WorldWideScience

Sample records for athermal silicon microring

  1. Towards athermal optically-interconnected computing system using slotted silicon microring resonators and RF-photonic comb generation

    OpenAIRE

    Zhou, Linjie; Kashiwagi, Ken; Okamoto, Katsunari; Scott, R. P.; Fontaine, N.K.; Dan DING; Akella, Venkatesh; Yoo, S. J.

    2009-01-01

    We report that completely athermal design of a slotted silicon waveguide is possible by combining the negative thermo-optic (TO) coefficient of, for example, polymethyl methacrylate (PMMA) with the positive TO coefficient of silicon. When used in a microring resonator structure, the filled overcladding slotted waveguide and the unfilled (air-filled) overcladding slotted waveguide can both achieve athermal characteristics. Simulations indicate a wide range of realizations with proper design pa...

  2. Towards athermal optically-interconnected computing system using slotted silicon microring resonators and RF-photonic comb generation

    Science.gov (United States)

    Zhou, Linjie; Kashiwagi, Ken; Okamoto, Katsunari; Scott, R. P.; Fontaine, N. K.; Ding, Dan; Akella, Venkatesh; Yoo, S. J. B.

    2009-06-01

    We report that completely athermal design of a slotted silicon waveguide is possible by combining the negative thermo-optic (TO) coefficient of, for example, polymethyl methacrylate (PMMA) with the positive TO coefficient of silicon. When used in a microring resonator structure, the filled overcladding slotted waveguide and the unfilled (air-filled) overcladding slotted waveguide can both achieve athermal characteristics. Simulations indicate a wide range of realizations with proper design parameters of the slotted waveguides, namely, the silicon strip and slot widths. Preliminary experimental results on fabricated devices demonstrate that the temperature dependence is reduced from 91 pm/°C for a regular microring resonator to 52 pm/°C for the PMMA-clad microring resonator. Completely athermal realization is expectable in similar devices with improved fabrication techniques. For the external optical source, we demonstrate a stable 3.5 THz wide (175 modes×20 GHz) optical comb source with nearly flat spectral phase. Adjustable mode spacing and wavelength tunability across the C-band are maintained so that comb lines can be matched to the specified wavelength grid of the computing system. With such schemes, temperature controls of individual optical components in the optically interconnected computing chips become unnecessary, greatly reducing the complexity of the computing system.

  3. Linear signal processing using silicon micro-ring resonators

    DEFF Research Database (Denmark)

    Peucheret, Christophe; Ding, Yunhong; Ou, Haiyan;

    2012-01-01

    We review our recent achievements on the use of silicon micro-ring resonators for linear optical signal processing applications, including modulation format conversion, phase-to-intensity modulation conversion and waveform shaping.......We review our recent achievements on the use of silicon micro-ring resonators for linear optical signal processing applications, including modulation format conversion, phase-to-intensity modulation conversion and waveform shaping....

  4. Controlling carbon nanotube photoluminescence using silicon microring resonators

    OpenAIRE

    Noury, Adrien; Roux, Xavier Le; Vivien, Laurent; Izard, Nicolas

    2015-01-01

    We report on coupling between semiconducting single-wall carbon nanotubes (s-SWNT) photoluminescence and silicon microring resonators. Polyfluorene extracted s-SWNT deposited on such resonators exhibit sharp emission peaks, due to interaction with the cavity modes of the microring resonators. Ring resonators with radius of 5 {\\mu}m and 10 {\\mu}m were used, reaching quality factors up to 4000 in emission. These are among the highest values reported for carbon nanotubes coupled with an integrat...

  5. Controlling carbon nanotube photoluminescence using silicon microring resonators

    CERN Document Server

    Noury, Adrien; Vivien, Laurent; Izard, Nicolas

    2015-01-01

    We report on coupling between semiconducting single-wall carbon nanotubes (s-SWNT) photoluminescence and silicon microring resonators. Polyfluorene extracted s-SWNT deposited on such resonators exhibit sharp emission peaks, due to interaction with the cavity modes of the microring resonators. Ring resonators with radius of 5 {\\mu}m and 10 {\\mu}m were used, reaching quality factors up to 4000 in emission. These are among the highest values reported for carbon nanotubes coupled with an integrated cavity on silicon platform, which open up the possibility to build s-SWNT based efficient light source on silicon.

  6. Bandwidth and wavelength-tunable optical bandpass filter based on silicon microring-MZI structure

    DEFF Research Database (Denmark)

    Ding, Yunhong; Pu, Minhao; Liu, Liu;

    2011-01-01

    A novel and simple bandwidth and wavelength-tunable optical bandpass filter based on silicon microrings in a Mach-Zehnder interferometer (MZI) structure is proposed and demonstrated. In this filter design, the drop transmissions of two microring resonators are combined to provide the desired...

  7. All-optical 10 Gb/s AND logic gate in a silicon microring resonator

    DEFF Research Database (Denmark)

    Xiong, Meng; Lei, Lei; Ding, Yunhong;

    2013-01-01

    An all-optical AND logic gate in a single silicon microring resonator is experimentally demonstrated at 10 Gb/s with 50% RZ-OOK signals. By setting the wavelengths of two intensity-modulated input pumps on the resonances of the microring resonator, field-enhanced four-wave mixing with a total input...

  8. Picosecond all-optical switching in hydrogenated amorphous silicon microring resonators

    CERN Document Server

    Pelc, Jason S; Vo, Sonny; Santori, Charles; Fattal, David A; Beausoleil, Raymond G

    2014-01-01

    We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microring. In comparison with telecom-band optical switching in crystalline silicon microrings, a-Si:H exhibits substantially higher switching speeds due to reduced impact of free-carrier processes.

  9. Microwave photonic phase shifter based on tunable silicon-on-insulator microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi; Frandsen, Lars Hagedorn; Ou, Haiyan; Yvind, Kresten; Hvam, Jørn Märcher

    We demonstrate a microwave photonic phase shifter based on an electrically tunable silicon-on-insulator microring resonator. A continuously tunable phase shift of up to 315° at a microwave frequency of 15GHz is obtained.......We demonstrate a microwave photonic phase shifter based on an electrically tunable silicon-on-insulator microring resonator. A continuously tunable phase shift of up to 315° at a microwave frequency of 15GHz is obtained....

  10. Silicon micro-ring tunable laser for coherent optical communication.

    Science.gov (United States)

    Li, Shiyu; Zhang, Di; Zhao, Jianyi; Yang, Qi; Xiao, Xi; Hu, Shenglei; Wang, Lei; Li, Miaofeng; Tang, Xuesheng; Qiu, Ying; Luo, Ming; Yu, Shaohua

    2016-03-21

    A compact external cavity tunable laser based on a silicon hybrid micro-ring resonator is demonstrated. A theoretical model is also employed for design and analysis of the wavelength tuning performance of the device. In this model, the gain section of the device is simulated by a conventional multimode rate equation model, whereas all rest passive sections are modeled by the frequency domain method. Experimental results have shown that the output power of this device can reach 29 mW, with a linewidth less than 150 kHz. The tuning range is more than 17 nm in C-band with 60 dB side-mode-suppression-ratio (SMSR). This device shows a comparable performance with the commercial narrow linewidth laser as the source in coherent transmission systems. PMID:27136825

  11. 12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators

    Science.gov (United States)

    Xu, Qianfan; Manipatruni, Sasikanth; Schmidt, Brad; Shakya, Jagat; Lipson, Michal

    2007-01-01

    We show a scheme for achieving high-speed operation for carrier-injection based silicon electro-optical modulator, which is optimized for small size and high modulation depth. The performance of the device is analyzed theoretically and a 12.5-Gbit/s modulation with high extinction ratio >9dB is demonstrated experimentally using a silicon micro-ring modulator.

  12. Simulation of 60-GHz microwave photonic filters based on serially coupled silicon microring resonators

    Institute of Scientific and Technical Information of China (English)

    Dengke Zhang; Xue Feng; Yidong Huang

    2012-01-01

    The microwave photonic filters (MPFs) based on serially coupled silicon microring resonators (MRRs) are theoretically analyzed for the application of 60-GHz millimeter wave wireless personal area networks.This is achieved by calculating the improvement of bit error ratio (BER).According to the simulation results,the requirement of signal-to-noise ratio (SNR) of the received data can be reduced by 14 dB for the same BER with and without MPFs.The performance of the MPF with five serially coupled microring structures is better than that of the MPF with a single microring,owing to the improvement of the shape factor.%The microwave photonic filters (MPFs) based on serially coupled silicon microring resonators (MRRs) are theoretically analyzed for the application of 60-GHz millimeter wave wireless personal area networks. This is achieved by calculating the improvement of bit error ratio (BER). According to the simulation results, the requirement of signal-to-noise ratio (SNR) of the received data can be reduced by 14 dB for the same BER with and without MPFs. The performance of the MPF with five serially coupled microring structures is better than that of the MPF with a single microring, owing to the improvement of the shape factor.

  13. 360° tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Xue, Weiqi; Liu, Liu; Ou, Haiyan; Yvind, Kresten; Hvam, Jørn Märcher

    2010-01-01

    We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained......We demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator dual-microring resonators. A quasi-linear phase shift of 360° with ~2dB radio frequency power variation at a microwave frequency of 40GHz is obtained...

  14. Illuminating the future of silicon photonics: optical coupling of carbon nanotubes to microrings

    International Nuclear Information System (INIS)

    Advances in carbon nanotube material quality and processing techniques have led to an increased interest in nanotube photonics. In particular, emission in the telecommunication wavelengths makes nanotubes compatible with silicon photonics. Noury et al (2014 Nanotechnology 25 215201) have reported on carbon nanotube photoluminescence coupled to silicon microring resonators, underscoring the advantage of combining carbon nanotube emitters with silicon photonics. Their results open up the possibility of using nanotubes in other waveguide-based devices, taking advantage of well-established technologies. (viewpoint)

  15. Silicon photonic micro-ring resonators to sense strain and ultrasound

    NARCIS (Netherlands)

    Westerveld, W.J.

    2014-01-01

    We demonstrated that photonic micro-ring resonators can be used in micro-machined ultrasound microphones. This might cause a breakthrough in array transducers for ultrasonography; first because optical multiplexing allows array interrogation via one optical fiber and second because the silicon-on-in

  16. Tunable microwave phase shifter based on silicon-on-insulator microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi; Ding, Yunhong; Frandsen, Lars Hagedorn; Ou, Haiyan; Yvind, Kresten; Hvam, Jørn Märcher

    2010-01-01

    We demonstrate microwave phase shifters based on electrically tunable silicon-on-insulator microring resonators (MRRs). MRRs with different quality factors are fabricated and tested. A continuously tunable phase shift of up to 336 at a microwave frequency of 40 GHz is obtained using a high...

  17. A large bandwidth photonic delay line using passive cascaded silicon-on-insulator microring resonators

    International Nuclear Information System (INIS)

    This paper investigated the design and the characterization of a photonic delay line based on passive cascaded silicon-on-insulator (SOI) microrings. We considered the compromise of group delay, bandwidth and insertion loss. A 3-stage double channel side-coupled integrated spaced sequence of resonator (SCISSOR) device was optimized by shifting the resonance of each microring and fabricated with electron beam lithography and dry etching. The group delay was measured to be 17 ps for non-return-to-zero signals at different bit rates and the bandwidth of 78 GHz was achieved. The experiment result agreed well with our simulation. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  18. Widely tunable microwave phase shifter based on silicon-on-insulator dual-microring resonator

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Xue, Weiqi; Ding, Yunhong; Ou, Haiyan; Yvind, Kresten; Hvam, Jørn Märcher

    2010-01-01

    We propose and demonstrate tunable microwave phase shifters based on electrically tunable silicon-on-insulator microring resonators. The phase-shifting range and the RF-power variation are analyzed. A maximum phase-shifting range of 0~600° is achieved by utilizing a dual-microring resonator. A...... quasi-linear phase shift of 360° with RF-power variation lower than 2dB and a continuous 270° phase shift without RF-power variation at a microwave frequency of 40GHz are also demonstrated....

  19. Photon pair generation from compact silicon microring resonators using microwatt-level pump powers.

    Science.gov (United States)

    Savanier, Marc; Kumar, Ranjeet; Mookherjea, Shayan

    2016-02-22

    Microring resonators made from silicon are becoming a popular microscale device format for generating photon pairs at telecommunications wavelengths at room temperature. In compact devices with a footprint less than 5 × 10-4 mm2, we demonstrate pair generation using only a few microwatts of average pump power. We discuss the role played by important parameters such as the loss, group-velocity dispersion and the ring-waveguide coupling coefficient in finding the optimum operating point for silicon microring pair generation. Silicon photonics can be fabricated using deep ultraviolet lithography wafer-scale fabrication processes, which is scalable and cost-effective. Such small devices and low pump power requirements, and the side-coupled waveguide geometry which uses an integrated waveguide, could be beneficial for future scaled-up architectures where many pair-generation devices are required on the same chip. PMID:26906993

  20. Photon pair generation from compact silicon microring resonators using microwatt-level pump powers

    CERN Document Server

    Savanier, Marc; Mookherjea, Shayan

    2015-01-01

    Microring resonators made from silicon, using deep ultraviolet lithography fabrication processes which are scalable and cost-effective, are becoming a popular microscale device format for generating photon pairs at telecommunications wavelengths at room temperature. In compact devices with a footprint less than $5\\times 10^{-4}$ mm$^2$, we demonstrate pair generation using only a few microwatts of average pump power. We discuss the role played by important parameters such as the loss, group-velocity dispersion and the ring-waveguide coupling coefficient in finding the optimum operating point for silicon microring pair generation. Such small devices and low pump power requirements could be beneficial for future scaled-up architectures with many pair-generation devices on the same chip, which will be required to create quasi-deterministic pure single photon sources from inherently statistical processes such as spontaneous four-wave mixing.

  1. Optical-biased modulator employing a single silicon micro-ring resonator

    Science.gov (United States)

    Yan, Siqi; Dong, Jianji; Zheng, Aoling; Yu, Yuan

    2016-06-01

    We propose and experimentally demonstrate an optical-biased modulator employing a single silicon micro-ring resonator. By adjusting optical bias, the micro-ring modulator is capable of generating several modulation formats, namely, on-off keying, binary phase shift keying and reversed on-off keying, at the speed of 0.4 Gbit/s with extinction ratio higher than 5 dB. Compared to the previous reported bias control approaches, the optical bias proposed in this study is a novel mechanism, which can be easily conducted without complicated integrated structures or redundant electrical devices. Meanwhile, optical bias can also effectively protect the vulnerable integrated silicon devices from possible damage induced by high direct current voltage.

  2. Performance of Kerr bistable memory in silicon nitride microring and silica microtoroid

    Science.gov (United States)

    Yoshiki, Wataru; Tanabe, Takasumi

    2014-12-01

    We quantitatively analyze the performance of optical memories based on Kerr bistability in microcavites. We model a silicon nitride microring and a silica toroid microcavity, and examine the performances of these cavities in an actual situation where there is a thermo-optic effect. Numerical simulations based on coupled mode theory and the thermal diffusion equation reveal that an input power of 1.8 W is necessary to achieve a Kerr bistable memory in a silicon nitride microring, while that of only 1.7 mW is necessary in a silica toroid microcavity. This result shows that the use of silica toroid microcavity is advantageous when we want to demonstrate a Kerr bistable memory operation with a reasonably low input power. In addition, we quantitatively investigate the trade-off between the required input power and the response speed of the device.

  3. Silicon photonic micro-ring resonators to sense strain and ultrasound

    OpenAIRE

    Westerveld, W. J.

    2014-01-01

    We demonstrated that photonic micro-ring resonators can be used in micro-machined ultrasound microphones. This might cause a breakthrough in array transducers for ultrasonography; first because optical multiplexing allows array interrogation via one optical fiber and second because the silicon-on-insulator technology allows cost-effective fabrication. To understand this microphone, all of its components were studied: fundamental theory of the photonic resonators, experimental characteristics ...

  4. Large-scale-integrated silicon photonics using microdisk and microring resonators

    Science.gov (United States)

    Poon, Andrew W.; Feng, Shaoqi; Cai, Hong; Luo, Xianshu; Chen, Hui

    2010-02-01

    We review our recent work on silicon photonic devices for on-chip optical interconnects and optofluidics. On the optical interconnects front, we demonstrate coupled-resonator optical waveguides with gapless inter-cavity coupling for on-chip wide-bandwidth high-order optical channel filters and optical delay lines. We propose a 5×5 matrix switch comprising two-dimensionally cascaded microring resonator-based electrooptic switches for network-on-chip applications and demonstrate a 2×2 matrix switch as a proof-of-concept. We demonstrate cavity-enhanced photocurrent generation in a p-i-n diode embedded microring resonator for wavelength-selective photodetection and monitoring on-chip optical networks. We also investigate a serial-cascaded double-microring-based silicon photonic circuit for high-speed on-chip clock-recovery applications. On the optofluidics front, we study silicon nitride based waveguides with integrated microfluidic channels for optical manipulation of microparticles.

  5. Ultra-high peak rejection notch microwave photonic filter using a single silicon microring resonator.

    Science.gov (United States)

    Long, Yun; Wang, Jian

    2015-07-13

    We propose a simple scheme to realize ultra-high peak rejection notch microwave photonic filter (MPF) based on a single silicon microring resonator (MRR). Using the combination of a conventional phase modulator (PM), a tunable bandpass filter (TBF), and a silicon MRR to manipulate the phase and amplitude of optical sidebands resulting in a signal cancellation at the RF notch filter frequency, we experimentally demonstrate a notch MPF with an ultra-high peak rejection beyond 60 dB. The frequency tunability of the proposed ultra-high peak rejection MPF is also demonstrated in the experiment. PMID:26191836

  6. Demonstration of a 3-bit optical digital-to-analog converter based on silicon microring resonators.

    Science.gov (United States)

    Yang, Lin; Ding, Jianfeng; Chen, Qiaoshan; Zhou, Ping; Zhang, Fanfan; Zhang, Lei

    2014-10-01

    We propose an N-bit optical digital-to-analog converter based on silicon microring resonators (MRRs), which can transform an N-bit electrical digital signal to an optical analog signal. A 3-bit optical digital-to-analog convertor is fabricated as proof of concept through a CMOS-compatible process on a silicon-on-insulator platform. The silicon MRRs are modulated through the electric-field-induced carrier injection in forward biased PN junctions embedded in the ring waveguides. The electro-optical 3-dB bandwidths of the silicon MRRs are approximately 800 MHz. The device works well at a speed of 500  MSample/s under driving voltage swings of 0.75 V. PMID:25360972

  7. Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

    Energy Technology Data Exchange (ETDEWEB)

    Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2015-09-28

    Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies, since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.

  8. Low power consumption silicon photonics tuning filters based on compound microring resonators

    Science.gov (United States)

    Vázquez, C.; Contreras, P.; Vargas, S.

    2013-02-01

    Scalable integrated optics platforms based on silicon-on-insulator allow to develop optics and electronics functions on the same chip. Developments in this area are fostered by its potential as an I/O technology that can meet the throughputs demand of future many-core processors. Most of the optical interconnect designs rely on small footprint and high power efficiency microring resonators. They are used to filter out individual channels from a shared bus guide. Second-order microring filters enable denser channel packing by having sharper pass-band to stop-band slopes. Taking advantage of using a single physical ring with clockwise and counter-clockwise propagation, we implement second order filters with lower tuning energy consumption as being more resilient to some fabrication errors. Cascade ability, remote stabilization potential, energy efficiency along with simple design equations on coupling coefficients are described. We design second-order filters with FWHM from 45 GHz to 20 GHz, crosstalk between channels from -40 dB to -20 dB for different channel spacing at a specific FSR, with energy efficiencies of single ring configurations and compatible with silicon-on-insulator (SOI) state of the art platforms.

  9. Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

    CERN Document Server

    Ding, Yunhong; Xiao, Sanshui; Hu, Hao; Frandsen, Lars Hagedorn; Mortensen, N Asger; Yvind, Kresten

    2015-01-01

    Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.

  10. Tunable complex-valued multi-tap microwave photonic filter based on single silicon-oninsulator microring resonator

    DEFF Research Database (Denmark)

    Lloret, Juan; Sancho, Juan; Pu, Minhao;

    2011-01-01

    A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonator is presented. The degree of tunability of the approach involving two, three and four taps is theoretical and experimentally characterized, respectively. The constraints of...... exploiting the optical phase transfer function of a microring resonator aiming at implementing complex-valued multi-tap filtering schemes are also reported. The trade-off between the degree of tunability without changing the free spectral range and the number of taps is studied in-depth. Different window...... based scenarios are evaluated for improving the filter performance in terms of the side-lobe level....

  11. Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits

    International Nuclear Information System (INIS)

    We propose a novel resonator containing an elliptical microring based on a silicon-on-insulator platform. Simulations using the three-dimensional finite-difference time-domain method show that the novel elliptical microring can efficiently enhance the mode coupling between straight bus waveguides and resonator waveguides or between adjacent resonators while preserving relatively high intrinsic quality factors with large free spectral range. The proposed resonator would be an alternative choice for future high-density integrated photonic circuits. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  12. Development of silicon photonic microring resonator biosensors for multiplexed cytokine assays and in vitro diagnostics

    Science.gov (United States)

    Luchansky, Matthew Sam

    In order to guide critical care therapies that are personalized to a patient's unique disease state, a diagnostic or theranostic medical device must quickly provide a detailed biomolecular understanding of disease onset and progression. This detailed molecular understanding of cellular processes and pathways requires the ability to measure multiple analytes in parallel. Though many traditional sensing technologies for biomarker analysis and fundamental biological studies (i.e. enzyme-linked immunosorbent assays, real-time polymerase chain reaction, etc.) rely on single-parameter measurements, it has become increasingly clear that the inherent complexity of many human illnesses and pathways necessitates quantitative and multiparameter analysis of biological samples. Currently used analytical methods are deficient in that they often provide either highly quantitative data for a single biomarker or qualitative data for many targets, but methods that simultaneously provide highly quantitative analysis of many targets have yet to be adequately developed. Fields such as medical diagnostics and cellular biology would benefit greatly from a technology that enables rapid, quantitative and reproducible assays for many targets within a single sample. In an effort to fill this unmet need, this doctoral dissertation describes the development of a clinically translational biosensing technology based on silicon photonics and developed in the chemistry research laboratory of Ryan C. Bailey. Silicon photonic microring resonators, a class of high-Q optical sensors, represent a promising platform for rapid, multiparameter in vitro measurements. The original device design utilizes 32-ring arrays for real-time biomolecular sensing without fluorescent labels, and these optical biosensors display great potential for more highly multiplexed (100s-1000s) measurements based on the impressive scalability of silicon device fabrication. Though this technology can be used to detect a variety of

  13. Compact continuously tunable microwave photonic filters based on cascaded silicon microring resonators

    Science.gov (United States)

    Liu, Li; He, Mengying; Dong, Jianji

    2016-03-01

    We propose and experimentally demonstrate a photonic approach to achieving tunable bandpass microwave photonic filters (MPFs) based on cascaded microring resonators (CMRRs). The optical spectrum of the silicon CMRRs could offer two bandpass response to separately filter the optical carrier and one of the sidebands generated by the phase modulation. Thus we could achieve a bandpass MPF. Moreover, as the central frequencies and bandwidths of the two bandpass response can be tuned by adjusting the laser wavelength and voltages applied on one MRR, the central operating frequency or 3-dB bandwidth of the MPF can be continuously tuned in wide ranges respectively. A proof-of-concept experiment illustrates a central frequency tuning range from 19 GHz to 40 GHz, and a wide bandwidth tuning range from 5.5 GHz to 17.5 GHz.

  14. All-optical tuning of a nonlinear silicon microring assisted microwave photonic filter: theory and experiment.

    Science.gov (United States)

    Long, Yun; Wang, Jian

    2015-07-13

    We propose and demonstrate an all-optical tuning mechanism to tune the response of a microwave photonic filter (MPF) based on a nonlinear silicon microring resonator (MRR). The tuning mechanism relies on the optical nonlinearities induced resonant wavelength shift in the silicon MRR, leading to the change of frequency difference between the optical carrier frequency and resonant frequency of the silicon MRR. A detailed theoretical model is established to describe the operation of the proposed all-optical tunable MPF. Two cases are studied in the experiment, i.e. the optical carrier frequency is located at the left or right side of the MRR resonant frequency. Both forward and backward pumping configurations in each case are demonstrated. Using the fabricated silicon MRR and exploiting light to control light, the central frequency of the notch MPF can be flexibly tuned by adjusting the pump light power. Moreover, the presented all-optical tuning mechanism might also facilitate interesting applications such as microwave switching and microwave modulation. PMID:26191838

  15. Non-blocking four-port optical router based on thermooptic silicon microrings

    Science.gov (United States)

    Dang, Pei-pei; Li, Cui-ting; Zheng, Wen-xue; Zheng, Chuan-tao; Wang, Yi-ding

    2016-07-01

    By using silicon-on-insulator (SOI) platform, 12 channel waveguides, and four parallel-coupling one-microring resonator routing elements, a non-blocking four-port optical router is proposed. Structure design and optimization are performed on the routing elements at 1 550 nm. At drop state with a power consumption of 0 mW, the insertion loss of the drop port is less than 1.12 dB, and the crosstalk between the two output ports is less than -28 dB; at through state with a power consumption of 22 mW, the insertion loss of the through port is less than 0.45 dB, and the crosstalk between the two output ports is below -21 dB. Routing topology and function are demonstrated for the four-port optical router. The router can work at nine non-blocking routing states using the thermo-optic (TO) effect of silicon for tuning the resonance of each switching element. Detailed characterizations are presented, including output spectrum, insertion loss, and crosstalk. According to the analysis on all the data links of the router, the insertion loss is within the range of 0.13—3.36 dB, and the crosstalk is less than -19.46 dB. The router can meet the need of large-scale optical network-on-chip (ONoC).

  16. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    Science.gov (United States)

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  17. High-Q micro-ring resonators and grating couplers for silicon-on-insulator integrated photonic circuits

    International Nuclear Information System (INIS)

    An ultra-small integrated photonic circuit has been proposed, which incorporates a high-quality-factor passive micro-ring resonator (MR) linked to a vertical grating coupler on a standard silicon-on-insulator (SOI) substrate. The experimental results demonstrate that the MR propagation loss is 0.532 dB/cm with a 10 μm radius ring resonator, the intrinsic quality factor is as high as 202.000, the waveguide grating wavelength response curve is a 1 dB bandwidth of 40 nm at 1540 nm telecommunication wavelengths, and the measured fiber-to-fiber coupling loss is 10 dB. Furthermore, the resonator wavelength temperature dependence of the 450 nm wide micro-ring resonator is 54.1 pm/°C. Such vertical grating coupler and low loss MR-integrated components greatly promote a key element in biosensors and high-speed interconnect communication applications. (semiconductor integrated circuits)

  18. Tunable complex-valued multi-tap microwave photonic filter based on single silicon-on-insulator microring resonator.

    Science.gov (United States)

    Lloret, Juan; Sancho, Juan; Pu, Minhao; Gasulla, Ivana; Yvind, Kresten; Sales, Salvador; Capmany, José

    2011-06-20

    A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonator is presented. The degree of tunability of the approach involving two, three and four taps is theoretical and experimentally characterized, respectively. The constraints of exploiting the optical phase transfer function of a microring resonator aiming at implementing complex-valued multi-tap filtering schemes are also reported. The trade-off between the degree of tunability without changing the free spectral range and the number of taps is studied in-depth. Different window based scenarios are evaluated for improving the filter performance in terms of the side-lobe level. PMID:21716478

  19. Wavelength tuning and stabilization of microring-based filters using silicon in-resonator photoconductive heaters

    CERN Document Server

    Jayatilleka, Hasitha; Guillen-Torres, Miguel Angel; Caverley, Michael; Hu, Ricky; Jaeger, Nicolas A F; Chrostowski, Lukas; Shekhar, Sudip

    2015-01-01

    We demonstrate that n-doped resistive heaters in silicon waveguides show photoconductive effects having responsivities as high as 271 mA/W. These photoconductive heaters, integrated into microring resonator (MRR)-based filters, were used to automatically tune and stabilize the filter's resonance wavelength to the input laser's wavelength. This is achieved without requiring dedicated defect implantations, additional material depositions, dedicated photodetectors, or optical power tap-outs. Automatic wavelength stabilization of first-order MRR and second-order series-coupled MRR filters is experimentally demonstrated. Open eye diagrams were obtained for data transmission at 12.5 Gb/s while the temperature was varied by 5 C at a rate of 0.28 C/s. We theoretically show that series-coupled MRR-based filters of any order can be automatically tuned by using photoconductive heaters to monitor the light intensity in each MRR, and sequentially aligning the resonance of each MRR to the laser's wavelength.

  20. Tunable complex-valued multi-tap microwave photonic filter based on single silicon-oninsulator microring resonator

    OpenAIRE

    Lloret J.; Sancho J.; Pu M.; Gasulla I.; YvindSalvador K.; Capmany S.

    2011-01-01

    This paper was published in OPTICS EXPRESS and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://dx.doi.org/10.1364/OE.19.012402. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law A complex-valued multi-tap tunable microwave photonic filter based on single silicon-on-insulator microring resonato...

  1. Effect of Doping Position on the Active Silicon-on-Insulator Micro-Ring Resonator Based on Free Carrier Injection

    Directory of Open Access Journals (Sweden)

    B. Mardiana

    2012-01-01

    Full Text Available Problem statement: Metal interconnects have become significant limitation on the scaling of CMOS technologies in electronics integrated circuit. Silicon photonics has offers great potential to overcome this critical bottleneck due to the advantages of optical interconnects. Silicon-based optical micro-ring resonator is promising basic element of future electronic-photonic integrated circuits because of its wide applications on photonic devices such as modulator, switch and sensor. Approach: This study highlights the study of the free carrier injection effect on the active SOI micro-ring resonator. The effect of the free carrier injection on micro-ring resonator is evaluated by varying the p+ and n+ doping position. Device performances are predicted using numerical modeling software 2D SILVACO as well as Finite Difference Time Domain (FDTD simulation software, RSOFT. Results: The results show that the refractive index change increases as the p+ and n+ doping position become closer to the rib waveguide. A shift in resonant wavelength of around 2 and 3 nm was is predicted at 0.9V drive forward voltage for 0.5 and 1.0 μm gap distance between p+ and n+ doping regions and the sidewall of the rib waveguide. It is also shown that 10 and 9.2 dB maximum change of the output response obtained through the output of the transmission spectrum of the device with gap 0.5 and 1.0 μm. Conclusion: The closer distance between p+ and n+ doping regions and the rib waveguide has optimal shift of resonance wavelength and better extinction ratio of transmission spectrum.

  2. Energy correlations of photon pairs generated by a silicon microring resonator probed by Stimulated Four Wave Mixing

    Science.gov (United States)

    Grassani, Davide; Simbula, Angelica; Pirotta, Stefano; Galli, Matteo; Menotti, Matteo; Harris, Nicholas C.; Baehr-Jones, Tom; Hochberg, Michael; Galland, Christophe; Liscidini, Marco; Bajoni, Daniele

    2016-01-01

    Compact silicon integrated devices, such as micro-ring resonators, have recently been demonstrated as efficient sources of quantum correlated photon pairs. The mass production of integrated devices demands the implementation of fast and reliable techniques to monitor the device performances. In the case of time-energy correlations, this is particularly challenging, as it requires high spectral resolution that is not currently achievable in coincidence measurements. Here we reconstruct the joint spectral density of photons pairs generated by spontaneous four-wave mixing in a silicon ring resonator by studying the corresponding stimulated process, namely stimulated four wave mixing. We show that this approach, featuring high spectral resolution and short measurement times, allows one to discriminate between nearly-uncorrelated and highly-correlated photon pairs. PMID:27032688

  3. Energy correlations of photon pairs generated by a silicon microring resonator probed by Stimulated Four Wave Mixing

    Science.gov (United States)

    Grassani, Davide; Simbula, Angelica; Pirotta, Stefano; Galli, Matteo; Menotti, Matteo; Harris, Nicholas C.; Baehr-Jones, Tom; Hochberg, Michael; Galland, Christophe; Liscidini, Marco; Bajoni, Daniele

    2016-04-01

    Compact silicon integrated devices, such as micro-ring resonators, have recently been demonstrated as efficient sources of quantum correlated photon pairs. The mass production of integrated devices demands the implementation of fast and reliable techniques to monitor the device performances. In the case of time-energy correlations, this is particularly challenging, as it requires high spectral resolution that is not currently achievable in coincidence measurements. Here we reconstruct the joint spectral density of photons pairs generated by spontaneous four-wave mixing in a silicon ring resonator by studying the corresponding stimulated process, namely stimulated four wave mixing. We show that this approach, featuring high spectral resolution and short measurement times, allows one to discriminate between nearly-uncorrelated and highly-correlated photon pairs.

  4. Energy correlations of photon pairs generated by a silicon microring resonator probed by Stimulated Four Wave Mixing

    CERN Document Server

    Grassani, Davide; Pirotta, Stefano; Galli, Matteo; Menotti, Matteo; Harris, Nicholas C; Baehr-Jones, Tom; Hochberg, Michael; Galland, Christophe; Liscidini, Marco; Bajoni, Daniele

    2016-01-01

    Compact silicon integrated devices, such as micro-ring resonators, have recently been demonstrated as efficient sources of quantum correlated photon pairs. The mass production of integrated devices demands the implementation of fast and reliable techniques to monitor the device performances. In the case of time-energy correlations, this is particularly challenging, as it requires high spectral resolution that is not currently achievable in coincidence measurements. Here we reconstruct the joint spectral density of photons pairs generated by spontaneous four-wave mixing in a silicon ring resonator by studying the corresponding stimulated process, namely stimulated four wave mixing. We show that this approach, featuring high spectral resolution and short measurement times, allows one to discriminate between nearly-uncorrelated and highly-correlated photon pairs.

  5. Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

    CERN Document Server

    Savanier, Marc

    2016-01-01

    Generation of photon pairs from compact, manufacturable and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity (JSI), which describes the frequency correlations of the photon pair. In particular, heralded single-photon generation requires uncorrelated photons, rather than the highly anti-correlated photons conventionally obtained under continuous-wave (CW) pumping. Recent attempts to achieve such a factorizable JSI have used short optical pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared to the Si microchip pair generator, dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from a Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a CW optical diode ...

  6. Quantum Dot Laser for a Light Source of an Athermal Silicon Optical Interposer

    Directory of Open Access Journals (Sweden)

    Nobuaki Hatori

    2015-04-01

    Full Text Available This paper reports a hybrid integrated light source fabricated on a silicon platform using a 1.3 μm wavelength quantum dot array laser. Temperature insensitive characteristics up to 120 °C were achieved by the optimum quantum dot structure and laser structure. Light output power was obtained that was high enough to achieve an optical error-free link of a silicon optical interposer. Furthermore, we investigated a novel spot size convertor in a silicon waveguide suitable for a quantum dot laser for lower energy cost operation of the optical interposer.

  7. Flat-topped and low loss silicon-nanowire-type optical MUX/DeMUX employing multi-stage microring resonator assisted delayed Mach-Zehnder interferometers.

    Science.gov (United States)

    Jeong, Seok-Hwan; Tanaka, Shinsuke; Akiyama, Tomoyuki; Sekiguchi, Shigeaki; Tanaka, Yu; Morito, Ken

    2012-11-01

    We propose a novel silicon-nanowire-type multiplexer (MUX) / demultiplexer (DeMUX) based on multi-stage microring resonator assisted delayed Mach-Zehnder interferometers. It is theoretically shown that spectral flatness of DeMUX spectra can be accomplished by incorporating nonlinear phase behaviors of microring resonators into the multi-stage delayed Mach-Zehnder interferometers. We experimentally demonstrate flat-topped 400GHz-spacing 1 × 4Ch demultiplexing operation in the fabricated device with silicon-nanowire waveguides. Furthermore, by integrating the micro-heaters on the top cladding layer of the fabricated device, the DeMUX performance is upgraded in terms of excess loss (flatness at each channel grid. PMID:23187415

  8. Optically tunable full 360° microwave photonic phase shifter using three cascaded silicon-on-insulator microring resonators

    Science.gov (United States)

    Ehteshami, Nasrin; Zhang, Weifeng; Yao, Jianping

    2016-08-01

    A broadband optically tunable microwave phase shifter with a tunable phase shift covering the entire 360° range using three cascaded silicon-on-insulator (SOI) microring resonators (MRRs) that are optically pumped is proposed and experimentally demonstrated. The phase tuning is implemented based on the thermal nonlinear effect in the MRRs. By optically pumping the MRRs, the stored light in the MRRs is absorbed due to two photon absorption (TPA) to generate free carriers, which result in free carrier absorption (FCA). The FCA effect would lead to the heating of the MRRs and cause a redshift in the phase response, which is used to implement a microwave phase shifter with a tunable phase shift. The device is designated and fabricated on an SOI platform, which is experimentally evaluated. The experimental results show that by optically pumping the MRRs, a broadband microwave photonic phase shifter with a bandwidth of 7 GHz from 16 to 23 GHz with a tunable phase shift covering the entire 360° phase shift range is achieved.

  9. A Microring Resonator Sensor for Sensitive Detection of 1,3,5-Trinitrotoluene (TNT

    Directory of Open Access Journals (Sweden)

    Nina Welschoff

    2010-07-01

    Full Text Available A microring resonator sensor device for sensitive detection of the explosive 1,3,5-trinitrotoluene (TNT is presented. It is based on the combination of a silicon microring resonator and tailored receptor molecules.

  10. Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Zhu, Xiaolong; Xiao, Sanshui;

    2015-01-01

    -optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we...

  11. A silicon photonics circuit based on micro-ring resonators in the instantaneous frequency measurement system

    Science.gov (United States)

    Wang, Wanjun; Zhou, Jie; Wang, Jun; Feng, Junbo; Guo, Jin

    2015-10-01

    In this paper, a compact silicon photonics circuit is proposed. It consists of add-drop filter, input/output grating coupler. The resonance peak of add-drop filter can be tuned with the assist of p-i-n diode. The unknown frequency of microwave is loaded at the optical wave and coupled into the chip. The optical power ratio of through port and drop port is monotonous, which is corresponding to the unknown frequency. Meanwhile, the resonance peak of the ring can shift with the assist of p-i-n diode.

  12. Miniature Microring Resonator Sensor Based on a Hybrid Plasmonic Waveguide

    Directory of Open Access Journals (Sweden)

    Xinwan Li

    2011-07-01

    Full Text Available We propose a compact 1-mm-radius microring resonator sensor based on a hybrid plasmonic waveguide on a silicon-on-insulator substrate. The hybrid waveguide is composed of a metal-gap-silicon structure, where the optical energy is greatly enhanced in the narrow gap. We use the finite element method to numerically analyze the device optical characteristics as a biochemical sensor. As the optical field in the hybrid micoring resonator has a large overlap with the upper-cladding sensing medium, the sensitivity is very high compared to other dielectric microring resonator sensors. The compactness of the hybrid microring resonator is resulted from the balance between bending radiation loss and metal absorption loss. The proposed hybrid microring resonator sensors have the main advantages of small footprint and high sensitivity and can be potentially integrated in an array form on a chip for highly-efficient lab-on-chip biochemical sensing applications.

  13. Athermalized channeled spectropolarimeter enhancement.

    Energy Technology Data Exchange (ETDEWEB)

    Jones, Julia Craven; Way, Brandyn Michael; Mercier, Jeffrey Alan; Hunt, Jeffery P.

    2013-09-01

    Channeled spectropolarimetry can measure the complete polarization state of light as a function of wavelength. Typically, a channeled spectropolarimeter uses high order retarders made of uniaxial crystal to amplitude modulate the measured spectrum with the spectrally-dependent Stokes polarization information. A primary limitation of conventional channeled spectropolarimeters is related to the thermal variability of the retarders. Thermal variation often forces frequent system recalibration, particularly for field deployed systems. However, implementing thermally stable retarders, made of biaxial crystal, results in an athermal channeled spectropolarimeter that relieves the need for frequent recalibration. This report presents experimental results for an anthermalized channeled spectropolarimeter prototype produced using potassium titanyl phosphate. The results of this prototype are compared to the current thermal stabilization state of the art. Finally, the application of the technique to the thermal infrared is studied, and the athermalization concept is applied to an infrared imaging spectropolarimeter design.

  14. 基于硅微环谐振腔中四波混频的波长转换改进模型%Modified model for four-wave mixing-based wavelength conversion in silicon micro-ring resonators

    Institute of Scientific and Technical Information of China (English)

    李志强; 高士明

    2011-01-01

    我们在原有硅基微环谐振器四波混频模型的基础上提出了改进模型,考虑了相位调制效应引起的非线性相移。模拟结果表明非线性相移将引起泵浦光和信号光谐振波长的红移,且移动量不同,这将引起信号光谐振峰和波长转换峰值波长的差异。转换效率和转换峰宽度都会受到微环半径、耦合系数等参数的影响,在 Q 值较小的微环谐振腔中可以获得的转换峰较宽。%In this paper, A modified model for wavelength conversion based on four-wave mixing (FWM) in a silicon micro-ring resonator is presented. The nonlinear phase shifts caused by self-phase modulation and cross-phase modulation are also taken into account in the present theoretical analysis besides the linear propagation loss, the nonlinear losses caused by two-photon absorption and free-carrier absorption. Analysis shows that the nonlinear phase shifts will cause different red shifts for the pump and signal (or converted) resonant wavelengths, and consequently an additional wavelength difference between the signal transmission dip and the efficiency peak, which will increase/decrease the conversion efficiency of the signal channel far from/near the pump. The conversion efficiency and the conversion peak width of each signal channel are both affected by the micro-ring radius and coupling coefficient. A broader conversion peak width can be obtained by using a micro-ring resonator with a smaller Q factor.

  15. Modulation Speed Enhancement of Directly Modulated Lasers Using a Micro-ring Resonator

    DEFF Research Database (Denmark)

    An, Yi; Lorences Riesgo, Abel; Seoane, Jorge;

    2012-01-01

    A silicon micro-ring resonator is used to enhance the modulation speed of a 10-Gbit/s directly modulated laser to 40 Gbit/s, demonstrating a potentially integratable transmitter design for high-speed optical interconnects.......A silicon micro-ring resonator is used to enhance the modulation speed of a 10-Gbit/s directly modulated laser to 40 Gbit/s, demonstrating a potentially integratable transmitter design for high-speed optical interconnects....

