WorldWideScience

Sample records for antimonides

  1. Electro-spark machining of cadmium antimonide

    International Nuclear Information System (INIS)

    Ivanovskij, V.N.; Stepakhina, K.A.

    1975-01-01

    Experimental data on electrical erosion of the semiconductor material (cadmium antimonide) alloyed with tellurium are given. The potentialisies and expediency of using the electric-spark method of cutting cadmium antimonide ingots with the resistivity of 1 ohm is discussed. Cutting has been carried out in distilled water and in the air

  2. MBE System for Antimonide Based Semiconductor Lasers

    National Research Council Canada - National Science Library

    Lester, Luke

    1999-01-01

    .... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

  3. State of rare earth impurities in gallium and indium antimonides

    International Nuclear Information System (INIS)

    Evgen'ev, S.B.; Kuz'micheva, G.M.

    1990-01-01

    State of rare earth impurities in indium and gallium antimonides was studied. Results of measuring density and lattice parameter of samples in GaSb-rare earth and InSb-rare earth systems are presented. It is shown that during rare earth dissolution in indium and gallium antimonides rare earth atoms occupy interstitial positions or, at least, are displaced from lattice points

  4. Indium antimonide based HEMT for RF applications

    International Nuclear Information System (INIS)

    Subash, T. D.; Gnanasekaran, T.

    2014-01-01

    We report on an indium antimonide high electron mobility transistor with record cut-off frequency characteristics. For high frequency response it is important to minimize parasitic resistance and capacitance to improve short-channel effects. For analog applications adequate pinch-off behavior is demonstrated. For proper device scaling we need high electron mobility and high electron density. Toward this end, the device design features and simulation are carried out by the Synopsys TCAD tool. A 30 nm InSb HEMT exhibits an excellent cut-off frequency of 586 GHz. To the knowledge of the authors, the obtained cut-off frequency is the highest ever reported in any FET on any material system. (semiconductor materials)

  5. Self- and zinc diffusion in gallium antimonide

    International Nuclear Information System (INIS)

    Nicols, Samuel Piers

    2002-01-01

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT

  6. Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications

    Energy Technology Data Exchange (ETDEWEB)

    Saroop, Sudesh [Rensselaer Polytechnic Inst., Troy, NY (United States)

    1999-09-01

    Recombination processes in antimonide-based (TPV) devices have been investigated using a technique, in which a Nd-YAG pulsed laser is materials for thermophotovoltaic radio-frequency (RF) photoreflectance used to excite excess carriers and the short-pulse response and photoconductivity decay are monitored with an inductively-coupled non-contacting RF probe. The system has been used to characterize surface and bulk recombination mechanisms in Sb-based materials.

  7. Annealing of defects in indium antimonide after ion bombardment

    International Nuclear Information System (INIS)

    Bogatyrev, V.A.; Kachurin, G.A.

    1977-01-01

    Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

  8. Research on structure and electrical parameters of indium antimonide films

    International Nuclear Information System (INIS)

    Mukhametniyazova, A.; Konyaeva, V.F.; Sukhanov, S.; Ashirov, A.; Aleksanyan, S.N.

    1980-01-01

    Results of investigations into the effect of conditions of formation of indium antimonide films prepared by thermal vacuum spraying on their structure, phase composition and electric parameters, are presented. The method of studying the synthesized semiconductor layers on the DRON-0.5 X-ray device with CoKsub(α)-radiation is tested. The dependence of structure, phase composition and electric properties of InSb layers 1+3 μm thick sprayed on ferrite substrates on condensation temperature, is established. Hexagonal InSb modification is found

  9. Anomalous behaviour of screw dislocations in quenched indium antimonide monocrystals

    International Nuclear Information System (INIS)

    Alekseenko, V.I.; Mostovoj, V.M.

    1991-01-01

    Anomalies of screw dislocation mobility in indium antimonide single crystals quenched after annealing were detected experimentally. Taking into accout specific nature of thermal treatment an enhanced attention is paid to the technique of the experiment. It is shown that the observed peculiarities can be explained using a model of thermoactivated movement of excessive bends over stoppers at the dislocation line. Proceeding from the assumption on the nature of stoppers, the values of stopper energy barriers overcome by an excessive bend are determined on the basis of the above model of excessive bend movement

  10. Research on structure and electrical parameters of indium antimonide films

    Energy Technology Data Exchange (ETDEWEB)

    Mukhametniyazova, A; Konyaeva, V F; Sukhanov, S; Ashirov, A; Aleksanyan, S N [AN Turkmenskoj SSR, Ashkhabad. Fiziko-Tekhnicheskii Inst.

    1980-01-01

    Results of investigations into the effect of conditions of formation of indium antimonide films prepared by thermal vacuum spraying on their structure, phase composition and electric parameters, are presented. The method of studying the synthesized semiconductor layers on the DRON-0.5 X-ray device with CoKsub(..cap alpha..)-radiation is tested. The dependence of structure, phase composition and electric properties of InSb layers 1+3 ..mu..m thick sprayed on ferrite substrates on condensation temperature, is established. Hexagonal InSb modification is found.

  11. Indium antimonide crystal defects formed by fast neutron irradiation

    International Nuclear Information System (INIS)

    Vitovskij, N.A.; Dolgolenko, A.P.; Mashovets, T.V.; Oganesyan, O.V.

    1979-01-01

    It is shown, that indium antimonide irradiation with fast neutrons of reactor results in the formation of disorded regions with a mean radius of approximately 130 A surrounded with space charge regions forming barriers for main carriers. But the found values of defect cluster depolarization coefficient (Lsub(x)sup(n)=0.18 and Lsub(x)sup(p)=0.29) show, that the clusters have marked conductivity for main charge carriers. The found position of the Fermi level in the disorded regions Esub(F)=Esub(c)-0.085 eV does not depend on the impurity type and its concentration in an initial material. The disorded regions play the main part in charge carrier scattering at low temperatures and markedly contribute to the change of mobility at 80 K. It is found, that irradiation temperature change in the range from 77 to 300 K does not effect practically on the disorded region parameters

  12. Zinc Antimonides and Copper Chalcogenides as Thermoelectric Materials

    DEFF Research Database (Denmark)

    Blichfeld, Anders Bank

    2017-01-01

    , and linked with the physical properties. The materials crystallography approach, relating physical properties with a structural understating, has been applied in this thesis for two highly interesting materials systems, zinc antimonides and copper chalcogenides. Both of these systems are high profiled....... The preparation parameters used, have a large influence on the homogeneity of the products, and new electric phases were identified and studied for ZnSb. For the samples prepared by physical vapor deposition, the growth takes place under non-thermodynamic conditions, making it possible to access kinetically...... intensity X-ray radiation at large international facilities, making it possible to measure pair distribution function data directly on thin-film samples in a normal incident setup, termed tfPDF. The tfPDF method was demonstrated on the iron antimony system. tfPDF was developed even further to include...

  13. Study on actinoid isolation by antimonide ion exchanger

    Energy Technology Data Exchange (ETDEWEB)

    Tsuji, Masamichi [Tokyo Inst. of Tech. (Japan). Faculty of Science; Kubota, Masumitsu; Yamagishi, Isao

    1996-01-01

    To establish a containment of long-life nuclides and an effective reduction of waste volume is important to reduce the loadings on the natural environment. Chemical isolation of radioactive nuclides from wastes was attempted by using inorganic ion exchanger with high specificity and thermal stability. In this study, titanium antimonide was used as an ion exchanger to investigate the adsorption of trivalent metallic ions according to Kielland plot curves. When the ionic equivalent fraction (X-bar{sub M}) was around 0.005, Kielland plot curve of either of 3-valent metallic ions was bent, suggesting the exchanger had two different adsorption sites. The slope of the curve became smaller as an elevation of temperature. These results show that the ion radius was decreased resulting from partial elimination of the hydrated water of ion and thus, the steric conditions around the exchange site might be improved. (M.N.)

  14. Low temperature solution synthesis of zinc antimonide, manganese antimonide, and strontium ruthenate compounds

    Science.gov (United States)

    Noblitt, Jennifer Lenkner

    2011-12-01

    Increasing energy demands are fueling research in the area of renewable energy and energy storage. In particular, Li-ion batteries and superconducting wires are attractive choices for energy storage. Improving safety, simplifying manufacturing processes, and advancing technology to increase energy storage capacity is necessary to compete with current marketed energy storage devices. These advancements are accomplished through the study of new materials and new morphologies. Increasing dependence on and rising demand for portable electronic devices has continued to drive research in the area of Li-ion batteries. In order to compete with existing batteries and be applicable to future energy needs such as powering hybrid vehicles, the drawbacks of Li-ion batteries must be addressed including (i) low power density, (ii) safety, and (iii) high manufacturing costs. These drawbacks can be addressed through new materials and morphologies for the anode, cathode, and electrolyte. New intermetallic anode materials such as ZnSb, MnSb, and Mn2Sb are attractive candidates to replace graphite, the current industry standard anode material, because they are safer while maintaining comparable theoretical capacity. Electrodeposition is an inexpensive method that could be used for the synthesis of these electrode materials. Direct electrodeposition allows for excellent electrical contact to the current collector without the use of a binder. To successfully electrodeposit zinc and manganese antimonides, metal precursors with excellent solubility in water were needed. To promote solubility, particularly for the antimony precursor, coordinating ligands were added to the deposition bath solutions. This work shows that the choice of coordinating ligand and metal-ligand speciation can alter both the electrochemistry and the film composition. This work focuses on the search for appropriate coordinating ligands, solution pH, and bath temperatures so that high quality films of ZnSb, MnSb, and

  15. Experimental Investigation of Zinc Antimonide Thin Film Thermoelectric Element over Wide Range of Operating Conditions

    DEFF Research Database (Denmark)

    Mirhosseini, Mojtaba; Rezania, Alireza; Blichfeld, Anders B.

    2017-01-01

    flows in plane with the thin film. At first, the effect of applying different temperatures at the hot side of the specimen is investigated to reach steady state in an open circuit analysis. Then, the study focuses on performance and stability analysis of the thermoelectric element operating under......Zinc antimonide compounds are among the most efficient thermoelectric (TE) materials with exceptional low thermal conductivity at moderate temperatures up to 350 °C. This study aims to evaluate the performance of a zinc antimonide thin film TE deposited on an insulating substrate, while the heat...

  16. Indium antimonide nanowires arrays for promising thermoelectric converters

    Directory of Open Access Journals (Sweden)

    Gorokh G. G.

    2015-02-01

    Full Text Available The authors have theoretically substantiated the possibility to create promising thermoelectric converters based on quantum wires. The calculations have shown that the use of quantum wires with lateral dimensions smaller than quantum confinement values and high concentration and mobility of electrons, can lead to a substantial cooling of one of the contacts up to tens of degrees and to the heating of the other. The technological methods of manufacturing of indium antimonide nanowires arrays with high aspect ratio of the nanowire diameters to their length in the modified nanoporous anodic alumina matrixes were developed and tested. The microstructure and composition of the formed nanostructures were investigated. The electron microscopy allowed establishing that within each pore nanowires are formed with diameters of 35 nm and a length of 35 microns (equal to the matrix thickness. The electron probe x-ray microanalysis has shown that the atomic ratio of indium and antimony in the semiconductor nanostructures amounted to 38,26% and 61,74%, respectively. The current-voltage measurement between the upper and lower contacts of Cu/InSb/Cu structure (1 mm2 has shown that at 2.82 V negative voltage at the emitter contact, current density is 129,8 A/cм2, and the collector contact is heated up to 75 degrees during 150 sec. Thus, the experimental results confirmed the theoretical findings that the quantum wire systems can be used to create thermoelectric devices, which can be widely applied in electronics, in particular, for cooling integrated circuits (processors, thermal controlling of the electrical circuits by changing voltage value.

  17. Effect of Thermal Cycling on Zinc Antimonide Thin Film Thermoelectric Characteristics

    DEFF Research Database (Denmark)

    Mirhosseini, M.; Rezania, A.; Rosendahl, L.

    2017-01-01

    In this study, performance and stability of zinc antimonide thin film thermoelectric sample is analyzed under transient thermal conditions. The thermoelectric materials are deposited on glass based substrate where the heat flow is parallel with the thermoelectric element length. The specimen...

  18. X-Ray Characterization of Quaternary Antimonide Materials for Mid-IR Lasers

    National Research Council Canada - National Science Library

    Lester, Luke

    2001-01-01

    .... This PL trace was generated using the equipment purchased with the grant money. We believe that new alloys constructed from AlInAsSb and GaInAsSb will be the backbone of future antimonide-based semiconductor lasers...

  19. Combustion synthesis: A new approach for preparation of thermoelectric zinc antimonide compounds

    Energy Technology Data Exchange (ETDEWEB)

    Rouessac, F., E-mail: Florence.Rouessac@univ-montp2.fr [Institut Charles Gerhardt Montpellier, UMR 5253 CNRS-UM2-ENSCM-UM1, C2M Universite Montpellier 2, CC 1504 Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France); Ayral, R.-M. [Institut Charles Gerhardt Montpellier, UMR 5253 CNRS-UM2-ENSCM-UM1, C2M Universite Montpellier 2, CC 1504 Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer Reliable preparation method of thermoelectric materials. Black-Right-Pointing-Pointer Formation of zinc antimonide by the combustion synthesis method is investigated. Black-Right-Pointing-Pointer XRD and Raman spectroscopy as a function of temperature. Black-Right-Pointing-Pointer SHS: a new way for synthesizing thermoelectric materials. - Abstract: Due to the interesting properties of Zn{sub 4}Sb{sub 3} thermoelectric material, a reliable preparation method of this material is required. In this study, the formation of zinc antimonides by the combustion synthesis method is investigated and subjected to characterization using X-ray diffraction and Raman spectroscopy as a function of temperature. The results show that combustion synthesis can be a new way for synthesizing these thermoelectric materials.

  20. Elastic, thermal and high pressure structural properties of heavy rare earth antimonides

    International Nuclear Information System (INIS)

    Soni, P.; Pagare, G.; Sanyal, S.P.

    2009-01-01

    Pressure induced structural phase transition of two heavy rare earth antimonides (RESb; RE=Ho, Er) have been studied theoretically by using an inter-ionic potential theory. This method has been found quite satisfactory in the case of pnictides of rare earth and describes the crystal properties in the framework of rigid-ion modal. The long-range Coulomb interaction, short-range repulsive interaction and van der Waals (vdW) interactions are properly incorporated in this theory. These compounds exhibit first order crystallographic phase transition from their NaCl-type structure to CsCl-type structure at 27 GPa and 33.2 GPa, respectively. The bulk moduli of RESb compounds are compared with the experimental values of elastic constants. We have also calculated the Debye temperature by incorporating the elastic constants for both the rare earth antimonides. (author)

  1. Production and investigation of galvanomagnetic properties of indium antimonide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sukhanov, S; Allaberenov, O; Annaberdyev, R; Mukhametniyazova, A B; Tudzhanova, I N [AN Tadzhikskoj SSR, Khorog. Pamirskij Biologicheskij Inst.

    1978-01-01

    The method of thermal evaporation in vacuum from 1 to 3x10/sup 5/ Tor was used to obtain thin films of indium antimonide on dielectric and ferrite substrates. At dusting of films the substrates had the temperature about 570 K. The rate of film growth reached 1000 AxC/sup -1/. Based on the Hall measurements, the specific electrical conductivity, mobility and concentration of spare film carriers were determined. Their dependences on the temperature (77-400 K) and on the magnetic fields in the range of 0-6500 e were studied.

  2. Electrical resistivity, Hall coefficient and electronic mobility in indium antimonide at different magnetic fields and temperatures

    International Nuclear Information System (INIS)

    Jee, Madan; Prasad, Vijay; Singh, Amita

    1995-01-01

    The electrical resistivity, Hall coefficient and electronic mobility of n-type and p-type crystals of indium antimonide have been measured from 25 degC-100 degC temperature range. It has been found by this measurement that indium antimonide is a compound semiconductor with a high mobility 10 6 cm 2 /V.S. The Hall coefficient R H was measured as a function of magnetic field strength H for a number of samples of both p and n-type using fields up to 12 kilo gauss. The Hall coefficient R h decreases with increasing magnetic fields as well as with increase in temperature of the sample. The electric field is more effective on samples with high mobilities and consequently the deviations from linearity are manifested at comparatively low values of the electric field. The measurement of R H in weak and strong magnetic fields makes it possible to determine the separate concentration of heavy and light holes. Measured values of Hall coefficient and electrical resistivity show that there is a little variation of ρ and R h with temperatures as well as with magnetic fields. (author). 12 refs., 5 tabs

  3. Recombination Parameters for Antimonide-Based Semiconductors using RF Photoreflection Techniques

    International Nuclear Information System (INIS)

    Kumar, R.J.; Borrego, J.M.; Dutta, P.S.; Gutmann, R.J.; Wang, C.A.; Martinelli, R.U.; Nichols, G.

    2002-01-01

    RF photoreflection measurements and PC-1D simulations have been used to evaluate bulk and surface recombination parameters in antimonide-based materials. PC-1D is used to simulate the photoconductivity response of antimonide-based substrates and doubly-capped epitaxial layers and also to determine how to extract the recombination parameters using experimental results. Excellent agreement has been obtained with a first-order model and test structure simulation when Shockley-Reed-Hall (SRH) recombination is the bulk recombination process. When radiative, Auger and surface recombination are included, the simulation results show good agreement with the model. RF photoreflection measurements and simulations using PC-1D are compatible with a radiative recombination coefficient (B) of approximately 5 x 10 -11 cm 3 /s, Auger coefficient (C) ∼ 1.0 x 10 -28 cm 6 /s and surface recombination velocity (SRV) ∼ 600 cm/s for 0.50-0.55 eV doubly-capped InGaAsSb material with GaSb capping layers using the experimentally determined active layer doping of 2 x 10 17 cm -3 . Photon recycling, neglected in the analysis and simulations presented, will affect the extracted recombination parameters to some extent

  4. Concerted Electrodeposition and Alloying of Antimony on Indium Electrodes for Selective Formation of Crystalline Indium Antimonide.

    Science.gov (United States)

    Fahrenkrug, Eli; Rafson, Jessica; Lancaster, Mitchell; Maldonado, Stephen

    2017-09-19

    The direct preparation of crystalline indium antimonide (InSb) by the electrodeposition of antimony (Sb) onto indium (In) working electrodes has been demonstrated. When Sb is electrodeposited from dilute aqueous electrolytes containing dissolved Sb 2 O 3 , an alloying reaction is possible between Sb and In if any surface oxide films are first thoroughly removed from the electrode. The presented Raman spectra detail the interplay between the formation of crystalline InSb and the accumulation of Sb as either amorphous or crystalline aggregates on the electrode surface as a function of time, temperature, potential, and electrolyte composition. Electron and optical microscopies confirm that under a range of conditions, the preparation of a uniform and phase-pure InSb film is possible. The cumulative results highlight this methodology as a simple yet potent strategy for the synthesis of intermetallic compounds of interest.

  5. Power Generation by Zinc Antimonide Thin Film under Various Load Resistances at its Critical Operating Temperature

    DEFF Research Database (Denmark)

    Mir Hosseini, Seyed Mojtaba; Rezaniakolaei, Alireza; Rosendahl, Lasse Aistrup

    slightly reduces during unload conditions, although it is expected that by eliminating load in each step, the initial amount of voltage exactly repeats. Similar behavior is observed for Seebeck coefficient distribution versus time of working particularly in lower load resistances. Based on variation...... thin films operating under different load resistances at around its critical operating temperature, 400 ᵒC. The thermoelement is subjected to constant hot side temperature and to room temperature at the cold junction in order to measure the thin film TEG’s sample performance. The nominal loads equal...... to 10, 15, 20, 25, 30, 35, 40, 45… 175, and also 200 Ohms were applied. The results show that the value of the Seebeck coefficient is 0.0002 [V/K] for the specimen, which is in agreement with quantities of other zinc antimonide bulks materials in literature. The results also show that the voltage...

  6. Far-Infrared Magneto-Optical Studies in Germanium and Indium-Antimonide at High Intensities

    Science.gov (United States)

    Leung, Michael

    Observations of nonlinear magneto-optical phenomena occurring in p-type Germanium and n-type Indium Antimonide are reported. These include multi-photon ionization of impurity states, and a new observation, the magneto-photon ionization of impurity states, and a new observation, the magneto-photon drag effect. A novel source of far-infrared radiation has been used. This source uses a pulsed CO(,2) LASER to optically pump a super-radiant cell, generating light with intensities up to 100 KW/cm('2) and wavelengths from 66 (mu)m to 496 (mu)m in a pulse of 150 nanoseconds duration. The Germanium samples were doped with Gallium, which is a shallow acceptor with an ionization potential of 11 meV. At liquid Helium temperature virtually all charge carriers are bound to acceptor sites. However, the high intensity radiation unexpectedly ionizes the acceptors. This is demonstrated through measurements of photoconductivity, transmission and the photo-Hall Effect. This observation is unexpected because the photon energy is one-fourth the ionization potential. Rate equations describing sequential multiphoton excitations are in agreement with the experimental results. The intermediate states are postulated to be acceptor exciton band states. Studies of the photoexcited mobility at 496 (mu)m suggest that at non-saturating levels of photoexcitation, the primary scattering mechanism of hot holes in Germanium is by neutral impurities. A new magneto-optical effect, the magneto-photon drag effect, has been studied in both Germanium and Indium Antimonide. This is simply the absorption of momentum by free carriers, from an incident photon field. It has been found that the mechanism for this effect is different in the two materials. In Germanium, the effect occurs when carriers make optical transitions from the heavy hole band to the light hole band. Thus, the magneto-optical behavior depends heavily upon the band structure. On the other hand, a modified Drude model (independent electron

  7. Role of three-body forces in lattice dynamics of neodymium antimonide

    International Nuclear Information System (INIS)

    Gupta, H.N.; Kanti Chandra

    1979-01-01

    Recently the experimental phonon-dispersion curves of neodymium antimonide (NdSb) have been reported by Wakabayashi and Furrer (1976). These results have been analysed using an extended three-body force shell model (ESTM) in its nearest-neighbour version which provides a very good agreement for acoustic- and a reasonably good agreement for optical-branches of dispersion curves. This shows clearly the effect of three-body forces in this solid. The lack in degree of agreement in the optical branches may be ascribed to the presence of (i) zero Lyddane-Sachs-Teller (LST) splitting of zone-centre optical vibration frequencies (ωsub(Lo) and ωsub(To)) (ii) some anomalous wiggles in those branches. While the former is explained by setting Lundquist's effective charge parameter (esub(L)) equal to zero in the theory of ESTM, the later is expected to be explained satisfactorily by including free-electron screening effects in the theoretical framework of ESTM. (auth.)

  8. Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.; Dahiya, V.; Cavallo, F. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Myers, S. [SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States); Krishna, S., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States)

    2016-02-29

    We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

  9. Filled skutterudite antimonides: Validation of the electron-crystal phonon-glass approach to new thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Mandrus, D; Sales, B C; Keppens, V [and others

    1997-07-01

    After a brief review of the transport and thermoelectric properties of filled skutterudite antimonides, the authors present resonant ultrasound, specific heat, and inelastic neutron scattering results that establish the existence of two low-energy vibrational modes in the filled skutterudite LaFe{sub 3}CoSb{sub 12}. It is likely that at least one of these modes represents the localized, incoherent vibrations of the La ion in an oversized atomic cage. These results support the usefulness of weakly bound, rattling ions for the improvement of thermoelectric performance.

