Increasing the aperture of x-ray mosaic lenses by freeze drying

International Nuclear Information System (INIS)

Koch, F; Marschall, F; Meiser, J; Márkus, O; Faisal, A; Schröter, T; Meyer, P; Kunka, D; Last, A; Mohr, J

2015-01-01

Point focus x-ray mosaic lenses are limited in aperture by the aspect ratio that can be reached in the micro fabrication process. In lithography based micro fabrication processes, which are used to fabricate the lens pillar structures, the achievable aspect ratio is restricted by structure collapse due to capillary forces which occur during drying after development. Capillary forces can be avoided by freeze drying, hence avoiding the direct phase change from liquid to gas. Substituting conventional drying by freeze drying using cyclohexane at a temperature of  −10 °C, we could increase the achievable aspect ratio for the triangular pillar structures with edge length of 10 to 45 µm of the x-ray mosaic lenses by up to a factor of 2.2 with no further changes in process, material or structural geometry. A maximum aspect ratio of 30 was achieved for pillars with 10 µm edge length. The process can readily be employed to other structures or lithography techniques. (paper)

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

Science.gov (United States)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-06-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

Science.gov (United States)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-04-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Metrology for Grayscale Lithography

International Nuclear Information System (INIS)

Murali, Raghunath

2007-01-01

Three dimensional microstructures find applications in diffractive optical elements, photonic elements, etc. and can be efficiently fabricated by grayscale lithography. Good process control is important for achieving the desired structures. Metrology methods for grayscale lithography are discussed. Process optimization for grayscale e-beam lithography is explored and various process parameters that affect the grayscale process are discussed

Challenges of anamorphic high-NA lithography and mask making

Science.gov (United States)

Hsu, Stephen D.; Liu, Jingjing

2017-06-01

Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV `Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI', (2015) doi: 10

Laser Interference Lithography

NARCIS (Netherlands)

van Wolferen, Hendricus A.G.M.; Abelmann, Leon; Hennessy, Theodore C.

In this chapter we explain how submicron gratings can be prepared by Laser Interference Lithography (LIL). In this maskless lithography technique, the standing wave pattern that exists at the intersection of two coherent laser beams is used to expose a photosensitive layer. We show how to build the

Advanced 0.3-NA EUV lithography capabilities at the ALS

International Nuclear Information System (INIS)

Naulleau, Patrick; Anderson, Erik; Dean, Kim; Denham, Paul; Goldberg, Kenneth A.; Hoef, Brian; Jackson, Keith

2005-01-01

For volume nanoelectronics production using Extreme ultraviolet (EUV) lithography [1] to become a reality around the year 2011, advanced EUV research tools are required today. Microfield exposure tools have played a vital role in the early development of EUV lithography [2-4] concentrating on numerical apertures (NA) of 0.2 and smaller. Expected to enter production at the 32-nm node with NAs of 0.25, EUV can no longer rely on these early research tools to provide relevant learning. To overcome this problem, a new generation of microfield exposure tools, operating at an NA of 0.3 have been developed [5-8]. Like their predecessors, these tools trade off field size and speed for greatly reduced complexity. One of these tools is implemented at Lawrence Berkeley National Laboratory's Advanced Light Source synchrotron radiation facility. This tool gets around the problem of the intrinsically high coherence of the synchrotron source [9,10] by using an active illuminator scheme [11]. Here we describe recent printing results obtained from the Berkeley EUV exposure tool. Limited by the availability of ultra-high resolution chemically amplified resists, present resolution limits are approximately 32 nm for equal lines and spaces and 27 nm for semi-isolated lines

X-ray lenses with large aperture

International Nuclear Information System (INIS)

Simon, Markus

2010-01-01

Up to now, most X-ray imaging setups are based on absorption contrast imaging. There is a demand for focused X-rays in many X-ray analysis applications, either to increase the resolution of an imaging system, or, to reduce the time effort of an experiment through higher photon flux. For photon energies higher than 15 keV refractive X-ray optics are more efficient in comparison to non-refractive X-ray optics. The aim of this work was to develop X-ray lenses with large apertures and high transparency. By increasing the number of refracting surfaces while removing unnecessary lens material such lenses have been developed. Utilizing this approach the overall beam deflection angle is large with respect to the lens material it propagates through and so the transparency of the lens is increased. Within this work, X-ray lenses consisting of several thousands of prisms with an edge length in the range of micrometers have been developed and fabricated by deep X-ray lithography. Deep X-ray lithography enables high precision microstrucures with smooth sidewalls and large aspect ratios. The aperture of high-transparency X-ray lenses made this way is greater than 1 mm. They are suitable for photon energies in the range of 8 keV to 24 keV and offer a focal width of smaller than 10 μm at a transparency of around 40%. Furthermore, rolled X-ray lenses have been developed, that are made out of a microstructured polyimide film, which is cut according to the requirements regarding focal length and photon energy. The microstructured film is fabricated by molding, using an anisotropically etched silicon wafer as molding tool. Its mean roughness is in the range of nanometers. The film features prismatic structures, its surface topology is similar to an asparagus field. The measured diameter of the point focus was 18 μm to 31 μm, the calculated opticla efficiency was 37%. Future work will concentrate on increasing the aspect ratio of Prism Lenses and on increasing the rolling accuracy

Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithography

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, M.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2008-01-01

The fabrication of a stamp reinforced with silicon nitride is presented for its use in nanoimprint lithography. The fabrication process is based on edge lithography using conventional optical lithography and wet anisotropic etching of 110 silicon wafers. SiO2 nano-ridges of 20 nm in width were

Apertures

CERN Document Server

Hansen, R C

2014-01-01

Microwave Scanning Antennas, Volume I: Apertures is a comprehensive account of phased arrays, multiple beam arrays, time domain and synthetic apertures, and adaptive antennas. Advances in continuous apertures and near field theory are discussed. Low noise and monopulse apertures, optical scanners, and large radomes are also covered, along with radio astronomy instruments and associated theory.Comprised of five chapters, this volume begins with an overview of aperture theory as well as aperture distributions and near field theory. The second and third chapters deal with mechanically steered and

Atom lithography of Fe

NARCIS (Netherlands)

Sligte, te E.; Smeets, B.; van der Stam, K.M.R.; Herfst, R.W.; Straten, van der P.; Beijerinck, H.C.W.; Leeuwen, van K.A.H.

2004-01-01

Direct write atom lithography is a technique in which nearly resonant light is used to pattern an atom beam. Nanostructures are formed when the patterned beam falls onto a substrate. We have applied this lithography scheme to a ferromagnetic element, using a 372 nm laser light standing wave to

Design for manufacturability with advanced lithography

CERN Document Server

Yu, Bei

2016-01-01

This book introduces readers to the most advanced research results on Design for Manufacturability (DFM) with multiple patterning lithography (MPL) and electron beam lithography (EBL).  The authors describe in detail a set of algorithms/methodologies to resolve issues in modern design for manufacturability problems with advanced lithography.  Unlike books that discuss DFM from the product level, or physical manufacturing level, this book describes DFM solutions from a circuit design level, such that most of the critical problems can be formulated and solved through combinatorial algorithms. Enables readers to tackle the challenge of layout decompositions for different patterning techniques; Presents a coherent framework, including standard cell compliance and detailed placement, to enable Triple Patterning Lithography (TPL) friendly design; Includes coverage of the design for manufacturability with E-Beam lithography.

Pattern transfer on fused silica samples using sub-aperture reactive ion beam etching

Energy Technology Data Exchange (ETDEWEB)

Miessler, Andre; Arnold, Thomas [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig (Germany)

2012-07-01

In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role. Using a Kaufman-typed ion source with NF{sub 3} as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot and a layer formation of silicon nitride, handicaps the etching process mainly in the beam periphery where the sputtering contribution decrease. These side effects influence the pattern transfer of trench structures, produced in AZ MIR 701 photoresist by lithography on a 2'' fused silica plate, by changing the selectivity due to modified chemical reactions of the resist layer. Concerning this we investigate a RF-Ion source for sub aperture reactive ion beam applications and finally we examine the pattern transfer on large fused silica plates using NF{sub 3}-sub-aperture RIBE.

Polymer microlens replication by Nanoimprint Lithography using proton beam fabricated Ni stamp

International Nuclear Information System (INIS)

Dutta, R.K.; Kan, J.A. van; Bettiol, A.A.; Watt, F.

2007-01-01

It is essential to have a simplified and a rapid method for fabricating micro/nano structures in different kinds of polymeric materials. Though it is possible to fabricate arrays of microlens directly by P beam writing (PBW), it is restricted to a few types of resist materials. Therefore we have fabricated a Ni electroplated metallic stamp comprising of arrays of inverse/negative features of microlenses. The metallic stamp of about 500 μm thick is made on a silicon wafer coated with 10 μm thick polymethylglutarimide (PMGI) resist and the desired structures are written by PBW followed by thermal reflow and Ni electroplating. An array of microlenses is imprinted on a polycarbonate (PC) substrate by the Nanoimprint Lithography (NIL) technique and the replicated microlenses featuring various numerical apertures, diameters and pitches are characterized

Extension of optical lithography by mask-litho integration with computational lithography

Science.gov (United States)

Takigawa, T.; Gronlund, K.; Wiley, J.

2010-05-01

Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

Lithography requirements in complex VLSI device fabrication

International Nuclear Information System (INIS)

Wilson, A.D.

1985-01-01

Fabrication of complex very large scale integration (VLSI) circuits requires continual advances in lithography to satisfy: decreasing minimum linewidths, larger chip sizes, tighter linewidth and overlay control, increasing topography to linewidth ratios, higher yield demands, increased throughput, harsher device processing, lower lithography cost, and a larger part number set with quick turn-around time. Where optical, electron beam, x-ray, and ion beam lithography can be applied to judiciously satisfy the complex VLSI circuit fabrication requirements is discussed and those areas that are in need of major further advances are addressed. Emphasis will be placed on advanced electron beam and storage ring x-ray lithography

Innovative SU-8 Lithography Techniques and Their Applications

Directory of Open Access Journals (Sweden)

Jeong Bong Lee

2014-12-01

Full Text Available SU-8 has been widely used in a variety of applications for creating structures in micro-scale as well as sub-micron scales for more than 15 years. One of the most common structures made of SU-8 is tall (up to millimeters high-aspect-ratio (up to 100:1 3D microstructure, which is far better than that made of any other photoresists. There has been a great deal of efforts in developing innovative unconventional lithography techniques to fully utilize the thick high aspect ratio nature of the SU-8 photoresist. Those unconventional lithography techniques include inclined ultraviolet (UV exposure, back-side UV exposure, drawing lithography, and moving-mask UV lithography. In addition, since SU-8 is a negative-tone photoresist, it has been a popular choice of material for multiple-photon interference lithography for the periodic structure in scales down to deep sub-microns such as photonic crystals. These innovative lithography techniques for SU-8 have led to a lot of unprecedented capabilities for creating unique micro- and nano-structures. This paper reviews such innovative lithography techniques developed in the past 15 years or so.

The impact of 14-nm photomask uncertainties on computational lithography solutions

Science.gov (United States)

Sturtevant, John; Tejnil, Edita; Lin, Tim; Schultze, Steffen; Buck, Peter; Kalk, Franklin; Nakagawa, Kent; Ning, Guoxiang; Ackmann, Paul; Gans, Fritz; Buergel, Christian

2013-04-01

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models, which must balance accuracy demands with simulation runtime boundary conditions, rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. While certain system input variables, such as scanner numerical aperture, can be empirically tuned to wafer CD data over a small range around the presumed set point, it can be dangerous to do so since CD errors can alias across multiple input variables. Therefore, many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total CD control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine with a simulation sensitivity study, the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD Bias values are based on state of the art mask manufacturing data and other variables changes are speculated, highlighting the need for improved metrology and awareness.

Immersion lithography defectivity analysis at DUV inspection wavelength

Science.gov (United States)

Golan, E.; Meshulach, D.; Raccah, N.; Yeo, J. Ho.; Dassa, O.; Brandl, S.; Schwarz, C.; Pierson, B.; Montgomery, W.

2007-03-01

Significant effort has been directed in recent years towards the realization of immersion lithography at 193nm wavelength. Immersion lithography is likely a key enabling technology for the production of critical layers for 45nm and 32nm design rule (DR) devices. In spite of the significant progress in immersion lithography technology, there remain several key technology issues, with a critical issue of immersion lithography process induced defects. The benefits of the optical resolution and depth of focus, made possible by immersion lithography, are well understood. Yet, these benefits cannot come at the expense of increased defect counts and decreased production yield. Understanding the impact of the immersion lithography process parameters on wafer defects formation and defect counts, together with the ability to monitor, control and minimize the defect counts down to acceptable levels is imperative for successful introduction of immersion lithography for production of advanced DR's. In this report, we present experimental results of immersion lithography defectivity analysis focused on topcoat layer thickness parameters and resist bake temperatures. Wafers were exposed on the 1150i-α-immersion scanner and 1200B Scanner (ASML), defect inspection was performed using a DUV inspection tool (UVision TM, Applied Materials). Higher sensitivity was demonstrated at DUV through detection of small defects not detected at the visible wavelength, indicating on the potential high sensitivity benefits of DUV inspection for this layer. The analysis indicates that certain types of defects are associated with different immersion process parameters. This type of analysis at DUV wavelengths would enable the optimization of immersion lithography processes, thus enabling the qualification of immersion processes for volume production.

Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system

International Nuclear Information System (INIS)

Ngo, V.V.; Akker, B.; Leung, K.N.; Noh, I.; Scott, K.L.; Wilde, S.

2002-01-01

A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS resists using 75 keV H+ are presented in this paper. Proof-of-principle electronic pattern switching together with 10x reduction ion optics (using a pattern generator made of nine 50-(micro)m switchable apertures) has been performed and is reported in this paper. In addition, the fabrication of a micro-fabricated pattern generator [3] on an SOI membrane is also presented

Data sharing system for lithography APC

Science.gov (United States)

Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

2007-03-01

We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

Lithography alternatives meet design style reality: How do they "line" up?

Science.gov (United States)

Smayling, Michael C.

2016-03-01

Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to

SOR Lithography in West Germany

Science.gov (United States)

Heuberger, Anton

1989-08-01

The 64 Mbit DRAM will represent the first generation of integrated circuits which cannot be produced reasonably by means of optical lithography techniques. X-ray lithography using synchrotron radiation seems to be the most promising method in overcoming the problems in the sub-0.5 micron range. The first year of production of the 64 Mbit DRAM will be 1995 or 1996. This means that X-ray lithography has to show its applicability in an industrial environment by 1992 and has to prove that the specifications of a 64 Mbit DRAM technology can actually be achieved. Part of this task is a demonstration of production suitable equipment such as the X-ray stepper, including an appropriate X-ray source and measurement and inspection tools. The most important bottlenecks on the way toward reaching these goals are linked to the 1 x scale mask technology, especially the pattern definition accuracy and zero level of printing defects down to the order of magnitude of 50 nm. Specifically, fast defect detection methods on the basis of high resolution e-beam techniques and repair methods have to be developed. The other problems of X-ray lithography, such as high quality single layer X-ray resists, X-ray sources and stepper including alignment are either well on the way or are already solved.

Optimized design for the scattering with angular limitation in projection electron-beam lithography based electron projection system

International Nuclear Information System (INIS)

Xiu, K.; Gibson, J. M.

2000-01-01

We investigate the design for a scattering with angular limitation in projection electron-beam lithography (SCALPEL) based electron projection system with a demagnification of -4. By a ''field-flip'' process we can construct a doublet in which the magnetic field has a flat feature in most of the optic column but opposite sign at two sides connected by a sharp transition region. Such a theoretical model can give a near zero chromatic aberration of rotation and much smaller field curvature and astigmatism. Compared with the conventional doublet, the total image blur caused by aberrations at 1/√(2) mm off-axis distance and 1.5 mrad semiangle aperture at the mask side is about only 24 nm for a column length of 400 mm. A shorter column, less than the current 400 mm, is also favored for further reducing the total aberration. These guarantee that we can choose a much larger aperture angle (compared with present 0.5 mrad) and beam current density in such a SCALPEL projection system to achieve higher throughput while still maintaining current resolution. A practical issue for possible magnetic lens design is also discussed. (c) 2000 American Vacuum Society

High-resolution imprint and soft lithography for patterning self-assembling systems

NARCIS (Netherlands)

Duan, X.

2010-01-01

This thesis contributes to the continuous development of patterning strategies in several different areas of unconventional nanofabrication. A series of soft lithography approaches (microcontact printing, nanomolding in capillaries), nanoimprint lithography (NIL), and capillary force lithography

PREVAIL: IBM's e-beam technology for next generation lithography

Science.gov (United States)

Pfeiffer, Hans C.

2000-07-01

PREVAIL - Projection Reduction Exposure with Variable Axis Immersion Lenses represents the high throughput e-beam projection approach to NGL which IBM is pursuing in cooperation with Nikon Corporation as alliance partner. This paper discusses the challenges and accomplishments of the PREVAIL project. The supreme challenge facing all e-beam lithography approaches has been and still is throughput. Since the throughput of e-beam projection systems is severely limited by the available optical field size, the key to success is the ability to overcome this limitation. The PREVAIL technique overcomes field-limiting off-axis aberrations through the use of variable axis lenses, which electronically shift the optical axis simultaneously with the deflected beam so that the beam effectively remains on axis. The resist images obtained with the Proof-of-Concept (POC) system demonstrate that PREVAIL effectively eliminates off- axis aberrations affecting both resolution and placement accuracy of pixels. As part of the POC system a high emittance gun has been developed to provide uniform illumination of the patterned subfield and to fill the large numerical aperture projection optics designed to significantly reduce beam blur caused by Coulomb interaction.

Regular cell design approach considering lithography-induced process variations

OpenAIRE

Gómez Fernández, Sergio

2014-01-01

The deployment delays for EUVL, forces IC design to continue using 193nm wavelength lithography with innovative and costly techniques in order to faithfully print sub-wavelength features and combat lithography induced process variations. The effect of the lithography gap in current and upcoming technologies is to cause severe distortions due to optical diffraction in the printed patterns and thus degrading manufacturing yield. Therefore, a paradigm shift in layout design is mandatory towards ...

Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithography

International Nuclear Information System (INIS)

Tian, Yaolan; Isotalo, Tero J; Konttinen, Mikko P; Li, Jiawei; Heiskanen, Samuli; Geng, Zhuoran; Maasilta, Ilari J

2017-01-01

We demonstrate a method to fabricate narrow, down to a few micron wide metallic leads on top of a three-dimensional (3D) colloidal crystal self-assembled from polystyrene (PS) nanospheres of diameter 260 nm, using electron-beam lithography. This fabrication is not straightforward due to the fact that PS nanospheres cannot usually survive the harsh chemical treatments required in the development and lift-off steps of electron-beam lithography. We solve this problem by increasing the chemical resistance of the PS nanospheres using an additional electron-beam irradiation step, which allows the spheres to retain their shape and their self-assembled structure, even after baking to a temperature of 160 °C, the exposure to the resist developer and the exposure to acetone, all of which are required for the electron-beam lithography step. Moreover, we show that by depositing an aluminum oxide capping layer on top of the colloidal crystal after the e-beam irradiation, the surface is smooth enough so that continuous metal wiring can be deposited by the electron-beam lithography. Finally, we also demonstrate a way to self-assemble PS colloidal crystals into a microscale container, which was fabricated using direct-write 3D laser-lithography. Metallic wiring was also successfully integrated with the combination of a container structure and a PS colloidal crystal. Our goal is to make a device for studies of thermal transport in 3D phononic crystals, but other phononic or photonic crystal applications could also be envisioned. (paper)

The origin of fine structure in near-field scanning optical lithography of an electroactive polymer

International Nuclear Information System (INIS)

Cotton, Daniel V; Belcher, Warwick J; Dastoor, Paul C; Fell, Christopher J

2008-01-01

Near-field scanning optical lithography (NSOL) has been used to produce arbitrary structures of the electroactive polymer polyphenylenevinylene at sizes comparable to optical wavelengths, which are of interest for integrated optical devices. The structures are characterized using AFM and SEM and exhibit interesting fine structure. The characteristic size and shape of the lithographic features and their associated fine structure have been examined in the context of the electric field distribution at the near-field scanning optical microscope tip. In particular, the Bethe-Bouwkamp model for electric field distribution at an aperture has been used in combination with a recently developed model for precursor solubility dependence on UV energy dose to predict the characteristics of lithographic features produced by NSOL. The fine structure in the lithographic features is also investigated and explained. Suggestions for the further improvement of the technique are made.

X-ray lithography

International Nuclear Information System (INIS)

Malek, C.K.

1989-01-01

Any type of lithography is a means of printing a pattern. The suitable lithographic tool is defined according to what kind of application the replication technique is aimed at, that is to say, what size of pattern, on what type of substrate and how many substrates are desired. The trend in all the fields of science and fabrication is to go towards smaller dimensions. Especially in the case of advanced device fabrication in the semiconductor industry, the reduction of dimensions results in a higher density of integrated circuits that will result in lower cost per function and improved performance. Lithography is used to define areas that are usually protected by a resist pattern in relief on a substrate and is followed by a process which transfers the aerial pattern from the resist to the bulk substrate as, for example, in microelectronics, in between two steps of the process or levels that are used for selective diffusion of impurities to produce the desired electrical characteristics, etching, metallization

Progress in coherent lithography using table-top extreme ultraviolet lasers

Science.gov (United States)

Li, Wei

Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution

Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

DEFF Research Database (Denmark)

Kehagias, N.; Reboud, V.; Chansin, G.

2007-01-01

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer...... are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed...... polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three...

Graphene nanoribbon superlattices fabricated via He ion lithography

International Nuclear Information System (INIS)

Archanjo, Braulio S.; Fragneaud, Benjamin; Gustavo Cançado, Luiz; Winston, Donald; Miao, Feng; Alberto Achete, Carlos; Medeiros-Ribeiro, Gilberto

2014-01-01

Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He + -beam lithography can texture graphene with less damage

Graphene nanoribbon superlattices fabricated via He ion lithography

Energy Technology Data Exchange (ETDEWEB)

Archanjo, Braulio S., E-mail: bsarchanjo@inmetro.gov.br [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Fragneaud, Benjamin [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Departamento de Física, Universidade Federal de Juiz de Fora, Juiz de Fora, MG 36036-330 (Brazil); Gustavo Cançado, Luiz [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970 (Brazil); Winston, Donald [Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States); Miao, Feng [Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States); National Laboratory of Solid State Microstructures, School of Physics, National Center of Microstructures and Quantum Manipulation, Nanjing University, Nanjing 210093 (China); Alberto Achete, Carlos [Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil); Departamento de Engenharia Metalúrgica e de Materiais, Universidade Federal do Rio de janeiro, Rio de Janeiro RJ 21941-972 (Brazil); Medeiros-Ribeiro, Gilberto [Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970 (Brazil); Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States)

2014-05-12

Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.

Phytophthora megakarya and P. palmivora, closely related causal agents of cacao black pod induce similar reactions when infecting pods of a susceptible cacao genotype

Science.gov (United States)

Phytophthora megakarya (Pmeg) and Phytophthora palmivora (Ppal) cause black pod rot of Theobroma cacao. Of these two clade 4 species; Pmeg is more virulent and is displacing Ppal on cacao in many cacao production areas in Africa. To understand the advantages Pmeg has over Ppal, we compared symptom...

Phytophthora megakarya and P. palmivora, closely related causal agents of cacao black pod rot, underwent increases in genome sizes and gene numbers by different mechanisms

Science.gov (United States)

Phytophthora megakarya (Pmeg) and P. palmivora (Ppal) are closely related species causing black pod rot of cacao. While Ppal is a cosmopolitan plant pathogen, cacao is the only known host of importance for Pmeg. Pmeg is more virulent on cacao than Ppal. Therefore, we have sequenced both the Pmeg and...

Phytophthora megakarya and Phytophthora palmivora, Closely Related Causal Agents of Cacao Black Pod Rot, Underwent Increases in Genome Sizes and Gene Numbers by Different Mechanisms

Science.gov (United States)

Ali, Shahin S.; Shao, Jonathan; Lary, David J.; Kronmiller, Brent A.; Shen, Danyu; Strem, Mary D.; Amoako-Attah, Ishmael; Akrofi, Andrew Yaw; Begoude, B.A. Didier; ten Hoopen, G. Martijn; Coulibaly, Klotioloma; Kebe, Boubacar Ismaël; Melnick, Rachel L.; Guiltinan, Mark J.; Tyler, Brett M.; Meinhardt, Lyndel W.

2017-01-01

Phytophthora megakarya (Pmeg) and Phytophthora palmivora (Ppal) are closely related species causing cacao black pod rot. Although Ppal is a cosmopolitan pathogen, cacao is the only known host of economic importance for Pmeg. Pmeg is more virulent on cacao than Ppal. We sequenced and compared the Pmeg and Ppal genomes and identified virulence-related putative gene models (PGeneM) that may be responsible for their differences in host specificities and virulence. Pmeg and Ppal have estimated genome sizes of 126.88 and 151.23 Mb and PGeneM numbers of 42,036 and 44,327, respectively. The evolutionary histories of Pmeg and Ppal appear quite different. Postspeciation, Ppal underwent whole-genome duplication whereas Pmeg has undergone selective increases in PGeneM numbers, likely through accelerated transposable element-driven duplications. Many PGeneMs in both species failed to match transcripts and may represent pseudogenes or cryptic genetic reservoirs. Pmeg appears to have amplified specific gene families, some of which are virulence-related. Analysis of mycelium, zoospore, and in planta transcriptome expression profiles using neural network self-organizing map analysis generated 24 multivariate and nonlinear self-organizing map classes. Many members of the RxLR, necrosis-inducing phytophthora protein, and pectinase genes families were specifically induced in planta. Pmeg displays a diverse virulence-related gene complement similar in size to and potentially of greater diversity than Ppal but it remains likely that the specific functions of the genes determine each species’ unique characteristics as pathogens. PMID:28186564

Displacement Talbot lithography: an alternative technique to fabricate nanostructured metamaterials

Science.gov (United States)

Le Boulbar, E. D.; Chausse, P. J. P.; Lis, S.; Shields, P. A.

2017-06-01

Nanostructured materials are essential for many recent electronic, magnetic and optical devices. Lithography is the most common step used to fabricate organized and well calibrated nanostructures. However, feature sizes less than 200 nm usually require access to deep ultraviolet photolithography, e-beam lithography or soft lithography (nanoimprinting), which are either expensive, have low-throughput or are sensitive to defects. Low-cost, high-throughput and low-defect-density techniques are therefore of interest for the fabrication of nanostructures. In this study, we investigate the potential of displacement Talbot lithography for the fabrication of specific structures of interest within plasmonic and metamaterial research fields. We demonstrate that nanodash arrays and `fishnet'-like structures can be fabricated by using a double exposure of two different linear grating phase masks. Feature sizes can be tuned by varying the exposure doses. Such lithography has been used to fabricate metallic `fishnet'-like structures using a lift-off technique. This proof of principle paves the way to a low-cost, high-throughput, defect-free and large-scale technique for the fabrication of structures that could be useful for metamaterial and plasmonic metasurfaces. With the development of deep ultraviolet displacement Talbot lithography, the feature dimensions could be pushed lower and used for the fabrication of optical metamaterials in the visible range.

Low cost ESR based X-ray beamline for lithography experimentation

Energy Technology Data Exchange (ETDEWEB)

Kovacs, S.; Doumas, A.; Truncale, M. (Grumman Corp., Bethpage, NY (United States). Space and Electronics Div.)

1992-08-01

Any application of the electron storage ring (ESR) based X-ray lithography technology requires an X-ray radiation transport system to transfer the synchrotron radiation into a spectrum defined by the lithography process requirements. Structure of this transport system (i.e. the beamline) depends on the nature of the application. In this paper a beamline conceptual design will be discussed. The beamline is intended for the developmment of X-ray lithography technology. (orig.).

Interference Lithography for Vertical Photovoltaics

Science.gov (United States)

Balls, Amy; Pei, Lei; Kvavle, Joshua; Sieler, Andrew; Schultz, Stephen; Linford, Matthew; Vanfleet, Richard; Davis, Robert

2009-10-01

We are exploring low cost approaches for fabricating three dimensional nanoscale structures. These vertical structures could significantly improve the efficiency of devices made from low cost photovoltaic materials. The nanoscale vertical structure provides a way to increase optical absorption in thin photovoltaic films without increasing the electronic carrier separation distance. The target structure is a high temperature transparent template with a dense array of holes on a 400 - 600 nm pitch fabricated by a combination of interference lithography and nanoembossing. First a master was fabricated using ultraviolet light interference lithography and the pattern was transferred into a silicon wafer master by silicon reactive ion etching. Embossing studies were performed with the master on several high temperature polymers.

Reverse-contact UV nanoimprint lithography for multilayered structure fabrication

International Nuclear Information System (INIS)

Kehagias, N; Reboud, V; Chansin, G; Zelsmann, M; Jeppesen, C; Schuster, C; Kubenz, M; Reuther, F; Gruetzner, G; Torres, C M Sotomayor

2007-01-01

In this paper, we report results on a newly developed nanofabrication technique, namely reverse-contact UV nanoimprint lithography. This technique is a combination of nanoimprint lithography and contact printing lithography. In this process, a lift-off resist and a UV cross-linkable polymer are spin-coated successively onto a patterned UV mask-mould. These thin polymer films are then transferred from the mould to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light. After separation of the mould and the substrate, the unexposed polymer areas are dissolved in a developer solution leaving behind the negative features of the original stamp. This method delivers resist pattern transfer without a residual layer, thereby rending unnecessary the etching steps typically needed in the imprint lithography techniques for three-dimensional patterning. Three-dimensional woodpile-like structures were successfully fabricated with this new technique

Lithography for enabling advances in integrated circuits and devices.

Science.gov (United States)

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Compact synchrotron radiation depth lithography facility

Science.gov (United States)

Knüppel, O.; Kadereit, D.; Neff, B.; Hormes, J.

1992-01-01

X-ray depth lithography allows the fabrication of plastic microstructures with heights of up to 1 mm but with the smallest possible lateral dimensions of about 1 μm. A resist is irradiated with ``white'' synchrotron radiation through a mask that is partially covered with x-ray absorbing microstructures. The plastic microstructure is then obtained by a subsequent chemical development of the irradiated resist. In order to irradiate a reasonably large resist area, the mask and the resist have to be ``scanned'' across the vertically thin beam of the synchrotron radiation. A flexible, nonexpensive and compact scanner apparatus has been built for x-ray depth lithography at the beamline BN1 at ELSA (the 3.5 GeV Electron Stretcher and Accelerator at the Physikalisches Institut of Bonn University). Measurements with an electronic water level showed that the apparatus limits the scanner-induced structure precision to not more than 0.02 μm. The whole apparatus is installed in a vacuum chamber thus allowing lithography under different process gases and pressures.

Workshop on compact storage ring technology: applications to lithography

International Nuclear Information System (INIS)

1986-01-01

Project planning in the area of x-ray lithography is discussed. Three technologies that are emphasized are the light source, the lithographic technology, and masking technology. The needs of the semiconductor industry in the lithography area during the next decade are discussed, particularly as regards large scale production of high density dynamic random access memory devices. Storage ring parameters and an overall exposure tool for x-ray lithography are addressed. Competition in this area of technology from Germany and Japan is discussed briefly. The design of a storage ring is considered, including lattice design, magnets, and beam injection systems

Comparisons of coded aperture imaging using various apertures and decoding methods

International Nuclear Information System (INIS)

Chang, L.T.; Macdonald, B.; Perez-Mendez, V.

1976-07-01

The utility of coded aperture γ camera imaging of radioisotope distributions in Nuclear Medicine is in its ability to give depth information about a three dimensional source. We have calculated imaging with Fresnel zone plate and multiple pinhole apertures to produce coded shadows and reconstruction of these shadows using correlation, Fresnel diffraction, and Fourier transform deconvolution. Comparisons of the coded apertures and decoding methods are made by evaluating their point response functions both for in-focus and out-of-focus image planes. Background averages and standard deviations were calculated. In some cases, background subtraction was made using combinations of two complementary apertures. Results using deconvolution reconstruction for finite numbers of events are also given

Applications of Cold Cathode PIG Ion Source in Lithography

International Nuclear Information System (INIS)

Bassal, N.I.

2012-01-01

The cold cathode Penning ion source (PIG) of axial type could be modified to produce ion and electron beam with a considerable amount to use it in the lithography process. Lithography is a new applications of ion/electron beam at which one can use the ion/ or electron beam as a pencil to write and draw on a metal surface. The electron beam takes 1/3 the time needed for ion beam to make good picture. So that with the help of ion/or electron beam lithography one can mark tools, parts, instruments, and equipment with names, numbers, designs, trademark or brand name in few seconds. It is an easy process, quick and an inexpensive method. Firstly, operating characteristics of this ion source is studied. Lithography application of ion source with optimum conditions is done. Later, the hardness and the tensile strength is measured and each of them increases with increasing time

Optical characterisation of photonic wire and photonic crystal waveguides fabricated using nanoimprint lithography

DEFF Research Database (Denmark)

Borel, Peter Ingo; Frandsen, Lars Hagedorn; Lavrinenko, Andrei

2006-01-01

We have characterised photonic-crystal and photonic-wire waveguides fabricated by thermal nanoimprint lithography. The structures, with feature sizes down below 20 nm, are benchmarked against similar structures defined by direct electron beam lithography.......We have characterised photonic-crystal and photonic-wire waveguides fabricated by thermal nanoimprint lithography. The structures, with feature sizes down below 20 nm, are benchmarked against similar structures defined by direct electron beam lithography....

Aperture Photometry Tool

Science.gov (United States)

Laher, Russ R.; Gorjian, Varoujan; Rebull, Luisa M.; Masci, Frank J.; Fowler, John W.; Helou, George; Kulkarni, Shrinivas R.; Law, Nicholas M.

2012-07-01

Aperture Photometry Tool (APT) is software for astronomers and students interested in manually exploring the photometric qualities of astronomical images. It is a graphical user interface (GUI) designed to allow the image data associated with aperture photometry calculations for point and extended sources to be visualized and, therefore, more effectively analyzed. The finely tuned layout of the GUI, along with judicious use of color-coding and alerting, is intended to give maximal user utility and convenience. Simply mouse-clicking on a source in the displayed image will instantly draw a circular or elliptical aperture and sky annulus around the source and will compute the source intensity and its uncertainty, along with several commonly used measures of the local sky background and its variability. The results are displayed and can be optionally saved to an aperture-photometry-table file and plotted on graphs in various ways using functions available in the software. APT is geared toward processing sources in a small number of images and is not suitable for bulk processing a large number of images, unlike other aperture photometry packages (e.g., SExtractor). However, APT does have a convenient source-list tool that enables calculations for a large number of detections in a given image. The source-list tool can be run either in automatic mode to generate an aperture photometry table quickly or in manual mode to permit inspection and adjustment of the calculation for each individual detection. APT displays a variety of useful graphs with just the push of a button, including image histogram, x and y aperture slices, source scatter plot, sky scatter plot, sky histogram, radial profile, curve of growth, and aperture-photometry-table scatter plots and histograms. APT has many functions for customizing the calculations, including outlier rejection, pixel “picking” and “zapping,” and a selection of source and sky models. The radial-profile-interpolation source

Protein assay structured on paper by using lithography

Science.gov (United States)

Wilhelm, E.; Nargang, T. M.; Al Bitar, W.; Waterkotte, B.; Rapp, B. E.

2015-03-01

There are two main challenges in producing a robust, paper-based analytical device. The first one is to create a hydrophobic barrier which unlike the commonly used wax barriers does not break if the paper is bent. The second one is the creation of the (bio-)specific sensing layer. For this proteins have to be immobilized without diminishing their activity. We solve both problems using light-based fabrication methods that enable fast, efficient manufacturing of paper-based analytical devices. The first technique relies on silanization by which we create a flexible hydrophobic barrier made of dimethoxydimethylsilane. The second technique demonstrated within this paper uses photobleaching to immobilize proteins by means of maskless projection lithography. Both techniques have been tested on a classical lithography setup using printed toner masks and on a lithography system for maskless lithography. Using these setups we could demonstrate that the proposed manufacturing techniques can be carried out at low costs. The resolution of the paper-based analytical devices obtained with static masks was lower due to the lower mask resolution. Better results were obtained using advanced lithography equipment. By doing so we demonstrated, that our technique enables fabrication of effective hydrophobic boundary layers with a thickness of only 342 μm. Furthermore we showed that flourescine-5-biotin can be immobilized on the non-structured paper and be employed for the detection of streptavidinalkaline phosphatase. By carrying out this assay on a paper-based analytical device which had been structured using the silanization technique we proofed biological compatibility of the suggested patterning technique.

Parameters for HL-LHC aperture calculations and comparison with aperture measurements

CERN Document Server

Bruce, R; Fartoukh, S; Giovannozzi, M; Redaelli, S; Tomas, R; Wenninger, J

2014-01-01

When β∗ is squeezed to smaller values in the LHC, the beam size in the inner triplet increases so that the aperture risks to be exposed to unwanted beam losses. A 2D calculation model was used during the design stage to study the aperture margins, both there and at other potential bottlenecks. Based on assumptions on orbit and optics errors, as well as mechanical tolerances, it gives the available aperture in units of the RMS beam size, which can be compared with what can be protected by the collimation system. During the LHC Run I in 2010-2013, several of the error tolerances have been found smaller than the design assumptions. Furthermore, the aperture has been measured with beam several times and the results are compatible with a very well aligned machine, with results close to the design values. In this report, we therefore review the assumptions in the model and propose an updated set of input parameters to be used for aperture calculations at top energy in HL-LHC. The new parameter set is based on th...

Investigation of the AZ 5214E photoresist by the laser interference, EBDW and NSOM lithographies

Energy Technology Data Exchange (ETDEWEB)

Škriniarová, J., E-mail: jaroslava.skriniarova@stuba.sk [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia); Pudiš, D. [Department of Physics, University of Žilina, Žilina (Slovakia); Andok, R. [Department of E-Beam Lithography, Institute of Informatics, Slovak Academy of Sciences, Bratislava (Slovakia); Lettrichová, I. [Department of Physics, University of Žilina, Žilina (Slovakia); Uherek, F. [Institute of Electronics and Photonics, Slovak University of Technology, Bratislava (Slovakia)

2017-02-15

Highlights: • Applicability of the AZ 5214E photoresist for three different lithographies. • Useful for the fabrication of 1D and 2D periodic and irregular structures. • 2D structures with 260 nm period achieved by the laser interference lithography. • Structures with period below 500 nm achieved with the e-beam direct-write lithography. • Holes of 270 nm diameter made by the near-field scanning optical microscopy lithography. - Abstract: In this paper we show a comparison of chosen lithographies used for the AZ 5214E photoresist, which is normally UV sensitive but has also been investigated for its sensitivity to e-beam exposure. Three lithographies, the E-Beam Direct Write lithography (EBDW), laser Interference Lithography (IL) and the non-contact Near-field Scanning Optical Microscopy (NSOM) lithography, are discussed here and the results on exposed arrays of simple patterns are shown. With the EBDW and IL we achieved periods of the structures around half-micron, and we demonstrate attainability of dimensions smaller or comparable than usually achieved by a standard optical photolithography with the investigated photoresist. With the non-contact NSOM lithography structures with periods slightly above a micron were achieved.

32nm 1-D regular pitch SRAM bitcell design for interference-assisted lithography

Science.gov (United States)

Greenway, Robert T.; Jeong, Kwangok; Kahng, Andrew B.; Park, Chul-Hong; Petersen, John S.

2008-10-01

As optical lithography advances into the 45nm technology node and beyond, new manufacturing-aware design requirements have emerged. We address layout design for interference-assisted lithography (IAL), a double exposure method that combines maskless interference lithography (IL) and projection lithography (PL); cf. hybrid optical maskless lithography (HOMA) in [2] and [3]. Since IL can generate dense but regular pitch patterns, a key challenge to deployment of IAL is the conversion of existing designs to regular-linewidth, regular-pitch layouts. In this paper, we propose new 1-D regular pitch SRAM bitcell layouts which are amenable to IAL. We evaluate the feasibility of our bitcell designs via lithography simulations and circuit simulations, and confirm that the proposed bitcells can be successfully printed by IAL and that their electrical characteristics are comparable to those of existing bitcells.

Nanoimprint lithography for microfluidics manufacturing

Science.gov (United States)

Kreindl, Gerald; Matthias, Thorsten

2013-12-01

The history of imprint technology as lithography method for pattern replication can be traced back to 1970's but the most significant progress has been made by the research group of S. Chou in the 1990's. Since then, it has become a popular technique with a rapidly growing interest from both research and industrial sides and a variety of new approaches have been proposed along the mainstream scientific advances. Nanoimprint lithography (NIL) is a novel method for the fabrication of micro/nanometer scale patterns with low cost, high throughput and high resolution. Unlike traditional optical lithographic approaches, which create pattern through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional lithographic techniques. The ability to fabricate structures from the micro- to the nanoscale with high precision in a wide variety of materials is of crucial importance to the advancement of micro- and nanotechnology and the biotech- sciences as a whole and will be discussed in this paper. Nanoimprinting can not only create resist patterns, as in lithography, but can also imprint functional device structures in various polymers, which can lead to a wide range of applications in electronics, photonics, data storage, and biotechnology.

Roll-to-roll UV imprint lithography for flexible electronics

NARCIS (Netherlands)

Maury, P.; Turkenburg, D.H.; Stroeks, N.; Giesen, P.; Barbu, I.; Meinders, E.R.; Bremen, A. van; Iosad, N.; Werf, R. van der; Onvlee, H.

2011-01-01

We propose a roll-to-roll UV imprint lithography tool as a way to pattern flexible PET foil with µm-resolution. As a way to overcome dimensional instability of the foil and its effect on overlay, a self-align approach was investigated, that permits to make several layers in a single lithography

Detailed IR aperture measurements

CERN Document Server

Bruce, Roderik; Garcia Morales, Hector; Giovannozzi, Massimo; Hermes, Pascal Dominik; Mirarchi, Daniele; Quaranta, Elena; Redaelli, Stefano; Rossi, Carlo; Skowronski, Piotr Krzysztof; Wretborn, Sven Joel; CERN. Geneva. ATS Department

2016-01-01

MD 1673 was carried out on October 5 2016, in order to investigate in more detail the available aperture in the LHC high-luminosity insertions at 6.5 TeV and β∗=40 cm. Previous aperture measurements in 2016 during commissioning had shown that the available aperture is at the edge of protection, and that the aperture bottleneck at β∗=40 cm in certain cases is found in the separation plane instead of in the crossing plane. Furthermore, the bottlenecks were consistently found in close to the upstream end of Q3 on the side of the incoming beam, and not in Q2 on the outgoing beam as expected from calculations. Therefore, this MD aimed at measuring IR1 and IR5 separately (at 6.5 TeV and β∗=40 cm, for 185 µrad half crossing angle), to further localize the bottlenecks longitudinally using newly installed BLMs, investigate the difference in aperture between Q2 and Q3, and to see if any aperture can be gained using special orbit bumps.

Phytophthora megakarya and P. palmivora, Causal Agents of Black Pod Rot, Induce Similar Plant Defense Responses Late during Infection of Susceptible Cacao Pods

Science.gov (United States)

Ali, Shahin S.; Shao, Jonathan; Lary, David J.; Strem, Mary D.; Meinhardt, Lyndel W.; Bailey, Bryan A.

2017-01-01

Phytophthora megakarya (Pmeg) and Phytophthora palmivora (Ppal) cause black pod rot of Theobroma cacao L. (cacao). Of these two clade 4 species, Pmeg is more virulent and is displacing Ppal in many cacao production areas in Africa. Symptoms and species specific sporangia production were compared when the two species were co-inoculated onto pod pieces in staggered 24 h time intervals. Pmeg sporangia were predominantly recovered from pod pieces with unwounded surfaces even when inoculated 24 h after Ppal. On wounded surfaces, sporangia of Ppal were predominantly recovered if the two species were simultaneously applied or Ppal was applied first but not if Pmeg was applied first. Pmeg demonstrated an advantage over Ppal when infecting un-wounded surfaces while Ppal had the advantage when infecting wounded surfaces. RNA-Seq was carried out on RNA isolated from control and Pmeg and Ppal infected pod pieces 3 days post inoculation to assess their abilities to alter/suppress cacao defense. Expression of 4,482 and 5,264 cacao genes was altered after Pmeg and Ppal infection, respectively, with most genes responding to both species. Neural network self-organizing map analyses separated the cacao RNA-Seq gene expression profiles into 24 classes, 6 of which were largely induced in response to infection. Using KEGG analysis, subsets of genes composing interrelated pathways leading to phenylpropanoid biosynthesis, ethylene and jasmonic acid biosynthesis and action, plant defense signal transduction, and endocytosis showed induction in response to infection. A large subset of genes encoding putative Pr-proteins also showed differential expression in response to infection. A subset of 36 cacao genes was used to validate the RNA-Seq expression data and compare infection induced gene expression patterns in leaves and wounded and unwounded pod husks. Expression patterns between RNA-Seq and RT-qPCR were generally reproducible. The level and timing of altered gene expression was

Nano lithography

CERN Document Server

Landis, Stefan

2013-01-01

Lithography is an extremely complex tool - based on the concept of "imprinting" an original template version onto mass output - originally using relatively simple optical exposure, masking, and etching techniques, and now extended to include exposure to X-rays, high energy UV light, and electron beams - in processes developed to manufacture everyday products including those in the realms of consumer electronics, telecommunications, entertainment, and transportation, to name but a few. In the last few years, researchers and engineers have pushed the envelope of fields including optics, physics,

Fabrication of Monolithic Bridge Structures by Vacuum-Assisted Capillary-Force Lithography

KAUST Repository

Kwak, Rhokyun; Jeong, Hoon Eui; Suh, Kahp Y.

2009-01-01

Monolithic bridge structures were fabricated by using capillary-force lithography (CFL), which was developed for patterning polymers over a large area by combining essential features of nanoimprint lithography and capillarity. A patterned soft mold

Hard-tip, soft-spring lithography.

Science.gov (United States)

Shim, Wooyoung; Braunschweig, Adam B; Liao, Xing; Chai, Jinan; Lim, Jong Kuk; Zheng, Gengfeng; Mirkin, Chad A

2011-01-27

Nanofabrication strategies are becoming increasingly expensive and equipment-intensive, and consequently less accessible to researchers. As an alternative, scanning probe lithography has become a popular means of preparing nanoscale structures, in part owing to its relatively low cost and high resolution, and a registration accuracy that exceeds most existing technologies. However, increasing the throughput of cantilever-based scanning probe systems while maintaining their resolution and registration advantages has from the outset been a significant challenge. Even with impressive recent advances in cantilever array design, such arrays tend to be highly specialized for a given application, expensive, and often difficult to implement. It is therefore difficult to imagine commercially viable production methods based on scanning probe systems that rely on conventional cantilevers. Here we describe a low-cost and scalable cantilever-free tip-based nanopatterning method that uses an array of hard silicon tips mounted onto an elastomeric backing. This method-which we term hard-tip, soft-spring lithography-overcomes the throughput problems of cantilever-based scanning probe systems and the resolution limits imposed by the use of elastomeric stamps and tips: it is capable of delivering materials or energy to a surface to create arbitrary patterns of features with sub-50-nm resolution over centimetre-scale areas. We argue that hard-tip, soft-spring lithography is a versatile nanolithography strategy that should be widely adopted by academic and industrial researchers for rapid prototyping applications.

Electron Beam Lithography for nano-patterning

DEFF Research Database (Denmark)

Greibe, Tine; Anhøj, Thomas Aarøe; Khomtchenko, Elena

2014-01-01

in a polymer. Electron beam lithography is a suitable method for nano-sized production, research, or development of semiconductor components on a low-volume level. Here, we present electron beam lithography available at DTU Danchip. We expertize a JEOL 9500FZ with electrons accelerated to an energy of 100ke......, the room temperature is controlled to an accuracy of 0.1 degrees in order to minimize the thermally induced drift of the beam during pattern writing. We present process results in a standard positive tone resist and pattern transfer through etch to a Silicon substrate. Even though the electron beam...... of electrons in the substrate will influence the patterning. We present solutions to overcome these obstacles....

Electron-beam lithography

International Nuclear Information System (INIS)

Harriott, L.; Liddle, A.

1997-01-01

As part of a commemorative series of articles to mark the hundredth anniversary of the discovery of the electron, this article describes the use of electron beams to write features on silicon wafers. Recent advances in electron beam lithography, as it is known, could enable this technology to be used for the mass manufacture of silicon chips. The validation of space-charge optimization and evaluation of printing techniques is underway. (UK)

Hybrid UV Lithography for 3D High-Aspect-Ratio Microstructures

Energy Technology Data Exchange (ETDEWEB)

Park, Sungmin; Nam, Gyungmok; Kim, Jonghun; Yoon, Sang-Hee [Inha Univ, Incheon (Korea, Republic of)

2016-08-15

Three-dimensional (3D) high-aspect-ratio (HAR) microstructures for biomedical applications (e.g., microneedle, microadhesive, etc.) are microfabricated using the hybrid ultraviolet (UV) lithography in which inclined, rotational, and reverse-side UV exposure processes are combined together. The inclined and rotational UV exposure processes are intended to fabricate tapered axisymmetric HAR microstructures; the reverse-side UV exposure process is designed to sharpen the end tip of the microstructures by suppressing the UV reflection on a bottom substrate which is inevitable in conventional UV lithography. Hybrid UV lithography involves fabricating 3D HAR microstructures with an epoxy-based negative photoresist, SU-8, using our customized UV exposure system. The effects of hybrid UV lithography parameters on the geometry of the 3D HAR microstructures (aspect ratio, radius of curvature of the end tip, etc.) are measured. The dependence of the end-tip shape on SU-8 soft-baking condition is also discussed.

Hybrid UV Lithography for 3D High-Aspect-Ratio Microstructures

International Nuclear Information System (INIS)

Park, Sungmin; Nam, Gyungmok; Kim, Jonghun; Yoon, Sang-Hee

2016-01-01

Three-dimensional (3D) high-aspect-ratio (HAR) microstructures for biomedical applications (e.g., microneedle, microadhesive, etc.) are microfabricated using the hybrid ultraviolet (UV) lithography in which inclined, rotational, and reverse-side UV exposure processes are combined together. The inclined and rotational UV exposure processes are intended to fabricate tapered axisymmetric HAR microstructures; the reverse-side UV exposure process is designed to sharpen the end tip of the microstructures by suppressing the UV reflection on a bottom substrate which is inevitable in conventional UV lithography. Hybrid UV lithography involves fabricating 3D HAR microstructures with an epoxy-based negative photoresist, SU-8, using our customized UV exposure system. The effects of hybrid UV lithography parameters on the geometry of the 3D HAR microstructures (aspect ratio, radius of curvature of the end tip, etc.) are measured. The dependence of the end-tip shape on SU-8 soft-baking condition is also discussed

APT: Aperture Photometry Tool

Science.gov (United States)

Laher, Russ

2012-08-01

Aperture Photometry Tool (APT) is software for astronomers and students interested in manually exploring the photometric qualities of astronomical images. It has a graphical user interface (GUI) which allows the image data associated with aperture photometry calculations for point and extended sources to be visualized and, therefore, more effectively analyzed. Mouse-clicking on a source in the displayed image draws a circular or elliptical aperture and sky annulus around the source and computes the source intensity and its uncertainty, along with several commonly used measures of the local sky background and its variability. The results are displayed and can be optionally saved to an aperture-photometry-table file and plotted on graphs in various ways using functions available in the software. APT is geared toward processing sources in a small number of images and is not suitable for bulk processing a large number of images, unlike other aperture photometry packages (e.g., SExtractor). However, APT does have a convenient source-list tool that enables calculations for a large number of detections in a given image. The source-list tool can be run either in automatic mode to generate an aperture photometry table quickly or in manual mode to permit inspection and adjustment of the calculation for each individual detection. APT displays a variety of useful graphs, including image histogram, and aperture slices, source scatter plot, sky scatter plot, sky histogram, radial profile, curve of growth, and aperture-photometry-table scatter plots and histograms. APT has functions for customizing calculations, including outlier rejection, pixel “picking” and “zapping,” and a selection of source and sky models. The radial-profile-interpolation source model, accessed via the radial-profile-plot panel, allows recovery of source intensity from pixels with missing data and can be especially beneficial in crowded fields.

Mastering Apple Aperture

CERN Document Server

Fitzgerald, Thomas

2013-01-01

Written in a conversational style, the author will share his knowledge on advanced Aperture topics with detailed discussions of advanced topics, the theory behind some of those topics and lots of hints and tips for ways to improve your workflow.Photographer's who have a basic understanding of Aperture

Aperture area measurement facility

Data.gov (United States)

Federal Laboratory Consortium — NIST has established an absolute aperture area measurement facility for circular and near-circular apertures use in radiometric instruments. The facility consists of...

Solvent-vapor-assisted imprint lithography

NARCIS (Netherlands)

Voicu, Nicoleta E.; Ludwigs, Sabine; Crossland, Edward J. W.; Andrew, Piers; Steiner, Ullrich

2007-01-01

Sub-micrometer features are replicated into high-molecular-weight polymer resists by using solvent-assisted nanoimprint lithography (see figure). By swelling the polymer in a controlled solvent-vapor atmosphere, millibar pressures and ambient temperatures are sufficient to achieve high-fidelity

Electron beam lithography

International Nuclear Information System (INIS)

Harriott, L.; Liddle, A.

1997-01-01

As part of a commemorative series of articles to mark the hundredth anniversary of the discovery of the electron, this article describes the use of electron beams to write features on silicon wafers. Recent advances in electron beam lithography, as it is known, could enable this technology to be used for the mass manufacture of silicon chips. The validation of space-charge optimization and evaluation of printing techniques is underway. 5 figs

Mask-induced aberration in EUV lithography

Science.gov (United States)

Nakajima, Yumi; Sato, Takashi; Inanami, Ryoichi; Nakasugi, Tetsuro; Higashiki, Tatsuhiko

2009-04-01

We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

Image-projection ion-beam lithography

International Nuclear Information System (INIS)

Miller, P.A.

1989-01-01

Image-projection ion-beam lithography is an attractive alternative for submicron patterning because it may provide high throughput; it uses demagnification to gain advantages in reticle fabrication, inspection, and lifetime; and it enjoys the precise deposition characteristics of ions which cause essentially no collateral damage. This lithographic option involves extracting low-mass ions (e.g., He + ) from a plasma source, transmitting the ions at low voltage through a stencil reticle, and then accelerating and focusing the ions electrostatically onto a resist-coated wafer. While the advantages of this technology have been demonstrated experimentally by the work of IMS (Austria), many difficulties still impede extension of the technology to the high-volume production of microelectronic devices. We report a computational study of a lithography system designed to address problem areas in field size, telecentricity, and chromatic and geometric aberration. We present a novel ion-column-design approach and conceptual ion-source and column designs which address these issues. We find that image-projection ion-beam technology should in principle meet high-volume-production requirements. The technical success of our present relatively compact-column design requires that a glow-discharge-based ion source (or equivalent cold source) be developed and that moderate further improvement in geometric aberration levels be obtained. Our system requires that image predistortion be employed during reticle fabrication to overcome distortion due to residual image nonlinearity and space-charge forces. This constitutes a software data preparation step, as do correcting for distortions in electron lithography columns and performing proximity-effect corrections. Areas needing further fundamental work are identified

Tissue Harmonic Synthetic Aperture Imaging

DEFF Research Database (Denmark)

Rasmussen, Joachim

The main purpose of this PhD project is to develop an ultrasonic method for tissue harmonic synthetic aperture imaging. The motivation is to advance the field of synthetic aperture imaging in ultrasound, which has shown great potentials in the clinic. Suggestions for synthetic aperture tissue...... system complexity compared to conventional synthetic aperture techniques. In this project, SASB is sought combined with a pulse inversion technique for 2nd harmonic tissue harmonic imaging. The advantages in tissue harmonic imaging (THI) are expected to further improve the image quality of SASB...