  16. Athermal photofluidization of glasses.

    Science.gov (United States)

    Fang, G J; Maclennan, J E; Yi, Y; Glaser, M A; Farrow, M; Korblova, E; Walba, D M; Furtak, T E; Clark, N A

    2013-01-01

    Azobenzene and its derivatives are among the most important organic photonic materials, with their photo-induced trans-cis isomerization leading to applications ranging from holographic data storage and photoalignment to photoactuation and nanorobotics. A key element and enduring mystery in the photophysics of azobenzenes, central to all such applications, is athermal photofluidization: illumination that produces only a sub-Kelvin increase in average temperature can reduce, by many orders of magnitude, the viscosity of an organic glassy host at temperatures more than 100 K below its thermal glass transition. Here we analyse the relaxation dynamics of a dense monolayer glass of azobenzene-based molecules to obtain a measurement of the transient local effective temperature at which a photo-isomerizing molecule attacks its orientationally confining barriers. This high temperature (T(loc)~800 K) leads directly to photofluidization, as each absorbed photon generates an event in which a local glass transition temperature is exceeded, enabling collective confining barriers to be attacked with near 100% quantum efficiency. PMID:23443549

  17. High-q microring resonator with narrow free spectral range for pulse repetition rate multiplication

    DEFF Research Database (Denmark)

    Pu, Minhao; Ji, Hua; Frandsen, Lars Hagedorn;

    2009-01-01

    We demonstrate a silicon-on-insulator microring resonator with a free-spectral-range of 0.32 nm, an extinction ratio of 27 dB, and a quality factor of ~140900 at 1550 nm that is used for pulse repetition-rate multiplication from 10 to 40 GHz.......We demonstrate a silicon-on-insulator microring resonator with a free-spectral-range of 0.32 nm, an extinction ratio of 27 dB, and a quality factor of ~140900 at 1550 nm that is used for pulse repetition-rate multiplication from 10 to 40 GHz....

  18. Reconfigurable microwave photonic filter based on parallel-cascaded microrings assisted with a Mach–Zehnder interferometer

    International Nuclear Information System (INIS)

    A reconfigurable microwave photonic filter based on parallel-cascaded silicon microrings is proposed and demonstrated with numerical simulation. A Mach–Zehnder interferometer (MZI) is introduced between two adjacent microrings. Through tuning the MZI, the feedback ratios of adjacent rings can be tuned so that both the bandwidth and shape of filter response can be adjusted while the central wavelength remains constant and the sidelobes can also be remarkably suppressed. (paper)

  19. Hollow nanotubular toroidal polymer microrings

    Science.gov (United States)

    Lee, Jiyeong; Baek, Kangkyun; Kim, Myungjin; Yun, Gyeongwon; Ko, Young Ho; Lee, Nam-Suk; Hwang, Ilha; Kim, Jeehong; Natarajan, Ramalingam; Park, Chan Gyung; Sung, Wokyung; Kim, Kimoon

    2014-02-01

    Despite the remarkable progress made in the self-assembly of nano- and microscale architectures with well-defined sizes and shapes, a self-organization-based synthesis of hollow toroids has, so far, proved to be elusive. Here, we report the synthesis of polymer microrings made from rectangular, flat and rigid-core monomers with anisotropically predisposed alkene groups, which are crosslinked with each other by dithiol linkers using thiol-ene photopolymerization. The resulting hollow toroidal structures are shape-persistent and mechanically robust in solution. In addition, their size can be tuned by controlling the initial monomer concentrations, an observation that is supported by a theoretical analysis. These hollow microrings can encapsulate guest molecules in the intratoroidal nanospace, and their peripheries can act as templates for circular arrays of metal nanoparticles.

  20. Protein detection on biotin-derivatized polyallylamine by optical microring resonators

    NARCIS (Netherlands)

    Ullien, D.; Harmsma, P.J.; Chakkalakkal Abdulla, S.M.C.; Boer, B.M. de; Bosma, D.; Sudhölter, E.J.R.; Smet, L.C.P.M. de; Jager, W.F.

    2014-01-01

    Silicon optical microring resonators (MRRs) are sensitive devices that can be used for biosensing. We present a novel biosensing platform based on the application of polyelectrolyte (PE) layers on such MRRs. The top PE layer was covalently labeled with biotin to ensure binding sites for antibodies v

  1. The Wavelength Shifting and Temperature Athermalization of Fiber Bragg Grating

    Institute of Scientific and Technical Information of China (English)

    Yu; e; Kong

    2003-01-01

    The wavelength shifting properties and the temperature athermalization technology of fiber Bragg grating (FBG) were studied in this paper, and then two different athermalization methods were introduced. The research shows that FBG with athermalization by applying the substrate with negative coefficient of thermal expansion is effective and can be used in many fields.

  2. Microring embedded hollow polymer fiber laser

    International Nuclear Information System (INIS)

    Strongly modulated laser emission has been observed from rhodamine B doped microring resonator embedded in a hollow polymer optical fiber by transverse optical pumping. The microring resonator is fabricated on the inner wall of a hollow polymer fiber. Highly sharp lasing lines, strong mode selection, and a collimated laser beam are observed from the fiber. Nearly single mode lasing with a side mode suppression ratio of up to 11.8 dB is obtained from the strongly modulated lasing spectrum. The microring embedded hollow polymer fiber laser has shown efficient lasing characteristics even at a propagation length of 1.5 m

  3. 硅基槽式微环谐振腔型偏振解复用器全矢量分析∗%Full-vectorial analysis of a p olarization demultiplexer using a microring resonator with silicon-based slot waveguides

    Institute of Scientific and Technical Information of China (English)

    肖金标; 罗辉; 徐银; 孙小菡

    2015-01-01

    Photonic integrated circuits (PICs) based on silicon-on-insulator (SOI) platform with the advantages of high-index-contrast and CMOS-compatible process can efficiently reduce the component sizes and densely integrate them at a chip scale. To meet the ever-increasing demand for the optical interconnect capacity, various multiplexing techniques have been used. However, it should still be proposed to effectively reduce the component size accompanied with the reasonable performance and wavelength division multiplexing (WDM) compatibility. To the best of our knowledge, there has no attempt so far to design a polarization demultiplexer based on a microring resonator in slot waveguide structures. In this paper, a compact silicon-based polarization demultiplexer is proposed, where two regular silicon-based waveguides are used as the input/output channels and a microring in slot waveguide structures is used as the polarization/wavelength-selective component. A full-vectorial finite-difference frequency-domain method is utilized to study the modal characteristics of the regular and slot silicon-based waveguides, where the effective indices and coupling for transverse magnetic (TM) and transverse electric (TE) modes are presented. With the unique modal characteristics of slot waveguides and the strong polarization-dependent features of microring resonator, we can show that the field distributions and the effective indices of the TM mode between the regular and slot waveguides are similar, while those of the TE mode show clearly different. As a result, the input TM mode outputs from the drop port at the resonant wavelength, while the input TE mode outputs from the through port directly with nearly neglected coupling, thus the two polarizations are separated efficiently. A three-dimensional finite-difference time-domain method is utilized to study the spectrum and transmission characteristics of the proposed device. From the results, a polarization demultiplexer with a radius

  4. Full-vectorial analysis of a p olarization demultiplexer using a microring resonator with silicon-based slot waveguides%硅基槽式微环谐振腔型偏振解复用器全矢量分析∗

    Institute of Scientific and Technical Information of China (English)

    肖金标; 罗辉; 徐银; 孙小菡

    2015-01-01

    Photonic integrated circuits (PICs) based on silicon-on-insulator (SOI) platform with the advantages of high-index-contrast and CMOS-compatible process can efficiently reduce the component sizes and densely integrate them at a chip scale. To meet the ever-increasing demand for the optical interconnect capacity, various multiplexing techniques have been used. However, it should still be proposed to effectively reduce the component size accompanied with the reasonable performance and wavelength division multiplexing (WDM) compatibility. To the best of our knowledge, there has no attempt so far to design a polarization demultiplexer based on a microring resonator in slot waveguide structures. In this paper, a compact silicon-based polarization demultiplexer is proposed, where two regular silicon-based waveguides are used as the input/output channels and a microring in slot waveguide structures is used as the polarization/wavelength-selective component. A full-vectorial finite-difference frequency-domain method is utilized to study the modal characteristics of the regular and slot silicon-based waveguides, where the effective indices and coupling for transverse magnetic (TM) and transverse electric (TE) modes are presented. With the unique modal characteristics of slot waveguides and the strong polarization-dependent features of microring resonator, we can show that the field distributions and the effective indices of the TM mode between the regular and slot waveguides are similar, while those of the TE mode show clearly different. As a result, the input TM mode outputs from the drop port at the resonant wavelength, while the input TE mode outputs from the through port directly with nearly neglected coupling, thus the two polarizations are separated efficiently. A three-dimensional finite-difference time-domain method is utilized to study the spectrum and transmission characteristics of the proposed device. From the results, a polarization demultiplexer with a radius

  5. Flexible optical network components based on densely integrated microring resonators

    NARCIS (Netherlands)

    Geuzebroek, Douwe Harmen

    2005-01-01

    This thesis addresses the design, realization and characterization of reconfigurable optical network components based on multiple microring resonators. Since thermally tunable microring resonators can be used as wavelength selective space switches, very compact devices with high complexity and flexi

  6. SOI optical microring resonator with poly(ethylene glycol) polymer brush for label-free biosensor applications

    Czech Academy of Sciences Publication Activity Database

    De Vos, D.; Girones, J.; Popelka, Štěpán; Schacht, E. H.; Baets, R.; Bienstman, P.

    2009-01-01

    Roč. 24, č. 8 (2009), s. 2528-2533. ISSN 0956-5663 Institutional research plan: CEZ:AV0Z40500505 Keywords : silicon-on-insulator * microring resonator * optical biosensor Subject RIV: CD - Macromolecular Chemistry Impact factor: 5.429, year: 2009

  7. Optical frequency comb generation from aluminum nitride micro-ring resonator

    OpenAIRE

    Jung, Hojoong; Xiong, Chi; Fong, King Y.; Zhang, Xufeng; Hong X. Tang

    2013-01-01

    Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single wavelength continuous-wave pump laser. The Kerr coe...

  8. Direct-Digital-Drive Microring Modulator

    CERN Document Server

    Ehrlichman, Yossef; Ruschin, Shlomo

    2016-01-01

    The method of Direct Digital Drive is applied to a microring resonator. The microring resonator is thus controlled by a segmented set of electrodes each of which is driven by binary (digital) signal. Digital linearization is performed with the aid of digital memory lookup table. The method is applied to a single microring modulator to provide an M-bit digital-toanalog converter (DAC), which may also be viewed as an M-level pulse amplitude modulator (M-PAM). It is shown, by means of simulation, that a 4-bit DAC can achieve an effective number of bits (ENOB) of 3.74bits. Applying the same method for two rings, enables the generation of two-dimensional optical M-QAM signals. It is shown, by means of simulation, that a 16-QAM modulator achieves an EVM better than -30dB.

  9. Inline microring reflector for photonic applications

    Science.gov (United States)

    Kang, Young Mo

    The microring is a compact resonator that is used as a versatile building block in photonic circuits ranging from filters, modulators, logic gates, sensors, switches, multiplexers, and laser cavities. The Bragg grating is a periodic structure that allows the selection of a narrow bandwidth of spectrum for stable lasing operation. In this dissertation, we study analysis and simulations of a compact microring based reflector assembled by forming a Bragg grating into a loop. With the appropriate design, the microring resonance can precisely align with the reflection peak of the grating while all other peaks are suppressed by reflection nulls of the grating. The field buildup at the resonance effectively amplifies small reflection of the grating, thereby producing significant overall reflection from the ring, and it is possible to achieve a stable narrow linewidth compact laser by forming a single mode laser cavity. The device operation principle is studied from two distinct perspectives; the first looks at coupling of two contra-directional traveling waves within the ring whereas the second aspect investigates relative excitation of the two competing microring resonant modes. In the former method, we relate the steady state amplitudes of the two traveling waves to the reflection spectrum of the grating and solve for the reflection and transmission response for each wavelength of interest. In the latter approach, we expand the field in terms of the resonant modes of the ring cavity and derive transfer functions for reflection and transmission from the nearby mode frequencies. The angular periodicity of the reflective microring geometry allows us to effectively simulate the resonant modes from a computational domain of a single period grating when the continuity boundary condition is applied. We successfully predict the reflection and transmission response of a Si3N 4/SiO2 microring reflector using this method---otherwise too large to carry out full-wave simulation

  10. Refractive index-based detection of gradient elution liquid chromatography using chip-integrated microring resonator arrays.

    Science.gov (United States)

    Wade, James H; Bailey, Ryan C

    2014-01-01

    Refractive index-based sensors offer attractive characteristics as nondestructive and universal detectors for liquid chromatographic separations, but a small dynamic range and sensitivity to minor thermal perturbations limit the utility of commercial RI detectors for many potential applications, especially those requiring the use of gradient elutions. As such, RI detectors find use almost exclusively in sample abundant, isocratic separations when interfaced with high-performance liquid chromatography. Silicon photonic microring resonators are refractive index-sensitive optical devices that feature good sensitivity and tremendous dynamic range. The large dynamic range of microring resonators allows the sensors to function across a wide spectrum of refractive indices, such as that encountered when moving from an aqueous to organic mobile phase during a gradient elution, a key analytical advantage not supported in commercial RI detectors. Microrings are easily configured into sensor arrays, and chip-integrated control microrings enable real-time corrections of thermal drift. Thermal controls allow for analyses at any temperature and, in the absence of rigorous temperature control, obviates extended detector equilibration wait times. Herein, proof of concept isocratic and gradient elution separations were performed using well-characterized model analytes (e.g., caffeine, ibuprofen) in both neat buffer and more complex sample matrices. These experiments demonstrate the ability of microring arrays to perform isocratic and gradient elutions under ambient conditions, avoiding two major limitations of commercial RI-based detectors and maintaining comparable bulk RI sensitivity. Further benefit may be realized in the future through selective surface functionalization to impart degrees of postcolumn (bio)molecular specificity at the detection phase of a separation. The chip-based and microscale nature of microring resonators also make it an attractive potential detection

  11. Echoes of the glass transition in athermal soft spheres

    Science.gov (United States)

    Morse, Peter; Corwin, Eric

    The glass transition and the athermal jamming transition are both transitions from one disordered state to another marked by a sudden increase in rigidity. Before the onset of rigidity, thermal hard spheres and athermal soft spheres both share the same configuration space. Is there a signature of the glass transition in the topology of the allowed configuration space, and is this same signature present for athermal spheres? I will answer these questions by introducing the concept of local rigidity, and in doing so, I will demonstrate the existence of a pre-jamming phase transition precisely at the glass transition density.

  12. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.;

    2013-01-01

    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active d...... identical double-metal microcylinders. The good agreement that we demonstrate between experimental results and design parameters is crucial towards the achievement of active phase-matched THz emitters....

  13. Investigation of cascaded SiN microring resonators at 1.3 µm and 1.5 µm.

    Science.gov (United States)

    Zamora, Vanessa; Lützow, Peter; Weiland, Martin; Pergande, Daniel

    2013-11-18

    An optical device operating at wavelengths around 1.3 µm and 1.5 µm is demonstrated experimentally. It is based on cascaded microring resonators (CMRRs) and the Vernier effect (VE). The architecture consists of two microring resonators (MRRs) connected via a common waveguide; two waveguides were added for the interrogation of CMRRs. The free spectral ranges of both MRRs are slightly different in order to activate the VE, which is known to enhance the sensitivity in optical sensors. CMRRs were fabricated on a silicon nitride (SiN) platform. Two types of buffer layers-benzocyclobutene (BCB) polymer and thermal silicon oxide (SiOx)-were tested. A study of CMRRs was carried out with three structures of different structural parameters. The experimental results show good agreement with the theoretical analysis. This approach is promising for the fabrication of highly sensitive optical sensors in wide operating wavelength range. PMID:24514273

  14. Flexible optical network components based on densely integrated microring resonators

    OpenAIRE

    Geuzebroek, Douwe Harmen

    2005-01-01

    This thesis addresses the design, realization and characterization of reconfigurable optical network components based on multiple microring resonators. Since thermally tunable microring resonators can be used as wavelength selective space switches, very compact devices with high complexity and flexibility can be created.

  15. Optical frequency comb generation from aluminum nitride micro-ring resonator

    CERN Document Server

    Jung, Hojoong; Fong, King Y; Zhang, Xufeng; Tang, Hong X

    2013-01-01

    Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single wavelength continuous-wave pump laser. The Kerr coefficient (n2) of aluminum nitride is further extracted from our experimental results.

  16. High-order all-optical differential equation solver based on microring resonators.

    Science.gov (United States)

    Tan, Sisi; Xiang, Lei; Zou, Jinghui; Zhang, Qiang; Wu, Zhao; Yu, Yu; Dong, Jianji; Zhang, Xinliang

    2013-10-01

    We propose and experimentally demonstrate a feasible integrated scheme to solve all-optical differential equations using microring resonators (MRRs) that is capable of solving first- and second-order linear ordinary differential equations with different constant coefficients. Employing two cascaded MRRs with different radii, an excellent agreement between the numerical simulation and the experimental results is obtained. Due to the inherent merits of silicon-based devices for all-optical computing, such as low power consumption, small size, and high speed, this finding may motivate the development of integrated optical signal processors and further extend optical computing technologies. PMID:24081039

  17. Elastic regimes of subisostatic athermal fiber networks

    Science.gov (United States)

    Licup, A. J.; Sharma, A.; MacKintosh, F. C.

    2016-01-01

    Athermal models of disordered fibrous networks are highly useful for studying the mechanics of elastic networks composed of stiff biopolymers. The underlying network architecture is a key aspect that can affect the elastic properties of these systems, which include rich linear and nonlinear elasticity. Existing computational approaches have focused on both lattice-based and off-lattice networks obtained from the random placement of rods. It is not obvious, a priori, whether the two architectures have fundamentally similar or different mechanics. If they are different, it is not clear which of these represents a better model for biological networks. Here, we show that both approaches are essentially equivalent for the same network connectivity, provided the networks are subisostatic with respect to central force interactions. Moreover, for a given subisostatic connectivity, we even find that lattice-based networks in both two and three dimensions exhibit nearly identical nonlinear elastic response. We provide a description of the linear mechanics for both architectures in terms of a scaling function. We also show that the nonlinear regime is dominated by fiber bending and that stiffening originates from the stabilization of subisostatic networks by stress. We propose a generalized relation for this regime in terms of the self-generated normal stresses that develop under deformation. Different network architectures have different susceptibilities to the normal stress but essentially exhibit the same nonlinear mechanics. Such a stiffening mechanism has been shown to successfully capture the nonlinear mechanics of collagen networks.

  18. Elastic regimes of subisostatic athermal fiber networks.

    Science.gov (United States)

    Licup, A J; Sharma, A; MacKintosh, F C

    2016-01-01

    Athermal models of disordered fibrous networks are highly useful for studying the mechanics of elastic networks composed of stiff biopolymers. The underlying network architecture is a key aspect that can affect the elastic properties of these systems, which include rich linear and nonlinear elasticity. Existing computational approaches have focused on both lattice-based and off-lattice networks obtained from the random placement of rods. It is not obvious, a priori, whether the two architectures have fundamentally similar or different mechanics. If they are different, it is not clear which of these represents a better model for biological networks. Here, we show that both approaches are essentially equivalent for the same network connectivity, provided the networks are subisostatic with respect to central force interactions. Moreover, for a given subisostatic connectivity, we even find that lattice-based networks in both two and three dimensions exhibit nearly identical nonlinear elastic response. We provide a description of the linear mechanics for both architectures in terms of a scaling function. We also show that the nonlinear regime is dominated by fiber bending and that stiffening originates from the stabilization of subisostatic networks by stress. We propose a generalized relation for this regime in terms of the self-generated normal stresses that develop under deformation. Different network architectures have different susceptibilities to the normal stress but essentially exhibit the same nonlinear mechanics. Such a stiffening mechanism has been shown to successfully capture the nonlinear mechanics of collagen networks. PMID:26871101

  19. Athermalization and thermal characteristics of multilayer diffractive optical elements.

    Science.gov (United States)

    Wang, Ju; Xue, Changxi

    2015-11-20

    A mathematical model to analyze the thermal characteristics of the multilayer diffractive optical elements (MLDOEs) is presented with consideration of the thermal characteristics for the refractive optical elements and single-layer diffractive optical elements. The analysis process of athermalization for MLDOEs by using the opto-thermal expansion coefficient of optical materials is given. Meanwhile, the microstructure heights of surface relief MLDOEs, the optical path difference, and the polychromatic integral diffraction efficiency with the ambient temperature changed are analyzed. The analysis results can be used to guide an athermalization design for the hybrid refractive-diffractive optical systems with MLDOEs. PMID:26836521

  20. Athermal narrow-band optical filter at 1.55μm wavelength by silica-based athermal waveguide

    OpenAIRE

    Kokubun, Yasuo; Yoneda, Shigeru; Matsuura, Shinnosuke

    1998-01-01

    The temperature dependence of central wavelength of optical filters is a serious problem for the dense WDM systems. This dependence is owing to the temperature dependence of optical path-length of the waveguide. In this study, we realized a temperature independent silica-based optical filter at 1.55μm wavelength using an athermal waveguide, in which optical pathlength is independent of temperature. First, we designed a silica-based athermal waveguide, and next we designed and fabricated a rin...

  1. Electro-optic directed XOR logic circuits based on parallel-cascaded micro-ring resonators.

    Science.gov (United States)

    Tian, Yonghui; Zhao, Yongpeng; Chen, Wenjie; Guo, Anqi; Li, Dezhao; Zhao, Guolin; Liu, Zilong; Xiao, Huifu; Liu, Guipeng; Yang, Jianhong

    2015-10-01

    We report an electro-optic photonic integrated circuit which can perform the exclusive (XOR) logic operation based on two silicon parallel-cascaded microring resonators (MRRs) fabricated on the silicon-on-insulator (SOI) platform. PIN diodes embedded around MRRs are employed to achieve the carrier injection modulation. Two electrical pulse sequences regarded as two operands of operations are applied to PIN diodes to modulate two MRRs through the free carrier dispersion effect. The final operation result of two operands is output at the Output port in the form of light. The scattering matrix method is employed to establish numerical model of the device, and numerical simulator SG-framework is used to simulate the electrical characteristics of the PIN diodes. XOR operation with the speed of 100Mbps is demonstrated successfully. PMID:26480148

  2. Simultaneous Polarization Demultiplexing and Demodulation of PolMux-DPSK Signals in a Silicon Chip

    DEFF Research Database (Denmark)

    Huang, Bo; Ding, Yunhong; Ou, Haiyan;

    2013-01-01

    Simultaneous polarization demultiplexing and demodulation of PolMux-DPSK signals is demonstrated using a polarization splitter and rotator together with a single microring resonator on a silicon chip. System experimental results validate the concept.......Simultaneous polarization demultiplexing and demodulation of PolMux-DPSK signals is demonstrated using a polarization splitter and rotator together with a single microring resonator on a silicon chip. System experimental results validate the concept....

  3. [Study on Strain Detection with Si Based on Bicyclic Cascade Optical Microring Resonator].

    Science.gov (United States)

    Tang, Jun; Lei, Long-hai; Zhang, Wei; Zhang, Tian-en; Xue, Chen-yang; Zhang, Wen-dong; Liu, Jun

    2016-03-01

    Optical micro-ring resonator prepared on Silicon-On-Insulator (SOI) has high sensitivity, small size and low mode volume. Its high sensitivity has been widely applied to the optical information transmission and inertial navigation devices field, while it is rarely applied in the testing of Mechanics. This paper presents a cantilever stress/strain gauge with an optical microring resonator. It is proposed the using of radius change of ring waveguide for the sensing element. When external stress is put on the structure, the radius of the SOI ring waveguide will be subjected to variation, which causes the optical resonant parameters to change. This ultimately leads to a red-shift of resonant spectrum, and shows the excellent characteristics of the structure's stress/strain sensitivity. Designed a bicyclic cascade embedded optical micro-cavity structure, which was prepared by employing MEMS lithography and ICP etching process. The characteristic of stress/strain sensitivity was calculated theoretically. Two values of 0.185 pm x kPa(-1) and 18.04 pm x microstrain(-1) were obtained experimentally, which also was verified by theoretical simulations. Comparing with the single-loop micro-cavity structure, its measuring range and stress sensitivity increased by nearly 50.3%, 10.6%, respectively. This paper provides a new method to develop micro-opto-electromechanical system (MOEMS) sensors. PMID:27400541

  4. Graphically Selecting Optical Material for Color Correction and Passive Athermalization

    Directory of Open Access Journals (Sweden)

    Raghad Ismail Ibrahim

    2016-04-01

    Full Text Available This paper presents pair optical glass by using a graphical method for selecting achromatize and athermalize an imaging lens. An athermal glass map that plots thermal glass constant versus inverse Abbe number is derived through analysis of optical glasses in visible light. By introducing the equivalent Abbe number and equivalent thermal glass constant, although it is a multi-lens system, we have a simple way to visually identify possible optical materials. ZEMAX will be used to determine the change in focus through the expected temperature changes in Earth orbit. The thermal defocuses over -20°C to +60°C are reduced to be much less than the depth of focus of the system

  5. Material properties of silicon and silicon carbide foams

    Science.gov (United States)

    Jacoby, Marc T.; Goodman, William A.

    2005-08-01

    Silicon and silicon carbide foams provide the lightweighting element for Schafer Corporation's silicon and silicon carbide lightweight mirror systems (SLMSTM and SiC-SLMSTM). SLMSTM and SiC-SLMSTM provide the enabling technology for manufacturing lightweight, athermal optical sub-assemblies and instruments. Silicon and silicon carbide foam samples were manufactured and tested under a Schafer-funded Internal Research and Development program in various configurations to obtain mechanical and thermal property data. The results of the mechanical tests that are reported in this paper include Young's modulus, compression strength, tensile strength, Poisson's ratio and vibrational damping. The results of the thermal tests include thermal conductivity and coefficient of thermal expansion.

  6. A-thermal elastic behavior of silicate glasses.

    Science.gov (United States)

    Rabia, Mohammed Kamel; Degioanni, Simon; Martinet, Christine; Le Brusq, Jacques; Champagnon, Bernard; Vouagner, Dominique

    2016-02-24

    Depending on the composition of silicate glasses, their elastic moduli can increase or decrease as function of the temperature. Studying the Brillouin frequency shift of these glasses versus temperature allows the a-thermal composition corresponding to an intermediate glass to be determined. In an intermediate glass, the elastic moduli are independent of the temperature over a large temperature range. For sodium alumino-silicate glasses, the a-thermal composition is close to the albite glass (NaAlSi3O8). The structural origin of this property is studied by in situ high temperature Raman scattering. The structure of the intermediate albite glass and of silica are compared at different temperatures between room temperature and 600 °C. When the temperature increases, it is shown that the high frequency shift of the main band at 440 cm(-1) in silica is a consequence of the cristobalite-like alpha-beta transformation of 6-membered rings. This effect is stronger in silica than bond elongation (anharmonic effects). As a consequence, the elastic moduli of silica increase as the temperature increases. In the albite glass, the substitution of 25% of Si(4+) ions by Al(3+) and Na(+) ions decreases the proportion of SiO2 6-membered rings responsible for the silica anomaly. The effects of the silica anomaly balance the anharmonicity in albite glass and give rise to an intermediate a-thermal glass. Different networks, formers or modifiers, can be added to produce different a-thermal glasses with useful mechanical or chemical properties. PMID:26815634

  7. Equation of state of athermal lattice chains: Effects of polydispersity

    Science.gov (United States)

    Hertanto, Agung; Dickman, Ronald

    1990-07-01

    The repulsive-wall simulation method is applied to a polydisperse system of athermal chains on the simple cubic lattice. The pressure is determined over the full range of densities for two chain length distributions with average length =40. Our results indicate that the compressibility factor is insensitive to polydispersity, in accord with the predictions of simple mean-field theories. The density dependence of the mean-square end-to-end distance is also investigated.

  8. Athermally photoreduced graphene oxides for three-dimensional holographic images

    OpenAIRE

    Li, Xiangping; Ren, Haoran; Chen, Xi; LIU, JUAN; Li, Qin; Li, Chengmingyue; Xue, Gaolei; Jia, Jia; Cao, Liangcai; Sahu, Amit; Hu, Bin; Wang, Yongtian; Jin, Guofan; Gu, Min

    2015-01-01

    The emerging graphene-based material, an atomic layer of aromatic carbon atoms with exceptional electronic and optical properties, has offered unprecedented prospects for developing flat two-dimensional displaying systems. Here, we show that reduced graphene oxide enabled write-once holograms for wide-angle and full-colour three-dimensional images. This is achieved through the discovery of subwavelength-scale multilevel optical index modulation of athermally reduced graphene oxides by a singl...

  9. Single-photon all-optical switching using coupled microring resonators

    Indian Academy of Sciences (India)

    Wenge Yang; Amitabh Joshi; Min Xiao

    2007-08-01

    We study the nonlinear phase response of a microring resonator coupled to a bus waveguide and the use of this nonlinear phase shift to store information in the microring resonator and enhance the switching characteristics of a Mach–Zehnder interferometer (MZI). By introducing coupling between adjacent microring resonators, the switching characteristics of the MZI can be exponentially enhanced as a function of the number of microring resonators, when compared to the linear enhancement for uncoupled resonators. With only a few moderate-finesse microring resonators, the switching power can be reduced to attowatt level, allowing for photonic switching devices that operate at single-photon level in ordinary optical waveguides.

  10. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

  11. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) proposes to manufacture new silicon carbide (SiC) foam-based optics that are composite, athermal and lightweight (FOCAL) that provide...

  12. Electrical characterization and device characterization of ZnO microring shaped films by sol-gel method

    International Nuclear Information System (INIS)

    Research highlights: → Zinc oxide microrings formed nanoparticles were prepared by Sol Gel method. → The ZnO film exhibits a polycrystalline grown with a hexagonal wurtzite-type and optical band gap of 3.22 eV. → Au/n-ZnO/n-Si Schottky diode exhibits a rectifying behavior with a higher ideality factor of 2.01 and barrier height of 0.80 eV. - Abstract: Zinc oxide microrings formed nanoparticles were prepared on n-type silicon substrate by sol-gel method. The structure of ZnO film is confirmed by XRD analysis and ZnO film exhibits a polycrystalline grown with a hexagonal wurtzite-type. The optical band gap of the ZnO film deposited on silicon substrate was determined using the reflectance spectra by means of Kubelka-Munk formula and was found to be 3.22 eV. The structural properties of the ZnO film were investigated by atomic force microscopy. The AFM results indicate that the ZnO film is consisted of microrings with nanoparticles. A single phase of ZnO microring with outer diameter is ranging from 2.2 μm to 1.72 μm and inner diameters ranging from 125 nm to 470 nm was obtained. A Schottky diode having Au/n-type ZnO plus n-type silicon structure was fabricated. The current-voltage and impedance spectroscopy properties of the diode have been investigated. The barrier height φb and ideality factor n values for the diode were found to be 0.80 eV and 2.01, respectively. The series resistance for the diode was calculated from the admittance behavior in accumulation region. The interface state density profile for the diode was obtained. The obtained results indicate that the electric parameters of the diode are affected by structural properties of ZnO film.

  13. Time-dependent phenomena in athermal martensitic transformations

    International Nuclear Information System (INIS)

    The unexpected finding of time-dependent behaviour in athermal martensitic transformations (MT) above the MS temperature has prompted many experimental studies of incubation time. We review here various data scattered in the literature, emphasising the seminal experimental and theoretical work by Kakeshita et al. Contradicting experimental results and alternative concepts as put forward by Otsuka et al. and Planes et al. are discussed in some detail as well. Future experiments to clarify the situation are suggested, in particular the application of X-ray photon correlation spectroscopy to extend the range of observable time scales into regimes dominated by the dynamics of potential embryonic fluctuations

  14. Ultrasonic synthesis, formation mechanism and optical properties of single-crystalline Pb(OH)Br microrings

    Energy Technology Data Exchange (ETDEWEB)

    Wang Guizhen, E-mail: wangguizhen0@hotmail.com [Key Laboratory of Ministry of Education for Application Technology of Chemical Materials in Hainan Superior Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Key Laboratory of Chinese Education Ministry for Tropical Biological Resources, Hainan University, Haikou 570228 (China); Wan Gengping [Key Laboratory of Ministry of Education for Application Technology of Chemical Materials in Hainan Superior Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Key Laboratory of Chinese Education Ministry for Tropical Biological Resources, Hainan University, Haikou 570228 (China); Lin Shiwei; Yu Wenhui [Key Laboratory of Ministry of Education for Application Technology of Chemical Materials in Hainan Superior Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Elliptic Pb(OH)Br microrings were synthesized by a simple sonochemical process. Black-Right-Pointing-Pointer Size distribution of the median holes could be controlled. Black-Right-Pointing-Pointer Microrings were formed by ultrasonic etching accompanying the Ostwald ripening. Black-Right-Pointing-Pointer Pb(OH)Br microrings exhibit optical properties of semiconductors. - Abstract: Novel elliptic Pb(OH)Br microrings have been controllably synthesized on a large scale by a simple sonochemical process in aqueous solution. The structure characterizations of such microrings were investigated in detail by means of X-ray powder diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. The results indicate that the uniform orthorhombic phase of Pb(OH)Br microrings with good crystallinity can be obtained and such ring-like Pb(OH)Br is single crystalline with the (0 1 1) plane as the 2D exposed surface. The influence of reaction time and alkali sources on the evolution of structures has been studied. The possible hollowing growth mechanism for the Pb(OH)Br microrings has been discussed. Meanwhile, the ultraviolet-visible absorbance spectra and photoluminescence microrings show their ultraviolet absorption and green emitting behavior, indicating that the elliptic Pb(OH)Br microrings have great potential to be applied in luminescent and optoelectronic devices.

  15. Ultrasonic synthesis, formation mechanism and optical properties of single-crystalline Pb(OH)Br microrings

    International Nuclear Information System (INIS)

    Highlights: ► Elliptic Pb(OH)Br microrings were synthesized by a simple sonochemical process. ► Size distribution of the median holes could be controlled. ► Microrings were formed by ultrasonic etching accompanying the Ostwald ripening. ► Pb(OH)Br microrings exhibit optical properties of semiconductors. - Abstract: Novel elliptic Pb(OH)Br microrings have been controllably synthesized on a large scale by a simple sonochemical process in aqueous solution. The structure characterizations of such microrings were investigated in detail by means of X-ray powder diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. The results indicate that the uniform orthorhombic phase of Pb(OH)Br microrings with good crystallinity can be obtained and such ring-like Pb(OH)Br is single crystalline with the (0 1 1) plane as the 2D exposed surface. The influence of reaction time and alkali sources on the evolution of structures has been studied. The possible hollowing growth mechanism for the Pb(OH)Br microrings has been discussed. Meanwhile, the ultraviolet–visible absorbance spectra and photoluminescence microrings show their ultraviolet absorption and green emitting behavior, indicating that the elliptic Pb(OH)Br microrings have great potential to be applied in luminescent and optoelectronic devices.

  16. A microring resonator based negative permeability metamaterial sensor.

    Science.gov (United States)

    Sun, Jun; Huang, Ming; Yang, Jing-Jing; Li, Ting-Hua; Lan, Yao-Zhong

    2011-01-01

    Metamaterials are artificial multifunctional materials that acquire their material properties from their structure, rather than inheriting them directly from the materials they are composed of, and they may provide novel tools to significantly enhance the sensitivity and resolution of sensors. In this paper, we derive the dispersion relation of a cylindrical dielectric waveguide loaded on a negative permeability metamaterial (NPM) layer, and compute the resonant frequencies and electric field distribution of the corresponding Whispering-Gallery-Modes (WGMs). The theoretical resonant frequency and electric field distribution results are in good agreement with the full wave simulation results. We show that the NPM sensor based on a microring resonator possesses higher sensitivity than the traditional microring sensor since with the evanescent wave amplification and the increase of NPM layer thickness, the sensitivity will be greatly increased. This may open a door for designing sensors with specified sensitivity. PMID:22164062

  17. A Microring Resonator Based Negative Permeability Metamaterial Sensor

    Directory of Open Access Journals (Sweden)

    Yao-Zhong Lan

    2011-08-01

    Full Text Available Metamaterials are artificial multifunctional materials that acquire their material properties from their structure, rather than inheriting them directly from the materials they are composed of, and they may provide novel tools to significantly enhance the sensitivity and resolution of sensors. In this paper, we derive the dispersion relation of a cylindrical dielectric waveguide loaded on a negative permeability metamaterial (NPM layer, and compute the resonant frequencies and electric field distribution of the corresponding Whispering-Gallery-Modes (WGMs. The theoretical resonant frequency and electric field distribution results are in good agreement with the full wave simulation results. We show that the NPM sensor based on a microring resonator possesses higher sensitivity than the traditional microring sensor since with the evanescent wave amplification and the increase of NPM layer thickness, the sensitivity will be greatly increased. This may open a door for designing sensors with specified sensitivity.

  18. Athermalization of resonant optical devices via thermo-mechanical feedback

    Energy Technology Data Exchange (ETDEWEB)

    Rakich, Peter; Nielson, Gregory N.; Lentine, Anthony L.

    2016-01-19

    A passively athermal photonic system including a photonic circuit having a substrate and an optical cavity defined on the substrate, and passive temperature-responsive provisions for inducing strain in the optical cavity of the photonic circuit to compensate for a thermo-optic effect resulting from a temperature change in the optical cavity of the photonic circuit. Also disclosed is a method of passively compensating for a temperature dependent thermo-optic effect resulting on an optical cavity of a photonic circuit including the step of passively inducing strain in the optical cavity as a function of a temperature change of the optical cavity thereby producing an elasto-optic effect in the optical cavity to compensate for the thermo-optic effect resulting on an optical cavity due to the temperature change.

  19. A Microring Temperature Sensor Based on the Surface Plasmon Wave

    Directory of Open Access Journals (Sweden)

    Wenchao Li

    2015-01-01

    Full Text Available A structure of microring sensor suitable for temperature measurement based on the surface plasmon wave is put forward in this paper. The sensor uses surface plasmon multilayer waveguiding structure in the vertical direction and U-shaped microring structure in the horizontal direction and utilizes SOI as the thermal material. The transfer function derivation of the structure of surface plasmon microring sensor is according to the transfer matrix method. While the change of refractive index of Si is caused by the change of ambient temperature, the effective refractive index of the multilayer waveguiding structure is changed, resulting in the drifting of the sensor output spectrum. This paper focuses on the transmission characteristics of multilayer waveguide structure and the impact on the output spectrum caused by refractive index changes in temperature parts. According to the calculation and simulation, the transmission performance of the structure is stable and the sensitivity is good. The resonance wavelength shift can reach 0.007 μm when the temperature is increased by 100 k and FSR can reach about 60 nm. This structure achieves a high sensitivity in the temperature sense taking into account a wide range of filter frequency selections, providing a theoretical basis for the preparation of microoptics.

  20. Athermal Energy Loss from X-Rays Deposited in Thin Superconducting Bilayers on Solid Substrates

    Science.gov (United States)

    Bandler, Simon R.; Kozorezov, Alexander; Balvin, Manuel A.; Busch, Sarah E.; Nagler, Peter N.; Porst, Jan-Patrick; Smith, Stephen J.; Stevenson, Thomas R.; Sadleir, John E.; Seidel, George M.

    2012-01-01

    An important feature that determines the energy resolution of any type of thin film microcalorimeter is the fraction of athermal energy that can be lost to the heat bath prior to the device coming into thermal equilibrium.

  1. Temperature-indepoendent narrow-band optical filter by an athermal waveguide

    OpenAIRE

    Kokubun, Yasuo; Yoneda, Shigeru; Tanaka, Hiroaki

    1997-01-01

    The temperature dependence of the central wavelength of narrow-band filters is a serious problem for the dense WDM systems. In this study, we realized a temperature independent narrow-band filter at 1.3μm wavelength. First, we designed an athermal waveguide in which optical path length is independent of temperature by using a finite element method. Using this athermal waveguide, we designed and fabricated a ring resonator. As a result, we successfully decreased the temperature coefficient of ...

  2. All-optical differential equation solver with constant-coefficient tunable based on a single microring resonator.

    Science.gov (United States)

    Yang, Ting; Dong, Jianji; Lu, Liangjun; Zhou, Linjie; Zheng, Aoling; Zhang, Xinliang; Chen, Jianping

    2014-01-01

    Photonic integrated circuits for photonic computing open up the possibility for the realization of ultrahigh-speed and ultra wide-band signal processing with compact size and low power consumption. Differential equations model and govern fundamental physical phenomena and engineering systems in virtually any field of science and engineering, such as temperature diffusion processes, physical problems of motion subject to acceleration inputs and frictional forces, and the response of different resistor-capacitor circuits, etc. In this study, we experimentally demonstrate a feasible integrated scheme to solve first-order linear ordinary differential equation with constant-coefficient tunable based on a single silicon microring resonator. Besides, we analyze the impact of the chirp and pulse-width of input signals on the computing deviation. This device can be compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may motivate the development of integrated photonic circuits for optical computing. PMID:24993440

  3. Spontaneous four-wave mixing in lossy microring resonators

    CERN Document Server

    Vernon, Z

    2015-01-01

    We develop a general Hamiltonian treatement of spontaneous four-wave mixing in a microring resonator side-coupled to a channel waveguide. The effect of scattering losses in the ring is included, as well as parasitic nonlinear effects including self- and cross-phase modulation. A procedure for computing the output of such a system for arbitrary parameters and pump states is presented. For the limit of weak pumping an expression for the joint spectral intensity of generated photon pairs, as well as the singles-to-coincidences ratio, is derived.

  4. Analytical solutions of coupled-mode equations for microring resonators

    Indian Academy of Sciences (India)

    ZHAO C Y

    2016-06-01

    We present a study on analytical solutions of coupled-mode equations for microring resonators with an emphasis on occurrence of all-optical EIT phenomenon, obtained by using a cofactor. As concrete examples, analytical solutions for a $3 \\times 3$ linearly distributed coupler and a circularly distributed coupler are obtained. The former corresponds to a non-degenerate eigenvalue problem and the latter corresponds to a degenerate eigenvalue problem. For comparison and without loss of generality, analytical solution for a $4 \\times 4$ linearly distributed coupler is also obtained. This paper may be of interest to optical physics and integrated photonics communities.

