factor (Q for large size resonators based on silicon-on-insulator (SOI. Relations among coupling length, coupling ratio and quality factor of the optical cavities are theoretically analyzed. Resonators (R = 100 μm with different coupling styles, concentric, straight, and butterfly, are prepared by the micro-electro-mechanical-systems (MEMS process. Coupling experimental results show that micro-cavity of butterfly-coupled style obtains the narrowest (3 dB bandwidth, and the quality factor has been greatly improved. The results provide the foundation for realization of a large size, high-Q resonator, and its development and application in the integrated optical gyroscopes, filters, sensors, and other related fields.

  19. Étude d’un système hybride pile à combustible / microturbine dans un contexte microréseau rural isolé

    OpenAIRE

    Baudoin, Sylvain

    2015-01-01

    Les milieux ruraux, souvent distants du réseau électrique principal, sont particulièrement adaptés au déploiement de microréseaux (MR). Ce type de réseau permet une restructuration du réseau électrique d’aujourd’hui afin d'intégrer plus efficacement un plus grand nombre des sources d’énergie renouvelable. Le biogaz,obtenu par la méthanisation des déchets agricoles, est une ressource d’énergie renouvelable disponible dans les zones rurales. Cette ressource, facilement stockable en grande quant...

  20. Desarrollo de un sistema SCADA basado en Labview para la gestión de una microrred energética

    OpenAIRE

    Muñoz Santos, María

    2011-01-01

    Este proyecto se enmarca dentro de un proyecto mayor basado en el desarrollo de una microrred eléctrica en el departamento de Ingeniería Eléctrica y Electrónica de la UPNA. Ese proyecto tiene como finalidad diseñar microrredes eléctricas en las que se implementen estrategias de control para lograr la optimización de sus elementos añadiéndoles nuevas funcionalidades, garantizando el suministro eléctrico de las cargas en funcionamiento aislado, atenuando las perturbaciones introd...

  1. Design and Fabrication of Polarization-Independent Micro-Ring Resonators

    Institute of Scientific and Technical Information of China (English)

    GENG Min-Ming; JIA Lian-Xi; ZHANG Lei; LIU Yu-Liang; YANG Lin; LI Fang

    2008-01-01

    @@ Origin of polarization sensitivity of photonic wire waveguides (PWWs) is analysed and the effective refractive indices of two different polarization states are calculated by the three-dimensional fall-vector beam propagation method. We find that PWWs are polarization insensitive if the distribution of its refractive index is uniform and the cross section is square. An MRR based on such a polarization-insensitive PWW is fabricated on an S-inch silicon-on-insulator wafer using 248-nm deep ultraviolet lithography and reactive ion etching. The quasi-TE mode is resonant at 1542.25nm and 1558.90nm, and the quasi-TM mode is resonant at 1542.12nm and 1558.94 nm.The corresponding polarization shift is 0.13 nm at the shorter wavelength and 0.04 nm at the longer wavelength.Thus the fabricated device is polarization independent. The extinction ratio is larger than lOdB. The 3dB bandwidth is about 2.5nm and the Qvalue is about 620 at 1558.90nm.

  2. Silicon Spintronics

    NARCIS (Netherlands)

    Jansen, R.

    2008-01-01

    Integration of magnetism and mainstream semiconductor electronics could impact information technology in ways beyond imagination. A pivotal step is implementation of spin-based electronic functionality in silicon devices. Remarkable progress made during the last two years gives confidence that this

  3. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  4. A wavelength tunable ONU transmitter based on multi-mode Fabry-Perot laser and micro-ring resonator for bandwidth symmetric TWDM-PON

    Science.gov (United States)

    Gao, Zhensen; Sun, Xiao; Zhang, Kaibin

    2016-02-01

    Wavelength tunable optical transmitter is an essential component for the newly standardized time and wavelength division multiplexed passive optical network (TWDM-PON), where tunable ONU with 10Gb/s bit rate is desired to provide 40Gb/s symmetric bandwidth. In this paper, a novel wavelength tunable optical transmitter is proposed by reusing legacy low speed multi-mode Fabry-Perot laser and connecting it with an integrated photonic chip with two coupled micro-ring resonators to generate a tunable single mode signal based on Vernier effect for 10Gb/s high speed modulation, which makes it as a promising solution for colorless ONU in future symmetric TWDM-PON.

  5. Programación y reprogramación energética de una micro-red aislada en una estrategia de control por horizonte deslizante

    OpenAIRE

    Marietta Sciara, Pablo Martín

    2014-01-01

    Premi al millor Projecte de Fi de Carrera presentat durant l'any 2014 en l'àmbit d'Optimització de Recursos que atorga DOW CHEMICAL IBÉRICA En este proyecto se propone el diseño y construcción de un software para el control energético de una micro-red eléctrica que opera de forma aislada de la red de distribución principal. El software propuesto se integra físicamente a un Sistema Centralizado de Gestión de la Energía (SCGE) desde el cual se administra la generación y la demanda energética...

  6. Silicone chain extender

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a silicone chain extender, more particularly a chain extender for silicone polymers and copolymers, to a chain extended silicone polymer or copolymer and to a functionalized chain extended silicone polymer or copolymer, to a method for the preparation thereof and...

  7. Optically Active Organic Microrings

    DEFF Research Database (Denmark)

    Balzer, Frank; Beermann, J.; Bozhevolnyi, S.I.;

    2003-01-01

    -hexaphenyl molecules are generated on mica surfaces, possessing narrow size distributions with mean diameters of a few micrometers, wall widths of 100 to 200 nm, and wall heights of several hundred nanometers. Polarized linear and nonlinear optics reveals that the rings are made up of radially o...

  8. Black luminescent silicon

    Energy Technology Data Exchange (ETDEWEB)

    Pezoldt, Joerg [FG Nanotechnologie, Institut fuer Mikro- und Nanotechnologie, TU Ilmenau, Postfach 100565, 98684 Ilmenau (Germany); Kups, Thomas [FG Werkstoffe der Elektrotechnik, Institut fuer Mikro- und Nanotechnologien, TU Ilmenau, Postfach 1005765, 98684 Ilmenau (Germany); Stubenrauch, Mike [FG Mikromechanische Systeme, Institut fuer Mikro- und Nanotechnologien, TU Ilmenau, Postfach 1005765, 98684 Ilmenau (Germany); Fischer, Michael [FG Elektroniktechnologie, Institut fuer Mikro- und Nanotechnologien, TU Ilmenau, Postfach 1005765, 98684 Ilmenau (Germany)

    2011-03-15

    Black silicon is a fascinating multipurpose modification of bulk silicon which can be fabricated in a selforganized structure formation process during dry etching of bare silicon wafer leading to the formation of a high density of silicon needles. The smallest dimension of the tips approaches values between 1 and 2 nm. The silicon nanostructure exhibits an extremely low diffuse reflectivity. The nanosized tips and their coating with fluorine doped nonstoichiometric silicon dioxide are responsible for cathodoluminescence in the blue-green and red regions of the visible spectra (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. 长波红外景象模拟器投影光学系统无热化设计%Athermalization for Projection Optical System of Long-Wave Infrared Scene Simulator

    Institute of Scientific and Technical Information of China (English)

    李全勇; 李向天; 康玉思; 牟达

    2013-01-01

    The infrared scene simulator based on DMD provides the advanced means for the performance testing and evaluation of the infrared system. According to the working principle of DMD, the general scheme of infrared scene simulator is determined, that the illumination system is connected to projection system with the dichroic prism. The aberration properties and optical design and athermal design method of the projection optical system are discussed. A projection optical system is designed, which working waveband is 8~12μm long wave infrared band, F # is 2.8, the field of view is 3°. The projection system was athermalized by optical passive athermal design method at -40-60 ℃. The design result indicates that the optical transfer functions are close to the diffraction limit in the required temperature range, the image quality meet the design requirements, and the system has the characteristics with small loss radiation energy, high resolution and compact structure.%基于数字微镜器件(digital micromirror device,DMD)的红外景象模拟器能够为红外系统性能测试与评估提供先进的手段。根据 DMD 的工作原理,确定了以分光棱镜来连接照明系统和投影系统的红外景象模拟器总体方案。探讨了红外景象模拟器投影光学系统的像差特性、光学设计和无热化的设计方法,设计了一套工作在长波红外8~12μm,F#为2.8,视场角为3°的投影光学系统,并对该系统在−40~60℃之间进行光学被动式无热化设计。结果表明:该系统在所要求的温度范围内,光学传递函数均接近衍射极限,成像质量满足系统的设计要求,并具有辐射能量损失小、分辨率高、结构紧凑等特点。

  10. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  11. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    2001-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible luminescenc

  12. Improved models for the prediction of activity coefficients in nearly athermal mixtures .2. A theoretically-based G(E)-model based on the van der Waals partition function

    DEFF Research Database (Denmark)

    Kontogeorgis, Georgios; Georgios, Nikolopoulos; Fredenslund, Aage;

    1997-01-01

    of the generalized van der Waals partition function and attempts to account for all non-energetic effects of solutions of both short- and long-chain alkanes, including alkane polymers. Both the free-volume effects and the density-dependent rotational degrees of freedom are considered. The resulting G(E)-model which......, despite its derivation from a partition function resembles the Flory-Huggins formula, is suitable for vapor-liquid and solid-liquid equilibrium calculations for nearly athermal polymer solutions as well as for alkane systems. We show that using plausible assumptions for the free-volume and the external......-degree-of-freedom parameter, very good predictions are obtained for activity coefficients of asymmetric alkane systems at both concentration ends, for solid-liquid equilibrium calculations, as well as in extreme cases (polymer solutions, activity coefficients of heavy model alkane polymers in short-chain compounds recently...

  13. Enhanced light-vapor interactions and all optical switching in a chip scale micro-ring resonator coupled with atomic vapor

    CERN Document Server

    Stern, Liron; Mazurski, Noa; Levy, Uriel

    2016-01-01

    The coupling of atomic and photonic resonances serves as an important tool for enhancing light-matter interactions and enables the observation of multitude of fascinating and fundamental phenomena. Here, by exploiting the platform of atomic-cladding wave guides, we experimentally demonstrate the resonant coupling of rubidium vapor and an atomic cladding micro ring resonator. Specifically, we observed cavity-atom coupling in the form of Fano resonances having a distinct dependency on the relative frequency detuning between the photonic and the atomic resonances. Moreover, we were able to significantly enhance the efficiency of all optical switching in the V-type pump-probe scheme. The coupled system of micro-ring resonator and atomic vapor is a promising building block for a variety of light vapor experiments, as it offers a very small footprint, high degree of integration and extremely strong confinement of light and vapor. As such it may be used for important applications, such as all optical switching, disp...

  14. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  15. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  16. Chemical Analysis Methods for Silicon Carbide

    Institute of Scientific and Technical Information of China (English)

    Shen Keyin

    2006-01-01

    @@ 1 General and Scope This Standard specifies the determination method of silicon dioxide, free silicon, free carbon, total carbon, silicon carbide, ferric sesquioxide in silicon carbide abrasive material.

  17. Simulation and Optimization of Polymer Electro-Optic Double Series-Coupled Microrings Resonator Switches%聚合物串联耦合双环电光开关的优化

    Institute of Scientific and Technical Information of China (English)

    闫欣; 马春生; 郑传涛; 王现银; 张大明

    2009-01-01

    In terms of the coupled mode theory,microring resonance theory and electro-optic modulation theory,a reasonable project is proposed for designing a polymer electro-optic switch based on the double series-coupled microrings.The simulation and optimization are performed under the resonant wavelength of 1.55 μm,the results are as follows:the core size of the microring is 1.6×1.6 μm2,confined layer between the core and the electrode is 1.6 μm,thickness of the electrode is 0.15 μm,radius of the microring is 15.2 μm,coupling gap between the micoring and the channel is 0.14 μm,that between the micoring and the microring is 0.6 μm,3 dB bandwidth is 0.06 μm,switching voltage is 6 V,insertion loss is 2.2 dB,and crosstalk is -20 dB.The output spectrum is flatter and steeper than that of the single microring.These results show that the designed device exhibits favorable switching functions.%利用耦合模理论、电光调制理论和微环谐振理论,提出一个聚合物串联耦合双环电光开关器件模型,在1.55 μm谐振波长下对该器件进行了模拟和优化.结果为:微环波导芯截面尺寸为1.6×1.6 μm2,波导芯与电极间的限制层厚度为1.6 μm,电极厚度为0.15 μm,微环半径为15.2 μm,微环与信道间的耦合间距为0.14 μm,微环与微环间的耦合间距为0.6 μm,输出光谱的3 dB带宽约为0.06 nm,开关电压约为6 V左右,插入损耗约为2.2 dB,串扰约为-20 dB.所设计的双环电光开关较单环型电光开关不仅输出光谱更加平坦陡峭,非谐振光更弱,而且开关电压更低.

  18. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    CERN Document Server

    Zhang, Xingyu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chen, Ray T

    2016-01-01

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 um-long coupled L0-type photonic crystalmicrocavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystalmicrocavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystalmicrocavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 us, and a fall time of 18.5 us. The measured on-chip loss on the transmission band is as l...

  19. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    Science.gov (United States)

    Zhang, Xingyu; Chakravarty, Swapnajit; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chen, Ray T.

    2015-11-01

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB.

  20. Microheater-integrated silicon coupled photonic crystal microcavities for low-power thermo-optic switching over a wide spectrum

    Science.gov (United States)

    Zhang, Xingyu; Chakravarty, Swapnajit; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chen, Ray T.

    2016-03-01

    We design, fabricate and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and antibonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20dB, an on-off switching power of 18.2mW, a therm-optic tuning efficiency of 0.63nm/mW, a rise time of 14.8μsec and a fall time of 18.5μsec. The measured on-chip loss on the transmission band is as low as 1dB.

  1. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xingyu, E-mail: xzhang@utexas.edu, E-mail: swapnajit.chakravarty@omegaoptics.com, E-mail: chenrt@austin.utexas.edu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai [Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758 (United States); Chakravarty, Swapnajit, E-mail: xzhang@utexas.edu, E-mail: swapnajit.chakravarty@omegaoptics.com, E-mail: chenrt@austin.utexas.edu [Omega Optics, Inc., Austin, Texas 78757 (United States); Chen, Ray T., E-mail: xzhang@utexas.edu, E-mail: swapnajit.chakravarty@omegaoptics.com, E-mail: chenrt@austin.utexas.edu [Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758 (United States); Omega Optics, Inc., Austin, Texas 78757 (United States)

    2015-11-30

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB.

  2. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    International Nuclear Information System (INIS)

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB

  3. Silicon micro-mold

    Science.gov (United States)

    Morales, Alfredo M.

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  4. A compact, integrated silicon device for the generation of spectrally-filtered, pair-correlated photons

    CERN Document Server

    Minkov, Momchil

    2016-01-01

    The third-order non-linearity of silicon gives rise to a spontaneous four-wave mixing process in which correlated photon pairs are generated. Sources based on this effect can be used for quantum computation and cryptography, and can in principle be integrated with standard CMOS fabrication technology and components. However, one of the major challenges is the on-chip demultiplexing of the photons, and in particular the filtering of the pump power, which is many orders of magnitude larger than that of the signal and idler photons. Here, we propose a photonic crystal coupled-cavity system designed so that the coupling of the pump mode to the output channel is strictly zero due to symmetry. We further analyze this effect in presence of fabrication disorder and find that, even then, a pump suppression of close to 40 dB can be achieved in state-of-the art systems. Due to the small mode volumes and high quality factors, our system is also expected to have a generation efficiency much higher than in standard micro-r...

  5. A compact, integrated silicon device for the generation of spectrally filtered, pair-correlated photons

    Science.gov (United States)

    Minkov, Momchil; Savona, Vincenzo

    2016-05-01

    The third-order nonlinearity of silicon gives rise to a spontaneous four-wave mixing process in which correlated photon pairs are generated. Sources based on this effect can be used for quantum computation and cryptography, and can in principle be integrated with standard CMOS fabrication technology and components. However, one of the major challenges is the on-chip demultiplexing of the photons, and in particular the filtering of the pump power, which is many orders of magnitude larger than that of the signal and idler photons. Here, we propose a photonic crystal coupled-cavity system designed so that the coupling of the pump mode to the output channel is strictly zero due to symmetry. We further analyze this effect in the presence of fabrication disorder and find that, even then, a pump suppression of close to 40 dB can be achieved in state-of-the-art systems. Due to the small mode volumes and high quality factors, our system is also expected to have a generation efficiency much higher than in standard micro-ring systems. Those two considerations make a strong case for the integration of our proposed design in future on-chip quantum technologies.

  6. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible blo

  7. Highly porous silicon membranes fabricated from silicon nitride/silicon stacks.

    Science.gov (United States)

    Qi, Chengzhu; Striemer, Christopher C; Gaborski, Thomas R; McGrath, James L; Fauchet, Philippe M

    2014-07-23

    Nanopore formation in silicon films has previously been demonstrated using rapid thermal crystallization of ultrathin (15 nm) amorphous Si films sandwiched between nm-thick SiO2 layers. In this work, the silicon dioxide barrier layers are replaced with silicon nitride, resulting in nanoporous silicon films with unprecedented pore density and novel morphology. Four different thin film stack systems including silicon nitride/silicon/silicon nitride (NSN), silicon dioxide/silicon/silicon nitride (OSN), silicon nitride/silicon/silicon dioxide (NSO), and silicon dioxide/silicon/silicon dioxide (OSO) are tested under different annealing temperatures. Generally the pore size, pore density, and porosity positively correlate with the annealing temperature for all four systems. The NSN system yields substantially higher porosity and pore density than the OSO system, with the OSN and NSO stack characteristics fallings between these extremes. The higher porosity of the Si membrane in the NSN stack is primarily due to the pore formation enhancement in the Si film. It is hypothesized that this could result from the interfacial energy difference between the silicon/silicon nitride and silicon/silicon dioxide, which influences the Si crystallization process. PMID:24623562

  8. Silicon nano-biotechnology

    CERN Document Server

    He, Yao

    2014-01-01

    This book reviews the latest advances in the development of silicon nano-biotechnology for biological and biomedical applications, which include biosensing, bioimaging, and cancer therapy. In this book, newly developed silicon nano-biotechnology and its biomedical applications are systematically introduced. For instance, fluorescent silicon nanoparticles, serving as novel high-performance biological nanoprobes, are superbly suited to real-time and long-term bioimaging. Silicon nanowire-based sensing platform is especially capable of sensitive, specific, and multiplexed detection of various bio

  9. Novel Silicon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Novel silicon nanotubes with inner-diameter of 60-80 nm was prepared using hydrogen-added dechlorination of SiCl4 followed by chemical vapor deposition (CVD) on a NixMgyO catalyst. The TEM observation showed that the suitable reaction temperature is 973 K for the formation of silicon nanotubes. Most of silicon nanotubes have one open end and some have two closed ends. The shape ofnanoscale silicon, however, is a micro-crystal type at 873 K, a rod or needle type at 993 K and an onion-type at 1023 K, respectively.

