Europium-doped amorphous calcium phosphate porous nanospheres: preparation and application as luminescent drug carriers

Directory of Open Access Journals (Sweden)

Zhang Kui-Hua

2011-01-01

Full Text Available Abstract Calcium phosphate is the most important inorganic constituent of biological tissues, and synthetic calcium phosphate has been widely used as biomaterials. In this study, a facile method has been developed for the fabrication of amorphous calcium phosphate (ACP/polylactide-block-monomethoxy(polyethyleneglycol hybrid nanoparticles and ACP porous nanospheres. Europium-doping is performed to enable photoluminescence (PL function of ACP porous nanospheres. A high specific surface area of the europium-doped ACP (Eu3+:ACP porous nanospheres is achieved (126.7 m2/g. PL properties of Eu3+:ACP porous nanospheres are investigated, and the most intense peak at 612 nm is observed at 5 mol% Eu3+ doping. In vitro cytotoxicity experiments indicate that the as-prepared Eu3+:ACP porous nanospheres are biocompatible. In vitro drug release experiments indicate that the ibuprofen-loaded Eu3+:ACP porous nanospheres show a slow and sustained drug release in simulated body fluid. We have found that the cumulative amount of released drug has a linear relationship with the natural logarithm of release time (ln(t. The Eu3+:ACP porous nanospheres are bioactive, and can transform to hydroxyapatite during drug release. The PL properties of drug-loaded nanocarriers before and after drug release are also investigated.

Improved charge collection of the buried p-i-n a-Si:H radiation detectors

International Nuclear Information System (INIS)

Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.

1989-09-01

Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

Recyclable UV and visible light photocatalytically active amorphous TiO2 doped with M (III) ions (M = Cr and Fe)

International Nuclear Information System (INIS)

Buddee, Supat; Wongnawa, Sumpun; Sirimahachai, Uraiwan; Puetpaibool, Walailak

2011-01-01

Research highlights: → The low photocatalytic activity of amorphous TiO2 was enhanced by doping with Cr(III) or Fe(III) ions. → The doped catalysts performed close to P25 under UV light and better with visible light. → The doped catalysts can be recycled. - Abstract: Samples of amorphous TiO 2 doped with Cr(III) and Fe(III), designated as Cr-TiO 2 and Fe-TiO 2 , were prepared via modified impregnation method. The resulting products were characterized by X-ray diffraction, scanning electron microscopy, specific surface area by the Brunauer, Emmett and Teller method, UV-vis absorption and diffuse reflectance spectroscopy, and electron spin resonance spectroscopy. Experimental results revealed that the concentrations of dopants under studied, from 0.05 to 0.2 mol%, had no effect on the phase of products. The band gap energies shifted from 3.28 eV in the undoped amorphous TiO 2 to 2.50 eV and 2.86 eV for Fe-TiO 2 and Cr-TiO 2 , respectively. The doped amorphous TiO 2 showed photocatalytic activities under both UV and visible light with optimal results at 0.1 mol% dopants. Under UV irradiation, the 0.1 mol% doped samples decolorized methylene blue solutions to the same extent as the commercial TiO 2 samples (P25 and anatase) in 5 h. Under visible light, the doped samples decolorized dye solutions in 12 h while the commercial ones were much less active. The used catalysts can be recycled many times without any special treatment.

Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

International Nuclear Information System (INIS)

Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

2006-01-01

We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

Energy Technology Data Exchange (ETDEWEB)

Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

2013-12-02

In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

International Nuclear Information System (INIS)

Moreno, M.; Delgadillo, N.; Torres, A.; Ambrosio, R.; Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W.

2013-01-01

In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E a ) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ RT ), E a and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E a , TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors

Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

International Nuclear Information System (INIS)

Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook

2002-01-01

In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction

Doping of GaN{sub 1-x}As{sub x} with high As content

Energy Technology Data Exchange (ETDEWEB)

Levander, A.X.; Novikov, S.V.; Liliental-Weber, Z.; dos Reis, R.; Dubon, O.D.; Wu, J.; Foxon, C.T.; Yu, K.M.; Walukiewicz, W.

2011-09-22

Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of the electrical properties through doping is critical for functionalizing this material. Here we report the bipolar doping of GaN{sub 1-x}As{sub x} with high As content to conductivities above 4 S/cm at room temperature using Mg or Te. The carrier type was confirmed by thermopower measurements. Doping requires an increase in Ga flux during growth resulting in a mixed phase material of polycrystalline GaAs:N embedded in amorphous GaN{sub 1-x}As{sub x}.

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Gusev, Oleg; Bresler, Mikhail; Kuznetsov, Alexey; Kudoyarova, Vera; Pak, Petr; Terukov, Evgenii; Tsendin, Konstantin; Yassievich, Irina [A F Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Fuhs, Walther [Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin (Germany); Weiser, Gerhard [Phillips-Universitat Marburg, Fachbereich Physik, D-35032 Marburg (Germany)

1998-05-11

We have observed room-temperature erbium-ion electroluminescence in erbium-doped amorphous silicon. Electrical conduction through the structure is controlled by thermally activated ionization of deep D{sup -} defects in an electric field and the reverse process of capture of mobile electrons by D{sup 0} states. Defect-related Auger excitation (DRAE) is responsible for excitation of erbium ions located close to dangling-bond defects. Our experimental data are consistent with the mechanisms proposed

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

International Nuclear Information System (INIS)

Drera, G.; Mozzati, M.C.; Colombi, P.; Salvinelli, G.; Pagliara, S.; Visentin, D.; Sangaletti, L.

2015-01-01

Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al 2 O 3 substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al 2 O 3 substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

Energy Technology Data Exchange (ETDEWEB)

Drera, G. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Mozzati, M.C. [CNISM, Dipartimento di Fisica, Università di Pavia, Via Bassi 6, 27100 Pavia (Italy); Colombi, P. [CSMT Gestione s.c.a.r.l, Via Branze 45, 25123 Brescia (Italy); Salvinelli, G.; Pagliara, S.; Visentin, D. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Sangaletti, L., E-mail: sangalet@dmf.unicatt.it [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy)

2015-09-01

Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al{sub 2}O{sub 3} substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al{sub 2}O{sub 3} substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions.

Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films

International Nuclear Information System (INIS)

Tran, N.T.; Epstein, K.A.; Grimmer, D.P.; Vernstrom, G.D.

1987-01-01

Effect of the low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) were studied. Doping level of both boron and phosphorus was in the range of 10/sup 17/ atoms/cm/sup 3/. Apparent improvement in the stability of dark and photoconductivity of a-Si: films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level

Pseudocapacitance of amorphous TiO2@nitrogen doped graphene composite for high rate lithium storage

International Nuclear Information System (INIS)

Li, Sheng; Xue, Pan; Lai, Chao; Qiu, Jingxia; Ling, Min; Zhang, Shanqing

2015-01-01

The high rate applications such as electric vehicles of the traditional lithium ion batteries (LIBs) are commonly limited by their insufficient electron conductivity and slow mass transport of lithium ions in bulk electrode materials. In order to address these issues, in this work, a simple and up-scalable wet-mechanochemical (wet-ball milling) route has been developed for fabrication of amorphous porous TiO 2 @nitrogen doped graphene (TiO 2 @N-G) nanocomposites. The amorphous phase, unique porous structure of TiO 2 and the surface defects from nitrogen doping to graphene planes have incurred surface controlled reactions, contributing pseudocapacitance to the total capacity of the battery. It plays a dominant role in producing outstanding high rate electrochemical performance, e.g., 182.7 mAh/g (at 3.36 A/g) after 100 cycles. The design and synthesis of electrode materials with enhanced conductivity and surface pseudocapacitance can be a promising way for high rate LIBs.

Effect of metal doping on structural characteristics of amorphous carbon system: A first-principles study

Energy Technology Data Exchange (ETDEWEB)

Li, Xiaowei; Zhang, Dong [Key Laboratory of Marine Materials and Related Technologies, Key Laboratory of Marine Materials and Protective Technologies of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Lee, Kwang-Ryeol, E-mail: krlee@kist.re.kr [Computational Science Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Wang, Aiying, E-mail: aywang@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Key Laboratory of Marine Materials and Protective Technologies of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

2016-05-31

First-principles calculation was performed to investigate the effect of metal doping on the structural characteristics of amorphous carbon system, and the 3d transition metals (TM) were particularly selected as representative case. Results showed that the total energy in TM–C systems caused by distorting the bond angles was reduced distinctly for comparison with that in C–C system. Further electronic structure revealed that as the 3d electrons of doped TM increased, the bond characteristic of highest occupied molecular orbital changed from bonding (Sc, Ti) to nonbonding (V, Cr, Mn, Fe) and finally to antibonding (Co, Ni, Cu) between the TM and C atoms. Meanwhile, the TM–C bond presented a mixture of the covalent and ionic characters. The decrease of strength and directionality of TM–C bonds resulted in the total energy change upon bond angle distortion, which demonstrated that the bond characteristics played an important role in reducing residual stress of TM-doped amorphous carbon systems. - Highlights: • The bond characteristics as 3d electrons changed from bonding, nonbonding to antibonding. • The TM–C bond was a mixture of covalent and ionic characters. • Reduced strength and directionality of TM–C bond led to small distortion energy change. • The weak TM–C bond accounted for the reduced compressive stress caused by TM.

Ion-induced damage and amorphization in Si

International Nuclear Information System (INIS)

Holland, O.W.; White, C.W.

1990-01-01

Ion-induced damage growth in high-energy, self-ion irradiated Si was studied using electron microscopy and Rutherford backscattering spectroscopy. The results show that there is a marked variation in the rate of damage growth, as well as the damage morphology, along the path of the ion. Near the ion end-of-range (eor), damage increases monotonically with ion fluence until a buried amorphous layer is formed, while damage growth saturates at a low level in the region ahead. The morphology of the damage in the saturated region is shown to consist predominantly of simple defect clusters such as the divacancy. Damage growth remains saturated ahead of the eor until expansion of the buried amorphous layer encroaches into the region. A homogeneous growth model is presented which accounts for damage saturation, and accurately predicts the dose-rate dependence of the saturation level. Modifications of the model are discussed which are needed to account for the rapid growth in the eor region and near the interface of the buried amorphous layer. Two important factors contributing to rapid damage growth are identified. Spatial separation of the Frenkel defect pairs (i.e. interstitials and vacancies) due to the momentum of the interstitials is shown to greatly impact damage growth near the eor, while uniaxial strain in the interfacial region of the amorphous layer is identified as an important factor contributing to growth at that location. 20 refs., 10 figs

First-principles study of nitrogen doping in cubic and amorphous Ge2Sb2Te5

Science.gov (United States)

Caravati, S.; Colleoni, D.; Mazzarello, R.; Kühne, T. D.; Krack, M.; Bernasconi, M.; Parrinello, M.

2011-07-01

We investigated the structural, electronic and vibrational properties of amorphous and cubic Ge2Sb2Te5 doped with N at 4.2 at.% by means of large scale ab initio simulations. Nitrogen can be incorporated in molecular form in both the crystalline and amorphous phases at a moderate energy cost. In contrast, insertion of N in the atomic form is very energetically costly in the crystalline phase, though it is still possible in the amorphous phase. These results support the suggestion that N segregates at the grain boundaries during the crystallization of the amorphous phase, resulting in a reduction in size of the crystalline grains and an increased crystallization temperature.

Ge nitride formation in N-doped amorphous Ge2Sb2Te5

International Nuclear Information System (INIS)

Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

2007-01-01

The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

Method of forming buried oxide layers in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Local order origin of thermal stability enhancement in amorphous Ag doping GeTe

Energy Technology Data Exchange (ETDEWEB)

Xu, L.; Li, Y.; Yu, N. N.; Zhong, Y. P.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

2015-01-19

We demonstrate the impacts of Ag doping on the local atomic structure of amorphous GeTe phase-change material. The variations of phonon vibrational modes, boding nature, and atomic structure are shown by Raman, X-ray photoelectron spectroscopy, and ab initio calculation. Combining the experiments and simulations, we observe that the number of Ge atoms in octahedral site decreases and that in tetrahedral site increases. This modification in local order of GeTe originating from the low valence element will affect the crystallization behavior of amorphous GeTe, which is verified by differential scanning calorimetry and transmission electron microscope results. This work not only gives the analysis on the structural change of GeTe with Ag dopants but also provides a method to enhance the thermal stability of amorphous phase-change materials for memory and brain-inspired computing applications.

Hollow Amorphous MnSnO3 Nanohybrid with Nitrogen-Doped Graphene for High-Performance Lithium Storage

International Nuclear Information System (INIS)

Liu, Peng; Hao, Qingli; Xia, Xifeng; Lei, Wu; Xia, Hui; Chen, Ziyang; Wang, Xin

2016-01-01

Graphical abstract: A novel hybrid of hollow amorphous MnSnO 3 nanoparticles and nitrogen-doped reduced graphene oxide was fabricated. The unique structure and well-combination of both components account for the ultra long-term cyclic life with high reversible capacity of 610 mAh g −1 over 1000 cycles at 400 mA g −1 . - Highlights: • Novel hybrid of MnSnO 3 and nitrogen-doped reduced graphene oxide was fabricated. • The MnSnO 3 nanoparticles possess amorphous and hollow structure in the composite. • The excellent electrochemical performance benefits from unique nanostructure. • The reversible capacity of as-prepared hybrid is 610 mAh g −1 after 1000 cycles. • A long-term life with 97.3% capacity retention over 1000 cycles was obtained. - Abstract: Tin-based metal oxides usually suffer from severe capacity fading resulting from aggregation and considerable volume variation during the charge/discharge process in lithium ion batteries. In this work, a novel nanocomposite (MTO/N-RGO) of hollow amorphous MnSnO 3 (MTO) nanoparticles and nitrogen-doped reduced graphene oxide (N-RGO) has been designed and synthesized by a two-step method. Firstly, the nitrogen-doped graphene nanocomposite (MTO/N-RGO-P) with MnSn(OH) 6 crystal nanoparticles was synthesized by a facile solvothermal method. Subsequently, the MTO/N-RGO nanocomposite was obtained through the post heat treatment of MTO/N-RGO-P. The designed heterostructure and well-combination of the hollow amorphous MTO and N-RGO matrix can accelerate the ionic and electronic transport, and simultaneously accommodate the aggregation and volume variation of MTO nanoparticles during the lithiation–delithiation cycles. The as-prepared hybrid of MTO and N-RGO (MTO/N-RGO) exhibits a high reversible capacity of 707 mAh g −1 after 110 cycles at 200 mA g −1 , superior rate capability, and long-term cyclic life with high capacity of 610 mAh g −1 over 1000 cycles at 400 mA g −1 . Superior capacity retention of

Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes.

Science.gov (United States)

Tali, S A Safiabadi; Soleimani-Amiri, S; Sanaee, Z; Mohajerzadeh, S

2017-02-10

We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C 2 H 2 and N 2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm 2 (45 F/cm 3 ) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 10 3  Wh/m 3 (8.3 × 10 6  J/m 3 ) and ultra-high power density of 2.6 × 10 8  W/m 3 which is among the highest reported values.

Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.

1976-10-01

Experiments were performed in an attempt to make thin n + contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400 0 C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n + contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current

Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

International Nuclear Information System (INIS)

Lee, Hyun-Jun; Song, Pung-Keun

2014-01-01

Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Directory of Open Access Journals (Sweden)

Haiting Xie

2017-10-01

Full Text Available The nitrogen-doped amorphous oxide semiconductor (AOS thinfilm transistors (TFTs with double-stacked channel layers (DSCL were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µFE = 15.0 cm2・V−1・s−1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1 × 108 and stability (VTH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

Photoluminescence at 1.54 {mu}m of Er-doped hydrogenated amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Bresler, Mikhail; Gusev, Oleg; Kuznetsov, Alexey; Kudoyarova, Vera; Terukov, Evgenii; Yassievich, Irina [A.F. Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Fuhs, Walther [Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin (Germany); Ulber, Isabell; Weiser, Gerhard [Philipps-Universitat Marburg, Fachbereich Physik, D-35032 Marburg (Germany)

1998-05-11

Photoluminescence (PL) and light absorption of Er-doped amorphous hydrogenated silicon samples are measured at 77-300K. The temperature dependence of luminescence of erbium ions in a-Si:H(Er) is compared with that of intrinsic PL of a-Si:H. The lifetime of excited erbium ions in this amorphous matrix changes from 20 to 8 {mu}s in this temperature range. We propose a defect-related Auger excitation (DRAE) mechanism of erbium luminescence and demonstrate that it is consistent with the whole set of our experimental results. The temperature quenching of the erbium luminescence observed above 200K, with the activation energy of 250 meV, results from the competition of the DRAE and multiphonon nonradiative defect processes for D{sup 0}+e>D{sup -} transition

Minor-Cu doped soft magnetic Fe-based FeCoBCSiCu amorphous alloys with high saturation magnetization

Science.gov (United States)

Li, Yanhui; Wang, Zhenmin; Zhang, Wei

2018-05-01

The effects of Cu alloying on the amorphous-forming ability (AFA) and magnetic properties of the P-free Fe81Co5B11C2Si1 amorphous alloy were investigated. Addition of ≤ 1.0 at.% Cu enhances the AFA of the base alloy without significant deterioration of the soft magnetic properties. The Fe80.5Co5B11C2Si1Cu0.5 alloy with the largest critical thickness for amorphous formation of ˜35 μm possesses a high saturation magnetization (Bs) of ˜1.78 T, low coercivity of ˜14.6 A/m, and good bending ductility upon annealing in a wide temperature range of 513-553 K with maintaining the amorphous state. The fabrication of the new high-Fe-content Fe-Co-B-C-Si-Cu amorphous alloys by minor doping of Cu gives a guideline to developing high Bs amorphous alloys with excellent AFA.

Thermal grafting of fluorinated molecular monolayers on doped amorphous silicon surfaces

International Nuclear Information System (INIS)

Sabbah, H.; Zebda, A.; Ababou-Girard, S.; Solal, F.; Godet, C.; Conde, J. P.; Chu, V.

2009-01-01

Thermally induced (160-300 deg. C) gas phase grafting of linear alkene molecules (perfluorodecene) was performed on hydrogenated amorphous silicon (a-Si:H) films, either nominally undoped or doped with different boron and phosphorus concentrations. Dense and smooth a-Si:H films were grown using plasma decomposition of silane. Quantitative analysis of in situ x-ray photoelectron spectroscopy indicates the grafting of a single layer of organic molecules. The hydrophobic properties of perfluorodecene-modified surfaces were studied as a function of surface coverage. Annealing experiments in ultrahigh vacuum show the covalent binding and the thermal stability of these immobilized layers up to 370 deg. C; this temperature corresponds to the Si-C bond cleavage temperature. In contrast with hydrogenated crystalline Si(111):H, no heavy wet chemistry surface preparation is required for thermal grafting of alkene molecules on a-Si:H films. A threshold grafting temperature is observed, with a strong dependence on the doping level which produces a large contrast in the molecular coverage for grafting performed at 230 deg. C

X-ray absorption study of the electronic structure of Mn-doped amorphous Si

Energy Technology Data Exchange (ETDEWEB)

Arenholz, Elke; Zeng, Li; Huegel, A.; Helgren, E.; Hellman, F.; Piamonteze, C.; Arenholz, E.

2008-03-08

The electronic structure of Mn in amorphous Si (a-Mn{sub x}Si{sub 1?x}) is studied by X-ray absorption spectroscopy at the Mn L{sub 3,2} edges for x = 0.005-0.18. Except the x = 0.005 sample, which shows a slight signature of Mn{sup 2+} atomic multiplets associated with a local Mn moment, all samples have broad and featureless L{sub 3,2} absorption peaks, corresponding to an itinerant state for all 3d electrons. The broad X-ray absorption spectra exclude the possibility of a localized 3d moment and explain the unexpectedly quenched Mn moment in this magnetically-doped amorphous semiconductor. Such a fully delocalized d state of Mn dopant in Si has not been previously suggested.

Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

Energy Technology Data Exchange (ETDEWEB)

Meddeb, H., E-mail: hosny.meddeb@gmail.com [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); University of Carthage, Faculty of Sciences of Bizerta (Tunisia); Bearda, T.; Recaman Payo, M.; Abdelwahab, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Abdulraheem, Y. [Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat (Kuwait); Ezzaouia, H. [Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); Gordon, I.; Szlufcik, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering (ESAT), K.U. Leuven, 3001 Leuven (Belgium); Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt (Belgium)

2015-02-15

Highlights: • The influence of the cleaning process using different HF-based cleaning on the amorphous silicon passivation of homojunction boron doped emitters is analyzed. • The effect of boron doping level on surface characteristics after wet chemical cleaning: For heavily doped surfaces, the reduction in contact angle was less pronounced, which proves that such surfaces are more resistant to oxide formation and remain hydrophobic for a longer time. In the case of low HF concentration, XPS measurements show higher oxygen concentrations for samples with higher doping level, probably due to the incomplete removal of the native oxide. • Higher effective lifetime is achieved at lower doping for all considered different chemical pre-treatments. • A post-deposition annealing improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below. • The dominance of Auger recombination over other type of B-induced defects on lifetime quality in the case of our p+ emitter. - Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below.

Amorphous silicon passivation for 23.3% laser processed back contact solar cells

Science.gov (United States)

Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

2017-08-01

This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

First-principles study of nitrogen doping in cubic and amorphous Ge{sub 2}Sb{sub 2}Te{sub 5}

Energy Technology Data Exchange (ETDEWEB)

Caravati, S; Mazzarello, R; Kuehne, T D; Parrinello, M [Computational Science, Department of Chemistry and Applied Biosciences, ETH Zurich, USI Campus, Via Giuseppe Buffi 13, CH-6900 Lugano (Switzerland); Colleoni, D; Bernasconi, M [Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca, Via R Cozzi 53, I-20125 Milano (Italy); Krack, M [Paul Scherrer Institut, CH-5232 Villigen (Switzerland)

2011-07-06

We investigated the structural, electronic and vibrational properties of amorphous and cubic Ge{sub 2}Sb{sub 2}Te{sub 5} doped with N at 4.2 at.% by means of large scale ab initio simulations. Nitrogen can be incorporated in molecular form in both the crystalline and amorphous phases at a moderate energy cost. In contrast, insertion of N in the atomic form is very energetically costly in the crystalline phase, though it is still possible in the amorphous phase. These results support the suggestion that N segregates at the grain boundaries during the crystallization of the amorphous phase, resulting in a reduction in size of the crystalline grains and an increased crystallization temperature.

Amorphous boron-doped sodium titanates hydrates: Efficient and reusable adsorbents for the removal of Pb{sup 2+} from water

Energy Technology Data Exchange (ETDEWEB)

Di Bitonto, Luigi; Volpe, Angela; Pagano, Michele; Bagnuolo, Giuseppe; Mascolo, Giuseppe [CNR-IRSA, Via de Blasio 5, 70132 Bari (Italy); La Parola, Valeria [CNR-ISMN, Via U. La Malfa, 153, 90146 Palermo (Italy); Di Leo, Paola [CNR-IMAA, Via S. Loja, Tito Scalo (PZ) (Italy); Pastore, Carlo, E-mail: carlo.pastore@ba.irsa.cnr.it [CNR-IRSA, Via de Blasio 5, 70132 Bari (Italy)

2017-02-15

Highlights: • Amorphous B-doped sodium titanates hydrates were mildly synthesized. • These compounds resulted efficiently used in removing Pb{sup 2+} from natural water. • Adsorption occurs with a partial ionic exchange mechanism. • Adsorbents were easily recoverable and reusable for further new cycles. - Abstract: Amorphous titanium hydroxide and boron-doped (B-doped) sodium titanates hydrates were synthetized and used as adsorbents for the removal of Pb{sup 2+} from water. The use of sodium borohydride (NaBH{sub 4}) and titanium(IV) isopropoxide (TTIP) as precursors permits a very easy synthesis of B-doped adsorbents at 298 K. The new adsorbent materials were first chemically characterized (XRD, XPS, SEM, DRIFT and elemental analysis) and then tested in Pb{sup 2+} adsorption batch experiments, in order to define kinetics and equilibrium studies. The nature of interaction between such sorbent materials and Pb{sup 2+} was also well defined: besides a pure adsorption due to hydroxyl interaction functionalities, there is also an ionic exchange between Pb{sup 2+} and sodium ions even working at pH 4.4. Langmuir model presented the best fitting with a maximum adsorption capacity up to 385 mg/g. The effect of solution pH and common ions (i.e. Na{sup +}, Ca{sup 2+} and Mg{sup 2+}) onto Pb{sup 2+} sorption were also investigated. Finally, recovery was positively conducted using EDTA. Very efficient adsorption (>99.9%) was verified even using tap water spiked with traces of Pb{sup 2+} (50 ppb).

Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Yoriko; Furuta, Masahiro; Kuriyama, Koichi; Kuwabara, Ryosuke; Katsuki, Yukiko [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan); Kondo, Takeshi [Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Fujishima, Akira [Kanagawa Advanced Science and Technology (KAST), 3-2-1, Sakato, Takatsu-ku, Kawasaki-shi, Kanagawa 213-0012 (Japan); Honda, Kensuke, E-mail: khonda@yamaguchi-u.ac.j [Division of Environmental Science and Engineering, Graduate School of Science and Engineering, Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8512 (Japan)

2011-01-01

Nitrogen-doped hydrogenated amorphous carbon thin films (a-C:N:H, N-doped DLC) were synthesized with microwave-assisted plasma-enhanced chemical vapor deposition widely used for DLC coating such as the inner surface of PET bottles. The electrochemical properties of N-doped DLC surfaces that can be useful in the application as an electrochemical sensor were investigated. N-doped DLC was easily fabricated using the vapor of nitrogen contained hydrocarbon as carbon and nitrogen source. A N/C ratio of resulting N-doped DLC films was 0.08 and atomic ratio of sp{sup 3}/sp{sup 2}-bonded carbons was 25/75. The electrical resistivity and optical gap were 0.695 {Omega} cm and 0.38 eV, respectively. N-doped DLC thin film was found to be an ideal polarizable electrode material with physical stability and chemical inertness. The film has a wide working potential range over 3 V, low double-layer capacitance, and high resistance to electrochemically induced corrosion in strong acid media, which were the same level as those for boron-doped diamond (BDD). The charge transfer rates for the inorganic redox species, Fe{sup 2+/3+} and Fe(CN){sub 6}{sup 4-/3-} at N-doped DLC were sufficiently high. The redox reaction of Ce{sup 2+/3+} with standard potential higher than H{sub 2}O/O{sub 2} were observed due to the wider potential window. At N-doped DLC, the change of the kinetics of Fe(CN){sub 6}{sup 3-/4-} by surface oxidation is different from that at BDD. The rate of Fe(CN){sub 6}{sup 3-/4-} was not varied before and after oxidative treatment on N-doped DLC includes sp{sup 2} carbons, which indicates high durability of the electrochemical activity against surface oxidation.

Photoconductivity studies on amorphous and crystalline TiO{sub 2} films doped with gold nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Valverde-Aguilar, G.; Garcia-Macedo, J.A. [Universidad Nacional Autonoma de Mexico, Departamento de Estado Solido, Instituto de Fisica, Mexico D.F. (Mexico); Renteria-Tapia, V. [Universidad de Guadalajara, Centro Universitario de los Valles, Departamento de Ciencias Naturales y Exactas, Ameca, Jalisco (Mexico); Aguilar-Franco, M. [Universidad Nacional Autonoma de Mexico, Departamento de Fisica Quimica, Instituto de Fisica, Mexico D.F. (Mexico)

2011-06-15

In this work, amorphous and crystalline TiO{sub 2} films were synthesized by the sol-gel process at room temperature. The TiO{sub 2} films were doped with gold nanoparticles. The films were spin-coated on glass wafers. The crystalline samples were annealed at 100 C for 30 minutes and sintered at 520 C for 2 h. All films were characterized using X-ray diffraction, transmission electronic microscopy and UV-Vis absorption spectroscopy. Two crystalline phases, anatase and rutile, were formed in the matrix TiO{sub 2} and TiO{sub 2}/Au. An absorption peak was located at 570 nm (amorphous) and 645 nm (anatase). Photoconductivity studies were performed on these films. The experimental data were fitted with straight lines at darkness and under illumination at 515 nm and 645 nm. This indicates an ohmic behavior. Crystalline TiO{sub 2}/Au films are more photoconductive than the amorphous ones. (orig.)

Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection.

Science.gov (United States)

Kang, Byung Ha; Kim, Won-Gi; Chung, Jusung; Lee, Jin Hyeok; Kim, Hyun Jae

2018-02-28

A homojunction-structured amorphous indium gallium zinc oxide (a-IGZO) phototransistor that can detect visible light is reported. The key element of this technology is an absorption layer composed of hydrogen-doped a-IGZO. This absorption layer is fabricated by simple hydrogen plasma doping, and subgap states are induced by increasing the amount of hydrogen impurities. These subgap states, which lead to a higher number of photoexcited carriers and aggravate the instability under negative bias illumination stress, enabled the detection of a wide range of visible light (400-700 nm). The optimal condition of the hydrogen-doped absorption layer (HAL) is fabricated at a hydrogen partial pressure ratio of 2%. As a result, the optimized a-IGZO phototransistor with the HAL exhibits a high photoresponsivity of 1932.6 A/W, a photosensitivity of 3.85 × 10 6 , and a detectivity of 6.93 × 10 11 Jones under 635 nm light illumination.

Suppression of photo-leakage current in amorphous silicon thin-film transistors by n-doped nanocrystalline silicon

International Nuclear Information System (INIS)

Lin, Hung-Chien; Ho, King-Yuan; Hsu, Chih-Chieh; Yan, Jing-Yi; Ho, Jia-Chong

2011-01-01

The reduction of photo-leakage current of amorphous silicon thin-film transistors (a-Si TFTs) is investigated and is found to be successfully suppressed by the use of an n-doped nanocrystalline silicon layer (n+ nc-Si) as an ohmic contact layer. The shallow-level defects of n+ nc-Si can become trapping centres of photo-induced electrons as the a-Si TFT is operated under light illumination. A lower oxygen concentration during n+ nc-Si deposition can increase the creation of shallow-level defects and improve the contrast ratio of active matrix organic light-emitting diode panels.

Controllable Electrochemical Activities by Oxidative Treatment toward Inner-Sphere Redox Systems at N-Doped Hydrogenated Amorphous Carbon Films

Directory of Open Access Journals (Sweden)

Yoriko Tanaka

2012-01-01

Full Text Available The electrochemical activity of the surface of Nitrogen-doped hydrogenated amorphous carbon thin films (a-CNH, N-doped DLC toward the inner sphere redox species is controllable by modifying the surface termination. At the oxygen plasma treated N-doped DLC surface (O-DLC, the surface functional groups containing carbon doubly bonded to oxygen (C=O, which improves adsorption of polar molecules, were generated. By oxidative treatment, the electron-transfer rate for dopamine (DA positively charged inner-sphere redox analyte could be improved at the N-doped DLC surface. For redox reaction of 2,4-dichlorophenol, which induces an inevitable fouling of the anode surface by forming passivating films, the DLC surfaces exhibited remarkably higher stability and reproducibility of the electrode performance. This is due to the electrochemical decomposition of the passive films without the interference of oxygen evolution by applying higher potential. The N-doped DLC film can offer benefits as the polarizable electrode surface with the higher reactivity and higher stability toward inner-sphere redox species. By making use of these controllable electrochemical reactivity at the O-DLC surface, the selective detection of DA in the mixed solution of DA and uric acid could be achieved.

Controlling electrodeposited ultrathin amorphous Fe hydroxides film on V-doped nickel sulfide nanowires as efficient electrocatalyst for water oxidation

Science.gov (United States)

Shang, Xiao; Yan, Kai-Li; Lu, Shan-Shan; Dong, Bin; Gao, Wen-Kun; Chi, Jing-Qi; Liu, Zi-Zhang; Chai, Yong-Ming; Liu, Chen-Guang

2017-09-01

Developing cost-effective electrocatalysts with both high activity and stability remains challenging for oxygen evolution reaction (OER) in water electrolysis. Herein, based on V-doped nickel sulfide nanowire on nickel foam (NiVS/NF), we further conduct controllable electrodeposition of Fe hydroxides film on NiVS/NF (eFe/NiVS/NF) to further improve OER performance and stability. For comparison, ultrafast chemical deposition of Fe hydroxides on NiVS/NF (uFe/NiVS/NF) is also utilized. V-doping of NiVS/NF may introduce more active sites for OER, and nanowire structure can expose abundant active sites and facilitate mass transport. Both of the two depositions generate amorphous Fe hydroxides film covering on the surface of nanowires and lead to enhanced OER activities. Furthermore, electrodeposition strategy realizes uniform Fe hydroxides film on eFe/NiVS/NF confirmed by superior OER activity of eFe/NiVS/NF than uFe/NiVS/NF with relatively enhanced stability. The OER activity of eFe/NiVS/NF depends on various electrodepositon time, and the optimal time (15 s) is obtained with maximum OER activity. Therefore, the controllable electrodeposition of Fe may provide an efficient and simple strategy to enhance the OER properties of electrocatalysts.

Influence of small metallic particles on the absorption and emission in amorphous materials doped with rare earths

International Nuclear Information System (INIS)

Malta, O.L.; Santa Cruz, P.A.; Sa, G.F. de

1987-01-01

The influence of small metallic clusters on the absorption and emission processes in molecular species shows a great interest as well the fundamental as the pratical point of view. This subject, which has been recently developed, covers several aspects related to the kinetics of formation of these chusters and to theirs optical properties in amorphous media. A study of this problem developed by the first time for the case of one volumetric distribution of metallic particles is presented. With this aim, fluoborate glasses doped with Eu 3+ ion which fluorescence is well known in several materials are used. (L.C.) [pt

Nb-doped TiO2 thin films as photocatalytic materials

Indian Academy of Sciences (India)

Administrator

that hydrophilicity is ruled by a different mechanism than photocatalysis. Keywords. Nb-doped ... studied for a large area of applications: solar cells,1–3 hydrogen ... our previous work.12,13 Results show that all the films are amorphous and ...

Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

CERN Document Server

Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

2000-01-01

We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

Energy Technology Data Exchange (ETDEWEB)

Jiang, Y. C.; Gao, J., E-mail: jugao@hku.hk [Research Center for Solid State Physics and Materials, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, Jiangsu (China)

2016-08-22

Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V{sub oc} = 320 mV and short-circuit current density J{sub sc }= 5.62 mA/cm{sup 2} were measured under illumination of 532-nm light with the power of 100 mW/cm{sup 2}. In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed a reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix.

High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

Science.gov (United States)

Ahn, Min-Ju; Cho, Won-Ju

2017-10-01

In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

Fabrication of C60/amorphous carbon superlattice structures

International Nuclear Information System (INIS)

Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2001-01-01

The nitrogen doping effects in C 60 films by RF plasma source was investigated, and it was found that the nitrogen ion bombardment broke up C 60 molecules and changed them into amorphous carbon. Based on these results, formation of C 60 /amorphous carbon superlattice structure was proposed. The periodic structure of the resulted films was confirmed by XRD measurements, as the preliminary results of fabrication of the superlattice structure

Conductivity enhancement of ion tracks in tetrahedral amorphous carbon by doping with N, B, Cu and Fe

International Nuclear Information System (INIS)

Krauser, J.; Nix, A.-K.; Gehrke, H.-G.; Hofsäss, H.; Trautmann, C.; Weidinger, A.

2012-01-01

Conducting ion tracks are formed when high-energy heavy ions (e.g. 1 GeV Au) pass through tetrahedral amorphous carbon (ta-C). These nanowires with a diameter of about 8 nm are embedded in the insulating ta-C matrix and of interest for various nanotechnological applications. Usually the overall conductivity of the tracks and the current/voltage characteristics (Ohmic or non-Ohmic) vary strongly from track to track, even when measured on the same sample, indicating that the track formation is neither complete nor homogeneous. To improve the track conductivity, doping of ta-C with N, B, Cu, or Fe is investigated. Beneficial changes in track conductivity after doping compete with a conductivity increase of the surrounding matrix material. Best results are achieved by incorporation of 1 at.% Cu, while for different reasons, the improvement of the tracks remains moderate for N, B, and Fe doping. Conductivity enhancement of the tracks is assumed to develop during the ion track formation process by an increased number of localized states which contribute to the current transport.

High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2–TiO2 library

International Nuclear Information System (INIS)

Chang, K.-S.; Lu, W.-C.; Wu, C.-Y.; Feng, H.-C.

2014-01-01

Highlights: • Amorphous N 2 -doped HfO 2 –TiO 2 libraries were fabricated using sputtering. • Structure and quality of the dielectric and interfacial layers were investigated. • κ (54), J L < 10 −6 A/cm 2 , and equivalent oxide thickness (1 nm) were identified. - Abstract: High-throughput sputtering was used to fabricate high-quality, amorphous, thin HfO 2 –TiO 2 and N 2 -doped HfO 2 –TiO 2 (HfON–TiON) gate dielectric libraries. Electron probe energy dispersive spectroscopy was used to investigate the structures, compositions, and qualities of the dielectric and interfacial layers of these libraries to determine their electrical properties. A κ value of approximately 54, a leakage current density <10 −6 A/cm 2 , and an equivalent oxide thickness of approximately 1 nm were identified in an HfON–TiON library within a composition range of 68–80 at.% Ti. This library exhibits promise for application in highly advanced metal–oxide–semiconductor (higher-κ) gate stacks

Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

International Nuclear Information System (INIS)

Artamanov, V.V.; Valakh, M.Ya.; Klyui, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

1998-01-01

The properties of silicon structures with silicon carbide (SiC) buried layers produced by high-dose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer formation is also studied. It is shown that in identical implantation and post-implantation annealing regimes a SiC buried layer forms more efficiently in CZ Si wafers or in Si (CZ or FZ) subjected to the coimplantation of oxygen. Thus, oxygen promotes SiC layer formation as a result of the formation of SiO x precipitates and accommodation of the volume change in the region where the SiC phase forms. Carbon segregation and the formation of an amorphous carbon film on the SiC grain boundaries are also discovered

Charge transport in electrically doped amorphous organic semiconductors.

Science.gov (United States)

Yoo, Seung-Jun; Kim, Jang-Joo

2015-06-01

This article reviews recent progress on charge generation by doping and its influence on the carrier mobility in organic semiconductors (OSs). The doping induced charge generation efficiency is generally low in OSs which was explained by the integer charge transfer model and the hybrid charge transfer model. The ionized dopants formed by charge transfer between hosts and dopants can act as Coulomb traps for mobile charges, and the presence of Coulomb traps in OSs broadens the density of states (DOS) in doped organic films. The Coulomb traps strongly reduce the carrier hopping rate and thereby change the carrier mobility, which was confirmed by experiments in recent years. In order to fully understand the doping mechanism in OSs, further quantitative and systematic analyses of charge transport characteristics must be accomplished. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Crystallization inhibitors for amorphous oxides

International Nuclear Information System (INIS)

Reznitskij, L.A.; Filippova, S.E.

1993-01-01

Data for the last 10 years, in which experimental results of studying the temperature stabilization of x-ray amorphous oxides (including R 3 Fe 5 O 12 R-rare earths, ZrO 2 , In 2 O 3 , Sc 2 O 3 ) and their solid solution are presented, are generalized. Processes of amorphous oxide crystallization with the production of simple oxides, solid solutions and chemical compounds with different polyhedral structure, are investigated. Energy and crystallochemical criteria for selecting the doping inhibitor-components stabilizing the amorphous state are ascertained, temperatures and enthalpies of amorpous oxide crystallization are determined, examination of certain provisions of iso,orphous miscibility theory is conducted

Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

Science.gov (United States)

Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

2018-07-01

Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

An 8.68% efficiency chemically-doped-free graphene-silicon solar cell using silver nanowires network buried contacts.

Science.gov (United States)

Yang, Lifei; Yu, Xuegong; Hu, Weidan; Wu, Xiaolei; Zhao, Yan; Yang, Deren

2015-02-25

Graphene-silicon (Gr-Si) heterojunction solar cells have been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the high sheet resistance of chemical vapor deposited (CVD) Gr films is still the most important limiting factor for the improvement of the power conversion efficiency of Gr-Si solar cells, especially in the case of large device-active area. In this work, we have fabricated a novel transparent conductive film by hybriding a monolayer Gr film with silver nanowires (AgNWs) network soldered by the graphene oxide (GO) flakes. This Gr-AgNWs hybrid film exhibits low sheet resistance and larger direct-current to optical conductivity ratio, quite suitable for solar cell fabrication. An efficiency of 8.68% has been achieved for the Gr-AgNWs-Si solar cell, in which the AgNWs network acts as buried contacts. Meanwhile, the Gr-AgNWs-Si solar cells have much better stability than the chemically doped Gr-Si solar cells. These results show a new route for the fabrication of high efficient and stable Gr-Si solar cells.

Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

Energy Technology Data Exchange (ETDEWEB)

Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

2010-06-30

Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

Enriched Boron-Doped Amorphous Selenium Based Position-Sensitive Solid-State Thermal Neutron Detector for MPACT Applications

International Nuclear Information System (INIS)

Mandal, Krishna

2017-01-01

High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of 3 He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of 3 He will be very desirable. To address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron ( 10 B) and enriched lithium ( 6 Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (t g ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10 -24 cm 2 ), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

Directory of Open Access Journals (Sweden)

M. Morales-Masis

2014-09-01

Full Text Available Improving the conductivity of earth-abundant transparent conductive oxides (TCOs remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

2014-09-01

Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

Study of amorphous semiconductors doped with rare earths (Gd and Er) and conducting polymers by EPR techniques and magnetic susceptibility

International Nuclear Information System (INIS)

Sercheli, Mauricio da Silva

1999-01-01

This thesis involves the study of amorphous semiconductors and conducting polymers, which have been characterized by EPR and magnetic susceptibility measurements, and to a lesser extent by Raman spectroscopy and RBS. The semiconductors were studied using thin films of silicon doped with rare earth metals, e.g. erbium and gadolinium, which had their magnetic properties studied. Using these studies we could determine the state of valence of the rare earths as well as their concentrations in the silicon matrix. According to our results, the valence of the rare earth metal ions is 3+, and we were able to conclude that 4f electronic shells could not be used for the calculation of the conducting band in this system. Furthermore, the analysis of the data on the magnetic susceptibility of the Er 3+ ion with cubic crystalline acting field, gave us the opportunity to estimate the overall splitting of their electronic states for the first time. The conducting polymers were studied using samples of poly(3-methylthiophene) doped with ClO 4 - , which show a phase transition in the range of 230 K to 130 K. The electron paramagnetic resonance also gives important information on the crystallization, doping level and the presence of polarons or bipolarons in conducting polymers. (author)

Interaction between rare-earth ions and amorphous silicon nanoclusters produced at low processing temperatures

Energy Technology Data Exchange (ETDEWEB)

Meldrum, A. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada)]. E-mail: ameldrum@ualberta.ca; Hryciw, A. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada); MacDonald, A.N. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada); Blois, C. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada); Clement, T. [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G2V4 (Canada); De Corby, R. [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G2V4 (Canada); Wang, J. [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China); Li Quan [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China)

2006-12-15

Temperatures of 1000 deg. C and higher are a significant problem for the incorporation of erbium-doped silicon nanocrystal devices into standard silicon technology, and make the fabrication of contacts and reflectors in light emitting devices difficult. In the present work, we use energy-filtered TEM imaging techniques to show the formation of size-controlled amorphous silicon nanoclusters in SiO films annealed between 400 and 500 deg. C. The PL properties of such films are characteristic of amorphous silicon, and the spectrum can be controlled via a statistical size effect-as opposed to quantum confinement-that has previously been proposed for porous amorphous silicon. Finally, we show that amorphous nanoclusters sensitize the luminescence from the rare-earth ions Er, Nd, Yb, and Tm with excitation cross-sections similar in magnitude to erbium-doped silicon nanocrystal composites, and with a similar nonresonant energy transfer mechanism.

Impurity-defect complexes in hydrogenated amorphous silicon

International Nuclear Information System (INIS)

Yang, L.H.; Fong, C.Y.; Nichols, C.S.

1991-01-01

The two most outstanding features observed for dopants in hydrogenated amorphous silicon (a-Si:H)-a shift in the Fermi level accompanied by an increase in the defect density and an absence of degenerate doping have previously been postulated to stem from the formation of substitutional dopant-dangling bond complexes. Using first-principles self-consistent pseudopotential calculations in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results. The authors have studied the electronic and structural properties of substitutional fourfold-coordinated phosphorus and boron at the second neighbor position to a dangling bond defect. This paper demonstrates that such impurity-defect complexes can account for the general features observed experimentally in doped a-Si:H

Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of amorphous silicon solar cells (Research on amorphous silicon interface); 1991 nendo amorphous silicon taiyo denchi no kenkyu kaihatsu seika hokokusho. Amorphous silicon no kaimen no kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1992-03-01

The amorphous solar cell interface has been under study for the enhancement of efficiency and reliability in amorphous solar cells, and this is the compilation of the results achieved in fiscal 1991. In the effort to enhance delta-doped amorphous silicon solar cell efficiency, an amorphous Si solar cell is built using a ZnO film as the transparent conductive film. As the result, an a-Si solar cell with a conversion efficiency of 11.5% is obtained. In the research on the suppression of photodegradation in a-Si, from the viewpoint that a reduction in the amount of hydrogen contained excessively in the film will be effective in decelerating photodegradation, a photoexcited hydrogen radical treatment method is newly proposed, and basic studies are conducted on it. As the result, it is found that an a-Si film processed by a 20-second hydrogen treatment at a substrate temperature of 460 degrees C exhibits a lower photodegradation rate than an ordinary a-Si film. In the research on the deposition of amorphous Si film, a VHF frequency is used instead of 13.56MHz for plasma, and an amorphous Si film is deposited efficiently at a lower voltage at which ions cause less damage. (NEDO)

Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Hayashi, Y.; Yu, G.; Rahman, M. M.; Krishna, K. M.; Soga, T.; Jimbo, T.; Umeno, M.

2001-01-01

Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH 4 as the source of carbon and with different nitrogen flow rates (N 2 /CH 4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp 2 -bonded carbon or a change in sp 2 domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band. [copyright] 2001 American Institute of Physics

Crystallization behavior of Ge-doped eutectic Sb70Te30 films in optical disks

International Nuclear Information System (INIS)

Khulbe, Pramod K.; Hurst, Terril; Mansuripur, Masud; Horie, Michikazu

2002-01-01

We report laser-induced crystallization behavior of binary Sb-Te and ternary Ge-doped eutectic Sb70Te30 thin film samples in a typical quadrilayer stack as used in phase-change optical disk data storage. Several experiments have been conducted on a two-laser static tester in which one laser operating in pulse mode writes crystalline marks on amorphous film or amorphous marks on crystalline film, while the second laser operating at low-power cw mode simultaneously monitors the progress of the crystalline or amorphous mark formation in real time in terms of the reflectivity variation. The results of this study show that the crystallization kinetics of this class of film is strongly growth dominant, which is significantly different from the crystallization kinetics of stochiometric Ge-Sb-Te compositions. In Sb-Te and Ge-doped eutectic Sb70Te30 thin-film samples, the crystallization behavior of the two forms of amorphous states, namely, as-deposited amorphous state and melt-quenched amorphous state, remains approximately same. We have also presented experiments showing the effect of the variation of the Sb/Te ratio and Ge doping on the crystallization behavior of these films

UV Irradiation Effects in Pure and Tin-Doped Amorphous AsSe Films

Science.gov (United States)

2001-06-01

during irradiation did not exceed 40 ’C. 304 M. Popescu, M. lovu, W. Hloyer, 0. Shpotyuk , F. Sava, A. L6rinczi 3. Results Pure and tin-doped AsSe filns...9000 ,- ,, ---, ,, - ,, - 9000 .... ... .-.. .. r111h) (222) Illuminated 8000 8000 - 7000 7000 lie (220) 6000 6000 5000 O 5000 4000 - 4000 3000 .L...Popescu, M. lovu, W. Hoyer, 0. Shpotyuk , F. Sava, A. L6rinczi the effective thickness of the layers and, possibly, the correlation length. The photo

Enriched Boron-Doped Amorphous Selenium Based Position-Sensitive Solid-State Thermal Neutron Detector for MPACT Applications

Energy Technology Data Exchange (ETDEWEB)

Mandal, Krishna [Univ. of South Carolina, Columbia, SC (United States)

2017-09-29

High-efficiency thermal neutron detectors with compact size, low power-rating and high spatial, temporal and energy resolution are essential to execute non-proliferation and safeguard protocols. The demands of such detector are not fully covered by the current detection system such as gas proportional counters or scintillator-photomultiplier tube combinations, which are limited by their detection efficiency, stability of response, speed of operation, and physical size. Furthermore, world-wide shortage of ³He gas, required for widely used gas detection method, has further prompted to design an alternative system. Therefore, a solid-state neutron detection system without the requirement of ³He will be very desirable. To address the above technology gap, we had proposed to develop new room temperature solidstate thermal neutron detectors based on enriched boron (¹⁰B) and enriched lithium (⁶Li) doped amorphous Se (As- 0.52%, Cl 5 ppm) semiconductor for MPACT applications. The proposed alloy materials have been identified for its many favorable characteristics - a wide bandgap (~2.2 eV at 300 K) for room temperature operation, high glass transition temperature (t_g ~ 85°C), a high thermal neutron cross-section (for boron ~ 3840 barns, for lithium ~ 940 barns, 1 barn = 10^-24 cm²), low effective atomic number of Se for small gamma ray sensitivity, and high radiation tolerance due to its amorphous structure.

Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

International Nuclear Information System (INIS)

Zaghdoudi, M.; Abdelkrim, M.M.; Fathallah, M.; Mohammed-Brahim, T.; Rogel, R.

2006-01-01

The optical and electrical properties of amorphously deposited and then post-crystallized silicon films are studied as a function of the deposition pressure and the phosphorus doping. Amorphous silicon films are deposited in a high pressure regime by SAPCVD (Sub-Atmospheric Pressure Chemical Vapour Deposition) to study the effect of the deposition pressure. They are also deposited in a low pressure regime by LPCVD (Low Pressure Chemical Vapour Deposition) to study the effect of a low phosphorus doping. Both types of amorphous films are then crystallized in the solid phase at 600 deg. C. Using different optical and electrical characterization techniques, the beneficial effect of a high pressure as well as of a weak phosphorus doping on the decrease of the defect density is highlighted. These results give some ways to improve the quality of polysilicon enough to be used in photovoltaic or in thin film electronic devices

Structure and giant magnetoresistance of carbon-based amorphous films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Ma, L.; He, M.F.; Liu, Z.W.; Zeng, D.C.; Gu, Z.F.; Cheng, G.

2014-01-01

Pure amorphous carbon (a-C) and Co-doped Co x C 1−x films were prepared on n-Si(100) substrates by dc magnetron sputtering. In Co–C films, the nano-sized amorphous Co particles were homogeneously dispersed in the amorphous cross-linked carbon matrix. The structures of a-C and Co x C 1−x films were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. The results showed that the a-C films were diamond-like carbon (DLC) films. After doping cobalt into DLC film, the sp 3 -hybridized carbon content in DLC composite films almost had no change. The as-deposited Co x C 1−x granular films had larger value of magnetoresistance (MR) than the amorphous carbon film. A very high positive MR, up to 15.5% at magnetic field B = 0.8 T and x = 2.5 at.% was observed in a Co x C 1−x granular film with thickness of 80 nm at room temperature when the external magnetic field was perpendicular to the electric current and the film surface. With increase of the film thickness and Co-doped content, the MR decreased gradually. It remains a challenge to well explain the observed MR effect in the Co x C 1−x granular films. - Highlights: • The amorphous carbon films were diamond-like carbon films. • No carbide appearing, the Co–C composite films form a good metal/insulator system. • A high positive magnetoresistance, up to 15.5% at B = 0.8 T was observed in Co–C films

Kinetic Monte Carlo simulation of growth of Ge quantum dot multilayers with amorphous matrix

Energy Technology Data Exchange (ETDEWEB)

Endres, Jan, E-mail: endres.jan@gmail.com; Holý, Václav; Daniš, Stanislav [Charles University, Faculty of Mathematics and Physics (Czech Republic); Buljan, Maja [Ruđer Bošković Institute (Croatia)

2017-04-15

Kinetic Monte Carlo method is used to simulate the growth of germanium quantum dot multilayers with amorphous matrix. We modified a model for self-assembled growth of quantum dots in crystalline matrix for the case of the amorphous one. The surface morphology given as hills above the buried dots is the main driving force for the ordering of the quantum dots. In the simulations, we observed a short-range self-ordering in the lateral direction. The ordering in lateral and vertical direction depends strongly on the surface morphology, mostly on the strength how the deposited material replicates previous surfaces.

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Energy Technology Data Exchange (ETDEWEB)

Jeong, Ho-young [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong [LG Display R and D Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811 (Korea, Republic of); Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

2014-01-13

We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n{sup +} a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10{sup −3} Ω cm after treatment, and then it increases to 7.92 × 10{sup −2} Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n{sup +}a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n{sup +} a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm{sup 2}/V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H{sub 2} plasma treatment degrades significantly after 300 °C annealing.

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

International Nuclear Information System (INIS)

Jeong, Ho-young; Lee, Bok-young; Lee, Young-jang; Lee, Jung-il; Yang, Myoung-su; Kang, In-byeong; Mativenga, Mallory; Jang, Jin

2014-01-01

We report thermally stable coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with heavily doped n + a-IGZO source/drain regions. Doping is through He plasma treatment in which the resistivity of the a-IGZO decreases from 2.98 Ω cm to 2.79 × 10 −3 Ω cm after treatment, and then it increases to 7.92 × 10 −2 Ω cm after annealing at 300 °C. From the analysis of X-ray photoelectron spectroscopy, the concentration of oxygen vacancies in He plasma treated n + a-IGZO does not change much after thermal annealing at 300 °C, indicating thermally stable n + a-IGZO, even for TFTs with channel length L = 4 μm. Field-effect mobility of the coplanar a-IGZO TFTs with He plasma treatment changes from 10.7 to 9.2 cm 2 /V s after annealing at 300 °C, but the performance of the a-IGZO TFT with Ar or H 2 plasma treatment degrades significantly after 300 °C annealing

Controlled generation of silver nanocolloid in amorphous silica materials

International Nuclear Information System (INIS)

Gil, C.; Garcia-Heras, M.; Carmona, N.; Villages, M. A.

2004-01-01

Amorphous silica-based materials bulk and superficially doped with silver nano colloids were prepared. Bulk doped glasses were obtained by conventional melting and doped monolithic slabs by sol-gel. Superficially doped glasses were obtained by ion-exchange and doped coatings by sol-gel. The samples were characterised by TEM and UV-VIS spectrometry. Depending on the composition, the silver incorporation process, and the thermal treatments, several colourings were obtained. By controlling these parameters, metallic silver nano colloids can be generated in the matrices studied. Colloids aggregation and growing up depends on the matrix nature and on the experimental process carried out. (Author) 10 refs

CO2 Laser annealing of n-doped hydrogenated amorphous silicon

International Nuclear Information System (INIS)

Bertolotti, M.; Ferrari, A.; Evangelisti, F.; Fiorini, P.; Proietti, M.G.

1985-01-01

Low power CO 2 laser annealing of n-doped a-Si:H is reported. Conductivity and its activation energy, photoconductivity, absorption coefficient and dependence of photoconductivity on light power show changes which can be interpreted as due to a better doping efficiency

EXAFS study of the stability of amorphous TbFe thin films

International Nuclear Information System (INIS)

Samant, M.G.; Marinero, E.E.; Robinson, C.; Cargill, G.S.

1989-01-01

This paper discusses the measurement of the local atomic structure of Fe in Au doped Tb-Fe thin film alloys by the use of EXAFS. The as deposited sample shows structural features which are essentially identical to those of the undoped films. Au additions stabilizes the amorphous structure against recrystallization, however, the loss of magnetic anisotropy under thermal annealing is not reduced. This demonstrates that magnetic relaxation in these alloys does not involve crystallization of the amorphous structure

Krypton irradiation damage in Nd-doped zirconolite and perovskite

International Nuclear Information System (INIS)

Davoisne, C.; Stennett, M.C.; Hyatt, N.C.; Peng, N.; Jeynes, C.; Lee, W.E.

2011-01-01

Understanding the effect of radiation damage and noble gas accommodation in potential ceramic hosts for plutonium disposition is necessary to evaluate their long-term behaviour during geological disposal. Polycrystalline samples of Nd-doped zirconolite and Nd-doped perovskite were irradiated ex situ with 2 MeV Kr + at a dose of 5 x 10 15 ions cm -2 to simulate recoil of Pu nuclei during alpha decay. The feasibility of thin section preparation of both pristine and irradiated samples by Focused Ion Beam sectioning was demonstrated. After irradiation, the Nd-doped zirconolite revealed a well defined amorphous region separated from the pristine material by a thin (40-60 nm) damaged interface. The zirconolite lattice was lost in the damaged interface, but the fluorite sublattice was retained. The Nd-doped perovskite contained a defined irradiated layer composed of an amorphous region surrounded by damaged but still crystalline layers. The structural evolution of the damaged regions is consistent with a change from orthorhombic to cubic symmetry. In addition in Nd-doped perovskite, the amorphisation dose depended on crystallographic orientation and possibly sample configuration (thin section or bulk). Electron Energy Loss Spectroscopy revealed Ti remained in the 4+ oxidation state but there was a change in Ti coordination in both Nd-doped perovskite and Nd-doped zirconolite associated with the crystalline to amorphous transition.

Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET

Science.gov (United States)

Ramezani, Zeinab; Orouji, Ali A.

2016-10-01

For achieving reliable transistor, we investigate an amended channel doping (ACD) engineering which improves the electrical and thermal performances of fully-depleted silicon-on-insulator (SOI) MOSFET. We have called the proposed structure with the amended channel doping engineering as ACD-SOI structure and compared it with a conventional fully-depleted SOI MOSFET (C-SOI) with uniform doping distribution using 2-D ATLAS simulator. The amended channel doping is a vertical graded doping that is distributed from the surface of structure with high doping density to the bottom of channel, near the buried oxide, with low doping density. Short channel effects (SCEs) and leakage current suppress due to high barrier height near the source region and electric field modification in the ACD-SOI in comparison with the C-SOI structure. Furthermore, by lower electric field and electron temperature near the drain region that is the place of hot carrier generation, we except the improvement of reliability and gate induced drain lowering (GIDL) in the proposed structure. Undesirable Self heating effect (SHE) that become a critical challenge for SOI MOSFETs is alleviated in the ACD-SOI structure because of utilizing low doping density near the buried oxide. Thus, refer to accessible results, the ACD-SOI structure with graded distribution in vertical direction is a reliable device especially in low power and high temperature applications.

Characterization of amorphous and nanocrystalline carbon films

International Nuclear Information System (INIS)

Chu, Paul K.; Li Liuhe

2006-01-01

Amorphous and nanocrystalline carbon films possess special chemical and physical properties such as high chemical inertness, diamond-like properties, and favorable tribological proprieties. The materials usually consist of graphite and diamond microstructures and thus possess properties that lie between the two. Amorphous and nanocrystalline carbon films can exist in different kinds of matrices and are usually doped with a large amount of hydrogen. Thus, carbon films can be classified as polymer-like, diamond-like, or graphite-like based on the main binding framework. In order to characterize the structure, either direct bonding characterization methods or the indirect bonding characterization methods are employed. Examples of techniques utilized to identify the chemical bonds and microstructure of amorphous and nanocrystalline carbon films include optical characterization methods such as Raman spectroscopy, Ultra-violet (UV) Raman spectroscopy, and infrared spectroscopy, electron spectroscopic and microscopic methods such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, transmission electron microscopy, and electron energy loss spectroscopy, surface morphology characterization techniques such as scanning probe microscopy (SPM) as well as other characterization methods such as X-ray reflectivity and nuclear magnetic resonance. In this review, the structures of various types of amorphous carbon films and common characterization techniques are described

Effects of dopants on the amorphous-to-fcc transition in Ge{sub 2}Sb{sub 2}Te{sub 5} thin films

Energy Technology Data Exchange (ETDEWEB)

Privitera, S. [R and D Department, Micro, Power, Analog (MPA) Group, STMicroelectronics, MP8, Stradale Primosole 50, 95121 Catania (Italy)]. E-mail: stefania.privitera@st.com; Rimini, E. [Istituto di Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Stradale Primosole 50, 95121 Catania (Italy); Bongiorno, C. [Istituto di Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Stradale Primosole 50, 95121 Catania (Italy); Pirovano, A. [FTM, Advanced R and D, NVMTD, STMicroelectronics, Via Olivetti 2, 20041, Agrate Brianza (Italy); Bez, R. [FTM, Advanced R and D, NVMTD, STMicroelectronics, Via Olivetti 2, 20041, Agrate Brianza (Italy)

2007-04-15

The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge{sub 2}Sb{sub 2}Te{sub 5} thin films doped by ion implantation with nitrogen, oxygen or fluorine at different concentrations. Enhancement of the thermal stability has been observed in O and N amorphous doped Ge{sub 2}Sb{sub 2}Te{sub 5}. Larger effects have been found in the case of nitrogen doping. On the contrary, doping with Fluorine produced a decrease in the crystallization temperature. The electrical properties have been related to the structural phase change through in situ transmission electron microscopy analysis. The comparison between undoped and doped Ge{sub 2}Sb{sub 2}Te{sub 5} shows that the introduction of oxygen or nitrogen modifies in a different way the kinetics of the amorphous-to-fcc transition and gives new insight on the effects of doping with light elements in GeSbTe alloys.

Different photoluminescent properties of binary and ternary europium chelates doped in PMMA

International Nuclear Information System (INIS)

Liu Hongguo; Park, Seongtae; Jang, Kiwan; Zhang Wansong; Seo, Hyo-Jin; Lee, Yong-Ill

2003-01-01

Two kinds of europium-β-diketone chelates, binary Eu(DBM) 3 and ternary Eu(DBM) 3 phen were doped in poly(methyl methacrylate) (PMMA). These chelates show very different photoluminescent (PL) behaviors: the hypersensitive 5 D 0 → 7 F 2 emission bands of Eu(DBM) 3 phen change slightly with the molar ratios, while those of Eu(DBM) 3 change obviously and regularly with the molar ratios. The results of the luminescent lifetimes of 5 D 0 levels show that the binary chelate exists as two kinds of species in the doped systems, and the lifetimes and contents of each species change with the molar ratios, while the ternary chelate exists as one kind of species in the doped systems. X-ray diffraction (XRD) patterns of the binary chelate doped systems give some diffraction peaks that are different from those of pure chelate and change with the molar ratios, indicating new kinds of crystal structures formed, and consequently, the first coordination sphere of Eu 3+ ion changes; while those of the ternary chelate doped systems just show amorphous diffraction halos of the host, indicating that the ternary chelate exist in an amorphous state and disperse well in the host. The FTIR spectra of PMMA also change gradually with increasing the molar ratios of the doped two kinds of chelates, and the XRD patterns show that the amorphous halos of PMMA in the doped systems are different from those of pure PMMA and change with the molar ratios, too, suggesting the interaction between the guest and the host

Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

International Nuclear Information System (INIS)

Gontad, F.; Conde, J.C.; Filonovich, S.; Cerqueira, M.F.; Alpuim, P.; Chiussi, S.

2013-01-01

We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p + -nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm 2 is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm 2 promote partial crystallization of the amorphous structures

Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers

Energy Technology Data Exchange (ETDEWEB)

Gontad, F., E-mail: fran_gontad@yahoo.es [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Conde, J.C. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain); Filonovich, S.; Cerqueira, M.F.; Alpuim, P. [Department of Physics, University of Minho, Campus de Azurém, 4800-058 Guimarães (Portugal); Chiussi, S. [Applied Physics Department, University of Vigo, E.I. Industrial, Campus de As Lagoas, Marcosende, E-36310, Vigo (Spain)

2013-06-01

We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystallization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p{sup +}-nc-Si:H films without damaging the substrate. - Highlights: • An efficient dehydrogenation is possible through excimer laser annealing. • 140 mJ/cm{sup 2} is enough for dehydrogenation without significant changes in doping profile. • Fluences up to 300 mJ/cm{sup 2} promote partial crystallization of the amorphous structures.

Noise and degradation of amorphous silicon devices

NARCIS (Netherlands)

Bakker, J.P.R.

2003-01-01

Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenated amorphous silicon (a-Si:H). The material is applied in sandwich structures and in thin-film transistors (TFTs). In a sandwich configuration of an intrinsic layer and two thin doped layers, the

The nitrogen doping effect on the properties of Ge-In-Sb-Te phase-change recording media investigated by blue-light laser

International Nuclear Information System (INIS)

Yeh, T.-T.; Hsieh, T.-E.; Shieh, H.-P.D.

2005-01-01

This work investigates the thermal, optical and recrystallization properties as well as the microstructure of nitrogen-doped Ge-In-Sb-Te (GIST) phase-change material when irradiated by blue-light laser. The experimental results showed that nitrogen doping at the condition of N 2 /Ar sputtering gas flow ratio equals to 3% might enhance the recrystallization speed of GIST recording layer up to 1.5 times. However, the disk failed when too much nitrogen (N 2 /Ar ≥ 5.0%) was introduced. The data obtained by differential scanning calorimetry, X-ray diffraction and ellipsometry revealed changes of thermal and optical properties due to the nitrogen doping in GIST. When appropriate amount of nitrogen was added, the activation energy (E a ) of amorphous-crystalline phase transition of GIST decreased and the optical constants of amorphous and crystalline phases (except the k value of amorphous phase) gradually reduced with the increase of wavelength in the range of 600-750 nm. Modulation simulation based on the reflectively of doped GIST layers obtained from static test indicated that appropriate nitrogen doping benefited the signal characteristics of optical disks. Transmission electron microscopy observed numerous tiny precipitates uniformly distributed in the doped GIST layers. These were believed to be nitride particles generated by nitrogen doping that might offer the preferential sites for amorphous-crystalline phase transition so that the recrystallization speed was accelerated

Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

International Nuclear Information System (INIS)

Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

2015-01-01

The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

Self-consistent modeling of amorphous silicon devices

International Nuclear Information System (INIS)

Hack, M.

1987-01-01

The authors developed a computer model to describe the steady-state behaviour of a range of amorphous silicon devices. It is based on the complete set of transport equations and takes into account the important role played by the continuous distribution of localized states in the mobility gap of amorphous silicon. Using one set of parameters they have been able to self-consistently simulate the current-voltage characteristics of p-i-n (or n-i-p) solar cells under illumination, the dark behaviour of field-effect transistors, p-i-n diodes and n-i-n diodes in both the ohmic and space charge limited regimes. This model also describes the steady-state photoconductivity of amorphous silicon, in particular, its dependence on temperature, doping and illumination intensity

The phase-change kinetics of amorphous Ge2Sb2Te5 and device characteristics investigated by thin-film mechanics

International Nuclear Information System (INIS)

Cho, Ju-Young; Kim, Dohyung; Park, Yong-Jin; Yang, Tae-Youl; Lee, Yoo-Yong; Joo, Young-Chang

2015-01-01

For high switching speed and high reliability of phase-change random access memory (PcRAM), we need to identify materials that enable fast crystallization at elevated temperatures but are stable at and above room temperature. Achieving this goal requires a breakthrough in our understanding of the unique crystallization kinetics of amorphous phase change materials as a fragile glass, described as the non-Arrhenius behavior of atomic mobility. It is a highly rewarding task to unravel the unconventional crystallization kinetics and related properties, because these properties can be utilized to predict the device characteristics. This manuscript utilizes the thin-film mechanics to investigate the crystallization kinetics of amorphous Ge 2 Sb 2 Te 5 phase-change materials doped with Al, Bi, C and N, which is an effective method to analyze the structural changes in amorphous materials. Crystallization temperature, super-cooled liquid region, glass transition temperature and fragility are measured to describe the crystallization kinetics tuned by doping; characteristic fragile-to-strong transition is observed for C and N dopings due to their structural feature as an interstitial dopant. Consequently, doping effects on the phase stability and atomic mobility manifested by the crystallization temperature and the super-cooled liquid region (or 1/fragility) successfully correspond with PcRAM characteristics, i.e., reliability and switching speed, respectively

Effect of substrate temperature on corrosion performance of nitrogen doped amorphous carbon thin films in NaCl solution

Energy Technology Data Exchange (ETDEWEB)

Khun, N.W. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, E., E-mail: MEJLiu@ntu.edu.s [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2009-07-01

Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on p-Si substrates by DC magnetron sputtering at varying substrate temperature from room temperature (RT) to 300 {sup o}C. The bonding structure, surface morphology and adhesion strength of the a-C:N films were investigated by using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch testing. The corrosion behavior of the a-C:N films was evaluated by potentiodynamic polarization test in a 0.6 M NaCl solution. The results indicated that the corrosion resistance of the films depended on the sp{sup 3}-bonded cross-link structure that was significantly affected by the substrate temperature.

Effect of substrate temperature on corrosion performance of nitrogen doped amorphous carbon thin films in NaCl solution

International Nuclear Information System (INIS)

Khun, N.W.; Liu, E.

2009-01-01

Nitrogen doped amorphous carbon (a-C:N) thin films were deposited on p-Si substrates by DC magnetron sputtering at varying substrate temperature from room temperature (RT) to 300 o C. The bonding structure, surface morphology and adhesion strength of the a-C:N films were investigated by using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch testing. The corrosion behavior of the a-C:N films was evaluated by potentiodynamic polarization test in a 0.6 M NaCl solution. The results indicated that the corrosion resistance of the films depended on the sp 3 -bonded cross-link structure that was significantly affected by the substrate temperature.

Diffusion of Gold and Platinum in Amorphous Silicon

CERN Multimedia

Voss, T L

2002-01-01

By means of radiotracer experiments the diffusion of Au and Pt in radio-frequency-sputtered amorphous silicon (a-Si) was investigated. Specimens of a-Si with homogeneous doping concentrations of Au or Pt in the range 0$\\, - \\,$1,7~at.\\% were produced by co-sputtering of Si and Au or Pt, respectively. An additional tiny concentration of radioactive $^{195}$Au or $^{188}$Pt, about 10~at.ppm, was implanted at ISOLDE. The resulting Gaussian distribution of the implanted atoms served as a probe for measuring diffusion coefficients at various doping concentrations. It was found that for a given doping concentration the diffusion coefficients show Arrhenius-type temperature dependences, where the diffusion enthalpy and the pre-exponential factor depend on the doping concentration. From these results it was concluded that in a-Si Au and Pt undergo direct, interstitial-like diffusion that is retarded by temporary trapping of the radiotracer atoms at vacancy-type defects with different binding enthalpies. In the case o...

Toward electron exit wave tomography of amorphous materials at atomic resolution

Energy Technology Data Exchange (ETDEWEB)

Borisenko, Konstantin B., E-mail: konstantin.borisenko@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Moldovan, Grigore [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Kirkland, Angus I., E-mail: angus.kirkland@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Van Dyck, Dirk [Department of Physics, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp (Belgium); Tang, Hsin-Yu; Chen, Fu-Rong [Department of Engineering and System Science, National Tsing Hua University, Kuang-Fu Road, 300 Hsinchu, Taiwan (China)

2012-09-25

Highlights: Black-Right-Pointing-Pointer We suggest a novel electron exit wave tomography approach to obtain three dimensional atomic structures of amorphous materials. Black-Right-Pointing-Pointer Theoretical tests using a model of amorphous Si doped with Au show that it is feasible to reconstruct both Si and Au atoms positions. Black-Right-Pointing-Pointer Reconstructions of the strongly scattering Au atoms positions appear to be insensitive to typical experimental errors. - Abstract: We suggest to use electron exit wave phase for tomographic reconstruction of structure of Au-doped amorphous Si with atomic resolution. In the present theoretical investigation into the approach it is found that the number of projections and the accuracy of defocus in the focal series restoration are the main factors that contribute to the final resolution. Although resolution is ultimately limited by these factors, phase shifts in the exit wave are sufficient to identify the position of Au atoms in an amorphous Si needle model, even when only 19 projections with defocus error of 4 nm are used. Electron beam damage will probably further limit the resolution of such tomographic reconstructions, however beam damage can be mitigated using lower accelerating voltages.

Bringing nanomagnetism to the mesoscale with artificial amorphous structures

Science.gov (United States)

Muscas, G.; Brucas, R.; Jönsson, P. E.

2018-05-01

In the quest for materials with emergent or improved properties, an effective route is to create artificial superstructures. Novel properties emerge from the coupling between the phases, but the strength of this coupling depends on the quality of the interfaces. Atomic control of crystalline interfaces is notoriously complicated and to elude that obstacle, we suggest here an all-amorphous design. Starting from a model amorphous iron alloy, we locally tune the magnetic behavior by creating boron-doped regions by means of ion implantation through a lithographic mask. This process preserves the amorphous environment, creating a non-topographic magnetic superstructure with smooth interfaces and no structural discontinuities. The absence of inhomogeneities acting as pinning centers for the magnetization reversal is demonstrated by the formation of magnetic vortexes for ferromagnetic disks as large as 20 µm in diameter embedded within a paramagnetic matrix. Rigid exchange coupling between two amorphous ferromagnetic phases in a microstructured sample is evidenced by an investigation involving first-order reversal curves. The sample consists of a soft matrix with embedded elements constituting a hard phase where the anisotropy originates from an elongated shape of the elements. We provide an intuitive explanation for the micrometer-range exchange coupling mechanism and discuss how to tailor the properties of all-amorphous superstructures.

Electron paramagnetic resonance and Raman spectroscopy studies on carbon-doped MgB2 superconductor nanomaterials

International Nuclear Information System (INIS)

Bateni, Ali; Somer, Mehmet; Erdem, Emre; Repp, Sergej; Weber, Stefan; Acar, Selcuk; Kokal, Ilkin; Häßler, Wolfgang

2015-01-01

Undoped and carbon-doped magnesium diboride (MgB 2 ) samples were synthesized using two sets of mixtures prepared from the precursors, amorphous nanoboron, and as-received amorphous carbon-doped nanoboron. The microscopic defect structures of carbon-doped MgB 2 samples were systematically investigated using X-ray powder diffraction, Raman and electron paramagnetic resonance spectroscopy. Mg vacancies and C-related dangling-bond active centers could be distinguished, and sp 3 -hybridized carbon radicals were detected. A strong reduction in the critical temperature T c was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra

Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

Science.gov (United States)

Simov, K. R.; Glans, P.-A.; Jenkins, C. A.; Liberati, M.; Reinke, P.

2018-01-01

Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn-Mn bonding.

Impurity-doped micro-lasers

NARCIS (Netherlands)

Pollnau, Markus

2013-01-01

Recently rare-earth-ion-doped dielectric channel waveguides have proven their ability to generate highly efficient laser output in the fundamental mode. Here we review our recent achievements obtained in crystalline potassium double tungstates and amorphous aluminum oxide.

Optical evidence for a self-propagating molten buried layer in germanium films upon nanosecond laser irradiation

International Nuclear Information System (INIS)

Vega, F.; Chaoui, N.; Solis, J.; Armengol, J.; Afonso, C.N.

2005-01-01

This work describes the phase transitions occurring at the film-substrate interface of amorphous germanium films upon nanosecond laser-pulse-induced melting of the surface. Films with thickness ranging from 50 to 130 nm deposited on glass substrates were studied. Real-time reflectivity measurements with subnanosecond time resolution performed both at the air-film and film-substrate interfaces were used to obtain both surface and in-depth information of the process. In the thicker films (≥80 nm), the enthalpy released upon solidification of a shallow molten surface layer induces a thin buried liquid layer that self-propagates in-depth towards the film-substrate interface. This buried liquid layer propagates with a threshold velocity of 16±1 m/s and causes, eventually, melting at the film-substrate interface. In the thinnest film (50 nm) there is no evidence of the formation of the buried layer. The presence of the self-propagating buried layer for films thicker than 80 nm at low and intermediate laser fluences is discussed in terms of the thermal gradient in the primary melt front and the heat released upon solidification

Stress-induced buried waveguides in the 0.8CaSiO3–0.2Ca3(PO4)2 eutectic glass doped with Nd3+ ions

International Nuclear Information System (INIS)

Sola, D.; Martínez de Mendibil, J.; Vázquez de Aldana, J.R.; Lifante, G.; Balda, R.; Aza, A.H. de; Pena, P.; Fernández, J.

2013-01-01

In this work the fabrication of buried optical waveguides by femtosecond laser inscription in the 0.8CaSiO 3 –0.2Ca 3 (PO 4 ) 2 eutectic glass doped with Nd 3+ ions is reported. The glass samples were prepared by melting the eutectic powder mixture in a Pt–10 wt.% Rh crucible at 1600 °C and pouring it in a preheated brass mould. Afterwards, the glass was annealed to release the inner stresses. Buried waveguides were fabricated by focusing beneath the surface a pulsed Ti:sapphire laser with a pulsewidth of 120 fs working at 1 kHz. Two adjacent parallel tracks were written to define a region where an increase in the refractive index occurs. The effects produced by the variation of the laser pulse energy as well as the lateral separation between tracks, scanning speed and focusing distance were studied. After the laser processing, the near-field intensity distribution at 633 nm of the waveguide's modes was studied demonstrating the confinement of both, the TE as the TM polarizations. In order to diminish the losses induced by colour centres absorption, heat treatments were carried out in the samples. The waveguide's modes were compared with respect to the samples without heat treatments. The spectroscopic properties of the neodymium ions have been characterized to evaluate in what extent their optical properties could be modified by the waveguide fabrication process and to elucidate the potential application of such waveguides as integrated laser sources.

Studies of pulsed laser melting and rapid solidification using amorphous silicon

International Nuclear Information System (INIS)

Lowndes, D.H.; Wood, R.F.

1984-06-01

Pulsed-laser melting of ion implantation-amorphized silicon layers, and subsequent solidification were studied. Measurements of the onset of melting of amorphous silicon layers and of the duration of melting, and modified melting model calculations demonstrated that the thermal conductivity, K/sub a/, of amorphous silicon is very low (K/sub a/ approx. = 0.02 W/cm-K). K/sub a/ is also the dominant parameter determining the dynamical response of amorphous silicon to pulsed laser radiation. TEM indicates that bulk (volume) nucleation occurs directly from the highly undercooled liquid silicon that can be prepared by pulsed laser melting of amorphous silicon layers at low laser energy densities. A modified thermal melting model is presented. The model calculations demonstrate that the release of latent heat by bulk nucleation occurring during the melt-in process is essential to obtaining agreement with observed depths of melting. These calculations also show that this release of latent heat accompanying bulk nucleation can result in the existence of buried molten layers of silicon in the interior of the sample after the surface has solidified. The bulk nucleation implies that the liquid-to-amorphous phase transition (produced using picosecond or uv nanosecond laser pulses) cannot be explained using purely thermodynamic considerations

Buried Waste Integrated Demonstration

International Nuclear Information System (INIS)

1994-03-01

The Buried Waste Integrated Demonstration (BWID) supports the applied research, development, demonstration, and evaluation of a suite of advanced technologies that offer promising solutions to the problems associated with the remediation of buried waste. BWID addresses the difficult remediation problems associated with DOE complex-wide buried waste, particularly transuranic (TRU) contaminated buried waste. BWID has implemented a systems approach to the development and demonstration of technologies that will characterize, retrieve, treat, and dispose of DOE buried wastes. This approach encompasses the entire remediation process from characterization to post-monitoring. The development and demonstration of the technology is predicated on how a technology fits into the total remediation process. To address all of these technological issues, BWID has enlisted scientific expertise of individuals and groups from within the DOE Complex, as well as experts from universities and private industry. The BWID mission is to support development and demonstration of a suite of technologies that, when integrated with commercially-available technologies, forms a comprehensive, remediation system for the effective and efficient remediation of buried waste throughout the DOE Complex. BWID will evaluate and validate demonstrated technologies and transfer this information and equipment to private industry to support the Office of Environmental Restoration (ER), Office of Waste Management (WM), and Office of Facility Transition (FT) remediation planning and implementation activities

Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge

Directory of Open Access Journals (Sweden)

K. R. Simov

2018-01-01

Full Text Available Mn doping of group-IV semiconductors (Si/Ge is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.

High dose implantations of antimony for buried layer applications

International Nuclear Information System (INIS)

Gailliard, J.P.; Dupuy, M.; Garcia, M.; Roussin, J.C.

1978-01-01

Electrical and physical properties of high dose implantations of antimony in silicon have been studied for use in buried layer applications. The results have been obtained both on and oriented silicon wafers. Following implantations which lead to amorphization we perform an annealing at 600 0 C for 10 mn in order to recrystallize the layer. The observed electrical properties (μ, R) show that the concentration of electrically active antimony ions is greater than that predicted from the solubility of antimony in silicon. Further annealing (in the range 1050 0 - 1200 0 ) induces: firstly a precipitation of the Sb and secondly a diffusion and dissolution of the precipitates. There is a different evolution of the defects in the and silicon slices. T.E.M. reveals no defects in the wafers after one hour annealing at 1200 0 C, whereas defects and twins remain in wafers. Having obtained the evolution of R with time and temperature it is then determined the implantation and annealing conditions which lead to the low resistivity (R = 10) needed for buried layer applications. Results with very many industrially made devices are discussed

TEM study of amorphous alloys produced by ion implantation

International Nuclear Information System (INIS)

Johnson, E.; Grant, W.A.; Wohlenberg, P.; Hansen, P.; Chadderton, L.T.

1978-01-01

Ion implantation is a technique for introducing foreign elements into surface layers of solids. Ions, as a suitably accelerated beam, penetrate the surface, slow down by collisions with target atoms to produce a doped layer. This non-equilibrium technique can provide a wide range of alloys without the restrictions imposed by equilibrium phase diagrams. This paper reports on the production of some amorphous transition metal-metalloid alloys by implantation. Thinned foils of Ni, Fe and stainless steel were implanted at room temperature with Dy + and P + ions at doses between 10 13 - 10 17 ions/cm 2 at energies of 20 and 40 keV respectively. Transmission electron microscopy and selected area diffraction analysis were used to investigate the implanted specimens. Radial diffracted intensity measurements confirmed the presence of an amorphous implanted layer. The peak positions of the maxima are in good agreement with data for similar alloys produced by conventional techniques. Only certain ion/target combinations produce these amorphous layers. Implantations at doses lower than those needed for amorphization often result in formation of new crystalline phases such as an h.c.p. phase in nickel and a b.c.c. phase in stainless steel. (Auth.)

Electron paramagnetic resonance and Raman spectroscopy studies on carbon-doped MgB{sub 2} superconductor nanomaterials

Energy Technology Data Exchange (ETDEWEB)

Bateni, Ali; Somer, Mehmet, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr [Department of Chemistry, Koc University, RumelifeneriYolu, Sariyer, Istanbul (Turkey); Erdem, Emre, E-mail: emre.erdem@physchem.uni-freiburg.de, E-mail: msomer@ku.edu.tr; Repp, Sergej; Weber, Stefan [Institut für Physikalische Chemie, Universität Freiburg, Albertstr. 21, 79104 Freiburg (Germany); Acar, Selcuk; Kokal, Ilkin [Pavezyum Kimya Sanayi Dış Ticaret LTD. ŞTI., Tuzla, Istanbul (Turkey); Häßler, Wolfgang [Leibniz Institute for Solid State and Materials Research Dresden (IFW), P.O. Box 270116, 01171 Dresden (Germany)

2015-04-21

Undoped and carbon-doped magnesium diboride (MgB{sub 2}) samples were synthesized using two sets of mixtures prepared from the precursors, amorphous nanoboron, and as-received amorphous carbon-doped nanoboron. The microscopic defect structures of carbon-doped MgB{sub 2} samples were systematically investigated using X-ray powder diffraction, Raman and electron paramagnetic resonance spectroscopy. Mg vacancies and C-related dangling-bond active centers could be distinguished, and sp{sup 3}-hybridized carbon radicals were detected. A strong reduction in the critical temperature T{sub c} was observed due to defects and crystal distortion. The symmetry effect of the latter is also reflected on the vibrational modes in the Raman spectra.

STM imaging of buried P atoms in hydrogen-terminated Si for the fabrication of a Si:P quantum computer

Energy Technology Data Exchange (ETDEWEB)

Oberbeck, L.; Curson, N.J.; Hallam, T.; Simmons, M.Y.; Clark, R.G

2004-10-01

The fabrication of atomic-scale devices in silicon requires the encapsulation of dopant atoms which have been incorporated into the silicon surface at atomically precise positions using scanning tunnelling microscopy (STM) lithography. During silicon encapsulation, it is important to minimise segregation and diffusion of dopant atoms in order to retain the lithography defined device structure. Buried dopant imaging using STM is capable of imaging dopant atoms such as phosphorus after encapsulation in silicon several monolayers below the silicon surface, thus making it possible to check the integrity of the device structure. To fabricate buried phosphorus-doped samples, we use phosphine gas as a source of phosphorus atoms and incorporate the phosphorus atoms into a Si(001) surface during an annealing step. Molecular beam epitaxy is used to encapsulate the dopant atoms with several monolayers of silicon. After encapsulation, we hydrogen terminate the silicon surface in order to image the buried phosphorus dopants using STM. We show that a buried phosphorus atom appears as a bright glow superimposed on the silicon dimer structure in empty state STM images, whereas filled state images only show a very faint protrusion in the vicinity of the phosphorus atom. We highlight the importance of our results for the fabrication of atomic-scale devices.

STM imaging of buried P atoms in hydrogen-terminated Si for the fabrication of a Si:P quantum computer

International Nuclear Information System (INIS)

Oberbeck, L.; Curson, N.J.; Hallam, T.; Simmons, M.Y.; Clark, R.G.

2004-01-01

The fabrication of atomic-scale devices in silicon requires the encapsulation of dopant atoms which have been incorporated into the silicon surface at atomically precise positions using scanning tunnelling microscopy (STM) lithography. During silicon encapsulation, it is important to minimise segregation and diffusion of dopant atoms in order to retain the lithography defined device structure. Buried dopant imaging using STM is capable of imaging dopant atoms such as phosphorus after encapsulation in silicon several monolayers below the silicon surface, thus making it possible to check the integrity of the device structure. To fabricate buried phosphorus-doped samples, we use phosphine gas as a source of phosphorus atoms and incorporate the phosphorus atoms into a Si(001) surface during an annealing step. Molecular beam epitaxy is used to encapsulate the dopant atoms with several monolayers of silicon. After encapsulation, we hydrogen terminate the silicon surface in order to image the buried phosphorus dopants using STM. We show that a buried phosphorus atom appears as a bright glow superimposed on the silicon dimer structure in empty state STM images, whereas filled state images only show a very faint protrusion in the vicinity of the phosphorus atom. We highlight the importance of our results for the fabrication of atomic-scale devices

Structural, thermal and optical properties of Cu 2 + doped ...

Indian Academy of Sciences (India)

Pure and Cu 2 + doped methacrylic acid–ethyl acrylate (MAA:EA) copolymer films were prepared using thesolution cast technique. The amorphous feature of the copolymer was depicted using X-ray diffraction scans and degreeof crystallinity was found to vary with increasing doping content. UV–Vis absorption spectra in ...

Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

Science.gov (United States)

Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

2018-01-01

The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

Science.gov (United States)

Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

2017-06-01

N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

Structural and physical properties of transparent conducting, amorphous Zn-doped SnO2 films

Science.gov (United States)

Zhu, Q.; Ma, Q.; Buchholz, D. B.; Chang, R. P. H.; Bedzyk, M. J.; Mason, T. O.

2014-01-01

The structural and physical properties of conducting amorphous Zn-doped SnO2 (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO2), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO2, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO2 in which the Sn4+ ion is octahedrally coordinated by 6 O2- ions. The Sn4+ ion in these films however has a coordination number (CN) smaller by 2%-3% than that in c-SnO2, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO2, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn2+ ions. Under no circumstances is the CN around the Zn2+ ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 Å. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO2, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.

Biodiesel fuel production with solid amorphous-zirconia catalysis in fixed bed reactor

International Nuclear Information System (INIS)

Furuta, Satoshi; Matsuhashi, Hiromi; Arata, Kazushi

2006-01-01

Amorphous zirconia catalysts, titanium-, aluminum-, and potassium-doped zirconias, were prepared and evaluated in the transesterification of soybean oil with methanol at 250 deg. C, and the esterification of n-octanoic acid with methanol at 175-200 deg. C. Titanium- and aluminum-doped zirconias are promising solid catalysts for the production of biodiesel fuels from soybean oil because of their high performance, with over 95% conversion in both of the esterifications

Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films

Energy Technology Data Exchange (ETDEWEB)

Huang, Yu-Jen; Tsai, Min-Chuan; Wang, Chiung-Hsin; Hsieh, Tsung-Eong, E-mail: tehsieh@mail.nctu.edu.tw

2012-02-29

Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 Degree-Sign C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping. - Highlights: Black-Right-Pointing-Pointer Ce doping increased phase-change temperature of GST from 159 to 236 Degree-Sign C. Black-Right-Pointing-Pointer No suppression of resistivity level in amorphous Ce-doped GST. Black-Right-Pointing-Pointer Resistance ratio of amorphous and crystalline Ce-doped GST was preserved at 10{sup 5}. Black-Right-Pointing-Pointer p-type semiconducting behavior of GST was enhanced by Ce-doping. Black-Right-Pointing-Pointer Ce-doping improved the thermal stability of threshold voltage of GST PCM device.

Oxygen-doped Sb{sub 4}Te phase change films for high-temperature data retention and low-power application

Energy Technology Data Exchange (ETDEWEB)

Hu, Yifeng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); School of Mathematics and Physics, Jiangsu Teachers University of Technology, Changzhou 213001 (China); Sun, Mingcheng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)

2013-02-25

Highlights: Black-Right-Pointing-Pointer O-doped Sb{sub 4}Te phase-change films were reported. Black-Right-Pointing-Pointer The amorphous-to-crystalline transitions of O-doped Sb{sub 4}Te films were studied. Black-Right-Pointing-Pointer By doping oxygen, the stability of Sb{sub 4}Te films is improved greatly. Black-Right-Pointing-Pointer The resistance of the Sb{sub 4}Te films increases by doping oxygen. - Abstract: The amorphous-to-crystalline transitions of oxygen-doped Sb{sub 4}Te (STO) films are investigated by in situ film resistance measurements. The crystalline temperature and resistance of the oxygen-doped films increase. The analysis of X-ray diffractomer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the films with doping of a small amount of oxygen atoms can refine the grain size and form oxide, improving the resistance and thermal stability of phase change films. Excessive oxygen in Sb{sub 4}Te will make Te separate, resulting in deteriorating the stability. As a result, STO2 film has the relatively high activation energy for crystallization. The 10-year lifetime is raised from 29 Degree-Sign C of undoped Sb{sub 4}Te film to 102 Degree-Sign C of STO3 film. Phase transition from amorphous state to crystalline state is observed at relatively lower power, compared with a device using Ge{sub 2}Sb{sub 2}Te{sub 5} film.

A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer

International Nuclear Information System (INIS)

Wu Lijuan; Zhang Wentong; Zhang Bo; Li Zhaoji

2013-01-01

A novel silicon-on-insulator (SOI) high-voltage pLDMOS is presented with a partial interface equipotential floating buried layer (FBL) and its analytical model is analyzed in this paper. The surface heavily doped p-top layers, interface floating buried N + /P + layers, and three-step field plates are designed carefully in the FBL SOI pLDMOS to optimize the electric field distribution of the drift region and reduce the specific resistance. On the condition of ESIMOX (epoxy separated by implanted oxygen), it has been shown that the breakdown voltage of the FBL SOI pLDMOS is increased from −232 V of the conventional SOI to −425 V and the specific resistance R on,sp is reduced from 0.88 to 0.2424 Ω·cm 2 . (semiconductor devices)

The enhancement of the interdiffusion in Si/Ge amorphous artificial multilayers by additions of B and Au

International Nuclear Information System (INIS)

Park, B.; Spaepen, F.; Poate, J.M.; Jacobson, D.C.

1990-01-01

Amorphous Si/amorphous Ge artificial multilayers were prepared by ion beam sputtering. Boron or gold impurities were introduced into the Si/Ge multilayers by ion implantation or during the sputtering deposition. Diffusion coefficients were determined by measuring the decrease in the intensity of the first order X-ray diffraction peak resulting from the composition modulation. It was found that the interdiffusion of Si and Ge in their amorphous phase can be enhanced by doping. The enhancement factor is independent of the degree of structural relaxation, as observed by the decrease of diffusivity with annealing time, of the amorphous phase. A model is proposed that describes this behavior in terms of electronic effects, introduced by the dopants, on the pre-existing structural defects governing diffusion

Fabrication and characterization of contact layers in amorphous silicon solar cells

International Nuclear Information System (INIS)

Kolter, M.

1993-04-01

The production and characterisation of amorphous and microcrystalline n-doped layers (a-Si:H(n) and c-Si:H(n)) for thin film solar cells is described together contact investigations. The layers were produced in a plasma CVD. The electric conductivity was measured

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

International Nuclear Information System (INIS)

Kizu, Takio; Tsukagoshi, Kazuhito; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto

2016-01-01

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm"2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V_O) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V_O in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

Amorphous silicon as high index photonic material

Science.gov (United States)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

Buried Craters of Utopia

Science.gov (United States)

2003-01-01

MGS MOC Release No. MOC2-365, 19 May 2003Beneath the northern plains of Mars are numerous buried meteor impact craters. One of the most heavily-cratered areas, although buried, occurs in Utopia Planitia, as shown in this Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image. The history of Mars is complex; impact craters provide a tool by which to understand some of that history. In this case, a very ancient, cratered surface was thinly-buried by younger material that is not cratered at all. This area is near 48.1oN, 228.2oW; less than 180 km (112 mi) west of the Viking 2 lander site. Sunlight illuminates the scene from the lower left.

Refractive-index change caused by electrons in amorphous AsS and AsSe thin films doped with different metals by photodiffusion

International Nuclear Information System (INIS)

Nordman, Olli; Nordman, Nina; Pashkevich, Valfrid

2001-01-01

The refractive-index change caused by electrons was measured in amorphous AsS and AsSe thin films. Films were coated with different metals. Diffraction gratings were written by electron-beam lithography. The interactions of electrons in films with and without the photodiffusion of overcoated metal were compared. Incoming electrons caused metal atom and ion diffusion in both investigated cases. The metal diffusion was dependent on the metal and it was found to influence the refractive index. In some cases lateral diffusion of the metal was noticed. The conditions for applications were verified. Copyright 2001 Optical Society of America

Emission of blue light from hydrogenated amorphous silicon carbide

Science.gov (United States)

Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

1994-04-01

THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

Mössbauer and magnetic studies of surfactant mediated Ca-Mg doped ferrihydrite nanoparticles.

Science.gov (United States)

Layek, Samar; Mohapatra, M; Anand, S; Verma, H C

2013-03-01

Ultrafine (2-5 nm) particles of amorphous Ca-Mg co-doped ferrihydrite have been synthesized by surfactant mediated co-precipitation method. The evolution of the amorphous ferrihydrite by Ca-Mg co-doping is quite different from our earlier investigations on individual doping of Ca and Mg. Amorphous phase of ferrihydrite for the present study has been confirmed by X-ray diffraction (XRD) and Mössbauer spectroscopy at room temperature and low temperatures (40 K and 20 K). Hematite nanoparticles with crystallite size about 8, 38 and 70 nm were obtained after annealing the as-prepared samples at 400, 600 and 800 degrees C respectively in air atmosphere. Superparamagnetism has been found in 8 nm sized hematite nanoparticles which has been confirmed from the magnetic hysteresis loop with zero remanent magnetization and coercive field and also from the superparamagnetic doublet of its room temperature Mössbauer spectrum. The magnetic properties of the 38 and 70 nm sized particles have been studied by room temperature magnetic hysteresis loop measurements and Mössbauer spectroscopy. The coercive field in these hematite nanoparticles increases with increasing particle size. Small amount of spinel MgFe2O4 phase has been detected in the 800 degrees C annealed sample.

Structural Transformation upon Nitrogen Doping of Ultrananocrystalline Diamond Films by Microwave Plasma CVD

Directory of Open Access Journals (Sweden)

Chien-Chung Teng

2009-01-01

Full Text Available The molecular properties and surface morphology of undoped and N-doped ultra-nanocrystalline diamond (UNCD films deposited by microwave plasma CVD with addition of nitrogen are investigated with various spectroscopic techniques. The results of spatially resolved Raman scattering, ATR/FT-IR and XPS spectra show more amorphous and sp2/sp3 ratio characteristics in N-doped UNCD films. The surface morphology in AFM scans shows larger nanocrystalline diamond clusters in N-doped UNCD films. Incorporation of nitrogen into UNCD films has promoted an increase of amorphous sp2-bonded carbons in the grain boundaries and the size of nanocrystalline diamond grains that are well correlated to the reported enhancement of conductivity and structural changes of UNCD films.

