Sample records for athermal silicon microring

  1. Linear signal processing using silicon micro-ring resonators

    DEFF Research Database (Denmark)

    Peucheret, Christophe; Ding, Yunhong; Ou, Haiyan


    We review our recent achievements on the use of silicon micro-ring resonators for linear optical signal processing applications, including modulation format conversion, phase-to-intensity modulation conversion and waveform shaping.......We review our recent achievements on the use of silicon micro-ring resonators for linear optical signal processing applications, including modulation format conversion, phase-to-intensity modulation conversion and waveform shaping....

  2. Integrated finely tunable microring laser on silicon (United States)

    Liang, D.; Huang, X.; Kurczveil, G.; Fiorentino, M.; Beausoleil, R. G.


    Large-scale computer installations are severely limited by network-bandwidth constraints and energy costs that arise from architectural designs originally based on copper interconnects. Wavelength-division multiplexed (WDM) photonic links can increase the network bandwidth but are sensitive to environmental perturbations and manufacturing imperfections that can affect the precise emission wavelength and output power of laser transmitters. Here, we demonstrate a new design of a three-terminal hybrid III-V-on-silicon laser that integrates a metal-oxide-semiconductor (MOS) capacitor into the laser cavity. The MOS capacitor makes it possible to introduce the plasma-dispersion effect and thus change the laser modal refractive index and free-carrier absorption (FCA) loss to tune the laser wavelength and output power, respectively. The approach enables a highly energy efficient method to tune the output power and wavelength of microring lasers, with future prospects for high-speed, chirp-free direct laser modulation. The concept is potentially applicable to other diode laser platforms.

  3. Athermal synchronization of laser source with WDM filter in a silicon photonics platform (United States)

    Li, Nanxi; Su, Zhan; Purnawirman, Salih Magden, E.; Poulton, Christopher V.; Ruocco, Alfonso; Singh, Neetesh; Byrd, Matthew J.; Bradley, Jonathan D. B.; Leake, Gerald; Watts, Michael R.


    In an optical interconnect circuit, microring resonators (MRRs) are commonly used in wavelength division multiplexing systems. To make the MRR and laser synchronized, the resonance wavelength of the MRR needs to be thermally controlled, and the power consumption becomes significant with a high-channel count. Here, we demonstrate an athermally synchronized rare-earth-doped laser and MRR. The laser comprises a Si3N4 based cavity covered with erbium-doped Al2O3 to provide gain. The low thermo-optic coefficient of Al2O3 and Si3N4 and the comparable thermal shift of the effective index in the laser and microring cross-sections enable lasing and resonance wavelength synchronization over a wide range of temperatures. The power difference between matched and unmatched channels remains greater than 15 dB from 20 to 50 °C due to a synchronized wavelength shift of 0.02 nm/°C. The athermal synchronization approach reported here is not limited to microring filters but can be applied to any Si3N4 filter with integrated lasers using rare earth ion doped Al2O3 as a gain medium to achieve system-level temperature control free operation.

  4. Deep glass etched microring resonators based on silica-on-silicon technology

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rottwitt, Karsten; Philipp, Hugh Taylor


    Microring resonators fabricated on silica-on-silicon technology using deep glass etching are demonstrated. The fabrication procedures are introduced and the transmission spectrum of a resonator is presented.......Microring resonators fabricated on silica-on-silicon technology using deep glass etching are demonstrated. The fabrication procedures are introduced and the transmission spectrum of a resonator is presented....

  5. Bandwidth and wavelength-tunable optical bandpass filter based on silicon microring-MZI structure

    DEFF Research Database (Denmark)

    Ding, Yunhong; Pu, Minhao; Liu, Liu


    A novel and simple bandwidth and wavelength-tunable optical bandpass filter based on silicon microrings in a Mach-Zehnder interferometer (MZI) structure is proposed and demonstrated. In this filter design, the drop transmissions of two microring resonators are combined to provide the desired...

  6. A compact electrically-pumped hybrid silicon microring laser (United States)

    Liang, Di; Okumura, Tadashi; Chang, Hsu-Hao; Spencer, Daryl; Kuo, Ying-Hao; Fang, Alexander W.; Dai, Daoxin; Fiorentino, Marco; Beausoleil, Raymond G.; Bowers, John E.


    A compact electrically-pumped hybrid silicon microring laser is realized on a hybrid silicon platform. A simplified, selfaligned, deep-etch process is developed to result in low-loss resonator with a high quality factor Q>15,000. Small footprint (resonator diameter=50 μm), electrical and optical losses all contribute to lasing threshold as low as 5.4 mA and up to 65 °C operation temperature in continuous-wave (cw) mode. Outcoupling- and bus waveguide width-dependent studies are conducted for optimizing device structure. A simple qualitative study in current-voltage (IV) characteristic shows that dry etching through active region leads to 40 dB) and small linewidth (<0.04 nm) observed. The unique bistability operation in ring resonator structure is also demonstrated.

  7. PAM4 silicon photonic microring resonator-based transceiver circuits (United States)

    Palermo, Samuel; Yu, Kunzhi; Roshan-Zamir, Ashkan; Wang, Binhao; Li, Cheng; Seyedi, M. Ashkan; Fiorentino, Marco; Beausoleil, Raymond


    Increased data rates have motivated the investigation of advanced modulation schemes, such as four-level pulseamplitude modulation (PAM4), in optical interconnect systems in order to enable longer transmission distances and operation with reduced circuit bandwidth relative to non-return-to-zero (NRZ) modulation. Employing this modulation scheme in interconnect architectures based on high-Q silicon photonic microring resonator devices, which occupy small area and allow for inherent wavelength-division multiplexing (WDM), offers a promising solution to address the dramatic increase in datacenter and high-performance computing system I/O bandwidth demands. Two ring modulator device structures are proposed for PAM4 modulation, including a single phase shifter segment device driven with a multi-level PAM4 transmitter and a two-segment device driven by two simple NRZ (MSB/LSB) transmitters. Transmitter circuits which utilize segmented pulsed-cascode high swing output stages are presented for both device structures. Output stage segmentation is utilized in the single-segment device design for PAM4 voltage level control, while in the two-segment design it is used for both independent MSB/LSB voltage levels and impedance control for output eye skew compensation. The 65nm CMOS transmitters supply a 4.4Vppd output swing for 40Gb/s operation when driving depletion-mode microring modulators implemented in a 130nm SOI process, with the single- and two-segment designs achieving 3.04 and 4.38mW/Gb/s, respectively. A PAM4 optical receiver front-end is also described which employs a large input-stage feedback resistor transimpedance amplifier (TIA) cascaded with an adaptively-tuned continuous-time linear equalizer (CTLE) for improved sensitivity. Receiver linearity, critical in PAM4 systems, is achieved with a peak-detector-based automatic gain control (AGC) loop.

  8. A comb laser-driven DWDM silicon photonic transmitter based on microring modulators. (United States)

    Chen, Chin-Hui; Ashkan Seyedi, M; Fiorentino, Marco; Livshits, Daniil; Gubenko, Alexey; Mikhrin, Sergey; Mikhrin, Vladimir; Beausoleil, Raymond G


    We demonstrate concurrent multi-channel transmission at 10 Gbps per channel of a DWDM silicon photonic transmitter. The DWDM transmitter is based on a single quantum dot comb laser and an array of microring resonator-based modulators. The resonant wavelengths of microrings are thermally tuned to align with the wavelengths provided by the comb laser. No obvious crosstalk is observed at 240 GHz channel spacing.

  9. Linear absorption coefficient of in-plane graphene on a silicon microring resonator

    CERN Document Server

    Cai, Heng; Zhang, He; Huang, Qingzhong; Xia, Jinsong; Barille, Regis; Wang, Yi


    We demonstrate that linear absorption coefficient (LAC) of a graphene-silicon hybrid waveguide (GSHW) is determined by the optical transmission spectra of a graphene coated symmetrically coupled add-drop silicon microring resonator (SC-ADSMR), of which the value is around 0.23 dB/um. In contrast to the traditional cut-back method, the measured results are not dependent on the coupling efficiency of the fiber tip and the waveguide. Moreover, precision evaluation of graphene coated silicon microring resonator (SMR) is crucial for the optoelectronic devices targeting for compact footprint and low power consumption.

  10. Linear all-optical signal processing using silicon micro-ring resonators

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing


    Silicon micro-ring resonators (MRRs) are compact and versatile devices whose periodic frequency response can be exploited for a wide range of applications. In this paper, we review our recent work on linear all-optical signal processing applications using silicon MRRs as passive filters. We focus...

  11. Monolithic erbium- and ytterbium-doped microring lasers on silicon chips. (United States)

    Bradley, Jonathan D B; Hosseini, Ehsan Shah; Purnawirman; Su, Zhan; Adam, Thomas N; Leake, Gerald; Coolbaugh, Douglas; Watts, Michael R


    We demonstrate monolithic 160-µm-diameter rare-earth-doped microring lasers using silicon-compatible methods. Pump light injection and laser output coupling are achieved via an integrated silicon nitride waveguide. We measure internal quality factors of up to 3.8 × 105 at 980 nm and 5.7 × 105 at 1550 nm in undoped microrings. In erbium- and ytterbium-doped microrings we observe single-mode 1.5-µm and 1.0-µm laser emission with slope efficiencies of 0.3 and 8.4%, respectively. Their small footprints, tens of microwatts output powers and sub-milliwatt thresholds introduce such rare-earth-doped microlasers as scalable light sources for silicon-based microphotonic devices and systems.

  12. Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Zhu, Xiaolong; Xiao, Sanshui


    -optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we...... comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching...

  13. Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth (United States)

    Ackert, Jason J.; Fiorentino, Marco; Logan, Dylan F.; Beausoleil, Raymond G.; Jessop, Paul E.; Knights, Andrew P.


    We have devised and fabricated high-speed silicon-on-insulator resonant microring photodiodes. The detectors comprise a p-i-n junction across a silicon rib waveguide microring resonator. Light absorption at 1550 nm is enhanced by implanting the diode intrinsic region with boron ions at 350 keV with a dosage of 1 × 1013 cm-2. We have measured 3-dB bandwidths of 2.4 and 3.5 GHz at 5 and 15 V reverse bias, respectively, and observed an open-eye diagram at 5 gigabit/s with 5 V bias.

  14. Comparison of wavelength conversion efficiency between silicon waveguide and microring resonator

    DEFF Research Database (Denmark)

    Xiong, Meng; Ding, Yunhong; Ou, Haiyan


    Wavelength conversion based on degenerate four-wave mixing (FWM) was demonstrated and compared between silicon nanowire and microring resonator (MRR). 15 dB enhancement of conversion efficiency (CE) with relatively low input pump power (5 mW) was achieved experimentally in an MRR. The impacts of ...

  15. Generation of a 640 Gbit/s NRZ OTDM signal using a silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Hu, Hao; Galili, Michael


    in a highly nonlinear fiber. Second, RZ-to-NRZ format conversion is achieved in a specially designed silicon microring resonator with FSR of 1280 GHz, Q value of 638, high extinction ratio and low coupling loss to optical fiber. A 640 Gbit/s NRZ OTDM signal with very clear eye-diagram and narrower bandwidth...

  16. Cascadability of Silicon Microring Resonators for40-Gbit/s OOK and DPSK Optical Signals

    DEFF Research Database (Denmark)

    Ozolins, Oskars; An, Yi; Lali-Dastjerdi, Zohreh


    The cascadability of a single silicon micro-ring resonator for CSRZ-OOK and CSRZ-DPSK signals is experimentally demonstrated at 40 Gbit/s for the first time. Error-free performance is obtained for both modulation formats after 5 cascaded resonators....

  17. BER evaluation of a low-crosstalk silicon integrated multi-microring network-on-chip. (United States)

    Gambini, Fabrizio; Faralli, Stefano; Pintus, Paolo; Andriolli, Nicola; Cerutti, Isabella


    The operation of an integrated silicon-photonics multi-microring network-on-chip (NoC) is experimentally demonstrated in terms of transmission spectra and bit error rates at 10 Gb/s. The integrated NoC consists of 8 thermally tuned microrings coupled to a central ring. The switching functionalities are tested with concurrent transmissions at both the same and different wavelengths. Experimental results validate the analytical model based on the transfer matrix method. BER measurements show performance up to 10(-9) at 10 Gb/s with limited crosstalk and penalty (below 0.5 dB) induced by an interfering transmission.

  18. Widely tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi


    We propose and demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator microring resonators. The phase-shifting range and the RF-power variation are analyzed. A maximum phase-shifting range of 0~600° is achieved by utilizing a dual-microring resonator....... A quasi-linear phase shift of 360° with RF-power variation lower than 2dB and a continuous 270° phase shift without RF-power variation at a microwave frequency of 40GHz are also demonstrated....

  19. All-optical 10 Gb/s AND logic gate in a silicon microring resonator

    DEFF Research Database (Denmark)

    Xiong, Meng; Lei, Lei; Ding, Yunhong


    An all-optical AND logic gate in a single silicon microring resonator is experimentally demonstrated at 10 Gb/s with 50% RZ-OOK signals. By setting the wavelengths of two intensity-modulated input pumps on the resonances of the microring resonator, field-enhanced four-wave mixing with a total input...... power of only 8.5 dBm takes place in the ring, resulting in the generation of an idler whose intensity follows the logic operation between the pumps. Clear and open eye diagrams with a bit-error- ratio below 10−9 are achieved....

  20. Actively stabilized silicon microrings with integrated surface-state-absorption photodetectors using a slope-detection method. (United States)

    Li, Yu; Poon, Andrew W


    We propose and experimentally demonstrate actively stabilized silicon microrings with integrated surface-state-absorption (SSA) photodetectors using a slope-detection method. Our proof-of-concept experiments reveal that the active stabilization using multiple discrete-step slope thresholds can effectively reduce the microring transmitted intensity variations upon various temperature modulation conditions. We demonstrate an actively stabilized microring transmission with intensity modulations within ~2.5 dB upon a 5mHz temperature modulation between 17 °C and 31 °C, which is ~7.5dB improved from without stabilization. The active alignment tolerance between the stabilized microring resonance wavelength and a carrier wavelength is ~0.16 nm over a 14°C temperature modulation. We observe open eye-diagrams at a data transmission rate of up to 30 Gb/s under temperature modulations with actively stabilized silicon microrings.

  1. Thermal effect analysis of silicon microring optical switch for on-chip interconnect (United States)

    Fang, Xiongfeng; Yang, Lin


    The silicon microring resonator plays an important role in large-scale, high-integrability modern switching matrixes and optical networks, as silicon photonics enables ring resonators of an unprecedented compact size. But as the nature of resonators is their sensitivity to temperature, their performances are vulnerable to being affected by thermal effect. In this paper, we analyze the dominant thermal effects to the application of silicon microring optical switch. On the one hand we theoretically analyze and experimentally measure the thermal crosstalk among adjacent microring optical switches with different distances, and give possible solutions to minimize the affect of thermal crosstalk. On the other hand we analyze and measure the thermooptic dynamic response of microring switch; the experiment shows for the thermal-tuning that the rising edge is around 2 μs, and the falling edge is around 35 μs. We give the explanation of the asymmetric rise-time and fall-time. Project supported by the Natural National Science Foundation of China (Nos. 61235001, 61575187, 61535002).

  2. RZ-to-NRZ format conversion at 50 Gbit/s based on a silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Pu, Minhao


    We demonstrate RZ-to-NRZ format conversion at 50 Gbit/s based on silicon microring resonator with FSR of 100 GHz. Bit error rate measurements show a low power penalty compared to electrical NRZ signal for error free operation.......We demonstrate RZ-to-NRZ format conversion at 50 Gbit/s based on silicon microring resonator with FSR of 100 GHz. Bit error rate measurements show a low power penalty compared to electrical NRZ signal for error free operation....

  3. Photon pair generation from compact silicon microring resonators using microwatt-level pump powers

    CERN Document Server

    Savanier, Marc; Mookherjea, Shayan


    Microring resonators made from silicon, using deep ultraviolet lithography fabrication processes which are scalable and cost-effective, are becoming a popular microscale device format for generating photon pairs at telecommunications wavelengths at room temperature. In compact devices with a footprint less than $5\\times 10^{-4}$ mm$^2$, we demonstrate pair generation using only a few microwatts of average pump power. We discuss the role played by important parameters such as the loss, group-velocity dispersion and the ring-waveguide coupling coefficient in finding the optimum operating point for silicon microring pair generation. Such small devices and low pump power requirements could be beneficial for future scaled-up architectures with many pair-generation devices on the same chip, which will be required to create quasi-deterministic pure single photon sources from inherently statistical processes such as spontaneous four-wave mixing.

  4. Optically-controlled extinction ratio and Q-factor tunable silicon microring resonators based on optical forces (United States)

    Long, Yun; Wang, Jian


    Tunability is a desirable property of microring resonators to facilitate superior performance. Using light to control light, we present an alternative simple approach to tuning the extinction ratio (ER) and Q-factor of silicon microring resonators based on optical forces. We design an opto-mechanical tunable silicon microring resonator consisting of an add-drop microring resonator and a control-light-carrying waveguide (``controlling'' waveguide). One of the two bus waveguides of the microring resonator is a deformable nanostring put in parallel with the ``controlling'' waveguide. The tuning mechanism relies on the optical force induced deflection of suspended nanostring, leading to the change of coupling coefficient of microring and resultant tuning of ER and Q-factor. Two possible geometries, i.e. double-clamped nanostring and cantilever nanostring, are studied in detail for comparison. The obtained results imply a favorable structure with the microring positioned at the end of the cantilever nanostring. It features a wide tuning range of ER from 5.6 to 39.9 dB and Q-factor from 309 to 639 as changing the control power from 0 to 1.4 mW.

  5. Multi-Channel 40 Gbit/s NRZ-DPSK Demodulation Using a Single Silicon Microring Resonator


    Ding, Yunhong; Xu, Jing; Peucheret, Christophe; Pu, Minhao; Liu, Liu; Seoane, Jorge; Ou, Haiyan; Zhang, Xinliang; Huang, Dexiu


    We comprehensively analyze the demodulation of wavelength division multiplexed (WDM) non return-to-zero differential phase-shift keying (NRZ-DPSK) signals by a single microring resonator. Simultaneous demodulation of multiple 40 Gbit/s WDM NRZ-DPSK channels is demonstrated using a single silicon microring resonator with free spectral range (FSR) of 100 GHz. Bit error measurements show very good performance for both through and drop port demodulations for all channels, and the drop port demodu...

  6. Athermal silicon nitride ring resonator by photobleaching of Disperse Red 1-doped poly(methyl methacrylate) polymer. (United States)

    Qiu, Feng; Yu, Feng; Spring, Andrew M; Yokoyama, Shiyoshi


    To fabricate athermal silicon nitride waveguides, the dimensions of both the core and cladding, refractive index, and thermo-optic coefficients must be controlled precisely. We present a simple and effective method for the postfabrication trimming of silicon nitride ring resonators that overcomes the highly demanding fabrication. In order to manipulate the polymer's refractive index and thermo-optic coefficient, we bleached the Disperse Red 1-doped poly(methyl methacrylate) (DR1/PMMA) top cladding using UV irradiation. After a suitable bleaching time, the temperature-dependent wavelength shift of the ring resonator was reduced from -9.8 to -0.018 pm/°C, which is the lowest shift that we are aware of for an athermal waveguide realized by overlaying a polymer cladding to date.

  7. Demonstration of a 3-bit optical digital-to-analog converter based on silicon microring resonators. (United States)

    Yang, Lin; Ding, Jianfeng; Chen, Qiaoshan; Zhou, Ping; Zhang, Fanfan; Zhang, Lei


    We propose an N-bit optical digital-to-analog converter based on silicon microring resonators (MRRs), which can transform an N-bit electrical digital signal to an optical analog signal. A 3-bit optical digital-to-analog convertor is fabricated as proof of concept through a CMOS-compatible process on a silicon-on-insulator platform. The silicon MRRs are modulated through the electric-field-induced carrier injection in forward biased PN junctions embedded in the ring waveguides. The electro-optical 3-dB bandwidths of the silicon MRRs are approximately 800 MHz. The device works well at a speed of 500  MSample/s under driving voltage swings of 0.75 V.

  8. Telecom-band degenerate-frequency photon pair generation in silicon microring cavities. (United States)

    Guo, Yuan; Zhang, Wei; Dong, Shuai; Huang, Yidong; Peng, Jiangde


    In this Letter, telecom-band degenerate-frequency photon pairs are generated in a specific mode of a silicon microring cavity by the nondegenerate spontaneous four-wave mixing (SFWM) process, under two continuous-wave pumps at resonance wavelength of two different cavity modes. The ratio of coincidence to accidental coincidence is up to 100 under a time bin width of 5 ns, showing their characteristics of quantum correlation. Their quantum interference in balanced and unbalanced Mach-Zehnder interferometers is investigated theoretically and experimentally, and the results show potential in quantum metrology and quantum information.

  9. Sagnac loop mirror and micro-ring based laser cavity for silicon-on-insulator. (United States)

    Zhang, Yi; Yang, Shuyu; Guan, Hang; Lim, Andy Eu-Jin; Lo, Guo-Qiang; Magill, Peter; Baehr-Jones, Tom; Hochberg, Michael


    An integrated laser is a key component in silicon based photonic integrated circuits. Beyond incorporating the gain medium, on-chip cavity design is critical to device performance and yield. Typical recent results involve cavities utilizing distributed Bragg gratings that require ultra-fine feature sizes. We propose to build laser cavity on silicon using a Sagnac loop mirror and a micro-ring wavelength filter for the first time. The Sagnac loop mirror provides broadband reflection, which is simple to fabricate, has an accurately-controlled reflectivity, and negligible excess loss. Single-mode operation is achieved with the intra-cavity micro-ring filter and, using a 248 nm stepper, the laser wavelength can be lithographically controlled within a standard deviation of 3.6 nm. We demonstrate a proof-of-concept device lasing at 1551.7 nm, with 44 dB SMSR, 1.2 MHz linewidth and 4.8 mW on-chip output power.

  10. Athermal silicon optical add-drop multiplexers based on thermo-optic coefficient tuning of sol-gel material. (United States)

    Namnabat, Soha; Kim, Kyung-Jo; Jones, Adam; Himmelhuber, Roland; DeRose, Christopher T; Trotter, Douglas C; Starbuck, Andrew L; Pomerene, Andrew; Lentine, Anthony L; Norwood, Robert A


    Silicon photonics has gained interest for its potential to provide higher efficiency, bandwidth and reduced power consumption compared to electrical interconnects in datacenters and high performance computing environments. However, it is well known that silicon photonic devices suffer from temperature fluctuations due to silicon's high thermo-optic coefficient and therefore, temperature control in many applications is required. Here we present an athermal optical add-drop multiplexer fabricated from ring resonators. We used a sol-gel inorganic-organic hybrid material as an alternative to previously used materials such as polymers and titanium dioxide. In this work we studied the thermal curing parameters of the sol-gel and their effect on thermal wavelength shift of the rings. With this method, we were able to demonstrate a thermal shift down to -6.8 pm/°C for transverse electric (TE) polarization in ring resonators with waveguide widths of 325 nm when the sol-gel was cured at 130°C for 10.5 hours. We also achieved thermal shifts below 1 pm/°C for transverse magnetic (TM) polarization in the C band under different curing conditions. Curing time compared to curing temperature shows to be the most important factor to control sol-gel's thermo-optic value in order to obtain an athermal device in a wide temperature range.

  11. Tunable complex-valued multi-tap microwave photonic filter based on single silicon-oninsulator microring resonator

    DEFF Research Database (Denmark)

    Lloret, Juan; Sancho, Juan; Pu, Minhao


    A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonator is presented. The degree of tunability of the approach involving two, three and four taps is theoretical and experimentally characterized, respectively. The constraints...... of exploiting the optical phase transfer function of a microring resonator aiming at implementing complex-valued multi-tap filtering schemes are also reported. The trade-off between the degree of tunability without changing the free spectral range and the number of taps is studied in-depth. Different window...... based scenarios are evaluated for improving the filter performance in terms of the side-lobe level....

  12. Development of silicon photonic microring resonator biosensors for multiplexed cytokine assays and in vitro diagnostics (United States)

    Luchansky, Matthew Sam

    In order to guide critical care therapies that are personalized to a patient's unique disease state, a diagnostic or theranostic medical device must quickly provide a detailed biomolecular understanding of disease onset and progression. This detailed molecular understanding of cellular processes and pathways requires the ability to measure multiple analytes in parallel. Though many traditional sensing technologies for biomarker analysis and fundamental biological studies (i.e. enzyme-linked immunosorbent assays, real-time polymerase chain reaction, etc.) rely on single-parameter measurements, it has become increasingly clear that the inherent complexity of many human illnesses and pathways necessitates quantitative and multiparameter analysis of biological samples. Currently used analytical methods are deficient in that they often provide either highly quantitative data for a single biomarker or qualitative data for many targets, but methods that simultaneously provide highly quantitative analysis of many targets have yet to be adequately developed. Fields such as medical diagnostics and cellular biology would benefit greatly from a technology that enables rapid, quantitative and reproducible assays for many targets within a single sample. In an effort to fill this unmet need, this doctoral dissertation describes the development of a clinically translational biosensing technology based on silicon photonics and developed in the chemistry research laboratory of Ryan C. Bailey. Silicon photonic microring resonators, a class of high-Q optical sensors, represent a promising platform for rapid, multiparameter in vitro measurements. The original device design utilizes 32-ring arrays for real-time biomolecular sensing without fluorescent labels, and these optical biosensors display great potential for more highly multiplexed (100s-1000s) measurements based on the impressive scalability of silicon device fabrication. Though this technology can be used to detect a variety of

  13. Zwitterionic polymer-modified silicon microring resonators for label-free biosensing in undiluted human plasma (United States)

    Kirk, James T.; Brault, Norman D.; Baehr-Jones, Tom; Hochberg, Michael; Jiang, Shaoyi; Ratner, Daniel M.


    A widely acknowledged goal in personalized medicine is to radically reduce the costs of highly parallelized, small fluid volume, point-of-care and home-based diagnostics. Recently, there has been a surge of interest in using complementary metal-oxide-semiconductor (CMOS)-compatible silicon photonic circuits for biosensing, with the promise of producing chip-scale integrated devices containing thousands of orthogonal sensors, at minimal cost on a per-chip basis. A central challenge in biosensor translation is to engineer devices that are both sensitive and specific to a target analyte within unprocessed biological fluids. Despite advances in the sensitivity of silicon photonic biosensors, poor biological specificity at the sensor surface remains a significant factor limiting assay performance in complex media (i.e. whole blood, plasma, serum) due to the non-specific adsorption of proteins and other biomolecules. Here, we chemically modify the surface of silicon microring resonator biosensors for the label-free detection of an analyte in undiluted human plasma. This work highlights the first application of a non-fouling zwitterionic surface coating to enable silicon photonic-based label-free detection of a protein analyte at clinically relevant sensitivities in undiluted human plasma. PMID:23202337

  14. Subpicometer thermal shifts in silicon photonic micro-ring resonators with sol-gel claddings (Conference Presentation) (United States)

    Namnabat, Soha; Kim, Kyung-Jo; Jones, Adam M.; Himmelhuber, Roland; DeRose, Christopher T.; Pomerene, Andrew; Lentine, Tony L.; Norwood, Robert A.


    Electronic interconnects are reaching their limit in terms of speed, dimensions and permissible power consumption. This has been a major concern in data centers and large scale computing platforms, creating limits to their scalability especially with respect to power consumption. Silicon photonic-electronic integration is viewed as a viable alternative that enables reliability, high efficiency, low cost and small footprint. In particular, silicon with its high refractive index, has enabled the integration a many individual optical elements (ring resonators) in small areas. Though silicon has a high thermo-optic coefficient (1.8×10^-4/°C) compared to silica, small thermal fluctuations can affect the optical performance especially for WDM applications. Therefore, a passive athermal solution for silicon photonic devices is required in order to reduce thermal sensitivity and power consumption. We have achieved this goal by replacing the silica top cladding with negative thermo-optic coefficient (TOC) materials. While polymers and titanium dioxide(titania) have a negative TOC, polymers can't handle high temperature processing and titania needs very tight thickness control and expensive deposition under vacuum. In this work we propose to use a sol-gel inorganic-organic hybrid material that has the benefits of both worlds. We were able to find optimum curing conditions to athermalize ring resonators by studying various sol-gel curing times and curing temperatures. Our athermal rings operate in a wide temperature range from 5C - 100C with thermal shifts below 1pm/C and low loss. Furthermore, we demonstrate that our athermal approach does not deleteriously effect critical device parameters, such as insertion loss and resonator Q factors.

  15. Generation of hyper-entanglement on polarization and energy-time based on a silicon micro-ring cavity. (United States)

    Suo, Jing; Dong, Shuai; Zhang, Wei; Huang, Yidong; Peng, Jiangde


    In this paper, hyper-entanglement on polarization and energy-time is generated based on a silicon micro-ring cavity. The silicon micro-ring cavity is placed in a fiber loop connected by a polarization beam splitter. Photon pairs are generated by the spontaneous four wave mixing (SFWM) in the cavity bi-directionally. The two photon states of photon pairs propagate along the two directions of the fiber loop and are superposed in the polarization beam splitter with orthogonal polarizations, leading to the polarization entanglement generation. On the other hand, the energy-time entanglement is an intrinsic property of photon pairs generated by the SFWM, which maintains in the process of the state superposition. The property of polarization entanglement is demonstrated by the two photon interferences under two non-orthogonal polarization bases. The property of energy-time entanglement is demonstrated by the Franson type interference under two non-orthogonal phase bases. The raw visibilities of all the measured interference fringes are higher than 1/2, the bench mark for violation of the Bell inequality. It indicates that silicon micro-ring cavity is a promising candidate to realize high performance hyper-entanglement generation.

  16. Thermal nonlinear effect in high Q factor silicon-on-insulator microring resonator (United States)

    Xiaogang, Tong; Jun, Liu; Chenyang, Xue


    In this paper, all-optical switching in silicon-on-insulator (SOI) serially coupled ring resonator based on thermal nonlinear effect is proposed. The radii of the silicon microring resonator are 10 μm. In experiment, firstly measured by single pump injection technology with vertical coupling surface grating coupler method, the highest notch of serially coupled ring resonator is 17 dB. The strong transverse light-confinement nature of the resonator induces nonlinear optical response with low pump power. Thermal nonlinear effect is achieved by controlling the power of the continuous-wave (CW) pump with very low tuning threshold (0.33 nm). And the slop of resonant wavelength as a function of injected pump is 220 pm/mw. Secondly, switching time measured by two pump injection technology is 3.01 μs and 1.03 μs, respectively. Which could be used in integrated photonic communication circuits based optical logic and slow-light structure.

  17. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators (United States)

    Gostimirovic, Dusan; Ye, Winnie N.


    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  18. Rectangular optical filter based on high-order silicon microring resonators (United States)

    Bao, Jia-qi; Yu, Kan; Wang, Li-jun; Yin, Juan-juan


    The rectangular optical filter is one of the most important optical switching components in the dense wavelength division multiplexing (DWDM) fiber-optic communication system and the intelligent optical network. The integrated highorder silicon microring resonator (MRR) is one of the best candidates to achieve rectangular filtering spectrum response. In general, the spectrum response rectangular degree of the single MRR is very low, so it cannot be used in the DWDM system. Using the high-order MRRs, the bandwidth of flat-top pass band, the out-of-band rejection degree and the roll-off coefficient of the edge will be improved obviously. In this paper, a rectangular optical filter based on highorder MRRs with uniform couplers is presented and demonstrated. Using 15 coupled race-track MRRs with 10 μm in radius, the 3 dB flat-top pass band of 2 nm, the out-of-band rejection ratio of 30 dB and the rising and falling edges of 48 dB/nm can be realized successfully.

  19. Fabrication of amorphous micro-ring arrays in crystalline silicon using ultrashort laser pulses (United States)

    Fuentes-Edfuf, Yasser; Garcia-Lechuga, Mario; Puerto, Daniel; Florian, Camilo; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan


    We demonstrate a simple way to fabricate amorphous micro-rings in crystalline silicon using direct laser writing. This method is based on the fact that the phase of a thin surface layer can be changed into the amorphous phase by irradiation with a few ultrashort laser pulses (800 nm wavelength and 100 fs duration). Surface-depressed amorphous rings with a central crystalline disk can be fabricated without the need for beam shaping, featuring attractive optical, topographical, and electrical properties. The underlying formation mechanism and phase change pathway have been investigated by means of fs-resolved microscopy, identifying fluence-dependent melting and solidification dynamics of the material as the responsible mechanism. We demonstrate that the lateral dimensions of the rings can be scaled and that the rings can be stitched together, forming extended arrays of structures not limited to annular shapes. This technique and the resulting structures may find applications in a variety of fields such as optics, nanoelectronics, and mechatronics.

  20. Silicon-based all-optical multi microring network-on-chip. (United States)

    Pintus, Paolo; Contu, Pietro; Raponi, Pier Giorgio; Cerutti, Isabella; Andriolli, Nicola


    An optical multi microring network-on-chip (MMR NoC) is proposed and evaluated through numerical simulations. The network architecture consists of a central resonating microring with local microrings connected to the input/output ports. A mathematical model based on the transfer matrix method is used to assess the MMR NoC performance and to analyze the fabrication tolerances. Results show that the proposed architecture exhibits a limited coherent crosstalk with a bandwidth suitable for 10  Gb/s signals, and it is robust to coupling ratio variations and ring radii fabrication inaccuracies.

  1. Compact, lower-power-consumption wavelength tunable laser fabricated with silicon photonic-wire waveguide micro-ring resonators. (United States)

    Chu, Tao; Fujioka, Nobuhide; Ishizaka, Masashige


    A wavelength tunable laser with an SOA and external double micro-ring resonator, which is fabricated with silicon photonic-wire waveguides, is demonstrated. To date, it is the first wavelength tunable laser fabricated with silicon photonic technology. The device is ultra compact, and its external resonator footprint is 700 x 450 microm, which is about 1/25 that of conventional tunable lasers fabricated with SiON waveguides. The silicon resonator shows a wide tuning range covering the C or L bands for DWDM optical communication. We obtained a maximum tuning span of 38 nm at a tuning power consumption of 26 mW, which is about 1/8 that of SiON-type resonators.

  2. Multi-channel WDM RZ-to-NRZ format conversion at 50 Gbit/s based on single silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Pu, Minhao


    We comprehensively analyze multiple WDM channels RZ-to- NRZ format conversion using a single microring resonator. The scheme relies on simultaneous suppression of the first order harmonic components in the spectra of all the RZ channels. An optimized silicon microring resonator with free spectral...... range of 100 GHz and Q value of 7900 is designed and fabricated for this purpose. Multi-channel RZ-to-NRZ format conversion is demonstrated experimentally at 50 Gbit/s for WDM channels with 200 GHz channel spacing using the fabricated device. Bit error rate (BER)measurements show very good conversion...

  3. Simultaneous RZ-OOK to NRZ-OOK and RZ-DPSK to NRZ-DPSK format conversion in a silicon microring resonator

    DEFF Research Database (Denmark)

    Xiong, Meng; Ozolins, Oskars; Ding, Yunhong


    Simultaneous RZ-OOK to NRZ-OOK and RZ-DPSK to NRZDPSK modulation format conversion in a single silicon microring resonator with free spectral range equal to twice the signal bit rate is experimentally demonstrated for the first time at 41.6 Gb/s. By utilizing an optimized custom-made microring re...... resonator with high coupling coefficient followed by an optical bandpass filter with appropriate bandwidth, good conversion performances for both modulation formats are achieved according to the converted signals eye diagrams and bit-error-rate measurements....

  4. Silicon photonic micro-ring resonators to sense strain and ultrasound

    NARCIS (Netherlands)

    Westerveld, W.J.


    We demonstrated that photonic micro-ring resonators can be used in micro-machined ultrasound microphones. This might cause a breakthrough in array transducers for ultrasonography; first because optical multiplexing allows array interrogation via one optical fiber and second because the

  5. Silicon-photonic PTAT temperature sensor for micro-ring resonator thermal stabilization. (United States)

    Saeedi, Saman; Emami, Azita


    We present a scheme for thermal stabilization of micro-ring resonator modulators through direct measurement of ring temperature using a monolithic PTAT temperature sensor. The measured temperature is used in a feedback loop to adjust the thermal tuner of the ring. The closed-loop feedback system is demonstrated to operate in presence of thermal perturbations at 20Gb/s.

  6. Helium Cryo Testing of a SLMS(TM) (Silicon Lightweight Mirrors) Athermal Optical Assembly (United States)

    Jacoby, Marc T.; Goodman, William A.; Stahl, H. Philip; Keys, Andrew S.; Reily, Jack C.; Eng, Ron; Hadaway, James B.; Hogue, William D.; Kegley, Jeffrey R.; Siler, Richard


    SLMS (TM) a thermal technology has been demonstrated in the small 4-foot helium cryogenic test chamber located at the NASA/MSFC X-Ray Calibration Facility (XRCF). A SLMS (TM) Ultraviolet Demonstrator Mirror (UVDM) produced by Schafer under a NASA/MSFC Phase I SBIR was helium cryo tested both free standing and bonded to a Schafer designed prototype carbon fiber reinforced silicon carbide (Cesic) mount. Surface figure data was obtained with a test measurement system that featured an Instantaneous Phase Interferometer (IPI) by ADE Phase Shift. The test measurement system s minimum resolvable differential figure deformation and possible contributions from test chamber ambient to cryo window deformation are under investigation. The free standing results showed differential figure deformation of 10.4 nm rms from 295K to 27K and 3.9 nm rms after one cryo cycle. The surface figure of the UVDM degraded by lambda/70 rms HeNe once it was bonded to the prototype Cesic mount. The change was due to a small astigmatic aberration in the rototype Cesic mount due to lack of finish machining and not the bonding technique. This effect was seen in SLMST (TM) optical assembly results, which showed differential figure deformation of 46.5 nm rms from 294K to 27K, 42.9 nm rms from 294K to 77K, 28.0 nm rms from 294K to 193K and 6.2 nm rms after one cryo cycle.

  7. Experimental demonstration of an optical Feynman gate for reversible logic operation using silicon micro-ring resonators (United States)

    Tian, Yonghui; Liu, Zilong; Ying, Tonghe; Xiao, Huifu; Meng, Yinghao; Deng, Lin; Zhao, Yongpeng; Guo, Anqi; Liao, Miaomiao; Liu, Guipeng; Yang, Jianhong


    Currently, the reversible logic circuit is a popular research topic in the field of information processing as it is a most effective approach to minimize power consumption, which can achieve the one-to-one mapping function to identify the input signals from its corresponding output signals. In this letter, we propose and experimentally demonstrate an optical Feynman gate for reversible logic operation using silicon micro-ring resonators (MRRs). Two electrical input signals (logic operands) are applied across the micro-heaters above MRRs to determine the switching states of MRRs, and the reversible logic operation results are directed to the output ports in the form of light, respectively. For proof of concept, the thermo-optic modulation scheme is used to achieve MRR's optical switching function. At last, a Feynman gate for reversible logic operation with the speed of 10 kbps is demonstrated successfully.

  8. Experimental demonstration of an optical Feynman gate for reversible logic operation using silicon micro-ring resonators

    Directory of Open Access Journals (Sweden)

    Tian Yonghui


    Full Text Available Currently, the reversible logic circuit is a popular research topic in the field of information processing as it is a most effective approach to minimize power consumption, which can achieve the one-to-one mapping function to identify the input signals from its corresponding output signals. In this letter, we propose and experimentally demonstrate an optical Feynman gate for reversible logic operation using silicon micro-ring resonators (MRRs. Two electrical input signals (logic operands are applied across the micro-heaters above MRRs to determine the switching states of MRRs, and the reversible logic operation results are directed to the output ports in the form of light, respectively. For proof of concept, the thermo-optic modulation scheme is used to achieve MRR’s optical switching function. At last, a Feynman gate for reversible logic operation with the speed of 10 kbps is demonstrated successfully.

