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Sample records for antimonides

  1. Synthesis and properties of antimonide nanowires

    Science.gov (United States)

    Mattias Borg, B.; Wernersson, Lars-Erik

    2013-05-01

    Antimonide semiconductors are suitable for low-power electronics and long-wavelength optoelectronic applications. In recent years research on antimonide nanowires has become a rapidly growing field, and nano-materials have promising applications in fundamental physics research, for tunnel field-effect transistors, and long-wavelength detectors. In this review, we give an overview of the field of antimonide nanowires, beginning with a description of the synthesis of these nano-materials. Here we summarize numerous reports on antimonide nanowire growth, with the aim to give an overall picture of the distinctive properties of antimonide nanowire synthesis. Secondly, we review the data on the physical properties and emerging applications for antimonide nanowires, focusing on applications in electronics and optics.

  2. Growth and characterization of indium antimonide and gallium ...

    Indian Academy of Sciences (India)

    Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters ...

  3. MBE System for Antimonide Based Semiconductor Lasers

    National Research Council Canada - National Science Library

    Lester, Luke

    1999-01-01

    .... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

  4. Extrinsic point defects in aluminum antimonide

    OpenAIRE

    Erhart, Paul; Åberg, Daniel; Lordi, Vincenzo

    2010-01-01

    We investigate thermodynamic and electronic properties of group IV (C, Si, Ge, Sn) and group VI (O, S, Se, Te) impurities as well as P and H in aluminum antimonide (AlSb) using first-principles calculations. To this end, we compute the formation energies of a broad range of possible defect configurations including defect complexes with the most important intrinsic defects. We also obtain relative scattering cross strengths for these defects to determine their impact on charge carrier mobility...

  5. Intrinsic point defects in aluminum antimonide

    OpenAIRE

    Åberg, Daniel; Erhart, Paul; Williamson, Andrew J.; Lordi, Vincenzo

    2010-01-01

    Calculations within density functional theory on the basis of the local density approximation are carried out to study the properties of intrinsic point defects in aluminum antimonide. Special care is taken to address finite-size effects, band gap error, and symmetry reduction in the defect structures. The correction of the band gap is based on a set of GW calculations. The most important defects are identified to be the aluminum interstitial $Al_{i,Al}^{1+}$, the antimony antisites $Sb_{Al}^...

  6. Antimonide Heterostructure Nanowires - Growth, Physics and Devices

    OpenAIRE

    Borg, Mattias

    2012-01-01

    This thesis investigates the growth and application of antimonide heterostructure nanowires for low-power electronics. In the first part of the thesis, GaSb, InSb and InAsSb nanowire growth is presented, and the distinguishing features of the growth are described. It is found that the presence of Sb results in more than 50 at. % group-III concentration in the Au seed particle on top of the nanowires. It is further concluded that the effective V/III ratio inside the seed particle is reduced co...

  7. The Contribution of Antimonide Surface Reconstructions to Heterostructure Interface Roughness

    National Research Council Canada - National Science Library

    Bracker, A. S; Barvosa-Carter, W; Culbertson, J. C; Nosho, B. Z; Whitman, L. J; Shanabrook, B. V; Bennett, B. R; Yang, M. J

    1999-01-01

    ... for the 6.1 Angstrom family of compound semiconductors (InAs, GaSb, AlSb). The structure and stoichiometry of MBE-grown antimonide surfaces lead to growth and roughening mechanisms that are distinctly different from other III-V materials...

  8. Self- and zinc diffusion in gallium antimonide

    Energy Technology Data Exchange (ETDEWEB)

    Nicols, Samuel Piers [Univ. of California, Berkeley, CA (United States)

    2002-01-01

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT

  9. Self- and zinc diffusion in gallium antimonide

    International Nuclear Information System (INIS)

    Nicols, Samuel Piers

    2002-01-01

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT

  10. Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications

    Energy Technology Data Exchange (ETDEWEB)

    Saroop, Sudesh [Rensselaer Polytechnic Inst., Troy, NY (United States)

    1999-09-01

    Recombination processes in antimonide-based (TPV) devices have been investigated using a technique, in which a Nd-YAG pulsed laser is materials for thermophotovoltaic radio-frequency (RF) photoreflectance used to excite excess carriers and the short-pulse response and photoconductivity decay are monitored with an inductively-coupled non-contacting RF probe. The system has been used to characterize surface and bulk recombination mechanisms in Sb-based materials.

  11. Annealing of defects in indium antimonide after ion bombardment

    International Nuclear Information System (INIS)

    Bogatyrev, V.A.; Kachurin, G.A.

    1977-01-01

    Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

  12. Low temperature solution synthesis of zinc antimonide, manganese antimonide, and strontium ruthenate compounds

    Science.gov (United States)

    Noblitt, Jennifer Lenkner

    2011-12-01

    Increasing energy demands are fueling research in the area of renewable energy and energy storage. In particular, Li-ion batteries and superconducting wires are attractive choices for energy storage. Improving safety, simplifying manufacturing processes, and advancing technology to increase energy storage capacity is necessary to compete with current marketed energy storage devices. These advancements are accomplished through the study of new materials and new morphologies. Increasing dependence on and rising demand for portable electronic devices has continued to drive research in the area of Li-ion batteries. In order to compete with existing batteries and be applicable to future energy needs such as powering hybrid vehicles, the drawbacks of Li-ion batteries must be addressed including (i) low power density, (ii) safety, and (iii) high manufacturing costs. These drawbacks can be addressed through new materials and morphologies for the anode, cathode, and electrolyte. New intermetallic anode materials such as ZnSb, MnSb, and Mn2Sb are attractive candidates to replace graphite, the current industry standard anode material, because they are safer while maintaining comparable theoretical capacity. Electrodeposition is an inexpensive method that could be used for the synthesis of these electrode materials. Direct electrodeposition allows for excellent electrical contact to the current collector without the use of a binder. To successfully electrodeposit zinc and manganese antimonides, metal precursors with excellent solubility in water were needed. To promote solubility, particularly for the antimony precursor, coordinating ligands were added to the deposition bath solutions. This work shows that the choice of coordinating ligand and metal-ligand speciation can alter both the electrochemistry and the film composition. This work focuses on the search for appropriate coordinating ligands, solution pH, and bath temperatures so that high quality films of ZnSb, MnSb, and

  13. Indium antimonide crystal defects formed by fast neutron irradiation

    International Nuclear Information System (INIS)

    Vitovskij, N.A.; Dolgolenko, A.P.; Mashovets, T.V.; Oganesyan, O.V.

    1979-01-01

    It is shown, that indium antimonide irradiation with fast neutrons of reactor results in the formation of disorded regions with a mean radius of approximately 130 A surrounded with space charge regions forming barriers for main carriers. But the found values of defect cluster depolarization coefficient (Lsub(x)sup(n)=0.18 and Lsub(x)sup(p)=0.29) show, that the clusters have marked conductivity for main charge carriers. The found position of the Fermi level in the disorded regions Esub(F)=Esub(c)-0.085 eV does not depend on the impurity type and its concentration in an initial material. The disorded regions play the main part in charge carrier scattering at low temperatures and markedly contribute to the change of mobility at 80 K. It is found, that irradiation temperature change in the range from 77 to 300 K does not effect practically on the disorded region parameters

  14. Study on actinoid isolation by antimonide ion exchanger

    Energy Technology Data Exchange (ETDEWEB)

    Tsuji, Masamichi [Tokyo Inst. of Tech. (Japan). Faculty of Science; Kubota, Masumitsu; Yamagishi, Isao

    1996-01-01

    To establish a containment of long-life nuclides and an effective reduction of waste volume is important to reduce the loadings on the natural environment. Chemical isolation of radioactive nuclides from wastes was attempted by using inorganic ion exchanger with high specificity and thermal stability. In this study, titanium antimonide was used as an ion exchanger to investigate the adsorption of trivalent metallic ions according to Kielland plot curves. When the ionic equivalent fraction (X-bar{sub M}) was around 0.005, Kielland plot curve of either of 3-valent metallic ions was bent, suggesting the exchanger had two different adsorption sites. The slope of the curve became smaller as an elevation of temperature. These results show that the ion radius was decreased resulting from partial elimination of the hydrated water of ion and thus, the steric conditions around the exchange site might be improved. (M.N.)

  15. Room temperature aluminum antimonide radiation detector and methods thereof

    Energy Technology Data Exchange (ETDEWEB)

    Lordi, Vincenzo; Wu, Kuang Jen J.; Aberg, Daniel; Erhart, Paul; Coombs, III, Arthur W; Sturm, Benjamin W

    2015-03-03

    In one embodiment, a method for producing a high-purity single crystal of aluminum antimonide (AlSb) includes providing a growing environment with which to grow a crystal, growing a single crystal of AlSb in the growing environment which comprises hydrogen (H.sub.2) gas to reduce oxide formation and subsequent incorporation of oxygen impurities in the crystal, and adding a controlled amount of at least one impurity to the growing environment to effectively incorporate at least one dopant into the crystal. In another embodiment, a high energy radiation detector includes a single high-purity crystal of AlSb, a supporting structure for the crystal, and logic for interpreting signals obtained from the crystal which is operable as a radiation detector at a temperature of about 25.degree. C. In one embodiment, a high-purity single crystal of AlSb includes AlSb and at least one dopant selected from a group consisting of selenium (Se), tellurium (Te), and tin (Sn).

  16. Pulsed laser deposition: A viable route for the growth of aluminum antimonide film

    Science.gov (United States)

    Das, S.; Ghosh, B.; Hussain, S.; Bhar, R.; Pal, A. K.

    2015-06-01

    Aluminum antimonide films (AlSb) were successfully deposited on glass substrates by ablating an aluminum antimonide target using pulsed Nd-YAG laser. Films deposited at substrate temperatures 773 K and above showed zinc blende structure. Increase in substrate temperature culminated in grain growth in the films. Photoluminescence studies indicated a strong peak 725 nm ( 1.71 eV) and 803 nm ( 1.55 eV). Films deposited at higher deposition temperatures indicated lower residual strain. Characteristic Raman peaks for AlSb at 151 cm-1 followed by two peaks located at 71 cm-1 and 116 cm-1 were also observed.

  17. Power Generation by Zinc Antimonide Thin Film under Various Load Resistances at its Critical Operating Temperature

    DEFF Research Database (Denmark)

    Mir Hosseini, Seyed Mojtaba; Rezaniakolaei, Alireza; Rosendahl, Lasse Aistrup

    Thermoelectric generators (TEGs) use the Seebeck effect in semiconductors for direct conversion of heat to electrical energy. Zinc antimonide films were deposited on polished fused silica substrates by co-sputtering method in Aarhus University. This study focuses on stability of zinc antimonide...... slightly reduces during unload conditions, although it is expected that by eliminating load in each step, the initial amount of voltage exactly repeats. Similar behavior is observed for Seebeck coefficient distribution versus time of working particularly in lower load resistances. Based on variation...

  18. Experimental Investigation of Zinc Antimonide Thin Film Thermoelectric Element over Wide Range of Operating Conditions

    DEFF Research Database (Denmark)

    Hosseini, Seyed Mojtaba Mir; Rezaniakolaei, Alireza; Blichfeld, Anders Bank

    2017-01-01

    flows in plane with the thin film. At first, the effect of applying different temperatures at the hot side of the specimen is investigated to reach steady state in an open circuit analysis. Then, the study focuses on performance and stability analysis of the thermoelectric element operating under......Zinc antimonide compounds are among the most efficient thermoelectric (TE) materials with exceptional low thermal conductivity at moderate temperatures up to 350 °C. This study aims to evaluate the performance of a zinc antimonide thin film TE deposited on an insulating substrate, while the heat...

  19. Indium antimonide nanowires arrays for promising thermoelectric converters

    Directory of Open Access Journals (Sweden)

    Gorokh G. G.

    2015-02-01

    Full Text Available The authors have theoretically substantiated the possibility to create promising thermoelectric converters based on quantum wires. The calculations have shown that the use of quantum wires with lateral dimensions smaller than quantum confinement values and high concentration and mobility of electrons, can lead to a substantial cooling of one of the contacts up to tens of degrees and to the heating of the other. The technological methods of manufacturing of indium antimonide nanowires arrays with high aspect ratio of the nanowire diameters to their length in the modified nanoporous anodic alumina matrixes were developed and tested. The microstructure and composition of the formed nanostructures were investigated. The electron microscopy allowed establishing that within each pore nanowires are formed with diameters of 35 nm and a length of 35 microns (equal to the matrix thickness. The electron probe x-ray microanalysis has shown that the atomic ratio of indium and antimony in the semiconductor nanostructures amounted to 38,26% and 61,74%, respectively. The current-voltage measurement between the upper and lower contacts of Cu/InSb/Cu structure (1 mm2 has shown that at 2.82 V negative voltage at the emitter contact, current density is 129,8 A/cм2, and the collector contact is heated up to 75 degrees during 150 sec. Thus, the experimental results confirmed the theoretical findings that the quantum wire systems can be used to create thermoelectric devices, which can be widely applied in electronics, in particular, for cooling integrated circuits (processors, thermal controlling of the electrical circuits by changing voltage value.

  20. Sensor of hydrostatic pressure based on gallium antimonide microcrystals

    Directory of Open Access Journals (Sweden)

    Druzhinin A. A.

    2015-08-01

    Full Text Available Currently, silicon and germanium, the most common materials in the production of discrete semiconductor devices and integrated circuits, do not always meet all the requirements to the sensing elements of mechanical quantities sensors. Therefore, it is logical to research the properties of other semiconductor materials that could be used as sensing elements in such sensors. A3B5 semiconductor compounds seem promising for such purpose. Effect of hydrostatic pressure up to 5000 bar on the resistance of n-type antimonide gallium whiskers doped by Se or Te was studied. Coefficient of hydrostatic pressure for this crystals was determined, it equals Kh = (16,5—20,0•10–5 bar–1 at 20°N. Temperature dependence of resistance and coefficient Kh for this crystals in the temperature range ±60°N was studied. Design of the developed hydrostatic pressure sensor based on GaSb whiskers and its characteristics are presented. The possibility to decrease the temperature dependence of sensitive element resistance by mounting GaSb whiskers on the substrates fabricated from materials with different temperature coefficient of expansion was examined. It was shown that mounting of GaSb crystals on Cu substrate gives the optimal result, in this case the temperature coefficient decrease to 0,05%•°N–1, that leads to decrease of output temperature dependence. The main advantages of developed pressure sensor are: the simplified design in comparison with pressure sensors with strain gauges mounted on spring elements; the high sensitivity to pressure that is constant in the wide pressure range; the improvement of sensors metrological characteristics owing to hysteresis absence. The possible application fields of developed sensors are measuring of high and extremely high pressure, chemical and oil industries, measuring of pressure in oil bore-holes, investigation of explosive processes.

  1. Low Cost High Performance Zinc Antimonide Thin Films for Thermoelectric Applications

    DEFF Research Database (Denmark)

    Sun, Ye; Christensen, Mogens; Johnsen, Simon

    2012-01-01

    Zinc antimonide thin films with high thermoelectric performance are produced by a simple sputtering method. The phase-pure Zn4Sb3 and ZnSb thin films fulfill the key requirements for commercial TE power generation: cheap elements, cheap fabrication method, high performance and thermal stability...

  2. X-Ray Characterization of Quaternary Antimonide Materials for Mid-IR Lasers

    National Research Council Canada - National Science Library

    Lester, Luke

    2001-01-01

    .... This PL trace was generated using the equipment purchased with the grant money. We believe that new alloys constructed from AlInAsSb and GaInAsSb will be the backbone of future antimonide-based semiconductor lasers...

  3. Development of an electronic device quality aluminum antimonide (AlSb) semiconductor for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Sherohman, John W; Yee, Jick Hong; Combs, III, Arthur W

    2014-11-11

    Electronic device quality Aluminum Antimonide (AlSb)-based single crystals produced by controlled atmospheric annealing are utilized in various configurations for solar cell applications. Like that of a GaAs-based solar cell devices, the AlSb-based solar cell devices as disclosed herein provides direct conversion of solar energy to electrical power.

  4. Asymptotic Analysis of Melt Growth for Antimonide-Based Compound Semiconductor Crystals in Magnetic and Electric Fields

    National Research Council Canada - National Science Library

    Ma, Nancy

    2006-01-01

    Single crystals of doped and alloyed antimonide-based semiconductors are needed for Air Force Applications because they serve as transparent, lattice-matched epitaxial growth templates for detectors...

  5. Elastic, thermal and high pressure structural properties of heavy rare earth antimonides

    International Nuclear Information System (INIS)

    Soni, P.; Pagare, G.; Sanyal, S.P.

    2009-01-01

    Pressure induced structural phase transition of two heavy rare earth antimonides (RESb; RE=Ho, Er) have been studied theoretically by using an inter-ionic potential theory. This method has been found quite satisfactory in the case of pnictides of rare earth and describes the crystal properties in the framework of rigid-ion modal. The long-range Coulomb interaction, short-range repulsive interaction and van der Waals (vdW) interactions are properly incorporated in this theory. These compounds exhibit first order crystallographic phase transition from their NaCl-type structure to CsCl-type structure at 27 GPa and 33.2 GPa, respectively. The bulk moduli of RESb compounds are compared with the experimental values of elastic constants. We have also calculated the Debye temperature by incorporating the elastic constants for both the rare earth antimonides. (author)

  6. Demonstration of mid and long-wavelength infrared antimonide-based focal plane arrays

    Science.gov (United States)

    Hill, Cory J.; Soibel, Alexander; Keo, Sam A.; Mumolo, Jason M.; Ting, David Z.; Gunapala, Sarath D.; Rhiger, David R.; Kvaas, Robert E.; Harris, Sean F.

    2009-05-01

    We have demonstrated the use of bulk antimonide based materials and type-II antimonide based superlattices in the development of large area mid wavelength infrared (MWIR) focal plane arrays (FPAs) as well as smaller format long wavelength infrared (LWIR) arrays. Barrier infrared photodetectors (BIRDs) and superlattice-based infrared photodetectors are expected to outperform traditional III-V MWIR and LWIR imaging technologies and are expected to offer significant advantages over II-VI material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow InAs/GaSb superlattice pin photodiode and bulk InAsSb structures on GaSb substrates. The coupled quantum well superlattice device offers additional control in wavelength tuning via quantum well sizes and ternary composition. Furthermore, we have fabricated mid-wavelength 1024x1024 pixels superlattice imaging FPAs, 640x512 MWIR arrays based on the BIRD concept, and 256x256 LWIR arrays based on pin superlattice structures. These initial FPA have produced excellent infrared imagery.

  7. Electrical resistivity, Hall coefficient and electronic mobility in indium antimonide at different magnetic fields and temperatures

    International Nuclear Information System (INIS)

    Jee, Madan; Prasad, Vijay; Singh, Amita

    1995-01-01

    The electrical resistivity, Hall coefficient and electronic mobility of n-type and p-type crystals of indium antimonide have been measured from 25 degC-100 degC temperature range. It has been found by this measurement that indium antimonide is a compound semiconductor with a high mobility 10 6 cm 2 /V.S. The Hall coefficient R H was measured as a function of magnetic field strength H for a number of samples of both p and n-type using fields up to 12 kilo gauss. The Hall coefficient R h decreases with increasing magnetic fields as well as with increase in temperature of the sample. The electric field is more effective on samples with high mobilities and consequently the deviations from linearity are manifested at comparatively low values of the electric field. The measurement of R H in weak and strong magnetic fields makes it possible to determine the separate concentration of heavy and light holes. Measured values of Hall coefficient and electrical resistivity show that there is a little variation of ρ and R h with temperatures as well as with magnetic fields. (author). 12 refs., 5 tabs

  8. Elastic properties of gallium antimonide monocrystals under pressure up to 6.4 GPa

    International Nuclear Information System (INIS)

    Goncharov, V.A.; Chernysheva, E.V.; Voronov, F.F.

    1986-01-01

    Pulse-phase method was used to investigate path times of longitudinal and transverse ultrasonic waves at room temperature using monocrystalline samples [100], [110] and [111] of semiconducting gallium antimonide up to 8.2 GPa. A pressure value of phase transformation to metal state was determined from abrupt deviation from monotonous change of dependences measured (6.4±0.4)GPa. Sound propagation rates V i , density ρ, effective elastic constants C i j, Debye temperature Θ and Grueneisen microscopic parameters γ i were calculated for GaSb semiconducting phase. It is shown that elastic properties of GaSb low pressure phase correlate to change peculiarities under pressure of carrier energy spectrum. Experimental results and model representations were compared

  9. Zirconium transition metal (poly)antimonides. Syntheses, characterization and electrochemical properties

    Energy Technology Data Exchange (ETDEWEB)

    Greiwe, Magnus; Krause, Maximilian; Osters, Oliver; Dorantes, Alma; Piana, Michele; Nilges, Tom [Technische Univ. Muenchen, Garching (Germany). Fachgebiet Synthese und Charakterisierung Innovativer Materialien

    2013-09-15

    Herein we report on the syntheses, crystal structures and first electrochemical characterizations of ternary zirconium transition metal (poly)antimonides Zr{sub 2}TSb{sub 3} (with T = Cu, Pd) and Zr{sub 3}TSb{sub 7} (with T = Ni, Pd). The compounds were synthesized by arc-melting, followed by an annealing procedure at elevated temperatures. Phase analysis and structure analysis were performed by powder and single-crystal measurements. The electrochemical properties of all compounds were measured in half cells against lithium to test their potential as anode materials for Li batteries. The Zr{sub 3}TSb{sub 7} phases show metallic behavior with conductivities of 10{sup -1} S cm{sup -1} within a temperature range of 324 to 428 K. (orig.)

  10. Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices

    Directory of Open Access Journals (Sweden)

    Ella Wassweiler

    2016-06-01

    Full Text Available The use of gallium antimonide (GaSb is increasing, especially for optoelectronic devices in the infrared wavelengths. It has been demonstrated in gallium nitride (GaN devices operating at ultraviolet (UV wavelengths, that surface textures increase the overall device efficiency. In this work, we fabricated eight different surface textures in GaSb to be used in enhancing efficiency in infrared wavelength devices. Through chemical etching with hydrofluoric acid, hydrogen peroxide, and tartaric acid we characterize the types of surface textures formed and the removal rate of entire layers of GaSb. Through optimization of the etching recipes we lower the reflectivity from 35.7% to 1% at 4 μm wavelength for bare and textured GaSb, respectively. In addition, we simulate surface textures using ray optics in finite element method solver software to provide explanation of our experimental findings.

  11. Bowtie nanoantenna integrated with indium gallium arsenide antimonide for uncooled infrared detector with enhanced sensitivity.

    Science.gov (United States)

    Choi, Sangjo; Sarabandi, Kamal

    2013-12-10

    A novel high-impedance nanoantenna with an embedded matching network is implemented to realize a highly sensitive infrared detector. A bowtie antenna is operated at its antiparallel resonance and loaded with a small low-bandgap (E(g)=0.52  eV) indium gallium arsenide antimonide (InGaAsSb) p-n junction. The structure is optimized for maximum power transfer and significant field enhancement at its terminals for a desired frequency band where the maximum quantum efficiency of InGaAsSb is observed. The sensitivity improvement of the proposed detector is evaluated against the traditional bulk detector and it is shown that the detectivity is improved by the field enhancement factor, which is approximately 20 for the case considered here.

  12. Atomistic simulation studies of iron sulphide, platinum antimonide and platinum arsenide

    CSIR Research Space (South Africa)

    Ngoepe, PE

    2005-09-01

    Full Text Available studies of iron sulphide, platinum antimonide and platinum arsenide P.E. Ngoepea,b*, P.S. Ntoahaea, S.S. Mangwejanea, H.M. Sitholec, S.C. Parkerd, K.V. Wrighte and N.H. de Leeuwf Introduction Metal sulphide minerals are of industrial significance because...?S) 2.179 2.177 2.703 2.670 2.361 2.381 Me?X 2.269 2.262 2.678 2.642 2.468 2.495 Elastic constants (GPa) C11 352.6 366.0 265.8 266.0 341.9 355.5+ C44 101.7 105.0 59.17 59.05 97.80 84.93+ C12 47.91 47.00 67.87 68.00 74.10 49.60+ Bulk modulus (GPa) B 149...

  13. Experimental Investigation of Zinc Antimonide Thin Films under Different Thermal Boundary Conditions

    DEFF Research Database (Denmark)

    Mir Hosseini, Seyed Mojtaba; Rosendahl, Lasse Aistrup; Rezaniakolaei, Alireza

    Zinc antimonide compound ZnxSby is one of the most efficient thermoelectric (TE) materials known at high temperatures regarding to its exceptional low thermal conductivity. For this reason, it continues to be the focus of active research. However, before practical use in actual conditions......, it is imperative to analyze the thermo electrical behavior of these materials. In this study, the results are considered for different hot side temperature of the film in steady state condition. Six temperatures at hot side of the specimen are provided; 150, 200, 250, 300, 350, and 400 ᵒC. At the beginning of each...... for all cases, showing that the electrical potential difference is increasing by temperature for all cases with the same slope. Also the value of Seebeck coefficient (α) is almost constant for all cases. The obtained value of α can compete with developed bulk TEG materials in literature. The thin film...

  14. Rb based alkali antimonide high quantum efficiency photocathodes for bright electron beam sources and photon detection applications

    Science.gov (United States)

    Cultrera, L.; Gulliford, C.; Bartnik, A.; Lee, H.; Bazarov, I.

    2017-02-01

    High quantum efficiency alkali antimonide photocathodes have been grown over both stainless steel and glass substrates using sequential evaporation of Sb, K, Rb, and Cs. Quantum efficiencies well above 25% have been measured at 400 nm. A bi-alkali Rb-K-Sb photocathode grown on a stainless steel substrate has been installed in a high voltage DC gun at Cornell University and the intrinsic electron beam emittance was measured at different photon energies.