  10. ALICE silicon strip module

    CERN Multimedia

    Maximilien Brice

    2006-01-01

    This small silicon detector strip will be inserted into the inner tracking system (ITS) on the ALICE detector at CERN. This detector relies on state-of-the-art particle tracking techniques. These double-sided silicon strip modules have been designed to be as lightweight and delicate as possible as the ITS will eventually contain five square metres of these devices.

  11. Cervical silicone lymphadenopathy.

    Science.gov (United States)

    Gilbert, Latoni Kaysha; Thiruchelvam, Janavikulam

    2016-07-01

    A patient presented to the department of oral and maxillofacial surgery with a rare case of cervical silicone lymphadenopathy. She had a painless ovoid mass in the left side of her neck and had had cosmetic breast augmentation 10 years before. Radiological imaging and core biopsy examination were consistent with silicone lymphadenopathy. PMID:26830068

  12. Silicon Valley Ecosystem

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ It is unlikely that any industrial region of the world has received as much scrutiny and study as Silicon Valley. Despite the recent crash of Internet and telecommunications stocks,Silicon Valley remains the world's engine of growth for numerous high-technology sectors.

  13. Silicone-containing composition

    Science.gov (United States)

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  14. Steps towards silicon optoelectronics

    CERN Document Server

    Starovoytov, A

    1999-01-01

    nanostructure fabrication. Thus, this thesis makes a dual contribution to the chosen field: it summarises the present knowledge on the possibility of utilising optical properties of nanocrystalline silicon in silicon-based electronics, and it reports new results within the framework of the subject. The main conclusion is that due to its promising optoelectronic properties nanocrystalline silicon remains a prospective competitor for the cheapest and fastest microelectronics of the next century. This thesis addresses the issue of a potential future microelectronics technology, namely the possibility of utilising the optical properties of nanocrystalline silicon for optoelectronic circuits. The subject is subdivided into three chapters. Chapter 1 is an introduction. It formulates the oncoming problem for microelectronic development, explains the basics of Integrated Optoelectronics, introduces porous silicon as a new light-emitting material and gives a brief review of other competing light-emitting material syst...

  15. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  16. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to ""fill in the blanks"" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the curre

  17. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  18. Roadmap on silicon photonics

    Science.gov (United States)

    Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O'Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

    2016-07-01

    Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

  19. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  20. Emissivity of microstructured silicon.

    Science.gov (United States)

    Maloney, Patrick G; Smith, Peter; King, Vernon; Billman, Curtis; Winkler, Mark; Mazur, Eric

    2010-03-01

    Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 microm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range. Hemispherical-total emissivity is calculated for the samples and found to be 0.84 before a measurement-induced annealing and 0.65 after the measurement for the sulfur-doped sample. Secondary samples lack a measurement-induced anneal, and reasons for this discrepancy are presented. Emissivity numbers are plotted and compared with a silicon substrate, and Aeroglaze Z306 black paint. Use of microstructured silicon as a blackbody or microbolometer surface is modeled and presented, respectively.

  1. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  2. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  3. Recrystallization of polycrystalline silicon

    Science.gov (United States)

    Lall, C.; Kulkarni, S. B.; Graham, C. D., Jr.; Pope, D. P.

    1981-01-01

    Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

  4. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  5. Nonlinear silicon photonics

    OpenAIRE

    Tsia, KK; Jalali, B.

    2010-01-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - f...

  6. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  7. Oxygen defect processes in silicon and silicon germanium

    International Nuclear Information System (INIS)

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies

  8. Oxygen defect processes in silicon and silicon germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Sgourou, E. N.; Londos, C. A. [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece); Schwingenschlögl, U. [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  9. Silicon-Based Light Sources for Silicon Integrated Circuits

    Directory of Open Access Journals (Sweden)

    L. Pavesi

    2008-01-01

    Full Text Available Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

  10. Characterization of Integrated Optical Strain Sensors Based on Silicon Waveguides

    NARCIS (Netherlands)

    Westerveld, W.J.; Leinders, S.M.; Muilwijk, P.M.; Pozo, J.

    2013-01-01

    Microscale strain gauges are widely used in micro electro-mechanical systems (MEMS) to measure strains such as those induced by force, acceleration, pressure or sound. We propose all-optical strain sensors based on micro-ring resonators to be integrated with MEMS. We characterized the strain-induced

  11. Study on Mach-Zehnder type all optical logic gate based on microring resonator%基于 Mach-Zehnder结构微环谐振腔全光逻辑门的研究

    Institute of Scientific and Technical Information of China (English)

    高磊; 王涛

    2014-01-01

    In order to solve the problem of high pump power of logic gates , a novel Mach-Zehnder type all optical logic gate based on micro-ring resonator was proposed .The periodical patterns of air holes added in the micro-ring waveguide provide strong confinement on light , which enhances the third order nonlinear Kerr effect around the band edge and decreases the pump power of phase shift .Combining micro-ring resonator with Mach-Zehnder structure , different logic function can be realized with the phase shift in the different micro-rings controlled by Kerr effect .The impact of the different size of air holes on the structure was calculated and the detailed control methods of the logic gates were verified . The feasibility was proved .The simulation results show that this device possesses several practical advantages , such as low power consumption of less than 10dBm, delay of ps order, high speed data processing ability and μm order dimension.The device achieves the different kinds of logic gates and has the guiding significance to all optical networks .%为了解决全光逻辑门结构所需抽运能量过大的问题,提出了一种基于Mach-Zehnder结构微环谐振腔的全光控制逻辑门结构。通过在微环波导上加入空气孔加强对光的限制,增强了带边附近的3阶非线性效应,从而减小达到所需相移的抽运能量。将微环谐振腔与Mach-Zehnder结构结合,采用光学Kerr效应控制不同微环内相移的改变,从而实现不同逻辑门功能。同时进行了理论分析与仿真验证,计算了不同尺寸空气孔对于结构的影响,并对于不同逻辑功能的控制方法,验证了结构的可行性。结果表明,这种逻辑门结构所需抽运能量不超过10dBm,延迟处于皮秒量级,速度快,器件的尺寸处于微米量级,该结构可以同时实现不同的逻辑门状态,对于全光网络的研究有指导意义。

  12. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  13. Spintronics: Silicon takes a spin

    NARCIS (Netherlands)

    Jansen, Ron

    2007-01-01

    An efficient way to transport electron spins from a ferromagnet into silicon essentially makes silicon magnetic, and provides an exciting step towards integration of magnetism and mainstream semiconductor electronics.

  14. Emissivity of microstructured silicon.

    Science.gov (United States)

    Maloney, Patrick G; Smith, Peter; King, Vernon; Billman, Curtis; Winkler, Mark; Mazur, Eric

    2010-03-01

    Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 microm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range. Hemispherical-total emissivity is calculated for the samples and found to be 0.84 before a measurement-induced annealing and 0.65 after the measurement for the sulfur-doped sample. Secondary samples lack a measurement-induced anneal, and reasons for this discrepancy are presented. Emissivity numbers are plotted and compared with a silicon substrate, and Aeroglaze Z306 black paint. Use of microstructured silicon as a blackbody or microbolometer surface is modeled and presented, respectively. PMID:20197803

  15. The LHCb Silicon Tracker

    Science.gov (United States)

    Tobin, Mark

    2016-09-01

    The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

  16. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  17. Silicon carbide thyristor

    Science.gov (United States)

    Edmond, John A. (Inventor); Palmour, John W. (Inventor)

    1996-01-01

    The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

  18. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick;

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  19. The Silicon Cube detector

    Energy Technology Data Exchange (ETDEWEB)

    Matea, I.; Adimi, N. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France); Blank, B. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France)], E-mail: blank@cenbg.in2p3.fr; Canchel, G.; Giovinazzo, J. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France); Borge, M.J.G.; Dominguez-Reyes, R.; Tengblad, O. [Insto. Estructura de la Materia, CSIC, Serrano 113bis, E-28006 Madrid (Spain); Thomas, J.-C. [GANIL, CEA/DSM - CNRS/IN2P3, BP 55027, F-14076 Caen Cedex 5 (France)

    2009-08-21

    A new experimental device, the Silicon Cube detector, consisting of six double-sided silicon strip detectors placed in a compact geometry was developed at CENBG. Having a very good angular coverage and high granularity, it allows simultaneous measurements of energy and angular distributions of charged particles emitted from unbound nuclear states. In addition, large-volume Germanium detectors can be placed close to the collection point of the radioactive species to be studied. The setup is ideally suited for isotope separation on-line (ISOL)-type experiments to study multi-particle emitters and was tested during an experiment at the low-energy beam line of SPIRAL at GANIL.

  20. CMS silicon tracker developments

    Energy Technology Data Exchange (ETDEWEB)

    Civinini, C. E-mail: carlo.civinini@fi.infn.it; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D' Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell' Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B

    2002-01-21

    The CMS Silicon tracker consists of 70 m{sup 2} of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors.

  1. Strained Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Ralf B. Wehrspohn

    2012-05-01

    Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

  2. LHCb Silicon Tracker infrastructure

    CERN Document Server

    Ermoline, Yuri

    2004-01-01

    The LHCb Silicon Tracker is a vital part of the experiment. It consists of four planar stations: one trigger and three inner tracking stations. The operation of the Silicon Tracker detectors and electronics is provided by its infrastructure: cooling system, high- and low-voltage power supply systems, temperature and radiation monitoring systems. Several components of these systems are located in the experimental hall and subjected to radiation. This paper mainly concentrates on the recent development: requirements definition, evaluation of possible implementation scenarios, component choice and component radiation tests.

  3. Irradiation Defects in Silicon Crystal

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.

  4. Elite silicon and solar power

    International Nuclear Information System (INIS)

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production

  5. [Biological function of some elements and their compounds. IV. Silicon, silicon acids, silicones].

    Science.gov (United States)

    Puzanowska-Tarasiewicz, Helena; Kuźmicka, Ludmiła; Tarasiewicz, Mirosław

    2009-11-01

    The review is devoted for the occurance, meaning of silicon and their compounds, especially silicon acids and silicones. Silicon participates in biosynthesis of collagen, the basic component of connective tissue. It strengthens and makes the walls of blood vessels more flexible, diminishes capillaries permeability, accelerates healing processes, has a sebostatic activity, strengthens hair and nails. This element has a beneficial effect on phosphorylation of proteins saccharides, and nucleotides. It is also essential for the formation of cytoskeleton and other cellular structures of mechanical or supportive function. Silicon is an initial substrate for obtaining silicones. These are synthetic polymers, in which silicon atoms are bound by oxygen bridges. They are used in almost all kinds of products due to their most convenient physical and chemical properties: moistening and film-forming, giving liquid form increasing solubility. Silicon acids form colloid gel, silica gel, with absorptive abilities, like active carbon. PMID:19999810

  6. Plasma Deposition of Amorphous Silicon

    Science.gov (United States)

    Calcote, H. F.

    1982-01-01

    Strongly adhering films of silicon are deposited directly on such materials as Pyrex and Vycor (or equivalent materials) and aluminum by a non-equilibrium plasma jet. Amorphous silicon films are formed by decomposition of silicon tetrachloride or trichlorosilane in the plasma. Plasma-jet technique can also be used to deposit an adherent silicon film on aluminum from silane and to dope such films with phosphorus. Ability to deposit silicon films on such readily available, inexpensive substrates could eventually lead to lower cost photovoltaic cells.

  7. Composition Comprising Silicon Carbide

    Science.gov (United States)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  8. Silicon Valley Policy

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    @@ Silicon Valley is home to the most dynamic industries in the California economy. These industries--the high-tech sector--are driven by innovation, and each new wave of innovation is usually led by creative entrepreneurs starting new firms.

  9. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  10. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  11. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  12. Silicon in cereal straw

    DEFF Research Database (Denmark)

    Murozuka, Emiko

    Silicon (Si) is known to be a beneficial element for plants. However, when plant residues are to be used as feedstock for second generation bioenergy, Si may reduce the suitability of the biomass for biochemical or thermal conversion technologies. The objective of this PhD study was to investigate...

  13. Silicone/Acrylate Copolymers

    Science.gov (United States)

    Dennis, W. E.

    1982-01-01

    Two-step process forms silicone/acrylate copolymers. Resulting acrylate functional fluid is reacted with other ingredients to produce copolymer. Films of polymer were formed by simply pouring or spraying mixture and allowing solvent to evaporate. Films showed good weatherability. Durable, clear polymer films protect photovoltaic cells.

  14. Silicon Valley's Turnaround

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ During Silicon Valley's dramatic economic growth fueled by the Internet boom and business investment in information technology, employment in the region's high-tech sec tor tripled between 1995 and 2000. The economic boom gave rise to many new firms,drawing em ployees into high-tech jobs from other regions and other industries.

  15. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  16. Ultrasmall silicon quantum dots

    NARCIS (Netherlands)

    Zwanenburg, F.A.; Van Loon, A.A.; Steele, G.A.; Rijmenam, C.E.W.M.; Balder, T.; Fang, Y.; Lieber, C.M.; Kouwenhoven, L.P.

    2009-01-01

    We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and addition

  17. Silicon Carbide Optics for Space Situational Awareness and Responsive Space Needs

    Science.gov (United States)

    Robichaud, J.; Green, J.; Catropa, D.; Rider, B.; Ullathorne, C.

    Over the past 10 years the application of Silicon Carbide (SiC) materials to space based imaging systems has expanded. The aerospace community has long recognized the technical, cost, and schedule benefits associated with the material, and adoption of the technology is facilitated as more successful flight systems are demonstrated. SiC provides a number of technical advantages, as a result of superior material properties. The material can also be manufactured using near-net-shape fabrication processes which provide significant cost and schedule advantages compared with competing material technologies. These technical and manufacturing advantages make SiC uniquely well suited to address the needs associated with Space Situational Awareness (SSA) and Responsive Space (RS) applications. The material has a low coefficient of thermal expansion, and a high thermal conductivity, allowing visible quality imaging in the presence of stressing, and changing, thermal loads. The material's specific stiffness is high, approximately 70% of Beryllium, allowing stiff, lightweight optical systems to be produced. Passively athermal systems have been produced, demonstrating the ability of the material to provide visible quality imaging, without the need for actively controlled focus adjust mechanisms. In addition, SiC structural elements do not outgas, and have no issues with moisture absorption, allowing rapid on-orbit data acquisition. From the manufacturing perspective the material offers dramatic schedule benefits, these come primarily from L-3 SSG's near-net-shape manufacturing process which allows complex, lightweighted optical and structural elements to be produced without the need for costly/time-consuming machining processes. These schedule advantages become more dramatic as the aperture of the system increases, and/or as the number of units increases. In this paper we provide an overview of the technical and manufacturing advantages associated with SiC, provide background

  18. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  19. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  1. The CMS silicon tracker

    Energy Technology Data Exchange (ETDEWEB)

    Focardi, E. E-mail: focardi@pi.infn.it; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D' Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell' Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B

    2000-10-11

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction.

  2. Silicon oxynitride based photonics

    OpenAIRE

    Wörhoff, K.; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material class and discuss several application examples. Preliminary results on novel processes, which will lead to largely reduced hydrogen incorporation and enable reflow of SiON material, are being pres...

  3. Green silicon photonics

    OpenAIRE

    Jalali, B.; Fathpour, S.; Tsia, K

    2009-01-01

    Silicon photonics have provided low-cost communication components for Internet applications and are now aimed towards providing environmentally friendly and green optical solutions. The need for energy-efficient photonics is due to the excessive energy dissipated in advanced electronics and an increase in power density that has posed a challenge to the most advanced chip-cooling technologies. The two-photon absorption (TPA)-generated free carriers need to be actively removed from the waveguid...

  4. Strained Silicon Photonics

    OpenAIRE

    Wehrspohn, Ralf B; Jörg Schilling; Christian Bohley; Clemens Schriever

    2012-01-01

    A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is inves...

  5. Integrated silicon microspectrometers

    OpenAIRE

    Kong, S. H.; Correia, J. H.; Bartek, M.; Wolffenbuttel, R.F.

    2001-01-01

    Microspectrometers, which read color and the results from analytical chemistry, are used for quality inspection in industry and agiculture. They read the chromatography results by measuring the infrared (IR) absorption of the chemical constituent between the IR source and the grating. Micromachining can implement the dispersion and detection elements in a silicon microspectrometer so that it can analyze the spectrum of incident light. The microspectrometer may either operate an array of de...

  6. Bringing Silicon Valley inside.

    Science.gov (United States)

    Hamel, G

    1999-01-01

    In 1998, Silicon Valley companies produced 41 IPOs, which by January 1999 had a combined market capitalization of $27 billion--that works out to $54,000 in new wealth creation per worker in a single year. Multiply the number of employees in your company by $54,000. Did your business create that much new wealth last year? Half that amount? It's not a group of geniuses generating such riches. It's a business model. In Silicon Valley, ideas, capital, and talent circulate freely, gathering into whatever combinations are most likely to generate innovation and wealth. Unlike most traditional companies, which spend their energy in resource allocation--a system designed to avoid failure--the Valley operates through resource attraction--a system that nurtures innovation. In a traditional company, people with innovative ideas must go hat in hand to the guardians of the old ideas for funding and for staff. But in Silicon Valley, a slew of venture capitalists vie to attract the best new ideas, infusing relatively small amounts of capital into a portfolio of ventures. And talent is free to go to the companies offering the most exhilarating work and the greatest potential rewards. It should actually be easier for large, traditional companies to set up similar markets for capital, ideas, and talent internally. After all, big companies often already have extensive capital, marketing, and distribution resources, and a first crack at the talent in their own ranks. And some of them are doing it. The choice is yours--you can do your best to make sure you never put a dollar of capital at risk, or you can tap into the kind of wealth that's being created every day in Silicon Valley.

  7. Sintered silicon carbide

    International Nuclear Information System (INIS)

    A sintered silicon carbide body having a predominantly equiaxed microstructure consists of 91 to 99.85% by weight of silicon carbide at least 95% of which is the alpha phase, up to 5.0% by weight carbonized organic material, 0.15 to 3.0% of boron, and up to 1.0% by weight additional carbon. A mixture of 91 to 99.85 parts by weight silicon carbide having a surface area of 1 to 100 m2/g, 0.67 to 20 parts of a carbonizable organic binder with a carbon content of at least 33% by weight, 0.15 to 5 parts of a boron source containing 0.15 to 3.0 parts by weight boron and up to 15 parts by weight of a temporary binder is mixed with a solvent, the mixture is then dried, shaped to give a body with a density of at least 1.60 g/cc and fired at 1900 to 22500C to obtain an equiaxed microstructure. (author)

  8. Micromachined Silicon Cantilever Magnetometry.

    Science.gov (United States)

    Chaparala, M. V.

