Sample records for antimonides

  1. Growth and characterization of indium antimonide and gallium antimonide crystals

    Indian Academy of Sciences (India)

    N K Udayashankar; H L Bhat


    Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.

  2. Near atomically smooth alkali antimonide photocathode thin films

    CERN Document Server

    Feng, Jun; Nasiatka, James; Schubert, Susanne; Smedley, John; Padmore, Howard


    Nano-roughness limits the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. However there is an urgent need for photocathodes that can produce an order of magnitude or more lower emittance than present day systems in order to increase the transverse coherence width of the electron beam. In this paper we demonstrate a method for producing alkali antimonide cathodes with near atomic smoothness with high reproducibility.

  3. Temperature Dependent Ultrasonic Study in Scandium Antimonide Semiconductor

    Directory of Open Access Journals (Sweden)

    A. K. Gupta


    Full Text Available In this paper analysis of wave propagation of elastic wave in scandium antimonide semiconductor was investigated. In scandium antimonide semiconductor, NaCl structure was found. Ultrasonic properties like ultrasonic attenuation, sound velocities, acoustic coupling constants, and thermal relaxation time have been investigated in cubic scandium antimonide semiconductor. Second and third order elastic constant have been computed for the evaluation of above said ultrasonic properties. Second and third elastic constant was studied at the various temperatures. Longitudinal and shear velocity was calculated by using the elastic constant. Longitudinal and shear velocity increase with increase the temperature. Ultrasonic attenuation either from longitudinal or shear wave propagation in cubic materials increase with increase the temperature.

  4. Kinetic Study of MOCVD Ⅲ-Ⅴ Quaternary Antimonides

    Institute of Scientific and Technical Information of China (English)


    The kinetics of MOCVD GaInAsSb and AlGaAsSb was studied by the growth rate as a function of growth temperature and partial pressure of Ⅲ and Ⅴ MO species. The diffusion theory was used to explain the mass transport processes in MOCVD Ⅲ-Ⅴ quaternary antimonides. On the basis of the discussion about their growth kinetics and epilayer properties, the good quality multi-epilayers of these two quaternary antimonides and their photodetectors and arrays with wavelength of 1.8~2.3 μm and detectivities of D*>109 cm Hz1/2 W-1 were obtained.

  5. Indium Antimonide Nanowires: Synthesis and Properties (United States)

    Shafa, Muhammad; Akbar, Sadaf; Gao, Lei; Fakhar-e-Alam, Muhammad; Wang, Zhiming M.


    This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs-Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

  6. Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications

    Energy Technology Data Exchange (ETDEWEB)

    Saroop, Sudesh [Rensselaer Polytechnic Inst., Troy, NY (United States)


    Recombination processes in antimonide-based (TPV) devices have been investigated using a technique, in which a Nd-YAG pulsed laser is materials for thermophotovoltaic radio-frequency (RF) photoreflectance used to excite excess carriers and the short-pulse response and photoconductivity decay are monitored with an inductively-coupled non-contacting RF probe. The system has been used to characterize surface and bulk recombination mechanisms in Sb-based materials.

  7. Antimonide-based membranes synthesis integration and strain engineering (United States)

    Anwar, Farhana; Klein, Brianna A.; Rasoulof, Amin; Dawson, Noel M.; Schuler-Sandy, Ted; Deneke, Christoph F.; Ferreira, Sukarno O.; Cavallo, Francesca; Krishna, Sanjay


    Antimonide compounds are fabricated in membrane form to enable materials combinations that cannot be obtained by direct growth and to support strain fields that are not possible in the bulk. InAs/(InAs,Ga)Sb type II superlattices (T2SLs) with different in-plane geometries are transferred from a GaSb substrate to a variety of hosts, including Si, polydimethylsiloxane, and metal-coated substrates. Electron microscopy shows structural integrity of transferred membranes with thickness of 100 nm to 2.5 μm and lateral sizes from 24×24μm2 to 1×1 cm2. Electron microscopy reveals the excellent quality of the membrane interface with the new host. The crystalline structure of the T2SL is not altered by the fabrication process, and a minimal elastic relaxation occurs during the release step, as demonstrated by X-ray diffraction and mechanical modeling. A method to locally strain-engineer antimonide-based membranes is theoretically illustrated. Continuum elasticity theory shows that up to ∼3.5% compressive strain can be induced in an InSb quantum well through external bending. Photoluminescence spectroscopy and characterization of an IR photodetector based on InAs/GaSb bonded to Si demonstrate the functionality of transferred membranes in the IR range. PMID:27986953

  8. Application of antimonide diode lasers in photoacoustic spectroscopy. (United States)

    Schilt, Stéphane; Vicet, Aurore; Werner, Ralph; Mattiello, Mario; Thévenaz, Luc; Salhi, Abdelmajid; Rouillard, Yves; Koeth, Johannes


    First investigations of photoacoustic (PA) spectroscopy (PAS) of methane using an antimonide semiconductor laser are reported. The laser fabrication is made in two steps. The structure is firstly grown by molecular beam epitaxy, then a metallic distributed-feedback (DFB) grating is processed. The laser operates at 2371.6 nm in continuous wave and at room temperature. It demonstrates single-mode emission with typical tuning coefficients of 0.04 nm mA(-1) and 0.2 nm K(-1). PA detection of methane was performed by coupling this laser into a radial PA cell. A detection limit of 20 ppm has been achieved in a preliminary configuration that was not optimised for the laser characteristics.

  9. Study on actinoid isolation by antimonide ion exchanger

    Energy Technology Data Exchange (ETDEWEB)

    Tsuji, Masamichi [Tokyo Inst. of Tech. (Japan). Faculty of Science; Kubota, Masumitsu; Yamagishi, Isao


    To establish a containment of long-life nuclides and an effective reduction of waste volume is important to reduce the loadings on the natural environment. Chemical isolation of radioactive nuclides from wastes was attempted by using inorganic ion exchanger with high specificity and thermal stability. In this study, titanium antimonide was used as an ion exchanger to investigate the adsorption of trivalent metallic ions according to Kielland plot curves. When the ionic equivalent fraction (X-bar{sub M}) was around 0.005, Kielland plot curve of either of 3-valent metallic ions was bent, suggesting the exchanger had two different adsorption sites. The slope of the curve became smaller as an elevation of temperature. These results show that the ion radius was decreased resulting from partial elimination of the hydrated water of ion and thus, the steric conditions around the exchange site might be improved. (M.N.)

  10. Power Generation by Zinc Antimonide Thin Film under Various Load Resistances at its Critical Operating Temperature

    DEFF Research Database (Denmark)

    Mir Hosseini, Seyed Mojtaba; Rezaniakolaei, Alireza; Rosendahl, Lasse Aistrup

    thin films operating under different load resistances at around its critical operating temperature, 400 ᵒC. The thermoelement is subjected to constant hot side temperature and to room temperature at the cold junction in order to measure the thin film TEG’s sample performance. The nominal loads equal......Thermoelectric generators (TEGs) use the Seebeck effect in semiconductors for direct conversion of heat to electrical energy. Zinc antimonide films were deposited on polished fused silica substrates by co-sputtering method in Aarhus University. This study focuses on stability of zinc antimonide...

  11. Experimental Investigation of Zinc Antimonide Thin Films under Different Thermal Boundary Conditions

    DEFF Research Database (Denmark)

    Mir Hosseini, Seyed Mojtaba; Rosendahl, Lasse Aistrup; Rezaniakolaei, Alireza;

    Zinc antimonide compound ZnxSby is one of the most efficient thermoelectric (TE) materials known at high temperatures regarding to its exceptional low thermal conductivity. For this reason, it continues to be the focus of active research. However, before practical use in actual conditions...

  12. Sensor of hydrostatic pressure based on gallium antimonide microcrystals

    Directory of Open Access Journals (Sweden)

    Druzhinin A. A.


    Full Text Available Currently, silicon and germanium, the most common materials in the production of discrete semiconductor devices and integrated circuits, do not always meet all the requirements to the sensing elements of mechanical quantities sensors. Therefore, it is logical to research the properties of other semiconductor materials that could be used as sensing elements in such sensors. A3B5 semiconductor compounds seem promising for such purpose. Effect of hydrostatic pressure up to 5000 bar on the resistance of n-type antimonide gallium whiskers doped by Se or Te was studied. Coefficient of hydrostatic pressure for this crystals was determined, it equals Kh = (16,5—20,0•10–5 bar–1 at 20°N. Temperature dependence of resistance and coefficient Kh for this crystals in the temperature range ±60°N was studied. Design of the developed hydrostatic pressure sensor based on GaSb whiskers and its characteristics are presented. The possibility to decrease the temperature dependence of sensitive element resistance by mounting GaSb whiskers on the substrates fabricated from materials with different temperature coefficient of expansion was examined. It was shown that mounting of GaSb crystals on Cu substrate gives the optimal result, in this case the temperature coefficient decrease to 0,05%•°N–1, that leads to decrease of output temperature dependence. The main advantages of developed pressure sensor are: the simplified design in comparison with pressure sensors with strain gauges mounted on spring elements; the high sensitivity to pressure that is constant in the wide pressure range; the improvement of sensors metrological characteristics owing to hysteresis absence. The possible application fields of developed sensors are measuring of high and extremely high pressure, chemical and oil industries, measuring of pressure in oil bore-holes, investigation of explosive processes.

  13. Bi-alkali antimonide photocathode growth: An X-ray diffraction study

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, Susanne; Wong, Jared; Feng, Jun; Karkare, Siddharth; Padmore, Howard; Ruiz-Osés, Miguel; Smedley, John; Muller, Erik; Ding, Zihao; Gaowei, Mengjia; Attenkofer, Klaus; Liang, Xue; Xie, Junqi; Kühn, Julius


    Bi-alkali antimonide photocathodes are one of the best known sources of electrons for high current and/or high bunch charge applications like Energy Recovery Linacs or Free Electron Lasers. Despite their high quantum efficiency in visible light and low intrinsic emittance, the surface roughness of these photocathodes prohibits their use as low emittance cathodes in high accelerating gradient superconducting and normal conducting radio frequency photoguns and limits the minimum possible intrinsic emittance near the threshold. Also, the growth process for these materials is largely based on recipes obtained by trial and error and is very unreliable. In this paper, using X-ray diffraction, we investigate the different structural and chemical changes that take place during the growth process of the bi-alkali antimonide material K2CsSb. Our measurements give us a deeper understanding of the growth process of alkali-antimonide photocathodes allowing us to optimize it with the goal of minimizing the surface roughness to preserve the intrinsic emittance at high electric fields and increasing its reproducibility.

  14. Bi-alkali antimonide photocathode growth: An X-ray diffraction study

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, Susanne; Wong, Jared; Feng, Jun; Karkare, Siddharth; Padmore, Howard; Ruiz-Osés, Miguel; Smedley, John; Muller, Erik; Ding, Zihao; Gaowei, Mengjia; Attenkofer, Klaus; Liang, Xue; Xie, Junqi; Kühn, Julius


    Bi-alkali antimonide photocathodes are one of the best known sources of electrons for high current and/or high bunch charge applications like Energy Recovery Linacs or Free Electron Lasers. Despite their high quantum efficiency in visible light and low intrinsic emittance, the surface roughness of these photocathodes prohibits their use as low emittance cathodes in high accelerating gradient superconducting and normal conducting radio frequency photoguns and limits the minimum possible intrinsic emittance near the threshold. Also, the growth process for these materials is largely based on recipes obtained by trial and error and is very unreliable. In this paper, using X-ray diffraction, we investigate the different structural and chemical changes that take place during the growth process of the bi-alkali antimonide material K2CsSb. Our measurements give us a deeper understanding of the growth process of alkali-antimonide photocathodes allowing us to optimize it with the goal of minimizing the surface roughness to preserve the intrinsic emittance at high electric fields and increasing its reproducibility.

  15. Zirconium transition metal (poly)antimonides. Syntheses, characterization and electrochemical properties

    Energy Technology Data Exchange (ETDEWEB)

    Greiwe, Magnus; Krause, Maximilian; Osters, Oliver; Dorantes, Alma; Piana, Michele; Nilges, Tom [Technische Univ. Muenchen, Garching (Germany). Fachgebiet Synthese und Charakterisierung Innovativer Materialien


    Herein we report on the syntheses, crystal structures and first electrochemical characterizations of ternary zirconium transition metal (poly)antimonides Zr{sub 2}TSb{sub 3} (with T = Cu, Pd) and Zr{sub 3}TSb{sub 7} (with T = Ni, Pd). The compounds were synthesized by arc-melting, followed by an annealing procedure at elevated temperatures. Phase analysis and structure analysis were performed by powder and single-crystal measurements. The electrochemical properties of all compounds were measured in half cells against lithium to test their potential as anode materials for Li batteries. The Zr{sub 3}TSb{sub 7} phases show metallic behavior with conductivities of 10{sup -1} S cm{sup -1} within a temperature range of 324 to 428 K. (orig.)

  16. Defect reactions in gallium antimonide studied by zinc and self-diffusion (United States)

    Sunder, Kirsten; Bracht, Hartmut


    Extrinsic diffusion of zinc (Zn) in gallium antimonide (GaSb) under Ga-rich conditions was analyzed on the basis of the kick-out and the dissociative diffusion mechanism. It is concluded that the changeover of interstitial Zn to substitutional gallium (Ga) sites is mainly mediated by Ga interstitials ( IGa). Fitting of the Zn profiles provides the relative contributions of IGa to Ga diffusion. This contribution is lower than the directly measured Ga diffusion coefficient indicating that Ga diffusion in GaSb is rather mediated by Ga vacancies than by Ga interstitials even under Ga-rich conditions. This finding supports transformation reactions between native point defects that are confirmed by first-principles total-energy calculations. In addition Ga and Sb diffusion experiments under H22 atmosphere were performed to reconcile the controversial data on self-diffusion in GaSb published by Weiler et al. and Bracht et al.

  17. Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices

    Directory of Open Access Journals (Sweden)

    Ella Wassweiler


    Full Text Available The use of gallium antimonide (GaSb is increasing, especially for optoelectronic devices in the infrared wavelengths. It has been demonstrated in gallium nitride (GaN devices operating at ultraviolet (UV wavelengths, that surface textures increase the overall device efficiency. In this work, we fabricated eight different surface textures in GaSb to be used in enhancing efficiency in infrared wavelength devices. Through chemical etching with hydrofluoric acid, hydrogen peroxide, and tartaric acid we characterize the types of surface textures formed and the removal rate of entire layers of GaSb. Through optimization of the etching recipes we lower the reflectivity from 35.7% to 1% at 4 μm wavelength for bare and textured GaSb, respectively. In addition, we simulate surface textures using ray optics in finite element method solver software to provide explanation of our experimental findings.

  18. Electrochemical properties of some cobalt antimonides as anode materials for lithium-ion batteries

    Institute of Scientific and Technical Information of China (English)

    ZHAO Xinbing; CAO Gaoshao; ZHANG Lijuan; XIE Jian


    Some cobalt antimonides have been prepared and studied as the candidate anode materials for lithium ion batteries. Reversible capacities of 424, 423 and 546 mA@h@g -1 were measured at the first cycle for as-solidified CoSb2, CoSb3 and annealed CoSb3 respectively. A low lithium ions diffusion coefficient in the order of 10-16 m 2@s -1 was estimated from the coulometric titration measurements in the annealed CoSb3 electrode. It was found that the electrochemical properties of fine powders are significantly better than coarse powders. However the SEM picture shows that the nano-sized CoSb3powders gathered to larger granules, which worsens somewhat the capacity retention of the nano-sized materials, although the volume capacities of the annealed and ball milled CoSb3 remain near twice of that of graphite after 50 cycles.

  19. Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices (United States)

    Wassweiler, Ella; Toor, Fatima


    The use of gallium antimonide (GaSb) is increasing, especially for optoelectronic devices in the infrared wavelengths. It has been demonstrated in gallium nitride (GaN) devices operating at ultraviolet (UV) wavelengths, that surface textures increase the overall device efficiency. In this work, we fabricated eight different surface textures in GaSb to be used in enhancing efficiency in infrared wavelength devices. Through chemical etching with hydrofluoric acid, hydrogen peroxide, and tartaric acid we characterize the types of surface textures formed and the removal rate of entire layers of GaSb. Through optimization of the etching recipes we lower the reflectivity from 35.7% to 1% at 4 μm wavelength for bare and textured GaSb, respectively. In addition, we simulate surface textures using ray optics in finite element method solver software to provide explanation of our experimental findings.

  20. Study of swift (100 MeV) Fe{sup 9+} ion irradiated gallium antimonide

    Energy Technology Data Exchange (ETDEWEB)

    Jadhav, Vidya [Department of Physics, University of Mumbai, Santacruz (E), Mumbai 400 098 (India); Dubey, S.K. [Department of Physics, University of Mumbai, Santacruz (E), Mumbai 400 098 (India)], E-mail:; Dubey, R.L.; Tripathi, S.; Yadav, A.D.; Gupta, S.J. [Department of Physics, University of Mumbai, Santacruz (E), Mumbai 400 098 (India); Gundu Rao, T.K. [SAIF, Indian Institute of Technology, Powai, Mumbai 400 076 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)


    The effect of 100 MeV irradiation of iron ions in p-type gallium antimonide for ion fluences varying from 1 x 10{sup 11} to 5 x 10{sup 13} cm{sup -2} was investigated using Raman scattering, Fourier transform infrared and X-ray diffraction measurements. Raman spectra showed a strong peak at 232.82 cm{sup -1} (LO) and a weak peak at 223.79 cm{sup -1} (TO). The peaks were shifted towards higher wave number compared to non-irradiated sample indicating the presence of stress in the irradiated samples. The increase of optical absorbance of samples irradiated with different fluences indicates the increase in the amount of disorder and defect concentrations with fluence. The intensity of the XRD peak (2{theta} = 61.07 degree) of the irradiated samples for (4 0 0) reflections was found to decrease with ion fluence.

  1. Operation of integrating indium antimonide linear arrays at 65 K and below (United States)

    Bailey, G. C.; Matthews, K.; Niblack, C. A.


    The combination of a FET switch non-CCD readout architecture with high-quality mesa-photovoltaic indium-antimonide detector material has led to high-performance integrating linear imagers in the 1- to 5-micron region. These devices operate in the temperature regime below 100 K and provide very good dark current and responsivity uniformity (+ or - 2 percent). Test data will show performance at 65 K for a 512-element array and 46 K for a 128-element array. Useful integration times of 3600 seconds at 46 K and greater than 12 seconds at 65 K have been achieved. For both devices, kTC read noise levels of less than 1200 electrons have been measured.

  2. Structural, elastic, electronic and optical properties of bi-alkali antimonides

    Indian Academy of Sciences (India)



    The structural parameters, elastic constants, electronic and optical properties of the bi-alkali antimonides (Na$_2$KSb, Na$_2$RbSb, Na$_2$CsSb, K$_2$RbSb, K$_2$CsSb and Rb$_2$CsSb) were calculated using state-of-the-art density functional theory. Different exchange-correlation potentials were adopted to predict the physical properties of these compounds. The calculated structural parameters are found in good agreement with the available experimental and theoretical results. All the compounds are mechanically stable. The compounds Na$_2$KSb, K$_2$RbSb, K$_2$CsSb and Rb$_2$CsSb have direct bandgaps, in which chemical bonding among the cations and anions is mainly ionic. Furthermore, the optical properties of these compounds are described in detail in terms of the dielectric function, refractive index, reflectivity, optical conductivity and absorption coefficient.

  3. Direct observation of bi-alkali antimonide photocathodes growth via in operando x-ray diffraction studies

    Directory of Open Access Journals (Sweden)

    M. Ruiz-Osés


    Full Text Available Alkali antimonides have a long history as visible-light-sensitive photocathodes. This work focuses on the process of fabrication of the bi-alkali photocathodes, K2CsSb. In-situ synchrotron x-ray diffraction and photoresponse measurements were used to monitor phase evolution during sequential photocathode growth mode on Si(100 substrates. The amorphous-to-crystalline transition for the initial antimony layer was observed at a film thickness of 40 Å . The antimony crystalline structure dissolved upon potassium deposition, eventually recrystallizing upon further deposition into K-Sb crystalline modifications. This transition, as well as the conversion of potassium antimonide to K2CsSb upon cesium deposition, is correlated with changes in the quantum efficiency.

  4. Antimonide-based Geiger-mode avalanche photodiodes for SWIR and MWIR photon counting (United States)

    Duerr, Erik K.; Manfra, Michael J.; Diagne, Mohamed A.; Bailey, Robert J.; Zayhowski, John J.; Donnelly, Joseph P.; Connors, Michael K.; Grzesik, Michael J.; Turner, George W.