  15. Time-resolved X-ray diffraction at monocrystalline indium antimonide

    International Nuclear Information System (INIS)

    Hoefer, Sebastian

    2014-01-01

    The present work deals with the experimental study of the structural change of the semiconductor indium antimonide (InSb) after excitation by an ultrashort laser pulse (60 fs). The investigation is carried out by ultra-short X-ray pulses (around 100 fs). As a source for ultrashort X-ray pulses serves a laser plasma X-ray source. With this source, a more intense ultrashort optical laser pulse is focused onto a metal foil (intensity to 8.10 16 W/cm 2 ), and by the resulting plasma, there is an emission of X-rays. To characterize the X-ray source a novel Timepix detector was used, which made it possible to detect Bremsstrahlung up to photon energies of 700 keV. The penetration depth of X-rays is usually several micrometers and is thus much greater than the penetration depth of 100 nm of the laser pulse used for excitation. By the use of a highly asymmetric Bragg reflex the penetration depth of X-rays could be adapted to the penetration depth of the excitation pulse. Due to the low penetration depth of 2 ps after excitation an expansion of 4% of a 4 nm thin layer at the surface can already be measured. The excitation of the semiconductor will be described with different models theoretically, the temporal evolution of the deformation obtained therefrom is compared with the performed measurements. [de

  16. Thermal Cycling Behavior of Zinc Antimonide Thin Films for High Temperature Thermoelectric Power Generation Applications.

    Science.gov (United States)

    Shim, Hyung Cheoul; Woo, Chang-Su; Han, Seungwoo

    2015-08-19

    The zinc antimonide compound ZnxSby is one of the most efficient thermoelectric materials known at high temperatures due to its exceptional low thermal conductivity. For this reason, it continues to be the focus of active research, especially regarding its glass-like atomic structure. However, before practical use in actual surroundings, such as near a vehicle manifold, it is imperative to analyze the thermal reliability of these materials. Herein, we present the thermal cycling behavior of ZnxSby thin films in nitrogen (N2) purged or ambient atmosphere. ZnxSby thin films were prepared by cosputtering and reached a power factor of 1.39 mW m(-1) K(-2) at 321 °C. We found maximum power factor values gradually decreased in N2 atmosphere due to increasing resistivity with repeated cycling, whereas the specimen in air kept its performance. X-ray diffraction and electron microscopy observations revealed that fluidity of Zn atoms leads to nanoprecipitates, porous morphologies, and even growth of a coating layer or fiber structures on the surface of ZnxSby after repetitive heating and cooling cycles. With this in mind, our results indicate that proper encapsulation of the ZnxSby surface would reduce these unwanted side reactions and the resulting degradation of thermoelectric performance.

  17. Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.; Dahiya, V.; Cavallo, F. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Myers, S. [SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States); Krishna, S., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States)

    2016-02-29

    We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

  18. Development of High-k Dielectric for Antimonides and a sub 350 degree Celsius III-V pMOSFET Outperforming Germanium

    Science.gov (United States)

    2010-12-01

    Development of high-k dielectric for Antimonides and a sub 350ºC III-V pMOSFET outperforming Germanium Aneesh Nainani, Toshifumi Irisawa, Ze Yuan...dielectric for Antimonides and a sub 350degreeC III-V pMOSFET outperforming Germanium 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...area etch HCl based clean + 100 cyl. ALD Al2O3 @ 300ºC (~10nm) as gate dielectric Aluminum evaporation + Gate patterning Be implant(9e14dose/10keV)+S

  19. Polarized-neutron-scattering study of the spin-wave excitations in the 3-k ordered phase of uranium antimonide.

    Science.gov (United States)

    Magnani, N; Caciuffo, R; Lander, G H; Hiess, A; Regnault, L-P

    2010-03-24

    The anisotropy of magnetic fluctuations propagating along the [1 1 0] direction in the ordered phase of uranium antimonide has been studied using polarized inelastic neutron scattering. The observed polarization behavior of the spin waves is a natural consequence of the longitudinal 3-k magnetic structure; together with recent results on the 3-k-transverse uranium dioxide, these findings establish this technique as an important tool to study complex magnetic arrangements. Selected details of the magnon excitation spectra of USb have also been reinvestigated, indicating the need to revise the currently accepted theoretical picture for this material.

  20. New ternary rare-earth transition-metal antimonides RE{sub 3}MSb{sub 5} (RE = La, Ce, Pr, Nd, Sm; M = Ti, Zr, Hf, Nb)

    Energy Technology Data Exchange (ETDEWEB)

    Bollore, G.; Ferguson, M.J.; Hushagen, R.W. [Univ. of Alberta, Edmonton (Canada)] [and others

    1995-12-01

    Investigations into ternary rare-earth transition-metal antimonide systems RE{sub x}M{sub y}Sb{sub z} have been going on for at least two decades. These studies have been carried out variously to search for new magnetic materials, to test the validity of bonding models, and perhaps most importantly, to systematize an interesting structural chemistry that is not as well understood as that of the corresponding phosphides or arsenides. Some of these antimonides have counterparts in phosphides or arsenides, such as REMSb{sub 2} (M = Mn-Zn, Pd, Ag, Au) with the HfCuSi{sub 2} structure, REM{sub 2}Sb{sub 2} (M = Mn, Ni, Pd) with the CaBe{sub 2}-Ge{sub 2} and ThCr{sub 2}Si{sub 2} structures, and REM{sub 4}Sb{sub 12} (M = Fe, Ru, Os) with the filled skutterudite LaFe{sub 4}P{sub 12} structure. Others, such as RE{sub 3}M{sub 3}Sb{sub 4} (M = Pt, Cu, Au) and REMSb{sub 3} (M = Cr, V) are unique to antimonides so far. The authors report here the synthesis of a new series of ternary-antimonides RE{sub 3}MSb{sub 5} containing an early transition metal M = Ti, Zr, Hf, Nb. 28 refs., 2 figs., 3 tabs.

  1. Modeling, Growth and Characterization of III-V and Dilute Nitride Antimonide Materials and Solar Cells

    Science.gov (United States)

    Maros, Aymeric

    III-V multijunction solar cells have demonstrated record efficiencies with the best device currently at 46 % under concentration. Dilute nitride materials such as GaInNAsSb have been identified as a prime choice for the development of high efficiency, monolithic and lattice-matched multijunction solar cells as they can be lattice-matched to both GaAs and Ge substrates. These types of cells have demonstrated efficiencies of 44% for terrestrial concentrators, and with their upright configuration, they are a direct drop-in product for today's space and concentrator solar panels. The work presented in this dissertation has focused on the development of relatively novel dilute nitride antimonide (GaNAsSb) materials and solar cells using plasma-assisted molecular beam epitaxy, along with the modeling and characterization of single- and multijunction solar cells. Nitrogen-free ternary compounds such as GaInAs and GaAsSb were investigated first in order to understand their structural and optical properties prior to introducing nitrogen. The formation of extended defects and the resulting strain relaxation in these lattice-mismatched materials is investigated through extensive structural characterization. Temperature- and power-dependent photoluminescence revealed an inhomogeneous distribution of Sb in GaAsSb films, leading to carrier localization effects at low temperatures. Tuning of the growth parameters was shown to suppress these Sb-induced localized states. The introduction of nitrogen was then considered and the growth process was optimized to obtain high quality GaNAsSb films lattice-matched to GaAs. Near 1-eV single-junction GaNAsSb solar cells were produced. The best devices used a p-n heterojunction configuration and demonstrated a current density of 20.8 mA/cm2, a fill factor of 64 % and an open-circuit voltage of 0.39 V, corresponding to a bandgap-voltage offset of 0.57 V, comparable with the state-of-the-art for this type of solar cells. Post-growth annealing

  2. Technology to Establish a Factory for High QE Alkali Antimonide Photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Schultheiss, Thomas [Advanced Energy Systems, Inc., Medford, NY (United States)

    2015-11-16

    capable, low emittance, visible-light sensitive photocathodes to the myriad of source systems in use and under development. Successful adoption of photocathodes requires strict adherence to proper fabrication, operation, and maintenance methodologies, necessitating specialized knowledge and skills. Key issues include the choice of photoemitter material, development of a more streamlined growth process to minimize human operator uncertainties, accommodation of varying photoemitter substrate materials and geometries, efficient transport and insertion mechanisms preserving the photo-yield, and properly conveyed photoemitter operational and maintenance methodologies. AES, in collaboration with Cornell University in a Phase I STTR, developed an on-demand industrialized growth and centralized delivery system for high-brightness photocathodes focused upon the alkali antimonide photoemitters. To the end user, future photoemitter sourcing will become as simple as other readily available consumables, rather than a research project requiring large investments in time and personnel.

  3. Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

    Science.gov (United States)

    Xu, Tao; Dick, Kimberly A.; Plissard, Sébastien; Hai Nguyen, Thanh; Makoudi, Younes; Berthe, Maxime; Nys, Jean-Philippe; Wallart, Xavier; Grandidier, Bruno; Caroff, Philippe

    2012-03-01

    III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1-xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs1-xSbx heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell.

  4. Carbon nanofibers with highly dispersed tin and tin antimonide nanoparticles: Preparation via electrospinning and application as the anode materials for lithium-ion batteries

    Science.gov (United States)

    Li, Zhi; Zhang, Jiwei; Shu, Jie; Chen, Jianping; Gong, Chunhong; Guo, Jianhui; Yu, Laigui; Zhang, Jingwei

    2018-03-01

    One-dimensional carbon nanofibers with highly dispersed tin (Sn) and tin antimonide (SnSb) nanoparticles are prepared by electrospinning in the presence of antimony-doped tin oxide (denoted as ATO) wet gel as the precursor. The effect of ATO dosage on the microstructure and electrochemical properties of the as-fabricated Sn-SnSb/C composite nanofibers is investigated. Results indicate that ATO wet gel as the precursor can effectively improve the dispersion of Sn nanoparticles in carbon fiber and prevent them from segregation during the electrospinning and subsequent calcination processes. The as-prepared Sn-SnSb/C nanofibers as the anode materials for lithium-ion batteries exhibit high reversible capacity and stable cycle performance. Particularly, the electrode made from Sn-SnSb/C composite nanofibers obtained with 0.9 g of ATO gel has a high specific capacity of 779 mAh·g-1 and 378 mAh·g-1 at the current density of 50 mA·g-1 and 5 A·g-1, respectively, and it exhibits a capacity retention of 97% after 1200 cycles under the current density of 1 A·g-1. This is because the carbon nanofibers can form a continuous conductive network to buffer the volume change of the electrodes while Sn and Sn-SnSb nanoparticles uniformly distributed in the carbon nanofibers are free of segregation, thereby contributing to electrochemical performances of the electrodes.

  5. Temperature-dependent quantum efficiency degradation of K-Cs-Sb bialkali antimonide photocathodes grown by a triple-element codeposition method

    Directory of Open Access Journals (Sweden)

    Zihao Ding

    2017-11-01

    Full Text Available K-Cs-Sb bialkali antimonide photocathodes grown by a triple-element codeposition method have been found to have excellent quantum efficiency (QE and outstanding near-atomic surface smoothness and have been employed in the VHF gun in the Advanced Photoinjector Experiment (APEX, however, their robustness in terms of their lifetime at elevated photocathode temperature has not yet been investigated. In this paper, the relationship between the lifetime of the K-Cs-Sb photocathode and the photocathode temperature has been investigated. The origin of the significant QE degradation at photocathode temperatures over 70 °C has been identified as the loss of cesium atoms from the K-Cs-Sb photocathode, based on the in situ x-ray analysis on the photocathode film during the decay process. The findings from this work will not only further the understanding of the behavior of K-Cs-Sb photocathodes at elevated temperature and help develop more temperature-robust cathodes, but also will become an important guide to the design and operation of the future high-field rf guns employing the use of such photocathodes.

  6. Superconductivity of metallic aluminum antimonide.

    Science.gov (United States)

    Wittig, J

    1967-02-10

    The high-pressure metallic phase of aluminunm antimnonide is super conducting [critical temperature T(c) (P approximately 125 kilobars) = 2.8 degrees +/-0.2 degrees K]. This transition temperature is significantly lower than the transition temperature of metallic germanium under an equivalent high pressure. A similar result had been previously found for superconducting indiumantimonide in comparison to tin.

  7. Solar cells based on gallium antimonide

    International Nuclear Information System (INIS)

    Andreev, V. M.; Sorokina, S. V.; Timoshina, N. Kh.; Khvostikov, V. P.; Shvarts, M. Z.

    2009-01-01

    Liquid-phase epitaxy and diffusion from the gas phase have been used to create various kinds of GaSb-based solar cell structures intended for use in cascaded solar-radiation converters. A narrow-gap (GaSb) solar cell was studied in tandem based on a combination of semiconductors GaAs-GaSb (two p-n junctions) and GaInP/GaAs-GaSb (three p-n junctions). The maximum efficiency of photovoltaic conversion in GaSb behind the wide-gap cells is η = 6.5% (at sunlight concentration ratio of 275X, AM1.5D Low AOD spectrum).

  8. Alkaline earth filled nickel skutterudite antimonide thermoelectrics

    Science.gov (United States)

    Singh, David Joseph

    2013-07-16

    A thermoelectric material including a body centered cubic filled skutterudite having the formula A.sub.xFe.sub.yNi.sub.zSb.sub.12, where A is an alkaline earth element, x is no more than approximately 1.0, and the sum of y and z is approximately equal to 4.0. The alkaline earth element includes guest atoms selected from the group consisting of Be, Mb, Ca, Sr, Ba, Ra and combinations thereof. The filled skutterudite is shown to have properties suitable for a wide variety of thermoelectric applications.

  9. Sensor of hydrostatic pressure based on gallium antimonide microcrystals

    OpenAIRE

    Druzhinin A. A.; Maryamova I. I.; Kutrakov A. P.; Liakh-Kaguy N. S.

    2015-01-01

    Currently, silicon and germanium, the most common materials in the production of discrete semiconductor devices and integrated circuits, do not always meet all the requirements to the sensing elements of mechanical quantities sensors. Therefore, it is logical to research the properties of other semiconductor materials that could be used as sensing elements in such sensors. A3B5 semiconductor compounds seem promising for such purpose. Effect of hydrostatic pressure up to 5000 bar on the res...

  10. Growth and characterization of indium antimonide and gallium ...

    Indian Academy of Sciences (India)

    Unknown

    from the cyclotron experiments (Dresselhaus et al 1955). The observed mobility has increased steadily with improvement in the purity of the material. For a sample with donor concentration of 8 × 1012 cm–3 an electron mobility of 1⋅1 × 106 cm2/Vs was measured by Grandsen. (1958). However, Keys (1954) had reported a ...

  11. Room temperature electrodeposition of aluminum antimonide compound semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Gandhi, T.; Raja, K.S. [Metallurgical and Materials Engineering, University of Nevada, Mail Stop 388, Reno, NV 89557 (United States); Misra, M. [Metallurgical and Materials Engineering, University of Nevada, Mail Stop 388, Reno, NV 89557 (United States)], E-mail: misra@unr.edu

    2008-10-15

    AlSb is a group III-V compound semiconductor material that is conventionally grown by high temperature processes such as Czochralski and Bridgman methods. Development of a method to synthesize AlSb at room temperature will be more economical to help modulate the electronic properties. In this investigation, a pulsed potential electrodeposition method using a room temperature molten salt system (aluminum trichloride, AlCl{sub 3}/1-methyl-3-ethylimidazolium chloride, EMIC) with an addition of SbCl{sub 3} is discussed. The potential pulse parameters were established by carrying out cyclic voltammetry at different concentrations of SbCl{sub 3} and with varying molar ratios of AlCl{sub 3}/EMIC. Stoichiometric AlSb deposits were obtained from an acidic AlCl{sub 3}/EMIC (1.5:1 molar ratio) melt containing 4 x 10{sup -3} mol/l of SbCl{sub 3} onto an ordered TiO{sub 2} nanotubular template. The AlSb compound was predominantly amorphous in as-deposited condition and annealing at 350 deg. C for 2 h in argon transformed into crystalline phase. The AlSb deposit showed a high resistivity in the order of 10{sup 9} {omega}-cm and a defect concentration of 10{sup 16} cm{sup -3} which was attributed to presence of carbon. The deposits obtained from a basic melt (0.67:1 molar ratio of AlCl{sub 3}/EMIC) were enriched with antimony.

  12. Room temperature electrodeposition of aluminum antimonide compound semiconductor

    International Nuclear Information System (INIS)

    Gandhi, T.; Raja, K.S.; Misra, M.

    2008-01-01

    AlSb is a group III-V compound semiconductor material that is conventionally grown by high temperature processes such as Czochralski and Bridgman methods. Development of a method to synthesize AlSb at room temperature will be more economical to help modulate the electronic properties. In this investigation, a pulsed potential electrodeposition method using a room temperature molten salt system (aluminum trichloride, AlCl 3 /1-methyl-3-ethylimidazolium chloride, EMIC) with an addition of SbCl 3 is discussed. The potential pulse parameters were established by carrying out cyclic voltammetry at different concentrations of SbCl 3 and with varying molar ratios of AlCl 3 /EMIC. Stoichiometric AlSb deposits were obtained from an acidic AlCl 3 /EMIC (1.5:1 molar ratio) melt containing 4 x 10 -3 mol/l of SbCl 3 onto an ordered TiO 2 nanotubular template. The AlSb compound was predominantly amorphous in as-deposited condition and annealing at 350 deg. C for 2 h in argon transformed into crystalline phase. The AlSb deposit showed a high resistivity in the order of 10 9 Ω-cm and a defect concentration of 10 16 cm -3 which was attributed to presence of carbon. The deposits obtained from a basic melt (0.67:1 molar ratio of AlCl 3 /EMIC) were enriched with antimony

  13. High pressure behaviour of heavy rare earth antimonides

    International Nuclear Information System (INIS)

    Pagare, Gitanjali; Soni, Pooja; Srivastava, Vipul; Sanyal, S.P.

    2008-01-01

    We have investigated theoretically the high-pressure structural phase transition and cohesive properties of two heavy rare earth mono anyimonides (LnSb; Ln = Dy and Lu) by using two body interionic potential with necessary modifications to include the effect of Coulomb screening by the delocalized 4f electrons of the RE ion. The peculiar properties of these compounds have been interpreted in terms of the hybridization of f electrons with the conduction band. The calculated compression curves and the values of high-pressure behaviour have been discussed and compared with the experimental results. These compounds exhibits first order crystallographic phase transition from their NaCl (B 1 ) phase to CsCl (B 2 ) phase at 23.6 GPa and 25.4 GPa respectively. At phase transition the % volume collapse for both the compounds are little higher than the measured ones. The NaCl phase possesses lower energy than CsCl phase and stable at ambient pressure. The bulk moduli of LnSb compounds are obtained from the P-V curve fitted by the Birch equation of state. We also calculated the Ln-Ln distance as a function of pressure. (author)

  14. Growth and characterization of indium antimonide and gallium ...

    Indian Academy of Sciences (India)

    Unknown

    The wafers were then stored in methanol for use. In fact, the single crystal wafers {110} obtained from InSb (figure 7) grown by both these techniques were used as substrates for growing thin films using liquid phase epitaxy and results have been published elsewhere. Further, the chemical etching was carried out to study.

  15. Czochralski growth of gallium indium antimonide alloy crystals

    Energy Technology Data Exchange (ETDEWEB)

    Tsaur, S.C.

    1998-02-01

    Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystal seeds up to about 2 to 5 mole% InSb were grown from seeds of 1 to 2 mole% InSb, which were grown from essentially pure GaSb seeds of the [111] direction. Single crystals were grown with InSb rising from about 2 to 6 mole% at the seed ends to about 14 to 23 mole% InSb at the finish ends. A floating-crucible technique that had been effective in reducing segregation in doped crystals, was used to reduce segregation in Czochralski growth of alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb. Crystals close to the targeted composition of 1 mole% InSb were grown. However, difficulties were encountered in reaching higher targeted InSb concentrations. Crystals about 2 mole% were grown when 4 mole% was targeted. It was observed that mixing occurred between the melts rendering the compositions of the melts; and, hence, the resultant crystal unpredictable. The higher density of the growth melt than that of the replenishing melt could have triggered thermosolutal convection to cause such mixing. It was also observed that the floating crucible stuck to the outer crucible when the liquidus temperature of the replenishing melt was significantly higher than that of the growth melt. The homogeneous Ga{sub 1{minus}x}In{sub x}Sb single crystals were grown successfully by a pressure-differential technique. By separating a quartz tube into an upper chamber for crystal growth and a lower chamber for replenishing. The melts were connected by a capillary tube to suppress mixing between them. A constant pressure differential was maintained between the chambers to keep the growth melt up in the growth chamber. The method was first tested with a low temperature alloy Bi{sub 1{minus}x}Sb{sub x}. Single crystals of Ga{sub 1{minus}x}In{sub x}Sb were grown with uniform compositions up to nearly 5 mole% InSb.

  16. Cold electron beams from cryocooled, alkali antimonide photocathodes

    Directory of Open Access Journals (Sweden)

    L. Cultrera

    2015-11-01

    Full Text Available In this paper we report on the generation of cold electron beams using a Cs_{3}Sb photocathode grown by codeposition of Sb and Cs. By cooling the photocathode to 90 K we demonstrate a significant reduction in the mean transverse energy validating the long-standing speculation that the lattice temperature contributes to limiting the mean transverse energy or intrinsic emittance near the photoemission threshold, opening new frontiers in generating ultrabright beams. At 90 K, we achieve a record low intrinsic emittance of 0.2  μm (rms per mm of laser spot diameter from an ultrafast (subpicosecond photocathode with quantum efficiency greater than 7×10^{−5} using a visible laser wavelength of 690 nm.

  17. Zinc Antimonides and Copper Chalcogenides as Thermoelectric Materials

    DEFF Research Database (Denmark)

    Blichfeld, Anders Bank

    2017-01-01

    Thermoelectric materials offer solid state solution to convert waste heat into usable electric energy or to use electrical power for cooling with no movable parts and with no maintenance required. Thermoelectrics possess a large potential in an ever increasing concern with power management...... plasma direct synthesis, single target sputtering, co-deposition sputtering, pulsed laser deposition, melt-quench, and high pressure and high temperature. The resulting samples have been characterized using wealth of X-ray diffraction techniques to probe the atomic ordering on short- and long-range scale...

  18. Stoichiometry-Induced Roughness on Antimonide Growth Surfaces

    National Research Council Canada - National Science Library

    Bracker, A. S; Nosho, B. Z; Barvosa-Carter, W; Whitman, L. J; Bennett, B. R; Shanabrook, B. V; Culbertson, J. C

    2001-01-01

    Phase shifts in the intensity oscillation of reflection high-energy electron diffraction spots provide evidence for monolayer island formation on AlSb that is caused by sudden changes in surface stoichiometry...

  19. Antimonide-based pN Terahertz Mixer Diodes

    Science.gov (United States)

    2011-06-01

    INTRODUCTION The group of semiconductors consisting of InAs, GaSb, AlSb , and InSb and their ternary and quaternary alloys with lattice constants from that of...of RHEED intensity oscillations while growing GaAs, AlSb , and InAs test structures. Eventually, calibration samples of the individual In0.27Ga0.73Sb

  20. Novel strongly correlated electron states in filled skutterudite lanthanide osmium antimonides

    International Nuclear Information System (INIS)

    Maple, M.B.; Frederick, N.A.; Ho, P.-C.; Yuhasz, W.M.; Sayles, T.A.; Butch, N.P.; Jeffries, J.R.; Taylor, B.J.

    2005-01-01

    Recent measurements on the filled skutterudite compounds Pr(Os 1-x Ru x ) 4 Sb 12 , NdOs 4 Sb 12 , and SmOs 4 Sb 12 are discussed. Pr(Os 1-x Ru x ) 4 Sb 12 displays superconductivity for all values of x with a minimum at x=0.6, and only the compounds with x 4 Sb 12 and the BCS superconductivity of PrRu 4 Sb 12 . NdOs 4 Sb 12 is a heavy fermion ferromagnet, with a sharp transition observed at 1.0K. SmOs 4 Sb 12 is also a heavy fermion material, and it may display weak ferromagnetic behavior below 2.6K

  1. Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

    Science.gov (United States)

    Thom, R. D.; Koch, T. L.; Parrish, W. J.

    1978-01-01

    A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

  2. Copper Antimonide Nanowire Array Lithium Ion Anodes Stabilized by Electrolyte Additives.

    Science.gov (United States)

    Jackson, Everett D; Prieto, Amy L

    2016-11-09

    Nanowires of electrochemically active electrode materials for lithium ion batteries represent a unique system that allows for intensive investigations of surface phenomena. In particular, highly ordered nanowire arrays produced by electrodeposition into anodic aluminum oxide templates can lead to new insights into a material's electrochemical performance by providing a high-surface-area electrode with negligible volume expansion induced pulverization. Here we show that for the Li-Cu x Sb ternary system, stabilizing the surface chemistry is the most critical factor for promoting long electrode life. The resulting solid electrolyte interphase is analyzed using a mix of electron microscopy, X-ray photoelectron spectroscopy, and lithium ion battery half-cell testing to provide a better understanding of the importance of electrolyte composition on this multicomponent alloy anode material.

  3. Low-gravity homogenization and solidification of aluminum antimonide. [Apollo-Soyuz test project

    Science.gov (United States)

    Ang, C.-Y.; Lacy, L. L.

    1976-01-01

    The III-V semiconducting compound AlSb shows promise as a highly efficient solar cell material, but it has not been commercially exploited because of difficulties in compound synthesis. Liquid state homogenization and solidification of AlSb were carried out in the Apollo-Soyuz Test Project Experiment MA-044 in the hope that compositional homogeneity would be improved by negating the large density difference between the two constituents. Post-flight analysis and comparative characterization of the space-processed and ground-processed samples indicate that there are major homogeneity improvements in the low-gravity solidified material.