    1998-03-01

    Magnetic torque measurements give us a simple and attractive method for characterizing the anisotropic properties of magnetic materials. Silicon torque and force magnetometers have many advantages over traditional torsion fiber torque magnetometers. We have fabricated micromachined silicon torque and force magnetometers employing both capacitive(``Capacitance platform magnetometer for thin film and small crystal superconductor studies'', M. Chaparala et al.), AIP Conf. Proc. (USA), AIP Conference Proceedings, no.273, p. 407 1993. and strain dependent FET detection(``Strain Dependent Characterstics of Silicon MOSFETs and their Applications'', M. Chaparala et al.), ISDRS Conf. Proc. 1997. schemes which realize some of these gains. We will present the pros and cons of each of the different detection schemes and the associated design constraints. We have developed a feedback scheme which enables null detection thus preserving the integrity of the sample orientation. We will present a method of separating out the torque and force terms in the measured signals and will discuss the errors associated with each of the designs. Finally, we present the static magnetic torque measurements on various materials with these devices, including equilibrium properties on sub microgram specimens of superconductors, and dHvA measurements near H_c2. We will also discuss their usefulness in pulsed magnetic fields(``Cantilever magnetometry in pulsed magnetic fields", M. J. Naughton et al.), Rev. of Sci. Instrum., vol.68, p. 4061 1997..

  9. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  10. Stabilization of elusive silicon oxides.

    Science.gov (United States)

    Wang, Yuzhong; Chen, Mingwei; Xie, Yaoming; Wei, Pingrong; Schaefer, Henry F; Schleyer, Paul von R; Robinson, Gregory H

    2015-06-01

    Molecular SiO2 and other simple silicon oxides have remained elusive despite the indispensable use of silicon dioxide materials in advanced electronic devices. Owing to the great reactivity of silicon-oxygen double bonds, as well as the low oxidation state of silicon atoms, the chemistry of simple silicon oxides is essentially unknown. We now report that the soluble disilicon compound, L:Si=Si:L (where L: = :C{N(2,6-(i)Pr2C6H3)CH}2), can be directly oxidized by N2O and O2 to give the carbene-stabilized Si2O3 and Si2O4 moieties, respectively. The nature of the silicon oxide units in these compounds is probed by spectroscopic methods, complementary computations and single-crystal X-ray diffraction.

  11. Evaluation of breast silicone implants.

    Science.gov (United States)

    Brenner, R James

    2013-08-01

    While clinical evaluation of breast implants and their complications can identify capsule contracture and rupture of saline implants, the identification of silicone implant failure is best accomplished by silicone specific protocols for MRI with orthogonal acquisition. Such imaging can also help resolve other clinical problems. Following a brief overview of the history and development of commercial use of silicone implants and alternatives, this article outlines the approach toward optimal imaging and expected results.

  12. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N; Franco, A; Riesen, Y.; Despeisse, M; S. Dunand; Powolny, F; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  13. Silicon electrodeposition in molten fluorides

    OpenAIRE

    Bieber, Anne-Laure; Massot, Laurent; Gibilaro, Mathieu; Cassayre, Laurent; Taxil, Pierre; Chamelot, Pierre

    2011-01-01

    Silicon nucleation process was investigated in molten NaF-KF (40-60 mol%) on silver electrodes in the 820-950°C temperature range in order to optimize silicon coating operating conditions. Chronoamperometric measurements evidenced that silicon electrodeposition process involved an instantaneous nucleation with diffusion-controlled nuclei growth whatever temperature and Si(IV) ions concentration in the mixture. The overpotential and temperature influence on nucleation sites number was also stu...

  14. Silicon clusters: Chemistry and structure

    Energy Technology Data Exchange (ETDEWEB)

    Jarrold, M.F.; Ray, U.; Ijiri, Y. (AT and T Bell Labs., Murray Hill, NJ (USA))

    1991-01-01

    The chemical reactions of size selected silicon cluster ions (containing up to 70 atoms) have been studied with a number of different reagents using injected ion drift tube techniques. Both kinetic and equilibrium measurements have been performed as a function of temperature, and the influence of cluster annealing on chemical reactivity explored. Unlike metal clusters, where bulk behavior appears to be approached with around 30 atoms, large silicon clusters (n up to 70) are much less reactive than bulk silicon surfaces. These results suggest that the clusters in the size range examined here are not small crystals of bulk silicon, but have compact, high coordination number structures with few dangling bonds. (orig.).

  15. Hybrid silicon modulators Invited Paper

    Institute of Scientific and Technical Information of China (English)

    Hui-Wen Chen; Yinghao Kuo; J. E. Bowers

    2009-01-01

    A number of active elements have been demonstrated using the hybrid silicon evanescent platform, includ- ing lasers, amplifiers, and detectors. In this letter, two types of hybrid silicon modulators, fulfilling the building blocks in optical communication on this platform, are presented. A hybrid silicon electroabsorp-tion modulator, suitable for high speed interconnects, with 10-dB extinction ratio at -5 V and 16-GHz modulation bandwidth is demonstrated. In addition, a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 V.mm voltage-length product, 150-nm optical bandwidth, and a large signal modulation up to 10 Gb/s.

  16. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  17. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  18. Social Networks in Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ Social network is a dominant, distinguishing characteristic of Silicon Valley. Because innovation entails coping with a high degree of uncertainty,such innovation is particularly dependent on networks.

  19. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    OpenAIRE

    Walder Cordula; Kellermann Martin; Wendler Elke; Rensberg Jura; von Maydell Karsten; Agert Carsten

    2015-01-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or ...

  20. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material. The...

  1. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Directory of Open Access Journals (Sweden)

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  2. Dense granular media as athermal glasses

    OpenAIRE

    JORGE KURCHAN

    2001-01-01

    I briefly describe how mean-field glass models can be extended to the case in which the bath and friction are non-thermal, thus promoting them to granular matter mean-field caricatures. Solving their dynamics one discovers a temperature with a thermodynamic meaning associated with the slow rearrangements, even though there is no thermodynamic temperature at level of fast dynamics. This temperature can be shown to match the one defined on the basis of a flat measure over blocked (jammed) confi...

  3. Silicon production process evaluations

    Science.gov (United States)

    1982-01-01

    Chemical engineering analyses involving the preliminary process design of a plant (1,000 metric tons/year capacity) to produce silicon via the technology under consideration were accomplished. Major activities in the chemical engineering analyses included base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provided detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process.

  4. Edgeless silicon pad detectors

    Science.gov (United States)

    Perea Solano, B.; Abreu, M. C.; Avati, V.; Boccali, T.; Boccone, V.; Bozzo, M.; Capra, R.; Casagrande, L.; Chen, W.; Eggert, K.; Heijne, E.; Klauke, S.; Li, Z.; Mäki, T.; Mirabito, L.; Morelli, A.; Niinikoski, T. O.; Oljemark, F.; Palmieri, V. G.; Rato Mendes, P.; Rodrigues, S.; Siegrist, P.; Silvestris, L.; Sousa, P.; Tapprogge, S.; Trocmé, B.

    2006-05-01

    We report measurements in a high-energy pion beam of the sensitivity of the edge region in "edgeless" planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5±8 stat..±6 syst.) μm.

  5. Edgeless silicon pad detectors

    Energy Technology Data Exchange (ETDEWEB)

    Perea Solano, B. [CERN, CH-1211 Geneva 23 (Switzerland)]. E-mail: blanca.perea.solano@cern.ch; Abreu, M.C. [LIP and University of Algarve, 8000 Faro (Portugal); Avati, V. [CERN, CH-1211 Geneva 23 (Switzerland); Boccali, T. [INFN Sez. di Pisa and Scuola Normale Superiore, Pisa (Italy); Boccone, V. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Bozzo, M. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Capra, R. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Casagrande, L. [INFN Sez. di Roma 2 and Universita di Roma 2, Rome (Italy); Chen, W. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Eggert, K. [CERN, CH-1211 Geneva 23 (Switzerland); Heijne, E. [CERN, CH-1211 Geneva 23 (Switzerland); Klauke, S. [CERN, CH-1211 Geneva 23 (Switzerland); Li, Z. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Maeki, T. [Helsinki Institute of Physics, Helsinki (Finland); Mirabito, L. [CERN, CH-1211 Geneva 23 (Switzerland); Morelli, A. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Niinikoski, T.O. [CERN, CH-1211 Geneva 23 (Switzerland); Oljemark, F. [Helsinki Institute of Physics, Helsinki (Finland); Palmieri, V.G. [Helsinki Institute of Physics, Helsinki (Finland); Rato Mendes, P. [LIP and University of Algarve, 8000 Faro (Portugal); Rodrigues, S. [LIP and University of Algarve, 8000 Faro (Portugal); Siegrist, P. [CERN, CH-1211 Geneva 23 (Switzerland); Silvestris, L. [INFN Sez. Di Bari, Bari (Italy); Sousa, P. [LIP and University of Algarve, 8000 Faro (Portugal); Tapprogge, S. [Helsinki Institute of Physics, Helsinki (Finland); Trocme, B. [Institut de Physique Nucleaire, Villeurbanne (France)

    2006-05-01

    We report measurements in a high-energy pion beam of the sensitivity of the edge region in 'edgeless' planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5{+-}8{sub stat.}.{+-}6{sub syst.}) {mu}m.

  6. Silicon Valley Lifestyle

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ As we embrace the rapid developments of the new media age,competitiveness in the field of internet and computer technology is an increasingly crucial factor in stimulating new business,jobs and new industry in the region.Accelerating advancements in new media,internet,software and computer technologies offer new commercial opportunities and sources of economic revenue. Silicon Valley has been a model of the new age since its existence.While the dream place not only has a unique business model,but also has a very special lifestyle.

  7. Colloidal luminescent silicon nanorods.

    Science.gov (United States)

    Lu, Xiaotang; Hessel, Colin M; Yu, Yixuan; Bogart, Timothy D; Korgel, Brian A

    2013-07-10

    Silicon nanorods are grown by trisilane decomposition in hot squalane in the presence of tin (Sn) nanocrystals and dodecylamine. Sn induces solution-liquid-solid nanorod growth with dodecylamine serving as a stabilizing ligand. As-prepared nanorods do not luminesce, but etching with hydrofluoric acid to remove residual surface oxide followed by thermal hydrosilylation with 1-octadecene induces bright photoluminescence with quantum yields of 4-5%. X-ray photoelectron spectroscopy shows that the ligands prevent surface oxidation for months when stored in air. PMID:23731184

  8. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  9. Direct Imprinting of Liquid Silicon.

    Science.gov (United States)

    Masuda, Takashi; Takagishi, Hideyuki; Yamazaki, Ken; Shimoda, Tatsuya

    2016-04-20

    A polymeric precursor solution for semiconducting silicon called "liquid silicon" was synthesized and directly imprinted to form well-defined and fine amorphous silicon patterns. The spin-coated film was cured and imprinted followed by annealing at 380 °C to complete the polymer-to-silicon conversion. A pattern with dimensions of several hundreds of nanometers or less was obtained on a substrate. We demonstrated that the curing step before imprinting is particularly important in the imprinting process. A curing temperature of 140-180 °C was found to be optimal in terms of the film's deformability and molding properties. Fourier transform infrared spectroscopy and thermal analysis clarified that the cross-linking of the polymer due to the 1,2-hydrogen shift reaction was induced exponentially with the release of a large amount of SiH4/H2 gases at temperatures between 140 and 220 °C, leading to the solidification of the film. Consequently, the film completely lost its deformability at higher temperatures. Despite a volume shrinkage as large as 53-56% during the polymer-to-silicon conversion, well-defined angular patterns were preserved. Fine silicon patterns were formed via the direct imprinting of liquid silicon with high resolution and high throughput, demonstrating the usefulness of this technique for the future manufacturing of silicon electronics. PMID:27028558

  10. Luneburg lens in silicon photonics

    OpenAIRE

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-01-01

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms. (C) 2011 Optical Society of America

  11. Radiation hard cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Casagrande, L. E-mail: luca.casagrande@cern.ch; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D' Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O' Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M

    2002-01-21

    It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors.

  12. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  13. Radiation damage in silicon detectors

    CERN Document Server

    Bruzzi, Mara

    2000-01-01

    This work presents an overview of the most important mechanisms of radiation damage in silicon detectors to be used for high energy experiments in LHC. The changes in the shallow concentration have been studied by Thermally Stimulated Currents (TSC) after proton and neutron irradiation with fluences up to 1015 cm-2 to investigate the role of thermal donors and the donor-removal effect in standard and oxygen enriched silicon with different resistivities. Deep defects in irradiated silicon have been analysed by Deep Level Transient Spectroscopy (DLTS) and Photo Induced Current Transient Spectroscopy (P1CTS) in the same materials. The radiation-induced microscopic disorder has been related with the carrier transport properties of irradiated silicon measured by Hall effect, by capacitance and current vs. voltage characteristics and with charge collection efficiency. The dependence of the irradiated silicon detectors performances on crystal orientation, on incident particle type and on the starting concentration o...

  14. Silicone Granulomas, a Growing Problem?

    Science.gov (United States)

    Park, Michelle E; Curreri, Alexis T; Taylor, Gina A; Burris, Katy

    2016-05-01

    The formation of granulomas is known to be a possible adverse effect of liquid silicone administration, used for soft tissue augmentation. Its plumping effects provide enhancement of certain body parts, such as the lips, hips, and buttocks. The desire for enhancement, perhaps influenced by popular culture and an unrealistic standard of beauty, leads individuals to seek silicone injections. There is a growing population of women and men receiving injections by unlicensed, unskilled "practitioners" not related to the healthcare profession. Complications under such circumstances are not uncommon, particularly the emergence of silicone granulomas, and the authors' medical center has seen an increase in such cases. In this case report, the authors illustrate a young patient with significant complications from her silicone injections, review current therapies for silicone granulomas, and discuss this growing medical problem. PMID:27386046

  15. 光梯度力驱动的纳米硅基光开关∗%A nano-silicon-photonic switch driven by an optical gradient force

    Institute of Scientific and Technical Information of China (English)

    林建潇; 吴九汇; 刘爱群; 陈喆; 雷浩

    2015-01-01

    通过一道光改变另一道光的传输路线是光子集成网络中重要而长远的目标,然而,由于硅材料的光学非线性较弱,在硅材料上实现开关的全光控制难以实现.因此本文提出了一种由光梯度力驱动的纳米硅基光开关,实现了硅基光开关的全光控制.该光开关由一个部分悬空的微环谐振器和一个交叉波导结构构成,当通入一道控制光时,悬空的微环谐振器在光梯度力的作用下发生弯曲,微环谐振器的谐振波长随之发生变化,从而实现光信号的传输路线发生改变.该光开关利用纳米光子制造技术在标准绝缘体上硅晶圆上制造,实验数据得出其最小消光比为10.67 dB,最大串扰为−11.01 dB,开关时间分别为180 ns和170 ns.该光开关具有尺寸小,响应速度快,低损耗和可拓展等优点,在片上集成光路、高速信号处理以及下一代光纤通信网络中具有潜在应用.%Using light to dynamically and stably redirect the flow of another beam of light is a long-term goal for photonic-integrated circuits. However, it is challenging to realize a practically all-optical switching device in silicon owing to its weak optical nonlinearity. Major published work on all-optical switches were using single-photon absorption and two-photon absorption, which requires ultrahigh switching energy. This paper presents a nano-silicon-photonic all-optical switch driven by an optical gradient force, in which a fast switching speed with low power consumption is obtained. Each switching element is composed of a waveguide crossing connection and a micro-ring resonator. The ring resonator is side-coupled to a double-etched waveguide crossing, while the micro-ring resonator is partially released from the substrate and becomes free-standing. When the“drop”port is in“OFF”state, the wavelength of the signal light from the“input”port does not satisfy the resonant condition in the micro-ring. Therefore, light is

  16. The PAMELA silicon tracker

    Energy Technology Data Exchange (ETDEWEB)

    Straulino, S. E-mail: straulino@fi.infn.it; Adriani, O.; Bonechi, L.; Bongi, M.; Castellini, G.; D' Alessandro, R.; Gabbanini, A.; Grandi, M.; Papini, P.; Ricciarini, S.B.; Spillantini, P.; Taccetti, F.; Tesi, M.; Vannuccini, E

    2004-09-01

    The silicon tracker of the PAMELA apparatus has been assembled and it is ready to fly on-board the Russian satellite Resurs DK for a 3-year mission. The experiment will study, mainly, spectra of particles and antiparticles in cosmic rays. The magnetic spectrometer's primary goal is to precisely measure momenta of charged particles, whose trajectories have been bent by a permanent magnet. The detector is composed of 6 planes of double-sided silicon microstrip detectors, inserted between adjacent modules of a permanent magnet which produces an almost uniform magnetic field inside a rectangular cavity that particles cross. The spatial resolution of the detectors is about 3 {mu}m for the bending coordinate. The development of such detectors required a complex manufacturing procedure in order to preserve the physical performance in a device suitable for a space mission. In the construction phase data originating from both beam tests and simulation helped to check the detector's characteristics and to optimize the achievable spatial resolution. The development and the final assembling of these detectors are described in this paper.

  17. Diseño, desarrollo y construcción de una micro-red de 5 KVA con cargas dinámicas y desequilibrios programables. Parte II: Accionamiento dinámico regulable y red de distribución

    OpenAIRE

    Martín Montero, Álvaro

    2016-01-01

    El presente Trabajo Fin de Grado versa sobre el diseño, desarrollo y construcción de una micro-red de 5 KVA con un sistema de gestión, regulación y control a través de una unidad centralizada en un PC, de forma que sea posible variar la demanda de potencia a la vez que se generan desequilibrios. El equipo completo está formado por tres sistemas: -Sistema de demanda: Puede modificar el consumo de potencia de forma dinámica e introducir desequilibrios y distorsión armónica. Para ello disp...

  18. A 110 GHz passive mode-locked fiber laser based on a nonlinear silicon-micro-ring-resonator

    International Nuclear Information System (INIS)

    Mode-locked fiber lasers have many important applications in science and engineering. In this work, we demonstrate for the first time a 110 GHz high repetition rate mode-locked fiber laser using a silicon-based micro-ring resonator (SMRR) to act as an intra-cavity optical comb filter, as well as an optical nonlinear element. No electrical bias for the SMRR is required to reduce free carrier absorption. The SMRR has a free spectral range of 0.88 nm, enforcing laser mode-locking at the 110 GHz high rate. The optical nonlinearity of the SMRR also supports the dissipative four-wave mixing effect for generating the mode-locked optical pulse trains. The mode-locked pulse-width, optical 3 dB spectral bandwidth and the time–bandwidth product (TBP) are experimentally measured under different pump currents to the erbium-doped fiber-amplifier module inside the laser cavity. The relative intensity noise and the line-width of the proposed laser are also evaluated. Furthermore, a long-term monitoring is performed. The experimental results show that the optical pulse train generated by the SMRR-based mode-locked fiber laser has a 2.6 ps pulse-width (pump current at 400 mA) at a 110 GHz high repetition rate, narrow line-width (1 kHz), high stability (under observation of an hour), and nearly Gaussian transform-limited (TBP is 0.455). (letters)

  19. Silicene: silicon conquers the 2D world

    Science.gov (United States)

    Le Lay, Guy; Salomon, Eric; Angot, Thierry

    2016-01-01

    We live in the digital age based on the silicon chip and driven by Moore's law. Last July, IBM created a surprise by announcing the fabrication of a 7 nm test chip with functional transistors using, instead of just silicon, a silicon-germanium alloy. Will silicon be dethroned?