Amorphous silicon films doped with BF3 and PF5

International Nuclear Information System (INIS)

Ortiz, A.; Muhl, S.; Sanchez, A.; Monroy, R.; Pickin, W.

1984-01-01

By using gaseous discharge process, thin films of hydrogenated amorphous silicon (a-Si:H) were produced. This process consists of Silane (SiH 4 ) decomposition at low pressure, in a chamber. (A.C.A.S.) [pt

Properties of p-type amorphous silicon carbide window layers prepared using boron trifluoride

Energy Technology Data Exchange (ETDEWEB)

Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

1993-03-01

One set (A) of undoped and three sets (B, C and D) of doped hydrogenated amorphous silicon carbide samples have been made in the framework of a research plan for obtaining high quality p-type window layers by radiofrequency glow discharge of silane-based gas mixtures. The samples of sets A and B were made using different RF-power-density to mass-flow ratios for various methane percentages in the gas mixture. The best carbon incorporation in the amorphous silicon lattice was obtained at the highest RF-power density. The properties of sets C and D, prepared using different RF-power densities and silane and methane proportions have been analysed as functions of the concentration of boron trifluoride with respect to silane. In both cases, the optical gap E[sub G], after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. The best conductivity obtained is 2x10[sup -7] ([Omega] cm)[sup -1]. IR spectra allow to associate these features with the structural quality of the films. (orig.)

The buried waste integrated demonstration

International Nuclear Information System (INIS)

Kostelnik, K.M.

1991-01-01

There are numerous locations throughout the Department of Energy (DOE) Complex where wastes have been buried in the ground or stored for future disposal. Much of this buried waste is contaminated with hazardous and radioactive materials. An extensive research program has been initiated at the Idaho National Engineering Laboratory (INEL) to develop and demonstrate advanced remediation techniques for DOE Complex buried waste. The purpose of the Buried Waste Integrated Demonstration (BWID), is to develop a scientifically sound and deployable remediation system consisting of advanced technologies which address the buried waste characteristics of the DOE Complex. This comprehensive remediation system win include technologies for the entire remediation cycle (cradle-to-grave). Technologies developed and demonstrated within the BWID will be transferred to the DOE Complex sites with buried waste, to private industry, and to universities. Multidirectional technology transfer is encouraged by the BWID. Identification and evaluation of plausible technological solutions are an ongoing activity of the BWID. A number of technologies are currently under development throughout the DOE Complex, private industry, and universities. Technology integration mechanisms have been established by BWID to facilitate collaborative research and demonstration of applicable remedial technologies for buried waste. Successful completion of the BWID will result in the development of a proven and deployable system at the INEL and other DOE Complex buried waste sites, thereby supporting the DOE Complex's environmental restoration objectives

Unlocking the Electrocatalytic Activity of Chemically Inert Amorphous Carbon-Nitrogen for Oxygen Reduction: Discerning and Refactoring Chaotic Bonds

DEFF Research Database (Denmark)

Zhang, Caihong; Zhang, Wei; Wang, Dong

2017-01-01

Mild annealing enables inactive nitrogen (N)-doped amorphous carbon (a-C) films abundant with chaotic bonds prepared by magnetron sputtering to become effective for the oxygen reduction reaction (ORR) by virtue of generating pyridinic N. The rhythmic variation of ORR activity elaborates well...... on the subtle evolution of the amorphous C−N bonds conferred by spectroscopic analysis....

InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation

International Nuclear Information System (INIS)

Zucker, J.E.; Jones, K.L.; Tell, B.; Brown-Goebeler, K.; Joyner, C.H.; Miller, B.I.; Young, M.G.

1992-01-01

Formation of buried InGaAsP/InP quantum well wave-guides by means of phosphorus ion implantation and thermal annealing during regrowth is demonstrated. Absorption spectra of implanted and unimplanted regions are used to estimate the induced index difference, which is of the order of 1% at 1.55μm. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique, we achieve a significant reduction in propagation loss for singlemode pin waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. In addition to reduced scattering loss, buried quantum well waveguides produced by ion implantation are more manufacturable because fewer and less-critical processing steps are involved. (author)

Influence of substrate temperature and silver-doping on the structural and optical properties of TiO_2 films

International Nuclear Information System (INIS)

Fischer, Dieter

2016-01-01

Evaporation of titanium together with activated oxygen is used to grow TiO_2 films and simultaneously with silver to grow Ag–TiO_2 films (5 at.% Ag) onto sapphire substrates at three different substrate temperatures: − 190, 30, and 200 °C. The obtained films were characterized by X-ray powder diffraction, Raman, X-ray photoelectron, ultraviolet–visible spectroscopy, and transmission electron microscope investigations. The properties of TiO_2 films varied with the substrate temperature. Amorphous, transparent TiO_2 films were grown at − 190 °C and opaque, polycrystalline films at 200 °C, respectively. Surprisingly, at room temperature black, amorphous TiO_2 films are obtained which transform at 350 °C into a mixture of the anatase and brookite polymorph. In the amorphous state of the TiO_2 films a predefined rutile arrangement is suggested by Raman investigations, and the contraction of the lattice constant c of anatase phases (tetragonal, space group I 4_1/amd) depending on the substrate temperature is experimentally observed. The silver-doped TiO_2 films deposited at − 190 and 30 °C contain Ag-particles with 2 nm in size inside the TiO_2 matrix, which after annealing segregate under increasing particle sizes. The silver-doping stabilizes the anatase polymorph and yields to reduced titanium species in the films especially during deposition at 30 °C. The Ag–TiO_2 films deposited at − 190 °C are transparent up to 350 °C. In the undoped as well as silver-doped TiO_2 films the rutile polymorph is directly formed at 200 °C as main phase. - Highlights: • At room temperature black, amorphous TiO_2 films are obtained. • A predefined rutile arrangement is suggested in amorphous TiO_2 films. • Annealed TiO_2 films crystallize to a mixture of the anatase and brookite polymorph. • In TiO_2 and Ag-doped TiO_2 films the rutile polymorph is directly formed at 200 °C. • Ag-doped TiO_2 films stabilize the anatase polymorph and reduced titanium

Amino acids as co-amorphous excipients for simvastatin and glibenclamide

DEFF Research Database (Denmark)

Laitinen, Riikka; Löbmann, Korbinian; Grohganz, Holger

2014-01-01

to a few drugs and amino acids. To facilitate the rational selection of amino acids, the practical importance of the amino acid coming from the biological target site of the drug (and associated intermolecular interactions) needs to be established. In the present study, the formation of co......-amorphous systems using cryomilling and combinations of two poorly water-soluble drugs (simvastatin and glibenclamide) with the amino acids aspartic acid, lysine, serine, and threonine was investigated. Solid-state characterization with X-ray powder diffraction, differential scanning calorimetry, and Fourier...... in the mixtures. Interestingly, a favorable effect by the excipients on the tautomerism of amorphous glibenclamide in the co-amorphous blends was seen, as the formation of the thermodynamically less stable imidic acid tautomer of glibenclamide was suppressed compared to that of the pure amorphous drug...

DOE's plan for buried transuranic (TRU) contaminated waste

International Nuclear Information System (INIS)

Mathur, J.; D'Ambrosia, J.; Sease, J.

1987-01-01

Prior to 1970, TRU-contaminated waste was buried as low-level radioactive waste. In the Defense Waste Management Plan issued in 1983, the plan for this buried TRU-contaminated waste was to monitor the buried waste, take remedial actions, and to periodically evaluate the safety of the waste. In March 1986, the General Accounting Office (GAO) recommended that the Department of Energy (DOE) provide specific plans and cost estimates related to buried TRU-contaminated waste. This plan is in direct response to the GAO request. Buried TRU-contaminated waste and TRU-contaminated soil are located in numerous inactive disposal units at five DOE sites. The total volume of this material is estimated to be about 300,000 to 500,000 m 3 . The DOE plan for TRU-contaminated buried waste and TRU-contaminated soil is to characterize the disposal units; assess the potential impacts from the waste on workers, the surrounding population, and the environment; evaluate the need for remedial actions; assess the remedial action alternatives; and implement and verify the remedial actions as appropriate. Cost estimates for remedial actions for the buried TRU-contaminated waste are highly uncertain, but they range from several hundred million to the order of $10 billion

Modification of the electronic properties of As2Se3 films by erbium using ion-plasma sputtering method

International Nuclear Information System (INIS)

Prikhodko, O.Yu.; Sarsembinov, Sh.Sh.; Ryaguzov, A.P.; Maksimova, S.Ya.; Chuprynin, A.S.

2003-01-01

At present one of the vital problems of semiconductor materials studies is production of new light emitting materials for fiber optics, namely for light-emitting diode, emitting at room temperature in the range of minimum absorption of quartz optic fiber. It is well-known that heterostructures based on amorphous semiconductors, containing large concentrations of rare-earth elements have such properties. The method of ion-plasma co-sputtering (IPCM) of the original and doping materials allows us to obtain amorphous semiconductor films with large impurity concentration. This method was used to produce amorphous films of chalcogenide vitreous semiconductors (ChVS), doped with impurities of different chemical nature. But the capability of IPCM for ChVS doping with rare-earth elements has not been studied well yet. Therefore it is interesting to obtain amorphous films of arsenic selenide doped with erbium using IPCM and study its electronic properties. The films were produced using high frequency (13.56 MHz) ion-plasma co-sputtering of combined target of vitreous As 2 Se 3 and a metal. The sputtering of the target was conducted in argon atmosphere. Er concentration in the films varied between 0 and 4 atomic percent. Amorphism of the structure of the obtained films was monitored using X-ray diffraction methods. Electrical and optical properties of Er-doped As 2 Se 3 films and the charge carrier transportation processes were studied. It was determined that doped films significantly differ from the pure ones in the values of main electronic parameters: conductivity, energy activation of conductivity, optical band-gap, drift mobility of electrons and holes and mobility activation energy. Note that common rules of change of electronic parameters of As 2 Se 3 films affected by Er doping agree with the rules, established during modification of As 2 Se 3 films with dopes of transition metals with incomplete 3d-shell (Fe, Ni). Analysis of the obtained results showed that doing

Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

International Nuclear Information System (INIS)

Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin

2014-01-01

This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V oc = 725 mV) and boron-doped passivated contacts (iV oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Hormones as doping in sports.

Science.gov (United States)

Duntas, Leonidas H; Popovic, Vera

2013-04-01

Though we may still sing today, as did Pindar in his eighth Olympian Victory Ode, "… of no contest greater than Olympia, Mother of Games, gold-wreathed Olympia…", we must sadly admit that today, besides blatant over-commercialization, there is no more ominous threat to the Olympic games than doping. Drug-use methods are steadily becoming more sophisticated and ever harder to detect, increasingly demanding the use of complex analytical procedures of biotechnology and molecular medicine. Special emphasis is thus given to anabolic androgenic steroids, recombinant growth hormone and erythropoietin as well as to gene doping, the newly developed mode of hormones abuse which, for its detection, necessitates high-tech methodology but also multidisciplinary individual measures incorporating educational and psychological methods. In this Olympic year, the present review offers an update on the current technologically advanced endocrine methods of doping while outlining the latest procedures applied-including both the successes and pitfalls of proteomics and metabolomics-to detect doping while contributing to combating this scourge.

The Stabilization of Amorphous Zopiclone in an Amorphous Solid Dispersion.

Science.gov (United States)

Milne, Marnus; Liebenberg, Wilna; Aucamp, Marique

2015-10-01

Zopiclone is a poorly soluble psychotherapeutic agent. The aim of this study was to prepare and characterize an amorphous form of zopiclone as well as the characterization and performance of a stable amorphous solid dispersion. The amorphous form was prepared by the well-known method of quench-cooling of the melt. The solid dispersion was prepared by a solvent evaporation method of zopiclone, polyvinylpyrrolidone-25 (PVP-25), and methanol, followed by freeze-drying. The physico-chemical properties and stability of amorphous zopiclone and the solid dispersion was studied using differential scanning calorimetry (DSC), infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), scanning electron microscopy (SEM), hot-stage microscopy (HSM), X-ray diffractometry (XRD), solubility, and dissolution studies. The zopiclone amorphous solid-state form was determined to be a fragile glass; it was concluded that the stability of the amorphous form is influenced by both temperature and water. Exposure of amorphous zopiclone to moisture results in rapid transformation of the amorphous form to the crystalline dihydrated form. In comparison, the amorphous solid dispersion proved to be more stable with increased aqueous solubility.

Stress-induced buried waveguides in the 0.8CaSiO{sub 3}–0.2Ca{sub 3}(PO{sub 4}){sub 2} eutectic glass doped with Nd{sup 3+} ions

Energy Technology Data Exchange (ETDEWEB)

Sola, D., E-mail: dsola@unizar.es [Centro de Física de Materiales, CSIC-UPV/EHU, P° Manuel de Lardizabal, 5, 20.018 San Sebastián (Spain); Martínez de Mendibil, J. [Departamento de Física de Materiales, C-04, Facultad de Ciencias, Universidad Autónoma de Madrid, 28.049 Madrid (Spain); Vázquez de Aldana, J.R. [Grupo de Óptica, Facultad de Ciencias, Universidad de Salamanca, 37.008 Salamanca (Spain); Lifante, G. [Departamento de Física de Materiales, C-04, Facultad de Ciencias, Universidad Autónoma de Madrid, 28.049 Madrid (Spain); Balda, R. [Centro de Física de Materiales, CSIC-UPV/EHU, P° Manuel de Lardizabal, 5, 20.018 San Sebastián (Spain); Departamento de Física Aplicada I, E.T.S. Ingeniería de Bilbao, UPV/EHU, Alda. de Urquijo s/n, 48.013 Bilbao (Spain); Aza, A.H. de; Pena, P. [Instituto de Cerámica y Vidrio, CSIC, C/Kelsen 5, 28.049 Madrid (Spain); Fernández, J. [Centro de Física de Materiales, CSIC-UPV/EHU, P° Manuel de Lardizabal, 5, 20.018 San Sebastián (Spain); Departamento de Física Aplicada I, E.T.S. Ingeniería de Bilbao, UPV/EHU, Alda. de Urquijo s/n, 48.013 Bilbao (Spain)

2013-08-01

In this work the fabrication of buried optical waveguides by femtosecond laser inscription in the 0.8CaSiO{sub 3}–0.2Ca{sub 3}(PO{sub 4}){sub 2} eutectic glass doped with Nd{sup 3+} ions is reported. The glass samples were prepared by melting the eutectic powder mixture in a Pt–10 wt.% Rh crucible at 1600 °C and pouring it in a preheated brass mould. Afterwards, the glass was annealed to release the inner stresses. Buried waveguides were fabricated by focusing beneath the surface a pulsed Ti:sapphire laser with a pulsewidth of 120 fs working at 1 kHz. Two adjacent parallel tracks were written to define a region where an increase in the refractive index occurs. The effects produced by the variation of the laser pulse energy as well as the lateral separation between tracks, scanning speed and focusing distance were studied. After the laser processing, the near-field intensity distribution at 633 nm of the waveguide's modes was studied demonstrating the confinement of both, the TE as the TM polarizations. In order to diminish the losses induced by colour centres absorption, heat treatments were carried out in the samples. The waveguide's modes were compared with respect to the samples without heat treatments. The spectroscopic properties of the neodymium ions have been characterized to evaluate in what extent their optical properties could be modified by the waveguide fabrication process and to elucidate the potential application of such waveguides as integrated laser sources.

The Blackfoot 111 buried geophone experiment

Energy Technology Data Exchange (ETDEWEB)

Cieslewicz, D.; Lawton, D.C. [Calgary Univ., AB (Canada). Dept. of Geology and Geophysics

1999-07-01

As an important difference between a VSP and a conventional survey is the presence of the near-surface layer in the latter, it is possible that overburden materials are particularly attenuative to shear waves, causing an observed narrower bandwidth of converted waves in a seismic experiment conducted in the Blackfoot oil field. The Blackfoot III buried geophone experiment tested this hypothesis by recording data with three component geophones buried to various depths in the near surface. By avoiding a portion of the near surface, buried geophones might avoid a certain amount of attenuation, resulting in a better bandwidth and hence vertical resolution for P-S reflections in particular. Accessory seismic studies of near-surface velocity and impedance were made using the buried geophone data, made possible by the unique geometry of the experiment. The P-P processed data had comparable data quality at all geophone depths, whereas the processed surface P-S data had superior quality over data from the buried phones. This was a result of greater amounts of mode leakage and lower raw reflection amplitudes in the buried phones. No systematic improvement in P-S or P-P reflection bandwidth was noted for deeper geophones; inconsistent geophone coupling was partly a factor in this observation. Raw reflection amplitudes through the near surface are controlled mainly by the impedance of near-surface sediments. Near-surface velocities are typical for unconsolidated overburden for the western 2/3 of the buried receiver line, but increases to values more typical of unweathered bedrock for the eastern 1/3. This probably shows a thinning of the overburden layer in this area. 2 refs.

Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

International Nuclear Information System (INIS)

D'Angelo, D.; Piro, A.M.; Mirabella, S.; Bongiorno, C.; Romano, L.; Terrasi, A.; Grimaldi, M.G.

2007-01-01

Transmission Electron Microscopy was combined with Time Resolved Reflectivity to study the amorphous-crystalline (a-c) interface evolution during Solid Phase Epitaxy Regrowth (SPER) of Si 0.83 Ge 0.17 films deposited on Si by Molecular Beam Epitaxy and amorphized with Ge + ion implantation. Starting from the Si/SiGe interface, a 20 nm thick layer regrows free of defects with the same SPER rate of pure Si. The remaining SiGe regrows with planar defects and dislocations, accompanied by a decrease of the SPER velocity. The sample was also studied after implantation with B or P. In these cases, the SPER rate raises following the doping concentration profile, but no difference in the defect-free layer thickness was observed compared to the un-implanted sample. On the other hand, B or P introduction reduces the a-c interface roughness, while B-P co-implantation produces roughness comparable to the un-implanted sample

Photocatalysis with chromium-doped TiO2: Bulk and surface doping

KAUST Repository

Ould-Chikh, Samy

2014-04-15

The photocatalytic properties of TiO2 modified by chromium are usually found to depend strongly on the preparation method. To clarify this problem, two series of chromium-doped titania with a chromium content of up to 1.56 wt % have been prepared under hydrothermal conditions: the first series (Cr:TiO2) is intended to dope the bulk of TiO2, whereas the second series (Cr/TiO2) is intended to load the surface of TiO2 with Cr. The catalytic properties have been compared in the photocatalytic oxidation of formic acid. Characterization data provides evidence that in the Cr/TiO2 catalysts chromium is located on the surface of TiO2 as amorphous CrOOH clusters. In contrast, in the Cr:TiO 2 series, chromium is mostly dissolved in the titania lattice, although a minor part is still present on the surface. Photocatalytic tests show that both series of chromium-doped titania demonstrate visible-light-driven photo-oxidation activity. Surface-doped Cr/TiO2 solids appear to be more efficient photocatalysts than the bulk-doped Cr:TiO2 counterparts. It\\'s classified! The photocatalytic properties of TiO2 modified by chromium depend strongly on the preparation method. To clarify this problem, two types of modified titania are discussed: one with CrIII doped in the bulk and one with CrOOH clusters on the TiO2 surface (see picture). Both series show visible-light-driven photo-oxidation activity. However, surface modification appears to be a more efficient strategy. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy

Energy Technology Data Exchange (ETDEWEB)

Ruess, F J [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Goh, K E J [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Butcher, M J [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Reusch, T C G [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Oberbeck, L [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Weber, B [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Hamilton, A R [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Simmons, M Y [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia)

2007-01-31

We demonstrate the use of a scanning tunnelling microscope (STM) to pattern buried, highly planar phosphorus-doped silicon wires with widths down to the sub-10 nm level. We confirm the structural integrity of these wires using both buried dopant imaging techniques and ex situ electrical characterization. Four terminal I-V characteristics at 4 K show ohmic behaviour for all wires with resistivities between 1 and 24 x 10{sup -8} {omega} cm. Magnetotransport measurements reveal that conduction is dominated by disordered scattering with quantum corrections consistent with 2D weak localization theory. Our results show that these quantum corrections become more pronounced as the electron phase coherence length approaches the width of the wire.

Remote technologies for buried waste retrieval

International Nuclear Information System (INIS)

Smith, A.M.; Rice, P.

1995-01-01

The DOE is evaluating what should be done with this buried waste. Although the radioactive waste is not particularly mobile unless airborne, some of it was buried with volatile organics and/or other substances that tend to spread easily to surrounding soil or water tables. Volatile organics are hazardous materials (such as trichloroethylene) and require clean-up at certain levels in drinking water. There is concern that the buried volatile organics will spread into the water table and contaminate drinking water. Because of this, the DOE is considering options for handling this buried waste and reducing the risks of spreading or exposure. There are two primary options: containment and stabilization, or retrieval. Containment and stabilization systems would include systems that would leave the waste where it is, but contain and stabilize it so that the radioactive and hazardous materials would not spread to the surrounding soil, water, or air. For example, an in situ vitrification system could be used to melt the waste into a composite glass-like material that would not leach into the surrounding soil, water, or air. Retrieval systems are those that would remove the waste from its burial location for treatment and/or repackaging for long term storage. The objective of this project was to develop and demonstrate remote technologies that would minimize dust generation and the spread of airborne contaminants during buried waste retrieval. Remote technologies are essential for the retrieval of buried waste because they remove workers from the hazardous environment and provide greater automation, reducing the chances of human error. Minimizing dust generation is also essential to increased safety for the workers and the environment during buried waste retrieval. The main contaminants within the waste are micron-sized particles of plutonium and americium oxides, chlorides, and hydroxides, which are easily suspended in air and spread if disturbed

Amorphous nickel/cobalt tungsten sulfide electrocatalysts for high-efficiency hydrogen evolution reaction

Energy Technology Data Exchange (ETDEWEB)

Yang, Lun [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Wu, Xinglong, E-mail: hkxlwu@nju.edu.cn [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Department of Physics, NingBo University, NingBo 315001 (China); Zhu, Xiaoshu [Center for Analysis and Testing, Nanjing Normal University, Nanjing 210093 (China); He, Chengyu; Meng, Ming; Gan, Zhixing [Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics and Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

2015-06-30

Graphical abstract: - Highlights: • Amorphous nickel/cobalt tungsten sulfides were synthesized by a thermolytic process. • Amorphous NiWS and CoWS could realize hydrogen evolution efficiently. • Ni/Co promotion and annealing alter the porous structure and chemical bonding states. • Active sites on the surface of amorphous WS{sub x} are increased with Ni or Co doping. • Amorphous NiWS and CoWS have immense potentials in water splitting devices. - Abstract: The hydrogen evolution reaction (HER), an appealing solution for future energy supply, requires efficient and inexpensive electrocatalysts with abundant active surface sites. Although crystalline MoS{sub 2} and WS{sub 2} are promising candidates, their activity is dominated by edge sites. Amorphous tungsten sulfide prepared so far lacks the required active sites and its application has thus been hampered. In this work, nickel and cobalt incorporated amorphous tungsten sulfide synthesized by a thermolytic process is demonstrated to enhance the HER efficiency dramatically. The amorphous nickel tungsten sulfide (amorphous NiWS) annealed at 210 °C delivers the best HER performance in this system boasting a Tafel slope of 55 mV per decade and current density of 8.6 mA cm{sup −2} at 250 mV overpotential in a sustained test for 24 h. The introduction of Ni or Co into the catalyst and subsequent thermal treatment alters the porous structure and chemical bonding states thereby increasing the density of active sites on the surface.

Role of aluminum doping on phase transformations in nanoporous titania anodic oxides

Energy Technology Data Exchange (ETDEWEB)

Bayata, Fatma [Istanbul Bilgi University, Department of Mechanical Engineering, 34060, Eyup, Istanbul (Turkey); Ürgen, Mustafa, E-mail: urgen@itu.edu.tr [Istanbul Technical University, Department of Metallurgical and Materials Engineering, 34469, Maslak, Istanbul (Turkey)

2015-10-15

The role of aluminium doping on anatase to rutile phase transformation of nanoporous titanium oxide films were investigated. For this purpose pure and aluminum doped metal films were deposited on alumina substrates by cathodic arc physical deposition. The nanoporous anodic oxides were prepared by porous anodizing of pure and aluminum doped titanium metallic films in an ethylene glycol + NH{sub 4}F based electrolyte. Nanoporous amorphous structures with 60–80 nm diameter and 2–4 μm length were formed on the surfaces of alumina substrates. The amorphous undoped and Al-doped TiO{sub 2} anodic oxides were heat-treated at different temperatures in the range of 280–720 °C for the investigation of their crystallization behavior. The combined effects of nanoporous structure and Al doping on crystallization behavior of titania were investigated using X-ray diffraction (XRD) and micro Raman analysis. The results indicated that both Al ions incorporated into the TiO{sub 2} structure and the nanoporous structure retarded the rutile formation. It was also revealed that presence or absence of metallic film underneath the nanopores has a major contribution to anatase-rutile transformation. - Highlights: • Al-doped TiO{sub 2} nanopores were grown on alumina substrates using anodization method. • The crystallization behavior of nanoporous Al-doped TiO{sub 2} were investigated. • Al doping into nanoporous TiO{sub 2} retarded the anatase-rutile transformation. • Nanostructuring has significant role in controlling rutile formation temperature. • The absence of the metallic film under the nanopores delayed the rutile formation.

N-doped Sb2Te phase change materials for higher data retention

International Nuclear Information System (INIS)

Zhu Min; Wu Liangcai; Rao Feng; Song Zhitang; Li Xuelai; Peng Cheng; Zhou Xilin; Ren Kun; Yao Dongning; Feng Songlin

2011-01-01

Highlights: → Crystallization temperatures of the N-doped Sb 2 Te films increase remarkably. → The E a of N-doped Sb 2 Te films increase first, and then decrease. → The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN1 films. → The power consumption of PCRAM test cell based on Sb 2 TeN1 film is low. - Abstract: Crystallization temperatures of the Sb 2 Te films increase remarkably from 139.4 deg. C to 223.0 deg. C as the N 2 flow rates increasing from 0 sccm to 1.5 sccm. Electrical conduction activation energies for amorphous and crystalline states increase by doping nitrogen. A small amount of nitrogen atoms can locate at interstitial sites in the hexagonal structure, generating a strain field, and improving the thermal stability of amorphous state. The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN 1 films. Doping excessively high nitrogen in Sb 2 Te film will form nitride and make Te separate out. As a result, the activation energy for crystallization decreases instead, accompanying with the deterioration of thermal stability. The power consumption of PCRAM test cell based on Sb 2 TeN 1 film is ten times lower than that of PCRAM device using Ge 2 Sb 2 Te 5 films.

In situ vitrification on buried waste

International Nuclear Information System (INIS)

Bates, S.O.

1992-01-01

In situ vitrification (ISV) is being evaluated as a remedial treatment technology for buried mixed and transuranic (TRU) wastes at the Subsurface Disposal Area (SDA) at Idaho National Engineering Laboratory (INEL) and can be related to buried wastes at other Department of Energy (DOE) sites. There are numerous locations around the DOE Complex where wastes were buried in the ground or stored for future burial. The Buried Waste Program (BWP) is conducting a comprehensive Environmental Response, Compensation, and Liability Act (CERCLA) remedial investigation/feasibility study (RI/FS) for the Department of Energy - Field Office Idaho (DOE-ID). As part of the RI/FS, an ISV scoping study on the treatability of the SDA mixed low-level and mixed TRU waste is being performed for applicability to remediation of the waste at the Radioactive Waste Management Complex (RWMC). The ISV project being conducted at the INEL by EG ampersand G Idaho, Inc. consists of a treatability investigation to collect data to satisfy nine CERCLA criteria with regards to the SDA. This treatability investigation involves a series of experiments and related efforts to study the feasibility of ISV for remediation of mixed and TRU waste disposed of at the SDA

Origin and chemical composition of the amorphous material from the intergrain pores of self-assembled cubic ZnS:Mn nanocrystals

Science.gov (United States)

Stefan, Mariana; Vlaicu, Ioana Dorina; Nistor, Leona Cristina; Ghica, Daniela; Nistor, Sergiu Vasile

2017-12-01

We have shown in previous investigations that the low temperature collective magnetism observed in mesoporous cubic ZnS:Mn nanocrystalline powders prepared by colloidal synthesis, with nominal doping concentrations above 0.2 at.%, is due to the formation of Mn2+ clusters with distributed antiferromagnetic coupling localized in an amorphous phase found between the cubic ZnS:Mn nanocrystals. Here we investigate the composition, origin and thermal annealing behavior of this amorphous phase in such a mesoporous ZnS:Mn sample doped with 5 at.% Mn nominal concentration. Correlated analytical transmission electron microscopy, multifrequency electron paramagnetic resonance and Fourier transform infrared spectroscopy data show that the amorphous nanomaterial consists of unreacted precursor hydrated zinc and manganese acetates trapped inside the pores and on the surface of the cubic ZnS nanocrystals. The decomposition of the acetates under isochronal annealing up to 270 °C, where the mesoporous structure is still preserved, lead to changes in the nature and strength of the magnetic interactions between the aggregated Mn2+ ions. These results strongly suggest the possibility to modulate the magnetic properties of such transition metal ions doped II-VI mesoporous structures by varying the synthesis conditions and/or by post-synthesis thermochemical treatments.

Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.

Science.gov (United States)

Chang, Sheng-Po; Shan, Deng

2018-04-01

This paper presents the electrical characteristics of doping nitrogen in an amorphous InGaZnO thin film transistor. The IGZO:N film, which acted as a channel layer, was deposited using RF sputtering with a nitrogen and argon gas mixture at room temperature. The optimized parameters of the IGZO:N/IGZO TFT are as follows: threshold voltage is 0.5 V, field effect mobility is 14.34 cm2V-1S-1. The on/off current ratio is 106 and subthreshold swing is 1.48 V/decade. The positive gate bias stress stability of InGaZnO doping with nitrogen shows improvement compared to doping with oxygen.

Investigation of buried metal-organic interface with photoelectron spectroscopy (PES)

Energy Technology Data Exchange (ETDEWEB)

Vrdoljak, Pavo; Schoell, Achim; Reinert, Friedrich [Universitaet Wuerzburg, Experimentelle Physik II, 97074 Wuerzburg (Germany); Umbach, Eberhard [Forschungszentrum Karlsruhe, 76021 Karlsruhe (Germany)

2008-07-01

Metal-organic interfaces are of crucial importance for electronic devices since they influence the layer morphology, the electronic structure at contacts, and the charge carrier transport. Various investigations have addressed this issue from the viewpoint of surface science, applying model systems with thin organic films on flat (single crystalline or amorphous) metal substrates. The contacts in electronic devices, however, can be very different. This is mainly due to the morphological roughness of the interface in case of a metal top contact deposited on an organic layer and the possible influence on the electronic structure. In case of real contacts also interdiffusion has to be taken into account. However, surface sensitive techniques such as photoelectron spectroscopy (PES) and atomic force microscopy (AFM) can not immediately access the buried interface. To tackle this problem we have applied and optimised a lift-off technique which allows the removal of the metal top-contact in the UHV and analyse the interface between the contact and the organic film. We present first PES and AFM results of Au contacts deposited on PTCDA layers.

X-ray beam penetration in TXRF measurement of polycrystalline and amorphous surfaces

International Nuclear Information System (INIS)

Ghatak-Roy, A.R.; Hossain, T.Z.

2000-01-01

For TXRF measurement on single crystal silicon surface, it is generally agreed that the x-ray beam penetration is of the order of a few hundred Angstroms from the surface. However, for polycrystalline and amorphous surfaces - frequently used in semiconductor manufacturing there are evidences that x-rays penetrate much deeper revealing underlying layers. The evidences come from various measurements done with films such as silicon dioxide, silicon nitride and metal films such as aluminum, titanium and cobalt. A systematic study was carried out to help understand the issue further. Four sets of samples (on 8 inch wafers) were prepared to create layers buried under various deposited metal and non-metal layers. The metal layers created were aluminum, titanium and cobalt and the non-metal layers were silicon dioxide and silicon nitride. These samples were analyzed by TXRF under various angles and energies and the data were analyzed for signals from various buried layers along with their angular dependence. The results indicated deep penetration of x-ray beams. The samples were further analyzed by SIMS (Secondary Ion Mass Spectrometry) and some of them by ICP-MS (Inductively Coupled Plasma - Mass Spectrometry) to obtain information about their depth profiles. This was done in order to rule out the possibility of intermixing of layers during deposition. (author)

Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

International Nuclear Information System (INIS)

Fu Jing; Shen Xiang; Nie Qiuhua; Wang Guoxiang; Wu Liangcai; Dai Shixun; Xu Tiefeng; Wang, R.P.

2013-01-01

Highlights: ► Mg-doped Ge 2 Sb 2 Te 5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhancement thermal stability in Mg-doped GST films. - Abstract: Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhanced thermal stability in Mg-doped GST films.

Hydrogen doping of Indium Tin Oxide due to thermal treatment of hetero-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Ritzau, Kurt-Ulrich, E-mail: kurt-ulrich.ritzau@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Behrendt, Torge [Infineon Technologies, Max-Planck-Straße 5, 59581 Warstein (Germany); Palaferri, Daniele [Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot, Sorbonne Paris Cité, CNRS—UMR 7162, 75013 Paris (France); Bivour, Martin; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany)

2016-01-29

Indium Tin Oxide (ITO) layers in silicon hetero junction solar cells change their electrical and optical properties when exposed to temperature treatments. Hydrogen which effuses from underlying amorphous silicon layers is identified to dope the ITO layer. This leads to an additional increase in conductivity. In this way an almost isolating ITO can become degenerately doped through temperature treatments. The resulting carrier density in the range of 10{sup 20} cm{sup −3} leads to a substantial increase in free carrier absorption, which in turn leads to an increased parasitic absorption in the cell device. Thus hydrogen effusion in silicon hetero-junction (SHJ) solar cells does not only affect the degradation of amorphous silicon (a-Si:H) passivation of crystalline silicon (c-Si), but also the electrical and optical properties of both front and back ITO layers. This leads to the further design rule for SHJ solar cells, meaning that ITO properties have to be optimized in the state after modification during temperature treatment. - Highlights: • ITO is additionally doped by heat treatment of silicon hetero-junction solar cells. • The discovered effect turns an almost isolating ITO into a degenerately doped TCO. • TCO properties have to be considered as measured in the final cell.

Amorphous semiconductors for particle detection: Physical and technical limits and possibilities

International Nuclear Information System (INIS)

Equer, B.; Karar, A.

1989-01-01

Amorphous silicon is used, at an industrial level, in at least three different fields of application: photovoltaic cells, flat TV screens and line scanners for image processing. In the last two cases, thin film transistors (TFT) are produced with the same technology. Particle detection with amorphous silicon has been demonstrated, but present performances are limited to ionizing particles. In this paper, we discuss the physical basis of amorphous semiconductors and the possible future development that can be expected on the basis of the existing technology. It is concluded that substitution of amorphous for crystalline silicon brings no clear advantage, if possible at all. Positive assets are to be found in using specific properties of thin layers: large area structures like arrays of photodiodes with associated readout are in the state of the art; vertical structures alternating layers of differently doped materials and/or of different semiconductors can be produced by the same technique. The development of large area pixel detectors is technically feasible but requires a very large effort. A joint development effort with industries involved in X-ray detection and 2D photodetectors might be the most appropriate solution. (orig.)

Improving the electrochemical properties of nanosized LiFePO4-based electrode by boron doping

International Nuclear Information System (INIS)

Trócoli, Rafael; Franger, Sylvain; Cruz, Manuel; Morales, Julián; Santos-Peña, Jesús

2014-01-01

Highlights: • Thermal treatment of boron phosphate with LiFePO 4 provides electrode materials with high performance in lithium half-cells: 160 mAh·g -1 (90% of theoretical capacity) under C/5 rate • The products are composites containing boron-modified LiFePO 4 , FePO 4 and an amorphous phase with ionic diffusion properties • The boron treatment affects textural, conductive and lithium diffusivity of the electrode material leading to higher performance • A limited boron-doping of the phospholivine structure is observed - Abstract: Electrode materials with homogeneous distribution of boron were obtained by heating mixtures of nanosized carbon-coated lithium iron phosphate and BPO 4 in 3-9% weight at 700 °C. The materials can be described as nanocomposites containing i) LiFePO 4 , possibly doped with a low amount of boron, ii) FePO 4 and iii) an amorphous layer based on Li 4 P 2 O 7 -derived material that surrounds the phosphate particles. The thermal treatment with BPO 4 also triggered changes in the carbon coating graphitic order. Galvanostatic and voltammetric studies in lithium half-cells showed smaller polarisation, higher capacity and better cycle life for the boron-doped composites. For instance, one of the solids, called B 6 -LiFePO 4 , provided close to 150 and 140 mAhg -1 (87% and 81% of theoretical capacity, respectively) under C/2.5 and C regimes after several cycles. Improved specific surface area, carbon graphitization, conductivity and lithium ion diffusivity in the boron-doped phospholivine network account for this excellent rate performance. The properties of an amorphous layer surrounding the phosphate particles also account for such higher performance

Failure analysis of buried tanks

International Nuclear Information System (INIS)

Watkins, R.K.

1994-01-01

Failure of a buried tank can be hazardous. Failure may be a leak through which product is lost from the tank; but also through which contamination can occur. Failures are epidemic -- because buried tanks are out of sight, but also because designers of buried tanks have adopted analyses developed for pressure tanks. So why do pressure tanks fail when they are buried? Most failures of buried tanks are really soil failures. Soil compresses, or slips, or liquefies. Soil is not only a load, it is a support without which the tank deforms. A high water table adds to the load on the tank. It also reduces the strength of the soil. Based on tests, structural analyses are proposed for empty tanks buried in soils of various quality, with the water table at various levels, and with internal vacuum. Failure may be collapse tank. Such collapse is a sudden, audible inversion of the cylinder when the sidefill soil slips. Failure may be flotation. Failure may be a leak. Most leaks are fractures in the welds in overlap seams at flat spots. Flat spots are caused by a hard bedding or a heavy surface wheel load. Because the tank wall is double thick at the overlap, shearing stress in the weld is increased. Other weld failures occur when an end plate shears down past a cylinder; or when the tank is supported only at its ends like a beam. These, and other, failures can be analyzed with justifiable accuracy using basic principles of mechanics of materials. 10 figs

Kinetically Controlled Two-Step Amorphization and Amorphous-Amorphous Transition in Ice

Science.gov (United States)

Lin, Chuanlong; Yong, Xue; Tse, John S.; Smith, Jesse S.; Sinogeikin, Stanislav V.; Kenney-Benson, Curtis; Shen, Guoyin

2017-09-01

We report the results of in situ structural characterization of the amorphization of crystalline ice Ih under compression and the relaxation of high-density amorphous (HDA) ice under decompression at temperatures between 96 and 160 K by synchrotron x-ray diffraction. The results show that ice Ih transforms to an intermediate crystalline phase at 100 K prior to complete amorphization, which is supported by molecular dynamics calculations. The phase transition pathways show clear temperature dependence: direct amorphization without an intermediate phase is observed at 133 K, while at 145 K a direct Ih-to-IX transformation is observed; decompression of HDA shows a transition to low-density amorphous ice at 96 K and ˜1 Pa , to ice Ic at 135 K and to ice IX at 145 K. These observations show that the amorphization of compressed ice Ih and the recrystallization of decompressed HDA are strongly dependent on temperature and controlled by kinetic barriers. Pressure-induced amorphous ice is an intermediate state in the phase transition from the connected H-bond water network in low pressure ices to the independent and interpenetrating H-bond network of high-pressure ices.

Effect of nitrogen doping on the thermal conductivity of GeTe thin films

Energy Technology Data Exchange (ETDEWEB)

Fallica, Roberto; Longo, Massimo; Wiemer, Claudia [Laboratorio MDM, IMM-CNR, Agrate Brianza (Italy); Varesi, Enrico; Fumagalli, Luca; Spadoni, Simona [Micron Semiconductor Italia, Agrate Brianza (Italy)

2013-12-15

The 3{omega} method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (-25%) than in the crystalline one (-40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO{sub 2}, within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Possibility for hole doping into amorphous InGaZnO4 films prepared by RF sputtering

International Nuclear Information System (INIS)

Kobayashi, Kenkichiro; Kohno, Yoshiumi; Tomita, Yasumasa; Maeda, Yasuhisa; Matsushima, Shigenori

2011-01-01

Amorphous InGaZnO 4 (IGZO) films codoped with Al and N atoms were prepared by sputtering of targets consisting of IGZO and AlN powders in Ar + O 2 atmospheres. No hole-conductivity is seen in films deposited at 2 x 10 -3 Torr, whereas hole-conductivity is found in films deposited at 2 x 10 -2 Torr at radio frequency powers of 60-80 W in 0.3-0.6% O 2 atmospheres. The amorphous p-type IGZO film has the resistivity of 210 Wcm, hole-density of 7.5 x 10 17 cm -3 , and mobility of 0.4 cm 2 /Vs. The rectification characteristic is obtained for a device constructed from Au, amorphous p-type IGZO, and amorphous n-type IGZO. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

Directory of Open Access Journals (Sweden)

Suvarna R. Bathe

2014-01-01

Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

Compact Buried Ducts in a Hot-Humid Climate House

Energy Technology Data Exchange (ETDEWEB)

Mallay, Dave [Home Innovation Research Labs, Upper Marlboro, MD (United States)

2016-01-07

"9A system of compact, buried ducts provides a high-performance and cost-effective solution for delivering conditioned air throughout the building. This report outlines research activities that are expected to facilitate adoption of compact buried duct systems by builders. The results of this research would be scalable to many new house designs in most climates and markets, leading to wider industry acceptance and building code and energy program approval. The primary research question with buried ducts is potential condensation at the outer jacket of the duct insulation in humid climates during the cooling season. Current best practices for buried ducts rely on encapsulating the insulated ducts with closed-cell spray polyurethane foam insulation to control condensation and improve air sealing. The encapsulated buried duct concept has been analyzed and shown to be effective in hot-humid climates. The purpose of this project is to develop an alternative buried duct system that performs effectively as ducts in conditioned space - durable, energy efficient, and cost-effective - in a hot-humid climate (IECC warm-humid climate zone 3A) with three goals that distinguish this project: 1) Evaluation of design criteria for buried ducts that use common materials and do not rely on encapsulation using spray foam or disrupt traditional work sequences; 2) Establishing design criteria for compact ducts and incorporate those with the buried duct criteria to further reduce energy losses and control installed costs; 3) Developing HVAC design guidance for performing accurate heating and cooling load calculations for compact buried ducts.

X-ray absorption and emission study of amorphous and nanocrystalline GaN films containing buried N2

International Nuclear Information System (INIS)

Ruck, B.J.; Koo, A.; Budde, F.; Granville, S.; Trodahl, H.J.

2004-01-01

Full text: It has been predicted that amorphous gallium nitride (a-GaN) may possess a well-defined wide band gap, and is thus a potential substitute for the more expensive crystalline form used in short wavelength optoelectronic devices. Experimental investigations of disordered GaN have lent support to this prediction, but the picture is complicated because the properties of the amorphous state are not unique, and instead depend on the exact nature of the disordered structure. We have pioneered a novel ion-assisted growth technique that produces GaN films with a microstructure that ranges from nanocrystalline, with crystallite size of order 3 nm, to fully amorphous, depending on the exact growth conditions. This presentation will give an overview of our research into the properties of disordered GaN, including characterization of the physical structure of the films and their electronic energy levels, and also their photoconductive response. In particular I will focus on synchrotron radiation studies of samples with a range of different microstructures. X-ray absorption spectroscopy (XAS) and x-ray emission spectroscopy (XES) provide particularly powerful tools for examining a sample's empty and filled electronic energy levels, respectively. The details of the absorption and emission processes make it possible to obtain atom-specific information and to investigate the symmetry of the electronic levels. An example of the information obtained is shown. The thin solid curve shows XAS data, which is a measure of the nitrogen /7-projected density of unfilled electronic states in this nanocrystalline GaN sample. The thick solid curve shows XES data from the same sample, which provides complementary information about the occupied valence band states. Although the spectral features are broader in fully amorphous films than in nanocrystalline samples, a well-defined band gap exists in both cases with magnitude similar to that of crystalline GaN. There are additional feature

Structure and photoluminescence of boron and nitrogen co-doped carbon nanorods

Energy Technology Data Exchange (ETDEWEB)

Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Gao, B. [College of Computer Science, Chongqing University, Chongqing 400044 (China); Chongqing Municipal Education Examinations Authority, Chongqing 401147 (China); Zhong, X.X., E-mail: xxzhong@sjtu.edu.cn [Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

2016-07-15

Graphical abstract: Boron- and nitrogen- doped carbon nanorods. - Highlights: • The co-doping of nitrogen and boron in carbon nanorods. • The doping mechanism of nitrogen and boron in carbon nanorods by plasma. • Photoluminescence properties of nitrogen- and boron-doped carbon nanorods. - Abstract: Boron and nitrogen doped carbon nanorods (BNCNRs) were synthesized by plasma-enhanced hot filament chemical vapor deposition, where methane, nitrogen and hydrogen were used as the reaction gases and boron carbide was the boron source. The results of scanning electron microscopy, micro-Raman spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy indicate that boron and nitrogen can be used as co-dopants in amorphous carbon nanorods. Combined with the characterization results, the doping mechanism was studied. The mechanism is used to explain the formation of different carbon materials by different methods. The photoluminescence (PL) properties of BNCNRs were studied. The PL results show that the BNCNRs generate strong green PL bands and weak blue PL bands, and the PL intensity lowered due to the doping of boron. The outcomes advance our knowledge on the synthesis and optical properties of carbon-based nanomaterials and contribute to the development of optoelectronic nanodevices based on nano-carbon mateirals.

Lanthanum-doped mesostructured strontium titanates synthesized via sol–gel combustion route using citric acid as complexing agent

Energy Technology Data Exchange (ETDEWEB)

Sukpanish, Polthep [Department of Chemical Technology, Faculty of Science, Chulalongkorn University, Patumwan, Bangkok 10330 (Thailand); Center of Excellence on Petrochemical and Materials Technology (PETROMAT), Chulalongkorn University, Patumwan, Bangkok 10330 (Thailand); Lertpanyapornchai, Boontawee [Program in Petrochemistry, Faculty of Science, Chulalongkorn University, Patumwan, Bangkok 10330 (Thailand); Yokoi, Toshiyuki [Division of Catalytic Chemistry, Chemical Resources Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ngamcharussrivichai, Chawalit, E-mail: Chawalit.Ng@chula.ac.th [Department of Chemical Technology, Faculty of Science, Chulalongkorn University, Patumwan, Bangkok 10330 (Thailand); Center of Excellence on Petrochemical and Materials Technology (PETROMAT), Chulalongkorn University, Patumwan, Bangkok 10330 (Thailand)

2016-09-15

In the present work, a series of lanthanum-doped mesostructured strontium titanate (LMST) materials with different La/Sr ratios were synthesized via a sol–gel combustion method in the presence of citric acid as a complexing agent and Pluronic P123 as a templating agent. The effects of the amount of doped La and calcination temperature on the physicochemical properties of the LMSTs were examined using various techniques. Powder X-ray diffraction confirmed the substitution of La{sup 3+} into the SrTiO{sub 3} lattice, generating cubic perovskite La{sub x}Sr{sub 1−x}TiO{sub 3}, for the LMST materials calcined at 600 °C. The purity and crystallinity of the desired perovskite phase were enhanced by citric acid addition. The solubility limit of La{sup 3+} substitution at an La/Sr ratio of 0.43 was determined by structural and morphological studies. Increasing the La doping amount decreased the crystallinity and compositional homogeneity, because an La-rich amorphous phase segregated on the surface, but improved the mesoporosity. N{sub 2} physisorption measurements indicated that the LMSTs had a bimodal pore size distribution, of which the larger one was characterized by the crystallite size of mixed oxides, and the specific surface area of 24.9–37.3 m{sup 2} g{sup −1}. The formation of mesopores in the LMST materials synthesized via sol–gel combustion was explained based on a combination of soft- and hard-templating chemistries. - Highlights: • La-doped mesoporous SrTiO{sub 3} (LMST) was prepared first time via sol-gel combustion. • Pluronic P123 triblock copolymer was used as a cheap templating agent. • Citric acid as a complexing agent enhanced the purity and crystallinity of SrTiO{sub 3}. • The textural properties of LMST were improved by increasing the La doping amount. • Mesopore formation was explained by a combined soft- and hard-templating route.