  4. Structural features of indium antimonide quantum dots on the indium arsenide substrate

    Directory of Open Access Journals (Sweden)

    Liliya A. Sokura

    2015-06-01

    Full Text Available The properties of InSb/InAs quantum dots (QDs have been investigated by transmission electron microscopy (TEM. Specific features of diffraction contrast were discovered in plan-view TEM images of big (9–10 nm in height and 38–50 nm in diameter InSb QDs. To understand the origin of such distortions, a model of an InSb QD on InAs substrate containing a partial Frank dislocation (FD was developed and used for calculations of the displacement field and the subsequent diffraction image simulation of an InSb QD for the first time. The shape of the QD was established to have an insignificant influence on the magnitude of radial displacements. The insertion of a misfit defect (a partial Frank dislocation into the QD reduces the strain at the edges of the QD almost by 30%. The comparison of experimental and simulated data allowed us to explain the observed features of the moiré pattern in the image of a big InSb QD by the presence of a misfit defect at the QD-substrate interface.

  5. Effect of Thermal Cycling on Zinc Antimonide Thin Film Thermoelectric Characteristics

    DEFF Research Database (Denmark)

    Hosseini, Seyed Mojtaba Mir; Rezaniakolaei, Alireza; Rosendahl, Lasse Aistrup

    2017-01-01

    is fixed between a heater block and heat sink cooled by the ambient. The thermoelectric element is studied under open circuit and also optimal constant loads corresponding to maximum power output. The thermal cycles are provided for five different hot junction temperatures, 160, 200, 250, 300 and 350 ᵒC...

  6. Structural, morphological and Raman studies of pulse electrosynthesised indium antimonide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Chandel, Tarun; Rajaram, P. [School of Studies in Physics, Jiwaji University, Gwalior (MP), India-474011 (India)

    2015-08-28

    InSb films deposited on fluorine doped tin oxide (FTO) substrates by a pulse elctrodeposition technique. The deposition was carried out at an applied potential −1.3V versus Ag/AgCl electrode. Structural, morphological and optical studies were performed on the electrodeposited InSb. X-ray diffraction (XRD) studies show that the deposited InSb films are polycrystalline in nature having the zinc blend structure. The crystallite size (D), dislocation density (δ) and strain (ε) were calculated using XRD results. The EDAX analysis shows that chemical composition of In{sup 3+} and Sb{sup 3+} ions is close to the required stoichiometry. The surface morphology of the deposited films was examined using scanning electron microscopy (SEM). SEM studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. However, the crystallite size determined by the Scherrer method shows a size close to 30 nm. Surface morphology studies of the InSb films were also performed using atomic force microscopy (AFM). The average surface roughness as measured by AFM is around 40 nm. Hot probe studies show that all the electrodeposited thin films have n type conductivity and the thickness of the films is calculated using electrochemical formula.

  7. Thermal oxidation of single crystal aluminum antimonide and materials having the same

    Energy Technology Data Exchange (ETDEWEB)

    Sherohman, John William; Yee, Jick Hong; Coombs, III, Arthur William; Wu, Kuang Jen J.

    2012-12-25

    In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.

  8. Ultra low emittance electron beams from multi-alkali antimonide photocathode operated with infrared light

    Science.gov (United States)

    Cultrera, L.; Gulliford, C.; Bartnik, A.; Lee, H.; Bazarov, I.

    2016-03-01

    The intrinsic emittance of electron beams generated from a multi-alkali photocathode operated in a high voltage DC gun is reported. The photocathode showed sensitivity extending to the infrared part of the spectrum up to 830 nm. The measured intrinsic emittances of electron beams generated with light having wavelength longer than 800 nm are approaching the limit imposed by the thermal energy of electrons at room temperature with quantum efficiencies comparable to metallic photocathodes used in operation of modern photoinjectors.

  9. Ultra low emittance electron beams from multi-alkali antimonide photocathode operated with infrared light

    Energy Technology Data Exchange (ETDEWEB)

    Cultrera, L.; Gulliford, C.; Bartnik, A.; Lee, H.; Bazarov, I. [Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, New York 14853 (United States)

    2016-03-28

    The intrinsic emittance of electron beams generated from a multi-alkali photocathode operated in a high voltage DC gun is reported. The photocathode showed sensitivity extending to the infrared part of the spectrum up to 830 nm. The measured intrinsic emittances of electron beams generated with light having wavelength longer than 800 nm are approaching the limit imposed by the thermal energy of electrons at room temperature with quantum efficiencies comparable to metallic photocathodes used in operation of modern photoinjectors.

  10. Gravitational influences on the liquid-state homogenization and solidification of aluminum antimonide. [space processing of solar cell material

    Science.gov (United States)

    Ang, C.-Y.; Lacy, L. L.

    1979-01-01

    Typical commercial or laboratory-prepared samples of polycrystalline AlSb contain microstructural inhomogeneities of Al- or Sb-rich phases in addition to the primary AlSb grains. The paper reports on gravitational influences, such as density-driven convection or sedimentation, that cause microscopic phase separation and nonequilibrium conditions to exist in earth-based melts of AlSb. A triple-cavity electric furnace is used to homogenize the multiphase AlSb samples in space and on earth. A comparative characterization of identically processed low- and one-gravity samples of commercial AlSb reveals major improvements in the homogeneity of the low-gravity homogenized material.

  11. Characterization and Modeling of Indium Gallium Antimonide Avalanche Photodiode and of Indium Gallium Arsenide Two-band Detector

    Science.gov (United States)

    2006-01-01

    A model of the optical properties of Al(x)Ga(1-x)As(y)Sb(1-y) and In(x)Ga(1-x)As(y)Sb(1-y) is presented, including the refractive, extinction, absorption and reflection coefficients in terms of the optical dielectric function of the materials. Energy levels and model parameters for each binary compound are interpolated to obtain the needed ternaries and quaternaries for various compositions. Bowing parameters are considered in the interpolation scheme to take into account the deviation of the calculated ternary and quaternary values from experimental data due to lattice disorders. The inclusion of temperature effects is currently being considered.

  12. Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect

    Science.gov (United States)

    2011-05-01

    14]. While extracting the effective mass from SdH oscillations, the background magnetoresistance was corrected as follows. The envelope of maxima... magnetoresistance that was subtracted from the measured ρXX. Fig. 10 shows the periodic SdH oscillations in ΔρXX/ρ0 (after removing the background...demonstration of metal gate plasmon screening and channel strain engineering in high-κ/metal-gate CMOS transistors, and the investigation of the

  13. Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

    Science.gov (United States)

    Razeghi, M.

    2003-09-01

    The properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were reviewed. The growths of the Sb-based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH), multi-quantum well (MQW) and strained superlattice (SSL) lasers in the 3 5 μm range were fabricated. InAs-GaSb type-II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.

  14. Interband Cascade Laser Photon Noise

    Science.gov (United States)

    2009-09-01

    separated by an injection region composed of digitally graded Indium Arsenide (InAs)/ Aluminum Indium Antimonide (Al(In)Sb) multi-QWs. The active region...consists of coupled InAs, Gallium Indium Antimonide (GaInSb) and Gallium Antimonide (GaSb) QWs separated by Aluminum Antimonide (AlSb) barriers. Under... Antimonide AlInSb Aluminum Indium Antimonide cw constant wave DC direct current GaSb Gallium Antimonide IC Interband cascade InAs Indium Arsenide InSb

  15. Defense Industrial Base Assessment: U.S. Integrated Circuit Design and Fabrication Capability

    Science.gov (United States)

    2009-05-01

    semiconductor alloys including indium antimonide , gallium antimonide , and aluminum antimonide . Three companies operating in the United States, two medium-size...capability diminishes with more exotic materials such as antimonides (7), silicon-on-sapphire (4), and silicon carbide (3). Much of the capability...example, 13 of 49 companies reported design capability for ICs using gallium arsenide material, while three are able to design devices using antimonides

  16. Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer

    Science.gov (United States)

    Rodriguez, J. B.; Cerutti, L.; Patriarche, G.; Largeau, L.; Madiomanana, K.; Tournié, E.

    2017-11-01

    We report on the characterization of GaSb layers grown on silicon substrates using an AlSb nucleation layer. In particular, we investigate the influence of the AlSb layer thickness when this nucleation layer is grown at low temperature (400 °C). X-ray diffraction techniques, atomic force microscopy and transmission electron microscopy were used to characterize the material properties. We demonstrate that there exists a correlation between the micro-twin density, the surface roughness and the broadening of the ω-scan GaSb peaks. Moreover, the AlSb thickness has a strong influence on the micro-twin density, and must be carefully optimized to improve the GaSb quality.

  17. Tracking Sodium-Antimonide Phase Transformations in Sodium-Ion Anodes: Insights from Operando Pair Distribution Function Analysis and Solid-State NMR Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Allan, Phoebe K. [University of Cambridge, University Chemical Laboratory, Lensfield Road, Cambridge, CB2 1EW, U.K.; Gonville and Caius College, Trinity; Griffin, John M. [University of Cambridge, University Chemical Laboratory, Lensfield Road, Cambridge, CB2 1EW, U.K.; Darwiche, Ali [Institut; Réseau sur le Stockage Electrochimique de l’Energie (RS2E), FR CNRS 3459, 80039 Amiens Cedex, France; Borkiewicz, Olaf J. [X-ray; Wiaderek, Kamila M. [X-ray; Chapman, Karena W. [X-ray; Morris, Andrew J. [Theory of; Chupas, Peter J. [X-ray; Monconduit, Laure [Institut; Réseau sur le Stockage Electrochimique de l’Energie (RS2E), FR CNRS 3459, 80039 Amiens Cedex, France; Grey, Clare P. [University of Cambridge, University Chemical Laboratory, Lensfield Road, Cambridge, CB2 1EW, U.K.

    2016-02-15

    Operando pair distribution function (PDF) analysis and ex situ Na-23 magic-angle spinning solid-state nuclear magnetic resonance (MAS ssNMR) spectroscopy are used to gain insight into the alloying mechanism of high-capacity antimony anodes for sodium-ion batteries. Subtraction of the PDF of crystalline NaxSb phases from the total PDF, an approach constrained by chemical phase information gained from Na-23 ssNMR in reference to relevant model compounds, identifies two previously uncharacterized intermediate species formed electro-chemically; a-Na3-xSb (x approximate to 0.4-0.5), a structure locally similar to crystalline Na3Sb (c-Na3Sb) but with significant numbers of sodium vacancies and a limited correlation length, and a-Na1.7Sb, a highly amorphous structure featuring some Sb-Sb bonding. The first sodiation breaks down the crystalline antimony to form first a-Na3-xSb and, finally, crystalline Na3Sb. Desodiation results in the formation of an electrode formed of a composite of crystalline and amorphous antimony networks. We link the different reactivity of these networks to a series of sequential sodiation reactions manifesting as a cascade of processes observed in the electrochemical profile of subsequent cycles. The amorphofis network reacts at higher voltages reforming a-Na1.7Sb, then a-Na3-xSb, whereas lower potentials are required for the sodiation of crystalline antimony, which reacts to form a-Na3-xSb without the formation of a-Na3-xSb. a-Na3-xSb is converted to crystalline Na3Sb at the end of the second discharge. We find no evidence of formation of NaSb. Variable temperature Na-23 NMR experiments reveal significant sodium mobility within c-Na3Sb; this is a possible contributing factor to the excellent rate performance of Sb anodes.

  18. Evaluation of Platinum Silicide and Indium Antimonide as Detector Materials for Space-Based Remote Sensing in the 3.0-to-5.0 Micrometer Wavelength Band

    Science.gov (United States)

    1989-12-01

    Reflectance Alkyd Resin .181 Epoxy Resin .614 Lacquer Resin .615 Nylon Resin .277 Polyurethane Resin .608 Polyvinyl Chloride Resin .921 Titanium Dioxide .108...Atmospheric Propagation of IR Radiation 6 MWIR Characteristics............... Sensors................... Sensitivity........... ... . .. ... 1 Photon...material. x I. Introduction Space-based infrared ( IR ) remote sensing has been in existence for over 29 years - almost from the days following the _irst

  19. Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

    Science.gov (United States)

    2008-07-01

    indium arsenide in the channel, pseudomorphically strained either to aluminum gallium antimonide or indium phosphide, and including certain other...SUMMARY Heterostructure field-effect transistors (HFETs) composed of antimonide -based compound semiconductor (ABCS) materials have in- trinsic performance...was also supported by the Office of Naval Re- search. References [1] B.R. Bennett, R. Magno, J.B. Boos, W. Kruppa, and M.G. Ancona, “ Antimonide -based

  20. Application of an Imaging Fourier-Transform Spectrometer for the Means of Combustion Diagnostics

    Science.gov (United States)

    2012-06-14

    16 InSb Indium Antimonide ...spectra. The Telops MWIR IFTS pairs a Michelson interferometer with a 320x256, Sterling-Cooled Indium Antimonide (InSb) focal plane array (FPA). The...black aluminum in an attempt to provide a uniform background to the scene. The ratio of fuel to air being burned was adjustable and three separate

  1. Micro-Photoluminescence (micro-PL) Study of Core-Shell GaAs/GaAsSb Nanowires Grown by Self-Assisted Molecular Beam Epitaxy

    Science.gov (United States)

    2015-06-18

    ray Spectroscopy FWHM Full width half maxima GaAs Gallium Arsenide GaAsSb Gallium Arsenide Antimonide GaSb Gallium Antimonide IR...used. Two anodized aluminum blades are used having 5/6 slot blade for frequencies up to 400 Hz, and a 25/30 slot blade for frequencies up to 3.7 kHz

  2. H L Bhat

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science. H L Bhat. Articles written in Bulletin of Materials Science. Volume 24 Issue 5 October 2001 pp 445-453 Crystal Growth. Growth and characterization of indium antimonide and gallium antimonide crystals · N K Udayashankar H L Bhat · More Details Abstract Fulltext PDF.

  3. Advanced Space-Based Detectors

    Science.gov (United States)

    2014-07-17

    type InAs/GaSb (GaSb is gallium/ antimonide ) SLS absorber (n) and contacts (n), with an Aluminum /Galium/ Antimonide AlGaSb barrier (B). [10] We...3D – three-dimensional AEOSS – Advanced Electro-Optical Space Sensors AlGaAs – Aluminum /Galium/Arsenide AlGaSb – Aluminum /Galium/ Antimonide CNL...heterojunction between the semiconductor composed of galium and arsenide (GaAs) and one composed of aluminum , galium, and arsenide (AlGaAs). Related

  4. Investigation of Electrical and Optical Properties of Bulk III-V Ternary Semiconductors

    Science.gov (United States)

    2009-03-01

    Time Dependent Annealing Study of Silicon Implanted Aluminum Gallium Nitride,” Master’s Thesis, Air Force Institute of Technology (AU), Wright...Arsenide, Indium Gallium Antimonide , Electrical Characterization, Optical Characterization, Hall Measurements, Mobility, Conductivity, Carrier

  5. Electronics Devices and Materials

    Science.gov (United States)

    2008-03-17

    bonding. The direct bonded wafers will include substrates of silicon, silicon geranium, silicon carbide, gallium arsenide, gallium antimonide and other Il...Acronyms AL ................... Aluminum A LN......... Aluminum Nitride A-Si .................... Silicon AU ..................... Gold CIGS

  6. Development of a Prototype 2 mm Fiber-Coupled Seed Laser for Integration in Lidar Transmitter

    Data.gov (United States)

    National Aeronautics and Space Administration — Optimize the performance of Gallium Antimonide (GaSb)-based 2.05 mm lasers (previously developed under JPL’s Research and Technology Development (R&TD) Program)...

  7. Epitaxial Growth and Electronic Structure of Half Heuslers Co1-xNixTiSb (001), Ni1-xCoxTiSn, and PtLuSb

    Science.gov (United States)

    2016-01-09

    topological compound platinum lutetium antimonide was grown on indium aluminum antimony using molecular beam epitaxy. Integrated and spin polarized...concentrations above 20%. The predicted topological compound platinum lutetium antimonide was grown on indium aluminum antimony using molecular beam epitaxy...valence band alignment between cobalt titanium antimony and indium gallium arsenide and aluminum 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13

  8. Technical Operations Support III (TOPS III). Task Order 0061: Fundamental Theory Based Assessment of Thermoelectric Merit Factor for Heusler Alloys

    Science.gov (United States)

    2010-10-01

    LaAlSi Lanthanum Aluminum Silicide NbFeSb Niobium Ferrous Antimonide QDSLs Quantum Dot Super-Lattices RX Materials RXB Nonmetallic Materials...Energy Cutoff: 450 [a b c]: 6.2 Bandgap: 0.18 eV K-Points: 17576 Maximum zT: 0.7 around 200K Atoms: 2 Niobium Ferrous Antimonide (NbFeSb) Experimental

  9. Self-Catalyzed Growth of Axial GaAs/GaAsSb Nanowires by Molecular Beam Epitaxy for Photodetectors

    Science.gov (United States)

    2015-06-01

    spectroscopy et al. Et al. FWHM Full width half maxima GaAs Gallium arsenide GaAsSb Gallium arsenide antimonide HRXRD High...MOVPE Metal organic vapor phase epitaxy NCA Nano Channel Aluminum NW Nanowire PL Photoluminescence PMMA Poly methyl methacrylate...B.M. and L.-E. Wernersson, Synthesis and properties of antimonide nanowires. Nanotechnology, 2013. 24(20): p. 202001. 11. Hadfield, R.H., et al

  10. An Engineering Trade Space Analysis for a Space-Based Hyperspectral Chromotomographic Scanner

    Science.gov (United States)

    2009-03-26

    indium antimonide (InSb) or mercury cadmium telluride (HgCdTe) based FPAs. Obviously multiple FPAs or very large FPAs will in turn drive costs, complexity...different detector materials, silicon for visible light, gallium arsenide for NIR and indium antimonide for short wave infrared (SWIR). The instrument...same material, aluminum , to minimize the possibility of induced internal structural stress from variations in material coefficients of thermal

  11. An Infrared Camera Simulation for Estimating Spatial Temperature Profiles and Signal-to-Noise Ratios of an Airborne Laser-Illuminated Target

    Science.gov (United States)

    2007-06-01

    27 3.1. Reflectance data for the bare aluminum surface. . . . . . . . . . . . . 35 3.2. HEL-induced missile body temperatures...23 I-V Current-Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 InSb Indium Antimonide ...complex Figure 2.8: Quantum efficiency for InSb at 300K. index-of-refraction data for indium antimonide (InSb) at 300 K [18:495]. Complex index-of

  12. Ceramic Nanofibers by Electrospinning of Precursor Polymers

    Science.gov (United States)

    2008-07-29

    antimony n-butoxide to form aluminum antimonide , and indium methoxyethoxide and antimony n- butoxide to form indium antimonide and a variety of nitride...reactivity towards metal oxides. Additionally, residual aluminum chloride catalyst may increase the reactivity. In the gas phase, the carbonizing...currently in the possession of our lab, such as tetraethyl orthosilicate and tetraethxoxygermane to form silicon germanide, aluminum n-butoxide and

  13. Metal-Semiconductor Nanocomposites for High Efficiency Thermoelectric Power Generation

    Science.gov (United States)

    2013-12-07

    will be able to measure the thermoelectric properties on these p-type antimonide thermoelectric materials up to a higher temperature therefore a...energy-dependent carrier scattering without the inherent disadvantages of aluminum containing materials. In previous years of the program...DOE and from NASA in order to commercialize their antimonide MOCVD reactor. Structured Material Industries, Inc. grew all of the rare-earth InGaSb

  14. Optoelectronic Information Processing

    Science.gov (United States)

    2012-03-07

    R. Huffman, Absorption and Scattering of Light by Small Particles, Wiley, New York 1983  Light focusing by a 20 nm  Aluminum particle...LEDs: Technology Accumulation and Transfer Materials, devices, circuits, architecture: STTR (2002 – 2006) – antimonide and arsenide gain media...J. Hesler Waveguide circuits Photonic crystal WG Horn antennas Microfuidic channels Antimonide superlattices AlGaAs QCL EL Room T End facet

  15. Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET

    Science.gov (United States)

    2011-10-01

    achieved. This enabled pMOSFETs with a peak hole mobility value of 290 cm2/Vs. 15. SUBJECT TERMS Atomic layer deposition (ALD), gallium antimonide , hole...drain technology with high density of activated carriers, low defects, and low contact resistance. Ion implantation in antimonides has traditionally been...clean, Al2O3 was deposited at 300 ◦C by ALD using trimethyl aluminum (TMA) and water as the precursors with TMA being the starting pulse for the ALD

  16. Exploration of Integrated Visible to Near-, Shortwave-, and Longwave-Infrared (Full-Range) Spectral Analysis

    Science.gov (United States)

    2014-09-01

    Imager IARR Internal Average Relative Reflectance IGM Input Geometry File InGaAs Indium Gallium Arsenide InSb Indium Antimonide ISAC In-Scene...indium antimonide (InSb) and mercury cadmium telluride (HgCdTe). A temperature controlled laser diode provides the reference for the servo and sampling...made #17 has a minimum near 0.39 micrometers and a peak near 0.42 micrometers, similar to spectra of white painted materials (painted aluminum in

  17. Computing the Effects of Strain on Electronic States: A Survey of Methods and Issues

    Science.gov (United States)

    2012-12-01

    covered in this report. In section 6, we show computed comparisons of the different methods using models of GaAs, InAs, and aluminum arsenide (AlAs...constants called the Luttinger parameters. Kane (83) studied the band structure of indium antimonide (InSb), whose electronic band structure resembles...Band Structure of Indium Antimonide . J. of Phys. and Chem. of Solids 1957, 1, 249–261. 84. Vurgaftman, I. J.; Meyer, R.; Ram-Mohan, L. R. Band

  18. Generation of Mid-Wave Infrared Signature Using Microradiating Devices for Vehicle Mounted Identification Friend or Foe Applications

    Science.gov (United States)

    2009-06-01

    Silicon Si 1.11 Germanium Ge 0.67 Silicon carbide SiC 2.86 Aluminum antimonide AlSb 1.6 Gallium(III) phosphide GaP 2.26 Gallium(III) arsenide...GaAs 1.43 Gallium(III) nitride GaN 3.4 Gallium antimonide GaSb 0.7 Indium(III) nitride InN 0.7 Indium(III) phosphide InP 1.35 Indium(III) arsenide...when operated at maximum recommended power. Indium-gallium arsenide (InGaAs) and Indium arsenide- antimonide (InAsSb) hetrostructures are the

  19. Growth and performance of superlattice-based long wavelength complementary barrier infrared detectors (CBIRDs)

    Science.gov (United States)

    Hill, Cory J.; Soibel, Alexander; Keo, Sam A.; Lee, Michael C.; Mumolo, Jason M.; Nguyen, Jean; Rafol, B., Sir; Ting, David Z.; Yang, Baohua; Gunapala, Sarath D.

    2010-04-01

    We have demonstrated the use of bulk antimonide based materials and type-II antimonide based superlattices in the development large area long wavelength infrared (LWIR) focal plane arrays (FPAs). Barrier infrared photodetectors (BIRDS) and superlattice-based infrared photodetectors are expected to outperform traditional III-V MWIR and LWIR imaging technologies and are expected to offer significant advantages over II-VI material based FPAs. Our group has developed a novel complementary barrier infrared detector (CBIRD) which utilizes properties unique to the antimonide material system to incorporate unipolar barriers on either side of a superlattice absorber region. We have used molecular beam epitaxy (MBE) technology to grow InAs/GaSb CBIRD structures on large area 100mm GaSb substrates with excellent results. Furthermore, we have fabricated initial 1024x1024 pixels superlattice imaging FPAs based on the CBIRD concept.

  20. On the local injection of emitted electrons into micrograins on the surface of A{sup III}–B{sup V} semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, N. D., E-mail: ndzhukov@rambler.ru; Glukhovskoi, E. G.; Khazanov, A. A. [Saratov State University (Russian Federation)

    2016-06-15

    The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current mechanisms are established and their parameters are determined by comparing the experimental I–V characteristics and those calculated from formulas of current transport. The effect of limitation of the current into the micrograins of indium antimonide and indium arsenide which manifests itself at injection levels exceeding a certain critical value, e.g., 6 × 10{sup 16} cm{sup –3} for indium antimonide and 4 × 10{sup 17} cm{sup –3} for indium arsenide, is discovered. A physical model, i.e., the localization of electrons in the surface area of a micrograin due to their Coulomb interaction, is proposed.

  1. Scaling of an Optically Pumped Mid-Infrared Rubidium Laser

    Science.gov (United States)

    2015-03-26

    ns pulsed, 1 MW/cm2 Continuum neodymium-doped yttrium aluminum garnet (Nd:YAG) laser to pump at 1.06 µm. The wavelength was decreased to 355 nm by...characterize the mid-IR rubidium laser, the calibration scheme of the indium- antimonide (InSb) detector, and the setup of the cw experiments...Richards’ experiment, the separated IR beam was then incident on a liquid nitrogen cooled indium antimonide (InSb) detector (Richards, 2013:11). As

  2. Effect of an in situ Hydrogen Plasma Pre-treatment on the Reduction of GaSb Native oxides Prior to Atomic Layer Deposition

    Science.gov (United States)

    2013-04-12

    hydrogen plasma exposure, Applied Physics Letters 101 (2012). [2] B.R. Bennett, R. Magno, J.B. Boos, W. Kruppa, M.G. Ancona, Antimonide -based...capacitance in arsenide– antimonide quantum-well MOSFETS incorporating nonparabolicity effect, IEEE Transactions on Electron Devices 58 (2011) 1397–1403. [8...E.Y. Chang, Y.-Y. Wong, C.-C. Yu, C.-Y. Chang, Y.-C. Lin, H.-Q. Nguyen, B.-T. Tran, Effects of wet chemical and trimethyl aluminum treatments on the

  3. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  4. Microwave-Driven Coherent Operation of a Semiconductor Quantum Dot Charge Qubit

    Science.gov (United States)

    2015-02-16

    Si/SiGe heterostructure . All authors contributed to the preparation of the manuscript. Additional Information Supplementary information accompanies...Science 318, 1430–1433 (2007). [21] van den Berg, J. W. G. et al. Fast spin-orbit qubit in an indium antimonide nanowire . Phys. Rev. Lett. 110, 066806

  5. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Many antimonide (Sb) crystals of 8 mm to 18 mm diameter were grown by optimized growth parameters. The forced convection and absence of conducting support to ampoule showed improvement in crystal quality of as grown ingots. Crystals showed preferred orientation and self-seeding. Results on interface shape and ...