Survey of coded aperture imaging

International Nuclear Information System (INIS)

Barrett, H.H.

1975-01-01

The basic principle and limitations of coded aperture imaging for x-ray and gamma cameras are discussed. Current trends include (1) use of time varying apertures, (2) use of ''dilute'' apertures with transmission much less than 50%, and (3) attempts to derive transverse tomographic sections, unblurred by other planes, from coded images

The partial coherence modulation transfer function in testing lithography lens

Science.gov (United States)

Huang, Jiun-Woei

2018-03-01

Due to the lithography demanding high performance in projection of semiconductor mask to wafer, the lens has to be almost free in spherical and coma aberration, thus, in situ optical testing for diagnosis of lens performance has to be established to verify the performance and to provide the suggesting for further improvement of the lens, before the lens has been build and integrated with light source. The measurement of modulation transfer function of critical dimension (CD) is main performance parameter to evaluate the line width of semiconductor platform fabricating ability for the smallest line width of producing tiny integrated circuits. Although the modulation transfer function (MTF) has been popularly used to evaluation the optical system, but in lithography, the contrast of each line-pair is in one dimension or two dimensions, analytically, while the lens stand along in the test bench integrated with the light source coherent or near coherent for the small dimension near the optical diffraction limit, the MTF is not only contributed by the lens, also by illumination of platform. In the study, the partial coherence modulation transfer function (PCMTF) for testing a lithography lens is suggested by measuring MTF in the high spatial frequency of in situ lithography lens, blended with the illumination of partial and in coherent light source. PCMTF can be one of measurement to evaluate the imperfect lens of lithography lens for further improvement in lens performance.

Realization of a diamond based high density multi electrode array by means of Deep Ion Beam Lithography

International Nuclear Information System (INIS)

Picollo, F.; Battiato, A.; Bernardi, E.; Boarino, L.; Enrico, E.; Forneris, J.; Gatto Monticone, D.; Olivero, P.

2015-01-01

In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an optically transparent and highly insulating matrix. The proposed fabrication process consists in the combination of Deep Ion Beam Lithography (DIBL) and Focused Ion Beam (FIB) milling. FIB micromachining is employed to define micro-apertures in the contact masks consisting of thin (<10 μm) deposited metal layers through which ions are implanted in the sample. A prototypical single-cell biosensor was realized with the above described technique. The biosensor has 16 independent electrodes converging inside a circular area of 20 μm diameter (typical neuroendocrine cells size) for the simultaneous recording of amperometric signals

EB and EUV lithography using inedible cellulose-based biomass resist material

Science.gov (United States)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2016-03-01

The validity of our approach of inedible cellulose-based resist material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass resist material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass resist material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass resist material.

Synchrotron radiation sources and condensers for projection x-ray lithography

International Nuclear Information System (INIS)

Murphy, J.B.; MacDowell, A.A.; White, D.L.; Wood, O.R. II

1992-01-01

The design requirements for a compact electron storage ring that could be used as a soft x-ray source for projection lithography are discussed. The design concepts of the x-ray optics that are required to collect and condition the radiation in divergence, uniformity and direction to properly illuminate the mask and the particular x-ray projection camera used are discussed. Preliminary designs for an entire soft x-ray projection lithography system using an electron storage ring as a soft X-ray source are presented. It is shown that by combining the existing technology of storage rings with large collection angle condensers, a powerful and reliable source of 130 Angstrom photons for production line projection x-ray lithography is possible

Interference lithography for optical devices and coatings

Science.gov (United States)

Juhl, Abigail Therese

Interference lithography can create large-area, defect-free nanostructures with unique optical properties. In this thesis, interference lithography will be utilized to create photonic crystals for functional devices or coatings. For instance, typical lithographic processing techniques were used to create 1, 2 and 3 dimensional photonic crystals in SU8 photoresist. These structures were in-filled with birefringent liquid crystal to make active devices, and the orientation of the liquid crystal directors within the SU8 matrix was studied. Most of this thesis will be focused on utilizing polymerization induced phase separation as a single-step method for fabrication by interference lithography. For example, layered polymer/nanoparticle composites have been created through the one-step two-beam interference lithographic exposure of a dispersion of 25 and 50 nm silica particles within a photopolymerizable mixture at a wavelength of 532 nm. In the areas of constructive interference, the monomer begins to polymerize via a free-radical process and concurrently the nanoparticles move into the regions of destructive interference. The holographic exposure of the particles within the monomer resin offers a single-step method to anisotropically structure the nanoconstituents within a composite. A one-step holographic exposure was also used to fabricate self-healing coatings that use water from the environment to catalyze polymerization. Polymerization induced phase separation was used to sequester an isocyanate monomer within an acrylate matrix. Due to the periodic modulation of the index of refraction between the monomer and polymer, the coating can reflect a desired wavelength, allowing for tunable coloration. When the coating is scratched, polymerization of the liquid isocyanate is catalyzed by moisture in air; if the indices of the two polymers are matched, the coatings turn transparent after healing. Interference lithography offers a method of creating multifunctional self

The application of synchrotron radiation to X-ray lithography

International Nuclear Information System (INIS)

Spiller, E.; Eastman, D.E.; Feder, R.; Grobman, W.D.; Gudat, W.; Topalian, J.

1976-06-01

Synchrotron radiation from the German electron synchrotron DESY in Hamburg has been used for X-ray lithograpgy. Replications of different master patterns (for magnetic bubble devices, fresnel zone plates, etc.) were made using various wavelengths and exposures. High quality lines down to 500 A wide have been reproduced using very soft X-rays. The sensitivities of X-ray resists have been evaluated over a wide range of exposures. Various critical factors (heating, radiation damage, etc.) involved with X-ray lithography using synchrotron radiation have been studied. General considerations of storage ring sources designed as radiation sources for X-ray lithography are discussed, together with a comparison with X-ray tube sources. The general conclusion is that X-ray lithography using synchrotron radiation offers considerable promise as a process for forming high quality sub-micron images with exposure times as short as a few seconds. (orig.) [de

Aperture averaging in strong oceanic turbulence

Science.gov (United States)

Gökçe, Muhsin Caner; Baykal, Yahya

2018-04-01

Receiver aperture averaging technique is employed in underwater wireless optical communication (UWOC) systems to mitigate the effects of oceanic turbulence, thus to improve the system performance. The irradiance flux variance is a measure of the intensity fluctuations on a lens of the receiver aperture. Using the modified Rytov theory which uses the small-scale and large-scale spatial filters, and our previously presented expression that shows the atmospheric structure constant in terms of oceanic turbulence parameters, we evaluate the irradiance flux variance and the aperture averaging factor of a spherical wave in strong oceanic turbulence. Irradiance flux variance variations are examined versus the oceanic turbulence parameters and the receiver aperture diameter are examined in strong oceanic turbulence. Also, the effect of the receiver aperture diameter on the aperture averaging factor is presented in strong oceanic turbulence.

Computer numerical control (CNC) lithography: light-motion synchronized UV-LED lithography for 3D microfabrication

International Nuclear Information System (INIS)

Kim, Jungkwun; Allen, Mark G; Yoon, Yong-Kyu

2016-01-01

This paper presents a computer-numerical-controlled ultraviolet light-emitting diode (CNC UV-LED) lithography scheme for three-dimensional (3D) microfabrication. The CNC lithography scheme utilizes sequential multi-angled UV light exposures along with a synchronized switchable UV light source to create arbitrary 3D light traces, which are transferred into the photosensitive resist. The system comprises a switchable, movable UV-LED array as a light source, a motorized tilt-rotational sample holder, and a computer-control unit. System operation is such that the tilt-rotational sample holder moves in a pre-programmed routine, and the UV-LED is illuminated only at desired positions of the sample holder during the desired time period, enabling the formation of complex 3D microstructures. This facilitates easy fabrication of complex 3D structures, which otherwise would have required multiple manual exposure steps as in the previous multidirectional 3D UV lithography approach. Since it is batch processed, processing time is far less than that of the 3D printing approach at the expense of some reduction in the degree of achievable 3D structure complexity. In order to produce uniform light intensity from the arrayed LED light source, the UV-LED array stage has been kept rotating during exposure. UV-LED 3D fabrication capability was demonstrated through a plurality of complex structures such as V-shaped micropillars, micropanels, a micro-‘hi’ structure, a micro-‘cat’s claw,’ a micro-‘horn,’ a micro-‘calla lily,’ a micro-‘cowboy’s hat,’ and a micro-‘table napkin’ array. (paper)

Functionalized SU-8 patterned with X-ray Lithography

DEFF Research Database (Denmark)

Balslev, Søren; Romanato, F.

2005-01-01

spontaneous emission light source that couples out light normal to the chip plane. In addition we examine the influence of the x-ray irradiation on the fluorescence of thin films of dye doped SU-8. The dye embedded in the SU-8 is optically excited during, characterization by an external light source tuned......In this work we demonstrate the feasibility of x-ray lithography on SU-8 photoresist doped with the laser dye Rhodamine 6G, while retaining the photoactive properties of the embedded dye. Two kinds of structures are fabricated via soft x-ray lithography and characterized: a laser and in amplified...

The LHC dynamic aperture

CERN Document Server

Koutchouk, Jean-Pierre

1999-01-01

In 1996, the expected field errors in the dipoles and quadrupoles yielded a long-term dynamic aperture of some 8sigma at injection. The target was set to 12sigma to account for the limitations of our model (imperfections and dynamics). From scaling laws and tracking, a specification for the field imperfections yielding the target dynamic aperture was deduced. The gap between specification and expected errors is being bridged by i) an improvement of the dipole field quality, ii) a balance between geometric and persistent current errors, iii) additional correction circuits (a3 ,b4 ). With the goal in view, the emphasis has now turned to the sensitivity of the dynamic aperture to the optical parameters.The distortion of the dynamics at the lower amplitudes effectively reached by the particles is minimized by optimizing the distribution of the betatron phase advance. At collision energy, the dynamic aperture is limited by the field imperfections of the low-beta triplets, enhanced by the crossing angle. With corre...

Helium ion lithography principles and performance

NARCIS (Netherlands)

Drift, E. van der; Maas, D.J.

2012-01-01

Recent developments show that Scanning Helium Ion Beam Lithography (SHIBL) with a sub-nanometer beam diameter is a promising alternative fabrication technique for high-resolution nanostructures at high pattern densities. Key principles and critical conditions of the technique are explained. From

Submicron three-dimensional structures fabricated by reverse contact UV nanoimprint lithography

DEFF Research Database (Denmark)

Kehagias, N.; Reboud, Vincent; Chansin, G.

2006-01-01

The fabrication of a three-dimensional multilayered nanostructure is demonstrated with a newly developed nanofabrication technique, namely, reverse contact ultraviolet nanoimprint lithography. This technique is a combination of reverse nanoimprint lithography and contact ultraviolet lithography....... In this process, a UV cross-linkable polymer and a thermoplastic polymer are spin coated onto a patterned hybrid metal-quartz stamp. These thin polymer films are then transferred from the stamp to the substrate by contact at a suitable temperature and pressure. The whole assembly is then exposed to UV light....... After separation of the stamp and the substrate, the unexposed polymer areas are rinsed away with acetone leaving behind the negative features of the original stamp with no residual layer....

DWDM laser arrays fabricated using thermal nanoimprint lithography on Indium Phosphide substrates

DEFF Research Database (Denmark)

Smistrup, K.; Nørregaard, J.; Mironov, A.

2013-01-01

by including a lambda quarter shift at the center of the grating. The need for phase shifts and multiple wavelengths eliminates some lithography methods such as holography. Typically, these lasers are produced by e-beam lithography (EBL). We present a production method based on thermal nanoimprint lithography...... during the imprint process and the narrow temperature window for imprint and separation (80°C and 55°C) ensures minimal issues with thermal mismatch between the InP substrate and the Si stamp. The imprinted InP wafers were processed in NeoPhotonics standard process line to create working lasers...

Large aperture optical switching devices

International Nuclear Information System (INIS)

Goldhar, J.; Henesian, M.A.

1983-01-01

We have developed a new approach to constructing large aperture optical switches for next generation inertial confinement fusion lasers. A transparent plasma electrode formed in low pressure ionized gas acts as a conductive coating to allow the uniform charging of the optical faces of an electro-optic material. In this manner large electric fields can be applied longitudinally to large aperture, high aspect ratio Pockels cells. We propose a four-electrode geometry to create the necessary high conductivity plasma sheets, and have demonstrated fast (less than 10 nsec) switching in a 5x5 cm aperture KD*P Pockels cell with such a design. Detaid modelling of Pockels cell performance with plasma electrodes has been carried out for 15 and 30 cm aperture designs

Plasmonic nanostructures fabricated using nanosphere-lithography, soft-lithography and plasma etching

Directory of Open Access Journals (Sweden)

Manuel R. Gonçalves

2011-08-01

Full Text Available We present two routes for the fabrication of plasmonic structures based on nanosphere lithography templates. One route makes use of soft-lithography to obtain arrays of epoxy resin hemispheres, which, in a second step, can be coated by metal films. The second uses the hexagonal array of triangular structures, obtained by evaporation of a metal film on top of colloidal crystals, as a mask for reactive ion etching (RIE of the substrate. In this way, the triangular patterns of the mask are transferred to the substrate through etched triangular pillars. Making an epoxy resin cast of the pillars, coated with metal films, allows us to invert the structure and obtain arrays of triangular holes within the metal. Both fabrication methods illustrate the preparation of large arrays of nanocavities within metal films at low cost.Gold films of different thicknesses were evaporated on top of hemispherical structures of epoxy resin with different radii, and the reflectance and transmittance were measured for optical wavelengths. Experimental results show that the reflectivity of coated hemispheres is lower than that of coated polystyrene spheres of the same size, for certain wavelength bands. The spectral position of these bands correlates with the size of the hemispheres. In contrast, etched structures on quartz coated with gold films exhibit low reflectance and transmittance values for all wavelengths measured. Low transmittance and reflectance indicate high absorbance, which can be utilized in experiments requiring light confinement.

Imprint lithography: lab curiosity or the real NGL

Science.gov (United States)

Resnick, Douglas J.; Dauksher, William J.; Mancini, David P.; Nordquist, Kevin J.; Bailey, Todd C.; Johnson, Stephen C.; Stacey, Nicholas A.; Ekerdt, John G.; Willson, C. Grant; Sreenivasan, S. V.; Schumaker, Norman E.

2003-06-01

The escalating cost for Next Generation Lithography (NGL) tools is driven in part by the need for complex sources and optics. The cost for a single NGL tool could exceed $50M in the next few years, a prohibitive number for many companies. As a result, several researchers are looking at low cost alternative methods for printing sub-100 nm features. In the mid-1990s, several resarech groups started investigating different methods for imprinting small features. Many of these methods, although very effective at printing small features across an entire wafer, are limited in their ability to do precise overlay. In 1999, Willson and Sreenivasan discovered that imprinting could be done at low pressures and at room temperatures by using low viscosity UV curable monomers. The technology is typically referred to as Step and Flash Imprint Lithography. The use of a quartz template enabled the photocuring process to occur and also opened up the potential for optical alignment of teh wafer and template. This paper traces the development of nanoimprint lithography and addresses the issues that must be solved if this type of technology is to be applied to high-density silicon integrated circuitry.

Analysis of technology and development plan on Lithography process of display industry and semiconductor

International Nuclear Information System (INIS)

2005-02-01

This reports the seminar on Lithography in 2005, which includes these contents; Introduction of Lithography, equipment in NNFC, Exposure technology with fabrication, basic and application optics, RET and Lens aberrations, Alignment and Overlay and Metrology, Resist process with prime, mechanism, issues, resist technology and track system, Mask and OPC such as mask, fabrication, mask technology, proximity effect and OPC, Next generation, Lithography with NGL, Immersion and imprint. In the last, there are questions and answers.

Nanosphere Lithography on Fiber: Towards Engineered Lab-On-Fiber SERS Optrodes

Directory of Open Access Journals (Sweden)

Giuseppe Quero

2018-02-01

Full Text Available In this paper we report on the engineering of repeatable surface enhanced Raman scattering (SERS optical fiber sensor devices (optrodes, as realized through nanosphere lithography. The Lab-on-Fiber SERS optrode consists of polystyrene nanospheres in a close-packed arrays configuration covered by a thin film of gold on the optical fiber tip. The SERS surfaces were fabricated by using a nanosphere lithography approach that is already demonstrated as able to produce highly repeatable patterns on the fiber tip. In order to engineer and optimize the SERS probes, we first evaluated and compared the SERS performances in terms of Enhancement Factor (EF pertaining to different patterns with different nanosphere diameters and gold thicknesses. To this aim, the EF of SERS surfaces with a pitch of 500, 750 and 1000 nm, and gold films of 20, 30 and 40 nm have been retrieved, adopting the SERS signal of a monolayer of biphenyl-4-thiol (BPT as a reliable benchmark. The analysis allowed us to identify of the most promising SERS platform: for the samples with nanospheres diameter of 500 nm and gold thickness of 30 nm, we measured values of EF of 4 × 105, which is comparable with state-of-the-art SERS EF achievable with highly performing colloidal gold nanoparticles. The reproducibility of the SERS enhancement was thoroughly evaluated. In particular, the SERS intensity revealed intra-sample (i.e., between different spatial regions of a selected substrate and inter-sample (i.e., between regions of different substrates repeatability, with a relative standard deviation lower than 9 and 15%, respectively. Finally, in order to determine the most suitable optical fiber probe, in terms of excitation/collection efficiency and Raman background, we selected several commercially available optical fibers and tested them with a BPT solution used as benchmark. A fiber probe with a pure silica core of 200 µm diameter and high numerical aperture (i.e., 0.5 was found to be the

Wavelength selection for multilayer coatings for the lithography generation beyond extreme ultraviolet

NARCIS (Netherlands)

Makhotkin, Igor Alexandrovich; Zoethout, E.; Louis, Eric; Yakunin, A.M.; Muellender, S.; Bijkerk, Frederik

2012-01-01

Reducing the operating wavelength in advanced photolitho- graphy while maintaining the lithography machine’s produc- tivity has been a traditional way to enable improved imaging for the last 20 years. The transition from 13.5 nm to 6.5 to 6.9 nm optical lithography offers a possibility to combine

Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

KAUST Repository

Wan, Weiwei

2014-03-01

Nanoimprint lithography (NIL) is a cost-efficient nanopatterning technology because of its promising advantages of high throughput and high resolution. However, accurate multilevel overlay capability of NIL required for integrated circuit manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage in the manufacture of the coplanar structures, such as integrated plasmonic devices. In this paper, we develop a new process of planar self-alignment imprint lithography (P-SAIL) to fabricate the metallic and dielectric structures on the same plane. P-SAIL transfers the multilevel imprint processes to a single-imprint process which offers higher efficiency and less cost than existing manufacturing methods. Such concept is demonstrated in an example of fabricating planar plasmonic structures consisting of different materials. © 2014 Springer-Verlag Berlin Heidelberg.

Range Compressed Holographic Aperture Ladar

Science.gov (United States)

2017-06-01

entropy saturation behavior of the estimator is analytically described. Simultaneous range-compression and aperture synthesis is experimentally...4 2.1 Circular and Inverse -Circular HAL...2.3 Single Aperture, Multi-λ Imaging ...................................................................................... 14 2.4 Simultaneous Range

Advanced coatings for next generation lithography

Science.gov (United States)

Naujok, P.; Yulin, S.; Kaiser, N.; Tünnermann, A.

2015-03-01

Beyond EUV lithography at 6.X nm wavelength has a potential to extend EUVL beyond the 11 nm node. To implement B-based mirrors and to enable their industrial application in lithography tools, a reflectivity level of > 70% has to be reached in near future. The authors will prove that transition from conventional La/B4C to promising LaN/B4C multilayer coatings leads to enhanced optical properties. Currently a near normal-incidence reflectivity of 58.1% @ 6.65 nm is achieved by LaN/B4C multilayer mirrors. The introduction of ultrathin diffusion barriers into the multilayer design to reach the targeted reflectivity of 70% was also tested. The optimization of multilayer design and deposition process for interface-engineered La/C/B4C multilayer mirrors resulted in peak reflectivity of 56.8% at the wavelength of 6.66 nm. In addition, the thermal stability of several selected multilayers was investigated and will be discussed.

Application of CPL with Interference Mapping Lithography to generate random contact reticle designs for the 65-nm node

Science.gov (United States)

Van Den Broeke, Douglas J.; Laidig, Thomas L.; Chen, J. Fung; Wampler, Kurt E.; Hsu, Stephen D.; Shi, Xuelong; Socha, Robert J.; Dusa, Mircea V.; Corcoran, Noel P.

2004-08-01

Imaging contact and via layers continues to be one of the major challenges to be overcome for 65nm node lithography. Initial results of using ASML MaskTools' CPL Technology to print contact arrays through pitch have demonstrated the potential to further extend contact imaging to a k1 near 0.30. While there are advantages and disadvantages for any potential RET, the benefits of not having to solve the phase assignment problem (which can lead to unresolvable phase conflicts), of it being a single reticle - single exposure technique, and its application to multiple layers within a device (clear field and dark field) make CPL an attractive, cost effective solution to low k1 imaging. However, real semiconductor circuit designs consist of much more than regular arrays of contact holes and a method to define the CPL reticle design for a full chip circuit pattern is required in order for this technique to be feasible in volume manufacturing. Interference Mapping Lithography (IML) is a novel approach for defining optimum reticle patterns based on the imaging conditions that will be used when the wafer is exposed. Figure 1 shows an interference map for an isolated contact simulated using ASML /1150 settings of 0.75NA and 0.92/0.72/30deg Quasar illumination. This technique provides a model-based approach for placing all types features (scattering bars, anti-scattering bars, non-printing assist features, phase shifted and non-phase shifted) for the purpose of enhancing the resolution of the target pattern and it can be applied to any reticle type including binary (COG), attenuated phase shifting mask (attPSM), alternating aperture phase shifting mask (altPSM), and CPL. In this work, we investigate the application of IML to generate CPL reticle designs for random contact patterns that are typical for 65nm node logic devices. We examine the critical issues related to using CPL with Interference Mapping Lithography including controlling side lobe printing, contact patterns with

Rapid fabrication of microfluidic chips based on the simplest LED lithography

Science.gov (United States)

Li, Yue; Wu, Ping; Luo, Zhaofeng; Ren, Yuxuan; Liao, Meixiang; Feng, Lili; Li, Yuting; He, Liqun

2015-05-01

Microfluidic chips are generally fabricated by a soft lithography method employing commercial lithography equipment. These heavy machines require a critical room environment and high lamp power, and the cost remains too high for most normal laboratories. Here we present a novel microfluidics fabrication method utilizing a portable ultraviolet (UV) LED as an alternative UV source for photolithography. With this approach, we can repeat several common microchannels as do these conventional commercial exposure machines, and both the verticality of the channel sidewall and lithography resolution are proved to be acceptable. Further microfluidics applications such as mixing, blood typing and microdroplet generation are implemented to validate the practicability of the chips. This simple but innovative method decreases the cost and requirement of chip fabrication dramatically and may be more popular with ordinary laboratories.

Rapid fabrication of microfluidic chips based on the simplest LED lithography

International Nuclear Information System (INIS)

Li, Yue; Wu, Ping; Liao, Meixiang; Feng, Lili; Li, Yuting; He, Liqun; Luo, Zhaofeng; Ren, Yuxuan

2015-01-01

Microfluidic chips are generally fabricated by a soft lithography method employing commercial lithography equipment. These heavy machines require a critical room environment and high lamp power, and the cost remains too high for most normal laboratories. Here we present a novel microfluidics fabrication method utilizing a portable ultraviolet (UV) LED as an alternative UV source for photolithography. With this approach, we can repeat several common microchannels as do these conventional commercial exposure machines, and both the verticality of the channel sidewall and lithography resolution are proved to be acceptable. Further microfluidics applications such as mixing, blood typing and microdroplet generation are implemented to validate the practicability of the chips. This simple but innovative method decreases the cost and requirement of chip fabrication dramatically and may be more popular with ordinary laboratories. (paper)

A preliminary study of synchrotron light sources for x-ray lithography

International Nuclear Information System (INIS)

Hoffmann, C.R.; Bigham, C.B.; Ebrahim, N.A.; Sawicki, J.A.; Taylor, T.

1989-02-01

A preliminary study of synchrotron light sources has been made, primarily oriented toward x-ray lithography. X-ray lithography is being pursued vigorously in several countries, with a goal of manufacturing high-density computer chips (0.25 μm feature sizes), and may attain commercial success in the next decade. Many other applications of soft x-rays appear worthy of investigation as well. The study group visited synchrotron radiation facilities and had discussions with members of the synchrotron radiation community, particularly Canadians. It concluded that accelerator technology for a conventional synchrotron light source appropriate for x-ray lithography is well established and is consistent with skills and experience at Chalk River Nuclear Laboratories. Compact superconducting systems are being developed also. Their technical requirements overlap with capabilities at Chalk River. (32 refs)

Synthetic Aperture Sequential Beamforming

DEFF Research Database (Denmark)

Kortbek, Jacob; Jensen, Jørgen Arendt; Gammelmark, Kim Løkke

2008-01-01

A synthetic aperture focusing (SAF) technique denoted Synthetic Aperture Sequential Beamforming (SASB) suitable for 2D and 3D imaging is presented. The technique differ from prior art of SAF in the sense that SAF is performed on pre-beamformed data contrary to channel data. The objective is to im......A synthetic aperture focusing (SAF) technique denoted Synthetic Aperture Sequential Beamforming (SASB) suitable for 2D and 3D imaging is presented. The technique differ from prior art of SAF in the sense that SAF is performed on pre-beamformed data contrary to channel data. The objective...... is to improve and obtain a more range independent lateral resolution compared to conventional dynamic receive focusing (DRF) without compromising frame rate. SASB is a two-stage procedure using two separate beamformers. First a set of Bmode image lines using a single focal point in both transmit and receive...... is stored. The second stage applies the focused image lines from the first stage as input data. The SASB method has been investigated using simulations in Field II and by off-line processing of data acquired with a commercial scanner. The performance of SASB with a static image object is compared with DRF...

Quantum lithography beyond the diffraction limit via Rabi-oscillations

Science.gov (United States)

Liao, Zeyang; Al-Amri, Mohammad; Zubairy, M. Suhail

2011-03-01

We propose a quantum optical method to do the sub-wavelength lithography. Our method is similar to the traditional lithography but adding a critical step before dissociating the chemical bound of the photoresist. The subwavelength pattern is achieved by inducing the multi-Rabi-oscillation between the two atomic levels. The proposed method does not require multiphoton absorption and the entanglement of photons. This method is expected to be realizable using current technology. This work is supported by a grant from the Qatar National Research Fund (QNRF) under the NPRP project and a grant from the King Abdulaziz City for Science and Technology (KACST).

Simulation flow and model verification for laser direct-write lithography

Science.gov (United States)

Onanuga, Temitope; Rumler, Maximilian; Erdmann, Andreas

2017-07-01

A simulation flow for laser direct-write lithography (LDWL), a maskless lithography process in which a focused laser beam is scanned through a photoresist, is proposed. The simulation flow includes focusing of Gaussian beams, photoresist exposure, free-radical polymerization chemistry of the photoresist, and photoresist development. We applied the simulation method to investigate the scaling of feature sizes or linewidths for a varying number of exposure cycles at a total constant exposure dose. Experimental results from literature demonstrate that exposing the photoresist over multiple exposure cycles causes a reduction in linewidths. We explore possible reasons for this phenomenon and conclude that radical losses occurring between subsequent exposures provide a possible explanation of the observed effects. Furthermore, we apply the developed simulation method to analyze lithographic structures that were fabricated by a combination of LDWL and nanoimprint lithography. The simulation results agree with the experimental tendencies of a reduced likelihood of overexposures with an increase in the number of exposure cycles.

Filled aperture concepts for the Terrestrial Planet Finder

Science.gov (United States)

Ridgway, Stephen T.

2003-02-01

Filled aperture telescopes can deliver a real, high Strehl image which is well suited for discrimination of faint planets in the vicinity of bright stars and against an extended exo-zodiacal light. A filled aperture offers a rich variety of PSF control and diffraction suppression techniques. Filled apertures are under consideration for a wide spectral range, including visible and thermal-IR, each of which offers a significant selection of biomarker molecular bands. A filled aperture visible TPF may be simpler in several respects than a thermal-IR nuller. The required aperture size (or baseline) is much smaller, and no cryogenic systems are required. A filled aperture TPF would look and act like a normal telescope - vendors and users alike would be comfortable with its design and operation. Filled aperture telescopes pose significant challenges in production of large primary mirrors, and in very stringent wavefront requirements. Stability of the wavefront control, and hence of the PSF, is a major issue for filled aperture systems. Several groups have concluded that these and other issues can be resolved, and that filled aperture options are competitive for a TPF precursor and/or for the full TPF mission. Ball, Boeing-SVS and TRW have recently returned architecture reviews on filled aperture TPF concepts. In this paper, I will review some of the major considerations underlying these filled aperture concepts, and suggest key issues in a TPF Buyers Guide.

Charge storage in mesoscopic graphitic islands fabricated using AFM bias lithography

Energy Technology Data Exchange (ETDEWEB)

Kurra, Narendra; Basavaraja, S; Kulkarni, G U [Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560 064 (India); Prakash, Gyan; Fisher, Timothy S; Reifenberger, Ronald G, E-mail: kulkarni@jncasr.ac.in, E-mail: reifenbr@purdue.edu [Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States)

2011-06-17

Electrochemical oxidation and etching of highly oriented pyrolytic graphite (HOPG) has been achieved using biased atomic force microscopy (AFM) lithography, allowing patterns of varying complexity to be written into the top layers of HOPG. The graphitic oxidation process and the trench geometry after writing were monitored using intermittent contact mode AFM. Electrostatic force microscopy reveals that the isolated mesoscopic islands formed during the AFM lithography process become positively charged, suggesting that they are laterally isolated from the surrounding HOPG substrate. The electrical transport studies of these laterally isolated finite-layer graphitic islands enable detailed characterization of electrical conduction along the c-direction and reveal an unexpected stability of the charged state. Utilizing conducting-atomic force microscopy, the measured I(V) characteristics revealed significant non-linearities. Micro-Raman studies confirm the presence of oxy functional groups formed during the lithography process.

Measurements of pore-scale flow through apertures

Energy Technology Data Exchange (ETDEWEB)

Chojnicki, Kirsten [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-09-01

Pore-scale aperture effects on flow in pore networks was studied in the laboratory to provide a parameterization for use in transport models. Four cases were considered: regular and irregular pillar/pore alignment with and without an aperture. The velocity field of each case was measured and simulated, providing quantitatively comparable results. Two aperture effect parameterizations were considered: permeability and transmission. Permeability values varied by an order of magnitude between the cases with and without apertures. However, transmission did not correlate with permeability. Despite having much greater permeability the regular aperture case permitted less transmission than the regular case. Moreover, both irregular cases had greater transmission than the regular cases, a difference not supported by the permeabilities. Overall, these findings suggest that pore-scale aperture effects on flow though a pore-network may not be adequately captured by properties such as permeability for applications that are interested in determining particle transport volume and timing.

Report of the fifth workshop on synchrotron x-ray lithography

International Nuclear Information System (INIS)

Williams, G.P.; Godel, J.B.; Brown, G.S.

1989-01-01

Semiconductors comprise a greater part of the United States economy than the aircraft, steel and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990's. X-ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x-ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x-ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the ''Exposure Tool,'' that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x-ray lithography and set a time frame, the other to focus on sources

Report of the fifth workshop on synchrotron x-ray lithography

Energy Technology Data Exchange (ETDEWEB)

Williams, G.P.; Godel, J.B. (Brookhaven National Lab., Upton, NY (USA)); Brown, G.S. (Stanford Univ., CA (USA). Stanford Synchrotron Radiation Lab.); Liebmann, W. (Suss (Karl) America, Essex Junction, VT (USA))

1989-01-01

Semiconductors comprise a greater part of the United States economy than the aircraft, steel and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990's. X-ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x-ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x-ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the Exposure Tool,'' that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x-ray lithography and set a time frame, the other to focus on sources.

Report on the fifth workshop on synchrotron x ray lithography

Science.gov (United States)

Williams, G. P.; Godel, J. B.; Brown, G. S.; Liebmann, W.

Semiconductors comprise a greater part of the United States economy than the aircraft, steel, and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990s. X ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin, and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the exposure tool, that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x ray lithography and set a time frame, the other to focus on sources.

Maskless, parallel patterning with zone-plate array lithography

International Nuclear Information System (INIS)

Carter, D. J. D.; Gil, Dario; Menon, Rajesh; Mondol, Mark K.; Smith, Henry I.; Anderson, Erik H.

1999-01-01

Zone-plate array lithography (ZPAL) is a maskless lithography scheme that uses an array of shuttered zone plates to print arbitrary patterns on a substrate. An experimental ultraviolet ZPAL system has been constructed and used to simultaneously expose nine different patterns with a 3x3 array of zone plates in a quasidot-matrix fashion. We present exposed patterns, describe the system design and construction, and discuss issues essential to a functional ZPAL system. We also discuss another ZPAL system which operates with 4.5 nm x radiation from a point source. We present simulations which show that, with our existing x-ray zone plates and this system, we should be able to achieve 55 nm resolution. (c) 1999 American Vacuum Society

Low Cost Lithography Tool for High Brightness LED Manufacturing

Energy Technology Data Exchange (ETDEWEB)

Andrew Hawryluk; Emily True

2012-06-30

The objective of this activity was to address the need for improved manufacturing tools for LEDs. Improvements include lower cost (both capital equipment cost reductions and cost-ofownership reductions), better automation and better yields. To meet the DOE objective of $1- 2/kilolumen, it will be necessary to develop these highly automated manufacturing tools. Lithography is used extensively in the fabrication of high-brightness LEDs, but the tools used to date are not scalable to high-volume manufacturing. This activity addressed the LED lithography process. During R&D and low volume manufacturing, most LED companies use contact-printers. However, several industries have shown that these printers are incompatible with high volume manufacturing and the LED industry needs to evolve to projection steppers. The need for projection lithography tools for LED manufacturing is identified in the Solid State Lighting Manufacturing Roadmap Draft, June 2009. The Roadmap states that Projection tools are needed by 2011. This work will modify a stepper, originally designed for semiconductor manufacturing, for use in LED manufacturing. This work addresses improvements to yield, material handling, automation and throughput for LED manufacturing while reducing the capital equipment cost.

Multi-level single mode 2D polymer waveguide optical interconnects using nano-imprint lithography

NARCIS (Netherlands)

Khan, M.U.; Justice, J.; Petäjä, J.; Korhonen, T.; Boersma, A.; Wiegersma, S.; Karppinen, M.; Corbett, B.

2015-01-01

Single and multi-layer passive optical interconnects using single mode polymer waveguides are demonstrated using UV nano-imprint lithography. The fabrication tolerances associated with imprint lithography are investigated and we show a way to experimentally quantify a small variation in index

Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography (Keynote Paper)

Science.gov (United States)

Steen, S. E.; McNab, S. J.; Sekaric, L.; Babich, I.; Patel, J.; Bucchignano, J.; Rooks, M.; Fried, D. M.; Topol, A. W.; Brancaccio, J. R.; Yu, R.; Hergenrother, J. M.; Doyle, J. P.; Nunes, R.; Viswanathan, R. G.; Purushothaman, S.; Rothwell, M. B.

2005-05-01

Semiconductor process development teams are faced with increasing process and integration complexity while the time between lithographic capability and volume production has remained more or less constant over the last decade. Lithography tools have often gated the volume checkpoint of a new device node on the ITRS roadmap. The processes have to be redeveloped after the tooling capability for the new groundrule is obtained since straight scaling is no longer sufficient. In certain cases the time window that the process development teams have is actually decreasing. In the extreme, some forecasts are showing that by the time the 45nm technology node is scheduled for volume production, the tooling vendors will just begin shipping the tools required for this technology node. To address this time pressure, IBM has implemented a hybrid-lithography strategy that marries the advantages of optical lithography (high throughput) with electron beam direct write lithography (high resolution and alignment capability). This hybrid-lithography scheme allows for the timely development of semiconductor processes for the 32nm node, and beyond. In this paper we will describe how hybrid lithography has enabled early process integration and device learning and how IBM applied e-beam & optical hybrid lithography to create the world's smallest working SRAM cell.

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

International Nuclear Information System (INIS)

Li Yi-Gui; Yang Chun-Sheng; Liu Jing-Quan; Sugiyama Susumu

2011-01-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm 2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost. (cross-disciplinary physics and related areas of science and technology)

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

Science.gov (United States)

Li, Yi-Gui; Yang, Chun-Sheng; Liu, Jing-Quan; Sugiyama, Susumu

2011-03-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost.

Performance of introducing outdoor cold air for cooling a plant production system with artificial light

Directory of Open Access Journals (Sweden)

Jun eWang

2016-03-01

Full Text Available The commercial use of a plant production system with artificial light (PPAL is limited by its high initial construction and operation costs. The electric-energy consumed by heat pumps, applied mainly for cooling, accounts for 15-35% of the total electric-energy used in a PPAL. To reduce the electric-energy consumption, an air exchanger with low capacity (180 W was used for cooling by introducing outdoor cold air. In this experiment, the indoor air temperature in two PPALs (floor area: 6.2 m2 each was maintained at 25ºC and 20ºC during light and dark periods, respectively, for lettuce production. In one PPAL (PPALe, an air exchanger (air flow rate: 250 m3 h-1 was used along with a heat pump (cooling capacity: 3.2 kW to maintain the indoor air temperature at the set-point. The other PPAL (PPALc with only a heat pump (cooling capacity: 3.2 kW was used for reference. Effects of introducing outdoor cold air on energy use efficiency, coefficient of performance (COP, electric-energy consumption for cooling and growth of lettuce were investigated. The results show that: when the air temperature difference between indoor and outdoor ranged from 20.2°C to 30.0°C: 1 the average energy use efficiency of the air exchanger was 2.8 and 3.4 times greater than the COP of the heat pumps in the PPALe and PPALc, respectively; 2 hourly electric-energy consumption in the PPALe reduced by 15.8-73.7% compared with that in the PPALc; 3 daily supply of CO2 in the PPALe reduced from 0.15 kg to 0.04 kg compared with that in the PPALc; 4 no significant difference in lettuce growth was observed in both PPALs. The results indicate that using air exchanger to introduce outdoor cold air should be considered as an effective way to reduce electric-energy consumption for cooling with little effects on plant growth in a PPAL.

Plasma sources for EUV lithography exposure tools

International Nuclear Information System (INIS)

Banine, Vadim; Moors, Roel

2004-01-01

The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil extremely high demands both technical and cost oriented. The EUVL tool operates at a wavelength in the range 13-14 nm, which requires a major re-thinking of state-of-the-art lithography systems operating in the DUV range. The light production mechanism changes from conventional lamps and lasers to relatively high temperature emitting plasmas. The light transport, mainly refractive for DUV, should become reflective for EUV. The source specifications are derived from the customer requirements for the complete tool, which are: throughput, cost of ownership (CoO) and imaging quality. The EUVL system is considered as a follow up of the existing DUV based lithography technology and, while improving the feature resolution, it has to maintain high wafer throughput performance, which is driven by the overall CoO picture. This in turn puts quite high requirements on the collectable in-band power produced by an EUV source. Increased, due to improved feature resolution, critical dimension (CD) control requirements, together with reflective optics restrictions, necessitate pulse-to-pulse repeatability, spatial stability control and repetition rates, which are substantially better than those of current optical systems. All together the following aspects of the source specification will be addressed: the operating wavelength, the EUV power, the hot spot size, the collectable angle, the repetition rate, the pulse-to-pulse repeatability and the debris induced lifetime of components

Deep-etch x-ray lithography at the ALS: First results

Energy Technology Data Exchange (ETDEWEB)

Malek, C.K.; Jackson, K.H. [Ernest Orlando Lawrence Berkeley National Lab., CA (United States); Brennen, R.A. [Jet Propulsion Lab., Pasadena, CA (United States)] [and others

1997-04-01

The fabrication of high-aspect-ratio and three-dimensional (3D) microstructures is of increasing interest in a multitude of applications in fields such as micromechanics, optics, and interconnect technology. Techniques and processes that enable lithography in thick materials differ from the planar technologies used in standard integrated circuit processing. Deep x-ray lithography permits extremely precise and deep proximity printing of a given pattern from a mask into a very thick resist. It requires a source of hard, intense, and well collimated x-ray radiation, as is provided by a synchrotron radiation source. The thick resist microstructures, so produced can be used as templates from which ultrahigh precision parts with high aspect ratios can be mass-produced out of a large variety of materials (metals, plastics, ceramics). This whole series of techniques and processes has been historically referred to as {open_quotes}LIGA,{close_quotes} from the German acronym for lithography, electroforming (Galvanoformung), and plastic molding (Abformung), the first development of the basic LIGA process having been performed at the Nuclear Research Center at Karlsruhe in Germany.

Drawing lithography for microneedles: a review of fundamentals and biomedical applications.

Science.gov (United States)

Lee, Kwang; Jung, Hyungil

2012-10-01

A microneedle is a three-dimensional (3D) micromechanical structure and has been in the spotlight recently as a drug delivery system (DDS). Because a microneedle delivers the target drug after penetrating the skin barrier, the therapeutic effects of microneedles proceed from its 3D structural geometry. Various types of microneedles have been fabricated using subtractive micromanufacturing methods which are based on the inherently planar two-dimensional (2D) geometries. However, traditional subtractive processes are limited for flexible structural microneedles and makes functional biomedical applications for efficient drug delivery difficult. The authors of the present study propose drawing lithography as a unique additive process for the fabrication of a microneedle directly from 2D planar substrates, thus overcoming a subtractive process shortcoming. The present article provides the first overview of the principal drawing lithography technology: fundamentals and biomedical applications. The continuous drawing technique for an ultrahigh-aspect ratio (UHAR) hollow microneedle, stepwise controlled drawing technique for a dissolving microneedle, and drawing technique with antidromic isolation for a hybrid electro-microneedle (HEM) are reviewed, and efficient biomedical applications by drawing lithography-mediated microneedles as an innovative drug and gene delivery system are described. Drawing lithography herein can provide a great breakthrough in the development of materials science and biotechnology. Copyright © 2012 Elsevier Ltd. All rights reserved.

Metal layer mask patterning by force microscopy lithography

International Nuclear Information System (INIS)

Filho, H.D. Fonseca; Mauricio, M.H.P.; Ponciano, C.R.; Prioli, R.

2004-01-01

The nano-lithography of a metallic surface in air by atomic force microscopy while operated in contact mode and equipped with a diamond tip is presented. The aluminum mask was prepared by thermal deposition on arsenic sulfide films. The analysis of the scratches performed by the tip on the metallic mask show that the depth of the lithographed pattern increases with the increase of the applied normal force. The scanning velocity is also shown to influence the AFM patterning process. As the scanning velocity increases, the scratch depth and width decreases. Nano-indentations performed with the diamond tip show that the plastically deformed surface increases with the increase of the duration of the applied force. The use of the nano-lithography method to create nano-structures is discussed

V-groove plasmonic waveguides fabricated by nanoimprint lithography

DEFF Research Database (Denmark)

Fernandez-Cuesta, I.; Nielsen, R.B.; Boltasseva, Alexandra

2007-01-01

Propagation of channel plasmon-polariton modes in the bottom of a metal V groove has been recently demonstrated. It provides a unique way of manipulating light at nanometer length scale. In this work, we present a method based on nanoimprint lithography that allows parallel fabrication of integra...... of integrated optical devices composed of metal V grooves. This method represents an improvement with respect to previous works, where the V grooves were fabricated by direct milling of the metal, in terms of robustness and throughput. © 2007 American Vacuum Society......Propagation of channel plasmon-polariton modes in the bottom of a metal V groove has been recently demonstrated. It provides a unique way of manipulating light at nanometer length scale. In this work, we present a method based on nanoimprint lithography that allows parallel fabrication...

Calibration of the TUD Ku-band Synthetic Aperture Radiometer

DEFF Research Database (Denmark)

Laursen, Brian; Skou, Niels

1995-01-01

The TUD Synthetic Aperture Radiometer is a 2-channel demonstration model that can simulate a thinned aperture radiometer having an unfilled aperture consisting of several small antenna elements. Aperture synthesis obtained by interferometric measurements using the antenna elements in pairs, follo...

A new lithography of functional plasma polymerized thin films

International Nuclear Information System (INIS)

Kim, Sung-O

2001-01-01

The preparation of the resist for the vacuum lithography was carried out by plasma polymerization. The resist manufactured by plasma polymerization is a monomer produced by MMA (Methyl methacrylate). The functional groups of MMA appeared in the PPMMA (Plasma Polymerized Methyl methacrylate) as well, and this was confirmed through an analysis using FT-IR. The polymerization rate increased as a function of the plasma power and decreased as a function of the system pressure. The sensitivity and contrast of the plasma polymerized thin films were 15 μC/cm2 and 4.3 respectively. The size of the pattern manufactured by Vacuum Lithography using the plasma polymerized thin films was 100 nm

Soft X-ray microscopy and lithography with synchrotron radiation

International Nuclear Information System (INIS)

Gudat, W.

1977-12-01

Considerable progress in the technique microscopy with soft X-ray radiation has been achieved in particular through the application of synchrotron radiation. Various methods which are currently being studied theoretically or already being used practically will be described briefly. Attention is focussed on the method of contact microscopy. Various biological specimens have been investigated by this method with a resolution as good as 100 A. X-ray lithography which in the technical procedure is very similar to contact microscopy gives promise for the fabrication of high quality submicron structures in electronic device production. Important factors limiting the resolution and determining the performance of contact microscopy and X-ray lithography will be discussed. (orig.) [de

Critical dimension and pattern size enhancement using pre-strained lithography

Energy Technology Data Exchange (ETDEWEB)

Hong, Jian-Wei [Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Yang, Chung-Yuan [Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Lo, Cheng-Yao, E-mail: chengyao@mx.nthu.edu.tw [Department of Power Mechanical Engineering, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China); Institute of NanoEngineering and MicroSystems, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsin Chu 30013, Taiwan (China)

2014-10-13

This paper proposes a non-wavelength-shortening-related critical dimension and pattern size reduction solution for the integrated circuit industry that entails generating strain on the substrate prior to lithography. Pattern size reduction of up to 49% was achieved regardless of shape, location, and size on the xy plane, and complete theoretical calculations and process steps are described in this paper. This technique can be applied to enhance pattern resolution by employing materials and process parameters already in use and, thus, to enhance the capability of outdated lithography facilities, enabling them to particularly support the manufacturing of flexible electronic devices with polymer substrates.

Investigation of the physics of diamond MEMS : diamond allotrope lithography

International Nuclear Information System (INIS)

Zalizniak, I.; Olivero, P.; Jamieson, D.N.; Prawer, S.; Reichart, P.; Rubanov, S.; Petriconi, S.

2005-01-01

We propose a novel lithography process in which ion induced phase transfomations of diamond form sacrificial layers allowing the fabrication of small structures including micro-electromechanical systems (MEMS). We have applied this novel lithography to the fabrication of diamond microcavities, cantilevers and optical waveguides. In this paper we present preliminary experiments directed at the fabrication of suspended diamond disks that have the potential for operation as optical resonators. Such structures would be very durable and resistant to chemical attack with potential applications as novel sensors for extreme environments or high temperature radiation detectors. (author). 3 refs., 3 figs

Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

Science.gov (United States)

Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

2017-06-01

The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (industries and opening opportunities in nanomanufacturing.

Nano-LED array fabrication suitable for future single photon lithography

International Nuclear Information System (INIS)

Mikulics, M; Hardtdegen, H

2015-01-01

We report on an alternative illumination concept for a future lithography based on single-photon emitters and important technological steps towards its implementation. Nano light-emitting diodes (LEDs) are chosen as the photon emitters. First, the development of their fabrication and their integration technology is presented, then their optical characteristics assessed. Last, size-controlled nano-LEDs, well positioned in an array, are electrically driven and utilized for illumination. Nanostructures are lithographically formed, demonstrating the feasibility of the approach. The potential of single-photon lithography to reach the ultimate scale limits in mass production is discussed. (paper)

Seamless-merging-oriented parallel inverse lithography technology

International Nuclear Information System (INIS)

Yang Yiwei; Shi Zheng; Shen Shanhu

2009-01-01

Inverse lithography technology (ILT), a promising resolution enhancement technology (RET) used in next generations of IC manufacture, has the capability to push lithography to its limit. However, the existing methods of ILT are either time-consuming due to the large layout in a single process, or not accurate enough due to simply block merging in the parallel process. The seamless-merging-oriented parallel ILT method proposed in this paper is fast because of the parallel process; and most importantly, convergence enhancement penalty terms (CEPT) introduced in the parallel ILT optimization process take the environment into consideration as well as environmental change through target updating. This method increases the similarity of the overlapped area between guard-bands and work units, makes the merging process approach seamless and hence reduces hot-spots. The experimental results show that seamless-merging-oriented parallel ILT not only accelerates the optimization process, but also significantly improves the quality of ILT.

Scanning probe lithography for nanoimprinting mould fabrication

International Nuclear Information System (INIS)

Luo Gang; Xie Guoyong; Zhang Yongyi; Zhang Guoming; Zhang Yingying; Carlberg, Patrick; Zhu Tao; Liu Zhongfan

2006-01-01

We propose a rational fabrication method for nanoimprinting moulds by scanning probe lithography. By wet chemical etching, different kinds of moulds are realized on Si(110) and Si(100) surfaces according to the Si crystalline orientation. The structures have line widths of about 200 nm with a high aspect ratio. By reactive ion etching, moulds with patterns free from the limitation of Si crystalline orientation are also obtained. With closed-loop scan control of a scanning probe microscope, the length of patterned lines is more than 100 μm by integrating several steps of patterning. The fabrication process is optimized in order to produce a mould pattern with a line width about 10 nm. The structures on the mould are further duplicated into PMMA resists through the nanoimprinting process. The method of combining scanning probe lithography with wet chemical etching or reactive ion etching (RIE) provides a resistless route for the fabrication of nanoimprinting moulds

Beam aperture modifier design with acoustic metasurfaces

Science.gov (United States)

Tang, Weipeng; Ren, Chunyu

2017-10-01

In this paper, we present a design concept of acoustic beam aperture modifier using two metasurface-based planar lenses. By appropriately designing the phase gradient profile along the metasurface, we obtain a class of acoustic convex lenses and concave lenses, which can focus the incoming plane waves and collimate the converging waves, respectively. On the basis of the high converging and diverging capability of these lenses, two kinds of lens combination scheme, including the convex-concave type and convex-convex type, are proposed to tune up the incoming beam aperture as needed. To be specific, the aperture of the acoustic beam can be shrunk or expanded through adjusting the phase gradient of the pair of lenses and the spacing between them. These lenses and the corresponding aperture modifiers are constructed by the stacking ultrathin labyrinthine structures, which are obtained by the geometry optimization procedure and exhibit high transmission coefficient and a full range of phase shift. The simulation results demonstrate the effectiveness of our proposed beam aperture modifiers. Due to the flexibility in aperture controlling and the simplicity in fabrication, the proposed modifiers have promising potential in applications, such as acoustic imaging, nondestructive evaluation, and communication.

Integration of multiple theories for the simulation of laser interference lithography processes.

Science.gov (United States)

Lin, Te-Hsun; Yang, Yin-Kuang; Fu, Chien-Chung

2017-11-24

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

Tunable atomic force microscopy bias lithography on electron beam induced carbonaceous platforms

Directory of Open Access Journals (Sweden)

Narendra Kurra

2013-09-01

Full Text Available Tunable local electrochemical and physical modifications on the carbonaceous platforms are achieved using Atomic force microscope (AFM bias lithography. These carbonaceous platforms are produced on Si substrate by the technique called electron beam induced carbonaceous deposition (EBICD. EBICD is composed of functionalized carbon species, confirmed through X-ray photoelectron spectroscopy (XPS analysis. AFM bias lithography in tapping mode with a positive tip bias resulted in the nucleation of attoliter water on the EBICD surface under moderate humidity conditions (45%. While the lithography in the contact mode with a negative tip bias caused the electrochemical modifications such as anodic oxidation and etching of the EBICD under moderate (45% and higher (60% humidity conditions respectively. Finally, reversible charge patterns are created on these EBICD surfaces under low (30% humidity conditions and investigated by means of electrostatic force microscopy (EFM.

Integration of multiple theories for the simulation of laser interference lithography processes

Science.gov (United States)

Lin, Te-Hsun; Yang, Yin-Kuang; Fu, Chien-Chung

2017-11-01

The periodic structure of laser interference lithography (LIL) fabrication is superior to other lithography technologies. In contrast to traditional lithography, LIL has the advantages of being a simple optical system with no mask requirements, low cost, high depth of focus, and large patterning area in a single exposure. Generally, a simulation pattern for the periodic structure is obtained through optical interference prior to its fabrication through LIL. However, the LIL process is complex and combines the fields of optical and polymer materials; thus, a single simulation theory cannot reflect the real situation. Therefore, this research integrates multiple theories, including those of optical interference, standing waves, and photoresist characteristics, to create a mathematical model for the LIL process. The mathematical model can accurately estimate the exposure time and reduce the LIL process duration through trial and error.

3D Simulation of Nano-Imprint Lithography

DEFF Research Database (Denmark)

Román Marín, José Manuel; Rasmussen, Henrik K.; Hassager, Ole

2010-01-01

A proof of concept study of the feasibility of fully three-dimensional (3D) time-dependent simulation of nano-imprint lithography of polymer melt, where the polymer is treated as a structured liquid, has been presented. Considering the flow physics of the polymer as a structured liquid, we have...

Ion mobility spectrometer with virtual aperture grid

Science.gov (United States)

Pfeifer, Kent B.; Rumpf, Arthur N.

2010-11-23

An ion mobility spectrometer does not require a physical aperture grid to prevent premature ion detector response. The last electrodes adjacent to the ion collector (typically the last four or five) have an electrode pitch that is less than the width of the ion swarm and each of the adjacent electrodes is connected to a source of free charge, thereby providing a virtual aperture grid at the end of the drift region that shields the ion collector from the mirror current of the approaching ion swarm. The virtual aperture grid is less complex in assembly and function and is less sensitive to vibrations than the physical aperture grid.

Laser interference lithography with highly accurate interferometric alignment

NARCIS (Netherlands)

van Soest, Frank J.; van Wolferen, Hendricus A.G.M.; Hoekstra, Hugo; de Ridder, R.M.; Worhoff, Kerstin; Lambeck, Paul

It is shown experimentally that in laser interference lithography, by using a reference grating, respective grating layers can be positioned with high relative accuracy. A 0.001 degree angular and a few nanometers lateral resolution have been demonstrated.

Wafer-shape metrics based foundry lithography

Science.gov (United States)

Kim, Sungtae; Liang, Frida; Mileham, Jeffrey; Tsai, Damon; Bouche, Eric; Lee, Sean; Huang, Albert; Hua, C. F.; Wei, Ming Sheng

2017-03-01

As device shrink, there are many difficulties with process integration and device yield. Lithography process control is expected to be a major challenge due to tighter overlay and focus control requirement. The understanding and control of stresses accumulated during device fabrication has becoming more critical at advanced technology nodes. Within-wafer stress variations cause local wafer distortions which in turn present challenges for managing overlay and depth of focus during lithography. A novel technique for measuring distortion is Coherent Gradient Sensing (CGS) interferometry, which is capable of generating a high-density distortion data set of the full wafer within a time frame suitable for a high volume manufacturing (HVM) environment. In this paper, we describe the adoption of CGS (Coherent Gradient Sensing) interferometry into high volume foundry manufacturing to overcome these challenges. Leveraging this high density 3D metrology, we characterized its In-plane distortion as well as its topography capabilities applied to the full flow of an advanced foundry manufacturing. Case studies are presented that summarize the use of CGS data to reveal correlations between in-plane distortion and overlay variation as well as between topography and device yield.