The effect of preparation method on the proton conductivity of indium doped tin pyrophosphates

DEFF Research Database (Denmark)

Anfimova, Tatiana; Lie-Andersen, T.; Jensen, E. Pristed

2015-01-01

Indium doped tin pyrophosphates were prepared by three synthetic routes. A heterogeneous synthesis from metal oxides with excess phosphoric acid produces crystalline phosphate particles with a phosphorus rich amorphous phase along the grain boundaries. The amorphous phase prevents the agglomeration...... decrease in conductivity as well as significant agglomeration of the particles, as evident in TEM and from particle size distribution measurements. Homogeneous synthesis with soluble metal acetates or chlorides as precursors results in a single crystalline phase with a small particle size, but strongly...... agglomerated, and a low conductivity at 10- 7-10- 6 Scm- 1 level. Further impregnation of the agglomerates with phosphoric acid does not lead to formation of the phosphorus rich amorphous layers on the surface of the crystals. An intermediate conductivity of 10- 3 Scm- 1 was observed for the acid treated...

LUMINOUS BURIED ACTIVE GALACTIC NUCLEI AS A FUNCTION OF GALAXY INFRARED LUMINOSITY REVEALED THROUGH SPITZER LOW-RESOLUTION INFRARED SPECTROSCOPY

International Nuclear Information System (INIS)

Imanishi, Masatoshi

2009-01-01

We present the results of Spitzer Infrared Spectrograph 5-35 μm low-resolution spectroscopic energy diagnostics of ultraluminous infrared galaxies (ULIRGs) at z> 0.15, classified optically as non-Seyferts. Based on the equivalent widths of polycyclic aromatic hydrocarbon emission and the optical depths of silicate dust absorption features, we searched for signatures of intrinsically luminous, but optically elusive, buried active galactic nuclei (AGNs) in these optically non-Seyfert ULIRGs. We then combined the results with those of non-Seyfert ULIRGs at z IR 12 L sun . We found that the energetic importance of buried AGNs clearly increases with galaxy infrared luminosity, becoming suddenly discernible in ULIRGs with L IR > 10 12 L sun . For ULIRGs with buried AGN signatures, a significant fraction of infrared luminosities can be accounted for by the detected buried AGN and modestly obscured (A V < 20 mag) starburst activity. The implied masses of spheroidal stellar components in galaxies for which buried AGNs become important roughly correspond to the value separating red massive and blue less-massive galaxies in the local universe. Our results may support the widely proposed AGN-feedback scenario as the origin of galaxy downsizing phenomena, where galaxies with currently larger stellar masses previously had higher AGN energetic contributions and star formation originating infrared luminosities, and have finished their major star formation more quickly, due to stronger AGN feedback.

Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Gerke, S., E-mail: sebastian.gerke@uni-konstanz.de [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Becker, H.-W.; Rogalla, D. [RUBION — Central Unit for Ion Beams and Radioisotopes, University of Bochum, Bochum, 44780 (Germany); Singer, F.; Brinkmann, N.; Fritz, S.; Hammud, A.; Keller, P.; Skorka, D.; Sommer, D. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Weiß, C. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Flege, S. [Department of Materials Science, TU Darmstadt, Darmstadt 64287 (Germany); Hahn, G. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Job, R. [Department of Electrical Engineering and Computer Science, Münster University of Applied Sciences, Steinfurt 48565 (Germany); Terheiden, B. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany)

2016-01-01

Amorphous silicon (a-Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen-less amorphous silicon films are RF magnetron sputter deposited and post-hydrogenated in a remote hydrogen plasma reactor at a temperature of 370 °C. Secondary ion mass spectrometry of a boron doped (p) a-Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter-target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c-Si can be achieved by post-hydrogenation yielding a minority carrier lifetime of ~ 360 μs finding an optimum for ~ 40 nm thin films, deposited at 325 °C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen-less sputter deposited amorphous network. Post-hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E{sub 04}) can be determined to ~ 1.88 eV after post-hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post-hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a-Si forms a rough surface compared to CVD a-Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post-hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post-hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post-hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post-hydrogenated a-Si layers. The results of this study open the way for

Control of wettability of hydrogenated amorphous carbon thin films by laser-assisted micro- and nanostructuring

International Nuclear Information System (INIS)

Pfleging, Wilhelm; Kohler, Robert; Torge, Maika; Trouillet, Vanessa; Danneil, Friederike; Stueber, Michael

2011-01-01

A flexible and rapid surface functionalization of amorphous carbon films shows a great potential for various application fields such as biological surfaces and tribological systems. For this purpose, the combination of thin film deposition and subsequent laser material processing was investigated. Amorphous carbon layers doped with hydrogen were deposited on silicon wafers by reactive direct-current magnetron sputtering. Films with three different hydrogen contents were synthesized. Subsequent to the thin film deposition process, UV laser material processing at wavelengths of 193 nm or 248 nm was performed with respect to chemical surface modification and surface structuring on micro- and nanometer scale. Depending on structure size and laser-induced chemical surface modification the adjustment of the surface energy and wetting behaviour in a broad range from hydrophobic to hydrophilic was possible. The chemical modification and the ablation mechanisms near the ablation threshold were strongly influenced by the hydrogen content in amorphous carbon thin films. Structural and chemical information of the as-deposited and modified films was obtained by Raman spectroscopy, X-ray photoelectron spectroscopy and contact angle measurements.

Phase transformations in sputter-deposited W-doped TiO2 films during annealing in air

International Nuclear Information System (INIS)

Saladukhin, I. A.; Abadias, G.

2013-01-01

Pure and tungsten-doped TiO 2 films are characterized as amorphous in the as-deposited state by XRD. A crystallization of titanium dioxide occurs during their annealing in air. Depending on the tungsten and nitrogen doping level, anatase or rutile phase formation is observed. Both of these phases are thermally stable in all interval of the temperatures used during annealing. Phase composition and lattice parameter analysis indicates on the formation of substitutional Ti 1 -xW x O 2 films. N-doped Ti 0 .75W 0 .25O 2 film is more resistant against high-temperature oxidation as compared to Ti 0 .74W 0 .26O 2 film and, especially, as compared to Ti 0 .60W 0 .40O 2 film. (authors)

Hydrogen diffusion and microstructure in undoped and boron-dope hydrogenated amorphous silicon: An IR and SIMS study

International Nuclear Information System (INIS)

Mitra, S.

1991-01-01

Hydrogenated amorphous silicon (a-Si:H) prepared by rf sputtering of a polycrystalline Si target at various rf powers 50 ≤ P ≤ 550 W (0.27--2.97 W/cm 2 ), target to substrate distance 1 ≤ d ≤ 2 double-prime, and varying hydrogen partial pressures. Doping was accomplished by introducing diborane (B 2 H 6 ) in the plasma. Hydrogen diffusion was studied from the depth profiles obtained from the SIMS on multilayered a-Si:H/a-Si:(H,D)/a-Si:H samples. The properties of the samples were characterized by IR absorption, optical gap measurements and ESR. IR yielded quantitative and qualitative information total hydrogen content and the nature of the hydrogen bonding, respectively. Hence the hydrogen microstructure of the samples could be varied in a systematic manner and monitored from the hydrogen vibrational modes. The ESR gave information on the number of paramagnetic defects per unit volume in the samples. The IR absorption of both as-deposited and annealed samples were closely monitored and the results clearly demonstrate a strong correlation between hydrogen diffusion and its microstructure. It is shown that microvoids in a-Si:H play a critical role in the process of diffusion by inducing deep hydrogen trapping sites that render them immobile. Consequently, as the microvoid density increases beyond a critical density hydrogen diffusion is totally quenched. The diffusion results are discussed both in the context of multiple trapping transport of hydrogen in an exponential distribution of trapping sites and the floating bond model

Temperature and ion-mass dependence of amorphization dose for ion beam irradiated zircon (ZrSiO4)

International Nuclear Information System (INIS)

Wang, L.M.; Ewing, R.C.; Eby, R.K.

1992-12-01

The temperature dependence of amorphization dose for zircon under 1.5 MeV Kr ion irradiation has been investigated using the ANL HVEM-Tandem Facility. Three regimes were observed in the amorphization dose-temperature curve. In the first regime (15 to 300 K), the critical amorphization dose increased from 3.06 to 4.5 ions/nm 2 . In the second regime (300 to 473 K), there is little change in the amorphizationdose. In the third regime (> 473 K), the amorphization dose increased exponentially to 8.3 ions/nm 2 at 913 K. This temperature dependence of amorphization dose can be described by two processes with different activation energies (0.018 and 0.31 eV respectively) which are attributed to close pair recombination in the cascades at low temperatures and radiation-enhanced epitaxial recrystallization at higher temperatures. The upper temperature limit for amorphization of zircon is estimated to be 1100 K. The ion-mass dependence of the amorphization dose (in dpa) has also been discussed in terms of the energy to recoils based on data obtained from He, Ne, Ar, Kr, Xe irradiations and a 238 Pu-doped sample

Indium doped zinc oxide thin films obtained by electrodeposition

International Nuclear Information System (INIS)

Machado, G.; Guerra, D.N.; Leinen, D.; Ramos-Barrado, J.R.; Marotti, R.E.; Dalchiele, E.A.

2005-01-01

Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In 2 O 3 or In(OH) 3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In 2 O 3 at the grain boundaries

TNX Burying Ground: Environmental information document

International Nuclear Information System (INIS)

Dunaway, J.K.W.; Johnson, W.F.; Kingley, L.E.; Simmons, R.V.; Bledsoe, H.W.

1987-03-01

The TNX Burying Ground, located within the TNX Area of the Savannah River Plant (SRP), was originally built to dispose of debris from an experimental evaporator explosion at TNX in 1953. This evaporator contained approximately 590 kg of uranyl nitrate. From 1980 to 1984, much of the waste material buried at TNX was excavated and sent to the SRP Radioactive Waste Burial Grounds for reburial. An estimated 27 kg of uranyl nitrate remains buried at TNX. The TNX Burying Ground consists of three sites known to contain waste and one site suspected of containing waste material. All four sites are located within the TNX security fenceline. Groundwater at the TNX Burying Ground was not evaluated because there are no groundwater monitoring wells installed in the immediate vicinity of this waste site. The closure options considered for the TNX Burying Ground are waste removal and closure, no waste removal and closure, and no action. The predominant pathways for human exposure to chemical and/or radioactive constituents are through surface, subsurface, and atmospheric transport. Modeling calculations were made to determine the risks to human population via these general pathways for the three postulated closure options. An ecological assessment was conducted to predict the environmental impacts on aquatic and terrestrial biota. The relative costs for each of the closure options were estimated

Facile synthesis of luminescent and amorphous La2O3-ZrO2:Eu3+ nanofibrous membranes with robust softness

Science.gov (United States)

Han, Weidong; Ding, Bin; Park, Mira; Cui, Fuhai; Ghouri, Zafar Khan; Saud, Prem Singh; Kim, Hak-Yong

2015-08-01

Novel luminescent and amorphous La2O3-ZrO2:Eu3+ (LZE) nanofibrous membranes with robust softness are fabricated for the first time via a facile electrospinning technique. By incorporating zirconium oxide, the as-prepared lanthanum oxide nanofibrous membranes can be dramatically changed from extreme fragility to robust softness. Meanwhile, the softness and luminescent performance of LZE nanofibrous membranes can be finely controlled by regulating the doping concentration of zirconium oxide and europium in lanthanum oxide nanofibers. Additionally, the crystal structure analysis using X-ray diffractometer and high resolution transmission electron microscopy measurements have confirmed the correlation between the amorphous structure and softness. Furthermore, LZE membranes show the characteristic emission of Eu3+ corresponding to 5D0, 1, 2-7F0, 1, 2, 3, 4 transitions due to an efficient energy transfer from O2- to Eu3+. The LZE nanofibrous membranes with the optimum doping Eu3+ concentration of 3 mol% exhibit excellent softness and luminescent properties, which make the materials to have potential applications in fluorescent lamps and field emission displays.Novel luminescent and amorphous La2O3-ZrO2:Eu3+ (LZE) nanofibrous membranes with robust softness are fabricated for the first time via a facile electrospinning technique. By incorporating zirconium oxide, the as-prepared lanthanum oxide nanofibrous membranes can be dramatically changed from extreme fragility to robust softness. Meanwhile, the softness and luminescent performance of LZE nanofibrous membranes can be finely controlled by regulating the doping concentration of zirconium oxide and europium in lanthanum oxide nanofibers. Additionally, the crystal structure analysis using X-ray diffractometer and high resolution transmission electron microscopy measurements have confirmed the correlation between the amorphous structure and softness. Furthermore, LZE membranes show the characteristic emission of Eu3

Crystallization induced of amorphous silicon by nickel

International Nuclear Information System (INIS)

Schmidt, J.A; Rinaldi, P; Budini, N; Arce, R; Buitrago, R.H

2008-01-01

Polycrystalline silicon (pc-Si) deposited on glass substrates is a very promising material for the production of different electronic devices, like thin film transistors, active matrices or solar cells. The crystallization of the amorphous silicon to obtain pc-Si can be achieved with different processes, among which nickel-induced crystallization is because it requires low concentrations of the metal and low annealing temperatures. Nucleation and growth of crystalline silicon are measured by the formation of silicide NiSi 2 , which has a lattice constant very similar to that of Si, and acts as a seed upon which crystalline grains can develop. The size of the pc-Si final grain depends on many factors, such as the initial concentration of Ni, the annealing time and temperature, and the presence of other atoms in the Si structure. This work presents a study on the influence of these parameters on the silicon crystallization process induced by Ni. We deposited a series of hydrogenated amorphous silicon samples (a-Si:H) on glass substrates, using the plasma-enhanced chemical vapor deposition method (PE-CVD) with silane gas (SiH 4 ). The deposition temperature was 200 o C, and we prepared intrinsic samples (i), lightly doped with boron (p), heavily doped with boron (p + ) and heavily doped with phosphorous (n + ). Each sample was divided into eight portions, depositing different concentrations of Ni into each one using the cathodic sputtering method. The concentration of Ni was determined by atomic adsorption spectroscopy, and included from 1.5 1 0 15 to 1.5 1 0 16 at/cm 2 . Later the samples were submitted to different thermal treatments in a circulating nitrogen atmosphere. In order to avoid violent dehydrogenation of the a-Si:H that damages the samples, the annealing was carried out gradually. In a first stage the samples were heated at a velocity of 0.5 o C /min up to 400 o C, holding them for 24 hrs at this temperature in order to reach hydrogen effusion. Heating

Study of amorphous phases in the ash of power plant (Zemianske Kostolany site); Studium amorfnych faz v elektrarenskych popoloch (lokalita Zemianske Kostolany)

Energy Technology Data Exchange (ETDEWEB)

Petkova, K [Univerzita Komenskeho v Bratislave, Prirodovedecka fakulta, Katedra geocheomie, 84215 Bratislava (Slovakia); Lalinska-Volekova, B [Univerzita Komenskeho v Bratislave, Prirodovedecka fakulta, Katedra mineralogie a petrologie, 84215 Bratislava (Slovakia)

2012-04-25

Using mineralogical methods (SEM, BSE, WDS, TEM, XRD) a chemical and mineral composition of selected samples of fresh power plant ash and of soils containing buried ash sediments in the area Zemianske Kostolany was studied. Chemically, the ash samples mainly comprised of Si, Fe, Al and Ca, followed by Mg, K, Na, Ti and S. From potentially toxic elements in the ash significantly increased arsenic content (358 - 1859 mg/kg), which is present mainly in the finest fraction of the studied samples. The dominant component of the investigated samples (average 74%) is created by amorphous aluminosilicate glass. These amorphous components have variable representation of Si, Al, Ca, Fe and were identified as a major phase bearing arsenic (by 2.28 wt. %). Arsenic binds to aggregates of nanoparticles, which consist of Al, Si, Ca, Fe, less to the phases of Fe and Ca. In addition to amorphous glass, arsenic binds also to unburned coal residues (up to 0.5 wt.%). From crystalline phases were identified quartz, calcite, mullite, feldspars, hematite, magnetite, cristobalite, rutile, mica light, pyrotite, pyrite, montmorillonite and perovskite. (authors)

Local Backbone Flexibility as a Determinant of the Apparent pKa Values of Buried Ionizable Groups in Proteins.

Science.gov (United States)

Peck, Meredith T; Ortega, Gabriel; De Luca-Johnson, Javier N; Schlessman, Jamie L; Robinson, Aaron C; García-Moreno E, Bertrand

2017-10-10

Ionizable groups buried in the hydrophobic interior of proteins are essential for energy transduction. These groups can have highly anomalous pK a values that reflect the incompatibility between charges and dehydrated environments. A systematic study of pK a values of buried ionizable groups in staphylococcal nuclease (SNase) suggests that these pK a values are determined in part by conformational reorganization of the protein. Lys-66 is one of the most deeply buried residues in SNase. We show that its apparent pK a of 5.7 reflects the average of the pK a values of Lys-66 in different conformational states of the protein. In the fully folded state, Lys-66 is deeply buried in the hydrophobic core of SNase and must titrate with a pK a of ≪5.7. In other states, the side chain of Lys-66 is fully solvent-exposed and has a normal pK a of ≈10.4. We show that the pK a of Lys-66 can be shifted from 5.7 toward a more normal value of 7.1 via the insertion of flanking Gly residues at positions 64 and 67 to promote an "open" conformation of SNase. Crystal structures and nuclear magnetic resonance spectroscopy show that in these Gly-containing variants Lys-66 can access bulk water as a consequence of overwinding of the C-terminal end of helix 1. These data illustrate that the apparent pK a values of buried groups in proteins are governed in part by the difference in free energy between different conformational states of the protein and by differences in the pK a values of the buried groups in the different conformations.

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

International Nuclear Information System (INIS)

Barchuk, I.P.; Kilchitskaya, V.I.; Lysenko, V.S.

1997-01-01

In this work SOI structures with buried SiO 2 -Si 3 N 4 -SiO 2 layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO 2 layers produced by either the ZMR or the SIMOX technique

Response of steel buried pipeline to the three dimensional fault movement

International Nuclear Information System (INIS)

Zia Tohidi, R.; Shakib, H.

2003-01-01

Fault movement during an earthquake may have severe effect on buried pipelines as a lifeline element. A few studies are carried out on the behaviour of buried pipelines to this kind of damage and disruption. In most of these studies, the fault movements are modeled as two-dimensional. In this study, by modeling the pipe as a beam and the surrounding soil as nonlinear springs, the effect of three dimensional movement of fault on buried pipelines is investigated. Some important parameters such as; fault movement, depth of buried, geometrical characteristics of the pipe, angle of pipe- soil friction, angle of pipe- fault crossing, and the fault slip are considered in this study

Controlled fluoridation of amorphous carbon films deposited at reactive plasma conditions

Directory of Open Access Journals (Sweden)

Yoffe Alexander

2015-09-01

Full Text Available A study of the correlations between plasma parameters, gas ratios, and deposited amorphous carbon film properties is presented. The injection of a C4F8/Ar/N2 mixture of gases was successfully used in an inductively coupled plasma system for the preparation of amorphous carbon films with different fluoride doping at room-temperature, using silicon as a substrate. This coating was formed at low-pressure and low-energy using an inductively coupled plasma process. A strong dependence between the ratios of gases during deposition and the composition of the substrate compounds was shown. The values of ratios between Ar (or Ar+N2 and C4F8 - 1:1 and between N2 and Ar - 1:2 in the N2/Ar/C4F8 mixture were found as the best for low fluoridated coatings. In addition, an example of improving the etch-passivation in the Bosch procedure was described. Scanning electron microscopy with energy dispersive spectroscopy options, X-ray diffraction, and X-ray reflectivity were used for quantitative analysis of the deposited films.

Pure and Nb2O5-doped TiO2 amorphous thin films grown by dc magnetron sputtering at room temperature: Surface and photo-induced hydrophilic conversion studies

International Nuclear Information System (INIS)

Suchea, M.; Christoulakis, S.; Tudose, I.V.; Vernardou, D.; Lygeraki, M.I.; Anastasiadis, S.H.; Kitsopoulos, T.; Kiriakidis, G.

2007-01-01

Photo-induced hydrophilicity of titanium dioxide makes this material one of the most suitable for various coating applications in antifogging mirrors and self-cleaning glasses. The field of functional titanium dioxide coatings is expanding rapidly not only in applications for glass but also in applications for polymer, metal and ceramic materials. The high hydrophilic surface of TiO 2 is interesting for understanding also the basic photon-related surface science of titanium dioxide. In doing so, it is inevitably necessary to understand the relationship between the photoreaction and the surface properties. In this work, photo-induced hydrophilic conversion was evaluated on amorphous pure and niobium oxide-doped titanium dioxide thin films on Corning 1737F glass grown by dc magnetron sputtering technique at room temperature. This study is focused on the influence of the Ar:O ratio during sputtering plasma deposition on thin film surface morphology and subsequent photo-induced hydrophilic conversion results. Structural characterization carried out by X-ray diffraction and atomic force microscopy (AFM) has shown that our films are amorphous and extremely smooth with a surface roughness bellow 1 nm. Contact angle measurements were performed on as-deposited and during/after 10 min UV exposure. We present evidence that the photo-induced hydrophilic conversion of film surface is directly correlated with surface morphology and can be controlled by growth conditions

Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering

International Nuclear Information System (INIS)

Kang, Y.M.; Kwon, S.H.; Choi, J.H.; Cho, Y.J.; Song, P.K.

2010-01-01

Ce-doped indium tin oxide (ITO:Ce) films were deposited on flexible polyimide substrates by DC magnetron sputtering using ITO targets containing various CeO 2 contents (CeO 2 : 0, 0.5, 3.0, 4.0, 6.0 wt.%) at room temperature and post-annealed at 200 o C. The crystallinity of the ITO films decreased with increasing Ce content, and it led to a decrease in surface roughness. In addition, a relatively small change in resistance in dynamic stress mode was obtained for ITO:Ce films even after the annealing at high temperature (200 o C). The minimum resistivity of the amorphous ITO:Ce films was 3.96 x 10 -4 Ωcm, which was deposited using a 3.0 wt.% CeO 2 doped ITO target. The amorphous ITO:Ce films not only have comparable electrical properties to the polycrystalline films but also have a crystallization temperature > 200 o C. In addition, the amorphous ITO:Ce film showed stable mechanical properties in the bended state.

Semiconducting Properties of Nanostructured Amorphous Carbon Thin Films Incorporated with Iodine by Thermal Chemical Vapor Deposition

Science.gov (United States)

Kamaruzaman, Dayana; Ahmad, Nurfadzilah; Annuar, Ishak; Rusop, Mohamad

2013-11-01

Nanostructured iodine-post doped amorphous carbon (a-C:I) thin films were prepared from camphor oil using a thermal chemical vapor deposition (TCVD) technique at different doping temperatures. The structural properties of the films were studied by field-emission scanning electron microscopy (FESEM), energy-dispersive spectroscopy (EDS), Raman, and Fourier transform infrared (FTIR) studies. FESEM and EDS studies showed successful iodine doping. FTIR and Raman studies showed that the a-C:I thin films consisted of a mixture of sp2- and sp3-bonded carbon atoms. The optical and electrical properties of a-C:I thin films were determined by UV-vis-NIR spectroscopy and current-voltage (I-V) measurement respectively. The optical band gap of a-C thin films decreased upon iodine doping. The highest electrical conductivity was found at 400 °C doping. Heterojunctions are confirmed by rectifying the I-V characteristics of an a-C:I/n-Si junction.

Electrical and optical properties of amorphous indium zinc oxide films

International Nuclear Information System (INIS)

Ito, N.; Sato, Y.; Song, P.K.; Kaijio, A.; Inoue, K.; Shigesato, Y.

2006-01-01

Valence electron control and electron transport mechanisms on the amorphous indium zinc oxide (IZO) films were investigated. The amorphous IZO films were deposited by dc magnetron sputtering using an oxide ceramic IZO target (89.3 wt.% In 2 O 3 and 10.7 wt.% ZnO). N-type impurity dopings, such as Sn, Al or F, could not lead to the increase in carrier density in the IZO. Whereas, H 2 introduction into the IZO deposition process was confirmed to be effective to increase carrier density. By 30% H 2 introduction into the deposition process, carrier density increased from 3.08 x 10 2 to 7.65 x 10 2 cm -3 , which must be originated in generations of oxygen vacancies or interstitial Zn 2+ ions. Decrease in the transmittance in the near infrared region and increase in the optical band gap were observed with the H 2 introduction, which corresponded to the increase in carrier density. The lowest resistivity of 3.39 x 10 -4 Ω cm was obtained by 10% H 2 introduction without substrate heating during the deposition

Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

Science.gov (United States)

Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

Electromagnetic scattering from buried objects

International Nuclear Information System (INIS)

Brock, B.C.; Sorensen, K.W.

1994-10-01

Radar imaging and detection of objects buried in soil has potentially important applications in the areas of nonproliferation of weapons, environmental monitoring, hazardous-waste site location and assessment, and even archeology. In order to understand and exploit this potential, it is first necessary to understand how the soil responds to an electromagnetic wave, and how targets buried within the soil scatter the electromagnetic wave. We examine the response of the soil to a short pulse, and illustrate the roll of the complex dielectric permittivity of the soil in determining radar range resolution. This leads to a concept of an optimum frequency and bandwidth for imaging in a particular soil. We then propose a new definition for radar cross section which is consistent with the modified radar equation for use with buried targets. This radar cross section plays the same roll in the modified radar equation as the traditional radar cross section does in the free-space radar equation, and is directly comparable to it. The radar cross section of several canonical objects in lossy media is derived, and examples are given for several object/soil combinations

Implementation of the buried waste integrated demonstration

International Nuclear Information System (INIS)

Kostelnik, K.M.; Merrill, S.K.

1992-01-01

The Department of Energy (DOE), Office of Technology Development (OTD) has initiated the Buried Waste Integrated Demonstration (BWID) to resolve technological deficiencies associated with the remediation of radioactive and hazardous buried waste. The BWID mission is to identify, demonstrate, and transfer innovative technologies for the remediation of DOE buried waste. To accomplish the mission, BWID is using a systems approach which supports the development of a suite of advanced and innovative technologies for the effective and efficient remediation of buried waste. This systems approach includes technologies for theentire remediation cycle. Specifically, BWID sponsors technology development in the following technology categories: site and waste characterization, retrieval, preprocessing, ex situ treatment, packaging, transportation, storage, disposal, and post-disposal monitoring

Phase composition of yttrium-doped zirconia ceramics

Energy Technology Data Exchange (ETDEWEB)

Hennig, Christoph; Scheinost, Andreas C. [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Molecular Structures; Weiss, Stephan [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Surface Processes; Ikeda-Ohno, Atsushi [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Chemistry of the F-Elements; Gumeniuk, R. [Technische Univ. Bergakademie Freiberg (Germany). Inst. fuer Experimentelle Physik

2017-06-01

Ceramic material might be an alternative to borosilicate glass for the immobilization of nuclear waste. The crystallinity of ceramic material increases the corrosion resistance over several magnitudes in relation to amorphous glasses. The stability of such ceramics depend on several parameters, among them the crystal phase composition. A reliable quantitative phase analysis is necessary to correlate the macroscopic material properties with structure parameters. We performed a feasibility study based on yttrium-doped zirconia ceramics as analogue for trivalent actinides to ascertain that the nanosized crystal phases in zirconia ceramics can be reliably determined.

Numerical Modeling of Mechanical Behavior for Buried Steel Pipelines Crossing Subsidence Strata.

Directory of Open Access Journals (Sweden)

J Zhang

Full Text Available This paper addresses the mechanical behavior of buried steel pipeline crossing subsidence strata. The investigation is based on numerical simulation of the nonlinear response of the pipeline-soil system through finite element method, considering large strain and displacement, inelastic material behavior of buried pipeline and the surrounding soil, as well as contact and friction on the pipeline-soil interface. Effects of key parameters on the mechanical behavior of buried pipeline were investigated, such as strata subsidence, diameter-thickness ratio, buried depth, internal pressure, friction coefficient and soil properties. The results show that the maximum strain appears on the outer transition subsidence section of the pipeline, and its cross section is concave shaped. With the increasing of strata subsidence and diameter-thickness ratio, the out of roundness, longitudinal strain and equivalent plastic strain increase gradually. With the buried depth increasing, the deflection, out of roundness and strain of the pipeline decrease. Internal pressure and friction coefficient have little effect on the deflection of buried pipeline. Out of roundness is reduced and the strain is increased gradually with the increasing of internal pressure. The physical properties of soil have a great influence on the mechanical properties of buried pipeline. The results from the present study can be used for the development of optimization design and preventive maintenance for buried steel pipelines.

Formation and crystallization kinetics of Nd-Fe-B-based bulk amorphous alloy

Energy Technology Data Exchange (ETDEWEB)

Wu, Qiong; Ge, Hongliang; Zhang, Pengyue; Li, Dongyun; Wang, Zisheng [China Jiliang University, Magnetism Key Laboratory of Zhejiang Province, Hangzhou (China)

2014-06-15

In order to improve the glass-forming ability (GFA) of Nd-Fe-B ternary alloys to obtain fully amorphous bulk Nd-Fe-B-based alloy, the effects of Mo and Y doping on GFA of the alloys were investigated. It was found that the substitution of Mo for Fe and Y for Nd enhanced the GFA of the Nd-Y-Fe-Mo-B alloys. It was also revealed that the GFA of the samples was optimized by 4 at.% Mo doping and increased with theYcontent. The fully amorphous structures were all formed in the Nd{sub 6-x}Y{sub x}Fe{sub 68}Mo{sub 4}B{sub 22} (x =1-5) alloy rods with 1.5 mm-diameter. After subsequent crystallization, the devitrified Nd{sub 3}Y{sub 3}Fe{sub 68}Mo{sub 4}B{sub 22} alloy rod exhibited a uniform distribution of grains with a coercivity of 364.1 kA/m. The crystallization behavior of Nd{sub 3}Y{sub 3}Fe{sub 68}Mo{sub 4}B{sub 22} BMG was investigated in isothermal situation. The Avrami exponent n determined by JAM plot is lower than 2.5, implying that the crystallization is mainly governed by a growth of particles with decreasing nucleation rate. (orig.)

Linear variable differential transformer sensor using glass-covered amorphous wires as active core

International Nuclear Information System (INIS)

Chiriac, H.; Hristoforou, E.; Neagu, Maria; Pieptanariu, M.

2000-01-01

Results concerning linear variable differential transformer (LVDT) displacement sensor using as movable core glass-covered amorphous wires are presented. The LVDT response is linear for a displacement of the movable core up to about 14 mm, with an accuracy of 1 μm. LVDT using glass-covered amorphous wire as an active core presents a high sensitivity and good mechanical and corrosion resistance

Optical and electrochromic properties of sol-gel deposited Ti- doped vanadium oxide films

International Nuclear Information System (INIS)

Oezer, N.; Sabuncu, S.

1997-01-01

Because of the yellowish color, vanadium oxide films in the as deposited state is not as favorable as transparent coatings for most elector chromic devices. an interesting possibility to alter the yellowish colours is the doping with other non-absorbing metal oxides. Ti doped vanadium oxide films with various amounts of titanium were synthesized and investigated as transparent counter electrodes for electrochromic transmissive device application. Electrochromic titanium doped vanadium pentoxide (V sub 2 O 5) coatings were prepared by the sol-gel dip coating technique. The coating solutions were synthesized from vanadium tri(isopropoxide) precursors. X-ray diffraction (XRD) studies showed that the sol-gel deposited doped films heat treated at temperatures below 350 degree centigrade, were amorphous, whereas hose heat treated at higher temperatures were slight y crystalline. The optical and electrochemical properties of the Ti doped vanadium oxide films has been investigated in 0.1 m LiClO sub 4 propylene carbonate solution color changes by dropping were noted for all investigated films exhibits good electrochemical cycling (CV) measurements also showed that Ti doped V sub 2 O sub 5 films exhibits good electrochemical cycling reversibility, 'in situ' optical measurement revealed that those films exhibits good electrochemical cycling the spectra range 300 < lambda < 800 nm and change color between yellow and light green. The change in visible transmittance was 25 % for 5% Ti doped film. (author)

In situ vitrification: Application to buried waste

International Nuclear Information System (INIS)

Callow, R.A.; Thompson, L.E.

1991-01-01

Two in situ vitrification field tests were conducted in June and July 1990 at Idaho National Engineering Laboratory. In situ vitrification is a technology for in-place conversion of contaminated soils into a durable glass and crystalline waste form and is being investigated as a potential remediation technology for buried waste. The overall objective of the two tests was to assess the general suitability of the process to remediate buried waste structures found at Idaho National Engineering Laboratory. In particular, these tests were designed as part of a treatability study to provide essential information on field performance of the process under conditions of significant combustible and metal wastes, and to test a newly developed electrode feed technology. The tests were successfully completed, and the electrode feed technology provided valuable operational control for successfully processing the high metal content waste. The results indicate that in situ vitrification is a feasible technology for application to buried waste. 2 refs., 5 figs., 2 tabs

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

Science.gov (United States)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

In situ vitrification of buried waste sites

International Nuclear Information System (INIS)

Shade, J.W.; Thompson, L.E.; Kindle, C.H.

1991-04-01

In situ vitrification (ISV) is a remedial technology initially developed to treat soils contaminated with a variety of organics, heavy metals, and/or radioactive materials. Recent tests have indicated the feasibility of applying the process to buried wastes including containers, combustibles, and buried metals. In addition, ISV is being considered for application to the emplacement of barriers and to the vitrification of underground tanks. This report provides a review of some of the recent experiences of applying ISV in engineering-scale and pilot-scale tests to wastes containing organics, the Environmental Protection Agency (EPA) Toxic metals buried in sealed containers, and buried ferrous metals, with emphasis on the characteristics of the vitrified product and adjacent soil. 9 refs., 2 figs., 3 tabs

Research and development of photovoltaic power system. Interface studies of amorphous silicon; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kaimen no kenkyu

Energy Technology Data Exchange (ETDEWEB)

Konagai, M [Tokyo Institute of Technology, Tokyo (Japan). Faculty of Engineering

1994-12-01

This paper reports the result obtained during fiscal 1994 on research on interface of amorphous silicon for solar cells. In research on amorphous solar cells using ZnO for transparent electrically conductive films, considerations were given on a growth mechanism of a ZnO film using the MOCVD process. It was made clear that the ZnO film grows with Zn(OH)2 working as a film forming species. It was also shown that the larger the ZnO particle size is, the more the solar cell efficiency is improved. Furthermore, theoretical elucidation was made on effects of rear face of an interface on cell characteristics, and experimental discussions were given subsequently. In research on solar cells using hydrogen diluted `i` layers, delta-doped solar cells were fabricated based on basic data obtained in the previous fiscal year, and the hydrogen dilution effect was evaluated from the cell characteristics. When the hydrogen dilution ratio is increased from zero to one, the conversion efficiency has improved from 12.2% to 12.6%. In addition, experiments and discussions were given on solar cells fabricated by using SiH2Cl2. 9 figs.

Encapsulated Vanadium-Based Hybrids in Amorphous N-Doped Carbon Matrix as Anode Materials for Lithium-Ion Batteries.

Science.gov (United States)

Long, Bei; Balogun, Muhammad-Sadeeq; Luo, Lei; Luo, Yang; Qiu, Weitao; Song, Shuqin; Zhang, Lei; Tong, Yexiang

2017-11-01

Recently, researchers have made significant advancement in employing transition metal compound hybrids as anode material for lithium-ion batteries and developing simple preparation of these hybrids. To this end, this study reports a facile and scalable method for fabricating a vanadium oxide-nitride composite encapsulated in amorphous carbon matrix by simply mixing ammonium metavanadate and melamine as anode materials for lithium-ion batteries. By tuning the annealing temperature of the mixture, different hybrids of vanadium oxide-nitride compounds are synthesized. The electrode material prepared at 700 °C, i.e., VM-700, exhibits excellent cyclic stability retaining 92% of its reversible capacity after 200 cycles at a current density of 0.5 A g -1 and attractive rate performance (220 mAh g -1 ) under the current density of up to 2 A g -1 . The outstanding electrochemical properties can be attributed to the synergistic effect from heterojunction form by the vanadium compound hybrids, the improved ability of the excellent conductive carbon for electron transfer, and restraining the expansion and aggregation of vanadium oxide-nitride in cycling. These interesting findings will provide a reference for the preparation of transition metal oxide and nitride composites as well. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Energy Technology Data Exchange (ETDEWEB)

Tsai, Meng-Chen [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Min-Hung [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Kuo, Chin-Lung; Lin, Hsin-Chih [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2016-11-30

Highlights: • The structural and electrical characteristics of the ZrO{sub 2} high-K dielectrics, treated with the in situ atomic layer doping of nitrogen into the top and down regions (top and down nitridation, TN and DN, respectively), were investigated. • The amorphous DN sample has a lower leakage current density (J{sub g}) than the amorphous TN sample, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). • The crystalline TN sample exhibited a lower CET and a similar J{sub g} as compared with the crystalline DN sample, which can be ascribed to the suppression of IL regrowth. • The crystalline ZrO{sub 2} with in situ atomic layer doping of nitrogen into the top region exhibited superior scaling limit, electrical characteristics, and reliability. - Abstract: Amorphous and crystalline ZrO{sub 2} gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J{sub g}) of ∼7 × 10{sup −4} A/cm{sup 2} with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO{sub 2} from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J{sub g} of ∼1.4 × 10{sup −5} A/cm{sup 2} as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO{sub 2} gate dielectrics, and the nitrogen incorporation at the top of crystalline

The influence of carrier density and doping type on lithium insertion and extraction processes at silicon surfaces

International Nuclear Information System (INIS)

McSweeney, W.; Lotty, O.; Glynn, C.; Geaney, H.; Holmes, J.D.; O’Dwyer, C.

2014-01-01

The Li + insertion and extraction characteristics at n-type and p-type Si(100) electrodes with different carrier density and doping type are investigated by cyclic voltammetry and constant current measurements. The insertion and extraction potentials are demonstrated to vary with cycling and the occurrence of an activation effect is shown in n-type electrodes where the charge capacity and voltammetric currents are found to be much higher than p-type electrodes. A rate-dependent redox process influenced by the surface region electronic density, which influences the magnitude of cyclic voltammetry current is found at Si(100) surface regions during Li insertion and extraction. At p-type Si(100) surface regions, a thin, uniform film forms at lower currents, while also showing a consistently high (>70%) Coulombic efficiency for Li extraction. The p-type Si(100) surface region does not undergo crack formation after deintercalation and the amorphization was demonstrated using transmission electron microscopy (TEM). X-ray photoelectron spectroscopy (XPS) and Raman scattering demonstrate that highly doped n-type Si(100) retains Li as a silicide and converts to an amorphous phase as a two-step phase conversion process. The findings show the succinct dependence of Li insertion and extraction processes for uniformly doped Si(100) single crystals and how the doping type and its effect on the semiconductor-solution interface dominate Li insertion and extraction, composition, crystallinity changes and charge capacity

Electron spin resonance characterization of trapping centers in Unibond reg-sign buried oxides

International Nuclear Information System (INIS)

Conley, J.F. Jr.; Lenahan, P.M.; Wallace, B.D.

1996-01-01

Electron spin resonance and capacitance vs. voltage measurements are used to evaluate the radiation response of Unibond buried oxides. When damaged by hole injection, it is found that Unibond reg-sign buried oxides exhibit a rough correspondence between E' centers and positive charge as well as generation of P b centers at the Unibond buried oxide/Si interface. In these respects, Unibond buried oxides qualitatively resemble thermal SiO 2 . However, a hydrogen complexed E' center known as the 74 G doublet is also detected in the Unibond buried oxides. This defect is not detectable in thermal SiO 2 under similar circumstances. Since the presence of 74 G doublet center is generally indicative of very high hydrogen content and since hydrogen is clearly a significant participant in radiation damage, this result suggests a qualitative difference between the radiation response of Unibond and thermal SiO 2 . Unibond results are also compared and contrasted with similar investigations on separation-by-implanted-oxygen (SIMOX) buried oxides. Although the charge trapping response of Unibond buried oxides may be inferior to that of radiation hardened thermal SiO 2 , it appears to be more simple and superior to that of SIMOX buried oxides

Integrated test schedule for buried waste integrated demonstration

International Nuclear Information System (INIS)

Brown, J.T.; McDonald, J.K.

1992-05-01

The Integrated Test Schedule incorporates the various schedules the Buried Waste Integrated Demonstration (BWID) supports into one document. This document contains the Federal Facilities Agreement and Consent Order schedules for the Idaho National Engineering Laboratory, Hanford Reservation, Oak Ridge Reservation, and Fernald Environmental Materials Center. Included in the Integrated Test Schedule is the Buried Waste Integrated Demonstration ''windows of opportunity'' schedule. The ''windows of opportunity'' schedule shows periods of time in which Buried Waste Integrated Demonstration Program-sponsored technology demonstrations could support key decisions in the Federal Facilities Agreement and Consent Order. Schedules for the Buried Waste Integrated Demonstration-sponsored technology task plans are categorized by technology area and divided by current fiscal year and out-year. Total estimated costs for Buried Waste Integrated Demonstration-sponsored Technology Task Plans for FY-92 through FY-97 are $74.756M

Total dose hardening of buried insulator in implanted silicon-on-insulator structures

International Nuclear Information System (INIS)

Mao, B.Y.; Chen, C.E.; Pollack, G.; Hughes, H.L.; Davis, G.E.

1987-01-01

Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants

Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

International Nuclear Information System (INIS)

Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

2009-01-01

The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10 18 cm -3 . Beyond this defect level, a sublinear relation is found i.e., not

Nickel-induced crystallization of amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Schmidt, J A; Arce, R D; Buitrago, R H [INTEC (CONICET-UNL), Gueemes 3450, S3000GLN Santa Fe (Argentina); Budini, N; Rinaldi, P, E-mail: jschmidt@intec.unl.edu.a [FIQ - UNL, Santiago del Estero 2829, S3000AOM Santa Fe (Argentina)

2009-05-01

The nickel-induced crystallization of hydrogenated amorphous silicon (a-Si:H) is used to obtain large grained polycrystalline silicon thin films on glass substrates. a-Si:H is deposited by plasma enhanced chemical vapour deposition at 200 deg. C, preparing intrinsic and slightly p-doped samples. Each sample was divided in several pieces, over which increasing Ni concentrations were sputtered. Two crystallization methods are compared, conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The crystallization was followed by optical microscopy and scanning electron microscopy observations, X-ray diffraction, and reflectance measurements in the UV region. The large grain sizes obtained - larger than 100{mu}m for the samples crystallized by CFA - are very encouraging for the preparation of low-cost thin film polycrystalline silicon solar cells.

Melter development needs assessment for RWMC buried wastes

International Nuclear Information System (INIS)

Donaldson, A.D.; Carpenedo, R.J.; Anderson, G.L.

1992-02-01

This report presents a survey and initial assessment of the existing state-of-the-art melter technology necessary to thermally treat (stabilize) buried TRU waste, by producing a highly leach resistant glass/ceramic waste form suitable for final disposal. Buried mixed transuranic (TRU) waste at the Idaho National Engineering Laboratory (INEL) represents an environmental hazard requiring remediation. The Environmental Protection Agency (EPA) placed the INEL on the National Priorities List in 1989. Remediation of the buried TRU-contaminated waste via the CERCLA decision process is required to remove INEL from the National Priorities List. A Waste Technology Development (WTD) Preliminary Systems Design and Thermal Technologies Screening Study identified joule-heated and plasma-heated melters as the most probable thermal systems technologies capable of melting the INEL soil and waste to produce the desired final waste form [Iron-Enriched Basalt (IEB) glass/ceramic]. The work reported herein then surveys the state of existing melter technology and assesses it within the context of processing INEL buried TRU wastes and contaminated soils. Necessary technology development work is recommended

High-performance all-printed amorphous oxide FETs and logics with electronically compatible electrode/ channel interface.

Science.gov (United States)

Sharma, Bhupendra Kumar; Stoesser, Anna; Mondal, Sandeep Kumar; Garlapati, Suresh K; Fawey, Mohammed H; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

2018-06-12

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially, when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/ printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/ channel interface based on the judicious material selection. Exploiting this newly developed fabrication schemes, we are now able to demonstrate high-performance all-printed FETs and logic circuits using amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor, indium tin oxide (ITO) as electrodes and composite solid polymer electrolyte as the gate insulator. Interestingly, all-printed FETs demonstrate an optimal electrical performance in terms of threshold voltages and device mobility and may very well be compared with devices fabricated using sputtered ITO electrodes. This observation originates from the selection of electrode/ channel materials from the same transparent semiconductor oxide family, resulting in the formation of In-Sn-Zn-O (ITZO) based diffused a-IGZO/ ITO interface that controls doping density while ensuring high electrical performance. Compressive spectroscopic studies reveal that Sn doping mediated excellent band alignment of IGZO with ITO electrodes is responsible for the excellent device performance observed. All-printed n-MOS based logic circuits have also been demonstrated towards new-generation portable electronics.

Swift heavy ion irradiation induced phase transformation in undoped and niobium doped titanium dioxide composite thin films

Energy Technology Data Exchange (ETDEWEB)

Gautam, Subodh K., E-mail: subodhkgtm@gmail.com [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Chettah, Abdelhak [LGMM Laboratory, Université 20 Août 1955-Skikda, BP 26, 21000 Skikda (Algeria); Singh, R.G. [Department of Physics, Bhagini Nivedita College, Delhi University, Delhi 110043 (India); Ojha, Sunil; Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

2016-07-15

Study reports the effect of swift heavy ion (SHI) irradiation induced phase transformation in undoped and Niobium doped anatase TiO{sub 2} composite thin films. Investigations were carried out at different densities of electronic excitations (EEs) using 120 MeV Ag and 130 MeV Ni ions irradiations. Films were initially annealed at 900 °C and results revealed that undoped films were highly stable in anatase phase, while the Nb doped films showed the composite nature with the weak presence of Niobium penta-oxide (Nb{sub 2}O{sub 5}) phase. The effect at low density of EEs in undoped film show partial anatase to rutile phase transformation; however doped film shows only further growth of Nb{sub 2}O{sub 5} phase beside the anatase to rutile phase transformation. At higher density of EEs induced by Ag ions, registered continuous ion track of ∼3 nm in lattice which leads to nano-crystallization followed by decomposition/amorphization of rutile TiO{sub 2} and Nb{sub 2}O{sub 5} phases in undoped and doped films, respectively. However, Ni ions are only induced discontinuous sequence of ion tracks with creation of damage and disorder and do not show amorphization in the lattice. The in-elastic thermal spike calculations were carried out for anatase TiO{sub 2} phase to understand the effect of EEs on anatase to rutile phase transformation followed by amorphization in NTO films in terms of continuous and discontinuous track formation by SHI irradiation.

Spectrally selective molecular doped solids: spectroscopy, photophysics and their application to ultrafast optical pulse processing

International Nuclear Information System (INIS)

Galaup, Jean-Pierre

2005-01-01

The persistent spectral hole-burning (PSHB) phenomenon observed in molecular doped polymers cooled down to liquid helium temperatures allows the engraving of spectral structures in the inhomogeneous absorption profile of the material. This phenomenon known since 1974 has became a fruitful field for the study of the intimacy of complex molecular systems in the solid state, revealing high-resolution spectroscopy, photophysics, photochemistry and dynamics of molecular doped amorphous media, organic as well as inorganic. A PSHB molecular doped solid can be programmed in spectral domain and therefore, it can be converted in an optical processor capable to achieve user-defined optical functions. Some aspects of this field are illustrated in the present paper. An application is presented where a naphthalocyanine doped polymer film is used in a demonstrative experiment to prove that temporal aberration free re-compression of ultra-short light pulses is feasible. Perspectives for the coherent control of light fields or photochemical processes are also evoked

Reversible devitrification in amorphous As₂ Se₃ under pressure

DEFF Research Database (Denmark)

Ahmad, Azkar Saeed; Lou, Hong Bo; Lin, Chuan Long

2016-01-01

as compared to the virgin amorphous phase and that the structural recovery to the virgin amorphous phase is a consequence of an enhancement in covalent bonding character over interlayer forces upon complete decompression. Furthermore, we observed a two-dimensional to three-dimensional network transition under...

Imaging and thickness measurement of amorphous intergranular films using TEM

International Nuclear Information System (INIS)

MacLaren, I.