  6. Impact ionization in Ga/1-x/Al/x/Sb - An alternative interpretation

    Science.gov (United States)

    Kasemset, D.

    1981-01-01

    The existence of the recently proposed resonance impact ionization process in gallium aluminum antimonide is questioned. An alternative interpretation of the data originally used to support the claim for a resonant process is presented which invokes only conventional, well-established processes.

  7. Nondestructive Electromagnetic Characterization of Uniaxial Materials

    Science.gov (United States)

    2014-09-18

    be classified 6 as MNG. Pure ferromagnetic metals (for example, nickel) and even some semi-conductors (Indium Antimonide , Chalcopyrite, etc.) could...Analyzer (VNA). The clamped waveguide configuration consisted of 6” x 6” x 0.250” aluminum flanges attached using precision alignment pins and securing

  8. Non-Destructive Evaluation of Aircraft Structural Components and Composite Materials at DSTO Using Sonic Thermography

    Science.gov (United States)

    2011-02-01

    256 Indium Antimonide (InSb) detector elements with a sensitivity of 20 mK in the operating wavelength band of 3-5 µm. The detectors are operated in...DSTO RESEARCH LIBRARY THESAURUS Nondestructive tests, thermography, fatigue tests, crack propagation, Aluminum alloys, acoustics 19. ABSTRACT This

  9. Spectral and Spatial Coherent Emission of Thermal Radiation from Metal-Semiconductor Nanostructures

    Science.gov (United States)

    2012-03-01

    silver (Ag), gold (Au), sodium (Na), copper (Cu), potassium (K), and aluminum (Al). From [56...Dielectric Constant 2 Imaginary Part of Complex Dielectric Constant ® Registered Trademark Ag Silver Al Aluminum Au Gold C Celsius...High Impulse Power Magnetron Sputtering InSb Indium Antimonide IR-VASE Infrared Variable Angle Spectroscopic Ellipsometer MCF Material

  10. InxGa1-xSb Channel p-Metal-Oxide-Semiconductor Field Effect Transistors: Effect of Strain and Heterostructure Design

    Science.gov (United States)

    2011-07-06

    good gate dielectric that will minimize the leakage current while having a low density of interface states (Dit), is direly needed for the antimonides ...dielectric, followed by evaporation and patterning of the aluminum gate material. This was followed by ion implanta- tion of beryllium, which acts as

  11. Self-defense of Large Aircraft

    Science.gov (United States)

    2008-03-01

    quadrant Stinger Block II Any quarter3-5 μm IR-UV Indium antimonide 2nd Generation Reticle chopping seekers (gyro and mirror spins) Stinger, SA-14, SA...larger. For an optimized usage of chaff, the important factors are: • Chaff type ( aluminum -coated glass chaff are more commonly used) • Chaff length

  12. Chemical Analyzer for In Situ and Real Time Surface Monitoring for Composition Control During Synthesis of Compound Semiconductor Films

    Science.gov (United States)

    2014-04-24

    system and calibrate AP. Some excerpted examples: Indium Gallium Aluminum Energy Calibration 20 40 60 80 100 2.0 2.5 3.0...does not interfere with the MBE process and does not affect structural/optical quality of the antimonide -based photonic heterostructures. -7000

  13. Quantum Efficiency as a Function of Temperature in Metal Photocathodes

    Science.gov (United States)

    2013-06-01

    Temperature monitoring programs. .................................................... 21  Figure 12.  Laser system in aluminum enclosure... antimonides and alkali tellurides, are the primary electron sources for many accelerators, and they are now in operation at the Thomas Jefferson National... aluminum enclosure, which surrounded the high- voltage end of the test stand as well as the laser head, to protect us not only from the hazard of UV

  14. Conceptual Modeling of a Quantum Key Distribution Simulation Framework Using the Discrete Event System Specification

    Science.gov (United States)

    2014-09-18

    Arsenide (InGaAs) Low High Speed 800 - 1800 nm Moderate Indium Arsenide Antimonide (InAsSb) High Low Speed 1000 - 5800 nm High Extended Range Indium...yttrium aluminum garnet, gadolinium gallium garnet, yttrium lithium fluoride, transition-metal and lanthanide- metal ions; (gas): helium-neon, argon

  15. First-Principles Study of Defects in GaN, AlN and Their Alloys

    Science.gov (United States)

    2010-08-31

    defines the ionization energy. -12- Interstitial aluminum and aluminum vacancy pairs (Ali-VAl) in AlN In the previous program, we have...Following the general trends between phosphides, arsenides, and antimonides ,22 we expect the VBM of Zn3Sb2 to lie at least as high as that of Zn3P2

  16. Upconversion imager measures single mid-IR photons

    DEFF Research Database (Denmark)

    Dam, Jeppe Seidelin; Tidemand-Lichtenberg, Peter; Pedersen, Christian

    2013-01-01

    The most sensitive IR detectors today are based on exotic semicoductor technology such as indium antimonide or mercury cadmium telluride. High quality detectors of these sorts are expensive and suffer from high dark currents. Dark current can be somewhat alleviated by extreme cooling. Comparing t...

  17. Ab initio study of GaSb(001)-c(2 x 10) and (2 x 10) reconstructions

    Czech Academy of Sciences Publication Activity Database

    Romanyuk, Olexandr; Braun, W.; Grosse, F.

    2009-01-01

    Roč. 7, - (2009), 429-431 ISSN 1348-0391 Institutional research plan: CEZ:AV0Z10100521 Keywords : density functional calculations * surface energy * surface relaxation and reconstruction * gallium antimonide * semiconducting surfaces Subject RIV: BM - Solid Matter Physics ; Magnetism

  18. Untitled

    Indian Academy of Sciences (India)

    Irradiation induced defects. Characterization of vacancy-like defects in III-V compound semiconductors using positron anni- hilation technique 89. Isoelectronic doping. Bulk growth of gallium antimonide crystals by. Bridgman method 27. Kinetic model. Electrodeposition kinetics of gallium arsenide 43. Laminated composites.

  19. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Al–Sb bilayer thin films having various thicknesses were deposited by thermal evaporation on ITO-coated conducting glass substrates at a pressure of 10-5 torr. These films were irradiated by Ag12+ heavy ions of energy, 160 MeV, with a fluence of 2.2 × 1013 ions/cm2, to get aluminum antimonide semiconductor.

  20. Influence of crystal–melt interface shape on self-seeding and single ...

    Indian Academy of Sciences (India)

    Many antimonide (Sb) crystals of 8 mm to 18 mm diameter were grown by optimized growth parameters. The forced convection and absence of conducting support to ampoule showed improvement in crystal quality of as grown ingots. Crystals showed preferred orientation and self-seeding. Results on interface shape and ...

  1. Theoretical study of the transverse acoustic phonons of GaSb at ...

    Indian Academy of Sciences (India)

    Gallium antimonide (GaSb), like many III–V semiconductor compounds crystallizes in the cubic zinc-blende crystal ... and a structural phase transition to a high coordination phase appears. For GaSb the phase ... the changes in different phonon modes due to the change in the interatomic forces after the applications of ...

  2. Optical, electrical and thermoelectric power studies of Al–Sb thin film ...

    Indian Academy of Sciences (India)

    Unknown

    been made to study the bilayer diffusion properties of Al–. Sb thin films. In the present communication, RBS analysis, optical, electrical and thermoelectric power studies of Al–. Sb bilayer structure of thin films prepared by thermal co- evaporation technique is reported. 2. Experimental. Aluminium antimonide films were ...

  3. The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

    Science.gov (United States)

    Steel, G. G.

    1970-01-01

    Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

  4. Nanoscale semiconductor hybrids: fundamental physics and advanced devices

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Binh-Minh [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2014-04-09

    Key summary: Low dimensional hybrids: more flexibility and better controllability of materials properties. Type-II Antimonide-based superlattice: system of interacting quantum wells, for infrared detection and imaging. Hetero-designs in core/multi-shell nanowires: promising candidate for high performance electronic and sensing applications. An interdisciplinary research plan could trigger interest and collaboration within RIT.

  5. Influence of crystal–melt interface shape on self-seeding and single ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. The growth of Sb-based crystals (InSb, GaSb etc) was undertaken using resistive heater furnace by vertical directional solidification (VDS) technique. Crystal–melt interface shape during the growth was shown to convert from concave to convex along the crystal axis of the ingots. Many antimonide (Sb) crystals of 8 ...

  6. Monotectic and syntectic alloys. Experiment MA-044

    Science.gov (United States)

    Lacy, L. L.; Aug, C. Y.

    1977-01-01

    The flight test furnace run of the monotectic and syntectic alloys experiment was successfully performed during the Apollo-Soyuz Test Project mission in July 1975. Examination of the returned sample cartridges and the formal comparative characterization of the low-g and one-g processed samples of lead-zinc and aluminum antimonide were completed. The results for aluminum antimonide show that polycrystalline and multiphased material can be homogenize in space under low-g conditions. Microstructural study on the lead-zinc flight samples shows that complete interdiffusion of lead and zinc had not been achieved, even though the flight data indicated a soak temperature in the miscible region that was 40 K above the published consolute temperature.

  7. Monotectic and syntectic alloys: ASTP experiment MA-044

    Science.gov (United States)

    Ang, C. Y.; Lacy, L. L.

    1975-01-01

    A postflight preliminary technical evaluation is presented of the returned samples of aluminum antimonide (AlSb) syntectic compound and lead-zinc (PbZn) monotectic immiscible processed during the Apollo-Soyuz Test Project (ASTP) mission. The returned cartridges, extracted ampoules, and removed samples were examined in detail. A genesis of the experiment is given along with a summary of the efforts and various scheduled tests up to the ASTP mission. A tentative characterization plan is developed from the postflight preliminary examination which makes use of the limited number of available samples and is based on the initial observations. It is indicated that a higher degree of compositional homogeneity in aluminum antimonide was achieved under flight test conditions.

  8. High brightness electron sources

    Energy Technology Data Exchange (ETDEWEB)

    Sheffield, R.L.

    1995-07-01

    High energy physics accelerators and free electron lasers put increased demands on the electron beam sources. This paper describes the present research on attaining intense bright electron beams using photoinjectors. Recent results from the experimental programs will be given. The performance advantages and difficulties presently faced by researchers will be discussed, and the following topics will be covered. Progress has been made in photocathode materials, both in lifetime and quantum efficiency. Cesium telluride has demonstrated significantly longer lifetimes than cesium antimonide at 10{sup {minus}8} torr. However, the laser system is more difficult because cesium telluride requires quadrupled YLF instead of the doubled YLF required for cesium antimonide. The difficulty in using photoinjectors is primarily the drive laser, in particular the amplitude stability. Finally, emittance measurements of photoinjector systems can be complicated by the non-thermal nature of the electron beam. An example of the difficulty in measuring beam emittance is given.

  9. Thermodynamic properties of indium-antimony alloys

    International Nuclear Information System (INIS)

    Gerasimov, Ya.I.; Goryacheva, V.I.; Gejderikh, V.A.

    1988-01-01

    Method of electromotive forces is used to obtain thermodynamic parameters of reaction of In x Sb (1-x) phase formation from liquid indium and solid indium mono-antimonide. For alloy compositions with x=0.75-0.55 liquidus coordinates on phase diagram are determined. Nonmonotonous dependence of partial entropy and enthalpy of indium on composition of liquid alloys, that is connected with ordering, is detected. 20 refs.; 2 figs.; 2 tabs

  10. High sensitivity 1.06 micron optical receiver for precision laser range finding. [YAG laser design

    Science.gov (United States)

    Scholl, F. W.; Harris, J. S., Jr.

    1977-01-01

    Aluminum gallium antimonide avalanche photodiodes with average gain of 10, internal quantum efficiency of greater than 60%, capacitance less than 0.2pf, and dark current of less than 1 micron were designed and fabricated for use in a low noise optical receiver suitable for 2 cm accuracy rangefinding. Topics covered include: (1) design of suitable photodetector structures; (2) epitaxial growth of AlGaSb devices; (3) fabrication of photodetectors; and (4) electro-optics characterization.

  11. Characterization of Active Cooling and Flow Distribution in Microvascular Polymers

    Science.gov (United States)

    2010-08-01

    256 array of Indium Antimonide infrared detectors yielding a spatial resolu- tion of 110 mm within the field of view. Data was recorded at one frame...set up utilized the Watlow resistive heater (previously described) to heat an aluminum plate, while a thin specimen of epoxy (3.01mm thick and...57.5mm in diameter) was sand- wiched between the heated plate and another identical aluminum plate. The temperatures of the plates were measured using J

  12. Quantum Enhanced Imaging by Entangled States

    Science.gov (United States)

    2009-07-01

    semiconductor) AlSb: Aluminum Antimonide (a III-V compound semiconductor) APD: Avalanche Photo Diode AR: Anti-Reflection ARL: Army Research...92, 233601 (2004). 72 Y. Zhou, P. Xu, et al., (in preparation). 76 List of Acronyms AlInAs: Aluminum Indium Arsenide (a III-V compound...Photon Absorption FFT: Fast Fourier Transform FPA: Focal Plane Array (an optical detector) GaAlAs: Gallium Aluminum Arsenide (a III-V compound

  13. MIT Lincoln Laboratory Annual Report 2013

    Science.gov (United States)

    2013-01-01

    active plasmonics for fast nonmechanical scanning. The optical materials effort targets the application of aluminum as a plasmonic metal, enabling large...presentation in spring 2013, they showcased this functional system that produces electricity and heat from an aluminum energy source. sPOTLIghT MIT...Dr. George W. Turner, for “pioneering and sustained contributions in antimonide materials research and mid-wavelength infrared laser development

  14. Implementation of DoD ManTech Projects Receiving FY03-05 Funds

    Science.gov (United States)

    2008-12-01

    26 3.2.2 Low-Cost Friction Stir Welding of Aluminum for LCS Applications...welding of aluminum and titanium; weld distortion, accuracy and process control; and a new ultra-light welding system. A single-melt process for...scale Indium Antimonide (InSb) wafers with reduced cluster defects and transitioned them into the F-35 Infrared Detector System. This project lowered

  15. Device Quality Sb-Based Compound Semiconductor Surface: A Comparative Study of Chemical Cleaning

    Science.gov (United States)

    2011-01-01

    easily tuned from 0.18 eV for InSb to 0.72 eV for GaSb (direct bandgap) and 1.4 eV for AlSb (indirect bandgap). By combining these antimonide binaries...sample with the HCl clean, which was found to be most effective in the removing the GaOx and SbOx ox- ide on the surface. The aluminum on the surface

  16. Record Pulsed Power Demonstration of a 2 micron GaSb-Based Optically Pumped Semiconductor Laser Grown Lattice-Mismatched on an AlAs/GaAs Bragg Mirror and Substrate (Postprint)

    Science.gov (United States)

    2009-09-01

    when pumped with a pulsed 1064 nm neodymium doped yttrium aluminum garnet laser. 15. SUBJECT TERMS lasers, semiconductor 16. SECURITY...pulsed 1064 nm neodymium doped yttrium aluminum garnet laser. © 2009 American Institute of Physics. DOI: 10.1063/1.3212891 Optically pumped...AlGaAs/GaAs DBR and GaAs substrate but to grow an antimonide RPG stack con- sisting of InGaSb quantum wells embedded in AlGaSb bar- riers on the latter

  17. High-Performance Manufacturing Technology Research and Development Pilot Program for Fiscal Year 2006

    Science.gov (United States)

    2008-05-01

    with its two contractors to successfully manufacture and implement lower cost, larger-scale Indium Antimonide (InSb) wafers with reduced cluster...that range from aluminum , to thin sheet metal to armor plating. NCDMM specially designed Mobile Drilling Kits for general drilling operations on...developed a radiographic reference image standard for use with digital images of aluminum castings. The lead time and economic benefits of digital

  18. Development of a Spectropolarimetric Remote Sensing Capability

    Science.gov (United States)

    2013-03-01

    The Fourier-transform spectrometer (FTS) covers the near- and mid-infrared (0.9-5.5 µm) using Indium Antimonide (InSb, 1800-12000 cm -1 ) and...grade Aluminum mirror at incident angles between 20-70 deg. Both smooth and roughened Pyrex were studied, and surface roughness was characterized...Spectropolarimetric methodology and FTIR measurements of aluminum and glass ............... 51 Introduction

  19. Determining the Presence of Ordering in Ternary Semiconductor Alloys Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    2013-01-01

    as a simple measurement of film quality. 2. Motivation and Army Interest One common example of ordering seen in many semiconductor alloys is copper ...ARL U.S. Army Research Laboratory CuPt copper platinum Ga gallium GaInP gallium indium phosphide GaSb gallium antimonide HgCdTe mercury...RECORDS MGMT ATTN RDRL CIO LL TECHL LIB ATTN RDRL SEE I W SARNEY ADELPHI MD 20783-1197 TOTAL: 7 (1 ELEC, 6 HCS)

  20. Midwave Infrared Imaging Fourier Transform Spectrometry of Combustion Plumes

    Science.gov (United States)

    2009-09-01

    interferometer, and a personal computer (PC) with monitor [66]. Two stepper motors are used to position the scanning mirror. Mirror control, data...1. It has a Stirling -cooled InSb (Indium Antimonide) focal plane array (FPA) that consists of 320x256 pixels. The spatial extent of the scene can be...expected to remove or significantly decrease the effects of several sources of instrument noise associated with the FPA and Stirling cooler. Included in

  1. Structural, elastic, electronic and optical properties of bi-alkali ...

    Indian Academy of Sciences (India)

    The structural parameters, elastic constants, electronic and optical properties of the bi-alkali antimonides (Na 2 KSb, Na 2 RbSb, Na 2 CsSb, K 2 RbSb, K 2 CsSb and Rb 2 CsSb) were calculated using state-of-the-art density functional theory. Different exchange-correlation potentials were adopted to predict the physical ...

  2. Manhattan Project Technical Series The Chemistry of Uranium (I) Chapters 1-10

    Energy Technology Data Exchange (ETDEWEB)

    Rabinowitch, E. I. [Argonne National Laboratory (ANL), Argonne, IL (United States); Katz, J. J. [Argonne National Laboratory (ANL), Argonne, IL (United States)

    1946-09-30

    This constitutes Chapters 1 through 10. inclusive, of The Survey Volume on Uranium Chemistry prepared for the Manhattan Project Technical Series. Chapters are titled: Nuclear Properties of Uranium; Properties of the Uranium Atom; Uranium in Nature; Extraction of Uranium from Ores and Preparation of Uranium Metal; Physical Properties of Uranium Metal; Chemical Properties of Uranium Metal; Intermetallic Compounds and Alloy systems of Uranium; the Uranium-Hydrogen System; Uranium Borides, Carbides, and Silicides; Uranium Nitrides, Phosphides, Arsenides, and Antimonides.

  3. Structural, elastic, electronic and optical properties of bi-alkali ...

    Indian Academy of Sciences (India)

    The structural parameters, elastic constants, electronic and optical properties of the bi-alkali antimonides (Na2KSb, Na2RbSb, Na2CsSb, K2RbSb, K2CsSb and Rb2CsSb) were calculated using state-of-the-art density functional theory. Different exchange-correlation potentials were adopted to predict the physical properties.

  4. X-ray photoelectron spectroscopic study of PuSb

    International Nuclear Information System (INIS)

    Baptist, R.; Chayrouse, J.; Courteix, D.; Heintz, L.; Damien, D.; Wojakowski, A.

    1983-01-01

    After presenting photoemission results for two uranium monopnictides, uranium nitride and antimonide, we present and analyse the X-ray photoemission spectroscopy results for PuSb. The increase of the 5f electron localization along the uranium monopnictides series is also observed when going from USb to PuSb. In this last case, the localization is due to an increase of the 5f intra-atomic Coulomb interaction in plutonium atoms compared to that in the uranium atoms [fr

  5. Manhattan Project Technical Series The Chemistry of Uranium (I) Chapters 1-10

    International Nuclear Information System (INIS)

    Rabinowitch, E. I.; Katz, J. J.

    1946-01-01

    This constitutes Chapters 1 through 10. inclusive, of The Survey Volume on Uranium Chemistry prepared for the Manhattan Project Technical Series. Chapters are titled: Nuclear Properties of Uranium; Properties of the Uranium Atom; Uranium in Nature; Extraction of Uranium from Ores and Preparation of Uranium Metal; Physical Properties of Uranium Metal; Chemical Properties of Uranium Metal; Intermetallic Compounds and Alloy systems of Uranium; the Uranium-Hydrogen System; Uranium Borides, Carbides, and Silicides; Uranium Nitrides, Phosphides, Arsenides, and Antimonides.

  6. Nanoscale electrocrystallisation of Sb and the compound semiconductor AlSb from an ionic liquid.

    Science.gov (United States)

    Aravinda, C L; Freyland, W

    2006-04-28

    Aluminium antimonide nanoclusters with an apparent band gap energy of 0.92 +/- 0.2 eV have been electrodeposited from the neutral ionic melt AlCl3-1-butyl-3-methylimidazolium chloride {AlCl3-[C4mim]+Cl-} at room temperature and have been characterized in-situ by electrochemical scanning tunneling microscopy (STM) and spectroscopy (STS).

  7. Structural, elastic, electronic and optical properties of bi-alkali

    Indian Academy of Sciences (India)

    The structural parameters, elastic constants, electronic and optical properties of the bi-alkali antimonides (Na 2 KSb, Na 2 RbSb, Na 2 CsSb, K 2 RbSb, K 2 CsSb and Rb 2 CsSb) were calculated using state-of-the-art density functional theory. Different exchange-correlation potentials were adopted to predict the physical ...

  8. Synthesis and thermoelectric properties of Sb{sub 0.20}CoSb{sub 2.80} skutterudite

    Energy Technology Data Exchange (ETDEWEB)

    Figueirêdo, C.A., E-mail: camila_fig@hotmail.com [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Gallas, M.R. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Institute for Multiscale Simulations, Friedrich-Alexander-Universität, Nägelsbachstrasse 49b, 91052 Erlangen (Germany); Zorzi, J.E. [Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil); Perottoni, C.A. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil)

    2014-06-15

    Highlights: • A HP-HT Sb{sub 0.20}CoSb{sub 2.80} phase was prepared by processing cobalt antimonide at 7.7 GPa and 550 °C, for (at least) 5 min. • The mechanism of formation of this phase involves (i) decomposition of cobalt antimonide into CoSb{sub 2} and Sb, and (ii) insertion of Sb into the remaining cobalt antimonide. • The mechanism of formation is qualitatively different from that responsible for the formation of the high pressure (greater than 20 GPa) phase. - Abstract: Polycrystalline samples of cobalt antimonide (CoSb{sub 2.79}) were submitted to different conditions of pressure, temperature and processing time, in a high-pressure toroidal-type chamber, aiming to maximize the production of the high pressure phase previously observed in experiments with a diamond anvil cell. Rietveld refinements of X-ray powder diffraction data were performed to determine the phase composition and structural parameters. The maximum yield, 89(2) wt.% of Sb{sub x}CoSb{sub 3−x} phase, was obtained at 7.7 GPa, 550 °C and (at least) 5 min of processing time. The mechanism behind the formation of Sb{sub x}CoSb{sub 3−x} at high pressure and high temperature is actually not the same as that previously inferred from experiments at higher pressures (20 GPa) and room temperature with the diamond anvil cell. Indeed, evidences suggest that, at high pressure and high temperature, Sb{sub x}CoSb{sub 3−x} is formed by insertion of Sb resulting from decomposition of cobalt antimonide. Thermal conductivity, Seebeck coefficient and electrical conductivity were estimated for CoSb{sub 2.79} and Sb{sub 0.20}CoSb{sub 2.80}. The thermoelectric figure of merit at room temperature for Sb{sub 0.20}CoSb{sub 2.80} resulted 33% greater than that for CoSb{sub 2.79}.

  9. Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

    Energy Technology Data Exchange (ETDEWEB)

    Sherohman, John W [Livermore, CA; Coombs, III, Arthur W. (Patterson, CA); Yee, Jick Hong [Livermore, CA; Wu, Kuang Jen J [Cupertino, CA

    2007-05-29

    For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.

  10. Quantenkaskadenlaser

    OpenAIRE

    Dekorsy, T.; Helm, M.; Georgiev, N.; Kuenzel, H.

    2005-01-01

    EP 1536531 A UPAB: 20050818 NOVELTY - A quantum cascade laser has an emission wavelength below 3.4 mu m and above 1.5 mu m. The semiconductor multi-layer structure has a cup layer of indium gallium arsenide (InGaAs) and a barrier layer of aluminum arsenic antimonide (AlAsSb). The cup layer thickness is in the optically active range of 1 to 4 nm. USE - Quantum cascade laser. ADVANTAGE - The laser extends the range within which the quantum cascade laser may operate.

  11. A Tutorial on Electro-Optical/Infrared (EO/IR) Theory and Systems

    Science.gov (United States)

    2013-01-01

    called III-V superlattices that use alternating layers such as aluminum gallium arsenide and gallium arsenide (AlGaAs/GaAs) and that allow one to change...arsenide (GaAs) and aluminum gallium arsenide (AlGaAs). For these compounds, the spectral cut-off wavelength is changed by altering the layer...Lockheed Martin’s Hawkeye system. This system is gimbaled and includes an indium antimonide (InSb) MWIR FLIR. The super-resolution algorithms result in

  12. Standards and Procedures for Application of Radiometric Sensors

    Science.gov (United States)

    2010-07-01

    anti-reflection. If the optical components are reflective, note the reflective material (such as aluminum or gold) and any coating material...are defined for different materials in Reference 8b and are typically for a certain wavelength range and temperature. For the indium antimonide (InSb...Condition 0.6 um* Solar 1.8 um* 1371 o C 3.6 um* 538 o C 5.4 um* 260 o C 9.3 um* 38 o C Aluminum Polished Oxidized Anodized at 1000

  13. Imaging and Reflectance Spectroscopy for the Evaluation of Effective Camouflage in the SWIR

    Science.gov (United States)

    2007-12-01

    44 Figure 32. 250x magnification (left) and 2500x magnification (right) of an aluminum mesh with 2 µm mesh spacing...Devices (NVD), which have a spectral response out to 0.9 µm, do not detect either the 1.06 or 1.55 µm targeting lasers. Indium Antimonide (InSb...can show that in the case of visible light incident on a mesh made up of aluminum mesh, the reflectance of a mesh would be primarily a function of

  14. Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications

    Science.gov (United States)

    Addamane, S. J.; Mansoori, A.; Renteria, E. J.; Dawson, N.; Shima, D. M.; Rotter, T. J.; Hains, C. P.; Dawson, L. R.; Balakrishnan, G.