  10. Polarized-neutron-scattering study of the spin-wave excitations in the 3-k ordered phase of uranium antimonide.

    Science.gov (United States)

    Magnani, N; Caciuffo, R; Lander, G H; Hiess, A; Regnault, L-P

    2010-03-24

    The anisotropy of magnetic fluctuations propagating along the [1 1 0] direction in the ordered phase of uranium antimonide has been studied using polarized inelastic neutron scattering. The observed polarization behavior of the spin waves is a natural consequence of the longitudinal 3-k magnetic structure; together with recent results on the 3-k-transverse uranium dioxide, these findings establish this technique as an important tool to study complex magnetic arrangements. Selected details of the magnon excitation spectra of USb have also been reinvestigated, indicating the need to revise the currently accepted theoretical picture for this material.

  11. Synthesis and characterisation of (poly-)antimonides and N-doped ZnO

    International Nuclear Information System (INIS)

    Greiwe, Magnus Josef Benedikt

    2014-01-01

    This thesis focused on the investigation of novel and known materials in the binary system T x Sb y (T = transition metal) and in the ternary system M x T y Sb z (M = Hf, Zr). The compounds were tested as anode materials for lithium-ion-batteries. In addition, the electronic conductivity and the magnetic behavior at low temperatures were tested. Main focus of this work was on the bonding situation in the antimony networks. To compare the results of the characterization of known or novel metallic/covalent compounds, all materials were synthesized and characterized either by solid state synthesis in a muffle furnace or by arc melting. In the ternary system M x T y Sb z (M = Hf, Zr; T = Cu, Ni, Pd), all compounds show covalent as well as metallic bonding character. Phase pure Zr 3 TSb 7 (T = Ni, Pd) and Zr 2 TSb 3 (T = Cu, Pd), were tested as potential anode materials for lithium-ion batteries. During electrochemical cycling these ternary compounds invariably convert to Li 3 Sb and the respective transition metals. Magnetic measurements of these materials show typical behaviour of intermetallic compounds. In a ZFC-FC-measurement of Zr 3 NiSb 7 a superconductive phase with 2 vol% superconducting material at T c = 10.9 K could be detected. The low volume superconductivity indicates that a side phase is responsible for this behaviour. Ternary Hf 10 NiSb 18 , Zr 5 NiSb 9 and Zr 4 CuSb 7 were also synthesized by systematic variation of the synthesis conditions. The crystal structures were solved and showed a similar structure to the Hf 5 Sb 9 structure type. In the case of Zr 4 CuSb 9 , phase purity was detected by Xray powder diffraction and the physical properties were measured. Due to ex-situ X-ray powder diffraction it was shown that the compound is disintegrating during lithiation and is re-formed during delithiation up to the 20 th cycle. M x Sb y (M = Hf, Zr) as representatives of binary antimonides were synthesized. Through Fe and/or Ni doping superconducting

  12. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Science.gov (United States)

    Jadhav, Vidya

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0> orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 1017 cm-3 were irradiated at 100 MeV Fe7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 1010-1 × 1014 ions cm-2. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet-visible-NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 1013, 5 × 1013 and 1 × 1014 ions cm-2, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 1013 ion cm-2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E1, E1 + Δ and E2 band gaps in all irradiated samples.

  13. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    International Nuclear Information System (INIS)

    Jadhav, Vidya

    2015-01-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10 17 cm −3 were irradiated at 100 MeV Fe 7+ ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10 10 –1 × 10 14 ions cm −2 . The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10 13 , 5 × 10 13 and 1 × 10 14 ions cm −2 , we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10 13 ion cm −2 was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E 1 , E 1 + Δ and E 2 band gaps in all irradiated samples

  14. Spin-orbit coupling effects in indium antimonide quantum well structures

    Science.gov (United States)

    Dedigama, Aruna Ruwan

    Indium antimonide (InSb) is a narrow band gap material which has the smallest electron effective mass (0.014m0) and the largest electron Lande g-facture (-51) of all the III-V semiconductors. Spin-orbit effects of III-V semiconductor heterostructures arise from two different inversion asymmetries namely bulk inversion asymmetry (BIA) and structural inversion asymmetry (SIA). BIA is due to the zinc-blende nature of this material which leads to the Dresselhaus spin splitting consisting of both linear and cubic in-plane wave vector terms. As its name implies SIA arises due to the asymmetry of the quantum well structure, this leads to the Rashba spin splitting term which is linear in wave vector. Although InSb has theoretically predicted large Dresselhaus (760 eVA3) and Rashba (523 eA 2) coefficients there has been relatively little experimental investigation of spin-orbit coefficients. Spin-orbit coefficients can be extracted from the beating patterns of Shubnikov--de Haas oscillations (SdH), for material like InSb it is hard to use this method due to the existence of large electron Lande g-facture. Therefore it is essential to use a low field magnetotransport technique such as weak antilocalization to extract spin-orbit parameters for InSb. The main focus of this thesis is to experimentally determine the spin-orbit parameters for both symmetrically and asymmetrically doped InSb/InxAl 1-xSb heterostructures. During this study attempts have been made to tune the Rashba spin-orbit coupling coefficient by using a back gate to change the carrier density of the samples. Dominant phase breaking mechanisms for InSb/InxAl1-xSb heterostructures have been identified by analyzing the temperature dependence of the phase breaking field from weak antilocalization measurements. Finally the strong spin-orbit effects on InSb/InxAl1-xSb heterostructures have been demonstrated with ballistic spin focusing devices.

  15. Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide

    Energy Technology Data Exchange (ETDEWEB)

    Jadhav, Vidya, E-mail: vj1510@yahoo.com

    2015-09-01

    Surface modifications caused by a swift heavy ion irradiation on crystalline p-type gallium antimonide crystal have been reported. Single crystal, 1 0 0〉 orientations and ∼500 μm thick p-type GaSb samples with carrier concentration of 3.30 × 10{sup 17} cm{sup −3} were irradiated at 100 MeV Fe{sup 7+} ions. We have used 15UD Pelletron facilities at IUAC with varying fluences of 5 × 10{sup 10}–1 × 10{sup 14} ions cm{sup −2}. The effects of irradiation on these samples have been investigated using, spectroscopic ellipsometry, atomic force microscopy and ultraviolet–visible–NIR spectroscopy techniques. Ellipsometry parameters, psi (Ψ) and delta (Δ) for the unirradiated sample and samples irradiated with different fluences were recorded. The data were fit to a three phase model to determine the refractive index and extinction coefficient. The refractive index and extinction coefficient for various fluences in ultraviolet, visible, and infrared, regimes were evaluated. Atomic force microscopy has been used to study these surface modifications. In order to have more statistical information about the surface, we have plotted the height structure histogram for all the samples. For unirradiated sample, we observed the Gaussian fitting. This result indicates the more ordered height structure symmetry. Whereas for the sample irradiated with the fluence of 1 × 10{sup 13}, 5 × 10{sup 13} and 1 × 10{sup 14} ions cm{sup −2}, we observed the scattered data. The width of the histogram for samples irradiated up to the fluence of 1 × 10{sup 13} ion cm{sup −2} was found to be almost same however it decreased at higher fluence. UV reflectance spectra of the sample irradiated with increasing fluences exhibit three peaks at 292, 500 and 617 nm represent the high energy GaSb; E{sub 1}, E{sub 1} + Δ and E{sub 2} band gaps in all irradiated samples.

  16. The crystal structure of a new ternary antimonide: TmCu4-xSb2 (x 1.065)

    International Nuclear Information System (INIS)

    Fedyna, L.O.; Bodak, O.I.; Fedorchuk, A.O.; Tokaychuk, Ya.O.

    2005-01-01

    The crystal structure of the new ternary compound TmCu 4-x Sb 2 (x 1.065) was determined by direct methods from X-ray powder data (diffractometer DRON-3M, Cu Kα-radiation). It crystallizes with the orthorhombic structure type ErFe 4 Ge 2 (low-temperature modification) and is the first representative of this structure type among known antimonides: space group Pnnm, Pearson code oP14-2.13, a = 7.00565(6) A, b = 7.83582(6) A, c = 4.25051(3) A, Z = 2. Investigated structure is an orthorhombically deformed derivative of the ZrFe 4 Si 2 structure type

  17. Technology to Establish a Factory for High QE Alkali Antimonide Photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Schultheiss, Thomas [Advanced Energy Systems, Inc., Medford, NY (United States)

    2015-11-16

    capable, low emittance, visible-light sensitive photocathodes to the myriad of source systems in use and under development. Successful adoption of photocathodes requires strict adherence to proper fabrication, operation, and maintenance methodologies, necessitating specialized knowledge and skills. Key issues include the choice of photoemitter material, development of a more streamlined growth process to minimize human operator uncertainties, accommodation of varying photoemitter substrate materials and geometries, efficient transport and insertion mechanisms preserving the photo-yield, and properly conveyed photoemitter operational and maintenance methodologies. AES, in collaboration with Cornell University in a Phase I STTR, developed an on-demand industrialized growth and centralized delivery system for high-brightness photocathodes focused upon the alkali antimonide photoemitters. To the end user, future photoemitter sourcing will become as simple as other readily available consumables, rather than a research project requiring large investments in time and personnel.

  18. Structure and physical properties of ternary uranium transition-metal antimonides U3MSb5 (M = Zr, Hf, Nb)

    International Nuclear Information System (INIS)

    Tkachuk, Andriy V.; Muirhead, Craig P.T.; Mar, Arthur

    2006-01-01

    The ternary uranium transition-metal antimonides U 3 MSb 5 (M = Zr, Hf, Nb) were prepared by arc-melting reactions followed by annealing at 800 deg. C, or by use of a Sn flux. These compounds extend the previously known series U 3 MSb 5 (M = Ti, V, Cr, Mn) and RE 3 MSb 5 (RE = La, Ce, Pr, Nd, Sm; M = Ti, Zr, Hf, Nb). The crystal structures of U 3 MSb 5 were determined by single-crystal X-ray diffraction data (Pearson symbol hP18, hexagonal, space group P6 3 /mcm, Z = 2; U 3 ZrSb 5 , a = 9.2223(3) A, c = 6.1690(2) A; U 3 HfSb 5 , a = 9.2084(4) A, c = 6.1629(3) A; U 3 NbSb 5 , a = 9.1378(4) A, c 6.0909(6) A). U 3 TaSb 5 has also been identified in microcrystalline form (a = 9.233(3) A, c = 6.142(3) A). Four-probe electrical resistivity measurements on single crystals and dc magnetic susceptibility measurements on powders indicated prominent transitions that are attributed to ferromagnetic ordering. The Curie temperatures, T C , located from ac magnetic susceptibility curves, are 135 K for U 3 ZrSb 5 , 141 K for U 3 HfSb 5 , and 107 K for U 3 NbSb 5

  19. Carbon nanofibers with highly dispersed tin and tin antimonide nanoparticles: Preparation via electrospinning and application as the anode materials for lithium-ion batteries

    Science.gov (United States)

    Li, Zhi; Zhang, Jiwei; Shu, Jie; Chen, Jianping; Gong, Chunhong; Guo, Jianhui; Yu, Laigui; Zhang, Jingwei

    2018-03-01

    One-dimensional carbon nanofibers with highly dispersed tin (Sn) and tin antimonide (SnSb) nanoparticles are prepared by electrospinning in the presence of antimony-doped tin oxide (denoted as ATO) wet gel as the precursor. The effect of ATO dosage on the microstructure and electrochemical properties of the as-fabricated Sn-SnSb/C composite nanofibers is investigated. Results indicate that ATO wet gel as the precursor can effectively improve the dispersion of Sn nanoparticles in carbon fiber and prevent them from segregation during the electrospinning and subsequent calcination processes. The as-prepared Sn-SnSb/C nanofibers as the anode materials for lithium-ion batteries exhibit high reversible capacity and stable cycle performance. Particularly, the electrode made from Sn-SnSb/C composite nanofibers obtained with 0.9 g of ATO gel has a high specific capacity of 779 mAh·g-1 and 378 mAh·g-1 at the current density of 50 mA·g-1 and 5 A·g-1, respectively, and it exhibits a capacity retention of 97% after 1200 cycles under the current density of 1 A·g-1. This is because the carbon nanofibers can form a continuous conductive network to buffer the volume change of the electrodes while Sn and Sn-SnSb nanoparticles uniformly distributed in the carbon nanofibers are free of segregation, thereby contributing to electrochemical performances of the electrodes.

  20. Artificial epitaxy of indium antimonide

    International Nuclear Information System (INIS)

    Ershov, V.I.; Givargizov, E.I.

    1987-01-01

    The results of the experiments on recrystallization of thin InSb films deposited on oxidized silicon by flash evaporation with ionized beams are given. Artificial microreliefs (topographic and thermal ones) were used for controlling the growth process. An orientation mechanism of the growing film by the microrelief is discussed. The experiments on preparation of regular single-crystal islands are described

  1. Synthesis and characterisation of (poly-)antimonides and N-doped ZnO; Synthese und Charakterisierung von (Poly-)antimoniden und die Darstellung von N-dotiertem ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Greiwe, Magnus Josef Benedikt

    2014-06-16

    }Sb{sub y} (M = Hf, Zr) as representatives of binary antimonides were synthesized. Through Fe and/or Ni doping superconducting Phases have been found. Furthermore binary chromium-antimonides with partial Fe or Ni substitution were prepared. Cr{sub 2}Ni{sub 0,3}Sb{sub 3,7} was tested as potential anodic material and a capacity of 98% (520 mAh.g{sup -1}) of the theoretical capacity in the 2{sup nd} cycle was measured. All compounds indicated that antimonies with a covalent bonding character are more stable against lithium intercalation than the intermetallic ones. New compounds in the quaternary system Cu-Hg-Sb-X (X = Br, I) were obtained by using the reaction conditions for the earlier (lighter) elements of the V. main group (P, As). In the new structure [Hg{sub 3}Sb{sub 2}]{sub 4}[CuX{sub 3}]{sub 4}X{sub 2} (X = Br, I) X{sub 2} a barbell of the halide is present. This structure is the first example in the system Hf-Sb-X which shows two different interpenetrated networks: [Hg{sub 3}Sb{sub 2}]{sup 2+} and [CuX{sub 3}]{sup 2-}. For the first time it has been possible to calculate the Br-Br bond length by X-ray single crystal measurements at room temperature. Another topic of this work was to test the solution combustion method (SCM) in order to gain ZnO (Wurtzit structure) with nitrogen defects at the oxygen position. Standard synthesis methods for oxonitrides require high temperature or high pressure procedures. A softer synthesis method is the solution combustion method published by Mapa and Gopinath. The results of various experiments in cooperation with Stefan Soellradl yielded no intercalation of nitrogen defects into ZnO but a new phase was found which is identified as isocyanuric acid after reprocessing.

  2. Alkaline earth filled nickel skutterudite antimonide thermoelectrics

    Science.gov (United States)

    Singh, David Joseph

    2013-07-16

    A thermoelectric material including a body centered cubic filled skutterudite having the formula A.sub.xFe.sub.yNi.sub.zSb.sub.12, where A is an alkaline earth element, x is no more than approximately 1.0, and the sum of y and z is approximately equal to 4.0. The alkaline earth element includes guest atoms selected from the group consisting of Be, Mb, Ca, Sr, Ba, Ra and combinations thereof. The filled skutterudite is shown to have properties suitable for a wide variety of thermoelectric applications.

  3. Impact ionization by electric fields in intrinsic indium-antimonide

    International Nuclear Information System (INIS)

    Bruhns, H.; Huebner, K.

    1977-01-01

    The impact-ionization rate in InSb at 300 K between 200 and 500 V/cm is found to be g(E) = 2 x 10 9 exp(-10 3 /E)s -1 with E being the electric field (V/cm). We use current-voltage characteristics measured by A.C. Prior in 1957. In evaluating the impact-ionization rate we take into account Auger and linear recombination, surface generation, z-pinch compression, and doping of the sample. We also discuss the effects of ohmic heating and change in electron temperature. The rates evaluated from four independent measurements done by Prior agree reasonably well. (orig.) [de

  4. Minority Carrier Lifetime Studies of Narrow Bandgap Antimonide Superlattices

    Science.gov (United States)

    Hoglund, Linda; Ting, David Z.; Khoshakhlagh, Arezou; Soibel, Alexander; Hill, Cory J.; Fisher, Anita; Keo, Sam; Gunapala, Sarath D.

    2014-01-01

    In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.

  5. Cold electron beams from cryocooled, alkali antimonide photocathodes

    Directory of Open Access Journals (Sweden)

    L. Cultrera

    2015-11-01

    Full Text Available In this paper we report on the generation of cold electron beams using a Cs_{3}Sb photocathode grown by codeposition of Sb and Cs. By cooling the photocathode to 90 K we demonstrate a significant reduction in the mean transverse energy validating the long-standing speculation that the lattice temperature contributes to limiting the mean transverse energy or intrinsic emittance near the photoemission threshold, opening new frontiers in generating ultrabright beams. At 90 K, we achieve a record low intrinsic emittance of 0.2  μm (rms per mm of laser spot diameter from an ultrafast (subpicosecond photocathode with quantum efficiency greater than 7×10^{−5} using a visible laser wavelength of 690 nm.

  6. High pressure behaviour of heavy rare earth antimonides

    International Nuclear Information System (INIS)

    Pagare, Gitanjali; Soni, Pooja; Srivastava, Vipul; Sanyal, S.P.

    2008-01-01

    We have investigated theoretically the high-pressure structural phase transition and cohesive properties of two heavy rare earth mono anyimonides (LnSb; Ln = Dy and Lu) by using two body interionic potential with necessary modifications to include the effect of Coulomb screening by the delocalized 4f electrons of the RE ion. The peculiar properties of these compounds have been interpreted in terms of the hybridization of f electrons with the conduction band. The calculated compression curves and the values of high-pressure behaviour have been discussed and compared with the experimental results. These compounds exhibits first order crystallographic phase transition from their NaCl (B 1 ) phase to CsCl (B 2 ) phase at 23.6 GPa and 25.4 GPa respectively. At phase transition the % volume collapse for both the compounds are little higher than the measured ones. The NaCl phase possesses lower energy than CsCl phase and stable at ambient pressure. The bulk moduli of LnSb compounds are obtained from the P-V curve fitted by the Birch equation of state. We also calculated the Ln-Ln distance as a function of pressure. (author)

  7. Lifetime of charge carriers in intrinsic indium antimonide

    International Nuclear Information System (INIS)

    Bruhns, H.; Kruse, H.

    1980-01-01

    The lifetime of additional photoinjected electron-hole pairs in intrinsic InSb at 291 K is investigated by measuring the photoconductive (PC) decay. Apart from studying the usual PC-decay an arangement is used with superimposed magnetic field transverse to the electric field. Depending on the direction of the magnetic field the photoinjected plasma is either driven into the sample's bulk or travels parallel to the illuminated surface. The Auger-lifetime is evaluated from the measurements by a numerical magnetohydrodynamical simulation taking into account surface recombination as well as the Suhl profile of the intrinsic plasma. A lifetime of tau = (57+-3) ns is found which is independent of the magnetic field up to 2.3 T. (author)

  8. Czochralski growth of gallium indium antimonide alloy crystals

    Energy Technology Data Exchange (ETDEWEB)

    Tsaur, S.C.

    1998-02-01

    Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystal seeds up to about 2 to 5 mole% InSb were grown from seeds of 1 to 2 mole% InSb, which were grown from essentially pure GaSb seeds of the [111] direction. Single crystals were grown with InSb rising from about 2 to 6 mole% at the seed ends to about 14 to 23 mole% InSb at the finish ends. A floating-crucible technique that had been effective in reducing segregation in doped crystals, was used to reduce segregation in Czochralski growth of alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb. Crystals close to the targeted composition of 1 mole% InSb were grown. However, difficulties were encountered in reaching higher targeted InSb concentrations. Crystals about 2 mole% were grown when 4 mole% was targeted. It was observed that mixing occurred between the melts rendering the compositions of the melts; and, hence, the resultant crystal unpredictable. The higher density of the growth melt than that of the replenishing melt could have triggered thermosolutal convection to cause such mixing. It was also observed that the floating crucible stuck to the outer crucible when the liquidus temperature of the replenishing melt was significantly higher than that of the growth melt. The homogeneous Ga{sub 1{minus}x}In{sub x}Sb single crystals were grown successfully by a pressure-differential technique. By separating a quartz tube into an upper chamber for crystal growth and a lower chamber for replenishing. The melts were connected by a capillary tube to suppress mixing between them. A constant pressure differential was maintained between the chambers to keep the growth melt up in the growth chamber. The method was first tested with a low temperature alloy Bi{sub 1{minus}x}Sb{sub x}. Single crystals of Ga{sub 1{minus}x}In{sub x}Sb were grown with uniform compositions up to nearly 5 mole% InSb.

  9. Growth and characterization of indium antimonide and gallium ...

    Indian Academy of Sciences (India)

    Unknown

    ous impurity distribution and low dislocation density to ... The incorporation of stress in the lattice due to differential thermal ... fabricated. It was then integrated into a home-made ..... During the course of this work some of the main problems.

  10. Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy

    Science.gov (United States)

    2016-02-04

    PATHUMWAN BANGKOK, 10330 TH 8. PERFORMING ORGANIZATION REPORT NUMBER N/A 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS...their quantum nanostructure, they could be operated at high temperature and are more stable with temperature change. Sb based QDs can be type II...stable at either 450°C or 300°C , As shutter is closed until the background pressure reaches 10-9 Torr. Sb cracker cell working at 700°C for stable

  11. Indium antimonide quantum well structures for electronic device applications

    Science.gov (United States)

    Edirisooriya, Madhavie

    The electron effective mass is smaller in InSb than in any other III-V semiconductor. Since the electron mobility depends inversely on the effective mass, InSb-based devices are attractive for field effect transistors, magnetic field sensors, ballistic transport devices, and other applications where the performance depends on a high mobility or a long mean free path. In addition, electrons in InSb have a large g-factor and strong spin orbit coupling, which makes them well suited for certain spin transport devices. The first n-channel InSb high electron mobility transistor (HEMT) was produced in 2005 with a power-delay product superior to HEMTs with a channel made from any other III-V semiconductor. The high electron mobility in the InSb quantum-well channel increases the switching speed and lowers the required supply voltage. This dissertation focuses on several materials challenges that can further increase the appeal of InSb quantum wells for transistors and other electronic device applications. First, the electron mobility in InSb quantum wells, which is the highest for any semiconductor quantum well, can be further increased by reducing scattering by crystal defects. InSb-based heteroepitaxy is usually performed on semi-insulating GaAs (001) substrates due to the lack of a lattice matched semi-insulating substrate. The 14.6% mismatch between the lattice parameters of GaAs and InSb results in the formation of structural defects such as threading dislocations and microtwins which degrade the electrical and optical properties of InSb-based devices. Chapter 1 reviews the methods and procedures for growing InSb-based heterostructures by molecular beam epitaxy. Chapters 2 and 3 introduce techniques for minimizing the crystalline defects in InSb-based structures grown on GaAs substrates. Chapter 2 discusses a method of reducing threading dislocations by incorporating AlyIn1-ySb interlayers in an AlxIn1-xSb buffer layer and the reduction of microtwin defects by growth on GaAs substrates that are oriented 2° away from the [011] direction. Chapter 3 discusses designing InSb QW layer structures that are strain balanced. By applying these defect-reducing techniques, the electron mobility in InSb quantum wells at room temperature was significantly increased. For complementary logic technology, p-channel transistors with high mobility are equally as important as n-channel transistors. However, achieving a high hole mobility in III-V semiconductors is challenging. A controlled introduction of strain in the quantum-well material is an effective technique for enhancing the hole mobility beyond its value in bulk material. The strain reduces the hole effective mass by splitting the heavy hole and light hole valence bands. Chapter 4 discusses a successful attempt to realize p-type InSb quantum well structures. The biaxial strain applied via a relaxed metamorphic buffer resulted in a significantly higher room-temperature hole mobility and a record high low-temperature hole mobility. To demonstrate the usefulness of high mobility in a device structure, magnetoresistive devices were fabricated from remotely doped InSb QWs. Such devices have numerous practical applications such as position and speed sensors and as read heads in magnetic storage systems. In a magnetoresistive device composed of a series of shorted Hall bars, the magnetoresistance is proportional to the electron mobility squared for small magnetic fields. Hence, the high electron mobility in InSb QWs makes them highly preferable for geometrical magnetoresistors. Chapter 5 reports the fabrication and characterization of InSb quantum-well magnetoresistors. The excellent transport properties of the InSb QWs resulted in high room-temperature sensitivity to applied magnetic fields. Finally, Chapter 6 provides the conclusions obtained during this research effort, and makes suggestions for future work.