Imaging with rotating slit apertures and rotating collimators

International Nuclear Information System (INIS)

Gindi, G.R.; Arendt, J.; Barrett, H.H.; Chiu, M.Y.; Ervin, A.; Giles, C.L.; Kujoory, M.A.; Miller, E.L.; Simpson, R.G.

1982-01-01

The statistical quality of conventional nuclear medical imagery is limited by the small signal collect through low-efficiency conventional apertures. Coded-aperture imaging overcomes this by employing a two-step process in which the object is first efficiently detected as an ''encoded'' form which does not resemble the object, and then filtered (or ''decoded'') to form an image. We present here the imaging properties of a class of time-modulated coded apertures which, unlike most coded apertures, encode projections of the object rather than the object itself. These coded apertures can reconstruct a volume object nontomographically, tomographically (one plane focused), or three-dimensionally. We describe a new decoding algorithm that reconstructs the object from its planar projections. Results of noise calculations are given, and the noise performance of these coded-aperture systems is compared to that of conventional counterparts. A hybrid slit-pinhole system which combines the imaging advantages of a rotating slit and a pinhole is described. A new scintillation detector which accurately measures the position of an event in one dimension only is presented, and its use in our coded-aperture system is outlined. Finally, results of imaging test objects and animals are given

Imaging with rotating slit apertures and rotating collimators

International Nuclear Information System (INIS)

Gindi, G.R.; Arendt, J.; Barrett, H.H.; Chiu, M.Y.; Ervin, A.; Giles, C.L.; Kujoory, M.A.; Miller, E.L.; Simpson, R.G.

1982-01-01

The statistical quality of conventional nuclear medical imagery is limited by the small signal collected through low-efficiency conventional apertures. Coded-aperture imaging overcomes this by employing a two-step process in which the object is first efficiently detected as an encoded form which does not resemble the object, and then filtered (or decoded) to form an image. We present here the imaging properties of a class of time-modulated coded apertures which, unlike most coded apertures, encode projections of the object rather than the object itself. These coded apertures can reconstruct a volume object nontomographically, tomographically (one plane focused), or three-dimensionally. We describe a new decoding algorithm that reconstructs the object from its planar projections. Results of noise calculations are given, and the noise performance of these coded-aperture systems is compared to that of conventional counterparts. A hybrid slit-pinhole system which combines the imaging advantages of a rotating slit and a pinhole is described. A new scintillation detector which accurately measures the position of an event in one dimension only is presented, and its use in our coded-aperture system is outlined. Finally, results of imaging test objects and animals are given

ILT optimization of EUV masks for sub-7nm lithography

Science.gov (United States)

Hooker, Kevin; Kuechler, Bernd; Kazarian, Aram; Xiao, Guangming; Lucas, Kevin

2017-06-01

The 5nm and 7nm technology nodes will continue recent scaling trends and will deliver significantly smaller minimum features, standard cell areas and SRAM cell areas vs. the 10nm node. There are tremendous economic pressures to shrink each subsequent technology, though in a cost-effective and performance enhancing manner. IC manufacturers are eagerly awaiting EUV so that they can more aggressively shrink their technology than they could by using complicated MPT. The current 0.33NA EUV tools and processes also have their patterning limitations. EUV scanner lenses, scanner sources, masks and resists are all relatively immature compared to the current lithography manufacturing baseline of 193i. For example, lens aberrations are currently several times larger (as a function of wavelength) in EUV scanners than for 193i scanners. Robustly patterning 16nm L/S fully random logic metal patterns and 40nm pitch random logic rectangular contacts with 0.33NA EUV are tough challenges that will benefit from advanced OPC/RET. For example, if an IC manufacturer can push single exposure device layer resolution 10% tighter using improved ILT to avoid using DPT, there will be a significant cost and process complexity benefit to doing so. ILT is well known to have considerable benefits in finding flexible 193i mask pattern solutions to improve process window, improve 2D CD control, improve resolution in low K1 lithography regime and help to delay the introduction of DPT. However, ILT has not previously been applied to EUV lithography. In this paper, we report on new developments which extend ILT method to EUV lithography and we characterize the benefits seen vs. traditional EUV OPC/RET methods.

Development of nanostencil lithography and its applications for plasmonics and vibrational biospectroscopy

Science.gov (United States)

Aksu, Serap

Development of low cost nanolithography tools for precisely creating a variety of nanostructure shapes and arrangements in a high-throughput fashion is crucial for next generation biophotonic technologies. Although existing lithography techniques offer tremendous design flexibility, they have major drawbacks such as low-throughput and fabrication complexity. In addition the demand for the systematic fabrication of sub-100 nm structures on flexible, stretchable, non-planar nanoelectronic/photonic systems and multi-functional materials has fueled the research for innovative fabrication methods in recent years. This thesis research investigates a novel lithography approach for fabrication of engineered plasmonic nanostructures and metamaterials operating at visible and infrared wavelengths. The technique is called Nanostencil Lithography (NSL) and relies on direct deposition of materials through nanoapertures on a stencil. NSL enables high throughput fabrication of engineered antenna arrays with optical qualities similar to the ones fabricated by standard electron beam lithography. Moreover, nanostencils can be reused multiple times to fabricate series of plasmonic nanoantenna arrays with identical optical responses enabling high throughput manufacturing. Using nanostencils, very precise nanostructures could be fabricated with 10 nm accuracy. Furthermore, this technique has flexibility and resolution to create complex plasmonic nanostructure arrays on the substrates that are difficult to work with e-beam and ion beam lithography tools. Combining plasmonics with polymeric materials, biocompatible surfaces or curvilinear and non-planar objects enable unique optical applications since they can preserve normal device operation under large strain. In this work, mechanically tunable flexible optical materials and spectroscopy probes integrated on fiber surfaces that could be used for a wide range of applications are demonstrated. Finally, the first application of NSL

Microfabricated high-bandpass foucault aperture for electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Glaeser, Robert; Cambie, Rossana; Jin, Jian

2014-08-26

A variant of the Foucault (knife-edge) aperture is disclosed that is designed to provide single-sideband (SSB) contrast at low spatial frequencies but retain conventional double-sideband (DSB) contrast at high spatial frequencies in transmission electron microscopy. The aperture includes a plate with an inner open area, a support extending from the plate at an edge of the open area, a half-circle feature mounted on the support and located at the center of the aperture open area. The radius of the half-circle portion of reciprocal space that is blocked by the aperture can be varied to suit the needs of electron microscopy investigation. The aperture is fabricated from conductive material which is preferably non-oxidizing, such as gold, for example.

Beam focusing by aperture displacement in multiampere ion sources

International Nuclear Information System (INIS)

Stewart, L.D.; Kim, J.; Matsuda, S.

1975-05-01

Results are given of an experimental study of beam focusing by aperture displacement (Δx) in duoPIGatron ion sources. Measurements with a single aperture, accel-decel electrode geometry show that the beam deflection angle is linear with Δx/z for the round aperture and with Δx/z* 2 for the slit aperture where z and z* are respectively the extraction gap distance and the effective gap distance. Applying the result of the single aperture study to the multiaperture, duoPIGatron sources, it was possible to increase the neutral beam injection power to the ORMAK plasma by approximately 40 percent. Also presented are discussion and comparison of other work on the effect of aperture displacement on beam deflection. (U.S.)

XUV free-electron laser-based projection lithography systems

Energy Technology Data Exchange (ETDEWEB)

Newnam, B.E.

1990-01-01

Free-electron laser sources, driven by rf-linear accelerators, have the potential to operate in the extreme ultraviolet (XUV) spectral range with more than sufficient average power for high-volume projection lithography. For XUV wavelengths from 100 nm to 4 nm, such sources will enable the resolution limit of optical projection lithography to be extended from 0.25 {mu}m to 0.05{mu}m and with an adequate total depth of focus (1 to 2 {mu}m). Recent developments of a photoinjector of very bright electron beams, high-precision magnetic undulators, and ring-resonator cavities raise our confidence that FEL operation below 100 nm is ready for prototype demonstration. We address the motivation for an XUV FEL source for commercial microcircuit production and its integration into a lithographic system, include reflecting reduction masks, reflecting XUV projection optics and alignment systems, and surface-imaging photoresists. 52 refs., 7 figs.

Field measurements for low-aperture magnetic elements

International Nuclear Information System (INIS)

Mikhajlichenko, A.A.

1989-01-01

The method of the field measurements with help of bismuth wire in low aperture magnetic elements is revised. The quadrupole with permanent magnets was tested. It has aperture diameter about 4 mm and length 40 mm. Gradient about 38 kOe/cm was measured. The accuracy of the magnetic axis position definition is better than 1 μm. This method is a good kandidate for linear colider low aperture magnetic elements measurements. 7 refs.; 6 figs

Fast decoding algorithms for geometric coded apertures

International Nuclear Information System (INIS)

Byard, Kevin

2015-01-01

Fast decoding algorithms are described for the class of coded aperture designs known as geometric coded apertures which were introduced by Gourlay and Stephen. When compared to the direct decoding method, the algorithms significantly reduce the number of calculations required when performing the decoding for these apertures and hence speed up the decoding process. Experimental tests confirm the efficacy of these fast algorithms, demonstrating a speed up of approximately two to three orders of magnitude over direct decoding.

Manipulation and simulations of thermal field profiles in laser heat-mode lithography

Science.gov (United States)

Wei, Tao; Wei, Jingsong; Wang, Yang; Zhang, Long

2017-12-01

Laser heat-mode lithography is a very useful method for high-speed fabrication of large-area micro/nanostructures. To obtain nanoscale pattern structures, one needs to manipulate the thermal diffusion channels. This work reports the manipulation of the thermal diffusion in laser heat-mode lithography and provides methods to restrain the in-plane thermal diffusion and improve the out-of-plane thermal diffusion. The thermal field profiles in heat-mode resist thin films have been given. It is found that the size of the heat-spot can be decreased by decreasing the thickness of the heat-mode resist thin films, inserting the thermal conduction layers, and shortening the laser irradiation time. The optimized laser writing strategy is also given, where the in-plane thermal diffusion is completely restrained and the out-of-plane thermal diffusion is improved. The heat-spot size is almost equal to that of the laser spot, accordingly. This work provides a very important guide to laser heat-mode lithography.

Suspended liquid subtractive lithography: printing three dimensional channels directly into uncured PDMS

Science.gov (United States)

Helmer, D.; Voigt, A.; Wagner, S.; Keller, N.; Sachsenheimer, K.; Kotz, F.; Nargang, T. M.; Rapp, B. E.

2018-02-01

Polydimethylsiloxane (PDMS) is one of the most widely used polymers for the generation of microfluidic chips. The standard procedures of soft lithography require the formation of a new master structure for every design which is timeconsuming and expensive. All channel generated by soft lithography need to be consecutively sealed by bonding which is a process that can proof to be hard to control. Channel cross-sections are largely restricted to squares or flat-topped designs and the generation of truly three-dimensional designs is not straightforward. Here we present Suspended Liquid Subtractive Lithography (SLSL) a method for generating microfluidic channels of nearly arbitrary three-dimensional structures in PDMS that do not require master formation or bonding and give circular channel cross sections which are especially interesting for mimicking in vivo environments. In SLSL, an immiscible liquid is introduced into the uncured PDMS by a capillary mounted on a 3D printer head. The liquid forms continuous "threads" inside the matrix thus creating void suspended channel structures.

450mm wafer patterning with jet and flash imprint lithography

Science.gov (United States)

Thompson, Ecron; Hellebrekers, Paul; Hofemann, Paul; LaBrake, Dwayne L.; Resnick, Douglas J.; Sreenivasan, S. V.

2013-09-01

The next step in the evolution of wafer size is 450mm. Any transition in sizing is an enormous task that must account for fabrication space, environmental health and safety concerns, wafer standards, metrology capability, individual process module development and device integration. For 450mm, an aggressive goal of 2018 has been set, with pilot line operation as early as 2016. To address these goals, consortiums have been formed to establish the infrastructure necessary to the transition, with a focus on the development of both process and metrology tools. Central to any process module development, which includes deposition, etch and chemical mechanical polishing is the lithography tool. In order to address the need for early learning and advance process module development, Molecular Imprints Inc. has provided the industry with the first advanced lithography platform, the Imprio® 450, capable of patterning a full 450mm wafer. The Imprio 450 was accepted by Intel at the end of 2012 and is now being used to support the 450mm wafer process development demands as part of a multi-year wafer services contract to facilitate the semiconductor industry's transition to lower cost 450mm wafer production. The Imprio 450 uses a Jet and Flash Imprint Lithography (J-FILTM) process that employs drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for markets including NAND Flash memory, patterned media for hard disk drives and displays. This paper reviews the recent performance of the J-FIL technology (including overlay, throughput and defectivity), mask development improvements provided by Dai Nippon Printing, and the application of the technology to a 450mm lithography platform.

Silicon Nanowire Fabrication Using Edge and Corner Lithography

NARCIS (Netherlands)

Yagubizade, H.; Berenschot, Johan W.; Jansen, Henricus V.; Elwenspoek, Michael Curt; Tas, Niels Roelof

2010-01-01

This paper presents a wafer scale fabrication method of single-crystalline silicon nanowires (SiNWs) bound by <111> planes using a combination of edge and corner lithography. These are methods of unconventional nanolithography for wafer scale nano-patterning which determine the size of nano-features

Fabrication of Spin-Transfer Nano-Oscillator by Colloidal Lithography

Directory of Open Access Journals (Sweden)

Bin Fang

2015-01-01

Full Text Available We fabricate nanoscale spin-transfer oscillators (STOs by utilizing colloidal nanoparticles as a lithographic mask. By this approach, high quality STO devices can be fabricated, and as an example the fabricated STO devices using MgO magnetic tunnel junction as the basic cell exhibit current-induced microwave emission with a large frequency tunability of 0.22 GHz/mA. Compared to the conventional approaches that involve a step of defining nanoscale elements by means of electron beam lithography, which is not readily available for many groups, our strategy for STO fabrication does not require the sophisticated equipment (~ million dollars per unit and expensive lithography resist, while being cost-effective and easy to use in laboratory level. This will accelerate efforts to implement STO into on-chip integrated high-radio frequency applications.

Dual aperture dipole magnet with second harmonic component

Science.gov (United States)

Praeg, Walter F.

1985-01-01

An improved dual aperture dipole electromagnet includes a second-harmonic frequency magnetic guide field winding which surrounds first harmonic frequency magnetic guide field windings associated with each aperture. The second harmonic winding and the first harmonic windings cooperate to produce resultant magnetic waveforms in the apertures which have extended acceleration and shortened reset portions of electromagnet operation.

A low cost high resolution pattern generator for electron-beam lithography

International Nuclear Information System (INIS)

Pennelli, G.; D'Angelo, F.; Piotto, M.; Barillaro, G.; Pellegrini, B.

2003-01-01

A simple, very low cost pattern generator for electron-beam lithography is presented. When it is applied to a scanning electron microscope, the system allows a high precision positioning of the beam for lithography of very small structures. Patterns are generated by a suitable software implemented on a personal computer, by using very simple functions, allowing an easy development of new writing strategies for a great adaptability to different user necessities. Hardware solutions, as optocouplers and battery supply, have been implemented for reduction of noise and disturbs on the voltages controlling the positioning of the beam

Feasibility of multi-walled carbon nanotube probes in AFM anodization lithography

International Nuclear Information System (INIS)

Choi, Ji Sun; Bae, Sukjong; Ahn, Sang Jung; Kim, Dal Hyun; Jung, Ki Young; Han, Cheolsu; Chung, Chung Choo; Lee, Haiwon

2007-01-01

Multi-walled carbon nanotube (CNT) tips were used in atomic force microscope (AFM) anodization lithography to investigate their advantages over conventional tips. The CNT tip required a larger threshold voltage than the mother silicon tip due to the Schottky barrier at the CNT-Si interface. Current-to-voltage curves distinguished the junction property between CNTs and mother tips. The CNT-platinum tip, which is more conductive than the CNT-silicon tip, showed promising results for AFM anodization lithography. Finally, the nanostructures with high aspect ratio were fabricated using a pulsed bias voltage technique as well as the CNT tip

47 CFR 25.134 - Licensing provisions of Very Small Aperture Terminal (VSAT) and C-band Small Aperture Terminal...

Science.gov (United States)

2010-10-01

... 47 Telecommunication 2 2010-10-01 2010-10-01 false Licensing provisions of Very Small Aperture Terminal (VSAT) and C-band Small Aperture Terminal (CSAT) networks. 25.134 Section 25.134 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES SATELLITE COMMUNICATIONS...

EUV lithography : historical perspective and road ahead

NARCIS (Netherlands)

Banine, V.Y.

2014-01-01

Lithography, in the form of carved type printing, can be dated as far back as the 3rd century AD. Starting from the 19th century it played a major role as the basis for dissemination and preservation of knowledge in the form of printed books, maps, newspapers, etc. In the mid 20th century, with the

Report of the second workshop on synchrotron radiation sources for x-ray lithography

International Nuclear Information System (INIS)

Barton, M.Q.; Craft, B.; Williams, G.P.

1986-01-01

The reported workshop is part of an effort to implement a US-based x-ray lithography program. Presentations include designs for three storage rings (one superconducting and two conventional) and an overview of a complete lithography program. The background of the effort described, the need for synchrotron radiation, and the international competition in the area are discussed briefly. The technical feasibility of x-ray lithography is discussed, and synchrotron performance specifications and construction options are given, as well as a near-term plan. It is recommended that a prototype synchrotron source be built as soon as possible, and that a research and development plan on critical technologies which could improve cost effectiveness of the synchrotron source be established. It is further recommended that a small number of second generation prototype synchrotrons be distributed to IC manufacturing centers to expedite commercialization

Dynamic Properties of Individual Carbon Nanotube Emitters for Maskless Lithography

National Research Council Canada - National Science Library

Ribaya, Bryan P; Niemann, Darrell L; Makarewicz, Joseph; Gunther, Norman G; Nguyen, Cattien V; Rahman, Mahmud

2008-01-01

.... The individual CNT's low electron beam energy spread and high brightness values make it particularly desirable for advanced applications such as electron microscopy and electron beam lithography...

Biocompatibility of hydroxyapatite scaffolds processed by lithography-based additive manufacturing.

Science.gov (United States)

Tesavibul, Passakorn; Chantaweroad, Surapol; Laohaprapanon, Apinya; Channasanon, Somruethai; Uppanan, Paweena; Tanodekaew, Siriporn; Chalermkarnnon, Prasert; Sitthiseripratip, Kriskrai

2015-01-01

The fabrication of hydroxyapatite scaffolds for bone tissue engineering applications by using lithography-based additive manufacturing techniques has been introduced due to the abilities to control porous structures with suitable resolutions. In this research, the use of hydroxyapatite cellular structures, which are processed by lithography-based additive manufacturing machine, as a bone tissue engineering scaffold was investigated. The utilization of digital light processing system for additive manufacturing machine in laboratory scale was performed in order to fabricate the hydroxyapatite scaffold, of which biocompatibilities were eventually evaluated by direct contact and cell-culturing tests. In addition, the density and compressive strength of the scaffolds were also characterized. The results show that the hydroxyapatite scaffold at 77% of porosity with 91% of theoretical density and 0.36 MPa of the compressive strength are able to be processed. In comparison with a conventionally sintered hydroxyapatite, the scaffold did not present any cytotoxic signs while the viability of cells at 95.1% was reported. After 14 days of cell-culturing tests, the scaffold was able to be attached by pre-osteoblasts (MC3T3-E1) leading to cell proliferation and differentiation. The hydroxyapatite scaffold for bone tissue engineering was able to be processed by the lithography-based additive manufacturing machine while the biocompatibilities were also confirmed.

Transport of Particle Swarms Through Variable Aperture Fractures

Science.gov (United States)

Boomsma, E.; Pyrak-Nolte, L. J.

2012-12-01

Particle transport through fractured rock is a key concern with the increased use of micro- and nano-size particles in consumer products as well as from other activities in the sub- and near surface (e.g. mining, industrial waste, hydraulic fracturing, etc.). While particle transport is often studied as the transport of emulsions or dispersions, particles may also enter the subsurface from leaks or seepage that lead to particle swarms. Swarms are drop-like collections of millions of colloidal-sized particles that exhibit a number of unique characteristics when compared to dispersions and emulsions. Any contaminant or engineered particle that forms a swarm can be transported farther, faster, and more cohesively in fractures than would be expected from a traditional dispersion model. In this study, the effects of several variable aperture fractures on colloidal swarm cohesiveness and evolution were studied as a swarm fell under gravity and interacted with the fracture walls. Transparent acrylic was used to fabricate synthetic fracture samples with (1) a uniform aperture, (2) a converging region followed by a uniform region (funnel shaped), (3) a uniform region followed by a diverging region (inverted funnel), and (4) a cast of a an induced fracture from a carbonate rock. All of the samples consisted of two blocks that measured 100 x 100 x 50 mm. The minimum separation between these blocks determined the nominal aperture (0.5 mm to 20 mm). During experiments a fracture was fully submerged in water and swarms were released into it. The swarms consisted of a dilute suspension of 3 micron polystyrene fluorescent beads (1% by mass) with an initial volume of 5μL. The swarms were illuminated with a green (525 nm) LED array and imaged optically with a CCD camera. The variation in fracture aperture controlled swarm behavior. Diverging apertures caused a sudden loss of confinement that resulted in a rapid change in the swarm's shape as well as a sharp increase in its velocity

Fractal characteristics of fracture roughness and aperture data

International Nuclear Information System (INIS)

Kumar, S.; Boernge, J.

1991-05-01

In this study mathematical expressions are developed for the characteristics of apertures between rough surfaces. It has shown that the correlation between the opposite surfaces influences the aperture properties and different models are presented for these different surface correlations. Fracture and apertures profiles measured from intact fractures are evaluated and it is found that they qualitatively follow the mathematically predicted trends

From 2D Lithography to 3D Patterning

NARCIS (Netherlands)

Van Zeijl, H.W.; Wei, J.; Shen, C.; Verhaar, T.M.; Sarro, P.M.

2010-01-01

Lithography as developed for IC device fabrication is a high volume high accuracy patterning technology with strong 2 dimensional (2D) characteristics. This 2D nature makes it a challenge to integrate this technology in a 3 dimensional (3D) manufacturing environment. This article addresses the

Pattern Definition with DUV-Lithography at DTU Danchip

DEFF Research Database (Denmark)

Keil, Matthias; Khomtchenko, Elena; Nyholt, Henrik

2014-01-01

Deep ultra violet (DUV) illumination generated with the help of a KrF laser can be utilized to produce components having sizes of some hundreds of nanometers. This light source with its 248nm wavelength is exploited in the DUV-lithography equipment at DTU Danchip in order to fill the resolution gap...... - as shown in fig. 2 - utilizing the possibility of beam shape variations that enables to adapt the resolution and the depth of focus of the stepper to the requirements of the fabricated device. However, generally the highest achievable resolution is dependent on the pattern type - as e.g. pillar, line...... or hole comprising patterns -, its symmetry and the separations between the different structures. The projection lithography tool FPA-3000EX4 from Canon (max. NA=0,6; 1:5 reduction) produces patterns on the wafer within a maximum chip area of 22x22mm2 that can be stitched together with an accuracy of 3σ...

Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography

International Nuclear Information System (INIS)

Li, Li; Zhang, Ziang; Yu, Miao; Song, Zhengxun; Weng, Zhankun; Wang, Zuobin; Li, Wenjun; Wang, Dapeng; Zhao, Le; Peng, Kuiqing

2015-01-01

Although the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arrays with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ 0  = 1064 nm. The minimal feature size is only several nanometers (sub λ 0 /100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser

Calibration of circular aperture area using vision probe at inmetro

Directory of Open Access Journals (Sweden)

Costa Pedro Bastos

2016-01-01

Full Text Available Circular aperture areas are standards of high importance for the realization of photometric and radiometric measurements, where the accuracy of these measures is related to the accuracy of the circular aperture area calibrations. In order to attend the requirement for traceability was developed in Brazilian metrology institute, a methodology for circular aperture area measurement as requirements from the radiometric and photometric measurements. In the developed methodology apertures are measured by non-contact measurement through images of the aperture edges captured by a camera. These images are processed using computer vision techniques and then the values of the circular aperture area are determined.

Synthetic aperture radar: principles and applications

International Nuclear Information System (INIS)

Khan, N.A.; Yahya, K.M.

2003-01-01

In this paper an introduction to synthetic aperture radar is presented. Synthetic aperture radar is a relatively new remote sensing platform and the technology has matured a lot in the last two decades. This paper introduces the concepts behind SAR principles as well as the major areas where this new technology has shown additional information. (author)

Soft-X-Ray Projection Lithography Using a High-Repetition-Rate Laser-Induced X-Ray Source for Sub-100 Nanometer Lithography Processes

NARCIS (Netherlands)

E. Louis,; F. Bijkerk,; Shmaenok, L.; Voorma, H. J.; van der Wiel, M. J.; Schlatmann, R.; Verhoeven, J.; van der Drift, E. W. J. M.; Romijn, J.; Rousseeuw, B. A. C.; Voss, F.; Desor, R.; Nikolaus, B.

1993-01-01

In this paper we present the status of a joint development programme on soft x-ray projection lithography (SXPL) integrating work on high brightness laser plasma sources. fabrication of multilayer x-ray mirrors. and patterning of reflection masks. We are in the process of optimization of a

Fast-neutron, coded-aperture imager

International Nuclear Information System (INIS)

Woolf, Richard S.; Phlips, Bernard F.; Hutcheson, Anthony L.; Wulf, Eric A.

2015-01-01

This work discusses a large-scale, coded-aperture imager for fast neutrons, building off a proof-of concept instrument developed at the U.S. Naval Research Laboratory (NRL). The Space Science Division at the NRL has a heritage of developing large-scale, mobile systems, using coded-aperture imaging, for long-range γ-ray detection and localization. The fast-neutron, coded-aperture imaging instrument, designed for a mobile unit (20 ft. ISO container), consists of a 32-element array of 15 cm×15 cm×15 cm liquid scintillation detectors (EJ-309) mounted behind a 12×12 pseudorandom coded aperture. The elements of the aperture are composed of 15 cm×15 cm×10 cm blocks of high-density polyethylene (HDPE). The arrangement of the aperture elements produces a shadow pattern on the detector array behind the mask. By measuring of the number of neutron counts per masked and unmasked detector, and with knowledge of the mask pattern, a source image can be deconvolved to obtain a 2-d location. The number of neutrons per detector was obtained by processing the fast signal from each PMT in flash digitizing electronics. Digital pulse shape discrimination (PSD) was performed to filter out the fast-neutron signal from the γ background. The prototype instrument was tested at an indoor facility at the NRL with a 1.8-μCi and 13-μCi 252Cf neutron/γ source at three standoff distances of 9, 15 and 26 m (maximum allowed in the facility) over a 15-min integration time. The imaging and detection capabilities of the instrument were tested by moving the source in half- and one-pixel increments across the image plane. We show a representative sample of the results obtained at one-pixel increments for a standoff distance of 9 m. The 1.8-μCi source was not detected at the 26-m standoff. In order to increase the sensitivity of the instrument, we reduced the fastneutron background by shielding the top, sides and back of the detector array with 10-cm-thick HDPE. This shielding configuration led

Fast-neutron, coded-aperture imager

Energy Technology Data Exchange (ETDEWEB)

Woolf, Richard S., E-mail: richard.woolf@nrl.navy.mil; Phlips, Bernard F., E-mail: bernard.phlips@nrl.navy.mil; Hutcheson, Anthony L., E-mail: anthony.hutcheson@nrl.navy.mil; Wulf, Eric A., E-mail: eric.wulf@nrl.navy.mil

2015-06-01

This work discusses a large-scale, coded-aperture imager for fast neutrons, building off a proof-of concept instrument developed at the U.S. Naval Research Laboratory (NRL). The Space Science Division at the NRL has a heritage of developing large-scale, mobile systems, using coded-aperture imaging, for long-range γ-ray detection and localization. The fast-neutron, coded-aperture imaging instrument, designed for a mobile unit (20 ft. ISO container), consists of a 32-element array of 15 cm×15 cm×15 cm liquid scintillation detectors (EJ-309) mounted behind a 12×12 pseudorandom coded aperture. The elements of the aperture are composed of 15 cm×15 cm×10 cm blocks of high-density polyethylene (HDPE). The arrangement of the aperture elements produces a shadow pattern on the detector array behind the mask. By measuring of the number of neutron counts per masked and unmasked detector, and with knowledge of the mask pattern, a source image can be deconvolved to obtain a 2-d location. The number of neutrons per detector was obtained by processing the fast signal from each PMT in flash digitizing electronics. Digital pulse shape discrimination (PSD) was performed to filter out the fast-neutron signal from the γ background. The prototype instrument was tested at an indoor facility at the NRL with a 1.8-μCi and 13-μCi 252Cf neutron/γ source at three standoff distances of 9, 15 and 26 m (maximum allowed in the facility) over a 15-min integration time. The imaging and detection capabilities of the instrument were tested by moving the source in half- and one-pixel increments across the image plane. We show a representative sample of the results obtained at one-pixel increments for a standoff distance of 9 m. The 1.8-μCi source was not detected at the 26-m standoff. In order to increase the sensitivity of the instrument, we reduced the fastneutron background by shielding the top, sides and back of the detector array with 10-cm-thick HDPE. This shielding configuration led

Multi-antenna synthetic aperture radar

CERN Document Server

Wang, Wen-Qin

2013-01-01

Synthetic aperture radar (SAR) is a well-known remote sensing technique, but conventional single-antenna SAR is inherently limited by the minimum antenna area constraint. Although there are still technical issues to overcome, multi-antenna SAR offers many benefits, from improved system gain to increased degrees-of-freedom and system flexibility. Multi-Antenna Synthetic Aperture Radar explores the potential and challenges of using multi-antenna SAR in microwave remote sensing applications. These applications include high-resolution imaging, wide-swath remote sensing, ground moving target indica

An electron undulating ring for VLSI lithography

International Nuclear Information System (INIS)

Tomimasu, T.; Mikado, T.; Noguchi, T.; Sugiyama, S.; Yamazaki, T.

1985-01-01

The development of the ETL storage ring ''TERAS'' as an undulating ring has been continued to achieve a wide area exposure of synchrotron radiation (SR) in VLSI lithography. Stable vertical and horizontal undulating motions of stored beams are demonstrated around a horizontal design orbit of TERAS, using two small steering magnets of which one is used for vertical undulating and another for horizontal one. Each steering magnet is inserted into one of the periodic configulation of guide field elements. As one of useful applications of undulaing electron beams, a vertically wide exposure of SR has been demonstrated in the SR lithography. The maximum vertical deviation from the design orbit nCcurs near the steering magnet. The maximum vertical tilt angle of the undulating beam near the nodes is about + or - 2mrad for a steering magnetic field of 50 gauss. Another proposal is for hith-intensity, uniform and wide exposure of SR from a wiggler installed in TERAS, using vertical and horizontal undulating motions of stored beams. A 1.4 m long permanent magnet wiggler has been installed for this purpose in this April

Dynamic metamaterial aperture for microwave imaging

International Nuclear Information System (INIS)

Sleasman, Timothy; Imani, Mohammadreza F.; Gollub, Jonah N.; Smith, David R.

2015-01-01

We present a dynamic metamaterial aperture for use in computational imaging schemes at microwave frequencies. The aperture consists of an array of complementary, resonant metamaterial elements patterned into the upper conductor of a microstrip line. Each metamaterial element contains two diodes connected to an external control circuit such that the resonance of the metamaterial element can be damped by application of a bias voltage. Through applying different voltages to the control circuit, select subsets of the elements can be switched on to create unique radiation patterns that illuminate the scene. Spatial information of an imaging domain can thus be encoded onto this set of radiation patterns, or measurements, which can be processed to reconstruct the targets in the scene using compressive sensing algorithms. We discuss the design and operation of a metamaterial imaging system and demonstrate reconstructed images with a 10:1 compression ratio. Dynamic metamaterial apertures can potentially be of benefit in microwave or millimeter wave systems such as those used in security screening and through-wall imaging. In addition, feature-specific or adaptive imaging can be facilitated through the use of the dynamic aperture

Dynamic metamaterial aperture for microwave imaging

Energy Technology Data Exchange (ETDEWEB)

Sleasman, Timothy; Imani, Mohammadreza F.; Gollub, Jonah N.; Smith, David R. [Center for Metamaterials and Integrated Plasmonics, Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina, 27708 (United States)

2015-11-16

We present a dynamic metamaterial aperture for use in computational imaging schemes at microwave frequencies. The aperture consists of an array of complementary, resonant metamaterial elements patterned into the upper conductor of a microstrip line. Each metamaterial element contains two diodes connected to an external control circuit such that the resonance of the metamaterial element can be damped by application of a bias voltage. Through applying different voltages to the control circuit, select subsets of the elements can be switched on to create unique radiation patterns that illuminate the scene. Spatial information of an imaging domain can thus be encoded onto this set of radiation patterns, or measurements, which can be processed to reconstruct the targets in the scene using compressive sensing algorithms. We discuss the design and operation of a metamaterial imaging system and demonstrate reconstructed images with a 10:1 compression ratio. Dynamic metamaterial apertures can potentially be of benefit in microwave or millimeter wave systems such as those used in security screening and through-wall imaging. In addition, feature-specific or adaptive imaging can be facilitated through the use of the dynamic aperture.

Microfabrication of pre-aligned fiber bundle couplers using ultraviolet lithography of SU-8

OpenAIRE

Yang, Ren; Soper, Steven A.; Wang, Wanjun

2006-01-01

This paper describes the design, microfabrication and testing of a pre-aligned array of fiber couplers using direct UV-lithography of SU-8. The fiber coupler array includes an out-of-plane refractive microlens array and two fiberport collimator arrays. With the optical axis of the pixels parallel to the substrate, each pixel of the microlens array can be pre-aligned with the corresponding pixels of the fiberport collimator array as defined by the lithography mask design. This out-of-plane pol...

Integrated electrochromic aperture diaphragm

Science.gov (United States)

Deutschmann, T.; Oesterschulze, E.

2014-05-01

In the last years, the triumphal march of handheld electronics with integrated cameras has opened amazing fields for small high performing optical systems. For this purpose miniaturized iris apertures are of practical importance because they are essential to control both the dynamic range of the imaging system and the depth of focus. Therefore, we invented a micro optical iris based on an electrochromic (EC) material. This material changes its absorption in response to an applied voltage. A coaxial arrangement of annular rings of the EC material is used to establish an iris aperture without need of any mechanical moving parts. The advantages of this device do not only arise from the space-saving design with a thickness of the device layer of 50μm. But it also benefits from low power consumption. In fact, its transmission state is stable in an open circuit, phrased memory effect. Only changes of the absorption require a voltage of up to 2 V. In contrast to mechanical iris apertures the absorption may be controlled on an analog scale offering the opportunity for apodization. These properties make our device the ideal candidate for battery powered and space-saving systems. We present optical measurements concerning control of the transmitted intensity and depth of focus, and studies dealing with switching times, light scattering, and stability. While the EC polymer used in this study still has limitations concerning color and contrast, the presented device features all functions of an iris aperture. In contrast to conventional devices it offers some special features. Owing to the variable chemistry of the EC material, its spectral response may be adjusted to certain applications like color filtering in different spectral regimes (UV, optical range, infrared). Furthermore, all segments may be switched individually to establish functions like spatial Fourier filtering or lateral tunable intensity filters.

Fast-neutron, coded-aperture imager

Science.gov (United States)

Woolf, Richard S.; Phlips, Bernard F.; Hutcheson, Anthony L.; Wulf, Eric A.

2015-06-01

This work discusses a large-scale, coded-aperture imager for fast neutrons, building off a proof-of concept instrument developed at the U.S. Naval Research Laboratory (NRL). The Space Science Division at the NRL has a heritage of developing large-scale, mobile systems, using coded-aperture imaging, for long-range γ-ray detection and localization. The fast-neutron, coded-aperture imaging instrument, designed for a mobile unit (20 ft. ISO container), consists of a 32-element array of 15 cm×15 cm×15 cm liquid scintillation detectors (EJ-309) mounted behind a 12×12 pseudorandom coded aperture. The elements of the aperture are composed of 15 cm×15 cm×10 cm blocks of high-density polyethylene (HDPE). The arrangement of the aperture elements produces a shadow pattern on the detector array behind the mask. By measuring of the number of neutron counts per masked and unmasked detector, and with knowledge of the mask pattern, a source image can be deconvolved to obtain a 2-d location. The number of neutrons per detector was obtained by processing the fast signal from each PMT in flash digitizing electronics. Digital pulse shape discrimination (PSD) was performed to filter out the fast-neutron signal from the γ background. The prototype instrument was tested at an indoor facility at the NRL with a 1.8-μCi and 13-μCi 252Cf neutron/γ source at three standoff distances of 9, 15 and 26 m (maximum allowed in the facility) over a 15-min integration time. The imaging and detection capabilities of the instrument were tested by moving the source in half- and one-pixel increments across the image plane. We show a representative sample of the results obtained at one-pixel increments for a standoff distance of 9 m. The 1.8-μCi source was not detected at the 26-m standoff. In order to increase the sensitivity of the instrument, we reduced the fastneutron background by shielding the top, sides and back of the detector array with 10-cm-thick HDPE. This shielding configuration led

Congenital pyriform aperture stenosis

International Nuclear Information System (INIS)

Osovsky, Micky; Aizer-Danon, Anat; Horev, Gadi; Sirota, Lea

2007-01-01

Nasal airway obstruction is a potentially life-threatening condition in the newborn. Neonates are obligatory nasal breathers. The pyriform aperture is the narrowest, most anterior bony portion of the nasal airway, and a decrease in its cross-sectional area will significantly increase nasal airway resistance. Congenital nasal pyriform aperture stenosis (CNPAS) is a rare, unusual form of nasal obstruction. It should be considered in the differential diagnosis of any neonate or infant with signs and symptoms of upper airway compromise. It is important to differentiate this level of obstruction from the more common posterior choanal stenosis or atresia. CNPAS presents with symptoms of nasal airway obstruction, which are often characterized by episodic apnea and cyclical cyanosis. (orig.)

Extended Aperture Photometry of K2 RR Lyrae stars

Science.gov (United States)

Plachy, Emese; Klagyivik, Péter; Molnár, László; Sódor, Ádám; Szabó, Róbert

2017-10-01

We present the method of the Extended Aperture Photometry (EAP) that we applied on K2 RR Lyrae stars. Our aim is to minimize the instrumental variations of attitude control maneuvers by using apertures that cover the positional changes in the field of view thus contain the stars during the whole observation. We present example light curves that we compared to the light curves from the K2 Systematics Correction (K2SC) pipeline applied on the automated Single Aperture Photometry (SAP) and on the Pre-search Data Conditioning Simple Aperture Photometry (PDCSAP) data.

Structure formation in atom lithography using geometric collimation

NARCIS (Netherlands)

Meijer, T.; Beardmore, J.P.; Fabrie, C.G.C.H.M.; van Lieshout, J.P.; Notermans, R.P.M.J.W.; Sang, R.T.; Vredenbregt, E.J.D.; Leeuwen, van K.A.H.

2011-01-01

Atom lithography uses standing wave light fields as arrays of lenses to focus neutral atom beams into line patterns on a substrate. Laser cooled atom beams are commonly used, but an atom beam source with a small opening placed at a large distance from a substrate creates atom beams which are locally

Combined electron beam and UV lithography in SU-8

DEFF Research Database (Denmark)

Gersborg-Hansen, Morten; Thamdrup, Lasse Højlund; Mironov, Andrej

2007-01-01

We present combined electron beam and UV lithography (CEUL) in SU-8 as a fast and flexible lithographic technique for prototyping of functional polymer devices and pattern transfer applications. CEUL is a lithographic technique suitable for defining both micrometer and nanometer scale features...

Aperture meter for the Large Hadron Collider

International Nuclear Information System (INIS)

Mueller, G.J.; Fuchsberger, K.; Redaelli, S.

2012-01-01

The control of the high intensity beams of the CERN Large Hadron Collider (LHC) is particular challenging and requires a good modeling of the machine and monitoring of various machine parameters. During operation it is crucial to ensure a minimal distance between the beam edge and the aperture of sensitive equipment, e.g. the superconducting magnets, which in all cases must be in the shadow of the collimator's that protect the machine. Possible dangerous situations must be detected as soon as possible. In order to provide the operator with information about the current machine bottlenecks an aperture meter application was developed based on the LHC online modeling tool-chain. The calculation of available free aperture takes into account the best available optics and aperture model as well as the relevant beam measurements. This paper describes the design and integration of this application into the control environment and presents results of the usage in daily operation and from validation measurements. (authors)

High-contrast imaging with an arbitrary aperture: Active compensation of aperture discontinuities

International Nuclear Information System (INIS)

Pueyo, Laurent; Norman, Colin

2013-01-01

We present a new method to achieve high-contrast images using segmented and/or on-axis telescopes. Our approach relies on using two sequential deformable mirrors (DMs) to compensate for the large amplitude excursions in the telescope aperture due to secondary support structures and/or segment gaps. In this configuration the parameter landscape of DM surfaces that yield high-contrast point-spread functions is not linear, and nonlinear methods are needed to find the true minimum in the optimization topology. We solve the highly nonlinear Monge-Ampere equation that is the fundamental equation describing the physics of phase-induced amplitude modulation. We determine the optimum configuration for our two sequential DM system and show that high-throughput and high-contrast solutions can be achieved using realistic surface deformations that are accessible using existing technologies. We name this process Active Compensation of Aperture Discontinuities (ACAD). We show that for geometries similar to the James Webb Space Telescope, ACAD can attain at least 10 –7 in contrast and an order of magnitude higher for both the future extremely large telescopes and on-axis architectures reminiscent of the Hubble Space Telescope. We show that the converging nonlinear mappings resulting from our DM shapes actually damp near-field diffraction artifacts in the vicinity of the discontinuities. Thus, ACAD actually lowers the chromatic ringing due to diffraction by segment gaps and struts while not amplifying the diffraction at the aperture edges beyond the Fresnel regime. This outer Fresnel ringing can be mitigated by properly designing the optical system. Consequently, ACAD is a true broadband solution to the problem of high-contrast imaging with segmented and/or on-axis apertures. We finally show that once the nonlinear solution is found, fine tuning with linear methods used in wavefront control can be applied to further contrast by another order of magnitude. Generally speaking, the

Imbalance aware lithography hotspot detection: a deep learning approach

Science.gov (United States)

Yang, Haoyu; Luo, Luyang; Su, Jing; Lin, Chenxi; Yu, Bei

2017-07-01

With the advancement of very large scale integrated circuits (VLSI) technology nodes, lithographic hotspots become a serious problem that affects manufacture yield. Lithography hotspot detection at the post-OPC stage is imperative to check potential circuit failures when transferring designed patterns onto silicon wafers. Although conventional lithography hotspot detection methods, such as machine learning, have gained satisfactory performance, with the extreme scaling of transistor feature size and layout patterns growing in complexity, conventional methodologies may suffer from performance degradation. For example, manual or ad hoc feature extraction in a machine learning framework may lose important information when predicting potential errors in ultra-large-scale integrated circuit masks. We present a deep convolutional neural network (CNN) that targets representative feature learning in lithography hotspot detection. We carefully analyze the impact and effectiveness of different CNN hyperparameters, through which a hotspot-detection-oriented neural network model is established. Because hotspot patterns are always in the minority in VLSI mask design, the training dataset is highly imbalanced. In this situation, a neural network is no longer reliable, because a trained model with high classification accuracy may still suffer from a high number of false negative results (missing hotspots), which is fatal in hotspot detection problems. To address the imbalance problem, we further apply hotspot upsampling and random-mirror flipping before training the network. Experimental results show that our proposed neural network model achieves comparable or better performance on the ICCAD 2012 contest benchmark compared to state-of-the-art hotspot detectors based on deep or representative machine leaning.

Durable diamond-like carbon templates for UV nanoimprint lithography

International Nuclear Information System (INIS)

Tao, L; Ramachandran, S; Nelson, C T; Overzet, L J; Goeckner, M; Lee, G; Hu, W; Lin, M; Willson, C G; Wu, W

2008-01-01

The interaction between resist and template during the separation process after nanoimprint lithography (NIL) can cause the formation of defects and damage to the templates and resist patterns. To alleviate these problems, fluorinated self-assembled monolayers (F-SAMs, i.e. tridecafluoro-1,1,2,2,tetrahydrooctyl trichlorosilane or FDTS) have been employed as template release coatings. However, we find that the FDTS coating undergoes irreversible degradation after only 10 cycles of UV nanoimprint processes with SU-8 resist. The degradation includes a 28% reduction in surface F atoms and significant increases in the surface roughness. In this paper, diamond-like carbon (DLC) films were investigated as an alternative material not only for coating but also for direct fabrication of nanoimprint templates. DLC films deposited on quartz templates in a plasma enhanced chemical vapor deposition system are shown to have better chemical and physical stability than FDTS. After the same 10 cycles of UV nanoimprints, the surface composition as well as the roughness of DLC films were found to be unchanged. The adhesion energy between the DLC surface and SU-8 is found to be smaller than that of FDTS despite the slightly higher total surface energy of DLC. DLC templates with 40 nm features were fabricated using e-beam lithography followed by Cr lift-off and reactive ion etching. UV nanoimprinting using the directly patterned DLC templates in SU-8 resist demonstrates good pattern transfer fidelity and easy template-resist separation. These results indicate that DLC is a promising material for fabricating durable templates for UV nanoimprint lithography

Effects of synchrotron radiation spectrum energy on polymethyl methacrylate photosensitivity to deep x-ray lithography

International Nuclear Information System (INIS)

Mekaru, Harutaka; Utsumi, Yuichi; Hattori, Tadashi

2003-01-01

Since X-ray lithography requires a high photon flux to achieve deep resist exposure, a synchrotron radiation beam, which is not monochromatized, is generally used as a light source. If the synchrotron radiation beam is monochromatized, photon flux will decrease rapidly. Because of this reason, the wavelength dependence of the resist sensitivity has not been investigated for deep X-ray lithography. Measuring the spectrum of a white beam with a Si solid-state detector (SSD) is difficult because a white beam has a high intensity and an SSD has a high sensitivity. We were able to measure the spectrum and the photocurrent of a white beam from a beam line used for deep X-ray lithography by keeping the ring current below 0.05 mA. We evaluated the characteristics of the output beam based on the measured spectrum and photocurrent, and used them to investigate the relationship between the total exposure energy and the dose-processing depth with polymethyl methacrylate (PMMA). We found that it is possible to guess the processing depth of PMMA from the total exposure energy in deep X-ray lithography. (author)

Deep X-ray lithography for the fabrication of microstructures at ELSA

Energy Technology Data Exchange (ETDEWEB)

Pantenburg, F.J. E-mail: pantenburg@imt.fzk.de; Mohr, J

2001-07-21

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 {mu}m are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described.

Deep X-ray lithography for the fabrication of microstructures at ELSA

Science.gov (United States)

Pantenburg, F. J.; Mohr, J.

2001-07-01

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 μm are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described.

Deep X-ray lithography for the fabrication of microstructures at ELSA

International Nuclear Information System (INIS)

Pantenburg, F.J.; Mohr, J.

2001-01-01

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 μm are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described

Deep X-ray lithography for the fabrication of microstructures at ELSA

CERN Document Server

Pantenburg, F J

2001-01-01

Two beamlines at the Electron Stretcher Accelerator (ELSA) of Bonn University are dedicated for the production of microstructures by deep X-ray lithography with synchrotron radiation. They are equipped with state-of-the-art X-ray scanners, maintained and used by Forschungszentrum Karlsruhe. Polymer microstructure heights between 30 and 3000 mu m are manufactured regularly for research and industrial projects. This requires different characteristic energies. Therefore, ELSA operates routinely at 1.6, 2.3 and 2.7 GeV, for high-resolution X-ray mask fabrication, deep and ultra-deep X-ray lithography, respectively. The experimental setup, as well as the structure quality of deep and ultra deep X-ray lithographic microstructures are described.

The application of phase grating to CLM technology for the sub-65nm node optical lithography

Science.gov (United States)

Yoon, Gi-Sung; Kim, Sung-Hyuck; Park, Ji-Soong; Choi, Sun-Young; Jeon, Chan-Uk; Shin, In-Kyun; Choi, Sung-Woon; Han, Woo-Sung

2005-06-01

As a promising technology for sub-65nm node optical lithography, CLM(Chrome-Less Mask) technology among RETs(Resolution Enhancement Techniques) for low k1 has been researched worldwide in recent years. CLM has several advantages, such as relatively simple manufacturing process and competitive performance compared to phase-edge PSM's. For the low-k1 lithography, we have researched CLM technique as a good solution especially for sub-65nm node. As a step for developing the sub-65nm node optical lithography, we have applied CLM technology in 80nm-node lithography with mesa and trench method. From the analysis of the CLM technology in the 80nm lithography, we found that there is the optimal shutter size for best performance in the technique, the increment of wafer ADI CD varied with pattern's pitch, and a limitation in patterning various shapes and size by OPC dead-zone - OPC dead-zone in CLM technique is the specific region of shutter size that dose not make the wafer CD increased more than a specific size. And also small patterns are easily broken, while fabricating the CLM mask in mesa method. Generally, trench method has better optical performance than mesa. These issues have so far restricted the application of CLM technology to a small field. We approached these issues with 3-D topographic simulation tool and found that the issues could be overcome by applying phase grating in trench-type CLM. With the simulation data, we made some test masks which had many kinds of patterns with many different conditions and analyzed their performance through AIMS fab 193 and exposure on wafer. Finally, we have developed the CLM technology which is free of OPC dead-zone and pattern broken in fabrication process. Therefore, we can apply the CLM technique into sub-65nm node optical lithography including logic devices.

Extended Aperture Photometry of K2 RR Lyrae stars

Directory of Open Access Journals (Sweden)

Plachy Emese

2017-01-01

Full Text Available We present the method of the Extended Aperture Photometry (EAP that we applied on K2 RR Lyrae stars. Our aim is to minimize the instrumental variations of attitude control maneuvers by using apertures that cover the positional changes in the field of view thus contain the stars during the whole observation. We present example light curves that we compared to the light curves from the K2 Systematics Correction (K2SC pipeline applied on the automated Single Aperture Photometry (SAP and on the Pre-search Data Conditioning Simple Aperture Photometry (PDCSAP data.

Influence of coma aberration on aperture averaged scintillations in oceanic turbulence

Science.gov (United States)

Luo, Yujuan; Ji, Xiaoling; Yu, Hong

2018-01-01

The influence of coma aberration on aperture averaged scintillations in oceanic turbulence is studied in detail by using the numerical simulation method. In general, in weak oceanic turbulence, the aperture averaged scintillation can be effectively suppressed by means of the coma aberration, and the aperture averaged scintillation decreases as the coma aberration coefficient increases. However, in moderate and strong oceanic turbulence the influence of coma aberration on aperture averaged scintillations can be ignored. In addition, the aperture averaged scintillation dominated by salinity-induced turbulence is larger than that dominated by temperature-induced turbulence. In particular, it is shown that for coma-aberrated Gaussian beams, the behavior of aperture averaged scintillation index is quite different from the behavior of point scintillation index, and the aperture averaged scintillation index is more suitable for characterizing scintillations in practice.

Large-aperture hybrid photo-detector

International Nuclear Information System (INIS)

Kawai, Y.; Nakayama, H.; Kusaka, A.; Kakuno, H.; Abe, T.; Iwasaki, M.; Aihara, H.; Tanaka, M.; Shiozawa, M.; Kyushima, H.; Suyama, M.

2007-01-01

We have developed the first complete large-aperture (13-inch diameter) hybrid photo-detector (HPD). The withstanding voltage problem has been overcome and we were able to attain an HPD operating voltage of +20 kV. Adoption of our newly developed backside illumination avalanche diode (AD) was also critical in successfully countering the additional problem of an increase in AD leakage after the activation process. We observed single photon signal timing jitter of under 450 ps in FWHM, electron transit time of ∼12 ns, and clear pulse height separation up to several photoelectron peaks, all greatly superior to the performance of any conventional large-aperture photomultiplier tubes (PMTs). In addition, our HPD has a much simpler structure than conventional large-aperture PMTs, which simplifies mass production and lowers manufacturing cost. We believe that these attributes position our HPD as the most suitable photo-detector for the next generation mega-ton class water-Cherenkov detector, which is expected to be more than 20x larger than the Super-Kamiokande (SK) detector

Software-based data path for raster-scanned multi-beam mask lithography

Science.gov (United States)

Rajagopalan, Archana; Agarwal, Ankita; Buck, Peter; Geller, Paul; Hamaker, H. Christopher; Rao, Nagswara

2016-10-01

According to the 2013 SEMATECH Mask Industry Survey,i roughly half of all photomasks are produced using laser mask pattern generator ("LMPG") lithography. LMPG lithography can be used for all layers at mature technology nodes, and for many non-critical and semi-critical masks at advanced nodes. The extensive use of multi-patterning at the 14-nm node significantly increases the number of critical mask layers, and the transition in wafer lithography from positive tone resist to negative tone resist at the 14-nm design node enables the switch from advanced binary masks back to attenuated phase shifting masks that require second level writes to remove unwanted chrome. LMPG lithography is typically used for second level writes due to its high productivity, absence of charging effects, and versatile non-actinic alignment capability. As multi-patterning use expands from double to triple patterning and beyond, the number of LMPG second level writes increases correspondingly. The desire to reserve the limited capacity of advanced electron beam writers for use when essential is another factor driving the demand for LMPG capacity. The increasing demand for cost-effective productivity has kept most of the laser mask writers ever manufactured running in production, sometimes long past their projected lifespan, and new writers continue to be built based on hardware developed some years ago.ii The data path is a case in point. While state-ofthe- art when first introduced, hardware-based data path systems are difficult to modify or add new features to meet the changing requirements of the market. As data volumes increase, design styles change, and new uses are found for laser writers, it is useful to consider a replacement for this critical subsystem. The availability of low-cost, high-performance, distributed computer systems combined with highly scalable EDA software lends itself well to creating an advanced data path system. EDA software, in routine production today, scales

Planar self-aligned imprint lithography for coplanar plasmonic nanostructures fabrication

KAUST Repository

Wan, Weiwei; Lin, Liang; Xu, Yelong; Guo, Xu; Liu, Xiaoping; Ge, Haixiong; Lu, Minghui; Cui, Bo; Chen, Yanfeng

2014-01-01

manufacturing remains a challenge due to the high cost of achieving mechanical alignment precision. Although self-aligned imprint lithography was developed to avoid the need of alignment for the vertical layered structures, it has limited usage

Fabrication of nanoparticle and protein nanostructures using nanoimprint lithography

NARCIS (Netherlands)

Maury, P.A.

2007-01-01

Nanoimprint lithography (NIL) was used as a tool to pattern self-assembled monolayers (SAMs) on silicon substrates because of its ability to pattern in the micrometer and nanometer ranges. The resulting polymer template behaved as a physical barrier preventing the formation of a SAM in the covered

Direct aperture optimization: A turnkey solution for step-and-shoot IMRT

International Nuclear Information System (INIS)

Shepard, D.M.; Earl, M.A.; Li, X.A.; Naqvi, S.; Yu, C.