    At MIT Lincoln Laboratory, avalanche photodiodes (APDs) have been developed for both 2-μm and 3.4-μm detection using the antimonide material system. These bulk, lattice-matched detectors operate in Geiger mode at temperatures up to 160 K. The 2-μm APDs use a separate-absorber-multiplier design with an InGaAsSb absorber and electron-initiated avalanching in the multiplier. These APDs have exhibited normalized avalanche probability (product of avalanche probability and photo-carrier-injection probability) of 0.4 and dark count rates of ~150 kHz at 77 K for a 30-μm-diameter device. A 1000- element imaging array of the 2-μm detectors has been demonstrated, which operate in a 5 kg dewar with an integrated Stirling-cycle cooler. The APD array is interfaced with a CMOS readout circuit, which provides photon time-of-arrival information for each pixel, allowing the focal plane array to be used in a photon-counting laser radar system. The 3.4-μm APDs use an InAsSb absorber and hole-initiated avalanching and have shown dark count rates of ~500 kHz at 77 K but normalized avalanche probability of < 1%. Research is ongoing to determine the cause of the low avalanche probability and improve the device performance.

  5. Study of optical properties of swift heavy ion irradiated gallium antimonide

    Energy Technology Data Exchange (ETDEWEB)

    Dubey, S.K. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India)]. E-mail:; Dubey, R.L. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Yadav, A.D. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Jadhav, V. [Department of Physics, University of Mumbai, Vidyanagari Campus, Santacruz (E), Mumbai 400 098 (India); Rao, T.K. Gundu [Regional Sophisticated Instrumentation Centre, IIT Bombay, Mumbai 400 076 (India); Mohanty, T. [Nuclear Science Centre, New Delhi 110 067 (India); Kanjilal, D. [Nuclear Science Centre, New Delhi 110 067 (India)


    Gallium antimonide (GaSb) which is a narrow band gap compound semiconductor has received attention because of its potential applications in optoelectronic devices. In the present work, p-type GaSb wafers of <1 0 0> orientation were irradiated with 70 MeV {sup 56}Fe ions at fluences varying from 1 x 10{sup 12} to 1 x 10{sup 14} ions cm{sup -2}. Mid-infrared and Far-infrared Fourier Transform (FT) measurements were carried out to investigate the optical properties of as irradiated and vacuum annealed samples. Mid-infrared Fourier Transform study revealed that the optical absorption of the irradiated samples increases with increasing ion fluence due to increase in irradiation-induced defects. The band gap energy determined from the infrared spectra was found to change from 0.65 to 0.62 eV while for non-irradiated GaSb wafer the corresponding estimate was 0.67 eV. The density of the carrier estimated from the plasma frequency ({omega} {sub p}) was found to vary from 2.05 x 10{sup 18} to 1.9 x 10{sup 18} cm{sup -3}. The samples annealed in vacuum (10{sup -6} mb) over the temperature range 100-600 deg. C showed the significant damage recovery.

  6. Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field (United States)

    Gong, Jiao-Li; Liu, Jin-Song; Chu, Zheng; Yang, Zhen-Gang; Wang, Ke-Jia; Yao, Jian-Quan


    The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide (InSb) and indium arsenide (InAs) in an intense terahertz (THz) field are studied by using the method of ensemble Monte Carlo (EMC) at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 kV/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in InSb, and only 5 THz in InAs, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in InSb, while impact ionization and intervalley scattering work together in InAs. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574105 and 61177095), the Natural Science Foundation of Hubei Province, China (Grant Nos. 2012FFA074 and 2013BAA002), the Wuhan Municipal Applied Basic Research Project, China (Grant No. 20140101010009), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2013KXYQ004 and 2014ZZGH021).

  7. Indium-bump-free antimonide superlattice membrane detectors on a silicon substrates (United States)

    Zamiri, M.; Klein, B.; Schuler, T.; Myers, S.; Cavallo, F.; Krishna, S.


    We present an approach to realize antimonide based superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN based superlattice detectors are grown on top of a 60 nm Al0.6Ga0.4Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxiallift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

  8. Time-resolved X-ray diffraction at monocrystalline indium antimonide; Zeitaufgeloeste Roentgenbeugung an einkristallinem Indiumantimonid

    Energy Technology Data Exchange (ETDEWEB)

    Hoefer, Sebastian


    The present work deals with the experimental study of the structural change of the semiconductor indium antimonide (InSb) after excitation by an ultrashort laser pulse (60 fs). The investigation is carried out by ultra-short X-ray pulses (around 100 fs). As a source for ultrashort X-ray pulses serves a laser plasma X-ray source. With this source, a more intense ultrashort optical laser pulse is focused onto a metal foil (intensity to 8.10{sup 16} W/cm{sup 2}), and by the resulting plasma, there is an emission of X-rays. To characterize the X-ray source a novel Timepix detector was used, which made it possible to detect Bremsstrahlung up to photon energies of 700 keV. The penetration depth of X-rays is usually several micrometers and is thus much greater than the penetration depth of 100 nm of the laser pulse used for excitation. By the use of a highly asymmetric Bragg reflex the penetration depth of X-rays could be adapted to the penetration depth of the excitation pulse. Due to the low penetration depth of 2 ps after excitation an expansion of 4% of a 4 nm thin layer at the surface can already be measured. The excitation of the semiconductor will be described with different models theoretically, the temporal evolution of the deformation obtained therefrom is compared with the performed measurements. [German] Die vorliegende Arbeit behandelt die experimentelle Untersuchung der strukturellen Aenderung des Halbleiters Indiumantimonid (InSB) nach der Anregung durch einen ultrakurzen Laserpuls (60 fs). Die Untersuchung erfolgt durch ultrakurze Roentgenpulse (rund 100 fs). Als Quelle der ultrakurzen Roentgenpulse dient eine Laser-Plasma Roentgenquelle. Bei dieser Quelle wird ein ultrakurzer intensiver optischer Laserpuls auf eine Metallfolie fokussiert (Intensitaet bis 8.10{sup 16} W/cm{sup 2}), durch das entstehende Plasma kommt es zu einer Emission von Roentgenstrahlung. Zur Charakterisierung der Roentgenquelle stand ein neuartiger Timepix- Detektor zu Verfuegung, der

  9. On the formation of phases and their influence on the thermal stability and thermoelectric properties of nanostructured zinc antimonide (United States)

    Balasubramanian, Priyadarshini; Battabyal, Manjusha; Sivaprahasam, Duraiswamy; Gopalan, Raghavan


    To investigate the thermal reliability of the structure and thermoelectric properties of the zinc antimony compounds, undoped (Zn4Sb3) and doped (Zn4Sb2.95Sn0.05 and Co0.05Zn3.95Sb3) zinc antimonide samples were processed using the powder metallurgy route. It was observed that the as-prepared undoped sample contains a pure β-Zn4Sb3 phase, whereas the doped samples consist of Ω-ZnSb as the major phase and β-Zn4Sb3 as the minor phase. Differential scanning calorimetry analysis confirms the stability of the β-Zn4Sb3 phase up to 600 K. X-ray diffraction data of the undoped and doped samples show that the nanocrystallinity of the as-prepared samples is retained after one thermal cycle. The thermal bandgap, thermopower and thermal conductivity are not affected by the thermal cycle for the doped samples. A maximum power factor of 0.6 mW m-1 K-2 was achieved in the Sn-doped sample (Zn4Sb2.95Sn0.05). This is enhanced to 0.72 mW m-1 K-2 after one thermal cycle at 650 K under Ar atmosphere and slightly decreases after the third thermal cycle. In the case of the Co-doped sample (Co0.05Zn3.95Sb3), the power factor increases from 0.4 mW m-1 K-2 to 0.7 mW m-1 K-2 after the third thermal cycle. A figure of merit of ~0.3 is achieved at 573 K in the Zn4Sb2.95Sn0.05 sample. The results from the nanoindentation experiment show that Young’s modulus of the Sn-doped sample (Zn4Sb2.95Sn0.05) after the thermal cycle is enhanced (96 GPa) compared to the as-prepared sample (~76 GPa). These important findings on the thermal stability of the thermoelectric and mechanical properties of Sn-doped samples (Zn4Sb2.95Sn0.05) confirm that Sn-doped zinc antimonide samples can be used as efficient thermoelectric materials for device applications.

  10. The influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors (United States)

    Partin, D. L.; Pelczynski, M.; Cooke, P.; Green, L.; Heremans, J.; Thrush, C. M.


    Indium antimonide magnetoresistors are used as magnetic position sensors in very demanding automotive environments such as crankshaft and camshaft sensors for engine control. The use of tellurium as an n-type dopant was studied using Hall effect measurements up to 200°C, Hall depth profiling, and secondary ion mass spectroscopy. The films were grown by metal organic chemical vapor deposition using trimethyl indium, trisdimethylamino antimony, and diethyl telluride. It was found that the incorporation of tellurium strongly depends upon the V/III ratio during growth, implying that it is influenced by the availability of antimony vacancies. Thus, our results show that the reproducibility of tellurium doping is not limited by memory effects in a well-designed reactor, but by the control of stoichiometry. It is now possible to grow films with optimum doping profile and with good uniformity and reproducibility over hundreds of growth runs. These films can be used to make magnetoresistors that have good sensitivity to a magnetic field and good stability over a wide temperature range.

  11. The crystal structure of a new ternary antimonide: TmCu{sub 4-x}Sb{sub 2} (x 1.065)

    Energy Technology Data Exchange (ETDEWEB)

    Fedyna, L.O. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya str. 6, UA-79005 Lviv (Ukraine); Bodak, O.I. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya str. 6, UA-79005 Lviv (Ukraine)]. E-mail:; Fedorchuk, A.O. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya str. 6, UA-79005 Lviv (Ukraine); Tokaychuk, Ya.O. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya str. 6, UA-79005 Lviv (Ukraine)


    The crystal structure of the new ternary compound TmCu{sub 4-x}Sb{sub 2} (x 1.065) was determined by direct methods from X-ray powder data (diffractometer DRON-3M, Cu K{alpha}-radiation). It crystallizes with the orthorhombic structure type ErFe{sub 4}Ge{sub 2} (low-temperature modification) and is the first representative of this structure type among known antimonides: space group Pnnm, Pearson code oP14-2.13, a = 7.00565(6) A, b = 7.83582(6) A, c = 4.25051(3) A, Z = 2. Investigated structure is an orthorhombically deformed derivative of the ZrFe{sub 4}Si{sub 2} structure type.

  12. A study of the preparation of epitaxy-ready polished surfaces of (100) Gallium Antimonide substrates demonstrating ultra-low surface defects for MBE growth (United States)

    Martinez, Rebecca; Tybjerg, Marius; Flint, Patrick; Fastenau, Joel; Lubyshev, Dmitri; Liu, Amy W. K.; Furlong, Mark J.


    Gallium Antimonide (GaSb) is an important Group III-V compound semiconductor which is suitable for use in the manufacture of a wide variety of optoelectronic devices such as infra-red (IR) focal plane detectors. A significant issue for the commercialisation of these products is the production of epitaxy ready GaSb, which remains a challenge for the substrate manufacturer, as the stringent demands of the MBE process, requires a high quality starting wafer. In this work large diameter GaSb crystals were grown by the Czochralski (Cz) method and wafers prepared for chemo-mechanical polishing (CMP). Innovative epi-ready treatments and novel post polish cleaning methodologies were applied. The effect of these modified finishing chemistries on substrate surface quality and the performance of epitaxially grown MBE GaSb IR detector structures were investigated. Improvements in the lowering of surface defectivity, maintaining of the surface roughness and optimisation of all flatness parameters is confirmed both pre and post MBE growth. In this paper we also discuss the influence of bulk GaSb quality on substrate surface performance through the characterisation of epitaxial structures grown on near zero etch pit density (EPD) crystals. In summary progression and development of current substrate polishing techniques has been demonstrated to deliver a consistent improved surface on GaSb wafers with a readily desorbed oxide for epitaxial growth.

  13. A new family of nonstoichiometric layered rare-earth tin antimonides, RESn{sub x}Sb{sub 2} (RE = La, Ce, Pr, Nd, Sm): Crystal structure of LaSn{sub 0.75}Sb{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ferguson, M.J.; Hushagen, R.W.; Mar, A. [Univ. of Alberta, Edmonton (Canada)


    Rare earth tin antimonides, RESn{sub x}Sb{sub 2} (RE = La, Ce, Pr, Nd, Sm) were synthesized by stoichiometric combination of the elements at high temperature. For the La compound, Sn content was varied from 0.1 {le} x {le} 0.8 and the crystal structure of x = 0.75 is reported. LaSn{sub 0.75}Sb{sub 2} crystallizes in the orthorhombic space group D{sup 17}{sub 2h}-Cmcm.

  14. Characterization of Passivated Indium Antimonide (United States)


    center of each face of the cube (Figure 2.1b). A third type of unit cell is the diamond structure. It is best described as an FCC structure with another...structure of one FCC structure and the Group-III atoms form the structure of the interpenetrating FCC lattice. The total crystal structure is

  15. A New Family of Nonstoichiometric Layered Rare-Earth Tin Antimonides, RESn(x)()Sb(2) (RE = La, Ce, Pr, Nd, Sm): Crystal Structure of LaSn(0.75)Sb(2). (United States)

    Ferguson, Michael J.; Hushagen, Ryan W.; Mar, Arthur


    A new class of nonstoichiometric layered ternary rare-earth tin antimonides, RESn(x)()Sb(2) (RE = La, Ce, Pr, Nd, Sm), has been synthesized through reaction of the elements at 950 degrees C. In the lanthanum series LaSn(x)()Sb(2), tin can be incorporated from a maximum content of x approximately 0.7 or 0.8 to as low as x approximately 0.10. The structure of lanthanum tin diantimonide with the maximum tin content, LaSn(0.75)Sb(2), has been determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group -Cmcm with a = 4.2425(5) Å, b = 23.121(2) Å, c = 4.5053(6) Å, and Z = 4. The isostructural rare-earth analogues were characterized by powder X-ray diffraction. The structure of LaSn(0.75)Sb(2) comprises layers of composition "LaSb(2)" in which La atoms are coordinated by Sb atoms in a square-antiprismatic geometry. Between these layers reside chains of Sn atoms distributed over three crystallographically independent sites, each partially occupied at about 20%. The structure of LaSn(0.75)Sb(2) can be regarded as resulting from the excision of RE-Sb and Sb-Sb bonds in the related structures of binary rare-earth diantimonides, RESb(2), and then intercalation of Sn atoms between layers.

  16. Synthesis and characterisation of (poly-)antimonides and N-doped ZnO; Synthese und Charakterisierung von (Poly-)antimoniden und die Darstellung von N-dotiertem ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Greiwe, Magnus Josef Benedikt


    }Sb{sub y} (M = Hf, Zr) as representatives of binary antimonides were synthesized. Through Fe and/or Ni doping superconducting Phases have been found. Furthermore binary chromium-antimonides with partial Fe or Ni substitution were prepared. Cr{sub 2}Ni{sub 0,3}Sb{sub 3,7} was tested as potential anodic material and a capacity of 98% (520 mAh.g{sup -1}) of the theoretical capacity in the 2{sup nd} cycle was measured. All compounds indicated that antimonies with a covalent bonding character are more stable against lithium intercalation than the intermetallic ones. New compounds in the quaternary system Cu-Hg-Sb-X (X = Br, I) were obtained by using the reaction conditions for the earlier (lighter) elements of the V. main group (P, As). In the new structure [Hg{sub 3}Sb{sub 2}]{sub 4}[CuX{sub 3}]{sub 4}X{sub 2} (X = Br, I) X{sub 2} a barbell of the halide is present. This structure is the first example in the system Hf-Sb-X which shows two different interpenetrated networks: [Hg{sub 3}Sb{sub 2}]{sup 2+} and [CuX{sub 3}]{sup 2-}. For the first time it has been possible to calculate the Br-Br bond length by X-ray single crystal measurements at room temperature. Another topic of this work was to test the solution combustion method (SCM) in order to gain ZnO (Wurtzit structure) with nitrogen defects at the oxygen position. Standard synthesis methods for oxonitrides require high temperature or high pressure procedures. A softer synthesis method is the solution combustion method published by Mapa and Gopinath. The results of various experiments in cooperation with Stefan Soellradl yielded no intercalation of nitrogen defects into ZnO but a new phase was found which is identified as isocyanuric acid after reprocessing.

  17. Antimonide based devices for thermophotovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Hitchcock, C.W.; Gutmann, R.J.; Borrego, J.M.; Bhat, I.B. [Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Integrated Electronics and Electronics Manufacturing; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)


    Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GaInSb ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE) with buffer layers to accommodate the lattice mismatch, and GaInAsSb lattice-matched quaternaries were grown by MOVPE. Improved devices are obtained when optical absorption occurs in the p-layer due to the longer minority carrier diffusion length. Thick emitter p/n devices are limited by surface recombination, with highest quantum efficiency and lowest dark current being achieved with epitaxially grown surface passivation layers on lattice-matched MOVPE quaternaries. Thin emitter/thick base, n/p devices are very promising, but require improved shallow high-quality n-type ohmic contacts. Diffused junction devices using quasi-binary substrates offer the possibility of good performance and low manufacturing cost.

  18. Thermal emittance measurements of a cesium potassium antimonide photocathode (United States)

    Bazarov, Ivan; Cultrera, Luca; Bartnik, Adam; Dunham, Bruce; Karkare, Siddharth; Li, Yulin; Liu, Xianghong; Maxson, Jared; Roussel, William


    Thermal emittance measurements of a CsK2Sb photocathode at several laser wavelengths are presented. The emittance is obtained with a solenoid scan technique using a high voltage dc photoemission gun. The thermal emittance is 0.56±0.03 mm mrad/mm(rms) at 532 nm wavelength. The results are compared with a simple photoemission model and found to be in a good agreement.

  19. Thermal emittance and response time of a cesium antimonide photocathode (United States)

    Cultrera, Luca; Bazarov, Ivan; Bartnik, Adam; Dunham, Bruce; Karkare, Siddharth; Merluzzi, Richard; Nichols, Matthew


    Measurements of the intrinsic emittance and response time of a Cs3Sb photocathode are presented. The emittance is obtained with a solenoid scan technique using a high voltage dc photoemission gun. Photoemission response time is evaluated using a RF deflecting cavity synchronized to a picosecond laser pulse train. We find that Cs3Sb has both small mean transverse energy, 160 ± 10 meV at 532 nm laser wavelength, and a prompt response time (below the resolution of our measurement) making it a suitable material for high brightness electron photoinjectors.

  20. Thermal emittance measurements of a cesium potassium antimonide photocathode

    CERN Document Server

    Bazarov, Ivan; Bartnik, Adam; Dunham, Bruce; Karkare, Siddharth; Li, Yulin; Liu, Xianghong; Maxson, Jared; Roussel, William


    Thermal emittance measurements of a CsK2Sb photocathode at several laser wavelengths are presented. The emittance is obtained with a solenoid scan technique using a high voltage dc photoemission gun. The thermal emittance is 0.56+/-0.03 mm-mrad/mm(rms) at 532 nm wavelength. The results are compared with a simple photoemission model and found to be in a good agreement.

  1. Cold electron beams from cryo-cooled, alkali antimonide photocathodes

    CERN Document Server

    Cultrera, Luca; Lee, Hyeri; Liu, Xianghong; Bazarov, Ivan


    In this letter we report on the generation of cold electron beams using a Cs3Sb photocathode grown by co-deposition of Sb and Cs. By cooling the photocathode to 90 K we demonstrate a significant reduction in the mean transverse energy validating the long standing speculation that the lattice temperature contribution limits the mean transverse energy or thermal emittance near the photoemission threshold, opening new frontiers in generating ultra-bright beams. At 90 K, we achieve a record low thermal emittance of 0.2 $\\mu$m (rms) per mm of laser spot diameter from an ultrafast (sub-picosecond) photocathode with quantum efficiency greater than $7\\times 10^{-5}$ using a visible laser wavelength of 690 nm.

  2. Antimonide-based pN Terahertz Mixer Diodes (United States)


    materials to develop a terahertz subharmonic mixer.2,3 The nonlinear properties of a subharmonic mixer are used to gen- erate a signal with frequency if...LO− by mixing power from a local oscillator at LO, with the signal of interest at . The goal of this effort is to develop a subharmonic mixer that...mobility narrow bandgap semicon- ductors using this material system. The terahertz subharmonic devices are of interest for ap- plications in imaging

  3. Antimonide-Based Compound Semiconductors for Electronic Devices: A Review (United States)


    currents, apparently due to exten- sive interface recombination [137]. Dodd et al. fabricated npn InAs bipolar transistors on InP in an attempt to achieve...Demonstration of npn InAs bipolar transistors with inverted base doping. IEEE Electron Dev Lett 1996;17(4):166–8. [139] Moran PD, Chow D, Hunter A, Kuech TF...based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors (HBTs

  4. Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy (United States)


    suggestions for reducing the burden, to Department of Defense, Executive Services , Directorate (0704-0188).   Respondents should be aware that...12. DISTRIBUTION/AVAILABILITY STATEMENT A DISTRIBUTION UNLIMITED: PB Public Release 13. SUPPLEMENTARY NOTES 14. ABSTRACT The research objective was...Engineering (ICSE 2014), Inya Lake Hotel , Yangon, Myanmar, 30 December, 2014. DISTRIBUTION A: Distribution approved for public release.