  9. Continuously tunable photonic fractional Hilbert transformer using a high-contrast germanium-doped silica-on-silicon microring resonator. (United States)

    Shahoei, Hiva; Dumais, Patrick; Yao, Jianping


    We propose and experimentally demonstrate a continuously tunable fractional Hilbert transformer (FHT) based on a high-contrast germanium-doped silica-on-silicon (SOS) microring resonator (MRR). The propagation loss of a high-contrast germanium-doped SOS waveguide can be very small (0.02 dB/cm) while the lossless bend radius can be less than 1 mm. These characteristics lead to the fabrication of an MRR with a high Q-factor and a large free-spectral range (FSR), which is needed to implement a Hilbert transformer (HT). The SOS MRR is strongly polarization dependent. By changing the polarization direction of the input signal, the phase shift introduced at the center of the resonance spectrum is changed. The tunable phase shift at the resonance wavelength can be used to implement a tunable FHT. A germanium-doped SOS MRR with a high-index contrast of 3.8% is fabricated. The use of the fabricated MRR for the implementation of a tunable FHT with tunable orders at 1, 0.85, 0.95, 1.05, and 1.13 for a Gaussian pulse with the temporal full width at half-maximum of 80 ps is experimentally demonstrated.

  10. Multi-Channel 40 Gbit/s NRZ-DPSK Demodulation Using a Single Silicon Microring Resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Xu, Jing; Peucheret, Christophe


    microring resonator with free spectral range (FSR) of 100 GHz. Bit error measurements show very good performance for both through and drop port demodulations for all channels, and the drop port demodulation exhibits better wavelength detuning tolerance than for demodulation using a Mach-Zehnder delay...... interferometer (MZDI)....

  11. Compact pulley-type microring resonator with high quality factor (United States)

    Cai, Dong-Po; Lu, Jyun-Hong; Chen, Chii-Chang; Lee, Chien-Chieh; Lin, Chu-En; Yen, Ta-Jen


    A pulley-type microring resonator with ultra-small dimensions and ultra-high quality factor on a silicon-on-insulator wafer is fabricated and characterized. Simulation results show that the bending loss of the pulley-type microring resonator can be diminished by wrapping the curved waveguide around the microring, and that the energy loss from the output port can be decreased by tuning the width of the bus waveguide to achieve destructive interference. A quality factor of 1.73 × 105 is obtained in this experiment. The compact size of the pulley-type microring resonator with low bending loss is suitable for an integrated optical circuit.

  12. Athermalized channeled spectropolarimeter enhancement.

    Energy Technology Data Exchange (ETDEWEB)

    Jones, Julia Craven; Way, Brandyn Michael; Mercier, Jeffrey Alan; Hunt, Jeffery P.


    Channeled spectropolarimetry can measure the complete polarization state of light as a function of wavelength. Typically, a channeled spectropolarimeter uses high order retarders made of uniaxial crystal to amplitude modulate the measured spectrum with the spectrally-dependent Stokes polarization information. A primary limitation of conventional channeled spectropolarimeters is related to the thermal variability of the retarders. Thermal variation often forces frequent system recalibration, particularly for field deployed systems. However, implementing thermally stable retarders, made of biaxial crystal, results in an athermal channeled spectropolarimeter that relieves the need for frequent recalibration. This report presents experimental results for an anthermalized channeled spectropolarimeter prototype produced using potassium titanyl phosphate. The results of this prototype are compared to the current thermal stabilization state of the art. Finally, the application of the technique to the thermal infrared is studied, and the athermalization concept is applied to an infrared imaging spectropolarimeter design.

  13. Experimental demonstration of a 24-port packaged multi-microring network-on-chip in silicon photonic platform. (United States)

    Gambini, Fabrizio; Pintus, Paolo; Faralli, Stefano; Chiesa, Marco; Preve, Giovan Battista; Cerutti, Isabella; Andriolli, Nicola


    A 24-port packaged multi-microring optical network-on-chip has been tested for simultaneous co- and counter-propagating transmissions at the same wavelength at 10 Gbps. In the co-propagating scenario communications up to five hops with one interfering signal have been tested, together with transmissions impaired by up to three interfering signals. In the counter-propagating scenario the device performance has been investigated exploiting the ring resonators in both shared-source and shared-destination configurations. The spectral characterization is in good agreement with the theoretical results. Bit-error-rate measurements indicate power penalties at BER=10 -9 limited to (i) 0.5 dB in the co-propagating scenarios independently from the number of interfering transmissions, (ii) 0.8 dB in the counter-propagating scenario with shared-source configuration, and (iii) 2 dB in the counter-propagating scenario with shared-destination configuration.

  14. Resonance control of a silicon micro-ring resonator modulator under high-speed operation using the intrinsic defect-mediated photocurrent. (United States)

    Wang, Zhao; Paez, Dixon; El-Rahman, Ahmed I Abd; Wang, Peng; Dow, Liam; Cartledge, John C; Knights, Andrew P


    A method to stabilize the resonance wavelength of a depletion-type silicon micro-ring resonator modulator during high-speed operation is described. The method utilizes the intrinsic defect-mediated photo-absorption of a silicon waveguide and results in a modulator chip fabrication process that is free of heterogeneous integration (for example using germanium), thus significantly reducing the complexity and cost of manufacture. Residual defects, present after p-n junction formation, are found to produce an adequate photocurrent for use as a feedback signal, while an integrated heater is used to compensate for thermal drift via closed-loop control. The photocurrent is measured by a source-meter, which simultaneously provides a DC bias to the integrated heater during high-speed operation. A drop-port or an integrated extrinsic detector is not needed. This feedback control method is experimentally demonstrated via a computer-aided proportional-integral-differential loop. The resonance locking is validated for 12.5 Gb/s intensity modulation in a back-to-back bit-error-rate measurement. The stabilization method described is not limited to a specific modulator design and is compatible with speeds greatly in excess of 12.5 Gb/s, in contrast to the bandwidth limitation of other stabilization methods that rely on intrinsic photo-carrier generation through non-linear processes such as two-photon-absorption. Further, the use of intrinsic defects present after standard fabrication insures that no excess loss is associated with this stabilization method.

  15. Athermal photofluidization of glasses (United States)

    Fang, G. J.; Maclennan, J. E.; Yi, Y.; Glaser, M. A.; Farrow, M.; Korblova, E.; Walba, D. M.; Furtak, T. E.; Clark, N. A.


    Azobenzene and its derivatives are among the most important organic photonic materials, with their photo-induced trans-cis isomerization leading to applications ranging from holographic data storage and photoalignment to photoactuation and nanorobotics. A key element and enduring mystery in the photophysics of azobenzenes, central to all such applications, is athermal photofluidization: illumination that produces only a sub-Kelvin increase in average temperature can reduce, by many orders of magnitude, the viscosity of an organic glassy host at temperatures more than 100 K below its thermal glass transition. Here we analyse the relaxation dynamics of a dense monolayer glass of azobenzene-based molecules to obtain a measurement of the transient local effective temperature at which a photo-isomerizing molecule attacks its orientationally confining barriers. This high temperature (Tloc~800 K) leads directly to photofluidization, as each absorbed photon generates an event in which a local glass transition temperature is exceeded, enabling collective confining barriers to be attacked with near 100% quantum efficiency.

  16. Modulation Speed Enhancement of Directly Modulated Lasers Using a Micro-ring Resonator

    DEFF Research Database (Denmark)

    An, Yi; Lorences Riesgo, Abel; Seoane, Jorge


    A silicon micro-ring resonator is used to enhance the modulation speed of a 10-Gbit/s directly modulated laser to 40 Gbit/s, demonstrating a potentially integratable transmitter design for high-speed optical interconnects....

  17. Compact hybrid Si microring lasers (United States)

    Liang, Di; Bowers, John E.; Fiorentino, Marco; Beausoleil, Raymond G.


    In this paper we review the recent progress in developing compact microring lasers on the hybrid silicon platform. A simplified self-aligned process is used to fabricate devices as small as 15 μm in diameter. The optically-pumped, continuous wave (cw) devices show low threshold carrier density, comparable to the carrier density to reach material transparency. In the electrically-pumped lasers, the short cavity length leads to the minimum laser threshold less than 5 mA in cw operation. The maximum cw lasing temperature is up to 65 °C. Detailed studies in threshold as a function of coupling coefficient and bus waveguide width are presented. Surface recombination at the dry-etched exposed interface is investigated qualitatively by studying the current-voltage characteristics. Ring resonator-based figures of merits including good spectral purity and large side-mode suppression ratio are demonstrated. Thermal impedance data is extracted from temperature-dependent spectral measurement, and buried oxide layer in silicon-on-insulator wafer is identified as the major thermal barrier to cause high thermal impedance for small-size devices. The demonstrated compact hybrid ring lasers have low power consumption, small footprint and dynamic performance. They are promising for Si-based optical interconnects and flip-flop applications.

  18. All-optical clock recovery from 40 Gbit/s RZ signal based on microring resonators. (United States)

    Xiong, Meng; Ding, Yunhong; Zhang, Qiang; Zhang, Xinliang


    A scheme for high-speed clock recovery from return-to-zero (RZ) signal with microring resonators is presented. By using a silicon microring resonator (MRR) for clock extraction and a 3-order nonlinear series-coupled microring resonator (SCMR) for amplitude equalization, clock pulses with amplitude modulation less than 1 dB can be obtained. The proposed scheme is also designed and numerically studied by 3D full vectorial film mode matching method (FMM) and coupled mode theory (CMT). Simulation results show that clock can be recovered at 40 Gbit/s with short rise- and fall- times.

  19. Transmission Property of Directly Modulated Signals Enhanced by a Micro-ring Resonator

    DEFF Research Database (Denmark)

    An, Yi; Lorences Riesgo, Abel; Seoane, Jorge


    A silicon micro-ring resonator is used to enhance the modulation speed of a 10-Gbit/s directly modulated laser to 40 Gbit/s. The generated signal is transmitted error free over 4.5 km SSMF. Dispersion tolerance is also studied.......A silicon micro-ring resonator is used to enhance the modulation speed of a 10-Gbit/s directly modulated laser to 40 Gbit/s. The generated signal is transmitted error free over 4.5 km SSMF. Dispersion tolerance is also studied....

  20. High-q microring resonator with narrow free spectral range for pulse repetition rate multiplication

    DEFF Research Database (Denmark)

    Pu, Minhao; Ji, Hua; Frandsen, Lars Hagedorn


    We demonstrate a silicon-on-insulator microring resonator with a free-spectral-range of 0.32 nm, an extinction ratio of 27 dB, and a quality factor of ~140900 at 1550 nm that is used for pulse repetition-rate multiplication from 10 to 40 GHz.......We demonstrate a silicon-on-insulator microring resonator with a free-spectral-range of 0.32 nm, an extinction ratio of 27 dB, and a quality factor of ~140900 at 1550 nm that is used for pulse repetition-rate multiplication from 10 to 40 GHz....

  1. Binary phase-shift keying by coupling modulation of microrings. (United States)

    Sacher, Wesley D; Green, William M J; Gill, Douglas M; Assefa, Solomon; Barwicz, Tymon; Khater, Marwan; Kiewra, Edward; Reinholm, Carol; Shank, Steven M; Vlasov, Yurii A; Poon, Joyce K S


    We propose a coupling-modulated microring in an add-drop configuration for binary phase-shift keying (BPSK), where data is encoded as 0 and π radian phase-shifts on the optical carrier. The device uses the π radian phase-flip across the zero coupling point in a 2 × 2 Mach-Zehnder interferometer coupler to produce the modulation. The coupling-modulated microring combines the drive power reduction of resonant modulators with the digital phase response of Mach-Zehnder BPSK modulators. A proof-of-concept device was demonstrated in silicon-on-insulator, showing differential binary phase-shift keying operation at 5 and 10 Gb/s.

  2. Protein detection on biotin-derivatized polyallylamine by optical microring resonators

    NARCIS (Netherlands)

    Ullien, D.; Harmsma, P.J.; Chakkalakkal Abdulla, S.M.C.; Boer, B.M. de; Bosma, D.; Sudhölter, E.J.R.; Smet, L.C.P.M. de; Jager, W.F.


    Silicon optical microring resonators (MRRs) are sensitive devices that can be used for biosensing. We present a novel biosensing platform based on the application of polyelectrolyte (PE) layers on such MRRs. The top PE layer was covalently labeled with biotin to ensure binding sites for antibodies

  3. 41.6 Gb/s RZ-DPSK to NRZ-DPSK Format Conversion in a Microring Resonator

    DEFF Research Database (Denmark)

    Xiong, Meng; Ozolins, Oskars; Ding, Yunhong


    RZ-DPSK to NRZ-DPSK format conversion in a silicon microring resonator is demonstrated experimentally for the first time at 41.6 Gb/s. The converted signal eye diagrams and bit-error-rate measurements show the good performance of the scheme........RZ-DPSK to NRZ-DPSK format conversion in a silicon microring resonator is demonstrated experimentally for the first time at 41.6 Gb/s. The converted signal eye diagrams and bit-error-rate measurements show the good performance of the scheme.....

  4. Spontaneous crystallization in athermal polymer packings. (United States)

    Karayiannis, Nikos Ch; Foteinopoulou, Katerina; Laso, Manuel


    We review recent results from extensive simulations of the crystallization of athermal polymer packings. It is shown that above a certain packing density, and for sufficiently long simulations, all random assemblies of freely-jointed chains of tangent hard spheres of uniform size show a spontaneous transition into a crystalline phase. These polymer crystals adopt predominantly random hexagonal close packed morphologies. An analysis of the local environment around monomers based on the shape and size of the Voronoi polyhedra clearly shows that Voronoi cells become more spherical and more symmetric as the system transits to the ordered state. The change in the local environment leads to an increase in the monomer translational contribution to the entropy of the system, which acts as the driving force for the phase transition. A comparison of the crystallization of hard-sphere polymers and monomers highlights similarities and differences resulting from the constraints imposed by chain connectivity.

  5. Spontaneous Crystallization in Athermal Polymer Packings

    Directory of Open Access Journals (Sweden)

    Nikos Ch. Karayiannis


    Full Text Available We review recent results from extensive simulations of the crystallization of athermal polymer packings. It is shown that above a certain packing density, and for sufficiently long simulations, all random assemblies of freely-jointed chains of tangent hard spheres of uniform size show a spontaneous transition into a crystalline phase. These polymer crystals adopt predominantly random hexagonal close packed morphologies. An analysis of the local environment around monomers based on the shape and size of the Voronoi polyhedra clearly shows that Voronoi cells become more spherical and more symmetric as the system transits to the ordered state. The change in the local environment leads to an increase in the monomer translational contribution to the entropy of the system, which acts as the driving force for the phase transition. A comparison of the crystallization of hard-sphere polymers and monomers highlights similarities and differences resulting from the constraints imposed by chain connectivity.

  6. Athermal operation of multi-section slotted tunable lasers. (United States)

    Wallace, M J; O'Reilly Meehan, R; Enright, R; Bello, F; McCloskey, D; Barabadi, B; Wang, E N; Donegan, J F


    Two distinct athermal bias current procedures based on thermal tuning are demonstrated for a low-cost, monotlithic, three section slotted single mode laser, achieving mode-hop free wavelength stability of ± 0.04 nm / 5 GHz over a temperature range of 8-47 °C. This is the first time that athermal performance has been demonstrated for a three-section slotted laser with simple fabrication, and is well within the 50 GHz grid spacing specified for DWDM systems. This performance is similar to experiments on more complex DS-DBR lasers, indicating that strong athermal performance can be achieved using our lower-cost three section devices. An analytical model and thermoreflectance measurements provide further insight into the operation of multi-section lasers and lay the foundation for an accurate predictive tool for optimising such devices for athermal operation.

  7. Echoes of the Glass Transition in Athermal Soft Spheres (United States)

    Morse, Peter K.; Corwin, Eric I.


    Recent theoretical advances have led to the creation of a unified phase diagram for the thermal glass and athermal jamming transitions. This diagram makes clear that, while related, the mode-coupling—or dynamic—glass transition is distinct from the jamming transition, occurring at a finite temperature and significantly lower density than the jamming transition. Nonetheless, we demonstrate a prejamming transition in athermal frictionless spheres which occurs at the same density as the mode-coupling transition and is marked by percolating clusters of locally rigid particles. At this density in both the thermal and athermal systems, individual motions of an extensive number of particles become constrained, such that only collective motion is possible. This transition, which is well below jamming, exactly matches the definition of collective behavior at the dynamical transition of glasses. Thus, we reveal that the genesis of rigidity in both thermal and athermal systems is governed by the same underlying topological transition in their shared configuration space.

  8. Inline microring reflector for photonic applications (United States)

    Kang, Young Mo

    The microring is a compact resonator that is used as a versatile building block in photonic circuits ranging from filters, modulators, logic gates, sensors, switches, multiplexers, and laser cavities. The Bragg grating is a periodic structure that allows the selection of a narrow bandwidth of spectrum for stable lasing operation. In this dissertation, we study analysis and simulations of a compact microring based reflector assembled by forming a Bragg grating into a loop. With the appropriate design, the microring resonance can precisely align with the reflection peak of the grating while all other peaks are suppressed by reflection nulls of the grating. The field buildup at the resonance effectively amplifies small reflection of the grating, thereby producing significant overall reflection from the ring, and it is possible to achieve a stable narrow linewidth compact laser by forming a single mode laser cavity. The device operation principle is studied from two distinct perspectives; the first looks at coupling of two contra-directional traveling waves within the ring whereas the second aspect investigates relative excitation of the two competing microring resonant modes. In the former method, we relate the steady state amplitudes of the two traveling waves to the reflection spectrum of the grating and solve for the reflection and transmission response for each wavelength of interest. In the latter approach, we expand the field in terms of the resonant modes of the ring cavity and derive transfer functions for reflection and transmission from the nearby mode frequencies. The angular periodicity of the reflective microring geometry allows us to effectively simulate the resonant modes from a computational domain of a single period grating when the continuity boundary condition is applied. We successfully predict the reflection and transmission response of a Si3N 4/SiO2 microring reflector using this method---otherwise too large to carry out full-wave simulation

  9. Submicron optical waveguides and microring resonators fabricated by selective oxidation of tantalum. (United States)

    Rabiei, Payam; Ma, Jichi; Khan, Saeed; Chiles, Jeff; Fathpour, Sasan


    Submicron tantalum pentoxide ridge and channel optical waveguides and microring resonators are demonstrated on silicon substrates by selective oxidation of the refractory metal, tantalum. The novel method eliminates the surface roughness problem normally introduced during dry etching of waveguide sidewalls and also simplifies fabrication of directional couplers. It is shown that the measured propagation loss is independent of the waveguide structure and thereby limited by the material loss of tantalum pentoxide in waveguides core regions. The achieved microring resonators have cross-sectional dimensions of ~600 nm × ~500 nm, diameters as small as 80 µm with a quality, Q, factor of 4.5 × 10(4), and a finesse of 120.

  10. PECASE: New Directions for Silicon Integrated Optics (United States)


    silicon microring resonators for label-free biosensing in undiluted human plasma,” Biosensors and Bioelectronics 42 (2013) A widely acknowledged...resonators as high sensitivity biosensors will be discussed. The results of the research including scientific publications and patents are...demonstrating mid-infrared integrated optics in silicon and pursuing new investigations into using silicon resonators as high sensitivity biosensors . A

  11. Refractive index-based detection of gradient elution liquid chromatography using chip-integrated microring resonator arrays. (United States)

    Wade, James H; Bailey, Ryan C


    Refractive index-based sensors offer attractive characteristics as nondestructive and universal detectors for liquid chromatographic separations, but a small dynamic range and sensitivity to minor thermal perturbations limit the utility of commercial RI detectors for many potential applications, especially those requiring the use of gradient elutions. As such, RI detectors find use almost exclusively in sample abundant, isocratic separations when interfaced with high-performance liquid chromatography. Silicon photonic microring resonators are refractive index-sensitive optical devices that feature good sensitivity and tremendous dynamic range. The large dynamic range of microring resonators allows the sensors to function across a wide spectrum of refractive indices, such as that encountered when moving from an aqueous to organic mobile phase during a gradient elution, a key analytical advantage not supported in commercial RI detectors. Microrings are easily configured into sensor arrays, and chip-integrated control microrings enable real-time corrections of thermal drift. Thermal controls allow for analyses at any temperature and, in the absence of rigorous temperature control, obviates extended detector equilibration wait times. Herein, proof of concept isocratic and gradient elution separations were performed using well-characterized model analytes (e.g., caffeine, ibuprofen) in both neat buffer and more complex sample matrices. These experiments demonstrate the ability of microring arrays to perform isocratic and gradient elutions under ambient conditions, avoiding two major limitations of commercial RI-based detectors and maintaining comparable bulk RI sensitivity. Further benefit may be realized in the future through selective surface functionalization to impart degrees of postcolumn (bio)molecular specificity at the detection phase of a separation. The chip-based and microscale nature of microring resonators also make it an attractive potential detection

  12. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.


    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

  13. Athermal and widely tunable VCSEL with bimorph micromachined mirror. (United States)

    Nakahama, Masanori; Sakaguchi, Takahiro; Matustani, Akihiro; Koyama, Fumio


    We demonstrate an athermal and electrostatically-tunable 850 nm-band MEMS VCSEL for the first time. The thermal wavelength drift is compensated by the thermal actuation of a cantilever-suspended mirror with a bimorph effect. At the same time, the resonant wavelength can be continuously tuned by electro-static force as a voltage is applied in the cantilever structure. A continuous wavelength tuning of 10 nm is obtained with a low thermal wavelength drift, which is 10 times smaller than that of conventional VCSELs. Our athermal and tunable VCSELs enable us to reduce the channel spacing in course wavelength division multiplexing optical interconnects even under uncooled operations.

  14. Conversion between EIT and Fano spectra in a microring-Bragg grating coupled-resonator system (United States)

    Zhang, Zecen; Ng, Geok Ing; Hu, Ting; Qiu, Haodong; Guo, Xin; Wang, Wanjun; Rouifed, Mohamed Saïd; Liu, Chongyang; Wang, Hong


    A conversion between the electromagnetically induced transparency (EIT) transmission and Fano transmission is theoretically and experimentally demonstrated in an all-pass microring-Bragg grating (APMR-BG) coupled-resonator system. In this work, the coupling between the two resonators (the microring resonator and the Fabry-Perot resonator formed by two Bragg gratings) gives rise to the EIT and Fano transmissions. The resonant status strongly depends on the round-trip attenuation of the microring and the coupling strength. By tuning the coupling strength, the EIT and Fano transmissions can be controlled and converted. The device performance has been theoretically calculated and analyzed with a specially developed numerical model based on the transfer matrix method. The APMR-BG coupled-resonator systems with different gap widths were designed, fabricated, and characterized on a silicon-on-insulator (SOI) platform. The conversion of resonance was experimentally observed and verified. In addition, this on-chip system has the advantage of a small footprint, and the fabrication process is compatible with the planar waveguide fabrication process.

  15. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

  16. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) proposes to manufacture new silicon carbide (SiC) foam-based optics that are composite, athermal and lightweight (FOCAL) that provide...

  17. Athermal avalanche in bilayer superconducting nanowire single-photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Verma, V. B., E-mail:; Lita, A. E.; Stevens, M. J.; Mirin, R. P.; Nam, S. W. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)


    We demonstrate that two superconducting nanowires separated by a thin insulating barrier can undergo an avalanche process. In this process, Joule heating caused by a photodetection event in one nanowire and the associated production of athermal phonons which are transmitted through the barrier cause the transition of the adjacent nanowire from the superconducting to the normal state. We show that this process can be utilized in the fabrication of superconducting nanowire single photon detectors to improve the signal-to-noise ratio, reduce system jitter, maximize device area, and increase the external efficiency over a very broad range of wavelengths. Furthermore, the avalanche mechanism may provide a path towards a superconducting logic element based on athermal gating.

  18. A-thermal elastic behavior of silicate glasses (United States)

    Rabia, Mohammed Kamel; Degioanni, Simon; Martinet, Christine; Le Brusq, Jacques; Champagnon, Bernard; Vouagner, Dominique


    Depending on the composition of silicate glasses, their elastic moduli can increase or decrease as function of the temperature. Studying the Brillouin frequency shift of these glasses versus temperature allows the a-thermal composition corresponding to an intermediate glass to be determined. In an intermediate glass, the elastic moduli are independent of the temperature over a large temperature range. For sodium alumino-silicate glasses, the a-thermal composition is close to the albite glass (NaAlSi3O8). The structural origin of this property is studied by in situ high temperature Raman scattering. The structure of the intermediate albite glass and of silica are compared at different temperatures between room temperature and 600 °C. When the temperature increases, it is shown that the high frequency shift of the main band at 440 cm-1 in silica is a consequence of the cristobalite-like alpha-beta transformation of 6-membered rings. This effect is stronger in silica than bond elongation (anharmonic effects). As a consequence, the elastic moduli of silica increase as the temperature increases. In the albite glass, the substitution of 25% of Si4+ ions by Al3+ and Na+ ions decreases the proportion of SiO2 6-membered rings responsible for the silica anomaly. The effects of the silica anomaly balance the anharmonicity in albite glass and give rise to an intermediate a-thermal glass. Different networks, formers or modifiers, can be added to produce different a-thermal glasses with useful mechanical or chemical properties.

  19. Elastic regimes of sub-isostatic athermal fiber networks


    Licup, Albert James; Sharma, Abhinav; MacKintosh, Fred C.


    Athermal models of disordered fibrous networks are highly useful for studying the mechanics of elastic networks composed of stiff biopolymers. The underlying network architecture is a key aspect that can affect the elastic properties of these systems, which include rich linear and nonlinear elasticity. Existing computational approaches have focused on both lattice-based and off-lattice networks obtained from the random placement of rods. It is not obvious, a priori, whether the two architectu...

  20. Trap-door optical buffering using a flat-top coupled microring filter: the superluminal cavity approach. (United States)

    Scheuer, Jacob; Shahriar, M S


    We propose and analyze theoretically a trap-door optical buffer based on a coupled microrings flat-top add/drop filter (ADF). By tuning one of the microrings into and out of resonance we can effectively open and close the buffer trap door and, consequently, trap and release optical pulses. To attain a maximally flat filter we present a new design approach utilizing the concept of a white light cavity to attain an ADF that resonates over a wide spectral band. We show that the resulting ADF exhibits superior performance in terms of bandwidth and flatness compared to previous design approaches. We also present a realistic silicon-on-insulator-based design and a performance analysis, taking into consideration the realistic properties and limitations of the materials and the fabrication process, leading to delays exceeding 5 ns for an 80 GHz bandwidth and a corresponding delay-bandwidth product of approximately 400.

  1. Simultaneous Polarization Demultiplexing and Demodulation of PolMux-DPSK Signals in a Silicon Chip

    DEFF Research Database (Denmark)

    Huang, Bo; Ding, Yunhong; Ou, Haiyan


    Simultaneous polarization demultiplexing and demodulation of PolMux-DPSK signals is demonstrated using a polarization splitter and rotator together with a single microring resonator on a silicon chip. System experimental results validate the concept.......Simultaneous polarization demultiplexing and demodulation of PolMux-DPSK signals is demonstrated using a polarization splitter and rotator together with a single microring resonator on a silicon chip. System experimental results validate the concept....

  2. Athermal design and analysis of glass-plastic hybrid lens (United States)

    Yang, Jian; Cen, Zhaofeng; Li, Xiaotong


    With the rapid development of security market, the glass-plastic hybrid lens has gradually become a choice for the special requirements like high imaging quality in a wide temperature range and low cost. The reduction of spherical aberration is achieved by using aspherical surface instead of increasing the number of lenses. Obviously, plastic aspherical lens plays a great role in the cost reduction. However, the hybrid lens has a priority issue, which is the large thermal coefficient of expansion of plastic, causing focus shift and seriously affecting the imaging quality, so the hybrid lens is highly sensitive to the change of temperature. To ensure the system operates normally in a wide temperature range, it is necessary to eliminate the influence of temperature on the hybrid lens system. A practical design method named the Athermal Material Map is summarized and verified by an athermal design example according to the design index. It includes the distribution of optical power and selection of glass or plastic. The design result shows that the optical system has excellent imaging quality at a wide temperature range from -20 ° to 70 °. The method of athermal design in this paper has generality which could apply to optical system with plastic aspherical surface.

  3. Hybrid silicon ring lasers (United States)

    Liang, Di; Fiorentino, Marco; Bowers, John E.; Beausoleil, Raymond G.


    Hybrid silicon platform provides a solution to integrate active components (lasers, amplifiers, photodetectors, etc.) with passive ones on the same silicon substrate, which can be used for building an optical interconnect system. Owing to the advantages in footprint, power consumption, and high-speed modulation, hybrid silicon microring lasers have been demonstrated as a potential candidate for on-chip silicon light source. In this paper we review the progress to improve the performance of recently demonstrated compact microring lasers with ring diameter of 50 μm. A simple approach to enhance optical mode and electron-hole recombination, which results in threshold reduction and efficiency improvement is developed. This is done by appropriately undercutting the multiple quantum well (MQW) region to force carriers to flow towards the outer edge of the microring for better gain/optical mode overlap. We observe a reduction of the threshold of over 20% and up to 80% output power enhancement. The model and the experimental results highlight the benefits, as well as the negative effects from excessive undercutting, including lower MQW confinement, higher modal loss and higher thermal impedance. A design rule for MQW undercutting is therefore provided. Application as on-chip optical interconnects is discussed from a system perspective.

  4. Organic printed photonics: From microring lasers to integrated circuits. (United States)

    Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng


    A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 10(5), which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

  5. Electro-optic directed XOR logic circuits based on parallel-cascaded micro-ring resonators. (United States)

    Tian, Yonghui; Zhao, Yongpeng; Chen, Wenjie; Guo, Anqi; Li, Dezhao; Zhao, Guolin; Liu, Zilong; Xiao, Huifu; Liu, Guipeng; Yang, Jianhong


    We report an electro-optic photonic integrated circuit which can perform the exclusive (XOR) logic operation based on two silicon parallel-cascaded microring resonators (MRRs) fabricated on the silicon-on-insulator (SOI) platform. PIN diodes embedded around MRRs are employed to achieve the carrier injection modulation. Two electrical pulse sequences regarded as two operands of operations are applied to PIN diodes to modulate two MRRs through the free carrier dispersion effect. The final operation result of two operands is output at the Output port in the form of light. The scattering matrix method is employed to establish numerical model of the device, and numerical simulator SG-framework is used to simulate the electrical characteristics of the PIN diodes. XOR operation with the speed of 100Mbps is demonstrated successfully.

  6. Compact infrared camera (CIRC) for earth observation adapting athermal optics (United States)

    Kato, Eri; Katayama, Haruyoshi; Naitoh, Masataka; Harada, Masatomo; Nakamura, Ryoko; Nakau, Koji; Sato, Ryota


    We have developed the compact infrared camera (CIRC) with an uncooled infrared array detector (microbolometer) for space application. The main mission of the CIRC is the technology demonstration of the wildfire detection using a large format (640×480) microbolometer. Wildfires are major and chronic disasters affecting numerous countries, especially in the Asia-Pacific region, and may get worse with global warming and climate change. Microbolometers have an advantage of not requiring cooling systems such an a mechanical cooler, and is suitable for resource-limited sensor systems or small satellites. Main characteristic of the CIRC is also an athermal optics. The thermal optics compensates the defocus due to the temperature change by using Germanium and Chalcogenide glass which have different coefficient of thermal expansion and temperature dependence of refractive index. The CIRC achieves a small size, light weight, and low electrical power by employing the athermal optics and a shutter-less system. Two CIRCs will be carried as a technology demonstration payload of ALOS-2 and JEM-CALET, which will be launched in JFY 2013 and 2014, respectively. We have finished the ground calibration test of the CIRC Proto Flight Model (PFM). Athermal optical performance of the CIRC have been confirmed by measuring modulation transfer function (MTF) in a vacuum environment and at environmental temperature from -15 to 50 °C. As a result, MTF was found to be effective at capturing clear images across the entire range of operating temperatures. We also provide an overview of the CIRC and radiometric test results in this presentation.

  7. Double positive effect of adding hexaethyelene glycol when optimizing the hybridization efficiency of a microring DNA detection assay

    Energy Technology Data Exchange (ETDEWEB)

    Van Eeghem, Anabelle, E-mail: [Polymer Chemistry and Biomaterials Research Group, Department of Organic and Macromolecular Chemistry, Ghent University (Belgium); Center for Nano- and Biophotonics, Ghent University (Belgium); Werquin, Sam [Center for Nano- and Biophotonics, Ghent University (Belgium); Photonics Research Group, Department of Information Technology, Ghent University – IMEC (Belgium); Hoste, Jan-Willem, E-mail: [Center for Nano- and Biophotonics, Ghent University (Belgium); Photonics Research Group, Department of Information Technology, Ghent University – IMEC (Belgium); Goes, Arne [Polymer Chemistry and Biomaterials Research Group, Department of Organic and Macromolecular Chemistry, Ghent University (Belgium); Agrosavfe NV, Technologiepark 4 (Bio-incubator), Zwijnaarde (Belgium); Vanderleyden, Els [Polymer Chemistry and Biomaterials Research Group, Department of Organic and Macromolecular Chemistry, Ghent University (Belgium); Center for Nano- and Biophotonics, Ghent University (Belgium); Bienstman, Peter [Center for Nano- and Biophotonics, Ghent University (Belgium); Photonics Research Group, Department of Information Technology, Ghent University – IMEC (Belgium); Dubruel, Peter [Polymer Chemistry and Biomaterials Research Group, Department of Organic and Macromolecular Chemistry, Ghent University (Belgium); Center for Nano- and Biophotonics, Ghent University (Belgium)


    Highlights: • The hybridization efficiency of a DNA assay was investigated based on SOI microring resonators. • A 4-fold increase in efficiency was obtained by using HEG as backfilling agent, as well as improving robustness. • The dual polarization microring technique shows that HEG reorients the DNA in an upright position. • Hybridizing at 35 °C and with a buffer containing 50 v/v% of formamide greatly improves the robustness. - Abstract: In this paper, a method for detection of DNA molecules using silicon-on-insulator (SOI) microring resonators is described. The influence of temperature and the use of formamide on the hybridization efficiency were studied. It was shown that 50 v/v% of formamide in the hybridization buffer can ensure hybridization when working close to physiological temperature. Furthermore, the use of hexaethylene glycol (HEG) as backfilling agent was studied in order to resolve issues of non-specific adsorption to the surface. The results indicated that not only non-specific binding was reduced significantly but also that HEG improves the orientation of the DNA probes on the surface. This led to a 4-fold increase in hybridization efficiency and thus in an equal decrease in the detection limit, compared to hybridization without the use of HEG. An improvement in robustness of the assay was also observed. This DNA reorientation hypothesis was confirmed by studying the thickness and density of the layers by using dual polarization microring sensing. Finally, the different steps in the sensing experiment were characterized in more detail by static contact angle (SCA) and X-ray photoelectron spectroscopy (XPS) analysis. The results showed quantitatively that the surface modifications were successful.

  8. Study of propagation modes of bent waveguides and micro-ring resonators by means of the aperiodic Fourier modal method (United States)

    Bucci, Davide; Martin, Bruno; Morand, Alain


    In the last years, several numerical methods have been studied and applied to the analysis of high index contrast bent waveguides. Very often, the problem is treated using a conformal mapping, which translates the bending into an equivalent graded index profile and a straight waveguide. In this article, we discuss the implementation of a full vectorial 2D mode solver by means of the Aperiodic Fourier Modal Method, developed directly in cylindrical coordinates. This does not require the conformal mapping technique. In the first part of our work, we develop a shorthand notation and the mathematical rules useful to describe the problem in a matrix form. The calculation of propagation modes is then reconducted to the search of eigenvectors of a matrix. We will at first confront our formulation in 1D with results described in the literature. In a second time, we will use the complete 2D solver to determine the resonance frequencies and the quality factors of micro-ring resonators made on silicon surrounded by silica. These characteristics are indeed related to the real and imaginary parts of the propagation constants. By comparison with 3D-FDTD analysis, we will show that our implementation can be used to accurately describe the behavior of micro-rings having a bending radius as low as 1.1 μm in the near infrared region. This technique is general and can be applied to any micro-ring having an arbitrary cross-section and a quality factor which is less than 10000. Perspectives of this work include the study of the field propagation in a bent structure, as well as the coupling between micro-ring resonators and straight waveguides.

  9. Eight-channel reconfigurable microring filters with tunable frequency, extinction ratio and bandwidth. (United States)

    Shen, Hao; Khan, Maroof H; Fan, Li; Zhao, Lin; Xuan, Yi; Ouyang, Jing; Varghese, Leo T; Qi, Minghao


    We demonstrate an eight-channel reconfigurable optical filter on a silicon chip. It consists of cascaded microring resonators and integrated compact heaters. With an embedded Mach-Zehnder (MZ) arm coupling to a microring resonator, the important parameters of a filter such as center frequency, extinction ratio and bandwidth can be controlled simultaneously for purposes of filtering, routing and spectral shaping. Thus our device could potentially be useful in dense wavelength division multiplexing (DWDM) and radio frequency arbitrary waveform generation (RFAWG). Multichannel filter response was successfully tuned to match the International Telecommunication Unit (ITU) grid with 50, 100 and 200 GHz in channel spacing. Programmable channel selectivity was demonstrated by heating the MZ arm, and continuous adjustment of through-port extinction ratio from 0 dB to 27 dB was achieved. Meanwhile, the 3 dB bandwidth in the drop port changed from 0.12 nm to 0.16 nm. The device had an ultra-compact footprint (1200 microm x 100 microm) excluding the metal leads and contact pads, making it suitable for large scale integration.

  10. Highly sensitive detection using microring resonator and nanopores (United States)

    Bougot-Robin, K.; Hoste, J. W.; Le Thomas, N.; Bienstman, P.; Edel, J. B.


    One of the most significant challenges facing physical and biological scientists is the accurate detection and identification of single molecules in free-solution environments. The ability to perform such sensitive and selective measurements opens new avenues for a large number of applications in biological, medical and chemical analysis, where small sample volumes and low analyte concentrations are the norm. Access to information at the single or few molecules scale is rendered possible by a fine combination of recent advances in technologies. We propose a novel detection method that combines highly sensitive label-free resonant sensing obtained with high-Q microcavities and position control in nanoscale pores (nanopores). In addition to be label-free and highly sensitive, our technique is immobilization free and does not rely on surface biochemistry to bind probes on a chip. This is a significant advantage, both in term of biology uncertainties and fewer biological preparation steps. Through combination of high-Q photonic structures with translocation through nanopore at the end of a pipette, or through a solid-state membrane, we believe significant advances can be achieved in the field of biosensing. Silicon microrings are highly advantageous in term of sensitivity, multiplexing, and microfabrication and are chosen for this study. In term of nanopores, we both consider nanopore at the end of a nanopipette, with the pore being approach from the pipette with nanoprecise mechanical control. Alternatively, solid state nanopores can be fabricated through a membrane, supporting the ring. Both configuration are discussed in this paper, in term of implementation and sensitivity.

  11. Fiber Bragg grating interrogation using a micro-ring resonator tunable filter with peak wavelength detection enhancement (United States)

    Vargas, German


    This work presents a demodulation technique using a silicon micro-ring resonator that extracts wavelength information from a FBG sensor. The device implements an interrogation system employing a signal processing technique that translates the peak wavelength position of a FBG spectral line into a time interval measurement. To determine the peaks, three techniques were applied. One was based on a simple maximum detection algorithm, the other two, enhanced the detected signal by applying a finite impulse filter (FIR) and a smoothing filter. Results show an improvement of the wavelength measurement using the filtering technique compared to the maximum peak detection.

  12. Ultrasensitive Detection of Testosterone Using Microring Resonator with Molecularly Imprinted Polymers

    Directory of Open Access Journals (Sweden)

    Yangqing Chen


    Full Text Available We report ultrasensitive and highly selective detection of testosterone based on microring resonance sensor using molecularly imprinted polymers (MIP. A silicon-on-insulator (SOI micoring resonator was modified by MIP films (MIPs on a surface. The MIPs was synthesized by thermopolymerization using methacrylic acid as functional monomer and ethylene glycol dimethacrylate as crosslinking agent. The concentration of detected testosterone varies from 0.05 ng/mL to 10 ng/mL. The detection limit reaches 48.7 pg/mL. Ultrahigh sensitivity, good specificity and reproducibility have been demonstrated, indicating the great potential of making a cost effective and easy to operate lab-on-Chip and down scaling micro-fluidics devices in biosensing.