2004-01-01

Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

Effect of oxygen to argon flow ratio on the properties of Al-doped ZnO films for amorphous silicon thin film solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Lin, Yang-Shih [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Lien, Shui-Yang, E-mail: syl@mdu.edu.tw [Department of Materials Science and Engineering, MingDao University, ChangHua 52345, Taiwan, ROC (China); Huang, Yung-Chuan [Department of Materials Science and Engineering, MingDao University, ChangHua 52345, Taiwan, ROC (China); Wang, Chao-Chun [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Liu, Chueh-Yang [Department of Materials Science and Engineering, MingDao University, ChangHua 52345, Taiwan, ROC (China); Nautiyal, Asheesh [Department of Mechanical Engineering, Yuan Ze University, 135 Yuan-Tung Road, Chungli, 320 Taoyuan, Taiwan, ROC (China); Wuu, Dong-Sing [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Lee, Shuo-Jun [Department of Mechanical Engineering, Yuan Ze University, 135 Yuan-Tung Road, Chungli, 320 Taoyuan, Taiwan, ROC (China)

2013-02-01

Transparent conductive oxide thin films in solar cell fabrication have attracted much attention due to their high conductivity and transmittance. In this paper, we have investigated the aluminum-doped zinc oxide (AZO) thin films prepared by radiofrequency magnetron sputtering on Asahi U-type SnO{sub 2} glass with different O{sub 2}/Ar flow ratios in vacuum chamber. Furthermore, the micro-structural, electrical, and optical properties of AZO/SnO{sub 2} films were studied. The change in O{sub 2}/Ar flow ratios is found to significantly affect the haze value, and slightly affect electrical resistivity and transmittance of the films. Afterward, the fabricated AZO thin films with different O{sub 2}/Ar flow ratios were used for building the solar cell devices. The current–voltage and external quantum efficiency characteristics were investigated for the solar cell devices. The optimized O{sub 2}/Ar flow ratio of 3 for solar device shows the best efficiency of 10.41%, and a 20% increase in short-circuit current density compared to typical Asahi solar cells. - Highlights: ► A thin Al-doped zinc oxide (AZO) film has been deposited on SnO{sub 2} substrates. ► The AZO film deposited at an O{sub 2}/Ar ratio of 3 shows low resistivity and high haze. ► The AZO film contains tiny grains that enhance light scattering. ► The amorphous silicon solar cell with the AZO layer shows a 20% increase in Jsc.

Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

Science.gov (United States)

Wienkes, Lee Raymond

Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

The possibility of using dc conductivity for investigating phase transition in amorphous semiconductors

International Nuclear Information System (INIS)

El-Mously, M.K.; Mina, N.K.

1985-07-01

Different formulas have been applied to deduce the effective or the generalized electrical conductivity of double phase systems. These formulas have been revised and fitted to the experimental data of the binary systems amorphous-crystal (a-c) and liquid-crystal (l-c) for pure elementary selenium and selenium doped by different other elements. Both connected medium and statistical mixture theories can be applied depending on the nature of the system under investigation. (author)

Phase, current, absorbance, and photoluminescence of double and triple metal ion-doped synthetic and salmon DNA thin films

Science.gov (United States)

Chopade, Prathamesh; Reddy Dugasani, Sreekantha; Reddy Kesama, Mallikarjuna; Yoo, Sanghyun; Gnapareddy, Bramaramba; Lee, Yun Woo; Jeon, Sohee; Jeong, Jun-Ho; Park, Sung Ha

2017-10-01

We fabricated synthetic double-crossover (DX) DNA lattices and natural salmon DNA (SDNA) thin films, doped with 3 combinations of double divalent metal ions (M2+)-doped groups (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and single combination of a triple M2+-doped group (Cu2+-Ni2+-Co2+) at various concentrations of M2+ ([M2+]). We evaluated the optimum concentration of M2+ ([M2+]O) (the phase of M2+-doped DX DNA lattices changed from crystalline (up to ([M2+]O) to amorphous (above [M2+]O)) and measured the current, absorbance, and photoluminescent characteristics of multiple M2+-doped SDNA thin films. Phase transitions (visualized in phase diagrams theoretically as well as experimentally) from crystalline to amorphous for double (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and triple (Cu2+-Ni2+-Co2+) dopings occurred between 0.8 mM and 1.0 mM of Ni2+ at a fixed 0.5 mM of Co2+, between 0.6 mM and 0.8 mM of Co2+ at a fixed 3.0 mM of Cu2+, between 0.6 mM and 0.8 mM of Ni2+ at a fixed 3.0 mM of Cu2+, and between 0.6 mM and 0.8 mM of Co2+ at fixed 2.0 mM of Cu2+ and 0.8 mM of Ni2+, respectively. The overall behavior of the current and photoluminescence showed increments as increasing [M2+] up to [M2+]O, then decrements with further increasing [M2+]. On the other hand, absorbance at 260 nm showed the opposite behavior. Multiple M2+-doped DNA thin films can be used in specific devices and sensors with enhanced optoelectric characteristics and tunable multi-functionalities.

Experimental investigation of buried tritium in plant and animal tissues

International Nuclear Information System (INIS)

Kim, S. B.; Workman, W. J. G.; Davis, P. A.

2008-01-01

Buried exchangeable tritium appears as part of organically bound tritium (OBT) in the traditional experimental determination of OBT. Since buried tritium quickly exchanges with hydrogen atoms in the body following ingestion, assuming that it is part of OBT rather than part of tritiated water (HTO) could result in a significant overestimate of the ingestion dose. This paper documents an experimental investigation into the existence, amount and significance of buried tritium in plant and fish samples. OBT concentrations in the samples were determined in the traditional way and also following denaturing with five chemical solutions that break down large molecules and expose buried tritium to exchange with free hydrogen atoms. A comparison of the OBT concentrations before and after denaturing, together with the concentration of HTO in the supernatant obtained after denaturing, suggests that buried OBT may exist but makes up less than 5% of the OBT concentration in plants and at most 20% of the OBT concentration in fish. The effects of rinse time and rinse water volumes were investigated to optimize the removal of exchangeable OBT from the samples. (authors)

Color tunability of Sm{sup 3+} doped antimony–phosphate glass phosphors showing broadband fluorescence

Energy Technology Data Exchange (ETDEWEB)

Xiao, P. [School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034 (China); Zhang, J.J., E-mail: zhangjj@dlpu.edu.cn [School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034 (China); Shen, L.F. [Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Wang, Z.Q. [School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034 (China); Pun, E.Y.B. [Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Lin, H., E-mail: lhai8686@yahoo.com [School of Textile and Material Engineering, Dalian Polytechnic University, Dalian 116034 (China); Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

2016-10-15

Sm{sup 3+} doped multicomponent antimony phosphate (MSP) luminescent glasses were prepared and tunable white fluorescence has been investigated. Broad visible emission depending on excitation wavelength is validated to be dominated by discrepant Sb{sup 3+} emitting centers. Group of narrow emissions from Sm{sup 3+} is beneficial to adding yellow and red components in Sm{sup 3+} doped MSP glasses, which is strengthened by effective energy transfer from Sb{sup 3+} to Sm{sup 3+}. Excitation wavelength selection and Sm{sup 3+} concentration adjustment are two feasible routes to optimize luminescence color in Sm{sup 3+} doped MSP glasses and the color tunability of fluorescence indicates that amorphous Sm{sup 3+} doped MSP glass phosphors possess potential for ideal white light devices.

Amorphous metal composites

International Nuclear Information System (INIS)

Byrne, M.A.; Lupinski, J.H.

1984-01-01

This patent discloses an improved amorphous metal composite and process of making the composite. The amorphous metal composite comprises amorphous metal (e.g. iron) and a low molecular weight thermosetting polymer binder. The process comprises placing an amorphous metal in particulate form and a thermosetting polymer binder powder into a container, mixing these materials, and applying heat and pressure to convert the mixture into an amorphous metal composite

Dopant activation in Sn-doped Ga{sub 2}O{sub 3} investigated by X-ray absorption spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Siah, S. C., E-mail: sincheng@alum.mit.edu; Brandt, R. E.; Jaramillo, R.; Buonassisi, T., E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Lim, K. [SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Schelhas, L. T.; Toney, M. F. [SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States); Heinemann, M. D. [PVcomB, Helmholtz-Zentrum Berlin, 12489 Berlin (Germany); Chua, D.; Gordon, R. G. [Department of Chemistry Materials Science and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States); Wright, J.; Segre, C. U. [Physics Department and CSRRI, Illinois Institute of Technology, Chicago, Illinois 60616 (United States); Perkins, J. D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2015-12-21

Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga{sub 2}O{sub 3}:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of β-Ga{sub 2}O{sub 3}:Sn grown using edge-defined film-fed growth at 1725 °C is compared with amorphous Ga{sub 2}O{sub 3}:Sn films deposited at low temperature (<300 °C). Our XAS analyses indicate that activated Sn dopant atoms in conductive single crystal β-Ga{sub 2}O{sub 3}:Sn are present as Sn{sup 4+}, preferentially substituting for Ga at the octahedral site, as predicted by theoretical calculations. In contrast, inactive Sn atoms in resistive a-Ga{sub 2}O{sub 3}:Sn are present in either +2 or +4 charge states depending on growth conditions. These observations suggest the importance of growing Ga{sub 2}O{sub 3}:Sn at high temperature to obtain a crystalline phase and controlling the oxidation state of Sn during growth to achieve dopant activation.

Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

Science.gov (United States)

Zhang, Jiahua; Chen, Da; Huang, Shihua

2017-12-01

The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p+-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I-V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p+-c-Si device. Finally, the device resistive-switching mechanism was analyzed. Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

Cryofracture as a tool for preprocessing retrieved buried and stored transuranic waste

International Nuclear Information System (INIS)

Loomis, G.G.; Winberg, M.R.; Ancho, M.L.; Osborne, D.

1992-01-01

This paper summarizes important features of an experimental demonstration of applying the Cryofracture process to size-reduce retrieved buried and stored transuranic-contaminated wastes. By size reducing retrieved buried and stored waste, treatment technologies such as thermal treatment can be expedited. Additionally, size reduction of the waste can decrease the amount of storage space required by reducing the volume requirements of storage containers. A demonstration program was performed at the Cryofracture facility by Nuclear Remedial Technologies for the Idaho National Engineering Laboratory. Cryofracture is a size-reducing process whereby objects are frozen to liquid nitrogen temperatures and crushed in a large hydraulic press. Material s at cryogenic temperatures have low ductility and are easily size-reduced by fracturing. Six 55-gallon drums and six 2 x 2 x 8 ft boxes containing simulated waste with tracers were subjected to the Cryofracture process. Data was obtained on (a) cool-down time, (b) yield strength of the containers, (c) size distribution of the waste before and after the Cryofracture process, (d) volume reduction of the waste, and (e) sampling of air and surface dusts for spread of tracers to evaluate potential contamination spread. The Cryofracture process was compared to conventional shredders and detailed cost estimates were established for construction of a Cryofracture facility at the Idaho National Engineering Laboratory

Concealed epispadias associated with a buried penis.

Science.gov (United States)

Sol Melgar, Ricardo; Gorduza, Daniela; Demède, Delphine; Mouriquand, Pierre

2016-12-01

The aim was to describe the clinical presentation and the surgical management of penile epispadias associated with a buried penis in five children. This is a 5-year retrospective review of patients presenting with a buried penis, a congenital defect of the penile skin shaft associated with an unretractable foreskin for whom a penile epispadias was found at the time of surgery. All had undergone surgery combining a Cantwell-Ransley procedure and refashioning of the penile skin following the authors' technique. Three children had a glanular epispadias and two had a midshaft epispadias. Four had a satisfactory outcome, and one required a complementary urethroplasty for glanular dehiscence. Buried penis and epispadias are usually isolated congenital anomalies, although they can be associated. It is therefore recommended to warn parents about the possibility of underlying penile anomaly in children with buried penises and unretractable foreskin. Careful palpation of the dorsum of the glans through the foreskin looking for a dorsal cleft could indicate an associated epispadiac urethra. Surgical correction of both anomalies can be done at the same time. Parents of boys with buried penises should be warned that underlying penile anomaly may exist. Copyright © 2016 Journal of Pediatric Urology Company. Published by Elsevier Ltd. All rights reserved.

Detection and mapping of buried waste

International Nuclear Information System (INIS)

Stahl, G.; Odenweller, J.; Huff, D.

1996-01-01

A major environmental concern today is the characterization, remediation, and monitoring of Federal waste sites, such as those operated by the Department of Energy (DOE). A significant amount of hazardous waste is buried at known sites on DOE reservations. Determining the exact location of buried waste trenches is an important step in the characterization and remediation of these sites. Remotely sensed imagery offers a rich source of information for accomplishing this task. This paper presents a case study conducted at Solid Waste Storage Area 4 (SWSA 4) at Oak Ridge National Laboratory. Historical aerial photography and recently collected multispectral imagery were analyzed to determine the precise locations of the buried trenches. A comparison of the results to recent ground measurements indicates the strengths and weaknesses of the remote sensing approach. Further analysis of these ground data also provides an understanding of the phenomenology that gives rise to the imagery signatures associated with the trenches. Application of these techniques can significantly reduce the costs of site remediation. By knowing the trench locations precisely, rather than the general locations, remediation alternatives to contain and isolate the waste materials can be tailored appropriately

Structure and density for As23Se67Ge10 amorphous films

International Nuclear Information System (INIS)

Shchurova, T.N.; Savchenko, N.D.

1999-01-01

The effect of thermal annealing and argon laser irradiation on structure and volume for thin amorphous As 23 Se 67 Ge 10 films deposited by thermal evaporation has been investigated. The short-range structure for the annealed films has been found to be more ordered as compared to the irradiated films. The decrease in film volume under thermal annealing and its increase under laser irradiation have been shown. The changes in film volume have been discussed in the context of non-ergodic model for the amorphous state equilibrium taking into account forces acting from the substrate

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

International Nuclear Information System (INIS)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Manera, Maria Grazia; Rella, Roberto; Taurino, Antonietta

2011-01-01

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Science.gov (United States)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Grazia Manera, Maria; Rella, Roberto; Taurino, Antonietta

2011-09-01

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

Energy Technology Data Exchange (ETDEWEB)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe [Physics Department, University of Salento, Via Arnesano, 73100 Lecce (Italy); Catalano, Massimo; Manera, Maria Grazia; Rella, Roberto; Taurino, Antonietta, E-mail: antonietta.taurino@le.imm.cnr.it [Institute for Microelectronics and Microsystems, IMM-CNR, Via Monteroni, 73100 Lecce (Italy)

2011-09-14

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Dual-band infrared capabilities for imaging buried object sites

Energy Technology Data Exchange (ETDEWEB)

Del Grande, N.K.; Durbin, P.F.; Gorvad, M.R.; Perkins, D.E.; Clark, G.A.; Hernandez, J.E.; Sherwood, R.J.

1993-04-02

We discuss dual-band infrared (DBIR) capabilities for imaging buried object sizes. We identify physical features affecting thermal contrast needed to distinguish buried object sites from undisturbed sites or surface clutter. Apart from atmospheric transmission and system performance, these features include: object size, shape, and burial depth; ambient soil, disturbed soil and object site thermal diffusivity differences; surface temperature, emissivity, plant-cover, slope, albedo and roughness variations; weather conditions and measurement times. We use good instrumentation to measure the time-varying temperature differences between buried object sites and undisturbed soil sites. We compare near surface soil temperature differences with radiometric infrared (IR) surface temperature differences recorded at 4.7 {plus_minus} 0.4 {mu}m and at 10.6 {plus_minus} 1.0 {mu}m. By producing selective DBIR image ratio maps, we distinguish temperature-difference patterns from surface emissivity effects. We discuss temperature differences between buried object sites, filled hole site (without buried objects), cleared (undisturbed) soil sites, and grass-covered sites (with and without different types of surface clutter). We compare temperature, emissivity-ratio, visible and near-IR reflectance signatures of surface objects, leafy plants and sod. We discuss the physical aspects of environmental, surface and buried target features affecting interpretation of buried targets, surface objects and natural backgrounds.

Inhibition and quenching effect on positronium formation in metal salt doped polymer blend

Science.gov (United States)

Praveena, S. D.; Ravindrachary, V.; Ismayil, Bhajantri, R. F.; Harisha, A.; Guruswamy, B.; Hegde, Shreedatta; Sagar, Rohan N.

2018-04-01

Sodium Bromide (NaBr) doped PVA/PVP (50:50) polymer blend composites were prepared using solution casting technique. Pure PVA/PVP blend and PVA/PVP:NaBr composites were studied using XRD and Positron Annihilation Lifetime Spectroscopy (PALS). XRD study shows increase in amorphous nature of the blend due to the NaBr dopant and PALS studies reveal that the o-Ps lifetime (τ3) and intensity (I3) decreases with increase in NaBr doping level. This shows chemical quenching and inhibition process of positronium (Ps) formation in the composite. Here the electron acceptor (Br-) acts as a strong chemical quencher for positronium formation and same is understood based on the spur model.

X-ray characterization Si-doped InAs nanowires grown on GaAs

Energy Technology Data Exchange (ETDEWEB)

Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Grap, Thomas; Lepsa, Mihail [Forschungszentrum Juelich, Institut fuer Bio- und Nanosysteme (Germany)

2011-07-01

Semiconductor nanowires (NW) are of particular interest due to the ability to synthesize single-crystalline 1D epitaxial structures and heterostructures in the nanometer range. However, many details of the growth mechanism are not well understood. In particular, understanding and control of doping mechanisms during NW growth are important issues for technological applications. In this contribution we present a x-ray diffraction study of the influence of Si-doping in InAs NWs grown on GaAs(111) substrates using In-assisted MBE growth. With the help of coplanar and asymmetric x-ray diffraction, we monitor the evolution of the lattice constants and structure of the InAs NWs as function of doping concentration. We observe that increasing the nominal doping concentration leads to the appearance of additional diffraction maxima corresponding to material whose vertical lattice parameter is 1% smaller than that of the undoped nanowires. Those lattice parameters can be attributed with alloy formation in the form of island like crystallites.

Atomic scale characterization of ion-induced amorphization of GaAs and InAs using PAC spectroscopy

International Nuclear Information System (INIS)

Dogra, R.; Byrne, A.P.; Ridgway, M.C.

2005-01-01

Single crystals of GaAs (100) and InAs (100) were implanted with 1-7 MeV 74 Ge ions over a wide dose range at liquid nitrogen temperature. The implanted substrates were investigated with respect to the damage production by means of perturbed angular correlation spectroscopy based upon hyperfine interactions of nuclear electromagnetic moments of probe nuclei with extra-nuclear fields. The perturbed angular correlation measurements were performed at room temperature utilizing the 111 In/Cd radioisotope probe nuclei. The crystalline, disordered and amorphous probe environments were identified from the measurements. The defect production is described within the framework of different amorphization models. (author). 6 refs., 2 figs

Photocatalytic oxidation of acetaminophen using carbon self-doped titanium dioxide

Directory of Open Access Journals (Sweden)

Mark Daniel G. de Luna

2016-07-01

Full Text Available A new carbon self-doped (C-doped TiO2 photocatalyst was synthesized by sol–gel method, in which titanium butoxide was utilized because of its dual functions as a titanium precursor and a carbon source. The effects of calcination temperature from 200 to 600 °C on the photocatalytic activity towards acetaminophen (ACT, which was used as a model persistent organic pollutant under visible light were examined. The effects of temperature on the structure and physicochemical properties of the C-doped TiO2 were also investigated by X-ray diffraction, BET measurement, X-ray photoelectron spectroscopy, and scanning electron microscopy. The specific surface area of the as-doped TiO2 declined as the crystal size increased with increasing calcination temperature. Only amorphous TiO2 was present at 200 °C, while an anatase phase was observed between 300 and 500 °C. Both anatase and rutile phases were observed at 600 °C. Photocatalytic activity increased as the calcination temperature initially increased from 200 to 300 °C but it decreased as the calcination temperature further increased from 400 to 600 °C. The highest ACT removal of 94% with an apparent rate constant of 5.0 × 10−3 min−1 was achieved using the new doped TiO2 calcined at 300 °C, which had an atomic composition of 31.6% Ti2p3, 50.3% O1s and 18.2% C1s.

Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

Science.gov (United States)

Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S. K.

2014-06-01

We have carried out comprehensive computational and experimental study on the face-centered cubic Ge2Sb2Te5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In2Te3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation α hν = β (hν - E_{{g }} )2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.

Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

International Nuclear Information System (INIS)

Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S.K.

2014-01-01

We have carried out comprehensive computational and experimental study on the face-centered cubic Ge 2 Sb 2 Te 5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In 2 Te 3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation αhν = β(hν - E g ) 2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials. (orig.)

Study of amorphous semiconductors doped with rare earths (Gd and Er) and conducting polymers by EPR techniques and magnetic susceptibility; Estudo de semicondutores amorfos dopados com terras raras (Gd e Er) e de polimeros condutores atraves das tecnicas de RPE e susceptibilidade magnetica

Energy Technology Data Exchange (ETDEWEB)

Sercheli, Mauricio da Silva

1999-07-01

This thesis involves the study of amorphous semiconductors and conducting polymers, which have been characterized by EPR and magnetic susceptibility measurements, and to a lesser extent by Raman spectroscopy and RBS. The semiconductors were studied using thin films of silicon doped with rare earth metals, e.g. erbium and gadolinium, which had their magnetic properties studied. Using these studies we could determine the state of valence of the rare earths as well as their concentrations in the silicon matrix. According to our results, the valence of the rare earth metal ions is 3+, and we were able to conclude that 4f electronic shells could not be used for the calculation of the conducting band in this system. Furthermore, the analysis of the data on the magnetic susceptibility of the Er{sup 3+} ion with cubic crystalline acting field, gave us the opportunity to estimate the overall splitting of their electronic states for the first time. The conducting polymers were studied using samples of poly(3-methylthiophene) doped with ClO{sub 4}{sup -}, which show a phase transition in the range of 230 K to 130 K. The electron paramagnetic resonance also gives important information on the crystallization, doping level and the presence of polarons or bipolarons in conducting polymers. (author)

Structural simplicity as a restraint on the structure of amorphous silicon

Science.gov (United States)

Cliffe, Matthew J.; Bartók, Albert P.; Kerber, Rachel N.; Grey, Clare P.; Csányi, Gábor; Goodwin, Andrew L.

2017-06-01

Understanding the structural origins of the properties of amorphous materials remains one of the most important challenges in structural science. In this study, we demonstrate that local "structural simplicity", embodied by the degree to which atomic environments within a material are similar to each other, is a powerful concept for rationalizing the structure of amorphous silicon (a -Si) a canonical amorphous material. We show, by restraining a reverse Monte Carlo refinement against pair distribution function (PDF) data to be simpler, that the simplest model consistent with the PDF is a continuous random network (CRN). A further effect of producing a simple model of a -Si is the generation of a (pseudo)gap in the electronic density of states, suggesting that structural homogeneity drives electronic homogeneity. That this method produces models of a -Si that approach the state-of-the-art without the need for chemically specific restraints (beyond the assumption of homogeneity) suggests that simplicity-based refinement approaches may allow experiment-driven structural modeling techniques to be developed for the wide variety of amorphous semiconductors with strong local order.

Electrochemical treatment of domestic wastewater using boron-doped diamond and nanostructured amorphous carbon electrodes.

Science.gov (United States)

Daghrir, Rimeh; Drogui, Patrick; Tshibangu, Joel; Delegan, Nazar; El Khakani, My Ali

2014-05-01

The performance of the electrochemical oxidation process for efficient treatment of domestic wastewater loaded with organic matter was studied. The process was firstly evaluated in terms of its capability of producing an oxidant agent (H2O2) using amorphous carbon (or carbon felt) as cathode, whereas Ti/BDD electrode was used as anode. Relatively high concentrations of H2O2 (0.064 mM) was produced after 90 min of electrolysis time, at 4.0 A of current intensity and using amorphous carbon at the cathode. Factorial design and central composite design methodologies were successively used to define the optimal operating conditions to reach maximum removal of chemical oxygen demand (COD) and color. Current intensity and electrolysis time were found to influence the removal of COD and color. The contribution of current intensity on the removal of COD and color was around 59.1 and 58.8%, respectively, whereas the contribution of treatment time on the removal of COD and color was around 23.2 and 22.9%, respectively. The electrochemical treatment applied under 3.0 A of current intensity, during 120 min of electrolysis time and using Ti/BDD as anode, was found to be the optimal operating condition in terms of cost/effectiveness. Under these optimal conditions, the average removal rates of COD and color were 78.9 ± 2 and 85.5 ± 2 %, whereas 70% of total organic carbon removal was achieved.

Niobium-doped strontium titanates as SOFC anodes

DEFF Research Database (Denmark)

Blennow Tullmar, Peter; Kammer Hansen, Kent; Wallenberg, L. Reine

2008-01-01

been synthesized with a recently developed modified glycine-nitrate process. The synthesized powders have been calcined and sintered in air or in 9% H(2) / N(2) between 800 - 1400 degrees C. After calcination the samples were single phase Nb-doped strontium titanate with grain sizes of less than 100 nm...... in diameter on average. The phase purity, defect structure, and microstructure of the materials have been analyzed with SEM, XRD, and TGA. The electrical conductivity of the Nb-doped titanate decreased with increasing temperature and showed a phonon scattering conduction mechanism with sigma > 120 S...... ability of the Nb-doped titanates to be used as a part of a SOFC anode. However, the catalytic activity of the materials was not sufficient and it needs to be improved if titanate based materials are to be realized as constituents in SOFC anodes....

Aspects of hole-burning and spectro-temporal holography in molecular doped solids

International Nuclear Information System (INIS)

Galap, J.-P.

2006-01-01

The persistent spectral hole-burning (PSHB) phenomenon has been known since 1974. It is still an important research area for the study of the intimacy of complex molecular systems in the solid state, revealing high-resolution spectra, photophysics, photochemistry, and dynamics of molecular doped amorphous media, organic as well as inorganic. From another point of view, PSHB allows the engraving of any spectral structures in the inhomogeneous absorption band profile of molecular doped amorphous hosts or ion doped crystals cooled down to liquid helium temperatures. Therefore, a PSHB material is programmable in the spectral domain and consequently it can be transformed in an optical processor capable of achieving user-defined optical functions. Some aspects of both fields are illustrated in the present paper. Concerning the search for efficient PSHB materials, the hole-burning performances and the photophysics of polymer and xerogel based systems are compared. The problem of high-temperature persistent spectral hole-burning materials and the search for new frequency selective photosensitive systems for fast optical pulse processing at 800 nm are considered. Regarding the points treated, inorganic hosts based on silicate xerogels or porous glasses have shown the best results. Moreover, by combining inorganic and organic capabilities or by grafting organic species to the host, hybrid xerogels have not yet revealed all possibilities. Also, the interest of two-photon materials for engraving spectral features with near-infrared or infrared light is developed. As an introduction to possible applications of PSHB material, the basics of spectro-temporal holography are remembered and a demonstrative experiment using a naphthalocyanine-doped polymer film is described, proving that the temporal aberration free recompression of ultrashort light pulses is feasible, therefore opening a way for applications in ultrashort light pulse shaping. Aspects for a comparison between cw hole

Ultrasmooth metallic films with buried nanostructures for backside reflection-mode plasmonic biosensing

Energy Technology Data Exchange (ETDEWEB)

Lindquist, N.C.; Johnson, T.W.; Jose, J.; Otto, L.M. [Laboratory of Nanostructures and Biosensing, Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Oh, S.H. [Laboratory of Nanostructures and Biosensing, Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Department of Biophysics and Chemical Biology, Seoul National University, Seoul, 151-747 (Korea, Republic of)

2012-11-15

A new plasmonic device architecture based on ultrasmooth metallic surfaces with buried plasmonic nanostructures is presented. Using template-stripping techniques, ultrathin gold films with less than 5 Aa surface roughness are optically coupled to an arbitrary arrangement of buried metallic gratings, rings, and nanodots. As a prototypical example, linear plasmonic gratings buried under an ultrasmooth 20 nm thick gold surface for biosensing are presented. The optical illumination and collection are completely decoupled from the microfluidic delivery of liquid samples due to the backside, reflection-mode geometry. This allows for sensing with opaque or highly scattering liquids. With the buried nanostructure design, high sensitivity and decoupled backside (reflective) optical access are maintained, as with traditional prism-based surface plasmon resonance (SPR) sensors. In addition, the benefits offered by nanoplasmonic sensors such as spectral tunability and high-resolution, wide-field SPR imaging with normal-incidence epi-illumination that is simple to construct and align are gained as well. Beyond sensing, the buried plasmonic nanostructures with ultrasmooth metallic surfaces can benefit nanophotonic waveguides, surface-enhanced spectroscopy, nanolithography, and optical trapping. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Color and vanadium valency in V-doped ZrO2

International Nuclear Information System (INIS)

Ren, Feng; Ishida, Shingo; Takeuchi, Nobuyuki

1993-01-01

The distribution and chemical states of vanadium in V-doped ZrO 2 were studied to clarify the origin of the color of vanadium-zirconium yellow pigment in comparison with vanadium-tin yellow pigment. ESCA data and measurements of lattice constants of V-doped ZrO 2 revealed that vanadium was dissolved mainly as V 4+ substituting for Zr in ZrO 2 lattice, and its solubility limit was 0.5 wt% as V 2 O 5 . It was found that the yellow color of vanadium-zirconium yellow was produced predominantly by the dissolved vanadium and that the contribution of vanadium oxide on ZrO 2 grains to the yellow color was about 1.30 of that of the dissolved vanadium when compared on the basis of equimolar quantity of vanadium. Most of the undissolved vanadium oxide was in an amorphous or a poorly crystallized state

Biosynthesis of amorphous mesoporous aluminophosphates using yeast cells as templates

International Nuclear Information System (INIS)

Sifontes, Ángela B.; González, Gema; Tovar, Leidy M.; Méndez, Franklin J.; Gomes, Maria E.; Cañizales, Edgar; Niño-Vega, Gustavo; Villalobos, Hector; Brito, Joaquin L.

2013-01-01

Graphical abstract: Display Omitted Highlights: ► Amorphous aluminophosphates can take place using yeast as template. ► A mesoporous material was obtained. ► The specific surface area after calcinations ranged between 176 and 214 m 2 g −1 . -- Abstract: In this study aluminophosphates have been synthesized from aluminum isopropoxide and phosphoric acid solutions using yeast cells as template. The physicochemical characterization was carried out by thermogravimetric analysis; X-ray diffraction; Fourier transform infrared; N 2 adsorption–desorption isotherms; scanning electron microscopy; transmission electron microscopy and potentiometric titration with N-butylamine for determination of: thermal stability; crystalline structure; textural properties; morphology and surface acidity, respectively. The calcined powders consisted of an intimate mixture of amorphous and crystallized AlPO particles with sizes between 23 and 30 nm. The average pore size observed is 13–16 nm and the specific surface area after calcinations (at 650 °C) ranged between 176 and 214 m 2 g −1 .

Biosynthesis of amorphous mesoporous aluminophosphates using yeast cells as templates

Energy Technology Data Exchange (ETDEWEB)

Sifontes, Ángela B., E-mail: asifonte@ivic.gob.ve [Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado 20632, Caracas 1020-A (Venezuela, Bolivarian Republic of); González, Gema [Centro de Ingeniería de Materiales y Nanotecnología, Instituto Venezolano de Investigaciones Científicas, Apartado 20632, Caracas 1020-A (Venezuela, Bolivarian Republic of); Tovar, Leidy M.; Méndez, Franklin J. [Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado 20632, Caracas 1020-A (Venezuela, Bolivarian Republic of); Gomes, Maria E. [Centro de Ingeniería de Materiales y Nanotecnología, Instituto Venezolano de Investigaciones Científicas, Apartado 20632, Caracas 1020-A (Venezuela, Bolivarian Republic of); Cañizales, Edgar [Área de Análisis Químico Inorgánico, PDVSA, INTEVEP, Los Teques 1070-A (Venezuela, Bolivarian Republic of); Niño-Vega, Gustavo; Villalobos, Hector [Centro de Microbiología y Biología Celular, Instituto Venezolano de Investigaciones Científicas, Apartado 20632, Caracas 1020-A (Venezuela, Bolivarian Republic of); Brito, Joaquin L. [Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado 20632, Caracas 1020-A (Venezuela, Bolivarian Republic of)

2013-02-15

Graphical abstract: Display Omitted Highlights: ► Amorphous aluminophosphates can take place using yeast as template. ► A mesoporous material was obtained. ► The specific surface area after calcinations ranged between 176 and 214 m{sup 2} g{sup −1}. -- Abstract: In this study aluminophosphates have been synthesized from aluminum isopropoxide and phosphoric acid solutions using yeast cells as template. The physicochemical characterization was carried out by thermogravimetric analysis; X-ray diffraction; Fourier transform infrared; N{sub 2} adsorption–desorption isotherms; scanning electron microscopy; transmission electron microscopy and potentiometric titration with N-butylamine for determination of: thermal stability; crystalline structure; textural properties; morphology and surface acidity, respectively. The calcined powders consisted of an intimate mixture of amorphous and crystallized AlPO particles with sizes between 23 and 30 nm. The average pore size observed is 13–16 nm and the specific surface area after calcinations (at 650 °C) ranged between 176 and 214 m{sup 2} g{sup −1}.

Graphene as a transparent electrode for amorphous silicon-based solar cells

International Nuclear Information System (INIS)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-01-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles

Graphene as a transparent electrode for amorphous silicon-based solar cells

Science.gov (United States)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-06-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

Graphene as a transparent electrode for amorphous silicon-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Vaianella, F., E-mail: Fabio.Vaianella@umons.ac.be; Rosolen, G.; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, 20 place du Parc, B-7000 Mons (Belgium)

2015-06-28

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2013-11-01

Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

Analysis of buried pipelines at Kozloduy

International Nuclear Information System (INIS)

Asfura, A.

1999-01-01

This paper describes the analysis of the buried pipelines at Kozloduy NPP. It involves the description of the studied pipelines, their properties, a detailed description of the methodology applied, and the evaluation of the soil strain field as well as the graphical representation of the results obtained

Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis

Science.gov (United States)

Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro

2018-04-01

The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.

Synthesis and electrochemical properties of Ti-doped DLC films by a hybrid PVD/PECVD process

Science.gov (United States)

Jo, Yeong Ju; Zhang, Teng Fei; Son, Myoung Jun; Kim, Kwang Ho

2018-03-01

Low electrical conductivity and poor adhesion to metallic substrates are the main drawbacks of diamond-like carbon (DLC) films when used in electrode applications. In this study, Ti-doped DLC films with various Ti contents were synthesized on metal Ti substrates by a hybrid PVD/PECVD process, where PECVD was used for deposition of DLC films and PVD was used for Ti doping. The effects of the Ti doping ratio on the microstructure, adhesion strength, and electrical and electrochemical properties of the DLC films were systematically investigated. An increase in the Ti content led to increased surface roughness and a higher sp2/sp3 ratio of the Ti-DLC films. Ti atoms existed as amorphous-phase Ti carbide when the Ti doping ratio was less than 2.8 at.%, while the nanocrystalline TiC phase was formed in DLC films when the Ti doping ratio was exceeded 4.0 at.%. The adhesion strength, electrical resistivity, electrochemical activity and reversibility of the DLC films were greatly improved by Ti doping. The influence of Ti doping ratio on the electrical and electrochemical properties of the DLC films were also investigated and the best performance was obtained at a Ti content of 2.8 at.%.

Tabernaemontana divaricata leaves extract exacerbate burying behavior in mice

Directory of Open Access Journals (Sweden)

Raj Chanchal

2015-06-01

Full Text Available Objective: Tabernaemontana divaricata (TD from Apocynaceae family offers the traditional folklore medicinal benefits such as an anti-epileptic, anti-mania, brain tonic, and anti-oxidant. The aim of the present study was to evaluate the effect of ethanolic extract of TD leaves on burying behavior in mice. Materials and Methods:Mice were treated with oral administration (p.o. of ethanolic extract of TD (100, 200, and 300 mg/kg. Fluoxetine (FLX, a selective serotonin reuptake inhibitor was used as a reference drug. Obsessive-compulsive behavior was evaluated using marble-burying apparatus. Results:TD at doses of 100, 200, and 300 mg/kg dose-dependently inhibited the obsessive and compulsive behavior. The similar results were obtained from 5, 10, and 20 mg/kg of FLX. TD and FLX did not affect motor activity. Conclusion: The results indicated that TD and FLX produced similar inhibitory effects on marble-burying behavior.

Risk and cost tradeoffs for remote retrieval of buried waste

International Nuclear Information System (INIS)

Hyde, R.A.; Grienbenow, B.E.; Nickelson, D.F.

1994-01-01

The Buried Waste Integrated Demonstration is supporting the development, demonstration, testing, and evaluation of a suite of technologies that, when integrated with commercially available technologies, form a comprehensive system for the remediation of radioactive and hazardous buried waste. As a part of the program's technology development, remote retrieval equipment is being developed and tested for the remediation of buried waste. During remedial planning, several factors are considered when choosing remote versus manual retrieval systems. Time that workers are exposed to radioactivity, chemicals, air particulate, and industrial hazards is one consideration. The generation of secondary waste is also a consideration because it amounts to more waste to treat and some wastes may require special handling or treatment. Cost is also a big factor in determining whether remote or manual operations will be used. Other considerations include implementability, effectiveness, and the number of required personnel. This paper investigates each of these areas to show the risk and cost benefits and limitations for remote versus manual retrieval of buried waste

Affinity-based biosensors as promising tools for gene doping detection.

Science.gov (United States)

Minunni, Maria; Scarano, Simona; Mascini, Marco

2008-05-01

Innovative bioanalytical approaches can be foreseen as interesting means for solving relevant emerging problems in anti-doping control. Sport authorities fear that the newer form of doping, so-called gene doping, based on a misuse of gene therapy, will be undetectable and thus much less preventable. The World Anti-Doping Agency has already asked scientists to assist in finding ways to prevent and detect this newest kind of doping. In this Opinion article we discuss the main aspects of gene doping, from the putative target analytes to suitable sampling strategies. Moreover, we discuss the potential application of affinity sensing in this field, which so far has been successfully applied to a variety of analytical problems, from clinical diagnostics to food and environmental analysis.

Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of photovoltaic power system (Research and development of amorphous solar cells - Research on defect density in amorphous silicon); 1984 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (amorphous silicon no kekkan mitsudo no kenkyu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1985-03-01

For the development of high-efficiency, large-area, long-life, and low-cost solar cells, research is conducted on new methods of film formation and defect evaluation. Concerning the kinetics of Si thin film, a radical beam deposition method is proposed as a new low-temperature thin film growth method. Using the new method, a {mu}c-Si film is manufactured, through only a purely radical substrate surface reaction of chemically active, electrically neutral excited species. In research on the amorphous semiconductor superlattice, a new study is conducted on a multilayer, cyclic-structure superlattice consisting of thin films of a-Si:H and a-Si{sub 1-x}N{sub x}:H. In the research on an a-Si:H film formed by the direct photo-CVD (chemical vapor deposition) of disilane, the unit is improved and B and P are successfully doped by means of decompressed photo-CVD. In the evaluation of new materials for solar cells, research is conducted on the after-annealing characteristics of a-Si:H grown at a high speed, electrical characteristics of post-hydrogenated low boron-doped CVD a-Si, and microcrystalline SiGe alloys made by the spattering plasma CVD method. (NEDO)

On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Ke, Cangming; Sahraei, Nasim; Aberle, Armin G. [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Stangl, Rolf [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); Peters, Ian Marius

2015-06-28

A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t{sup +}-i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlO{sub x}) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlO{sub x} parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t{sup +}-i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm{sup 2}, according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed.

On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

International Nuclear Information System (INIS)

Ke, Cangming; Sahraei, Nasim; Aberle, Armin G.; Stangl, Rolf; Peters, Ian Marius

2015-01-01

A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t + -i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlO x ) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlO x parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t + -i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm 2 , according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed

Radiation amorphization of materials

International Nuclear Information System (INIS)

Neklyudov, I.M.; Chernyaeva, T.P.

1993-01-01

The results of experimental and theoretical research on radiation amorphization are presented in this analytical review. Mechanism and driving forces of radiation amorphization are described, kinetic and thermodynamic conditions of amorphization are formulated. Compositional criteria of radiation amorphization are presented, that allow to predict irradiation behaviour of materials, their tendency to radiation amorphization. Mechanism of transition from crystalline state to amorphous state are considered depending on dose, temperature, structure of primary radiation damage and flux level. (author). 134 refs., 4 tab., 25 fig

Thin films and buried interfaces characterization with X-ray standing waves

Energy Technology Data Exchange (ETDEWEB)

Lagomarsino, S [CNR, Rome (Italy). Istituto Elettronica Stato Solido

1996-09-01

The X-ray standing wave techniques is a powerful, non destructive method to study interfaces at the atomic level. Its basic features are described here together with the peculiarities of its applications to epitaxial films and buried interfaces. As examples of applications, experiments carried out on Si/silicide interfaces, on GaAs/InAs/GaAs buried interfaces and on Si/Ge superlattices are shown.

Methods of amorphization and investigation of the amorphous state

OpenAIRE

EINFALT, TOMAŽ; PLANINŠEK, ODON; HROVAT, KLEMEN

2013-01-01

The amorphous form of pharmaceutical materials represents the most energetic solid state of a material. It provides advantages in terms of dissolution rate and bioavailability. This review presents the methods of solid-state amorphization described in literature (supercooling of liquids, milling, lyophilization, spray drying, dehydration of crystalline hydrates), with the emphasis on milling. Furthermore, we describe how amorphous state of pharmaceuticals differ depending on method of prepara...

The Buried Town of Beaver.

Science.gov (United States)

Jostad, Karen

Local history as source material for environmental education is uniquely portrayed in this resource kit. Utilizing a Winona County Historical Society publication, "The Beaver Story" and accompanied by a teacher's guide, "The Buried Town of Beaver," and other teaching aids, a case study of the area can be developed. Based on the reminiscences of…

Development of a teleoperated backhoe for buried waste excavation

International Nuclear Information System (INIS)

Burks, B.L.; Killough, S.M.; Thompson, D.H.

1992-01-01

For nearly five decades the United States (US) Department of Energy (DOE) and its predecessor agencies have engaged in broad-based research and development activities as well as nuclear weapons component production. As a by-product of these activities, large quantities of waste materials have been granted. One of the most common approaches used for solid waste storage was to bury waste containers in pits and trenches. With the current emphasis on environmental restoration, DOE now plans to either retrieve much of the legacy of buried waste or stabilize the waste in place via in situ vitrification or other means. Because of the variety of materials that have been buried over the years, the hazards of retrieval are significant if performed using conventional manned operations. The potential hazards, in addition to radiation exposure, include pyrophorics, toxic chemicals, and explosives. Although manifests exist for much of the buried waste, these records are often incomplete compared to today's requirements. Because of the potential hazards and uncertainty about waste contents and container integrity, it is highly desirable to excavate these wastes using remotely operated equipment. In this paper the authors describe the development of a teleoperated military tractor called the Small Emplacement Excavator (SEE). Development of the SEE is being funded jointly by both DOE and the US Army. The DOE sponsor is the Office of Technology Development (OTD) Robotics Program. The US Army sponsor is the Program Manager for Ammunition Logistics, Picatinny Arsenal. The primary interest for DOE is in the application to remote excavation of buried waste, while the primary emphasis for the US Army is in the remote retrieval of unexploded ordnance. Technical requirements for these two tasks are very similar and, therefore, justify a joint development project. 1 ref

Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

OpenAIRE

Meddeb, H.; Bearda, Twan; Payo, M. Recaman; Abdelwahab, I.; Abdulraheem, Yaser; Ezzaouia, H.; Gordon, I.; Szlufcik, J.; POORTMANS, Jef

2015-01-01

The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yield...

Health Psychological Constructs as Predictors of Doping Susceptibility in Adolescent Athletes

Science.gov (United States)

Blank, Cornelia; Schobersberger, Wolfgang; Leichtfried, Veronika; Duschek, Stefan

2016-01-01

Background Doping is a highly relevant problem in sport, even in adolescent athletes. Knowledge of the psychological factors that influence doping susceptibility in young elite athletes remains sparse. Objectives This study investigated the predictive potential of different health-psychological constructs and well-being on doping susceptibility. The main hypotheses to be tested were positive associations of fear of failure, external locus of control, and ego-oriented goal orientation as well as negative associations of confidence of success, task orientation, internal locus of control, and performance motivation with doping susceptibility. Low levels of well-being are furthermore expected to be associated with doping susceptibility. Methods Within this cross-sectional study, 1,265 Austrian junior athletes aged between 14 and 19 years responded to a paper-pencil questionnaire. Results Performance motivation was a negative, while depressive mood, self-esteem, fear of failure and ego-oriented goal orientation were positive predictors of doping susceptibility. In addition, participants who were offered performance enhancing substances in the past were particularly susceptible to doping. Conclusions The study corroborates the predictive value of classical psychological constructs in doping research, initially analyzed in view of adult athletes, also for adolescents’ doping susceptibility. PMID:28144408

Health Psychological Constructs as Predictors of Doping Susceptibility in Adolescent Athletes.

Science.gov (United States)

Blank, Cornelia; Schobersberger, Wolfgang; Leichtfried, Veronika; Duschek, Stefan

2016-12-01

Doping is a highly relevant problem in sport, even in adolescent athletes. Knowledge of the psychological factors that influence doping susceptibility in young elite athletes remains sparse. This study investigated the predictive potential of different health-psychological constructs and well-being on doping susceptibility. The main hypotheses to be tested were positive associations of fear of failure, external locus of control, and ego-oriented goal orientation as well as negative associations of confidence of success, task orientation, internal locus of control, and performance motivation with doping susceptibility. Low levels of well-being are furthermore expected to be associated with doping susceptibility. Within this cross-sectional study, 1,265 Austrian junior athletes aged between 14 and 19 years responded to a paper-pencil questionnaire. Performance motivation was a negative, while depressive mood, self-esteem, fear of failure and ego-oriented goal orientation were positive predictors of doping susceptibility. In addition, participants who were offered performance enhancing substances in the past were particularly susceptible to doping. The study corroborates the predictive value of classical psychological constructs in doping research, initially analyzed in view of adult athletes, also for adolescents' doping susceptibility.

Buried nodules from the central Indian Ocean basin

Digital Repository Service at National Institute of Oceanography (India)

Pattan, J.N.; Parthiban, G.

. Of these, 13 buried nodules are from two sediment cores in siliceous ooze and seven from two sediment cores in a red clay area. The morphology, size, surface texture and chemical composition of buried nodules from two different sediment type have been...

Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

Science.gov (United States)

Alcinkaya, Burak; Sel, Kivanc

2018-01-01

The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

International Nuclear Information System (INIS)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

2014-01-01

SnO 2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO 2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO 2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO 2 , were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO 2 single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO 2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system

Superparamagnetic behavior of Fe-doped SnO2 nanoparticles

Science.gov (United States)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y.

2014-02-01

SnO2 is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO2 nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO2 nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO2, were investigated. The particle size (1.8-16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO2 single-phase structure for samples annealed at 1073-1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO2 is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

Thermal tests of a transport / Storage cask in buried conditions

International Nuclear Information System (INIS)

Yamakawa, H.; Gomi, Y.; Saegusa, T.; Ito, C.

1998-01-01

Thermal tests for a hypothetical accident which simulated accidents caused by building collapse in case of an earthquake were conducted using a full-scale dry type transport and storage cask (total heat load: 23 kW). The objectives of these tests were to clarify the heat transfer features of the buried cask under such accidents and the time limit for maintaining the thermal integrity of the cask. Moreover, thermal analyses of the test cask under the buried conditions were carried out on basis of experimental results to establish methodology for the thermal analysis. The characteristics of the test cask are described as well as the test method used. The heat transfer features of the buried cask under such accidents and a time for maintaining the thermal integrity of the cask have been obtained. (O.M.)

Doping dependence of magnetic and transport properties in single crystalline Co-doped BaFe2As2

International Nuclear Information System (INIS)

Nakajima, Yasuyuki; Taen, Toshihiro; Tamegai, Tsuyoshi

2010-01-01

We report the doping dependence of transport and magnetic properties in Co-doped BaFe 2 As 2 . With increasing Co concentration x, structural and magnetic transitions are suppressed and superconductivity emerges in the range of 0.3 c at low temperatures and low fields obtained from bulk magnetization is reasonably large and the doping dependence shows a maximum at x∼0.07 similar to T c . The values of J c at low temperatures reach about 1x10 6 A/cm 2 around the optimally doped region, which is potentially attractive for technological applications.

Surface and buried interfacial structures of epoxy resins used as underfills studied by sum frequency generation vibrational spectroscopy.

