Ultra-thin fluoropolymer buffer layer as an anode stabilizer of organic light emitting devices

International Nuclear Information System (INIS)

Yang, Nam Chul; Lee, Jaeho; Song, Myung-Won; Ahn, Nari; Kim, Mu-Hyun; Lee, Songtaek; Chin, Byung Doo

2007-01-01

We have investigated the effect of thin fluoro-acrylic polymer as an anode stabilizer on the lifetime of an organic light emitting device (OLED). Surface chemical properties of commercial fluoropolymer, FC-722 (Fluorad(TM) of 3M), on indium-tin oxide (ITO) were characterized by x-ray photoemission spectroscopy. An OLED with 1 nm thick fluoropolymeric film showed identical brightness and efficiency behaviour and improved operational stability compared with the reference device with UV-O 3 treated ITO. The improvement in the lifetime was accompanied by the suppression of the voltage increase at the initial stage of constant-current driving, which can be attributed to the action of the FC-722 layer by smoothing the ITO surface. Fluoropolymer coating, therefore, improves the lifetime of the small molecular OLED by the simple and reliable anode-stabilizing process

Effect of pentacene/Ag anode buffer and UV-ozone treatment on durability of small-molecule organic solar cells

International Nuclear Information System (INIS)

Inagaki, S; Sueoka, S; Harafuji, K

2017-01-01

Three surface modifications of indium tin oxide (ITO) are experimentally investigated to improve the performance of small-molecule organic solar cells (OSCs) with an ITO/anode buffer layer (ABL)/copper phthalocyanine (CuPc)/fullerene/bathocuproine/Ag structure. An ultrathin Ag ABL and ultraviolet (UV)-ozone treatment of ITO independently improve the durability of OSCs against illumination stress. The thin pentacene ABL provides good ohmic contact between the ITO and the CuPc layer, thereby producing a large short-circuit current. The combined use of the abovementioned three modifications collectively achieves both better initial performance and durability against illumination stress. (paper)

Effect of pentacene/Ag anode buffer and UV-ozone treatment on durability of small-molecule organic solar cells

Science.gov (United States)

Inagaki, S.; Sueoka, S.; Harafuji, K.

2017-06-01

Three surface modifications of indium tin oxide (ITO) are experimentally investigated to improve the performance of small-molecule organic solar cells (OSCs) with an ITO/anode buffer layer (ABL)/copper phthalocyanine (CuPc)/fullerene/bathocuproine/Ag structure. An ultrathin Ag ABL and ultraviolet (UV)-ozone treatment of ITO independently improve the durability of OSCs against illumination stress. The thin pentacene ABL provides good ohmic contact between the ITO and the CuPc layer, thereby producing a large short-circuit current. The combined use of the abovementioned three modifications collectively achieves both better initial performance and durability against illumination stress.

Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

International Nuclear Information System (INIS)

Huang, H.-H.; Chu, S.-Y.; Kao, P.-C.; Chen, Y.-C.; Yang, M.-R.; Tseng, Z.-L.

2009-01-01

The advantages of using an anode buffer layer of ZnO on the electro-optical properties of organic light emitting devices (OLEDs) are reported. ZnO powders were thermal-evaporated and then treated with ultra-violet (UV) ozone exposure to make the ZnO layers. The turn-on voltage of OLEDs decreased from 4 V (4.2 cd/m 2 ) to 3 V (3.4 cd/m 2 ) and the power efficiency increased from 2.7 lm/W to 4.7 lm/W when a 1-nm-thick ZnO layer was inserted between indium tin oxide (ITO) anodes and α-naphthylphenylbiphenyl diamine (NPB) hole-transporting layers. X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS) results revealed the formation of the ZnO layer and showed that the work function increased by 0.59 eV when the ZnO/ITO layer was treated by UV-ozone for 20 min. The surface of the ZnO/ITO film became smoother than that of bare ITO film after the UV-ozone treatment. Thus, the hole-injection energy barrier was lowered by inserting an ZnO buffer layer, resulting in a decrease of the turn-on voltage and an increase of the power efficiency of OLEDs.

Solid oxide fuel cell bi-layer anode with gadolinia-doped ceria for utilization of solid carbon fuel

Energy Technology Data Exchange (ETDEWEB)

Kellogg, Isaiah D. [Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, 290A Toomey Hall, 400 West 13th Street, Rolla, MO 65409 (United States); Department of Materials Science and Engineering, Missouri University of Science and Technology, 223 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409 (United States); Koylu, Umit O. [Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, 290A Toomey Hall, 400 West 13th Street, Rolla, MO 65409 (United States); Dogan, Fatih [Department of Materials Science and Engineering, Missouri University of Science and Technology, 223 McNutt Hall, 1400 N. Bishop, Rolla, MO 65409 (United States)

2010-11-01

Pyrolytic carbon was used as fuel in a solid oxide fuel cell (SOFC) with a yttria-stabilized zirconia (YSZ) electrolyte and a bi-layer anode composed of nickel oxide gadolinia-doped ceria (NiO-GDC) and NiO-YSZ. The common problems of bulk shrinkage and emergent porosity in the YSZ layer adjacent to the GDC/YSZ interface were avoided by using an interlayer of porous NiO-YSZ as a buffer anode layer between the electrolyte and the NiO-GDC primary anode. Cells were fabricated from commercially available component powders so that unconventional production methods suggested in the literature were avoided, that is, the necessity of glycine-nitrate combustion synthesis, specialty multicomponent oxide powders, sputtering, or chemical vapor deposition. The easily-fabricated cell was successfully utilized with hydrogen and propane fuels as well as carbon deposited on the anode during the cyclic operation with the propane. A cell of similar construction could be used in the exhaust stream of a diesel engine to capture and utilize soot for secondary power generation and decreased particulate pollution without the need for filter regeneration. (author)

Low-Temperature Preparation of Tungsten Oxide Anode Buffer Layer via Ultrasonic Spray Pyrolysis Method for Large-Area Organic Solar Cells

Directory of Open Access Journals (Sweden)

Ran Ji

2017-07-01

Full Text Available Tungsten oxide (WO3 is prepared by a low-temperature ultrasonic spray pyrolysis method in air atmosphere, and it is used as an anode buffer layer (ABL for organic solar cells (OSCs. The properties of the WO3 transition metal oxide material as well as the mechanism of ultrasonic spray pyrolysis processes are investigated. The results show that the ultrasonic spray pyrolysized WO3 ABL exhibits low roughness, matched energy level, and high conductivity, which results in high charge transport efficiency and suppressive recombination in OSCs. As a result, compared to the OSCs based on vacuum thermal evaporated WO3, a higher power conversion efficiency of 3.63% is reached with low-temperature ultrasonic spray pyrolysized WO3 ABL. Furthermore, the mostly spray-coated OSCs with large area was fabricated, which has a power conversion efficiency of ~1%. This work significantly enhances our understanding of the preparation and application of low temperature-processed WO3, and highlights the potential of large area, all spray coated OSCs for sustainable commercial fabrication.

Back contact buffer layer for thin-film solar cells

Science.gov (United States)

Compaan, Alvin D.; Plotnikov, Victor V.

2014-09-09

A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.

Low cost fuel cell diffusion layer configured for optimized anode water management

Science.gov (United States)

Owejan, Jon P; Nicotera, Paul D; Mench, Matthew M; Evans, Robert E

2013-08-27

A fuel cell comprises a cathode gas diffusion layer, a cathode catalyst layer, an anode gas diffusion layer, an anode catalyst layer and an electrolyte. The diffusion resistance of the anode gas diffusion layer when operated with anode fuel is higher than the diffusion resistance of the cathode gas diffusion layer. The anode gas diffusion layer may comprise filler particles having in-plane platelet geometries and be made of lower cost materials and manufacturing processes than currently available commercial carbon fiber substrates. The diffusion resistance difference between the anode gas diffusion layer and the cathode gas diffusion layer may allow for passive water balance control.

Methods for improved growth of group III nitride buffer layers

Science.gov (United States)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

2014-07-15

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

Energy Technology Data Exchange (ETDEWEB)

Hultqvist, Adam; Bent, Stacey F. [Department of Chemical Engineering, Stanford University, Stanford, California 94305 (United States); Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2015-07-20

Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

Rare earth zirconium oxide buffer layers on metal substrates

Science.gov (United States)

Williams, Robert K.; Paranthaman, Mariappan; Chirayil, Thomas G.; Lee, Dominic F.; Goyal, Amit; Feenstra, Roeland

2001-01-01

A laminate article comprises a substrate and a biaxially textured (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer over the substrate, wherein 0layer can be deposited using sol-gel or metal-organic decomposition. The laminate article can include a layer of YBCO over the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. A layer of CeO.sub.2 between the YBCO layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer can also be include. Further included can be a layer of YSZ between the CeO.sub.2 layer and the (RE.sub.x A.sub.(1-x)).sub.2 O.sub.2-(x/2) buffer layer. The substrate can be a biaxially textured metal, such as nickel. A method of forming the laminate article is also disclosed.

Thin film photovoltaic devices with a minimally conductive buffer layer

Science.gov (United States)

Barnes, Teresa M.; Burst, James

2016-11-15

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Effects of Alclad Layer and Anodizing Time on Sulfuric Acid Anodizing and Film Properties of 2E12 Aluminum Alloy

Directory of Open Access Journals (Sweden)

CHEN Gao-hong

2017-07-01

Full Text Available Alclad and unclad 2E12 aerospace aluminum alloy were treated by sulfuric acid anodic oxidation. The effects of alclad layer and anodizing time on the anodization behaviour and corrosion resistance of anodic oxide layer on 2E12 aluminum alloy were studied. Surface and cross-section morphology of anodic oxide films were observed by scanning electron microscopy. The electrochemical properties of anodic oxide films were analyzed by potentiodynamic polarization curve and electrochemical impedance spectroscopy. The results show that the protective anodic oxide layers are formed on alclad and unclad 2E12 aluminum alloy. The film thickness increases with anodizing time extending. The copper rich second phase particles lead to more cavity defects and even micro cracks on anodic oxide films of unclad 2E12 aluminum alloy. The anodic oxide films on alclad 2E12 aluminum alloy are thicker and have fewer cavity defects, resulting in better corrosion resistance. The films obtained after 30min and 45min anodic oxidation treatment exhibit lower corrosion current and higher impedance of the porous layer than other anodizing time.

Development of layered anode structures supported over Apatite-type Solid Electrolytes

Directory of Open Access Journals (Sweden)

Pandis P.

2016-01-01

Full Text Available Apatite-type lanthanum silicates (ATLS materials have attracted interest in recent literature as solid electrolytes for SOFCs. The fabrication of an ATLS based fuel cell with the state-of-art electrodes (NiO/YSZ as anode and LSCF or LSM as cathode can show degradation after long operation hours due to Si diffusion mainly towards the anode. In this work, we report a “layer-by-layer anodic electrodes” fabrication by means of spin coating and physical spraying. The overall aim of this work is the successful fabrication of such a layered structure including suitable blocking layers towards the inhibition of Si interdiffusion from the apatite electrolyte to the anode. The results showed that the deposition of 3 layers of LFSO/GDC (3μm, NiO/GDC (4μm and the final NiO/YSZ anode layer provided a stable half-cell, with no solid state reaction occurring among the electrodes and no Si diffusion observed towards the anode after thermal treatment at 800°C for 120h.

Experimental study of the organic light emitting diode with a p-type silicon anode

International Nuclear Information System (INIS)

Ma, G.L.; Xu, A.G.; Ran, G.Z.; Qiao, Y.P.; Zhang, B.R.; Chen, W.X.; Dai, L.; Qin, G.G.

2006-01-01

We have fabricated and studied an organic light emitting diode (OLED) with a p-type silicon anode and a SiO 2 buffer layer between the anode and the organic layers which emits light from a semitransparent top Yb/Au cathode. The luminance of the OLED is up to 5600 cd/m 2 at 17 V and 1800 mA/cm 2 , the current efficiency is 0.31 cd/A. Both its luminance and current efficiency are much higher than those of the OLEDs with silicon as the anodes reported previously. The enhancement of the luminance and efficiency can be attributed to an improved balance between the hole- and electron-injection through two efficient ways: 1) restraining the hole-injection by inserting an ultra-thin SiO 2 buffer layer between the Si anode and the organic layers; and 2) enhancing the electron-injection by using a low work function, low optical reflectance and absorption semitransparent Yb/Au cathode

Substrate-induced magnetism in epitaxial graphene buffer layers.

Science.gov (United States)

Ramasubramaniam, A; Medhekar, N V; Shenoy, V B

2009-07-08

Magnetism in graphene is of fundamental as well as technological interest, with potential applications in molecular magnets and spintronic devices. While defects and/or adsorbates in freestanding graphene nanoribbons and graphene sheets have been shown to cause itinerant magnetism, controlling the density and distribution of defects and adsorbates is in general difficult. We show from first principles calculations that graphene buffer layers on SiC(0001) can also show intrinsic magnetism. The formation of graphene-substrate chemical bonds disrupts the graphene pi-bonds and causes localization of graphene states near the Fermi level. Exchange interactions between these states lead to itinerant magnetism in the graphene buffer layer. We demonstrate the occurrence of magnetism in graphene buffer layers on both bulk-terminated as well as more realistic adatom-terminated SiC(0001) surfaces. Our calculations show that adatom density has a profound effect on the spin distribution in the graphene buffer layer, thereby providing a means of engineering magnetism in epitaxial graphene.

Effects of Alclad Layer and Anodizing Time on Sulfuric Acid Anodizing and Film Properties of 2E12 Aluminum Alloy

OpenAIRE

CHEN Gao-hong; HU Yuan-sen; YU Mei; LIU Jian-hua; LI Guo-ai

2017-01-01

Alclad and unclad 2E12 aerospace aluminum alloy were treated by sulfuric acid anodic oxidation. The effects of alclad layer and anodizing time on the anodization behaviour and corrosion resistance of anodic oxide layer on 2E12 aluminum alloy were studied. Surface and cross-section morphology of anodic oxide films were observed by scanning electron microscopy. The electrochemical properties of anodic oxide films were analyzed by potentiodynamic polarization curve and electrochemical impedance ...

Buffer layers for REBCO films for use in superconducting devices

Science.gov (United States)

Goyal, Amit; Wee, Sung-Hun

2014-06-10

A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A.sub.2B'B''O.sub.6, where A is rare earth or alkaline earth metal and B' and B'' are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.

Designing Si/porous-C composite with buffering voids as high capacity anode for lithium-ion batteries

International Nuclear Information System (INIS)

Yue, Lu; Zhang, Wenhui; Yang, Jingfeng; Zhang, Lingzhi

2014-01-01

A novel Si/porous-C composite with buffering voids was prepared by the co-assembly of phenol-formaldehyde resin, SiO 2 and Si nanoparticles, followed by a carbonizing process and subsequent removal of SiO 2 template. Si nanoparticle was coated with a layer of porous carbon shell with rationally designed void in between which provides the accommodating space for the volume change of Si over cycling. The as-prepared composite electrode exhibited good electrochemical performances as an anode material in lithium-ion cells, showing a stable reversible capacity of 980 mAh g −1 over 80 cycles with small capacity fade of 0.17%/cycle and high rate capability (721 mAh g −1 at 2000 mA g −1 )

Electrochemical impedance study of copper in phosphate buffered solution

International Nuclear Information System (INIS)

Salimon, J.; Mohamad, M.; Yamin, B.M.; Kalaji, M.

2003-01-01

The processes occurring on the copper electrode surface in phosphate buffered solution were investigated using the Electrochemical Impedance Spectroscopy. The electrochemical behaviors of copper through their charge transfer resistance and double-layer capacitance at the onset of the hydrogen evolution region and the anodic passivation layer formation and diffusion of copper species at anodic potential regions are discussed. The specific adsorption of anions (hydroxide and/or H/sub 2/PO/sub 4/) occurred at potential less negative than -0.9V. Adsorbed hydrogen appeared at hydrogen evolution region at potential range of -1.5 to -1.0 V. The deposition of insoluble copper species occurred at anodic potential regions. (author)

Co-extrusion of electrolyte/anode functional layer/anode triple-layer ceramic hollow fibres for micro-tubular solid oxide fuel cells-electrochemical performance study

Science.gov (United States)

Li, Tao; Wu, Zhentao; Li, K.

2015-01-01

In this study, the effects of an anode functional layer (AFL) with controlled thickness on physical and electrochemical properties of a micro-tubular SOFC have been systematically studied. A series of electrolyte/AFL/anode triple-layer hollow fibres with controllable AFL thicknesses (16.9-52.7 μm) have been fabricated via a single-step phase-inversion assisted co-extrusion technique. Both robustness of the cell and gas-tightness of the electrolyte layer are considerably improved by introducing the AFL of this type. The fracture force of the sample with the thickest AFL (9.67 N) almost doubles when compared to the electrolyte/anode dual-layer counterpart (5.24 N). Gas-tightness of the electrolyte layer is also considerably increased as AFL contributes to better-matched sintering behaviours between different components. Moreover, the formation of an AFL simultaneously with electrolyte and anode significantly improves the cell performances. The sample with the thinnest AFL (approximately 16.9 μm, 6% of the total anode thickness) leads to a 30% (from 0.89 to 1.21 W cm-2) increase in maximum power density, due to increased triple-phase boundaries (TPB). However, further increase in TPB from a thicker AFL is less effective for improving the cell performance, due to the substantially increased fuel diffusion resistance and subsequently higher concentration polarization. This indicates that the control over the AFL thickness is critically important in avoiding offsetting the benefits of extended TPB and consequently decreased cell performances.

Time resolved measurements of plasma potential across an anode double layer

International Nuclear Information System (INIS)

Pohoata, V.; Popa, Gh.; Schrittwieser, R.; Ionita, Codrina

2002-01-01

Experimental results are presented on self-sustained oscillations produced by the dynamics of an anode double layer or fireball in a DP-machine. By additional ionisation processes the fireball is formed in front of an additional small plane anode inserted in the diffusive plasma. An annular (ring) electrode surrounds the anode. The thickness of the ion sheath in front of this ring affects the anode current by controlling its effective diameter during the fireball oscillations. The ring potential controls first the oscillation frequency of the anode current, but also other characteristics of the instability. The ring potential was chosen as a pulsed one so that only single anode double layer instability can be excited. The ring signal was used for triggering the data acquisition system. The spatial distribution of the plasma potential in front of the anode is presented as a time resolved measurement one. A negative drop potential was found that controls the charge flux particle across the double layer. Also the plasma density inside the fireball relaxes during the disrupting time controlled by ambipolar diffusion and also by the negative potential drop. (authors)

Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

International Nuclear Information System (INIS)

Jiang Qianlei; Xue Ruisheng; Jia Mengqiu

2012-01-01

A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu 2 Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

International Nuclear Information System (INIS)

Jia Yunpeng; Su Hongyuan; Hu Dongqing; Wu Yu; Jin Rui

2016-01-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. (paper)

Performance of strontium- and magnesium-doped lanthanum gallate electrolyte with lanthanum-doped ceria as a buffer layer for IT-SOFCs

Science.gov (United States)

Lee, Dokyol; Han, Ju-Hyeong; Kim, Eun-Gu; Song, Rak-Hyun; Shin, Dong-Ryul

La 0.8Sr 0.2Ga 0.8Mg 0.2O 2.8 (LSGM8080) powder, showing the highest electrical conductivity among LSGMs of various compositions, is synthesized using the glycine nitrate process (GNP) and used as the electrolyte for an intermediate-temperature solid oxide fuel cell (IT-SOFC). The LDC (Ce 0.55La 0.45O 1.775) powder is synthesized by a solid-state reaction and employed as the material for a buffer layer to prevent the reaction between the anode and electrolyte materials. The LDC also serves as the skeleton material for the anode. An anode-supported single cell with an active area of 1 cm 2 is constructed for performance evaluation. A single-cell test is performed at 750 and 800 °C. The maximum power density of the cell 459 and 664 mW cm -2 at 750 and 800 °C, respectively.

Selective Excitation of Window and Buffer Layers in Chalcopyrite Devices and Modules

Energy Technology Data Exchange (ETDEWEB)

Glynn, Stephen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Repins, Ingrid L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Burst, James M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Beall, Carolyn L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bowers, Karen A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Mansfield, Lorelle M [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2018-02-02

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects of the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. This provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.

Automotive assessment of carbon-silicon composite anodes and methods of fabrication

Science.gov (United States)

Karulkar, Mohan; Blaser, Rachel; Kudla, Bob

2015-01-01

To assess the potential of carbon silicon composite anodes for automotive applications, C-Si anodes were fabricated and certain improvements employed. The use of a PVDF buffer layer is demonstrated for the first time with a C-Si composite material. The buffer layer increases adhesion by 89%, and increases capacity by 50-80%. Also, a limited capacity range is employed to improve cycle life by up to 200%, and enable currents as high as 2 mA cm-1. The combined use of a buffer layer and limited capacity range has not been reported before. A model is also presented for comparing C-Si performance with real-world automotive targets from USABC, including energy density, power density, specific energy, and specific power. The analysis reveals a capacity penalty that arises from pairing C-Si with a traditional cathode (NCA), and which prevents the cell from meeting all targets. Scenarios are presented in which a higher-capacity cathode (250 mAh g-1) allows all targets to be hypothetically met.

Photo-induced wettability of TiO{sub 2} film with Au buffer layer

Energy Technology Data Exchange (ETDEWEB)

Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam [School of Physics, University of Hyderabad, Hyderabad-500046 (India); Madhurima, V., E-mail: madhurima.v@gmail.com [Department of Physics, Central University of Tamil Nadu, Thiruvarur-610004 (India)

2014-04-24

The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100° as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

Design and numerical simulation of the electromagnetic field of linear anode layer ion source

International Nuclear Information System (INIS)

Wang Lisheng; Tang Deli; Cheng Changming

2006-01-01

The principle of anode layer ion source for etching, pre-cleaning and ion beam assisted deposition was described. The influence of the magnetic field on the performance of anode layer ion source was analyzed. Design of the magnetic loop for the linear anode layer ion source was given. The electromagnetic field distribution of the ion source was simulated by means of ANSYS code and the simulation results were in agreement with experimental ones. The numerical simulation results of the electromagnetic field are useful for improving the anode layer ion source. (authors)

Investigation of anodizing parameter effect on barrier layer of anodic zirconium oxide

International Nuclear Information System (INIS)

Kharchenko, Eh.P.

1979-01-01

Effect of fluoride concentration and forming direction upon kinetics of barrier layer transformations in the process of preparation of phase anodic zirconium oxide in acid fluorine-containing solutions is considered. Suppositions are made on the mechanism of barrier layer transformation under the effect of the parameters mentioned. The thickness of the barrier layer is determined by two methods and it is shown that coefficient of the layer thickess growth at the voltage increase by 1 V is much lower than during formation of the barrier films in non-agressive electrolytes

Thermal resistance of buffer layer in a ceramic wall of MHD generation channel

International Nuclear Information System (INIS)

Nomura, Osami; Ebata, Yoshihiro; Hijikata, Kenichi.

1982-01-01

A wal l model is composed for obtaining the thermal resistance of the buffer layer. A buffer layer of the model is consisted to an adhesive layer and a buffer body. The adhesive layer is made of a copper plate, which is 0.3 mm thick, and adhered to the element by Refractory Method. The adhesive layer is consisted to three layers, i.e., Cu, Cu 2 O and CuO. These three layers seems to give rise to the thermal resistance. The buffer body is made of nickel wires of which radious is 0.4 mm and purity is 99.7%. All of the nickel wires are assembled in one direction which is parallel to a center line of the element, and bundled all together. Occupation ratio of nickel is about 78% in a sectional area of the buffer body. One end of the buffer body is soldered to adhesive layer by silver solder and opposite and is soldered to holder by lead solder. An element of the model is made of magnesia ceramics of which purity is about 99.9% and porosity is about 3%. A holder of the model is made of copper block. Results are as follows: (1) Thermal resistance of the buffer layer is from 1.9 to 2.5K/(W/cm 2 ). (2) Thermal resistance of the adhesive layer is from 0.43 to 0.87K/(W/cm 2 ). (3) Thermal resistance of the buffer body is calculated to about 0.7K/(W/cm 2 ) under the estimation at which the heat flows in the nickel wires only. (4) From above results, thermal resistance of silver soldering layer seems to be same as that of the adhesive layers. The buffer layer needs more value of the thermal resistance in order to apply to the MHD generation channel. Value of the thermal resistance is easily satisfied by changing of material of the buffer body, increase of thickness of the buffer layer and etc. Then this wall appears to be useful to an MHD generation channel wall. (author)

Inorganic-Organic Coating via Molecular Layer Deposition Enables Long Life Sodium Metal Anode.

Science.gov (United States)

Zhao, Yang; Goncharova, Lyudmila V; Zhang, Qian; Kaghazchi, Payam; Sun, Qian; Lushington, Andrew; Wang, Biqiong; Li, Ruying; Sun, Xueliang

2017-09-13

Metallic Na anode is considered as a promising alternative candidate for Na ion batteries (NIBs) and Na metal batteries (NMBs) due to its high specific capacity, and low potential. However, the unstable solid electrolyte interphase layer caused by serious corrosion and reaction in electrolyte will lead to big challenges, including dendrite growth, low Coulombic efficiency and even safety issues. In this paper, we first demonstrate the inorganic-organic coating via advanced molecular layer deposition (alucone) as a protective layer for metallic Na anode. By protecting Na anode with controllable alucone layer, the dendrites and mossy Na formation have been effectively suppressed and the lifetime has been significantly improved. Moreover, the molecular layer deposition alucone coating shows better performances than the atomic layer deposition Al 2 O 3 coating. The novel design of molecular layer deposition protected Na metal anode may bring in new opportunities to the realization of the next-generation high energy-density NIBs and NMBs.

Effect of a cathode buffer layer on the stability of organic solar cells

International Nuclear Information System (INIS)

Wang, Danbei; Zeng, Wenjin; Chen, Shilin; Su, Xiaodan; Wang, Jin; Zhang, Hongmei

2015-01-01

We present the effect of a cathode buffer layer on the performance and stability of organic photovoltaics (OPVs) based on a blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM). Six kinds of cathode buffer layers, i.e. lithium fluoride, sodium chloride, NaCl/Mg, tris-(8-hydroxy-quinoline) aluminum, bathocuproine and 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene, were inserted between the photoactive layer and an Al cathode, which played a dominant role in the device’s performance. Devices with the cathode buffer layers above exhibited improved performance. The degradation of these devices with encapsulation was further investigated in an inert atmosphere. The results indicated that devices with inorganic cathode buffer layers exhibited better stability than those with organic cathode buffer layers. (paper)

Performance of strontium- and magnesium-doped lanthanum gallate electrolyte with lanthanum-doped ceria as a buffer layer for IT-SOFCs

Energy Technology Data Exchange (ETDEWEB)

Lee, Dokyol; Han, Ju-Hyeong; Kim, Eun-Gu [Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea); Song, Rak-Hyun; Shin, Dong-Ryul [Hydrogen and Fuel Cell Research Department, Korea Institute of Energy Research, 71-2 Jang-dong, Yuseong-gu, Daejeon 305-600 (Korea)

2008-10-15

La{sub 0.8}Sr{sub 0.2}Ga{sub 0.8}Mg{sub 0.2}O{sub 2.8} (LSGM8080) powder, showing the highest electrical conductivity among LSGMs of various compositions, is synthesized using the glycine nitrate process (GNP) and used as the electrolyte for an intermediate-temperature solid oxide fuel cell (IT-SOFC). The LDC (Ce{sub 0.55}La{sub 0.45}O{sub 1.775}) powder is synthesized by a solid-state reaction and employed as the material for a buffer layer to prevent the reaction between the anode and electrolyte materials. The LDC also serves as the skeleton material for the anode. An anode-supported single cell with an active area of 1 cm{sup 2} is constructed for performance evaluation. A single-cell test is performed at 750 and 800 C. The maximum power density of the cell 459 and 664 mW cm{sup -2} at 750 and 800 C, respectively. (author)

Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

Science.gov (United States)

Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

2016-02-01

The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

Interfacial layers in tape cast anode-supported doped lanthanum gallate SOFC elements

Energy Technology Data Exchange (ETDEWEB)

Maffei, N.; De Silveira, G. [Materials Technology Laboratory, Natural Resources Canada, CANMET, 405 Rochester Street, Ottawa, Ontario (Canada) K1A OG3

2003-04-01

Lanthanum gallate doped with strontium and magnesium (LSGM) is a promising electrolyte system for intermediate temperature solid oxide fuel cells (SOFCs). The reported formation of interfacial layers in monolithic type SOFCs based on lanthanum gallate is of concern because of its impact on the performance of the fuel cell. Planar anode-supported SOFC elements (without the cathode) were prepared by the tape casting technique in order to determine the nature of the anode/electrolyte interface after sintering. Two anode systems were studied, one a NiO-CeO{sub 2} cermet, and the other, a modified lanthanum gallate anode containing manganese. Sintering studies were conducted at 1250, 1300, 1350, 1400 and 1450 C to determine the effect of temperature on the interfacial characteristics. Scanning electron microscopy (SEM) revealed a significant diffusion of Ni from the NiO-CeO{sub 2} anode resulting in the formation of an interfacial layer regardless of sintering temperature. Significant La diffusion from the electrolyte into the anode was also observed. In the case of the modified lanthanum gallate anode containing manganese, there was no interfacial layer formation, but a significant diffusion of Mn into the electrolyte was observed.

Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

International Nuclear Information System (INIS)

Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

2015-01-01

We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

International Nuclear Information System (INIS)

Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

2016-01-01

We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode. - Highlights: • The buffer layer surface morphology changes upon annealing of the buffer layer. • The coercivity decreases while the saturation magnetization and the effective anisotropy increase with the annealing of the buffer layer. • The reversal process changes from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation when annealing the buffer layer.

Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

International Nuclear Information System (INIS)

Chen, Lung-Chien; Tien, Ching-Ho; Liao, Wei-Chian; Luo, Yi-Min

2011-01-01

This work presents an aluminum nitride (AlN) nanocolumnar layer sputtered at various oblique angles and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm. The GaN-based LED structure is perpendicularly extended from the OA-AlN nanocolumnar layer. Then, the nanocolumnar structure is merged into p-GaN layer to form a mesa structure with a diameter of about 200-600 nm on the surface of the GaN-based LED. Moreover, optical characteristics of the LED were studied using photoluminescence, along with the blue-shifts observed as well. - Research highlights: → An AlN nanocolumnar buffer layer prepared by oblique-angle (OA) deposition. → GaN-based LED structures were grown on a sapphire substrate with an AlN nanocolumnar buffer layer. → The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm.

Sn buffered by shape memory effect of NiTi alloys as high-performance anodes for lithium ion batteries

International Nuclear Information System (INIS)

Hu Renzong; Zhu Min; Wang Hui; Liu Jiangwen; Liuzhang Ouyang; Zou Jin

2012-01-01

By applying the shape memory effect of the NiTi alloys to buffer the Sn anodes, we demonstrate a simple approach to overcome a long-standing challenge of Sn anode in the applications of Li-ion batteries – the capacity decay. By supporting the Sn anodes with NiTi shape memory alloys, the large volume change of Sn anodes due to lithiation and delithiation can be effectively accommodated, based on the stress-induced martensitic transformation and superelastic recovery of the NiTi matrix respectively, which leads to a decrease in the internal stress and closing of cracks in Sn anodes. Accordingly, stable cycleability (630 mA h g −1 after 100 cycles at 0.7C) and excellent high-rate capabilities (478 mA h g −1 at 6.7C) were attained with the NiTi/Sn/NiTi film electrode. These shape memory alloys can also combine with other high-capacity metallic anodes, such as Si, Sb, Al, and improve their cycle performance.

Impact of anode catalyst layer porosity on the performance of a direct formic acid fuel cell

International Nuclear Information System (INIS)

Bauskar, Akshay S.; Rice, Cynthia A.

2012-01-01

Highlights: ► Lithium carbonate is used as a pore-former to increase porosity of anode catalyst layer. ► Maximum power density increased by 25%. ► Onset potential for formic acid electro-oxidation reduced by 30 mV for anode catalyst layer with 17.5 wt% pore-former. ► Electrochemical impedance spectra confirm increased formic acid concentration inside the anode catalyst layer pores. - Abstract: Direct formic acid fuel cells (DFAFCs) have attracted much attention in the last few years for portable electronic devices, due to their potential of being high efficiency power sources. They have the potential to replace the state-of-the-art batteries in cell phones, PDAs, and laptop computers if their power density and durability can be improved. In the present investigation, the influence of increased anode catalyst layer porosity on DFAFC power density performance is studied. Lithium carbonate (Li 2 CO 3 ) was used as a pore-former in this study because of its facile and complete removal after catalyst layer fabrication. The anode catalyst layers presented herein contained unsupported Pt/Ru catalyst and Li 2 CO 3 (in the range of 0–50 wt%) bound with proton conducting ionomer. Higher DFAFC performance is obtained because of the increased porosity within the anode catalyst layer through enhanced reactant and product mass transport. The maximum power density of DFAFC increased by 25% when pore-former was added to the anode catalyst ink. The formic acid onset potential for the anode catalyst layer with 17.5 wt% pore-former was reduced by 30 mV. A constant phase element based equivalent-circuit model was used to investigate anode impedance spectra. Fitted values for the anode impedance spectra confirm the improvement in performance due to an increase in formic acid concentration inside the anode catalyst layer pores along with efficient transport of reactants and products.

The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

International Nuclear Information System (INIS)

Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

2013-01-01

The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

Buffer layer investigations on MFIS capacitors consisting of ferroelectric poly[vinylidene fluoride trifluoroethylene

International Nuclear Information System (INIS)

Henkel, K; Seime, B; Paloumpa, I; Mueller, K; Schmeisser, D

2010-01-01

In this paper we present capacitance-voltage (CV) measurements on metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE] as ferroelectric layer and SiO 2 , Al 2 O 3 and HfO 2 as buffering insulator layer. In order to discuss our data in a quantitative manner we perform fits to the data based on a model proposed by Miller and McWorther. The improvement of the polarization values and subsequently its effect on the hysteresis of the CV curve by the successive shrinking of the buffer layer thickness and the following choice of a high-k buffer material is demonstrated. Our data underline that a saturated polarization of P[VDF/TrFE] cannot be controlled with a SiO 2 buffer layer and the insertion of a high-k buffer layer is essential for further improvements of the characteristics of MFIS stacks.

Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

Science.gov (United States)

Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

2015-11-01

Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

Effects of anodizing conditions and annealing temperature on the morphology and crystalline structure of anodic oxide layers grown on iron

Science.gov (United States)

Pawlik, Anna; Hnida, Katarzyna; Socha, Robert P.; Wiercigroch, Ewelina; Małek, Kamilla; Sulka, Grzegorz D.

2017-12-01

Anodic iron oxide layers were formed by anodization of the iron foil in an ethylene glycol-based electrolyte containing 0.2 M NH4F and 0.5 M H2O at 40 V for 1 h. The anodizing conditions such as electrolyte composition and applied potential were optimized. In order to examine the influence of electrolyte stirring and applied magnetic field, the anodic samples were prepared under the dynamic and static conditions in the presence or absence of magnetic field. It was shown that ordered iron oxide nanopore arrays could be obtained at lower anodizing temperatures (10 and 20 °C) at the static conditions without the magnetic field or at the dynamic conditions with the applied magnetic field. Since the as-prepared anodic layers are amorphous in nature, the samples were annealed in air at different temperatures (200-500 °C) for a fixed duration of time (1 h). The morphology and crystal phases developed after anodization and subsequent annealing were characterized using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The results proved that the annealing process transforms the amorphous layer into magnetite and hematite phases. In addition, the heat treatment results in a substantial decrease in the fluorine content and increase in the oxygen content.

Fabrication and characterization of anode catalyst layers with structural variations for DMFC

Science.gov (United States)

Wang, Dazhi; Shi, Peng; Zhou, Peng; Mao, Qing; Liang, Junsheng; Wang, Suli; Li, Yang; Ren, Tongqun; Sun, Gongquan

2018-04-01

In this work, the electrohydrodynamic jet (E-Jet) Layer-by-Layer (LbL) deposition technique was employed to produce anode catalyst layer (CL) structure for direct methanol fuel cells (DMFC). The CLs with different thickness and porosity were fabricated with the control of the E-Jet deposition parameters. Then, the deposited anode CLs with structural variations were assembled to membrane electrode assemblies (MEAs). The results showed that the anode CL with higher porosity contributed higher dispersed catalyst, which further induced greater electrochemical active surface area (ESA) and higher performance. At optimized working condition the anode CL with high-dispersed catalyst of was produced using the E-Jet LbL deposition technique. It was observed that the peak power density is 72.8 mW cm‑2 for the cell having a porosity of 0.63, which has an increase of about 33% after modification of the CL structure.

Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer

Energy Technology Data Exchange (ETDEWEB)

Su, Shui-Hsiang, E-mail: shsu@isu.edu.tw; Wu, Chung-Ming; Kung, Shu-Yi; Yokoyama, Meiso

2013-06-01

Organic thin-film transistors (OTFTs) with various buffer layers between the active layer and source/drain electrodes were investigated. The structure was polyethylene terephthalate/indium-tin oxide/poly(methyl methacrylate) (PMMA)/pentacene/buffer layer/Au (source/drain). V{sub 2}O{sub 5}, 4,4′,4″-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine (m-MTDATA) and m-MTDATA-doped V{sub 2}O{sub 5} films were utilized as buffer layers. The electrical performances of OTFTs in terms of drain current, threshold voltage, mobility and on/off current ratio have been determined. As a result, the saturation current of − 40 μA is achieved in OTFTs with a 10% m-MTDATA-doped V{sub 2}O{sub 5} buffer layer at a V{sub GS} of − 60 V. The on/off current ratio reaches 2 × 10{sup 5}, which is approximately double of the device without a buffer layer. The energy band diagrams of the electrode/buffer layer/pentacene were measured using ultra-violet photoelectron spectroscopy. The improvement in electrical characteristics of the OTFTs is attributable to the weakening of the interface dipole and the lowering of the barrier to enhance holes transportation from the source electrode to the active layer. - Highlights: • A buffer layer enhances the performance of organic thin-film transistors (OTFTs). • The buffer layer consists of organic-doped inorganic material. • Interface dipole is weakened at the active layer/electrodes interface of OTFTs.

Improvement in the Lifetime of Planar Organic Photovoltaic Cells through the Introduction of MoO3 into Their Cathode Buffer Layers

Directory of Open Access Journals (Sweden)

Linda Cattin

2014-03-01

Full Text Available Recently, MoO3, which is typically used as an anode buffer layer in organic photovoltaic cells (OPVCs, has also been used as a cathode buffer layer (CBL. Here, we check its efficiency as a CBL using a planar heterojunction based on the CuPc/C60 couple. The CBL is a bi-layer tris-(8-hydroxyquinoline aluminum (Alq3/MoO3. We show that the OPVC with MoO3 in its CBL almost immediately exhibits lower efficiency than those using Alq3 alone. Nevertheless, the OPVCs increase their efficiency during the first five to six days of air exposure. We explain this evolution of the efficiency of the OPVCs over time through the variation in the MoO3 work function due to air contamination. By comparison to a classical OPVC using a CBL containing only Alq3, if it is found that the initial efficiency of the latter is higher, this result is no longer the same after one week of exposure to ambient air. Indeed, this result is due to the fact that the lifetime of the cells is significantly increased by the presence of MoO3 in the CBL.

Numerical simulation of solar cells besed CZTS buffer layer (ZnO 1 ...

African Journals Online (AJOL)

Cds buffer layer has many advantages such as large bandgap, and the carrier density. Otherwise, the presence of cadmium is an inconvenient. Research work, are shifted on the possibility of replacing CdS by a buffer layer devoid of cadmium. This manuscript presents the numerical study, using SCAPS-1D program, the ...

Hybrid solar cells based on CuInS2 and organic buffer-sensitizer layers

International Nuclear Information System (INIS)

Bereznev, S.; Koeppe, R.; Konovalov, I.; Kois, J.; Guenes, S.; Opik, A.; Mellikov, E.; Sariciftci, N.S.