  13. Optical thresholder consisting of two cascaded Mach-Zehnder interferometers with nonlinear microring resonators (United States)

    Kishikawa, Hiroki; Kondo, Tadashi; Goto, Nobuo; Talabattula, Srinivas


    We propose an optical thresholder having a flat power transfer function both in low- and high-level outputs. The optical thresholder consists of two cascaded Mach-Zehnder interferometers (MZIs) with a nonlinear microring resonator in each MZI. We theoretically analyze the power transfer function and the response speed of the thresholder made of silicon waveguides. A thresholder having the threshold of 7 mW with a response speed of 13 GHz was obtained with a ring radius of 5 μm. The response speed can be increased to 23.7 GHz by adjusting device parameters with the same ring radius at the cost of increased threshold of 22 mW. Further increased response frequency can be realized by reducing the ring radius. A thresholder with a ring radius of 2 μm shows the response frequency of 40.5 GHz.

  14. Mach-Zehnder wavelength selective switch embedded with microring resonators (United States)

    Miura, Kengo; Shoji, Yuya; Mizumoto, Tetsuya


    A wavelength selective switch is proposed for optical wavelength division multiplexing network applications with very short range interconnections. The proposed device uses a Mach-Zehnder interferometer configuration incorporating wavelength selective phase shifters composed of microring resonators between their two arms. Wavelength selectivity is provided by cascaded microring resonators, which are placed in proximity so that the increase in excess loss caused by the difference in resonant wavelengths can be minimized. An on/off switching ratio >20 dB is obtainable when the drop/through transmittance ratio of the cascaded microring resonators is >22 dB and the coupling efficiency deviation from 50% is directional couplers constructing the Mach-Zehnder interferometer.

  15. Phase coexistence in polydisperse athermal polymer-colloidal mixture. (United States)

    Hlushak, S P; Kalyuzhnyi, Yu V; Cummings, P T


    A theoretical scheme developed earlier [Y. V. Kalyuzhnyi et al., Chem. Phys. Lett. 443, 243 (2007)] is used to calculate the full phase diagram of polydisperse athermal polymer-colloidal mixture with polydispersity in both colloidal and polymeric components. In the limiting case of bidisperse polymer-colloidal mixture, theoretical results are compared against computer simulation results. We present the cloud and shadow curves, critical binodals, and distribution functions of the coexisting phases and discuss the effects of polydispersity on their behavior. According to our analysis polydispersity extends the region of the phase instability, shifting the critical point to the lower values of the pressure and density. For the high values of the pressure polydispersity causes strong fractionation effects, with the large size colloidal particles preferring the low-density shadow phase and long chain length polymeric particles preferring the high-density shadow phase.

  16. Controlling local order of athermal self-propelled particles (United States)

    Dougan, Niamh; Crowther, Peter; Royall, C. Patrick; Turci, Francesco


    We consider a model of self-propelled dynamics for athermal active particles, where the non-equilibrium active forces are modelled by a Ornstein-Uhlenbeck process. In the limit of no-driving force, the model reduces to the passive, Brownian dynamics of an atomistic glass forming fluid, the Wahnström binary mixture. The Wahnström mixture is known to show strong correlations between the emergence of slow dynamics and the formation of locally favoured structures based on icosahedra. Here, we study how the non-equilibrium driving affects the local structure of the system, and find that it strongly promotes icosahedral order. The states rich in local icosahedral order correspond to configurations of very low potential energy, suggesting that the non-equilibrium dynamics in the self propelled model can be effectively exploited to explore the potential energy surface of the binary mixture and have access to states that are difficult to attain using passive dynamics.

  17. Anomalous stress fluctuations in athermal two-dimensional amorphous solids (United States)

    Wu, Yegang; Karimi, Kamran; Maloney, Craig E.; Teitel, S.


    We numerically study the local stress distribution within athermal, isotropically stressed, mechanically stable, packings of bidisperse frictionless disks above the jamming transition in two dimensions. Considering the Fourier transform of the local stress, we find evidence for algebraically increasing fluctuations in both isotropic and anisotropic components of the stress tensor at small wave numbers, contrary to recent theoretical predictions. Such increasing fluctuations imply a lack of self-averaging of the stress on large length scales. The crossover to these increasing fluctuations defines a length scale ℓ0, however, it appears that ℓ0 does not vary much with packing fraction ϕ , nor does ℓ0 seem to be diverging as ϕ approaches the jamming ϕJ. We also find similar large length scale fluctuations of stress in the inherent states of a quenched Lennard-Jones liquid, leading us to speculate that such fluctuations may be a general property of amorphous solids in two dimensions.

  18. Athermalization of resonant optical devices via thermo-mechanical feedback (United States)

    Rakich, Peter; Nielson, Gregory N.; Lentine, Anthony L.


    A passively athermal photonic system including a photonic circuit having a substrate and an optical cavity defined on the substrate, and passive temperature-responsive provisions for inducing strain in the optical cavity of the photonic circuit to compensate for a thermo-optic effect resulting from a temperature change in the optical cavity of the photonic circuit. Also disclosed is a method of passively compensating for a temperature dependent thermo-optic effect resulting on an optical cavity of a photonic circuit including the step of passively inducing strain in the optical cavity as a function of a temperature change of the optical cavity thereby producing an elasto-optic effect in the optical cavity to compensate for the thermo-optic effect resulting on an optical cavity due to the temperature change.

  19. Electro-optic Charon polymeric microring modulators. (United States)

    Rezzonico, Daniele; Jazbinsek, Mojca; Guarino, Andrea; Kwon, O-Pil; Günter, Peter


    We propose and demonstrate a new type of electro-optic polymeric microring resonators, where the shape of the transmission spectrum is controlled by losses and phase shifts induced at the asymmetric directional coupler between the cavity and the bus waveguide. The theoretical analysis of such Charon microresonators shows, depending on the coupler design, three different transmission characteristics: normal Lorentzian dips, asymmetric Fano resonances, and Lorentzian peaks. The combination of the active azo-stilbene based polyimide SANDM2 surrounded by the hybrid polymer Ormocomp allowed the first experimental demonstration of electro-optic modulation in Charon microresonators. The low-loss modulators (down to 0.6 dB per round trip), with a radius of 50 microm, were produced by micro-embossing and exhibit either highly asymmetric and steep Fano resonances with large 43-GHz modulation bandwidth or strong resonances with 11-dB extinction ratio. We show that Charon microresonators can lead to 1-V half wave voltage all-polymer micrometer-scale devices with larger tolerances to coupler fabrication limitations and wider modulation bandwidths than classical ring resonators.

  20. A microring multimode laser using hollow polymer optical fibre

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 75; Issue 5. A microring ... Keywords. Dye-doped optical fibre; fibre laser; microcavity; whispering gallery mode. ... Cylindrical microcavities with diameters 155, 340 and 615 m were fabricated from a dye-doped hollow polymer optical fibre preform. An average mode ...

  1. Efficient absorption by monolayer graphene in microring resonator (United States)

    Liu, Ziyu


    We demonstrate a graphene photodetector based on a SOI microring resonator. The absorption of the graphene was enhanced by the resonating, so to improve the detection efficiency by 5 times. The impact of graphene’s position and length on the absorption rate was also been studied. The frequency selective effect shows the potential on spectrum detection and WDM photoelectric conversion.

  2. Athermally photoreduced graphene oxides for three-dimensional holographic images (United States)

    Li, Xiangping; Ren, Haoran; Chen, Xi; Liu, Juan; Li, Qin; Li, Chengmingyue; Xue, Gaolei; Jia, Jia; Cao, Liangcai; Sahu, Amit; Hu, Bin; Wang, Yongtian; Jin, Guofan; Gu, Min


    The emerging graphene-based material, an atomic layer of aromatic carbon atoms with exceptional electronic and optical properties, has offered unprecedented prospects for developing flat two-dimensional displaying systems. Here, we show that reduced graphene oxide enabled write-once holograms for wide-angle and full-colour three-dimensional images. This is achieved through the discovery of subwavelength-scale multilevel optical index modulation of athermally reduced graphene oxides by a single femtosecond pulsed beam. This new feature allows for static three-dimensional holographic images with a wide viewing angle up to 52 degrees. In addition, the spectrally flat optical index modulation in reduced graphene oxides enables wavelength-multiplexed holograms for full-colour images. The large and polarization-insensitive phase modulation over π in reduced graphene oxide composites enables to restore vectorial wavefronts of polarization discernible images through the vectorial diffraction of a reconstruction beam. Therefore, our technique can be leveraged to achieve compact and versatile holographic components for controlling light. PMID:25901676

  3. A Microring Resonator Based Negative Permeability Metamaterial Sensor

    Directory of Open Access Journals (Sweden)

    Yao-Zhong Lan


    Full Text Available Metamaterials are artificial multifunctional materials that acquire their material properties from their structure, rather than inheriting them directly from the materials they are composed of, and they may provide novel tools to significantly enhance the sensitivity and resolution of sensors. In this paper, we derive the dispersion relation of a cylindrical dielectric waveguide loaded on a negative permeability metamaterial (NPM layer, and compute the resonant frequencies and electric field distribution of the corresponding Whispering-Gallery-Modes (WGMs. The theoretical resonant frequency and electric field distribution results are in good agreement with the full wave simulation results. We show that the NPM sensor based on a microring resonator possesses higher sensitivity than the traditional microring sensor since with the evanescent wave amplification and the increase of NPM layer thickness, the sensitivity will be greatly increased. This may open a door for designing sensors with specified sensitivity.

  4. Photon pair generation in a lossy microring resonator. I. Theory


    Alsing, Paul M.; Hach III, Edwin E.


    We investigate entangled photon pair generation in a lossy microring resonator using an input-output formalism based on the work of Raymer and McKinstrie (Phys. Rev. A 88, 043819 (2013)) and Alsing, et al. (Phys. Rev. A 95, 053828 (2017)) that incorporates circulation factors that account for the multiple round trips of the fields within the cavity. We consider the nonlinear processes of spontaneous parametric down conversion and spontaneous four wave mixing, and we compute the generated biph...

  5. A Microring Temperature Sensor Based on the Surface Plasmon Wave

    Directory of Open Access Journals (Sweden)

    Wenchao Li


    Full Text Available A structure of microring sensor suitable for temperature measurement based on the surface plasmon wave is put forward in this paper. The sensor uses surface plasmon multilayer waveguiding structure in the vertical direction and U-shaped microring structure in the horizontal direction and utilizes SOI as the thermal material. The transfer function derivation of the structure of surface plasmon microring sensor is according to the transfer matrix method. While the change of refractive index of Si is caused by the change of ambient temperature, the effective refractive index of the multilayer waveguiding structure is changed, resulting in the drifting of the sensor output spectrum. This paper focuses on the transmission characteristics of multilayer waveguide structure and the impact on the output spectrum caused by refractive index changes in temperature parts. According to the calculation and simulation, the transmission performance of the structure is stable and the sensitivity is good. The resonance wavelength shift can reach 0.007 μm when the temperature is increased by 100 k and FSR can reach about 60 nm. This structure achieves a high sensitivity in the temperature sense taking into account a wide range of filter frequency selections, providing a theoretical basis for the preparation of microoptics.

  6. [A high sensitivity micro-ring humidity sensor based on U-shaped waveguide coupled single micro-ring structure]. (United States)

    Li, Zhi-quan; Wang, Lu-na; Li, Xin; Zhang, Xin


    The paper proposes a novel high sensitivity humidity sensor based on a U-shaped waveguide-coupled single micro-ring, Polyimide is used as the wet material, the refractive index of humidity-sensing part changes as relative humidity changes, thus leading to a obvious peak drift. The transfer function of the structure is derived basing on transfer matrix method and the paper mainly discusses the influence on the output spectrum with different humidity-sensing parts. Through the theoretical simulation of Matlab, the whole structure of U-shaped waveguide coupled single micro-ring is proved to be the best humidity-sensing part. The free spectral range (FSR) will be doubled compared to the traditional single micro ring structure while the length between the two coupling points of the U-shaped waveguide is an integer multiple of circumference of the micro-ring. When the relative humidity of external environment changes from 10% RH to 100% RH, the output spectrum appears a obvious drift from 0.027 to 0.191 microm and the sensitivity reaches up to 0.0018 microm/% RH. Compared to FBG humidity sensor with high sensitivity, the sensitivity in this article is increased by 10 to 100 times, achieving a high sensitivity in the sense of humidity when the wide range of filter frequency selection is taken into account.

  7. Optical solver for a system of ordinary differential equations based on an external feedback assisted microring resonator. (United States)

    Hou, Jie; Dong, Jianji; Zhang, Xinliang


    Systems of ordinary differential equations (SODEs) are crucial for describing the dynamic behaviors in various systems such as modern control systems which require observability and controllability. In this Letter, we propose and experimentally demonstrate an all-optical SODE solver based on the silicon-on-insulator platform. We use an add/drop microring resonator to construct two different ordinary differential equations (ODEs) and then introduce two external feedback waveguides to realize the coupling between these ODEs, thus forming the SODE solver. A temporal coupled mode theory is used to deduce the expression of the SODE. A system experiment is carried out for further demonstration. For the input 10 GHz NRZ-like pulses, the measured output waveforms of the SODE solver agree well with the calculated results.

  8. Experimental demonstration of a reconfigurable electro-optic directed logic circuit using cascaded carrier-injection micro-ring resonators. (United States)

    Tian, Yonghui; Liu, Zilong; Xiao, Huifu; Zhao, Guolin; Liu, Guipeng; Yang, Jianhong; Ding, Jianfeng; Zhang, Lei; Yang, Lin


    We experimentally demonstrate a reconfigurable electro-optic directed logic circuit which can perform any combinatorial logic operation using cascaded carrier-injection micro-ring resonators (MRRs), and the logic circuit is fabricated on the silicon-on-insulator (SOI) substrate with the standard commercial Complementary Metal-Oxide-Semiconductor (CMOS) fabrication process. PIN diodes embedded around MRRs are employed to achieve the carrier injection modulation. The operands are represented by electrical signals, which are applied to the corresponding MRRs to control their switching states. The operation result is directed to the output port in the form of light. For proof of principle, several logic operations of three-operand with the operation speed of 100 Mbps are demonstrated successfully.

  9. Anomalous anisotropy in athermal Bradley-Harper roughening of Cu(001)

    NARCIS (Netherlands)

    Everts, F.; Wormeester, Herbert; Poelsema, Bene


    Ion bombardment induced surface structures on Cu(001) have been studied under conditions obeying the previously “coined athermal Bradley-Harper (BH) region.” Off-normal ion impact along the ⟨110⟩ and the ⟨100⟩ azimuth at 200 K gives rise to different high-resolution low-energy electron-diffraction

  10. Design of polarized infrared athermal telephoto objective for penetrating the fog (United States)

    Gao, Duorui; Fu, Qiang; Zhao, Zhao; Zhao, Bin; Zhong, Lijun; Zhan, Juntong


    Polarized infrared imaging technology is a new detection technique which own the ability of spying through the fog, highlighting the target and recognizing the forgeries, these characters make it a good advantage of increasing the work distance in the fog. Compared to the traditional infrared imaging method, polarized infrared imaging can identify the background and target easily, that is the most distinguishing feature of polarized infrared imaging technology. Owning to the large refractive index of the infrared material, temperature change will bring defocus seriously, athermal infrared objective is necessarily. On the other hand, athermal objective has large total length, and hard to be integrated for their huge volume. However telephoto objective has the character of small volume and short total length. The paper introduce a method of polarized and athermal infrared telephoto objective which can spy the fog. First assign the optical power of the fore group and the rear group on the basis of the principle of telephoto objective, the power of the fore group is positive and the rear group is negative; then distribute the optical power within each group to realize the ability of athermalization, finally computer-aided software is used to correct aberration. In order to prove the feasibility of the scheme, an athermal optical system was designed by virtue of ZEMAX software which works at 8~12 µm, the focal length of 150mm, F number is 2, and total length of the telephoto objective is 120mm. The environment temperature analysis shows that the optical system have stable imaging quality, MTF is close to diffraction limit. This telephoto objective is available for infrared polarized imaging.

  11. Modelling and simulation of a thermally induced optical transparency in a dual micro-ring resonator (United States)

    Lydiate, Joseph


    This paper introduces the simulation and modelling of a novel dual micro-ring resonator. The geometric configuration of the resonators, and the implementation of a simulated broadband excitation source, results in the realization of optical transparencies in the combined through port output spectrum. The 130 nm silicon on insulator rib fabrication process is adopted for the simulation of the dual-ring configuration. Two titanium nitride heaters are positioned over the coupling regions of the resonators, which can be operated independently, to control the spectral position of the optical transparency. A third heater, centrally located above the dual resonator rings, can be used to red shift the entire spectrum to a required reference resonant wavelength. The free spectral range with no heater currents applied is 4.29 nm. For a simulated heater current of 7 mA (55.7 mW heater power) applied to one of the through coupling heaters, the optical transparency exhibits a red shift of 1.79 nm from the reference resonant wavelength. The ring-to-ring separation of approximately 900 nm means that it can be assumed that there is a zero ring-to-ring coupling field in this model. This novel arrangement has potential applications as a gas mass airflow sensor or a gas species identification sensor.

  12. Demonstration of lasing oscillation in a plasmonic microring resonator containing quantum dots fabricated by transfer printing (United States)

    Tamada, Akihito; Ota, Yasutomo; Kuruma, Kazuhiro; Ho, Jinfa; Watanabe, Katsuyuki; Iwamoto, Satoshi; Arakawa, Yasuhiko


    We demonstrate room-temperature lasing oscillation in a plasmonic microring resonator containing InAs/GaAs self-assembled quantum dots. The resonator is composed of a GaAs microring placed on an atomically flat silver surface. Such a structure was fabricated by transfer printing, through which we can pick the dielectric microring and place it on the silver surface at will, hence maintaining a high-quality metal surface without introducing any complex fabrication process. Our result will be important in the development of nanoscale light sources in future densely integrated plasmonic circuits.

  13. A wide-FoV athermalized infrared imaging system with a two-element lens (United States)

    Feng, Bin; Shi, Zelin; Zhao, Yaohong; Liu, Haizheng; Liu, Li


    For infrared imaging systems to achieve wide field of view (FoV), wide operating temperature and low weight, this work designs a wide-FoV athermalized infrared imaging system (AIIS) with a two-element lens. Its principle, design, manufacture, measurement and performance validation are successively discussed. The two-element lens contains four surfaces, where three aspheric surfaces are introduced to reduce optical off-axis aberrations and a cubic surface is introduced to achieve athermalization. The key coding mask containing an aspheric surface and a cubic surface is manufactured by nano-metric machining of ion implanted material (NiIM). Experimental results validate that our wide-FoV wavefront coding AIIS has a full FoV of 26.10° and an operating temperature over -20 °C to +70 °C.

  14. Silicon photonic dual-gas sensor for H2 and CO2 detection. (United States)

    Mi, Guangcan; Horvath, Cameron; Van, Vien


    We report a silicon photonic dual-gas sensor based on a wavelength-multiplexed microring resonator array for simultaneous detection of H2 and CO2 gases. The sensor uses Pd as the sensing layer for H2 gas and a novel functional material based on the Polyhexamethylene Biguanide (PHMB) polymer for CO2 gas sensing. Gas sensing experiments showed that the PHMB-functionalized microring exhibited high sensitivity to CO2 gas and excellent selectivity against H2. However, the Pd-functionalized microring was found to exhibit sensitivity to both H2 and CO2 gases, rendering it ineffective for detecting H2 in a gas mixture containing CO2. We show that the dual-gas sensing scheme can allow for accurate measurement of H2 concentration in the presence of CO2 by accounting for the cross-sensitivity of Pd to the latter.

  15. Use of microring resonators for biospecific interaction analysis (United States)

    Chalyan, Tatevik; Besselink, Geert A. J.; Heideman, Rene G.; Pavesi, Lorenzo


    Integrated optical biosensors based on Mach-Zehnder Interferometers and Microring Resonators are widely used for food/drug monitoring and protein studies thank to their high intrinsic sensitivity, easy integration and miniaturization, and low cost.1, 2 In this study, we present a system to perform antibody interaction analysis using a photonic chip made of an array of six microring resonators (MRRs) based on the TriPleX platform. A compact system is presented where the input light is provided by a Vertical Cavity Surface Emitting Laser (VCSEL) pigtailed to a single mode fiber and operating at a ≍ 850nm wavelength. The output signal is detected by PIN photodetectors placed in the optical signal read-out module (the so-called OSROM) and processed by an easy-to-use Fourier Transform algorithm. Bulk sensitivity (Sb=98+/-2.1 nm/RIU) and Limit of Detection (LOD=(7.5+/- 0.5) x10-6 RIU) are measured and appeared to be very similar for the six MRRs on the same chip,3 which is an important property for multianalyte detection. An analysis of the anti-biotin interaction with immobilized biotin is performed by using different concentrations of anti-biotin antibody. The dependence of the resonance wavelength shift from the antibody concentration, as well as the association and the dissociation rate constants are calculated. For the average dissociation constant (KD) of anti-biotin antibody toward immobilized biotin, a value of (1.9+/-0.5) x10-7M is estimated, which is of the same order of magnitude of other published data.4 Furthermore, the specificity of the interaction is confirmed by using negative control antibodies and by performing competition with free, i.e., dissolved, biotin. In addition, the functional surface of the sensors could be regenerated for repeated measurements up to eight times by using 10 mM glycine/HCl pH 1.5.

  16. Athermalization in atomic force microscope based force spectroscopy using matched microstructure coupling. (United States)

    Torun, H; Finkler, O; Degertekin, F L


    The authors describe a method for athermalization in atomic force microscope (AFM) based force spectroscopy applications using microstructures that thermomechanically match the AFM probes. The method uses a setup where the AFM probe is coupled with the matched structure and the displacements of both structures are read out simultaneously. The matched structure displaces with the AFM probe as temperature changes, thus the force applied to the sample can be kept constant without the need for a separate feedback loop for thermal drift compensation, and the differential signal can be used to cancel the shift in zero-force level of the AFM.

  17. Micro-ring sensor used in the diagnosis of gastric cancer (United States)

    Shi, Sichao; Cheng, Qing; Lin, Rong; Su, Da; Huang, Ying


    To find a detecting method that can be applied to the clinical screening and diagnosis, the cascaded micro-ring sensor with Vernier effect was used to distinguish gastric cancerous and normal cells. The simulation by FDTD of the cascaded microring sensor with different refractive indexes of the analyte (normal cells and gastric cancer cells) will be presented. In the simulation, with the refractive index's change Δn=0.02 for the two different analyte, the shift of sensor's resonant wavelength is 6.71nm. And the cascaded micro-ring sensor's sensitivity S is 335.5nm/RIU, and it is much larger compared to 19nm/RIU for a single ring sensor.

  18. Development of highly compact and low power consumption athermal military laser designators (United States)

    Sijan, A.


    The utility of military lasers, particularly in the area of laser designation for laser-guided weapons, is well understood. Laser systems based on Nd:YAG have been fielded since the 1980's and over the last three decades have introduced incremental technology steps to improve performance and weight. The most recent technology step has been the introduction of athermal lasers based on laser-diode pumping of Nd:YAG and products are now emerging for use on the battlefield. The technical performance, efficiency, size, weight and power for these lasers, has been key to driving the new production designs. In this paper, we review the development of the laser designs and their introduction since the advent of laser designation. In particular, we compare the relative performance and characteristics over the evolution of fielded laser designators. Moreover, we will review the key building blocks for the design of athermal lasers and describe some critical design issues for engineering and productionisation of a military laser system, including removal of thermal lensing, novel diode-pumping schemes and robustness over the environment. These will be exemplified using results from the development of the SELEX Galileo Type 163 Laser Target Designators. These will cover not only technical performance, power and efficiency, but also thermal management, mass, volume, cost and overall complexity for manufacture.

  19. Integrated polymer micro-ring resonators for optical sensing applications (United States)

    Girault, Pauline; Lorrain, Nathalie; Poffo, Luiz; Guendouz, Mohammed; Lemaitre, Jonathan; Carré, Christiane; Gadonna, Michel; Bosc, Dominique; Vignaud, Guillaume


    Micro-resonators (MR) have become a key element for integrated optical sensors due to their integration capability and their easy fabrication with low cost polymer materials. Nowadays, there is a growing need on MRs as highly sensitive and selective functions especially in the areas of food and health. The context of this work is to implement and study integrated micro-ring resonators devoted to sensing applications. They are fabricated by processing SU8 polymer as core layer and PMATRIFE polymer as lower cladding layer. The refractive index of the polymers and of the waveguide structure as a function of the wavelength is presented. Using these results, a theoretical study of the coupling between ring and straight waveguides has been undertaken in order to define the MR design. Sub-micronic gaps of 0.5 μm to 1 μm between the ring and the straight waveguides have been successfully achieved with UV (i-lines) photolithography. Different superstrates such as air, water, and aqueous solutions with glucose at different concentrations have been studied. First results show a good normalized transmission contrast of 0.98, a resonator quality factor around 1.5 × 104 corresponding to a coupling ratio of 14.7%, and ring propagation losses around 5 dB/cm. Preliminary sensing experiments have been performed for different concentrations of glucose; a sensitivity of 115 ± 8 nm/RIU at 1550 nm has been obtained with this couple of polymers.

  20. Signal Quality Enhancement of Directly- Modulated VCSELs Using a Micro-Ring Resonator Transfer Function

    DEFF Research Database (Denmark)

    An, Yi; Muller, M.; Estaran Tolosa, Jose Manuel


    A micro-ring resonator transfer function is used to enhance the quality of signals generated using directly modulated VCSELs. The scheme is demonstrated up to 25 Gbit/s with a 17.6-GHz VCSEL, with up to 10 dB sensitivity improvement.......A micro-ring resonator transfer function is used to enhance the quality of signals generated using directly modulated VCSELs. The scheme is demonstrated up to 25 Gbit/s with a 17.6-GHz VCSEL, with up to 10 dB sensitivity improvement....

  1. Low insertion loss SOI microring resonator integrated with nano-taper couplers

    DEFF Research Database (Denmark)

    Pu, Minhao; Frandsen, Lars Hagedorn; Ou, Haiyan


    We demonstrate a microring resonator working at TM mode integrated with nano-taper couplers with 3.6dB total insertion loss. The measured insertion loss of the nano-taper coupler was only 1.3dB for TM mode.......We demonstrate a microring resonator working at TM mode integrated with nano-taper couplers with 3.6dB total insertion loss. The measured insertion loss of the nano-taper coupler was only 1.3dB for TM mode....

  2. Hybrid transistor manipulation controlled by light within a PANDA microring resonator. (United States)

    Chantanetra, Soontorn; Teeka, Chat; Mitatha, Somsak; Jomtarak, Rangsan; Yupapin, Preecha P


    In this paper, the novel type of transistor known as a hybrid transistor is proposed, in which all types of transistors can be formed by using a microring resonator called a PANDA microring resonator. In principle, such a transistor can be used to form for various transistor types by using the atom/molecule trapping tools, which is named by an optical tweezer, where in application all type of transistors, especially, molecule and photon transistors can be performed by using the trapping tools, which will be described in details.

  3. Nonconcentric triple-microring resonator for label-free on-chip sensing with high figure-of-merit (United States)

    Hui, Zhanqiang; Zhang, Youkun; Yang, Min; Wei, Shixiu; Zhang, Meizhi; He, Fengtao


    A nonconcentric triple-microring resonator employing a silicon-on-insulator platform is proposed and analyzed for label-free sensing applications. The numerical simulations are carried out based on the finite-difference time-domain with perfectly matched layer boundary condition and transmission matrix methods. Its physical aspects and specific applications are highlighted. The results show that, in the optimized structure, a Q factor of 3.06×109 is achieved under weak coupling conditions. It is 3 orders of magnitude larger than that of a dual-ring resonator and 6 orders of magnitude larger than that of a single-ring resonator with lossless waveguide. In addition, to validate the proposed scheme, the designed ring resonator-based photonic sensor achieves refractive index sensing with resonance wavelength sensitivity of 101 nm/refractive index unit (RIU) and figure-of-merit of 11,211 RIU-1. Correspondingly, the detection limit of refractive index variation will be improved significantly compared with those of nonconcentric single-/dual-ring resonator and concentric triple-ring resonator. It is very useful for label-free on-chip biochemical sensing.

  4. Waveguide-integrated telecom-wavelength photodiode in deposited silicon. (United States)

    Preston, Kyle; Lee, Yoon Ho Daniel; Zhang, Mian; Lipson, Michal


    We demonstrate photodiodes in deposited polycrystalline silicon at 1550 nm wavelength with 0.15 A/W responsivity, 40 nA dark current, and gigahertz time response. Subband absorption is mediated by defects that are naturally present in the polycrystalline material structure. The material exhibits a moderate absorption coefficient of 6 dB/cm, which allows the same microring resonator device to act as both a demultiplexing filter and a photodetector. We discuss the use of deposited silicon-based complementary metal-oxide semiconductor materials for nanophotonic interconnects.

  5. Resonance-enhanced waveguide-coupled silicon-germanium detector

    CERN Document Server

    Alloatti, Luca


    A photodiode with 0.55$\\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.

  6. Silicon photonic integrated devices for datacenter optical networks (United States)

    Fiorentino, Marco; Chen, Chin-Hui; Kurczveil, Géza; Liang, Di; Peng, Zhen; Beausoleil, Raymond


    The evolution of computing infrastructure and workloads has put an enormous pressure on datacenter networks. It is expected that bandwidth will scale without increases in the network power envelope and total cost of ownership. Networks based on silicon photonic devices promise to help alleviate these problems, but a viable development path for these technologies is not yet fully outlined. In this paper, we report our progress on developing components and strategies for datacenter silicon photonics networks. We will focus on recent progress on compact, low-threshold hybrid Si lasers and the CWDM transceivers based on these lasers as well as DWDM microring resonator-based transceivers.

  7. Direct laser writing of polymer micro-ring resonator ultrasonic sensors (United States)

    Wei, Heming; Krishnaswamy, Sridhar


    With the development of photoacoustic technology in recent years, ultrasound-related sensors play a vital role in a number of areas ranging from scientific research to nondestructive testing. Compared with the traditional PZT transducer as ultrasonic sensors, novel ultrasonic sensors based on optical methods such as micro-ring resonators have gained increasing attention. The total internal reflection of the light along the cavity results in light propagating in microcavities as whispering gallery modes (WGMs), which are extremely sensitive to change in the radius and refractive index of the cavity induced by ultrasound strain field. In this work, we present a polymer optical micro-ring resonator based ultrasonic sensor fabricated by direct laser writing optical lithography. The design consists of a single micro-ring and a straight tapered waveguide that can be directly coupled by single mode fibers (SMFs). The design and fabrication of the printed polymer resonator have been optimized to provide broad bandwidth and high optical quality factor to ensure high detection sensitivity. The experiments demonstrate the potential of the polymer micro-ring resonator to works as a high-performance ultrasonic sensor.

  8. Simulation and Analysis of a Metamaterial Sensor Based on a Microring Resonator (United States)

    Huang, Ming; Yang, Jingjing; Jun, Sun; Mu, Shujuan; Lan, Yaozhong


    Metamaterials are artificial media structured on a size scale smaller than the wavelength of external stimuli, that may provide novel tools to significantly enhance the sensitivity and resolution of the sensors. In this paper, we derive the dispersion relation of hollow cylindrical dielectric waveguide, and compute the resonant frequencies and Q factors of the corresponding Whispering-Gallery-Modes (WGM). A metamaterial sensor based on microring resonator operating in WGM is proposed, and the resonance intensity spectrum curves in the frequency range from 185 to 212 THz were studied under different sensing conditions. Full-wave simulations, considering the frequency shift sensitivity influenced by the change of core media permittivity, the thickness and permittivity of the adsorbed substance, prove that the sensitivity of the metamaterial sensor is more than 7 times that of the traditional microring resonator sensor, and the metamaterial layer loaded in the inner side of the microring doesn’t affect the high Q performance of the microring resonator. PMID:22163933

  9. Single-photon all-optical switching using coupled microring resonators

    Indian Academy of Sciences (India)

    switching characteristics of the MZI can be exponentially enhanced as a function of the number of microring ... for detecting biological pathogens sensitively [11] and for manipulating the speed of light propagation [12,13]. ... the single-pass field transmission and linear phase shift in the ring, respectively. α1 is the intensity ...

  10. Athermal domain-wall creep near a ferroelectric quantum critical point. (United States)

    Kagawa, Fumitaka; Minami, Nao; Horiuchi, Sachio; Tokura, Yoshinori


    Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under realistic electric-field magnitudes. Here we show that such frozen ferroelectric domain walls recover their mobility under the influence of quantum fluctuations. Nonlinear permittivity and polarization-retention measurements of an organic charge-transfer complex reveal that ferroelectric domain-wall creep occurs via an athermal process when the system is tuned close to a pressure-driven ferroelectric quantum critical point. Despite the heavy masses of material building blocks such as molecules, the estimated effective mass of the domain wall is comparable to the proton mass, indicating the realization of a ferroelectric domain wall with a quantum-particle nature near the quantum critical point.

  11. Wavelength locking of silicon photonics multiplexer for DML-based WDM transmitter


    Grillanda, Stefano; Ji, Ruiqiang; Morichetti, Francesco; Carminati, Marco; Ferrari, Giorgio; Guglielmi, Emanuele; Peserico, Nicola; Annoni, Andrea; Dede, Alberto; Nicolato, Danilo; Vannucci, Antonello; Klitis, Charalambos; Holmes, Barry; Sorel, Marc; Fu, Shengmeng


    We present a wavelength locking platform enabling the feedback control of silicon (Si) microring resonators (MRRs) for the realization of a 4 × 10 Gb/s wavelength-division-multiplexing (WDM) transmitter. Four thermally tunable Si MRRs are employed to multiplex the signals generated by four directly modulated lasers (DMLs) operating in the L-band, as well as to improve the quality of the DMLs signals. Feedback control is achieved through a field-programmable gate array controller by monitoring...

  12. Improved technique for the characterization of micro-ring resonator using low coherence measurement. (United States)

    Liu, Wei Kang; Chen, Chun Yen; Wei, Chia-Chien; Chen, Yung Jui


    Low-coherence interferometric measurement has been used to investigate optical waveguide devices with high accuracy. By utilizing an incoherent light source, one can generate separate interferogram features for each optical path. The distance between adjacent features of a ring resonator is related to ring length. With small ring radius, the interferogram spectrum exhibits severe cross-interference between adjacent features that hinders one to analyze the optical path individually. We propose a novel technique to overcome the light-source bandwidth limitation by signal-processing technique, which allows one to characterize small radius micro-ring resonator. This technique has been applied to both numerical simulations and experimental data with significant improvement of the extracted ring parameters. The improvements allow one to better understand the wavelength dependency properties of small radius micro-ring resonators.

  13. Photon-pair generation in a lossy microring resonator. I. Theory (United States)

    Alsing, Paul M.; Hach, Edwin E.


    We investigate entangled photon-pair generation in a lossy microring resonator using an input-output formalism based on the work of M. G. Raymer and C. J. McKinstrie [Phys. Rev. A 88, 043819 (2013), 10.1103/PhysRevA.88.043819] and P. M. Alsing et al. [Phys. Rev. A 95, 053828 (2017), 10.1103/PhysRevA.95.053828] that incorporates circulation factors that account for the multiple round-trips of the fields within the cavity. We consider the nonlinear processes of spontaneous parametric down-conversion and spontaneous four-wave mixing, and we compute the generated biphoton signal-idler state from a single-bus microring resonator, along with the generation, coincidence-to-accidental, and heralding efficiency rates. We compare these generalized results to those obtained by previous works employing the standard Langevin input-output formalism.

  14. [Study of spectrum characteristic of humidity sensor based on series coupled two micro-ring resonators]. (United States)

    Guo, Shi-Liang; Hu, Chun-Hai; Li, Xin; Wang, Wen-Juan


    A novel humidity sensor of polyimide (PI) based on the series coupled two-micro-ring resonators is proposed in the present paper. The transfer function of the micro ring resonator was calculated by using the transfer matrix method and the coupled mode theory. The authors compared the output spectrum characteristics of the traditional single micro-ring and series coupled two-micro-ring with different radii. The refractive index of the PI waveguide changes with different environmental humidity and this will lead to the drift of the output spectrum of the micro-ring resonator. By detecting the drift of the output spectrum we can measure the humidity, and the sensitivity and the sensing-range of the sensor are acquired accordingly. We also analyzed the output spectrum characteristics of resonators at different humidity sensing part. The theoretical results show the good performance of humidity sensor which could be used as the optimum sensing unit when the whole structure of the series coupled two-micro-ring resonators serves as the sensing part. The sensing-range and sensitivity of the system are improved by series micro-ring resonators of different radii compared to the conventional sensor with single micro-ring resonator. The free spectral range (FSR) of resonator reaches to 0.15 μm, the sensing-range is 10% RH-80% RH, and the sensitivity is 0.001 7 μm (% RH)(-1). Series coupled two-micro-ring with different radii gives theoretical instruction for producing integrated humidity sensor with low-cost, simple structure and high sensitivity.

  15. Photoacoustic probe using a microring resonator ultrasonic sensor for endoscopic applications. (United States)

    Dong, Biqin; Chen, Siyu; Zhang, Zhen; Sun, Cheng; Zhang, Hao F


    We designed an all-optical photoacoustic (PA) probe for endoscopic applications by employing an optically transparent, coverslip-type, polymeric microring resonator ultrasonic sensor. We experimentally quantified the axial, tangential, and radial resolutions and angular sensitive stability of this probe. Using this probe, we achieved volumetric imaging of several phantoms. Our all-optical probe design offers clear benefit in integrating PA endoscope with other optical endoscopic imaging modalities to facilitate the transformation from bench to bedside.

  16. Label-free, single-object sensing with a microring resonator: FDTD simulation. (United States)

    Nguyen, Dan T; Norwood, Robert A


    Label-free, single-object sensing with a microring resonator is investigated numerically using the finite difference time-domain (FDTD) method. A pulse with ultra-wide bandwidth that spans over several resonant modes of the ring and of the sensing object is used for simulation, enabling a single-shot simulation of the microring sensing. The FDTD simulation not only can describe the circulation of the light in a whispering-gallery-mode (WGM) microring and multiple interactions between the light and the sensing object, but also other important factors of the sensing system, such as scattering and radiation losses. The FDTD results show that the simulation can yield a resonant shift of the WGM cavity modes. Furthermore, it can also extract eigenmodes of the sensing object, and therefore information from deep inside the object. The simulation method is not only suitable for a single object (single molecule, nano-, micro-scale particle) but can be extended to the problem of multiple objects as well.

  17. Fabrication of porous microrings via laser printing and ion-beam post-etching (United States)

    Syubaev, S.; Nepomnyashchiy, A.; Mitsai, E.; Pustovalov, E.; Vitrik, O.; Kudryashov, S.; Kuchmizhak, A.


    Pulsed-laser dry printing of noble-metal microrings with a tunable internal porous structure, which can be revealed via an ion-beam etching post-procedure, was demonstrated. The abundance and average size of the pores inside the microrings were shown to be tuned in a wide range by varying the incident pulse energy and a nitrogen doping level controlled in the process of magnetron deposition of the gold film in the appropriate gaseous environment. The fabricated porous microrings were shown to provide many-fold near-field enhancement of incident electromagnetic fields, which was confirmed by mapping of the characteristic Raman band of a nanometer-thick covering layer of Rhodamine 6G dye molecules and supporting finite-difference time-domain calculations. The proposed laser-printing/ion-beam etching approach is demonstrated to be a unique tool aimed at designing and fabricating multifunctional plasmonic structures and metasurfaces for spectroscopic bioidentification based on surface-enhanced infrared absorption, Raman scattering, and photoluminescence detection schemes.