  20. Silicon force sensor

    Science.gov (United States)

    Galambos, Paul C.; Crenshaw, Thomas B.; Nishida, Erik E.; Burnett, Damon J.; Lantz, Jeffrey W.

    2016-07-05

    The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

  1. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

    Institute of Scientific and Technical Information of China (English)

    LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

    2004-01-01

    The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

  2. Simulation in Amorphous Silicon and Amorphous Silicon Carbide Pin Diodes

    OpenAIRE

    Gonçalves, Dora; Fernandes, Miguel; Louro, Paula; Fantoni, Alessandro; Vieira, Manuela

    2014-01-01

    Part 21: Electronics: Devices International audience Photodiodes are devices used as image sensors, reactive to polychromatic light and subsequently color detecting, and they are also used in optical communication applications. To improve these devices performance it is essential to study and control their characteristics, in fact their capacitance and spectral and transient responses. This study considers two types of diodes, an amorphous silicon pin and an amorphous silicon carbide pi...

  3. Studies of silicon carbide and silicon carbide nitride thin films

    Science.gov (United States)

    Alizadeh, Zhila

    Silicon carbide semiconductor technology is continuing to advance rapidly. The excellent physical and electronic properties of silicon carbide recently take itself to be the main focused power device material for high temperature, high power, and high frequency electronic devices because of its large band gap, high thermal conductivity, and high electron saturation drift velocity. SiC is more stable than Si because of its high melting point and mechanical strength. Also the understanding of the structure and properties of semiconducting thin film alloys is one of the fundamental steps toward their successful application in technologies requiring materials with tunable energy gaps, such as solar cells, flat panel displays, optical memories and anti-reflecting coatings. Silicon carbide and silicon nitrides are promising materials for novel semiconductor applications because of their band gaps. In addition, they are "hard" materials in the sense of having high elastic constants and large cohesive energies and are generally resistant to harsh environment, including radiation. In this research, thin films of silicon carbide and silicon carbide nitride were deposited in a r.f magnetron sputtering system using a SiC target. A detailed analysis of the surface chemistry of the deposited films was performed using x-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy whereas structure and morphology was studied atomic force microscopy (AFM), and nonoindentation.

  4. Characterization of silicon-silicon carbide ceramic derived from carbon-carbon silicon carbide composites

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Vijay K. [Indian Institute of Technology, Varanasi (India). Dept. of Mechanical Engineering; Krenkel, Walter [Univ. of Bayreuth (Germany). Dept. of Ceramic Materials Engineering

    2013-04-15

    The main objective of the present work is to process porous silicon - silicon carbide (Si - SiC) ceramic by the oxidation of carboncarbon silicon carbide (C/C - SiC) composites. Phase studies are performed on the oxidized porous composite to examine the changes due to the high temperature oxidation. Further, various characterization techniques are performed on Si- SiC ceramics in order to study the material's microstructure. The effects of various parameters such as fiber alignment (twill weave and short/chopped fiber) and phenolic resin type (resol and novolak) are characterized.

  5. Silicon chemistry in interstellar clouds

    Energy Technology Data Exchange (ETDEWEB)

    Langer, W.D.; Glassgold, A.E. (AT T Bell Laboratories, Murray Hill, NJ (USA) New York Univ., NY (USA))

    1990-03-01

    A new model of interstellar silicon chemistry is presented that explains the lack of SiO detections in cold clouds and contains an exponential temperature dependence for the SiO abundance. A key aspect of the model is the sensitivity of SiO production by neutral silicon reactions to density and temperature, which arises from the dependence of the rate coefficients on the population of the excited fine-structure levels of the silicon atom. As part of the explanation of the lack of SiO detections at low temperatures and densities, the model also emphasizes the small efficiencies of the production routes and the correspondingly long times needed to reach equilibrium. Measurements of the abundance of SiO, in conjunction with theory, can provide information on the physical properties of interstellar clouds such as the abundance of oxygen bearing molecules and the depletion of interstellar silicon. 38 refs.

  6. The History of Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ Just as Manchester was once the center for indus trial progress, the microelectronics industry also has a heartland. Silicon Valley is located in a thirty by ten miles strip between San Francisco and San Jose,California.

  7. Optical information capacity of silicon

    CERN Document Server

    Dimitropoulos, Dimitris

    2014-01-01

    Modern computing and data storage systems increasingly rely on parallel architectures where processing and storage load is distributed within a cluster of nodes. The necessity for high-bandwidth data links has made optical communication a critical constituent of modern information systems and silicon the leading platform for creating the necessary optical components. While silicon is arguably the most extensively studied material in history, one of its most important attributes, an analysis of its capacity to carry optical information, has not been reported. The calculation of the information capacity of silicon is complicated by nonlinear losses, phenomena that emerge in optical nanowires as a result of the concentration of optical power in a small geometry. Nonlinear losses are absent in silica glass optical fiber and other common communication channels. While nonlinear loss in silicon is well known, noise and fluctuations that arise from it have never been considered. Here we report sources of fluctuations...

  8. Mid-infrared silicon photonics

    OpenAIRE

    Green, W. M. J.; Kuyken, B.; X. Liu; M. A. Van Camp; S. Assefa; D. M. Gill; T. Barwicz; Shank, S. M.; Y.A. Vlasov; Osgood Jr, R. M.; Baets, R.; Roelkens, G.

    2013-01-01

    A mid-infrared silicon nanophotonic integrated circuit platform can have broad impact upon environmental monitoring, personalized healthcare, and public safety applications. Development of various mid-IR components, including optical parametric amplifiers, sources, modulators, and detectors, is reviewed.

  9. Social Networks in Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph; Leu

    2006-01-01

      Social network is a dominant, distinguishing characteristic of Silicon Valley. Because innovation entails coping with a high degree of uncertainty,such innovation is particularly dependent on networks.……

  10. SILICONE RUBBER MOULDS FOR FOOTWEAR

    Directory of Open Access Journals (Sweden)

    Cornelia LUCA

    2013-05-01

    Full Text Available The leather confections industry uses the silicone rubber moulds for the symbols,notices and models stamping on the footwear or morocco goods parts. The paper presents somecontributions in this kind of devices manufacturing technology

  11. SILICONE RUBBER MOULDS FOR FOOTWEAR

    OpenAIRE

    LUCA Cornelia; Rãzvan MOCANU

    2013-01-01

    The leather confections industry uses the silicone rubber moulds for the symbols,notices and models stamping on the footwear or morocco goods parts. The paper presents somecontributions in this kind of devices manufacturing technology

  12. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  13. Molecular dynamics studies of the bonding properties of amorphous silicon nitride coatings on crystalline silicon

    OpenAIRE

    Butler, K.T.; Lamers, M.P.W.E.; Weeber, A. W.; Harding, J. H.

    2011-01-01

    In this paper we present molecular dynamics simulations of silicon nitride, both in bulk and as an interface to crystalline silicon. We investigate, in particular, the bonding structure of the silicon nitride and analyze the simulations to search for de- fective geometries which have been identified as potential charge carrier traps when silicon nitride forms an interface with silicon semiconductors. The simulations reveal how the bonding patterns in silicon nitride are dependent upon the sto...

  14. Silicone nanocomposite coatings for fabrics

    Science.gov (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  15. Silicone-Rubber Stitching Seal

    Science.gov (United States)

    Wang, D. S.

    1985-01-01

    Fabric products protected from raveling by coating threads and filling stitching holes with silicone rubber. Uncored silicone rubber applied to stitching lines with air-pressurized sealant gun. Next, plastic release film placed on coated side, and blanket flipped over so release film lies underneath. Blanket then bagged and adhesive cured under partial vacuum of about 3.5 psi or under pressure. Applications include balloons, parachutes, ultralight aircraft, sails, rescue harnesses, tents, or other fabric products highly stressed in use.

  16. Silicon Photonics: The Inside Story

    OpenAIRE

    Jalali, Bahram

    2008-01-01

    The electronic chip industry embodies the height of technological sophistication and economics of scale. Fabricating inexpensive photonic components by leveraging this mighty manufacturing infrastructure has fueled intense interest in silicon photonics. If it can be done economically and in an energy efficient manner, empowering silicon with optical functionality will bring optical communications to the realm of computers where limitations of metallic interconnects are threatening the industr...

  17. Silicon microcantilevers with MOSFET detection

    OpenAIRE

    Tosolini, Giordano; Villanueva, G.; Pérez Murano, Francesc; Bausells, Joan

    2010-01-01

    We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have been fabricated by As implantation to obtain shallow PN junctions. The cantilevers have been oriented on the non-standard (1 0 0) crystallographic direction of silicon, to maximize the stress response of the NMOS transistors. The force sensitiv...

  18. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  19. Deposited low temperature silicon GHz modulator

    CERN Document Server

    Lee, Yoon Ho Daniel; Lipson, Michal

    2013-01-01

    The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This discrepancy is a result of silicon photonics's requirement for a single-crystalline silicon (c-Si) layer and a thick undercladding for optical guiding that bulk silicon wafers to not provide. While the undercladding problem can be partially addressed by substrate removal techniques, the complexity of co-integrating photonics with state-of-the-art transistors and real estate competition between electronics and photonics remain problematic. We show here a platform for deposited GHz silicon photonics based on polycrystalline silicon with high optical quality suitable for high performance electro-optic devices. We demonstrate 3 Gbps polysilicon electro-optic modulator fabricated on a deposited polysilicon layer fully compatible with CMOS backend integration. These results open up an arr...

  20. Devices and architectures for large-scale integrated silicon photonics circuits

    Science.gov (United States)

    Beausoleil, Raymond G.; Faraon, Andrei; Fattal, David; Fiorentino, Marco; Peng, Zhen; Santori, Charles

    2011-01-01

    We present DWDM nanophotonics architectures based on microring resonator modulators and detectors. We focus on two implementations: an on chip interconnect for multicore processor (Corona) and a high radix network switch (HyperX). Based on the requirements of these applications we discuss the key constraints on the photonic circuits' devices and fabrication techniques as well as strategies to improve their performance.

  1. Silicon Tetrafluoride on Io

    CERN Document Server

    Schaefer, L; Schaefer, Laura

    2005-01-01

    Silicon tetrafluoride (SiF4) is observed in terrestrial volcanic gases and is predicted to be the major F - bearing species in low temperature volcanic gases on Io (Schaefer and Fegley, 2005b). SiF4 gas is also a potential indicator of silica-rich crust on Io. We used F/S ratios in terrestrial and extraterrestrial basalts, and gas/lava enrichment factors for F and S measured at terrestrial volcanoes to calculate equilibrium SiF4/SO2 ratios in volcanic gases on Io. We conclude that SiF4 can be produced at levels comparable to the observed NaCl/SO2 gas ratio. We also considered potential loss processes for SiF4 in volcanic plumes and in Io's atmosphere including ion-molecule reactions, electron chemistry, photochemistry, reactions with the major atmospheric constituents, and condensation. Photochemical destruction (tchem ~ 266 days) and/or condensation as Na2SiF6 (s) appear to be the major sinks for SiF4. We recommend searching for SiF4 with infrared spectroscopy using its 9.7 micron band as done on Earth.

  2. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  3. Palladium interaction with silicon carbide

    International Nuclear Information System (INIS)

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC–5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2 phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2 phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOy phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation

  4. Palladium interaction with silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, M., E-mail: Marialuisa.Gentile@manchester.ac.uk [Centre for Nuclear Energy Technology (C-NET), School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M13 9PL (United Kingdom); Xiao, P. [Materials Science Centre, School of Materials, The University of Manchester, Manchester M13 9PL (United Kingdom); Abram, T. [Centre for Nuclear Energy Technology (C-NET), School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-07-15

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC–5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd{sub 3}Si and SiO{sub 2} phases, while the second peak and the third peak are correlated with the formation of Pd{sub 2}Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO{sub 2} phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiC{sub x}O{sub y} phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  5. Palladium interaction with silicon carbide

    Science.gov (United States)

    Gentile, M.; Xiao, P.; Abram, T.

    2015-07-01

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC-5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2 phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2 phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOy phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  6. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  7. Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances.

    Science.gov (United States)

    van Sebille, Martijn; Allebrandi, Jort; Quik, Jim; van Swaaij, René A C M M; Tichelaar, Frans D; Zeman, Miro

    2016-12-01

    We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step. PMID:27492439

  8. Indentation fatigue in silicon nitride, alumina and silicon carbide ceramics

    Indian Academy of Sciences (India)

    A K Mukhopadhyay

    2001-04-01

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker’s microhardness tester at various loads in the range 1–20 N. Subsequently, the gradual evolution of the damage was characterized using an optical microscope in conjunction with the image analysing technique. The materials were classified in the order of the decreasing resistance against repeated indentation fatigue at the highest applied load of 20 N. It was further shown that there was a strong influence of grain size on the development of resistance against repeated indentation fatigue on the same spot. Finally, the poor performance of the sintered silicon carbide was found out to be linked to its previous thermal history.

  9. Silicon Heat Pipe Array

    Science.gov (United States)

    Yee, Karl Y.; Ganapathi, Gani B.; Sunada, Eric T.; Bae, Youngsam; Miller, Jennifer R.; Beinsford, Daniel F.

    2013-01-01

    Improved methods of heat dissipation are required for modern, high-power density electronic systems. As increased functionality is progressively compacted into decreasing volumes, this need will be exacerbated. High-performance chip power is predicted to increase monotonically and rapidly with time. Systems utilizing these chips are currently reliant upon decades of old cooling technology. Heat pipes offer a solution to this problem. Heat pipes are passive, self-contained, two-phase heat dissipation devices. Heat conducted into the device through a wick structure converts the working fluid into a vapor, which then releases the heat via condensation after being transported away from the heat source. Heat pipes have high thermal conductivities, are inexpensive, and have been utilized in previous space missions. However, the cylindrical geometry of commercial heat pipes is a poor fit to the planar geometries of microelectronic assemblies, the copper that commercial heat pipes are typically constructed of is a poor CTE (coefficient of thermal expansion) match to the semiconductor die utilized in these assemblies, and the functionality and reliability of heat pipes in general is strongly dependent on the orientation of the assembly with respect to the gravity vector. What is needed is a planar, semiconductor-based heat pipe array that can be used for cooling of generic MCM (multichip module) assemblies that can also function in all orientations. Such a structure would not only have applications in the cooling of space electronics, but would have commercial applications as well (e.g. cooling of microprocessors and high-power laser diodes). This technology is an improvement over existing heat pipe designs due to the finer porosity of the wick, which enhances capillary pumping pressure, resulting in greater effective thermal conductivity and performance in any orientation with respect to the gravity vector. In addition, it is constructed of silicon, and thus is better

  10. Gallium-Catalyzed Silicon Oxide Nanowire Growth

    Institute of Scientific and Technical Information of China (English)

    Zheng Wei Pan; Sheng Dai; Douglas H.Lowndes

    2005-01-01

    Silicon oxide nanowires tend to assemble into various complex morphologies through a metalcatalyzed vapor-liquid-solid (VLS) growth process. This article summarizes our recent efforts in the controlled growth of silicon oxide nanowire assemblies by using molten gallium as the catalyst and silicon wafer,SiO powder, or silane (SiH4) as the silicon sources. Silicon oxide nanowire assemblies with morphologies of carrotlike, cometlike, gourdlike, spindlelike, badmintonlike, sandwichlike, etc. were obtained. Although the morphologies of the nanowire assemblies are temperature- and silicon source-dependent, they share similar structural and compositional features: all the assemblies contain a microscale spherical liquid Ga ball and a highly aligned, closely packed amorphous silicon oxide nanowire bunch. The Ga-catalyzed silicon oxide nanowire growth reveals several interesting new nanowire growth phenomena that expand our knowledge of the conventional VLS nanowire growth mechanism.

  11. Belle II Silicon Vertex Detector

    CERN Document Server

    Mohanty, Gagan B

    2015-01-01

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by a vertex detector, which comprises two layers of pixelated silicon detector and four layers of silicon vertex detector. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector that is aimed to be commissioned towards the middle of 2017.

  12. Direct band gap silicon allotropes.

    Science.gov (United States)

    Wang, Qianqian; Xu, Bo; Sun, Jian; Liu, Hanyu; Zhao, Zhisheng; Yu, Dongli; Fan, Changzeng; He, Julong

    2014-07-16

    Elemental silicon has a large impact on the economy of the modern world and is of fundamental importance in the technological field, particularly in solar cell industry. The great demand of society for new clean energy and the shortcomings of the current silicon solar cells are calling for new materials that can make full use of the solar power. In this paper, six metastable allotropes of silicon with direct or quasidirect band gaps of 0.39-1.25 eV are predicted by ab initio calculations at ambient pressure. Five of them possess band gaps within the optimal range for high converting efficiency from solar energy to electric power and also have better optical properties than the Si-I phase. These Si structures with different band gaps could be applied to multiple p-n junction photovoltaic modules. PMID:24971657

  13. A silicon tracker for Christmas

    CERN Multimedia

    2008-01-01

    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  14. SILICON REFINING BY VACUUM TREATMENT

    Directory of Open Access Journals (Sweden)

    André Alexandrino Lotto

    2014-12-01

    Full Text Available This work aims to investigate the phosphorus removal by vacuum from metallurgical grade silicon (MGSi (98.5% to 99% Si. Melting experiments were carried out in a vacuum induction furnace, varying parameters such as temperature, time and relation area exposed to the vacuum / volume of molten silicon. The results of chemical analysis were obtained by inductively coupled plasma (ICP, and evaluated based on thermodynamic and kinetic aspects of the reaction of vaporization of the phosphorus in the silicon. The phosphorus was decreased from 33 to approximately 1.5 ppm after three hours of vacuum treatment, concluding that the evaporation step is the controlling step of the process for parameters of temperature, pressure and agitation used and refining by this process is technically feasible.

  15. Belle II silicon vertex detector

    Science.gov (United States)

    Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, Ti.; Baroncelli, To.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Enami, K.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C. W.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Maki, M.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Suzuki, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, L.; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.