  5. Physics and technology of antimonide heterostructure devices at SCD (United States)

    Klipstein, Philip


    SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures, grown on GaSb. The XBn/XBp family of detectors enables diffusion limited behavior with dark currents comparable with MCT Rule-07 and with high quantum efficiencies. InAsSb/AlSbAs based XBn focal plane array detectors with a cut-off wavelength of ~ 4.1 μm and formats presently up to 1024×1280 / 15 μm, operate with background limited performance up to ~175 K at F/3. They have a sensitivity and image quality comparable with those of standard InSb detectors working at 77K. In an XBp configuration, the same concept has been applied to an InAs/GaSb type II superlattice (T2SL) detector with a cut-off wavelength of ~ 9.5 μm, which operates with background limited performance up to ~100 K at F/2. In order to design our detectors effectively, a suite of simulation algorithms was developed based on the k ṡ p and optical transfer matrix methods. In a given T2SL detector, the complete spectral response curve can be predicted essentially from a knowledge of the InAs and GaSb layer widths in a single period of the superlattice. Gallium free T2SL detectors in which the GaSb layer is replaced with InAs1-xSbx (x ~ 0.15-0.5) have also been simulated and the predicted spectral response compared for the two detector types.

  6. Zinc Antimonides and Copper Chalcogenides as Thermoelectric Materials

    DEFF Research Database (Denmark)

    Blichfeld, Anders Bank


    Thermoelectric materials offer solid state solution to convert waste heat into usable electric energy or to use electrical power for cooling with no movable parts and with no maintenance required. Thermoelectrics possess a large potential in an ever increasing concern with power management...... and utilizing environmental energy sources to minimize the anthropogenic impact on global climate changes. The efficiency of the current state of the art thermoelectric materials will have to be increased for making a change on global scale. For this to happen a detail structural understanding is needed...... thermoelectric materials because of their low price and high performance, but that still have unknown structural aspects that needs to be understood for control and utilization of their full thermoelectric potential. A range of syntheses techniques have been used to prepare zinc antimony compounds, e.g., spark...

  7. Antimonide-Based Compound Semiconductors for Low-Power Electronics (United States)


    amplifier (LNA) was demonstrated with 11 dB gain at a total chip dissipation of only 1.8 mW at 94 GHz [2]. This is a factor of 3 lower power than...enhancement in strained p-InGaSb quantum wells. Appl Phys Lett. 2007;91: 042104. [9] Boos JB, Bennett BR, Papanicolaou NA, Ancona MG, Champlain JG

  8. Thermoelectric properties of cobalt–antimonide thin films prepared by radio frequency co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz; Han, Seungwoo, E-mail:


    Co–Sb thin films with an Sb content in the range 65–76 at.%, were deposited on a thermally oxidized Si (100) substrate preheated at 200 °C using radio-frequency co-sputtering. Evaluation using scanning electron microscopy images and X-ray diffraction reveals that the films were polycrystalline, with a grain size in the range 100–250 nm. Energy-dispersive spectroscopy analysis indicates single-phase CoSb{sub 2} and CoSb{sub 3} films, as well as multiphase thin films with either CoSb{sub 2} or CoSb{sub 3} as the dominant phase. The electrical and thermoelectric properties were measured and found to be strongly dependent on the observed phases and the defect concentrations. The CoSb{sub 2} thin films were found to exhibit a significant n-type thermoelectric effect, which, coupled with the very low electrical resistivity, resulted in a larger power factor than that of the CoSb{sub 3} thin films. We find power factors of 0.73 mWm{sup −1} K{sup −2} and 0.67 mWm{sup −1} K{sup −2} for the CoSb{sub 2} and CoSb{sub 3} thin films, respectively. - Highlights: • Polycrystalline Co–Sb thin films were obtained by present deposition strategy. • CoSb{sub 2} and CoSb{sub 3} have semimetal and semiconductor characteristics respectively. • The Seebeck coefficient depends heavily on defect concentration and impurity phases. • Film properties in the second heating cycle were different from the first. • CoSb{sub 2} is found to possess significant n-type thermopower.

  9. Structural features of indium antimonide quantum dots on the indium arsenide substrate

    Directory of Open Access Journals (Sweden)

    Liliya A. Sokura


    Full Text Available The properties of InSb/InAs quantum dots (QDs have been investigated by transmission electron microscopy (TEM. Specific features of diffraction contrast were discovered in plan-view TEM images of big (9–10 nm in height and 38–50 nm in diameter InSb QDs. To understand the origin of such distortions, a model of an InSb QD on InAs substrate containing a partial Frank dislocation (FD was developed and used for calculations of the displacement field and the subsequent diffraction image simulation of an InSb QD for the first time. The shape of the QD was established to have an insignificant influence on the magnitude of radial displacements. The insertion of a misfit defect (a partial Frank dislocation into the QD reduces the strain at the edges of the QD almost by 30%. The comparison of experimental and simulated data allowed us to explain the observed features of the moiré pattern in the image of a big InSb QD by the presence of a misfit defect at the QD-substrate interface.

  10. Structure and Electrical Properties of RF Sputter Deposited Indium Antimonide Thin Films (United States)


    out on beeswax using 0.03 micron alumina grit suspended in methanol. The wafers were then rinsed in trichloroethylene, acetone, and methanol; dried...a 200 KV JEOL transmission electron microscope. Films arown on NaCl and Nal were prepared for examination by dissolving the substrates in deionized

  11. Quantum Transport in Indium Antimonide Nanowires: Investigating building blocks for Majorana devices

    NARCIS (Netherlands)

    Van Weperen, I.


    Recently ideas to engineer Majorana fermions in the solid state have been developed. These Majoranas, quasiparticles that are their own antiparticle, have received much attention, as they are expected to fulfill non-Abelian exchange statistics and could potentially function as fault-tolerant quantum

  12. Structural, morphological and Raman studies of pulse electrosynthesised indium antimonide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail:; Chandel, Tarun; Rajaram, P. [School of Studies in Physics, Jiwaji University, Gwalior (MP), India-474011 (India)


    InSb films deposited on fluorine doped tin oxide (FTO) substrates by a pulse elctrodeposition technique. The deposition was carried out at an applied potential −1.3V versus Ag/AgCl electrode. Structural, morphological and optical studies were performed on the electrodeposited InSb. X-ray diffraction (XRD) studies show that the deposited InSb films are polycrystalline in nature having the zinc blend structure. The crystallite size (D), dislocation density (δ) and strain (ε) were calculated using XRD results. The EDAX analysis shows that chemical composition of In{sup 3+} and Sb{sup 3+} ions is close to the required stoichiometry. The surface morphology of the deposited films was examined using scanning electron microscopy (SEM). SEM studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. However, the crystallite size determined by the Scherrer method shows a size close to 30 nm. Surface morphology studies of the InSb films were also performed using atomic force microscopy (AFM). The average surface roughness as measured by AFM is around 40 nm. Hot probe studies show that all the electrodeposited thin films have n type conductivity and the thickness of the films is calculated using electrochemical formula.

  13. Ballistic magnetotransport and spin-orbit interaction in indium antimonide and indium arsenide quantum wells (United States)

    Peters, John Archibald

    While charge transport in a two-dimensional electron system (2DES) is fairly well understood, many open experimental and theoretical questions related to the spin of electrons remain. The standard 2DES embedded in Alx Ga1-xAs/GaAs heterostructures is most likely not the optimal candidate for such investigations, since spin effects as well as spin-orbit interactions are small perturbations compared to other effects. This has brought InSb- and InAs-based material systems into focus due to the possibility of large spin-orbit interactions. By utilizing elastic scattering off a lithographic barrier, we investigate the consequence of spin on different electron trajectories observed in InSb and InAs quantum wells. We focus on the physical properties of spin-dependent reflection in a 2DES and we present experimental results demonstrating a method to create spin-polarized beams of ballistic electrons in the presence of a lateral potential barrier. Spatial separation of electron spins using cyclotron motion in a weak magnetic is also achieved via transverse magnetic focusing. We also explore electrostatic gating effects in InSb/InAlSb heterostructures and demonstrate the effective use of polymethylglutarimide (PMGI) as a gate dielectric for InSb. The dependence on temperature and on front gate voltage of mobility and density are also examined, revealing a strong dependence of mobility on density. As regards front gate action, there is saturation in the density once it reaches a limiting value. Further, we investigate antidot lattices patterned on InSb/InAlSb and InAs/AlGaSb heterostructures. At higher magnetic fields, ballistic commensurability features are displayed while at smaller magnetic fields localization and quantized oscillatory phenomena appear, with marked differences between InSb and InAs. Interesting localization behavior is exhibited in InSb, with the strength of the localization peak decreasing exponentially with temperature between 0.4 K and 50 K. InAs on the other hand show a strikingly modified antilocalization behavior, with small-period oscillations in magnetic field superposed. We also observe Altshuler-Aronov-Spivak oscillations in InSb and InAs antidot lattices and extract the phase and spin coherence lengths in InAs. Our experimental results are discussed in the light of localization and anti localization as probes of disorder and of spin dephasing mechanisms, modified by the artificial potential of the antidot lattice.

  14. Effect of Sb thickness on the performance of bialkali-antimonide photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Mamun, Md Abdullah A., E-mail:; Elmustafa, Abdelmageed A. [Department of Mechanical and Aerospace Engineering, Old Dominion University, Norfolk, Virginia 23529 and The Applied Research Center, Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States); Hernandez-Garcia, Carlos; Mammei, Russell; Poelker, Matthew [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)


    The alkali species Cs and K were codeposited using an effusion source, onto relatively thick layers of Sb (50 nm to ∼7 μm) grown on GaAs and Ta substrates inside a vacuum chamber that was baked and not-vented, and also baked and vented with clean dry nitrogen but not rebaked. The characteristics of the Sb films, including sticking probability, surface roughness, grain size, and crystal properties were very different for these conditions, yet comparable values of photocathode yield [or quantum efficiency (QE)] at 284 V were obtained following codeposition of the alkali materials. Photocathodes manufactured with comparatively thick Sb layers exhibited the highest QE and the best 1/e lifetime. The authors speculate that the alkali codeposition enabled optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali materials.

  15. Solidification (crystal growth) in the presence of gravitational forces. [indium antimonide melts at reduced gravity (United States)

    Gatos, H. C.; Witt, A. F.


    The surface tension behavior of doped and undoped InSb melts was investigated as well as their temperature and composition dependence. Surface tension in InSb melts was determined using the sessile-drop technique covering the temperature range from 530 C to 880 C. A linear regression of the data obtained shows that the temperature dependence of sigma is 392- (T-530) x (7000) plus or minus 10 dyne/cm. The d sigma/d Tau for intrinsics InSb is less than that previously reported. On the basis of the surface tension data obtained, it is concluded that surface tension induced convective flow velocities in InSb under reduced gravity conditions range from zero to at most 1 cm/sec. Accordingly, no interference with dopant segregation can be expected during growth in space because the momentum boundary layer (at the crystal melt interface) associated with any Marangoni-type convective flows would, at the given growth rate, be significantly larger than the predicted diffusion boundary layer thickness.

  16. Type-II indium arsenide/gallium antimonide superlattices for infrared detectors (United States)

    Mohseni, Hooman

    In this work, the unique properties of type-II InAs/GaSb heterojunctions were utilized for the realization of novel infrared photodetectors with higher operating temperature, detectivity and uniformity than the commonly available infrared detectors. This effort was concentrated on two major devices: uncooled infrared detectors in the long wavelength infrared (LWIR) range, and cooled devices in the very long wavelength infrared (VLWIR) range. Uncooled infrared (IR) detectors are required for low-cost, lightweight sensor systems that have many industrial and medical applications. Commercially available uncooled IR sensors use ferroelectric or microbolometer detectors. These sensors are inherently slow and cannot detect rapid signal changes needed for high-speed infrared systems. Some of the applications which require a fast detector (tau LIDARs. Although photon detectors have frequency responses in the megahertz range, their high temperature detectivity is severely degraded due to high Auger recombination rates. Bandgap engineering was used in order to suppress Auger recombination at room temperature in type-II superlattices. Our experimental results demonstrated nearly one order of magnitude lower Auger recombination rate at room temperature in these type-II superlattices compared to typical intrinsic detectors, such as HgCdTe, with similar bandgap. Uncooled detectors based on the engineered superlattices showed a detectivity of 1.3 x 108g cmHz 1/2/W at 11 Et m, which is comparable to microbolometers. However, the measured response time of the detectors was more than five orders of magnitude faster than microbolometers. In parallel, devices for operation in the VLWIR were developed. High-performance infrared detectors with cutoff wavelength above 14 mum are highly needed for many space-based applications. Commonly used detectors are extrinsic silicon and HgCdTe. However, the former has to be cooled below 10K, and the latter do not have good uniformity in the VLWIR range. We demonstrated high-performance type-II superlattice photodiodes with cutoff wavelength up to 25 mum and excellent bandgap uniformity over a three-inch wafer area. Devices with a 50% cutoff wavelength of 16 mum showed a nearly 50% internal quantum efficiency and background limited infrared photodetector (BLIP) performance at T = 60 K for the first time.

  17. Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium Arsenide, Indium Phosphide, Indium Arsenide, and Gallium Antimonide. (United States)


    interest and support in many aspects of this work. The author would also like to thank Professors N. Holonyak Jr., G. * Stillman, and B. Wheeler for...York, 1958. [321 R. P. Feynman , Statistical Mechanics, A Set of Lectures, W. A. * -. Benjamin, Reading Ma., 1972. [33] G. 3. lafrate, "Quantum transport

  18. Characterization of Atomic Structure, Relaxation and Phase Transformation Mechanisms in Bulk and Thin Film Amorphous Chalcogenides and Gallium Antimonide (United States)

    Edwards, Trenton Gerard

    This dissertation details the characterization of the atomic structure, relaxation processes and phase transformation mechanisms in a variety of chalcogenide (selenides and tellurides) and other non-oxide (Ga-Sb alloys) glasses which are highly relevant to optoelectronic and phase change memory applications. One of the principal goals of these studies is to develop a fundamental, atomistic understanding of the structure-property relationships in these materials. Variable temperature Raman spectroscopy is used to the study the structure and its temperature dependent relaxation in GexSe100-x glasses and supercooled liquids with x ≤ 33.33 %. It is shown that the compositional dependence of the relative fractions of the edge- and corner-shared GeSe4 tetrahedra is fully consistent with a structural model based on random connectivity between the tetrahedral and chain elements. Temperature-dependent structural changes involve a progressive conversion of edge-shared to corner shared GeSe4 tetrahedra with decreasing equilibration temperature. The time scale of this structural conversion agrees with both enthalpy and shear relaxation near the glass transition. The temperature dependent change in the edge- vs. corner- sharing tetrahedral speciation is shown to be related to the production of configurational entropy, indicating a connection between structural relaxation, configurational entropy, and viscous flow. A combination of Raman and 77Se nuclear magnetic resonance (NMR) spectroscopy is applied to study the structure of a series of Se-deficient GexSe100-x glasses, with 42 ≥ x ≥ 33.33. Considerable violation of chemical order in the nearest-neighbor coordination environments of the constituent atoms is observed in the stoichiometric GeSe2 glass. On the other hand, the presence of a random distribution of Ge-Ge bonds can be inferred in the Se-deficient glasses. Furthermore, the results of this study conclusively indicate that the structure of these glasses is intermediate between a randomly connected and a fully clustered network of GeSe4 tetrahedra and Se chains. Additionally, a new two-dimensional NMR spectroscopic technique is developed and applied to Ge-Se glasses that allowed the separation of isotropic and anisotropic chemical shifts. Through the analysis of the anisotropic sideband pattern in the second dimension it is possible to detect up to four distinct types of Se environments in the glass structure on the basis of their characteristic chemical shift anisotropies. 125Te NMR chemical shift systematics is established for coordination environments of Te atoms in a wide range of crystalline and glassy tellurides in the Ga-As-Sb-Te system. 125Te NMR spectroscopy is then used to investigate the short-range structure of amorphous and crystalline Ge1Sb2 Te4 and Ge2Sb2Te5 phase change alloys. Both alloys are found to consist of only heteropolar Ge/Sb-Te bonds in the amorphous and crystalline state and strong vacancy clustering in the nanocrystalline state that may facilitate a rapid displacive transformation between the amorphous and crystalline states without the need of significant atomic rearrangement or diffusion. Based on these 125Te NMR results a Te-centric model of the phase change mechanism in GST alloys is proposed. Structure and phase changes in amorphous Ga-Sb alloys are studied using synchrotron x-ray diffraction and 71Ga and 121Sb NMR spectroscopy. Pressure induced phase transformations in amorphous GaSb is shown to be consistent with the existence of an underlying polyamorphic phase transition between a low and a high-density amorphous phase. NMR results for amorphous Ga46Sb54 indicate that both Ga and Sb atoms are fourfold coordinated with 40% of these atoms participating in homopolar bonding in the as-deposited film. Subsequent crystallization into the zinc blend structure therefore requires extensive bond switching and elimination of homopolar bonds. For amorphous Ga14Sb86 both Ga and Sb atoms are found to be threefold coordinated allowing for a fast phase change kinetics although crystallization of this alloy leads to phase separation of GaSb domains in an Sb matrix, whereby all Ga becomes 4 coordinated. These structural characteristics of the amorphous and crystalline Ga-Sb alloys may have important implications in understanding the kinetics of the associated phase change process that defines the suitability of these materials for non-volatile memory applications.

  19. Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser (United States)

    Goddard, Lynford


    Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

  20. Tracking Sodium-Antimonide Phase Transformations in Sodium-Ion Anodes: Insights from Operando Pair Distribution Function Analysis and Solid-State NMR Spectroscopy. (United States)

    Allan, Phoebe K; Griffin, John M; Darwiche, Ali; Borkiewicz, Olaf J; Wiaderek, Kamila M; Chapman, Karena W; Morris, Andrew J; Chupas, Peter J; Monconduit, Laure; Grey, Clare P


    Operando pair distribution function (PDF) analysis and ex situ (23)Na magic-angle spinning solid-state nuclear magnetic resonance (MAS ssNMR) spectroscopy are used to gain insight into the alloying mechanism of high-capacity antimony anodes for sodium-ion batteries. Subtraction of the PDF of crystalline NaxSb phases from the total PDF, an approach constrained by chemical phase information gained from (23)Na ssNMR in reference to relevant model compounds, identifies two previously uncharacterized intermediate species formed electrochemically; a-Na(3-x)Sb (x ≈ 0.4-0.5), a structure locally similar to crystalline Na3Sb (c-Na3Sb) but with significant numbers of sodium vacancies and a limited correlation length, and a-Na(1.7)Sb, a highly amorphous structure featuring some Sb-Sb bonding. The first sodiation breaks down the crystalline antimony to form first a-Na(3-x)Sb and, finally, crystalline Na3Sb. Desodiation results in the formation of an electrode formed of a composite of crystalline and amorphous antimony networks. We link the different reactivity of these networks to a series of sequential sodiation reactions manifesting as a cascade of processes observed in the electrochemical profile of subsequent cycles. The amorphous network reacts at higher voltages reforming a-Na(1.7)Sb, then a-Na(3-x)Sb, whereas lower potentials are required for the sodiation of crystalline antimony, which reacts to form a-Na(3-x)Sb without the formation of a-Na(1.7)Sb. a-Na(3-x)Sb is converted to crystalline Na3Sb at the end of the second discharge. We find no evidence of formation of NaSb. Variable temperature (23)Na NMR experiments reveal significant sodium mobility within c-Na3Sb; this is a possible contributing factor to the excellent rate performance of Sb anodes.