  5. A microring multimode laser using hollow polymer optical fibre

    Indian Academy of Sciences (India)

    M Kailasnath; V P N Nampoori; P Radhakrishnan

    2010-11-01

    We report the observation of multimode laser operation at wavelengths corresponding to whispering-gallery modes from a freestanding microring cavity based on rhodamine B dye-doped PMMA hollow optical fibre. Cylindrical microcavities with diameters 155, 340 and 615 m were fabricated from a dye-doped hollow polymer optical fibre preform. An average mode spacing of 0.17 nm was observed for the 340 m cavity. This shows that the laser mode intensity distribution is concentrated on the outer edge of the cavity.

  6. Chemical potential and dimensions of chain molecules in athermal environments

    Science.gov (United States)

    Escobedo, Fernando A.

    A recently developed method for the simulation of chemical potentials of chain molecules (EVALENCH) is applied here to obtain the chemical potential, the mean square end-to-end distance (R2n) and the mean square radius of gyration (R2g) of dilute chains in different athermal media. The environments considered in this work are a frozen network structure, a deformable network matrix and a monomeric solvent at various densities. The properties of all chain lengths smaller than a preset maximum are calculated in a single simulation. A novel method is also presented for locating and computing the fraction of sampling space available to append one segment of an existing chain. This method enhances the range of densities where simulations of chemical potential are feasible. Simulated chemical potentials are compared with the predictions of two theories; good agreement is found in both cases. We find that R2n and R2g are reduced as the density of the medium is increased (network or solvent), while they are increased when the network is frozen and as the monomeric solvent size is made larger than that of the chain sites. At the conditions studied here, no direct evidence of chain collapse is observed.

  7. Athermally photoreduced graphene oxides for three-dimensional holographic images

    Science.gov (United States)

    Li, Xiangping; Ren, Haoran; Chen, Xi; Liu, Juan; Li, Qin; Li, Chengmingyue; Xue, Gaolei; Jia, Jia; Cao, Liangcai; Sahu, Amit; Hu, Bin; Wang, Yongtian; Jin, Guofan; Gu, Min

    2015-01-01

    The emerging graphene-based material, an atomic layer of aromatic carbon atoms with exceptional electronic and optical properties, has offered unprecedented prospects for developing flat two-dimensional displaying systems. Here, we show that reduced graphene oxide enabled write-once holograms for wide-angle and full-colour three-dimensional images. This is achieved through the discovery of subwavelength-scale multilevel optical index modulation of athermally reduced graphene oxides by a single femtosecond pulsed beam. This new feature allows for static three-dimensional holographic images with a wide viewing angle up to 52 degrees. In addition, the spectrally flat optical index modulation in reduced graphene oxides enables wavelength-multiplexed holograms for full-colour images. The large and polarization-insensitive phase modulation over π in reduced graphene oxide composites enables to restore vectorial wavefronts of polarization discernible images through the vectorial diffraction of a reconstruction beam. Therefore, our technique can be leveraged to achieve compact and versatile holographic components for controlling light. PMID:25901676

  8. Scaling silicon photonic switch fabrics for data center interconnection networks.

    Science.gov (United States)

    Nikolova, Dessislava; Rumley, Sébastien; Calhoun, David; Li, Qi; Hendry, Robert; Samadi, Payman; Bergman, Keren

    2015-01-26

    With the rapidly increasing aggregate bandwidth requirements of data centers there is a growing interest in the insertion of optically interconnected networks with high-radix transparent optical switch fabrics. Silicon photonics is a particularly promising and applicable technology due to its small footprint, CMOS compatibility, high bandwidth density, and the potential for nanosecond scale dynamic connectivity. In this paper we analyze the feasibility of building silicon photonic microring based switch fabrics for data center scale optical interconnection networks. We evaluate the scalability of a microring based switch fabric for WDM signals. Critical parameters including crosstalk, insertion loss and switching speed are analyzed, and their sensitivity with respect to device parameters is examined. We show that optimization of physical layer parameters can reduce crosstalk and increase switch fabric scalability. Our analysis indicates that with current state-of-the-art devices, a high radix 128 × 128 silicon photonic single chip switch fabric with tolerable power penalty is feasible. The applicability of silicon photonic microrings for data center switching is further supported via review of microring operations and control demonstrations. The challenges and opportunities for this technology platform are discussed. PMID:25835876

  9. Multiplexed detection of lectins using integrated glycan-coated microring resonators.

    Science.gov (United States)

    Ghasemi, Farshid; Hosseini, Ehsan Shah; Song, Xuezheng; Gottfried, David S; Chamanzar, Maysamreza; Raeiszadeh, Mehrsa; Cummings, Richard D; Eftekhar, Ali A; Adibi, Ali

    2016-06-15

    We present the systematic design, fabrication, and characterization of a multiplexed label-free lab-on-a-chip biosensor using silicon nitride (SiN) microring resonators. Sensor design is addressed through a systematic approach that enables optimizing the sensor according to the specific noise characteristics of the setup. We find that an optimal 6 dB undercoupled resonator consumes 40% less power in our platform to achieve the same limit-of-detection as the conventional designs using critically coupled resonators that have the maximum light-matter interaction. We lay out an optimization framework that enables the generalization of our method for any type of optical resonator and noise characteristics. The device is fabricated using a CMOS-compatible process, and an efficient swabbing lift-off technique is introduced for the deposition of the protective oxide layer. This technique increases the lift-off quality and yield compared to common lift-off methods based on agitation. The complete sensor system, including microfluidic flow cell and surface functionalization with glycan receptors, is tested for the multiplexed detection of Aleuria Aurantia Lectin (AAL) and Sambucus Nigra Lectin (SNA). Further analysis shows that the sensor limit of detection is 2 × 10(-6) RIU for bulk refractive index, 1 pg/mm(2) for surface-adsorbed mass, and ∼ 10 pM for the glycan/lectins studied here. PMID:26826877

  10. EFFECT OF LOW TEMPERATURE ON THE FABRICATION OF MICRORING RESONATOR BY WET ETCHING

    Directory of Open Access Journals (Sweden)

    Hazura Haroon

    2012-01-01

    Full Text Available Research related to semiconductor devices often relies on wafer fabrication. The fabrication of Silicon (Si based devices by anisotropic wet etching can be affected by many etching parameters such as etching temperature, crystal orientation and percent of composition. Most of the anisotropic wet etchings by KOH solution done before were conducted at temperature over 70°C. We found that the temperatures are not suitable to fabricate ring waveguide as the waveguide wall will collapse at such high temperature. This study reports the etching characteristics of Si in KOH solution with 35% concentration at the temperature below 70°C. The etched wafer is targeted to be the basic structure for Microring Resonators (MRRs based devices. This technique provides not only lower cost as compared to other etching technique, but also simple preparation. We found that low temperature manage to mold a good ring waveguide with low tendency to form rectangular structure due to crystal orientation. At 40°C, the best waveguide formation was obtained with a smooth waveguide surface, experiencing an etching rate of 0.066 μ min-1 and an appreciable ring waveguide structure. The effect of the low temperature on the fabrication of the MRRs devices has been investigated and studied.

  11. Design and fabrication of InP micro-ring resonant detectors

    Institute of Scientific and Technical Information of China (English)

    辛海明; 黄永清; 陈海波; 黄辉; 任晓敏; 周星光

    2009-01-01

    The quantum efficiency and the transient response of the InP semiconductor micro-ring resonant detector are analyzed to get the optimum design parameters.Then the side coupling micro-ring resonant is fabricated using the InP semiconductor material based on the parameters.The micro-ring resonant cavity has the raius of 80 μm,waveguide width of 3 μm and the coupler gap of 1 μm.The test results show that the FSR is 0.75 nm,and the FWHM is 0.5 nm,which are consistent with the theoretical calculation results.

  12. A Silicon Optical Transistor

    CERN Document Server

    Varghese, Leo T; Wang, Jian; Gan, Fuwan; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-01

    A fundamental road block for all-optical information processing is the difficulty in realizing a silicon optical transistor with the ability to provide optical gain, input output isolation and buffer action. In this work, we demonstrate an all-optical transistor using optical nonlinearity in microrings. By using weak light to control strong light, we observed an On/Off ratio up to 20 dB. It can compensate losses in other optical devices and provide fan-out capability. The device is ultra compact and is compatible with current complementary metal-oxide-semiconductor (CMOS) processing.

  13. A Silicon Optical Transistor

    OpenAIRE

    Varghese, Leo T.; Fan, Li; WANG, Jian; Gan, Fuwan; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

    2012-01-01

    A fundamental road block for all-optical information processing is the difficulty in realizing a silicon optical transistor with the ability to provide optical gain, input output isolation and buffer action. In this work, we demonstrate an all-optical transistor using optical nonlinearity in microrings. By using weak light to control strong light, we observed an On/Off ratio up to 20 dB. It can compensate losses in other optical devices and provide fan-out capability. The device is ultra comp...

  14. 9.4 nm Tunable Vertically Coupled Microring Resonator Filter by Thermo-Optic Effect

    Institute of Scientific and Technical Information of China (English)

    Yuji Yanagase; Shunichi Yamagata; Yasuo Kokubun

    2003-01-01

    A wide range (9.4nm) tuning of vertically coupled microring resonator filter was demonstrated utilizing a large TO coefficient of polymer. The power consumption was about 60mW and no degradation of filter response was observed.

  15. Laser performance and thermal lensing in high-power diode-pumped Yb:KGW with athermal orientation

    Science.gov (United States)

    Hellström, J. E.; Bjurshagen, S.; Pasiskevicius, V.

    2006-04-01

    A comparative, experimental study of the high-power diode-pumped laser performance and thermal lensing properties between standard b-cut Yb:KGW and Yb:KGW cut along an athermal direction is presented. The results show that thermal lens properties in both the b-cut and the athermal direction-cut crystals are determined by anisotropic thermal expansion in Yb:KGW. Thermal gradients due to the pump beam cause thermal lensing even in the athermal direction-cut geometry. The thermal lens is much weaker and less astigmatic in the athermal direction-cut crystal, for the same absorbed power. These properties allow generation of better-quality laser beams with the athermal direction-cut crystal as compared to the b-cut crystal.

  16. UV trimming of polarization-independent microring resonator by internal stress and temperature control

    OpenAIRE

    Kobayashi, Naoki; Sato, Tomoyuki; Kobubun, Yasuo

    2010-01-01

    The temperature dependence of the resonant wavelength of vertically coupled microring resonator can be controlled via internal stress caused by the thermo-optic and photo-elastic effects. In the case of strong internal stress, a polarization-independent microring resonator can be realized by controlling the device surface temperature using a heater module; the temperature dependence of TE and TM polarizations are different due to the internal stress and thus manipulating temperatures, the res...

  17. Effective temperature and fluctuation-dissipation theorem in athermal granular systems: A review

    International Nuclear Information System (INIS)

    The definition and the previous measurements of a dynamics-relevant temperature-like quantity in granular media are reviewed for slow and fast particle systems. Especially, the validity of the fluctuation-dissipation theorem in such an athermal system is explored. Experimental evidences for the fluctuation-dissipation theorem relevant effect temperature support the athermal statistical mechanics, which has been widely explored in recent years by physicists. Difficulties encountered in defining temperature or establishing thermodynamics or statistical mechanics in non-equilibrium situations are discussed. (topical review - statistical physics and complex systems)

  18. Silicon Modulators, Switches and Sub-systems for Optical Interconnect

    Science.gov (United States)

    Li, Qi

    Silicon photonics is emerging as a promising platform for manufacturing and integrating photonic devices for light generation, modulation, switching and detection. The compatibility with existing CMOS microelectronic foundries and high index contrast in silicon could enable low cost and high performance photonic systems, which find many applications in optical communication, data center networking and photonic network-on-chip. This thesis first develops and demonstrates several experimental work on high speed silicon modulators and switches with record performance and novel functionality. A 8x40 Gb/s transmitter based on silicon microrings is first presented. Then an end-to-end link using microrings for Binary Phase Shift Keying (BPSK) modulation and demodulation is shown, and its performance with conventional BPSK modulation/ demodulation techniques is compared. Next, a silicon traveling-wave Mach- Zehnder modulator is demonstrated at data rate up to 56 Gb/s for OOK modulation and 48 Gb/s for BPSK modulation, showing its capability at high speed communication systems. Then a single silicon microring is shown with 2x2 full crossbar switching functionality, enabling optical interconnects with ultra small footprint. Then several other experiments in the silicon platform are presented, including a fully integrated in-band Optical Signal to Noise Ratio (OSNR) monitor, characterization of optical power upper bound in a silicon microring modulator, and wavelength conversion in a dispersion-engineered waveguide. The last part of this thesis is on network-level application of photonics, specically a broadcast-and-select network based on star coupler is introduced, and its scalability performance is studied. Finally a novel switch architecture for data center networks is discussed, and its benefits as a disaggregated network are presented.

  19. Analyzing and tailoring spectra of arbitrary microring resonator arrays based on six transfer cellsand simulated annealing algorithm

    Institute of Scientific and Technical Information of China (English)

    Xiaobei Zhang; Yunhong Ding; Wei Hong; Xinliang Zhang; Dexiu Huang

    2009-01-01

    A simple approach based on six transfer cells and simulated annealing algorithm for analyzing and tailoring the spectra of arbitrary microring resonator arrays is presented.Coupling coefficients,ring sizes,and waveguide lengths of microring resonator arrays can be arbitrary in this approach.After developing this approach,several examples are demonstrated and optimized for various configurations of microring resonator arrays.Simulation results show that this approach is intuitive,efficient,and intelligent for applications based on microring resonator arrays.

  20. Cascaded active silicon microresonator array cross-connect circuits for WDM networks-on-chip

    Science.gov (United States)

    Poon, Andrew W.; Xu, Fang; Luo, Xianshu

    2008-02-01

    We propose a design of an optical switch on a silicon chip comprising a 5 × 5 array of cascaded waveguide-crossing-coupled microring resonator-based switches for photonic networks-on-chip applications. We adopt our recently demonstrated design of multimode-interference (MMI)-based wire waveguide crossings, instead of conventional plain waveguide crossings, for the merits of low loss and low crosstalk. The microring resonator is integrated with a lateral p-i-n diode for carrier-injection-based GHz-speed on-off switching. All 25 microring resonators are assumed to be identical within a relatively wide resonance line width. The optical circuit switch can employ a single wavelength channel or multiple wavelength channels that are spaced by the microring resonator free spectral range. We analyze the potential performance of the proposed photonic network in terms of (i) light path cross-connections loss budget, and (ii) DC on-off power consumption for establishing a light path. As a proof-of-concept, our initial experiments on cascaded passive silicon MMI-crossing-coupled microring resonators demonstrate 3.6-Gbit/s non-return-to-zero data transmissions at on- and off-resonance wavelengths.

  1. Silicon Photonics Research in Hong Kong: Microresonator Devices and Optical Nonlinearities

    Science.gov (United States)

    Poon, Andrew W.; Zhou, Linjie; Xu, Fang; Li, Chao; Chen, Hui; Liang, Tak-Keung; Liu, Yang; Tsang, Hon K.

    In this review paper we showcase recent activities on silicon photonics science and technology research in Hong Kong regarding two important topical areas-microresonator devices and optical nonlinearities. Our work on silicon microresonator filters, switches and modulators have shown promise for the nascent development of on-chip optoelectronic signal processing systems, while our studies on optical nonlinearities have contributed to basic understanding of silicon-based optically-pumped light sources and helium-implanted detectors. Here, we review our various passive and electro-optic active microresonator devices including (i) cascaded microring resonator cross-connect filters, (ii) NRZ-to-PRZ data format converters using a microring resonator notch filter, (iii) GHz-speed carrier-injection-based microring resonator modulators and 0.5-GHz-speed carrier-injection-based microdisk resonator modulators, and (iv) electrically reconfigurable microring resonator add-drop filters and electro-optic logic switches using interferometric resonance control. On the nonlinear waveguide front, we review the main nonlinear optical effects in silicon, and show that even at fairly modest average powers two-photon absorption and the accompanied free-carrier linear absorption could lead to optical limiting and a dramatic reduction in the effective lengths of nonlinear devices.

  2. Wavelength-selective 4 × 4 nonblocking silicon optical router for networks-on-chip.

    Science.gov (United States)

    Hu, Ting; Qiu, Huiye; Yu, Ping; Qiu, Chen; Wang, Wanjun; Jiang, Xiaoqing; Yang, Mei; Yang, Jianyi

    2011-12-01

    We design and fabricate a wavelength-selective nonblocking 4 × 4 silicon optical router based on microring resonator for use in future integrated photonic interconnection networks. We successfully demonstrate 12 possible I/O routing paths and present 13 nonblocking operating states, including four broadcasting states, with worst-case extinction ratio and cross talk of 21.05 and -21.56 dB, respectively. Thermal tuning is employed to compensate the resonance shift of microring resonators caused by fabrication errors and adjust the resonance to match the International Telecommunication Unit grid with the channel spacing of 100 GHz. PMID:22139292

  3. Sensitivity and detection limit of dual-waveguide coupled microring resonator biosensors

    Institute of Scientific and Technical Information of China (English)

    Zhixuan Xia; Huaxiang Yi; Yao Chen; Zhiping Zhou

    2009-01-01

    We show that a linear relation exists between the device sensitivity and the quality (Q) factor of a dual-waveguide coupled microring resonator optical biosensor when the optimal conditions are satisfied. We also show that the detection limit depends on the loss coefficient and signal-to-nosie ratio (SNR) of the overall system, rather than the circumference of the ring. For a microring resonator sensor whose Q factor is 20000, the detection limit is found to be about 10-7 with 30-dB SNR, which is in good agreement with reported experimental data. These results indicate that loss reduction is the top priority in the design and fabrication of highly sensitive microring resonator optical biosensors.

  4. Optimization of adiabatic microring resonators with few-mode and high-Q resonances.

    Science.gov (United States)

    Li, Ruifei; Zhou, Linjie; Xie, Jingya; Xie, Anbang; Chen, Jianping

    2015-12-01

    We present the theoretical analysis and experimental demonstration of adiabatic microring resonators. The resonators are halfway between microdisk and microring preserving the good properties of both the microdisk (high Q-factor) and the microring (internal mode rejection). Device modeling based on the coupled-mode theory suggests that both the internal and external decay rates should be low in order to obtain high-Q and high extinction ratio resonances. The internal decay is modal-order-dependent and significantly affected by the adiabatic tapering rate of the ring waveguide. The external delay is determined by the modal effective index difference between the bus and ring waveguides at the coupling point under a fixed gap. Upon optimization of the resonator system, two resonance modes in the measured device are measured with one possessing a high Q-factor. PMID:26836679

  5. Microring resonator-based optical router for photonic networks-on-chip

    Science.gov (United States)

    Zhihua, Yu; Qi, Zhang; Xin, Jin; Juan, Zhao; Hadi, Baghsiahi; Selviah, D. R.

    2016-07-01

    We report the design and analysis of a non-blocking microring resonator-based optical switched router, which can be used as a switch node to construct a large photonic routing network on chips. The proposed optical router has sixteen microrings, fourteen crossings and four 90° waveguide bends, which could be tuned through the thermo-optic (TO) or electro-optic (EO) effect. Compared with a previously described 5 × 5 optical switching router, our router comprises fewer microring resonators (MRRs), crossings and bends, which results in a more compact design, a higher switching speed, a lower loss and a lower optical power consumption. In addition, all the rings operate at the same wavelength making it scalable to a network of any size.

  6. Single mode lasing in transversely multi-moded PT-symmetric microring resonators

    CERN Document Server

    Hodaei, Hoseein; Hassan, Absar U; Hayenga, William E; Heinrich, Matthias; Christodoulides, Demetrios N; Khajavikhan, Mercedeh

    2016-01-01

    Single mode lasing is experimentally demonstrated in a transversely multi-moded InP-based semiconductor microring arrangement. In this system, mode discrimination is attained by judiciously utilizing the exceptional points in a parity-time (PT) symmetric double microring configuration. The proposed scheme is versatile, robust to small fabrication errors, and enables the device to operate in a stable manner considerably above threshold while maintaining spatial and spectral purity. The results presented here pave the way towards a new class of chip-scale semiconductor lasers that utilize gain/loss contrast as a primary mechanism for mode selection.

  7. Linearization of Mach-Zehnder modulator using microring-based all-pass filter

    Institute of Scientific and Technical Information of China (English)

    Jianyi Yang; Fan Wang; Xiaoqing Jiang; Hongchang Qu; Yaming Wu; Minghua Wang; Yuelin Wang

    2005-01-01

    @@ By applying the microring resonator to the Mach-Zehnder (MZ) optical modulator and employing the super-linear phase change characteristic of the all-pass filter, the sublinear modulation curve of the conventional MZ modulator is highly linearized. With properly controlled power coupling between the microring and the arm of the MZ modulator, the third-order distortion can be suppressed. If the transmission coefficient is set between 0.25 and 0.42, the linearity range larger than 90% can be easily achieved. The maximum linearity range is even up to 99.5%.

  8. Microring resonators fabricated by electron beam bleaching of chromophore doped polymers

    International Nuclear Information System (INIS)

    Decomposition of chromophore molecules under direct electron beam irradiation reduces the refractive index of chromophore containing polymers. The induced refractive index contrast between the exposed and unexposed regions is high enough for waveguide bends of small radius and thus microring resonator devices. This electron beam bleaching of chromophore-containing polymers provides a fabrication approach for nonlinear polymer optical waveguide devices. Fabrication of high quality microring resonators with critical feature size on the order of 100 nm was demonstrated with this technique in an electro-optic polymer that contains YL124 chromophores

  9. Probing relevant ingredients in mean-field approaches for the athermal rheology of yield stress materials

    OpenAIRE

    Puosi, Francesco; Olivier, Julien,; Martens, Kirsten

    2015-01-01

    International audience Although the notion of mechanical noise is expected to play a key role in the non-linear rheology of athermally sheared amorphous systems, its characterization has so far remained elusive. Here, we show using molecular dynamic simulations that in spite of the presence of strong spatio-temporal correlations in the system, the local stress exhibits normal diffusion under the effect of the mechanical noise in the finite driving regime. The diffusion constant appears to ...

  10. Athermalization in atomic force microscope based force spectroscopy using matched microstructure coupling

    OpenAIRE

    Torun, H.; Finkler, O.; Degertekin, F. L.

    2009-01-01

    The authors describe a method for athermalization in atomic force microscope (AFM) based force spectroscopy applications using microstructures that thermomechanically match the AFM probes. The method uses a setup where the AFM probe is coupled with the matched structure and the displacements of both structures are read out simultaneously. The matched structure displaces with the AFM probe as temperature changes, thus the force applied to the sample can be kept constant without the need for a ...

  11. Surface-induced First Order Transition in Athermal Polymer/Nanoparticle Blends

    OpenAIRE

    McGarrity, E.S.; Frischknecht, A. L.; Frink, L. J. D.; Mackay, M E

    2007-01-01

    We investigate the phase behavior of athermal polymer/nanoparticle blends near a hard substrate. We apply the density functional theory of Tripathi and Chapman to these blends. We find a first order phase transition where the nanoparticles expel the polymer from the surface to form a monolayer. The transition density depends on the polymer length and the system bulk density. The effect is due to the packing entropy of the species and configurational entropy of the polymer. The simplicity of t...

  12. Simulation and Analysis of a Metamaterial Sensor Based on a Microring Resonator

    Directory of Open Access Journals (Sweden)

    Yaozhong Lan

    2011-05-01

    Full Text Available Metamaterials are artificial media structured on a size scale smaller than the wavelength of external stimuli, that may provide novel tools to significantly enhance the sensitivity and resolution of the sensors. In this paper, we derive the dispersion relation of hollow cylindrical dielectric waveguide, and compute the resonant frequencies and Q factors of the corresponding Whispering-Gallery-Modes (WGM. A metamaterial sensor based on microring resonator operating in WGM is proposed, and the resonance intensity spectrum curves in the frequency range from 185 to 212 THz were studied under different sensing conditions. Full-wave simulations, considering the frequency shift sensitivity influenced by the change of core media permittivity, the thickness and permittivity of the adsorbed substance, prove that the sensitivity of the metamaterial sensor is more than 7 times that of the traditional microring resonator sensor, and the metamaterial layer loaded in the inner side of the microring doesn’t affect the high Q performance of the microring resonator.

  13. Simulation and analysis of a metamaterial sensor based on a microring resonator.

    Science.gov (United States)

    Huang, Ming; Yang, Jingjing; Jun, Sun; Mu, Shujuan; Lan, Yaozhong

    2011-01-01

    Metamaterials are artificial media structured on a size scale smaller than the wavelength of external stimuli, that may provide novel tools to significantly enhance the sensitivity and resolution of the sensors. In this paper, we derive the dispersion relation of hollow cylindrical dielectric waveguide, and compute the resonant frequencies and Q factors of the corresponding Whispering-Gallery-Modes (WGM). A metamaterial sensor based on microring resonator operating in WGM is proposed, and the resonance intensity spectrum curves in the frequency range from 185 to 212 THz were studied under different sensing conditions. Full-wave simulations, considering the frequency shift sensitivity influenced by the change of core media permittivity, the thickness and permittivity of the adsorbed substance, prove that the sensitivity of the metamaterial sensor is more than 7 times that of the traditional microring resonator sensor, and the metamaterial layer loaded in the inner side of the microring doesn't affect the high Q performance of the microring resonator. PMID:22163933

  14. Optimization of driving signal for thermal modulation of a Microring Resonator

    NARCIS (Netherlands)

    Meijerink, R.; Geuzebroek, D.H.; Klein, E.J.; Kelderman, H.; Dekker, R.; Diemeer, M.B.J.; Driessen, A.; Ridder, de R.M.; Altena, G.; Dekker, R.

    2003-01-01

    The thermal modulation of a microring resonator with integrated chromium heater has been investigated. It is shown that the modulation speed can be enhanced by optimizing the driving signal, i.e. creating an overshoot and biasing the signal. Measurements at a modulation frequency of 500 Hz showed th

  15. Electrooptical modulators and filters for fiber optic systems based on microring resonators

    Directory of Open Access Journals (Sweden)

    Klyuchnik N. T.

    2011-08-01

    Full Text Available The results of investigation in design of high speed modulators based on planar microring resonators were made. The design and features of microresonator structures in optical modulators and Mach–Zehnder interferometers were considered. The possibilities of the use of microresonators as wavelength selectors, switch channels, multiplexers/demultiplexers, switches and routers are shown.

  16. Integrated micro-plasmas in silicon operating in helium

    OpenAIRE

    Dussart, Remi; J. Overzet, Lawrence; Lefaucheux, P; Dufour, Thierry; Kulsreshath, M; Mandra, Monali; Tillocher, Thomas; Aubry, O; Dozias, S; Ranson, P; Goeckner, M

    2016-01-01

    International audience Microplasma arrays operating in helium in a DC regime have been produced in silicon microre-actors. Cathode boundary layer (CBL) type microdevices were elaborated using clean room facilities and semiconductor processing techniques. Ignition of the micro-discharge arrays having either 50 or 100 µm diameter cavities was studied. Two different structures (isotropically etched or anisotropically etched cavity) and various conditions (the two different voltage polarities,...

  17. Subextensive Scaling in the Athermal, Quasistatic Limit of Amorphous Matter in Plastic Shear Flow

    Energy Technology Data Exchange (ETDEWEB)

    Maloney, C; Lemaitre, A

    2004-01-29

    We present the results of numerical simulations of an atomistic system undergoing plastic shear flow in the athermal, quasistatic limit. The system is shown to undergo cascades of local re-arrangements, associated with quadrupolar energy fluctuations, which induce system-spanning events organized into lines of slip oriented along the Bravais axes of the simulation cell. A finite size scaling analysis reveals subextensive scaling of the energy drops and participation numbers, linear in the length of the simulation cell, in good agreement with the real-space structure of plastic events

  18. 3D integrated hybrid silicon laser.

    Science.gov (United States)

    Song, Bowen; Stagarescu, Cristian; Ristic, Sasa; Behfar, Alex; Klamkin, Jonathan

    2016-05-16

    Lasers were realized on silicon by flip-chip bonding of indium phosphide (InP) devices containing total internal reflection turning mirrors for surface emission. Light is coupled to the silicon waveguides through surface grating couplers. With this technique, InP lasers were integrated on silicon. Laser cavities were also formed by coupling InP reflective semiconductor optical amplifiers to microring resonator filters and distributed Bragg reflector mirrors. Single-mode continuous wave lasing was demonstrated with a side mode suppression ratio of 30 dB. Up to 2 mW of optical power was coupled to the silicon waveguide. Thermal simulations were also performed to evaluate the low thermal impedance afforded by this architecture and potential for high wall-plug efficiency. PMID:27409867

  19. Athermal exploration of Kagome artificial spin ice states by rotating field protocols

    International Nuclear Information System (INIS)

    Artificial Kagome spin ice arrays consisting of nanomagnets are model systems for the study of geometrical frustration, for which field demagnetization methods are insufficient to drive them in their ground states. Here the efficiency of different demagnetization protocols (involving rotation) is studied by micromagnetic simulations. The hysteresis loop of each element is greatly influenced by the magnetic state of the nearest neighbors, not only by the expected shift due to dipolar interaction bias, but as it regards the loop shape and width itself, which presents a correction to the usual macrospin calculation assumptions. It is shown that rotation in angular steps a little less than 180° is the most effective process in accessing the largest possible number states before ending up near the ground state even in the absence of any disorder which is shown to represent the most unfavorable case. - Highlights: • Optimized athermal demagnetization process for a two-dimensional artificial kagome spin ice. • States with flux closure in small groups of elements difficult to obtain athermally in systems with N·30. • The dipolar interaction field not only biases but also changes the loop width. • Interactions lead to array size dependent remanence enhancement

  20. Development of highly compact and low power consumption athermal military laser designators

    Science.gov (United States)

    Sijan, A.

    2012-10-01

    The utility of military lasers, particularly in the area of laser designation for laser-guided weapons, is well understood. Laser systems based on Nd:YAG have been fielded since the 1980's and over the last three decades have introduced incremental technology steps to improve performance and weight. The most recent technology step has been the introduction of athermal lasers based on laser-diode pumping of Nd:YAG and products are now emerging for use on the battlefield. The technical performance, efficiency, size, weight and power for these lasers, has been key to driving the new production designs. In this paper, we review the development of the laser designs and their introduction since the advent of laser designation. In particular, we compare the relative performance and characteristics over the evolution of fielded laser designators. Moreover, we will review the key building blocks for the design of athermal lasers and describe some critical design issues for engineering and productionisation of a military laser system, including removal of thermal lensing, novel diode-pumping schemes and robustness over the environment. These will be exemplified using results from the development of the SELEX Galileo Type 163 Laser Target Designators. These will cover not only technical performance, power and efficiency, but also thermal management, mass, volume, cost and overall complexity for manufacture.

  1. PT-symmetric microring lasers: Self-adapting broadband mode-selective resonators

    CERN Document Server

    Hodaei, Hossein; Heinrich, Matthias; Christodoulides, Demetrios N; Khajavikhan, Mercedeh

    2014-01-01

    We demonstrate experimentally that stable single longitudinal mode operation can be readily achieved in PT-symmetric arrangements of coupled microring resonators. Whereas any active resonator is in principle capable of displaying single-wavelength operation, selective breaking of PT-symmetry can be utilized to systematically enhance the maximum achievable gain of this mode, even if a large number of competing longitudinal or transverse resonator modes fall within the amplification bandwidth of the inhomogeneously broadened active medium. This concept is robust with respect to fabrication tolerances, and its mode selectivity is established without the need for additional components or specifically designed filters. Our results may pave the way for a new generation of versatile cavities lasing at a desired longitudinal resonance. Along these lines, traditionally highly multi-moded microring resonator configurations can be fashioned to suppress all but one longitudinal mode.

  2. Resonance-spacing tuning over whole free spectral range in a single microring resonator

    Science.gov (United States)

    Gao, Ge; Yuan, Shuai; Li, Danping; Xia, Jinsong

    2016-03-01

    In this paper, we present a single microring resonator structure formed by incorporating a reflectivity-tunable loop mirror for the tuning of resonance spacing. Based on the optical mode-splitting in the resonator structure, spacing between two adjacent resonances can be tuned from zero to one whole free spectral range (FSR) by controlling the coupling strength between the two counter-propagating degenerate modes in the microring resonator. In experiment, by integrating metallic microheater, the resonance-spacing tuning over the whole FSR (1.17 nm) is achieved within 9.82 mW heating power dissipation. The device is expected to have potential applications in reconfigurable optical filtering and microwave photonics.

  3. A Proposal and Demonstration for Photonic Generation of a Microwave Signal by Incorporating a Microring Resonator

    Institute of Scientific and Technical Information of China (English)

    CHEN Guo-Jie; HUANG De-Xiu; ZHANG Xin-Liang; CAO Hui; CHEN Wei-Cheng

    2009-01-01

    A proposal for photonic generation of a microwave signal is presented by employing a dual wavelength erbiumdoped fibre ring laser.In the laser,a microring resonator is cascaded with a tunable bandpass filter to serve as a dual-wavelength selector,an unpumped polarization maintaining erbium-doped fibre is used as a saturable absorber.By replacing the microring resonator with a delay inter[erometer to verify the proposal,a wavelengthtunable dual wavelength single longitudinal mode laser is demonstrated,and a microwave signal at 10.01 GHz with a linewidth of less than 25 kHz is obtained by beating the two wavelengths at a photodetector.

  4. Embedded coupled microrings with high-finesse and close-spaced resonances for optical signal processing.

    Science.gov (United States)

    Souza, Mario C M M; Barea, Luis A M; Vallini, Felipe; Rezende, Guilherme F M; Wiederhecker, Gustavo S; Frateschi, Newton C

    2014-05-01

    Single microring resonators have been used in applications such as wavelength multicasting and microwave photonics, but the dependence of the free spectral range with ring radius imposes a trade-off between the required GHz optical channel spacing, footprint and power consumption. We demonstrate four-channel all-optical wavelength multicasting using only 1 mW of control power, with converted channel spacing of 40-60 GHz. Our device is based on a compact embedded microring design fabricated on a scalable SOI platform. The coexistence of close resonance spacing and high finesse (205) in a compact footprint is possible due to enhanced quality factors (30,000) resulting from the embedded configuration and the coupling-strength dependence of resonance spacing, instead of ring size. In addition, we discuss the possibility of achieving continuously mode splitting from a single-notch resonance up to 40 GHz. PMID:24921744

  5. A Proposal and Demonstration for Photonic Generation of a Microwave Signal by Incorporating a Microring Resonator

    International Nuclear Information System (INIS)

    A proposal for photonic generation of a microwave signal is presented by employing a dual wavelength erbium-doped fibre ring laser. In the laser, a microring resonator is cascaded with a tunable bandpass filter to serve as a dual-wavelength selector, an unpumped polarization maintaining erbium-doped fibre is used as a saturable absorber. By replacing the microring resonator with a delay interferometer to verify the proposal, a wavelength-tunable dual wavelength single longitudinal mode laser is demonstrated, and a microwave signal at 10.01 GHz with a linewidth of less than 25 kHz is obtained by beating the two wavelengths at a photodetector. (fundamental areas of phenomenology (including applications))

  6. Optical Microring Resonators based on ion-implanted LiNbO3 ridge waveguides

    OpenAIRE

    Montanari, Giovanni Battista

    2010-01-01

    The growing interest for Integrated Optics for sensing, telecommunications and even electronics is driving research to find solutions to the new challenges issued by a more and more fast, connected and smart world. This thesis deals with the design, the fabrication and the characterisation of the first prototypes of Microring Resonators realised using ion implanted Lithium Niobate (LiNbO3) ridge waveguides. Optical Resonator is one among the most important devices for all tasks describ...

  7. The Electromechanical Behavior of a Micro-Ring Driven by Traveling Electrostatic Force

    Directory of Open Access Journals (Sweden)

    Kuo-Yi Huang

    2012-01-01

    Full Text Available There is no literature mentioning the electromechanical behavior of micro structures driven by traveling electrostatic forces. This article is thus the first to present the dynamics and stabilities of a micro-ring subjected to a traveling electrostatic force. The traveling electrostatic force may be induced by sequentially actuated electrodes which are arranged around the flexible micro-ring. The analysis is based on a linearized distributed model considering the electromechanical coupling effects between electrostatic force and structure. The micro-ring will resonate when the traveling speeds of the electrostatic force approach some critical speeds. The critical speeds are equal to the ratio of the natural frequencies to the wave number of the correlative natural mode of the ring. Apart from resonance, the ring may be unstable at some unstable traveling speeds. The unstable regions appear not only near the critical speeds, but also near some fractions of some critical speeds differences. Furthermore the unstable regions expand with increasing driving voltage. This article may lead to a new research branch on electrostatic-driven micro devices.

  8. Generation of a 640 Gbit/s NRZ OTDM signal using a silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Hu, Hao; Galili, Michael;

    2011-01-01

    A 640 Gbit/s NRZ OTDM signal has been successfully generated for the first time by format conversion of a 640 Gbit/s OTDM signal from RZ to NRZ. First, a coherent 640 Gbit/s OTDM RZ signal is generated by wavelength conversion of the original incoherent OTDM signal utilizing Kerr switching in a...... than both the original incoherent 640 Gbit/s and the wavelength converted coherent 640 Gbit/s RZ OTDM signals has been obtained. Bit error ratio measurements show error free (...

  9. Athermal domain-wall creep near a ferroelectric quantum critical point.

    Science.gov (United States)

    Kagawa, Fumitaka; Minami, Nao; Horiuchi, Sachio; Tokura, Yoshinori

    2016-01-01

    Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under realistic electric-field magnitudes. Here we show that such frozen ferroelectric domain walls recover their mobility under the influence of quantum fluctuations. Nonlinear permittivity and polarization-retention measurements of an organic charge-transfer complex reveal that ferroelectric domain-wall creep occurs via an athermal process when the system is tuned close to a pressure-driven ferroelectric quantum critical point. Despite the heavy masses of material building blocks such as molecules, the estimated effective mass of the domain wall is comparable to the proton mass, indicating the realization of a ferroelectric domain wall with a quantum-particle nature near the quantum critical point. PMID:26880041

  10. Athermal mechanisms of size-dependent crystal flow gleaned from three-dimensional discrete dislocation simulations

    International Nuclear Information System (INIS)

    Recent experimental studies have revealed that micrometer-scale face-centered cubic (fcc) crystals show strong strengthening effects, even at high initial dislocation densities. We use large-scale three-dimensional discrete dislocation simulations (DDS) to explicitly model the deformation behavior of fcc Ni microcrystals in the size range of 0.5-20 μm. This study shows that two size-sensitive athermal hardening processes, beyond forest hardening, are sufficient to develop the dimensional scaling of the flow stress, stochastic stress variation, flow intermittency and high initial strain-hardening rates, similar to experimental observations for various materials. One mechanism, source-truncation hardening, is especially potent in micrometer-scale volumes. A second mechanism, termed exhaustion hardening, results from a breakdown of the mean-field conditions for forest hardening in small volumes, thus biasing the statistics of ordinary dislocation processes

  11. Density scaling and quasiuniversality of flow-event statistics for athermal plastic flows.

    Science.gov (United States)

    Lerner, Edan; Bailey, Nicholas P; Dyre, Jeppe C

    2014-11-01

    Athermal steady-state plastic flows were simulated for the Kob-Andersen binary Lennard-Jones system and its repulsive version in which the sign of the attractive terms is changed to a plus. Properties evaluated include the distributions of energy drops, stress drops, and strain intervals between the flow events. We show that simulations at a single density in conjunction with an equilibrium-liquid simulation at the same density allow one to predict the plastic flow-event statistics at other densities. This is done by applying the recently established "hidden scale invariance" of simple liquids to the glass phase. The resulting scaling of flow-event properties reveals quasiuniversality, i.e., that the probability distributions of energy drops, stress drops, and strain intervals in properly reduced units are virtually independent of the microscopic pair potentials. PMID:25493793

  12. Mössbauer studies on athermal martensite formation in an Fe–Ni–Mn alloy

    Indian Academy of Sciences (India)

    A Aydin; E Guler; H Aktas; H Gungunes

    2002-10-01

    In this study, austenite–martensite phase transformations which are formed by cooling effect in Fe–30% Ni–0.2% Mn alloy are investigated with Mössbauer spectroscopy and scanning electron microscopy. The single peak of the paramagnetic phase and the six peaks of the ferromagnetic phase of Fe–30% Ni–0.2% Mn alloy were observed in the Mössbauer spectrum. The internal magnetic field strength of ferromagnetic martensite phase was determined as 33.8 and the isomer shift values were determined as – 0.11 mm.sec–1 and – 0.06 mm.sec–1, respectively, for the austenite and martensite phases. In this alloy, athermal transformation was observed. The results obtained are in agreement with literature.

  13. Understanding entangled polymers: What we can learn from athermal chain packings

    Science.gov (United States)

    Karayiannis, Nikos

    2012-02-01

    The study of random and ordered packings (from atoms and colloidal particles to sand grains) has been the focus of extensive research. This is not surprising since an understanding of the mechanisms that control morphology and packing is the key to the design and synthesis of novel ``smart'' materials and functionalities. In particular, the study of packings of chain molecules presents challenges but also insights which are absent in monatomic systems and further allows for a direction comparison with them. In this contribution we give an overview of our work on very dense and nearly jammed packings of athermal polymers. We show that chain molecules can be as efficiently and as densely packed as monatomic analogs up to the same maximally random jammed state. We also show that an exact correspondence can be established between the statistical-mechanical ensembles of packings of monatomic, and chain systems, which yields insights on the universality of jamming. By studying the effect of concentration on polymer size and on the underlying network of topological hindrances we precisely identify the distinct universal scaling regimes and the corresponding exponents. An unsuspected connection, valid from dilute up to very dense assemblies, is established between knots (of intermolecular origin) and entanglements (intermolecular constraints). We finally show that, against expectations, entropy-driven crystallization can occur in dense systems of athermal polymers once a critical volume fraction is reached. Such phase transition is driven by the increase in translational entropy: ordered sites exhibit enhanced mobility as their local free volume becomes more spherical and symmetric. Incipient nuclei develop well defined, stack-faulted layered crystal morphologies with a single stacking direction. The ordering transition and the resulting complex morphologies are analyzed, highlighting similarities and differences with respect to monatomic crystallization.