  12. Muon spin relaxation and rotation studies of the filled skutterudite alloys praseodymium osmium ruthenium antimonide and praseodymium lanthanum osmium antimonide

    Science.gov (United States)

    Shu, Lei

    Some filled skutterudite compounds have recently been found to exhibit very interesting properties. The first Pr-based heavy-fermion superconductor, PrOs4Sb12, is an intriguing material due to the unusual properties of both its normal and superconducting states. Comprehensive muon spin rotation and relaxation studies and magnetic susceptibility measurements, described in this dissertation, have been performed to investigate the microscopic properties of PrOs4Sb12 and its Ru and La doped alloys. The temperature dependence of penetration depth measured in the vortex state of PrOs4Sb12 using transverse-field muon spin rotation (TF-muSR) is weaker than those measured by radiofrequency measurements. A scenario based on two-band superconductivity in PrOs4Sb 12, is proposed to resolve this difference. TF-muSR experiments also suggest the suppression of superfluid density with Ru doping, probably due to impurity scattering. In addition, magnetic susceptibility data as well as analysis of the muSR data in PrOs4Sb12 reveal a nearly linear relation of mu+ Knight shift vs. magnetic susceptibility. This suggests that the muon charge does not affect the crystalline electric field splitting of Pr3+ near neighbors. Additional evidence comes from the fact that the superconducting transition temperature Tc measured from muSR is consistent with the bulk superconducting values. Zero-field muon spin relaxation (ZF-muSR) experiments have been carried out in the Pr(Os1-xRux) 4Sb12 and Pr1-yLayOs 4Sb12 alloy systems to investigate the time-reversal symmetry (TRS) breaking found in an earlier ZF-muSR study of the end compound PrOs 4Sb12. The results from measurements at KEK, Japan, suggest that Ru doping is considerably more efficient than La doping in suppressing TRS breaking superconducting in PrOs4Sb12. However, we think that the spontaneous local field that indicates TRS breaking detected by ZF-muSR may depend on sample quality if those fields are from inhomogeneity in the superconducting order parameter, since our ZF-muSR experiment detects nonzero spontaneous fields for Pr(Os0.9Ru0.1)4 Sb12 from measurement at ISIS, United Kingdom in different samples. Longitudinal-field muon spin relaxation experiments also have been carried out to elucidate the anomalous dynamic muon spin relaxation detected by ZF-muSR in those alloys. The dynamic muon relaxation found in the alloys appears to be due to 141Pr nuclear spin fluctuations, where the 141Pr moments are enhanced by hyperfine coupling to the Pr 3+ Van Vleck susceptibility.

  13. Copper Antimonide Nanowire Array Lithium Ion Anodes Stabilized by Electrolyte Additives.

    Science.gov (United States)

    Jackson, Everett D; Prieto, Amy L

    2016-11-09

    Nanowires of electrochemically active electrode materials for lithium ion batteries represent a unique system that allows for intensive investigations of surface phenomena. In particular, highly ordered nanowire arrays produced by electrodeposition into anodic aluminum oxide templates can lead to new insights into a material's electrochemical performance by providing a high-surface-area electrode with negligible volume expansion induced pulverization. Here we show that for the Li-Cu x Sb ternary system, stabilizing the surface chemistry is the most critical factor for promoting long electrode life. The resulting solid electrolyte interphase is analyzed using a mix of electron microscopy, X-ray photoelectron spectroscopy, and lithium ion battery half-cell testing to provide a better understanding of the importance of electrolyte composition on this multicomponent alloy anode material.

  14. Structural defect generation in indium antimonide single crystals during electro-erosion cutting

    International Nuclear Information System (INIS)

    Kravetskij, M.Yu.; Matsas, E.P.; Skorokhod, M.Ya.; Fomin, A.V.; Khromyak, K.Ya.

    1990-01-01

    Using X-ray topography structural defects generating during electro-erosion cutting of InSb single crystals are studied. It is shown that dislocations, are introduced into so cut dislocation-free ingot plates, nucleation centers being located on their surfaces. It is detected that foreign phase inclusions in InSb are efficient sources of dislocations during cutting

  15. Novel strongly correlated electron states in filled skutterudite lanthanide osmium antimonides

    International Nuclear Information System (INIS)

    Maple, M.B.; Frederick, N.A.; Ho, P.-C.; Yuhasz, W.M.; Sayles, T.A.; Butch, N.P.; Jeffries, J.R.; Taylor, B.J.

    2005-01-01

    Recent measurements on the filled skutterudite compounds Pr(Os 1-x Ru x ) 4 Sb 12 , NdOs 4 Sb 12 , and SmOs 4 Sb 12 are discussed. Pr(Os 1-x Ru x ) 4 Sb 12 displays superconductivity for all values of x with a minimum at x=0.6, and only the compounds with x 4 Sb 12 and the BCS superconductivity of PrRu 4 Sb 12 . NdOs 4 Sb 12 is a heavy fermion ferromagnet, with a sharp transition observed at 1.0K. SmOs 4 Sb 12 is also a heavy fermion material, and it may display weak ferromagnetic behavior below 2.6K

  16. Low-gravity homogenization and solidification of aluminum antimonide. [Apollo-Soyuz test project

    Science.gov (United States)

    Ang, C.-Y.; Lacy, L. L.

    1976-01-01

    The III-V semiconducting compound AlSb shows promise as a highly efficient solar cell material, but it has not been commercially exploited because of difficulties in compound synthesis. Liquid state homogenization and solidification of AlSb were carried out in the Apollo-Soyuz Test Project Experiment MA-044 in the hope that compositional homogeneity would be improved by negating the large density difference between the two constituents. Post-flight analysis and comparative characterization of the space-processed and ground-processed samples indicate that there are major homogeneity improvements in the low-gravity solidified material.

  17. Large negative magnetoresistance of a nearly Dirac material: Layered antimonide EuMnS b2

    Science.gov (United States)

    Yi, Changjiang; Yang, Shuai; Yang, Meng; Wang, Le; Matsushita, Yoshitaka; Miao, Shanshan; Jiao, Yuanyuan; Cheng, Jinguang; Li, Yongqing; Yamaura, Kazunari; Shi, Youguo; Luo, Jianlin

    2017-11-01

    Single crystals of EuMnS b2 were successfully grown and their structural and electronic properties were investigated systematically. The material crystallizes in an orthorhombic-layered structure (space group: Pnma, No. 62) comprising a periodic sequence of -MnSb/Eu/Sb/Eu/- layers (˜1 nm in thickness), and massless fermions are expected to emerge in the Sb layer, by analogy of the candidate Dirac materials EuMnB i2 and A Mn P n2 (A =Ca or Sr or Ba, P n =Sb or Bi). The magnetic and specific heat measurements of EuMnS b2 suggest an antiferromagnetic ordering of Eu moments near 20 K. A characteristic hump appears in the temperature-dependent electrical resistivity curve at ˜25 K . A spin-flop transition of Eu moments with an onset magnetic field of ˜15 kOe (at 2 K) was observed. Interestingly, EuMnS b2 shows a negative magnetoresistance (up to -95 % ) in contrast to the positive magnetoresistances observed for EuMnB i2 and A Mn P n2 (A =Ca or Sr or Ba, P n =Sb or Bi), providing a unique opportunity to study the correlation between electronic and magnetic properties in this class of materials.

  18. Quantum Transport in Indium Antimonide Nanowires : Investigating building blocks for Majorana devices

    NARCIS (Netherlands)

    Van Weperen, I.

    2014-01-01

    Recently ideas to engineer Majorana fermions in the solid state have been developed. These Majoranas, quasiparticles that are their own antiparticle, have received much attention, as they are expected to fulfill non-Abelian exchange statistics and could potentially function as fault-tolerant quantum

  19. Thermoelectric properties of cobalt–antimonide thin films prepared by radio frequency co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Aziz; Han, Seungwoo, E-mail: swhan@kimm.re.kr

    2015-07-31

    Co–Sb thin films with an Sb content in the range 65–76 at.%, were deposited on a thermally oxidized Si (100) substrate preheated at 200 °C using radio-frequency co-sputtering. Evaluation using scanning electron microscopy images and X-ray diffraction reveals that the films were polycrystalline, with a grain size in the range 100–250 nm. Energy-dispersive spectroscopy analysis indicates single-phase CoSb{sub 2} and CoSb{sub 3} films, as well as multiphase thin films with either CoSb{sub 2} or CoSb{sub 3} as the dominant phase. The electrical and thermoelectric properties were measured and found to be strongly dependent on the observed phases and the defect concentrations. The CoSb{sub 2} thin films were found to exhibit a significant n-type thermoelectric effect, which, coupled with the very low electrical resistivity, resulted in a larger power factor than that of the CoSb{sub 3} thin films. We find power factors of 0.73 mWm{sup −1} K{sup −2} and 0.67 mWm{sup −1} K{sup −2} for the CoSb{sub 2} and CoSb{sub 3} thin films, respectively. - Highlights: • Polycrystalline Co–Sb thin films were obtained by present deposition strategy. • CoSb{sub 2} and CoSb{sub 3} have semimetal and semiconductor characteristics respectively. • The Seebeck coefficient depends heavily on defect concentration and impurity phases. • Film properties in the second heating cycle were different from the first. • CoSb{sub 2} is found to possess significant n-type thermopower.

  20. InAs/InAsP composite channels for antimonide-based field-effect transistors

    International Nuclear Information System (INIS)

    Lin, H.-K.; Kadow, C.; Dahlstroem, M.; Bae, J.-U.; Rodwell, M.J.W.; Gossard, A.C.; Brar, B.; Sullivan, G.; Nagy, G.; Bergman, J.

    2004-01-01

    We report the growth and transport characteristics of stepped InAs/InAs 1-x P x quantum wells with AlSb barriers. Electron mobilities and carrier concentrations in these composite stepped quantum wells were studied as a function of growth temperature and phosphorus content. For InAs 1-x P x grown at 430 deg. C substrate temperature (nominal x=0.2), a high 22 500 cm 2 /V s electron mobility was observed, while 7100 cm 2 /V s mobility was observed in a single strained InAs 1-x P x quantum well layer. Heterostructure field-effect transistors fabricated using the composite quantum wells exhibited increased breakdown voltage and a 14:1 reduction in source-drain dc conduction when compared to a similar InAs-channel device

  1. Experimental Investigation of Zinc Antimonide Thin Films under Different Thermal Boundary Conditions

    DEFF Research Database (Denmark)

    Mir Hosseini, Seyed Mojtaba; Rosendahl, Lasse Aistrup; Rezaniakolaei, Alireza

    for all cases, showing that the electrical potential difference is increasing by temperature for all cases with the same slope. Also the value of Seebeck coefficient (α) is almost constant for all cases. The obtained value of α can compete with developed bulk TEG materials in literature. The thin film...... is able to operate in relatively high range of temperature with long working period without failure. Furthermore, effects of implementing thermal cycling on stability analysis of a TEG sample are considered. By testing the thermoelectric thin film specimen during a thermal cycling, behavior of the TEG...

  2. Faraday Rotation Studies of Indium Antimonide and CADMIUM(1-X) Manganese(x) Telluride

    Science.gov (United States)

    Jimenez Gonzalez, Hector J.

    Faraday rotation has been studied in two material systems: narrow-gap InSb and wide-gap Cd_ {1-x}Mn_{x}Te. The measurements were done in the infrared region using high magnetic fields up to 150 kG. The Faraday rotation of n-type InSb has been measured for wavelengths between 8.0 and 13.0 μm at 9 K, using magnetic fields up to 150 kG. Measurements were made on samples with nominal carrier concentrations of 1 times 10^{14 }, 6 times 10 ^{14}, 1 times 10^{15}, and 5 times 10^{15} cm^{-3}. The experimental results have been successfully analyzed in terms of intraband and interband transitions at the Gamma point in the Brillouin zone, using a quantum-mechanical treatment. In this approach, there are three contributions to the Faraday rotation: (a) interband, (b) plasma, and (c) spin contributions. The interband contribution is dominant in the low concentration samples where the plasma and spin contributions, which are due to the free carriers, are small. At high carrier concentrations the spin and plasma contributions are dominant. In the low-magnetic -field regime the interband and plasma contributions are linearly proportional to the magnetic field and become small. This makes the spin contribution the leading contribution to the Faraday rotation at low magnetic fields. The 4 -band k cdot p Pidgeon and Brown model was used to calculate the energy levels and the matrix elements for these transitions. Quantum oscillatory effects were observed at low magnetic field. Cyclotron resonance absorption was observed in all samples for wavelengths _sp{~}{>}16.0 mum. The Faraday rotation of Cd_{1 -x}Mn_{x}Te has been measured for x = 0 to 0.27 at 300 and 77 K for photon energies between 0.1 and 1.5 eV, corresponding to wavelengths of 12.0 and 0.8 mum, respectively. We have developed a multioscillator model for the Faraday rotation using an analytical expression for the refractive index that includes contributions from interband transitions at the Gamma, L, and X points of the Brillouin zone as well as the lattice contribution from optical phonons. The multioscillator model explains the measured behavior of the Verdet constant as a function of photon energy for all the above values of x at both temperatures. This model has also been applied successfully to Faraday rotation data for Cd_ {1-x}Mn_{x}Te and Zn_{1-x}Mn _{x}Te from previous studies. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253 -1690.).

  3. Ballistic magnetotransport and spin-orbit interaction in indium antimonide and indium arsenide quantum wells

    Science.gov (United States)

    Peters, John Archibald

    While charge transport in a two-dimensional electron system (2DES) is fairly well understood, many open experimental and theoretical questions related to the spin of electrons remain. The standard 2DES embedded in Alx Ga1-xAs/GaAs heterostructures is most likely not the optimal candidate for such investigations, since spin effects as well as spin-orbit interactions are small perturbations compared to other effects. This has brought InSb- and InAs-based material systems into focus due to the possibility of large spin-orbit interactions. By utilizing elastic scattering off a lithographic barrier, we investigate the consequence of spin on different electron trajectories observed in InSb and InAs quantum wells. We focus on the physical properties of spin-dependent reflection in a 2DES and we present experimental results demonstrating a method to create spin-polarized beams of ballistic electrons in the presence of a lateral potential barrier. Spatial separation of electron spins using cyclotron motion in a weak magnetic is also achieved via transverse magnetic focusing. We also explore electrostatic gating effects in InSb/InAlSb heterostructures and demonstrate the effective use of polymethylglutarimide (PMGI) as a gate dielectric for InSb. The dependence on temperature and on front gate voltage of mobility and density are also examined, revealing a strong dependence of mobility on density. As regards front gate action, there is saturation in the density once it reaches a limiting value. Further, we investigate antidot lattices patterned on InSb/InAlSb and InAs/AlGaSb heterostructures. At higher magnetic fields, ballistic commensurability features are displayed while at smaller magnetic fields localization and quantized oscillatory phenomena appear, with marked differences between InSb and InAs. Interesting localization behavior is exhibited in InSb, with the strength of the localization peak decreasing exponentially with temperature between 0.4 K and 50 K. InAs on the other hand show a strikingly modified antilocalization behavior, with small-period oscillations in magnetic field superposed. We also observe Altshuler-Aronov-Spivak oscillations in InSb and InAs antidot lattices and extract the phase and spin coherence lengths in InAs. Our experimental results are discussed in the light of localization and anti localization as probes of disorder and of spin dephasing mechanisms, modified by the artificial potential of the antidot lattice.

  4. Atomistic simulation studies of iron sulphide, platinum antimonide and platinum arsenide

    CSIR Research Space (South Africa)

    Ngoepe, PE

    2005-09-01

    Full Text Available The authors present the results of atomistic simulations using derived interatomic potentials for the pyrite-structured metal chalcogenides FeS2, PtSb2 and PtAs2. Structural and elastic constants were calculated and compared with experimental...

  5. Defect study of Zn-doped p-type gallium antimonide using positron lifetime spectroscopy

    International Nuclear Information System (INIS)

    Ling, C. C.; Fung, S.; Beling, C. D.; Huimin, Weng

    2001-01-01

    Defects in p-type Zn-doped liquid-encapsulated Czochralski--grown GaSb were studied by the positron lifetime technique. The lifetime measurements were performed on the as-grown sample at temperature varying from 15 K to 297 K. A positron trapping center having a characteristic lifetime of 317 ps was identified as the neutral V Ga -related defect. Its concentration in the as-grown sample was found to be in the range of 10 17 --10 18 cm -3 . At an annealing temperature of 300 o C, the V Ga -related defect began annealing out and a new defect capable of trapping positrons was formed. This newly formed defect, having a lifetime value of 379 ps, is attributed to a vacancy--Zn-defect complex. This defect started annealing out at a temperature of 580 o C. A positron shallow trap having binding energy and concentration of 75 meV and 10 18 cm -3 , respectively, was also observed in the as-grown sample. This shallow trap is attributed to positrons forming hydrogenlike Rydberg states with the ionized dopant acceptor Zn

  6. Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

    International Nuclear Information System (INIS)

    Ma, S K; Lui, M K; Ling, C C; Fung, S; Beling, C D; Li, K F; Cheah, K W; Gong, M; Hang, H S; Weng, H M

    2004-01-01

    Electron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). In addition to the 315 ps component reported in the previous studies, another defect with a lifetime of 280 ps was also identified in the present electron irradiated samples. The bulk lifetime of the GaSb material was found to be 258 ps. The V Ga,280ps and the V Ga,315ps defects were associated with two independent Ga vacancy related defects having different microstructures. The well known 777 meV PL signal (usually band A) was also observed in the electron irradiated undoped GaSb samples. The band A intensity decreases with increasing electron irradiation dosage and it disappears after the 300 deg. C annealing regardless of the irradiation dosage. The origin of the band A signal is also discussed

  7. Structural, morphological and Raman studies of pulse electrosynthesised indium antimonide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Chandel, Tarun; Rajaram, P. [School of Studies in Physics, Jiwaji University, Gwalior (MP), India-474011 (India)

    2015-08-28

    InSb films deposited on fluorine doped tin oxide (FTO) substrates by a pulse elctrodeposition technique. The deposition was carried out at an applied potential −1.3V versus Ag/AgCl electrode. Structural, morphological and optical studies were performed on the electrodeposited InSb. X-ray diffraction (XRD) studies show that the deposited InSb films are polycrystalline in nature having the zinc blend structure. The crystallite size (D), dislocation density (δ) and strain (ε) were calculated using XRD results. The EDAX analysis shows that chemical composition of In{sup 3+} and Sb{sup 3+} ions is close to the required stoichiometry. The surface morphology of the deposited films was examined using scanning electron microscopy (SEM). SEM studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. However, the crystallite size determined by the Scherrer method shows a size close to 30 nm. Surface morphology studies of the InSb films were also performed using atomic force microscopy (AFM). The average surface roughness as measured by AFM is around 40 nm. Hot probe studies show that all the electrodeposited thin films have n type conductivity and the thickness of the films is calculated using electrochemical formula.

  8. Improved Performance Characteristics For Indium Antimonide Photovoltaic Detector Arrays Using A FET-Switched Multiplexing Technique

    Science.gov (United States)

    Ma, Yung-Lung; Ma, Chialo

    1987-03-01

    In this paper An Acoustic Imaging Recognition System (AIRS) will be introduced which is installed on an Intelligent Robotic System and can recognize different type of Hand tools' by Dynamic pattern recognition. The dynamic pattern recognition is approached by look up table method in this case, the method can save a lot of calculation time and it is practicable. The Acoustic Imaging Recognition System (AIRS) is consist of four parts _ position control unit, pulse-echo signal processing unit, pattern recognition unit and main control unit. The position control of AIRS can rotate an angle of ±5 degree Horizental and Vertical seperately, the purpose of rotation is to find the maximum reflection intensity area, from the distance, angles and intensity of the target we can decide the characteristic of this target, of course all the decision is target, of course all the decision is processed by the main control unit. In Pulse-Echo Signal Process Unit, we utilize the correlation method, to overcome the limitation of short burst of ultrasonic, because the Correlation system can transmit large time bandwidth signals and obtain their resolution and increased intensity through pulse compression in the correlation receiver. The output of correlator is sampled and transfer into digital data by p law coding method, and this data together with delay time T, angle information eH, eV will be sent into main control unit for further analysis. The recognition process in this paper, we use dynamic look up table method, in this method at first we shall set up serval recognition pattern table and then the new pattern scanned by Transducer array will be devided into serval stages and compare with the sampling table. The comparison is implemented by dynamic programing and Markovian process. All the hardware control signals, such as optimum delay time for correlator receiver, horizental and vertical rotation angle for transducer plate, are controlled by the Main Control Unit, the Main Control Unit also handles the pattern recognition process. The distance from the target to the transducer plate is limitted by the power and beam angle of transducer elements, in this AIRS Models, we use a narrow beam transducer and it's input voltage is 50V p-p. A Robot equipped with AIRS can not only measure the distance from the target but also recognize a three dimensional image of target from the image lab of Robot memory. Indexitems, Accoustic System, Supersonic transducer, Dynamic programming, Look-up-table, Image process, pattern Recognition, Quad Tree, Quadappoach.

  9. Effect of Sb thickness on the performance of bialkali-antimonide photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Mamun, Md Abdullah A., E-mail: mmamu001@odu.edu; Elmustafa, Abdelmageed A. [Department of Mechanical and Aerospace Engineering, Old Dominion University, Norfolk, Virginia 23529 and The Applied Research Center, Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States); Hernandez-Garcia, Carlos; Mammei, Russell; Poelker, Matthew [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)

    2016-03-15

    The alkali species Cs and K were codeposited using an effusion source, onto relatively thick layers of Sb (50 nm to ∼7 μm) grown on GaAs and Ta substrates inside a vacuum chamber that was baked and not-vented, and also baked and vented with clean dry nitrogen but not rebaked. The characteristics of the Sb films, including sticking probability, surface roughness, grain size, and crystal properties were very different for these conditions, yet comparable values of photocathode yield [or quantum efficiency (QE)] at 284 V were obtained following codeposition of the alkali materials. Photocathodes manufactured with comparatively thick Sb layers exhibited the highest QE and the best 1/e lifetime. The authors speculate that the alkali codeposition enabled optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali materials.