  1. Tracking Sodium-Antimonide Phase Transformations in Sodium-Ion Anodes: Insights from Operando Pair Distribution Function Analysis and Solid-State NMR Spectroscopy (United States)


    Operando pair distribution function (PDF) analysis and ex situ 23Na magic-angle spinning solid-state nuclear magnetic resonance (MAS ssNMR) spectroscopy are used to gain insight into the alloying mechanism of high-capacity antimony anodes for sodium-ion batteries. Subtraction of the PDF of crystalline NaxSb phases from the total PDF, an approach constrained by chemical phase information gained from 23Na ssNMR in reference to relevant model compounds, identifies two previously uncharacterized intermediate species formed electrochemically; a-Na3–xSb (x ≈ 0.4–0.5), a structure locally similar to crystalline Na3Sb (c-Na3Sb) but with significant numbers of sodium vacancies and a limited correlation length, and a-Na1.7Sb, a highly amorphous structure featuring some Sb–Sb bonding. The first sodiation breaks down the crystalline antimony to form first a-Na3–xSb and, finally, crystalline Na3Sb. Desodiation results in the formation of an electrode formed of a composite of crystalline and amorphous antimony networks. We link the different reactivity of these networks to a series of sequential sodiation reactions manifesting as a cascade of processes observed in the electrochemical profile of subsequent cycles. The amorphous network reacts at higher voltages reforming a-Na1.7Sb, then a-Na3–xSb, whereas lower potentials are required for the sodiation of crystalline antimony, which reacts to form a-Na3–xSb without the formation of a-Na1.7Sb. a-Na3–xSb is converted to crystalline Na3Sb at the end of the second discharge. We find no evidence of formation of NaSb. Variable temperature 23Na NMR experiments reveal significant sodium mobility within c-Na3Sb; this is a possible contributing factor to the excellent rate performance of Sb anodes. PMID:26824406

  2. Theoretical design and material growth of Type-II Antimonide-based superlattices for multi-spectral infrared detection and imaging (United States)

    Hoang, Anh Minh

    Infrared detectors find applications in many aspects of life, from night vision, target tracking for homeland security and defense, non-destructive failure detection in industry, chemical sensing in medicine, and free-space communication. Currently, the dominant technologies of photodetectors based upon HgCdTe and InSb are experiencing many limitations. Under this circumstance, the Type-II InAs/GaSb/AlSb superlattices which have been intensively studied recently appear to be an excellent candidate to give breakthroughs in the infrared technology. The Type-II SLs with theirs advantages such as great flexibility in bandgap engineering, high carrier effective mass, Auger recombination suppression and high uniformity have shown excellent device performance from MWIR to VLWIR. In the era of the third generation for infrared cameras, Type-II SLs are entering the new phase of development with high performance and multi-spectral detection. The goal of this work is to investigate quantum properties of the superlattice system, design appropriate device architectures and experimentally fabricate infrared detectors which can push further the limit of this material system and outperform existing competing technologies. The binary-binary InAs/GaSb superlattice has gone through much transformation over the years. Incorporating compounds lattice matched to the 6.1A family has invited more possibilities to band engineer the Type-II SLs. For the first time, by employing all three members of this material system, we have designed a new superlattice structure and demonstrated shortwavelength infrared (SWIR) photodiodes based on Type-II InAs/GaSb/AlSb with high electrical and optical performance. The photodiodes exhibited a quantum efficiency of 60% with very low dark current, can be operated at room temperature. In addition to the range of MWIR to VLWIR, a new channel of detection has been added to the GaSb based type-II SL material system. The new realization of SWIR photodiodes has led to the possibility of incorporating this channel to the multi-spectral detection. By combining with the MWIR channel, dual-band SWIR-MWIR photodiodes and focal plane arrays have been demonstrated, giving the capability of delivering both active and passive imaging in one single camera. Dual-band SWIR-MWIR photodiodes with quantum efficiency more than 50% for each channel has been achieved. Just like visible imaging, besides the available dual-band detection, the prospect of incorporating the third infrared waveband detection is very promising for a wide range of applications. However, the challenges for making such devices are so many that little success has been achieved. In the work, we also propose a new approach in device design to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetector based on InAs/GaSb/AlSb type-II superlattice. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. For the first time, we demonstrate experimentally Type-II superlattice based three-color photodiodes without using additional terminal contacts. As the applied bias voltage varies, the photodiodes exhibit sequentially the behavior of three different colors, corresponding to the bandgap of three absorbers. Well defined cut-offs and high quantum efficiency in each channel are achieved. While retaining the simplicity in device fabrication, this demonstration opens the new prospect for three-color infrared imaging. Finally, for further improvement, we are looking toward new type-II material called InAs/InAsSb superlattices. Theoretical design and growth techniques have been developed to investigate the properties of this material. We successfully demonstrated the design and growth of MWIR to VLWIR photodiodes based on Type-II InAs/InAsSb with high performance. Given the fact that these two Type-II material systems share the same GaSb substrate, a new incorporation could further fully exploit their advantages in the near future. Theoretical design, growth and optimization of device performance in each work are discussed.

  3. A Study of the Irradiance- and Temperature-Dependence of Mid-Wave-Infrared (MWIR) Absorption in Indium Antimonide (InSb) (United States)


    integrated circuitry beneath the InSb thin film back into the optical system. To evaluate this, irradiance-dependent laser-absorption experiments were...integrated circuitry (ROIC) beneath the InSb thin film back into the optical system. A focused point source will not extend beyond one or two pixels in a...32 Next was the first zinc selenide (ZnSe) lens, with focal length, F = 20 mm and diameter, dia = 50 mm(12). Then, a second ZnSe lens with F = 100

  4. Development of High-k Dielectric for Antimonides and a sub 350 degree Celsius III-V pMOSFET Outperforming Germanium (United States)


    with ideality factor of 1.4 and ION/IOFF > 5!104 is developed. pMOSFETs with various channel configurations to optimize the hole transport are...temperature saturates at 340ºC and good diode characteristics with ION/IOFF of > 5!104 and an ideality factor of 1.4 could be obtained with... Papanicolaou , M. G. Ancona, J. G. Champlain, R. Bass and B. V. Shanabrook, Electronics Letters, 43, pp.834 (2007). [6] M. Passlack, P. Zurcher, K

  5. Control of Anion in Corporation in the Molecular Beam Epitaxy of Ternary Antimonide Superlattices for Very Long Wavelength Infrared Detection (Postprint) (United States)


    Case Number: 88ABW-2014-2260; Clearance Date: 13 May 2014. Journal article published in Journal of Crystal Growth 425 (2015) 25–28. © 2015 Elsevier...ScienceDirect journal homepage: Journal of Crystal Growth 0022-0248/& 2015...Elsevier B.V. All rights reserved. n Corresponding author. E-mail address: (H.J. Haugan). Journal of Crystal Growth 425

  6. The 3-5 semiconductor solid solution single crystal growth. [low gravity float zone growth experiments using gallium indium antimonides and cadmium tellurides (United States)

    Gertner, E. R.


    Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

  7. Electronic structure of Cs2KSb and K2CsSb

    NARCIS (Netherlands)

    Ettema, A.R.H.F.; Groot, R.A. de


    Alkali antimonide compounds perform well as photoemissive materials in photodetectors. A number of band-structure calculations have been reported in recent years on binary compounds; however the ternary alkali antimonides (those that involve two different alkali metal atoms) were most successfully a

  8. Development of a Prototype 2 mm Fiber-Coupled Seed Laser for Integration in Lidar Transmitter Project (United States)

    National Aeronautics and Space Administration — Optimize the performance of Gallium Antimonide (GaSb)-based 2.05 mm lasers (previously developed under JPL’s Research and Technology Development (R&TD)...

  9. Shubnikov-de Haas Oscillations in a Degenerate Semiconductor. (United States)

    Mansfield, R.


    Describes an experiment, in solid-state physics, for measuring the Shubnikov-de Haas oscillations in indium antimonide. It also provides an introduction to low-temperature techniques and to cryomagnetic systems. (Author/GA)

  10. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R


    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  11. Upconversion imager measures single mid-IR photons

    DEFF Research Database (Denmark)

    Dam, Jeppe Seidelin; Tidemand-Lichtenberg, Peter; Pedersen, Christian


    The most sensitive IR detectors today are based on exotic semicoductor technology such as indium antimonide or mercury cadmium telluride. High quality detectors of these sorts are expensive and suffer from high dark currents. Dark current can be somewhat alleviated by extreme cooling. Comparing t...

  12. Novel Helmholtz-based photoacoustic sensor for trace gas detection at ppm level using GaInAsSb/GaAlAsSb DFB lasers. (United States)

    Mattiello, Mario; Niklès, Marc; Schilt, Stéphane; Thévenaz, Luc; Salhi, Abdelmajid; Barat, David; Vicet, Aurore; Rouillard, Yves; Werner, Ralph; Koeth, Johannes


    A new and compact photoacoustic sensor for trace gas detection in the 2-2.5 microm atmospheric window is reported. Both the development of antimonide-based DFB lasers with singlemode emission in this spectral range and a novel design of photoacoustic cell adapted to the characteristics of these lasers are discussed. The laser fabrication was made in two steps. The structure was firstly grown by molecular beam epitaxy then a metallic DFB grating was processed. The photoacoustic cell is based on a Helmholtz resonator that was designed in order to fully benefit from the highly divergent emission of the antimonide laser. An optimized modulation scheme based on wavelength modulation of the laser source combined with second harmonic detection has been implemented for efficient suppression of wall noise. Using a 2211 nm laser, sub-ppm detection limit has been demonstrated for ammonia.

  13. Electrochemical properties of CoFe3Sb12 as potential anode material for lithium-ion batteries

    Institute of Scientific and Technical Information of China (English)

    赵新兵; 钟耀东; 曹高劭


    A skutterudite-related antimonide, CoFe3Sb12,was prepared with vacuum melting.XRD analysis showed the material contained Sb, FeSb2, CoSb2 and CoSb3 phases.The electrochemical properties of the ball-milled CoFe3Sb12-10wt% graphite composite were studied using pure lithium as the reference electrode. A maximal lithium inserting capacity of about 860 mAh/g was obtained in the first cycle.The reversible capacity of the material was about 560mAh/g in the first cycle and decreased to ca.320 mAh/g and 250 mAh/g after 10 and 20 cycles respectively.Ex-situ XRD analyses showed that the antimonides in the pristine material were decomposed after the first discharge and that antimony was the active element for lithium to insert into the host material.

  14. Effect of Transition Metal on the Electrochemical Performances of Some Intermetallic Anodes for Lithium Ion Batteries

    Institute of Scientific and Technical Information of China (English)

    Jian XIE; Xinbing ZHAO; Gaoshao CAO; Mingjian ZHAO; Yaodong ZHONG


    Some transition metal antimonides were prepared by levitation melting and subsequent ball-milling. The electrochemical behaviors of these materials as new candidate negative electrode materials in lithium ion secondary batteries were investigated. It was found that they exhibited significantly larger volumetric capacity than carbon-based materials. The formation and composition of solid electrolyte interface (SEI) film were characterized by electrochemical impedance spectroscopy (EIS) and Fourier transform infra-red (FTIR) spectroscopy.

  15. Report of high quantum efficiency photocathode at Milano

    Energy Technology Data Exchange (ETDEWEB)

    Michelato, P. (INFN and University of Milano, Lab. LASA, Via F.lli Cervi 201, 2009, Segrate (Georgia))


    R D activity on high quantum efficiency alkali antimonide photocathode is in progress at Milano, in the context of the ARES program. Inside a preliminary preparation chamber, Cs[sub 3]Sb layers with qunatum efficiency up to 9% (at [lambda]=543.5 nm) and lifetime of some days has been recently produced on copper, stainless steel and niobium, using a reproducible deposition procedure adapted to the material of the different substrata.

  16. Electrosprayed Heavy Ion and Nanodrop Beams for Surface Engineering and Electrical Propulsion (United States)


    arsenide, gallium antimonide, gallium nitride and silicon carbide; studied the role of the liquid’s composition on the sputtering of silicon; study...hence can easily be contaminated , especially as they tend to hydrolyze when stored in the presence of water for a significant time. The other anions...emissions are very infrequent. 4.4 Water Contamination of Ionic Liquids Additional molecular dynamics simulations have been run with water introduced into

  17. Preparation of Al–Sb semiconductor by swift heavy ion irradiation

    Indian Academy of Sciences (India)

    R K Mangal; M Singh; Y K Vijay; D K Avasthi


    Al–Sb bilayer thin films having various thicknesses were deposited by thermal evaporation on ITO-coated conducting glass substrates at a pressure of 10-5 torr. These films were irradiated by Ag12+ heavy ions of energy, 160 MeV, with a fluence of 2.2 × 1013 ions/cm2, to get aluminum antimonide semiconductor. Rutherford back scattering and optical band gap data confirmed mixing of bilayer to form the semi-conducting system.

  18. Chemical Analyzer for In Situ and Real Time Surface Monitoring for Composition Control During Synthesis of Compound Semiconductor Films (United States)


    results. Done. Comments: Several ternary growths were performed, AlGaSb, AlGaAs , InAsSb, and InGaSb. The data recorded real-time during the growths...exhibited no structural deviations between the two films, Figure 1. The PL spectra indicates that the luminescent properties were also unaffected by...does not interfere with the MBE process and does not affect structural/ optical quality of the antimonide-based photonic heterostructures. -7000

  19. Advanced Space-Based Detectors (United States)


    unique optical properties produce an unexpectedly high opacity for an atomic monolayer. Recent advances in the fabrication techniques of graphene...3D – three-dimensional AEOSS – Advanced Electro- Optical Space Sensors AlGaAs – Aluminum/Galium/Arsenide AlGaSb – Aluminum/Galium/Antimonide CNL...SUPPLEMENTARY NOTES 14. ABSTRACT At the Air Force Research Laboratory, Space Vehicles Directorate, Advanced Electro- Optical Space Sensors (AEOSS) Group, we

  20. Helium-neon lasers for remote measurements of natural gas leaks (United States)


    A Differential Absorption Lidar (DIAL) system that at a distance of 15 meters can remotely sense natura gas (methane) leaks was developed. The system uses two helium-neon lasers (each emitting a different wavelength), a receiver, and an indium antimonide (InSb) photodetector cooled to 77 K. It is demonstrated the system can defect methane leaks both from an underground gas distribution system, and from sanitary landfills.

  1. An Innovative Gas Sensor with On-Chip Reference Using Monolithic Twin Laser

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yong-Gang; TIAN Zhao-Bing; ZHANG Xiao-Jun; GU Yi; LI Ai-Zhen; ZHU Xiang-Rong; ZHENG Yan-Lan; LIU Sheng


    An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 μm antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below 1 ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.

  2. Scattering efficiency and near field enhancement of active semiconductor plasmonic antennas at terahertz frequencies. (United States)

    Giannini, Vincenzo; Berrier, Audrey; Maier, Stefan A; Sánchez-Gil, José Antonio; Rivas, Jaime Gómez


    Terahertz plasmonic resonances in semiconductor (indium antimonide, InSb) dimer antennas are investigated theoretically. The antennas are formed by two rods separated by a small gap. We demonstrate that, with an appropriate choice of the shape and dimension of the semiconductor antennas, it is possible to obtain large electromagnetic field enhancement inside the gap. Unlike metallic antennas, the enhancement around the semiconductor plasmonics antenna can be easily adjusted by varying the concentration of free carriers, which can be achieved by optical or thermal excitation of carriers or electrical carrier injection. Such active plasmonic antennas are interesting structures for THz applications such as modulators and sensors.

  3. Skylab experiments on semiconductors and alkali halides. [single crystal growth (United States)

    Lundquist, C. A.


    The space processing experiments performed during the Skylab missions included one on single crystal growth of germanium selenide and telluride, one on pure and doped germanium crystals, two on pure and doped indium antimonide, one on gallium-indium-antimony systems, and one on a sodium chloride-sodium fluoride eutectic. In each experiment, three ampoules of sample were processed in the multipurpose electric furnace within the Skylab Materials Processing Facility. All were successful in varying degrees and gave important information about crystal growth removed from the effects of earth surface gravity.

  4. Coating Thermoelectric Devices To Suppress Sublimation (United States)

    Sakamoto, Jeffrey; Caillat, Thierry; Fleurial, Jean-Pierre; Snyder, G. Jeffrey


    A technique for suppressing sublimation of key elements from skutterudite compounds in advanced thermoelectric devices has been demonstrated. The essence of the technique is to cover what would otherwise be the exposed skutterudite surface of such a device with a thin, continuous film of a chemically and physically compatible metal. Although similar to other sublimation-suppression techniques, this technique has been specifically tailored for application to skutterudite antimonides. The primary cause of deterioration of most thermoelectric materials is thermal decomposition or sublimation - one or more elements sublime from the hot side of a thermoelectric couple, changing the stoichiometry of the device. Examples of elements that sublime from their respective thermoelectric materials are Ge from SiGe, Te from Pb/Te, and now Sb from skutterudite antimonides. The skutterudite antimonides of primary interest are CoSb3 [electron-donor (n) type] and CeFe(3-x)Co(x)Sb12 [electron-acceptor (p) type]. When these compounds are subjected to typical operating conditions [temperature of 700 C and pressure sublimes from their surfaces, with the result that Sb depletion layers form and advance toward their interiors. As the depletion layer advances in a given device, the change in stoichiometry diminishes the thermal-to-electric conversion efficiency of the device. The problem, then, is to prevent sublimation, or at least reduce it to an acceptably low level. In preparation for an experiment on suppression of sublimation, a specimen of CoSb3 was tightly wrapped in a foil of niobium, which was selected for its chemical stability. In the experiment, the wrapped specimen was heated to a temperature of 700 C in a vacuum of residual pressure sublimation of antimony at 700 C. This was a considerable improvement, considering that uncoated CoSb3 had been found to decompose to form the lowest antimonide at the surface at only 600 C. Evidently, because the mean free path of Sb at the

  5. Basic Research Plan (United States)


    Dpuy ndr ecetryo Defense ~ ~ (Si c an TehooyP sadPorm) a h otoln fiedsg natedI in Do Ditibto Stte en C, heeyas3uhrzsisrees iitiso Defense~ ~ ~ ~ ofalNT n...arsenide GaN gallium nitride GaSb gallium antimonide Ge germanium GEO geosynchronous earth orbit GHz gigahertz GICR Government/Industry Cooperative... silicon Si3N4 silicon nitride SiC silicon carbide SNR signal-to-noise ratio SPG Scientific Planning Group SRO Strategic Research Objectives STM scanning

  6. High Performance Photocathodes based on Molecular Beam Epitaxy Deposition for Next Generation Photo Detectors and Light Sources

    CERN Document Server

    Xie, Junqi; Wagner, Robert


    The development of high-performance photocathodes is a key challenge for future accelerator and particle physics applications. In this paper photocathode growth through molecular beam epitaxy is introduced as a promising technique to obtain robust, highly efficient alkali-antimonide based photocathodes. Recent research shows that the quantum efficiency of photocathodes can be significantly enhanced through control of the photocathode crystallinity. Molecular beam epitaxy allows for cost-effective growth of large-area photocathodes with excellent control of the stoichiometry and crystallinity, making photocathodes with peak quantum efficiencies exceeding 35% routine.

  7. Electron beam generation from semiconductor photocathodes (United States)

    Arneodo, F.; Cavanna, F.; De Mitri, I.; Mazza, D.; Nassisi, V.


    Several measurements on a variety of semiconductor photocathodes were performed in order to determine their photoelectric quantum efficiency. Two different excimer lasers (XeCl and KrCl) and a pulsed Xe lamp were used as light sources for electron photoextraction from doped and undoped samples of cadmiun telluride, indium antimonide, and indium phosphide. Large current densities were obtained up to the limit of the Child-Langmuir law. This suggests the use of these materials for the production of intense electron sources, which could also be used for purity measurements of noble liquids.

  8. Charge-Injection Device (CID) Infrared Staring Imaging Sensor (United States)

    Baker, W. D.; Wilson, S. H.; Missman, R. A.; Nuttall, D. E.; Ting, R. N.


    A laboratory version of an infrared staring imaging sensor, based on a 32 x 32 indium antimonide CID detector array, has been developed. That sensor serves both as a test bed for array evaluation and as a tool for investigating concepts such as non-uniformity compensation. The system is microprocessor based to provide for flexible array operation as well as for the collection and logging of array operating conditions and data. Design features of the sensor, including the focal plane and the supporting electronics, are described. Operation of the sensor is discussed and some of the imaging data collected with this system is presented.

  9. Studying the Physics and Operation of Multi-Terminal Near-Micron and Sub-Micron Length, Hot Electron Semiconductor Devices. (United States)


    Sub-Micron Length, Hot Elecronn qPmjj-ndv-tnr T)Ptir-.aa...- 12. PERSONAL AUTHOR(S) - H. L. Grubin., J. P. Kreskovsky, M.,.Meyyappan, B. J. Morrison I...crystal films. Prof. Ferry: The last person I remember working on bismuch antimonid was at Bell; it was some years ago. Dr. Cooper: There was somebody at...well as to a random force, which leads to velocity fILuCtuations. as well as to the concept of temperature (thermal fluctuacions ). The response to dhe

  10. Mid-infrared tunable metamaterials (United States)

    Brener, Igal; Miao, Xiaoyu; Shaner, Eric A; Passmore, Brandon Scott; Jun, Young Chul


    A mid-infrared tunable metamaterial comprises an array of resonators on a semiconductor substrate having a large dependence of dielectric function on carrier concentration and a semiconductor plasma resonance that lies below the operating range, such as indium antimonide. Voltage biasing of the substrate generates a resonance shift in the metamaterial response that is tunable over a broad operating range. The mid-infrared tunable metamaterials have the potential to become the building blocks of chip based active optical devices in mid-infrared ranges, which can be used for many applications, such as thermal imaging, remote sensing, and environmental monitoring.