  14. Negative coupling and coupling phase dispersion in a silicon quadrupole micro-racetrack resonator.

    Science.gov (United States)

    Bachman, Daniel; Tsay, Alan; Van, Vien

    2015-07-27

    We report the first experimental study of the effects of coupling phase dispersion on the spectral response of a two-dimensionally coupled quadrupole micro-racetrack resonator. Negative coupling in the system is observed to manifest itself in the sharp stop band transition and deep extinction in the pseudo-elliptic filter response of the quadrupole. The results demonstrate the feasibility of realizing advanced silicon microring devices based on the 2D coupling topology with general complex coupling coefficients. PMID:26367666

  15. Tunable frequency combs based on dual microring resonators

    CERN Document Server

    Miller, Steven A; Ramelow, Sven; Luke, Kevin; Dutt, Avik; Farsi, Alessandro; Gaeta, Alexander L; Lipson, Michal

    2015-01-01

    In order to achieve efficient parametric frequency comb generation in microresonators, external control of coupling between the cavity and the bus waveguide is necessary. However, for passive monolithically integrated structures, the coupling gap is fixed and cannot be externally controlled, making tuning the coupling inherently challenging. We design a dual-cavity coupled microresonator structure in which tuning one ring resonance frequency induces a change in the overall cavity coupling condition. We demonstrate wide extinction tunability with high efficiency by engineering the ring coupling conditions. Additionally, we note a distinct dispersion tunability resulting from coupling two cavities of slightly different path lengths, and present a new method of modal dispersion engineering. Our fabricated devices consist of two coupled high quality factor silicon nitride microresonators, where the extinction ratio of the resonances can be controlled using integrated microheaters. Using this extinction tunability...

  16. Deposited silicon photonics: Optical interconnect devices in polycrystalline silicon

    Science.gov (United States)

    Preston, Kyle Jonathan

    Silicon photonics has tremendous potential to provide high-bandwidth and low-power data communication for applications such as computing and telecommunication, over length scales ranging from 100 kilometers over fiber to centimeter-length on-chip waveguides. Many silicon photonic building blocks have been demonstrated to date, but critical work remains to determine the best approaches for integrating together silicon photonics with microelectronics. In this thesis, I explore a novel method for integration of silicon photonics on the CMOS platform by using a deposited material: polycrystalline silicon. I will show the first demonstrations of electrically-active optical filters, modulators, and photodetectors in this material. In principle, this material platform would allow for the integration of silicon photonic devices and systems on top of any substrate, including complex CMOS and memory chips or even glass and plastic substrates. In Chapter 1, I introduce the state-of-the-art in silicon photonics, describe several integration schemes under development, and introduce the idea of using deposited materials. In Chapter 2, I demonstrate the use of polysilicon to make integrated microring resonators, and show the integration of different silicon materials together. Chapter 3 discusses the use of polysilicon as both an optical waveguiding layer and an electrode material in slot waveguides for the application of light emitters. Chapter 4 demonstrates the use of a pump-probe experiment to measure the free carrier lifetime in the material and demonstrate all-optical modulation. In Chapter 5, I demonstrate the first high-speed integrated electro-optic modulator in polysilicon, a necessary device for optical transmitters. In Chapter 6, I show how defects inside the same material enable integrated photodetectors at near-infrared telecommunication wavelengths. Chapter 7 shows initial results in adapting the material processing for lower temperatures, necessary for integration

  17. Novel architecture for ultra-stable micro-ring resonator based optical frequency combs

    CERN Document Server

    Pasquazi, Alessia; Peccianti, Marco; Clerici, Matteo; Ferrera, Marcello; Razzari, Luca; Duchesne, David; Little, Brent E; Chu, Sai T; Moss, David J; Morandotti, Roberto

    2014-01-01

    We report a novel geometry for OPOs based on nonlinear microcavity resonators. This approach relies on a self-locked scheme that enables OPO emission without the need for thermal locking of the pump laser to the microcavity resonance. By exploiting a CMOS-compatible microring resonator, we achieve oscillation with a complete absence of shutting down, or self-terminating behavior, a very common occurrence in externally pumped OPOs. Further, this scheme consistently produces very wide bandwidth (>300nm, limited by our experimental set-up) combs that oscillate at a spacing of the FSR of the micro cavity resonance.

  18. Transport properties of photonic topological insulators based on microring resonator array

    CERN Document Server

    Jiang, Xiaohui; Yin, Chenxuan; Zhang, Yanfeng; Chen, Hui; Yu, Siyuan

    2016-01-01

    An array of ring resonators specifically designed can perform as a topological insulator. We conduct simulations using both Tight-Binding Model (TBM) and Transfer Matrix Method (TMM) to analyze the transport properties of such optical structure, verifying the presence of robust topological edge states which is immune to disorder and defect. We have also made a comparison between these two methods, of which results suggesting that TBM is only applicable under weakly-coupling condition while TMM is more rigorous. Finally we compared the structure with common microring array and coupled resonator optical waveguide (CROW) to demonstrate that it has desired transmission properties with wide and flat spectral response.

  19. Deterministic single soliton generation and compression in microring resonators avoiding the chaotic region

    CERN Document Server

    Jaramillo-Villegas, Jose A; Wang, Pei-Hsun; Leaird, Daniel E; Weiner, Andrew M

    2015-01-01

    A path within the parameter space of phase detuning and pump power is demonstrated in order to obtain a single cavity soliton (CS) with certainty in SiN microring resonators in the anomalous dispersion regime. Once the single CS state is reached, it is possible to continue a path to compress it, broadening the corresponding single FSR frequency Kerr comb. This behavior is first obtained by identifying the regions in the parameter space via numerical simulations of the Lugiato-Lefever equation (LLE), and second, defining a path from the stable modulation instability (SMI) region to the stable cavity solitons (SCS) region avoiding the chaotic and unstable regions.

  20. Chiral Symmetry Breaking in Micro-Ring Optical Cavity By Engineered Dissipation

    CERN Document Server

    Shu, Fang-Jie; Zou, Xu-Bo; Yang, Lan

    2016-01-01

    We propose a method to break the chiral symmetry of light in traveling wave resonators by coupling the optical modes to a lossy channel. Through the engineered dissipation, an indirect dissipative coupling between two oppositely propagating modes can be realized. Combining with reactive coupling, it can break the chiral symmetry of the resonator, allowing light propagating only in one direction. The chiral symmetry breaking is numerically verified by the simulation of an electromagnetic field in a micro-ring cavity, with proper refractive index distributions. This work provokes us to emphasize the dissipation engineering in photonics, and the generalized idea can also be applied to other systems.

  1. Reconfigurable non-blocking four-port optical router based on microring resonators.

    Science.gov (United States)

    Yang, Lin; Jia, Hao; Zhao, Yunchou; Chen, Qiaoshan

    2015-03-15

    A reconfigurable non-blocking four-port optical router with the least optical switches is demonstrated. The device is based on microring resonators tuned through thermo-optic effect. The optical signal-to-noise ratio of the device at its nine routing states is about 15 dB. A 25 Gbps data transmission has been performed on its whole 12 optical links, and 8-channel wavelength division multiplexing data transmission has been implemented to expand its communication capacity. The energy efficiency of the device is 23 fJ/bit, and the response time of the device is about 25 μs. PMID:25768199

  2. On the equation of state of athermal lattice chains: Test of mean-field and scaling theories in two dimensions

    Science.gov (United States)

    Dickman, Ronald

    1989-07-01

    A recently devised method for determining the pressure in lattice simulations is applied to two-dimensional, athermal chains of 40, 80, and 160 segments, over the full range of fluid densities, from dilute solution to dense melt. The results are used to test Bawendi and Freed's correction to Flory-Huggins mean-field theory, and the des Cloizeaux scaling law. The scaling of the mean-square end-to-end distance with density is also discussed.

  3. Thermoelastic damping effect of the micro-ring resonator with irregular mass and stiffness

    Science.gov (United States)

    Kim, Jung-Hwan; Kim, Ji-Hwan

    2016-05-01

    Fundamentally, vibration characteristic is a main factor for the stability of structures. In this regard, the irregularity of mass and stiffness distributions for the structure have been an interesting issue for many years. Recently, the Micro Electro Mechanical Systems (MEMS) are developed for various applications such as gyro sensors. In the present work, in-plane vibration of micro-ring structure with multiple finite-sized imperfections is investigated. Then, the unbalance of the structure is represented using Heaviside Step Function for the inextensional modeling of the ring. Also, thermoelastic damping (TED) due to internal friction is studied based on Fourier's one-dimensional heat conduction equation using Laplace Transform. To obtain the quality-factors (Q-factors) for imperfect micro-ring, analytical solutions are calculated from governing equations of motion with TED. And then, the natural frequencies and the Q-factors are observed to separate into lower and higher modes. Additionally, the vibration mode shapes are presented, and the frequency trimming concept due to attached imperfections is investigated.

  4. Silicon Photonic Devices for Optical Computing

    Science.gov (United States)

    Qiu, Ciyuan

    The requirement for high performance computer will be significantly increased by the fast development of the internet. However, traditional CMOS computer will meet its bottleneck due to the miniaturization problem. Optical computer comes to be the leading candidate to solve this issue. Silicon photonic technology has tremendous developments and thus it becomes an ideal platform to implement optical computing system. In Chapter 1, I will first show the development of the optical computing and silicon photonic technology. I will also discuss some key nonlinear optical effects of silicon photonic devices. Based on the current silicon photonic technology, I will then make a brief introduction on the optical direct logic for the 2D optical computing and spatial light modulator for the 3D optical computing, both of which will be discussed in detail in the followed chapters. In Chapter 2, I will discuss micro-ring resonator which is the key element of optical directed logic circuit discussed in Chapter 3. I will give the analytical model based on photonic circuit to explain the performance of the micro-ring resonator. The group delay and the loss of the micro-ring resonator will be analyzed. And I will also show the active tuning of the transmission spectrum by using the nonlinear effect of silicon. In Chapter 3, I will show a revised optical direct-logic (DL) circuit for 2D optical computer that is well suited for complementary metal-oxide-semiconductor (CMOS)-compatible silicon photonics. It can significantly reduce the latency compared with traditional CMOS computers. For proof of concept, I demonstrated a scalable and reconfigurable optical directed-logic architecture consisting of a regular array of micro-ring resonator based optical on-off switches. The switches are controlled by electrical input logic signals through embedded p-i-n junctions. The circuit can be reconfigured to perform any 2x2 combinational logic operations by thermally tuning the operation modes of

  5. Boundary-induced segregation in nanoscale thin films of athermal polymer blends.

    Science.gov (United States)

    Teng, Chih-Yu; Sheng, Yu-Jane; Tsao, Heng-Kwong

    2016-05-18

    The surface segregation of binary athermal polymer blends confined in a nanoscale thin film was investigated by dissipative particle dynamics. The polymer blend included linear/linear, star/linear, bottlebrush/linear, and rod-like/linear polymer systems. The segregation was driven by purely entropic effects and two different mechanisms were found. For the linear/linear and star/linear polymer blends, the smaller sized polymers were preferentially segregated to the boundary because their excluded volumes were smaller than those of the matrix polymers. For the bottlebrush/linear and rod-like/linear polymer blends, the polymers with a larger persistent length were preferentially segregated to the boundary because they favored staying in the depletion zone by alignment with the wall. Our simulation outcome was consistent with experimental results and also agreed with theoretical predictions - that is, a surface excess dictated by the chain ends for the branch/linear system. These consequences are of great importance in controlling the homogeneity and surface properties of polymer blend thin films. PMID:27108653

  6. Athermal fading of luminescence in Al2 O3 ceramic substrates

    Science.gov (United States)

    Terry, Ian; Kouroukla, Eftychia; Bailiff, Ian K.

    2015-03-01

    Retrospective dosimetry aims to reconstruct ionising radiation dose to populations following a radiological incident using materials not designed for that purpose. Sintered alumina ceramic can function as a dosimeter with its luminescence properties and related trapped charge storage mechanism. Its widespread use as a substrate in surface mount devices and incorporation in devices such as mobile phones make it a ubiquitous potential dosimeter. We investigated the optically (OSL) and thermally (TL) stimulated luminescence properties of sintered alumina substrates. In contrast to their single crystal analogue developed for personal dosimetry, Al2O3:C, the substrates exhibit a significant loss of trapped charge (fading) within hours following irradiation at RT that seriously limits their utility for dosimetry over an extended timescale. The fading rates of OSL and TL signals of 0402 resistors were analysed under various storage conditions (time and temperature), complemented by a study of their microstructure. The results support a model of athermal loss of trapped charge due to electron tunnelling from trapping states; this contrasting behaviour is attributed to a physical modification of the trap environment arising from the manufacturing process.

  7. Silicon photonic waveguide metrology using Mach-Zehnder interferometers.

    Science.gov (United States)

    Oton, C J; Manganelli, C; Bontempi, F; Fournier, M; Fowler, D; Kopp, C

    2016-03-21

    We propose a procedure for characterizing fabrication deviations within a chip and among different chips in a wafer in silicon photonics technology. In particular, independent measurements of SOI thickness and waveguide width deviations can be mapped through the wafer, allowing a precise and non-destructive characterization of how these variations are distributed along the surface of the wafer. These deviations are critical for most wavelength-dependent integrated devices, like microring resonators, filters, etc. We also show that the technique allows for the characterization of proximity effects. PMID:27136819

  8. Ultra-low power generation of twin photons in a compact silicon ring resonator

    CERN Document Server

    Azzini, Stefano; Strain, Michael J; Sorel, Marc; Helt, L G; Sipe, J E; Liscidini, Marco; Galli, Matteo; Bajoni, Daniele

    2012-01-01

    We demonstrate efficient generation of correlated photon pairs by spontaneous four wave mixing in a 5 \\mu m radius silicon ring resonator in the telecom band around 1550 nm. By optically pumping our device with a 200 \\mu W continuous wave laser, we obtain a pair generation rate of 0.2 MHz and demonstrate photon time correlations with a coincidence-to-accidental ratio as high as 250. The results are in good agreement with theoretical predictions and show the potential of silicon micro-ring resonators as room temperature sources for integrated quantum optics applications.

  9. Quantum dot SOA/silicon external cavity multi-wavelength laser.

    Science.gov (United States)

    Zhang, Yi; Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr-Jones, Thomas; Hochberg, Michael

    2015-02-23

    We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission. PMID:25836504

  10. Freestanding membrane composed of micro-ring array with ultrahigh sidewall aspect ratio for application in lightweight cathode arrays

    International Nuclear Information System (INIS)

    Graphical abstract: A freestanding multilayer ultrathin nano-membrane (FUN-membrane) with a micro-ring array (MRA), in which the dimension of each micro-ring is 3 μm in diameter, 2 μm in height and sub-100 nm in sidewall thickness is successfully fabricated, as shown in the SEM image of figure (a). Due to the MRA with ultrahigh aspect ratio of dielectric-metal sidewall, the FUN-membrane can be transferred to either rigid or flexible substrate to be used as the cathode for lightweight display panel, as shown in the schematic of figure (b). - Highlights: • Exploring a new fabrication method for the freestanding ultrathin nano-membrane (FUN-membrane). • FUN-membrane is composed of micro-ring array with ultrahigh aspect ratio of the insulator-metal sidewall. • The sharp metal edge of each micro-ring is preferred to be served as the micro-emitter. - Abstract: A freestanding multilayer ultrathin nano-membrane (FUN-membrane) with a micro-ring array (MRA) is successfully fabricated through the controllable film deposition. Each micro-ring of FUN-membrane is 3 μm in diameter, 2 μm in height and sub-100 nm in sidewall thickness, demonstrating an ultrahigh sidewall aspect ratio of 20:1. In our strategy, a silica layer (200 nm in thickness), a chromium transition layer (5 nm-thick) and a gold layer (40 nm-thick), were in sequence deposited on patterned photoresist. After removal of the photoresist by lift-off process, a FUN-membrane with MRA was peeled off from the substrate, where the gold layer acted as a protecting layer to prevent the MRA from fracture. The FUN-membrane was then transferred to a flexible polycarbonate (PC) sheet coated with indium tin oxide (ITO) layer, which was then used as a flexible and lightweight cathode. Remarkably, the field emission effect of the fabricated FUN-membrane cathode performs a high field-enhancement factor of 1.2 × 104 and a low turn-on voltage of 2 V/μm, indicating the advantages of the sharp metal edge of MRA. Due to the

  11. Freestanding membrane composed of micro-ring array with ultrahigh sidewall aspect ratio for application in lightweight cathode arrays

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lanlan [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Liu, Hongzhong, E-mail: hzliu@mail.xjtu.edu.cn [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Jiang, Weitao, E-mail: wtjiang@mail.xjtu.edu.cn [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Gao, Wei [Key Laboratory of Mechanics on Western Disasters and Environment, Lanzhou University, Lanzhou 730000 (China); Chen, Bangdao [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Li, Xin [Department of Microelectronics, Xi’an Jiaotong University, Xi’an 710049 (China); Ding, Yucheng [State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); An, Ningli [Department of Packaging Engineering, Xi’an University of Technology, Xi’an 710048 (China)

    2014-12-15

    Graphical abstract: A freestanding multilayer ultrathin nano-membrane (FUN-membrane) with a micro-ring array (MRA), in which the dimension of each micro-ring is 3 μm in diameter, 2 μm in height and sub-100 nm in sidewall thickness is successfully fabricated, as shown in the SEM image of figure (a). Due to the MRA with ultrahigh aspect ratio of dielectric-metal sidewall, the FUN-membrane can be transferred to either rigid or flexible substrate to be used as the cathode for lightweight display panel, as shown in the schematic of figure (b). - Highlights: • Exploring a new fabrication method for the freestanding ultrathin nano-membrane (FUN-membrane). • FUN-membrane is composed of micro-ring array with ultrahigh aspect ratio of the insulator-metal sidewall. • The sharp metal edge of each micro-ring is preferred to be served as the micro-emitter. - Abstract: A freestanding multilayer ultrathin nano-membrane (FUN-membrane) with a micro-ring array (MRA) is successfully fabricated through the controllable film deposition. Each micro-ring of FUN-membrane is 3 μm in diameter, 2 μm in height and sub-100 nm in sidewall thickness, demonstrating an ultrahigh sidewall aspect ratio of 20:1. In our strategy, a silica layer (200 nm in thickness), a chromium transition layer (5 nm-thick) and a gold layer (40 nm-thick), were in sequence deposited on patterned photoresist. After removal of the photoresist by lift-off process, a FUN-membrane with MRA was peeled off from the substrate, where the gold layer acted as a protecting layer to prevent the MRA from fracture. The FUN-membrane was then transferred to a flexible polycarbonate (PC) sheet coated with indium tin oxide (ITO) layer, which was then used as a flexible and lightweight cathode. Remarkably, the field emission effect of the fabricated FUN-membrane cathode performs a high field-enhancement factor of 1.2 × 10{sup 4} and a low turn-on voltage of 2 V/μm, indicating the advantages of the sharp metal edge of MRA. Due

  12. A study on refractive index sensors based on optical micro-ring resonators

    CERN Document Server

    Tsigaridas, Georgios N

    2015-01-01

    In this work the behavior of optical micro-ring resonators, especially when functioning as refractive index sensors, is studied in detail. Two configurations are considered, namely a linear waveguide coupled to a circular one and two linear waveguides coupled to each other through a circular one. The optimum coupling conditions are derived and it is shown that in both cases the condition for the resonant wavelength, i.e. the wavelength at which the transmission spectrum exhibits a dip (peak), is the same and depends only on the geometrical characteristics of the circular waveguide and the effective refractive index of the propagating mode. The latter, as well as the corresponding mode profile, can be easily calculated through numerical analysis. The sensitivity of the sensor is defined based on the dependence of the effective refractive index on the refractive index of the environment. Using a result of waveguide perturbation theory, the geometrical characteristics of the core of the circular waveguide that m...

  13. Microring-resonator-based four-port optical router for photonic networks-on-chip.

    Science.gov (United States)

    Ji, Ruiqiang; Yang, Lin; Zhang, Lei; Tian, Yonghui; Ding, Jianfeng; Chen, Hongtao; Lu, Yangyang; Zhou, Ping; Zhu, Weiwei

    2011-09-26

    We design and fabricate a four-port optical router, which is composed of eight microring-resonator-based switching elements, four optical waveguides and six waveguide crossings. The extinction ratio is about 13 dB for the through port and larger than 30 dB for the drop port. The crosstalk of the measured optical links is less than -13 dB. The average tuning power consumption is about 10.37 mW and the tuning efficiency is 5.398 mW/nm. The routing functionality and optical signal integrity are verified by transmitting a 12.5 Gb/s PRBS optical signal. PMID:21996836

  14. Annihilation behaviour under electron irradiation of athermal ω-phase crystals formed by cooling at 131K in a β-Ti-Mo alloy

    International Nuclear Information System (INIS)

    Formation of athermal ω-phase crystals due to cooling to 131 K has been directly observed in a β-type Ti-15mass%Mo alloy. The athermal ω-phase crystals easily disappear by electron irradiation during the in-situ observation at 131 K. Incubation phenomenon of the annihilation is also recognized. The annihilation behaviour was investigated based on the dependence on electron irradiation conditions and incubation phenomena. It is concluded that the annihilation mechanism is concerned with interactive effects of temperature rise due to electron irradiation and collective oscillation resulted from inelastic scattering of electron beam.

  15. An optic fiber sensor for multiple gases based on fiber loop ring-down spectroscopy and microring resonator arrays

    Science.gov (United States)

    Zhang, Xin; Jian, Jia-wen; Zheng, Yan-gong; Jin, Han; Zou, Jie

    2016-07-01

    A high-sensitivity sensor for multiple gases based on microring array filter and fiber loop ring-down spectroscopy system is proposed and demonstrated. The parameters of the resonators are designed so that the filtered signal from a broadband light source can be tuned with an absorption spectral line of gas. Therefore, through adding microring resonators horizontally and vertically, the number of target gases and filter range are increased. In this research, in the broad spectral range of about 0.9 μm, only the absorption spectral lines of target gases are filtered. The simulation results show that three target gases, CH4, CO2 and HF, can be simultaneously detected by the sensing system. Owing to the fiber loop ring-down spectroscopy, the whole system is optimized in mini-size and sensitivity, and we can choose different sensing methods to enhance the measurement accuracy for high and low concentration conditions.

  16. Tuning of resonance spacing over whole free spectral range based on Autler-Townes splitting in a single microring resonator.

    Science.gov (United States)

    Gao, Ge; Li, Danping; Zhang, Yong; Yuan, Shuai; Armghan, Ammar; Huang, Qingzhong; Wang, Yi; Yu, Jinzhong; Xia, Jinsong

    2015-10-19

    In this paper, a single microring resonator structure formed by incorporating a reflectivity-tunable loop mirror is demonstrated for the tuning of resonance spacing. Autler-Townes splitting in the resonator is utilized to tune the spacing between two adjacent resonances by controlling the strength of coupling between the two counter-propagating degenerate modes in the microring resonator. A theoretical model based on the transfer matrix method is built to analyze the device. The theoretical analysis indicates that the resonance spacing can be tuned from zero to one free spectral range (FSR). In experiment, by integrating metallic microheater, the tuning of resonance spacing in the range of the whole FSR (1.17 nm) is achieved within 9.82 mW heating power dissipation. The device has potential for applications in reconfigurable optical filtering and microwave photonics. PMID:26480351

  17. Broadband tunable microwave photonic phase shifter with low RF power variation in a high-Q AlN microring.

    Science.gov (United States)

    Liu, Xianwen; Sun, Changzheng; Xiong, Bing; Wang, Jian; Wang, Lai; Han, Yanjun; Hao, Zhibiao; Li, Hongtao; Luo, Yi; Yan, Jianchang; Wei, Tong Bo; Zhang, Yun; Wang, Junxi

    2016-08-01

    An all-optically tunable microwave photonic phase shifter is demonstrated based on an epitaxial aluminum nitride (AlN) microring with an intrinsic quality factor of 3.2×106. The microring adopts a pedestal structure, which allows overcoupling with 700 nm gap size and facilitates the fabrication process. A phase shift for broadband signals from 4 to 25 GHz is demonstrated by employing the thermo-optic effect and the separate carrier tuning technique. A phase tuning range of 0°-332° is recorded with a 3 dB radio frequency (RF) power variation and 48 mW optical power consumption. In addition, AlN exhibits intrinsic second-order optical nonlinearity. Thus, our work presents a novel platform with a low propagation loss and the capability of electro-optic modulation for applications in integrated microwave photonics. PMID:27472628

  18. In-resonator variation of waveguide cross-sections for dispersion control of aluminum nitride micro-rings

    CERN Document Server

    Jung, Hojoong; Tang, Hong X

    2015-01-01

    We propose and demonstrate a dispersion control technique by combination of different waveguide cross sections in an aluminum nitride micro-ring resonator. Narrow and wide waveguides with normal and anomalous dispersion, respectively, are linked with tapering waveguides and enclosed in a ring resonator to produce a total dispersion near zero. The mode-coupling in multimoded waveguides is also effectively suppressed. This technique provides new degrees of freedom and enhanced flexibility in engineering the dispersion of microcomb resonators.

  19. Stimulated and spontaneous four-wave mixing in silicon-on-insulator coupled photonic wire nano-cavities

    Science.gov (United States)

    Azzini, Stefano; Grassani, Davide; Galli, Matteo; Gerace, Dario; Patrini, Maddalena; Liscidini, Marco; Velha, Philippe; Bajoni, Daniele

    2013-07-01

    We report on four-wave mixing in coupled photonic crystal nano-cavities on a silicon-on-insulator platform. Three photonic wire cavities are side-coupled to obtain three modes equally separated in energy. The structure is designed to be self-filtering, and we show that the pump is rejected by almost two orders of magnitude. We study both the stimulated and the spontaneous four-wave mixing processes: owing to the small modal volume, we find that signal and idler photons are generated with a hundred-fold increase in efficiency as compared to silicon micro-ring resonators.

  20. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  1. Athermal distributed Brillouin sensors utilizing all-glass optical fibers fabricated from rare earth garnets: LuAG

    Science.gov (United States)

    Dragic, P. D.; Pamato, M. G.; Iordache, V.; Bass, J. D.; Kucera, C. J.; Jones, M.; Hawkins, T. W.; Ballato, J.

    2016-01-01

    An all-glass optical fiber derived from single-crystal LuAG is investigated for its potential use in athermal Brillouin distributed strain sensors. Such sensor systems are comprised of fiber whose Brillouin frequency shift is independent of temperature, but not independent of strain. Bulk Brillouin spectroscopy measurements on the precursor LuAG crystal are performed to gain insight into the crystal-to-glass transition. Results suggest that both the mass density and acoustic velocity are reduced relative to the crystal phase, in common with the other rare earth aluminosilicates. Advantages of the LuAG derived fiber over other rare earth garnet-derived fibers for the sensing application are a stronger strain response and larger Brilloun gain with narrower Brillouin spectral width.

  2. Error-free DWDM transmission and crosstalk analysis for a silicon photonics transmitter.

    Science.gov (United States)

    Seyedi, M Ashkan; Chen, Chin-Hui; Fiorentino, Marco; Beausoleil, Ray

    2015-12-28

    Individual channels of a five-channel microring silicon photonics transmitter are used for bit error ratio analysis and demonstrate error-free transmission at 10Gb/s. Two channels of the same transmitter are concurrently modulated using an 80GHz channel spacing comb laser and demonstrate open eye diagrams at 10Gb/s and 12.5Gb/s. Finally, concurrent modulation with tunable lasers is done to quantify optical power penalty for link bit error ratio versus channel spacing from +100GHz to -100GHz. When using a comb laser for concurrent modulation, no direct power penalty is observed for an 80GHz channel separation. PMID:26831964

  3. 基于微环谐振器的超紧凑微波光子滤波器的设计%Design of ultra-compact microwave photonic filter based on SOI microring resonators

    Institute of Scientific and Technical Information of China (English)

    王巍; 张爱华; 杨铿; 杨丽君; 冯世娟; 王振

    2013-01-01

    设计了一个基于硅基微环的超紧凑的微波光子滤波器,用以提高硅基微波光子器件的集成密度及增大其自由光谱范围。根据波导光学的耦合模理论,推导出双环并联谐振器的光强传递函数,并通过仿真得到了微波光子滤波器的输出特性。结果表明:当微环半径为0.79μm时,谐振器中直波导宽度为0.3μm,环形波导宽度为0.25μm,滤波器的自由光谱范围为140 nm,插入损耗为0.5 dB,半峰全宽为7 nm,此滤波器的性能完全满足粗波分复用系统的要求。%The ultra-compact microwave photonic filter based on silicon-on-insulator microring resonator was designed to increase the integration density of microwave photonic devices and enlarge the free spectral range. According to the coupled mode theory of waveguide optics, the optical intensity transfer function of the microring resonator with parallel-coupled structure was deduced and the transmission spectrums were simulated numerically. The results show that when the radius of resonator of resonator is 0.79μm, the straight waveguide width is 0.3μm and the ring waveguide width is 0.25μm, the filter with full wave at half maximum (FWHM) of 7 nm can be achieved, which also has an exceeding free spectral rang 140 nmof and an insertion loss less of 0.5 dB. The performance of this filter can meet the requirements of coarse wavelength division multiplexing system.

  4. Unfolding a design rule for microparticle buffering and dropping in microring-resonator-based add-drop devices.

    Science.gov (United States)

    Wang, Jiawei; Poon, Andrew W

    2014-04-21

    We propose an intuitive and quantitative design rule to determine the microparticle transport processes, including buffering and dropping, on microring-resonator-based add-drop devices at cavity resonances in an integrated optofluidic chip. The design rule uses the splitting ratio, S, of the optical-field intensity at the microring feedback-arc just after the output-coupling region to that at the drop-waveguide as a figure-of-merit for particle transport to determine between particle buffering (S > 1) and dropping (S substrate, and show that the particle transport behaviours of 2.2 μm- and 0.8 μm-sized polystyrene particles are consistent with the S values extracted from the transmission spectra. Our numerical simulations of the four devices suggest that the S values extracted from the simulated transmission spectra are consistent with those extracted from the simulated mode-field intensity distributions. We calculate the optical force field using Maxwell stress tensor and an effective microdisk model to relate the S values to the particle transport processes. We further experimentally demonstrate the viability of the design rule by switching between deterministic particle buffering and probabilistic particle transport processes by switching the polarization modes. PMID:24567040

  5. Silicone metalization

    Science.gov (United States)

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  6. Silicone metalization

    Science.gov (United States)

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  7. Comments on the interpretation of differential scanning calorimetry results for thermoelastic martensitic transformations: Athermal versus thermally activated kinetics

    International Nuclear Information System (INIS)

    In a previous article Van Humbeeck and Planes have made a number of criticisms of the authors' recent paper concerning the interpretation of the results obtained by Differential Scanning Calorimetry (DSC) from the Martensitic Transformation of Cu-Al-Ni-Mn-B alloys. Although the martensitic transformation of these shape memory alloys is generally classified as athermal, it has been confirmed that the capacity of the alloys to undergo a more complete thermoelastic transformation (i.e. better reversibility of the transformation) increased with the Mn content. This behavior has been explained by interpreting the DSC results obtained during thermal cycling in terms of a thermally activated mechanism controlling the direct and reverse transformations. When the heating rate increases during the reverse transformation the DSC curves shift towards higher temperatures while they shift towards the lower temperatures when the cooling rate was increased during the direct transformation. Since the starting transformation temperatures (As, Ms) do not shift, Van Humbeeck and Planes state that there is no real peak shift and assume that the DCS experiments were carried out without taking into account the thermal lag effect between sample and cell. On the following line they deduce a time constant, τ, of 60 seconds because the peak maximum shifts. In fact the assumption made by Van Humbeeck and Planes is false

  8. Analysis of silicon-on-insulator slot waveguide ring resonators targeting high Q-factors.

    Science.gov (United States)

    Zhang, Weiwei; Serna, Samuel; Le Roux, Xavier; Alonso-Ramos, Carlos; Vivien, Laurent; Cassan, Eric

    2015-12-01

    Vertical slot waveguide micro-ring resonators in silicon photonics have already been demonstrated in previous works and applied to several schemes, including sensing and hybrid nonlinear optics. Their performances, first quantified by the reachable Q-factors, are still perceived to be restrained by larger intrinsic propagation losses than those suffered by simple Si wire waveguides. In this Letter, the optical loss mechanisms of slot waveguide micro-ring resonators are thoroughly investigated with a special focus on the coupler loss contribution that turns out to be the key obstacle to achieving high Q-factors. By engineering the coupler design, slotted ring resonators with a 50 μm radius are experienced with a loaded Q-factor up to 10 times improvement from Q=3,000 to Q=30,600. The intrinsic losses due to the light propagation in the bent slot ring itself are proved to be as low as 1.32±0.87  dB/cm at λ=1,550  nm. These investigations of slot ring resonators open high performance potentials for on-chip nonlinear optical processing or sensing in hybrid silicon photonics. PMID:26625052

  9. A micrometer-scale integrated silicon source of time-energy entangled photons

    CERN Document Server

    Grassani, Davide; Liscidini, Marco; Galli, Matteo; Strain, Michael J; Sorel, Marc; Sipe, J E; Bajoni, Daniele

    2014-01-01

    Entanglement is a fundamental resource in quantum information processing. Several studies have explored the integration of sources of entangled states on a silicon chip but the sources demonstrated so far require millimeter lengths and pump powers of the order of hundreds of mWs to produce an appreciable photon flux, hindering their scalability and dense integration. Microring resonators have been shown to be efficient sources of photon pairs, but entangled state emission has never been demonstrated. Here we report the first demonstration of a microring resonator capable of emitting time-energy entangled photons. We use a Franson experiment to show a violation of Bell's inequality by as much as 11 standard deviations. The source is integrated on a silicon chip, operates at sub-mW pump power, emits in the telecom band with a pair generation rate exceeding 10$^7$ Hz per $nm$, and outputs into a photonic waveguide. These are all essential features of an entangled states emitter for a quantum photonic networks.

  10. Integrated micro-plasmas in silicon operating in helium

    CERN Document Server

    Dussart, Remi; Lefaucheux, P; Dufour, Thierry; Kulsreshath, M; Mandra, Monali; Tillocher, Thomas; Aubry, O; Dozias, S; Ranson, P; Goeckner, M

    2016-01-01

    Microplasma arrays operating in helium in a DC regime have been produced in silicon microre-actors. Cathode boundary layer (CBL) type microdevices were elaborated using clean room facilities and semiconductor processing techniques. Ignition of the micro-discharge arrays having either 50 or 100 m diameter cavities was studied. Two different structures (isotropically etched or anisotropically etched cavity) and various conditions (the two different voltage polarities, pressures etc.) were investigated. 100 microdis-charges of 50 m diameter could be ignited in parallel at 1000 torr. At high current, some parasitic and transient sparks appeared at the edge of the sample. When the polarization was reversed (cathode side corresponding the opened electrode), more current was needed to light all the microdischarges. A thermally affected zone around the hole on the anode side was obtained after operation.

  11. Green, red and IR frequency comb line generation from single IR pump in AlN microring resonator

    CERN Document Server

    Jung, Hojoong; Guo, Xiang; Fischer, Debra; Tang, Hong X

    2014-01-01

    On-chip frequency comb generations enable compact broadband sources for spectroscopic sensing and precision spectroscopy. Recent microcomb studies focus on infrared spectral regime and have difficulty in accessing visible regime. Here, we demonstrate comb-like visible frequency line generation through second, third harmonic, and sum frequency conversion of a Kerr comb within a high Q aluminum nitride microring resonator pumped by a single telecom laser. The strong power enhancement, in conjunction with the unique combination of Pockels and Kerr optical nonlinearity of aluminum nitride, leads to cascaded frequency conversions in the visible spectrum. High-resolution spectroscopic study of the visible frequency lines indicates matched free spectrum range over all the bands. This frequency doubling and tripling effect in a single microcomb structure offers great potential for comb spectroscopy and self-referencing comb.

  12. On the Influence of Athermal ω and α Phase Instabilities on the Scale of Precipitation of the α Phase in Metastable β-Ti Alloys

    Science.gov (United States)

    Zheng, Yufeng; Sosa, John M.; Fraser, Hamish L.

    2016-05-01

    In the presentation and manuscript in the International Conference on Solid-Solid Phase Transformations in Inorganic Materials (PTM 2015 conference), the authors presented the preliminary results showing that the nano-scale compositional and structural instabilities in the parent β phase in titanium alloys have significant influence on the subsequent phase transformations, such as α phase precipitation, by a combination of advanced electron microscopy and phase field simulation. The aim of the current research described in this paper has been to develop an understanding of the role of two instabilities in metastable β Ti alloys which may influence the scale of refined distributions of the α phase. The first of these involves the role of athermal ω phase on the nucleation of the α phase, and the second is the stability of the α phase itself during up-quenching experiments performed as a part of heat-treatment schedules that lead to refined distributions of this phase. The first investigation has involved heat treatments designed to ensure that the athermal ω phase is present at a temperature at which α nucleation is known, from previous research, to occur. It was found that the scale of α precipitation produced was "refined", rather than "super-refined". Hence, it is concluded that athermal ω plays no role in the nucleation of the α phase. The second investigation involves up-quenching of samples already containing an incipient "super-refined" distribution of the α phase to determine the stability of these distributions against such up-quenching. It has been found that the stability of the α phase is dependent on the composition, C 0( T), i.e., the alloy composition where, for a given temperature, T, the free energies of the α and β phases are equal.

  13. Sensing platform based on micro-ring resonator and on-chip reference sensors in SOI

    NARCIS (Netherlands)

    Chakkalakkal Abdulla, S.M.C.; Boer, B.M. de; Pozo Torres, J.M.; Berg, J.H. van den; Abutan, A.E.; Hagen, R.A.J.; Lo Cascio, D.M.R.; Harmsma, P.J.

    2014-01-01

    This article presents work on a Silicon-On-Insulator (SOI) compact sensing platform based on Micro Ring Resonators (MRRs). In order to enable correction for variations in environmental conditions (temperature, mechanical stress etc), a study has been performed on the performance of uncoated sensing

  14. A highly scalable fully non-blocking silicon photonic switch fabric

    CERN Document Server

    Nikolova, Dessislava; Liu, Yang; Rumley, Sebastien; Novack, Ari; Baehr-Jones, Tom; Hochberg, Michael; Bergman, Keren

    2016-01-01

    Large port count spatial optical switches will facilitate flexible and energy efficient data movement in future data communications systems, especially if they are capable of nanosecond-order reconfiguration times. In this work, we demonstrate an 8x8 microring-based silicon photonic switch with software controlled switching. The proposed switch architecture is modular as it assembles multiple identical components with multiplexing/demultiplexing functionalities. The switch is fully non-blocking, has path independent insertion loss, low crosstalk and is straightforward to control. A scalability analysis shows that this architecture can scale to very large port counts. This work represents the first demonstration of real-time firmware controlled switching with silicon photonics devices integrated at the chip scale.

  15. Hybrid laser integration for silicon photonics platform

    Science.gov (United States)

    Yang, Shuyu

    Silicon photonics has attracted extensive attention in both academia and industry in recent years, as an enabling technology to address the exponentially increasing demands for communication bandwidth. It brings state-of-the-art complementary metal-oxide-semiconductor (CMOS) processing technology to the field of photonic integration. The high yield and uniformity of silicon devices make it possible to build complex photonic systems-on-chip in large production volumes. Cutting-edge device performance has been demonstrated on this platform, including high-speed modulators, photodetectors, and passive devices such as the Y-junction, waveguide crossing, and arrayed waveguide gratings. As the device library quickly matures, an integrated laser source for a transmitter remains missing from the design kit. I demonstrated hybrid external cavity lasers by integrating reflective optical semiconductor amplifiers and silicon photonics chips. The gain chip and silicon chip can be designed and optimized independently, which is a significant advantage compared to bonding an III-V film on top of the silicon chip. Advanced optoelectronics packaging processes can be leveraged for chip alignment. Tunable C-Band (near 1550 nm) lasers with 10 mW on-chip power and less than 220 kHz bandwidth are demonstrated. O-Band lasers (operating near 1310 nm) as well as successful data transmission at 10 Gb/s and 40 Gb/s using the hybrid laser as the light source are also demonstrated. I designed a single cavity, multi wavelength laser by utilizing a quantum dot SOA, Sagnac loop and micro-ring based silicon photonics half cavity. Four lasing peaks with less than 3 dB power non-uniformity were measured, as well as 4 x 10 Gb/s error free data transmission. In addition to my main focus on RSOA/Silicon external cavity lasers, I propose and demonstrate a novel germanium-assisted grating coupler with low loss on-and-off chip fiber coupling. A coupling efficiency of 76% at 1.55 microm and 40 nm 1 d

  16. Silicon detectors

    International Nuclear Information System (INIS)

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  17. Silicon Photonic Devices and Their Applications

    Science.gov (United States)

    Li, Ying

    Silicon photonics is the study and application of photonic systems, which use silicon as an optical medium. Data is transferred in the systems by optical rays. This technology is seen as the substitutions of electric computer chips in the future and the means to keep tack on the Moore's law. Cavity optomechanics is a rising field of silicon photonics. It focuses on the interaction between light and mechanical objects. Although it is currently at its early stage of growth, this field has attracted rising attention. Here, we present highly sensitive optical detection of acceleration using an optomechanical accelerometer. The core part of this accelerometer is a slot-type photonic crystal cavity with strong optomechanical interactions. We first discuss theoretically the optomechanical coupling in the air-slot mode-gap photonic crystal cavity. The dispersive coupling gom is numerically calculated. Dynamical parametric oscillations for both cooling and amplification, in the resolved and unresolved sideband limit, are examined numerically, along with the displacement spectral density and cooling rates for the various operating parameters. Experimental results also demonstrated that the cavity has a large optomechanical coupling rate. The optically induced spring effect, damping and amplification of the mechanical modes are observed with measurements both in air and in vacuum. Then, we propose and demonstrate our optomechanical accelerometer. It can operate with a resolution of 730 ng/Hz1/2 (or equivalently 40.1 aN/Hz1/2) and with a transduction bandwidth of ≈ 85 kHz. We also demonstrate an integrated photonics device, an on-chip spectroscopy, in the last part of this thesis. This new type of on-chip microspectrometer is based on the Vernier effect of two cascaded micro-ring cavities. It can measure optical spectrum with a bandwidth of 74nm and a resolution of 0.22 nm in a small footprint of 1.5 mm2.

  18. Silicon photonic device for wavelength sensing and monitoring

    Science.gov (United States)

    Vargas Lopez, German R.