2002-01-01

IMRT treatment plans for step-and-shoot delivery have traditionally been produced through the optimization of intensity distributions (or maps) for each beam angle. The optimization step is followed by the application of a leaf-sequencing algorithm that translates each intensity map into a set of deliverable aperture shapes. In this article, we introduce an automated planning system in which we bypass the traditional intensity optimization, and instead directly optimize the shapes and the weights of the apertures. We call this approach 'direct aperture optimization'. This technique allows the user to specify the maximum number of apertures per beam direction, and hence provides significant control over the complexity of the treatment delivery. This is possible because the machine dependent delivery constraints imposed by the MLC are enforced within the aperture optimization algorithm rather than in a separate leaf-sequencing step. The leaf settings and the aperture intensities are optimized simultaneously using a simulated annealing algorithm. We have tested direct aperture optimization on a variety of patient cases using the EGS4/BEAM Monte Carlo package for our dose calculation engine. The results demonstrate that direct aperture optimization can produce highly conformal step-and-shoot treatment plans using only three to five apertures per beam direction. As compared with traditional optimization strategies, our studies demonstrate that direct aperture optimization can result in a significant reduction in both the number of beam segments and the number of monitor units. Direct aperture optimization therefore produces highly efficient treatment deliveries that maintain the full dosimetric benefits of IMRT

Multi-aperture digital coherent combining for free-space optical communication receivers.

Science.gov (United States)

Geisler, David J; Yarnall, Timothy M; Stevens, Mark L; Schieler, Curt M; Robinson, Bryan S; Hamilton, Scott A

2016-06-13

Space-to-ground optical communication systems can benefit from reducing the size, weight, and power profiles of space terminals. One way of reducing the required power-aperture product on a space platform is to implement effective, but costly, single-aperture ground terminals with large collection areas. In contrast, we present a ground terminal receiver architecture in which many small less-expensive apertures are efficiently combined to create a large effective aperture while maintaining excellent receiver sensitivity. This is accomplished via coherent detection behind each aperture followed by digitization. The digitized signals are then combined in a digital signal processing chain. Experimental results demonstrate lossless coherent combining of four lasercom signals, at power levels below 0.1 photons/bit/aperture.

The fabrication of nanopatterns with Au nanoparticles-embedded micelles via nanoimprint lithography

Energy Technology Data Exchange (ETDEWEB)

Lee, Jung-Pil; Kim, Eun-Uk; Koh, Haeng-Deog; Kang, Nam-Goo; Jung, Gun-Young; Lee, Jae-Suk, E-mail: gyjung@gist.ac.k, E-mail: jslee@gist.ac.k [Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu Gwangju 500-712 (Korea, Republic of)

2009-09-09

We fabricated nanopatterns with Au nanoparticles-embedded micelles (Au-micelles) by self-assembly of block copolymers via nanoimprint lithography. The micelle structure prepared by self-assembled block copolymers was used as a template for the synthesis of Au nanoparticles (Au NPs). Au NPs were synthesized in situ inside the micelles of polystyrene-block-poly(2-vinylpyridine) (PS- b-P2VP). Au-micelles were arranged on the trenches of the polymer template, which was imprinted by nanoimprint lithography. The fabrication of line-type and dot-type nanopatterns was carried out by the combined method. In addition, multilayer nanopatterns of the Au-micelles were also proposed.

Quantitative model of transport-aperture coordination during reach-to-grasp movements.

Science.gov (United States)

Rand, Miya K; Shimansky, Y P; Hossain, Abul B M I; Stelmach, George E

2008-06-01

It has been found in our previous studies that the initiation of aperture closure during reach-to-grasp movements occurs when the hand distance to target crosses a threshold that is a function of peak aperture amplitude, hand velocity, and hand acceleration. Thus, a stable relationship between those four movement parameters is observed at the moment of aperture closure initiation. Based on the concept of optimal control of movements (Naslin 1969) and its application for reach-to-grasp movement regulation (Hoff and Arbib 1993), it was hypothesized that the mathematical equation expressing that relationship can be generalized to describe coordination between hand transport and finger aperture during the entire reach-to-grasp movement by adding aperture velocity and acceleration to the above four movement parameters. The present study examines whether this hypothesis is supported by the data obtained in experiments in which young adults performed reach-to-grasp movements in eight combinations of two reach-amplitude conditions and four movement-speed conditions. It was found that linear approximation of the mathematical model described the relationship among the six movement parameters for the entire aperture-closure phase with very high precision for each condition, thus supporting the hypothesis for that phase. Testing whether one mathematical model could approximate the data across all the experimental conditions revealed that it was possible to achieve the same high level of data-fitting precision only by including in the model two additional, condition-encoding parameters and using a nonlinear, artificial neural network-based approximator with two hidden layers comprising three and two neurons, respectively. This result indicates that transport-aperture coordination, as a specific relationship between the parameters of hand transport and finger aperture, significantly depends on the condition-encoding variables. The data from the aperture-opening phase also fit a

Single-mode solid-state polymer dye laser fabricated with standard I-line UV lithography

DEFF Research Database (Denmark)

Balslev, Søren; Mironov, Andrej; Nilsson, Daniel

2005-01-01

We present single-mode solid-state polymer dye lasers fabricated with standard UV lithography. The lasers use a high-order Bragg grating and rely on index-tuning of a photosensitive polymer for waveguiding. The gain medium is Rhodamine 6G.......We present single-mode solid-state polymer dye lasers fabricated with standard UV lithography. The lasers use a high-order Bragg grating and rely on index-tuning of a photosensitive polymer for waveguiding. The gain medium is Rhodamine 6G....

High Excitation Efficiency of Channel Plasmon Polaritons in Tailored, UV-Lithography-Defined V-Grooves

DEFF Research Database (Denmark)

Smith, Cameron; Thilsted, Anil Haraksingh; Garcia-Ortiz, Cesar E.

2014-01-01

We demonstrate >50% conversion of light to V-groove channel plasmon-polaritons (CPPs) via compact waveguide-termination mirrors. Devices are fabricated using UV-lithography and crystallographic silicon etching. The V-shape is tailored by thermal oxidation to support confined CPPs.......We demonstrate >50% conversion of light to V-groove channel plasmon-polaritons (CPPs) via compact waveguide-termination mirrors. Devices are fabricated using UV-lithography and crystallographic silicon etching. The V-shape is tailored by thermal oxidation to support confined CPPs....

Boron nitride stamp for ultra-violet nanoimprinting lithography fabricated by focused ion beam lithography

International Nuclear Information System (INIS)

Altun, Ali Ozhan; Jeong, Jun-Ho; Rha, Jong-Joo; Kim, Ki-Don; Lee, Eung-Sug

2007-01-01

Cubic boron nitride (c-BN) is one of the hardest known materials (second after diamond). It has a high level of chemical resistance and high UV transmittance. In this study, a stamp for ultra-violet nanoimprint lithography (UV-NIL) was fabricated using a bi-layered BN film deposited on a quartz substrate. Deposition of the BN was done using RF magnetron sputtering. A hexagonal boron nitride (h-BN) layer was deposited for 30 min before c-BN was deposited for 30 min. The thickness of the film was measured as 160 nm. The phase of the c-BN layer was investigated using Fourier transform infrared (FTIR) spectrometry, and it was found that the c-BN layer has a 40% cubic phase. The deposited film was patterned using focused ion beam (FIB) lithography for use as a UV-NIL stamp. Line patterns were fabricated with the line width and line distance set at 150 and 150 nm, respectively. The patterning process was performed by applying different currents to observe the effect of the current value on the pattern profile. The fabricated patterns were investigated using AFM, and it was found that the pattern fabricated by applying a current value of 50 picoamperes (pA) has a better profile with a 65 nm line depth. The UV transmittance of the 160 nm thick film was measured to be 70-86%. The hardness and modulus of the BN was measured to be 12 and 150 GPa, respectively. The water contact angle of the stamp surface was measured at 75 0 . The stamp was applied to UV-NIL without coating with an anti-adhesion layer. Successful imprinting was proved via scanning electron microscope (SEM) images of the imprinted resin

Combined e-beam lithography using different energies

Czech Academy of Sciences Publication Activity Database

Krátký, Stanislav; Kolařík, Vladimír; Horáček, Miroslav; Meluzín, Petr; Král, Stanislav

2017-01-01

Roč. 177, JUN (2017), s. 30-34 ISSN 0167-9317 R&D Projects: GA TA ČR TE01020233; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01 Institutional support: RVO:68081731 Keywords : grayscale e-beam lithography * mix and match process * absorbed energy density * resist sensitivity * micro-optical elements Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Nano-processes (applications on nano-scale) Impact factor: 1.806, year: 2016

Diffraction contrast imaging using virtual apertures

International Nuclear Information System (INIS)

Gammer, Christoph; Burak Ozdol, V.; Liebscher, Christian H.; Minor, Andrew M.

2015-01-01

Two methods on how to obtain the full diffraction information from a sample region and the associated reconstruction of images or diffraction patterns using virtual apertures are demonstrated. In a STEM-based approach, diffraction patterns are recorded for each beam position using a small probe convergence angle. Similarly, a tilt series of TEM dark-field images is acquired. The resulting datasets allow the reconstruction of either electron diffraction patterns, or bright-, dark- or annular dark-field images using virtual apertures. The experimental procedures of both methods are presented in the paper and are applied to a precipitation strengthened and creep deformed ferritic alloy with a complex microstructure. The reconstructed virtual images are compared with conventional TEM images. The major advantage is that arbitrarily shaped virtual apertures generated with image processing software can be designed without facing any physical limitations. In addition, any virtual detector that is specifically designed according to the underlying crystal structure can be created to optimize image contrast. - Highlights: • A dataset containing all structural information of a given position is recorded. • The dataset allows reconstruction of virtual diffraction patterns or images. • Specific virtual apertures are designed to image precipitates in a complex alloy. • Virtual diffraction patterns from arbitrarily small regions can be established. • Using STEM diffraction to record the dataset is more efficient than TEM dark-field

Coded aperture solution for improving the performance of traffic enforcement cameras

Science.gov (United States)

Masoudifar, Mina; Pourreza, Hamid Reza

2016-10-01

A coded aperture camera is proposed for automatic license plate recognition (ALPR) systems. It captures images using a noncircular aperture. The aperture pattern is designed for the rapid acquisition of high-resolution images while preserving high spatial frequencies of defocused regions. It is obtained by minimizing an objective function, which computes the expected value of perceptual deblurring error. The imaging conditions and camera sensor specifications are also considered in the proposed function. The designed aperture improves the depth of field (DoF) and subsequently ALPR performance. The captured images can be directly analyzed by the ALPR software up to a specific depth, which is 13 m in our case, though it is 11 m for the circular aperture. Moreover, since the deblurring results of images captured by our aperture yield fewer artifacts than those captured by the circular aperture, images can be first deblurred and then analyzed by the ALPR software. In this way, the DoF and recognition rate can be improved at the same time. Our case study shows that the proposed camera can improve the DoF up to 17 m while it is limited to 11 m in the conventional aperture.

Fabrication of periodically ordered diamond nanostructures by microsphere lithography

Czech Academy of Sciences Publication Activity Database

Domonkos, Mária; Ižák, Tibor; Štolcová, L.; Proška, J.; Kromka, Alexander

2014-01-01

Roč. 251, č. 12 (2014), s. 2587-2592 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : CVD growth * diamond * microsphere lithography * selective area deposition Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.489, year: 2014

Pattern Synthesis of Dual-band Shared Aperture Interleaved Linear Antenna Arrays

Directory of Open Access Journals (Sweden)

H. Guo

2014-09-01

Full Text Available This paper presents an approach to improve the efficiency of an array aperture by interleaving two different arrays in the same aperture area. Two sub-arrays working at different frequencies are interleaved in the same linear aperture area. The available aperture area is efficiently used. The element positions of antenna array are optimized by using Invasive Weed Optimization (IWO to reduce the peak side lobe level (PSLL of the radiation pattern. To overcome the shortness of traditional methods which can only fulfill the design of shared aperture antenna array working at the same frequency, this method can achieve the design of dual-band antenna array with wide working frequency range. Simulation results show that the proposed method is feasible and efficient in the synthesis of dual-band shared aperture antenna array.

Solar energy apparatus with apertured shield

Science.gov (United States)

Collings, Roger J. (Inventor); Bannon, David G. (Inventor)

1989-01-01

A protective apertured shield for use about an inlet to a solar apparatus which includesd a cavity receiver for absorbing concentrated solar energy. A rigid support truss assembly is fixed to the periphery of the inlet and projects radially inwardly therefrom to define a generally central aperture area through which solar radiation can pass into the cavity receiver. A non-structural, laminated blanket is spread over the rigid support truss in such a manner as to define an outer surface area and an inner surface area diverging radially outwardly from the central aperture area toward the periphery of the inlet. The outer surface area faces away from the inlet and the inner surface area faces toward the cavity receiver. The laminated blanket includes at least one layer of material, such as ceramic fiber fabric, having high infra-red emittance and low solar absorption properties, and another layer, such as metallic foil, of low infra-red emittance properties.

Class of near-perfect coded apertures

International Nuclear Information System (INIS)

Cannon, T.M.; Fenimore, E.E.

1978-01-01

The encoding/decoding method produces artifacts, which even in the absence of quantum noise, restrict the quality of the reconstructed image. This is true of most correlation-type methods. If the decoding procedure is of the deconvolution variety, small terms in the transfer function of the aperture can lead to excessive noise in the reconstructed image. The authors propose to circumvent both of these problems by use of a uniformly redundant array (URA) as the coded aperture in conjunction with a special correlation decoding method. The correlation of the decoding array with the aperture results in a delta function with deterministically zero sidelobes. It is shown that the reconstructed image in the URA system contains virtually uniform noise regardless of the structure in the original source. Therefore, the improvement over a single pinhole camera will be relatively larger for the brighter points in the source than for the low intensity points. 12 refs

Programmable imprint lithography template

Science.gov (United States)

Cardinale, Gregory F [Oakland, CA; Talin, Albert A [Livermore, CA

2006-10-31

A template for imprint lithography (IL) that reduces significantly template production costs by allowing the same template to be re-used for several technology generations. The template is composed of an array of spaced-apart moveable and individually addressable rods or plungers. Thus, the template can be configured to provide a desired pattern by programming the array of plungers such that certain of the plungers are in an "up" or actuated configuration. This arrangement of "up" and "down" plungers forms a pattern composed of protruding and recessed features which can then be impressed onto a polymer film coated substrate by applying a pressure to the template impressing the programmed configuration into the polymer film. The pattern impressed into the polymer film will be reproduced on the substrate by subsequent processing.

Plasmonic Lithography Utilizing Epsilon Near Zero Hyperbolic Metamaterial.

Science.gov (United States)

Chen, Xi; Zhang, Cheng; Yang, Fan; Liang, Gaofeng; Li, Qiaochu; Guo, L Jay

2017-10-24

In this work, a special hyperbolic metamaterial (HMM) metamaterial is investigated for plasmonic lithography of period reduction patterns. It is a type II HMM (ϵ ∥ 0) whose tangential component of the permittivity ϵ ∥ is close to zero. Due to the high anisotropy of the type II epsilon-near-zero (ENZ) HMM, only one plasmonic mode can propagate horizontally with low loss in a waveguide system with ENZ HMM as its core. This work takes the advantage of a type II ENZ HMM composed of aluminum/aluminum oxide films and the associated unusual mode to expose a photoresist layer in a specially designed lithography system. Periodic patterns with a half pitch of 58.3 nm were achieved due to the interference of third-order diffracted light of the grating. The lines were 1/6 of the mask with a period of 700 nm and ∼1/7 of the wavelength of the incident light. Moreover, the theoretical analyses performed are widely applicable to structures made of different materials such as silver as well as systems working at deep ultraviolet wavelengths including 193, 248, and 365 nm.

Synthetic aperture design for increased SAR image rate

Science.gov (United States)

Bielek, Timothy P [Albuquerque, NM; Thompson, Douglas G [Albuqerque, NM; Walker, Bruce C [Albuquerque, NM

2009-03-03

High resolution SAR images of a target scene at near video rates can be produced by using overlapped, but nevertheless, full-size synthetic apertures. The SAR images, which respectively correspond to the apertures, can be analyzed in sequence to permit detection of movement in the target scene.

Laser-produced plasma-extreme ultraviolet light source for next generation lithography

International Nuclear Information System (INIS)

Nishihara, Katsunobu; Nishimura, Hiroaki; Gamada, Kouhei; Murakami, Masakatsu; Mochizuki, Takayasu; Sasaki, Akira; Sunahara, Atsushi

2005-01-01

Extreme ultraviolet (EUV) lithography is the most promising candidate for the next generation lithography for the 45 nm technology node and below. EUV light sources under consideration use 13.5 nm radiations from multicharged xenon, tin and lithium ions, because Mo/Si multiplayer mirrors have high reflectivity at this wavelength. A review of laser-produced plasma (LPP) EUV light sources is presented with a focus on theoretical and experimental studies under the auspices of the Leading Project promoted by MEXT. We discuss three theoretical topics: atomic processes in the LPP-EUV light source, conversion efficiency from laser light to EUV light at 13.5 nm wave-length with 2% bound width, and fast ion spectra. The properties of EUV emission from tin and xenon plasmas are also shown based on experimental results. (author)

Development of compact synchrotron light source LUNA for x-ray lithography

International Nuclear Information System (INIS)

Takahashi, M.; Mandai, S.; Hoshi, Y.; Kohno, Y.

1992-01-01

A compact synchrotron light source LUNA has been developed by Ishikawajima-Harima Heavy Industries Co., Ltd. (IHI), especially for x-ray lithography. It consists of a 45-MeV linac as an electron injector and an 800-MeV synchrotron. The peak wavelength of synchrotron radiation is around 10 A. The installation of LUNA was completed in April 1989 at the Tsuchiura Facility of IHI. The synchrotron radiation was first observed in December 1989. A stored beam current of 50 mA at 800 MeV and a lifetime over 1 h have been achieved. At present, experiments are still continuing to increase the stored current and the lifetime. X-ray lithography testing is scheduled to begin in a clean room in this facility. This paper describes the outline of LUNA and the present status

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography.

Science.gov (United States)

Cummins, Cian; Bell, Alan P; Morris, Michael A

2017-09-30

The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs) and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes analogous to semiconductor manufacturing. We examine the status of recent efforts to develop active device elements using nontraditional lithography in this article, with a specific focus on block copolymer (BCP) feature patterning. An elegant route is demonstrated using directed self-assembly (DSA) of BCPs for the fabrication of aligned tungsten trioxide (WO₃) nanowires towards nanoelectronic device application. The strategy described avoids conventional lithography practices such as optical patterning as well as repeated etching and deposition protocols and opens up a new approach for device development. Nanoimprint lithography (NIL) silsesquioxane (SSQ)-based trenches were utilized in order to align a cylinder forming poly(styrene)- block -poly(4-vinylpyridine) (PS- b -P4VP) BCP soft template. We outline WO₃ nanowire fabrication using a spin-on process and the symmetric current-voltage characteristics of the resulting Ti/Au (5 nm/45 nm) contacted WO₃ nanowires. The results highlight the simplicity of a solution-based approach that allows creating active device elements and controlling the chemistry of specific self-assembling building blocks. The process enables one to dictate nanoscale chemistry with an unprecedented level of sophistication, forging the way for next-generation nanoelectronic devices. We lastly outline views and future research studies towards improving the current platform to achieve the desired device performance.

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography

Directory of Open Access Journals (Sweden)

Cian Cummins

2017-09-01

Full Text Available The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes analogous to semiconductor manufacturing. We examine the status of recent efforts to develop active device elements using nontraditional lithography in this article, with a specific focus on block copolymer (BCP feature patterning. An elegant route is demonstrated using directed self-assembly (DSA of BCPs for the fabrication of aligned tungsten trioxide (WO3 nanowires towards nanoelectronic device application. The strategy described avoids conventional lithography practices such as optical patterning as well as repeated etching and deposition protocols and opens up a new approach for device development. Nanoimprint lithography (NIL silsesquioxane (SSQ-based trenches were utilized in order to align a cylinder forming poly(styrene-block-poly(4-vinylpyridine (PS-b-P4VP BCP soft template. We outline WO3 nanowire fabrication using a spin-on process and the symmetric current-voltage characteristics of the resulting Ti/Au (5 nm/45 nm contacted WO3 nanowires. The results highlight the simplicity of a solution-based approach that allows creating active device elements and controlling the chemistry of specific self-assembling building blocks. The process enables one to dictate nanoscale chemistry with an unprecedented level of sophistication, forging the way for next-generation nanoelectronic devices. We lastly outline views and future research studies towards improving the current platform to achieve the desired device performance.

Inspection of imprint lithography patterns for semiconductor and patterned media

Science.gov (United States)

Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

2010-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

The DARPA compact Superconducting X-Ray Lithography Source features

International Nuclear Information System (INIS)

Heese, R.; Kalsi, S.; Leung, E.

1991-01-01

Under DARPA sponsorship, a compact Superconducting X-Ray Lithography Source (SXLS) is being designed and built by the Brookhaven National Laboratory (BNL) with industry participation from Grumman Corporation and General Dynamics. This source is optimized for lithography work for sub-micron high density computer chips, and is about the size of a billiard table (1.5 m x 4.0 m). The machine has a racetrack configuration with two 180 degree bending magnets being designed and built by General Dynamics under a subcontract with Grumman Corporation. The machine will have 18 photon ports which would deliver light peaked at a wave length of 10 Angstroms. Grumman is commercializing the SXLS device and plans to book orders for delivery of industrialized SXLS (ISXLS) versions in 1995. This paper will describe the major features of this device. The commercial machine will be equipped with a fully automated user-friendly control systems, major features of which are already working on a compact warm dipole ring at BNL. This ring has normal dipole magnets with dimensions identical to the SXLS device, and has been successfully commissioned

Mask Materials and Designs for Extreme Ultra Violet Lithography

Science.gov (United States)

Kim, Jung Sik; Ahn, Jinho

2018-03-01

Extreme ultra violet lithography (EUVL) is no longer a future technology but is going to be inserted into mass production of semiconductor devices of 7 nm technology node in 2018. EUVL is an extension of optical lithography using extremely short wavelength (13.5 nm). This short wavelength requires major modifications in the optical systems due to the very strong absorption of EUV light by materials. Refractive optics can no longer be used, and reflective optics is the only solution to transfer image from mask to wafer. This is why we need the multilayer (ML) mirror-based mask as well as an oblique incident angle of light. This paper discusses the principal theory on the EUV mask design and its component materials including ML reflector and EUV absorber. Mask shadowing effect (or mask 3D effect) is explained and its technical solutions like phase shift mask is reviewed. Even though not all the technical issues on EUV mask are handled in this review paper, you will be able to understand the principles determining the performance of EUV masks.

Integration of plant viruses in electron beam lithography nanostructures

International Nuclear Information System (INIS)

Alonso, Jose M; Bittner, Alexander M; Ondarçuhu, Thierry

2013-01-01

Tobacco mosaic virus (TMV) is the textbook example of a virus, and also of a self-assembling nanoscale structure. This tubular RNA/protein architecture has also found applications as biotemplate for the synthesis of nanomaterials such as wires, as tubes, or as nanoparticle assemblies. Although TMV is, being a biological structure, quite resilient to environmental conditions (temperature, chemicals), it cannot be processed in electron beam lithography (eBL) fabrication, which is the most important and most versatile method of nanoscale structuring. Here we present adjusted eBL-compatible processes that allow the incorporation of TMV in nanostructures made of positive and negative tone eBL resists. The key steps are covering TMV by polymer resists, which are only heated to 50 °C, and development (selective dissolution) in carefully selected organic solvents. We demonstrate the post-lithography biochemical functionality of TMV by selective immunocoating of the viral particles, and the use of immobilized TMV as direct immunosensor. Our modified eBL process should be applicable to incorporate a wide range of sensitive materials in nanofabrication schemes. (paper)

Dynamic Aperture Measurements at the Advanced Light Source

International Nuclear Information System (INIS)

Decking, W.; Robin, D.

1999-01-01

A large dynamic aperture for a storage ring is of importance for long lifetimes and a high injection efficiency. Measurements of the dynamic aperture of the third generation synchrotron light source Advanced Light Source (ALS) using beam excitation with kicker magnets are presented. The experiments were done for various accelerator conditions, allowing us to investigate the influence of different working points, chromaticities, insertion devices, etc.. The results are compared both with tracking calculations and a simple model for the dynamic aperture yielding good agreements. This gives us confidence in the predictability of the nonlinear accelerator model. This is especially important for future ALS upgrades as well as new storage ring designs

Singer product apertures—A coded aperture system with a fast decoding algorithm

International Nuclear Information System (INIS)

Byard, Kevin; Shutler, Paul M.E.

2017-01-01

A new type of coded aperture configuration that enables fast decoding of the coded aperture shadowgram data is presented. Based on the products of incidence vectors generated from the Singer difference sets, we call these Singer product apertures. For a range of aperture dimensions, we compare experimentally the performance of three decoding methods: standard decoding, induction decoding and direct vector decoding. In all cases the induction and direct vector methods are several orders of magnitude faster than the standard method, with direct vector decoding being significantly faster than induction decoding. For apertures of the same dimensions the increase in speed offered by direct vector decoding over induction decoding is better for lower throughput apertures.

Singer product apertures—A coded aperture system with a fast decoding algorithm

Energy Technology Data Exchange (ETDEWEB)

Byard, Kevin, E-mail: kevin.byard@aut.ac.nz [School of Economics, Faculty of Business, Economics and Law, Auckland University of Technology, Auckland 1142 (New Zealand); Shutler, Paul M.E. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore)

2017-06-01

A new type of coded aperture configuration that enables fast decoding of the coded aperture shadowgram data is presented. Based on the products of incidence vectors generated from the Singer difference sets, we call these Singer product apertures. For a range of aperture dimensions, we compare experimentally the performance of three decoding methods: standard decoding, induction decoding and direct vector decoding. In all cases the induction and direct vector methods are several orders of magnitude faster than the standard method, with direct vector decoding being significantly faster than induction decoding. For apertures of the same dimensions the increase in speed offered by direct vector decoding over induction decoding is better for lower throughput apertures.

Eco-friendly electron beam lithography using water-developable resist material derived from biomass

Science.gov (United States)

Takei, Satoshi; Oshima, Akihiro; Wakabayashi, Takanori; Kozawa, Takahiro; Tagawa, Seiichi

2012-07-01

We investigated the eco-friendly electron beam (EB) lithography using a high-sensitive negative type of water-developable resist material derived from biomass on hardmask layer for tri-layer processes. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of trimethylphenylammonium hydroxide. The images of 200 nm line and 800 nm space pattern with exposure dose of 7.0 μC/cm2 and CF4 etching selectivity of 2.2 with hardmask layer were provided by specific process conditions.

Examination for optimization of synchrotron radiation spectrum for the x ray depth lithography

Science.gov (United States)

Dany, Raimund

1992-06-01

The effect of reducing the vertical distribution of synchrotron radiation on its spectral distribution is examined through resin irradiation. The resulting filter effect is compared to that of absorption filters. Transmission coefficients of titanium, gold, and polyamide were calculated from linear absorption coefficients with the Beer law. The use of a diaphragm in X-ray depth lithography, which is the first step of the LIGA (Lithography Galvanoforming Molding) process, is discussed. A calorimetric device for determining the synchrotron radiation power and distribution was developed and tested. Measurements at the ELSA storage ring show a strong dependence of the vertical emittance on the electron current.

„New approaches to atomic force microscope lithography on silicon"

DEFF Research Database (Denmark)

Birkelund, Karen; Thomsen, Erik Vilain; Rasmussen, Jan Pihl

1997-01-01

We have investigated new approaches to the formation of conducting nanowires on crystalline silicon surfaces using atomic force microscope (AFM) lithography. To increase processing speed and reduce wear of the AFM tip, large-scale structures are formed with a direct laser write setup, while the AFM...

High-quality global hydrogen silsequioxane contact planarization for nanoimprint lithography

NARCIS (Netherlands)

Büyükköse, S.; Vratzov, Boris; van der Wiel, Wilfred Gerard

2011-01-01

The authors present a novel global contact planarization technique based on the spin-on-glass material hydrogen silsequioxane (HSQ) and demonstrate its excellent performance on patterns of 70 nm up to several microns generated by UV-based nanoimprint lithography. The HSQ layer (∼165 nm) is spin

Reverse pattern duplication utilizing a two-step metal lift-off process via nanoimprint lithography

International Nuclear Information System (INIS)

Song, Sun-Sik; Kim, Eun-Uk; Jung, Hee-Soo; Kim, Ki-Seok; Jung, Gun-Young

2009-01-01

A two-step metal lift-off process using a selective etching recipe was demonstrated as a new technique for the reverse pattern fabrication of the features of a master stamp via a UV-based nanoimprint lithography technique. A transparent master stamp with repeated pillars (150 nm diameter at 300 nm pitch) was fabricated by using laser interference lithography and the subsequent dry-etching process. After nanoimprint lithography and the following gold (Au) lift-off process, the corresponding gold dots (20 nm height) were generated. A thin chromium layer (Cr, 5 nm) was then deposited and subjected to the aqua regia solution, which dissolved only Au dots. By using a selective wet etching recipe between gold (Au) and chromium (Cr) materials, a Cr layer with holes was reliably generated, which was used as an etching mask to transfer holes into the silicon substrate in the subsequent dry-etching process. Hole patterns with a diameter of 146 nm were inversely replicated faithfully from the master stamp with the corresponding pillars without a notable feature size distortion

Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography

International Nuclear Information System (INIS)

Song, Jingfeng; Lu, Haidong; Gruverman, Alexei; Ducharme, Stephen; Li, Shumin; Tan, Li

2016-01-01

Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics. (paper)

Fabrication of ferroelectric polymer nanostructures on flexible substrates by soft-mold reverse nanoimprint lithography.

Science.gov (United States)

Song, Jingfeng; Lu, Haidong; Li, Shumin; Tan, Li; Gruverman, Alexei; Ducharme, Stephen

2016-01-08

Conventional nanoimprint lithography with expensive rigid molds is used to pattern ferroelectric polymer nanostructures on hard substrate for use in, e.g., organic electronics. The main innovation here is the use of inexpensive soft polycarbonate molds derived from recordable DVDs and reverse nanoimprint lithography at low pressure, which is compatible with flexible substrates. This approach was implemented to produce regular stripe arrays with a spacing of 700 nm from vinylidene fluoride co trifluoroethylene ferroelectric copolymer on flexible polyethylene terephthalate substrates. The nanostructures have very stable and switchable piezoelectric response and good crystallinity, and are highly promising for use in organic electronics enhanced or complemented by the unique properties of the ferroelectric polymer, such as bistable polarization, piezoelectric response, pyroelectric response, or electrocaloric function. The soft-mold reverse nanoimprint lithography also leaves little or no residual layer, affording good isolation of the nanostructures. This approach reduces the cost and facilitates large-area, high-throughput production of isolated functional polymer nanostructures on flexible substrates for the increasing application of ferroelectric polymers in flexible electronics.

Self characterization of a coded aperture array for neutron source imaging

Energy Technology Data Exchange (ETDEWEB)

Volegov, P. L., E-mail: volegov@lanl.gov; Danly, C. R.; Guler, N.; Merrill, F. E.; Wilde, C. H. [Los Alamos National Laboratory, Los Alamos, New Mexico 87544 (United States); Fittinghoff, D. N. [Livermore National Laboratory, Livermore, California 94550 (United States)

2014-12-15

The neutron imaging system at the National Ignition Facility (NIF) is an important diagnostic tool for measuring the two-dimensional size and shape of the neutrons produced in the burning deuterium-tritium plasma during the stagnation stage of inertial confinement fusion implosions. Since the neutron source is small (∼100 μm) and neutrons are deeply penetrating (>3 cm) in all materials, the apertures used to achieve the desired 10-μm resolution are 20-cm long, triangular tapers machined in gold foils. These gold foils are stacked to form an array of 20 apertures for pinhole imaging and three apertures for penumbral imaging. These apertures must be precisely aligned to accurately place the field of view of each aperture at the design location, or the location of the field of view for each aperture must be measured. In this paper we present a new technique that has been developed for the measurement and characterization of the precise location of each aperture in the array. We present the detailed algorithms used for this characterization and the results of reconstructed sources from inertial confinement fusion implosion experiments at NIF.

The chaotic dynamical aperture

International Nuclear Information System (INIS)

Lee, S.Y.; Tepikian, S.

1985-01-01

Nonlinear magnetic forces become more important for particles in the modern large accelerators. These nonlinear elements are introduced either intentionally to control beam dynamics or by uncontrollable random errors. Equations of motion in the nonlinear Hamiltonian are usually non-integrable. Because of the nonlinear part of the Hamiltonian, the tune diagram of accelerators is a jungle. Nonlinear magnet multipoles are important in keeping the accelerator operation point in the safe quarter of the hostile jungle of resonant tunes. Indeed, all the modern accelerator design have taken advantages of nonlinear mechanics. On the other hand, the effect of the uncontrollable random multipoles should be evaluated carefully. A powerful method of studying the effect of these nonlinear multipoles is using a particle tracking calculation, where a group of test particles are tracing through these magnetic multipoles in the accelerator hundreds to millions of turns in order to test the dynamical aperture of the machine. These methods are extremely useful in the design of a large accelerator such as SSC, LEP, HERA and RHIC. These calculations unfortunately take tremendous amount of computing time. In this paper, we try to apply the existing method in the nonlinear dynamics to study the possible alternative solution. When the Hamiltonian motion becomes chaotic, the tune of the machine becomes undefined. The aperture related to the chaotic orbit can be identified as chaotic dynamical aperture. We review the method of determining chaotic orbit and apply the method to nonlinear problems in accelerator physics. We then discuss the scaling properties and effect of random sextupoles

Variable aperture-based ptychographical iterative engine method

Science.gov (United States)

Sun, Aihui; Kong, Yan; Meng, Xin; He, Xiaoliang; Du, Ruijun; Jiang, Zhilong; Liu, Fei; Xue, Liang; Wang, Shouyu; Liu, Cheng

2018-02-01

A variable aperture-based ptychographical iterative engine (vaPIE) is demonstrated both numerically and experimentally to reconstruct the sample phase and amplitude rapidly. By adjusting the size of a tiny aperture under the illumination of a parallel light beam to change the illumination on the sample step by step and recording the corresponding diffraction patterns sequentially, both the sample phase and amplitude can be faithfully reconstructed with a modified ptychographical iterative engine (PIE) algorithm. Since many fewer diffraction patterns are required than in common PIE and the shape, the size, and the position of the aperture need not to be known exactly, this proposed vaPIE method remarkably reduces the data acquisition time and makes PIE less dependent on the mechanical accuracy of the translation stage; therefore, the proposed technique can be potentially applied for various scientific researches.

Performance limits of ion extraction systems with non-circular apertures

Energy Technology Data Exchange (ETDEWEB)

Shagayda, A., E-mail: shagayda@gmail.com; Madeev, S. [Keldysh Research Centre, Onezhskaya, 8, 125438 Moscow (Russian Federation)

2016-04-15

A three-dimensional computer simulation is used to determine the perveance limitations of ion extraction systems with non-circular apertures. The objective of the study is to analyze the possibilities to improve mechanical strength of the ion optics made of carbon-carbon composite materials. Non-circular grid apertures are better suited to the physical structure of carbon-carbon composite materials, than conventionally used circular holes in a hexagonal pattern, because they allow a fewer number of cut fibers. However, the slit-type accelerating systems, usually regarded as the main alternative to the conventional ion optics, have an intolerably narrow range of operating perveance values at which there is no direct ion impingement on the acceleration grid. This paper presents results of comparative analysis of a number of different ion optical systems with non-circular apertures and conventional ion optical systems with circular apertures. It has been revealed that a relatively wide perveance range without direct ion impingement may be obtained with apertures shaped as a square with rounded corners. Numerical simulations show that this geometry may have equivalent perveance range as the traditional geometry with circular apertures while being more mechanically robust. In addition, such important characteristics, as the effective transparency for both the ions and the neutral atoms, the height of the potential barrier reflecting the downstream plasma electrons and the angular divergence of the beamlet also can be very close to these parameters for the optics with circular apertures.

Performance limits of ion extraction systems with non-circular apertures.

Science.gov (United States)

Shagayda, A; Madeev, S

2016-04-01

A three-dimensional computer simulation is used to determine the perveance limitations of ion extraction systems with non-circular apertures. The objective of the study is to analyze the possibilities to improve mechanical strength of the ion optics made of carbon-carbon composite materials. Non-circular grid apertures are better suited to the physical structure of carbon-carbon composite materials, than conventionally used circular holes in a hexagonal pattern, because they allow a fewer number of cut fibers. However, the slit-type accelerating systems, usually regarded as the main alternative to the conventional ion optics, have an intolerably narrow range of operating perveance values at which there is no direct ion impingement on the acceleration grid. This paper presents results of comparative analysis of a number of different ion optical systems with non-circular apertures and conventional ion optical systems with circular apertures. It has been revealed that a relatively wide perveance range without direct ion impingement may be obtained with apertures shaped as a square with rounded corners. Numerical simulations show that this geometry may have equivalent perveance range as the traditional geometry with circular apertures while being more mechanically robust. In addition, such important characteristics, as the effective transparency for both the ions and the neutral atoms, the height of the potential barrier reflecting the downstream plasma electrons and the angular divergence of the beamlet also can be very close to these parameters for the optics with circular apertures.

Performance limits of ion extraction systems with non-circular apertures

Science.gov (United States)

Shagayda, A.; Madeev, S.

2016-04-01

A three-dimensional computer simulation is used to determine the perveance limitations of ion extraction systems with non-circular apertures. The objective of the study is to analyze the possibilities to improve mechanical strength of the ion optics made of carbon-carbon composite materials. Non-circular grid apertures are better suited to the physical structure of carbon-carbon composite materials, than conventionally used circular holes in a hexagonal pattern, because they allow a fewer number of cut fibers. However, the slit-type accelerating systems, usually regarded as the main alternative to the conventional ion optics, have an intolerably narrow range of operating perveance values at which there is no direct ion impingement on the acceleration grid. This paper presents results of comparative analysis of a number of different ion optical systems with non-circular apertures and conventional ion optical systems with circular apertures. It has been revealed that a relatively wide perveance range without direct ion impingement may be obtained with apertures shaped as a square with rounded corners. Numerical simulations show that this geometry may have equivalent perveance range as the traditional geometry with circular apertures while being more mechanically robust. In addition, such important characteristics, as the effective transparency for both the ions and the neutral atoms, the height of the potential barrier reflecting the downstream plasma electrons and the angular divergence of the beamlet also can be very close to these parameters for the optics with circular apertures.

Performance limits of ion extraction systems with non-circular apertures

International Nuclear Information System (INIS)

Shagayda, A.; Madeev, S.

2016-01-01

A three-dimensional computer simulation is used to determine the perveance limitations of ion extraction systems with non-circular apertures. The objective of the study is to analyze the possibilities to improve mechanical strength of the ion optics made of carbon-carbon composite materials. Non-circular grid apertures are better suited to the physical structure of carbon-carbon composite materials, than conventionally used circular holes in a hexagonal pattern, because they allow a fewer number of cut fibers. However, the slit-type accelerating systems, usually regarded as the main alternative to the conventional ion optics, have an intolerably narrow range of operating perveance values at which there is no direct ion impingement on the acceleration grid. This paper presents results of comparative analysis of a number of different ion optical systems with non-circular apertures and conventional ion optical systems with circular apertures. It has been revealed that a relatively wide perveance range without direct ion impingement may be obtained with apertures shaped as a square with rounded corners. Numerical simulations show that this geometry may have equivalent perveance range as the traditional geometry with circular apertures while being more mechanically robust. In addition, such important characteristics, as the effective transparency for both the ions and the neutral atoms, the height of the potential barrier reflecting the downstream plasma electrons and the angular divergence of the beamlet also can be very close to these parameters for the optics with circular apertures.

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

International Nuclear Information System (INIS)

Brose, S.; Danylyuk, S.; Juschkin, L.; Dittberner, C.; Bergmann, K.; Moers, J.; Panaitov, G.; Trellenkamp, St.; Loosen, P.; Grützmacher, D.

2012-01-01

Lithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm). The masks and filters with free standing areas up to 1000 × 1000 μm 2 and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source. - Highlights: ► Broadband transmission masks for EUV proximity and interference lithography. ► Technology for free standing niobium membranes with areas up to 1 mm 2 . ► High density patterns with periods of 100 nm and structure sizes below 40 nm. ► Measured diffraction efficiency at 11 nm is in agreement with the theory. ► Produced masks can be effectively used with wavelengths between 6 nm and 17 nm.

High-contrast visible nulling coronagraph for segmented and arbitrary telescope apertures

Science.gov (United States)

Hicks, Brian A.; Lyon, Richard G.; Bolcar, Matthew R.; Clampin, Mark; Petrone, Peter

2014-08-01

Exoplanet coronagraphy will be driven by the telescope architectures available and thus the system designer must have available one or more suitable coronagraphic instrument choices that spans the set of telescope apertures, including filled (off-axis), obscured (e.g. with secondary mirror spiders and struts), segmented apertures, such as JWST, and interferometric apertures. In this work we present one such choice of coronagraph, known as the visible nulling coronagraph (VNC), that spans all four types of aperture and also employs differential sensing and control.

Fast thermal nanoimprint lithography by a stamp with integrated heater

DEFF Research Database (Denmark)

Tormen, Massimo; Malureanu, Radu; Pedersen, Rasmus Haugstrup

2008-01-01

We propose fast nanoimprinting lithography (NIL) process based on the use of stamps with integrated heater. The latter consists of heavily ion implantation n-type doped silicon layer buried below the microstructured surface of the stamp. The stamp is heated by Joule effect, by 50 μs 25 Hz...

Ships as salient objects in synthetic aperture radar imaginary

CSIR Research Space (South Africa)

Schwegmann, Colin P

2016-07-01

Full Text Available The widespread access to Synthetic Aperture Radar data has created a need for more precise ship extraction, specifically in low-to-medium resolution imagery. While Synthetic Aperture Radar pixel resolution is improving for a large swaths...

Electromagnetic Formation Flight (EMFF) for Sparse Aperture Arrays

Science.gov (United States)

Kwon, Daniel W.; Miller, David W.; Sedwick, Raymond J.

2004-01-01

Traditional methods of actuating spacecraft in sparse aperture arrays use propellant as a reaction mass. For formation flying systems, propellant becomes a critical consumable which can be quickly exhausted while maintaining relative orientation. Additional problems posed by propellant include optical contamination, plume impingement, thermal emission, and vibration excitation. For these missions where control of relative degrees of freedom is important, we consider using a system of electromagnets, in concert with reaction wheels, to replace the consumables. Electromagnetic Formation Flight sparse apertures, powered by solar energy, are designed differently from traditional propulsion systems, which are based on V. This paper investigates the design of sparse apertures both inside and outside the Earth's gravity field.

Exo-planet Direct Imaging with On-Axis and/or Segmented Apertures in Space: Adaptive Compensation of Aperture Discontinuities

Science.gov (United States)

Soummer, Remi

Capitalizing on a recent breakthrough in wavefront control theory for obscured apertures made by our group, we propose to demonstrate a method to achieve high contrast exoplanet imaging with on-axis obscured apertures. Our new algorithm, which we named Adaptive Compensation of Aperture Discontinuities (ACAD), provides the ability to compensate for aperture discontinuities (segment gaps and/or secondary mirror supports) by controlling deformable mirrors in a nonlinear wavefront control regime not utilized before but conceptually similar to the beam reshaping used in PIAA coronagraphy. We propose here an in-air demonstration at 1E- 7 contrast, enabled by adding a second deformable mirror to our current test-bed. This expansion of the scope of our current efforts in exoplanet imaging technologies will enabling us to demonstrate an integrated solution for wavefront control and starlight suppression on complex aperture geometries. It is directly applicable at scales from moderate-cost exoplanet probe missions to the 2.4 m AFTA telescopes to future flagship UVOIR observatories with apertures potentially 16-20 m. Searching for nearby habitable worlds with direct imaging is one of the top scientific priorities established by the Astro2010 Decadal Survey. Achieving this ambitious goal will require 1e-10 contrast on a telescope large enough to provide angular resolution and sensitivity to planets around a significant sample of nearby stars. Such a mission must of course also be realized at an achievable cost. Lightweight segmented mirror technology allows larger diameter optics to fit in any given launch vehicle as compared to monolithic mirrors, and lowers total life-cycle costs from construction through integration & test, making it a compelling option for future large space telescopes. At smaller scales, on-axis designs with secondary obscurations and supports are less challenging to fabricate and thus more affordable than the off-axis unobscured primary mirror designs

Synthetic aperture radar capabilities in development

Energy Technology Data Exchange (ETDEWEB)

Miller, M. [Lawrence Livermore National Lab., CA (United States)

1994-11-15

The Imaging and Detection Program (IDP) within the Laser Program is currently developing an X-band Synthetic Aperture Radar (SAR) to support the Joint US/UK Radar Ocean Imaging Program. The radar system will be mounted in the program`s Airborne Experimental Test-Bed (AETB), where the initial mission is to image ocean surfaces and better understand the physics of low grazing angle backscatter. The Synthetic Aperture Radar presentation will discuss its overall functionality and a brief discussion on the AETB`s capabilities. Vital subsystems including radar, computer, navigation, antenna stabilization, and SAR focusing algorithms will be examined in more detail.

Linear Fresnel zone plate based two-state alignment system for 0.25 micron x-ray lithography

International Nuclear Information System (INIS)

Chen, G.

1993-01-01

X-ray lithography has proven to be a cost effective and promising technique for fabricating Integrated Circuits (ICs) with minimum feature sizes of less than 0.25 μm. Since IC fabrication is a multilevel process, to preserve the functionality of devices, circuit patterns printed at each lithography level must match existing patterns on the wafer with an accuracy of less than 1/3 ∼ 1/5 of the minimum feature size. An alignment system is used to position the mask relative to the wafer so that mask circuit patterns can be printed on the wafer at the designed position. As the minimum printed feature size shrinks, the overlay requirements of a lithography tool become more stringent. A stepper for 0.25 μm feature device fabrication requires an overlay accuracy of 0.075 μm, of which only 0.05 μm (mean + 3σ) is allocated to its alignment system. This thesis presents the development of a linear Fresnel zone late based two-state alignment (TSA) method for a 0.25 μm x-ray lithography tool. The authors first analyze the overlay requirement in a lithography process and the error allocation to the alignment system for a 0.25 μ feature x-ray lithography tool. They then describe the principle of the two-state alignment, its computer simulation and the optimal alignment mark design. They carried out an optical bench test for the one-axes alignment setup and experimentally evaluated the performance of the system. They developed a three-axes TSA system and integrated the system with the ES-3 x-ray beamline to construct the CXrL aligner, an experimental x-ray exposure system in CXrL. They measured the alignment accuracy of the exposure system to be better than 0.035 μm (3σ) on both metal and dielectric alignment mark substrates. They also studied the effect of processing coatings on the alignment signal with different wafer mark substrates. They successfully printed the 0.5 μm gate level patterns for the first NMOS test chip at CXrL

Implementation and benefits of advanced process control for lithography CD and overlay

Science.gov (United States)

Zavyalova, Lena; Fu, Chong-Cheng; Seligman, Gary S.; Tapp, Perry A.; Pol, Victor

2003-05-01

Due to the rapidly reduced imaging process windows and increasingly stingent device overlay requirements, sub-130 nm lithography processes are more severely impacted than ever by systamic fault. Limits on critical dimensions (CD) and overlay capability further challenge the operational effectiveness of a mix-and-match environment using multiple lithography tools, as such mode additionally consumes the available error budgets. Therefore, a focus on advanced process control (APC) methodologies is key to gaining control in the lithographic modules for critical device levels, which in turn translates to accelerated yield learning, achieving time-to-market lead, and ultimately a higher return on investment. This paper describes the implementation and unique challenges of a closed-loop CD and overlay control solution in high voume manufacturing of leading edge devices. A particular emphasis has been placed on developing a flexible APC application capable of managing a wide range of control aspects such as process and tool drifts, single and multiple lot excursions, referential overlay control, 'special lot' handling, advanced model hierarchy, and automatic model seeding. Specific integration cases, including the multiple-reticle complementary phase shift lithography process, are discussed. A continuous improvement in the overlay and CD Cpk performance as well as the rework rate has been observed through the implementation of this system, and the results are studied.

Aperture referral in dioptric systems with stigmatic elements

Directory of Open Access Journals (Sweden)

W. F. Harris

2012-12-01

Full Text Available A previous paper develops the general theory of aperture referral in linear optics and shows how several ostensibly distinct concepts, including the blur patch on the retina, the effective corneal patch, the projective field and the field of view, are now unified as particular applications of the general theory.  The theory allows for astigmatism and heterocentricity.  Symplecticity and the generality of the approach, however, make it difficult to gain insight and mean that the material is not accessible to readers unfamiliar with matrices and linear algebra. The purpose of this paper is to examine whatis, perhaps, the most important special case, that in which astigmatism is ignored.  Symplecticity and, hence, the mathematics become greatly simplified. The mathematics reduces largely to elementary vector algebra and, in some places, simple scalar algebra and yet retains the mathematical form of the general approach.  As a result the paper allows insight into and provides a stepping stone to the general theory.  Under referral an aperture under-goes simple scalar magnification and transverse translation.  The paper pays particular attention to referral to transverse planes in the neighbourhood of a focal point where the magnification may be positive, zero or negative.  Circular apertures are treated as special cases of elliptical apertures and the meaning of referred apertures of negative radius is explained briefly. (S Afr Optom 2012 71(1 3-11

Limited aperture effects on ultrasonic image reconstruction

International Nuclear Information System (INIS)

Kogan, V.G.; Rose, J.H.

1985-01-01

In the inverse Born approximation the shape of a weak scatterer can be determined from a knowledge of the backscattered ultrasonic amplitude for all directions of incidence and all frequencies. Two questions are considered. First, what information on the scatterer shape is preserved and what is degraded if the scattering data are available only within a limited set of incident directions (limited aperture). This problem is addressed for a spherical weakly scattering uniform flaw. It is shown that the problem of a general uniform ellipsoidal flaw can be reduced to the spherical case by a scale transformation; however, the apertures in these two cases must be related by the same transformation. Second, limited aperture and finite bandwidth Born inversions were performed for strongly scattering flaws (voids and cracks) using numerically generated scattering amplitudes. These inversions were then compared with the weak scattering analytic results, which show many common features

Variable aperture-based ptychographical iterative engine method.

Science.gov (United States)

Sun, Aihui; Kong, Yan; Meng, Xin; He, Xiaoliang; Du, Ruijun; Jiang, Zhilong; Liu, Fei; Xue, Liang; Wang, Shouyu; Liu, Cheng

2018-02-01

A variable aperture-based ptychographical iterative engine (vaPIE) is demonstrated both numerically and experimentally to reconstruct the sample phase and amplitude rapidly. By adjusting the size of a tiny aperture under the illumination of a parallel light beam to change the illumination on the sample step by step and recording the corresponding diffraction patterns sequentially, both the sample phase and amplitude can be faithfully reconstructed with a modified ptychographical iterative engine (PIE) algorithm. Since many fewer diffraction patterns are required than in common PIE and the shape, the size, and the position of the aperture need not to be known exactly, this proposed vaPIE method remarkably reduces the data acquisition time and makes PIE less dependent on the mechanical accuracy of the translation stage; therefore, the proposed technique can be potentially applied for various scientific researches. (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

Synthetic aperture tissue and flow ultrasound imaging

DEFF Research Database (Denmark)

Nikolov, Svetoslav

imaging applied to medical ultrasound. It is divided into two major parts: tissue and blood flow imaging. Tissue imaging using synthetic aperture algorithms has been investigated for about two decades, but has not been implemented in medical scanners yet. Among the other reasons, the conventional scanning...... and beamformation methods are adequate for the imaging modalities in clinical use - the B-mode imaging of tissue structures, and the color mapping of blood flow. The acquisition time, however, is too long, and these methods fail to perform real-time three-dimensional scans. The synthetic transmit aperture......, on the other hand, can create a Bmode image with as little as 2 emissions, thus significantly speeding-up the scan procedure. The first part of the dissertation describes the synthetic aperture tissue imaging. It starts with an overview of the efforts previously made by other research groups. A classification...

Autofocus algorithm for synthetic aperture radar imaging with large curvilinear apertures

Science.gov (United States)

Bleszynski, E.; Bleszynski, M.; Jaroszewicz, T.

2013-05-01

An approach to autofocusing for large curved synthetic aperture radar (SAR) apertures is presented. Its essential feature is that phase corrections are being extracted not directly from SAR images, but rather from reconstructed SAR phase-history data representing windowed patches of the scene, of sizes sufficiently small to allow the linearization of the forward- and back-projection formulae. The algorithm processes data associated with each patch independently and in two steps. The first step employs a phase-gradient-type method in which phase correction compensating (possibly rapid) trajectory perturbations are estimated from the reconstructed phase history for the dominant scattering point on the patch. The second step uses phase-gradient-corrected data and extracts the absolute phase value, removing in this way phase ambiguities and reducing possible imperfections of the first stage, and providing the distances between the sensor and the scattering point with accuracy comparable to the wavelength. The features of the proposed autofocusing method are illustrated in its applications to intentionally corrupted small-scene 2006 Gotcha data. The examples include the extraction of absolute phases (ranges) for selected prominent point targets. They are then used to focus the scene and determine relative target-target distances.

Statistical measurement of power spectrum density of large aperture optical component

International Nuclear Information System (INIS)

Xu Jiancheng; Xu Qiao; Chai Liqun

2010-01-01

According to the requirement of ICF, a method based on statistical theory has been proposed to measure the power spectrum density (PSD) of large aperture optical components. The method breaks the large-aperture wavefront into small regions, and obtains the PSD of the large-aperture wavefront by weighted averaging of the PSDs of the regions, where the weight factor is each region's area. Simulation and experiment demonstrate the effectiveness of the proposed method. They also show that, the obtained PSDs of the large-aperture wavefront by statistical method and sub-aperture stitching method fit well, when the number of small regions is no less than 8 x 8. The statistical method is not sensitive to translation stage's errors and environment instabilities, thus it is appropriate for PSD measurement during the process of optical fabrication. (authors)

Preparing patterned carbonaceous nanostructures directly by overexposure of PMMA using electron-beam lithography

Energy Technology Data Exchange (ETDEWEB)

Duan Huigao; Zhao Jianguo; Zhang Yongzhe; Xie Erqing [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Han Li [Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China)], E-mail: duanhg@gmail.com, E-mail: xieeq@lzu.edu.cn

2009-04-01

The overexposure process of poly(methyl methacrylate) (PMMA) was studied in detail using electron-beam lithography. It was found that PMMA films could be directly patterned without development due to the electron-beam-induced collapse of PMMA macromolecular chains. By analyzing the evolution of surface morphologies and compositions of the overexposed PMMA films, it was also found that the transformation of PMMA from positive to negative resist was a carbonization process, so patterned carbonaceous nanostructures could be prepared directly by overexposure of PMMA using electron-beam lithography. This simple one-step process for directly obtaining patterned carbonaceous nanostructures has promising potential application as a tool to make masks and templates, nanoelectrodes, and building blocks for MEMS and nanophotonic devices.

Programmable lithography engine (ProLE) grid-type supercomputer and its applications

Science.gov (United States)

Petersen, John S.; Maslow, Mark J.; Gerold, David J.; Greenway, Robert T.