    2016-04-01

    Sb-based metamorphic DBR membranes are developed for InP-based vertical cavity laser applications. The reflectivity of the metamorphic DBR membrane is compared to the reflectivity of a lattice-matched DBR to characterize the optical quality of the DBR membrane. The metamorphic interface between InP and the III-antimonides is found to degrade the reflectivity of the DBR. Therefore, the growth temperature for the metamorphic DBR is optimized in order to obtain highly reflective (>99.8%) III-Sb thin-film membranes.

  15. Infrared detectors and arrays; Proceedings of the Meeting, Orlando, FL, Apr. 6, 7, 1988

    International Nuclear Information System (INIS)

    Dereniak, E.L.

    1988-01-01

    The papers contained in this volume provide an overview of recent advances in theoretical and experimental research related to IR detector materials and arrays. The major subject areas covered include IR Schottky barrier silicide arrays, HdCdTe developments, SPRITE technology, superlattice or bandgap-engineered devices, extrinsic silicon technology, indium antimonide technology, and pyroelectric arrays. Papers are presented on time division multiplexed time delay integration, spatial noise in staring IR focal plane arrays, pyroelectrics in a harsh environment, and testing of focal plane arrays

  16. Mid-infrared tunable metamaterials

    Science.gov (United States)

    Brener, Igal; Miao, Xiaoyu; Shaner, Eric A; Passmore, Brandon Scott; Jun, Young Chul

    2015-04-28

    A mid-infrared tunable metamaterial comprises an array of resonators on a semiconductor substrate having a large dependence of dielectric function on carrier concentration and a semiconductor plasma resonance that lies below the operating range, such as indium antimonide. Voltage biasing of the substrate generates a resonance shift in the metamaterial response that is tunable over a broad operating range. The mid-infrared tunable metamaterials have the potential to become the building blocks of chip based active optical devices in mid-infrared ranges, which can be used for many applications, such as thermal imaging, remote sensing, and environmental monitoring.

  17. Mid-infrared tunable metamaterials

    Energy Technology Data Exchange (ETDEWEB)

    Brener, Igal; Miao, Xiaoyu; Shaner, Eric A.; Passmore, Brandon Scott

    2017-07-11

    A mid-infrared tunable metamaterial comprises an array of resonators on a semiconductor substrate having a large dependence of dielectric function on carrier concentration and a semiconductor plasma resonance that lies below the operating range, such as indium antimonide. Voltage biasing of the substrate generates a resonance shift in the metamaterial response that is tunable over a broad operating range. The mid-infrared tunable metamaterials have the potential to become the building blocks of chip based active optical devices in mid-infrared ranges, which can be used for many applications, such as thermal imaging, remote sensing, and environmental monitoring.

  18. Magnetic susceptibility of curium pnictides

    International Nuclear Information System (INIS)

    Nave, S.E.; Huray, P.G.; Peterson, J.R.; Damien, D.A.; Haire, R.G.

    1981-09-01

    The magnetic susceptibility of microgram quantities of 248 CmP and 248 CmSb has been determined with the use of a SQUID micromagnetic susceptometer over the temperature range 4.2 to 340 K and in the applied magnetic field range of 0.45 to 1600 G. The fcc (NaCl-type) samples yield magnetic transitions at 73K and 162 K for the phosphide and antimonide, respectively. Together with published magnetic data for CmN and CmAs, these results indicate spatially extended exchange interactions between the relatively localized 5f electrons of the metallic actinide atoms

  19. Status of SAT CID InSb detector technology and applications

    International Nuclear Information System (INIS)

    Chatard, J.P.; Lussereau, A.; Lorans, D.

    1985-01-01

    This paper presents SAT indium antimonide Charge Injection Devices (C.I.D) Technology, post focal plane signal processing and some applications. These detectors are constituted by MOS capacitors realized on InSb wafers using integrated circuit-like processing. When a negative voltage is applied to the structure (put it into depletion) the capacitors form integrating detectors for use in 3-5 μm band. Linear arrays constituted by a line of single capacitors, matrix arrays constituted by a group of two coupled MOS capacitors, collect and store photon generated charge carriers. In the last case, the selection of a site is accomplished by X-Y decoding technique

  20. Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices

    Science.gov (United States)

    Mourik, V.; Zuo, K.; Frolov, S. M.; Plissard, S. R.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.

    2012-05-01

    Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. Here, we report electrical measurements on indium antimonide nanowires contacted with one normal (gold) and one superconducting (niobium titanium nitride) electrode. Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields on the order of 100 millitesla, we observe bound, midgap states at zero bias voltage. These bound states remain fixed to zero bias, even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.

  1. Growth and Optimization of 2 Micrometers InGaSb/AlGaSb Quantum-Well-Based VECSELs on GaAs/AlGaAs DBRs

    Science.gov (United States)

    2013-08-01

    active region consists of nine In0.2Ga0.8Sb QWs separated by pump absorbing Al0.25Ga0.75 Sb barriers. An AlSb confinement layer on each side of the...by pump absorbing Al0.25Ga0.75Sb barriers and AlSb top/bottom clad. The key feature of the antimonide VECSEL based on the GaAs/AlGaAs DBRs is the...also enhanced by the AlSb carrier con- finement layers. However, the “ABC” empirical model is not adequate to model the carrier losses at high carrier

  2. Cd-Sb-Al system

    International Nuclear Information System (INIS)

    Belotskij, D.P.; Dundich, M.S.; Kotsyumakha, M.P.; Makhova, M.K.; Lesina, N.V.; Noval'kovskij, N.P.

    1985-01-01

    The methods of differential-thermal, microstructural analyses and measuring microhardness are used to investigate the phase diagrams of polythermal sections CdSb-AlSb, CdSb-Al, Cd-AlSb, Cdsub(0.5)Alsub(0.5)-Sb, CdSb-Alsub(0.2)Cdsub(0.8) of the ternary system Cd-Sb-Al. The liquidus projection of the Cd-Sb-Al system is plotted; it has been found that the surface of aluminium antimonide formation occupies a large part of the phase diagram in the field of which the lamination region is located

  3. Study of the influence of semiconductor material parameters on acoustic wave propagation modes in GaSb/AlSb bi-layered structures by Legendre polynomial method

    Science.gov (United States)

    Othmani, Cherif; Takali, Farid; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi

    2016-09-01

    The propagation of Rayleigh-Lamb waves in bi-layered structures is studied. For this purpose, an extension of the Legendre polynomial (LP) method is proposed to formulate the acoustic wave equation in the bi-layered structures induced by thin film Gallium Antimonide (GaSb) and with Aluminum Antimonide (AlSb) substrate in moderate thickness. Acoustic modes propagating along a bi-layer plate are shown to be quite different than classical Lamb modes, contrary to most of the multilayered structures. The validation of the LP method is illustrated by a comparison between the associated numerical results and those obtained using the ordinary differential equation (ODE) method. The convergency of the LP method is discussed through a numerical example. Moreover, the influences of thin film GaSb parameters on the characteristics Rayleigh-Lamb waves propagation has been studied in detail. Finally, the advantages of the Legendre polynomial (LP) method to analyze the multilayered structures are described. All the developments performed in this work were implemented in Matlab software.

  4. CHEMICAL DISSOLUTION InAs, InSb, GaAs AND GaSb IN THE (NH42Cr2O7−HBr−H2O ETCHING COMPOSITIONS

    Directory of Open Access Journals (Sweden)

    I. V. Levchenko

    2017-09-01

    Full Text Available The features of InAs, InSb, GaAs, and GaSb dissolution in the (NH42Cr2O7−HBr−H2O etching compositions have been investigated. The chemical-dynamic polishing in the reproducible hydrodynamic conditions has been used. It was established that the arsenides etching rate changed similarly and achieved the maximum values in the oxidant saturated mixture (22 vol.%. It was found that the antimonides dissolution rate increases when the (NH42Cr2O7 concentration is increasing also. It was established that all etching compositions are polishing for InAs and GaAs, and in the case of InSb and GaSb the polishing solutions occupy about 50 % of the investigated concentrated regions. It was shown that the dissolution rate of all crystals decreases to 0,1 μm/min and the quality of the antimonides surface degrades when the H2O concentration is increasing. The substrates dissolution has the diffusion nature. Using metallographic analysis and atomic force microscopy it was confirmed a good quality of InAs, InSb, GaAs and GaSb surface obtained after chemical treatment in the (NH42Cr2O7−HBr−H2O polishing solutions.

  5. Demonstration of large format mid-wavelength infrared focal plane arrays based on superlattice and BIRD detector structures

    Science.gov (United States)

    Hill, Cory J.; Soibel, Alexander; Keo, Sam A.; Mumolo, Jason M.; Ting, David Z.; Gunapala, Sarath D.

    2009-11-01

    We have demonstrated the use of bulk antimonide based materials and type-II antimonide based superlattices in the development of large area mid-wavelength infrared (MWIR) focal plane arrays (FPAs). Barrier infrared photodetectors (BIRDs) and superlattice-based infrared photodetectors are expected to outperform traditional III-V MWIR and LWIR imaging technologies and are expected to offer significant advantages over II-VI material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow InAs/GaSb superlattice pin photodiodes and bulk InAsSb structures on GaSb substrates. The coupled quantum well superlattice device offers additional control in wavelength tuning via quantum well sizes and interface composition, while the BIRD structure allows for device fabrication without additional passivation. As a demonstration of the large area imaging capabilities of this technology, we have fabricated mid-wavelength 1024 × 1024 pixels superlattice imaging FPAs and 640 × 512 MWIR arrays based on the BIRD concept. These initial FPA have produced excellent infrared imagery.

  6. Study of the influence of semiconductor material parameters on acoustic wave propagation modes in GaSb/AlSb bi-layered structures by Legendre polynomial method

    Energy Technology Data Exchange (ETDEWEB)

    Othmani, Cherif, E-mail: othmanicheriffss@gmail.com; Takali, Farid; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi

    2016-09-01

    The propagation of Rayleigh–Lamb waves in bi-layered structures is studied. For this purpose, an extension of the Legendre polynomial (LP) method is proposed to formulate the acoustic wave equation in the bi-layered structures induced by thin film Gallium Antimonide (GaSb) and with Aluminum Antimonide (AlSb) substrate in moderate thickness. Acoustic modes propagating along a bi-layer plate are shown to be quite different than classical Lamb modes, contrary to most of the multilayered structures. The validation of the LP method is illustrated by a comparison between the associated numerical results and those obtained using the ordinary differential equation (ODE) method. The convergency of the LP method is discussed through a numerical example. Moreover, the influences of thin film GaSb parameters on the characteristics Rayleigh–Lamb waves propagation has been studied in detail. Finally, the advantages of the Legendre polynomial (LP) method to analyze the multilayered structures are described. All the developments performed in this work were implemented in Matlab software.

  7. Heavily-doped 2D-quantized structures and the Einstein relation

    CERN Document Server

    Ghatak, Kamakhya P

    2015-01-01

    This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing ma...

  8. Einstein's photoemission emission from heavily-doped quantized structures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2015-01-01

    This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

  9. Debye screening length effects of nanostructured materials

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2014-01-01

    This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped ...

  10. Quartz-enhanced photoacoustic spectroscopy sensor for ethylene detection with a 3.32 μm distributed feedback laser diode

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Ba, T.; Triki, M.; Vicet, A., E-mail: a.vicet@univ-montp2.fr [Université de Montpellier, IES, UMR 5214, F-34000 Montpellier (France); CNRS, IES, UMR 5214, F-34000 Montpellier (France); Desbrosses, G. [LSTM, UMR 113, IRD, CIRAD, UM2, SupAgro, Université Montpellier 2, Place E. Baaillon, F-34095 Montpellier (France)

    2015-02-15

    An antimonide distributed feedback quantum wells diode laser operating at 3.32 μm at near room temperature in the continuous wave regime has been used to perform ethylene detection based on quartz enhanced photoacoustic spectroscopy. An absorption line centered at 3007.52 cm{sup −1} was investigated and a normalized noise equivalent absorption coefficient (1σ) of 3.09 10{sup −7} cm{sup −1} W Hz{sup −1/2} was obtained. The linearity and the stability of the detection have been evaluated. Biological samples’ respiration has been measured to validate the feasibility of the detection setup in an agronomic environment, especially on ripening apples.

  11. Non-destructive plasma frequency measurement for a semiconductor thin film using broadband surface plasmon polaritons

    Science.gov (United States)

    Yang, Tao; Ge, Jia-cheng; Li, Xing-ao; Stantchev, Rayko Ivanov; Zhu, Yong-yuan; Zhou, Yuan; Huang, Wei

    2018-03-01

    Measurement of the plasma frequency of a semiconductor film using broadband surface plasmon is demonstrated in this paper. We theoretically deduce a formula about the relation between plasma frequency and characteristic surface plasmon frequency. The characteristic surface plasmon frequency can be captured from the cut-off frequency of the transmission spectra of the broadband surface plasmon, which is used to measure the plasma frequency indirectly. The plasma frequencies of an intrinsic indium antimonide with and without optical illuminance are measured with a THz time-domain spectrometer at room temperature. The experimental measured plasma frequencies fit well with theoretical and simulation results. Compared with other methods, the proposed method has a special advantage on measuring the plasma frequency for a thin semiconductor film coated on other materials.

  12. Template-assisted electrodeposition of indium–antimony nanowires – Comparison of electrochemical methods

    Energy Technology Data Exchange (ETDEWEB)

    Hnida, Katarzyna, E-mail: hnida@chemia.uj.edu.pl [Department of Physical Chemistry and Electrochemistry, Jagiellonian University, Ingardena 3, 30060 Krakow (Poland); Mech, Justyna [Faculty of Non-Ferrous Metals, AGH University of Science and Technology, Al. A. Mickiewicza 30, 30059 Krakow (Poland); Sulka, Grzegorz D. [Department of Physical Chemistry and Electrochemistry, Jagiellonian University, Ingardena 3, 30060 Krakow (Poland)

    2013-12-15

    Indium antimonide (InSb) is a III–V compound semiconductor that in a form of nanowires can possess improved thermoelectrical and optical properties compared to the corresponding bulk crystal. Here, we applied three electrodeposition techniques for a fast and inexpensive template-assisted fabrication of InSb nanowires from a sodium citrate-citric acid solution at room temperature. The home-made anodic aluminum oxide (AAO) templates with the pore diameter of 100 nm were used. InSb nanowires were synthesized by potentiostatic, galvanostatic and periodic pulse reverse techniques. The morphology, composition and crystallinity of as-obtained and annealed nanowires were investigated and compared with the literature data. It was found that the potentiostatic and pulse reverse methods gave crystalline nanowires. On the other hand, the constant current density deposition results in a partially amorphous nanowire material.

  13. Reflectivity modulator based on GaSb/GaAs heterostructure

    International Nuclear Information System (INIS)

    Rabbaa, S

    2017-01-01

    A structure of gallium antimonide (GaSb) and gallium arsenide (GaAs) wafers is built to modulate light reflectivity at CO 2 laser wavelength. A quantum well composed of GaSb/GaAs heterojunction with highly doped GaAs up to 3×10 18 cm -3 is inserted inside a layer structure. A grating of periodic structure of GaAs and gold layer is added just below the substrate. Gsolver software is used to determine the reflectivity of incident light with the existence of free carriers. A voltage is applied to the doped layer to deplete the free electrons and the reflectivity is determined again. The significant difference in reflectivity between the two cases can be used to build a light reflectivity modulator device. (paper)

  14. In situ measurements of methane in the troposphere and the stratosphere by the Ultra Light SpEctrometer Amulse

    Science.gov (United States)

    Khair, Zineb Miftah El; Joly, Lilian; Cousin, Julien; Decarpenterie, Thomas; Dumelié, Nicolas; Maamary, Rabih; Chauvin, Nicolas; Durry, Georges

    2017-12-01

    Methane plays an important role in the radiative balance of the Earth climate: about 20% of the manmade global warming is related to methane emissions. To contribute to the study of CH4 trends, we have developed a compact lightweight spectrometer (2.5 kg) by combining an antimonide laser diode at 3.24 µm with an 8 m optical multipass path cell open to the atmosphere. This laser sensor is to be operated from weather balloons to provide with regular in situ methane soundings from ground level up to 25 km. In this paper, the laser sensor is described as well as the processing of the absorption spectra and the calibration of the instrument. The concentration data obtained from recent stratospheric balloon flights are reported and discussed.

  15. Electronic structure and high pressure phase transition in LaSb and CeSb

    International Nuclear Information System (INIS)

    Mathi Jaya, S.; Sanyal, S.P.

    1992-09-01

    The electronic structure and high pressure structural phase transition in cerium and lanthanum antimonides have been investigated using the tight binding LMTO method. The calculation of total energy reveals that the simple tetragonal structure is found to be stable at high pressures for both the compounds. In the case of LaSb, the calculated value of the equilibrium cell volume and the cell volume at which phase transition occurs are found to have a fairly good agreement with the experimental results. However, in the case of CeSb, the agreement is not as good as in LaSb. We also predicted the most favoured c/a value in the high pressure phase (simple tetragonal) for these compounds. Further we present the calculated results on the electronic structure of these systems at the equilibrium as well as at the reduced cell volumes. (author). 8 refs, 11 figs, 1 tab

  16. Noise and diffusion of hot electrons in n-InSb

    International Nuclear Information System (INIS)

    Barejkis, V.; Viktoravichyus, V.; Gal'dikas, A.; Milyushite, R.; Pozhela, Yu.

    1982-01-01

    Hot electron superhigh-frequency noises in indium antimonide have been studied experimentally and by the Monte Carlo method. It has been obtained both experimentally and theoretically that in n-InSb with impurity content 10 14 cm - 3 at lattice helium temperatures in electric fields of 10 V/cm order at frequency 10 GHz the longitudinal spectial density of current fluctuations (SDF) exceeds the transverse one. This is due to the extension of distribution function that takes place as a result of electron emittance of HF-phonons. The increase of the electric field value, of the lattice temperature or ionized impurity concentration result in random electron motion and in usual anizotropy of current SDF, (the current SDF along the field is less than the one across the field). It is also discovered that the scattering using ionized impurities significantly affects the value of noise temperature and its anizotropy

  17. Nanomaterials for Electronics and Optoelectronics

    Science.gov (United States)

    Koehne, Jessica E.; Meyyappan, M.

    2011-01-01

    Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

  18. Grating spectrometer installation for electron cyclotron emission measurements on the DIII-D tokamak using circular waveguide and synchronous detection

    International Nuclear Information System (INIS)

    Lohr, J.; Jahns, G.; Moeller, C.; Prater, R.

    1986-01-01

    The grating spectrometer installation on the DIII-D tokamak uses fundamental circular waveguide propagating the TE 11 lowest-order mode followed by oversized circular guide carrying the low-loss TE 01 mode. The short section of fundamental guide permits use of an electronic chopper operating at 100 kHz for both calibration and plasma operation. By using ac-coupled amplifiers tuned to the chopping frequency, the background signal generated in the indium antimonide detectors by neutrons and x rays is automatically subtracted and the system noise bandwidth is reduced. Compared with a quasi-optical system, the much smaller fundamental horn and front-end waveguide allow the waveguide system to be located outside a gate valve. With this configuration the entire waveguide run, including the actual horn and vacuum window used during plasma operations, can be included in the calibration setup

  19. Ultrahigh sensitive temperature sensor based on graphene-semiconductor metamaterial

    Science.gov (United States)

    Keshavarz, A.; Zakery, A.

    2017-12-01

    In this paper, we theoretically describe a nanoscale THz metamaterial, consisting of a graphene H-shaped that is located on an indium antimonide (InSb) substrate. This metamaterial in its simulated transmission spectrum exhibits a filtering effect and at a specific frequency, the percentage of light passing through the metamaterial is greatly reduced. Since the optical properties of graphene and InSb strongly depend on temperature, as the temperature changes, the frequency of resonance is also shifted. Thus we can expect our structure is suitable for ultrahigh sensitive temperature sensors. The temperature sensor presented is very sensitive with a sensitivity of 1814 nm/{°C} which is very high compared to other designed structures. This THz temperature sensor can play an important role for high-accurate temperature measurements.

  20. Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

    Directory of Open Access Journals (Sweden)

    Aho Arto

    2017-01-01

    Full Text Available Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

  1. Nanoscale III-V on Si-based junctionless tunnel transistor for EHF band applications

    Science.gov (United States)

    Goswami, Yogesh; Asthana, Pranav; Ghosh, Bahniman

    2017-06-01

    A single gate III-V junctionless tunnel field effect transistor (SG-JLTFET) has been reported which shows excellent dc characteristics at low power supply operation. This device has a thin uniformly n-type doped channel of GaSb i.e. gallium antimonide which is grown epitaxially over silicon substrate. The DC performance parameters such as {I}{ON}, {I}{ON}/{I}{OFF}, average and point subthreshold slope as well as device parameters for analog applications viz. transconductance {g}{{m}}, transconductance generation efficiency {g}{{m}}/{I}{{D}}, various capacitances and the unity gain frequency {f}{{T}} are studied using a device simulator. Along with examining its endurance to short channel effects, the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET (DG-JLTFET). The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.

  2. Investigation of impurity states in AlSb

    International Nuclear Information System (INIS)

    Agaev, Ya.; Bekmedova, N.G.; Mikhailov, A.P.

    1976-01-01

    The spectra of infrared absorption and the Hall effect have been investigated in the impurity region of aluminium antimonide crystals doped with sulphur and tellurium. By the measurements of the Hall effect temperature dependence in n-AlSb(S) and n-AlSb(Te) crystals determined is the activation energy of an impurity level equal to 0.24 eV and 0.068 eV respectively. The ionization energy for n-AlSb(S), equal to 0.22 eV, and for n-AlSb(Te) equal to 0.09 eV has been found from the infrared absorption curves. The absorption bands caused by the ionized impurity-band transition have been shown to be well described by the Callouway formula. Deep impurity centers have been revealed

  3. Enhancement of thermoelectric efficiency of CoSb3-based skutterudites by double filling with K and Tl

    Science.gov (United States)

    Kurosaki, Ken; Li, Guanghe; Ohishi, Yuji; Muta, Hiroaki; Yamanaka, Shinsuke

    2014-10-01

    The high-temperature thermoelectric properties of thallium (Tl) and potassium (K) double-filled cobalt antimonide (CoSb3)-based skutterudites with nominal compositions TlxK0.3Co4Sb12 (x = 0.1-0.3) were investigated. The filling fraction of Tl in CoSb3 was enhanced by co-filling with K, which resulted in all of the samples showing the filled-skutterudite single phase. Owing to the high filling ratio, the carrier concentration in the sample with x = 0.3 was as high as 4.3 × 1020 cm-3 at room temperature. Furthermore, quite low lattice thermal conductivity (as low as 0.9 W m-1 K-1) was obtained for the sample with x = 0.3, probably because of strong phonon scattering by the Tl and K co-rattling effect, which resulted in a maximum zT of around one at 773 K.

  4. Transient effects of ionizing radiation in Si, InGaAsP, GaAlSb, and Ge photodiodes

    International Nuclear Information System (INIS)

    Wiczer, J.J.; Barnes, C.E.; Dawson, L.R.

    1980-01-01

    Certain military applications require the continuous operation of optoelectronic information transfer systems during exposure to ionizing radiation. In such an environment the optical detector can be the system element which limits data transmission. We report here the measured electrical and optical characteristics of an irradiation tolerant photodiode fabricated from a double heterojunction structure in the gallium aluminum antimonide (GaAlSb) ternary semiconductor system. A series of tests at Sandia Laboratories' Relativistic Electron Beam Accelerator (REBA) subjected this device and commercially available photodiodes (made from silicon, germanium, and indium gallium arsenide phosphide) to dose rate levels of 10 7 to 10 8 rads/sec. The results of these tests show that the thin GaAlSb double heterojunction photodiode structure generates significantly less unwanted radiation induced current density than that of the next best commercial device

  5. Crystal structure, magnetism, {sup 89}Y solid state NMR, and {sup 121}Sb Moessbauer spectroscopic investigations of YIrSb

    Energy Technology Data Exchange (ETDEWEB)

    Benndorf, Christopher [Institut fuer Physikalische Chemie, Universitaet Muenster (Germany); Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Heletta, Lukas; Block, Theresa; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Eckert, Hellmut [Institut fuer Physikalische Chemie, Universitaet Muenster (Germany); Institute of Physics in Sao Carlos, University of Sao Paulo, Sao Carlos (Brazil)

    2017-02-15

    The ternary antimonide YIrSb was synthesized from the binary precursor YIr and elemental antimony by a diffusion controlled solid-state reaction. Single crystals were obtained by a flux technique with elemental bismuth as an inert solvent. The YIrSb structure (TiNiSi type, space group Pnma) was refined from single-crystal X-ray diffractometer data: a = 711.06(9), b = 447.74(5), c = 784.20(8) pm, wR{sub 2} = 0.0455, 535 F{sup 2} values, 20 variables. {sup 89}Y solid state MAS NMR and {sup 121}Sb Moessbauer spectra show single resonance lines in agreement with single-crystal X-ray data. YIrSb is a Pauli paramagnet. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Photocathodes for High Repetition Rate Light Sources

    Energy Technology Data Exchange (ETDEWEB)

    Ben-Zvi, Ilan [Stony Brook Univ., NY (United States). Dept. of Physics and Astronomy. Center for Accelerator Science and Education

    2014-04-20

    This proposal brought together teams at Brookhaven National Laboratory (BNL), Lawrence Berkeley National Laboratory (LBNL) and Stony Brook University (SBU) to study photocathodes for high repetition rate light sources such as Free Electron Lasers (FEL) and Energy Recovery Linacs (ERL). Below details the Principal Investigators and contact information. Each PI submits separately for a budget through his corresponding institute. The work done under this grant comprises a comprehensive program on critical aspects of the production of the electron beams needed for future user facilities. Our program pioneered in situ and in operando diagnostics for alkali antimonide growth. The focus is on development of photocathodes for high repetition rate Free Electron Lasers (FELs) and Energy Recovery Linacs (ERLs), including testing SRF photoguns, both normal-­conducting and superconducting. Teams from BNL, LBNL and Stony Brook University (SBU) led this research, and coordinated their work over a range of topics. The work leveraged a robust infrastructure of existing facilities and the support was used for carrying out the research at these facilities. The program concentrated in three areas: a) Physics and chemistry of alkali-­antimonide cathodes (BNL – LBNL) b) Development and testing of a diamond amplifier for photocathodes (SBU -­ BNL) c) Tests of both cathodes in superconducting RF photoguns (SBU) and copper RF photoguns (LBNL) Our work made extensive use of synchrotron radiation materials science techniques, such as powder-­ and single-­crystal diffraction, x-­ray fluorescence, EXAFS and variable energy XPS. BNL and LBNL have many complementary facilities at the two light sources associated with these laboratories (NSLS and ALS, respectively); use of these will be a major thrust of our program and bring our understanding of these complex materials to a new level. In addition, CHESS at Cornell will be used to continue seamlessly throughout the NSLS dark period and

  7. InAs/GaSb type-II superlattice infrared detectors: Future prospect

    Science.gov (United States)

    Rogalski, A.; Martyniuk, P.; Kopytko, M.