    Over the last decade advances and innovations from Silicon Photonics technology were observed in the telecommunications and computing industries. This technology which employs Silicon as an optical medium, relies on current CMOS micro-electronics fabrication processes to enable medium scale integration of many nano-photonic devices to produce photonic integrated circuitry. However, other fields of research such as optical sensor processing can benefit from silicon photonics technology, specially in sensors where the physical measurement is wavelength encoded. In this research work, we present a design and application of a thermally tuned silicon photonic device as an optical sensor interrogator. The main device is a micro-ring resonator filter of 10 mum of diameter. A photonic design toolkit was developed based on open source software from the research community. With those tools it was possible to estimate the resonance and spectral characteristics of the filter. From the obtained design parameters, a 7.8 x 3.8 mm optical chip was fabricated using standard micro-photonics techniques. In order to tune a ring resonance, Nichrome micro-heaters were fabricated on top of the device. Some fabricated devices were systematically characterized and their tuning response were determined. From measurements, a ring resonator with a free-spectral-range of 18.4 nm and with a bandwidth of 0.14 nm was obtained. Using just 5 mA it was possible to tune the device resonance up to 3 nm. In order to apply our device as a sensor interrogator in this research, a model of wavelength estimation using time interval between peaks measurement technique was developed and simulations were carried out to assess its performance. To test the technique, an experiment using a Fiber Bragg grating optical sensor was set, and estimations of the wavelength shift of this sensor due to axial strains yield an error within 22 pm compared to measurements from spectrum analyzer. Results from this study

  19. Athermal laser launch telescopes

    OpenAIRE

    Kamphues, F.G.; Henselmans, R.; Rijnveld, N.; Lemmen, M.H.J.; Doelman, N.J.; Nijkerk, M.D.

    2011-01-01

    ESO has developed a concept for a compact laser guide star unit for use in future Adaptive Optics (AO) systems. A small powerful laser is combined with a telescope that launches the beam, creating a single modular unit that can be mounted directly on a large telescope. This approach solves several of the stability problems experienced with a number of first generation laser guide star systems around the world. Four of these compact laser guide stars will be used for the new VLT 4LGSF Adaptive...

  20. Athermal laser launch telescopes

    NARCIS (Netherlands)

    Kamphues, F.G.; Henselmans, R.; Rijnveld, N.; Lemmen, M.H.J.; Doelman, N.J.; Nijkerk, M.D.

    2011-01-01

    ESO has developed a concept for a compact laser guide star unit for use in future Adaptive Optics (AO) systems. A small powerful laser is combined with a telescope that launches the beam, creating a single modular unit that can be mounted directly on a large telescope. This approach solves several o

  1. On-chip multi spectral frequency standard replication by stabilizing a microring resonator to a molecular line

    Science.gov (United States)

    Zektzer, Roy; Stern, Liron; Mazurski, Noa; Levy, Uriel

    2016-07-01

    Stabilized laser lines are highly desired for myriad of applications ranging from precise measurements to optical communications. While stabilization can be obtained by using molecular or atomic absorption references, these are limited to specific frequencies. On the other hand, resonators can be used as wide band frequency references. Unfortunately, such resonators are unstable and inaccurate. Here, we propose and experimentally demonstrate a chip-scale multispectral frequency standard replication operating in the spectral range of the near IR. This is obtained by frequency locking a microring resonator (MRR) to an acetylene absorption line. The MRR consists of a Si3N4 waveguides with microheater on top of it. The thermo-optic effect is utilized to lock one of the MRR resonances to an acetylene line. This locked MRR is then used to stabilize other laser sources at 980 nm and 1550 nm wavelength. By beating the stabilized laser to another stabilized laser, we obtained frequency instability floor of 4 ×10-9 at around 100 s in terms of Allan deviation. Such stable and accurate chip scale sources are expected to serve as important building block in diverse fields such as communication and metrology.

  2. Modelado y simulación orientada al análisis de una micro-red eléctrica con generación fotovoltaica

    OpenAIRE

    Ruiz Allende, Felipe

    2010-01-01

    El objetivo principal de este proyecto se centra en el estudio de armónicos en un micro-red, con generación fotovoltaica en un entorno residencial sub-urbano. En particular este estudio pretende: Predecir y evidenciar los efectos de los amónicos en los sistemas de generación distribuida con generación fotovoltaica. Estudiar el efecto de los lazos de control de los inversores fotovoltaicos. Estudiar los efectos de la distorsión armónica producto del control de los inversores....

  3. Desarrollo de un sistema SCADA basado en Labview para la gestión de una microrred energética

    OpenAIRE

    Muñoz Santos, María

    2011-01-01

    Este proyecto se enmarca dentro de un proyecto mayor basado en el desarrollo de una microrred eléctrica en el departamento de Ingeniería Eléctrica y Electrónica de la UPNA. Ese proyecto tiene como finalidad diseñar microrredes eléctricas en las que se implementen estrategias de control para lograr la optimización de sus elementos añadiéndoles nuevas funcionalidades, garantizando el suministro eléctrico de las cargas en funcionamiento aislado, atenuando las perturbaciones introd...

  4. Étude d’un système hybride pile à combustible / microturbine dans un contexte microréseau rural isolé

    OpenAIRE

    Baudoin, Sylvain

    2015-01-01

    Les milieux ruraux, souvent distants du réseau électrique principal, sont particulièrement adaptés au déploiement de microréseaux (MR). Ce type de réseau permet une restructuration du réseau électrique d’aujourd’hui afin d'intégrer plus efficacement un plus grand nombre des sources d’énergie renouvelable. Le biogaz,obtenu par la méthanisation des déchets agricoles, est une ressource d’énergie renouvelable disponible dans les zones rurales. Cette ressource, facilement stockable en grande quant...

  5. Design and Fabrication of Polarization-Independent Micro-Ring Resonators

    Institute of Scientific and Technical Information of China (English)

    GENG Min-Ming; JIA Lian-Xi; ZHANG Lei; LIU Yu-Liang; YANG Lin; LI Fang

    2008-01-01

    @@ Origin of polarization sensitivity of photonic wire waveguides (PWWs) is analysed and the effective refractive indices of two different polarization states are calculated by the three-dimensional fall-vector beam propagation method. We find that PWWs are polarization insensitive if the distribution of its refractive index is uniform and the cross section is square. An MRR based on such a polarization-insensitive PWW is fabricated on an S-inch silicon-on-insulator wafer using 248-nm deep ultraviolet lithography and reactive ion etching. The quasi-TE mode is resonant at 1542.25nm and 1558.90nm, and the quasi-TM mode is resonant at 1542.12nm and 1558.94 nm.The corresponding polarization shift is 0.13 nm at the shorter wavelength and 0.04 nm at the longer wavelength.Thus the fabricated device is polarization independent. The extinction ratio is larger than lOdB. The 3dB bandwidth is about 2.5nm and the Qvalue is about 620 at 1558.90nm.

  6. Tunable Squeezing Using Coupled Ring Resonators on a Silicon Nitride Chip

    CERN Document Server

    Dutt, Avik; Luke, Kevin; Cardenas, Jaime; Gaeta, Alexander L; Nussenzveig, Paulo; Lipson, Michal

    2016-01-01

    We demonstrate continuous tuning of the squeezing level generated in a double-ring optical parametric oscillator by externally controlling the coupling condition using electrically controlled integrated microheaters. We accomplish this by utilizing the avoided crossing exhibited by a pair of coupled silicon nitride microring resonators. We directly detect a change in the squeezing level from 0.5 dB in the undercoupled regime to 2 dB in the overcoupled regime, which corresponds to a change in the generated on-chip squeezing factor from 0.9 dB to 3.9 dB. Such wide tunability in the squeezing level can be harnessed for on-chip quantum enhanced sensing protocols which require an optimal degree of squeezing.

  7. Intermixing of InP-based quantum dots and application to micro-ring resonator wavelength-selective filter for photonic integrated devices

    Science.gov (United States)

    Matsumoto, Atsushi; Matsushita, Asuka; Takei, Yuki; Akahane, Kouichi; Matsushima, Yuichi; Ishikawa, Hiroshi; Utaka, Katsuyuki

    2014-09-01

    In this study, we investigated quantum dot intermixing (QDI) for InAs/InGaAlAs highly stacked QDs on an InP(311)B substrate with low-temperature annealing at 650 °C in order to realize integrated photonic devices with QDs and passive waveguides. In particular, we adopted the method of introducing point defects by ICP-RIE to realize a blue shift of the PL peak wavelength by about 150 nm. Moreover, we successfully fabricated double micro-ring resonators by QDI. The output power contrasts of the devices were found to be 9.0 and 8.6 dB for TE and TM modes, respectively.

  8. Programación y reprogramación energética de una micro-red aislada en una estrategia de control por horizonte deslizante

    OpenAIRE

    Marietta Sciara, Pablo Martín

    2014-01-01

    Premi al millor Projecte de Fi de Carrera presentat durant l'any 2014 en l'àmbit d'Optimització de Recursos que atorga DOW CHEMICAL IBÉRICA En este proyecto se propone el diseño y construcción de un software para el control energético de una micro-red eléctrica que opera de forma aislada de la red de distribución principal. El software propuesto se integra físicamente a un Sistema Centralizado de Gestión de la Energía (SCGE) desde el cual se administra la generación y la demanda energética...

  9. Silicon Nano-Photonic Devices

    DEFF Research Database (Denmark)

    Pu, Minhao

    This thesis deals with the design, fabrication and characterization of nano-photonic devices including ridge waveguide components, microring resonators, and photonic crystal components, and explore the potential for these devices in dierent applications ranging from optical communication to...... achieved with small power variation. A widely tunable microwave notch lter is also experimentally demonstrated at 40 GHz. Other application such as pulse repetition rate multiplication by using microring resonator is also presented. Photonic crystal components are studied. Two dierent types of photonic...... crystal structures are analyzed concerning index sensitivity, dispersion engineering, and slow-light coupling. Several photonic crystal devices such as index sensor, slow-light coupler, and all-optical tunable cavity are presented....

  10. Optically Active Organic Microrings

    DEFF Research Database (Denmark)

    Balzer, Frank; Beermann, J.; Bozhevolnyi, S.I.;

    2003-01-01

    -hexaphenyl molecules are generated on mica surfaces, possessing narrow size distributions with mean diameters of a few micrometers, wall widths of 100 to 200 nm, and wall heights of several hundred nanometers. Polarized linear and nonlinear optics reveals that the rings are made up of radially o...

  11. High-Sensitivity Temperature-Independent Silicon Photonic Microfluidic Biosensors

    Science.gov (United States)

    Kim, Kangbaek

    Optical biosensors that can precisely quantify the presence of specific molecular species in real time without the need for labeling have seen increased use in the drug discovery industry and molecular biology in general. Of the many possible optical biosensors, the TM mode Si biosensor is shown to be very attractive in the sensing application because of large field amplitude on the surface and cost effective CMOS VLSI fabrication. Noise is the most fundamental factor that limits the performance of sensors in development of high-sensitivity biosensors, and noise reduction techniques require precise studies and analysis. One such example stems from thermal fluctuations. Generally SOI biosensors are vulnerable to ambient temperature fluctuations because of large thermo-optic coefficient of silicon (˜2x10 -4 RIU/K), typically requiring another reference ring and readout sequence to compensate temperature induced noise. To address this problem, we designed sensors with a novel TM-mode shallow-ridge waveguide that provides both large surface amplitude for bulk and surface sensing. With proper design, this also provides large optical confinement in the aqueous cladding that renders the device athermal using the negative thermo-optic coefficient of water (~ --1x10-4RIU/K), demonstrating cancellation of thermo-optic effects for aqueous solution operation near 300K. Additional limitations resulting from mechanical actuator fluctuations, stability of tunable lasers, and large 1/f noise of lasers and sensor electronics can limit biosensor performance. Here we also present a simple harmonic feedback readout technique that obviates the need for spectrometers and tunable lasers. This feedback technique reduces the impact of 1/f noise to enable high-sensitivity, and a DSP lock-in with 256 kHz sampling rate can provide down to micros time scale monitoring for fast transitions in biomolecular concentration with potential for small volume and low cost. In this dissertation, a novel

  12. Label-free photonic biosensors fabricated with low-loss hydrogenated amorphous silicon resonators

    Science.gov (United States)

    Lipka, Timo; Wahn, Lennart; Trieu, Hoc Khiem; Hilterhaus, Lutz; Müller, Jörg

    2013-01-01

    The precise detection of chemicals and biomolecules is of great interest in the areas of biotechnology and medical diagnostics. Thus, there is a need for highly sensitive, small area, and low-cost sensors. We fabricated and optically characterized hydrogenated amorphous silicon photonic resonators for label-free lab-on-chip biosensors. The sensing was performed with small-footprint microdisk and microring resonators that detect a refractive-index change via the evanescent electric field. Homogeneous sensing with NaCl and surface-sensing experiments with immobilized bovine serum albumin (BSA) were carried out. A sensitivity as high as 460 nm/RIU was measured for NaCl dissolved in deionized water for the disk, whereas about 50 nm/RIU was determined for the ring resonator. The intrinsic limits of detection were calculated to be 3.3×10 and 3.2×10 at 1550-nm wavelength. We measured the binding of BSA to functionalized ring resonators and found that molecular masses can be detected down to the clinically relevant femtogram regime. The detection and quantification of related analytes with hydrogenated amorphous silicon photonic sensors can be used in medical healthcare diagnostics like point-of-care-testing and biotechnological screening.

  13. Silicone chain extender

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a silicone chain extender, more particularly a chain extender for silicone polymers and copolymers, to a chain extended silicone polymer or copolymer and to a functionalized chain extended silicone polymer or copolymer, to a method for the preparation thereof and...

  14. Enhanced light-vapor interactions and all optical switching in a chip scale micro-ring resonator coupled with atomic vapor

    CERN Document Server

    Stern, Liron; Mazurski, Noa; Levy, Uriel

    2016-01-01

    The coupling of atomic and photonic resonances serves as an important tool for enhancing light-matter interactions and enables the observation of multitude of fascinating and fundamental phenomena. Here, by exploiting the platform of atomic-cladding wave guides, we experimentally demonstrate the resonant coupling of rubidium vapor and an atomic cladding micro ring resonator. Specifically, we observed cavity-atom coupling in the form of Fano resonances having a distinct dependency on the relative frequency detuning between the photonic and the atomic resonances. Moreover, we were able to significantly enhance the efficiency of all optical switching in the V-type pump-probe scheme. The coupled system of micro-ring resonator and atomic vapor is a promising building block for a variety of light vapor experiments, as it offers a very small footprint, high degree of integration and extremely strong confinement of light and vapor. As such it may be used for important applications, such as all optical switching, disp...

  15. Silicon Micromachining

    Science.gov (United States)

    Elwenspoek, Miko; Jansen, Henri V.

    2004-08-01

    This comprehensive book provides an overview of the key techniques used in the fabrication of micron-scale structures in silicon. Recent advances in these techniques have made it possible to create a new generation of microsystem devices, such as microsensors, accelerometers, micropumps, and miniature robots. The authors underpin the discussion of each technique with a brief review of the fundamental physical and chemical principles involved. They pay particular attention to methods such as isotropic and anisotropic wet chemical etching, wafer bonding, reactive ion etching, and surface micromachining. There is a special section on bulk micromachining, and the authors also discuss release mechanisms for movable microstructures. The book is a blend of detailed experimental and theoretical material, and will be of great interest to graduate students and researchers in electrical engineering and materials science whose work involves the study of micro-electromechanical systems (MEMS).

  16. Thin silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M. [Astro Power Inc., Solar Park, Newark, DE (United States)

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  17. Simulation and Optimization of Polymer Electro-Optic Double Series-Coupled Microrings Resonator Switches%聚合物串联耦合双环电光开关的优化

    Institute of Scientific and Technical Information of China (English)

    闫欣; 马春生; 郑传涛; 王现银; 张大明

    2009-01-01

    In terms of the coupled mode theory,microring resonance theory and electro-optic modulation theory,a reasonable project is proposed for designing a polymer electro-optic switch based on the double series-coupled microrings.The simulation and optimization are performed under the resonant wavelength of 1.55 μm,the results are as follows:the core size of the microring is 1.6×1.6 μm2,confined layer between the core and the electrode is 1.6 μm,thickness of the electrode is 0.15 μm,radius of the microring is 15.2 μm,coupling gap between the micoring and the channel is 0.14 μm,that between the micoring and the microring is 0.6 μm,3 dB bandwidth is 0.06 μm,switching voltage is 6 V,insertion loss is 2.2 dB,and crosstalk is -20 dB.The output spectrum is flatter and steeper than that of the single microring.These results show that the designed device exhibits favorable switching functions.%利用耦合模理论、电光调制理论和微环谐振理论,提出一个聚合物串联耦合双环电光开关器件模型,在1.55 μm谐振波长下对该器件进行了模拟和优化.结果为:微环波导芯截面尺寸为1.6×1.6 μm2,波导芯与电极间的限制层厚度为1.6 μm,电极厚度为0.15 μm,微环半径为15.2 μm,微环与信道间的耦合间距为0.14 μm,微环与微环间的耦合间距为0.6 μm,输出光谱的3 dB带宽约为0.06 nm,开关电压约为6 V左右,插入损耗约为2.2 dB,串扰约为-20 dB.所设计的双环电光开关较单环型电光开关不仅输出光谱更加平坦陡峭,非谐振光更弱,而且开关电压更低.

  18. The effects of swift heavy-ion irradiation on helium-ion-implanted silicon

    International Nuclear Information System (INIS)

    Highlights: •We investigate the effects of swift heavy-ion irradiation on He bubbles. •Growth in size and decrease of number density upon Ar-ion irradiation were found. •The mean size of extended defects increases upon Ar-ion irradiation. •Strong electronic excitation during Ar-ion irradiation produces athermal annealing at room temperature. -- Abstract: Cross-sectional transmission electron microscopy (XTEM) was used to study the effects of irradiation with swift heavy ions on helium-implanted silicon. 〈1 0 0〉-oriented silicon wafers were implanted with 30 keV helium to a dose of 3 × 1016 He+/cm2 at 600 K. Subsequently, the helium-implanted Si wafers were irradiated with 792 MeV argon ions. The He bubbles and extended defects in the wafers were examined via XTEM analysis. The results reveal that the mean diameter of the He bubbles increases upon Ar-ion irradiation, while the number density of the He bubbles decreases. The microstructure of the He bubbles observed after Ar-ion irradiation is comparable to that observed after annealing at 1073 K for 30 min. Similarly, the mean size of the extended defects, i.e., Frank loops, increases after Ar-ion irradiation. Possible mechanisms are discussed

  19. Aplicación con generación de energía fotovoltaica mediante módulo de potencia controlado por IGBTs para su integración en una microrred eléctrica

    OpenAIRE

    Calderón Domènech, Joel

    2013-01-01

    El objeto principal del proyecto es la integración energética de un sistema fotovoltaico en una microrred mediante un módulo Semikron, para lo cual se han de implementar el control del elevador según algoritmo MPPT y el control del puente en H del inversor monofásico. Para el control del sistema se ha utilizado el software LabVIEW. La estructura del sistema es una instalación fotovoltaica conectada a un convertidor elevador DC/DC, un banco de condensadores, un convertidor DC/AC...

  20. Silicon carbide bodies

    International Nuclear Information System (INIS)

    A self-bonded silicon carbide body produced by siliconising a preformed mixture of particles (shaped by means other than slip-casting) of carbon and silicon carbide in the beta form has a mean grain size in the range of 0.1 to 5 microns. Such a body may be produced using silicon carbide particles having a mean surface area in the range 0.5 to 20 square metres per gram. The silicon carbide particles may be produced by heating a mixture of silica and silicon to generate silicon monoxide vapour and passing the vapour through a bed of particulate carbon. (author)

  1. Black luminescent silicon

    Energy Technology Data Exchange (ETDEWEB)

    Pezoldt, Joerg [FG Nanotechnologie, Institut fuer Mikro- und Nanotechnologie, TU Ilmenau, Postfach 100565, 98684 Ilmenau (Germany); Kups, Thomas [FG Werkstoffe der Elektrotechnik, Institut fuer Mikro- und Nanotechnologien, TU Ilmenau, Postfach 1005765, 98684 Ilmenau (Germany); Stubenrauch, Mike [FG Mikromechanische Systeme, Institut fuer Mikro- und Nanotechnologien, TU Ilmenau, Postfach 1005765, 98684 Ilmenau (Germany); Fischer, Michael [FG Elektroniktechnologie, Institut fuer Mikro- und Nanotechnologien, TU Ilmenau, Postfach 1005765, 98684 Ilmenau (Germany)

    2011-03-15

    Black silicon is a fascinating multipurpose modification of bulk silicon which can be fabricated in a selforganized structure formation process during dry etching of bare silicon wafer leading to the formation of a high density of silicon needles. The smallest dimension of the tips approaches values between 1 and 2 nm. The silicon nanostructure exhibits an extremely low diffuse reflectivity. The nanosized tips and their coating with fluorine doped nonstoichiometric silicon dioxide are responsible for cathodoluminescence in the blue-green and red regions of the visible spectra (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Bonding silicones with epoxies

    Energy Technology Data Exchange (ETDEWEB)

    Tira, J.S.

    1980-01-01

    It is shown that silicones, both room temperature vulcanizing (RTV) and millable rubber (press cured) can be successfully bonded to other materials using plasma treatment and epoxy adhesives. The plasma treatment using dry air atmosphere increases the surface energy of the silicone and thus provides a lower water contact angle. This phenomenon allows the epoxy adhesive to wet the silicone surface and ultimately bond. Bond strengths are sufficiently high to result in failures in the silicone materials rather than the adhesive bond.

  3. Intraventricular Silicone Oil

    OpenAIRE

    Mathis, Stéphane; Boissonnot, Michèle; Tasu, Jean-Pierre; Simonet, Charles; Ciron, Jonathan; Neau, Jean-Philippe

    2016-01-01

    Abstract Intracranial silicone oil is a rare complication of intraocular endotamponade with silicone oil. We describe a case of intraventricular silicone oil fortuitously observed 38 months after an intraocular tamponade for a complicated retinal detachment in an 82 year-old woman admitted in the Department of Neurology for a stroke. We confirm the migration of silicone oil along the optic nerve. We discuss this rare entity with a review of the few other cases reported in the medical literatu...

  4. Silicon: electrochemistry and luminescence

    OpenAIRE

    Kooij, Ernst Stefan

    2001-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible luminescence from porous silicon is investigated. Both under cathodic and anodic polarization emission can be observed in the presence of oxidizing and reducing agents, respectively. Also in indifferent electrol...

  5. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  6. Silicon nanostructures for photonics

    International Nuclear Information System (INIS)

    Nanostructuring silicon is an effective way to turn silicon into a photonic material. In fact, low-dimensional silicon shows light amplification characteristics, non-linear optical effects, photon confinement in both one and two dimensions, photon trapping with evidence of light localization, and gas-sensing properties. (author)

  7. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    2001-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible luminescenc

  8. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xingyu, E-mail: xzhang@utexas.edu, E-mail: swapnajit.chakravarty@omegaoptics.com, E-mail: chenrt@austin.utexas.edu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai [Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758 (United States); Chakravarty, Swapnajit, E-mail: xzhang@utexas.edu, E-mail: swapnajit.chakravarty@omegaoptics.com, E-mail: chenrt@austin.utexas.edu [Omega Optics, Inc., Austin, Texas 78757 (United States); Chen, Ray T., E-mail: xzhang@utexas.edu, E-mail: swapnajit.chakravarty@omegaoptics.com, E-mail: chenrt@austin.utexas.edu [Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758 (United States); Omega Optics, Inc., Austin, Texas 78757 (United States)

    2015-11-30

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB.

  9. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    International Nuclear Information System (INIS)

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB

  10. 60-nm-thick basic photonic components and Bragg gratings on the silicon-on-insulator platform.

    Science.gov (United States)

    Zou, Zhi; Zhou, Linjie; Li, Xinwan; Chen, Jianping

    2015-08-10

    We demonstrate integrated basic photonic components and Bragg gratings using 60-nm-thick silicon-on-insulator strip waveguides. The ultra-thin waveguides exhibit a propagation loss of 0.61 dB/cm and a bending loss of approximately 0.015 dB/180° with a 30 μm bending radius (including two straight-bend waveguide junctions). Basic structures based on the ultra-thin waveguides, including micro-ring resonators, 1 × 2 MMI couplers, and Mach-Zehnder interferometers are realized. Upon thinning-down, the waveguide effective refractive index is reduced, making the fabrication of Bragg gratings possible using the standard 248-nm deep ultra-violet (DUV) photolithography process. The Bragg grating exhibits a stopband width of 1 nm and an extinction ratio of 35 dB, which is practically applicable as an optical filter or a delay line. The transmission spectrum can be thermally tuned via an integrated resistive micro-heater formed by a heavily doped silicon slab beside the waveguide. PMID:26367931

  11. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    CERN Document Server

    Zhang, Xingyu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chen, Ray T

    2016-01-01

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 um-long coupled L0-type photonic crystalmicrocavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystalmicrocavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystalmicrocavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 us, and a fall time of 18.5 us. The measured on-chip loss on the transmission band is as l...

  12. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  13. Chemical Analysis Methods for Silicon Carbide

    Institute of Scientific and Technical Information of China (English)

    Shen Keyin

    2006-01-01

    @@ 1 General and Scope This Standard specifies the determination method of silicon dioxide, free silicon, free carbon, total carbon, silicon carbide, ferric sesquioxide in silicon carbide abrasive material.

  14. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Al-Jassim, M. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1995-08-01

    We have studied a novel extrinsic gettering method that utilizes the very large surface areas, produced by porous silicon etch on both front and back surfaces of the silicon wafer, as gettering sites. In this method, a simple and low-cost chemical etching is used to generate the porous silicon layers. Then, a high-flux solar furnace (HFSF) is used to provide high-temperature annealing and the required injection of silicon interstitials. The gettering sites, along with the gettered impurities, can be easily removed at the end the process. The porous silicon removal process consists of oxidizing the porous silicon near the end the gettering process followed by sample immersion in HF acid. Each porous silicon gettering process removes up to about 10 {mu}m of wafer thickness. This gettering process can be repeated so that the desired purity level is obtained.

  15. A compact, integrated silicon device for the generation of spectrally-filtered, pair-correlated photons

    CERN Document Server

    Minkov, Momchil

    2016-01-01

    The third-order non-linearity of silicon gives rise to a spontaneous four-wave mixing process in which correlated photon pairs are generated. Sources based on this effect can be used for quantum computation and cryptography, and can in principle be integrated with standard CMOS fabrication technology and components. However, one of the major challenges is the on-chip demultiplexing of the photons, and in particular the filtering of the pump power, which is many orders of magnitude larger than that of the signal and idler photons. Here, we propose a photonic crystal coupled-cavity system designed so that the coupling of the pump mode to the output channel is strictly zero due to symmetry. We further analyze this effect in presence of fabrication disorder and find that, even then, a pump suppression of close to 40 dB can be achieved in state-of-the art systems. Due to the small mode volumes and high quality factors, our system is also expected to have a generation efficiency much higher than in standard micro-r...

  16. A compact, integrated silicon device for the generation of spectrally filtered, pair-correlated photons

    Science.gov (United States)

    Minkov, Momchil; Savona, Vincenzo

    2016-05-01

    The third-order nonlinearity of silicon gives rise to a spontaneous four-wave mixing process in which correlated photon pairs are generated. Sources based on this effect can be used for quantum computation and cryptography, and can in principle be integrated with standard CMOS fabrication technology and components. However, one of the major challenges is the on-chip demultiplexing of the photons, and in particular the filtering of the pump power, which is many orders of magnitude larger than that of the signal and idler photons. Here, we propose a photonic crystal coupled-cavity system designed so that the coupling of the pump mode to the output channel is strictly zero due to symmetry. We further analyze this effect in the presence of fabrication disorder and find that, even then, a pump suppression of close to 40 dB can be achieved in state-of-the-art systems. Due to the small mode volumes and high quality factors, our system is also expected to have a generation efficiency much higher than in standard micro-ring systems. Those two considerations make a strong case for the integration of our proposed design in future on-chip quantum technologies.

  17. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible blo

  18. Highly porous silicon membranes fabricated from silicon nitride/silicon stacks.

    Science.gov (United States)

    Qi, Chengzhu; Striemer, Christopher C; Gaborski, Thomas R; McGrath, James L; Fauchet, Philippe M

    2014-07-23

    Nanopore formation in silicon films has previously been demonstrated using rapid thermal crystallization of ultrathin (15 nm) amorphous Si films sandwiched between nm-thick SiO2 layers. In this work, the silicon dioxide barrier layers are replaced with silicon nitride, resulting in nanoporous silicon films with unprecedented pore density and novel morphology. Four different thin film stack systems including silicon nitride/silicon/silicon nitride (NSN), silicon dioxide/silicon/silicon nitride (OSN), silicon nitride/silicon/silicon dioxide (NSO), and silicon dioxide/silicon/silicon dioxide (OSO) are tested under different annealing temperatures. Generally the pore size, pore density, and porosity positively correlate with the annealing temperature for all four systems. The NSN system yields substantially higher porosity and pore density than the OSO system, with the OSN and NSO stack characteristics fallings between these extremes. The higher porosity of the Si membrane in the NSN stack is primarily due to the pore formation enhancement in the Si film. It is hypothesized that this could result from the interfacial energy difference between the silicon/silicon nitride and silicon/silicon dioxide, which influences the Si crystallization process. PMID:24623562

  19. Novel Silicon Nanotubes

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Novel silicon nanotubes with inner-diameter of 60-80 nm was prepared using hydrogen-added dechlorination of SiCl4 followed by chemical vapor deposition (CVD) on a NixMgyO catalyst. The TEM observation showed that the suitable reaction temperature is 973 K for the formation of silicon nanotubes. Most of silicon nanotubes have one open end and some have two closed ends. The shape ofnanoscale silicon, however, is a micro-crystal type at 873 K, a rod or needle type at 993 K and an onion-type at 1023 K, respectively.

  20. Silicon nano-biotechnology

    CERN Document Server

    He, Yao

    2014-01-01

    This book reviews the latest advances in the development of silicon nano-biotechnology for biological and biomedical applications, which include biosensing, bioimaging, and cancer therapy. In this book, newly developed silicon nano-biotechnology and its biomedical applications are systematically introduced. For instance, fluorescent silicon nanoparticles, serving as novel high-performance biological nanoprobes, are superbly suited to real-time and long-term bioimaging. Silicon nanowire-based sensing platform is especially capable of sensitive, specific, and multiplexed detection of various bio

  1. Study on Mach-Zehnder type all optical logic gate based on microring resonator%基于 Mach-Zehnder结构微环谐振腔全光逻辑门的研究

    Institute of Scientific and Technical Information of China (English)

    高磊; 王涛

    2014-01-01

    In order to solve the problem of high pump power of logic gates , a novel Mach-Zehnder type all optical logic gate based on micro-ring resonator was proposed .The periodical patterns of air holes added in the micro-ring waveguide provide strong confinement on light , which enhances the third order nonlinear Kerr effect around the band edge and decreases the pump power of phase shift .Combining micro-ring resonator with Mach-Zehnder structure , different logic function can be realized with the phase shift in the different micro-rings controlled by Kerr effect .The impact of the different size of air holes on the structure was calculated and the detailed control methods of the logic gates were verified . The feasibility was proved .The simulation results show that this device possesses several practical advantages , such as low power consumption of less than 10dBm, delay of ps order, high speed data processing ability and μm order dimension.The device achieves the different kinds of logic gates and has the guiding significance to all optical networks .%为了解决全光逻辑门结构所需抽运能量过大的问题,提出了一种基于Mach-Zehnder结构微环谐振腔的全光控制逻辑门结构。通过在微环波导上加入空气孔加强对光的限制,增强了带边附近的3阶非线性效应,从而减小达到所需相移的抽运能量。将微环谐振腔与Mach-Zehnder结构结合,采用光学Kerr效应控制不同微环内相移的改变,从而实现不同逻辑门功能。同时进行了理论分析与仿真验证,计算了不同尺寸空气孔对于结构的影响,并对于不同逻辑功能的控制方法,验证了结构的可行性。结果表明,这种逻辑门结构所需抽运能量不超过10dBm,延迟处于皮秒量级,速度快,器件的尺寸处于微米量级,该结构可以同时实现不同的逻辑门状态,对于全光网络的研究有指导意义。

  2. Producing silicon continuously

    Science.gov (United States)

    Ingle, W. M.; Rosler, R. S.; Thompson, S.

    1981-01-01

    Fluid-bed vaporization followed by chemical vapor deposition generates large, semiconductor-grade silicon particles. Method is economical, high-volume alternative to conventional batch-processing methods. Harvested chunks, extracted in cyclone separator, are about 0.5 to 1.3 centimeters in diameter. Process is not limited to polymer feedstock; it utilizes any halosilane intermediate used in silicon production.

  3. Silicon Valley Ecosystem

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ It is unlikely that any industrial region of the world has received as much scrutiny and study as Silicon Valley. Despite the recent crash of Internet and telecommunications stocks,Silicon Valley remains the world's engine of growth for numerous high-technology sectors.

  4. Cervical silicone lymphadenopathy.

    Science.gov (United States)

    Gilbert, Latoni Kaysha; Thiruchelvam, Janavikulam

    2016-07-01

    A patient presented to the department of oral and maxillofacial surgery with a rare case of cervical silicone lymphadenopathy. She had a painless ovoid mass in the left side of her neck and had had cosmetic breast augmentation 10 years before. Radiological imaging and core biopsy examination were consistent with silicone lymphadenopathy. PMID:26830068

  5. Silicon chips light up

    International Nuclear Information System (INIS)

    Researchers have demonstrated a continuous laser in silicon, which paves the way for computing at the speed of light Silicon is the racehorse of microelectronics. For the last 40 years, the number of transistors that can be crammed onto a single silicon wafer has doubled every 18 months or so, with the latest 'Itanium' chip packing in almost half a billion of them. But Moore's law, as this exponential trend is popularly known, is coming to an end due to fundamental physical limitations. These include the difficulty of keeping the chips cool and the fact that length scales are quickly approaching those of a single atom. A silicon laser could help chip makers beat these limitations by harnessing light, thus reducing the size and cost of microelectronic circuits even further,while at the same time increasing their speed. The problem is that silicon is a very inefficient light emitter, which means that silicon-based optoelectronics has remained out of reach. Since 2000 all this has changed and the race to build a silicon laser has begun in earnest. Now, Mario Paniccia and colleagues at Intel in the US and Israel have demonstrated the first continuous all-silicon laser by harnessing a phenomenon called Raman scattering (Nature 433 292 and 725). (U.K.)

  6. ALICE silicon strip module

    CERN Multimedia

    Maximilien Brice

    2006-01-01

    This small silicon detector strip will be inserted into the inner tracking system (ITS) on the ALICE detector at CERN. This detector relies on state-of-the-art particle tracking techniques. These double-sided silicon strip modules have been designed to be as lightweight and delicate as possible as the ITS will eventually contain five square metres of these devices.

  7. Photoluminescence of Silicon Nanocrystals in Silicon Oxide

    Directory of Open Access Journals (Sweden)

    L. Pavesi

    2007-12-01

    Full Text Available Recent results on the photoluminescence properties of silicon nanocrystals embedded in silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals produced by high-temperature annealing of silicon rich oxide layers deposited by plasma-enhanced chemical vapor deposition. The influence of deposition parameters and layer thickness is analyzed in detail. The nanocrystal size can be roughly controlled by means of Si content and annealing temperature and time. Unfortunately, a technique for independently fine tuning the emission efficiency and the size is still lacking; thus, only middle size nanocrystals have high emission efficiency. Interestingly, the layer thickness affects the nucleation and growth kinetics so changing the luminescence efficiency.

  8. Steps towards silicon optoelectronics

    CERN Document Server

    Starovoytov, A

    1999-01-01

    nanostructure fabrication. Thus, this thesis makes a dual contribution to the chosen field: it summarises the present knowledge on the possibility of utilising optical properties of nanocrystalline silicon in silicon-based electronics, and it reports new results within the framework of the subject. The main conclusion is that due to its promising optoelectronic properties nanocrystalline silicon remains a prospective competitor for the cheapest and fastest microelectronics of the next century. This thesis addresses the issue of a potential future microelectronics technology, namely the possibility of utilising the optical properties of nanocrystalline silicon for optoelectronic circuits. The subject is subdivided into three chapters. Chapter 1 is an introduction. It formulates the oncoming problem for microelectronic development, explains the basics of Integrated Optoelectronics, introduces porous silicon as a new light-emitting material and gives a brief review of other competing light-emitting material syst...

  9. Silicone-containing composition

    Science.gov (United States)

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  10. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  11. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to ""fill in the blanks"" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the curre

  12. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  13. Measurements of the ballistic-phonon component resulting from nuclear and electron recoils in crystalline silicon

    International Nuclear Information System (INIS)

    We present measurements of the ballistic-phonon component resulting from nuclear and electron recoils in silicon at ∼380 mK. The detectors used for these experiments consist of a 300-μm-thick monocrystal of silicon instrumented with superconducting titanium transition-edge sensors. These sensors detect the initial wavefront of athermal phonons and give a pulse height that is sensitive to changes in surface-energy density resulting from the focusing of ballistic phonons. Nuclear recoils were generated by neutron bombardment of the detector. A Van de Graaff proton accelerator and a thick 7Li target were used. Pulse-height spectra were compared for neutron, x-ray, and γ-ray events. A previous analysis of this data set found evidence for an increase in the ballistic-phonon component for nuclear recoils compared to electron recoils at a 95% confidence level. An improved understanding of the detector response has led to a change in the result. In the present analysis, the data are consistent with no increase at the 68% confidence level. This change stems from an increase in the uncertainty of the result rather than a significant change in the central value. The increase in ballistic phonon energy for nuclear recoils compared to electron recoils as a fraction of the total phonon energy (for equal total phonon energy events) was found to be 0.024+0.041-0.055 (68% confidence level). This result sets a limit of 11.6% (95% confidence level) on the ballistic phonon enhancement for nuclear recoils predicted by open-quote open-quote hot spot close-quote close-quote and electron-hole droplet models, which is the most stringent to date. To measure the ballistic-phonon component resulting from electron recoils, the pulse height as a function of event depth was compared to that of phonon simulations. (Abstract Truncated)

  14. Silicon applications in photonics

    Science.gov (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  15. Roadmap on silicon photonics

    Science.gov (United States)

    Thomson, David; Zilkie, Aaron; Bowers, John E.; Komljenovic, Tin; Reed, Graham T.; Vivien, Laurent; Marris-Morini, Delphine; Cassan, Eric; Virot, Léopold; Fédéli, Jean-Marc; Hartmann, Jean-Michel; Schmid, Jens H.; Xu, Dan-Xia; Boeuf, Frédéric; O’Brien, Peter; Mashanovich, Goran Z.; Nedeljkovic, M.

    2016-07-01

    Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with

  16. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  17. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  18. Silicon etch process

    International Nuclear Information System (INIS)

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  19. Characterization of Integrated Optical Strain Sensors Based on Silicon Waveguides

    NARCIS (Netherlands)

    Westerveld, W.J.; Leinders, S.M.; Muilwijk, P.M.; Pozo, J.

    2013-01-01

    Microscale strain gauges are widely used in micro electro-mechanical systems (MEMS) to measure strains such as those induced by force, acceleration, pressure or sound. We propose all-optical strain sensors based on micro-ring resonators to be integrated with MEMS. We characterized the strain-induced

  20. Silicone azide fireproof material

    Science.gov (United States)

    1978-01-01

    Finely powdered titanium oxide was added to silicone azide as the sintering agent to produce a nonflammable material. Mixing proportions, physical properties, and chemical composition of the fireproofing material are included.

  1. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  2. Study on Silicon detectors

    International Nuclear Information System (INIS)

    Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm2), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

  3. Nonlinear silicon photonics

    OpenAIRE

    Tsia, KK; Jalali, B.

    2010-01-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - f...

  4. Oxygen defect processes in silicon and silicon germanium

    International Nuclear Information System (INIS)

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies

  5. Silicon-Based Light Sources for Silicon Integrated Circuits

    Directory of Open Access Journals (Sweden)

    L. Pavesi

    2008-01-01

    Full Text Available Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

  6. Oxygen defect processes in silicon and silicon germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Sgourou, E. N.; Londos, C. A. [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece); Schwingenschlögl, U. [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  7. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  8. Nanoslits in silicon chips

    International Nuclear Information System (INIS)

    Potassium hydroxide (KOH) etching of a patterned oriented silicon wafer produces V-shaped etch pits. We demonstrate that the remaining thickness of silicon at the tip of the etch pit can be reduced to ∼5 μm using an appropriately sized etch mask and optical feedback. Starting from such an etched chip, we have developed two different routes for fabricating 100 nm scale slits that penetrate through the macroscopic silicon chip (the slits are ∼850 μm wide at one face of the chip and gradually narrow to ∼100-200 nm wide at the opposite face of the chip). In the first process, the etched chips are sonicated to break the thin silicon at the tip of the etch pit and then further KOH etched to form a narrow slit. In the second process, focused ion beam milling is used to etch through the thin silicon at the tip of the etch pit. The first method has the advantage that it uses only low-resolution technology while the second method offers more control over the length and width of the slit. Our slits can be used for preparing mechanically stable, transmission electron microscopy samples compatible with electrical transport measurements or as nanostencils for depositing nanowires seamlessly connected to their contact pads.

  9. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  10. Emissivity of microstructured silicon.