  18. On-chip, high-sensitivity temperature sensors based on dye-doped solid-state polymer microring lasers (United States)

    Wan, Lei; Chandrahalim, Hengky; Chen, Cong; Chen, Qiushu; Mei, Ting; Oki, Yuji; Nishimura, Naoya; Guo, L. Jay; Fan, Xudong


    We developed a chip-scale temperature sensor with a high sensitivity of 228.6 pm/°C based on a rhodamine 6G (R6G)-doped SU-8 whispering gallery mode microring laser. The optical mode was largely distributed in a polymer core layer with a 30 μm height that provided detection sensitivity, and the chemically robust fused-silica microring resonator host platform guaranteed its versatility for investigating different functional polymer materials with different refractive indices. As a proof of concept, a dye-doped hyperbranched polymer (TZ-001) microring laser-based temperature sensor was simultaneously developed on the same host wafer and characterized using a free-space optics measurement setup. Compared to TZ-001, the SU-8 polymer microring laser had a lower lasing threshold and a better photostability. The R6G-doped SU-8 polymer microring laser demonstrated greater adaptability as a high-performance temperature-sensing element. In addition to the sensitivity, the temperature resolutions for the laser-based sensors were also estimated to be 0.13 °C and 0.35 °C, respectively. The rapid and simple implementation of micrometer-sized temperature sensors that operate in the range of 31 - 43 °C enables their potential application in thermometry.

  19. In-situ study of athermal reversible photocrystallization in a chalcogenide glass (United States)

    Benekou, Vasiliki; Strizik, Lukas; Wagner, Tomas; Yannopoulos, Spyros N.; Greer, A. Lindsay; Orava, Jiri


    The time-resolved Raman measurements reveal a three-stage mechanism of the photostructural changes in Ge25.0Ga9.5Sb0.5S65.0 (containing 0.5 at. % of Er3+) glass under continuous-above-bandgap illumination. These changes are reversible and effectively athermal, in that the local temperature rises to about 60% of the glass-transition temperature and the phase transitions take place in the glass/crystal and not in an equilibrium liquid. In the early stages of illumination, the glassy-network dimensionality changes from a predominantly 3-D to a mixture of 2-D/1-D represented by an increase in the fraction of edge-sharing tetrahedra and the emergence of homonuclear (semi)metallic bonds. This incubation period of the structural rearrangements, weakly thermally activated with an energy of ˜0.16 eV, facilitates a reversible photocrystallization. The photocrystallization rate in the glass is comparable to that achieved by thermal crystallization from supercooled liquid at large supercooling. Almost complete re-amorphization can be achieved in about an hour by reducing the incident laser-power density by a factor of ten. Glass-ceramic composites—with varying glass-to-crystal fraction—can be obtained by ceasing the illumination during re-amorphization. Microstructural imaging reveals photoinduced mass transport and the formation of columnar-porous structures. This shows the potential for a bond-specific engineering of glassy structures for photonic applications with a spatial resolution unachievable by thermal annealing.

  20. [A Surface Plasmon Micro-Ring Sensor Suitable for Humidity Sensing]. (United States)

    Li, Zhi-quan; An, Dong-yang; Zhang, Xin; Zhao, Ling-ling; Sha, Xiao-peng; Guo, Shi-liang; Li, Wen-chao


    Temperature is a very important parameter in scientific research, production and life. Almost all the properties of materials are related to temperature. The precise measurement of the temperature is a very important task, so the temperature sensor is widely used as a core part in the temperature measuring instrument. A novel surface plasmon micro-ring sensor suitable for humidity sensing is presented in this paper. The sensor uses a multi-layered surface plasmon waveguide structure and choosing Polyimide (Polyimide, PI) as the moisture material. We get the transfer function of surface plasmon micro-ring sensor by using transfer matrix method. Refractive indexes of Polyimide and the multilayer waveguide structure change as environment relative humidity changes, thus leading to an obvious peak drift of output spectrum. The paper mainly discusses the influence of the changes of the refractive index of humidity-sensing parts on the output spectrum, and the transmission characteristics of multilayer waveguide structure. Through the finite element method and the theoretical simulation of Matlab, We can draw: When the length between the two coupling points of the U-shaped waveguide is an integer multiple of circumference of the micro-ring, an obvious drift in the horizontal direction appears, the free spectral range (FSR) doubled and the sensitivity is 0.0005 μm/%RH; When the external environment relative humidity RH changes from 10% to 100% RH, scatter is change between including (including 0.005 m to 0.005 m, compared to other humidity sensor, the Sensitivity of sensor improves 10~50 times and the transmission is very stable. Results show that the design of surface plasma micro ring sensors has better sensitivity, stable performance and can be used in the humidity measurement, achieving a high sensitivity in the sense of humidity when the wide range of filter frequency selection is taken into account, and providing a theoretical basis for the preparation of micro-optics.

  1. Transport properties of photonic topological insulators based on microring resonator array

    CERN Document Server

    Jiang, Xiaohui; Yin, Chenxuan; Zhang, Yanfeng; Chen, Hui; Yu, Siyuan


    An array of ring resonators specifically designed can perform as a topological insulator. We conduct simulations using both Tight-Binding Model (TBM) and Transfer Matrix Method (TMM) to analyze the transport properties of such optical structure, verifying the presence of robust topological edge states which is immune to disorder and defect. We have also made a comparison between these two methods, of which results suggesting that TBM is only applicable under weakly-coupling condition while TMM is more rigorous. Finally we compared the structure with common microring array and coupled resonator optical waveguide (CROW) to demonstrate that it has desired transmission properties with wide and flat spectral response.

  2. Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities (United States)

    Azzini, Stefano; Grassani, Davide; Galli, Matteo; Gerace, Dario; Patrini, Maddalena; Liscidini, Marco; Velha, Philippe; Bajoni, Daniele


    We report on four-wave mixing in coupled photonic crystal nano-cavities on a silicon-on-insulator platform. Three photonic wire cavities are side-coupled to obtain three modes equally separated in energy. The structure is designed to be self-filtering, and we show that the pump is rejected by almost two orders of magnitude. We study both the stimulated and the spontaneous four-wave mixing processes: owing to the small modal volume, we find that signal and idler photons are generated with a hundred-fold increase in efficiency as compared to silicon micro-ring resonators.

  3. Freestanding membrane composed of micro-ring array with ultrahigh sidewall aspect ratio for application in lightweight cathode arrays

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lanlan [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Liu, Hongzhong, E-mail: [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Jiang, Weitao, E-mail: [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Gao, Wei [Key Laboratory of Mechanics on Western Disasters and Environment, Lanzhou University, Lanzhou 730000 (China); Chen, Bangdao [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Li, Xin [Department of Microelectronics, Xi’an Jiaotong University, Xi’an 710049 (China); Ding, Yucheng [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); An, Ningli [Department of Packaging Engineering, Xi’an University of Technology, Xi’an 710048 (China)


    Graphical abstract: A freestanding multilayer ultrathin nano-membrane (FUN-membrane) with a micro-ring array (MRA), in which the dimension of each micro-ring is 3 μm in diameter, 2 μm in height and sub-100 nm in sidewall thickness is successfully fabricated, as shown in the SEM image of figure (a). Due to the MRA with ultrahigh aspect ratio of dielectric-metal sidewall, the FUN-membrane can be transferred to either rigid or flexible substrate to be used as the cathode for lightweight display panel, as shown in the schematic of figure (b). - Highlights: • Exploring a new fabrication method for the freestanding ultrathin nano-membrane (FUN-membrane). • FUN-membrane is composed of micro-ring array with ultrahigh aspect ratio of the insulator-metal sidewall. • The sharp metal edge of each micro-ring is preferred to be served as the micro-emitter. - Abstract: A freestanding multilayer ultrathin nano-membrane (FUN-membrane) with a micro-ring array (MRA) is successfully fabricated through the controllable film deposition. Each micro-ring of FUN-membrane is 3 μm in diameter, 2 μm in height and sub-100 nm in sidewall thickness, demonstrating an ultrahigh sidewall aspect ratio of 20:1. In our strategy, a silica layer (200 nm in thickness), a chromium transition layer (5 nm-thick) and a gold layer (40 nm-thick), were in sequence deposited on patterned photoresist. After removal of the photoresist by lift-off process, a FUN-membrane with MRA was peeled off from the substrate, where the gold layer acted as a protecting layer to prevent the MRA from fracture. The FUN-membrane was then transferred to a flexible polycarbonate (PC) sheet coated with indium tin oxide (ITO) layer, which was then used as a flexible and lightweight cathode. Remarkably, the field emission effect of the fabricated FUN-membrane cathode performs a high field-enhancement factor of 1.2 × 10{sup 4} and a low turn-on voltage of 2 V/μm, indicating the advantages of the sharp metal edge of MRA. Due

  4. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range. (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther


    The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

  5. III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther


    The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III–V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III–V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy. PMID:28777291

  6. Design and performance analysis of optical microring resonator based J-K flip-flop (United States)

    Verma, Nidhi; Mandal, Sanjoy


    A simple design of optically pumped J-K flip-flop using a two GaAs-AlGaAs based optical microring resonator (OMRR) is introduced. The nonlinear property of a GaAs-AlGaAs based ring resonator is explored to use it as an optical switch. A high-intensity optical pump pulse is used for the switching operation of the OMRR. A theoretical model of the proposed J-K flip-flop circuit is developed by applying the delay line signal process approach. Z-domain model of the circuit is explored to analyze its performance. Various performance parameters-such as contrast ratio (CR), extinction ratio (ER), on-off ratio (T), and amplitude modulation (AM)-are determined from the simulation results obtained on MATLAB. The optimum values of CR, ER, T, and AM are calculated for the proposed model, which confirms the feasibility of the flip-flop.

  7. Theoretical analysis of microring resonator-based biosensor with high resolution and free of temperature influence (United States)

    Jian, Aoqun; Zou, Lu; Tang, Haiquan; Duan, Qianqian; Ji, Jianlong; Zhang, Qianwu; Zhang, Xuming; Sang, Shengbo


    The issue of thermal effects is inevitable for the ultrahigh refractive index (RI) measurement. A biosensor with parallel-coupled dual-microring resonator configuration is proposed to achieve high resolution and free thermal effects measurement. Based on the coupled-resonator-induced transparency effect, the design and principle of the biosensor are introduced in detail, and the performance of the sensor is deduced by simulations. Compared to the biosensor based on a single-ring configuration, the designed biosensor has a 10-fold increased Q value according to the simulation results, thus the sensor is expected to achieve a particularly high resolution. In addition, the output signal of the mathematical model of the proposed sensor can eliminate the thermal influence by adopting an algorithm. This work is expected to have great application potentials in the areas of high-resolution RI measurement, such as biomedical discoveries, virus screening, and drinking water safety.

  8. A decade of progress in microring and microdisk based photonic circuits: a personal selection (United States)

    Schwelb, Otto


    Optical resonators have micrometer size dimensions and come mostly in two flavors, namely circular and racetrack shaped microrings (MR), and microdisks (MD), although microsphere (MS) and photonic crystal microring (PCMR) resonators are also expected to gain prominence. Highly advanced fabrication techniques in recent years resulted in the reduction of propagation losses and in a remarkable increase of resonator Q factor and finesse. Newly developed microresonators are therefore ideally suited for applications in highly selective communication filters, delay lines, distributed and localized sensing, industrial measurements, microlaser mirrors and high-resolution spectroscopy. Since the optical signal recirculates and spends a relatively long time trapped in a high Q cavity, microresonators enhance light-light and light-particle interactions and are for this reason most promising to exploit nonlinear effects. The talk will focus on advances in multiring photonic devices such as the coupled resonator optical waveguide (CROW) and the side-coupled integrated space sequenced optical resonator (SCISSOR), on the link between photonic and microwave filter design, on the effect of polarization on filter response and its control, on schemes and efficiency of tuning and modulation and on MR composites used as reflectors and laser mirrors. The talk will also cover issues related to design trends and technological advances, such as vertically stacked MRs, coiled optical resonators and resonators not based on propagating waves, as well as techniques to extend the free spectral range (FSR) of periodic filters through the Vernier principle and the use of polymer materials and two-dimensional photonic crystals to fabricate optical resonators.

  9. Noninvasive monitoring and control in silicon photonics (United States)

    Annoni, Andrea; Oliveira De Aguiar, Douglas; Melloni, Andrea; Guglielmi, Emanuele; Carminati, Marco; Ferrari, Giorgio; Buchheit, Annika; Wiemhöfer, Hans-Dieter; Muñoz-Castro, Marina; Klitis, Charalambos; Sorel, Marc; Morichetti, Francesco


    Advanced technologies to implement on-chip monitoring and feedback control operations are required to make silicon photonics scale to large-scale-of-integration. Transparent detectors and energy saving actuators are key ingredients of this paradigm. On-chip detectors are required to be minimally invasive in order to allow their integration in key spots of the circuit, thus easing control operation through the partitioning of complex architectures in smaller cluster of devices and the realization of local feedback control loops. Non volatile integrated actuators, which are reversible switching devices that can maintain the state without the need of "always on" power dissipation, are also needed to reduce the power consumption required by tuning, reconfiguration and stabilization operations. Addressing these issues, in this contribution we report on the performance of a recently developed transparent detector, named ContacLess Integrated Photonic Probe (CLIPP), that can monitor in line the intensity of the light in silicon waveguides without introducing any photon absorption in excess to the waveguide propagation loss. A systematic characterization of the CLIPP detector is here presented, specifically addressing the dependence of the CLIPP performance on the waveguide geometry and on the polarization and wavelength of the light. Concerning the development of non-volatile integrated actuators, we demonstrate the possibility to manipulate the light transmission in silicon waveguides by electrochemical insertion of mobile ions in a mixed ionic and electronic conductor (MIEC) used as upper cladding of a silicon waveguide. A finely controllable and reversible change of the imaginary part of the refractive index of the MIEC film is exploited to trim the loss of a silicon waveguide and to modify the frequency response of a silicon microring resonator.

  10. Low-loss high-confinement waveguides and microring resonators in AlGaAs-on-insulator

    DEFF Research Database (Denmark)

    Ottaviano, Luisa; Pu, Minhao; Semenova, Elizaveta


    microring resonators. Here, we report a process tomake high-quality AlGaAs-on-insulator (AlGaAsOI) waferswhere high confinement waveguides can be realized. Using optimized patterning processes, we fabricated AlGaAsOI waveguides with propagation losses as low as 1 dB/cmand microring resonators with quality......AlGaAs is a promising material for integrated nonlinearphotonics due to its intrinsic high nonlinearity. However,the challenging fabrication of deep etched AlGaAs devices makes it difficult to realize high-performance devices such as low-loss dispersion engineered waveguides and high quality...... factors up to 350,000 at telecom wavelengths. Our demonstration opens new prospects for AlGaAs devices in integrated nonlinear photonics....

  11. An actively controlled silicon ring resonator with a fully tunable Fano resonance (United States)

    Li, A.; Bogaerts, W.


    We demonstrate a novel way to generate Fano resonance with tunable wavelength, extinction ratio, and slope rate. The device is a silicon add-drop microring with two integrated tunable reflectors inside, which form an embedded Fabry-Perot cavity. The fabrication is executed at a commercial CMOS foundry. Fano resonance at the drop port is generated from the interference between the Fabry-Perot cavity mode and the ring resonance mode. By tuning the reflectivities of these two reflectors with integrated heaters, various Fano resonance shapes can be achieved with a maximum extinction ratio over 40 dB and a slope rate more than 700 dB/nm.

  12. Shape effects on time-scale divergence at athermal jamming transition of frictionless non-spherical particles (United States)

    Yuan, Ye; Jin, Weiwei; Liu, Lufeng; Li, Shuixiang


    The critical behaviors of a granular system at the jamming transition have been extensively studied from both mechanical and thermodynamic perspectives. In this work, we numerically investigate the jamming behaviors of a variety of frictionless non-spherical particles, including spherocylinder, ellipsoid, spherotetrahedron and spherocube. In particular, for a given particle shape, a series of random configurations at different fixed densities are generated and relaxed to minimize interparticle overlaps using the relaxation algorithm. We find that as the jamming point (i.e., point J) is approached, the number of iteration steps (defined as the ;time-scale; for our systems) required to completely relax the interparticle overlaps exhibits a clear power-law divergence. The dependence of the detailed mathematical form of the power-law divergence on particle shapes is systematically investigated and elucidated, which suggests that the shape effects can be generally categorized as elongation and roundness. Importantly, we show the jamming transition density can be accurately determined from the analysis of time-scale divergence for different non-spherical shapes, and the obtained values agree very well with corresponding ones reported in literature. Moreover, we study the plastic behaviors of over-jammed packings of different particles under a compression-expansion procedure and find that the jamming of ellipsoid is much more robust than other non-spherical particles. This work offers an alternative approximate procedure besides conventional packing algorithms for studying athermal jamming transition in granular system of frictionless non-spherical particles.

  13. Calculation of light delay for coupled microrings by FDTD technique and Padé approximation. (United States)

    Huang, Yong-Zhen; Yang, Yue-De


    The Padé approximation with Baker's algorithm is compared with the least-squares Prony method and the generalized pencil-of-functions (GPOF) method for calculating mode frequencies and mode Q factors for coupled optical microdisks by FDTD technique. Comparisons of intensity spectra and the corresponding mode frequencies and Q factors show that the Padé approximation can yield more stable results than the Prony and the GPOF methods, especially the intensity spectrum. The results of the Prony method and the GPOF method are greatly influenced by the selected number of resonant modes, which need to be optimized during the data processing, in addition to the length of the time response signal. Furthermore, the Padé approximation is applied to calculate light delay for embedded microring resonators from complex transmission spectra obtained by the Padé approximation from a FDTD output. The Prony and the GPOF methods cannot be applied to calculate the transmission spectra, because the transmission signal obtained by the FDTD simulation cannot be expressed as a sum of damped complex exponentials.

  14. Experimental demonstration of an optical Feynman gate for reversible logic operation using silicon micro-ring resonators

    National Research Council Canada - National Science Library

    Yonghui Tian; Zilong Liu; Tonghe Ying; Huifu Xiao; Yinghao Meng; Lin Deng; Yongpeng Zhao; Anqi Guo; Miaomiao Liao; Guipeng Liu; Jianhong Yang


    Currently, the reversible logic circuit is a popular research topic in the field of information processing as it is a most effective approach to minimize power consumption, which can achieve the one...

  15. Advanced Silicon Photonic Device Architectures for Optical Communications: Proposals and Demonstrations (United States)

    Sacher, Wesley David

    Photonic integrated circuits implemented on silicon (Si) hold the potential for densely integrated electro-optic and passive devices manufactured by the high-volume fabrication and sophisticated assembly processes used for complementary metal-oxide-semiconductor (CMOS) electronics. However, high index contrast Si photonics has a number of functional limitations. In this thesis, several devices are proposed, designed, and experimentally demonstrated to overcome challenges in the areas of resonant modulation, waveguide loss, fiber-to-chip coupling, and polarization control. The devices were fabricated using foundry services at IBM and A*STAR Institute of Microelectronics (IME). First, we describe coupling modulated microrings, in which the coupler between a microring and the bus waveguide is modulated. The device circumvents the modulation bandwidth vs. resonator linewidth trade-off of conventional intracavity modulated microrings. We demonstrate a Si coupling modulated microring with a small-signal modulation response free of the parasitic resonator linewidth limitations at frequencies up to about 6x the linewidth. Comparisons of eye diagrams show that coupling modulation achieved data rates > 2x the rate attainable with intracavity modulation. Second, we demonstrate a silicon nitride (Si3N4)-on-Si photonic platform with independent Si3N4 and Si waveguides and taper transitions to couple light between the layers. The platform combines the excellent passive waveguide properties of Si3N4 and the compatibility of Si waveguides with electro-optic devices. Within the platform, we propose and demonstrate dual-level, Si3N 4-on-Si, fiber-to-chip grating couplers that simultaneously have wide bandwidths and high coupling efficiencies. Conventional Si and Si3N 4 grating couplers suffer from a trade-off between bandwidth and coupling efficiency. The dual-level grating coupler achieved a peak coupling efficiency of -1.3 dB and a 1-dB bandwidth of 80 nm, a record for the

  16. A highly scalable fully non-blocking silicon photonic switch fabric

    CERN Document Server

    Nikolova, Dessislava; Liu, Yang; Rumley, Sebastien; Novack, Ari; Baehr-Jones, Tom; Hochberg, Michael; Bergman, Keren


    Large port count spatial optical switches will facilitate flexible and energy efficient data movement in future data communications systems, especially if they are capable of nanosecond-order reconfiguration times. In this work, we demonstrate an 8x8 microring-based silicon photonic switch with software controlled switching. The proposed switch architecture is modular as it assembles multiple identical components with multiplexing/demultiplexing functionalities. The switch is fully non-blocking, has path independent insertion loss, low crosstalk and is straightforward to control. A scalability analysis shows that this architecture can scale to very large port counts. This work represents the first demonstration of real-time firmware controlled switching with silicon photonics devices integrated at the chip scale.

  17. Little-Parks oscillations with half-quantum fluxoid features in Sr2RuO4 microrings (United States)

    Yasui, Yuuki; Lahabi, Kaveh; Anwar, Muhammad Shahbaz; Nakamura, Yuji; Yonezawa, Shingo; Terashima, Takahito; Aarts, Jan; Maeno, Yoshiteru


    In a microring of a superconductor with a spin-triplet equal-spin pairing state, a fluxoid, a combined object of magnetic flux and circulating supercurrent, can penetrate as half-integer multiples of the flux quantum. A candidate material to investigate such half-quantum fluxoids is Sr2RuO4 . We fabricated Sr2RuO4 microrings using single crystals and measured their resistance behavior under magnetic fields controlled with a three-axis vector magnet. Proper Little-Parks oscillations in the magnetovoltage as a function of an axially applied field, associated with fluxoid quantization, are clearly observed using bulk single-crystalline superconductors. We then performed magnetovoltage measurements with additional in-plane magnetic fields. By carefully analyzing both the voltages V+ (V-) measured at positive (negative) current, we find that, above an in-plane threshold field of about 10 mT, the magnetovoltage maxima convert to minima. We interpret this behavior as the peak splitting expected for the half-quantum fluxoid states.

  18. Athermal laser launch telescopes

    NARCIS (Netherlands)

    Kamphues, F.G.; Henselmans, R.; Rijnveld, N.; Lemmen, M.H.J.; Doelman, N.J.; Nijkerk, M.D.


    ESO has developed a concept for a compact laser guide star unit for use in future Adaptive Optics (AO) systems. A small powerful laser is combined with a telescope that launches the beam, creating a single modular unit that can be mounted directly on a large telescope. This approach solves several

  19. Tens of GHz Tantalum pentoxide-based micro-ring all-optical modulator for Si photonics

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Chung-Lun; Chi, Wen-Chun; Chiu, Yi-Jen; Lin, Yuan-Yao; Hung, Yung-Jr; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan (China); Hsieh, Cheng-Hsuan; Lin, Gong-Ru [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei (China); Shih, Min-Hsiung [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan (China); Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan (China); Lee, Chao-Kuei [Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan (China)


    A tantalum pentoxide-based (Ta{sub 2}O{sub 5}-based) micro-ring all-optical modulator was fabricated. The refractive index inside the micro-ring cavity was modified using the Kerr effect by injecting a pumped pulse. The transmittance of the ring resonator was controlled to achieve all-optical modulation at the wavelength of the injected probe. When 12 GHz pulses with a peak power of 1.2 W were coupled in the ring cavity, the transmission spectrum of the Ta{sub 2}O{sub 5} resonator was red-shifted by 0.04 nm because of the Kerr effect. The relationship between the modulation depth and gap of the Ta{sub 2}O{sub 5} directional coupler is discussed. An optimized gap of 1100 nm was obtained, and a maximum buildup factor of 11.7 with 84% modulation depth was achieved. The nonlinear refractive index of Ta{sub 2}O{sub 5} at 1.55 μm was estimated as 3.4 x 10{sup -14} cm{sup 2}/W based on the Kerr effect, which is almost an order of magnitude higher than that of Si{sub 3}N{sub 4}. All results indicate that Ta{sub 2}O{sub 5} has potential for use in nonlinear waveguide applications with modulation speeds as high as tens of GHz. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Heterogeneously integrated silicon photonics for the mid-infrared and spectroscopic sensing. (United States)

    Chen, Yu; Lin, Hongtao; Hu, Juejun; Li, Mo


    Besides being the foundational material for microelectronics, crystalline silicon has long been used for the production of infrared lenses and mirrors. More recently, silicon has become the key material to achieve large-scale integration of photonic devices for on-chip optical interconnect and signal processing. For optics, silicon has significant advantages: it offers a very high refractive index and is highly transparent in the spectral range from 1.2 to 8 μm. To fully exploit silicon’s superior performance in a remarkably broad range and to enable new optoelectronic functionalities, here we describe a general method to integrate silicon photonic devices on arbitrary foreign substrates. In particular, we apply the technique to integrate silicon microring resonators on mid-infrared compatible substrates for operation in the mid-infrared. These high-performance mid-infrared optical resonators are utilized to demonstrate, for the first time, on-chip cavity-enhanced mid-infrared spectroscopic analysis of organic chemicals with a limit of detection of less than 0.1 ng.

  1. Seroprevalencia de Hepatitis C en el personal asistencial del Hospital regional de Ayacucho y la Microrred de Salud Huamanga. Ayacucho, Perú 2005

    Directory of Open Access Journals (Sweden)

    Sara Ramos V


    Full Text Available Se efectuó una encuesta epidemiológica al personal de salud del Hospital Regional de Ayacucho y al personal de los establecimientos de salud de su jurisdicción (Microrred Huamanga, sobre la exposición laboral al virus de la hepatitis C (VHC; se realizó ELISA en suero para detectar anticuerpos contra el VHC. Participaron 320 de 518 trabajadores en total, representando 44,1% (156/354 del hospital y 100% (164 de la microrred. No se detectaron anticuerpos contra HVC en ninguna trabajador, pero 211 (65,9% trabajadores reconocieron haber tenido al menos un accidente laboral (69,2% en el hospital y 62,8% en la microrred, siendo 182 (56,9% percutáneos; en 55,3% el líquido contaminante fue la sangre. En conclusión, si bien no encontramos infección por el VHC en el personal de salud, la necesidad de implementar un programa de prevención y manejo de riesgos laborales quedó evidenciada y debería ser tomada en cuenta.

  2. High-quality silicon on silicon nitride integrated optical platform with an octave-spanning adiabatic interlayer coupler. (United States)

    Hosseinnia, Amir H; Atabaki, Amir H; Eftekhar, Ali A; Adibi, Ali


    Hybrid nanophotonic platforms based on three-dimensional integration of different photonic materials are emerging as promising ecosystems for the optoelectronic device fabrication. In order to benefit from key features of both silicon (Si) and silicon nitride (SiN) on a single chip, we have developed a wafer-scale hybrid photonic platform based on the integration of a thin crystalline Si layer on top of a thin SiN layer with an ultra-thin oxide buffer layer. A complete optical path in the hybrid platform is demonstrated by coupling light back and forth between nanophotonic devices in Si and SiN layers. Using an adiabatic tapered coupling method, a record-low interlayer coupling-loss of 0.02 dB is achieved at 1550 nm telecommunication wavelength window. We also demonstrate high-Q resonators on the hybrid material platform with intrinsic Q's as high as 3 × 10(6) for a 60 μm-radius microring resonator, which is (to the best of our knowledge) the highest Q observed for a micro-resonator on a hybrid Si/SiN platform.

  3. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions. (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q


    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  4. Demonstration of a compact wavelength tracker using a tunable silicon resonator. (United States)

    Tao, Jifang; Cai, Hong; Gu, Yuandong; Liu, Aiqun


    Here, we demonstrate a chip-scale integrated optical wavelength tracker with fast response and compact format. By exploiting the electro-optic(EO) effect on a thermally controlled silicon micro-ring resonator filter, the proposed tracker can operate over a wide wavelength range according to the thermo-optic (TO) effect; meanwhile, the tracker's response speed is greatly improved through the EO effect (i.e. tracking within 1 ns), as compared to the traditional TO controlled methods (typical ~10 μs). With the integration of a photodiode onto the photonics chip, the compact chip is with a footprint of 0.5 mm × 1.5 mm. This tracker has potential applications for wavelength tacking in advanced DWDM network systems, tunable laser sources, and high performance optical sensors.

  5. Diseño de controladores para inversores monofásicos operando en modo isla dentro de una microrred

    Directory of Open Access Journals (Sweden)

    R. Ortega


    Full Text Available Resumen: En este trabajo se presenta el diseño e implementación de tres controladores: control proporcional-integral, control proporcional-integral más controlador resonante y una nueva propuesta de control configurada con un control proporcional-integral + controlador proporcional más controlador resonante. El diseño de estos controladores está orientado a la operación de inversores en modo isla dentro del contexto de las microrredes, su rendimiento ha sido validado por medio de resultados de simulaciones y por medio de pruebas experimentales. Particularmente, la configuración de control propuesta presenta como ventaja respecto a los otros dos controladores, el evitar fenómenos de saturación que se presentan en los sistemas, los cuales ocurren cuando se presentan señales de control de gran amplitud. Además de mejorar el rechazo de perturbaciones que se presentan, cuando el inversor alimenta cargas lineales y no lineales. Es decir, con la combinación de ambos controladores, se consigue una solución adecuada para reducir la distorsión armónica total en la tensión de salida de un inversor monofásico, cuando se alimentan cargas en forma aislada o bien con el inversor desconectado de la red. Palabras clave: Controlador PI-P, controlador resonante, inversor monofásico, microrred, modo isla

  6. Simulation of mode lock lasers using microring resonators integrated with InGaAsP saturable absorbers (United States)

    Amiri, I. S.; Ariannejad, M. M.; Ahmad, H.; Yupapin, P.


    Add-drop microring resonators (MRRs) are used in a wide variety of practical applications. To add or drop special wavelength division multiplexing, an optical wavelength selective ring resonator can be used. This paper presents a system of multiple mode lock lasers consisting of an add-drop MRR integrated into a smaller ring with a saturable absorber (SA). In the case of mode-locking, a semiconductor is presented as the SA. This study uses an InGaAsP/InP semiconductor with an InP substrate and a direct bandgap as the MRR. The time-domain traveling wave method is utilized to model the presented photonic circuits. The generated multi-wavelength mode lock lasers have a bandwidth and free spectral range (FSR) of 1.1 and 30.24 nm, corresponding to 0.137 and 3.77 THz, respectively. The drop port output signals have a bandwidth and FSR of 1.5 and 30.24 nm, corresponding to 0.187 and 3.77 THz in the frequency domain. A finesse of 20.16 is obtained, and the Q-factor is 1 × 103. The side bands of the mode lock lasers have an FSR of 0.86 nm.

  7. Design and optimization of high-performance slot-microring Si-photodetector based on internal photoemission effect (United States)

    Hosseinifar, Mitra; Ahmadi, Vahid; Ebnali-Heidari, Majid


    This paper presents the design and optimization of a microring resonator enhanced-internal photoemission effect-photodetectors (MRRE-IPE-PDs) suitable for optical communication. Two PD configurations are considered: the first consists of an MRR that is partially surrounded by a nanolayer of silicide with a single Schottky barrier on p-Si MRR; and the second consists of a silicide film buried in the width midpoints of a Si-based MRR where photoemission occurs over the two Schottky barriers. Several silicides are considered for the stripe (PtSi, Pd2Si, TaSi2 and CoSi2). The important features of the device, such as quantum efficiency (QE), responsivity, CW sensitivity and dark current are discussed and the trade-off between 3 dB bandwidth and QE are analyzed for nanoscaled absorption layer. In this regard, some design curves are presented for the optimized MRRE-IPE-PDs. Additionally, this paper reveals substantial improvement via comparisons with QE and responsivity measurements reported in the literature. Bandwidth-efficiency product of 61-71 GHz, responsivities of 0.8-0.9 and QE of 64-71% and the minimum receiver sensitivity of -65 to -66 dBm are also predicted for single and double Schottky barriers, respectively.

  8. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others


    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  9. Optimisation Design of Coupling Region Based on SOI Micro-Ring Resonator

    Directory of Open Access Journals (Sweden)

    Shubin Yan


    Full Text Available Design optimization of the coupling region is conducted in order to solve the difficulty of achieving a higher quality factor (Q for large size resonators based on silicon-on-insulator (SOI. Relations among coupling length, coupling ratio and quality factor of the optical cavities are theoretically analyzed. Resonators (R = 100 μm with different coupling styles, concentric, straight, and butterfly, are prepared by the micro-electro-mechanical-systems (MEMS process. Coupling experimental results show that micro-cavity of butterfly-coupled style obtains the narrowest (3 dB bandwidth, and the quality factor has been greatly improved. The results provide the foundation for realization of a large size, high-Q resonator, and its development and application in the integrated optical gyroscopes, filters, sensors, and other related fields.

  10. Multi-planar amorphous silicon photonics with compact interplanar couplers, cross talk mitigation, and low crossing loss

    Directory of Open Access Journals (Sweden)

    Jeff Chiles


    Full Text Available We propose and experimentally demonstrate a photonic routing architecture that can efficiently utilize the space of multi-plane (3D photonic integration. A wafer with three planes of amorphous silicon waveguides was fabricated and characterized, demonstrating < 3 × 1 0 − 4 dB loss per out-of-plane waveguide crossing, 0.05 ± 0.02 dB per interplane coupler, and microring resonators on three planes with a quality factors up to 8.2 × 1 0 4 . We also explore a phase velocity mapping strategy to mitigate the cross talk between co-propagating waveguides on different planes. These results expand the utility of 3D photonic integration for applications such as optical interconnects, neuromorphic computing and optical phased arrays.

  11. Silicon Photonics-Silicon Raman Lasers

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 12; Issue 10. Silicon Photonics - Silicon Raman Lasers. P K Basu. General Article Volume 12 ... Keywords. Silicon photonics; Si Raman laser; semiconductor laser; light emitter; optical interconnect; optical communication; Indirect gap semiconductors.

  12. Silicone chain extender

    DEFF Research Database (Denmark)


    The present invention relates to a silicone chain extender, more particularly a chain extender for silicone polymers and copolymers, to a chain extended silicone polymer or copolymer and to a functionalized chain extended silicone polymer or copolymer, to a method for the preparation thereof...

  13. Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection. (United States)

    Doylend, J K; Jessop, P E; Knights, A P


    We describe, model and demonstrate a tunable micro-ring resonator integrated monolithically with a photodiode in a silicon waveguide device. The photodiode is made sensitive to wavelengths at and around 1550nm via the introduction of lattice damage through selective ion implantation. The ring resonator enhances detector responsivity in a 60 mum long waveguide photodiode such that it is 0.14 A/W at -10Vbias with less than 0.2 nA leakage current. The device is tunable such that resonance (and thus detection) can be achieved at any wavelength from 1510 - 1600 nm. We also demonstrate use of the device as a digital switch with integrated power monitoring, 20 dB extinction, and no optical power tapped from the output path to the photodiode. A theoretical description suggests that for a critically coupled resonator where the round trip loss is dominated by the excess defects used to mediate detection, the maximum responsivity is independent of device length. This leads to the possibility of extremely small detector geometries in silicon photonics with no requirement for the use of III-V materials or germanium.

  14. 4-PAM Dispersion-Uncompensated Transmission with Micro-Ring Resonator Enhanced 1.55-µm DML

    DEFF Research Database (Denmark)

    Da Ros, Francesco; Cristofori, Valentina; Ozolins, Oskars


    Real-time transmission of 14-GBd 4-PAM signal is demonstrated by combining a commercial 1.55-µm DML with a silicon MRR. BER below the HD-FEC threshold is measured after 26-km SSMF transmission without offline digital signal processing.......Real-time transmission of 14-GBd 4-PAM signal is demonstrated by combining a commercial 1.55-µm DML with a silicon MRR. BER below the HD-FEC threshold is measured after 26-km SSMF transmission without offline digital signal processing....

  15. 4-PAM dispersion-uncompensated transmission with micro-ring resonator enhanced 1.55-μm DML

    DEFF Research Database (Denmark)

    Da Ros, Francesco; Cristofori, Valentina; Ozolins, Oskars


    Real-time transmission of 14-GBd 4-PAM signal is demonstrated by combining a commercial 1.55-μm DML with a silicon MRR. BER below the HD-FEC threshold is measured after 26-km SSMF transmission without offline digital signal processing.......Real-time transmission of 14-GBd 4-PAM signal is demonstrated by combining a commercial 1.55-μm DML with a silicon MRR. BER below the HD-FEC threshold is measured after 26-km SSMF transmission without offline digital signal processing....

  16. Silicon takes a spin

    NARCIS (Netherlands)

    Jansen, R.

    An efficient way to transport electron spins from a ferromagnet into silicon essentially makes silicon magnetic, and provides an exciting step towards integration of magnetism and mainstream semiconductor electronics.

  17. 4-PAM dispersion-uncompensated transmission with micro-ring resonator enhanced 1.55-µm DML


    Da Ros, Francesco; Cristofori, Valentina; Ozolins, Oskars; Chaibi, Mohamed; Pang, Xiaodan; Jacobsen, Gunnar; Popov, Sergei; Galili, Michael; Oxenløwe, Leif Katsuo; Peucheret, Christophe


    International audience; Real-time transmission of 14-GBd 4-PAM signal is demonstrated by combining a commercial 1.55-µm DML with a silicon MRR. BER below the HD-FEC threshold is measured after 26-km SSMF transmission without offline digital signal processing.

  18. Producing Silicon Carbide/Silicon Nitride Fibers (United States)


    Manufacturing process makes CxSiyNz fibers. Precursor fibers spun from extruding machine charged with polycarbosilazane resin. When pyrolyzed, resin converted to cross-linked mixture of silicon carbide and silicon nitride, still in fiber form. CxSiyNz fibers promising substitutes for carbon fibers in high-strength, low-weight composites where high electrical conductivity unwanted.

  19. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan


    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  20. Silicon photonics beyond silicon-on-insulator (United States)

    Chiles, Jeff; Fathpour, Sasan


    The standard platform for silicon photonics has been ridge or channel waveguides fabricated on silicon-on-insulator (SOI) wafers. SOI waveguides are so versatile and the technology built around it is so mature and popular that silicon photonics is almost regarded as synonymous with SOI photonics. However, due to several shortcomings of SOI photonics, novel platforms have been recently emerging. The shortcomings could be categorized into two sets: (a) those due to using silicon as the waveguide core material; and (b) those due to using silicon dioxide as the bottom cladding layer. Several heterogeneous platforms have been developed to address the first set of shortcomings. In such important heterogeneous integrated photonic platforms, the top silicon layer of SOI is typically replaced by a thin film of another optical material with a refractive index higher than the buried oxide (BOX) bottom cladding layer. Silicon is still usually preferred as the substrate of choice, but silicon has no optical functionality. In contrast, the second category of solutions aim at using silicon as the core waveguide material, while resolving issues related to the BOX layer. Particularly, one of the main drawbacks of SOI is that the BOX layer induces high optical loss in the mid-wavelength infrared (mid-IR) range. Accordingly, a host of platforms have been proposed, and some have been demonstrated, in which the BOX is replaced with insulating materials that have low intrinsic loss in the mid-IR. Examples are sapphire, lithium niobate, silicon nitride and air (suspended Si membrane waveguides). Although silicon is still the preferred substrate, sometimes a thin film of silicon, on which the optical waveguide is formed, is directly placed on top of another substrate (e.g., sapphire or lithium niobate). These alternative substrates act as both mechanical support and the lower cladding layer. In addition to the demands of mid-IR photonics, the non-SOI platforms can potentially offer other

  1. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald


    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  2. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M. [National Renewable Energy Lab., Golden, CO (United States)] [and others


    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  3. Optically Active Organic Microrings

    DEFF Research Database (Denmark)

    Balzer, Frank; Beermann, J.; Bozhevolnyi, S. I.


    -hexaphenyl molecules are generated on mica surfaces, possessing narrow size distributions with mean diameters of a few micrometers, wall widths of 100 to 200 nm, and wall heights of several hundred nanometers. Polarized linear and nonlinear optics reveals that the rings are made up of radially o...

  4. Liquid Silicon Pouch Anode (United States)


    Docket No. 300139 1 of 13 LIQUID SILICON POUCH ANODE STATEMENT OF GOVERNMENT INTEREST [0001] The invention described herein may be manufactured... silicon -based anodes during cycling, lithium insertion and deinsertion. Mitigation of this problem has long been sought and will result in improved...with other potential lithium alloy materials such as gallium and tin. Silicon -based solid state anodes are typically composed of small particles of

  5. Silicon spin communication


    Dery, Hanan; Song, Yang; Li, Pengke; Zutic, Igor


    Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on modulating spin polarization of a constant current in silicon wires. We provide figures of merit for this scheme by studying spin relaxation and drift-diffusion models in silicon.