  11. Influence of crystal–melt interface shape on self-seeding and single crystalline quality

    Indian Academy of Sciences (India)

    D B Gadkari; P Shashidharan; K B Lal; B M Arora


    The growth of Sb-based crystals (InSb, GaSb etc) was undertaken using resistive heater furnace by vertical directional solidification (VDS) technique. Crystal–melt interface shape during the growth was shown to convert from concave to convex along the crystal axis of the ingots. Many antimonide (Sb) crystals of 8 mm to 18 mm diameter were grown by optimized growth parameters. The forced convection and absence of conducting support to ampoule showed improvement in crystal quality of as grown ingots. Crystals showed preferred orientation and self-seeding. Results on interface shape and crystallinity of ingots were found to be in good agreement with the experiments.

  12. Laboratory and Field Application of River Depth Estimation Techniques Using Remotely Sensed Data: Annual Report Year 1 (United States)


    The camera we used is a FLIR SC 8300 HD. The camera has an indium antimonide (InSb) sensor that detects mid- range IR light in the 3-5 micron (μm) band...this work to other research projects, including work on the Kootenai, Platte, and Russian Rivers. In addition, we are working closely with NASA and...MD_SWMS, American Society for Photogrammetry and Remote Sensing, Proceedings of the 2008 Annual Conference –PNAMP Special Session: Remote Sensing

  13. Simulation and Finite Element Analysis of Electrical Characteristics of Gate-all-Around Junctionless Nanowire Transistors

    Directory of Open Access Journals (Sweden)

    Neel Chatterjee


    Full Text Available Gate all around nanowire transistors is one of the widely researched semiconductor devices, which has shown possibility of further miniaturization of semiconductor devices. This structure promises better current controllability and also lowers power consumption. In this paper, Silicon and Indium Antimonide based nanowire transistors have been designed and simulated using Multiphysics simulation software to investigate on its electrical properties. Simulations have been carried out to study band bending, drain current and current density inside the device for changing gate voltages. Further analytical model of the device is developed to explain the physical mechanism behind the operation of the device to support the simulation result.

  14. Study of the influence of semiconductor material parameters on acoustic wave propagation modes in GaSb/AlSb bi-layered structures by Legendre polynomial method

    Energy Technology Data Exchange (ETDEWEB)

    Othmani, Cherif, E-mail:; Takali, Farid; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi


    The propagation of Rayleigh–Lamb waves in bi-layered structures is studied. For this purpose, an extension of the Legendre polynomial (LP) method is proposed to formulate the acoustic wave equation in the bi-layered structures induced by thin film Gallium Antimonide (GaSb) and with Aluminum Antimonide (AlSb) substrate in moderate thickness. Acoustic modes propagating along a bi-layer plate are shown to be quite different than classical Lamb modes, contrary to most of the multilayered structures. The validation of the LP method is illustrated by a comparison between the associated numerical results and those obtained using the ordinary differential equation (ODE) method. The convergency of the LP method is discussed through a numerical example. Moreover, the influences of thin film GaSb parameters on the characteristics Rayleigh–Lamb waves propagation has been studied in detail. Finally, the advantages of the Legendre polynomial (LP) method to analyze the multilayered structures are described. All the developments performed in this work were implemented in Matlab software.

  15. Einstein's photoemission emission from heavily-doped quantized structures

    CERN Document Server

    Ghatak, Kamakhya Prasad


    This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

  16. Debye screening length effects of nanostructured materials

    CERN Document Server

    Ghatak, Kamakhya Prasad


    This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped ...

  17. Heavily-doped 2D-quantized structures and the Einstein relation

    CERN Document Server

    Ghatak, Kamakhya P


    This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing ma...

  18. Final Report, Photocathodes for High Repetition Rate Light Sources

    Energy Technology Data Exchange (ETDEWEB)

    Ben-Zvi, Ilan [Stony Brook University


    This proposal brought together teams at Brookhaven National Laboratory (BNL), Lawrence Berkeley National Laboratory (LBNL) and Stony Brook University (SBU) to study photocathodes for high repetition rate light sources such as Free Electron Lasers (FEL) and Energy Recovery Linacs (ERL). The work done under this grant comprises a comprehensive program on critical aspects of the production of the electron beams needed for future user facilities. Our program pioneered in situ and in operando diagnostics for alkali antimonide growth. The focus is on development of photocathodes for high repetition rate Free Electron Lasers (FELs) and Energy Recovery Linacs (ERLs), including testing SRF photoguns, both normal-conducting and superconducting. Teams from BNL, LBNL and Stony Brook University (SBU) led this research, and coordinated their work over a range of topics. The work leveraged a robust infrastructure of existing facilities and the support was used for carrying out the research at these facilities. The program concentrated in three areas: a) Physics and chemistry of alkali-antimonide cathodes b) Development and testing of a diamond amplifier for photocathodes c) Tests of both cathodes in superconducting RF photoguns and copper RF photoguns

  19. Study of the influence of semiconductor material parameters on acoustic wave propagation modes in GaSb/AlSb bi-layered structures by Legendre polynomial method (United States)

    Othmani, Cherif; Takali, Farid; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi


    The propagation of Rayleigh-Lamb waves in bi-layered structures is studied. For this purpose, an extension of the Legendre polynomial (LP) method is proposed to formulate the acoustic wave equation in the bi-layered structures induced by thin film Gallium Antimonide (GaSb) and with Aluminum Antimonide (AlSb) substrate in moderate thickness. Acoustic modes propagating along a bi-layer plate are shown to be quite different than classical Lamb modes, contrary to most of the multilayered structures. The validation of the LP method is illustrated by a comparison between the associated numerical results and those obtained using the ordinary differential equation (ODE) method. The convergency of the LP method is discussed through a numerical example. Moreover, the influences of thin film GaSb parameters on the characteristics Rayleigh-Lamb waves propagation has been studied in detail. Finally, the advantages of the Legendre polynomial (LP) method to analyze the multilayered structures are described. All the developments performed in this work were implemented in Matlab software.

  20. Ultra-fast dry microwave preparation of SnSb used as negative electrode material for Li-ion batteries (United States)

    Antitomaso, P.; Fraisse, B.; Sougrati, M. T.; Morato-Lallemand, F.; Biscaglia, S.; Aymé-Perrot, D.; Girard, P.; Monconduit, L.


    Tin antimonide alloy was obtained for the first time using a very simple dry microwave route. Up to 1 g of well crystallized SnSb can be easily prepared in 90 s under air in an open crucible. A full characterization by X-ray diffraction and 119Sn Mössbauer spectroscopy demonstrated the benefit of carbon as susceptor, which avoid any oxide contamination. The microwave-prepared SnSb was tested as negative electrode material in Li batteries. Interesting results in terms of capacity and rate capability were obtained with up to 700 mAh/g sustained after 50 cycles at variable current. These results pave the way for the introduction of microwave synthesis as realistic route for a rapid, low cost and up-scalable production of electrode material for Li batteries or other large scale application types.

  1. Estimation of the curvature of the solid liquid interface during Bridgman crystal growth (United States)

    Barat, Catherine; Duffar, Thierry; Garandet, Jean-Paul


    An approximate solution for the solid/liquid interface curvature due to the crucible effect in crystal growth is derived from simple heat flux considerations. The numerical modelling of the problem carried out with the help of the finite element code FIDAP supports the predictions of our analytical expression and allows to identify its range of validity. Experimental interface curvatures, measured in gallium antimonide samples grown by the vertical Bridgman method, are seen to compare satisfactorily to analytical and numerical results. Other literature data are also in fair agreement with the predictions of our models in the case where the amount of heat carried by the crucible is small compared to the overall heat flux.

  2. High performance infrared fast cooled detectors for missile applications (United States)

    Reibel, Yann; Espuno, Laurent; Taalat, Rachid; Sultan, Ahmad; Cassaigne, Pierre; Matallah, Noura


    SOFRADIR was selected in the late 90's for the production of 320×256 MW detectors for major European missile programs. This experience has established our company as a key player in the field of missile programs. SOFRADIR has since developed a vast portfolio of lightweight, compact and high performance JT-based solutions for missiles. ALTAN is a 384x288 Mid Wave infrared detector with 15μm pixel pitch, and is offered in a miniature ultra-fast Joule- Thomson cooled Dewar. Since Sofradir offers both Indium Antimonide (InSb) and Mercury Cadmium Telluride technologies (MCT), we are able to deliver the detectors best suited to customers' needs. In this paper we are discussing different figures of merit for very compact and innovative JT-cooled detectors and are highlighting the challenges for infrared detection technologies.

  3. Design of a thermophotovoltaic battery substitute (United States)

    Doyle, Edward F.; Becker, Frederick E.; Shukla, Kailash C.; Fraas, Lewis M.


    Many military platforms that currently use the BA-5590 primary battery or the BB-390A/U rechargeable battery are limited in performance by low storage capacity and long recharge times. Thermo Power Corporation, with team members JX Crystals and Essential Research Inc. is developing an advanced thermophotovoltaic (TPV) battery substitute that will provide higher storage capacity, lower weight, and instantaneous recharging (by refueling). The TPV battery substitute incorporates several advanced design features including: an evacuated and sealed enclosure for the emitter and PV cells to minimize unwanted convection heat transfer from the emitter to PV cells; selective tungsten emitter with a well matched gallium antimonide PV cell receiver; optical filter to recycle nonconvertible radiant energy; and a silicon carbide thermal recuperator to recover thermal energy from exhaust gases.

  4. Laser system for natural gas detection. Phase 1: Laboratory feasibility studies (United States)

    Grant, W. B.; Hinkley, E. D., Jr.


    This project demonstrated the feasibility of using laser remote sensing technology as a tool for leak survey work in natural gas distribution systems. A laboratory device was assembled using a pair of helium neon (HeNe) lasers to measure methane. One HeNe laser emits radiation at a wavelength of 3.3922 micrometers, which corresponds to a strong absorption feature of methane, while the other emits radiation at a wavelength of 3.3911 micrometers, which corresponds to a weak absorption by methane. As a particular area is scanned for leaks, the laser is pointed at convenient topographic targets within its operating range, about 25 m. A portion of the backscattered radiation is collected by a receiver and focused onto an indium antimonide (InSb) photodetector, cooled to 77K. Methane concentrations were determined from the differential absorption at the two wavelengths for the backscattered radiation.

  5. Manipulation of adsorbed atoms and creation of new structures on room-temperature surfaces with a scanning tunneling microscope. (United States)

    Whitman, L J; Stroscio, J A; Dragoset, R A; Celotta, R J


    A general method of manipulating adsorbed atoms and molecules on room-temperature surfaces with the use of a scanning tunneling microscope is described. By applying an appropriate voltage pulse between the sample and probe tip, adsorbed atoms can be induced to diffuse into the region beneath the tip. The field-induced diffusion occurs preferentially toward the tip during the voltage pulse because of the local potential energy gradient arising from the interaction of the adsorbate dipole moment with the electric field gradient at the surface. Depending upon the surface and pulse parameters, cesium (Cs) structures from one nanometer to a few tens of nanometers across have been created in this way on the (110) surfaces of gallium arsenide (GaAs) and indium antimonide (InSb), including structures that do not naturally occur.

  6. Quartz-enhanced photoacoustic spectroscopy sensor for ethylene detection with a 3.32 μm distributed feedback laser diode

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Ba, T.; Triki, M.; Vicet, A., E-mail: [Université de Montpellier, IES, UMR 5214, F-34000 Montpellier (France); CNRS, IES, UMR 5214, F-34000 Montpellier (France); Desbrosses, G. [LSTM, UMR 113, IRD, CIRAD, UM2, SupAgro, Université Montpellier 2, Place E. Baaillon, F-34095 Montpellier (France)


    An antimonide distributed feedback quantum wells diode laser operating at 3.32 μm at near room temperature in the continuous wave regime has been used to perform ethylene detection based on quartz enhanced photoacoustic spectroscopy. An absorption line centered at 3007.52 cm{sup −1} was investigated and a normalized noise equivalent absorption coefficient (1σ) of 3.09 10{sup −7} cm{sup −1} W Hz{sup −1/2} was obtained. The linearity and the stability of the detection have been evaluated. Biological samples’ respiration has been measured to validate the feasibility of the detection setup in an agronomic environment, especially on ripening apples.

  7. Nanomaterials for Electronics and Optoelectronics (United States)

    Koehne, Jessica E.; Meyyappan, M.


    Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

  8. Phase dependence of secondary electron emission at the Cs-Sb-Si (111) interface (United States)

    Govind, Govind; Kumar, Praveen; Shivaprasad, S. M.


    The multi-alkali antimonides adsorption on Si (111) surface has drawn much attention of several surface science studies due to its importance in both, fundamental and technological aspects of night vision devices & photocathodes. We report the formation of alkali metal antimonide ternary interface on Si(111)- 7×7 surface and in-situ characterization by X-ray Photoelectron Spectroscopy (XPS). The results show that Cs adsorption on clean Si(111) surface follows the layer-by-layer (Frank van der Merwe) growth mode at low flux rate, while Sb grows as islands (Volmer-Weber) on Cs/Si surface. The changes in the Si (2p) and Cs (3d) core level spectra show the formation of a ternary interface (Sb/Cs/Si) at room temperature, which is further confirmed by changes in the density of states in the valence band spectra. The temperature controlled desorption of ternary interface, by monitoring the chemical species remnant on the surface after annealing at different temperatures, reveal that the Sb islands desorb at 750° C, which implies a stronger Cs-Si bond to Cs-Sb bond. The work function changes from 3.9 eV to 0.8 eV for Cs adsorption on Si, which further reduces to 0.65 eV after Sb adsorption on the Cs/Si interface. The changes in work function corresponds to the compositional and chemical nature of the interface and thus indicate that the secondary electron emission is an extremely phase dependent phenomena.

  9. A new monolithic approach for mid-IR focal plane arrays (United States)

    Xie, Chengzhi; Pusino, Vincenzo; Khalid, Ata; Aziz, Mohsin; Steer, Matthew J.; Cumming, David R. S.


    Antimonide-based photodetectors have recently been grown on a GaAs substrate by molecular beam epitaxy (MBE) and reported to have comparable performance to the devices grown on more expensive InSb and GaSb substrates. We demonstrated that GaAs, in addition to providing a cost saving substrate for antimonide-based semiconductor growth, can be used as a functional material to fabricate transistors and realize addressing circuits for the heterogeneously grown photodetectors. Based on co-integration of a GaAs MESFET with an InSb photodiode, we recently reported the first demonstration of a switchable and mid-IR sensible photo-pixel on a GaAs substrate that is suitable for large-scale integration into a focal plane array. In this work we report on the fabrication steps that we had to develop to deliver the integrated photo-pixel. Various highly controllable etch processes, both wet and dry etch based, were established for distinct material layers. Moreover, in order to avoid thermally-induced damage to the InSb detectors, a low temperature annealed Ohmic contact was used, and the processing temperature never exceeded 180 °C. Furthermore, since there is a considerable etch step (> 6 μm) that metal must straddle in order to interconnect the fabricated devices, we developed an intermediate step using polyimide to provide a smoothing section between the lower MESFET and upper photodiode regions of the device. This heterogeneous technology creates great potential to realize a new type of monolithic focal plane array of addressable pixels for imaging in the medium wavelength infrared range without the need for flip-chip bonding to a CMOS readout chip.

  10. Behavior of GaSb (100) and InSb (100) surfaces in the presence of H2O2 in acidic and basic cleaning solutions (United States)

    Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo


    Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III-V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H2O2 plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H2O2 because gallium and indium are in the thermodynamically stable forms of H2GaO3- and InO2-, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H2O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of InSb with dilution of the APM solution was not significant. Additionally, the oxidation behavior of gallium and indium was more sensitive to the composition of the HPM and APM solutions than that of antimony. Therefore, the surface properties and etching characteristics of GaSb and InSb in HPM and APM solutions are mainly dependent on the behavior of the group III elements rather than the group V elements.

  11. Determination of thermal emission spectra maximizing thermophotovoltaic performance using a genetic algorithm

    CERN Document Server

    DeSutter, John; Francoeur, Mathieu


    Optimal radiator thermal emission spectra maximizing thermophotovoltaic (TPV) conversion efficiency and output power density are determined when temperature effects in the cell are considered. To do this, a framework is designed in which a TPV model that accounts for radiative, electrical and thermal losses is coupled with a genetic algorithm. The TPV device under study involves a spectrally selective radiator at a temperature of 2000 K, a gallium antimonide cell, and a cell thermal management system characterized by a fluid temperature and a heat transfer coefficient of 293 K and 600 Wm-2K-1. It is shown that a maximum conversion efficiency of 38.8% is achievable with an emission spectrum that has emissivity of unity between 0.719 eV and 0.763 eV and zero elsewhere. This optimal spectrum is less than half of the width of those when thermal losses are neglected. A maximum output power density of 41708 Wm-2 is achievable with a spectrum having emissivity values of unity between 0.684 eV and 1.082 eV and zero e...

  12. Fowler-Nordheim field emission effects in semiconductor nanostructures

    CERN Document Server

    Bhattacharya, Sitangshu


    This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The boo...

  13. Crystal structure of LuCu{sub 4-x}Sb{sub 2} (x = 1.053)

    Energy Technology Data Exchange (ETDEWEB)

    Fedyna, M.F. [Ukrainian National University of Forest and Wood Technology, Chuprynky str. 103, UA-79057, Lviv (Ukraine); Fedorchuk, A.O. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya str. 6, UA-79005 Lviv (Ukraine); Fedyna, L.O. [Lviv Institute of Economics and Tourism, Mentsynskoho str. 8, UA-79007 Lviv (Ukraine); Tokaychuk, Ya.O. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla i Mefodiya str. 6, UA-79005 Lviv (Ukraine)], E-mail:


    Crystal structure of new ternary antimonide LuCu{sub 4-x}Sb{sub 2} (x = 1.053(8)) was refined by means of powder diffraction method (diffractometer DRON-3M, Cu K{sub {alpha}}-radiation, R{sub B} = 4.09, {chi}{sup 2} = 1.92). It crystallizes in orthorhombic type of structure ErFe{sub 4}Ge{sub 2} (low-temperature modification): space group Pnnm, Pearson code oP14-2.11, a = 7.01189(14), b = 7.75061(15), c = 4.24323(8) A; Z = 2. Analysing the coordination environments of atoms it was shown, that investigated structure is an inclusion derivative of TiO{sub 2} structure type. TiO{sub 2}, NiAs, MnBi, Ag{sub 2}HgS{sub 2}, Ni{sub 2}In and RCu{sub 4-x}Sb{sub 2} (R Tm, Lu) structures belongs to the family of structures built up from the columns of filled octahedra and differ by the filling of space between them by different atoms or groups of atoms.

  14. Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET Based on Novel Channel Materials

    Directory of Open Access Journals (Sweden)

    Rakesh Prasher


    Full Text Available In this paper, we have studied a double gate nanoscale MOSFET for various channel materials using simulation approach. The device metrics considered at the nanometer scale are subthreshold swing (SS, drain induced barrier lowering (DIBL, on and off current, carrier injection velocity (vinj, etc. The channel materials studied are Silicon (Si, Germanium (Ge, Gallium Arsenide (GaAs, Zinc Oxide (ZnO, Zinc Sulfide (ZnS, Indium Arsenide (InAs, Indium Phosphide (InP and Indium Antimonide (InSb. The results suggest that InSb and InAs materials have highest Ion and lowest Ioff values when used in the channel of the proposed MOSFET. Besides, InSb has the highest values for Ion / Ioff ratio, vinj, transconductance (gm and improved short channel effects (SS = 59.71 and DIBL = 1.14, both are very close to ideal values. More results such as effect of quantum capacitance verses gate voltage (Vgs, drain current (Ids vs. gate voltage and drain voltage (Vds, ratio of transconductance (gm and drain current (Id vs. gate voltage, average velocity vs. gate voltage and injection velocity (Vinj for the mentioned channel materials have been investigated. Various results obtained indicate that InSb and InAs as channel material appear to be suitable for high performance logic and even low operating power requirements for future nanoscale devices as suggested by latest ITRS reports.

  15. Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature. (United States)

    Alam, Khan; Foley, Andrew; Smith, Arthur R


    In advanced compound semiconductor devices, such as in quantum dot and quantum well systems, detailed atomic configurations at the growth surfaces are vital in determining the structural and electronic properties. Therefore, it is important to investigate the surface reconstructions in order to make further technological advancements. Usually, conventional semiconductor surfaces (e.g., arsenides, phosphides, and antimonides) are highly reactive due to the existence of a high density of group V (anion) surface dangling bonds. However, in the case of nitrides, group III rich growth conditions in molecular beam epitaxy are usually preferred leading to group III (Ga)-rich surfaces. Here, we use low-temperature scanning tunneling microscopy to reveal a uniform distribution of native gallium adatoms with a density of 0.3%-0.5% of a monolayer on the clean, as-grown surface of nitrogen polar GaN(0001̅) having the centered 6 × 12 reconstruction. Unseen at room temperature, these Ga adatoms are strongly bound to the surface but move with an extremely low surface diffusion barrier and a high density saturation coverage in thermodynamic equilibrium with Ga droplets. Furthermore, the Ga adatoms reveal an intrinsic surface chirality and an asymmetric site occupation. These observations can have important impacts in the understanding of gallium nitride surfaces.