2007-01-01

Hybrid solar cells on the basis of CuInS 2 (CIS) photoabsorber on Cu-tape (CISCuT) in combination with organic buffer layers of Zn-phthalocyanine (ZnPc), ZnPc:fullerene (ZnPc:C 60 ) composite and conductive polymer buffer layers of poly(3,4-ethylenedioxythiophene) (PEDOT) doped with polystyrenesulfonate (PSS) were prepared using vacuum evaporation and spin-casting techniques. To prepare solar cells with an active area of 2 cm 2 , the appropriate deposition parameters and thickness of ZnPc, ZnPc:C 60 and PEDOT-PSS layers were selected experimentally. For preparation of semitransparent contact-window layers, chromium and gold were evaporated on the surface of ZnPc, ZnPc:C 60 and PEDOT-PSS films. It was found that an intermediate chromium layer improves PV properties of the structures with organic buffer layers. The photosensitivity at small illumination intensities of complete structures with ZnPc and ZnPc:C 60 layers increased more than one order of magnitude in comparison with the structures where the PEDOT-PSS buffer layer was deposited. The presence of C 60 in the composite-buffer layer results in increased photoconductivity. The best structure with composite ZnPc:C 60 buffer layer showed an open-circuit voltage of 560 mV, a short-circuit current density of around 10 mA/cm 2 and a photoconversion efficiency of around 3.3% under the light illumination with an intensity of 100 mW/cm 2 from a tungsten-halogen lamp. The low transmission of the semitransparent chromium-gold window layer is the reason for relatively low current density

Structure of the Copper–Enriched Layer Introduced by Anodic Oxidation of Copper-Containing Aluminium Alloy

International Nuclear Information System (INIS)

Hashimoto, T.; Zhou, X.; Skeldon, P.; Thompson, G.E.

2015-01-01

This paper investigates the structure of the copper–enriched layer formed at the alloy/anodic film interface during anodizing of Al–2 wt.% Cu binary alloy using transmission electron microscopy. It was revealed that θ′ phase was formed within the copper–enriched layer. For the copper–enriched layer formed on {1 0 0} aluminum planes, the interface between the aluminum matrix and the θ′ phase within the copper-enriched layer is coherent. For the copper–enriched layer formed on {1 1 0} and {1 1 1} aluminum planes, the interfaces between the aluminum matrix and the θ′ phase within the copper-enriched layer are semi-coherent or incoherent. The interfacial coherency influences the formation of oxygen gas bubbles within the resultant anodic films.

Analysis of physical factors on chosen properties of anodic alumina oxide (AAO layers and environment

Directory of Open Access Journals (Sweden)

M. Gombár

2016-10-01

Full Text Available In the contribution is evaluated an impact of physical factors of anodizing process, namely the temperature of an electrolyte, anodizing time and voltage, on the change of values of Vickers microhardness and thickness of formed layer of experimental materials Al99∙5. By increasing of electrolyte temperature, the values of layer microhardness and thickness layer increase, namely about 0.78 % at the increasing of electrolyte temperature by 1 °C. By lengthening of anodizing time grows the value of layer thickness, but only to the value of the critical deposition time, when chemical dissolution of the layer start to be more prominent. By voltage increasing, values of layer thickness and micro-hardness are increased in the range of the used experimental values.

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

International Nuclear Information System (INIS)

Valdueza-Felip, S.; Ibáñez, J.; Monroy, E.; González-Herráez, M.; Artús, L.; Naranjo, F.B.

2012-01-01

We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of ∼ 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at ∼ 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: ► Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. ► Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. ► Room-temperature photoluminescence emission at 1.58 eV. ► InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, S., E-mail: sirona.valdueza@depeca.uah.es [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Ibanez, J. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Gonzalez-Herraez, M. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Artus, L. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Naranjo, F.B. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain)

2012-01-31

We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of {approx} 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at {approx} 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: Black-Right-Pointing-Pointer Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. Black-Right-Pointing-Pointer Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. Black-Right-Pointing-Pointer Room-temperature photoluminescence emission at 1.58 eV. Black-Right-Pointing-Pointer InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

Electrochemical behaviour of silver in borate buffer solutions

International Nuclear Information System (INIS)

Zaky, Ayman M.; Assaf, Fawzi H.; Abd El Rehim, Sayed S.; Mohamed, Basheer

2004-01-01

The electrochemical behaviour of Ag in aqueous 0.15 M borax and 0.15 M boric acid buffer solution was studied under various conditions using cyclic voltammetry and potentiostatic techniques. It was found that the anodic polarization curve of Ag in borate buffer solution was characterized by the appearance of two potential regions, active and passive, prior to the oxygen evolution reaction. The active potential region was characterized by the appearance of three anodic peaks, the first two peaks A 1 and A 2 correspond to the oxidation of Ag and formation of [Ag(OH) 2 ] - soluble compound and a passive film of Ag 2 O on the electrode surface. The third anodic peak corresponds to the conversion of both [Ag(OH) 2 ] - and Ag 2 O to Ag 2 O 2 . X-ray diffraction patterns confirmed the existence of Ag 2 O and Ag 2 O 2 passive layers on the electrode surface potentiodynamically polarized up to 800 mV. Potentiostatic current transient measurements showed that the formation of Ag 2 O and Ag 2 O 2 involves a nucleation and growth mechanism under diffusion control

The effect of Cu-rich sub-layer on the increased corrosion resistance of Cu-xZn alloys in chloride containing borate buffer

International Nuclear Information System (INIS)

Milosev, Ingrid; Mikic, Tadeja Kosec; Gaberscek, Miran

2006-01-01

The electrochemical behaviour of Cu-xZn alloys, as well as their constituent metals, in a borate buffer containing chloride ions in the molar range from 0.01 to 1 M are studied. Characteristics of these materials under anodic polarization are compared and the composition and morphology of the corrosion products formed in the course of polarization experiment are analysed by SEM and EDS. X-ray photoelectron spectroscopy and electrochemical impedance measurements are used for characterization of the surface layers formed on Cu, Zn and Cu-40Zn alloy during 2-h immersion at E oc in a borate buffer containing two different concentrations of chloride ions. New aspects of the behaviour of brass under E oc condition are revealed. The improved corrosion resistance of brass in chloride media, if compared to zinc metal, is attributed to a Cu-rich layer formed by the selective dissolution of zinc. Based on the results, a structural model describing the improved corrosion resistance of Cu-40Zn alloy with respect to Zn metal is proposed

Crystallinity Improvement of Zn O Thin Film on Different Buffer Layers Grown by MBE

International Nuclear Information System (INIS)

Shao-Ying, T.; Che-Hao, L.; Wen-Ming, Ch.; Yang, C.C.; Po-Ju, Ch.; Hsiang-Chen, W.; Ya-Ping, H.

2012-01-01

The material and optical properties of Zn O thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the Zn O layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality Zn O thin film growth. A Ga N buffer layer slightly increased the quality of the Zn O thin film, but the threading dislocations still stretched along the c-axis of the Ga N layer. The use of Mg O as the buffer layer decreased the surface roughness of the Zn O thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality Zn O thin film growth.

Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

Directory of Open Access Journals (Sweden)

Shao-Ying Ting

2012-01-01

Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

OPTIMISATION OF BUFFER SIZE FOR ENHANCING QOS OF VIDEO TRAFFIC USING CROSS LAYERED HYBRID TRANSPORT LAYER PROTOCOL APPROACH

Directory of Open Access Journals (Sweden)

S. Matilda

2011-03-01

Full Text Available Video streaming is gaining importance, with the wide popularity of multimedia rich applications in the Internet. Video streams are delay sensitive and require seamless flow for continuous visualization. Properly designed buffers offer a solution to queuing delay. The diagonally opposite QoS metrics associated with video traffic poses an optimization problem, in the design of buffers. This paper is a continuation of our previous work [1] and deals with the design of buffers. It aims at finding the optimum buffer size for enhancing QoS offered to video traffic. Network-centric QoS provisioning approach, along with hybrid transport layer protocol approach is adopted, to arrive at an optimum size which is independent of RTT. In this combinational approach, buffers of routers and end devices are designed to satisfy the various QoS parameters at the transport layer. OPNET Modeler is used to simulate environments for testing the design. Based on the results of simulation it is evident that the hybrid transport layer protocol approach is best suited for transmitting video traffic as it supports the economical design.

Study of shallow trench isolation technology with a poly-Si sidewall buffer layer

International Nuclear Information System (INIS)

Juang, M H; Chen, C L; Jang, S L

2008-01-01

Shallow trench isolation (STI) technology with a poly-Si buffer layer at the trench sidewall has been studied. At the densification temperature of 950 °C, for the samples without using a poly-Si buffer layer, the resulting junction shows a leakage of about 700 nA cm −2 for a diode area of 100 × 100 µm 2 , primarily due to large peripheral junction leakage. The large leakage is ascribed to the defect generation caused by a thermally induced stress near the trench sidewall. The usage of a poly-Si buffer layer in the trench sidewall is found to significantly improve the junction characteristics. As a result, when a 40 nm poly-Si buffer layer is sandwiched between the Si substrate and the trench-fill silicon oxide, the resultant junctions show a leakage of only about 8 nA cm −2 . This result may reflect the considerably reduced thermally induced stress near the trench sidewall. Furthermore, at the densification temperature of 1100 °C, the usage of a poly-Si buffer layer can help to achieve excellent junctions with a leakage smaller than 5 nA cm −2 for a diode area of 100 × 100 µm 2

Analysis of influence of buffer layers on microwave propagation through high-temperature superconducting thin films

International Nuclear Information System (INIS)

Ceremuga, J.; Barton, M.; Miranda, F.

1994-01-01

Methods of analysis of microwave propagation through superconducting thin films with buffer layers on dielectric substrates have been discussed. Expressions describing the transmission coefficient S 21 through the structure and the complex conductivity sigma of a superconductor in an analytical form have been derived. The derived equations are valid for microwave propagation in waveguides as well as in free space with relevant definition of impedances. Using the obtained solutions, the influences of buffer layers' parameters (thickness, relative permittivity and loss tangent) on the transmission coefficient has been investigated using MATLAB. Simulations have been performed for 10 GHz transmission through YBa 2 Cu 3 O 7 films on sapphire with SrTiO 3 and CeO 2 buffer layers and on silicon with CaF 2 and YSZ buffer layers. To illustrate the simulations, measurements of the transmission through YBCO film on sapphire with SrTiO 3 buffer layer have been performed. It has been shown that even lossy buffer layers have very little impact (smaller than 1% in magnitude and 0.3% in phase) on the transmission coefficient through superconducting thin films, providing their thickness is below 10 mu m. (author)

Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

Science.gov (United States)

Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

2015-10-13

Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

Buffer layer between a planar optical concentrator and a solar cell

Energy Technology Data Exchange (ETDEWEB)

Solano, Manuel E. [Departamento de Ingeniería Matemática and CI" 2 MA, Universidad de Concepción, Concepción, Casilla 160-C (Chile); Barber, Greg D. [Penn State Institute of Energy and the Environment, Pennsylvania State University, University Park, PA 16802 (United States); Department of Chemistry, Pennsylvania State University, University Park, PA 16802 (United States); Lakhtakia, Akhlesh [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802 (United States); Faryad, Muhammad [Department of Physics, Lahore University of Management Sciences, Lahore 54792 (Pakistan); Monk, Peter B. [Department of Mathematical Sciences, University of Delaware, Newark, DE 19716 (United States); Mallouk, Thomas E. [Department of Chemistry, Pennsylvania State University, University Park, PA 16802 (United States)

2015-09-15

The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

Formation of anodic layers on InAs (111)III. Study of the chemical composition

Energy Technology Data Exchange (ETDEWEB)

Valisheva, N. A., E-mail: valisheva@thermo.isp.nsc.ru; Tereshchenko, O. E. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Prosvirin, I. P.; Kalinkin, A. V. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation); Goljashov, V. A. [Novosibirsk State University (Russian Federation); Levtzova, T. A. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Bukhtiyarov, V. I. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

2012-04-15

The chemical composition of {approx}20-nm-thick anodic layers grown on InAs (111)III in alkaline and acid electrolytes containing or not containing NH{sub 4}F is studied by X-ray photoelectron spectroscopy. It is shown that the composition of fluorinated layers is controlled by the relation between the concentrations of fluorine and hydroxide ions in the electrolyte and by diffusion processes in the growing layer. Fluorine accumulates at the (anodic layer)/InAs interface. Oxidation of InAs in an acid electrolyte with a low oxygen content and a high NH{sub 4}F content brings about the formation of anodic layers with a high content of fluorine and elemental arsenic and the formation of an oxygen-free InF{sub x}/InAs interface. Fluorinated layers grown in an alkaline electrolyte with a high content of O{sup 2-} and/or OH{sup -} groups contain approximately three times less fluorine and consist of indium and arsenic oxyfluorides. No distinction between the compositions of the layers grown in both types of fluorine-free electrolytes is established.

Double-layered buffer to enhance the thermal performance in a high-level radioactive waste disposal system

International Nuclear Information System (INIS)

Choi, Heui-Joo; Choi, Jongwon

2008-01-01

A thermal performance is one of the most important factors in the design of a geological disposal system for high-level radioactive wastes. According to the conceptual design of the Korean Reference disposal System, the maximum temperature of its buffer with a domestic Ca-bentonite is close to the thermal criterion, 100 deg. C. In order to improve the thermal conductivity of its buffer, several kinds of additives are compared. Among the additives, graphite shows the best result in that the thermal conductivity of the bentonite block is more than 2.0 W/m deg. C. We introduced the concept of a double-layered buffer instead of a traditional bentonite block in order to use the applied additive more effectively. The thermal analysis, based upon the three-dimensional finite element method, shows that a double-layered buffer could reduce the maximum temperature on a canister's surface by 7 deg. C under identical conditions when compared with a single-layered buffer. An analytical solution was derived to efficiently analyze the effects of a double-layered buffer. The illustrative cases show that the temperature differences due to a double-layered buffer depend on the thickness of the buffer

A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2013-11-01

Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

Efficient small-molecule organic solar cells incorporating a doped buffer layer

Energy Technology Data Exchange (ETDEWEB)

Chou, Dei-Wei [Department of aviation and Communication Electronics, Air Force Institute of Technology, Kaohsiung 820, Taiwan (China); Chen, Kan-Lin [Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung 831, Taiwan (China); Huang, Chien-Jung, E-mail: chien@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Nanzih, Kaohsiung 811, Taiwan (China); Tsao, Yao-Jen [Department of Applied Physics, National University of Kaohsiung, Nanzih, Kaohsiung 811, Taiwan (China); Chen, Wen-Ray; Meen, Teen-Hang [Department of Electronic Engineering, National Formosa University, Hu-Wei, Yunlin 632, Taiwan (China)

2013-06-01

Small-molecule organic solar cells (OSCs) with an optimized structure of indium tin oxide/poly (3,4-ethylenedioxythioxythiophene):poly(styrenesulfonate)/copper phthalocyanine (CuPc) (10 nm)/CuPc: fullerene (C{sub 60}) mixed (20 nm)/C{sub 60} (20 nm)/4,7-diphenyl-1,10-phenanthroline (BPhen) (5 nm)/Ag were fabricated. In this study, the cesium carbonate-doped BPhen (Cs{sub 2}CO{sub 3}:BPhen) was adopted as the buffer layer to enhance the efficiency of the OSCs. The photovoltaic parameters of the OSCs, such as the short-circuit current density and fill factor, depend on the doping concentration of Cs{sub 2}CO{sub 3} in the BPhen layer. The cell with a Cs{sub 2}CO{sub 3}:BPhen (1:4) cathode buffer layer exhibits a power conversion efficiency (PCE) of 3.51%, compared to 3.37% for the device with the pristine BPhen layer. The enhancement of PCE was attributed to the energy-level alignment between the C{sub 60} layer and the Cs{sub 2}CO{sub 3}:BPhen layer. In addition, the characterization measured using atomic force microscopy shows that the Cs{sub 2}CO{sub 3}:BPhen layers have smoother surfaces. - Highlight: • Cs2CO3-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) cathode buffer layer. • Cs2CO3:BPhen layer with different ratios affects organic solar cells performance. • Cell with 1:4 (Cs2CO3:BPhen) ratio shows 3.51% power conversion efficiency.

Influence of a ZnO Buffer Layer on the Structural, Optical, and Electrical Properties of ITO/ZnO Bi-Layered Films

International Nuclear Information System (INIS)

Heo, Sung-Bo; Moon, Hyun-Joo; Kim, Daeil; Kim, Jun-Ho

2016-01-01

Sn-doped indium oxide (ITO) films and ITO/ZnO bi-layered films were prepared on polycarbonate substrates by RF magnetron sputtering without intentional substrate heating. In order to consider the influence of the ZnO thickness on the structural, optical, and electrical properties of ITO/ZnO films, the thickness of the ZnO buffer layer was varied from 5 to 20 nm. As-deposited ITO films show an average optical transmittance of 79.2% in the visible range and an electrical resistivity of 3.0×10"-"4 Ωcm, while films with a 5-nm thick ZnO buffer layer film show an electrical resistivity of 2.6×10"-"4 Ωcm and films with a 20-nm thick ZnO buffer layer show an optical transmittance of 82.0%. Based on the figure of merit, it is concluded that the ZnO buffer layer enhances the optical and electrical performance of ITO films used as transparent conducting oxides in flexible display applications.

Layer-based buffer aware rate adaptation design for SHVC video streaming

Science.gov (United States)

Gudumasu, Srinivas; Hamza, Ahmed; Asbun, Eduardo; He, Yong; Ye, Yan

2016-09-01

This paper proposes a layer based buffer aware rate adaptation design which is able to avoid abrupt video quality fluctuation, reduce re-buffering latency and improve bandwidth utilization when compared to a conventional simulcast based adaptive streaming system. The proposed adaptation design schedules DASH segment requests based on the estimated bandwidth, dependencies among video layers and layer buffer fullness. Scalable HEVC video coding is the latest state-of-art video coding technique that can alleviate various issues caused by simulcast based adaptive video streaming. With scalable coded video streams, the video is encoded once into a number of layers representing different qualities and/or resolutions: a base layer (BL) and one or more enhancement layers (EL), each incrementally enhancing the quality of the lower layers. Such layer based coding structure allows fine granularity rate adaptation for the video streaming applications. Two video streaming use cases are presented in this paper. The first use case is to stream HD SHVC video over a wireless network where available bandwidth varies, and the performance comparison between proposed layer-based streaming approach and conventional simulcast streaming approach is provided. The second use case is to stream 4K/UHD SHVC video over a hybrid access network that consists of a 5G millimeter wave high-speed wireless link and a conventional wired or WiFi network. The simulation results verify that the proposed layer based rate adaptation approach is able to utilize the bandwidth more efficiently. As a result, a more consistent viewing experience with higher quality video content and minimal video quality fluctuations can be presented to the user.

The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

Energy Technology Data Exchange (ETDEWEB)

Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); Nozaki, Takayuki; Zayets, Vadym; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Suzuki, Yoshishige [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

2016-08-28

The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes in the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.

p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells

Science.gov (United States)

Irwin, Michael D; Buchholz, Donald B; Marks, Tobin J; Chang, Robert P. H.

2014-11-25

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.

Effect of Cu buffer layer on magnetic anisotropy of cobalt thin films deposited on MgO(001 substrate

Directory of Open Access Journals (Sweden)

Syed Sheraz Ahmad

2016-11-01

Full Text Available Cobalt thin films with 5 nm thickness were prepared on single-crystal MgO (001 substrates with different thickness Cu buffer (0 nm, 5 nm, 10 nm, 20 nm. The structure, magnetic properties and transport behaviors were investigated by employing low-energy-electron-diffraction (LEED, magneto-optical Kerr effect (MOKE and anisotropic magnetoresistance (AMR. By comparing the magnetic properties of the sample as-deposited (without Cu buffer layer one with those having the buffer Cu, we found that the magnetic anisotropy was extremely affected by the Cu buffer layer. The magnetic anisotropy of the as-deposited, without buffer layer, sample shows the uniaxial magnetic anisotropy (UMA. We found that the symmetry of the magnetic anisotropy is changed from UMA to four-fold when the thickness of the Cu buffer layer reaches to 20 nm. Meanwhile, the coercivity increased from 49 Oe (without buffer layer to 300 Oe (with 20 nm Cu buffer, in the easy axis direction, as the thickness of the buffer layer increases. Moreover, the magnitudes of various magnetic anisotropy constants were determined from torque curves on the basis of AMR results. These results support the phenomenon shown in the MOKE.

Final Report: Rational Design of Wide Band Gap Buffer Layers for High-Efficiency Thin-Film Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Lordi, Vincenzo [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2016-09-30

The main objective of this project is to enable rational design of wide band gap buffer layer materials for CIGS thin-film PV by building understanding of the correlation of atomic-scale defects in the buffer layer and at the buffer/absorber interface with device electrical properties. Optimized wide band gap buffers are needed to reduce efficiency loss from parasitic absorption in the buffer. The approach uses first-principles materials simulations coupled with nanoscale analytical electron microscopy as well as device electrical characterization. Materials and devices are produced by an industrial partner in a manufacturing line to maximize relevance, with the goal of enabling R&D of new buffer layer compositions or deposition processes to push device efficiencies above 21%. Cadmium sulfide (CdS) is the reference material for analysis, as the prototypical high-performing buffer material.

Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.

Science.gov (United States)

Wu, Yun; Zou, Jianjun; Huo, Shuai; Lu, Haiyan; Kong, Yuecan; Chen, Tangshen; Wu, Wei; Xu, Jingxia

2015-08-01

Owing to the scattering and trapping effects, the interfaces of dielectric/graphene or substrate/graphene can tailor the performance of field-effect transistor (FET). In this letter, the polymer of benzocyclobutene (BCB) was used as an amphibious buffer layer and located at between the layers of substrate and graphene and between the layers of dielectric and graphene. Interestingly, with the help of nonpolar and hydrophobic BCB buffer layer, the large-scale top-gated, chemical vapor deposited (CVD) graphene transistors was prepared on Si/SiO2 substrate, its cutoff frequency (fT) and the maximum cutoff frequency (fmax) of the graphene field-effect transistor (GFET) can be reached at 12 GHz and 11 GHz, respectively.

Ca/Alq3 hybrid cathode buffer layer for the optimization of organic solar cells based on a planar heterojunction

Science.gov (United States)

El Jouad, Z.; Barkat, L.; Stephant, N.; Cattin, L.; Hamzaoui, N.; Khelil, A.; Ghamnia, M.; Addou, M.; Morsli, M.; Béchu, S.; Cabanetos, C.; Richard-Plouet, M.; Blanchard, P.; Bernède, J. C.

2016-11-01

Use of efficient anode cathode buffer layer (CBL) is crucial to improve the efficiency of organic photovoltaic cells. Here we show that using a double CBL, Ca/Alq3, allows improving significantly cell performances. The insertion of Ca layer facilitates electron harvesting and blocks hole collection, leading to improved charge selectivity and reduced leakage current, whereas Alq3 blocks excitons. After optimisation of this Ca/Alq3 CBL using CuPc as electron donor, it is shown that it is also efficient when SubPc is substituted to CuPc in the cells. In that case we show that the morphology of the SubPc layer, and therefore the efficiency of the cells, strongly depends on the deposition rate of the SubPc film. It is necessary to deposit slowly (0.02 nm/s) the SubPc films because at higher deposition rate (0.06 nm/s) the films are porous, which induces leakage currents and deterioration of the cell performances. The SubPc layers whose formations are kinetically driven at low deposition rates are more uniform, whereas those deposited faster exhibit high densities of pinholes.

Effects of buffer layer temperature on the magnetic properties of NdFeB thin film magnets

International Nuclear Information System (INIS)

Kim, Y.B.; Cho, S.H.; Kim, H.T.; Ryu, K.S.; Lee, S.H.; Lee, K.H.; Kapustin, G.A.

2004-01-01

Effects of the buffer layer temperature (T b ) on the magnetic properties and microstructure of [Mo/NdFeB/Mo]-type thin films have been investigated. The Mo-buffer layer with low T b is composed of fine grains while that with high T b has coarse grains. The subsequent NdFeB layer also grows with fine or coarse grains following the buffer layer structure. The NdFeB layer grown on a low T b buffer shows high coercivity and strong perpendicular anisotropy. The best magnetic properties of i H c =1.01 MA/m (12.7 kOe), B r =1.31 T (13.1 kG) and BH max =329 kJ/m 3 (41.4 MGOe) were obtained from the film with T b =400 deg. C

Buffer layers grown by replicating the texture of an original template tape

International Nuclear Information System (INIS)

Lim, Sunme; Yoo, Jaeun; Park, Chan; Youm, Dojun

2007-01-01

We propose a fabrication method of the buffer layers, whose biaxial textures are replicated from an original template tape. The purpose of this method is economical texturing process for coated conductors. At first we prepared a biaxially textured metal tape (TM-tape). Then a sacrifice layer (SA), a buffer layer (BU) and a thick metallic layer (SM) were sequentially deposited on the TM-tape. SA-layer and BU-layer were deposited epitaxially to copy the texture of the TM-tape. SA-layer was dissoluble in water. SM-layer with the textured BU-layer was separated and could be used for a supporting tape for the further growth of a superconducting layer. In this way, it is possible to reuse the original textured TM-tape many times. In this paper, we report the results of our experiments, in which we used a biaxially Ni tape, BaO film, STO film, and a thick Ag film for TM-tape, SA-layer, BU-layer, and SM-layer, respectively. The Ag/STO layers were successfully separated form the Ni tape by dissolving the BaO layer in water. The texture quality of the STO layer was well secured after the separation

Compositional control of continuously graded anode functional layer

Science.gov (United States)

McCoppin, J.; Barney, I.; Mukhopadhyay, S.; Miller, R.; Reitz, T.; Young, D.

2012-10-01

In this work, solid oxide fuel cells (SOFC's) are fabricated with linear-compositionally graded anode functional layers (CGAFL) using a computer-controlled compound aerosol deposition (CCAD) system. Cells with different CGAFL thicknesses (30 um and 50 um) are prepared with a continuous compositionally graded interface deposited between the electrolyte and anode support current collecting regions. The compositional profile was characterized using energy dispersive X-ray spectroscopic mapping. An analytical model of the compound aerosol deposition was developed. The model predicted compositional profiles for both samples that closely matched the measured profiles, suggesting that aerosol-based deposition methods are capable of creating functional gradation on length scales suitable for solid oxide fuel cell structures. The electrochemical performances of the two cells are analyzed using electrochemical impedance spectroscopy (EIS).

Non-Toxic Buffer Layers in Flexible Cu(In,GaSe2 Photovoltaic Cell Applications with Optimized Absorber Thickness

Directory of Open Access Journals (Sweden)

Md. Asaduzzaman

2017-01-01

Full Text Available Absorber layer thickness gradient in Cu(In1−xGaxSe2 (CIGS based solar cells and several substitutes for typical cadmium sulfide (CdS buffer layers, such as ZnS, ZnO, ZnS(O,OH, Zn1−xSnxOy (ZTO, ZnSe, and In2S3, have been analyzed by a device emulation program and tool (ADEPT 2.1 to determine optimum efficiency. As a reference type, the CIGS cell with CdS buffer provides a theoretical efficiency of 23.23% when the optimum absorber layer thickness was determined as 1.6 μm. It is also observed that this highly efficient CIGS cell would have an absorber layer thickness between 1 μm and 2 μm whereas the optimum buffer layer thickness would be within the range of 0.04–0.06 μm. Among all the cells with various buffer layers, the best energy conversion efficiency of 24.62% has been achieved for the ZnO buffer layer based cell. The simulation results with ZnS and ZnO based buffer layer materials instead of using CdS indicate that the cell performance would be better than that of the CdS buffer layer based cell. Although the cells with ZnS(O,OH, ZTO, ZnSe, and In2S3 buffer layers provide slightly lower efficiencies than that of the CdS buffer based cell, the use of these materials would not be deleterious for the environment because of their non-carcinogenic and non-toxic nature.

Suppression on allotropic transformation of Sn planar anode with enhanced electrochemical performance

Science.gov (United States)

Wang, Peng; Hu, Junhua; Cao, Guoqin; Zhang, Shilin; Zhang, Peng; Liang, Changhao; Wang, Zhuo; Shao, Guosheng

2018-03-01

Different configurations of Sn and C films were deposited and used as a planar anode for Li ion battery. The interplay of carbon layer with Sn as supporting and buffering, respectively, was revealed. The suppression on the allotropic transformation to α phase by a carbon layer results in a significantly improved capacity retention rate, which also avoids the crack of Sn film. As expected, a conductive carbon layer improves rating performance. However, a supporting carbon layer (SC) just contributes to the charge transfer process. A DFT approach was used to assess the allotropic transformation process. An additional barrier (∼0.86 eV) exits on the α-β diagram, which is responsible for the irreversibility of α phase back to β phase. An enhanced persistence of β phase in Sn/C anode contributes to cycling performance. A Li rich condition contributes to the stabilization of β-Sn, which is thermodynamically favored. A nano buffering carbon (BC) layer can evidently alleviate the side reaction on Sn surface, which in turn promotes the diffusion of Li ions in electrode and generates a Li rich condition. The direct contact of Sn with electrolyte leads to serious accumulation of α-Sn during cycling and results in a poor cycling performance. By the synergistic effect of BC and SC, a sandwich C/Sn/C structure demonstrates an enchantment in electrochemical behavior.

Photo-electrochemical and impedance investigation of passive layers grown anodically on titanium alloys

Energy Technology Data Exchange (ETDEWEB)

Oliveira, N.T.C. [Departamento de Quimica, Universidade Federal de Sao Carlos, CP 676, 13560-970 Sao Carlos, SP (Brazil); Biaggio, S.R. [Departamento de Quimica, Universidade Federal de Sao Carlos, CP 676, 13560-970 Sao Carlos, SP (Brazil); Piazza, S. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy)]. E-mail: piazza@dicpm.unipa.it; Sunseri, C. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy); Di Quarto, F. [Dipartimento di Ingegneria Chimica dei Processi e dei Materiali, Universita di Palermo, Viale delle Scienze, 90128 Palermo (Italy)

2004-10-15

The anodic behaviour of two titanium cast alloys, obtained by fusion in a voltaic arc under argon atmosphere, was analyzed in aerated aqueous solutions having different pH values. In all solutions the alloys, having nominal compositions Ti-50Zr at.% and Ti-13Zr-13Nb wt.%, displayed a valve-metal behaviour, owing to the formation of barrier-type oxide films. Passive films, grown potentiodynamically up to about 9 V, were investigated by photocurrent spectroscopy (PCS) and electrochemical impedance spectroscopy (EIS). These passive layers show photoactivity under anodic polarizations, with optical gaps close to 3.55 and 3.25 eV for the binary and the ternary alloy, respectively, independent of the anodizing electrolyte. Films grown on the binary alloy present insulating behaviour and anodic impedance spectra with one time constant; this was interpreted in terms of a single-layer mixed Ti-Zr oxide enriched in Ti with respect to the alloy composition. Also for the ternary alloy the results are consistent with the formation, upon anodization, of Ti-Nb-Zr mixed oxide films, but they display n-type semiconducting behaviour, owing to their poor content of ZrO{sub 2} groups.

Conductive and robust nitride buffer layers on biaxially textured substrates

Science.gov (United States)

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

Organic field-effect transistors with surface modification by using a PVK buffer layer on flexible substrates

Energy Technology Data Exchange (ETDEWEB)

Hyung, Gun Woo; Lee, Dong Hyung; Koo, Ja Ryong; Kim, Young Kwan [Hongik University, Seoul (Korea, Republic of); Park, Jae Hoon [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of)

2012-11-15

We have fabricated pentacene thin-film transistors (TFTs) with a gate dielectric such as crosslinked poly(vinyl alcohol) (c-PVA), with poly(9-vinylcarbazole) (PVK) buffer layer on a polyethersulfone (PES) flexible substrate, and with substrate heating at a temperature below 120 .deg. C, and we demonstrated the possibility of using an organic gate dielectric layer as a potential pentacene TFT with a PVK buffer layer for low-voltage operation on a plastic substrate. We report the excellent electrical properties of organic TFTs with a PVK buffer layer. The PVK buffer layer improves the performance of the devices and reduces the operating voltage of the devices. Our pentacene TFTs can be fabricated with mobilities > 2.54 cm{sup 2}/Vs and on/off current ratios > 7.5E5 and with flexible organic dielectrics and substrates.

Atomic Layer Deposition of SnO2 on MXene for Li-Ion Battery Anodes

KAUST Repository

Ahmed, Bilal; Anjum, Dalaver H.; Gogotsi, Yury; Alshareef, Husam N.

2017-01-01

In this report, we show that oxide battery anodes can be grown on two-dimensional titanium carbide sheets (MXenes) by atomic layer deposition. Using this approach, we have fabricated a composite SnO2/MXene anode for Li-ion battery applications

Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer

International Nuclear Information System (INIS)

Park, Dong Jun; Kim, Dong Chan; Lee, Jeong Yong; Cho, Hyung Koun

2006-01-01

The growth direction and morphology of one-dimensional ZnO nanostructures grown by metal-organic chemical vapour deposition (MOCVD) were modulated by changing the growth temperature of previously deposited ZnO buffer layers that were used as a template. The ZnO nanorods grown on the low-temperature deposited buffer layer were regularly inclined with respect to the substrate surface and show in-plane alignment with azimuthally six-fold symmetry. In contrast, deposition of the buffer layer at higher growth temperature led to the formation of vertically well-aligned ZnO nanorods. In addition, the ZnO nanorods grown on the buffer layer deposited at low growth temperature show a growth direction of [1 0 1-bar 0], unlike the conventional ZnO nanorods showing a growth direction of [0001]. The microstructural analysis and atomic modelling of the formation of regularly inclined nanorods using transmission electron microscopy are presented

The function of buffer layer in resistive switching device.

Czech Academy of Sciences Publication Activity Database

Zhang, B.; Prokop, V.; Střižík, L.; Zima, Vítězslav; Kutálek, P.; Vlček, Milan; Wágner, T.

2017-01-01

Roč. 14, č. 8 (2017), s. 291-295 ISSN 1584-8663 Institutional support: RVO:61389013 Keywords : resistive switching * chalcogenide glasses * buffer layer Subject RIV: CA - Inorganic Chemistry Impact factor: 0.732, year: 2016 http://www.chalcogen.ro/291_ZhangB.pdf

The simulation of the temperature effects on the microhardness of anodic alumina oxide layers

Directory of Open Access Journals (Sweden)

M. Gombár

2014-01-01

Full Text Available In order to improve the mechanical properties of the layer deposited by anodic oxidation of aluminum on the material EN AW-1050 H24, in the contribution was investigated the microhardness of the deposited layer as a function of the physic-chemical factors affecting in the process of anodic oxidation at the constant anodic current density J = 3 A.dm-2 in electrolyte formed by sulfuric acid and oxalic acid, with the emphasis on the influence of electrolyte temperature in the range – 1,78 °C to 45,78 °C. The model of the studied dependence was compiled based on mathematical and statistical analysis of matrix from experimental obtained data from composite rotation plan of experiment with five independent variable factors (amount of sulfuric acid in the electrolyte, the amount of oxalic acid in the electrolyte, electrolyte, anodizing time and applied voltage.

Electrochemical characteristics of porous TiO2 encapsulated silicon anode

International Nuclear Information System (INIS)

Jeon, Bup Ju; Lee, Joong Kee

2011-01-01

Graphical abstract: Cycling performances of the TiO 2 coated silicon anode at different catalyst pH values. Display Omitted Highlights: → TiO 2 coated silicon was used as the anode material for lithium batteries. → TiO 2 layer acted as a buffer layer for reducing the volume expansion. → Pore size distribution of TiO 2 coated silicon influenced discharge capacity. → Higher capacity retention was exhibited at pH 10.7. - Abstract: TiO 2 coated silicon, which was prepared by the modified sol-gel method, was employed as the anode material for lithium secondary batteries and the relationship between the diffusivity and electrochemical characteristics was investigated. The results showed that the physical properties of the samples, such as their diffusivity and pore size distribution, enhanced the cycling efficiency of the TiO 2 coated silicon, probably due to the reduction of the side reactions, which may be closely related to the pore size distribution of the TiO 2 coating layer. The pore size of the coating layer plays an important role in retarding the lithium ion diffusion. In the experimental range studied herein, higher capacity retention was exhibited for the TiO 2 coated silicon prepared at pH 10.7.

High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

International Nuclear Information System (INIS)

Xu, Q.Y.; Wang, Z.M.; Shen, F.; Du, Y.W.; Zhang, Z.

2003-01-01

The anisotropic magnetoresistance (AMR) in permalloy Ni 81 Fe 19 film deposited on a 1.2 nm Co 33 Cr 67 buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni 81 Fe 19 film with and without Co 33 Cr 67 buffer layer. It was found that Co 33 Cr 67 buffer layer can induce good (1 1 1) texture, while without Co 33 Cr 67 buffer layer, Ni 81 Fe 19 film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni 81 Fe 19 film due to the formation of the large (1 1 1) textured grains in Ni 81 Fe 19 film with Co 33 Cr 67 buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni 81 Fe 19 film with Co 33 Cr 67 buffer layer, limit the enhancement of the AMR effect

Selective formation of porous layer on n-type InP by anodic etching combined with scratching

International Nuclear Information System (INIS)

Seo, Masahiro; Yamaya, Tadafumi

2005-01-01

The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width

Selective formation of porous layer on n-type InP by anodic etching combined with scratching

Energy Technology Data Exchange (ETDEWEB)

Seo, Masahiro [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)]. E-mail: seo@elechem1-mc.eng.hokudai.ac.jp; Yamaya, Tadafumi [Graduate School of Engineering, Hokkaido University, Kita-13 Jo, Nishi-8 Chome, Kita-ku, Sapporo 060-8628 (Japan)

2005-11-10

The selective formation of porous layer on n-type InP (001) surface was investigated by using scratching with a diamond scriber followed by anodic etching in deaerated 0.5M HCl. Since the InP specimen was highly doped, the anodic etching proceeded in the dark. The potentiodynamic polarization showed the anodic current shoulder in the potential region between 0.8 and 1.3V (SHE) for the scratched area in addition to the anodic current peak at 1.7V (SHE) for the intact area. The selective formation of porous layer on the scratched are was brought by the anodic etching at a constant potential between 1.0 and 1.2V (SHE) for a certain time. The nucleation and growth of etch pits on intact area, however, took place when the time passed the critical value. The cross section of porous layer on the scratched area perpendicular to the [1-bar 10] or [110] scratching direction had a V-shape, while the cross section of porous layer on the scratched area parallel to the [1-bar 10] or [110] scratching direction had a band structure with stripes oriented to the [1-bar 11] or [11-bar 1] direction. Moreover, nano-scratching at a constant normal force in the micro-Newton range followed by anodic etching showed the possibility for selective formation of porous wire with a nano-meter width.

Impact of ac/dc spark anodizing on the corrosion resistance of Al-Cu alloys

Energy Technology Data Exchange (ETDEWEB)

Alsrayheen, Enam, E-mail: ealsrayh@ucalgary.ca [Department of Chemistry, University of Calgary, 2500 University Drive NW, Calgary AB, T2N 1N4 (Canada); McLeod, Eric, E-mail: hmolero@ucalgary.ca [Department of Chemistry, University of Calgary, 2500 University Drive NW, Calgary AB, T2N 1N4 (Canada); Rateick, Richard, E-mail: richard.rateick@honeywell.com [Department of Chemistry, University of Calgary, 2500 University Drive NW, Calgary AB, T2N 1N4 (Canada); Molero, Hebert, E-mail: Eric.McLeod@stmu.ab.ca [Department of Chemistry, University of Calgary, 2500 University Drive NW, Calgary AB, T2N 1N4 (Canada); Birss, Viola, E-mail: birss@ucalgary.ca [Department of Chemistry, University of Calgary, 2500 University Drive NW, Calgary AB, T2N 1N4 (Canada)

2011-07-01

An ac/dc spark anodization method was used to deposit an oxide film (6 {+-} 3 {mu}m in thickness) on the Al-Cu alloy AA2219. The oxide films were formed at 10 mA/cm{sup 2} for 30 min in an alkaline silicate solution, showing three main stages of growth. Scanning electron microscopy and electron microprobe analysis revealed that the oxide films are not uniform and consist of three main layers, an inner Al-rich barrier layer ({approx}1 {mu}m), an intermediate Al-Si mixed oxide layer ({approx}2 {+-} 1 {mu}m), and an outer porous Si-rich layer ({approx}3 {+-} 3 {mu}m). In addition, microscopic analysis showed that the Al{sub 2}Cu intermetallics present in the alloy have not been excessively oxidized during the anodization process and thus are retained beneath the oxide film, as desired. The coating passivity and corrosion resistance, evaluated using linear sweep voltammetry (LSV) in pH 7 borate buffer solution and electrochemical impedance spectroscopy (EIS) in 0.86 M NaCl solution, respectively, were both significantly improved after spark-anodization.

Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

2015-07-01

GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

Two-Dimensional SnO Anodes with a Tunable Number of Atomic Layers for Sodium Ion Batteries

KAUST Repository

Zhang, Fan

2017-01-18

We have systematically changed the number of atomic layers stacked in 2D SnO nanosheet anodes and studied their sodium ion battery (SIB) performance. The results indicate that as the number of atomic SnO layers in a sheet decreases, both the capacity and cycling stability of the Na ion battery improve. The thinnest SnO nanosheet anodes (two to six SnO monolayers) exhibited the best performance. Specifically, an initial discharge and charge capacity of 1072 and 848 mAh g-1 were observed, respectively, at 0.1 A g-1. In addition, an impressive reversible capacity of 665 mAh g-1 after 100 cycles at 0.1 A g-1 and 452 mAh g-1 after 1000 cycles at a high current density of 1.0 A g-1 was observed, with excellent rate performance. As the average number of atomic layers in the anode sheets increased, the battery performance degraded significantly. For example, for the anode sheets with 10-20 atomic layers, only a reversible capacity of 389 mAh g-1 could be obtained after 100 cycles at 0.1 A g-1. Density functional theory calculations coupled with experimental results were used to elucidate the sodiation mechanism of the SnO nanosheets. This systematic study of monolayer-dependent physical and electrochemical properties of 2D anodes shows a promising pathway to engineering and mitigating volume changes in 2D anode materials for sodium ion batteries. It also demonstrates that ultrathin SnO nanosheets are promising SIB anode materials with high specific capacity, stable cyclability, and excellent rate performance.

Efficient Polymer Solar Cells with Alcohol-Soluble Zirconium(IV Isopropoxide Cathode Buffer Layer

Directory of Open Access Journals (Sweden)

Zhen Luo

2018-02-01

Full Text Available Interfacial materials are essential to the performance and stability of polymer solar cells (PSCs. Herein, solution-processed zirconium(IV isopropoxide (Zr[OCH(CH32]4, ZrIPO has been employed as an efficient cathode buffer layer between the Al cathode and photoactive layer. The ZrIPO buffer layer is prepared simply via spin-coating its isopropanol solution on the photoactive layer at room temperature without any post-treatment. When using ZrIPO/Al instead of the traditionally used Ca/Al cathode in PSCs, the short-circuit current density (Jsc is significantly improved and the series resistance of the device is decreased. The power conversion efficiency (PCE of the P3HT:PCBM-based device with ZrIPO buffer layer reaches 4.47% under the illumination of AM1.5G, 100 mW/cm2. A better performance with PCE of 8.07% is achieved when a low bandgap polymer PBDTBDD is selected as donor material. The results indicate that ZrIPO is a promising electron collection material as a substitute of the traditional low-work-function cathode for high performance PSCs.

Effects of the Molybdenum Oxide/Metal Anode Interfaces on Inverted Polymer Solar Cells

International Nuclear Information System (INIS)

Wu Jiang; Guo Xiao-Yang; Xie Zhi-Yuan

2012-01-01

Inverted polymer solar cells with molybdenum oxide (MoO 3 ) as an anode buffer layer and different metals (Al or Ag) as anodes are studied. It is found that the inverted cell with a top Ag anode demonstrates enhanced charge collection and higher power conversion efficiency (PCE) compared to the cell with a top Al anode. An 18% increment of PCE is obtained by replacing Al with Ag as the top anode. Further studies show that an interfacial dipole pointing from MoO 3 to Al is formed at MoO 3 /Al interfaces due to electron transfer from Al to MoO 3 while this phenomenon cannot be observed at MoO 3 /Ag interfaces. It is speculated that the electric field at the MoO 3 /Al interface would hinder hole extraction, and hence reduce the short-circuit current

Breathing oscillations in enlarged cylindrical-anode-layer Hall plasma accelerator

Energy Technology Data Exchange (ETDEWEB)

Geng, S. F.; Wang, C. X. [Southwestern Institute of Physics, Chengdu 610041 (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Tang, D. L.; Qiu, X. M. [Southwestern Institute of Physics, Chengdu 610041 (China); Fu, R. K. Y. [Plasma Technology Limited, Festival Walk Tower, Tat Chee Avenue, Kowloon, Hong Kong (China); Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)

2013-05-28

Breathing oscillations in the discharge of an enlarged cylindrical-anode-layer Hall plasma accelerator are investigated by three-dimensional particle-in-cell (PIC) simulation. Different from the traditional breathing mode in a circular Hall plasma accelerator, the bulk plasma oscillation here is trigged by the potential barrier generated by the concentrated ion beam and substantial enough to compete with the anode voltage. The electric field near the anode is suppressed by the potential barrier thereby decreasing the electron density by {approx}36%. The discharge is restored to the normal level after the concentrated beam explodes and then it completes one cycle of electro-driven breathing oscillation. The breathing mode identified by the PIC simulation has a frequency range of {approx}156 kHz-{approx}250 kHz and does not vary monotonically with the discharge voltage.

Influence of electrical parameters on morphology of nanostructured TiO2 layers developed by electrochemical anodization

Directory of Open Access Journals (Sweden)

Strnad Gabriela

2017-01-01

Full Text Available Ti6Al4V alloy micro rough surfaces with TiO2 self-organized nanostructured layers were synthesized using electrochemical anodization in phosphate/fluoride electrolyte, at different end potentials (5V, 10V, 15V, and 20 V. The current – time characteristics were recorded, and the link between current evolution and the morphology of developing oxide layers was investigated. On flat surfaces of Ti6Al4V alloy we developed TiO2 layers with different morphologies (random pores, nanopores of 25…50 nm, and highly organized nanotubes of 50…100 nm in diameter depending on electrical parameters of anodization process. In our anodization cell, in optimized conditions, we are able to superimpose nanostructured oxide layers (nanotubular or nanoporous over micro structured surfaces of titanium based materials used for biomedical implants.

Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

Directory of Open Access Journals (Sweden)

Atsushi Sugihara

2015-06-01

Full Text Available Mn\\(_3\\Ge has a tetragonal Heusler-like D0\\(_{22}\\ crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn\\(_3\\Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn\\(_3\\Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn\\(_3\\Ge on Rh show somewhat small coercivity (\\(H_{\\rm c}\\ = 12.6 kOe and a large perpendicular magnetic anisotropy (\\(K_{\\rm u}\\ = 11.6 Merg/cm\\(^3\\, comparable to that of the film grown on Cr.

Electronic properties of electrolyte/anodic alumina junction during porous anodizing

Energy Technology Data Exchange (ETDEWEB)

Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka Street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Jagminas, A. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany); InnoMat GmbH, Chemnitz (Germany); Goedel, Werner A. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

2007-03-15

The growth of porous oxide films on aluminum (99.99% purity), formed in 4% phosphoric acid was studied as a function of the anodizing voltage (23-53 V) using a re-anodizing technique and transmission electron microscopy (TEM) study. The chemical dissolution behavior of freshly anodized and annealed at 200 deg. C porous alumina films was studied. The obtained results indicate that porous alumina has n-type semiconductive behavior during anodizing in 4% phosphoric acid. During anodising, up to 39 V in the barrier layer of porous films, one obtains an accumulation layer (the thickness does not exceed 1 nm) where the excess electrons have been injected into the solid producing a downward bending of the conductive and valence band towards the interface. The charge on the surface of anodic oxide is negative and decreases with growing anodizing voltage. At the anodizing voltage of about 39 V, the charge on the surface of anodic oxide equals to zero. Above 39 V, anodic alumina/electrolyte junction injects protons from the electrolyte. These immobile positive charges in the surface layer of oxide together with an ionic layer of hydroxyl ions concentrated near the interface create a field, which produces an upward bending of the bands.

Dependence of magnetic properties on different buffer layers of Mn3.5Ga thin films

Science.gov (United States)

Takahashi, Y.; Sato, K.; Shima, T.; Doi, M.

2018-05-01

D022-Mn3.5Ga thin films were prepared on MgO (100) single crystalline substrates with different buffer layer (Cr, Fe, Cr/Pt and Cr/Au) using an ultra-high-vacuum electron beam vapor deposition system. From XRD patterns, a fundamental (004) peak has clearly observed for all samples. The relatively low saturation magnetization (Ms) of 178 emu/cm3, high magnetic anisotropy (Ku) of 9.1 Merg/cm3 and low surface roughness (Ra) of 0.30 nm were obtained by D022-Mn3.5Ga film (20 nm) on Cr/Pt buffer layer at Ts = 300 °C, Ta = 400 °C (3h). These findings suggest that MnGa film on Cr/Pt buffer layer is a promising PMA layer for future spin electronics devices.

Effect of Coating Parameters of the Buffer Layer on the Shape Ratio of TRISO-Coated Particles

International Nuclear Information System (INIS)

KIm, Weon Ju; Park, Jong Hoon; Park, Ji Yeon; Lee, Young Woo; Chang, Jong Hwa

2005-01-01

Fuel for high temperature gas-cooled reactors (HTGR's) consists of TRISO-coated particles. Fluidized bed chemical vapor deposition (FBCVD) has been applied to fabricate the TRISO-coated fuel particles. The TRISO particles consist of UO 2 microspheres coated with layers of porous pyrolytic carbon (PyC), inner dense PyC (IPyC), SiC, and outer dense PyC (OPyC). The porous PyC coating layer, called the buffer layer, attenuates fission recoils and provides void volume for gaseous fission products and carbon monoxide. The buffer layer, which has the highest coating rate among the coating layers, shows the largest variation of the coating thickness within a particle and a batch. This could be the most plausible source of an asphericity in the TRISO particles. The aspherical particles are expected to have an inferior fuel performance. Miller et al. have predicted that a larger stress is developed within the coating layers and thus the failure probability increases in the particles with high aspect ratios. Therefore, the shape of the TRISO-coated particles should be controlled properly and has been one of the important inspection items for the quality control of the fabrication process. In this paper, we investigated the effect of coating parameters of the buffer layer on the shape of the TRISO particles. The flow rate of coating gas and the coating temperature were varied to control the buffer layer. The asphericity of the TRISO-coated particles was evaluated for the various coating conditions of the buffer layer, but at constant coating parameters for the IPyC/SiC/OPyC layers

Simulation studies on the effect of a buffer layer on the external ...

Indian Academy of Sciences (India)

Wintec

parameters of hydrogenated amorphous silicon p–i–n solar cells ... of a buffer layer in between the p- and i-layers of the p–i–n solar cell on the external parameters such as dark .... H 1988 Photovoltaic specialist conference, in Conference re-.

Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-02-01

ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

Multi-filamentary REBCO tapes fabricated by scratching a buffer layer along the tape longitudinal direction

Energy Technology Data Exchange (ETDEWEB)

Kurihara, Chihaya, E-mail: chihaya.kurihara@jp.fujikura.com [Fujikura Ltd., 1440, Mutsuzaki, Sakura, Chiba 285-8550 (Japan); Fujita, Shinji; Nakamura, Naonori; Igarashi, Mitsunori; Iijima, Yasuhiro [Fujikura Ltd., 1440, Mutsuzaki, Sakura, Chiba 285-8550 (Japan); Higashikawa, Kohei; Uetsuhara, Dai; Kiss, Takanobu; Iwakuma, Masataka [Kyushu University, 744 Motooka, Nishi-Ku, Fukuoka 819-0395 (Japan)

2016-11-15

Highlights: • We developed new method of slitting tape between buffer layer processes for multi-filamentary tape. • By scratching buffer layer along the tape longitudinal direction, we find that REBCO layer is divided easily without damaging it. • We have developed 100 m class multi-filamentary REBCO tapes which are suitable for superconducting coils. - Abstract: A method for making multi-filamentary REBCO tapes by only scratching buffer layer was developed for coil application which requires accurate magnetic fields. By continuous I{sub c} measurement, we found that our new multi-filamentary tape could provide almost equal I{sub c} compared to conventional tapes. Then, using EBSD and RTR-SHPM methods, a divided structure of REBCO layer was surely confirmed. AC loss was also decreased. Furthermore, the result of delamination test of our new multi-filamentary tape showed enough mechanical property. As a result, we have succeeded in developing 100 m class multi-filamentary tape for superconducting coil.

Multi-filamentary REBCO tapes fabricated by scratching a buffer layer along the tape longitudinal direction

International Nuclear Information System (INIS)

Kurihara, Chihaya; Fujita, Shinji; Nakamura, Naonori; Igarashi, Mitsunori; Iijima, Yasuhiro; Higashikawa, Kohei; Uetsuhara, Dai; Kiss, Takanobu; Iwakuma, Masataka

2016-01-01

Highlights: • We developed new method of slitting tape between buffer layer processes for multi-filamentary tape. • By scratching buffer layer along the tape longitudinal direction, we find that REBCO layer is divided easily without damaging it. • We have developed 100 m class multi-filamentary REBCO tapes which are suitable for superconducting coils. - Abstract: A method for making multi-filamentary REBCO tapes by only scratching buffer layer was developed for coil application which requires accurate magnetic fields. By continuous I_c measurement, we found that our new multi-filamentary tape could provide almost equal I_c compared to conventional tapes. Then, using EBSD and RTR-SHPM methods, a divided structure of REBCO layer was surely confirmed. AC loss was also decreased. Furthermore, the result of delamination test of our new multi-filamentary tape showed enough mechanical property. As a result, we have succeeded in developing 100 m class multi-filamentary tape for superconducting coil.

Auto-compensation of ion beam in an accelerator with anode layer

International Nuclear Information System (INIS)

Bizyukov, A.A.; Kashaba, A.E.; Sereda, K.N.; Tselujko, A.F.; Yunakov, N.N.

1997-01-01

Experiments of studies on the ion beam auto-compensation are described. It is shown that in the accelerators with anode layer in the case of insulated collector there appears the auto-compensation due to excitation of additional non-independent gaseous discharge

Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers; Filmes finos de carbono depositados por meio da tecnica de magnetron sputtering usando cobalto, cobre e niquel como buffer-layers

Energy Technology Data Exchange (ETDEWEB)

Costa e Silva, Danilo Lopes

2015-11-01

In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, then, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples. (author)

Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs(001)

International Nuclear Information System (INIS)

Jayavel, P.; Nakamura, S.; Koyama, T.; Hayakawa, Y.

2006-01-01

InAsSb ternary epilayers with arsenic composition of 0.5 have been grown on GaAs(001) substrates. Linear-graded and step-graded InAsSb buffer layers with an InSb layer have been used to relax lattice mismatch between the epilayer and substrate. X-ray diffraction results of the epilayers indicate that an enhancement in the peak intensity of the buffer layer samples is due to improved crystalline quality of the epilayers. We find that the growth technique of the buffer layer strongly influences the surface morphology and roughness of the epilayer. Hall effect measurements of the step-graded buffer layer samples show an order of magnitude higher electron mobility than the direct and linear-graded buffer layer samples. These results demonstrate that high crystalline quality and electron mobility of the InAs 0.5 Sb 0.5 ternary epilayers can be achieved by using the step-graded InAsSb buffer layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ni/Ni-YSZ current collector/anode dual layer hollow fibers for micro-tubular solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Kanawka, K.; Othman, M.H.D.; Droushiotis, N.; Wu, Z.; Kelsall, G.; Li, K. [Department of Chemical Engineering and Chemical Technology, Imperial College London, London SW7 2AZ (United Kingdom)

2011-10-15

A co-extrusion technique was employed to fabricate a novel dual layer NiO/NiO-YSZ hollow fiber (HF) precursor which was then co-sintered at 1,400 C and reduced at 700 C to form, respectively, a meshed porous inner Ni current collector and outer Ni-YSZ anode layers for SOFC applications. The inner thin and highly porous ''mesh-like'' pure Ni layer of approximately 50 {mu}m in thickness functions as a current collector in micro-tubular solid oxide fuel cell (SOFC), aiming at highly efficient current collection with low fuel diffusion resistance, while the thicker outer Ni-YSZ layer of 260 {mu}m acts as an anode, providing also major mechanical strength to the dual-layer HF. Achieved morphology consisted of short finger-like voids originating from the inner lumen of the HF, and a sponge-like structure filling most of the Ni-YSZ anode layer, which is considered to be suitable macrostructure for anode SOFC system. The electrical conductivity of the meshed porous inner Ni layer is measured to be 77.5 x 10{sup 5} S m{sup -1}. This result is significantly higher than previous reported results on single layer Ni-YSZ HFs, which performs not only as a catalyst for the oxidation reaction, but also as a current collector. These results highlight the advantages of this novel dual-layer HF design as a new and highly efficient way of collecting current from the lumen of micro-tubular SOFC. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

International Nuclear Information System (INIS)

Wu, B.-R.; Liao, C.; Cheng, K. Y.

2008-01-01

High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer

International Nuclear Information System (INIS)

Pan Feng; Qian Xian-Rui; Huang Li-Zhen; Wang Hai-Bo; Yan Dong-Hang

2011-01-01

High-mobility vanadyl phthalocyanine (VOPc)/5,5‴-bis(4-fluorophenyl)-2,2':5',2″:5″,2‴-quaterthiophene (F2-P4T) thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine (F 16 CuPc)/copper phthalocyanine (CuPc) heterojunction unit, which are fabricated at different substrate temperatures, as a buffer layer. The highest mobility of 4.08cm 2 /Vs is achieved using a F 16 CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature. Compared with the random small grain-like morphology of the room-temperature buffer layer, the high-temperature organic heterojunction presents a large-sized fiber-like film morphology, resulting in an enhanced conductivity. Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained. (cross-disciplinary physics and related areas of science and technology)

Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

International Nuclear Information System (INIS)

Fong, W.K.; Ng, S.W.; Leung, B.H.; Surya, Charles

2003-01-01

We report the growth of high-mobility Si-doped GaN epilayers utilizing unique double buffer layer (DBL) structures, which consist of a thin buffer layer and a thick GaN intermediate-temperature buffer layer (ITBL). In this study, three types of DBL were investigated: (i) thin GaN low-temperature buffer layer/GaN ITBL (type I); (ii) nitridated Ga metal film/GaN ITBL (type II); and (iii) thin AlN high-temperature buffer layer/GaN ITBL (type III). Systematic measurements were conducted on the electron mobilities and the low-frequency noise over a wide range of temperatures. It is found that the electron mobilities of the GaN films are substantially improved with the use of DBLs, with the sample using type III DBL which exhibits the highest low-temperature mobility. Furthermore, the same sample also demonstrates the elimination of deep levels at 91 and 255 meV below the conduction band. This is believed to result from the relaxation of tensile stress during growth with the use of type III DBLs

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

Influence of annealing conditions on anodic tungsten oxide layers and their photoelectrochemical activity

International Nuclear Information System (INIS)

Syrek, Karolina; Zych, Marta; Zaraska, Leszek; Sulka, Grzegorz D.

2017-01-01

Highlights: • Effect of annealing temperature on the morphology and crystalline structure of anodic WO 3 was investigated. • Photoelectrochemical properties of WO 3 layers annealed at different temperatures were studied. • Edges of conduction and valence bands were estimated for tungsten oxide layers annealed at different temperatures. • Influence of annealing time on crystalline structure, morphology and photoelectrochemical performance was studied. - Abstract: The nanoporous tungsten oxide films having an amorphous structure were prepared in an electrolyte containing fluoride ions via an anodization process. The as-synthesized anodic oxide layers can be easily converted to the monoclinic WO 3 phase upon annealing in air. The as-synthesized and annealed WO 3 layers were investigated by using X-ray diffraction, scanning electron microscopy, and photocurrent spectroscopy. The effect of annealing temperature and annealing time on the oxide morphology, crystal structure and electrochemical properties were studied. The samples were annealed in air at the temperatures ranging from 400 to 600 °C, and it was found that the original porous morphology of oxide is completely lost after annealing at 600 °C. The changes in the average crystallite sizes upon annealing were confirmed by XRD measurements. The photoelectrochemical performance of the annealed WO 3 layers were studied under pulsed UV illumination, and the highest photocurrents were observed at the incident light wavelength of 350 nm for the sample annealed at 500 °C for 2 h. The band gap energy and the positions of conduction and valence band edges were determined for all studied samples.

Buffer layers and articles for electronic devices

Science.gov (United States)

Paranthaman, Mariappan P.; Aytug, Tolga; Christen, David K.; Feenstra, Roeland; Goyal, Amit

2004-07-20

Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

Sustained, Controlled and Stimuli-Responsive Drug Release Systems Based on Nanoporous Anodic Alumina with Layer-by-Layer Polyelectrolyte

Science.gov (United States)

Porta-i-Batalla, Maria; Eckstein, Chris; Xifré-Pérez, Elisabet; Formentín, Pilar; Ferré-Borrull, J.; Marsal, Lluis F.

2016-08-01

Controlled drug delivery systems are an encouraging solution to some drug disadvantages such as reduced solubility, deprived biodistribution, tissue damage, fast breakdown of the drug, cytotoxicity, or side effects. Self-ordered nanoporous anodic alumina is an auspicious material for drug delivery due to its biocompatibility, stability, and controllable pore geometry. Its use in drug delivery applications has been explored in several fields, including therapeutic devices for bone and dental tissue engineering, coronary stent implants, and carriers for transplanted cells. In this work, we have created and analyzed a stimuli-responsive drug delivery system based on layer-by-layer pH-responsive polyelectrolyte and nanoporous anodic alumina. The results demonstrate that it is possible to control the drug release using a polyelectrolyte multilayer coating that will act as a gate.

Growth and micro structural studies on Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) buffer layers

Energy Technology Data Exchange (ETDEWEB)

Srinivas, S.; Bhatnagar, A.K. [Univ. of Hyderabad (India); Pinto, R. [Solid State Electronics Group, Bombay (India)] [and others

1994-12-31

Microstructure of Yittria Stabilized Zirconia (YSZ) and Strontium Titanate (STO) of radio frequency magnetron sputtered buffer layers was studied at various sputtering conditions on Si<100>, Sapphire and LaAlO{sub 3} <100> substrates. The effect of substrate temperatures upto 800 C and sputtering gas pressures in the range of 50 mTorr. of growth conditions was studied. The buffer layers of YSZ and STO showed a strong tendency for columnar structure with variation growth conditions. The buffer layers of YSZ and STO showed orientation. The tendency for columnar growth was observed above 15 mTorr sputtering gas pressure and at high substrate temperatures. Post annealing of these films in oxygen atmosphere reduced the oxygen deficiency and strain generated during growth of the films. Strong c-axis oriented superconducting YBa{sub 2}Cu{sub 9}O{sub 7-x} (YBCO) thin films were obtained on these buffer layers using pulsed laser ablation technique. YBCO films deposited on multilayers of YSZ and STO were shown to have better superconducting properties.

A Novel Method for Fabricating Double Layers Porous Anodic Alumina in Phosphoric/Oxalic Acid Solution and Oxalic Acid Solution

Directory of Open Access Journals (Sweden)

Yanfang Xu

2016-01-01

Full Text Available A novel method for fabricating ordered double layers porous anodic alumina (DL-PAA with controllable nanopore size was presented. Highly ordered large pore layer with interpore distance of 480 nm was fabricated in phosphoric acid solution with oxalic acid addition at the potential of 195 V and the small pore layer was fabricated in oxalic acid solution at the potential from 60 to 100 V. Experimental results show that the thickness of large pore layer is linearly correlative with anodizing time, and pore diameter is linearly correlative with pore widening time. When the anodizing potential in oxalic acid solution was adjusted from 60 to 100 V, the small pore layers with continuously tunable interpore distance from 142 to 241 nm and pore density from 1.94×109 to 4.89×109 cm−2 were obtained. And the interpore distance and the pore density of small pore layers are closely correlative with the anodizing potential. The fabricated DL-PAA templates can be widely utilized for fabrication of ordered nanomaterials, such as superhydrophobic or gecko-inspired adhesive materials and metal or semiconductor nanowires.

Influence of an electric probe on the anode layer of a glow discharge in nitrogen

Science.gov (United States)

Taran, M. D.; Dyatko, N. A.; Kochetov, I. V.; Napartovich, A. P.; Akishev, Yu S.

2018-05-01

A two-dimensional (2D) numerical model of a DC glow discharge in nitrogen is developed for the case when the electric probe is mounted in the discharge gap. Within this model, calculations are performed for the gas pressure of 50 Torr and discharge current densities of 22 and 90 mA cm‑2. A cylindrical probe 1 mm in diameter is located parallel to the anode at a distance of 5 or 10 mm. The probe potential is varied in a wide range relative to the floating potential. Numerical simulations predict the 2D plasma perturbation pattern induced by the electric probe and the influence of the probe on anode layer characteristics. In particular, conditions are determined under which a region with no glow forms in the anode layer.

Optimization of the buffer layer of a side polished fiber slab coupler based on 3 D ADI beam propagation method

International Nuclear Information System (INIS)

Lee, Cherl Hee; Kim, Cheol; Park, Jae Hee

2008-01-01

A side polished fiber slab coupler has been widely applied to a sensor, which has the advantages of short response time, simple manufacturing process, and reusability as well as in line fiber component. A new type of a side polished fiber sensor providing remote sensing with an improved performance was also recently developed. The side polished fiber slab coupler is modeled as a fiber to planar waveguide coupler with four layers, including the fiber cladding, a buffer layer, planar waveguide and overlay material. The coupling effects by the buffer layer of a side polished fiber slab coupler are analyzed by using 3 dimensional alternating direction implicit (ADI)beam propagation method, where the refractive index and thickness of the buffer layer were tuned for efficient light coupling. The coupling is easily tuned and more occurred by the refractive index and thickness of the buffer layer for efficient coupling. This study tried to optimize the buffer layer parameters for achieving the desired light coupling and power transfer performance

Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers

International Nuclear Information System (INIS)

Costa e Silva, Danilo Lopes

2015-01-01

In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, then, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples. (author)

Cooptimization of Adhesion and Power Conversion Efficiency of Organic Solar Cells by Controlling Surface Energy of Buffer Layers.

Science.gov (United States)

Lee, Inhwa; Noh, Jonghyeon; Lee, Jung-Yong; Kim, Taek-Soo

2017-10-25

Here, we demonstrate the cooptimization of the interfacial fracture energy and power conversion efficiency (PCE) of poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT)-based organic solar cells (OSCs) by surface treatments of the buffer layer. The investigated surface treatments of the buffer layer simultaneously changed the crack path and interfacial fracture energy of OSCs under mechanical stress and the work function of the buffer layer. To investigate the effects of surface treatments, the work of adhesion values were calculated and matched with the experimental results based on the Owens-Wendt model. Subsequently, we fabricated OSCs on surface-treated buffer layers. In particular, ZnO layers treated with poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) simultaneously satisfied the high mechanical reliability and PCE of OSCs by achieving high work of adhesion and optimized work function.

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

Energy Technology Data Exchange (ETDEWEB)

Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Zhonghua; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

2016-12-01

Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

International Nuclear Information System (INIS)

Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

2016-01-01

Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

Performance improvement of MEH-PPV:PCBM solar cells using bathocuproine and bathophenanthroline as the buffer layers

International Nuclear Information System (INIS)

Liu Xiao Dong; Zhao Su-Ling; Xu Zheng; Zhang Fu-Jun; Zhang Tian-Hui; Gong Wei; Yan Guang; Kong Chao; Wang Yong-Sheng; Xu Xu-Rong

2011-01-01

In this work, bathocuproine (BCP) and bathophenanthroline (Bphen), commonly used in small-molecule organic solar cells (OSCs), are adopted as the buffer layers to improve the performance of the polymer solar cells (PSCs) based on poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV): [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-nm BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen (i) increasing the optical field, and hence the absorption in the active layer, (ii) effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum (Al) interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance (R s ), and (iii) preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode. (interdisciplinary physics and related areas of science and technology)

Cube textured CeO2, BaZrO3 and LaAlO3 buffer layers on Ni based Substrates

International Nuclear Information System (INIS)

Deinhofer, C; Gritzner, G

2006-01-01

CeO 2 , BaZrO 3 as well as LaAlO 3 buffer layers were deposited on {100} Ni + 5 weight-% W substrates by a wet chemical technique. The solutions were prepared by dissolving the metal nitrates or acetates and zirconiumacetylacetonate, respectively, in mixtures of acetic acid, methanol and water. The solutions were applied by dip- or spincoating, dried at 135 deg. C and annealed at temperatures between 900 and 1 400 deg. C depending on the buffer layer for 15 min. under Ar-5% H 2 gas flow. Pole-figure measurements proved the exact texture of each buffer layer. Electron microscopy showed dense and smooth buffer layers

Semitransparent Flexible Organic Solar Cells Employing Doped-Graphene Layers as Anode and Cathode Electrodes.

Science.gov (United States)

Shin, Dong Hee; Jang, Chan Wook; Lee, Ha Seung; Seo, Sang Woo; Choi, Suk-Ho

2018-01-31

Semitransparent flexible photovoltaic cells are advantageous for effective use of solar energy in many areas such as building-integrated solar-power generation and portable photovoltaic chargers. We report semitransparent and flexible organic solar cells (FOSCs) with high aperture, composed of doped graphene layers, ZnO, P3HT:PCBM, and PEDOT:PSS as anode/cathode transparent conductive electrodes (TCEs), electron transport layer, photoactive layer, and hole transport layer, respectively, fabricated based on simple solution processing. The FOSCs do not only harvest solar energy from ultraviolet-visible region but are also less sensitive to near-infrared photons, indicating semitransparency. For the anode/cathode TCEs, graphene is doped with bis(trifluoromethanesulfonyl)-amide or triethylene tetramine, respectively. Power conversion efficiency (PCE) of 3.12% is obtained from the fundamental FOSC structure, and the PCE is further enhanced to 4.23% by adding an Al reflective mirror on the top or bottom side of the FOSCs. The FOSCs also exhibit remarkable mechanical flexibilities through bending tests for various curvature radii.

Copper variation in Cu(In,Ga)Se{sub 2} solar cells with indium sulphide buffer layer

Energy Technology Data Exchange (ETDEWEB)

Spiering, S., E-mail: stefanie.spiering@zsw-bw.de [Zentrum für Sonnenenergie- und Wasserstoff-Forschung (ZSW) Baden-Wuerttemberg, Industriestrasse 6, 70565 Stuttgart (Germany); Paetel, S.; Kessler, F. [Zentrum für Sonnenenergie- und Wasserstoff-Forschung (ZSW) Baden-Wuerttemberg, Industriestrasse 6, 70565 Stuttgart (Germany); Igalson, M.; Abdel Maksoud, H. [Warsaw University of Technology (WUT), Faculty of Physics, Koszykowa 75, 00-662 Warszawa (Poland)

2015-05-01

In the manufacturing of Cu(In,Ga)Se{sub 2} (CIGS) thin film solar cells the application of a buffer layer on top of the absorber is essential to obtain high efficiency devices. Regarding the roll-to-roll production of CIGS cells and modules a vacuum deposition process for the buffer is preferable to the conventional cadmium sulphide buffer deposited in a chemical bath. Promising results have already been achieved for the deposition of indium sulphide buffer by different vacuum techniques. The solar device performance is very sensitive to the conditions at the absorber-buffer heterojunction. In view of optimization we investigated the influence of the Cu content in the absorber on the current-voltage characteristics. In this work the integral copper content was varied between 19 and 23 at.% in CIGS on glass substrates. An improvement of the cell performance by enhanced open circuit voltage was observed for a reduction to ~ 21 at.% when thermally evaporated indium sulphide was applied as the buffer layer. The influence of stoichiometry deviations on the transport mechanism and secondary barriers in the device was studied using detailed dark and light current-voltage analysis and admittance spectroscopy and compared to the reference CdS-buffered cells. We conclude that the composition of the absorber in the interface region affects current transport in In{sub x}S{sub y}-buffered and CdS-buffered cells in different ways hence optimal Cu content in those two types of devices is different. - Highlights: • Influence of Cu-variation in CIGS cells with In{sub x}S{sub y} buffer layer on cell performance • Enhanced efficiency by slight reduction of Cu-content to 21 at.% • Contribution of tunnelling-enhanced interface recombination for higher Cu-content.

Dependence of Magnetic Properties of Co/Pt Multilayers on Deposition Temperature of Pt Buffer Layers

Science.gov (United States)

Shiomi, Shigeru; Nishimura, Tomotaka; Kobayashi, Tadashi; Masuda, Morio

1993-04-01

A 15-nm-thick Pt buffer layer was deposited on a glass slide at temperature Ts(Ptbuf) ranging from 30 to 300°C by e-gun evaporation. Following the cooling in vacuum to ambient temperature, Co and Pt layers have been alternately deposited on it. Very large perpendicular anisotropy and coercivity have been obtained at Ts(Ptbuf) higher than 200°C. The (111) preferred orientation of the Co/Pt multilayer as well as the Pt buffer layer became more pronounced with elevating Ts(Ptbuf), to which the enhancement of perpendicular anisotropy with elevating Ts(Ptbuf) might be ascribable.

High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

Directory of Open Access Journals (Sweden)

Wei-Cheng Kuo

2016-01-01

Full Text Available We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD at low growth temperature (180°C. The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD and spectroscopy ellipsometry (SE. The full width at half maximum (FWHM of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.

Investigation of CeO2 Buffer Layer Effects on the Voltage Response of YBCO Transition-Edge Bolometers

DEFF Research Database (Denmark)

Mohajeri, Roya; Nazifi, Rana; Wulff, Anders Christian

2016-01-01

The effect on the thermal parameters of superconducting transition-edge bolometers produced on a single crystalline SrTiO3 (STO) substrate with and without a CeO2 buffer layer was investigated. Metal-organic deposition was used to deposit the 20-nm CeO2 buffer layer, whereas RF magnetron sputtering...

Enhancement of organic light-emitting device performances with Hf-doped indium tin oxide anodes

International Nuclear Information System (INIS)

Chen, T.-H.; Liou, Y.; Wu, T.J.; Chen, J.Y.

2004-01-01

We have enhanced the luminance and the power efficiency of organic light-emitting devices with Hf-doped indium tin oxide (ITO) anodes instead of a CuPc layer. The Hf-doped ITO layer with a thickness of 15 nm was deposited on top of the ITO anode. Less than 10 mol. % of Hf was doped in ITO films by adjusting the sputtering rates of both sources. The highest work function of the Hf-doped ITO layers was 5.4 eV at the Hf concentrations about 10 mol. %. The driving voltages of the device have been reduced by 1 V. A luminance of 1000 cd/m 2 at 7 mA/cm 2 , a current efficiency of 14 cd/A, and a power efficiency of 6 lm/W at 6 mA/cm 2 have been achieved in the device with a 4 mol. % Hf-doped ITO layer (work function=5.2 eV). In general, the performance was about 50% better than the device with a CuPc buffer layer

Electrically conducting oxide buffer layers on biaxially textured nickel alloy tapes by reel-to-reel MOCVD process

International Nuclear Information System (INIS)

Stadel, O; Samoilenkov, S V; Muydinov, R Yu; Schmidt, J; Keune, H; Wahl, G; Gorbenko, O Yu; Korsakov, I E; Melnikov, O V; Kaul, A R

2006-01-01

Reel-to-reel MOCVD process for continuous growth of electrically conducting buffer layers on biaxially textured Ni5W tapes has been developed. The new buffer layer architechture is presented: 200 nm (La, Ba) 2 CuO 4 /40 nm (La, Ba)MnO 3 /Ni5W. Constituting layers with high structural quality have been grown on moving tapes (in plane FWHM ≤ 6 0 and out of plane FWHM ≤ 3 0 )

Cobalt nanosheet arrays supported silicon film as anode materials for lithium ion batteries

International Nuclear Information System (INIS)

Huang, X.H.; Wu, J.B.; Cao, Y.Q.; Zhang, P.; Lin, Y.; Guo, R.Q.

2016-01-01

Cobalt nanosheet arrays supported silicon film is prepared and used as anode materials for lithium ion batteries. The film is fabricated using chemical bath deposition, hydrogen reduction and radio-frequency magnetron sputtering techniques. The microstructure and morphology are characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). In this composite film, the silicon layer is supported by interconnected aligned cobalt nanosheet arrays that act as the three-dimensional current collector and buffering network. The electrochemical performance as anode materials for lithium ion batteries is investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results show that the film prepared by sputtering for 1500 s exhibits high capacity, good rate capability and stable cycle ability. It is believed that the cobalt nanosheet arrays play important roles in the electrochemical performance of the silicon layer.

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

Science.gov (United States)

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

2015-05-26

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

Anodic characteristics and stress corrosion cracking behavior of nickel rich alloys in bicarbonate and buffer solutions

International Nuclear Information System (INIS)

Zadorozne, Natalia S.; Giordano, Mabel C.; Ares, Alicia E.; Carranza, Ricardo M.; Rebak, Raul B.

2016-01-01

Highlights: • We investigate which element in alloy C-22 may be responsible for the cracking susceptibility of the high nickel alloy. • Six nickel based alloys with different amount of Cr and Mo were selected for the electrochemical tests and response to SSRT. • Polarization tests showed that an anodic peak appear in the passive region in Cr containing alloys. • Cracking of Ni alloys in carbonate solutions seem to be a consequence of the instability of the passivating chromium oxide. • Alloys containing both Cr and Mo have the highest susceptibility. - Abstract: The aim of this work is to investigate which alloying element in C-22 is responsible for the cracking susceptibility of the alloy in bicarbonate and two buffer solutions (tungstate and borate). Six nickel based alloys, with different amount of chromium (Cr) and molybdenum (Mo) were tested using electrochemical methods and slow strain rate tests (SSRT) at 90 °C. All Cr containing alloys had transgranular cracking at high anodic potential; however, C-22 containing high Cr and high Mo was the most susceptible alloy to cracking. Bicarbonate was the most aggressive of three tested environments of similar pH.

Sol-gel deposition of buffer layers on biaxially textured metal substances

Science.gov (United States)

Shoup, Shara S.; Paranthamam, Mariappan; Beach, David B.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

A method is disclosed for forming a biaxially textured buffer layer on a biaxially oriented metal substrate by using a sol-gel coating technique followed by pyrolyzing/annealing in a reducing atmosphere. This method is advantageous for providing substrates for depositing electronically active materials thereon.

Enhanced Optical and Electrical Properties of TiO_2 Buffered IGZO/TiO_2 Bi-Layered Films

International Nuclear Information System (INIS)

Moon, Hyun-Joo; Kim, Daeil

2016-01-01

In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO_2-deposited glass substrate to determine the effect of the thickness of a thin TiO_2 buffer layer on the structural, optical, and electrical properties of the films. The thicknesses of the TiO_2 buffer layers were 5, 10 and 15 nm, respectively. As-deposited IGZO films with a 10 nm-thick TiO_2 buffer layer had an average optical transmittance of 85.0% with lower resistivity (1.83×10-2 Ω cm) than that of IGZO single layer films. The figure of merit (FOM) reached a maximum of 1.44×10-4 Ω-1 for IGZO/10 nm-thick TiO_2 bi-layered films, which is higher than the FOM of 6.85×10-5 Ω-1 for IGZO single layer films. Because a higher FOM value indicates better quality transparent conducting oxide (TCO) films, the IGZO/10 nm-thick TiO_2 bi-layered films are likely to perform better in TCO applications than IGZO single layer films.

ZnO buffer layer for metal films on silicon substrates

Science.gov (United States)

Ihlefeld, Jon

2014-09-16

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

A mesoporous WO3−X/graphene composite as a high-performance Li-ion battery anode

International Nuclear Information System (INIS)

Liu, Fei; Kim, Jong Gu; Lee, Chul Wee; Im, Ji Sun

2014-01-01

Graphical abstract: The highly flexible and conductive graphene layer can enhance electron transfer, protect metal oxides against disintegration and aggregation and buffer the strain induced by volume expansion during cycles. The mesoporous surface layer provides an open network for Li+ diffusion. - Highlights: • Novel cocktail effects of 2D mesoporous WO 3−X /graphene for lithium ion battery. • New approach for lithium ion battery by easy and unique synthesis method. • Mechanism study with proper data for understanding a reaction on anode surface. - Abstract: A novel mesoporous WO 3−X /graphene composite was developed. This material allowed rapid electron and Li + ion diffusion when used as a Li-ion battery (LIB) anode material. Remarkably, the graphene support protected WO 3−X from changing volume during the electrochemical cycling process; this process generally induces capacity loss. The current work describes a high-performance anode material for LIB that has highly dense WO 3−X , as well as high capacity, rate capability and stability

Semi-insulating Sn-Zr-O: Tunable resistance buffer layers

Energy Technology Data Exchange (ETDEWEB)

Barnes, Teresa M.; Burst, James M.; Reese, Matthew O.; Perkins, Craig L. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2015-03-02

Highly resistive and transparent (HRT) buffer layers are critical components of solar cells and other opto-electronic devices. HRT layers are often undoped transparent conducting oxides. However, these oxides can be too conductive to form an optimal HRT. Here, we present a method to produce HRT layers with tunable electrical resistivity, despite the presence of high concentrations of unintentionally or intentionally added dopants in the film. This method relies on alloying wide-bandgap, high-k dielectric materials (e.g., ZrO{sub 2}) into the host oxide to tune the resistivity. We demonstrate Sn{sub x}Zr{sub 1−x}O{sub 2}:F films with tunable resistivities varying from 0.001 to 10 Ω cm, which are controlled by the Zr mole fraction in the films. Increasing Zr suppresses carriers by expanding the bandgap almost entirely by shifting the valence-band position, which allows the HRT layers to maintain good conduction-band alignment for a low-resistance front contact.

Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells

NARCIS (Netherlands)

Frijters, C.H.; Poodt, P.; Illeberi, A.

2016-01-01

Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD combines high deposition rates (up to nm/s) with the advantages of conventional ALD, i.e. excellent control of film composition and superior

Effect of a gate buffer layer on the performance of a 4H-SiC Schottky barrier field-effect transistor

International Nuclear Information System (INIS)

Zhang Xianjun; Yang Yintang; Chai Changchun; Duan Baoxing; Song Kun; Chen Bin

2012-01-01

A lower doped layer is inserted between the gate and channel layer and its effect on the performance of a 4H-SiC Schottky barrier field-effect transistor (MESFET) is investigated. The dependences of the drain current and small signal parameters on this inserted gate-buffer layer are obtained by solving one-dimensional (1-D) and two-dimensional (2-D) Poisson's equations. The drain current and small signal parameters of the 4H-SiC MESFET with a gate-buffer layer thickness of 0.15 μm are calculated and the breakdown characteristics are simulated. The results show that the current is increased by increasing the thickness of the gate-buffer layer; the breakdown voltage is 160 V, compared with 125 V for the conventional 4H-SiC MESFET; the cutoff frequency is 27 GHz, which is higher than 20 GHz of the conventional structure due to the lower doped gate-buffer layer. (semiconductor devices)

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

Science.gov (United States)

Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

2017-07-21

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Characteristics of the low power cylindrical anode layer ion source

International Nuclear Information System (INIS)

Zhao Jie; Tang Deli; Cheng Changming; Geng Shaofei

2009-01-01

A low power cylindrical anode layer ion source and its working characteristic, and the beam distribution are introduced. This ion source has two working states, emanative state and collimated state, and the normal parameters of this system are: working voltage 200-1200 V, discharge current 0.1-1.4A, air pressure 1.9 x 10 -2 -1.7 x 10 -1 Pa, gas flow 5-20 sccm. (authors)

Microstructural characterization of chemical bath deposited and sputtered Zn(O,S) buffer layers

International Nuclear Information System (INIS)

Gautron, E.; Buffière, M.; Harel, S.; Assmann, L.; Arzel, L.; Brohan, L.; Kessler, J.; Barreau, N.

2013-01-01

The present work aims at investigating the microstructure of Zn(O,S) buffer layers relative to their deposition route, namely either chemical bath deposition (CBD) or RF co-sputtering process (PVD) under pure Ar. The core of the study consists of cross-sectional transmission electron microscopy (TEM) characterization of the differently grown Zn(O,S) thin films on co-evaporated Cu(In,Ga)Se 2 (CIGSe) absorbers. It shows that the morphology of Zn(O,S) layer deposited on CIGSe using CBD process is made of a thin layer of well oriented ZnS sphalerite-(111) and/or ZnS wurtzite-(0002) planes parallel to CIGSe chalcopyrite-(112) planes at the interface with CIGSe followed by misoriented nanometer-sized ZnS crystallites in an amorphous phase. As far as (PVD)Zn(O,S) is concerned, the TEM analyses reveal two different microstructures depending on the S-content in the films: for [S] / ([O] + [S]) = 0.6, the buffer layer is made of ZnO zincite and ZnS wurtzite crystallites grown nearly coherently to each other, with (0002) planes nearly parallel with CIGSe-(112) planes, while for [S] / ([O] + [S]) = 0.3, it is made of ZnO zincite type crystals with O atoms substituted by S atoms, with (0002) planes perfectly aligned with CIGSe-(112) planes. Such microstructural differences can explain why photovoltaic performances are dependent on the Zn(O,S) buffer layer deposition route. - Highlights: ► Zn(O,S) layers were grown by chemical bath (CBD) or physical vapor (PVD) deposition. ► For CBD, a 3 nm ZnS layer is followed by ZnS nano-crystallites in an amorphous phase. ► For PVD with [S] / ([O] + [S]) = 0.3, the layer has a Zn(O,S) zincite structure. ► For PVD with [S] / ([O] + [S]) = 0.6, ZnS wurtzite and ZnO zincite phases are mixed

Influence of the anodic etching current density on the morphology of the porous SiC layer

Directory of Open Access Journals (Sweden)

Anh Tuan Cao

2014-03-01

Full Text Available In this report, we fabricated a porous layer in amorphous SiC thin films by using constant-current anodic etching in an electrolyte of aqueous diluted hydrofluoric acid. The morphology of the porous amorphous SiC layer changed as the anodic current density changed: At low current density, the porous layer had a low pore density and consisted of small pores that branched downward. At moderate current density, the pore size and depth increased, and the pores grew perpendicular to the surface, creating a columnar pore structure. At high current density, the porous structure remained perpendicular, the pore size increased, and the pore depth decreased. We explained the changes in pore size and depth at high current density by the growth of a silicon oxide layer during etching at the tips of the pores.

Growth modes of InN (000-1) on GaN buffer layers on sapphire

International Nuclear Information System (INIS)

Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

2005-01-01

In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

Structure and magnetic properties of NdFeB thin films with Cr, Mo, Nb, Ta, Ti, and V buffer layers

International Nuclear Information System (INIS)

Jiang, H.; O'Shea, M.J.

2000-01-01

Layers of NdFeB of the form A(20 nm)/NdFeB(d nm)/A(20 nm) where A represents Cr, Mo, Nb, Ta, Ti, V were prepared on a silicon substrate by magnetron sputtering. The purpose is to determine how (i) the chosen buffer layer and (ii) NdFeB layer thickness d (especially d 2 Fe 14 B with no preferred crystalline orientation. Our highest coercivities occur for buffer layer elements from row five of the periodic table, 20 kOe (1600 kA/m) in a Nb buffered sample with d of 180 nm and 17 kOe (1350 kA/m) in a Mo buffered sample with d of 180 nm. Buffer layers from row four (Ti, V, and Cr) and row six (Ta) all give lower coercivities. Our largest energy product, 10.3 MG-Oe (82 kJ/m 3 ), is obtained for the Mo buffered sample. Average Nd 2 Fe 14 B crystallite size for this sample is 27 nm. Only the Cr and Ti buffered films show a large coercivity (≥2 kOe) for d of 54 nm with the Cr films showing the highest coercivity, 2.7 kOe (215 kA/m). In films subjected to a rapid thermal anneal (anneal time 30 s) we find that both the coercivity and energy product are larger than in samples subjected to a 20 min anneal. In our Nb buffered systems we obtain coercivities as high as 26.3 kOe (2090 kA/m) after a rapid thermal anneal

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Energy Technology Data Exchange (ETDEWEB)

Li, X.; Nilsson, D.; Danielsson, Ö.; Pedersen, H.; Janzén, E.; Forsberg, U. [Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping 58183 (Sweden); Bergsten, J.; Rorsman, N. [Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg 41296 (Sweden)

2015-12-28

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement shows a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.

Electrochemical detection of copper ions leached from CuO nanoparticles in saline buffers and biological media using a gold wire working electrode

Energy Technology Data Exchange (ETDEWEB)

Baldisserri, Carlo, E-mail: carlo.baldisserri@istec.cnr.it; Costa, Anna Luisa [ISTEC-CNR (Italy)

2016-04-15

We performed explorative cyclic voltammetry in phosphate-buffered saline buffers, Dulbecco’s modified Eagle’s medium (DMEM), and fetal bovine serum-added DMEM using Au wire as working electrode, both in the absence and in the presence of known nominal concentrations of Cu{sup 2+} ions or 15 nm CuO nanoparticles. Addition of either Cu{sup 2+} ions or aqueous suspension of CuO nanoparticles caused a single anodic peak to appear in the double-layer region of all three pristine media. The height of the anodic peak was found to increase in a monotonic fashion vs. Cu{sup 2+} concentration in Cu{sup 2+}-added media, and versus time since CuO addition in CuO-added media. Stepwise addition of glycine to Cu{sup 2+}-added phosphate-buffered saline buffer caused an increasing cathodic shift of the anodic peak accompanied by decreasing peak currents. Results indicate that preparing Cu{sup 2+}-free suspensions of CuO nanoparticles in such media is difficult, owing to the presence of leached copper ions. The implications on results of experiments in which CuO nanoparticle-added biological media are used as cell culture substrates are discussed. Literature data on the interactions between Cu{sup 2+} ions, dissolved carbon dioxide in aqueous CuO suspensions, and amino acids present in such media are compared to our results.

Electrochemical detection of copper ions leached from CuO nanoparticles in saline buffers and biological media using a gold wire working electrode

Science.gov (United States)

Baldisserri, Carlo; Costa, Anna Luisa

2016-04-01

We performed explorative cyclic voltammetry in phosphate-buffered saline buffers, Dulbecco's modified Eagle's medium (DMEM), and fetal bovine serum-added DMEM using Au wire as working electrode, both in the absence and in the presence of known nominal concentrations of Cu2+ ions or 15 nm CuO nanoparticles. Addition of either Cu2+ ions or aqueous suspension of CuO nanoparticles caused a single anodic peak to appear in the double-layer region of all three pristine media. The height of the anodic peak was found to increase in a monotonic fashion vs. Cu2+ concentration in Cu2+-added media, and versus time since CuO addition in CuO-added media. Stepwise addition of glycine to Cu2+-added phosphate-buffered saline buffer caused an increasing cathodic shift of the anodic peak accompanied by decreasing peak currents. Results indicate that preparing Cu2+-free suspensions of CuO nanoparticles in such media is difficult, owing to the presence of leached copper ions. The implications on results of experiments in which CuO nanoparticle-added biological media are used as cell culture substrates are discussed. Literature data on the interactions between Cu2+ ions, dissolved carbon dioxide in aqueous CuO suspensions, and amino acids present in such media are compared to our results.

Glycine buffered synthesis of layered iron(II)-iron(III) hydroxides (green rusts)

DEFF Research Database (Denmark)

Yin, Weizhao; Huang, Lizhi; Pedersen, Emil Bjerglund

2017-01-01

Layered Fe(II)-Fe(III) hydroxides (green rusts, GRs) are efficient reducing agents against oxidizing contaminants such as chromate, nitrate, selenite, and nitroaromatic compounds and chlorinated solvents. In this study, we adopted a buffered precipitation approach where glycine (GLY) was used...

Development of Plasma-Sprayed Molybdenum Carbide-Based Anode Layers with Various Metal Oxides for SOFC

Science.gov (United States)

Faisal, N. H.; Ahmed, R.; Katikaneni, S. P.; Souentie, S.; Goosen, M. F. A.

2015-12-01

Air plasma-sprayed (APS) coatings provide an ability to deposit a range of novel fuel cell materials at competitive costs. This work develops three separate types of composite anodes (Mo-Mo2C/Al2O3, Mo-Mo2C/ZrO2, Mo-Mo2C/TiO2) using a combination of APS process parameters on Hastelloy®X for application in intermediate temperature proton-conducting solid oxide fuel cells. Commercially available carbide of molybdenum powder catalyst (Mo-Mo2C) and three metal oxides (Al2O3, ZrO2, TiO2) was used to prepare three separate composite feedstock powders to fabricate three different anodes. Each of the modified composition anode feedstock powders included a stoichiometric weight ratio of 0.8:0.2. The coatings were characterized by scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction, nanoindentation, and conductivity. We report herein that three optimized anode layers of thicknesses between 200 and 300 µm and porosity as high as 20% for Mo-Mo2C/Al2O3 (250-µm thick) and Mo-Mo2C/TiO2 (300 µm thick) and 17% for Mo-Mo2C/ZrO2 (220-µm thick), controllable by a selection of the APS process parameters with no addition of sacrificial pore-forming material. The nanohardness results indicate the upper layers of the coatings have higher values than the subsurface layers in coatings with some effect of the deposition on the substrate. Mo-Mo2C/ZrO2 shows high electrical conductivity.

Morphology control of anodic ZrO2 layer for the prevention of H2 production from Zr-4 cladding

Energy Technology Data Exchange (ETDEWEB)

Park, Y. J.; Park, J. W.; Cho, S. O. [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

2014-05-15

Since the Fukushima disaster happened, studies on accident-resistant nuclear fuel has been carried out actively. There has been an attempt to protect zircaloy fuel cladding by coating SiC. Research on producing oxide layer that can block fuel cladding from water on the surface of zircaloy fuel cladding by means of anodizing to reduce the rate of oxidation of fuel cladding at Loss Of Coolant Accident (LOCA) is an significant ongoing study subject. Applying nanostructured oxide layer to the prevention of thermal deformation of oxide layer was already suggested in our research group, the reasons of which is nanoporous structure is better than nanotube structure in terms of corrosion-resistant structure because nanotube structure can be easily peeled off. In this study, methods which are able to control morphology between nanoporous and nanotube structure were conducted by changing the anodizing conditions. Hence, Using glycerol and ammonium fluoride, Zircaloy-4 was anodized by varying water contents and applied voltage. It reveals that the alloy transition from nanoporous structure to nanotube structure can be changed by varying water contents of anodizing solution and applied voltage. Anodizing conditions determining nanoporous structure were obtained. According to the mechanism already suggested, nanoporous oxide layer that can seal the fuel cladding perfectly, and increase critical heat flux (CHF) due to large surface area is easily produced. This results obtained in this paper expected to be facilitated fabrication of accident-resistant nuclear fuel cladding.

Two-Dimensional SnO Anodes with a Tunable Number of Atomic Layers for Sodium Ion Batteries

KAUST Repository

Zhang, Fan; Zhu, Jiajie; Zhang, Daliang; Schwingenschlö gl, Udo; Alshareef, Husam N.

2017-01-01

We have systematically changed the number of atomic layers stacked in 2D SnO nanosheet anodes and studied their sodium ion battery (SIB) performance. The results indicate that as the number of atomic SnO layers in a sheet decreases, both

A Flexible Solid Electrolyte Interphase Layer for Long-Life Lithium Metal Anodes.

Science.gov (United States)

Li, Nian-Wu; Shi, Yang; Yin, Ya-Xia; Zeng, Xian-Xiang; Li, Jin-Yi; Li, Cong-Ju; Wan, Li-Jun; Wen, Rui; Guo, Yu-Guo

2018-02-05

Lithium (Li) metal is a promising anode material for high-energy density batteries. However, the unstable and static solid electrolyte interphase (SEI) can be destroyed by the dynamic Li plating/stripping behavior on the Li anode surface, leading to side reactions and Li dendrites growth. Herein, we design a smart Li polyacrylic acid (LiPAA) SEI layer high elasticity to address the dynamic Li plating/stripping processes by self-adapting interface regulation, which is demonstrated by in situ AFM. With the high binding ability and excellent stability of the LiPAA polymer, the smart SEI can significantly reduce the side reactions and improve battery safety markedly. Stable cycling of 700 h is achieved in the LiPAA-Li/LiPAA-Li symmetrical cell. The innovative strategy of self-adapting SEI design is broadly applicable, providing opportunities for use in Li metal anodes. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

Directory of Open Access Journals (Sweden)

Chang-Ju Lee

2017-07-01

Full Text Available The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa−xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1−xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10−2 A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Amorphous TiO2 Shells: A Vital Elastic Buffering Layer on Silicon Nanoparticles for High-Performance and Safe Lithium Storage.

Science.gov (United States)

Yang, Jianping; Wang, Yunxiao; Li, Wei; Wang, Lianjun; Fan, Yuchi; Jiang, Wan; Luo, Wei; Wang, Yang; Kong, Biao; Selomulya, Cordelia; Liu, Hua Kun; Dou, Shi Xue; Zhao, Dongyuan

2017-12-01

Smart surface coatings of silicon (Si) nanoparticles are shown to be good examples for dramatically improving the cyclability of lithium-ion batteries. Most coating materials, however, face significant challenges, including a low initial Coulombic efficiency, tedious processing, and safety assessment. In this study, a facile sol-gel strategy is demonstrated to synthesize commercial Si nanoparticles encapsulated by amorphous titanium oxide (TiO 2 ), with core-shell structures, which show greatly superior electrochemical performance and high-safety lithium storage. The amorphous TiO 2 shell (≈3 nm) shows elastic behavior during lithium discharging and charging processes, maintaining high structural integrity. Interestingly, it is found that the amorphous TiO 2 shells offer superior buffering properties compared to crystalline TiO 2 layers for unprecedented cycling stability. Moreover, accelerating rate calorimetry testing reveals that the TiO 2 -encapsulated Si nanoparticles are safer than conventional carbon-coated Si-based anodes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

Directory of Open Access Journals (Sweden)

Md. Billal Hosen

2017-10-01

Full Text Available This article represents the baseline data of the several semiconductor materials used in the model of a CIGS thin film solar cell with an inclusion of ZnS buffer layer. As well, input parameters, contact layer data and operating conditions for CIGS solar cell simulation with ZnS buffer layer have been described. The schematic diagram of photovoltaic solar cell has been depicted. Moreover, the most important performance measurement graph, J-V characteristic curve, resulting from CIGS solar cell simulation has been analyzed to estimate the optimum values of fill factor and cell efficiency. These optimum results have been obtained from the open circuit voltage, short circuit current density, and the maximum points of voltage and current density generated from the cell.

The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

2012-01-01

The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

Science.gov (United States)

Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

2018-05-01

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions

DEFF Research Database (Denmark)

Chen, Yunzhong; Green, Robert J.; Sutarto, Ronny

2017-01-01

Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO3 (STO) achieved using polar La7/8Sr1/8MnO3 (LSMO) buffer layers to manipulate both...... polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant x-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how...... these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer...

Modification of SnO2 Anodes by Atomic Layer Deposition for High Performance Lithium Ion Batteries

KAUST Repository

Yesibolati, Nulati

2013-05-01

Tin dioxide (SnO2) is considered one of the most promising anode materials for Lithium ion batteries (LIBs), due to its large theoretical capacity and natural abundance. However, its low electronic/ionic conductivities, large volume change during lithiation/delithiation and agglomeration prevent it from further commercial applications. In this thesis, we investigate modified SnO2 as a high energy density anode material for LIBs. Specifically two approaches are presented to improve battery performances. Firstly, SnO2 electrochemical performances were improved by surface modification using Atomic Layer Deposition (ALD). Ultrathin Al2O3 or HfO2 were coated on SnO2 electrodes. It was found that electrochemical performances had been enhanced after ALD deposition. In a second approach, we implemented a layer-by-layer (LBL) assembled graphene/carbon-coated hollow SnO2 spheres as anode material for LIBs. Our results indicated that the LBL assembled electrodes had high reversible lithium storage capacities even at high current densities. These superior electrochemical performances are attributed to the enhanced electronic conductivity and effective lithium diffusion, because of the interconnected graphene/carbon networks among nanoparticles of the hollow SnO2 spheres.

In situ formation of graphene layers on graphite surfaces for efficient anodes of microbial fuel cells.

Science.gov (United States)

Tang, Jiahuan; Chen, Shanshan; Yuan, Yong; Cai, Xixi; Zhou, Shungui

2015-09-15

Graphene can be used to improve the performance of the anode in a microbial fuel cell (MFC) due to its good biocompatibility, high electrical conductivity and large surface area. However, the chemical production and modification of the graphene on the anode are environmentally hazardous because of the use of various harmful chemicals. This study reports a novel method based on the electrochemical exfoliation of a graphite plate (GP) for the in situ formation of graphene layers on the surface of a graphite electrode. When the resultant graphene-layer-based graphite plate electrode (GL/GP) was used as an anode in an MFC, a maximum power density of 0.67 ± 0.034 W/m(2) was achieved. This value corresponds to 1.72-, 1.56- and 1.26-times the maximum power densities of the original GP, exfoliated-graphene-modified GP (EG/GP) and chemically-reduced-graphene-modified GP (rGO/GP) anodes, respectively. Electrochemical measurements revealed that the high performance of the GL/GP anode was attributable to its macroporous structure, improved electron transfer and high electrochemical capacitance. The results demonstrated that the proposed method is a facile and environmentally friendly synthesis technique for the fabrication of high-performance graphene-based electrodes for use in microbial energy harvesting. Copyright © 2015 Elsevier B.V. All rights reserved.

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

Directory of Open Access Journals (Sweden)

Lung-Chien Chen

2012-01-01

Full Text Available This study investigates an aluminum nitride (AlN nanorod structure sputtered by glancing angle deposition (GLAD and its application as a buffer layer for GaN-based light-emitting diodes (LEDs that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.

Chemical bath deposited zinc sulfide buffer layers for copper indium gallium sulfur-selenide solar cells and device analysis

International Nuclear Information System (INIS)

Kundu, Sambhu; Olsen, Larry C.

2005-01-01

Cadmium-free copper indium gallium sulfur-selenide (CIGSS) thin film solar cells have been fabricated using chemical bath deposited (CBD) zinc sulfide (ZnS) buffer layers. Shell Solar Industries provided high quality CIGSS absorber layers. The use of CBD-ZnS, which is a higher band gap material than CdS, improved the quantum efficiency of fabricated cells at lower wavelengths, leading to an increase in short circuit current. The best cell to date yielded an active area (0.43 cm 2 ) efficiency of 13.3%. The effect of the ZnS buffer layer thickness on device performance was studied carefully. This paper also presents a discussion of issues relevant to the use of the CBD-ZnS buffer material for improving device performance

Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates

International Nuclear Information System (INIS)

Zhuang Huihui; Yan Jinliang; Xu Chengyang; Meng Delan

2014-01-01

Cu and Cu/ITO films were prepared on polyethylene terephthalate (PET) substrates with a Ga 2 O 3 buffer layer using radio frequency (RF) and direct current (DC) magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga 2 O 3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu(4.2 nm)/ITO(30 nm) films were investigated with respect to the Ga 2 O 3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga 2 O 3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10 −3 Ω −1 were achieved for Cu(4.2 nm)/ITO(30 nm) films with a Ga 2 O 3 layer thickness of 15 nm. (semiconductor materials)

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

Science.gov (United States)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Preparation of functional layers for anode-supported solid oxide fuel cells by the reverse roll coating process

Science.gov (United States)

Mücke, R.; Büchler, O.; Bram, M.; Leonide, A.; Ivers-Tiffée, E.; Buchkremer, H. P.

The roll coating technique represents a novel method for applying functional layers to solid oxide fuel cells (SOFCs). This fast process is already used for mass production in other branches of industry and offers a high degree of automation. It was utilized for coating specially developed anode (NiO + 8YSZ, 8YSZ: 8 mol% yttria-stabilized zirconia) and electrolyte (8YSZ) suspensions on green and pre-sintered tape-cast anode supports (NiO + 8YSZ). The layers formed were co-fired in a single step at 1400 °C for 5 h. As a result, the electrolyte exhibited a thickness of 14-18 μm and sufficient gas tightness. Complete cells with a screen-printed and sintered La 0.65Sr 0.3MnO 3- δ (LSM)/8YSZ cathode yielded a current density of 0.9-1.1 A cm -2 at 800 °C and 0.7 V, which is lower than the performance of non-co-fired slip-cast or screen-printed Jülich standard cells with thinner anode and electrolyte layers. The contribution of the cell components to the total area-specific resistance (ASR) was calculated by analyzing the distribution function of the relaxation times (DRTs) of measured electrochemical impedance spectra (EIS) and indicates the potential improvement in the cell performance achievable by reducing the thickness of the roll-coated layers. The results show that the anode-supported planar half-cells can be fabricated cost-effectively by combining roll coating with subsequent co-firing.

Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers

International Nuclear Information System (INIS)

Shikata, G.; Hirano, S.; Inoue, T.; Hijikata, Y.; Orihara, M.; Yaguchi, H.; Yoshida, S.

2008-01-01

We report on the improvement of the surface morphology of a-plane InN films grown by RF molecular beam epitaxy. By using low-temperature (LT) InN buffer layers, we could successfully obtain InN films with a smooth surface. The full width at half maximum values of the X-ray diffraction (11-20) rocking curve along the [0001]InN direction were 2870 arcsec and 3410 arcsec for a-plane InN samples grown at 500 C with and without LT-InN buffer layers, respectively. Thus, we could improve also the crystalline quality of a-plane InN films by using LT-InN buffer layers. We observed strong polarization anisotropy in the photoluminescence spectra of a-plane InN, which is typical of nonpolar wurtzite III-nitride films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

International Nuclear Information System (INIS)

Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

2004-01-01

We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

Magnetic properties of Pr-Fe-B thick-film magnets deposited on Si substrates with glass buffer layer

Science.gov (United States)

Nakano, M.; Kurosaki, A.; Kondo, H.; Shimizu, D.; Yamaguchi, Y.; Yamashita, A.; Yanai, T.; Fukunaga, H.

2018-05-01

In order to improve the magnetic properties of PLD-made Pr-Fe-B thick-film magnets deposited on Si substrates, an adoption of a glass buffer layer was carried out. The glass layer could be fabricated under the deposition rate of approximately 70 μm/h on a Si substrate using a Nd-YAG pulse laser in the vacuum atmosphere. The use of the layer enabled us to reduce the Pr content without a mechanical destruction and enhance (BH)max value by approximately 20 kJ/m3 compared with the average value of non-buffer layered Pr-Fe-B films with almost the same thickness. It is also considered that the layer is also effective to apply a micro magnetization to the films deposited on Si ones.

Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

Science.gov (United States)

Wang, Lan; Lin, Xianzhong; Ennaoui, Ahmed; Wolf, Christian; Lux-Steiner, Martha Ch.; Klenk, Reiner

2016-02-01

We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

Co-delivery of ibuprofen and gentamicin from nanoporous anodic titanium dioxide layers.

Science.gov (United States)

Pawlik, Anna; Jarosz, Magdalena; Syrek, Karolina; Sulka, Grzegorz D

2017-04-01

Although single-drug therapy may prove insufficient in treating bacterial infections or inflammation after orthopaedic surgeries, complex therapy (using both an antibiotic and an anti-inflammatory drug) is thought to address the problem. Among drug delivery systems (DDSs) with prolonged drug release profiles, nanoporous anodic titanium dioxide (ATO) layers on Ti foil are very promising. In the discussed research, ATO samples were synthesized via a three-step anodization process in an ethylene glycol-based electrolyte with fluoride ions. The third step lasted 2, 5 and 10min in order to obtain different thicknesses of nanoporous layers. Annealing the as-prepared amorphous layers at the temperature of 400°C led to obtaining the anatase phase. In this study, water-insoluble ibuprofen and water-soluble gentamicin were used as model drugs. Three different drug loading procedures were applied. The desorption-desorption-diffusion (DDD) model of the drug release was fitted to the experimental data. The effects of crystalline structure, depth of TiO 2 nanopores and loading procedure on the drug release profiles were examined. The duration of the drug release process can be easily altered by changing the drug loading sequence. Water-soluble gentamicin is released for a long period of time if gentamicin is loaded in ATO as the first drug. Additionally, deeper nanopores and anatase phase suppress the initial burst release of drugs. These results confirm that factors such as morphological and crystalline structure of ATO layers, and the procedure of drug loading inside nanopores, allow to alter the drug release performance of nanoporous ATO layers. Copyright © 2017 Elsevier B.V. All rights reserved.

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

International Nuclear Information System (INIS)

Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

2009-01-01

Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

Tunnel magnetoresistance of an as-deposited Co2FeAl0.5Si0.5-based magnetic tunnel junction on a Ta/Ru buffer layer

International Nuclear Information System (INIS)

Hwang, Jae Youn; Lee, Gae Hun; Song, Yun Heub; Yim, Hae In

2010-01-01

A magnetic tunnel junction (MTJ) with a Co 2 FeAl 0.5 Si 0.5 (CFAS) heusler film on a conductive Ta/Ru buffer layer was fabricated for the first time. In the as-deposited state, a highly B2-ordered CFAS film was obtained by using the Ta/Ru buffer layer. The Ta (110) buffer layer causes a Ru (002) buffer layer, which leads to the growth of CFAS with a B2 structure and a completely flat CFAS film. After 600 .deg. C annealing, strain relaxation occurred in the Ta/Ru interface, and the surface roughness decreased; however, the B2-ordered CFAS film remained. Also, in the as-deposited state, a exchange-biased CFAS/AlO x /CFAS MTJ deposited on a Ta/Ru buffer layer exhibited a relatively high tunnel magnetoresistance (TMR) of 13% at room temperature, which resulted from the highly B2-ordered CFAS layer and the perfectly flat surface roughness resulting from the use of the Ta/Ru buffer layer.

Analysis of nanopore arrangement of porous alumina layers formed by anodizing in oxalic acid at relatively high temperatures

Science.gov (United States)

Zaraska, Leszek; Stępniowski, Wojciech J.; Jaskuła, Marian; Sulka, Grzegorz D.

2014-06-01

Anodic aluminum oxide (AAO) layers were formed by a simple two-step anodization in 0.3 M oxalic acid at relatively high temperatures (20-30 °C) and various anodizing potentials (30-65 V). The effect of anodizing conditions on structural features of as-obtained oxides was carefully investigated. A linear and exponential relationships between cell diameter, pore density and anodizing potential were confirmed, respectively. On the other hand, no effect of temperature and duration of anodization on pore spacing and pore density was found. Detailed quantitative and qualitative analyses of hexagonal arrangement of nanopore arrays were performed for all studied samples. The nanopore arrangement was evaluated using various methods based on the fast Fourier transform (FFT) images, Delaunay triangulations (defect maps), pair distribution functions (PDF), and angular distribution functions (ADF). It was found that for short anodizations performed at relatively high temperatures, the optimal anodizing potential that results in formation of nanostructures with the highest degree of pore order is 45 V. No direct effect of temperature and time of anodization on the nanopore arrangement was observed.

Layered SnS sodium ion battery anodes synthesized near room temperature

KAUST Repository

Xia, Chuan

2017-08-10

In this report, we demonstrate a simple chemical bath deposition approach for the synthesis of layered SnS nanosheets (typically 6 nm or ~10 layers thick) at very low temperature (40 °C). We successfully synthesized SnS/C hybrid electrodes using a solution-based carbon precursor coating with subsequent carbonization strategy. Our data showed that the ultrathin carbon shell was critical to the cycling stability of the SnS electrodes. As a result, the as-prepared binder-free SnS/C electrodes showed excellent performance as sodium ion battery anodes. Specifically, the SnS/C anodes delivered a reversible capacity as high as 792 mAh·g−1 after 100 cycles at a current density of 100 mA·g−1. They also had superior rate capability (431 mAh·g−1 at 3,000 mA·g−1) and stable long-term cycling performance under a high current density (345 mAh·g−1 after 500 cycles at 3 A·g−1). Our approach opens up a new route to synthesize SnS-based hybrid materials at low temperatures for energy storage and other applications. Our process will be particularly useful for chalcogenide matrix materials that are sensitive to high temperatures during solution synthesis.

Efficiency improvement of flexible fluorescent and phosphorescent organic light emitting diodes by inserting a spin-coating buffer layer

International Nuclear Information System (INIS)

Tsai, Yu-Sheng; Wang, Shun-Hsi; Chen, Shen-Yaur; Su, Shin-Yuan; Juang, Fuh-Shyang

2009-01-01

We dissolved hole transport materials α-NPD and NPB in THF solvent, and spin-coated the α-NPD + THF or NPB + THF solution onto ITO anode surface to improve the luminance efficiency and lifetime of flexible fluorescent and phosphorescent organic light emitting diodes. Then the BCP and TPBi were employed as hole blocking layer (HBL) of phosphorescent device and its thickness was optimized. From the experimental results, the maximum luminance efficiency is 4.4 cd/A at 9 V of fluorescent device and 24.4 cd/A of phosphorescent device, respectively. Such an improvement in the device performance was attributed to the smoother surface and good contact between the interface of spin-coated HTL/ITO, the hole were effectively injected from the anode into the organic layer. And the deposited HTL can block excitons from diffusing into the anode to quench, thus improving the luminance efficiency and lifetime greatly.

Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

International Nuclear Information System (INIS)

Shinozaki, Tomomasa; Nomura, Kenji; Katase, Takayoshi; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

2010-01-01

Epitaxial (0001) films of GaN were grown on (111) YSZ substrates using single-crystalline InGaZnO 4 (sc-IGZO) lattice-matched buffer layers by molecular beam epitaxy with a NH 3 source. The epitaxial relationships are (0001) GaN //(0001) IGZO //(111) YSZ in out-of-plane and [112-bar 0] GaN //[112-bar 0] IGZO //[11-bar 0] YSZ in in-plane. This is different from those reported for GaN on many oxide crystals; the in-plane orientation of GaN crystal lattice is rotated by 30 o with respect to those of oxide substrates except for ZnO. Although these GaN films showed relatively large tilting and twisting angles, which would be due to the reaction between GaN and IGZO, the GaN films grown on the sc-IGZO buffer layers exhibited stronger band-edge photoluminescence than GaN grown on a low-temperature GaN buffer layer.

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

International Nuclear Information System (INIS)

Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2008-01-01

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

A mesoporous WO{sub 3−X}/graphene composite as a high-performance Li-ion battery anode

Energy Technology Data Exchange (ETDEWEB)

Liu, Fei [C-Industry Incubation Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Kim, Jong Gu [C-Industry Incubation Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Department of Fine Chemical Engineering and Applied Chemistry, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Lee, Chul Wee [C-Industry Incubation Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); University of Science and Technology (UST), Gajeong-ro, Yuseong-gu, Daejeon 305-333 (Korea, Republic of); Im, Ji Sun, E-mail: jsim@krict.re.kr [C-Industry Incubation Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); University of Science and Technology (UST), Gajeong-ro, Yuseong-gu, Daejeon 305-333 (Korea, Republic of)

2014-10-15

Graphical abstract: The highly flexible and conductive graphene layer can enhance electron transfer, protect metal oxides against disintegration and aggregation and buffer the strain induced by volume expansion during cycles. The mesoporous surface layer provides an open network for Li+ diffusion. - Highlights: • Novel cocktail effects of 2D mesoporous WO{sub 3−X}/graphene for lithium ion battery. • New approach for lithium ion battery by easy and unique synthesis method. • Mechanism study with proper data for understanding a reaction on anode surface. - Abstract: A novel mesoporous WO{sub 3−X}/graphene composite was developed. This material allowed rapid electron and Li{sup +} ion diffusion when used as a Li-ion battery (LIB) anode material. Remarkably, the graphene support protected WO{sub 3−X} from changing volume during the electrochemical cycling process; this process generally induces capacity loss. The current work describes a high-performance anode material for LIB that has highly dense WO{sub 3−X}, as well as high capacity, rate capability and stability.

Efficiency enhancement of polymer solar cells by applying poly(vinylpyrrolidone) as a cathode buffer layer via spin coating or self-assembly.

Science.gov (United States)

Wang, Haitao; Zhang, Wenfeng; Xu, Chenhui; Bi, Xianghong; Chen, Boxue; Yang, Shangfeng

2013-01-01

A non-conjugated polymer poly(vinylpyrrolidone) (PVP) was applied as a new cathode buffer layer in P3HT:PCBM bulk heterojunction polymer solar cells (BHJ-PSCs), by means of either spin coating or self-assembly, resulting in significant efficiency enhancement. For the case of incorporation of PVP by spin coating, power conversion efficiency (PCE) of the ITO/PEDOT:PSS/P3HT:PCBM/PVP/Al BHJ-PSC device (3.90%) is enhanced by 29% under the optimum PVP spin-coating speed of 3000 rpm, which leads to the optimum thickness of PVP layer of ~3 nm. Such an efficiency enhancement is found to be primarily due to the increase of the short-circuit current (J(sc)) (31% enhancement), suggesting that the charge collection increases upon the incorporation of a PVP cathode buffer layer, which originates from the conjunct effects of the formation of a dipole layer between P3HT:PCBM active layer and Al electrodes, the chemical reactions of PVP molecules with Al atoms, and the increase of the roughness of the top Al film. Incorporation of PVP layer by doping PVP directly into the P3HT:PCBM active layer leads to an enhancement of PCE by 13% under the optimum PVP doping ratio of 3%, and this is interpreted by the migration of PVP molecules to the surface of the active layer via self-assembly, resulting in the formation of the PVP cathode buffer layer. While the formation of the PVP cathode buffer layer is fulfilled by both fabrication methods (spin coating and self-assembly), the dependence of the enhancement of the device performance on the thickness of the PVP cathode buffer layer formed by self-assembly or spin coating is different, because of the different aggregation microstructures of the PVP interlayer.

Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering

International Nuclear Information System (INIS)

Chen Sihai; Ma Hong; Wang Shuangbao; Shen Nan; Xiao Jing; Zhou Hao; Zhao Xiaomei; Li Yi; Yi Xinjian

2006-01-01

Thin films made by vanadium oxide have been obtained by direct current magnetron sputtering method on SiO 2 buffer layers. A detailed electrical and structural characterization has been performed on the deposited films by four-point probe method and scanning electron microscopy (SEM). At room temperature, the four-point probe measurement result presents the resistance of the film to be 25 kU/sheet. The temperature coefficient of resistance is - 2.0%/K. SEM image indicates that the vanadium oxide exhibits a submicrostructure with lamella size ranging from 60 nm to 300 nm. A 32 x 32-element test microbolometer was fabricated based on the deposited thin film. The infrared response testing showed that the response was 200 mV. The obtained results allow us to conclude that the vanadium oxide thin films on SiO 2 buffer layers is suitable for uncooled focal plane arrays applications

Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

Directory of Open Access Journals (Sweden)

Wang Lan

2016-01-01

Full Text Available We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

Ru nanostructure fabrication using an anodic aluminum oxide nanotemplate and highly conformal Ru atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Kim, Woo-Hee; Park, Sang-Joon; Son, Jong-Yeog; Kim, Hyungjun [Department of Material Science and Engineering, POSTECH Pohang University of Science and Technology, San 31, Hyoja-Dong, Nam-Gu, Pohang 790-784 (Korea, Republic of)

2008-01-30

We fabricated metallic nanostructures directly on Si substrates through a hybrid nanoprocess combining atomic layer deposition (ALD) and a self-assembled anodic aluminum oxide (AAO) nanotemplate. ALD Ru films with Ru(DMPD)(EtCp) as a precursor and O{sub 2} as a reactant exhibited high purity and low resistivity with negligible nucleation delay and low roughness. These good growth characteristics resulted in the excellent conformality for nanometer-scale vias and trenches. Additionally, AAO nanotemplates were fabricated directly on Si and Ti/Si substrates through a multiple anodization process. AAO nanotemplates with various hole sizes (30-100 nm) and aspect ratios (2:1-20:1) were fabricated by controlling the anodizing process parameters. The barrier layers between AAO nanotemplates and Si substrates were completely removed by reactive ion etching (RIE) using BCl{sub 3} plasma. By combining the ALD Ru and the AAO nanotemplate, Ru nanostructures with controllable sizes and shapes were prepared on Si and Ti/Si substrates. The Ru nanowire array devices as a platform for sensor devices exhibited befitting properties of good ohmic contact and high surface/volume ratio.

Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

International Nuclear Information System (INIS)

Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

2005-01-01

The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

SnO2 anode surface passivation by atomic layer deposited HfO2 improves li-ion battery performance

KAUST Repository

Yesibolati, Nulati; Shahid, Muhammad; Chen, Wei; Hedhili, Mohamed N.; Reuter, Mark C.; Ross, Frances M.; Alshareef, Husam N.