  6. Handbook of silicon photonics

    CERN Document Server

    Pavesi, Lorenzo


    The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors, multiplexers, light sources, and various subsystems, have been developed that take advantage of state-of-the-art silicon technology.

  7. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    CERN Document Server

    Zhang, Xingyu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chen, Ray T


    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 um-long coupled L0-type photonic crystalmicrocavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystalmicrocavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystalmicrocavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 us, and a fall time of 18.5 us. The measured on-chip loss on the transmission band is as l...

  8. Silicon web process development (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.


    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  9. Mode-Division Multiplexing for Silicon Photonic Network-on-Chip (United States)

    Wu, Xinru; Huang, Chaoran; Xu, Ke; Shu, Chester; Tsang, Hon Ki


    Optical interconnect is a potential solution to attain the large bandwidth on-chip communications needed in high performance computers in a low power and low cost manner. Mode-division multiplexing (MDM) is an emerging technology that scales the capacity of a single wavelength carrier by the number of modes in a multimode waveguide, and is attractive as a cost-effective means for high bandwidth density on-chip communications. Advanced modulation formats with high spectral efficiency in MDM networks can further improve the data rates of the optical link. Here, we demonstrate an intra-chip MDM communications link employing advanced modulation formats with two waveguide modes. We demonstrate a compact single wavelength carrier link that is expected to support 2x100 Gb/s mode multiplexed capacity. The network comprised integrated microring modulators at the transmitter, mode multiplexers, multimode waveguide interconnect, mode demultiplexers and integrated germanium on silicon photodetectors. Each of the mode channels achieves 100 Gb/s line rate with 84 Gb/s net payload data rate at 7% overhead for hard-decision forward error correction (HD-FEC) in the OFDM/16-QAM signal transmission.

  10. Nonlinear silicon photonics (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.


    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  11. ALICE silicon strip module

    CERN Multimedia

    Maximilien Brice


    This small silicon detector strip will be inserted into the inner tracking system (ITS) on the ALICE detector at CERN. This detector relies on state-of-the-art particle tracking techniques. These double-sided silicon strip modules have been designed to be as lightweight and delicate as possible as the ITS will eventually contain five square metres of these devices.

  12. Silicon Valley: Planet Startup

    NARCIS (Netherlands)

    Dr. P. Ester; dr. A. Maas


    For decades now, Silicon Valley has been the home of the future. It's the birthplace of the world's most successful high-tech companies-including Apple, Yahoo, Google, Facebook, Twitter, and many more. So what's the secret? What is it about Silicon Valley that fosters entrepreneurship and

  13. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    plasma effect have been tested up to 40 Gbit/s, and hybrid evanescent silicon lasers have been realized both in the form of distributed feed-back lasers and micro-disk lasers. For enhancing the impact of silicon photonics in future ultrafast and energy-efficient all-optical signal processing, e......Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice...... has been an obstacle for a simple realization of electro-optic modulators, and its indirect band gap has prevented the realization of efficient silicon light emitting diodes and lasers. Still, significant progress has been made in the past few years. Electro-optic modulators based on the free carrier...

  14. Silicone-containing composition (United States)

    Mohamed, Mustafa


    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  15. Intraventricular Silicone Oil (United States)

    Mathis, Stéphane; Boissonnot, Michèle; Tasu, Jean-Pierre; Simonet, Charles; Ciron, Jonathan; Neau, Jean-Philippe


    Abstract Intracranial silicone oil is a rare complication of intraocular endotamponade with silicone oil. We describe a case of intraventricular silicone oil fortuitously observed 38 months after an intraocular tamponade for a complicated retinal detachment in an 82 year-old woman admitted in the Department of Neurology for a stroke. We confirm the migration of silicone oil along the optic nerve. We discuss this rare entity with a review of the few other cases reported in the medical literature. Intraventricular migration of silicone oil after intraocular endotamponade is usually asymptomatic but have to be known of the neurologists and the radiologists because of its differential diagnosis that are intraventricular hemorrhage and tumor. PMID:26735537

  16. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed


    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  17. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto


    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  18. Transformational silicon electronics. (United States)

    Rojas, Jhonathan Prieto; Torres Sevilla, Galo Andres; Ghoneim, Mohamed Tarek; Inayat, Salman Bin; Ahmed, Sally M; Hussain, Aftab Mustansir; Hussain, Muhammad Mustafa


    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry's most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications.

  19. Silicon applications in photonics (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.


    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  20. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.


    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  1. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others


    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  2. Silicon tracker for LHC

    Energy Technology Data Exchange (ETDEWEB)

    Bencze, G.; Bosteels, M.; Brenner, R.; Czellar, S.; Ekman, K.; Hentinen, A.; Hietanen, I.; Huhtinen, M.; Inkinen, S.; Karimaeki, V.; Karttaavi, T.; Kinnunen, R.; Lindgren, J.; Merlo, J.P.; Oksakivi, T.; Onnela, A.; Orava, R.; Pietarinen, E.; Pimiae, M.; Roth, W.; Roennqvist, C.; Saarikko, J.P.; Schulman, T.; Tuuva, T.; Voutilainen, M.; Vuoskoski, J.; Oesterberg, K. (Research Inst. for High Energy Physics, SEFT, Helsinki (Finland) Physics Dept., Univ. of Helsinki (Finland) Univ. of Technology, Helsinki, Espoo (Finland) AAbo Akademi, Domkyrkotorget, Turku (Finland) Univ. of Technology, Tampere (Finland) DAPNIA, Centre d' Etudes Nucleaires, 91 Gif-sur-Yvette, Saclay (France) CERN, Geneva (Switzerland))


    A study of a possible layout of a Silicon tracker has been done. The design is based on simulations done in the context of the Compact Muon Solenoid (CMS) detector for the LHC. The high granularity of the silicon strip detectors yields to low occupancies. New type of a silicon strip detector, single sided stereo angle detector (SSSD), has been designed to match the requirements of a LHC tracker. This detector allows a z-coordinate measurement without increasing the number of channels i.e. power consumption and it facilitates a tracker design with reasonable complicity. (orig.)

  3. Advanced silicon on insulator technology (United States)

    Godbey, D.; Hughes, H.; Kub, F.


    Undoped, thin-layer silicon-on-insulator was fabricated using wafer bonding and selective etching techniques employing a molecular beam epitaxy (MBE) grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200-350 nm silicon layers over silicon dioxide are routinely fabricated using this procedure. A new selective silicon-germanium etch was developed that significantly improves the ease of fabrication of the bond and etch back silicon insulator (BESOI) material.

  4. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail:; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)


    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  5. Porous Silicon Nanowires (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng


    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  6. ALICE Silicon Pixel Detector

    CERN Multimedia


    The Silicon Pixel Detector (SPD) is part of the Inner Tracking System (ITS) of the ALICE experiment : . SPD Structure . Bump Bonding . Test beam . ALICE1LHCb Readout Chip . Chip Tests . Data from the SPD

  7. Silicon production process evaluations (United States)


    Engineering design of the third distillation column in the process was accomplished. The initial design is based on a 94.35% recovery of dichlorosilane in the distillate and a 99.9% recovery of trichlorosilane in the bottoms. The specified separation is achieved at a reflux ratio of 15 with 20 trays (equilibrium stages). Additional specifications and results are reported including equipment size, temperatures and pressure. Specific raw material requirements necessary to produce the silicon in the process are presented. The primary raw materials include metallurgical grade silicon, silicon tetrachloride, hydrogen, copper (catalyst) and lime (waste treatment). Hydrogen chloride is produced as by product in the silicon deposition. Cost analysis of the process was initiated during this reporting period.

  8. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer


    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  9. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.


    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  10. Silicon-Based Light Sources for Silicon Integrated Circuits

    Directory of Open Access Journals (Sweden)

    L. Pavesi


    Full Text Available Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

  11. Nanoslits in silicon chips. (United States)

    Aref, Thomas; Brenner, Matthew; Bezryadin, Alexey


    Potassium hydroxide (KOH) etching of a patterned [100] oriented silicon wafer produces V-shaped etch pits. We demonstrate that the remaining thickness of silicon at the tip of the etch pit can be reduced to approximately 5 microm using an appropriately sized etch mask and optical feedback. Starting from such an etched chip, we have developed two different routes for fabricating 100 nm scale slits that penetrate through the macroscopic silicon chip (the slits are approximately 850 microm wide at one face of the chip and gradually narrow to approximately 100-200 nm wide at the opposite face of the chip). In the first process, the etched chips are sonicated to break the thin silicon at the tip of the etch pit and then further KOH etched to form a narrow slit. In the second process, focused ion beam milling is used to etch through the thin silicon at the tip of the etch pit. The first method has the advantage that it uses only low-resolution technology while the second method offers more control over the length and width of the slit. Our slits can be used for preparing mechanically stable, transmission electron microscopy samples compatible with electrical transport measurements or as nanostencils for depositing nanowires seamlessly connected to their contact pads.

  12. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.


    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  13. Characterization of Integrated Optical Strain Sensors Based on Silicon Waveguides

    NARCIS (Netherlands)

    Westerveld, W.J.; Leinders, S.M.; Muilwijk, P.M.; Pozo, J.


    Microscale strain gauges are widely used in micro electro-mechanical systems (MEMS) to measure strains such as those induced by force, acceleration, pressure or sound. We propose all-optical strain sensors based on micro-ring resonators to be integrated with MEMS. We characterized the strain-induced

  14. Silicon Bulk Micromachined Vibratory Gyroscope (United States)

    Tang, T. K.; Gutierrez, R. C.; Wilcox, J. Z.; Stell, C.; Vorperian, V.; Calvet, R.; Li, W. J.; Charkaborty, I.; Bartman, R.; Kaiser, W. J.


    This paper reports on design, modeling, fabrication, and characterization of a novel silicon bulk micromachined vibratory rate gyroscope designed for microspacecraft applications. The new microgyroscope consists of a silicon four leaf cloverstructure with a post attached to the center.

  15. Neuromorphic Silicon Neuron Circuits (United States)

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena


    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  16. The LHCb Silicon Tracker

    CERN Document Server

    Vollhardt, A


    The LHCb detector is a collider experiment at the new LHC at CERN/Switzerland. It is dedicated to measure precisely CP violation parameters in the B-system. The LHCb Silicon Tracker is covering the regions of the tracking detector with the highest particle fluences. The silicon sensors are wide pitch strip detectors connected to multi-channel analogue readout amplifiers. The analogue data is then digitized and transmitted optically to the counting room for further processing. The following paper describes R&D of the silicon sensors performed including testbeam data. We present readout chip performance followed by an overview of the used data transmission system, which has been designed for radiation tolerance and low cost.

  17. Integrated Silicon Optoelectronics

    CERN Document Server

    Zimmermann, Horst K


    Integrated Silicon Optoelectronics synthesizes topics from optoelectronics and microelectronics. The book concentrates on silicon as the major base of modern semiconductor devices and circuits. Starting from the basics of optical emission and absorption, as well as from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed. Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included. The book, furthermore, contains a review of the newest state of research on eagerly anticipated silicon light emitters. In order to cover the topics comprehensively, also included are integrated waveguides, gratings, and optoelectronic power devices. Numerous elaborate illustrations facilitate and enhance comprehension. This extended edition will be of value to engineers, physicists, and scientists in industry and at universities. The book is also recommended to graduate student...

  18. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri


    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  19. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter


    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  20. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam


    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  1. The Silicon Cube detector

    Energy Technology Data Exchange (ETDEWEB)

    Matea, I.; Adimi, N. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France); Blank, B. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France)], E-mail:; Canchel, G.; Giovinazzo, J. [Centre d' Etudes Nucleaires de Bordeaux Gradignan - Universite Bordeaux 1 - UMR 5797, CNRS/IN2P3, Chemin du Solarium, BP 120, F-33175 Gradignan Cedex (France); Borge, M.J.G.; Dominguez-Reyes, R.; Tengblad, O. [Insto. Estructura de la Materia, CSIC, Serrano 113bis, E-28006 Madrid (Spain); Thomas, J.-C. [GANIL, CEA/DSM - CNRS/IN2P3, BP 55027, F-14076 Caen Cedex 5 (France)


    A new experimental device, the Silicon Cube detector, consisting of six double-sided silicon strip detectors placed in a compact geometry was developed at CENBG. Having a very good angular coverage and high granularity, it allows simultaneous measurements of energy and angular distributions of charged particles emitted from unbound nuclear states. In addition, large-volume Germanium detectors can be placed close to the collection point of the radioactive species to be studied. The setup is ideally suited for isotope separation on-line (ISOL)-type experiments to study multi-particle emitters and was tested during an experiment at the low-energy beam line of SPIRAL at GANIL.

  2. Silicon detectors at the ILC

    Energy Technology Data Exchange (ETDEWEB)

    Brau, James E. [University of Oregon, Eugene, OR 97405-1274 (United States)], E-mail:; Breidenbach, Martin [Stanford Linear Accelerator Center, Menlo Park, CA 94025 (United States); Baltay, Charles [Yale University, New Haven, CT 06520-8120 (United States); Frey, Raymond E.; Strom, David M. [University of Oregon, Eugene, OR 97405-1274 (United States)


    Silicon detectors are being developed for several applications in ILC detectors. These include vertex detection, tracking, electromagnetic calorimetry, and forward detectors. The advantages of silicon detector technology have been incorporated into a full detector design, SiD (the Silicon Detector). A brief overview of this effort is presented.

  3. Silicon quantum dots: surface matters

    NARCIS (Netherlands)

    Dohnalová, K.; Gregorkiewicz, T.; Kůsová, K.


    Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers—silicon

  4. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G


    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  5. Silicone/Acrylate Copolymers (United States)

    Dennis, W. E.


    Two-step process forms silicone/acrylate copolymers. Resulting acrylate functional fluid is reacted with other ingredients to produce copolymer. Films of polymer were formed by simply pouring or spraying mixture and allowing solvent to evaporate. Films showed good weatherability. Durable, clear polymer films protect photovoltaic cells.

  6. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn


    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex ...

  7. DELPHI Silicon Tracker

    CERN Document Server

    DELPHI was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The silicon tracking detector was nearest to the collision point in the centre of the detector. It was used to pinpoint the collision and catch short-lived particles.

  8. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V


    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  9. Silicon in cereal straw

    DEFF Research Database (Denmark)

    Murozuka, Emiko

    Silicon (Si) is known to be a beneficial element for plants. However, when plant residues are to be used as feedstock for second generation bioenergy, Si may reduce the suitability of the biomass for biochemical or thermal conversion technologies. The objective of this PhD study was to investigate...

  10. Electrometallurgy of Silicon (United States)


    on record is that of St. Claire DeVille, who claimed that silicon was produced by electrolysing an impure melt of NaAlC14, but his material did not...this composition and purified melts were electrolysed at about 14500C in graphite crucible and using graphite electrodes. Applied potentials were

  11. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  12. Silicon in beer and brewing. (United States)

    Casey, Troy R; Bamforth, Charles W


    It has been claimed that beer is one of the richest sources of silicon in the diet; however, little is known of the relationship between silicon content and beer style and the manner in which beer is produced. The purpose of this study was to measure silicon in a diversity of beers and ascertain the grist selection and brewing factors that impact the level of silicon obtained in beer. Commercial beers ranged from 6.4 to 56.5 mg L(-1) in silicon. Products derived from a grist of barley tended to contain more silicon than did those from a wheat-based grist, likely because of the high levels of silica in the retained husk layer of barley. Hops contain substantially more silicon than does grain, but quantitatively hops make a much smaller contribution than malt to the production of beer and therefore relatively less silicon in beer derives from them. During brewing the vast majority of the silicon remains with the spent grains; however, aggressive treatment during wort production in the brewhouse leads to increased extraction of silicon into wort and much of this survives into beer. It is confirmed that beer is a very rich source of silicon. (c) 2010 Society of Chemical Industry.

  13. Formation of silicon nanoparticles from high temperature annealed silicon rich silicon oxynitride films (United States)

    Slaoui, Abdelilah; Ehrhardt, Fabien; Delachat, Florian; Ferblantier, Gérald; Muller, Dominique


    Silicon rich silicon oxynitride layers were deposited by ECR-PECVD in order to form silicon nanoparticles upon high thermal annealing at 1100°C. The effect of the gas precursor type and flows on the atomic composition and the structural properties was assessed by RBS and ERDA analysis as well as by Raman spectroscopy. The morphological and crystalline properties of the resulting nanoparticles were investigated by TEM analysis. We have found that the silicon nanoparticules average size and the crystalline fraction depend strongly on the silicon excess in the SiN and SiON layer.

  14. Multiplexed silicon photonic sensor arrays enable facile characterization of coagulation protein binding to nanodiscs with variable lipid content. (United States)

    Muehl, Ellen M; Gajsiewicz, Joshua M; Medfisch, Sara M; Wiersma, Zachary S B; Morrissey, James H; Bailey, Ryan C


    Interactions of soluble proteins with the cell membrane are critical within the blood coagulation cascade. Of particular interest are the interactions of γ-carboxyglutamic acid-rich domain-containing clotting proteins with lipids. Variability among conventional analytical methods presents challenges for comparing clotting protein-lipid interactions. Most previous studies have investigated only a single clotting protein and lipid composition and have yielded widely different binding constants. Herein, we demonstrate that a combination of lipid bilayer nanodiscs and a multiplexed silicon photonic analysis technology enables high-throughput probing of many protein-lipid interactions among blood-clotting proteins. This approach allowed direct comparison of the binding constants of prothrombin, factor X, activated factor VII, and activated protein C to seven different binary lipid compositions. In a single experiment, the binding constants of one protein interacting with all lipid compositions were simultaneously determined. A simple surface regeneration then facilitated similar binding measurements for three other coagulation proteins. As expected, our results indicated that all proteins exhibit tighter binding (lower K d ) as the proportion of anionic lipid increases. Interestingly, at high proportions of phosphatidylserine, the K d values of all four proteins began to converge. We also found that although k off values for all four proteins followed trends similar to those observed for the K d values, the variation among the proteins was much lower, indicating that much of the variation came from the kinetic binding ( k on ) of the proteins. These findings indicate that the combination of silicon photonic microring resonator arrays and nanodiscs enables rapid interrogation of biomolecular binding interactions at model cell membrane interfaces. © 2017 by The American Society for Biochemistry and Molecular Biology, Inc.

  15. Recent advances in silicon photonic integrated circuits (United States)

    Bowers, John E.; Komljenovic, Tin; Davenport, Michael; Hulme, Jared; Liu, Alan Y.; Santis, Christos T.; Spott, Alexander; Srinivasan, Sudharsanan; Stanton, Eric J.; Zhang, Chong


    We review recent breakthroughs in silicon photonics technology and components and describe progress in silicon photonic integrated circuits. Heterogeneous silicon photonics has recently demonstrated performance that significantly outperforms native III-V components. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications, sensors and silicon electronics is reviewed.

  16. Silicon oxidation by ozone

    Energy Technology Data Exchange (ETDEWEB)

    Fink, Christian K; Jenkins, Stephen J [Department of Chemistry, University of Cambridge, Cambridge CB2 1EW (United Kingdom); Nakamura, Ken; Ichimura, Shingo [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)], E-mail:


    Understanding the oxidation of silicon has been an ongoing challenge for many decades. Ozone has recently received considerable attention as an alternative oxidant in the low temperature, damage-free oxidation of silicon. The ozone-grown oxide was also found to exhibit improved interface and electrical characteristics over a conventionally dioxygen-grown oxide. In this review article, we summarize the key findings about this alternative oxidation process. We discuss the different methods of O{sub 3} generation, and the advantages of the ozone-grown Si/SiO{sub 2} interface. An understanding of the growth characteristics is of utmost importance for obtaining control over this alternative oxidation process. (topical review)

  17. Silicon Carbide Electronic Devices (United States)

    Neudeck, P. G.


    The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

  18. Germanium epitaxy on silicon

    Directory of Open Access Journals (Sweden)

    Hui Ye


    Full Text Available With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  19. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)


    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Silicone breast implants: complications. (United States)

    Iwuagwu, F C; Frame, J D


    Silicone breast implants have been used for augmentation mammoplasty for cosmetic purposes as well as for breast reconstruction following mastectomy for more than three decades. Though the use of the silicone gel filled variety has been banned in the USA except for special cases, they continue to be available elsewhere in the world including the UK. Despite the immense benefit they provide, their usage is associated with some complications. Most of these are related to the surgery and can be reduced by good surgical management. The major complications associated with their use is adverse capsular contracture, an outcome which can be very frustrating to manage. This article reviews the commonly reported complications and suggested management alternatives.

  1. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet


    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  2. Electrons in silicon microstructures. (United States)

    Howard, R E; Jackel, L D; Mankiewich, P M; Skocpol, W J


    Silicon microstructures only a few hundred atoms wide can be fabricated and used to study electron transport in narrow channels. Spatially localized voltage probes as close together as 0.1 micrometer can be used to investigate a variety of physical phenomena, including velocity saturation due to phonon emission, the local potentials caused by scattering from a single trapped electron, and quantum tunneling or hopping among very few electron states.

  3. Bringing Silicon Valley inside. (United States)

    Hamel, G


    In 1998, Silicon Valley companies produced 41 IPOs, which by January 1999 had a combined market capitalization of $27 billion--that works out to $54,000 in new wealth creation per worker in a single year. Multiply the number of employees in your company by $54,000. Did your business create that much new wealth last year? Half that amount? It's not a group of geniuses generating such riches. It's a business model. In Silicon Valley, ideas, capital, and talent circulate freely, gathering into whatever combinations are most likely to generate innovation and wealth. Unlike most traditional companies, which spend their energy in resource allocation--a system designed to avoid failure--the Valley operates through resource attraction--a system that nurtures innovation. In a traditional company, people with innovative ideas must go hat in hand to the guardians of the old ideas for funding and for staff. But in Silicon Valley, a slew of venture capitalists vie to attract the best new ideas, infusing relatively small amounts of capital into a portfolio of ventures. And talent is free to go to the companies offering the most exhilarating work and the greatest potential rewards. It should actually be easier for large, traditional companies to set up similar markets for capital, ideas, and talent internally. After all, big companies often already have extensive capital, marketing, and distribution resources, and a first crack at the talent in their own ranks. And some of them are doing it. The choice is yours--you can do your best to make sure you never put a dollar of capital at risk, or you can tap into the kind of wealth that's being created every day in Silicon Valley.

  4. Structure of Silicon Clusters


    Pan, Jun; Bahel, Atul; Ramakrishna, Mushti V.


    We determined the structures of silicon clusters in the 11-14 atom size range using the tight-binding molecular dynamics method. These calculations reveal that \\Si{11} is an icosahedron with one missing cap, \\Si{12} is a complete icosahedron, \\Si{13} is a surface capped icosahedron, and \\Si{14} is a 4-4-4 layer structure with two caps. The characteristic feature of these clusters is that they are all surface.

  5. Dynamic Silicon Nanophotonics (United States)


    the waveguide. Furthermore, the design is fabricated using standard contact’s/via’s in a CMOS process (i.e. that traditionally connect metal layers to...process steps or even materials. It directly makes use of the standard metal contacts/via’s used to connect upper Metal layers to the active Silicon...Low-Voltage Lithium Niobate Electro-Optic Modulator,” In Preparation PERSONNEL SUPPORTED The following personnel have been supported by the YIP

  6. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M


    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  7. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal


    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  8. Epitaxial Silicon Doped With Antimony (United States)

    Huffman, James E.; Halleck, Bradley L.


    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  9. Radiation hardening of silicon detectors

    CERN Document Server

    Lemeilleur, F


    The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current and evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic impurities and from epitaxial silicon materials. Some recent results concerning their radiation hardness are presented. (15 refs).

  10. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP


    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  11. Silicone Gel-Filled Breast Implants (United States)

    ... Medical Procedures Implants and Prosthetics Breast Implants Silicone Gel-Filled Breast Implants Share Tweet Linkedin Pin it ... options Linkedin Pin it Email Print Description: Silicone gel-filled breast implants have a silicone outer shell ...

  12. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  13. Silicon on insulator with active buried regions (United States)

    McCarthy, Anthony M.


    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  14. The LHCb Silicon Tracker

    CERN Document Server

    Elsasser, Ch; Gallas Torreira, A; Pérez Trigo, A; Rodríguez Pérez, P; Bay, A; Blanc, F; Dupertuis, F; Haefeli, G; Komarov, I; Märki, R; Muster, B; Nakada, T; Schneider, O; Tobin, M; Tran, M T; Anderson, J; Bursche, A; Chiapolini, N; Saornil, S; Steiner, S; Steinkamp, O; Straumann, U; Vollhardt, A; Britsch, M; Schmelling, M; Voss, H; Okhrimenko, O; Pugatch, V


    The aim of the LHCb experiment is to study rare heavy quark decays and CP vio- lation with the high rate of beauty and charmed hadrons produced in $pp$ collisions at the LHC. The detector is designed as a single-arm forward spectrometer with excellent tracking and particle identification performance. The Silicon Tracker is a key part of the tracking system to measure the particle trajectories to high precision. This paper reports the performance as well as the results of the radiation damage monitoring based on leakage currents and on charge collection efficiency scans during the data taking in the LHC Run I.

  15. Edgeless silicon pad detectors

    Energy Technology Data Exchange (ETDEWEB)

    Perea Solano, B. [CERN, CH-1211 Geneva 23 (Switzerland)]. E-mail:; Abreu, M.C. [LIP and University of Algarve, 8000 Faro (Portugal); Avati, V. [CERN, CH-1211 Geneva 23 (Switzerland); Boccali, T. [INFN Sez. di Pisa and Scuola Normale Superiore, Pisa (Italy); Boccone, V. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Bozzo, M. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Capra, R. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Casagrande, L. [INFN Sez. di Roma 2 and Universita di Roma 2, Rome (Italy); Chen, W. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Eggert, K. [CERN, CH-1211 Geneva 23 (Switzerland); Heijne, E. [CERN, CH-1211 Geneva 23 (Switzerland); Klauke, S. [CERN, CH-1211 Geneva 23 (Switzerland); Li, Z. [Brookhaven National Laboratory, Upton, NY 11973-5000 (United States); Maeki, T. [Helsinki Institute of Physics, Helsinki (Finland); Mirabito, L. [CERN, CH-1211 Geneva 23 (Switzerland); Morelli, A. [INFN Sez. di Genova and Universita di Genova, Genoa (Italy); Niinikoski, T.O. [CERN, CH-1211 Geneva 23 (Switzerland); Oljemark, F. [Helsinki Institute of Physics, Helsinki (Finland); Palmieri, V.G. [Helsinki Institute of Physics, Helsinki (Finland); Rato Mendes, P. [LIP and University of Algarve, 8000 Faro (Portugal); Rodrigues, S. [LIP and University of Algarve, 8000 Faro (Portugal); Siegrist, P. [CERN, CH-1211 Geneva 23 (Switzerland); Silvestris, L. [INFN Sez. Di Bari, Bari (Italy); Sousa, P. [LIP and University of Algarve, 8000 Faro (Portugal); Tapprogge, S. [Helsinki Institute of Physics, Helsinki (Finland); Trocme, B. [Institut de Physique Nucleaire, Villeurbanne (France)


    We report measurements in a high-energy pion beam of the sensitivity of the edge region in 'edgeless' planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5{+-}8{sub stat.}.{+-}6{sub syst.}) {mu}m.

  16. Edgeless silicon pad detectors (United States)

    Perea Solano, B.; Abreu, M. C.; Avati, V.; Boccali, T.; Boccone, V.; Bozzo, M.; Capra, R.; Casagrande, L.; Chen, W.; Eggert, K.; Heijne, E.; Klauke, S.; Li, Z.; Mäki, T.; Mirabito, L.; Morelli, A.; Niinikoski, T. O.; Oljemark, F.; Palmieri, V. G.; Rato Mendes, P.; Rodrigues, S.; Siegrist, P.; Silvestris, L.; Sousa, P.; Tapprogge, S.; Trocmé, B.


    We report measurements in a high-energy pion beam of the sensitivity of the edge region in "edgeless" planar silicon pad diode detectors diced through their contact implants. A large surface current on such an edge prevents the normal reverse biasing of the device, but the current can be sufficiently reduced by the use of a suitable cutting method, followed by edge treatment, and by operating the detector at low temperature. The depth of the dead layer at the diced edge is measured to be (12.5±8 stat..±6 syst.) μm.

  17. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY


    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  18. Silicon wavelength-selective partial-drop broadcast filter bank. (United States)

    Su, Zhan; Cherchi, Matteo; Timurdogan, Erman; Sun, Jie; Moresco, Michele; Leake, Gerald; Coolbaugh, Douglas; Watts, Michael R


    We propose an approach to a wavelength-selective 1×N port optical broadcast network demonstrating the approach in a 1×8 port parallel optical drop filter bank utilizing adiabatic micro-ring tunable filters. The micro-ring filters exhibit first-order 92.7±3.7 GHz full width at half-maximum bandwidths with a 36.2 nm free spectral range, low-drop power variation (0.11 dB), and aggregate excess loss of only 1.1 dB in all drop ports. Error-free operation at a 10 Gbit/s data rate is achieved for all eight drop ports with less than a 0.5 dB power penalty among the ports. This wavelength-selective parallel-drop approach serves as a building block for on-chip all-to-all communication networks.

  19. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R


    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  20. Etched silicon gratings for NGST

    Energy Technology Data Exchange (ETDEWEB)

    Ge, J.; Ciarlo, D.; Kuzmenko, P.; Macintosh, B.; Alcock, C.; Cook, K.


    The authors have developed the world's first etched silicon grisms at LLNL in September 1999. The high optical surface quality of the grisms allows diffraction-limited spectral resolution in the IR wavelengths where silicon has good transmission. They estimated that the scattering light level is less than 4% at 2.2 {micro}m. Silicon can significantly increase the dispersive power of spectroscopic instruments for NGST due to its very large refractive index (n = 3.4). For example, a silicon grism with 40 mm clear entrance aperture and a 46 wedge angle can provide R = 10,000--100,000 in {approximately} 1--10 {micro}m. The same grating working in the immersed reflection mode can provide {approximately} three times higher spectral resolution than in the transmission mode. To achieve a desired spectral resolution for NGST, the spectrograph size and weight can be significantly reduced if silicon gratings are used instead of conventional gratings.

  1. Micromachined silicon seismic transducers

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Sniegowski, J.J.; Armour, D.L.; Fleming, R.P.


    Batch-fabricated silicon seismic transducers could revolutionize the discipline of CTBT monitoring by providing inexpensive, easily depolyable sensor arrays. Although our goal is to fabricate seismic sensors that provide the same performance level as the current state-of-the-art ``macro`` systems, if necessary one could deploy a larger number of these small sensors at closer proximity to the location being monitored in order to compensate for lower performance. We have chosen a modified pendulum design and are manufacturing prototypes in two different silicon micromachining fabrication technologies. The first set of prototypes, fabricated in our advanced surface- micromachining technology, are currently being packaged for testing in servo circuits -- we anticipate that these devices, which have masses in the 1--10 {mu}g range, will resolve sub-mG signals. Concurrently, we are developing a novel ``mold`` micromachining technology that promises to make proof masses in the 1--10 mg range possible -- our calculations indicate that devices made in this new technology will resolve down to at least sub-{mu}G signals, and may even approach to 10{sup {minus}10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  2. Microplasticity of silicon crystals (United States)

    Drozhzhin, A. I.; Sidel'Nikov, I. V.; Antipov, S. A.; Sedykh, N. K.


    The low-frequency (˜1 Hz) internal friction (Q-1) method was used to study the microplasticity of silicon whisker crystals grown by the method of chemical gas-transport reactions in a closed ampoule. A study was made of p-type crystals with the growth axis , 1 60 μ in diameter, working length 1 3 mm, both in the original state and after plastic (γ ˜ 1%) deformtion by torsion. The temperature and amplitude dependences of Q-1 were studied in ˜5·10-5 torr vacuum. The amplitude of alternating vibrations was within the range ˜10-5 10-3 and the axial stresses were ˜106 107 N/m2. The experimental results led to the conclusion that the microplasticity of undeformed silicon whiskers was due to heterogeneous nucleation of dislocations in stress concentration regions near surface defects, assisted by thermal fluctuations. In deformed whiskers the microplasticity was attributed to the nucleation and motion along dislocations of single and double thermal kinks in accordance with the Seeger model.

  3. The Silicon Lattice Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, J


    Previously, the generalized luminosity L was defined and calculated for all incident channels based on an NLC e{sup +}e{sup -} design. Alternatives were then considered to improve the differing beam-beam effects in the e{sup -}e{sup -}, e{gamma} and {gamma}{gamma} channels. One example was tensor beams composed of bunchlets n{sub ijk} implemented with a laser-driven, silicon accelerator based on micromachining techniques. Problems were considered and expressions given for radiative broadening due to bunchlet manipulation near the final focus to optimize luminosity via charge enhancement, neutralization or bunch shaping. Because the results were promising, we explore fully integrated structures that include sources, optics (for both light and particles) and acceleration in a common format--an accelerator-on-chip. Acceptable materials (and wavelengths) must allow velocity synchronism between many laser and electron pulses with optimal efficiency in high radiation environments. There are obvious control and cost advantages that accrue from using silicon structures if radiation effects can be made acceptable and the structures fabricated. Tests related to deep etching, fabrication and radiation effects on candidate amorphous and crystalline materials indicate Si(1.2 < {lambda}{sub L} < 10 {micro}m) and fused c-SiO{sub 2}(0.3 < {lambda}{sub L} < 4 {micro}m) to be ideal.

  4. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Directory of Open Access Journals (Sweden)

    Jiawei eWANG


    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  5. Selective emitter using porous silicon for crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Inyong; Kim, Kyunghae; Kim, Youngkuk; Han, Kyumin; Kyeong, Doheon; Kwon, Taeyoung; Vinh Ai, Dao; Lee, Jeongchul; Yi, Junsin [School of Information and Communication Engineering, Sungkyunkwan University, Chunchun-dong, Jangan-Gu, Suwon-City, Kyunggi-Do 440-746 (Korea); Thamilselvan, M. [School of Information and Communication Engineering, Sungkyunkwan University, Chunchun-dong, Jangan-Gu, Suwon-City, Kyunggi-Do 440-746 (Korea); Government College of Technology, Coimbatore, Tamilnadu (India); Ju, Minkyu; Lee, Kyungsoo [KPE Ins. Chunchun-dong, Jangan-Gu, Suwon-City, Kyunggi-Do 440-746 (Korea)


    This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured emitter sheet resistances at the high- and low-level-doped regions were 30-35 and 97-474 {omega}/{open_square} respectively. A simple process for low- and high-level doping has been achieved by forming porous and porous-free silicon surface, in this study, which could be applied for solar cells selective emitter doping. (author)

  6. Stoichiometry of silicon-rich dielectrics for silicon nanocluster formation

    Energy Technology Data Exchange (ETDEWEB)

    Barreto, Jorge; Morales, Alfredo; Dominguez, Carlos [Centro Nacional de Microelectronica, IMB-CNM (CSIC), Campus UAB, 08193 Cerdanyola del Valles (Spain); Peralvarez, Mariano; Garrido, Blas [EME, Departament d' Electronica, Universitat de Barcelona, 08028 Barcelona (Spain)


    Silicon photonics has been bred by several techniques including Chemical Vapour Deposition (CVD) and ion implantation amongst others in order to synthesize silicon nanoclusters with CMOS-compatible technologies. Most of these techniques end up relying on the formation of nanoclusters through the diffusion and segregation of silicon atoms in a silicon-rich dielectric matrix. In this work we present a parallel analysis on silicon rich dielectric layers obtained by different methods. X-Ray Photoelectron Spectroscopy, ellipsometry and photoluminescence are used to characterize Low Pressure CVD and Plasma Enhanced CVD samples in the same theoretical silicon excess range. The analysis shows that independently on the obtaining method the initial concentration of silicon excess can be used to estimate some properties. The actual binding of the atoms can change as well regardless of their initial quantity. However secondary parameters such as the obtaining temperature and the nitrogen concentration in the layer have to be taken into account. Therefore, experimental parameters such as the flow ratio between reactant gases or the refractive index prove to be insufficient if samples obtained by different methods are compared. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites (United States)

    Corman, Gregory Scot; Luthra, Krishan Lal


    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  8. Lipid membranes on nanostructured silicon.

    Energy Technology Data Exchange (ETDEWEB)

    Slade, Andrea Lynn; Lopez, Gabriel P. (University of New Mexico, Albuquerque, NM); Ista, Linnea K. (University of New Mexico, Albuquerque, NM); O' Brien, Michael J. (University of New Mexico, Albuquerque, NM); Sasaki, Darryl Yoshio; Bisong, Paul (University of New Mexico, Albuquerque, NM); Zeineldin, Reema R. (University of New Mexico, Albuquerque, NM); Last, Julie A.; Brueck, Stephen R. J. (University of New Mexico, Albuquerque, NM)


    A unique composite nanoscale architecture that combines the self-organization and molecular dynamics of lipid membranes with a corrugated nanotextured silicon wafer was prepared and characterized with fluorescence microscopy and scanning probe microscopy. The goal of this project was to understand how such structures can be assembled for supported membrane research and how the interfacial interactions between the solid substrate and the soft, self-assembled material create unique physical and mechanical behavior through the confinement of phases in the membrane. The nanometer scale structure of the silicon wafer was produced through interference lithography followed by anisotropic wet etching. For the present study, a line pattern with 100 nm line widths, 200 nm depth and a pitch of 360 nm pitch was fabricated. Lipid membranes were successfully adsorbed on the structured silicon surface via membrane fusion techniques. The surface topology of the bilayer-Si structure was imaged using in situ tapping mode atomic force microscopy (AFM). The membrane was observed to drape over the silicon structure producing an undulated topology with amplitude of 40 nm that matched the 360 nm pitch of the silicon structure. Fluorescence recovery after photobleaching (FRAP) experiments found that on the microscale those same structures exhibit anisotropic lipid mobility that was coincident with the silicon substructure. The results showed that while the lipid membrane maintains much of its self-assembled structure in the composite architecture, the silicon substructure indeed influences the dynamics of the molecular motion within the membrane.

  9. Silicon force sensor

    Energy Technology Data Exchange (ETDEWEB)

    Galambos, Paul C.; Crenshaw, Thomas B.; Nishida, Erik E.; Burnett, Damon J.; Lantz, Jeffrey W.


    The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

  10. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.


    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...... from 25 N/mm(2) to 0 N/mm(2) at 200 degrees C. A weak dependence on feature size was observed. For bonding temperatures higher than 300 degrees C fracture occurs randomly in the bulk of the silicon, whereas for bonding temperatures lower than 300 degrees C fracture always occurs at the bonding...

  11. Silicon Carbide Nanotube Synthesized (United States)

    Lienhard, Michael A.; Larkin, David J.


    Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

  12. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS


    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI:

  13. Silicon Quantum Dots for Quantum Information Processing (United States)


    16 2.2.2 Si/SiGe Heterostructures . . . . . . . . . . . . . . . . . . . 18 2.2.3 Silicon Nanowires ...Recently, silicon MOS, silicon/silicon- germanium (Si/SiGe) heterostructures and silicon nanowire architectures have also achieved spin manipulation and...Churchill, D. J. Reilly, J. Xiang, C. M. Lieber, and C. M. Marcus. A Ge/Si heterostructure nanowire -based double quantum dot with integrated charge

  14. Solar silicon refining; Inclusions, settling, filtration, wetting


    Ciftja, Arjan


    The main objective of the present work is the removal of inclusions from silicon scrap and metallurgical grade silicon. To reach this goal, two various routes are investigated. First, settling of SiC particles from molten silicon followed by directional solidification is reported in this thesis. Then, removal of SiC and Si3N4 inclusions in silicon scrap by filtration with foam filters and wettabilities of silicon on graphite materials are studied. To supply the increasing needs of the...

  15. Characterization of silicon-silicon carbide ceramic derived from carbon-carbon silicon carbide composites

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Vijay K. [Indian Institute of Technology, Varanasi (India). Dept. of Mechanical Engineering; Krenkel, Walter [Univ. of Bayreuth (Germany). Dept. of Ceramic Materials Engineering


    The main objective of the present work is to process porous silicon - silicon carbide (Si - SiC) ceramic by the oxidation of carboncarbon silicon carbide (C/C - SiC) composites. Phase studies are performed on the oxidized porous composite to examine the changes due to the high temperature oxidation. Further, various characterization techniques are performed on Si- SiC ceramics in order to study the material's microstructure. The effects of various parameters such as fiber alignment (twill weave and short/chopped fiber) and phenolic resin type (resol and novolak) are characterized.