  10. Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

    Science.gov (United States)

    Wistey, Mark Allan

    Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1.31mum: 1.46mum. These techniques offer the promise of inexpensive, high speed fiber networking.

  11. Gravitational influences on the liquid-state homogenization and solidification of aluminum antimonide. [space processing of solar cell material

    Science.gov (United States)

    Ang, C.-Y.; Lacy, L. L.

    1979-01-01

    Typical commercial or laboratory-prepared samples of polycrystalline AlSb contain microstructural inhomogeneities of Al- or Sb-rich phases in addition to the primary AlSb grains. The paper reports on gravitational influences, such as density-driven convection or sedimentation, that cause microscopic phase separation and nonequilibrium conditions to exist in earth-based melts of AlSb. A triple-cavity electric furnace is used to homogenize the multiphase AlSb samples in space and on earth. A comparative characterization of identically processed low- and one-gravity samples of commercial AlSb reveals major improvements in the homogeneity of the low-gravity homogenized material.

  12. Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

    International Nuclear Information System (INIS)

    Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

    2008-01-01

    Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

  13. A Study of the Irradiance- and Temperature-Dependence of Mid-Wave-Infrared (MWIR) Absorption in Indium Antimonide (InSb)

    Science.gov (United States)

    2008-08-01

    Direct valence to conduction band transitions (constant k vector ), (B) Indirect valence to conduction band transitions aided by photon/phonon coupling...feilddt g g dk dk dE dxdk qE dt dt v d v dt→ = = = − h h 1 (2.7) and g dx v dt = , which means that feild dk qE dt = −h . In order to find the...x B k xΨ = + where A and B are variables that are solved, kx is the wave vector and x is the distance. For a realistic solution, the wave function

  14. Eu{sub 7}Ga{sub 6}Sb{sub 8}: A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains

    Energy Technology Data Exchange (ETDEWEB)

    Park, S -M; Kim, S -J; Kanatzidis, M G

    2004-08-01

    The Zintl phase Eu{sub 7}Ga{sub 6}Sb{sub 8} was obtained from a direct element combination reaction at 900 deg. C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17) A, b=17.2876(19) A, c=17.9200(19) A, and Z=8. In Eu{sub 7}Ga{sub 6}Sb{sub 8}, the anionic framework forms infinite chains of [Ga{sub 6}Sb{sub 8}]{sup 14-} which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu{sup 2+} atoms and also within the sheet, Eu{sup 2+} atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga{sub 4}){sup 6+} and dimers (Ga{sub 2}){sup 4+} connected by Sb atoms. The compound is a narrow band-gap semiconductor with E{sub g}{approx}0.6 eV and satisfies the classical Zintl concept. Extended Hueckel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu{sub 7}Ga{sub 6}Sb{sub 8} show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9 K.

  15. Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

    2008-10-01

    Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

  16. Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser

    Science.gov (United States)

    Goddard, Lynford

    2005-12-01

    Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

  17. H L Bhat

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science. H L Bhat. Articles written in Bulletin of Materials Science. Volume 24 Issue 5 October 2001 pp 445-453 Crystal Growth. Growth and characterization of indium antimonide and gallium antimonide crystals · N K Udayashankar H L Bhat · More Details Abstract Fulltext PDF.

  18. High Power Mid-IR Semiconductor Lasers for LADAR

    National Research Council Canada - National Science Library

    Lester, Luke

    2003-01-01

    The growing need for antimonide-based, room temperature, 2-5 micrometers, semiconductor lasers for trace gas spectroscopy, ultra-low loss communication, infrared countermeasures, and ladar motivated this work...

  19. Fast current amplifier for background-limited operation of photovoltaic InSb detectors

    Energy Technology Data Exchange (ETDEWEB)

    Altmann, J; Koehler, S; Lahmann, W

    1981-01-01

    A fast current amplifier for use with photovoltaic indium antimonide detectors is described which was designed for detection of lidar return signals. Near background-limited operation was possible for bandwidths up to 0.8 MHz.

  20. Vertical Gradient Freezing Using Submerged Heater Growth With Rotation and With Weak Magnetic and Electric Fields

    National Research Council Canada - National Science Library

    Bliss, D. F; Holmes, A. M; Wang, X; Ma, N; Iseler, G. W

    2005-01-01

    ...) method utilizing a submerged heater. Electromagnetic stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a weak radial electric current in the melt together with a weak axial magnetic field...

  1. Development of a Prototype 2 mm Fiber-Coupled Seed Laser for Integration in Lidar Transmitter

    Data.gov (United States)

    National Aeronautics and Space Administration — Optimize the performance of Gallium Antimonide (GaSb)-based 2.05 mm lasers (previously developed under JPL’s Research and Technology Development (R&TD) Program)...

  2. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  3. Resonant transducers for solid-state plasma density modulation

    Energy Technology Data Exchange (ETDEWEB)

    Hallock, Gary A., E-mail: hallock@ece.utexas.edu [The University of Texas at Austin, Austin, Texas 78701 (United States); Meier, Mark A., E-mail: mark.a.meier@exxonmobil.com [ExxonMobil Upstream Research Company, Houston, Texas 77389 (United States)

    2016-04-15

    We have developed transducers capable of modulating the plasma density and plasma density gradients in indium antimonide. These transducers make use of piezoelectric drivers to excite acoustic pressure resonance at 3λ/2, generating large amplitude standing waves and plasma density modulations. The plasma density has been directly measured using a laser diagnostic. A layered media model shows good agreement with the experimental measurements.

  4. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Al–Sb bilayer thin films having various thicknesses were deposited by thermal evaporation on ITO-coated conducting glass substrates at a pressure of 10-5 torr. These films were irradiated by Ag12+ heavy ions of energy, 160 MeV, with a fluence of 2.2 × 1013 ions/cm2, to get aluminum antimonide semiconductor.

  5. Influence of crystal–melt interface shape on self-seeding and single ...

    Indian Academy of Sciences (India)

    Unknown

    Self-seeding; orientation; interface shape; antimonide crystals; VDS technique. 1. Introduction ... fundamental characteristics of source materials, various crystal growth models ... to the temperature 50°C above the melting temperature of the crystals ..... Gadkari D B, Lal K B, Shah A P and Arora B M 1997 J. Cryst. Growth 173 ...

  6. Structural, elastic, electronic and optical properties of bi-alkali ...

    Indian Academy of Sciences (India)

    The structural parameters, elastic constants, electronic and optical properties of the bi-alkali ... and efficient method for the calculation of the ground-state ... Figure 2. Optimization curve (E–V) of the bi-alkali antimonides: (a) Na2KSb, (b) Na2RbSb, (c) Na2CsSb, .... ical shape of the charge distributions in the contour plots.

  7. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Many antimonide (Sb) crystals of 8 mm to 18 mm diameter were grown by optimized growth parameters. The forced convection and absence of conducting support to ampoule showed improvement in crystal quality of as grown ingots. Crystals showed preferred orientation and self-seeding. Results on interface shape and ...

  8. The Effects of Strain on the Electrical Properties of Thin Evaporated Films of Semiconductor Compounds

    Science.gov (United States)

    Steel, G. G.

    1970-01-01

    Reports on project intended to establish how electrical resistance, Hall voltage, and magnetoresistance change when a thin film specimen is subjected to mechanical strain. Found resistance of semiconducting film of indium arsenide and indium antimonide decreases with tension and increases with compression. (LS)

  9. 1997 IEEE/LEOS Summer Topical Meeting on Gallium Nitride Materials, Processing and Devices Held in Montreal, Quebec, Canada on 11-15 August 1997

    Science.gov (United States)

    1998-01-01

    refractive index differences in the two branches, their respective dispersion curves will intersect at a certain wavelength, according to our design...wavelengths, DBRs are usually grown lattice- matched to InP using quaternary and ternary phosphide alloys in spite of the low refractive in- dex...validating the refractive index model. In a third step, mirrors based on arsenide-antimonide materials were designed to operate at 1.3 ^.m

  10. Synthesis and characterization of actinide metal compounds formed by combustion

    International Nuclear Information System (INIS)

    Behrens, R.G.; King, M.A.

    1985-01-01

    This paper briefly describes the results of attempts to synthesize arsenides, phosphides, and antimonides of uranium and thorium using Self-Propagating High-Temperature Synthesis (SHS) techniques. This paper first summarizes the chemistry and thermodynamics of these chemical systems, describes SHS synthesis techniques, and then describes the results of the syntheses using data from powder x-ray diffraction, metallographic, and electron microprobe analyses

  11. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    The structural parameters, elastic constants, electronic and optical properties of the bi-alkali antimonides (Na 2 KSb, Na 2 RbSb, Na 2 CsSb, K 2 RbSb, K 2 CsSb and Rb 2 CsSb) were calculated using state-of-the-art density functional theory. Different exchange-correlation potentials were adopted to predict the physical ...

  12. Unconstrained Heterogeneous Colloidal Quantum Dots Embedded in GaAs/GaSb Nanovoids

    Science.gov (United States)

    2014-04-17

    hexadecylamine ( HDA ), and 5 mL of TOP were added to a three-neck flask, which was then degassed in a vacuum and heated to 130 C for 1.5 hours. Next...arsenide GaSb – gallium antimonide HDA – hexadecylamine HDD – hexadecanediol HR-SEM – high-resolution scanning electron microscope HR-TEM – high

  13. Manhattan Project Technical Series The Chemistry of Uranium (I) Chapters 1-10

    International Nuclear Information System (INIS)

    Rabinowitch, E. I.; Katz, J. J.

    1946-01-01

    This constitutes Chapters 1 through 10. inclusive, of The Survey Volume on Uranium Chemistry prepared for the Manhattan Project Technical Series. Chapters are titled: Nuclear Properties of Uranium; Properties of the Uranium Atom; Uranium in Nature; Extraction of Uranium from Ores and Preparation of Uranium Metal; Physical Properties of Uranium Metal; Chemical Properties of Uranium Metal; Intermetallic Compounds and Alloy systems of Uranium; the Uranium-Hydrogen System; Uranium Borides, Carbides, and Silicides; Uranium Nitrides, Phosphides, Arsenides, and Antimonides.

  14. Synthesis and thermoelectric properties of Sb{sub 0.20}CoSb{sub 2.80} skutterudite

    Energy Technology Data Exchange (ETDEWEB)

    Figueirêdo, C.A., E-mail: camila_fig@hotmail.com [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Gallas, M.R. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Institute for Multiscale Simulations, Friedrich-Alexander-Universität, Nägelsbachstrasse 49b, 91052 Erlangen (Germany); Zorzi, J.E. [Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil); Perottoni, C.A. [Universidade Federal do Rio Grande do Sul, PGCIMAT, Instituto de Física, 91501-970 Porto Alegre, RS (Brazil); Universidade de Caxias do Sul, Instituto de Materiais Cerâmicos, 95765-000 Bom Princípio, RS (Brazil)

    2014-06-15

    Highlights: • A HP-HT Sb{sub 0.20}CoSb{sub 2.80} phase was prepared by processing cobalt antimonide at 7.7 GPa and 550 °C, for (at least) 5 min. • The mechanism of formation of this phase involves (i) decomposition of cobalt antimonide into CoSb{sub 2} and Sb, and (ii) insertion of Sb into the remaining cobalt antimonide. • The mechanism of formation is qualitatively different from that responsible for the formation of the high pressure (greater than 20 GPa) phase. - Abstract: Polycrystalline samples of cobalt antimonide (CoSb{sub 2.79}) were submitted to different conditions of pressure, temperature and processing time, in a high-pressure toroidal-type chamber, aiming to maximize the production of the high pressure phase previously observed in experiments with a diamond anvil cell. Rietveld refinements of X-ray powder diffraction data were performed to determine the phase composition and structural parameters. The maximum yield, 89(2) wt.% of Sb{sub x}CoSb{sub 3−x} phase, was obtained at 7.7 GPa, 550 °C and (at least) 5 min of processing time. The mechanism behind the formation of Sb{sub x}CoSb{sub 3−x} at high pressure and high temperature is actually not the same as that previously inferred from experiments at higher pressures (20 GPa) and room temperature with the diamond anvil cell. Indeed, evidences suggest that, at high pressure and high temperature, Sb{sub x}CoSb{sub 3−x} is formed by insertion of Sb resulting from decomposition of cobalt antimonide. Thermal conductivity, Seebeck coefficient and electrical conductivity were estimated for CoSb{sub 2.79} and Sb{sub 0.20}CoSb{sub 2.80}. The thermoelectric figure of merit at room temperature for Sb{sub 0.20}CoSb{sub 2.80} resulted 33% greater than that for CoSb{sub 2.79}.

  15. Status of SAT CID InSb detector technology and applications

    International Nuclear Information System (INIS)

    Chatard, J.P.; Lussereau, A.; Lorans, D.

    1985-01-01

    This paper presents SAT indium antimonide Charge Injection Devices (C.I.D) Technology, post focal plane signal processing and some applications. These detectors are constituted by MOS capacitors realized on InSb wafers using integrated circuit-like processing. When a negative voltage is applied to the structure (put it into depletion) the capacitors form integrating detectors for use in 3-5 μm band. Linear arrays constituted by a line of single capacitors, matrix arrays constituted by a group of two coupled MOS capacitors, collect and store photon generated charge carriers. In the last case, the selection of a site is accomplished by X-Y decoding technique

  16. Performance analysis of InSb based QWFET for ultra high speed applications

    International Nuclear Information System (INIS)

    Subash, T. D.; Gnanasekaran, T.; Divya, C.

    2015-01-01

    An indium antimonide based QWFET (quantum well field effect transistor) with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for Semiconductors (ITRS) requirements of drive current (Semiconductor Industry Association 2010). The performance of the device is investigated using the SYNOPSYS CAD (TCAD) software. InSb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5–10 times low DC power dissipation. (semiconductor devices)

  17. Magnetic susceptibility of curium pnictides

    International Nuclear Information System (INIS)

    Nave, S.E.; Huray, P.G.; Peterson, J.R.; Damien, D.A.; Haire, R.G.

    1981-09-01

    The magnetic susceptibility of microgram quantities of 248 CmP and 248 CmSb has been determined with the use of a SQUID micromagnetic susceptometer over the temperature range 4.2 to 340 K and in the applied magnetic field range of 0.45 to 1600 G. The fcc (NaCl-type) samples yield magnetic transitions at 73K and 162 K for the phosphide and antimonide, respectively. Together with published magnetic data for CmN and CmAs, these results indicate spatially extended exchange interactions between the relatively localized 5f electrons of the metallic actinide atoms

  18. Infrared detectors and arrays; Proceedings of the Meeting, Orlando, FL, Apr. 6, 7, 1988

    International Nuclear Information System (INIS)

    Dereniak, E.L.

    1988-01-01

    The papers contained in this volume provide an overview of recent advances in theoretical and experimental research related to IR detector materials and arrays. The major subject areas covered include IR Schottky barrier silicide arrays, HdCdTe developments, SPRITE technology, superlattice or bandgap-engineered devices, extrinsic silicon technology, indium antimonide technology, and pyroelectric arrays. Papers are presented on time division multiplexed time delay integration, spatial noise in staring IR focal plane arrays, pyroelectrics in a harsh environment, and testing of focal plane arrays

  19. Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications

    Science.gov (United States)

    Addamane, S. J.; Mansoori, A.; Renteria, E. J.; Dawson, N.; Shima, D. M.; Rotter, T. J.; Hains, C. P.; Dawson, L. R.; Balakrishnan, G.

    2016-04-01

    Sb-based metamorphic DBR membranes are developed for InP-based vertical cavity laser applications. The reflectivity of the metamorphic DBR membrane is compared to the reflectivity of a lattice-matched DBR to characterize the optical quality of the DBR membrane. The metamorphic interface between InP and the III-antimonides is found to degrade the reflectivity of the DBR. Therefore, the growth temperature for the metamorphic DBR is optimized in order to obtain highly reflective (>99.8%) III-Sb thin-film membranes.

  20. The role of rare earths in narrow energy gap semiconductors

    International Nuclear Information System (INIS)

    Partin, D.L.; Heremans, J.; Morelli, D.T.; Thrush, C.M.

    1991-01-01

    Narrow energy band gap semiconductors are potentially useful for various devices, including infrared detectors and diode lasers. Rare earth elements have been introduced into lead chalcogenide semiconductors using the molecular beam epitaxy growth process. Europium and ytterbium increase the energy band gap, and nearly lattice-matched heterojunctions have been grown. In some cases, valence changes in the rare earth element cause doping of the alloy. In this paper some initial investigations of the addition of europium to indium antimonide are reported, including the variation of lattice parameter and optical transmission with composition and a negative magnetoresistance effect

  1. Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

    Science.gov (United States)

    Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

    2017-12-01

    Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

  2. Studies of bulk materials for thermoelectric cooling

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, J W; Nolas, G S; Volckmann, E H

    1997-07-01

    The authors discuss ongoing work in three areas of thermoelectric materials research: (1) broad band semiconductors featuring anion networks, (2) filled skutterudites, and (3) polycrystalline Bi-Sb alloys. Key results include: a preliminary evaluation of a previously untested ternary semiconductor, KSnSb; the first reported data in which Sn is used as a charge compensator in filled antimonide skutterudites; the finding that Sn doping does not effect polycrystalline Bi{sub 1{minus}x}Sb{sub x} as it does single crystal samples.

  3. System overview of the Airborne Visible/Infrared Imaging Spectrometer (AVIRIS)

    International Nuclear Information System (INIS)

    Porter, W.M.; Enmark, H.T.

    1988-01-01

    The AVIRIS instrument has been designed to do high spectral resolution remote sensing of the earth. Utilizing both silicon and indium antimonide line array detectors, AVIRIS covers the spectral region from 0.41 to 2.45 microns in 10-nm bands. It was designed to fly aboard NASA's U-2 and ER-2 aircraft, where it will simulate the performance of future spacecraft instrumentation. Flying at an altitude of 20 km, it has an instantaneous field of view of 20 m and views a swath over 10 km wide. With an ability to record 40 minutes of data, it can, during a single flight, capture 500 km of flight line

  4. Indium and thallium

    International Nuclear Information System (INIS)

    1976-01-01

    The physical and the chemical properties and methods for producing indium and its main compounds have been studied. Presented are the major fields of application of the metal, inclusive of the atomic and space engineering. Described are the natural occurrence and the types of deposits of this disseminated element. Given are the main methods for extracting In from various raw materials, the methods being also evaluated economically. It is inferred, that all the conditions being equal, the extraction technique yields In at a lesser cost, a higher recovery and higher labour productivity. Described are methods for manufacturing the frequently used In compounds, such as the antimonide, arsenide, phosphide

  5. High thermal conductivity materials for thermal management applications

    Science.gov (United States)

    Broido, David A.; Reinecke, Thomas L.; Lindsay, Lucas R.

    2018-05-29

    High thermal conductivity materials and methods of their use for thermal management applications are provided. In some embodiments, a device comprises a heat generating unit (304) and a thermally conductive unit (306, 308, 310) in thermal communication with the heat generating unit (304) for conducting heat generated by the heat generating unit (304) away from the heat generating unit (304), the thermally conductive unit (306, 308, 310) comprising a thermally conductive compound, alloy or composite thereof. The thermally conductive compound may include Boron Arsenide, Boron Antimonide, Germanium Carbide and Beryllium Selenide.

  6. Photocathodes inside superconducting cavities. Studies on the feasibility of a superconducting photoelectron source of high brightness. External report

    International Nuclear Information System (INIS)

    Michalke, A.

    1992-01-01

    We have done studies and experiments to explore the feasibility of a photoemission RF gun with a superconducting accelerator cavity. This concept promises to provide an electron beam of high brightness in continuous operation. It is thus of strong interest for a free-electron-laser or a linear collider based on a superconducting accelerator. In a first step we studied possible technical solutions for its components, especially the material of the photocathode and the geometrical shape of the cavity. Based on these considerations, we developed the complete design for a prototype electron source. The cathode material was chosen to be alkali antimonide. In spite of its sensitivity, it seems to be the best choice for a gun with high average current due to its high quantum efficiency. The cavity shape was at first a reentrant-type single cell of 500 MHz. It is now replaced by a more regular two-and-half cell shape, an independent half cell added for emittance correction. Its beam dynamics properties are investigated by numerical simulations; we estimated a beam brightness of about 5x10 11 A/(m.rad) 2 . But the mutual interactions between alkali antimonide photocathode and superconducting cavity must be investigated experimentally, because they are completely unkown. (orig.)

  7. Study of the influence of semiconductor material parameters on acoustic wave propagation modes in GaSb/AlSb bi-layered structures by Legendre polynomial method

    Energy Technology Data Exchange (ETDEWEB)

    Othmani, Cherif, E-mail: othmanicheriffss@gmail.com; Takali, Farid; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi

    2016-09-01

    The propagation of Rayleigh–Lamb waves in bi-layered structures is studied. For this purpose, an extension of the Legendre polynomial (LP) method is proposed to formulate the acoustic wave equation in the bi-layered structures induced by thin film Gallium Antimonide (GaSb) and with Aluminum Antimonide (AlSb) substrate in moderate thickness. Acoustic modes propagating along a bi-layer plate are shown to be quite different than classical Lamb modes, contrary to most of the multilayered structures. The validation of the LP method is illustrated by a comparison between the associated numerical results and those obtained using the ordinary differential equation (ODE) method. The convergency of the LP method is discussed through a numerical example. Moreover, the influences of thin film GaSb parameters on the characteristics Rayleigh–Lamb waves propagation has been studied in detail. Finally, the advantages of the Legendre polynomial (LP) method to analyze the multilayered structures are described. All the developments performed in this work were implemented in Matlab software.

  8. Study of the influence of semiconductor material parameters on acoustic wave propagation modes in GaSb/AlSb bi-layered structures by Legendre polynomial method

    International Nuclear Information System (INIS)

    Othmani, Cherif; Takali, Farid; Njeh, Anouar; Ben Ghozlen, Mohamed Hédi

    2016-01-01

    The propagation of Rayleigh–Lamb waves in bi-layered structures is studied. For this purpose, an extension of the Legendre polynomial (LP) method is proposed to formulate the acoustic wave equation in the bi-layered structures induced by thin film Gallium Antimonide (GaSb) and with Aluminum Antimonide (AlSb) substrate in moderate thickness. Acoustic modes propagating along a bi-layer plate are shown to be quite different than classical Lamb modes, contrary to most of the multilayered structures. The validation of the LP method is illustrated by a comparison between the associated numerical results and those obtained using the ordinary differential equation (ODE) method. The convergency of the LP method is discussed through a numerical example. Moreover, the influences of thin film GaSb parameters on the characteristics Rayleigh–Lamb waves propagation has been studied in detail. Finally, the advantages of the Legendre polynomial (LP) method to analyze the multilayered structures are described. All the developments performed in this work were implemented in Matlab software.

  9. Debye screening length effects of nanostructured materials

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2014-01-01

    This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped ...

  10. Einstein's photoemission emission from heavily-doped quantized structures

    CERN Document Server

    Ghatak, Kamakhya Prasad

    2015-01-01

    This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields  that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials  and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring   physical properties in the presence of intense light waves w...

  11. Heavily-doped 2D-quantized structures and the Einstein relation

    CERN Document Server

    Ghatak, Kamakhya P

    2015-01-01

    This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing ma...

  12. Grating spectrometer installation for electron cyclotron emission measurements on the DIII-D tokamak using circular waveguide and synchronous detection

    International Nuclear Information System (INIS)

    Lohr, J.; Jahns, G.; Moeller, C.; Prater, R.