    2016-09-01

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

  16. Silicon Photonics: The Inside Story

    CERN Document Server

    Jalali, Bahram

    2008-01-01

    The electronic chip industry embodies the height of technological sophistication and economics of scale. Fabricating inexpensive photonic components by leveraging this mighty manufacturing infrastructure has fueled intense interest in silicon photonics. If it can be done economically and in an energy efficient manner, empowering silicon with optical functionality will bring optical communications to the realm of computers where limitations of metallic interconnects are threatening the industry's future. The field is making stunning progress and stands to have a bright future, as long as the community recognizes the real challenges, and maintains an open mind with respect to its applications. This talk will review recent 'game changing' developments and discuss promising applications beyond data communication. It will conclude with recent observation of extreme-value statistical behavior in silicon photonics, a powerful example of how scientific discoveries can unexpectedly emerge in the course of technology d...

  17. 360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals

    Institute of Scientific and Technical Information of China (English)

    YANG Lin-lin; GUO Heng-qun; ZENG You-hua; WANG Qi-ming

    2006-01-01

    Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescence(PL) from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanocrystals was discussed.

  18. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  19. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.;

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  20. Surface texturing of multicrystalline silicon solar cells

    OpenAIRE

    L.A. Dobrzański; A. Drygała

    2008-01-01

    Purpose: The aim of the paper is to elaborate a laser method of texturization multicrystalline silicon. The main reason for taking up the research is that most conventional methods used for texturization of monocrystalline silicon are ineffective when applied for texturing multicrystalline silicon. This is related to random distribution of grains of different crystalographic orientations on the surface of multicrystalline silicon.Design/methodology/approach: The topography of laser ...

  1. Mid-IR heterogeneous silicon photonics

    OpenAIRE

    Gunther Roelkens; Utsav Dave; Alban Gassenq; Nannicha Hattasan; Chen Hu; Bart Kuyken; Francois Leo; Aditya Malik; Muhammad Muneeb; Eva Ryckeboer; Sarah Uvin; Zeger Hens; Baets, Roel G.; Yosuke Shimura; Federica Gencarelli

    2013-01-01

    In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited t...

  2. Silicon nanocrystal inks, films, and methods

    Energy Technology Data Exchange (ETDEWEB)

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  3. Silicon sources for rice crop

    Directory of Open Access Journals (Sweden)

    Pereira Hamilton Seron

    2004-01-01

    Full Text Available Although silicon is not an essential nutrient, its application is beneficial for plant growth and development. To evaluate silicon sources in relation to agronomic efficiency and economic viability in rice crops (Oryza sativa L., a greenhouse experiment was conducted, Quartzipsamment soil, in a completely randomized experimental design (n = 4. Treatments were 12 silicon sources and a control. Silicon was applied at the rate of 125 kg Si ha-1. Data were compared to a standard response curve for Si using the standard source Wollastonite at rates of 0, 125, 250, 375, and 500 kg Si ha-1. All treatments received CaCO3 and MgCO3 to balance pH, Ca and Mg. One hundred and fifty days after sowing, evaluations on dry matter yield in the above-ground part of plants, grain yield, and Si contents in the soil and plant tissues were performed. Wollastonite had linear response, increasing silicon in the soil and plants with increasing application rates. Differences between silicon sources in relation to Si uptake were observed. Phosphate slag provided the highest Si uptake, followed by Wollastonite and electric furnace silicates which however, did not show differed among themselves. The highest Si accumulation in grain was observed for stainless steel, which significantly differed from the control, silicate clay, Wollastonite, and AF2 (blast furnace of the company 2 slag. Silicate clay showed the lowest Si accumulation in grain and did not differ from the control, AF2 slag, AF1 slag, schist ash, schist, and LD4 (furnace steel type LD of the company 4 slag.

  4. Epitaxial Growth of High-Quality Silicon Films on Double-Layer Porous Silicon

    Institute of Scientific and Technical Information of China (English)

    黄宜平; 竺士炀; 李爱珍; 王瑾; 黄靖云; 叶志镇

    2001-01-01

    The epitaxial growth of a high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction,cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.

  5. Silicon technology compatible photonic molecules for compact optical signal processing

    Energy Technology Data Exchange (ETDEWEB)

    Barea, Luis A. M., E-mail: barea@ifi.unicamp.br; Vallini, Felipe; Jarschel, Paulo F.; Frateschi, Newton C. [Device Research Laboratory, Applied Physics Department, “GlebWataghin” Physics Institute, University of Campinas–UNICAMP, 13083-859 Campinas, SP (Brazil)

    2013-11-11

    Photonic molecules (PMs) based on multiple inner coupled microring resonators allow to surpass the fundamental constraint between the total quality factor (Q{sub T}), free spectral range (FSR), and resonator size. In this work, we use a PM that presents doublets and triplets resonance splitting, all with high Q{sub T}. We demonstrate the use of the doublet splitting for 34.2 GHz signal extraction by filtering the sidebands of a modulated optical signal. We also demonstrate that very compact optical modulators operating 2.75 times beyond its resonator linewidth limit may be obtained using the PM triplet splitting, with separation of ∼55 GHz.

  6. Microdefects in cast multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, E.; Klinger, D.; Bergmann, S. [Inst. of Crystal Growth Berlin (Germany)

    1995-08-01

    The microdefect etching behavior of cast multicrystalline BAYSIX and SILSO samples is mainly the same as that of EFG silicon, in spite of the very different growth parameters applied to these two techniques and the different carbon contents of the investigated materials. Intentional decorating of mc silicon with copper, iron and gold did not influence the results of etching and with help of infrared transmission microscopy no metal precipitates at the assumed microdefects could be established. There are many open questions concerning the origin of the assumed, not yet doubtless proved microdefects.

  7. Silicone breast implants and platinum.

    Science.gov (United States)

    Wixtrom, Roger N

    2007-12-01

    Platinum, in a specific form, is used as a catalyst in the cross-linking reactions of the silicone gel and elastomer in breast implants. After manufacture, it remains in the devices at low-parts-per-million levels. Potential concerns have been raised as to whether this platinum might diffuse from silicone breast implants into the body and result in adverse health effects. The weight of evidence indicates that the platinum present is in its most biocompatible (zero valence) form, and the very minute levels (<0.1 percent) that might diffuse from the implants do not represent a significant health risk to patients. PMID:18090821

  8. Silicon Geiger mode avalanche photodiodes

    Institute of Scientific and Technical Information of China (English)

    M. Mazzillo; S. Billotta; G. Bonanno; A. Campisi; L. Cosentino; P. Finocchiaro; F. Musumeci; S.Privitera; S. Tudisco; G. Condorelli; D. Sanfilippo; G. Fallica; E. Sciacca; S. Aurite; S. Lombardo; E. Rlmini; M. Belluso

    2007-01-01

    In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes (GMAP) fabricated by silicon standard planar technology. Low dark count rates, negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields, as telecommunications and nuclear medical imaging.

  9. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  10. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn;

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...... definition on a sub 30-nm scale in combination with a deep vertical silicon etch of the order of ~300 nm. The nanoimprint method offers a cost-efficient parallel fabrication process with state-of-the-art replication fidelity, comparable to direct electron beam writing....

  11. Palladium interaction with silicon carbide

    OpenAIRE

    M. Gentile, P. Xiao, T. Abram

    2015-01-01

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide...

  12. Large volume cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

    2009-12-15

    We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

  13. Surgical management of silicone mastitis.

    Science.gov (United States)

    Wustrack, K O; Zarem, H A

    1979-02-01

    The results of the operative treatment of 22 cases of silicone mastitis are presented. Moderate involvement can usually be managed successfully by local excision of the masses, or by a subcutaneous mastectomy with later reconstruction. Patients with severe skin infiltration and/or pectoral muscle involvement are prone to complications, however, and we now believe an aggressive approach--such as a complete mastectomy with nipple banking and excision of the infiltrated muscle, might be best. This would allow the later reconstruction to proceed in relatively uninvolved tissue, and prevent the problems of recurrent inflammation from placing bag-gel prostheses in a residual bed of silicone-infiltrated tissue. PMID:570284

  14. Erbium diffusion in silicon dioxide

    International Nuclear Information System (INIS)

    Erbium diffusion in silicon dioxide layers prepared by magnetron sputtering, chemical vapor deposition, and thermal growth has been investigated by secondary ion mass spectrometry, and diffusion coefficients have been extracted from simulations based on Fick's second law of diffusion. Erbium diffusion in magnetron sputtered silicon dioxide from buried erbium distributions has in particular been studied, and in this case a simple Arrhenius law can describe the diffusivity with an activation energy of 5.3±0.1 eV. Within a factor of two, the erbium diffusion coefficients at a given temperature are identical for all investigated matrices.

  15. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  16. Growth model of silicon nanoislands on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Krivulin, N. O., E-mail: krivulin@phys.unn.ru; Pavlov, D. A.; Shilyaev, P. A. [Lobachevsky University of Nizhni Novgorod (Russian Federation)

    2013-12-15

    A growth model of silicon nanoislands on silicon by molecular-beam epitaxy is refined. It is shown that silicon islands grow due to the diffusion of material from the wetting layer, with the contribution from direct hits of atoms to this growth being nearly zero.

  17. Analysis of silicon transporters in turfgrass species

    Science.gov (United States)

    Silicon is an abundant element on earth and is also known to be beneficial as an amendment in some crops such as rice. Despite its abundance in many soils, accumulation of silicon in plants is species-specific and can be widely different. It has been shown that the genes responsible for silicon upta...

  18. 21 CFR 172.480 - Silicon dioxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.480 Silicon dioxide. The food additive silicon dioxide may be safely used in food...

  19. 21 CFR 573.940 - Silicon dioxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Silicon dioxide. 573.940 Section 573.940 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed...

  20. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Voorthuyzen, J.A.; Bergveld, P.

    1991-01-01

    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile s

  1. Bottom-up approach to silicon nanoelectronics

    OpenAIRE

    Mizumita, Hiroshi; Oda, S

    2005-01-01

    Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/5920) International audience This paper presents a brief review of our recent work investigating a novel bottom-up approach to realize silicon based nanoelectronics. We discuss fabrication technique, electronic properties and device applications of silicon nanodots as a building block for nanoscale silicon devices.

  2. 21 CFR 878.4025 - Silicone sheeting.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Silicone sheeting. 878.4025 Section 878.4025 Food... DEVICES GENERAL AND PLASTIC SURGERY DEVICES Surgical Devices § 878.4025 Silicone sheeting. (a) Identification. Silicone sheeting is intended for use in the management of closed...

  3. Silicon vertex detector for superheavy elements identification

    Directory of Open Access Journals (Sweden)

    Bednarek A.

    2012-07-01

    Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

  4. Silicon carbide as platform for energy applications

    DEFF Research Database (Denmark)

    Syväjärvi, Mikael; Jokubavicius, Valdas; Sun, Jianwu;

    Silicon carbide is emerging as a novel material for a range of energy and environmental technologies. Previously, silicon carbide was considered as a material mainly for transistor applications. We have initiated the use of silicon carbide material towards optoelectronics in general lighting...

  5. The Silicon-To-Silicon Anodic Bonding Using Sputter Deposited Intermediate Glass Layer

    OpenAIRE

    TIWARI, R; Chandra, S.

    2011-01-01

    Glass-to-silicon anodic bonding is an attractive process for packaging of microelectronics devices and Micro-electro-mechanical Systems (MEMS). Silicon to silicon anodic bonding can also be accomplished by incorporating an intermediate glass layer. In the present work, silicon-to-silicon anodic bonding has been studied with an intermediate borosilicate glass layer deposited by RF magnetron sputtering process. The bonding was carried out at low dc voltage of about 48 V at 400 °C. Surface rough...

  6. Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

    OpenAIRE

    Voz Sánchez, Cristóbal; Martin, I.; Orpella, A.; Puigdollers i González, Joaquim; Vetter, M.; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi

    2003-01-01

    In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the quasi-steady-state photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on n- and p-type float zone silicon wafers. The best results were obtained with amorphous silicon films, which allowed ...

  7. Silicon microcantilevers as sensors

    Science.gov (United States)

    Dhayal, Babita

    This work focuses on the general use of microcantilever arrays for parallel detection of multiple analytes and understanding the mechanics behind it. The system employs an array of eight silicon micro cantilevers and has the capability of measuring cantilever deflection due to differential surface stress generated as well as frequency change due to added mass in both gaseous and liquid environments. In this work, we move beyond antibody-antigen binding systems and demonstrate that short peptides ligands can be used to efficiently capture Bacillus subtilis and Bacillus anthracis spores in liquids, given that specific peptides corresponding to the particular bacteria are synthesized. These peptide functionalized cantilever array can be stored under ambient conditions for days without loss of functionality, making then suitable for in-field use. A detailed experimental protocol, optimizing every step is presented. Applications of this technology can serve as a platform for the detection of pathogenic organisms including biowarfare agents. The dominant physical phenomena producing surface-stress during molecular binding are difficult to specify a priori. Differential surface stress generated due to adsorption of small molecules on gold coated cantilevers is measured to gain insight into the mechanisms involved in the self-assembly process and into the origin of associated the surface stress. Our experiments indicate that the contribution from inter-molecular Lennard-Jones interactions and binding energy between the end group and the functionalized surface play a minimal role in the development of surface stress. Electrostatic repulsion between adsorbed species stress and Changes in the electronic structure of the underlying gold substrate play an important role in surface stress generation. To achieve higher sensitivity in the performance of cantilever sensors, optimized cantilevers of different dimensions are required. By adjusting cantilever dimensions, it is

  8. Silicon-based nanochannel glucose sensor

    CERN Document Server

    Wang, Xihua; Gibney, Katherine A; Erramilli, Shyamsunder; Mohanty, Pritiraj

    2008-01-01

    Silicon nanochannel biological field effect transistors have been developed for glucose detection. The device is nanofabricated from a silicon-on-insulator wafer with a top-down approach and surface functionalized with glucose oxidase. The differential conductance of silicon nanowires, tuned with source-drain bias voltage, is demonstrated to be sensitive to the biocatalyzed oxidation of glucose. The glucose biosensor response is linear in the 0.5-8 mM concentration range with 3-5 min response time. This silicon nanochannel-based glucose biosensor technology offers the possibility of high density, high quality glucose biosensor integration with silicon-based circuitry.

  9. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  10. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa

    2014-08-28

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  11. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  12. Diamond deposition on siliconized stainless steel

    International Nuclear Information System (INIS)

    Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

  13. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  14. Methods for producing silicon carbide fibers

    Science.gov (United States)

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  15. Silicon carbide fibers and articles including same

    Science.gov (United States)

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  16. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  17. Behavior of dislocations in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sumino, Koji [Nippon Steel Corp., Chiba Prefecture (Japan)

    1995-08-01

    A review is given of dynamic behavior of dislocations in silicon on the basis of works of the author`s group. Topics taken up are generation, motion and multiplication of dislocations as affected by oxygen impurities and immobilization of dislocations due to impurity reaction.

  18. Let’s talk silicon

    Science.gov (United States)

    While silicon (Si) has been a known plant nutrient for centuries, how plants use this element is still poorly understood. Researchers have identified how plants acquire Si from the environment and transport the element to all plant tissues, including roots, stems, petioles, leaves and flowers. We ...

  19. Simulation of Silicon Photomultiplier Signals

    NARCIS (Netherlands)

    Seifert, Stefan; van Dam, Herman T.; Huizenga, Jan; Vinke, Ruud; Dendooven, Peter; Loehner, Herbert; Schaart, Dennis R.

    2009-01-01

    In a silicon photomultiplier (SiPM), also referred to as multi-pixel photon counter (MPPC), many Geiger-mode avalanche photodiodes (GM-APDs) are connected in parallel so as to combine the photon counting capabilities of each of these so-called microcells into a proportional light sensor. The dischar

  20. Simulation of silicon photomultiplier signals

    NARCIS (Netherlands)

    Seifert, S.; Van Dam, H.T.; Huizenga, J.; Vinke, R.; Dendooven, P.; Löhner, H.; Schaart, D.R.

    2009-01-01

    In a silicon photomultiplier (SiPM), also referred to as multi-pixel photon counter (MPPC), many Geiger-mode avalanche photodiodes (GM-APDs) are connected in parallel so as to combine the photon counting capabilities of each of these so-called microcells into a proportional light sensor. The dischar

  1. Photoactivation of silicon quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Lockwood, R., E-mail: rossl@ualberta.c [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada); McFarlane, S. [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada); Rodriguez Nunez, J.R. [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada); Wang, X.Y. [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada); Veinot, J.G.C. [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada); Meldrum, A. [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada)

    2011-07-15

    We show that free-standing silicon quantum dots (QDs) can be photoactivated by blue or UV optical irradiation. The luminescence intensity increases by an order of magnitude for irradiation times of several minutes under moderate optical power. The cut-off energy for photoactivation is between 2.1 and 2.4 eV, not very different from the activation energy for hydrogen dissociation from bulk silicon surfaces. We propose the mechanism for this effect is associated with silicon-hydride bond breaking and the subsequent oxidation of dangling bonds. This phenomenon could be used to 'write' luminescent quantum dots into pre-determined arrays. - Research highlights: {yields}Laser light causes increased photoluminescence intensity in silicon quantum dots. {yields} The photoactivation process is effective for wavelengths of 514 nm and shorter. {yields} Hydrogen bound to the Si-QDs is replaced by oxygen in a two-step process. {yields} Patterning is possible but limited by physical dispersion of Si-QDs.

  2. Vacuum Refining of Molten Silicon

    Science.gov (United States)

    Safarian, Jafar; Tangstad, Merete

    2012-12-01

    Metallurgical fundamentals for vacuum refining of molten silicon and the behavior of different impurities in this process are studied. A novel mass transfer model for the removal of volatile impurities from silicon in vacuum induction refining is developed. The boundary conditions for vacuum refining system—the equilibrium partial pressures of the dissolved elements and their actual partial pressures under vacuum—are determined through thermodynamic and kinetic approaches. It is indicated that the vacuum removal kinetics of the impurities is different, and it is controlled by one, two, or all the three subsequent reaction mechanisms—mass transfer in a melt boundary layer, chemical evaporation on the melt surface, and mass transfer in the gas phase. Vacuum refining experimental results of this study and literature data are used to study the model validation. The model provides reliable results and shows correlation with the experimental data for many volatile elements. Kinetics of phosphorus removal, which is an important impurity in the production of solar grade silicon, is properly predicted by the model, and it is observed that phosphorus elimination from silicon is significantly increased with increasing process temperature.

  3. The Future of Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ By the end of 1984, Silicon Valley was going through the down cycle fol lowing the PC boom. A hundred PC companies wanted just 10 percent of the market, wanting to strike it rich, as rich as the Apple IPO (Initial Public Of fering) -the Google celebrity IPO of its day.