Science.gov (United States)

Vázquez, Anne V; Holden, Brad; Kristalyn, Cornelius; Fuller, Mike; Wilkerson, Brett; Chen, Zhan

2011-05-01

Flip chip technology has greatly improved the performance of semiconductor devices, but relies heavily on the performance of epoxy underfill adhesives. Because epoxy underfills are cured in situ in flip chip semiconductor devices, understanding their surface and interfacial structures is critical for understanding their adhesion to various substrates. Here, sum frequency generation (SFG) vibrational spectroscopy was used to study surface and buried interfacial structures of two model epoxy resins used as underfills in flip chip devices, bisphenol A digylcidyl ether (BADGE) and 1,4-butanediol diglycidyl ether (BDDGE). The surface structures of these epoxies were compared before and after cure, and the orientations of their surface functional groups were deduced to understand how surface structural changes during cure may affect adhesion properties. Further, the effect of moisture exposure, a known cause of adhesion failure, on surface structures was studied. It was found that the BADGE surface significantly restructured upon moisture exposure while the BDDGE surface did not, showing that BADGE adhesives may be more prone to moisture-induced delamination. Lastly, although surface structure can give some insight into adhesion, buried interfacial structures more directly correspond to adhesion properties of polymers. SFG was used to study buried interfaces between deuterated polystyrene (d-PS) and the epoxies before and after moisture exposure. It was shown that moisture exposure acted to disorder the buried interfaces, most likely due to swelling. These results correlated with lap shear adhesion testing showing a decrease in adhesion strength after moisture exposure. The presented work showed that surface and interfacial structures can be correlated to adhesive strength and may be helpful in understanding and designing optimized epoxy underfill adhesives.

Synthesis and characterization of resorcinol–formaldehyde resin chars doped by zinc oxide

International Nuclear Information System (INIS)

Gun’ko, Vladimir M.; Bogatyrov, Viktor M.; Oranska, Olena I.; Urubkov, Iliya V.; Leboda, Roman; Charmas, Barbara; Skubiszewska-Zięba, Jadwiga

2014-01-01

Polycondensation polymerization of resorcinol–formaldehyde (RF) mixtures in water with addition of different amounts of zinc acetate and then carbonization of dried gels are studied to prepare ZnO doped chars. Zinc acetate as a catalyst of resorcinol–formaldehyde polycondensation affects structural features of the RF resin (RFR) and, therefore, the texture of chars prepared from Zn-doped RFR. The ZnO doped chars are characterized using thermogravimetry, low temperature nitrogen adsorption/desorption, Raman spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and high resolution transmission electron microscopy (HRTEM). At a relatively high content of zinc acetate (1 mol per 10–40 mol of resorcinol) in the reaction mixture, the formation of crystallites of ZnO (zincite) occurs in a shape of straight nanorods of 20–130 nm in diameter and 1–3 μm in length. At a small content of zinc acetate (1 mol per 100–500 mol of resorcinol), ZnO in composites is XRD amorphous and does not form individual particles. The ZnO doped chars are pure nanoporous at a minimal ZnO content and nano-mesoporous or nano-meso-macroporous at a higher ZnO content.

Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

NARCIS (Netherlands)

Feinäugle, Matthias

2008-01-01

The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

Science.gov (United States)

Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

2018-06-01

Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

Enhancement of tributyltin degradation under natural light by N-doped TiO2 photocatalyst

International Nuclear Information System (INIS)

Bangkedphol, S.; Keenan, H.E.; Davidson, C.M.; Sakultantimetha, A.; Sirisaksoontorn, W.; Songsasen, A.

2010-01-01

Photo-degradation of tributyltin (TBT) has been enhanced by TiO 2 nanoparticles doped with nitrogen (N-doped TiO 2 ). The N-doped catalyst was prepared by a sol-gel reaction of titanium (IV) tetraisopropoxide with 25% ammonia solution and calcined at various temperatures from 300 to 600 deg. C. X-ray diffraction results showed that N-doped TiO 2 remained amorphous at 300 deg. C. At 400 deg. C the anatase phase occurred then transformed to the rutile phase at 600 deg. C. The crystallite size calculated from Scherrer's equation was in the range of 16-51 nm which depended on the calcination temperature. N-doped TiO 2 calcined at 400 deg. C which contained 0.054% nitrogen, demonstrated the highest photocatalytic degradation of TBT at 28% in 3 h under natural light when compared with undoped TiO 2 and commercial photocatalyst, P25-TiO 2 which gave 14.8 and 18% conversion, respectively.

Characterization of Amorphous and Co-Amorphous Simvastatin Formulations Prepared by Spray Drying

Directory of Open Access Journals (Sweden)

Goedele Craye

2015-12-01

Full Text Available In this study, spray drying from aqueous solutions, using the surface-active agent sodium lauryl sulfate (SLS as a solubilizer, was explored as a production method for co-amorphous simvastatin–lysine (SVS-LYS at 1:1 molar mixtures, which previously have been observed to form a co-amorphous mixture upon ball milling. In addition, a spray-dried formulation of SVS without LYS was prepared. Energy-dispersive X-ray spectroscopy (EDS revealed that SLS coated the SVS and SVS-LYS particles upon spray drying. X-ray powder diffraction (XRPD and differential scanning calorimetry (DSC showed that in the spray-dried formulations the remaining crystallinity originated from SLS only. The best dissolution properties and a “spring and parachute” effect were found for SVS spray-dried from a 5% SLS solution without LYS. Despite the presence of at least partially crystalline SLS in the mixtures, all the studied formulations were able to significantly extend the stability of amorphous SVS compared to previous co-amorphous formulations of SVS. The best stability (at least 12 months in dry conditions was observed when SLS was spray-dried with SVS (and LYS. In conclusion, spray drying of SVS and LYS from aqueous surfactant solutions was able to produce formulations with improved physical stability for amorphous SVS.

Characterization of Amorphous and Co-Amorphous Simvastatin Formulations Prepared by Spray Drying.

Science.gov (United States)

Craye, Goedele; Löbmann, Korbinian; Grohganz, Holger; Rades, Thomas; Laitinen, Riikka

2015-12-03

In this study, spray drying from aqueous solutions, using the surface-active agent sodium lauryl sulfate (SLS) as a solubilizer, was explored as a production method for co-amorphous simvastatin-lysine (SVS-LYS) at 1:1 molar mixtures, which previously have been observed to form a co-amorphous mixture upon ball milling. In addition, a spray-dried formulation of SVS without LYS was prepared. Energy-dispersive X-ray spectroscopy (EDS) revealed that SLS coated the SVS and SVS-LYS particles upon spray drying. X-ray powder diffraction (XRPD) and differential scanning calorimetry (DSC) showed that in the spray-dried formulations the remaining crystallinity originated from SLS only. The best dissolution properties and a "spring and parachute" effect were found for SVS spray-dried from a 5% SLS solution without LYS. Despite the presence of at least partially crystalline SLS in the mixtures, all the studied formulations were able to significantly extend the stability of amorphous SVS compared to previous co-amorphous formulations of SVS. The best stability (at least 12 months in dry conditions) was observed when SLS was spray-dried with SVS (and LYS). In conclusion, spray drying of SVS and LYS from aqueous surfactant solutions was able to produce formulations with improved physical stability for amorphous SVS.

Towards quantitative three-dimensional characterisation of buried InAs quantum dots

DEFF Research Database (Denmark)

Kadkhodazadeh, Shima; Semenova, Elizaveta; Schubert, Martin

2011-01-01

InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological...... and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical...... characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe...

Towards quantitative three-dimensional characterisation of buried InAs quantum dots

International Nuclear Information System (INIS)

Kadkhodazadeh, S; Dunin-Borkowski, R E; Semenova, E S; Schubert, M; Yvind, K; Thuvander, M; Stiller, K M

2011-01-01

InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.

Production-Worthy USJ Formation by Self-Regulatory Plasma Doping Method

International Nuclear Information System (INIS)

Sasaki, Y.; Ito, H.; Okashita, K.; Tamura, H.; Jin, C. G.; Mizuno, B.; Okumura, T.; Aiba, I.; Sauddin, H.; Iwai, H.; Fukagawa, Y.; Tsutsui, K.

2006-01-01

A new method of plasma doping that achieves tight control on dosimetry and uniformity has been developed. It uses a self-regulatory behavior of plasma processes that brings high accuracy on dose control and uniformity within 1.5%. The largest advantage of this self-regulatory plasma doping (SRPD) is that the accuracy of the process control is much less dependent on the uniformity of the plasma, which makes a revolutionary difference to the plasma process as it becomes free from the primary hardware constraint. A typical doping of boron using B2H6/He gas mixture at dose of 1x1015 ions/cm2 can achieve a uniformity of less than 1.5% across a 300mm silicon wafer when the plasma uniformity above the wafer plane is as poor as 10%. The SRPD process also forms very abrupt junctions such as less than 2nm/decade at the junction depth of 10nm due to an instantaneous amorphization of the wafer surface within the first 5 seconds of the process duration. Combined with the throughput advantage at low energy against the conventional ion implantation, the SRPD offers an ideal performance for USJ formation for 45nm technology node and beyond

Characterization of proton conducting blend polymer electrolyte using PVA-PAN doped with NH{sub 4}SCN

Energy Technology Data Exchange (ETDEWEB)

Premalatha, M. [PG & Research Department of Physics, N.M.S.S.Vellaichamy Nadar College, Madurai-625 019 (India); Materials Research Center, Coimbatore-641 045 (India); Mathavan, T., E-mail: tjmathavan@gmail.com, E-mail: kingslin.genova20@gmail.com [PG & Research Department of Physics, N.M.S.S.Vellaichamy Nadar College, Madurai-625 019 (India); Selvasekarapandian, S. [Materials Research Center, Coimbatore-641 045 (India); Genova, F. Kingslin Mary, E-mail: tjmathavan@gmail.com, E-mail: kingslin.genova20@gmail.com; Umamaheswari, R. [Department of physics, S.F.R College for Women, Sivakasi-626 128 (India)

2016-05-23

Polymer electrolytes with proton conductivity based on blend polymer using polyvinyl alcohol (PVA) and poly acrylo nitrile (PAN) doped with ammonium thiocyanate have been prepared by solution casting method using DMF as solvent. The complex formation between the blend polymer and the salt has been confirmed by FTIR Spectroscopy. The amorphous nature of the blend polymer electrolytes have been confirmed by XRD analysis. The highest conductivity at 303 K has been found to be 3.25 × 10{sup −3} S cm{sup −1} for 20 mol % NH{sub 4}SCN doped 92.5PVA:7.5PAN system. The increase in conductivity of the doped blend polymer electrolytes with increasing temperature suggests the Arrhenius type thermally activated process. The activation energy is found to be low (0.066 eV) for the highest conductivity sample.

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

International Nuclear Information System (INIS)

Zhang, Y.; Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.; Zhu, R.

2015-01-01

A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters

Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: multi-parameter measurement reliability and precision studies.

Science.gov (United States)

Zhang, Y; Melnikov, A; Mandelis, A; Halliop, B; Kherani, N P; Zhu, R

2015-03-01

A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

Doping w sporcie jako problem etyczno-społeczny = Doping in sport as a problem ethical and social

Directory of Open Access Journals (Sweden)

Aleksandra Lewandowska

2016-07-01

  Streszczenie: Celem pracy jest omówienie zagadnienia dopingu stosowanego w sporcie w kontekście prawdopodobnych konsekwencji społecznych związanych z jego stosowaniem, jak również na płaszczyźnie biomedycznej związanej z dynamicznym rozwojem technologii biomedycznych w obszarze wzmocnień ludzkiego organizmu. Poza analizą zagadnienia jakości „zdopingowanego sportu” w perspektywie rozstrzygnięć bioetycznych w tekście przywołane zostały statystyki ukazujące zastosowanie dopingu w sporcie, w ujęciu tak czasowym, jak również przestrzennym.   Słowa kluczowe: sport, doping, doping genetyczny, etyka w sporcie, jakość w sporcie.   Abstract: The article presents the issues of doping in sport used in the context of possible social consequences associated with its use, as well as at the level of biomedical related to the rapid development of biomedical technologies in area of human  body enhancement. In addition to the analysis of quality issues "sport enhancement" in the perspective of bioethical resolving, in the text refers to statistics showing the use of doping in sport, in terms both time as well as spatial.   Key words: sports, doping, gene doping, ethics in sport, quality in sport.

Superconductivity and magnetism in Ir-doped GdFeAsO

International Nuclear Information System (INIS)

Cui, Y.J.; Chen, Y.L.; Cheng, C.H.; Yang, Y.; Jiang, J.; Wang, Y.Z.; Zhang, Y.; Zhao, Y.

2010-01-01

The 5d-transition metal, Ir has successfully been doped at Fe site and induced superconductivity in GdFeAsO at T c = 18.9 K and ∼20 atom%. The Ir-doping shortened the c-axis length and stretched the a-axis one, which led to enhance the coupling between the FeAs- and SmO-layer, and to weaken the bonding between Fe and As atom. Paramagnetism was observed in all of the samples, which was resulted from the magnetic Gd ion as in the F-doped GdFeAsO. An upper critical field of GdFe 0.8 Ir 0.2 AsO was extrapolated to around 24 T, much smaller than that of F-doped GdFeAsO owing to a relatively low T c and small value of dH c2 /dT.

Contemporary Management of Adult Acquired Buried Penis.

Science.gov (United States)

Jun, M S; Gallegos, M A; Santucci, R A

2018-04-06

In 2014, The World Health Organization reported that 1.9 billion adults, 39% of the population, were overweight or obese [1]. Unlike most complications of obesity, adult acquired buried penis is an uncomfortable topic which may be overlooked. Patients are often encouraged to lose weight, but this is futile. Simple weight loss will not cure buried penis, as it is a multifactorial condition caused by a combination of: a) overhanging escutcheon from overweight, b) lichen sclerosus, which often contracts and destroys the penile shaft skin, and c) loss of normal penile shaft attachments to the penile skin. This article is protected by copyright. All rights reserved. This article is protected by copyright. All rights reserved.

A fully coupled finite element model for stress distribution in buried gas pipeline

International Nuclear Information System (INIS)

Yahya Sukirman; Zainal Zakaria; Woong Soon Yue

2001-01-01

The study of stress-strain relationship is very important in many designs of buried structures over the years. The behavior and mechanism between the interaction of soil and buried structures such as a natural pipeline will mostly contributes to the integrity of the pipeline. This paper presents a fully coupled finite element of consolidation analysis model to study the stress-strain distribution along a buried pipeline before it excess its maximum deformation limit. The behavior of the soil-pipeline system can be modelled by a non-linear elasto-plastic based on Mohr-Coulomb and critical state yield surfaces. The deformation and deflection of the pipeline due to drained and external loading condition will be considered here. Finally the stress-strain distribution of the buried pipeline will be utilised to obtain the maximum deformation limit and the deflection of the buried pipeline. (Author)

Amorphous iron (II) carbonate

DEFF Research Database (Denmark)

Sel, Ozlem; Radha, A.V.; Dideriksen, Knud

2012-01-01

Abstract The synthesis, characterization and crystallization energetics of amorphous iron (II) carbonate (AFC) are reported. AFC may form as a precursor for siderite (FeCO3). The enthalpy of crystallization (DHcrys) of AFC is similar to that of amorphous magnesium carbonate (AMC) and more...

Direct and inverse Staebler-Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

International Nuclear Information System (INIS)

Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Brochero, J.; Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Sobron, M.

2011-01-01

The photo-response behaviour of Amorphous Silicon Position Detectors (ASPDs) under prolonged illumination with a 681 nm diode-laser and a 633 nm He-Ne laser is presented. Both direct and inverse Staebler-Wronski effects are observed.

Theory of amorphous ices.

Science.gov (United States)

Limmer, David T; Chandler, David

2014-07-01

We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens.

Buried Object Detection Method Using Optimum Frequency Range in Extremely Shallow Underground

Science.gov (United States)

Sugimoto, Tsuneyoshi; Abe, Touma

2011-07-01

We propose a new detection method for buried objects using the optimum frequency response range of the corresponding vibration velocity. Flat speakers and a scanning laser Doppler vibrometer (SLDV) are used for noncontact acoustic imaging in the extremely shallow underground. The exploration depth depends on the sound pressure, but it is usually less than 10 cm. Styrofoam, wood (silver fir), and acrylic boards of the same size, different size styrofoam boards, a hollow toy duck, a hollow plastic container, a plastic container filled with sand, a hollow steel can and an unglazed pot are used as buried objects which are buried in sand to about 2 cm depth. The imaging procedure of buried objects using the optimum frequency range is given below. First, the standardized difference from the average vibration velocity is calculated for all scan points. Next, using this result, underground images are made using a constant frequency width to search for the frequency response range of the buried object. After choosing an approximate frequency response range, the difference between the average vibration velocity for all points and that for several points that showed a clear response is calculated for the final confirmation of the optimum frequency range. Using this optimum frequency range, we can obtain the clearest image of the buried object. From the experimental results, we confirmed the effectiveness of our proposed method. In particular, a clear image of the buried object was obtained when the SLDV image was unclear.

Risk and cost tradeoffs for remote retrieval of buried waste

Energy Technology Data Exchange (ETDEWEB)

Hyde, R.A.; Grienbenow, B.E.; Nickelson, D.F.

1994-12-31

The Buried Waste Integrated Demonstration is supporting the development, demonstration, testing, and evaluation of a suite of technologies that, when integrated with commercially available technologies, form a comprehensive system for the remediation of radioactive and hazardous buried waste. As a part of the program`s technology development, remote retrieval equipment is being developed and tested for the remediation of buried waste. During remedial planning, several factors are considered when choosing remote versus manual retrieval systems. Time that workers are exposed to radioactivity, chemicals, air particulate, and industrial hazards is one consideration. The generation of secondary waste is also a consideration because it amounts to more waste to treat and some wastes may require special handling or treatment. Cost is also a big factor in determining whether remote or manual operations will be used. Other considerations include implementability, effectiveness, and the number of required personnel. This paper investigates each of these areas to show the risk and cost benefits and limitations for remote versus manual retrieval of buried waste.

Buried waste remediation: A new application for in situ vitrification

International Nuclear Information System (INIS)

Kindle, C.H.; Thompson, L.E.

1991-04-01

Buried wastes represent a significant environmental concern and a major financial and technological challenge facing many private firms, local and state governments, and federal agencies. Numerous radioactive and hazardous mixed buried waste sites managed by the US Department of Energy (DOE) require timely clean up to comply with state or federal environmental regulations. Hazardous wastes, biomedical wastes, and common household wastes disposed at many municipal landfills represent a significant environmental health concern. New programs and regulations that result in a greater reduction of waste via recycling and stricter controls regarding generation and disposal of many wastes will help to stem the environmental consequences of wastes currently being generated. Groundwater contamination, methane generation, and potential exposures to biohazards and chemically hazardous materials from inadvertent intrusion will continue to be potential environmental health consequences until effective and permanent closure is achieved. In situ vitrification (ISV) is being considered by the DOE as a permanent closure option for radioactive buried waste sites. The results of several ISV tests on simulated and actual buried wastes conducted during 1990 are presented here. The test results illustrate the feasibility of the ISV process for permanent remediation and closure of buried waste sites in commercial landfills. The tests were successful in immobilizing or destroying hazardous and radioactive contaminants while providing up to 75 vol % waste reduction. 6 refs., 7 figs., 5 tabs

Fundamentals of amorphous solids structure and properties

CERN Document Server

Stachurski, Zbigniew H

2014-01-01

Long awaited, this textbook fills the gap for convincing concepts to describe amorphous solids. Adopting a unique approach, the author develops a framework that lays the foundations for a theory of amorphousness. He unravels the scientific mysteries surrounding the topic, replacing rather vague notions of amorphous materials as disordered crystalline solids with the well-founded concept of ideal amorphous solids. A classification of amorphous materials into inorganic glasses, organic glasses, glassy metallic alloys, and thin films sets the scene for the development of the model of ideal amorph

Seismic response of buried pipelines: a state-of-the-art review

International Nuclear Information System (INIS)

Datta, T.K.

1999-01-01

A state-of-the-art review of the seismic response of buried pipelines is presented. The review includes modeling of soil-pipe system and seismic excitation, methods of response analysis of buried pipelines, seismic behavior of buried pipelines under different parametric variations, seismic stresses at the bends and intersections of network of pipelines. pipe damage in earthquakes and seismic risk analysis of buried pipelines. Based on the review, the future scope of work on the subject is outlined. (orig.)

Superconductivity and magnetism in Ir-doped GdFeAsO

Energy Technology Data Exchange (ETDEWEB)

Cui, Y.J.; Chen, Y.L. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [School of Materials Science and Engineering, University of New South Wales, Sydney 2052 NSW (Australia); Yang, Y.; Jiang, J.; Wang, Y.Z.; Zhang, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Y., E-mail: yzhao@swjtu.edu.c [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052 NSW (Australia)

2010-11-01

The 5d-transition metal, Ir has successfully been doped at Fe site and induced superconductivity in GdFeAsO at T{sub c} = 18.9 K and {approx}20 atom%. The Ir-doping shortened the c-axis length and stretched the a-axis one, which led to enhance the coupling between the FeAs- and SmO-layer, and to weaken the bonding between Fe and As atom. Paramagnetism was observed in all of the samples, which was resulted from the magnetic Gd ion as in the F-doped GdFeAsO. An upper critical field of GdFe{sub 0.8}Ir{sub 0.2}AsO was extrapolated to around 24 T, much smaller than that of F-doped GdFeAsO owing to a relatively low T{sub c} and small value of dH{sub c2}/dT.

Synthesis and properties of Co-doped titanate nanotubes and their optical sensitization with methylene blue

International Nuclear Information System (INIS)

Ferreira, V.C.; Nunes, M.R.; Silvestre, A.J.; Monteiro, O.C.

2013-01-01

Here we report on a novel chemical route to synthesize homogenous cobalt-doped titanate nanotubes (CoTNT), using an amorphous Co-doped precursor. The influence of the synthesis temperature, autoclave dwell time and metal doping on the structural and microstructural as well as on the optical properties of the synthesized titanate nanotubes is studied and discussed. The optical band gaps of the CoTNT samples are red shifted in comparison with the values determined for the undoped samples, such red shifts bringing the absorption edge of the CoTNT samples into the visible region. CoTNT materials also demonstrate particular high adsorption ability for methylene blue, the amount of the adsorbed dye being higher than the one predictable for a monolayer formation. This suggests the possibility of intercalation of the dye molecule between the TiO 6 layers of the TNT structure. It is also shown that the methylene blue sensitized Co-doped nanostructures are highly stable under UV radiation and present a strong and broad absorption in the visible region. - Highlights: • New hydrothermal chemical route to synthesize cobalt-doped titanate nanotubes. • The Co-doping stabilizes the TNTs morphology in a temperature range of 160–200 °C. • Optical band gaps of CoTNTs are red shifted compared to the TNT samples. • Methylene blue sensitized CoTNTs are highly stable under UV–vis irradiation

Synthesis and properties of Co-doped titanate nanotubes and their optical sensitization with methylene blue

Energy Technology Data Exchange (ETDEWEB)

Ferreira, V.C. [University of Lisbon, Faculty of Sciences, Department of Chemistry and Biochemistry and CQB, Campo Grande, 1749-016 Lisboa (Portugal); Nunes, M.R. [University of Lisbon, Faculty of Sciences, Department of Chemistry and Biochemistry and CCMM, Campo Grande, 1749-016 Lisboa (Portugal); Silvestre, A.J. [Instituto Superior de Engenharia de Lisboa, Department of Physics and ICEMS, R. Conselheiro Emídio Navarro 1, 1959-007 Lisboa (Portugal); Monteiro, O.C., E-mail: ocmonteiro@fc.ul.pt [University of Lisbon, Faculty of Sciences, Department of Chemistry and Biochemistry and CQB, Campo Grande, 1749-016 Lisboa (Portugal)

2013-10-01

Here we report on a novel chemical route to synthesize homogenous cobalt-doped titanate nanotubes (CoTNT), using an amorphous Co-doped precursor. The influence of the synthesis temperature, autoclave dwell time and metal doping on the structural and microstructural as well as on the optical properties of the synthesized titanate nanotubes is studied and discussed. The optical band gaps of the CoTNT samples are red shifted in comparison with the values determined for the undoped samples, such red shifts bringing the absorption edge of the CoTNT samples into the visible region. CoTNT materials also demonstrate particular high adsorption ability for methylene blue, the amount of the adsorbed dye being higher than the one predictable for a monolayer formation. This suggests the possibility of intercalation of the dye molecule between the TiO{sub 6} layers of the TNT structure. It is also shown that the methylene blue sensitized Co-doped nanostructures are highly stable under UV radiation and present a strong and broad absorption in the visible region. - Highlights: • New hydrothermal chemical route to synthesize cobalt-doped titanate nanotubes. • The Co-doping stabilizes the TNTs morphology in a temperature range of 160–200 °C. • Optical band gaps of CoTNTs are red shifted compared to the TNT samples. • Methylene blue sensitized CoTNTs are highly stable under UV–vis irradiation.

Defects study of hydrogenated amorphous silicon samples and their relation with the substrate and deposition conditions

International Nuclear Information System (INIS)

Darwich, R.

2009-07-01

The goal of this work is to study the properties of the defects aiming to explore the types of defects and the effect of various deposition parameters such as substrate temperature, the kind of the substrate, gas pressure and deposition rate. Two kinds of samples have been used; The first one was a series of Schottky diodes, and the second one a series of solar cells (p-i-n junction) deposited on crystalline silicon or on corning glass substrates with different deposition parameters. The deposition parameters were chosen to obtain materials whose their structures varying from amorphous to microcrystalline silicon including polymorphous silicon. Our results show that the polymorphous silicon samples deposited at high deposition rates present the best photovoltaic properties in comparison with those deposited at low rates. Also we found that the defects concentration in high deposition rate samples is less at least by two orders than that obtained in low deposition rate polymorphous, microcrystalline and amorphous samples. This study shows also that there is no effect of the substrate, or the thin films of highly doped amorphous silicon deposited on the substrate, on the creation and properties of these defects. Finally, different experimental methods have been used; a comparison between their results has been presented. (author)

Molecular modeling of the conductivity changes of the emeraldine base polyaniline due to protonic acid doping

NARCIS (Netherlands)

Chen, X.; Yuan, C.A.; Wong, C.K.Y.; Zhang, G.

2012-01-01

We propose a molecular modeling strategy, which is capable of predicting the conductivity change of emeraldine base polyaniline polymer due to different degree of protonic acid doping. The method is comprised of two key steps: (1) generating the amorphous unit cells with given number of polymer

Nitrogen-doped graphene forests as electrodes for high-performance wearable supercapacitors

International Nuclear Information System (INIS)

Wang, Mei; Ma, Yifei

2017-01-01

Highlights: •N-doped graphene forest (GF) is successfully synthesized by in-situ PECVD process. •Morphology of N-doped GF electrode realizes a better in-plane electron transfer. •Areal and volumetric capacitances increase 26% and 89% by the N-doping of GF. •Energy and power densities increase 87% and 50% by the N-doping of GF. •The N-doped GF-based EDLC shows excellent bendability and reliable durability. -- Abstract: Recently, a graphene forest (GF) is synthesized by a plasma enhanced chemical vapor deposition (PECVD) process, which subverts the stereotyped morphology of vertical graphene. The GF is demonstrated to possess excellent performance in flexible and bendable electrical double-layer capacitors (EDLCs). In this work, synthesis process of the GF has been optimized and N-doped GF is successfully achieved by introducing NH 3 as the nitrogen precursor during the PECVD process. The N-doping obviously affects the morphology of the GF and the in-plane conductivity of GF is desirably enhanced. The specific area capacitances and volumetric capacitances of N-doped GF-based EDLC increases 26% and 89% in average, respectively, at different current densities compared with the non-doped GF-based EDLC. In addition, both the energy and power densities are improved, and impressively, the energy densities improve 87% by the N-doping of GF electrodes. The GF-based EDLC also provides the desirable stability that no degradation can be observed within 10,000 cycles. Finally, the flexible N-doped GF-based EDLC is also tested as a wearable supercapacitor, exhibiting no capacitance decrease under the dynamic bending situation. Our approach to synthesize the N-doped GF electrodes can achieve the fine-scale nano-structured GF electrodes and provide a new way forward for improved energy storage devices.

Technical Review on Fitness-for-Service for Buried Pipe by ASME Code Case N-806

International Nuclear Information System (INIS)

Park, Sang Kyu; Lee, Yo Seop; So, Il Su; Lim, Bu Taek

2012-01-01

Fitness-for-Service is a useful technology to determine replacement timing, next inspection timing or in-service when nuclear power plant's buried pipes are damaged. If is possible for buried pipes to be aged by material loss, cracks and occlusion as operating time goes by. Therefore Fitness-for-Service technology for buried pipe is useful for plant industry to perform replacement and repair. Fitness-for-Service for buried pipe is studied in terms of existing code and standard for Fitness-for-Service and a current developing code case. Fitness-for-Service for buried pipe was performed according to Code Case N-806 developed by ASME (American Society of Mechanical Engineers)

The initiation and linkage of surface fractures above a buried strike ...

Indian Academy of Sciences (India)

a buried strike-slip fault: An experimental approach. N Ghosh and A ... conditions viz., (i) heterogeneous simple shear of the cover rocks above a buried strike slip fault. (wrench .... (iii) study of fracture types in the damage zones from Gozo .... was dominant, the results may vary from a true ... For example, as shown in figure 5 ...

The acute and long-term neurotoxic effects of MDMA on marble burying behaviour in mice.

Science.gov (United States)

Saadat, Kathryn S; Elliott, J Martin; Colado, M Isabel; Green, A Richard

2006-03-01

When mice are exposed to harmless objects such as marbles in their cage they bury them, a behaviour sometimes known as defensive burying. We investigated the effect of an acute dose of MDMA (èecstasy') and other psychoactive drugs on marble burying and also examined the effect of a prior neurotoxic dose of MDMA or p-chloroamphetamine (PCA) on burying. Acute administration of MDMA produced dose-dependent inhibition of marble burying (EC50: 7.6 micro mol/kg). Other drugs that enhance monoamine function also produced dose-dependent inhibition: methamphetamine PCA paroxetine MDMA GBR 12909 methylphenidate. None of these drugs altered locomotor activity at a dose that inhibited burying. A prior neurotoxic dose of MDMA, which decreased striatal dopamine content by 60%, but left striatal 5-HT content unaltered, did not alter spontaneous marble burying 18 or 40 days later. However, a neurotoxic dose of PCA which decreased striatal dopamine by 60% and striatal 5-HT by 70% attenuated marble burying 28 days later. Overall, these data suggest that MDMA, primarily by acutely increasing 5-HT function, acts like several anxiolytic drugs in this behavioural model. Long-term loss of cerebral 5-HT content also produced a similar effect. Since this change was observed only after 28 days, it is probably due to an adaptive response in the brain.

Lignocellulose-derived porous phosphorus-doped carbon as advanced electrode for supercapacitors

Science.gov (United States)

Yi, Jianan; Qing, Yan; Wu, ChuTian; Zeng, Yinxiang; Wu, Yiqiang; Lu, Xihong; Tong, Yexiang

2017-05-01

Engineering porous heteroatom-doped carbon nanomaterials with remarkable capacitive performance is highly attractive. Herein, a simple and smart method has been developed to synthesize phosphorus (P) doped carbon with hierarchical porous structure derived from lignocellulose. Hierarchically porous P doped carbon is readily obtained by the pyrolysis of lignocellulose immersed in ZnCl2/NaH2PO4 aqueous solution, and exhibits excellent capacitive properties. The as-obtained P doped porous carbon delivers a significant capacitance of 133 F g-1 (146 mF cm-2) at a high current density of 10 A g-1 with outstanding rate performance. Furthermore, the P doped carbon electrode yields a long-term cycling durability with more than 97.9% capacitance retention after 10000 cycles as well. A symmetric supercapacitor with a maximum energy density of 4.7 Wh kg-1 is also demonstrated based on these P doped carbon electrodes.

Effects of Iodine Doping on Optoelectronic and Chemical Properties of Polyterpenol Thin Films

Directory of Open Access Journals (Sweden)

Kateryna Bazaka

2017-01-01

Full Text Available Owing to their amorphous, highly cross-liked nature, most plasma polymers display dielectric properties. This study investigates iodine doping as the means to tune optoelectronic properties of plasma polymer derived from a low-cost, renewable resource, i.e., Melaleuca alternifolia oil. In situ exposure of polyterpenol to vapors of electron-accepting dopant reduced the optical band gap to 1.5 eV and increased the conductivity from 5.05 × 10−8 S/cm to 1.20 × 10−6 S/cm. The increased conductivity may, in part, be attributed to the formation of charge-transfer complexes between the polymer chain and halogen, which act as a cation and anion, respectively. Higher levels of doping notably increased the refractive index, from 1.54 to 1.70 (at 500 nm, and significantly reduced the transparency of films.

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Dhifallah, I., E-mail: ines.dhifallah@gmail.co [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Daoudi, M.; Bardaoui, A. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia); Eljani, B. [Unite de recherche sur les Hetero-Epitaxie et Applications, Faculte des Sciences de Monastir (Tunisia); Ouerghi, A. [Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay 91 46a0, Marcoussis (France); Chtourou, R. [Laboratoire de Photovoltaique, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l' energie, BP 95 Hammam-Lif 2050 (Tunisia)

2011-05-15

Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E{sub e-hh}) and electron-light-hole (E{sub e-lh}) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-{delta}-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-{delta}-doped samples, we have determined the internal electric field introduced by ionized Si-{delta}-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: {yields} Studying HEMTs structures with different silicon doping content. {yields} An increase of the electric field in the InAs layer with increasing Si content. {yields} The interband energy transitions in the HEMTs structures have been obtained from PR. {yields} Experimental and theoretical values of transitions energies were in good agreement.

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

International Nuclear Information System (INIS)

Dhifallah, I.; Daoudi, M.; Bardaoui, A.; Eljani, B.; Ouerghi, A.; Chtourou, R.

2011-01-01

Photoreflectance and photoluminescence studies were performed to characterize InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs high electron mobility transistors. These structures were grown by Molecular Beam Epitaxy on (1 0 0) oriented GaAs substrates with different silicon-delta-doped layer densities. Interband energy transitions in the InAs ultrathin layer quantum well were observed below the GaAs band gap in the photoreflectance spectra, and assigned to electron-heavy-hole (E e-hh ) and electron-light-hole (E e-lh ) fundamental transitions. These transitions were shifted to lower energy with increasing silicon-δ-doping density. This effect is in good agreement with our theoretical results based on a self-consistent solution of the coupled Schroedinger and Poisson equations and was explained by increased escape of photogenerated carriers and enhanced Quantum Confined Stark Effect in the Si-delta-doped InAs/GaAs QW. In the photoreflectance spectra, not only the channel well interband energy transitions were observed, but also features associated with the GaAs and AlGaAs bulk layers located at about 1.427 and 1.8 eV, respectively. By analyzing the Franz-Keldysh Oscillations observed in the spectral characteristics of Si-δ-doped samples, we have determined the internal electric field introduced by ionized Si-δ-doped centers. We have observed an increase in the electric field in the InAs ultrathin layer with increasing silicon content. The results are explained in terms of doping dependent ionized impurities densities and surface charges. - Research highlights: → Studying HEMTs structures with different silicon doping content. → An increase of the electric field in the InAs layer with increasing Si content. → The interband energy transitions in the HEMTs structures have been obtained from PR. → Experimental and theoretical values of transitions energies were in good agreement.

A clean measurement of the hydrogen retardation of the rate of solid phase epitaxy in silicon

International Nuclear Information System (INIS)

Liu, A.C.Y.; McCallum, J.C.

1999-01-01

The rate retarding effects of the impurity hydrogen on solid phase epitaxy (SPE) in silicon have yet to be completely understood. Existing measurements of this behaviour do not coincide exactly, however, several features have attained prominence. Firstly, a linear decrease in the SPE rate is detected up until a certain concentration of hydrogen. Subsequent to this point the rate remains almost constant at around half the intrinsic rate. It is conjectured that the hydrogen bonds to and passivates the defects whose agency enables the incorporation of atoms from the amorphous phase to the crystalline. This rate reduction increases until the defect population is saturated. At this point the reduction in rate ceases. Secondly, a dependence on temperature has not been consolidated, in contrast with the trends observed with the doping species. Here a method is proposed for producing a controlled concentration of hydrogen for the advancing amorphous/crystalline interface to encounter during epitaxy. A bubble layer is formed in crystalline silicon approximately 0.6μm beneath the surface through the implantation of hydrogen at 65 keV with fluences of 4 x 10 16 /cm 2 and 3 x 10 16 /cm 2 and annealing for 1 hour at 850 deg C in dry argon. The anneal doesn't out gas all the introduced hydrogen, leaving a remnant gas pressure in the bubbles. The hydrogen implants at the two fluences should yield two samples with different amounts of hydrogen trapped in the bubbles. A buried amorphous layer is created to encompass the bubble layer containing this residual contaminant through silicon self implantation at appropriate energies and fluences. The progress of the front interface of the buried amorphous layer is monitored by time resolved reflectivity (TRR) as SPE is effected at various temperatures

Displaced humeral lateral condyle fractures in children: should we bury the pins?

Science.gov (United States)

Das De, Soumen; Bae, Donald S; Waters, Peter M

2012-09-01

The purpose of this investigation was to determine if leaving Kirschner wires exposed is more cost-effective than burying them subcutaneously after open reduction and internal fixation (ORIF) of humeral lateral condyle fractures. A retrospective cohort study of all lateral condyle fractures treated over a 10-year period at a single institution was performed. Data on surgical technique, fracture healing, and complications were analyzed, as well as treatment costs. A decision analysis model was then constructed to compare the strategies of leaving the pins exposed versus buried. Finally, sensitivity analyses were performed, assessing cost-effectiveness when infection rates and costs of treating deep infections were varied. A total of 235 children with displaced fractures were treated with ORIF using Kirschner wires. Pins were left exposed in 41 cases (17.4%) and buried in 194 cases (82.6%); the age, sex, injury mechanisms, and fracture patterns were similar in both the groups. The median time to removal of implants was shorter with exposed versus buried pins (4 vs. 6 wk, Pfracture union or loss of reduction rates. The rate of superficial infection was higher with exposed pins (9.8% vs. 3.1%), but this was not statistically significant (P=0.076). There were no deep infections with exposed pins, whereas the rate of deep infection was 0.5% with buried pins (P=1.00). Buried pins were associated with additional complications, including symptomatic implants (7.2%); pins protruding through the skin (16%); internal pin migration necessitating additional surgery (1%); and skin necrosis (1%). The decision analysis revealed that leaving pins exposed resulted in an average cost savings of $3442 per patient. This strategy remained cost-effective even when infection rates with exposed pins approached 40%. Leaving the pins exposed after ORIF of lateral condyle fractures is safe and more cost-effective than burying the pins subcutaneously. Retrospective cohort study (level III).

Superparamagnetic behavior of Fe-doped SnO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Hachisu, M.; Onuma, K.; Kondo, T.; Miike, K.; Miyasaka, T.; Mori, K.; Ichiyanagi, Y. [Department of Physics, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501 (Japan)

2014-02-20

SnO{sub 2} is an n-type semiconductor with a wide band gap of 3.62 eV, and SnO{sub 2} nanoparticles doped with magnetic ions are expected to realized new diluted magnetic semiconductors (DMSs). Realizing ferromagnetism at room temperature is important for spintronics device applications, and it is interesting that the magnetic properties of these DMS systems can be varied significantly by modifying the preparation methods or conditions. In this study, the magnetic properties of Fe-doped (3% and 5%) SnO{sub 2} nanoparticles, prepared using our novel chemical preparation method and encapsulated in amorphous SiO{sub 2}, were investigated. The particle size (1.8–16.9 nm) and crystal phase were controlled by the annealing temperature. X-ray diffraction confirmed a rutile SnO{sub 2} single-phase structure for samples annealed at 1073–1373 K, and the composition was confirmed using X-ray fluorescence analysis. SQUID magnetometer measurements revealed superparamagnetic behavior of the 5%-Fe-doped sample at room temperature, although SnO{sub 2} is known to be diamagnetic. Magnetization curves at 5 K indicated that the 3%-Fe-doped has a larger magnetization than that of the 5%-Fe-doped sample. We conclude that the magnetization of the 5%-Fe-doped sample decreased at 5 K due to the superexchange interaction between the antiferromagnetic coupling in the nanoparticle system.

Green synthesis of sulfur- and nitrogen-co-doped carbon dots using ionic liquid as a precursor and their application in Hg2+ detection

International Nuclear Information System (INIS)

Zhuo, Kelei; Sun, Dong; Xu, Panpan; Wang, Chunfeng; Cao, Yingying; Chen, Yujuan; Liu, Jianming

2017-01-01

A facile and environment-friendly method was developed to synthesize sulfur- and nitrogen-co-doped carbon dots (S/N-CDs) via one step hydrothermal treatment of 1-butyl-3-methylimidazolium 2-amino-3-mercaptopropionic acid salt ionic liquid and polyethylene glycol. It was found that the prepared S/N-CDs were nearly spherical nanoparticles. And then the size of the as-prepared S/N-CDs became smaller with the extension of reaction time, the amorphous carbon was gradually transformed into a crystal structure of carbon dots and a higher reaction temperature favors the formation of carbon dots with higher quantum yields. It was also found that sulfur atoms in the S/N-CDs change the surface structures of CDs to some extent. Higher quantum yield of the S/N-CDs should attribute to the synergistic effect of co-doped nitrogen and sulfur atoms. The S/N-CDs display stable and strong florescence, high water solubility, excitation-dependent emission behavior, particularly the up-conversion photoluminescence performance. Furthermore, the as-prepared S/N-CDs were used as a sensitive probe for Hg 2+ detection in aqueous solutions, with high selectivity and sensitivity. Particularly, the detection limit could reach as low as 0.6 nM (S/N=3).

Novel back-reflector architecture with nanoparticle based buried light-scattering microstructures for improved solar cell performance

Science.gov (United States)

Desta, Derese; Ram, Sanjay K.; Rizzoli, Rita; Bellettato, Michele; Summonte, Caterina; Jeppesen, Bjarke R.; Jensen, Pia B.; Tsao, Yao-Chung; Wiggers, Hartmut; Pereira, Rui N.; Balling, Peter; Larsen, Arne Nylandsted

2016-06-01

A new back-reflector architecture for light-management in thin-film solar cells is proposed that includes a morphologically smooth top surface with light-scattering microstructures buried within. The microstructures are pyramid shaped, fabricated on a planar reflector using TiO2 nanoparticles and subsequently covered with a layer of Si nanoparticles to obtain a flattened top surface, thus enabling growth of good quality thin-film solar cells. The optical properties of this back-reflector show high broadband haze parameter and wide angular distribution of diffuse light-scattering. The n-i-p amorphous silicon thin-film solar cells grown on such a back-reflector show enhanced light absorption resulting in improved external quantum efficiency. The benefit of the light trapping in those solar cells is evidenced by the gains in short-circuit current density and efficiency up to 15.6% and 19.3% respectively, compared to the reference flat solar cells. This improvement in the current generation in the solar cells grown on the flat-topped (buried pyramid) back-reflector is observed even when the irradiation takes place at large oblique angles of incidence. Finite-difference-time-domain simulation results of optical absorption and ideal short-circuit current density values agree well with the experimental findings. The proposed approach uses a low cost and simple fabrication technique and allows effective light manipulation by utilizing the optical properties of micro-scale structures and nanoscale constituent particles.

Buried topography of Utopia, Mars: Persistence of a giant impact depression

International Nuclear Information System (INIS)

McGill, G.E.

1989-01-01

Knobs, partially buried craters, ring fractures, and some mesas permit a qualitative determination of the topography buried beneath younger northern plains materials. These features are widely distributed in the Utopia area but are absent in a large, roughly circular region centered at about 48 degree N, 240 degree W. This implies the existence of a circular depression about 3,300 km in diameter buried beneath Utopia Planitia that is here interpreted to represent the central part of a very large impact basin. The presence of buried curved massifs around part of this depression, and a roughly coincident mascon, lend further support. Present topography, areal geology, and paleotopography of buried surfaces all point to the persistence of this major depression for almost the entire history of Mars

Statistical survey of the buried waters in the Protein Data Bank.

Science.gov (United States)

Carugo, Oliviero

2016-01-01

The structures of buried water molecules were studied in an ensemble of high-quality and non-redundant protein crystal structures. Buried water molecules were clustered and classified in lake-like clusters, which are completely isolated from the bulk solvent, and bay-like clusters, which are in contact with the bulk solvent through a surface water molecule. Buried water molecules are extremely common: lake-like clusters are found in 89 % of the protein crystal structures and bay-like clusters in 93 %. Clusters with only one water molecule are much more common than larger clusters. Both cluster types incline to be surrounded by loop residues, and to a minor extent by residues in extended secondary structure. Helical residues on the contrary do not tend to surround clusters of buried water molecules. One buried water molecule is found every 30-50 amino acid residues, depending on the secondary structures that are more abundant in the protein. Both main- and side-chain atoms are in contact with buried waters; they form four hydrogen bonds with the first water and 1-1.5 additional hydrogen bond for each additional water in the cluster. Consequently, buried water molecules appear to be firmly packed and rigid like the protein atoms. In this regard, it is remarkable to observe that prolines often surround water molecules buried in the protein interior. Interestingly, clusters of buried water molecules tend to be just beneath the protein surface. Moreover, water molecules tend to form a one-dimensional wire rather than more compact arrangements. This agrees with recent evidence of the mechanisms of solvent exchange between internal cavities and bulk solvent.

Iron-based amorphous alloys and methods of synthesizing iron-based amorphous alloys

Science.gov (United States)

Saw, Cheng Kiong; Bauer, William A.; Choi, Jor-Shan; Day, Dan; Farmer, Joseph C.

2016-05-03

A method according to one embodiment includes combining an amorphous iron-based alloy and at least one metal selected from a group consisting of molybdenum, chromium, tungsten, boron, gadolinium, nickel phosphorous, yttrium, and alloys thereof to form a mixture, wherein the at least one metal is present in the mixture from about 5 atomic percent (at %) to about 55 at %; and ball milling the mixture at least until an amorphous alloy of the iron-based alloy and the at least one metal is formed. Several amorphous iron-based metal alloys are also presented, including corrosion-resistant amorphous iron-based metal alloys and radiation-shielding amorphous iron-based metal alloys.

An investigation of hydrogenized amorphous Si structures with Doppler broadening positron annihilation techniques

International Nuclear Information System (INIS)

Petkov, M.P.; Marek, T.; Asoka-Kumar, P.; Lynn, K.G.; Crandall, R.S.; Mahan, A.H.

1998-01-01

In this letter, we examine the feasibility of applying positron annihilation spectroscopy to the study of hydrogenized amorphous silicon (a-Si:H)-based structures produced by chemical vapor deposition techniques. The positron probe, sensitive to open volume formations, is used to characterize neutral and negatively charged silicon dangling bonds, typical for undoped and n-doped a-Si:H, respectively. Using depth profiling along the growth direction a difference was observed in the electronic environment of these defects, which enables their identification in a p-i-n device. copyright 1998 American Institute of Physics

Buried Waste Integrated Demonstration Plan

International Nuclear Information System (INIS)

Kostelnik, K.M.

1991-12-01

This document presents the plan of activities for the Buried Waste Integrated Demonstration (BWID) program which supports the environmental restoration (ER) objectives of the Department of Energy (DOE) Complex. Discussed in this plan are the objectives, organization, roles and responsibilities, and the process for implementing and managing BWID. BWID is hosted at the Idaho National Engineering Laboratory (INEL), but involves participants from throughout the DOE Complex, private industry, universities, and the international community. These participants will support, demonstrate, and evaluate a suite of advanced technologies representing a comprehensive remediation system for the effective and efficient remediation of buried waste. The processes for identifying technological needs, screening candidate technologies for applicability and maturity, selecting appropriate technologies for demonstration, field demonstrating, evaluation of results and transferring technologies to environmental restoration programs are also presented. This document further describes the elements of project planning and control that apply to BWID. It addresses the management processes, operating procedures, programmatic and technical objectives, and schedules. Key functions in support of each demonstration such as regulatory coordination, safety analyses, risk evaluations, facility requirements, and data management are presented

SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

Science.gov (United States)

Myers, John N.; Zhang, Xiaoxian; Huang, Huai; Shobha, Hosadurga; Grill, Alfred; Chen, Zhan

2017-05-01

Molecular structures at the surface and buried interface of an amorphous ultralow-k pSiCOH dielectric film were quantitatively characterized before and after reactive ion etching (RIE) and subsequent dielectric repair using sum frequency generation (SFG) vibrational spectroscopy and Auger electron spectroscopy. SFG results indicated that RIE treatment of the pSiCOH film resulted in a depletion of ˜66% of the surface methyl groups and changed the orientation of surface methyl groups from ˜47° to ˜40°. After a dielectric recovery process that followed the RIE treatment, the surface molecular structure was dominated by methyl groups with an orientation of ˜55° and the methyl surface coverage at the repaired surface was 271% relative to the pristine surface. Auger depth profiling indicated that the RIE treatment altered the top ˜25 nm of the film and that the dielectric recovery treatment repaired the top ˜9 nm of the film. Both SFG and Auger profiling results indicated that the buried SiCNH/pSiCOH interface was not affected by the RIE or the dielectric recovery process. Beyond characterizing low-k materials, the developed methodology is general and can be used to distinguish and characterize different molecular structures and elemental compositions at the surface, in the bulk, and at the buried interface of many different polymer or organic thin films.