  16. Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

    Energy Technology Data Exchange (ETDEWEB)

    Meriggi, Laura, E-mail:; Ding, Ying; Thayne, Iain G.; Sorel, Marc [Electronic and Nanoscale Engineering, School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom); Steer, Matthew J. [Electronic and Nanoscale Engineering, School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom); Quantum Device Solutions, The West of Scotland Science Park, Block 7 Kelvin Campus, Glasgow G20 0TH (United Kingdom); MacGregor, Calum [Quantum Device Solutions, The West of Scotland Science Park, Block 7 Kelvin Campus, Glasgow G20 0TH (United Kingdom); Ironside, Charles N. [Department of Imaging and Applied Physics, Curtin University, Perth, Western Australia 6845 (Australia)


    We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in Al{sub x}In{sub 1−x}Sb, the resistivity of p-type material determines the 3-D distribution of current flow in the devices. This work shows that maximum light emission, as measured by electroluminescence, and 3-times wall-plug efficiency improvement were obtained at room temperature from devices with a p-type contact grid geometry with a spacing of twice the current spreading length in the p-type material, which was measured by spatially resolved photocurrent. The LED with the optimal contact geometry exhibits improved performance at high injection current levels thanks to the more uniform carrier distribution across the device area.

  17. Conceptual Design of 500 watt portable thermophotovoltaic power supply using JP-8 fuel (United States)

    DeBellis, Crispin L.; Scotto, Mark V.; Scoles, Stephen W.; Fraas, Lewis


    Babcock & Wilcox (B&W) and JX Crystals (JXC) have developed an innovative design for a compact, 500 watt net electric (We), 24-VDC thermophotovoltaic (TPV) power supply using JP-8 fuel. As currently envisioned, the TPV generator will be approximately 20 cm (8 inches) in diameter and 50 cm (20 inches) high, not including a fuel tank and controls. The total system may weigh as little as 7.5 kg (16.5 lb) without fuel. This system will achieve high efficiency and high power density relative to its size through the use of low bandgap gallium antimonide (GaSb) PV cells and a matched emitter. A thermally integrated fuel vaporizer and recuperator will boost system efficiency by transferring the unused energy in the exhaust stream to the incoming fuel and combustion air. At rated conditions and 500 We output, the system is expected to have an overall efficiency of 8% to 10%. This paper examines the trade-offs between system efficiency, power density, and weight required in the selection and configuration of the major system components.

  18. Component development for 500 watt diesel fueled portable thermophotovoltaic (TPV) power supply (United States)

    DeBellis, Crispin L.; Scotto, Mark V.; Fraas, Lewis; Samaras, John; Watson, Ron C.; Scoles, Stephen W.


    McDermott Technology, Inc. (MTI) and JX Crystals have developed an innovative design for a compact, 500-watt, thermophotovoltaic (TPV) power supply using diesel fuel. Under a contract with the Defense Advanced Research Projects Agency (DARPA) and managed by the U.S. Army Communications-Electronics Command (CECOM), this design is being reduced to hardware. Prototypes of the two main subsystems, the power converter assembly (PCA) and the burner/emitter/recuperator (BER), have been designed, fabricated, and tested. The PCA uses low-band-gap gallium antimonide (GaSb) photovoltaic (PV) cells for high efficiency and power density. The prototype PCA will be air cooled for system simplicity and portability. However, initial testing was performed on a water-cooled PCA. The BER uses a thermal vaporizer to produce a stable, high-intensity, low-emissions combustion zone inside an impervious emitter. A thermally integrated recuperator is utilized to boost system efficiency by transferring the unused energy in the exhaust stream to the incoming fuel and combustion air. This paper describes the design, testing and performance of the first-generation PCA and BER along with model predictions used for design and evaluation.

  19. MTI Focal Plane Assembly Design and Performance

    Energy Technology Data Exchange (ETDEWEB)

    Ballard, M.; Rienstra, J.L.


    The focal plane assembly for the Multispectral Thermal Imager (MTI) consists of sensor chip assemblies, optical filters, and a vacuum enclosure. Sensor chip assemblies, composed of linear detector arrays and readout integrated circuits, provide spatial resolution in the cross-track direction for the pushbroom imager. Optical filters define 15 spectral bands in a range from 0.45 {micro}m to 10.7 {micro}m. All the detector arrays are mounted on a single focal plane and are designed to operate at 75 K. Three pairs of sensor chip assemblies (SCAs) are required to provide cross-track coverage in all 15 spectral bands. Each pair of SCAs includes detector arrays made from silicon, iridium antimonide, and mercury cadmium telluride. Read out integrated circuits multiplex the signals from the detectors to 18 separate video channels. Optical filter assemblies defining the spectral bands are mounted over the linear detector arrays. Each filter assembly consists of several filter strips bonded together side-by-side. The MTI focal plane assembly has been integrated with the rest of the payload and has undergone detailed testing and calibration. This paper includes representative test data for the various spectral bands and the overall performance of the focal plane assembly.

  20. Investigation of a Spark Ignition Internal Combustion Engine via IR Spectroscopy (United States)

    Sakai, Stephen; White, Allen R.; Gross, Kevin; Devasher, Rebecca B.


    Previous work has shown that the automotive fuel components of isopropanoland ethanol can be excited by a 10.2 um and 9.3 um CO2 lasers, respectively. Through the use of a monochromator and an indium antimonide detector, the decay time of the excited molecules was measured and found to be significantly long enough to allow for the possibility of experimentation in an internal combustion (IC) engine. In order to pursue In Situ measurements in an internal combustion engine, a MegaTech Mark III transparent engine was modified with a sapphire combustion chamber. This modification will allow the transmission of infrared radiation for time-resolved spectroscopic measurements by an infrared spectrometer. By using a Telops FIRST-MWE imaging Fourier transform spectrometer, temporally and spatially resolved infrared spectral data can be acquired and compared for combustion in the engine both with and without laser excitation. Measurements performed with system provide insight into the energy transfer vectors that precede combustion as well as provide an in situ measurement of the progress of combustion.

  1. Ultra-thin metamaterial absorber with extremely bandwidth for solar cell and sensing applications in visible region (United States)

    Tang, Jingyao; Xiao, Zhongyin; Xu, Kaikai


    In this paper, we proposed a broadband and ultra-thin metamaterial absorber in the visible region. The absorber is composed of three layers, and the most remarkable difference is that the split ring resonators (SRR) made of metal stannum are encrusted in the indium antimonide (InSb) plane on the top layer. Numerical results reveal that a broadband absorption spectrum above 90% can be realized from 353.9 THz to 613.2 THz due to the coupling effect between the material of stannum and InSb. The metamaterial absorber is ultra-thin, having the total thickness of 56 nm, i.e. less than λ/10 with respect to the center frequency of the absorption band more than 90%. In addition, the impedance matching theory, surface current distributions, E-field and H-field are investigated to explain the physical mechanism of the absorption. The sensing applications are discussed and the simulated results show that the proposed absorber operates well with a good efficiency. Moreover, the visible absorber has potential applications in the aspects of solar energy harvest, integrated photodetectors and so on.

  2. GaSb film growth by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Cruz, M.L.; Martinez-Juarez, J.; Lopez-Salazar, P. [CIDS-ICUAP, BUAP, Av. 14 Sur y San Claudio, C.U. Edif.103C, Col. Sn Manuel, C.P. 72570, Puebla, Pue. (Mexico); Diaz, G.J. [Centro de Investigacion y Estudios Avanzados, IPN, Av. IPN 2508, Col. Sn. Pedro Zacatenco, C.P. 07360, D.F. (Mexico)


    Doped GaSb (Gallium Antimonide) films on p-GaSb substrates have been obtained by means of a low-cost and fast-growth method: the liquid phase epitaxy (LPE) technique. The growth temperature was 400 C, and the growth time was varied between1 and 5 min. Characterization of the films was performed by means of high resolution X-ray Diffraction, low temperature-photoluminescence and current-voltage curve measurements. The X-ray diffraction pattern confirms a zincblende-type crystal structure with a high-thin peak centred at 30.36 . The PL spectra at 27 K allowed to confirm the band-gap energy to be 0.8 eV and the I-V curves presented a PN junction behavior which corresponds to the obtained structured. Metal contacts of Au-Zn and Au-Ge were placed to perform electrical characterization (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Syntheses, structures and properties of the pnictide oxides R{sub 2}PnO{sub 2} (R = Ce, Pr; Pn = Sb, Bi)

    Energy Technology Data Exchange (ETDEWEB)

    Nuss, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, D-70569 Stuttgart (Germany); Jansen, M. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, D-70569 Stuttgart (Germany)], E-mail:


    Compounds with the chemical formula R{sub 2}PnO{sub 2} (R = Ce, Pr and Pn = Sb, Bi) were prepared by reactions between adequate amounts of Ce{sub 2}O{sub 3} (Pr{sub 4}O{sub 7}), Pn and RPn in sealed tantalum ampoules at 1770 K. Both bismuth compounds crystallize in the anti-ThCr{sub 2}Si{sub 2} type of structure (I4/mmm, tI10). In the case of R{sub 2}SbO{sub 2} a (4 x 4 x 1) super cell of the anti-ThCr{sub 2}Si{sub 2} structure type is observed. Compared with the basis structure, the antimony atoms are displaced from the ideal positions forming Sb-Sb bonds perpendicular to the c-axis. The magnetic susceptibility measurements indicate that the rare earth metals are in the trivalent state, and the electrical conductivity measurements show semiconducting behavior for R{sub 2}SbO{sub 2} and metallic conductivity for R{sub 2}BiO{sub 2}, respectively. Both, the Sb-Sb bond formation in the semiconducting antimonides, and the metallic conductivity of the bismuthides are in accordance with the description as [R{sup 3+}]{sub 2}[Pn{sup 2-}][O{sup 2-}]{sub 2}.

  4. Studies of electron diffusion in photo-excited Ni using time-resolved X-ray diffraction (United States)

    Persson, A. I. H.; Jarnac, A.; Wang, Xiaocui; Enquist, H.; Jurgilaitis, A.; Larsson, J.


    We show that the heat deposition profile in a laser-excited metal can be determined by time-resolved X-ray diffraction. In this study, we investigated the electron diffusion in a 150 nm thick nickel film deposited on an indium antimonide substrate. A strain wave that mimics the heat deposition profile is generated in the metal and propagates into the InSb, where it influences the temporal profile of X-rays diffracted from InSb. We found that the strain pulse significantly deviated from a simple exponential profile, and that the two-temperature model was needed to reproduce the measured heat deposition profile. Experimental results were compared to simulations based on the two-temperature model carried out using commercial finite-element software packages and on-line dynamical diffraction tools. To reproduce the experimental data, the electron-phonon coupling factor was lowered compared to previously measured values. The experiment was carried out at a third-generation synchrotron radiation source using a high-brightness beam and an ultrafast X-ray streak camera with a temporal resolution of 3 ps.

  5. Dispersion relations in heavily-doped nanostructures

    CERN Document Server

    Ghatak, Kamakhya Prasad


    This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also disc...

  6. Fast, High-Precision Readout Circuit for Detector Arrays (United States)

    Rider, David M.; Hancock, Bruce R.; Key, Richard W.; Cunningham, Thomas J.; Wrigley, Chris J.; Seshadri, Suresh; Sander, Stanley P.; Blavier, Jean-Francois L.


    The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

  7. Magnetic and Transport Properties of RESn xSb 2 ( RE=La, Ce, Pr, Nd, Sm; x=0.5, 0.7) (United States)

    Deakin, Laura; Ferguson, Michael J.; Sprague, Michael J.; Mar, Arthur; Sharma, R. D.; Jones, Colin H. W.


    The nonstoichiometric rare-earth tin antimonides RESnxSb2 (RE=La, Ce, Pr, Nd, Sm) were characterized by 119Sn Mössbauer spectroscopy and their transport and magnetic properties were measured. The presence of nearly zero-valent Sn is suggested by the similarity of the 119Sn Mössbauer parameters in LaSnxSb2 (0.1≤x≤0.7) to those of elemental β-Sn. All RESn0.7Sb2 compounds exhibit metallic behavior. CeSn0.7Sb2 and NdSn0.7Sb2 show drops in resistivity below 8 K; this is attributed to a transition to a magnetically ordered state. At 25 K, CeSn0.7Sb2 also displays a resistivity minimum characteristic of ordered Kondo lattices. Magnetic studies indicate that, below 4 K, CeSnxSb2 (x=0.5, 0.7) orders ferromagnetically, whereas NdSnxSb2 (x=0.5, 0.7) orders antiferromagnetically and undergoes a metamagnetic transition at HC=5.5 T and 2 K. Neither PrSnxSb2 nor SmSnxSb2 (x=0.5, 0.7) displays long-range magnetic ordering above 2 K.

  8. Oxidation resistant coatings for CoSb3 (United States)

    Zawadzka, K.; Godlewska, E.; Mars, K.; Nocun, M.


    Doped cobalt antimonides, are used as components of thermoelectric devices at temperatures not exceeding 450 °C because of poor thermal and chemical stability. In absence of oxygen they degrade by sublimation of antimony, while in air they easily oxidize to form volatile antimony oxides and non-volatile thick double oxide scales [1]. In both cases, protective coatings are indispensable to ensure safe performance of thermoelectric devices over extended times. The most promising solution, reported so far, is a thick aerogel coating, which practically stops antimony loss by sublimation. The assessment of coating effectiveness is generally based on thermogravimetric tests in vacuum, so permeability of oxygen and protection from oxidation cannot be evaluated. The paper presents investigations on the development of protective coatings, which would prevent oxidation of CoSb3. Two types of coatings were applied: magnetron sputtered Cr-Si thin layers [2] and thick enamel layers. Testing involved interrupted oxidation in air for 20-80 h at 500 °C and 600 °C. The Cr-Si thin layers appeared oxygen-tight at 500 °C while the enamel layers - even at 600 °C.

  9. Protective coatings for CoSb{sub 3}-base thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Godlewska, E.; Zawadzka, K.; Mars, K.; Nocun, M.; Opoka, A.; Wojciechowski, K. [AGH-UST, Krakow (Poland). Faculty of Materials Science and Ceramics


    Doped cobalt antimonides, are used as components of thermoelectric devices at temperatures not exceeding 450 C because of poor thermal and chemical stability. In absence of oxygen they degrade by sublimation of antimony, while in air they easily oxidize to form volatile antimony oxides and non-volatile thick double oxide scales. In both cases, protective coatings are indispensable to ensure safe performance of thermoelectric devices over extended times. The most promising solution, reported so far, is a thick aerogel coating, which practically stops antimony loss by sublimation. The assessment of coating effectiveness is generally based on thermogravimetric tests in vacuum, so no conclusion can be drawn about permeability of oxygen and oxidation prevention. The paper presents investigations on the development of protective coatings, which would prevent oxidation of CoSb{sub 3}. Two types of coatings were applied: magnetron sputtered Cr-Si thin layers and thick enamel layers. Testing involved interrupted oxidation in air for 20-80 h at 500 C and 600 C. The Cr-Si thin layers appeared oxygen-tight at 500 C while the enamel layers - even at 600 C. (orig.)

  10. InAs0.91Sb0.09 photoconductor for near and middle infrared photodetection (United States)

    Tong, Jinchao; Xie, Yiyang; Ni, Peinan; Xu, Zhengji; Qiu, Shupeng; Tobing, Landobasa Y. M.; Zhang, Dao-Hua


    Antimonide based III-V materials have been attracting great attention as they have wide applications covering photodetection, light source, photovoltaics and electronic devices. In this paper, we report on the structural and optical properties and photodetection performance of an InAsSb layer grown on a GaSb substrate by molecular beam epitaxy (MBE). An x-Ray diffraction (XRD) study shows that the Lattice-mismatch between the GaSb substrate and the InAsSb epitaxial layer is about 0.17% and the derived composition of Sb is about 0.09. Photoluminescence measurements at varied temperatures reveal that the energy band gap of the InAsSb material is about 0.33 eV and the luminescence peaks follow Bose-Einstein relation. The photoconductors fabricated based on the InAsSb/GaSb structure show spectral response ranging from NIR to MWIR range. They can work well at low voltage bias and the measured blackbody detectivitives are ˜2.4 × 107 cmHz1/2W-1 and ˜6.1 × 109 cmHz1/2W-1 at room temperature and 77 K, respectively.


    Energy Technology Data Exchange (ETDEWEB)

    Wiczer, M.; Lindenberg, A.


    THz pulses have provided a useful tool for probing the time-resolved dynamics of free carriers in a system. However, the development of methods to produce intense THz radiation has been slow. We have developed a method for producing intense ultra-short THz pulses, which have a full width at half maximum of 300 fs — approximately a half cycle of THz radiation. These intense half cycle pulses (HCPs) allowed us to use THz radiation as a source of excitation. By exposing the semiconductor indium antimonide (InSb) to intense THz HCP radiation, we have observed non-linear optical effects which suggest the generation of new free carriers by below band-gap THz photons. This generation of free carriers appears to be due to an avalanche multiplication process which then induces a current in the time-scale of our THz pulse. This amplifi cation on such a short timescale suggests the possibility of an ultrafast detector of weak above band-gap radiation. We constructed a device which detects these currents by painting an electrode structure on the surface of the semiconductor. The currents induced across the electrodes by this avalanche multiplication process were measured and compared with other measurements of this non-linear optical process. We successfully measured THz induced currents in InSb, suggesting promise towards the development of an ultra-fast detector. Further, we have gained insight into a possible physical explanation of the THz induced free carriers we observe in InSb.

  12. Microgap thermophotovoltaic systems with low emission temperature and high electric output (United States)

    Mirmoosa, M. S.; Omelyanovich, M.; Simovski, C. R.


    We theoretically show that a thermophotovoltaic (TPV) system enhanced by a wire metamaterial opens the door to a prospective microgap TPVs which will combine high electric output with relatively low temperatures of the emitter. The suggested system comprises an array of parallel metal nanowires grown on top of a photovoltaic semiconductor and standing free in the vacuum gap between the host dielectric layer and the emitter, so that their ends are sufficiently close to the emitting surface. Due to the resonant near-field coupling between this wire medium and the emitter and due to the optimized layered structure of the whole system, the strongly super-Planckian radiative heat flux of resonant nature is engineered. In the suggested system, heavily doped silicon and indium antimonide are considered as the materials for the emitter and the photovoltaic cell, respectively. Also, the parallel nanowires are made of tungsten. Employing the minority-carrier transport model, it is shown that a power output equal to 26 kW m-2 can be achieved when the temperature of the doped-silicon emitter is only 500 °C.

  13. Cancer risk assessment with a second-generation infrared imaging system (United States)

    Head, Jonathan F.; Lipari, Charles A.; Wang, Fen; Elliott, Robert L.


    Infrared imaging of the breasts for breast cancer risk assessment with a second generation amber indium antimonide focal plane staring array system was found to produce images superior to a first generation Inframetrics scanning mercury cadmium telluride system. The second generation system had greater thermal sensitivity, more elements in the image and greater dynamic range, which resulted in a greater ability to demonstrate asymmetric heat patterns in the breasts of women being screened for breast cancer. Chi-square analysis for independence of the results from 220 patients with both the scanning and focal plane infrared imaging systems demonstrated that the results from the two systems were strongly associated with each other (p equals .0001). However, the improved image from the second generation focal plane infrared imaging system allowed more objective and quantitative visual analysis, compared to the very subjective qualitative results from the first generation infrared imaging system. The improved image also resulted in an increase in the sensitivity for asymmetric heat patterns with the second generation focal plane system and yielded an increase in the percentage of patients with an abnormal asymmetric infrared image of the breasts from 32.7% with the scanning system to 50.5% with the focal plane system. The greater sensitivity and resolution of the digitized images from the second generation infrared imaging system has also allowed computer assisted image analysis of both breasts, breast quadrants and hot spots to produce quantitative measurements (mean, standard deviation, median, minimum and maximum temperatures) of asymmetric infrared abnormalities.