  4. Silicon Nano-Photonic Devices

    DEFF Research Database (Denmark)

    Pu, Minhao

    to microwave systems and biosensing devices. An ultra-low loss inverse taper coupler for interfacing silicon ridge waveguides and optical bers is introduced and insertion losses of less than 1 dB are achieved for both transverse-electric (TE) and transversemagnetic (TM) polarizations. Integrated...

  5. Applications of passivated silicon detectors

    Science.gov (United States)

    Kyung, Richard; Park, Chan Ho

    2012-03-01

    We can postulate that dark matter are WIMPS, more specifically, Majorana particles called neutralinos floating through space. Upon neutralino-neutralino annihilation, they create a greater burst of other particles into space: these being all kinds of particles including anti-deuterons which are the indications of the existence of dark matter. For the study of the applications of passivated silicon detectors, this paper shows following procedures in two categories. Painting on little pieces of silicon (Polyimid and Boxcar Red) :Took clean paint brush and painted on Polyimid and Boxcar red samples onto little pieces of sample silicon and dried for a certain number of hours in different conditions. Cooling test : usually done in 7 cycles, cool until usually -35 degrees or -40 degrees Celsius with thermoelectric cooler, dry out, evapate the moisture in the fume hood, take pictures with the microscope and check for irregularities every 1, 4 and 7 times. The results show us how the passivated silicon will act in the real experiment--the vacuum chamber and x-rays (from the radioactive source), and different atmospheric pressures simulate what it will be like in space.

  6. Iron contamination in silicon technology

    Science.gov (United States)

    Istratov, A. A.; Hieslmair, H.; Weber, E. R.

    This article continues the review of fundamental physical properties of iron and its complexes in silicon (Appl. Phys. A 69, 13 (1999)), and is focused on ongoing applied research of iron in silicon technology. The first section of this article presents an analysis of the effect of iron on devices, including integrated circuits, power devices, and solar cells. Then, sources of unintentional iron contamination and reaction paths of iron during device manufacturing are discussed. Experimental techniques to measure trace contamination levels of iron in silicon, such as minority carrier lifetime techniques (SPV, μ-PCD, and ELYMAT), deep-level transient spectroscopy (DLTS), total X-ray fluorescence (TXRF) and vapor-phase decomposition TXRF (VPD-TXRF), atomic absorption spectroscopy (AAS), mass spectrometry and its modifications (SIMS, SNMS, ICP-MS), and neutron activation analysis (NAA) are reviewed in the second section of the article. Prospective analytical tools, such as heavy-ion backscattering spectroscopy (HIBS) and synchrotron-based X-ray microprobe techniques (XPS, XANES, XRF) are briefly discussed. The third section includes a discussion of the present achievements and challenges of the electrochemistry and physics of cleaning of silicon wafers, with an emphasis on removal of iron contamination from the wafers. Finally, the techniques for gettering of iron are presented.

  7. Mesoporous Silicon-Based Anodes

    Science.gov (United States)

    Peramunage, Dharmasena

    2015-01-01

    For high-capacity, high-performance lithium-ion batteries. A new high-capacity anode composite based on mesoporous silicon is being developed. With a structure that resembles a pseudo one-dimensional phase, the active anode material will accommodate significant volume changes expected upon alloying and dealloying with lithium (Li).

  8. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  9. Physiological removal of silicon from bioactive glass

    Energy Technology Data Exchange (ETDEWEB)

    Lai, W. [Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Bioengineering; Garino, J. [Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Orthopaedic Surgery; Flaitz, C.M. [Texas Univ., Houston, TX (United States). Div. of Oral and Maxillofacial Pathology; Ducheyne, P. [Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Bioengineering; Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Orthopaedic Surgery

    2001-07-01

    Bioactive glass granules were implanted in the paraspinal muscle and tibiae of rabbits in order to determine the pathway of the silicon released from bioactive glass in vivo. We traced and quantified the silicon released by obtaining 24-hour urine samples, as well as blood samples for up to 7 months after implantation. Furthermore, local muscle and bone tissue as well as the following organs were resected for chemical and histopathological analyses: brain, heart, kidney, liver, lung, lymph nodes, spleen, and thymus. The concentrations of silicon found in the urine were well below saturation and no accumulation of silicon was found in the major organs after silicon excretion had halted. The removal of silicon from the body matrix was slower overall compared to an intramuscular site, taking a total of 24 weeks versus 19 weeks to complete silicon removal, respectively. (orig.)

  10. Aluminum gettering in single and multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    McHugo, S.A.; Hieslmair, H.; Weber, E.R. [Univ. of California, Berkeley, CA (United States)

    1995-08-01

    Al gettering has been performed on integrated circuit (I.C.) quality silicon and a variety of single and multicrystalline silicon solar cell materials. The minority carrier diffusion length, Ln, has been used to quantify the gettering response. Vast differences in response to the Al gettering treatment are observed between the I.C. quality silicon and the solar cell materials. The I.C. silicon generally responds well while the solar cell silicon performance progressively degrades with increasing gettering temperature. Preliminary data shows that by performing a Rapid Thermal Annealing treatment prior to the Al gettering, an improved or further degraded Ln emerges in solar cell material depending on the material`s manufacturer. We explain these observed phenomena by suggesting that Al gettering in solar cell silicon is an impurity emission-limited process while for I.C. quality silicon it is diffusion limited.

  11. Gamma radiation effects on silicon photonic waveguides.

    Science.gov (United States)

    Grillanda, Stefano; Singh, Vivek; Raghunathan, Vivek; Morichetti, Francesco; Melloni, Andrea; Kimerling, Lionel; Agarwal, Anuradha M

    2016-07-01

    To support the use of integrated photonics in harsh environments, such as outer space, the hardness threshold to high-energy radiation must be established. Here, we investigate the effects of gamma (γ) rays, with energy in the MeV-range, on silicon photonic waveguides. By irradiation of high-quality factor amorphous silicon core resonators, we measure the impact of γ rays on the materials incorporated in our waveguide system, namely amorphous silicon, silicon dioxide, and polymer. While we show the robustness of amorphous silicon and silicon dioxide up to an absorbed dose of 15 Mrad, more than 100× higher than previous reports on crystalline silicon, polymer materials exhibit changes with doses as low as 1 Mrad. PMID:27367099

  12. Tunable silicon CROW delay lines

    Science.gov (United States)

    Morichetti, Francesco; Canciamilla, Antonio; Torregiani, Matteo; Ferrari, Carlo; Melloni, Andrea; Martinelli, Mario

    2010-05-01

    Tunable coupled resonator optical waveguides (CROWs) are powerful and versatile devices that can be used to dynamically control the delay of optical data streams on chip. In this contribution we show that CROW delay lines fabricated on a silicon on insulator (SOI) platform are suitable for applications in the emerging scenario of optical systems at 100 Gbit/s. Issues concerning technology, design, limits and applications of SOI CROWs are discussed. The performances of silicon CROW delay lines activated by thermal tuning are compared to those of glass CROW in terms of power consumption, thermal crosstalk and reconfiguration speed. The continuous delay of 10-ps long optical pulses by 8 bit length is demonstrated by using a silicon CROW with a bandwidth of 87 GHz and made of 12 RRs. At 100 Gbit/s this structure provides comparable figures of merit (fractional delay of 0.75 bit/RR and fractional loss of 0.7 dB per bit-delay) of state-of-the art glass CROW operating at 10 Gbit/s, yet the area of the latter being three order of magnitude larger. The compatibility of silicon CROW with the emerging 100 Gbit/s systems is demonstrated by showing error-free phase-preserving propagation of a 100 Gbit/s return-to-zero (RZ) polarization-division-multiplexing (PolDM) differential quaternary phase shit keying (DQPSK) signal dynamically delayed by the CROW. It is also demonstrated that a silicon CROW can be used in a PolDM system to introduce a polarization selective delay in order to optimize the time interleaving of the two orthogonally polarized data streams.

  13. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  14. Fabrication of silicon nitride-silicon carbide nanocomposite ceramics

    International Nuclear Information System (INIS)

    Silicon nitride-silicon carbide nanocomposites have so far been fabricated by hot-pressing fine amorphous Si-C-N powder produced by CVD. This composite exhibited excellent strength and fracture toughness and maintained high strength to temperatures above 1200 C. The current work deals with the fabrication of nanocomposites produced using mixtures of Si3N4 and nanosize SiC powders. Conventional processing techniques were used to optimise the dispersion of the SiC particles. Densification was achieved by pressureless sintering, gas pressure sintering and sinter/HIPping. Mechanical properties such as hardness, fracture toughness and strength at room temperature were assessed. The nanocomposites produced were compared with composites produced using alternative starting materials. (orig.)

  15. Silicon carbide nanowires synthesized with phenolic resin and silicon powders

    Science.gov (United States)

    Zhao, Hongsheng; Shi, Limin; Li, Ziqiang; Tang, Chunhe

    2009-02-01

    Large-scale silicon carbide nanowires with the lengths up to several millimeters were synthesized by a coat-mix, moulding, carbonization, and high-temperature sintering process, using silicon powder and phenolic resin as the starting materials. Ordinary SiC nanowires, bamboo-like SiC nanowires, and spindle SiC nanochains are found in the fabricated samples. The ordinary SiC nanowire is a single-crystal SiC phase with a fringe spacing of 0.252 nm along the [1 1 1] growth direction. Both of the bamboo-like SiC nanowires and spindle SiC nanochains exhibit uniform periodic structures. The bamboo-like SiC nanowires consist of amorphous stem and single-crystal knots, while the spindle SiC nanochains consist of uniform spindles which grow uniformly on the entire nanowires.

  16. Debug automation from pre-silicon to post-silicon

    CERN Document Server

    Dehbashi, Mehdi

    2015-01-01

    This book describes automated debugging approaches for the bugs and the faults which appear in different abstraction levels of a hardware system. The authors employ a transaction-based debug approach to systems at the transaction-level, asserting the correct relation of transactions. The automated debug approach for design bugs finds the potential fault candidates at RTL and gate-level of a circuit. Debug techniques for logic bugs and synchronization bugs are demonstrated, enabling readers to localize the most difficult bugs. Debug automation for electrical faults (delay faults)finds the potentially failing speedpaths in a circuit at gate-level. The various debug approaches described achieve high diagnosis accuracy and reduce the debugging time, shortening the IC development cycle and increasing the productivity of designers. Describes a unified framework for debug automation used at both pre-silicon and post-silicon stages; Provides approaches for debug automation of a hardware system at different levels of ...

  17. D0 Silicon Upgrad: D0 Silicon Cooling System

    Energy Technology Data Exchange (ETDEWEB)

    Squires, B.; /Fermilab

    1998-07-14

    The cooling system design is not complete. This paper lays out the general design and some of the design calculations that have been performed up to this date. Further refinement will be performed. This is especially true in the piping layout, piping insulation and detector manifold areas. The silicon detector is cooled by means of a coolant in the beryllium channels that also act as the primary supporting device for the silicon ladders and wedges. The coolant is water with ethylene glycol added as a freezing point depressant. The glycol concentration in the coolant is 30% by weight resulting in a freezing point of approximately -15 C. If the water/glycol is not sufficient for maintaining the desired detector temperature the concentration of the water/glycol may be changed or an alternative coolant may be used.

  18. Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer

    OpenAIRE

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; KONAGAI, MAKOTO

    2014-01-01

    The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is po...

  19. X-RAY SCATTERING MEASUREMENTS OF SILICON OXIDES ON SILICON

    OpenAIRE

    Cowley, R; Lucas, C.

    1989-01-01

    Measurements have been made of the X-ray reflectivity and the X-ray scattering in the tails of the Bragg reflections from samples of silicon wafers with oxide layers produced by varying techniques and thicknesses. The measurements were performed by using a triple crystal spectrometer on a rotating anode X-ray source. The advantages of using a triple crystal spectrometer for these measurements are high resolution even when the surfaces are not macroscopically flat and a clear separation of the...

  20. Thermal and mechanical joints to cryo-cooled silicon monochromatorcrystals

    Energy Technology Data Exchange (ETDEWEB)

    MacDowell, A.; Fakra, S.; Morrison, G.

    2006-07-14

    We describe the performance of various materials used as thethermal interface between silicon to silicon and silicon to copper jointswhen operated at ~;120K and loaded with ~;20 watts of thermal power. Wefind that only the indium based silicon-to-silicon joint isreliable.

  1. Zhongguan Village, China's Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Liu Xinwen

    2008-01-01

    @@ In 1999,driven by the dream of using technology to change people's lives,Li Yanhong,returned to Zhongguancun(Zhongguan Village in Chinese),Beijing from Silicon Valley in the U.S.to create Baidu.com.Over the years,Baidu has become the most frequently hitted website in China as well as the largest Chinesc search engine and Chinese language website in the world.

  2. The ATLAS Silicon Pixel Sensors

    CERN Document Server

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C

    2001-01-01

    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  3. Amorphous silicon based betavoltaic devices

    OpenAIRE

    Wyrsch, N; Riesen, Y.; Franco, A; S. Dunand; Kind, H.; Schneider, S.; Ballif, C.

    2013-01-01

    Hydrogenated amorphous silicon betavoltaic devices are studied both by simulation and experimentally. Devices exhibiting a power density of 0.1 μW/cm2 upon Tritium exposure were fabricated. However, a significant degradation of the performance is taking place, especially during the first hours of the exposure. The degradation behavior differs from sample to sample as well as from published results in the literature. Comparisons with degradation from beta particles suggest an effect of tritium...

  4. Coating of silicon pore optics

    DEFF Research Database (Denmark)

    Cooper-Jensen, Carsten P.; Ackermann, M.; Christensen, Finn Erland;

    2009-01-01

    For the International X-ray observatory (IXO), a mirror module with an effective area of 3 m2 at 1.25 keV and at least 0.65 m2 at 6 keV has to be realized. To achieve this goal, coated silicon pore optics has been developed over the last years. One of the challenges is to coat the Si plates...

  5. Modeling crosstalk in silicon photomultipliers

    OpenAIRE

    Gallego, L.; Rosado Vélez, Jaime; Arqueros Martínez, Fernando

    2013-01-01

    Optical crosstalk seriously limits the photon-counting resolution of silicon photomultipliers. In this work, realistic analytical models to describe the crosstalk effects on the response of these photodetectors are presented and compared with experimental data. The proposed models are based on the hypothesis that each pixel of the array has a finite number of available neighboring pixels to excite via crosstalk. Dead-time effects and geometrical aspects of the propagation of crosstalk between...

  6. Thermally Sprayed Silicon Carbide Coating

    OpenAIRE

    Mubarok, Fahmi

    2014-01-01

    Thermal spraying of silicon carbide (SiC) material is a challenging task since SiC tends to decompose during elevated temperature atmospheric spraying process. The addition of metal or ceramic binders as a matrix phase is necessary to facilitate the bonding of SiC particles, allowing SiC coatings to be deposited. In the conventional procedure, the matrix phase is added through mechanical mixing or mechanical alloying of the powder constituents, making it difficult to achieve homogeneous distr...

  7. Characterisation of silicon photonics devices

    OpenAIRE

    Leung, David

    2013-01-01

    Silicon based integrated circuits has been dominating the electronics technology industry in the last few decades. As the telecommunications and the computing industry slowly converges together, the need for a material to build photonics integrated circuits (PIC) that can be cost-effective and be produced in mass market has become very important. This thesis describes and outlines the characteristics of high index contrast waveguides as a building blocks that can be designed, fabricated a...

  8. Immigrant Entrepreneurs in Silicon Valley

    OpenAIRE

    Saxenian, AnnaLee; Edulbehram, Jumbi

    1998-01-01

    This anicle documents the growing presence of highly educated and technically skilled Indian and Chinese immigrants in the Silicon Valle y workforce. These immigrants are employed in the high-tech sectors of the economy at greater rates than the general population, are more likely to work in manufacturing than services, and have a greater degree of professional employment than the norm. Census and corporate data suggest that Indian- and Chinese-run businesses are already a substan tial force ...

  9. Casting larger polycrystalline silicon ingots

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Tomlinson, T.; Cliber, J.; Shea, S.; Narayanan, M.

    1995-08-01

    Solarex has developed and patented a directional solidification casting process specifically designed for photovoltaics. In this process, silicon feedstock is melted in a ceramic crucible and solidified into a large grained semicrystalline silicon ingot. In-house manufacture of low cost, high purity ceramics is a key to the low cost fabrication of Solarex polycrystalline wafers. The casting process is performed in Solarex designed casting stations. The casting operation is computer controlled. There are no moving parts (except for the loading and unloading) so the growth process proceeds with virtually no operator intervention Today Solarex casting stations are used to produce ingots from which 4 bricks, each 11.4 cm by 11.4 cm in cross section, are cut. The stations themselves are physically capable of holding larger ingots, that would yield either: 4 bricks, 15 cm by 15 an; or 9 bricks, 11.4 cm by 11.4 an in cross-section. One of the tasks in the Solarex Cast Polycrystalline Silicon PVMaT Program is to design and modify one of the castings stations to cast these larger ingots. If successful, this effort will increase the production capacity of Solarex`s casting stations by 73% and reduce the labor content for casting by an equivalent percentage.

  10. Characterisation of some experimental silicones.

    Science.gov (United States)

    Parker, S; Meththananda, I; Braden, M; Pearson, G J

    2006-12-01

    Release of antimicrobials/antibacterials like chlorhexidine diacetate (CHD) has proved successful in inhibiting Candidal colonisation of silicone-based biomaterials. However, their addition will increase water uptake and may compromise the mechanical integrity. Two experimental silicones (S1 and S2) differing only in the surface treatment of the filler, were investigated. Ultimate tensile strength (UTS), % elongation at break (Eb), Shore A hardness and, when doped with 1% CHD, water uptake and CHD release were measured. Elastic modulus (E) was calculated from the hardness measurements. There was no significant difference in UTS and Eb between the two materials. However S1 had a higher hardness (30.6 +/- 0.97) and thus E (0.76 MPa) than S2 (hardness = 23.8 +/- 0.48, E = 0.45 MPa). Water uptake for S2 (0.6%) was higher than for S2 (0.1) and addition of CHD dramatically increased the uptake of both (S1 = 3.1%, S2 = 4.0%). Release of CHD was higher for S2 (30%) than S1 (27%). Equating osmotic pressure within the droplets with elastic restraining force gave an extension ratio of 1.95 for S1 and 5.39 for S2. Thus, addition of a hydrophilic agent can compromise the mechanical integrity of low modulus silicones.