2003-06-01

There are many variables that can affect lithographic dependent device yield. Because of this, it is not enough to make optical proximity corrections (OPC) based on the mask type, wavelength, lens, illumination-type and coherence. Resist chemistry and physics along with substrate, exposure, and all post-exposure processing must be considered too. Only a holistic approach to finding imaging solutions will accelerate yield and maximize performance. Since experiments are too costly in both time and money, accomplishing this takes massive amounts of accurate simulation capability. Our solution is to create a workbench that has a set of advanced user applications that utilize best-in-class simulator engines for solving litho-related DFM problems using distributive computing. Our product, ProLE (Programmable Lithography Engine), is an integrated system that combines Petersen Advanced Lithography Inc."s (PAL"s) proprietary applications and cluster management software wrapped around commercial software engines, along with optional commercial hardware and software. It uses the most rigorous lithography simulation engines to solve deep sub-wavelength imaging problems accurately and at speeds that are several orders of magnitude faster than current methods. Specifically, ProLE uses full vector thin-mask aerial image models or when needed, full across source 3D electromagnetic field simulation to make accurate aerial image predictions along with calibrated resist models;. The ProLE workstation from Petersen Advanced Lithography, Inc., is the first commercial product that makes it possible to do these intensive calculations at a fraction of a time previously available thus significantly reducing time to market for advance technology devices. In this work, ProLE is introduced, through model comparison to show why vector imaging and rigorous resist models work better than other less rigorous models, then some applications of that use our distributive computing solution are shown

Parameter Optimization of Multi-Element Synthetic Aperture Imaging Systems

Directory of Open Access Journals (Sweden)

Vera Behar

2007-03-01

Full Text Available In conventional ultrasound imaging systems with phased arrays, the further improvement of lateral resolution requires enlarging of the number of array elements that in turn increases both, the complexity and the cost, of imaging systems. Multi-element synthetic aperture focusing (MSAF systems are a very good alternative to conventional systems with phased arrays. The benefit of the synthetic aperture is in reduction of the system complexity, cost and acquisition time. In a MSAF system considered in the paper, a group of elements transmit and receive signals simultaneously, and the transmit beam is defocused to emulate a single element response. The echo received at each element of a receive sub-aperture is recorded in the computer memory. The process of transmission/reception is repeated for all positions of a transmit sub-aperture. All the data recordings associated with each corresponding pair "transmit-receive sub-aperture" are then focused synthetically producing a low-resolution image. The final high-resolution image is formed by summing of the all low-resolution images associated with transmit/receive sub-apertures. A problem of parameter optimization of a MSAF system is considered in this paper. The quality of imaging (lateral resolution and contrast is expressed in terms of the beam characteristics - beam width and side lobe level. The comparison between the MSAF system described in the paper and an equivalent conventional phased array system shows that the MSAF system acquires images of equivalent quality much faster using only a small part of the power per image.

Determination of the paraxial focal length using Zernike polynomials over different apertures

Science.gov (United States)

Binkele, Tobias; Hilbig, David; Henning, Thomas; Fleischmann, Friedrich

2017-02-01

The paraxial focal length is still the most important parameter in the design of a lens. As presented at the SPIE Optics + Photonics 2016, the measured focal length is a function of the aperture. The paraxial focal length can be found when the aperture approaches zero. In this work, we investigate the dependency of the Zernike polynomials on the aperture size with respect to 3D space. By this, conventional wavefront measurement systems that apply Zernike polynomial fitting (e.g. Shack-Hartmann-Sensor) can be used to determine the paraxial focal length, too. Since the Zernike polynomials are orthogonal over a unit circle, the aperture used in the measurement has to be normalized. By shrinking the aperture and keeping up with the normalization, the Zernike coefficients change. The relation between these changes and the paraxial focal length are investigated. The dependency of the focal length on the aperture size is derived analytically and evaluated by simulation and measurement of a strong focusing lens. The measurements are performed using experimental ray tracing and a Shack-Hartmann-Sensor. Using experimental ray tracing for the measurements, the aperture can be chosen easily. Regarding the measurements with the Shack-Hartmann- Sensor, the aperture size is fixed. Thus, the Zernike polynomials have to be adapted to use different aperture sizes by the proposed method. By doing this, the paraxial focal length can be determined from the measurements in both cases.

Surface enhanced thermo lithography

KAUST Repository

Coluccio, Maria Laura

2017-01-13

We used electroless deposition to fabricate clusters of silver nanoparticles (NPs) on a silicon substrate. These clusters are plasmonics devices that induce giant electromagnetic (EM) field increments. When those EM field are absorbed by the metal NPs clusters generate, in turn, severe temperature increases. Here, we used the laser radiation of a conventional Raman set-up to transfer geometrical patterns from a template of metal NPs clusters into a layer of thermo sensitive Polyphthalaldehyde (PPA) polymer. Temperature profile on the devices depends on specific arrangements of silver nanoparticles. In plane temperature variations may be controlled with (i) high nano-meter spatial precision and (ii) single Kelvin temperature resolution on varying the shape, size and spacing of metal nanostructures. This scheme can be used to generate strongly localized heat amplifications for applications in nanotechnology, surface enhanced thermo-lithography (SETL), biology and medicine (for space resolved cell ablation and treatment), nano-chemistry.

Surface enhanced thermo lithography

KAUST Repository

Coluccio, Maria Laura; Alabastri, Alessandro; Bonanni, Simon; Majewska, Roksana; Dattoli, Elisabetta; Barberio, Marianna; Candeloro, Patrizio; Perozziello, Gerardo; Mollace, Vincenzo; Di Fabrizio, Enzo M.; Gentile, Francesco

2017-01-01

We used electroless deposition to fabricate clusters of silver nanoparticles (NPs) on a silicon substrate. These clusters are plasmonics devices that induce giant electromagnetic (EM) field increments. When those EM field are absorbed by the metal NPs clusters generate, in turn, severe temperature increases. Here, we used the laser radiation of a conventional Raman set-up to transfer geometrical patterns from a template of metal NPs clusters into a layer of thermo sensitive Polyphthalaldehyde (PPA) polymer. Temperature profile on the devices depends on specific arrangements of silver nanoparticles. In plane temperature variations may be controlled with (i) high nano-meter spatial precision and (ii) single Kelvin temperature resolution on varying the shape, size and spacing of metal nanostructures. This scheme can be used to generate strongly localized heat amplifications for applications in nanotechnology, surface enhanced thermo-lithography (SETL), biology and medicine (for space resolved cell ablation and treatment), nano-chemistry.

Permeability and dispersivity of variable-aperture fracture systems

International Nuclear Information System (INIS)

Tsang, Y.W.; Tsang, C.F.

1990-01-01

A number of recent experiments have pointed out the need of including the effects of aperture variation within each fracture in predicting flow and transport properties of fractured media. This paper introduces a new approach in which medium properties, such as the permeability to flow and dispersivity in tracer transport, are correlated to only three statistical parameters describing the fracture aperture probability distribution and the aperture spatial correlation. We demonstrate how saturated permeability and relative permeabilities for flow, as well as dispersion for solute transport in fractures may be calculated. We are in the process of examining the applicability of these concepts to field problems. Results from the evaluation and analysis of the recent Stripa-3D field data are presented. 13 refs., 10 figs

Driving imaging and overlay performance to the limits with advanced lithography optimization

Science.gov (United States)

Mulkens, Jan; Finders, Jo; van der Laan, Hans; Hinnen, Paul; Kubis, Michael; Beems, Marcel

2012-03-01

Immersion lithography is being extended to 22-nm and even below. Next to generic scanner system improvements, application specific solutions are needed to follow the requirements for CD control and overlay. Starting from the performance budgets, this paper discusses how to improve (in volume manufacturing environment) CDU towards 1-nm and overlay towards 3-nm. The improvements are based on deploying the actuator capabilities of the immersion scanner. The latest generation immersion scanners have extended the correction capabilities for overlay and imaging, offering freeform adjustments of lens, illuminator and wafer grid. In order to determine the needed adjustments the recipe generation per user application is based on a combination wafer metrology data and computational lithography methods. For overlay, focus and CD metrology we use an angle resolved optical scatterometer.

Highly uniform parallel microfabrication using a large numerical aperture system

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zi-Yu; Su, Ya-Hui, E-mail: ustcsyh@ahu.edu.cn, E-mail: dongwu@ustc.edu.cn [School of Electrical Engineering and Automation, Anhui University, Hefei 230601 (China); Zhang, Chen-Chu; Hu, Yan-Lei; Wang, Chao-Wei; Li, Jia-Wen; Chu, Jia-Ru; Wu, Dong, E-mail: ustcsyh@ahu.edu.cn, E-mail: dongwu@ustc.edu.cn [CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230026 (China)

2016-07-11

In this letter, we report an improved algorithm to produce accurate phase patterns for generating highly uniform diffraction-limited multifocal arrays in a large numerical aperture objective system. It is shown that based on the original diffraction integral, the uniformity of the diffraction-limited focal arrays can be improved from ∼75% to >97%, owing to the critical consideration of the aperture function and apodization effect associated with a large numerical aperture objective. The experimental results, e.g., 3 × 3 arrays of square and triangle, seven microlens arrays with high uniformity, further verify the advantage of the improved algorithm. This algorithm enables the laser parallel processing technology to realize uniform microstructures and functional devices in the microfabrication system with a large numerical aperture objective.

Electromagnetic field scattering by a triangular aperture.

Science.gov (United States)

Harrison, R E; Hyman, E

1979-03-15

The multiple Laplace transform has been applied to analysis and computation of scattering by a double triangular aperture. Results are obtained which match far-field intensity distributions observed in experiments. Arbitrary polarization components, as well as in-phase and quadrature-phase components, may be determined, in the transform domain, as a continuous function of distance from near to far-field for any orientation, aperture, and transformable waveform. Numerical results are obtained by application of numerical multiple inversions of the fully transformed solution.

Planned posterior assisted levitation in severe subluxated cataract: Surgical technique and clinical results

Directory of Open Access Journals (Sweden)

Tova Lifshitz

2012-01-01

Full Text Available We report the surgical technique and outcome of planned posterior assisted levitation (P-PAL in four cases of subluxated cataract. P-PAL was planned as the preferred approach in all cases. A spatula was inserted via the pars plana, the whole lens was lifted to the anterior chamber and then removed through a scleral tunnel incision. Anterior chamber intraocular lenses were implanted in all cases. All four eyes had severe subluxation of the crystalline lenses with marked phacodonesis. Two eyes had history of blunt trauma, and the other two eyes had severe pseudoexfoliation with spontaneous lens subluxation. Follow-up ranged from 1 to 2 years in three cases. The postoperative visual acuity was 20/80 or better. No intraoperative complications were observed. In conclusion, the P-PAL technique was successfully performed during cataract surgery in four eyes with severe subluxated cataracts. There were no complications over the long-term follow-up.

Fabrication of biomimetic dry-adhesion structures through nanosphere lithography

Science.gov (United States)

Kuo, P. C.; Chang, N. W.; Suen, Y.; Yang, S. Y.

2018-03-01

Components with surface nanostructures suitable for biomimetic dry adhesion have a great potential in applications such as gecko tape, climbing robots, and skin patches. In this study, a nanosphere lithography technique with self-assembly nanospheres was developed to achieve effective and efficient fabrication of dry-adhesion structures. Self-assembled monolayer nanospheres with high regularity were obtained through tilted dip-coating. Reactive-ion etching of the self-assembled nanospheres was used to fabricate nanostructures of different shapes and aspect ratios by varying the etching time. Thereafter, nickel molds with inverse nanostructures were replicated using the electroforming process. Polydimethylsiloxane (PDMS) nanostructures were fabricated through a gas-assisted hot-embossing method. The pulling test was performed to measure the shear adhesion on the glass substrate of a sample, and the static contact angle was measured to verify the hydrophobic property of the structure. The enhancement of the structure indicates that the adhesion force increased from 1.2 to 4.05 N/cm2 and the contact angle increased from 118.6° to 135.2°. This columnar structure can effectively enhance the adhesion ability of PDMS, demonstrating the potential of using nanosphere lithography for the fabrication of adhesive structures.

Fabrication of biopolymer cantilevers using nanoimprint lithography

DEFF Research Database (Denmark)

Keller, Stephan Sylvest; Feidenhans'l, Nikolaj Agentoft; Fisker-Bødker, Nis

2011-01-01

The biodegradable polymer poly(l-lactide) (PLLA) was introduced for the fabrication of micromechanical devices. For this purpose, thin biopolymer films with thickness around 10 μm were spin-coated on silicon substrates. Patterning of microcantilevers is achieved by nanoimprint lithography. A major...... challenge was the high adhesion between PLLA and silicon stamp. Optimized stamp fabrication and the deposition of a 125 nm thick fluorocarbon anti-stiction coating on the PLLA allowed the fabrication of biopolymer cantilevers. Resonance frequency measurements were used to estimate the Young’s modulus...

Photoinhibition superresolution lithography

Science.gov (United States)

Forman, Darren Lawrence

While the prospect of nanoscale manufacturing has generated tremendous excitement, arbitrary patterning at nanometer length scales cannot be brought about with current photolithography---the technology that for decades has driven electronics miniaturization and enabled mass production of digital logic, memory, MEMS and flat-panel displays. This is due to the relatively long wavelength of light and diffraction, which imposes a physical not technological limit on the resolution of a far-field optical pattern. Photoinhibited superresolution (PInSR) lithography is a new scheme designed to beat the diffraction limit through two-color confinement of photopolymerization and, via efficient single-photon absorption kinetics, also be high-throughput capable. This thesis describes development of an integrated optical and materials system for investigating spatiotemporal dynamics of photoinhibited superresolution lithography, with a demonstrated 3x superresolution beyond the diffraction limit. The two-color response, arising from orthogonal photogeneration of species that participate in competing reactions, is shown to be highly complex. This is both a direct and indirect consequence of mobility. Interesting trade-offs arise: thin-film resins (necessitated by single-photon absorption kinetics) require high viscosity for film stability, but the photoinhibition effect is suppressed in viscous resins. Despite this apparent suppression, which can be overcome with high excitation of the photoinhibition system, the low mobility afforded by viscous materials is beneficial for confinement of active species. Diffusion-induced blurring of patterned photoinhibition is problematic in a resin with viscosity = 1,000 cP, and overcome in a resin with viscosity eta = 500,000 cP. Superresolution of factor 3x beyond the diffraction limit is demonstrated at 0.2 NA, with additional results indicating superresolution ability at 1.2 NA. Investigating the effect of diminished photoinhibition efficacy

Biomineral repair of abalone shell apertures.

Science.gov (United States)

Cusack, Maggie; Guo, Dujiao; Chung, Peter; Kamenos, Nicholas A

2013-08-01

The shell of the gastropod mollusc, abalone, is comprised of nacre with an outer prismatic layer that is composed of either calcite or aragonite or both, depending on the species. A striking characteristic of the abalone shell is the row of apertures along the dorsal margin. As the organism and shell grow, new apertures are formed and the preceding ones are filled in. Detailed investigations, using electron backscatter diffraction, of the infill in three species of abalone: Haliotis asinina, Haliotis gigantea and Haliotis rufescens reveals that, like the shell, the infill is composed mainly of nacre with an outer prismatic layer. The infill prismatic layer has identical mineralogy as the original shell prismatic layer. In H. asinina and H. gigantea, the prismatic layer of the shell and infill are made of aragonite while in H. rufescens both are composed of calcite. Abalone builds the infill material with the same high level of biological control, replicating the structure, mineralogy and crystallographic orientation as for the shell. The infill of abalone apertures presents us with insight into what is, effectively, shell repair. Copyright © 2013 Elsevier Inc. All rights reserved.

Adjustable liquid aperture to eliminate undesirable light in holographic projection.

Science.gov (United States)

Wang, Di; Liu, Chao; Li, Lei; Zhou, Xin; Wang, Qiong-Hua

2016-02-08

In this paper, we propose an adjustable liquid aperture to eliminate the undesirable light in a holographic projection. The aperture is based on hydrodynamic actuation. A chamber is formed with a cylindrical tube. A black droplet is filled in the sidewall of the cylinder tube and the outside space is the transparent oil which is immiscible with the black droplet. An ultrathin glass sheet is attached on the bottom substrate of the device and a black shading film is secured to the central area of the glass sheet. By changing the volume of the black droplet, the black droplet will move to the middle or sidewall due to hydrodynamic actuation, so the device can be used as an adjustable aperture. A divergent spherical wave and a solid lens are used to separate the focus planes of the reconstructed image and diffraction beams induced by the liquid crystal on silicon in the holographic projection. Then the aperture is used to eliminate the diffraction beams by adjusting the size of the liquid aperture and the holographic projection does not have undesirable light.

Focusing optical waves with a rotationally symmetric sharp-edge aperture

Science.gov (United States)

Hu, Yanwen; Fu, Shenhe; Li, Zhen; Yin, Hao; Zhou, Jianying; Chen, Zhenqiang

2018-04-01

While there has been various kinds of patterned structures proposed for wave focusing, these patterned structures usually involve complicated lithographic techniques since the element size of the patterned structures should be precisely controlled in microscale or even nanoscale. Here we propose a new and straightforward method for focusing an optical plane wave in free space with a rotationally symmetric sharp-edge aperture. The focusing phenomenon of wave is realized by superposition of a portion of the higher-order symmetric plane waves generated from the sharp edges of the apertures, in contrast to previously focusing techniques which usually depend on a curved phase. We demonstrate both experimentally and theoretically the focusing effect with a series of apertures having different rotational symmetry, and find that the intensity of the hotspots could be controlled by the symmetric strength of the sharp-edge apertures. The presented results would advance the conventional wisdom that light would diffract in all directions and become expanding when it propagates through an aperture. The proposed method is easy to be processed, and might open potential applications in interferometry, image, and superresolution.

Maximum nondiffracting propagation distance of aperture-truncated Airy beams

Science.gov (United States)

Chu, Xingchun; Zhao, Shanghong; Fang, Yingwu

2018-05-01

Airy beams have called attention of many researchers due to their non-diffracting, self-healing and transverse accelerating properties. A key issue in research of Airy beams and its applications is how to evaluate their nondiffracting propagation distance. In this paper, the critical transverse extent of physically realizable Airy beams is analyzed under the local spatial frequency methodology. The maximum nondiffracting propagation distance of aperture-truncated Airy beams is formulated and analyzed based on their local spatial frequency. The validity of the formula is verified by comparing the maximum nondiffracting propagation distance of an aperture-truncated ideal Airy beam, aperture-truncated exponentially decaying Airy beam and exponentially decaying Airy beam. Results show that the formula can be used to evaluate accurately the maximum nondiffracting propagation distance of an aperture-truncated ideal Airy beam. Therefore, it can guide us to select appropriate parameters to generate Airy beams with long nondiffracting propagation distance that have potential application in the fields of laser weapons or optical communications.

Aperture and optics–measurements and conclusions

CERN Document Server

Redaelli, S; Bruce, R; Buffat, X; Giovannozzi, M; Lamont, M; Miyamoto, R; Müller, G; Tomás, R; Vanbavinckhove, G; Wenninger, J

2012-01-01

In 2011, the LHC has delivered collisions with different optics configurations in the four interaction points, at an operating energy of 3.5 TeV. The performance has been pushed during the year until a final configuration with 3 IPs squeezed to 1 m was achieved. Correspondingly, the machine aperture has been measured in the different configurations at injection and at top energy, to ensure a safe operation in all conditions of $\\beta^*$ and crossing angle configuration. In this paper, the 2011 commissioning experience of LHC optics is reviewed and the results of aperture measurements are presented. Measurement requirements for 2012 and possible improvements are also discussed.

Enhanced transmission of transverse electric waves through periodic arrays of structured subwavelength apertures

DEFF Research Database (Denmark)

Xiao, Sanshui; Peng, Liang; Mortensen, Asger

2010-01-01

Transmission through sub-wavelength apertures in perfect metals is expected to be strongly suppressed. However, by structural engineering of the apertures, we numerically demonstrate that the transmission of transverse electric waves through periodic arrays of subwavelength apertures in a thin...... metallic film can be significantly enhanced. Based on equivalent circuit theory analysis, periodic arrays of square structured subwavelength apertures are obtained with a 1900-fold transmission enhancement factor when the side length a of the apertures is 10 times smaller than the wavelength (a/λ =0...

Fast decoding algorithms for coded aperture systems

International Nuclear Information System (INIS)

Byard, Kevin

2014-01-01

Fast decoding algorithms are described for a number of established coded aperture systems. The fast decoding algorithms for all these systems offer significant reductions in the number of calculations required when reconstructing images formed by a coded aperture system and hence require less computation time to produce the images. The algorithms may therefore be of use in applications that require fast image reconstruction, such as near real-time nuclear medicine and location of hazardous radioactive spillage. Experimental tests confirm the efficacy of the fast decoding techniques

Scale-dependent Patterns in One-dimensional Fracture Spacing and Aperture Data

Science.gov (United States)

Roy, A.; Perfect, E.

2013-12-01

One-dimensional scanline data about fracture spacing and size attributes such as aperture or length are mostly considered in separate studies that compute the cumulative frequency of these attributes without regard to their actual spatial sequence. In a previous study, we showed that spacing data can be analyzed using lacunarity to identify whether fractures occur in clusters. However, to determine if such clusters also contain the largest fractures in terms of a size attribute such as aperture, it is imperative that data about the size attribute be integrated with information about fracture spacing. While for example, some researchers have considered aperture in conjunction with spacing, their analyses were either applicable only to a specific type of data (e.g. multifractal) or failed to characterize the data at different scales. Lacunarity is a technique for analyzing multi-scale non-binary data and is ideally-suited for characterizing scanline data with spacing and aperture values. We present a technique that can statistically delineate the relationship between size attributes and spatial clustering. We begin by building a model scanline that has complete partitioning of fractures with small and large apertures between the intercluster regions and clusters. We demonstrate that the ratio of lacunarity for this model to that of its counterpart for a completely randomized sequence of apertures can be used to determine whether large-aperture fractures preferentially occur next to each other. The technique is then applied to two natural fracture scanline datasets, one with most of the large apertures occurring in fracture clusters, and the other with more randomly-spaced fractures, without any specific ordering of aperture values. The lacunarity ratio clearly discriminates between these two datasets and, in the case of the first example, it is also able to identify the range of scales over which the widest fractures are clustered. The technique thus developed for

Dynamic aperture and transverse proton diffusion in HERA

International Nuclear Information System (INIS)

Zimmermann, F.

1994-04-01

The dynamic aperture caused by persistent-current nonlinear field errors is an important concern in the design of superconducting hadron storage rings. The HERA proton ring is the second superconducting accelerator in operation. In this lecture note, its measured dynamic aperture is compared with that inferred from comprehensive trackig studies. To understand the difference between prediction and measurement, a semi-analytical method is developed for evaluating transverse diffusion rates due to various processes, such as modulational diffusion or sweeping diffusion this analysis makes use of parameters for high-order resonances in the transverse phase space, which are obtained by normal-form algorithms using differential-algebra software. This semi-analytical results are consistent wit the measurements, and suggest that the actual dynamic aperture is caused by an interplay of tune modulation and nonlinear magnetic fields

Objective for EUV microscopy, EUV lithography, and x-ray imaging

Science.gov (United States)

Bitter, Manfred; Hill, Kenneth W.; Efthimion, Philip

2016-05-03

Disclosed is an imaging apparatus for EUV spectroscopy, EUV microscopy, EUV lithography, and x-ray imaging. This new imaging apparatus could, in particular, make significant contributions to EUV lithography at wavelengths in the range from 10 to 15 nm, which is presently being developed for the manufacturing of the next-generation integrated circuits. The disclosure provides a novel adjustable imaging apparatus that allows for the production of stigmatic images in x-ray imaging, EUV imaging, and EUVL. The imaging apparatus of the present invention incorporates additional properties compared to previously described objectives. The use of a pair of spherical reflectors containing a concave and convex arrangement has been applied to a EUV imaging system to allow for the image and optics to all be placed on the same side of a vacuum chamber. Additionally, the two spherical reflector segments previously described have been replaced by two full spheres or, more precisely, two spherical annuli, so that the total photon throughput is largely increased. Finally, the range of permissible Bragg angles and possible magnifications of the objective has been largely increased.

High throughput, high resolution enzymatic lithography process: effect of crystallite size, moisture, and enzyme concentration.

Science.gov (United States)

Mao, Zhantong; Ganesh, Manoj; Bucaro, Michael; Smolianski, Igor; Gross, Richard A; Lyons, Alan M

2014-12-08

By bringing enzymes into contact with predefined regions of a surface, a polymer film can be selectively degraded to form desired patterns that find a variety of applications in biotechnology and electronics. This so-called "enzymatic lithography" is an environmentally friendly process as it does not require actinic radiation or synthetic chemicals to develop the patterns. A significant challenge to using enzymatic lithography has been the need to restrict the mobility of the enzyme in order to maintain control of feature sizes. Previous approaches have resulted in low throughput and were limited to polymer films only a few nanometers thick. In this paper, we demonstrate an enzymatic lithography system based on Candida antartica lipase B (CALB) and poly(ε-caprolactone) (PCL) that can resolve fine-scale features, (<1 μm across) in thick (0.1-2.0 μm) polymer films. A Polymer Pen Lithography (PPL) tool was developed to deposit an aqueous solution of CALB onto a spin-cast PCL film. Immobilization of the enzyme on the polymer surface was monitored using fluorescence microscopy by labeling CALB with FITC. The crystallite size in the PCL films was systematically varied; small crystallites resulted in significantly faster etch rates (20 nm/min) and the ability to resolve smaller features (as fine as 1 μm). The effect of printing conditions and relative humidity during incubation is also presented. Patterns formed in the PCL film were transferred to an underlying copper foil demonstrating a "Green" approach to the fabrication of printed circuit boards.

Spaceborne L-band Radiometers: Push-broom or Synthetic Aperture?

DEFF Research Database (Denmark)

Skou, Niels

2004-01-01

L-band radiometers can measure ocean salinity and soil moisture from space. A synthetic aperture radiometer system, SMOS, is under development by ESA for launch in 2007. A real aperture push-broom system, Aquarius, has been approved by NASA for launch in 2008. Pros et cons of the two fundamentally...

Lithography-based fabrication of nanopore arrays in freestanding SiN and graphene membranes

Science.gov (United States)

Verschueren, Daniel V.; Yang, Wayne; Dekker, Cees

2018-04-01

We report a simple and scalable technique for the fabrication of nanopore arrays on freestanding SiN and graphene membranes based on electron-beam lithography and reactive ion etching. By controlling the dose of the single-shot electron-beam exposure, circular nanopores of any size down to 16 nm in diameter can be fabricated in both materials at high accuracy and precision. We demonstrate the sensing capabilities of these nanopores by translocating dsDNA through pores fabricated using this method, and find signal-to-noise characteristics on par with transmission-electron-microscope-drilled nanopores. This versatile lithography-based approach allows for the high-throughput manufacturing of nanopores and can in principle be used on any substrate, in particular membranes made out of transferable two-dimensional materials.

DESIGN OF MULTILAYER APERTURE COUPLED STACKED MICROSTRIP PATCH ANTENNA FOR WLAN APPLICATIONS

Directory of Open Access Journals (Sweden)

P. Jothilakshmi

2015-10-01

Full Text Available One of the major drawbacks of microstrip patch antenna is its narrow bandwidth. The solution of this problem is to use aperture coupled stacked micro strip patch antenna. The antenna uses a combination of aperture coupled feeding technique and multi- layer radiating patch in order for the radiating elements are increase the gain bandwidth. The ‘I’ and ‘H’ shaped aperture slots are etched onto the ground plane. It is used to transfer the energy from feed line to stacked patch. A variation of the feed line length controls the selected aperture slots to be active. The waves from the selected activated aperture slots will radiate to particular radiating patch and achieve the desired resonant frequency. The air gap is used to avoid coupling loss between the aperture slots and stacked patches. The observed simulated and measured results show that the proposed antenna structure resonated at 2.51 GHz frequency with reduced return loss and optimum voltage standing wave ratio.

MD1405: Demonstration of forced dynamic aperture measurements at injection

CERN Document Server

Carlier, Felix Simon; Persson, Tobias Hakan Bjorn; Tomas Garcia, Rogelio; CERN. Geneva. ATS Department

2017-01-01

Accurate measurements of dynamic aperture become more important for the LHC as it advances into increasingly nonlinear regimes of operations, as well as for the High Luminosity LHC where machine nonlinearities will have a significantly larger impact. Direct dynamic aperture measurements at top energy in the LHC are challenging, and conventional single kick methods are not viable. Dynamic aperture measurements under forced oscillation of AC dipoles have been proposed as s possible alternative observable. A first demonstration of forced DA measurements at injections energy is presented.

Nanomanipulation of 2 inch wafer fabrication of vertically aligned carbon nanotube arrays by nanoimprint lithography

DEFF Research Database (Denmark)

Bu, Ian Y. Y.; Eichhorn, Volkmar; Carlson, Kenneth

2011-01-01

Carbon nanotube (CNT) arrays are typically defined by electron beam lithography (EBL), and hence limited to small areas due to the low throughput. To obtain wafer‐scale fabrication we propose large area thermal nanoimprint lithography (NIL). A 2‐inch stamp master is defined using EBL for subsequent......, efficient production of wafer‐scale/larger arrays of CNTs has been achieved. The CNTs have been deposited by wafer‐scale plasma enhanced chemical vapour deposition (PECVD) of C2H2/NH3. Substrates containing such nanotubes have been used to automate nanorobotic manipulation sequences of individual CNTs...

Fabrication of submicron structures in nanoparticle/polymer composite by holographic lithography and reactive ion etching

Science.gov (United States)

Zhang, A. Ping; He, Sailing; Kim, Kyoung Tae; Yoon, Yong-Kyu; Burzynski, Ryszard; Samoc, Marek; Prasad, Paras N.

2008-11-01

We report on the fabrication of nanoparticle/polymer submicron structures by combining holographic lithography and reactive ion etching. Silica nanoparticles are uniformly dispersed in a (SU8) polymer matrix at a high concentration, and in situ polymerization (cross-linking) is used to form a nanoparticle/polymer composite. Another photosensitive SU8 layer cast upon the nanoparticle/SU8 composite layer is structured through holographic lithography, whose pattern is finally transferred to the nanoparticle/SU8 layer by the reactive ion etching process. Honeycomb structures in a submicron scale are experimentally realized in the nanoparticle/SU8 composite.

Quadratic nonlinear optics to assess the morphology of riboflavin doped chitosan for eco-friendly lithography

Science.gov (United States)

Ray, Cédric; Caillau, Mathieu; Jonin, Christian; Benichou, Emmanuel; Moulin, Christophe; Salmon, Estelle; Maldonado, Melissa E.; Gomes, Anderson S. L.; Monnier, Virginie; Laurenceau, Emmanuelle; Leclercq, Jean-Louis; Chevolot, Yann; Delair, Thierry; Brevet, Pierre-François

2018-06-01

We report the use of the Second Harmonic Generation response from a riboflavin doped chitosan film as a characterization method of the film morphology. This film is of particular interest in the development of new and bio-sourced material for eco-friendly UV lithography. The method allows us to determine how riboflavin is distributed as a function of film depth in the sample. This possibility is of importance in order to have a better understanding of the riboflavin influence in chitosan films during the lithography process. On the contrary, linear optical techniques provide no information beyond the mere confirmation of the riboflavin presence.

Uniformity of LED light illumination in application to direct imaging lithography

Science.gov (United States)

Huang, Ting-Ming; Chang, Shenq-Tsong; Tsay, Ho-Lin; Hsu, Ming-Ying; Chen, Fong-Zhi

2016-09-01

Direct imaging has widely applied in lithography for a long time because of its simplicity and easy-maintenance. Although this method has limitation of lithography resolution, it is still adopted in industries. Uniformity of UV irradiance for a designed area is an important requirement. While mercury lamps were used as the light source in the early stage, LEDs have drawn a lot of attention for consideration from several aspects. Although LED has better and better performance, arrays of LEDs are required to obtain desired irradiance because of limitation of brightness for a single LED. Several effects are considered that affect the uniformity of UV irradiance such as alignment of optics, temperature of each LED, performance of each LED due to production uniformity, and pointing of LED module. Effects of these factors are considered to study the uniformity of LED Light Illumination. Numerical analysis is performed by assuming a serious of control factors to have a better understanding of each factor.

Fabrication of Monolithic Bridge Structures by Vacuum-Assisted Capillary-Force Lithography

KAUST Repository

Kwak, Rhokyun

2009-04-06

Monolithic bridge structures were fabricated by using capillary-force lithography (CFL), which was developed for patterning polymers over a large area by combining essential features of nanoimprint lithography and capillarity. A patterned soft mold was placed on a spin-coated UV-curable resin on a substrate. The polymer then moved into the cavity of the mold by capillary action and then solidified after exposure to UV radiation. The uncured resin was forced to migrate into the cavity of a micropatterned PDMS mold by capillarity, and then exposed to UV radiation under a high-energy mercury lamp with intensity. A rotary pump was then turned on, decreasing the air pressure in the chamber. SEM images were taken with a high-resolution SEM at an acceleration voltage greater than 15 kV. It was observed that when the air pressure was rapidly reduced to a low vacuum, the top layer moved into the nanochannels with a meniscus at the interface between the nanoscale PUA and the base structure.

Ion projection lithography: November 2000 status and sub-70-nm prospects

Science.gov (United States)

Kaesmaier, Rainer; Wolter, Andreas; Loeschner, Hans; Schunck, Stefan

2000-10-01

Among all next generation lithography (NGL) options Ion Projection Lithography (IPL) offers the smallest (particle) wavelength of 5x10- 5nm (l00keV Helium ions). Thus, 4x reduction ion-optics has diffraction limits IOS) has been realized and assembled. In parallel to the PDT-IOS effort, at Leica Jena a test bench for a vertical vacuum 300mm-wafer stage has been realized. Operation of magnetic bearing supported stage movement has already been demonstrated. As ASML vacuum compatible optical wafer alignment system, with 3nm(3(sigma) ) precision demonstrated in air, has been integrated to this wafer test bench system recently. Parallel to the IPL tool development, Infineon Technologies Mask House and the Institute for Microelectronics Stuttgart are intensively working on the development of IPL stencil masks with success in producing 150mm and 200mm stencil masks as reported elsewhere. This paper is focused on information about the status of the PDT-IOS tool.

Apodised aperture using rotation of plane of polarization

International Nuclear Information System (INIS)

Simmons, W.W.; Leppelmeier, G.W.; Johnson, B.C.

1975-01-01

An apodised aperture based on the rotation of plane of polarization producing desirable characteristics on a transmitted light beam such as beam profiling in high flux laser amplifier chains is described. The apodised aperture is made with a lossless element by using one or more polarizers and/or analyzers and magneto-optical Faraday means for selectively rotating the plane of polarized radiation over the cross section to effect the desired apodisation

New self-assembly strategies for next generation lithography

Science.gov (United States)

Schwartz, Evan L.; Bosworth, Joan K.; Paik, Marvin Y.; Ober, Christopher K.

2010-04-01

Future demands of the semiconductor industry call for robust patterning strategies for critical dimensions below twenty nanometers. The self assembly of block copolymers stands out as a promising, potentially lower cost alternative to other technologies such as e-beam or nanoimprint lithography. One approach is to use block copolymers that can be lithographically patterned by incorporating a negative-tone photoresist as the majority (matrix) phase of the block copolymer, paired with photoacid generator and a crosslinker moiety. In this system, poly(α-methylstyrene-block-hydroxystyrene)(PαMS-b-PHOST), the block copolymer is spin-coated as a thin film, processed to a desired microdomain orientation with long-range order, and then photopatterned. Therefore, selfassembly of the block copolymer only occurs in select areas due to the crosslinking of the matrix phase, and the minority phase polymer can be removed to produce a nanoporous template. Using bulk TEM analysis, we demonstrate how the critical dimension of this block copolymer is shown to scale with polymer molecular weight using a simple power law relation. Enthalpic interactions such as hydrogen bonding are used to blend inorganic additives in order to enhance the etch resistance of the PHOST block. We demonstrate how lithographically patternable block copolymers might fit in to future processing strategies to produce etch-resistant self-assembled features at length scales impossible with conventional lithography.

11 T Twin-Aperture Nb$_3$Sn Dipole Development for LHC Upgrades

CERN Document Server

Zlobin, A V; Apollinari, G; Auchmann, B; Barzi, E; Izquierdo Bermudez, S; Bossert, R; Buehler, M; Chlachidze, G; DiMarco, J; Karppinen, M; Nobrega, F; Novitski, I; Rossi, L; Smekens, D; Tartaglia, M; Turrioni, D; Velev, Genadi

2015-01-01

FNAL and CERN are developing a twin-aperture 11 T Nb$_{3}$Sn dipole suitable for installation in the LHC. This paper describes the design and parameters of the 11 T dipole developed at FNAL for the LHC upgrades in both single-aperture and twin-aperture configurations, and presents details of the constructed dipole models. Results of studies of magnet quench performance, quench protection and magnetic measurements performed using short 1 m long coils in the dipole mirror and single-aperture configurations are reported and discussed.

11 T Twin-Aperture Nb$_3$Sn Dipole Development for LHC Upgrades

Energy Technology Data Exchange (ETDEWEB)

Zlobin, A. V. [Fermilab; Andreev, N. [Fermilab; Apollinari, G. [Fermilab; Auchmann, B. [CERN; Barzi, E. [Fermilab; Izquierdo Bermudez, S. [CERN; Bossert, R. [Fermilab; Buehler, M. [Fermilab; Chlachidze, G. [Fermilab; DiMarco, J. [Fermilab; Karppinen, M. [CERN; Nobrega, F. [Fermilab; Novitski, I. [CERN; Rossi, L. [CERN; Smekens, D. [CERN; Tartaglia, M. [Fermilab; Turrioni, D. [Fermilab; Velev, Genadi [Fermilab

2015-01-01

FNAL and CERN are developing a twin-aperture 11 T Nb3Sn dipole suitable for installation in the LHC. This paper describes the design and parameters of the 11 T dipole developed at FNAL for the LHC upgrades in both single-aperture and twin-aperture configurations, and presents details of the constructed dipole models. Results of studies of magnet quench performance, quench protection and magnetic measurements performed using short 1 m long coils in the dipole mirror and single-aperture configurations are reported and discussed.

A functional probe with bowtie aperture and bull's eye structure for nanolithograph

International Nuclear Information System (INIS)

Wang Shuo; Wang Qiao; Guo Ying-Yan; Pan Shi; Li Xu-Feng

2012-01-01

The bowtie aperture surrounded by concentric gratings (the bull's eye structure) integrated on the near-field scanning optical microscopy (NSOM) probe (aluminum coated fiber tip) for nanolithography has been investigated using the finite-difference time domain (FDTD) method. By modifying the parameters of the bowtie aperture and the concentric gratings, a maximal field enhancement factor of 391.69 has been achieved, which is 18 times larger than that obtained from the single bowtie aperture. Additionally, the light spot depends on the gap size of the bowtie aperture and can be confined to sub-wavelength. The superiority of the combination of the bowtie aperture and the bull's eye structure is confirmed, and the mechanism for the electric field enhancement in this derived structure is analyzed

A functional probe with bowtie aperture and bull's eye structure for nanolithograph

Science.gov (United States)

Wang, Shuo; Li, Xu-Feng; Wang, Qiao; Guo, Ying-Yan; Pan, Shi

2012-10-01

The bowtie aperture surrounded by concentric gratings (the bull's eye structure) integrated on the near-field scanning optical microscopy (NSOM) probe (aluminum coated fiber tip) for nanolithography has been investigated using the finite-difference time domain (FDTD) method. By modifying the parameters of the bowtie aperture and the concentric gratings, a maximal field enhancement factor of 391.69 has been achieved, which is 18 times larger than that obtained from the single bowtie aperture. Additionally, the light spot depends on the gap size of the bowtie aperture and can be confined to sub-wavelength. The superiority of the combination of the bowtie aperture and the bull's eye structure is confirmed, and the mechanism for the electric field enhancement in this derived structure is analyzed.

Tibial valgus aperture osteotomy

International Nuclear Information System (INIS)

De los Rios G, Adolfo Leon; Saavedra Abadia, Adolfo Leon; Palacios, Julio

2005-01-01

This study is based on work carried out a The knee clinic at the arthroscopic surgery unit of the Institute of osteo-articular diseases, Imbanaco Medical Centre, The University Hospital of the Valle (Cali-Colombia) and The Fractures Clinic Ltd. (Palmira-Valle). This is a descriptive study, which demonstrates very positive outcomes for aperture osteotomy, without detracting from the importance of, and the progress made in uni-compartmental and total joint articular replacements of the knee. 10 patients were treated with a highs tibial open osteotomy between November 1988 and December 2002: 3 had post-traumatic deformities, without arthrosic alterations; 1 had pseudo-arthrosis caused by a failed corrective procedure; 1 had complex instability of the knee with osseous varus; 6 had a degenerative lesion of the medial meniscus with medial condral alterations. Follow-up was form 12 to 54 months. Treatment involved a tibial valgus aperture osteotomy and osteo-synthesis. Evaluation was carried out using the International Knee Documentation Committee (IKDC) scale, the For Special Surgery and The Knee Society Score

Integrating nanosphere lithography in device fabrication

Science.gov (United States)

Laurvick, Tod V.; Coutu, Ronald A.; Lake, Robert A.

2016-03-01

This paper discusses the integration of nanosphere lithography (NSL) with other fabrication techniques, allowing for nano-scaled features to be realized within larger microelectromechanical system (MEMS) based devices. Nanosphere self-patterning methods have been researched for over three decades, but typically not for use as a lithography process. Only recently has progress been made towards integrating many of the best practices from these publications and determining a process that yields large areas of coverage, with repeatability and enabled a process for precise placement of nanospheres relative to other features. Discussed are two of the more common self-patterning methods used in NSL (i.e. spin-coating and dip coating) as well as a more recently conceived variation of dip coating. Recent work has suggested the repeatability of any method depends on a number of variables, so to better understand how these variables affect the process a series of test vessels were developed and fabricated. Commercially available 3-D printing technology was used to incrementally alter the test vessels allowing for each variable to be investigated individually. With these deposition vessels, NSL can now be used in conjunction with other fabrication steps to integrate features otherwise unattainable through current methods, within the overall fabrication process of larger MEMS devices. Patterned regions in 1800 series photoresist with a thickness of ~700nm are used to capture regions of self-assembled nanospheres. These regions are roughly 2-5 microns in width, and are able to control the placement of 500nm polystyrene spheres by controlling where monolayer self-assembly occurs. The resulting combination of photoresist and nanospheres can then be used with traditional deposition or etch methods to utilize these fine scale features in the overall design.

Application of Ruze Equation for Inflatable Aperture Antennas

Science.gov (United States)

Welch, Bryan W.

2008-01-01

Inflatable aperture reflector antennas are an emerging technology that NASA is investigating for potential uses in science and exploration missions. As inflatable aperture antennas have not been proven fully qualified for space missions, they must be characterized properly so that the behavior of the antennas can be known in advance. To properly characterize the inflatable aperture antenna, testing must be performed in a relevant environment, such as a vacuum chamber. Since the capability of having a radiofrequency (RF) test facility inside a vacuum chamber did not exist at NASA Glenn Research Center, a different methodology had to be utilized. The proposal to test an inflatable aperture antenna in a vacuum chamber entailed performing a photogrammetry study of the antenna surface by using laser ranging measurements. A root-mean-square (rms) error term was derived from the photogrammetry study to calculate the antenna surface loss as described by the Ruze equation. However, initial testing showed that problems existed in using the Ruze equation to calculate the loss due to errors on the antenna surface. This study utilized RF measurements obtained in a near-field antenna range and photogrammetry data taken from a laser range scanner to compare the expected performance of the test antenna (via the Ruze equation) with the actual RF patterns and directivity measurements. Results showed that the Ruze equation overstated the degradation in the directivity calculation. Therefore, when the photogrammetry study is performed on the test antennas in the vacuum chamber, a more complex equation must be used in light of the fact that the Ruze theory overstates the loss in directivity for inflatable aperture reflector antennas.

Dynamic Aperture Studies for SPEAR 3

International Nuclear Information System (INIS)

Corbett, William

1998-01-01

The Stanford Synchrotron Radiation Laboratory is investigating an accelerator upgrade project that would replace the present 130 nm rad FODO lattice with an 18 nm rad double bend achromat (DBA) lattice: SPEAR 3. The low emittance design yields a high brightness beam, but the stronger focusing in the DBA lattice increases chromaticity and beam sensitivity to machine errors. To ensure efficient injection and long Touschek lifetime, an optimization of the design lattice and dynamic aperture has been performed. In this paper, we review the methods used to maximize the SPEAR 3 dynamic aperture including necessary optics modifications, choice of tune and phase advance, optimization of sextupole and coupling correction, and modeling effects of machine errors, wigglers and lattice periodicity

Masks for high aspect ratio x-ray lithography

International Nuclear Information System (INIS)

Malek, C.K.; Jackson, K.H.; Bonivert, W.D.; Hruby, J.

1997-01-01

Fabrication of very high aspect ratio microstructures, as well as ultra-high precision manufacturing is of increasing interest in a multitude of applications. Fields as diverse as micromechanics, robotics, integrated optics, and sensors benefit from this technology. The scale-length of this spatial regime is between what can be achieved using classical machine tool operations and that which is used in microelectronics. This requires new manufacturing techniques, such as the LIGA process, which combines x-ray lithography, electroforming, and plastic molding

Simulation of an aperture-based antihydrogen gravity experiment

Directory of Open Access Journals (Sweden)

C. A. Ordonez

2012-03-01

Full Text Available A Monte Carlo simulation is presented of an experiment that could potentially determine whether antihydrogen accelerates vertically up or down as a result of earth's gravity. The experiment would rely on methods developed by existing antihydrogen research collaborations and would employ a Penning trap for the production of antihydrogen within a uniform magnetic field. The axis of symmetry of the cylindrical trap wall would be oriented horizontally, and an axisymmetric aperture (with an inner radius that is smaller than the cylindrical trap wall radius would be present a short distance away from the antihydrogen production region. Antihydrogen annihilations that occur along the cylindrical trap wall would be detected by the experiment. The distribution of annihilations along the wall would vary near the aperture, because some antihydrogen that would otherwise annihilate at the wall would instead annihilate on the aperture. That is, a shadow region forms behind the aperture, and the distribution of annihilations near the boundary of the shadow region is not azimuthally symmetric when the effect of gravity is significant. The Monte Carlo simulation is used together with analytical modeling to determine conditions under which the annihilation distribution would indicate the direction of the acceleration of antihydrogen due to gravity.

Control of aperture closure during reach-to-grasp movements in Parkinson's disease.

Science.gov (United States)

Rand, M K; Smiley-Oyen, A L; Shimansky, Y P; Bloedel, J R; Stelmach, G E

2006-01-01

This study examined whether the pattern of coordination between arm-reaching toward an object (hand transport) and the initiation of aperture closure for grasping is different between PD patients and healthy individuals, and whether that pattern is affected by the necessity to quickly adjust the reach-to-grasp movement in response to an unexpected shift of target location. Subjects reached for and grasped a vertical dowel, the location of which was indicated by illuminating one of the three dowels placed on a horizontal plane. In control conditions, target location was fixed during the trial. In perturbation conditions, target location was shifted instantaneously by switching the illumination to a different dowel during the reach. The hand distance from the target at which the subject initiated aperture closure (aperture closure distance) was similar for both the control and perturbation conditions within each group of subjects. However, that distance was significantly closer to the target in the PD group than in the control group. The timing of aperture closure initiation varied considerably across the trials in both groups of subjects. In contrast, aperture closure distance was relatively invariant, suggesting that aperture closure initiation was determined by spatial parameters of arm kinematics rather than temporal parameters. The linear regression analysis of aperture closure distance showed that the distance was highly predictable based on the following three parameters: the amplitude of maximum grip aperture, hand velocity, and hand acceleration. This result implies that a control law, the arguments of which include the above parameters, governs the initiation of aperture closure. Further analysis revealed that the control law was very similar between the subject groups under each condition as well as between the control and perturbation conditions for each group. Consequently, the shorter aperture closure distance observed in PD patients apparently is a

Central obscuration effects on optical synthetic aperture imaging

Science.gov (United States)

Wang, Xue-wen; Luo, Xiao; Zheng, Li-gong; Zhang, Xue-jun

2014-02-01

Due to the central obscuration problem exists in most optical synthetic aperture systems, it is necessary to analyze its effects on their image performance. Based on the incoherent diffraction limited imaging theory, a Golay-3 type synthetic aperture system was used to study the central obscuration effects on the point spread function (PSF) and the modulation transfer function (MTF). It was found that the central obscuration does not affect the width of the central peak of the PSF and the cutoff spatial frequency of the MTF, but attenuate the first sidelobe of the PSF and the midfrequency of the MTF. The imaging simulation of a Golay-3 type synthetic aperture system with central obscuration proved this conclusion. At last, a Wiener Filter restoration algorithm was used to restore the image of this system, the images were obviously better.

Synthetic aperture integration (SAI) algorithm for SAR imaging

Science.gov (United States)

Chambers, David H; Mast, Jeffrey E; Paglieroni, David W; Beer, N. Reginald

2013-07-09

A method and system for detecting the presence of subsurface objects within a medium is provided. In some embodiments, the imaging and detection system operates in a multistatic mode to collect radar return signals generated by an array of transceiver antenna pairs that is positioned across the surface and that travels down the surface. The imaging and detection system pre-processes the return signal to suppress certain undesirable effects. The imaging and detection system then generates synthetic aperture radar images from real aperture radar images generated from the pre-processed return signal. The imaging and detection system then post-processes the synthetic aperture radar images to improve detection of subsurface objects. The imaging and detection system identifies peaks in the energy levels of the post-processed image frame, which indicates the presence of a subsurface object.

REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography

Science.gov (United States)

McCord, Mark A.; Petric, Paul; Ummethala, Upendra; Carroll, Allen; Kojima, Shinichi; Grella, Luca; Shriyan, Sameet; Rettner, Charles T.; Bevis, Chris F.

2012-03-01

REBL (Reflective Electron Beam Lithography) is a novel concept for high speed maskless projection electron beam lithography. Originally targeting 45 nm HP (half pitch) under a DARPA funded contract, we are now working on optimizing the optics and architecture for the commercial silicon integrated circuit fabrication market at the equivalent of 16 nm HP. The shift to smaller features requires innovation in most major subsystems of the tool, including optics, stage, and metrology. We also require better simulation and understanding of the exposure process. In order to meet blur requirements for 16 nm lithography, we are both shrinking the pixel size and reducing the beam current. Throughput will be maintained by increasing the number of columns as well as other design optimizations. In consequence, the maximum stage speed required to meet wafer throughput targets at 16 nm will be much less than originally planned for at 45 nm. As a result, we are changing the stage architecture from a rotary design to a linear design that can still meet the throughput requirements but with more conventional technology that entails less technical risk. The linear concept also allows for simplifications in the datapath, primarily from being able to reuse pattern data across dies and columns. Finally, we are now able to demonstrate working dynamic pattern generator (DPG) chips, CMOS chips with microfabricated lenslets on top to prevent crosstalk between pixels.

Large aperture components for solid state laser fusion systems

International Nuclear Information System (INIS)

Simmons, W.W.

1978-01-01

Solid state lasers for fusion experiments must reliably deliver maximum power to small (approximately .5 mm) targets from stand-off focal distances of 1 m or more. This requirement places stringent limits upon the optical quality, resistance to damage, and overall performance of the several major components--amplifiers, Faraday isolators, spatial filters--in each amplifier train. Component development centers about achieving (1) highest functional material figure of merit, (2) best optical quality, and (3) maximum resistance to optical damage. Specific examples of the performance of large aperture components will be presented within the context of the Argus and Shiva laser systems, which are presently operational at Lawrence Livermore Laboratory. Shiva comprises twenty amplifiers, each of 20 cm output clear aperture. Terawatt beams from these amplifiers are focused through two opposed, nested clusters of f/6 lenses onto such targets. Design requirements upon the larger aperture Nova laser components, up to 35 cm in clear aperture, will also be discussed; these pose a significant challenge to the optical industry

Sequential infiltration synthesis for advanced lithography

Energy Technology Data Exchange (ETDEWEB)

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih; Peng, Qing

2017-10-10

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Recent advances in X-ray lithography

International Nuclear Information System (INIS)

Cerrina, F.

1992-01-01

We report some significant developments in the area of X-ray technology, in the area of the modeling of image formation, in distortion control and in mask replication. Early simple models have been replaced by complete optical calculations based on physical optics and including all relevant factors. These models provide good agreement with the available experimental results. In the area of mask distortions, the use of finite element analysis models has clarified the roles played by the various sources of stress and explained in greater detail the origin of temperature changes. These progress have paved the way to the optimization of the exposure system and to the achievement of the large exposure latitude potential of X-ray lithography. (author)

Terahertz near-field imaging using subwavelength plasmonic apertures and a quantum cascade laser source.

Science.gov (United States)

Baragwanath, Adam J; Freeman, Joshua R; Gallant, Andrew J; Zeitler, J Axel; Beere, Harvey E; Ritchie, David A; Chamberlain, J Martyn

2011-07-01

The first demonstration, to our knowledge, of near-field imaging using subwavelength plasmonic apertures with a terahertz quantum cascade laser source is presented. "Bull's-eye" apertures, featuring subwavelength circular apertures flanked by periodic annular corrugations were created using a novel fabrication method. A fivefold increase in intensity was observed for plasmonic apertures over plain apertures of the same diameter. Detailed studies of the transmitted beam profiles were undertaken for apertures with both planarized and corrugated exit facets, with the former producing spatially uniform intensity profiles and subwavelength spatial resolution. Finally, a proof-of-concept imaging experiment is presented, where an inhomogeneous pharmaceutical drug coating is investigated.

Particle-in-Cell Modeling of Magnetized Argon Plasma Flow Through Small Mechanical Apertures

Energy Technology Data Exchange (ETDEWEB)

Adam B. Sefkow and Samuel A. Cohen

2009-04-09

Motivated by observations of supersonic argon-ion flow generated by linear helicon-heated plasma devices, a three-dimensional particle-in-cell (PIC) code is used to study whether stationary electrostatic layers form near mechanical apertures intersecting the flow of magnetized plasma. By self-consistently evaluating the temporal evolution of the plasma in the vicinity of the aperture, the PIC simulations characterize the roles of the imposed aperture and applied magnetic field on ion acceleration. The PIC model includes ionization of a background neutral-argon population by thermal and superthermal electrons, the latter found upstream of the aperture. Near the aperture, a transition from a collisional to a collisionless regime occurs. Perturbations of density and potential, with mm wavelengths and consistent with ion acoustic waves, propagate axially. An ion acceleration region of length ~ 200-300 λD,e forms at the location of the aperture and is found to be an electrostatic double layer, with axially-separated regions of net positive and negative charge. Reducing the aperture diameter or increasing its length increases the double layer strength.

Particle-in-Cell Modeling of Magnetized Argon Plasma Flow Through Small Mechanical Apertures

International Nuclear Information System (INIS)

Sefkow, Adam B.; Cohen, Samuel A.

2009-01-01

Motivated by observations of supersonic argon-ion flow generated by linear helicon-heated plasma devices, a three-dimensional particle-in-cell (PIC) code is used to study whether stationary electrostatic layers form near mechanical apertures intersecting the flow of magnetized plasma. By self-consistently evaluating the temporal evolution of the plasma in the vicinity of the aperture, the PIC simulations characterize the roles of the imposed aperture and applied magnetic field on ion acceleration. The PIC model includes ionization of a background neutral-argon population by thermal and superthermal electrons, the latter found upstream of the aperture. Near the aperture, a transition from a collisional to a collisionless regime occurs. Perturbations of density and potential, with mm wavelengths and consistent with ion acoustic waves, propagate axially. An ion acceleration region of length ∼ 200-300 λ D,e forms at the location of the aperture and is found to be an electrostatic double layer, with axially-separated regions of net positive and negative charge. Reducing the aperture diameter or increasing its length increases the double layer strength

Three dimensional fracture aperture and porosity distribution using computerized tomography

Science.gov (United States)

Wenning, Q.; Madonna, C.; Joss, L.; Pini, R.