    2017-09-01

    Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall (SRH) lifetime are equal. InAs/GaSb T2SL photodetectors offer similar performance to HgCdTe at an equivalent cut-off wavelength, but with a sizeable penalty in operating temperature, due to the inherent difference in SRH lifetimes. It is predicted that since the future infrared (IR) systems will be based on the room temperature operation of depletion-current limited arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to the system optics, the material system with long SRH lifetime will be required. Since T2SLs are very much resisted in attempts to improve its SRH lifetime, currently the only material that meets this requirement is HgCdTe. Due to less ionic chemical bonding, III-V semiconductors are more robust than their II-VI counterparts. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability

  8. Geochemistry and mineralogy of Pd in the magnetitite layer within the upper gabbro of the Mesoarchean Nuasahi Massif (Orissa, India)

    Science.gov (United States)

    Prichard, Hazel M.; Mondal, Sisir K.; Mukherjee, Ria; Fisher, Peter C.; Giles, Nicolas

    2018-04-01

    Palladium concentrations of 1-3 ppm with an average Pt/Pd ratio of 0.15 have been located for the first time in a magnetitite layer in the Nuasahi Massif in Orissa India. This layer occurs at a high stratigraphic level in the complex and is nearly 4-km long and 5-12-m thick. The sections of the Pd-rich zone identified to date extend over a distance of 1 km at the southern end of the layer. Several phases of mineralization are evident. The first, primary assemblage of platinum-group minerals (PGM) contains Pd-sulfides (vysotskite), Pd-Pb alloys (zvyagintsevite), and a Pd-In alloy, a mineral probably new to mineralogy. These PGM are confined to central magnetite grains in the magnetitites. The magnetite grains with exsolved fine laths of ilmenite at centers are referred to as central magnetite grains. These central magnetite grains are commonly surrounded by blebs of ilmenite and magnetite that contain the majority of the PGM. These are dominated by Pd-antimonides, variably altered to Pd-oxides, and other PGM including PtAs2 (sperrylite), RuS2 (laurite), and IrRhAsS (irarsite/hollingwothite). Many of these PGM also occur in the interstitial silicates, with rare occurrences in the central magnetite grains. We propose that the platinum-group elements (PGE) crystallized during a minor sulfide saturation event that occurred as the magnetitites crystallized. This event produced the minor Cu-sulfides in these magnetitites. Later introduction of antimony and arsenic, during the alteration event that produced the blebby ilmenite and magnetite, led to the more primary PGM being succeeded by the main PGM assemblage, dominated by Pd-antimonides. These are associated with secondary Cu minerals and sperrylite. Subsequent oxidation during weathering in the hot wet Indian climate produced the Pd-oxides. The Nuasahi Massif is a sill-like Archean layered ultramafic-mafic intrusion genetically linked to high-Mg siliceous basalt or boninites and is characterized by unusually thick

  9. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

    Science.gov (United States)

    Ji, Xianghai; Yang, Xiaoguang; Yang, Tao

    2017-06-01

    We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve the Ga droplets on the thin InAs stems. Then, the flow rates of TMGa and TMSb are increased to enhance the axial growth rate. Because of the slower radial growth rate of GaSb at higher growth temperature, GaSb nanowires grown at 500 °C exhibit larger diameters than those grown at 520 °C. However, with respect to the axial growth, due to the Gibbs-Thomson effect and the reduction in the droplet supersaturation with increasing growth temperature, GaSb nanowires grown at 500 °C are longer than those grown at 520 °C. Detailed transmission electron microscopy (TEM) analyses reveal that the GaSb nanowires have a perfect zinc-blende (ZB) crystal structure. The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics.

  10. Materials technology for InSb MISFET applications

    International Nuclear Information System (INIS)

    Barth, W.; Chen, C.W.; Lile, D.L.; Junga, F.

    1989-01-01

    The narrow and direct bandgap of indium antimonide is frequently used to good advantage in detection of light in the infra-red region; however, to data little use has been made of the high mobilities associated with this material. Although its high intrinsic carrier concentration generally necessitates operation at cooled temperatures, higher speeds and the advantage of integrating other devices on-chip with the infrared detectors encourages the development of an active device technology on this semiconductor. Considering its small bandgap, the problems associated with good p-n junctions may favor the MISFET in this application. Surprisingly, little has been done toward this goal, though structures such as charge-coupled-devices, focal array detectors, and a few insulated gate FETs have been fabricated. In this paper the authors present the results of recent work toward the development of a fabrication technology for InSb MISFETs. Specifically, they have conducted a study of etchants, metal contacts, and dielectrics for application to mesa-structure, insulated gate field transistors

  11. Effect of AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si(001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Mori, M. [Nano and Functional Material Sciences, Graduate School of Science and Engineering, University of TOYAMA, Gofuku 3190, Toyama 930-8555 (Japan)], E-mail: morimasa@eng.u-toyama.ac.jp; Murata, K.; Fujimoto, N.; Tatsuyama, C.; Tambo, T. [Nano and Functional Material Sciences, Graduate School of Science and Engineering, University of TOYAMA, Gofuku 3190, Toyama 930-8555 (Japan)

    2007-07-31

    Aluminum antimonide (AlSb) layers with various thickness ranged from about 8 to 250 nm were grown at 520 deg. C as the buffer layer for the heteroepitaxial growth of InSb films on Si(001) substrates. InSb films were grown at 400 deg. C on the AlSb/Si(001), and were characterized by X-ray diffraction (XRD), atomic force microscope, as a function of the thickness of the AlSb layer. The XRD patterns of the InSb films grown on the AlSb layers show that even if the AlSb buffer layer, whose surface consists of many islands, is as thin as 8 nm, it is effective for the heteroepitaxial growth of InSb film on a Si(001) substrate, and the AlSb layer of about 40 nm is thick enough to grow heteroepitaxial InSb films on the Si(001) substrate. The results of the {phi} scan patterns of the films show that InSb films on a Si(001) substrate with AlSb buffer layer were heteroepitaxially grown without any rotation in the growth plane.

  12. New space processing experiments for the Skylab missions.

    Science.gov (United States)

    Bredt, J. H.

    1972-01-01

    The M512 Materials Processing Facility, which is the main item of equipment for the Skylab space manufacturing experiments is described. It is basically an electron-beam welding apparatus, consisting of a battery power supply, a 20-kV electron beam source, and a spherical 40-cm-diam vacuum chamber. It will be used to perform the M551 Metals Melting Experiment, the M552 Exothermic Brazing Experiment, the M553 Sphere Forming Experiment, the M554 Composite Casting Experiment, the M555 Gallium Arsenide Crystal Growth Experiment, the M561 Whisker-Reinforced Composites Experiment, the M562 Indium Antimonide Crystal Growth, Experiment, the M563 Mixed III-V Crystal Growth Experiment, the M564 Alkali Halide Eutectics Experiment, the M565 Silver Grids Melted in Space Experiment, and the M566 Copper-Aluminum Eutectic Experiment. Three apparatus systems designed to broaden the technical scope of the experiments and to gain experience with new experimental techniques are described. These are an electrophoretic separator, an electromagnetic levitation system, and a versatile electric furnace with an electronic control system.

  13. Archimedean (4,8)-tessellation of haeckelite ultrathin nanosheets composed of boron and aluminum-group V binary materials.

    Science.gov (United States)

    Brown, Paul A; Shuford, Kevin L

    2016-11-24

    A compendium of unique haeckelite boron and aluminum-group V binary materials have been assessed for their fundamental thermodynamic and ground state electronic properties within density functional theory. We explore their thermodynamic stability relative to new bulk haeckelite crystal structures and find a number of stable polymorphs of planar and buckled ultrathin nanosheets. The bulk boron and aluminum haeckelite crystals display semiconducting and metallic behavior. From the dispersion curves, we predict the formation of both indirect and direct bandgap crystals. We also discover the existence of a five-coordinate aluminum antimonide crystal hitherto never before observed. Moreover, it is found that a number of the Archimedean four and eight membered ring tessellation planar nanosheets could form should synthesis be attempted. It is predicted that these nanosheets can attain two configurations - planar and buckled. From this work we find that combinations of elements such as boron and nitrogen or phosphorus, and aluminum and nitrogen will likely become true single-atom thick nanosheets. These materials show intrinsic indirect bandgap character, which spans the ultraviolet, visible, and infrared spectrum. In the boron series of these materials, the planar structures show double extrema in the bandstructures with van Hove singularities in the projected density of states at the Fermi energy suggesting strong light-matter interactions. The aluminum series we observe strong charge transfer and larger indirect bandgap nanosheets. This study serves as a starting point for a new class of inorganic bulk and ultrathin film materials, which can have many varied applications in nanotechnology.

  14. Thermophotovoltaic Arrays for Electrical Power Generation

    Energy Technology Data Exchange (ETDEWEB)

    Sarnoff Corporation

    2003-11-18

    Sarnoff has designed an integrated array of thermophotovoltaic (TPV) cells based on the In(Al)GaAsSb/GaSb materials system. These arrays will be used in a system to generate electrical power from a radioisotope heat source that radiates at temperatures from 700 to 1000 C. Two arrays sandwich the slab heat source and will be connected in series to build voltage. Between the arrays and the heat source is a spectral control filter that transmits above-bandgap radiation and reflects below-bandgap radiation. The goal is to generate 5 mW of electrical power at 3 V from a 700 C radiant source. Sarnoff is a leader in antimonide-based TPV cell development. InGaAsSb cells with a bandgap of 0.53 eV have operated at system conversion efficiencies greater than 17%. The system included a front-surface filter, and a 905 C radiation source. The cells were grown via organo-metallic vapor-phase epitaxy. Sarnoff will bring this experience to bear on the proposed project. The authors first describe array and cell architecture. They then present calculated results showing that about 80 mW of power can be obtained from a 700 C radiator. Using a conservative array design, a 5-V output is possible.

  15. Universality of modular symmetries in two-dimensional magnetotransport

    Science.gov (United States)

    Olsen, K. S.; Limseth, H. S.; Lütken, C. A.

    2018-01-01

    We analyze experimental quantum Hall data from a wide range of different materials, including semiconducting heterojunctions, thin films, surface layers, graphene, mercury telluride, bismuth antimonide, and black phosphorus. The fact that these materials have little in common, except that charge transport is effectively two-dimensional, shows how robust and universal the quantum Hall phenomenon is. The scaling and fixed point data we analyzed appear to show that magnetotransport in two dimensions is governed by a small number of universality classes that are classified by modular symmetries, which are infinite discrete symmetries not previously seen in nature. The Hall plateaux are (infrared) stable fixed points of the scaling-flow, and quantum critical points (where the wave function is delocalized) are unstable fixed points of scaling. Modular symmetries are so rigid that they in some cases fix the global geometry of the scaling flow, and therefore predict the exact location of quantum critical points, as well as the shape of flow lines anywhere in the phase diagram. We show that most available experimental quantum Hall scaling data are in good agreement with these predictions.

  16. Characterization of Cs-Sb cathodes for high charge RF photoinjectors

    CERN Document Server

    AUTHOR|(CDS)2082505; Beghi, Marco

    Future accelerators such as CLIC (Compact LInear Collider), require high brightness electron beams that could be produced with a photoinjector (laser-driven electron source). Cs2Te photocathodes in combination with ultra-violet (UV) laser beams are currently used in many photoinjector facilities, but requirements to the electron sources for future accelerators like CLIC are more demanding. The main challenge for the CLIC drive beam photoinjector is to achieve high bunch charges (8.4 nC), high bunch repetition rates (500 MHz) within long trains (140 s) and with suciently long cathode lifetimes. In particular the laser pulse energy in UV, for such long pulse trains, is currently limited due to a degradation of the beam quality during the 4th harmonic frequency conversion process. Using the 2nd harmonic (green laser beam), provided it is matched with a low photoemission threshold photocathode material, would overcome this limitation. Cesium antimonide (Cs3Sb), being a photoemissive material in the visible range,...

  17. First-principles calculations of the electronic and structural properties of GaSb

    Energy Technology Data Exchange (ETDEWEB)

    Castaño-González, E.-E. [Universidad del Norte, Grupo de Investigación en Física Aplicada, Departamento de Física (Colombia); Seña, N. [Universidad Nacional de Colombia-Colombia, Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones (Colombia); Mendoza-Estrada, V.; González-Hernández, R., E-mail: rhernandezj@uninorte.edu.co [Universidad del Norte, Grupo de Investigación en Física Aplicada, Departamento de Física (Colombia); Dussan, A. [Universidad Nacional de Colombia-Colombia, Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones (Colombia); Mesa, F., E-mail: fredy.mesa@urosario.edu.co [Universidad del Rosario, Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas (Colombia)

    2016-10-15

    In this paper, we carried out first-principles calculations in order to investigate the structural and electronic properties of the binary compound gallium antimonide (GaSb). This theoretical study was carried out using the Density Functional Theory within the plane-wave pseudopotential method. The effects of exchange and correlation (XC) were treated using the functional Local Density Approximation (LDA), generalized gradient approximation (GGA): Perdew–Burke–Ernzerhof (PBE), Perdew-Burke-Ernzerhof revised for solids (PBEsol), Perdew-Wang91 (PW91), revised Perdew–Burke–Ernzerhof (rPBE), Armiento–Mattson 2005 (AM05) and meta-generalized gradient approximation (meta-GGA): Tao–Perdew–Staroverov–Scuseria (TPSS) and revised Tao–Perdew–Staroverov–Scuseria (RTPSS) and modified Becke-Johnson (MBJ). We calculated the densities of state (DOS) and band structure with different XC potentials identified and compared them with the theoretical and experimental results reported in the literature. It was discovered that functional: LDA, PBEsol, AM05 and RTPSS provide the best results to calculate the lattice parameters (a) and bulk modulus (B{sub 0}); while for the cohesive energy (E{sub coh}), functional: AM05, RTPSS and PW91 are closer to the values obtained experimentally. The MBJ, Rtpss and AM05 values found for the band gap energy is slightly underestimated with those values reported experimentally.

  18. Thermally tunable broadband terahertz metamaterials with negative refractive index

    Science.gov (United States)

    Li, Weili; Meng, Qinglong; Huang, Renshuai; Zhong, Zheqiang; Zhang, Bin

    2018-04-01

    A thermally tunable broadband metamaterials with negative refractive index (NRI) is investigated in terahertz (THz) region theoretically. The metamaterials is designed by fabricating two stand-up opposite L shape metallic structures on fused quartz substrate, and the indium antimonide (InSb) is filled in the bottom gap of the two L shape structures. The tunability is attributed to the InSb because the InSb can changes the capacitance of the gap area by adjusting the temperature. The transmission characteristics and the retrieved electromagnetic parameters of the metamaterials are analyzed. Results indicate that the resonant frequency and amplitude modulation of the metamaterials can be tuned continuously in broadband range (about 0.62 THz), and the phase modulation from - 2 to 3 rad is also achieved within broadband range (about 0.8 THz). In addition, the metamaterials shows dual-band NRI behaviors at 0 . 4- 0 . 9 THz and 1 . 06- 1 . 15 THz when the temperature increases to 400 K. The wedge-shaped prism simulations are implemented to verify the NRI characteristics and indicate that the NRI of the metamaterials can be achieved.

  19. Photoconduction spectroscopy of p-type GaSb films

    Energy Technology Data Exchange (ETDEWEB)

    Shura, M.W., E-mail: Megersa.Shura@live.nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Wagener, V.; Botha, J.R.; Wagener, M.C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 {mu}m. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley-Read-Hall lifetime and maximum value of the surface recombination velocity.

  20. Photoconduction spectroscopy of p-type GaSb films

    International Nuclear Information System (INIS)

    Shura, M.W.; Wagener, V.; Botha, J.R.; Wagener, M.C.

    2012-01-01

    Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 μm. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley–Read–Hall lifetime and maximum value of the surface recombination velocity.

  1. The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology

    Directory of Open Access Journals (Sweden)

    Ramelan Ari Handono

    2017-01-01

    Full Text Available Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology

  2. Enhancement of thermoelectric efficiency of CoSb3-based skutterudites by double filling with K and Tl

    Directory of Open Access Journals (Sweden)

    Ken eKurosaki

    2014-10-01

    Full Text Available The high-temperature thermoelectric properties of thallium (Tl and potassium (K double-filled cobalt antimonide (CoSb3-based skutterudites with nominal compositions TlxK0.3Co4Sb12 (x = 0.1–0.3 were investigated. The filling fraction of Tl in CoSb3 was enhanced by co-filling with K, which resulted in all of the samples showing the filled-skutterudite single phase. Owing to the high filling ratio, the carrier concentration in the sample with x = 0.3 was as high as 4.3 × 1020 cm−3 at room temperature. Furthermore, quite low lattice thermal conductivity (as low as 0.9 W m−1 K−1 was obtained for the sample with x = 0.3, probably because of strong phonon scattering by the Tl and K co-rattling effect, which resulted in a maximum zT of around one at 773 K.

  3. Thermoelectricity in correlated narrow-gap semiconductors

    Science.gov (United States)

    Tomczak, Jan M.

    2018-05-01

    We review many-body effects, their microscopic origin, as well as their impact on thermoelectricity in correlated narrow-gap semiconductors. Members of this class—such as FeSi and FeSb2—display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie–Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators—such as Ce3Bi4Pt3 for which we present new results—and propose a general classification of paramagnetic insulators. From the latter, FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we explore new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.

  4. Synthesis, crystal structure and physical properties of europium - manganese fluoride pnictides, EuMnPnF (Pn = P, As, Sb)

    Science.gov (United States)

    Plokhikh, I. V.; Charkin, D. O.; Verchenko, V. Yu.; Kuznetsov, A. N.; Tsirlin, A. A.; Kazakov, S. M.; Shevelkov, A. V.

    2018-02-01

    The quaternary compounds EuMnPnF (Pn = P, As, Sb) have been prepared via solid state route at 1173 K, and their crystal and electronic structures as well as magnetic and transport properties have been elucidated. These compounds belong to the widespread LaAgSO structure type and crystallize in tetragonal (P4/nmm) unit cells with a = 4.0292(1) Å, c = 8.9505(2) Å for EuMnPF, a = 4.1227(1) Å, c = 9.0846(2) Å for EuMnAsF, and a = 4.3120(1) Å, c = 9.4356(2) Å for EuMnSbF. At low temperatures, the magnetic response is dominated by Eu2+. Contrary to previous reports, we do not observe any magnetic transitions in EuMnPF down to 2 K, whereas its arsenide and antimonide analogs exhibit Eu2+ ordering around 3 K. According to the electrical resistivity measurements and density-functional calculations, all three compounds are narrow-gap semiconductors.

  5. Next decade in infrared detectors

    Science.gov (United States)

    Rogalski, A.

    2017-10-01

    Fundamental and technological issues associated with the development and exploitation of the most advanced infrared technologies is discussed. In these classes of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys, type II superlattices (T2SLs), barrier detectors, quantum wells, extrinsic detectors, and uncooled thermal bolometers. The sophisticated physics associated with the antimonide-based bandgap engineering will give a new impact and interest in development of infrared detector structures. Important advantage of T2SLs is the high quality, high uniformity and stable nature of the material. In general, III-V semiconductors are more robust than their II-VI counterparts due to stronger, less ionic chemical bonding. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability - the so-called "ibility" advantages. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. The microbolometer detectors are now produced in larger volumes than all other IR array technologies together. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VOx) or amorphous silicon (a-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement.

  6. Characterization of Cr-rich Cr-Sb multilayer films: Syntheses of a new metastable phase using modulated elemental reactants

    International Nuclear Information System (INIS)

    Regus, Matthias; Mankovsky, Sergiy; Polesya, Svitlana; Kuhn, Gerhard; Ditto, Jeffrey; Schürmann, Ulrich; Jacquot, Alexandre; Bartholomé, Kilian; Näther, Christian; Winkler, Markus; König, Jan D.; Böttner, Harald; Kienle, Lorenz; Johnson, David C.; Ebert, Hubert; Bensch, Wolfgang

    2015-01-01

    The new metastable compound Cr 1+x Sb with x up to 0.6 has been prepared via a thin film approach using modulated elemental reactants and investigated by in-situ X-ray reflectivity, X-ray diffraction, differential scanning calorimetry, energy dispersive X-ray analysis as well as transmission electron microscopy and atomic force microscopy. The new Cr-rich antimonide crystallizes in a structure related to the Ni 2 In-type structure, where the crystallographic position (1/3, 2/3, 3/4) is partially occupied by excess Cr. The elemental layers of the pristine material interdiffused significantly before Cr 1+x Sb crystallized. A change in the activation energy was observed for the diffusion process when crystal growth starts. First-principles electronic structure calculations provide insight into the structural stability, magnetic properties and resistivity of Cr 1+x Sb. - Graphical abstract: 1 amorphous multilayered film 2 interdiffused amorphous film 3 metastable crystalline phase 4 thermodynamic stable phase (and by-product). - Highlights: • Interdiffusion of amorphous Cr and Sb occurs before crystallization. • Crystallization of a new metastable phase Cr 1.6 Sb in Ni 2 In-type structure. • The new Cr-rich phase shows half-metallic behavior

  7. Analysis of PdGe-based contact on n-GaSb

    Science.gov (United States)

    Ghita, R. V.; Negrila, C. C.; Predoi, D.; Trusca, R.

    2018-02-01

    Pd-Ge based ohmic contacts on III-V semiconductor e.g. Pd-Ge on n-GaAs are viewed as a viable alternative to low contact resistance metallization. As it was remarked [1], together with the device dimensions decrease, the AuGeNi metallization system becomes inadequate for shallow-junction devices. This characteristic is related to the formation of a low melting point β-AuGa phase that leads to a poor contact thermal stability. Gallium Antimonide is anIII-V semiconductor compound that can be used in a photovoltaic convertor of GaAs/GaSb tandem stack with a predicted efficiency of 30%. Reduced series resistance on GaSb cells can be achieved by the improving of contact metallization properties. The present study is dedicated to the preparation conditions and structural analyzing of PdGe based contacts on n-GaSb, namely: Pd/Au/Ge. There are presented the depth profiling for PdGe metallization obtained from XPS measurements, and morphologic studies arisen from SEM technique and AFM technique.

  8. Microgap thermophotovoltaic systems with low emission temperature and high electric output

    Science.gov (United States)

    Mirmoosa, M. S.; Omelyanovich, M.; Simovski, C. R.

    2016-11-01

    We theoretically show that a thermophotovoltaic (TPV) system enhanced by a wire metamaterial opens the door to a prospective microgap TPVs which will combine high electric output with relatively low temperatures of the emitter. The suggested system comprises an array of parallel metal nanowires grown on top of a photovoltaic semiconductor and standing free in the vacuum gap between the host dielectric layer and the emitter, so that their ends are sufficiently close to the emitting surface. Due to the resonant near-field coupling between this wire medium and the emitter and due to the optimized layered structure of the whole system, the strongly super-Planckian radiative heat flux of resonant nature is engineered. In the suggested system, heavily doped silicon and indium antimonide are considered as the materials for the emitter and the photovoltaic cell, respectively. Also, the parallel nanowires are made of tungsten. Employing the minority-carrier transport model, it is shown that a power output equal to 26 kW m-2 can be achieved when the temperature of the doped-silicon emitter is only 500 °C.

  9. Thermal monitoring of gyrotron windows

    International Nuclear Information System (INIS)

    Huey, H.E.; Choi, E.; Hu, G.; Mundie, L.