    1986-01-01

    The grating spectrometer installation on the DIII-D tokamak uses fundamental circular waveguide propagating the TE 11 lowest-order mode followed by oversized circular guide carrying the low-loss TE 01 mode. The short section of fundamental guide permits use of an electronic chopper operating at 100 kHz for both calibration and plasma operation. By using ac-coupled amplifiers tuned to the chopping frequency, the background signal generated in the indium antimonide detectors by neutrons and x rays is automatically subtracted and the system noise bandwidth is reduced. Compared with a quasi-optical system, the much smaller fundamental horn and front-end waveguide allow the waveguide system to be located outside a gate valve. With this configuration the entire waveguide run, including the actual horn and vacuum window used during plasma operations, can be included in the calibration setup

  13. Grating spectrometer installation for electron cyclotron emission measurements on the DIII-D tokamak using circular waveguide and synchronous detection

    International Nuclear Information System (INIS)

    Lohr, J.; Jahns, G.; Moeller, C.; Prater, R.

    1986-03-01

    The grating spectrometer installation on the DIII-D tokamak uses fundamental circular waveguide propagating the TE 11 lowest order mode followed by oversized circular guide carrying the low loss TE 01 mode. The short section of fundamental guide permits use of an electronic chopper operating at 100 kHz for both calibration and plasma operation. By using ac-coupled amplifiers tuned to the chopping frequency, the background signal generated in the indium antimonide detectors by neutrons and x-rays is automatically subtracted and the system noise bandwidth is reduced. Compared with a quasi-optical system, the much smaller fundamental horn and front end waveguide allow the waveguide system to be located outside a gate valve. With this configuration the entire waveguide run, including the actual horn and vacuum window used during plasma operations, can be included in the calibration set-up

  14. Antimony contamination, consequences and removal techniques: A review.

    Science.gov (United States)

    Li, Jiayu; Zheng, BoHong; He, Yangzhuo; Zhou, Yaoyu; Chen, Xiao; Ruan, Shan; Yang, Yuan; Dai, Chunhao; Tang, Lin

    2018-07-30

    A significant amount of antimony (Sb) enters into the environment every year because of the wide use of Sb compounds in industry and agriculture. The exposure to Sb, either direct consumption of Sb or indirectly, may be fatal to the human health because both antimony and antimonide are toxic. Firstly, the introduction of Sb chemistry, distribution and health threats are presented in this review, which is essential to the removal techniques. Then, we provide the recent and common techniques to remove Sb, including adsorption, coagulation/flocculation, membrane separation, electrochemical methods, ion exchange and extraction. Removal techniques concentrate on the advantages, drawbacks, economical efficiency and the recent achievements of each technique. We also take an overall consideration of experimental conditions, comparison criteria, and economic aspects. Copyright © 2018 Elsevier Inc. All rights reserved.

  15. Thermodynamics of (Ga, In)-Sb-O-Si and impact on dewetting process

    Energy Technology Data Exchange (ETDEWEB)

    Sylla, L. [Cyberstar, Echirolles (France); Duffar, T. [SIMaP-EPM, Saint Martin d' Heres (France)

    2011-11-15

    A thermodynamic study is performed for the systems (Ga or In)-Sb-O-Si in order to better understand the difference observed during dewetting experiments of GaSb and InSb in silica ampoules. Results show that the melts can be considered as non reactive toward silica. When the atmosphere is clean ({<=}1 ppm O{sub 2}), no oxide is formed, while, under oxidising atmosphere, oxides exist above the melting point of the antimonide and are known to increase the wetting angle of the melt on the crucible. However the temperature range for oxide stability is smaller in the case of InSb and this may explain why dewetting is easy for GaSb in presence of oxygen, while it is difficult for InSb. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

    International Nuclear Information System (INIS)

    Chao, K.; Zhang, Z.; Ebert, P.; Shih, C.K.

    1999-01-01

    Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism. copyright 1999 The American Physical Society

  17. Advances in gas avalanche photomultipliers

    CERN Document Server

    Breskin, Amos; Buzulutskov, A F; Chechik, R; Garty, E; Shefer, G; Singh, B K

    2000-01-01

    Gas avalanche detectors, combining solid photocathodes with fast electron multipliers, provide an attractive solution for photon localization over very large sensitive areas and under high illumination flux. They offer single-photon sensitivity and the possibility of operation under very intense magnetic fields. We discuss the principal factors governing the operation of gas avalanche photomultipliers. We summarize the recent progress made in alkali-halide and CVD-diamond UV-photocathodes, capable of operation under gas multiplication, and novel thin-film protected alkali-antimonide photocathodes, providing, for the first time, the possibility of operating gas photomultipliers in the visible range. Electron multipliers, adequate for these photon detectors, are proposed and some applications are briefly discussed.

  18. Electronic structure and high pressure phase transition in LaSb and CeSb

    International Nuclear Information System (INIS)

    Mathi Jaya, S.; Sanyal, S.P.

    1992-09-01

    The electronic structure and high pressure structural phase transition in cerium and lanthanum antimonides have been investigated using the tight binding LMTO method. The calculation of total energy reveals that the simple tetragonal structure is found to be stable at high pressures for both the compounds. In the case of LaSb, the calculated value of the equilibrium cell volume and the cell volume at which phase transition occurs are found to have a fairly good agreement with the experimental results. However, in the case of CeSb, the agreement is not as good as in LaSb. We also predicted the most favoured c/a value in the high pressure phase (simple tetragonal) for these compounds. Further we present the calculated results on the electronic structure of these systems at the equilibrium as well as at the reduced cell volumes. (author). 8 refs, 11 figs, 1 tab

  19. Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

    International Nuclear Information System (INIS)

    Romanov, V. V.; Dement’ev, P. A.; Moiseev, K. D.

    2016-01-01

    Indium-antimonide quantum dots (7–9 × 10"9 cm"2) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.

  20. Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

    Directory of Open Access Journals (Sweden)

    Aho Arto

    2017-01-01

    Full Text Available Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

  1. Innovation in crystal growth: A personal perspective

    Science.gov (United States)

    Mullin, J. B.

    2008-04-01

    The evolution of crystal growth has been crucially dependent on revolutionary innovations and initiatives involving ideas, technology and communication. A personal perspective is presented on some of these aspects in connection with the early history of semiconductors that have helped evolve our knowledge and advance the science and technology of crystal growth. The presentation considers examples from work on germanium, silicon, indium antimonide, gallium arsenide, indium phosphide, gallium phosphide and mercury cadmium telluride. In connection with metal organic vapour phase epitaxy (MOVPE), the influence of adduct purification for alkyls is noted together with the growth of Hg xCd 1-xTe. The role of crystal growth organisations together with initiatives in the publication of the Journal of Crystal Growth (JCG) and the pivotal role of the International Organisation of Crystal Growth (IOCG) are also highlighted in the quest for scientific excellence.

  2. Nanomaterials for Electronics and Optoelectronics

    Science.gov (United States)

    Koehne, Jessica E.; Meyyappan, M.

    2011-01-01

    Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

  3. The effects of electron and proton radiation on GaSb infrared solar cells

    Science.gov (United States)

    Gruenbaum, P. E.; Avery, J. E.; Fraas, L. M.

    1991-01-01

    Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).

  4. Transient effects of ionizing radiation in Si, InGaAsP, GaAlSb, and Ge photodiodes

    International Nuclear Information System (INIS)

    Wiczer, J.J.; Barnes, C.E.; Dawson, L.R.

    1980-01-01

    Certain military applications require the continuous operation of optoelectronic information transfer systems during exposure to ionizing radiation. In such an environment the optical detector can be the system element which limits data transmission. We report here the measured electrical and optical characteristics of an irradiation tolerant photodiode fabricated from a double heterojunction structure in the gallium aluminum antimonide (GaAlSb) ternary semiconductor system. A series of tests at Sandia Laboratories' Relativistic Electron Beam Accelerator (REBA) subjected this device and commercially available photodiodes (made from silicon, germanium, and indium gallium arsenide phosphide) to dose rate levels of 10 7 to 10 8 rads/sec. The results of these tests show that the thin GaAlSb double heterojunction photodiode structure generates significantly less unwanted radiation induced current density than that of the next best commercial device

  5. Crystal structure, magnetism, {sup 89}Y solid state NMR, and {sup 121}Sb Moessbauer spectroscopic investigations of YIrSb

    Energy Technology Data Exchange (ETDEWEB)

    Benndorf, Christopher [Institut fuer Physikalische Chemie, Universitaet Muenster (Germany); Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Heletta, Lukas; Block, Theresa; Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster (Germany); Eckert, Hellmut [Institut fuer Physikalische Chemie, Universitaet Muenster (Germany); Institute of Physics in Sao Carlos, University of Sao Paulo, Sao Carlos (Brazil)

    2017-02-15

    The ternary antimonide YIrSb was synthesized from the binary precursor YIr and elemental antimony by a diffusion controlled solid-state reaction. Single crystals were obtained by a flux technique with elemental bismuth as an inert solvent. The YIrSb structure (TiNiSi type, space group Pnma) was refined from single-crystal X-ray diffractometer data: a = 711.06(9), b = 447.74(5), c = 784.20(8) pm, wR{sub 2} = 0.0455, 535 F{sup 2} values, 20 variables. {sup 89}Y solid state MAS NMR and {sup 121}Sb Moessbauer spectra show single resonance lines in agreement with single-crystal X-ray data. YIrSb is a Pauli paramagnet. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Metallization for Yb14MnSb11-Based Thermoelectric Materials

    Science.gov (United States)

    Firdosy, Samad; Li, Billy Chun-Yip; Ravi, Vilupanur; Sakamoto, Jeffrey; Caillat, Thierry; Ewell, Richard C.; Brandon, Erik J.

    2011-01-01

    Thermoelectric materials provide a means for converting heat into electrical power using a fully solid-state device. Power-generating devices (which include individual couples as well as multicouple modules) require the use of ntype and p-type thermoelectric materials, typically comprising highly doped narrow band-gap semiconductors which are connected to a heat collector and electrodes. To achieve greater device efficiency and greater specific power will require using new thermoelectric materials, in more complex combinations. One such material is the p-type compound semiconductor Yb14MnSb11 (YMS), which has been demonstrated to have one of the highest ZT values at 1,000 C, the desired operational temperature of many space-based radioisotope thermoelectric generators (RTGs). Despite the favorable attributes of the bulk YMS material, it must ultimately be incorporated into a power-generating device using a suitable joining technology. Typically, processes such as diffusion bonding and/or brazing are used to join thermoelectric materials to the heat collector and electrodes, with the goal of providing a stable, ohmic contact with high thermal conductivity at the required operating temperature. Since YMS is an inorganic compound featuring chemical bonds with a mixture of covalent and ionic character, simple metallurgical diffusion bonding is difficult to implement. Furthermore, the Sb within YMS readily reacts with most metals to form antimonide compounds with a wide range of stoichiometries. Although choosing metals that react to form high-melting-point antimonides could be employed to form a stable reaction bond, it is difficult to limit the reactivity of Sb in YMS such that the electrode is not completely consumed at an operating temperature of 1,000 C. Previous attempts to form suitable metallization layers resulted in poor bonding, complete consumption of the metallization layer or fracture within the YMS thermoelement (or leg).

  7. InAs/GaSb type-II superlattice infrared detectors: Future prospect

    Science.gov (United States)

    Rogalski, A.; Martyniuk, P.; Kopytko, M.

    2017-09-01

    Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall (SRH) lifetime are equal. InAs/GaSb T2SL photodetectors offer similar performance to HgCdTe at an equivalent cut-off wavelength, but with a sizeable penalty in operating temperature, due to the inherent difference in SRH lifetimes. It is predicted that since the future infrared (IR) systems will be based on the room temperature operation of depletion-current limited arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to the system optics, the material system with long SRH lifetime will be required. Since T2SLs are very much resisted in attempts to improve its SRH lifetime, currently the only material that meets this requirement is HgCdTe. Due to less ionic chemical bonding, III-V semiconductors are more robust than their II-VI counterparts. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability

  8. Photocathodes for High Repetition Rate Light Sources

    Energy Technology Data Exchange (ETDEWEB)

    Ben-Zvi, Ilan [Stony Brook Univ., NY (United States). Dept. of Physics and Astronomy. Center for Accelerator Science and Education

    2014-04-20

    This proposal brought together teams at Brookhaven National Laboratory (BNL), Lawrence Berkeley National Laboratory (LBNL) and Stony Brook University (SBU) to study photocathodes for high repetition rate light sources such as Free Electron Lasers (FEL) and Energy Recovery Linacs (ERL). Below details the Principal Investigators and contact information. Each PI submits separately for a budget through his corresponding institute. The work done under this grant comprises a comprehensive program on critical aspects of the production of the electron beams needed for future user facilities. Our program pioneered in situ and in operando diagnostics for alkali antimonide growth. The focus is on development of photocathodes for high repetition rate Free Electron Lasers (FELs) and Energy Recovery Linacs (ERLs), including testing SRF photoguns, both normal-­conducting and superconducting. Teams from BNL, LBNL and Stony Brook University (SBU) led this research, and coordinated their work over a range of topics. The work leveraged a robust infrastructure of existing facilities and the support was used for carrying out the research at these facilities. The program concentrated in three areas: a) Physics and chemistry of alkali-­antimonide cathodes (BNL – LBNL) b) Development and testing of a diamond amplifier for photocathodes (SBU -­ BNL) c) Tests of both cathodes in superconducting RF photoguns (SBU) and copper RF photoguns (LBNL) Our work made extensive use of synchrotron radiation materials science techniques, such as powder-­ and single-­crystal diffraction, x-­ray fluorescence, EXAFS and variable energy XPS. BNL and LBNL have many complementary facilities at the two light sources associated with these laboratories (NSLS and ALS, respectively); use of these will be a major thrust of our program and bring our understanding of these complex materials to a new level. In addition, CHESS at Cornell will be used to continue seamlessly throughout the NSLS dark period and

  9. On possibility of superconductivity in SnSb: A first principle study

    Energy Technology Data Exchange (ETDEWEB)

    Dabhi, Shweta D. [Department of Physics, M. K. Bhavnagar University, Bhavnagar 364001 (India); Shrivastava, Deepika [Department of Physics, Barkatullah University, Bhopal 462026 (India); Jha, Prafulla K., E-mail: prafullaj@yahoo.com [Department of Physics, Faculty of Science, The M. S. University of Baroda, Vadodara 390002 (India); Sanyal, Sankar P. [Department of Physics, Barkatullah University, Bhopal 462026 (India)

    2016-09-15

    Highlights: • Superconducting property of SnSb is predicted by ab-initio calculations. • Electronic properties of SnSb in RS phase shows metallic behaviour similar to SnAs. • Phonon dispersion confirms the dynamical stability of SnSb in RS phase. • Superconducting transition temperature is 3.1 K, slightly lower than that of SnAs. • Calculated thermodynamic properties are also reported. - Abstract: The electronic, phonon structure and superconducting properties of tin antimonide (SnSb) in rock-salt (RS) structure are calculated using first-principles density functional theory. The electronic band structure and density of states show metallic behavior. The phonon frequencies are positive throughout the Brillouin zone in rock-salt structure indicating its stability in that phase. Superconductivity of SnSb in RS phase is discussed in detail by calculating phonon linewidths, Eliashberg spectral function, electron-phonon coupling constant and superconducting transition temperature. SnSb is found to have a slightly lower T{sub C} (3.1 K), as compared to SnAs.

  10. Characterization of Cr-rich Cr-Sb multilayer films: Syntheses of a new metastable phase using modulated elemental reactants

    International Nuclear Information System (INIS)

    Regus, Matthias; Mankovsky, Sergiy; Polesya, Svitlana; Kuhn, Gerhard; Ditto, Jeffrey; Schürmann, Ulrich; Jacquot, Alexandre; Bartholomé, Kilian; Näther, Christian; Winkler, Markus; König, Jan D.; Böttner, Harald; Kienle, Lorenz; Johnson, David C.; Ebert, Hubert; Bensch, Wolfgang

    2015-01-01

    The new metastable compound Cr 1+x Sb with x up to 0.6 has been prepared via a thin film approach using modulated elemental reactants and investigated by in-situ X-ray reflectivity, X-ray diffraction, differential scanning calorimetry, energy dispersive X-ray analysis as well as transmission electron microscopy and atomic force microscopy. The new Cr-rich antimonide crystallizes in a structure related to the Ni 2 In-type structure, where the crystallographic position (1/3, 2/3, 3/4) is partially occupied by excess Cr. The elemental layers of the pristine material interdiffused significantly before Cr 1+x Sb crystallized. A change in the activation energy was observed for the diffusion process when crystal growth starts. First-principles electronic structure calculations provide insight into the structural stability, magnetic properties and resistivity of Cr 1+x Sb. - Graphical abstract: 1 amorphous multilayered film 2 interdiffused amorphous film 3 metastable crystalline phase 4 thermodynamic stable phase (and by-product). - Highlights: • Interdiffusion of amorphous Cr and Sb occurs before crystallization. • Crystallization of a new metastable phase Cr 1.6 Sb in Ni 2 In-type structure. • The new Cr-rich phase shows half-metallic behavior

  11. Synthesis, crystallographic and magnetic properties of protactinium pnictides

    International Nuclear Information System (INIS)

    Hery, Yves.

    1979-03-01

    From a theoretical point of view, protactinium lies in a very important place in the periodic system for it seems to be the first element of the actinide series where the 5f state is occupied. We have studied protactinium pnictides, particularly arsenides and antimonides. PaAs 2 , Pa 3 As 4 , PaSb 2 and Pa 3 Sb 4 were synthetized and their crystallographic properties were determined and discussed. We have measured the magnetic susceptibilities of PaC, PaAs 2 and PaSb 2 . Protactinium exhibits a dual character. In its monocarbide, which is a weakly diamagnet, it behaves as a transition element while in the temperature independent paramagnets PaAs 2 and PaSb 2 , it behaves like a 'f' element. This 'f' element character increases with increasing metal-metal distances. Furthermore the radial expansion of the protactinium 5f orbital seems to be more important than the Uranium one, and consequently the corresponding protactinium 5f electrons are less localized. In addition, some protactinium chalcogenides (βPaS 2 , γPaSe 2 and PaOSe) have been identified [fr

  12. Near-Infrared Mapping Spectrometer for investigation of Jupiter and its satellites

    International Nuclear Information System (INIS)

    Aptaker, I.M.

    1988-01-01

    The Near-Infrared-Mapping Spectrometer (NIMS) is one of the science instruments in the Galileo mission, which will explore Jupiter and its satellites in the mid-1990's. The NIMS experiment will map geological units on the surfaces of the Jovian satellites and characterize their mineral content; and, for the atmosphere of Jupiter, investigate cloud properties and the spatial and temporal variability of molecular abundances. The optics are gold-coated reflective and consist of a telescope and a grating spectrometer. The balance of the instrument includes a 17-detector (silicon and indium antimonide) focal plane array, a tuning fork chopper, microprocessor-controlled electronics, and a passive radiative cooler. A wobbling secondary mirror in the telescope provides 20 pixels in one dimension of spatial scanning in a pushbroom mode with 0.5 mr x 0.5 mr instantaneous field of view. The spectral range is 0.7-5.2 microns; resolution is 0.025 micron. NIMS is the first infrared experiment to combine both spatial and spectral mapping capability in one instrument

  13. Terahertz plasmon-induced transparency based on asymmetric dual-disk resonators coupled to a semiconductor InSb waveguide and its biosensor application

    Science.gov (United States)

    Shahamat, Yadollah; Vahedi, Mohammad

    2017-06-01

    An ultracompact double eight-shaped plasmonic structure for the realization of plasmon-induced transparency (PIT) in the terahertz (THz) region has been studied. The device consists of a semiconductor-insulator-semiconductor bus waveguide coupled to the dual-disk resonators. Indium antimonide is employed to excite SPP in the THz region. The transmission characteristics of the proposed device are simulated numerically by the finite-difference time-domain method. In addition, a theoretical analysis based on the coupled-mode theory for transmission features is presented and compared with the numerical results. Results are in good agreement. Also, the dependence of PIT frequency characteristics on the radius of the outer disk is discussed in detail. In addition, by removing one of the outer disk resonators, double-PIT peaks can be observed in the transmission spectrum, and the physical mechanism of the appeared peaks is investigated. Finally, an application of the proposed structure for distinguishing different states of DNA molecules is discussed. Results show that the maximum sensitivity with 654 GHz/RIU-1 could be obtained for a single PIT structure. The frequency shifts equal to 37 and 99 GHz could be observed for the denatured and the hybridized DNA states, respectively.

  14. Universality of modular symmetries in two-dimensional magnetotransport

    Science.gov (United States)

    Olsen, K. S.; Limseth, H. S.; Lütken, C. A.

    2018-01-01

    We analyze experimental quantum Hall data from a wide range of different materials, including semiconducting heterojunctions, thin films, surface layers, graphene, mercury telluride, bismuth antimonide, and black phosphorus. The fact that these materials have little in common, except that charge transport is effectively two-dimensional, shows how robust and universal the quantum Hall phenomenon is. The scaling and fixed point data we analyzed appear to show that magnetotransport in two dimensions is governed by a small number of universality classes that are classified by modular symmetries, which are infinite discrete symmetries not previously seen in nature. The Hall plateaux are (infrared) stable fixed points of the scaling-flow, and quantum critical points (where the wave function is delocalized) are unstable fixed points of scaling. Modular symmetries are so rigid that they in some cases fix the global geometry of the scaling flow, and therefore predict the exact location of quantum critical points, as well as the shape of flow lines anywhere in the phase diagram. We show that most available experimental quantum Hall scaling data are in good agreement with these predictions.

  15. Photoconduction spectroscopy of p-type GaSb films

    Energy Technology Data Exchange (ETDEWEB)

    Shura, M.W., E-mail: Megersa.Shura@live.nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Wagener, V.; Botha, J.R.; Wagener, M.C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 {mu}m. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley-Read-Hall lifetime and maximum value of the surface recombination velocity.

  16. First-principles calculations of the electronic and structural properties of GaSb

    Energy Technology Data Exchange (ETDEWEB)

    Castaño-González, E.-E. [Universidad del Norte, Grupo de Investigación en Física Aplicada, Departamento de Física (Colombia); Seña, N. [Universidad Nacional de Colombia-Colombia, Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones (Colombia); Mendoza-Estrada, V.; González-Hernández, R., E-mail: rhernandezj@uninorte.edu.co [Universidad del Norte, Grupo de Investigación en Física Aplicada, Departamento de Física (Colombia); Dussan, A. [Universidad Nacional de Colombia-Colombia, Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones (Colombia); Mesa, F., E-mail: fredy.mesa@urosario.edu.co [Universidad del Rosario, Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas (Colombia)

    2016-10-15

    In this paper, we carried out first-principles calculations in order to investigate the structural and electronic properties of the binary compound gallium antimonide (GaSb). This theoretical study was carried out using the Density Functional Theory within the plane-wave pseudopotential method. The effects of exchange and correlation (XC) were treated using the functional Local Density Approximation (LDA), generalized gradient approximation (GGA): Perdew–Burke–Ernzerhof (PBE), Perdew-Burke-Ernzerhof revised for solids (PBEsol), Perdew-Wang91 (PW91), revised Perdew–Burke–Ernzerhof (rPBE), Armiento–Mattson 2005 (AM05) and meta-generalized gradient approximation (meta-GGA): Tao–Perdew–Staroverov–Scuseria (TPSS) and revised Tao–Perdew–Staroverov–Scuseria (RTPSS) and modified Becke-Johnson (MBJ). We calculated the densities of state (DOS) and band structure with different XC potentials identified and compared them with the theoretical and experimental results reported in the literature. It was discovered that functional: LDA, PBEsol, AM05 and RTPSS provide the best results to calculate the lattice parameters (a) and bulk modulus (B{sub 0}); while for the cohesive energy (E{sub coh}), functional: AM05, RTPSS and PW91 are closer to the values obtained experimentally. The MBJ, Rtpss and AM05 values found for the band gap energy is slightly underestimated with those values reported experimentally.