2017-12-01

A wide range of geologic processes and geo-engineered applications are governed by coupled hydromechanical properties in the subsurface. In geothermal energy reservoirs, quantifying the rate of heat transfer is directly linked with the transport properties of fractures, underscoring the importance of fracture aperture characterization for achieving optimal heat production. In this context, coupled core-flooding experiments with non-invasive imaging techniques (e.g., X-Ray Computed Tomography - X-Ray CT) provide a powerful method to make observations of these properties under representative geologic conditions. This study focuses on quantifying fracture aperture distribution in a fractured westerly granite core by using a recently developed calibration-free method [Huo et al., 2016]. Porosity is also estimated with the X-ray saturation technique using helium and krypton gases as saturating fluids, chosen for their high transmissibility and high CT contrast [e.g., Vega et al., 2014]. The westerly granite sample (diameter: 5 cm, length: 10 cm) with a single through-going rough-walled fracture was mounted in a high-pressure aluminum core-holder and placed inside a medical CT scanner for imaging. During scanning the pore fluid pressure was undrained and constant, and the confining pressure was regulated to have the desired effective pressure (0.5, 5, 7 and 10 MPa) under loading and unloading conditions. 3D reconstructions of the sample have been prepared in terms of fracture aperture and porosity at a maximum resolution of (0.24×0.24×1) mm3. Fracture aperture maps obtained independently using helium and krypton for the whole core depict a similar heterogeneous aperture field, which is also dependent on confining pressure. Estimates of the average hydraulic aperture from CT scans are in quantitative agreement with results from fluid flow experiments. However, the latter lack of the level of observational detail achieved through imaging, which further evidence the

Multi-Repeated Projection Lithography for High-Precision Linear Scale Based on Average Homogenization Effect

Directory of Open Access Journals (Sweden)

Dongxu Ren

2016-04-01

Full Text Available A multi-repeated photolithography method for manufacturing an incremental linear scale using projection lithography is presented. The method is based on the average homogenization effect that periodically superposes the light intensity of different locations of pitches in the mask to make a consistent energy distribution at a specific wavelength, from which the accuracy of a linear scale can be improved precisely using the average pitch with different step distances. The method’s theoretical error is within 0.01 µm for a periodic mask with a 2-µm sine-wave error. The intensity error models in the focal plane include the rectangular grating error on the mask, static positioning error, and lithography lens focal plane alignment error, which affect pitch uniformity less than in the common linear scale projection lithography splicing process. It was analyzed and confirmed that increasing the repeat exposure number of a single stripe could improve accuracy, as could adjusting the exposure spacing to achieve a set proportion of black and white stripes. According to the experimental results, the effectiveness of the multi-repeated photolithography method is confirmed to easily realize a pitch accuracy of 43 nm in any 10 locations of 1 m, and the whole length accuracy of the linear scale is less than 1 µm/m.

On-axis parallel ion speeds near mechanical and magnetic apertures in a helicon plasma device

International Nuclear Information System (INIS)

Sun Xuan; Cohen, S.A.; Scime, Earl E.; Miah, Mahmood

2005-01-01

Using laser-induced fluorescence, measurements of parallel ion velocities were made along the axis of a helicon-generated Ar plasma column whose radius was modified by spatially separated mechanical and magnetic apertures. Ion acceleration to supersonic speeds was observed 0.1-5 cm downstream of both aperture types, simultaneously generating two steady-state double layers (DLs) when both apertures were in place. The DL downstream of the mechanical aperture plate had a larger potential drop, Δφ DL =6-9 kT e , compared to the DL downstream of the magnetic aperture, Δφ DL ∼3 kT e . In the presheath region upstream of the mechanical aperture, the convective ion speed increased over a collisional distance; from stagnant at 4 cm from the aperture to the 1.4 times the sound speed at the aperture. The dependence of the free- and trapped-ion-velocity-distribution functions on the magnetic-field strength and mechanical-aperture electrical bias are also presented

Deep lithography with protons Modelling and predicting the performances of a novel fabrication technology for micro-optical components

CERN Document Server

Volckaerts, B; Veretennicoff, I; Thienpont, H

2002-01-01

We developed a simulation package that predicts 3D-dose distributions in proton irradiated poly(methylmetacrylate) samples considering primary energy transfer and scattering phenomena. In this paper, we apply this code to predict the surface flatness and maximum thickness of micro-optical and mechanical structures fabricated with deep lithography with protons (DLP). We compare these simulation results with experimental data and highlight the fundamental differences between DLP and deep X-ray lithography.

Integrated lithography to prepare periodic arrays of nano-objects

International Nuclear Information System (INIS)

Sipos, Áron; Szalai, Anikó; Csete, Mária

2013-01-01

We present an integrated lithography method to prepare versatile nano-objects with variable shape and nano-scaled substructure, in wavelength-scaled periodic arrays with arbitrary symmetry. The idea is to illuminate colloid sphere monolayers by polarized beams possessing periodic lateral intensity modulations. Finite element method was applied to determine the effects of the wavelength, polarization and angle of incidence of the incoming beam, and to predict the characteristics of nano-objects, which can be fabricated on thin metal layer covered substrates due to the near-field enhancement under silica colloid spheres. The inter-object distance is controlled by varying the relative orientation of the periodic intensity modulation with respect to the silica colloid sphere monolayer. It is shown that illuminating silica colloid sphere monolayers by two interfering beams, linear patterns made of elliptical holes appear in case of linear polarization, while circularly polarized beams result in co-existent rounded objects, as more circular nano-holes and nano-crescents. The size of the nano-objects and their sub-structure is determined by the spheres diameter and by the wavelength. We present various complex plasmonic patterns made of versatile nano-objects that can be uniquely fabricated applying the inherent symmetry breaking possibilities in the integrated lithography method.

Large area nanoimprint by substrate conformal imprint lithography (SCIL)

Science.gov (United States)

Verschuuren, Marc A.; Megens, Mischa; Ni, Yongfeng; van Sprang, Hans; Polman, Albert

2017-06-01

Releasing the potential of advanced material properties by controlled structuring materials on sub-100-nm length scales for applications such as integrated circuits, nano-photonics, (bio-)sensors, lasers, optical security, etc. requires new technology to fabricate nano-patterns on large areas (from cm2 to 200 mm up to display sizes) in a cost-effective manner. Conventional high-end optical lithography such as stepper/scanners is highly capital intensive and not flexible towards substrate types. Nanoimprint has had the potential for over 20 years to bring a cost-effective, flexible method for large area nano-patterning. Over the last 3-4 years, nanoimprint has made great progress towards volume production. The main accelerator has been the switch from rigid- to wafer-scale soft stamps and tool improvements for step and repeat patterning. In this paper, we discuss substrate conformal imprint lithography (SCIL), which combines nanometer resolution, low patterns distortion, and overlay alignment, traditionally reserved for rigid stamps, with the flexibility and robustness of soft stamps. This was made possible by a combination of a new soft stamp material, an inorganic resist, combined with an innovative imprint method. Finally, a volume production solution will be presented, which can pattern up to 60 wafers per hour.

Fabrication of sub-wavelength photonic structures by nanoimprint lithography

Energy Technology Data Exchange (ETDEWEB)

Kontio, J.

2013-11-01

Nanoimprint lithography (NIL) is a novel but already a mature lithography technique. In this thesis it is applied to the fabrication of nanophotonic devices using its main advantage: the fast production of sub-micron features in high volume in a cost-effective way. In this thesis, fabrication methods for conical metal structures for plasmonic applications and sub-wavelength grating based broad-band mirrors are presented. Conical metal structures, nanocones, with plasmonic properties are interesting because they enable concentrating the energy of light in very tight spots resulting in very high local intensities of electromagnetic energy. The nanocone formation process is studied with several metals. Enhanced second harmonic generation using gold nanocones is presented. Bridged-nanocones are used to enhance Raman scattering from a dye solution. The sub-wavelength grating mirror is an interesting structure for photonics because it is very simple to fabricate and its reflectivity can be extended to the far infrared wavelength range. It also has polarization dependent properties which are used in this thesis to stabilize the output beam of infrared semiconductor disk laser. NIL is shown to be useful a technique in the fabrication of nanophotonic devices in the novel and rapidly growing field of plasmonics and also in more traditional, but still developing, semiconductor laser applications (orig.)

Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2007-01-01

The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

Magnetic anisotropy in a permalloy microgrid fabricated by near-field optical lithography

International Nuclear Information System (INIS)

Li, S. P.; Lebib, A.; Peyrade, D.; Natali, M.; Chen, Y.; Lew, W. S.; Bland, J. A. C.

2001-01-01

We report the fabrication and magnetic properties of permalloy microgrids prepared by near-field optical lithography and characterized using high-sensitivity magneto-optical Kerr effect techniques. A fourfold magnetic anisotropy induced by the grid architecture is identified. [copyright] 2001 American Institute of Physics

Shadow edge lithography for nanoscale patterning and manufacturing

International Nuclear Information System (INIS)

Bai, John G; Chang, C-L; Chung, Jae-Hyun; Lee, Kyong-Hoon

2007-01-01

We demonstrate a wafer-scale nanofabrication method using the shadow effect in physical vapor deposition. An analytical model is presented to predict the formation of nanoscale gaps created by the shadow effect of a prepatterned edge on a deposition plane. The theoretical prediction agrees quantitatively with the widths of the fabricated nanogaps and nanochannels. In the diffusion experiments, both λ-DNA and fluorescein molecules were successfully introduced into the nanochannels. The proposed shadow edge lithography has potential to be a candidate for mass-producing nanostructures

Acoustic Source Localization via Subspace Based Method Using Small Aperture MEMS Arrays

Directory of Open Access Journals (Sweden)

Xin Zhang

2014-01-01

Full Text Available Small aperture microphone arrays provide many advantages for portable devices and hearing aid equipment. In this paper, a subspace based localization method is proposed for acoustic source using small aperture arrays. The effects of array aperture on localization are analyzed by using array response (array manifold. Besides array aperture, the frequency of acoustic source and the variance of signal power are simulated to demonstrate how to optimize localization performance, which is carried out by introducing frequency error with the proposed method. The proposed method for 5 mm array aperture is validated by simulations and experiments with MEMS microphone arrays. Different types of acoustic sources can be localized with the highest precision of 6 degrees even in the presence of wind noise and other noises. Furthermore, the proposed method reduces the computational complexity compared with other methods.

Translation symmetry of the Fraunhofer diffraction pattern from a polygonal aperture

International Nuclear Information System (INIS)

Vinogradov, I.R.; Tarlykov, V.A.

1995-01-01

The problem of observing the translation symmetry in the Fraunhofer diffraction pattern is treated. The objective of this study is to show that translation symmetry can be observed in the Fraunhofer diffraction pattern if the diffraction aperture can be represented in the form of a set of parallelogram apertures. It is shown that the diffraction field produced by such an aperture can be represented as a system of point sources modulated with an amplitude factor. 10 refs., 2 figs

The superconducting x-ray lithography source program at Brookhaven

Energy Technology Data Exchange (ETDEWEB)

Williams, G. P.; Heese, R. N.; Vignola, G.; Murphy, J. B.; Godel, J. B.; Hsieh, H.; Galayda, J.; Seifert, A.; Knotek, M. L.

1989-07-01

A compact electron storage ring with superconducting dipole magnets, is being developed at the National Synchrotron Light Source at Brookhaven. The parameters of the source have been optimized for its future use as an x-ray source for lithography. This first ring is a prototype which will be used to study the operating characteristics of machines of this type with particular attention being paid to low-energy injection and long beam lifetime.

Dynamic aperture studies for SPEAR 3

International Nuclear Information System (INIS)

Nosochkov, Y.; Corbett, J.

1999-01-01

The Stanford Synchrotron Radiation Laboratory is investigating an accelerator upgrade project that would replace the present 130 nm·rad FODO lattice with an 18 nm·rad double bend achromat (DBA) lattice: SPEAR 3. The low emittance design yields a high brightness beam, but the stronger focusing in the DBA lattice increases chromaticity and beam sensitivity to machine errors. To ensure efficient injection and long Touschek lifetime, an optimization of the design lattice and dynamic aperture has been performed. In this paper, we review the methods used to maximize the SPEAR 3 dynamic aperture including necessary optics modifications, choice of tune and phase advance, optimization of sextupole and coupling correction, and modeling effects of machine errors, wigglers and lattice periodicity

Transmission of high-power electron beams through small apertures

International Nuclear Information System (INIS)

Tschalär, C.; Alarcon, R.; Balascuta, S.; Benson, S.V.; Bertozzi, W.; Boyce, J.R.; Cowan, R.; Douglas, D.; Evtushenko, P.; Fisher, P.; Ihloff, E.; Kalantarians, N.; Kelleher, A.; Legg, R.; Milner, R.G.; Neil, G.R.; Ou, L.; Schmookler, B.; Tennant, C.; Williams, G.P.

2013-01-01

Tests were performed to pass a 100 MeV, 430 kWatt c.w. electron beam from the energy-recovery linac at the Jefferson Laboratory's FEL facility through a set of small apertures in a 127 mm long aluminum block. Beam transmission losses of 3 p.p.m. through a 2 mm diameter aperture were maintained during a 7 h continuous run

Fabrication of nanochannels on polyimide films using dynamic plowing lithography

Science.gov (United States)

Stoica, Iuliana; Barzic, Andreea Irina; Hulubei, Camelia

2017-12-01

Three distinct polyimide films were analyzed from the point of view of their morphology in order to determine if their surface features can be adapted for applications where surface anisotropy is mandatory. Channels of nanometric dimensions were created on surface of the specimens by using a less common atomic force microscopy (AFM) method, namely Dynamic Plowing Lithography (DPL). The changes generated by DPL procedure were monitored through the surface texture and other functional parameters, denoting the surface orientation degree and also bearing and fluid retention properties. The results revealed that in the same nanolithography conditions, the diamine and dianhydride moieties have affected the characteristics of the nanochannels. This was explained based on the aliphatic/aromatic nature of the monomers and the backbone flexibility. The reported data are of great importance in designing custom nanostructures with enhanced anisotropy on surface of polyimide films for liquid crystal orientation or guided cell growth purposes. At the end, to track the effect of the nanolithography process on the tip sharpness, degradation and contamination, the blind tip reconstruction was performed on AFM probe, before and after lithography experiments, using TGT1 test grating AFM image.

Business dynamics of lithography at very low k1 factors

Science.gov (United States)

Harrell, Sam; Preil, Moshe E.

1999-07-01

Lithography is the largest capital investment and the largest operating cost component of leading edge semiconductor fabs. In addition, it is the dominant factor in determining the performance of a semiconductor device and is important in determining the yield and thus the economics of a semiconductor circuit. To increase competitiveness and broaden adoption of circuits and the end products in which they are used, there has been and continues to be a dramatic acceleration in the industry roadmap. A critical factor in the acceleration is driving the lithographic images to smaller feature size. There has always been economic tension between the pace of change and the resultant circuit cost. The genius of the semiconductor industry has been in its ability to balance its technology with economic factors and deliver outstanding value to those using the circuits to add value to their end products. The critical question today is whether optical lithography can be successfully and economically extended to maintain and improve the economic benefits of higher complexity circuits. In this paper we will discuss some of these significant tradeoffs required to maintain optically based lithographic progress on the roadmap at acceptable cost.

Direct modification of silicon surface by nanosecond laser interference lithography

Energy Technology Data Exchange (ETDEWEB)

Wang, Dapeng [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Wang, Zuobin, E-mail: wangz@cust.edu.cn [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Zhang, Ziang [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); Yue, Yong [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Li, Dayou [JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom); Maple, Carsten [JR3CN and CNM (Changchun University of Science and Technology), Changchun 130022 (China); JR3CN and IRAC (University of Bedfordshire), Luton LU1 3JU (United Kingdom)

2013-10-01

Periodic and quasi-periodic structures on silicon surface have numerous significant applications in photoelectronics and surface engineering. A number of technologies have been developed to fabricate the structures in various research fields. In this work, we take the strategy of direct nanosecond laser interference lithography technology, and focus on the silicon material to create different well-defined surface structures based on theoretical analysis of the formation of laser interference patterns. Two, three and four-beam laser interference systems were set up to fabricate the grating, regular triangle and square structures on silicon surfaces, respectively. From the AFM micrographs, the critical features of structures have a dependence on laser fluences. For a relative low laser fluence, grating and dot structures formed with bumps due to the Marangoni Effect. With the increase of laser fluences, melt and evaporation behaviors can be responsible for the laser modification. By properly selecting the process parameters, well-defined grating and dot structures can been achieved. It can be demonstrated that direct laser interference lithography is a facile and efficient technology with the advantage of a single process procedure over macroscale areas for the fabrication of micro and nano structures.

Integral characteristics of spectra of ions important for EUV lithography

International Nuclear Information System (INIS)

Karazija, R; Kucas, S; Momkauskaite, A

2006-01-01

The emission spectrum corresponding to the 4p 5 4d N+1 + 4p 6 4d N-1 4f → 4p 6 4d N transition array is concentrated in a narrow interval of wavelengths. That is due to the existence of an approximate selection rule and quenching of some lines by configuration mixing. Thus such emission of elements near Z = 50 is considered to be the main candidate for the EUV lithography source at λ = 13.5 nm. In the present work the regularities of these transition arrays are considered using their integral characteristics: average energy, total line strength, variance and interval of array containing some part of the total transition probability. Calculations for various ions of elements In, Sn, Sb, Te, I and Xe have been performed in a two-configuration pseudorelativistic approximation, which describes fairly well the main features of the spectra. The variation in the values of the main integral characteristics of the spectra with atomic number and ionization degree gives the possibility of comparing quantitatively the suitability of the emission of various ions for EUV lithography

Quench Performance of the First Twin-aperture 11 T Dipole for LHC upgrades

CERN Document Server

Zlobin, A V; Apollinari, G; Barzi, E; Chlachidze, G; Nobrega, A; Novitski, I; Stoynev, S; Turrioni, D; Auchmann, B; Izquierdo Bermudez, S; Karppinen, M; Rossi, L; Savary, F; Smekens, D

2015-01-01

FNAL and CERN are developing a twin-aperture 11 T Nb$_{3}$Sn dipole suitable for installation in the LHC. A single-aperture 2-m long dipole demonstrator and two 1-m long dipole models have been fabricated and tested at FNAL in 2012-2014. The two 1 m long collared coils were then assembled into the first twin-aperture Nb$_{3}$Sn demonstrator dipole and tested. Test results of this twin-aperture Nb$_{3}$Sn dipole model are reported and discussed.

Optimization of Dynamic Aperture of PEP-X Baseline Design

Energy Technology Data Exchange (ETDEWEB)

Wang, Min-Huey; /SLAC; Cai, Yunhai; /SLAC; Nosochkov, Yuri; /SLAC

2010-08-23

SLAC is developing a long-range plan to transfer the evolving scientific programs at SSRL from the SPEAR3 light source to a much higher performing photon source. Storage ring design is one of the possibilities that would be housed in the 2.2-km PEP-II tunnel. The design goal of PEPX storage ring is to approach an optimal light source design with horizontal emittance less than 100 pm and vertical emittance of 8 pm to reach the diffraction limit of 1-{angstrom} x-ray. The low emittance design requires a lattice with strong focusing leading to high natural chromaticity and therefore to strong sextupoles. The latter caused reduction of dynamic aperture. The dynamic aperture requirement for horizontal injection at injection point is about 10 mm. In order to achieve the desired dynamic aperture the transverse non-linearity of PEP-X is studied. The program LEGO is used to simulate the particle motion. The technique of frequency map is used to analyze the nonlinear behavior. The effect of the non-linearity is tried to minimize at the given constrains of limited space. The details and results of dynamic aperture optimization are discussed in this paper.

Optimization of Dynamic Aperture of PEP-X Baseline Design

International Nuclear Information System (INIS)

Wang, Min-Huey

2010-01-01

SLAC is developing a long-range plan to transfer the evolving scientific programs at SSRL from the SPEAR3 light source to a much higher performing photon source. Storage ring design is one of the possibilities that would be housed in the 2.2-km PEP-II tunnel. The design goal of PEPX storage ring is to approach an optimal light source design with horizontal emittance less than 100 pm and vertical emittance of 8 pm to reach the diffraction limit of 1-(angstrom) x-ray. The low emittance design requires a lattice with strong focusing leading to high natural chromaticity and therefore to strong sextupoles. The latter caused reduction of dynamic aperture. The dynamic aperture requirement for horizontal injection at injection point is about 10 mm. In order to achieve the desired dynamic aperture the transverse non-linearity of PEP-X is studied. The program LEGO is used to simulate the particle motion. The technique of frequency map is used to analyze the nonlinear behavior. The effect of the non-linearity is tried to minimize at the given constrains of limited space. The details and results of dynamic aperture optimization are discussed in this paper.

Comparison of PSF maxima and minima of multiple annuli coded aperture (MACA) and complementary multiple annuli coded aperture (CMACA) systems

Science.gov (United States)

Ratnam, Challa; Lakshmana Rao, Vadlamudi; Lachaa Goud, Sivagouni

2006-10-01

In the present paper, and a series of papers to follow, the Fourier analytical properties of multiple annuli coded aperture (MACA) and complementary multiple annuli coded aperture (CMACA) systems are investigated. First, the transmission function for MACA and CMACA is derived using Fourier methods and, based on the Fresnel-Kirchoff diffraction theory, the formulae for the point spread function are formulated. The PSF maxima and minima are calculated for both the MACA and CMACA systems. The dependence of these properties on the number of zones is studied and reported in this paper.

Comparison of PSF maxima and minima of multiple annuli coded aperture (MACA) and complementary multiple annuli coded aperture (CMACA) systems

International Nuclear Information System (INIS)

Ratnam, Challa; Rao, Vadlamudi Lakshmana; Goud, Sivagouni Lachaa

2006-01-01

In the present paper, and a series of papers to follow, the Fourier analytical properties of multiple annuli coded aperture (MACA) and complementary multiple annuli coded aperture (CMACA) systems are investigated. First, the transmission function for MACA and CMACA is derived using Fourier methods and, based on the Fresnel-Kirchoff diffraction theory, the formulae for the point spread function are formulated. The PSF maxima and minima are calculated for both the MACA and CMACA systems. The dependence of these properties on the number of zones is studied and reported in this paper

Design of a hybrid double-sideband/single-sideband (schlieren) objective aperture suitable for electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Buijsse, Bart; Laarhoven, Frank M.H.M. van [FEI Company, PO Box 80066, 5600 KA Eindhoven (Netherlands); Schmid, Andreas K.; Cambie, Rossana; Cabrini, Stefano; Jin, Jian [Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Glaeser, Robert M., E-mail: rmglaeser@lbl.gov [Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States)

2011-12-15

A novel design is described for an aperture that blocks a half-plane of the electron diffraction pattern out to a desired scattering angle, and then - except for a narrow support beam - transmits all of the scattered electrons beyond that angle. Our proposed tulip-shaped design is thus a hybrid between the single-sideband (ssb) aperture, which blocks a full half-plane of the diffraction pattern, and the conventional (i.e. fully open) double-sideband (dsb) aperture. The benefits of this hybrid design include the fact that such an aperture allows one to obtain high-contrast images of weak-phase objects with the objective lens set to Scherzer defocus. We further demonstrate that such apertures can be fabricated from thin-foil materials by milling with a focused ion beam (FIB), and that such apertures are fully compatible with the requirements of imaging out to a resolution of at least 0.34 nm. As is known from earlier work with single-sideband apertures, however, the edge of such an aperture can introduce unwanted, electrostatic phase shifts due to charging. The principal requirement for using such an aperture in a routine data-collection mode is thus to discover appropriate materials, protocols for fabrication and processing and conditions of use such that the hybrid aperture remains free of charging over long periods of time. -- Highlights: Black-Right-Pointing-Pointer New objective-aperture design is proposed for imaging weak-phase objects. Black-Right-Pointing-Pointer Design produces single-sideband contrast at low spatial frequencies. Black-Right-Pointing-Pointer Design also retains Scherzer-defocus phase contrast at higher resolution. Black-Right-Pointing-Pointer Proof-of-concept results are presented for microfabricated apertures. Black-Right-Pointing-Pointer Charging of such apertures during use remains an experimental challenge.

Soft apertures to shape high-power laser beams

International Nuclear Information System (INIS)

Lukishova, S.G.; Pashinin, P.P.; Batygov, S.K.; Terentiev, B.M.

1989-01-01

Soft or apodized apertures with smooth decreasing from center to edges transmission profiles are used in laser physics for beam shaping. This paper gives the results of the studies of four types of these units for UV, visible and IR lasers. They are made of glasses or crystals with the use of one of the following technologies: absorption induced by ionizing radiation; photodestruction of color centers or photooxidation of impurities ions; additive coloration; frustrated total internal reflection. The special feature of such apertures is their high optical damage resistance under the irradiation of single-pulse laser radiation. They are approximately 3-50 mm in diameter by the methods of making them give the possibility to create near-Gaussian and flat-top beams with dimensions less than 1 mm and larger than 200 mm. The results of using them in high-power single-pulse lasers are presented. Damage thresholds of these apertures in such types of lasers have been defined

Optimized baffle and aperture placement in neutral beamlines

International Nuclear Information System (INIS)

Stone, R.; Duffy, T.; Vetrovec, J.

1983-01-01

Most neutral beamlines contain an iron-core ion-bending magnet that requires shielding between the end of the neutralizer and this magnet. This shielding allows the gas pressure to drop prior to the beam entering the magnet and therefore reduces beam losses in this drift region. We have found that the beam losses can be reduced even further by eliminating the iron-core magnet and the magnetic shielding altogether. The required bending field can be supplied by current coils without the iron poles. In addition, placement of the baffles and apertures can affect the cold gas entering the plasma region and the losses in the neutral beam due to re-ionization. In our study we varied the placement of the baffles, which determine the amount of pumping in each chamber, and the apertures, which determine the beam loss. Our results indicate that a baffle/aperture configuration can be set for either minimum cold gas into the plasma region or minimum beam losses, but not both

Illumination system for X-ray lithography

International Nuclear Information System (INIS)

Buckley, W.D.

1989-01-01

An X-ray lithography system is described, comprising: a point source of X-Ray radiation; a wafer plane disposed in spaced relation to the point source of X-Ray radiation; a mask disposed between the point source of X-Ray radiation and the wafer plane whereby X-Ray radiation from the point source of X-ray radiation passes through the mask to the water plane; and X-Ray absorbent means mounted between the point source of X-Ray radiation and the wafer plane, the X-Ray absorbent means being of quadratically absorption from maximum absorption at the center to minimum absorption at the edge so as to have a radial absorption gradient profile to compensate for radial flux variation of the X-Ray radiation

A simple electron-beam lithography system

DEFF Research Database (Denmark)

Mølhave, Kristian; Madsen, Dorte Nørgaard; Bøggild, Peter

2005-01-01

A large number of applications of electron-beam lithography (EBL) systems in nanotechnology have been demonstrated in recent years. In this paper we present a simple and general-purpose EBL system constructed by insertion of an electrostatic deflector plate system at the electron-beam exit...... of the column of a scanning electron microscope (SEM). The system can easily be mounted on most standard SEM systems. The tested setup allows an area of up to about 50 x 50 pm to be scanned, if the upper limit for acceptable reduction of the SEM resolution is set to 10 run. We demonstrate how the EBL system can...... be used to write three-dimensional nanostructures by electron-beam deposition. (C) 2004 Elsevier B.V. All rights reserved....

Review of vacuum systems for x-ray lithography light sources

International Nuclear Information System (INIS)

Schuchman, J.C.

1990-01-01

This paper will review and give a status report on vacuum systems for X-Ray lithography light sources. It will include conventional machines and compact machines (machines using superconducting magnets). The vacuum systems will be described and compared with regard to basic machine parameters, pumping systems, types of pumps, chamber design and material, gauging and diagnostics, and machine performane. 23 refs., 8 figs., 1 tab

Vacuum system design for a superconducting X-ray lithography light source

International Nuclear Information System (INIS)

Schuchman, J.C.

1990-01-01

A superconducting electron storage ring for X-ray lithography (SXLS) is to be built at Brookhaven National Laboratory (BNL). The goal is to design and construct a light source specifically dedicated to X-ray lithography production and which would be used as a prototype in a technology transfer to American industry. The machine will be built in two phases: phase I, a low energy ring (200 MeV, 500 mA) using all room temperature magnets which will be used primarily for low energy injection studies. Phase II will be a full energy machine (690 MeV, 500 mA) where the room temperature 180 0 dipole magnets of phase I will be replaced with superconducting magnets. The machine, with a racetrack shape and a circumference of 8.5 m, is designed to be portable and replaceable as a single unit. This paper will discuss the vacuum system design for both phases; i.e. gas desorption, warm bore vs cold bore, ion trapping, clearing electrodes, and diagnostic instrumentation. (author)

Reduction of nanowire diameter beyond lithography limits by controlled catalyst dewetting

Science.gov (United States)

Calahorra, Yonatan; Kerlich, Alexander; Amram, Dor; Gavrilov, Arkady; Cohen, Shimon; Ritter, Dan

2016-04-01

Catalyst assisted vapour-liquid-solid is the most common method to realize bottom-up nanowire growth; establishing a parallel process for obtaining nanoscale catalysts at pre-defined locations is paramount for further advancement towards commercial nanowire applications. Herein, the effect of a selective area mask on the dewetting of metallic nanowire catalysts, deposited within lithography-defined mask pinholes, is reported. It was found that thin disc-like catalysts, with diameters of 120-450 nm, were transformed through dewetting into hemisphere-like catalysts, having diameters 2-3 fold smaller; the process was optimized to about 95% yield in preventing catalyst splitting, as would otherwise be expected due to their thickness-to-diameter ratio, which was as low as 1/60. The catalysts subsequently facilitated InP and InAs nanowire growth. We suggest that the mask edges prevent surface migration mediated spreading of the dewetted metal, and therefore induce its agglomeration into a single particle. This result presents a general strategy to diminish lithography-set dimensions for NW growth, and may answer a fundamental challenge faced by bottom-up nanowire technology.

Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

Energy Technology Data Exchange (ETDEWEB)

Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Rodt, Sven, E-mail: srodt@physik.tu-berlin.de; Reitzenstein, Stephan [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin (Germany); Strittmatter, André [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin (Germany); Otto-von-Guericke Universität Magdeburg, Universitätsplatz 2, D-39106 Magdeburg (Germany)

2015-07-15

We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

Preparation of Octadecyltrichlorosilane Nanopatterns Using Particle Lithography: An Atomic Force Microscopy Laboratory

Science.gov (United States)

Highland, Zachary L.; Saner, ChaMarra K.; Garno, Jayne C.

2018-01-01

Experiments are described that involve undergraduates learning concepts of nanoscience and chemistry. Students prepare nanopatterns of organosilane films using protocols of particle lithography. A few basic techniques are needed to prepare samples, such as centrifuging, mixing, heating, and drying. Students obtain hands-on skills with nanoscale…

Complementary bowtie aperture for localizing and enhancing optical magnetic field

Science.gov (United States)

Zhou, Nan; Kinzel, Edward C.; Xu, Xianfan

2011-08-01

Nanoscale bowtie antenna and bowtie aperture antenna have been shown to generate strongly enhanced and localized electric fields below the diffraction limit in the optical frequency range. According to Babinet's principle, their complements will be efficient for concentrating and enhancing magnetic fields. In this Letter, we discuss the enhancement of magnetic field intensity of nanoscale complementary bowtie aperture as well as complementary bowtie aperture antenna, or diabolo nanoantenna. We show that the complementary bowtie antenna resonates at a smaller wavelength and thus is more suitable for applications near visible wavelengths. The near-field magnetic intensity can be further enhanced by the addition of groove structures that scatter surface plasmon.

Microfabricated rubber microscope using soft solid immersion lenses

OpenAIRE

Gambin, Yann; Legrand, Olivier; Quake, Stephen R.

2006-01-01

We show here a technique of soft lithography to microfabricate efficient solid immersion lenses (SIL) out of rubber elastomers. The light collection efficiency of a lens system is described by its numerical aperture (NA), and is critical for applications as epifluorescence microscopy [B. Herman, Fluorescence Microscopy (BIOS Scientific, Oxford/Springer, United Kingdom, 1998). While most simple lens systems have numerical apertures less than 1, the lenses described here have NA=1.25. Better pe...

Peak stresses shift from femoral tunnel aperture to tibial tunnel aperture in lateral tibial tunnel ACL reconstructions: a 3D graft-bending angle measurement and finite-element analysis.

Science.gov (United States)

Van Der Bracht, Hans; Tampere, Thomas; Beekman, Pieter; Schepens, Alexander; Devriendt, Wouter; Verdonk, Peter; Victor, Jan

2018-02-01

To investigate the effect of tibial tunnel orientation on graft-bending angle and stress distribution in the ACL graft. Eight cadaveric knees were scanned in extension, 45°, 90°, and full flexion. 3D reconstructions with anatomically placed anterior cruciate ligament (ACL) grafts were constructed with Mimics 14.12 ® . 3D graft-bending angles were measured for classic medial tibial tunnels (MTT) and lateral tibial tunnels (LTT) with different drill-guide angles (DGA) (45°, 55°, 65°, and 75°). A pivot shift was performed on 1 knee in a finite-element analysis. The peak stresses in the graft were calculated for eight different tibial tunnel orientations. In a classic anatomical ACL repair, the largest graft-bending angle and peak stresses are seen at the femoral tunnel aperture. The use of a different DGA at the tibial side does not change the graft-bending angle at the femoral side or magnitude of peak stresses significantly. When using LTT, the largest graft-bending angles and peak stresses are seen at the tibial tunnel aperture. In a classic anatomical ACL repair, peak stresses in the ACL graft are found at the femoral tunnel aperture. When an LTT is used, peak stresses are similar compared to classic ACL repairs, but the location of the peak stress will shift from the femoral tunnel aperture towards the tibial tunnel aperture. the risk of graft rupture is similar for both MTTs and LTTs, but the location of graft rupture changes from the femoral tunnel aperture towards the tibial tunnel aperture, respectively. I.

Metrology measurements for large-aperture VPH gratings

Science.gov (United States)

Zheng, Jessica R.; Gers, Luke; Heijmans, Jeroen

2013-09-01

The High Efficiency and Resolution Multi Element Spectrograph (HERMES) for the Australian Astronomical Observatory (AAO) uses four large aperture, high angle of incidence volume phase holographic gratings (VPHG) for high resolution `Galactic archaeology' spectroscopy. The large clear aperture, the high diffraction efficiency, the line frequency homogeneity, and mosaic alignment made manufacturing and testing challenging. We developed new metrology systems at the AAO to verify the performance of these VPH gratings. The measured diffraction efficiencies and line frequency of the VPH gratings received so far meet the vendor's provided data. The wavefront quality for the Blue VPH grating is good but the Green and Red VPH gratings need to be post polishing.

Report of the workshop on transferring X-ray Lithography Synchrotron (XLS) technology to industry

Energy Technology Data Exchange (ETDEWEB)

Marcuse, W.

1987-01-01

This paper reports on plans to develop an x-ray synchrotron for use in lithography. The primary concern of the present paper is technology transfer from national laboratories to private industry. (JDH)

An examination of the number of required apertures for step-and-shoot IMRT

International Nuclear Information System (INIS)

Jiang, Z; Earl, M A; Zhang, G W; Yu, C X; Shepard, D M

2005-01-01

We have examined the degree to which step-and-shoot IMRT treatment plans can be simplified (using a small number of apertures) without sacrificing the dosimetric quality of the plans. A key element of this study was the use of direct aperture optimization (DAO), an inverse planning technique where all of the multi-leaf collimator constraints are incorporated into the optimization. For seven cases (1 phantom, 1 prostate, 3 head-and-neck and 2 lung), DAO was used to perform a series of optimizations where the number of apertures per beam direction varied from 1 to 15. In this work, we attempt to provide general guidelines for how many apertures per beam direction are sufficient for various clinical cases using DAO. Analysis of the optimized treatment plans reveals that for most cases, only modest improvements in the objective function and the corresponding DVHs are seen beyond 5 apertures per beam direction. However, for more complex cases, some dosimetric gain can be achieved by increasing the number of apertures per beam direction beyond 5. Even in these cases, however, only modest improvements are observed beyond 9 apertures per beam direction. In our clinical experience, 38 out of the first 40 patients treated using IMRT plans produced using DAO were treated with 9 or fewer apertures per beam direction. The results indicate that many step-and-shoot IMRT treatment plans delivered today are more complex than necessary and can be simplified without sacrificing plan quality

Synthetic Aperture Sequential Beamformation applied to medical imaging

DEFF Research Database (Denmark)

Hemmsen, Martin Christian; Hansen, Jens Munk; Jensen, Jørgen Arendt

2012-01-01

Synthetic Aperture Sequential Beamforming (SASB) is applied to medical ultrasound imaging using a multi element convex array transducer. The main motivation for SASB is to apply synthetic aperture techniques without the need for storing RF-data for a number of elements and hereby devise a system...... with a reduced system complexity. Using a 192 element, 3.5 MHz, λ-pitch transducer, it is demonstrated using tissue-phantom and wire-phantom measurements, how the speckle size and the detail resolution is improved compared to conventional imaging....

Control of aperture closure during reach-to-grasp movements in parkinson’s disease

Science.gov (United States)

Rand, M. K.; Smiley-Oyen, A. L.; Shimansky, Y. P.; Bloedel, J. R.; Stelmach, G. E.

2007-01-01

This study examined whether the pattern of coordination between arm-reaching toward an object (hand transport) and the initiation of aperture closure for grasping is different between PD patients and healthy individuals, and whether that pattern is affected by the necessity to quickly adjust the reach-to-grasp movement in response to an unexpected shift of target location. Subjects reached for and grasped a vertical dowel, the location of which was indicated by illuminating one of the three dowels placed on a horizontal plane. In control conditions, target location was fixed during the trial. In perturbation conditions, target location was shifted instantaneously by switching the illumination to a different dowel during the reach. The hand distance from the target at which the subject initiated aperture closure (aperture closure distance) was similar for both the control and perturbation conditions within each group of subjects. However, that distance was significantly closer to the target in the PD group than in the control group. The timing of aperture closure initiation varied considerably across the trials in both groups of subjects. In contrast, aperture closure distance was relatively invariant, suggesting that aperture closure initiation was determined by spatial parameters of arm kinematics rather than temporal parameters. The linear regression analysis of aperture closure distance showed that the distance was highly predictable based on the following three parameters: the amplitude of maximum grip aperture, hand velocity, and hand acceleration. This result implies that a control law, the arguments of which include the above parameters, governs the initiation of aperture closure. Further analysis revealed that the control law was very similar between the subject groups under each condition as well as between the control and perturbation conditions for each group. Consequently, the shorter aperture closure distance observed in PD patients apparently is a

Imaging with Synthetic Aperture Radar

CERN Document Server

Massonnet, Didier

2008-01-01

Describing a field that has been transformed by the recent availability of data from a new generation of space and airborne systems, the authors offer a synthetic geometrical approach to the description of synthetic aperture radar, one that addresses physicists, radar specialists, as well as experts in image processing.  

Multilayer, Stacked Spiral Copper Inductors on Silicon with Micro-Henry Inductance Using Single-Level Lithography

Directory of Open Access Journals (Sweden)

Timothy Reissman

2012-01-01

Full Text Available We present copper structures composed of multilayer, stacked inductors (MLSIs with tens of micro-Henry inductance for use in low frequency (sub 100 MHz, power converter technology. Unique to this work is the introduction of single-level lithography over the traditional two-level approach to create each inductor layer. The result is a simplified fabrication process which results in a reduction in the number of lithography steps per inductor (metal layer and a reduction in the necessary alignment precision. Additionally, we show that this fabrication process yields strong adhesion amongst the layers, since even after a postprocess abrasion technique at the inner diameter of the inductors, no shearing occurs and connectivity is preserved. In total, three separate structures were fabricated using the single-level lithography approach, each with a three-layered, stacked inductor design but with varied geometries. Measured values for each of the structures were extracted, and the following results were obtained: inductance values of 24.74, 17.25, and 24.74 μH, self-resonances of 9.87, 5.72, and 10.58 MHz, and peak quality factors of 2.26, 2.05, and 4.6, respectively. These values are in good agreement with the lumped parameter model presented.

Layout compliance for triple patterning lithography: an iterative approach

Science.gov (United States)

Yu, Bei; Garreton, Gilda; Pan, David Z.

2014-10-01

As the semiconductor process further scales down, the industry encounters many lithography-related issues. In the 14nm logic node and beyond, triple patterning lithography (TPL) is one of the most promising techniques for Metal1 layer and possibly Via0 layer. As one of the most challenging problems in TPL, recently layout decomposition efforts have received more attention from both industry and academia. Ideally the decomposer should point out locations in the layout that are not triple patterning decomposable and therefore manual intervention by designers is required. A traditional decomposition flow would be an iterative process, where each iteration consists of an automatic layout decomposition step and manual layout modification task. However, due to the NP-hardness of triple patterning layout decomposition, automatic full chip level layout decomposition requires long computational time and therefore design closure issues continue to linger around in the traditional flow. Challenged by this issue, we present a novel incremental layout decomposition framework to facilitate accelerated iterative decomposition. In the first iteration, our decomposer not only points out all conflicts, but also provides the suggestions to fix them. After the layout modification, instead of solving the full chip problem from scratch, our decomposer can provide a quick solution for a selected portion of layout. We believe this framework is efficient, in terms of performance and designer friendly.

An integrated lithography concept with application on 45-nm ½ pitch flash memory devices

Science.gov (United States)

Dusa, Mircea; Engelen, Andre; Finders, Jo

2006-03-01

It is well accepted to judge imaging capability of an exposure tool primarily on printing equal line-spaces, at a minimum ½ pitch. Further on, combining line-space minimum ½ pitches with scanner maximum NA, defines the process k I. From a lithographer viewpoint, flash memory device is the perfect candidate to achieve lowest k I lithography for a given NA. This is justified by flash layout specific, with regular and relative simple 1-D topology of the critical layers that look like line-space gratings. In reality, flash layout presents a subtle topology and cannot be considered a simple 1-D line-space problem. Uniqueness to flash layout is the array-end zones, where pattern regularity is broken up by features with dimensions and separation of n x ½ pitch, where n is an integer number that we used in this work to manipulate litho process latitudes. Integrated lithography concept seeks to tweak flash pattern details and tune it with scanner control parameters. We introduce feature-center placement through focus and dose as the metric to characterize a cross-coupling phenomena occurring between adjacent features located at array-end of typical flash poly wordline layer. We comparedthe metric behavior with usual litho process window parameters and identified interactions with scanner CDU control parameters. We show how feature-center placement errors are direct functions of optical and physical characteristics of mask materials, attenuated PSM or binary, and of layout array-end topology. Imaging at extreme low-k I, effects from layout specifics and mask materials are best characterized by full vector, rigorous EM simulation, instead of scalar approach, typically used for OPC treatment. Predicted CDU performance of 1.2NA scanner, based on integrated lithography concept, matched very well the experimental results in printing 45nm ½ pitch flash wordline layer. Results show that 1.2NA scanner, operating at 0.28 k I could be an effective lithography solution for 45nm

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

Science.gov (United States)

Mulkens, Jan; Kubis, Michael; Hinnen, Paul; de Graaf, Roelof; van der Laan, Hans; Padiy, Alexander; Menchtchikov, Boris

2013-04-01

Immersion lithography is being extended to the 20-nm and 14-nm node and the lithography performance requirements need to be tightened further to enable this shrink. In this paper we present an integral method to enable high-order fieldto- field corrections for both imaging and overlay, and we show that this method improves the performance with 20% - 50%. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate application server. Improvements of CD uniformity are based on enabling the use of freeform intra-field dose actuator and field-to-field control of focus. The feedback control loop uses CD and focus targets placed on the production mask. For the overlay metrology we use small in-die diffraction based overlay targets. Improvements of overlay are based on using the high order intra-field correction actuators on a field-tofield basis. We use this to reduce the machine matching error, extending the heating control and extending the correction capability for process induced errors.

Large-aperture plasma-assisted deposition of inertial confinement fusion laser coatings.

Science.gov (United States)

Oliver, James B; Kupinski, Pete; Rigatti, Amy L; Schmid, Ansgar W; Lambropoulos, John C; Papernov, Semyon; Kozlov, Alexei; Spaulding, John; Sadowski, Daniel; Chrzan, Z Roman; Hand, Robert D; Gibson, Desmond R; Brinkley, Ian; Placido, Frank

2011-03-20

Plasma-assisted electron-beam evaporation leads to changes in the crystallinity, density, and stresses of thin films. A dual-source plasma system provides stress control of large-aperture, high-fluence coatings used in vacuum for substrates 1m in aperture.

Deliverable navigation for multicriteria IMRT treatment planning by combining shared and individual apertures

International Nuclear Information System (INIS)

Fredriksson, Albin; Bokrantz, Rasmus

2013-01-01

We consider the problem of deliverable Pareto surface navigation for step-and-shoot intensity-modulated radiation therapy. This problem amounts to calculation of a collection of treatment plans with the property that convex combinations of plans are directly deliverable. Previous methods for deliverable navigation impose restrictions on the number of apertures of the individual plans, or require that all treatment plans have identical apertures. We introduce simultaneous direct step-and-shoot optimization of multiple plans subject to constraints that some of the apertures must be identical across all plans. This method generalizes previous methods for deliverable navigation to allow for treatment plans with some apertures from a collective pool and some apertures that are individual. The method can also be used as a post-processing step to previous methods for deliverable navigation in order to improve upon their plans. By applying the method to subsets of plans in the collection representing the Pareto set, we show how it can enable convergence toward the unrestricted (non-navigable) Pareto set where all apertures are individual. (paper)

Playing with small objects Nano lithography and manipulation A.K. ...

Indian Academy of Sciences (India)

Table of contents. Playing with small objects Nano lithography and manipulation A.K.Raychaudhuri Department of Physics IISc · PowerPoint Presentation · Slide 3 · Slide 4 · Slide 5 · Slide 6 · Atomic Force Microscopy · Slide 8 · Slide 9 · Slide 10 · Slide 11 · Slide 12 · Slide 13 · Slide 14 · Slide 15 · Slide 16 · Slide 17 · Slide 18.

A novel approach to correct the coded aperture misalignment for fast neutron imaging

Energy Technology Data Exchange (ETDEWEB)

Zhang, F. N.; Hu, H. S., E-mail: huasi-hu@mail.xjtu.edu.cn; Wang, D. M.; Jia, J. [School of Energy and Power Engineering, Xi’an Jiaotong University, Xi’an 710049 (China); Zhang, T. K. [Laser Fusion Research Center, CAEP, Mianyang, 621900 Sichuan (China); Jia, Q. G. [Institute of Applied Physics and Computational Mathematics, Beijing 100094 (China)

2015-12-15

Aperture alignment is crucial for the diagnosis of neutron imaging because it has significant impact on the coding imaging and the understanding of the neutron source. In our previous studies on the neutron imaging system with coded aperture for large field of view, “residual watermark,” certain extra information that overlies reconstructed image and has nothing to do with the source is discovered if the peak normalization is employed in genetic algorithms (GA) to reconstruct the source image. Some studies on basic properties of residual watermark indicate that the residual watermark can characterize coded aperture and can thus be used to determine the location of coded aperture relative to the system axis. In this paper, we have further analyzed the essential conditions for the existence of residual watermark and the requirements of the reconstruction algorithm for the emergence of residual watermark. A gamma coded imaging experiment has been performed to verify the existence of residual watermark. Based on the residual watermark, a correction method for the aperture misalignment has been studied. A multiple linear regression model of the position of coded aperture axis, the position of residual watermark center, and the gray barycenter of neutron source with twenty training samples has been set up. Using the regression model and verification samples, we have found the position of the coded aperture axis relative to the system axis with an accuracy of approximately 20 μm. Conclusively, a novel approach has been established to correct the coded aperture misalignment for fast neutron coded imaging.

Effects of surface-mapping corrections and synthetic-aperture focusing techniques on ultrasonic imaging

International Nuclear Information System (INIS)

Barna, B.A.; Johnson, J.A.

1981-01-01

Improvements in ultrasonic imaging that can be obtained using algorithms that map the surface of targets are evaluated. This information is incorporated in the application of synthetic-aperture focusing techniques which also have the potential to improve image resolution. Images obtained using directed-beam (flat) transducers and the focused transducers normally used for synthetic-aperture processing are quantitatively compared by using no processing, synthetic-aperture processing with no corrections for surface variations, and synthetic-aperture processing with surface mapping. The unprocessed images have relatively poor lateral resolutions because echoes from two adjacent reflectors show interference effects which prevent their identification even if the spacing is larger than the single-hole resolution. The synthetic-aperture-processed images show at least a twofold improvement in lateral resolution and greatly reduced interference effects in multiple-hole images compared to directed-beam images. Perhaps more importantly, in images of test blocks with substantial surface variations portions of the image are displaced from their actual positions by several wavelengths. To correct for this effect an algorithm has been developed for calculating the surface variations. The corrected images produced using this algorithm are accurate within the experimental error. In addition, the same algorithm, when applied to the directed-beam data, produced images that are not only accurately positioned, but that also have a resolution comparable to conventional synthetic-aperture-processed images obtained from focused-transducer data. This suggests that using synthetic-aperture processing on the type of data normally collected during directed-beam ultrasonic inspections would eliminate the need to rescan for synthetic-aperture enhancement

Topology optimization for optical projection lithography with manufacturing uncertainties

DEFF Research Database (Denmark)

Zhou, Mingdong; Lazarov, Boyan Stefanov; Sigmund, Ole

2014-01-01

to manufacturing without additional optical proximity correction (OPC). The performance of the optimized device is robust toward the considered process variations. With the proposed unified approach, the design for photolithography is achieved by considering the optimal device performance and manufacturability......This article presents a topology optimization approach for micro-and nano-devices fabricated by optical projection lithography. Incorporating the photolithography process and the manufacturing uncertainties into the topology optimization process results in a binary mask that can be sent directly...

Class of near-perfect coded apertures

International Nuclear Information System (INIS)

Cannon, T.M.; Fenimore, E.E.

1977-01-01

Coded aperture imaging of gamma ray sources has long promised an improvement in the sensitivity of various detector systems. The promise has remained largely unfulfilled, however, for either one of two reasons. First, the encoding/decoding method produces artifacts, which even in the absence of quantum noise, restrict the quality of the reconstructed image. This is true of most correlation-type methods. Second, if the decoding procedure is of the deconvolution variety, small terms in the transfer function of the aperture can lead to excessive noise in the reconstructed image. It is proposed to circumvent both of these problems by use of a uniformly redundant array (URA) as the coded aperture in conjunction with a special correlation decoding method. It is shown that the reconstructed image in the URA system contains virtually uniform noise regardless of the structure in the original source. Therefore, the improvement over a single pinhole camera will be relatively larger for the brighter points in the source than for the low intensity points. In the case of a large detector background noise the URA will always do much better than the single pinhole regardless of the structure of the object. In the case of a low detector background noise, the improvement of the URA over the single pinhole will have a lower limit of approximately (1/2f)/sup 1 / 2 / where f is the fraction of the field of view which is uniformly filled by the object

40 keV Shaped electron beam lithography for LIGA intermediate mask fabrication

NARCIS (Netherlands)

Luttge, R.; Adam, D.; Burkhardt, F.; Hoke, F.; Schacke, H.; Schmidt, M.; Wolf, H.; Schmidt, A.

1999-01-01

High precision LIGA masks require a soft X-ray pattern transfer from intermediate masks by means of electron beam lithography. Such a process has been realized using an upgraded Leica ZBA 23 machine with an acceleration voltage of 40 kV. Three process variations of the developer system, so called GG

Forensic Facial Reconstruction: Relationship Between the Alar Cartilage and Piriform Aperture.

Science.gov (United States)

Strapasson, Raíssa Ananda Paim; Herrera, Lara Maria; Melani, Rodolfo Francisco Haltenhoff

2017-11-01

During forensic facial reconstruction, facial features may be predicted based on the parameters of the skull. This study evaluated the relationships between alar cartilage and piriform aperture and nose morphology and facial typology. Ninety-six cone beam computed tomography images of Brazilian subjects (49 males and 47 females) were used in this study. OsiriX software was used to perform the following measurements: nasal width, distance between alar base insertion points, lower width of the piriform aperture, and upper width of the piriform aperture. Nasal width was associated with the lower width of the piriform aperture, sex, skeletal vertical pattern of the face, and age. The current study contributes to the improvement of forensic facial guides by identifying the relationships between the alar cartilages and characteristics of the biological profile of members of a population that has been little studied thus far. © 2017 American Academy of Forensic Sciences.

Design of a neutron penumbral-aperture microscope with 10-μm resolution

International Nuclear Information System (INIS)

Ress, D.; Lerche, R.A.; Ellis, R.J.; Lane, S.M.

1990-05-01

We are currently designing a 10-μm resolution neutron penumbral-aperture microscope to diagnose high-convergence targets at the Nova laser facility. To achieve such high resolution, the new microscope will require substantial improvements in three areas. First, we have designed thick penumbral apertures with extremely sharp cutoffs over a useful (∼100 μm) field of view; fabrication of such apertures appears feasible using gold electroplating techniques. Second, the limited field of view and required close proximity of the aperture to the target (2 cm) necessitates a durable mounting and alignment system with +25 μm accuracy. Finally, a neutron detector containing 160,000 scintillator elements is required; readout and optimization of this large array are outstanding issues. 5 refs., 3 figs

Method and apparatus for shadow aperture backscatter radiography (SABR) system and protocol

Science.gov (United States)

Shedlock, Daniel (Inventor); Jacobs, Alan M. (Inventor); Jacobs, Sharon Auerback (Inventor); Dugan, Edward (Inventor)

2010-01-01

A shadow aperture backscatter radiography (SABR) system includes at least one penetrating radiation source for providing a penetrating radiation field, and at least one partially transmissive radiation detector, wherein the partially transmissive radiation detector is interposed between an object region to be interrogated and the radiation source. The partially transmissive radiation detector transmits a portion of the illumination radiation field. A shadow aperture having a plurality of radiation attenuating regions having apertures therebetween is disposed between the radiation source and the detector. The apertures provide illumination regions for the illumination radiation field to reach the object region, wherein backscattered radiation from the object is detected and generates an image by the detector in regions of the detector that are shadowed by the radiation attenuation regions.

Lithography-induced limits to scaling of design quality

Science.gov (United States)

Kahng, Andrew B.

2014-03-01

Quality and value of an IC product are functions of power, performance, area, cost and reliability. The forthcoming 2013 ITRS roadmap observes that while manufacturers continue to enable potential Moore's Law scaling of layout densities, the "realizable" scaling in competitive products has for some years been significantly less. In this paper, we consider aspects of the question, "To what extent should this scaling gap be blamed on lithography?" Non-ideal scaling of layout densities has been attributed to (i) layout restrictions associated with multi-patterning technologies (SADP, LELE, LELELE), as well as (ii) various ground rule and layout style choices that stem from misalignment, reliability, variability, device architecture, and electrical performance vs. power constraints. Certain impacts seem obvious, e.g., loss of 2D flexibility and new line-end placement constraints with SADP, or algorithmically intractable layout stitching and mask coloring formulations with LELELE. However, these impacts may well be outweighed by weaknesses in design methodology and tooling. Arguably, the industry has entered a new era in which many new factors - (i) standard-cell library architecture, and layout guardbanding for automated place-and-route: (ii) performance model guardbanding and signoff analyses: (iii) physical design and manufacturing handoff algorithms spanning detailed placement and routing, stitching and RET; and (iv) reliability guardbanding - all contribute, hand in hand with lithography, to a newly-identified "design capability gap". How specific aspects of process and design enablements limit the scaling of design quality is a fundamental question whose answer must guide future RandD investment at the design-manufacturing interface. terface.