  16. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn


    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern ...

  17. Optical information capacity of silicon

    CERN Document Server

    Dimitropoulos, Dimitris


    Modern computing and data storage systems increasingly rely on parallel architectures where processing and storage load is distributed within a cluster of nodes. The necessity for high-bandwidth data links has made optical communication a critical constituent of modern information systems and silicon the leading platform for creating the necessary optical components. While silicon is arguably the most extensively studied material in history, one of its most important attributes, an analysis of its capacity to carry optical information, has not been reported. The calculation of the information capacity of silicon is complicated by nonlinear losses, phenomena that emerge in optical nanowires as a result of the concentration of optical power in a small geometry. Nonlinear losses are absent in silica glass optical fiber and other common communication channels. While nonlinear loss in silicon is well known, noise and fluctuations that arise from it have never been considered. Here we report sources of fluctuations...

  18. Characterization of Czochralski Silicon Detectors

    CERN Document Server

    Luukka, Panja-Riina


    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alternative for future highenergy physics experiments. In the large hadron collider (LHC), the RH of the detectorsis a critical issue due to the high luminosity (1034 cm-2s-1) corresponding to the expectedtotal fluencies of fast hadrons above 1015 cm-2. This RH improvement is important sinceradiation damage in the detector bulk material reduces the detector performance andbecause some of the devices produced from standard detector-grade silicon, e.g. FZsilicon with negligible oxygen concentration, might not survive the plann...


    Directory of Open Access Journals (Sweden)

    Cornelia LUCA


    Full Text Available The leather confections industry uses the silicone rubber moulds for the symbols,notices and models stamping on the footwear or morocco goods parts. The paper presents somecontributions in this kind of devices manufacturing technology

  20. Silicon Solar Cell Turns 50

    Energy Technology Data Exchange (ETDEWEB)

    Perlin, J.


    This short brochure describes a milestone in solar (or photovoltaic, PV) research-namely, the 50th anniversary of the invention of the first viable silicon solar cell by three researchers at Bell Laboratories.

  1. Ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H. F.-W., E-mail: [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)


    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

  2. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani


    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  3. New applications of silicon micromachining

    Energy Technology Data Exchange (ETDEWEB)

    Lauf, R.J.; Wood, R.F.; Fleming, P.H.; Bauer, M.L.


    The use of photolithography and anisotropic etching of silicon wafers to make strong, thin membranes has created a large family of miniature sensing devices such as pressure transducers and accelerometers. This report describes several entirely new devices in which silicon membranes are used for their strength and for their transparency to certain kinds of radiation. Two applications are described: a rugged alpha detector and a fluid sample cell for small-angle x-ray scattering. 8 refs., 12 figs., 2 tabs.

  4. Topological Order in Silicon Photonics (United States)


    AFRL-AFOSR-VA-TR-2017-0037 Topological orders in Silicon photonics Mohammad Hafezi MARYLAND UNIV COLLEGE PARK 3112 LEE BLDG COLLEGE PARK, MD 20742...15 SEP 2016 4. TITLE AND SUBTITLE Topological Order in Silicon Photonics 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA-9550-14-1-0267 5c. PROGRAM...DISTRIBUTION/AVAILABILITY STATEMENT DISTRIBUTION A: Distribution approved for public release. 13. SUPPLEMENTARY NOTES 14. ABSTRACT Topological features

  5. Silicon Sensors for HEP Experiments

    CERN Document Server

    Dierlamm, Alexander Hermann


    With increasing luminosity of accelerators for experiments in High Energy Physics the demands on the detectors increase as well. Especially tracking and vertexing detectors made of silicon sensors close to the interaction point need to be equipped with more radiation hard devices. This article introduces the different types of silicon sensors, describes measures to increase radiation hardness and provides an overview of present upgrade choices of HEP experiments.

  6. Silicone nanocomposite coatings for fabrics (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)


    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  7. Metallization of Large Silicon Wafers (United States)

    Pryor, R. A.


    A metallization scheme was developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300 C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed.

  8. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.


    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration.......An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  9. Generation and transmission of 3 × 3 W-Band multi-input multi-output orthogonal frequency division multiplexing-radio-over-fiber signals using micro-ring resonators. (United States)

    Alavi, S E; Amiri, I S; Ahmad, H; Supa'at, A S M; Fisal, N


    Using the micro-ring resonator (MRR) system, the single and multi-carriers at frequencies of f(1)=192.898, f(2)=192.990, f(3)=193.1, f(4)=193.315, and f(5)=193.537  THz with a free spectral range (FSR) of 92, 110, 215, and 222 GHz, respectively, are generated to be suitable for a radio-over-fiber (RoF) system based on multi-input multi-output (MIMO) with orthogonal frequency division multiplexing (OFDM). Demonstrated are the concepts of all-optical MIMO signal generation and its transmission over a 50 km single mode fiber (SMF) optical link and an up to 3 m wireless link. Sixty-four multi-carriers are used in the all-optical generation of three MIMO W-Band RF signals, where the single carriers (f(3)-f(5)) transport the signals over the RoF link. The bit error rate (BER) of the overall system performance is discussed; thus, the transmission of MIMO signals is feasible for up to an SMF path 50 km long and a wireless distance of 3 m.

  10. Annealing of silicon optical fibers (United States)

    Gupta, N.; McMillen, C.; Singh, R.; Podila, R.; Rao, A. M.; Hawkins, T.; Foy, P.; Morris, S.; Rice, R.; Poole, K. F.; Zhu, L.; Ballato, J.


    The recent realization of silicon core optical fibers has the potential for novel low insertion loss rack-to-rack optical interconnects and a number of other uses in sensing and biomedical applications. To the best of our knowledge, incoherent light source based rapid photothermal processing (RPP) was used for the first time to anneal glass-clad silicon core optical fibers. X-ray diffraction examination of the silicon core showed a considerable enhancement in the length and amount of single crystallinity post-annealing. Further, shifts in the Raman frequency of the silicon in the optical fiber core that were present in the as-drawn fibers were removed following the RPP treatment. Such results indicate that the RPP treatment increases the local crystallinity and therefore assists in the reduction of the local stresses in the core, leading to more homogenous fibers. The dark current-voltage characteristics of annealed silicon optical fiber diodes showed lower leakage current than the diodes based on as-drawn fibers. Photons in UV and vacuum ultraviolet (VUV) regions play a very important role in improving the bulk and carrier transport properties of RPP-treated silicon optical fibers, and the resultant annealing permits a path forward to in situ enhancement of the structure and properties of these new crystalline core optical fibers.

  11. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon


    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  12. Silicon Photomultiplier charaterization (United States)

    Munoz, Leonel; Osornio, Leo; Para, Adam


    Silicon Photo Multiples (SiPM's) are relatively new photon detectors. They offer many advantages compared to photo multiplier tubes (PMT's) such as insensitivity to magnetic field, robustness at varying lighting levels, and low cost. The SiPM output wave forms are poorly understood. The experiment conducted collected waveforms of responses of Hamamatsu SiPM to incident laser pulse at varying temperatures and bias voltages. Ambient noise was characterized at all temperatures and bias voltages by averaging the waveforms. Pulse shape of the SiPM response was determined under different operating conditions: the pulse shape is nearly independent of the bias voltage but exhibits strong variation with temperature, consistent with the temperature variation of the quenching resistor. Amplitude of responses of the SiPM to low intensity laser light shows many peaks corresponding to the detection of 1,2,3 etc. photons. Amplitude of these pulses depends linearly on the bias voltage, enabling determination of the breakdown voltage at each temperature. Poisson statistics has been used to determine the average number of detected photons at each operating conditions. Department of Education Grant No. P0315090007 and the Department of Energy/ Fermi National Accelerator Laboratory.

  13. Silicon Carbide Growth (United States)


    Andrew Trunek has focused on supporting the Sic team through the growth of Sic crystals, making observations and conducting research that meets the collective needs and requirements of the team while fulfilling program commitments. Cancellation of the Ultra Efficient Engine Technology (UEET) program has had a significant negative impact on resources and research goals. This report highlights advancements and achievements made with this cooperative agreement over the past year. NASA Glenn Research Center (GRC) continues to make advances in silicon carbide (SiC) research during the past year. Step free surfaces were used as substrates for the deposition of GaN epilayers that yielded very low dislocation densities. Defect free 3C- SiC was successfully nucleated on step free mesas and test diodes were fabricated. Web growth techniques were used to increase the usable surface area of dislocation free SiC by approximately equal to 40%. The greatest advancement has been attained on stepped surfaces of SiC. A metrology standard was developed using high temperature etching techniques titled "Nanometer Step Height Standard". This development culminated in being recognized for a 2004 R&D100 award and the process to produce the steps received a NASA Space Act award.

  14. Collimation: a silicon solution

    CERN Multimedia


    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  15. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift


    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  16. Diseño, desarrollo y construcción de una micro-red de 5 KVA con cargas dinámicas y desequilibrios programables. Parte II: Accionamiento dinámico regulable y red de distribución


    Martín Montero, Álvaro


    El presente Trabajo Fin de Grado versa sobre el diseño, desarrollo y construcción de una micro-red de 5 KVA con un sistema de gestión, regulación y control a través de una unidad centralizada en un PC, de forma que sea posible variar la demanda de potencia a la vez que se generan desequilibrios. El equipo completo está formado por tres sistemas: -Sistema de demanda: Puede modificar el consumo de potencia de forma dinámica e introducir desequilibrios y distorsión armónica. Para ello disp...

  17. Silicon nitride passivated bifacial Cz-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Janssen, L. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Solland Solar Cells GmbH, Bohr 12, 52072 Aachen (Germany); Windgassen, H.; Baetzner, D.L. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Bitnar, B.; Neuhaus, H. [Deutsche Cell GmbH, Berthelsdorfer Str. 111a, 09599 Freiberg (Germany)


    A new process for all silicon nitride passivated silicon solar cells with screen printed contacts is analysed in detail. Since the contacts are fired through the silicon nitride layers on both sides, the process is easy to adapt to industrial production. The potential and limits of the presented bifacial design are simulated and discussed. The effectiveness of the presented process depends strongly on the base doping of the substrate, but only the open circuit voltage is affected. The current is mainly determined by the rear surface passivation properties. Thus, using a low resistivity (<1.5{omega}cm) base material higher efficiencies compared to an aluminium back surface field can be achieved. (author)

  18. Silicon nitride equation of state (United States)

    Brown, Robert C.; Swaminathan, Pazhayannur K.


    This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

  19. Nanocrystalline silicon in biological studies

    Energy Technology Data Exchange (ETDEWEB)

    Fucikova, Anna [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16, Prague 2 (Czech Republic); Institute of Physics AS CR, v. v. i., Cukrovarnicka 10, 162 53 Prague 6 (Czech Republic); Valenta, Jan [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16, Prague 2 (Czech Republic); Pelant, Ivan; Kusova, Katerina [Institute of Physics AS CR, v. v. i., Cukrovarnicka 10, 162 53 Prague 6 (Czech Republic); Brezina, Vitezslav [Institute of Systems Biology and Ecology AS CR, v. v. i., Zamek 136, 373 33 Nove Hrady (Czech Republic)


    Porous silicon and similar materials, like micro- and nanocrystalline silicon, are nowadays studied not only in physical research (e.g. optical gain studies, electro-optical devices, solar energy conversion), but they are very promising also in biological research as fluorescent labels, biological sensors, drug delivery systems or scaffold for various tissues. We are giving an overview of various approaches of preparation of micro- and nanocrystalline silicon and current studies of applications with main focus on biology and medicine. In contrast to other nanomaterials used in biological studies (e.g. carbon nanotubes, fullerenes, cadmium containing quantum dots) silicon based nanomaterials show very good biocompatibility and low cytotoxicity. Therefore, these materials have potential to become powerful tools for in vivo investigation of life processes on subcellular and molecular level. Our group concentrates on developing of gentle fluorescent label based on porous silicon for single molecule detection in the cell. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Tin oxide - silicon dioxide - silicon MIS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Llabres, K.; Dominguez, E.; Lora-Tamayo, E.; Arjona, F.


    The results obtained in tin oxide-silicon dioxide-n type silicon Schottky barrier solar cells are presented. Samples were prepared in a two-zone furnace where the thermal oxidation of the wafer and the SnO/sub 2/ deposition were carried out without further handling. The tin oxide layer was grown using a gas transport method in an open tube. The characteristic parameters of the solar cell performance gave the following results: short circuit current density.21 mA/cm/sup 2/, open circuit voltage.550 mV. 7 refs.

  1. Devices and architectures for large-scale integrated silicon photonics circuits (United States)

    Beausoleil, Raymond G.; Faraon, Andrei; Fattal, David; Fiorentino, Marco; Peng, Zhen; Santori, Charles


    We present DWDM nanophotonics architectures based on microring resonator modulators and detectors. We focus on two implementations: an on chip interconnect for multicore processor (Corona) and a high radix network switch (HyperX). Based on the requirements of these applications we discuss the key constraints on the photonic circuits' devices and fabrication techniques as well as strategies to improve their performance.

  2. Silicon Nitride Bearings for Total Joint Arthroplasty

    National Research Council Canada - National Science Library

    McEntire, Bryan; Lakshminarayanan, Ramaswamy; Ray, Darin; Clarke, Ian; Puppulin, Leonardo; Pezzotti, Giuseppe


      The articulation performance of silicon nitride against conventional and highly cross-linked polyethylene, as well as for self-mated silicon nitride bearings, was examined in a series of standard hip simulation studies...

  3. The LHCb silicon tracker project

    CERN Document Server

    Blouw, J


    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(IT) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry.


    Directory of Open Access Journals (Sweden)

    André Alexandrino Lotto


    Full Text Available This work aims to investigate the phosphorus removal by vacuum from metallurgical grade silicon (MGSi (98.5% to 99% Si. Melting experiments were carried out in a vacuum induction furnace, varying parameters such as temperature, time and relation area exposed to the vacuum / volume of molten silicon. The results of chemical analysis were obtained by inductively coupled plasma (ICP, and evaluated based on thermodynamic and kinetic aspects of the reaction of vaporization of the phosphorus in the silicon. The phosphorus was decreased from 33 to approximately 1.5 ppm after three hours of vacuum treatment, concluding that the evaporation step is the controlling step of the process for parameters of temperature, pressure and agitation used and refining by this process is technically feasible.

  5. A silicon tracker for Christmas

    CERN Multimedia


    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  6. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL


    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  7. Energy Harvesting from Energetic Porous Silicon (United States)


    wafers backed with platinum are patterned into 2- mm devices with bridge wires (Fig. 1 [left]). Using a silicon nitride layer as a mask, the silicon is...ARL-TR-7719 ● JULY 2016 US Army Research Laboratory Energy Harvesting from Energetic Porous Silicon by Louis B Levine, Matthew...Harvesting from Energetic Porous Silicon by Louis B Levine Academy of Applied Science, Concord, NH Matthew H Ervin and Wayne A Churaman Sensors and

  8. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.


    Silicon Photonics Cloud ( is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud ( is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  9. Silicon nanocrystal inks, films, and methods (United States)

    Wheeler, Lance Michael; Kortshagen, Uwe Richard


    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  10. Silicon sources for rice crop

    Directory of Open Access Journals (Sweden)

    Pereira Hamilton Seron


    Full Text Available Although silicon is not an essential nutrient, its application is beneficial for plant growth and development. To evaluate silicon sources in relation to agronomic efficiency and economic viability in rice crops (Oryza sativa L., a greenhouse experiment was conducted, Quartzipsamment soil, in a completely randomized experimental design (n = 4. Treatments were 12 silicon sources and a control. Silicon was applied at the rate of 125 kg Si ha-1. Data were compared to a standard response curve for Si using the standard source Wollastonite at rates of 0, 125, 250, 375, and 500 kg Si ha-1. All treatments received CaCO3 and MgCO3 to balance pH, Ca and Mg. One hundred and fifty days after sowing, evaluations on dry matter yield in the above-ground part of plants, grain yield, and Si contents in the soil and plant tissues were performed. Wollastonite had linear response, increasing silicon in the soil and plants with increasing application rates. Differences between silicon sources in relation to Si uptake were observed. Phosphate slag provided the highest Si uptake, followed by Wollastonite and electric furnace silicates which however, did not show differed among themselves. The highest Si accumulation in grain was observed for stainless steel, which significantly differed from the control, silicate clay, Wollastonite, and AF2 (blast furnace of the company 2 slag. Silicate clay showed the lowest Si accumulation in grain and did not differ from the control, AF2 slag, AF1 slag, schist ash, schist, and LD4 (furnace steel type LD of the company 4 slag.

  11. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell


    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  12. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform. (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali


    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  13. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann


    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  14. Microdefects in cast multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, E.; Klinger, D.; Bergmann, S. [Inst. of Crystal Growth Berlin (Germany)


    The microdefect etching behavior of cast multicrystalline BAYSIX and SILSO samples is mainly the same as that of EFG silicon, in spite of the very different growth parameters applied to these two techniques and the different carbon contents of the investigated materials. Intentional decorating of mc silicon with copper, iron and gold did not influence the results of etching and with help of infrared transmission microscopy no metal precipitates at the assumed microdefects could be established. There are many open questions concerning the origin of the assumed, not yet doubtless proved microdefects.

  15. Advancements in silicon web technology (United States)

    Hopkins, R. H.; Easoz, J.; Mchugh, J. P.; Piotrowski, P.; Hundal, R.


    Low defect density silicon web crystals up to 7 cm wide are produced from systems whose thermal environments are designed for low stress conditions using computer techniques. During growth, the average silicon melt temperature, the lateral melt temperature distribution, and the melt level are each controlled by digital closed loop systems to maintain thermal steady state and to minimize the labor content of the process. Web solar cell efficiencies of 17.2 pct AM1 have been obtained in the laboratory while 15 pct efficiencies are common in pilot production.

  16. A silicon microstrip gas chamber

    Energy Technology Data Exchange (ETDEWEB)

    Van der Marel, J. (Radiation Technology Group, Faculty of Applied Physics, Delft Univ. of Tech. (Netherlands)); Van den Bogaard, A. (Delft Inst. of Microelectronics and Submicrotechnology, Delft Univ. of Tech. (Netherlands)); Van Eijk, C.W.E. (Radiation Technology Group, Faculty of Applied Physics, Delft Univ. of Tech. (Netherlands)); Hollander, R.W. (Radiation Technology Group, Faculty of Applied Physics, Delft Univ. of Tech. (Netherlands)); Okx, W.J.C. (Radiation Technology Group, Faculty of Applied Physics, Delft Univ. of Tech. (Netherlands)); Sarro, P.M. (Delft Inst. of Microelectronics and Submicrotechnology, Delft Univ. of Tech. (Netherlands))


    We are manufacturing microstrip gas chambers (MSGC) on silicon with an insulating SiO[sub 2] layer. To study the effect of the sheet resistance of the SiO[sub 2] on the operation of the detector several processes to modify the SiO[sub 2] layer have been investigated: ion implantation, boron and phosphorus diffusion, phosphosilicate glass evaporation and polycrystalline silicon deposition. The dependence of the gas gain on the potentials of the different electrodes and the long term stability have been studied. ((orig.))

  17. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo


    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  18. Radiation effects in bulk silicon (United States)

    Claeys, Cor; Vanhellemont, Jan


    This paper highlights important aspects related to irradiation effects in bulk silicon. Some basic principles related to the interaction of radiation with material, i.e. ionization and atomic displacement, are briefly reviewed. A physical understanding of radiation effects strongly depends on the availability of appropriate analytical tools. These tools are critically accessed from a silicon bulk viewpoint. More detailed information, related to the properties of the bulk damage and some dedicated application aspects, is given for both electron and proton irradiations. Emphasis is placed on radiation environments encountered during space missions and on their influence on the electrical performance of devices such as memories and image sensors.

  19. Silicon Nano-Photonic Devices

    DEFF Research Database (Denmark)

    Pu, Minhao

    to microwave systems and biosensing devices. An ultra-low loss inverse taper coupler for interfacing silicon ridge waveguides and optical bers is introduced and insertion losses of less than 1 dB are achieved for both transverse-electric (TE) and transversemagnetic (TM) polarizations. Integrated...... with the couplers, a silicon ridge waveguide is utilized in nonlinear all-optical signal processing for optical time division multiplexing (OTDM) systems. Record ultra-highspeed error-free optical demultiplexing and waveform sampling are realized and demonstrated for the rst time. Microwave phase shifters and notch...

  20. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.


    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  1. MITLL Silicon Integrated Photonics Process: Design Guide (United States)


    MIT Lincoln Laboratory Silicon Integrated Photonics Process Design Guide Revision 2015:1a (31 July 2015) Comprehensive Design...Government. Rev.: 2015:1a (18 June 2015) i MITLL Silicon Integrated Photonics Process Comprehensive Design Guide ... Silicon Integrated Photonics Process Comprehensive Design Guide 16  Deep Etch for Fiber Coupling (DEEP_ETCH

  2. Silicon vertex detector for superheavy elements identification

    Directory of Open Access Journals (Sweden)

    Bednarek A.


    Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

  3. Engineering piezoresistivity using biaxially strained silicon

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Richter, Jacob; Brandbyge, Mads


    of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the iezoresistivity...

  4. ePIXfab - The silicon photonics platform

    NARCIS (Netherlands)

    Khanna, A.; Drissi, Y.; Dumon, P.; Baets, R.; Absil, P.; Pozo Torres, J.M.; Lo Cascio, D.M.R.; Fournier, M.; Fedeli, J.M.; Fulbert, L.; Zimmermann, L.; Tillack, B.; Aalto, T.; O'Brien, P.; Deptuck, D.; Xu, J.; Gale, D.


    ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training

  5. 21 CFR 573.940 - Silicon dioxide. (United States)


    ... 21 Food and Drugs 6 2010-04-01 2010-04-01 false Silicon dioxide. 573.940 Section 573.940 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS... Listing § 573.940 Silicon dioxide. The food additive silicon dioxide may be safely used in animal feed in...

  6. Analysis of silicon transporters in turfgrass species (United States)

    Silicon is an abundant element on earth and is also known to be beneficial as an amendment in some crops such as rice. Despite its abundance in many soils, accumulation of silicon in plants is species-specific and can be widely different. It has been shown that the genes responsible for silicon upta...

  7. 21 CFR 172.480 - Silicon dioxide. (United States)


    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Silicon dioxide. 172.480 Section 172.480 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) FOOD FOR HUMAN... Agents § 172.480 Silicon dioxide. The food additive silicon dioxide may be safely used in food in...

  8. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Scheeper, P.R.; Voorthuyzen, J.A.; Voorthuyzen, J.A.; Bergveld, Piet


    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile

  9. Aquaporins Mediate Silicon Transport in Humans. (United States)

    Garneau, Alexandre P; Carpentier, Gabriel A; Marcoux, Andrée-Anne; Frenette-Cotton, Rachelle; Simard, Charles F; Rémus-Borel, Wilfried; Caron, Luc; Jacob-Wagner, Mariève; Noël, Micheline; Powell, Jonathan J; Bélanger, Richard; Côté, François; Isenring, Paul


    In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1), a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1) the kinetics of substrate transport, 2) their presence in tissues where silicon is presumed to play key roles and 3) their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

  10. 77 FR 20649 - Silicon Metal From China (United States)


    ... COMMISSION Silicon Metal From China Determination On the basis of the record \\1\\ developed in the subject... order on silicon metal from China would be likely to lead to continuation or recurrence of material... Publication 4312 (March 2012), entitled Silicon Metal from China: Investigation No. 731-TA-472 (Third Review...

  11. Aquaporins Mediate Silicon Transport in Humans.

    Directory of Open Access Journals (Sweden)

    Alexandre P Garneau

    Full Text Available In animals, silicon is an abundant and differentially distributed trace element that is believed to play important biological functions. One would thus expect silicon concentrations in body fluids to be regulated by silicon transporters at the surface of many cell types. Curiously, however, and even though they exist in plants and algae, no such transporters have been identified to date in vertebrates. Here, we show for the first time that the human aquaglyceroporins, i.e., AQP3, AQP7, AQP9 and AQP10 can act as silicon transporters in both Xenopus laevis oocytes and HEK-293 cells. In particular, heterologously expressed AQP7, AQP9 and AQP10 are all able to induce robust, saturable, phloretin-sensitive silicon transport activity in the range that was observed for low silicon rice 1 (lsi1, a silicon transporter in plant. Furthermore, we show that the aquaglyceroporins appear as relevant silicon permeation pathways in both mice and humans based on 1 the kinetics of substrate transport, 2 their presence in tissues where silicon is presumed to play key roles and 3 their transcriptional responses to changes in dietary silicon. Taken together, our data provide new evidence that silicon is a potentially important biological element in animals and that its body distribution is regulated. They should open up original areas of investigations aimed at deciphering the true physiological role of silicon in vertebrates.

  12. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans


    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  13. Silicon carbide as platform for energy applications

    DEFF Research Database (Denmark)

    Syväjärvi, Mikael; Jokubavicius, Valdas; Sun, Jianwu

    Silicon carbide is emerging as a novel material for a range of energy and environmental technologies. Previously, silicon carbide was considered as a material mainly for transistor applications. We have initiated the use of silicon carbide material towards optoelectronics in general lighting and ...

  14. 1366 Project Silicon: Reclaiming US Silicon PV Leadership

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Adam [1366 Technologies, Bedford, MA (United States)


    1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

  15. Silicon nanocrystals and defect states in silicon rich silicon nitride for optoelectronic applications (United States)

    Mohammed, Shakil

    Research interest in silicon nanocrystals (Si-NC) has increased significantly as a result of the desire to improve the light emission efficiency of bulk silicon. Si-NCs embedded in silicon nitride have desirable characteristics for optoelectronic applications since they can increase the tunneling probability and have a lower tunneling barrier than silicon oxide. Higher tunneling probability is an important feature as it can be used to develop more efficient electroluminescent and photovoltaic devices. In this dissertation, the Si-rich Si3N 4 (SRN) was prepared using low pressure chemical vapor deposition (LPCVD) and RF sputtering followed by high temperature treatment in order to precipitate Si-NCs within the silicon nitride matrix. Several different characterization techniques were used on the Si-NC samples in order to understand the physical, structural, optical and electrical behavior of the nanocrystals. Characterization techniques used in this analysis included photoluminescence (PL), time resolved PL, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy, ellipsometry and capacitance-voltage (C-V) measurements. Silicon nitride was found to contain a high defect density which suppressed the PL effect from the Si-NC. The PL observed from each different SRN sample correlated to defect states, namely dangling bonds and oxygen related bonding. Although substantial evidence suggested that Si-NC had formed within the SRN sample, a PL effect due to the quantum confinement effect (QCE) from the nanocrystals could not be detected. However, Si rich SiOx samples exhibited excellent PL which correlated with the QCE for an indirect bandgap semiconductor. Further experiments were conducted using forming gas in order to passivate the defects in the SRN. Though significant changes in PL was not achieved due to passivation, the electrical behavior from the SRN indicated that the

  16. Silicon carbide fibers and articles including same (United States)

    Garnier, John E; Griffith, George W


    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately C. to approximately C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  17. Methods for producing silicon carbide fibers (United States)

    Garnier, John E.; Griffith, George W.


    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately C. to approximately C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  18. Solar silicon via the Dow Corning process (United States)

    Hunt, L. P.; Dosaj, V. D.


    Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

  19. Intraventricular Silicone Oil: A Case Report. (United States)

    Mathis, Stéphane; Boissonnot, Michèle; Tasu, Jean-Pierre; Simonet, Charles; Ciron, Jonathan; Neau, Jean-Philippe


    Intracranial silicone oil is a rare complication of intraocular endotamponade with silicone oil. We describe a case of intraventricular silicone oil fortuitously observed 38 months after an intraocular tamponade for a complicated retinal detachment in an 82 year-old woman admitted in the Department of Neurology for a stroke. We confirm the migration of silicone oil along the optic nerve. We discuss this rare entity with a review of the few other cases reported in the medical literature. Intraventricular migration of silicone oil after intraocular endotamponade is usually asymptomatic but have to be known of the neurologists and the radiologists because of its differential diagnosis that are intraventricular hemorrhage and tumor.

  20. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)


    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  1. Silicon on insulator self-aligned transistors (United States)

    McCarthy, Anthony M.


    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  2. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa


    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  3. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers


    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  4. Aleph silicon microstrip vertex detector

    CERN Multimedia

    Laurent Guiraud


    This microstrip vertex locator was located at the heart of the ALEPH experiment, one of the four experiments at the Large Electron-Positron (LEP) collider. In the experiments at CERN's LEP, which ran from 1989 to 2000, modern silicon microvertex detectors, such as those used at ALEPH, monitored the production of short-lived particles close to the beam pipe.

  5. Magnetically retained silicone facial prosthesis

    African Journals Online (AJOL)

    straps, spectacle frames, extension from the denture, magnets, adhesives and implants material.[4] In this case report using maxillofacial silicone material and magnets, the prosthesis was constructed to camouflage the facial defect more esthetically. Case Report. A 67‑year‑old male patient was referred to the department.

  6. Magnetically retained silicone facial prosthesis

    African Journals Online (AJOL)

    Key words: Magnet retention, oro cutaneous fistula, silicone maxillofacial prosthesis. Date of Acceptance: 09-Jun-2013. Address for correspondence: Dr. Suresh Venugopalan, Department of Prosthodontics,. Saveetha Dental College, Ponamalle High Road,. Chennai ‑ 600 077, Tamil Nadu, India. E‑mail: ...

  7. Behavior of dislocations in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sumino, Koji [Nippon Steel Corp., Chiba Prefecture (Japan)


    A review is given of dynamic behavior of dislocations in silicon on the basis of works of the author`s group. Topics taken up are generation, motion and multiplication of dislocations as affected by oxygen impurities and immobilization of dislocations due to impurity reaction.

  8. Seedless electroplating on patterned silicon

    NARCIS (Netherlands)

    Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt


    Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate

  9. Silicon nitride microwave photonic circuits

    NARCIS (Netherlands)

    Roeloffzen, C.G.H.; Zhuang, L.; Taddei, Caterina; Taddei, Caterina; Leinse, Arne; Heideman, Rene; van Dijk, Paulus W.L.; Oldenbeuving, Ruud; Marpaung, D.A.I.; Burla, M.; Buria, Maurizio; Boller, Klaus J.


    We present an overview of several microwave photonic processing functionalities based on combinations of Mach-Zehnder and ring resonator filters using the high index contrast silicon nitride (TriPleXTM) waveguide technology. All functionalities are built using the same basic building blocks, namely

  10. Theory of unsaturated silicon lattices (United States)

    Zhang, Feng; Stucke, David; Stojkovic, Dragan; Crespi, Vincent


    Several molecules are known to contain stable silicon double or triple bonds that are sterically protected by bulky side groups. Through first-principles computation, we demonstrate that well-defined π bonds can also be formed in two prototypical crystalline Si structures: Schwarzite Si-168 and dilated diamond. The sp^2-bonded Si-168 is thermodynamically preferred over diamond silicon at a modest negative pressure of -2.5 GPa. Ab-initio molecular dynamics simulations of Si-168 at 1000 K reveal significant thermal stability. Si-168 is metallic in density functional theory, but with distinct π-like and &*circ;-like valence and conduction band complexes just above and below the Fermi energy. A bandgap buried in the valence band but close to the Fermi level can be accessed via hole doping in semiconducting Si144B24. A less-stable crystalline system with a silicon-silicon triple bond is also examined: a rare-gas intercalated open framework on a dilated diamond lattice.

  11. Mesoporous Silicon-Based Anodes (United States)

    Peramunage, Dharmasena


    For high-capacity, high-performance lithium-ion batteries. A new high-capacity anode composite based on mesoporous silicon is being developed. With a structure that resembles a pseudo one-dimensional phase, the active anode material will accommodate significant volume changes expected upon alloying and dealloying with lithium (Li).

  12. Let’s talk silicon (United States)

    While silicon (Si) has been a known plant nutrient for centuries, how plants use this element is still poorly understood. Researchers have identified how plants acquire Si from the environment and transport the element to all plant tissues, including roots, stems, petioles, leaves and flowers. We ...

  13. Pathology of silicon carbide pneumoconiosis. (United States)

    Massé, S; Bégin, R; Cantin, A


    Silicon carbide is a widely used synthetic abrasive manufactured by heating silica and coke in electric furnaces at 2400 degrees C. Until recently it had been considered a relatively inert dust in humans and animals. However, several roentgenologic surveys had revealed lesions similar to low-grade silicosis. A recent epidemiological study has revealed a 35% incidence of pulmonary problems. Tissues from three such workers were available for light microscopy. A mixed pneumoconiosis was found, and lesions can be summarized as follows: (a) abundance of intraalveolar macrophages associated with a mixture of inhaled particles including carbon, silicon, pleomorphic crystals, silicon carbide, and ferruginous bodies showing a thin black central core; (b) nodular fibrosis, generally profuse, containing silica and ferruginous bodies and associated with large amount of carbon pigment; (c) interstitial fibrosis, less prominent than the nodular form; (d) carcinoma in two cases. We believe this pneumoconiosis is sufficiently characteristic to be recognized as a distinct entity. The Stanton hypothesis on fiber properties and carcinogenesis could be applied to silicon carbide dust. At present, it appears that the occupational hazard is limited to the manufacturing process and powdered product used in some industries.

  14. Microelectromechanical pump utilizing porous silicon (United States)

    Lantz, Jeffrey W [Albuquerque, NM; Stalford, Harold L [Norman, OK


    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  15. Untreated silicone breast implant rupture. (United States)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten; Sletting, Susanne; Høier-Madsen, Mimi; Fryzek, Jon P; McLaughlin, Joseph K; Kjøller, Kim; Wiik, Allan; Friis, Søren


    Implant rupture is a well-known complication of breast implant surgery that can pass unnoticed by both patient and physician. To date, no prospective study has addressed the possible health implications of silicone breast implant rupture. The aim of the present study was to evaluate whether untreated ruptures are associated with changes over time in magnetic resonance imaging findings, serologic markers, or self-reported breast symptoms. A baseline magnetic resonance imaging examination was performed in 1999 on 271 women who were randomly chosen from a larger cohort of women having cosmetic breast implants for a median period of 12 years (range, 3 to 25 years). A follow-up magnetic resonance imaging examination was carried out in 2001, excluding women who underwent explantation in the period between the two magnetic resonance imaging examinations (n = 44). On the basis of these examinations, the authors identified 64 women who had at least one ruptured implant at the first magnetic resonance imaging examination and, for comparison, all women who had intact implants at both examinations (n = 98). Magnetic resonance images from the two examinations were compared and changes in rupture configuration were evaluated. Comparisons were also made for self-reported breast symptoms occurring during the study period and for changes in serum values of antinuclear antibodies, rheumatoid factor, and cardiolipin antibodies immunoglobulin G and immunoglobulin M. The majority of the women with implant rupture had no visible magnetic resonance imaging changes of their ruptured implants. For 11 implants (11 percent) in 10 women, the authors observed progression of silicone seepage, either as a conversion from intracapsular into extracapsular rupture (n = 7), as progression of extra-capsular silicone (n = 3), or as increasing herniation of the silicone within the fibrous capsule (n = 1); however, in most cases, these changes were minor. Some changes could be ascribed to trauma, but

  16. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.


    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  17. Aluminum gettering in single and multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    McHugo, S.A.; Hieslmair, H.; Weber, E.R. [Univ. of California, Berkeley, CA (United States)


    Al gettering has been performed on integrated circuit (I.C.) quality silicon and a variety of single and multicrystalline silicon solar cell materials. The minority carrier diffusion length, Ln, has been used to quantify the gettering response. Vast differences in response to the Al gettering treatment are observed between the I.C. quality silicon and the solar cell materials. The I.C. silicon generally responds well while the solar cell silicon performance progressively degrades with increasing gettering temperature. Preliminary data shows that by performing a Rapid Thermal Annealing treatment prior to the Al gettering, an improved or further degraded Ln emerges in solar cell material depending on the material`s manufacturer. We explain these observed phenomena by suggesting that Al gettering in solar cell silicon is an impurity emission-limited process while for I.C. quality silicon it is diffusion limited.

  18. Recent progress and patents in silicon nanotubes. (United States)

    Pei, Li Z; Wang, Shang B; Fan, Chuan G


    Silicon nanotubes, as a novel kind of silicon nanomaterials, exhibit good application prospect in lithium ion battery, field effect transistors, magnetic nanodevices, hydrogen storage, nanoscale electron and field emitting devices. This article reviews the recent progress and patents in silicon nanotubes. The progress and corresponding patents for the synthesis of silicon nanotubes using different templates, hydrothermal method, electrochemical deposition, plasma method and laser ablation method are demonstrated. The experimental application and patents of silicon nanotubes as field effect transistors and lithium ion battery are discussed. The application potential of silicon nanotubes in magnetic devices, hydrogen storage, nanoscale electron and field-emitting devices is demonstrated. Finally, the future development of silicon nanotubes for the synthesis and practice application is also discussed.

  19. Silicon-Based Anode and Method for Manufacturing the Same (United States)

    Yushin, Gleb Nikolayevich (Inventor); Luzinov, Igor (Inventor); Zdyrko, Bogdan (Inventor); Magasinski, Alexandre (Inventor)


    A silicon-based anode comprising silicon, a carbon coating that coats the surface of the silicon, a polyvinyl acid that binds to at least a portion of the silicon, and vinylene carbonate that seals the interface between the silicon and the polyvinyl acid. Because of its properties, polyvinyl acid binders offer improved anode stability, tunable properties, and many other attractive attributes for silicon-based anodes, which enable the anode to withstand silicon cycles of expansion and contraction during charging and discharging.

  20. National solar technology roadmap: Film-silicon PV

    Energy Technology Data Exchange (ETDEWEB)

    Keyes, Brian [National Renewable Energy Lab. (NREL), Golden, CO (United States)


    Silicon photovoltaic (PV) technologies are addressed in two different technology roadmaps: Film-Silicon PV and Wafer-Silicon PV. This Film-Silicon PV roadmap applies to all silicon-film technologies that rely on a supporting substrate such as glass, polymer, aluminum, stainless steel, or metallurgical-grade silicon. Such devices typically use amorphous, nanocrystalline, fine-grained polycrystalline, or epitaxial silicon layers that are 1–20 μm thick.

  1. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui


    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  2. Debug automation from pre-silicon to post-silicon

    CERN Document Server

    Dehbashi, Mehdi


    This book describes automated debugging approaches for the bugs and the faults which appear in different abstraction levels of a hardware system. The authors employ a transaction-based debug approach to systems at the transaction-level, asserting the correct relation of transactions. The automated debug approach for design bugs finds the potential fault candidates at RTL and gate-level of a circuit. Debug techniques for logic bugs and synchronization bugs are demonstrated, enabling readers to localize the most difficult bugs. Debug automation for electrical faults (delay faults)finds the potentially failing speedpaths in a circuit at gate-level. The various debug approaches described achieve high diagnosis accuracy and reduce the debugging time, shortening the IC development cycle and increasing the productivity of designers. Describes a unified framework for debug automation used at both pre-silicon and post-silicon stages; Provides approaches for debug automation of a hardware system at different levels of ...

  3. Reactive magnetron sputtering of silicon to produce silicon oxide (United States)

    Howson, R. P.; Danson, N.; Hall, G. W.


    Well controlled silicon dioxide films with refractive index 1.400-1.490 have been deposited at rates of up to 0.85 nm/s from a 100 mm diameter polycrystalline silicon cathode, sputtered at 200 W of 40 kHz rectified AC power in a reactive environment. This frequency used with control of the partial pressure of the oxygen in the system from the cathode potential has demonstrated an ability to reactively sputter silicon oxide of high quality. Stress/stoichiometry curves showed a peak in stress at a refractive index of 1.460 indicating both a dense structure and optimised SiO 2. We have demonstrated a pulsing system for the admission of oxygen into the silicon sputtering system which is under the control of a signal derived from the voltage appearing on the cathode when sputtering at constant power. Such a signal indicates the sputtering status of the target as to the degree to which the cathode is covered with oxide i.e. poisoned. By varying combinations of reactive gas flow rate and switching levels, different film compositions could be reproducibly and reliably obtained. The growing films could be subjected to a externally-varied degree of argon-ion bombardment with a simple modification of the geometry of the unbalanced magnetron used for the sputtering. The amount of ion bombardment with such a system was also a function of the argon sputtering pressure that was used. Increased argon-ion bombardment resulted in more compressive stress in the film that was produced.