2014-01-01

For the first time, it is demonstrated that nanoscale HfO2 surface passivation layers formed by atomic layer deposition (ALD) significantly improve the performance of Li ion batteries with SnO2-based anodes. Specifically, the measured battery

Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications

International Nuclear Information System (INIS)

Lim, Dong-Gun; Kwak, Dong-Joo; Yi Junsin

2002-01-01

In this paper, we report upon an investigation into the feasibility of Y 2 O 3 films as buffer layers for metal ferroelectric insulator semiconductor type capacitors. Buffer layers were prepared by a two-step process of low temperature film growth using the RF reactive magnetron sputtering method and subsequent rapid thermal annealing. By applying an yttrium metal seed layer of 4 nm, unwanted SiO 2 layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. Increasing the post-annealing temperature above 700 deg. C reduced the surface roughness of the Y 2 O 3 films, and increasing the O 2 partial pressure from 10 to 20% increased the surface roughness from 4.0 to 15.1 nm. The Y 2 O 3 films, prepared using an O 2 partial pressure of 20% and annealed at 900 deg. C, exhibited the best surface roughness characteristics of the samples studied. For a substrate temperature above 400 deg. C and an O 2 partial pressure of 20%, we observed that a cubic Y 2 O 3 phase dominated the X-ray diffraction spectra. The lowest lattice mismatch achieved between the Y 2 O 3 film and the Si substrate was 1.75%. By using a two-step process, we reduced the leakage current density of Y 2 O 3 films by two orders of magnitude and the D it to as low as 8.72x10 10 cm -2 eV -1 . A Y 2 O 3 buffer layer grown at 400 deg. C in a 20% O 2 partial pressure and rapidly annealed at 900 deg. C in an oxygen enviroment exhibited the best overall properties for a single transistor ferroelectric random access memory

Effect of Alloy 625 Buffer Layer on Hardfacing of Modified 9Cr-1Mo Steel Using Nickel Base Hardfacing Alloy

Science.gov (United States)

Chakraborty, Gopa; Das, C. R.; Albert, S. K.; Bhaduri, A. K.; Murugesan, S.; Dasgupta, Arup

2016-04-01

Dashpot piston, made up of modified 9Cr-1Mo steel, is a part of diverse safety rod used for safe shutdown of a nuclear reactor. This component was hardfaced using nickel base AWS ER NiCr-B alloy and extensive cracking was experienced during direct deposition of this alloy on dashpot piston. Cracking reduced considerably and the component was successfully hardfaced by application of Inconel 625 as buffer layer prior to hardface deposition. Hence, a separate study was undertaken to investigate the role of buffer layer in reducing the cracking and on the microstructure of the hardfaced deposit. Results indicate that in the direct deposition of hardfacing alloy on modified 9Cr-1Mo steel, both heat-affected zone (HAZ) formed and the deposit layer are hard making the thickness of the hard layer formed equal to combined thickness of both HAZ and deposit. This hard layer is unable to absorb thermal stresses resulting in the cracking of the deposit. By providing a buffer layer of Alloy 625 followed by a post-weld heat treatment, HAZ formed in the modified 9Cr-1Mo steel is effectively tempered, and HAZ formed during the subsequent deposition of the hardfacing alloy over the Alloy 625 buffer layer is almost completely confined to Alloy 625, which does not harden. This reduces the cracking susceptibility of the deposit. Further, unlike in the case of direct deposition on modified 9Cr-1Mo steel, dilution of the deposit by Ni-base buffer layer does not alter the hardness of the deposit and desired hardness on the deposit surface could be achieved even with lower thickness of the deposit. This gives an option for reducing the recommended thickness of the deposit, which can also reduce the risk of cracking.

Enhanced Optical and Electrical Properties of TiO{sub 2} Buffered IGZO/TiO{sub 2} Bi-Layered Films

Energy Technology Data Exchange (ETDEWEB)

Moon, Hyun-Joo; Kim, Daeil [University of Ulsan, Ulsan (Korea, Republic of)

2016-08-15

In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO{sub 2}-deposited glass substrate to determine the effect of the thickness of a thin TiO{sub 2} buffer layer on the structural, optical, and electrical properties of the films. The thicknesses of the TiO{sub 2} buffer layers were 5, 10 and 15 nm, respectively. As-deposited IGZO films with a 10 nm-thick TiO{sub 2} buffer layer had an average optical transmittance of 85.0% with lower resistivity (1.83×10-2 Ω cm) than that of IGZO single layer films. The figure of merit (FOM) reached a maximum of 1.44×10-4 Ω-1 for IGZO/10 nm-thick TiO{sub 2} bi-layered films, which is higher than the FOM of 6.85×10-5 Ω-1 for IGZO single layer films. Because a higher FOM value indicates better quality transparent conducting oxide (TCO) films, the IGZO/10 nm-thick TiO{sub 2} bi-layered films are likely to perform better in TCO applications than IGZO single layer films.

Improvement of the interfacial Dzyaloshinskii-Moriya interaction by introducing a Ta buffer layer

NARCIS (Netherlands)

Kim, N.H.; Han, D.S.; Jung, J.; Cho, J.; Kim, J.S.; Swagten, H.J.M.; You, C.Y.

2015-01-01

We report systematic measurements of the interfacial Dzyaloshinskii-Moriya interaction (iDMI) by employing Brillouin light scattering in Pt/Co/AlOx and Ta/Pt/Co/AlOx structures. By introducing a tantalum buffer layer, the saturation magnetization and the interfacial perpendicular magnetic anisotropy

P-6 : Impact of buffer layers on the self-aligned top-gate a-IGZO TFT characteristics

NARCIS (Netherlands)

Nag, M.; en de rest

2015-01-01

In this work we present the impact of buffer layers deposited by various techniques such as plasma enhanced chemical deposition (PECVD), physical vapor deposition (PVD) and atomic layer deposition (ALD) techniques on self-aligned (SA) top gate amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Energy Technology Data Exchange (ETDEWEB)

Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

2008-01-15

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

Buffered Electrochemical Polishing of Niobium

Energy Technology Data Exchange (ETDEWEB)

Ciovati, Gianluigi [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Tian, Hui [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); College of William and Mary, Williamsburg, VA (United States); Corcoran, Sean [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)

2011-03-01

The standard preparation of superconducting radio-frequency (SRF) cavities made of pure niobium include the removal of a 'damaged' surface layer, by buffered chemical polishing (BCP) or electropolishing (EP), after the cavities are formed. The performance of the cavities is characterized by a sharp degradation of the quality factor when the surface magnetic field exceeds about 90 mT, a phenomenon referred to as 'Q-drop.' In cavities made of polycrystalline fine grain (ASTM 5) niobium, the Q-drop can be significantly reduced by a low-temperature (? 120 °C) 'in-situ' baking of the cavity if the chemical treatment was EP rather than BCP. As part of the effort to understand this phenomenon, we investigated the effect of introducing a polarization potential during buffered chemical polishing, creating a process which is between the standard BCP and EP. While preliminary results on the application of this process to Nb cavities have been previously reported, in this contribution we focus on the characterization of this novel electrochemical process by measuring polarization curves, etching rates, surface finish, electrochemical impedance and the effects of temperature and electrolyte composition. In particular, it is shown that the anodic potential of Nb during BCP reduces the etching rate and improves the surface finish.

Growth of highly textured SnS on mica using an SnSe buffer layer

International Nuclear Information System (INIS)

Wang, S.F.; Fong, W.K.; Wang, W.; Surya, C.

2014-01-01

We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer. - Highlights: • A record low rocking curve FWHM for deposited SnS on mica • Investigation of the nucleation of SnS on mica using the interface model • Investigation of nucleation mechanism by phi-scan measurement • Grain boundary formation from crystallites of various nucleation orientations • Suppression of nucleation orientations using an SnSe buffer layer

Concentrated ion beam emitted from an enlarged cylindrical-anode-layer Hall plasma accelerator and mechanism

Energy Technology Data Exchange (ETDEWEB)

Geng, S. F.; Wang, C. X. [Southwestern Institute of Physics, Chengdu 610041 (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Tang, D. L.; Qiu, X. M. [Southwestern Institute of Physics, Chengdu 610041 (China); Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong)

2013-01-28

An enlarged cylindrical-anode-layer Hall plasma accelerator with an outlet diameter of 150 mm is experimentally demonstrated to produce a concentrated ion beam, especially at a high discharge voltage, with a high current utilization efficiency of up to {approx}0.9. Numerical investigation based on the three-dimensional particle-in-cell method is performed to study the ion dynamics and elucidate the origin of the ion beam characteristics. The simulation results reveal that the equipotential lines play an important role in the surface near the anode emitting the ions. The ion emitting surface is determined by the magnetic field lines near the anode and the magnetic mirror contributes to the concentrated beam significantly. The high current utilization efficiency results from the appropriate obliquity of the magnetic mirror.

Effects of Cr underlayer and Pt buffer layer on the interfacial structure and magnetic characteristics of sputtered FePt films

International Nuclear Information System (INIS)

Sun, A.-C.; Hsu, J.-H.; Huang, H.L.; Kuo, P.C.

2006-01-01

This work develops a new method for growing L1 0 FePt(0 0 1) thin film on a Pt/Cr bilayer using an amorphous glass substrate. Semi-coherent epitaxial growth was initiated from the Cr(0 0 2) underlayer, continued through the Pt(0 0 1) buffer layer, and extended into the L1 0 FePt(0 0 1) magnetic layer. The squareness of the L1 0 FePt film in the presence of both a Cr underlayer and a Pt buffer layer was close to unity as the magnetic field was applied perpendicular to the film plane. The single L1 0 FePt(1 1 1) orientation was observed in the absence of a Cr underlayer. When a Cr underlayer is inserted, the preferred orientation switched from L1 0 FePt(1 1 1) to L1 0 FePt(0 0 1) and the magnetic film exhibited perpendicular magnetic anisotropy. However, in the absence of an Pt intermediate layer, the Cr atoms diffused directly into the FePt magnetic layer and prevented the formation of the L1 0 FePt(0 0 1) preferred orientation. When a Pt buffer layer was introduced between the FePt and Cr underlayer, the L1 0 FePt(0 0 1) peak appeared. The thickness of the Pt buffer layer also substantially affected the magnetic properties and atomic arrangement at the FePt/Pt and Pt/Cr interfaces

Use of a Soluble Anode in Electrodeposition of Thick Bismuth Telluride Layers

Science.gov (United States)

Maas, M.; Diliberto, S.; de Vaulx, C.; Azzouz, K.; Boulanger, C.

2014-10-01

Integration of thermoelectric devices within an automotive heat exchanger could enable conversion of lost heat into electrical energy, contributing to improved total output from the engine. For this purpose, synthesis of thick bismuth telluride (Bi2Te3) films is required. Bismuth telluride has been produced by an electrochemical method in nitric acid with a sacrificial bismuth telluride anode as the source of cations. The binary layer grows on the working electrode while the counter-electrode, a Bi2Te3 disk obtained by high frequency melting, is oxidized to BiIII and TeIV. This process leads to auto-regeneration of the solution without modification of its composition. The thickness of films deposited by use of the Bi2Te3 anode was approximately 10 times that without. To demonstrate the utility of a soluble anode in electrochemical deposition, we report characterization of the composition and morphology of the films obtained under different experimental conditions. Perfectly dense and regular Bi2Te3 films (˜400 μm) with low internal stress and uniform composition across the cross-section were prepared. Their thermoelectric properties were assessed.

Development of Buffer Layer Technologies for LWIR and VLWIR HgCdTe Integration on Si

National Research Council Canada - National Science Library

Golding, Terry D

2005-01-01

This program proposed to develop manufacturable, cost-effective buffer layer technologies that would allow either hybrid or monolithic integration of LWIR and VLWIR HgCdTe infrared focal plane arrays...

Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

2013-09-02

Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

Ba{sub y}Sr{sub 1−y}TiO{sub 3} buffer layers for strain tuning of infinite-layer Sr{sub 1−x}La{sub x}CuO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Sakuma, Keita, E-mail: sakuma.keita@d.mbox.nagoya-u.ac.jp; Ito, Masataka; He, Yilun; Hajiri, Tetsuya; Ueda, Kenji; Asano, Hidefumi

2016-08-01

We report on the precise tuning of lattice strain in an infinite-layer electron-doped high temperature superconductor Sr{sub 1−x}La{sub x}CuO{sub 2} (SLCO; a{sub SLCO} = 0.3949 nm for x = 0.1), which is a perovskite-related oxide, using perovskite BaTiO{sub 3}–SrTiO{sub 3} (BSTO; Ba{sub y}Sr{sub 1−y}TiO{sub 3}) buffer layers. The BSTO buffer layers formed on (001) (La{sub 0.18}Sr{sub 0.82})(Al{sub 0.59}Ta{sub 0.41})O{sub 3} substrates by magnetron sputtering were fully relaxed with high crystalline quality due to high oxygen partial pressure deposition and post annealing at 950 °C. The lattice constants of the BSTO buffer layers could be controlled in the range of 0.3926–0.3973 nm by changing the Ba content (y = 0.2–0.7). These BSTO buffer layers allow coherent growth of SLCO thin films, and a clear dependence of the superconducting transition temperature on the lattice strain was observed. The fabrication of these BSTO/superconductor heterostructures may provide novel devices composed of functional perovskite thin films, in addition to a general approach for the precise control of lattice strain in functional perovskite thin films. - Highlights: • Ba{sub y}Sr{sub 1−y}TiO{sub 3} buffer layers were developed for the strain tuning of perovskite-related oxides. • Strain effect in Sr{sub 1−x}La{sub x}CuO{sub 2} was investigated by using Ba{sub y}Sr{sub 1−y}TiO{sub 3} buffer layers. • Ba{sub y}Sr{sub 1−y}TiO{sub 3} buffer layers can be used to tune the strain in other perovskite oxides.

White OLED with high stability and low driving voltage based on a novel buffer layer MoOx

Energy Technology Data Exchange (ETDEWEB)

Jiang Xueyin [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhang Zhilin [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Cao Jin [Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072 (China); Khan, M A [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Khizar-ul-Haq [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Zhu Wenqing [School of Materials Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China)

2007-09-21

White organic light emitting diodes (WOLEDs) with copper phthalocyanine (CuPc), 4,4',4-prime-tris(N-3-methylphenyl-N-phenyl-amino) triphenylamine (m-MTDATA), tungsten oxide (WO{sub 3}) and molybdenum oxide (MoOx) as buffer layers have been investigated. The MoOx based device shows superior performance with low driving voltage, high power efficiency and much longer lifetime than those with other buffer layers. For the Cell using MoOx as buffer layer and 4,7-diphenyl-1,10-phenanthroline (Bphen) as electron transporting layer (ETL), at the luminance of 1000 cd m{sup -2}, the driving voltage is 4.9 V, which is 4.2 V, 2 V and 0.7 V lower than that of the devices using CuPc (Cell-CuPc), m-MTDATA (Cell-m-MTDATA) and WO{sub 3} (Cell-WO{sub 3}) as buffer layers, respectively. Its power efficiency is 7.67 Lm W{sup -1}, which is 2.37 times higher than that of Cell-CuPc and a little higher than that of Cell-m-MTDATA. The projected half-life under the initial luminance of 100 cd m{sup -2} is 55 260 h, which is more than 4.6 times longer than that of Cell-m-MTDATA and Cell-CuPc. The superior performance of Cell-MoOx is attributed to its high hole injection ability and the stable interface between MoOx and organic material. The work function of MoOx has been measured by the contact potential difference method. The J-V curves of 'hole-only' devices indicate that a small hole injection barrier between MoOx/N,'-bis(naphthalene-1-y1)-N, N'-bis(phenyl)-benzidine (NPB) leads to a strong hole injection, resulting in a low driving voltage and a high stability.

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

Directory of Open Access Journals (Sweden)

Gnilenko A. B.

2015-12-01

Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

Enhanced magnetic properties of chemical solution deposited BiFeO3 thin film with ZnO buffer layer

International Nuclear Information System (INIS)

Rajalakshmi, R.; Kambhala, Nagaiah; Angappane, S.

2012-01-01

Highlights: ► Enhanced magnetization of BiFeO 3 is important for strong magnetoelectric coupling. ► BiFeO 3 film with ZnO buffer layer was successfully synthesized by chemical method. ► Magnetization of BiFeO 3 has increased by more than 10 times with ZnO buffer layer. ► A mechanism for enhancement in ferromagnetism of BiFeO 3 film is proposed. - Abstract: Magnetic properties of BiFeO 3 films deposited on Si substrates with and without ZnO buffer layer have been studied in this work. We adopted the chemical solution deposition method for the deposition of BiFeO 3 as well as ZnO films. The x-ray diffraction measurements on the deposited films confirm the formation of crystalline phase of BiFeO 3 and ZnO films, while our electron microscopy measurements help to understand the morphology of few micrometers thick films. It is found that the deposited ZnO film exhibit a hexagonal particulate surface morphology, whereas BiFeO 3 film fully covers the ZnO surface. Our magnetic measurements reveal that the magnetization of BiFeO 3 has increased by more than ten times in BiFeO 3 /ZnO/Si film compared to BiFeO 3 /Si film, indicating the major role played by ZnO buffer layer in enhancing the magnetic properties of BiFeO 3 , a technologically important multiferroic material.

Study of the influence of Nb buffer layer on the exchange coupling induced at the Co/IrMn interface

Energy Technology Data Exchange (ETDEWEB)

Merino, I.L.C., E-mail: isabel5cas@gmail.com [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil); Figueiredo, L.C. [Instituto de Física, Universidade de Brasília, Brasília 70910-900 (Brazil); Passamani, E.C.; Nascimento, V.P. [Departamento de Física, Universidade Federal do Espírito Santo, Vitória 29075-910 (Brazil); Pelegrini, F. [Instituto de Física, Universidade Federal de Goiás, Goiânia 74560-900 (Brazil); Baggio Saitovitch, E. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil)

2017-06-15

Highlights: • Nb buffer layer favors smooth/rough Co/IrMn interfaces, depending on its thickness. • Double and single-like hysteresis loop features depend on the Nb thickness. • Co uniaxial anisotropy induced exchange-bias in as-deposited sample. • Uniaxial and exchange-bias anisotropy directions depend on the Nb thickness. • Thicker Nb favors non-collinear anisotropies, while thinner Nb favors collinear. - Abstract: Hybrid Nb(t{sub Nb})/Co(10 nm)/IrMn(15 nm)/Nb(10 nm) heterostructured materials were prepared by DC Magnetron Sputtering and systematically studied by X-ray, magnetization and ferromagnetic resonance techniques. For thinner Nb buffer layer (≤10 nm), it was found that there is an inter-diffusion at Co/IrMn interface, which favors double-like hysteresis loop. For thicker Nb layers, however, a gradual transition from double to single-like hysteresis loops is observed and it is associated with the reduction of the Nb roughness, which also enhances the exchange coupling at the Co/IrMn interface. Nb grown on IrMn layer induces the formation of an NbIrMn alloy layer, while no evidence of inter-diffusion at the Co/Nb interface is observed. For rougher Nb buffer layers (t{sub Nb} < 50 nm), exchange bias and Co uniaxial anisotropies are pointing at the same direction (β∼zero), but for smoother Nb buffer layer (t{sub Nb} = 50 nm) a β angle of 150{sup o} is found. Exchange bias effect was measured in as-prepared and in field-cooled samples; being its presence, in as-prepared sample, attributed to the unidirectional anisotropy of the Co layer (its intensity is modified in case of sample with a CoIrMn alloy layer). Considering that the Si/Nb/Co/IrMn interfaces have different β values (t{sub Nb} = 35 and 50 nm), a study of the influence of magnetization direction, governed by exchange-biased layers, on superconducting properties of Nb films can be successfully done in this hybrid system.

Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

International Nuclear Information System (INIS)

Arslan, Engin; Ozbay, Ekmel; Ozturk, Mustafa K; Ozcelik, Suleyman; Teke, Ali

2008-01-01

We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties of GaN layers. A series of GaN layers were grown on Si(1 1 1) with different buffer layers and buffer thicknesses and were characterized by Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction (XRD) and photoluminescence (PL) measurements. We first discuss the optimization of the LT-AlN/HT-AlN/Si(1 1 1) templates and then the optimization of the graded AlGaN intermediate layers. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.6 μm. The XRD and PL measurements results confirmed that a wurtzite GaN was successfully grown. The resulting GaN film surfaces were flat, mirror-like and crack-free. The mosaic structure in the GaN layers was investigated. With a combination of Williamson-Hall measurements and the fitting of twist angles, it was found that the buffer thickness determines the lateral coherence length, vertical coherence length, as well as the tilt and twist of the mosaic blocks in GaN films. The PL spectra at 8 K show that a strong band edge photoluminescence of GaN on Si (1 1 1) emits light at an energy of 3.449 eV with a full width at half maximum (FWHM) of approximately 16 meV. At room temperature, the peak position and FWHM of this emission become 3.390 eV and 58 meV, respectively. The origin of this peak was attributed to the neutral donor bound exciton. It was found that the optimized total thickness of the AlN and graded AlGaN layers played a very important role in the improvement of quality and in turn reduced the cracks during the growth of GaN/Si(1 1 1) epitaxial layers

Electrostatic layer-by-layer a of platinum-loaded multiwall carbon nanotube multilayer: A tunable catalyst film for anodic methanol oxidation

International Nuclear Information System (INIS)

Yuan Junhua; Wang Zhijuan; Zhang Yuanjian; Shen Yanfei; Han Dongxue; Zhang Qixian; Xu Xiaoyu; Niu Li

2008-01-01

A simple layer-by-layer (LBL) electrostatic adsorption technique was developed for deposition of films composed of alternating layers of positively charged poly(diallyldimethylammonium chloride) (PDDA) and negatively charged multiwall carbon nanotubes bearing platinum nanoparticles (Pt-CNTs). PDDA/Pt-CNT film structure and morphology up to six layers were characterized by scanning electron microscopy and ultraviolet-visible spectroscopy, showing the Pt-CNT layers to be porous and uniformly deposited within the multilayer films. Electrochemical properties of the PDDA/Pt-CNT films, as well as electrocatalytic activity toward methanol oxidation, were investigated with cyclic voltammetry. Significant activity toward anodic methanol oxidation was observed and is readily tunable through changing film thickness and/or platinum-nanoparticle loading. Overall, the observed properties of these PDDA/Pt-CNT multilayer films indicated unique potential for application in direct methanol fuel cell

A possibility of enhancing Jc in MgB2 film grown on metallic hastelloy tape with the use of SiC buffer layer

International Nuclear Information System (INIS)

Putri, W. B. K.; Kang, B.; Ranot, M.; Lee, J. H.; Kang, W. N.

2014-01-01

We have grown MgB 2 on SiC buffer layer by using metallic Hastelloy tape as the substrate. Hastelloy tape was chosen for its potential practical applications, mainly in the power cable industry. SiC buffer layers were deposited on Hastelloy tapes at 400, 500, and 600 degrees C by using a pulsed laser deposition method, and then by using a hybrid physical-chemical vapor deposition technique, MgB 2 films were grown on the three different SiC buffer layers. An enhancement of critical current density values were noticed in the MgB 2 films on SiC/Hastelloy deposited at 500 and 600 degrees C. From the surface analysis, smaller and denser grains of MgB 2 tapes are likely to cause this enhancement. This result infers that the addition of SiC buffer layers may contribute to the improvement of superconducting properties of MgB 2 tapes.

Process and electrolyte for applying barrier layer anodic coatings

International Nuclear Information System (INIS)

Dosch, R.G.; Prevender, T.S.

1975-01-01

Various metals may be anodized, and preferably barrier anodized, by anodizing the metal in an electrolyte comprising quaternary ammonium compound having a complex metal anion in a solvent containing water and a polar, water soluble organic material. (U.S.)

The function of microporous layers and the interaction between the anode and cathode in DMFCs

DEFF Research Database (Denmark)

Zhang, H. F.; Wang, SY; Pei, PC

2008-01-01

A combined effect of microporous layers (MPLs) on direct methanol fuel cells (DMFCs) is investigated. From the distribution of the outstanding carbon loading combinations of the cathode MPL and anode MPL as well as the evolutions of polarization curves, a combined effect in which the contributions...

Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer

NARCIS (Netherlands)

Lee, Y.J.; de Jong, Machiel Pieter; van der Wiel, Wilfred Gerard; Kim, Y.; Brock, J.D.

2010-01-01

We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. % Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Directory of Open Access Journals (Sweden)

Rui Sun

2016-06-01

Full Text Available We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100 substrates with a TiN buffer layer. A 50-nm-thick (200-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200-orientated TiN buffer layer and had a highly crystalline structure with the (200 orientation.

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Energy Technology Data Exchange (ETDEWEB)

Sun, Rui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Makise, Kazumasa; Terai, Hirotaka [Advanced ICT Research Institute, National Institute of Information and Communications Technology (Japan); Zhang, Lu [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Wang, Zhen, E-mail: zwang@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Shanghai Tech University, Shanghai 201210 (China)

2016-06-15

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large I{sub c}R{sub N} product of 3.8 mV, a sharp quasiparticle current rise with a ΔV{sub g} of 0.4 mV, and a small subgap leakage current. The junction quality factor R{sub sg}/R{sub N} was about 23 for the junction with a J{sub c} of 47 A/cm{sup 2} and was about 6 for the junction with a J{sub c} of 3.0 kA/cm{sup 2}. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.

Layer-by-layer assembled graphene-coated mesoporous SnO2 spheres as anodes for advanced Li-ion batteries

KAUST Repository

Shahid, Muhammad

2014-10-01

We report layer-by-layer (LBL) assembly of graphene/carbon-coated mesoporous SnO2 spheres (Gr/C-SnO2 spheres), without binder and conducting additives, as anode materials with excellent Li-ion insertion-extraction properties. Our results indicate that these novel LBL assembled electrodes have high reversible Li storage capacity, improved cycling, and especially good rate performance, even at high specific currents. The superior electrochemical performance offered by these LBL assembled Gr/C-SnO2 spheres is attributed to the enhanced electronic conductivity and effective diffusion of Li ions in the interconnected network of nanoparticles forming the mesoporous SnO2 spheres. © 2014 Elsevier B.V. All rights reserved.

Layer-by-layer assembled graphene-coated mesoporous SnO2 spheres as anodes for advanced Li-ion batteries

KAUST Repository

Shahid, Muhammad; Yesibolati, Nulati; Reuter, Mark C.; Ross, Frances M.; Alshareef, Husam N.

2014-01-01

We report layer-by-layer (LBL) assembly of graphene/carbon-coated mesoporous SnO2 spheres (Gr/C-SnO2 spheres), without binder and conducting additives, as anode materials with excellent Li-ion insertion-extraction properties. Our results indicate that these novel LBL assembled electrodes have high reversible Li storage capacity, improved cycling, and especially good rate performance, even at high specific currents. The superior electrochemical performance offered by these LBL assembled Gr/C-SnO2 spheres is attributed to the enhanced electronic conductivity and effective diffusion of Li ions in the interconnected network of nanoparticles forming the mesoporous SnO2 spheres. © 2014 Elsevier B.V. All rights reserved.

The effect of buffer-layer on the steady-state energy release rate of a tunneling crack in a wind turbine blade joint

DEFF Research Database (Denmark)

Jørgensen, Jeppe Bjørn; Sørensen, Bent F.; Kildegaard, Casper

2018-01-01

propagation of tunneling cracks. However, for wind turbine blade relevant material combinations it is found more effective to reduce the thickness of the adhesive layer since the stiffness mismatch between the existing laminate and the adhesive is already high. The effect of material orthotropy was found......The effect of a buffer-layer on the steady-state energy release rate of a tunneling crack in the adhesive layer of a wind turbine blade joint, loaded in tension, is investigated using a parametric 2D tri-material finite element model. The idea of embedding a buffer-layer in-between the adhesive...... and the basis glass fiber laminate to improve the existing joint design is novel, but the implications hereof need to be addressed.The results show that it is advantageous to embed a buffer-layer near the adhesive with controllable thickness-and stiffness properties in order to improve the joint design against...

Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

Energy Technology Data Exchange (ETDEWEB)

Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Parkoun, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Sokol, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

2005-09-30

Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm{sup -3} sulphuric acid at 50 deg. C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate. We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H{sub 3}O{sup +} ions from the electrolyte into the oxide film at the anodizing voltages above 57 V.

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

Science.gov (United States)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

Development of biaxially textured buffer layers on rolled-Ni substrates for high current YBa2Cu3O7-y coated conductors

International Nuclear Information System (INIS)

Paranthaman, M.; Goyal, A.; Norton, D.P.

1996-01-01

This paper describes the development of 3 buffer layer architectures with good biaxial textures on rolled-Ni substrates using vacuum processing techniques. The techniques include pulsed laser ablation, e-beam evaporation, dc and rf magnetron sputtering. The first buffer layer architecture consists of an epitaxial laminate of Ag/Pd(Pt)/Ni. The second buffer layer consists of an epitaxial laminate of CeO 2 /Pd/Ni. The third alternative buffer layer architecture consists of an epitaxial laminate of YSZ/CeO 2 /Ni. The cube (100) texture in the Ni was produced by cold rolling followed by recrystallization. Crystallographic orientations of the Pd, Ag, CeO 2 , and YSZ films grown were all (100). We recently demonstrated a critical- current density of 0.73x10 6 A/cm 2 at 77 K and zero field on 1.4 μm thick YBa 2 Cu 3 O 7-y (YBCO) film. This film was deposited by pulsed laser ablation on a YBCO/YSZ/CeO 2 /Ni substrate

Sm-doped CeO2 single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

International Nuclear Information System (INIS)

Li, G.; Pu, M.H.; Sun, R.P.; Wang, W.T.; Wu, W.; Zhang, X.; Yang, Y.; Cheng, C.H.; Zhao, Y.

2008-01-01

An over 150 nm thick Sm 0.2 Ce 0.8 O 1.9-x (SCO) single buffer layer has been deposited on bi-axially textured NiW (2 0 0) alloy substrate. Highly in-plane and out-of-plane oriented, dense, smooth and crack free SCO single layer has been obtained via a polymer-assisted chemical solution deposition (PACSD) approach. YBCO thin film has been deposited equally via a PACSD route on the SCO-buffered NiW, the as grown YBCO yielding a sharp transition at T c0 = 87 K as well as J c (0 T, 77 K) ∼ 1 MA/cm 2 . These results indicates that RE (lanthanides other than Ce) doping may be an effective approach to improve the critical thickness of solution derived CeO 2 film, which renders it a promising candidate as single buffer layer for YBCO coated conductors

Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate

International Nuclear Information System (INIS)

Ahn, Byung Du; Ko, Young Gun; Oh, Sang Hoon; Song, Jean-Ho; Kim, Hyun Jae

2009-01-01

The present work was made to investigate the effect of oxygen pressure of SiO x layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO x buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiO x layer as a buffer, the electrical resistivity of GZO/SiO x /PET films gradually decreased from 7.6 x 10 -3 to 6.8 x 10 -4 Ω.cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiO x buffer layers. In addition, the average optical transmittance of GZO/SiO x /PET films in a visible regime was estimated to be ∼ 90% comparable to that of GZO deposited onto a glass substrate.

A stable organic-inorganic hybrid layer protected lithium metal anode for long-cycle lithium-oxygen batteries

Science.gov (United States)

Zhu, Jinhui; Yang, Jun; Zhou, Jingjing; Zhang, Tao; Li, Lei; Wang, Jiulin; Nuli, Yanna

2017-10-01

A stable organic-inorganic hybrid layer (OIHL) is direct fabricated on lithium metal surface by the interfacial reaction of lithium metal foil with 1-chlorodecane and oxygen/carbon dioxide mixed gas. This favorable OIHL is approximately 30 μm thick and consists of lithium alkyl carbonate and lithium chloride. The lithium-oxygen batteries with OIHL protected lithium metal anode exhibit longer cycle life (340 cycles) than those with bare lithium metal anode (50 cycles). This desirable performance can be ascribed to the robust OIHL which prevents the growth of lithium dendrites and the corrosion of lithium metal.

Graphene-encapsulated cobalt sulfides nanocages with excellent anode performances for lithium ion batteries

International Nuclear Information System (INIS)

Guo, Jinxue; Li, Fenfen; Sun, Yanfang; Zhang, Xiao; Tang, Lin

2015-01-01

Graphical abstract: Display Omitted -- Highlights: •Graphene wrapped CoS 2 nanocages are synthesized as anode materials. •Layer-by-layer assembled structures are beneficial for fast and stable Li storage. •Hollow features improve capacity, rate capability and cycling life. •The sample shows outstanding lithium storages, especially high-rate performance. -- Abstract: A layer-by-layer assembled composite of graphene nanosheets (GNSs) wrapped monodisperse cobalt sulfides (CoS 2 ) nanocages has been prepared via a solvothermal method. The flexible GNSs in the layered composite act as the effective matrix to encapsulate the monodisperse CoS 2 nanocages, buffer the volume changes and prevent the aggregation of the CoS 2 nanocages during electrochemical cycling. The loosely stacked GNSs, which are induced with the insertion of CoS 2 , are convenient for electrolyte wetting and serve as highway for the rapid electron and lithium transport. The monodisperse nanocages can supply additional space to tolerate the volume changes, shorten lithium diffusion path, and do not tend to aggregate. As a result, the specific sample can deliver a high capacity approaching 800 mA h g −1 after 150 cycles at 100 mA g −1 and 697 mA h g −1 after 300 cycles at 500 mA g −1 , in addition to good capacity retention and excellent rate capability, making it a promising candidate as next-generation anode materials for lithium-ion batteries

Directed Vertical Diffusion of Photovoltaic Active Layer Components into Porous ZnO-Based Cathode Buffer Layers.

Science.gov (United States)

Kang, Jia-Jhen; Yang, Tsung-Yu; Lan, Yi-Kang; Wu, Wei-Ru; Su, Chun-Jen; Weng, Shih-Chang; Yamada, Norifumi L; Su, An-Chung; Jeng, U-Ser

2018-04-01

Cathode buffer layers (CBLs) can effectively further the efficiency of polymer solar cells (PSCs), after optimization of the active layer. Hidden between the active layer and cathode of the inverted PSC device configuration is the critical yet often unattended vertical diffusion of the active layer components across CBL. Here, a novel methodology of contrast variation with neutron and anomalous X-ray reflectivity to map the multicomponent depth compositions of inverted PSCs, covering from the active layer surface down to the bottom of the ZnO-based CBL, is developed. Uniquely revealed for a high-performance model PSC are the often overlooked porosity distributions of the ZnO-based CBL and the differential diffusions of the polymer PTB7-Th and fullerene derivative PC 71 BM of the active layer into the CBL. Interface modification of the ZnO-based CBL with fullerene derivative PCBEOH for size-selective nanochannels can selectively improve the diffusion of PC 71 BM more than that of the polymer. The deeper penetration of PC 71 BM establishes a gradient distribution of fullerene derivatives over the ZnO/PCBE-OH CBL, resulting in markedly improved electron mobility and device efficiency of the inverted PSC. The result suggests a new CBL design concept of progressive matching of the conduction bands. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Anodization of cast aluminium alloys produced by different casting methods

Directory of Open Access Journals (Sweden)

K. Labisz

2008-08-01

Full Text Available In this paper the usability of two casting methods, of sand and high pressure cast for the anodization of AlSi12 and AlSi9Cu3 aluminium cast alloys was investigated. With defined anodization parameters like electrolyte composition and temperature, current type and value a anodic alumina surface layer was produced. The quality, size and properties of the anodic layer was investigated after the anodization of the chosen aluminium cast alloys. The Alumina layer was observed used light microscope, also the mechanical properties were measured as well the abrasive wear test was made with using ABR-8251 equipment. The researches included analyze of the influence of chemical composition, geometry and roughness of anodic layer obtained on aluminum casts. Conducted investigations shows the areas of later researches, especially in the direction of the possible, next optimization anodization process of aluminum casting alloys, for example in the range of raising resistance on corrosion to achieve a suitable anodic surface layer on elements for increasing applications in the aggressive environment for example as materials on working building constructions, elements in electronics and construction parts in air and automotive industry.

Anode pattern formation in atmospheric pressure air glow discharges with water anode

NARCIS (Netherlands)

Verreycken, T.; Bruggeman, P.J.; Leys, C.

2009-01-01

Pattern formation in the anode layer at a water electrode in atmospheric pressure glow discharges in air is studied. With increasing current a sequence of different anode spot structures occurs from a constricted homogeneous spot in the case of small currents to a pattern consisting of small

Growth of thick La2Zr2O7 buffer layers for coated conductors by polymer-assisted chemical solution deposition

International Nuclear Information System (INIS)

Zhang, Xin; Zhao, Yong; Xia, Yudong; Guo, Chunsheng; Cheng, C.H.; Zhang, Yong; Zhang, Han

2015-01-01

Highlights: • We develops a low-cost and high-efficient technology of fabricating LZO buffer layers. • Sufficient thickness LZO buffer layers have been obtained on NiW (2 0 0) alloy substrate. • Highly biaxially textured YBCO thin film has been deposited on LZO/NiW. - Abstract: La 2 Zr 2 O 7 (LZO) epitaxial films have been deposited on LaAlO 3 (LAO) (1 0 0) single-crystal surface and bi-axially textured NiW (2 0 0) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (1 0 0) single-crystal surface; The films deposited on NiW (2 0 0) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa 2 Cu 3 O 7−x (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm 2 at 77 K .These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors

Further contribution to the study of buffer layer on austenitic stainless stell overlays obtained by means of automatic submerged arc welding with electrode-wire

International Nuclear Information System (INIS)

Colla, G.

1988-01-01

The influence of several buffer layer types on a 308 type austenitic stainless steel surface overlay having a 19-21% chromium and 10-12% nikel content have been analysed. Cladding passes have been deposited on carbon steel test samples by using automatic submerged arc welding process with electrode-wire. The experimental tests have involved buffer layers having seven different chemical compositions and the obtained results are reported and discussed in the paper. The achieved experimetal results allow selecting the most suitable buffer layer to be deposited in order to reach the required cladding performance in service

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

Science.gov (United States)

Lee, H-P; Perozek, J; Rosario, L D; Bayram, C

2016-11-21

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {Al x Ga 1-x N}/AlN, (b) Thin-GaN/3 × {Al x Ga 1-x N}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm 2 /V∙s) and 2DEG carrier concentration (>1.0 × 10 13  cm -2 ) on Si(111) substrates.

Post-mortem analysis on LiFePO4|Graphite cells describing the evolution & composition of covering layer on anode and their impact on cell performance

Science.gov (United States)

Lewerenz, Meinert; Warnecke, Alexander; Sauer, Dirk Uwe

2017-11-01

During cyclic aging of lithium-ion batteries the formation of a μm-thick covering layer on top of the anode facing the separator is found on top of the anode. In this work several post-mortem analyses of cyclic aged cylindrical LFP|Graphite cells are evaluated to give a detailed characterization of the covering layer and to find possible causes for the evolution of such a layer. The analyses of the layer with different methods return that it consists to high percentage of plated active lithium, deposited Fe and products of a solid electrolyte interphase (SEI). The deposition is located mainly in the center of the cell symmetrical to the coating direction. The origin of these depositions is assumed in locally overcharged particles, Fe deposition or inhomogeneous distribution of capacity density. As a secondary effect the deposition on one side increases the thickness locally; thereafter a pressure-induced overcharging due to charge agglomeration of the back side of the anode occurs. Finally a compact and dense covering layer in a late state of aging leads to deactivation of the covered parts of the anode and cathode due to suppressed lithium-ion conductivity. This leads to increasing slope of capacity fade and increase of internal resistance.

Influence of the Ti microstructure on anodic self-organized TiO{sub 2} nanotube layers produced in ethylene glycol electrolytes

Energy Technology Data Exchange (ETDEWEB)

Macak, J.M., E-mail: jan.macak@upce.cz [Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, Nam. Cs. Legii 565, 53002 Pardubice (Czech Republic); Jarosova, M. [Laboratory of Nanostructures and Nanomaterials, Institute of Physics of the CAS, v.v.i., Na Slovance 2, 18221 Prague 8 (Czech Republic); Jäger, A. [Department of Structure analysis, Institute of Physics of the CAS, v.v.i., Cukrovarnicka 10, 16200 Prague 6 (Czech Republic); Sopha, H. [Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, Nam. Cs. Legii 565, 53002 Pardubice (Czech Republic); Klementová, M. [Institute of Inorganic Chemistry of the CAS, v.v.i., Husinec-Rez 1001, Rez 25068 (Czech Republic)

2016-05-15

Highlights: • The microstructure of Ti substrates investigated by EBSD. • Comparison of polished vs. unpolished substrates was carried out. • Grain orientation influences the uniformity of self-organized TiO{sub 2} nanotubes. • Tubes with different average diameter grow on grains with different orientation. • Grain size and boundaries influence the number of flaws in the tube layers. - Abstract: The relationship between the microstructure of Ti substrates and the anodic growth of self-organized TiO{sub 2} nanotube layers obtained upon their anodization in the ethylene glycol based electrolytes on these substrates is reported for the first time. Polished Ti sheets with mirror-like surface as well as unpolished Ti foils were considered in this work. Grains with a wide range of crystallographic orientations and sizes were revealed by Electron Backscatter Diffraction (EBSD) and correlated with nanotube growth on both types of substrates. A preferred grain orientation with [0 0 0 1] axis perpendicular to the surface was observed on all substrates. Surfaces of all substrates were anodized for 18 h in ethylene glycol electrolytes containing 88 mM NH{sub 4}F and 1.5% water and thoroughly inspected by SEM. By a precise comparison of Ti substrates before and after anodization, the uniformity of produced self-organized TiO{sub 2} nanotube layers was evaluated in regard to the specific orientation of individual grains. Grains with [0 0 0 1] axis perpendicular to the surface turned out to be the most growth-promoting orientation on polished substrates. No orientation was found to be strictly growth-retarding, but sufficient anodization time (24 h) was needed to obtain uniform nanotube layers on all grains without remnant porous initial oxide. In contrast with polished Ti sheets, no specific orientation was found to significantly promote or retard the nanotube growth in the case of unpolished Ti foils. Finally, the difference between the average nanotube diameters of

Development and application of a green-chemistry solution deposition technique for buffer layer coating on cube-textured metal substrates in view of further deposition of rare-earth based superconductors

DEFF Research Database (Denmark)

Pallewatta, Pallewatta G A P

which consist of YBCO superconducting coatings on cube-textured Ni based alloy tapes.  Before the epitaxial deposition this superconducting layer, a buffer layer is applied on the metal substrate as a diffusion barrier which is also required to transfer the strong texture of the underlying substrate......, allowing the epitaxial growth of the superconducting layer. State-of-the-art coated conductor hetero structures are mainly based on CeO2 based buffer stacks that consist of a sequence of several different buffer layers. Buffer layers deposited by continuous chemical deposition techniques, which...... is expected to be very advantageous in reel-to-reel applications. The thickness of these SrTiO3 monolayers was large enough to stop the nickel and copper diffusion from the Cu/Ni substrate. Hence, the developed high quality buffer layers are expected to be acting as efficient diffusion barriers and also...