UV curing imprint lithography for micro-structure in MEMS manufacturing

International Nuclear Information System (INIS)

Ding Yucheng; Liu Hongzhong; Lu Bingheng; Qiu Zhihui

2006-01-01

Imprint lithography has been gaining popularity as a new method to fabricate microelectro mechanical systems. The main advantages of the IL are its extremely low set-up cost, high replicating accuracy and extended fabricating critical dimension. Compare to traditional optical lithography, IL has the advantages of being able to fabricate complex pattern structure with high-aspect ratio. However, the thermal and loading errors can reduce pattern transferring fidelity. In this paper, UV curing method is used in IL process which can avoid the heat distortion of tools. Additionally, a six-step loading process for template pressing into resist film is developed. The performance of this process include: the loading locus is continuous with very high accuracy (10nm), the press releasing control (accuracy up to 1 psi) can reduce and avoid the distortion of template structure and stage supports. This process can achieve a residual layer with thickness of 20nm and avoid the elastic stamp distorted (under 20nm) at the same time. The press force can reach up to 300 psi for 6 cm 2 pattern size but the friction force during demould process can be reduced to 30 psi. Experimental results reveal that it is a novel and robust process with high fidelity in micro/nano structures manufacturing

High-dynamic range compressive spectral imaging by grayscale coded aperture adaptive filtering

Directory of Open Access Journals (Sweden)

Nelson Eduardo Diaz

2015-09-01

Full Text Available The coded aperture snapshot spectral imaging system (CASSI is an imaging architecture which senses the three dimensional informa-tion of a scene with two dimensional (2D focal plane array (FPA coded projection measurements. A reconstruction algorithm takes advantage of the compressive measurements sparsity to recover the underlying 3D data cube. Traditionally, CASSI uses block-un-block coded apertures (BCA to spatially modulate the light. In CASSI the quality of the reconstructed images depends on the design of these coded apertures and the FPA dynamic range. This work presents a new CASSI architecture based on grayscaled coded apertu-res (GCA which reduce the FPA saturation and increase the dynamic range of the reconstructed images. The set of GCA is calculated in a real-time adaptive manner exploiting the information from the FPA compressive measurements. Extensive simulations show the attained improvement in the quality of the reconstructed images when GCA are employed.  In addition, a comparison between traditional coded apertures and GCA is realized with respect to noise tolerance.

A method to select aperture margin in collimated spot scanning proton therapy

International Nuclear Information System (INIS)

Wang, Dongxu; Smith, Blake R; Gelover, Edgar; Flynn, Ryan T; Hyer, Daniel E

2015-01-01

The use of collimator or aperture may sharpen the lateral dose gradient for spot scanning proton therapy. However, to date, there has not been a standard method to determine the aperture margin for a single field in collimated spot scanning proton therapy. This study describes a theoretical framework to select the optimal aperture margin for a single field, and also presents the spot spacing limit required such that the optimal aperture margin exists. Since, for a proton pencil beam partially intercepted by collimator, the maximum point dose (spot center) shifts away from the original pencil beam central axis, we propose that the optimal margin should be equal to the maximum pencil beam center shift under the condition that spot spacing is small with respect to the maximum pencil beam center shift, which can be numerically determined based on beam modeling data. A test case is presented which demonstrates agreement with the prediction made based on the proposed methods. When apertures are applied in a commercial treatment planning system this method may be implemented. (note)

Photonic integrated circuits: new challenges for lithography

Science.gov (United States)

Bolten, Jens; Wahlbrink, Thorsten; Prinzen, Andreas; Porschatis, Caroline; Lerch, Holger; Giesecke, Anna Lena

2016-10-01

In this work routes towards the fabrication of photonic integrated circuits (PICs) and the challenges their fabrication poses on lithography, such as large differences in feature dimension of adjacent device features, non-Manhattan-type features, high aspect ratios and significant topographic steps as well as tight lithographic requirements with respect to critical dimension control, line edge roughness and other key figures of merit not only for very small but also for relatively large features, are highlighted. Several ways those challenges are faced in today's low-volume fabrication of PICs, including the concept multi project wafer runs and mix and match approaches, are presented and possible paths towards a real market uptake of PICs are discussed.

Digital filtering and reconstruction of coded aperture images

International Nuclear Information System (INIS)

Tobin, K.W. Jr.

1987-01-01

The real-time neutron radiography facility at the University of Virginia has been used for both transmission radiography and computed tomography. Recently, a coded aperture system has been developed to permit the extraction of three dimensional information from a low intensity field of radiation scattered by an extended object. Short wave-length radiations (e.g. neutrons) are not easily image because of the difficulties in achieving diffraction and refraction with a conventional lens imaging system. By using a coded aperture approach, an imaging system has been developed that records and reconstructs an object from an intensity distribution. This system has a signal-to-noise ratio that is proportional to the total open area of the aperture making it ideal for imaging with a limiting intensity radiation field. The main goal of this research was to develope and implement the digital methods and theory necessary for the reconstruction process. Several real-time video systems, attached to an Intellect-100 image processor, a DEC PDP-11 micro-computer, and a Convex-1 parallel processing mainframe were employed. This system, coupled with theoretical extensions and improvements, allowed for retrieval of information previously unobtainable by earlier optical methods. The effect of thermal noise, shot noise, and aperture related artifacts were examined so that new digital filtering techniques could be constructed and implemented. Results of image data filtering prior to and following the reconstruction process are reported. Improvements related to the different signal processing methods are emphasized. The application and advantages of this imaging technique to the field of non-destructive testing are also discussed

Strategies used to walk through a moving aperture.

Science.gov (United States)

Cinelli, Michael E; Patla, Aftab E; Allard, Fran

2008-05-01

The objectives of the study were to determine what strategy (pursuit or interception) individuals used to pass through an oscillating target and to determine if individuals walked towards where they were looking. Kinematic and gaze behaviour data was collected from seven healthy female participants as they started at one of five different starting positions and walked 7 m towards an oscillating target. The target was a two-dimensional 70 cm aperture made by two-76 cm wide doors and oscillated between two end posts that were 300 cm apart. In order to quantify the objectives, target-heading angles [Fajen BR, Warren WH. Behavioral dynamics of steering, obstacle avoidance, and route selection. J Exp Psychol Hum Percept Perform 2003;29(2):343-62; Fajen BR, Warren WH. Visual guidance of intercepting a moving target on foot. Perception 2004;33:689-715] were calculated. Results showed that the participants used neither an interception nor a pursuit strategy to successfully pass through the moving aperture. The participants steered towards the middle of the pathway prior to passing through the middle of the aperture. A cross correlation between the horizontal gaze locations and the medial/lateral (M/L) location of the participants' center of mass (COM) was performed. The results from the cross correlation show that during the final 2s prior to crossing the aperture, the participants walked where they were looking. The findings from this study suggest that individuals simplify a task by decreasing the perceptual load until the final stages. In this way the final stages of this task were visually driven.

Scaling Laws for Dynamic Aperture due to Chromatic Sextupoles

CERN Document Server

Scandale, Walter

1997-01-01

Scaling laws for the dynamic aperture due to chromatic sextupoles are investigated. The problem is addressed in a simplified lattice model containing 4 N identical cells and one linear betatron phase shifter to break the overall cell-lattice symmetry. Two families of chromatic sextupoles are used to compensate the natural chromaticity. Analytical formulae for the dynamic apertur as a function of the number of cells and of the cell length are found and confirmed through computer tracking.

Phase Centers of Subapertures in a Tapered Aperture Array.

Energy Technology Data Exchange (ETDEWEB)

Doerry, Armin W. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Bickel, Douglas L. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

2015-11-01

Antenna apertures that are tapered for sidelobe control can also be parsed into subapertures for Direction of Arrival (DOA) measurements. However, the aperture tapering complicates phase center location for the subapertures, knowledge of which is critical for proper DOA calculation. In addition, tapering affects subaperture gains, making gain dependent on subaperture position. Techniques are presented to calculate subaperture phase center locations, and algorithms are given for equalizing subapertures’ gains. Sidelobe characteristics and mitigation are also discussed.

MEGARA Optics: Sub-aperture Stitching Interferometry for Large Surfaces

Science.gov (United States)

Aguirre-Aguirre, Daniel; Carrasco, Esperanza; Izazaga-Pérez, Rafael; Páez, Gonzalo; Granados-Agustín, Fermín; Percino-Zacarías, Elizabeth; Gil de Paz, Armando; Gallego, Jesús; Iglesias-Páramo, Jorge; Villalobos-Mendoza, Brenda

2018-04-01

In this work, we present a detailed analysis of sub-aperture interferogram stitching software to test circular and elliptical clear apertures with diameters and long axes up to 272 and 180 mm, respectively, from the Multi-Espectrógrafo en GTC de Alta Resolución para Astronomía (MEGARA). MEGARA is a new spectrograph for the Gran Telescopio Canarias (GTC). It offers a resolution between 6000 and 20000 via the use of volume phase holographic gratings. It has an integral field unit and a set of robots for multi-object spectroscopy at the telescope focal plane. The output end of the fibers forms the spectrograph pseudo-slit. The fixed geometry of the collimator and camera configuration requires prisms in addition to the flat windows of the volume phase holographic gratings. There are 73 optical elements of large aperture and high precision manufactured in Mexico at the Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE) and the Centro de Investigaciones en Óptica (CIO). The principle of stitching interferometry is to divide the surface being tested into overlapping small sections, which allows an easier analysis (Kim & Wyant 1981). This capability is ideal for non-contact tests for unique and large optics as required by astronomical instruments. We show that the results obtained with our sub-aperture stitching algorithm were consistent with other methods that analyze the entire aperture. We used this method to analyze the 24 MEGARA prisms that could not be tested otherwise. The instrument has been successfully commissioned at GTC in all the spectral configurations. The fulfillment of the irregularity specifications was one of the necessary conditions to comply with the spectral requirements.

Development of GaN-based nanosensors using surface charge lithography

International Nuclear Information System (INIS)

Popa, Veaceslav; Braniste, Tudor; Volciuc, Olesea; Pavlidis, Dimitris; Sarua, Andrei; Kuball, Martin; Heard, Peter

2011-01-01

Semiconductor nanotechnology is a fast developing branch of modern engineering that offers perspectives for the development of electronic devices with superior parameters. A special and important niche in nanotechnology is allocated to the fabrication of nanosensors which are expected to exhibit higher sensitivity in comparison with classical microelectronic sensors. Various aspects of fabrication of GaN based nanosensors using Surface Charge Lithography are discussed and preliminary tests for gas sensors applications are presented.

Apparatus and method for deterministic control of surface figure during full aperture polishing

Science.gov (United States)

Suratwala, Tayyab Ishaq; Feit, Michael Dennis; Steele, William Augustus

2013-11-19

A polishing system configured to polish a lap includes a lap configured to contact a workpiece for polishing the workpiece; and a septum configured to contact the lap. The septum has an aperture formed therein. The radius of the aperture and radius the workpiece are substantially the same. The aperture and the workpiece have centers disposed at substantially the same radial distance from a center of the lap. The aperture is disposed along a first radial direction from the center of the lap, and the workpiece is disposed along a second radial direction from the center of the lap. The first and second radial directions may be opposite directions.

Molecular Switch for Sub-Diffraction Laser Lithography by Photoenol Intermediate-State Cis-Trans Isomerization.

Science.gov (United States)

Mueller, Patrick; Zieger, Markus M; Richter, Benjamin; Quick, Alexander S; Fischer, Joachim; Mueller, Jonathan B; Zhou, Lu; Nienhaus, Gerd Ulrich; Bastmeyer, Martin; Barner-Kowollik, Christopher; Wegener, Martin

2017-06-27

Recent developments in stimulated-emission depletion (STED) microscopy have led to a step change in the achievable resolution and allowed breaking the diffraction limit by large factors. The core principle is based on a reversible molecular switch, allowing for light-triggered activation and deactivation in combination with a laser focus that incorporates a point or line of zero intensity. In the past years, the concept has been transferred from microscopy to maskless laser lithography, namely direct laser writing (DLW), in order to overcome the diffraction limit for optical lithography. Herein, we propose and experimentally introduce a system that realizes such a molecular switch for lithography. Specifically, the population of intermediate-state photoenol isomers of α-methyl benzaldehydes generated by two-photon absorption at 700 nm fundamental wavelength can be reversibly depleted by simultaneous irradiation at 440 nm, suppressing the subsequent Diels-Alder cycloaddition reaction which constitutes the chemical core of the writing process. We demonstrate the potential of the proposed mechanism for STED-inspired DLW by covalently functionalizing the surface of glass substrates via the photoenol-driven STED-inspired process exploiting reversible photoenol activation with a polymerization initiator. Subsequently, macromolecules are grown from the functionalized areas and the spatially coded glass slides are characterized by atomic-force microscopy. Our approach allows lines with a full-width-at-half-maximum of down to 60 nm and line gratings with a lateral resolution of 100 nm to be written, both surpassing the diffraction limit.

Reduction of nanowire diameter beyond lithography limits by controlled catalyst dewetting

International Nuclear Information System (INIS)

Calahorra, Yonatan; Kerlich, Alexander; Gavrilov, Arkady; Cohen, Shimon; Ritter, Dan; Amram, Dor

2016-01-01

Catalyst assisted vapour-liquid–solid is the most common method to realize bottom-up nanowire growth; establishing a parallel process for obtaining nanoscale catalysts at pre-defined locations is paramount for further advancement towards commercial nanowire applications. Herein, the effect of a selective area mask on the dewetting of metallic nanowire catalysts, deposited within lithography-defined mask pinholes, is reported. It was found that thin disc-like catalysts, with diameters of 120–450 nm, were transformed through dewetting into hemisphere-like catalysts, having diameters 2–3 fold smaller; the process was optimized to about 95% yield in preventing catalyst splitting, as would otherwise be expected due to their thickness-to-diameter ratio, which was as low as 1/60. The catalysts subsequently facilitated InP and InAs nanowire growth. We suggest that the mask edges prevent surface migration mediated spreading of the dewetted metal, and therefore induce its agglomeration into a single particle. This result presents a general strategy to diminish lithography-set dimensions for NW growth, and may answer a fundamental challenge faced by bottom-up nanowire technology. (paper)

Experimental demonstration of line-width modulation in plasmonic lithography using a solid immersion lens-based active nano-gap control

International Nuclear Information System (INIS)

Lee, Won-Sup; Kim, Taeseob; Choi, Guk-Jong; Lim, Geon; Joe, Hang-Eun; Gang, Myeong-Gu; Min, Byung-Kwon; Park, No-Cheol; Moon, Hyungbae; Kim, Do-Hyung; Park, Young-Pil

2015-01-01

Plasmonic lithography has been used in nanofabrication because of its utility beyond the diffraction limit. The resolution of plasmonic lithography depends on the nano-gap between the nanoaperture and the photoresist surface—changing the gap distance can modulate the line-width of the pattern. In this letter, we demonstrate solid-immersion lens based active non-contact plasmonic lithography, applying a range of gap conditions to modulate the line-width of the pattern. Using a solid-immersion lens-based near-field control system, the nano-gap between the exit surface of the nanoaperture and the media can be actively modulated and maintained to within a few nanometers. The line-widths of the recorded patterns using 15- and 5-nm gaps were 47 and 19.5 nm, respectively, which matched closely the calculated full-width at half-maximum. From these results, we conclude that changing the nano-gap within a solid-immersion lens-based plasmonic head results in varying line-width patterns

Latex particle template lift-up guided gold wire-networks via evaporation lithography

KAUST Repository

Lone, Saifullah; Vakarelski, Ivan Uriev; Chew, Basil; Wang, Zhihong; Thoroddsen, Sigurdur T

2014-01-01

We describe a hybrid methodology that combines a two dimensional (2D) monolayer of latex particles (with a pitch size down to 1 μm) prepared by horizontal dry deposition, lift-up of a 2D template onto flat surfaces and evaporation lithography to fabricate metal micro- and nano wire-networks. This journal is

Fabrication and Characterization of Three Dimensional Photonic Crystals Generated by Multibeam Interference Lithography

Science.gov (United States)

Chen, Ying-Chieh

2009-01-01

Multibeam interference lithography is investigated as a manufacturing technique for three-dimensional photonic crystal templates. In this research, optimization of the optical setup and the photoresist initiation system leads to a significant improvement of the optical quality of the crystal, as characterized by normal incidence optical…

Scalable fabrication of nanostructured devices on flexible substrates using additive driven self-assembly and nanoimprint lithography

Science.gov (United States)

Watkins, James

2013-03-01

Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters.

Design considerations of 10 kW-scale, extreme ultraviolet SASE FEL for lithography

CERN Document Server

Pagani, C; Schneidmiller, E A; Yurkov, M V

2001-01-01

The semiconductor industry growth is driven to a large extent by steady advancements in microlithography. According to the newly updated industry road map, the 70 nm generation is anticipated to be available in the year 2008. However, the path to get there is not clear. The problem of construction of extreme ultraviolet (EUV) quantum lasers for lithography is still unsolved: progress in this field is rather moderate and we cannot expect a significant breakthrough in the near future. Nevertheless, there is clear path for optical lithography to take us to sub-100 nm dimensions. Theoretical and experimental work in Self-Amplified Spontaneous Emission (SASE) Free Electron Lasers (FEL) physics and the physics of superconducting linear accelerators over the last 10 years has pointed to the possibility of the generation of high-power optical beams with laser-like characteristics in the EUV spectral range. Recently, there have been important advances in demonstrating a high-gain SASE FEL at 100 nm wavelength (J. Andr...

Advanced light source technologies that enable high-volume manufacturing of DUV lithography extensions

Science.gov (United States)

Cacouris, Theodore; Rao, Rajasekhar; Rokitski, Rostislav; Jiang, Rui; Melchior, John; Burfeindt, Bernd; O'Brien, Kevin

2012-03-01

Deep UV (DUV) lithography is being applied to pattern increasingly finer geometries, leading to solutions like double- and multiple-patterning. Such process complexities lead to higher costs due to the increasing number of steps required to produce the desired results. One of the consequences is that the lithography equipment needs to provide higher operating efficiencies to minimize the cost increases, especially for producers of memory devices that experience a rapid decline in sales prices of these products over time. In addition to having introduced higher power 193nm light sources to enable higher throughput, we previously described technologies that also enable: higher tool availability via advanced discharge chamber gas management algorithms; improved process monitoring via enhanced on-board beam metrology; and increased depth of focus (DOF) via light source bandwidth modulation. In this paper we will report on the field performance of these technologies with data that supports the desired improvements in on-wafer performance and operational efficiencies.

The fabrication of highly ordered silver nanodot patterns by platinum assisted nanoimprint lithography

International Nuclear Information System (INIS)

Yoo, Hae-Wook; Jung, Jin-Mi; Lee, Su-kyung; Jung, Hee-Tae

2011-01-01

Silver has been widely used for optical sensing and imaging applications which benefit from localized surface plasmon resonance (LSPR) in a nanoscale configuration. Many attempts have been made to fabricate and control silver nanostructures in order to improve the high performance in sensing and other applications. However, a fatal mechanical weakness of silver and a lack of durability in oxygen-rich conditions have disrupted the manufacturing of reproducible nanostructures by the top-down lithography approach. In this study, we suggest a steady fabrication strategy to obtain highly ordered silver nanopatterns that are able to provide tunable LSPR characteristics. By using a protecting layer of platinum on a silver surface in the lithography process, we successfully obtained large-area (2.7 x 2.7 mm 2 ) silver nanopatterns with high reproducibility. This large-area silver nanopattern was capable of enhancing the low concentration of a Cy3 fluorescence signal (∼10 -10 M) which was labeled with DNA oligomers.

Investigation of novel fractal shape of the nano-aperture as a metasurface for bio sensing application

Energy Technology Data Exchange (ETDEWEB)

Heydari, Samaneh [Sama Technical and Vocational Training College, Islamic Azad University, Isfahan Branch, Khorasgan (Iran, Islamic Republic of); Rastan, Iman; Parvin, Amin [Faculty of Eng., Science and Research Branch, Islamic Azad University, Shiraz (Iran, Islamic Republic of); Pirooj, Azadeh [Faculty of Eng., Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zarrabi, Ferdows B., E-mail: ferdows.zarrabi@yahoo.com [Young Researchers and Elite Club, Babol Branch, Islamic Azad University, Babol (Iran, Islamic Republic of)

2017-01-23

Recently, nano-aperture is noticed due to its good transmission in the optical regime. Also, the nano-apertures are developed at the metasurface design for circular polarization; for this aim, various shapes of the nano-aperture are suggested. To reach this objective, we have developed a novel Jerusalem cross fractal shape for a mid-infrared application. We have simulated various formations of the nano-fractal Jerusalem cross based on a simple cross to show the effect of nano-aperture shape on electrical field enhancement in the near-field which is important in spectroscopy and optical imaging. In addition, we have used a single layer graphene over the aperture as a coat for making reconfigurable characteristic also creating a membrane for placement of nano-particle over the aperture. Implementation of the graphene is an amendment to the transfer of the nano-apertures. The biological materials with a thickness of 80 nm have been placed over the graphene layer and the Figures of Merits (FOM) have been obtained. Additionally, the prototype of nano-antenna is independent from incident wave polarization. The Finite Difference Time Domain (FDTD) calculations have been implemented in the simulation and modeling the nano-apertures. - Highlights: • Nano-apertures are developed at the metasurface design for circular polarization. • We have developed a novel Jerusalem cross fractal shape for a mid-infrared application. • Effect of nano-aperture shape on near-field enhancement is noticed which is important in spectroscopy and optical imaging. • Single layer graphene over the aperture as a coat for making reconfigurable characteristic.

X-ray lithography for micro and nanotechnology at RRCAT

International Nuclear Information System (INIS)

Shukla, Rahul; Dhamgaye, V.P.; Jain, V.K.; Lodha, G.S.

2013-01-01

At Indus-2 Soft and Deep X-ray Lithography beamline (BL-07) is functional and is capable of developing various high aspect ratio and high resolution structures at micro and nano scale. These micro and nano structures can be made to work as a mechanism, sensor, actuator and transducer for varieties of applications and serve as basic building blocks for the development of X-ray and IR optics, LASERs, lab-on-a-chip, micromanipulators and nanotechnology. To achieve these goals we have started developing high aspect ratio comb-drives, electrostatic micromotors, micro fluidic channels, X-ray optics and novel transducers for RF applications by Deep X-ray Lithography (DXRL). Comb-drive is one of most studied electrostatic device in MEMS (Micro Electro-Mechanical Systems). It can be used as a sensor, actuator, resonator, energy harvester and filter. Analysis and simulation shows that the comb actuator of aspect ratio 16 (air gap 50 μm) will produce nearly 1.25 μm displacement when DC voltage of 100 V is applied. For fabrication, first time in India, Polyimide X-ray mask is realized and exposure and development is done at BL-7 at RRCAT. The displacement increases as gap between comb finger decreases. Further refinement is in progress to get higher output from high aspect ratio (∼ 80) comb actuators (i.e. 1 μm at 5V). The other important design parameters like resonance frequency, capacitance will also be discussed. (author)

Dr.LiTHO: a development and research lithography simulator

Science.gov (United States)

Fühner, Tim; Schnattinger, Thomas; Ardelean, Gheorghe; Erdmann, Andreas

2007-03-01

This paper introduces Dr.LiTHO, a research and development oriented lithography simulation environment developed at Fraunhofer IISB to flexibly integrate our simulation models into one coherent platform. We propose a light-weight approach to a lithography simulation environment: The use of a scripting (batch) language as an integration platform. Out of the great variety of different scripting languages, Python proved superior in many ways: It exhibits a good-natured learning-curve, it is efficient, available on virtually any platform, and provides sophisticated integration mechanisms for existing programs. In this paper, we will describe the steps, required to provide Python bindings for existing programs and to finally generate an integrated simulation environment. In addition, we will give a short introduction into selected software design demands associated with the development of such a framework. We will especially focus on testing and (both technical and user-oriented) documentation issues. Dr.LiTHO Python files contain not only all simulation parameter settings but also the simulation flow, providing maximum flexibility. In addition to relatively simple batch jobs, repetitive tasks can be pooled in libraries. And as Python is a full-blown programming language, users can add virtually any functionality, which is especially useful in the scope of simulation studies or optimization tasks, that often require masses of evaluations. Furthermore, we will give a short overview of the numerous existing Python packages. Several examples demonstrate the feasibility and productiveness of integrating Python packages into custom Dr.LiTHO scripts.

Optimization of Synthetic Aperture Image Quality

DEFF Research Database (Denmark)

Moshavegh, Ramin; Jensen, Jonas; Villagómez Hoyos, Carlos Armando

2016-01-01

Synthetic Aperture (SA) imaging produces high-quality images and velocity estimates of both slow and fast flow at high frame rates. However, grating lobe artifacts can appear both in transmission and reception. These affect the image quality and the frame rate. Therefore optimization of parameter...

Synthetic Aperture Beamformation using the GPU

DEFF Research Database (Denmark)

Hansen, Jens Munk; Schaa, Dana; Jensen, Jørgen Arendt

2011-01-01

A synthetic aperture ultrasound beamformer is implemented for a GPU using the OpenCL framework. The implementation supports beamformation of either RF signals or complex baseband signals. Transmit and receive apodization can be either parametric or dynamic using a fixed F-number, a reference...

First Beam Based Aperture Measurements in the Arcs of the CERN Large Hadron Collider

CERN Document Server

Redaelli, S; Calaga, R; Dehning, B; Giovannozzi, M; Roncarolo, F; Tomás, R

2010-01-01

The LHC injection tests performed in August and early September 2008 in preparation for the circulating beam operation provided the first opportunity to measure with beam the mechanical aperture in two LHC sectors (2-3 and 7- 8). The aperture was probed by exciting free oscillations and local orbit bumps of the injected beam trajectories. Intensities of a few 109 protons were used to remain safely below the quench limit of superconductingmagnets in case of beam losses. The methods used to measure the mechanical aperture, the available on-line tools, and beam measurements for both sectors are presented. Detailed comparisons with the expected results from the as-built aperture models are also presented. It is shown that the measurements results are in good agreement with the LHC design aperture.

Hydrocephalus secondary to obstruction of the lateral apertures in two dogs.

Science.gov (United States)

Kent, M; Glass, E N; Haley, A C; Shaikh, L S; Sequel, M; Blas-Machado, U; Bishop, T M; Holmes, S P; Platt, S R

2016-11-01

Traditionally, hydrocephalus is divided into communicating or non-communicating (obstructive) based on the identification of a blockage of cerebrospinal fluid (CSF) flow through the ventricular system. Hydrocephalus ex vacuo refers to ventricular enlargement as a consequence of neuroparenchymal loss. Hydrocephalus related to obstruction of the lateral apertures of the fourth ventricles has rarely been described. The clinicopathologic findings in two dogs with hydrocephalus secondary to obstruction of the lateral apertures of the fourth ventricle are reported. Signs were associated with a caudal cervical spinal cord lesion in one dog and a caudal brain stem lesion in the other dog. Magnetic resonance imaging (MRI) disclosed dilation of the ventricular system, including the lateral recesses of the fourth ventricle. In one dog, postmortem ventriculography confirmed obstruction of the lateral apertures. Microscopic changes were identified in the choroid plexus in both dogs, yet a definitive cause of the obstructions was not identified. The MRI findings in both dogs are similar to membranous occlusion of the lateral and median apertures in human patients. MRI detection of dilation of the entire ventricular system in the absence of an identifiable cause should prompt consideration of an obstruction of the lateral apertures. In future cases, therapeutic interventions aimed at re-establishing CSF flow or ventriculoperitoneal catheterisation should be considered. © 2016 Australian Veterinary Association.

Dynamic aperture ampersand extraction studies for the SSC High-Energy Booster

International Nuclear Information System (INIS)

Chao, A.W.; Dutt, S.K.; Johnson, D.E.; Sen, T.; Yan, Y.

1990-09-01

The final booster in the injector chain for the Superconducting Super Collider is a machine approximately twice the size of the Tevatron. Its design includes approximately 450, 15+ m superconducting dipoles. The original designs specified dipoles with a 7 cm coil-winding diameter and an inner horizontal beam-pipe aperture of 55 mm. This dipole design was chosen in order to provide an adequately large good-field aperture for both the beam injection process and for the slow-extraction of high-energy test beams. With the recent decision to increase the Collider dipole coil-winding diameter to 5 cm, the question of the needed HEB aperture was raised. An argument for dipole commonality between the HEB and Collider was developed, and a preliminary examination of a 5 cm HEB dipole was undertaken. This paper reports the results of a detailed study of the injection dynamic aperture for magnet errors corresponding to both a 5 cm and 7 cm dipole. Also studied and reported are preliminary results of the resonant-extraction process for the two magnet designs in question. These studies are in the form of multiparticle computer simulations. The results of the studies indicate that the 7 cm dipole design is consistent with the desired performance requirements for the HEB, while the 5 cm dipole design is marginal. We have not studied intermediate aperture values. 8 refs., 11 figs

Coded diffraction system in X-ray crystallography using a boolean phase coded aperture approximation

Science.gov (United States)

Pinilla, Samuel; Poveda, Juan; Arguello, Henry

2018-03-01

Phase retrieval is a problem present in many applications such as optics, astronomical imaging, computational biology and X-ray crystallography. Recent work has shown that the phase can be better recovered when the acquisition architecture includes a coded aperture, which modulates the signal before diffraction, such that the underlying signal is recovered from coded diffraction patterns. Moreover, this type of modulation effect, before the diffraction operation, can be obtained using a phase coded aperture, just after the sample under study. However, a practical implementation of a phase coded aperture in an X-ray application is not feasible, because it is computationally modeled as a matrix with complex entries which requires changing the phase of the diffracted beams. In fact, changing the phase implies finding a material that allows to deviate the direction of an X-ray beam, which can considerably increase the implementation costs. Hence, this paper describes a low cost coded X-ray diffraction system based on block-unblock coded apertures that enables phase reconstruction. The proposed system approximates the phase coded aperture with a block-unblock coded aperture by using the detour-phase method. Moreover, the SAXS/WAXS X-ray crystallography software was used to simulate the diffraction patterns of a real crystal structure called Rhombic Dodecahedron. Additionally, several simulations were carried out to analyze the performance of block-unblock approximations in recovering the phase, using the simulated diffraction patterns. Furthermore, the quality of the reconstructions was measured in terms of the Peak Signal to Noise Ratio (PSNR). Results show that the performance of the block-unblock phase coded apertures approximation decreases at most 12.5% compared with the phase coded apertures. Moreover, the quality of the reconstructions using the boolean approximations is up to 2.5 dB of PSNR less with respect to the phase coded aperture reconstructions.

75 FR 81643 - In the Matter of Certain Semiconductor Products Made by Advanced Lithography Techniques and...

Science.gov (United States)

2010-12-28

... Semiconductor Products Made by Advanced Lithography Techniques and Products Containing Same; Notice of... Mexico) (``STC''), alleging a violation of section 337 in the importation, sale for [[Page 81644

Subwavelength optical lithography via classical light: A possible implementation

Science.gov (United States)

You, Jieyu; Liao, Zeyang; Hemmer, P. R.; Zubairy, M. Suhail

2018-04-01

The resolution of an interferometric optical lithography system is about the half wavelength of the illumination light. We proposed a method based on Doppleron resonance to achieve a resolution beyond half wavelength [Phys. Rev. Lett. 96, 163603 (2006), 10.1103/PhysRevLett.96.163603]. Here, we analyze a possible experimental demonstration of this method in the negatively charged silicon-vacancy (SiV-) system by considering realistic experimental parameters. Our results show that quarter wavelength resolution and beyond can be achieved in this system even in room temperature without using perturbation theory.

Optical near-field lithography on hydrogen-passivated silicon surfaces

DEFF Research Database (Denmark)

Madsen, Steen; Müllenborn, Matthias; Birkelund, Karen

1996-01-01

by the optical near field, were observed after etching in potassium hydroxide. The uncoated fibers can also induce oxidation without light exposure, in a manner similar to an atomic force microscope, and linewidths of 50 nm have been achieved this way. (C) 1996 American Institute of Physics.......We report on a novel lithography technique for patterning of hydrogen-passivated amorphous silicon surfaces. A reflection mode scanning near-field optical microscope with uncoated fiber probes has been used to locally oxidize a thin amorphous silicon layer. Lines of 110 nm in width, induced...

Multichannel silicon WDM ring filters fabricated with DUV lithography

Science.gov (United States)

Lee, Jong-Moo; Park, Sahnggi; Kim, Gyungock

2008-09-01

We have fabricated 9-channel silicon wavelength-division-multiplexing (WDM) ring filters using 193 nm deep-ultraviolet (DUV) lithography and investigated the spectral properties of the ring filters by comparing the transmission spectra with and without an upper cladding. The average channel-spacing of the 9-channel WDM ring filter with a polymeric upper cladding is measured about 1.86 nm with the standard deviation of the channel-spacing about 0.34 nm. The channel crosstalk is about -30 dB, and the minimal drop loss is about 2 dB.

Direct-write maskless lithography using patterned oxidation of Si-substrate Induced by femtosecond laser pulses

Science.gov (United States)

Kiani, Amirkianoosh; Venkatakrishnan, Krishnan; Tan, Bo

2013-03-01

In this study we report a new method for direct-write maskless lithography using oxidized silicon layer induced by high repetition (MHz) ultrafast (femtosecond) laser pulses under ambient condition. The induced thin layer of predetermined pattern can act as an etch stop during etching process in alkaline etchants such as KOH. The proposed method can be leading to promising solutions for direct-write maskless lithography technique since the proposed method offers a higher degree of flexibility and reduced time and cost of fabrication which makes it particularly appropriate for rapid prototyping and custom scale manufacturing. A Scanning Electron Microscope (SEM), Micro-Raman, Energy Dispersive X-ray (EDX), optical microscope and X-ray diffraction spectroscopy (XRD) were used to evaluate the quality of oxidized layer induced by laser pulses.

Aligned nanowire growth using lithography-assisted bonding of a polycarbonate template for neural probe electrodes

International Nuclear Information System (INIS)

Yoon, Hargsoon; Deshpande, Devesh C; Ramachandran, Vasuda; Varadan, Vijay K

2008-01-01

This research presents a fabrication method of vertically aligned nanowires on substrates using lithography-assisted template bonding (LATB) towards developing highly efficient electrodes for biomedical applications at low cost. A polycarbonate template containing cylindrical nanopores is attached to a substrate and the nanopores are selectively opened with a modified lithography process. Vertically aligned nanowires are grown by electrochemical deposition through these open pores on polyimide film and silicon substrates. The process of opening the nanopores is optimized to yield uniform growth of nanowires. The morphological, crystalline, and electrochemical properties of the resulting vertically aligned nanowires are discussed using scanning electron microscopy (SEM), x-ray diffraction (XRD), and electrochemical analysis tools. The potential application of this simple and inexpensive fabrication technology is discussed in the development of neural probe electrodes

Nonparaxial propagation and focusing properties of azimuthal-variant vector fields diffracted by an annular aperture.

Science.gov (United States)

Gu, Bing; Xu, Danfeng; Pan, Yang; Cui, Yiping

2014-07-01

Based on the vectorial Rayleigh-Sommerfeld integrals, the analytical expressions for azimuthal-variant vector fields diffracted by an annular aperture are presented. This helps us to investigate the propagation behaviors and the focusing properties of apertured azimuthal-variant vector fields under nonparaxial and paraxial approximations. The diffraction by a circular aperture, a circular disk, or propagation in free space can be treated as special cases of this general result. Simulation results show that the transverse intensity, longitudinal intensity, and far-field divergence angle of nonparaxially apertured azimuthal-variant vector fields depend strongly on the azimuthal index, the outer truncation parameter and the inner truncation parameter of the annular aperture, as well as the ratio of the waist width to the wavelength. Moreover, the multiple-ring-structured intensity pattern of the focused azimuthal-variant vector field, which originates from the diffraction effect caused by an annular aperture, is experimentally demonstrated.

An Anomaly Detector Based on Multi-aperture Mapping for Hyperspectral Data

Directory of Open Access Journals (Sweden)

LI Min

2016-10-01

Full Text Available Considering the correlationship of spectral content between anomaly and clutter background, inaccurate selection of background pixels induced estimation error of background model. In order to solve the above problems, a multi-aperture mapping based anomaly detector was proposed in this paper. Firstly, differing from background model which focused on feature extraction of background, multi-aperture mapping of hyperspectral data characterized the feature of whole hyperspectral data. According to constructed basis set of multi-aperture mapping, anomaly salience index of every test pixel was proposed to measure the relative statistic difference. Secondly, in order to analysis the moderate salience anomaly precisely, membership value was constructed to identify anomaly salience of test pixels continuously based on fuzzy logical theory. At same time, weighted iterative estimation of multi-aperture mapping was expected to converge adaptively with membership value as weight. Thirdly, classical defuzzification was proposed to fuse different detection results. Hyperspectral data was used in the experiments, and the robustness and sensitivity to anomaly with lower silence of proposed detector were tested.

Aperture Valve for the Mars Organic Molecule Analyzer (MOMA)

Science.gov (United States)

Hakun, Claef F.; Engler, Charles D.; Barber, Willie E.; Canham, John S.

2014-01-01

NASA's participation in the multi-nation ExoMars 2018 Rover mission includes a critical astrobiology Mass Spectrometer Instrument on the Rover called the Mars Organic Molecule Analyzer (MOMA). The Aperture Valve is a critical electromechanical valve used by the Mass Spectrometer to facilitate the transfer of ions from Martian soil to the Mass Spectrometer for analysis. The MOMA Aperture Valve development program will be discussed in terms of the Initial valve design and subsequent improvements that resulted from prototype testing. The Initial Aperture Valve concept seemed promising, based on calculations and perceived merits. However, performance results of this design were disappointing, due to delamination of TiN and DLC coatings applied to the Titanium base metals, causing debris from the coatings to seize the valve. While peer reviews and design trade studies are important forums to vet a concept design, results from testing should not be underestimated.Despite the lack of development progress to meet requirements, valuable information from weakness discovered in the Initial Valve design was used to develop a second, more robust Aperture valve. Based on a check-ball design, the ETU flight valve design resulted in significantly less surface area to create the seal. Moreover, PVD coatings were eliminated in favor of hardened, nonmagnetic corrosion resistant alloys. Test results were impressive, with the valve achieving five orders of magnitude better sealing leak rate over end of life requirements. Cycle life was equally impressive, achieving 280,000 cycles without failure.

Study on characteristics of the aperture-averaging factor of atmospheric scintillation in terrestrial optical wireless communication

Science.gov (United States)

Shen, Hong; Liu, Wen-xing; Zhou, Xue-yun; Zhou, Li-ling; Yu, Long-Kun

2018-02-01

In order to thoroughly understand the characteristics of the aperture-averaging effect of atmospheric scintillation in terrestrial optical wireless communication and provide references for engineering design and performance evaluation of the optics system employed in the atmosphere, we have theoretically deduced the generally analytic expression of the aperture-averaging factor of atmospheric scintillation, and numerically investigated characteristics of the apertureaveraging factor under different propagation conditions. The limitations of the current commonly used approximate calculation formula of aperture-averaging factor have been discussed, and the results showed that the current calculation formula is not applicable for the small receiving aperture under non-uniform turbulence link. Numerical calculation has showed that aperture-averaging factor of atmospheric scintillation presented an exponential decline model for the small receiving aperture under non-uniform turbulent link, and the general expression of the model was given. This model has certain guiding significance for evaluating the aperture-averaging effect in the terrestrial optical wireless communication.

Preliminary study of insertion device effect on dynamic aperture using RACETRACK

International Nuclear Information System (INIS)

Chae, Yong-chul; Crosbie, E.A.

1992-01-01

We studied the effects of an insertion device (ID) on the dynamic aperture using the new version of RACETRACK. We found that the nonlinear effect of the ID is the dominant effect on the dynamic aperture reduction compared to the other multipole errors which exist in the otherwise ideal lattice. The previous study of dynamic aperture was based on the assumption that the effect of the fast oscillating terms in L. Smith's Hamiltonian is small, and hence can be neglected in the simulation. The remarkable agreement between the previous study and the current results using RACETRACK, including all effects of the fast oscillating terms, justified those assumptions at least for the APS ring

Synthetic tracked aperture ultrasound imaging: design, simulation, and experimental evaluation.

Science.gov (United States)

Zhang, Haichong K; Cheng, Alexis; Bottenus, Nick; Guo, Xiaoyu; Trahey, Gregg E; Boctor, Emad M

2016-04-01

Ultrasonography is a widely used imaging modality to visualize anatomical structures due to its low cost and ease of use; however, it is challenging to acquire acceptable image quality in deep tissue. Synthetic aperture (SA) is a technique used to increase image resolution by synthesizing information from multiple subapertures, but the resolution improvement is limited by the physical size of the array transducer. With a large F-number, it is difficult to achieve high resolution in deep regions without extending the effective aperture size. We propose a method to extend the available aperture size for SA-called synthetic tracked aperture ultrasound (STRATUS) imaging-by sweeping an ultrasound transducer while tracking its orientation and location. Tracking information of the ultrasound probe is used to synthesize the signals received at different positions. Considering the practical implementation, we estimated the effect of tracking and ultrasound calibration error to the quality of the final beamformed image through simulation. In addition, to experimentally validate this approach, a 6 degree-of-freedom robot arm was used as a mechanical tracker to hold an ultrasound transducer and to apply in-plane lateral translational motion. Results indicate that STRATUS imaging with robotic tracking has the potential to improve ultrasound image quality.

Swamp plots for dynamic aperture studies of PEP-II lattices

International Nuclear Information System (INIS)

Yan, Y.T.; Irwin, J.; Cai, Y.; Chen, T.; Ritson, D.

1995-01-01

With a newly developed algorithm using resonance basis Lie generators and their evaluation with action-angle Poisson bracket maps (nPB tracking) the authors have been able to perform fast tracking for dynamic aperture studies of PEP-II lattices as well as incorporate lattice nonlinearities in beam-beam studies. They have been able to better understand the relationship between dynamic apertures and the tune shift and resonance coefficients in the generators of the one-turn maps. To obtain swamp plots (dynamic aperture vs. working point) of the PEP-II lattices, they first compute a one-turn resonance basis map for a nominal working point and then perform nPB tracking by switching the working point while holding fixed all other terms in the map. Results have been spot-checked by comparing with element-by-element tracking

Analytical estimation of the dynamic apertures of circular accelerators

International Nuclear Information System (INIS)

Gao, J.

2000-02-01

By considering delta function sextupole, octupole, and deca-pole perturbations and using difference action-angle variable equations, we find some useful analytical formulae for the estimation of the dynamic apertures of circular accelerators due to single sextupole, single octupole, single deca-pole (single 2 m pole in general). Their combined effects are derived based on the Chirikov criterion of the onset of stochastic motions. Comparisons with numerical simulations are made, and the agreement is quite satisfactory. These formulae have been applied to determine the beam-beam limited dynamic aperture in a circular collider. (author)

Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Science.gov (United States)

Kozawa, Takahiro; Oizumi, Hiroaki; Itani, Toshiro; Tagawa, Seiichi

2010-11-01

The development of extreme ultraviolet (EUV) lithography has progressed owing to worldwide effort. As the development status of EUV lithography approaches the requirements for the high-volume production of semiconductor devices with a minimum line width of 22 nm, the extraction of resist parameters becomes increasingly important from the viewpoints of the accurate evaluation of resist materials for resist screening and the accurate process simulation for process and mask designs. In this study, we demonstrated that resist parameters (namely, quencher concentration, acid diffusion constant, proportionality constant of line edge roughness, and dissolution point) can be extracted from the scanning electron microscopy (SEM) images of patterned resists without the knowledge on the details of resist contents using two types of latest EUV resist.

Imprint lithography provides topographical nanocues to guide cell growth in primary cortical cell culture

NARCIS (Netherlands)

Xie, S.; Luttge, R.

2014-01-01

In this paper, we describe a technology platform to study the effect of nanocues on the cell growth direction in primary cortical cell culture. Topographical cues to cells are provided using nanoscale features created by Jet and Flash Imprint Lithography, coated with polyethylenimine. We

75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

Science.gov (United States)

2010-07-27

... Advanced Lithography Techniques and Products Containing Same; Notice of Investigation AGENCY: U.S... violations of section 337 based upon the importation into the United States, the sale for importation, and the sale within the United States after importation of certain semiconductor products made by advanced...

Double Wigner distribution function of a first-order optical system with a hard-edge aperture.

Science.gov (United States)

Pan, Weiqing

2008-01-01

The effect of an apertured optical system on Wigner distribution can be expressed as a superposition integral of the input Wigner distribution function and the double Wigner distribution function of the apertured optical system. By introducing a hard aperture function into a finite sum of complex Gaussian functions, the double Wigner distribution functions of a first-order optical system with a hard aperture outside and inside it are derived. As an example of application, the analytical expressions of the Wigner distribution for a Gaussian beam passing through a spatial filtering optical system with an internal hard aperture are obtained. The analytical results are also compared with the numerical integral results, and they show that the analytical results are proper and ascendant.

Imaging examinations and diagnosis of children's ectopic uretal aperture (with a review of 68 cases)

International Nuclear Information System (INIS)

Zhai Jiankun; Liu Liwei

2004-01-01

Objective: To discuss the imaging findings and examination methods of ectopic uretal aperture in children. Methods: The clinical data, imaging methods and findings of 68 cases with ectopic uretal aperture were analyzed retrospectively. Results: In 44 cases ectopic uretal aperture were associated with duplex kidneys (DK), and in 24 cases ectopic uretal aperture were associated with dysplasia of kidneys. IVU could display direct or indirect signs of DK in all cases. While it could hardly display dysplastic kidney and ectopic uretal aperture. CT scans were performed in 8 patients, in which DK, dysplastic kidney and the draining ureters could be evaluated. Conclusion: Definitive diagnosis is made in most cases with the integrating the clinical information and IVU findings. However, CT scan is recommended in a few cases

Apparatus and method for deterministic control of surface figure during full aperture pad polishing

Science.gov (United States)

Suratwala, Tayyab Ishaq; Feit, Michael Douglas; Steele, William Augustus

2017-10-10

A polishing system configured to polish a lap includes a lap configured to contact a workpiece for polishing the workpiece; and a septum configured to contact the lap. The septum has an aperture formed therein. The radius of the aperture and radius the workpiece are substantially the same. The aperture and the workpiece have centers disposed at substantially the same radial distance from a center of the lap. The aperture is disposed along a first radial direction from the center of the lap, and the workpiece is disposed along a second radial direction from the center of the lap. The first and second radial directions may be opposite directions.

Phase dependence of transport-aperture coordination variability reveals control strategy of reach-to-grasp movements.

Science.gov (United States)

Rand, Miya K; Shimansky, Y P; Hossain, Abul B M I; Stelmach, George E

2010-11-01

Based on an assumption of movement control optimality in reach-to-grasp movements, we have recently developed a mathematical model of transport-aperture coordination (TAC), according to which the hand-target distance is a function of hand velocity and acceleration, aperture magnitude, and aperture velocity and acceleration (Rand et al. in Exp Brain Res 188:263-274, 2008). Reach-to-grasp movements were performed by young adults under four different reaching speeds and two different transport distances. The residual error magnitude of fitting the above model to data across different trials and subjects was minimal for the aperture-closure phase, but relatively much greater for the aperture-opening phase, indicating considerable difference in TAC variability between those phases. This study's goal is to identify the main reasons for that difference and obtain insights into the control strategy of reach-to-grasp movements. TAC variability within the aperture-opening phase of a single trial was found minimal, indicating that TAC variability between trials was not due to execution noise, but rather a result of inter-trial and inter-subject variability of motor plan. At the same time, the dependence of the extent of trial-to-trial variability of TAC in that phase on the speed of hand transport was sharply inconsistent with the concept of speed-accuracy trade-off: the lower the speed, the larger the variability. Conversely, the dependence of the extent of TAC variability in the aperture-closure phase on hand transport speed was consistent with that concept. Taking into account recent evidence that the cost of neural information processing is substantial for movement planning, the dependence of TAC variability in the aperture-opening phase on task performance conditions suggests that it is not the movement time that the CNS saves in that phase, but the cost of neuro-computational resources and metabolic energy required for TAC regulation in that phase. Thus, the CNS

SU-E-J-20: Adaptive Aperture Morphing for Online Correction for Prostate Cancer Radiotherapy

International Nuclear Information System (INIS)

Sandhu, R; Qin, A; Yan, D

2014-01-01

Purpose: Online adaptive aperture morphing is desirable over translational couch shifts to accommodate not only the target position variation but also anatomic changes (rotation, deformation, and relation of target to organ-atrisks). We proposed quick and reliable method for adapting segment aperture leaves for IMRT treatment of prostate. Methods: The proposed method consists of following steps: (1) delineate the contours of prostate, SV, bladder and rectum on kV-CBCT; (2) determine prostate displacement from the rigid body registration of the contoured prostate manifested on the reference CT and the CBCT; (3) adapt the MLC segment apertures obtained from the pre-treatment IMRT planning to accommodate the shifts as well as anatomic changes. The MLC aperture adaptive algorithm involves two steps; first move the whole aperture according to prostate translational/rotational shifts, and secondly fine-tune the aperture shape to maintain the spatial relationship between the planning target contour and the MLC aperture to the daily target contour. Feasibility of this method was evaluated retrospectively on a seven-field IMRT treatment of prostate cancer patient by comparing dose volume histograms of the original plan and the aperture-adjusted plan, with/without additional segments weight optimization (SWO), on two daily treatment CBCTs selected with relative large motion and rotation. Results: For first daily treatment, the prostate rotation was significant (12degree around lateral-axis). With apertureadjusted plan, the D95 to the target was improved 25% and rectum dose (D30, D40) was reduced 20% relative to original plan on daily volumes. For second treatment-fraction, (lateral shift = 6.7mm), after adjustment target D95 improved by 3% and bladder dose (D30, maximum dose) was reduced by 1%. For both cases, extra SWO did not provide significant improvement. Conclusion: The proposed method of adapting segment apertures is promising in treatment position correction

SU-E-J-20: Adaptive Aperture Morphing for Online Correction for Prostate Cancer Radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Sandhu, R; Qin, A; Yan, D [William Beaumont Hospital, Royal Oak, MI (United States)

2014-06-01

Purpose: Online adaptive aperture morphing is desirable over translational couch shifts to accommodate not only the target position variation but also anatomic changes (rotation, deformation, and relation of target to organ-atrisks). We proposed quick and reliable method for adapting segment aperture leaves for IMRT treatment of prostate. Methods: The proposed method consists of following steps: (1) delineate the contours of prostate, SV, bladder and rectum on kV-CBCT; (2) determine prostate displacement from the rigid body registration of the contoured prostate manifested on the reference CT and the CBCT; (3) adapt the MLC segment apertures obtained from the pre-treatment IMRT planning to accommodate the shifts as well as anatomic changes. The MLC aperture adaptive algorithm involves two steps; first move the whole aperture according to prostate translational/rotational shifts, and secondly fine-tune the aperture shape to maintain the spatial relationship between the planning target contour and the MLC aperture to the daily target contour. Feasibility of this method was evaluated retrospectively on a seven-field IMRT treatment of prostate cancer patient by comparing dose volume histograms of the original plan and the aperture-adjusted plan, with/without additional segments weight optimization (SWO), on two daily treatment CBCTs selected with relative large motion and rotation. Results: For first daily treatment, the prostate rotation was significant (12degree around lateral-axis). With apertureadjusted plan, the D95 to the target was improved 25% and rectum dose (D30, D40) was reduced 20% relative to original plan on daily volumes. For second treatment-fraction, (lateral shift = 6.7mm), after adjustment target D95 improved by 3% and bladder dose (D30, maximum dose) was reduced by 1%. For both cases, extra SWO did not provide significant improvement. Conclusion: The proposed method of adapting segment apertures is promising in treatment position correction

Masks for extreme ultraviolet lithography

International Nuclear Information System (INIS)

Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y.

1998-01-01

In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed

Sparse synthetic aperture with Fresnel elements (S-SAFE) using digital incoherent holograms

Science.gov (United States)

Kashter, Yuval; Rivenson, Yair; Stern, Adrian; Rosen, Joseph

2015-01-01

Creating a large-scale synthetic aperture makes it possible to break the resolution boundaries dictated by the wave nature of light of common optical systems. However, their implementation is challenging, since the generation of a large size continuous mosaic synthetic aperture composed of many patterns is complicated in terms of both phase matching and time-multiplexing duration. In this study we present an advanced configuration for an incoherent holographic imaging system with super resolution qualities that creates a partial synthetic aperture. The new system, termed sparse synthetic aperture with Fresnel elements (S-SAFE), enables significantly decreasing the number of the recorded elements, and it is free from positional constrains on their location. Additionally, in order to obtain the best image quality we propose an optimal mosaicking structure derived on the basis of physical and numerical considerations, and introduce three reconstruction approaches which are compared and discussed. The super-resolution capabilities of the proposed scheme and its limitations are analyzed, numerically simulated and experimentally demonstrated. PMID:26367947

Combining rotating-coil measurements of large-aperture accelerator magnets

CERN Document Server

AUTHOR|(CDS)2089510

2016-10-05

The rotating coil is a widely used tool to measure the magnetic field and the field errors in accelerator magnets. The coil has a length that exceeds the entire magnetic field along the longitudinal dimension of the magnet and gives therefore a two-dimensional representation of the integrated field. Having a very good precision, the rotating coil lacks in versatility. The fixed dimensions make it impractical and inapplicable in situations, when the radial coil dimension is much smaller than the aperture or when the aperture is only little covered by the coil. That being the case for rectangular apertures with large aspect ratio, where a basic measurement by the rotating coil describes the field only in a small area of the magnet. A combination of several measurements at different positions is the topic of this work. Very important for a combination is the error distribution on the measured field harmonics. To preserve the good precision of the higher-order harmonics, the combination must not rely on the main ...

Realization of a video-rate distributed aperture millimeter-wave imaging system using optical upconversion

Science.gov (United States)

Schuetz, Christopher; Martin, Richard; Dillon, Thomas; Yao, Peng; Mackrides, Daniel; Harrity, Charles; Zablocki, Alicia; Shreve, Kevin; Bonnett, James; Curt, Petersen; Prather, Dennis

2013-05-01

Passive imaging using millimeter waves (mmWs) has many advantages and applications in the defense and security markets. All terrestrial bodies emit mmW radiation and these wavelengths are able to penetrate smoke, fog/clouds/marine layers, and even clothing. One primary obstacle to imaging in this spectrum is that longer wavelengths require larger apertures to achieve the resolutions desired for many applications. Accordingly, lens-based focal plane systems and scanning systems tend to require large aperture optics, which increase the achievable size and weight of such systems to beyond what can be supported by many applications. To overcome this limitation, a distributed aperture detection scheme is used in which the effective aperture size can be increased without the associated volumetric increase in imager size. This distributed aperture system is realized through conversion of the received mmW energy into sidebands on an optical carrier. This conversion serves, in essence, to scale the mmW sparse aperture array signals onto a complementary optical array. The side bands are subsequently stripped from the optical carrier and recombined to provide a real time snapshot of the mmW signal. Using this technique, we have constructed a real-time, video-rate imager operating at 75 GHz. A distributed aperture consisting of 220 upconversion channels is used to realize 2.5k pixels with passive sensitivity. Details of the construction and operation of this imager as well as field testing results will be presented herein.

Vibrating mirror system suitable for q-switching large-aperture lasers

Energy Technology Data Exchange (ETDEWEB)

Beckwith, P.J.