  11. Pyrolytic carbon coated black silicon.

    Science.gov (United States)

    Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi

    2016-01-01

    Carbon is the most well-known black material in the history of man. Throughout the centuries, carbon has been used as a black material for paintings, camouflage, and optics. Although, the techniques to make other black surfaces have evolved and become more sophisticated with time, carbon still remains one of the best black materials. Another well-known black surface is black silicon, reflecting less than 0.5% of incident light in visible spectral range but becomes a highly reflecting surface in wavelengths above 1000 nm. On the other hand, carbon absorbs at those and longer wavelengths. Thus, it is possible to combine black silicon with carbon to create an artificial material with very low reflectivity over a wide spectral range. Here we report our results on coating conformally black silicon substrate with amorphous pyrolytic carbon. We present a superior black surface with reflectance of light less than 0.5% in the spectral range of 350 nm to 2000 nm. PMID:27174890

  12. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  13. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  14. Light Emission in Silicon from Carbon Nanotubes

    CERN Document Server

    Gaufrès, Etienne; Noury, Adrien; Roux, Xavier Le; Rasigade, Gilles; Beck, Alexandre; Vivien, Laurent

    2015-01-01

    The use of optics in microelectronic circuits to overcome the limitation of metallic interconnects is more and more considered as a viable solution. Among future silicon compatible materials, carbon nanotubes are promising candidates thanks to their ability to emit, modulate and detect light in the wavelength range of silicon transparency. We report the first integration of carbon nanotubes with silicon waveguides, successfully coupling their emission and absorption properties. A complete study of this coupling between carbon nanotubes and silicon waveguides was carried out, which led to the demonstration of the temperature-independent emission from carbon nanotubes in silicon at a wavelength of 1.3 {\\mu}m. This represents the first milestone in the development of photonics based on carbon nanotubes on silicon.

  15. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron;

    2007-01-01

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...... by a classical Drude–Smith model, suitable for disorder-driven metal–insulator transitions. In this work, we explore the time evolution of the frequency dependent complex conductivity after optical injection of carriers on a picosecond time scale. Furthermore, we show the lifetime of photoconductivity...

  16. New Perspective of High-Pure Silicon

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    @@The discovery in the middle of 1950s of the semi-con ducting properties of crystalline silicon has led to the impetu ous development of electric power facilities, the sun-power industry, and particularly, the microelectronic industry. The increasing demand for the high-pure silicon requires the production of synthetic crystals. The raw material for the syn thetic crystals, the so-called technical, or metallurgical silicon, is obtained from quartzite and quartz of superior quality by means of carbon-thermal reduction of silicon using an electric arc discharge. The complexity of the technological process, high cost of the related facilities, worsening environmental pollution, and narrow-mindedness of a raw material company are attributed to the rise in price of the final product-silicon plates, resulting in the fall in the production of high-pure silicon, normally used in sun storage batteries.

  17. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  18. Photodetectors on the Basis of Porous Silicon

    Directory of Open Access Journals (Sweden)

    I.B. Olenych

    2012-11-01

    Full Text Available The paper studies the electrical characteristics of photodiode structures porous siliconsilicon substrates modified with molecules of iodine. Changes the nature of current-voltage characteristics obtained structures with symmetrical for straightening result of adsorption of iodine are revealed. It is studied the spectral characteristics of photoresponse in the 450-1100 nm wavelength range, its temperature dependence in the 125-325 K range and energy characteristics of photovoltaic structures based on porous silicon. A possible mechanism of influence of iodine adsorption on the electrical and photoelectrical properties of the structures of porous siliconsilicon substrates is proposed. The results extend the perspectives of porous silicon in photoelectronics.

  19. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko

    2001-01-01

    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  20. Characterization methods for silicon photodiode and silicon sub-surface properties

    OpenAIRE

    Haapalinna, Atte

    2004-01-01

    This thesis considers the characterization of silicon photodiode and the applications of silicon photodiodes in precision metrology, and some aspects of the silicon material characterizations. Such material characterizations are required in the process of semiconductor device manufacturing, one example of which is the silicon photodiode manufacturing. The motivation for the research on radiometry reported in this thesis has been the development of optical metrology at the Helsinki Univers...

  1. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

    OpenAIRE

    Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that...

  2. Structure and Optical Properties of Silicon Nanocrystals Embedded in Amorphous Silicon Thin Films Obtained by PECVD

    OpenAIRE

    Monroy, B. M.; Aduljay Remolina Millán; García-Sánchez, M. F.; Ponce, A.; Picquart, M.; Santana, G.

    2011-01-01

    Silicon nanocrystals embedded in amorphous silicon matrix were obtained by plasma enhanced chemical vapor deposition using dichlorosilane as silicon precursor. The RF power and dichlorosilane to hydrogen flow rate ratio were varied to obtain different crystalline fractions and average sizes of silicon nanocrystals. High-resolution transmission electron microscopy images and RAMAN measurements confirmed the existence of nanocrystals embedded in the amorphous matrix with average sizes between 2...

  3. Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

    OpenAIRE

    Wong, S Chien; Ramkissoon, Yashin D; Lopez, Mauricio; Page, Kristopher; Ivan P. Parkin; Sullivan, Paul M

    2009-01-01

    Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

  4. Studies on Some Properties of Silicon Brass

    Directory of Open Access Journals (Sweden)

    P. Banerjee

    1970-01-01

    Full Text Available This study reveals that mechanical properties of silicon brass are superior and sea salt corrosion is of the same order as Naval and Admiralty brasses but inferior to aluminium brass. In condenser tube condition, silicon brass has only half the thermal conductivity of Naval or aluminium brass but corrosion resistance is of the same order. The stress corrosion resistance of silicon brass is much superior

  5. Picosecond Pulse Laser Microstructuring of silicon

    Institute of Scientific and Technical Information of China (English)

    赵明; 尹钢; 朱京涛; 赵利

    2003-01-01

    We report the experimental results of picosecond pulse laser microstructuring (pulse duration 35ps, wavelength 1.06μm, repetition rate 10Hz) of silicon using the direct focusing technique. Arrays of sharp conical spikes located below the initial surface have been formed by cumulative picosecond pulsed laser irradiation of silicon in SF6. Irradiation of silicon surface in air, N2, or vacuum creates ripple-like patterns, but does not create the sharp conical spikes.

  6. Production properties and uses of silicones

    Directory of Open Access Journals (Sweden)

    Defence Research Laboratory

    1961-10-01

    Full Text Available Silicones are polymers in which the backbone of the molecule is built up from alternate silicone and oxygen atoms and differ in many respects from all the other polymers in which the molecule is based on carbon-carbon chain. The methods of manufacture of different types of silicone polymers, their properties and specific uses with special reference to Defence equipment are reviewed.

  7. Advanced Nanophotonics: Silicon-Organic Hybrid Technology

    OpenAIRE

    Steglich, Patrick; Villringer, Claus; Pulwer, Silvio; Bauer, Joachim; Heinrich, Friedhelm; Casalboni, Mauro; Schrader, Sigurd

    2016-01-01

    Integrated photonic devices have gained increasing research interests. Especially silicon photonics have become very attractive for various optical applications. Using silicon-on-insulator as a material platform provides the ability to fabricate photonic devices with electronic devices on a single chip. Driven by substantial research investments, the integration of photonic devices on silicon-on-insulator substrates has reached a degree of maturity that already permits industrial adoption. Ho...

  8. Tests Of Amorphous-Silicon Photovoltaic Modules

    Science.gov (United States)

    Ross, Ronald G., Jr.

    1988-01-01

    Progress in identification of strengths and weaknesses of amorphous-silicon technology detailed. Report describes achievements in testing reliability of solar-power modules made of amorphous-silicon photovoltaic cells. Based on investigation of modules made by U.S. manufacturers. Modules subjected to field tests, to accelerated-aging tests in laboratory, and to standard sequence of qualification tests developed for modules of crystalline-silicon cells.

  9. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  10. The Achievements and Challenges of Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Richard Soref

    2008-01-01

    Full Text Available A brief overview of silicon photonics is given here in order to provide a context for invited and contributed papers in this special issue. Recent progress on silicon-based photonic components, photonic integrated circuits, and optoelectronic integrated circuits is surveyed. Present and potential applications are identified along with the scientific and engineering challenges that must be met in order to actualize applications. Some on-going government-sponsored projects in silicon optoelectronics are also described.

  11. Hybrid integrated platforms for silicon photonics

    OpenAIRE

    Bowers, John E; Roel Baets; Gunther Roelkens; Di Liang

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon phot...

  12. Silicon-based nanochannel glucose sensor

    OpenAIRE

    Wang, Xihua; Chen, Yu; Gibney, Katherine A.; Erramilli, Shyamsunder; Mohanty, Pritiraj

    2008-01-01

    Silicon nanochannel biological field effect transistors have been developed for glucose detection. The device is nanofabricated from a silicon-on-insulator wafer with a top-down approach and surface functionalized with glucose oxidase. The differential conductance of silicon nanowires, tuned with source-drain bias voltage, is demonstrated to be sensitive to the biocatalyzed oxidation of glucose. The glucose biosensor response is linear in the 0.5-8 mM concentration range with 3-5 min response...

  13. Diamond-silicon carbide composite and method

    Science.gov (United States)

    Zhao, Yusheng

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  14. The silicon vacancy in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Janzen, Erik, E-mail: erija@ifm.liu.s [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Gali, Adam [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, H-1111 Budapest (Hungary); Carlsson, Patrick; Gaellstroem, Andreas [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Magnusson, Bjoern [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Norstel AB, Ramshaellsvaegen 15, SE-602 38 Norrkoeping (Sweden); Son, N.T. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)

    2009-12-01

    The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.

  15. Pused CO2 laser driven production of ultrafine Silicon, Silicon carbide, Silicon nitrides oxynitride powders

    International Nuclear Information System (INIS)

    Ultrafine Si, Si3N4, SiC and silicon oxynitride powders have been produced by irradiating gas-phase reactants by means of a CO2 laser. The mechanism of SiH4 CO2 laser induced absorption and dissociation is discussed on the basis of the results of the spectral and time resolved measurement of fragment chemiluminescence. The role played by the SiH2 radical in the powder formation is investigated. The quality of Si, Si3N4, SiC and silicon oxynitride powders is checked by means of several off-line diagnostics (IR spectroscopy, X-Ray diffraction at wide and small angle, BET analysis). The possibility of controlling powder stoichiometry and doping from the gas-phase reactant concetration is discussed

  16. Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

    Science.gov (United States)

    Tanaka, Hidehiko

    1987-01-01

    A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

  17. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, Jeroen; Berenschot, Erwin; Maury, Pascale; Jansen, Henri

    2005-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily a

  18. Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

    NARCIS (Netherlands)

    Haneveld, Jeroen; Berenschot, Erwin; Maury, Pascale; Jansen, Henri

    2006-01-01

    A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7–20 nm wide, 40–100 nm high and centimeters long. All dimensions are easily a

  19. High-Index Contrast Silicon Rich Silicon Nitride Optical Waveguides and Devices

    DEFF Research Database (Denmark)

    Philipp, Hugh Taylor

    2004-01-01

    This research focused on the realization of high-density integrated optical devices made with high-index contrast waveguides. The material platform used for to develop these devices was modeled after standard silicon on silicon technology. The high-index waveguide core material was silicon rich s...

  20. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  1. Diffusivity in silicon 1953 to 2009

    CERN Document Server

    Fisher, David J

    2010-01-01

    This work is essentially an update of previous compilations of information on the diffusivity of elements in semiconductor-grade silicon. It subsumes the data contained in B.L.Sharma's monograph on 'Diffusion in Semiconductors' (Trans Tech Publications, 1970), plus the data contained in Diffusion and Defect Data (Diffusion in Silicon) Volume 45 (1986), Defect and Diffusion Forum (Diffusion in Silicon - 10 years of Research) Volumes 153-155 (1998), Defect and Diffusion Forum (Diffusion in Silicon - a Seven-Year Retrospective) Volume 241 (2005) and the latest data from recent Semiconductor Retro

  2. Simple Approach to Superamphiphobic Overhanging Silicon Nanostructures

    DEFF Research Database (Denmark)

    Kumar, Rajendra; Mogensen, Klaus Bo; Bøggild, Peter

    2010-01-01

    Superhydrophobic silicon nanostructures were fabricated by anisotropic etching of silicon coated with a thin hydrophobic layer. At certain etch parameters, overhanging nanostructures form at the apexes of the rod-shaped tips, This leads to superoleophobic behavior for several oily liquids...... with contact angles up to 152 degrees and roll-off angle down to 8 degrees. Such nonlithographic nanoscale overhanging Structures can also be added to silicon nanograss by deposition of a thin SiO2 layer, which equips the silicon rods with 100-300 nm sized overhanging Structures. This is a simple, fast...

  3. Engineering piezoresistivity using biaxially strained silicon

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads;

    2008-01-01

    We calculate the shear piezocoefficient of p-type silicon with grown-in biaxial strain using a 66 k·p method. We find a significant increase in the value of the shear piezocoefficient for compressive grown-in biaxial strain, while tensile strain decreases the piezocoefficient. The dependence...... of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

  4. Activation of silicon quantum dots for emission

    Institute of Scientific and Technical Information of China (English)

    Huang Wei-Qi; Miao Xin-Jian; Huang Zhong-Mei; Liu Shi-Rong; Qin Chao-Jian

    2012-01-01

    The emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on the surface of silicon quantum dots can break the passivation to form localized electronic states in the band gap to generate active centers where stronger emission occurs.From this point of view,we can build up radiative matter for emission.Emissions of various wavelengths can be obtained by controlling the surface bonds of silicon quantum dots.Our experimental results demonstrate that annealing is important in the treatment of the activation,and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.

  5. Raman Amplifier Based on Amorphous Silicon Nanoparticles

    OpenAIRE

    M.A. Ferrara; Rendina, I.; S. N. Basu; Dal Negro, L.; Sirleto, L.

    2012-01-01

    The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman la...

  6. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  7. Radiation experience with the CDF silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Husemann, Ulrich; /Rochester U.

    2005-11-01

    The silicon detectors of the CDF experiment at the Tevatron collider are operated in a harsh radiation environment. The lifetime of the silicon detectors is limited by radiation damage, and beam-related incidents are an additional risk. This article describes the impact of beam-related incidents on detector operation and the effects of radiation damage on electronics noise and the silicon sensors. From measurements of the depletion voltage as a function of the integrated luminosity, estimates of the silicon detector lifetime are derived.

  8. Silicon infrared diffuser for wireless communication

    Science.gov (United States)

    Massera, Ettore; Rea, Ilaria; Nasti, Ivana; Maddalena, Pasqualino; di Francia, Girolamo

    2006-09-01

    We show what we believe to be a novel way to use silicon in infrared radio communication as a suitable material for the realization of optical diffusers in the range of 850-1600 nm. A crystalline silicon wafer is made porous by means of electrochemical etching. The porous silicon produced is optically characterized, and measurements report a high reflectance in the band of interest. We also study the angular distribution of diffused radiation by the porous silicon surface at different angles of incident radiation. Measurements show that radiation diffuses in a quasi-Lambertian manner, confirming the good performance of this material as an incident radiation diffuser.

  9. Silicon solid state devices and radiation detection

    CERN Document Server

    Leroy, Claude

    2012-01-01

    This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers stateof- the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application.

  10. Polytype distribution in circumstellar silicon carbide.

    Science.gov (United States)

    Daulton, T L; Bernatowicz, T J; Lewis, R S; Messenger, S; Stadermann, F J; Amari, S

    2002-06-01

    The inferred crystallographic class of circumstellar silicon carbide based on astronomical infrared spectra is controversial. We have directly determined the polytype distribution of circumstellar SiC from transmission electron microscopy of presolar silicon carbide from the Murchison carbonaceous meteorite. Only two polytypes (of a possible several hundred) were observed: cubic 3C and hexagonal 2H silicon carbide and their intergrowths. We conclude that this structural simplicity is a direct consequence of the low pressures in circumstellar outflows and the corresponding low silicon carbide condensation temperatures. PMID:12052956

  11. Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. High breakdown-strength composites from liquid silicone rubbers

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Zakaria, Shamsul Bin; Yu, Liyun;

    2014-01-01

    In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially...

  13. Atomic-scale disproportionation in amorphous silicon monoxide.

    Science.gov (United States)

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-01-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material. PMID:27172815

  14. Atomic-scale disproportionation in amorphous silicon monoxide

    Science.gov (United States)

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-05-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material.

  15. Characterization of nitrided silicon-silicon dioxide interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Polignano, M.L.; Alessandri, M.; Brazzelli, D. [and others

    2000-07-01

    A newly-developed technique for the simultaneous characterization of the oxide-silicon interface properties and of bulk impurities was used for a systematic study of the nitridation process of thin oxides. This technique is based upon surface recombination velocity measurements, and does not require the formation of a capacitor structure, so it is very suitable for the characterization of as-grown interfaces. Oxides grown both in dry and in wet environments were considered, and nitridation processes in N{sub 2}O and in NO were compared to N{sub 2} annealing processes. The effect of nitridation temperature and duration were also studied, and RTO/RTN processes were compared to conventional furnace nitridation processes. Surface recombination velocity was correlated with nitrogen concentration at the oxide-silicon interface obtained by Secondary Ion Mass Spectroscopy (SIMS) measurements. Surface recombination velocity (hence surface state density) decreases with increasing nitrogen pile-up at the oxide-silicon interface, indicating that in nitrided interfaces surface state density is limited by nitridation. NO treatments are much more effective than N{sub 2}O treatments in the formation of nitrogen-rich interface layer and, as a consequence, in surface state reduction. Surface state density was measured in fully processed wafers before and after constant current stress. After a complete device process surface states are annealed out by hydrogen passivation, however they are reactivated by the electrical stress, and surface state results after stress were compared with data of surface recombination velocity in as-processed wafers.

  16. Atomic-scale disproportionation in amorphous silicon monoxide

    OpenAIRE

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-01-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphou...

  17. Using silicon to enhance rice anther culture efficiency

    Institute of Scientific and Technical Information of China (English)

    LIUBaoshen; CHENCuixia; YINLiqing; ZHANGJianjun

    1997-01-01

    Silicon is one of essential elements for rice growth. Deficiency of silicon in plants would affect the physiological metabolism of rice.Considering the important role of silicon to rice and no silicon being used in ordinary anther culture medium, we added absorbable silicon at different concentrations into either or both in-duction media (IM), differentiation media(DM) to study the effect of silicon on anther culture efficiency.

  18. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  19. Silicon: the health benefits of a metalloid.