    Science.gov (United States)

    Maloney, Patrick G; Smith, Peter; King, Vernon; Billman, Curtis; Winkler, Mark; Mazur, Eric

    2010-03-01

    Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 microm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range. Hemispherical-total emissivity is calculated for the samples and found to be 0.84 before a measurement-induced annealing and 0.65 after the measurement for the sulfur-doped sample. Secondary samples lack a measurement-induced anneal, and reasons for this discrepancy are presented. Emissivity numbers are plotted and compared with a silicon substrate, and Aeroglaze Z306 black paint. Use of microstructured silicon as a blackbody or microbolometer surface is modeled and presented, respectively. PMID:20197803

  11. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    GiacomoIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  12. Silicon carbide thyristor

    Science.gov (United States)

    Edmond, John A. (Inventor); Palmour, John W. (Inventor)

    1996-01-01

    The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

  13. The LHCb Silicon Tracker

    CERN Document Server

    Bernhard, R P; Bauer, J; Blouw, J; Hofmann, W; Löchner, S; Maciuc, F; Schmelling, M; Smale, N; Schwingenheuer, B; Voss, H; Borysova, M; Ohrimenko, O; Pugatch, V; Yakovenko, V; Bay, A; Bettler, M O; Fauland, P; Frei, R; Nicolas, L; Knecht, M; Perrin, A; Schneider, O; Tran, M T; Van Hunen, J; Vervink, K; Adeva, B; Esperante-Pereira, D; Gallas, A; Fungueirino-Pazos, J L; Lois, C; Pazos-Alvarez, A; Pérez-Trigo, E; Pló-Casasus, M; Vázquez, P; Bernet, R; Gassner, J; Lehner, F; Sakhelashvili, T; Steiner, S; Steinkamp, O; Straumann, U; Van Tilburg, J; Vollhardt, A; Volyanskyy, D; Wenger, A

    2007-01-01

    The Silicon Tracker is a large-surface silicon micro-strip detector that covers the full acceptance of the experiment in a single tracking station upstream of the spectrometer magnet and the inner-most part of the three tracking stations downstream of the magnet. Special emphasis has been put on module quality assurance at all stages of the production. Various tests are performed after each production step and each module goes through several burn-in cycles. The design of the LHCb silicon detectors is described and the main lessons learnt from the R&D phase are summarized. Focus will be on the experience from module production and the quality assurance program.

  14. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  15. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick;

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  16. CMS silicon tracker developments

    International Nuclear Information System (INIS)

    The CMS Silicon tracker consists of 70 m2 of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors

  17. Strained Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Ralf B. Wehrspohn

    2012-05-01

    Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

  18. LHCb Silicon Tracker infrastructure

    CERN Document Server

    Ermoline, Yuri

    2004-01-01

    The LHCb Silicon Tracker is a vital part of the experiment. It consists of four planar stations: one trigger and three inner tracking stations. The operation of the Silicon Tracker detectors and electronics is provided by its infrastructure: cooling system, high- and low-voltage power supply systems, temperature and radiation monitoring systems. Several components of these systems are located in the experimental hall and subjected to radiation. This paper mainly concentrates on the recent development: requirements definition, evaluation of possible implementation scenarios, component choice and component radiation tests.

  19. The Silicon Cube detector

    International Nuclear Information System (INIS)

    A new experimental device, the Silicon Cube detector, consisting of six double-sided silicon strip detectors placed in a compact geometry was developed at CENBG. Having a very good angular coverage and high granularity, it allows simultaneous measurements of energy and angular distributions of charged particles emitted from unbound nuclear states. In addition, large-volume Germanium detectors can be placed close to the collection point of the radioactive species to be studied. The setup is ideally suited for isotope separation on-line (ISOL)-type experiments to study multi-particle emitters and was tested during an experiment at the low-energy beam line of SPIRAL at GANIL.

  20. Amorphous silicon thermometer

    International Nuclear Information System (INIS)

    The carbon glass resistance thermometers (CGRT) shows an unstable drift by heat cycles. Since we were looking for a more stable element of thermometer for cryogenic and high magnetic field environments, we selected amorphous silicon as a substitute for CGRT. The resistance of many amorphous samples were measured at 4K, at 77K, and 300K. We eventually found an amorphous silicon (Si-H) alloy whose the sensitivity below 77K was comparable to that of the germanium resistance thermometer with little magnetic field influence. (author)

  1. Elite silicon and solar power

    International Nuclear Information System (INIS)

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production

  2. Irradiation Defects in Silicon Crystal

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.

  3. [Biological function of some elements and their compounds. IV. Silicon, silicon acids, silicones].

    Science.gov (United States)

    Puzanowska-Tarasiewicz, Helena; Kuźmicka, Ludmiła; Tarasiewicz, Mirosław

    2009-11-01

    The review is devoted for the occurance, meaning of silicon and their compounds, especially silicon acids and silicones. Silicon participates in biosynthesis of collagen, the basic component of connective tissue. It strengthens and makes the walls of blood vessels more flexible, diminishes capillaries permeability, accelerates healing processes, has a sebostatic activity, strengthens hair and nails. This element has a beneficial effect on phosphorylation of proteins saccharides, and nucleotides. It is also essential for the formation of cytoskeleton and other cellular structures of mechanical or supportive function. Silicon is an initial substrate for obtaining silicones. These are synthetic polymers, in which silicon atoms are bound by oxygen bridges. They are used in almost all kinds of products due to their most convenient physical and chemical properties: moistening and film-forming, giving liquid form increasing solubility. Silicon acids form colloid gel, silica gel, with absorptive abilities, like active carbon. PMID:19999810

  4. Plasma Deposition of Amorphous Silicon

    Science.gov (United States)

    Calcote, H. F.

    1982-01-01

    Strongly adhering films of silicon are deposited directly on such materials as Pyrex and Vycor (or equivalent materials) and aluminum by a non-equilibrium plasma jet. Amorphous silicon films are formed by decomposition of silicon tetrachloride or trichlorosilane in the plasma. Plasma-jet technique can also be used to deposit an adherent silicon film on aluminum from silane and to dope such films with phosphorus. Ability to deposit silicon films on such readily available, inexpensive substrates could eventually lead to lower cost photovoltaic cells.

  5. Selective formation of porous silicon

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  6. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...

  7. Sintering silicon nitride

    Science.gov (United States)

    Bansal, Narottam P. (Inventor); Levine, Stanley R. (Inventor); Sanders, William A. (Inventor)

    1993-01-01

    Oxides having a composition of (Ba(1-x)Sr(x))O-Al2O3-2SiO2 are used as sintering aids for producing an improved silicon nitride ceramic material. The x must be greater than 0 to insure the formation of the stable monoclinic celsian glass phase.

  8. Silicon Valley's Turnaround

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ During Silicon Valley's dramatic economic growth fueled by the Internet boom and business investment in information technology, employment in the region's high-tech sec tor tripled between 1995 and 2000. The economic boom gave rise to many new firms,drawing em ployees into high-tech jobs from other regions and other industries.

  9. Fluorescent nanocrystalline silicon labels

    Czech Academy of Sciences Publication Activity Database

    Fučíková, A.; Valenta, Jan; Pelant, Ivan; Březina, Vítězslav; Kůsová, Kateřina

    Strasbourg: MRS , 2010. s. 8. [E- MRS 2010 Spring Meeting. 07.06.2010-11.06.2010, Strasbourg] R&D Projects: GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z60870520 Keywords : porous silicon * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism

  10. Silicon crystal under bending

    International Nuclear Information System (INIS)

    The mechanical behavior of a silicon crystal under bending is investigated. For a crystal of length 30 mm and thickness 3 mm, to achieve the specified bend angle of 0.64 mrad, the appropriate angle of the aluminum punches is 0.96 mrad

  11. Ultrasmall silicon quantum dots

    NARCIS (Netherlands)

    Zwanenburg, F.A.; Van Loon, A.A.; Steele, G.A.; Rijmenam, C.E.W.M.; Balder, T.; Fang, Y.; Lieber, C.M.; Kouwenhoven, L.P.

    2009-01-01

    We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and addition

  12. Silicon Valley Policy

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    @@ Silicon Valley is home to the most dynamic industries in the California economy. These industries--the high-tech sector--are driven by innovation, and each new wave of innovation is usually led by creative entrepreneurs starting new firms.

  13. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  14. Silicon graphene Bragg gratings

    OpenAIRE

    Capmany, Jose; Domenech, David; Munoz, Pascual

    2013-01-01

    We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

  15. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  16. Silicone/Acrylate Copolymers

    Science.gov (United States)

    Dennis, W. E.

    1982-01-01

    Two-step process forms silicone/acrylate copolymers. Resulting acrylate functional fluid is reacted with other ingredients to produce copolymer. Films of polymer were formed by simply pouring or spraying mixture and allowing solvent to evaporate. Films showed good weatherability. Durable, clear polymer films protect photovoltaic cells.

  17. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  18. Silicon Carbide Optics for Space Situational Awareness and Responsive Space Needs

    Science.gov (United States)

    Robichaud, J.; Green, J.; Catropa, D.; Rider, B.; Ullathorne, C.

    Over the past 10 years the application of Silicon Carbide (SiC) materials to space based imaging systems has expanded. The aerospace community has long recognized the technical, cost, and schedule benefits associated with the material, and adoption of the technology is facilitated as more successful flight systems are demonstrated. SiC provides a number of technical advantages, as a result of superior material properties. The material can also be manufactured using near-net-shape fabrication processes which provide significant cost and schedule advantages compared with competing material technologies. These technical and manufacturing advantages make SiC uniquely well suited to address the needs associated with Space Situational Awareness (SSA) and Responsive Space (RS) applications. The material has a low coefficient of thermal expansion, and a high thermal conductivity, allowing visible quality imaging in the presence of stressing, and changing, thermal loads. The material's specific stiffness is high, approximately 70% of Beryllium, allowing stiff, lightweight optical systems to be produced. Passively athermal systems have been produced, demonstrating the ability of the material to provide visible quality imaging, without the need for actively controlled focus adjust mechanisms. In addition, SiC structural elements do not outgas, and have no issues with moisture absorption, allowing rapid on-orbit data acquisition. From the manufacturing perspective the material offers dramatic schedule benefits, these come primarily from L-3 SSG's near-net-shape manufacturing process which allows complex, lightweighted optical and structural elements to be produced without the need for costly/time-consuming machining processes. These schedule advantages become more dramatic as the aperture of the system increases, and/or as the number of units increases. In this paper we provide an overview of the technical and manufacturing advantages associated with SiC, provide background

  19. 110 GHz hybrid mode-locked fiber laser with enhanced extinction ratio based on nonlinear silicon-on-insulator micro-ring-resonator (SOI MRR)

    Science.gov (United States)

    Liu, Yang; Hsu, Yung; Chow, Chi-Wai; Yang, Ling-Gang; Yeh, Chien-Hung; Lai, Yin-Chieh; Tsang, Hon-Ki

    2016-03-01

    We propose and experimentally demonstrate a new 110 GHz high-repetition-rate hybrid mode-locked fiber laser using a silicon-on-insulator microring-resonator (SOI MRR) acting as the optical nonlinear element and optical comb filter simultaneously. By incorporating a phase modulator (PM) that is electrically driven at a fraction of the harmonic frequency, an enhanced extinction ratio (ER) of the optical pulses can be produced. The ER of the optical pulse train increases from 3 dB to 10 dB. As the PM is only electrically driven by the signal at a fraction of the harmonic frequency, in this case 22 GHz (110 GHz/5 GHz), a low bandwidth PM and driving circuit can be used. The mode-locked pulse width and the 3 dB spectral bandwidth of the proposed mode-locked fiber laser are measured, showing that the optical pulses are nearly transform limited. Moreover, stability evaluation for an hour is performed, showing that the proposed laser can achieve stable mode-locking without the need for optical feedback or any other stabilization mechanism.

  20. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  1. Contact damage of silicon nitride whisker-silicon nitride composites

    International Nuclear Information System (INIS)

    The influence of β-silicon nitride whiskers content on Hertzian contact damage in silicon nitride matrix prepared by tape casting and gas pressure sintering (GPS) is discussed. Hertzian indentations with different loads were applied to follow the evolution of damage in these whisker-reinforced composites. The morphology of contact damage was investigated by using optical microscopy, as well as electron microscopy. With increasing β-silicon nitride whiskers content in α-silicon nitride, the porosity of materials increased and the micro structure of matrix became finer. With decreasing grain size, the subsurface contact damage increased by increasing crack length. The samples with 2 mass % β-silicon nitride addition had showed shallow ring crack and quasi-plastic deformation. On the other hand, for sample with 10 mass % β-silicon nitride whisker added sample and coarse microstructures subsurface deformation was not observed. Copyright (2002) AD-TECH - International Foundation for the Advancement of Technology Ltd

  2. Pulsed laser irradiation of silicon

    International Nuclear Information System (INIS)

    Pulsed laser irradiation of silicon was investigated with a ruby laser. Development of heat flow theory made it possible to calculate temperature profiles in silicon during pulsed laser irradiation. Silicon self-diffusion measurements, laser annealing of damage in As implanted silicon, and laser induced doping of single crystal silicon was investigated. A computer programme was writen based on the numerical solution, and was used to calculate the temperature profiles in silicon during irradiation. Radioactive 31Si was used to determine the self-diffusion of silicon in silicon during irradiation. Radioactivity profiles in the silicon sample were measured by anodic oxidation, sequential removal of the formed SiO2 by etching in dilute HF and measurement of the radioactivity left in the sample. Spreading of the radioactive silicon marker started to take place at energy densities above 0.8 Jcm-2, giving an average duffusion coefficient of (5.0 ± 2.7) x 10-8 m2s-1, which is of the order of magnitude expected when melting takes place. The doping of silicon with Sb, Bi and In by laser assisted diffusion was investegated from evaporated layers as well as solutions of these dopants. The threshold energies for doping was 0.6, 0.9 and 0.7 Jcm-2, while maximum dopant concentrations of 2 x 1021, 7 x 1020 and 4 x 1020 respectively was found for Sb, Bi and In. These values exceed the equilibrium solid solubility by orders of magnitude, and can be ascribed to trapping of the dopant atoms, due to the high recrystallization velocities involved. Doping was carried out by placing silicon substrates directly into solutions of SbCl3 and triphenyl antimony. The threshold of solution doping was found to be much greater than doping from evaporated layer. This difference could be ascribed to the much larger absorption coefficient of the laser light in the evaporated layers, as compared to single crystal silicon

  3. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  4. Porous Silicon for Light Management in Silicon Solar Cells

    OpenAIRE

    2011-01-01

    In the present work possibilities of utilizing porous silicon (PS) to enhance absorption in silicon solar cells are investigated. Silicon solar cells produce energy by converting the incoming solar radiation to electricity and the efficiency of this technology will naturally depend on the amount of light that can be absorbed by the solar cell. Antireflection coatings are used on the surface of solar cells to increase the fraction of light that enters the cell. In addition texture and rear sid...

  5. Structure, defects, and strain in silicon-silicon oxide interfaces

    OpenAIRE

    Kovačević, Goran; Pivac, Branko

    2014-01-01

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, f...

  6. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  7. The LHCb silicon tracker

    CERN Document Server

    Adeva, B; Bauer, C; Baumeister, D; Bay, A; Bernhard, R P; Bernet, R; Blouw, J; Carron, B; Ermoline, Y; Esperante-Pereira, D; Frei, R; Gassner, J; Hofmann, W; Jiménez-Otero, S; Knöpfle, K T; Köstner, S; Lehner, F; Löchner, S; Lois, C; Needham, M; Pugatch, V; Schmelling, M; Schwingenheuer, B; Siegler, M; Steinkamp, O; Straumann, U; Tran, M T; Vázquez, P; Vollhardt, A; Volyanskyy, D; Voss, H

    2005-01-01

    LHCb is a dedicated B-physics and CP-violation experiment for the Large Hadron Collider at CERN. Efficient track reconstruction and excellent trigger performances are essential in order to exploit fully its physics potential. Silicon strip detectors providing fast signal generation, high resolution and fine granularity are used for this purpose in the large area Trigger Tracker station in front of the spectrometer magnet and the LHCb Inner Tracker covering the area close to the beam pipe behind the magnet. Long read-out strips of up to 38cm are used together with fast signal shaping adapted to the 25ns LHC bunch crossing. The design of these tracking stations, the silicon sensor strip geometries and the latest test results are presented here.

  8. The CMS silicon tracker

    International Nuclear Information System (INIS)

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

  9. Germanium epitaxy on silicon

    Directory of Open Access Journals (Sweden)

    Hui Ye

    2014-03-01

    Full Text Available With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  10. Silicone breast implants: complications.

    Science.gov (United States)

    Iwuagwu, F C; Frame, J D

    1997-12-01

    Silicone breast implants have been used for augmentation mammoplasty for cosmetic purposes as well as for breast reconstruction following mastectomy for more than three decades. Though the use of the silicone gel filled variety has been banned in the USA except for special cases, they continue to be available elsewhere in the world including the UK. Despite the immense benefit they provide, their usage is associated with some complications. Most of these are related to the surgery and can be reduced by good surgical management. The major complications associated with their use is adverse capsular contracture, an outcome which can be very frustrating to manage. This article reviews the commonly reported complications and suggested management alternatives. PMID:9613406

  11. Germanium epitaxy on silicon

    International Nuclear Information System (INIS)

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics. (review)

  12. Porous silicon: silicon quantum dots for photonic applications

    International Nuclear Information System (INIS)

    Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

  13. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n+ - pSi) solar cell comparing to (n+ - p)Si solar cell without PS layer

  14. The CMS silicon tracker

    International Nuclear Information System (INIS)

    The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance. Because of the high radiation environment in which the detectors will operate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors. This includes studies on performance (charge collection, cluster size, resolution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature. (author)

  15. Silicon microstrip detectors

    International Nuclear Information System (INIS)

    The main scope of this laboratory is to give the students an introduction of some special characteristics of silicon microstrip detectors. The students will perform some exercises using different instruments to appreciate the properties of these detectors, especially its great position resolution. An overview of different instruments such as an oscilloscope, wave function generator as others will be also given as important devices in any experimental laboratory

  16. Silicon diode dosimetry

    International Nuclear Information System (INIS)

    The theory of silicon dosimetry is briefly reviewed with respect to operation of these diodes without reverse bias in the short-circuit current mode. The problems of temperature dependence, radiation damage, and the dependence on photon energy are discussed. Various applications of the diodes to practical radiation dosimetry are then described with a view toward pointing out the pitfalls as well as the advantages of using these diodes for dosimetry. (author)

  17. Silicon diode dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Dixon, R.L.; Ekstrand, K.E. (Wake Forest Univ., Winston-Salem, NC (USA). Bowman Gray School of Medicine)

    1982-11-01

    The theory of silicon dosimetry is briefly reviewed with respect to operation of these diodes without reverse bias in the short-circuit current mode. The problems of temperature dependence, radiation damage, and the dependence on photon energy are discussed. Various applications of the diodes to practical radiation dosimetry are then described with a view toward pointing out the pitfalls as well as the advantages of using these diodes for dosimetry.

  18. Silicon oxynitride based photonics

    OpenAIRE

    Wörhoff, K.; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material class and discuss several application examples. Preliminary results on novel processes, which will lead to largely reduced hydrogen incorporation and enable reflow of SiON material, are being pres...

  19. Green silicon photonics

    OpenAIRE

    Jalali, B.; Fathpour, S.; Tsia, K

    2009-01-01

    Silicon photonics have provided low-cost communication components for Internet applications and are now aimed towards providing environmentally friendly and green optical solutions. The need for energy-efficient photonics is due to the excessive energy dissipated in advanced electronics and an increase in power density that has posed a challenge to the most advanced chip-cooling technologies. The two-photon absorption (TPA)-generated free carriers need to be actively removed from the waveguid...

  20. Strained Silicon Photonics

    OpenAIRE

    Wehrspohn, Ralf B; Jörg Schilling; Christian Bohley; Clemens Schriever

    2012-01-01

    A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is inves...

  1. Integrated silicon microspectrometers

    OpenAIRE

    Kong, S. H.; Correia, J. H.; Bartek, M.; Wolffenbuttel, R.F.

    2001-01-01

    Microspectrometers, which read color and the results from analytical chemistry, are used for quality inspection in industry and agiculture. They read the chromatography results by measuring the infrared (IR) absorption of the chemical constituent between the IR source and the grating. Micromachining can implement the dispersion and detection elements in a silicon microspectrometer so that it can analyze the spectrum of incident light. The microspectrometer may either operate an array of de...

  2. Sintered silicon carbide

    International Nuclear Information System (INIS)

    A sintered silicon carbide body having a predominantly equiaxed microstructure consists of 91 to 99.85% by weight of silicon carbide at least 95% of which is the alpha phase, up to 5.0% by weight carbonized organic material, 0.15 to 3.0% of boron, and up to 1.0% by weight additional carbon. A mixture of 91 to 99.85 parts by weight silicon carbide having a surface area of 1 to 100 m2/g, 0.67 to 20 parts of a carbonizable organic binder with a carbon content of at least 33% by weight, 0.15 to 5 parts of a boron source containing 0.15 to 3.0 parts by weight boron and up to 15 parts by weight of a temporary binder is mixed with a solvent, the mixture is then dried, shaped to give a body with a density of at least 1.60 g/cc and fired at 1900 to 22500C to obtain an equiaxed microstructure. (author)

  3. Micromachined Silicon Cantilever Magnetometry.

    Science.gov (United States)

    Chaparala, M. V.

    1998-03-01

    Magnetic torque measurements give us a simple and attractive method for characterizing the anisotropic properties of magnetic materials. Silicon torque and force magnetometers have many advantages over traditional torsion fiber torque magnetometers. We have fabricated micromachined silicon torque and force magnetometers employing both capacitive(``Capacitance platform magnetometer for thin film and small crystal superconductor studies'', M. Chaparala et al.), AIP Conf. Proc. (USA), AIP Conference Proceedings, no.273, p. 407 1993. and strain dependent FET detection(``Strain Dependent Characterstics of Silicon MOSFETs and their Applications'', M. Chaparala et al.), ISDRS Conf. Proc. 1997. schemes which realize some of these gains. We will present the pros and cons of each of the different detection schemes and the associated design constraints. We have developed a feedback scheme which enables null detection thus preserving the integrity of the sample orientation. We will present a method of separating out the torque and force terms in the measured signals and will discuss the errors associated with each of the designs. Finally, we present the static magnetic torque measurements on various materials with these devices, including equilibrium properties on sub microgram specimens of superconductors, and dHvA measurements near H_c2. We will also discuss their usefulness in pulsed magnetic fields(``Cantilever magnetometry in pulsed magnetic fields", M. J. Naughton et al.), Rev. of Sci. Instrum., vol.68, p. 4061 1997..

  4. Scattering characteristics from porous silicon

    International Nuclear Information System (INIS)

    Porous silicon layers come into existence as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet. In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from porous silicon and the origin of its photoluminescence are reviewed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include: different methods of porous silicon sample preparation; their photoluminescence, reflecting and scattering of light; determining different characteristics with respect to Si bulk

  5. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  6. Dense granular media as athermal glasses

    OpenAIRE

    JORGE KURCHAN

    2001-01-01

    I briefly describe how mean-field glass models can be extended to the case in which the bath and friction are non-thermal, thus promoting them to granular matter mean-field caricatures. Solving their dynamics one discovers a temperature with a thermodynamic meaning associated with the slow rearrangements, even though there is no thermodynamic temperature at level of fast dynamics. This temperature can be shown to match the one defined on the basis of a flat measure over blocked (jammed) confi...

  7. Silicone breast implants: A review

    International Nuclear Information System (INIS)

    The diagnostic imaging procedures used to evaluate silicone prostheses used for breast augmentation are reviewed. The nature of silicone and the types of prostheses used are discussed, as are the complications and risks from use of these prostheses. For each imaging modality, mammography, ultrasound, and magnetic resonance imaging, criteria for rupture with examples of silicone leak into adjacent tissues are given. Copyright (1998) Blackwell Science Pty Ltd

  8. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N; Franco, A; Riesen, Y.; Despeisse, M; S. Dunand; Powolny, F; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  9. Silicon electrodeposition in molten fluorides

    OpenAIRE

    Bieber, Anne-Laure; Massot, Laurent; Gibilaro, Mathieu; Cassayre, Laurent; Taxil, Pierre; Chamelot, Pierre

    2011-01-01

    Silicon nucleation process was investigated in molten NaF-KF (40-60 mol%) on silver electrodes in the 820-950°C temperature range in order to optimize silicon coating operating conditions. Chronoamperometric measurements evidenced that silicon electrodeposition process involved an instantaneous nucleation with diffusion-controlled nuclei growth whatever temperature and Si(IV) ions concentration in the mixture. The overpotential and temperature influence on nucleation sites number was also stu...

  10. Silicon clusters: Chemistry and structure

    Energy Technology Data Exchange (ETDEWEB)

    Jarrold, M.F.; Ray, U.; Ijiri, Y. (AT and T Bell Labs., Murray Hill, NJ (USA))

    1991-01-01

    The chemical reactions of size selected silicon cluster ions (containing up to 70 atoms) have been studied with a number of different reagents using injected ion drift tube techniques. Both kinetic and equilibrium measurements have been performed as a function of temperature, and the influence of cluster annealing on chemical reactivity explored. Unlike metal clusters, where bulk behavior appears to be approached with around 30 atoms, large silicon clusters (n up to 70) are much less reactive than bulk silicon surfaces. These results suggest that the clusters in the size range examined here are not small crystals of bulk silicon, but have compact, high coordination number structures with few dangling bonds. (orig.).

  11. Social Networks in Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ Social network is a dominant, distinguishing characteristic of Silicon Valley. Because innovation entails coping with a high degree of uncertainty,such innovation is particularly dependent on networks.

  12. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  13. CMS Silicon Strip Tracker Monitoring

    CERN Document Server

    Mersi, Stefano

    2010-01-01

    The CMS Silicon Strip Tracker is the largest detector of its kind ever operated, with a silicon surface area of about 200 m$^2$ of silicon surface. The Silicon Strip Tracker it is the sub-detector with the highest number of detector modules within the CMS experiment. Given the complexity of the device, a variety of tools were developed and are used to determine the status of the detector in real time and allow for data qualification and corrective actions when needed. In this paper we describe the monitoring techniques that are used to safely operate the detector and assess the state of its calibration.

  14. Single crystalline mesoporous silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  15. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    OpenAIRE

    Walder Cordula; Kellermann Martin; Wendler Elke; Rensberg Jura; von Maydell Karsten; Agert Carsten

    2015-01-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or ...

  16. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    1998-01-01

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material. The...

  17. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Walder Cordula

    2015-01-01

    Full Text Available Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H or amorphous silicon oxide (a-SiO:H is more suited for this type of top cell absorber. Our single cell results show a better performance of amorphous silicon carbide with respect to fill factor and especially open circuit voltage at equivalent Tauc bandgaps. The microstructure factor of single layers indicates less void structure in amorphous silicon carbide than in amorphous silicon oxide. Yet photoconductivity of silicon oxide films seems to be higher which could be explained by the material being not truly intrinsic. On the other hand better cell performance of amorphous silicon carbide absorber layers might be connected to better hole transport in the cell.

  18. Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

    Science.gov (United States)

    Walder, Cordula; Kellermann, Martin; Wendler, Elke; Rensberg, Jura; von Maydell, Karsten; Agert, Carsten

    2015-02-01

    Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or amorphous silicon oxide (a-SiO:H) is more suited for this type of top cell absorber. Our single cell results show a better performance of amorphous silicon carbide with respect to fill factor and especially open circuit voltage at equivalent Tauc bandgaps. The microstructure factor of single layers indicates less void structure in amorphous silicon carbide than in amorphous silicon oxide. Yet photoconductivity of silicon oxide films seems to be higher which could be explained by the material being not truly intrinsic. On the other hand better cell performance of amorphous silicon carbide absorber layers might be connected to better hole transport in the cell.

  19. Pulsed laser irradiation of silicon

    International Nuclear Information System (INIS)

    Pulsed laser irradiation of silicon was investigated with a ruby laser, having a pulse width of 30 ns and a variable energy up to 1.5 Joules. Peak powers as high as 50 MW are obtained, which is sufficient to cause melting to depths of a few thousand angstroem. In this study, development of heat flow theory made it possible to calculate temperature profiles in silicon during pulsed laser irradiation. Silicon self-diffusion measurements, laser annealing of damage in As implanted silicon, and laser induced doping of single crystal silicon was also investigated. A computer programme was used to calculate the temperature profiles in silicon during pulsed laser irradiation. Radioactive 31Si (half-life = 2.62 hours) was used to determine for the first time the self-diffusion of silicon in silicon during pulsed laser irradiation. Radioactivity profiles in the silicon sample were measured by anodic oxidation, sequential removal of the formed SiO2 by etching in dilute HF and measurement of the radioactivity left in the sample. The removal of damage caused during ion implantation of Si substrates with As was investigated by using laser annealing. Rutherford backscattering of charged nuclear paricles coupled with the channeling technique, showed that an amorphous layer 1140 A thick formed during implantation. Complete removal of this damage only started to take place at energies high enough to cause melting to depths greater than the amorphous/single crystal interface. During resolidification, the molten silicon regrows epitaxially leading to complete removal of all the damage. Disorder removal started at 0.6 Jcm-2, while complete damage removal was achieved at energies above 1.5 Jcm-2. The doping of silicon with Sb, Bi and In by laser assisted diffusion was investigated from evaporated layers as well as solutions of these dopants

  20. Hall mobility in multicrystalline silicon

    Science.gov (United States)

    Schindler, F.; Geilker, J.; Kwapil, W.; Warta, W.; Schubert, M. C.

    2011-08-01

    Knowledge of the carrier mobility in silicon is of utmost importance for photovoltaic applications, as it directly influences the diffusion length and thereby the cell efficiency. Moreover, its value is needed for a correct quantitative evaluation of a variety of lifetime measurements. However, models that describe the carrier mobility in silicon are based on theoretical calculations or fits to experimental data in monocrystalline silicon. Multicrystalline (mc) silicon features crystal defects such as dislocations and grain boundaries, with the latter possibly leading to potential barriers through the trapping of charge carriers and thereby influencing the mobility, as shown, for example, by Maruska et al. [Appl. Phys. Lett. 36, 381 (1980)]. To quantify the mobilities in multicrystalline silicon, we performed Hall measurements in p-type mc-Si samples of various resistivities and different crystal structures and compared the data to majority carrier Hall mobilities in p-type monocrystalline floatzone (FZ) silicon. For lack of a model that provides reliable values of the Hall mobility in silicon, an empirical fit similar to existing models for conductivity mobilities is proposed based on Hall measurements of monocrystalline p-type FZ silicon. By comparing the measured Hall mobilities obtained from mc silicon with the corresponding Hall mobilities in monocrystalline silicon of the same resistivity, we found that the mobility reduction due to the presence of crystal defects in mc-Si ranges between 0% and 5% only. Mobility decreases of up to 30% as reported by Peter et al. [Proceedings of the 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 1-5 September 2008], or even of a factor of 2 to 3 as detected by Palais et al. [Mater. Sci. Eng. B 102, 184 (2003)], in multicrystalline silicon were not observed.

  1. Microwave plasma etching of silicon and silicon dioxide

    International Nuclear Information System (INIS)

    Studies are being conducted on the etching characteristics of silicon and silicon dioxide in a microwave plasma etching system having a pulse modulated microwave source. The source can be adjusted for varying pulse widths and duty cycles. A slotted waveguide is used to radiate the microwaves from the source into a quartz chamber where the process gas (a mixture of sulfur hexaflouride and oxygen) is ionized. Magnetic field coils around the quartz chamber set up a condition of electron-cyclotron resonance inside the chamber so that more efficient ionization can occur. The resulting plasma flows out of the bottom of the chamber and onto a biased platform where the silicon samples are placed. Etch characteristics that are being examined include etch rate, etch anisotropy, and etching selectivity between silicon and silicon dioxide

  2. Amorphous silicon carbide films prepared using vaporized silicon ink

    Science.gov (United States)

    Masuda, Takashi; Shen, Zhongrong; Takagishi, Hideyuki; Ohdaira, Keisuke; Shimoda, Tatsuya

    2014-03-01

    The deposition of wide-band-gap silicon films using nonvacuum processes rather than conventional vacuum processes is of substantial interest because it may reduce cost. Herein, we present the optical and electrical properties of p-type hydrogenated amorphous silicon carbide (a-SiC:H) films prepared using a nonvacuum process in a simple chamber with a vaporized silicon ink consisting of cyclopentasilane, cyclohexene, and decaborane. The incorporation of carbon into the silicon network induced by the addition of cyclohexene to the silicon ink resulted in an increase in the optical band gap (Eg) of films from 1.56 to 2.11 eV. The conductivity of films with Eg 1.9 eV show lower conductivity than expected because of the incorporation of excess carbon without the formation of Si-C bonds.

  3. Nanoparticles in hydrogenated silicon

    Czech Academy of Sciences Publication Activity Database

    Stuchlík, Jiří; Stuchlíková, The-Ha; Dřínek, Vladislav; Remeš, Zdeněk; Kočka, Jan

    Praha : Czechoslovak Association for Crystal Growth (CSACG), 2012 - (Kožíšek, Z.; Nitsch, K.). s. 65-65 ISBN 978-80-260-2357-9. [Joint Seminar – Development of materials science in research and education /22./. 03.09.2012-07.09.2012, Lednice] R&D Projects: GA ČR GA203/09/1088; GA MŠk LC510; GA MŠk LH12236 Institutional research plan: CEZ:AV0Z10100521 Institutional support: RVO:67985858 Keywords : silicon thin films * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism

  4. Colloidal luminescent silicon nanorods.

    Science.gov (United States)

    Lu, Xiaotang; Hessel, Colin M; Yu, Yixuan; Bogart, Timothy D; Korgel, Brian A

    2013-07-10

    Silicon nanorods are grown by trisilane decomposition in hot squalane in the presence of tin (Sn) nanocrystals and dodecylamine. Sn induces solution-liquid-solid nanorod growth with dodecylamine serving as a stabilizing ligand. As-prepared nanorods do not luminesce, but etching with hydrofluoric acid to remove residual surface oxide followed by thermal hydrosilylation with 1-octadecene induces bright photoluminescence with quantum yields of 4-5%. X-ray photoelectron spectroscopy shows that the ligands prevent surface oxidation for months when stored in air. PMID:23731184

  5. Silicon Valley Lifestyle

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ As we embrace the rapid developments of the new media age,competitiveness in the field of internet and computer technology is an increasingly crucial factor in stimulating new business,jobs and new industry in the region.Accelerating advancements in new media,internet,software and computer technologies offer new commercial opportunities and sources of economic revenue. Silicon Valley has been a model of the new age since its existence.While the dream place not only has a unique business model,but also has a very special lifestyle.

  6. Cryolite Byproduct in Silicon Production

    Science.gov (United States)

    Bartlett, R. W.

    1982-01-01

    Process reacts alumina hydrate with HF and NaF from silicon-production process. Cryolite is produced by adding reaction step to process that makes high-purity silicon from fluorosilicic acid. New extended process has been demonstrated in laboratory and could be used in commercial plants.

  7. Direct Imprinting of Liquid Silicon.

    Science.gov (United States)

    Masuda, Takashi; Takagishi, Hideyuki; Yamazaki, Ken; Shimoda, Tatsuya

    2016-04-20

    A polymeric precursor solution for semiconducting silicon called "liquid silicon" was synthesized and directly imprinted to form well-defined and fine amorphous silicon patterns. The spin-coated film was cured and imprinted followed by annealing at 380 °C to complete the polymer-to-silicon conversion. A pattern with dimensions of several hundreds of nanometers or less was obtained on a substrate. We demonstrated that the curing step before imprinting is particularly important in the imprinting process. A curing temperature of 140-180 °C was found to be optimal in terms of the film's deformability and molding properties. Fourier transform infrared spectroscopy and thermal analysis clarified that the cross-linking of the polymer due to the 1,2-hydrogen shift reaction was induced exponentially with the release of a large amount of SiH4/H2 gases at temperatures between 140 and 220 °C, leading to the solidification of the film. Consequently, the film completely lost its deformability at higher temperatures. Despite a volume shrinkage as large as 53-56% during the polymer-to-silicon conversion, well-defined angular patterns were preserved. Fine silicon patterns were formed via the direct imprinting of liquid silicon with high resolution and high throughput, demonstrating the usefulness of this technique for the future manufacturing of silicon electronics. PMID:27028558

  8. Removing Defects From Silicon Ribbon

    Science.gov (United States)

    Shimada, K.

    1982-01-01

    Proposal for removing impurities from silicon ribbon and sheet could be developed into an automated production-line process. New technique which combines ion-cluster bombardment, electron-gun heating, and plasma etching, could be key step in fabricating inexpensive solar-cell arrays. Silicon sheets and ribbons treated this way could have enhanced carrier lifetimes necessary for satisfactory solar-cell performance.

  9. Luneburg lens in silicon photonics

    OpenAIRE

    Di Falco, Andrea; Kehr, Susanne C; Leonhardt, Ulf

    2011-01-01

    The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms. (C) 2011 Optical Society of America

  10. Radiation hard cryogenic silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Casagrande, L. E-mail: luca.casagrande@cern.ch; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D' Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O' Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M

    2002-01-21

    It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors.

  11. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  12. A 110 GHz passive mode-locked fiber laser based on a nonlinear silicon-micro-ring-resonator

    International Nuclear Information System (INIS)

    Mode-locked fiber lasers have many important applications in science and engineering. In this work, we demonstrate for the first time a 110 GHz high repetition rate mode-locked fiber laser using a silicon-based micro-ring resonator (SMRR) to act as an intra-cavity optical comb filter, as well as an optical nonlinear element. No electrical bias for the SMRR is required to reduce free carrier absorption. The SMRR has a free spectral range of 0.88 nm, enforcing laser mode-locking at the 110 GHz high rate. The optical nonlinearity of the SMRR also supports the dissipative four-wave mixing effect for generating the mode-locked optical pulse trains. The mode-locked pulse-width, optical 3 dB spectral bandwidth and the time–bandwidth product (TBP) are experimentally measured under different pump currents to the erbium-doped fiber-amplifier module inside the laser cavity. The relative intensity noise and the line-width of the proposed laser are also evaluated. Furthermore, a long-term monitoring is performed. The experimental results show that the optical pulse train generated by the SMRR-based mode-locked fiber laser has a 2.6 ps pulse-width (pump current at 400 mA) at a 110 GHz high repetition rate, narrow line-width (1 kHz), high stability (under observation of an hour), and nearly Gaussian transform-limited (TBP is 0.455). (letters)

  13. Silicon-micromachined microchannel plates

    CERN Document Server

    Beetz, C P; Steinbeck, J; Lemieux, B; Winn, D R

    2000-01-01

    Microchannel plates (MCP) fabricated from standard silicon wafer substrates using a novel silicon micromachining process, together with standard silicon photolithographic process steps, are described. The resulting SiMCP microchannels have dimensions of approx 0.5 to approx 25 mu m, with aspect ratios up to 300, and have the dimensional precision and absence of interstitial defects characteristic of photolithographic processing, compatible with positional matching to silicon electronics readouts. The open channel areal fraction and detection efficiency may exceed 90% on plates up to 300 mm in diameter. The resulting silicon substrates can be converted entirely to amorphous quartz (qMCP). The strip resistance and secondary emission are developed by controlled depositions of thin films, at temperatures up to 1200 deg. C, also compatible with high-temperature brazing, and can be essentially hydrogen, water and radionuclide-free. Novel secondary emitters and cesiated photocathodes can be high-temperature deposite...

  14. Silicone Granulomas, a Growing Problem?

    Science.gov (United States)

    Park, Michelle E; Curreri, Alexis T; Taylor, Gina A; Burris, Katy

    2016-05-01

    The formation of granulomas is known to be a possible adverse effect of liquid silicone administration, used for soft tissue augmentation. Its plumping effects provide enhancement of certain body parts, such as the lips, hips, and buttocks. The desire for enhancement, perhaps influenced by popular culture and an unrealistic standard of beauty, leads individuals to seek silicone injections. There is a growing population of women and men receiving injections by unlicensed, unskilled "practitioners" not related to the healthcare profession. Complications under such circumstances are not uncommon, particularly the emergence of silicone granulomas, and the authors' medical center has seen an increase in such cases. In this case report, the authors illustrate a young patient with significant complications from her silicone injections, review current therapies for silicone granulomas, and discuss this growing medical problem. PMID:27386046

  15. Chalcogen donnors in silicon

    International Nuclear Information System (INIS)

    The electronic stucture of chalcogen impurities in silicon which give rise to deep levels in the forbidden band gap of that semiconductor is studied. The molecular cluster model within the formalism of the multiple scattering method in the Xα local density approximation was used . The surface orbitals were treated by using the Watson sphere model. Studies were carried out for the isolated substitutional sulfur and selenium impurities (Si:S and Si:Se). A pioneer investigation was performed for the nearest-neighbor impurity pairs of sulfur and selenium (Si:S2 and Si:Se2). All the systems were also analysed in the positive charge states (Si:S+, Si:Se+ and Si:Se2+) and for the isolated impurities the calculations were carried out to the spin polarized limit. The obtained results were used to interpret recent photoconductivity, photocapitance, EPR and DLTS data on these centers. It was observed that the adopted model is able to provide a satisfactory description of the electronic structure of the chalcogen impurity centers in silicon. (autor)

  16. Low-temperature formation of silicon and silicon oxide structures

    OpenAIRE

    Ishihara, R.; Trifunovic, M.; Van der Zwan, M.

    2016-01-01

    A method for low-temperature formation of a silicon/silicon-oxide structure on a substrate is described wherein the method comprises: forming a first (poly)silane layer over at least part of a substrate; transforming said first (poly)silane layer directly into a (crystalline) silicon layer by exposing said first (poly)silane layer to UV radiation comprising one or more wavelengths within the range between 100 and 450 nm; forming a second (poly)silane layer over at least part of said substrate...

  17. Silicene: silicon conquers the 2D world

    Science.gov (United States)

    Le Lay, Guy; Salomon, Eric; Angot, Thierry

    2016-01-01

    We live in the digital age based on the silicon chip and driven by Moore's law. Last July, IBM created a surprise by announcing the fabrication of a 7 nm test chip with functional transistors using, instead of just silicon, a silicon-germanium alloy. Will silicon be dethroned?

  18. Fluidized bed silicon deposition from silane

    Science.gov (United States)

    Hsu, George (Inventor); Levin, Harry (Inventor); Hogle, Richard A. (Inventor); Praturi, Ananda (Inventor); Lutwack, Ralph (Inventor)

    1984-01-01

    A process and apparatus for thermally decomposing silicon containing gas for deposition on fluidized nucleating silicon seed particles is disclosed. Silicon seed particles are produced in a secondary fluidized reactor by thermal decomposition of a silicon containing gas. The thermally produced silicon seed particles are then introduced into a primary fluidized bed reactor to form a fludized bed. Silicon containing gas is introduced into the primary reactor where it is thermally decomposed and deposited on the fluidized silicon seed particles. Silicon seed particles having the desired amount of thermally decomposed silicon product thereon are removed from the primary fluidized reactor as ultra pure silicon product. An apparatus for carrying out this process is also disclosed.