1977-11-01

Resonant vibrating mirrors provide a convenient means of Q-switching a laser, but large-aperture versions require careful design if the drive power is not to become excessive. This report outlines the design principles involved in the optimisation of moving-iron galvanometer drivers, and describes a prototype device with an aperture of 40 mm x 80 mm which is capable of beam deflections of + or - 40 mrad at 800 Hz. Some suggestions are made concerning more refined designs.

A circular aperture array for ultrasonic tomography and quantitative NDE

Energy Technology Data Exchange (ETDEWEB)

Nielsen, S A

1998-08-01

The main topics of this thesis are ultrasonic tomography and ultrasonic determination of elastic stiffness constants. Both issues are based on a synthetic array with transducer elements distributed uniformly along a circular aperture, i.e., a circular aperture array. The issues are treated both theoretically and experimentally by broadband pulse techniques. Ultrasonic tomography, UCT, from a circular aperture is a relatively new imaging technique in Non-destructive Evaluation (NDE) to acquire cross sectional images in bulk materials. A filtered back-projection algorithm is used to reconstruct images in four different experiments and results of attenuation, velocity and reflection tomograms in Plexiglas of AlSi-alloy cylinders are presented. Two kinds of ultrasonic tomography are introduced: bistatic and monostatic imaging. Both techniques are verified experimentally by Plexiglas cylinders. Different reconstruction artifacts are discussed and theoretical resolution constraints are discussed for various configurations of the circular aperture array. The monostatic technique is used in volumetric imaging. In the experimental verification artificial and real discontinuities in a cylindrical AlSi-alloy are compared with similar discontinuities in a Plexiglas specimen. Finally, some limitations to UCT are discussed. The circular aperture array is used to determine five independent elastic stiffness constants of a unidirectional glass/PET (Poly Ethylene Teraphtalate) laminate. Energy flux propagation and attenuation of ultrasonic waves are considered and velocity surfaces are calculated for different planes of interest. Relations between elastic stiffness constants and engineering constants (i.e., Young`s moduli, shear moduli and Poisson`s ratios) are discussed for an orthotropic composite. Six micromechanical theories are reviewed, and expressions predicting the elastic engineering constants are evaluated. The micromechanical predicted elastic stiffness constants for the

Studies on applications of functional organic-thin-films for lithography on semiconductor device production

International Nuclear Information System (INIS)

Ogawa, Kazufumi

1988-12-01

This report describes some experimental results of studies in an attempt to contribute to the development of ultra-fine lithography which is used for the manufacture of semiconductor devices with design rule below 0.5 μm, and contains (1) manufacture of the exposure apparatus, (2) establishment of the resist process technology, and (3) preparation of the resist materials. The author designed and manufactured the KrF excimer laser stepper which is supposed to be most promising for practical uses. In the resist processing technology, the water-soluble contrast enhanced lithography (CEL) process was developed and this process has advantages is that high pattern contrast and large focus depth latitude were easily obtained. Finally, for resist materials, use of Langmuir-Blodgett (LB) films was investigated since the LB technique provides the method to prepare extremely thin organic films which are uniform in molecular level, and the reaction mechanism of the LB films of unsaturated compounds under irradiation with high energy beams was elucidated. (author)

Finite element Fourier and Abbe transform methods for generalization of aperture function and geometry in Fraunhofer diffraction theory

International Nuclear Information System (INIS)

Kraus, H.G.

1991-01-01

This paper discusses methods for calculating Fraunhofer intensity fields resulting from diffraction through one- and two-dimensional apertures are presented. These methods are based on the geometric concept of finite elements and on Fourier and Abbe transforms. The geometry of the two-dimensional diffracting aperture(s) is based on biquadratic isoparametric elements, which are used to define aperture(s) of complex geometry. These elements are also used to build complex amplitude and phase functions across the aperture(s) which may be of continuous or discontinuous form. The transform integrals are accurately and efficiently integrated numerically using Gaussian quadrature. The power of these methods is most evident in two dimensions, where several examples are presented which include secondary obstructions, straight and curved secondary spider supports, multiple-mirror arrays, synthetic aperture arrays, segmented mirrors, apertures covered by screens, apodization, and phase plates. Typically, the finite element Abbe transform method results in significant gains in computational efficiency over the finite element Fourier transform method, but is also subject to some loss in generality

Position measurement of the direct drive motor of Large Aperture Telescope

Science.gov (United States)

Li, Ying; Wang, Daxing

2010-07-01

Along with the development of space and astronomy science, production of large aperture telescope and super large aperture telescope will definitely become the trend. It's one of methods to solve precise drive of large aperture telescope using direct drive technology unified designed of electricity and magnetism structure. A direct drive precise rotary table with diameter of 2.5 meters researched and produced by us is a typical mechanical & electrical integration design. This paper mainly introduces position measurement control system of direct drive motor. In design of this motor, position measurement control system requires having high resolution, and precisely aligning the position of rotor shaft and making measurement, meanwhile transferring position information to position reversing information corresponding to needed motor pole number. This system has chosen high precision metal band coder and absolute type coder, processing information of coders, and has sent 32-bit RISC CPU making software processing, and gained high resolution composite coder. The paper gives relevant laboratory test results at the end, indicating the position measurement can apply to large aperture telescope control system. This project is subsidized by Chinese National Natural Science Funds (10833004).

X-ray lithography for micro- and nano-fabrication at ELETTRA for interdisciplinary applications

International Nuclear Information System (INIS)

Di Fabrizio, E; Fillipo, R; Cabrini, S

2004-01-01

ELETTRA (http://www.elettra.trieste.it/index.html) is a third generation synchrotron radiation source facility operating at Trieste, Italy, and hosts a wide range of research activities in advanced materials analysis and processing, biology and nano-science at several various beam lines. The energy spectrum of ELETTRA allows x-ray nano-lithography using soft (1.5 keV) and hard x-ray (10 keV) wavelengths. The Laboratory for Interdisciplinary Lithography (LIILIT) was established in 1998 as part of an Italian national initiative on micro- and nano-technology project of INFM and is funded and supported by the Italian National Research Council (CNR), INFM and ELETTRA. LILIT had developed two dedicated lithographic beam lines for soft (1.5 keV) and hard x-ray (10 keV) for micro- and nano-fabrication activities for their applications in engineering, science and bio-medical applications. In this paper, we present a summary of our research activities in micro- and nano-fabrication involving x-ray nanolithography at LILIT's soft and hard x-ray beam lines

Propagation of Bessel-Gaussian beams through a double-apertured fractional Fourier transform optical system.

Science.gov (United States)

Tang, Bin; Jiang, Chun; Zhu, Haibin

2012-08-01

Based on the scalar diffraction theory and the fact that a hard-edged aperture function can be expanded into a finite sum of complex Gaussian functions, an approximate analytical solution for Bessel-Gaussian (BG) beams propagating through a double-apertured fractional Fourier transform (FrFT) system is derived in the cylindrical coordinate. By using the approximate analytical formulas, the propagation properties of BG beams passing through a double-apertured FrFT optical system have been studied in detail by some typical numerical examples. The results indicate that the double-apertured FrFT optical system provides a convenient way for controlling the properties of the BG beams by properly choosing the optical parameters.

X-ray lithography source (SXLS) vacuum system

International Nuclear Information System (INIS)

Schuchman, J.C.; Aloia, J.; Hsieh, H.; Kim, T.; Pjerov, S.

1989-01-01

In 1988 Brookhaven National Laboratory (BNL) was awarded a contract to design and construct a compact light source for x-ray lithography. This award is part of a technology transfer-to-American-industry program. The contract is for an electron storage ring designed for 690 MeV-500 ma operations. It has a racetrack configuration with a circumference to 8.5 meters. The machine is to be constructed in two phases. Phase I (200 MeV-500ma) will primarily be for low energy injection studies and will incorporate all room temperature magnets. For Phase II the two room temperature dipole magnets will be replaced with (4T) superconducting magnets and operation will be at 690 MeV. This paper describes the vacuum system for this machine. 9 refs

Selective binding of oligonucleotide on TiO2 surfaces modified by swift heavy ion beam lithography

International Nuclear Information System (INIS)

Vicente Pérez-Girón, J.; Hirtz, M.; McAtamney, C.; Bell, A.P.; Antonio Mas, J.; Jaafar, M.; Luis, O. de; Fuchs, H.

2014-01-01

We have used swift heavy-ion beam based lithography to create patterned bio-functional surfaces on rutile TiO 2 single crystals. The applied lithography method generates a permanent and well defined periodic structure of micrometre sized square holes having nanostructured TiO 2 surfaces, presenting different physical and chemical properties compared to the surrounding rutile single crystal surface. On the patterned substrates selective binding of oligonucleotides molecules is possible at the surfaces of the holes. This immobilisation process is only being controlled by UV light exposure. The patterned transparent substrates are compatible with fluorescence detection techniques, are mechanically robust, have a high tolerance to extreme chemical and temperature environments, and apparently do not degrade after ten cycles of use. These qualities make the patterned TiO 2 substrates useful for potential biosensor applications

Probing Leader Cells in Endothelial Collective Migration by Plasma Lithography Geometric Confinement

OpenAIRE

Yongliang Yang; Nima Jamilpour; Baoyin Yao; Zachary S. Dean; Reza Riahi; Pak Kin Wong

2016-01-01

When blood vessels are injured, leader cells emerge in the endothelium to heal the wound and restore the vasculature integrity. The characteristics of leader cells during endothelial collective migration under diverse physiological conditions, however, are poorly understood. Here we investigate the regulation and function of endothelial leader cells by plasma lithography geometric confinement generated. Endothelial leader cells display an aggressive phenotype, connect to follower cells via pe...

Registered particles onboard identification in the various apertures of GAMMA-400 space gamma-telescope

Science.gov (United States)

Arkhangelskaja, Irene

2016-07-01

GAMMA-400 (Gamma Astronomical Multifunctional Modular Apparatus) will be the gamma-telescope onboard international satellite gamma-observatory designed for particle registration in the wide energy band. Its parameters are optimized for detection of gamma-quanta with the energy ˜ 100 GeV in the main aperture. The main scientific goals of GAMMA-400 are to investigate fluxes of γ-rays and the electron-positron cosmic ray component possibly generated by dark matter particles decay or annihilation and to search for and study in detail discrete γ-ray sources, to investigate the energy spectra of Galactic and extragalactic diffuse γ-rays, and to study γ-ray bursts and γ-emission from the active Sun. This article presents analysis of detected events identification procedures and energy resolution in three apertures provide particles registration both from upper and lateral directions based on GAMMA-400 modeling due special designed software. Time and segmentation methods are used to reject backsplash (backscattering particles created when high energy γ-rays interact with the calorimeter's matter and move in the opposite direction) in the main aperture while only energy deposition analysis allows to reject this effect in the additional and lateral ones. The main aperture provides the best angular (all strip layers information analysis) and energy (energy deposition in the all detectors studying) resolution in the energy range 0.1 - 3 × 10^{3} GeV. The energy resolution in this band is 1%. Triggers in the main aperture will be formed using information about particle direction provided by time of flight system and presence of charged particle or backsplash signal formed according to analysis of energy deposition in combination of all two-layers anticoincidence systems individual detectors. In the additional aperture gamma-telescope allows to register events in the energy band 10 × 10^{-3} - 3 × 10^{3} GeV. The additional aperture energy resolution provides due to

Hand aperture patterns in prehension.

Science.gov (United States)

Bongers, Raoul M; Zaal, Frank T J M; Jeannerod, Marc

2012-06-01

Although variations in the standard prehensile pattern can be found in the literature, these alternative patterns have never been studied systematically. This was the goal of the current paper. Ten participants picked up objects with a pincer grip. Objects (3, 5, or 7cm in diameter) were placed at 30, 60, 90, or 120cm from the hands' starting location. Usually the hand was opened gradually to a maximum immediately followed by hand closing, called the standard hand opening pattern. In the alternative opening patterns the hand opening was bumpy, or the hand aperture stayed at a plateau before closing started. Two participants in particular delayed the start of grasping with respect to start of reaching, with the delay time increasing with object distance. For larger object distances and smaller object sizes, the bumpy and plateau hand opening patterns were used more often. We tentatively concluded that the alternative hand opening patterns extended the hand opening phase, to arrive at the appropriate hand aperture at the appropriate time to close the hand for grasping the object. Variations in hand opening patterns deserve attention because this might lead to new insights into the coordination of reaching and grasping. Copyright © 2011 Elsevier B.V. All rights reserved.

Formation and function of a new pollen aperture pattern in angiosperms: The proximal sulcus of Tillandsia leiboldiana (Bromeliaceae).

Science.gov (United States)

Albert, Béatrice; Matamoro-Vidal, Alexis; Raquin, Christian; Nadot, Sophie

2010-02-01

Pollen grains are generally surrounded by an extremely resistant wall interrupted in places by apertures that play a key role in reproduction; pollen tube growth is initiated at these sites. The shift from a proximal to distal aperture location is a striking innovation in seed plant reproduction. Reversals to proximal aperture position have only very rarely been described in angiosperms. The genus Tillandsia belongs to the Bromeliaceae family, and its aperture pattern has been described as distal monosulcate, the most widespread aperture patterns recorded in monocots and basal angiosperms. Here we report developmental and functional elements to demonstrate that the sulcate aperture in Tillandsia leiboldiana is not distal as previously described but proximal. Postmeitotic tetrad observation indicates unambiguously the proximal position of the sulcus, and in vitro germination of pollen grains confirms that the aperture is functional. This is the first report of a sulcate proximal aperture with proximal germination. The observation of microsporogenesis reveals specific features in the patterns of callose thickenings in postmeiotic tetrads.

The roles of frequency and aperture in linac accelerator design

International Nuclear Information System (INIS)

Farkas, Z.D.

1989-01-01

Expressions for accelerating structure parameters, including those that determine the peak and average power inputs required to attain a given gradient, are given as functions of aperture to wavelength ratio for a 2π/3 mode disk-loaded guide. The value of the wavelength to aperture ratio varies over a large range, corresponding to group velocities that vary from nearly zero to nearly the speed of light. The parameters exhibit proper asymptotic behavior in both limits. These parameters are benchmark values to which parameters for other modes and for other structure shapes can be compared. For example, it will be shown that the increased peak surface field to accelerating field ratio due to increased aperture to wavelength ratio can be reduced by shaping the iris profile. Structure shapes are varied not only to show possible improvement of structure parameters, but also to improve ease of mechanical fabrication and temperature control. 4 refs., 7 figs., 1 tab

Nanostructured Polymer Brushes by UV-Assisted Imprint Lithography and Surface-Initiated Polymerization for Biological Functions

NARCIS (Netherlands)

Benetti, Edmondo Maria; Acikgoz, C.; Sui, Xiaofeng; Vratzov, Boris; Hempenius, Mark A.; Huskens, Jurriaan; Vancso, Gyula J.

2011-01-01

Functional polymer brush nanostructures are obtained by combining step-and-flash imprint lithography (SFIL) with controlled, surface-initiated polymerization (CSIP). Patterning is achieved at length scales such that the smallest elements have dimensions in the sub-100 nm range. The patterns exhibit

An integrated structural and geochemical study of fracture aperture growth in the Campito Formation of eastern California

Science.gov (United States)

Doungkaew, N.; Eichhubl, P.

2015-12-01

Processes of fracture formation control flow of fluid in the subsurface and the mechanical properties of the brittle crust. Understanding of fundamental fracture growth mechanisms is essential for understanding fracture formation and cementation in chemically reactive systems with implications for seismic and aseismic fault and fracture processes, migration of hydrocarbons, long-term CO2 storage, and geothermal energy production. A recent study on crack-seal veins in deeply buried sandstone of east Texas provided evidence for non-linear fracture growth, which is indicated by non-elliptical kinematic fracture aperture profiles. We hypothesize that similar non-linear fracture growth also occurs in other geologic settings, including under higher temperature where solution-precipitation reactions are kinetically favored. To test this hypothesis, we investigate processes of fracture growth in quartzitic sandstone of the Campito Formation, eastern California, by combining field structural observations, thin section petrography, and fluid inclusion microthermometry. Fracture aperture profile measurements of cemented opening-mode fractures show both elliptical and non-elliptical kinematic aperture profiles. In general, fractures that contain fibrous crack-seal cement have elliptical aperture profiles. Fractures filled with blocky cement have linear aperture profiles. Elliptical fracture aperture profiles are consistent with linear-elastic or plastic fracture mechanics. Linear aperture profiles may reflect aperture growth controlled by solution-precipitation creep, with the aperture distribution controlled by solution-precipitation kinetics. We hypothesize that synkinematic crack-seal cement preserves the elliptical aperture profiles of elastic fracture opening increments. Blocky cement, on the other hand, may form postkinematically relative to fracture opening, with fracture opening accommodated by continuous solution-precipitation creep.

Results from the coded aperture neutron imaging system

International Nuclear Information System (INIS)

Brubaker, Erik; Steele, John T.; Brennan, James S.; Marleau, Peter

2010-01-01

Because of their penetrating power, energetic neutrons and gamma rays (∼1 MeV) offer the best possibility of detecting highly shielded or distant special nuclear material (SNM). Of these, fast neutrons offer the greatest advantage due to their very low and well understood natural background. We are investigating a new approach to fast-neutron imaging - a coded aperture neutron imaging system (CANIS). Coded aperture neutron imaging should offer a highly efficient solution for improved detection speed, range, and sensitivity. We have demonstrated fast neutron and gamma ray imaging with several different configurations of coded masks patterns and detectors including an 'active' mask that is composed of neutron detectors. Here we describe our prototype detector and present some initial results from laboratory tests and demonstrations.

Accelerated yield learning in agressive lithography

Science.gov (United States)

Monahan, Kevin M.; Ashkenaz, Scott M.; Chen, Xing; Lord, Patrick J.; Merrill, Mark A.; Quattrini, Rich; Wiley, James N.

2000-06-01

As exposure wavelengths decrease from 248 nm to 193, 157, and even 13 nm (EUV), small process defects can cause collapse of the lithographic process window near the limits of resolution, particularly for the gate and contact structures in high- performance devices. Such sensitivity poses a challenge for lithography process module control. In this work, we show that yield loss can be caused by a combination of macro, micro, CD, and overlay defects. A defect is defined as any yield- affecting process variation. Each defect, regardless of cause, is assumed to have a specific 'kill potential.' The accuracy of the lithographic yield model can be improved by identifying those defects with the highest kill potential or, more importantly, those that pose the highest economic risk. Such economic considerations have led us to develop a simple heuristic model for understanding sampling strategies in defect metrology and for linking metrology capability to yield and profitability.

High frame rate synthetic aperture duplex imaging

DEFF Research Database (Denmark)

Stuart, Matthias Bo; Tomov, Borislav Gueorguiev; Pihl, Michael Johannes

2013-01-01

aperture flow imaging as demonstrated in this paper. Synthetic aperture, directional beamforming, and cross-correlation are used to produce B-mode and vector velocity images at high frame rates. The frame rate equals the effective pulse repetition frequency of each imaging mode. Emissions for making the B...... estimation is −1.8% and the relative standard deviation 5.4%. The approach can thus estimate both high and low velocities with equal accuracy and thereby makes it possible to present vector flow images with a high dynamic range. Measurements are made using the SARUS research scanner, a linear array......Conventional color flow images are limited in velocity range and can either show the high velocities in systole or be optimized for the lower diastolic velocities. The full dynamics of the flow is, thus, hard to visualize. The dynamic range can be significantly increased by employing synthetic...

Precise Aperture-Dependent Motion Compensation with Frequency Domain Fast Back-Projection Algorithm

Directory of Open Access Journals (Sweden)

Man Zhang

2017-10-01

Full Text Available Precise azimuth-variant motion compensation (MOCO is an essential and difficult task for high-resolution synthetic aperture radar (SAR imagery. In conventional post-filtering approaches, residual azimuth-variant motion errors are generally compensated through a set of spatial post-filters, where the coarse-focused image is segmented into overlapped blocks concerning the azimuth-dependent residual errors. However, image domain post-filtering approaches, such as precise topography- and aperture-dependent motion compensation algorithm (PTA, have difficulty of robustness in declining, when strong motion errors are involved in the coarse-focused image. In this case, in order to capture the complete motion blurring function within each image block, both the block size and the overlapped part need necessary extension leading to degeneration of efficiency and robustness inevitably. Herein, a frequency domain fast back-projection algorithm (FDFBPA is introduced to deal with strong azimuth-variant motion errors. FDFBPA disposes of the azimuth-variant motion errors based on a precise azimuth spectrum expression in the azimuth wavenumber domain. First, a wavenumber domain sub-aperture processing strategy is introduced to accelerate computation. After that, the azimuth wavenumber spectrum is partitioned into a set of wavenumber blocks, and each block is formed into a sub-aperture coarse resolution image via the back-projection integral. Then, the sub-aperture images are straightforwardly fused together in azimuth wavenumber domain to obtain a full resolution image. Moreover, chirp-Z transform (CZT is also introduced to implement the sub-aperture back-projection integral, increasing the efficiency of the algorithm. By disusing the image domain post-filtering strategy, robustness of the proposed algorithm is improved. Both simulation and real-measured data experiments demonstrate the effectiveness and superiority of the proposal.

Role of vision in aperture closure control during reach-to-grasp movements.

Science.gov (United States)

Rand, Miya K; Lemay, Martin; Squire, Linda M; Shimansky, Yury P; Stelmach, George E

2007-08-01

We have previously shown that the distance from the hand to the target at which finger closure is initiated during the reach (aperture closure distance) depends on the amplitude of peak aperture, as well as hand velocity and acceleration. This dependence suggests the existence of a control law according to which a decision to initiate finger closure during the reach is made when the hand distance to target crosses a threshold that is a function of the above movement-related parameters. The present study examined whether the control law is affected by manipulating the visibility of the hand and the target. Young adults made reach-to-grasp movements to a dowel under conditions in which the target or the hand or both were either visible or not visible. Reaching for and grasping a target when the hand and/or target were not visible significantly increased transport time and widened peak aperture. Aperture closure distance was significantly lengthened and wrist peak velocity was decreased only when the target was not visible. Further analysis showed that the control law was significantly different between the visibility-related conditions. When either the hand or target was not visible, the aperture closure distance systematically increased compared to its value for the same amplitude of peak aperture, hand velocity, and acceleration under full visibility. This implies an increase in the distance-related safety margin for grasping when the hand or target is not visible. It has been also found that the same control law can be applied to all conditions, if variables describing hand and target visibility were included in the control law model, as the parameters of the task-related environmental context, in addition to the above movement-related parameters. This suggests that that the CNS utilizes those variables for controlling grasp initiation based on a general control law.

Design of a Large Single-Aperture Dipole Magnet for HL-LHC Upgrade

CERN Document Server

Qingjin, Xu; Iio, Masami; Ogitsu, Toru; Sasaki, Kenichi; Yamamoto, Akira; Todesco, Ezio

2013-01-01

An upgrade of the low-beta insertion system for the ATLAS and Compact Muon Solenoid experiments is proposed in the high luminosity Large Hadron Collider upgrade project. It includes final beam focusing quadrupoles, beam separation and recombination dipoles, and larger aperture matching section quadrupoles. KEK is in charge of the conceptual design of the large aperture separation dipole D1. The latest design parameters are a main field of ~ 5 T at 1.9 K with Nb-Ti superconducting technology, a coil aperture of 160 mm, and a cos-theta one-layer coil with Large Hadron Collider dipole cable. Because the new D1 is expected to be operated in a very high radiation environment, radiation resistance and a cooling scheme are being carefully considered. The collaring-yoke structure is adopted to provide the mechanical support for the single-layer Nb-Ti coil. We summarize the design study of this magnet, including i) the very large iron saturation effect on field quality due to the large aperture and limited size of the...

Terahertz Near-Field Imaging Using Enhanced Transmission through a Single Subwavelength Aperture

Science.gov (United States)

Ishihara, Kunihiko; Ikari, Tomofumi; Minamide, Hiroaki; Shikata, Jun-ichi; Ohashi, Keishi; Yokoyama, Hiroyuki; Ito, Hiromasa

2005-07-01

We demonstrate terahertz (THz) near-field imaging using resonantly enhanced transmission of THz-wave radiation (λ˜ 200 μm) through a bull’s eye structure (a single subwavelength aperture surrounded by concentric periodic grooves in a metal plate). The bull’s eye structure shows extremely large enhanced transmission, which has the advantage for a single subwavelength aperture. The spatial resolution for the bull’s eye structure (with an aperture diameter d=100 μm) is evaluated in the near-field region, and a resolution of 50 μm (corresponding to λ/4) is achieved. We obtain the THz near-field images of the subwavelength metal pattern with a spatial resolution below the diffraction limit.

New Records of Remora brachyptera and R. osteochir (Perciformes: Echeneidae from Korea

Directory of Open Access Journals (Sweden)

Myoung, Se Hun

2015-04-01

Full Text Available The Remora brachyptera and R. osteochir, belonging to the family Echeneidae were collected for the first time off Jeju Island, Korea, in July and August 2013 and off Ganggu-myeon, Yeongdeok-gun, Gyeongsangbuk-do in June 2014. Remora brachyptera is characterized by a sucker with 16 pairs of disc laminae and a dorsal fin that originates anterior of the origin of the anal fin. Remora osteochir is characterized by a sucker with 18 pairs of disc laminae and a sucking disc that extends beyond the posterior end of the pectoral fin. New Korean names proposed for the species are "Meo-ri-ppal-pan-i" for R. brachyptera and "Ppyeo-dae-ppal-pan-i" for R. osteochir.

Coded aperture imaging system for nuclear fuel motion detection

International Nuclear Information System (INIS)

Stalker, K.T.; Kelly, J.G.

1980-01-01

A Coded Aperature Imaging System (CAIS) has been developed at Sandia National Laboratories to image the motion of nuclear fuel rods undergoing tests simulating accident conditions within a liquid metal fast breeder reactor. The tests require that the motion of the test fuel be monitored while it is immersed in a liquid sodium coolant precluding the use of normal optical means of imaging. However, using the fission gamma rays emitted by the fuel itself and coded aperture techniques, images with 1.5 mm radial and 5 mm axial resolution have been attained. Using an electro-optical detection system coupled to a high speed motion picture camera a time resolution of one millisecond can be achieved. This paper will discuss the application of coded aperture imaging to the problem, including the design of the one-dimensional Fresnel zone plate apertures used and the special problems arising from the reactor environment and use of high energy gamma ray photons to form the coded image. Also to be discussed will be the reconstruction techniques employed and the effect of various noise sources on system performance. Finally, some experimental results obtained using the system will be presented

Coded aperture material motion detection system for the ACPR

International Nuclear Information System (INIS)

McArthur, D.A.; Kelly, J.G.

1975-01-01

Single LMFBR fuel pins are being irradiated in Sandia's Annular Core Pulsed Reactor (ACPR). In these experiments single fuel pins have been driven well into the melt and vaporization regions in transients with pulse widths of about 5 ms. The ACPR is being upgraded so that it can be used to irradiate bundles of seven LMFBR fuel pins. The coded aperture material motion detection system described is being developed for this upgraded ACPR, and has for its design goals 1 mm transverse resolution (i.e., in the axial and radial directions), depth resolution of a few cm, and time resolution of 0.1 ms. The target date for development of this system is fall 1977. The paper briefly reviews the properties of coded aperture imaging, describes one possible system for the ACPR upgrade, discusses experiments which have been performed to investigate the feasibility of such a system, and describes briefly the further work required to develop such a system. The type of coded aperture to be used has not yet been fixed, but a one-dimensional section of a Fresnel zone plate appears at this time to have significant advantages

Development of economic MeV-ion microbeam technology at Chiang Mai University

Science.gov (United States)

Singkarat, S.; Puttaraksa, N.; Unai, S.; Yu, L. D.; Singkarat, K.; Pussadee, N.; Whitlow, H. J.; Natyanum, S.; Tippawan, U.

2017-08-01

Developing high technologies but in economic manners is necessary and also feasible for developing countries. At Chiang Mai University, Thailand, we have developed MeV-ion microbeam technology based on a 1.7-MV Tandetron tandem accelerator with our limited resources in a cost-effective manner. Instead of using expensive and technically complex electrostatic or magnetic quadrupole focusing lens systems, we have developed cheap MeV-ion microbeams using programmed L-shaped blade aperture and capillary techniques for MeV ion beam lithography or writing and mapping. The programmed L-shaped blade micro-aperture system consists of a pair of L-shaped movable aperture pieces which are controlled by computer to cut off the ion beam for controlling the beam size down to the micrometer order. The capillary technique utilizes our home-fabricated tapered glass capillaries to realize microbeams. Either system can be installed inside the endstation of the MeV ion beam line of the accelerator. Both systems have been applied to MeV-ion beam lithography or writing of micro-patterns for microfluidics applications to fabricate lab-on-chip devices. The capillary technique is being developed for MeV-ion beam mapping of biological samples. The paper reports details of the techniques and introduces some applications.

Wind energy applications of synthetic aperture radar

DEFF Research Database (Denmark)

Badger, Merete

Synthetic aperture radars (SAR), mounted on satellites or aircraft, have proven useful for ocean wind mapping. Wind speeds at the height 10 m may be retrieved from measurements of radar backscatter using empirical model functions. The resulting windfields are valuable in offshore wind energy plan...

Characterising rock fracture aperture-spacing relationships using power-law relationships: some considerations

Science.gov (United States)

Brook, Martin; Hebblewhite, Bruce; Mitra, Rudrajit

2016-04-01

The size-scaling of rock fractures is a well-studied problem in geology, especially for permeability quantification. The intensity of fractures may control the economic exploitation of fractured reservoirs because fracture intensity describes the abundance of fractures potentially available for fluid flow. Moreover, in geotechnical engineering, fractures are important for parameterisation of stress models and excavation design. As fracture data is often collected from widely-spaced boreholes where core recovery is often incomplete, accurate interpretation and representation of fracture aperture-frequency relationships from sparse datasets is important. Fracture intensity is the number of fractures encountered per unit length along a sample scanline oriented perpendicular to the fractures in a set. Cumulative frequency of fractures (F) is commonly related to fracture aperture (A) in the form of a power-law (F = aA-b), with variations in the size of the a coefficient between sites interpreted to equate to fracture frequency for a given aperture (A). However, a common flaw in this approach is that even a small change in b can have a large effect on the response of the fracture frequency (F) parameter. We compare fracture data from the Late Permian Rangal Coal Measures from Australia's Bowen Basin, with fracture data from Jurassic carbonates from the Sierra Madre Oriental, northeastern Mexico. Both power-law coefficient a and exponent b control the fracture aperture-frequency relationship in conjunction with each other; that is, power-laws with relatively low a coefficients have relatively high b exponents and vice versa. Hence, any comparison of different power-laws must take both a and b into consideration. The corollary is that different sedimentary beds in the Sierra Madre carbonates do not show ˜8× the fracture frequency for a given fracture aperture, as based solely on the comparison of coefficient a. Rather, power-law "sensitivity factors" developed from both

Application of high-resolution film for lithography to synchrotron X-ray topography

International Nuclear Information System (INIS)

Mizuno, Kaoru; Ito, Kazuyoshi; Iwami, Masayuki; Hashimoto, Eiji; Kino, Takao.

1994-01-01

A high-resolution film for lithography is applied to a detector for synchrotron radiation topography, instead of a nuclear plate. The film shows much better resolution than that of the plate although exposure time an about 500 times longer is required. The size distribution of interstitial loops grown as vacancy sources in a nearly perfect aluminum crystal after a temperature rise is examined from the while beam topograph. (author)

High performance Lyot and PIAA coronagraphy for arbitrarily shaped telescope apertures

Energy Technology Data Exchange (ETDEWEB)

Guyon, Olivier; Hinz, Philip M. [Steward Observatory, University of Arizona, Tucson, AZ 85721 (United States); Cady, Eric [Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA 91109 (United States); Belikov, Ruslan [NASA Ames Research Center, Moffett Field, CA 94035 (United States); Martinache, Frantz, E-mail: guyon@naoj.org [National Astronomical Observatory of Japan, Subaru Telescope, Hilo, HI 96720 (United States)

2014-01-10

Two high-performance coronagraphic approaches compatible with segmented and obstructed telescope pupils are described. Both concepts use entrance pupil amplitude apodization and a combined phase and amplitude focal plane mask to achieve full coronagraphic extinction of an on-axis point source. While the first concept, called Apodized Pupil Complex Mask Lyot Coronagraph (APCMLC), relies on a transmission mask to perform the pupil apodization, the second concept, called Phase-Induced Amplitude Apodization complex mask coronagraph (PIAACMC), uses beam remapping for lossless apodization. Both concepts theoretically offer complete coronagraphic extinction (infinite contrast) of a point source in monochromatic light, with high throughput and sub-λ/D inner working angle, regardless of aperture shape. The PIAACMC offers nearly 100% throughput and approaches the fundamental coronagraph performance limit imposed by first principles. The steps toward designing the coronagraphs for arbitrary apertures are described for monochromatic light. Designs for the APCMLC and the higher performance PIAACMC are shown for several monolith and segmented apertures, such as the apertures of the Subaru Telescope, Giant Magellan Telescope, Thirty Meter Telescope, the European Extremely Large Telescope, and the Large Binocular Telescope. Performance in broadband light is also quantified, suggesting that the monochromatic designs are suitable for use in up to 20% wide spectral bands for ground-based telescopes.

A future large-aperture UVOIR space observatory: reference designs

Science.gov (United States)

Rioux, Norman; Thronson, Harley; Feinberg, Lee; Stahl, H. Philip; Redding, Dave; Jones, Andrew; Sturm, James; Collins, Christine; Liu, Alice

2015-09-01

Our joint NASA GSFC/JPL/MSFC/STScI study team has used community-provided science goals to derive mission needs, requirements, and candidate mission architectures for a future large-aperture, non-cryogenic UVOIR space observatory. We describe the feasibility assessment of system thermal and dynamic stability for supporting coronagraphy. The observatory is in a Sun-Earth L2 orbit providing a stable thermal environment and excellent field of regard. Reference designs include a 36-segment 9.2 m aperture telescope that stows within a five meter diameter launch vehicle fairing. Performance needs developed under the study are traceable to a variety of reference designs including options for a monolithic primary mirror.

New non-chemically amplified molecular resist design with switchable sensitivity for multi-lithography applications and nanopatterning

Science.gov (United States)

Thakur, Neha; Guruprasad Reddy, Pulikanti; Nandi, Santu; Yogesh, Midathala; Sharma, Satinder K.; Pradeep, Chullikkattil P.; Ghosh, Subrata; Gonsalves, Kenneth E.

2017-12-01

The development of new photoresist materials for multi-lithography applications is crucial but a challenging task for semiconductor industries. During the last few decades, given the need for new resists to meet the requirements of semiconductor industries, several research groups have developed different resist materials for specific lithography applications. In this context, we have successfully synthesized a new molecular non-chemically amplified resist (n-CAR) (C3) based on the functionalization of aromatic hydroxyl core (4,4‧-(9H-fluorene-9,9-diyl)diphenol) with radiation sensitive sulfonium triflates for various lithography applications. While, micron scale features have been developed using i-line (365 nm) and DUVL (254 nm) exposure tools, electron beam studies on C3 thin films enabled us to pattern 20 nm line features with L/3S (line/space) characteristics on the silicon substrate. The sensitivity and contrast were calculated from the contrast curve analysis as 280 µC cm-2 and 0.025 respectively. Being an important parameter for any newly developed resists, the line edge roughness (LER) of 30 nm (L/5S) features were calculated, using SUMMIT metrology package, to be 3.66  ±  0.3 nm and found to be within the acceptable range. AFM analysis further confirmed 20 nm line width with smooth pattern wall. No deformation of patterned features was observed during AFM analysis which indicated good adhesion property between patterned resists and silicon substrates.

High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

Science.gov (United States)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2015-03-01

We investigated the eco-friendly electron beam (EB) and extreme-ultraviolet (EUV) lithography using a high-sensitive negative type of green resist material derived from biomass to take advantage of organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques. A water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB lithography was developed for environmental affair, safety, easiness of handling, and health of the working people, instead of the common developable process of TMAH. The material design concept to use the water-soluble resist material with acceptable properties such as pillar patterns with less than 100 nm in high EB sensitivity of 10 μC/cm2 and etch selectivity with a silicon-based middle layer in CF4 plasma treatment was demonstrated for EB and EUV lithography.

Parameter scans and accuracy estimates of the dynamical aperture of the CERN LHC

CERN Document Server

Giovannozzi, Massimo

2006-01-01

Techniques to make use of large distributed computing facilities allow for denser parameter scans of the dynamic aperture, i.e., the domain in phase space where bounded single-particle motion prevails. Moreover, one can also increase the number of 'seeds' each of which represents a possible realization of multipolar components around the machine. In this paper the dependence of the dynamic aperture on the step size of the grid of initial conditions and on the number of seeds is studied. Estimates on the accuracy of the dynamic aperture are derived and the definition of an improved protocol for numerical simulations is presented.

Gabor zone-plate apertures for imaging with the mercuric iodide gamma-ray camera

Energy Technology Data Exchange (ETDEWEB)

Patt, B E [EG and G Energy Measurements, Inc., Goleta, CA (USA); Meyyappan, A; Cai, A; Wade, G [California Univ., Santa Barbara (USA). Dept. of Electrical and Computer Engineering

1990-12-20

Gabor zone-plate (GZP) apertures have been developed for use in EG and G EM's mercuric iodide (HgI{sub 2}) gamma-ray camera. The purpose of such an aperture is to increase efficiency, while maintaining good resolution. The GZP is similar to the Fresnel zone plate (FZP) but it has continuous transitions between opaque and transparent regions. Because there are no sharp transitions in the transmission, the inherent interference noise in GZP imaging is lower than that in FZP imaging. GZP parameters were chosen by considering the effects of constraints such as detector pixel size, number of pixels, minimum field of view required, maximum angle of incidence tolerated, and the Nyquist criterion for the minimum sampling rate. As a result an aperture was designed and fabricated with eight zones and a diameter of 3 cm. Lead was chosen as the aperture medium due to its high attenuation coefficient. Experimental data were obtained from the camera with the above GZP aperture. The point-spread function was determined and compared to the calculated response. Excellent agreement was obtained. The reconstruction process involves simulating, by computer, planar-wave illumination of a scaled transparency of the image and recording the intensity pattern at the focal plane. (orig.).

Ultra-Lightweight Large Aperture Support Structures, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Ultra-lightweight membranes may prove to be very attractive for large aperture systems, but their value will be fully realized only if they are mated with equally...

Compact 13.5-nm free-electron laser for extreme ultraviolet lithography

Directory of Open Access Journals (Sweden)

Y. Socol

2011-04-01

Full Text Available Optical lithography has been actively used over the past decades to produce more and more dense integrated circuits. To keep with the pace of the miniaturization, light of shorter and shorter wavelength was used with time. The capabilities of the present 193-nm UV photolithography were expanded time after time, but it is now believed that further progress will require deployment of extreme ultraviolet (EUV lithography based on the use of 13.5-nm radiation. However, presently no light source exists with sufficient average power to enable high-volume manufacturing. We report here the results of a study that shows the feasibility of a free-electron laser EUV source driven by a multiturn superconducting energy-recovery linac (ERL. The proposed 40×20  m^{2} facility, using MW-scale consumption from the power grid, is estimated to provide about 5 kW of average EUV power. We elaborate the self-amplified spontaneous emission (SASE option, which is presently technically feasible. A regenerative-amplifier option is also discussed. The proposed design is based on a short-period (2–3 cm undulator. The corresponding electron beam energy is about 0.5–1.0 GeV. The proposed accelerator consists of a photoinjector, a booster, and a multiturn ERL.

Synthetic Aperture Ultrasound Imaging

DEFF Research Database (Denmark)

Jensen, Jørgen Arendt; Nikolov, Svetoslav; Gammelmark, Kim Løkke

2006-01-01

The paper describes the use of synthetic aperture (SA) imaging in medical ultrasound. SA imaging is a radical break with today's commercial systems, where the image is acquired sequentially one image line at a time. This puts a strict limit on the frame rate and the possibility of acquiring...... a sufficient amount of data for high precision flow estimation. These constrictions can be lifted by employing SA imaging. Here data is acquired simultaneously from all directions over a number of emissions, and the full image can be reconstructed from this data. The talk will demonstrate the many benefits...

Aperture measurements with AC dipole

CERN Document Server

Fuster Martinez, Nuria; Dilly, Joschua Werner; Nevay, Laurence James; Bruce, Roderik; Tomas Garcia, Rogelio; Redaelli, Stefano; Persson, Tobias Hakan Bjorn; CERN. Geneva. ATS Department

2018-01-01

During the MDs performed on the 15th of September and 29th of November 2017, we measured the LHC global aperture at injection with a new AC dipole method as well as using the Transverse Damper (ADT) blow-up method used during the 2017 LHC commissioning for benchmarking. In this note, the MD procedure is presented as well as the analysis of the comparison between the two methods. The possible benefits of the new method are discussed.

Quench Performance and Field Quality of FNAL Twin-Aperture 11 T Nb$_{3}$Sn Dipole Model for LHC Upgrades

CERN Document Server

Stoynev, S; Apollinari, G; Auchmann, B; Barzi, E; Izquierdo Bermudez, S; Bossert, R; Chlachidze, G; DiMarco, J; Karppinen, M; Nobrega, F; Novitski, I; Rossi, F; Savary, F; Smekens, D; Strauss, T; Turrioni, D; Velev, G; Zlobin, A V

2017-01-01

A 2 m long single-aperture dipole demonstrator and two 1 m long single-aperture models based on Nb$_{3}$Sn superconductor have been built and tested at FNAL. The two 1 m long collared coils were then assembled in a twin-aperture Nb$_{3}$Sn dipole demonstrator compatible with the LHC main dipole and tested in two thermal cycles. This paper summarizes the quench performance of the FNAL twin-aperture Nb$_{3}$Sn 11 T dipole in the temperature range of 1.9-4.5 K. The results of magnetic measurements for one of the two apertures are also presented. Test results are compared to the performance of coils in a single-aperture configuration. A summary of quench propagation studies in both apertures is given.

Application status and prospect of X-ray lithography technology

International Nuclear Information System (INIS)

Xie Changqing; Chen Dapeng; Liu Ming; Ye Tianchun; Yi Futing

2004-01-01

Because of its many merits, such as high resolution, large depth of focus, large field size, high throughput, large process latitude, easy extendibility to 50 nm and below ground rule, and so on, the Proximity X-ray Lithography (PXL) is very attractive for the 100 nm and smaller ground rule integrated circuit manufacturing. In this paper, the international research and development status of PXL is briefly introduced firstly, and both its application status and prospect in nanoelectronics research, Monolithic Microwave Integrated Circuits (MMIC) production and silicon-based Ultra Large Scale Integrated Circuits (ULSIC) production are described, and the recent research progress in home PXL is also presented briefly. (authors)

Dynamic Aperture Studies for SPEAR 3

International Nuclear Information System (INIS)

Nosochkov, Yuri

1999-01-01

The SSRL is investigating an accelerator upgrade project to replace the present 130 nm.rad FODO lattice with an 18 nm.rad double bend achromat lattice: SPEAR 3. In this paper, we review the methods used to maximize the SPEAR 3 dynamic aperture including optimization of linear optics, betatron tune, chromaticity and coupling correction, and effects of machine errors and insertion devices

Sonar path correction in synthetic aperture processing

NARCIS (Netherlands)

Groen, J.; Hansen, R.E.; Sabel, J.C.

2003-01-01

In the next generation of mine hunting sonars, in particular on Autonomous Underwater Vehicles (AUVs), Synthetic Aperture Sonar (SAS) will play an important role. The benefit of SAS is to increase resolution and signal-tonoise ratio by coherent processing of successive pings. A challenge in SAS is

Estimation and control of large-scale systems with an application to adaptive optics for EUV lithography

NARCIS (Netherlands)

Haber, A.

2014-01-01

Extreme UltraViolet (EUV) lithography is a new technology for production of integrated circuits. In EUV lithographic machines, optical elements are heated by absorption of exposure energy. Heating induces thermoelastic deformations of optical elements and consequently, it creates wavefront

Dynamic Aperture Optimization for Low Emittance Light Sources

CERN Document Server

Kramer, Stephen L

2005-01-01

State of the art low emittance light source lattices, require small bend angle dipole magnets and strong quadrupoles. This in turn creates large chromaticity and small value of dispersion in the lattice. To counter the high chromaticity strong sextupoles are required which limit the dynamic aperture. Traditional methods for expanding the dynamic aperture use harmonic sextupoles to counter the tune shift with amplitude. This has been successful up to now, but is non-deterministic and limited as the sextupole strength increases, driving higher order nonlinearities. We have taken a different approach that makes use of the tune flexibility of a TBA lattice to minimize the lowest order nonlinearities, freeing the harmonic sextupoles to counter the higher order nonlinearities. This procedure is being used to improve the nonlinear dynamics of the NSLS-II lattice.

Frequency division transmission imaging and synthetic aperture reconstruction

DEFF Research Database (Denmark)

Gran, Fredrik; Jensen, Jørgen Arendt

2006-01-01

In synthetic transmit aperture imaging only a few transducer elements are used in every transmission, which limits the signal-to-noise ratio (SNR). The penetration depth can be increased by using all transmitters in every transmission. In this paper, a method for exciting all transmitters in every...... corresponding to the excitation waveforms, the different transmitters can be decoded at the receiver. The matched filter of a specific waveform will allow information only from this waveform to pass through, thereby separating it from the other waveforms. This means that all transmitters can be used in every...... transmission, and the information from the different transmitters can be separated instantaneously. Compared to traditional synthetic transmit aperture (STA) imaging, in which the different transmitters are excited sequentially, more energy is transmitted in every transmission, and a better signal...

A variable suppressed aperture and Faraday cup system

International Nuclear Information System (INIS)

Price, H.G.; Charlesworth, T.R.

1979-02-01

The injection system of the NSF accelerator within the high voltage enclosure is illustrated. The optics calls for a waist close to the entrance of the 500 kV accelerator tube. This waist will be the initial diagnostic point on the injection path for determining ion source performance and transmission through the later system. This will be made by determining the beam current after a preliminary mass analysis by the 30 0 magnet. To provide this diagnostic and to enable a waist to be formed at this point, a variable aperture and Faraday cup system is required. The Faraday cup will measure the beam transmitted by the aperture. Maximisation of this beam by adjustment of the preceding optical elements will ensure the waist in the beam at that point. (author)

Correlated statistical uncertainties in coded-aperture imaging

International Nuclear Information System (INIS)

Fleenor, Matthew C.; Blackston, Matthew A.; Ziock, Klaus P.

2015-01-01

In nuclear security applications, coded-aperture imagers can provide a wealth of information regarding the attributes of both the radioactive and nonradioactive components of the objects being imaged. However, for optimum benefit to the community, spatial attributes need to be determined in a quantitative and statistically meaningful manner. To address a deficiency of quantifiable errors in coded-aperture imaging, we present uncertainty matrices containing covariance terms between image pixels for MURA mask patterns. We calculated these correlated uncertainties as functions of variation in mask rank, mask pattern over-sampling, and whether or not anti-mask data are included. Utilizing simulated point source data, we found that correlations arose when two or more image pixels were summed. Furthermore, we found that the presence of correlations was heightened by the process of over-sampling, while correlations were suppressed by the inclusion of anti-mask data and with increased mask rank. As an application of this result, we explored how statistics-based alarming is impacted in a radiological search scenario

Double-layer imprint lithography on wafers and foils from the submicrometer to the millimeter scale

NARCIS (Netherlands)

Moonen, P.F.; Yakimets, I.; Peter, M.; Meinders, E.R.; Huskens, J.

2011-01-01

In this paper, a thermal imprint technique, double-layer nanoimprint lithography (dlNIL), is introduced, allowing complete filling of features in the dimensional range of submicrometer to millimeter. The imprinting and filling quality of dlNIL was studied on Si substrates as a model system and

Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture

Energy Technology Data Exchange (ETDEWEB)

Leonard, J. T., E-mail: jtleona01@gmail.com; Yonkee, B. P.; Cohen, D. A.; Megalini, L.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Lee, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2016-01-18

We demonstrate a III-nitride nonpolar vertical-cavity surface-emitting laser (VCSEL) with a photoelectrochemically (PEC) etched aperture. The PEC lateral undercut etch is used to selectively remove the multi-quantum well (MQW) region outside the aperture area, defined by an opaque metal mask. This PEC aperture (PECA) creates an air-gap in the passive area of the device, allowing one to achieve efficient electrical confinement within the aperture, while simultaneously achieving a large index contrast between core of the device (the MQW within the aperture) and the lateral cladding of the device (the air-gap formed by the PEC etch), leading to strong lateral confinement. Scanning electron microscopy and focused ion-beam analysis is used to investigate the precision of the PEC etch technique in defining the aperture. The fabricated single mode PECA VCSEL shows a threshold current density of ∼22 kA/cm{sup 2} (25 mA), with a peak output power of ∼180 μW, at an emission wavelength of 417 nm. The near-field emission profile shows a clearly defined single linearly polarized (LP) mode profile (LP{sub 12,1}), which is in contrast to the filamentary lasing that is often observed in III-nitride VCSELs. 2D mode profile simulations, carried out using COMSOL, give insight into the different mode profiles that one would expect to be displayed in such a device. The experimentally observed single mode operation is proposed to be predominantly a result of poor current spreading in the device. This non-uniform current spreading results in a higher injected current at the periphery of the aperture, which favors LP modes with high intensities near the edge of the aperture.

Fabrication of sub-micrometric metallic hollow-core structures by laser interference lithography

International Nuclear Information System (INIS)

Pérez, Noemí; Tavera, Txaber; Rodríguez, Ainara; Ellman, Miguel; Ayerdi, Isabel; Olaizola, Santiago M.

2012-01-01

Highlights: ► Arrays of hollow-core sub-micrometric structures are fabricated. ► Laser interference lithography is used for the pattering of the resist sacrificial layer. ► The removal of the sacrificial layer gives rise to metallic channels with a maximum crosssectional area of 0.1 μm 2 . ► These structures can be used in nanofluidics. - Abstract: This work presents the fabrication of hollow-core metallic structures with a complete laser interference lithography (LIL) process. A negative photoresist is used as sacrificial layer. It is exposed to the pattern resulting from the interference of two laser beams, which produces a structure of photoresist lines with a period of 600 nm. After development of the resist, platinum is deposited on the samples by DC sputtering and the resist is removed with acetone. The resulting metallic structures consist in a continuous platinum film that replicates the photoresist relief with a hollow core. The cross section of the channels is up to 0.1 μm 2 . The fabricated samples are characterized by FESEM and FIB. This last tool helps to provide a clear picture of the shape and size of the channels. Conveniently dimensioned, this array of metallic submicrometric channels can be used in microfluidic or IC cooling applications.

Rapid manufacturing of low-noise membranes for nanopore sensors by trans-chip illumination lithography

International Nuclear Information System (INIS)

Janssen, Xander J A; Jonsson, Magnus P; Plesa, Calin; Soni, Gautam V; Dekker, Cees; Dekker, Nynke H

2012-01-01

In recent years, the concept of nanopore sensing has matured from a proof-of-principle method to a widespread, versatile technique for the study of biomolecular properties and interactions. While traditional nanopore devices based on a nanopore in a single layer membrane supported on a silicon chip can be rapidly fabricated using standard microfabrication methods, chips with additional insulating layers beyond the membrane region can provide significantly lower noise levels, but at the expense of requiring more costly and time-consuming fabrication steps. Here we present a novel fabrication protocol that overcomes this issue by enabling rapid and reproducible manufacturing of low-noise membranes for nanopore experiments. The fabrication protocol, termed trans-chip illumination lithography, is based on illuminating a membrane-containing wafer from its backside such that a photoresist (applied on the wafer’s top side) is exposed exclusively in the membrane regions. Trans-chip illumination lithography permits the local modification of membrane regions and hence the fabrication of nanopore chips containing locally patterned insulating layers. This is achieved while maintaining a well-defined area containing a single thin membrane for nanopore drilling. The trans-chip illumination lithography method achieves this without relying on separate masks, thereby eliminating time-consuming alignment steps as well as the need for a mask aligner. Using the presented approach, we demonstrate rapid and reproducible fabrication of nanopore chips that contain small (12 μm × 12 μm) free-standing silicon nitride membranes surrounded by insulating layers. The electrical noise characteristics of these nanopore chips are shown to be superior to those of simpler designs without insulating layers and comparable in quality to more complex designs that are more challenging to fabricate. (paper)

Process strategies for ultra-deep x-ray lithography at the Advanced Photon Source

International Nuclear Information System (INIS)

Mancini, D.C.; Moldovan, N.; Divan, R.; De Carlo, F.; Yaeger, J.

2001-01-01

For the past five years, we have been investigating and advancing processing capabilities for deep x-ray lithography (DXRL) using synchrotron radiation from a bending magnet at the Advanced Photon Source (APS), with an emphasis on ultra-deep structures (1mm to 1cm thick). The use of higher-energy x-rays has presented many challenges in developing optimal lithographic techniques for high-aspect ratio structures: mask requirements, resist preparation, exposure, development, and post-processing. Many problems are more severe for high-energy exposure of thicker films than for sub-millimeter structures and affect resolution, processing time, adhesion, damage, and residue. A number of strategies have been created to overcome the challenges and limitations of ultra-deep x-ray lithography (UDXRL), that have resulted in the current choices for mask, substrate, and process flow at the APS. We describe our current process strategies for UDXRL, how they address the challenges presented, and their current limitations. We note especially the importance of the process parameters for use of the positive tone resist PMMA for UDXRL, and compare to the use of negative tone resists such as SU-8 regarding throughput, resolution, adhesion, damage, and post-processing.

Fabrication of superconducting MgB2 nanostructures by an electron beam lithography-based technique

Science.gov (United States)

Portesi, C.; Borini, S.; Amato, G.; Monticone, E.

2006-03-01

In this work, we present the results obtained in fabrication and characterization of magnesium diboride nanowires realized by an electron beam lithography (EBL)-based method. For fabricating MgB2 thin films, an all in situ technique has been used, based on the coevaporation of B and Mg by means of an e-gun and a resistive heater, respectively. Since the high temperatures required for the fabrication of good quality MgB2 thin films do not allow the nanostructuring approach based on the lift-off technique, we structured the samples combining EBL, optical lithography, and Ar milling. In this way, reproducible nanowires 1 μm long have been obtained. To illustrate the impact of the MgB2 film processing on its superconducting properties, we measured the temperature dependence of the resistance on a nanowire and compared it to the original magnesium diboride film. The electrical properties of the films are not degraded as a consequence of the nanostructuring process, so that superconducting nanodevices may be obtained by this method.

Surface-enhanced Raman scattering active gold nanoparticle/nanohole arrays fabricated through electron beam lithography

Science.gov (United States)

Wu, Tsunghsueh; Lin, Yang-Wei

2018-03-01

Effective surface-enhanced Raman scattering (SERS)-active substrates from gold nanoparticle and gold nanohole arrays were successfully fabricated through electron beam lithography with precise computer-aided control of the unit size and intergap distance. Their SERS performance was evaluated using 4-mercaptobenzoic acid (4-MBA). These gold arrays yielded strong SERS signals under 785 nm laser excitation. The enhancement factors for 4-MBA molecules on the prepared gold nanoparticle and nanohole arrays maxed at 1.08 × 107 and 8.61 × 106, respectively. The observed increase in SERS enhancement was attributed to the localized surface plasmon resonance (LSPR) wavelength shifting toward the near-infrared regime when the gold nanohole diameter increased, in agreement with the theoretical prediction in this study. The contribution of LSPR to the Raman enhancement from nanohole arrays deposited on fluorine-doped tin oxide glass was elucidated by comparing SERS and transmission spectra. This simple fabrication procedure, which entails employing electron beam lithography and the controllability of the intergap distance, suggests highly promising uses of nanohole arrays as functional components in sensing and photonic devices.