Evaluation of methods for application of epitaxial layers of superconductor and buffer layers

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-06-01

The recent achievements in a number of laboratories of critical currents in excess of 1.0x10{sup 6} amp/cm{sup 2} at 77K in YBCO deposited over suitably textured buffer/substrate composites have stimulated interest in the potential applications of coated conductors at high temperatures and high magnetic fields. As of today, two different approaches for obtaining the textured substrates have been identified. These are: Los Alamos National Laboratory`s (LANL) ion-beam assisted deposition called IBAD, to obtain a highly textured yttria-stabilized zirconia (YSZ) buffer on nickel alloy strips, and Oak Ridge National Laboratory`s (ORNL) rolling assisted, bi-axial texturized substrate option called RABiTS. Similarly, based on the published literature, the available options to form High Temperature Superconductor (HTS) films on metallic, semi-metallic or ceramic substrates can be divided into: physical methods, and non-physical or chemical methods. Under these two major groups, the schemes being proposed consist of: - Sputtering - Electron-Beam Evaporation - Flash Evaporation - Molecular Beam Epitaxy - Laser Ablation - Electrophoresis - Chemical Vapor Deposition (Including Metal-Organic Chemical Vapor Deposition) - Sol-Gel - Metal-Organic Decomposition - Electrodeposition, and - Aerosol/Spray Pyrolysis. In general, a spool- to-spool or reel-to-reel type of continuous manufacturing scheme developed out of any of the above techniques, would consist of: - Preparation of Substrate Material - Preparation and Application of the Buffer Layer(s) - Preparation and Application of the HTS Material and Required Post-Annealing, and - Preparation and Application of the External Protective Layer. These operations would be affected by various process parameters which can be classified into: Chemistry and Material Related Parameters; and Engineering and Environmental Based Parameters. Thus, one can see that for successful development of the coated conductors manufacturing process, an

Studies on Ba(2)YNbO(6) Buffer Layers for Subsequent YBa(2)Cu(3)O(7-x) Film Growth

National Research Council Canada - National Science Library

Sathiraju, Srinivas; Barnes, Paul N; Varanasi, Chakrapani; Wheeler, Robert

2004-01-01

In this paper, we are reporting a dielectric oxide buffer Ba(2)YNbO(6) (BYNO) and its performance on various substrates for a potential buffer layer for the growth of YBa(2)Cu(3)O(7-x) (YBCO) coated conductors. Ba(2)YNbO(6...

Fabrication of porous anodic alumina films by using two-step anodization process

International Nuclear Information System (INIS)

Xu Zhan; Zhou Bin; Xu Xiang; Wang Xiaoli; Wu Di; Shen Jun

2006-01-01

This article introduces the fabrication of the porous anodic alumina films which have ordered pore arrangement by using a two-step anodization process. The films have a parallel channel structure which nanopore diameter can be 20-100 nm, and depth can reach 50 μm. The change of pore structure in the first and second anodization, moving the alumina layer, widening process was analysed. The effect of the parameters such as different electrolytes, anodization temperature and the voltage on the nanopore structure was studied. The surface and profile structure through FE-SEM (field emission scanning electron microscope), the element composition in tiny area of the anodic aluminum oxide (AAO) surface were studied. The result indicates the pore diameter of AAO which is anodized in oxalic acid solution is larger than which anodized in sulfuric acid solution. The anodization temperature and voltage can enlarge the nanopore diameter of AAO in a range. (authors)

Strontium Titanate Buffer Layers on Cu/33%Ni Substrates using a Novel Solution Chemistry

DEFF Research Database (Denmark)

Pallewatta, Pallewatta G A P; Yue, Zhao; Hui, Tian

2013-01-01

SrTiO3 is a widely studied perovskite material due to its advantages as a buffer template which can be simply applied between a metal substrate tape and a superconducting layer in 2G high temperature superconducting (HTS) tapes. In this study, heteroepitaxial SrTiO3 thin films were deposited on t...

Environmental Modeling, The Buffer Priority layers for Phosphorus / Sediment) Removal identify priority forest/grass buffer opportunities by subwatershed. Land use, hydrology, soil, and landscape characteristics were analyzed to rank buffer opportunities with high P/sed removal., Published in 2014, Smaller than 1:100000 scale, Maryland Department of Natural Resources (DNR).

Data.gov (United States)

NSGIC Education | GIS Inventory — Environmental Modeling dataset current as of 2014. The Buffer Priority layers for Phosphorus / Sediment) Removal identify priority forest/grass buffer opportunities...

Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

Energy Technology Data Exchange (ETDEWEB)

Shin, C.M.; Lee, J.Y.; Heo, J.H.; Park, J.H.; Kim, C.R. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-07-30

In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.

Effect of the co-spun anode functional layer on the performance of the direct-methane microtubular solid oxide fuel cells

Science.gov (United States)

Meng, Xiuxia; Gong, Xun; Yin, Yimei; Yang, Naitao; Tan, Xiaoyao; Ma, Zi-Feng

2014-02-01

NiO-YSZ/porous YSZ (NiO-YSZ/p-YSZ) dual-layer hollow fibers have been fabricated by a co-spinning-sintering method, on which a dense YSZ films has been formed by a dip-coating and sintering process. A LSM-YSZ ink has been dip-coated on the dense YSZ films as cathode, while the Cu-CeO2 carbon-resistant catalyst has been impregnated in the p-YSZ layer to form double-anode supported micro tubular fuel cells (MT-SOFCs). The thickness of the Ni-YSZ layer, so called anode functional layer (AFL), is controlled from 74 μm to 13 μm by varying the spinning rates of the NiO-YSZ dopes. The maximum power density of an MT-SOFC, which is fabricated based on a thin co-spun AFL, reaches 566 mW cm-2 operated at 850 °C fed with dry methane, and is stably operated for 85 h without power declination.

Comparison of analytical possibilities of inversion voltammetry of tellurium with cathodic and anodic potential scanning taking layer-by-layer analysis of GaAs-Te films as example

International Nuclear Information System (INIS)

Kaplin, A.A.; Portnyagina, Eh.O.; Gridaev, V.F.

1979-01-01

Possibility of application in analytical purposes of the process of tellurium precipitation electrosolution from the surfaces of graphite and mercury-graphite electrodes at the cathode scanning of the potential is shown. As a result of comparison of direct and inversion scanning with cathodic and anodic scanning of the potential, variants of voltammetric method of tellurium determination in artificial solutions and, taking the developed method of layer-by-layer analysis of the GaAsTe films as an example, advantage of mercury-graphite electrode with cathodic scanning as compared to graphite electrode with cathode scanning of the potential is shown. Reproducibility of the GaAs film analysis results according to anodic and cathodic tellurium peaks is satisfactory. Maximum deviation from the results of analysis of oxidation peaks and tellurium peduction does not exceed 15 rel. %. Thus, for tellurium concentrations, exceeding 5x10 -6 g-ion/l, both anodic and cathodic scanning of the potential can be used, though error in tellurium determination according to cathodic peaks is 1.5-2.0 times higher. At tellurium amounts lower 5x10 -6 g-ion/l the determination should be carried out according to the peaks of tellurium anodic oxidation from the surface of graphite electrode or according to the peaks of tellurium cathodic reduction from the surface of mercury-graphite electrode

Self-organized criticality: An interplay between stable and turbulent regimes of multiple anodic double layers in glow discharge plasma

Science.gov (United States)

Alex, Prince; Carreras, Benjamin Andres; Arumugam, Saravanan; Sinha, Suraj Kumar

2018-05-01

The role of self-organized criticality (SOC) in the transformation of multiple anodic double layers (MADLs) from the stable to turbulent regime has been investigated experimentally as the system approaches towards critical behavior. The experiment was performed in a modified glow discharge plasma setup, and the initial stable state of MADL comprising three concentric perceptible layers was produced when the drift velocity of electrons towards the anode exceeds the electron thermal velocity (νd ≥ 1.3νte). The macroscopic arrangement of both positive and negative charges in opposite layers of MADL is attributed to the self-organization scenario. Beyond νd ≥ 3νte, MADL begins to collapse and approaches critical and supercritical states through layer reduction which continue till the last remaining layer of the double layer is transformed into a highly unstable radiant anode glow. The avalanche resulting from the collapse of MADL leads to the rise of turbulence in the system. Long-range correlations, a key signature of SOC, have been explored in the turbulent floating potential fluctuations using the rescaled-range analysis technique. The result shows that the existence of the self-similarity regime with self-similarity parameter H varies between 0.55 and 0.91 for time lags longer than the decorrelation time. The power law tail in the rank function, slowly decaying tail of the autocorrelation function, and 1/f behavior of the power spectra of the fluctuations are consistent with the fact that SOC plays a conclusive role in the transformation of MADL from the stable to turbulent regime. Since the existence of SOC gives a measure of complexity in the system, the result provides the condition under which complexity arises in cold plasma.

Improved (0 0 1)-texture of FePt-C for heat-assisted magnetic recording media by insertion of Cr buffer layer

Energy Technology Data Exchange (ETDEWEB)

Shiroyama, T.; Wang, J.; Felicia, A.; Takahashi, Y.K.; Hono, K., E-mail: kazuhiro.hono@nims.go.jp

2017-06-15

Highlights: • Improvement of (0 0 1)-texture of prototype FePt-C granular films for heat heat assisted magnetic recording media. • Insertion of Cr buffer layer improves the crystallographic textures of the MgO underlayers, thereby reduces in-plane component in the FePt-C recording layer. • The growth in the grain size of the MgO underlayer as well as the (0 0 1)-texture of the MgO underlayer are the key factor in reducing the in-plane component in the FePt-C recording layer. - Abstract: FePt-C granular films deposited on MgO underlayers are the prototype media for heat-assisted magnetic recording. To reduce the in-plane magnetic component in the FePt-C media, we investigated the effect of Cr buffer layers on the crystallographic textures of the MgO underlayers and the resultant magnetic properties of the FePt-C layers. By growing a MgO underlayer on a Cr buffer layer, the (0 0 1) texture of the MgO underlayer is improved, on which the in-plane component of a FePt-C film is substantially reduced. We conclude that the growth in the grain size of the MgO underlayer is the key factor in reducing the in-plane component in the FePt-C recording layer.

The stochastic nuclide transport model for buffer/backfill materials

International Nuclear Information System (INIS)

Ma Liping; Han Yongguo

2014-01-01

Currently, study on nuclide migration law in geological disposal repository of high level waste is assumed buffer/backfill layer to be continuous medium, utilized the continuity equation, equation of state, the equations of motion, etc, formed a set of theory and method to estimate nuclide concentration distribution in buffer/backfill layer, and provided an important basis for nuclide migration rules of repository. However, it is necessary to study the buffer/backfill layer microstructure and subtly describe the pore structure and fracture system of the buffer/backfill layer, and reflect the changes in connectivity and in different directions of the buffer/backfill layer. Through using random field theory, the nuclide transport for the buffer/backfill layer in geological disposal repository of nuclear waste is described in the paper. This paper mainly includes that, t represents the time, ξ t ⊂ Z d = d represents the integer lattice, Z represents collectivity integers, d = l, 2, 3, for instance, d = 2, Z d = {(m, n) : m, n ∈ Z} the state point of ξ t is typically considered to be occupied by the nuclide concentration values of the buffer/backfill layer, ξ t also represents random set in the diagram of two dimensional integer lattice, namely, t ∈ [0, T], {ξ t ,0 ≤ t ≤ ⊂ T} Consequently, according to the stochastic process obtained above, the changes of the nuclide concentration values of the buffer/backfill layer or the buffer/backfill laboratory materials in the repository with the time can be known. (authors)

Effect of the thickness of the anode electrode catalyst layers on the performance in direct methanol fuel cells

Science.gov (United States)

Glass, Dean E.; Olah, George A.; Prakash, G. K. Surya

2017-06-01

For the large scale fuel cell manufacture, the catalyst loading and layer thickness are critical factors affecting the performance and cost of membrane electrode assemblies (MEAs). The influence of catalyst layer thicknesses at the anode of a PEM based direct methanol fuel cell (DMFC) has been investigated. Catalysts were applied with the drawdown method with varied thicknesses ranging from 1 mil to 8 mils (1 mil = 25.4 μm) with a Pt/Ru anode loading of 0.25 mg cm-2 to 2.0 mg cm-2. The MEAs with the thicker individual layers (8 mils and 4 mils) performed better overall compared to the those with the thinner layers (1 mil and painted). The peak power densities for the different loading levels followed an exponential decrease of Pt/Ru utilization at the higher loading levels. The highest power density achieved was 49 mW cm-2 with the 4 mil layers at 2.0 mg cm-2 catalyst loading whereas the highest normalized power density was 116 mW mg-1 with the 8 mil layers at 0.25 mg cm-2 loading. The 8 mil drawdowns displayed a 50% and 23% increase in normalized power density compared to the 1 mil drawdowns at 0.25 mg cm-2 and 0.5 mg cm-2 loadings, respectively.

Effect of plasma molybdenized buffer layer on adhesive properties of TiN film coated on Ti6Al4V alloy

Energy Technology Data Exchange (ETDEWEB)

Qin, Lin, E-mail: qinlin@tyut.edu.cn; Yi, Hong; Kong, Fanyou; Ma, Hua; Guo, Lili; Tian, Linhai; Tang, Bin

2017-05-01

Highlights: • A molybdenized layer was prepared as a buffer layer under TiN film on Ti6Al4V. • The molybdenized layer can enhance adhesion strength of PVD coatings effectively. • The duplex treated samples increase elastic energy ratio in the impact tests. • The enhancement attributes to the hardness improvement and inverted-S shape elastic modulus profile of the modified layer. - Abstract: Effect of molybdenized buffer layer on adhesion strength of TiN film on Ti6Al4V alloy was investigated. The buffer layer composed of a dense molybdenum deposition layer, a rapid drop zone and a slow fall zone was prepared using double glow plasma surface alloying technique. Scratch tests and low energy repeated impact tests were adopted to comparatively evaluate the duplex treated layers and the single TiN samples. The results show that the critical load was increased from 62 N for the single TiN film to over 100 N for the duplex treated layer. The volume of impact pit, formed in impact tests, of the single TiN samples is 9.15 × 10{sup 6} μm{sup 3}, and about 1.5 times than that of the duplex treated samples. The Leeb hardness values reveal that about 70% impact energy was transferred to the single TiN samples to generate permanent deformation, while that was only about 47% for the duplex treated samples. The mechanism of improving adhesion strength is attributed to synergistic effect due to an inverted-S shape elastic modulus distribution produced by the molybdenized layer.

In-situ laser processing and microstructural characteristics of YBa2Cu3O7-δ thin films on Si with TiN buffer layer

International Nuclear Information System (INIS)

Tiwari, P.; Zheleva, T.; Narayan, J.

1993-01-01

The authors have prepared high-quality superconducting YBa 2 Cu 3 O 7 -δ (YBCO) thin films on Si(100) with TiN as a buffer layer using in-situ multitarget deposition system. Both TiN and YBCO thin films were deposited sequentially by KrF excimer laser ( | = 248 nm ) at substrate temperature of 650 C . Thin films were characterized using X-ray diffraction (XRD), four-point-probe ac resistivity, scanning electron microscopy (S E M), transmission electron microscopy (TEM), and Rutherford backscattering (RBS). The TiN buffer layer was epitaxial and the epitaxial relationship was found to be cube on cube with TiN parallel Si. YBCO thin films on Si with TiN buffer layer showed the transition temperature of 90-92K with T co (zero resistance temperature) of 84K. The authors have found that the quality of the buffer layer is very important in determining the superconducting transition temperature of the thin film. The effects of processing parameters and the correlation of microstructural features with superconducting properties are discussed in detail

Sm-doped CeO{sub 2} single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

Energy Technology Data Exchange (ETDEWEB)

Li, G.; Pu, M.H.; Sun, R.P.; Wang, W.T.; Wu, W.; Zhang, X.; Yang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Zhao, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)], E-mail: yzhao@home.swjtu.edu.cn

2008-10-20

An over 150 nm thick Sm{sub 0.2}Ce{sub 0.8}O{sub 1.9-x} (SCO) single buffer layer has been deposited on bi-axially textured NiW (2 0 0) alloy substrate. Highly in-plane and out-of-plane oriented, dense, smooth and crack free SCO single layer has been obtained via a polymer-assisted chemical solution deposition (PACSD) approach. YBCO thin film has been deposited equally via a PACSD route on the SCO-buffered NiW, the as grown YBCO yielding a sharp transition at T{sub c0} = 87 K as well as J{sub c}(0 T, 77 K) {approx} 1 MA/cm{sup 2}. These results indicates that RE (lanthanides other than Ce) doping may be an effective approach to improve the critical thickness of solution derived CeO{sub 2} film, which renders it a promising candidate as single buffer layer for YBCO coated conductors.

Tandem organic light-emitting diodes with buffer-modified C60/pentacene as charge generation layer

Science.gov (United States)

Wang, Zhen; Zheng, Xin; Liu, Fei; Wang, Pei; Gan, Lin; Wang, Jing-jing

2017-09-01

Buffer-modified C60/pentacene as charge generation layer (CGL) is investigated to achieve effective performance of charge generation. Undoped green electroluminescent tandem organic light-emitting diodes (OLEDs) with multiple identical emissive units and using buffer-modified C60/pentacene organic semiconductor heterojunction (OHJ) as CGL are demonstrated to exhibit better current density and brightness, compared with conventional single-unit devices. The current density and brightness both can be significantly improved with increasing the thickness of Al. However, excessive thickness of Al seriously decreases the transmittance of films and damages the interface. As a result, the maximum current efficiency of 1.43 cd·A-1 at 30 mA·cm-2 can be achieved for tandem OLEDs with optimal thickness of Al. These results clearly demonstrate that Cs2CO3/Al is an effective buffer for C60/pentacene-based tandem OLEDs.

Anodic growth of titanium dioxide nanostructures

DEFF Research Database (Denmark)

2010-01-01

Disclosed is a method of producing nanostructures of titanium dioxide (TiO 2 ) by anodisation of titanium (Ti) in an electrochemical cell, comprising the steps of: immersing a non-conducting substrate coated with a layer of titanium, defined as the anode, in an electrolyte solution...... an electrical contact to the layer of titanium on the anode, where the electrical contact is made in the electrolyte solution...

The effects of ultra-thin cerium fluoride film as the anode buffer layer on the electrical characteristics of organic light emitting diodes

Science.gov (United States)

Lu, Hsin-Wei; Tsai, Cheng-Che; Hong, Cheng-Shong; Kao, Po-Ching; Juang, Yung-Der; Chu, Sheng-Yuan

2016-11-01

In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3film as an ultra-thin buffer layer between the indium tin oxide (ITO) electrode and α-naphthylphenylbiphenyldiamine (NPB) hole transport layer, with the structure configuration ITO/CeF3 (0.5, 1, and 1.5 nm)/α-naphthylphenylbiphenyl diamine (NPB) (40 nm)/tris(8-hydroxyquinoline) aluminum (Alq3) (60 nm)/lithium fluoride (LiF) (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy results revealed the formation of the UV-ozone treated CeF3 film. The work function increased from 4.8 eV (standard ITO electrode) to 5.22 eV (0.5-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The surface roughness of the UV-ozone treated CeF3 film was smoother than that of the standard ITO electrode. Further, the UV-ozone treated CeF3 film increased both the surface energy and polarity, as determined from contact angle measurements. In addition, admittance spectroscopy measurements showed an increased capacitance and conductance of the OLEDs. Accordingly, the turn-on voltage decreased from 4.2 V to 3.6 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 24760 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.8 cd/A when the 0.5-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

Science.gov (United States)

Moore, Andrew

Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of Cd

Anodization of Aluminium using a fast two-step process

Indian Academy of Sciences (India)

283.6 eV. Keywords. Anodization; phosphoric acid; anodization time; anodized aluminium oxide; aluminium. ... of anodization.5–7 The AAO layer has a large band gap, good ..... transmittance increases as the anodised membrane is heated to ...

ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells

Science.gov (United States)

Bhattacharya, Raghu N [Littleton, CO

2009-11-03

The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2Buffer Layers in Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Jiang Chunhua

2009-01-01

Full Text Available Abstract This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs. The nanowire films with the thick ZnO buffer layer (~0.8–1 μm thick can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, however, and cause the decrease of dye loading absorbed on ZnO nanowires. In order to further investigate the effect of TiO2buffer layer on the performance of ZnO nanowire-based DSSCs, compared with the ZnO nanowire-based DSSCs without a compact TiO2buffer layer, the photovoltaic conversion efficiency and open circuit voltage of the ZnO DSSCs with the compact TiO2layer (~50 nm thick were improved by 3.9–12.5 and 2.4–41.7%, respectively. This can be attributed to the introduction of the compact TiO2layer prepared by sputtering method, which effectively suppressed carrier recombination occurring across both the film–electrolyte interface and the substrate–electrolyte interface.

High Performance Nano-Constituent Buffer Layer Thin Films to Enable Low Cost Integrated On-the-Move Communications Systems

National Research Council Canada - National Science Library

Cole, M. W; Nothwang, W. D; Hubbard, C; Ngo, E; Hirsch, S

2004-01-01

.... Utilizing a coplanar device design we successfully designed, fabricated, characterized, and optimized a high performance Ta2O5 thin film passive buffer layer on Si substrates, which will allow...

Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

NARCIS (Netherlands)

Plissard, S.R.; Coinon, C.; Androussi, Y.; Wallart, X.

2010-01-01

The strain relaxation in low mismatched InxAl1-xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first "strained

About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors

Directory of Open Access Journals (Sweden)

E Pankratov

2016-10-01

Full Text Available In this paper we introduce an approach to manufacture a heterobipolar transistors. Framework this approach we consider doping by diffusion or by ion implantation of required parts of a heterostructure with special configuration and optimization of annealing of dopant and/or radiation defects. In this case one have possibility to manufacture bipolar transistors, which include into itself p-n-junctions with higher sharpness and smaller dimensions. We also consider influence of presents of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in the considered transistors. An approach to decrease value of mismatch-induced stress has been considered.

The design of a Li-ion full cell battery using a nano silicon and nano multi-layer graphene composite anode

Science.gov (United States)

Eom, KwangSup; Joshi, Tapesh; Bordes, Arnaud; Do, Inhwan; Fuller, Thomas F.

2014-03-01

In this study, a Si-graphene composite, which is composed of nano Si particles and nano-sized multi-layer graphene particles, and micro-sized multi-layer graphene plate conductor, was used as the anode for Li-ion battery. The Si-graphene electrode showed the high capacity and stable cyclability at charge/discharge rate of C/2 in half cell tests. Nickel cobalt aluminum material (NCA) was used as a cathode in the full cell to evaluate the practicality of the new Si-graphene material. Although the Si-graphene anode has more capacity than the NCA cathode in this designed full cell, the Si-graphene anode had a greater effect on the full-cell performance due to its large initial irreversible capacity loss and continuous SEI formation during cycling. When fluoro-ethylene carbonate was added to the electrolyte, the cyclability of the full cell was much improved due to less SEI formation, which was confirmed by the decreases in the 1st irreversible capacity loss, overpotential for the 1st lithiation, and the resistance of the SEI.

Chemical-bath ZnO buffer layer for CuInS{sub 2} thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A.; Weber, M.; Scheer, R.; Lewerenz, H.J. [Hahn-Meitner-Institut, Abt. Grenzflaechen, Bereich Physikalische Chemie, Glienicker Strasse 100, D-14109 Berlin (Germany)

1998-07-13

ZnO buffer layers were grown by a chemical-bath deposition (CBD) in order to improve the interface quality in p-CuInS{sub 2} based solar cells, to improve the light transmission in the blue wavelength region, but also as an alternative to eliminate the toxic cadmium. The process consists of immersion of different substrates (glass, CIS) in a dilute solution of tetraamminezinc II, [Zn(NH{sub 2}){sub 4}]{sup 2+}, complex at 60-95C. During the growth process, a homogeneous growth mechanism which proceeds by the sedimentation of a mixture of ZnO and Zn(OH){sub 2} clusters formed in solution, competes with the heterogeneous growth mechanism. The mechanism consists of specific adsorption of a complex Zn(II) followed by a chemical reaction. The last process of growth results in thin, hard, adherent and specularly reflecting films. The characterization of the deposited CBD-ZnO layers was performed by X-ray diffraction (XRD), optical transmittance, scanning electron microscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The as-deposited films on glass show hexagonal zincite structure with two preferred orientations (1 0 0) and (1 0 1). High optical transmittance up to 80% in the near-infrared and part of the visible region was observed. The low growth rate of the films on CIS suggests an atomic layer-by-layer growth process.The device parameters and performance are compared to heterojunction with a standard CdS buffer layer

Layered double hydroxides for preparing CoMn_2O_4 nanoparticles as anodes of lithium ion batteries

International Nuclear Information System (INIS)

Pan, Xu; Ma, Jingjing; Yuan, Ruo; Yang, Xia

2017-01-01

In the field of lithium-ion batteries, CoMn_2O_4 as an anode material has attracted a wide attention because it inherited the splendid electrochemical performances of Mn and Co-based metal oxides. Compared to graphite, Co-based oxides have a higher capacity which is about twice of the graphite. Moreover, Mn-based oxides have lower operating voltages and manganese exists abundantly in nature. Layered double hydroxides (LDHs), similar with brucite structure, were used as precursor for CoMn_2O_4 nanoparticles in this work. Under high temperature process, the LDHs decomposed to CoMn_2O_4 nanoparticles. When evaluated as anode materials for lithium ion batteries, the CoMn_2O_4 nanoparticles behaved good electrochemical performance with the discharge and charge capacity of 733 mAh g"-"1 and 721 mAh g"-"1 at current density of 200 mA g"-"1 after 100 cycles. This method for preparing CoMn_2O_4 nanoparticles is easy, which may provide a way for synthesis of other bimetallic oxides and anodes of lithium ion batteries. - Highlights: • Layered double hydroxides were employed as precursors to synthesize CoMn_2O_4. • The CoMn_2O_4 nanoparticles behaved good electrochemical performance. • This study provides a guideline for preparing bimetallic oxides.

Process for anodizing aluminum foil

International Nuclear Information System (INIS)

Ball, J.A.; Scott, J.W.

1984-01-01

In an integrated process for the anodization of aluminum foil for electrolytic capacitors including the formation of a hydrous oxide layer on the foil prior to anodization and stabilization of the foil in alkaline borax baths during anodization, the foil is electrochemically anodized in an aqueous solution of boric acid and 2 to 50 ppm phosphate having a pH of 4.0 to 6.0. The anodization is interrupted for stabilization by passing the foil through a bath containing the borax solution having a pH of 8.5 to 9.5 and a temperature above 80 0 C. and then reanodizing the foil. The process is useful in anodizing foil to a voltage of up to 760 V

Organic Light Emitting Diodes with Opal Photonic Crystal Layer and Carbon Nanotube Anode

Science.gov (United States)

Ovalle Robles, Raquel; Del Rocio Nava, Maria; Williams, Christopher; Zhang, Mei; Fang, Shaoli; Lee, Sergey; Baughman, Ray; Zakhidov, Anvar

2007-03-01

We report electroluminescence intensity and spectral changes in light emission from organic light emitting diode (OLEDs) structures, which have thin transparent films of opal photonic crystal (PC). The anode in such PC-OLED is laminated on opal layer from free standing optically transparent multiwall carbon nanotubes (T-CNT) sheets made by dry spinning from CVD grown forests. Silica and polystyrene opal films were grown on glass substrates by vertical sedimentation in colloids in thermal baths and the particle size of opal spheres ranges from 300 nm to 450 nm. The use of T-CNTs, (coated by PEDOT-PSS to avoid shorting) as hole injector, allows to eliminate the use of vacuum deposition of metals and permits to achieve tunneling hole injection regime from CNT tips into Alq^3 emission layer

Efficient suppression of nanograss during porous anodic TiO2 nanotubes growth

Science.gov (United States)

Gui, Qunfang; Yu, Dongliang; Li, Dongdong; Song, Ye; Zhu, Xufei; Cao, Liu; Zhang, Shaoyu; Ma, Weihua; You, Shiyu

2014-09-01

When Ti foil was anodized in fluoride-containing electrolyte for a long time, undesired etching-induced "nanograss" would inevitably generate on the top of porous anodic TiO2 nanotubes (PATNTs). The nanograss will hinder the ions transport and in turn yield depressed (photo) electrochemical performance. In order to obtain nanograss-free nanotubes, a modified three-step anodization and two-layer nanostructure of PATNTs were designed to avoid the nanograss. The first layer (L1) nanotubes were obtained by the conventional two-step anodization. After washing and drying processes, the third-step anodization was carried out with the presence of L1 nanotubes. The L1 nanotubes, serving as a sacrificed layer, was etched and transformed into nanograss, while the ultralong nanotubes (L2) were maintained underneath the L1. The bi-layer nanostructure of the nanograss/nanotubes (L1/L2) was then ultrasonically rinsed in deionized water to remove the nanograss (L1 layer). Then much longer nanotubes (L2 layer) with intact nanotube mouths could be obtained. Using this novel approach, the ultralong nanotubes without nanograss can be rationally controlled by adjusting the anodizing times of two layers.

Investigations into alterntive substrate, absorber, and buffer layer processing for Cu(In,Ga)Se{sub 2}-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Tuttle, J.R.; Berens, T.A.; Keane, J. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

High-performance Cu(In,Ga)Se{sub 2}(CIGS)-based solar cells are presently fabricated within a narrow range of processing options. In this contribution, alternative substrate, absorber, and buffer layer processing is considered. Cell performance varies considerably when alternative substrates are employed. These variations are narrowed with the addition of Na via a Na{sub 2}S compound. Sputtered and electrodeposited CIGS precursors and completed absorbers show promise as alternatives to evaporation. A recrystallization process is required to improve their quality. (In,Ga){sub y}Se buffer layers contribute to cell performance above 10. Further improvements in these alternatives will lead to combined cell performance greater than 10% in the near term.

Numerical analysis of the influence of buffer layer thickness on the residual stresses in YBCO/La2Zr2O7/Ni superconducting materials

International Nuclear Information System (INIS)

Celik, Erdal; Sayman, Onur; Karakuzu, Ramazan; Ozman, Yilmaz

2007-01-01

The present paper addresses a numerical investigation of the influence of buffer layer thickness on the residual stress in YBCO/La 2 Zr 2 O 7 /Ni architectured materials under cryogenic conditions by using classical lamination theory (CLT) and finite element method (FEM) for coated conductor applications. YBCO/La 2 Zr 2 O 7 multilayer films were fabricated on Ni tape substrate using reel-to-reel sol-gel and pulse laser deposition (PLD) systems. The microstructural evolution of high temperature superconducting YBCO film and buffer layers with La 2 Zr 2 O 7 configuration grown on textured Ni tape substrates was investigated by using a scanning electron microscope (SEM). Thermal stress analysis of YBCO/La 2 Zr 2 O 7 /Ni multilayer sample was performed by using CLT in the temperature range of 298-175 K in liquid helium media. The YBCO/La 2 Zr 2 O 7 /Ni sample strip was solved by using FEM for linear or nonlinear cases in the temperature range of 298-3 K in liquid helium media. SEM observations revealed that crack-free, pinhole-free, continuous superconducting film and buffer layer were obtained by sol-gel and PLD systems. In addition to microstructural observations, it was found that the largest compressive stresses and failure occur in La 2 Zr 2 O 7 buffer layer due to its smallest thermal expansion coefficient. The thickness of La 2 Zr 2 O 7 buffer layer affects the failure. The stress component of σ x is the smallest in Ni tape substrate due to its largest thickness

Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi

2012-01-01

a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

Atmospheric spatial atomic-layer-deposition of Zn(O, S) buffer layer for flexible Cu(In, Ga)Se2 solar cells: From lab-scale to large area roll to roll processing

NARCIS (Netherlands)

Frijters, C.H.; Bolt, P.J.; Poodt, P.W.G.; Knaapen, R.; Brink, J. van den; Ruth, M.; Bremaud, D.; Illiberi, A.

2016-01-01

In this manuscript we present the first successful application of a spatial atomic-layer-deposition process to thin film solar cells. Zn(O,S) has been grown by spatial atomic layer deposition (S-ALD) at atmospheric pressure and applied as buffer layer in rigid and flexible CIGS cells by a lab-scale

Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Shang, X Z; Wu, S D; Liu, C; Wang, W X; Guo, L W; Huang, Q; Zhou, J M

2006-01-01

Low-temperature step-graded InAlAs metamorphic buffer layers on GaAs substrate grown by molecular beam epitaxy were investigated. The strain relaxation and the composition of the top InAlAs layer were determined by high-resolution triple-axis x-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed. Surface morphology was observed by reflection high-energy electron diffraction pattern and atomic force microscopy. Under a selected range of growth parameters, the root mean square surface roughness of the sample grown at 380 deg. C is 0.802 nm, which has the smallest value compared with those of other samples. Furthermore, The ω-2θ and ω scans of the triple-axis x-ray diffraction, and photoluminescence show the sample grown at 380 deg. C has better crystalline quality. With decreasing As overpressure at this growth temperature, crystalline quality became poor and could not maintain two dimensional growth with increasing overpressure. The carrier concentrations and Hall mobilities of the InAlAs/ InGaAs/GaAs MM-HEMT structure on low-temperature step-graded InAlAs metamorphic buffer layers grown in optimized conditions are high enough to make devices

Anodization and Optical Appearance of Sputter Deposited Al-Zr Coatings

DEFF Research Database (Denmark)

Gudla, Visweswara Chakravarthy; Canulescu, Stela; Shabadi, Rajashekhara

2014-01-01

of the anodized layer. The microstructure of the coating is found to influence the appearance of anodized layer owing to the presence of completely or partially dissolved second phases during anodizing process. Oxidation status of the second phase particles in the coatings affected the light absorption......Anodized Al alloy components are extensively used in various applications like architectural, decorative and automobiles for corrosion protection and/or decorative optical appearance. However, tailoring the anodized layer for specific optical appearance is limited due to variation in composition...... and microstructure of the commercial alloys, and even more difficult with recycled alloys. Sputter coating methods promise to control the chemical composition of the Al alloy surfaces and eventually modify the microstructure of the surfaces with heat treatments thus enabling the freedom on the substrate quality...

Use of different Zn precursors for the deposition of Zn(S,O) buffer layers by chemical bath for chalcopyrite based Cd-free thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Saez-Araoz, R.; Lux-Steiner, M.C. [Hahn Meitner Institut, Berlin (Germany); Freie Universitaet Berlin, Berlin (Germany); Ennaoui, A.; Kropp, T.; Veryaeva, E. [Hahn Meitner Institut, Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co. KG, Munich (Germany)

2008-10-15

Progress in fabricating Cu(In,Ga)(S,Se){sub 2} (CIGSSe) solar cells with Zn(S,O) buffer layers prepared by chemical bath deposition (CBD) is discussed. The effect of different Zn salt precursors on solar cell device performance is investigated using production scale CIGSSe absorbers provided by AVANCIS GmbH and Co. KG. The CBD process has been developed at the Hahn-Meitner-Institut (HMI) using zinc nitrate, zinc sulphate or zinc chloride as zinc precursor. An average efficiency of 14.2{+-}0.8% is obtained by using one-layer CBD Zn(S,O) The dominant recombination path for well performing solar cells is discussed based on the results obtained from temperature dependent J(V) analysis. The structure and morphology of buffer layers deposited using zinc nitrate and zinc sulphate has been studied by means of transmission electron micrographs of glass/Mo/CIGSSe/Zn(S,O) structures. Results show a conformal coverage of the absorber by a Zn(S,O) layer of 15-25 nm consisting of nanocrystals with radii of {proportional_to}5 nm. XAES analysis of the buffer layer reveals a similar surface composition for buffer layers deposited with zinc nitrate and zinc sulphate. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells

Directory of Open Access Journals (Sweden)

A. Le Donne

2015-01-01

Full Text Available Cu2ZnSnS4 (CZTS absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, GaSe2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.

Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

International Nuclear Information System (INIS)

Ruterana, P.; Abouzaid, M.; Gloux, F.; Maciej, W.; Doualan, J.L.; Drago, M.; Schmidtling, T.; Pohl, U.W.; Richter, W.

2006-01-01

In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the material has the InN lattice parameters and that no metallic In precipitates are present, meaning that the PL emission below 0.8 eV is a genuine property of the InN semiconductor. It is also shown that the N polar layers, which exhibit a 2D growth, have poorer PL emission than In polar layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comparison of different photoresist buffer layers in SPR sensors based on D-shaped POF and gold film

Science.gov (United States)

Cennamo, Nunzio; Pesavento, Maria; De Maria, Letizia; Galatus, Ramona; Mattiello, Francesco; Zeni, Luigi

2017-04-01

A comparative analysis of two optical fiber sensing platforms is presented. The sensors are based on surface plasmon resonance (SPR) in a D-shaped plastic optical fiber (POF) with a photoresist buffer layer between the exposed POF core and the thin gold film. We show how the sensor's performances change when the photoresist layer changes. The photoresist layers proposed in this analysis are SU-8 3005 and S1813. The experimental results are congruent with the numerical studies and it is instrumental for chemical and bio-chemical applications. Usually, the photoresist layer is required in order to increase the performance of the SPR-POF sensor.

Improved performances of organic light-emitting diodes with mixed layer and metal oxide as anode buffer

Science.gov (United States)

Xue, Qin; Liu, Shouyin; Zhang, Shiming; Chen, Ping; Zhao, Yi; Liu, Shiyong

2013-01-01

We fabricated organic light-emitting devices (OLEDs) employing 2-methyl-9,10-di(2-naphthyl)-anthracene (MADN) as hole-transport material (HTM) instead of commonly used N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB). After inserting a 0.9 nm thick molybdenum oxide (MoOx) layer at the indium tin oxide (ITO)/MADN interface and a 5 nm thick mixed layer at the organic/organic heterojunction interface, the power conversion efficiency of the device can be increased by 4-fold.

Charge recombination reduction in dye-sensitized solar cells by means of an electron beam-deposited TiO2 buffer layer between conductive glass and photoelectrode

International Nuclear Information System (INIS)

Manca, Michele; Malara, Francesco; Martiradonna, Luigi; De Marco, Luisa; Giannuzzi, Roberto; Cingolani, Roberto; Gigli, Giuseppe

2010-01-01

A thin anatase titanium dioxide compact film was deposited by electron beam evaporation as buffer layer between the conductive transparent electrode and the porous TiO 2 -based photoelectrode in dye-sensitized solar cells. The effect of such a buffer layer on the back transfer reaction of electrons to tri-iodide ions in liquid electrolyte-based cells has been studied by means of both electrochemical impedance spectroscopy and open circuit photovoltage decay analysis. The influence of the thickness has been also investigated and an increment in overall quantum conversion efficiency η as high as + 31% with respect to the standard cell - fabricated onto an uncoated conductive glass - has been revealed in the case of a 120 nm thick buffer layer.

Stable Inverted Low-Bandgap Polymer Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Buffer Layers

Directory of Open Access Journals (Sweden)

Chunfu Zhang

2016-01-01

Full Text Available Efficient inverted low-bandgap polymer solar cells with an aqueous solution processed low-temperature ZnO buffer layer have been investigated. The low-bandgap material PTB-7 is employed so that more solar light can be efficiently harvested, and the aqueous solution processed ZnO electron transport buffer layer is prepared at 150°C so that it can be compatible with the roll-to-roll process. Power conversion efficiency (PCE of the inverted device reaches 7.12%, which is near the control conventional device. More importantly, the inverted device shows a better stability, keeping more than 90% of its original PCE after being stored for 625 hours, while PCE of the conventional device is only 75% of what it was. In addition, it is found that the ZnO thin film annealed in N2 can obviously increase PCE of the inverted device further to 7.26%.