  14. Thin-film 'Thermal Well' Emitters and Absorbers for High-Efficiency Thermophotovoltaics

    CERN Document Server

    Tong, Jonathan K; Huang, Yi; Boriskina, Svetlana V; Chen, Gang


    A new approach is introduced to significantly improve the performance of thermophotovoltaic (TPV) systems by using low-dimensional thermal emitters and photovoltaic (PV) cells. By reducing the thickness of both the emitter and the PV cell, strong spectral selectivity in both thermal emission and absorption can be achieved by confining photons in trapped waveguide modes inside the thin-films that act as thermal analogs to quantum wells. Simultaneously, photo-excited carriers travel shorter distances across the thin-films reducing bulk recombination losses resulting in a lower saturation current in the PV cell. We predict a TPV efficiency enhancement with near-field coupling between the thermal emitter and the PV cell of up to 38.7% using a germanium (Ge) emitter at 1000 K and a gallium antimonide (GaSb) cell with optimized thicknesses separated by 100 nm. Even in the far-field limit, the efficiency is predicted to reach 31.5%, which is an order of magnitude higher than the Shockley Queisser limit of 1.6% for a...

  15. Characterization of Cs-Sb cathodes for high charge RF photoinjectors

    CERN Document Server

    AUTHOR|(CDS)2082505; Beghi, Marco

    Future accelerators such as CLIC (Compact LInear Collider), require high brightness electron beams that could be produced with a photoinjector (laser-driven electron source). Cs2Te photocathodes in combination with ultra-violet (UV) laser beams are currently used in many photoinjector facilities, but requirements to the electron sources for future accelerators like CLIC are more demanding. The main challenge for the CLIC drive beam photoinjector is to achieve high bunch charges (8.4 nC), high bunch repetition rates (500 MHz) within long trains (140 s) and with suciently long cathode lifetimes. In particular the laser pulse energy in UV, for such long pulse trains, is currently limited due to a degradation of the beam quality during the 4th harmonic frequency conversion process. Using the 2nd harmonic (green laser beam), provided it is matched with a low photoemission threshold photocathode material, would overcome this limitation. Cesium antimonide (Cs3Sb), being a photoemissive material in the visible range,...

  16. Photoconduction spectroscopy of p-type GaSb films

    Energy Technology Data Exchange (ETDEWEB)

    Shura, M.W., E-mail: [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Wagener, V.; Botha, J.R.; Wagener, M.C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)


    Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 {mu}m. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley-Read-Hall lifetime and maximum value of the surface recombination velocity.

  17. Fowler-Nordheim field emission. Effects in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Sitangshu [Indian Institute of Science, Bangalore (India). Nano Scale Device Research Laboratory; Ghatak, Kamakhya Prasad [Calcutta Univ. (India). Dept. of Electronics Science


    This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb{sub 2}, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi{sub 2}Te{sub 3}, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids. (orig.)

  18. High spatial resolution Hall sensor array for edge plasma magnetic field measurements (United States)

    Liu, Yuhong; Maurer, David A.; Navratil, Gerald A.; Rivera, Nicholas


    A one-dimensional, high-spatial resolution, 20-element Hall sensor array has been developed to directly measure the edge plasma perpendicular magnetic field and its fluctuations as a function of radius with 4-mm resolution. The array employs new small-area, high-sensitivity indium antimonide (InSb) Hall probes in combination with a high-density seven-layer printed circuit board to provide for connections to supply Hall current, record the measured Hall voltage output signals, and mitigate inductive pickup. A combination of bench and in situ measurements is described that provides absolute calibration of the diagnostic array in the presence of a strong transverse magnetic field component that is approximately 1000 times greater than the perpendicular fluctuating field needed to be resolved by the diagnostic. The Hall probes calibrated using this method are capable of magnetic field measurements with a sensitivity of 7V/T over the frequency band from 0 to 20 kHz.

  19. Ternary K2Zn5As4-type pnictides Rb2Cd5As4 and Rb2Zn5Sb4, and the solid solution Rb2Cd5(As,Sb)4. (United States)

    He, Hua; Stoyko, Stanislav S; Mar, Arthur; Bobev, Svilen


    Dirubidium pentacadmium tetraarsenide, Rb2Cd5As4, dirubidium pentazinc tetraantimonide, Rb2Zn5Sb4, and the solid-solution phase dirubidium pentacadmium tetra(arsenide/antimonide), Rb2Cd5(As,Sb)4 [or Rb2Cd5As3.00(1)Sb1.00(1)], have been prepared by direct reaction of the component elements at high temperature. These compounds are charge-balanced Zintl phases and adopt the orthorhombic K2Zn5As4-type structure (Pearson symbol oC44), featuring a three-dimensional [M5Pn4](2-) framework [M = Zn or Cd; Pn is a pnicogen or Group 15 (Group V) element] built of linked MPn4 tetrahedra, and large channels extending along the b axis which host Rb(+) cations. The As and Sb atoms in Rb2Cd5(As,Sb)4 are randomly disordered over the two available pnicogen sites. Band-structure calculations predict that Rb2Cd5As4 is a small-band-gap semiconductor and Rb2Zn5Sb4 is a semimetal.

  20. Segregation of antimony in InP in MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Weeke, Stefan


    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  1. Hole-dominated transport in InSb nanowires grown on high-quality InSb films (United States)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.


    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  2. Design optimization of bowtie nanoantenna for high-efficiency thermophotovoltaics (United States)

    Sarabandi, Kamal; Choi, Sangjo


    A novel matching technique and the field enhancement at the terminals of a bowtie nanoantenna are utilized to develop compact, highly efficient, and flexible thermophotovoltaic (TPV) cells. The bowtie antenna is designed for maximum power transfer to a near infrared band (1 μm to 2.2 μm) of a TPV cell using Indium Gallium Arsenide Antimonide (InGaAsSb). A nano-meter size block of InGaAsSb with a low bandgap energy of 0.52 eV is mounted at the terminals of the antenna. Such a load presents a frequency dependent impedance with a high resistance and capacitance at the desired frequency (180 THz). For maximum power transfer, a high impedance bowtie antenna operating at the anti-resonance mode in conjunction with an inductive stub is realized. The plasmonic behavior of the metal that tends to reduce the antenna size is partially compensated by the extra length needed to achieve the anti-resonance condition. At the desired band, the proposed nanoantenna loaded with InGaAsSb block shows an electric field intensity at the antenna terminals, which is approximately 23.5 times higher than the incident electric field intensity. This feature allows for development of efficient TPV cell and sensitive IR detectors. The infinite array of the bowtie antennas backed by a metallic reflector located at a quarter-wave behind the array is shown to absorb ˜95% of the incident power, which is more than 50% higher than the bulk InGaAsSb TPV cell. A novel configuration of the bowtie nanoantenna array is also presented that allows for collection of DC currents through an almost arbitrary parallel or series configuration of TPV cells without adversely affecting the IR performance of the individual antennas. In this scheme, elements can be arranged to be polarization dependent or independent.

  3. Free electron laser induced two-photon photoconductivity in Hg1-xCdxTe

    Institute of Scientific and Technical Information of China (English)

    YUAN; Xianzhang


    [1]Nathan, V., Guenther, A. H., Mitra, S. S., Review of multiphoton absortion in crystalline solids, J. Opt. Soc. Am. B, 1985, 2: 294—316.[2]Gibson, A. F., Hatch, C. B., Maggs, P. N. D. et al., Two-photon absorption in indium antimonide and germanium, J. Phys., C, 1976, 9: 3259—3275.[3]Miller, A., Johnston, A., Dempsey, J. et al., Two-photon absorption in InSb and Hg1-xCdxTe, J. Phys. C, 1929, 12: 4839—4849.[4]Burghoorn, J., Anderegg, V. F., Klaassen, T. O. et al., Free electron laser induced two-photon absorption in Hg1-xCdxTe, Appl. Phys. Lett., 1992, 61(19): 2320—2322.[5]Hui, Z. X., Yang, Z. H., Free Electron Laser (in Chinese), Beijing: National Defense Industry Press, 1995, 7—8.[6]Matter, J. C., Smirt, A. L., Scully, M. O., Saturable transmission in mercury cadmium telluride, Appl. Phys. Lett., 1976, 28(9): 507—509.[7]Nurmikko, A. V., Nonlinear absorption at 10.6 μm in Hg1-xCdxTe, Optics Communications, 1976, 18(4): 522—524.[8]Catalano, I. M., Cingolani, A., Minafra, A., Multiphoton transitions in ionic crystals, Phys. Rev. B, 1972, 5(4): 1629—1632.[9]Blakemore, J. S., Semiconductor Statistics, Oxford: Pergamon, 1962, 221—222.[10]Shen, S. C., Optical Property of Semiconductor (in Chinese), Beijing: Science Press, 1992, 392—394.

  4. MidIR and LWIR polarimetric sensor comparison study (United States)

    Gurton, Kristan; Felton, Melvin; Mack, Robert; LeMaster, Daniel; Farlow, Craig; Kudenov, Michael; Pezzaniti, Larry


    We present a comparative study involving five distinctly different polarimetric imaging platforms that are designed to record calibrated Stokes images (and associated polarimetric products) in either the MidIR or LWIR spectral regions. The data set used in this study was recorded during April 14-18, 2008, at the Russell Tower Measurement Facility, Redstone Arsenal, Huntsville, AL. Four of the five camera systems were designed to operate in the LWIR (approx. 8-12μm), and used either cooled mercury cadmium telluride (MCT) focal-plane-arrays (FPA), or a near-room temperature microbolometer. The lone MidIR polarimetric sensor was based on a liquid nitrogen (LN2) cooled indium antimonide (InSb) FPA, resulting in an approximate wavelength response of 3-5μm. The selection of cameras was comprised of the following optical designs: a LWIR "super-pixel," or division-of-focal plane (DoFP) sensor; two LWIR spinning-achromatic-retarder (SAR) based sensors; one LWIR division-of-amplitude (DoAM) sensor; and one MidIR division-of-aperture (DoA) sensor. Cross-sensor comparisons were conducted by examining calibrated Stokes images (e.g., S0, S1, S2, and degree-of-linear polarization (DOLP)) recorded by each sensor for a given target at approximately the same test periods to ensure that data sets were recorded under similar atmospheric conditions. Target detections are applied to the image set for each polarimetric sensor for further comparison, i.e., conventional receiver operating characteristic (ROC) curve analysis and an effective contrast ratio are considered.

  5. Development of a Multiband near-to-far Infrared Radiance COmparator (MIRCO) (United States)

    Joly, J.; Ridoux, P.; Hameury, J.; Lièvre, M.; Filtz, J.-R.


    In recent years, there has been a growing demand to calibrate industrial blackbodies both at short wavelengths for lower temperatures and at long wavelengths for higher temperatures. User requests cover a very wide temperature range, from -20°C to 1,500°C in the infrared bands used by thermal cameras or as defined by specific applications (especially the 1 3 μm, 3 5 μm, and 8 12 μm bands). Therefore, LNE (Laboratoire National de Métrologie et d’Essais) has developed a radiance comparator with a mirror-based optical system, an associated set of interference filter wheels, a modular holder for several infrared detectors, and a lock-in amplifier. This setup is designed to be very versatile in terms of wavelength and temperature. Targeted performances have a thermal resolution better than 0.05°C, and a known and controlled size-of-source effect (SSE). A silicon detector and a visible-to-near infrared integrating sphere were used to assess the stray light inside the housing, and supplementary baffles and stops were used to reduce it to an acceptable level. The investigation included measurement of the SSE for this comparator layout. Then, the performance in the 3 5 μm and 8 12 μm bands, using, respectively, indium antimonide (InSb) and mercury cadmium telluride (MCT) detectors, was evaluated using a water heat-pipe blackbody. This paper describes the modeling and the technical solutions implemented to optimize the optical system. Preliminary results are presented for the short-term stability, the thermal resolution between -20°C and 960°C, and also the SSE up to 60 mm in these bands.

  6. Microminiature rotary Stirling cryocooler for compact, lightweight, and low-power thermal imaging systems (United States)

    Filis, Avishai; Bar Haim, Zvi; Pundak, Nachman; Broyde, Ramon


    Novel compact and low power consuming cooled infrared thermal imagers as used in gyro-stabilized payloads of miniature unmanned aerial vehicles, Thermal small arms sights and tactical night vision goggles often rely on integral rotary micro-miniature closed cycle Stirling cryogenic engines. Development of EPI Antimonides technology and optimization of MCT technology allowed decreasing in order of magnitudes the level of dark current in infrared detectors thus enabling an increase in the optimal focal plane temperature in excess of 95K while keeping the same radiometric performances as achieved at 77K using regular technologies. Maintaining focal plane temperature in the range of 95K to 110K instead of 77K improves the efficiency of Stirling thermodynamic cycle thus enlarging cooling power and enabling the development of a mini micro cooler similar to RICOR's K562S model which is three times smaller, lighter and more compact than a standard tactical cryocooler like RICOR's K508 model. This cooler also features a new type of ball bearings and internal components which were optimized to fit tight bulk constraints and maintain the required life span, while keeping a low level of vibration and noise signature. Further, the functions of management the brushless DC motor and temperature stabilization are delivered by the newly developed high performance sensorless digital controller. By reducing Dewar Detector thermal losses and increasing the focal plane temperature, longer life time operation is expected as was proved with RICOR's K508 model. Resulting from this development, the RICOR K562S model cryogenic engine consumes 1.2 - 3.0 WDC while operating in the closed loop mode and maintaining the typical focal plane arrays at 200-100K. This makes it compatible with very compact battery packages allowing further reduction of the overall thermal imager weight thus making it comparable with the compatible uncooled infrared thermal imager relying on a microbolometer detector

  7. Advanced photovoltaic power systems using tandem GaAs/GaSb concentrator modules (United States)

    Fraas, L. M.; Kuryla, M. S.; Pietila, D. A.; Sundaram, V. S.; Gruenbaum, P. E.; Avery, J. E.; Dihn, V.; Ballantyne, R.; Samuel, C.


    In 1989, Boeing announced the fabrication of a tandem gallium concentrator solar cell with an energy conversion efficiency of 30 percent. This research breakthrough has now led to panels which are significantly smaller, lighter, more radiation resistant, and potentially less expensive than the traditional silicon flat plate electric power supply. The new Boeing tandem concentrator (BTC) module uses an array of lightweight silicone Fresnel lenses mounted on the front side of a light weight aluminum honeycomb structure to focus sunlight onto small area solar cells mounted on a thin back plane. This module design is shown schematically. The tandem solar cell in this new module consists of a gallium arsenide light sensitive cell with a 24 percent energy conversion efficiency stacked on top of a gallium antimonide infrared sensitive cell with a conversion efficiency of 6 percent. This gives a total efficiency 30 percent for the cell-stack. The lens optical efficiency is typically 85 percent. Discounting for efficiency losses associated with lens packing, cell wiring, and cell operating temperature still allows for a module efficiency of 22 percent which leads to a module power density of 300 Watts/sq. m. This performance provides more than twice the power density available from a single crystal silicon flat plate module and at least four times the power density available from amorphous silicon modules. The fact that the lenses are only 0.010 ft. thick and the aluminum foil back plane is only 0.003 ft. thick leads to a very lightweight module. Although the cells are an easy to handle thickness of 0.020 ft., the fact that they are small, occupying one-twenty-fifth of the module area, means that they add little to the module weight. After summing all the module weights and given the high module power, we find that we are able to fabricate BTC modules with specific power of 100 watts/kg.

  8. Special Issue featuring invited articles arising from UK Semiconductors 2012 (United States)

    Clarke, Edmund; Wada, Osamu


    Semiconductor research has formed the basis of many technological advances over the past 50 years, and the field is still highly active, as new material systems and device concepts are developed to address new applications or operating conditions. In addition to the development of traditional semiconductor devices, the wealth of experience with these materials also allows their use as an ideal environment for testing new physics, leading to new classes of devices exploiting quantum mechanical effects that can also benefit from the advantages of existing semiconductor technology in scalability, compactness and ease of mass production. This special issue features papers arising from the UK Semiconductors 2012 Conference, held at the University of Sheffield. The annual conference covers all aspects of semiconductor research, from crystal growth, through investigations of the physics of semiconductor structures to realization of semiconductor devices and their application in emerging technologies. The 2012 conference featured over 150 presentations, including plenary sessions on interband cascade lasers for the 3-6 µm spectral band, efficient single photon sources based on InAs quantum dots embedded in GaAs photonic nanowires, nitride-based quantum dot visible lasers and single photon sources, and engineering of organic light-emitting diodes. The seven papers collected here highlight current research advances, taken from across the scope of the conference. The papers feature growth of novel nitride-antimonide material systems for mid-infrared sources and detectors, use of semiconductor nanostructures for charge-based memory and visible lasers, optimization of device structures either to reduce losses in solar cells or achieve low noise amplification in transistors, design considerations for surface-emitting lasers incorporating photonic crystals and an assessment of laser power convertors for power transfer. The editors of this special issue and the conference

  9. Detached phenomenon: Its effect on the crystal quality of Ga{sub (1−x)}In{sub x}Sb bulk crystal grown by the VDS technique

    Energy Technology Data Exchange (ETDEWEB)

    Gadkari, Dattatray, E-mail: [Department of Physics, Mithibai College, Mumbai 400056 (India)


    Vertical directional solidification (VDS) technique is used on the combined growth principals of the conventional methods since 1994, which leads to the detached growth. For evaluation of the detached growth, five bulk ingots of indium doped gallium–antimonide GaSb:In (In = 0.5, 0.25, 0.15) have been grown – without the seed, without contact to the ampoule wall, without coating and without external pressure. The gap is attributed to compensate the differential thermal dilatation that is grown with the reduced diameter than the diameter of the ampoule. VDS experiments have been proved that the sum of the contact angle and growth angle is large enough to allow detachment without any additional pressure difference under the melt to offset hydrostatic pressure. A meniscus forms at the bottom of the melt, the capillarity effect establishes due to which spontaneous gap could be created by the melt free surface, thus no thermal shear stress and thermo-mechanical stresses at the interface. Detached grown bulk GaSb:In crystals showed superior crystal quality with the highest physical properties and mobility than the crystals grown ever. The axial and radial composition profile of the grown GaSb:In ingots showed variation ≤10%. From the conical region, dislocation density decreases in the growth direction and reaches less than 10{sup 3} cm{sup −2}. - Highlights: ► Detachment: without seed, without ampoule contact, without coating, without external pressure. ► Detached ingot growth samples showed the highest physical properties and the carrier mobility. ► Initial to final transition: in detached growth, dislocations decreases and less than 10{sup 3} cm{sup −2}. ► Detached samples: Raman spectrum shows only TO phonon (110) direction of single orientation. ► Detached ingot: FTIR shows highest transmissions % but decreases on increase doping in samples.

  10. Aspects of native oxides etching on n-GaSb(1 0 0) surface

    Energy Technology Data Exchange (ETDEWEB)

    Cotirlan, C., E-mail:; Ghita, R.V.; Negrila, C.C.; Logofatu, C.; Frumosu, F.; Lungu, G.A.


    Graphical abstract: - Highlights: • A technology for GaSb surface cleaning is proposed. • The technology combines ion sputtering, chemical etching, annealing for oxide removal. • The ARXPS studies on GaSb surfaces are presented in a detailed manner. • The surface stoichiometry is restored after recommended technology for contacting. - Abstract: Gallium antimonide (GaSb) is the basis of the most photovoltaic and thermophotovoltaic (TPV) systems and its innovative technological aspects based on modern ultra-high vacuum techniques are in trend for device achievement. The real surface of GaSb is modified by technological processes that can conduce to problems related to the reproducible control of its surface properties. The GaSb surface is reactive in atmosphere due to oxygen presence and exhibits a native oxide layer. The evolution of native oxides during the ion sputtering, chemical etching and thermal annealing processes for preparing the surface is presented in detailed way. Ratios of surface constituents are obtained by Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). Moreover, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Atomic Force Microscopy (AFM) and Low-Energy Electron Diffraction (LEED) are used for characterization. The surface stoichiometry is changed using a specific etchant (e.g. citric acid) at different etching time and is analyzed by ARXPS, SEM, EDS and AFM methods. The experimental results provide useful information regarding surface native oxides characteristics on n-GaSb(1 0 0) to be taken into account for development of low resistance contacts for TPV devices based on GaSb alloy.

  11. Antimony Based III-V Thermophotovoltaic Devices

    Energy Technology Data Exchange (ETDEWEB)

    CA Wang


    Antimony-based III-V thermophotovoltaic (TPV) cells are attractive converters for systems with low radiator temperature around 1100 to 1700 K, since these cells potentially can be spectrally matched to the thermal source. Cells under development include GaSb and the lattice-matched GaInAsSb/GaSb and InPAsSb/InAs quaternary systems. GaSb cell technology is the most mature, owing in part to the relative ease in preparation of the binary alloy compared to quaternary GaInAsSb and InPAsSb alloys. Device performance of 0.7-eV GaSb cells exceeds 90% of the practical limit. GaInAsSb TPV cells have been the primary focus of recent research, and cells with energy gap E{sub g} ranging from {approx}0.6 to 0.49 eV have been demonstrated. Quantum efficiency and fill factor approach theoretical limits. Open-circuit voltage factor is as high as 87% of the practical limit for the higher-E{sub g} cells, but degrades to below 80% with decreasing E{sub g} of the alloy, which might be due to Auger recombination. InPAsSb cells are the least studied, and a cell with E{sub g} = 0.45-eV has extended spectral response out to 4.3 {micro}m. This paper briefly reviews the main contributions that have been made for antimonide-based TPV cells, and suggests additional studies for further performance enhancements.