    Science.gov (United States)

    Martin, Keith R

    2013-01-01

    Silicon is the second most abundant element in nature behind oxygen. As a metalloid, silicon has been used in many industrial applications including use as an additive in the food and beverage industry. As a result, humans come into contact with silicon through both environmental exposures but also as a dietary component. Moreover, many forms of silicon, that is, Si bound to oxygen, are water-soluble, absorbable, and potentially bioavailable to humans presumably with biological activity. However, the specific biochemical or physiological functions of silicon, if any, are largely unknown although generally thought to exist. As a result, there is growing interest in the potential therapeutic effects of water-soluble silica on human health. For example, silicon has been suggested to exhibit roles in the structural integrity of nails, hair, and skin, overall collagen synthesis, bone mineralization, and bone health and reduced metal accumulation in Alzheimer's disease, immune system health, and reduction of the risk for atherosclerosis. Although emerging research is promising, much additional, corroborative research is needed particularly regarding speciation of health-promoting forms of silicon and its relative bioavailability. Orthosilicic acid is the major form of bioavailable silicon whereas thin fibrous crystalline asbestos is a health hazard promoting asbestosis and significant impairment of lung function and increased cancer risk. It has been proposed that relatively insoluble forms of silica can also release small but meaningful quantities of silicon into biological compartments. For example, colloidal silicic acid, silica gel, and zeolites, although relatively insoluble in water, can increase concentrations of water-soluble silica and are thought to rely on specific structural physicochemical characteristics. Collectively, the food supply contributes enough silicon in the forms aforementioned that could be absorbed and significantly improve overall human health

  20. Force modulation microscopy of multilayered porous silicon samples

    Science.gov (United States)

    Sbrana, F.; Ghulinyan, M.; Pavesi, L.

    2005-06-01

    In this paper we report on Force Modulation Microscopy (FMM) study and force-distance curve analysis of porous silicon layers grown on silicon. The characterization has been carried out on the cross section of porous silicon. The FMM images allowed us to investigate the morphological thickness of the layers through local elasticity differences resolving both between porous silicon layers of different porosities and between porous silicon and silicon itself. Force-distance curves showed different adhesion behaviour: porous silicon is more hydrophobic than bulk silicon in cross sectional view.

  1. Crystal growth and evaluation of silicon for VLSI and ULSI

    CERN Document Server

    Eranna, Golla

    2014-01-01

    PrefaceAbout the AuthorIntroductionSilicon: The SemiconductorWhy Single CrystalsRevolution in Integrated Circuit Fabrication Technology and the Art of Device MiniaturizationUse of Silicon as a SemiconductorSilicon Devices for Boolean ApplicationsIntegration of Silicon Devices and the Art of Circuit MiniaturizationMOS and CMOS Devices for Digital ApplicationsLSI, VLSI, and ULSI Circuits and ApplicationsSilicon for MEMS ApplicationsSummaryReferencesSilicon: The Key Material for Integrated Circuit Fabrication TechnologyIntroductionPreparation of Raw Silicon MaterialMetallurgical-Grade SiliconPuri

  2. Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

    OpenAIRE

    Seif, Johannes Peter; Descoeudres, Antoine; Filipic, Miha; Smole, Franc; Topic, Marko; Holman, Zachary Charles; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    In amorphous/crystalline silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous silicon films by wider bandgap amorphous silicon oxide layers. In this article, we use stacks of intrinsic amorphous silicon and amorphous silicon oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm2 due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit volt...

  3. The STAR silicon vertex tracker: a large area silicon drift detector

    CERN Document Server

    Lynn, D; Beuttenmüller, Rolf H; Caines, H; Chen, W; Dimassimo, D; Dyke, H; Elliot, D; Eremin, V; Grau, M; Hoffmann, G W; Humanic, T; Ilyashenko, Yu S; Kotov, I; Kraner, H W; Kuczewski, P; Leonhardt, B; Li, Z; Liaw, C J; Lo Curto, G; Middelkamp, P; Minor, R; Munhoz, M; Ott, G; Pandey, S U; Pruneau, C A; Rykov, V L; Schambach, J; Sedlmeir, J; Soja, B; Sugarbaker, E R; Takahashi, J; Wilson, K; Wilson, R

    2000-01-01

    The Solenoidal Tracker At RHIC-Silicon Vertex Tracker (STAR-SVT) is a three barrel microvertex detector based upon silicon drift detector technology. As designed for the STAR-SVT, silicon drift detectors (SDDs) are capable of providing unambiguous two-dimensional hit position measurements with resolutions on the order of 20 mu m in each coordinate. Achievement of such resolutions, particularly in the drift direction coordinate, depends upon certain characteristics of silicon and drift detector geometry that are uniquely critical for silicon drift detectors hit measurements. Here we describe features of the design of the STAR-SVT SDDs and the front-end electronics that are motivated by such characteristics.

  4. Coupling of semiconductor carbon nanotubes emission with silicon photonic micro ring resonators

    Science.gov (United States)

    Sarti, Francesco; Caselli, Niccolò; La China, Federico; Biccari, Francesco; Torrini, Ughetta; Intonti, Francesca; Vinattieri, Anna; Durán-Valdeiglesias, Elena; Zhang, Weiwei; Noury, Adrien; Alonso-Ramos, Carlos; Hoang, ThiHong Cam; Serna, Samuel; Le Roux, Xavier; Cassan, Eric; Izard, Nicolas; Yang, Hongliu; Bezugly, Viktor; Cuniberti, Gianaurelio; Filoramo, Arianna; Vivien, Laurent; Gurioli, Massimo

    2016-05-01

    Hybrid structures are needed to fully exploit the great advantages of Si photonics and several approaches have been addressed where Si devices are bonded to different materials and nanostructures. Here we study the use of semiconductor carbon nanotubes for emission in the 1300 nm wavelength range to functionalize Si photonic structures in view of optoelectronic applications. The Si micro-rings are fully characterized by near field forward resonant scattering with 100 nm resolution. We show that both TE and TM modes can be addressed on the top of the micro-rings in a vectorial imaging of the in-plane polarization components. We coupled the Si micro-resonators with selected carbon nanotubes for high photoluminescence emission. Coupling nanotubes with the evanescent tails in air of the electric field localized in the photonic modes of the micro-resonators is demonstrated by sharp resonances over imposed to the nanotube emission bands. By mapping the Si and the nanotube emission we demonstrate that strong enhancement of the nanotube photoluminescence can be achieved both in the photonic modes of micro-disks and slot micro-rings, whenever the spatial overlap between nano-emitters and photonic modes is fulfilled.

  5. Enhanced Sintering of Boron Carbide-Silicon Composites by Silicon

    Science.gov (United States)

    Zeng, Xiaojun; Liu, Weiliang

    2016-09-01

    Boron carbide (B4C)-silicon (Si) composites have been prepared by aqueous tape casting, laminating, and spark plasma sintering (SPS). The influences of silicon (Si) content on the phases, microstructure, sintering properties, and mechanical properties of the obtained B4C-Si composites are studied. The results indicate that the addition of Si powder can act as a sintering aid and contribute to the sintering densification. The addition of Si powder can also act as a second phase and contribute to the toughening for composites. The relative density of B4C-Si composites samples with adding 10 wt.% Si powder prepared by SPS at 1600 °C and 50 MPa for 8 min is up to 98.3%. The bending strength, fracture toughness, and Vickers hardness of the sintered samples are 518.5 MPa, 5.87 MPa m1/2, and 38.9 GPa, respectively. The testing temperature-dependent high-temperature bending strength and fracture toughness can reach a maximum value at 1350 °C. The B4C-Si composites prepared at 1600, 1650, and 1700 °C have good high-temperature mechanical properties. This paper provides a facile low-temperature sintering route for B4C ceramics with improved properties.

  6. Gas phase separation of silicon carbide and silicon nitride

    International Nuclear Information System (INIS)

    Pure silicon carbide and silicon nitride in compact, pore-free form have valuable properties which only could never be fully utilized so far. The two compounds cannot be melted or sintered in their pure form, additives are required for hot-pressing or pressureless sintering, and only porous material is obtained by reaction sintering, where only Si and C or Si and N are used. - The new technique of chemical gas phase separation might help to overcome the drawbacks of present techniques. In the new technique SiC is produced e.g., by pyrolysis of CH3SiCl3 and Si3N4, e.g. by reacting SiCl4 with NH3. With this techniques, the pores in SiC and Si3N4 bodies can be filled later (gas phase impregnation), very fine SiC and Si3N4 powders can be produced as well as SiC monofilaments suitable as components for SiC compound bodies. In addition fibre compound bodies can be obtained by gas phase impregnation. (orig.)

  7. Photoluminescence from silicon nanoparticles embedded in ammonium silicon hexafluoride

    Energy Technology Data Exchange (ETDEWEB)

    Kalem, Seref [UEKAE, National Research Institute of Electronics and Cryptology, Gebze 41470 Kocaeli (Turkey); Werner, Peter; Becker, Michael; Zakharov, Nikolai [Department of Experimental Physics, Max-Planck-Institute, Halle(Saale) (Germany); Talalaev, Vadim [ZIK ' SiLi-nano' , Martin-Luther-Universitaet (Halle), Karl-Freiherr-von-Fritsch-Strasse 3 D-06120 Halle (Germany); Arthursson, Oerjan, E-mail: s.kalem@uekae.tubitak.gov.tr [Microtechnology and Nanosciences Department, Chalmers University of Technology, Goeteborg (Sweden)

    2010-10-29

    Silicon (Si) nanoparticles (NPs) were synthesized by transforming a Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH{sub 4}){sub 2}SiF{sub 6} under acid vapor treatment. Si-NPs which were found to be embedded within the polycrystalline (ASH) layer exhibit a strong green-orange photoluminescence (PL). Differential PL measurements revealed a major double component spectrum consisting of a broad band associated with the ASH-Si wafer interfacial porous oxide layer and a high energy band attributable to Si-NPs embedded in the ASH. The origin of the latter emission can be explained in terms of quantum/spatial confinement effects probably mediated by oxygen related defects in or around Si-NPs. Although Si-NPs are derived from the interface they are much smaller in size than those embedded within the interfacial porous oxide layer (SiO{sub x}, x > 1.5). Transmission electron microscopy (TEM) combined with Raman scattering and Fourier transformed infrared (FTIR) analysis confirmed the presence of Si-NP and Si-O bondings pointing to the role of oxygen related defects in a porous/amorphous structure. The presence of oxygen of up to 4.5 at.% in the (NH{sub 4}){sub 2}SiF{sub 6} layer was confirmed by energy dispersive spectroscopy (EDS) analysis.

  8. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  9. Through silicon via developments for silicon photomultiplier sensors

    Science.gov (United States)

    Jackson, C.; Wall, L.; O'Neill, K.; McGarvey, B.; Herbert, D.

    2015-03-01

    Packaging can have a significant impact on the performance characteristics of Silicon Photomultipliers (SiPM) sensors as well as having an impact on reliability and yield. To provide the highest performance possible, SensL have recently developed and tested a surface mount, through silicon via (TSV) package that provides high array fill factor, high photon detection efficiency (PDE) and magnetic resonance imaging (MRI) system compatibility. The PDE of TSV packaged sensors will be shown to be the highest when compared to traditional SiPM package types. In addition the PDE in the UV and blue region will be shown to approach that of unprotected bare die. Additionally, the TSV package has minimal deadspace outside of the active area which will be shown to allow close packing when used in a sensor array. It will be shown that arrays of TSV sensors have the highest fill factor currently possible when creating arrays from singulated die. Additionally, it will be shown that TSV parts are non-magnetic and results of images taken with the TSV SiPM in a 3 Tesla magnetic resonance imaging (MRI) system will be shown to have no impact on the MRI system.

  10. Silicon limitation on primary production and its destiny in Jiaozhou Bay, China. V: Silicon deficit process

    Science.gov (United States)

    Yang, Dongfang; Gao, Zhenhui; Wang, Peigang; Sun, Peiyan; Liu, Shuang

    2005-06-01

    Silicon is a necessary nutrient for diatoms, silicon uptake in diatom reproduction decreased seawater silicon content. This paper clarified the characteristics of silicon transferring in the sea, which plays an important role in phytoplankton growth, zooplankton graze and marine ecosystem. Analysis revealed that silicate is supplied by terrestrial sources, through plankton uptake, death, and eventually deposits to the sea bottom, and cannot diffuse upward. This is a general silicon deficit process. Many global marine waters showed the same silicon transfer route: land→silicon biogeochemical process→sea bottom. River flow brings abundant silicate into marine waters, silicate concentration in the waters decreased in the distance away from the river estuaries. In discussion of silicon characteristics and its transfer route, it was considred that the main factor controlling the mechanism of diatom and non-diatom red tides occurrence is silicon, and the changes in silicon source. Human activities, such as sea-route cutting by building embankment and dam, and silicon supplement by the sea, such as sandstorm, rainstorm and storm tide, have largely impaired the earth ecosystem and hugely threatened the human existence. It is suggested in this paper that man should resume the original face of the Si input into the sea to keep natural ecosystem in sustainable pattern.

  11. Fracture dynamics in implanted silicon

    Science.gov (United States)

    Massy, D.; Mazen, F.; Tardif, S.; Penot, J. D.; Ragani, J.; Madeira, F.; Landru, D.; Kononchuk, O.; Rieutord, F.

    2015-08-01

    Crack propagation in implanted silicon for thin layer transfer is experimentally studied. The crack propagation velocity as a function of split temperature is measured using a designed optical setup. Interferometric measurement of the gap opening is performed dynamically and shows an oscillatory crack "wake" with a typical wavelength in the centimetre range. The dynamics of this motion is modelled using beam elasticity and thermodynamics. The modelling demonstrates the key role of external atmospheric pressure during crack propagation. A quantification of the amount of gas trapped inside pre-existing microcracks and released during the fracture is made possible, with results consistent with previous studies.

  12. The CDF Silicon Vertex Detector

    Energy Technology Data Exchange (ETDEWEB)

    Tkaczyk, S.; Carter, H.; Flaugher, B. [and others

    1993-09-01

    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the detector in the radiation environment are discussed. The device has been taking colliding beams data since May of 1992, performing at its best design specifications and enhancing the physics program of CDF.

  13. Low Voltage Silicon Dioxide Reliability

    Science.gov (United States)

    Schuegraf, Klaus Florian

    This study investigates the low voltage breakdown and conduction properties of thin thermal silicon dioxides with thickness ranging from 25 A to 130 A using silicon metal-oxide-semiconductor (MOS) capacitors and transistors. Investigation of oxide breakdown shows that anode hole injection is the likely mechanism responsible for silicon dioxide wearout. A quantitative model for oxide breakdown based on anode hole injection is proposed. This model not only agrees with the predictions of an empirical inverse oxide field model ("1 over E model"), it offers a methodology to extrapolate high field oxide breakdown data into the low voltage operating regime. Investigation of low voltage silicon dioxide tunneling current shows that leakage current increases dramatically above that predicted by the Fowler-Nordheim theory for oxide voltages less than 3.15 Volts, possibly setting a scaling limit on thickness at 40 A. The model is also used to compare the breakdown of p^+ and n^+ polysilicon gate, showing no change in damage initiation mechanism. The temperature dependence of breakdown is also investigated, showing that anode hole injection models the breakdown characteristics accurately for temperatures below 150^circC. The temperature acceleration of breakdown is attributed to the oxide's reduced hole immunity at higher temperatures. The anode hole injection model is thereby shown to model the breakdown characteristics of defect-free, "intrinsic" oxide very accurately. A defect model combining the breakdown mechanism of anode hole injection with "effective thinning" is able to characterize defect breakdown distributions by attributing the breakdown to an effective thinning of the oxide at some localized point. Substrate current measurements during electrical breakdown stress establish the basis for the anode hole injection model. Investigations of substrate current in oxides thinner than 55 A show that the anode hole injection current becomes dominated by the tunneling of

  14. Cryogenic operation of silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Collins, P. E-mail: paula.collins@cern.ch; Barnett, I.B.M.; Bartalini, P.; Bell, W.; Berglund, P.; Boer, W. de; Buontempo, S.; Borer, K.; Bowcock, T.; Buytaert, J.; Casagrande, L.; Chabaud, V.; Chochula, P.; Cindro, V.; Via, C. Da; Devine, S.; Dijkstra, H.; Dezillie, B.; Dimcovski, Z.; Dormond, O.; Eremin, V.; Esposito, A.; Frei, R.; Granata, V.; Grigoriev, E.; Hauler, F.; Heising, S.; Janos, S.; Jungermann, L.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O' Shea, V.; Palmieri, V.G.; Paul, S.; Parkes, C.; Ruggiero, G.; Ruf, T.; Saladino, S.; Schmitt, L.; Smith, K.; Stavitski, I.; Verbitskaya, E.; Vitobello, F.; Zavrtanik, M

    2000-06-01

    This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5x10{sup 14} p/cm{sup 2} and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage.

  15. Cryogenic operation of silicon detectors

    CERN Document Server

    Collins, P; Bartalini, P; Bell, W; Berglund, P; de Boer, Wim; Buontempo, S; Borer, K; Bowcock, T J V; Buytaert, J; Casagrande, L; Chabaud, V; Chochula, P; Cindro, V; Da Vià, C; Devine, S R H; Dijkstra, H; Dezillie, B; Dimcovski, Zlatomir; Dormond, O; Eremin, V V; Esposito, A P; Frei, R; Granata, V; Grigoriev, E; Hauler, F; Heising, S; Janos, S; Jungermann, L; Li, Z; Lourenço, C; Mikuz, M; Niinikoski, T O; O'Shea, V; Palmieri, V G; Paul, S; Parkes, C; Ruggiero, G; Ruf, T; Saladino, S; Schmitt, L; Smith, K; Stavitski, I; Verbitskaya, E; Vitobello, F; Zavrtanik, M

    2000-01-01

    This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5*10/sup 14/ p/cm/sup 2/ and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage. (17 refs).

  16. The CDF Silicon Vertex Detector

    International Nuclear Information System (INIS)

    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the detector in the radiation environment are discussed. The device has been taking colliding beams data since May of 1992, performing at its best design specifications and enhancing the physics program of CDF. (orig.)

  17. Silicon LEDs in FinFET technology

    NARCIS (Netherlands)

    Piccolo, G.; Kuindersma, P.I.; Ragnarsson, L-A.; Hueting, R.J.E.; Collaert, N.; Schmitz, J.

    2014-01-01

    We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped activ

  18. The CMS silicon strip tracker modules production

    CERN Document Server

    Giorgi, M

    2006-01-01

    To complete the construction of the CMS silicon strip tracker, about 16,000 silicon microstrip detector modules will be required. In order to guarantee the uniform quality of the produced modules and to be able to match the deadlines requested by the CMS collaboration, a semi-industrialized organization has been developed, and the different components are being presented here.

  19. Silicon based ultrafast optical waveform sampling

    DEFF Research Database (Denmark)

    Ji, Hua; Galili, Michael; Pu, Minhao;

    2010-01-01

    A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode...

  20. Angle-independent structural colors of silicon

    DEFF Research Database (Denmark)

    Højlund-Nielsen, Emil; Weirich, Johannes; Nørregaard, Jesper;

    2014-01-01

    one-layer surface textures of silicon.We explored four patterns of square structures in a square lattice with periods of 500, 400, 300, and 200 nm. The reflectivity and daylight-colors were measured and compared with simulations based on rigorously coupledwave analysis with excellent agreement. Based...... of silicon-based textures for a wide range of structural parameters....