  17. Thermophotovoltaic Arrays for Electrical Power Generation

    International Nuclear Information System (INIS)

    Sarnoff Corporation

    2003-01-01

    Sarnoff has designed an integrated array of thermophotovoltaic (TPV) cells based on the In(Al)GaAsSb/GaSb materials system. These arrays will be used in a system to generate electrical power from a radioisotope heat source that radiates at temperatures from 700 to 1000 C. Two arrays sandwich the slab heat source and will be connected in series to build voltage. Between the arrays and the heat source is a spectral control filter that transmits above-bandgap radiation and reflects below-bandgap radiation. The goal is to generate 5 mW of electrical power at 3 V from a 700 C radiant source. Sarnoff is a leader in antimonide-based TPV cell development. InGaAsSb cells with a bandgap of 0.53 eV have operated at system conversion efficiencies greater than 17%. The system included a front-surface filter, and a 905 C radiation source. The cells were grown via organo-metallic vapor-phase epitaxy. Sarnoff will bring this experience to bear on the proposed project. The authors first describe array and cell architecture. They then present calculated results showing that about 80 mW of power can be obtained from a 700 C radiator. Using a conservative array design, a 5-V output is possible

  18. Recent progress in nickel carcinogenesis. [Cornybacterium; E. coli; S. typhimurium; B. subtillis

    Energy Technology Data Exchange (ETDEWEB)

    Sunderman, F.W. Jr.

    1984-01-01

    Research on nickel carcinogenesis from 1979 to 1983 is reviewed. Epidemiological studies have strengthened the evidence that workers in nickel refineries have increased risks of lung and sinonasal cancers, but have not substantiated increased risks of respiratory cancers in other nickel-exposed workers. Carcinogenesis bioassays have demonstrated carcinogenicity of certain nickel sulfide, hydroxide, selenide, arsenide, antimonide, and telluride compounds following parenteral administration to rodents. Positive bacterial mutagenesis tests have been obtained with Ni(II) in Cornybacterium, but not in E. coli, S. typhimurium, or B. subtilis. Transformation assays of several soluble and crystalline Ni compounds have been positive in Syrian hamster embryo cells. Ni(II) binds to DNA, RNA, and nucleoproteins, and becomes localized in nucleoli. Genotoxic effects of Ni include: (a) chromosomal aberrations, including sister-chromatid exchanges, (b) DNA strandbreaks and DNA-protein cross-links, (c) inhibition of DNA and RNA synthesis, (d) infidelity of DNA transcription, and (e) mutations at the HGPRTase locus in Chinese hamster cells and the TK locus in mouse lymphoma cells. These findings are consistent with somatic mutation as the mechanism for initiation of nickel carcinogenesis. Ni compounds cause reversible transition of double-stranded poly(dG-dC) DNA from the right-handed B-helix to the left-handed Z-helix, suggesting a mechanism whereby nickel might modulate oncogene expression. 99 references, 6 tables.

  19. Superconductivity of ternary metal compounds prepared at high pressures

    CERN Document Server

    Shirotani, I

    2003-01-01

    Various ternary metal phosphides, arsenides, antimonides, silicides and germanides have been prepared at high temperatures and high pressures. These ternary metal compounds can be classified into four groups: [1] metal-rich compounds MM' sub 4 X sub 2 and [2] MM'X, [3] non-metal-rich compounds MXX' and [4] MM' sub 4 X sub 1 sub 2 (M and M' = metal element; X and X' = non-metal element). We have studied the electrical and magnetic properties of these materials at low temperatures, and found many new superconductors with the superconducting transition temperature (T sub c) of above 10 K. The metal-rich compound ZrRu sub 4 P sub 2 with a tetragonal structure showed the superconducting transition at around 11 K, and had an upper critical field (H sub c sub 2) of 12.2 tesla (T) at 0 K. Ternary equiatomic compounds ZrRuP and ZrRuSi crystallize in two modifications, a hexagonal Fe sub 2 P-type structure [h-ZrRuP(Si)] and an orthorhombic Co sub 2 P-type structure [o-ZrRuP(Si)]. Both h-ZrRuP and h-ZrRuSi have rather h...

  20. Neuromorphic infrared focal plane performs sensor fusion on-plane local-contrast-enhancement spatial and temporal filtering

    Science.gov (United States)

    Massie, Mark A.; Woolaway, James T., II; Curzan, Jon P.; McCarley, Paul L.

    1993-08-01

    An infrared focal plane has been simulated, designed and fabricated which mimics the form and function of the vertebrate retina. The `Neuromorphic' focal plane has the capability of performing pixel-based sensor fusion and real-time local contrast enhancement, much like the response of the human eye. The device makes use of an indium antimonide detector array with a 3 - 5 micrometers spectral response, and a switched capacitor resistive network to compute a real-time 2D spatial average. This device permits the summation of other sensor outputs to be combined on-chip with the infrared detections of the focal plane itself. The resulting real-time analog processed information thus represents the combined information of many sensors with the advantage that analog spatial and temporal signal processing is performed at the focal plane. A Gaussian subtraction method is used to produce the pixel output which when displayed produces an image with enhanced edges, representing spatial and temporal derivatives in the scene. The spatial and temporal responses of the device are tunable during operation, permitting the operator to `peak up' the response of the array to spatial and temporally varying signals. Such an array adapts to ambient illumination conditions without loss of detection performance. This paper reviews the Neuromorphic infrared focal plane from initial operational simulations to detailed design characteristics, and concludes with a presentation of preliminary operational data for the device as well as videotaped imagery.

  1. Platinum-group elements fractionation by selective complexing, the Os, Ir, Ru, Rh-arsenide-sulfide systems above 1020 °C

    Science.gov (United States)

    Helmy, Hassan M.; Bragagni, Alessandro

    2017-11-01

    The platinum-group element (PGE) contents in magmatic ores and rocks are normally in the low μg/g (even in the ng/g) level, yet they form discrete platinum-group mineral (PGM) phases. IPGE (Os, Ir, Ru) + Rh form alloys, sulfides, and sulfarsenides while Pt and Pd form arsenides, tellurides, bismuthoids and antimonides. We experimentally investigate the behavior of Os, Ru, Ir and Rh in As-bearing sulfide system between 1300 and 1020 °C and show that the prominent mineralogical difference between IPGE (+Rh) and Pt and Pd reflects different chemical preference in the sulfide melt. At temperatures above 1200 °C, Os shows a tendency to form alloys. Ruthenium forms a sulfide (laurite RuS2) while Ir and Rh form sulfarsenides (irarsite IrAsS and hollingworthite RhAsS, respectively). The chemical preference of PGE is selective: IPGE + Rh form metal-metal, metal-S and metal-AsS complexes while Pt and Pd form semimetal complexes. Selective complexing followed by mechanical separation of IPGE (and Rh)-ligand from Pt- and Pd-ligand associations lead to PGE fractionation.

  2. Materials technology for InSb MISFET applications

    International Nuclear Information System (INIS)

    Barth, W.; Chen, C.W.; Lile, D.L.; Junga, F.

    1989-01-01

    The narrow and direct bandgap of indium antimonide is frequently used to good advantage in detection of light in the infra-red region; however, to data little use has been made of the high mobilities associated with this material. Although its high intrinsic carrier concentration generally necessitates operation at cooled temperatures, higher speeds and the advantage of integrating other devices on-chip with the infrared detectors encourages the development of an active device technology on this semiconductor. Considering its small bandgap, the problems associated with good p-n junctions may favor the MISFET in this application. Surprisingly, little has been done toward this goal, though structures such as charge-coupled-devices, focal array detectors, and a few insulated gate FETs have been fabricated. In this paper the authors present the results of recent work toward the development of a fabrication technology for InSb MISFETs. Specifically, they have conducted a study of etchants, metal contacts, and dielectrics for application to mesa-structure, insulated gate field transistors

  3. Thermoelectricity in correlated narrow-gap semiconductors

    Science.gov (United States)

    Tomczak, Jan M.

    2018-05-01

    We review many-body effects, their microscopic origin, as well as their impact on thermoelectricity in correlated narrow-gap semiconductors. Members of this class—such as FeSi and FeSb2—display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie–Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators—such as Ce3Bi4Pt3 for which we present new results—and propose a general classification of paramagnetic insulators. From the latter, FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we explore new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.

  4. Andreev molecules in semiconductor nanowire double quantum dots.

    Science.gov (United States)

    Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

    2017-09-19

    Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

  5. Study of Cutting Edge Temperature and Cutting Force of End Mill Tool in High Speed Machining

    Directory of Open Access Journals (Sweden)

    Kiprawi Mohammad Ashaari

    2017-01-01

    Full Text Available A wear of cutting tools during machining process is unavoidable due to the presence of frictional forces during removing process of unwanted material of workpiece. It is unavoidable but can be controlled at slower rate if the cutting speed is fixed at certain point in order to achieve optimum cutting conditions. The wear of cutting tools is closely related with the thermal deformations that occurred between the frictional contact point of cutting edge of cutting tool and workpiece. This research paper is focused on determinations of relationship among cutting temperature, cutting speed, cutting forces and radial depth of cutting parameters. The cutting temperature is determined by using the Indium Arsenide (InAs and Indium Antimonide (InSb photocells to measure infrared radiation that are emitted from cutting tools and cutting forces is determined by using dynamometer. The high speed machining process is done by end milling the outer surface of carbon steel. The signal from the photocell is digitally visualized in the digital oscilloscope. Based on the results, the cutting temperature increased as the radial depth and cutting speed increased. The cutting forces increased when radial depth increased but decreased when cutting speed is increased. The setup for calibration and discussion of the experiment will be explained in this paper.

  6. The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology

    Directory of Open Access Journals (Sweden)

    Ramelan Ari Handono

    2017-01-01

    Full Text Available Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology

  7. Diamagnetic (cyclotron) resonance in semiconductors using strong magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Sosniak, J

    1962-07-01

    Diamagnetic (cyclotron) resonance experiments have been carried out in the semiconductors indium-antimonide (InSb), the indium-arsenide (InAs). Pulsed magnetic fields up to 300,000 gauss and monochromatic infrared radiation of 9 to 13.5 microns wavelength were used to measure the effective mass of the conduction electrons in those materials. The samples were n-type single crystals, with a room temperature electron concentration of 1.9 x 10{sup 16} and 6 x 10{sup 16} per cm{sup 3} in InSb and InAs respectively. Both the InSb and InAs samples showed a strong dependence of the effective mass on the magnetic field. The results show that the conduction bands in those solids are highly non-parabolic. Measurements were also made of the resonance absorption coefficients, which were found to be considerably smaller than the values obtained from simple theory. The effect is explained by assuming that the magnetic field reduces the intrinsic electron density, and that the absorption coefficient depends on the shape of the conduction band. It is postulated as a consequence that the relaxation time of diamagnetic energy levels at high magnetic fields does not differ appreciably from the relaxation time used in the description of conduction processes. (author)

  8. Study of the Local Environment of Mn Ions Implanted in GaSb

    International Nuclear Information System (INIS)

    Wolska, A.; Lawniczak-Jablonska, K.; Klepka, M.T.; Barcz, A.; Hallen, A.; Arvanitis, D.

    2010-01-01

    The first attempts to establish an implantation process leading to formation of ferromagnetic inclusions inside the GaSb matrix are presented. Gallium antimonide containing ferromagnetic MnSb precipitations is considered as a promising material for novel spintronic applications. It is possible to obtain such inclusions during the molecular beam epitaxy (MBE) growth. However, for commercial application it would be also important to find an optimal way of producing this kind of inclusions by Mn ions implantation. In order to achieve this goal, several parameters of implantation and post annealing procedures were tested. The ion energy was kept at 10 keV or 150 keV and four different ion doses were applied, as well as various annealing conditions. The analysis of X-ray absorption spectra allowed to estimate the local atomic order around Mn atoms. Depending on the implantation energy and annealing processes, the manganese oxides or manganese atoms located in a heavily defected GaSb matrix were observed. The performed analysis helped in indicating the main obstacles in formation of MnSb inclusions inside the GaSb matrix by Mn ion implantation. (author)

  9. Chemical and electrical properties of (NH4)2S passivated GaSb surface

    International Nuclear Information System (INIS)

    Tao Dongyan; Cheng Yu; Liu Jingming; Su Jie; Liu Tong; Yang Fengyun; Wang Fenghua; Cao Kewei; Dong Zhiyuan; Zhao Youwen

    2015-01-01

    The surface chemical properties of gallium antimonide (GaSb) after ammonium sulfide ((NH 4 ) 2 S) solution passivation have been studied by X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and I–V measurement. An advantage of neutral (NH 4 ) 2 S + S solution over pure (NH 4 ) 2 S solution and alkaline (NH 4 ) 2 S + S solution has been found in the ability to passivate the GaSb surface by contrast and comparison. It has been found that alkaline (NH 4 ) 2 S + S solution passivation effectively removes oxides of the GaSb surface and forms sulfide products to improve device performance. TOF-SIMS complementally demonstrates that pure (NH 4 ) 2 S passivation did form sulfide products, which are too soluble to really exist. The lowest roughness determined using a 3D optical profilometer and the highest improved SBD quality proved that neutral (NH 4 ) 2 S + S solution passivation worked much better in improving the surface properties of GaSb. (paper)

  10. Enhancement of thermoelectric efficiency of CoSb3-based skutterudites by double filling with K and Tl

    Directory of Open Access Journals (Sweden)

    Ken eKurosaki

    2014-10-01

    Full Text Available The high-temperature thermoelectric properties of thallium (Tl and potassium (K double-filled cobalt antimonide (CoSb3-based skutterudites with nominal compositions TlxK0.3Co4Sb12 (x = 0.1–0.3 were investigated. The filling fraction of Tl in CoSb3 was enhanced by co-filling with K, which resulted in all of the samples showing the filled-skutterudite single phase. Owing to the high filling ratio, the carrier concentration in the sample with x = 0.3 was as high as 4.3 × 1020 cm−3 at room temperature. Furthermore, quite low lattice thermal conductivity (as low as 0.9 W m−1 K−1 was obtained for the sample with x = 0.3, probably because of strong phonon scattering by the Tl and K co-rattling effect, which resulted in a maximum zT of around one at 773 K.

  11. Impacts of propagating, frustrated and surface modes on radiative, electrical and thermal losses in nanoscale-gap thermophotovoltaic power generators

    Science.gov (United States)

    Bernardi, Michael P.; Dupré, Olivier; Blandre, Etienne; Chapuis, Pierre-Olivier; Vaillon, Rodolphe; Francoeur, Mathieu

    2015-01-01

    The impacts of radiative, electrical and thermal losses on the performances of nanoscale-gap thermophotovoltaic (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten and a radiatively-optimized Drude radiator are analyzed. Results reveal that surface mode mediated nano-TPV power generation with the Drude radiator outperforms the tungsten radiator, dominated by frustrated modes, only for a vacuum gap thickness of 10 nm and if both electrical and thermal losses are neglected. The key limiting factors for the Drude- and tungsten-based devices are respectively the recombination of electron-hole pairs at the cell surface and thermalization of radiation with energy larger than the cell absorption bandgap. A design guideline is also proposed where a high energy cutoff above which radiation has a net negative effect on nano-TPV power output due to thermal losses is determined. It is shown that the power output of a tungsten-based device increases by 6.5% while the cell temperature decreases by 30 K when applying a high energy cutoff at 1.45 eV. This work demonstrates that design and optimization of nano-TPV devices must account for radiative, electrical and thermal losses. PMID:26112658

  12. Magnetic sensor for thermonuclear device

    International Nuclear Information System (INIS)

    Honda, Takuro; Abe, Mitsushi; Okazaki, Takashi.

    1996-01-01

    A magnetic sensor is constituted by using an element having a nernst effect. As the nernst element, a compound of metals such as silver and antimony, and compounds such as mercury telluride, mercury selenide and indium antimonide are used. Thermocouples for measuring the temperature of the surface of the nernst element are connected to both ends of the nernst element in one direction (x direction). A heating or cooling device is disposed for applying a predetermined temperature gradient in one direction of the element. The sensitivity of the element is controlled by changing the temperature gradient corresponding to the intensity of the magnetic fields. A signal line is connected in the direction (y direction) perpendicular to the x direction of the element for measuring potential difference. The signal line is connected to a signal processing device together with the signal line for measuring temperature. With such a constitution, magnetic fields under strong radiation rays and high thermal load can be measured for a long period of time. (I.N.)

  13. Local emission spectroscopy of surface micrograins in A{sup III}B{sup V} semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, N. D., E-mail: ndzhukov@rambler.ru; Gluhovskoy, E. G.; Mosiyash, D. S. [Saratov State University (Russian Federation)

    2016-07-15

    The density-of-states spectra and the parameters of levels of electron states in locally chosen surface micrograins of indium antimonide and arsenide and gallium arsenide are studied with a tunneling electron microscope in the field-emission mode of measurements. By correlating the current–voltage characteristics with the formula for the probability of emission via levels, the activation energies of the levels (ψ) and the lifetimes of electrons at the levels (τ) are determined. Two types of levels for electron localization are identified. These are levels in the micrograin bulk (ψ ≈ 0.75, 1.15, and 1.59 eV for n-InSb, n-InAs, and n-GaAs, respectively; τ ~ 10{sup –8}–10{sup –7} s) and in the surface region of an i-InSb micrograin (ψ ~ 0.73, 1.33, 1.85, 2.15, 5.1 eV; τ ≈ 5 × 10{sup –8}–3 × 10{sup –7} s). A physical model involving the Coulomb-interaction-induced localization of light electrons and their size quantization determined by the electron effective mass, energy, and concentration and by the surface curvature of the micrograin is proposed.

  14. Crystal, magnetic, calorimetric and electronic structure investigation of GdScGe1-x Sb x compounds

    Science.gov (United States)

    Guillou, F.; Pathak, A. K.; Hackett, T. A.; Paudyal, D.; Mudryk, Y.; Pecharsky, V. K.

    2017-12-01

    Experimental investigations of crystal structure, magnetism and heat capacity of compounds in the pseudoternary GdScGe-GdScSb system combined with density functional theory projections have been employed to clarify the interplay between the crystal structure and magnetism in this series of RTX materials (R  =  rare-earth, T   =  transition metal and X  =  p-block element). We demonstrate that the CeScSi-type structure adopted by GdScGe and CeFeSi-type structure adopted by GdScSb coexist over a limited range of compositions 0.65 ≤slant x ≤slant 0.9 . Antimony for Ge substitutions in GdScGe result in an anisotropic expansion of the unit cell of the parent that is most pronounced along the c axis. We believe that such expansion acts as the driving force for the instability of the double layer CeScSi-type structure of the parent germanide. Extensive, yet limited Sb substitutions 0 ≤slant x disappearance of the induced magnetic moments on Sc. For the parent antimonide, heat capacity measurements indicate an additional transition below the main antiferromagnetic transition.

  15. Characterization of Cs-Sb cathodes for high charge RF photoinjectors

    CERN Document Server

    AUTHOR|(CDS)2082505; Beghi, Marco

    Future accelerators such as CLIC (Compact LInear Collider), require high brightness electron beams that could be produced with a photoinjector (laser-driven electron source). Cs2Te photocathodes in combination with ultra-violet (UV) laser beams are currently used in many photoinjector facilities, but requirements to the electron sources for future accelerators like CLIC are more demanding. The main challenge for the CLIC drive beam photoinjector is to achieve high bunch charges (8.4 nC), high bunch repetition rates (500 MHz) within long trains (140 s) and with suciently long cathode lifetimes. In particular the laser pulse energy in UV, for such long pulse trains, is currently limited due to a degradation of the beam quality during the 4th harmonic frequency conversion process. Using the 2nd harmonic (green laser beam), provided it is matched with a low photoemission threshold photocathode material, would overcome this limitation. Cesium antimonide (Cs3Sb), being a photoemissive material in the visible range,...

  16. Achievements in the field of thermophysics of pniktides and chalcogenides of transition elements

    International Nuclear Information System (INIS)

    Westrum, E.F.

    1979-01-01

    Thermophysical aspects of thermodynamics of chalcogenides of transition metals are analyzed briefly with the aim of development of concepts on connection of these compounds entropy with their structure, expressed by Grenvold and Westrum in 1962. In a more detail way discussed are the achievement in the field of low-temperature thermophysics of pniktides of transition metals permitting to consider the similarity and the differences in properties of the two compound classes mentioned above. The characteristics of chalcogenides and pniktides, obtained by the method of low-temperature calorimetry and by the method of high-temperature adiabatic calorimetry as well, are considered. A more detail estimate is made of the heat capacity component caused by expansion (that is of the most importance while considering the high-temperature data on heat capacity). The effect of energy levels of ions and atoms on heat capacity and a number of other problems are also considered. The approach to solution of these problems is illustrated on experimental data for a number of compounds, such as marcasite (FeS 2 ), low-temperature digenite (Csub(1.80)S), CoFe 2 , arsenides and antimonides of a number of metals (FeSb 2 , CrSb 2 , CrAs 2 , U 2 As 4 , U 3 Sb 4 , USb 2 , UAs 2 )

  17. ATLAS TileCal submodule B-field measurement

    International Nuclear Information System (INIS)

    Budagov, Yu.A.; Fedorenko, S.B.; Kalinichenko, V.V.; Lomakin, Yu.F.; Vorozhtsov, S.B.; Nessi, M.

    1997-01-01

    The work was done to cross check of the previous measurement done at CERN and to simulate the magnetic structure in the vicinity of the symmetry plane of the TileCal. To perform magnetic measurements for submodule the magnet E2 was chosen. The magnetometer used in the magnetic test of the submodule consists of Hall current supply and Hall voltage measuring device. The indium antimonide Hall probe used in this measurement is a model PKhE 606. Experimental set-up provides a true measurement accuracy of order ± 1%. External magnetic field measurements were conducted at the outer surface of the submodule. Two levels of the external field were applied: 108 Gs and 400 Gs. The result of this measurement in general confirms the data, obtained at CERN, but the shielding capability of the submodule under consideration was ∼ 20% higher than there. The field at the tile location is < 150 Gs up to the external field level 500 Gs and the tile field grows much less than the external field level in this range. The data obtained in this measurement could be used as a benchmark when producing a computer model of the TileCal magnetic field distribution

  18. The inverse perovskite nitrides (Sr{sub 3}N{sub 2/3-x})Sn, (Sr{sub 3}N{sub 2/3-x})Pb, and (Sr{sub 3}N)Sb. Flux crystal growth, crystal structures, and physical properties

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Manisha; Bobnar, Matej; Ormeci, Alim; Prots, Yurii; Hoehn, Peter [Chemische Metallkunde, Max-Planck-Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Stoiber, Dominik; Niewa, Rainer [Institut fuer Anorganische Chemie, Universitaet Stuttgart (Germany)

    2018-02-15

    Black single crystals with metallic luster of (Sr{sub 3}N{sub 2/3-x})E (E = Sn, Pb) and (Sr{sub 3}N)Sb were grown in lithium flux from strontium nitride, Sr{sub 2}N, and tin, lead, or antimony, respectively. Nitrogen deficiency in the tin and the lead compound is a result of the higher ionic charge of the tetrelide ions E{sup 4-} as compared to the antimonide ion Sb{sup 3-}. In contrast to microcrystalline samples from solid state sinter reactions obtained earlier, the flux synthesis induces nitrogen order in the nitrogen deficient tetrelides. The antimony compound crystallizes as inverse cubic perovskite [a = 517.22(5) pm, Z = 1, space group Pm3m, no. 221] with fully occupied nitrogen site, whereas the nitrogen deficient tin and lead compounds exhibit partially ordered arrangements and a certain phase width in respect to nitrogen contents. For the tetrelides, the nitrogen order leads to a cubic 2 x 2 x 2 superstructure [E = Sn: a = 1045.64(8) pm for x = 0, a = 1047.08(7) pm for x = 0.08; and E = Pb: a = 1050.7(1) pm for x = 0, space group Fm3m, no. 225] as derived from single-crystal X-ray diffraction data. The metallic tetrelides show diamagnetic behavior, which is consistent with electronic structure calculations. (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Photoconduction spectroscopy of p-type GaSb films

    International Nuclear Information System (INIS)

    Shura, M.W.; Wagener, V.; Botha, J.R.; Wagener, M.C.