Characteristic of Ti-based PbO{sub 2} anodes with SnO{sub 2}+Sb{sub 2}O{sub 3} intermediate layers

Energy Technology Data Exchange (ETDEWEB)

Wang, Y.; Tong, H.; Xu, W. [Yangzhou Univ., College of Chemistry and Chemical Engineering, Yangzhou (China)

2006-07-01

Ceramic coatings are used in many electrochemical applications, such as organic synthetic applications, wastewater treatment and oxygen production. These processes typically occur in aqueous sulphuric acid. Desirable features for electrode materials include electro-catalytic activity, high stability, low cost, good overall performance under mild conditions and commercial availability. Lead dioxide exhibits excellent chemical stability, high conductivity, high overpotential for oxygen evolution and lower cost in an acid medium. Studies have shown that the stability of active coating prepared by depositing lead dioxide on titanium substrate is poor. In order to solve this problems, methods of doping expensive noble metals or adding an intermediate layer have been examined. Electrode coatings are very sensitive to preparation procedures, in which precursors play an important role in the surface morphology, microstructure, final composition and stability of anodes. However, appreciable inorganic salt loss has been reported using traditional precursors. A polymeric precursor (PP) method commonly used in the preparation of nano-particles has certain advantages, such as easy manipulation and insensitivity to the presence of water. This study characterized the surface morphology and electrochemical behaviour of titanium (Ti)/tin oxide (SnO{sub 2}) plus antimony oxide ((Sb{sub 2}O{sub 3})/lead dioxide (PbO{sub 2}) anode with SnO{sub 2} plus Sb{sub 2}O{sub 3} intermediate coatings. The electrochemical performance of Ti/SnO{sub 2}+Sb{sub 2}O{sub 3}/PbO{sub 2} anode preparing intermediate layer by the PP method was compared with alcohol precursors. It was concluded that adding SnO{sub 2}+Sb2O{sub 3} intermediate layer to Ti/PbO{sub 2} anodes could enhance the lifetime and stability of the anodes, thus its performance. 10 refs., 2 tabs.

Engineering of highly ordered TiO2 nanopore arrays by anodization

Science.gov (United States)

Wang, Huijie; Huang, Zhennan; Zhang, Li; Ding, Jie; Ma, Zhaoxia; Liu, Yong; Kou, Shengzhong; Yang, Hangsheng

2016-07-01

Finite element analysis was used to simulate the current density distributions in the TiO2 barrier layer formed at the initial stage of Ti anodization. The morphology modification of the barrier layer was found to induce current density distribution change. By starting the anodization with proper TiO2 barrier layer morphology, the current density distribution can be adjusted to favor the formation of either nanotube arrays or nanopore arrays of anodic TiO2. We also found that the addition of sodium acetate into the electrolyte suppressed both the field-assisted chemical dissolution of TiO2 and the TiF62- hydrolysis induced TiO2 deposition during anodization, and thus further favored the nanopore formation. Accordingly, highly ordered anodic TiO2 nanopore arrays, similar to anodic aluminum oxide nanopore arrays, were successfully prepared.

LaNiO3 buffer layers for high critical current density YBa2Cu3O7-δ and Tl2Ba2CaCu2O8-δ films

International Nuclear Information System (INIS)

Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

1999-01-01

We demonstrate high critical current density superconducting films of YBa 2 Cu 3 O 7-δ (YBCO) and Tl 2 Ba 2 CaCu 2 O 8-δ (Tl-2212) using LaNiO 3 (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J c (5 K, H=0) than films grown directly on a bare LaAlO 3 substrate. YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J c at all temperatures and fields compared to those grown on bare LaAlO 3 , correlating to both a-axis grain and nonsuperconducting phase formation. LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films in coated conductor applications. copyright 1999 American Institute of Physics

LaNiO3 Buffer Layers for High Critical Current Density YBa2Cu3O7δ and Tl2Ba2CaCu2O8δ Films

International Nuclear Information System (INIS)

Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.-T.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

1999-01-01

We demonstrate high critical current density superconducting films of YBa 2 Cu 3 O 7-δ (YBCO) and Tl 2 Ba 2 CaCu 2 O 8-δ (Tl-2212) using LaNiO 3 (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J c (5K, H=0) than films grown directly on a bare LaAlO 3 substrate. It is noteworthy that YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J c at all temperatures and fields compared to those grown on bare LaAlO 3 , correlating to both a-axis grain and nonsuperconducting phase formation. With additional optimization, LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films, perhaps ideally suited for coated conductor applications

Fabrication of the cube textured NiO buffer layer by line-focused infrared heating for coated conductor application

International Nuclear Information System (INIS)

Chung, Jun-Ki; Kim, Won-Jeong; Tak, Jinsung; Kim, Cheol Jin

2007-01-01

Epitaxial growth of NiO on the bi-axially textured Ni-3 at.%W (Ni-3W) substrate as seed layer for coated conductor were studied. The bi-axially textured NiO was formed on the Ni-3W tapes using a line-focused infrared heater by oxidizing the surface of the substrate at 800-950 deg. C for 15-120 s in oxygen atmosphere. The thickness of the NiO layer could be controlled by changing heat-treatment, which was estimated as approximately 200-500 nm in the cross-sectional SEM micrographs of the NiO/Ni template. This thickness is enough to block the diffusion of the Ni in the substrate to the superconducting layer. The samples showed strong texture development of NiO layer. The sample oxidized at 900 deg. C with the tape transferring speed of 30 mm/h exhibited ω-scan full width at half maximum (FWHM) values for Ni-3W(2 0 0) and NiO(2 0 0) were 3.97 deg., and 3.67 deg., and φ-scan FWHM values for Ni-3W(1 1 1) and NiO(1 1 1) were 9.58 deg., and 8.79 deg., respectively. Also, the (1 1 1) pole-figure of the NiO buffer layer showed the good symmetry of the four peaks, securing the epitaxial growth of the buffer layers on the NiO layer. Also NiO layer exhibited root-mean-square roughness value of 39 nm by AFM (10 x 10 μm) investigation

Photovoltaic Properties in Interpenetrating Heterojunction Organic Solar Cells Utilizing MoO3 and ZnO Charge Transport Buffer Layers

Science.gov (United States)

Hori, Tetsuro; Moritou, Hiroki; Fukuoka, Naoki; Sakamoto, Junki; Fujii, Akihiko; Ozaki, Masanori

2010-01-01

Organic thin-film solar cells with a conducting polymer (CP)/fullerene (C60) interpenetrating heterojunction structure, fabricated by spin-coating a CP onto a C60 deposit thin film, have been investigated and demonstrated to have high efficiency. The photovoltaic properties of solar cells with a structure of indium-tin-oxide/C60/poly(3-hexylthiophene) (PAT6)/Au have been improved by the insertion of molybdenum trioxide (VI) (MoO3) and zinc oxide charge transport buffer layers. The enhanced photovoltaic properties have been discussed, taking into consideration the ground-state charge transfer between PAT6 and MoO3 by measurement of the differential absorption spectra and the suppressed contact resistance at the interface between the organic and buffer layers. PMID:28883360

Photovoltaic Properties in Interpenetrating Heterojunction Organic Solar Cells Utilizing MoO3 and ZnO Charge Transport Buffer Layers

Directory of Open Access Journals (Sweden)

Tetsuro Hori

2010-11-01

Full Text Available Organic thin-film solar cells with a conducting polymer (CP/fullerene (C60 interpenetrating heterojunction structure, fabricated by spin-coating a CP onto a C60 deposit thin film, have been investigated and demonstrated to have high efficiency. The photovoltaic properties of solar cells with a structure of indium-tin-oxide/C60/ poly(3-hexylthiophene (PAT6/Au have been improved by the insertion of molybdenum trioxide (VI (MoO3 and zinc oxide charge transport buffer layers. The enhanced photovoltaic properties have been discussed, taking into consideration the ground-state charge transfer between PAT6 and MoO3 by measurement of the differential absorption spectra and the suppressed contact resistance at the interface between the organic and buffer layers.

Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

Science.gov (United States)

Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

2017-07-01

The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

Effects of TiO{sub 2} buffer layer on the photoelectrochemical properties of TiO{sub 2} Nano rods grown by modified chemical bath deposition method

Energy Technology Data Exchange (ETDEWEB)

Lee, Tae-hyun; Ha, Jin-wook; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

2015-08-15

In this study, we grew TiO{sub 2} nano rods on TiO{sub 2}-film buffered FTO substrate using modified chemical bath deposition (M-CBD). The TiO{sub 2} buffer layer was grown by spin coating method with different RPM (revolutions per minute) values and deposition cycles. We investigated the effects of the RPM values and the deposition cycles on the morphological, structural and photoelectrochemical properties of TiO{sub 2} nano rods. In this work, we have also found that the morphological and structural properties of TiO{sub 2} nano rods affected the photoelectrochemical properties of TiO{sub 2} nano rods. And the maximum photocurrent density of 0.34 mA/cm{sup 2} at 0.6V (vs.SCE) was obtained from the buffer layer deposition process condition of 4,000 RPM and two-times buffer layer depositions.

Chemical bath deposition of thin semiconductor films for use as buffer layers in CuInS2 thin film solar cells

International Nuclear Information System (INIS)

Kaufmann, C.A.

2002-01-01

A CulnS 2 thin film solar cell is a multilayered semiconductor device. The solar cells discussed have a layer sequence Mo/CulnS 2 /buffer/i-ZnO/ZnO:Ga, where a heterojunction establishes between the p-type absorber and the n-type front contact. Conventionally the buffer consists of CdS, deposited by chemical bath deposition (CBD). Apart from providing process oriented benefits the buffer layer functions as a tool for engineering the energy band line-up at the heterojunction interface. Motivated through environmental concern and EU legislation it is felt necessary to substitute this potentially toxic layer by an alternative, Cd-free component. This thesis investigates the suitability of various Zn- and In-compounds, in particular In(OH,O) x S y , as alternative buffer layer materials using CBD. Initial experiments were carried out depositing Zn-based compounds from aqueous solutions. Characterization of the layers, the solution and the processed solar cells was performed. This thesis focuses on the investigation of the CBD process chemistry for the deposition of In-compound thin films. A careful study of the morphology and composition of the deposited thin films was conducted using electron microscopy (SEM, HREM), elastic recoil detection analysis, X-ray photoelectron spectroscopy and optical transmission spectroscopy. This allowed conclusions concerning the nucleation and film growth mechanism from the chemical bath. Connections between bath chemistry, different growth phases, layer morphology and solar cell performance were sought and an improved deposition process was developed. As a result, Cd-free CulnS 2 thin film solar cells with efficiencies of up to 10.6%) (total area) could be produced. Overall the substitution of CdS is shown to be possible by different alternative compounds, such as Zn(OH,O) x S y or In(OH,O) x S y . In the case of In(OH,O) x S y , an understanding of the CBD process and the effect of different growth phases on the resulting solar cell

Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

OpenAIRE

Wang Lan; Lin Xianzhong; Ennaoui Ahmed; Wolf Christian; Lux-Steiner Martha Ch.; Klenk Reiner

2016-01-01

We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating ...

LaNiO(3) Buffer Layers for High Critical Current Density YBa(2)Cu(3)O(7-delta) and Tl(2)Ba(2)CaCu(2)O(8-delta) Films

Energy Technology Data Exchange (ETDEWEB)

Carlson, C.M.; Parilla, P.A.; Siegal, M.P.; Ginley, D.S.; Wang, Y.-T.; Blaugher, R.D.; Price, J.C.; Overmyer, D.L.; Venturini, E.L.

1999-08-24

We demonstrate high critical current density superconducting films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (YBCO) and Tl{sub 2}Ba{sub 2}CaCu{sub 2}O{sub 8{minus}{delta}} (Tl-2212) using LaNiO{sub 3} (LNO) buffer layers. YBCO films grown on an LNO buffer layer have only a slightly lower J{sub c} (5K, H=0) than films grown directly on a bare LaAlO{sub 3} substrate. It is noteworthy that YBCO films grown on LNO buffer layers exhibit minor microstructural disorder and enhanced flux pinning. LNO-buffered Tl-2212 samples show large reductions in J{sub c} at all temperatures and fields compared to those grown on bare LaAlO{sub 3}, correlating to both a-axis grain and nonsuperconducting phase formation. With additional optimization, LNO could be a promising buffer layer for both YBCO and Tl-based superconducting films, perhaps ideally suited for coated conductor applications.

Porous and mesh alumina formed by anodization of high purity aluminum films at low anodizing voltage

International Nuclear Information System (INIS)

Abd-Elnaiem, Alaa M.; Mebed, A.M.; El-Said, Waleed Ahmed; Abdel-Rahim, M.A.

2014-01-01

Electrochemical oxidation of high-purity aluminum (Al) films under low anodizing voltages (1–10) V has been conducted to obtain anodic aluminum oxide (AAO) with ultra-small pore size and inter-pore distance. Different structures of AAO have been obtained e.g. nanoporous and mesh structures. Highly regular pore arrays with small pore size and inter-pore distance have been formed in oxalic or sulfuric acids at different temperatures (22–50 °C). It is found that the pore diameter, inter-pore distance and the barrier layer thickness are independent of the anodizing parameters, which is very different from the rules of general AAO fabrication. The brand formation mechanism has been revealed by the scanning electron microscope study. Regular nanopores are formed under 10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultra-small nanopores. Anodization that is performed at voltages less than 5 V leads to mesh structured alumina. In addition, we have introduced a simple one-pot synthesis method to develop thin walls of oxide containing lithium (Li) ions that could be used for battery application based on anodization of Al films in a supersaturated mixture of lithium phosphate and phosphoric acid as matrix for Li-composite electrolyte. - Highlights: • We develop anodic aluminum oxide (AAO) with small pore size and inter-pore distance. • Applying low anodizing voltages onto aluminum film leads to form mesh structures. • The value of anodizing voltage (1–10 V) has no effect on pore size or inter-pore distance. • Applying anodizing voltage less than 5 V leads to mesh structured AAO. • AAO can be used as a matrix for Li-composite electrolytes

Porous and mesh alumina formed by anodization of high purity aluminum films at low anodizing voltage

Energy Technology Data Exchange (ETDEWEB)

Abd-Elnaiem, Alaa M., E-mail: alaa.abd-elnaiem@science.au.edu.eg [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Mebed, A.M. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Department of Physics, Faculty of Science, Al-Jouf University, Sakaka 2014 (Saudi Arabia); El-Said, Waleed Ahmed [Department of Chemistry, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Abdel-Rahim, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

2014-11-03

Electrochemical oxidation of high-purity aluminum (Al) films under low anodizing voltages (1–10) V has been conducted to obtain anodic aluminum oxide (AAO) with ultra-small pore size and inter-pore distance. Different structures of AAO have been obtained e.g. nanoporous and mesh structures. Highly regular pore arrays with small pore size and inter-pore distance have been formed in oxalic or sulfuric acids at different temperatures (22–50 °C). It is found that the pore diameter, inter-pore distance and the barrier layer thickness are independent of the anodizing parameters, which is very different from the rules of general AAO fabrication. The brand formation mechanism has been revealed by the scanning electron microscope study. Regular nanopores are formed under 10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultra-small nanopores. Anodization that is performed at voltages less than 5 V leads to mesh structured alumina. In addition, we have introduced a simple one-pot synthesis method to develop thin walls of oxide containing lithium (Li) ions that could be used for battery application based on anodization of Al films in a supersaturated mixture of lithium phosphate and phosphoric acid as matrix for Li-composite electrolyte. - Highlights: • We develop anodic aluminum oxide (AAO) with small pore size and inter-pore distance. • Applying low anodizing voltages onto aluminum film leads to form mesh structures. • The value of anodizing voltage (1–10 V) has no effect on pore size or inter-pore distance. • Applying anodizing voltage less than 5 V leads to mesh structured AAO. • AAO can be used as a matrix for Li-composite electrolytes.

Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Wu, Jia-Ling; Lin, Han-Yu; Su, Bo-Yuan; Chen, Yu-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liu, Ssu-Yin [Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Chang, Chia-Chiang; Wu, Chin-Jyi [Industrial Technology Research Institute, Mechanical and Systems Research Laboratories, Hsinchu 310, Taiwan (China)

2014-04-01

Highlights: • The electrodes of bi-layer GZO/ ZnO and single-layer GZO in α-IGZO TFT were compared. • The TFT performances of two different structures were systematically investigated. • The bi-layer GZO/100-nm ZnO S/D electrodes showed the better TFT device properties. - Abstract: In this research, top-gate bottom-contact thin-film transistors (TFTs) made with amorphous indium gallium zinc oxide (α-IGZO) active layers were grown using the radio-frequency sputtering technique. Two kinds of source and drain (S/D) electrodes, namely bi-layer GZO/100-nm ZnO buffer layer/Corning 1737 and single-layer GZO/Corning 1737, used in the TFT devices and the electric characteristics of the devices were compared. To explain the differences in the TFT performances with these different S/D electrodes, X-ray reflectivity (XRR) and contact angles were measured. The α-IGZO TFT with the bi-layer GZO/100-nm ZnO buffer layer structure as S/D electrodes exhibited superior device performance compared to that of the TFT with a single-layer GZO structure, with a higher thin film density (5.94 g/cm{sup 3}), lower surface roughness (0.817 nm), and larger surface energy (62.07 mJ/m{sup 2}) and better adhesion properties of neighboring α-IGZO films. In addition, the mechanisms responsible for the GZO/100-nm ZnO buffer layer/Corning 1737 structure S/D electrodes improving the device characteristics were systematically investigated. The α-IGZO TFT saturation mobility, subthreshold voltage, on/off current ratio, and the trap density of the GZO/100-nm ZnO buffer layer/Corning 1737 S/D electrodes were 13.5 cm{sup 2} V{sup −1} S{sup −1}, 0.43 V/decade, 3.56 × 10{sup 7}, and 5.65 × 10{sup 12} eV{sup −1} cm{sup −2}, respectively, indicating the potential of this bi-layer structure to be applied to large-area flat-panel displays.

Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

International Nuclear Information System (INIS)

Wu, Jia-Ling; Lin, Han-Yu; Su, Bo-Yuan; Chen, Yu-Cheng; Chu, Sheng-Yuan; Liu, Ssu-Yin; Chang, Chia-Chiang; Wu, Chin-Jyi

2014-01-01

Highlights: • The electrodes of bi-layer GZO/ ZnO and single-layer GZO in α-IGZO TFT were compared. • The TFT performances of two different structures were systematically investigated. • The bi-layer GZO/100-nm ZnO S/D electrodes showed the better TFT device properties. - Abstract: In this research, top-gate bottom-contact thin-film transistors (TFTs) made with amorphous indium gallium zinc oxide (α-IGZO) active layers were grown using the radio-frequency sputtering technique. Two kinds of source and drain (S/D) electrodes, namely bi-layer GZO/100-nm ZnO buffer layer/Corning 1737 and single-layer GZO/Corning 1737, used in the TFT devices and the electric characteristics of the devices were compared. To explain the differences in the TFT performances with these different S/D electrodes, X-ray reflectivity (XRR) and contact angles were measured. The α-IGZO TFT with the bi-layer GZO/100-nm ZnO buffer layer structure as S/D electrodes exhibited superior device performance compared to that of the TFT with a single-layer GZO structure, with a higher thin film density (5.94 g/cm 3 ), lower surface roughness (0.817 nm), and larger surface energy (62.07 mJ/m 2 ) and better adhesion properties of neighboring α-IGZO films. In addition, the mechanisms responsible for the GZO/100-nm ZnO buffer layer/Corning 1737 structure S/D electrodes improving the device characteristics were systematically investigated. The α-IGZO TFT saturation mobility, subthreshold voltage, on/off current ratio, and the trap density of the GZO/100-nm ZnO buffer layer/Corning 1737 S/D electrodes were 13.5 cm 2 V −1 S −1 , 0.43 V/decade, 3.56 × 10 7 , and 5.65 × 10 12 eV −1 cm −2 , respectively, indicating the potential of this bi-layer structure to be applied to large-area flat-panel displays

Deuterium markers in CdS and Zn(O,S) buffer layers deposited by solution growth for Cu(In,Ga)Se{sub 2} thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Witte, Wolfram; Eicke, Axel; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany); Souza, Roger A. de; Martin, Manfred [Institute of Physical Chemistry, RWTH Aachen University (Germany)

2017-12-15

This contribution describes an easy and cheap approach to introduce deuterium (D) as an isotopic marker into the commonly used buffer layer materials CdS and Zn(O,S) for Cu(In,Ga)Se{sub 2} (CIGS) thin-film solar cells. D was successfully incorporated during the growth of Zn(O,S) and CdS buffer layers by chemical bath deposition (CBD) with D{sub 2}O. CIGS solar cells prepared with D-containing buffers grown by CBD exhibit power conversion efficiencies above 16%, that is, the D content has no detrimental effect on the performance or other solar cell parameters of the devices. With depth profiles obtained by time-of-flight secondary ion mass spectrometry (ToF-SIMS) we clearly detect the intentionally incorporated D within the solution-grown Zn(O,S) buffer. Assuming that D is present as OD, we compare the amount of OD within the Zn(O,S) layer with the amount of OH on the surface of the subsequent sputtered (Zn,Mg)O layer. Possible applications and future experiments of the method inserting isotopic markers such as D in functional layers of chalcopyrite-type thin-film solar cells and beyond are discussed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

Science.gov (United States)

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-09-02

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

Fabrication of a Ni nano-imprint stamp for an anti-reflective layer using an anodic aluminum oxide template.

Science.gov (United States)

Park, Eun-Mi; Lim, Seung-Kyu; Ra, Senug-Hyun; Suh, Su-Jung

2013-11-01

Aluminum anodizing can alter pore diameter, density distribution, periodicity and layer thickness in a controlled way. Because of this property, porous type anodic aluminum oxide (AAO) was used as a template for nano-structure fabrication. The alumina layer generated at a constant voltage increased the pore size from 120 nm to 205 nm according to an increasing process time from 60 min to 150 min. The resulting fabricated AAO templates had pore diameters at or less than 200 nm. Ni was sputtered as a conductive layer onto this AAO template and electroplated using DC and pulse power. Comparing these Ni stamps, those generated from electroplating using on/reverse/off pulsing had an ordered pillar array and maintained the AAO template morphology. This stamp was used for nano-imprinting on UV curable resin coated glass wafer. Surface observations via electron microscopy showed that the nano-imprinted patterned had the same shape as the AAO template. A soft mold was subsequently fabricated and nano-imprinted to form a moth-eye structure on the glass wafer. An analysis of the substrate transmittance using UV-VIS/NIR spectroscopy showed that the transmittance of the substrate with the moth-eye structure was 5% greater that the non-patterned substrate.

Growth of thick La{sub 2}Zr{sub 2}O{sub 7} buffer layers for coated conductors by polymer-assisted chemical solution deposition

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xin, E-mail: xzhang@my.swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Xia, Yudong [State Key Lab of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Guo, Chunsheng [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Zhang, Yong [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy Center (SNEC), Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, Han [Department of Physics, Peking University, Beijing 100871 (China)

2015-06-15

Highlights: • We develops a low-cost and high-efficient technology of fabricating LZO buffer layers. • Sufficient thickness LZO buffer layers have been obtained on NiW (2 0 0) alloy substrate. • Highly biaxially textured YBCO thin film has been deposited on LZO/NiW. - Abstract: La{sub 2}Zr{sub 2}O{sub 7} (LZO) epitaxial films have been deposited on LaAlO{sub 3} (LAO) (1 0 0) single-crystal surface and bi-axially textured NiW (2 0 0) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (1 0 0) single-crystal surface; The films deposited on NiW (2 0 0) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa{sub 2}Cu{sub 3}O{sub 7−x} (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm{sup 2} at 77 K .These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors.

Buffer-regulated biocorrosion of pure magnesium.

Science.gov (United States)

Kirkland, Nicholas T; Waterman, Jay; Birbilis, Nick; Dias, George; Woodfield, Tim B F; Hartshorn, Richard M; Staiger, Mark P

2012-02-01

Magnesium (Mg) alloys are being actively investigated as potential load-bearing orthopaedic implant materials due to their biodegradability in vivo. With Mg biomaterials at an early stage in their development, the screening of alloy compositions for their biodegradation rate, and hence biocompatibility, is reliant on cost-effective in vitro methods. The use of a buffer to control pH during in vitro biodegradation is recognised as critically important as this seeks to mimic pH control as it occurs naturally in vivo. The two different types of in vitro buffer system available are based on either (i) zwitterionic organic compounds or (ii) carbonate buffers within a partial-CO(2) atmosphere. This study investigated the influence of the buffering system itself on the in vitro corrosion of Mg. It was found that the less realistic zwitterion-based buffer did not form the same corrosion layers as the carbonate buffer, and was potentially affecting the behaviour of the hydrated oxide layer that forms on Mg in all aqueous environments. Consequently it was recommended that Mg in vitro experiments use the more biorealistic carbonate buffering system when possible.

Spray-Pyrolyzed Three-Dimensional CuInS2 Solar Cells on Nanocrystalline-Titania Electrodes with Chemical-Bath-Deposited Inx(OH)ySz Buffer Layers

Science.gov (United States)

Nguyen, Duy-Cuong; Mikami, Yuki; Tsujimoto, Kazuki; Ryo, Toshihiro; Ito, Seigo

2012-10-01

Three-dimensional (3D) compound solar cells with the structure of plates> have been fabricated by spray pyrolysis deposition of CuInS2 and chemical-bath deposition of Inx(OH)ySz for the light absorber and buffer layer, respectively. The effect of deposition and annealing conditions of Inx(OH)ySz on the photovoltaic properties of 3D CuInS2 solar cells was investigated. Inx(OH)ySz annealed in air ambient showed a better cell performance than those annealed in nitrogen ambient and without annealing. The improvement of the performance of cells with Inx(OH)ySz buffer layers annealed in air ambient is due to the increase in oxide concentration in the buffer layers [confirmed by X-ray photoelectron spectroscopy (XPS) measurement]. Among cells with Inx(OH)ySz buffer layers deposited for 1, 1.5, 1.75, and 2 h, that with Inx(OH)ySz deposited for 1.75 h showed the best cell performance. The best cell performance was observed for Inx(OH)ySz deposited for 1.75 h with annealing at 300 °C for 30 min in air ambient, and cell parameters were 22 mA cm-2 short-circuit photocurrent density, 0.41 V open-circuit voltage, 0.35 fill factor, and 3.2% conversion efficiency.

Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors

Science.gov (United States)

Kamijyo, Masahiro; Onozuka, Tomotake; Yoshida, Naoto; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

2004-09-01

Microcrystalline ZrO2 and HfO2 thin film capacitors were prepared by anodizing sputter-deposited Zr and Hf films. The thermal degradation behavior of both anodized capacitors was clarified by the measurement of their capacitance properties and Auger depth profiles before and after heat treatment in air. As a result, it is confirmed that the heat-resistance property of the HfO2 anodized capacitor is superior to that of the ZrO2 capacitor. In addition, it is revealed that the thermal degradation of the ZrO2 anodized capacitor is caused by the diffusion of Zr atoms from the underlying layer into the ZrO2 anodized layer, while that of the HfO2 anodized capacitor is caused by the diffusion of oxygen atoms from the anodized layer into the underlying Hf layer.

Effect of CrO3 Sealing Time on Anodized A12024-T3

Science.gov (United States)

Korda, Akhmad A.; Hidayat, R. Z.

2016-08-01

The effect of CrO3 sealing time on anodized aluminum alloy has been investigated. A1 2024-T3 were used as substrate. Anodizing was carried out using chromic acid. CrO3 sealing was conducted in CrO3 solution for 30, 60, 90, 120 and 150 minutes. As comparison, other specimens were also prepared as anodized and boiled water sealing. Thickness of the coating was observed by optical microscope. Anodized and sealing layer was analyzed by X- ray diffraction. The hardness of as anodized, boiled water sealing and CrO3 sealing were compared. The highest hardness is achieved by CrO3 sealed specimen and followed by boiled water sealing and as anodized specimens. The longer the processes of CrO3 sealing the higher layer thickness and therefore the higher hardness of the oxide layer. The best resistance to electrolyte penetration is achieved by the CrO3 sealed specimen followed by boiled water sealed and as anodized specimens. The higher thickness of oxide layer, the higher the resistance against electrolyte penetration.

Effect of CrO_3 Sealing Time on Anodized A12024-T3

International Nuclear Information System (INIS)

Korda, Akhmad A; Hidayat, R Z

2016-01-01

The effect of CrO_3 sealing time on anodized aluminum alloy has been investigated. A1 2024-T3 were used as substrate. Anodizing was carried out using chromic acid. CrO_3 sealing was conducted in CrO_3 solution for 30, 60, 90, 120 and 150 minutes. As comparison, other specimens were also prepared as anodized and boiled water sealing. Thickness of the coating was observed by optical microscope. Anodized and sealing layer was analyzed by X- ray diffraction. The hardness of as anodized, boiled water sealing and CrO_3 sealing were compared. The highest hardness is achieved by CrO_3 sealed specimen and followed by boiled water sealing and as anodized specimens. The longer the processes of CrO3 sealing the higher layer thickness and therefore the higher hardness of the oxide layer. The best resistance to electrolyte penetration is achieved by the CrO_3 sealed specimen followed by boiled water sealed and as anodized specimens. The higher thickness of oxide layer, the higher the resistance against electrolyte penetration. (paper)

Geobacter Dominates the Inner Layers of a Stratified Biofilm on a Fluidized Anode During Brewery Wastewater Treatment

Directory of Open Access Journals (Sweden)

Sara Tejedor-Sanz

2018-03-01

Full Text Available In this study, we designed a microbial electrochemical fluidized bed reactor (ME-FBR, with an electroconductive anodic bed made of activated carbon particles for treating a brewery wastewater. Under a batch operating mode, acetate and propionate consumption rates were 13-fold and 2.4-fold higher, respectively, when the fluidized anode was polarized (0.2 V with respect to open circuit conditions. Operating in a continuous mode, this system could effectively treat the brewery effluent at organic loading rates (OLR over 1.7 kg m-3NRV d-1 and with removal efficiencies of 95 ± 1.4% (hydraulic retention time of 1 day and an influent of 1.7 g-COD L-1. The coulombic efficiency values highly depended upon the OLR applied, and varied from a 56 ± 15% to 10 ± 1%. Fluorescence in situ hybridization (FISH analysis revealed a relative high abundance of Geobacter species (ca. 20%, and clearly showed a natural microbial stratification. Interestingly, the Geobacter cluster was highly enriched in the innermost layers of the biofilm (thickness of 10 μm, which were in contact with the electroconductive particles of bed, whereas the rest of bacteria were located in the outermost layers. To our knowledge, this is the first time that such a clear microbial stratification has been observed on an anode-respiring biofilm. Our results revealed the relevant role of Geobacter in switching between the electrode and other microbial communities performing metabolic reactions in the outermost environment of the biofilm.

Influence of laser sputtering parameters on orientation of cerium oxide buffer layer on sapphire and properties of YBa2Cu3Ox superconducting film

International Nuclear Information System (INIS)

Mozhaev, P.B.; Ovsyannikov, G.A.; Skov, J.L.

1999-01-01

Effect of laser sputtering parameters on crystalline properties of CeO 2 buffer layers grown on (1102) orientation sapphire substrate and on properties of YBa 2 Cu 3 O x superconducting thin films was studied. It was shown that depending on the sputtering conditions one might observe growth of CeO 2 (100) and (111) orientations. Varying heater temperature, chamber pressure and density of laser ray energy on the target one managed to obtain mono-oriented buffer layer of the desired orientation [ru

Self-ordering behavior of nanoporous anodic aluminum oxide (AAO) in malonic acid anodization

International Nuclear Information System (INIS)

Lee, W; Nielsch, K; Goesele, U

2007-01-01

The self-ordering behavior of anodic aluminum oxide (AAO) has been investigated for anodization of aluminum in malonic acid (H 4 C 3 O 4 ) solution. In the present study it is found that a porous oxide layer formed on the surface of aluminum can effectively suppress catastrophic local events (such as breakdown of the oxide film and plastic deformation of the aluminum substrate), and enables stable fast anodic oxidation under a high electric field of 110-140 V and ∼100 mA cm -2 . Studies on the self-ordering behavior of AAO indicated that the cell homogeneity of AAO increases dramatically as the anodization voltage gets higher than 120 V. Highly ordered AAO with a hexagonal arrangement of the nanopores could be obtained in a voltage range 125-140 V. The current density (i.e., the electric field strength (E) at the bottom of a pore) is an important parameter governing the self-ordering of the nanopores as well as the interpore distance (D int ) for a given anodization potential (U) during malonic acid anodization

Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Storm, D.F.; Katzer, D.S.; Binari, S.C.; Shanabrook, B.V.; Zhou Lin; Smith, David J.

2004-01-01

AlGaN/GaN high electron mobility transistor structures have been grown by plasma-assisted molecular beam epitaxy on semi-insulating 4H-SiC utilizing an AlN nucleation layer. The electron Hall mobility of these structures increases from 1050 cm 2 /V s to greater than 1450 cm 2 /V s when the Al/N flux ratio during the growth of the nucleation layer is increased from 0.90 to 1.07. Buffer leakage currents increase abruptly by nearly three orders of magnitude when the Al/N ratio increases from below to above unity. Transmission electron microscopy indicates that high buffer leakage is correlated with the presence of stacking faults in the nucleation layer and cubic phase GaN in the buffer, while low mobilities are correlated with high dislocation densities

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

Science.gov (United States)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

Structural comparison of anodic nanoporous-titania fabricated from single-step and three-step of anodization using two paralleled-electrodes anodizing cell

Directory of Open Access Journals (Sweden)

Mallika Thabuot

2016-02-01

Full Text Available Anodization of Ti sheet in the ethylene glycol electrolyte containing 0.38wt% NH4F with the addition of 1.79wt% H2O at room temperature was studied. Applied potential of 10-60 V and anodizing time of 1-3 h were conducted by single-step and three-step of anodization within the two paralleled-electrodes anodizing cell. Their structural and textural properties were investigated by X-ray diffraction (XRD and scanning electron microscopy (SEM. After annealing at 600°C in the air furnace for 3 h, TiO2-nanotubes was transformed to the higher proportion of anatase crystal phase. Also crystallization of anatase phase was enhanced as the duration of anodization as the final step increased. By using single-step of anodization, pore texture of oxide film was started to reveal at the applied potential of 30 V. Better orderly arrangement of the TiO2-nanotubes array with larger pore size was obtained with the increase of applied potential. The applied potential of 60 V was selected for the three-step of anodization with anodizing time of 1-3 h. Results showed that the well-smooth surface coverage with higher density of porous-TiO2 was achieved using prolonging time at the first and second step, however, discontinuity tube in length was produced instead of the long-vertical tube. Layer thickness of anodic oxide film depended on the anodizing time at the last step of anodization. More well arrangement of nanostructured-TiO2 was produced using three-step of anodization under 60 V with 3 h for each step.

Influence of the ZnO nanoarchitecture on the electrochemical performances of binder-free anodes for Li storage

Energy Technology Data Exchange (ETDEWEB)

Dall' Asta, V.; Tealdi, C.; Resmini, A.; Anselmi Tamburini, U.; Mustarelli, P., E-mail: piercarlo.mustarelli@unipv.it; Quartarone, E.

2017-03-15

Zinc oxide nanoarchitectures may be employed as binder-free, high specific capacity anodes for lithium batteries. By means of simple and low-impact wet chemistry approaches, we synthesized 1D (nanorods), 2D (single- and multi-layered nanosheets), and 3D (nanobrushes) ZnO arrays. These nanoarchitectures were compared as far as concerns their electrochemical properties and the structural modifications upon lithiation/delithiation. The best results were offered by 2D nanosheets, which showed reversible capacity of the order of 400 mAhg{sup −1} after 100 cycles at 1 Ag{sup −1}. This was due to: i) small nanoparticles, with average diameter of about 10 nm, which maximize the array specific surface area and favor the formation of the LiZn alloy; ii) the presence of a mesoporous texture, which allows larger space for accommodating the volume changes upon lithiation/delithiation. However, also these 2D structures showed large irreversible capacity losses. Our work highlights the need for more efficient buffering solutions in ZnO binder-free nanostructured anodes. - Graphical abstract: ZnO nanosheets as anode materials for lithium batteries.

The growth of various buffer layer structures and their influence on the quality of (CdHg)Te epilayers

CSIR Research Space (South Africa)

Gouws, GJ

1993-05-01

Full Text Available The suitability of various buffer layer structures on (100) GaAs for (CdHg)Te growth by organometallic vapour phase epitaxy (OMVPE) was investigated. The preferred epitaxial orientation of (100) GaAs/ (lll) CdTe was found to be unsuitable due...

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

International Nuclear Information System (INIS)

Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

2014-01-01

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Evaluation of the corrosion resistance of anodized aluminum 6061 using electrochemical impedance spectroscopy (EIS)

International Nuclear Information System (INIS)

Huang Yuelong; Shih Hong; Huang, Huochuan; Daugherty, John; Wu Shun; Ramanathan, Sivakami; Chang, Chris; Mansfeld, Florian

2008-01-01

The corrosion resistance of anodized Al 6061 produced by two different anodizing and sealing processes was evaluated using electrochemical impedance spectroscopy (EIS). The scanning electron microscope (SEM) was employed to determine the surface structure and the thickness of the anodized layers. The EIS data revealed that there was very little change of the properties of the anodized layers for samples that were hard anodized in a mixed acid solution and sealed in hot water over a 365 day exposure period in a 3.5 wt% NaCl solution. The specific admittance A s and the breakpoint frequency f b remained constant with exposure time confirming that the hard anodizing process used in this study was very effective in providing excellent corrosion resistance of anodized Al 6061 over extended exposure periods. Some minor degradation of the protective properties of the anodized layers was observed for samples that were hard anodized in H 2 SO 4 and exposed to the NaCl solution for 14 days

Compact hematite buffer layer as a promoter of nanorod photoanode performances

Science.gov (United States)

Milan, R.; Cattarin, S.; Comisso, N.; Baratto, C.; Kaunisto, K.; Tkachenko, N. V.; Concina, I.

2016-10-01

The effect of a thin α-Fe2O3 compact buffer layer (BL) on the photoelectrochemical performances of a bare α-Fe2O3 nanorods photoanode is investigated. The BL is prepared through a simple spray deposition onto a fluorine-doped tin oxide (FTO) conducting glass substrate before the growth of a α-Fe2O3 nanorods via a hydrothermal process. Insertion of the hematite BL between the FTO and the nanorods markedly enhances the generated photocurrent, by limiting undesired losses of photogenerated charges at the FTO||electrolyte interface. The proposed approach warrants a marked improvement of material performances, with no additional thermal treatment and no use/dispersion of rare or toxic species, in agreement with the principles of green chemistry.

Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes

Science.gov (United States)

Hourdakis, Emmanouel; Nassiopoulou, Androula G.

2017-07-01

Metal-Insulator-Metal (MIM) capacitors with a high capacitance density and low non-linearity coefficient using a single-layer dielectric of barrier-type anodic alumina (Al2O3) and an imprinted bottom Al electrode are presented. Imprinting of the bottom electrode aimed at increasing the capacitor effective surface area by creating a three-dimensional MIM capacitor architecture. The bottom Al electrode was only partly nanopatterned so as to ensure low series resistance of the MIM capacitor. With a 3 nm thick anodic Al2O3 dielectric, the capacitor with the imprinted electrode showed a 280% increase in capacitance density compared to the flat electrode capacitor, reaching a value of 20.5 fF/μm2. On the other hand, with a 30 nm thick anodic Al2O3 layer, the capacitance density was 7.9 fF/μm2 and the non-linearity coefficient was as low as 196 ppm/V2. These values are very close to reaching all requirements of the last International Technology Roadmap for Semiconductors for MIM capacitors [ITRS, http://www.itrs2.net/2013-itrs.html for ITRS Roadmap (2013)], and they are achieved by a single-layer dielectric instead of the complicated dielectric stacks of the literature. The obtained results constitute a real progress compared to previously reported results by our group for MIM capacitors using imprinted electrodes.

Development of redox stable, multifunctional substrates for anode supported SOFCS

DEFF Research Database (Denmark)

Sudireddy, Bhaskar Reddy; Foghmoes, Søren Preben Vagn; Ramos, Tania

2017-01-01

Redox stable solid oxide fuel cells are beneficial in many aspects such as tolerance against system failures e.g fuel cut off and emergency shut down, but also allow for higher fuel utilization, which increases efficiency. State-ofthe-art Ni-cermet based anodes suffer from microstructural changes...... with a multifunctional anode support, the development of a two layer fuel electrode based on a redox stable strontium titanate layer for the electrochemically active layer and a redox stable Ni-YSZ support was pursued. Half-cells with well adhearing strontium titante anode layers on stateof-the-art Ni-YSZ cermet...... supports have been achieved. Redox tolerance of the half-cell depends could be increased by optimizing the redox stability of the cermet support....

Anode Fall Formation in a Hall Thruster

International Nuclear Information System (INIS)

Dorf, Leonid A.; Raitses, Yevgeny F.; Smirnov, Artem N.; Fisch, Nathaniel J.