    1983-01-01

    In a practical gyrotron device, the design of a reliable vacuum window to withstand high mean power densities is of utmost importance. Computer modelling of an actual window assumes a number of conditions including the power density profile, the electromagnetic wave attenuation constant of the window material and heat transfer coefficients. The last two factors can vary significantly with temperature. A technique for actually monitoring the real time temperature distribution over the window surface with an IR camera while the gyrotron is in operation has been developed. This measurement serves as an aid for developing the analysis of window designs. The ability to observe small hot spots due to tiny metallic specks on the window surface is also of great value in quality control and window failure prevention. The experimental arrangement involves an infrared camera (AGA780) with an indium antimonide detector (3-5 μm) observing the window through a grid pattern of tiny holes (cutoff for the 3rd harmonic of 60 GHz). A 12 0 FOV lens with a 12mm extension ring was used to defocus the grid. The thermal emissivity E /sub w/ approx. = 0.95. Thus, an IR measurement of the window is a surface temperature measurement. To minimize the problem of external reflections, the outside surface of the waveguide was painted black. This then requires a cool waveguide; room temperature is sufficient

  10. Electronic structure and thermoelectric properties of skutterudite compounds

    International Nuclear Information System (INIS)

    Kurmaev, E Z; Moewes, A; Shein, I R; Finkelstein, L D; Ivanovskii, A L; Anno, H

    2004-01-01

    We present soft x-ray fluorescence measurements of skutterudite compounds (CoAs 3 and CoSb 3 ). Our results are compared with x-ray photoelectron spectra (XPS) and band structure calculations. The occupancy of d states is found to increase in transition metal antimonides with respect to that of pure metals. The experimental spectra are interpreted in terms of our LDA band structure calculations and we find that electron correlation does not have to be taken into account. The intensity ratio of the Co L 2 to L 3 emission lines is found to be 0.20 and 0.15 for CoAs 3 and CoSb 3 , respectively, which we attribute to the decrease in Coster-Kronig processes in CoAs 3 compared to CoSb 3 with its smaller carrier density. The calculated values of the thermoelectric figures of merit show that CoSb 3 is the most promising thermoelectric material, which is in accordance with experimental measurements of the electrical conductivity and Seebeck coefficient

  11. Recent progress in nickel carcinogenesis. [Cornybacterium; E. coli; S. typhimurium; B. subtillis

    Energy Technology Data Exchange (ETDEWEB)

    Sunderman, F.W. Jr.

    1984-01-01

    Research on nickel carcinogenesis from 1979 to 1983 is reviewed. Epidemiological studies have strengthened the evidence that workers in nickel refineries have increased risks of lung and sinonasal cancers, but have not substantiated increased risks of respiratory cancers in other nickel-exposed workers. Carcinogenesis bioassays have demonstrated carcinogenicity of certain nickel sulfide, hydroxide, selenide, arsenide, antimonide, and telluride compounds following parenteral administration to rodents. Positive bacterial mutagenesis tests have been obtained with Ni(II) in Cornybacterium, but not in E. coli, S. typhimurium, or B. subtilis. Transformation assays of several soluble and crystalline Ni compounds have been positive in Syrian hamster embryo cells. Ni(II) binds to DNA, RNA, and nucleoproteins, and becomes localized in nucleoli. Genotoxic effects of Ni include: (a) chromosomal aberrations, including sister-chromatid exchanges, (b) DNA strandbreaks and DNA-protein cross-links, (c) inhibition of DNA and RNA synthesis, (d) infidelity of DNA transcription, and (e) mutations at the HGPRTase locus in Chinese hamster cells and the TK locus in mouse lymphoma cells. These findings are consistent with somatic mutation as the mechanism for initiation of nickel carcinogenesis. Ni compounds cause reversible transition of double-stranded poly(dG-dC) DNA from the right-handed B-helix to the left-handed Z-helix, suggesting a mechanism whereby nickel might modulate oncogene expression. 99 references, 6 tables.

  12. Surface characterisation of GaSb-films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Seemayer, Andreas; Hommes, Alexander; Wandelt, Klaus [Institute for Physical Cchemistry, University of Bonn (Germany); Huemann, Sascha; Vogel, Dirk [Max Planck Institut fuer Eisenforschung, Duesseldorf (Germany); Schulz, Stephan [Department of Chemistry, University of Essen (Germany)

    2009-07-01

    III-V semiconductor films used for opto- and microelectronic devices have traditionally been grown by (MO)MBE and LPE processes. An alternative metal-organic CVD-process, which has been established in the last two decades for high-throughput and low-cost fabrication works for nitrides, phosphides and arsenides, but is problematic for antimonides. In particular, for GaSb films an alternative route is a CVD-process using the heterocyclic single source precursor [{sup t}Bu{sub 2}GaSbEt{sub 2}]{sub 2}. Subject of the present work is the gas phase behaviour of the used precursor under UHV conditions and the surface characterisation of thin GaSb-films, which were grown in a self-made HV-MOCVD reactor on Si(001), by AES, S-XPS and AFM. The results are discussed in terms of a correlation of the electronic properties with the composition and structure of the films.

  13. Surface characterisation of MOCVD single source precursor grown GaSb-films

    Energy Technology Data Exchange (ETDEWEB)

    Seemayer, Andreas; Hommes, Alexander; Huemann, Sascha; Wandelt, Klaus [University of Bonn (Germany). Institute for Physical Chemistry; Hunger, Ralf [Hahn-Meitner-Institute Berlin GmbH, Berlin (Germany); Schulz, Stephan [University of Paderborn (Germany). Department Chemie

    2008-07-01

    III-V semiconductor films used for opto- and microelectronic devices have traditionally been grown by (MO)MBE and LPE processes. An alternative metal-organic CVD-process, which has been established in the last two decades for high-throughput and low-cost fabrication works for nitrides, phosphides and arsenides, but is problematic for antimonides. In particular, for GaSb films an alternative route is a CVD-process using the heterocyclic single source precursor [tBu{sub 2}GaSbEt{sub 2}]{sub 2}. Subject of the present work is the investigation of the surface physical properties of the produced films as well as the gas phase behaviour of the used precursor. Therefore films were produced on a Si(100) substrate in a HV-MOCVD reactor and investigated using AES, S-XPS and AFM. In addition, growth experiments under UHV conditions were performed. The results are discussed in terms of a correlation of the electronic properties with the composition and structure of the films.

  14. Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

    Directory of Open Access Journals (Sweden)

    Shouzhu Niu

    2017-11-01

    Full Text Available Groups III–V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K, have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

  15. ATLAS TileCal submodule B-field measurement

    International Nuclear Information System (INIS)

    Budagov, Yu.A.; Fedorenko, S.B.; Kalinichenko, V.V.; Lomakin, Yu.F.; Vorozhtsov, S.B.; Nessi, M.

    1997-01-01

    The work was done to cross check of the previous measurement done at CERN and to simulate the magnetic structure in the vicinity of the symmetry plane of the TileCal. To perform magnetic measurements for submodule the magnet E2 was chosen. The magnetometer used in the magnetic test of the submodule consists of Hall current supply and Hall voltage measuring device. The indium antimonide Hall probe used in this measurement is a model PKhE 606. Experimental set-up provides a true measurement accuracy of order ± 1%. External magnetic field measurements were conducted at the outer surface of the submodule. Two levels of the external field were applied: 108 Gs and 400 Gs. The result of this measurement in general confirms the data, obtained at CERN, but the shielding capability of the submodule under consideration was ∼ 20% higher than there. The field at the tile location is < 150 Gs up to the external field level 500 Gs and the tile field grows much less than the external field level in this range. The data obtained in this measurement could be used as a benchmark when producing a computer model of the TileCal magnetic field distribution

  16. Terahertz plasmon-induced transparency based on asymmetric dual-disk resonators coupled to a semiconductor InSb waveguide and its biosensor application

    Science.gov (United States)

    Shahamat, Yadollah; Vahedi, Mohammad

    2017-06-01

    An ultracompact double eight-shaped plasmonic structure for the realization of plasmon-induced transparency (PIT) in the terahertz (THz) region has been studied. The device consists of a semiconductor-insulator-semiconductor bus waveguide coupled to the dual-disk resonators. Indium antimonide is employed to excite SPP in the THz region. The transmission characteristics of the proposed device are simulated numerically by the finite-difference time-domain method. In addition, a theoretical analysis based on the coupled-mode theory for transmission features is presented and compared with the numerical results. Results are in good agreement. Also, the dependence of PIT frequency characteristics on the radius of the outer disk is discussed in detail. In addition, by removing one of the outer disk resonators, double-PIT peaks can be observed in the transmission spectrum, and the physical mechanism of the appeared peaks is investigated. Finally, an application of the proposed structure for distinguishing different states of DNA molecules is discussed. Results show that the maximum sensitivity with 654 GHz/RIU-1 could be obtained for a single PIT structure. The frequency shifts equal to 37 and 99 GHz could be observed for the denatured and the hybridized DNA states, respectively.

  17. Local emission spectroscopy of surface micrograins in A{sup III}B{sup V} semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, N. D., E-mail: ndzhukov@rambler.ru; Gluhovskoy, E. G.; Mosiyash, D. S. [Saratov State University (Russian Federation)

    2016-07-15

    The density-of-states spectra and the parameters of levels of electron states in locally chosen surface micrograins of indium antimonide and arsenide and gallium arsenide are studied with a tunneling electron microscope in the field-emission mode of measurements. By correlating the current–voltage characteristics with the formula for the probability of emission via levels, the activation energies of the levels (ψ) and the lifetimes of electrons at the levels (τ) are determined. Two types of levels for electron localization are identified. These are levels in the micrograin bulk (ψ ≈ 0.75, 1.15, and 1.59 eV for n-InSb, n-InAs, and n-GaAs, respectively; τ ~ 10{sup –8}–10{sup –7} s) and in the surface region of an i-InSb micrograin (ψ ~ 0.73, 1.33, 1.85, 2.15, 5.1 eV; τ ≈ 5 × 10{sup –8}–3 × 10{sup –7} s). A physical model involving the Coulomb-interaction-induced localization of light electrons and their size quantization determined by the electron effective mass, energy, and concentration and by the surface curvature of the micrograin is proposed.

  18. GaSb film growth by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Cruz, M.L.; Martinez-Juarez, J.; Lopez-Salazar, P. [CIDS-ICUAP, BUAP, Av. 14 Sur y San Claudio, C.U. Edif.103C, Col. Sn Manuel, C.P. 72570, Puebla, Pue. (Mexico); Diaz, G.J. [Centro de Investigacion y Estudios Avanzados, IPN, Av. IPN 2508, Col. Sn. Pedro Zacatenco, C.P. 07360, D.F. (Mexico)

    2010-04-15

    Doped GaSb (Gallium Antimonide) films on p-GaSb substrates have been obtained by means of a low-cost and fast-growth method: the liquid phase epitaxy (LPE) technique. The growth temperature was 400 C, and the growth time was varied between1 and 5 min. Characterization of the films was performed by means of high resolution X-ray Diffraction, low temperature-photoluminescence and current-voltage curve measurements. The X-ray diffraction pattern confirms a zincblende-type crystal structure with a high-thin peak centred at 30.36 . The PL spectra at 27 K allowed to confirm the band-gap energy to be 0.8 eV and the I-V curves presented a PN junction behavior which corresponds to the obtained structured. Metal contacts of Au-Zn and Au-Ge were placed to perform electrical characterization (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Crystal, magnetic, calorimetric and electronic structure investigation of GdScGe1–x Sb x compounds

    Science.gov (United States)

    Guillou, F.; Pathak, A. K.; Hackett, T. A.; Paudyal, D.; Mudryk, Y.; Pecharsky, V. K.

    2017-12-01

    Experimental investigations of crystal structure, magnetism and heat capacity of compounds in the pseudoternary GdScGe-GdScSb system combined with density functional theory projections have been employed to clarify the interplay between the crystal structure and magnetism in this series of RTX materials (R  =  rare-earth, T   =  transition metal and X  =  p-block element). We demonstrate that the CeScSi-type structure adopted by GdScGe and CeFeSi-type structure adopted by GdScSb coexist over a limited range of compositions 0.65 ≤slant x ≤slant 0.9 . Antimony for Ge substitutions in GdScGe result in an anisotropic expansion of the unit cell of the parent that is most pronounced along the c axis. We believe that such expansion acts as the driving force for the instability of the double layer CeScSi-type structure of the parent germanide. Extensive, yet limited Sb substitutions 0 ≤slant x disappearance of the induced magnetic moments on Sc. For the parent antimonide, heat capacity measurements indicate an additional transition below the main antiferromagnetic transition.

  20. Platinum-group elements fractionation by selective complexing, the Os, Ir, Ru, Rh-arsenide-sulfide systems above 1020 °C

    Science.gov (United States)

    Helmy, Hassan M.; Bragagni, Alessandro

    2017-11-01

    The platinum-group element (PGE) contents in magmatic ores and rocks are normally in the low μg/g (even in the ng/g) level, yet they form discrete platinum-group mineral (PGM) phases. IPGE (Os, Ir, Ru) + Rh form alloys, sulfides, and sulfarsenides while Pt and Pd form arsenides, tellurides, bismuthoids and antimonides. We experimentally investigate the behavior of Os, Ru, Ir and Rh in As-bearing sulfide system between 1300 and 1020 °C and show that the prominent mineralogical difference between IPGE (+Rh) and Pt and Pd reflects different chemical preference in the sulfide melt. At temperatures above 1200 °C, Os shows a tendency to form alloys. Ruthenium forms a sulfide (laurite RuS2) while Ir and Rh form sulfarsenides (irarsite IrAsS and hollingworthite RhAsS, respectively). The chemical preference of PGE is selective: IPGE + Rh form metal-metal, metal-S and metal-AsS complexes while Pt and Pd form semimetal complexes. Selective complexing followed by mechanical separation of IPGE (and Rh)-ligand from Pt- and Pd-ligand associations lead to PGE fractionation.

  1. Synthesis, crystallographic and magnetic properties of protactinium pnictides

    International Nuclear Information System (INIS)

    Hery, Yves.

    1979-03-01

    From a theoretical point of view, protactinium lies in a very important place in the periodic system for it seems to be the first element of the actinide series where the 5f state is occupied. We have studied protactinium pnictides, particularly arsenides and antimonides. PaAs 2 , Pa 3 As 4 , PaSb 2 and Pa 3 Sb 4 were synthetized and their crystallographic properties were determined and discussed. We have measured the magnetic susceptibilities of PaC, PaAs 2 and PaSb 2 . Protactinium exhibits a dual character. In its monocarbide, which is a weakly diamagnet, it behaves as a transition element while in the temperature independent paramagnets PaAs 2 and PaSb 2 , it behaves like a 'f' element. This 'f' element character increases with increasing metal-metal distances. Furthermore the radial expansion of the protactinium 5f orbital seems to be more important than the Uranium one, and consequently the corresponding protactinium 5f electrons are less localized. In addition, some protactinium chalcogenides (βPaS 2 , γPaSe 2 and PaOSe) have been identified [fr

  2. Achievements in the field of thermophysics of pniktides and chalcogenides of transition elements

    International Nuclear Information System (INIS)

    Westrum, E.F.

    1979-01-01

    Thermophysical aspects of thermodynamics of chalcogenides of transition metals are analyzed briefly with the aim of development of concepts on connection of these compounds entropy with their structure, expressed by Grenvold and Westrum in 1962. In a more detail way discussed are the achievement in the field of low-temperature thermophysics of pniktides of transition metals permitting to consider the similarity and the differences in properties of the two compound classes mentioned above. The characteristics of chalcogenides and pniktides, obtained by the method of low-temperature calorimetry and by the method of high-temperature adiabatic calorimetry as well, are considered. A more detail estimate is made of the heat capacity component caused by expansion (that is of the most importance while considering the high-temperature data on heat capacity). The effect of energy levels of ions and atoms on heat capacity and a number of other problems are also considered. The approach to solution of these problems is illustrated on experimental data for a number of compounds, such as marcasite (FeS 2 ), low-temperature digenite (Csub(1.80)S), CoFe 2 , arsenides and antimonides of a number of metals (FeSb 2 , CrSb 2 , CrAs 2 , U 2 As 4 , U 3 Sb 4 , USb 2 , UAs 2 )

  3. Andreev molecules in semiconductor nanowire double quantum dots.

    Science.gov (United States)

    Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

    2017-09-19

    Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

  4. Study of the Local Environment of Mn Ions Implanted in GaSb

    International Nuclear Information System (INIS)

    Wolska, A.; Lawniczak-Jablonska, K.; Klepka, M.T.; Barcz, A.; Hallen, A.; Arvanitis, D.

    2010-01-01

    The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation. (author)

  5. Effect of AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si(001) substrate

    International Nuclear Information System (INIS)

    Mori, M.; Murata, K.; Fujimoto, N.; Tatsuyama, C.; Tambo, T.

    2007-01-01

    Aluminum antimonide (AlSb) layers with various thickness ranged from about 8 to 250 nm were grown at 520 deg. C as the buffer layer for the heteroepitaxial growth of InSb films on Si(001) substrates. InSb films were grown at 400 deg. C on the AlSb/Si(001), and were characterized by X-ray diffraction (XRD), atomic force microscope, as a function of the thickness of the AlSb layer. The XRD patterns of the InSb films grown on the AlSb layers show that even if the AlSb buffer layer, whose surface consists of many islands, is as thin as 8 nm, it is effective for the heteroepitaxial growth of InSb film on a Si(001) substrate, and the AlSb layer of about 40 nm is thick enough to grow heteroepitaxial InSb films on the Si(001) substrate. The results of the φ scan patterns of the films show that InSb films on a Si(001) substrate with AlSb buffer layer were heteroepitaxially grown without any rotation in the growth plane

  6. Dispersion relations in heavily-doped nanostructures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2016-01-01

    This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also disc...

  7. Fowler-Nordheim field emission effects in semiconductor nanostructures

    CERN Document Server

    Bhattacharya, Sitangshu

    2012-01-01

    This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The boo...

  8. Behavior of GaSb (100) and InSb (100) surfaces in the presence of H{sub 2}O{sub 2} in acidic and basic cleaning solutions

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr

    2017-03-31

    Highlights: • Surface behavior of GaSb and InSb was investigated in acidic and basic solutions. • H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic hydrochloric acid/hydrogen peroxide mixture (HPM) solution. • GaSb and InSb surfaces were hardly oxidized in basic ammonium hydroxide/hydrogen peroxide mixture (APM) solution in the presence of H{sub 2}O{sub 2}. • The effect of dilution of APM solution on the oxidation of the InSb surface was minimal. • Surface characteristics of GaSb and InSb in HPM and APM solutions are mainly determined by the behaviors of the group III elements rather than the group V element. - Abstract: Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III–V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H{sub 2}O{sub 2} because gallium and indium are in the thermodynamically stable forms of H{sub 2}GaO{sub 3}{sup −} and InO{sub 2}{sup −}, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H{sub 2}O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of In

  9. Segregation of antimony in InP in MOVPE

    International Nuclear Information System (INIS)

    Weeke, Stefan

    2008-01-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  10. Segregation of antimony in InP in MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Weeke, Stefan

    2008-07-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  11. Advanced photovoltaic power systems using tandem GaAs/GaSb concentrator modules

    Science.gov (United States)

    Fraas, L. M.; Kuryla, M. S.; Pietila, D. A.; Sundaram, V. S.; Gruenbaum, P. E.; Avery, J. E.; Dihn, V.; Ballantyne, R.; Samuel, C.

    1992-01-01

    In 1989, Boeing announced the fabrication of a tandem gallium concentrator solar cell with an energy conversion efficiency of 30 percent. This research breakthrough has now led to panels which are significantly smaller, lighter, more radiation resistant, and potentially less expensive than the traditional silicon flat plate electric power supply. The new Boeing tandem concentrator (BTC) module uses an array of lightweight silicone Fresnel lenses mounted on the front side of a light weight aluminum honeycomb structure to focus sunlight onto small area solar cells mounted on a thin back plane. This module design is shown schematically. The tandem solar cell in this new module consists of a gallium arsenide light sensitive cell with a 24 percent energy conversion efficiency stacked on top of a gallium antimonide infrared sensitive cell with a conversion efficiency of 6 percent. This gives a total efficiency 30 percent for the cell-stack. The lens optical efficiency is typically 85 percent. Discounting for efficiency losses associated with lens packing, cell wiring, and cell operating temperature still allows for a module efficiency of 22 percent which leads to a module power density of 300 Watts/sq. m. This performance provides more than twice the power density available from a single crystal silicon flat plate module and at least four times the power density available from amorphous silicon modules. The fact that the lenses are only 0.010 ft. thick and the aluminum foil back plane is only 0.003 ft. thick leads to a very lightweight module. Although the cells are an easy to handle thickness of 0.020 ft., the fact that they are small, occupying one-twenty-fifth of the module area, means that they add little to the module weight. After summing all the module weights and given the high module power, we find that we are able to fabricate BTC modules with specific power of 100 watts/kg.

  12. Synchronized high speed scanning infrared spectrometer.

    Science.gov (United States)

    Camm, J C; Taylor, R L; Lynch, R

    1967-05-01

    A spectrometer which scans a wavelength band of 0.6 micro in 30 microsec and is useful from 2-6 micro is described. The instrument can be synchronized with a pulsed source with a minimum triggering delay of 15microsec. The instrument is basically an Ebert spectrometer equipped with an indium antimonide detector at the exit slit, an aluminum scanning mirror placed 5 cm before the exit slit, and a wavelength calibration signal generator. The scanning mirror, which is supported on pivots inside a helical coil, deflects the spectrum through an angle of approximately 90 degrees onto the exit slit. When a capacitor is discharged through the coil, the resulting magnetic field spins the aluminum mirror causing the spectrum to move across the exit slit. The wavelength calibration signal generator produces a series of electrical pulses as the scanning mirror turns, permitting wavelength calibration when the pulses are displayed below the spectrometer signal on a dual beam oscilloscope. Using this instrument on a shock tube, data have bee obtained on the absolute spectral radiation intensity of air, nitrogen, neon, and argon heated by reflected shocks to equilibrium temperatures in the range of 6000 degrees K to 10,000 degrees K. In this temperature region with these gases, an important source of continuum radiation is neutral Bremsstrahlung caused by the inelastic scattering of electrons from neutral atoms and molecules. By employing the scanning ir spectrometer it has been possible to separate the continuum radiation from contributions owing to lines and bands and determine the cross section for the neutral Bremsstrahlung.

  13. The Added Value of Infrared Thermography in the Measurement of Temperature-stress Coupled Effects

    Directory of Open Access Journals (Sweden)

    Simone BOCCARDI

    2016-05-01

    Full Text Available The attention of the present paper is focused on the use of infrared thermography to measure the very small temperature variations which are linked to thermo- elastic effects. Hereafter, the latter are associated with material volume variations undergone by a cantilever beam under cyclic bending load. This is a difficult task since the temperature variations can be very small and at the edge of the instrument resolution. The task creates the problem of the infrared camera choice since the sensor should have high thermal sensitivity and low noise, which may be almost impossible to achieve. In fact, a quantum well infrared photodetector (QWIP is well suited for sensing the small thermal radiation associated with thermo-elastic phenomena, but it is affected by noise, mainly dark current effects, which can be of the same order of magnitude of the quantity to be measured. However, with the aid of a reference sample (reference-area method it is possible to eliminate most of the instrumental and environmental noise so as to obtain reliable measurements. This method allows extending the use of an infrared imaging device outside its stated resolution range and has been proposed and described in previous work. The intention now is to better validate the reference-area method as applied to a QWIP detector, an indium antimonide (InSb detector and a microbolometer one, also with the aid of a black body. Indeed, the method represents a simple noise correction approach to be used with any detector and which may open the door to a wider exploitation of remote infrared imaging devices.

  14. Effect of intense laser irradiation on the lattice stability of InSb

    Energy Technology Data Exchange (ETDEWEB)

    Wang, M.M.; Gao, T.; Yu, Y. [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Zeng, X.W. [School of Civil Engineering and Transportation, South China University of Technology, Guangzhou, Guangdong 510640 (China)

    2012-01-15

    Indium Antimonide (InSb) has been used in semi-conductor detectors, so investigating the structural, electronic and lattice dynamical properties of InSb is of considerable practical interest. We have performed an ab initio study of electronic and dynamical properties of the zinc-blende InSb at different electronic temperatures. The calculations have been carried out within the density-functional theory and linear-response formalism using norm-conserving pseudopotentials and a plane-wave basis. The calculated direct band gap is seen to be 0.1 eV, which is underestimated with the experimental value of 0.18 eV. As the electronic temperature increases, the results indicate that the InSb undergoes a melting transition to a metallic state. The transverse acoustic modes of the InSb are found to be negative in the most part of the Brillouin zone (BZ) which leads to lattice dynamical instability at electronic temperature of 0.75 eV as indicated by imaginary phonon frequencies. Moreover, for optical modes, there exists a LO-TO (Longitudinal Optical and Transverse Optical) splitting at the zone-center ({Gamma} point) when T{sub e} = 0 eV and the frequencies are LO = 190.5 cm{sup -1}, TO = 182.4 cm{sup -1}, respectively; however, the LO-TO splitting will disappear when T{sub e} > 0 eV. The calculated values are in reasonable agreement with available experimental and theoretical data. (authors)

  15. Power and hydrogen production from ammonia in a micro-thermophotovoltaic device integrated with a micro-reformer

    International Nuclear Information System (INIS)

    Um, Dong Hyun; Kim, Tae Young; Kwon, Oh Chae

    2014-01-01

    Power and hydrogen (H 2 ) production by burning and reforming ammonia (NH 3 ) in a micro-TPV (microscale-thermophotovoltaic) device integrated with a micro-reformer is studied experimentally. A heat-recirculating micro-emitter with the cyclone and helical adapters that enhance the residence time of fed fuel-air mixtures and uniform burning burns H 2 -added NH 3 -air mixtures. A micro-reformer that converts NH 3 to H 2 using ruthenium as a catalyst surrounds the micro-emitter as a heat source. The micro-reformer is surrounded by a chamber, the inner and outer walls of which have installations of gallium antimonide photovoltaic cells and cooling fins. For the micro-reformer-integrated micro-TPV device the maximum overall efficiency of 8.1% with electrical power of 4.5 W and the maximum NH 3 conversion rate of 96.0% with the H 2 production rate of 22.6 W (based on lower heating value) are obtained, indicating that the overall efficiency is remarkably enhanced compared with 2.0% when the micro-TPV device operates alone. This supports the potential of improving the overall efficiency of a micro-TPV device through integrating it with a micro-reformer. Also, the feasibility of using NH 3 as a carbon-free fuel for both burning and reforming in practical micro power and H 2 generation devices has been demonstrated. - Highlights: • Performance of micro-TPV device integrated with micro-reformer is evaluated. • Feasibility of using NH 3 –H 2 blends in integrated system has been demonstrated. • Integration with micro-reformer improves performance of micro-TPV device. • Maximum overall efficiency of 8.1% is found compared with 2.0% without integration

  16. Enhancing selectivity of infrared emitters through quality-factor matching

    Science.gov (United States)

    Sakr, Enas; Zhou, Zhiguang; Bermel, Peter

    2015-09-01

    It has recently been proposed that designing selective emitters with photonic crystals (PhCs) or plasmonic metamaterials can suppress low-energy photon emission, while enhancing higher-energy photon emission. Here, we will consider multiple approaches to designing and fabricating nanophotonic structures concentrating infrared thermal radiation at energies above a critical threshold. These are based on quality factor matching, in which one creates resonant cavities that couple light out at the same rate that the underlying materials emit it. When this quality-factor matching is done properly, emissivities can approach those of a blackbody, but only within a selected range of thermal photon energies. One potential application is for improving the conversion of heat to electricity via a thermophotovoltaic (TPV) system, by using thermal radiation to illuminate a photovoltaic (PV) diode. In this study, realistic simulations of system efficiencies are performed using finite-difference time domain (FDTD) and rigorous coupled wave analysis (RCWA) to capture both thermal radiation and PV diode absorption. We first consider a previously studied 2D molybdenum photonic crystal with a commercially-available silicon PV diode, which can yield TPV efficiencies up to 26.2%. Second, a 1D-periodic samarium-doped glass emitter with a gallium antimonide (GaSb) PV diode is presented, which can yield efficiencies up to 38.5%. Finally, a 2D tungsten photonic crystal with a 1D integrated, chirped filter and the GaSb PV diode can yield efficiencies up to 38.2%; however, the fabrication procedure is expected to be more challenging. The advantages and disadvantages of each strategy will be discussed.