  19. Silicon detectors in imaging applications

    International Nuclear Information System (INIS)

    In this paper it is described some to those characteristics of silicon detectors which make them very useful in the fields of Medical Physics. The main application of these devices are in detecting low energy X-ray radiation (from 10 to 100 KeV). This range of energy is enough in many applications on crystallographic and on medical imaging. This paper also briefly refers to the readout system for acquiring the radiation events for imaging purposes. Finally, it is discussed the different kinds of silicon detectors which are silicon strip, pixel and drift

  20. Spectroscopic properties of porous silicon

    International Nuclear Information System (INIS)

    The research of composition and spectroscopic properties of porous silicon (por-Si) surface has been done. Complex of photoluminescence (PL), electroluminescence (EL), Auger electron spectroscopy (AES), thermostimulated exoelectron emission (TSEE), electron spin resonance (ESR) spectroscopy methods have been applied to study the chemical composition of the surface, that plays a decisive role in light-emitting properties of pot-Si. The studies were done on the composition of por-Si real surface containing pure silicon or SiHy species mixture with silicon oxides and carbon atoms as well as background impurities of chlorine, fluorine and nitrogen. (author)

  1. Single crystalline mesoporous silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hochbaum, A.I.; Gargas, Daniel; Jeong Hwang, Yun; Yang, Peidong

    2009-08-04

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  2. Silicon-to-silicon wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Weichel, Steen; Reus, Roger De; Lindahl, M.

    Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material. The...... silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...... from 25 N/mm(2) to 0 N/mm(2) at 200 degrees C. A weak dependence on feature size was observed. For bonding temperatures higher than 300 degrees C fracture occurs randomly in the bulk of the silicon, whereas for bonding temperatures lower than 300 degrees C fracture always occurs at the bonding...

  3. Growth Mechanism of Silicon Carbide (SIC) on Clean Silicon Surfaces

    International Nuclear Information System (INIS)

    An understanding of the growth mechanisms of silicon carbide (SiC) on the silicon surfaces is important not only for technological applications but also from the point of view of fundamental research. Due to the great lattice (20%) mismatch as well as to the high reaction temperature (above 1000 degrees for standard thermal techniques), rough silicon carbide surfaces with high density of defects and voids have been generally obtained. The voids are related to the low diffusion coefficient of silicon in SiC, which should enhance the Si diffusion mechanism throughout the silicon layers. Therefore, in order to improve the crystalline quality several types of precursors have been used with the aim to lower the silicon carbide temperature formation. Among the several growth processes investigated, the exposure of a hot silicon substrate to C60, acetylene, ethylene and graphite has been reported to produce cubic SiC films at temperatures in the range between 600 degrees and 900 degrees. Acetylene, in doses between 3600 and 30000 Langmuir (1 L= 1x1O-6 Torr.s), has been found to strongly react with Si(111)7x7 reconstructed substrate kept at temperature ranging between 6000C and 8000C and to form cubic silicon carbide nanostructures. They grow following the heteroepitaxial relationship SiC[111]//Si[111] and are characterized, for the highest acetylene doses, by a good crystalline quality with a rather flat morphology. A scanning tunneling microscopy (STM) study performed on Si(111)7x7 reconstructed surface imaged in real time, during low acetylene exposures (less than 600 L) while keeping the silicon surface at 6000C, has shown that this surface technique allows to image in real space the local modifications of the system and to identify the starting point of the reaction process together with its time evolution. Besides we investigated the role played by the temperature of Si(111)7x7 surface during different acetylene exposures in the morphology modification of the reacted

  4. Concentrator silicon cell research

    Energy Technology Data Exchange (ETDEWEB)

    Green, M.A.; Wenham, S.R.; Zhang, F.; Zhao, J.; Wang, A. [New South Wales Univ., Kensington (Australia). Solar Photovoltaic Lab.

    1992-04-01

    This project continued the developments of high-efficiency silicon concentrator solar cells with the goal of achieving a cell efficiency in the 26 to 27 percent range at a concentration level of 150 suns of greater. The target efficiency was achieved with the new PERL (passivated emitter, rear locally diffused) cell structure, but only at low concentration levels around 20 suns. The PERL structure combines oxide passivation of both top and rear surfaces of the cells with small area contact to heavily doped regions on the top and rear surfaces. Efficiency in the 22 to 23 percent range was also demonstrated for large-area concentrator cells fabricated with the buried contact solar cell processing sequence, either when combined with prismatic covers or with other innovative approaches to reduce top contact shadowing. 19 refs.

  5. Hydrogen implantation into silicon

    International Nuclear Information System (INIS)

    Hydrogen and deuterium implantations into crystalline silicon (c-Si) are carried out at room temperature. Infra-red spectra and electrical property studies are performed on these samples before and following annealing. Analysis of the vibrational spectra shows at least two types of bonding for hydrogen in c-Si, which are identified as SiH1, (SiH2)2 units. A strong evidence of SiH2 group formation is obtained for the relatively low hydrogen concentration in c-Si in comparison with a-Si:H. On the basis of the kinetics of formation and annealing of Si-H vibrations and scanning micrograph data it is concluded that the microvoids with reconstructed inner surfaces, and hydrogen passivating dangling bonds, are effectively produced due to divacancy type defect agglomeration followed by hydrogen trapping. The electrical properties of c-Si:H are discussed also. (author)

  6. Silicon force sensor

    Energy Technology Data Exchange (ETDEWEB)

    Galambos, Paul C.; Crenshaw, Thomas B.; Nishida, Erik E.; Burnett, Damon J.; Lantz, Jeffrey W.

    2016-07-05

    The various technologies presented herein relate to a sensor for measurement of high forces and/or high load shock rate(s), whereby the sensor utilizes silicon as the sensing element. A plate of Si can have a thinned region formed therein on which can be formed a number of traces operating as a Wheatstone bridge. The brittle Si can be incorporated into a layered structure comprising ductile and/or compliant materials. The sensor can have a washer-like configuration which can be incorporated into a nut and bolt configuration, whereby tightening of the nut and bolt can facilitate application of a compressive preload upon the sensor. Upon application of an impact load on the bolt, the compressive load on the sensor can be reduced (e.g., moves towards zero-load), however the magnitude of the preload can be such that the load on the sensor does not translate to tensile stress being applied to the sensor.

  7. Devices and architectures for large-scale integrated silicon photonics circuits

    Science.gov (United States)

    Beausoleil, Raymond G.; Faraon, Andrei; Fattal, David; Fiorentino, Marco; Peng, Zhen; Santori, Charles

    2011-01-01

    We present DWDM nanophotonics architectures based on microring resonator modulators and detectors. We focus on two implementations: an on chip interconnect for multicore processor (Corona) and a high radix network switch (HyperX). Based on the requirements of these applications we discuss the key constraints on the photonic circuits' devices and fabrication techniques as well as strategies to improve their performance.

  8. Simulation in Amorphous Silicon and Amorphous Silicon Carbide Pin Diodes

    OpenAIRE

    Gonçalves, Dora; Fernandes, Miguel; Louro, Paula; Fantoni, Alessandro; Vieira, Manuela

    2014-01-01

    Part 21: Electronics: Devices International audience Photodiodes are devices used as image sensors, reactive to polychromatic light and subsequently color detecting, and they are also used in optical communication applications. To improve these devices performance it is essential to study and control their characteristics, in fact their capacitance and spectral and transient responses. This study considers two types of diodes, an amorphous silicon pin and an amorphous silicon carbide pi...

  9. Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

    Directory of Open Access Journals (Sweden)

    Eugenijus SHATKOVSKIS

    2012-09-01

    Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

  10. Proton beam induced luminescence of silicon dioxide implanted with silicon

    International Nuclear Information System (INIS)

    Light emission from a silicon dioxide layer enriched with silicon has been studied. Samples used had structures made on thermally oxidized silicon substrate wafers. Excess silicon atoms were introduced into a 250-nm-thick silicon dioxide layer via implantation of 60 keV Si+ ions up to a fluence of 2 x 1017 cm-2. A 15-nm-thick Au layer was used as a top semitransparent electrode. Continuous blue light emission was observed under DC polarization of the structure at 8-12 MV/cm. The blue light emission from the structures was also observed in an ionoluminescence experiment, in which the light emission was caused by irradiation with a H2+ ion beam of energy between 22 and 100 keV. In the case of H2+, on entering the material the ions dissociated into two protons, each carrying on average half of the incident ion energy. The spectra of the emitted light and the dependence of ionoluminescence on proton energy were analyzed and the results were correlated with the concentration profile of implanted silicon atoms.

  11. Proton beam induced luminescence of silicon dioxide implanted with silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gawlik, Grzegorz [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warszawa (Poland)], E-mail: grzegorz.gawlik@itme.edu.pl; Jagielski, Jacek [Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warszawa (Poland); Andrzej Soltan Institute for Nuclear Studies, 05-400 Otwock/Swierk (Poland); Stonert, Anna; Ratajczak, Renata [Andrzej Soltan Institute for Nuclear Studies, 05-400 Otwock/Swierk (Poland)

    2009-08-15

    Light emission from a silicon dioxide layer enriched with silicon has been studied. Samples used had structures made on thermally oxidized silicon substrate wafers. Excess silicon atoms were introduced into a 250-nm-thick silicon dioxide layer via implantation of 60 keV Si{sup +} ions up to a fluence of 2 x 10{sup 17} cm{sup -2}. A 15-nm-thick Au layer was used as a top semitransparent electrode. Continuous blue light emission was observed under DC polarization of the structure at 8-12 MV/cm. The blue light emission from the structures was also observed in an ionoluminescence experiment, in which the light emission was caused by irradiation with a H{sub 2}{sup +} ion beam of energy between 22 and 100 keV. In the case of H{sub 2}{sup +}, on entering the material the ions dissociated into two protons, each carrying on average half of the incident ion energy. The spectra of the emitted light and the dependence of ionoluminescence on proton energy were analyzed and the results were correlated with the concentration profile of implanted silicon atoms.

  12. Characterization of silicon-silicon carbide ceramic derived from carbon-carbon silicon carbide composites

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Vijay K. [Indian Institute of Technology, Varanasi (India). Dept. of Mechanical Engineering; Krenkel, Walter [Univ. of Bayreuth (Germany). Dept. of Ceramic Materials Engineering

    2013-04-15

    The main objective of the present work is to process porous silicon - silicon carbide (Si - SiC) ceramic by the oxidation of carboncarbon silicon carbide (C/C - SiC) composites. Phase studies are performed on the oxidized porous composite to examine the changes due to the high temperature oxidation. Further, various characterization techniques are performed on Si- SiC ceramics in order to study the material's microstructure. The effects of various parameters such as fiber alignment (twill weave and short/chopped fiber) and phenolic resin type (resol and novolak) are characterized.

  13. The History of Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2005-01-01

    @@ Just as Manchester was once the center for indus trial progress, the microelectronics industry also has a heartland. Silicon Valley is located in a thirty by ten miles strip between San Francisco and San Jose,California.

  14. Optical information capacity of silicon

    CERN Document Server

    Dimitropoulos, Dimitris

    2014-01-01

    Modern computing and data storage systems increasingly rely on parallel architectures where processing and storage load is distributed within a cluster of nodes. The necessity for high-bandwidth data links has made optical communication a critical constituent of modern information systems and silicon the leading platform for creating the necessary optical components. While silicon is arguably the most extensively studied material in history, one of its most important attributes, an analysis of its capacity to carry optical information, has not been reported. The calculation of the information capacity of silicon is complicated by nonlinear losses, phenomena that emerge in optical nanowires as a result of the concentration of optical power in a small geometry. Nonlinear losses are absent in silica glass optical fiber and other common communication channels. While nonlinear loss in silicon is well known, noise and fluctuations that arise from it have never been considered. Here we report sources of fluctuations...

  15. Silicon chemistry in interstellar clouds

    Energy Technology Data Exchange (ETDEWEB)

    Langer, W.D.; Glassgold, A.E. (AT T Bell Laboratories, Murray Hill, NJ (USA) New York Univ., NY (USA))

    1990-03-01

    A new model of interstellar silicon chemistry is presented that explains the lack of SiO detections in cold clouds and contains an exponential temperature dependence for the SiO abundance. A key aspect of the model is the sensitivity of SiO production by neutral silicon reactions to density and temperature, which arises from the dependence of the rate coefficients on the population of the excited fine-structure levels of the silicon atom. As part of the explanation of the lack of SiO detections at low temperatures and densities, the model also emphasizes the small efficiencies of the production routes and the correspondingly long times needed to reach equilibrium. Measurements of the abundance of SiO, in conjunction with theory, can provide information on the physical properties of interstellar clouds such as the abundance of oxygen bearing molecules and the depletion of interstellar silicon. 38 refs.

  16. Scattering characteristics from porous silicon

    Directory of Open Access Journals (Sweden)

    R. Sabet-Dariani

    2000-12-01

    Full Text Available   Porous silicon (PS layers come into existance as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet.   In this article, first, the optical properties of silicon and porous silicon are described. Then, previous research and the proposed models about reflection from PS and the origin of its photoluminescence are reveiwed. The reflecting and scattering, absorption and transmission of light from this material, are then investigated. These experiments include,different methods of PS sample preparation their photoluminescence, reflecting and scattering of light determining different characteristics with respect to Si bulk.

  17. Reaction-bonded silicon nitride

    International Nuclear Information System (INIS)

    Reaction-bonded silicon nitride (RBSN) has been characterized. The oxidation behaviour in air up to 15000C and 3000 h and the effects of static and cyclic oxidation on room-temperature strength have been studied. (orig./IHOE)

  18. Social Networks in Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph; Leu

    2006-01-01

      Social network is a dominant, distinguishing characteristic of Silicon Valley. Because innovation entails coping with a high degree of uncertainty,such innovation is particularly dependent on networks.……

  19. Mid-infrared silicon photonics

    OpenAIRE

    Green, W. M. J.; Kuyken, B.; X. Liu; M. A. Van Camp; S. Assefa; D. M. Gill; T. Barwicz; Shank, S. M.; Y.A. Vlasov; Osgood Jr, R. M.; Baets, R.; Roelkens, G.

    2013-01-01

    A mid-infrared silicon nanophotonic integrated circuit platform can have broad impact upon environmental monitoring, personalized healthcare, and public safety applications. Development of various mid-IR components, including optical parametric amplifiers, sources, modulators, and detectors, is reviewed.

  20. Vibrational modes of porous silicon

    International Nuclear Information System (INIS)

    On the basis of theoretical and experimental investigations, the origin of room temperature photoluminescence (PL) from porous silicon is found to related to chemical complexes constituted the surface, in particular, SiHx, SiOx and SiOH groups. Ab initio atomic and molecular electronic structure calculations on select siloxane compounds were used for imitation of infrared (IR) spectra of porous silicon. These are compared to the IR spectra of porous silicon recorded by using Fourier Transform Infrared Spectroscopy (FTIR). In contrast to linear siloxane, the suggested circular siloxane terminated with linear siloxane structure is found to well-imitate the experimental spectra. These results are augmented with EDX (energy dispersive x-ray spectroscopy) measurements, which showed that the increase of SiOx content in porous silicon due to rapid oxidation process results in considerable decrease in PL peak intensity and a blue shift in the peak position. (author)

  1. SILICONE RUBBER MOULDS FOR FOOTWEAR

    Directory of Open Access Journals (Sweden)

    Cornelia LUCA

    2013-05-01

    Full Text Available The leather confections industry uses the silicone rubber moulds for the symbols,notices and models stamping on the footwear or morocco goods parts. The paper presents somecontributions in this kind of devices manufacturing technology

  2. SILICONE RUBBER MOULDS FOR FOOTWEAR

    OpenAIRE

    LUCA Cornelia; Rãzvan MOCANU

    2013-01-01

    The leather confections industry uses the silicone rubber moulds for the symbols,notices and models stamping on the footwear or morocco goods parts. The paper presents somecontributions in this kind of devices manufacturing technology

  3. Evanescent field phase shifting in a silicon nitride waveguide using a coupled silicon slab

    DEFF Research Database (Denmark)

    Jensen, Asger Sellerup; Oxenløwe, Leif Katsuo; Green, William M. J.

    An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration.......An approach for electrical modulation of low-loss silicon nitride waveguides is proposed, using a silicon nitride waveguide evanescently loaded with a thin silicon slab. The thermooptic phase-shift characteristics are investigated in a racetrack resonator configuration....

  4. Molecular dynamics studies of the bonding properties of amorphous silicon nitride coatings on crystalline silicon

    OpenAIRE

    Butler, K.T.; Lamers, M.P.W.E.; Weeber, A. W.; Harding, J. H.

    2011-01-01

    In this paper we present molecular dynamics simulations of silicon nitride, both in bulk and as an interface to crystalline silicon. We investigate, in particular, the bonding structure of the silicon nitride and analyze the simulations to search for de- fective geometries which have been identified as potential charge carrier traps when silicon nitride forms an interface with silicon semiconductors. The simulations reveal how the bonding patterns in silicon nitride are dependent upon the sto...

  5. Quasimetallic silicon micromachined photonic crystals

    International Nuclear Information System (INIS)

    We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations

  6. Seedless electroplating on patterned silicon

    OpenAIRE

    Vargas llona, L.D.; Jansen, H.V.; Elwenspoek, M C

    2006-01-01

    Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate bath on both n+- and p+-type silicon wafers, where a series of trenches with different widths had been previously etched by plasma etching. A new, reliable and simple procedure based on the remova...

  7. Silicon Photonics: The Inside Story

    OpenAIRE

    Jalali, Bahram

    2008-01-01

    The electronic chip industry embodies the height of technological sophistication and economics of scale. Fabricating inexpensive photonic components by leveraging this mighty manufacturing infrastructure has fueled intense interest in silicon photonics. If it can be done economically and in an energy efficient manner, empowering silicon with optical functionality will bring optical communications to the realm of computers where limitations of metallic interconnects are threatening the industr...

  8. Optical gain in porous silicon

    Czech Academy of Sciences Publication Activity Database

    Herynková, Kateřina; Pelant, Ivan

    Cham : Springer International Publishing, 2014 - (Canham, L.), s. 345-354 ISBN 978-3-319-05743-9 R&D Projects: GA ČR GPP204/12/P235; GA AV ČR KJB100100903; GA AV ČR(CZ) IAA101120804 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * porous silicon * optical gain Subject RIV: BM - Solid Matter Physics ; Magnetism

  9. Silicone nanocomposite coatings for fabrics

    Science.gov (United States)

    Eberts, Kenneth (Inventor); Lee, Stein S. (Inventor); Singhal, Amit (Inventor); Ou, Runqing (Inventor)

    2011-01-01

    A silicone based coating for fabrics utilizing dual nanocomposite fillers providing enhanced mechanical and thermal properties to the silicone base. The first filler includes nanoclusters of polydimethylsiloxane (PDMS) and a metal oxide and a second filler of exfoliated clay nanoparticles. The coating is particularly suitable for inflatable fabrics used in several space, military, and consumer applications, including airbags, parachutes, rafts, boat sails, and inflatable shelters.

  10. Silicone-Rubber Stitching Seal

    Science.gov (United States)

    Wang, D. S.

    1985-01-01

    Fabric products protected from raveling by coating threads and filling stitching holes with silicone rubber. Uncored silicone rubber applied to stitching lines with air-pressurized sealant gun. Next, plastic release film placed on coated side, and blanket flipped over so release film lies underneath. Blanket then bagged and adhesive cured under partial vacuum of about 3.5 psi or under pressure. Applications include balloons, parachutes, ultralight aircraft, sails, rescue harnesses, tents, or other fabric products highly stressed in use.

  11. Silicon microcantilevers with MOSFET detection

    OpenAIRE

    Tosolini, Giordano; Villanueva, G.; Pérez Murano, Francesc; Bausells, Joan

    2010-01-01

    We report the fabrication of silicon microcantilevers with MOSFET detection, to be used in force measurements for biomolecular detection. Thin cantilevers are required for a high force sensitivity. Therefore the source and drain of the transistors have been fabricated by As implantation to obtain shallow PN junctions. The cantilevers have been oriented on the non-standard (1 0 0) crystallographic direction of silicon, to maximize the stress response of the NMOS transistors. The force sensitiv...

  12. Direct Production of Silicones From Sand

    Energy Technology Data Exchange (ETDEWEB)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  13. Deposited low temperature silicon GHz modulator

    CERN Document Server

    Lee, Yoon Ho Daniel; Lipson, Michal

    2013-01-01

    The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This discrepancy is a result of silicon photonics's requirement for a single-crystalline silicon (c-Si) layer and a thick undercladding for optical guiding that bulk silicon wafers to not provide. While the undercladding problem can be partially addressed by substrate removal techniques, the complexity of co-integrating photonics with state-of-the-art transistors and real estate competition between electronics and photonics remain problematic. We show here a platform for deposited GHz silicon photonics based on polycrystalline silicon with high optical quality suitable for high performance electro-optic devices. We demonstrate 3 Gbps polysilicon electro-optic modulator fabricated on a deposited polysilicon layer fully compatible with CMOS backend integration. These results open up an arr...

  14. Silicon Photomultipliers Characterization

    Science.gov (United States)

    Bowser, Christopher; Tzolov, Marian; Barbi, Nick

    Low noise and high sensitivity photon detectors such as the Photomultiplier Tube (PMT) are very common instruments used in research and many other applications. The PMTs have drawbacks such as durability, size, and sensitivity to magnetic field which make them unsuitable for some tasks. Silicon Photomultipliers (SiPMs) are compact, solid state detectors with gain close to that of a PMT, which are a promising replacement of a PMT. We have studied two types of SiPMs designed for optimum response in the visible and near-UV spectral range. We have verified the basic electrical parameters of the devices using current-voltage characteristics and impedance spectroscopy in dark. The spectral response was measured in DC mode, which is very simple to realize and still delivers very good sensitivity. We have established the linearity of the photoresponse and the limits at high intensity illumination. The pairing of the SiPMs with several common scintillators was studied with the goal of optimum performance of the SiPM/scintillator pair.

  15. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  16. Silicon Photomultiplier charaterization

    Science.gov (United States)

    Munoz, Leonel; Osornio, Leo; Para, Adam

    2014-03-01

    Silicon Photo Multiples (SiPM's) are relatively new photon detectors. They offer many advantages compared to photo multiplier tubes (PMT's) such as insensitivity to magnetic field, robustness at varying lighting levels, and low cost. The SiPM output wave forms are poorly understood. The experiment conducted collected waveforms of responses of Hamamatsu SiPM to incident laser pulse at varying temperatures and bias voltages. Ambient noise was characterized at all temperatures and bias voltages by averaging the waveforms. Pulse shape of the SiPM response was determined under different operating conditions: the pulse shape is nearly independent of the bias voltage but exhibits strong variation with temperature, consistent with the temperature variation of the quenching resistor. Amplitude of responses of the SiPM to low intensity laser light shows many peaks corresponding to the detection of 1,2,3 etc. photons. Amplitude of these pulses depends linearly on the bias voltage, enabling determination of the breakdown voltage at each temperature. Poisson statistics has been used to determine the average number of detected photons at each operating conditions. Department of Education Grant No. P0315090007 and the Department of Energy/ Fermi National Accelerator Laboratory.

  17. Nanoporous silicon oxide memory.

    Science.gov (United States)

    Wang, Gunuk; Yang, Yang; Lee, Jae-Hwang; Abramova, Vera; Fei, Huilong; Ruan, Gedeng; Thomas, Edwin L; Tour, James M

    2014-08-13

    Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiOx) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiOx memory exhibited an extremely low electroforming voltage (∼ 1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10(7) A), a long high-temperature lifetime (≥ 10(4) s at 100 °C), excellent cycling endurance (≥ 10(5)), sub-50 ns switching speeds, and low power consumption (∼ 6 × 10(-5) W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiOx RRAM provide a route toward easily accessed nonvolatile memory applications. PMID:24992278

  18. Next generation structural silicone glazing

    Directory of Open Access Journals (Sweden)

    Charles D. Clift

    2015-06-01

    Full Text Available This paper presents an advanced engineering evaluation, using nonlinear analysis of hyper elastic material that provides significant improvement to structural silicone glazing (SSG design in high performance curtain wall systems. Very high cladding wind pressures required in hurricane zones often result in bulky SSG profile dimensions. Architectural desire for aesthetically slender curtain wall framing sight-lines in combination with a desire to reduce aluminium usage led to optimization of silicone material geometry for better stress distribution.To accomplish accurate simulation of predicted behaviour under structural load, robust stress-strain curves of the silicone material are essential. The silicone manufacturer provided physical property testing via a specialized laboratory protocol. A series of rigorous curve fit techniques were then made to closely model test data in the finite element computer analysis that accounts for nonlinear strain of hyper elastic silicone.Comparison of this advanced design technique to traditional SSG design highlights differences in stress distribution contours in the silicone material. Simplified structural engineering per the traditional SSG design method does not provide accurate forecasting of material and stress optimization as shown in the advanced design.Full-scale specimens subject to structural load testing were performed to verify the design capacity, not only for high wind pressure values, but also for debris impact per ASTM E1886 and ASTM E1996. Also, construction of the test specimens allowed development of SSG installation techniques necessitated by the unique geometry of the silicone profile. Finally, correlation of physical test results with theoretical simulations is made, so evaluation of design confidence is possible. This design technique will introduce significant engineering advancement to the curtain wall industry.

  19. Palladium interaction with silicon carbide

    International Nuclear Information System (INIS)

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC–5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2 phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2 phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOy phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation

  20. Palladium interaction with silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, M., E-mail: Marialuisa.Gentile@manchester.ac.uk [Centre for Nuclear Energy Technology (C-NET), School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M13 9PL (United Kingdom); Xiao, P. [Materials Science Centre, School of Materials, The University of Manchester, Manchester M13 9PL (United Kingdom); Abram, T. [Centre for Nuclear Energy Technology (C-NET), School of Mechanical, Aerospace and Civil Engineering, The University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-07-15

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC–5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd{sub 3}Si and SiO{sub 2} phases, while the second peak and the third peak are correlated with the formation of Pd{sub 2}Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO{sub 2} phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiC{sub x}O{sub y} phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  1. Palladium interaction with silicon carbide

    Science.gov (United States)

    Gentile, M.; Xiao, P.; Abram, T.

    2015-07-01

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide reaction. Thermoscans of α-SiC pellets containing 5 at.%Pd show that during differential calorimetry scans three exothermic peaks occurred at 773 K, 1144 K and 1615 K, while thermoscans of β-SiC pellets containing 3 at.%Pd and 5 at.%Pd do not show peaks. For the pellet α-SiC-5 at.%Pd XRD spectra reveal that the first peak is associated with the formation of Pd3Si and SiO2 phases, while the second peak and the third peak are correlated with the formation of Pd2Si phase and the active oxidation of silicon carbide respectively. Thermogravimetry scans show weight gain and weight loss peaks due to the SiO2 phase formation and the active oxidation. Additionally XPS fittings reveal the development of SiCxOy phase during the first exothermic peak up to the temperature of 873 K. The experimental data reveals that alpha silicon carbide is attacked by palladium at lower temperatures than beta silicon carbide and the reaction mechanism between silicon carbide and palladium is strongly affected by silicon carbide oxidation.

  2. Silicon technology compatible photonic molecules for compact optical signal processing

    International Nuclear Information System (INIS)

    Photonic molecules (PMs) based on multiple inner coupled microring resonators allow to surpass the fundamental constraint between the total quality factor (QT), free spectral range (FSR), and resonator size. In this work, we use a PM that presents doublets and triplets resonance splitting, all with high QT. We demonstrate the use of the doublet splitting for 34.2 GHz signal extraction by filtering the sidebands of a modulated optical signal. We also demonstrate that very compact optical modulators operating 2.75 times beyond its resonator linewidth limit may be obtained using the PM triplet splitting, with separation of ∼55 GHz

  3. Silicon technology compatible photonic molecules for compact optical signal processing

    Energy Technology Data Exchange (ETDEWEB)

    Barea, Luis A. M., E-mail: barea@ifi.unicamp.br; Vallini, Felipe; Jarschel, Paulo F.; Frateschi, Newton C. [Device Research Laboratory, Applied Physics Department, “GlebWataghin” Physics Institute, University of Campinas–UNICAMP, 13083-859 Campinas, SP (Brazil)

    2013-11-11

    Photonic molecules (PMs) based on multiple inner coupled microring resonators allow to surpass the fundamental constraint between the total quality factor (Q{sub T}), free spectral range (FSR), and resonator size. In this work, we use a PM that presents doublets and triplets resonance splitting, all with high Q{sub T}. We demonstrate the use of the doublet splitting for 34.2 GHz signal extraction by filtering the sidebands of a modulated optical signal. We also demonstrate that very compact optical modulators operating 2.75 times beyond its resonator linewidth limit may be obtained using the PM triplet splitting, with separation of ∼55 GHz.

  4. Indentation fatigue in silicon nitride, alumina and silicon carbide ceramics

    Indian Academy of Sciences (India)

    A K Mukhopadhyay

    2001-04-01

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker’s microhardness tester at various loads in the range 1–20 N. Subsequently, the gradual evolution of the damage was characterized using an optical microscope in conjunction with the image analysing technique. The materials were classified in the order of the decreasing resistance against repeated indentation fatigue at the highest applied load of 20 N. It was further shown that there was a strong influence of grain size on the development of resistance against repeated indentation fatigue on the same spot. Finally, the poor performance of the sintered silicon carbide was found out to be linked to its previous thermal history.

  5. Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances.

    Science.gov (United States)

    van Sebille, Martijn; Allebrandi, Jort; Quik, Jim; van Swaaij, René A C M M; Tichelaar, Frans D; Zeman, Miro

    2016-12-01

    We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step. PMID:27492439

  6. Silicon nitride passivated bifacial Cz-silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Janssen, L. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Solland Solar Cells GmbH, Bohr 12, 52072 Aachen (Germany); Windgassen, H.; Baetzner, D.L. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Bitnar, B.; Neuhaus, H. [Deutsche Cell GmbH, Berthelsdorfer Str. 111a, 09599 Freiberg (Germany)

    2009-08-15

    A new process for all silicon nitride passivated silicon solar cells with screen printed contacts is analysed in detail. Since the contacts are fired through the silicon nitride layers on both sides, the process is easy to adapt to industrial production. The potential and limits of the presented bifacial design are simulated and discussed. The effectiveness of the presented process depends strongly on the base doping of the substrate, but only the open circuit voltage is affected. The current is mainly determined by the rear surface passivation properties. Thus, using a low resistivity (<1.5{omega}cm) base material higher efficiencies compared to an aluminium back surface field can be achieved. (author)

  7. Visible light emission from silicon

    International Nuclear Information System (INIS)

    Although crystalline silicon is not expected to emit light in the visible range, bright red emission has been reported for high porosity porous silicon films. This recent discovery which opens the door to silicon-based optoelectronics has raised up a great interest in the scientific community, and the paper presents the state of art of the question after a year of investigations. After a short presentation of the main features of porous silicon, the different characteristics of the photoluminescence phenomena are described in some detail. In this paper, the evolution of the emission spectra with the properties of the material which can be varied by chemical or electrochemical methods are presented. Results confirm that quantum size effects within the crystalline material can be responsible for the light emission far above the band gap of silicon. Bright electroluminescence has also been evidenced during anodic oxidation of the material. The dependence of this emission with the material properties and the characteristics of the oxidation process will be discussed and compared t the photoluminescence features

  8. Silicon Heat Pipe Array

    Science.gov (United States)

    Yee, Karl Y.; Ganapathi, Gani B.; Sunada, Eric T.; Bae, Youngsam; Miller, Jennifer R.; Beinsford, Daniel F.

    2013-01-01

    Improved methods of heat dissipation are required for modern, high-power density electronic systems. As increased functionality is progressively compacted into decreasing volumes, this need will be exacerbated. High-performance chip power is predicted to increase monotonically and rapidly with time. Systems utilizing these chips are currently reliant upon decades of old cooling technology. Heat pipes offer a solution to this problem. Heat pipes are passive, self-contained, two-phase heat dissipation devices. Heat conducted into the device through a wick structure converts the working fluid into a vapor, which then releases the heat via condensation after being transported away from the heat source. Heat pipes have high thermal conductivities, are inexpensive, and have been utilized in previous space missions. However, the cylindrical geometry of commercial heat pipes is a poor fit to the planar geometries of microelectronic assemblies, the copper that commercial heat pipes are typically constructed of is a poor CTE (coefficient of thermal expansion) match to the semiconductor die utilized in these assemblies, and the functionality and reliability of heat pipes in general is strongly dependent on the orientation of the assembly with respect to the gravity vector. What is needed is a planar, semiconductor-based heat pipe array that can be used for cooling of generic MCM (multichip module) assemblies that can also function in all orientations. Such a structure would not only have applications in the cooling of space electronics, but would have commercial applications as well (e.g. cooling of microprocessors and high-power laser diodes). This technology is an improvement over existing heat pipe designs due to the finer porosity of the wick, which enhances capillary pumping pressure, resulting in greater effective thermal conductivity and performance in any orientation with respect to the gravity vector. In addition, it is constructed of silicon, and thus is better

  9. Porous silicon carbide (SIC) semiconductor device

    Science.gov (United States)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1996-01-01

    Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

  10. Gallium-Catalyzed Silicon Oxide Nanowire Growth

    Institute of Scientific and Technical Information of China (English)

    Zheng Wei Pan; Sheng Dai; Douglas H.Lowndes

    2005-01-01

    Silicon oxide nanowires tend to assemble into various complex morphologies through a metalcatalyzed vapor-liquid-solid (VLS) growth process. This article summarizes our recent efforts in the controlled growth of silicon oxide nanowire assemblies by using molten gallium as the catalyst and silicon wafer,SiO powder, or silane (SiH4) as the silicon sources. Silicon oxide nanowire assemblies with morphologies of carrotlike, cometlike, gourdlike, spindlelike, badmintonlike, sandwichlike, etc. were obtained. Although the morphologies of the nanowire assemblies are temperature- and silicon source-dependent, they share similar structural and compositional features: all the assemblies contain a microscale spherical liquid Ga ball and a highly aligned, closely packed amorphous silicon oxide nanowire bunch. The Ga-catalyzed silicon oxide nanowire growth reveals several interesting new nanowire growth phenomena that expand our knowledge of the conventional VLS nanowire growth mechanism.

  11. Birefringence Measurements on Crystalline Silicon

    CERN Document Server

    Krüger, Christoph; Khalaidovski, Alexander; Steinlechner, Jessica; Nawrodt, Ronny; Schnabel, Roman; Lück, Harald

    2015-01-01

    Crystalline silicon has been proposed as a new test mass material in third generation gravitational wave detectors such as the Einstein Telescope (ET). Birefringence can reduce the interferometric contrast and can produce dynamical disturbances in interferometers. In this work we use the method of polarisation-dependent resonance frequency analysis of Fabry-Perot-cavities containing silicon as a birefringent medium. Our measurements show a birefringence of silicon along the (111) axis of the order of $\\Delta\\, n \\approx 10^{-7}$ at a laser wavelength of 1550nm and room temperature. A model is presented that explains the results of different settings of our measurements as a superposition of elastic strains caused by external stresses in the sample and plastic strains possibly generated during the production process. An application of our theory on the proposed ET test mass geometry suggests no critical effect on birefringence due to elastic strains.

  12. Birefringence measurements on crystalline silicon

    Science.gov (United States)

    Krüger, Christoph; Heinert, Daniel; Khalaidovski, Alexander; Steinlechner, Jessica; Nawrodt, Ronny; Schnabel, Roman; Lück, Harald

    2016-01-01

    Crystalline silicon has been proposed as a new test mass material in third generation gravitational wave detectors such as the Einstein telescope (ET). Birefringence can reduce the interferometric contrast and can produce dynamical disturbances in interferometers. In this work we use the method of polarization-dependent resonance-frequency analysis of Fabry-Perot-cavities containing silicon as a birefringent medium. Our measurements show a birefringence of silicon along the (111) axis of the order of {{Δ }} n≈ {10}-7 at a laser wavelength of 1550 nm and room temperature. A model is presented that explains the results of different settings of our measurements as a superposition of elastic strains caused by external stresses in the sample and plastic strains possibly generated during the production process. An application of our theory on the proposed ET test mass geometry suggests no critical effect on birefringence due to elastic strains.

  13. Direct band gap silicon allotropes.

    Science.gov (United States)

    Wang, Qianqian; Xu, Bo; Sun, Jian; Liu, Hanyu; Zhao, Zhisheng; Yu, Dongli; Fan, Changzeng; He, Julong

    2014-07-16

    Elemental silicon has a large impact on the economy of the modern world and is of fundamental importance in the technological field, particularly in solar cell industry. The great demand of society for new clean energy and the shortcomings of the current silicon solar cells are calling for new materials that can make full use of the solar power. In this paper, six metastable allotropes of silicon with direct or quasidirect band gaps of 0.39-1.25 eV are predicted by ab initio calculations at ambient pressure. Five of them possess band gaps within the optimal range for high converting efficiency from solar energy to electric power and also have better optical properties than the Si-I phase. These Si structures with different band gaps could be applied to multiple p-n junction photovoltaic modules. PMID:24971657

  14. A silicon tracker for Christmas

    CERN Multimedia

    2008-01-01

    The CMS experiment installed the world’s largest silicon tracker just before Christmas. Marcello Mannelli: physicist and deputy CMS project leader, and Alan Honma, physicist, compare two generations of tracker: OPAL for the LEP (at the front) and CMS for the LHC (behind). There is quite a difference between 1m2 and 205m2.. CMS received an early Christmas present on 18 December when the silicon tracker was installed in the heart of the CMS magnet. The CMS tracker team couldn’t have hoped for a better present. Carefully wrapped in shiny plastic, the world’s largest silicon tracker arrived at Cessy ready for installation inside the CMS magnet on 18 December. This rounded off the year for CMS with a major event, the crowning touch to ten years of work on the project by over five hundred scientists and engineers. "Building a scientific instrument of this size and complexity is a huge technical a...

  15. The CMS silicon strip tracker

    International Nuclear Information System (INIS)

    The Silicon Strip Tracker (SST) is the intermediate part of the CMS Central Tracker System. SST is based on microstrip silicon devices and in combination with pixel detectors and the Microstrip Gas Chambers aims at performing pattern recognition, track reconstruction and momentum measurements for all tracks with pT≥2 GeV/c originating from high luminosity interactions at √s=14 TeV at LHC. We aim at exploiting the advantages and the physics potential of the precise tracking performance provided by the microstrip silicon detectors on a large scale apparatus and in a much more difficult environment than ever. In this paper we describe the actual SST layout and the readout system. (author)

  16. Silicon Photonics: The Inside Story

    CERN Document Server

    Jalali, Bahram

    2008-01-01

    The electronic chip industry embodies the height of technological sophistication and economics of scale. Fabricating inexpensive photonic components by leveraging this mighty manufacturing infrastructure has fueled intense interest in silicon photonics. If it can be done economically and in an energy efficient manner, empowering silicon with optical functionality will bring optical communications to the realm of computers where limitations of metallic interconnects are threatening the industry's future. The field is making stunning progress and stands to have a bright future, as long as the community recognizes the real challenges, and maintains an open mind with respect to its applications. This talk will review recent 'game changing' developments and discuss promising applications beyond data communication. It will conclude with recent observation of extreme-value statistical behavior in silicon photonics, a powerful example of how scientific discoveries can unexpectedly emerge in the course of technology d...

  17. The LHCb Silicon Tracker Project

    Energy Technology Data Exchange (ETDEWEB)

    Agari, M. [Max Planck Institute for Nuclear Physics (Germany); Bauer, C. [Max Planck Institute for Nuclear Physics (Germany); Baumeister, D. [Max Planck Institute for Nuclear Physics (Germany); Blouw, J. [Max Planck Institute for Nuclear Physics (Germany)]. E-mail: Johan.Blouw@mpi-hd.mpg.de; Hofmann, W. [Max Planck Institute for Nuclear Physics (Germany); Knoepfle, K.T. [Max Planck Institute for Nuclear Physics (Germany); Loechner, S. [Max Planck Institute for Nuclear Physics (Germany); Schmelling, M. [Max Planck Institute for Nuclear Physics (Germany); Pugatch, V. [Kiev Institute for Nuclear Research (Ukraine); Bay, A. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Carron, B. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Frei, R. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Jiminez-Otero, S. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Tran, M.-T. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Voss, H. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Adeva, B. [Universidad de Santiago de Compostela (Spain); Esperante, D. [Universidad de Santiago de Compostela (Spain); Lois, C. [Universidad de Santiago de Compostela (Spain); Vasquez, P. [Universidad de Santiago de Compostela (Spain); Bernhard, R.P. [Physik-Insitut Universitaet Zuerich (Switzerland); Bernet, R. [Physik-Insitut Universitaet Zuerich (Switzerland); Ermoline, Y. [Physik-Insitut Universitaet Zuerich (Switzerland); Gassner, J. [Physik-Insitut Universitaet Zuerich (Switzerland); Koestner, S. [Physik-Insitut Universitaet Zuerich (Switzerland); Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D. [Physik-Insitut Universitaet Zuerich (Switzerland)

    2006-01-15

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry.

  18. The LHCb Silicon Tracker Project

    International Nuclear Information System (INIS)

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

  19. Belle II Silicon Vertex Detector

    CERN Document Server

    Mohanty, Gagan B

    2015-01-01

    The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by a vertex detector, which comprises two layers of pixelated silicon detector and four layers of silicon vertex detector. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector that is aimed to be commissioned towards the middle of 2017.

  20. SILICON REFINING BY VACUUM TREATMENT

    Directory of Open Access Journals (Sweden)

    André Alexandrino Lotto

    2014-12-01

    Full Text Available This work aims to investigate the phosphorus removal by vacuum from metallurgical grade silicon (MGSi (98.5% to 99% Si. Melting experiments were carried out in a vacuum induction furnace, varying parameters such as temperature, time and relation area exposed to the vacuum / volume of molten silicon. The results of chemical analysis were obtained by inductively coupled plasma (ICP, and evaluated based on thermodynamic and kinetic aspects of the reaction of vaporization of the phosphorus in the silicon. The phosphorus was decreased from 33 to approximately 1.5 ppm after three hours of vacuum treatment, concluding that the evaporation step is the controlling step of the process for parameters of temperature, pressure and agitation used and refining by this process is technically feasible.