    2012-01-01

    Excess carrier lifetimes (77 K) have been measured as function of the absorbed flux density in undoped p-type gallium antimonide films (GaSb/GaAs) using steady state photoconductivity measurements with the illumination wavelength of 1.1 μm. Using the results from Hall effect measurements along with the relations describing the lifetimes of the excess minority carriers in the bulk of the films and at the surface, the theoretical values of the effective excess carrier lifetime in the materials were also calculated. Discrepancies between the experimental and theoretical results were described using a two-layer model, by considering the variation in the charge distribution within the layer due to the presence of surface states, as well as the band offset between the layer and the substrate. Theoretical modeling of the experimental result yields values of different parameters such as band bending at the surface, minimum value of Shockley–Read–Hall lifetime and maximum value of the surface recombination velocity.

  20. Behavior of GaSb (100) and InSb (100) surfaces in the presence of H{sub 2}O{sub 2} in acidic and basic cleaning solutions

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Dongwan; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo, E-mail: swlim@yonsei.ac.kr

    2017-03-31

    Highlights: • Surface behavior of GaSb and InSb was investigated in acidic and basic solutions. • H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic hydrochloric acid/hydrogen peroxide mixture (HPM) solution. • GaSb and InSb surfaces were hardly oxidized in basic ammonium hydroxide/hydrogen peroxide mixture (APM) solution in the presence of H{sub 2}O{sub 2}. • The effect of dilution of APM solution on the oxidation of the InSb surface was minimal. • Surface characteristics of GaSb and InSb in HPM and APM solutions are mainly determined by the behaviors of the group III elements rather than the group V element. - Abstract: Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III–V compound semiconductors. In this study, the surface behavior of GaSb (100) and InSb (100) was investigated and compared in hydrochloric acid/hydrogen peroxide mixture (HPM) and ammonium hydroxide/hydrogen peroxide mixture (APM) solutions. In the acidic HPM solution, surface oxidation was greater and the etching rates of the GaSb and InSb surfaces increased when the solution is concentrated, which indicates that H{sub 2}O{sub 2} plays a key role in the surface oxidation of GaSb and InSb in acidic HPM solution. However, the GaSb and InSb surfaces were hardly oxidized in basic APM solution in the presence of H{sub 2}O{sub 2} because gallium and indium are in the thermodynamically stable forms of H{sub 2}GaO{sub 3}{sup −} and InO{sub 2}{sup −}, respectively. When the APM solution was diluted, however, the Ga on the GaSb surface was oxidized by H{sub 2}O, increasing the etching rate. However, the effect of dilution of the APM solution on the oxidation of the InSb surface was minimal; thus, the InSb surface was less oxidized than the GaSb surface and the change in the etching rate of In

  1. Segregation of antimony in InP in MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Weeke, Stefan

    2008-07-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  2. Segregation of antimony in InP in MOVPE

    International Nuclear Information System (INIS)

    Weeke, Stefan

    2008-01-01

    In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

  3. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Energy Technology Data Exchange (ETDEWEB)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U., E-mail: usha.philipose@unt.edu [University of North Texas, Department of Physics (United States)

    2016-12-15

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between Sb{sub 2}S{sub 3} and In and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40–60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 10{sup 17} cm{sup −3} and 1000 cm{sup 2} V{sup −1} s{sup −1}, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  4. Effect of intense laser irradiation on the lattice stability of InSb

    Energy Technology Data Exchange (ETDEWEB)

    Wang, M.M.; Gao, T.; Yu, Y. [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Zeng, X.W. [School of Civil Engineering and Transportation, South China University of Technology, Guangzhou, Guangdong 510640 (China)

    2012-01-15

    Indium Antimonide (InSb) has been used in semi-conductor detectors, so investigating the structural, electronic and lattice dynamical properties of InSb is of considerable practical interest. We have performed an ab initio study of electronic and dynamical properties of the zinc-blende InSb at different electronic temperatures. The calculations have been carried out within the density-functional theory and linear-response formalism using norm-conserving pseudopotentials and a plane-wave basis. The calculated direct band gap is seen to be 0.1 eV, which is underestimated with the experimental value of 0.18 eV. As the electronic temperature increases, the results indicate that the InSb undergoes a melting transition to a metallic state. The transverse acoustic modes of the InSb are found to be negative in the most part of the Brillouin zone (BZ) which leads to lattice dynamical instability at electronic temperature of 0.75 eV as indicated by imaginary phonon frequencies. Moreover, for optical modes, there exists a LO-TO (Longitudinal Optical and Transverse Optical) splitting at the zone-center ({Gamma} point) when T{sub e} = 0 eV and the frequencies are LO = 190.5 cm{sup -1}, TO = 182.4 cm{sup -1}, respectively; however, the LO-TO splitting will disappear when T{sub e} > 0 eV. The calculated values are in reasonable agreement with available experimental and theoretical data. (authors)

  5. Quantized Majorana conductance

    Science.gov (United States)

    Zhang, Hao; Liu, Chun-Xiao; Gazibegovic, Sasa; Xu, Di; Logan, John A.; Wang, Guanzhong; van Loo, Nick; Bommer, Jouri D. S.; de Moor, Michiel W. A.; Car, Diana; Op Het Veld, Roy L. M.; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Pendharkar, Mihir; Pennachio, Daniel J.; Shojaei, Borzoyeh; Lee, Joon Sue; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.; Sarma, S. Das; Kouwenhoven, Leo P.

    2018-04-01

    Majorana zero-modes—a type of localized quasiparticle—hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool for identifying the presence of Majorana zero-modes, for instance as a zero-bias peak in differential conductance. The height of the Majorana zero-bias peak is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature (where e is the charge of an electron and h is the Planck constant), as a direct consequence of the famous Majorana symmetry in which a particle is its own antiparticle. The Majorana symmetry protects the quantization against disorder, interactions and variations in the tunnel coupling. Previous experiments, however, have mostly shown zero-bias peaks much smaller than 2e2/h, with a recent observation of a peak height close to 2e2/h. Here we report a quantized conductance plateau at 2e2/h in the zero-bias conductance measured in indium antimonide semiconductor nanowires covered with an aluminium superconducting shell. The height of our zero-bias peak remains constant despite changing parameters such as the magnetic field and tunnel coupling, indicating that it is a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins by investigating its robustness to electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of Majorana zero-modes in the system, consequently paving the way for future braiding experiments that could lead to topological quantum computing.

  6. Ternary rare-earth bismuthides RE5SiBi 2 and RE5GeBi 2 ( RE=La-Nd, Gd-Er): Stabilization of the β-Yb 5Sb 3-type structure through tetrel substitution

    Science.gov (United States)

    Barry, Stephen D.; Tkachuk, Andriy V.; Bie, Haiying; Blanchard, Peter E. R.; Mar, Arthur

    2011-01-01

    Ternary bismuthides RE5TtBi 2 containing rare-earth ( RE=La-Nd, Gd-Er) and tetrel ( Tt=Si, Ge) atoms have been prepared by arc-melting of the elements followed by annealing at 800 °C. They adopt the β-Yb 5Sb 3-type structure (Pearson symbol o P32, space group Pnma, Z=4), as revealed through analysis by single-crystal X-ray diffraction on Ce 5Si 0.869(4)Bi 2.131(4) and powder X-ray diffraction on Ce 5GeBi 2. Cell parameters for the entire series lie in the ranges of a=12.8-11.8 Å, b=9.6-9.0 Å, and c=8.4-7.9 Å. Solid solubility in Ce 5Si xBi 3- x and Pr 5Si xBi 3- x (approximately 0.9≤ x≤1.2, depending on the RE member) is much more limited compared to the antimonides, consistent with a highly ordered structure in which the two possible anion sites are essentially segregated into a smaller one occupied by Tt atoms (CN7) and a larger one occupied by Bi atoms (CN9). Band structure calculations on La 5SiBi 2 confirm the importance of La-La bonding interactions near the Fermi level. X-ray photoelectron spectra support the presence of partially anionic Bi atoms, as indicated by a small negative binding energy shift relative to elemental Bi. The Ce and Pr members undergo magnetic transitions at low temperatures, possibly involving ferromagnetic interactions, that are strongly influenced by the nature of the Tt atom.

  7. Ternary rare-earth bismuthides RE5SiBi2 and RE5GeBi2 (RE=La-Nd, Gd-Er): Stabilization of the β-Yb5Sb3-type structure through tetrel substitution

    International Nuclear Information System (INIS)

    Barry, Stephen D.; Tkachuk, Andriy V.; Bie, Haiying; Blanchard, Peter E.R.; Mar, Arthur

    2011-01-01

    Ternary bismuthides RE 5 TtBi 2 containing rare-earth (RE=La-Nd, Gd-Er) and tetrel (Tt=Si, Ge) atoms have been prepared by arc-melting of the elements followed by annealing at 800 o C. They adopt the β-Yb 5 Sb 3 -type structure (Pearson symbol oP32, space group Pnma, Z=4), as revealed through analysis by single-crystal X-ray diffraction on Ce 5 Si 0.869(4) Bi 2.131(4) and powder X-ray diffraction on Ce 5 GeBi 2 . Cell parameters for the entire series lie in the ranges of a=12.8-11.8 A, b=9.6-9.0 A, and c=8.4-7.9 A. Solid solubility in Ce 5 Si x Bi 3-x and Pr 5 Si x Bi 3-x (approximately 0.9≤x≤1.2, depending on the RE member) is much more limited compared to the antimonides, consistent with a highly ordered structure in which the two possible anion sites are essentially segregated into a smaller one occupied by Tt atoms (CN7) and a larger one occupied by Bi atoms (CN9). Band structure calculations on La 5 SiBi 2 confirm the importance of La-La bonding interactions near the Fermi level. X-ray photoelectron spectra support the presence of partially anionic Bi atoms, as indicated by a small negative binding energy shift relative to elemental Bi. The Ce and Pr members undergo magnetic transitions at low temperatures, possibly involving ferromagnetic interactions, that are strongly influenced by the nature of the Tt atom. -- Graphical Abstract: Tetrel (Si or Ge) and Bi atoms are arranged in an ordered manner in the β-Yb 5 Sb 3 -type structure adopted by RE 5 TtBi 2 . Display Omitted

  8. Investigation of electro-optical properties of InSb under the influence of spin-orbit interaction at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hilal, Muhammad; Rashid, Bahroz; Khan, Shah Haider; Khan, Afzal, E-mail: afzal_khan@upesh.edu.pk

    2016-12-01

    To investigate the electro-optical properties of indium antimonide (InSb) for photo-voltaic applications, we performed first principles calculations using density functional theory (DFT). Our DFT calculations are based on full potential linearized augmented plane wave (FP-LAPW) method implemented by WIEN2K code. These calculations are carried out using generalized gradient approximation (GGA) and Tran Blaha modified Becke Johnson (TB-mBJ) approximation for exchange co-relation potential. All the calculations are performed with and without the addition of spin-orbit interaction (SOI) to GGA and TB-mBJ potentials. Addition of SOI gives the results very close to their experimental values and makes the calculations independent of k-points consideration. All the results are calculated by considering the temperature as high as 300 K. To the best of our knowledge, all the previously published theoretical results were calculated at 0 K and no such results have been reported at 300 K. In this article, we are reporting band structure, density of states (DOS) and the band gap dependent optical properties of InSb. The calculated direct band gap is 0.17 eV, refractive index is 3.79 and extinction coefficient as 3.22. - Highlights: • Room temperature calculations of electro-optical properties of InSb. • Effect of SOI on the band structure and critical points. • The addition of SOI made the calculation k-points independent. • Optical properties were calculated without broadening or applying scissor potential.

  9. Synthesis and structural characterization of the Zintl phases Na{sub 3}Ca{sub 3}TrPn{sub 4}, Na{sub 3}Sr{sub 3}TrPn{sub 4}, and Na{sub 3}Eu{sub 3}TrPn{sub 4} (Tr=Al, Ga, In; Pn=P, As, Sb)

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); Suen, Nian-Tzu [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002 (China); Kunene, Thabiso; Stoyko, Stanislav [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry & Biochemistry, University of Delaware, 304A Drake Hall, Newark, DE 19716 (United States)

    2017-05-15

    15 new quaternary Zintl phases have been synthesized by solid-state reactions from the respective elements, and their structures have been determined by single-crystal X-ray diffraction. Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) crystallize in the hexagonal crystal system with the non-centrosymmetric space group P6{sub 3}mc (No. 186). The structure represents a variant of the K{sub 6}HgS{sub 4} structure type (Pearson index hP22) and features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. The nominal formula rationalization [Na{sup +}]{sub 3}[E{sup 2+}]{sub 3}[TrPn{sub 4}]{sup 9–} follows the octet rule, suggesting closed-shell configurations for all atoms and intrinsic semiconducting behavior. However, structure refinements for several members hint at disorder and mixing of cations that potentially counteract the optimal valence electron count. - Graphical abstract: The hexagonal, non-centrosymmetric structure of Na{sub 3}E{sub 3}TrPn{sub 4} (E=Ca, Sr, Eu; Tr=Al, Ga, In; Pn=P, As, Sb) features [TrPn{sub 4}]{sup 9–} tetrahedral units, surrounded by Na{sup +} and Ca{sup 2+}, Sr{sup 2+}, Eu{sup 2+} cations. - Highlights: • 15 quaternary phosphides, arsenides, and antimonides are synthesized and structurally characterized. • The structure is a variant of the hexagonal K{sub 6}HgS{sub 4}-type, with distinctive pattern for the cations. • Occupational and/or positional disorder of yet unknown origin exists for some members of the series.

  10. InAs/GaSb type-II superlattice infrared detectors: three decades of development

    Science.gov (United States)

    Rogalski, A.; Kopytko, M.; Martyniuk, P.

    2017-02-01

    Recently, there has been considerable progress towards III-V antimonide-based low dimensional solids development and device design innovations. From a physics point of view, the type-II InAs/GaSb superlattice is an extremely attractive proposition. Their development results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe FPAs at reasonable cost and theoretical predictions of lower Auger recombination for type-II superlattice (T2SL) detectors compared to HgCdTe. Lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall lifetime are equal. Based on these promising results it is obvious now that the InAs/GaSb superlattice technology is competing with HgCdTe third generation detector technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing. Comments to the statement whether the superlattice IR photodetectors can outperform the "bulk" narrow gap HgCdTe detectors is one of the most important questions for the future of IR photodetectors presented by Rogalski at the April 2006 SPIE meeting in Orlando, Florida, are more credible today and are presented in this paper. It concerns the trade-offs between two most competing IR material technologies: InAs/GaSb type-II superlattices and HgCdTe ternary alloy system.

  11. Laser ignition of DAAF, DHT and DAATO{sub 3.5}

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Arif N.; Sandstrom, Mary M.; Oschwald, David M.; Moore, Kevin M.; Son, Steven F. [Los Alamos National Laboratory, Los Alamos, NM 87544 (United States)

    2005-10-01

    CO{sub 2} laser ignition experimental results are reported for the high-nitrogen materials 3,6-dihydrazino-1,2,4,5-tetrazine (DHT), 3,3'-diamino-4,4'-azoxyfurazan (DAAF), and mixed N-oxides of 3,3'-azo-bis(6-amino-1,2,4,5-tetrazine) (DAATO{sub 3.5}, where the ''3.5'' indicates the average oxide content) at a maximum irradiance level of approximately 140 W/cm{sup 2}. Diagnostics include a photodiode, indium antimonide (InSb) IR detector, high speed (HS) video and a CO{sub 2} photodetector. ''First light'' is measured for DAATO{sub 3.5} and DAAF, however, due to the low visible light emission of the gas phase, thermal runaway, as measured by the InSb, is used as the ignition criterion for DHT. Ignition in the gas phase is captured by the high speed camera. It is observed that an increase in laser irradiance results in an increase in ignition and flame stand-off distance for DAATO{sub 3.5}. The high-nitrogen material laser ignition results are compared to the common nitramine explosive, octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine (HMX). Laser ignition delays for the different high-nitrogen materials are also compared in the context of Differential Scanning Calorimetry (DSC) data. It is determined that DSC onset temperature, while a rough indicator of ignition delay trends, is not the equivalent of a direct measure of ignition temperature. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  12. Power and hydrogen production from ammonia in a micro-thermophotovoltaic device integrated with a micro-reformer

    International Nuclear Information System (INIS)

    Um, Dong Hyun; Kim, Tae Young; Kwon, Oh Chae

    2014-01-01

    Power and hydrogen (H 2 ) production by burning and reforming ammonia (NH 3 ) in a micro-TPV (microscale-thermophotovoltaic) device integrated with a micro-reformer is studied experimentally. A heat-recirculating micro-emitter with the cyclone and helical adapters that enhance the residence time of fed fuel-air mixtures and uniform burning burns H 2 -added NH 3 -air mixtures. A micro-reformer that converts NH 3 to H 2 using ruthenium as a catalyst surrounds the micro-emitter as a heat source. The micro-reformer is surrounded by a chamber, the inner and outer walls of which have installations of gallium antimonide photovoltaic cells and cooling fins. For the micro-reformer-integrated micro-TPV device the maximum overall efficiency of 8.1% with electrical power of 4.5 W and the maximum NH 3 conversion rate of 96.0% with the H 2 production rate of 22.6 W (based on lower heating value) are obtained, indicating that the overall efficiency is remarkably enhanced compared with 2.0% when the micro-TPV device operates alone. This supports the potential of improving the overall efficiency of a micro-TPV device through integrating it with a micro-reformer. Also, the feasibility of using NH 3 as a carbon-free fuel for both burning and reforming in practical micro power and H 2 generation devices has been demonstrated. - Highlights: • Performance of micro-TPV device integrated with micro-reformer is evaluated. • Feasibility of using NH 3 –H 2 blends in integrated system has been demonstrated. • Integration with micro-reformer improves performance of micro-TPV device. • Maximum overall efficiency of 8.1% is found compared with 2.0% without integration

  13. Hole-dominated transport in InSb nanowires grown on high-quality InSb films

    Science.gov (United States)

    Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

    2016-12-01

    We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

  14. Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

    Science.gov (United States)

    Cardelino, B. H.; Moore, C. E.; Cardelino, C. A.; Frazier, D. O.; Backmann, K. J.

    2000-01-01

    The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

  15. Detached phenomenon: Its effect on the crystal quality of Ga{sub (1−x)}In{sub x}Sb bulk crystal grown by the VDS technique

    Energy Technology Data Exchange (ETDEWEB)

    Gadkari, Dattatray, E-mail: db.gadkari@gmail.com [Department of Physics, Mithibai College, Mumbai 400056 (India)

    2013-05-15

    Vertical directional solidification (VDS) technique is used on the combined growth principals of the conventional methods since 1994, which leads to the detached growth. For evaluation of the detached growth, five bulk ingots of indium doped gallium–antimonide GaSb:In (In = 0.5, 0.25, 0.15) have been grown – without the seed, without contact to the ampoule wall, without coating and without external pressure. The gap is attributed to compensate the differential thermal dilatation that is grown with the reduced diameter than the diameter of the ampoule. VDS experiments have been proved that the sum of the contact angle and growth angle is large enough to allow detachment without any additional pressure difference under the melt to offset hydrostatic pressure. A meniscus forms at the bottom of the melt, the capillarity effect establishes due to which spontaneous gap could be created by the melt free surface, thus no thermal shear stress and thermo-mechanical stresses at the interface. Detached grown bulk GaSb:In crystals showed superior crystal quality with the highest physical properties and mobility than the crystals grown ever. The axial and radial composition profile of the grown GaSb:In ingots showed variation ≤10%. From the conical region, dislocation density decreases in the growth direction and reaches less than 10{sup 3} cm{sup −2}. - Highlights: ► Detachment: without seed, without ampoule contact, without coating, without external pressure. ► Detached ingot growth samples showed the highest physical properties and the carrier mobility. ► Initial to final transition: in detached growth, dislocations decreases and less than 10{sup 3} cm{sup −2}. ► Detached samples: Raman spectrum shows only TO phonon (110) direction of single orientation. ► Detached ingot: FTIR shows highest transmissions % but decreases on increase doping in samples.

  16. Degradation of Alkali-Based Photocathodes from Exposure to Residual Gases: A First-Principles Study

    International Nuclear Information System (INIS)

    Wang, Gaoxue; Batista, Enrique R.

    2017-01-01

    Photocathodes are a key component in the production of electron beams in systems such as X-ray free-electron lasers and X-ray energy-recovery linacs. Alkali-based materials display high quantum efficiency (QE), however, their QE undergoes degradation faster than metal photocathodes even in the high vacuum conditions where they operate. The high reactivity of alkali-based surfaces points to surface reactions with residual gases as one of the most important factors for the degradation of QE. In order to advance the understanding on the degradation of the QE, we investigated the surface reactivity of common residual gas molecules (e.g., O 2 , CO 2 , CO, H 2 O, N 2 , and H 2 ) on one of the best-known alkali-based photocathode materials, cesium antimonide (Cs 3 Sb), using first-principles calculations based on density functional theory. Furthermore, the reaction sites, adsorption energy, and effect in the local electronic structure upon reaction of these molecules on (001), (110), and (111) surfaces of Cs 3 Sb were computed and analyzed. The adsorption energy of these molecules on Cs3Sb follows the trend of O 2 (-4.5 eV) > CO 2 (-1.9 eV) > H 2 O (-1.0 eV) > CO (-0.8 eV) > N 2 (-0.3 eV) ≈ H 2 (-0.2 eV), which agrees with experimental data on the effect of these gases on the degradation of QE. The interaction strength is determined by the charge transfer from the surfaces to the molecules. The adsorption and dissociation of O containing molecules modify the surface chemistry such as the composition, structure, charge distribution, surface dipole, and work function of Cs 3 Sb, resulting in the degradation of QE with exposure to O 2 , CO 2 , H 2 O, and CO.