  12. Attempted Isolation, Spectroscopic Characterization, and Computational Study of Diazirinone (N2CO), its Analogs, and their Precursors (United States)

    Esselman, Brian J.; Nolan, Alex M.; Amberger, Brent K.; Shaffer, Chris J.; Woods, R. Claude; Stanton, John F.; McMahon, Robert J.


    research project has been used previously for the investigation of numerous small inorganic molecules and ions. The apparatus consists of a three-meter Pyrex discharge chamber with cylindrical electrodes at each end. The discharge operates at mTorr pressures and at temperatures as low as 77 K. The microwave signal is generated by a Gunn-diode microwave source, which is then further amplified and multiplied to reach the desired frequencies. The signal is focused onto a liquid-helium-cooled indium antimonide detector.

  13. Time-resolved X-ray diffraction with accelerator- and laser-plasma-based X-ray sources

    Energy Technology Data Exchange (ETDEWEB)

    Nicoul, Matthieu


    Femtosecond X-ray pulses are a powerful tool to investigate atomic motions triggered by femtosecond pump pulses. This thesis is dedicated to the production of such pulses and their use in optical pump - X-ray probe measurement. This thesis describes the laser-plasma-based sources available at the University of Duisburg-Essen. Part of it consists of the description of the design, built-up and characterization of a new ''modular'' X-ray source dedicated to optimize the X-ray flux onto the sample under investigation. The acoustic wave generation in femtosecond optically excited semiconductor (gallium arsenide) and metal (gold) was performed using the sources of the University of Duisburg-Essen. The physical answer of the material was modeled by a simple strain model for the semiconductor, pressure model for the metal, in order to gain information on the interplay of the electronic and thermal pressures rising after excitation. Whereas no reliable information could be obtain in gallium arsenide (principally due to the use of a bulk), the model for gold achieved very good agreement, providing useful information. The relaxation time of the electron to lattice energy was found to be (5.0{+-}0.3) ps, and the ratio of the Grueneisen parameters was found to be {gamma}{sub e} / {gamma}{sub i} = (0.5{+-}0.1). This thesis also describes the Sub-Picosecond Pulse Source (SPPS) which existed at the (formally) Stanford Linear Accelerator Center, an accelerator-based X-ray source, and two measurements performed with it. The first one is the detailed investigation of the phonon softening of the A{sub 1g} mode launch in bismuth upon fluence excitation. Detailed information concerning the new equilibrium position and phonon frequency were obtained over extended laser pump fluences. The second measurement concerned the study of the liquid phase dynamics in a newly formed liquid phase following ultrafast melting in indium antimonide. The formation of the liquid phase

  14. InSb纳米结构材料与器件进展与展望%Progress and prospect of the nano structure material and device

    Institute of Scientific and Technical Information of China (English)



    锑化铟(indium antimonide,熔点~525℃)是一种窄禁带半导体。由于其高的电子迁移率、小的有效质量及在极性III-V族材料中有最大的g因子,因而在高速器件、磁阻器件等方面具有潜在的电子学应用价值,而且已被广泛用于磁敏器件、红外探测器等。由于具有较大的波尔半径(60 nm),使得InSb纳米结构成为具有吸引力的进行量子效应研究的半导体。因为这些特性,已有一些关于InSb纳米结构生长的报道。本文描述了近期InSb纳米结构生长的情况。透射电子显微镜等形貌像显示纳米结构为纳米晶体或纳米线,器件制备和性能测试显示其下一步的应用能力。%Indium antimonide(InSb)(melting point~525 ℃)is a narrow bandgap semiconductor,and it is well known for its highest bulk electron mobility,smallest effective mass,and largest g factor among binary III-V materials.It therefore has potential electronic applications in high-speed devices and magnetoresistors,and has been used previous-ly as magnetic sensors and infrared(IR)detectors.It also has a large Bohr exciton radius of 60 nm,consequently mak-ing InSb nanostructure an attractive semiconductor for quantum effect studies.For its interesting properties,some work has been reported on the growth of InSb nanostructure.The recent growth of InSb nanostructure is described in this re-view.Transmission electron microscopy showed the nanostructure to be nanocrystal or nanowires.Device fabrication and characteristics show the application capability of next step.

  15. The iron-age of superconductivity: structural correlations and commonalities among the various families having -Fe-Pn- slabs (Pn = P, As and Sb). (United States)

    Ganguli, Ashok K; Prakash, Jai; Thakur, Gohil S


    )Pn(2), AFFePn and A(4)M(2)M'Fe(2)As(2)O(6)etc.) known today and have also included the phosphides and antimonides other than the arsenides. We have in addition discussed in detail the various factors like pressure, hole and electron doping, transition metal doping, which have not been reviewed earlier.

  16. Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions (United States)

    Zheng, Lucy; Tidrow, Meimei; Aitcheson, Leslie; O'Connor, Jerry; Brown, Steven


    The antimonide superlattice infrared detector technology program was established to explore new infrared detector materials and technology. The ultimate goal is to enhance the infrared sensor system capability and meet challenging requirements for many applications. Certain applications require large-format focal plane arrays (FPAs) for a wide field of view. These FPAs must be able to detect infrared signatures at long wavelengths, at low infrared background radiation, and with minimal spatial cross talk. Other applications require medium-format pixel, co-registered, dual-band capability with minimal spectral cross talk. Under the technology program, three leading research groups have focused on device architecture design, high-quality material growth and characterization, detector and detector array processing, hybridization, testing, and modeling. Tremendous progress has been made in the past few years. This is reflected in orders-of-magnitude reduction in detector dark-current density and substantial increase in quantum efficiency, as well as the demonstration of good-quality long-wavelength infrared FPAs. Many technical challenges must be overcome to realize the theoretical promise of superlattice infrared materials. These include further reduction in dark current density, growth of optically thick materials for high quantum efficiency, and elimination of FPA processing-related performance degradation. In addition, challenges in long-term research and development cost, superlattice material availability, FPA chip assembly availability, and industry sustainability are also to be met. A new program was established in 2009 with a scope that is different from the existing technology program. Called Fabrication of Superlattice Infrared FPA (FastFPA), this 4-year program sets its goal to establish U.S. industry capability of producing high-quality superlattice wafers and fabricating advanced FPAs. It uses horizontal integration strategy by leveraging existing III

  17. On the crystal structure and physical properties of the UFeSb{sub 2} compound

    Energy Technology Data Exchange (ETDEWEB)

    Gonçalves, A.P., E-mail: [C2TN, Instituto Superior Técnico, Universidade de Lisboa, CFMC-UL, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS (Portugal); Henriques, M.S.; Waerenborgh, J.C. [C2TN, Instituto Superior Técnico, Universidade de Lisboa, CFMC-UL, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS (Portugal); Curlik, I.; Il’kovič, S.; Reiffers, M. [Faculty of Humanities and Natural Sciences, Prešov University, 081 16 Prešov (Slovakia)


    Highlights: • Polycrystalline UFeSb{sub 2} was prepared by conventional arc-melting route. • An accurate crystal structure characterization of UFeSb{sub 2} was made. • UFeSb{sub 2} has a ferromagnetic-type transition at 31(1) K. • The ferromagnetic-like properties of UFeSb{sub 2} are determined by the U-sublattice. • Specific heat shows that UFeSb{sub 2} is a medium correlated electron system. - Abstract: The UFeSb{sub 2} ternary uranium antimonide has been prepared by arc-melting, followed by annealing at 750 °C for 1 week, and was characterized by means of powder X-ray diffraction, electrical resistivity, magnetization, Mössbauer spectroscopy and specific heat measurements. UFeSb{sub 2} crystallizes in the tetragonal HfCuSi{sub 2}-type structure (space group P4/nmm, a = 0.43249(3) nm, c = 0.90962(7) nm), with the U, Fe and Sb atoms at the positions of Hf (2c), Cu (2b) and Si (2a and 2c), respectively. The nearest neighbor atoms of U are at distances close to or higher than the metallic radii sum, pointing to the possibility of a non negligible U magnetic moment, which contrasts with the very short Fe–Sb1 distances that indicate a probable collapse of Fe magnetic moments. The UFeSb{sub 2} undergoes a ferromagnetic-type transition at 31(1) K with a small saturation magnetization, suggesting for this compound a non-negligible U hybridization, itinerant magnetism and/or a complex magnetic structure. Mössbauer spectroscopy confirms that the magnetism is ruled by the U sub-lattice, with neither long-range magnetic ordering nor standard spin-glass behavior of the iron sub-lattice. The Sommerfeld coefficient of the electronic specific heat is γ = 51(1) mJ/mol K{sup 2}, which classifies this compound as a medium correlated system.

  18. Interaction of coal-derived synthesis gas impurities with solid oxide fuel cell metallic components (United States)

    Marina, Olga A.; Pederson, Larry R.; Coyle, Christopher A.; Edwards, Danny J.; Chou, Yeong-Shyung; Cramer, Carolyn N.

    Oxidation-resistant alloys find use as interconnect materials, heat exchangers, and gas supply tubing in solid oxide fuel cell (SOFC) systems, especially when operated at temperatures below ∼800 °C. If fueled with synthesis gas derived from coal or biomass, such metallic components could be exposed to impurities contained in those fuel sources. In this study, coupons of ferritic stainless steels Crofer 22 APU and SS 441, austenitic nickel-chromium superalloy Inconel 600, and an alumina-forming high nickel alloy alumel were exposed to synthesis gas containing ≤2 ppm phosphorus, arsenic and antimony, and reaction products were tested. Crofer 22 APU coupons coated with a (Mn,Co) 3O 4 protective layer were also evaluated. Phosphorus was found to be the most reactive. On Crofer 22 APU, the (Mn,Cr) 3O 4 passivation layer reacted to form an Mn-P-O product, predicted to be manganese phosphate from thermochemical calculations, and Cr 2O 3. On SS 441, reaction of phosphorus with (Mn,Cr) 3O 4 led to the formation of manganese phosphate as well as an Fe-P product, predicted from thermochemical calculations to be Fe 3P. Minimal interactions with antimony or arsenic in synthesis gas were limited to Fe-Sb and Fe-As solid solution formation. Though not intended for use on the anode side, a (Mn,Co) 3O 4 spinel coating on Crofer 22 APU reacted with phosphorus in synthesis gas to produce products consistent with Mn 3(PO 4) 2 and Co 2P. A thin Cr 2O 3 passivation layer on Inconel 600 did not prevent the formation of nickel phosphides and arsenides and of iron phosphides and arsenides, though no reaction with Cr 2O 3 was apparent. On alumel, an Al 2O 3 passivation layer rich in Ni did not prevent the formation of nickel phosphides, arsenides, and antimonides, though no reaction with Al 2O 3 occurred. This work shows that unprotected metallic components of an SOFC stack and system can provide a sink for P, As and Sb impurities that may be present in fuel gases, and thus complicate

  19. Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Huffaker, Diana [Univ. of California, Los Angeles, CA (United States); Hubbard, Seth [Rochester Inst. of Technology, NY (United States); Norman, Andrew [National Renewable Energy Lab. (NREL), Golden, CO (United States)


    This project aimed to develop solar cells that can help reduce cost per watt. This work focused on developing solar cells that utilize quantum dot (QD) nanomaterials to provide multijunction solar cell efficiency at the cost of single junction solar cell. We focused on a novel concept known as intermediate band solar cells (IBSC) where an additional energy band is inserted in a single solar cell to accommodate sub-bandgap photons absorption which otherwise are lost through transmission. The additional energy band can be achieved by growing QDs within a solar cell p-n junction. Though numerous studies have been conducted to develop such QD systems, very small improvements in solar energy conversion efficiency have been reported. This is mainly due to non-optimal material parameters such as band gap, band offset etc. In this work, we identified and developed a novel QD material system that meets the requirements of IBSC more closely than the current state-of-the-art technology. To achieve these goals, we focused on three important areas of solar cell design: band structure calculations of new materials, efficient device design for high efficiency, and development of new semiconductor materials. In this project, we focused on III-Sb materials as they possess a wide range of energy bandgaps from 0.2 eV to 2eV. Despite the difficulty involved in realizing these materials, we were successfully developed these materials through a systematic approach. Materials studied in this work are AlAsSb (Aluminum Arsenide Antimonide), InAlAs (Indium Aluminum Arsenide) and InAs (Indium Arsenide). InAs was used to develop QD layers within AlAsSb and InAlAs p-n junctions. As the QDs have very small volume, up to 30 QD layers been inserted into the p-n junction to enhance light absorption. These QD multi-stack devices helped in understanding the challenges associated with the development of quantum dot solar cells. The results from this work show that the quantum dot solar cells indeed

  20. Materials growth and characterization of thermoelectric and resistive switching devices (United States)

    Norris, Kate J.

    erbium monoantimonide (ErSb) thin films with thermal conductivities close to or slightly smaller than the alloy limit of the two ternary alloy hosts. Second we consider an ex-situ monitoring technique based on glancing-angle infrared-absorption used to determine small amounts of erbium antimonide (ErSb) deposited on an indium antimonide (InSb) layer, a concept for thermoelectric devices to scatter phonons. Thirdly we begin our discussion of nanowires with the selective area growth (SAG) of single crystalline indium phosphide (InP) nanopillars on an array of template segments composed of a stack of gold and amorphous silicon. Our approach enables flexible and scalable nanofabrication using industrially proven tools and a wide range of semiconductors on various non-semiconductor substrates. Then we examine the use of graphene to promote the growth of nanowire networks on flexible copper foil leading to the testing of nanowire network devices for thermoelectric applications and the concept of multi-stage devices. We present the ability to tailor current-voltage characteristics to fit a desired application of thermoelectric devices by using nanowire networks as building blocks that can be stacked vertically or laterally. Furthermore, in the study of our flexible nanowire network multi-stage devices, we discovered the presence of nonlinear current-voltage characteristics and discuss how this feature could be utilized to increase efficiency for thermoelectric devices. This work indicates that with sufficient volume and optimized doping, flexible nanowire networks could be a low cost semiconductor solution to our wasted heat challenge. Resistive switching devices are two terminal electrical resistance switches that retain a state of internal resistance based on the history of applied voltage and current. The occurrence of reversible resistance switching has been widely studied in a variety of material systems for applications including nonvolatile memory, logic circuits, and

  1. Laser-based sensors on UAVs for quantifying local emissions of greenhouse gases (United States)

    Zondlo, Mark; Tao, Lei; O'Brien, Anthony; Ross, Kevin; Khan, Amir; Pan, Da; Golston, Levi; Sun, Kang; DiGangi, Josh


    well above the surface (up to 100 m). In addition, plumes were very narrow horizontally (10-30 m width) within 200 m of the emission origin. By using a mass balance approach of upwind versus downwind CH4 concentrations, coupled to meteorological wind data, the CH4 emission rate from the compressor station averaged 13 ± 5 g CH4 s-1, consistent with individual, leak surveys measured within the compressor station itself. More recently, we developed a mid-infrared version of the same sensor using an antimonide laser at 3.3 microns. This sensor has a precision of 2 ppbv CH4 at 10 Hz, a mass of 1.3 kg, and consumes 10 W of power. Flight tests show the improved precision is capable of detecting methane leaks from landfills and cattle feedlots at higher altitudes (500 m) and greater distances downwind (several km) than the near infrared CH4 sensor. Sampling strategy is particularly important for not only UAS-based flight patterns but also sensor design. Many tradeoffs exist between the sampling density of the flight pattern, sensor precision, accuracy of wind data, and geographic isolation of the source of interest, and these will be discussed in the context of airborne-based CH4 measurements in the field. The development of compact yet robust trace gas sensors to be deployed on small UAS opens new capabilities for atmospheric sensing such as quantifying local source emissions (e.g. farms, well pads), vertical profiling of trace gases in a forest canopy, and trace gas distributions in complex areas (mountains, urban canyons).

  2. Mid-Infrared Reflectance Imaging of Thermal-Barrier Coatings (United States)

    Edlridge, Jeffrey I.; Martin, Richard E.


    An apparatus for mid-infrared reflectance imaging has been developed as means of inspecting for subsurface damage in thermal-barrier coatings (TBCs). The apparatus is designed, more specifically, for imaging the progression of buried delamination cracks in plasma-sprayed yttria-stabilized zirconia coatings on turbine-engine components. Progression of TBC delamination occurs by the formation of buried cracks that grow and then link together to produce eventual TBC spallation. The mid-infrared reflectance imaging system described here makes it possible to see delamination progression that is invisible to the unaided eye, and therefore give sufficiently advanced warning before delamination progression adversely affects engine performance and safety. The apparatus (see figure) includes a commercial mid-infrared camera that contains a liquid-nitrogen-cooled focal plane indium antimonide photodetector array, and imaging is restricted by a narrow bandpass centered at wavelength of 4 microns. This narrow wavelength range centered at 4 microns was chosen because (1) it enables avoidance of interfering absorptions by atmospheric OH and CO2 at 3 and 4.25 microns, respectively; and (2) the coating material exhibits maximum transparency in this wavelength range. Delamination contrast is produced in the midinfrared reflectance images because the introduction of cracks into the TBC creates an internal TBC/air-gap interface with a high diffuse reflectivity of 0.81, resulting in substantially higher reflectance of mid-infrared radiation in regions that contain buried delamination cracks. The camera is positioned a short distance (.12 cm) from the specimen. The mid-infrared illumination is generated by a 50-watt silicon carbide source positioned to the side of the mid-infrared camera, and the illumination is collimated and reflected onto the specimen by a 6.35-cm-diameter off-axis paraboloidal mirror. Because the collected images are of a steady-state reflected intensity (in

  3. Material Engineering for Phase Change Memory (United States)

    Cabrera, David M.

    As semiconductor devices continue to scale downward, and portable consumer electronics become more prevalent there is a need to develop memory technology that will scale with devices and use less energy, while maintaining performance. One of the leading prototypical memories that is being investigated is phase change memory. Phase change memory (PCM) is a non-volatile memory composed of 1 transistor and 1 resistor. The resistive structure includes a memory material alloy which can change between amorphous and crystalline states repeatedly using current/voltage pulses of different lengths and magnitudes. The most widely studied PCM materials are chalcogenides - Germanium-Antimony-Tellerium (GST) with Ge2Sb2Te3 and Germanium-Tellerium (GeTe) being some of the most popular stochiometries. As these cells are scaled downward, the current/voltage needed to switch these materials becomes comparable to the voltage needed to sense the cell's state. The International Roadmap for Semiconductors aims to raise the threshold field of these devices from 66.6 V/mum to be at least 375 V/mum for the year 2024. These cells are also prone to resistance drift between states, leading to bit corruption and memory loss. Phase change material properties are known to influence PCM device performance such as crystallization temperature having an effect on data retention and litetime, while resistivity values in the amorphous and crystalline phases have an effect on the current/voltage needed to write/erase the cell. Addition of dopants is also known to modify the phase change material parameters. The materials G2S2T5, GeTe, with dopants - nitrogen, silicon, titanium, and aluminum oxide and undoped Gallium-Antimonide (GaSb) are studied for these desired characteristics. Thin films of these compositions are deposited via physical vapor deposition at IBM Watson Research Center. Crystallization temperatures are investigated using time resolved x-ray diffraction at Brookhaven National Laboratory

  4. Development of III-Sb based technologies for p-channel MOSFET in CMOS applications (United States)

    Madisetti, Shailesh Kumar

    --V characteristics with a similarly low Dit˜1--2x1012 cm 2eV-1 were demonstrated without IPL. Next, biaxial compressive strain on InxGa1-xSb quantum wells were studied by varying In composition and studying Hall mobility to understand major scattering mechanisms in surface and buried MBE grown strained InGaSb quantum well (QW) MOSFET channels with in-situ grown Al 2O3 gate oxide are analyzed as a function of sheet hole density, top-barrier thickness and temperature. Mobility dependence on Al0.8Ga 0.2Sb top-barrier thickness shows that the relative contribution of interface-related scattering is as low as ˜30% in the surface QW channel. An InAs top capping layer reduces the interface scattering even further; the sample with 3 nm total top-barrier thickness demonstrates mobility of 980 cm2/Vs giving sheet resistance of 4.3 kO/sq, very close to the minimum QW resistance in the bulk. The mobility--temperature dependences indicate that the interface-related scattering is dominated by remote Coulomb scattering at hole densities silicon has been studied with the goal to improve the quality of group III-antimonide heteroepitaxial materials for III-Sb CMOS to assess various metamorphic buffer layer technologies, evaluate baseline for density of related defects and surface morphology, uncover their effect on electrical properties, provide baseline for futuristic growth of III-V integration on a common platform.