2004-01-01

As was reported in our previous work, accurate, nondisturbing near-anode measurements of the plasma density, electron temperature, and plasma potential performed with biased and emissive probes allowed the first experimental identification of both electron-repelling (negative anode fall) and electron-attracting (positive anode fall) anode sheaths in Hall thrusters. An interesting new phenomenon revealed by the probe measurements is that the anode fall changes from positive to negative upon removal of the dielectric coating, which appears on the anode surface during the course of Hall thruster operation. As reported in the present work, energy dispersion spectroscopy analysis of the chemical composition of the anode dielectric coating indicates that the coating layer consists essentially of an oxide of the anode material (stainless steel). However, it is still unclear how oxygen gets into the thruster channel. Most importantly, possible mechanisms of anode fall formation in a Hall thruster with a clean and a coated anodes are analyzed in this work; practical implication of understanding the general structure of the electron-attracting anode sheath in the case of a coated anode is also discussed

Scaling up aqueous processing of A-site deficient strontium titanate for SOFC anode supports

DEFF Research Database (Denmark)

Verbraeken, Maarten C.; Sudireddy, Bhaskar Reddy; Vasechko, Viacheslav

2018-01-01

All ceramic anode supported half cells of technically relevant scale were fabricated in this study, using a novel strontium titanate anode material. The use of this material would be highly advantageous in solid oxide fuel cells due to its redox tolerance and resistance to coking and sulphur...... poisoning. Successful fabrication was possible through aqueous tape casting of both anode support and electrolyte layers and subsequent lamination. Screen printing of electrolyte layers onto green anode tapes was also attempted but resulted in cracked electrolyte layers upon firing. Microstructural...

Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

International Nuclear Information System (INIS)

Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

2006-01-01

Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2 O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/□, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10 /R sheet ) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices

Enhancing the platinum atomic layer deposition infiltration depth inside anodic alumina nanoporous membrane

Energy Technology Data Exchange (ETDEWEB)

Vaish, Amit, E-mail: anv@udel.edu; Krueger, Susan; Dimitriou, Michael; Majkrzak, Charles [National Institute of Standards and Technology (NIST) Center for Neutron Research, Gaithersburg, MD 20899-8313 (United States); Vanderah, David J. [Institute for Bioscience and Biotechnology Research, NIST, Rockville, Maryland 20850 (United States); Chen, Lei, E-mail: lei.chen@nist.gov [NIST Center for Nanoscale Science and Technology, Gaithersburg, Maryland 20899-8313 (United States); Gawrisch, Klaus [Laboratory of Membrane Biochemistry and Biophysics, National Institute on Alcohol Abuse and Alcoholism, National Institutes of Health, Bethesda, Maryland 20892 (United States)

2015-01-15

Nanoporous platinum membranes can be straightforwardly fabricated by forming a Pt coating inside the nanopores of anodic alumina membranes (AAO) using atomic layer deposition (ALD). However, the high-aspect-ratio of AAO makes Pt ALD very challenging. By tuning the process deposition temperature and precursor exposure time, enhanced infiltration depth along with conformal coating was achieved for Pt ALD inside the AAO templates. Cross-sectional scanning electron microscopy/energy dispersive x-ray spectroscopy and small angle neutron scattering were employed to analyze the Pt coverage and thickness inside the AAO nanopores. Additionally, one application of platinum-coated membrane was demonstrated by creating a high-density protein-functionalized interface.

PAT and SEM study of porous silicon formed by anodization methods

International Nuclear Information System (INIS)

Liu Jian; Wei Long; Wang Huiyao; Ma Chuangxin; Wang Baoyi

2000-01-01

The porous silicon formed by anodization of crystal silicon was studied by positron annihilation technique (PAT) and scanning electron microscopy (SEM). The PAT experiments showed that the mean life and vacancy defects increased with the increasing anodization time. While the intensities of the longest lifetime, several ns-tens ns (ortho-positronium) dropped down. Small single-crystal Si spheres with mean radius of a few μm were observed by SEM after anodization. Pits with mean radius of a few μm from the divorcement of single-crystal spheres were also observed after further anodization. The increases of vacancy defects might be that the extension of structures of porous silicon towards inner layer with anodization time and caused more vacancy defects in inner layer. The SEM observation presented another possibility of the increase of density of vacancy defects in surface layer induced by the change of structures

Large area flexible polymer solar cells with high efficiency enabled by imprinted Ag grid and modified buffer layer

International Nuclear Information System (INIS)

Lu, Shudi; Lin, Jie; Liu, Kong; Yue, Shizhong; Ren, Kuankuan; Tan, Furui; Wang, Zhijie; Jin, Peng; Qu, Shengchun; Wang, Zhanguo

2017-01-01

To take a full advantage of polymer semiconductors on realization of large-area flexible photovoltaic devices, herein, we fabricate polymer solar cells on the basis of polyethylene terephthalate (PET) with imprinted Ag grid as transparent electrode. The key fabrication procedure is the adoption of a modified PEDOT:PSS (PH1000) solution for spin-coating the buffer layer to form a compact contact with the substrate. In comparison with the devices with intrinsic PEDOT:PSS buffer layer, the advanced devices present a much higher efficiency of 6.51%, even in a large device area of 2.25 cm"2. Subsequent characterizations reveal that such devices show an impressive performance stability as the bending angle is enlarged to 180° and bending time is up to 1000 cycles. Not only providing a general methodology to construct high efficient and flexible polymer solar cells, this paper also involves deep insights on device working mechanism in bending conditions.

High dielectric constant and energy density induced by the tunable TiO2 interfacial buffer layer in PVDF nanocomposite contained with core-shell structured TiO2@BaTiO3 nanoparticles

Science.gov (United States)

Hu, Penghao; Jia, Zhuye; Shen, Zhonghui; Wang, Peng; Liu, Xiaoru

2018-05-01

To realize application in high-capacity capacitors and portable electric devices, large energy density is eagerly desired for polymer-based nanocomposite. The core-shell structured nanofillers with inorganic buffer layer are recently supposed to be promising in improving the dielectric property of polymer nanocomposite. In this work, core-shell structured TO@BT nanoparticles with crystalline TiO2 buffer layer coated on BaTiO3 nanoparticle were fabricated via solution method and heat treatment. The thickness of the TO buffer layer can be tailored by modulating the additive amount of the titanate coupling agent in preparation process, and the apparent dielectric properties of nanocomposite are much related to the thickness of the TO layer. The relatively thin TO layer prefer to generate high polarization to increase dielectric constant while the relatively thick TO layer would rather to homogenize field to maintain breakdown strength. Simulation of electric field distribution in the interfacial region reveals the improving effect of the TO buffer layer on the dielectric properties of nanocomposite which accords with the experimental results well. The optimized nanoparticle TO@BT-2 with a mean thickness of 3-5 nm buffer layer of TO is effective in increasing both the ε and Eb in the PVDF composite film. The maximal discharged energy density of 8.78 J/cm3 with high energy efficiency above 0.6 is obtained in TO@BT-2/PVDF nanocomposite with 2.5 vol% loading close to the breakdown strength of 380 kV/mm. The present study demonstrates the approach to optimize the structure of core-shell nanoparticles by modulating buffer layer and provides a new way to further enlarge energy density in polymer nanocomposite.

Formation of accessory mineral bed layers during erosion of bentonite buffer material

International Nuclear Information System (INIS)

Schatz, Timothy; Kanerva, Noora

2012-01-01

Document available in extended abstract form only. dilute groundwater at a transmissive fracture interface, accessory phases within bentonite, such as quartz, feldspar, etc., might remain behind and form a filter bed or cake. As more and more montmorillonite is lost, the thickness of the accessory mineral bed increases and the continued transport of montmorillonite slows and possibly stops if the porosity of the filter bed is sufficiently compressed. Alternatively or concurrently, as the accessory mineral filter bed retains montmorillonite colloids, a filter cake composed of montmorillonite itself may be formed. Ultimately, depending on their extent, properties, and durability, such processes may provide the bentonite buffer system with an inherent, self-filtration mechanism which serves to limit the effects of colloidal erosion. A conceptual view of bentonite buffer extrusion and erosion in an intersecting fracture with formation of an accessory mineral filter bed and montmorillonite filter cake is presented in Figure 1. Due to the swelling pressure of the bentonite buffer, the situation described in Figure 1 may be analogous to that of the case of pressure filtration where a filter cake is formed by pressing a suspension through a filter medium and, by a mechanism known as expression, the filter cake is compressed by direct contact with a solid surface resulting in a reduction of its porosity. In order to examine whether the erosion of bentonite material through contact with dilute groundwater at a transmissive fracture interface could intrinsically result in 1) the formation of an accessory mineral filter bed and cake and/or 2) filter caking of montmorillonite itself, a series of laboratory tests were performed in a flow-through, horizontal, 1 mm aperture, artificial fracture system. Bentonite buffer material was simulated by using mixtures (75/25 weight percent ratio) of purified sodium montmorillonite and various additives serving as accessory mineral proxies

Hydrogen effects in anodic grinding of WC-Co sintered alloy

International Nuclear Information System (INIS)

Lunarska, E.; Zaborski, St.

2001-01-01

The effects of anodic polarization applied in grinding of sintered WC C o alloy on properties of surface layer, quality of ground surface and efficiency of the treatment were studied. The nonmonotonical change of the surface roughness, the energy consumption and the wear of tool was stated at increasing anodic polarization. The optimum values of above parameters were achieved at application of anodic polarization at which the Co selective dissolution and hydrogen ingress into the ground metal. affecting the internal friction spectra were stated. The assistance of hydrogen induced deterioration and Co selective dissolution in the surface layer in the anodic grinding of WC-Co alloy has been discussed. (author)

Layer-Tunable Phosphorene Modulated by the Cation Insertion Rate as a Sodium-Storage Anode.

Science.gov (United States)

Huang, Zhaodong; Hou, Hongshuai; Zhang, Yan; Wang, Chao; Qiu, Xiaoqing; Ji, Xiaobo

2017-09-01

Liquid phase exfoliation of few-layer phosphorene (FL-P) is extensively explored in recent years. Nevertheless, their deficiencies such as ultralong sonication time, limited flake size distribution, and uncontrollable thicknesses are major hurdles for the development of phosphorene-based materials. Herein, electrochemical cationic intercalation has been introduced to prepare phosphorene, through which large-area FL-P without surface functional groups can be efficiently attained (less than 1 h). More importantly, its layer number (from 2 to 11 layers) can be manipulated by changing the applied potential. The as-obtained phosphorene delivers superior sodium-storage performances when directly utilized as an anode material in sodium-ion batteries. This electrochemical cation insertion method to prepare phosphorene should greatly facilitate the development of phosphorene-based technologies. Moreover, this work provides the possibility for the scalable preparation of monolayer 2D materials by exploring intercalation ions. Additionally, the successful electrochemical exfoliation of phosphorene can promote the application of electrochemical exfoliation in other 2D materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multilayer tape cast SOFC – Effect of anode sintering temperature

DEFF Research Database (Denmark)

Hauch, Anne; Birkl, Christoph; Brodersen, Karen

2012-01-01

Multilayer tape casting (MTC) is considered a promising, cost-efficient, up-scalable shaping process for production of planar anode supported solid oxide fuel cells (SOFC). Multilayer tape casting of the three layers comprising the half cell (anode support/active anode/electrolyte) can potentially...

Influence of HEPES buffer on the local pH and formation of surface layer during in vitro degradation tests of magnesium in DMEM

Directory of Open Access Journals (Sweden)

S. Naddaf Dezfuli

2014-10-01

Full Text Available The human body is a buffered environment where pH is effectively maintained. HEPES is a biological buffer often used to mimic the buffering activity of the body in in vitro studies on the degradation behavior of magnesium. However, the influence of HEPES on the degradation behavior of magnesium in the DMEM pseudo-physiological solution has not yet been determined. The research aimed at elucidating the degradation mechanisms of magnesium in DMEM with and without HEPES. The morphologies and compositions of surface layers formed during in vitro degradation tests for 15–3600 s were characterized. The effect of HEPES on the electrochemical behavior and corrosion tendency was determined by performing electrochemical tests. HEPES indeed retained the local pH, leading to intense intergranular/interparticle corrosion of magnesium made from powder and an increased degradation rate. This was attributed to an interconnected network of cracks formed at the original powder particle boundaries and grain boundaries in the surface layer, which provided pathways for the corrosive medium to interact continuously with the internal surfaces and promoted further dissolution. Surface analysis revealed significantly reduced amounts of precipitated calcium phosphates due to the buffering activity of HEPES so that magnesium became less well protected in the buffered environment.

Surface Modification of Titanium Using Anodization to Enhance Antimicrobial Properties and Osseointegration

Science.gov (United States)

Jain, Sakshi

Titanium and its alloys are frequently used in dental and orthopedic implants because they have good mechanical strength, chemical stability and biocompatibility. These properties can be further improved by surface treatments such as anodization that are able to grow thicker and produce crystalline oxide layers with controlled morphological and physico-chemical properties. Both anatase (A) and rutile (R) crystalline phases of titanium oxide have been shown to promote bioactivity and antimicrobial effects. In a previous study in our laboratories, four electrolyte mixtures were optimized to produce anodized layers on commercially pure titanium consisting of specific anatase and rutile oxide ratios at an endpoint forming voltage of 180 V. In the present study, changes that occurred in the anodized layers with increasing forming voltage including crystallinity, thickness, surface morphology, surface roughness, surface chemistry, fractal dimension, shear strength, and corrosion resistance were determined for each of these electrolytes. The results showed the crystallinity, thickness, surface pore sizes, and surface roughness increased with increasing forming voltage. Incorporation of phosphorus into the anodized layers was shown in phosphoric acid containing electrolytes at higher forming voltages. Decreases in corrosion resistance were also shown at higher forming voltages in each electrolyte due to increased pore interconnectivity within the anodized layers. In addition, the apatite inducing ability of anodized layers in SBF was examined for selected forming voltages in each electrolyte. Anodization in phosphoric acid containing electrolytes was shown to be more favorable for apatite formation. The streptococcal and MRSA bacterial attachment before and after UV treatments was determined for selected forming voltages in each electrolyte. Additionally, the killing efficacy after 10-minute pre-irradiation with UVA or UVC treatments was determined. UVA treatments showed

Electrical Resistance Measurements and Microstructural Characterization of the Anode/Interconnect Contact in Simulated Anode-Side SOFC Conditions

DEFF Research Database (Denmark)

Harthøj, Anders; Alimadadi, Hossein; Holt, Tobias

2015-01-01

in phase transformation of the steel and in formation of oxides with a poor electrical conductivity in the anode. In this study, the area specific resistance (ASR) of the steel Crofer 22 APU, in contact with a Ni/YSZ anode with and without a tape casted CeO2 barrier layer was measured in simulated SOFC...... anode conditions at 800◦C. The microstructure in the contact area was characterized using scanning electron microscopy techniques. The ASR was low for the steel in direct contact with the Ni/YSZ anode. Nickel diffusion into the steel resulted in a fine grained zone, which was identified as ferrite...

Evaluation of the corrosion resistance of anodized aluminum 6061 using electrochemical impedance spectroscopy (EIS)

Energy Technology Data Exchange (ETDEWEB)

Huang Yuelong [Corrosion and Environmental Effects Laboratory (CEEL), Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089-0241 (United States); Shih Hong [Lam Research Corporation, 4400 Cushing Parkway, Fremont, CA 94538 (United States)], E-mail: hong.shih@lamrc.com; Huang, Huochuan; Daugherty, John; Wu Shun; Ramanathan, Sivakami; Chang, Chris [Lam Research Corporation, 4400 Cushing Parkway, Fremont, CA 94538 (United States); Mansfeld, Florian [Corrosion and Environmental Effects Laboratory (CEEL), Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089-0241 (United States)], E-mail: mansfeld@usc.edu

2008-12-15

The corrosion resistance of anodized Al 6061 produced by two different anodizing and sealing processes was evaluated using electrochemical impedance spectroscopy (EIS). The scanning electron microscope (SEM) was employed to determine the surface structure and the thickness of the anodized layers. The EIS data revealed that there was very little change of the properties of the anodized layers for samples that were hard anodized in a mixed acid solution and sealed in hot water over a 365 day exposure period in a 3.5 wt% NaCl solution. The specific admittance A{sub s} and the breakpoint frequency f{sub b} remained constant with exposure time confirming that the hard anodizing process used in this study was very effective in providing excellent corrosion resistance of anodized Al 6061 over extended exposure periods. Some minor degradation of the protective properties of the anodized layers was observed for samples that were hard anodized in H{sub 2}SO{sub 4} and exposed to the NaCl solution for 14 days.

Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells

Science.gov (United States)

Irwin, Michael D.; Buchholz, D. Bruce; Hains, Alexander W.; Chang, Robert P. H.; Marks, Tobin J.

2008-01-01

To minimize interfacial power losses, thin (5–80 nm) layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) + [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/LiF/Al solar cells. The interfacial NiO layer is deposited by pulsed laser deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 5.2% and enhances the fill factor to 69% and the open-circuit voltage (Voc) to 638 mV versus an ITO/P3HT:PCBM/LiF/Al control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

The role of Ag buffer layer in Fe islands growth on Ge (111) surfaces

Energy Technology Data Exchange (ETDEWEB)

Fu, Tsu-Yi, E-mail: phtifu@phy.ntnu.edu.tw; Wu, Jia-Yuan; Jhou, Ming-Kuan; Hsu, Hung-Chan [Department of Physics, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Rd, Taipei 116, Taiwan (China)

2015-05-07

Sub-monolayer iron atoms were deposited at room temperature on Ge (111)-c(2 × 8) substrates with and without Ag buffer layers. The behavior of Fe islands growth was investigated by using scanning tunneling microscope (STM) after different annealing temperatures. STM images show that iron atoms will cause defects and holes on substrates at room temperature. As the annealing temperature rises, iron atoms pull out germanium to form various kinds of alloyed islands. However, the silver layer can protect the Ag/Ge(111)-(√3×√3) reconstruction from forming defects. The phase diagram shows that ring, dot, and triangular defects were only found on Ge (111)-c(2 × 8) substrates. The kinds of islands found in Fe/Ge system are similar to Fe/Ag/Ge system. It indicates that Ge atoms were pulled out to form islands at high annealing temperatures whether there was a Ag layer or not. But a few differences in big pyramidal or strip islands show that the silver layer affects the development of islands by changing the surface symmetry and diffusion coefficient. The structure characters of various islands are also discussed.

Layered double hydroxides for preparing CoMn{sub 2}O{sub 4} nanoparticles as anodes of lithium ion batteries

Energy Technology Data Exchange (ETDEWEB)

Pan, Xu; Ma, Jingjing; Yuan, Ruo, E-mail: yuanruo@swu.edu.cn; Yang, Xia, E-mail: xiayang2@swu.edu.cn

2017-06-15

In the field of lithium-ion batteries, CoMn{sub 2}O{sub 4} as an anode material has attracted a wide attention because it inherited the splendid electrochemical performances of Mn and Co-based metal oxides. Compared to graphite, Co-based oxides have a higher capacity which is about twice of the graphite. Moreover, Mn-based oxides have lower operating voltages and manganese exists abundantly in nature. Layered double hydroxides (LDHs), similar with brucite structure, were used as precursor for CoMn{sub 2}O{sub 4} nanoparticles in this work. Under high temperature process, the LDHs decomposed to CoMn{sub 2}O{sub 4} nanoparticles. When evaluated as anode materials for lithium ion batteries, the CoMn{sub 2}O{sub 4} nanoparticles behaved good electrochemical performance with the discharge and charge capacity of 733 mAh g{sup -1} and 721 mAh g{sup -1} at current density of 200 mA g{sup -1} after 100 cycles. This method for preparing CoMn{sub 2}O{sub 4} nanoparticles is easy, which may provide a way for synthesis of other bimetallic oxides and anodes of lithium ion batteries. - Highlights: • Layered double hydroxides were employed as precursors to synthesize CoMn{sub 2}O{sub 4}. • The CoMn{sub 2}O{sub 4} nanoparticles behaved good electrochemical performance. • This study provides a guideline for preparing bimetallic oxides.

Charge-collection efficiency of GaAs field effect transistors fabricated with a low temperature grown buffer layer: dependence on charge deposition profile

International Nuclear Information System (INIS)

McMorrow, D.; Knudson, A.R.; Melinger, J.S.; Buchner, S.

1999-01-01

The results presented here reveal a surprising dependence of the charge-collection efficiency of LT GaAs FETs (field effect transistors) on the depth profile of the deposited charge. Investigation of the temporal dependence of the signal amplitude, carrier density contours, and potential contours reveals different mechanisms for charge collection arising from carriers deposited above and below the LT GaAs buffer layer, respectively. In particular, carriers deposited below the LT GaAs buffer layer dissipate slowly and give rise to a persistent charge collection that is associated with a bipolar-like gain process. These results may be of significance in understanding the occurrence of single-event upsets from protons, neutrons, and large-angle, glancing heavy-ion strikes. (authors)

Buffer-layer enhanced crystal growth of BaB6 (1 0 0) thin films on MgO (1 0 0) substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Kato, Yushi; Yamauchi, Ryosuke; Arai, Hideki; Tan, Geng; Tsuchimine, Nobuo; Kobayashi, Susumu; Saeki, Kazuhiko; Takezawa, Nobutaka; Mitsuhashi, Masahiko; Kaneko, Satoru; Yoshimoto, Mamoru

2012-01-01

Crystalline BaB 6 (1 0 0) thin films can be fabricated on MgO (1 0 0) substrates by inserting a 2-3 nm-thick epitaxial SrB 6 (1 0 0) buffer layer by pulsed laser deposition (PLD) in ultra-high vacuum (i.e., laser molecular beam epitaxy). Reflection high-energy electron diffraction and X-ray diffraction measurements indicated the heteroepitaxial structure of BaB 6 (1 0 0)/SrB 6 (1 0 0)/MgO (1 0 0) with the single domain of the epitaxial relationship. Conversely, BaB 6 thin films without the buffer layer were not epitaxial instead they developed as polycrystalline films with a random in-plane configuration and some impurity phases. As a result, the buffer layer is considered to greatly affect the initial growth of epitaxial BaB 6 thin films; therefore, in this study, buffering effects have been discussed. From the conventional four-probe measurement, it was observed that BaB 6 epitaxial thin films exhibit n-type semiconducting behavior with a resistivity of 2.90 × 10 -1 Ω cm at room temperature.

Physical-mechanical and electrical properties of aluminium anodic films

Energy Technology Data Exchange (ETDEWEB)

Dima, L. [Research and Design Inst. for Electr. Eng., Bucharest (Romania); Anicai, L. [Research and Design Inst. for Electr. Eng., Bucharest (Romania)

1995-11-01

Mechanical, thermal and electrical properties of aluminium anodic films obtained by continuously anodization of Al wires of 4.5 mm diameter and Al sheets of 40 x 0.2 mm (Al min.99.5% purity), using an electrolyte based on oxalic acid, citric acid, boric acid, isopropilic alcohol, were investigated. The thickness of Al anodic oxide layers was 5 {+-} 1{mu}, 10 {+-} 1{mu}, for Al sheet, respectively 5 {+-} 1{mu}, 10 {+-} 1{mu}, 15 {+-} 1{mu}, for Al wire. To establish the influence of anodic film formation on mechanical parameters, measurements of breaking strength and relative elongation at break for anodized and non-anodized Al conductors, were made. In order to electrically characterize the anodic films, the breakdown voltage for different curvature radii of the conductor, between 50 - 12.5 mm, were measured. The influence of the layer thickness, as well as of the cracking during its bending, was established, too. To test the thermal resistance of the insulating anodic films, the Al conductors were subjected to 1 - 5 cyclic thermal shocks at 500 C. After the experimentals were done, it was found that Al anodic films of 5 {+-} 1{mu} may assure a breakdown voltage of minimum 200 V, for coils having a curvature radius greater than 12.5 mm and operating temperatures up to 500 C. From mechanical point of view, anodic oxide film determines a relatively reinforcing of Al conductor, but it doesn`t influence its functional properties. (orig.)

Effect of a thermally evaporated bis (2-methyl-8-quninolinato)-4-phenylphenolate cathode buffer layer on the performance of polymer photovoltaic cells

International Nuclear Information System (INIS)

Kim, Dal-Ho; Park, Jea-Gun

2012-01-01

We investigated the device characteristics of polymer photovoltaic (PV) cells based on a poly(3 hexylthiophene) (P3HT) and [6,6]-phenylC61 butyric acid methyl ester (PCBM) bulk heterojunction with a cathode buffer layer of thermally evaporated bis (2-methyl-8-quninolinato)-4-phenylphenolate (BAlq). A power conversion efficiency (PCE) of 2.46% was obtained with the insertion of a 4-nm-thick BAlq, which was ∼118% increase over that for the cell without a BAlq layer, under Air Mass 1.5 Global (AM 1.5 G) illumination, 100 mW/cm 2 . Moreover, we examined the charge carrier transport property, and found that the hole mobility of the cell was enhancement due to the insertion of a BAlq layer with a thickness of less than 4 nm, which accounted for the improved in the photocurrent and fill factor (FF) due to the better balance of charge carriers. Finally, the BAlq buffer layer was also demonstrated as an optical spacer that improved the optical absorption of the P3HT:PCBM layer, which accounted for the J sc enhancement of the device.

Preparation of SmBiO{sub 3} buffer layer on YSZ substrate by an improved chemical solution deposition route

Energy Technology Data Exchange (ETDEWEB)

Zhu, Xiaolei [Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China), Superconductivity and New Energy R& D Center, Mail Stop 165#, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Pu, Minghua, E-mail: mhpu@home.swjtu.edu.cn [Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China), Superconductivity and New Energy R& D Center, Mail Stop 165#, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Yong [Key Laboratory of Advanced Technologies of Materials (Ministry of Education of China), Superconductivity and New Energy R& D Center, Mail Stop 165#, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wale, Sydney, NSW 2052 (Australia)

2016-12-15

Highlights: • The proper conditions for SBO growth are 794 °C for 60 min in flowing Ar gas, the temperature of epitaxial growth is relatively low. • The total time by SSD technique for organic solvent removing, salts decomposition and layer growth is not up to 2 h, which are much less than that needed for traditional CSD of over 10 h. • SBO layer on YSZ prepared by SSD technique are suitable for the growth of YBCO, The results may be the usable reference for continuous preparation of SBO buffer layer on IBAD-YSZ/Ni-based alloy tapes. - Abstract: A quick route for chemical solution deposition (CSD) has been developed to prepare SmBiO{sub 3} (SBO) layers on yttria stabilized zirconia (YSZ) substrates rapidly by using of solid state decomposition (SSD) technique. The proper conditions for volatilization of lactic acid, which as solvent in precursor coated layer, and SBO growth are 115°C for 30 min and 794°C for 60 min in flowing Ar gas. The coated layers are amorphous structure of mixture oxides and quasi-crystal structure of SBO before and after growth, respectively. The total time by this quick CSD route for organic solvent volatilization, salts decomposed and layer growth is not up to 2 h, which are much less than that needed for traditional CSD of over 10 h. SBO layer is directly epitaxial growth on YSZ substrate without any lattice rotation. SBO layer prepared by this quick route as well as that by traditional route are suitable for the growth of YBCO. The superconducting transition temperature and critical current density of the coated YBCO layer on SBO/YSZ obtained by this quick route are up to 90 K and 1.66 MA/cm{sup 2}. These results may be the usable reference for continuous preparation of SBO buffer layer on IBAD-YSZ/Ni-based alloy tapes.

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

Science.gov (United States)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

Interdiffusion studies on high-Tc superconducting YBa2Cu3O7-δ thin films on Si(111) with a NiSi2/ZrO2 buffer layer

DEFF Research Database (Denmark)

Aarnink, W.A.M.; Blank, D.H.A.; Adelerhof, D.J.

1991-01-01

Interdiffusion studies on high-T(c) superconducting YBa2Cu3O7-delta thin films with thickness in the range of 2000-3000 angstrom, on a Si(111) substrate with a buffer layer have been performed. The buffer layer consists of a 400 angstrom thick epitaxial NiSi2 layer covered with 1200 angstrom...... of polycrystalline ZrO2. YBa2Cu3O7-delta films were prepared using laser ablation. The YBa2Cu3O7-delta films on the Si/NiSi2/ZrO2 substrates are of good quality; their critical temperatures T(c,zero) and T(c,onset) have typical values of 85 and 89 K, respectively. The critical current density j(c) at 77 K equaled 4...... x 10(4) A/cm2. With X-ray analysis (XRD), only c-axis orientation has been observed. The interdiffusion studies, using Rutherford backscattering spectrometry (RBS) and scanning Auger microscopy (SAM) show that the ZrO2 buffer layer prevents severe Si diffusion to the YBa2Cu3O7-delta layer, the Si...

Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

DEFF Research Database (Denmark)

Canulescu, Stela; Rechendorff, K.; Borca, C. N.

2014-01-01

The band structure of pure and Ti-alloyed anodic aluminum oxide has been examined as a function of Ti concentration varying from 2 to 20 at. %. The band gap energy of Ti-alloyed anodic Al oxide decreases with increasing Ti concentration. X-ray absorption spectroscopy reveals that Ti atoms...... are not located in a TiO2 unit in the oxide layer, but rather in a mixed Ti-Al oxide layer. The optical band gap energy of the anodic oxide layers was determined by vacuum ultraviolet spectroscopy in the energy range from 4.1 to 9.2 eV (300–135 nm). The results indicate that amorphous anodic Al2O3 has a direct...

Optical characterization of In{sub 2}S{sub 3} solar cell buffer layers grown by chemical bath and physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Trigo, J.F.; Asenjo, B.; Herrero, J.; Gutierrez, M.T. [Department of Energy, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain)

2008-09-15

In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In{sub 2}S{sub 3} buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In{sub 2}S{sub 3} thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell. (author)

Effects of V2O3 buffer layers on sputtered VO2 smart windows: Improved thermochromic properties, tunable width of hysteresis loops and enhanced durability

Science.gov (United States)

Long, Shiwei; Cao, Xun; Sun, Guangyao; Li, Ning; Chang, Tianci; Shao, Zewei; Jin, Ping

2018-05-01

Vanadium dioxide (VO2) is one of the most well-known thermochromic materials, which exhibits a notable optical change from transparent to reflecting in the infrared region upon a metal-insulator phase transition. For practical applications, VO2 thin films should be in high crystalline quality to obtain a strong solar modulation ability (ΔTsol). Meanwhile, narrow hysteresis loops and robust ambient durability are also indispensable for sensitivity and long-lived utilization, respectively. In this work, a series of high-quality V2O3/VO2 bilayer structures were grown on quartz glass substrates by reactive magnetron sputtering. Basically, the bottom V2O3 acts as the buffer layer to improve the crystallinity of the top VO2, while the VO2 serves as the thermochromic layer to guarantee the solar modulation ability for energy-saving. We observed an obvious increase in ΔTsol of 76% (from 7.5% to 13.2%) for VO2 films after introducing V2O3 buffer layers. Simultaneously, a remarkable reduction by 79% (from 21.9 °C to 4.7 °C) in width of hysteresis loop was obtained when embedding 60 nm V2O3 buffer for 60 nm VO2. In addition, VO2 with non-stoichiometry of V2O3±x buffer demonstrates a broadening hysteresis loops width, which is derived from the lattice distortion caused by lattice imperfection. Finally, durability of VO2 has been significantly improved due to positive effects of V2O3 buffer layer. Our results lead to a comprehensive enhancement in crystallinity of VO2 and shed new light on the promotion of thermochromic property by homologous oxides for VO2.

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Science.gov (United States)

Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

2014-12-01

High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

The mechanism of the nano-CeO2 films deposition by electrochemistry method as coated conductor buffer layers

International Nuclear Information System (INIS)

Lu, Yuming; Cai, Shuang; Liang, Ying; Bai, Chuanyi; Liu, Zhiyong; Guo, Yanqun; Cai, Chuanbing

2015-01-01

Highlights: • Crack-free CeO 2 film thicker than 200 nm was prepared on NiW substrate by ED method. • Different electrochemical processes as hydroxide/metal mechanisms were identified. • The CeO 2 precursor films deposited by ED method were in nano-scales. - Abstract: Comparing with conventional physical vapor deposition methods, electrochemistry deposition technique shows a crack suppression effect by which the thickness of CeO 2 films on Ni–5 at.%W substrate can reach a high value up to 200 nm without any cracks, make it a potential single buffer layer for coated conductor. In the present work, the processes of CeO 2 film deposited by electrochemistry method are detailed investigated. A hydroxide reactive mechanism and an oxide reactive mechanism are distinguished for dimethyl sulfoxide and aqueous solution, respectively. Before heat treatment to achieve the required bi-axial texture performance of buffer layers, the precursor CeO 2 films are identified in nanometer scales. The crack suppression for electrochemistry deposited CeO 2 films is believed to be attributed to the nano-effects of the precursors

Modeling of the anode side of a direct methanol fuel cell with analytical solutions

International Nuclear Information System (INIS)

Mosquera, Martin A.; Lizcano-Valbuena, William H.

2009-01-01

In this work, analytical solutions were derived (for any methanol oxidation reaction order) for the profiles of methanol concentration and proton current density, by assuming diffusion mass transport mechanism, Tafel kinetics, and fast proton transport in the anodic catalyst layer of a direct methanol fuel cell. An expression for the Thiele modulus that allows to express the anodic overpotential as a function of the cell current and kinetic and mass transfer parameters was obtained. For high cell current densities, it was found that the Thiele modulus (φ 2 ) varies quadratically with cell current density; yielding a simple correlation between anodic overpotential and cell current density. Analytical solutions were derived for the profiles of both local methanol concentration in the catalyst layer and local anodic current density in the catalyst layer. Under the assumptions of the model presented here, in general, the local methanol concentration in the catalyst layer cannot be expressed as an explicit function of the position in the layer. In spite of this, the equations presented here for the anodic overpotential allow the derivation of new semi-empirical equations

DIFFERENTIAL PULSE ANODIC STRIPPING VOLTAMMETRY FOR DETERMINATION OF SOME HEAVY METALS IN URANIUM

Directory of Open Access Journals (Sweden)

Saryati Saryati

2010-06-01

Full Text Available The direct determination of some metals impurity in uranium by using differential pulse anodic stripping voltammetry (DPASV method at a hanging mercury drop electrode and in a carbonate buffer media was developed. It was found that the carbonate buffer show the strongest affinity for uranium and gives the best separation between the DPASV peaks of heavy metals impurities. The carbonate concentration markedly affects the oxidation and reduction the major and the minor constituents of the uranium samples. In 0.1 M carbonate buffer solution pH 10, copper, bismuth, thalium, lead, cadmium, zinc, could be determined without the removal of the uranium matrix. Recovery and relative standard deviation (RSD of this method was in the range of 174% - 85.2% for recovery and 36.8% - 1.2% for RSD. The larger error of analytical result was obtained for Zn at low concentration. In general, the analytic results error and RSD decreased with increasing metals concentration.   Keywords: heavy metal determination, differential pulse anodic stripping voltammetry, uranium

Engineering of the energetic structure of the anode of organic photovoltaic devices utilizing hot-wire deposited transition metal oxide layers

Energy Technology Data Exchange (ETDEWEB)

Vasilopoulou, M., E-mail: mariva@imel.demokritos.gr [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Stathopoulos, N.A.; Savaidis, S.A. [Department of Electronics, Technological and Educational Institute (TEI) of Piraeus, Petrou Ralli & Thivon, 12244 Aegaleo (Greece); Kostis, I. [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Department of Electronics, Technological and Educational Institute (TEI) of Piraeus, Petrou Ralli & Thivon, 12244 Aegaleo (Greece); Papadimitropoulos, G. [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece); Davazoglou, D., E-mail: d.davazoglou@imel.demokritos.gr [Institute of Nanoscience and Nanotechnology, Department of Microelectronics, National Center for Scientific Research Demokritos, POB 60228, 15310 Agia Paraskevi, Attiki (Greece)

2015-09-30

Graphical abstract: In this work we perform successful engineering of the anode of organic photovoltaics based on poly(3-hexylthiophene):[6,6]-phenyl butyric acid methyl ester blends by using metal oxide transport layers exhibiting shallow gap states which act as a barrier-free path for hole transport toward the anode. - Highlights: • Interface engineering of the anode. • Organic photovoltaics (OPVs). • Shallow gap states. • Barrier-free hole transport. • Design rules for interface engineering in OPVs. - Abstract: In this work we use hydrogen deposited molybdenum and tungsten oxides (chemically described as H:MO{sub x}x ≤ 3 where M = Mo or W) to control the energetics at the anode of bulk heterojunction (BHJ) organic photovoltaics (OPVs) based on poly(3-hexylthiophene):[6,6]-phenyl butyric acid methyl ester (P3HT:PC{sub 71}BM) blends. Significantly improved current densities and open circuit voltages were achieved as a result of improved hole transport from the P3HT highest occupied molecular orbital (HOMO) toward indium tin oxide (ITO) anode. This was attributed to the formation of shallow gap states in these oxides which are located just below the Fermi level and above the polymer HOMO and thus may act as a barrier-free path for the extraction of holes. Consequently, these states can be used for controlling the energetic structure of the anode of OPVs. By using ultraviolet photoelectron spectroscopy it was found that dependent on the deposition conditions these gap states and work function of the metal oxides may be tailored to contribute to the precise alignment of the HOMO of the organic semiconductor (OSC) with the Fermi level of the anode electrode resulting in further enhancement of the device performance.

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Science.gov (United States)

Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

2018-06-08

Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multi-layer coatings for bipolar rechargeable batteries with enhanced terminal voltage

Science.gov (United States)

Farmer, Joseph C.; Kaschmitter, James; Pierce, Steve

2017-06-06

A method for producing a multi-layer bipolar coated cell according to one embodiment includes applying a first active cathode material above a substrate to form a first cathode; applying a first solid-phase ionically-conductive electrolyte material above the first cathode to form a first electrode separation layer; applying a first active anode material above the first electrode separation layer to form a first anode; applying an electrically conductive barrier layer above the first anode; applying a second active cathode material above the anode material to form a second cathode; applying a second solid-phase ionically-conductive electrolyte material above the second cathode to form a second electrode separation layer; applying a second active anode material above the second electrode separation layer to form a second anode; and applying a metal material above the second anode to form a metal coating section. In another embodiment, the anode is formed prior to the cathode. Cells are also disclosed.

Effect of aluminum anodizing in phosphoric acid electrolyte on adhesion strength and thermal performance

Science.gov (United States)

Lee, Sulki; Kim, Donghyun; Kim, Yonghwan; Jung, Uoochang; Chung, Wonsub

2016-01-01

This study examined the adhesive bond strength and thermal performance of the anodized aluminum 6061 in phosphoric acid electrolyte to improve the adhesive bond strength and thermal performance for use in metal core printed circuit boards (MCPCB). The electrolyte temperature and applied voltage were altered to generate varied pore structures. The thickness, porosity and pore diameter of the anodized layer were measured. The pore morphologies were affected most by temperature, which was the driving force for ion transportation. The mechanism of adhesive bond was penetration of the epoxy into the pores. The optimal anodization conditions for maximum adhesive bond strength, 27 MPa, were 293 K and 100V. The maximum thermal conductivity of the epoxy-treated anodized layer was 1.6 W/m·K at 273 K. Compared with the epoxy-treated Al layer used for conventional MCPCBs, the epoxy-treated anodized layer showed advanced thermal performance due to a low difference of thermal resistance and high heat dissipation.

Study of High Quality Indium Nitride Films Grown on Si(100 Substrate by RF-MOMBE with GZO and AlN Buffer Layers

Directory of Open Access Journals (Sweden)

Wei-Chun Chen

2012-01-01

Full Text Available Wurtzite structure InN films were prepared on Si(100 substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE system. Ga-doped ZnO (GZO and Amorphous AlN (a-AlN film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, and photoluminescence (PL. XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

International Nuclear Information System (INIS)

Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

2007-01-01

Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

Forming lead-based anodes

Energy Technology Data Exchange (ETDEWEB)

Ogorodnichuk, V I; Voitsekhovich, R I

1972-01-01

Lead-based anodes can be produced by forming a layer of lead dioxide by chemical treatment in a solution of sulfuric acid in potassium permanganate at 80 to 100/sup 0/. The solution is mixed by compressed air. (RWR)

Environmental Modeling, The Buffer Priority layers for Nitrogen Removal identify priority forest/grass buffer sites by subwatershed. Land use, hydrology, soil, and landscape characteristics were analyzed to rank opportunities with high nitrogen removal potential., Published in 2014, Smaller than 1:100000 scale, Maryland Department of Natural Resources (DNR).

Data.gov (United States)

NSGIC Education | GIS Inventory — Environmental Modeling dataset current as of 2014. The Buffer Priority layers for Nitrogen Removal identify priority forest/grass buffer sites by subwatershed. Land...