  17. Time-resolved X-ray diffraction with accelerator- and laser-plasma-based X-ray sources

    International Nuclear Information System (INIS)

    Nicoul, Matthieu

    2010-01-01

    Femtosecond X-ray pulses are a powerful tool to investigate atomic motions triggered by femtosecond pump pulses. This thesis is dedicated to the production of such pulses and their use in optical pump - X-ray probe measurement. This thesis describes the laser-plasma-based sources available at the University of Duisburg-Essen. Part of it consists of the description of the design, built-up and characterization of a new ''modular'' X-ray source dedicated to optimize the X-ray flux onto the sample under investigation. The acoustic wave generation in femtosecond optically excited semiconductor (gallium arsenide) and metal (gold) was performed using the sources of the University of Duisburg-Essen. The physical answer of the material was modeled by a simple strain model for the semiconductor, pressure model for the metal, in order to gain information on the interplay of the electronic and thermal pressures rising after excitation. Whereas no reliable information could be obtain in gallium arsenide (principally due to the use of a bulk), the model for gold achieved very good agreement, providing useful information. The relaxation time of the electron to lattice energy was found to be (5.0±0.3) ps, and the ratio of the Grueneisen parameters was found to be γ e / γ i = (0.5±0.1). This thesis also describes the Sub-Picosecond Pulse Source (SPPS) which existed at the (formally) Stanford Linear Accelerator Center, an accelerator-based X-ray source, and two measurements performed with it. The first one is the detailed investigation of the phonon softening of the A 1g mode launch in bismuth upon fluence excitation. Detailed information concerning the new equilibrium position and phonon frequency were obtained over extended laser pump fluences. The second measurement concerned the study of the liquid phase dynamics in a newly formed liquid phase following ultrafast melting in indium antimonide. The formation of the liquid phase and its development for excitations close to the

  18. High-speed Imaging of Global Surface Temperature Distributions on Hypersonic Ballistic-Range Projectiles

    Science.gov (United States)

    Wilder, Michael C.; Reda, Daniel C.

    2004-01-01

    times as short as 2 ns. The infrared camera uses an Indium Antimonide (InSb) sensor in the 3 to 5 micron band and is capable of integration times as short as 500 ns. The projectiles are imaged nearly head-on using expendable mirrors offset slightly from the flight path. The proposed paper will discuss the application of high-speed digital imaging systems in the NASA-Ames hypersonic ballistic range, and the challenges encountered when applying these systems. Example images of the thermal radiation from the blunt nose of projectiles flying at nearly 14 times the speed of sound will be given.

  19. Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Huffaker, Diana [Univ. of California, Los Angeles, CA (United States); Hubbard, Seth [Rochester Inst. of Technology, NY (United States); Norman, Andrew [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2015-07-31

    This project aimed to develop solar cells that can help reduce cost per watt. This work focused on developing solar cells that utilize quantum dot (QD) nanomaterials to provide multijunction solar cell efficiency at the cost of single junction solar cell. We focused on a novel concept known as intermediate band solar cells (IBSC) where an additional energy band is inserted in a single solar cell to accommodate sub-bandgap photons absorption which otherwise are lost through transmission. The additional energy band can be achieved by growing QDs within a solar cell p-n junction. Though numerous studies have been conducted to develop such QD systems, very small improvements in solar energy conversion efficiency have been reported. This is mainly due to non-optimal material parameters such as band gap, band offset etc. In this work, we identified and developed a novel QD material system that meets the requirements of IBSC more closely than the current state-of-the-art technology. To achieve these goals, we focused on three important areas of solar cell design: band structure calculations of new materials, efficient device design for high efficiency, and development of new semiconductor materials. In this project, we focused on III-Sb materials as they possess a wide range of energy bandgaps from 0.2 eV to 2eV. Despite the difficulty involved in realizing these materials, we were successfully developed these materials through a systematic approach. Materials studied in this work are AlAsSb (Aluminum Arsenide Antimonide), InAlAs (Indium Aluminum Arsenide) and InAs (Indium Arsenide). InAs was used to develop QD layers within AlAsSb and InAlAs p-n junctions. As the QDs have very small volume, up to 30 QD layers been inserted into the p-n junction to enhance light absorption. These QD multi-stack devices helped in understanding the challenges associated with the development of quantum dot solar cells. The results from this work show that the quantum dot solar cells indeed

  20. Cubic rare-earth compounds: variants of the three-state Potts model

    International Nuclear Information System (INIS)

    Kim, D.; Levy, P.M.; Uffer, L.F.

    1975-01-01

    In appropriate cubic fields, rare-earth ions have sixfold degenerate ground states. When the angular momentum of the rare earth is large, the six levels are characterized by states that are directed along the cube edges. Within these states the angular momentum operators J/sub x/, J/sub y/, and J/sub z/ have particularly simple matrix representations. The projection of an isotropic pair coupling between the rare earths onto these sixfold degenerate states leads to an interaction Hamiltonian H = -I Σ/sub (ij)/ sigma/sub i/sigma/sub j/delta/sub l/sub i/sub l/sub j//, where sigma takes on the values +-1 and l the values x, y, and z. This interaction is a variant of the three-state Potts model. Magnetic and quadrupolar anisotropy field terms are added to the Hamiltonian and the symmetry properties of the phase diagram associated with this model are determined. For nonzero quadrupolar anisotropy fields, the model is shown to have the thermodynamic behavior of an Ising model. However, for zero fields a new symmetry appears and in the mean-field approximation the model has tricritical-like exponents. This simple model is able to account for the large specific-heat critical exponent α' = 1 / 2 which has been observed for holmium antimonide in zero external fields. To the extent that the mean-field approximation is an accurate guide, we predict there are many cubic rare-earth compounds which exhibit tricritical-like behavior in zero field. In addition, for pure quadrupole coupling between rare earths in the sixfold degenerate states, the interaction Hamiltonian is exactly the three-state Potts model. In the mean-field approximation this system has a first-order phase transition. However, a small quadrupolar anisotropy field is sufficient to drive the system to a wing critical point. The specific heat has a critical exponent of α = 2 / 3 or 1 depending on the path taken to approach this critical point. (auth)

  1. Photophysical Properties of Novel Organic, Inorganic, and Hybrid Semiconductor Materials

    Science.gov (United States)

    Chang, Angela Yenchi

    For the past 200 years, novel materials have driven technological progress, and going forward these advanced materials will continue to deeply impact virtually all major industrial sectors. Therefore, it is vital to perform basic and applied research on novel materials in order to develop new technologies for the future. This dissertation describes the results of photophysical studies on three novel materials with electronic and optoelectronic applications, namely organic small molecules DTDCTB with C60 and C70, colloidal indium antimonide (InSb) nanocrystals, and an organic-inorganic hybrid perovskite with the composition CH3NH3PbI 3-xClx, using transient absorption (TA) and photoluminescence (PL) spectroscopy. In chapter 2, we characterize the timescale and efficiency of charge separation and recombination in thin film blends comprising DTDCTB, a narrow-band gap electron donor, and either C60 or C70 as an electron acceptor. TA and time-resolved PL studies show correlated, sub-picosecond charge separation times and multiple timescales of charge recombination. Our results indicate that some donors fail to charge separate in donor-acceptor mixed films, which suggests material manipulations may improve device efficiency. Chapter 3 describes electron-hole pair dynamics in strongly quantum-confined, colloidal InSb nanocrystal quantum dots. For all samples, TA shows a bleach feature that, for several picoseconds, dramatically red-shifts prior to reaching a time-independent position. We suggest this unusual red-shift relates transient population flow through two energetically comparable conduction band states. From pump-power-dependent measurements, we also determine biexciton lifetimes. In chapter 4, we examine carrier dynamics in polycrystalline methylammonium lead mixed halide perovskite (CH3NH3PbI3-xCl x) thin films as functions of temperature and photoexcitation wavelength. At room temperature, the long-lived TA signals stand in contrast to PL dynamics, where the

  2. Time-resolved X-ray diffraction with accelerator- and laser-plasma-based X-ray sources

    Energy Technology Data Exchange (ETDEWEB)

    Nicoul, Matthieu

    2010-09-01

    Femtosecond X-ray pulses are a powerful tool to investigate atomic motions triggered by femtosecond pump pulses. This thesis is dedicated to the production of such pulses and their use in optical pump - X-ray probe measurement. This thesis describes the laser-plasma-based sources available at the University of Duisburg-Essen. Part of it consists of the description of the design, built-up and characterization of a new ''modular'' X-ray source dedicated to optimize the X-ray flux onto the sample under investigation. The acoustic wave generation in femtosecond optically excited semiconductor (gallium arsenide) and metal (gold) was performed using the sources of the University of Duisburg-Essen. The physical answer of the material was modeled by a simple strain model for the semiconductor, pressure model for the metal, in order to gain information on the interplay of the electronic and thermal pressures rising after excitation. Whereas no reliable information could be obtain in gallium arsenide (principally due to the use of a bulk), the model for gold achieved very good agreement, providing useful information. The relaxation time of the electron to lattice energy was found to be (5.0{+-}0.3) ps, and the ratio of the Grueneisen parameters was found to be {gamma}{sub e} / {gamma}{sub i} = (0.5{+-}0.1). This thesis also describes the Sub-Picosecond Pulse Source (SPPS) which existed at the (formally) Stanford Linear Accelerator Center, an accelerator-based X-ray source, and two measurements performed with it. The first one is the detailed investigation of the phonon softening of the A{sub 1g} mode launch in bismuth upon fluence excitation. Detailed information concerning the new equilibrium position and phonon frequency were obtained over extended laser pump fluences. The second measurement concerned the study of the liquid phase dynamics in a newly formed liquid phase following ultrafast melting in indium antimonide. The formation of the liquid phase

  3. Materials growth and characterization of thermoelectric and resistive switching devices

    Science.gov (United States)

    Norris, Kate J.

    erbium monoantimonide (ErSb) thin films with thermal conductivities close to or slightly smaller than the alloy limit of the two ternary alloy hosts. Second we consider an ex-situ monitoring technique based on glancing-angle infrared-absorption used to determine small amounts of erbium antimonide (ErSb) deposited on an indium antimonide (InSb) layer, a concept for thermoelectric devices to scatter phonons. Thirdly we begin our discussion of nanowires with the selective area growth (SAG) of single crystalline indium phosphide (InP) nanopillars on an array of template segments composed of a stack of gold and amorphous silicon. Our approach enables flexible and scalable nanofabrication using industrially proven tools and a wide range of semiconductors on various non-semiconductor substrates. Then we examine the use of graphene to promote the growth of nanowire networks on flexible copper foil leading to the testing of nanowire network devices for thermoelectric applications and the concept of multi-stage devices. We present the ability to tailor current-voltage characteristics to fit a desired application of thermoelectric devices by using nanowire networks as building blocks that can be stacked vertically or laterally. Furthermore, in the study of our flexible nanowire network multi-stage devices, we discovered the presence of nonlinear current-voltage characteristics and discuss how this feature could be utilized to increase efficiency for thermoelectric devices. This work indicates that with sufficient volume and optimized doping, flexible nanowire networks could be a low cost semiconductor solution to our wasted heat challenge. Resistive switching devices are two terminal electrical resistance switches that retain a state of internal resistance based on the history of applied voltage and current. The occurrence of reversible resistance switching has been widely studied in a variety of material systems for applications including nonvolatile memory, logic circuits, and

  4. As, Bi, Hg, S, Sb, Sn and Te geochemistry of the J-M Reef, Stillwater Complex, Montana: constraints on the origin of PGE-enriched sulfides in layered intrusions

    Science.gov (United States)

    Zientek, M.L.; Fries, T.L.; Vian, R.W.

    1990-01-01

    The J-M Reef is an interval of disseminated sulfides in the Lower Banded series of the Stillwater Complex that is enriched in the platinum group elements (PGE). Palladium and Pt occur in solid solution in base-metal sulfides and as discrete PGE minerals. PGE minerals include sulfides, tellurides, arsenides, antimonides, bismuthides, and alloys with Fe, Sn, Hg, and Au. Several subpopulations can be delineated based on whole-rock chemical analyses for As, Bi, Cu, Hg, Pd, Pt, S, Sb and Te for samples collected from and adjacent to the J-M Reef. In general, samples from within the reef have higher Pt/Cu, Pd/Cu, Pd/Pt, Te/Bi and S/(Te+Bi) than those collected adjacent to the reef. Vertical compositional profiles through the reef suggest that Pd/Cu and Pt/Cu decrease systematically upsection from mineralized to barren rock. The majority of samples with elevated As, Sb and Hg occur adjacent to the reef, not within it, or in sulfide-poor rocks. Neither magma mixing nor fluid migration models readily explain why the minor quantities of sulfide minerals immediately adjacent to the sulfide-enriched layers that form the J-M Reef have different element ratios than the sulfide minerals that form the reef. If all the sulfides formed by exsolution during a magma mixing event and the modal proportion of sulfide now in the rocks are simply the result of mechanical processes that concentrated the sulfides into some layers and not others, then the composition of the sulfide would not be expected to be different. Models that rely upon ascending liquids or fluids are incompatible with the presence of sulfides that are not enriched in PGE immediately below or interlayered with the PGE-enriched sulfides layers. PGE-enriched postcumulus fluids should have reacted to the same extent with sulfides immediately outside the reef as within the reef. One explanation is that some of the sulfide minerals in the rocks outside the reef have a different origin than those that make up the reef. The

  5. Material Engineering for Phase Change Memory

    Science.gov (United States)

    Cabrera, David M.

    As semiconductor devices continue to scale downward, and portable consumer electronics become more prevalent there is a need to develop memory technology that will scale with devices and use less energy, while maintaining performance. One of the leading prototypical memories that is being investigated is phase change memory. Phase change memory (PCM) is a non-volatile memory composed of 1 transistor and 1 resistor. The resistive structure includes a memory material alloy which can change between amorphous and crystalline states repeatedly using current/voltage pulses of different lengths and magnitudes. The most widely studied PCM materials are chalcogenides - Germanium-Antimony-Tellerium (GST) with Ge2Sb2Te3 and Germanium-Tellerium (GeTe) being some of the most popular stochiometries. As these cells are scaled downward, the current/voltage needed to switch these materials becomes comparable to the voltage needed to sense the cell's state. The International Roadmap for Semiconductors aims to raise the threshold field of these devices from 66.6 V/mum to be at least 375 V/mum for the year 2024. These cells are also prone to resistance drift between states, leading to bit corruption and memory loss. Phase change material properties are known to influence PCM device performance such as crystallization temperature having an effect on data retention and litetime, while resistivity values in the amorphous and crystalline phases have an effect on the current/voltage needed to write/erase the cell. Addition of dopants is also known to modify the phase change material parameters. The materials G2S2T5, GeTe, with dopants - nitrogen, silicon, titanium, and aluminum oxide and undoped Gallium-Antimonide (GaSb) are studied for these desired characteristics. Thin films of these compositions are deposited via physical vapor deposition at IBM Watson Research Center. Crystallization temperatures are investigated using time resolved x-ray diffraction at Brookhaven National Laboratory

  6. Laser-based sensors on UAVs for quantifying local emissions of greenhouse gases

    Science.gov (United States)

    Zondlo, Mark; Tao, Lei; O'Brien, Anthony; Ross, Kevin; Khan, Amir; Pan, Da; Golston, Levi; Sun, Kang; DiGangi, Josh

    2015-04-01

    well above the surface (up to 100 m). In addition, plumes were very narrow horizontally (10-30 m width) within 200 m of the emission origin. By using a mass balance approach of upwind versus downwind CH4 concentrations, coupled to meteorological wind data, the CH4 emission rate from the compressor station averaged 13 ± 5 g CH4 s-1, consistent with individual, leak surveys measured within the compressor station itself. More recently, we developed a mid-infrared version of the same sensor using an antimonide laser at 3.3 microns. This sensor has a precision of 2 ppbv CH4 at 10 Hz, a mass of 1.3 kg, and consumes 10 W of power. Flight tests show the improved precision is capable of detecting methane leaks from landfills and cattle feedlots at higher altitudes (500 m) and greater distances downwind (several km) than the near infrared CH4 sensor. Sampling strategy is particularly important for not only UAS-based flight patterns but also sensor design. Many tradeoffs exist between the sampling density of the flight pattern, sensor precision, accuracy of wind data, and geographic isolation of the source of interest, and these will be discussed in the context of airborne-based CH4 measurements in the field. The development of compact yet robust trace gas sensors to be deployed on small UAS opens new capabilities for atmospheric sensing such as quantifying local source emissions (e.g. farms, well pads), vertical profiling of trace gases in a forest canopy, and trace gas distributions in complex areas (mountains, urban canyons).

  7. Thin film studies toward improving the performance of accelerator electron sources

    Energy Technology Data Exchange (ETDEWEB)

    Mamun, Md Abdullah [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Old Dominion Univ., Norfolk, VA (United States)

    2016-05-31

    the task of implementing photocathode cooling, which is required for future high current electron beam applications. The best performing TiN-coated aluminum electrode demonstrated less than 15 pA of field emission current at -- 175 kV for a 10 mm cathode/anode gap, which corresponds to a field strength of 22.5 MV/m. Third, the effect of antimony thickness on the performance of bialkali-antimonide photocathodes was studied. The high-capacity effusion source enabled us to successfully manufacture photocathodes having a maximum QE around 10% and extended low voltage 1/e lifetime (> 90 days) at 532 nm via the co-deposition method, with relatively thick layers of antimony (≥ 300 nm). We speculate that alkali co-deposition provides optimized stoichiometry for photocathodes manufactured using thick Sb layers, which could serve as a reservoir for the alkali. In summary, this research examined the effectiveness of thin films applied on photogun chamber components to achieve an extremely high vacuum, to eliminate high voltage induced field emission from electrodes, and to generate photocurrent with high quantum yield with an extended operational lifetime. Simultaneous implementation of these findings can meet the challenges of future ultra-bright photoguns.

  8. Gamma-Ray Bursts: Lighting Up the High-Redshift Universe

    Science.gov (United States)

    Toy, Vicki Louise

    overlapping NHI and redshift ranges, our GRB-DLA galaxies have much larger SFRs than the QSO-DLA host galaxy sample; this may suggest that the QSO-DLA and GRB-DLA galaxy populations are different. We also compare star formation efficiencies to the local Universe and simulations at z = 3. A large portion of this thesis has focused on the development of a new ground- based GRB afterglow follow-up instrument, the Rapid infrared IMAger-Spectrometer (RIMAS), that will target high-redshift GRB afterglows to study early galaxy envi- ronments. RIMAS covers 0.97-2.37 mum and can simultaneously observe two band-passes in any observing mode: photometry, low-resolution spectroscopy (R ˜ 30), or high-resolution spectroscopy (R ˜ 4000). In particular, this thesis focuses on RIMAS's three detectors: two science grade Teledyne HgCdTe Astronomy Wide Area Infrared Imager with 2K x 2K, Reference Pixels and Guide Mode (H2RG) and a slit-viewer Spitzer Legacy Indium-Antimonide (InSb) array. We describe the detector hardware and characterization in detail and discuss general infrared detector troubleshooting methods at both cryogenic and room temperatures. Several software packages have been developed for RIMAS throughout this thesis work. We introduce RIMAS's quick reduction pipeline that takes raw images from a single acquisition and returns a single result frame. We then present a generalized data reduction pipeline that we have tested on two currently operational photometers. We also describe our detailed and realistic RIMAS throughput models for all three observing modes as well as our online observer calculators with these throughput models. All of our data products are open source and are publicly available on Github repositories with detailed documentation.

  9. Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

    Science.gov (United States)

    Nagaiah, Padmaja

    -channel MOSFETs. Band engineering, strain induced valence band splitting and quantum confinement is used to improve channel hole mobility. Experimental results on the Hall hole mobility is presented for InxGa1-xAs channels with varying In content, thickness of the quantum well and temperature. Then, high mobility InxGa 1-xAs heterostructure thus obtained are integrated with in-situ deposited high-k gate oxide required for high performance p-MOSFET and discuss the challenges associated with the gated structure and draw conclusions on this material system. Antimonide based channel materials such as GaSb and InxGa 1-xSb are explored for III-V based p-MOSFETs in last two chapters. Options for Sb based strained QW channels to obtain maximum hole mobility by varying the strain, channel and barrier material, thickness of the layers etc. is discussed followed by the growth of these Sb channels on GaAs and InP substrates using molecular beam epitaxy. The physical properties of the structures such as the heterostructure quality, alloy content and surface roughness are examined via TEM, XRD and AFM. Following this, electrical measurement results on Hall hole mobility is presented. The effect of strain, alloy content, temperature and thickness on channel mobility and concentration is reported. Development of GaSb n- and p-MOS capacitor structures with in-situ deposited HfO2 gate oxide dielectric using in-situ deposited amorphous Si (a-Si) interface passivation layer (IPL) to improve the interface quality of high-k oxide and (In)GaSb surface is presented. In-situ deposited gate oxides such as Al2O3 and combination oxide of Al 2O3 and HfO2 with and without the a-Si IPL are also explored as alternate gate dielectrics. Subsequently, MOS capacitor structures using buried InGaSb QWs are demonstrated. Development of an inversion type bulk GaSb with implanted source-drain contacts and in-situ deposited gate oxide HfO2 gate oxide is discussed. The merits of biaxial compressive strain is demonstrated

  10. Transmutation doping and recoil effects in semiconductors exposed to thermal neutrons; Transmutations provoquees et effets de recul dans les semi-conducteurs exposes aux neutrons thermiques; Prisadka i sdacha v rezul'tate prevrashcheniya poluprovodnikov pod dejstviem teplovykh nejtronov; Impurificacion por transmutacion y efectos de retroceso en los semiconductores expuestos a neutrones termicos

    Energy Technology Data Exchange (ETDEWEB)

    Crawford, Jr, J H; Cleland, J W [Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN (United States)

    1962-01-15

    Extensive studies of thermal neutron exposure of germanium have been made. Of the five isotopes, three transmute to chemical impurity whose yields in atoms per 100 neutron captures and half-lives are: Ga{sup 71} - 30.4, 11.4 d; As{sup 75} - 9.8, 82 min; Se{sup 77} - 1.2 , 39 h. Therefore, {approx} 3 acceptors (Ga{sup 71}) are introduced for each donor (As{sup 75} and Se{sup 77}) and through choice of exposure one may decrease the electron concentration of n-type Ge to very low values or convert n-type Ge to p-type. The half-life leading to Ga{sup 71} is conveniently long so that details of the ''radioactive titration'' may be followed by Hall coefficient and conductivity. Experiments also show that approximately one electron per neutron capture is removed by lattice defects created by the recoil of nuclei from capture {gamma}-ray emission. These displaced atoms may be restored to normal lattice sites by annealing at {approx}450 Degree-Sign C. Recoil effects in silicon have also been observed, approximately two charge carriers being removed per capture. Implications of these results and those on germanium will be discussed in terms of the capture {gamma}-ray spectrum. In indium antimonide the capture {gamma}-rays from In{sup 115} are not sufficient to displace a large number of nuclei and the major effect is production of Sn{sup 116}, a donor when substituted in an indium lattice position. Nuclear doping holds promise for investigating numerous compound semiconductors in which introduction of impurity by chemical means is difficult. (author) [French] Les auteurs ont etudie de maniere approfondie l'exposition du germanium aux neutrons thermiques. Pour trois des cinq isotopes de cette substance, il y a transmutation en impuretes chimiques, dont les rendements (en atomes pour 100 neutrons captures) et les periodes sont: pour le gallium-71, 30,4 et 11,4 jours; pour l'arsenic-75, 9,8 et 82 minutes; pour le selenium-77, 1,2 et 39 heures. En consequence, on introduit trois