  4. A general classification of silicon utilizing organisms (United States)

    Das, P.; Das, S.


    Silicon utilizing organisms may be defined as organisms with high silicon content (≥ 1% dry weight) and they can metabolize silicon with or without demonstrable silicon transporter genes (SIT) in them(Das,2010). Silicon is the second most abundant element in the lithosphere (27.70%) and it is as important as phosphorus and magnesium (0.03%) in the biota. Hydrated silica represents the second most abundant biogenic mineral after carbonate minerals. Silicon is accumulated and metabolized by some prokaryotes, and Si compounds can stimulate the growth of a range of fungi. It is well known that Si is essential for diatoms. In mammals, Si is considered an essential trace element, required in bone, cartilage and connective tissue formation, enzymatic activities and other metabolic processes. Silicon was suggested to act as a phosphoprotein effector in bone. In mammals, Si is also reported to positively influence the immune system and to be required for lymphocyte proliferation. The aqueous chemistry of Si is dominated by silicic acid at biological pH ranges. Monosilicic acid can form stable complexes with organic hydroxy-containing molecules . Biosilica also has been identified associated with various biomolecules including proteins and carbohydrates. There are main seven groups of silicon utilizing organisms belonging to Gram positive bacteria, algae, protozoa, sponges, fungi, lichens, and monocotyledon plants. In each group again all the members are not silicon utilizing organisms, thus selective members in each group are further classified depending their degree of silicon utilization. Important silicon utilizing bacteria are Mycobacteria, Nocardia, Streptomyces, Staphylococcus, Bacillus, Lactobacillus spp. etc., Important silicon utilizing algae are Centrobacillariophyceae, Pennatibacillariophyceae and Chrysophyceae. Many protozoa belonging to Heterokonta, Choanoflagellida, Actinopoda are well known silicon utilizing microorganisms. Hexactinellida ( glass sponges

  5. Choosing a Silicone Encapsulant for Photovoltaic Applications (United States)

    Velderrain, Michelle


    Growth in the solar industry has resulted in newer technologies, specifically concentrator photovoltaic (CPV) modules, to explore using new types of materials such as silicone encapsulants. CPV and LCPV module designs are to achieve the most efficient energy conversion possible however it is equally important to demonstrate long term reliability. Silicone is a material of interest due to its thermal stability and ability to absorb stresses incurred during thermal cycling. The refractive index of clear silicone adhesives is advantageous because it can be optimized using phenyl groups to match BK7 glass and other substrates to minimize light loss at the interfaces but it is relatively unknown how the optical properties change over time possibly yellowing in such a harsh environment. A 1.41 silicone encapsulant is compared to a 1.52 refractive index silicone. Optical Absorption (300 nm-1300 nm), Water Vapor Permeability, Moisture Absorption and effects of oxidation at elevated temperatures will be compared of these materials to aid the engineer in choosing a silicone for their CPV application. Non-phenyl containing 1.41 RI silicones have been used for several years for bonding solar arrays in the satellite industry. Phenyl groups on the siloxane polymer can change various properties of the silicone. Understanding how phenyl affects these properties allows the engineer to understand the benefits and risks when using a RI matching silicone to minimize light loss versus a non-phenyl containing silicone.

  6. Creep analysis of silicone for podiatry applications. (United States)

    Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón


    This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

  7. Dry etch method for texturing silicon and device (United States)

    Gershon, Talia S.; Haight, Richard A.; Kim, Jeehwan; Lee, Yun Seog


    A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

  8. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor


    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  9. Spectroscopy of single silicon nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Martin, J.; Cichos, F.; Borczyskowski, C. von E-mail:


    Confocal microscopy has been performed on silicon nanoparticles prepared by gas-phase methods and electrochemical etching (single particles), respectively. Spectral line narrowing has been obtained for single particles. Spectra are in agreement with interstellar extended red emission (ERE) when properly choosing size distributions. Independent of preparation techniques, both types show similar behaviour with respect to (partly reversible in the dark) photobleaching accompanied by spectral red shifts on timescales of seconds upon 514 nm laser irradiation.

  10. Coating of silicon pore optics

    DEFF Research Database (Denmark)

    Cooper-Jensen, Carsten P.; Ackermann, M.; Christensen, Finn Erland


    For the International X-ray observatory (IXO), a mirror module with an effective area of 3 m2 at 1.25 keV and at least 0.65 m2 at 6 keV has to be realized. To achieve this goal, coated silicon pore optics has been developed over the last years. One of the challenges is to coat the Si plates...

  11. The ATLAS Silicon Pixel Sensors

    CERN Document Server

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C


    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  12. Silicon nanocrystals as handy biomarkers (United States)

    Fujioka, Kouki; Hoshino, Akiyoshi; Manabe, Noriyoshi; Futamura, Yasuhiro; Tilley, Richard; Yamamoto, Kenji


    Quantum dots (QDs) have brighter and longer fluorescence than organic dyes. Therefore, QDs can be applied to biotechnology, and have capability to be applied to medical technology. Currently, among the several types of QDs, CdSe with a ZnS shell is one of the most popular QDs to be used in biological experiments. However, when the CdSe QDs were applied to clinical technology, potential toxicological problems due to CdSe core should be considered. To eliminate the problem, silicon nanocrystals, which have the potential of biocompatibility, could be a candidate of alternate probes. Silicon nanocrystals have been synthesized using several techniques such as aerosol, electrochemical etching, laser pyrolysis, plasma deposition, and colloids. Recently, the silicon nanocrystals were reported to be synthesized in inverse micelles and also stabilized with 1-heptene or allylamine capping. Blue fluorescence of the nanocrystals was observed when excited with a UV light. The nanocrystals covered with 1-heptene are hydrophobic, whereas the ones covered with allylamine are hydrophilic. To test the stability in cytosol, the water-soluble nanocrystals covered with allylamine were examined with a Hela cell incorporation experiment. Bright blue fluorescence of the nanocrystals was detected in the cytosol when excited with a UV light, implying that the nanocrystals were able to be applied to biological imaging. In order to expand the application range, we synthesized and compared a series of silicon nanocrystals, which have variable surface modification, such as alkyl group, alcohol group, and odorant molecules. This study will provide a wider range of optoelectronic applications and bioimaging technology.

  13. Purity of silicon: with great effect on its performance in graphite-silicon anode materials for lithium-ion batteries (United States)

    Jin, Chenxin; Xu, Guojun; Liu, Liekai; Yue, Zhihao; Li, Xiaomin; Sun, Fugen; Tang, Hao; Huang, Haibin; Zhou, Lang


    Ferrosilicon, industrial grade silicon, solar grade silicon, and electronic grade silicon were ball-milled to form four types of silicon powders, which were mixed with graphite powders at weight ratio of 5:95, respectively, for being used as graphite-silicon anode materials in lithium-ion batteries (LIBs). The effect of the purity of silicon on its electrochemical performance in graphite-silicon anode materials for LIBs was investigated by the cycle and rate tests. Results show that silicon with higher purity shows higher capacity, better cycle, and rate performance. In addition, the significant difference in capacity of the four graphite-silicon anodes with different purities of silicon is not completely resulted from the content of silicon materials, and the influence of the impurity inside the silicon cannot be ignored as well. The sample prepared from electronic grade silicon presents the highest first discharge capacity, which is 440.5 mAh g-1.

  14. Modeling Indirect Tunneling in Silicon (United States)

    Chen, Edward

    Indirect tunneling in silicon p-n junctions catches people's attention again in recent years. First, the phenomenon induces a serious leakage problem, so called gate-induced drain leakage (GIDL) effect, in modern metal-oxide-semiconductor field-effect transistors (MOSFETs). Second, it is utilized to develop a novel tunneling transistor with the sharp turn-on ability for continuing ITRS roadmap. Although the indirect tunneling is important for the state-of-the-art transistor-technology, the accuracy of the present tunneling models in technology computer-aided design (TCAD) tools is still vague. In the research work, the theory of indirect tunneling in silicon has been thoroughly studied. The phonon-assisted tunneling model has been developed and compared with the existing ones in the Sentaurus-Synopsys, Medici-Synopsys, and Atlas-Silvaco TCAD tools. Beyond these existing models, ours successfully predicts the indirect tunneling current under the different field direction in silicon. In addition, bandgap narrowing in heavily-doped p-n junctions under the reverse-biased condition is also studied during the model development. At the end of the research work, the application to low standby power (LSTP) transistors is demonstrated to show the capability of our tunneling model in the device level.

  15. Casting larger polycrystalline silicon ingots

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Tomlinson, T.; Cliber, J.; Shea, S.; Narayanan, M.


    Solarex has developed and patented a directional solidification casting process specifically designed for photovoltaics. In this process, silicon feedstock is melted in a ceramic crucible and solidified into a large grained semicrystalline silicon ingot. In-house manufacture of low cost, high purity ceramics is a key to the low cost fabrication of Solarex polycrystalline wafers. The casting process is performed in Solarex designed casting stations. The casting operation is computer controlled. There are no moving parts (except for the loading and unloading) so the growth process proceeds with virtually no operator intervention Today Solarex casting stations are used to produce ingots from which 4 bricks, each 11.4 cm by 11.4 cm in cross section, are cut. The stations themselves are physically capable of holding larger ingots, that would yield either: 4 bricks, 15 cm by 15 an; or 9 bricks, 11.4 cm by 11.4 an in cross-section. One of the tasks in the Solarex Cast Polycrystalline Silicon PVMaT Program is to design and modify one of the castings stations to cast these larger ingots. If successful, this effort will increase the production capacity of Solarex`s casting stations by 73% and reduce the labor content for casting by an equivalent percentage.

  16. Silicon spintronics: Progress and challenges (United States)

    Sverdlov, Viktor; Selberherr, Siegfried


    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  17. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail:


    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  18. Waveguiding Light into Silicon Oxycarbide

    Directory of Open Access Journals (Sweden)

    Faisal Ahmed Memon


    Full Text Available In this work, we demonstrate the fabrication of single mode optical waveguides in silicon oxycarbide (SiOC with a high refractive index n = 1.578 on silica (SiO2, exhibiting an index contrast of Δn = 8.2%. Silicon oxycarbide layers were deposited by reactive RF magnetron sputtering of a SiC target in a controlled process of argon and oxygen gases. The optical properties of SiOC film were measured with spectroscopic ellipsometry in the near-infrared range and the acquired refractive indices of the film exhibit anisotropy on the order of 10−2. The structure of the SiOC films is investigated with atomic force microscopy (AFM and scanning electron microscopy (SEM. The channel waveguides in SiOC are buried in SiO2 (n = 1.444 and defined with UV photolithography and reactive ion etching techniques. Propagation losses of about 4 dB/cm for both TE and TM polarizations at telecommunication wavelength 1550 nm are estimated with cut-back technique. Results indicate the potential of silicon oxycarbide for guided wave applications.

  19. The DAMPE silicon tungsten tracker

    CERN Document Server

    Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D


    The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

  20. Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer. (United States)

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto


    The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of crystalline silicon. 85.35.Be; 84.60.Jt; 78.67.Bf.

  1. Silicon nanostructures in silicon oxynitride for PV application: effect of argon

    Energy Technology Data Exchange (ETDEWEB)

    Ehrhardt, Fabien; Ferblantier, Gerald; Muller, Dominique; Slaoui, Abdelilah [Institut d' Electronique du Solide et des Systemes, UMR CNRS-UdS 7163, 23 Rue du Loess, BP20, 67034 Strasbourg cedex 2 (France); Ulhaq-Bouillet, Corinne [Institut de Physique et Chimie des Materiaux de Strasbourg, UMR CNRS-UdS 7504, 23 Rue du Loess, BP43, 67034 Strasbourg cedex 2 (France)


    Silicon rich silicon oxynitride (SRSON) were deposited by ECR-PECVD to form silicon nanostructures. The effect of argon flow during the deposition was investigated. The silicon nanoparticles were fabricated by a classical thermal treatment of SRSON films. The structural properties of the SRSON films were investigated by RBS and FTIR measurements. We show that the silicon excess in the SiO{sub x}N{sub y} matrix changes slightly with Ar flow but it has a significant impact on the silicon nanoparticles morphology embedded in the silicon oxynitride layer. Different shapes for silicon nanostructures ranging from separated Si nanocrystals to Si nanocolumns were formed as studied by energy-filtred transmission electron microscopy analysis (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Single-Event Effects in Silicon and Silicon Carbide Power Devices (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.


    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  3. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A. [Institut National des Sciences Appliquees (INSA), 69 - Villeurbanne (France). Lab. de Physique de la Matiere; Ouldabbes, A.; Chabane-Sari, N.E. [Institut National des Sciences Appliquees (INSA), 69 - Villeurbanne (France). Lab. de Physique de la Matiere; Lab. des Materiaux et Energies Renouvelables, Tlemcen (Algeria)


    The aim of this experiment is to grow a thin silicon layer (<50{mu}m) by liquid phase epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 {mu}m epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In this work, we used the following procedure : the porous silicon formation by HF anodisation on (100) or (111) Si wafers is realised in first step, followed by an eventual annealing in H{sub 2} atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  4. Silicon entering through silicon utilizing organisms has biological effects in human beings (United States)

    Shraddhamayananda, S.


    Except in the lungs, there is no evidence that silicon can do any harm in our body and Silicon is as essential as magnesium and calcium for us. It helps in proper activities of the bone tissues and all of the components in the human skeletal system. It can prevent osteoporosis in bones and also helps in lowering of blood pressure. Silicon can also inhibit fungal disease by physically inhibiting fungal germ tube penetration of the epidermis. Many of our foods which are associated with silicon utilizing organisms like rice, vegetables, wheat etc, contain plenty silicon, however, during processing most silicon get lost. In alternative medicine silicon is used to promote expulsion of foreign bodies from tissue, in formation of suppuration and finally expulsion of pus from abscesses. Silicon is also used to remove fibrotic lesions and scar tissue and in this way it can prevent formation of keloids. Sometimes it is also used to treat chronic otitis media, and chronic fistula,

  5. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija


    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  6. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko


    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  7. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron


    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a class......The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described...... by a classical Drude–Smith model, suitable for disorder-driven metal–insulator transitions. In this work, we explore the time evolution of the frequency dependent complex conductivity after optical injection of carriers on a picosecond time scale. Furthermore, we show the lifetime of photoconductivity...

  8. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.


    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  9. Silicon Photonics Platform for Government Applications (United States)


    high difference in refractive index that allows the silicon to guide light around relatively sharp bends, facilitating devices with dimensions in the...978-1-4799-5380-6/15/$31.00 ©2015 IEEE Silicon Photonics Platform for Government Applications Anthony L. Lentine, Christopher T. DeRose, Paul...Labs PO Box 5800 MS1082 Albuquerque, NM 87185 505-284-1736 Abstract—   We review Sandia’s silicon photonics platform

  10. Silicon-based nanochannel glucose sensor


    Wang, Xihua; Chen, Yu; Gibney, Katherine A.; Erramilli, Shyamsunder; Mohanty, Pritiraj


    Silicon nanochannel biological field effect transistors have been developed for glucose detection. The device is nanofabricated from a silicon-on-insulator wafer with a top-down approach and surface functionalized with glucose oxidase. The differential conductance of silicon nanowires, tuned with source-drain bias voltage, is demonstrated to be sensitive to the biocatalyzed oxidation of glucose. The glucose biosensor response is linear in the 0.5-8 mM concentration range with 3-5 min response...

  11. Silicon Photomultiplier - New Era of Photon Detection


    Saveliev, Valeri


    Silicon photomultipliers is novel type of the semiconductor photodetector for the detecting of low photon flux. Already now the technology is developed and suitable for many critical application as medical imaging, and biology, homeland security, optic communications, experimental physics and military applications. Few world well known companies Hamamatsu, Sensl, Kotura are already producing or close to production of silicon photomultiplier type sensors. Near future of silicon photomultiplier...

  12. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan


    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  13. Solar cell with silicon oxynitride dielectric layer (United States)

    Shepherd, Michael; Smith, David D


    Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0silicon oxynitride dielectric layer.

  14. Silicon Micromachined Microlens Array for THz Antennas (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria


    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  15. Silicon solid state devices and radiation detection

    CERN Document Server

    Leroy, Claude


    This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers stateof- the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application.

  16. High breakdown-strength composites from liquid silicone rubbers

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Zakaria, Shamsul Bin; Yu, Liyun


    In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially...

  17. Hot Electron Injection into Uniaxially Strained Silicon (United States)

    Kim, Hyun Soo

    In semiconductor spintronics, silicon attracts great attention due to the long electron spin lifetime. Silicon is also one of the most commonly used semiconductor in microelectronics industry. The spin relaxation process of diamond crystal structure such as silicon is dominant by Elliot-Yafet mechanism. Yafet shows that intravalley scattering process is dominant. The conduction electron spin lifetime measured by electron spin resonance measurement and electronic measurement using ballistic hot electron method well agrees with Yafet's theory. However, the recent theory predicts a strong contribution of intervalley scattering process such as f-process in silicon. The conduction band minimum is close the Brillouin zone edge, X point which causes strong spin mixing at the conduction band. A recent experiment of electric field-induced hot electron spin relaxation also shows the strong effect of f-process in silicon. In uniaxially strained silicon along crystal axis [100], the suppression of f-process is predicted which leads to enhance electron spin lifetime. By inducing a change in crystal structure due to uniaxial strain, the six fold degeneracy becomes two fold degeneracy, which is valley splitting. As the valley splitting increases, intervalley scattering is reduced. A recent theory predicts 4 times longer electron spin lifetime in 0.5% uniaxially strained silicon. In this thesis, we demonstrate ballistic hot electron injection into silicon under various uniaxial strain. Spin polarized hot electron injection under strain is experimentally one of the most challenging part to measure conduction electron spin lifetime in silicon. Hot electron injection adopts tunnel junction which is a thin oxide layer between two conducting materials. Tunnel barrier, which is an oxide layer, is only 4 ˜ 5 nm thick. Also, two conducting materials are only tens of nanometer. Therefore, under high pressure to apply 0.5% strain on silicon, thin films on silicon substrate can be easily

  18. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan


    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  19. New Perspectives in Silicon Micro and Nanophotonics (United States)

    Casalino, M.; Coppola, G.; De Stefano, L.; Calio, A.; Rea, I.; Mocella, V.; Dardano, P.; Romano, S.; Rao, S.; Rendina, I.


    In the last two decades, there has been growing interest in silicon-based photonic devices for many optical applications: telecommunications, interconnects and biosensors. In this work, an advance overview of our results in this field is presented. Proposed devices allow overcoming silicon intrinsic drawbacks limiting its application as a photonic substrate. Taking advantages of both non-linear and linear effects, size reduction at nanometric scale and new two-dimensional emerging materials, we have obtained a progressive increase in device performance along the last years. In this work we show that a suitable design of a thin photonic crystal slab realized in silicon nitride can exhibit a very strong field enhancement. This result is very promising for all photonic silicon devices based on nonlinear phenomena. Moreover we report on the fabrication and characterization of silicon photodetectors working at near-infrared wavelengths based on the internal photoemission absorption in a Schottky junction. We show as an increase in device performance can be obtained by coupling light into both micro-resonant cavity and waveguiding structures. In addition, replacing metal with graphene in a Schottky junction, a further improve in PD performance can be achieved. Finally, silicon-based microarray for biomedical applications, are reported. Microarray of porous silicon Bragg reflectors on a crystalline silicon substrate have been realized using a technological process based on standard photolithography and electrochemical anodization of the silicon. Our insights show that silicon is a promising platform for the integration of various optical functionalities on the same chip opening new frontiers in the field of low-cost silicon micro and nanophotonics.

  20. Emerging heterogeneous integrated photonic platforms on silicon (United States)

    Fathpour, Sasan


    Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with

  1. Crystal growth and evaluation of silicon for VLSI and ULSI

    CERN Document Server

    Eranna, Golla


    PrefaceAbout the AuthorIntroductionSilicon: The SemiconductorWhy Single CrystalsRevolution in Integrated Circuit Fabrication Technology and the Art of Device MiniaturizationUse of Silicon as a SemiconductorSilicon Devices for Boolean ApplicationsIntegration of Silicon Devices and the Art of Circuit MiniaturizationMOS and CMOS Devices for Digital ApplicationsLSI, VLSI, and ULSI Circuits and ApplicationsSilicon for MEMS ApplicationsSummaryReferencesSilicon: The Key Material for Integrated Circuit Fabrication TechnologyIntroductionPreparation of Raw Silicon MaterialMetallurgical-Grade SiliconPuri

  2. Partitioning Effects in Recrystallization of Silicon from Silicon-Metal Solutions

    Energy Technology Data Exchange (ETDEWEB)

    Good, E. A.; Wang, T. H.; Ciszek, T. F.; Frost, R. H.; Page, M. R.; Landry, M. D.


    The objective of this work is to investigate various silicon-metal eutectic systems that selectively retain detrimental impurities, such as Ni, Co, Fe, Cr, in the melt so that silicon may be purified. We studied possible interactions in the melt and in the silicon crystal between impurity elements and solvent metals that lead to reduced or enhanced impurity partition relative to the respective silicon-impurity binary systems. Systems such as Al- Si, Cu-Si, and In-Si show promises of reduced impurity incorporations in recrystallized silicon, which are good candidates for further investigation besides Ga-Si, Au-Si, and Ag-Si.

  3. The STAR silicon vertex tracker: a large area silicon drift detector

    CERN Document Server

    Lynn, D; Beuttenmüller, Rolf H; Caines, H; Chen, W; Dimassimo, D; Dyke, H; Elliot, D; Eremin, V; Grau, M; Hoffmann, G W; Humanic, T; Ilyashenko, Yu S; Kotov, I; Kraner, H W; Kuczewski, P; Leonhardt, B; Li, Z; Liaw, C J; Lo Curto, G; Middelkamp, P; Minor, R; Munhoz, M; Ott, G; Pandey, S U; Pruneau, C A; Rykov, V L; Schambach, J; Sedlmeir, J; Soja, B; Sugarbaker, E R; Takahashi, J; Wilson, K; Wilson, R


    The Solenoidal Tracker At RHIC-Silicon Vertex Tracker (STAR-SVT) is a three barrel microvertex detector based upon silicon drift detector technology. As designed for the STAR-SVT, silicon drift detectors (SDDs) are capable of providing unambiguous two-dimensional hit position measurements with resolutions on the order of 20 mu m in each coordinate. Achievement of such resolutions, particularly in the drift direction coordinate, depends upon certain characteristics of silicon and drift detector geometry that are uniquely critical for silicon drift detectors hit measurements. Here we describe features of the design of the STAR-SVT SDDs and the front-end electronics that are motivated by such characteristics.

  4. Fabrication of thick silicon nitride blocks embedded in low-resistivity silicon substrates for radio frequency applications


    Fernandez, L.J.; Berenschot, Johan W.; Wiegerink, Remco J.; Flokstra, Jakob; Flokstra, Jan; Jansen, Henricus V.; Elwenspoek, Michael Curt


    Thick silicon nitride blocks embedded in silicon wafers were recently proposed as a substrate for RF devices. In this paper we show that deep trenches filled with silicon nitride—having thin slices of monocrystalline silicon in between—already result in a significantly improved RF behavior. Measurement results are presented on RF coplanar waveguides using solid silicon nitride blocks and silicon nitride filled trenches with various dimensions and orientations with respect to the transmission ...

  5. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    Directory of Open Access Journals (Sweden)

    Zahra Ostadmahmoodi Do


    Full Text Available Nanowires (NWs are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW, is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method for producing nanowires of the same substrate material. The process conditions are adjusted to find the best quality of Si NWs. Morphology of Si NWs is studied using a field emission scanning electron microscopic technique. An energy dispersive X-Ray analyzer is also used to provide elemental identification and quantitative compositional information. Subsequently, Schottky type solar cell samples are fabricated on Si and Si NWs using ITO and Ag contacts. The junction properties are calculated using I-V curves in dark condition and the solar cell I-V characteristics are obtained under incident of the standardized light of AM1.5. The results for the two mentioned Schottky solar cell samples are compared and discussed. An improvement in short circuit current and efficiency of Schottky solar cell is found when Si nanowires are employed.

  6. Optical manipulation of silicon nanowires on silicon nitride waveguides (United States)

    Néel, D.; Gétin, S.; Fedeli, J.-M.; Baron, T.; Gentile, P.; Ferret, P.


    Semiconductor nanowires are drawing more and more interest due to their numerous potential applications in nanoelectronics devices [1,2], including interconnects, transistor channels, nanoelectrodes, or in the emerging application areas of photonics [3], chemistry [4] and photovoltaics [5]. In this context, optical tweezers appear like a pertinent tool for the manipulation and assembly of nanowires into complex structures. It was previously shown that the near-field existing at the surface of a waveguide allows the micromanipulation of nanoparticles and biological objects [6,7]. In this article, we investigate for the first time to our knowledge the motion of silicon nanowires above silicon nitride waveguides. The nanowires in aqueous solution are attracted toward the waveguide by optical gradient forces. The nanowires align themselves according to the axis of the waveguide and get propelled along the waveguide due to radiation pressure. Velocities are up to 40 μm/s. For a better understanding of the experimental results, the distribution of the electromagnetic field in the nanowire is calculated using the finite element method. Then, the resulting optical forces exerted on the nanowires are calculated, thanks to the Maxwell stress tensor formalism.

  7. Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices (United States)

    Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Trapp, Scott


    Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

  8. Epitaxial silicon carbide on a 6″ silicon wafer (United States)

    Kukushkin, S. A.; Lukyanov, A. V.; Osipov, A. V.; Feoktistov, N. A.


    The results of the growth of silicon-carbide films on silicon wafers with a large diameter of 150 mm (6″) by using a new method of solid-phase epitaxy are presented. A SiC film growing on Si wafers was studied by means of spectral ellipsometry, SEM, X-ray diffraction, and Raman scattering. As follows from the studies, SiC layers are epitaxial over the entire surface of a 150-mm wafer. The wafers have no mechanical stresses, are smooth, and do not have bends. The half-width of the X-ray rocking curve (FWHMω- θ) of the wafers varies in the range from 0.7° to 0.8° across the thickness layer of 80-100 nm. The wafers are suitable as templates for the growth of SiC, AlN, GaN, ZnO, and other wide-gap semiconductors on its surface using standard CVD, HVPE, and MBE methods.

  9. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir


    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  10. Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing (United States)

    Yuan, Zhishan; Wang, Chengyong; Chen, Ke; Ni, Zhonghua; Chen, Yunfei


    In this paper, amorphous silicon nanowires (α-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 °C for 30 min under Ar/H2 atmosphere). Micro size Cu pattern fabrication decided whether α-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis α-SiNWs. What is more, the size of α-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 × 103 Ω·cm (84 nm diameter and 21 μm length). This simple fabrication method makes application of α-SiNWs become possible.

  11. The Belle Silicon Vertex Detector

    CERN Document Server

    Kawasaki, T


    The Belle Silicon Vertex Detector (SVD) started working from June 1999 at the KEK B-factory experiment. The main purpose of the SVD is to make precise measurements of the B decay vertex position, which are essential for the observation of CP asymmetries. Excellent vertex resolution and a good detection efficiency are required for the SVD. In the present paper, the performance of Belle SVD is reviewed. The upgrade plan for the SVD2, which is under construction and will be installed in summer 2002, is also presented.

  12. The CDF Silicon Vertex Detector

    Energy Technology Data Exchange (ETDEWEB)

    Tkaczyk, S.; Carter, H.; Flaugher, B. [and others


    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the detector in the radiation environment are discussed. The device has been taking colliding beams data since May of 1992, performing at its best design specifications and enhancing the physics program of CDF.

  13. Untreated silicone breast implant rupture

    DEFF Research Database (Denmark)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten


    were evaluated. Comparisons were also made for self-reported breast symptoms occurring during the study period and for changes in serum values of antinuclear antibodies, rheumatoid factor, and cardiolipin antibodies immunoglobulin G and immunoglobulin M. The majority of the women with implant rupture...... that implant rupture is a relatively harmless condition, which only rarely progresses and gives rise to notable symptoms. Even so, because of a small risk of silicone spread, the authors suggest that women with implant ruptures be followed clinically, if not operated on. Because implant ruptures often occur...

  14. Silicon photonics for multicore fiber communication

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld


    We review our recent work on silicon photonics for multicore fiber communication, including multicore fiber fan-in/fan-out, multicore fiber switches towards reconfigurable optical add/drop multiplexers. We also present multicore fiber based quantum communication using silicon devices....

  15. Broadband Nonlinear Signal Processing in Silicon Nanowires

    DEFF Research Database (Denmark)

    Yvind, Kresten; Pu, Minhao; Hvam, Jørn Märcher

    The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion...

  16. Case Report: Magnetically retained silicone facial prosthesis ...

    African Journals Online (AJOL)

    Prosthetic camouflaging of facial defects and use of silicone maxillofacial material are the alternatives to the surgical retreatment. Silicone elastomers provide more options to clinician for customization of the facial prosthesis which is simple, esthetically good when coupled with bio magnets for retention. Key words: Magnet ...

  17. Optical spectroscopy of single silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Gruen, Mathias; Steinmetz, David; Becher, Christoph [Fachrichtung 7.3 (Technische Physik), Universitaet des Saarlandes, 66041 Saarbruecken (Germany); Miska, Patrice; Montaigne, F.; Rinnert, Herve; Vergnat, Michel [Laboratoire de Physique des Materiaux - UMR- CNRS 7556, Universite Henri Poincare Nancy I, Faculte des Sciences et Techniques, 54506 Vandoeuvre-les-Nancy (France)


    Silicon crystals with sizes of few nanometers embedded in a silica matrix show an improved quantum efficiency for optical emission in comparison with bulk silicon yielding an intense photoluminescence signal in the spectral region around 700-800 nm. This surprising property is attributed to the quantum confinement of excitons in these nanocrystals, also called ''silicon quantum dots''. Such nanostructures are promising candidates for the realization of photonic devices and quantum optics experiments. Although the properties of an ensemble of silicon nanocrystals are well known the optical properties of a single silicon quantum dot are still not well understood. Thus, the investigation of single silicon nanocrystals will contribute to the understanding of their intense photoluminescence. Isolating single silicon nanocrystals would also allow for their employment in quantum optics experiments. Here, we report on the fabrication of silicon nanocrystals with sizes of about 3 nm embedded in thin silica films. The samples show intense luminescence at 770-800 nm depending on fabrication parameters. We discuss the luminescence properties and strategies to experimentally isolate single nanocrystals.

  18. Selecting silicone tubing for device applications. (United States)

    Jahn, D


    A number of factors are involved in selecting the most suitable silicone tubing for a given purpose. These include physical chemistry, performance properties, a supplier's quality system and regulatory compliance. This article provides a guide for device developers when selecting silicone tubing for their applications.

  19. Mechanism of single atom switch on silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.


    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...

  20. Micromachined silicon plates for sensing molecular interactions

    NARCIS (Netherlands)

    Carlen, Edwin; Weinberg, M.S.; Dube, C.E.; Zapata, A.M.; Borenstein, J.T.


    A micromachined surface stress sensor based on a thin suspended crystalline silicon circular plate measures differential surface stress changes associated with vapor phase chemisorption of an alkanethiol self-assembled monolayer. The isolated face of the suspended silicon plate serves as the sensing

  1. SOI silicon on glass for optical MEMS

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Ravnkilde, Jan Tue; Hansen, Ole


    A newly developed fabrication method for fabrication of single crystalline Si (SCS) components on glass, utilizing Deep Reactive Ion Etching (DRIE) of a Silicon On Insulator (SOI) wafer is presented. The devices are packaged at wafer level in a glass-silicon-glass (GSG) stack by anodic bonding...

  2. Identification of a Mammalian Silicon Transporter

    NARCIS (Netherlands)

    Ratcliffe, Sarah; Jugdaohsingh, Ravin; Ma, Jian Feng; Mitani-Ueno, Nakimi; Vivancos, Julien; Deshmukh, Rupesh; Boekschoten, Mark; Muller, Michael; Mawhinney, Robert; Marron, Alan; Isenring, Paul; Kinrade, Stephen; Bélanger, Richard; Powell, Jonathan


    Silicon (Si) has long been known to play a major physiological role in certain organisms, including some sponges and many diatoms and higher plants, leading to the recent identification of multiple proteins responsible for silicon transport in a range of algal and plant species. In mammals, despite

  3. Silicon nanostructures produced by laser direct etching

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Dirac, Paul Andreas Holger; Petersen, Jon Wulff


    A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only...

  4. Silicon LEDs in FinFET technology

    NARCIS (Netherlands)

    Piccolo, G.; Kuindersma, P.I.; Ragnarsson, L-A.; Hueting, Raymond Josephus Engelbart; Collaert, N.; Schmitz, Jurriaan


    We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped

  5. Improved Jet-Mill Silicon Grinder (United States)

    Collins, Earl R., Jr.


    Proposed refinement in jet-mill grinding of silicon reduces proportion of unusable, overly ground particles. Particles serve as seeds for growth of silicon from vapor. In new grinding apparatus, particle separator distinct from collision chamber. Particle collides only once before sorted for size. If proper size, extracted; if not, returned to chamber for another collision.

  6. Hydroxide catalysis bonding of silicon carbide

    NARCIS (Netherlands)

    Veggel, A.A. van; Ende, D.A. van den; Bogenstahl, J.; Rowan, S.; Cunningham, W.; Gubbels, G.H.M.; Nijmeijer, H.


    For bonding silicon carbide optics, which require extreme stability, hydroxide catalysis bonding is considered [Rowan, S., Hough, J. and Elliffe, E., Silicon carbide bonding. UK Patent 040 7953.9, 2004. Please contact Mr. D. Whiteford for further information:]. This

  7. Simple Approach to Superamphiphobic Overhanging Silicon Nanostructures

    DEFF Research Database (Denmark)

    Kumar, Rajendra; Mogensen, Klaus Bo; Bøggild, Peter


    with contact angles up to 152 degrees and roll-off angle down to 8 degrees. Such nonlithographic nanoscale overhanging Structures can also be added to silicon nanograss by deposition of a thin SiO2 layer, which equips the silicon rods with 100-300 nm sized overhanging Structures. This is a simple, fast...

  8. Optical and microstructural investigations of porous silicon

    Indian Academy of Sciences (India)

    Raman scattering and photoluminescence (PL) measurements on (100) oriented -type crystalline silicon (-Si) and porous silicon (PS) samples were carried out. PS samples were prepared by anodic etching of -Si under the illumination of light for different etching times of 30, 60 and 90 min. Raman scattering from the ...

  9. Fabricating solar cells with silicon nanoparticles (United States)

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok


    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  10. Hysteroscopic tubal occlusion with silicone rubber. (United States)

    Reed, T P; Erb, R


    A new method of sterilization for women is being investigated in several outpatient centers. The technique involves flowing liquid silicone rubber into the fallopian tubes. The silicone cures in place and forms a rubbery solid plug. The catalyzed liquid silicone is pumped through a special polysulfone guide assembly that fits through the operating channel of a standard hysteroscope. On the end of the guide is a hollow premolded silicone rubber tip that fits into the cornual ostium of the tube. When the silicone cures it also cross-links to this tip so that the tip becomes part of the plug. Results as of April 1, 1982, from 350 women in the Philadelphia center suggest that proper plug formation prevents pregnancy and that the method can be applied to about 85% of properly selected women.

  11. Silicon photonics and challenges for fabrication (United States)

    Feilchenfeld, N. B.; Nummy, K.; Barwicz, T.; Gill, D.; Kiewra, E.; Leidy, R.; Orcutt, J. S.; Rosenberg, J.; Stricker, A. D.; Whiting, C.; Ayala, J.; Cucci, B.; Dang, D.; Doan, T.; Ghosal, M.; Khater, M.; McLean, K.; Porth, B.; Sowinski, Z.; Willets, C.; Xiong, C.; Yu, C.; Yum, S.; Giewont, K.; Green, W. M. J.


    Silicon photonics is rapidly becoming the key enabler for meeting the future data speed and volume required by the Internet of Things. A stable manufacturing process is needed to deliver cost and yield expectations to the technology marketplace. We present the key challenges and technical results from both 200mm and 300mm facilities for a silicon photonics fabrication process which includes monolithic integration with CMOS. This includes waveguide patterning, optical proximity correction for photonic devices, silicon thickness uniformity and thick material patterning for passive fiber to waveguide alignment. The device and process metrics show that the transfer of the silicon photonics process from 200mm to 300mm will provide a stable high volume manufacturing platform for silicon photonics designs.

  12. Silicon quantum dots for biological applications. (United States)

    Chinnathambi, Shanmugavel; Chen, Song; Ganesan, Singaravelu; Hanagata, Nobutaka


    Semiconductor nanoparticles (or quantum dots, QDs) exhibit unique optical and electronic properties such as size-controlled fluorescence, high quantum yields, and stability against photobleaching. These properties allow QDs to be used as optical labels for multiplexed imaging and in drug delivery detection systems. Luminescent silicon QDs and surface-modified silicon QDs have also been developed as potential minimally toxic fluorescent probes for bioapplications. Silicon, a well-known power electronic semiconductor material, is considered an extremely biocompatible material, in particular with respect to blood. This review article summarizes existing knowledge related to and recent research progress made in the methods for synthesizing silicon QDs, as well as their optical properties and surface-modification processes. In addition, drug delivery systems and in vitro and in vivo imaging applications that use silicon QDs are also discussed. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Silicon nanostructures for cancer diagnosis and therapy. (United States)

    Peng, Fei; Cao, Zhaohui; Ji, Xiaoyuan; Chu, Binbin; Su, Yuanyuan; He, Yao


    The emergence of nanotechnology suggests new and exciting opportunities for early diagnosis and therapy of cancer. During the recent years, silicon-based nanomaterials featuring unique properties have received great attention, showing high promise for myriad biological and biomedical applications. In this review, we will particularly summarize latest representative achievements on the development of silicon nanostructures as a powerful platform for cancer early diagnosis and therapy. First, we introduce the silicon nanomaterial-based biosensors for detecting cancer markers (e.g., proteins, tumor-suppressor genes and telomerase activity, among others) with high sensitivity and selectivity under molecular level. Then, we summarize in vitro and in vivo applications of silicon nanostructures as efficient nanoagents for cancer therapy. Finally, we discuss the future perspective of silicon nanostructures for cancer diagnosis and therapy.

  14. Roll up nanowire battery from silicon chips. (United States)

    Vlad, Alexandru; Reddy, Arava Leela Mohana; Ajayan, Anakha; Singh, Neelam; Gohy, Jean-François; Melinte, Sorin; Ajayan, Pulickel M


    Here we report an approach to roll out Li-ion battery components from silicon chips by a continuous and repeatable etch-infiltrate-peel cycle. Vertically aligned silicon nanowires etched from recycled silicon wafers are captured in a polymer matrix that operates as Li(+) gel-electrolyte and electrode separator and peeled off to make multiple battery devices out of a single wafer. Porous, electrically interconnected copper nanoshells are conformally deposited around the silicon nanowires to stabilize the electrodes over extended cycles and provide efficient current collection. Using the above developed process we demonstrate an operational full cell 3.4 V lithium-polymer silicon nanowire (LIPOSIL) battery which is mechanically flexible and scalable to large dimensions.

  15. Ultra-High Capacity Silicon Photonic Interconnects through Spatial Multiplexing (United States)

    Chen, Christine P.