  17. Microminiature rotary Stirling cryocooler for compact, lightweight, and low-power thermal imaging systems

    Science.gov (United States)

    Filis, Avishai; Bar Haim, Zvi; Pundak, Nachman; Broyde, Ramon

    2009-05-01

    Novel compact and low power consuming cooled infrared thermal imagers as used in gyro-stabilized payloads of miniature unmanned aerial vehicles, Thermal small arms sights and tactical night vision goggles often rely on integral rotary micro-miniature closed cycle Stirling cryogenic engines. Development of EPI Antimonides technology and optimization of MCT technology allowed decreasing in order of magnitudes the level of dark current in infrared detectors thus enabling an increase in the optimal focal plane temperature in excess of 95K while keeping the same radiometric performances as achieved at 77K using regular technologies. Maintaining focal plane temperature in the range of 95K to 110K instead of 77K improves the efficiency of Stirling thermodynamic cycle thus enlarging cooling power and enabling the development of a mini micro cooler similar to RICOR's K562S model which is three times smaller, lighter and more compact than a standard tactical cryocooler like RICOR's K508 model. This cooler also features a new type of ball bearings and internal components which were optimized to fit tight bulk constraints and maintain the required life span, while keeping a low level of vibration and noise signature. Further, the functions of management the brushless DC motor and temperature stabilization are delivered by the newly developed high performance sensorless digital controller. By reducing Dewar Detector thermal losses and increasing the focal plane temperature, longer life time operation is expected as was proved with RICOR's K508 model. Resulting from this development, the RICOR K562S model cryogenic engine consumes 1.2 - 3.0 WDC while operating in the closed loop mode and maintaining the typical focal plane arrays at 200-100K. This makes it compatible with very compact battery packages allowing further reduction of the overall thermal imager weight thus making it comparable with the compatible uncooled infrared thermal imager relying on a microbolometer detector

  18. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Energy Technology Data Exchange (ETDEWEB)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

    2016-12-15

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  19. Synthesis and structural characterization of the Zintl phases Na{sub 3}Ca{sub 3}TrPn{sub 4}, Na{sub 3}Sr{sub 3}TrPn{sub 4}, and Na{sub 3}Eu{sub 3}TrPn{sub 4} (Tr=Al, Ga, In; Pn=P, As, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); Suen, Nian-Tzu [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002 (China); Kunene, Thabiso; Stoyko, Stanislav [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States)

    2017-05-15

    15 new quaternary Zintl phases have been synthesized by solid-state reactions from the respective elements, and their structures have been determined by single-crystal X-ray diffraction. Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) crystallize in the hexagonal crystal system with the non-centrosymmetric space group P6{sub 3}mc (No. 186). The structure represents a variant of the K{sub 6}HgS{sub 4} structure type (Pearson index hP22) and features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. The nominal formula rationalization [Na{sup +}]{sub 3}[E{sup 2+}]{sub 3}[TrPn{sub 4}]{sup 9–} follows the octet rule, suggesting closed-shell configurations for all atoms and intrinsic semiconducting behavior. However, structure refinements for several members hint at disorder and mixing of cations that potentially counteract the optimal valence electron count. - Graphical abstract: The hexagonal, non-centrosymmetric structure of Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. - Highlights: • 15 quaternary phosphides, arsenides, and antimonides are synthesized and structurally characterized. • The structure is a variant of the hexagonal K{sub 6}HgS{sub 4}-type, with distinctive pattern for the cations. • Occupational and/or positional disorder of yet unknown origin exists for some members of the series.

  20. Degradation of Alkali-Based Photocathodes from Exposure to Residual Gases: A First-Principles Study

    International Nuclear Information System (INIS)

    Wang, Gaoxue; Batista, Enrique R.

    2017-01-01

    Photocathodes are a key component in the production of electron beams in systems such as X-ray free-electron lasers and X-ray energy-recovery linacs. Alkali-based materials display high quantum efficiency (QE), however, their QE undergoes degradation faster than metal photocathodes even in the high vacuum conditions where they operate. The high reactivity of alkali-based surfaces points to surface reactions with residual gases as one of the most important factors for the degradation of QE. In order to advance the understanding on the degradation of the QE, we investigated the surface reactivity of common residual gas molecules (e.g., O 2 , CO 2 , CO, H 2 O, N 2 , and H 2 ) on one of the best-known alkali-based photocathode materials, cesium antimonide (Cs 3 Sb), using first-principles calculations based on density functional theory. Furthermore, the reaction sites, adsorption energy, and effect in the local electronic structure upon reaction of these molecules on (001), (110), and (111) surfaces of Cs 3 Sb were computed and analyzed. The adsorption energy of these molecules on Cs3Sb follows the trend of O 2 (-4.5 eV) > CO 2 (-1.9 eV) > H 2 O (-1.0 eV) > CO (-0.8 eV) > N 2 (-0.3 eV) ≈ H 2 (-0.2 eV), which agrees with experimental data on the effect of these gases on the degradation of QE. The interaction strength is determined by the charge transfer from the surfaces to the molecules. The adsorption and dissociation of O containing molecules modify the surface chemistry such as the composition, structure, charge distribution, surface dipole, and work function of Cs 3 Sb, resulting in the degradation of QE with exposure to O 2 , CO 2 , H 2 O, and CO.

  1. Interaction of coal-derived synthesis gas impurities with solid oxide fuel cell metallic components

    Energy Technology Data Exchange (ETDEWEB)

    Marina, Olga A.; Coyle, Christopher A.; Edwards, Danny J.; Chou, Yeong-Shyung; Cramer, Carolyn N. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Pederson, Larry R. [North Dakota State University, Fargo, ND 58102 (United States)

    2011-01-15

    Oxidation-resistant alloys find use as interconnect materials, heat exchangers, and gas supply tubing in solid oxide fuel cell (SOFC) systems, especially when operated at temperatures below {proportional_to}800 C. If fueled with synthesis gas derived from coal or biomass, such metallic components could be exposed to impurities contained in those fuel sources. In this study, coupons of ferritic stainless steels Crofer 22 APU and SS 441, austenitic nickel-chromium superalloy Inconel 600, and an alumina-forming high nickel alloy alumel were exposed to synthesis gas containing {<=}2 ppm phosphorus, arsenic and antimony, and reaction products were tested. Crofer 22 APU coupons coated with a (Mn,Co){sub 3}O{sub 4} protective layer were also evaluated. Phosphorus was found to be the most reactive. On Crofer 22 APU, the (Mn,Cr){sub 3}O{sub 4} passivation layer reacted to form an Mn-P-O product, predicted to be manganese phosphate from thermochemical calculations, and Cr{sub 2}O{sub 3}. On SS 441, reaction of phosphorus with (Mn,Cr){sub 3}O{sub 4} led to the formation of manganese phosphate as well as an Fe-P product, predicted from thermochemical calculations to be Fe{sub 3}P. Minimal interactions with antimony or arsenic in synthesis gas were limited to Fe-Sb and Fe-As solid solution formation. Though not intended for use on the anode side, a (Mn,Co){sub 3}O{sub 4} spinel coating on Crofer 22 APU reacted with phosphorus in synthesis gas to produce products consistent with Mn{sub 3}(PO{sub 4}){sub 2} and Co{sub 2}P. A thin Cr{sub 2}O{sub 3} passivation layer on Inconel 600 did not prevent the formation of nickel phosphides and arsenides and of iron phosphides and arsenides, though no reaction with Cr{sub 2}O{sub 3} was apparent. On alumel, an Al{sub 2}O{sub 3} passivation layer rich in Ni did not prevent the formation of nickel phosphides, arsenides, and antimonides, though no reaction with Al{sub 2}O{sub 3} occurred. This work shows that unprotected metallic components of

  2. Time-resolved X-ray diffraction with accelerator- and laser-plasma-based X-ray sources

    Energy Technology Data Exchange (ETDEWEB)

    Nicoul, Matthieu

    2010-09-01

    Femtosecond X-ray pulses are a powerful tool to investigate atomic motions triggered by femtosecond pump pulses. This thesis is dedicated to the production of such pulses and their use in optical pump - X-ray probe measurement. This thesis describes the laser-plasma-based sources available at the University of Duisburg-Essen. Part of it consists of the description of the design, built-up and characterization of a new ''modular'' X-ray source dedicated to optimize the X-ray flux onto the sample under investigation. The acoustic wave generation in femtosecond optically excited semiconductor (gallium arsenide) and metal (gold) was performed using the sources of the University of Duisburg-Essen. The physical answer of the material was modeled by a simple strain model for the semiconductor, pressure model for the metal, in order to gain information on the interplay of the electronic and thermal pressures rising after excitation. Whereas no reliable information could be obtain in gallium arsenide (principally due to the use of a bulk), the model for gold achieved very good agreement, providing useful information. The relaxation time of the electron to lattice energy was found to be (5.0{+-}0.3) ps, and the ratio of the Grueneisen parameters was found to be {gamma}{sub e} / {gamma}{sub i} = (0.5{+-}0.1). This thesis also describes the Sub-Picosecond Pulse Source (SPPS) which existed at the (formally) Stanford Linear Accelerator Center, an accelerator-based X-ray source, and two measurements performed with it. The first one is the detailed investigation of the phonon softening of the A{sub 1g} mode launch in bismuth upon fluence excitation. Detailed information concerning the new equilibrium position and phonon frequency were obtained over extended laser pump fluences. The second measurement concerned the study of the liquid phase dynamics in a newly formed liquid phase following ultrafast melting in indium antimonide. The formation of the liquid phase

  3. The iron-age of superconductivity: structural correlations and commonalities among the various families having -Fe-Pn- slabs (Pn = P, As and Sb).

    Science.gov (United States)

    Ganguli, Ashok K; Prakash, Jai; Thakur, Gohil S

    2013-01-21

    )Pn(2), AFFePn and A(4)M(2)M'Fe(2)As(2)O(6)etc.) known today and have also included the phosphides and antimonides other than the arsenides. We have in addition discussed in detail the various factors like pressure, hole and electron doping, transition metal doping, which have not been reviewed earlier.

  4. Time-resolved X-ray diffraction with accelerator- and laser-plasma-based X-ray sources

    International Nuclear Information System (INIS)

    Nicoul, Matthieu

    2010-01-01

    Femtosecond X-ray pulses are a powerful tool to investigate atomic motions triggered by femtosecond pump pulses. This thesis is dedicated to the production of such pulses and their use in optical pump - X-ray probe measurement. This thesis describes the laser-plasma-based sources available at the University of Duisburg-Essen. Part of it consists of the description of the design, built-up and characterization of a new ''modular'' X-ray source dedicated to optimize the X-ray flux onto the sample under investigation. The acoustic wave generation in femtosecond optically excited semiconductor (gallium arsenide) and metal (gold) was performed using the sources of the University of Duisburg-Essen. The physical answer of the material was modeled by a simple strain model for the semiconductor, pressure model for the metal, in order to gain information on the interplay of the electronic and thermal pressures rising after excitation. Whereas no reliable information could be obtain in gallium arsenide (principally due to the use of a bulk), the model for gold achieved very good agreement, providing useful information. The relaxation time of the electron to lattice energy was found to be (5.0±0.3) ps, and the ratio of the Grueneisen parameters was found to be γ e / γ i = (0.5±0.1). This thesis also describes the Sub-Picosecond Pulse Source (SPPS) which existed at the (formally) Stanford Linear Accelerator Center, an accelerator-based X-ray source, and two measurements performed with it. The first one is the detailed investigation of the phonon softening of the A 1g mode launch in bismuth upon fluence excitation. Detailed information concerning the new equilibrium position and phonon frequency were obtained over extended laser pump fluences. The second measurement concerned the study of the liquid phase dynamics in a newly formed liquid phase following ultrafast melting in indium antimonide. The formation of the liquid phase and its development for excitations close to the

  5. Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Huffaker, Diana [Univ. of California, Los Angeles, CA (United States); Hubbard, Seth [Rochester Inst. of Technology, NY (United States); Norman, Andrew [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2015-07-31

    This project aimed to develop solar cells that can help reduce cost per watt. This work focused on developing solar cells that utilize quantum dot (QD) nanomaterials to provide multijunction solar cell efficiency at the cost of single junction solar cell. We focused on a novel concept known as intermediate band solar cells (IBSC) where an additional energy band is inserted in a single solar cell to accommodate sub-bandgap photons absorption which otherwise are lost through transmission. The additional energy band can be achieved by growing QDs within a solar cell p-n junction. Though numerous studies have been conducted to develop such QD systems, very small improvements in solar energy conversion efficiency have been reported. This is mainly due to non-optimal material parameters such as band gap, band offset etc. In this work, we identified and developed a novel QD material system that meets the requirements of IBSC more closely than the current state-of-the-art technology. To achieve these goals, we focused on three important areas of solar cell design: band structure calculations of new materials, efficient device design for high efficiency, and development of new semiconductor materials. In this project, we focused on III-Sb materials as they possess a wide range of energy bandgaps from 0.2 eV to 2eV. Despite the difficulty involved in realizing these materials, we were successfully developed these materials through a systematic approach. Materials studied in this work are AlAsSb (Aluminum Arsenide Antimonide), InAlAs (Indium Aluminum Arsenide) and InAs (Indium Arsenide). InAs was used to develop QD layers within AlAsSb and InAlAs p-n junctions. As the QDs have very small volume, up to 30 QD layers been inserted into the p-n junction to enhance light absorption. These QD multi-stack devices helped in understanding the challenges associated with the development of quantum dot solar cells. The results from this work show that the quantum dot solar cells indeed

  6. Laser-based sensors on UAVs for quantifying local emissions of greenhouse gases

    Science.gov (United States)

    Zondlo, Mark; Tao, Lei; O'Brien, Anthony; Ross, Kevin; Khan, Amir; Pan, Da; Golston, Levi; Sun, Kang; DiGangi, Josh

    2015-04-01

    well above the surface (up to 100 m). In addition, plumes were very narrow horizontally (10-30 m width) within 200 m of the emission origin. By using a mass balance approach of upwind versus downwind CH4 concentrations, coupled to meteorological wind data, the CH4 emission rate from the compressor station averaged 13 ± 5 g CH4 s-1, consistent with individual, leak surveys measured within the compressor station itself. More recently, we developed a mid-infrared version of the same sensor using an antimonide laser at 3.3 microns. This sensor has a precision of 2 ppbv CH4 at 10 Hz, a mass of 1.3 kg, and consumes 10 W of power. Flight tests show the improved precision is capable of detecting methane leaks from landfills and cattle feedlots at higher altitudes (500 m) and greater distances downwind (several km) than the near infrared CH4 sensor. Sampling strategy is particularly important for not only UAS-based flight patterns but also sensor design. Many tradeoffs exist between the sampling density of the flight pattern, sensor precision, accuracy of wind data, and geographic isolation of the source of interest, and these will be discussed in the context of airborne-based CH4 measurements in the field. The development of compact yet robust trace gas sensors to be deployed on small UAS opens new capabilities for atmospheric sensing such as quantifying local source emissions (e.g. farms, well pads), vertical profiling of trace gases in a forest canopy, and trace gas distributions in complex areas (mountains, urban canyons).

  7. Thin film studies toward improving the performance of accelerator electron sources

    Science.gov (United States)

    Mamun, Md Abdullah Al

    current electron beam applications. The best performing TiN-coated aluminum electrode demonstrated less than 15 pA of field emission current at --175 kV for a 10 mm cathode/anode gap, which corresponds to a field strength of 22.5 MV/m. Third, the effect of antimony thickness on the performance of bialkali-antimonide photocathodes was studied. The high-capacity effusion source enabled us to successfully manufacture photocathodes having a maximum QE around 10% and extended low voltage 1/e lifetime (> 90 days) at 532 nm via the co-deposition method, with relatively thick layers of antimony (≥ 300 nm). We speculate that alkali co-deposition provides optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali. In summary, this research examined the effectiveness of thin films applied on photogun chamber components to achieve an extremely high vacuum, to eliminate high voltage induced field emission from electrodes, and to generate photocurrent with high quantum yield with an extended operational lifetime. Simultaneous implementation of these findings can meet the challenges of future ultra-bright photoguns.

  8. Mid-Infrared Reflectance Imaging of Thermal-Barrier Coatings

    Science.gov (United States)

    Edlridge, Jeffrey I.; Martin, Richard E.

    2009-01-01

    An apparatus for mid-infrared reflectance imaging has been developed as means of inspecting for subsurface damage in thermal-barrier coatings (TBCs). The apparatus is designed, more specifically, for imaging the progression of buried delamination cracks in plasma-sprayed yttria-stabilized zirconia coatings on turbine-engine components. Progression of TBC delamination occurs by the formation of buried cracks that grow and then link together to produce eventual TBC spallation. The mid-infrared reflectance imaging system described here makes it possible to see delamination progression that is invisible to the unaided eye, and therefore give sufficiently advanced warning before delamination progression adversely affects engine performance and safety. The apparatus (see figure) includes a commercial mid-infrared camera that contains a liquid-nitrogen-cooled focal plane indium antimonide photodetector array, and imaging is restricted by a narrow bandpass centered at wavelength of 4 microns. This narrow wavelength range centered at 4 microns was chosen because (1) it enables avoidance of interfering absorptions by atmospheric OH and CO2 at 3 and 4.25 microns, respectively; and (2) the coating material exhibits maximum transparency in this wavelength range. Delamination contrast is produced in the midinfrared reflectance images because the introduction of cracks into the TBC creates an internal TBC/air-gap interface with a high diffuse reflectivity of 0.81, resulting in substantially higher reflectance of mid-infrared radiation in regions that contain buried delamination cracks. The camera is positioned a short distance (.12 cm) from the specimen. The mid-infrared illumination is generated by a 50-watt silicon carbide source positioned to the side of the mid-infrared camera, and the illumination is collimated and reflected onto the specimen by a 6.35-cm-diameter off-axis paraboloidal mirror. Because the collected images are of a steady-state reflected intensity (in

  9. Material Engineering for Phase Change Memory

    Science.gov (United States)

    Cabrera, David M.

    As semiconductor devices continue to scale downward, and portable consumer electronics become more prevalent there is a need to develop memory technology that will scale with devices and use less energy, while maintaining performance. One of the leading prototypical memories that is being investigated is phase change memory. Phase change memory (PCM) is a non-volatile memory composed of 1 transistor and 1 resistor. The resistive structure includes a memory material alloy which can change between amorphous and crystalline states repeatedly using current/voltage pulses of different lengths and magnitudes. The most widely studied PCM materials are chalcogenides - Germanium-Antimony-Tellerium (GST) with Ge2Sb2Te3 and Germanium-Tellerium (GeTe) being some of the most popular stochiometries. As these cells are scaled downward, the current/voltage needed to switch these materials becomes comparable to the voltage needed to sense the cell's state. The International Roadmap for Semiconductors aims to raise the threshold field of these devices from 66.6 V/mum to be at least 375 V/mum for the year 2024. These cells are also prone to resistance drift between states, leading to bit corruption and memory loss. Phase change material properties are known to influence PCM device performance such as crystallization temperature having an effect on data retention and litetime, while resistivity values in the amorphous and crystalline phases have an effect on the current/voltage needed to write/erase the cell. Addition of dopants is also known to modify the phase change material parameters. The materials G2S2T5, GeTe, with dopants - nitrogen, silicon, titanium, and aluminum oxide and undoped Gallium-Antimonide (GaSb) are studied for these desired characteristics. Thin films of these compositions are deposited via physical vapor deposition at IBM Watson Research Center. Crystallization temperatures are investigated using time resolved x-ray diffraction at Brookhaven National Laboratory

  10. Gamma-Ray Bursts: Lighting Up the High-Redshift Universe

    Science.gov (United States)

    Toy, Vicki Louise

    overlapping NHI and redshift ranges, our GRB-DLA galaxies have much larger SFRs than the QSO-DLA host galaxy sample; this may suggest that the QSO-DLA and GRB-DLA galaxy populations are different. We also compare star formation efficiencies to the local Universe and simulations at z = 3. A large portion of this thesis has focused on the development of a new ground- based GRB afterglow follow-up instrument, the Rapid infrared IMAger-Spectrometer (RIMAS), that will target high-redshift GRB afterglows to study early galaxy envi- ronments. RIMAS covers 0.97-2.37 mum and can simultaneously observe two band-passes in any observing mode: photometry, low-resolution spectroscopy (R ˜ 30), or high-resolution spectroscopy (R ˜ 4000). In particular, this thesis focuses on RIMAS's three detectors: two science grade Teledyne HgCdTe Astronomy Wide Area Infrared Imager with 2K x 2K, Reference Pixels and Guide Mode (H2RG) and a slit-viewer Spitzer Legacy Indium-Antimonide (InSb) array. We describe the detector hardware and characterization in detail and discuss general infrared detector troubleshooting methods at both cryogenic and room temperatures. Several software packages have been developed for RIMAS throughout this thesis work. We introduce RIMAS's quick reduction pipeline that takes raw images from a single acquisition and returns a single result frame. We then present a generalized data reduction pipeline that we have tested on two currently operational photometers. We also describe our detailed and realistic RIMAS throughput models for all three observing modes as well as our online observer calculators with these throughput models. All of our data products are open source and are publicly available on Github repositories with detailed documentation.

  11. As, Bi, Hg, S, Sb, Sn and Te geochemistry of the J-M Reef, Stillwater Complex, Montana: constraints on the origin of PGE-enriched sulfides in layered intrusions

    Science.gov (United States)

    Zientek, M.L.; Fries, T.L.; Vian, R.W.

    1990-01-01

    The J-M Reef is an interval of disseminated sulfides in the Lower Banded series of the Stillwater Complex that is enriched in the platinum group elements (PGE). Palladium and Pt occur in solid solution in base-metal sulfides and as discrete PGE minerals. PGE minerals include sulfides, tellurides, arsenides, antimonides, bismuthides, and alloys with Fe, Sn, Hg, and Au. Several subpopulations can be delineated based on whole-rock chemical analyses for As, Bi, Cu, Hg, Pd, Pt, S, Sb and Te for samples collected from and adjacent to the J-M Reef. In general, samples from within the reef have higher Pt/Cu, Pd/Cu, Pd/Pt, Te/Bi and S/(Te+Bi) than those collected adjacent to the reef. Vertical compositional profiles through the reef suggest that Pd/Cu and Pt/Cu decrease systematically upsection from mineralized to barren rock. The majority of samples with elevated As, Sb and Hg occur adjacent to the reef, not within it, or in sulfide-poor rocks. Neither magma mixing nor fluid migration models readily explain why the minor quantities of sulfide minerals immediately adjacent to the sulfide-enriched layers that form the J-M Reef have different element ratios than the sulfide minerals that form the reef. If all the sulfides formed by exsolution during a magma mixing event and the modal proportion of sulfide now in the rocks are simply the result of mechanical processes that concentrated the sulfides into some layers and not others, then the composition of the sulfide would not be expected to be different. Models that rely upon ascending liquids or fluids are incompatible with the presence of sulfides that are not enriched in PGE immediately below or interlayered with the PGE-enriched sulfides layers. PGE-enriched postcumulus fluids should have reacted to the same extent with sulfides immediately outside the reef as within the reef. One explanation is that some of the sulfide minerals in the rocks outside the reef have a different origin than those that make up the reef. The

  12. Thin film studies toward improving the performance of accelerator electron sources

    Energy Technology Data Exchange (ETDEWEB)

    Mamun, Md Abdullah [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Old Dominion Univ., Norfolk, VA (United States)

    2016-05-31

    the task of implementing photocathode cooling, which is required for future high current electron beam applications. The best performing TiN-coated aluminum electrode demonstrated less than 15 pA of field emission current at -- 175 kV for a 10 mm cathode/anode gap, which corresponds to a field strength of 22.5 MV/m. Third, the effect of antimony thickness on the performance of bialkali-antimonide photocathodes was studied. The high-capacity effusion source enabled us to successfully manufacture photocathodes having a maximum QE around 10% and extended low voltage 1/e lifetime (> 90 days) at 532 nm via the co-deposition method, with relatively thick layers of antimony (≥ 300 nm). We speculate that alkali co-deposition provides optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali. In summary, this research examined the effectiveness of thin films applied on photogun chamber components to achieve an extremely high vacuum, to eliminate high voltage induced field emission from electrodes, and to generate photocurrent with high quantum yield with an extended operational lifetime. Simultaneous implementation of these findings can meet the challenges of future ultra-bright photoguns.