  1. Radiation curing silicone acrylate systems

    International Nuclear Information System (INIS)

    Radiation curing silicone systems by either ultra violet light (UV) or electron beam (EB) is introduced. The cure is based on the polymerization of the acrylic C = C double bond via a radical chain reaction. In the EB curing process a sufficient number of radicals for spontaneous polymerization is produced due to the high radiation energy whereas with UV light the energy is not as intensive thus a photo-initiator is required for a UV process. The required high local radical concentration provided by its decay. The radical generation immediate chain-growing leads to rapid and efficient crosslinking even at room temperature. It is for this reason that silicone acrylates cure immediately. All coater capable of handling 100% thermally curing silicones are suitable for the use with Goldschmidt's RC systems

  2. 360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals

    Institute of Scientific and Technical Information of China (English)

    YANG Lin-lin; GUO Heng-qun; ZENG You-hua; WANG Qi-ming

    2006-01-01

    Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescence(PL) from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanocrystals was discussed.

  3. Surface texturing of multicrystalline silicon solar cells

    OpenAIRE

    L.A. Dobrzański; A. Drygała

    2008-01-01

    Purpose: The aim of the paper is to elaborate a laser method of texturization multicrystalline silicon. The main reason for taking up the research is that most conventional methods used for texturization of monocrystalline silicon are ineffective when applied for texturing multicrystalline silicon. This is related to random distribution of grains of different crystalographic orientations on the surface of multicrystalline silicon.Design/methodology/approach: The topography of laser ...

  4. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  5. Mid-IR heterogeneous silicon photonics

    OpenAIRE

    Gunther Roelkens; Utsav Dave; Alban Gassenq; Nannicha Hattasan; Chen Hu; Bart Kuyken; Francois Leo; Aditya Malik; Muhammad Muneeb; Eva Ryckeboer; Sarah Uvin; Zeger Hens; Baets, Roel G.; Yosuke Shimura; Federica Gencarelli

    2013-01-01

    In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the integration of III-V semiconductors, IV-VI colloidal nanoparticle films and GeSn alloys on these circuits for increasing the functionality. The strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited t...

  6. Silicon nanocrystal inks, films, and methods

    Energy Technology Data Exchange (ETDEWEB)

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  7. Photo-, electro- and cathodoluminescence of porous silicon

    International Nuclear Information System (INIS)

    The features of photoluminescence and electroluminescence in contact with oxide electrolyte as well as features of cathodoluminescence of porous silicon are investigated. The temporal evolution of electroluminescence of porous silicon is studied. We have also investigated cathodoluminescence from porous silicon at room temperature and the temperature of liquid nitrogen. The experimental results obtained confirm the presence of different radiation centers in porous silicon: with fast and slow kinetics

  8. Deposition and Characterisation of Crystalline Silicon

    OpenAIRE

    Rachow, Thomas

    2014-01-01

    In this thesis, crystalline silicon thin films by atmospheric pressure chemical vapour deposition have been studied. These silicon films can be deposited on silicon wafers or transferred to various substrates for photovoltaic applications. One of the main advantages is the flexibility in thickness and doping concentration which allows the application of the silicon thin films in various solar cell concepts. The combination of these films with an industrial solar cell fabrication process has a...

  9. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.;

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  10. Ultrafast Terahertz Conductivity of Photoexcited Nanocrystalline Silicon

    DEFF Research Database (Denmark)

    Cooke, David; MacDonald, A. Nicole; Hryciw, Aaron;

    2007-01-01

    The ultrafast transient ac conductivity of nanocrystalline silicon films is investigated using time-resolved terahertz spectroscopy. While epitaxial silicon on sapphire exhibits a free carrier Drude response, silicon nanocrystals embedded in glass show a response that is best described by a...... silicon nanocrystal films is dominated by trapping at the Si/SiO2 interface states, occurring on a 1–100 ps time scale depending on particle size and hydrogen passivation...

  11. System and method for liquid silicon containment

    Science.gov (United States)

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  12. Epitaxial Growth of High-Quality Silicon Films on Double-Layer Porous Silicon

    Institute of Scientific and Technical Information of China (English)

    黄宜平; 竺士炀; 李爱珍; 王瑾; 黄靖云; 叶志镇

    2001-01-01

    The epitaxial growth of a high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction,cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.

  13. Silicon sources for rice crop

    Directory of Open Access Journals (Sweden)

    Pereira Hamilton Seron

    2004-01-01

    Full Text Available Although silicon is not an essential nutrient, its application is beneficial for plant growth and development. To evaluate silicon sources in relation to agronomic efficiency and economic viability in rice crops (Oryza sativa L., a greenhouse experiment was conducted, Quartzipsamment soil, in a completely randomized experimental design (n = 4. Treatments were 12 silicon sources and a control. Silicon was applied at the rate of 125 kg Si ha-1. Data were compared to a standard response curve for Si using the standard source Wollastonite at rates of 0, 125, 250, 375, and 500 kg Si ha-1. All treatments received CaCO3 and MgCO3 to balance pH, Ca and Mg. One hundred and fifty days after sowing, evaluations on dry matter yield in the above-ground part of plants, grain yield, and Si contents in the soil and plant tissues were performed. Wollastonite had linear response, increasing silicon in the soil and plants with increasing application rates. Differences between silicon sources in relation to Si uptake were observed. Phosphate slag provided the highest Si uptake, followed by Wollastonite and electric furnace silicates which however, did not show differed among themselves. The highest Si accumulation in grain was observed for stainless steel, which significantly differed from the control, silicate clay, Wollastonite, and AF2 (blast furnace of the company 2 slag. Silicate clay showed the lowest Si accumulation in grain and did not differ from the control, AF2 slag, AF1 slag, schist ash, schist, and LD4 (furnace steel type LD of the company 4 slag.

  14. Laser wafering for silicon solar.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  15. Laser wafering for silicon solar

    International Nuclear Information System (INIS)

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/Wp (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs (∼20%), embodied energy, and green-house gas GHG emissions (∼50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 (micro)m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  16. Silicon nitride for photovoltaic application

    Directory of Open Access Journals (Sweden)

    M. Lipiński

    2010-12-01

    Full Text Available Purpose: of this paper is to present the research results of silicon nitride SiNx films used for industrial silicon solar cells and for third generation solar cells.Design/methodology/approach: The SiNx films were deposited using RF- and LF-PECVD methods. The optical and structural properties were investigated by spectroscopic ellipsometry, XPS, FTIR spectroscopy and X-Ray reflectometry. The passivation properties were investigated by carriers lifetime measurements using a photoconductance decay (PCD technique. For the photovoltaics of third generation the multilayer structures of SiNx were deposited and annealed in order to obtain the silicon quantum superlattices. These structure were characterized by high-resolution TEM, GI-XRD, photoluminescence, Raman and SPV spectroscopy.Findings: It is shown that the layers deposited by LF PECVD have more profitable optical and electrical properties for industrial silicon solar cells than those deposited by RF PECVD. The other finding is that multi-layer structure of SiNx annealed at high temperature shows the properties of the new semiconductor with the gap energy broader then the gap of the silicon.Research limitations/implications: The maximal density of SiNx layers is equal to 2.6 g/cm3. It is too low to obtain high efficiency mc-Si cells. The deposition process should be further optimized. The other limitation is obtaining a regular structure of quantum superlattice composed of quantum dots with defined diameter and density which is a very difficult technological task. This work should be continued in the future.Practical implications: The results of SiNx investigation can be used to increase the efficiency of mc-Si solar cells. The results of multilayer SiNx investigations may be applied to a solar cells based on silicon QDs superlatice.

  17. Silicone breast implants and platinum.

    Science.gov (United States)

    Wixtrom, Roger N

    2007-12-01

    Platinum, in a specific form, is used as a catalyst in the cross-linking reactions of the silicone gel and elastomer in breast implants. After manufacture, it remains in the devices at low-parts-per-million levels. Potential concerns have been raised as to whether this platinum might diffuse from silicone breast implants into the body and result in adverse health effects. The weight of evidence indicates that the platinum present is in its most biocompatible (zero valence) form, and the very minute levels (<0.1 percent) that might diffuse from the implants do not represent a significant health risk to patients. PMID:18090821

  18. Silicon Geiger mode avalanche photodiodes

    Institute of Scientific and Technical Information of China (English)

    M. Mazzillo; S. Billotta; G. Bonanno; A. Campisi; L. Cosentino; P. Finocchiaro; F. Musumeci; S.Privitera; S. Tudisco; G. Condorelli; D. Sanfilippo; G. Fallica; E. Sciacca; S. Aurite; S. Lombardo; E. Rlmini; M. Belluso

    2007-01-01

    In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes (GMAP) fabricated by silicon standard planar technology. Low dark count rates, negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields, as telecommunications and nuclear medical imaging.

  19. Palladium interaction with silicon carbide

    OpenAIRE

    M. Gentile, P. Xiao, T. Abram

    2015-01-01

    In this work the palladium interaction with silicon carbide is investigated by means of complementary analytical techniques such as thermogravimetry (TG), differential scanning calorimetry (DSC), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Thermoscans were carried out on pellets of palladium, α-SiC and β-SiC high purity powders in the temperature range comprised between 293 K and 1773 K, in order to study the effect of temperature on the palladium-silicon carbide...

  20. Extrinsic doping in silicon revisited

    KAUST Repository

    Schwingenschlögl, Udo

    2010-06-17

    Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

  1. Erbium diffusion in silicon dioxide

    International Nuclear Information System (INIS)

    Erbium diffusion in silicon dioxide layers prepared by magnetron sputtering, chemical vapor deposition, and thermal growth has been investigated by secondary ion mass spectrometry, and diffusion coefficients have been extracted from simulations based on Fick's second law of diffusion. Erbium diffusion in magnetron sputtered silicon dioxide from buried erbium distributions has in particular been studied, and in this case a simple Arrhenius law can describe the diffusivity with an activation energy of 5.3±0.1 eV. Within a factor of two, the erbium diffusion coefficients at a given temperature are identical for all investigated matrices.

  2. Microdefects in cast multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, E.; Klinger, D.; Bergmann, S. [Inst. of Crystal Growth Berlin (Germany)

    1995-08-01

    The microdefect etching behavior of cast multicrystalline BAYSIX and SILSO samples is mainly the same as that of EFG silicon, in spite of the very different growth parameters applied to these two techniques and the different carbon contents of the investigated materials. Intentional decorating of mc silicon with copper, iron and gold did not influence the results of etching and with help of infrared transmission microscopy no metal precipitates at the assumed microdefects could be established. There are many open questions concerning the origin of the assumed, not yet doubtless proved microdefects.

  3. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  4. Surgical management of silicone mastitis.

    Science.gov (United States)

    Wustrack, K O; Zarem, H A

    1979-02-01

    The results of the operative treatment of 22 cases of silicone mastitis are presented. Moderate involvement can usually be managed successfully by local excision of the masses, or by a subcutaneous mastectomy with later reconstruction. Patients with severe skin infiltration and/or pectoral muscle involvement are prone to complications, however, and we now believe an aggressive approach--such as a complete mastectomy with nipple banking and excision of the infiltrated muscle, might be best. This would allow the later reconstruction to proceed in relatively uninvolved tissue, and prevent the problems of recurrent inflammation from placing bag-gel prostheses in a residual bed of silicone-infiltrated tissue. PMID:570284

  5. Imprinted silicon-based nanophotonics

    DEFF Research Database (Denmark)

    Borel, Peter Ingo; Olsen, Brian Bilenberg; Frandsen, Lars Hagedorn;

    2007-01-01

    We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern...... definition on a sub 30-nm scale in combination with a deep vertical silicon etch of the order of ~300 nm. The nanoimprint method offers a cost-efficient parallel fabrication process with state-of-the-art replication fidelity, comparable to direct electron beam writing....

  6. Bottom-up approach to silicon nanoelectronics

    OpenAIRE

    Mizumita, Hiroshi; Oda, S

    2005-01-01

    Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/5920) International audience This paper presents a brief review of our recent work investigating a novel bottom-up approach to realize silicon based nanoelectronics. We discuss fabrication technique, electronic properties and device applications of silicon nanodots as a building block for nanoscale silicon devices.

  7. Silicon vertex detector for superheavy elements identification

    Directory of Open Access Journals (Sweden)

    Bednarek A.

    2012-07-01

    Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

  8. Growth model of silicon nanoislands on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Krivulin, N. O., E-mail: krivulin@phys.unn.ru; Pavlov, D. A.; Shilyaev, P. A. [Lobachevsky University of Nizhni Novgorod (Russian Federation)

    2013-12-15

    A growth model of silicon nanoislands on silicon by molecular-beam epitaxy is refined. It is shown that silicon islands grow due to the diffusion of material from the wetting layer, with the contribution from direct hits of atoms to this growth being nearly zero.

  9. 21 CFR 878.4025 - Silicone sheeting.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Silicone sheeting. 878.4025 Section 878.4025 Food... DEVICES GENERAL AND PLASTIC SURGERY DEVICES Surgical Devices § 878.4025 Silicone sheeting. (a) Identification. Silicone sheeting is intended for use in the management of closed...

  10. Silicon carbide as platform for energy applications

    DEFF Research Database (Denmark)

    Syväjärvi, Mikael; Jokubavicius, Valdas; Sun, Jianwu;

    Silicon carbide is emerging as a novel material for a range of energy and environmental technologies. Previously, silicon carbide was considered as a material mainly for transistor applications. We have initiated the use of silicon carbide material towards optoelectronics in general lighting and...

  11. The Silicon-To-Silicon Anodic Bonding Using Sputter Deposited Intermediate Glass Layer

    OpenAIRE

    TIWARI, R; Chandra, S.

    2011-01-01

    Glass-to-silicon anodic bonding is an attractive process for packaging of microelectronics devices and Micro-electro-mechanical Systems (MEMS). Silicon to silicon anodic bonding can also be accomplished by incorporating an intermediate glass layer. In the present work, silicon-to-silicon anodic bonding has been studied with an intermediate borosilicate glass layer deposited by RF magnetron sputtering process. The bonding was carried out at low dc voltage of about 48 V at 400 °C. Surface rough...

  12. Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

    OpenAIRE

    Voz Sánchez, Cristóbal; Martin, I.; Orpella, A.; Puigdollers i González, Joaquim; Vetter, M.; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi

    2003-01-01

    In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the quasi-steady-state photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on n- and p-type float zone silicon wafers. The best results were obtained with amorphous silicon films, which allowed ...

  13. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    The aim of this experiment is to grow a thin silicon layer (2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  14. Ordered silicon nanostructures for silicon-based photonics devices

    Czech Academy of Sciences Publication Activity Database

    Fojtík, A.; Valenta, J.; Pelant, Ivan; Kálal, M.; Fiala, P.

    2007-01-01

    Roč. 5, Suppl. (2007), S250-S253. ISSN 1671-7694 R&D Projects: GA AV ČR IAA1010316 Grant ostatní: GA MŠk(CZ) ME 933 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystals * silicon * self-assembled monolayers Subject RIV: BM - Solid Matter Physics ; Magnetism

  15. Silicon microcantilevers as sensors

    Science.gov (United States)

    Dhayal, Babita

    This work focuses on the general use of microcantilever arrays for parallel detection of multiple analytes and understanding the mechanics behind it. The system employs an array of eight silicon micro cantilevers and has the capability of measuring cantilever deflection due to differential surface stress generated as well as frequency change due to added mass in both gaseous and liquid environments. In this work, we move beyond antibody-antigen binding systems and demonstrate that short peptides ligands can be used to efficiently capture Bacillus subtilis and Bacillus anthracis spores in liquids, given that specific peptides corresponding to the particular bacteria are synthesized. These peptide functionalized cantilever array can be stored under ambient conditions for days without loss of functionality, making then suitable for in-field use. A detailed experimental protocol, optimizing every step is presented. Applications of this technology can serve as a platform for the detection of pathogenic organisms including biowarfare agents. The dominant physical phenomena producing surface-stress during molecular binding are difficult to specify a priori. Differential surface stress generated due to adsorption of small molecules on gold coated cantilevers is measured to gain insight into the mechanisms involved in the self-assembly process and into the origin of associated the surface stress. Our experiments indicate that the contribution from inter-molecular Lennard-Jones interactions and binding energy between the end group and the functionalized surface play a minimal role in the development of surface stress. Electrostatic repulsion between adsorbed species stress and Changes in the electronic structure of the underlying gold substrate play an important role in surface stress generation. To achieve higher sensitivity in the performance of cantilever sensors, optimized cantilevers of different dimensions are required. By adjusting cantilever dimensions, it is

  16. Chemical vapour etching of silicon and porous silicon: silicon solar cells and micromachining applications

    Energy Technology Data Exchange (ETDEWEB)

    Ben Jaballah, A.; Hassen, M.; Hajji, M.; Saadoun, M.; Bessais, B.; Ezzaouia, H. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Materiaux Semiconducteurs, PB 95 2050 Hammam lif (Tunisia)

    2005-06-01

    In this work, we used HNO{sub 3}/HF Vapour Etching (VE) of silicon (Si) wafers for the formation of different porous structures. Depending on the volume ratio of the HNO{sub 3}/HF acid mixture, we can obtain Porous Silicon (PS) layers or a (NH{sub 4}){sub 2}SiF{sub 6} like powder phase. These two kind of porous structures may be used in silicon solar cells and in micromachining applications. The VE technique allows producing thick porous layers (>100 {mu}m) in short times. Simple masking films enable to selectively groove Si wafers, leading to the formation of holes and channels of different sizes suitable for their application in micromachining. The various grooving profiles were investigated by Scanning electron microscopy (SEM). (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Intermediate Bandgap Solar Cells From Nanostructured Silicon

    Energy Technology Data Exchange (ETDEWEB)

    Black, Marcie [Bandgap Engineering, Lincoln, MA (United States)

    2014-10-30

    This project aimed to demonstrate increased electronic coupling in silicon nanostructures relative to bulk silicon for the purpose of making high efficiency intermediate bandgap solar cells using silicon. To this end, we formed nanowires with controlled crystallographic orientation, small diameter, <111> sidewall faceting, and passivated surfaces to modify the electronic band structure in silicon by breaking down the symmetry of the crystal lattice. We grew and tested these silicon nanowires with <110>-growth axes, which is an orientation that should produce the coupling enhancement.

  18. Diamond deposition on siliconized stainless steel

    International Nuclear Information System (INIS)

    Silicon diffusion layers in AISI 304 and AISI 316 type stainless steels were investigated as an alternative to surface barrier coatings for diamond film growth. Uniform 2 μm thick silicon rich interlayers were obtained by coating the surface of the steels with silicon and performing diffusion treatments at 800 deg. C. Adherent diamond films with low sp2 carbon content were deposited on the diffused silicon layers by a modified hot filament assisted chemical vapor deposition (HFCVD) method. Characterization of as-siliconized layers and diamond coatings was performed by energy dispersive X-ray analysis, scanning electron microscopy, X-ray diffraction and Raman spectroscopy.

  19. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  20. Silicon-based nanochannel glucose sensor

    CERN Document Server

    Wang, Xihua; Gibney, Katherine A; Erramilli, Shyamsunder; Mohanty, Pritiraj

    2008-01-01

    Silicon nanochannel biological field effect transistors have been developed for glucose detection. The device is nanofabricated from a silicon-on-insulator wafer with a top-down approach and surface functionalized with glucose oxidase. The differential conductance of silicon nanowires, tuned with source-drain bias voltage, is demonstrated to be sensitive to the biocatalyzed oxidation of glucose. The glucose biosensor response is linear in the 0.5-8 mM concentration range with 3-5 min response time. This silicon nanochannel-based glucose biosensor technology offers the possibility of high density, high quality glucose biosensor integration with silicon-based circuitry.

  1. Methods for producing silicon carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  2. Hybrid Integrated Platforms for Silicon Photonics

    Directory of Open Access Journals (Sweden)

    John E. Bowers

    2010-03-01

    Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  3. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  4. Method For Producing Mechanically Flexible Silicon Substrate

    KAUST Repository

    Hussain, Muhammad Mustafa

    2014-08-28

    A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.

  5. Solar silicon refining; Inclusions, settling, filtration, wetting

    OpenAIRE

    Ciftja, Arjan

    2009-01-01

    The main objective of the present work is the removal of inclusions from silicon scrap and metallurgical grade silicon. To reach this goal, two various routes are investigated. First, settling of SiC particles from molten silicon followed by directional solidification is reported in this thesis. Then, removal of SiC and Si3N4 inclusions in silicon scrap by filtration with foam filters and wettabilities of silicon on graphite materials are studied.To supply the increasing needs of the photovol...

  6. The CDF Silicon Vertex Detector

    International Nuclear Information System (INIS)

    A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the

  7. The ruthenium-silicon system

    International Nuclear Information System (INIS)

    The ruthenium-silicon system has been completely revised using differential thermal analysis, X-ray diffraction and electron microprobe investigations. The two equiatomic compound structures (CsCl and FeSi types) have been identified as two different phases. The occurrence of Ru5Si3 was not confirmed. (orig.)

  8. Reciprocating Saw for Silicon Wafers

    Science.gov (United States)

    Morrison, A. D.; Collins, E. R., Jr.

    1985-01-01

    Concept increases productivity and wafer quality. Cutting wafers from silicon ingots produces smooth wafers at high rates with reduced blade wear. Involves straight reciprocating saw blade and slight rotation of ingot between cutting strokes. Many parallel blades combined to cut many wafers simultaneously from ingot.

  9. Neutron irradiation effect of silicon

    International Nuclear Information System (INIS)

    Several kinds of silicon wafers were irradiated at four neutron fields with different energy spectra. Electrical resistivity and deep level defect concentrations after the neutron irradiation, and their changes against number of displacement atoms (DPA's) for different neutron fields were compared. The number of DPA's was calculated by N. Yamano's data. (author)

  10. Strain in silicon nanowire beams

    Science.gov (United States)

    Ureña, Ferran; Olsen, Sarah H.; Šiller, Lidija; Bhaskar, Umesh; Pardoen, Thomas; Raskin, Jean-Pierre

    2012-12-01

    In this work, strain in silicon free standing beams loaded in uniaxial tension is experimentally and theoretically investigated for strain values ranging from 0 to 3.6%. The fabrication method allows multiple geometries (and thus strain values) to be processed simultaneously on the same wafer while being studied independently. An excellent agreement of strain determined by two non-destructive characterization techniques, Raman spectroscopy and mechanical displacement using scanning electron microscopy (SEM) markers, is found for all the sample lengths and widths. The measured data also show good agreement with theoretical predictions of strain based upon continuum mechanical considerations, giving validity to both measurement techniques for the entire range of strain values. The dependence of Young's modulus and fracture strain on size has also been analyzed. The Young's modulus is determined using SEM and compared with that obtained by resonance-based methods. Both methods produced a Young's modulus value close to that of bulk silicon with values obtained by resonance-based methods being slightly lower. Fracture strain is analyzed in 40 sets of samples with different beam geometries, yielding values up to 3.6%. The increase in fracture strain with decreasing beam width is compared with previous reports. Finally, the role of the surface on the mechanical properties is analyzed using UV and visible lasers having different penetration depths in silicon. The observed dependence of Raman shift on laser wavelength is used to assess the thermal conductivity of deformed silicon.

  11. Microelectromechanical pump utilizing porous silicon

    Science.gov (United States)

    Lantz, Jeffrey W.; Stalford, Harold L.

    2011-07-19

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  12. The Future of Silicon Valley

    Institute of Scientific and Technical Information of China (English)

    Joseph Leu

    2006-01-01

    @@ By the end of 1984, Silicon Valley was going through the down cycle fol lowing the PC boom. A hundred PC companies wanted just 10 percent of the market, wanting to strike it rich, as rich as the Apple IPO (Initial Public Of fering) -the Google celebrity IPO of its day.

  13. Iron contamination in silicon technology

    Science.gov (United States)

    Istratov, A. A.; Hieslmair, H.; Weber, E. R.

    This article continues the review of fundamental physical properties of iron and its complexes in silicon (Appl. Phys. A 69, 13 (1999)), and is focused on ongoing applied research of iron in silicon technology. The first section of this article presents an analysis of the effect of iron on devices, including integrated circuits, power devices, and solar cells. Then, sources of unintentional iron contamination and reaction paths of iron during device manufacturing are discussed. Experimental techniques to measure trace contamination levels of iron in silicon, such as minority carrier lifetime techniques (SPV, μ-PCD, and ELYMAT), deep-level transient spectroscopy (DLTS), total X-ray fluorescence (TXRF) and vapor-phase decomposition TXRF (VPD-TXRF), atomic absorption spectroscopy (AAS), mass spectrometry and its modifications (SIMS, SNMS, ICP-MS), and neutron activation analysis (NAA) are reviewed in the second section of the article. Prospective analytical tools, such as heavy-ion backscattering spectroscopy (HIBS) and synchrotron-based X-ray microprobe techniques (XPS, XANES, XRF) are briefly discussed. The third section includes a discussion of the present achievements and challenges of the electrochemistry and physics of cleaning of silicon wafers, with an emphasis on removal of iron contamination from the wafers. Finally, the techniques for gettering of iron are presented.

  14. Applications of passivated silicon detectors

    Science.gov (United States)

    Kyung, Richard; Park, Chan Ho

    2012-03-01

    We can postulate that dark matter are WIMPS, more specifically, Majorana particles called neutralinos floating through space. Upon neutralino-neutralino annihilation, they create a greater burst of other particles into space: these being all kinds of particles including anti-deuterons which are the indications of the existence of dark matter. For the study of the applications of passivated silicon detectors, this paper shows following procedures in two categories. Painting on little pieces of silicon (Polyimid and Boxcar Red) :Took clean paint brush and painted on Polyimid and Boxcar red samples onto little pieces of sample silicon and dried for a certain number of hours in different conditions. Cooling test : usually done in 7 cycles, cool until usually -35 degrees or -40 degrees Celsius with thermoelectric cooler, dry out, evapate the moisture in the fume hood, take pictures with the microscope and check for irregularities every 1, 4 and 7 times. The results show us how the passivated silicon will act in the real experiment--the vacuum chamber and x-rays (from the radioactive source), and different atmospheric pressures simulate what it will be like in space.

  15. Mesoporous Silicon-Based Anodes

    Science.gov (United States)

    Peramunage, Dharmasena

    2015-01-01

    For high-capacity, high-performance lithium-ion batteries. A new high-capacity anode composite based on mesoporous silicon is being developed. With a structure that resembles a pseudo one-dimensional phase, the active anode material will accommodate significant volume changes expected upon alloying and dealloying with lithium (Li).

  16. Behavior of dislocations in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sumino, Koji [Nippon Steel Corp., Chiba Prefecture (Japan)

    1995-08-01

    A review is given of dynamic behavior of dislocations in silicon on the basis of works of the author`s group. Topics taken up are generation, motion and multiplication of dislocations as affected by oxygen impurities and immobilization of dislocations due to impurity reaction.

  17. Photoactivation of silicon quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Lockwood, R., E-mail: rossl@ualberta.c [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada); McFarlane, S. [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada); Rodriguez Nunez, J.R. [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada); Wang, X.Y. [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada); Veinot, J.G.C. [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada); Meldrum, A. [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada)

    2011-07-15

    We show that free-standing silicon quantum dots (QDs) can be photoactivated by blue or UV optical irradiation. The luminescence intensity increases by an order of magnitude for irradiation times of several minutes under moderate optical power. The cut-off energy for photoactivation is between 2.1 and 2.4 eV, not very different from the activation energy for hydrogen dissociation from bulk silicon surfaces. We propose the mechanism for this effect is associated with silicon-hydride bond breaking and the subsequent oxidation of dangling bonds. This phenomenon could be used to 'write' luminescent quantum dots into pre-determined arrays. - Research highlights: {yields}Laser light causes increased photoluminescence intensity in silicon quantum dots. {yields} The photoactivation process is effective for wavelengths of 514 nm and shorter. {yields} Hydrogen bound to the Si-QDs is replaced by oxygen in a two-step process. {yields} Patterning is possible but limited by physical dispersion of Si-QDs.

  18. Raman scattering in silicon nanostructures

    Czech Academy of Sciences Publication Activity Database

    Champagnon, B.; Gregora, Ivan; Monin, Y.; Duval, E.; Saviot, L.

    Les Vlis : Springer Edition de Physique, 1995 - (Vial, J.; Derrien, J.), s. 247-253 - (3-540-58936-8). [Winter School: Porous Silicon Science and Technology. Les Houches (FR), 08.02.1994-12.02.1994] R&D Projects: GA AV ČR IAA110426

  19. Vacuum Refining of Molten Silicon

    Science.gov (United States)

    Safarian, Jafar; Tangstad, Merete

    2012-12-01

    Metallurgical fundamentals for vacuum refining of molten silicon and the behavior of different impurities in this process are studied. A novel mass transfer model for the removal of volatile impurities from silicon in vacuum induction refining is developed. The boundary conditions for vacuum refining system—the equilibrium partial pressures of the dissolved elements and their actual partial pressures under vacuum—are determined through thermodynamic and kinetic approaches. It is indicated that the vacuum removal kinetics of the impurities is different, and it is controlled by one, two, or all the three subsequent reaction mechanisms—mass transfer in a melt boundary layer, chemical evaporation on the melt surface, and mass transfer in the gas phase. Vacuum refining experimental results of this study and literature data are used to study the model validation. The model provides reliable results and shows correlation with the experimental data for many volatile elements. Kinetics of phosphorus removal, which is an important impurity in the production of solar grade silicon, is properly predicted by the model, and it is observed that phosphorus elimination from silicon is significantly increased with increasing process temperature.

  20. Untreated silicone breast implant rupture

    DEFF Research Database (Denmark)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten;

    2004-01-01

    Implant rupture is a well-known complication of breast implant surgery that can pass unnoticed by both patient and physician. To date, no prospective study has addressed the possible health implications of silicone breast implant rupture. The aim of the present study was to evaluate whether untre...

  1. Impurities of oxygen in silicon

    International Nuclear Information System (INIS)

    The electronic structure of oxygen complex defects in silicon, using molecular cluster model with saturation by watson sphere into the formalism of Xα multiple scattering method is studied. A systematic study of the simulation of perfect silicon crystal and an analysis of the increasing of atom number in the clusters are done to choose the suitable cluster for the calculations. The divacancy in three charge states (Si:V2+, Si:V20, Si:V2-), of the oxygen pair (Si:O2) and the oxygen-vacancy pair (Si:O.V) neighbours in the silicon lattice, is studied. Distortions for the symmetry were included in the Si:V2+ and Si:O2 systems. The behavior of defect levels related to the cluster size of Si:V20 and Si:O2 systems, the insulated oxygen impurity of silicon in interstitial position (Si:Oi), and the complexes involving four oxygen atoms are analysed. (M.C.K.)

  2. Oxidation resistance of silicon ceramics

    Science.gov (United States)

    Yasutoshi, H.; Hirota, K.

    1984-01-01

    Oxidation resistance, and examples of oxidation of SiC, Si3N4 and sialon are reviewed. A description is given of the oxidation mechanism, including the oxidation product, oxidation reaction and the bubble size. The oxidation reactions are represented graphically. An assessment is made of the oxidation process, and an oxidation example of silicon ceramics is given.

  3. Silicon single-electron devices

    International Nuclear Information System (INIS)

    Single-electron devices (SEDs) are attracting a lot of attention because of their capability of manipulating just one electron. For their operation, they utilize the Coulomb blockade (CB), which occurs in tiny structures made from conductive material due to the electrostatic interactions of confined electrons. Metals or III-V compound semiconductors have so far been used to investigate the CB and related phenomena from the physical point of view. However, silicon is preferable from the viewpoint of applications to integrated circuits because, on a silicon substrate, SEDs can be used in combination with conventional complementary metal-oxide-semiconductor (CMOS) circuits. In addition, the well established fabrication technologies for CMOS large-scale integrated circuits (LSIs) can be applied to making such small structures. LSI applications of the silicon SEDs can be categorized into two fields: memory and logic. Many kinds of device structure and fabrication process have been proposed and tested for these purposes. This paper introduces the current status of silicon-based SED studies for LSI applications. (author)

  4. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  5. High purity silane and silicon production

    Science.gov (United States)

    Breneman, William C. (Inventor)

    1987-01-01

    Silicon tetrachloride, hydrogen and metallurgical silicon are reacted at about 400.degree.-600.degree. C. and at pressures in excess of 100 psi, and specifically from about 300 up to about 600 psi to form di- and trichlorosilane that is subjected to disproportionation in the presence of an anion exchange resin to form high purity silane. By-product and unreacted materials are recycled, with metallurgical silicon and hydrogen being essentially the only consumed feed materials. The silane product may be further purified, as by means of activated carbon or cryogenic distillation, and decomposed in a fluid bed or free space reactor to form high purity polycrystalline silicon and by-product hydrogen which can be recycled for further use. The process results in simplified waste disposal operations and enhances the overall conversion of metallurgical grade silicon to silane and high purity silicon for solar cell and semiconductor silicon applications.

  6. Physiological removal of silicon from bioactive glass

    Energy Technology Data Exchange (ETDEWEB)

    Lai, W. [Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Bioengineering; Garino, J. [Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Orthopaedic Surgery; Flaitz, C.M. [Texas Univ., Houston, TX (United States). Div. of Oral and Maxillofacial Pathology; Ducheyne, P. [Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Bioengineering; Pennsylvania Univ., Philadelphia, PA (United States). Dept. of Orthopaedic Surgery

    2001-07-01

    Bioactive glass granules were implanted in the paraspinal muscle and tibiae of rabbits in order to determine the pathway of the silicon released from bioactive glass in vivo. We traced and quantified the silicon released by obtaining 24-hour urine samples, as well as blood samples for up to 7 months after implantation. Furthermore, local muscle and bone tissue as well as the following organs were resected for chemical and histopathological analyses: brain, heart, kidney, liver, lung, lymph nodes, spleen, and thymus. The concentrations of silicon found in the urine were well below saturation and no accumulation of silicon was found in the major organs after silicon excretion had halted. The removal of silicon from the body matrix was slower overall compared to an intramuscular site, taking a total of 24 weeks versus 19 weeks to complete silicon removal, respectively. (orig.)

  7. Cryostable lightweight frit bonded silicon mirror

    Science.gov (United States)

    Anthony, F.; McCarter, D.; Tangedahl, M.; Content, D.

    The excellent polishability, low density and relatively high stiffness of silicon make it an attractive candidate for optical applications that require superior performance. Assembly of silicon details by means of glass frit bonding permits significant light weighting thus enhancing the benefit of silicon mirrors. To demonstrate the performance potential, a small lightweight glass frit bonded silicon mirror was fabricated and tested for cryoability. The test mirror was 12.5cm in diameter with a 60cm spherical radius and a maximum thickness, at the perimeter, of 2.5cm. A machined silicon core was used to stiffen the two face sheets of the silicon sandwich. These three elements were assembled, by glass frit bonding, to form the substrate that was polished. The experimental evaluation in a liquid nitrogen cryostat, demonstrated cryostability performance significantly better than required by the mirror specification. Key WordsCryostable, Lightweight, Silicon, Frit Bond, Spherical, Mirror

  8. Gamma radiation effects on silicon photonic waveguides.

    Science.gov (United States)

    Grillanda, Stefano; Singh, Vivek; Raghunathan, Vivek; Morichetti, Francesco; Melloni, Andrea; Kimerling, Lionel; Agarwal, Anuradha M

    2016-07-01

    To support the use of integrated photonics in harsh environments, such as outer space, the hardness threshold to high-energy radiation must be established. Here, we investigate the effects of gamma (γ) rays, with energy in the MeV-range, on silicon photonic waveguides. By irradiation of high-quality factor amorphous silicon core resonators, we measure the impact of γ rays on the materials incorporated in our waveguide system, namely amorphous silicon, silicon dioxide, and polymer. While we show the robustness of amorphous silicon and silicon dioxide up to an absorbed dose of 15 Mrad, more than 100× higher than previous reports on crystalline silicon, polymer materials exhibit changes with doses as low as 1 Mrad. PMID:27367099

  9. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  10. Aluminum gettering in single and multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    McHugo, S.A.; Hieslmair, H.; Weber, E.R. [Univ. of California, Berkeley, CA (United States)

    1995-08-01

    Al gettering has been performed on integrated circuit (I.C.) quality silicon and a variety of single and multicrystalline silicon solar cell materials. The minority carrier diffusion length, Ln, has been used to quantify the gettering response. Vast differences in response to the Al gettering treatment are observed between the I.C. quality silicon and the solar cell materials. The I.C. silicon generally responds well while the solar cell silicon performance progressively degrades with increasing gettering temperature. Preliminary data shows that by performing a Rapid Thermal Annealing treatment prior to the Al gettering, an improved or further degraded Ln emerges in solar cell material depending on the material`s manufacturer. We explain these observed phenomena by suggesting that Al gettering in solar cell silicon is an impurity emission-limited process while for I.C. quality silicon it is diffusion limited.

  11. Tunable silicon CROW delay lines

    Science.gov (United States)

    Morichetti, Francesco; Canciamilla, Antonio; Torregiani, Matteo; Ferrari, Carlo; Melloni, Andrea; Martinelli, Mario

    2010-05-01

    Tunable coupled resonator optical waveguides (CROWs) are powerful and versatile devices that can be used to dynamically control the delay of optical data streams on chip. In this contribution we show that CROW delay lines fabricated on a silicon on insulator (SOI) platform are suitable for applications in the emerging scenario of optical systems at 100 Gbit/s. Issues concerning technology, design, limits and applications of SOI CROWs are discussed. The performances of silicon CROW delay lines activated by thermal tuning are compared to those of glass CROW in terms of power consumption, thermal crosstalk and reconfiguration speed. The continuous delay of 10-ps long optical pulses by 8 bit length is demonstrated by using a silicon CROW with a bandwidth of 87 GHz and made of 12 RRs. At 100 Gbit/s this structure provides comparable figures of merit (fractional delay of 0.75 bit/RR and fractional loss of 0.7 dB per bit-delay) of state-of-the art glass CROW operating at 10 Gbit/s, yet the area of the latter being three order of magnitude larger. The compatibility of silicon CROW with the emerging 100 Gbit/s systems is demonstrated by showing error-free phase-preserving propagation of a 100 Gbit/s return-to-zero (RZ) polarization-division-multiplexing (PolDM) differential quaternary phase shit keying (DQPSK) signal dynamically delayed by the CROW. It is also demonstrated that a silicon CROW can be used in a PolDM system to introduce a polarization selective delay in order to optimize the time interleaving of the two orthogonally polarized data streams.

  12. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  13. Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer

    OpenAIRE

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; KONAGAI, MAKOTO

    2014-01-01

    The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is po...

  14. D0 Silicon Upgrade: D0 Silicon Cooling System

    International Nuclear Information System (INIS)

    The cooling system design is not complete. This paper lays out the general design and some of the design calculations that have been performed up to this date. Further refinement will be performed. This is especially true in the piping layout, piping insulation and detector manifold areas. The silicon detector is cooled by means of a coolant in the beryllium channels that also act as the primary supporting device for the silicon ladders and wedges. The coolant is water with ethylene glycol added as a freezing point depressant. The glycol concentration in the coolant is 30% by weight resulting in a freezing point of approximately -15 C. If the water/glycol is not sufficient for maintaining the desired detector temperature the concentration of the water/glycol may be changed or an alternative coolant may be used.

  15. Debug automation from pre-silicon to post-silicon

    CERN Document Server

    Dehbashi, Mehdi

    2015-01-01

    This book describes automated debugging approaches for the bugs and the faults which appear in different abstraction levels of a hardware system. The authors employ a transaction-based debug approach to systems at the transaction-level, asserting the correct relation of transactions. The automated debug approach for design bugs finds the potential fault candidates at RTL and gate-level of a circuit. Debug techniques for logic bugs and synchronization bugs are demonstrated, enabling readers to localize the most difficult bugs. Debug automation for electrical faults (delay faults)finds the potentially failing speedpaths in a circuit at gate-level. The various debug approaches described achieve high diagnosis accuracy and reduce the debugging time, shortening the IC development cycle and increasing the productivity of designers. Describes a unified framework for debug automation used at both pre-silicon and post-silicon stages; Provides approaches for debug automation of a hardware system at different levels of ...

  16. A review of oxide, silicon nitride, and silicon carbide brazing

    International Nuclear Information System (INIS)

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed

  17. Fabrication of silicon nitride-silicon carbide nanocomposite ceramics

    International Nuclear Information System (INIS)

    Silicon nitride-silicon carbide nanocomposites have so far been fabricated by hot-pressing fine amorphous Si-C-N powder produced by CVD. This composite exhibited excellent strength and fracture toughness and maintained high strength to temperatures above 1200 C. The current work deals with the fabrication of nanocomposites produced using mixtures of Si3N4 and nanosize SiC powders. Conventional processing techniques were used to optimise the dispersion of the SiC particles. Densification was achieved by pressureless sintering, gas pressure sintering and sinter/HIPping. Mechanical properties such as hardness, fracture toughness and strength at room temperature were assessed. The nanocomposites produced were compared with composites produced using alternative starting materials. (orig.)

  18. Silicon carbide nanowires synthesized with phenolic resin and silicon powders

    Science.gov (United States)

    Zhao, Hongsheng; Shi, Limin; Li, Ziqiang; Tang, Chunhe

    2009-02-01

    Large-scale silicon carbide nanowires with the lengths up to several millimeters were synthesized by a coat-mix, moulding, carbonization, and high-temperature sintering process, using silicon powder and phenolic resin as the starting materials. Ordinary SiC nanowires, bamboo-like SiC nanowires, and spindle SiC nanochains are found in the fabricated samples. The ordinary SiC nanowire is a single-crystal SiC phase with a fringe spacing of 0.252 nm along the [1 1 1] growth direction. Both of the bamboo-like SiC nanowires and spindle SiC nanochains exhibit uniform periodic structures. The bamboo-like SiC nanowires consist of amorphous stem and single-crystal knots, while the spindle SiC nanochains consist of uniform spindles which grow uniformly on the entire nanowires.

  19. Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

    1998-01-01

    Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

  20. Microstructural characterisation of silicon nitride-bonded silicon carbide

    International Nuclear Information System (INIS)

    The microstructure of a commercial silicon nitride-bonded silicon carbide ceramic composite, formed via the nitridation of Si powder-SiC preforms, has been characterised by transmission electron microscopy. A mechanism combining reaction bonding and liquid-phase sintering is proposed to describe the development and observed morphology of the microstructure of the bonding matrix, which comprises predominantly phases based on Si2N2O and β-Si3N4 and an amorphous phase. Qualitative microanalysis of amorphous matrix regions has revealed significant concentrations of oxygen, aluminium and calcium, with Al also being detected in both of the surrounding cyrstalline phases. It is thus suggested that the principal constituents of the matrix are in fact O' and β' sialons. (orig.)