    The market for higher data rate communication is driving the semiconductor industry to develop new techniques of writing at smaller scales, while continuing to scale bandwidth at low power consumption. Silicon photonic (SiPh) devices offer a potential solution to the electronic interconnect bandwidth bottleneck. SiPh leverages the technology commensurate of decades of fabrication development with the unique functionality of next-generation optical interconnects. Finer fabrication techniques have allowed for manufacturing physical characteristics of waveguide structures that can support multiple modes in a single waveguide. By refining modal characteristics in photonic waveguide structures, through mode multiplexing with the asymmetric y-junction and microring resonator, higher aggregate data bandwidth is demonstrated via various combinations of spatial multiplexing, broadening applications supported by the integrated platform. The main contributions of this dissertation are summarized as follows. Experimental demonstrations of new forms of spatial multiplexing combined together exhibit feasibility of data transmission through mode-division multiplexing (MDM), mode-division and wavelength-division multiplexing (MDM-WDM), and mode-division and polarization-division multiplexing (MDM-PDM) through a C-band, Si photonic platform. Error-free operation through mode multiplexers and demultiplexers show how data can be viably scaled on multiple modes and with existing spatial domains simultaneously. Furthermore, we explore expanding device channel support from two to three arms. Finding that a slight mismatch in the third arm can increase crosstalk contributions considerably, especially when increasing data rate, we explore a methodical way to design the asymmetric y-junction device by considering its angles and multiplexer/demultiplexer arm width. By taking into consideration device fabrication variations, we turn towards optimizing device performance post

  16. Micromachined silicon seismic accelerometer development

    Energy Technology Data Exchange (ETDEWEB)

    Barron, C.C.; Fleming, J.G.; Montague, S. [and others


    Batch-fabricated silicon seismic transducers could revolutionize the discipline of seismic monitoring by providing inexpensive, easily deployable sensor arrays. Our ultimate goal is to fabricate seismic sensors with sensitivity and noise performance comparable to short-period seismometers in common use. We expect several phases of development will be required to accomplish that level of performance. Traditional silicon micromachining techniques are not ideally suited to the simultaneous fabrication of a large proof mass and soft suspension, such as one needs to achieve the extreme sensitivities required for seismic measurements. We have therefore developed a novel {open_quotes}mold{close_quotes} micromachining technology that promises to make larger proof masses (in the 1-10 mg range) possible. We have successfully integrated this micromolding capability with our surface-micromachining process, which enables the formation of soft suspension springs. Our calculations indicate that devices made in this new integrated technology will resolve down to at least sub-{mu}G signals, and may even approach the 10{sup -10} G/{radical}Hz acceleration levels found in the low-earth-noise model.

  17. Vacuum silicon photomultipliers: Recent developments

    Energy Technology Data Exchange (ETDEWEB)

    Barbarino, Giancarlo [Dipartimento Scienze Fisiche, Università “Federico II” Napoli (Italy); INFN Napoli (Italy); Barbato, Felicia Carla Tiziana [INFN Napoli (Italy); Campajola, Luigi [Dipartimento Scienze Fisiche, Università “Federico II” Napoli (Italy); Asmundis, Riccardo de [INFN Napoli (Italy); De Rosa, Gianfranca [Dipartimento Scienze Fisiche, Università “Federico II” Napoli (Italy); Mollo, Carlos Maximiliano [INFN Napoli (Italy); Vivolo, Daniele, E-mail: [Dipartimento Scienze Fisiche, Università “Federico II” Napoli (Italy); INFN Napoli (Italy)


    VSiPMT (Vacuum Silicon PhotoMultiplier Tube) is an innovative design for a modern hybrid, high gain, silicon based photodetector based on the combination of a SiPM with a hemispherical vacuum glass PMT standard envelope. In such a device photoelectrons emitted by the photocathode are accelerated and focused by an electric field towards a small focal area covered by the SiPM which therefore acts as an amplifier, thus substituting the classical dynode chain of a PMT. With a view to the realization of a first prototype of VSiPMT our group is carrying out a preliminary work aimed at the study of SiPM performances as an electron detector, including an accurate Geant4-based simulation of the interaction between SiPM and electron beams. In order to perform a full characterization of the SiPM we developed an experimental setup for the extraction and the acceleration of a beam of backward secondary electrons emitted after the bombardment of a carbon foil by a proton beam extracted in a TTT-3 accelerator.

  18. Silicon transporters in higher plants. (United States)

    Ma, Jian Feng


    Silicon (Si) is the second most abundant element in the Earth's crust and exerts beneficial effects on plant growth and production by alleviating both biotic and abiotic stresses including diseases, pests, lodging, drought and nutrient imbalance. Silicon is taken up by the roots in the form ofsilicic acid, a noncharged molecule. Recently both influx (Lsil) and efflux (Lsi2) transporters for silicic acid have been identified in gramineous plants including rice, barley and maize. Lsil and its homologs are influx Si transporters, which belong to a Nod26-like major intrinsic protein (NIP) subfamily in the aquaporin protein family. They are responsible for the transport of Si from the external solution to the root cells. On the other hand, Lsi2 and its homologs are efflux Si transporters, belonging to putative anion transporters and are responsible for the transport of Si out of the cells toward the xylem. All influx transporters show polar localization at the distal side. Among efflux transporters, Lsi2 in rice shows polar localization at the proximal side, but that in barley and maize does not show polar localization. The cell-specificity of localization of Si transporters and expression patterns are different between species. Rice Si transporters are also permeable to arsenite.

  19. Phonon conduction in silicon nanobeams (United States)

    Park, Woosung; Shin, Dongsuk D.; Kim, Soo Jin; Katz, Joseph S.; Park, Joonsuk; Ahn, Chae Hyuck; Kodama, Takashi; Asheghi, Mehdi; Kenny, Thomas W.; Goodson, Kenneth E.


    Despite extensive studies on thermal transport in thin silicon films, there has been little work studying the thermal conductivity of single-crystal rectangular, cross-sectional nanobeams that are commonly used in many applications such as nanoelectronics (FinFETs), nano-electromechanical systems, and nanophotonics. Here, we report experimental data on the thermal conductivity of silicon nanobeams of a thickness of ˜78 nm and widths of ˜65 nm, 170 nm, 270 nm, 470 nm, and 970 nm. The experimental data agree well (within ˜9%) with the predictions of a thermal conductivity model that uses a combination of bulk mean free paths obtained from ab initio calculations and a suppression function derived from the kinetic theory. This work quantifies the impact of nanobeam aspect ratios on thermal transport and establishes a criterion to differentiate between thin films and beams in studying thermal transport. The thermal conductivity of a 78 nm × 65 nm nanobeam is ˜32 W m-1 K-1, which is roughly a factor of two smaller than that of a 78 nm thick film.

  20. Industrial Silicon Wafer Solar Cells

    Directory of Open Access Journals (Sweden)

    Dirk-Holger Neuhaus


    Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

  1. Low cost silicon solar array project large area silicon sheet task: Silicon web process development (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.


    Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

  2. Hysteroscopic sterilization: silicone elastic plugs. (United States)

    Reed, T P


    Erb, Davis, and Kyriazis developed the application of the silicone rubber plug directly into the cornual openings of the fallopian tubes in rabbits by working through hysterotomies. Subsequently, does were exposed to bucks for periods up to 280 days, and none of the does became pregnant. Tissue sections of some tubes were studied microscopically, and no pathological findings were found. The only finding was the flattening of the cilia. This work continued through the early 1970s at Franklin Research Center and Hahnemann Medical College in Philadelphia. 2 basic concepts were developed: 1) there was direct application of catalyzed silicone rubber into the cornual ostium, and 2) the molded obturator (cornual) tip became part of the plug. The technique's success depends on the fact that silicone rubber cures (becomes a rubbery solid) in about 5 minutes without heat or chemical reaction. The formed-in-place plug is made possible because the silicone rubber in curing will cross-link to itself only with the result that the obturator tip at the cornu cross-links and becomes part of the formed-in-place plug. The procedure, as performed in humans, is outlined in detail and is diagrammed. A single hinged bivalve speculum exposes the cervix so that after the hysteroscope is inserted through the cervix into the uterine cavity, the speculum can be removed. The procedure should be performed early in the proliferative phase of the cycle, for generally visualization is better at this time because the endometrium is thinner and less vascular and succulent. Once the ostia have been identified, the aspirator is removed from the cavity. The guide assembly with its attached obturator tip is introduced through the opening channel of the scope into the uterine cavity. Once bilateral good push tests have been obtained, the assistant adds catalyst (stanous octuate) to the silicone in the nonairentraining mixer and dispenser that has been taken from the freezer. Once curing is complete, the

  3. Synthesis of colloidal solutions with silicon nanocrystals from porous silicon. (United States)

    Luna López, José Alberto; Garzón Román, Abel; Gómez Barojas, Estela; Gracia, Jf Flores; Martínez Juárez, Javier; Carrillo López, Jesús


    In this work, we have obtained colloidal solutions of Si nanocrystals (Si-ncs), starting from free-standing porous silicon (PSi) layers. PSi layers were synthesized using a two-electrode Teflon electrochemical cell; the etching solution contained hydrogen peroxide 30%, hydrofluoric acid 40% (HF), and methanol. The anodizing current density was varied to 250 mA cm(-2), 1 A cm(-2), and 1.2 A cm(-2). Thus obtained, PSi was mechanically pulverized in a mortar agate; then, the PSi powders were poured into different solutions to get the final Si-ncs colloidal solutions. The different optical, morphological, and structural characteristics of the colloidal solutions with Si-ncs were measured and studied. These Si-ncs colloidal solutions, measured by photoluminescence (PL), revealed efficient blue-green or violet emission intensities. The results of X-ray diffraction (XRD) indicate that the colloidal solutions are mainly composed of silicon nanocrystallites. The result of UV-vis transmittance indicates that the optical bandgap energies of the colloidal solutions varied from 2.3 to 3.5 eV for colloids prepared in methanol, ethanol, and acetone. The transmission electron microscopy (TEM) images showed the size of the nanocrystals in the colloidal solutions. Fourier transform infrared spectroscopy (FTIR) spectra showed different types of chemical bonds such as Si-O-Si, Si-CH2, and SiH x , as well as some kind of defects. 61.46Df.-a; 61.43.Gt; 61.05.cp; 78.55.-m; 81.15.Gh.

  4. Lifetime of Nano-Structured Black Silicon for Photovoltaic Applications

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk


    In this work, we present recent results of lifetime optimization for nano-structured black silicon and its photovoltaic applications. Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nanostructures with excellent light trapping......, respectively. This is promising for use of black silicon RIE nano-structuring in a solar cell process flow...

  5. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain


    results on bonding of thin and thick Si3N4 layers. The new results include high temperature bonding without any pretreatment, along with improved bonding ability achieved by thermal oxidation and chemical pretreatment. The bonded wafers include both unprocessed and processed wafers with a total silicon......While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...... specific. Often fusion bonding of silicon nitride surfaces to silicon or silicon dioxide to silicon surfaces is preferred, though Si3N4–Si3N4 bonding is indeed possible and practical for many devices as will be shown in this paper. We present an overview of existing knowledge on Si3N4–Si3N4 bonding and new...

  6. Silicon Micro- and Nanofabrication for Medicine (United States)

    Fine, Daniel; Goodall, Randy; Bansal, Shyam S.; Chiappini, Ciro; Hosali, Sharath; van de Ven, Anne L.; Srinivasan, Srimeenkashi; Liu, Xuewu; Godin, Biana; Brousseau, Louis; Yazdi, Iman K.; Fernandez-Moure, Joseph; Tasciotti, Ennio; Wu, Hung-Jen; Hu, Ye; Klemm, Steve; Ferrari, Mauro


    This manuscript constitutes a review of several innovative biomedical technologies fabricated using the precision and accuracy of silicon micro- and nanofabrication. The technologies to be reviewed are subcutaneous nanochannel drug delivery implants for the continuous tunable zero-order release of therapeutics, multi-stage logic embedded vectors for the targeted systemic distribution of both therapeutic and imaging contrast agents, silicon and porous silicon nanowires for investigating cellular interactions and processes as well as for molecular and drug delivery applications, porous silicon (pSi) as inclusions into biocomposites for tissue engineering, especially as it applies to bone repair and regrowth, and porous silica chips for proteomic profiling. In the case of the biocomposites, the specifically designed pSi inclusions not only add to the structural robustness, but can also promote tissue and bone regrowth, fight infection, and reduce pain by releasing stimulating factors and other therapeutic agents stored within their porous network. The common material thread throughout all of these constructs, silicon and its associated dielectrics (silicon dioxide, silicon nitride, etc.), can be precisely and accurately machined using the same scalable micro- and nanofabrication protocols that are ubiquitous within the semiconductor industry. These techniques lend themselves to the high throughput production of exquisitely defined and monodispersed nanoscale features that should eliminate architectural randomness as a source of experimental variation thereby potentially leading to more rapid clinical translation. PMID:23584841

  7. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.


    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  8. Porous silicon technology for integrated microsystems (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  9. Silicon Heterojunction System Field Performance

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, Dirk C.; Deline, Chris; Johnston, Steve; Rummel, Steve R.; Sekulic, Bill; Hacke, Peter; Kurtz, Sarah R.; Davis, Kristopher O.; Schneller, Eric John; Sun, Xingshu; Alam, Muhammad A.; Sinton, Ronald A.


    A silicon heterostructure photovoltaic system fielded for 10 years has been investigated in detail. The system has shown degradation, but at a rate similar to an average Si system, and still within the module warranty level. The power decline is dominated by a nonlinear Voc loss rather than more typical changes in Isc or Fill Factor. Modules have been evaluated using multiple techniques including: dark and light I-V measurement, Suns-Voc, thermal imaging, and quantitative electroluminescence. All techniques indicate that recombination and series resistance in the cells have increased along with a decrease of factor 2 in minority carrier lifetime. Performance changes are fairly uniform across the module, indicating changes occur primarily within the cells.

  10. Germanium silicon physics and materials

    CERN Document Server

    Willardson, R K; Bean, John C; Hull, Robert


    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  11. Silicon in plant disease control

    Directory of Open Access Journals (Sweden)

    Edson Ampélio Pozza


    Full Text Available All essential nutrients can affect the incidence and severity of plant diseases. Although silicon (Si is not considered as an essential nutrient for plants, it stands out for its potential to decrease disease intensity in many crops. The mechanism of Si action in plant resistance is still unclear. Si deposition in plant cell walls raised the hypothesis of a possible physical barrier to pathogen penetration. However, the increased activity of phenolic compounds, polyphenol oxidases and peroxidases in plants treated with Si demonstrates the involvement of this element in the induction of plant defense responses. The studies examined in this review address the role of Si in disease control and the possible mechanisms involved in the mode of Si action in disease resistance in plants.

  12. Silicon nanomembranes for fingertip electronics (United States)

    Ying, Ming; Bonifas, Andrew P.; Lu, Nanshu; Su, Yewang; Li, Rui; Cheng, Huanyu; Ameen, Abid; Huang, Yonggang; Rogers, John A.


    We describe the use of semiconductor nanomaterials, advanced fabrication methods and unusual device designs for a class of electronics capable of integration onto the inner and outer surfaces of thin, elastomeric sheets in closed-tube geometries, specially formed for mounting on the fingertips. Multifunctional systems of this type allow electrotactile stimulation with electrode arrays multiplexed using silicon nanomembrane (Si NM) diodes, high-sensitivity strain monitoring with Si NM gauges, and tactile sensing with elastomeric capacitors. Analytical calculations and finite element modeling of the mechanics quantitatively capture the key behaviors during fabrication/assembly, mounting and use. The results provide design guidelines that highlight the importance of the NM geometry in achieving the required mechanical properties. This type of technology could be used in applications ranging from human-machine interfaces to ‘instrumented’ surgical gloves and many others.

  13. Schematic driven silicon photonics design (United States)

    Chrostowski, Lukas; Lu, Zeqin; Flückiger, Jonas; Pond, James; Klein, Jackson; Wang, Xu; Li, Sarah; Tai, Wei; Hsu, En Yao; Kim, Chan; Ferguson, John; Cone, Chris


    Electronic circuit designers commonly start their design process with a schematic, namely an abstract representation of the physical circuit. In integrated photonics on the other hand, it is very common for the design to begin at the physical component level. In order to build large integrated photonic systems, it is crucial to design using a schematic-driven approach. This includes simulations based on schematics, schematic-driven layout, layout versus schematic verification, and post-layout simulations. This paper describes such a design framework implemented using Mentor Graphics and Lumerical Solutions design tools. In addition, we describe challenges in silicon photonics related to manufacturing, and how these can be taken into account in simulations and how these impact circuit performance.

  14. Visualizing a silicon quantum computer (United States)

    Sanders, Barry C.; Hollenberg, Lloyd C. L.; Edmundson, Darran; Edmundson, Andrew


    Quantum computation is a fast-growing, multi-disciplinary research field. The purpose of a quantum computer is to execute quantum algorithms that efficiently solve computational problems intractable within the existing paradigm of 'classical' computing built on bits and Boolean gates. While collaboration between computer scientists, physicists, chemists, engineers, mathematicians and others is essential to the project's success, traditional disciplinary boundaries can hinder progress and make communicating the aims of quantum computing and future technologies difficult. We have developed a four minute animation as a tool for representing, understanding and communicating a silicon-based solid-state quantum computer to a variety of audiences, either as a stand-alone animation to be used by expert presenters or embedded into a longer movie as short animated sequences. The paper includes a generally applicable recipe for successful scientific animation production.

  15. Bimodal condensation silicone elastomers as dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Skov, Anne Ladegaard

    unimodal refers to that there is one polymer only in the system. As an alternative to unimodal networks there are the bimodal networks where two polymers with significantly different molecular weights are mixed with one crosslinker. [2]Silicone rubber can be divided into condensation type and addition type...... according to the curing reaction. The advantages of condensation silicones compared to addition are the relatively low cost, the curing rate largely being independent of temperature, the excellent adhesion, and the catalyst being nontoxic. [3]In this work, a series of bimodal condensation silicone...

  16. Quantum conductance in silicon quantum wires

    CERN Document Server

    Bagraev, N T; Klyachkin, L E; Malyarenko, A M; Gehlhoff, W; Ivanov, V K; Shelykh, I A


    The results of investigations of electron and hole quantum conductance staircase in silicon quantum wires are presented. The characteristics of self-ordering quantum wells of n- and p-types, which from on the silicon (100) surface in the nonequilibrium boron diffusion process, are analyzed. The results of investigations of the quantum conductance as the function of temperature, carrier concentration and modulation degree of silicon quantum wires are given. It is found out, that the quantum conductance of the one-dimensional channels is observed, for the first time, at an elevated temperature (T >= 77 K)

  17. Silicon photonics III systems and applications

    CERN Document Server

    Lockwood, David


    This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

  18. Silicon compounds in the Jupiter atmosphere (United States)

    Howland, G.; Harteck, P.; Reeves, R. R., Jr.


    The formation of colored silicon compounds under nonequilibrium conditions is discussed with reference to the composition of the Jupiter atmosphere. It is shown that many of these reactions produce strongly colored intermediates that are relatively stable and similar in appearance to those observed on Jupiter. It is suggested that the silicon compounds could substantially contribute to the colors observed on Jupiter. The colored intermediates may be the result of relatively rapid amorphous silicon monoxide formation in vertical atmospheric currents in the region near the red spot and in the red spot itself.

  19. Titanium catalyzed silicon nanowires and nanoplatelets

    Directory of Open Access Journals (Sweden)

    Mohammad A. U. Usman


    Full Text Available Silicon nanowires, nanoplatelets, and other morphologies resulted from silicon growth catalyzed by thin titanium layers. The nanowires have diameters down to 5 nm and lengths to tens of micrometers. The two-dimensional platelets, in some instances with filigreed, snow flake-like shapes, had thicknesses down to the 10 nm scale and spans to several micrometers. These platelets grew in a narrow temperature range around 900 celsius, apparently representing a new silicon crystallite morphology at this length scale. We surmise that the platelets grow with a faceted dendritic mechanism known for larger crystals nucleated by titanium silicide catalyst islands.

  20. Fluidized-Bed Cleaning of Silicon Particles (United States)

    Rohatgi, Naresh K.; Hsu, George C.


    Fluidized-bed chemical cleaning process developed to remove metallic impurities from small silicon particles. Particles (250 micrometer in size) utilized as seed material in silane pyrolysis process for production of 1-mm-size silicon. Product silicon (1 mm in size) used as raw material for fabrication of solar cells and other semiconductor devices. Principal cleaning step is wash in mixture of hydrochloric and nitric acids, leaching out metals and carrying them away as soluble chlorides. Particles fluidized by cleaning solution to assure good mixing and uniform wetting.

  1. Bond Testing for Effects of Silicone Contamination (United States)

    Plaia, James; Evans, Kurt


    In 2003 ATK Thiokol discovered that the smocks and coveralls worn by its operations personnel for safety and contamination control were themselves contaminated with a silicone defoamer and a silicone oil. As a growing list of items have been identified as having this form of contamination, it was desirable to devise a test method to determine if the contamination level detected could cause subsequent processing concerns. The smocks and coveralls could potentially contact bonding surfaces during processing so the test method focused on dry transfer of the silicone from the clothing to the bonding surface.

  2. Fabrication of thick silicon nitride blocks embedded in low-resistivity silicon substrates for radio frequency applications

    NARCIS (Netherlands)

    Fernandez, L.J.; Berenschot, Johan W.; Wiegerink, Remco J.; Flokstra, Jakob; Flokstra, Jan; Jansen, Henricus V.; Elwenspoek, Michael Curt


    Thick silicon nitride blocks embedded in silicon wafers were recently proposed as a substrate for RF devices. In this paper we show that deep trenches filled with silicon nitride—having thin slices of monocrystalline silicon in between—already result in a significantly improved RF behavior.

  3. All-silicon photonic crystal photoconductor on silicon-on-insulator at telecom wavelength. (United States)

    Haret, Laurent-Daniel; Checoury, Xavier; Han, Zheng; Boucaud, Philippe; Combrié, Sylvain; De Rossi, Alfredo


    We demonstrate an all-silicon photodetector working at telecom wavelength. The device is a simple metal-semiconductor-metal detector fabricated on silicon-on-insulator. A two-dimensional photonic crystal nanocavity (Q=60,000) is used to increase the response that arises from the linear and two-photon absorption of silicon. The responsivity of the detector is about 20 mA/W and its bandwidth is larger than 1 GHz.

  4. Antifuse with a single silicon-rich silicon nitride insulating layer (United States)

    Habermehl, Scott D.; Apodaca, Roger T.


    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  5. Silicon based dielectrics : growth, characterization, and applications in integrated optics


    Ay, Feridun


    Cataloged from PDF version of article. In recent years, growing attention has been paid to silicon based dielectrics, such as silicon oxynitrides, silicon nitrides, and semiconductor doped silicon oxides, all combined under the name silica on silicon technology. This attention has been motivated mainly due to their excellent optical properties such as well controlled refractive index and high transparency over a wide range of wavelength. In accordance with the main goal of t...

  6. SiCloud: an online education tool for silicon photonics (United States)

    Jiang, Cathy Y.; DeVore, Peter T. S.; Lonappan, Cejo Konuparamban; Adam, Jost; Jalali, Bahram


    The silicon photonics industry is projected to be a multibillion dollar industry driven by the growth of data centers. In this work, we present an interactive online tool for silicon photonics. Silicon Photonics Cloud ( is an easy to use instructional tool for optical properties of silicon and related materials, waveguide design and modal simulations as well as information capacity of silicon channels.

  7. Crystallization behavior of silicon quantum dots in a silicon nitride matrix. (United States)

    Ha, Rin; Kim, Shinho; Kim, Hyun Jong; Lee, Jung Chul; Bae, Jong-Seong; Kim, Yangdo


    Silicon quantum dot superlattice was fabricated by alternating deposition of silicon rich nitride (SRN) and Si3N4 layers using RF magnetron co-sputtering. Samples were then annealed at temperatures between 800 and 1,100 degrees C and characterized by grazing incident X-ray diffraction (GIXRD), transmission electron microscopy (TEM), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR). GIXRD and Raman analyses show that the formation of silicon quantum dots occurs with annealing above 1,100 degrees C for at least 60 minutes. As the annealing time increased the crystallization of silicon quantum dots was also increased. TEM images clearly showed SRN/Si3N4 superlattice structure and silicon quantum dots formation in SRN layers after annealing at 1,100 degrees C for more than 60 minutes. The changes in FTIR transmission spectra observed with annealing condition corresponded to the configuration of Si-N bonds. Crystallization of silicon quantum dots in a silicon nitride matrix started stabilizing after 60 minutes' annealing and approached completion after 120 minutes'. The systematic investigation of silicon quantum dots in a silicon nitride matrix and their properties for solar cell application are presented.

  8. Evidence for a silicon oxycarbide phase in the Nicalon silicon carbide fibre

    Energy Technology Data Exchange (ETDEWEB)

    Porte, L.; Sartre, A.


    The Nicalon silicon carbide fibre has been studied by X-ray photoelectron spectroscopy. Elements entering the fiber are carbon, silicon and oxygen. In addition to previously reported chemical entities (silicon carbide, silica and graphitic carbon) evidence is found of the presence of a new supplementary phase which is attributed to an intermediate silicon oxycarbide phase. As this phase is found to participate in very appreciable proportions to the composition of the fiber, some influence on the properties of this fiber can be anticipated. 17 references.

  9. Deep Ultraviolet Macroporous Silicon Filters Project (United States)

    National Aeronautics and Space Administration — This SBIR Phase I proposal describes a novel method to make deep and far UV optical filters from macroporous silicon. This type of filter consists of an array of...

  10. Meie ingel Silicon Valleys / Raigo Neudorf

    Index Scriptorium Estoniae

    Neudorf, Raigo


    Ettevõtluse Arendamise Sihtasutuse esinduse töölepanekust USAs Silicon Valleys räägib esinduse juht Andrus Viirg. Vt. ka: Eestlasi leidub San Franciscos omajagu; Muljetavaldav karjäär; USAga ammune tuttav

  11. Meie mees Silicon Valleys / Kertu Ruus

    Index Scriptorium Estoniae

    Ruus, Kertu, 1977-


    Ilmunud ka: Delovõje Vedomosti 5. dets. lk. 4. Peaminister Andrus Ansip avas Eesti Ettevõtluse Sihtasutuse esinduse Silicon Valley pealinnas San Joses. Vt. samas: Ränioru kliima on tehnoloogiasõbralik; Andrus Viirg

  12. Silicon based ultrafast optical waveform sampling

    DEFF Research Database (Denmark)

    Ji, Hua; Galili, Michael; Pu, Minhao


    A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode-locker as th......A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode......-locker as the sampling source. A clear eye-diagram of a 320 Gbit/s data signal is obtained. The temporal resolution of the sampling system is estimated to 360 fs....

  13. Apparatus for silicon nitride precursor solids recovery (United States)

    Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.


    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  14. Method for silicon nitride precursor solids recovery (United States)

    Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.


    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  15. Characterisation of adaptive fluidic silicone membrane lenses

    CSIR Research Space (South Africa)

    Schneider, F


    Full Text Available In this paper the auhtors compare the performance and optical quality of two types of adaptive fluidic silicone-membrane lenses. The membranes feature either a homogeneous thickness, or they are shaped resulting in an inhomogeneous cross...


    Directory of Open Access Journals (Sweden)

    V. Ju. Stetsenko


    Full Text Available It is shown that antifriction aluminium-silicon alloy is perspective material for change of the parts of heavy and expensive bronze in different frictional units of machines and mechanisms.

  17. Silicon Wafer X-ray Mirror Project (United States)

    National Aeronautics and Space Administration — In this one year research project, we propose to do the following four tasks; (1) Design the silicon wafer X-ray mirror demo unit and develop a ray-tracing code to...

  18. Lithium ion batteries based on nanoporous silicon (United States)

    Tolbert, Sarah H.; Nemanick, Eric J.; Kang, Chris Byung-Hwa


    A lithium ion battery that incorporates an anode formed from a Group IV semiconductor material such as porous silicon is disclosed. The battery includes a cathode, and an anode comprising porous silicon. In some embodiments, the anode is present in the form of a nanowire, a film, or a powder, the porous silicon having a pore diameters within the range between 2 nm and 100 nm and an average wall thickness of within the range between 1 nm and 100 nm. The lithium ion battery further includes, in some embodiments, a non-aqueous lithium containing electrolyte. Lithium ion batteries incorporating a porous silicon anode demonstrate have high, stable lithium alloying capacity over many cycles.

  19. Mesoporous Silicon Far Infrared Filters Project (United States)

    National Aeronautics and Space Administration — This SBIR Phase I proposal describes a novel method to make optical filters based on mesoporous silicon multilayers, for use at cold temperatures in the far infrared...

  20. Thermoelectric Properties of Silicon Microchannel Plates Structures

    Energy Technology Data Exchange (ETDEWEB)

    Ci, P L; Shi, J; Wang, F; Sun, L; Xu, S H; Yang, P X; Wang, L W [Laboratory of Polar Materials and Devices, Ministry of Education, and Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Chu, Paul K, E-mail: [Department of Physics and Material Sciences, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong)


    We have fabricated silicon microchannel plates (MCPs) by photo-assisted electrochemical etching (PAECE) and determined the thermoelectric properties by measuring the Seebeck coefficient of the samples. The samples are composed of regular arrayed lattices with a width of about 5 {mu}m and spacing of about 1 {mu}m. The Seebeck coefficient along the edge of the lattice is 466 {mu}V/K. The silicon MCPs are potential materials for power generation and refrigeration. After oxidation from 30 minutes to 70 minutes and removing the silicon dioxide layer by buffered hydrofluoric acid, the samples show an improved coefficient as high as 1019 {mu}V/K after repeating oxidation and etching 5 times. Our results show that the Seebeck coefficient increases when the wall of the silicon MCPs is thinned.

  1. Semiconductors and semimetals oxygen in silicon

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Shimura, Fumio


    This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen.Key Features* Comprehensive study of the behavior of oxygen in silicon* Discusses silicon crystals for VLSI and ULSI applications* Thorough coverage from crystal growth to device fabrication* Edited by technical experts in the field* Written by recognized authorities from industrial and academic institutions* Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research* 297 original line drawings

  2. Core-shell silicon nanowire solar cells. (United States)

    Adachi, M M; Anantram, M P; Karim, K S


    Silicon nanowires can enhance broadband optical absorption and reduce radial carrier collection distances in solar cell devices. Arrays of disordered nanowires grown by vapor-liquid-solid method are attractive because they can be grown on low-cost substrates such as glass, and are large area compatible. Here, we experimentally demonstrate that an array of disordered silicon nanowires surrounded by a thin transparent conductive oxide has both low diffuse and specular reflection with total values as low as nanowire facilitates enhancement in external quantum efficiency using two different active shell materials: amorphous silicon and nanocrystalline silicon. As a result, the core-shell nanowire device exhibits a short-circuit current enhancement of 15% with an amorphous Si shell and 26% with a nanocrystalline Si shell compared to their corresponding planar devices.

  3. The two sides of silicon detectors

    CERN Document Server

    Devine, S R


    /p/n sup + and essentially two p-n junctions within one device. With increasing bias voltage, as the electric field is extending into the detector bulk from opposite sides of the silicon detector, there are two distinct depletion regions that collect charge signal independently. Summing the signal charge from the two regions, one is able to reconstruct the initial energy of the incident particle. From Transient Current measurements it is apparent that E-field manipulation is possible by excess carrier injection, enabling a high enough E-field to extend across the width of the detector, allowing for efficient charge collection. Results are presented on in situ irradiation of silicon detector's at cryogenic temperature. The results show that irradiation at cryogenic temperatures does not detrimentally effect a silicon detectors performance when compared to its irradiation at room temperature. Operation of silicon devices at cryogenic temperatures offers the advantage of reducing radiation-induced leakage curren...

  4. Some disconnected speculations on slicing silicon (United States)

    Iles, P. A.


    The basic principles for qualifying silicon wafering methods are summarized, and unconventional methods of wafering was discussed. Methods of cleaving analogous to diamond cutting, geological processes employing the expansion of freezing water, and karate chops are touched upon.

  5. Some disconnected speculations on slicing silicon (United States)

    Iles, P. A.


    The basic principles for qualifying silicon wafering methods are summarized, and unconventional methods of wafering was discussed. Methods of cleaving analogous to diamond cutting, geological processes employing the expansion of freezing water, and karate chops are touched upon.

  6. Limits on silicon nanoelectronics for terascale integration. (United States)

    Meindl, J D; Chen, Q; Davis, J A


    Throughout the past four decades, silicon semiconductor technology has advanced at exponential rates in both performance and productivity. Concerns have been raised, however, that the limits of silicon technology may soon be reached. Analysis of fundamental, material, device, circuit, and system limits reveals that silicon technology has an enormous remaining potential to achieve terascale integration (TSI) of more than 1 trillion transistors per chip. Such massive-scale integration is feasible assuming the development and economical mass production of double-gate metal-oxide-semiconductor field effect transistors with gate oxide thickness of about 1 nanometer, silicon channel thickness of about 3 nanometers, and channel length of about 10 nanometers. The development of interconnecting wires for these transistors presents a major challenge to the achievement of nanoelectronics for TSI.

  7. Multispectral imaging with vertical silicon nanowires. (United States)

    Park, Hyunsung; Crozier, Kenneth B


    Multispectral imaging is a powerful tool that extends the capabilities of the human eye. However, multispectral imaging systems generally are expensive and bulky, and multiple exposures are needed. Here, we report the demonstration of a compact multispectral imaging system that uses vertical silicon nanowires to realize a filter array. Multiple filter functions covering visible to near-infrared (NIR) wavelengths are simultaneously defined in a single lithography step using a single material (silicon). Nanowires are then etched and embedded into polydimethylsiloxane (PDMS), thereby realizing a device with eight filter functions. By attaching it to a monochrome silicon image sensor, we successfully realize an all-silicon multispectral imaging system. We demonstrate visible and NIR imaging. We show that the latter is highly sensitive to vegetation and furthermore enables imaging through objects opaque to the eye.

  8. High-efficiency crystalline silicon technology development (United States)

    Prince, M. B.


    The rationale for pursuing high efficiency crystalline silicon technology research is discussed. Photovoltaic energy systems are reviewed as to their cost effectiveness and their competitiveness with other energy systems. The parameters of energy system life are listed and briefly reviewed.

  9. Automotive Radar Sensors in Silicon Technologies

    CERN Document Server

    Jain, Vipul


    This book presents architectures and design techniques for mm-wave automotive radar transceivers. Several fully-integrated transceivers and receivers operating at 22-29 GHz and 77-81 GHz are demonstrated in both CMOS and SiGe BiCMOS technologies. Excellent performance is achieved indicating the suitability of silicon technologies for automotive radar sensors.  This book bridges an existing gap between information available on dependable system/architecture design and circuit design.  It provides the background of the field and detailed description of recent research and development of silicon-based radar sensors.  System-level requirements and circuit topologies for radar transceivers are described in detail. Holistic approaches towards designing radar sensors are validated with several examples of highly-integrated radar ICs in silicon technologies. Circuit techniques to design millimeter-wave circuits in silicon technologies are discussed in depth.  Describes concepts and fundamentals of automotive rada...

  10. Silicon Wafer X-ray Mirror Project (United States)

    National Aeronautics and Space Administration — In this one year research project, we propose to do the following four tasks;(1) Design the silicon wafer X-ray mirror demo unit and develop a ray-tracing code to...

  11. Silicon technologies ion implantation and thermal treatment

    CERN Document Server

    Baudrant, Annie


    The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.

  12. Development of an economical silicon solar cell (United States)

    Lindmayer, J.


    The growth of electronically viable silicon films on inexpensive foreign substrates is studied, with the objective of creating a technology to radically reduce the overall cost of the silicon employed in photovoltaic solar energy conversion. The approach employed is to enhance crystalline ordering during film nucleation by confining arriving silicon atoms to a narrow band traveling across a substrate, i.e., the Lateral Growth Technique (LGT). The efforts have employed physical vapor deposition of silicon in a vacuum evaporator on glass and metal substrates with both slit masks and single defining edges, and subsequent chemical vapor deposition (CVD) of thicker films on these thin film structures by pyrolysis of silane at higher temperatures.

  13. Antireflection/Passivation Step For Silicon Cell (United States)

    Crotty, Gerald T.; Kachare, Akaram H.; Daud, Taher


    New process excludes usual silicon oxide passivation. Changes in principal electrical parameters during two kinds of processing suggest antireflection treatment almost as effective as oxide treatment in passivating cells. Does so without disadvantages of SiOx passivation.

  14. Silicon Germanium Quantum Well Solar Cell Project (United States)

    National Aeronautics and Space Administration — Quantum-well structures embodied on single crystal silicon germanium drastically enhanced carrier mobilities.  The cell-to-cell circuits of quantum-well PV...

  15. P-type silicon drift detectors

    Energy Technology Data Exchange (ETDEWEB)

    Walton, J.T.; Krieger, B.; Krofcheck, D.; O`Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.


    Preliminary results on 16 CM{sup 2}, position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 {times} l0{sup 6} s{sup {minus}1} is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 {mu}m to 1200 {mu}m. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed.

  16. Silicon nanowire properties from theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Scheel, H.M.


    Silicon has played an outstanding role at the end of the 20th century and is still one of the most important components for micro computing. In recent years the ability to miniaturize semiconductor structures and devices to nanometer length scales has opened an all new field of physics, i.e. nanoscience. Simply by miniaturizing the size of semiconducting structures the physics describing electronic or vibronic properties has to be altered fundamentally leading to new phenomena and interesting effects. For silicon the two major mile-stones where the fabrication of porous silicon and later the fabrication of free-standing silicon nanowires. The intense research concerning the fabrication of silicon nanowires has led to single crystalline nanowires with diameters of only a few nanometers. The hope that drove these intense research efforts where to find efficient photonic properties in these quantized systems. In the first part of this work detailed theoretical investigations are presented for the commonly observed ([111] and [11 anti 2]) representatives of free-standing and for the most frequently discussed ([001]) silicon nanowires not (so far) observed as free standing wires. Using density functional theory in the local density approximation the electronic properties as well as the structural changes due to the reduced dimensionality of silicon nanowires are calculated and discussed. The comparison to recent experimental, scanning tunneling experiments reveal a fundamental discrepancy between the calculated band structures and experimental findings. With our results we are able to explain these differences. Raman investigations on silicon nanowires where in a state of controversial discussion about the origin of observed red shifted spectra. Various contributions like quantum confinement, photo excitation and thermal effects where discussed. The second part of this thesis contributes to this discussion, with detailed laser power dependent Raman spectroscopic

  17. Magnetic and electric hotspots with silicon nanodimers. (United States)

    Bakker, Reuben M; Permyakov, Dmitry; Yu, Ye Feng; Markovich, Dmitry; Paniagua-Domínguez, Ramón; Gonzaga, Leonard; Samusev, Anton; Kivshar, Yuri; Luk'yanchuk, Boris; Kuznetsov, Arseniy I


    The study of the resonant behavior of silicon nanostructures provides a new route for achieving efficient control of both electric and magnetic components of light. We demonstrate experimentally and numerically that enhancement of localized electric and magnetic fields can be achieved in a silicon nanodimer. For the first time, we experimentally observe hotspots of the magnetic field at visible wavelengths for light polarized across the nanodimer's primary axis, using near-field scanning optical microscopy.

  18. Silicon photonic thermometer operating on multiple polarizations

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Wang, Xiaoyan; Frandsen, Lars Hagedorn


    A silicon photonics optical thermometer simultaneously operating on the multiple polarizations is designed and experimentally demonstrated. Measured sensitivities are 86pm/°C and 48pm/°C for the transverse-electric and transverse-magnetic polarizations, respectively.......A silicon photonics optical thermometer simultaneously operating on the multiple polarizations is designed and experimentally demonstrated. Measured sensitivities are 86pm/°C and 48pm/°C for the transverse-electric and transverse-magnetic polarizations, respectively....

  19. University Crystalline Silicon Photovoltaics Research and Development

    Energy Technology Data Exchange (ETDEWEB)

    Ajeet Rohatgi; Vijay Yelundur; Abasifreke Ebong; Dong Seop Kim


    The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.

  20. Silicon Nanostructures, Excitonic Interactions, Laser Consequences (United States)


    Optically pumped laser emission is achieved at cryogenic temperatures (ៅK) on carbon- implanted nano -pattemed silicon-on-insulator. By using ion...DISTRIBUTIONIAVAILABIUTY STATEMENT Approved for Public Release; distribution is Unlimited 13. SUPPLEMENTARY NOTES 14. ABSTRACT Optically pumped laser achieved at cryogenic temperatures (ៅK) on carbon-implanted nano -patterned silicon-on-insulator. By using ion-implantation and solid-phase