Virtual environmental applications for buried waste characterization technology evaluation report

International Nuclear Information System (INIS)

1995-05-01

The project, Virtual Environment Applications for Buried Waste Characterization, was initiated in the Buried Waste Integrated Demonstration Program in fiscal year 1994. This project is a research and development effort that supports the remediation of buried waste by identifying and examining the issues, needs, and feasibility of creating virtual environments using available characterization and other data. This document describes the progress and results from this project during the past year

Virtual environmental applications for buried waste characterization technology evaluation report

Energy Technology Data Exchange (ETDEWEB)

NONE

1995-05-01

The project, Virtual Environment Applications for Buried Waste Characterization, was initiated in the Buried Waste Integrated Demonstration Program in fiscal year 1994. This project is a research and development effort that supports the remediation of buried waste by identifying and examining the issues, needs, and feasibility of creating virtual environments using available characterization and other data. This document describes the progress and results from this project during the past year.

Kelvin probe characterization of buried graphitic microchannels in single-crystal diamond

International Nuclear Information System (INIS)

Bernardi, E.; Battiato, A.; Olivero, P.; Vittone, E.; Picollo, F.

2015-01-01

In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried region. When an electrical current was flowing through the biased buried channel, the structure was clearly evidenced by KPM maps of the electrical potential of the surface region overlying the channel at increasing distances from the grounded electrode. The KPM profiling shows regions of opposite contrast located at different distances from the endpoints of the channel. This effect is attributed to the different electrical conduction properties of the surface and of the buried graphitic layer. The model adopted to interpret these KPM maps and profiles proved to be suitable for the electronic characterization of buried conductive channels, providing a non-invasive method to measure the local resistivity with a micrometer resolution. The results demonstrate the potential of the technique as a powerful diagnostic tool to monitor the functionality of all-carbon graphite/diamond devices to be fabricated by MeV ion beam lithography

Thermoluminescence properties of undoped and nitrogen-doped CVD diamond exposed to gamma radiation

International Nuclear Information System (INIS)

Barboza-Flores, M.; Gastelum, S.; Cruz-Zaragoza, E.; Melendrez, R.; Chernov, V.; Pedroza-Montero, M.; Favalli, A.

2008-01-01

It is known that the thermoluminescence (TL) performance of CVD diamond depends on the impurity concentration and doping materials introduced during growing. We report on the TL properties of undoped and 750 ppm nitrogen-doped CVD diamond grown on (0 0 1) silicon substrate. The samples were exposed to gamma radiation from a Gammacell 200 Nordion irradiator in the 10-500 Gy dose range at 627 mGy/min dose rate. The nitrogen-doped CVD diamond sample exhibited a TL glow curve peaked around 537 K and a small shoulder about 411 K and a linear dose behavior in the 10-60 Gy dose range. In contrast, the undoped specimen showed a 591 K peaked TL glow curve and linear dose response for 10-100 Gy doses. However, both samples displayed a non-linear dose response for doses higher than 100 Gy. The doping effects seem to cause a higher TL efficiency, which may be attributed to the differences in the diamond bonding and amorphous carbon on the CVD samples as well as to the presence of nitrogen. In addition, the nitrogen content may produce some structural and morphological surface effects, which may account for the distinctive TL features and dose response of the diamond samples

Synthesis and characterization of Fe doped cadmium selenide thin films by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in [Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur 413 512, Maharashtra (India)

2012-12-05

Highlights: Black-Right-Pointing-Pointer Simple and inexpensive method to dope trivalent Fe in CdSe thin films. Black-Right-Pointing-Pointer Fe doped CdSe thin films are highly photosensitive. Black-Right-Pointing-Pointer AFM analysis shows uniform deposition of film over the entire substrate surface. Black-Right-Pointing-Pointer The band gap energy decreases from 1.74 to 1.65 eV with Fe doping. Black-Right-Pointing-Pointer Film resistivity decreases to 6.76 Multiplication-Sign 10{sup 4} {Omega}-cm with Fe doping in CdSe thin films. - Abstract: Undoped and Fe doped CdSe thin films have been deposited onto the amorphous and fluorine doped tin oxide coated glass substrates by spray pyrolysis. The Fe doping concentration has been optimized by photoelectrochemical (PEC) characterization technique. The structural, surface morphological, compositional, optical and electrical properties of undoped and Fe doped CdSe thin films have been studied. X-ray diffraction study reveals that the as deposited CdSe films possess hexagonal crystal structure with preferential orientation along (1 0 0) plane. AFM analysis shows uniform deposition of the film over the entire substrate surface with minimum surface roughness of 7.90 nm. Direct allowed type of transition with band gap decreasing from 1.74 to 1.65 eV with Fe doping has been observed. The activation energy of the films has been found to be in the range of 0.14-0.19 eV at low temperature and 0.27-0.44 eV at high temperature. Semi-conducting behavior has been observed from resistivity measurements. The thermoelectric power measurements reveal that the films are of n type.

Development of New Technology for Leak Detection of a Buried Pipe

Energy Technology Data Exchange (ETDEWEB)

Yoon, D. B.; Park, J. H.; Moon, S. S.; Han, S. W.; Kang, T.; Kim, H. J.

2014-01-15

The importance of the leak detection of a buried pipe in a power plant of Korea is being emphasized as the buried pipes of a power plant are more than 20 years old. The first objective of this work is to develop new technologies for leak detection of a buried pipe. The second objective is to design and fabricate a trial product of leakage detection system for buried pipe. To achieve these purposes, as a first step, literature survey of the leak detection methods and techniques has been performed. As an algorithm for enhancing the leak detection capability of newly developed leakage detection system, an algorithm for removing mechanical noise and reflected wave within the pipe has been developed, and its feasibility was verified by performing numerical simulations and experiments. The hardware for leakage detection system is designed as a portable type by considering the test environment of a power plant, where speedy leakage inspection and rapid movement/reinstallation of the inspection equipment is necessary. The software is designed to provide a user-friendly GUI(Graphic User Interface) environment, making the system setup and data display quick and easy. It is also designed to allow for a real time visualization of analysis results on a monitoring screen for an estimation of the leakage location. The feature of the developed leak detection system is that it equipped with noise rejection algorithms that can effectively enhance the leak detection capability in a noisy environment. Then, a trial product of the leakage detection system has been fabricated, and its functionality and capability were verified by field experiments. The experimental results demonstrated that even in a noisy environment, the developed system can provide more reliable means for estimating the leak location of the buried pipe. It is expected that the reliability of leakage point estimation can be enhanced when the developed leak detection system is applied to a leakage estimation problem

Development of New Technology for Leak Detection of a Buried Pipe

International Nuclear Information System (INIS)

Yoon, D. B.; Park, J. H.; Moon, S. S.; Han, S. W.; Kang, T.; Kim, H. J.

2014-01-01

The importance of the leak detection of a buried pipe in a power plant of Korea is being emphasized as the buried pipes of a power plant are more than 20 years old. The first objective of this work is to develop new technologies for leak detection of a buried pipe. The second objective is to design and fabricate a trial product of leakage detection system for buried pipe. To achieve these purposes, as a first step, literature survey of the leak detection methods and techniques has been performed. As an algorithm for enhancing the leak detection capability of newly developed leakage detection system, an algorithm for removing mechanical noise and reflected wave within the pipe has been developed, and its feasibility was verified by performing numerical simulations and experiments. The hardware for leakage detection system is designed as a portable type by considering the test environment of a power plant, where speedy leakage inspection and rapid movement/reinstallation of the inspection equipment is necessary. The software is designed to provide a user-friendly GUI(Graphic User Interface) environment, making the system setup and data display quick and easy. It is also designed to allow for a real time visualization of analysis results on a monitoring screen for an estimation of the leakage location. The feature of the developed leak detection system is that it equipped with noise rejection algorithms that can effectively enhance the leak detection capability in a noisy environment. Then, a trial product of the leakage detection system has been fabricated, and its functionality and capability were verified by field experiments. The experimental results demonstrated that even in a noisy environment, the developed system can provide more reliable means for estimating the leak location of the buried pipe. It is expected that the reliability of leakage point estimation can be enhanced when the developed leak detection system is applied to a leakage estimation problem

Overwintering biology and tests of trap and relocate as a conservation measure for burying beetles.

Science.gov (United States)

2015-01-01

Burying beetles are carrion beetles and utilize dead animal carcasses for feeding : and reproductive efforts. They assist with decomposition, prevent the spread of disease, : and reduce the number of pest species. The largest species of carrion beetl...

Optical properties of erbium-doped porous silicon waveguides

Energy Technology Data Exchange (ETDEWEB)

Najar, A. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France); Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Charrier, J. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France)]. E-mail: joel.charier@univ-rennes1.fr; Ajlani, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Lorrain, N. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France); Elhouichet, H. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Oueslati, M. [Laboratoire de Spectroscopie Raman, Faculte des Sciences de Tunis, 2092 ElManar, Tunis (Tunisia); Haji, L. [Laboratoire d' Optronique UMR 6082-FOTON, Universite de Rennes 1, 6 rue de Kerampont, B P. 80518, 22305 Lannion Cedex (France)

2006-12-15

Planar and buried channel porous silicon waveguides (WG) were prepared from p{sup +}-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl{sub 3}-saturated solution. Erbium concentration of around 10{sup 20} at/cm{sup 3} was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 {mu}s was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

Amorphous nanophotonics

CERN Document Server

Scharf, Toralf

2013-01-01

This book represents the first comprehensive overview over amorphous nano-optical and nano-photonic systems. Nanophotonics is a burgeoning branch of optics that enables many applications by steering the mould of light on length scales smaller than the wavelength with devoted nanostructures. Amorphous nanophotonics exploits self-organization mechanisms based on bottom-up approaches to fabricate nanooptical systems. The resulting structures presented in the book are characterized by a deterministic unit cell with tailored geometries; but their spatial arrangement is not controlled. Instead of periodic, the structures appear either amorphous or random. The aim of this book is to discuss all aspects related to observable effects in amorphous nanophotonic material and aspects related to their design, fabrication, characterization and integration into applications. The book has an interdisciplinary nature with contributions from scientists in physics, chemistry and materials sciences and sheds light on the topic fr...

Visible and infrared photoluminescence from Er-doped SiOx

International Nuclear Information System (INIS)

Wan, J.; Sheng, C.; Lu, F.; Yuan, S.; Gong, D.W.; Liao, L.S.; Fang, Y.L.; Lin, F.; Wang, X.

1998-01-01

The annealing behaviors of photoluminescence of SiO x and Er-doped SiO x grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiO x , four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiO x , the 716 nm band, which is believed to be originated from the electron-hole recombination at the interface between crystalline Si and amorphous SiO 2 , disappears in the annealing temperature range of 500-900C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO 2 to Er ions. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

Amorphous nanoparticles — Experiments and computer simulations

International Nuclear Information System (INIS)

Hoang, Vo Van; Ganguli, Dibyendu

2012-01-01

The data obtained by both experiments and computer simulations concerning the amorphous nanoparticles for decades including methods of synthesis, characterization, structural properties, atomic mechanism of a glass formation in nanoparticles, crystallization of the amorphous nanoparticles, physico-chemical properties (i.e. catalytic, optical, thermodynamic, magnetic, bioactivity and other properties) and various applications in science and technology have been reviewed. Amorphous nanoparticles coated with different surfactants are also reviewed as an extension in this direction. Much attention is paid to the pressure-induced polyamorphism of the amorphous nanoparticles or amorphization of the nanocrystalline counterparts. We also introduce here nanocomposites and nanofluids containing amorphous nanoparticles. Overall, amorphous nanoparticles exhibit a disordered structure different from that of corresponding bulks or from that of the nanocrystalline counterparts. Therefore, amorphous nanoparticles can have unique physico-chemical properties differed from those of the crystalline counterparts leading to their potential applications in science and technology.

Model for amorphous aggregation processes

Science.gov (United States)

Stranks, Samuel D.; Ecroyd, Heath; van Sluyter, Steven; Waters, Elizabeth J.; Carver, John A.; von Smekal, Lorenz

2009-11-01

The amorphous aggregation of proteins is associated with many phenomena, ranging from the formation of protein wine haze to the development of cataract in the eye lens and the precipitation of recombinant proteins during their expression and purification. While much literature exists describing models for linear protein aggregation, such as amyloid fibril formation, there are few reports of models which address amorphous aggregation. Here, we propose a model to describe the amorphous aggregation of proteins which is also more widely applicable to other situations where a similar process occurs, such as in the formation of colloids and nanoclusters. As first applications of the model, we have tested it against experimental turbidimetry data of three proteins relevant to the wine industry and biochemistry, namely, thaumatin, a thaumatinlike protein, and α -lactalbumin. The model is very robust and describes amorphous experimental data to a high degree of accuracy. Details about the aggregation process, such as shape parameters of the aggregates and rate constants, can also be extracted.

Characterization of Parylene as a Water Barrier via Buried-in Pentacene Moisture Sensors for Soaking Tests

OpenAIRE

Lo, Hsi-wen; Tai, Yu-Chong

2007-01-01

We present a simple method to characterize parylene as a water barrier for soaking tests. The key component is the buried-in pentacene moisture sensor, which is a thin-film transistor sandwiched between two layers of parylene C. This pentacene thin-film transistor takes bottom contact configuration and uses parylene C as the gate dielectric material. Parylene films containing pentacene moisture sensors are soaked in saline at room temperature and the saturation drain curr...

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

Science.gov (United States)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Direct current voltage gradient (DCVG) technique as a nondestructive testing tool for locating coating defect of buried pipelines

International Nuclear Information System (INIS)

Muhamad Daud; Mohd Shariff Sattar

2009-04-01

Protection of buried steel pipelines relies upon coating backed up by cathodic protection. All coatings are prone to general deterioration. Coating defects commonly occur as a result of construction damage, and ongoing degradation by environmental factors. Good maintenance and monitoring of protection system is important. (author)

Emerging trends in the stabilization of amorphous drugs.

Science.gov (United States)

Laitinen, Riikka; Löbmann, Korbinian; Strachan, Clare J; Grohganz, Holger; Rades, Thomas

2013-08-30

The number of active pharmaceutical substances having high therapeutic potential but low water solubility is constantly increasing, making it difficult to formulate these compounds as oral dosage forms. The solubility and dissolution rate, and thus potentially the bioavailability, of these poorly water-soluble drugs can be increased by the formation of stabilized amorphous forms. Currently, formulation as solid polymer dispersions is the preferred method to enhance drug dissolution and to stabilize the amorphous form of a drug. The purpose of this review is to highlight emerging alternative methods to amorphous polymer dispersions for stabilizing the amorphous form of drugs. First, an overview of the properties and stabilization mechanisms of amorphous forms is provided. Subsequently, formulation approaches such as the preparation of co-amorphous small-molecule mixtures and the use of mesoporous silicon and silica-based carriers are presented as potential means to increase the stability of amorphous pharmaceuticals. Copyright © 2012 Elsevier B.V. All rights reserved.

Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

International Nuclear Information System (INIS)

Taweesup, Kattareeya; Yamamoto, Ippei; Chikyow, Toyohiro; Lothongkum, Gobboon; Tsukagoshi, Kazutoshi; Ohishi, Tomoji; Tungasmita, Sukkaneste; Visuttipitukul, Patama; Ito, Kazuhiro; Takahashi, Makoto; Nabatame, Toshihide

2016-01-01

Ruthenium doped indium oxide (In_1_−_xRu_xO_y) films fabricated using DC magnetron co-sputtering with In_2O_3 and Ru targets were investigated for use as transparent conductive oxides. The In_1_−_xRu_xO_y films had an amorphous structure in the wide compositional range of x = 0.3–0.8 and had an extremely smooth surface. The transmittance and resistivity of the In_1_−_xRu_xO_y films increased as the Ru content increased. The transmittance of the In_0_._3_8Ru_0_._6_2O_y film improved to over 80% when the film thickness was less than 5 nm, while the specific resistivity (ρ) was kept to a low value of 1.6 × 10"−"4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In_0_._9Sn_0_._1O_y, ITO) (150 nm)/ultrathin In_0_._3_8Ru_0_._6_2O_y (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10"−"5 Ω cm. This ITO/In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate for use as an anode for organic electroluminescent devices. - Highlights: • We investigated characteristics of thick ITO/ultrathin Ru doped In_2O_3 bilayers. • Effect of Ru addition in In_2O_3 results in smooth surface because of an amorphous structure. • The In_0_._3_8Ru_0_._6_2O_y film with less than 5 nm improves to high transmittance over 80%. • ITO/In_0_._3_8Ru_0_._6_2O_y bilayer has a high effective work function of 5.3 eV. • We conclude that ITO/ultrathin In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate as an anode of OEL.

Study on dinamic behavior and least burying depth of underground protective pipe

Energy Technology Data Exchange (ETDEWEB)

Kataoka, Tetsuyuki; Kokusyo, Goji; Tanaka, Yukihisa; Kobayashi, Seiichi

1988-03-30

Effect of unit load per travel wheel on the protective pipe was studied when electricity cable distribution lines were buried in the depth less than the present standard for electric equipment, and logical burying depth was investigated. Test items were material test of the protective pipe, indoor load test, and field test at loamy ground. Impact resistance hard PVC pipe was used as the protective pipe, and its strength and elastic modulus were measured. Along with these tests, it was confirmed that there was no problem of cracking by repeated flattening or breakage by fatigue. By indoor test, it was observed that, in case of shallow burying, creap deformation was small, stress concentrate occured at the middle of axial direction, and that flattening ratio was seriously affected by the method of backfilling. Field test was conducted by applying the static load of a 20 ton dump truck, and the deformation, stress, and subsidence of the protective pipe, were measured. As the conclusion of those experiments, it was found that burying of protective pipe in the depth of not less than 30 cm is allowable, as long as sufficient bakfilling is made. (14 figs, 3 tabs, 3 refs)

Role and development of soil parameters for seismic responses of buried lifelines

Energy Technology Data Exchange (ETDEWEB)

Wang, L.R.L.

1983-01-01

Buried lifelines, e.g. oil, gas, water and sewer pipelines have been damaged heavily in recent earthquakes such as 1971 San Fernando Earthquake, in U.S.A., 1976 Tangshan Earthquake, in China, and 1978 MiyagiKen-Oki Earthquake, in Japan, among others. Researchers on the seismic performance of these buried lifelines have been initiated in the United States and many other countries. Various analytical models have been proposed. However, only limited experimental investigations are available. The sources of earthquake damage to buried lifelines include landslide, tectonic uplift-subsidence, soil liquefaction, fault displacement and ground shaking (effects of wave propagation). This paper is concerned with the behavior of buried lifeline systems subjected to surface faulting and ground shaking. The role and development of soil parameters that significantly influence the seismic responses are discussed. The scope of this paper is to examine analytically the influence of various soil and soilstructure interaction parameters to the seismic responses of buried pipelines, to report the currently available physical data of these and related parameters for immediate applications, and to describe the experiments to obtain additional information on soil resistant characteristics to longitudinal pipe motions.

Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

International Nuclear Information System (INIS)

Zawadzki, Wlodek; Raymond, Andre; Kubisa, Maciej

2016-01-01

We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional (2D) electron gas (2DEG) in GaAs quantum wells (QWS), and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors. Three subjects related to the acceptor-doped heterostructures are considered. First is the problem of bound states of conduction electrons confined to the vicinity of negatively charged acceptors by the joint effect of a QW and an external magnetic field parallel to the growth direction. A variational theory of such states is presented, demonstrating that an electron turning around a repulsive center has discrete energies above the corresponding Landau levels. Experimental evidence for the discrete electron energies comes from the work on interband photo-magneto-luminescence, intraband cyclotron resonance and quantum magneto-transport (the Quantum Hall and Shubnikov–de Haas effects). An electron rain-down effect at weak electric fields and a boil-off effect at strong electric fields are introduced. It is demonstrated, both theoretically and experimentally, that a negatively charged acceptor can localize more than one electron. The second subject describes experiment and theory of asymmetric quantized Hall and Shubnikov–de Haas plateaus in acceptor-doped GaAs/GaAlAs heterostructures. It is shown that the main features of the plateau asymmetry can be attributed to asymmetric density of Landau states in the presence of acceptors. However, at high magnetic fields, the rain-down effect is also at work. The third subject deals with the so-called disorder modes (DMs) in the cyclotron resonance of conduction electrons. The DMs originate from random distributions of

Optical properties of amorphous Ba0.7Sr0.3TiO3 thin films obtained by metal organic decomposition technique

Science.gov (United States)

Qiu, Fei; Xu, Zhimou

2009-08-01

In this study, the amorphous Ba0.7Sr0.3TiO3 (BST0.7) thin films were grown onto fused quartz and silicon substrates at low temperature by using a metal organic decomposition (MOD)-spin-coating procedure. The optical transmittance spectrum of amorphous BST0.7 thin films on fused quartz substrates has been recorded in the wavelength range 190~900 nm. The films were highly transparent for wavelengths longer than 330 nm; the transmission drops rapidly at 330 nm, and the cutoff wavelength occurs at about 260 nm. In addition, we also report the amorphous BST0.7 thin film groove-buried type waveguides with 90° bent structure fabricated on Si substrates with 1.65 μm thick SiO2 thermal oxide layer. The design, fabrication and optical losses of amorphous BST0.7 optical waveguides were presented. The amorphous BST0.7 thin films were grown onto the SiO2/Si substrates by using a metal organic decomposition (MOD)-spin-coating procedure. The optical propagation losses were about 12.8 and 9.4 dB/cm respectively for the 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. The 90° bent structures with a small curvature of micrometers were designed on the basis of a double corner mirror structure. The bend losses were about 1.2 and 0.9 dB respectively for 5 and 10 μm wide waveguides at the wavelength of 632.8 nm. It is expected for amorphous BST0.7 thin films to be used not only in the passive optical interconnection in monolithic OEICs but also in active waveguide devices on the Si chip.

Thermoluminescence characteristics of Cu2O doped Calcium Lithium borate glass irradiated with the cobalt-60 gamma rays

International Nuclear Information System (INIS)

Rammadhan, Ismail; Taha, Saddon; Wagiran, H.

2017-01-01

The aim of this study is to prepare and investigate the thermoluminescence characteristics for the un-doped and Cu 2 O doped calcium lithium borate glass upon adding various Cu 2 O concentrations of 0.005% to 0.1 mol%. The glasses were prepared by melt quenching method and irradiated with 60 CO gamma-ray having different doses in the range of (0.5–4) Gy, (5–10) Gy, and (20–100) Gy. The amorphous phases were identified for optimization glass samples, effect of heating rate, glowing curves, linearity, sensitivity, fading, reproducibility of response and minimum detectable dose are also studied. The TL sample with 0.02 mol% Cu 2 O concentration has higher response compared to the other samples concentration for a delivered dose of 50 Gy, The recorded glow curves consist a dominant peak at 187 °C for a heating rate of 5 °C s −1 . However, the value of effective atomic number Z eff is 8.84 for 0.02Cu 2 O doped which are near to the atomic number of soft tissue. - Highlights: •We have prepared and investigate the crystalline structure for the un-doped and Cu 2 O doped calcium lithium borate glass are carried out. •Investigate the amorphous structure of calcium lithium borate glass. •Determine the best setting of annealing temperature, annealing time and heating rate for Cu 2 O doped calcium lithium borate glass. •The doping effects of Cu 2 O on the thermoluminescence properties of calcium lithium borate glass subjected gamma radiations. •The new dosimeter showed simple glow curve with single prominent peak centred at 187 °C and linear dose–response range 0.5–100 Gy, good reproducibility, the fading of the signal is relatively slow. •Effective atomic number for Cu 2 O doped Calcium lithium borate close to the effective atomic number of soft tissue.

The surgical correction of buried penis: a new technique

NARCIS (Netherlands)

Boemers, T. M.; de Jong, T. P.

1995-01-01

We report a new surgical technique for the correction of buried penis. The study comprised 10 boys with buried penis. The technique consisted of resection of abnormal dartos attachments, unfurling of the prepuce and correction of the deficient shaft skin by reapproximation of the preputial skin

Preparation of N-Doped Composite Shell Encapsulated Iron Nanoparticles and Their Magnetic, Adsorptive, and Photocatalytic Properties

Directory of Open Access Journals (Sweden)

Caijing Shi

2017-01-01

Full Text Available The N-doped composite shell encapsulated iron nanoparticles (CSEINPs were prepared by DC arc discharge under nitrogen at 800°C, using the anode with high Fe content and good homogeneity. The morphology, microstructure, composition, and some properties of the N-doped CSEINPs were characterized by various characterization techniques. The results revealed that the shells of the N-doped CSEINPs were composed of homogeneously amorphous structure containing C, Fe, O, and N elements; the saturation magnetization (Ms and coercivity (Hc of them at room temperature were 130 emu/g and 194 Oe, respectively. Due to the surface structure and the electrostatic interaction, the N-doped CSEINPs are employed to remove methylene blue (MB from the waste solution, and they exhibited high adsorption properties and photocatalytic activity under irradiation of visible light (IVL. The kinetics of adsorption of MB on the N-doped CSEINPs was investigated and the recycling test was carried out. The formation mechanism of the N-doped CSEINPs is discussed briefly.

Modelling the buried human body environment in upland climes using three contrasting field sites.

Science.gov (United States)

Wilson, Andrew S; Janaway, Robert C; Holland, Andrew D; Dodson, Hilary I; Baran, Eve; Pollard, A Mark; Tobin, Desmond J

2007-06-14

Despite an increasing literature on the decomposition of human remains, whether buried or exposed, it is important to recognise the role of specific microenvironments which can either trigger or delay the rate of decomposition. Recent casework in Northern England involving buried and partially buried human remains has demonstrated a need for a more detailed understanding of the effect of contrasting site conditions on cadaver decomposition and on the microenvironment created within the grave itself. Pigs (Sus scrofa) were used as body analogues in three inter-related taphonomy experiments to examine differential decomposition of buried human remains. They were buried at three contrasting field sites (pasture, moorland, and deciduous woodland) within a 15 km radius of the University of Bradford, West Yorkshire, UK. Changes to the buried body and the effect of these changes on hair and associated death-scene textile materials were monitored as was the microenvironment of the grave. At recovery, 6, 12 and 24 months post-burial, the extent of soft tissue decomposition was recorded and samples of fat and soil were collected for gas chromatography mass spectrometry (GCMS) analysis. The results of these studies demonstrated that (1) soil conditions at these three burial sites has a marked effect on the condition of the buried body but even within a single site variation can occur; (2) the process of soft tissue decomposition modifies the localised burial microenvironment in terms of microbiological load, pH, moisture and changes in redox status. These observations have widespread application for the investigation of clandestine burial and time since deposition, and in understanding changes within the burial microenvironment that may impact on biomaterials such as hair and other associated death scene materials.

DOE complex buried waste characterization assessment

International Nuclear Information System (INIS)

Kaae, P.S.; Holter, G.M.; Garrett, S.M.K.

1993-01-01

The work described in this report was conducted by Pacific Northwest Laboratory to provide information to the Buried Waste Integrated Demonstration (BWID) program. The information in this report is intended to provide a complex-wide planning base for th.e BWID to ensure that BWID activities are appropriately focused to address the range of remediation problems existing across the US Department of Energy (DOE) complex. This report contains information characterizing the 2.1 million m 3 of buried and stored wastes and their associated sites at six major DOE facilities. Approximately 85% of this waste is low-level waste, with about 12% TRU or TRU mixed waste; the remaining 3% is low-level mixed waste. In addition, the report describes soil contamination sites across the complex. Some of the details that would be useful in further characterizing the buried wastes and contaminated soil sites across the DOE complex are either unavailable or difficult to locate. Several options for accessing this information and/or improving the information that is available are identified in the report. This document is a companion to Technology Needs for Remediation: Hanford and Other DOE Sites, PNL-8328 (Stapp 1993)

Preparation and optical properties of Eu3+-doped tin oxide nanoparticles

International Nuclear Information System (INIS)

Wang, Guofeng; Yang, Yiping; Mu, Qiuying; Wang, Yude

2010-01-01

Eu 3+ -doped SnO 2 nanoparticles with high surface area were generated within the template of the cationic surfactant (cetyltrimethylammonium bromide, CTAB) micelle assembly by surfactant-mediated method from the hydrous tin chloride (SnCl 4 .5H 2 O) and europium chloride (EuCl 3 .6H 2 O). The as-synthesized product was amorphous and transformed into crystalline calcined at 500 o C for 2 h. DSC-TGA, X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) were used to examine the morphology and microstructure of the final products. The results showed that the Eu 3+ -doped SnO 2 nanoparticles with diameter of 3-7 nm were obtained. The influences of the molar ratios of Eu 3+ and CTAB on the room temperature photoluminescence (RTPL) properties of Eu 3+ -doped SnO 2 nanoparticles were investigated. The results showed that the contents of Eu 3+ and CTAB had a great influence on the crystallite sizes and RTPL properties of Eu 3+ :SnO 2 nanoparticles. The maximum of the RTPL intensity can be observed at the molar ratio 5.0% Eu 3+ and 10.0% CTAB.

Selective Oxidation Using Flame Aerosol Synthesized Iron and Vanadium-Doped Nano-TiO2

Directory of Open Access Journals (Sweden)

Zhong-Min Wang

2011-01-01

Full Text Available Selective photocatalytic oxidation of 1-phenyl ethanol to acetophenone using titanium dioxide (TiO2 raw and doped with Fe or V, prepared by flame aerosol deposition method, was investigated. The effects of metal doping on crystal phase and morphology of the synthesized nanostructured TiO2 were analyzed using XRD, TEM, Raman spectroscopy, and BET nitrogen adsorbed surface area measurement. The increase in the concentration of V and Fe reduced the crystalline structure and the anatase-to-rutile ratios of the synthesized TiO2. Synthesized TiO2 became fine amorphous powder as the Fe and V concentrations were increased to 3 and 5%, respectively. Doping V and Fe to TiO2 synthesized by the flame aerosol increased photocatalytic activity by 6 folds and 2.5 folds, respectively, compared to that of pure TiO2. It was found that an optimal doping concentration for Fe and V were 0.5% and 3%, respectively. The type and concentration of the metal dopants and the method used to add the dopant to the TiO2 are critical parameters for enhancing the activity of the resulting photocatalyst. The effects of solvents on the photocatalytic reaction were also investigated by using both water and acetonitrile as the reaction medium.

A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

Science.gov (United States)

Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

2015-09-01

In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

Oxygen dynamics around buried lesser sandeels Ammodytes tobianus (Linnaeus 1785): mode of ventilation and oxygen requirements

DEFF Research Database (Denmark)

Behrens, Jane W; Stahl, Henrik J; Steffensen, John F

2007-01-01

The oxygen environment around buried sandeels (Ammodytes tobianus) was monitored by planar optodes. The oxygen penetration depth at the sediment interface was only a few mm. Thus fish, typically buried at 1-4 cm depth, were generally in anoxic sediment. However, they induced an advective transport...... down along the body, referred to as ;plume ventilation'. Yet, within approximately 30 min the oxic plume was replenished by oxygen-depleted water from the gills. The potential for cutaneous respiration by the buried fish was thus of no quantitative importance. Calculations derived by three independent...... methods (each with N=3) revealed that the oxygen uptake of sandeel buried for 6-7 h was 40-50% of previous estimates on resting respirometry of non-buried fish, indicating lower O(2) requirements during burial on a diurnal timescale. Buried fish exposed to decreasing oxygen tensions gradually approached...

Recent advances in co-amorphous drug formulations

DEFF Research Database (Denmark)

Dengale, Swapnil Jayant; Grohganz, Holger; Rades, Thomas

2016-01-01

with other amorphous stabilization techniques. Because of this, several research groups started to investigate the co-amorphous formulation approach, resulting in an increasing amount of scientific publications over the last few years. This study provides an overview of the co-amorphous field and its recent......Co-amorphous drug delivery systems have recently gained considerable interest in the pharmaceutical field because of their potential to improve oral bioavailability of poorly water-soluble drugs through drug dissolution enhancement as a result of the amorphous nature of the material. A co...... findings. In particular, we investigate co-amorphous formulations from the viewpoint of solid dispersions, describe their formation and mechanism of stabilization, study their impact on dissolution and in vivo performance and briefly outline the future potentials....

Performance of buried pipe installation.

Science.gov (United States)

2010-05-01

The purpose of this study is to determine the effects of geometric and mechanical parameters : characterizing the soil structure interaction developed in a buried pipe installation located under : roads/highways. The drainage pipes or culverts instal...

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Sahraoui

2015-04-09

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

KAUST Repository

Chaieb, Saharoui; Mughal, Asad Jahangir

2015-01-01

Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

Metal-doped sodium aluminium hydrides as potential new hydrogen storage materials

Energy Technology Data Exchange (ETDEWEB)

Bogdanovic, B. [Max-Planck-Institut fuer Kohlenforschung, Muelheim an der Ruhr (Germany); Brand, R.A. [Department of Physics, Gerhard-Mercator-Universitaet GH Duisburg, D-47048, Duisburg (Germany); Marjanovic, A.; Schwickardi, M.; Toelle, J. [Max-Planck-Institut fuer Kohlenforschung, Kaiser-Wilhelm-Platz 1, D-45470, Muelheim an der Ruhr (Germany)

2000-04-28

Thermodynamics and kinetics of the reversible dissociation of metal-doped NaAlH{sub 4} as a hydrogen (or heat) storage system have been investigated in some detail. The experimentally determined enthalpies for the first (3.7 wt% of H) and the second dissociation step of Ti-doped NaAlH{sub 4} (3.0 wt% H) of 37 and 47 kJ/mol are in accordance with low and medium temperature reversible metal hydride systems, respectively. Through variation of NaAlH{sub 4} particle sizes, catalysts (dopants) and doping procedures, kinetics as well as the cyclization stability within cycle tests have been substantially improved with respect to the previous status [B. Bogdanovic, M. Schwickardi (1997)]. In particular, using combinations of Ti and Fe compounds as dopants, a cooperative (synergistic) catalytic effect of the metals Ti and Fe in enhancing rates of both de- and rehydrogenation of Ti/Fe-doped NaAlH{sub 4} within cycle tests, reaching a constant storage capacity of {proportional_to}4 wt% H{sub 2}, has been demonstrated. By means of {sup 57}Fe Moessbauer spectroscopy of the Ti/Fe-doped NaAlH{sub 4} before and throughout a cycle test, it has been ascertained that (1) during the doping procedure, nanosize metallic Fe particles are formed from the doping agent Fe(OEt){sub 2} and (2) already after the first dehydrogenation, the nanosize Fe particles with NaAlH{sub 4} present are probably transformed into an Fe-Al-alloy which throughout the cycle test remains practically unchanged. (orig.)

Crystalline to amorphous transformation in silicon

International Nuclear Information System (INIS)

Cheruvu, S.M.

1982-09-01

In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects

Thickness, Doping Accuracy, and Roughness Control in Graded Germanium Doped Ch{sub x} Micro-shells for Lmj

Energy Technology Data Exchange (ETDEWEB)

Legay, G.; Theobald, M.; Barnouin, J.; Peche, E.; Bednarczyk, S.; Hermerel, C. [CEA Valduc, Dept Rech Mat Nucl, Serv Microcibles, 21 - Is-sur-Tille (France)

2009-05-15

In the Commissariat a l'Energie Atomique Laser Megajoule (LMJ) facility, amorphous hydrogenated carbon (a-C: H or CH{sub x}) is the nominal ablator used to achieve inertial confinement fusion experiments. These targets are filled with of fusible mixture of deuterium-tritium in order to perform ignition. The a-C: H shell is deposited on a poly-alpha-methylstyrene (PAMS) mandrel by glow discharge polymerization with trans-2-butene, hydrogen, and helium. Graded germanium doped CH{sub x} micro-shells are supposed to be more stable regarding hydrodynamic instabilities. The shells are composed of four layers for a total thickness of 180 {mu}m. The germanium gradient is obtained by doping the different a-C: H layers with the addition of tetra-methylgermanium in the gas mixture. As the achievement of ignition greatly depends on the physical properties of the shell, the thicknesses, doping concentration, and roughness must be precisely controlled. Quartz microbalances were used to perform an in situ and real-time measurement of the thickness in order to reduce the variations and so our fabrication tolerances on each layer thickness. Ex situ control of the thickness of each layer was carried out, with both optical coherent tomography and interferometry, (wall-mapper). High-quality, PAMS and a rolling system have been used to lower the low-mode roughness [root-mean-square (rms) (mode 2) {<=} 70 nm]. High modes were clearly, reduced by, coating the pan containing the shells with polyvinyl alcohol + CH{sub x} instead of polystyrene + CH{sub x} resulting in an rms ({>=}mode 10) {<=} 20 nm, which can be {<=}15 nm for the best micro-shells. The germanium concentration (0. 4 and 0. 75 at. %) in the a-CH layer is obtained by regulating the tetramethyl-germanium flow. Low range mass flow controllers have been used to improve the doping accuracy. (authors)

Boron profiles in doped amorphous-silicon solar cells formed by plasma ion deposition

International Nuclear Information System (INIS)

Stoddart, C.T.H.; Hunt, C.P.; Coleman, J.H.

1979-01-01

Amorphous silicon p-n junction solar cells of large area (100 cm 2 ) and having a quantum efficiency approaching 100% in the blue region have been prepared by plasma ion-plating, the p layer being formed from diborane and silane gases in a cathode glow-discharge. Surface secondary ion mass spectrometry combined with ion beam etching was found to be a very sensitive method with high in-depth resolution for obtaining the initial boron-silicon profile of the solar cell p-n junction. (author)

Permanent burying method for product

International Nuclear Information System (INIS)

Sakai, Goro; Sakata, Noboru; Hironaka, Yoshikazu; Shigematsu, Kazuo; Yurugi, Masahiro; Minami, Masayoshi; Yoshisaki, Masato.

1995-01-01

In a method of permanently burying an object by filling and solidifying a cement mortar in gaps between each of objects to be buried underground, cement mortar is filled into gaps, which comprises water at a unit amount determined as from 200 to 250kg/m 3 , a cement at low water/cement ratio (%) of from 70 to 400%, and contains fine powder having an average grain size of not greater than 100μm (not containing cement) of 50 to 800kg/m 3 , fine aggregates of 800 to 1200kg/m 3 , UERAN gum (a bio-gum powder produced by aerobic fermentation of alcaligenes-bacteria) of 20g/m 3 to 1.3kg/m 3 , a dispersing agent of 0 to 40kg/m 3 , a swelling agent of 0 to 40kg/m 3 . Then if the mortar blended with the UERAN gum is injected, any gaps can be filled tightly, no breeding is caused and since the amount of cement is small, it does not suffer from temperature cracking. Therefore, the state of filling is kept permanently, and environmental pollution caused by radioactive wastes can be prevented. (N.H.)

Inspection device for buried equipment

International Nuclear Information System (INIS)

Hanawa, Jun.

1994-01-01

In an inspection device for a buried equipment, a rail is suspended at the upper portion of a vessel of a pit-vessel type pump buried in a plant building floor, and a truck movable vertical in the vessel along the rail, and an ultrasonic wave probe contained in the truck and urged to the vessel by an electromagnet are disposed. In addition, an elevator moving vertically along a shaft is disposed, and an arm having the ultrasonic probe disposed at the end portion and driven by a piston are disposed to the elevator. The ultrasonic wave probe moves vertically together with the truck along the rail in the vessel while being urged to the vessel by the electromagnet to inspect and measure the state at the inner and outer surfaces of the vessel. Further, the length of the arm is controlled so as to set a predetermined distance between the ultrasonic wave probe and the vessel. Subsequently, the elevator is moved vertically along a shaft passing through a shaft hole of a mount, and the shaft is rotated thereby enabling to inspect and measure the state of the inner and outer surfaces of the vessel. (N.H.)

Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells.

Science.gov (United States)

Yu, Linwei; Fortuna, Franck; O'Donnell, Benedict; Jeon, Taewoo; Foldyna, Martin; Picardi, Gennaro; Roca i Cabarrocas, Pere

2012-08-08

Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells.

Neutron irradiation induced amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Hay, J.C.

1998-01-01

This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

Salt Fog Testing Iron-Based Amorphous Alloys

International Nuclear Information System (INIS)

Rebak, Raul B.; Aprigliano, Louis F.; Day, S. Daniel; Farmer, Joseph C.

2007-01-01

Iron-based amorphous alloys are hard and highly corrosion resistant, which make them desirable for salt water and other applications. These alloys can be produced as powder and can be deposited as coatings on any surface that needs to be protected from the environment. It was of interest to examine the behavior of these amorphous alloys in the standard salt-fog testing ASTM B 117. Three different amorphous coating compositions were deposited on 316L SS coupons and exposed for many cycles of the salt fog test. Other common engineering alloys such as 1018 carbon steel, 316L SS and Hastelloy C-22 were also tested together with the amorphous coatings. Results show that amorphous coatings are resistant to rusting in salt fog. Partial devitrification may be responsible for isolated rust spots in one of the coatings. (authors)

Identification of buried victims in natural disaster with GPR method

Science.gov (United States)

Dewi, Rianty Kusuma; Kurniawan, Adityo; Taqwantara, Reyhan Fariz; Iskandar, Farras M.; Naufal, Taufiq Ziyan; Widodo

2017-07-01

Indonesian is one of the most seismically active regions in the world and has very complicated plate convergence because there is meeting point of several tectonic plates. The complexity of tectonic features causes a lot of natural disasters such as landslides, tsunamis, earth quakes, volcanoes eruption, etc. Sometimes, the disasters occurs in high populated area and causing thousands to millions of victim been buried under the rumble. Unfortunately, the evacuation still uses the conventional method such using rescue dogs whereas the sensitivity of smell is decrease when the victims buried under the level of the ground. The purpose of this study is to detect buried bodies using GPR method, so it can enhance the effectiveness and the efficiency in looking for the disaster victims. GPR method is used because it can investigate things under the ground. A detailed GPR research has been done in Cikutra Graveyard, Bandung, with corpse buried two week until two years before the research. The radar profiles from this research showed amplitude contras anomaly between the new corpse and the old ones. We obtained the amplitude contras at 1.2-1.4 meters under the surface. This method proved to be effective but still need more attention on undulated surface and non-soil areas.

Micromachining of buried micro channels in silicon

NARCIS (Netherlands)

de Boer, Meint J.; Tjerkstra, R.W.; Berenschot, Johan W.; Jansen, Henricus V.; Burger, G.J.; Burger, G.J.; Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt; van den Berg, Albert

A new method for the fabrication of micro structures for fluidic applications, such as channels, cavities, and connector holes in the bulk of silicon wafers, called buried channel technology (BCT), is presented in this paper. The micro structures are constructed by trench etching, coating of the

Ion-beam induced structure modifications in amorphous germanium

International Nuclear Information System (INIS)

Steinbach, Tobias

2012-01-01

Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy ε n deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 μm thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of ε e HRF =(10.5±1.0) kev nm -1 was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation ε e S a =(12±2) keV nm -1 for the first time extracted for a Ge the characteristic linear behaviour of the

Nanosized Thin SnO2 Layers Doped with Te and TeO2 as Room Temperature Humidity Sensors

Directory of Open Access Journals (Sweden)

Biliana Georgieva

2014-05-01

Full Text Available In this paper the humidity sensing properties of layers prepared by a new method for obtaining doped tin oxide are studied. Different techniques—SEM, EDS in SEM, TEM, SAED, AES and electrical measurements—are used for detailed characterization of the thin layers. The as-deposited layers are amorphous with great specific area and low density. They are built up of a fine grained matrix, consisting of Sn- and Te-oxides, and a nanosized dispersed phase of Te, Sn and/or SnTe. The chemical composition of both the matrix and the nanosized particles depends on the ratio RSn/Te and the evaporation conditions. It is shown that as-deposited layers with RSn/Te ranging from 0.4 to 0.9 exhibit excellent characteristics as humidity sensors operating at room temperature—very high sensitivity, good selectivity, fast response and short recovery period. Ageing tests have shown that the layers possess good long-term stability. Results obtained regarding the type of the water adsorption on the layers’ surface help better understand the relation between preparation conditions, structure, composition and humidity sensing properties.

Interdispersed amorphous MnO{sub x}-carbon nanocomposites with superior electrochemical performance as lithium-storage material

Energy Technology Data Exchange (ETDEWEB)

Guo, Juchen; Wang, Chunsheng [Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD (United States); Liu, Qing; Zachariah, Michael R. [Department of Chemistry and Biochemistry, University of Maryland, College Park, MD (United States)

2012-02-22

The realization of manganese oxide anode materials for lithium-ion batteries is hindered by inferior cycle stability, rate capability, and high overpotential induced by the agglomeration of manganese metal grains, low conductivity of manganese oxide, and the high stress/strain in the crystalline manganese oxide structure during the repeated lithiation/delithiation process. To overcome these challenges, unique amorphous MnO{sub x}-C nanocomposite particles with interdispersed carbon are synthesized using aerosol spray pyrolysis. The carbon filled in the pores of amorphous MnO{sub x} blocks the penetration of liquid electrolyte to the inside of MnO{sub x}, thus reducing the formation of a solid electrolyte interphase and lowering the irreversible capacity. The high electronic and lithium-ion conductivity of carbon also enhances the rate capability. Moreover, the interdispersed carbon functions as a barrier structure to prevent manganese grain agglomeration. The amorphous structure of MnO{sub x} brings additional benefits by reducing the stress/strain of the conversion reaction, thus lowering lithiation/delithiation overpotential. As the result, the amorphous MnO{sub x}-C particles demonstrated the best performance as an anode material for lithium-ion batteries to date. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Thermoluminescence characteristics of Cu{sub 2}O doped Calcium Lithium borate glass irradiated with the cobalt-60 gamma rays

Energy Technology Data Exchange (ETDEWEB)

Rammadhan, Ismail, E-mail: ismail.rammadhan@koyauniversity.org [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Department of Physics, Faculty of Sciences and Health, Koya University, Danielle Mitterrand Boulevard, Koya 45, Kurdistan Region (Iraq); Taha, Saddon [Department of Physics, Faculty of Sciences and Health, Koya University, Danielle Mitterrand Boulevard, Koya 45, Kurdistan Region (Iraq); Wagiran, H. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)

2017-06-15

The aim of this study is to prepare and investigate the thermoluminescence characteristics for the un-doped and Cu{sub 2}O doped calcium lithium borate glass upon adding various Cu{sub 2}O concentrations of 0.005% to 0.1 mol%. The glasses were prepared by melt quenching method and irradiated with {sup 60}CO gamma-ray having different doses in the range of (0.5–4) Gy, (5–10) Gy, and (20–100) Gy. The amorphous phases were identified for optimization glass samples, effect of heating rate, glowing curves, linearity, sensitivity, fading, reproducibility of response and minimum detectable dose are also studied. The TL sample with 0.02 mol% Cu{sub 2}O concentration has higher response compared to the other samples concentration for a delivered dose of 50 Gy, The recorded glow curves consist a dominant peak at 187 °C for a heating rate of 5 °C s{sup −1}. However, the value of effective atomic number Z{sub eff} is 8.84 for 0.02Cu{sub 2}O doped which are near to the atomic number of soft tissue. - Highlights: •We have prepared and investigate the crystalline structure for the un-doped and Cu{sub 2}O doped calcium lithium borate glass are carried out. •Investigate the amorphous structure of calcium lithium borate glass. •Determine the best setting of annealing temperature, annealing time and heating rate for Cu{sub 2}O doped calcium lithium borate glass. •The doping effects of Cu{sub 2}O on the thermoluminescence properties of calcium lithium borate glass subjected gamma radiations. •The new dosimeter showed simple glow curve with single prominent peak centred at 187 °C and linear dose–response range 0.5–100 Gy, good reproducibility, the fading of the signal is relatively slow. •Effective atomic number for Cu{sub 2}O doped Calcium lithium borate close to the effective atomic number of soft tissue.

Thermoluminescence Response of Copper-Doped Potassium Borate Glass Subjected to 6 Megavolt X-Ray Irradiation

Science.gov (United States)

Hossain, I.; Shekaili, N. K.; Wagiran, H.

2015-03-01

This study addresses the characteristics of Cu-doped and undoped potassium borate glass for use as ionizing radiation dosimeters by investigating and comparing the thermoluminescence responses, linearity, sensitivity and dose response s of the two types of glasses. A number of samples based on xK 2 CO 3 + (100 - x)H 3 BO 3 , where 10 ≤ x ≤ 30 mol.%, have been prepared using a melt quenching technique. The amorphous phases were identified using X-ray diffraction (XRD). The undoped potassium borate samples 20K 2 CO 3 + 80H 3 BO 3 (mol.%) and Cu-doped (0.5 mol.%) samples were placed in a solid phantom apparatus and irradiated with in X-ray tube under 6 MV accelerating voltage with doses ranging from 0.5 to 4.0 Gy. This beam was produced by the Primus MLC 3339 linear accelerator (LINAC) available at Hospital Sultan Ismail, Johor Bahru, Malaysia. The results clearly show the superiority of Cu-doped glass in terms of response and sensitivity to producing luminescence over undoped potassium borate glass. The sensitivity of Cu-doped glass is 6.75 times greater than that of undoped glass.

Optical properties of silver doped amorphous films of composition Ge28S72 and Ge22Ga6S72

Czech Academy of Sciences Publication Activity Database

Bartoš, M.; Wágner, T.; Válková, S.; Pavlišta, M.; Vlček, Milan; Beneš, L.; Frumar, M.

2011-01-01

Roč. 13, 11-12 (2011), 1442-1446 ISSN 1454-4164. [Fifth International Conference on Amorphous and Nanostructured Chalcogenides. Magurele - Bucharest, 26.06.2011-01.07.2011] Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous films * chalcogenides * optical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 0.457, year: 2011 http://joam.inoe.ro/index.php?option=magazine&op=view&idu=2941&catid=68

Enhancement of tributyltin degradation under natural light by N-doped TiO{sub 2} photocatalyst

Energy Technology Data Exchange (ETDEWEB)

Bangkedphol, S., E-mail: sornnarin.bangkedphol@strath.ac.uk [David Livingstone Centre for Sustainability, Department of Civil Engineering, University of Strathclyde, Glasgow, Scotland G1 1XN (United Kingdom); Keenan, H.E. [David Livingstone Centre for Sustainability, Department of Civil Engineering, University of Strathclyde, Glasgow, Scotland G1 1XN (United Kingdom); Davidson, C.M. [WestCHEM, Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow, Scotland G1 1XL (United Kingdom); Sakultantimetha, A. [David Livingstone Centre for Sustainability, Department of Civil Engineering, University of Strathclyde, Glasgow, Scotland G1 1XN (United Kingdom); Sirisaksoontorn, W.; Songsasen, A. [Department of Chemistry and Centre for Innovation in chemistry, Faculty of Science, Kasetsart University, Bangkok 10900 (Thailand)

2010-12-15

Photo-degradation of tributyltin (TBT) has been enhanced by TiO{sub 2} nanoparticles doped with nitrogen (N-doped TiO{sub 2}). The N-doped catalyst was prepared by a sol-gel reaction of titanium (IV) tetraisopropoxide with 25% ammonia solution and calcined at various temperatures from 300 to 600 deg. C. X-ray diffraction results showed that N-doped TiO{sub 2} remained amorphous at 300 deg. C. At 400 deg. C the anatase phase occurred then transformed to the rutile phase at 600 deg. C. The crystallite size calculated from Scherrer's equation was in the range of 16-51 nm which depended on the calcination temperature. N-doped TiO{sub 2} calcined at 400 deg. C which contained 0.054% nitrogen, demonstrated the highest photocatalytic degradation of TBT at 28% in 3 h under natural light when compared with undoped TiO{sub 2} and commercial photocatalyst, P25-TiO{sub 2} which gave 14.8 and 18% conversion, respectively.

Facile Doping and Work-Function Modification of Few-Layer Graphene Using Molecular Oxidants and Reductants

KAUST Repository

Mansour, Ahmed; Said, Marcel M.; Dey, Sukumar; Hu, Hanlin; Zhang, Siyuan; Munir, Rahim; Zhang, Yadong; Moudgil, Karttikay; Barlow, Stephen; Marder, Seth R.; Amassian, Aram

2017-01-01

Doping of graphene is a viable route toward enhancing its electrical conductivity and modulating its work function for a wide range of technological applications. In this work, the authors demonstrate facile, solution-based, noncovalent surface doping of few-layer graphene (FLG) using a series of molecular metal-organic and organic species of varying n- and p-type doping strengths. In doing so, the authors tune the electronic, optical, and transport properties of FLG. The authors modulate the work function of graphene over a range of 2.4 eV (from 2.9 to 5.3 eV)-unprecedented for solution-based doping-via surface electron transfer. A substantial improvement of the conductivity of FLG is attributed to increasing carrier density, slightly offset by a minor reduction of mobility via Coulomb scattering. The mobility of single layer graphene has been reported to decrease significantly more via similar surface doping than FLG, which has the ability to screen buried layers. The dopant dosage influences the properties of FLG and reveals an optimal window of dopant coverage for the best transport properties, wherein dopant molecules aggregate into small and isolated clusters on the surface of FLG. This study shows how soluble molecular dopants can easily and effectively tune the work function and improve the optoelectronic properties of graphene.

Facile Doping and Work-Function Modification of Few-Layer Graphene Using Molecular Oxidants and Reductants

KAUST Repository

Mansour, Ahmed

2017-01-03

Doping of graphene is a viable route toward enhancing its electrical conductivity and modulating its work function for a wide range of technological applications. In this work, the authors demonstrate facile, solution-based, noncovalent surface doping of few-layer graphene (FLG) using a series of molecular metal-organic and organic species of varying n- and p-type doping strengths. In doing so, the authors tune the electronic, optical, and transport properties of FLG. The authors modulate the work function of graphene over a range of 2.4 eV (from 2.9 to 5.3 eV)-unprecedented for solution-based doping-via surface electron transfer. A substantial improvement of the conductivity of FLG is attributed to increasing carrier density, slightly offset by a minor reduction of mobility via Coulomb scattering. The mobility of single layer graphene has been reported to decrease significantly more via similar surface doping than FLG, which has the ability to screen buried layers. The dopant dosage influences the properties of FLG and reveals an optimal window of dopant coverage for the best transport properties, wherein dopant molecules aggregate into small and isolated clusters on the surface of FLG. This study shows how soluble molecular dopants can easily and effectively tune the work function and improve the optoelectronic properties of graphene.

Sizeable magnetic circular dichroism of artificially precipitated Co clusters in amorphous carbon

Directory of Open Access Journals (Sweden)

H. S. Hsu

2012-09-01

Full Text Available This study examines sizeable magnetic circular dichroism (MCD in Co(20%-doped amorphous carbon (a-C films. While as-grown films exhibit a non-detectable MCD signal, films that undergo rapid thermal annealing (RTA at 600°C in a vacuum yield broad MCD spectra with a large amplitude of ∼3.9 × 104 deg/cm in saturation field 0.78 T at the σ-σ* gap transition (∼5.5 eV. In such films after RTA, the metastable Co-C bonding is decomposed and suitable Co nanoparticles/a-C interfaces are thus formed. Our results indicate that the large change in MCD is contributed from Co nanoparticles and associated with the spin-dependent electronic structure at the Co/a-C interfaces.

Analyses of SRS waste glass buried in granite in Sweden and salt in the United States

International Nuclear Information System (INIS)

Williams, J.P.; Wicks, G.G.; Clark, D.E.; Lodding, A.R.

1991-01-01

Simulated Savannah River Site (SRS) waste glass forms have been buried in the granite geology of the Stirpa mine in Sweden for two years. Analyses of glass surfaces provided a measure of the performance of the waste glasses as a function of time. Similar SRS waste glass compositions have also been buried in salt at the WIPP facility in Carlsbad, New Mexico for a similar time period. Analyses of the SRS waste glasses buried in-situ in granite will be presented and compared to the performance of these same compositions buried in salt at WIPP

Aging management and life assessment of buried commodities in nuclear power plants

International Nuclear Information System (INIS)

Park, J. H.; Jung, I. S.; Jo, H. S.; Kim, M. G.; Kim, S. T.; Lee, S. S.

2000-01-01

General field survey, inspection and life assessment were performed to establish effective aging management program of buried commodities in nuclear power plant. Basic informations on material characteristics, aging degradation experiences and maintenance history were gathered. Considering their degradation effects on power operation or safety, buried commodities were screened for the aging management priority. Various inspection techniques were applied in field survey and inspection, and their results were incorporated in the life assessment of buried commodities. In the aspect of aging degradation, general status of buried commodities were considered still sound while some revealed local degradation

Amorphous boron nanorod as an anode material for lithium-ion batteries at room temperature.

Science.gov (United States)

Deng, Changjian; Lau, Miu Lun; Barkholtz, Heather M; Xu, Haiping; Parrish, Riley; Xu, Meiyue Olivia; Xu, Tao; Liu, Yuzi; Wang, Hao; Connell, Justin G; Smith, Kassiopeia A; Xiong, Hui

2017-08-03

We report an amorphous boron nanorod anode material for lithium-ion batteries prepared through smelting non-toxic boron oxide in liquid lithium. Boron in theory can provide capacity as high as 3099 mA h g -1 by alloying with Li to form B 4 Li 5 . However, experimental studies of the boron anode have been rarely reported for room temperature lithium-ion batteries. Among the reported studies the electrochemical activity and cycling performance of the bulk crystalline boron anode material are poor at room temperature. In this work, we utilized an amorphous nanostructured one-dimensional (1D) boron material aiming at improving the electrochemical reactivity between boron and lithium ions at room temperature. The amorphous boron nanorod anode exhibited, at room temperature, a reversible capacity of 170 mA h g -1 at a current rate of 10 mA g -1 between 0.01 and 2 V. The anode also demonstrated good rate capability and cycling stability. The lithium storage mechanism was investigated by both sweep voltammetry measurements and galvanostatic intermittent titration techniques (GITTs). The sweep voltammetric analysis suggested that the contributions from lithium ion diffusion into boron and the capacitive process to the overall lithium charge storage are 57% and 43%, respectively. The results from GITT indicated that the discharge capacity at higher potentials (>∼0.2 V vs. Li/Li + ) could be ascribed to a capacitive process and at lower potentials (ions and the amorphous boron nanorod. This work provides new insights into designing nanostructured boron materials for lithium-ion batteries.

Atomic friction at exposed and buried graphite step edges: Experiments and simulations

Energy Technology Data Exchange (ETDEWEB)

Ye, Zhijiang; Martini, Ashlie, E-mail: amartini@ucmerced.edu [School of Engineering, University of California Merced, 5200 N. Lake Road, Merced, California 95343 (United States)

2015-06-08

The surfaces of layered materials such as graphite exhibit step edges that affect friction. Step edges can be exposed, where the step occurs at the outmost layer, or buried, where the step is underneath another layer of material. Here, we study friction at exposed and buried step edges on graphite using an atomic force microscope (AFM) and complementary molecular dynamics simulations of the AFM tip apex. Exposed and buried steps exhibit distinct friction behavior, and the friction on either step is affected by the direction of sliding, i.e., moving up or down the step, and the bluntness of the tip. These trends are analyzing in terms of the trajectory of the AFM tip as it moves over the step, which is a convolution of the topography of the surface and the tip shape.

Atomic friction at exposed and buried graphite step edges: Experiments and simulations

International Nuclear Information System (INIS)

Ye, Zhijiang; Martini, Ashlie

2015-01-01

The surfaces of layered materials such as graphite exhibit step edges that affect friction. Step edges can be exposed, where the step occurs at the outmost layer, or buried, where the step is underneath another layer of material. Here, we study friction at exposed and buried step edges on graphite using an atomic force microscope (AFM) and complementary molecular dynamics simulations of the AFM tip apex. Exposed and buried steps exhibit distinct friction behavior, and the friction on either step is affected by the direction of sliding, i.e., moving up or down the step, and the bluntness of the tip. These trends are analyzing in terms of the trajectory of the AFM tip as it moves over the step, which is a convolution of the topography of the surface and the tip shape

Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

Energy Technology Data Exchange (ETDEWEB)

Einsele, Florian

2010-02-05

Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the

Doping assessment in GaAs nanowires

DEFF Research Database (Denmark)

Goktas, N. Isik; Fiordaliso, Elisabetta Maria; LaPierre, R. R.

2018-01-01

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs...

Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display

International Nuclear Information System (INIS)

Choi, J.H.; Kang, S.H.; Oh, H.S.; Yu, T.H.; Sohn, I.S.

2013-01-01

Indium tin oxide (ITO) thin films doped with various metal atoms were investigated in terms of phase transition behavior and electro-optical properties for the purpose of upgrading ITO and indium zinc oxide (IZO) films, commonly used for pixel electrodes in flat panel displays. We explored Ce, Mg, Zn, and Ga atoms as dopants to ITO by the co-sputtering technique, and Ga-doped ITO films (In:Sn:Ga = 87.4:6.7:5.9 at.%) showed the phase transition behavior at 210 °C within 20 min with high visible transmittance of 91% and low resistivity of 0.22 mΩ cm. The film also showed etching rate similar to amorphous ITO, and no etching residue on glass surfaces. These results were confirmed with the film formed from a single Ga-doped ITO target with slightly different compositions (In:Sn:Ga = 87:9:4 at.%). Compared to the ITO target, Ga-doped ITO target left 1/4 less nodules on the target surface after sputtering. These results suggest that Ga-doped ITO films could be an excellent alternative to ITO and IZO for pixel electrodes in thin film transistor liquid crystal display (TFT-LCD). - Highlights: ► We report Ga-doped In–Sn–O films for a pixel electrode in liquid crystal display. ► Ga-doped In–Sn–O films show phase transition behavior at 210 °C. ► Ga-doped In–Sn–O films show high wet etchability and low resistivity

In situ vitrification of buried waste: Containment issues and suppression systems

International Nuclear Information System (INIS)

Luey, J.; Powell, T.D.

1992-03-01

Pacific Northwest Laboratory (PNL) and Idaho National Engineering Laboratory (INEL) are developing a remedial action technology for buried waste through the adaptation of the in situ vitrification (ISV) process. The ISV process is a thermal treatment process originally developed for the US Department of Energy (DOE) to stabilize soils contaminated with transuranic waste. ISV tests with buried waste forms have demonstrated that the processing of buried waste is more dynamic than the processing of soils. This paper will focus on the issue of containment of the gases released during the processing of buried waste and on engineered suppression systems to alleviate transient events associated with dynamic off-gassing from the ISV melt

In situ vitrification of buried waste: Containment issues and suppression systems

International Nuclear Information System (INIS)

Luey, J.; Powell, T.D.

1992-01-01

Pacific Northwest Laboratory (PNL) and Idaho National Engineering Laboratory (INEL) are developing a remedial action technology for buried waste through the adaptation of the in situ vitrification (ISV) process. The ISV process is a thermal treatment process originally developed for the U.S. Department of Energy (DOE) to stabilize soils contaminated with transuranic waste. ISV tests with buried waste forms have demonstrated that the processing of buried waste is more dynamic than the processing of soils. This paper will focus on the issue of containment of the gases released during the processing of buried waste and on engineered suppression systems to alleviate transient events associated with dynamic off-gassing from the ISV melt. (author)

Amorphous silicon ionizing particle detectors

Science.gov (United States)

Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

1988-01-01

Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

Structure adhesion and corrosion resistance study of tungsten bisulfide doped with titanium deposited by DC magnetron co-sputtering

Energy Technology Data Exchange (ETDEWEB)

De La Roche, J. [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al aeropuerto, Campus La Nubia, Manizales (Colombia); González, J.M. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales – RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Restrepo-Parra, E., E-mail: erestrepop@unal.edu.co [Laboratorio de Física del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 vía al aeropuerto, Campus La Nubia, Manizales (Colombia); Sequeda, F. [Laboratorio de Recubrimientos Duros y Aplicaciones Industriales – RDAI, Universidad del Valle, Calle 13 N° 100-00 Ciudadela Meléndez, Cali (Colombia); Alleh, V.; Scharf, T.W. [The University of North Texas, Department of Materials Science and Engineering, Denton, TX 76203 (United States)

2014-11-30

Highlights: • Ti-doped WS{sub 2} films were grown via the magnetron co-sputtering technique. • At a high Ti percentage, the crystalline structure of WS{sub 2} coatings tends to be amorphous. • As the Ti percentage increases in WS{sub 2} coatings, nanocomposites tend to form. • Ti-doped WS{sub 2} films have elastic behavior compared with the plastic response of pure WS{sub 2} films. • A high Ti percentage increases the corrosion resistance of WS{sub 2} films. - Abstract: Titanium-doped tungsten bisulfide thin films (WS{sub 2}-Ti) were grown using a DC magnetron co-sputtering technique on AISI 304 stainless steel and silicon substrates. The films were produced by varying the Ti cathode power from 0 to 25 W. Using energy dispersive spectroscopy (EDS), the concentration of Ti in the WS{sub 2} was determined, and a maximum of 10% was obtained for the sample grown at 25 W. Moreover, the S/W ratio was calculated and determined to increase as a function of the Ti cathode power. According to transmission electron microscopy (TEM) results, at high titanium concentrations (greater than 6%), nanocomposite formation was observed, with nanocrystals of Ti embedded in an amorphous matrix of WS{sub 2}. Using the scratch test, the coatings’ adhesion was analyzed, and it was observed that as the Ti percentage was increased, the critical load (Lc) also increased. Furthermore, the failure type changed from plastic to elastic. Finally, the corrosion resistance was evaluated using the electrochemical impedance spectroscopy (EIS) technique, and it was observed that at high Ti concentrations, the corrosion resistance was improved, as Ti facilitates coating densification and generates a protective layer.

Amorphous surface layer versus transient amorphous precursor phase in bone - A case study investigated by solid-state NMR spectroscopy.

Science.gov (United States)

Von Euw, Stanislas; Ajili, Widad; Chan-Chang, Tsou-Hsi-Camille; Delices, Annette; Laurent, Guillaume; Babonneau, Florence; Nassif, Nadine; Azaïs, Thierry

2017-09-01

The presence of an amorphous surface layer that coats a crystalline core has been proposed for many biominerals, including bone mineral. In parallel, transient amorphous precursor phases have been proposed in various biomineralization processes, including bone biomineralization. Here we propose a methodology to investigate the origin of these amorphous environments taking the bone tissue as a key example. This study relies on the investigation of a bone tissue sample and its comparison with synthetic calcium phosphate samples, including a stoichiometric apatite, an amorphous calcium phosphate sample, and two different biomimetic apatites. To reveal if the amorphous environments in bone originate from an amorphous surface layer or a transient amorphous precursor phase, a combined solid-state nuclear magnetic resonance (NMR) experiment has been used. The latter consists of a double cross polarization 1 H→ 31 P→ 1 H pulse sequence followed by a 1 H magnetization exchange pulse sequence. The presence of an amorphous surface layer has been investigated through the study of the biomimetic apatites; while the presence of a transient amorphous precursor phase in the form of amorphous calcium phosphate particles has been mimicked with the help of a physical mixture of stoichiometric apatite and amorphous calcium phosphate. The NMR results show that the amorphous and the crystalline environments detected in our bone tissue sample belong to the same particle. The presence of an amorphous surface layer that coats the apatitic core of bone apatite particles has been unambiguously confirmed, and it is certain that this amorphous surface layer has strong implication on bone tissue biogenesis and regeneration. Questions still persist on the structural organization of bone and biomimetic apatites. The existing model proposes a core/shell structure, with an amorphous surface layer coating a crystalline bulk. The accuracy of this model is still debated because amorphous calcium

Colors and the evolution of amorphous galaxies

International Nuclear Information System (INIS)

Gallagher, J.S. III; Hunter, D.A.

1987-01-01

UBVRI and H-alpha photometric observations are presented for 16 amorphous galaxies and a comparison sample of Magellanic irregular (Im) and Sc spiral galaxies. These data are analyzed in terms of star-formation rates and histories in amorphous galaxies. Amorphous galaxies have mean global colors and star-formation rates per unit area that are similar to those in giant Im systems, despite differences in spatial distributions of star-forming centers in these two galactic structural classes. Amorphous galaxies differ from giant Im systems in having somewhat wider scatter in relationships between B - V and U - B colors, and between U - B and L(H-alpha)/L(B). This scatter is interpreted as resulting from rapid variations in star-formation rates during the recent past, which could be a natural consequence of the concentration of star-forming activity into centrally located, supergiant young stellar complexes in many amorphous galaxies. While the unusual spatial distribution and intensity of star formation in some amorphous galaxies is due to interactions with other galaxies, several amorphous galaxies are relatively isolated and thus the processes must be internal. The ultimate evolutionary fate of rapidly evolving amorphous galaxies remains unknown. 77 references

Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis

International Nuclear Information System (INIS)

Gokulakrishnan, V.; Parthiban, S.; Jeganathan, K.; Ramamurthi, K.

2011-01-01

Zirconium doped zinc oxide thin films with enhanced optical transparency were prepared on Corning 1737 glass substrates at the substrate temperature of 400 o C by spray pyrolysis method for various doping concentrations of zirconium (IV) chloride in the spray solution. The X-ray diffraction studies reveal that the films exhibit hexagonal crystal structure with polycrystalline grains oriented along (0 0 2) direction. The crystalline quality of the films is found to be deteriorating with the increase of doping concentration and acquires amorphous state for higher concentration of 8 at.% in precursor solution. The average transmittance for 5 at.% (solution) zirconium doped ZnO film is significantly increased to ∼92% in the visible region of 500-800 nm. The room temperature photoluminescence (PL) spectra of films show a band edge between 3.41 and 3.2 eV and strong blue emission at 2.8 eV irrespective of doping concentration and however intensity increases consistently with doping levels. The vacuum annealing at 400 o C reduced the resistivity of the films significantly due to the coalescence of grains and the lowest resistivity of 2 x 10 -3 Ω cm is observed for 3 at.% (solution) Zr doped ZnO films which envisages that it is a good candidate for stable TCO material.

Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration

Energy Technology Data Exchange (ETDEWEB)

Jiao, Guohua [Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences, Shenzhen (China); The Chinese University of Hong Kong, Shatin, Hong Kong (China); Liu, Bo [Sichuan University, Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Chengdu (China); Li, Qiran [CNRS-Universite Paris Sud UMR 8622, Institut d' Electronique Fondamentale, Orsay (France)

2015-08-15

Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/p-SiOC:H/Si, even annealing up to 500 C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 C, indicating its potential application in the advanced barrierless Cu metallization. (orig.)

Buried Man-made Structure Imaging using 2-D Resistivity Inversion

Science.gov (United States)

Anderson Bery, Andy; Nordiana, M. M.; El Hidayah Ismail, Noer; Jinmin, M.; Nur Amalina, M. K. A.

2018-04-01

This study is carried out with the objective to determine the suitable resistivity inversion method for buried man-made structure (bunker). This study was carried out with two stages. The first stage is suitable array determination using 2-D computerized modeling method. One suitable array is used for the infield resistivity survey to determine the dimension and location of the target. The 2-D resistivity inversion results showed that robust inversion method is suitable to resolve the top and bottom part of the buried bunker as target. In addition, the dimension of the buried bunker is successfully determined with height of 7 m and length of 20 m. The location of this target is located at -10 m until 10 m of the infield resistivity survey line. The 2-D resistivity inversion results obtained in this study showed that the parameters selection is important in order to give the optimum results. These parameters are array type, survey geometry and inversion method used in data processing.

Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

Science.gov (United States)

Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

2017-08-01

Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

Synthesis and electrochemical evaluation of an amorphous titanium dioxide derived from a solid state precursor

Science.gov (United States)

Joyce, Christopher D.; McIntyre, Toni; Simmons, Sade; LaDuca, Holly; Breitzer, Jonathan G.; Lopez, Carmen M.; Jansen, Andrew N.; Vaughey, J. T.

Titanium oxides are an important class of lithium-ion battery electrodes owing to their good capacity and stability within the cell environment. Although most Ti(IV) oxides are poor electronic conductors, new methods developed to synthesize nanometer scale primary particles have achieved the higher rate capability needed for modern commercial applications. In this report, the anionic water stable titanium oxalate anion [TiO(C 2O 4) 2] 2- was isolated in high yield as the insoluble DABCO (1,4-diazabicyclo[2.2.2]octane) salt. Powder X-ray diffraction studies show that the titanium dioxide material isolated after annealing in air is initially amorphous, converts to N-doped anatase above 400 °C, then to rutile above 600 °C. Electrochemical studies indicate that the amorphous titanium dioxide phase within a carbon matrix has a stable cycling capacity of ∼350 mAh g -1. On crystallizing at 400 °C to a carbon-coated anatase the capacity drops to 210 mAh g -1, and finally upon carbon burn-off to 50 mAh g -1. Mixtures of the amorphous titanium dioxide and Li 4Ti 5O 12 showed a similar electrochemical profile and capacity to Li 4Ti 5O 12 but with the addition of a sloping region to the end of the discharge curve that could be advantageous for determining state-of-charge in systems using Li 4Ti 5O 12.

A process for ensuring regulatory compliance at the INEL`s buried waste integrated demonstrations

Energy Technology Data Exchange (ETDEWEB)

Cannon, P.G.; Watson, L.R.; Blacker, P.B. [EG and G Idaho, Inc., Idaho Falls, ID (United States). Idaho National Engineering Lab.

1993-03-01

The Buried Waste Integrated Demonstration Program is funded by the Department of Energy Office of Technology Development. The mission of this Integrated Demonstration is to identify, evaluate, and demonstrate a suite of innovative technologies for the remediation of radioactive and hazardous waste buried throughout the DOE complex between 1950 and 1970. The program approach to development of a long-range strategy for improving buried waste remediation capabilities is to combine systems analysis with already identified remediation needs for DOE complex buried waste. The systems analysis effort has produced several configuration options (a top-level block diagram of a cradle-to-grave remediation system) capable of remediating the transuranic-contaminated waste pits and trenches at the Idaho National Engineering Laboratory. Technologies for demonstration are selected using three criteria: (a) the ability to satisfy a specific buried waste need, (b) the ability to satisfy functional and operational requirements defined for functional sub-elements in a configuration option, and (c) performance against Comprehensive Environmental Restoration and Compensation Liability Act selection criteria, such as effectiveness, implementability, and cost. Early demonstrations experienced problems with missed requirements, prompting the Buried Waste Integrated Demonstration Program Office to organize a Corrective Action Team to identify the cause and recommend corrective actions. The result of this team effort is the focus of this paper.

Ion implantation and amorphous metals

International Nuclear Information System (INIS)

Hohmuth, K.; Rauschenbach, B.

1981-01-01

This review deals with ion implantation of metals in the high concentration range for preparing amorphous layers (>= 10 at%, implantation doses > 10 16 ions/cm 2 ). Different models are described concerning formation of amorphous phases of metals by ion implantation and experimental results are given. The study of amorphous phases has been carried out by the aid of Rutherford backscattering combined with the channeling technique and using transmission electron microscopy. The structure of amorphous metals prepared by ion implantation has been discussed. It was concluded that amorphous metal-metalloid compounds can be described by a dense-random-packing structure with a great portion of metal atoms. Ion implantation has been compared with other techniques for preparing amorphous metals and the adventages have been outlined

Coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compound

International Nuclear Information System (INIS)

Lu, T.P.; Wu, C.C.; Chou, W.H.; Lan, M.D.

2010-01-01

The magnetic and superconducting properties of the Sm-doped FeAs-based superconducting compound were investigated under wide ranges of temperature and magnetic field. After the systematical magnetic ion substitution, the superconducting transition temperature decreases with increasing magnetic moment. The hysteresis loop of the La 0.87-x Sm x Sr 0.13 FeAsO sample shows a superconducting hysteresis and a paramagnetic background signal. The paramagnetic signal is mainly attributed to the Sm moments. The experiment demonstrates that the coexistence of magnetism and superconductivity in the hole doped FeAs-based superconducting compounds is possible. Unlike the electron doped FeAs-based superconducting compounds SmFeAsOF, the hole doped superconductivity is degraded by the substitution of La by Sm. The hole-doped and electron-doped sides are not symmetric.

Sexual and Overall Quality of Life Improvements After Surgical Correction of "Buried Penis".

Science.gov (United States)

Hughes, Duncan B; Perez, Edgar; Garcia, Ryan M; Aragón, Oriana R; Erdmann, Detlev

2016-05-01

"Buried penis" is an increasing burden in our population with many possible etiologies. Although surgical correction of buried penis can be rewarding and successful for the surgeon, the psychological and functional impact of buried penis on the patient is less understood. The study's aim was to evaluate the sexual satisfaction and overall quality of life before and after buried penis surgery in a single-surgeon's patient population using a validated questionnaire (Changes in Sexual Functioning Questionnaire short-form). Using Likert scales generated from the questionnaire and 1-tailed paired t test analysis, we found that there was significantly improved sexual function after correction of a buried penis. Variables individually showed that there was significant improvement with sexual pleasure, urinating, and with genital hygiene postoperatively. There were no significant differences concerning frequency of pain with orgasms. Surgical correction of buried penis significantly improves the functional, sexual, and psychological aspects of patient's lives.

Design of buried concrete encasements

International Nuclear Information System (INIS)

Drake, R.M.

1989-01-01

The operation of many Department of Energy (DOE) sites requires the transfer of radioactive liquid products from one location to another. DOE Order 6430.1A requires that the transfer pipelines be designed and constructed so that any leakage can be detected and contained before it reaches the environment. One design option often considered to meet this requirement is to place the pipeline in a stainless steel-lined, buried concrete encasement. This provides the engineer with the design challenge to integrate standard structural design principles with unique DOE requirements. The complete design of a buried concrete encasement must consider seismic effects, leak detection, leak confinement, radiation shielding, thermal effects, pipe supports, and constructability. This paper contains a brief discussion of each of these design considerations, based on experience gained during the design of concrete encasements for the Process Facilities Modifications (PFM) project at Hanford

Buried waste integrated demonstration FY 94 deployment plan

International Nuclear Information System (INIS)

Hyde, R.A.; Walker, S.; Garcia, M.M.

1994-05-01

The Buried Waste Integrated Demonstration (BWID) is a program funded by the U.S. Department of Energy Office of Technology Development. BWID supports the applied research, development, demonstration, testing, and evaluation of a suite of advanced technologies that together form a comprehensive remediation system for the effective and efficient remediation of buried waste. The fiscal year (FY) 1994 effort will fund thirty-eight technologies in five areas of buried waste site remediation: site characterization, waste characterization, retrieval, treatment, and containment/stabilization. This document is the basic operational planning document for deployment of all BWID projects. Discussed in this document are the BWID preparations for INEL field demonstrations, INEL laboratory demonstrations, non-INEL demonstrations, and paper studies. Each technology performing tests will prepare a test plan to detail the specific procedures, objectives, and tasks of each test. Therefore, information specific to testing each technology is intentionally omitted from this document

Chaotic dynamics dependence on doping density in weakly coupled GaAs/AlAs superlattices

International Nuclear Information System (INIS)

Yang Gui; Zhang Fengying; Li Yuanhong; Li Yuqi

2012-01-01

A discrete sequential tunneling model is used for studying the influence of the doping density on the dynamical behaviors in weakly coupled GaAs/AlAs superlattices. Driven by the DC bias, the system exhibits self-sustained current oscillations induced by the period motion of the unstable electric field domain, and an electrical hysteresis in the loop of current density voltage curve is deduced. It is found that the hysteresis range strongly depends on the doping density, and the width of the hysteresis loop increases with increasing the doping density. By adding an external driving ac voltage, more complicated nonlinear behaviors are observed including quasiperiodicity, period-3, and the route of an inverse period-doubling to chaos when the driving frequency changes. (semiconductor physics)

Thermal decomposition behaviors of magnesium borohydride doped with metal fluoride additives

International Nuclear Information System (INIS)

Zhang, Z.G.; Wang, H.; Liu, J.W.; Zhu, M.

2013-01-01

Highlights: • The decomposition proceeded through several distinct steps. • The mixed materials show a dramatically low initial hydrogen release temperature. • The additives react with the Mg–B–H compounds rather than acting as catalysts. • The reaction process was studied using an in situ TEM. - Abstract: The thermal decomposition behaviors of Magnesium borohydride [Mg(BH 4 ) 2 ] and metal fluoride doped mixtures were studied by temperature programmed desorption measurement/mass spectrometry (TPD/MS), differential scanning calorimetry (DSC) and in situ transmission electron microscope (TEM) observations. The decomposition and release of hydrogen proceeded through several distinct steps, including two polymorphic transitions, ionic Mg(BH 4 ) 2 melting with solid Mg–B–H amorphous phase formation and Mg–B–H decomposition. The addition of additives such as CaF 2 , ZnF 2 and TiF 3 resulted in a decrease in the hydrogen release temperature. ZnF 2 and TiF 3 reduced the initial hydrogen release temperature to ca. 50 °C. However, hydrogen release during the transformation from γ-Mg(BH 4 ) 2 to the amorphous Mg–B–H compounds at ca. 300 °C was only 4.5 wt.% in contrast to 9.8 wt.% for the direct decomposition of pure Mg(BH 4 ) 2 . TEM observations confirmed that ZnF 2 and TiF 3 reacted with amorphous Mg–B–H compounds rather than acting as catalysts

Test plan for buried waste containment system materials

International Nuclear Information System (INIS)

Weidner, J.; Shaw, P.

1997-03-01

The objectives of the FY 1997 barrier material work at the Idaho National Engineering and Environmental Laboratory are to (1) select a waste barrier material and verify that it is compatible with the Buried Waste Containment System Process, and (2) determine if, and how, the Buried Waste Containment System emplacement process affects the material properties and performance (on proof of principle scale). This test plan describes a set of measurements and procedures used to validate a waste barrier material for the Buried Waste Containment System. A latex modified proprietary cement manufactured by CTS Cement Manufacturing Company will be tested. Emplacement properties required for the Buried Waste Containment System process are: slump between 8 and 10 in., set time between 15 and 30 minutes, compressive strength at set of 20 psi minimum, and set temperature less than 100 degrees C. Durability properties include resistance to degradation from carbonate, sulfate, and waste-site soil leachates. A set of baseline barrier material properties will be determined to provide a data base for comparison with the barrier materials when tested in the field. The measurements include permeability, petrographic analysis to determine separation and/or segregation of mix components, and a set of mechanical properties. The measurements will be repeated on specimens from the field test material. The data will be used to determine if the Buried Waste Containment System equipment changes the material. The emplacement properties will be determined using standard laboratory procedures and instruments. Durability of the barrier material will be evaluated by determining the effect of carbonate, sulfate, and waste-site soil leachates on the compressive strength of the barrier material. The baseline properties will be determined using standard ASTM procedures. 9 refs., 1 fig., 2 tabs

Buried and Surface Polymetallic Nodule Distribution in the Eastern CLARION-CLIPPERTON Zone: Main Distinctions and Similarities

Science.gov (United States)

Kotlinski, R.; Stoyanova, V.

The distribution pattern, abundance variations, morphology, chemical and mineralogical composition of buried polymetallic nodules in the eastern Clarion-Clipperton Zone (CCZ) are presented. Our observations are based on data collected from 59 boxcore stations, which comprise about 22.6% of all sampled stations in the Interoceanmetal exploration area site B2 in the eastern CCZ, with recorded buried and surface polymetallic nodules. The majority of stations with buried nodules (>90%) is below 4300 m water depth and is associated mainly with seafloor hills and slopes of ridges and depressions. Buried nodules lie completely beneath the active sediment-water boundary layer (with thickness range from 0 to 15 cm), and they are vertically recorded down to the 45 cm in sediment cores. Abundance of buried nodules varies from 0.2 to 22.1 kg/m2, averaging 3.2 kg/m2. By comparison, surface nodules are more abundant, varying from 0 to 20.2 kg/m2, averaging 10.3 kg/m2. As a general rule the size of buried nodules is larger than surface nodules, and >27% of recovered buried nodules exceed 10 cm in diameter. It is assumed that more than 90% of analyzed buried nodules have a diagenetic origin; however, the identification of factors and conditions responsible for their formation still remains unknown.

Amorphization-induced strong localization of electronic states in CsPbBr3 and CsPbCl3 studied by optical absorption measurements

Science.gov (United States)

Kondo, S.; Sakai, T.; Tanaka, H.; Saito, T.

1998-11-01

Optical absorption spectra of amorphous CsPbX3 films (X=Br,Cl) are characterized by two Gaussian bands near the fundamental edge, with the optical energy gap largely blueshifted and the absorption intensity strongly reduced as compared with the crystalline films. The peak energies of the bands are close to those of the A and C bands of Pb-doped alkali halides. The spectral features are discussed in terms of a molecular orbital theory based on a quasicomplex Pb2+(X-)6 model similar to the complex model for the doped alkali halides. It is shown that not only Pb2+ 6s and 6p extended states near the band edges but also X- p states contributing to upper valence bands are localized by amorphization. The transitions from the localized Pb2+ 6s to 6p states produce the spin-orbit allowed 3P1 and dipole allowed 1P1 states responsible for the two Gaussians. The localized X- p states lie deeper in energy than the localized Pb2+ 6s state and only contribute to higher-energy absorption above the Gaussian bands, giving the reason for the reduced absorption near the fundamental edge. The blueshift of the optical energy gap is attributed to the disappearance of k dispersions for these one-electron states.

Ge{sup 4+} doped TiO{sub 2} for stoichiometric degradation of warfare agents

Energy Technology Data Exchange (ETDEWEB)

Stengl, Vaclav, E-mail: stengl@iic.cas.cz [Department of Solid State Chemistry, Institute of Inorganic Chemistry AS CR v.v.i., 250 68 Rez (Czech Republic); Grygar, Tomas Matys [Department of Solid State Chemistry, Institute of Inorganic Chemistry AS CR v.v.i., 250 68 Rez (Czech Republic); Oplustil, Frantisek; Nemec, Tomas [Military Technical Institute of Protection Brno, Veslarska 230, 628 00 Brno (Czech Republic)

2012-08-15

Highlights: Black-Right-Pointing-Pointer We prepared nanodisperse Ge{sup 4+} doped titania by a novel synthesis method. Black-Right-Pointing-Pointer Synthesis does not involve organic solvents, organometallics nor thermal processes. Black-Right-Pointing-Pointer The prepared materials are efficient in removal of chemical warfare agents. Black-Right-Pointing-Pointer Ge{sup 4+} doping improves rate of removal of soman and agent VX by TiO{sub 2}. - Abstract: Germanium doped TiO{sub 2} was prepared by homogeneous hydrolysis of aqueous solutions of GeCl{sub 4} and TiOSO{sub 4} with urea. The synthesized samples were characterized by X-ray diffraction, scanning electron microscopy, EDS analysis, specific surface area (BET) and porosity determination (BJH). Ge{sup 4+} doping increases surface area and content of amorphous phase in prepared samples. These oxides were used in an experimental evaluation of their reactivity with chemical warfare agent, sulphur mustard, soman and agent VX. Ge{sup 4+} doping worsens sulphur mustard degradation and improves soman and agent VX degradation. The best degree of removal (degradation), 100% of soman, 99% of agent VX and 95% of sulphur mustard, is achieved with sample with 2 wt.% of germanium.

47 CFR 32.2423 - Buried cable.

Science.gov (United States)

2010-10-01

... FOR TELECOMMUNICATIONS COMPANIES Instructions for Balance Sheet Accounts § 32.2423 Buried cable. (a... of cleaning manholes and ducts in connection with construction work and the cost of permits and...

Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Chasin, Adrian, E-mail: adrian.chasin@imec.be; Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul [imec, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium); Simoen, Eddy [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium); Gielen, Georges [ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium)

2014-02-24

The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼10{sup 19} cm{sup −3} eV{sup −1} at the conduction band edge and a value of ∼10{sup 17} cm{sup −3} eV{sup −1} at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

Buried injector logic, a vertical IIL using deep ion implantation

NARCIS (Netherlands)

Mouthaan, A.J.

1987-01-01

A vertically integrated alternative for integrated injection logic has been realized, named buried injector logic (BIL). 1 MeV ion implantations are used to create buried layers. The vertical pnp and npn transistors have thin base regions and exhibit a limited charge accumulation if a gate is

Preparation and Cycling Performance of Iron or Iron Oxide Containing Amorphous Al-Li Alloys as Electrodes

Directory of Open Access Journals (Sweden)

Franziska Thoss

2014-12-01

Full Text Available Crystalline phase transitions cause volume changes, which entails a fast destroying of the electrode. Non-crystalline states may avoid this circumstance. Herein we present structural and electrochemical investigations of pre-lithiated, amorphous Al39Li43Fe13Si5-powders, to be used as electrode material for Li-ion batteries. Powders of master alloys with the compositions Al39Li43Fe13Si5 and Al39Li43Fe13Si5 + 5 mass-% FeO were prepared via ball milling and achieved amorphous/nanocrystalline states after 56 and 21.6 h, respectively. In contrast to their Li-free amorphous pendant Al78Fe13Si9, both powders showed specific capacities of about 400 and 700 Ah/kgAl, respectively, after the third cycle.

Influence of ligands on the photoluminescent properties of Eu3+ in europium β-diketonate/PMMA-doped systems

International Nuclear Information System (INIS)

Liu, H.-G.; Park, Seongtae; Jang, Kiwan; Feng, X.-S.; Kim, Changdae; Seo, H.-J.; Lee, Y.-I.

2004-01-01

Three kinds of europium β-diketonates Eu(DBM) 3 , Eu(BA) 3 and Eu(TTA) 3 (DBM: Dibenzoylmethane; BA: 1-Benzoylacetone; TTA: Thenoyltrifluoroacetone) were doped in poly(methyl methacrylate) (PMMA) matrix. The doped systems were studied by using photoluminescent (PL) spectroscopy, emission decay experiments and X-ray diffractometry. Eu(III) ions in the doped Eu(DBM) 3 /PMMA systems have two distinct symmetric sites and the emission band changes greatly with the compositions. Eu(III) in the Eu(BA) 3 /PMMA systems gives only one symmetric site in the doped systems and the emission band changes slightly with the compositions. Although two distinct symmetric sites of Eu(III) can be distinguished in the doped systems of Eu(TTA) 3 /PMMA, the two sites have similar 5 D 0 lifetimes and the luminescent spectra almost do not change with the compositions. XRD reveals that crystallites were formed in the doped Eu(DBM) 3 /PMMA systems that have different crystalline structure from that of the chelate, and Eu(BA) 3 and Eu(TTA) 3 exist in amorphous state in the doped systems. The difference between the PL properties and structures of the doped systems for the three kinds of chelates should be attributed to different interactions between the chelate molecules and between the chelate and PMMA

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

Science.gov (United States)

Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

2011-05-01

The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

Solvothermally synthesized europium-doped CdS nanorods: applications as phosphors

International Nuclear Information System (INIS)

Kumar, Sunil; Jindal, Zinki; Kumari, Nitu; Verma, Narendra Kumar

2011-01-01

To exploit the photoluminescent behavior of CdS at nanoscale with different doping concentration of europium—a rare earth element, we report the synthesis of Eu-doped CdS nanorods by using low temperature solvothermal process by using ethylenediamine. The outcomes can have future applications as phosphors, photovoltaic cells, lasers, light emitting diodes, bio-imaging, and sensors. The doping was confirmed by electron dispersive spectroscopy supported by X-ray diffraction. From scanning electron microscopy and transmission electron microscopy analysis it was observed that the average diameter of the Cd 1−x Eu x S nanorods is about 10–12 nm having lengths in the range of 50–100 nm. UV–Visible spectroscopy study was carried out to determine the band gap of the nanorods and the absorbance peaks showed blue shift with respect to the bulk CdS. The blue shift was also observed as the doping concentration of Eu increases. From photoluminescence (PL) studies at λ ex = 450 nm, peaks at 528 and 540 nm were observed due to CdS, peak at 570 nm is due to defects related transitions, while the peak at 613 nm is due to Eu. As the doping concentration of Eu is increased the intensity of the luminescent peak at 613 nm is increased. Thermogravimetric analysis showed the nanorods are thermally stable up to 300 °C. The traces of impurities adsorbed on the nanorods were confirmed by Fourier transform infrared spectroscopy.

Long-Term Stability of New Co-Amorphous Drug Binary Systems: Study of Glass Transitions as a Function of Composition and Shelf Time

Directory of Open Access Journals (Sweden)

Luz María Martínez

2016-12-01

Full Text Available The amorphous state is of particular interest in the pharmaceutical industry due to the higher solubility that amorphous active pharmaceutical ingredients show compared to their respective crystalline forms. Due to their thermodynamic instability, drugs in the amorphous state tend to recrystallize; in order to avoid crystallization, it has been a common strategy to add a second component to hinder the crystalline state and form a thermally stable co-amorphous system, that is to say, an amorphous binary system which retains its amorphous structure. The second component can be a small molecule excipient (such as a sugar or an aminoacid or a second drug, with the advantage that a second active pharmaceutical ingredient could be used for complementary or combined therapeutic purposes. In most cases, the compositions studied are limited to 1:1, 2:1 and 1:2 molar ratios, leaving a gap of information about phase transitions and stability on the amorphous state in a wider range of compositions. In the present work, a study of novel co–amorphous formulations in which the selection of the active pharmaceutical ingredients was made according to the therapeutic effect is presented. Resistance against crystallization and behavior of glass transition temperature ( T g were studied through calorimetric measurements as a function of composition and shelf time. It was found that binary formulations with T g temperatures higher than those of pure components presented long-term thermal stability. In addition, significant increments of T g values, of as much as 15 ∘ C, were detected as a result of glass relaxation at room temperature during storage time; this behavior of glass transition has not been previously reported for co-amorphous drugs. Based on these results, it can be concluded that monitoring behavior of T g and relaxation processes during the first weeks of storage leads to a more objective evaluation of the thermomechanical stability of an amorphous

Retrieval of buried waste using conventional equipment

International Nuclear Information System (INIS)

Valentich, D.J.

1994-01-01

A field test was conducted to determine the effectiveness of using conventional type construction equipment for the retrieval of buried transuranic (TRU) waste. A cold (nonhazardous and nonradioactive test pit 841 m 3 in volume) was constructed with boxes and drums filled with simulated waste materials, such as metal, plastic, wood, concrete, and sludge. Large objects, including truck beds, vessels, vaults, pipes, and beams were also placed in the pit. These materials were intended to simulate the type of waste found in existing TRU buried waste pits and trenches. A series of commercially available equipment items, such as excavators and tracked loaders outfitted with different end effectors, were used to remove the simulated waste. Work was performed from both the abovegrade and belowgrade positions. During the demonstration, a number of observations, measurements, and analyses were performed to determine which equipment was the most effective in removing the waste. The retrieval rates for the various excavation techniques were recorded. The inherent dust control capabilities of the excavation methods used were also observed

Superconductivity in Sm-doped CaFe2As2 single crystals

Science.gov (United States)

Dong-Yun, Chen; Bin-Bin, Ruan; Jia, Yu; Qi, Guo; Xiao-Chuan, Wang; Qing-Ge, Mu; Bo-Jin, Pan; Tong, Liu; Gen-Fu, Chen; Zhi-An, Ren

2016-06-01

In this article, the Sm-doping single crystals Ca1 - x Sm x Fe2As2 (x = 0 ˜ 0.2) were prepared by the CaAs flux method, and followed by a rapid quenching treatment after the high temperature growth. The samples were characterized by structural, resistive, and magnetic measurements. The successful Sm-substitution was revealed by the reduction of the lattice parameter c, due to the smaller ionic radius of Sm3+ than Ca2+. Superconductivity was observed in all samples with onset T c varying from 27 K to 44 K upon Sm-doping. The coexistence of a collapsed phase transition and the superconducting transition was found for the lower Sm-doping samples. Zero resistivity and substantial superconducting volume fraction only happen in higher Sm-doping crystals with the nominal x > 0.10. The doping dependences of the c-axis length and onset T c were summarized. The high-T c observed in these quenched crystals may be attributed to simultaneous tuning of electron carriers doping and strain effect caused by lattice reduction of Sm-substitution. Project supported by the National Natural Science Foundation of China (Grant No. 11474339), the National Basic Research Program of China (Grant Nos. 2010CB923000 and 2011CBA00100), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB07020100).